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Sample records for cdte p-i-n detectors

  1. Improved spectrometric performance of CdTe radiation detectors in a p-i -n design

    OpenAIRE

    Niraula, Madan; Mochizuki, Daisuke; Aoki, Toru; Hatanaka, Yoshinori; Tomita, Yasuhiro; Nihashi, Tokuaki; ニラウラ, マダン

    1999-01-01

    CdTe radiation detectors were fabricated using a p-i-n design and a significant improvement in the spectral properties was obtained during room temperature operation. An iodine doped n-CdTe layer was grown on the Te faces of the (111) oriented high resistivity CdTe crystals at the low substrate temperature of 150°C. An aluminum electrode was evaporated on the n-CdTe side for the n-type contact, while a gold electrode on the opposite side acted as the p-type contact. Very low leakage currents,...

  2. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  3. High performance p-i-n CdTe and CdZnTe detectors

    Science.gov (United States)

    Khusainov, A. Kh; Dudin, A. L.; Ilves, A. G.; Morozov, V. F.; Pustovoit, A. K.; Arlt, R. D.

    1999-06-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  4. P-I-N CdTe gamma-ray detectors by liquid phase epitaxy (LPE)

    International Nuclear Information System (INIS)

    A new device concept of CdTe gamma ray detectors has been demonstrated by using p+(HgCdTe)-n(CdTe)-n+(HgCdTe) diode structures. Both p+ and n+-type Hg/sub 0.25/Cd/sub 0.75/Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE-grown P-I-N structure offers potential advantages for p-n junction formation and ohmic contact over standard ion-implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm2 were fabricated. Resolutions of 10 keV were obtained for the 122 keV gamma peak of Co57 at room temperature

  5. Fabrication and performance of p-i-n CdTe radiation detectors

    International Nuclear Information System (INIS)

    We report on the fabrication and performance of CdTe radiation detectors in a new p-i-n structure which helps to reduce the leakage current to a minimum level. Chlorine-doped single-crystal CdTe substrates having resistivity in the order of 109 Ω cm were used in this study. Iodine-doped n-type CdTe layers were grown homoepitaxially on one face of each crystals using the hydrogen plasma-radical-assisted metalorganic chemical vapor deposition technique at low substrate temperature of 150 deg. C. Indium electrode was evaporated on the n-CdTe side while a gold electrode on the opposite side acted as a p-type contact. Detectors thus fabricated exhibited low leakage current (below 0.4 nA/mm2 at 250 V applied reverse bias for the best one) and good performance at room temperature. Spectral response of the detectors showed improved energy resolution for Am-241, Co-57, and Cs-137 radioisotopes. Detectors were further tested with X-ray photons of different intensities for their potential application in imaging systems and promising responses were obtained

  6. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  7. p-i-n CdTe multi-pixel detector for gamma-ray imaging fabricated by excimer laser processing

    International Nuclear Information System (INIS)

    A multi-pixel gamma-ray imaging detector unit, which has a high-energy resolution with room temperature operation, was fabricated using the diode-type CdTe detector. The diode structure was prepared by indium-doped n-type CdTe thin layer formed by excimer laser doping on one-side of high resistivity p-like single crystal CdTe wafer, and a gold electrode as a Shottkey electrode evaporated on the opposite side of the wafer. This diode-detectors showed good diode I-V characteristics with low leakage current. This CdTe detectors were pixelized in the 2mm x 2mm, and the 128 chips (32x4 chips) were mounted on the ceramic printed circuit boards at 3 mm interval with 1 mm gap. The printed circuit boards are directly connected the MCSA-EXI ASIC chip and 128 ch radiation spectrum analyzer systems. When using the Am-241 and the Co-57 as radioisotopes, the spectral response from all the pixels within 4,4 ke V of FWHM at 122 ke V peak of Co-57 for radiation performed at room temperature. The intensities of the peak from pixels were also uniform (Authors)

  8. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  9. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    International Nuclear Information System (INIS)

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

  10. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  11. High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

    Science.gov (United States)

    Larsson, A.; Andrekson, P. A.; Andersson, P.; Eng, S. T.; Salzman, J.

    1986-01-01

    High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.

  12. High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

    OpenAIRE

    Larsson, A; Andrekson, P. A.; P. Andersson; Eng, S. T.; Salzman, J; Yariv, A.

    1986-01-01

    We demonstrate high-speed (1 Gbit/s) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.

  13. Effect of 60Co γ ray irradiation on electrical parameters of MOVPE grown GaAs epilayer and p-i-n detectors

    International Nuclear Information System (INIS)

    60Co γ ray irradiation on GaAs epilayer and p-i-n detectors structures was carried out to determine the radiation hardness of the devices. The carrier density and mobility decreases with increasing radiation doses due to the creation of Ga vacancies. The generation recombination centers increases with increasing radiation doses that leads to five fold increase in the dark current of the p-i-n device at 50 KGy. The radiation hardness value obtained was 4.7x10-19 A/cm. (author)

  14. A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    International Nuclear Information System (INIS)

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of AlxGa1-xAs. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10-12 amps at -1 V on a 3mm x 3mm diode, or a density of 1.1 x 10-11 amps cm-2, with many of the diode structures tested having nearly similar results. The PIN diodes were significantly better than the Schottky barrier device, which had six orders of magnitude higher dark current. Diodes were characterized in terms of their current-mode response to 5.5 MeV alpha particles FR-om 241-Americium. These radiation-induced currents were as high as 9.78 x 10-7 A cm-1 on a PIN device with an AlxGa1-xAs BSF. Simple PIN diodes had currents as high as 2.44 x 10-7 A cm-2, with thicker undoped layers showing better sensitivity. Boron coatings were applied, and response to neutrons tested at University of Michigan by Dr. Doug McGregor. Devices with PIN and Schottky barrier designs showed neutron detection efficiencies as high as 2% on 5 (micro)m thick devices, with no need for external bias voltages. PIN diodes showed higher breakdown voltages and lower noise characteristics than did the Schottky barrier design. Uniformity of

  15. A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson’s equation.Using the numerical calculation method,a novel model of photo-carrier screening effect is presented.Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed.The influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also analyzed.It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage.Besides,the incident light duration has strong impact on the photo-carrier screening effect.

  16. Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

    Science.gov (United States)

    Reine, M. B.; Hairston, A.; Lamarre, P.; Wong, K. K.; Tobin, S. P.; Sood, A. K.; Cooke, C.; Pophristic, M.; Guo, S.; Peres, B.; Singh, R.; Eddy, C. R., Jr.; Chowdhury, U.; Wong, M. M.; Dupuis, R. D.; Li, T.; DenBaars, S. P.

    2006-02-01

    This paper reports the development of aluminum-gallium nitride (AlGaN or Al xGa 1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in backilluminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10 16 ohm, corresponding to R 0A products of 7×10 10 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

  17. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays

    Science.gov (United States)

    Reine, M. B.; Hairston, A.; Lamarre, P.; Wong, K. K.; Tobin, S. P.; Sood, A. K.; Cooke, C.; Pophristic, M.; Guo, S.; Peres, B.; Singh, R.; Eddy, C. R. _Jr., Jr.; Chowdhury, U.; Wong, M. M.; Dupuis, R. D.; Li, T.; DenBaars, S. P.

    2006-02-01

    This paper reports the development of aluminum-gallium nitride (AlGaN or Al xGa 1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in back-illuminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10 16 ohm, corresponding to R0A products of 7×10 10 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

  18. High efficiency pixellated CdTe detector

    International Nuclear Information System (INIS)

    Position sensitive detectors constructed from compound semiconductors (CdTe, CdZnTe, HgI2) are being developed for a variety of applications where high sensitivity and improved energy resolution are significant advantages over scintillator or gas based systems. We have investigated the possibility of using a CdTe detector array in a SPECT gamma camera that would require a high efficiency at 140 keV. The problem of worsening photopeak efficiencies in thick detectors (due to incomplete charge collection) makes it difficult to maintain a high efficiency which, ironically, is the primary reason for choosing a thicker detector. Recent research has shown that following a simple geometrical design criterion can greatly reduce this deleterious effect. This paper reports on the results from a small prototype pixellated array fabricated using this design. We verify the 'small pixel effect' for a detector thickness and pixel size significantly larger than those used in most other work. A 9-element detector (1 x 1 mm pixels, 4 mm thick) has been fabricated and characterized in terms of energy resolution, peak-to-valley ratio and detection efficiency. Testing of the detector in a fast pulse mode to obtain its high count rate response has also been performed. (orig.)

  19. Development of CdTe radiation detectors and their applications

    International Nuclear Information System (INIS)

    We have been developing radiation detectors using cadmium telluride (CdTe), which has the high radiation absorption characteristic. The image pickup tube using polycrystalline CdTe thin film has been developed at the first stage. Furthermore, the X-ray imaging line sensor with high scanning speed and the radiation spectrometer with thermo-electric Peltier cooler were developed by using CdTe single crystal, which has high electric charge collection characteristics. At present, the energy discriminating photon counting radiation line sensors are developing. In this presentation, the feature of the detector using CdTe and their applications are described examples of development until now. (author)

  20. Counting efficiency of a CdTe detector

    International Nuclear Information System (INIS)

    The purpose of this work is to obtain some data about the energy dependence of the sensitivity of a CdTe detector in order to use it for a miniature dose rate meter. The intrinsic efficiencies of the CdTe detector were measured for several photon energies between 22 and 835 keV. The results showed the great dependence of the efficiency of the CdTe detector on photon energy, for example, the intrinsic efficiencies for the photons of 122 keV and 835 keV were 71% and 8.7% respectively. Some further problems were also presented and discussed. (author)

  1. Radiation induced polarization in CdTe detectors

    Science.gov (United States)

    Vartsky, D.; Goldberg, M.; Eisen, Y.; Shamai, Y.; Dukhan, R.; Siffert, P.; Koebel, J. M.; Regal, R.; Gerber, J.

    1988-01-01

    Polarization induced by irradiation with intense gamma ray sources has been studied in chlorine-compensated CdTe detectors. The influence of several parameters, such as applied field strength, temperature and incident photon flux, on the polarization effect have been investigated. A relationship was found between the degree of polarization, detector efficiency and detector leakage current.

  2. Radiation induced polarization in CdTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vartsky, D.; Goldberg, M.; Eisen, Y.; Shamai, Y.; Dukhan, R.; Siffert, P.; Koebel, J.M.; Regal, R.; Gerber, J.

    1988-01-15

    Polarization induced by irradiation with intense gamma ray sources has been studied in chlorine-compensated CdTe detectors. The influence of several parameters, such as applied field strength, temperature and incident photon flux, on the polarization effect have been investigated. A relationship was found between the degree of polarization, detector efficiency and detector leakage current.

  3. Digital pulse-shape processing for CdTe detectors

    International Nuclear Information System (INIS)

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency

  4. Digital pulse-shape processing for CdTe detectors

    CERN Document Server

    Bargholtz, C; Maartensson, L; Wachtmeister, S

    2001-01-01

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  5. Digital pulse-shape processing for CdTe detectors

    Science.gov (United States)

    Bargholtz, Chr.; Fumero, E.; Mårtensson, L.; Wachtmeister, S.

    2001-09-01

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  6. Digital pulse-shape processing for CdTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bargholtz, Chr.; Fumero, E.; Maartensson, L. E-mail: martensson@physto.se; Wachtmeister, S

    2001-09-21

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  7. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    Science.gov (United States)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  8. COBRA - Double beta decay searches using CdTe detectors

    OpenAIRE

    Zuber, K.

    2001-01-01

    A new approach (called COBRA) for investigating double beta decay using CdTe (CdZnTe) semiconductor detectors is proposed. It follows the idea that source and detector are identical. This will allow simultaneous measurements of 5 $\\beta^-\\beta^-$ - and 4 $\\beta^+\\beta^+$ - emitters at once. Half-life limits for neutrinoless double beta decay of Cd-116 and Te-130 can be improved by more than one order of magnitude with respect to current limits and sensitivities on the effective Majorana neutr...

  9. Development of a CdTe thermal neutron detector for neutron imaging

    International Nuclear Information System (INIS)

    A thin CdTe thermal neutron detector has been developed and its suitability for neutron imaging has been investigated. Simulations of the interaction of neutrons with a 0.5 mm-thick CdTe detector demonstrate the advantages of using 96 keV prompt gamma rays produced by neutron capture in 113Cd as a neutron event. Specifically, they provide a high spatial resolution and approximately the same detection efficiency as 558 keV prompt gamma rays, which are commonly used for detecting thermal neutrons in CdTe detectors. We fabricated a thin CdTe detector. Measurements using a 133Ba gamma-ray source revealed that the detector has a gamma-ray energy resolution of 3 keV at 80 keV, while measurements using a 252Cf neutron source demonstrated that the CdTe detector has good neutron/gamma ray discrimination.

  10. Miniature hybrid preamplifier for CdTe detectors

    International Nuclear Information System (INIS)

    Aeronutronic Ford has developed a rugged, miniature, room temperature operable, gamma ray detector package containing a CdTe photon detector, a charge amplifier and a pulse shaper circuit. Photon detection efficiencies between 10 percent and 40 percent are achieved for various photon energies between 100 keV and 1000 keV in a detector area of .032 square inches. The resulting package weighs approximately 8 grams and occupies approximately 0.1 cubic inch. Prototypes have been tested for aging and temperature effects on gamma detection efficiency. The intended application of the device is calibrated gamma ray counting in a warm environment while subjected to high intensity acoustic and vibration stresses as well as very large linear accelerations

  11. Wide-range plutonium isotopic analysis with CDTE detector

    Energy Technology Data Exchange (ETDEWEB)

    Vo, Duc T.; Russo, P. A. (Phyllis A.)

    2001-01-01

    Nondestructive analysis (NDA) techniques applied to bulk nuclear materials (NM) are important for nuclear safeguards and material control because of timeliness, cost-effectiveness and containment integrity. The common NDA techniques, calorimetry and neutron coincidence counting, require knowledge of the isotopic composition of the material quantitative interpretation of these measurements. Gamma-ray spectroscopy with high-resolution detectors is a well-developed NDA technique for isotopics. The use of intrinsic germanium detectors cooled to cryogenic temperatures for isotopic measurements is sometimes difficult or even impossible because of severe access limitations with the sensitive, heavy detectors. Highly portable isotopics measurements are needed for in-situ verification of bulk NM quantities or, in many cases, for measurements of holdup quantities. This paper summarizes the gamma-ray measurements with a new, portable CdTe detector. It also presents the detailed results of the wide-range isotopic analysis of plutonium with FRAM v4, the first results of this kind for a non-cryogenic detector.

  12. Gamma spectrometric characterization of various CdTe and CdZnTe detectors

    CERN Document Server

    Arlt, R; Sumah, P

    1999-01-01

    CdZnTe and CdTe detectors are now used by the Department of Safeguards of the International Atomic Energy Agency in significant numbers. To prepare, plan and support various verification methods, their properties must be well characterized and understood. In this paper we present some of the results which were obtained with large volume hemispheric CdZnTe detectors and high-resolution CdTe detectors.

  13. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-05-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from {sup 235}U and {sup 238}U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup.

  14. Characterisation of vapour phase grown CdTe and (Cd,Zn)Te for detector applications

    CERN Document Server

    Fiederle, M; Rogalla, M; Meinhardt, J; Ludwig, J; Runge, K; Benz, W

    1999-01-01

    The growth of CdTe from the vapour phase offers several improvements in crystal quality and homogeneity. CdTe and (Cd, Zn)Te were grown by the modified Markov technique. The transport properties and the detector performance are given and compared to melt grown material. (author)

  15. Position-sensitive CdTe detector using improved crystal growth method

    Science.gov (United States)

    1988-09-01

    The feasibility of developing a position-sensitive CdTe detector array for astronomical observations in the hard X-ray, soft gamma ray region is demonstrated. In principle, it was possible to improve the resolution capability for imaging measurements in this region by orders of magnitude over what is now possible through the use of CdTe detector arrays. The objective was to show that CdTe crystals of the quality, size and uniformity required for this application can be obtained with a new high pressure growth technique. The approach was to fabricate, characterize and analyze a 100 element square array and several single-element detectors using crystals from the new growth process. Results show that detectors fabricated from transversely sliced, 7 cm diameter wafers of CdTe exhibit efficient counting capability and a high degree of uniformity over their entire areas. A 100 element square array of 1 sq mm detectors was fabricated and operated.

  16. The CdTe detector module and its imaging performance

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Issei; Takayama, Takuzo; Motomura, Nobutoku [Toshiba Corp. Medical Systems Co., Otawara, Tochigi (Japan). Medical Systems R and D Center

    2001-12-01

    In recent years investigations into the application of semiconductor detector technology in gamma cameras have become active world-wide. The reason for this burst of activity is the expectation that the semiconductor-based gamma camera would outperform the conventional Anger-type gamma camera with a large scintillator and photomultipliers. Nevertheless, to date, it cannot be said that this expectation has been met. While most of the studies have used CZT (Cadmium Zinc Telluride) as the semiconductor material, we designed and fabricated an experimental detector module of CdTe (Cadmium Telluride). The module consists of 512 elements and its pixel pitch is 1.6 mm. We have evaluated its energy resolution, planar image performance, single photon emission computed tomography (SPECT) image performance and time resolution for coincidence detection. The average energy resolution was 5.5% FWHM at 140 keV. The intrinsic spatial resolution was 1.6 mm. The quality of the phantom images, both planar and SPECT, was visually superior to that of the Anger-type gamma camera. The quantitative assessment of SPECT images showed accuracy far better than that of the Anger-type camera. The coincidence time resolution was 8.6 ns. All measurement were done at room temperature, and the polarization effect that had been the biggest concern for CdTe was not significant. The results indicated that the semiconductor-based gamma camera is superior in performance to the Anger-type and has the possibility of being used as a positron emission computed tomography (PET) scanner. (author)

  17. The CdTe detector module and its imaging performance

    International Nuclear Information System (INIS)

    In recent years investigations into the application of semiconductor detector technology in gamma cameras have become active world-wide. The reason for this burst of activity is the expectation that the semiconductor-based gamma camera would outperform the conventional Anger-type gamma camera with a large scintillator and photomultipliers. Nevertheless, to date, it cannot be said that this expectation has been met. While most of the studies have used CZT (Cadmium Zinc Telluride) as the semiconductor material, we designed and fabricated an experimental detector module of CdTe (Cadmium Telluride). The module consists of 512 elements and its pixel pitch is 1.6 mm. We have evaluated its energy resolution, planar image performance, single photon emission computed tomography (SPECT) image performance and time resolution for coincidence detection. The average energy resolution was 5.5% FWHM at 140 keV. The intrinsic spatial resolution was 1.6 mm. The quality of the phantom images, both planar and SPECT, was visually superior to that of the Anger-type gamma camera. The quantitative assessment of SPECT images showed accuracy far better than that of the Anger-type camera. The coincidence time resolution was 8.6 ns. All measurement were done at room temperature, and the polarization effect that had been the biggest concern for CdTe was not significant. The results indicated that the semiconductor-based gamma camera is superior in performance to the Anger-type and has the possibility of being used as a positron emission computed tomography (PET) scanner. (author)

  18. CdTe and HgI2 crystals and detectors: present state and future

    International Nuclear Information System (INIS)

    After recalling the main properties of CdTe and HgI2 crystals from which the characteristics of these detectors will arise, the fabrication cycle is analysed at its various stages. The results at present achieved on CdTe and HgI2 detectors are analysed with a number of concrete applications in view such as medium power (0-200 keV) X and γ spectrometry, localisation of γ photons and solid ionisation chambers

  19. Fabrication of pixelated CdTe and CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) are compound semiconductor characterized by wide semiconducting band gap and high photon stopping power due to its high atomic number and density. The mobility-life time product (μ t product) for holes in the materials is smaller than that for electrons. Hence, the effect of trapping losses is more pronounced on holes than on electrons. The trapping losses for holes limit achievable energy resolutions for planar detectors. In this study, pixelated CdTe detectors and pixelated CdZnTe detectors were fabricated and tested by 662 KeV gamma-rays of 137Cs at room temperature. Electrodes were formed on both sides of CdTe crystals and CdZnTe crystals by vacuum evaporation of gold. For purpose of comparison, a planar CdTe detector and a planar CdZnTe detector were evaluated. Since the pixelated CdTe detectors and the pixelated CdZnTe detectors operated as a single-polarity charge sensing device, the obtained energy resolutions were significantly higher than those for the planar detectors. Further improvement of energy resolutions of the detectors will be achieved by optimizing electrode structures. (M. Suetake)

  20. Time walk correction of CdTe detectors using depth sensing technique

    International Nuclear Information System (INIS)

    A digital timing method aiming to minimize the time walk caused by the depth-dependent pulse shape variations in CdTe detectors has been developed. Detector pulses are digitized at the preamplifier stage and a full digital process is carried out to deduce and correct the time walk according to the interaction depth. A time resolution of 6.52 ns FWHM at an energy threshold of 150 keV with a CdTe detector (10x10x1 mm3) is achieved, which is close to the intrinsic resolution of the detector. The method improves the time resolution with no loss of detection efficiency and it is easy to implement. It is confirmed that the slow mobility and the short lifetime of the holes are major obstacles for further improvement in the timing performance of the CdTe detectors. The method is applicable to any semiconductor detector.

  1. Time walk correction of CdTe detectors using depth sensing technique

    OpenAIRE

    Nakhostin, M; Walker, PM; Sellin, PJ

    2010-01-01

    A digital timing method aiming to minimize the time walk caused by the depth-dependent pulse shape variations in CdTe detectors has been developed. Detector pulses are digitized at the preamplifier stage and a full digital process is carried out to deduce and correct the time walk according to the interaction depth. A time resolution of 6.52 ns FWHM at an energy threshold of 150 keV with a CdTe detector (10×10×1 mm3) is achieved, which is close to the intrinsic resolution of the detector. The...

  2. CdTe detector based PIXE mapping of geological samples

    International Nuclear Information System (INIS)

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H+ beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context

  3. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  4. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors

    OpenAIRE

    Calderón, Y.; Chmeissani, M.; Kolstein, M.; De Lorenzo, G.

    2014-01-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm2 area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm3. The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(G...

  5. Performance of a new Schottky CdTe detector for hard x-ray spectroscopy

    Science.gov (United States)

    Takahashi, Tadayuki; Hirose, K.; Matsumoto, Chiho; Takizawa, Kyoko; Ohno, Ryouichi; Ozaki, Tsutomu; Mori, Kunishiro; Tomita, Yasuhiro

    1998-07-01

    We report a significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface using a low work-function metal, indium. For a 2 X 2 mm(superscript 2) detector with a thickness of 0.5 mm the leakage current was measured to be 0.7 nA at room temperature (20 degree(s)C) and 10 pA at -20 degree(s)C for a 400 V bias voltage. The low-leakage current of the detector allows us to operate the detector at a higher bias voltage than previous CdTe detectors. The improved charge collection efficiency and the low-leakage current leads to an energy resolution of 1.1 - 2.5 keV FWHM in the energy range 2 keV to 150 keV at 20 degree(s)C without charge loss correction electronics. We confirmed that once a high electric field of several kV/cm is applied, the Schottky CdTe has a very good energy resolution as well as sufficient stability to be used for practical applications.

  6. CdTe detector use for PIXE characterization of TbCoFe thin films

    International Nuclear Information System (INIS)

    Peltier cooled CdTe detectors have good efficiency beyond the range of energies normally covered by Si(Li) detectors, the most common detectors in PIXE applications. An important advantage of CdTe detectors is the possibility of studying K X-rays lines instead the L X-rays lines in various cases since CdTe detectors present an energy efficiency plateau reaching 70 keV or more. The ITN CdTe useful energy range starts at K-Kα (3.312 keV) and goes up to 120 keV, just above the energy of the lowest γ-ray of the 19F(p, p'γ)19F reaction. In the new ITN HRHE-PIXE line, a CdTe detector is associated to a POLARIS microcalorimeter X-ray detector built by Vericold Technologies GmbH (an Oxford Instruments Group Company). The ITN POLARIS has a resolution of 15 eV at 1.486 keV (Al-Kα) and 24 eV at 10.550 keV (Pb-Lα1). In the present work, a TbCoFe thin film deposited on a Si substrate was analysed at the HRHE-PIXE system. The good efficiency of the CdTe detector at 45 keV (Tb-Kα), and the excellent resolution of POLARIS microcalorimeter at 6.403 keV (Fe-Kα), are presented and the new possibilities open to the IBA analysis of systems with traditionally overlapping X-rays and near mass elements are discussed.

  7. Testing the plutonium isotopic analysis code FRAM with various CdTe detectors.

    Energy Technology Data Exchange (ETDEWEB)

    Vo, Duc T.; Russo, P. A. (Phyllis A.)

    2002-01-01

    The isotopic analysis code Fixed-energy Response-function Analysis with Multiple efficiency (FRAM)1,2 has been proven to successfully analyze plutonium spectra taken with a portable CdTe detector with Peltier cooling, the first results of this kind for a noncryogenic detector.3 These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than Ge spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. This paper describes further testing of FRAM with two CdTe detectors of different sizes and resolutions using different analog and digital, portable multichannel analyzers (MCAs).

  8. New CdTe photoconductor array detector for x-ray applications

    International Nuclear Information System (INIS)

    A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 μm FWHM using a 50 μm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors

  9. Si and CdTe pixel detector developments at SPring-8

    International Nuclear Information System (INIS)

    Single X-ray photon counting pixel detectors have become the most advanced detector technology in synchrotron radiation experiments recently. In particular, the PILATUS detector based on a silicon sensor has reached a very mature state and represents the world's largest detector in this field. This paper first reports on threshold energy calibrations and the capability of applying an energy-resolved X-ray imaging with PILATUS. Second the design of a cadmium telluride (CdTe) pixel detector is described. A high density and high-atomic number sensor material is required in high energy X-ray applications available at SPring-8. For this purpose we are developing a CdTe pixel detector with the SP8-01 readout ASIC covering a wide dynamic range between 10 and 100 keV and containing lower and upper discriminators.

  10. Simulation of active-edge pixelated CdTe radiation detectors

    OpenAIRE

    Duarte, DD; Lipp, JD; Schneider, A.; Seller, P; Veale, MC; Wilson, MD; Baker, MA; Sellin, PJ

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper sh...

  11. Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform

    OpenAIRE

    Kikawa, T.; Ichikawa, A. K.; Hiraki, T.; Nakaya, T.(Kyoto University, Department of Physics, Kyoto, Japan)

    2011-01-01

    Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures b...

  12. Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform

    CERN Document Server

    Kikawa, T; Hiraki, T; Nakaya, T

    2011-01-01

    Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

  13. Si, CdTe and CdZnTe radiation detectors for imaging applications

    OpenAIRE

    Schulman, Tom

    2006-01-01

    The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy Simage Ltd. And Oy Ajat Ltd., Finland for X- and gamma ray imaging are presented. This detector technology evolved from the development of Si strip detectors at the Finnish Research Institute for High Energy Physics (SEFT) which later merged with other physics research units to form the Helsinki Institute of Physics (HIP). General ...

  14. Improvement of the sensitivity of CdTe semiconductor detector in the high energy region

    International Nuclear Information System (INIS)

    Cadmium Telluride, CdTe, semiconductor detectors have sufficient band gap energy (1.47 eV) to use at room temperature, and their atomic number are so large (48 and 52) that their photon detection efficiency is more excellent than that of Si or Ge. Recently CdTe crystals have become easily available because of improvements in the crystal growth method. It is a useful X-ray detector, because it has good energy resolution and high efficiency at the full energy peak at less than a few hundred keV of incident photon energy. However, if the incident photon energy become higher, the efficiency of the full energy peak become worse, and it is very difficult to distinguish the full energy peak above 1 MeV, because the mobility of charge carriers in the CdTe crystal is much smaller than in Si and Ge and it is difficult to produce a larger volume element. In order to analyze the energy of several radioisotopes, it is necessary to improve the sensitivity of CdTe detectors in high energy regions. We have previously suggested a multilayered structure of CdTe elements. This paper describes a simulation and experiment to improve the efficiency of the full energy peak in the high energy region above 1 MeV. (author)

  15. Simulation of active-edge pixelated CdTe radiation detectors

    Science.gov (United States)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  16. Application of CdTe (CdZnTe) detectors for radioactive waste characterization

    CERN Document Server

    Dovbnya, N A; Kutny, V E

    2002-01-01

    The radiation detectors based on wide-zone semiconductor CdTe (CdZnTe) monocrystals have promising advantages for their application in investigation (characterization) of radioactive waste. Among these advantages there are the wide range of photons flux and energy, high registration efficiency and satisfactory energy resolution without deep cooling of the detector. This report discusses the obtained data concerning radiation stability of detectors, influence of different conditions (filters, collimators, registration channel fill etc.) on their energy resolution in spectrometric regime, as well as a dependence of radionuclide identification accuracy on detector size.

  17. Characterization of CdTe0.9Se0.1:Cl strip detectors

    International Nuclear Information System (INIS)

    CdTe0.9Se0.1:Cl is a detector grade material for gamma and X-rays. Its high resistivity and the high mobility lifetime product yield a high charge collection efficiency of 90 percent. CdTe0.9Se0.1:Cl was used for the first time to built up a strip detector. The detector performance was investigated by a 57Co source. The signal behaviour, charge collection efficiency and coupling effects were analyzed for different strips. The comparison between the signal amplitude of all strips showed a good homogeneous response for the device. For a single strip a charge collection efficiency of more than 40 percent was obtained. (orig.)

  18. CdTe detector efficiency calibration using thick targets of pure and stable compounds

    International Nuclear Information System (INIS)

    Quantitative PIXE measurements require perfectly calibrated set-ups. Cooled CdTe detectors have good efficiency for energies above those covered by Si(Li) detectors and turn on the possibility of studying K X-rays lines instead of L X-rays lines for medium and eventually heavy elements, which is an important advantage in various cases, if only limited resolution systems are available in the low energy range. In this work we present and discuss spectra from a CdTe semiconductor detector covering the energy region from Cu (Kα1 = 8.047 keV) to U (Kα1 = 98.439 keV). Pure thick samples were irradiated with proton beams at the ITN 3.0 MV Tandetron accelerator in the High Resolution High Energy PIXE set-up. Results and the application to the study of a Portuguese Ossa Morena region Dark Stone sample are presented in this work.

  19. Frontal IBICC study of the induced proton radiation damage in CdTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pastuovic, Zeljko E-mail: pastu@rudjer.irb.hr; Jaksic, Milko

    2001-07-01

    Within a continuous international effort in developing the non-cryogenic semiconductor detectors for gamma ray spectroscopy, various wide gap materials were considered. With a best performance achieved, CdTe- and CdZnTe-based detectors become today widely accepted and commercially available. In addition to possible future use of such detectors for particle-induced gamma-ray emission (PIGE), nuclear microprobes are in recent years applied more as their characterisation tool using the ion beam-induced charge collection (IBICC) technique. Several CdTe detectors of 2x2x1 mm{sup 3} size were used in this study. On the basis of frontal IBICC measurements of the charge collection efficiency (CCE) distribution, the spectroscopy performance of detectors were measured. Further degradation of charge collection efficiency and the downward trend in peak position were studied by on-line irradiation of CdTe samples with 3 MeV protons up to 10{sup 10} p/cm{sup 2} radiation dose.

  20. Frontal IBICC study of the induced proton radiation damage in CdTe detectors

    Science.gov (United States)

    Pastuović, Željko; Jakšić, Milko

    2001-07-01

    Within a continuous international effort in developing the non-cryogenic semiconductor detectors for gamma ray spectroscopy, various wide gap materials were considered. With a best performance achieved, CdTe- and CdZnTe-based detectors become today widely accepted and commercially available. In addition to possible future use of such detectors for particle-induced gamma-ray emission (PIGE), nuclear microprobes are in recent years applied more as their characterisation tool using the ion beam-induced charge collection (IBICC) technique. Several CdTe detectors of 2×2×1 mm3 size were used in this study. On the basis of frontal IBICC measurements of the charge collection efficiency (CCE) distribution, the spectroscopy performance of detectors were measured. Further degradation of charge collection efficiency and the downward trend in peak position were studied by on-line irradiation of CdTe samples with 3 MeV protons up to 10 10 p/cm2 radiation dose.

  1. GeSn p-i-n waveguide photodetectors on silicon substrates

    International Nuclear Information System (INIS)

    We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices

  2. Evaluation of Polarization Effects of e(-) Collection Schottky CdTe Medipix3RX Hybrid Pixel Detector

    OpenAIRE

    Astromskas, V.; Gimenez, EN; Lohstroh, A; Tartoni, N

    2016-01-01

    This paper focuses on the evaluation of operational conditions such as temperature, exposure time and flux on the polarization of a Schottky electron collection CdTe detector. A Schottky e- collection CdTe Medipix3RX hybrid pixel detector was developed as a part of the CALIPSO-HIZPAD2 EU project. The 128 ×128 pixel matrix and 0.75 mm thick CdTe sensor bump-bonded to Medipix3RX readout chips enabled the study of the polarization effects. Single and quad module Medipix3RX chips were used which ...

  3. Fast polycrystalline CdTe detectors for bunch-by-bunch luminosity monitoring in the LHC

    CERN Document Server

    Brambilla, A; Jolliot, M; Bravin, E

    2008-01-01

    The luminosity at the four interaction points of the Large Hadron Collider (LHC) must be continuously monitored in order to provide an adequate tool for the control and optimisation of beam parameters. Polycrystalline cadmium telluride (CdTe) detectors have previously been tested, showing their high potential to fulfil the requirements of luminosity measurement in the severe environment of the LHC interaction regions. Further, the large signal yield and the fast response time should allow bunch-by-bunch measurement of the luminosity at 40 MHz with high accuracy. Four luminosity monitors with two rows of five polycrystalline CdTe detectors each have been fabricated and will be installed at both sides of the low-luminosity interaction points ALICE and LHC-b. A detector housing was specially designed to meet the mechanical constraints in the LHC. A series of elementary CdTe detectors were fabricated and tested, of which 40 were selected for the luminosity monitors. A sensitivity of 104 electrons per minimum ioni...

  4. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    International Nuclear Information System (INIS)

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

  5. CdTe X-ray detectors for medical computerized tomography

    International Nuclear Information System (INIS)

    The kinetic and lux-ampere characteristics (BAC) of pure CdTe crystals of p- and n-types used as X-ray detectors for medical tomography are studied. It is shown that proper reproducibility of the excitation pulse form, strict LAC linearity and low photocurrent memary of the detectors with a regquired maintained sensitivity maintained may be attained using semi-insulating cadmium telluride crystals with a low concentration of adhesion centers equal to the concentration of recombination levels. In that case, the detector should operate under the double injection regime

  6. Improvement of the sensitivity of CdTe detectors in the high energy regions

    International Nuclear Information System (INIS)

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of 137Cs (662keV) and 60Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  7. Improvement of the sensitivity of CdTe detectors in the high energy regions

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

    1996-07-01

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  8. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  9. Compound semiconductor GaAs and CdTe nuclear radiation detectors

    International Nuclear Information System (INIS)

    The preparation technology and characteristics of semi-insulating bulk single crystal GaAs surface-barrier detectors and single crystal CdTe surface-barrier detectors are described. The spectroscopic performance of the detectors for γ-rays from 125I, 241Am and 57Co at room temperature is given. The influence of the magnitude of forward resistive induced by ohmic contacts and of the surface passivation and aging in the fabrication process of surface-barrier detectors on the performance of the detectors is discussed. Finally, the influence of the fabrication technology of ohmic contacts and selected materials, such as Ni-Ge-Au and In-Ge-Ag, on the performance of the detectors is also studied

  10. Amorphous silicon p-i-n photodetector with Frisch grid for high-speed medical imaging

    Science.gov (United States)

    Allec, Nicholas; Goldan, Amir H.; Wang, Kai; Chen, Feng; Karim, Karim S.

    2010-04-01

    In indirect digital x-ray detectors, photodetectors such as hydrogenated amorphous silicon (a-Si:H) p-i-n photodetectors are used to convert the optical photons generated by the scintillating material to collectible electron-hole pairs. A problem that arises during the collection of the charges is that the mobility and lifetime of both types of carriers (electrons and holes) differ. In a-Si:H, the mobility of holes is much lower than that of electrons which leads to depth-dependent signal variations and causes the charge collection time to be extensive. It has been shown that the use of a Frisch grid can reduce the effect of the slower carriers in direct x-ray detectors. The Frisch grid is essentially a conducting grid that shields carriers from the collecting electrode until they are in close proximity. When the pixel electrodes are properly biased, the grid prevents the slow moving carriers (traveling away from the collecting electrode) from being collected and puts more weight on the fast moving carriers, thus allowing the total charge to be collected in less time. In this paper we investigate the use of a Frisch grid in a-Si:H p-i-n photodetectors for indirect x-ray detectors. Through simulations and theoretical analysis we determine the grid line sizes and positioning that will be most effective for practical p-i-n photodetector designs. In addition we compare the results of photodetectors with and without the grid to characterize the improvement achievable.

  11. Recent Progress in CdTe and CdZnTe Detectors

    OpenAIRE

    Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises du...

  12. Growth and characterization of CdTe single crystals for radiation detectors

    CERN Document Server

    Funaki, M; Satoh, K; Ohno, R

    1999-01-01

    To improve the productivity of CdTe radiation detectors, the crystal growth by traveling heater method (THM) as well as the quality of the fabricated detectors were investigated. In the THM growth, optimization of the solvent volume was found to be essential because it affects the shape of the growth interface. The use of the slightly tilted seed from B was also effective to limit the generation of twins having different directions. Single-crystal (1 1 1) wafers, larger than 30x30 mm sup 2 were successfully obtained from a grown crystal of 50 mm diameter. Pt/CdTe/Pt detectors of dimensions 4x4x2 mm sup 3 , fabricated from the whole crystal ingot, showed an energy resolution (FWHM of 122 keV peak from a sup 5 sup 7 Co source) between 6% and 8%. Similarly, Pt/CdTe/In detectors of dimensions 2x2x0.5 mm sup 3 showed a resolution better than 3%. These characteristics encourage the practical applications of various types of CdTe detectors.

  13. CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

    International Nuclear Information System (INIS)

    Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm3). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

  14. Mechanism of the high X-ray sensitivity of single-crystal CdTe detectors

    International Nuclear Information System (INIS)

    One investigated into the effect of germanium amorphous impurities on X-ray sensitivity and on other features of single-crystals. One investigated into CdTe heat-stable crystals. One proposes a model of a local rearrangement of crystalline lattice near GeCd impurity atom. High X-ray sensitivity of CdTe doped by Ge impurity (doping levels = 3.0x1015 cm-3) is explained by difference of mobility of electrons and holes under ambipolar X-ray conductivity. The optimal impurity-defect composition of p-CdTe crystals serving as high-sensitive active elements of X-ray detectors is characterized by presence of GeCd, VCd defects and of VTe-Tei Frenkel pairs

  15. A CdTe detector for Muon Transverse Profile Measurements

    CERN Document Server

    Placidi, Massimo; Schmickler, Hermann; CERN. Geneva. SPS Division; CERN. Geneva. LHC Division

    2001-01-01

    Beam diagnostics in future High Energy Accelerators will require long lived instrumentation in high radiation environment. Detectors capable of withstanding extreme radiation levels without requiring human intervention and being operated at frontiers of radiation-resistant technology are at a prime for applications in environmental-hostile situations. A research program has been launched at CERN in the framework of instrumentation developments for the LHC project aiming at individuating new solutions and technologies reliable under extreme operational conditions. Preliminary ideas are presented for applications in Muon Beams Diagnostics for future Neutrino Factories of materials presently considered and tested for application in the LHC luminosity detectors.

  16. Recent Progress in CdTe and CdZnTe Detectors

    CERN Document Server

    Takahashi, T; Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and Gamma-ray astronomy missions are briefly discus...

  17. Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

    CERN Document Server

    Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

    2011-01-01

    We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

  18. CdTe detectors in medicine: a review of current applications and future perspectives

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) semiconductor sensors have been evaluated for medical applications for 15 years owing to their high stopping power, convenient energy resolution and operating conditions at room temperature. Most of the applications herein reviewed concern medical imaging procedures, i.e., nuclear medicine, including positron emission tomography and radiology with computerized tomography (XCT). Despite their attractive physical characteristics, their preliminary commercial development has been slowed down in the early 80s because of technical problems, particularly when large arrays were considered, and because of the competition with the more available and less expensive scintillators or xenon chambers which are still mounted in most modern medical imaging systems. Nowadays the characteristics of new materials have allowed the development of restricted but more specific domains of CdTe medical applications i.e. miniaturized nuclear probes dedicated to per-operative tumor detection or ambulatory monitoring of physiological (renal, cardiac) functions and bone absorptiometry using either planar or miniature tomographic systems. Supported by the features and encouraged by the growing competition between ionising and non-ionizing imaging modalities (US, MRI), research work is presently conducted with a view to using CdTe detectors in XCT. (orig.)

  19. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications

    International Nuclear Information System (INIS)

    The CdTe gamma-ray camera IBIS/ISGRI, on board the INTEGRAL satellite launched in October 2002, is currently the largest spectro-imager of this type in the world. The development of this detector, for research in the field of astrophysics, has provided the opportunity to demonstrate the feasibility of massive integration of CdTe nuclear detectors, taking advantage of the CdTe good spectral performances and high modularity. Many other groups in the world work also to further develop detectors using this material in view of improving its spectral performances (crystal quality, electrode geometry and type, electronics and filtering, etc.), the spatial resolution (pixelization of monolithic crystals) and the detection efficiency at high energy (thickness). In this review, I will detail the main directions in which to strive in order to explore these fields in the upcoming years through examples of techniques or applications

  20. GaN-based p-i-n X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Changsheng [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou (China); Graduate University of Chinese Academy of Sciences, Yuquanlu, Beijing (China); Institute of Semiconductors, Chinese Academy of Science, Beijing (China); Fu, Kai [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou (China); Graduate University of Chinese Academy of Sciences, Yuquanlu, Beijing (China); Wang, Guo [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou (China); Peking University Shenzhen Graduate School, Xili Town, Nanshan District, Shenzhen (China); Yu, Guohao; Lu, Min [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou (China)

    2012-01-15

    GaN-based p-i-n X-ray detectors have been fabricated. We observed using SEM that the surface of a GaN sample has a large number of hexagonal defects. The SEM results show that GaN itself contains numerous screw dislocations that will be the flow channel of leakage current, which in turn increased the reverse-bias leakage current of detectors. We have observed a two-step increase in X-ray photocurrent, which is caused by two different detection mechanisms: photovoltaic and photoconductive, and the total photocurrent (J{sub p}) to dark current (J{sub d}) ratio is about 27.7 times and the net photocurrent is about 2.52 {mu}A at 110 V reverse bias. As the X-ray accelerating voltage increases, the photocurrent has a sublinear trend. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. GaN-based p-i-n X-ray detection

    International Nuclear Information System (INIS)

    GaN-based p-i-n X-ray detectors have been fabricated. We observed using SEM that the surface of a GaN sample has a large number of hexagonal defects. The SEM results show that GaN itself contains numerous screw dislocations that will be the flow channel of leakage current, which in turn increased the reverse-bias leakage current of detectors. We have observed a two-step increase in X-ray photocurrent, which is caused by two different detection mechanisms: photovoltaic and photoconductive, and the total photocurrent (Jp) to dark current (Jd) ratio is about 27.7 times and the net photocurrent is about 2.52 μA at 110 V reverse bias. As the X-ray accelerating voltage increases, the photocurrent has a sublinear trend. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    Science.gov (United States)

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18) F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8. PMID:24932209

  3. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  4. Prompt gamma and neutron detection in BNCT utilizing a CdTe detector.

    Science.gov (United States)

    Winkler, Alexander; Koivunoro, Hanna; Reijonen, Vappu; Auterinen, Iiro; Savolainen, Sauli

    2015-12-01

    In this work, a novel sensor technology based on CdTe detectors was tested for prompt gamma and neutron detection using boronated targets in (epi)thermal neutron beam at FiR1 research reactor in Espoo, Finland. Dedicated neutron filter structures were omitted to enable simultaneous measurement of both gamma and neutron radiation at low reactor power (2.5 kW). Spectra were collected and analyzed in four different setups in order to study the feasibility of the detector to measure 478 keV prompt gamma photons released from the neutron capture reaction of boron-10. The detector proved to have the required sensitivity to detect and separate the signals from both boron neutron and cadmium neutron capture reactions, which makes it a promising candidate for monitoring the spatial and temporal development of in vivo boron distribution in boron neutron capture therapy. PMID:26249745

  5. Digital signal processing for CdTe detectors using VXIbus data collection systems

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

    1996-07-01

    Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

  6. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors

    Science.gov (United States)

    Eisen, Y.; Shor, A.

    1998-02-01

    Among the semiconductor materials of a wide band gap, CdTe and CdZnTe have attracted most attention as room-temperature X-ray and gamma-ray detectors. Suitable CdTe materials for nuclear detectors and, in particular, for spectrometers, have been developed over the past few decades and are mainly grown via the traveling heater method (THM). However, the manufacture of large homogeneous ingots at relatively low cost has not reached yet a proven stage. Cd 1- xZn xTe (CZT) materials, mainly grown via the high-pressure Bridgman (HPB) technique, possess several advantages over CdTe and appear to better approach the practicality of providing large volume X-ray and gamma-ray detectors at moderate costs. Continuing effort is still underway to improve the characteristics of both CdTe and CZT materials in order to achieve reproducible detectors for either low- and high-energy gamma rays. This review paper is divided into three parts: The first part describes different structural designs of detectors to improve their spectroscopic characteristics. These include hemispherical detectors, coplanar strip-electrode detectors and monolithic, two-dimensional segmented electrode arrays with pad sizes smaller than their thickness. This part will also describe various electronic methods to compensate for the poor charge collection of holes. The second part compares the characteristics of planar CdTe and CZT nuclear detectors containing metal contacts. Characteristics include: charge collection efficiencies for both electrons and holes indicated by the mobility-lifetime product, energy resolutions, leakage currents and robustness in field use. The third part is devoted to field uses of these detectors. Those include: X-ray fluorescent spectrometers, large volume spectrometers and a new generation nuclear gamma camera for medical diagnostics based on room-temperature solid-state spectrometers.

  7. Improvement of the energy resolution of pixelated CdTe detectors for applications in 0νββ searches

    Science.gov (United States)

    Gleixner, T.; Anton, G.; Filipenko, M.; Seller, P.; Veale, M. C.; Wilson, M. D.; Zang, A.; Michel, T.

    2015-07-01

    Experiments trying to detect 0νββ are very challenging. Their requirements include a good energy resolution and a good detection efficiency. With current fine pixelated CdTe detectors there is a trade off between the energy resolution and the detection efficiency, which limits their performance. It will be shown with simulations that this problem can be mostly negated by analysing the cathode signal which increases the optimal sensor thickness. We will compare different types of fine pixelated CdTe detectors (Timepix, Dosepix, HEXITEC) from this point of view.

  8. Improvement of the energy resolution of pixelated CdTe detectors for applications in 0νββ searches

    International Nuclear Information System (INIS)

    Experiments trying to detect 0νββ are very challenging. Their requirements include a good energy resolution and a good detection efficiency. With current fine pixelated CdTe detectors there is a trade off between the energy resolution and the detection efficiency, which limits their performance. It will be shown with simulations that this problem can be mostly negated by analysing the cathode signal which increases the optimal sensor thickness. We will compare different types of fine pixelated CdTe detectors (Timepix, Dosepix, HEXITEC) from this point of view

  9. Application of a CdTe solid-state detector to polarization-dependent total-reflection fluorescence XAFS measurements

    International Nuclear Information System (INIS)

    A CdTe solid-state detector was applied to the measurement of polarization-dependent total-reflection fluorescence XAFS spectra. The data revealed that the detector has good sensitivity, and this, together with its compact size, make it appropriate for in-situ measurements and removal of X-ray Bragg diffraction. The detector efficiently recorded the high-energy K-edge XAFS spectra for molybdenum oxides supported on TiO2 (110). (au) 10 refs

  10. Simulation studies and spectroscopic measurements of a position sensitive detector based on pixelated CdTe crystals

    OpenAIRE

    Karafasoulis, K.; Zachariadou, K.; Seferlis, S.; Kaissas, I.; Lambropoulos, C.; Loukas, D; Potiriadis, C.

    2010-01-01

    Simulation studies and spectroscopic measurements are presented regarding the development of a pixel multilayer CdTe detector under development in the context of the COCAE project. The instrument will be used for the localization and identification of radioactive sources and radioactively contaminated spots. For the localization task the Compton effect is exploited. The detector response under different radiation fields as well as the overall efficiency of the detector has been evaluated. Spe...

  11. Monte Carlo simulation of the response functions of CdTe detectors to be applied in x-ray spectroscopy

    International Nuclear Information System (INIS)

    In this work, the energy response functions of a CdTe detector were obtained by Monte Carlo (MC) simulation in the energy range from 5 to 160 keV, using the PENELOPE code. In the response calculations the carrier transport features and the detector resolution were included. The computed energy response function was validated through comparison with experimental results obtained with 241Am and 152Eu sources. In order to investigate the influence of the correction by the detector response at diagnostic energy range, x-ray spectra were measured using a CdTe detector (model XR-100T, Amptek), and then corrected by the energy response of the detector using the stripping procedure. Results showed that the CdTe exhibits good energy response at low energies (below 40 keV), showing only small distortions on the measured spectra. For energies below about 80 keV, the contribution of the escape of Cd- and Te-K x-rays produce significant distortions on the measured x-ray spectra. For higher energies, the most important correction is the detector efficiency and the carrier trapping effects. The results showed that, after correction by the energy response, the measured spectra are in good agreement with those provided by a theoretical model of the literature. Finally, our results showed that the detailed knowledge of the response function and a proper correction procedure are fundamental for achieving more accurate spectra from which quality parameters (i.e., half-value layer and homogeneity coefficient) can be determined. - Highlights: • The response function of a CdTe detector was determined by Monte Carlo simulation. • The simulation takes into account all interaction process, the carrier transport and the Gaussian resolution. • The influence of different effects of spectral distortion was investigated. • CdTe detector was applied for x-ray spectroscopy. • The proper correction procedure is needed to achieve realistic x-ray spectra

  12. Characterization inconsistencies in CdTe and CZT gamma-ray detectors

    International Nuclear Information System (INIS)

    In the past few years, significant developments in cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductor materials have taken place with respect to both quality and yield. Many of the more recent developments have occurred in the area of CZT crystal growth. This has resulted in an explosion of interest in the use of these materials in ambient temperature gamma-ray detectors. Most, if not all, of the manufacturers of CdTe and CZT have acquired government funding to continue research in development and applications, indicating the importance of these improvements in material quality. We have examined many detectors, along with the accompanying manufacturer's data, and it has become apparent that a clear standard does not exist by which each manufacturer characterizes the performance of their material. Result is a wide variety of performance claims that have no basis for comparison and normally cannot be readily reproduced. This paper first supports our observations and then proposes a standard that all manufacturers and users of these materials may use for characterization

  13. Optimization of a high-resolution collimator for a CdTe detector: Monte Carlo simulation studies

    International Nuclear Information System (INIS)

    Photon counting detectors using cadmium zinc telluride (CZT) or cadmium telluride (CdTe) have benefits compared to conventional scintillation detectors, and CZT and CdTe have advantageous physical characteristics for nuclear medicine imaging. Recently, many studies have been conducted using these materials to improve the sensitivity and the spatial resolution of the photon counting detector. By using a pixelated parallel-hole collimator, we may be able to improve the sensitivity and the spatial resolution. The purpose of this study was to optimize the design of a collimator to achieve excellent resolution and high sensitivity for a gamma camera system based on the CdTe detector. In this study we simulated a gamma camera system with a photon counting detector based on CdTe and evaluated the system's performance. We performed a simulation study of the PID 350 (Ajat Oy Ltd., Finland) CdTe detector by using a Geant4 Application for Tomographic Emission (GATE) simulation. This detector consists of small pixels (0.35 x 0.35 mm2). We designed two parallel-hole collimators with different shapes and verified their usefulness. One was the proposed pixelated parallel-hole collimator in which the hole size and the pixel size are the same, and the other was the hexagonal parallel-hole collimator, which had a hole size similar to that of the pixelated parallel-hole collimator. We evaluated the sensitivity, spatial resolution, and contrast resolution to determine which parallel-hole collimator was best for the PID 350 CdTe detector. The average sensitivity was 22.65% higher for the pixelated parallel-hole collimator than for the hexagonal parallel-hole collimator. Also, the pixelated parallel-hole collimator provided 10.7% better spatial resolution than the hexagonal parallel-hole collimator, and the contrast resolution was improved by 8.93%. These results reflect an improvement in sensitivity and spatial resolution, and indicate that the imaging performance of the pixelated

  14. A new method for evaluation of transport properties in CdTe and CZT detectors

    CERN Document Server

    Jung, M; Fougeres, P; Hage-Ali, M; Siffert, P

    1999-01-01

    The precise evaluation of transport properties of both electrons and holes in compound semiconductor detectors, like CdTe or CZT, is of great interest for the development of these devices. Although the electron behaviour can be measured in most cases, that of holes is much more difficult. Both alpha or gamma radiations, as well as conventional computer simulations, have shown their limits. In this paper, we present a new approach based on computer simulations, which are performed at various energies. This model will be applied on various kinds of materials. The results will be discussed in terms of sensitivity of the method, electronic noise level as well as electric field distribution within the detector.

  15. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author)

  16. CdTe and CdZnTe crystals for room temperature gamma-ray detectors

    CERN Document Server

    Franc, J; Belas, E; Grill, R; Hlidek, P; Moravec, P; Bok, J B

    1999-01-01

    CdTe(Cl) detectors from CdTe single crystals, grown by the Bridgman method from Te-rich melt, were fabricated. The quality of the detectors was tested with sup 5 sup 7 Co and sup 2 sup 4 sup 1 Am sources. In the sup 5 sup 7 Co spectrum low noise is demonstrated by the presence of a 14 keV peak and good resolution approx 7 keV (FWHM) evident from the separation of 122 and 136 keV peaks. A review is given of the state-of-the-art properties of (CdZn)Te single crystals prepared for substrates in the Institute of Physics of Charles University. The quality of samples is tested by measurements of the diffusion length of minority carriers, from which the mobility-lifetime product is evaluated. (author)

  17. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    Science.gov (United States)

    Gimenez, E. N.; Astromskas, V.; Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N.

    2016-07-01

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e- collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system.

  18. Characterization of CdTe nuclear detectors for gamma radiation spectrometry

    International Nuclear Information System (INIS)

    The crystallography of CdTe is presented. The characterization of CdTe crystals manufactured at LETI was studied using a spectrometry unit, and an experimental study of surface states and contacts was simultaneously undertaken. A manufacturing process was perfected for the detectors: hand polishing and deposit of a drop of conducting lac. Measurements mode on a great number of materials revealed the interest of chlore doping, the polarization phenomenon associated (the polarization is equivalent to a voltage drop and depends on temperature), the effect of surface states and contacts. It was shown that magnesium doping is a failure and the polarization time constant has a value of about 1 msec. An electron time-of-flight experiment was performed in order to measure the mobilities in the sample at normal temperature: the values obtained are: 70-90 cm2/v.sec for holes and 800-1000 cm2/v.sec for electrons. A trapping level was observed at 0.14eV in a Cl- doped sample; trapping parameters were estimated for a few samples

  19. Applications of CdTe detectors in x-ray imaging and metrology

    International Nuclear Information System (INIS)

    Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The characteristic of ohmic contact for these compounds is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm3) where spatial resolution, contrast and wide dynamic are the main criteria. The excitation is typically micros range. X-ray flash radiography with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time in cadmium telluride. In laser fusion experiment the excitation is in the range of 50 ps and the authors develop for such high band devices photoconductive structures able to study very short x-ray emission. Thin polycrystalline MOCVD CdTe films with picosecond response is an alternative material suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (∼50 GHz)

  20. Studies and development of a readout ASIC for pixelated CdTe detectors for space applications

    International Nuclear Information System (INIS)

    The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l'Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit. In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit, related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF-1 pF and a dark current below 5 pA. In the frame of this thesis I have

  1. Study of the spectrometric performances of monolithic CdTe CdZnTe gamma ray detectors

    OpenAIRE

    Gros D'Aillon, Eric

    2005-01-01

    Pixelated monolithic CdTe / CdZnTe semiconductor gamma ray detectors are brought to replace scintillation detectors for medical applications, notably for single photon emission computed tomography (SPECT). In addition to compactness, they present better spectrometric performances: energy resolution, detection efficiency, and spatial resolution. Moreover, the photons depth of interaction in the crystal can be measured. This work aimed in studying experimentally and by simulation the correlatio...

  2. Experimental evaluation of a-Se and CdTe flat-panel x-ray detectors for digital radiography and fluoroscopy

    Science.gov (United States)

    Adachi, Susumu; Hori, Naoyuki; Sato, Kenji; Tokuda, Satoshi; Sato, Toshiyuki; Uehara, Kazuhiro; Izumi, Yoshihiro; Nagata, Hisashi; Yoshimura, Youji; Yamada, Satoshi

    2000-04-01

    Described are two types of direct-detection flat-panel X-ray detectors utilizing amorphous selenium (a-Se) and cadmium telluride (CdTe). The a-Se detector is fabricated using direct deposition onto a thin film transistor (TFT) substrate, whereas the CdTe detector is fabricated using a novel hybrid method, in which CdTe is pre-deposited onto a glass substrate and then connected to a TFT substrate. The detector array format is 512 X 512 with a pixel pitch of 150 micrometer. The imaging properties of both detectors have been evaluated with respect to X-ray sensitivity, lag, spatial resolution, and detective quantum efficiency (DQE). The modulation transfer functions (MTFs) measured at 1 lp/mm were 0.96 for a- Se and 0.65 for CdTe. The imaging lags after 33 ms were about 4% for a-Se and 22% for CdTe. The DQE values measured at zero spatial frequency were 0.75 for a-Se and 0.22 for CdTe. The results indicate that the a-Se and CdTe detectors have high potential as new digital X-ray imaging devices for both radiography and fluoroscopy.

  3. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    Science.gov (United States)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  4. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    International Nuclear Information System (INIS)

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an infarct

  5. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    Science.gov (United States)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  6. Efficiency spectrum of a CdTe X- and γ-ray detector with a Schottky diode

    International Nuclear Information System (INIS)

    A study on the efficiency spectrum of CdTe X- and γ-ray detectors utilizing Schottky diodes for different material parameters and diode structures is reported. Special attention is paid to the effect of deep levels and compensation on space-charge region width. It is shown that charge collection in the neutral region of the detector considerably contributes to the device efficiency. Calculations also show that the efficiency of a stacked detector can be higher than that of a bulk detector with ohmic contacts. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Photo-responsivity characterizations of CdTe films for direct-conversion X-ray detectors

    International Nuclear Information System (INIS)

    We have fabricated and investigated thin, polycrystalline, cadmium-telluride (CdTe) films in order to utilize them for optical switching readout layers in direct-conversion X-ray detectors. The polycrystalline CdTe films are fabricated on ITO glasses by using the physical vapor deposition (PVD) method at a slow deposition rate and a pressure of 10-6 torr. CdTe films with thicknesses of 5 and 20 μm are grown. The electrical and the optical characteristics of the CdTe films are investigated by measuring the dark-current and the photo-current as functions of the applied field under different wavelengths of light. Higher photo-currents are generated at the longer wavelengths of light for the same applied voltage. When a higher electrical field is applied to the 20 μm-thick CdTe film, a higher dark-current, a higher photo-current, a larger number of charges, and a higher quantum efficiency are generated.

  8. Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Xu, Jintong; Li, Chao; Qiao, Hui; Zhang, Yan [State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Li, Xiangyang, E-mail: lixy@mail.sitp.ac.cn [State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2013-12-25

    Highlights: •Planar GaN-based p-i-n photodetector was prepared by ion implantation. •A novel negative differential capacitance (NDC) effect is observed in the photodetector. •The NDC effect is due to the carrier confinement of the deep level centers formed by ion implantation. -- Abstract: In this work, back-illuminated planar GaN-based p-i-n photodetectors were fabricated by Si implantation into GaN-based p-i-n structure grown by metal–organic chemical vapor deposition (MOCVD). The dark current density of the photodetector is 1.03 nA/cm{sup 2} under zero bias. The unbiased responsivity is 0.122 A/W at 360 nm, corresponding to an external quantum efficiency of 42%. Temperature and frequency dependence of capacitance versus voltage characteristics of the photodetectors are also investigated respectively. A novel negative differential capacitance (NDC) effect observed in the photodetector at room temperature under the frequency of 120 kHz or at low temperature under relative high frequency (such as 200 kHz). The NDC effect becomes much more obvious with the temperature or frequency decreased. This novel phenomenon is mainly due to the carrier confinement of the deep level centers in the detector, which mainly include lattice defects formed by high dose ion implantation and subsequent annealing.

  9. Large lateral photovoltaic effect in µc-SiOx:H/a-Si:H/c-Si p-i-n structure

    Science.gov (United States)

    Qiao, Shuang; Chen, Jianhui; Liu, Jihong; Zhang, Xinhui; Wang, Shufang; Fu, Guangsheng

    2016-03-01

    In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated microcrystal silicon-oxygen (µc-SiOx:H)-based p-i-n structure. Compared with LPE in a hydrogenated amorphous silicon (a-Si:H)-based p-i-n structure, this structure showed an abnormal current-voltage (I-V) curve with a lower photoelectric conversion efficiency, but exhibited a much higher LPE with the highest position sensitivity of 64.3 mV/mm. We ascribe this to the enhancement of the lateral gradient of excess transmitted carriers induced by increasing both Schottky barrier and p-type layer body conductivity. Our results suggest that this µc-SiOx:H-based p-i-n structure may be a promising candidate for position-sensitive detectors (PSDs). Moreover, our results may also imply that solar cell devices with abnormal I-V curves (or low efficiency) could find their new applications in other aspects.

  10. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    CERN Document Server

    Eisen, Y; Mardor, I

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used pla...

  11. Development of a modular CdTe detector plane for gamma-ray burst detection below 100 keV

    CERN Document Server

    Ehanno, M; Barret, D; Lacombe, K; Pons, R; Rouaix, G; Gevin, O; Limousin, O; Lugiez, F; Bardoux, A; Penquer, A

    2007-01-01

    We report on the development of an innovative CdTe detector plane (DPIX) optimized for the detection and localization of gamma-ray bursts in the X-ray band (below 100 keV). DPIX is part of an R&D program funded by the French Space Agency (CNES). DPIX builds upon the heritage of the ISGRI instrument, currently operating with great success on the ESA INTEGRAL mission. DPIX is an assembly of 200 elementary modules (XRDPIX) equipped with 32 CdTe Schottky detectors (4x4 mm2, 1 mm thickness) produced by ACRORAD Co. LTD. in Japan. These detectors offer good energy response up to 100 keV. Each XRDPIX is readout by the very low noise front-end electronics chip IDeF-X, currently under development at CEA/DSM/DAPNIA. In this paper, we describe the design of XRDPIX, the main features of the IDeF-X chip, and will present preliminary results of the reading out of one CdTe Schottky detector by the IDeF-X V1.0 chip. A low-energy threshold around 2.7 keV has been measured. This is to be compared with the 12-15 keV threshol...

  12. A 10 cm × 10 cm CdTe Spectroscopic Imaging Detector based on the HEXITEC ASIC

    International Nuclear Information System (INIS)

    The 250 μ m pitch 80x80 pixel HEXITEC detector systems have shown that spectroscopic imaging with an energy resolution of <1 keV FWHM per pixel can be readily achieved in the range of 5–200 keV with Al-pixel CdTe biased to −500 V. This level of spectroscopic imaging has a variety of applications but the ability to produce large area detectors remains a barrier to the adoption of this technology. The limited size of ASICs and defect free CdTe wafers dictates that building large area monolithic detectors is not presently a viable option. A 3-side buttable detector module has been developed to cover large areas with arrays of smaller detectors. The detector modules are 20.35 × 20.45 mm with CdTe bump bonded to the HEXITEC ASIC with coverage up to the edge of the module on three sides. The fourth side has a space of 3 mm to allow I/O wire bonds to be made between the ASIC and the edge of a PCB that routes the signals to a connector underneath the active area of the module. The detector modules have been assembled in rows of five modules with a dead space of 170 μ m between each module. Five rows of modules have been assembled in a staggered height array where the wire bonds of one row of modules are covered by the active detector area of a neighboring row. A data acquisition system has been developed to digitise, store and output the 24 Gbit/s data that is generated by the array. The maximum bias magnitude that could be applied to the CdTe detectors from the common voltage source was limited by the worst performing detector module. In this array of detectors a bias of −400 V was used and the detector modules had 93 % of pixels with better than 1.2 keV FWHM at 59.5 keV. An example of K-edge enhanced imaging for mammography was demonstrated. Subtracting images from the events directly above and below the K-edge of the Iodine contrast agent was able to extract the Iodine information from the image of a breast phantom and improve the contrast of the images

  13. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    International Nuclear Information System (INIS)

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests

  14. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Stahle, C.M. E-mail: carl.stahle@gsfc.nasa.gov; Parker, B.H.; Parsons, A.M.; Barbier, L.M.; Barthelmy, S.D.; Gehrels, N.A.; Palmer, D.M.; Snodgrass, S.J.; Tueller, J

    1999-10-21

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests.

  15. Comparative study for small computer supported clearance determination with 131iodine hippuran using CdTe detectors

    International Nuclear Information System (INIS)

    With the goal to work out a simple, non-invasive method for the total clearance determination also for immobile patients, we carried out this clearance study with CdTe semi-conductor detectors. The 131iodine hippuran clearance determination was carried out on 69 patients in the nuclear medicine department of the Radiological Policlinic in the framework of a routine diagnosis with ambulant and stationary patients with a gamma camera and a connecting evaluation system. At the same time we recorded the shoulder curves using two CdTe semi-conductor detectors and deposited the data in a portable semi-conductor memory. Next the hypotheses for the routine use with the inclusion of commercially common small computers was worked out. The plasma disappearance curves which were recorded over the shoulder region were evaluated with a small computer according to the method of the modified Oberhausen tables and the Oberhausen formula. (orig./DG)

  16. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    International Nuclear Information System (INIS)

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the 'ISIDE' Monte Carlo programme to simulate the CdTe response to gamma rays produced by 57Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector

  17. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    CERN Document Server

    Vittone, E; Lo Giudice, A; Polesello, P; Manfredotti, C

    1999-01-01

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the 'ISIDE' Monte Carlo programme to simulate the CdTe response to gamma rays produced by sup 5 sup 7 Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector.

  18. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    Science.gov (United States)

    Vittone, E.; Fizzotti, F.; Lo Giudice, A.; Polesello, P.; Manfredotti, C.

    1999-06-01

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the "ISIDE" Monte Carlo programme to simulate the CdTe response to gamma rays produced by 57Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector.

  19. Simulation studies and spectroscopic measurements of a position sensitive detector based on pixelated CdTe crystals

    CERN Document Server

    Karafasoulis, K; Seferlis, S; Kaissas, I; Lambropoulos, C; Loukas, D; Potiriadis, C

    2010-01-01

    Simulation studies and spectroscopic measurements are presented regarding the development of a pixel multilayer CdTe detector under development in the context of the COCAE project. The instrument will be used for the localization and identification of radioactive sources and radioactively contaminated spots. For the localization task the Compton effect is exploited. The detector response under different radiation fields as well as the overall efficiency of the detector has been evaluated. Spectroscopic measurements have been performed to evaluate the energy resolution of the detector. The efficiency of the event reconstruction has been studied in a wide range of initial photon energies by exploiting the detector's angular resolution measure distribution. Furthermore, the ability of the COCAE detector to localize radioactive sources has been investigated.

  20. Charge collection efficiency and space charge formation in CdTe gamma and X-ray detectors

    International Nuclear Information System (INIS)

    A new extended model for the charge collection efficiency in CdTe gamma and X ray detectors is presented which allows to derive from apparent experimental gamma spectra of a quasi-monochromatic source, an 241Am source in the present case, not only the μτ products of electrons and holes individually but also the sign, spatial distribution, and temporal evolution of the net space charge accumulated in the detector. Resistive CdTe and CdZnTe as well as CdTe Schottky detectors are studied. While the resistive type is stable in time and exhibits higher μτ products, the Schottky type shows space charge accumulation which approaches saturation after about 1 h at several 1011 cm-3. This is attributed to efficient majority carrier depletion, Fermi level shift, and trap filling. Resistive detectors thus appear optimized to the needs of gamma spectroscopy even at low bias voltage, while Schottky types need higher bias to overcome the space charge. They are suited to both, gamma spectroscopy and X-ray detection in analog current mode, where they operate more stably due to the higher bias. From the point of view of materials characterization, gamma spectroscopy with Schottky detectors probes and reveals the trap density near the Fermi level (several 1012 cm-3 eV-1). We find a basically homogeneous spatial distribution suggesting the trap origin being in crystal growth rather than surface processing. Capture of photogenerated charges in traps is detrimental for current-mode operation under high X-ray flux because delayed emission from traps limits the detector''s ability to respond to fast signal changes. (orig.)

  1. Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications

    Science.gov (United States)

    Hirono, T.; Toyokawa, H.; Furukawa, Y.; Honma, T.; Ikeda, H.; Kawase, M.; Koganezawa, T.; Ohata, T.; Sato, M.; Sato, G.; Takagaki, M.; Takahashi, T.; Watanabe, S.

    2011-09-01

    We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500 μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25 μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.

  2. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications

    International Nuclear Information System (INIS)

    Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  3. Characterization measurement of a thick CdTe detector for BNCT-SPECT – Detection efficiency and energy resolution

    International Nuclear Information System (INIS)

    Author's group is carrying out development of BNCT-SPECT with CdTe device, which monitors the therapy effect of BNCT in real-time. From the design calculations, the dimensions were fixed to 1.5×2×30 mm3. For the collimator it was confirmed that it would have a good spatial resolution and simultaneously the number of counts would be acceptably large. After producing the CdTe crystal, the characterization measurement was carried out. For the detection efficiency an excellent agreement between calculation and measurement was obtained. Also, the detector has a very good energy resolution so that gamma-rays of 478 keV and 511 keV could be distinguished in the spectrum. - Highlights: • BNCT-SPECT is developed with CdTe device to estimate therapy effect of BNCT. • By design calculations, CdTe dimensions are determined to be 1.5×2×30 mm3. Collimator length is 10 cm with 2 mm diameter hole. • Producing the crystal, efficiency and energy resolution were measured. • Excellent agreement was obtained between measurement and calculation. Discrimination of 478 keV and 511 keV was confirmed in the spectrum

  4. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  5. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    Science.gov (United States)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-06-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems.

  6. Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications

    Science.gov (United States)

    Larsson, Anders; Andrekson, Peter A.; Eng, Sverre T.; Yariv, Amnon

    1988-01-01

    Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

  7. Monte Carlo simulation of the response functions of CdTe detectors to be applied in x-ray spectroscopy.

    Science.gov (United States)

    Tomal, A; Santos, J C; Costa, P R; Lopez Gonzales, A H; Poletti, M E

    2015-06-01

    In this work, the energy response functions of a CdTe detector were obtained by Monte Carlo (MC) simulation in the energy range from 5 to 160keV, using the PENELOPE code. In the response calculations the carrier transport features and the detector resolution were included. The computed energy response function was validated through comparison with experimental results obtained with (241)Am and (152)Eu sources. In order to investigate the influence of the correction by the detector response at diagnostic energy range, x-ray spectra were measured using a CdTe detector (model XR-100T, Amptek), and then corrected by the energy response of the detector using the stripping procedure. Results showed that the CdTe exhibits good energy response at low energies (below 40keV), showing only small distortions on the measured spectra. For energies below about 80keV, the contribution of the escape of Cd- and Te-K x-rays produce significant distortions on the measured x-ray spectra. For higher energies, the most important correction is the detector efficiency and the carrier trapping effects. The results showed that, after correction by the energy response, the measured spectra are in good agreement with those provided by a theoretical model of the literature. Finally, our results showed that the detailed knowledge of the response function and a proper correction procedure are fundamental for achieving more accurate spectra from which quality parameters (i.e., half-value layer and homogeneity coefficient) can be determined. PMID:25599872

  8. Charge collection efficiency and space charge formation in CdTe gamma and X-ray detectors

    Science.gov (United States)

    Matz, R.; Weidner, M.

    1998-02-01

    A new extended model for the charge collection efficiency in CdTe gamma and X ray detectors is presented which allows to derive from apparent experimental gamma spectra of a quasi-monochromatic source, an 241Am source in the present case, not only the μρ products of electrons and holes individually but also the sign, spatial distribution, and temporal evolution of the net space charge accumulated in the detector. Resistive CdTe and CdZnTe as well as CdTe Schottky detectors are studied. While the resistive type is stable in time and exhibits higher μτ products, the Schottky type shows space charge accumulation which approaches saturation after about 1 h at several 10 11 cm -3. This is attributed to efficient majority carrier depletion, Fermi level shift, and trap filling. Resistive detectors thus appear optimized to the needs of gamma spectroscopy even at low bias voltage, while Schottky types need higher bias to overcome the space charge. They are suited to both, gamma spectroscopy and X-ray detection in analog current mode, where they operate more stably due ρo the higher bias. From the point of view of materials characterization, gamma spectroscopy with Schottky detectors probes and reveals the trap density near the Fermi level (several 10 12 cm -3 eV -1). We find a basically homogeneous spatial distribution suggesting the trap origin being in crystal growth rather than surface processing. Capture of photogenerated charges in traps is detrimental for current-mode operation under high X-ray flux because delayed emission from traps limits the detector's ability to respond to fast signal changes.

  9. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  10. InGaAs p-i-n Photodiodes for Microwave Applications

    OpenAIRE

    Malyshev, Sergei; Chizh, A.; Andrievski, Vatslav

    2004-01-01

    The experimental and theoretical study of the surface-illuminated InGaAs p-i-n photodiodes for such microwave applications as photonic microwave generation, optical control of microwave circuits and optoelectronic mixing is presented.

  11. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    International Nuclear Information System (INIS)

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images. (paper)

  12. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    Science.gov (United States)

    Cassol, F.; Portal, L.; Graber-Bolis, J.; Perez-Ponce, H.; Dupont, M.; Kronland, C.; Boursier, Y.; Blanc, N.; Bompard, F.; Boudet, N.; Buton, C.; Clémens, J. C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Hustache, S.; Vigeolas, E.; Morel, C.

    2015-07-01

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  13. Measurement 20-200 keV hard X-ray based on CdTe detector in EAST Tokamak

    International Nuclear Information System (INIS)

    Background: Accurate and quantitative measurement of plasma radiation is a key issue to Tokamak, toroidal magnetic confinement device. The radiations from Tokamak cover large energy range. Driven by the determination of the obtaining of hard X-ray spectra, a new system based on a high performance CdTe detector was built up in EAST Tokamak, the first non-circle cross-section in the world. Purpose: Introduces the device of hard X-ray diagnosis system in the EAST Tokamak on the Port A. The system can measure the plasma hard X-ray (20-200 keV) spectra under different discharge conditions, including Ohmical shot and Lower Hybrid Current Drive (LHCD) shot. The research of high speed electron which produced by LHCD is also the aim of the new system. Methods: A high performance CdTe detector was using in EAST Tokamak to measure the hard X-ray (20-200 keV) spectra. Results: The results show that the new system based on a high performance CdTe can meet the requirements for measuring the EAST Tokamak. Conclusions: A preliminary experimental result showed that the system can meet the requirements for measuring the X-ray bremsstrahlung of plasma in the energy range from 20 to 200 keV Calibration result and typical measurement result on EAST are present in this paper. (authors)

  14. Estimation of mammary gland composition using CdTe series detector developed for photon-counting mammography

    Science.gov (United States)

    Ihori, Akiko; Okamoto, Chizuru; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Nakajima, Ai; Kato, Misa; Kodera, Yoshie

    2016-03-01

    Energy resolved photon-counting mammography is a new technology, which counts the number of photons that passes through an object, and presents it as a pixel value in an image of the object. Silicon semiconductor detectors are currently used in commercial mammography. However, the disadvantage of silicon is the low absorption efficiency for high X-ray energies. A cadmium telluride (CdTe) series detector has a high absorption efficiency over a wide energy range. In this study, we proposed a method to estimate the composition of the mammary gland using a CdTe series detector as a photon-counting detector. The fact that the detection rate of breast cancer in mammography is affected by mammary gland composition is now widely accepted. Assessment of composition of the mammary gland has important implications. An important advantage of our proposed technique is its ability to discriminate photons using three energy bins. We designed the CdTe series detector system using the MATLAB simulation software. The phantom contains nine regions with the ratio of glandular tissue and adipose varying in increments of 10%. The attenuation coefficient for each bin's energy was calculated from the number of input and output photons possessed by each. The evaluation results obtained by plotting the attenuation coefficient μ in a three-dimensional (3D) scatter plot show that the plots had a regular composition order congruent with that of the mammary gland. Consequently, we believe that our proposed method can be used to estimate the composition of the mammary gland.

  15. Characterization measurement of a thick CdTe detector for BNCT-SPECT - detection efficiency and energy resolution.

    Science.gov (United States)

    Murata, Isao; Nakamura, Soichiro; Manabe, Masanobu; Miyamaru, Hiroyuki; Kato, Itsuro

    2014-06-01

    Author׳s group is carrying out development of BNCT-SPECT with CdTe device, which monitors the therapy effect of BNCT in real-time. From the design calculations, the dimensions were fixed to 1.5×2×30mm(3). For the collimator it was confirmed that it would have a good spatial resolution and simultaneously the number of counts would be acceptably large. After producing the CdTe crystal, the characterization measurement was carried out. For the detection efficiency an excellent agreement between calculation and measurement was obtained. Also, the detector has a very good energy resolution so that gamma-rays of 478keV and 511keV could be distinguished in the spectrum. PMID:24581600

  16. Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Gostilo, V.; Ivanov, V.; Kostenko, S.; Lisjutin, I.; Loupilov, A.; Nenonen, S.; Sipila, H.; Valpas, K

    2001-03-11

    Current and spectrometrical characteristics, stability in time and reliability of pixel and strip detectors depend on initial material properties, crystal processing quality and contacts manufacture technology. The work presents analysis of current-voltage and spectrometrical characteristics for initial CdTe and CdZnTe crystals applied for pixel and strip detectors manufacture. The crystal surface preparation before contacts manufacture comprises a modified technology. The contacts were made by photolithography with the surface protected by photoresist with further windows lift-off and crystal surface metallization in lifted-off windows. Metal pads were made by gold deposition from chloroauric acid. Thermocompression, ultrasonic and pulse wirebonding, as well as traditional contacts glueing method for CdTe and CdZnTe detectors have been tested for contacts wiring. The pulse wirebonding has revealed the best results. Wiring is made of gold wire with a diameter of 30 {mu}m and is good enough for pixel and strip wirebonding, providing rather low labour-intensiveness for their assembly by standard equipment. The possibility of fabrication of pressing contacts to strip and pixel detectors by Zebra elastomeric connectors has been investigated. The pressing contacts have provided qualitative and reliable electrical contact and signal layout from pixels and strips to readout electronics. Developed technologies were applied in the manufacture of the following CdTe and CdZnTe detectors: 4x4 pixels detector with rectangular pixels 0.65x0.65 mm and pitch 0.75 mm; 4x4 pixels ring miltiple-electrode detector with anode diameter 0.32 mm and pitch 0.75 mm; strip detector with 100 {mu}m width strip and 125 {mu}m pitch. The 4x4 pixels CdZnTe detector has provided at optimal temperature energy resolutions of 808 eV and 1.19 keV at energies of 5.9 and 59.6 keV, respectively. Interstrip resistance between two strips with a distance of 25 {mu}m on detector was 2-8 G{omega}.

  17. Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

    International Nuclear Information System (INIS)

    Current and spectrometrical characteristics, stability in time and reliability of pixel and strip detectors depend on initial material properties, crystal processing quality and contacts manufacture technology. The work presents analysis of current-voltage and spectrometrical characteristics for initial CdTe and CdZnTe crystals applied for pixel and strip detectors manufacture. The crystal surface preparation before contacts manufacture comprises a modified technology. The contacts were made by photolithography with the surface protected by photoresist with further windows lift-off and crystal surface metallization in lifted-off windows. Metal pads were made by gold deposition from chloroauric acid. Thermocompression, ultrasonic and pulse wirebonding, as well as traditional contacts glueing method for CdTe and CdZnTe detectors have been tested for contacts wiring. The pulse wirebonding has revealed the best results. Wiring is made of gold wire with a diameter of 30 μm and is good enough for pixel and strip wirebonding, providing rather low labour-intensiveness for their assembly by standard equipment. The possibility of fabrication of pressing contacts to strip and pixel detectors by Zebra elastomeric connectors has been investigated. The pressing contacts have provided qualitative and reliable electrical contact and signal layout from pixels and strips to readout electronics. Developed technologies were applied in the manufacture of the following CdTe and CdZnTe detectors: 4x4 pixels detector with rectangular pixels 0.65x0.65 mm and pitch 0.75 mm; 4x4 pixels ring miltiple-electrode detector with anode diameter 0.32 mm and pitch 0.75 mm; strip detector with 100 μm width strip and 125 μm pitch. The 4x4 pixels CdZnTe detector has provided at optimal temperature energy resolutions of 808 eV and 1.19 keV at energies of 5.9 and 59.6 keV, respectively. Interstrip resistance between two strips with a distance of 25 μm on detector was 2-8 GΩ

  18. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung [Yonsei University, Wonju (Korea, Republic of)

    2012-07-15

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radio pharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  19. Discrimination between normal breast tissue and tumor tissue using CdTe series detector developed for photon-counting mammography

    Science.gov (United States)

    Okamoto, Chizuru; Ihori, Akiko; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Kato, Misa; Nakajima, Ai; Kodera, Yoshie

    2016-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) series photon-counting detector, having high absorption efficiency over a wide energy range. In a previous study, we showed that the use of high X-ray energy in digital mammography is useful from the viewpoint of exposure dose and image quality. In addition, the CdTe series detector can acquire X-ray spectrum information following transmission through a subject. This study focused on the tissue composition identified using spectral information obtained by a new photon-counting detector. Normal breast tissue consists entirely of adipose and glandular tissues. However, it is very difficult to find tumor tissue in the region of glandular tissue via a conventional mammogram, especially in dense breast because the attenuation coefficients of glandular tissue and tumor tissue are very close. As a fundamental examination, we considered a simulation phantom and showed the difference between normal breast tissue and tumor tissue of various thicknesses in a three-dimensional (3D) scatter plot. We were able to discriminate between both types of tissues. In addition, there was a tendency for the distribution to depend on the thickness of the tumor tissue. Thinner tumor tissues were shown to be closer in appearance to normal breast tissue. This study also demonstrated that the difference between these tissues could be made obvious by using a CdTe series detector. We believe that this differentiation is important, and therefore, expect this technology to be applied to new tumor detection systems in the future.

  20. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    International Nuclear Information System (INIS)

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radio pharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  1. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    Science.gov (United States)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung

    2012-07-01

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radiopharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small-animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  2. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    Science.gov (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  3. Performance of CdTe gamma-ray detectors fabricated in a new M π n design

    Science.gov (United States)

    Niraula, M.; Mochizuki, D.; Aoki, T.; Tomita, Y.; Hatanaka, Y.

    2000-06-01

    CdTe radiation detectors have been fabricated in a new M-π-n structure that provides very effective blocking for the leakage current and, as a result, excellent spectral responses are achieved. An iodine-doped n-CdTe layer was grown on the Te-faces of the (1 1 1)-oriented high-resistivity (˜10 9 Ω cm) ρ-type CdTe wafers at the low substrate temperature of 150°C. An aluminum electrode was evaporated on the n-CdTe side, while a gold electrode was evaporated on the other side. Low leakage current around 60 pA/mm 2 was typically attained for a 0.5 mm thick detector at room-temperature (25°C) for an applied reverse bias of 250 V. Improved charge collection efficiency and spectral responses for different radioisotopes in the energy range of a few tens of keV to several hundreds of keV were obtained due to the application of very large electric fields on the detectors. The performance of the detectors thus fabricated is presented.

  4. Optimization of the SPECT systems based on a CdTe pixelated semiconductor detector using novel parallel-hole collimators

    International Nuclear Information System (INIS)

    Recently, many studies have been conducted using semiconductor materials to improve the system's sensitivity and spatial resolution. We are able to improve the spatial resolution by using a pixelated parallel-hole collimator with equal hole and pixel sizes. However, pixelated parallel-hole collimator appears to be problematic to manufacture collimator with small holes. Therefore, we presented an idea for a novel parallel-hole collimator with a cadmium telluride (CdTe) pixelated semiconductor detector. The purpose of this study was to evaluate and optimize the novel parallel-hole collimator geometric designs with CdTe pixelated semiconductor detector using GATE simulation program. This detector was modeled on PID 350 (Oy Ajat, Finland). We designed a novel parallel-hole collimator which consists of the two overlapped pixelated parallel-hole collimators. The overlap ratios of these collimators are 1:1, 1:2, 2:1, 1:3, 3:1, 1:4, and 4:1. To evaluate the performance of this system, system's sensitivity and spatial resolution were estimated. Additionally, image figure of merit (FOM) were calculated from the sensitivity and spatial resolution for the optimization of the novel parallel-hole collimator. According to the results, the measured averages of sensitivity using the 1:1, 1:2, 2:1, 1:3, 3:1, 1:4, and 4:1 ratio were 4.45, 7.56, 7.51, 12.76, 12.65, 20.01, and 19.90 times higher than that of the pixelated parallel-hole collimator, respectively, and the measured averages of spatial resolution were estimated various values depending on the source-to-collimator distances. Finally, the FOM using the pixelated parallel-hole collimator, 1:1, 1:2, 2:1, 1:3, 3:1, 1:4, and 4:1 ratio were 0.57, 0.73, 1.05, 1.13, 1.47, 1.62, 1.95, and 2.15, respectively. We designed a novel parallel-hole collimator with various ratios of collimator septal heights using a CdTe pixelated semiconductor detector. In conclusion, we successfully established a novel parallel-hole collimator

  5. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    Science.gov (United States)

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

  6. An automated dosimetry system for CT scanners using silicon P-i-n diodes

    International Nuclear Information System (INIS)

    A revolution in diagnostic radiology was started in 1967 when Hounsfield developed a new x-ray transmission system - the computed axial tomography scanner (CT scanner). This device uses an x-ray source that scans (axially) through a section of the patient's body. Transmitted photons proportional to the density of the material they must traverse are detected and computer reconstructed to produce an image of the tomographic plane of the patient (slice). Only limited dosimetric studies have been performed on CT scanners. Many factors may influence the dose given to patients during a diagnostic study including the scan width, the scan time, the number of slices taken, and the voltage and current settings of the x-ray tube on a particular unit. Adequate health care planning and delivery requires that detailed dosimetric studies be conducted on CT scanners during their infancy. If this can be done, possible questions and criticisms as to the usefulness of this type of diagnostic procedure can be largely eliminated. The study proposed involves the design and construction of a portable radiation dosimetry phantom for CT scanner operations. At the present, there is no efficient method of obtaining accurate X-Y as well as Z-axis dose information from a scanner. Silicon P-i-n diodes, used as the radiation sensors, are arranged inside a phantom to provide reproducible positional and directional dosimetric measurements. Data acquisition circuitry is used to convert the unprocessed signals into a form that is microcomputer compatible. Data storage operations, the application of correction factors, and other manipulations are provided by the microcomputer before transfer to an output display device. The final form of the data consists of absorbed dose values corresponding to the radiation received by the semiconductor detectors. (author)

  7. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i1-p-i2-n-i3 multilayers. The i2 layer (typically 1 ∼ 3 microm) achieves an electric field > 106 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  8. Charge collection properties of a CdTe Schottky diode for x- and γ-rays detectors

    International Nuclear Information System (INIS)

    The electrical characteristics of x-ray and γ-ray detectors with Schottky diodes on the basis of CdTe crystals of n-type conductivity with a resistivity of 102–103 Ω cm (300 K) are investigated. The necessary parameters of the diode structures are determined to interpret the detection characteristics of the detectors. The dependences of the charge-collection efficiency in the detectors on the carrier lifetime and concentration of uncompensated donors are obtained and the conditions for the total collection of charges generated by the photon absorption are established. Taking into account drift and diffusion photocurrent components, the spectral distribution of the quantum detection efficiency is calculated. The comparative analysis of the detection efficiency of Schottky diodes based on low-resistivity p-CdTe and n-CdTe shows the advantages of the latter, especially in a low x-ray energy region

  9. Electric Field and Current Transport Mechanisms in Schottky CdTe X-ray Detectors under Perturbing Optical Radiation

    Directory of Open Access Journals (Sweden)

    Isabella Farella

    2013-07-01

    Full Text Available Schottky CdTe X-ray detectors exhibit excellent spectroscopic performance but suffer from instabilities. Hence it is of extreme relevance to investigate their electrical properties. A systematic study of the electric field distribution and the current flowing in such detectors under optical perturbations is presented here. The detector response is explored by varying experimental parameters, such as voltage, temperature, and radiation wavelength. The strongest perturbation is observed under 850 nm irradiation, bulk carrier recombination becoming effective there. Cathode and anode irradiations evidence the crucial role of the contacts, the cathode being Ohmic and the anode blocking. In particular, under irradiation of the cathode, charge injection occurs and peculiar kinks, typical of trap filling, are observed both in the current-voltage characteristic and during transients. The simultaneous access to the electric field and the current highlights the correlation between free and fixed charges, and unveils carrier transport/collection mechanisms otherwise hidden.

  10. Possible use of CdTe detectors in kVp monitoring of diagnostic x-ray tubes

    OpenAIRE

    Krmar, M.; Bucalović, N.; Baucal, M.; Jovančević, N.

    2010-01-01

    It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of x-ray photon spectra) should be monitored routinely; however a standardized noninvasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent x-ray lines registered after irradiation of some material by an x-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to dist...

  11. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior

    OpenAIRE

    Jeong Seok Lee; Dong-Goo Kang; Seung Oh Jin; Insoo Kim; Soo Yeol Lee

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-con...

  12. Voxel imaging pet pathfinder: a novel approach to positron emission tomography based on room temperature pixelated CdTe detector

    OpenAIRE

    Mikhaylova, Ekaterina

    2014-01-01

    El objetivo principal de esta investigación es la simulación y la evaluación de un nuevo concepto de escáner de tomografía por emisión de positrones (PET) basado en un detector pixelado de CdTe en el marco del proyecto “Voxel Imaging PET (VIP) Pathfinder”. El diseño se ha simulado con el programa “GEANT4-based Architecture for Medicine-Oriented Simulations” (GAMOS). El sistema se ha examinado siguiendo las prescripciones de los protocolos NEMA para la evaluación de los dispositivos PET. Varia...

  13. Voxel imaging pet pathfinder: a novel approach to positron emission tomography based on room temperature pixelated CdTe detector

    OpenAIRE

    Mikhaylova, Ekaterina; Fernandez Sanchez, Enrique

    2014-01-01

    El objetivo principal de esta investigación es la simulación y la evaluación de un nuevo concepto de escáner de tomografía por emisión de positrones (PET) basado en un detector pixelado de CdTe en el marco del proyecto "Voxel Imaging PET (VIP) Pathfinder". El diseño se ha simulado con el programa "GEANT4-based Architecture for Medicine-Oriented Simulations" (GAMOS). El sistema se ha examinado siguiendo las prescripciones de los protocolos NEMA para la evaluación de los dispositivos PET. Varia...

  14. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    OpenAIRE

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to dig...

  15. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    OpenAIRE

    Changxin Chen; Chenghao Liao; Liangming Wei; Hanqing Zhong; Rong He; Qinran Liu; Xiaodong Liu; Yunfeng Lai; Chuanjuan Song; Tiening Jin; Yafei Zhang

    2016-01-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation c...

  16. A p-i-n junction diode based on locally doped carbon nanotube network

    OpenAIRE

    Xiaodong Liu; Changxin Chen; Liangming Wei; Nantao Hu; Chuanjuan Song; Chenghao Liao; Rong He; Xusheng Dong; Ying Wang; Qinran Liu; Yafei Zhang

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field...

  17. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    OpenAIRE

    Anna Maria Mancini; Andrea Zappettini; Ezio Caroli; Leonardo Abbene; Stefano Del Sordo; Pietro Ubertini

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status...

  18. Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

    NARCIS (Netherlands)

    Kind, R.; Van Swaaij, R.A.C.M.M.; Rubinelli, F.A.; Solntsev, S.; Zeman, M.

    2011-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate

  19. Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

    Directory of Open Access Journals (Sweden)

    V.N. Murashev

    2015-06-01

    Full Text Available In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity, the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.

  20. Performance evaluation of three-dimensional position-sensitive CdTe detector blocks for an ultra-high resolution brain PET scanner

    International Nuclear Information System (INIS)

    We have developed an ultra-high resolution human brain positron emission tomography (PET) scanner with the resolution of less than 1 mm FWHM, in which cadmium telluride (CdTe) semiconductor detectors were used. As the detector of the scanner, we have developed a two-dimensional position-sensitive CdTe detector (2D-PSD) which was developed in our previous study. The 2D-PSD can detect gamma rays with a position resolution of approximately 1.2 mm. We developed a three-dimensional position-sensitive CdTe detector block (3D-PSD block) by stacking 80 2D-PSDs which were connected to subsequent circuits (amplifiers, analog to digital converters, and other data processing circuits). We constructed an ultra-high resolution semiconductor brain PET gantry placing the ten 3D-PSD blocks in decagonal arrangement. In this paper, we checked all 2D-PSDs and classified their performance. As the results, we confirmed that our 3D-PSD blocks can be used to the ultra-high resolution human brain PET. We made a circuit to reduce the dead time due to restoration from polarization phenomena in CdTe detector and we could stabilize count rates. (author)

  1. Study of unfolding methods for X-ray spectra obtained with CDTE detectors in the mammography energy range

    International Nuclear Information System (INIS)

    Quality control parameters for an X-ray tube strongly depend on the accurate knowledge of the primary spectrum, but it is difficult to obtain it experimentally by direct measurements. Indirect spectrometry techniques such as Compton scattering can be used in X-ray spectrum assessment avoiding the pile-up effect in detectors. However, an unfolding method is required for this kind of measurements. In previous works, a methodology to assess primary X-ray spectra in the diagnostic energy range by means of the Compton scattering technique has been analysed. This methodology included a Monte Carlo simulation model, using the MCNP5 code, of the actual experimental set-up providing a Pulse Height Distribution (PHD) for a given primary spectrum. It reproduced the interaction of photons and electrons with the Compton spectrometer and with a High Purity Germanium detector. In this work, a CdTe detector is proposed instead of the HP Germanium. CdTe detector does not require a liquid nitrogen cooling system, but its resolution is poor for the same energy range and its efficiency comes down for energies greater than 55 keV being 70% at 90 keV. In despite of these disadvantages, CdTe detector has been considered due to its low cost and easy handling and portability. The model can provide a PHD and a Response Matrix, for different X-ray spectra, taken from the IPEM 78 catalogue. The primary spectrum can be estimated applying the MTSVD (Modified Truncated Singular Value Decomposition) and the Tikhonov unfolding method. Both unfolding methods cause some loss of information on the reconstructed primary spectra. In this paper, a comparison of the ability to obtain primary spectra using both MTSVD and Tikhonov unfolding methods has been done. As well a sensitivity analysis in order to test the proposed unfolding methods when they are applied to PHDs obtained with the MCNP model has been developed. A variation on parameters such as target materials and voltages over the mammography

  2. Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x/γ-ray detectors

    International Nuclear Information System (INIS)

    In this paper we report on the strong impact of the concentration of uncompensated impurities on the detection efficiency of CdTe and Cd0.9Zn0.1Te Schottky diodes. The results of our study explain the observed poor detection properties of some Cd0.9Zn0.1Te detectors with resistivity and lifetime of carriers comparable to those of good CdTe detectors. We show that the concentration of uncompensated impurities in a highly efficient CdTe Schottky diode detector is several orders of magnitude higher than that of a CdZnTe, which does not register the gamma spectra of commonly used isotopes (59–662 keV) by using photoelectric measurements. The significant difference of the concentration of uncompensated impurities between CdTe and Cd0.9Zn0.1Te crystals is confirmed by our study of the temperature change of the resistivity and of the Fermi level energy. The degree of compensation of the donor complex, responsible for the electrical conductivity of the material, is much lower in the CdTe crystal compared to that in the Cd0.9Zn0.1Te crystal. The calculations of the detection efficiency of x/γ-radiation by a Schottky diode result in a dependence on the concentration of uncompensated impurities described by a curve with a pronounced maximum. The position of this maximum occurs at a concentration of uncompensated impurities which ranges from 3 × 1010 to 3 × 1012 cm−3 depending on the registered photon energy of x/γ-rays and on the lifetime of the charge carriers. Our measurements and calculations lead to the conclusion that the concentration of uncompensated impurities in this range is a necessary condition for the effective operation of x- and γ-ray Schottky diode detectors based on CdTe and Cd1−xZnxTe crystals

  3. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    Energy Technology Data Exchange (ETDEWEB)

    Zumbiehl, A. E-mail: zumbiehl@phase.c-strasbourg.fr; Hage-Ali, M.; Fougeres, P.; Koebel, J.M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P

    2001-08-11

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a 'pseudo-Monte Carlo' simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios (W/L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  4. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    Science.gov (United States)

    Zumbiehl, A.; Hage-Ali, M.; Fougeres, P.; Koebel, J. M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P.

    2001-08-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a "pseudo-Monte Carlo" simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios ( W/ L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  5. Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon

    International Nuclear Information System (INIS)

    Microselective-area growth of p-i-n InGaAs disks on (111) silicon by metalorganic chemical vapor deposition is a promising technology for III/V-on-Si integration. As a proof-of-concept, room-temperature electroluminescence is reported from ensembles of p-i-n InGaAs-on-Si micro-disks. The observed spectrum shows peak luminescence at 1.78 μm with a local maxima at 1.65 μm. The disks are also shown to generate a measurable photo current when illuminated by infrared light with less energy than the silicon bandgap energy. This makes these InGaAs-on-Si disks a promising technology for monolithic integration of light sources and detectors with silicon photonics and complementary metal-oxide-semiconductor electronics for optical communication, sensing, and imaging.

  6. Silicon P.I.N. Junctions used for studies of radiation damage

    International Nuclear Information System (INIS)

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author)

  7. Waveguide photonic crystals with characteristics controlled with p-i-n diodes

    International Nuclear Information System (INIS)

    A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.

  8. Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

    OpenAIRE

    Rajasekharan, B.; van der Salm, C.; Hueting, R.J.E.; Hoang, Van T.; Schmitz, J.

    2008-01-01

    Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.

  9. Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes

    OpenAIRE

    Li, Cheng; Lai, Hongkai; Chen, Songyan; Suemasu, T.; Hasegawa, F

    2006-01-01

    The temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes with a layer of beta-FeSi2 particles inserted in intrinsic silicon was investigated. Anomalous blueshift of the peak energy and enhanced electroluminescence intensity of the silicon band-edge emission were observed at temperatures from 50 to 200 K. The electroluminescence intensity was enhanced due to longer diffusion paths of the injected electrons at elevated temperature, as well as thermal escape ...

  10. A p-i-n junction diode based on locally doped carbon nanotube network

    Science.gov (United States)

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

  11. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  12. Performance of a 6 mm thick CdTe detector for 166 keV gamma rays

    Science.gov (United States)

    McKee, B. T. A.; Goetz, T.; Hazlett, T.; Forkert, L.

    1988-11-01

    In order to extend the utility of CdTe detectors to higher gamma ray energies, yet avoid increasing the charge collection problems of thick detectors, a 6 mm thick detector configuration has been developed consisting of three crystals 2 mm thick and of 16 mm diameter. The active volume is over 1.0 cm 3. The performance of this detector has been evaluated for gamma rays of 166 keV energy by measuring the pulse height spectra and determining the intrinsic peak and total efficiencies over a range of bias voltages and amplifier time constants. A maximum peak and total efficiency of 41% and 80% were obtained with 200 V bias and 2 μs amplifier time constant, although under these conditions the noise width was almost 40 keV FWHM. A Monte Carlo model was used to simulate the gamma ray and electron interaction in this 6 mm detector. Charge collection, including trapping effects, was incorporated into the model. The model pulse height spectra could be approximately matched to the measured data using hole and electron effective mobility values of 60 and 600 cm 2/V s, and hole and electron mean trapping times of 25 and 15 μs. Our findings indicate that detectors such as this will not be useful for high resolution spectroscopic applications, but the high gamma ray stopping power will be of interest for applications where the noise width is acceptable. Results from the modelling imply that in this detector shallow trapping sites (reducing the effective mobility) are more important than deep trapping sites in contributing to incomplete charge collection.

  13. Performance of a 6 mm thick CdTe detector for 166 keV gamma rays

    Energy Technology Data Exchange (ETDEWEB)

    McKee, B.T.A.; Goetz, T.; Hazlett, T.; Forkert, L.

    1988-11-01

    In order to extend the utility of CdTe detectors to higher gamma ray energies, yet avoid increasing the charge collection problems of thick detectors, a 6 mm thick detector configuration has been developed consisting of three crystals 2 mm thick and of 16 mm diameter. The active volume is over 1.0 cm/sup 3/. The performance of this detector has been evaluated for gamma rays of 166 keV energy by measuring the pulse height spectra and determining the intrinsic peak and total efficiencies over a range of bias voltages and amplifier time constants. A maximum peak and total efficiency of 41% and 80% were obtained with 200 V bias and 2 ..mu..s amplifier time constant, although under these conditions the noise width was almost 40 keV FWHM. A Monte Carlo model was used to simulate the gamma ray and electron interaction in this 6 mm detector. Charge collection, including trapping effects, was incorporated into the model. The model pulse height spectra could be approximately matched to the measured data using hole and electron effective mobility values of 60 and 600 cm/sup 2//V s, and hole and electron mean trapping times of 25 and 15 ..mu..s. Our findings indicate that detectors such as this will not be useful for high resolution spectroscopic applications, but the high gamma ray stopping power will be of interest for applications where the noise width is acceptable. Results from the modelling imply that in this detector shallow trapping sites (reducing the effective mobility) are more important than deep trapping sites in contributing to incomplete charge collection.

  14. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior

    Science.gov (United States)

    Lee, Jeong Seok; Kang, Dong-Goo; Jin, Seung Oh; Kim, Insoo; Lee, Soo Yeol

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components. PMID:27077856

  15. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior

    Directory of Open Access Journals (Sweden)

    Jeong Seok Lee

    2016-04-01

    Full Text Available Fast and accurate energy calibration of photon counting spectral detectors (PCSDs is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components.

  16. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1-xZnxTe-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1-xZnxTe detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior.

    Science.gov (United States)

    Lee, Jeong Seok; Kang, Dong-Goo; Jin, Seung Oh; Kim, Insoo; Lee, Soo Yeol

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components. PMID:27077856

  18. Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Dixit, V.K., E-mail: dixit@rrcat.gov.in; Khamari, Shailesh K.; Manwani, Sapna; Porwal, S.; Alexander, K.; Sharma, T.K.; Kher, S.; Oak, S.M.

    2015-06-11

    Metal organic vapor phase epitaxy grown GaAs p-i-n photodetector devices are fabricated and tested for the assessment of practical usage of the detector after the exposure to high radiation doses of γ-ray. Increased values of saturation current, ideality factor and leakage current after 360 kGy γ-ray irradiation confirm a substantial increase in the number of generation–recombination centers. It is further observed that the leakage current density, current per unit volume (J{sub v}), increases linearly with the radiation fluence (Φ). The slope (α=ΔJ{sub v}/ΔΦ) of the leakage current density versus γ-ray radiation fluences curve is two order less (4–5×10{sup −l9} A/cm) for GaAs compared to Si (4–6×10{sup −l7} A/cm). The lower value of α (radiation damage constant) confirms that GaAs is radiation harder than Si. Subsequently, it is also observed that the photo response of 360 kGy γ-ray irradiated GaAs device is reduced by ~50% due to the reduction of quantum efficiency by the radiation induced generation–recombination centers. The functionality of the irradiated sensor is verified by comparing the response of the pristine and irradiated detectors to the photoluminescence of semiconductor quantum well structures.

  19. Improved designs for p-i-n OLEDs towards the minimal power loss of devices

    Science.gov (United States)

    Qin, Dashan

    2014-05-01

    Currently, the low yield, high power loss, and poor stability of organic light emitting diodes (OLEDs) panels are remaining as the obstacles to the fast growth of the OLED industry, especially for the lighting application. The p-i-n OLEDs have been widely recognized as the promising method to circumvent these bottleneck factors, due to the unique merit of the electrical doping to enable low power loss. In p-i-n OLEDs, the frequently used n-doped electron transport layers (n-ETL1) such as n-BCP, n-Alq3 possess markedly lower conductivities but better capabilities of injecting electrons into ETL such as BCP, Alq3, as compared to another class of n-doped ETLs (n-ETL2), e.g., n-NTCDA, n-PTCDA, n-C60. Thus, in order to minimize the electron loss, we provide the structure of uniting two n-doped layers, cathode/ n-ETL2/ n-ETL1/ ETL. In p-i-n OLEDs, the hole current injected from the single p-doped hole transport layer (p-HTL) into the neat HTL must be limited, because the higher conductivity p-HTL has the higher lying highest occupied molecular orbital (HOMO) level, leading to a larger hole transport energy barrier (φB) at the interface with the neat HTL. Therefore, in order to minimize the hole loss, we suggest the structure of uniting two p-HTLs, anode/ p-HTL2/ p-HTL1/ HTL. The p-HTL2 possesses high-lying HOMO level and thereby high conductivity, decreasing the ohmic loss in the hole conduction; the p-HTL1 features a low-lying HOMO level, reducing the φB.

  20. Defects influence on short circuit current density in p-i-n silicon solar cell

    International Nuclear Information System (INIS)

    The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer

  1. Density of states measurements in a p-i-n solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Crandall, R.S.; Wang, Q. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.

  2. Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes

    Institute of Scientific and Technical Information of China (English)

    LI Ya-Ming; HU Wei-Xuan; CHENG Bu-Wen; LIU Zhi; WANG Qi-Ming

    2012-01-01

    Ge-on-Si p-i-n diodes are fabricated by using two-step Ge film epitaxial technology on Si substrates.A remarkable Franz-Keldysh effect is observed in the wavelength range of 1620-1640nm with a largest Δα/α of 2.8 at 1640nm by optical responsivity measurement.The remarkable change of absorption coefficient in the considerable large wavelength range makes Ge-on-silicon a promising candidate for Si-based electro-absorption modulators. The initial design predicts a modulator of bandwidth ~50 GHz,and the extinction ratio > 7dB by the measured parameter.

  3. Extensive testing of Schottky CdTe detectors for the ECLAIRs X-Gamma-ray Camera on board the SVOM mission

    OpenAIRE

    Nadege, Remoue; Didier, Barret; Olivier, Godet; Pierre, Mandrou

    2010-01-01

    We report on an on-going test campaign of more than 5000 Schottky CdTe detectors (4x4x1 mm^3), over a sample of twelve thousands, provided by Acrorad Co., Ltd (Japan). 6400 of these detectors will be used to build the detection plane of the ECLAIRs camera on the Chinese-French gamma-ray burst mission SVOM. These tests are mandatory to fulfill the prime requirement of ECLAIRs to detect gamma-ray burst photons down to 4 keV. The detectors will be operated at -20C under a reverse bias of 600 V. ...

  4. Characterization of high-resistivity CdTe and Cd0.9Zn0.1Te crystals grown by Bridgman method for radiation detector applications

    Science.gov (United States)

    Mandal, Krishna C.; Krishna, Ramesh M.; Pak, Rahmi O.; Mannan, Mohammad A.

    2014-09-01

    CdTe and Cd0.9Zn0.1Te (CZT) crystals have been studied extensively for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from zone refined ultra-pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled, and optimized by a computer simulation and modeling program developed in our laboratory. The grown crystals were thoroughly characterized after cutting wafers from the ingots and processed by chemo-mechanical polishing (CMP). The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ~10 μm for CdTe and ~8 μm for CZT crystal. The etch pit density was ≤ 5×104 cm-2 for CdTe and ≤ 3×104 cm-2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ~ 1.5×1010 Ω-cm for CdTe and 2-5×1011 Ω-cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτe and μτh) showed μτe = 2×10-3 cm2/V (μτh = 8×10-5 cm2/V) and 3-6×10-3 cm2/V (μτh = 4- 6×10-5 cm2/V) for CdTe and CZT, respectively. Detectors in single pixel, Frisch collar, and coplanar grid geometries were fabricated. Detectors in Frisch grid and guard-ring configuration were found to exhibit energy resolution of 1.4% and 2.6 %, respectively, for 662 keV gamma rays. Assessments of the detector performance have been carried out also using 241Am (60 keV) showing energy resolution of 4.2% FWHM.

  5. Research on reverse recovery characteristics of SiGeC p-i-n diodes

    Institute of Scientific and Technical Information of China (English)

    Gao Yong; Liu Jing; Yang Yuan

    2008-01-01

    This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon,compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

  6. Research on reverse recovery characteristics of SiGeC p-i-n diodes

    International Nuclear Information System (INIS)

    This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging

    International Nuclear Information System (INIS)

    Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm3) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy resolution conditions. The spectroscopic response of the system to monochromatic X-ray sources, at both low and high rates, is presented with particular attention to the mitigation of some typical spectral distortions (pile-up, baseline shifts and charge sharing). At a photon counting rate of 520 kcps/pixel, the system exhibits an energy resolution (FWHM at 59.5 keV) of 4.6%, 7.1% and 9% at throughputs of 0.9%, 16% and 82%, respectively. Measurements of Ag-target X-ray spectra also show the ability of the system to perform accurate estimation of the input counting rate up to 1.1 Mcps/pixel. The aim of this work is to point out, beside the appealing properties of CdTe detectors, the benefits of the digital approach in the development of high-performance energy resolved photon counting (ERPC) systems for high flux X-ray imaging

  8. Photon counting X-ray imaging with CdTe pixel detectors based on XPAD2 circuit

    Science.gov (United States)

    Franchi, Romain; Glasser, Francis; Gasse, Adrien; Clemens, Jean-Claude

    2006-07-01

    A semiconductor hybrid pixel detector for photon counting X-ray imaging has been developed and tested under radiation. The sensor is based on recent uniform CdTe single crystal associated with XPAD 2 counting chip via innovative processes of interconnection. The building detector is 1 mm thick, with an area of 1 cm 2 and consists of 600 square pixels cells 330 μm side. The readout chip working in electron collection mode is capable of setting homogeneous threshold with only a dispersion of 730 e -. Maximum noise level has been evaluated around 15 keV. First experiments under X-rays demonstrate a very good efficiency of detection. Moreover, imaging system allows excellent linearity over a large-scale achieving count rate of 3×10 6 photons/s/mm 2. Spectrometric measurements point up the system potential in multi-energies applications by locating and resolving X-rays lines of 241Am and 57Co sources.

  9. Polarisation measurements with a CdTe pixel array detector for Laue hard X-ray focusing telescopes

    CERN Document Server

    Caroli, E; Pisa, A; Stephen, J B; Frontera, F; Castanheira, M T D; Sordo, S; Caroli, Ezio; Silva, Rui M. Curado da; Pisa, Alessandro; Stephen, John B.; Frontera, Filippo; Castanheira, Matilde T. D.; Sordo, Stefano del

    2006-01-01

    Polarimetry is an area of high energy astrophysics which is still relatively unexplored, even though it is recognized that this type of measurement could drastically increase our knowledge of the physics and geometry of high energy sources. For this reason, in the context of the design of a Gamma-Ray Imager based on new hard-X and soft gamma ray focusing optics for the next ESA Cosmic Vision call for proposals (Cosmic Vision 2015-2025), it is important that this capability should be implemented in the principal on-board instrumentation. For the particular case of wide band-pass Laue optics we propose a focal plane based on a thick pixelated CdTe detector operating with high efficiency between 60-600 keV. The high segmentation of this type of detector (1-2 mm pixel size) and the good energy resolution (a few keV FWHM at 500 keV) will allow high sensitivity polarisation measurements (a few % for a 10 mCrab source in 106s) to be performed. We have evaluated the modulation Q factors and minimum detectable polaris...

  10. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Science.gov (United States)

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  11. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    International Nuclear Information System (INIS)

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  12. Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

    CERN Document Server

    Ishikawa, S; Watanabe, S; Uchida, Y; Takeda, S; Takahashi, T; Saito, S; Glesener, L; Buitrago-Casas, J C; Krucker, S; Christe, S

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4-15 keV using the new technique of HXR focusing optics. The focal plane detector requires -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66 at 15 keV for the silicon detectors) and position resolution of 75 um for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 um and almost 100 % efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of about 1 keV (FWHM) and low energy threshold of 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on De...

  13. Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes

    CERN Document Server

    Taylor, J; Hati, A; Nelson, C; Quinlan, F; Joshi, A; Diddams, S

    2011-01-01

    Fluctuations of the optical power incident on a photodiode can be converted into phase fluctuations of the resulting electronic signal due to nonlinear saturation in the semiconductor. This impacts overall timing stability (phase noise) of microwave signals generated from a photodetected optical pulse train. In this paper, we describe and utilize techniques to characterize this conversion of amplitude noise to phase noise for several high-speed (>10 GHz) InGaAs P-I-N photodiodes operated at 900 nm. We focus on the impact of this effect on the photonic generation of low phase noise 10 GHz microwave signals and show that a combination of low laser amplitude noise, appropriate photodiode design, and optimum average photocurrent is required to achieve phase noise at or below -100 dBc/Hz at 1 Hz offset a 10 GHz carrier. In some photodiodes we find specific photocurrents where the power-to-phase conversion factor is observed to go to zero.

  14. Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

    Indian Academy of Sciences (India)

    Habibe Bayhan; Şadan Özden

    2007-04-01

    This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280{330 meV and 1.1 × 1012 - 1.2 × 1012 cm-3, respectively. According to the high-frequency - measurements, the impurity concentrations are determined to be about 5.3 × 1012 and 1.9 × 1013 cm-3 in BPW41 and BPW34, respectively using the method of / (-2) vs. .

  15. Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

    OpenAIRE

    Ishikawa, S.; Katsuragawa, M.; Watanabe, S; Uchida, Y.; Takeda, S; Takahashi, T.; Saito, S.; Glesener, L.; Buitrago-Casas, J. C.; Krucker, S.; Christe, S.

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4-15 keV using the new technique of HXR focusing optics. The focal plane detector requires < 100 um position resolution (to take advantage of the angular resolution of the optics) and about 1 keV energy resolutio...

  16. Material reconstruction with the Medipix2 detector with CdTe sensor

    OpenAIRE

    Guni, Ewald; Durst, J.; Michel, T; Anton, G.

    2013-01-01

    The new generation of photon counting pixelated X-ray detectors like the Medipix2 detector are gaining increasing interest in medical imaging. In contrast to conventional systems which integrate the charge released in the sensor they are able to count single photons. With this imaging detector it is possible to determine the energy of the incoming X-rays which opens up a new field of applications. One application is the detection of contrast agents in medical imaging which was shown for a sil...

  17. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    CERN Document Server

    Zumbiehl, A; Fougeres, P; Koebel, J M; Regal, R; Rit, C; Ayoub, M; Siffert, P

    2001-01-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: af...

  18. CdTe and CdZnTe semiconductor gamma detectors equipped with ohmic contacts

    CERN Document Server

    Lachish, U

    1999-01-01

    Semiconductor gamma detectors, equipped with ohmic contacts, are uniform and fast response devices that are not sensitive to hole trapping. Gamma generated charges flow within the detector bulk towards the ohmic contacts, and induce additional charge flow from the contacts towards them. The additional flow stems from the fundamental principles of Poisson and the continuity equations. Electrons flow from the negative contacts towards the holes and recombine with them, therefore, they overcome hole trapping. The ohmic contact effect transforms the detector into a single carrier device. Good quality ohmic contact detectors are achieved from a crystal grown by standard methods, that initially has too many traps, by adjustment of the Fermi level position within the forbidden band. The device design and its principle of operation are discussed.

  19. Comparison of calculated absolute full-energy peak efficiencies of CdTe and NaI detectors in the photon energy region of 15-2000 keV

    International Nuclear Information System (INIS)

    A comparison of the calculated absolute full-energy peak efficiencies of CdTe and NaI detectors, i.e. the ratio of the number of counts under the full-energy peak (FEP) to the number of photons at the same energy emitted by the source, is made for six different detectors and three source sizes. The CdTe and NaI detectors are assumed to be of equal volume. The calculations are performed in the photon energy region 15-2000 keV using water, muscle and blood as source media. (author)

  20. Model-based pulse shape correction for CdTe detectors

    CERN Document Server

    Bargholtz, C; Maartensson, L

    1999-01-01

    We present a systematic method to improve energy resolution of CdTe-detector systems with full control of the efficiency. Sampled pulses and multiple amplifier data are fitted by a model of the pulse shape including the deposited energy and the interaction point within the detector as parameters. We show the decisive improvements of spectral resolution and photo-peak efficiency that is obtained without distortion of spectral shape. The information concerning the interaction depth of individual events can be used to discriminate between beta particles and gamma quanta. (author)

  1. Model-based pulse shape correction for CdTe detectors

    Science.gov (United States)

    Bargholtz, Chr.; Fumero, E.; Mårtensson, L.

    1999-02-01

    We present a systematic method to improve energy resolution of CdTe-detector systems with full control of the efficiency. Sampled pulses and multiple amplifier data are fitted by a model of the pulse shape including the deposited energy and the interaction point within the detector as parameters. We show the decisive improvements of spectral resolution and photo-peak efficiency that is obtained without distortion of spectral shape. The information concerning the interaction depth of individual events can be used to discriminate between beta particles and gamma quanta.

  2. Gamma spectroscopic measurements using the PID350 pixelated CdTe radiation detector

    CERN Document Server

    Karafasoulis, K; Seferlis, S; Papadakis, I; Loukas, D; Lambropoulos, C; Potiriadis, C

    2010-01-01

    Spectroscopic measurements are presented using the PID350 pixelated gamma radiation detectors. A high-speed data acquisition system has been developed in order to reduce the data loss during the data reading in case of a high flux of photons. A data analysis framework has been developed in order to improve the resolution of the acquired energy spectra, using specific calibration parameters for each PID350's pixel. Three PID350 detectors have been used to construct a stacked prototype system and spectroscopic measurements have been performed in order to test the ability of the prototype to localize radioactive sources.

  3. On the energy response function of a CdTe Medipix2 Hexa detector

    Energy Technology Data Exchange (ETDEWEB)

    Koenig, Thomas, E-mail: t.koenig@dkfz.de [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany); Zwerger, Andreas [Freiburg Materials Research Center (FMF), Stefan-Meier-Strasse 21, 79104 Freiburg (Germany); Zuber, Marcus; Schuenke, Patrick; Nill, Simeon [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany); Guni, Ewald [Erlangen Centre for Astroparticle Physics (ECAP), Erwin-Rommel-Strasse 1, 91058 Erlangen (Germany); Fauler, Alex; Fiederle, Michael [Freiburg Materials Research Center (FMF), Stefan-Meier-Strasse 21, 79104 Freiburg (Germany); Oelfke, Uwe [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany)

    2011-08-21

    X-ray imaging based on photon counting pixel detectors has received increased interest during the past years. Attached to a semiconductor of choice, some of these devices enable to resolve the spectral components of an image. This work presents the results from measuring the energy response function of a Medipix2 MXR Hexa detector, where six individual Medipix detectors were bump bonded to a 1 mm thick cadmium telluride sensor in order to form a 3x2 array of 4.2x2.8 cm{sup 2} size. The average FWHM of the photo peak of an {sup 241}Am source was found to be 2.2 and 2.1 keV for single pixels and bias voltages of 200 and 350 V, respectively, across the whole Hexa detector. This corresponds to a relative energy resolution of less than 4%. Adding up all pixel spectra of individual chips lead to an only small deterioration of energy resolution, with line widths of 2.7 and 2.5 keV. In general, a lower detection efficiency was observed for the lower voltage setting, along with a shift of the peak position towards lower energies.

  4. Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators.

    Science.gov (United States)

    Yoo, Jinkyoung; Nguyen, Binh-Minh; Campbell, Ian H; Dayeh, Shadi A; Schuele, Paul; Evans, David; Picraux, S Tom

    2015-05-26

    High-performance photovoltaic (PV) devices require strong light absorption, low reflection and efficient photogenerated carrier collection for high quantum efficiency. Previous optical studies of vertical wires arrays have revealed that extremely efficient light absorption in the visible wavelengths is achievable. Photovoltaic studies have further advanced the wire approach by employing radial p-n junction architectures to achieve more efficient carrier collection. While radial p-n junction formation and optimized light absorption have independently been considered, PV efficiencies have further opportunities for enhancement by exploiting the radial p-n junction fabrication procedures to form arrays that simultaneously enhance both light absorption and carrier collection efficiency. Here we report a concept of morphology control to improve PV performance, light absorption and quantum efficiency of silicon radial p-i-n junction arrays. Surface energy minimization during vapor phase epitaxy is exploited to form match-head structures at the tips of the wires. The match-head structure acts as a built-in light concentrator and enhances optical absorptance and external quantum efficiencies by 30 to 40%, and PV efficiency under AM 1.5G illumination by 20% compared to cylindrical structures without match-heads. The design rules for these improvements with match-head arrays are systematically studied. This approach of process-enhanced control of three-dimensional Si morphologies provides a fab-compatible way to enhance the PV performance of Si radial p-n junction wire arrays. PMID:25961330

  5. The electrochemical capacitance-voltage characterization of InP based p-i-n structures

    Science.gov (United States)

    Wang, Li-wei; Lu, Yi-dan; Xu, Jin-tong; Li, Xiang-yang

    2013-09-01

    Electrochemical Capacitance-Voltage (EC-V) profiling is currently one of the most often used methods for majority carrier concentration depth profiling of semiconductors. The experiments of EC-V profiling on InP based structures were conducted by Wafer Profiler CVP21, and there are two problems in the experiments of InP based p-i-n structures : a)the experimental results of EC-V profiling of i layer were not in line with the theoretically data after the EC-V profiling of p layer, which can be measured within the error range; b) The measurements of etching depth were not very accurate. In this paper, we made comparative experiments on InP based n-i-n structures, and find out a method to deal with the first problem: firstly etch p layer before EC-V profiling, so we can gain a relatively accurate result of EC-V profiling of i layer. Besides, use back contacts instead of front contacts to do the EC-V profiling according to the instruction book of the Wafer Profiler CVP21. Then the author tried to infer the reason that results in the first problem theoretically. Meanwhile we can calibrate the etching depth through Profile-system and Scanning Probe Microscope (SPM). And there are two possible reasons which result in the second problem: the defects of the semiconductors and the electrolyte we used to etch the semiconductors.

  6. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Science.gov (United States)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-01

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ˜10 W/cm2. Higher values of VOC and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ˜8% and internal quantum efficiency of ˜90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400-650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  7. Optical spectroscopy study of nc-Si-based p-i-n solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Parramon, Jordi; Gracin, Davor; Gajovic, Andreja [Rudjer Boskovic Institute, Bijenicka cesta 54, 10000 Zagreb (Croatia); Modreanu, Mircea [Tyndall Institute, Lee Maltings, Prospect Row, Cork (Ireland)

    2009-10-15

    In the present study we analyzed nanocrystalline silicon (nc-Si)-based p-i-n thin film structures (SiC/nc-Si/n-doped amorphous Si) on glass produced by radio-frequency plasma-enhanced chemical vapor deposition. The crystallinity of the nc-Si layer was modified by varying the deposition conditions ([SiH{sub 4}]/[H{sub 2}] ratio in the plasma and radio-frequency power). Structural properties of the samples (crystalline fraction and crystal size distribution) were inferred by Raman spectroscopy. Different optical spectroscopy methods were combined for the determination of the optical constants in different spectral ranges: spectrophotometry, ellipsometry and photothermal deflection spectroscopy. Characterization results evidence that the optical properties of the nc-Si layers are strongly connected with the layer structural properties. Thus, the correlation between density of defects, Urbach energy, band-gap and line-shape of dielectric function critical points with the crystalline properties of the films is established. (author)

  8. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

    Science.gov (United States)

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  9. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  10. CdTe and CdZnTe detectors in nuclear medicine

    CERN Document Server

    Scheiber, C

    2000-01-01

    Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

  11. Fast photoconductor CdTe detectors for synchrotron x-ray studies

    International Nuclear Information System (INIS)

    The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 μm between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device's response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors

  12. Signal formation and decay in CdTe x-ray detectors under intense irradiation.

    Science.gov (United States)

    Jahnke, A; Matz, R

    1999-01-01

    The response of Cd(Zn)Te Schottky and resistive detectors to intense x-rays is investigated in a commercial computed tomography (CT) system to assess their potential for medical diagnostics. To describe their signal height, responsivity, signal-to-noise ratio (SNR), and detective quantum efficiency the devices are modeled as solid-state ionization chambers with spatially varying electric field and charge collection efficiency. The thicknesses and pixel areas of the discrete detector elements are 0.5-2 mm and a few mm2, respectively. The incident spectrum extends from 26 to 120 keV and comprises 10(10) quanta/s cm2. It photogenerates a carrier concentration in the semiconductor that is two to three orders of magnitude above the intrinsic concentration, but remains to a similar extent below the charge densities on the device electrodes. Stable linear operation is achieved with the Schottky-type devices under high bias. Their behavior can be modeled well if negatively charged near-midgap bulk defects with a concentration of 10(11)-10(13) cm-3 are assumed. The bulk defects explain the amount and time constant (about 100 ms) of the detrapping current measured after x-ray pulses (afterglow). To avoid screening by the trapped space charge the bias voltage should exceed 100(V) x [detector thickness/mm]2. Dark currents are of the order of the generation-recombination current, i.e., 300 pA/mm3 detector volume. With proper device design the signal height approaches the theoretical maximum of 0.2 A/W. This high responsivity, however, is not exploited in CT since the SNR is determined here by the incident quantum noise. As a consequence of the detrapping current, the response speed does not meet CT requirements. A medium-term effort for crystal growth appears necessary to achieve the required reduction of the trap density by an order of magnitude. Scintillation based detectors are, therefore, still preferred in fast operating medical diagnostic systems. PMID:9949396

  13. Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p-i-n Diode

    Science.gov (United States)

    Nakayama, Koji; Sugawara, Yoshitaka; Tsuchida, Hidekazu; Kimura, Chiharu; Aoki, Hidemitsu

    2011-04-01

    4H-SiC p-i-n diodes fabricated on the (0001) C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the (0001) Si-face. These drift phenomena in 4H-SiC p-i-n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on (0001) C-face in comparison with that on (0001) Si-face.

  14. Spectroscopy of low energy solar neutrinos using CdTe detectors

    OpenAIRE

    Zuber, K.

    2002-01-01

    The usage of a large amount of CdTe(CdZnTe) semiconductor detectors for solar neutrino spectroscopy in the low energy region is investigated. Several different coincidence signals can be formed on five different isotopes to measure the Be-7 neutrino line at 862 keV in real-time. The most promising one is the usage of Cd-116 resulting in 89 SNU. The presence of Te-125 permits even the real-time detection of pp-neutrinos. A possible antineutrino flux above 713 keV might be detected by capture o...

  15. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    Science.gov (United States)

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  16. Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells

    DEFF Research Database (Denmark)

    Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher

    2001-01-01

    Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...

  17. Continued Development of Small-Pixel CZT and CdTe Detectors for Future High-Angular-Resolution Hard X-ray Missions

    Science.gov (United States)

    Krawczynski, Henric

    The Nuclear Spectroscopic Telescope Array (NuSTAR) Small Explorer Mission was launched in June 2012 and has demonstrated the technical feasibility and high scientific impact of hard X-ray astronomy. We propose to continue our current R&D program to develop finely pixelated semiconductor detectors and the associated readout electronics for the focal plane of a NuSTAR follow-up mission. The detector-ASIC (Application Specific Integrated Circuit) package will be ideally matched to the new generation of low-cost, low-mass X-ray mirrors which achieve an order of magnitude better angular resolution than the NuSTAR mirrors. As part of this program, the Washington University group will optimize the contacts of 2x2 cm^2 footprint Cadmium Zinc Telluride (CZT) and Cadmium Telluride (CdTe) detectors contacted with 100x116 hexagonal pixels at a next-neighbor pitch of 200 microns. The Brookhaven National Laboratory group will design, fabricate, and test the next generation of the HEXID ASIC matched to the new X-ray mirrors and the detectors, providing a low-power 100x116 channel ASIC with extremely low readout noise (i.e. with a root mean square noise of 13 electrons). The detectors will be tested with radioactive sources and in the focal plane of high-angular-resolution X-ray mirrors at the X-ray beam facilities at the Goddard and Marshall Space Flight Centers.

  18. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen, E-mail: cbw@semi.ac.cn; Wang, Qiming [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup −}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  19. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    International Nuclear Information System (INIS)

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n−-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N+ region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge

  20. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

    Science.gov (United States)

    Zheng, Jun; Wang, Suyuan; Liu, Zhi; Cong, Hui; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2016-01-01

    We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm2 was obtained at a reverse bias of 1 V. A high optical responsivity of the Ge0.94Sn0.06/Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices.

  1. Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction

    International Nuclear Information System (INIS)

    The concentration of excitons generated in a high-quality diamond p-i-n junction is investigated considering the forward current characteristics of the junction. As the forward current in the junction increases, the exciton concentration increases superlinearly, contrary to the linear increases of the electron and hole concentration. This tendency suggests a superlinear increase in emission intensity due to exciton recombination. The increase rate is more radical than quadratic, in accordance with the observed increase of the integrated intensity of free exciton emission. To estimate the concentration of triplet excitons generated in the p-i-n junction, observation of the paramagnetism due to the exciton spin moment is proposed. The magnetic susceptibility superlinearly increases with the increase in the forward current, unlike any other magnetic property of the device

  2. Extensive testing of Schottky CdTe detectors for the ECLAIRs X-Gamma-ray Camera on board the SVOM mission

    CERN Document Server

    Nadege, Remoue; Olivier, Godet; Pierre, Mandrou

    2010-01-01

    We report on an on-going test campaign of more than 5000 Schottky CdTe detectors (4x4x1 mm^3), over a sample of twelve thousands, provided by Acrorad Co., Ltd (Japan). 6400 of these detectors will be used to build the detection plane of the ECLAIRs camera on the Chinese-French gamma-ray burst mission SVOM. These tests are mandatory to fulfill the prime requirement of ECLAIRs to detect gamma-ray burst photons down to 4 keV. The detectors will be operated at -20C under a reverse bias of 600 V. We found that 78% of the detectors already tested could be considered for the flight model. We measured a mean energy resolution of 1.8 keV at 59.6 keV. We investigated the polarization effect first at room temperature and low bias voltage for faster analysis. We found that the spectroscopic degradation in quantum efficiency, gain and energy resolution, starts as soon as the bias is turned on: first slowly and then dramatically after a time t_p which depends on the temperature and the voltage value. Preliminary tests unde...

  3. X-ray Peltier cooled detectors for X-ray fluorescence analysis

    International Nuclear Information System (INIS)

    The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i- n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1) Si(Li) detectors: S = 20 mm2, thickness = 3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S = 100 mm2; thickness = 4.5 mm, 270 eV (5.9 keV), 485 eV (59,6 keV). (2) Si-planar detector: S = 10 mm2, thickness = 0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3) CdTe p-i-n detectors: S = 16 mm2, thickness 0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S = 16 mm2, thickness = 1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, criminalistics and history of art are demonstrated. (author)

  4. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination

    International Nuclear Information System (INIS)

    The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society

  5. Amorphous silicon p-i-n diodes, deposited by the VHF-GD process: new experimental results

    OpenAIRE

    P. Chabloz; Keppner, Herbert; Fischer, Diego; Link, D.; Shah, Arvind

    2008-01-01

    a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect density. At deposition temperatures of 200 to 250°C low stress and a low defect density were obtained for excitation frequencies between 60 and 70 MHz. A second part shows the spectral response of thick p-i-n diodes for different reverse bias vo...

  6. Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy

    OpenAIRE

    E. Siebert-Henze; Lyssenko, V. G.; Fischer, J; M. Tietze; Brueckner, R.; M. Schwarze; Vandewal, K; Ray, D.; M. Riede; Leo, K.

    2014-01-01

    We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroab...

  7. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

    Directory of Open Access Journals (Sweden)

    Sofiane Belahsene

    2015-12-01

    Full Text Available The effect of beta particle irradiation (electron energy 0.54 MeV on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V, capacitance-voltage (C-V and deep-level transient spectroscopy (DLTS measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

  8. Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

    CERN Document Server

    Becker, Julian; Shanks, Katherine S; Philipp, Hugh T; Weiss, Joel T; Purohit, Prafull; Chamberlain, Darol; Ruff, Jacob P C; Gruner, Sol M

    2016-01-01

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods $<$150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/...

  9. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature. PMID:24187382

  10. High-Efficiency P-I-N Microcrystalline and Micromorph Thin Film Silicon Solar Cells Deposited on LPCVD Zno Coated Glass Substrates

    OpenAIRE

    Bailat, Julien; Dominé, Didier; Schlüchter, R.; Steinhauser, Jérôme; Faÿ, Sylvie; F Freitas; Bucher, C.; Feitknecht, Luc; Niquille, Xavier; Tscharner, T.; Shah, Arvind; Ballif, Christophe

    2008-01-01

    The authors report on the fabrication of microcrystalline silicon p-i-n solar cells with efficiencies close to 10%, using glass coated with zinc oxide (ZnO) deposited by low pressure chemical vapor deposition (LPCVD). LPCVD front contacts were optimized for p-i-n microcrystalline silicon solar cells by decreasing the free carrier absorption of the layers and increasing the surface roughness. These modifications resulted in an increased current density of the solar cell but also in significant...

  11. Analytical and equivalent-circuit models based on numerical solutions for amorphous silicon p/i/n solar cells

    Science.gov (United States)

    Misiakos, K.; Lindholm, F. A.

    The authors present contact-to-contact computer solutions of the a-Si:H p/i/n solar cell and uses these to obtain the approximations and insight needed for the development of analytical models. The numerical results allow study of many aspects of internal variables as functions of position, terminal voltage, and phonon flux density. Based on the numerical results, analytical and equivalent-circuit models are proposed which support each other and explain the physical origin of interdependencies among such variables as quantum efficiency, electric field and recombination rate profiles, and their relation to current-voltage characteristics. The concept of the limiting carrier is mathematically treated by separating the current into photocollected and back-injection components. The limiting carrier is the carrier with the least photocollected current.

  12. Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

    Institute of Scientific and Technical Information of China (English)

    Ni Jian; Zhang Jian-Jun; Cao Yu; Wang Xian-Bao; Li Chao; Chen Xin-Liang; Geng Xin-Hua; Zhao Ying

    2011-01-01

    This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 ℃.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.

  13. Optimizing light absorption in a thin-film p-i-n solar cell using a quasi-periodic grating

    Science.gov (United States)

    Atalla, Mahmoud R. M.

    2014-03-01

    A p-i-n solar cell is best suited for strong absorbers with poor collection capabilities. However, the absorption naturally decreases at photon energies close to the electronic bandgap of the semiconductor. We hypothesized that a quasi-periodic surface textures in the role of diffraction gratings at the back contact can efficiently scatter light increasing the optical path length inside the absorber layer. The effect of quasi-periodic corrugated backing metallic contact of various types was studied theoretically. To help optimizing the design of the quasi periodic grating the corresponding canonical problem was considered. The absorption of light was calculated using the rigorous coupled-wave approach. The n- and i-layers consist of isotropic nonhomogeneous multilayered semiconductor.

  14. The effect of embedded nanopillars on the built-in electric field of amorphous silicon p-i-n devices

    Science.gov (United States)

    Kirkpatrick, T.; Simmons, C. B.; Akey, A. J.; Tabet, N.; Buonassisi, T.

    2016-05-01

    In this work, we report on the experimental modification of the built-in electric field of a-Si:H p-i-n junctions, resulting from Ag nanopillars embedded within the intrinsic layer (i-layer). Increased open-circuit voltages, from J-V traces, and reduced charge transit-times, from time-of-flight (ToF) measurements, indicate that the built-in electric field within the i-layer is increased with respect to unstructured reference samples. Decreased short-circuit current density values coupled with competing diode J-V characteristics, however, indicate that the charge collection from the i-layer is significantly decreased for the nanopillar samples. Theoretical and functional analysis of the ToF data reaffirms both reduced charge-transit times and decreased charge collection, and is able to quantitatively confirm the enhanced built-in electric field of the nanopillar samples.

  15. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    International Nuclear Information System (INIS)

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  16. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    International Nuclear Information System (INIS)

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators

  17. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    Science.gov (United States)

    Awan, I. T.; Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-01

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ˜20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ˜-75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  18. Extensive simulation studies on the reconstructed image resolution of a position sensitive detector based on pixelated CdTe crystals

    CERN Document Server

    Zachariadou, K; Kaissas, I; Seferlis, S; Lambropoulos, C; Loukas, D; Potiriadis, C

    2011-01-01

    We present results on the reconstructed image resolution of a position sensitive radiation instrument (COCAE) based on extensive simulation studies. The reconstructed image resolution has been investigated in a wide range of incident photon energies emitted by point-like sources located at different source-to-detector distances on and off the detector's symmetry axis. The ability of the detector to distinguish multiple radioactive sources observed simultaneously is investigating by simulating point-like sources of different energies located on and off the detector's symmetry axis and at different positions

  19. Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Shang, Xiangjun; Yu, Ying; Li, Mifeng; Wang, Lijuan; Zha, Guowei; Ni, Haiqiao; Niu, Zhichuan, E-mail: zcniu@semi.ac.cn [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Pettersson, Håkan [Center for Applied Mathematics and Physics, Halmstad University, P.O. Box 823, S-301 18 Halmstad, Sweden and Solid State Physics/Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund (Sweden); Fu, Ying [Science for Life Laboratory, Department of Applied Physics, Royal Institute of Technology, SE-10691 Stockholm (Sweden)

    2015-12-28

    Quantum dot (QD)-embedded photodiodes have demonstrated great potential for use as detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias- and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities “QD-s/WL” and “WL/GaAs” (WL: wetting layer) indicate dominant tunneling under −0.9 V (trap-assisted tunneling from the top QDs) and dominant thermal escape under −0.2 ∼ 0.5 V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from the QD s-state, dominant tunneling from WL, and enhanced QD charging at >190 K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially near the GaAs bandedge) as the bias and T tune (especially under −0.2 ∼ 0.2 V and at >190 K) can be explained well by the enhanced photoelectron capture in QDs with tunable charging. The dominant spectral profile with no degradation under 0.5 V is due to a saturated electron capture in charged QDs (i.e., charging neutralization). QD level simulation and schematic bandstructures can help one understand these effects.

  20. Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots

    International Nuclear Information System (INIS)

    Quantum dot (QD)-embedded photodiodes have demonstrated great potential for use as detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias- and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities “QD-s/WL” and “WL/GaAs” (WL: wetting layer) indicate dominant tunneling under −0.9 V (trap-assisted tunneling from the top QDs) and dominant thermal escape under −0.2 ∼ 0.5 V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from the QD s-state, dominant tunneling from WL, and enhanced QD charging at >190 K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially near the GaAs bandedge) as the bias and T tune (especially under −0.2 ∼ 0.2 V and at >190 K) can be explained well by the enhanced photoelectron capture in QDs with tunable charging. The dominant spectral profile with no degradation under 0.5 V is due to a saturated electron capture in charged QDs (i.e., charging neutralization). QD level simulation and schematic bandstructures can help one understand these effects

  1. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    Science.gov (United States)

    Accorsi, R.; Autiero, M.; Celentano, L.; Chmeissani, M.; Cozzolino, R.; Curion, A. S.; Frallicciardi, P.; Laccetti, P.; Lanza, R. C.; Lauria, A.; Maiorino, M.; Marotta, M.; Mettivier, G.; Montesi, M. C.; Riccio, P.; Roberti, G.; Russo, P.

    2007-02-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256×256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125I, 27-35 keV, 99mTc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor.

  2. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Accorsi, R. [Department of Radiology, The Children' s Hospital of Philadelphia, Philadelphia, PA (United States); Autiero, M. [Dipartimento di Scienze Fisiche, Universita di Napoli Federico II, Naples (Italy); Celentano, L. [Dipartimento di Scienze Biomorfologiche e Funzionali, Universita di Napoli Federico II, Naples (Italy)] (and others)

    2007-02-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256x256 matrix of 55 {mu}m square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. {sup 125}I, 27-35 keV, {sup 99m}Tc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 {mu}m at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor.

  3. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    International Nuclear Information System (INIS)

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256x256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125I, 27-35 keV, 99mTc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor

  4. Study of the spectrometric performances of monolithic CdZnTe / CdTe gamma ray detectors

    International Nuclear Information System (INIS)

    Pixelated monolithic CdTe/CdZnTe semiconductor gamma ray detectors are brought to replace scintillation detectors for medical applications, notably for single photon emission computed tomography (SPECT). In addition to compactness, they present better spectrometric performances: energy resolution, detection efficiency, and spatial resolution. Moreover, the photons depth of interaction in the crystal can be measured. This work aimed in studying experimentally and by simulation the correlations between anodes pitch, material physic properties (resistivity and electron transport properties), and detectors spectrometric performances. We have compared several methods of measuring the photon interaction depth, and have obtained an energy resolution ranging from 1.7% to 7% at 122 keV, according to material, for 5 mm thick detectors. Charge sharing between adjacent anodes has been studied and a measured data processing is proposed. (author)

  5. Spectroscopic imaging using Ge and CdTe based detector systems for hard x-ray applications.

    OpenAIRE

    Astromskas, Vytautas

    2016-01-01

    Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator det...

  6. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    Science.gov (United States)

    Lee, Youngjin; Lee, Amy Candy; Kim, Hee-Joung

    2016-09-01

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  7. Characterization of CdTe and CdZnTe detectors for gamma-ray imaging applications

    Science.gov (United States)

    Verger, L.; Boitel, M.; Gentet, M. C.; Hamelin, R.; Mestais, C.; Mongellaz, F.; Rustique, J.; Sanchez, G.

    2001-02-01

    CEA-LETI in association with Bicron and Crismatec has been developing solid-state gamma camera technology based on CZT. The project included gamma camera head systems development including front-end electronics with an integrated circuit (ASIC), material growth, and detector fabrication and characterization. One feature of the work is the use of linear correlation between the amplitude and the fast rise time of the signal - which corresponds to the electron transit time in the detector, a development that was reported previously and which allows more than 80% of the 122 keV γ-photons incident on HPBM material to be recovered in a ±6.5% 2D window. In the current work, we summarize other methods to improve CZT detector performance and compare them with the Bi-Parametric Spectrum (BPS) method. The BPS method can also be applied as a diagnositic. BPS curve shapes are shown to vary with electric field, and with electron transport properties, and the correction algorithims are seen to be robust over a range of values. In addition, the technique is found to improve detectors from a variety of sources including some with special electrode geometries. In all cases, the BPS method improves efficiency (>75%) without degrading energy resolution (± 6.5% 2D window) even for a monolithic detector. The method does not overcome bulk inhomogeneity nor noise which comes from low resistivity.

  8. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  9. Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy

    International Nuclear Information System (INIS)

    We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect). For a model system with a bulk heterojunction of BF-DPB and C60, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance

  10. Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy

    Directory of Open Access Journals (Sweden)

    E. Siebert-Henze

    2014-04-01

    Full Text Available We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect. For a model system with a bulk heterojunction of BF-DPB and C60, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance.

  11. Influence of bilayer resist processing on p-i-n OLEDs: towards multicolor photolithographic structuring of organic displays

    Science.gov (United States)

    Krotkus, Simonas; Nehm, Frederik; Janneck, Robby; Kalkura, Shrujan; Zakhidov, Alex A.; Schober, Matthias; Hild, Olaf R.; Kasemann, Daniel; Hofmann, Simone; Leo, Karl; Reineke, Sebastian

    2015-03-01

    Recently, bilayer resist processing combined with development in hydrofluoroether (HFE) solvents has been shown to enable single color structuring of vacuum-deposited state-of-the-art organic light-emitting diodes (OLED). In this work, we focus on further steps required to achieve multicolor structuring of p-i-n OLEDs using a bilayer resist approach. We show that the green phosphorescent OLED stack is undamaged after lift-off in HFEs, which is a necessary step in order to achieve RGB pixel array structured by means of photolithography. Furthermore, we investigate the influence of both, double resist processing on red OLEDs and exposure of the devices to ambient conditions, on the basis of the electrical, optical and lifetime parameters of the devices. Additionally, water vapor transmission rates of single and bilayer system are evaluated with thin Ca film conductance test. We conclude that diffusion of propylene glycol methyl ether acetate (PGMEA) through the fluoropolymer film is the main mechanism behind OLED degradation observed after bilayer processing.

  12. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  13. Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink

    Science.gov (United States)

    Xue, Peng; Fu, Guicui; Zhang, Dong

    2016-07-01

    In this study, a physics-based model for the fast p-i-n diode is proposed. The model is based on the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The physical characteristics of fast diode design concepts such as local lifetime control (LLC), emitter control (EMCON) and deep field stop are taken into account. Based on these fast diode design concepts, the ADE is solved for all injection levels instead of high-level injection only as usually done. The variation of high-level lifetime due to local lifetime control is also included in the solution. With the deep field stop layer taken into consideration, the depletion behavior in the N-base during reverse recovery is redescribed. Some physical effects such as avalanche generation and carrier recombination in the depletion region are also taken into account. To be self contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode and a LLC diode are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.

  14. Visualization and analysis of active dopant distribution in a p-i-n structured amorphous silicon solar cell using scanning nonlinear dielectric microscopy

    OpenAIRE

    Hirose, K.; N. Chinone; Cho, Y.

    2015-01-01

    Scanning nonlinear dielectric microscopy (SNDM) and super-higher-order (SHO-) SNDM were used for dopant profiling analysis of a cross-section of the p-i-n structure of an amorphous silicon solar cell. The p-i-n and zigzag structures of each layer boundary were visualized as carrier polarity and density images on 10-20 nm scale through a SNDM measurement. A capacitance-voltage curve was obtained at each pixel in the scan area through a SHO-SNDM measurement. The obtained SNDM and SHO-SNDM data ...

  15. Dynamic defectoscopy with flat panel and CdTe Timepix X-ray detectors combined with an optical camera

    Czech Academy of Sciences Publication Activity Database

    Vavřík, Daniel; Fauler, A.; Fiederle, M.; Jandejsek, Ivan; Jakůbek, J.; Tureček, D.; Zwerger, A.

    2013-01-01

    Roč. 8, April (2013), C04009. ISSN 1748-0221. [International Workshop on Radiation Imaging Detector s /14./. Figueira da Foz, Coimbra, 01.07.2012-05.07.2012] R&D Projects: GA ČR(CZ) GA103/09/2101 Institutional support: RVO:68378297 Keywords : X-ray digital radiography * fracture mechanics * crack path * X-ray defectoscopy Subject RIV: JM - Building Engineering Impact factor: 1.526, year: 2013 http://iopscience.iop.org/1748-0221/8/04/C04009/

  16. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    Science.gov (United States)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  17. Alternative collimator for CdTe (model XR-100T), when it is used for a direct measurements of radiodiagnostic spectra; Colimador alternativo para um detector de CdTe (modelo XR-100T), usado em medidas diretas de espectros de radiodiagnostico

    Energy Technology Data Exchange (ETDEWEB)

    Soares, C.; Guevara, M.V. Manso; Milian, F. Mas; Garcia, F., E-mail: mvictoria.mansoguevara@gmail.com [Universidade Estadual de Santa Cruz (CPqCTR/UESC), Ilheus, BA (Brazil). Departamento de Ciencias Exatas; Nieto, L. [Universidade Estadual do Sudoeste da Bahia (UESB), Itapetinga, BA (Brazil)

    2014-01-15

    The spectrum simulation is a powerful instrument of great practical and pedagogical usefulness, because it helps to understand the technical and the instrumental limits of parameters in optimized measurements of magnitudes of interest in physics. Monte Carlo models, based on particle and radiation transport, provide easy and flexible tools for simulating complex geometries and materials. Particularly, MCNPX code is used to compare, manipulate, and quantify simulated and measured spectra. The purpose of this work is to use this tool set to estimate the characteristics of a collimation device, avoiding permanent and temporary damages into the diode-pin detector, during direct measurements of the Bremsstrahlung's spectrum, which was generated from diagnosis tubes with medical purpose. The simulations were made with a maximum voltage of 150 kVp, and typical charges used in radiological protocols in the medical area. Also, differential high pulse spectra, simulated and measured with a CdTe Detector, are reported. (author)

  18. Study of correlation between the structural defects and inhomogeneities of CDTE based radiation detectors used for medical imaging

    International Nuclear Information System (INIS)

    In the present Ph.D. thesis, we investigate microstructural defects in a chlorine-doped cadmium telluride crystal (CdTe:Cl), to understand the relationship between defects and performance of CdTe-based radiation detectors. Characterization tools, such as diffraction topography and chemical etching, are used for bulk and surface investigations of the distribution of dislocations. Dislocations are arranged into walls. Most of them appear to cross the whole thickness of the sample. Very good correlation is observed between areas with variations of dark-current and photo-current, and positions of the dislocation walls revealed at the surface of the sample. Then spectroscopic analysis of these defects was performed at low temperatures. It highlighted that dislocation walls induce non-radiative recombination, but it didn't show any Y luminescence usually attributed to dislocations in the literature. Ion Beam Induced Current (IBIC) measurements were used to evaluate the influence of dislocation walls on charge carrier transport properties. This experiment shows that they reduce the mobility-lifetime product of the charge carriers. A very clear correlation was, in fact, established between the distribution of the dislocation network and the linear defects revealed by their lower CIE on the device. (author)

  19. Visualization and analysis of active dopant distribution in a p-i-n structured amorphous silicon solar cell using scanning nonlinear dielectric microscopy

    Directory of Open Access Journals (Sweden)

    K. Hirose

    2015-09-01

    Full Text Available Scanning nonlinear dielectric microscopy (SNDM and super-higher-order (SHO- SNDM were used for dopant profiling analysis of a cross-section of the p-i-n structure of an amorphous silicon solar cell. The p-i-n and zigzag structures of each layer boundary were visualized as carrier polarity and density images on 10-20 nm scale through a SNDM measurement. A capacitance-voltage curve was obtained at each pixel in the scan area through a SHO-SNDM measurement. The obtained SNDM and SHO-SNDM data suggest that the i-layer was not completely intrinsic, but was very-low-density p-type.

  20. Simulation analysis of the effects of defect density on the performance of p-i-n InGaN solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Movla, Hossein [University of Tabriz, Department of Solid State Physics, Faculty of Physics, Tabriz (Iran, Islamic Republic of); University of Tabriz, Azar Aytash Co., Technology Incubator, Tabriz (Iran, Islamic Republic of); Salami, Davood [University of Tabriz, Department of Solid State Physics, Faculty of Physics, Tabriz (Iran, Islamic Republic of); Sadreddini, Seyed Vahid [Islamic Azad University, Young Researchers Club, Tabriz Branch, Tabriz (Iran, Islamic Republic of)

    2012-11-15

    This paper indicated a simulation study to optimizing the p-i-n InGaN homojunction solar cells. From the simulation results, it was found that optimized value of cell thickness is 1.3 {mu}m and a maximum energy conversion about 20 % can be achieved in 10{sup 15} cm{sup -3} defect concentration. It is shown that i-layer quality is a dominant factor in determining the performance of the cell. This result is consistent with the fact that InGaN p-i-n homojunction solar cell with higher densities of defects and dislocations exhibits a lower J{sub sc} and V{sub oc}, and consequently lower efficiency of the cell. Simulation results demonstrated that high-quality InGaN alloy is necessary to fabricate a high performance cell. (orig.)

  1. Rectification in (La,Sr)MnO3/(Ba,Sr)TiO3/(La,Ce)2CuO4 trilayer p-i-n junctions

    International Nuclear Information System (INIS)

    Oxide trilayer p-i-n junctions, with p-type La0.67Sr0.33MnO3 (LSMO) manganite layer and n-type La1.89Ce0.11CuO4 (LCCO) cuperate layer separated by Ba0.7Sr0.3TiO3 (BST) titanite insulator layer, have been deposited in situ and characterized. With the increment of the insulator layer thickness, the I-V characteristic of such p-i-n junctions changes from symmetric to asymmetric, and then to symmetric again, given the highest rectifying performance at the BST layer of about 25 nm thick. The largest asymmetry, defined as the ratio of dI/dV at +2 V and -2 V, respectively, is found >1000. The insulator layer thickness dependency indicates that the transport properties of the p-i-n junctions are dominated by the interplay between the interior fields at the LSMO/BST and BST/LCCO interfaces

  2. Calculation of THz radiation due to coherent polar-phonon oscillations in p i n diode structure at high electric field

    Science.gov (United States)

    Thao, D. N.; Katayama, S.; Khoa, T. D.; Iida, M.

    2004-04-01

    We present a calculation of terahertz (THz) radiation by coherent optical phonons in GaAs p-i-n diode structure under high electric fields. The ultrafast dynamics of photoexcited carriers is simulated by adopting a self-consistent ensemble Monte Carlo method. It is demonstrated that the coherent phonon oscillations emitting the THz radiation are excited resonantly by synchronization between the proper lattice oscillation and ultrafast transient of electronic polarization originating from a drift overshoot within the initial period of lattice vibration.

  3. A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme

    OpenAIRE

    Kim, Moonjung; Cha, Jung-Ho; Shin, Seong-Ho; Jeon, Soo-Kun; Kim, Jaeho; Kwon, Young-Se

    2003-01-01

    New stack-shared layer scheme has been developed to integrate monolithically InP-based heterojunction bipolar transistor (HBT)and p-i-n photodiode.In this layer scheme,a p + -and intrinsic InGaAs layers for a photodiode were stacked on n + -InP emitter layer, which is shared as both emitter contact layer for an HBT and n-type contact layer for a photodiode.The fabricated HBTs demonstrated excellent high-speed characteristics of f T =108 GHz and f max =300 GHz.The photodiode,formed with an und...

  4. Si Waveguide-Integrated Metal-Semiconductor-Metal and p-i-n-Type Ge Photodiodes Using Si-Capping Layer

    Science.gov (United States)

    Fujikata, Junichi; Miura, Makoto; Noguchi, Masataka; Okamoto, Daisuke; Horikawa, Tsuyoshi; Arakawa, Yasuhiko

    2013-04-01

    We studied Si waveguide-integrated metal-semiconductor-metal (MSM) and p-i-n-type Ge photodiodes (Ge-PDs), using a Si-capping layer. As for an MSM Ge-PD, the Schottky barrier height was increased up to 0.44 V by applying a 8-20 nm Si-capping layer, and a very low dark current density of approximately 0.4 nA/µm2 was achieved with a high responsivity of 0.8 A/W. In addition, a small electrode spacing of 1 µm realized high-speed photodetection of 20 Gbps. As for a p-i-n-type Ge-PD, by applying a 10-20 nm Si capping layer, the contact resistance between a metal electrode of Ti/TiN/Al and n+-Si capping layer was successfully reduced to 1×10-5 Ω.cm2. A 45 GHz bandwidth was obtained with a low dark current density of 0.8 nA/µm2. Moreover, a more than 20 GHz bandwidth was achieved with zero-bias voltage. In the case of zero-bias voltage operation, a 3 dB bandwidth was a little affected by input power, which would originate from the photocarrier screening effect on the built-in electric field.

  5. Amorphous silicon solar cells. Comparison of p-i-n and n-i-p structures with zinc-oxide front contact

    International Nuclear Information System (INIS)

    This work compares amorphous silicon solar cells in the p-i-n and n-i-p structure. In both cell structures, sputtered zinc-oxide (ZnO) films were established as front contact. We developed smooth TCO films with high conductivity and high transparency. The required surface texture is achieved by a post deposition wet chemical etching step in diluted HCl. In both cell structures, a contact barrier emerges at the amorphous-p/ZnO interface. In both cases, the negative effects of the barrier on the electrical properties of the solar cell are avoided by the application of highly conductive, microcrystalline p-layers (μc-p), which were developed with the RF as well as the VHF deposition technique. We were able to clearly show that the optimum p-layer structure for a-Si:H solar cells with ZnO front contact is an amorphous/microcrystalline double-layer: The thin μc-p-layer provides a low-ohmic ZnO/p-contact, while an amorphous phase is essential in order to build up a high open-circuit voltage (VOC). The optical optimization led to high quantum efficiencies in both cell types and showed an advantage of the n-i-p structure in the laboratory caused by the possible antireflection design of the front contact in this structure. We confirmed literature reports asserting a drop in the Voc of p-i-n cells when using elevated substrate temperatures during deposition of the i-layer material, while the decrease in Voc for the n-i-p cells simply correlates with the decrease of the band gap of the absorber material. The implementation of the developed materials led to a highly efficient a-Si:H/a-Si:H tandem cell in the p-i-n structure on sputtered ZnO with 9.2% stable efficiency after 900 h of light soaking. The transfer of the achieved results to module production is performed in an joint venture between research and industry. (orig.)

  6. Numerical Simulation of THz Radiation by Coherent LO Phonons in GaAs p-i-n Diodes under High Electric Fields

    Science.gov (United States)

    Thao, D. N.; Katayama, S.; Tomizawa, K.

    2004-11-01

    A numerical simulation of terahertz (THz) radiation by coherent longitudinal optical (LO) phonons in GaAs p-i-n diodes under high electric fields is presented, with emphasis on the important role of a velocity overshoot of free carriers in coherent phonon generation. The dynamics of non-equilibrium photoexcited carriers is simulated by adopting a self-consistent ensemble Monte Carlo method. The explicit comparison of THz signals between calculations and experiments is carried out by taking into account the electronic and ionic accelerations. It is shown that the coherent phonon oscillations emitting the THz radiation are excited resonantly by synchronization between the proper lattice oscillation and ultrafast transients of electronic polarization within the initial period of lattice vibration. The appearance of saturation in THz amplitude due to the coherent phonon above 150 kV/cm as well as a significant phase shift of the oscillatory THz signal is predicted.

  7. Enhanced power conversion efficiency of p-i-n type organic solar cells by employing a p-layer of palladium phthalocyanine

    KAUST Repository

    Kim, Inho

    2010-11-15

    We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three different device structures such as ZnPc/ZnPc:C60/C60, PdPc/PdPc:C60/C60, and PdPc/ZnPc:C60/C60 with varying thickness of mixed interlayers were fabricated by thermal evaporation. The mixed i-layers were deposited by co-evaporation of MPc (M=Zn,Pd) and C60 by 1:1 ratio. PCE of 3.7% was obtained for optimized cells consisting of PdPc/ZnPc:C60/C60, while cells with device structure of ZnPc/ZnPc:C60/C60 showed PCE of 3.2%.

  8. Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    B.M. Omer

    2014-04-01

    Full Text Available AMPS-1D (Analysis of Microelectronic and Photonic Structure simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small.

  9. High-efficiency p-i-n superstrate amorphous Si solar cells on SiO x periodic arrays of three-dimensional microstructure prepared by soft imprinting

    Science.gov (United States)

    Niikura, Chisato; Chowdhury, Amartya; Janthong, Bancha; Sichanugrist, Porponth; Konagai, Makoto

    2016-04-01

    Efficient amorphous Si thin-film solar cells in a p-i-n superstrate configuration with a high initial conversion efficiency of 10.3% were successfully fabricated on periodically three-dimensional (3D) micropatterned SiO x /glass substrates prepared by soft imprinting. Conformal film deposition on a 3D microstructure was realized owing to the shape of our newly designed 3D pattern and the triode plasma-enhanced CVD technique, which enables the selective transport of favorable film precursors to the substrate surface. The nanoscale surface texture of the front transparent conductive oxide layer was found to be crucial for optical confinement, unexceptionally for amorphous Si solar cells on a 3D microstructure, which results in an improved short-circuit current density.

  10. Large Perovskite Grain Growth in Low-Temperature Solution-Processed Planar p-i-n Solar Cells by Sodium Addition.

    Science.gov (United States)

    Bag, Santanu; Durstock, Michael F

    2016-03-01

    Thin-film p-i-n type planar heterojunction perovskite solar cells have the advantage of full low temperature solution processability and can, therefore, be adopted in roll-to-roll production and flexible devices. One of the main challenges with these devices, however, is the ability to finely control the film morphology during the deposition and crystallization of the perovskite layer. Processes suitable for optimization of the perovskite layer film morphology with large grains are highly desirable for reduced recombination of charge carriers. Here, we show how uniform thin films with micron size perovskite grains can be made through the use of a controlled amount of sodium ions in the precursor solution. Large micrometer-size CH3NH3PbI3 perovskite grains are formed during low-temperature thin-film growth by adding sodium ions to the PbI2 precursor solution in a two-step interdiffusion process. By adjusting additive concentration, film morphologies were optimized and the fabricated p-i-n planar perovskite-PCBM solar cells showed improved power conversion efficiences (an average of 3-4% absolute efficiency enhancement) compared to the nonsodium based devices. Overall, the additive enhanced grain growth process helped to reach a high 14.2% solar cell device efficiency with low hysteresis. This method of grain growth is quite general and provides a facile way to fabricate large-grained CH3NH3PbI3 on any arbitrary surface by an all solution-processed route. PMID:26862869

  11. Coal mining applications of CdTe gamma ray sensors

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G.; Tiernan, T.; Waer, P.; Hazlett, T. (Radiation Monitoring Devices, Inc., Watertown, MA (USA))

    1990-01-01

    Cadmium telluride (CdTe) solid-state radiation detectors have been used in the development of instrumentation that improves the efficiency of coal-mining operations by helping to locate coal seams and preventing the mining of high-sulfur coal near the edges of the seam. CdTe detectors were selected for these applications because while they are small and durable, they offer good stopping power, deliver adequate spectral response and operate at low voltage. These CdTe-based instruments have passed the mine-safety standards and are now in operation in the mine. (author).

  12. Coal mining applications of CdTe gamma ray sensors

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) solid-state radiation detectors have been used in the development of instrumentation that improves the efficiency of coal-mining operations by helping to locate coal seams and preventing the mining of high-sulfur coal near the edges of the seam. CdTe detectors were selected for these applications because while they are small and durable, they offer good stopping power, deliver adequate spectral response and operate at low voltage. These CdTe-based instruments have passed the mine-safety standards and are now in operation in the mine. (author)

  13. Solar-blind Al x Ga1- x N ( x > 0.45) p- i- n photodiodes with a polarization- p-doped emitter

    Science.gov (United States)

    Kuznetsova, N. V.; Nechaev, D. V.; Shmidt, N. M.; Karpov, S. Yu.; Rzheutskii, N. V.; Zemlyakov, V. E.; Kaibyshev, V. Kh.; Kazantsev, D. Yu.; Troshkov, S. I.; Egorkin, V. I.; Ber, B. Ya.; Lutsenko, E. V.; Ivanov, S. V.; Jmerik, V. N.

    2016-06-01

    Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm-1 must be set in order to obtain a hole concentration of ~1018 cm-3 (measured by the C- V method) in Al x Ga1- x N:Mg ( x = 0.52-0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm-3. p- i- n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and-5 V, respectively, and exhibited a dark current density of 3.9 × 10-8 A/cm2 at U =-5 V.

  14. Numerical simulation and analysis of the dark and illuminated J-V characteristics of a-Si-H p-i-n diodes

    International Nuclear Information System (INIS)

    Dark and illuminated current-voltage (J-V) characteristics of the hydrogenated amorphous silicon (a-Si:H) p-i-n diode have been simulated by solving numerically the full set of transport equations. The dependence of the dark current on the intrinsic layer (i-layer) thickness and on the measurement temperature is investigated by taking into account the presence of the p/i interface defect states. Good agreement with experimental data is obtained when the p/i interface defect density is increased with increasing i-layer thickness. Further, no appreciable influence was remarked for the i/n interface states on the J-V characteristic, which is in agreement with experimental observations. The numerical simulation also concerned the evaluation of the diode photo-parameters, i.e. the short-circuit current density (Jsc) and the open-circuit voltage (Voc), and reproduced, in a good manner, the light intensity dependence of Jsc and Voc for different i-layer thicknesses

  15. High performance planar p-i-n perovskite solar cells with crown-ether functionalized fullerene and LiF as double cathode buffer layers

    International Nuclear Information System (INIS)

    Double cathode buffer layers (CBLs) composed of fullerene derivative functionalized with a crown-ether end group in its side chain (denoted as PCBC) and a LiF layer were introduced between the PCBM acceptor layer and the top cathode in planar p-i-n perovskite solar cells (pero-SCs) based on CH3NH3PbI3−XClX. The devices with the PCBC/LiF double CBLs showed significant improvements in power conversion efficiency (PCE) and long-term stability when compared to the device with LiF single CBL. Through optimizing the spin-coating speed of PCBC, a maximum PCE of 15.53% has been achieved, which is approximately 15% higher than that of the device with single LiF CBL. The remarkable improvement in PCE can be attributed to the formation of a better ohmic contact in the CBL between PCBC and LiF/Al electrode arising from the dipole moment of PCBC, leading to the enhanced fill factor and short-circuit current density (Jsc). Besides the PCE, the long-term stability of the devices with PCBC interlayer is also superior to that of the device with LiF single CBL, which is due to the more effective protection for the perovskite/PCBM interface

  16. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  17. Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

    Directory of Open Access Journals (Sweden)

    Sunhwa Lee

    2012-01-01

    Full Text Available We investigated p-i-n type amorphous silicon (a-Si solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number of boron atoms in the p layer. p-type layer and p/i interface properties were obtained from the X-ray photoelectron spectroscopy (XPS and impedance spectroscopy. One of the solar cells shows open circuit voltage (oc=880 mV, short circuit current density (sc=14.21 mA/cm2, fill factor (FF=72.03%, and efficiency (=8.8% while the p-type layer was doped with 0.1%. The impedance spectroscopic measurement showed that the diode ideality factor and built-in potential changed with change in diborane flow rate.

  18. High performance planar p-i-n perovskite solar cells with crown-ether functionalized fullerene and LiF as double cathode buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaodong; Zhou, Yi, E-mail: yizhou@suda.edu.cn, E-mail: songbo@suda.edu.cn, E-mail: liyf@iccas.ac.cn; Song, Bo, E-mail: yizhou@suda.edu.cn, E-mail: songbo@suda.edu.cn, E-mail: liyf@iccas.ac.cn [Laboratory of Advanced Optoelectronic Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123 (China); Lei, Ming [Department of Chemistry, Zhejiang University, Hangzhou 310027 (China); Li, Yongfang, E-mail: yizhou@suda.edu.cn, E-mail: songbo@suda.edu.cn, E-mail: liyf@iccas.ac.cn [Laboratory of Advanced Optoelectronic Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123 (China); Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-08-10

    Double cathode buffer layers (CBLs) composed of fullerene derivative functionalized with a crown-ether end group in its side chain (denoted as PCBC) and a LiF layer were introduced between the PCBM acceptor layer and the top cathode in planar p-i-n perovskite solar cells (pero-SCs) based on CH{sub 3}NH{sub 3}PbI{sub 3−X}Cl{sub X}. The devices with the PCBC/LiF double CBLs showed significant improvements in power conversion efficiency (PCE) and long-term stability when compared to the device with LiF single CBL. Through optimizing the spin-coating speed of PCBC, a maximum PCE of 15.53% has been achieved, which is approximately 15% higher than that of the device with single LiF CBL. The remarkable improvement in PCE can be attributed to the formation of a better ohmic contact in the CBL between PCBC and LiF/Al electrode arising from the dipole moment of PCBC, leading to the enhanced fill factor and short-circuit current density (J{sub sc}). Besides the PCE, the long-term stability of the devices with PCBC interlayer is also superior to that of the device with LiF single CBL, which is due to the more effective protection for the perovskite/PCBM interface.

  19. Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p-i-n solar cell

    Science.gov (United States)

    Ayat, L.; Bouhdjar, A. F.; Meftah, AF.; Sengouga, N.

    2015-07-01

    Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer (i-layer). We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.

  20. Dependence on the incident light power of the internal electric fields in a GaAs p-i-n solar cell according to bright photoreflectance spectroscopy

    Science.gov (United States)

    Jo, Hyun-Jun; Mun, Young Hee; Kim, Jong Su; Lee, Sang Jun

    2016-07-01

    Bright photoreflectance (BPR) spectroscopy at room temperature is used to examine the internal electric fields in a GaAs p-i-n solar cell for their dependence on the incident light power. Electric fields are observed at 30 µW and 100 µW of incident light. With increasing power, the strengths of the two electric fields are reduced due to the photovoltage effect. The electric field observed at 30 µW is assigned to the p-i interface, which is close to the surface. The other electric field is due to the i-n interface because the incident light penetrates deeper as the light power is increased. The electric field strength of 35.6 kV/cm at the p-i interface is lower than that of 42.9 kV/cm at the i-n interface at 500 µW of light power because the photovoltage effect is proportional to the number of photo-generated carriers, which is reduced as the distance from the surface increases. When the incident light power is similar to the excitation beam power, the electric fields at the p-i interface are saturated.

  1. Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device.

    Science.gov (United States)

    Della Corte, Francesco G; Rao, Sandro; Coppola, Giuseppe; Summonte, Caterina

    2011-02-14

    Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 μm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the V(π)⋅L(π) product was determined to be 63 V⋅cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide 
(a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was 170°C, which ensured the desired technological compatibility with CMOS processes. PMID:21369117

  2. A comparison of various strategies to equalize the lower energy thresholds of a CdTe Medipix2 hexa detector for X-ray imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Koenig, T; Zuber, M; Schuenke, P; Nill, S; Oelfke, U [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany); Zwerger, A; Fauler, A; Fiederle, M, E-mail: t.koenig@dkfz.de [Freiburg Materials Research Center (FMF), Stefan-Meier-Strasse 21, 79104 Freiburg (Germany)

    2011-01-15

    Technological advances have made possible the development of pixelized photon counting semiconductor detectors, many of which are used in X-ray imaging to resolve the spectral composition of the incident photons. Here, in a so-called Hexa detector, we employ a 3 x 2 array of Medipix2 MXR readout chips, bump bonded to a cadmium telluride sensor of 1 mm thickness with a pixel pitch of 165 {mu}m. Each pixel in this assembly offers two variable energy thresholds, which enables counting of only those photons within an energy range of interest. As manufacturing tolerances cause deviations in each of the pixel's responses, the two thresholds can be calibrated for every pixel to render their response to radiation more homogeneous. In this work, we compare various methods that we chose to equalize the lower thresholds: a) the noise edge of the detector electronics, the characteristic X-rays from b) silver and c) tantalum foils as well as flat fields obtained at d) 40 and e) 120 kVp. It will be shown that the energy dependence in the resulting adjustment bit maps are only small, whereas the question as to which strategy to choose (peak position vs. image homogeneity) will have a greater influence on the resulting corrections. Additionally, we observed a decrease in the mean adjustment values with increasing distance from the central axis of the Hexa detector under study.

  3. In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

    Science.gov (United States)

    Wang, Wei; Vajandar, Saumitra; Lim, Sin Leng; Dong, Yuan; D'Costa, Vijay Richard; Osipowicz, Thomas; Tok, Eng Soon; Yeo, Yee-Chia

    2016-04-01

    The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge1-xSnx) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ˜3.2 × 1020 cm-3 can be realized for Ge1-xSnx. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge1-xSnx were investigated. High crystalline quality Ge0.915Sn0.085 can be realized with an active Ga concentration of up to ˜1.2 × 1020 cm-3. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge1-xSnx decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 1020 cm-3, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge0.915Sn0.085 epitaxy was integrated in a Ge0.915Sn0.085-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge0.915Sn0.085/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 104 and a low reverse current (dark current) of 0.24 μA were achieved at Vbias = -1 V.

  4. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  5. Developments of gamma-ray imagers using CdTe semiconductors based on the analog ASIC technology

    International Nuclear Information System (INIS)

    Cadmium Telluride (CdTe) is one of the most promising semiconductor materials for hard X-ray and gamma-ray detection because of the high detection efficiency, and of the good energy resolution. Moreover, CdTe detectors with Schottky junction work as diode detectors, and show superior energy resolution. Based on the CdTe diode devices, we have developed CdTe pixel/strip imagers, and also realized a Si/CdTe Compton camera. These devices will be used for the Hard X-ray Imager (HXI) and the Soft Gamma-ray Detector (SGD) onboard ASTRO-H X-ray satellite to be launched in 2015. These developments are briefly reported in this article. We also describe our recent development of low-noise analog readout ASICs to be used for future development of CdTe gamma-ray imagers. (author)

  6. Solid-state cadmium telluride radiation detector

    International Nuclear Information System (INIS)

    The growth of CdTe single crystal and its application to CdTe detector array was studied for X-ray computed tomography (XCT) equipment. A p-type CdTe single crystal with 104 ohm.cm specific resistivity was grown in a quartz ampoule under vapor pressure control of Cd in a vertical Bridgman furnace. An 18-element detector array was fabricated with this single crystal. The detector was operated with no bias and the sensitivity was confirmed to be between 2.8 x 10-12 and 14 x 10-12 A.h/(R.mm2). Commercial CdTe single crystal was used to manufacture as 560-element detector array for XCT. Results show that CdTe detector is sensitive, linear and has high resolution. (author)

  7. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

    Science.gov (United States)

    Hahn, C.; Weber, G.; Märtin, R.; Höfer, S.; Kämpfer, T.; Stöhlker, Th.

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  8. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    Science.gov (United States)

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse. PMID:27131653

  9. Simulation of charge transport in pixelated CdTe

    OpenAIRE

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-01-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have op...

  10. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  11. Simulation of charge transport in pixelated CdTe

    International Nuclear Information System (INIS)

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points

  12. Low power, low noise, charge sensitive amplifier in CMOS 0.18 μm technology for the readout of fine pitch pixelated CdTe detector

    International Nuclear Information System (INIS)

    Our group is currently developing a new project dedicated to the design of new Cd(Zn)Te spectro-imaging systems for future space borne astrophysics missions. The main goal is to build a spectro-imaging system with matrix ASIC hybridized to pixelated Cd(Zn)Te detector with typical pixel of 300 μm pitch and typical energy resolution of 0.5 keV at 60 keV. Before designing a complete matrix of readout channels, we designed a prototype ASIC to evaluate the microelectronic technology in terms of noise and tolerance to radiation. We designed an ASIC in the standard AMS 0.18 μm CMOS technology dedicated to the readout of very low capacitance (≤1 pF) and very low dark current (≤5 pA) Cd(Zn)Te detectors. The Caterpylar AMS is a set of 30 low noise low power Charge Sensitive Amplifiers (CSAs). All the CSAs have the same folded cascade architecture, only the type (PMOS or NMOS) and the geometry of the input transistors differ between CSAs. The noise performances of the technology are very good since a minimal ENC of 9 e(-)rms has been measured with power consumption in the CSA of 12 μW only. Influence of the W/L ratio and W * L product of input transistor on noise has been measured and discussed. We connected one of the CSA to a silicon diode and measured an energy resolution of 580 eV FWHM at 122 keV with a 57Co source and of 470 eV FWHM at 59.5 keV with a 241Am source. (authors)

  13. Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) is one of the best candidate direct conversion material for medical X-ray application because it satisfies the requirements of direct conversion x-ray material such as high atomic absorption, density, bandgap energy, work fuction, and resistivity. With such properties, single crystal CdTe exhibits high quantum efficiency and charge collection efficiency. However, for the development of low-cost large area detector, the study of the improvement of polycrystalline CdTe property is desirable. In this study, in order to improve the properties of polycrystalline CdTe, we produced polycrystalline CdTe with different kinds of raw materials, high purity Cd and Te powder compounds and bulk CdTe compound synthesized from single crystal CdTe. The electric properties including resistivity, x-ray sensitivity, and charge transport properties were investigated. As a result, polycrystalline CdTe exhibited simular level of resistivity and x-ray sensitivity to single crystal CdTe. The carrier transport properties of polycrystalline CdTe showed poorer properties than those of single crystal CdTe due to significant charge trapping. However, the polycrystalline CdTe fabricated with bulk CdTe compound synthesized from single crystal CdTe showed better charge transport properties than the polycrystalline CdTe fabricated with CdTe powder compounds. This is suitable for diagnostic x-ray detectors, especially for digital fluoroscopy

  14. PC/FRAM plutonium isotopic analysis of CdTe gamma-ray spectra

    CERN Document Server

    Vo, D T

    2002-01-01

    This paper reports the results of isotopics measurements of plutonium with the new CdTe gamma-ray spectrometer. These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than germanium spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. The complete experimental hardware included the new, commercial, portable CdTe detector and two commercial portable multichannel analyzers. Version 4 of FRAM is the software that performed the isotopics analysis.

  15. PC/FRAM plutonium isotopic analysis of CdTe gamma-ray spectra

    Science.gov (United States)

    Vo, D. T.; Russo, P. A.

    2002-07-01

    This paper reports the results of isotopics measurements of plutonium with the new CdTe gamma-ray spectrometer. These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than germanium spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. The complete experimental hardware included the new, commercial, portable CdTe detector and two commercial portable multichannel analyzers. Version 4 of FRAM is the software that performed the isotopics analysis.

  16. SU-E-T-231: Measurements of Gold Nanoparticle-Mediated Proton Dose Enhancement Due to Particle-Induced X-Ray Emission and Activation Products Using Radiochromic Films and CdTe Detector

    Energy Technology Data Exchange (ETDEWEB)

    Cho, J; Cho, S [Dept. of Radiation Physics, UT MD Anderson Cancer Center, Houston, TX (United States); Manohar, N [Dept. of Radiation Physics, UT MD Anderson Cancer Center, Houston, TX (United States); Medical Physics Program, Georgia Institute of Technology, Atlanta, GA (Georgia); Krishnan, S [Dept. of Radiation Oncology, UT MD Anderson Cancer Center, Houston, TX (United States)

    2014-06-01

    Purpose: There have been several reports of enhanced cell-killing and tumor regression when tumor cells and mouse tumors were loaded with gold nanoparticles (GNPs) prior to proton irradiation. While particle-induced xray emission (PIXE), Auger electrons, secondary electrons, free radicals, and biological effects have been suggested as potential mechanisms responsible for the observed GNP-mediated dose enhancement/radiosensitization, there is a lack of quantitative analysis regarding the contribution from each mechanism. Here, we report our experimental effort to quantify some of these effects. Methods: 5-cm-long cylindrical plastic vials were filled with 1.8 mL of either water or water mixed with cylindrical GNPs at the same gold concentration (0.3 mg Au/g) as used in previous animal studies. A piece of EBT2 radiochromic film (30-µm active-layer sandwiched between 80/175-µm outer-layers) was inserted along the long axis of each vial and used to measure dose enhancement due to PIXE from GNPs. Vials were placed at center-of-modulation (COM) and 3-cm up-/down-stream from COM and irradiated with 5 different doses (2–10 Gy) using 10-cm-SOBP 160-MeV protons. After irradiation, films were cleaned and read to determine the delivered dose. A vial containing spherical GNPs (20 mg Au/g) was also irradiated, and gamma-rays from activation products were measured using a cadmium-telluride (CdTe) detector. Results: Film measurements showed no significant dose enhancement beyond the experimental uncertainty (∼2%). There was a detectable activation product from GNPs, but it appeared to contribute to dose enhancement minimally (<0.01%). Conclusion: Considering the composition of EBT2 film, it can be inferred that gold characteristic x-rays from PIXE and their secondary electrons make insignificant contribution to dose enhancement. The current investigation also suggests negligible dose enhancement due to activation products. Thus, previously-reported GNP-mediated proton dose

  17. Edge effects in a small pixel CdTe for X-ray imaging

    OpenAIRE

    Duarte, DD; Bell, SJ; Lipp, J; Schneider, A.; Seller, P; Veale, MC; Wilson, MD; Baker, MA; Sellin, PJ; Kachkanov, V.; Sawhney, KJS

    2013-01-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80×80 pixels on a 250 µm pitch. Historically, these detectors have included a 200 µm wide guard band around the pixelated anode to reduc...

  18. Applications of CdTe to nuclear medicine. Annual report, February 1, 1977--January 31, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G.

    1978-01-01

    The development of CdTe has now progressed to the point where a wide variety of prototype medical applications are being explored. It appears that as the more dramatic applications such as the camera became widely known, expanded interest will be developed for the more mundane but medically still useful areas of medicine such as probes and small arrays. The basic limitation to the increased use of CdTe in medicine remains an economic one as all applications must bear a heavy cost of fundatmental CdTe crystal and device research. A second problem is the fact that the existence of CdTe detectors is not known to most medical researches. This latter problem is being successfully addressed by this contract.

  19. Fabrication of detectors and transistors on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 k..cap omega../center dot/cm<100> silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs.

  20. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  1. High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy

    International Nuclear Information System (INIS)

    We report a significant improvement of the spectral properties of cadmium telluride (CdTe) detectors, fabricated in the form of a Schottky CdTe diode. With the use of high quality CdTe wafer, we formed a Schottky junction by evaporating indium on the Te-face and operated the detector as a diode. This allows us to apply much higher bias voltage than was possible with the previous CdTe detectors. A 2 mmx2 mm detector of thickness 0.5 mm, when operated at a temperature of 5 deg. C, shows leakage current of only 0.2 and 0.4 nA for an operating voltage of 400 and 800 V, respectively. We found that, at a high-electric field of several kV cm-1, the Schottky CdTe diode has very good energy resolution and stability, suitable for astronomical applications. The broad low-energy tail, often observed in CdTe detectors due to the low mobility and short lifetime of holes, was significantly reduced by the application of a higher bias voltage which improves the charge collection efficiency. We achieved very good FWHM energy resolution of 1.1% and 0.8% at energies 122 and 511 keV, respectively, without any rise time discrimination or pulse height correction electronics. For the detection of hard X-rays and gamma-rays above 100 keV, we have improved the detection efficiency by stacking a number of thin CdTe diodes. Using individual readout electronics for each layer, we obtained high detection efficiency without sacrificing the energy resolution. In this paper, we report the performance of the new CdTe diode and discuss its proposed applications in future hard X-ray and gamma-ray astronomy missions

  2. High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy

    Science.gov (United States)

    Takahashi, T.; Paul, B.; Hirose, K.; Matsumoto, C.; Ohno, R.; Ozaki, T.; Mori, K.; Tomita, Y.

    1999-10-01

    We report a significant improvement of the spectral properties of cadmium telluride (CdTe) detectors, fabricated in the form of a Schottky CdTe diode. With the use of high quality CdTe wafer, we formed a Schottky junction by evaporating indium on the Te-face and operated the detector as a diode. This allows us to apply much higher bias voltage than was possible with the previous CdTe detectors. A /2 mm/×2 mm detector of thickness 0.5 mm, when operated at a temperature of /5°C, shows leakage current of only 0.2 and 0.4 nA for an operating voltage of 400 and 800 V, respectively. We found that, at a high-electric field of several kV cm-1, the Schottky CdTe diode has very good energy resolution and stability, suitable for astronomical applications. The broad low-energy tail, often observed in CdTe detectors due to the low mobility and short lifetime of holes, was significantly reduced by the application of a higher bias voltage which improves the charge collection efficiency. We achieved very good FWHM energy resolution of /1.1% and /0.8% at energies 122 and 511 keV, respectively, without any rise time discrimination or pulse height correction electronics. For the detection of hard X-rays and gamma-rays above 100 keV, we have improved the detection efficiency by stacking a number of thin CdTe diodes. Using individual readout electronics for each layer, we obtained high detection efficiency without sacrificing the energy resolution. In this paper, we report the performance of the new CdTe diode and discuss its proposed applications in future hard X-ray and gamma-ray astronomy missions.

  3. Improved organic p-i-n type solar cells with n-doped fluorinated hexaazatrinaphthylene derivatives HATNA-F6 and HATNA-F12 as transparent electron transport material

    International Nuclear Information System (INIS)

    We study new electron transport materials (ETM) to replace the reference material C60 in p-i-n type organic solar cells. A comprehensive material characterization is performed on two fluorinated hexaazatrinaphthylene derivatives, HATNA-F6 and HATNA-F12, to identify the most promising material for the application in devices. We find that both HATNA derivatives are equally able to substitute C60 as ETM as they exhibit large optical energy gaps, low surface roughness, and sufficiently high electron mobilities. Furthermore, large electron conductivities of 3.5×10−5 S/cm and 2.0×10−4 S/cm are achieved by n-doping with 4 wt. % W2(hpp)4. HOMO levels of (7.72 ± 0.05) eV and (7.73 ± 0.05) eV are measured by ultraviolet photoelectron spectroscopy and subsequently used for estimating LUMO values of (4.2 ± 0.8) eV and (4.3 ± 0.8) eV. Both fluorinated HATNA derivatives are successfully applied in p-i-n type solar cells. Compared to identical reference devices comprising the standard material C60, the power conversion efficiency (PCE) can be increased from 2.1 % to 2.4 % by using the new fluorinated HATNA derivatives

  4. Simulation of p-i-n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 μm

    International Nuclear Information System (INIS)

    Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of many device characteristics. Such computations have been used for the study of SiGe/Si multiple quantum wells (MQWs) based infrared photodetectors operating in the two low absorption windows of silica fibers, e.g. around λ = 1.3 and λ = 1.55 μm. In this paper, a versatile model is proposed for the design optimization of SiGe/Si MQWs based photodetectors. It is based on the coupled Schroedinger-Poisson equations that allow the determination of the energy quantization levels and the wave functions of charge carriers. The optimum parameters such as the layers thickness, compositions and doping of the relative MQWs based p-i-n photodetectors under an external applied electric field are determined for the aimed range of wavelength

  5. Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036/Ge multiple quantum wells by quantum modelling

    International Nuclear Information System (INIS)

    GeSn/Ge p-i-n photodetectors with practical Ge0.964Sn0.036 active layers are theoretically investigated. First, we calculated the electronic band parameters for the heterointerfaces between strained Ge1−xSnx and relaxed (001)-oriented Ge. The carrier transport in a p-i-n photodiode built on a ten-period Ge0.964Sn0.036/Ge multiple quantum well absorber was then analyzed and numerically simulated within the Tsu−Esaki formalism by self-consistently solving the Schrödinger and Poisson equations, coupled to the kinetic rate equations. Photodetection up to a 2.1 μm cut-off wavelength is achieved. High responsivities of 0.62 A W−1 and 0.71 A W−1 were obtained under a reverse bias voltage of −3 V at peak wavelengths of 1550 nm and 1781 nm, respectively. Even for this low Sn-fraction, it is found that the photodetector quantum efficiency (49%@1.55 μm) is higher than those of comparable pure-Ge devices at room temperature. Detectivity of 3.8 × 1010 cm Hz1/2 W−1 and 7.9 × 1010 cm Hz1/2 W−1 at −1 V and −0.5 V, respectively, is achievable at room temperature for a 1550 nm wavelength peak of responsivity. This work represents a step forward in developing GeSn/Ge based infrared photodetectors. (paper)

  6. Improved organic p-i-n type solar cells with n-doped fluorinated hexaazatrinaphthylene derivatives HATNA-F{sub 6} and HATNA-F{sub 12} as transparent electron transport material

    Energy Technology Data Exchange (ETDEWEB)

    Selzer, Franz, E-mail: franz.selzer@iapp.de; Falkenberg, Christiane, E-mail: Christiane.Falkenberg@heliatek.com; Leo, Karl, E-mail: karl.leo@iapp.de; Riede, Moritz, E-mail: moritz.riede@physics.ox.ac.uk [Institut für Angewandte Photophysik (IAPP), Technische Universität Dresden, D-01062 Dresden (Germany); Hamburger, Manuel, E-mail: M.Hamburger@oci.uni-heidelberg.de; Baumgarten, Martin, E-mail: baumgart@mpip-mainz.mpg.de; Müllen, Klaus, E-mail: muellen@mpip-mainz.mpg.de [Max Planck Institute for Polymer Research (MPIP), D-55128 Mainz (Germany)

    2014-02-07

    We study new electron transport materials (ETM) to replace the reference material C{sub 60} in p-i-n type organic solar cells. A comprehensive material characterization is performed on two fluorinated hexaazatrinaphthylene derivatives, HATNA-F{sub 6} and HATNA-F{sub 12}, to identify the most promising material for the application in devices. We find that both HATNA derivatives are equally able to substitute C{sub 60} as ETM as they exhibit large optical energy gaps, low surface roughness, and sufficiently high electron mobilities. Furthermore, large electron conductivities of 3.5×10{sup −5} S/cm and 2.0×10{sup −4} S/cm are achieved by n-doping with 4 wt. % W{sub 2}(hpp){sub 4}. HOMO levels of (7.72 ± 0.05) eV and (7.73 ± 0.05) eV are measured by ultraviolet photoelectron spectroscopy and subsequently used for estimating LUMO values of (4.2 ± 0.8) eV and (4.3 ± 0.8) eV. Both fluorinated HATNA derivatives are successfully applied in p-i-n type solar cells. Compared to identical reference devices comprising the standard material C{sub 60}, the power conversion efficiency (PCE) can be increased from 2.1 % to 2.4 % by using the new fluorinated HATNA derivatives.

  7. APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE

    Energy Technology Data Exchange (ETDEWEB)

    Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

    2001-01-01

    A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

  8. Patterning thick diffused junctions on CdTe

    CERN Document Server

    Kalliopuska, Juha; Sipilä, Heikki; Andersson, Hans; Vähänen, Sami; Eränen, Simo; Tlustos, Lukas

    2009-01-01

    Dividing the detector crystal into discrete pixels enables making an imaging detector, in which the charge collected by each pixel can be read separately. Even if the detector is not meant for imaging, patterns on the crystal surface may be used as guard structures that control and limit the flow of charges in the crystal. This has been exceedingly hard for the detector crystals having thick diffused layers. The paper reports a patterning method of the thick diffused junctions on CdTe. The patterning method of In-diffused pn-junction on CdTe chip is demonstrated by using a diamond blade. The patterning is done by removing material from the pn-junction side of the chip, so that the trenches penetrate the diffused layer. As the trenches extend deeper into the bulk than the junction, the regions separated by the trench are electrically isolated. Electrical characterization results are reported for the strips separated by trenches with various depths. The strip isolation is clearly seen in both measured leakage c...

  9. CdTe devices and method of manufacturing same

    Science.gov (United States)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  10. Contribution to the manufacture of silicon semiconductor detectors

    International Nuclear Information System (INIS)

    Production methods used for making silicon semi-conductor detectors at the Nuclear Physics Laboratory in Grenoble are described. Detectors are of two types, either the lithium-compensated p.i.n. type up to 3.5 mm thick, or the surface barrier type from 2 mm down to 10 μ thick. The research into the surface barrier type concerned essentially the resolving power of the chemical contact obtained by Be evaporation (or Ni deposit), after a chemical attack (type C.P.I.) which is thickness-controlled and which gives a low surface current and a satisfactory flatness. The resolving power obtained (α 8.78 MeV, T ≅ - 20 deg. C) is of the order of 20 keV for thick detectors (surface barrier) and ≅ 50 keV for very thin detectors (10 μ), and for p.i.n. type detectors (≅ 50 keV at T + 20 deg. C). (author)

  11. Electrical properties of Schottky diodes based on high-resistance CdTe crystals

    International Nuclear Information System (INIS)

    Measurement of the Schottky barrier height on the CdTe monocrystals alloyed with the Cl, Br, J during the growth process is carried out through the method of chemical transport reactions. Verification of the efficiency of the proposed F(V) function modification with the purpose of determining the Me(In, Sn)-p-CdTe diodes parameters is accomplished. The Schottky barriers with the current transmission diffusion mechanism perspective for developing high-efficiency semiconducting detectors of nuclear radiation are created on the basis of the method for the gas-phase growth of the semiinsulating CdTe monocrystals

  12. High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices

    CERN Document Server

    Watanabe, Shin; Aono, Hiroyuki; Takeda, Shin'ichiro; Odaka, Hirokazu; Kokubun, Motohide; Takahashi, Tadayuki; Nakazawa, Kazuhiro; Tajima, Hiroyasu; Onishi, Mitsunobu; Kuroda, Yoshikatsu

    2008-01-01

    We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was ob...

  13. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    International Nuclear Information System (INIS)

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder

  14. Optimization of an ultra-high-resolution parallel-hole collimator for CdTe semiconductor SPECT system

    International Nuclear Information System (INIS)

    Recently, there has been an increase in the demand for semiconductor detectors in the field of nuclear medicine imaging. The development of semiconductor detectors using materials such as CdTe that allowed for improved spatial resolution greatly advanced the field. However, the pinhole collimator that allows for high spatial resolution compromises the sensitivity due to the small size of the hole. An improvement in both sensitivity and spatial resolution may be achieved by using a pixelated parallel-hole collimator where the hole and pixel sizes are the same. The purpose of this study was to optimize the design of a detector and collimator system to achieve excellent resolution and high sensitivity for a SPECT detector based on a CdTe detector. We performed a simulation study of the PID 350 (Ajat Oy Ltd., Finland) CdTe detector by using a Geant4 Application for Tomographic Emission (GATE). In addition to the above-mentioned pixelated parallel-hole collimator, we also designed a hexagonal parallel-hole collimator with similar hole size, and we evaluated the sensitivity and spatial resolution of each to determine which set-up was optimal for the PID 350 CdTe detector. Our results indicated that the average sensitivity and spatial resolution were 33.48% and 10.97% higher for the pixelated parallel-hole collimator than for the hexagonal parallel-hole collimator, respectively. We resolved a diameter of 0.5 mm in hot-rod phantom images with the pixelated parallel-hole collimator at a distance of 2 cm. Based on our results, we recommend the pixelated parallel-hole collimator for improving the sensitivity and spatial resolution of SPECT systems with CdTe semiconductor detectors.

  15. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    International Nuclear Information System (INIS)

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  16. CdTe quantum dots for an application in the life sciences

    International Nuclear Information System (INIS)

    This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1

  17. Characterization of imaging pixel detectors of Si and CdTe read out with the counting X-ray chip MPEC 2.3; Charakterisierung von bildgebenden Pixeldetektoren aus Si und CdTe ausgelesen mit dem zaehlenden Roentgenchip MPEC 2.3

    Energy Technology Data Exchange (ETDEWEB)

    Loecker, M.

    2007-04-15

    Single photon counting detectors with Si- and CdTe-sensors have been constructed and characterized. As readout chip the MPEC 2.3 is used which consists of 32 x 32 pixels with 200 x 200 {mu}m{sup 2} pixel size and which has a high count rate cabability (1 MHz per pixel) as well as a low noise performance (55 e{sup -}). Measurements and simulations of the detector homogeneity are presented. It could be shown that the theoretical maximum of the homogeneity is reached (quantum limit). By means of the double threshold of the MPEC chip the image contrast can be enhanced which is demonstrated by measurement and simulation. Also, multi-chip-modules consisting of 4 MPEC chips and a single Si- or CdTe-sensor have been constructed and successfully operated. With these modules modulation-transfer-function measurements have been done showing a good spatial resolution of the detectors. In addition, multi-chip-modules according to the Sparse-CMOS concept have been built and tests characterizing the interconnection technologies have been performed.

  18. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  19. Evaluation of CdTe for use in a prototype emission/transmission CT imaging system

    International Nuclear Information System (INIS)

    Cadmium telluride has been investigated for potential use in a prototype imaging system capable of acquiring both x-ray CT and SPECT data. The system is being designed to accumulate SPECT images with 140 keV gamma rays, thus requiring 4 mm detector thicknesses to achieve satisfactory stopping power. This study primarily investigates whether an alternative pixel orientation can be used with thick detectors to preserve the higher photopeak efficiencies normally associated with smaller thicknesses. Using 57Co (122 keV) as a substitute isotope to 99mTc, small 2 mm CdTe cubes were investigated along with edge irradiated 2 x 4 x 2 mm bars of both CdTe and CdZnTe. The photopeak efficiency of the large bars can be increased through the use of cooling but energy resolution remains less than desired. Small cubes of either material meet the resolution requirements, but the efficiency of patient dose would be sacrificed

  20. Dislocation-induced electronic levels in semi-insulated CdTe

    International Nuclear Information System (INIS)

    We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density 5 cm-2). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level EC-0.74 eV in CdTe and Cd1-xZnxTe (x<0.1), the materials of choice in today's detector technology. Our findings demonstrate that dislocation-induced defects can degrade charge collection in radiation detectors.

  1. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  2. Chlorine diffusion in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Sadaiyandi, K.; Ramachandran, K. (School of Physics, Madurai Kamaraj Univ. (India))

    1991-06-01

    The experimental results of chlorine diffusion in CdTe reveal that the dominant mechanism for diffusion is through neutral defect pair such as (V{sub Cd}V{sub Te}){sup *}. Here, theoretical calculations are carried out for all the possible mechanisms such as single vacancy, single interstitial, neutral defect pair, and Frenkel defect pair. The results suggest that the most possible mechanism for Cl diffusion in CdTe is that through neutral defect pair, supporting the experiment. (orig.).

  3. Chemical beam epitaxy of CdTe, HgTe, and HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Benz, R.G. II; Wagner, B.K.; Rajavel, D.; Summers, C.J. (Physical Sciences Lab., Georgia Tech Research Inst., Atlanta, GA (USA))

    1991-05-01

    A chemical beam epitaxy (CBE) system has been implemented for the growth of CdTe, HgTe, and their alloys. The system is briefly described. Results on the cracking of the organometallic source gases are presented. Epitaxial layers have been grown from gas sources of diethylcadmium, diisopropyltelluride and Hg vapor, as well as conventional solid sources. Optical and electrical properties are reported, demonstrating the potential of CBE for growing high quality solar cell and infrared detector material. (orig.).

  4. Optical studies of the internal electric field distributions of CdZnTe detectors under bias conditions

    International Nuclear Information System (INIS)

    The internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energy-band model of a semiconductor junction with a depletion layer was employed to understand the results

  5. Modular multi-element high energy particle detector

    International Nuclear Information System (INIS)

    Multi-element high energy particle detector modules comprise a planar heavy metal carrier of tungsten alloy with planar detector units uniformly distributed over one planar surface. The detector units are secured to the heavy metal carrier by electrically conductive adhesive so that the carrier serves as a common ground. The other surface of each planar detector unit is electrically connected to a feedthrough electrical terminal extending through the carrier for front or rear readout. The feedthrough electrical terminals comprise sockets at one face of the carrier and mating pins projecting from the other face, so that any number of modules may be plugged together to create a stack of modules of any desired number of radiation lengths. The detector units each comprise four, preferably rectangular, p-i-n diode chips arranged around the associated feedthrough terminal to form a square detector unit providing at least 90% detector element coverage of the carrier. Integral spacers projecting from the carriers extend at least partially along the boundaries between detector units to space the p-i-n diode chips from adjacent carriers in a stack. The spacers along the perimeters of the modules are one-half the width of the interior spacers so that when stacks of modules are arranged side by side to form a large array of any size or shape, distribution of the detector units is uniform over the entire array. 5 figs

  6. p-i-n/n-i-p type planar hybrid structure of highly efficient perovskite solar cells towards improved air stability: synthetic strategies and the role of p-type hole transport layer (HTL) and n-type electron transport layer (ETL) metal oxides

    Science.gov (United States)

    Mali, Sawanta S.; Hong, Chang Kook

    2016-05-01

    There has been fast recent progress in perovskite solar cells (PSCs) towards low cost photovoltaic technology. Organometal mixed halide (MAPbX or FAPbX) perovskites are the most promising light absorbing material sandwiched between the electron transport layer (ETL) and hole transport layer (HTL). These two layers play a critical role in boosting the power conversion efficiency (PCE) and maintaining air stability. However, the device stability is a serious issue in regular as well as p-i-n inverted type perovskite solar cells. This mini-review briefly outlines the state-of-art of p-i-n/n-i-p type planar hybrid perovskite solar cells using MAPbX/FAPbX perovskite absorbing layers. Later, we will focus on recent trends, progress and further opportunities in exploring the air stable hybrid planar structure PSCs.

  7. p-i-n/n-i-p type planar hybrid structure of highly efficient perovskite solar cells towards improved air stability: synthetic strategies and the role of p-type hole transport layer (HTL) and n-type electron transport layer (ETL) metal oxides.

    Science.gov (United States)

    Mali, Sawanta S; Hong, Chang Kook

    2016-05-19

    There has been fast recent progress in perovskite solar cells (PSCs) towards low cost photovoltaic technology. Organometal mixed halide (MAPbX or FAPbX) perovskites are the most promising light absorbing material sandwiched between the electron transport layer (ETL) and hole transport layer (HTL). These two layers play a critical role in boosting the power conversion efficiency (PCE) and maintaining air stability. However, the device stability is a serious issue in regular as well as p-i-n inverted type perovskite solar cells. This mini-review briefly outlines the state-of-art of p-i-n/n-i-p type planar hybrid perovskite solar cells using MAPbX/FAPbX perovskite absorbing layers. Later, we will focus on recent trends, progress and further opportunities in exploring the air stable hybrid planar structure PSCs. PMID:27161123

  8. Hard x-ray polarimetry with a thick CdTe position sensitive spectrometer

    Science.gov (United States)

    Caroli, Ezio; Bertuccio, Giuseppe; Cola, Adriano; Curado da Silva, R. M.; Donati, Ariano; Dusi, Waldes; Landini, Gianni; Siffert, Paul; Sampietro, Marco; Stephen, John B.

    2000-12-01

    Even though it is recognized that the study of polarization from cosmic high-energy sources can give very important information about the nature of the emission mechanism, to date very few measurements have been attempted. For several years we have proposed the use of a thick CdTe array as a position sensitive spectrometer for hard X- and soft gamma-ray astronomy, a design which is also efficient for use as a polarimeter at energies above approximately 100 keV. Herein we describe the preliminary results of our study of a polarimeter based on 4096 CdTe microcrystals that we would like to develop for a high altitude balloon experiment. We present the telescope concept with a description of each subsystem together with some results on activities devoted to the optimization of the CdTe detector units' response. Furthermore we give an evaluation of the telescope performance in terms of achievable spectroscopic and polarimetric performance. In particular we will show the results of Monte Carlo simulations developed to evaluate the efficiency of our detector as a hard X ray polarimeter.

  9. Design of a hybrid gas proportional counter with CdTe guard counters for 14C dating system

    International Nuclear Information System (INIS)

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a 14C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller than 24 keV which is low enough for 99.8% anticoincidence efficiency. The experiment showed an anticoincidence efficiency for outer gamma rays from 70% to 80%, similar to that of the old 14C counter. The lost anticoincidence efficiency results from the area of 21.74% which was not covered with CdTe due to two holes for the path of the center anode wire and slots between every two sides of CdTe detectors

  10. Design of a hybrid gas proportional counter with CdTe guard counters for {sup 14}C dating system

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L. E-mail: lan@sophie.q.t.u-tokyo.ac.jp; Takahashi, H.; Hinamoto, N.; Nakazawa, M.; Yoshida, K

    2002-02-01

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a {sup 14}C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller than 24 keV which is low enough for 99.8% anticoincidence efficiency. The experiment showed an anticoincidence efficiency for outer gamma rays from 70% to 80%, similar to that of the old {sup 14}C counter. The lost anticoincidence efficiency results from the area of 21.74% which was not covered with CdTe due to two holes for the path of the center anode wire and slots between every two sides of CdTe detectors.

  11. Medipix2 based CdTe microprobe for dental imaging

    International Nuclear Information System (INIS)

    Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

  12. CdTe quantum dots@luminol as signal amplification system for chrysoidine with chemiluminescence-chitosan/graphene oxide-magnetite-molecularly imprinting sensor

    Science.gov (United States)

    Duan, Huimin; Li, Leilei; Wang, Xiaojiao; Wang, Yanhui; Li, Jianbo; Luo, Chuannan

    2016-01-01

    A sensitive chemiluminescence (CL) sensor based on chemiluminescence resonance energy transfer (CRET) in CdTe quantum dots@luminol (CdTe QDs@luminol) nanomaterials combined with chitosan/graphene oxide-magnetite-molecularly imprinted polymer (Cs/GM-MIP) for sensing chrysoidine was developed. CdTe QDs@luminol was designed to not only amplify the signal of CL but also reduce luminol consumption in the detection of chrysoidine. On the basis of the abundant hydroxy and amino, Cs and graphene oxide were introduced into the GM-MIP to improve the adsorption ability. The adsorption capacities of chrysoidine by both Cs/GM-MIP and non-imprinted polymer (Cs/GM-NIP) were investigated, and the CdTe QDs@luminol and Cs/GM-MIP were characterized by UV-vis, FTIR, SEM and TEM. The proposed sensor can detect chrysoidine within a linear range of 1.0 × 10- 7 - 1.0 × 10- 5 mol/L with a detection limit of 3.2 × 10- 8 mol/L (3δ) due to considerable chemiluminescence signal enhancement of the CdTe quantum dots@luminol detector and the high selectivity of the Cs/GM-MIP system. Under the optimal conditions of CL, the CdTe QDs@luminol-Cs/GM-MIP-CL sensor was used for chrysoidine determination in samples with satisfactory recoveries in the range of 90-107%.

  13. Department of Radiation Detectors - Overview

    International Nuclear Information System (INIS)

    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author)

  14. Photoinduced tellurium precipitation in CdTe

    Science.gov (United States)

    Sugai, Shunji

    1991-06-01

    Tellurium precipitation in CdTe is found to be induced by photoirradiation with energy higher than the energy gap at 240 W/sq cm. It is suggested that this photoinduced precipitation is related with the strong electron-phonon interactions, possibly self-trapped excitons. This irreducible tellurium precipitation may cause a serious problem for the life of semiconductor devices.

  15. Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Ringel, S.A.; Sudharsanan, R. (School of Electrical Engineering, Georgia Inst. of Tech., Atlanta, GA (USA)); Meyers, P.V.; Liu, C.H.; Ramanthan, V. (Ametek Applied Materials Lab., Harleysville, PA (USA))

    1989-10-15

    Polycrystalline thin films of CdZnTe and CdMnTe have been grown by molecular beam epitaxy and metal-organic chemical vapor deposition, respectively, on CdS/SnO{sub 2}/glass substrates, with bandgaps of 1.65-1.75 eV for the top of a two-cell tandem design. P-i-n cells were fabricated and tested using Ni/p{sup +}-ZnTe as a back contact to the ternary films. CdTe cells were also fabricated using both growth techniques, which resulted in 9-10% efficiency and provided a baseline for ternary cell development. It was found that standard CdTe processing (400deg C air annealing) reduces the ternary bandgaps from about 1.7 to about 1.55 eV, resulting in significantly reduced subgap transmission with cell efficiencies of 3-4%. Optimum air-annealing conditions were determined to retain the 1.7 eV bandgaps; however, the cell performance was still limited by both poor CdZnTe/CdS interface quality and high series resistance. The junction interface was found to improve by annealing in the presence of hydrogen, which resulted in V{sub oc} values from 0.500 V to as high as 0.65 V, but the cell performance became increasingly limited by series resistance. The effects of cell processing on the properties of the CdZnTe/CdS interface, the bulk CdZnTe film, and the back-contact region have been investigated to provide guidelines for achieving high efficiency in widegap ternary cells. (orig.).

  16. Approaching cryogenic Ge performance with Peltier-cooled CdTe

    Science.gov (United States)

    Khusainov, Abdurakhman; Iwanczyk, Jan S.; Patt, Bradley E.; Pirogov, Alexandre M.; Vo, Duc T.; Russo, Phyllis A.

    2001-12-01

    A new class of hand-held, portable spectrometers based on large area (1cm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

  17. Cadmium telluride nuclear radiation detectors

    International Nuclear Information System (INIS)

    The characteristics and performance of undoped high resistivity cadmium telluride detectors are compared to chlorine lifted counters. It is shown, in particular, that Undodep CdTe is in fact aluminium doped and that compensation occurs, as an silicon or germanium, by pair and triplet formation between the group III donor and the doubly charged cadmium vacancy acceptor. Furthermore, in chlorine doped samples, the polarization effect results from the unpaired level at Esub(c)-0,6eV

  18. CdTe detector based PIXE mapping of geological samples

    OpenAIRE

    Chaves, P. C.; Taborda, A.; Oliveira, Daniel P. S.; Reis, M. A.

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H+ beam at three different spots. Medium and high Z elemental concentrati...

  19. Characterisation of an electron collecting CdTe strip sensor using the MYTHEN readout chip

    International Nuclear Information System (INIS)

    MYTHEN is a single photon counting hybrid strip X-ray detector that has found application in x-ray powder diffraction (XRPD) experiments at synchrotrons worldwide. Originally designed to operate with hole collecting silicon sensors, MYTHEN is suited for detecting X-rays above 5 keV, however many PD beamlines have been designed for energies above 50 keV where silicon sensors have an efficiency of only few percent. In order to adapt MYTHEN to meet these energies the absorption efficiency of the sensor must be substantially increased. Cadmium-Telluride (CdTe) has an absorption efficiency approximately 30 times that of silicon at 50 keV, and is therefore a very promising replacement candidate for silicon. Furthermore, the large dynamic range of the pre-amplifier of MYTHEN and its double polarity capability has enabled the characterisation of an electron collecting Schottky type CdTe sensor. A CdTe MYTHEN system has undergone a series of characterisation experiments including stress test of bias and radiation induced polarizations. The performance of this system will be presented and discussed

  20. CdTe Films Deposited by Closed-space Sublimation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at substrate temperature higher than 400℃. And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity. Treatment with CdCl2 methanol solution promotes the crystallite growth of CdTe films during annealing.

  1. Synthesis and Surface Modification of CdTe Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    CdTe nanocrystals were prepared in aqueous solution via the reaction between Cd2+ and NaHTe in the presence of mercaptoacetic acid. Interactions between CdTe nanocrystals and phenylalanine were formed via electrostatic/coordinate self-assembly. The photoluminescence intensity of CdTe nanocrystals was improved obviously. The interaction mechanism was discussed and was considered to be surface passivation.

  2. Finite solid angle correction factors and efficiencies for cadmium telluride detectors

    International Nuclear Information System (INIS)

    Finite solid angle correction factors and absolute detection efficiencies of the CdTe detectors of right circular cylindrical geometry for point sources placed on the axis of the detector, has been calculated for γ-ray energies from 100keV to 10MeV, taking into account various source to detector distances, ranging from 1 to 10cm. CdTe detectors of several area between 0.12 and 2.5cm2 of various thickness were considered

  3. Dental x-ray spectrometry with cadmium telluride detectors

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) semiconductor detectors provide high detection efficiency for use in the diagnostic x-rays energy range, due to the high atomic number and density of the crystal. This kind of detector has been utilized in diagnostic x-ray spectroscopy, mainly in the mammography energy range, but only scarce information about its use in dental x-ray beams has been published. In this way, a portable 3x3x1 mm3 CdTe solid state detector (XR-100T CdTe, Amptek, Inc.) with electronic system, tungsten pinhole collimators, alignment device and associated software was utilized in this work. A single-phase dental unit with adjustable kVp and mA was employed and the x-ray spectra were experimentally determined at 50, 60 and 70 kVp with a tube current of 0.5 mA and 1.5mm Al additional filtration. An experimental setup was developed to guarantee a perfect alignment between the detector and the focal spot. The detector to focal spot distance was 3.0 m. Two 2mm thick tungsten pinholes (Amptek EXVC kit) with 0.4 mm and 1.0 mm collimator aperture diameters were positioned close to the detector in order to reduce the pulse pile-up events at high counting rates. A stripping procedure was implemented to correct the pulse height distribution in order to determine the photon spectra. The calculation of the CdTe response, used to correct the measured spectra, was simulated using the GEANT4 Monte Carlo toolkit. The x-ray spectra were compared with the spectra obtained with a high-purity germanium detector (EGP200-13-TR, Eurisys Mesures) with associated electronic devices and software. The reasonable agreement between the results obtained with both detectors shows that CdTe detectors can be successfully utilized for dental x-ray spectrometry. (author)

  4. Comparison of NaI(Tl), CdTe, and HgI2 surgical probes: physical characterization.

    Science.gov (United States)

    Barber, H B; Barrett, H H; Hickernell, T S; Kwo, D P; Woolfenden, J M; Entine, G; Ortale Baccash, C

    1991-01-01

    The physical properties of three surgical probes containing different radiation detectors are compared: a NaI(Tl) scintillator with a flexible, fiber-optic light guide, and two semiconductor detectors that operate at room temperature, CdTe and HgI2. Also compared are spectra, energy resolutions, and counting efficiencies measured at a variety of gamma-ray energies between 30 and 1000 keV. The energy resolution of the NaI probe is substantially poorer than that of either semiconductor probe due in part to light losses in coupling the scintillator to the fiber optics. The semiconductor probes have complex spectral response due to charge-carrier trapping and K x-ray escape, and not all photoelectric interactions in these detectors contribute to the useful part of the photopeak. Above 120 keV the counting efficiency for the NaI probe is an order of magnitude higher than for the CdTe and HgI2 probes. Both energy resolution and counting efficiency are slightly better for the HgI2 probe than for the CdTe probe. PMID:1870478

  5. Photovoltaic minimodule based on CdTe

    International Nuclear Information System (INIS)

    CdS/CdTe solar cells were fabricated without antireflection coatings by successive growth without intermediate processing from the close space sublimation of CdS and CdTe thin layers on conductive and transparent SnO2/glass substrates. At 300 K and 100 mW/cm2 the following best photoelectric parameters were obtained: Isc= (18-19)mA/cm2 and Voc=(0,80-0,82)V. The conversion efficiency is around 10%. The quantum efficiency (QE) in the 510 nm and 845 nm range of wavelengths is on the order of 80-85%. The minimodule fabricated on the basis of the CdTe cells shows power of 0.45 W, corresponding to a voltage of 3 V, and current of 150 mA. (authors)

  6. An evaluation of cadmium telluride detectors for computer assisted tomography.

    Science.gov (United States)

    Chu, D; Kaufman, L; Hosier, K; Hoenninger, J

    1978-11-01

    Cadmium telluride (CdTe) presents a set of extremely attractive features as an X-ray detector for computer assisted tomography (CAT). It is stable and easily handled; has a high detection efficiency and very efficient conversion of energy to charge; and permits a high element density in a compact configuration. Unfortunately, effects due to "polarization," "tailing," high and variable leakage currents, and long "memory" are incompatible with the needs of CAT instrumentation. Pulse-processing techniques have allowed us to eliminate these problems in positive-sensitive detectors, thus opening the way for utilization of CdTe in CAT. PMID:711945

  7. Monte Carlo polarimetric efficiency simulations for a single monolithic CdTe thick matrix

    International Nuclear Information System (INIS)

    Polarimetric measurements for hard X- and soft gamma-rays are still quite unexplored in astrophysical source observations. In order to improve the study of these sources through Compton polarimetry, detectors should have a good polarimetric efficiency and also satisfy the demands of the typical exigent detection environments for this kind of missions. Herein we present a simple concept for such systems, since we propose the use of a single thick (∝10 mm) monolithic matrix of CdTe of 32 x 32 pixels, with an active area of about 40 cm2. In order to predict the best configuration and dimension of detector pixels defined inside the CdTe monolithic piece, a Monte Carlo code based on GEANT4 library modules was developed. Efficiency and polarimetric modulation factor results as a function of energy and detector thickness, are presented and discussed. Q factor of the order of 0.3 has been found up to several hundreds of keV. (orig.)

  8. Monte Carlo polarimetric efficiency simulations for a single monolithic CdTe thick matrix

    Energy Technology Data Exchange (ETDEWEB)

    Curado da Silva, R.M.; Hage-Ali, M.; Siffert, P. [Lab. PHASE, CNRS, Strasbourg (France); Caroli, E.; Stephen, J.B. [Inst. TESRE/CNR, Bologna (Italy)

    2001-07-01

    Polarimetric measurements for hard X- and soft gamma-rays are still quite unexplored in astrophysical source observations. In order to improve the study of these sources through Compton polarimetry, detectors should have a good polarimetric efficiency and also satisfy the demands of the typical exigent detection environments for this kind of missions. Herein we present a simple concept for such systems, since we propose the use of a single thick ({proportional_to}10 mm) monolithic matrix of CdTe of 32 x 32 pixels, with an active area of about 40 cm{sup 2}. In order to predict the best configuration and dimension of detector pixels defined inside the CdTe monolithic piece, a Monte Carlo code based on GEANT4 library modules was developed. Efficiency and polarimetric modulation factor results as a function of energy and detector thickness, are presented and discussed. Q factor of the order of 0.3 has been found up to several hundreds of keV. (orig.)

  9. Recycling of CdTe photovoltaic waste

    Science.gov (United States)

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  10. Thin-film CdTe cells: Reducing the CdTe

    International Nuclear Information System (INIS)

    Polycrystalline thin-film CdTe is currently the dominant thin-film technology in world-wide PV manufacturing. With finite Te resources world-wide, it is appropriate to consider the limits to reducing the thickness of the CdTe layer in these devices. In our laboratory we have emphasized the use of magnetron sputtering for both CdS and CdTe achieving AM1.5 efficiency over 13% on 3 mm soda-lime glass with commercial TCO and 14% on 1 mm aluminosilicate glass. This deposition technique is well suited to good control of very thin layers and yields relatively small grain size which also facilitates high performance with ultra-thin layers. This paper describes our magnetron sputtering studies for fabrication of very thin CdTe cells. Our thinnest cells had CdTe thicknesses of 1 μm, 0.5 μm and 0.3 μm and yielded efficiencies of 12%, 9.7% and 6.8% respectively. With thinner cells Voc, FF and Jsc are reduced. Current-voltage (J-V), temperature dependent J-V (J-V-T) and apparent quantum efficiency (AQE) measurements provide valuable information for understanding and optimizing cell performance. We find that the stability under light soak appears not to depend on CdTe thickness from 2.5 to 0.5 μm. The use of semitransparent back contacts allows the study of bifacial response which is particularly useful in understanding carrier collection in the very thin devices.

  11. Growth of CdTe: Al films

    International Nuclear Information System (INIS)

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  12. 结构参数对p-i-n结构InGaN太阳能电池性能的影响及机理%Influence of structure parameters on the performance of p-i-n InGaN solar cell

    Institute of Scientific and Technical Information of China (English)

    周梅; 赵德刚

    2012-01-01

    The effect of structure parameters on the performance of p-i-n InGaN solar cell is investigated by theoretical calculation. It is found that the short-circuit current decreases while the open-circuit voltage increases with the increase of bandgap of InGaN material. The maximal energy conversion efficiency of p-i-n homojunction InGaN solar cell can be obtained when the bandgap of InGaN is around 1.5 eV. It is also found that the energy conversion efficiency can be improved by appropriately increasing bandgap of p-InGaN p-i-n heterojunction InGaN solar cell, in addition, the efficiency of p-i-n heterojunction InGaN solar cell may be increased further by employing the back electric filed structure. The simulation results suggest that performance of InGaN solar cell can be improved by employing p-i-n heterojunction structure if the appropriate bandgaps of p-InGaN and n-InGaN are adopted.%研究了器件结构参数对p-i—n结构InGaN单结太阳能电池性能的影响及物理机制.模拟结果发现:随着InGaN禁带宽度的增加,InGaN电池的短路电流减小,但同时开路电压增加,当InGaN层的禁带宽度为1.5eV左右时,同质p-i—n结InGaN电池的效率最高,并计算了不同厚度的i层对InGaN电池效率的影响.进一步的计算表明,适当采用带宽更大的p-InGaN层形成异质p-i—n结InGaN电池可以获得更高效率,但是p-InGaN层带宽过大也会导致电池的效率急剧下降.研究还发现,采用禁带宽度更大的n—InGaN层可以形成背电场,从而增加p-i—n结InGaN太阳电池的效率.研究结果表明,适当选择P—InGaN和n-InGaN禁带宽度形成异质P—i—n结可以提高InGaN太阳能电池效率.

  13. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  14. Carbon analysis in CdTe by nuclear activation

    Science.gov (United States)

    Chibani, H.; Stoquert, J. P.; Hage-Ali, M.; Koebel, J. M.; Abdesselam, M.; Siffert, P.

    1991-06-01

    We describe the capabilities of the nuclear reaction 12C(d, n) 13Nlimit→β +13C the measurement of absolute concentrations of C in CdTe by the charged particle activation (CPA) method. This technique is used to determine the segregation coefficient of C introduced as an impurity in CdTe.

  15. Temperature dependent electroreflectance study of CdTe solar cells

    International Nuclear Information System (INIS)

    Cadmium telluride is a promising material for large scale photovoltaic applications. In this paper we study CdS/CdTe heterojunction solar cells with electroreflectance spectroscopy. Both CdS and CdTe layers in solar cells were grown sequentially without intermediate processing by the close-space sublimation method. Electroreflectance measurements were performed in the temperature range of T = 100–300 K. Two solar cells were investigated with conversion efficiencies of 4.1% and 9.6%. The main focus in this work was to study the temperature dependent behavior of the broadening parameter and the bandgap energy of CdTe thin film in solar cells. Room temperature bandgap values of CdTe were Eg = 1.499 eV and Eg = 1.481 eV for higher and lower efficiency solar cells, respectively. Measured bandgap energies are lower than for single crystal CdTe. The formation of CdTe1−xSx solid solution layer on the surface of CdTe is proposed as a possible cause of lower bandgap energies. - Highlights: ► Temperature dependent electroreflectance measurements of CdS/CdTe solar cells ► Investigation of junction properties between CdS and CdTe ► Formation of CdTe1− xSx solid solution layer in the junction area

  16. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    International Nuclear Information System (INIS)

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs

  17. The influence of different growth procedures on the suitability of cadmium crystals as nuclear radiation detectors. Einfluss unterschiedlicher Zuechtungsverfahren auf die Eignung von Cadmiumtellurid-Kristallen als Kernstrahlungs-Detektoren

    Energy Technology Data Exchange (ETDEWEB)

    Marquardt, H.

    1991-07-04

    CdTe crystals which are suitable to serve as detectors and had been produced with different methods were subjected to tests: THM-material (compensation with Cl-10{sup 19} atoms/cm{sup 3} CdTe); (2) Bridgman material; (3) Sublimation material. Results: THM has almost reached international standards (Eurorad-detector). Bridgman material is very good for low cost production of counters (without spectral resolution) in large numbers. CdTe remains the most promising candidate for {gamma}-detectors at room temperature. (HP).

  18. Characterization of charge collection in CdTe and CZT using the transient current technique

    CERN Document Server

    Fink, J; Lodomez, P; Wermes, N; Fink, Johannes; Krueger, Hans; Lodomez, Philipp; Wermes, Norbert

    2005-01-01

    The charge collection properties in different particle sensor materials with respect to the shape of the generated signals, the electric field within the detector, the charge carrier mobility and the carrier lifetime are studied with the transient current technique (TCT). Using the well-known properties of Si as a reference, the focus is laid on Cadmium-Telluride (CdTe) and Cadmium-Zinc-Telluride (CZT), which are currently considered as promising candidates for the efficient detection of X-rays. All measurements are based on a transient-current technique (TCT) setup, which allows the recording of current pulses generated by an 241Am alpha-source. These signals will be interpreted with respect to the build-up of space-charges inside the detector material and the subsequent deformation of the electric field. Additionally the influence of different electrode materials (i.e. ohmic or Schottky contacts) on the current pulse shapes will be treated in the case of CdTe. Finally, the effects of polarization, i.e. the ...

  19. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    Energy Technology Data Exchange (ETDEWEB)

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo [Dipartimento di Scienze Fisiche, Universita di Napoli Federico II, I-80126 Napoli (Italy) and Istituto Nazionale di Fisica Nucleare, Sezione di Napoli, I-80126 Napoli (Italy); Medicina Nucleare, Istituto Nazionale per lo Studio e la Cura dei Tumori, Fondazione G. Pascale, I-80131 Napoli (Italy)

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter

  20. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    International Nuclear Information System (INIS)

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 μm pitch (sensitive area 14.08x14.08 mm2), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For 99mTc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10-3 cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10-2 cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq 99mTc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter distances from the patient skin.

  1. Near room temperature X-ray and Gamma ray spectroscopic detectors for future space experiments

    OpenAIRE

    Yadav, J.S.; Savitri, S.; Malkar, J. P.

    2005-01-01

    New generation Cadmium Telluride (CZT & CdTe) solid state detectors can provide high quantum efficiency with reasonably good energy resolution and can operate at near room temperature; an unique advantage for space experiments. We present here results of our study of small diode detectors as well as large area pixel detectors. Our study is aimed at developing near room temperature hard X-ray spectroscopy detectors for ASTROSAT and other future Indian space science missions.We have studied a S...

  2. Annealing conditions for intrinsic CdTe

    Science.gov (United States)

    Berding, M. A.

    1999-01-01

    Equilibrium native defect densities in CdTe are calculated from ab initio methods, and compared with experimental results. We find that CdTe is highly compensated p type under tellurium-saturated conditions, with the cadmium vacancy as the dominant acceptor and the tellurium antisite as the compensating donor. This finding is in agreement with recent experiments that find a much larger deviation from stoichiometry than would be predicted by the electrically active defects. Under cadmium-saturated conditions, cadmium interstitials are predicted to dominate and the material is found to be n type. Native defect concentrations and the corresponding carrier concentrations are predicted as a function of processing conditions, and can serve as a guide to postgrowth anneals to manipulate the conductivity of undoped material for applications in x- and γ-ray spectrometers. Furthermore, we show that by choosing appropriate annealing conditions and extrinsic dopants, one can increase the operating efficiency of nuclear spectrometers by reducing the density of specific native defects that produce midgap trapping states.

  3. Cu Migration in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christian [Arizona State University

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  4. Auger relative sensitivivity factors for CdTe oxide

    OpenAIRE

    Bartolo-Pérez, P.; Peña, J. L.; M.H. Farías

    1999-01-01

    The Auger lineshape of Te MNN in measurements of Auger spectra of CdTe oxide films with various degrees of oxidation was analyzed. By using standards from stoichiometric compounds, Auger relative sensitivity factors (RSF´s) of Cd, Te and O for CdTe oxide thin films were obtained. The value of the RFS of oxygen is about constant, 0.27-0.28, for the standard compound, CdO, TeO2 and CdTeO3 (considering the RSF of Cd as 1). However, the obtained RSF of Te changes from 0.69 in CdTe up to 0.87 in C...

  5. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  6. Spin dynamics in bulk CdTe at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Nahalkova, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Nemec, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)]. E-mail: nemec@karlov.mff.cuni.cz; Sprinzl, D. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Belas, E. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Horodysky, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Franc, J. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Hlidek, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Maly, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)

    2006-01-25

    In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature.

  7. Spin dynamics in bulk CdTe at room temperature

    International Nuclear Information System (INIS)

    In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

  8. Preparation and properties of evaporated CdTe films compared with single crystal CdTe

    Science.gov (United States)

    Bube, R. H.

    The hot wall vacuum deposition system is discussed and is is good temperature tracking between the furnace core and the CdTe source itself are indicated. Homojunction cells prepared by HWVE deposition of n-CdTe on p-CdTe substrates show no significant change in dark or light properties after open circuit storage for the next 9 months. CdTe single crystal boules were grown with P, As and Cs impurity. For P impurity it appears that the segregation coefficient is close to unity, that the value of hole density is controlled by the P, and that growth with excess Cd gives slightly higher values of hole density than growth with excess Te. CdTe:As crystals appear similar to CdTe:P crystals.

  9. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  10. Focal-plane detector system for the KATRIN experiment

    Science.gov (United States)

    Amsbaugh, J. F.; Barrett, J.; Beglarian, A.; Bergmann, T.; Bichsel, H.; Bodine, L. I.; Bonn, J.; Boyd, N. M.; Burritt, T. H.; Chaoui, Z.; Chilingaryan, S.; Corona, T. J.; Doe, P. J.; Dunmore, J. A.; Enomoto, S.; Formaggio, J. A.; Fränkle, F. M.; Furse, D.; Gemmeke, H.; Glück, F.; Harms, F.; Harper, G. C.; Hartmann, J.; Howe, M. A.; Kaboth, A.; Kelsey, J.; Knauer, M.; Kopmann, A.; Leber, M. L.; Martin, E. L.; Middleman, K. J.; Myers, A. W.; Oblath, N. S.; Parno, D. S.; Peterson, D. A.; Petzold, L.; Phillips, D. G.; Renschler, P.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Tcherniakhovski, D.; Thümmler, T.; Van Wechel, T. D.; VanDevender, B. A.; Vöcking, S.; Wall, B. L.; Wierman, K. L.; Wilkerson, J. F.; Wüstling, S.

    2015-04-01

    The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-i-n-diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high-vacuum system, a high-vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system. It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation.

  11. Focal-plane detector system for the KATRIN experiment

    International Nuclear Information System (INIS)

    The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-i-n-diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high-vacuum system, a high-vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system. It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation

  12. Focal-plane detector system for the KATRIN experiment

    CERN Document Server

    Amsbaugh, J F; Beglarian, A; Bergmann, T; Bichsel, H; Bodine, L I; Bonn, J; Boyd, N M; Burritt, T H; Chaoui, Z; Chilingaryan, S; Corona, T J; Doe, P J; Dunmore, J A; Enomoto, S; Fischer, J; Formaggio, J A; Fränkle, F M; Furse, D; Gemmeke, H; Glück, F; Harms, F; Harper, G C; Hartmann, J; Howe, M A; Kaboth, A; Kelsey, J; Knauer, M; Kopmann, A; Leber, M L; Martin, E L; Middleman, K J; Myers, A W; Oblath, N S; Parno, D S; Peterson, D A; Petzold, L; Phillips, D G; Renschler, P; Robertson, R G H; Schwarz, J; Steidl, M; Tcherniakhovski, D; Thümmler, T; Van Wechel, T D; VanDevender, B A; Vöcking, S; Wall, B L; Wierman, K L; Wilkerson, J F; Wüstling, S

    2014-01-01

    The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-i-n-diode array, custom readout electronics, two superconducting solenoid magnets, an extreme high-vacuum system, a high-vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system. It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance, both before and after its final installation.

  13. CdTe Solar Cells: The Role of Copper

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  14. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  15. Temperature dependence of photoluminescence of CdTe

    International Nuclear Information System (INIS)

    Temperature dependences of photoluminescence (PL) spectra of CdTe quantum dots (QDs) in a polymer matrix have been studied. The CdTe QDs in a polymer matrix were prepared by transferring them from an aqueous colloid solution. A long storage of specimens was found to result in a bimodal distribution of CdTe QDs by their size in the polymer matrix. The activation energies of the temperature quenching of photoluminescence bands of CdTe QDs in the polymer matrix that correspond to PL bands produced by QDs with different sizes have been determined. The photoluminescence of investigated specimens was found to have the exciton mechanism, which is confirmed by the temperature dependence of the PL peak position and the dependence of the integral PL intensity on the optical excitation intensity.

  16. Radiative and interfacial recombination in CdTe heterostructures

    International Nuclear Information System (INIS)

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm−2 and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10−10 cm3s−1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate

  17. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  18. Bifacial configurations for CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, A. [Scientific and Technological Department, University of Verona, Ca' Vignal 2, Strada Delle Grazie 15, 37134 Verona (Italy); Khrypunov, G. [National Technical University, 61002 Kharkov (Ukraine); Galassini, S. [Medicine and Public Health Department, University of Verona, Ca' Vignal 2, Strada Delle Grazie, 37134 Verona (Italy); Zogg, H. [Thin Film Physics Group, Laboratory for Solid State Physics, ETH, Swiss Federal Institute of Technology, Zuerich, Technoparkstrasse 1, 8005 Zurich (Switzerland); Tiwari, A.N. [Thin Film Physics Group, Laboratory for Solid State Physics, ETH, Swiss Federal Institute of Technology, Zuerich, Technoparkstrasse 1, 8005 Zurich (Switzerland); Department of Electronic and Electrical Engineering, Centre for Renewable Energy Systems and Technology (CREST), Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2007-09-22

    We present a different back contact for CdTe solar cell by the application of only a transparent conducting oxide (TCO), typically ITO, as a back electrical contact on all-PVD CdTe/CdS photovoltaic devices that acts as a free-Cu stable back contact and at the same time allows to realize bifacial CdTe solar cells, which can be illuminated from either or both sides. Also devices with thin CdTe layers (from {proportional_to}2 {mu}m down to 1 {mu}m) have been prepared to improve the conversion efficiency on the back side illumination, which is limited by the collection of carriers far away from the junction and to reduce the amount of material in the CdTe device. Reproducible solar cells exceeding 10% efficiency on the front side illumination and exceeding 3% on the back side illumination are reported. (author)

  19. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State Univeristy; Brinkman, Daniel [Arizona State Univeristy; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Dragica, Vasileska [Arizona State Univeristy; Ringhofer, Christian [Arizona State University

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  20. Studies of key technologies for CdTe solar modules

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.

  1. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  2. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-04-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1-x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  3. Strategies for recycling CdTe photovoltaic modules

    Science.gov (United States)

    Eberspacher, Chris; Gay, Charles F.; Moskowitz, Paul D.

    1994-12-01

    Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.

  4. Electrical properties of single CdTe nanowires

    OpenAIRE

    Elena Matei; Camelia Florica; Andreea Costas; María Eugenia Toimil-Molares; Ionut Enculescu

    2015-01-01

    Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were p...

  5. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  6. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    Science.gov (United States)

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported. PMID:19472638

  7. A photon counting CdTe gamma- and X-ray camera

    International Nuclear Information System (INIS)

    A photon counting CdTe imaging camera suitable for gamma- and X-ray detection has been developed and tested. The current full active imaging area of the gamma/X-ray camera covers 44x44 mm2. The camera is built of eight individual detector hybrids each consisting of a pixelated CdTe detector with dimensions of 22x11 mm2 and solder bump-bonded to a photon counting custom-designed application specific integrated circuit (ASIC). The ASICs are realized in a mixed signal, 0.35 μm 4 metal 2 poly CMOS process. The effective pixel size (image pixel pitch) is 0.5 mm. To enable higher count rate imaging and to achieve better position resolution in X-ray CT scanning each pixel is divided both on the CdTe detector and on the ASIC into two sub-pixels with dimensions 0.25x0.5 mm2. Every pixel circuit has two preamps each connected to one sub-pixel and feeding signal to a separate comparator. The digital pulses of the two distinct comparators are recorded by one common 8-bit counter. The amplifier offsets can be adjusted individually with 3-bit accuracy to compensate for process mismatch. A similar 3-bit gain tuning common to the two amplifiers in one pixel circuit is also implemented. A globally tuneable threshold voltage generated externally with high accuracy is used for energy discrimination. The camera can be operated both in the real time imaging mode with a maximum speed of 100 frames/s and in the accumulation mode with user adjustable counting time. Experimental data collected from a fully operational eight hybrid gamma/X-ray camera is presented and compared to simulated data. The camera exhibits excellent sensitivity and a dynamic range of 1:14,000,000. A sharp line spread function indicates the spatial resolution to be limited only by the pixel size (0.5 mm). A single pixel energy resolution of FWHM 4.7 keV at 122 keV (3.9%) was determined from measured 57Co spectra. The peak width of the spectrum combined from all pixels was somewhat larger due to calibration

  8. Linear and mass attenuation coefficient for CdTe compound of X-rays from 10 to 100 keV energy range in different phases

    International Nuclear Information System (INIS)

    The Full Potential Linear Muffin Tin Orbitals method within the density functional theory has been utilized to calculate structural and electronic properties of the CdTe compound. We have checked that the CdTe has two phase-transitions from zinc-blend to cinnabar and from cinnabar to rocksalt. We have found that the rigidity, the energy and the nature of the gap change according to the phase change, so we can predict that a CdTe detector may have different behaviors in different phase conditions. In order to investigate this behavior change, the linear and the mass attenuation coefficients of X-ray in rocksalt, zinc-blend and cinnabar structures are calculated from 10 keV to100 keV, using the XCOM data. We have found that when CdTe undergoes a phase transition from zinc-blend to cinnabar, its linear attenuation coefficient decreases down to a value of about 100 times smaller than its initial one, and when it undergoes a transition from cinnabar to rocksalt it increases up to a value about 90 times larger than its initial one

  9. Linear and mass attenuation coefficient for CdTe compound of X-rays from 10 to 100 keV energy range in different phases

    Energy Technology Data Exchange (ETDEWEB)

    Saim, A., E-mail: saim1989asma@gmail.com; Tebboune, A.; Berkok, H.; Belameiri, N.; Belbachir, A.H.

    2014-07-25

    The Full Potential Linear Muffin Tin Orbitals method within the density functional theory has been utilized to calculate structural and electronic properties of the CdTe compound. We have checked that the CdTe has two phase-transitions from zinc-blend to cinnabar and from cinnabar to rocksalt. We have found that the rigidity, the energy and the nature of the gap change according to the phase change, so we can predict that a CdTe detector may have different behaviors in different phase conditions. In order to investigate this behavior change, the linear and the mass attenuation coefficients of X-ray in rocksalt, zinc-blend and cinnabar structures are calculated from 10 keV to100 keV, using the XCOM data. We have found that when CdTe undergoes a phase transition from zinc-blend to cinnabar, its linear attenuation coefficient decreases down to a value of about 100 times smaller than its initial one, and when it undergoes a transition from cinnabar to rocksalt it increases up to a value about 90 times larger than its initial one.

  10. Strain reduction in selectively grown CdTe by MBE on nanopatterned silicon on insulator (SOI) substrates

    OpenAIRE

    Bommena, R.; Seldrum, T.; Samain, Louise; Sporken, R.; Sivananthan, S.; S. R. J. Brueck

    2008-01-01

    Silicon-based substrates for the epitaxy of HgCdTe are an attractive low-cost choice for monolithic integration of infrared detectors with mature Si technology and high yield. However, progress in heteroepitaxy of CdTe/Si (for subsequent growth of HgCdTe) is limited by the high lattice and thermal mismatch, which creates strain at the heterointerface that results in a high density of dislocations. Previously we have reported on theoretical modeling of strain partitioning between CdTe and Si o...

  11. CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications

    CERN Document Server

    Triboulet, Robert

    Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.

  12. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    Science.gov (United States)

    Tang, H. P.; Feng, J. Y.; Fan, Y. D.; Li, H. D.

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480°C, while CdTe growth inboth (100) and (111) orientations occured when the substrate preheating temperature was above 550°C. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec.

  13. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tang, H.P.; Feng, J.Y.; Fan, Y.D.; Li, H.D. (Dept. of Materials Science and Engineering, Tsinghua Univ., Beijing (China))

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480degC, while CdTe growth in both (100) and (111) orientations occurred when the substrate preheating temperature was above 550degC. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec. (orig.).

  14. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  15. Determination of the dynamic nonlinearity of semiconductor and combined detectors for computer-assisted tomography

    International Nuclear Information System (INIS)

    The experimental arrangement described reproduces values of the x-ray photon flux density that are typical of computer-assisted tomography (108-1010 cm-2 x sec-1) and its rates of relative change. The authors give the results of determination of the dynamic nonlinearity γ/sup d/ of combined detectors [CsI(Tl) +- Si photodiode and CdWO4 + FEU-60 photomultiplier] and semiconducting CdTe. The CdTe detector has the highest value, γ/sup d/ ≥ 36%, while CdWO4 + FEU-60 has the lowest values, γ/sup d/ ≤ 1%, on the trailing edge of the current signal

  16. Qualification model of the space ISGRI CdTe gamma-ray camera

    CERN Document Server

    Limousin, O; Bonnin, C; Cretolle, J; Goldwurm, A; Horeau, B; Laurent, P; Lebrun, F; Leray, J P

    2001-01-01

    A new generation of large area semiconductor based gamma-ray camera for astrophysics space application has been developed through the gamma-ray IBIS (Imager on Board INTEGRAL Satellite) telescope program, on board the ESA INTEGRAL satellite. This instrument features a coded-mask aperture imaging system, active and passive shields and two detector arrays. The first one (ISGRI : INTEGRAL Soft Gamma-Ray Imager) is made of 16384 CdTe detectors (4x4 mm large, 2 mm thick) operating at room temperature and will operate between 15 keV and 1 MeV. The second detector array (PICsIT : Pixelated CsI Telescope) is made of 4096 CsI scintillators (9.2x9.2 mm large, 30 mm high) coupled to silicon PIN photodiodes working between 150 keV and 10 MeV. IBIS combine broad band energy, spectroscopic capabilities and high spatial resolution imaging (12 arcmin) over a wide field of view (approx 20 deg. x 20 deg., 50% sensitivity). A 'flight-like' model of the detectors has been built, integrated and successfully tested. After a descri...

  17. LHC beam instrumentation detectors and acquisition systems

    International Nuclear Information System (INIS)

    An overview of some of the detectors and acquisition systems being developed for measuring and controlling beam parameters in the LHC. The two largest systems concern the measurement of beam position, with over 1000 monitors, and beam loss, with over 3000 monitors. For the beam position system a novel wide band time normaliser has been developed to allow bunch-by-bunch 40MHz acquisitions with a dynamic range greater than 30dB and an overall linearity of better than 1%. Also mentioned will be the acquisition system for the fast beam current transformers and the development of CdTe detectors for luminosity monitoring. [author

  18. Recent developments in evaporated CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Khrypunov, G. [Kharkov State Polytechnic University, UA-310002 Kharkov (Ukraine); Romeo, A. [Faculty of Science, University of Verona, Ca' Vignal 2, Strada Delle Grazie, 37134 Verona (Italy); Kurdesau, F. [National Academy of Sciences Belarus, Logoysky Tract 22, Minsk 220090 (Belarus); Baetzner, D.L. [The Australian National University, ACTON, ACT 0200 (Australia); Zogg, H.; Tiwari, A.N. [Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Zuerich, Technoparkstrasse 1, 8005 Zurich (Switzerland)

    2006-04-14

    Recent developments in the technology of high vacuum evaporated CdTe solar cells are reviewed. High-efficiency solar cells of efficiencies up to 12.5% have been developed on soda-lime glass substrates with a low-temperature (<450{sup o}C) process. This simple process is suitable for in-line production of large-area solar modules on glass as well as on flexible polymer films with a roll-to-roll deposition process. Flexible and lightweight CdTe solar cells with a record efficiency of 11.4% have been developed in a superstrate configuration, and 3.5% efficiency mini-modules have been realised in a preliminary development. Deposition of high-temperature stable ITO front contact layer on polyimide is important for high-efficiency cells, as the layer should withstand processing steps maintaining its high electrical conductivity and optical transparency. Another development is an application of a transparent conducting oxide (TCO) ITO as a back electrical contact on CdTe leading to first bifacial CdTe solar cells, which can be illuminated from either or both sides. Accelerated long-term stability tests show that light soaking improves the efficiency of CdTe solar cells with ITO back contacts and performance does not degrade. Stability of CdTe solar cells has been measured after irradiation with high-energy protons and electrons of different fluences. These solar cells exhibit superior radiation tolerance compared to conventional Si and GaAs solar cells for space applications. Because of extreme stability, and high specific power (kW/kg) of flexible solar cells, CdTe has a promising potential for space applications. (author)

  19. Comparison of photon counting and conventional scintillation detectors in a pinhole SPECT system for small animal imaging: Monte carlo simulation studies

    Science.gov (United States)

    Lee, Young-Jin; Park, Su-Jin; Lee, Seung-Wan; Kim, Dae-Hong; Kim, Ye-Seul; Kim, Hee-Joung

    2013-05-01

    The photon counting detector based on cadmium telluride (CdTe) or cadmium zinc telluride (CZT) is a promising imaging modality that provides many benefits compared to conventional scintillation detectors. By using a pinhole collimator with the photon counting detector, we were able to improve both the spatial resolution and the sensitivity. The purpose of this study was to evaluate the photon counting and conventional scintillation detectors in a pinhole single-photon emission computed tomography (SPECT) system. We designed five pinhole SPECT systems of two types: one type with a CdTe photon counting detector and the other with a conventional NaI(Tl) scintillation detector. We conducted simulation studies and evaluated imaging performance. The results demonstrated that the spatial resolution of the CdTe photon counting detector was 0.38 mm, with a sensitivity 1.40 times greater than that of a conventional NaI(Tl) scintillation detector for the same detector thickness. Also, the average scatter fractions of the CdTe photon counting and the conventional NaI(Tl) scintillation detectors were 1.93% and 2.44%, respectively. In conclusion, we successfully evaluated various pinhole SPECT systems for small animal imaging.

  20. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  1. High-temporal-resolution CdTe nuclear stethoscope for cardiac γ-ventriculography: preclinical evaluation

    Science.gov (United States)

    Eclancher, Bernard; Arntz, Y.; Chambron, Jacques; Prat, Vincent; Perret, C.; Karman, Miklos; Pszota, Agnes; Nemeth, Laszlo

    1999-10-01

    A hand-size probe including 64 elementary 5 X 5 X 2 mm CdTe detectors has been optimized to detect the (gamma) tracer 99Tc in the heart left ventricle. The system, has been developed, not for imaging, allowing acquisitions at 33 Hz to describe the labeled blood volume variations. The (gamma) -counts variations were found accurately proportional to the known volume variations of an artificial ventricle paced at variable rate and systolic volume. Softwares for on line data monitoring and for post-processing have been developed for beat to beat assessment of cardiac performance at rest and during physical exercise. The evaluation of this probe has been performed on 5 subjects in the Nucl Dep of Balatonfured Cardiology Hospital. It appears that the probe needs to be better shielded to work properly in the hot environment of the ventricle, but can provide reliable ventriculography, even under heavy exercise load, although the ventricle volume itself is unknown.

  2. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1993-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  3. Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

    International Nuclear Information System (INIS)

    The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and 241Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented

  4. CdTe photovoltaics: Life cycle environmental profile and comparisons

    International Nuclear Information System (INIS)

    We discuss the emissions of cadmium throughout all the life stages of CdTe PV modules, from extracting, refining, and purifying the raw materials to producing, using, and disposing or recycling of the modules. Then, we compare these emissions with those in the life cycle of three different types of crystalline Si PV modules. The energy requirement and energy pay back times (EPBT) of CdTe PV modules are considerably shorter than that of crystalline Si modules, although the latter exhibit higher efficiencies. This difference is primarily due to the energy used to process silicon, a fraction of which is derived from fossil fuels, inevitably producing Cd and many other heavy-metal emissions. The lower energy requirement of CdTe PV results in lower emissions of all pollutants, including cadmium

  5. Study of Back Contacts for CdTe Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    ZnTe/ZnTe∶Cu layer is used as a complex back contact. The parameters of CdTe solar cells with and without the complex back contacts are compared. The effects of un-doped layer thickness, doped concentration and post-deposition annealing temperature of the complex layer on solar cells performance are investigated.The results show that ZnTe/ZnTe∶Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells. Un-doped layer and post-deposition annealing of high temperature can increase open voltage. Using the complex back contact, a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained.

  6. Design of a thin film CdTe solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V.

    1988-01-15

    Cadmium telluride was originally considered for thin film solar cells because of its optimum band gap, high optical absorption coefficient and ability to be doped. Furthermore, it is a stable compound which can be produced by a wide variety of methods from stable raw materials. As thin film photovoltaics mature, however, it is clear that several more subtle attributes have a significant impact on the viability of commercialization. We discuss the observations which have provided insight and direction to Ametek's CdTe solar cell program. Rather than try to modify the inherent material properties of CdTe, advances have been made by designing a solar cell that exploits existing properties. Specifically, the tendency to self-compensate, which makes low resistance contacting difficult, is turned into an advantage in the n-i-p configuration; the CdTe provides an intrinsic layer with good carrier collection efficiency.

  7. Resetting the Defect Chemistry in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  8. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B., E-mail: gnade@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, G. R.; Allee, D. R. [Flexible Display Center, Arizona State University, Phoenix, Arizona 85284 (United States); Sastré-Hernández, J.; Contreras-Puente, G. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Mexico City 07738 (Mexico); Mendoza-Pérez, R. [Universidad Autónoma de la Ciudad de México, Mexico City 09790 (Mexico)

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  9. Design of a hybrid gas proportional counter with CdTe guard counters for sup 1 sup 4 C dating system

    CERN Document Server

    Zhang, L; Hinamoto, N; Nakazawa, M; Yoshida, K

    2002-01-01

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a sup 1 sup 4 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller t...

  10. Calorimetric investigation on the Cd-Te binary alloys

    International Nuclear Information System (INIS)

    The enthalpy of formation of the Cd-Te solid and liquid alloys was measured by direct reaction calorimetry (DRC) (drop method) at 737 and 1259 K with the help of a Tian-Calvet high temperature calorimeter. The DRC procedure used was very simple at 737 K but more sophisticated at 1259 K due to the high vapor pressures of both components. This allowed us to determine the enthalpy of formation of the CdTe solid compound in agreement with the data of the literature and the enthalpy of formation of the melts in the whole range of concentration. (orig.)

  11. Electrical properties of single CdTe nanowires

    Directory of Open Access Journals (Sweden)

    Elena Matei

    2015-02-01

    Full Text Available Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties.

  12. Advances in CdTe n-i-p photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V. (Ametek Applied Materials Lab., Harleysville, PA (USA))

    1989-10-15

    Development of the CdTe n-i-p solar cell has enabled researchers to produce 11% efficient solar cells while eliminating stability problems associated with a low-resistance back contact. Furthermore, loss analysis indicates that significant increases in efficiency can still be realized through reduction of absorption and reflection and by passivation of recombination centers at the interfaces. Simplifications in the interconnection procedures make the CdTe n-i-p solar module more ''manufacturable''. A submodule with four interconnected cells has been produced. It has an aperture area efficiency over 8% with an area ratio of 0.91. (orig.).

  13. RELAXATION LONGUE DUREE DE LA PHOTOCONDUCTIVITE DANS CdTe

    OpenAIRE

    Zozime, A.; Schröter, W.

    1983-01-01

    Différents aspects des mesures de photoconductivité faites sur des monocristaux de CdTe sont présentés. Les signaux montrent l'existence d'un processus de relaxation de longue durée. Les spectres suivent une loi de variation du type loi d'Urbach. Enfin, le seuil d'énergie correspondant à la limite de détection des signaux mesurés dans CdTe de type n correspond à un niveau profond dans la bande interdite, associé aux dislocations.

  14. Electron-hole dynamics in CdTe tetrapods.

    Science.gov (United States)

    Malkmus, Stephan; Kudera, Stefan; Manna, Liberato; Parak, Wolfgang J; Braun, Markus

    2006-09-01

    We present transient absorption studies with femtosecond time resolution on the electron-hole dynamics in CdTe tetrapod nanostructures. Electron-hole pairs are generated by optical excitation in the visible spectral range, and an immediate bleach and induced absorption signal are observed. The relaxation dynamics to the lowest excitonic state is completed in about 6 ps. Experiments with polarized excitation pulses give information about the localization of the excited-state wave functions. The influence of the nanocrystal shape on the optical properties of CdTe nanoparticles is discussed. PMID:16942067

  15. The ISGRI CdTe gamma-ray camera: first steps

    CERN Document Server

    Limousin, O; Cretolle, J; Dzitko, H; Laurent, P; Lebrun, F; Leray, J P; Arques, M; Baffert, N; Mathy, F; Noca, A; Trystram, P; Villard, P; Baron, P; Delagnes, E; Rouger, M

    2000-01-01

    The gamma-ray telescope IBIS, on board the INTEGRAL satellite, features a coded-mask aperture, active and passive shields and two detector arrays. The first one (ISGRI) is an assembly of 16384 CdTe detectors (4x4 mm large, 2 mm thick) operating at room temperature. ISGRI covers the lower part (15 keV-1 MeV) of the IBIS energy range (15 keV-10 MeV). Detectors are arranged on polycells, each including 16 crystals, connected to their front-end electronics (ASICs). Each of the eight independent ISGRI modules are made of 128 polycells. The ASICs contain a low noise charge-sensitive preamplifier and feature pulse rise-time measurement in addition to the standard pulse height measurement. This permits to compute a charge loss correction based on the charge drift time. After application of this correction, a spectral resolution around 7.5% at 122 keV is obtained with the ASICs. Today, 16 polycells have been mounted on the first representative ISGRI module. This module has been interfaced with the entire ISGRI data-pr...

  16. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    OpenAIRE

    Wagner Anacleto Pinheiro; Vivienne Denise Falcão; Leila Rosa de Oliveira Cruz; Carlos Luiz Ferreira

    2006-01-01

    Unlike other thin film deposition techniques, close spaced sublimation (CSS) requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate) and a sintered C...

  17. Thin detectors for the CHICSi δE-E telescope

    International Nuclear Information System (INIS)

    A pilot series of 10 μm to 15 μm thin silicon detectors has been made for the AE-E telescopes in the CHICSi experiment at the Celsius Heavy Ion Collider in Uppsala, Sweden. AE-E telescopes provide ion type identification and energy determination of collision fragments. The thin detectors are made as p-i-n diodes in thin etched membranes on 280 μm thick silicon wafers. The membranes are made with anisotropic etching using 25 w% tetramethylammonium hydroxide (TMAH) solution. The etch speed of this solution is very uniform across a wafer. As a result detectors with uniform thickness can be produced. The etch depth varies with less than 0.3 μm and the surface roughness is in the 2 - 4 nm range. Each detector has a 10.0 x 10.0 mm2 active area on a 10.2 x 10.2 mm2 membrane surrounded by a 1.1 mm wide supporting frame. The detectors have active area leakage currents of approximately 0.5 nA at 20 V. The breakdown voltage of the detectors is above 100 V. Test experiments with telescopes consisting of a thin detector in combination with a thick detector have shown excellent ion separation capabilities. Isotope separation of the isotope 7Be and the isotopes 9Be and 10Be can be seen

  18. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  19. Development of a CZT drift ring detector for X and γ ray spectroscopy

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Boothman, V.; Veeramani, P.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2015-04-01

    CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 keV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

  20. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  1. Electron transient transport in CdTe polycrystalline films

    Science.gov (United States)

    Ramírez-Bon, R.; Sánchez-Sinencio, F.; González de la Cruz, G.; Zelaya, O.

    1991-11-01

    Electron transient currents between coplanar electrodes have been measured in intrinsic polycrystalline films of CdTe, by means of the time of flight technique. The experimental results: electron transient current vs time, transit time vs voltage and the temperature dependence of the electron drift mobility, show features characteristics of dispersive electrical transport similar to that observed in disordered solids.

  2. EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

    OpenAIRE

    Panin, G.; Yakimov, E.

    1991-01-01

    The EBIC and remote contact EBIC (REBIC) techniques have been used to reveal grain boundaries and precipitates in CdTe crystals and to study their recombination contrast as a function of the electron beam parameters and temperature. The results obtained are discussed taking into account the defect charge state and the recombination properties of their environment.

  3. CdTe nano-structures for photovoltaic devices

    Science.gov (United States)

    Corregidor, V.; Alves, L. C.; Franco, N.; Barreiros, M. A.; Sochinskii, N. V.; Alves, E.

    2013-07-01

    CdTe nano-structures with diameter of ∼100 nm and variable length (200-600 nm) were fabricated on glass substrates covered with conductive buffer layers such as NiCr, ZAO (ZnO:Al2O3 + Ta2O5) or TiPd alloys. The fabrication process consisted of the starting vapour deposition of metal catalyst dropped layer followed by the isothermal catalyst-prompted vapour growth of CdTe nano-structured layer of controllable shape and surface filling. The effect of buffer layers on the crystallographic orientation and thickness of CdTe nano-structured layers is investigated by means of IBA techniques, SEM and X-ray diffraction. It was shown that the formed CdTe nano-layers have a cubic structure, mainly oriented towards the [1 1 1] crystallographic direction, except for those grown on ZAO layer where the X-ray diffraction signal is very weak to be associated to any crystallographic form. The RBS spectra recorded on different areas of each sample type showed an almost constant thickness and SEM images revealed an homogeneous and dense distribution of the structures. It was also possible to study the first stage of the nano-structures grown on the Bi2Te3 seeds.

  4. CdTe nano-structures for photovoltaic devices

    International Nuclear Information System (INIS)

    CdTe nano-structures with diameter of ∼100 nm and variable length (200–600 nm) were fabricated on glass substrates covered with conductive buffer layers such as NiCr, ZAO (ZnO:Al2O3 + Ta2O5) or TiPd alloys. The fabrication process consisted of the starting vapour deposition of metal catalyst dropped layer followed by the isothermal catalyst-prompted vapour growth of CdTe nano-structured layer of controllable shape and surface filling. The effect of buffer layers on the crystallographic orientation and thickness of CdTe nano-structured layers is investigated by means of IBA techniques, SEM and X-ray diffraction. It was shown that the formed CdTe nano-layers have a cubic structure, mainly oriented towards the [1 1 1] crystallographic direction, except for those grown on ZAO layer where the X-ray diffraction signal is very weak to be associated to any crystallographic form. The RBS spectra recorded on different areas of each sample type showed an almost constant thickness and SEM images revealed an homogeneous and dense distribution of the structures. It was also possible to study the first stage of the nano-structures grown on the Bi2Te3 seeds

  5. CdTe nano-structures for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Corregidor, V., E-mail: vicky.corregidor@itn.pt [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, E.N. 10, 2686-953 Sacavém (Portugal); CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); Alves, L.C. [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, E.N. 10, 2686-953 Sacavém (Portugal); CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); Franco, N. [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, E.N. 10, 2686-953 Sacavém (Portugal); Barreiros, M.A. [LNEG, Estrada Estrada do Paço do Lumiar 22, 1649-038 Lisboa (Portugal); Sochinskii, N.V. [Consorzio CREO, SS 17 Località Boschetto, 67100 L’Aquila (Italy); Alves, E. [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, E.N. 10, 2686-953 Sacavém (Portugal); CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal)

    2013-07-01

    CdTe nano-structures with diameter of ∼100 nm and variable length (200–600 nm) were fabricated on glass substrates covered with conductive buffer layers such as NiCr, ZAO (ZnO:Al{sub 2}O{sub 3} + Ta{sub 2}O{sub 5}) or TiPd alloys. The fabrication process consisted of the starting vapour deposition of metal catalyst dropped layer followed by the isothermal catalyst-prompted vapour growth of CdTe nano-structured layer of controllable shape and surface filling. The effect of buffer layers on the crystallographic orientation and thickness of CdTe nano-structured layers is investigated by means of IBA techniques, SEM and X-ray diffraction. It was shown that the formed CdTe nano-layers have a cubic structure, mainly oriented towards the [1 1 1] crystallographic direction, except for those grown on ZAO layer where the X-ray diffraction signal is very weak to be associated to any crystallographic form. The RBS spectra recorded on different areas of each sample type showed an almost constant thickness and SEM images revealed an homogeneous and dense distribution of the structures. It was also possible to study the first stage of the nano-structures grown on the Bi{sub 2}Te{sub 3} seeds.

  6. Band structure of CdTe under high pressure

    International Nuclear Information System (INIS)

    The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(EF)) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (PM = 1.935 Mbar) and the corresponding reduced volume ((V/V0)M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

  7. Hydrothermal synthesis for high-quality CdTe nanocrystals

    International Nuclear Information System (INIS)

    Synthesis of water-soluble CdTe nanocrystals with high photoluminescence quantum yield and narrow fluorescence emission spectra is developed under the conditions of low precursor concentration and moderate temperature of hydrothermal growth. The relatively high temperature accelerates the particle growth rate and enhances the photoluminescence quantum yield. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  8. Intracavity CdTe modulators for CO2 lasers.

    Science.gov (United States)

    Kiefer, J. E.; Nussmeier, T. A.; Goodwin, F. E.

    1972-01-01

    The use of cadmium telluride as an electrooptic material for intracavity modulation of CO2 lasers is described. Included are the predicted and measured effects of CdTe intracavity modulators on laser performance. Coupling and frequency modulation are discussed and experimental results compared with theoretically predicted performance for both techniques. Limitations on the frequency response of the two types of modulation are determined.

  9. Catalytic growth of CdTe nanowires by closed space sublimation method

    International Nuclear Information System (INIS)

    CdTe nano-/micro-structures with various morphologies were grown by using the closed space sublimation (CSS) method on a sapphire substrate by Au-catalyzed vapor–liquid–solid (VLS) mechanism. Length, diameter, and morphology of the CdTe nano-/micro-structures depended on the growth time and temperature gradient between the substrate and powdered CdTe source. Scanning electron microscopy images showed that an Au catalyst droplet existed at the tips of CdTe nanowires, which confirms that CdTe nanowires were grown by an Au-catalyzed VLS mechanism. Also, we observed that the two-dimensional CdTe film layer initially formed before the growth of the CdTe nano-/micro-wires. The optical and structural properties of CdTe nano-/micro-structures were characterized by X-ray diffraction technique and micro-Raman spectroscopy. Our study demonstrates that diverse CdTe nano-/micro-structures can be fabricated by using Au-catalyzed VLS growth process in a simple CSS chamber by controlling the temperature gradient and growth time. - Highlights: • We demonstrated CdTe nanowires using closed space sublimation method. • Au-catalyst droplets at the tips confirmed vapor–liquid–solid mechanism. • Diameters and lengths increased with increasing temperature gradient and time

  10. The basic component of the ISGRI CdTe γ-ray camera for space telescope IBIS on board the INTEGRAL satellite

    International Nuclear Information System (INIS)

    The γ-ray imager telescope IBIS, on board the INTEGRAL satellite, features a coded mask aperture and two detector arrays. The first detector array (ISGRI) is an assembly of 16 384 CdTe detectors (4x4 mm2 large, 2 mm thick) operating at room temperature under 100 V bias. ISGRI covers the lower part (20 keV-1 MeV) of the IBIS energy range (20 keV-10 MeV). The polycell is the basic component of the ISGRI detector array. It is made of 16 CdTe pixels and their front-end electronics. In order to improve the response of the instrument, a charge loss correction based on the charge-drift time is necessary. Therefore, the front-end electronics performs the rise-time measurement in addition to the standard pulse-height measure. On the other hand, the necessarily tight packaging and the limited available power requires the use of ASICs. These 4-channel analog-digital ASICs should be radiation resistant either through the use of a latch up free technology or by applying an appropriate layout design. The optimal operating temperature (around 0 deg. C) is ensured under vacuum conditions by radiative cooling. This paper describes the ISGRI design with particular emphasis on the ASICs and polycells, and reports preliminary performance measurements

  11. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  12. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  13. Application of Hybrid Pixel Detectors for Searches of Rare Decays

    Energy Technology Data Exchange (ETDEWEB)

    Durst, J.; Anton, Gisela; Boehnel, Michael; Gleixner, Thomas; Lueck, Ferdinand; Michel, Thilo [Erlangen Centre for Astroparticle Physics (ECAP), Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Schwenke, Maria; Zuber, Kai [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany)

    2011-06-15

    The new generation of hybrid pixel detectors like the Timepix detector provides access to the track information of the energy deposition in the used sensor, which allows better background discrimination in experiments for searches of rare decays. Due to the hybrid design several combinations of an ASIC with a sensor are possible. Assemblies are available with an attached Silicon sensor or CdTe sensor respectively. The detector measures the energy deposition using the time over threshold method. In this contribution we present simulation results of the detector response of the Timepix detector in applications for searches of rare decays. One application would be the search for the neutrinoless double beta decay of {sup 116}Cd using Timepix detectors with enriched CdTe as sensor material. In addition to the simulation results we present first experimental background measurements using a Timepix detector with Silicon sensor in the underground laboratory in Dresden. Using cluster analysis methods it is possible to categorise the single events.

  14. Direct Measurement of Mammographic X-Ray Spectra with a Digital CdTe Detection System

    Directory of Open Access Journals (Sweden)

    Giuseppe Raso

    2012-06-01

    Full Text Available In this work we present a detection system, based on a CdTe detector and an innovative digital pulse processing (DPP system, for high-rate X-ray spectroscopy in mammography (1–30 keV. The DPP system performs a height and shape analysis of the detector pulses, sampled and digitized by a 14-bit, 100 MHz ADC. We show the results of the characterization of the detection system both at low and high photon counting rates by using monoenergetic X-ray sources and a nonclinical X-ray tube. The detection system exhibits excellent performance up to 830 kcps with an energy resolution of 4.5% FWHM at 22.1 keV. Direct measurements of clinical molybdenum X-ray spectra were carried out by using a pinhole collimator and a custom alignment device. A comparison with the attenuation curves and the half value layer values, obtained from the measured and simulated spectra, from an ionization chamber and from a solid state dosimeter, also shows the accuracy of the measurements. These results make the proposed detection system a very attractive tool for both laboratory research, calibration of dosimeters and advanced quality controls in mammography.

  15. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    CERN Document Server

    Antier, S; Limousin, O; Caroli, E; da Silva, R M Curado; Blondel, C; Chipaux, R; Honkimaki, V; Horeau, B; Laurent, P; Maia, J M; Meuris, A; Del Sordo, S; Stephen, J B

    2015-01-01

    Since the initial exploration of soft gamma-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars and black holes are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical process. This is why most of the projects for the next generation of space missions covering the tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The hard X-ray imaging spectrometer module, developed in CEA with the generic name of Caliste module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe cr...

  16. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    International Nuclear Information System (INIS)

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations

  17. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Yin, Wan-Jian [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); College of Physics, Optoelectronics and Energy and Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Beijing Computational Science Research Center, Beijing 100094 (China)

    2016-01-28

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  18. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    Science.gov (United States)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Metzger, Wyatt; Wei, Su-Huai

    2016-01-01

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  19. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  20. Measurement and Simulation of Neutron response at Cf-252 neutron field using SiC Diode Detector

    International Nuclear Information System (INIS)

    Recently, a silicon carbide (SiC) semiconductor detector is drawing attention as a neutron detector in the harsh environment because of its discriminative characteristics. SiC is very resistant to high temperature and intense radiation field, compared with the other semiconductor materials. In this sense, SiC is expected to be a semiconductor material well suited for nuclear power plant applications such as in-core reactor neutron flux monitoring and safeguarding nuclear materials. The SiC diode detector could be expected to replace the SPND. In our previous study, several types of 4H SiC p-i-n diode detector were fabricated and tested. This study is focused on the prediction of neutron response for SiC diode detector before in-core experiment

  1. Materials for infrared detectors and sources; Proceedings of the Symposium, Boston, MA, Dec. 1-5, 1986

    Science.gov (United States)

    Farrow, R. F. C.; Schetzina, J. F.; Cheung, J. T.

    The present conference discusses epitaxial semiconductor structures for the IR, materials requirements for IR detectors and imagers, HgCdTe for LWIR imagers and heterojunction devices, epitaxial IV-VI semiconductor films, the growth of bulk IR sensor-material crystals, structure-property relationships in semiconductor alloys, high quality growth of CdTe by the gradient-freeze method, the electronic properties and vacancy-formation energies of HgCdTe vs HgZnTe, and the structure of hydrogenated amorphous carbon IR coatings. Also discussed are tailored microstructures for IR detection, the X-ray characterization of IR materials, subsurface microlattice strain mapping, deep-level defects in CdTe, the MBE HgTe growth process, interdiffused multilayer processing in alloy growth, HgTe-CdTe superlattices grown by photo-MOCVD, InSb in IR detector applications, and CdTe films grown on InSb substrates by organometallic epitaxy.

  2. Materials for infrared detectors and sources; Proceedings of the Symposium, Boston, MA, Dec. 1-5, 1986

    Energy Technology Data Exchange (ETDEWEB)

    Farrow, R.F.C.; Schetzina, J.F.; Cheung, J.T.

    1987-01-01

    The present conference discusses epitaxial semiconductor structures for the IR, materials requirements for IR detectors and imagers, HgCdTe for LWIR imagers and heterojunction devices, epitaxial IV-VI semiconductor films, the growth of bulk IR sensor-material crystals, structure-property relationships in semiconductor alloys, high quality growth of CdTe by the gradient-freeze method, the electronic properties and vacancy-formation energies of HgCdTe vs HgZnTe, and the structure of hydrogenated amorphous carbon IR coatings. Also discussed are tailored microstructures for IR detection, the X-ray characterization of IR materials, subsurface microlattice strain mapping, deep-level defects in CdTe, the MBE HgTe growth process, interdiffused multilayer processing in alloy growth, HgTe-CdTe superlattices grown by photo-MOCVD, InSb in IR detector applications, and CdTe films grown on InSb substrates by organometallic epitaxy.

  3. Hardening mechanism of twin boundaries during nanoindentation of soft-brittle CdTe crystals

    International Nuclear Information System (INIS)

    Deformations of cadmium telluride (CdTe) under nanoindentation were simulated by molecular dynamics. CdTe slides along the {1 1 1} planes under nanoindentation through edge dislocations. During loading, the sliding of CdTe was limited at twin boundaries, inducing the pile-up phenomenon. When dislocations transferred across the twin boundary, a sessile dislocation and steps formed. The coherence effect of both twin boundaries locked the dislocations at the twin boundary effectively, indicating a better hardening effect

  4. Near room temperature X-ray and Gamma ray spectroscopic detectors for future space experiments

    CERN Document Server

    Yadav, J S; Malkar, J P

    2005-01-01

    New generation Cadmium Telluride (CZT & CdTe) solid state detectors can provide high quantum efficiency with reasonably good energy resolution and can operate at near room temperature; an unique advantage for space experiments. We present here results of our study of small diode detectors as well as large area pixel detectors. Our study is aimed at developing near room temperature hard X-ray spectroscopy detectors for ASTROSAT and other future Indian space science missions.We have studied a Si-PIN detector in the energy range 5 - 60 keV and CZT & CdTe Schottky diode detectors in the energy region 10 - 1330 keV. We have studied large area (64 cm$^2$) CZT pixel detectors with pixel size close to the small CZT detector. We have studied individual pixels as well as CZT detector as a whole (summed over all the 1024 pixels). The energy resolution behaviour of the large area CZT detector is similar to that of small diode detectors in the low energy region. The change in operating temperature from room temper...

  5. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm2, which is higher than that of samples prepared at other temperatures. Furthermore, CdCl2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl2 treatment improved to 2.97 mA/cm2, indicating a potential application in photovoltaic devices

  6. Aluminum doping of CdTe polycrystalline films starting from the heterostructure CdTe/Al

    OpenAIRE

    Becerril, M.; O. Vigil-Galán; G. Contreras-Puente; O. Zelaya-Angel

    2011-01-01

    Aluminum doped CdTe polycrystalline films were obtained from the heterostructure CdTe/Al/Corning glass. The aluminum was deposited by thermal vacuum evaporation and the CdTe by sputtering of a CdTe target. The aluminum was introduced into the lattice of the CdTe from a thermal annealed to the CdTe/Al/Corning glas heterostructure. The electrical, structural, nd optical properties were analyzed as a function of the Al concentrations. It found that when Al is incorporated, the electrical resisti...

  7. Photoluminescence and Electroluminescence Properties of CdTe Nanoparticles in Conjugated Polymer Hosts

    Institute of Scientific and Technical Information of China (English)

    GUO, Fengqi; XIE, Puhui

    2009-01-01

    The photoinduced energy transfer process from conjugated polymer (PPE4+) to CdTe nanocrystals was found both in solutions and in thin films by a fluorescence spectroscopic technique. Films of PPE4+ blended with CdTe-2 nanocrystals were formed by an electrostatic layer-by-layer assembly technique. Light emitting diodes were fabricated using CdTe-2 as an emitter in PPE4+ host. PPE4+ works as a molecular wire in the energy transfer process from the polymer to the CdTe-2 nanocrystals.

  8. Raman investigation on thin and thick CdTe films obtained by close spaced vacuum sublimation technique

    International Nuclear Information System (INIS)

    The CdTe thin and thick films were obtained by the close spaced vacuum sublimation technique on a glass substrate under the following growth conditions: the evaporator temperature was 620 C; and the substrate temperature was varied in the range from 250 C to 550 C. High purity CdTe powder was used as a charge for evaporation. The Raman spectra were measured using TRIAX 320 and TRIAX 550 spectrometers at room temperature. The 488-nm line and 514.5-nm line of an Ar+ laser and a 785-nm diode laser were used as excitation sources. The signal was collected by the liquid nitrogen cooled charge-coupled-device (CCD) detector. A number of intense Raman peaks at 140, 167, 190, 271, 332 and 493 cm-1 were observed and were interpreted as TO (140 cm-1), 1LO (167 cm-1), 2LO (332 cm-1), 3LO (493 cm-1) phonon modes and plasmon-phonon mode (190 cm-1). The presence of several phonon replicas in the Raman spectra confirms high crystal quality of the samples. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Imaging performance comparison between a LaBr3:Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera

    International Nuclear Information System (INIS)

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3:Ce scintillator continuous crystal (49x49x5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14x14x1 mm3) with 256x256 square pixels and a pitch of 55 μm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 μm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  10. Silicon detectors

    International Nuclear Information System (INIS)

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  11. Radiation detectors: needs and prospects

    International Nuclear Information System (INIS)

    Important applications for x- and γ-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI2, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties

  12. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  13. First principles modeling of grain boundaries in CdTe

    Science.gov (United States)

    Chan, Maria K. Y.; Sen, Fatih; Buurma, Christopher; Paulauskas, Tadas; Sun, Ce; Kim, Moon; Klie, Robert

    The role of extended defects is of significant interest for semiconductors, especially photovoltaics since energy conversion efficiencies are often affected by such defects. In particular, grain boundaries in CdTe photovoltaics are enigmatic since the achievable efficiencies of CdTe photovoltaics are higher in polycrystalline devices as compared to single crystalline devices. Yet, despite recent advances, the efficiency of poly-CdTe devices are still substantially below the theoretical maximum. We carry out an atomistic-level study using Scanning Transmission Electron Microscopy (STEM), together with first principles density functional theory (DFT) modeling, in order to understand the properties of specific bicrystals, i.e. artificial grain boundaries, constructed using wafer bonding. We discuss examples of bicrystals, including some involving large scale DFT calculations, and trends in defect and electronic properties. This work was funded by DOE SunShot BRIDGE program.

  14. Dependence of CdTe response of bias history

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R.; Sasala, R.A.; Eisgruber, I.L. [Colorado State Univ., Boulder, CO (United States)

    1995-11-01

    Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependent effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.

  15. Poly CdTe thin films solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Marfaing, Y.

    1982-01-01

    CdTe is potentially one of the most interesting materials for the photovoltaic conversion of solar energy. The width of its forbidden band of 1.5 eV puts it to the maximum of the theoretical yield curve (24%). Its high coefficient of optical absorption in the main band allows the use of thin films (2 to 3 microns). It is appropriate for production of thin polycristalline films with good optical and photoelectrical properties, which is probably due to its ionic character. The goal of the research performed as part of this contract is to determine the optimum conditions for the use of CdTe as photovoltaic converter. The authors think that the virtual efficiency of this material calls for confirmation and evidence provided by a systematic and profound investigation.

  16. MicroCT with energy-resolved photon-counting detectors

    OpenAIRE

    Wang, X.; Meier, D.; Mikkelsen, S.; Maehlum, G E; Wagenaar, D J; Tsui, BMW; Patt, B E; Frey, E. C.

    2011-01-01

    The goal of this paper was to investigate the benefits that could be realistically achieved on a microCT imaging system with an energy-resolved photon-counting x-ray detector. To this end, we built and evaluated a prototype microCT system based on such a detector. The detector is based on cadmium telluride (CdTe) radiation sensors and application-specific integrated circuit (ASIC) readouts. Each detector pixel can simultaneously count x-ray photons above six energy thresholds, providing the c...

  17. Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

    International Nuclear Information System (INIS)

    Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS

  18. Highly luminescent water-soluble CdTe quantum dots

    OpenAIRE

    Wuister, SF; Swart, A.N.; van Driel, F; Hickey, SG; Donega, CD; Swart, Ingmar

    2003-01-01

    Colloidal CdTe quantum dots prepared in TOP/DDA (trioctylphosphine/dodecylamine) are transferred into water by the use of aminoethanethiol.HCl (AET) or mercaptopropionic acid (MPA). This results in an increase in the photoluminescence quantum efficiency and a longer exciton lifetime. For the first time, water-soluble semiconductor nanocrystals presenting simultaneously high band-edge photoluminescence quantum efficiencies (as high as 60% at room temperature), monoexponential exciton decays, a...

  19. Determining energy production of CdTe photovoltaic system

    OpenAIRE

    Virtič, Peter; Šlamberger, Jan

    2015-01-01

    This paper presents a method for determining energy production of Cadmium-Telluride photovoltaic system, which has a different working performance than the most used Silicon photovoltaic systems. The main difference is sensitivity to the temperature and the solar irradiance. The CdTe cells are less sensitive to the temperature and in contrast to the Si Cells they have a higher efficiency at lower irradiance.

  20. CdTe Nanowires studied by Transient Absorption Microscopy

    Directory of Open Access Journals (Sweden)

    Kuno M.

    2013-03-01

    Full Text Available Transient absorption measurements were performed on single CdTe nanowires. The traces show fast decays that were assigned to charge carrier trapping at surface states. The observed power dependence suggests the existence of a trap-filling mechanism. Acoustic phonon modes were also observed, which were assigned to breathing modes of the nanowires. Both the fundamental breathing mode and the first overtone were observed, and the dephasing times provide information about how the nanowires interact with their environment.

  1. Optical modeling of graphene contacted CdTe solar cells

    Science.gov (United States)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  2. Challenges in p-type Doping of CdTe

    Science.gov (United States)

    McCoy, Jedidiah; Swain, Santosh; Lynn, Kelvin

    We have made progress in defect identification of arsenic and phosphorous doped CdTe to understand the self-compensation mechanism which will help improve minority bulk carrier lifetime and net acceptor density. Combining previous measurements of un-doped CdTe, we performed a systematic comparison of defects between different types of crystals and confirmed the defects impacting the doping efficiency. CdTe bulk crystals have been grown via vertical Bridgman based melt growth technique with varying arsenic and phosphorous dopant schemes to attain p-type material. Furnace temperature profiles were varied to influence dopant solubility. Large carrier densities have been reproducibly obtained from these boules indicating successful incorporation of dopants into the lattice. However, these values are orders of magnitude lower than theoretical solubility values. Infrared Microscopy has revealed a plethora of geometrically abnormal second phase defects and X-ray Fluorescence has been used to identify the elemental composition of these defects. We believe that dopants become incorporated into these second phase defects as Cd compounds which act to inhibit dopant solubility in the lattice.

  3. Studium vlastností CdTe senzorů

    OpenAIRE

    Vašíček, Martin

    2011-01-01

    Tato bakalářská práce se zabývá studiem vlastností CdTe detektorů. Popisuje analýzu transportních a šumových charakteristik vzorků CdTe při různých teplotách. Vyhodnocení získaných výsledků dokazuje, že se rozhraní CdTe chová jako dvojice antisériově zapojených diod. Průběhy VA charakteristik se vyznačují lineárním nebo lehce exponenciálním růstem. Při vzrůstající teplotě roste i vodivost vzorků. Měření prokázala rozdíl vodivosti testovaných vzorků při stejné teplotě. Dále je zřejmé, že v roz...

  4. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    Science.gov (United States)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  5. Needle Type Solid State Detectors for In-Vivo Measurement of Tracer Activity

    International Nuclear Information System (INIS)

    A set of miniature detector probes for in-vivo-measurement of beta and gamma tracer activity is described. The probes use a lithium-compensated p-i-n silicon detector as sensing element. The standard 'needle probe' contains a cylindrical detector 0.9 mm in diameter and 3 mm long, enclosed in a stainless steel tube 1.1 mm in outer diameter and with walls 0. 05 mm thick. For particular applications several modified types have been developed: probes with larger sensing elements, probes with extra thin walls for low-energy beta detection, probes with two or three sensing elements in the same needle and probes containing a movable sensing element. This report describes the construction and the properties of the different needle probes

  6. Needle Type Solid State Detectors for In-Vivo Measurement of Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A. [AB Atomenergi, Nykoeping (Sweden); Wolgast, W. [Univ. of Uppsala (Sweden). Inst. of Physiology and Medical Biophysics

    1970-07-15

    A set of miniature detector probes for in-vivo-measurement of beta and gamma tracer activity is described. The probes use a lithium-compensated p-i-n silicon detector as sensing element. The standard 'needle probe' contains a cylindrical detector 0.9 mm in diameter and 3 mm long, enclosed in a stainless steel tube 1.1 mm in outer diameter and with walls 0. 05 mm thick. For particular applications several modified types have been developed: probes with larger sensing elements, probes with extra thin walls for low-energy beta detection, probes with two or three sensing elements in the same needle and probes containing a movable sensing element. This report describes the construction and the properties of the different needle probes.

  7. Radiation hard position-sensitive cryogenic silicon detectors the Lazarus effect

    CERN Document Server

    Palmieri, V G; Bell, W H; Berglund, P; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, Mara; Buontempo, S; Casagrande, L; Chapuy, S; Cindro, V; D'Ambrosio, N; Via, D; Devine, S R H; Dezillie, B; Dimcovski, Zlatomir; Eremin, V V; Esposito, A P; Granata, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Janos, S; Jungermann, L; Konorov, I; Li, Z; Lourenço, C; Mikuz, M; Niinikoski, T O; O'Shea, V; Pagano, S; Paul, S; Pirollo, S; Pretzl, Klaus P; Rato-Mendes, P; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Verbitskaya, E; Watts, S; Zavrtanik, M

    2000-01-01

    The discovery of the so-called Lazarus effect, namely the recovery of the charge collection efficiency (CCE) of irradiated silicon detectors by means of cryogenic cooling has entailed an increasing interest in the behavior of silicon detectors at cryogenic temperatures. We have measured the CCE of a silicon p-i-n diode detector previously irradiated with an equivalent fluence of 1*10/sup 15/ n/cm/sup 2/ neutrons of 1 MeV energy. The charge collection efficiency has been measured at 77 K, showing that the low- temperature operation considerably decreases the bias current. This is also the case when forward voltage bias is applied, which then becomes a suitable option. In this condition, the sample shows a charge collection efficiency in excess of 65% at 250 V corresponding to a most probable signal for a minimum ionizing particle of 21000e /sup /. (6 refs).

  8. Pixellated CdZnTe detector for emission/transmission computed tomography

    International Nuclear Information System (INIS)

    A small pixellated CdZnTe array is tested for suitability in a prototype SPECT system designed to acquire both emission and transmission data. Determining the optimum contact design and obtaining performance estimates of single photon acquisition are the primary focus. Flood field and collimated 57Co sources irradiated the 16 pixel array (5 mm thick and 1.5 mm pixels) to determine photopeak efficiencies and detector response with different event collection techniques. Intrinsic full energy peak efficiency averaged 72% for an 18 keV acceptance window. A small irradiation spot scanned an array region, revealing detector response from nearby pixels. Post processing spectra compare coincident and anti-coincident acquisition. Additionally, current mode tests compare linearity with a CdWO4/Si p-i-n detector

  9. A large surface X-ray camera based on XPAD3/CdTe single chip hybrids

    Science.gov (United States)

    Cassol, F.; Blanc, N.; Bompard, F.; Boudet, N.; Boursier, Y.; Buton, C.; Clémens, J.-C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Dupont, M.; Graber-Bolis, J.; Hustache, S.; Morel, C.; Perez-Ponce, H.; Portal, L.; Vigeolas, E.

    2015-11-01

    The XPAD3 chip bump-bonded to a Si sensor has been widely used in preclinical micro-computed tomography and in synchrotron experiments. Although the XPAD3 chip is linear up to 60 keV, the performance of the XPAD3/Si hybrid detector is limited to energies below 30 keV, for which detection efficiencies remain above 20%. To overcome this limitation on detection efficiency in order to access imaging at higher energies, we decided to develop a camera based on XPAD3 single chips bump-bonded to high-Z CdTe sensors. We will first present the construction of this new camera, from the first tests of the single chip hybrids to the actual mechanical assembly. Then, we will show first images and stability tests performed on the D2AM beam line at ESRF synchrotron facility with the fully assembled camera.

  10. A large surface X-ray camera based on XPAD3/CdTe single chip hybrids

    International Nuclear Information System (INIS)

    The XPAD3 chip bump-bonded to a Si sensor has been widely used in preclinical micro-computed tomography and in synchrotron experiments. Although the XPAD3 chip is linear up to 60 keV, the performance of the XPAD3/Si hybrid detector is limited to energies below 30 keV, for which detection efficiencies remain above 20%. To overcome this limitation on detection efficiency in order to access imaging at higher energies, we decided to develop a camera based on XPAD3 single chips bump-bonded to high-Z CdTe sensors. We will first present the construction of this new camera, from the first tests of the single chip hybrids to the actual mechanical assembly. Then, we will show first images and stability tests performed on the D2AM beam line at ESRF synchrotron facility with the fully assembled camera

  11. Application of a CdTe gamma-ray spectrometer to remote characterization of high-level radioactive waste tanks

    Energy Technology Data Exchange (ETDEWEB)

    Keele, B.D.; Addleman, R.S.; Blewett, G.R.; McClellan, C.S.; Subrahmanyam, V.B.; Troyer, G.L.

    1991-10-01

    Small, shielded cadmium telluride (CdTe) semiconductor gamma-ray detectors have been used for in situ radiological characterization of underground high-level radioactive waste tanks. Remote measurements up to 700 R/h have been made in gamma radiation fields. Spectral data have been used to generate qualitative and quantitative radionuclide profiles of high-level radioactive waste tanks. Two electronic spectral enhancement techniques (pulse risetime discrimination and pulse risetime compensation) have been used in order to measure trace isotopes in the presence of large amounts of {sup 137}Cs. Spectral resolution better than 1.5% FWHM for the {sup 137}Cs 662 keV photopeak has been obtained. 4 refs., 7 figs.

  12. Ionization detector

    International Nuclear Information System (INIS)

    A novel ionization detector for use in X-ray tomography is described in detail. To achieve the ultimate resolution, the use of small detectors is necessary and, for ionization detectors, this implies using xenon gas at high pressure. Conventional small detectors can suffer from ''bowing'' but the present design overcomes their problems. (U.K.)

  13. Temperature-dependent photoluminescence of highly luminescent water-soluble CdTe quantum dots

    Institute of Scientific and Technical Information of China (English)

    Ji Wei Liu; Yu Zhang; Cun Wang Ge; Yong Long Jin; Sun Ling Hu; Ning Gu

    2009-01-01

    Highly luminescent water-soluble CdTe quantum dots (QDs) have been synthesized with an electrogenerated precursor. The obtained CdTe QDs can possess good crystallizability, high quantum yield (QY) and favorable stability. Furthermore, a detection system is designed firstly for the investigation of the temperature-dependent PL of the QDs.

  14. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  15. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd2+. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals

  16. The interaction of laser generated methyl radicals with Cd, Te, and CdTe surfaces

    International Nuclear Information System (INIS)

    The mechanism of the interaction of methyl radicals with Cd, Te, and CdTe surfaces has been studied in ultrahigh vacuum by Auger electron spectroscopy and thermal desorption mass spectrometry. Methyl radicals generated by the laser photodissociation of acetone at 193 nm efficiently etch both Te and Te-rich CdTe surfaces. However, there is no evidence for reaction of methyl radicals with Cd or stoichiometric CdTe. A temperature dependence in the rate of methyl radical etching of Te-rich CdTe is related to a competition between acetone scavenging of radicals on the surface and reaction of radicals to form volatile metalorganics. Acetone itself has a small but finite reaction probability with Te and Te-rich CdTe surfaces

  17. Vapor phase epitaxy of CdTe on sapphire and GaAs

    Science.gov (United States)

    Kasuga, Masanobu; Futami, Hiroyuki; Iba, Yoshihiro

    1991-12-01

    CdTe films were deposited on three kinds of sapphire substrate and two kinds of GaAs substrate by open tube vapor transport. X-ray Laue diffraction study showed that CdTe(111) film grew on every kind of sapphire substrate used, i.e. on the (0001) basal plane, the (11 overline20)A plane and the (1 overline102)R plane, and that there exist a few degrees of tilt angel between CdTe(111) and the lattice plane of each substrate. The process of making the tilt angle may be explained by the atomistic mismatch model of the Cd and Al arrangement which is projected on the film-substrate interface. On GaAs(100), either CdTe(111) or CdTe(100) was obtained, whereas only a twin crystalline film was obtained on GaAs(111). These results are also consistent with the mismatch model of Cd and Ga atoms.

  18. Homo-epitaxial growth of CdTe by sublimation under low pressure

    Science.gov (United States)

    Yoshioka, Yasushi; Yoda, Hiroki; Kasuga, Masanobu

    1991-12-01

    A new method to obtain a twin-free single crystal of CdTe on a CdTe substrate by sublimation is described. When CdTe(111)A substrates were employed for the homo-epitaxial growth of CdTe, twin crystals were frequently obtained. The substrate of CdTe(211)A and (211)B, however, gave no twins resulting in single crystals of high quality. The difference may come from the existence of many steps, sufficient to suppress two-dimensional nucleation and to promote step flow mechanism. To obtain twin-free films, therefore, a fairly large tilt angle of the substrate from a singular plane and a fairly low supersaturation are essential.

  19. NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

    Energy Technology Data Exchange (ETDEWEB)

    2016-05-01

    NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costs less than fossil fuels.

  20. Growth of CdTe thin films on graphene by close-spaced sublimation method

    International Nuclear Information System (INIS)

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400 nm/min with a bandgap energy of 1.45–1.49 eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes

  1. Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

    International Nuclear Information System (INIS)

    Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd2+. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA2−. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd2+. ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

  2. The Potential of Hybrid Pixel Detectors in the Search for the Neutrinoless Double-Beta Decay of Cd-116

    OpenAIRE

    Michel, Thilo; Gleixner, Thomas; Durst, Jürgen; Filipenko, Mykhaylo; Geisselsoeder, Stefan

    2013-01-01

    We investigated the potential of the energy resolving hybrid pixel detector Timepix contacted to a CdTe sensor layer for the search for the neutrinoless double-beta decay of Cd-116. We found that a CdTe sensor layer with 3 mm thickness and 165 mu m pixel pitch is optimal with respect to the effective Majorana neutrino mass (m(beta beta)) sensitivity. In simulations, we were able to demonstrate a possible reduction of the background level caused by single electrons by approximately 75% at a sp...

  3. The Potential of Hybrid Pixel Detectors in the Search for the Neutrinoless Double-Beta Decay of 116Cd

    OpenAIRE

    Mykhaylo Filipenko; Stefan Geißelsöder; Jürgen Durst; Thomas Gleixner; Thilo Michel

    2013-01-01

    We investigated the potential of the energy resolving hybrid pixel detector Timepix contacted to a CdTe sensor layer for the search for the neutrinoless double-beta decay of Cd. We found that a CdTe sensor layer with 3 mm thickness and 165 μm pixel pitch is optimal with respect to the effective Majorana neutrino mass (mββ) sensitivity. In simulations, we were able to demonstrate a possible reduction of the background level caused by single electrons by approximately 75% at a specific backgrou...

  4. Automatic Control System for the High Pressure CdTe Crystal Growth Furnace

    Directory of Open Access Journals (Sweden)

    Petr Praus

    2006-08-01

    Full Text Available CdTe and (CdZnTe bulk single crystals have been widely used as substrates for MBE and LPE epitaxy of infrared (HgCdTe as well as gamma- and X-ray detectors. The Cd1-xZnxTe (x = 0.04-0.1 single crystals with diameter up to 100 mm and height at most 40 mm were prepared in our laboratory in a vertical arrangement by gradual cooling of the melt (the Vertical Gradient Freezing method. Achievement of excellent crystal quality required full control of Cd pressure during the growth process and application of high Cd pressures (up to 4 bar at growth temperature. An electronic control system was designed to control both temperature and internal pressure of two zones CZT crystal growth furnace by using two high performance PID controllers/setpoint programmers. Two wire current loop serial communication bus was used for the data exchange and computer control of the furnace electronics setup. Control software was written to supervise the crystal growth process and to collect all important data and parameters.

  5. Dewetted growth of CdTe in microgravity (STS-95)

    International Nuclear Information System (INIS)

    Two CdTe crystals had been grown in microgravity during the STS-95 mission. The growth configuration was dedicated to obtain dewetting of the crystals and to achieve high quality material. Background for the performed experiments was based on the theory of the dewetting and previous experience. The after flight characterization of the crystals has demonstrated existence of the dewetting areas of the crystals and their improved quality regarding the earth grown reference sample. The samples had been characterized by EDAX, Synchrotron X-ray topography, Photoluminescence and Optical and IR microscopy. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Dewetted growth of CdTe in microgravity (STS-95)

    Energy Technology Data Exchange (ETDEWEB)

    Fiederle, M.; Babentsov, V.; Benz, K.W. [Freiburger Materialforschungszentrum, D-79104 Freiburg (Germany); Duffar, T. [EPM, ENSHMG BP95 F-38402 Saint Martin d' Heres (France); Dusserre, P. [DTEN, Commissariat a l' Energie Atomique, 17, rue des Martyrs, F-38054 Grenoble (France); Corregidor, V.; Dieguez, E. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, E-28034 Madrid (Spain); Delaye, P.; Roosen, G. [Laboratoire Charles Fabry, Institut d' Optique Theorique et Appliquee, 91403 Orsay Cedex (France); Chevrier, V.; Launay, J.C. [Institut de Chimie de la Matiere Condensee de Bordeaux, ICMCB-CNRS-UPR 9048, 87 avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France)

    2004-06-01

    Two CdTe crystals had been grown in microgravity during the STS-95 mission. The growth configuration was dedicated to obtain dewetting of the crystals and to achieve high quality material. Background for the performed experiments was based on the theory of the dewetting and previous experience. The after flight characterization of the crystals has demonstrated existence of the dewetting areas of the crystals and their improved quality regarding the earth grown reference sample. The samples had been characterized by EDAX, Synchrotron X-ray topography, Photoluminescence and Optical and IR microscopy. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Study of fluorination of CdTe surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sugiyama, Koichi; Mori, Koichi; Miyake, Hideto (Dept. of Electrical Engineering, Mie Univ., Tsu-shi (Japan))

    1991-03-20

    In this paper we deal with fluorination of CdTe(100) single crystals in a 2% fluorine-98% nitrogen atmosphere for different temperatures and times. The fluorination process has been investigated by the use of microscopy, X-ray diffraction, energy-dispersive X-ray microanalysis, X-ray photoelectron spectroscopy and Auger electron spectroscopy measurements. Three temperature regions are found to be distinguished for the fluorination process. The fluorinated layer is mainly composed of CdF{sub 2} crystals, but an intermediate layer is shown to exist beneath the fluoride layer except for fluorination at low temperature. The formation mechanisms of the fluoride and intermediate layers are discussed. (orig.).

  8. INCORPORATION DU PHOSPHORE DANS CdTe PAR RECUIT LASER

    OpenAIRE

    Uzan, C.; Legros, R.; Marfaing, Y.

    1983-01-01

    La méthode du recuit laser a été utilisée pour incorporer du phosphore dans CdTe à partir d'une couche de Cd3P2 déposée en surface. La caractérisation par photoluminescence et mesure de profil à l'analyseur ionique montre le caractère actif du phosphore introduit et permet d'évaluer à 1018cm-3 la concentration atteinte à 1 µm de profondeur.

  9. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  10. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  11. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

    2014-10-25

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  12. Comparison of NaI(T1), CdTe, and HgI2 surgical probes: effect of scatter compensation on probe performance.

    Science.gov (United States)

    Kwo, D P; Barber, H B; Barrett, H H; Hickernell, T S; Woolfenden, J M

    1991-01-01

    Spatial variation in the background source distribution makes tumor detection difficult for single-detector probes. Using a single energy window that brackets the photopeak helps discriminate against background events dominated by Compton scattering. Another approach is to use the information provided by an additional window in the Compton region. The performances of NaI(T1), CdTe, and HgI2 surgical probes have been compared under realistic simulations of a tumor-staging procedure using optimal single-sided energy windows and a two-window scatter-subtraction technique. Results showed that despite the differences in energy resolution of the detectors, the performances of the probes in a variable background were similar when optimal single energy windows were used. When the background variations were large, using information provided by a second window improved probe performance. PMID:1870479

  13. Research on single-crystal CdTe solar cells

    Science.gov (United States)

    Borrego, J. M.; Ghandhi, S. K.

    1987-10-01

    This report outlines two years of work on the growth and characterization of single-crystal CdTe layers, to explore their potential for high-efficiency solar cells. It was demonstrated that high-quality layers can be grown by organometallic vapor phase epitaxy (OMVPE), whose photoluminescence peak has a FWHM of 5.8 MeV, the lowest value for them yet achieved. CdTe layers were extrinsically doped both n- and p-type with indium and arsenic, respectively. The doping level achieved for p-type is the highest yet reported in the literature, achieved for the first time in an OMVPE system. A hole lifetime of 2.0 microns was measured. In the n-type material, five deep levels were isolated; their capture cross section, energy level, and concentration were determined. A thermodynamic analysis was made to identify their defect character. Both Schottky and p-n junction devices were produced on these layers. The diode characteristics were superior to those of GaAs so this is a potentially superior material for solar cells.

  14. Enhanced Specificity of Multiplex Polymerase Chain Reaction via CdTe Quantum Dots

    OpenAIRE

    Liang Gaofeng; Ma Chao; Zhu Yanliang; Li Shuchun; Shao Youhua; Wang Yong; Xiao Zhongdang

    2010-01-01

    Abstract Nanoparticles were recently reported to be able to improve both efficiency and specificity in polymerase chain reaction (PCR). Here, CdTe QDs were introduced into multi-PCR systems. It was found that an appropriate concentration of CdTe QDs could enhance the performance of multi-PCR by reducing the formation of nonspecific products in the complex system, but an excessive amount of CdTe QDs could suppress the PCR. The effects of QDs on PCR can be reversed by increasing the polymerase ...

  15. Aqueous Synthesis of CdTe Quantum Dot Using Dithiol-Functionalized Ionic Liquid

    Directory of Open Access Journals (Sweden)

    Suk Young Choi

    2012-01-01

    Full Text Available We report on an aqueous synthesis of cadmium telluride (CdTe nanocrystals by using dithiol-functionalized ionic liquids (dTFILs. The dTFILs were designed to have dithiol and vinylimidazolium functional groups and used as a ligand molecule of CdTe quantum dot (QD to utilize the bidendate chelate interaction afforded by the dithiol groups of dTFILs. The photoluminescence quantum yield of dTFIL-capped CdTe QDs reached up to ~40%, and their luminescent property was maintained for 8 weeks, suggesting an improved stability in water phase. This approach will provide a new synthetic route to the water soluble QDs.

  16. Preparation of CdTe nanocrystal-polymer composite microspheres in aqueous solution by dispersing method

    Institute of Scientific and Technical Information of China (English)

    LI Minjie; WANG Chunlei; HAN Kun; YANG Bai

    2005-01-01

    Highly fluorescent CdTe nanocrystals were synthesized in aqueous solution, and then processible CdTe nanocrystal-polymer composites were fabricated by coating the aqueous nanocrystals with copolymers of styrene and octadecyl-p-vinyl-benzyldimethylammonium chloride (SOV- DAC) directly. A dichloromethane solution of CdTe nano- crystal-polymer composites was dispersed in the aqueous solution of poly (vinyl alcohol) (PVA) generating highly fluorescent microspheres. Experimental parameters such as the concentration of nanocrystal-polymer composites, the concentration of PVA, and stirring speed which had important effect on the preparation of the microspheres were investigated in detail with fluorescent microscope characterization.

  17. Structural and optical characterization of CdTe quantum dots thin films

    International Nuclear Information System (INIS)

    Highlights: • CdTe QDs are prepared by hot injection method. • Thermally evaporated CdTeQDs thin films were prepared. • Structural characterization and analysis were done. • Optical parameters were studied. - Abstract: Cadmium telluride quantum dots (CdTe QDs) have been synthesized using hot-injection chemical technique. The CdTe QDs thin films were deposited onto optical flat fused quartz substrates using thermal evaporation technique. The CdTe QDs powder and the as deposited films were characterized using X-ray diffraction and high resolution transmission electron microscope (HRTEM). The X-ray analysis shows that both CdTe QDs powder and the as deposited films crystallize in cubic zinc-blende type structure with lattice parameter 6.46 Å and 6.45 Å, respectively. The X-ray calculation shows that the average crystallite size of the as deposited CdTe QDs films varied from 1.1 nm for the powder to 2.3 nm for the thin film. The HRTEM examination of the as deposited films shows that the average particle size vary from 2.5 nm for the powder to 2.7 nm for the thin film. For the as deposited films, the dependence of (αhν)2 on the incident photon energy indicates that the optical transitions within the film are allowed direct with energies observed at Eg1≅2eV and Eg2≅2.3eV which attributed to quantum confinement effect. The optical band gap increases from 1.5 eV for microstructure CdTe to 2 eV for nanostructure quantum dots which corresponding to wavelength(620 nm) so it is a great benefit to use CdTe quantum dots as solar harvesting devices application in solar spectrum region (400–800 nm). Urbach energy is calculated and found to be 360 meV which is higher than microstructure CdTe. The refractive index and refractive index dispersion of the as deposited CdTe QDs film has been calculated from transmission and reflection spectra. It has been found that the refractive index is reduced from (2.66) for microstructure CdTe to be (1.7) for CdTe quantum dots

  18. Selective growth of CdTe on patterned CdTe/Si(211)

    OpenAIRE

    Seldrum, T.; Bommena, R.; Samain, Louise; Sivananthan, S.; Sporken, R.; Dumont, J.

    2008-01-01

    The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTe/As/Si(211). Photoemission microscopy was used as the main tool to study selective growth. This is very powerful because Si or SiO2 can be very easily distinguished from areas covered with even small amounts of CdTe due to contrast from work function differences. It was found that CdTe grows on CdTe without sticki...

  19. Ultra low density of CdTe quantum dots grown by MBE

    OpenAIRE

    Kobak, J.; Rousset, J. -G.; Rudniewski, R.; Janik, E.; S\\lupiński; Kossacki, P.; Golnik, A.; Pacuski, W.

    2012-01-01

    This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer thickness. Photoluminescence (PL) measurements at low temperature confirms that both methods can be used for significant reduction of QDs density from 1010QD/cm2 to 107-108QD/cm2. For very low QDs density, identification of all QDs lines observed in the spectr...

  20. Shape Control of CdTe Nanocrystals: Influence of the Solvent Composition and Ligand Effects

    OpenAIRE

    Xiaoping Jin; Jürgen Parisi; Joanna Kolny-Olesiak

    2013-01-01

    CdTe nanocrystals were synthesized by the hot-injection method with a mixture of oleylamine and octadecene as a solvent. The influence of the composition of the solvent and of the injection solution on the shape of CdTe nanoparticles was investigated. Various shapes of CdTe nanocrystals, such as nanodots, nanorods, multipods, and nanowires, could be obtained by changing the reaction conditions. Tuning the reactivity of both the cadmium and the tellurium precursors at the same time was found t...