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Sample records for cdte detectors clinical

  1. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    Science.gov (United States)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  2. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  3. Digital pulse-shape processing for CdTe detectors

    CERN Document Server

    Bargholtz, C; Maartensson, L; Wachtmeister, S

    2001-01-01

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  4. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  5. Study on temperature coefficient of CdTe detector used for X-rays detection

    CERN Document Server

    Guo, Si-Ming; Zhang, Jian; Li, Xu-Fang; Liu, Cong-Zhan; Zhang, Shuai; Li, Cheng-Ze; Huo, Bin-Bin; Liao, Zhen-Yu

    2016-01-01

    The temperature of the working environment is a key factor in determining the properties of semiconductor detectors, and it affects the absolute accuracy and stability of the standard detector. In order to determine the temperature coefficient of CdTe detector used for X-rays detection, a precise temperature control system was designed. In this experiment, detectors and radiographic source were set inside the thermostat with temperature of 0-40 Celsius degree, so that the temperature can be regulated for the test of the temperature coefficient of CdTe detector. Studies had shown that, with the increase of the temperature, the energy resolution and detection efficiency of the CdTe detector would deteriorate, and under 10 Celsius degree the detectors have better performance with the 8 keV X-rays.

  6. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  7. The use of CdTe detectors for dental X-ray spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Marcus Aurelio P. dos; Fragoso, Maria da Conceicao F.; Oliveira, Mercia L.; Lima, Ricardo de A.; Hazin, Clovis A. [Centro Regional de Ciencias Nucleares (CRCN/CNEN-PE), Recife, PE (Brazil)]. E-mails: masantos@cnen.gov.br; mariacc05@yahoo.com.br; mercial@cnen.gov.br; ralima@cnen.gov.br; chazin@cnen.gov.br

    2007-07-01

    he cadmium telluride (CdTe) semiconductor detector provides high detection efficiency for use in the diagnostic x-rays energy range, because of the high atomic number and high density of the crystal. Moreover, it has the great advantage of working at room temperature, in contrast to the germanium detector, which operates in liquid nitrogen temperature. The CdTe detector has been utilized in diagnostic x-ray spectroscopy, but only scarce information about its use in dental X-ray beams has been published. In this way, a portable 3x3x1 mm{sup 3} CdTe solid state detector (XR-100T CdTe by Amptek, Inc.) with tungsten pinhole collimators, alignment device and associated software was utilized in this work for measuring the photon spectra in the dental x-ray kVp range. A single-phase dental unit with adjustable kVp and mA was employed and the x-ray spectra were experimentally determined at 50, 60 and 70 kVp with 0.5 mA tube current. The pulse height distribution obtained with this detector, however, does not represent the 'true' photon spectra. For this reason, a stripping procedure was implemented to correct the distribution in order to determine the real photon spectra. The x-ray spectra obtained with the CdTe detector were compared with the ones measured with a high-purity germanium detector (EGP200-13-TR by Eurisys Mesures). The reasonable agreement between the results obtained with both detectors for the 50 to 70 keV range show that CdTe detectors can be utilized for dental x-ray spectrometry. (author)

  8. Characterization and simulation of a CdTe detector for use in PET

    OpenAIRE

    Ariño Estrada, Gerard; Chmeissani, Mokhtar; Lorenzo, Gianluca De

    2012-01-01

    The Voxel Imaging PET (VIP) Path nder project got the 4 year European Research Council FP7 grant in 2010 to prove the feasibility of using CdTe detectors in a novel conceptual design of PET scanner. The work presented in this thesis is a part of the VIP project and consists of, on the one hand, the characterization of a CdTe detector in terms of energy resolution and coincidence time resolution and, on the other hand, the simulation of the setup with the single detector in order to extend the...

  9. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors

    OpenAIRE

    Y Calderón; Chmeissani, M.; Kolstein, M.; De Lorenzo, G.

    2014-01-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm2 area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm3. The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(G...

  10. High-resolution CdTe detectors with application to various fields (Conference Presentation)

    Science.gov (United States)

    Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

    2016-10-01

    High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

  11. Imaging of Ra-223 with a small-pixel CdTe detector

    Science.gov (United States)

    Scuffham, J. W.; Pani, S.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.; Cernik, R. J.

    2015-01-01

    Ra-223 Dichloride (Xofigo™) is a promising new radiopharmaceutical offering survival benefit and palliation of painful bone metastases in patients with hormone-refractory prostate cancer [1]. The response to radionuclide therapy and toxicity are directly linked to the absorbed radiation doses to the tumour and organs at risk respectively. Accurate dosimetry necessitates quantitative imaging of the biodistribution and kinetics of the radiopharmaceutical. Although primarily an alpha-emitter, Ra-223 also has some low-abundance X-ray and gamma emissions, which enable imaging of the biodistribution in the patient. However, the low spectral resolution of conventional gamma camera detectors makes in-vivo imaging of Ra-223 challenging. In this work, we present spectra and image data of anthropomorphic phantoms containing Ra-223 acquired with a small-pixel CdTe detector (HEXITEC) [2] with a pinhole collimator. Comparison is made with similar data acquired using a clinical gamma camera. The results demonstrate the advantages of the solid state detector in terms of scatter rejection and quantitative accuracy of the images. However, optimised collimation is needed in order for the sensitivity to rival current clinical systems. As different dosage levels and administration regimens for this drug are explored in current clinical trials, there is a clear need to develop improved imaging technologies that will enable personalised treatments to be designed for patients.

  12. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  13. Response functions of Si(Li), SDD and CdTe detectors for mammographic x-ray spectroscopy.

    Science.gov (United States)

    Tomal, A; Cunha, D M; Antoniassi, M; Poletti, M E

    2012-07-01

    In this work, the energy response functions of Si(Li), SDD and CdTe detectors were studied in the mammographic energy range through Monte Carlo simulation. The code was modified to take into account carrier transport effects and the finite detector energy resolution. The results obtained show that all detectors exhibit good energy response at low energies. The most important corrections for each detector were discussed, and the corrected mammographic x-ray spectra obtained with each one were compared. Results showed that all detectors provided similar corrected spectra, and, therefore, they could be used to accurate mammographic x-ray spectroscopy. Nevertheless, the SDD is particularly suitable for clinic mammographic x-ray spectroscopy due to the easier correction procedure and portability.

  14. Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform

    CERN Document Server

    Kikawa, T; Hiraki, T; Nakaya, T

    2011-01-01

    Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

  15. Simulation of active-edge pixelated CdTe radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Duarte, D.D., E-mail: diana.duarte@stfc.ac.uk [STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Lipp, J.D.; Schneider, A.; Seller, P.; Veale, M.C.; Wilson, M.D. [STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Baker, M.A.; Sellin, P.J. [Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2016-01-11

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  16. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors.

    Science.gov (United States)

    Cassol, F; Portal, L; Graber-Bolis, J; Perez-Ponce, H; Dupont, M; Kronland, C; Boursier, Y; Blanc, N; Bompard, F; Boudet, N; Buton, C; Clémens, J C; Dawiec, A; Debarbieux, F; Delpierre, P; Hustache, S; Vigeolas, E; Morel, C

    2015-07-21

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  17. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung [Yonsei University, Wonju (Korea, Republic of)

    2012-07-15

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radio pharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  18. CdTe detector efficiency calibration using thick targets of pure and stable compounds

    Science.gov (United States)

    Chaves, P. C.; Taborda, A.; Reis, M. A.

    2012-02-01

    Quantitative PIXE measurements require perfectly calibrated set-ups. Cooled CdTe detectors have good efficiency for energies above those covered by Si(Li) detectors and turn on the possibility of studying K X-rays lines instead of L X-rays lines for medium and eventually heavy elements, which is an important advantage in various cases, if only limited resolution systems are available in the low energy range. In this work we present and discuss spectra from a CdTe semiconductor detector covering the energy region from Cu (K α1 = 8.047 keV) to U (K α1 = 98.439 keV). Pure thick samples were irradiated with proton beams at the ITN 3.0 MV Tandetron accelerator in the High Resolution High Energy PIXE set-up. Results and the application to the study of a Portuguese Ossa Morena region Dark Stone sample are presented in this work.

  19. Growth and fabrication method of CdTe and its performance as a radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hyojeong [Korea Atomic Energy Research Institute, Jeong-eup (Korea, Republic of); Sungkyunkwan University, Suwon (Korea, Republic of); Jeong, Manhee; Kim, Hansoo; Kim, Youngsoo; Ha, Jangho [Korea Atomic Energy Research Institute, Jeong-eup (Korea, Republic of); Chai, Jong-Seo [Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-01-15

    A CdTe crystal ingot doped with 2000 ppm of Cl was grown by using the low-pressure Bridgman (LPB) method at the Korea Atomic Energy Research Institute (KAERI). A Semiconductor detector as a radiation detection sensor with a size of 7 (W) x 6.5 (D) x 2 (H) mm{sup 3} was fabricated from the CdTe ingot. In addition, the properties of the CdTe sample were observed through four kinds of experiments to analyze its performance. The resistivity was obtained as 1.41 x 10{sup 10} Ωcm by using a Keithley 6517A high-precision electrometer. The mobility-life time products for electrons and holes were 3.137 x 10{sup -}'4 cm{sup 2}/V and 4.868 x 10{sup -5} cm{sup 2}/V, respectively. Finally, we achieved a 16.8% energy resolution at 59.5 keV for the {sup 241}Am gamma-ray source. The CdTe semiconductor detector grown at KAERI has a performance good enough to detect low-energy gamma-rays.

  20. Characterization of a pixelated CdTe Timepix detector operated in ToT mode

    Science.gov (United States)

    Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

    2017-01-01

    A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55 μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241Am source, photons from a 137Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300 μm thick silicon Timepix device. The electron mobility-lifetime product (μeτe) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

  1. Fast polycrystalline CdTe detectors for bunch-by-bunch luminosity monitoring in the LHC

    CERN Document Server

    Brambilla, A; Jolliot, M; Bravin, E

    2008-01-01

    The luminosity at the four interaction points of the Large Hadron Collider (LHC) must be continuously monitored in order to provide an adequate tool for the control and optimisation of beam parameters. Polycrystalline cadmium telluride (CdTe) detectors have previously been tested, showing their high potential to fulfil the requirements of luminosity measurement in the severe environment of the LHC interaction regions. Further, the large signal yield and the fast response time should allow bunch-by-bunch measurement of the luminosity at 40 MHz with high accuracy. Four luminosity monitors with two rows of five polycrystalline CdTe detectors each have been fabricated and will be installed at both sides of the low-luminosity interaction points ALICE and LHC-b. A detector housing was specially designed to meet the mechanical constraints in the LHC. A series of elementary CdTe detectors were fabricated and tested, of which 40 were selected for the luminosity monitors. A sensitivity of 104 electrons per minimum ioni...

  2. Improvement of the sensitivity of CdTe detectors in the high energy regions

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

    1996-07-01

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  3. Energy and coincidence time resolution measurements of CdTe detectors for PET

    Science.gov (United States)

    Ariño, G.; Chmeissani, M.; De Lorenzo, G.; Puigdengoles, C.; Cabruja, E.; Calderón, Y.; Kolstein, M.; Macias-Montero, J. G.; Martinez, R.; Mikhaylova, E.; Uzun, D.

    2013-02-01

    We report on the characterization of 2 mm thick CdTe diode detector with Schottky contacts to be employed in a novel conceptual design of PET scanner. Results at -8°C with an applied bias voltage of -1000 V/mm show a 1.2% FWHM energy resolution at 511 keV. Coincidence time resolution has been measured by triggering on the preamplifier output signal to improve the timing resolution of the detector. Results at the same bias and temperature conditions show a FWHM of 6 ns with a minimum acceptance energy of 500 keV. These results show that pixelated CdTe Schottky diode is an excellent candidate for the development of next generation nuclear medical imaging devices such as PET, Compton gamma cameras, and especially PET-MRI hybrid systems when used in a magnetic field immune configuration.

  4. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  5. Imaging detector development for nuclear astrophysics using pixelated CdTe

    Science.gov (United States)

    Álvarez, J. M.; Gálvez, J. L.; Hernanz, M.; Isern, J.; Llopis, M.; Lozano, M.; Pellegrini, G.; Chmeissani, M.

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a γ-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a γ-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11×11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident γ-ray photon. First measurements of a 133Ba and 241Am source are reported here.

  6. Imaging detector development for nuclear astrophysics using pixelated CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez, J.M., E-mail: alvarez@ieec.uab.e [Institut de Ciencies de l' Espai (CSIC-IEEC), Campus UAB, E-08193 Barcelona (Spain); Galvez, J.L.; Hernanz, M.; Isern, J.; Llopis, M. [Institut de Ciencies de l' Espai (CSIC-IEEC), Campus UAB, E-08193 Barcelona (Spain); Lozano, M.; Pellegrini, G. [Centro Nacional de Microelectronica - IMB-CNM (CSIC), Campus UAB, E-08193 Barcelona (Spain); Chmeissani, M. [Institut de Fisica d' Altes Energies (IFAE), Campus UAB, E-08193 Barcelona (Spain)

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a {gamma}-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a {gamma}-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11x11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident {gamma}-ray photon. First measurements of a {sup 133}Ba and {sup 241}Am source are reported here.

  7. X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

    Science.gov (United States)

    Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

    2012-07-01

    A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

  8. Thin-film CdTe detector for microdosimetric study of radiation dose enhancement at gold-tissue interface.

    Science.gov (United States)

    Paudel, Nava Raj; Shvydka, Diana; Parsai, E Ishmael

    2016-09-08

    Presence of interfaces between high and low atomic number (Z) materials, often encountered in diagnostic imaging and radiation therapy, leads to radiation dose perturbation. It is characterized by a very narrow region of sharp dose enhancement at the interface. A rapid falloff of dose enhancement over a very short distance from the interface makes the experimental dosimetry nontrivial. We use an in-house-built inexpensive thin-film Cadmium Telluride (CdTe) photodetector to study this effect at the gold-tissue interface and verify our experimental results with Monte Carlo (MC) modeling. Three-micron thick thin-film CdTe photodetectors were fabricated in our lab. One-, ten- or one hundred-micron thick gold foils placed in a tissue-equivalent-phantom were irradiated with a clinical Ir-192 high-dose-rate (HDR) source and current measured with a CdTe detector in each case was compared with the current measured for all uniform tissue-equivalent phantom. Percentage signal enhancement (PSE) due to each gold foil was then compared against MC modeled percentage dose enhancement (PDE), obtained from the geometry mimicking the experimental setup. The experimental PSEs due to 1, 10, and 100 μm thick gold foils at the closest measured distance of 12.5μm from the interface were 42.6 ± 10.8 , 137.0 ± 11.9, and 203.0 ± 15.4, respectively. The corresponding MC modeled PDEs were 38.1 ± 1, 164 ± 1, and 249 ± 1, respectively. The experimental and MC modeled values showed a closer agreement at the larger distances from the interface. The dose enhancement in the vicinity of gold-tissue interface was successfully measured using an in-house-built, high-resolution CdTe-based photodetector and validated with MC simulations. A close agreement between experimental and the MC modeled results shows that CdTe detector can be utilized for mapping interface dose distribution encountered in the application of ionizing radiation.

  9. ASTRO-H CdTe detectors proton irradiation at PIF

    Energy Technology Data Exchange (ETDEWEB)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S. [CEA-Irfu – CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Laurent, P.; Lebrun, F. [APC Laboratory, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); Chipaux, R. [CEA-Irfu – CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Boatella Polo, C. [European Space Agency, ESTEC, Keplerlaan 1, NL-2201 AZ, Noordwijk (Netherlands); Marcinkowski, R. [Paul Scherrer Institute (PSI), Proton Irradiation Facility at Laboratory for Particle Physics, 5232 Villigen (Switzerland); Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T. [Institute of Space and Astronautical Science, JAXA, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa, 252-5210 (Japan)

    2015-07-01

    Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

  10. Imaging and spectroscopic performance studies of pixellated CdTe Timepix detector

    Science.gov (United States)

    Maneuski, D.; Astromskas, V.; Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Marchal, J.; O'Shea, V.; Stewart, G.; Tartoni, N.; Wilhelm, H.; Wraight, K.; Zain, R. M.

    2012-01-01

    In this work the results on imaging and spectroscopic performances of 14 × 14 × 1 mm CdTe detectors with 55 × 55 μm and 110 × 110 μm pixel pitch bump-bonded to a Timepix chip are presented. The performance of the 110 × 110 μm pixel detector was evaluated at the extreme conditions beam line I15 of the Diamond Light Source. The energy of X-rays was set between 25 and 77 keV. The beam was collimated through the edge slits to 20 μm FWHM incident in the middle of the pixel. The detector was operated in the time-over-threshold mode, allowing direct energy measurement. Energy in the neighbouring pixels was summed for spectra reconstruction. Energy resolution at 77 keV was found to be ΔE/E = 3.9%. Comparative imaging and energy resolution studies were carried out between two pixel size detectors with a fluorescence target X-ray tube and radioactive sources. The 110 × 110 μm pixel detector exhibited systematically better energy resolution in comparison to 55 × 55 μm. An imaging performance of 55 × 55 μm pixellated CdTe detector was assessed using the Modulation Transfer Function (MTF) technique and compared to the larger pixel. A considerable degradation in MTF was observed for bias voltages below -300 V. Significant room for improvement of the detector performance was identified both for imaging and spectroscopy and is discussed.

  11. Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

    CERN Document Server

    Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

    2011-01-01

    We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

  12. Prompt gamma and neutron detection in BNCT utilizing a CdTe detector.

    Science.gov (United States)

    Winkler, Alexander; Koivunoro, Hanna; Reijonen, Vappu; Auterinen, Iiro; Savolainen, Sauli

    2015-12-01

    In this work, a novel sensor technology based on CdTe detectors was tested for prompt gamma and neutron detection using boronated targets in (epi)thermal neutron beam at FiR1 research reactor in Espoo, Finland. Dedicated neutron filter structures were omitted to enable simultaneous measurement of both gamma and neutron radiation at low reactor power (2.5 kW). Spectra were collected and analyzed in four different setups in order to study the feasibility of the detector to measure 478 keV prompt gamma photons released from the neutron capture reaction of boron-10. The detector proved to have the required sensitivity to detect and separate the signals from both boron neutron and cadmium neutron capture reactions, which makes it a promising candidate for monitoring the spatial and temporal development of in vivo boron distribution in boron neutron capture therapy.

  13. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    Science.gov (United States)

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18)F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8.

  14. CdTe detector efficiency calibration using thick targets of pure and stable compounds

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C.; Taborda, A., E-mail: ataborda@itn.pt; Reis, M.A.

    2012-02-15

    Quantitative PIXE measurements require perfectly calibrated set-ups. Cooled CdTe detectors have good efficiency for energies above those covered by Si(Li) detectors and turn on the possibility of studying K X-rays lines instead of L X-rays lines for medium and eventually heavy elements, which is an important advantage in various cases, if only limited resolution systems are available in the low energy range. In this work we present and discuss spectra from a CdTe semiconductor detector covering the energy region from Cu (K{sub {alpha}1} = 8.047 keV) to U (K{sub {alpha}1} = 98.439 keV). Pure thick samples were irradiated with proton beams at the ITN 3.0 MV Tandetron accelerator in the High Resolution High Energy PIXE set-up. Results and the application to the study of a Portuguese Ossa Morena region Dark Stone sample are presented in this work.

  15. Digital signal processing for CdTe detectors using VXIbus data collection systems

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

    1996-07-01

    Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

  16. Development of a modular CdTe detector plane for gamma-ray burst detection below 100 keV

    OpenAIRE

    Ehanno, M.; Amoros, C.; Barret, D.; Lacombe, K.; Pons, R.; Rouaix, G.; Gevin, O.; Limousin, O.; Lugiez, F.; Bardoux, A.; Penquer, A.

    2007-01-01

    We report on the development of an innovative CdTe detector plane (DPIX) optimized for the detection and localization of gamma-ray bursts in the X-ray band (below 100 keV). DPIX is part of an R&D program funded by the French Space Agency (CNES). DPIX builds upon the heritage of the ISGRI instrument, currently operating with great success on the ESA INTEGRAL mission. DPIX is an assembly of 200 elementary modules (XRDPIX) equipped with 32 CdTe Schottky detectors (4x4 mm2, 1 mm thickness) produc...

  17. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    Science.gov (United States)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  18. CdTe and CdZnTe crystals for room temperature gamma-ray detectors

    CERN Document Server

    Franc, J; Belas, E; Grill, R; Hlidek, P; Moravec, P; Bok, J B

    1999-01-01

    CdTe(Cl) detectors from CdTe single crystals, grown by the Bridgman method from Te-rich melt, were fabricated. The quality of the detectors was tested with sup 5 sup 7 Co and sup 2 sup 4 sup 1 Am sources. In the sup 5 sup 7 Co spectrum low noise is demonstrated by the presence of a 14 keV peak and good resolution approx 7 keV (FWHM) evident from the separation of 122 and 136 keV peaks. A review is given of the state-of-the-art properties of (CdZn)Te single crystals prepared for substrates in the Institute of Physics of Charles University. The quality of samples is tested by measurements of the diffusion length of minority carriers, from which the mobility-lifetime product is evaluated. (author)

  19. Large dynamic range 64-channel ASIC for CZT or CdTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Glasser, F. E-mail: francis.glasser@cea.fr; Villard, P.; Rostaing, J.P.; Accensi, M.; Baffert, N.; Girard, J.L

    2003-08-21

    We present a customized 64-channel ASIC, named ALIX, developed in a 0.8 {mu}m CMOS technology. This circuit is dedicated to measure charges from semi-conductor X-ray detectors like Cadmium Zinc Telluride (CZT) or Cadmium Telluride CdTe. The specificity of ALIX is to be able to measure charges over a very large dynamic range (from 10 fC to 3 nC), and to store eight measurements in a very short time (from every 250 ns to a few ms). Up to eight images are stored inside the ASIC and each image can be read out in 64 {mu}s. A new acquisition sequence can then be started. Two analog readouts are available, one for the X-ray signal and one for the offset and afterglow measurement in case of pulsed X-rays. The outputs are converted into digital values by two off-chip 14 bits Analog-to-Digital Converters (ADC). A first version of ALIX has been tested with CZT and CdTe detectors under high-energy pulsed X-ray photons (20 MeV, 60 ns pulses every 250 ns). We will present the different results of linearity and signal-to-noise ratio. A second version of ALIX has been designed with some corrections. Electrical tests performed on 85 ASICS showed that the corrections were successful. We are now able to integrate them behind a 64x32 pixels 1 mm pitch CZT detector. Such an ASIC could also be used for strip detectors where a large dynamic range and a fast response are necessary.

  20. Large dynamic range 64-channel ASIC for CZT or CdTe detectors

    Science.gov (United States)

    Glasser, F.; Villard, P.; Rostaing, J. P.; Accensi, M.; Baffert, N.; Girard, J. L.

    2003-08-01

    We present a customized 64-channel ASIC, named ALIX, developed in a 0.8 μm CMOS technology. This circuit is dedicated to measure charges from semi-conductor X-ray detectors like Cadmium Zinc Telluride (CZT) or Cadmium Telluride CdTe. The specificity of ALIX is to be able to measure charges over a very large dynamic range (from 10 fC to 3 nC), and to store eight measurements in a very short time (from every 250 ns to a few ms). Up to eight images are stored inside the ASIC and each image can be read out in 64 μs. A new acquisition sequence can then be started. Two analog readouts are available, one for the X-ray signal and one for the offset and afterglow measurement in case of pulsed X-rays. The outputs are converted into digital values by two off-chip 14 bits Analog-to-Digital Converters (ADC). A first version of ALIX has been tested with CZT and CdTe detectors under high-energy pulsed X-ray photons (20 MeV, 60 ns pulses every 250 ns). We will present the different results of linearity and signal-to-noise ratio. A second version of ALIX has been designed with some corrections. Electrical tests performed on 85 ASICS showed that the corrections were successful. We are now able to integrate them behind a 64×32 pixels 1 mm pitch CZT detector. Such an ASIC could also be used for strip detectors where a large dynamic range and a fast response are necessary.

  1. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    Science.gov (United States)

    Gimenez, E. N.; Astromskas, V.; Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N.

    2016-07-01

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e- collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system.

  2. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    Science.gov (United States)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  3. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

    Science.gov (United States)

    Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

    2016-12-01

    Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

  4. Photo-responsivity characterizations of CdTe films for direct-conversion X-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ryun Kyung; Cha, Bo Kyung; Jeon, Sung Chae; Seo, Chang Woo [Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Yun, Seung Man [Pusan National University, Busan (Korea, Republic of)

    2014-08-15

    We have fabricated and investigated thin, polycrystalline, cadmium-telluride (CdTe) films in order to utilize them for optical switching readout layers in direct-conversion X-ray detectors. The polycrystalline CdTe films are fabricated on ITO glasses by using the physical vapor deposition (PVD) method at a slow deposition rate and a pressure of 10{sup -6} torr. CdTe films with thicknesses of 5 and 20 μm are grown. The electrical and the optical characteristics of the CdTe films are investigated by measuring the dark-current and the photo-current as functions of the applied field under different wavelengths of light. Higher photo-currents are generated at the longer wavelengths of light for the same applied voltage. When a higher electrical field is applied to the 20 μm-thick CdTe film, a higher dark-current, a higher photo-current, a larger number of charges, and a higher quantum efficiency are generated.

  5. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    Energy Technology Data Exchange (ETDEWEB)

    Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

    2016-07-11

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

  6. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    CERN Document Server

    Vittone, E; Lo Giudice, A; Polesello, P; Manfredotti, C

    1999-01-01

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the 'ISIDE' Monte Carlo programme to simulate the CdTe response to gamma rays produced by sup 5 sup 7 Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector.

  7. Possible use of CdTe detectors in kVp monitoring of diagnostic x-ray tubes.

    Science.gov (United States)

    Krmar, M; Bucalović, N; Baucal, M; Jovančević, N

    2010-10-01

    It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of x-ray photon spectra) should be monitored routinely; however a standardized noninvasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent x-ray lines registered after irradiation of some material by an x-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to distinguish individual x-ray fluorescence lines and high efficiency for the photon energies in the diagnostic region. Our initial measurements have demonstrated that the different ratios of the integral number of Compton scattered photons and intensities of K and L fluorescent lines detected by CdTe detector are sensitive function of maximal photon energy and could be successfully applied for kVp monitoring.

  8. Comparison of CdTe and CdZnTe Detectors for Field Determination of Uranium Isotopic Enrichments

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, KJ

    2004-01-23

    A performance comparison of a CdTe and a CdZnTe detector when exposed to uranium samples of various isotopic enrichments has been performed. These high-resolution detectors can assist in the rapid determination of uranium isotopic content of illicit material. Spectra were recorded from these room temperature semiconductor detectors with a portable multi-channel analyzer, both in the laboratory and in a field environment. Both detectors were operated below ambient temperature using the vendor supplied thermoelectric coolers. Both detectors had nominally the same active volume (18 mm3 for the CdZnTe and 25 mm3 for the CdTe detector) and resolution. Spectra of samples of known isotopic content were recorded at fixed geometries. An evaluation of potential signature g rays for the detection of enriched uranium was completed. Operational advantages and disadvantages of each detector are discussed. There is a need to improve the detection sensitivity during the interdiction of special nuclear materials (SNM) for increased homeland protection. It is essential to provide additional tools to first responders and law enforcement personnel for assessing nuclear and radiological threats.

  9. Simulation studies and spectroscopic measurements of a position sensitive detector based on pixelated CdTe crystals

    CERN Document Server

    Karafasoulis, K; Seferlis, S; Kaissas, I; Lambropoulos, C; Loukas, D; Potiriadis, C

    2010-01-01

    Simulation studies and spectroscopic measurements are presented regarding the development of a pixel multilayer CdTe detector under development in the context of the COCAE project. The instrument will be used for the localization and identification of radioactive sources and radioactively contaminated spots. For the localization task the Compton effect is exploited. The detector response under different radiation fields as well as the overall efficiency of the detector has been evaluated. Spectroscopic measurements have been performed to evaluate the energy resolution of the detector. The efficiency of the event reconstruction has been studied in a wide range of initial photon energies by exploiting the detector's angular resolution measure distribution. Furthermore, the ability of the COCAE detector to localize radioactive sources has been investigated.

  10. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

    Science.gov (United States)

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  12. Monte Carlo simulation of the response functions of CdTe detectors to be applied in x-ray spectroscopy.

    Science.gov (United States)

    Tomal, A; Santos, J C; Costa, P R; Lopez Gonzales, A H; Poletti, M E

    2015-06-01

    In this work, the energy response functions of a CdTe detector were obtained by Monte Carlo (MC) simulation in the energy range from 5 to 160keV, using the PENELOPE code. In the response calculations the carrier transport features and the detector resolution were included. The computed energy response function was validated through comparison with experimental results obtained with (241)Am and (152)Eu sources. In order to investigate the influence of the correction by the detector response at diagnostic energy range, x-ray spectra were measured using a CdTe detector (model XR-100T, Amptek), and then corrected by the energy response of the detector using the stripping procedure. Results showed that the CdTe exhibits good energy response at low energies (below 40keV), showing only small distortions on the measured spectra. For energies below about 80keV, the contribution of the escape of Cd- and Te-K x-rays produce significant distortions on the measured x-ray spectra. For higher energies, the most important correction is the detector efficiency and the carrier trapping effects. The results showed that, after correction by the energy response, the measured spectra are in good agreement with those provided by a theoretical model of the literature. Finally, our results showed that the detailed knowledge of the response function and a proper correction procedure are fundamental for achieving more accurate spectra from which quality parameters (i.e., half-value layer and homogeneity coefficient) can be determined.

  13. Characterization of a module with pixelated CdTe detectors for possible PET, PEM and compton camera applications

    Science.gov (United States)

    Ariño-Estrada, G.; Chmeissani, M.; de Lorenzo, G.; Puigdengoles, C.; Martínez, R.; Cabruja, E.

    2014-05-01

    We present the measurement of the energy resolution and the impact of charge sharing for a pixel CdTe detector. This detector will be used in a novel conceptual design for diagnostic systems in the field of nuclear medicine such as positron emission tomography (PET), positron emission mammography (PEM) and Compton camera. The detector dimensions are 10 mm × 10 mm × 2 mm and with a pixel pitch of 1 mm × 1 mm. The pixel CdTe detector is a Schottky diode and it was tested at a bias of -1000 V. The VATAGP7.1 frontend ASIC was used for the readout of the pixel detector and the corresponding single channel electronic noise was found to be σ < 2 keV for all the pixels. We have achieved an energy resolution, FWHM/Epeak, of 7.1%, 4.5% and 0.98% for 59.5, 122 and 511 keV respectively. The study of the charge sharing shows that 16% of the events deposit part of their energy in the adjacent pixel.

  14. Estimation of mammary gland composition using CdTe series detector developed for photon-counting mammography

    Science.gov (United States)

    Ihori, Akiko; Okamoto, Chizuru; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Nakajima, Ai; Kato, Misa; Kodera, Yoshie

    2016-03-01

    Energy resolved photon-counting mammography is a new technology, which counts the number of photons that passes through an object, and presents it as a pixel value in an image of the object. Silicon semiconductor detectors are currently used in commercial mammography. However, the disadvantage of silicon is the low absorption efficiency for high X-ray energies. A cadmium telluride (CdTe) series detector has a high absorption efficiency over a wide energy range. In this study, we proposed a method to estimate the composition of the mammary gland using a CdTe series detector as a photon-counting detector. The fact that the detection rate of breast cancer in mammography is affected by mammary gland composition is now widely accepted. Assessment of composition of the mammary gland has important implications. An important advantage of our proposed technique is its ability to discriminate photons using three energy bins. We designed the CdTe series detector system using the MATLAB simulation software. The phantom contains nine regions with the ratio of glandular tissue and adipose varying in increments of 10%. The attenuation coefficient for each bin's energy was calculated from the number of input and output photons possessed by each. The evaluation results obtained by plotting the attenuation coefficient μ in a three-dimensional (3D) scatter plot show that the plots had a regular composition order congruent with that of the mammary gland. Consequently, we believe that our proposed method can be used to estimate the composition of the mammary gland.

  15. Discrimination between normal breast tissue and tumor tissue using CdTe series detector developed for photon-counting mammography

    Science.gov (United States)

    Okamoto, Chizuru; Ihori, Akiko; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Kato, Misa; Nakajima, Ai; Kodera, Yoshie

    2016-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) series photon-counting detector, having high absorption efficiency over a wide energy range. In a previous study, we showed that the use of high X-ray energy in digital mammography is useful from the viewpoint of exposure dose and image quality. In addition, the CdTe series detector can acquire X-ray spectrum information following transmission through a subject. This study focused on the tissue composition identified using spectral information obtained by a new photon-counting detector. Normal breast tissue consists entirely of adipose and glandular tissues. However, it is very difficult to find tumor tissue in the region of glandular tissue via a conventional mammogram, especially in dense breast because the attenuation coefficients of glandular tissue and tumor tissue are very close. As a fundamental examination, we considered a simulation phantom and showed the difference between normal breast tissue and tumor tissue of various thicknesses in a three-dimensional (3D) scatter plot. We were able to discriminate between both types of tissues. In addition, there was a tendency for the distribution to depend on the thickness of the tumor tissue. Thinner tumor tissues were shown to be closer in appearance to normal breast tissue. This study also demonstrated that the difference between these tissues could be made obvious by using a CdTe series detector. We believe that this differentiation is important, and therefore, expect this technology to be applied to new tumor detection systems in the future.

  16. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    Science.gov (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  17. Electric field and current transport mechanisms in Schottky CdTe X-ray detectors under perturbing optical radiation.

    Science.gov (United States)

    Cola, Adriano; Farella, Isabella

    2013-07-22

    Schottky CdTe X-ray detectors exhibit excellent spectroscopic performance but suffer from instabilities. Hence it is of extreme relevance to investigate their electrical properties. A systematic study of the electric field distribution and the current flowing in such detectors under optical perturbations is presented here. The detector response is explored by varying experimental parameters, such as voltage, temperature, and radiation wavelength. The strongest perturbation is observed under 850 nm irradiation, bulk carrier recombination becoming effective there. Cathode and anode irradiations evidence the crucial role of the contacts, the cathode being Ohmic and the anode blocking. In particular, under irradiation of the cathode, charge injection occurs and peculiar kinks, typical of trap filling, are observed both in the current-voltage characteristic and during transients. The simultaneous access to the electric field and the current highlights the correlation between free and fixed charges, and unveils carrier transport/collection mechanisms otherwise hidden.

  18. Electric Field and Current Transport Mechanisms in Schottky CdTe X-ray Detectors under Perturbing Optical Radiation

    Directory of Open Access Journals (Sweden)

    Isabella Farella

    2013-07-01

    Full Text Available Schottky CdTe X-ray detectors exhibit excellent spectroscopic performance but suffer from instabilities. Hence it is of extreme relevance to investigate their electrical properties. A systematic study of the electric field distribution and the current flowing in such detectors under optical perturbations is presented here. The detector response is explored by varying experimental parameters, such as voltage, temperature, and radiation wavelength. The strongest perturbation is observed under 850 nm irradiation, bulk carrier recombination becoming effective there. Cathode and anode irradiations evidence the crucial role of the contacts, the cathode being Ohmic and the anode blocking. In particular, under irradiation of the cathode, charge injection occurs and peculiar kinks, typical of trap filling, are observed both in the current-voltage characteristic and during transients. The simultaneous access to the electric field and the current highlights the correlation between free and fixed charges, and unveils carrier transport/collection mechanisms otherwise hidden.

  19. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    OpenAIRE

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to dig...

  20. Possible use of CdTe detectors in kVp monitoring of diagnostic x-ray tubes

    OpenAIRE

    Krmar, M.; Bucalović, N.; Baucal, M.; Jovančević, N.

    2010-01-01

    It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of x-ray photon spectra) should be monitored routinely; however a standardized noninvasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent x-ray lines registered after irradiation of some material by an x-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to dist...

  1. Development of a pixelated CdTe detector module for a hard-x and gamma-ray imaging spectrometer application

    Science.gov (United States)

    Galvèz, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-07-01

    Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of novae and supernovae in X and gamma-rays, with the use of space missions. We have also been involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae and Classical Novae. In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm with a pixel pitch of 1mm x 1mm. Two kinds of CdTe pixel detectors with different contacts have been tested: ohmic and Schottky. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout VATAGP7.1 ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. The study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the detector design. We will report on the spectroscopy characterisation of the CdTe detector module as well as the study of charge sharing.

  2. Long-Term Stable Surface Treatments on CdTe and CdZnTe Radiation Detectors

    Science.gov (United States)

    Pekarek, Jakub; Belas, Eduard; Zazvorka, Jakub

    2017-04-01

    The spectral resolution and charge collection efficiency (CCE) of cadmium telluride (CdTe) and cadmium zinc telluride (CZT) room-temperature x-ray and gamma-ray detectors are often limited by high surface leakage current due to conducting surface species created during detector fabrication. Surface treatments play a major role in reduction of this surface leakage current. The effect of various types of surface etching and passivation on the leakage current and thereby the spectral energy resolution, CCE, and internal electric field profile of CdTe/CZT detectors has been studied. The main aim of this work is preparation of long-term stable detectors with strongly reduced leakage current. The time stability of the current-voltage characteristic and spectral resolution was investigated during 21 days and 1 year, respectively, after performing surface treatments. Our results suggest that the optimal detector preparation method is chemomechanical polishing in bromine-ethylene glycol solution followed by chemical etching in bromine-methanol solution then surface passivation in potassium hydroxide or ammonium fluoride (NH4F/H2O2). Detectors prepared using this optimal treatment exhibited low leakage current, high spectral resolution, and long-term stability compared with those subjected to other surface preparation methods.

  3. Charge-sharing observations with a CdTe pixel detector irradiated with a{sup 57}Co source

    Energy Technology Data Exchange (ETDEWEB)

    Maiorino, M. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Barcelona (Spain)]. E-mail: maiorino@itas.es; Pellegrini, G. [Centro Nacional de Microelectronica, IMB-CNM-CSIC, UAB Campus, 08193 Barcelona (Spain); Blanchot, G. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Barcelona (Spain); Chmeissani, M. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Barcelona (Spain); Garcia, J. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Barcelona (Spain); Martinez, R. [Centro Nacional de Microelectronica, IMB-CNM-CSIC, UAB Campus, 08193 Barcelona (Spain); Lozano, M. [Centro Nacional de Microelectronica, IMB-CNM-CSIC, UAB Campus, 08193 Barcelona (Spain); Puigdengoles, C. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Barcelona (Spain); Ullan, M. [Centro Nacional de Microelectronica, IMB-CNM-CSIC, UAB Campus, 08193 Barcelona (Spain)

    2006-07-01

    Charge sharing is a limiting factor of detector spatial resolution and contrast in photon counting imaging devices because multiple counts can be induced in adjacent pixels as a result of the spread of the charge cloud generated from a single X-ray photon of high energy in the detector bulk. Although this topic has been debated for a long time, the full impact of charge sharing has not been completely assessed. In this work, we look at the importance of charge sharing in CdTe pixel detectors by exposing such a device to a low-activity (37 kBq){sup 57}Co source, whose main emission line is at 122 keV.The detectors used are 1 mm thick with a pixel pitch of 55 {mu}m. These detectors are bump-bonded to Medipix2 photon-counting chips. This study gives an insight of the impact on the design and operation of pixel detectors coupled to photon-counting devices for imaging applications.

  4. Charge-sharing observations with a CdTe pixel detector irradiated with a 57Co source

    Science.gov (United States)

    Maiorino, M.; Pellegrini, G.; Blanchot, G.; Chmeissani, M.; Garcia, J.; Martinez, R.; Lozano, M.; Puigdengoles, C.; Ullan, M.

    2006-07-01

    Charge sharing is a limiting factor of detector spatial resolution and contrast in photon counting imaging devices because multiple counts can be induced in adjacent pixels as a result of the spread of the charge cloud generated from a single X-ray photon of high energy in the detector bulk. Although this topic has been debated for a long time, the full impact of charge sharing has not been completely assessed. In this work, we look at the importance of charge sharing in CdTe pixel detectors by exposing such a device to a low-activity (37 kBq) 57Co source, whose main emission line is at 122 keV.The detectors used are 1 mm thick with a pixel pitch of 55 μm. These detectors are bump-bonded to Medipix2 photon-counting chips. This study gives an insight of the impact on the design and operation of pixel detectors coupled to photon-counting devices for imaging applications.

  5. Long-Term Stable Surface Treatments on CdTe and CdZnTe Radiation Detectors

    Science.gov (United States)

    Pekarek, Jakub; Belas, Eduard; Zazvorka, Jakub

    2016-12-01

    The spectral resolution and charge collection efficiency (CCE) of cadmium telluride (CdTe) and cadmium zinc telluride (CZT) room-temperature x-ray and gamma-ray detectors are often limited by high surface leakage current due to conducting surface species created during detector fabrication. Surface treatments play a major role in reduction of this surface leakage current. The effect of various types of surface etching and passivation on the leakage current and thereby the spectral energy resolution, CCE, and internal electric field profile of CdTe/CZT detectors has been studied. The main aim of this work is preparation of long-term stable detectors with strongly reduced leakage current. The time stability of the current-voltage characteristic and spectral resolution was investigated during 21 days and 1 year, respectively, after performing surface treatments. Our results suggest that the optimal detector preparation method is chemomechanical polishing in bromine-ethylene glycol solution followed by chemical etching in bromine-methanol solution then surface passivation in potassium hydroxide or ammonium fluoride (NH4F/H2O2). Detectors prepared using this optimal treatment exhibited low leakage current, high spectral resolution, and long-term stability compared with those subjected to other surface preparation methods.

  6. Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

    Science.gov (United States)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'ichiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Buitrago-Casas, Juan Camilo; Krucker, Säm.; Christe, Steven

    2016-07-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires -30°C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 μm for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 μm and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm × 7.67 mm, corresponding to the field of view of 791'' × 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of ≈4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  7. Design and optimization of an analog filter with a CdTe detector for X-ray fluorescence applications

    Science.gov (United States)

    Choi, Hyojeong; Kim, Hui Su; Kim, Young Soo; Ha, Jang Ho; Chai, Jong-Seo

    2016-10-01

    An analog pre-filter circuit for digital pulse processing is designed and optimized for X-ray fluorescence (XRF) applications to replace traditional analog shaping amplifiers. To optimize the pre-filter performance, we characterized noise electrons as a function of the input pulse rise time and decay time of the output pulse by using the full width at half maximum. In addition, gamma-ray energy measurements at room temperature showed that the commercially available CdTe Schottky-type radiation detector with our newly designed and optimized pre-filter circuit exhibited full widths at half maxima of 4.97 (Ba-133, at 53 keV) and 5.56 keV (Am-241, at 59.5 keV), respectively.

  8. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior

    Directory of Open Access Journals (Sweden)

    Jeong Seok Lee

    2016-04-01

    Full Text Available Fast and accurate energy calibration of photon counting spectral detectors (PCSDs is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components.

  9. Development of CdTe pixel detectors combined with an aluminum Schottky diode sensor and photon-counting ASICs

    Science.gov (United States)

    Toyokawa, H.; Saji, C.; Kawase, M.; Wu, S.; Furukawa, Y.; Kajiwara, K.; Sato, M.; Hirono, T.; Shiro, A.; Shobu, T.; Suenaga, A.; Ikeda, H.

    2017-01-01

    We have been developing CdTe pixel detectors combined with a Schottky diode sensor and photon-counting ASICs. The hybrid pixel detector was designed with a pixel size of 200 μ m by 200 μm and an area of 19 mm by 20 mm or 38.2 mm by 40.2 mm. The photon-counting ASIC, SP8-04F10K, has a preamplifier, a shaper, 3-level window-type discriminators and a 24-bits counter in each pixel. The single-chip detector with 100 by 95 pixels successfully operated with a photon-counting mode selecting X-ray energy with the window comparator and stable operation was realized at 20 degrees C. We have performed a feasibility study for a white X-ray microbeam experiment. Laue diffraction patterns were measured during the scan of the irradiated position in a silicon steel sample. The grain boundaries were identified by using the differentials between adjacent images at each position.

  10. Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray, gamma ray spectroscopic detector development

    Energy Technology Data Exchange (ETDEWEB)

    Niraula, Madan; Yasuda, Kazuhito; Yamashita, Hayate; Wajima, Yuto; Tsukamoto, Yudai; Matsumoto, Masahiko; Suzuki, Yuta; Takai, Noriaki; Tsukamoto, Yuki; Agata, Yasunori [Nagoya Institute of Technology, Graduate School of Engineering, Gokiso, Showa, Nagoya 466-8555 (Japan)

    2014-07-15

    We investigated MOVPE growth conditions to grow large-area and thick single crystal CdTe layers with uniform material properties directly on (211) Si substrates to develop nuclear radiation detectors. We found that group VI/II precursor flow-ratio as well as rapid thermal annealing performed by interrupting the growth at the initial stage has marked influence on the crystal quality. By using a VI/II precursor ratio of 3.0, and a 900 C anneal performed in flowing hydrogen, we were able to achieve 1-sq inch sized thick single crystal CdTe that showed uniform material properties and high crystal quality throughout the wafer. We further demonstrated that the grown crystals were suitable for fabricating nuclear radiation detector. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Polarisation measurements with a CdTe pixel array detector for Laue hard X-ray focusing telescopes

    CERN Document Server

    Caroli, E; Pisa, A; Stephen, J B; Frontera, F; Castanheira, M T D; Sordo, S; Caroli, Ezio; Silva, Rui M. Curado da; Pisa, Alessandro; Stephen, John B.; Frontera, Filippo; Castanheira, Matilde T. D.; Sordo, Stefano del

    2006-01-01

    Polarimetry is an area of high energy astrophysics which is still relatively unexplored, even though it is recognized that this type of measurement could drastically increase our knowledge of the physics and geometry of high energy sources. For this reason, in the context of the design of a Gamma-Ray Imager based on new hard-X and soft gamma ray focusing optics for the next ESA Cosmic Vision call for proposals (Cosmic Vision 2015-2025), it is important that this capability should be implemented in the principal on-board instrumentation. For the particular case of wide band-pass Laue optics we propose a focal plane based on a thick pixelated CdTe detector operating with high efficiency between 60-600 keV. The high segmentation of this type of detector (1-2 mm pixel size) and the good energy resolution (a few keV FWHM at 500 keV) will allow high sensitivity polarisation measurements (a few % for a 10 mCrab source in 106s) to be performed. We have evaluated the modulation Q factors and minimum detectable polaris...

  12. Simulation of the expected performance of a seamless scanner for brain PET based on highly pixelated CdTe detectors.

    Science.gov (United States)

    Mikhaylova, Ekaterina; De Lorenzo, Gianluca; Chmeissani, Mokhtar; Kolstein, Machiel; Cañadas, Mario; Arce, Pedro; Calderón, Yonatan; Uzun, Dilber; Ariño, Gerard; Macias-Montero, José Gabriel; Martinez, Ricardo; Puigdengoles, Carles; Cabruja, Enric

    2014-02-01

    The aim of this work is the evaluation of the design for a nonconventional PET scanner, the voxel imaging PET (VIP), based on pixelated room-temperature CdTe detectors yielding a true 3-D impact point with a density of 450 channels/cm(3), for a total 6 336 000 channels in a seamless ring shaped volume. The system is simulated and evaluated following the prescriptions of the NEMA NU 2-2001 and the NEMA NU 4-2008 standards. Results show that the excellent energy resolution of the CdTe detectors (1.6% for 511 keV photons), together with the small voxel pitch (1 × 1 × 2 mm(3)), and the crack-free ring geometry, give the design the potential to overcome the current limitations of PET scanners and to approach the intrinsic image resolution limits set by physics. The VIP is expected to reach a competitive sensitivity and a superior signal purity with respect to values commonly quoted for state-of-the-art scintillating crystal PETs. The system can provide 14 cps/kBq with a scatter fraction of 3.95% and 21 cps/kBq with a scatter fraction of 0.73% according to NEMA NU 2-2001 and NEMA NU 4-2008, respectively. The calculated NEC curve has a peak value of 122 kcps at 5.3 kBq/mL for NEMA NU 2-2001 and 908 kcps at 1.6 MBq/mL for NEMA NU 4-2008. The proposed scanner can achieve an image resolution of ~ 1 mm full-width at half-maximum in all directions. The virtually noise-free data sample leads to direct positive impact on the quality of the reconstructed images. As a consequence, high-quality high-resolution images can be obtained with significantly lower number of events compared to conventional scanners. Overall, simulation results suggest the VIP scanner can be operated either at normal dose for fast scanning and high patient throughput, or at low dose to decrease the patient radioactivity exposure. The design evaluation presented in this work is driving the development and the optimization of a fully operative prototype to prove the feasibility of the VIP concept.

  13. Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

    CERN Document Server

    Ishikawa, S; Watanabe, S; Uchida, Y; Takeda, S; Takahashi, T; Saito, S; Glesener, L; Buitrago-Casas, J C; Krucker, S; Christe, S

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4-15 keV using the new technique of HXR focusing optics. The focal plane detector requires -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66 at 15 keV for the silicon detectors) and position resolution of 75 um for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 um and almost 100 % efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of about 1 keV (FWHM) and low energy threshold of 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on De...

  14. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    OpenAIRE

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-...

  15. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  16. Gamma spectroscopic measurements using the PID350 pixelated CdTe radiation detector

    CERN Document Server

    Karafasoulis, K; Seferlis, S; Papadakis, I; Loukas, D; Lambropoulos, C; Potiriadis, C

    2010-01-01

    Spectroscopic measurements are presented using the PID350 pixelated gamma radiation detectors. A high-speed data acquisition system has been developed in order to reduce the data loss during the data reading in case of a high flux of photons. A data analysis framework has been developed in order to improve the resolution of the acquired energy spectra, using specific calibration parameters for each PID350's pixel. Three PID350 detectors have been used to construct a stacked prototype system and spectroscopic measurements have been performed in order to test the ability of the prototype to localize radioactive sources.

  17. On the energy response function of a CdTe Medipix2 Hexa detector

    Energy Technology Data Exchange (ETDEWEB)

    Koenig, Thomas, E-mail: t.koenig@dkfz.de [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany); Zwerger, Andreas [Freiburg Materials Research Center (FMF), Stefan-Meier-Strasse 21, 79104 Freiburg (Germany); Zuber, Marcus; Schuenke, Patrick; Nill, Simeon [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany); Guni, Ewald [Erlangen Centre for Astroparticle Physics (ECAP), Erwin-Rommel-Strasse 1, 91058 Erlangen (Germany); Fauler, Alex; Fiederle, Michael [Freiburg Materials Research Center (FMF), Stefan-Meier-Strasse 21, 79104 Freiburg (Germany); Oelfke, Uwe [German Cancer Research Center (DKFZ), Im Neuenheimer Feld 280, 69120 Heidelberg (Germany)

    2011-08-21

    X-ray imaging based on photon counting pixel detectors has received increased interest during the past years. Attached to a semiconductor of choice, some of these devices enable to resolve the spectral components of an image. This work presents the results from measuring the energy response function of a Medipix2 MXR Hexa detector, where six individual Medipix detectors were bump bonded to a 1 mm thick cadmium telluride sensor in order to form a 3x2 array of 4.2x2.8 cm{sup 2} size. The average FWHM of the photo peak of an {sup 241}Am source was found to be 2.2 and 2.1 keV for single pixels and bias voltages of 200 and 350 V, respectively, across the whole Hexa detector. This corresponds to a relative energy resolution of less than 4%. Adding up all pixel spectra of individual chips lead to an only small deterioration of energy resolution, with line widths of 2.7 and 2.5 keV. In general, a lower detection efficiency was observed for the lower voltage setting, along with a shift of the peak position towards lower energies.

  18. Polarization in CdTe radiation detectors at high X-ray photon fluxes (Conference Presentation)

    Science.gov (United States)

    Franc, Jan; Dědič, Václav; Pekárek, Jakub; Belas, Eduard; Touš, Jan

    2016-09-01

    In this contribution we show an improvement of a spectroscopic response of CZT X-ray detector operating at high fluxes of X-ray tube by simultaneous infrared light illumination with a wavelength of 1200 nm. CZT detectors usually suffer from a polarization effect while their internal electric field can be strongly deformed due to a trapping of photogenerated holes. We describe a mechanism of an optically induced depolarization peaking at photon energy of about 1 eV ( 1240 nm) due to an optical transition of electrons from the valence band to the deep level. The depolarization effect is accompanied by a decrease of the detector current which results in a lower noise entering the preamplifier of detector readout circuit. We have observed that it is possible to restore originally distorted X-ray spectra using additional 1200 nm LED illumination with a photon flux of 10^16 cm^-2s^-1 at approximately two times higher X-ray flux than without LED. The number of detected counts was in the range of 10^5-10^6mm^2s^-1. The restoration of the spectrum by continuous infrared light is accompanied by decrease of dark current. We explain this effect by light induced changes of profile of the electric filed that leads to decrease of the electron current injected from the cathode.

  19. CdTe and CdZnTe detectors in nuclear medicine

    CERN Document Server

    Scheiber, C

    2000-01-01

    Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

  20. Development of a 32-detector CdTe matrix for the SVOM ECLAIRs x/gamma camera: tests results of first flight models

    Science.gov (United States)

    Lacombe, K.; Dezalay, J.-P.; Houret, B.; Amoros, C.; Atteia, J.-L.; Aubaret, K.; Billot, M.; Bordon, S.; Cordier, B.; Delaigue, S.; Galliano, M.; Gevin, O.; Godet, O.; Gonzalez, F.; Guillemot, Ph.; Limousin, O.; Mercier, K.; Nasser, G.; Pons, R.; Rambaud, D.; Ramon, P.; Waegebaert, V.

    2016-07-01

    ECLAIRs, a 2-D coded-mask imaging camera on-board the Sino-French SVOM space mission, will detect and locate gamma-ray bursts in near real time in the 4 - 150 keV energy band in a large field of view. The design of ECLAIRs has been driven by the objective to reach an unprecedented low-energy threshold of 4 keV. The detection plane is an assembly of 6400 Schottky CdTe detectors of size 4x4x1 mm3, biased from -200V to -500V and operated at -20°C. The low-energy threshold is achieved thanks to an innovative hybrid module composed of a thick film ceramic holding 32 CdTe detectors ("Detectors Ceramics"), associated to an HTCC ceramic housing a low-noise 32-channel ASIC ("ASIC Ceramics"). We manage the coupling between Detectors Ceramics and ASIC Ceramics in order to achieve the best performance and ensure the uniformity of the detection plane. In this paper, we describe the complete hybrid XRDPIX, of which 50 flight models have been manufactured by the SAGEM company. Afterwards, we show test results obtained on Detectors Ceramics, on ASIC Ceramics and on the modules once assembled. Then, we compare and confront detectors leakage currents and ASIC ENC with the energy threshold values and FWHM measured on XRDPIX modules at the temperature of -20°C by using a calibrated radioactive source of 241Am. Finally, we study the homogeneity of the spectral properties of the 32-detector hybrid matrices and we conclude on general performance of more than 1000 detection channels which may reach the lowenergy threshold of 4 keV required for the future ECLAIRs space camera.

  1. Spectroscopy of low energy solar neutrinos using CdTe detectors

    Science.gov (United States)

    Zuber, K.

    2003-10-01

    The usage of a large amount of CdTe(CdZnTe) semiconductor detectors for solar neutrino spectroscopy in the low energy region is investigated. Several different coincidence signals can be formed on five different isotopes to measure the 7Be neutrino line at 862 keV in real-time. The most promising one is the usage of 116Cd resulting in 227 SNU. The presence of 125Te permits even the real-time detection of pp-neutrinos. A possible antineutrino flux above 713 keV might be detected by capture on 106Cd.

  2. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    CERN Document Server

    Ede, A

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with ...

  3. Using a CdTe detector for 125Te Mössbauer Spectroscopy: Application to the f-factor in Mg3TeO6

    Science.gov (United States)

    Bargholtz, Chr; Blomquist, J.; Fumero, E.; Mårtensson, L.; Einarsson, L.; Wäppling, R.

    2000-09-01

    An apparatus for Mössbauer spectroscopy has been developed with a cadmium telluride (CdTe) γ-ray detector. Complete data regarding γ-ray energy, source velocity, temperature and real time are stored for off-line analysis. The apparatus has been used to study the spectrum of 125Te in Mg 3TeO 6 at room temperature. The 35.5 keV transition of 125Te in Mg 3TeO 6 was found to have a recoil-free fraction f=0.392(5) corresponding to a Debye temperature θ=352(3) K.

  4. Energy-windowed, pixellated X-ray diffraction using the Pixirad CdTe detector

    Science.gov (United States)

    O'Flynn, D.; Bellazzini, R.; Minuti, M.; Brez, A.; Pinchera, M.; Spandre, G.; Moss, R.; Speller, R. D.

    2017-01-01

    X-ray diffraction (XRD) is a powerful tool for material identification. In order to interpret XRD data, knowledge is required of the scattering angles and energies of X-rays which interact with the sample. By using a pixellated, energy-resolving detector, this knowledge can be gained when using a spectrum of unfiltered X-rays, and without the need to collimate the scattered radiation. Here we present results of XRD measurements taken with the Pixirad detector and a laboratory-based X-ray source. The cadmium telluride sensor allows energy windows to be selected, and the 62 μm pixel pitch enables accurate spatial information to be preserved for XRD measurements, in addition to the ability to take high resolution radiographic images. Diffraction data are presented for a variety of samples to demonstrate the capability of the technique for materials discrimination in laboratory, security and pharmaceutical environments. Distinct diffraction patterns were obtained, from which details on the molecular structures of the items under study were determined.

  5. Continued Development of Small-Pixel CZT and CdTe Detectors for Future High-Angular-Resolution Hard X-ray Missions

    Science.gov (United States)

    Krawczynski, Henric

    The Nuclear Spectroscopic Telescope Array (NuSTAR) Small Explorer Mission was launched in June 2012 and has demonstrated the technical feasibility and high scientific impact of hard X-ray astronomy. We propose to continue our current R&D program to develop finely pixelated semiconductor detectors and the associated readout electronics for the focal plane of a NuSTAR follow-up mission. The detector-ASIC (Application Specific Integrated Circuit) package will be ideally matched to the new generation of low-cost, low-mass X-ray mirrors which achieve an order of magnitude better angular resolution than the NuSTAR mirrors. As part of this program, the Washington University group will optimize the contacts of 2x2 cm^2 footprint Cadmium Zinc Telluride (CZT) and Cadmium Telluride (CdTe) detectors contacted with 100x116 hexagonal pixels at a next-neighbor pitch of 200 microns. The Brookhaven National Laboratory group will design, fabricate, and test the next generation of the HEXID ASIC matched to the new X-ray mirrors and the detectors, providing a low-power 100x116 channel ASIC with extremely low readout noise (i.e. with a root mean square noise of 13 electrons). The detectors will be tested with radioactive sources and in the focal plane of high-angular-resolution X-ray mirrors at the X-ray beam facilities at the Goddard and Marshall Space Flight Centers.

  6. Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Fujimura, N.; Tachi, T.; Inuzuka, H.; Namba, S.; Muramatsu, S.; Kondo, T.; Agata, Y.

    2012-10-01

    We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14 × 8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/ n +-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100 V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6 eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6 eV deep levels.

  7. Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors

    Science.gov (United States)

    Zázvorka, Jakub; Franc, Jan; Beran, Lukáš; Moravec, Pavel; Pekárek, Jakub; Veis, Martin

    2016-01-01

    Abstract We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measurements, we found that the oxide consists only of oxygen bound to tellurium. We applied a refined theoretical model of the surface layer to evaluate the spectroscopic ellipsometry measurements. In this way we studied the dynamics and growth rate of the oxide layer within a month after chemical etching of the samples. We observed two phases in the evolution of the oxide layer on all studied samples. A rapid growth was visible within five days after the chemical treatment followed by semi-saturation and a decrease in the growth rate after the first week. After one month all the samples showed an oxide layer about 3 nm thick. The oxide thickness was correlated with leakage current degradation with time after surface preparation. PMID:27933118

  8. Extensive testing of Schottky CdTe detectors for the ECLAIRs X-Gamma-ray Camera on board the SVOM mission

    CERN Document Server

    Nadege, Remoue; Olivier, Godet; Pierre, Mandrou

    2010-01-01

    We report on an on-going test campaign of more than 5000 Schottky CdTe detectors (4x4x1 mm^3), over a sample of twelve thousands, provided by Acrorad Co., Ltd (Japan). 6400 of these detectors will be used to build the detection plane of the ECLAIRs camera on the Chinese-French gamma-ray burst mission SVOM. These tests are mandatory to fulfill the prime requirement of ECLAIRs to detect gamma-ray burst photons down to 4 keV. The detectors will be operated at -20C under a reverse bias of 600 V. We found that 78% of the detectors already tested could be considered for the flight model. We measured a mean energy resolution of 1.8 keV at 59.6 keV. We investigated the polarization effect first at room temperature and low bias voltage for faster analysis. We found that the spectroscopic degradation in quantum efficiency, gain and energy resolution, starts as soon as the bias is turned on: first slowly and then dramatically after a time t_p which depends on the temperature and the voltage value. Preliminary tests unde...

  9. Structural and electrical properties of polycrystalline CdTe films for direct X-ray imaging detectors

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Bo Kyung, E-mail: goldrain99@kaist.ac.kr [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan, Repulic of Korea (Korea, Republic of); Yang, Keedong [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan, Repulic of Korea (Korea, Republic of); Cha, Eun Seok; Yong, Seok-Min [Department of Materials Science and Engineering, KAIST, Daejeon, Repulic of Korea (Korea, Republic of); Heo, Duchang; Kim, Ryun Kyung; Jeon, Seongchae; Seo, Chang-Woo; Kim, Cho Rong [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan, Repulic of Korea (Korea, Republic of); Ahn, Byung Tae [Department of Materials Science and Engineering, KAIST, Daejeon, Repulic of Korea (Korea, Republic of); Lee, Tae-Bum [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan, Repulic of Korea (Korea, Republic of)

    2013-12-11

    We introduce polycrystalline cadmium telluride (CdTe) with high atomic number and density, low effective energy and wide band gap for application in large area diagnostic X-ray digital imaging. In this work, polycrystalline CdTe films were fabricated on ITO/glass substrate by both physical vapor deposition (PVD) with slow deposition rate and pressure of 10{sup −6} Torr and the closed space sublimation (CSS) method with high deposition rate and low vacuum pressure(10{sup −2} Torr). The various polycrystalline CdTe films were grown at different deposition rates and substrate temperatures. Physical properties such as microstructures and the crystal structure of the polycrystalline samples were investigated by SEM and XRD patterns respectively. The PVD method resulted in microstructures with columnar shape and more uniform surface, while the CSS method produced microstructures with many larger grains and less uniform surface. The films were polycrystalline structures with a preferential (111) direction. The electrical and optical properties such as the dark current as a function of applied bias voltage and X-ray sensitivity of the fabricated films were measured and investigated under X-ray exposure.

  10. Structural and electrical properties of polycrystalline CdTe films for direct X-ray imaging detectors

    Science.gov (United States)

    Cha, Bo Kyung; Yang, Keedong; Cha, Eun Seok; Yong, Seok-Min; Heo, Duchang; Kim, Ryun Kyung; Jeon, Seongchae; Seo, Chang-Woo; Kim, Cho Rong; Ahn, Byung Tae; Lee, Tae-Bum

    2013-12-01

    We introduce polycrystalline cadmium telluride (CdTe) with high atomic number and density, low effective energy and wide band gap for application in large area diagnostic X-ray digital imaging. In this work, polycrystalline CdTe films were fabricated on ITO/glass substrate by both physical vapor deposition (PVD) with slow deposition rate and pressure of 10-6 Torr and the closed space sublimation (CSS) method with high deposition rate and low vacuum pressure(10-2 Torr). The various polycrystalline CdTe films were grown at different deposition rates and substrate temperatures. Physical properties such as microstructures and the crystal structure of the polycrystalline samples were investigated by SEM and XRD patterns respectively. The PVD method resulted in microstructures with columnar shape and more uniform surface, while the CSS method produced microstructures with many larger grains and less uniform surface. The films were polycrystalline structures with a preferential (111) direction. The electrical and optical properties such as the dark current as a function of applied bias voltage and X-ray sensitivity of the fabricated films were measured and investigated under X-ray exposure.

  11. Characterization of CdTe sensors with Schottky contacts coupled to charge-integrating pixel array detectors for X-ray science

    Science.gov (United States)

    Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Ruff, J. P. C.; Gruner, S. M.

    2016-12-01

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128 × 128 pixel array with (150 μm)2 pixels.

  12. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature.

  13. Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

    CERN Document Server

    Becker, Julian; Shanks, Katherine S; Philipp, Hugh T; Weiss, Joel T; Purohit, Prafull; Chamberlain, Darol; Ruff, Jacob P C; Gruner, Sol M

    2016-01-01

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods $<$150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/...

  14. Developing fine-pixel CdTe detectors for the next generation of high-resolution hard x-ray telescopes

    Science.gov (United States)

    Christe, Steven

    Over the past decade, the NASA Marshall Space Flight Center (MSFC) has been improving the angular resolution of hard X-ray (HXR; 20 "70 keV) optics to the point that we now routinely manufacture optics modules with an angular resolution of 20 arcsec Half Power Diameter (HDP), almost three times the performance of NuSTAR optics (Ramsey et al. 2013; Gubarev et al. 2013a; Atkins et al. 2013). New techniques are currently being developed to provide even higher angular resolution. High angular resolution HXR optics require detectors with a large number of fine pixels in order to adequately sample the telescope point spread function (PSF) over the entire field of view. Excessively over-sampling the PSF will increase readout noise and require more processing with no appreciable increase in image quality. An appropriate level of over-sampling is to have 3 pixels within the HPD. For the HERO mirrors, where the HPD is 26 arcsec over a 6-m focal length converts to 750 μm, the optimum pixel size is around 250 μm. At a 10-m focal length these detectors can support a 16 arcsec HPD. Of course, the detectors must also have high efficiency in the HXR region, good energy resolution, low background, low power requirements, and low sensitivity to radiation damage (Ramsey 2001). The ability to handle high counting rates is also desirable for efficient calibration. A collaboration between Goddard Space Flight Center (GSFC), MSFC, and Rutherford Appleton Laboratory (RAL) in the UK is developing precisely such detectors under an ongoing, funded APRA program (FY2015 to FY2017). The detectors use the RALdeveloped Application Specific Integrated Circuit (ASIC) dubbed HEXITEC, for High Energy X-Ray Imaging Technology. These HEXITEC ASICs can be bonded to 1- or 2- mm-thick Cadmium Telluride (CdTe) or Cadmium-Zinc-Telluride (CZT) to create a fine (250 μm pitch) HXR detector (Jones et al. 2009; Seller et al. 2011). The objectives of this funded effort are to develop and test a HEXITEC

  15. Extensive simulation studies on the reconstructed image resolution of a position sensitive detector based on pixelated CdTe crystals

    CERN Document Server

    Zachariadou, K; Kaissas, I; Seferlis, S; Lambropoulos, C; Loukas, D; Potiriadis, C

    2011-01-01

    We present results on the reconstructed image resolution of a position sensitive radiation instrument (COCAE) based on extensive simulation studies. The reconstructed image resolution has been investigated in a wide range of incident photon energies emitted by point-like sources located at different source-to-detector distances on and off the detector's symmetry axis. The ability of the detector to distinguish multiple radioactive sources observed simultaneously is investigating by simulating point-like sources of different energies located on and off the detector's symmetry axis and at different positions

  16. Measurements of Ultra-Fast single photon counting chip with energy window and 75 μm pixel pitch with Si and CdTe detectors

    Science.gov (United States)

    Maj, P.; Grybos, P.; Kasinski, K.; Koziol, A.; Krzyzanowska, A.; Kmon, P.; Szczygiel, R.; Zoladz, M.

    2017-03-01

    Single photon counting pixel detectors become increasingly popular in various 2-D X-ray imaging techniques and scientific experiments mainly in solid state physics, material science and medicine. This paper presents architecture and measurement results of the UFXC32k chip designed in a CMOS 130 nm process. The chip consists of about 50 million transistors and has an area of 9.64 mm × 20.15 mm. The core of the IC is a matrix of 128 × 256 pixels of 75 μm pitch. Each pixel contains a CSA, a shaper with tunable gain, two discriminators with correction circuits and two 14-bit ripple counters operating in a normal mode (with energy window), a long counter mode (one 28-bit counter) and a zero-dead time mode. Gain and noise performance were verified with X-ray radiation and with the chip connected to Si (320 μm thick) and CdTe (750 μ m thick) sensors.

  17. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    Science.gov (United States)

    Accorsi, R.; Autiero, M.; Celentano, L.; Chmeissani, M.; Cozzolino, R.; Curion, A. S.; Frallicciardi, P.; Laccetti, P.; Lanza, R. C.; Lauria, A.; Maiorino, M.; Marotta, M.; Mettivier, G.; Montesi, M. C.; Riccio, P.; Roberti, G.; Russo, P.

    2007-02-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256×256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125I, 27-35 keV, 99mTc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor.

  18. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngjin, E-mail: radioyoungj@gmail.com [Department of Radiological Science, Eulji University, 553, Sanseong-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do (Korea, Republic of); Lee, Amy Candy [Department of Mathematics and Statistics, McGill University (Canada); Kim, Hee-Joung [Department of Radiological Science and Radiation Convergence Engineering, Yonsei University (Korea, Republic of)

    2016-09-11

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  19. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    Science.gov (United States)

    Lee, Youngjin; Lee, Amy Candy; Kim, Hee-Joung

    2016-09-01

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  20. Characterization of CdTe and CdZnTe detectors for gamma-ray imaging applications

    Science.gov (United States)

    Verger, L.; Boitel, M.; Gentet, M. C.; Hamelin, R.; Mestais, C.; Mongellaz, F.; Rustique, J.; Sanchez, G.

    2001-02-01

    CEA-LETI in association with Bicron and Crismatec has been developing solid-state gamma camera technology based on CZT. The project included gamma camera head systems development including front-end electronics with an integrated circuit (ASIC), material growth, and detector fabrication and characterization. One feature of the work is the use of linear correlation between the amplitude and the fast rise time of the signal - which corresponds to the electron transit time in the detector, a development that was reported previously and which allows more than 80% of the 122 keV γ-photons incident on HPBM material to be recovered in a ±6.5% 2D window. In the current work, we summarize other methods to improve CZT detector performance and compare them with the Bi-Parametric Spectrum (BPS) method. The BPS method can also be applied as a diagnositic. BPS curve shapes are shown to vary with electric field, and with electron transport properties, and the correction algorithims are seen to be robust over a range of values. In addition, the technique is found to improve detectors from a variety of sources including some with special electrode geometries. In all cases, the BPS method improves efficiency (>75%) without degrading energy resolution (± 6.5% 2D window) even for a monolithic detector. The method does not overcome bulk inhomogeneity nor noise which comes from low resistivity.

  1. Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

    Energy Technology Data Exchange (ETDEWEB)

    Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. (CEA, Direction des Technologies Avancees, Lab. d' Electronique, de Technologie et d' Instrumentation, DSYS, 38 - Grenoble (France)); Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. (CEA, Direction des Applications Militaires, 77 - Courtry (France))

    1992-11-15

    Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 [mu]rad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.).

  2. Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

    Energy Technology Data Exchange (ETDEWEB)

    Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. [CEA Centre d`Etudes de Grenoble, 38 (FR). Direction des Technologies Avancees; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. [CEA Centre d`Etudes de Vaujours, 77 - Courtry (FR)

    1991-12-31

    Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 {mu}rad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors.

  3. Alternative collimator for CdTe (model XR-100T), when it is used for a direct measurements of radiodiagnostic spectra; Colimador alternativo para um detector de CdTe (modelo XR-100T), usado em medidas diretas de espectros de radiodiagnostico

    Energy Technology Data Exchange (ETDEWEB)

    Soares, C.; Guevara, M.V. Manso; Milian, F. Mas; Garcia, F., E-mail: mvictoria.mansoguevara@gmail.com [Universidade Estadual de Santa Cruz (CPqCTR/UESC), Ilheus, BA (Brazil). Departamento de Ciencias Exatas; Nieto, L. [Universidade Estadual do Sudoeste da Bahia (UESB), Itapetinga, BA (Brazil)

    2014-01-15

    The spectrum simulation is a powerful instrument of great practical and pedagogical usefulness, because it helps to understand the technical and the instrumental limits of parameters in optimized measurements of magnitudes of interest in physics. Monte Carlo models, based on particle and radiation transport, provide easy and flexible tools for simulating complex geometries and materials. Particularly, MCNPX code is used to compare, manipulate, and quantify simulated and measured spectra. The purpose of this work is to use this tool set to estimate the characteristics of a collimation device, avoiding permanent and temporary damages into the diode-pin detector, during direct measurements of the Bremsstrahlung's spectrum, which was generated from diagnosis tubes with medical purpose. The simulations were made with a maximum voltage of 150 kVp, and typical charges used in radiological protocols in the medical area. Also, differential high pulse spectra, simulated and measured with a CdTe Detector, are reported. (author)

  4. Development of CVD diamond detectors for clinical dosimetry

    Science.gov (United States)

    Piliero, M. A.; Hugtenburg, R. P.; Ryde, S. J. S.; Oliver, K.

    2014-11-01

    The use of chemical vapour deposition (CVD) methods for the manufacture of diamonds could lead to detectors for high-resolution radiotherapy dosimetry that are cheaper and more reproducible than detectors based on natural diamonds. In this work two prototype designs (Diamond Detectors Ltd, Poole) of CVD diamond detectors were considered. The detectors were encapsulated in a water-proof housing in a form-factor that would be suitable for dosimetry measurements in water, as well as solid material phantoms. Stability of the dosimeter over time, the dose-response, dose-rate response and angular-response were examined. The study demonstrated that the detector behaviour conformed with theory in terms of the dose-rate response and had acceptable properties for use in the clinic.

  5. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  6. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    Science.gov (United States)

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  7. Simulation of charge transport in pixelated CdTe

    OpenAIRE

    Kolstein, M.; G Ariño; Chmeissani, M.; De Lorenzo, G.

    2014-01-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have op...

  8. CdTe ambulatory ventricular function monitor

    Energy Technology Data Exchange (ETDEWEB)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients.

  9. Simulation of charge transport in pixelated CdTe

    Science.gov (United States)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  10. SU-E-T-231: Measurements of Gold Nanoparticle-Mediated Proton Dose Enhancement Due to Particle-Induced X-Ray Emission and Activation Products Using Radiochromic Films and CdTe Detector

    Energy Technology Data Exchange (ETDEWEB)

    Cho, J; Cho, S [Dept. of Radiation Physics, UT MD Anderson Cancer Center, Houston, TX (United States); Manohar, N [Dept. of Radiation Physics, UT MD Anderson Cancer Center, Houston, TX (United States); Medical Physics Program, Georgia Institute of Technology, Atlanta, GA (Georgia); Krishnan, S [Dept. of Radiation Oncology, UT MD Anderson Cancer Center, Houston, TX (United States)

    2014-06-01

    Purpose: There have been several reports of enhanced cell-killing and tumor regression when tumor cells and mouse tumors were loaded with gold nanoparticles (GNPs) prior to proton irradiation. While particle-induced xray emission (PIXE), Auger electrons, secondary electrons, free radicals, and biological effects have been suggested as potential mechanisms responsible for the observed GNP-mediated dose enhancement/radiosensitization, there is a lack of quantitative analysis regarding the contribution from each mechanism. Here, we report our experimental effort to quantify some of these effects. Methods: 5-cm-long cylindrical plastic vials were filled with 1.8 mL of either water or water mixed with cylindrical GNPs at the same gold concentration (0.3 mg Au/g) as used in previous animal studies. A piece of EBT2 radiochromic film (30-µm active-layer sandwiched between 80/175-µm outer-layers) was inserted along the long axis of each vial and used to measure dose enhancement due to PIXE from GNPs. Vials were placed at center-of-modulation (COM) and 3-cm up-/down-stream from COM and irradiated with 5 different doses (2–10 Gy) using 10-cm-SOBP 160-MeV protons. After irradiation, films were cleaned and read to determine the delivered dose. A vial containing spherical GNPs (20 mg Au/g) was also irradiated, and gamma-rays from activation products were measured using a cadmium-telluride (CdTe) detector. Results: Film measurements showed no significant dose enhancement beyond the experimental uncertainty (∼2%). There was a detectable activation product from GNPs, but it appeared to contribute to dose enhancement minimally (<0.01%). Conclusion: Considering the composition of EBT2 film, it can be inferred that gold characteristic x-rays from PIXE and their secondary electrons make insignificant contribution to dose enhancement. The current investigation also suggests negligible dose enhancement due to activation products. Thus, previously-reported GNP-mediated proton dose

  11. Optical measurements for excitation of CdTe quantum dots

    Science.gov (United States)

    Vladescu, Marian; Feies, Valentin; Schiopu, Paul; Craciun, Alexandru; Grosu, Neculai; Manea, Adrian

    2016-12-01

    The paper presents the experimental results obtained using a laboratory setup installation for fluorescence excitation of CdTe QDs used as biomarkers for clinical diagnostics. Quantum Dots (QDs) made of Cadmium Telluride (CdTe), are highly fluorescent and they are used as robust biomarkers. Generally, QDs are referred to as the zero-dimensional colloidal crystals that possess strong size dependence and multi-colored luminescence properties. Along with its intrinsic features, such as sharp and symmetric emission, photo-stability and high quantum yields, QDs play a vital role in various applications, namely the identification of the chemical moieties, clinical diagnostics, optoelectronics, bio-imaging and bio-sensing1.

  12. Characterization of a HPHT diamond detector for clinical applications

    Energy Technology Data Exchange (ETDEWEB)

    De Angelis, C., E-mail: cinzia.deangelis@iss.i [Department of Technology and Health, Istituto Superiore di Sanita Viale Regina Elena 299, 00161 Roma (Italy); Bucciolini, M. [Dipartimento di Fisiopatologia Clinica, Universita di Firenze (Italy); Viscomi, D. [Department of Technology and Health, Istituto Superiore di Sanita Viale Regina Elena 299, 00161 Roma (Italy); Marczewska, B. [IFJ, Institute of Nuclear Physics, Krakow (Poland); Onori, S. [Department of Technology and Health, Istituto Superiore di Sanita Viale Regina Elena 299, 00161 Roma (Italy)

    2010-01-11

    An investigation of a high-pressure high-temperature (HPHT) synthetic diamond detector was performed with the aim to evaluate the potentiality of the detector for use in IMRT beams. Dosimetric parameters such as dynamics, stability of the response, linearity with dose and dose-rate dependence were studied and the HPHT sample behaviour was compared with that of a PTW natural diamond used as a reference system. In addition, a test in IMRT field using the step-and-shoot technique was also carried out on HPHT device. The main result of this study was the fast response shown by the HPHT sample, comparable to that of the natural diamond. Nevertheless, strong dose-rate dependence and the presence of the overshoot still limit the use of this system.

  13. Blanket and Patterned Growth of CdTe on (211)Si Substrates by Metal-Organic Vapor Phase Epitaxy

    Science.gov (United States)

    2012-05-15

    REPORT Blanket and Patterned Growth Of CdTE On (211)Si Substrates By Metal-Organic Vapor Phase Epitaxy 14. ABSTRACT 16. SECURITY CLASSIFICATION OF...Metalorganic vapor phase epitaxy (MOVPE) of (211)B CdTe on (211)Si using intermediate Ge and ZnTe layers has been achieved for use as substrates for the...growth of HgCdTe infrared detector materials. The best (211)B CdTe films grown in this study display a low X-ray diffraction (XRD) rocking-curve

  14. Advances in X-ray detectors for clinical and preclinical Computed Tomography

    Energy Technology Data Exchange (ETDEWEB)

    Panetta, Daniele

    2016-02-11

    Computed tomography (CT) is a non-invasive X-ray diagnostic technique that allows reconstructing cross sections of a patient's body, providing detailed information about structure and anatomy of organs and, in some extent, also about their functionality. Since the development of the first CT scanner for clinical use in the ‘70s, several improvements especially in solid-state X-ray detector technology with growing detection efficiency and fast response have led to the current configuration of modern ultra-fast, low dose whole body CT scanners. Such developments brought great advantages in the clinical settings in terms of image quality, dose effectiveness, imaging throughput, but also extending considerably the field of clinical application that were initially foreseen. Parallel to the roadmap of clinical CT technology, dedicated systems for high-resolution preclinical CT (or micro-CT) have seen a considerable growth in the last two decades, taking advantage of the modern technology of high granularity flat-panel X-ray detectors (FPD). This article aims at reviewing the milestones of the evolution of X-ray detector technology that have traced the roadmap of development of CT and micro-CT. An outlook of the current and future trends on energy resolved clinical and preclinical CT with photon counting detectors will be also given. - Highlights: • Evolution of X-ray detectors has marked the roadmap of CT technology development. • Digital flat-panel detectors have lead to the introduction of the CBCT concept. • CBCT systems with resolution below 0.1 mm are widely used in the preclinical field. • Photon-counting spectral imaging is foreseen to dominate the future of CT roadmap.

  15. Patterning thick diffused junctions on CdTe

    CERN Document Server

    Kalliopuska, Juha; Sipilä, Heikki; Andersson, Hans; Vähänen, Sami; Eränen, Simo; Tlustos, Lukas

    2009-01-01

    Dividing the detector crystal into discrete pixels enables making an imaging detector, in which the charge collected by each pixel can be read separately. Even if the detector is not meant for imaging, patterns on the crystal surface may be used as guard structures that control and limit the flow of charges in the crystal. This has been exceedingly hard for the detector crystals having thick diffused layers. The paper reports a patterning method of the thick diffused junctions on CdTe. The patterning method of In-diffused pn-junction on CdTe chip is demonstrated by using a diamond blade. The patterning is done by removing material from the pn-junction side of the chip, so that the trenches penetrate the diffused layer. As the trenches extend deeper into the bulk than the junction, the regions separated by the trench are electrically isolated. Electrical characterization results are reported for the strips separated by trenches with various depths. The strip isolation is clearly seen in both measured leakage c...

  16. APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE

    Energy Technology Data Exchange (ETDEWEB)

    Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

    2001-01-01

    A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

  17. Edge effects in a small pixel CdTe for X-ray imaging

    Science.gov (United States)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  18. K-edge EXAFS and XANES studies of Cu in CdTe thin-film solar cells

    Science.gov (United States)

    Liu, Xiangxin; Gupta, Akhlesh; Compaan, Alvin D.; Leyarovska, Nadia; Terry, Jeff

    2002-03-01

    Copper has been identified as a very important dopant element in CdTe thin-film solar cells. Cu is a deep acceptor in CdTe and is commonly used to obtain a heavily doped, low resistance back contact to polycrystalline CdTe. Cu also helps to increase the open circuit voltage of the cell. However, Cu is also a fast diffuser in CdTe, especially along grain boundaries, and can accumulate at the CdS/CdTe junction. It is suspected of leading to cell performance degradation in some cases. The present study is designed to help identify the lattice location of the Cu in CdTe. Cu K-edge, x-ray absorption (XAS) measurements were conducted on Cu in thin films of CdTe. Experiments were performed at the MR-CAT beamline at the Advanced Photon Source. The 3 mm CdTe layers were magnetron sputtered onto fused silica substrates. Some films were diffused with Cu from a 200 Å layer of evaporated Cu. XAS spectra were collected in fluorescence geometry with a 13 elements Ge detector. Quantitative fluorescence spectroscopy measurements were also performed. Details of the Cu environment and possible changes with time will be reported.

  19. CdTe devices and method of manufacturing same

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  20. Evaluation of detectors for the small field measurements used for clinical radiation dosimetry

    Science.gov (United States)

    Markovic, Miljenko

    Advanced radiation therapy treatments with very small field sizes are complex. Increasingly higher doses delivered in single or few fractions are being commonly used for the treatments of the small target volume. Absolute or relative small field dosimetry is difficult due to radiation transport. Therefore it is very important to understand characteristics of the small field, detector selection as well as correction factors that have to be taken into account for the accurate measurements. Reducing uncertainty in relative dose measurement and modeling dose on treatment planning systems are factors contributing to the accuracy of the small field radiation treatments. Several challenges in small field dosimetry arise because of the lack of lateral charge particle equilibrium as well as the occlusion of the direct photon beam source and collimator settings. Presence of low-density media in irradiation geometry does complicate dosimetry even more. All those conditions are representing the challenge when it comes to dosimetric measurements. Size and construction are crucial when it comes to choice of the detector. Depending on beam energy, resolving the beam profile and penumbra for the small field sizes are a challenge and practically impossible with detectors commonly used in clinics. With decreasing field size and due to changes in particle spectrum, variations in radiological parameters have to be taken into account. To measure percent depth dose, tissue maximum ratios, tissue phantom ratios as well as output factors for the small field size experimental studies and Monte Carlo simulations have been conducted to determine appropriate detectors for the measurements. The primary goal of Specific Aim 1 was experimental quantification of the performance parameters for single detectors used for dosimetric verification of the small fields in radiotherapy. The proposed method and qualitative value for appropriate detectors selection defined by field size has been set. The

  1. High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices

    CERN Document Server

    Watanabe, Shin; Aono, Hiroyuki; Takeda, Shin'ichiro; Odaka, Hirokazu; Kokubun, Motohide; Takahashi, Tadayuki; Nakazawa, Kazuhiro; Tajima, Hiroyasu; Onishi, Mitsunobu; Kuroda, Yoshikatsu

    2008-01-01

    We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was ob...

  2. Musculoskeletal wide detector CT: Principles, techniques and applications in clinical practice and research

    Energy Technology Data Exchange (ETDEWEB)

    Gondim Teixeira, Pedro Augusto, E-mail: ped_gt@hotmail.com [Guilloz Imaging Department, Central Hospital, University Hospital Center of Nancy, 29 avenue du Maréchal de Lattre de Tassigny, 54035 Nancy Cedex (France); Gervaise, Alban [Medical Imaging Department, Legouest Military Instruction Hospital, 27 Avenue de Plantières, BP 90001, 57077 Metz Cedex 3 (France); Louis, Matthias; Lecocq, Sophie; Raymond, Ariane; Aptel, Sabine; Blum, Alain [Guilloz Imaging Department, Central Hospital, University Hospital Center of Nancy, 29 avenue du Maréchal de Lattre de Tassigny, 54035 Nancy Cedex (France)

    2015-05-15

    Highlights: • Wide area-detector CT availability is growing steadily. • Advanced techniques such as Dynamic CT, Perfusion CT and dual energy can be used in clinical practice. • Optimal acquisition protocol is needed to increase diagnostic performance and limit dose exposure. • Guidelines for data acquisition and interpretation may increase diagnostic performance and reproducibility. - Abstract: A progressive increase in the detector width in CT scanners has meant that advanced techniques such as dynamic, perfusion and dual-energy CT are now at the radiologist's disposal. Although these techniques may be important for the diagnosis of various musculoskeletal diseases, data acquisition and interpretation can be challenging. This article offers a practical guide for the use of these tools including acquisition protocol, post-processing options and data interpretation based on 7 years of clinical experience in a tertiary university hospital.

  3. Selective CdTe Nanoheteroepitaxial Growth on Si(100) Substrates Using the Close-Spaced Sublimation Technique Without the Use of a Mask

    Science.gov (United States)

    Diaz, A.; Quinones, S. A.; Ferrer, D. A.

    2013-06-01

    The development of HgCdTe detectors requires high sensitivity, small pixel size, low defect density, long-term thermal-cycling reliability, and large-area substrates. CdTe bulk substrates were initially used for epitaxial growth of HgCdTe films. However, CdTe has a lattice mismatch with long-wavelength infrared (LWIR) and middle-wavelength infrared (MWIR) HgCdTe that results in detrimental dislocation densities above mid-106 cm-2. This work explores the use of CdTe/Si as a possible substrate for HgCdTe detectors. Although there is a 19% lattice mismatch between CdTe and Si, the nanoheteroepitaxy (NHE) technique makes it possible to grow CdTe on Si substrates with fewer defects at the CdTe/Si interface. In this work, Si(100) was patterned using photolithography and dry etching to create 500-nm to 1- μm pillars. CdTe was selectively deposited on the pillar surfaces using the close-spaced sublimation (CSS) technique. Scanning electron microscopy (SEM) was used to characterize the CdTe selective growth and grain morphology, and transmission electron microscopy (TEM) was used to analyze the structure and quality of the grains. CdTe selectivity was achieved for most of the substrate and source temperatures used in this study. The ability to selectively deposit CdTe on patterned Si(100) substrates without the use of a mask or seed layer has not been observed before using the CSS technique. The results from this study confirm that CSS has the potential to be an effective and low-cost technique for selective nanoheteroepitaxial growth of CdTe films on Si(100) substrates for infrared detector applications.

  4. A scintillating gas detector for 2D dose measurements in clinical carbon beams.

    Science.gov (United States)

    Seravalli, E; de Boer, M; Geurink, F; Huizenga, J; Kreuger, R; Schippers, J M; van Eijk, C W E; Voss, B

    2008-09-07

    A two-dimensional position sensitive dosimetry system based on a scintillating gas detector has been developed for pre-treatment verification of dose distributions in hadron therapy. The dosimetry system consists of a chamber filled with an Ar/CF4 scintillating gas mixture, inside which two cascaded gas electron multipliers (GEMs) are mounted. A GEM is a thin kapton foil with copper cladding structured with a regular pattern of sub-mm holes. The primary electrons, created in the detector's sensitive volume by the incoming beam, drift in an electric field towards the GEMs and undergo gas multiplication in the GEM holes. During this process, photons are emitted by the excited Ar/CF4 gas molecules and detected by a mirror-lens-CCD camera system. Since the amount of emitted light is proportional to the dose deposited in the sensitive volume of the detector by the incoming beam, the intensity distribution of the measured light spot is proportional to the 2D hadron dose distribution. For a measurement of a 3D dose distribution, the scintillating gas detector is mounted at the beam exit side of a water-bellows phantom, whose thickness can be varied in steps. In this work, the energy dependence of the output signal of the scintillating gas detector has been verified in a 250 MeV/u clinical 12C ion beam by means of a depth-dose curve measurement. The underestimation of the measured signal at the Bragg peak depth is only 9% with respect to an air-filled ionization chamber. This is much smaller than the underestimation found for a scintillating Gd2O2S:Tb ('Lanex') screen under the same measurement conditions (43%). Consequently, the scintillating gas detector is a promising device for verifying dose distributions in high LET beams, for example to check hadron therapy treatment plans which comprise beams with different energies.

  5. Direct Measurement of Mammographic X-Ray Spectra with a Digital CdTe Detection System

    Directory of Open Access Journals (Sweden)

    Giuseppe Raso

    2012-06-01

    Full Text Available In this work we present a detection system, based on a CdTe detector and an innovative digital pulse processing (DPP system, for high-rate X-ray spectroscopy in mammography (1–30 keV. The DPP system performs a height and shape analysis of the detector pulses, sampled and digitized by a 14-bit, 100 MHz ADC. We show the results of the characterization of the detection system both at low and high photon counting rates by using monoenergetic X-ray sources and a nonclinical X-ray tube. The detection system exhibits excellent performance up to 830 kcps with an energy resolution of 4.5% FWHM at 22.1 keV. Direct measurements of clinical molybdenum X-ray spectra were carried out by using a pinhole collimator and a custom alignment device. A comparison with the attenuation curves and the half value layer values, obtained from the measured and simulated spectra, from an ionization chamber and from a solid state dosimeter, also shows the accuracy of the measurements. These results make the proposed detection system a very attractive tool for both laboratory research, calibration of dosimeters and advanced quality controls in mammography.

  6. Characterization of imaging pixel detectors of Si and CdTe read out with the counting X-ray chip MPEC 2.3; Charakterisierung von bildgebenden Pixeldetektoren aus Si und CdTe ausgelesen mit dem zaehlenden Roentgenchip MPEC 2.3

    Energy Technology Data Exchange (ETDEWEB)

    Loecker, M.

    2007-04-15

    Single photon counting detectors with Si- and CdTe-sensors have been constructed and characterized. As readout chip the MPEC 2.3 is used which consists of 32 x 32 pixels with 200 x 200 {mu}m{sup 2} pixel size and which has a high count rate cabability (1 MHz per pixel) as well as a low noise performance (55 e{sup -}). Measurements and simulations of the detector homogeneity are presented. It could be shown that the theoretical maximum of the homogeneity is reached (quantum limit). By means of the double threshold of the MPEC chip the image contrast can be enhanced which is demonstrated by measurement and simulation. Also, multi-chip-modules consisting of 4 MPEC chips and a single Si- or CdTe-sensor have been constructed and successfully operated. With these modules modulation-transfer-function measurements have been done showing a good spatial resolution of the detectors. In addition, multi-chip-modules according to the Sparse-CMOS concept have been built and tests characterizing the interconnection technologies have been performed.

  7. Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

    OpenAIRE

    Ariño-Estrada, G.; Chmeissani, M.; De Lorenzo, G.; Kolstein, M.; Puigdengoles, C; García, J; Cabruja, E.

    2014-01-01

    We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain ...

  8. Dosimetric study of thermoluminescent detectors in clinical photon beams using liquid water and PMMA phantoms

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Luciana C., E-mail: lmatsushima@ipen.br [Gerencia de Metrologia das Radiacoes (GMR) - Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Av. Prof. Lineu Prestes, 2242, Cidade Universitaria, CEP: 05508-000, Sao Paulo, SP (Brazil); Veneziani, Glauco R. [Gerencia de Metrologia das Radiacoes (GMR) - Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Av. Prof. Lineu Prestes, 2242, Cidade Universitaria, CEP: 05508-000, Sao Paulo, SP (Brazil); Sakuraba, Roberto K. [Gerencia de Metrologia das Radiacoes (GMR) - Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Av. Prof. Lineu Prestes, 2242, Cidade Universitaria, CEP: 05508-000, Sao Paulo, SP (Brazil); Sociedade Beneficente Israelita Brasileira - Hospital Albert Einstein (HAE), Avenida Albert Einstein, 665, Morumbi, CEP: 05652-000, Sao Paulo, SP (Brazil); Cruz, Jose C. da [Sociedade Beneficente Israelita Brasileira - Hospital Albert Einstein (HAE), Avenida Albert Einstein, 665, Morumbi, CEP: 05652-000, Sao Paulo, SP (Brazil)

    2012-07-15

    The purpose of this study was the dosimetric evaluation of thermoluminescent detectors of calcium sulphate doped with dysprosium (CaSO{sub 4}:Dy) produced by IPEN compared to the TL response of lithium fluoride doped with magnesium and titanium (LiF:Mg,Ti) dosimeters and microdosimeters produced by Harshaw Chemical Company to clinical photon beams dosimetry (6 and 15 MV) using liquid water and PMMA phantoms. - Highlights: Black-Right-Pointing-Pointer Dosimetric study of thermoluminescent detectors of CaSO{sub 4}:Dy, LiF:Mg,Ti and {mu}LiF:Mg,Ti. Black-Right-Pointing-Pointer Clinical (6 and 15 MV) photon beams dosimetry using liquid water and PMMA phantom. Black-Right-Pointing-Pointer Linear behavior to the dose range (0.1 to 5 Gy). Black-Right-Pointing-Pointer TL response reproducibility better than {+-}4.34%. Black-Right-Pointing-Pointer CaSO{sub 4}:Dy represent a cheaper alternative to the TLD-100.

  9. In vitro and in vivo toxicity of CdTe nanoparticles.

    Science.gov (United States)

    Zhang, Yongbin; Chen, Wei; Zhang, Jun; Liu, Jing; Chen, Guangping; Pope, Carey

    2007-02-01

    Cadmium telluride (CdTe) nanoparticles exhibit strong and stable fluorescence that is attractive for many applications such as biological probing and solid state lighting. The evaluation of nanoparticle toxicity is important for realizing these practical applications. However, no systematic studies of CdTe nanoparticle toxicity have been reported. We investigated and compared the size- and concentration-dependent cytotoxicity of CdTe nanoparticles in human hepatoma HepG2 cells using the MTT assay. CdTe nanoparticles elicited cytotoxicity in a concentration- and size-dependent manner, with smaller-sized particles exhibiting somewhat higher potency. Lesser cytotoxicity of partially purified CdTe-Red particles (following methanol precipitation and resuspension) suggested that free cadmium ions may contribute to cytotoxicity. We also evaluated the acute toxicity of CdTe-Red particles following intravenous exposure in male rats (2 micromol/kg). Few signs of functional toxicity or clinical (urinary or blood) changes were noted. Interestingly, motor activity was transiently reduced (2 hours after treatment) and then significantly increased at a later timepoint (24 hours after dosing). These studies provide a framework for further characterizing the in vitro and in vivo toxic potential of different types of CdTe nanoparticles and suggest that the nervous system may be targeted by these nanoparticles under some conditions.

  10. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  11. Detectors - Electronics; Detecteurs - Electronique

    Energy Technology Data Exchange (ETDEWEB)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

    1998-04-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  12. CdTe quantum dots@luminol as signal amplification system for chrysoidine with chemiluminescence-chitosan/graphene oxide-magnetite-molecularly imprinting sensor.

    Science.gov (United States)

    Duan, Huimin; Li, Leilei; Wang, Xiaojiao; Wang, Yanhui; Li, Jianbo; Luo, Chuannan

    2016-01-15

    A sensitive chemiluminescence (CL) sensor based on chemiluminescence resonance energy transfer (CRET) in CdTe quantum dots@luminol (CdTe QDs@luminol) nanomaterials combined with chitosan/graphene oxide-magnetite-molecularly imprinted polymer (Cs/GM-MIP) for sensing chrysoidine was developed. CdTe QDs@luminol was designed to not only amplify the signal of CL but also reduce luminol consumption in the detection of chrysoidine. On the basis of the abundant hydroxy and amino, Cs and graphene oxide were introduced into the GM-MIP to improve the adsorption ability. The adsorption capacities of chrysoidine by both Cs/GM-MIP and non-imprinted polymer (Cs/GM-NIP) were investigated, and the CdTe QDs@luminol and Cs/GM-MIP were characterized by UV-vis, FTIR, SEM and TEM. The proposed sensor can detect chrysoidine within a linear range of 1.0×10(-7) - 1.0×10(-5) mol/L with a detection limit of 3.2×10(-8) mol/L (3δ) due to considerable chemiluminescence signal enhancement of the CdTe quantum dots@luminol detector and the high selectivity of the Cs/GM-MIP system. Under the optimal conditions of CL, the CdTe QDs@luminol-Cs/GM-MIP-CL sensor was used for chrysoidine determination in samples with satisfactory recoveries in the range of 90-107%.

  13. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

  14. High-throughput and rapid fluorescent visualization sensor of urinary citrate by CdTe quantum dots.

    Science.gov (United States)

    Zhuo, Shujuan; Gong, Jiajia; Zhang, Ping; Zhu, Changqing

    2015-08-15

    In this paper, we have presented a novel CdTe quantum dots (QDs) based fluorescent sensor for visual and turn-on sensing of citrate in human urine samples. The europium ion (Eu(3+)) can lead to the fluorescence quenching of thioglycollic acid (TGA) modified CdTe QDs due to photoinduced electron transfer accompanied by the change of emission color from yellow to orange. Next, addition of citrate breaks the preformed assembly because citrate can replace the CdTe QDs, based on the fact that the Eu(3+) ion displays higher affinity with citrate than the CdTe QDs. Thus the photoinduced electron transfer is switched off, and the fluorescence emission of CdTe QDs is rapidly (within 5min) recovered, simultaneously, the orange emission color restores to yellow. Such proposed strategy may conveniently discriminate the patient of renal stone from normal person by naked eyes. In addition to visualization detection, the fluorescence responses can be used for well quantifying citrate in the range of 0.67-133μM. So, the present, simple, low-cost and visualized citrate fluorescence sensor has great potential in the applications for earlier screening in clinical detection.

  15. Full breast digital mammography with an amorphous silicon-based flat panel detector: Physical characteristics of a clinical prototype

    OpenAIRE

    2000-01-01

    The physical characteristics of a clinical prototype amorphous silicon-based flat panel imager for full-breast digital mammography have been investigated. The imager employs a thin thallium doped CsI scintillator on an amorphous silicon matrix of detector elements with a pixel pitch of 100 μm. Objective criteria such as modulation transfer function (MTF), noise power spectrum, detective quantum efficiency (DQE), and noise equivalent quanta were employed for this evaluation. The presampling MT...

  16. CdTe Films Deposited by Closed-space Sublimation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at substrate temperature higher than 400℃. And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity. Treatment with CdCl2 methanol solution promotes the crystallite growth of CdTe films during annealing.

  17. Synthesis and Surface Modification of CdTe Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    CdTe nanocrystals were prepared in aqueous solution via the reaction between Cd2+ and NaHTe in the presence of mercaptoacetic acid. Interactions between CdTe nanocrystals and phenylalanine were formed via electrostatic/coordinate self-assembly. The photoluminescence intensity of CdTe nanocrystals was improved obviously. The interaction mechanism was discussed and was considered to be surface passivation.

  18. Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

    Energy Technology Data Exchange (ETDEWEB)

    Rosaz, M

    1997-10-24

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

  19. SU-E-I-51: Quantitative Assessment of X-Ray Imaging Detector Performance in a Clinical Setting - a Simple Approach Using a Commercial Instrument

    Energy Technology Data Exchange (ETDEWEB)

    Sjoeberg, J; Bujila, R; Omar, A; Nowik, P; Mobini-Kesheh, S; Lindstroem, J [Karolinska University Hospital, Solna (Sweden)

    2015-06-15

    Purpose: To measure and compare the performance of X-ray imaging detectors in a clinical setting using a dedicated instrument for the quantitative determination of detector performance. Methods: The DQEPro (DQE Instruments Inc., London, Ontario Canada) was used to determine the MTF, NPS and DQE using an IEC compliant methodology for three different imaging modalities: conventional radiography (CsI-based detector), general-purpose radioscopy (CsI-based detector), and mammography (a-Se based detector). The radiation qualities (IEC) RQA-5 and RQA-M-2 were used for the CsI-based and a-Se-based detectors, respectively. The DQEPro alleviates some of the difficulties associated with DQE measurements by automatically positioning test devices over the detector, guiding the user through the image acquisition process and providing software for calculations. Results: A comparison of the NPS showed that the image noise of the a-Se detector was less correlated than the CsI detectors. A consistently higher performance was observed for the a-Se detector at all spatial frequencies (MTF: 0.97@0.25 cy/mm, DQE: 0.72@0.25 cy/mm) and the DQE drops off slower than for the CsI detectors. The CsI detector used for conventional radiography displayed a higher performance at low spatial frequencies compared to the CsI detector used for radioscopy (DQE: 0.65 vs 0.60@0.25 cy/mm). However, at spatial frequencies above 1.3 cy/mm, the radioscopy detector displayed better performance than the conventional radiography detector (DQE: 0.35 vs 0.24@2.00 cy/mm). Conclusion: The difference in the MTF, NPS and DQE that was observed for the two different CsI detectors and the a-Se detector reflect the imaging tasks that the different detector types are intended for. The DQEPro has made the determination and calculation of quantitative metrics of X-ray imaging detector performance substantially more convenient and accessible to undertake in a clinical setting.

  20. Automatic Control System for the High Pressure CdTe Crystal Growth Furnace

    OpenAIRE

    Petr Praus; Eduard Belas; Jiri Bok; Roman Fesh; Jan Franc; Pavel Hoschl

    2006-01-01

    CdTe and (CdZn)Te bulk single crystals have been widely used as substrates for MBE and LPE epitaxy of infrared (HgCd)Te as well as gamma- and X-ray detectors. The Cd1-xZnxTe (x = 0.04-0.1) single crystals with diameter up to 100 mm and height at most 40 mm were prepared in our laboratory in a vertical arrangement by gradual cooling of the melt (the Vertical Gradient Freezing method). Achievement of excellent crystal quality required full control of Cd pressure during the growth process and ap...

  1. Gamma ray detector modules

    Science.gov (United States)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  2. CdTe nanoparticles for the deposition of CdTe films using close spaced sublimation

    Science.gov (United States)

    Schumm, Benjamin; Althues, Holger; Kaskel, Stefan

    2010-08-01

    In this work a nanostructured CdTe powder was applied as a source material for CdTe film deposition via Close Spaced Sublimation (CSS). Growth kinetics and the resulting film properties were studied and compared to the films deposited from a commercially available CdTe bulk powder as source. The nanostructured powder was synthesized by a solvothermal elemental reaction of Cd and Te in ethylene diamine leading to particles of around 100-500 nm in diameter with a specific surface area of 4.1 m 2 g -1. An increase in the deposition rate by the factor of 1.7 was observed for the nanostructured powder as compared to the bulk material.

  3. Thin-film CdTe cells: Reducing the CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Plotnikov, V.; Liu, X.; Paudel, N.; Kwon, D.; Wieland, K.A.; Compaan, A.D., E-mail: alvin.compaan@utoledo.edu

    2011-08-31

    Polycrystalline thin-film CdTe is currently the dominant thin-film technology in world-wide PV manufacturing. With finite Te resources world-wide, it is appropriate to consider the limits to reducing the thickness of the CdTe layer in these devices. In our laboratory we have emphasized the use of magnetron sputtering for both CdS and CdTe achieving AM1.5 efficiency over 13% on 3 mm soda-lime glass with commercial TCO and 14% on 1 mm aluminosilicate glass. This deposition technique is well suited to good control of very thin layers and yields relatively small grain size which also facilitates high performance with ultra-thin layers. This paper describes our magnetron sputtering studies for fabrication of very thin CdTe cells. Our thinnest cells had CdTe thicknesses of 1 {mu}m, 0.5 {mu}m and 0.3 {mu}m and yielded efficiencies of 12%, 9.7% and 6.8% respectively. With thinner cells Voc, FF and Jsc are reduced. Current-voltage (J-V), temperature dependent J-V (J-V-T) and apparent quantum efficiency (AQE) measurements provide valuable information for understanding and optimizing cell performance. We find that the stability under light soak appears not to depend on CdTe thickness from 2.5 to 0.5 {mu}m. The use of semitransparent back contacts allows the study of bifacial response which is particularly useful in understanding carrier collection in the very thin devices.

  4. Schottky Barrier CdTe(Cl) Detectors for Planetary Missions

    Science.gov (United States)

    Eisen, Yosef; Floyd, Samuel

    2002-10-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm × 2mm × 1mm and segmented monolithic 3cm × 3 cm × 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm × 2mm × 1mm CdTe operating at -30°C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm × 3cm × 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed.

  5. Semen Pathology Detector and Clinical Significance%精液病理学检测与临床意义

    Institute of Scientific and Technical Information of China (English)

    曹兴午; 王立红; 袁长巍

    2013-01-01

    This text has given a commentary on the status of semen detector,described the objective and scope of semen pathology detector,the content of semen exfoliative cytology and the clinical significance of genital cell apoptosis detector. It has discussed the feasibility of replacement method for testicle biopsy,analyzed the testicle damage caused by virus inferc-tion,human cytomegalo-virus, herpes simplex virus and epidemic parottitis mumps inferctions, also the infertility resulted from apoptosis. The authors have reported the inclusion bodies in the semen detector and their category typing,described the histopathological degeneration of acute orchitis,and the form character of hemosiderin granule crystal in semen detector.%该文就精液检测的现状进行评述,提出精液病理学检测的目的、范围和精液脱落细胞学内容以及生精细胞凋亡检测的临床意义,对取代睾丸活检的可行性进行探讨.对病毒性感染:人巨细胞病毒、单纯疱疹病毒Ⅱ型和流行性腮腺炎感染,导致睾丸损伤及生精细胞凋亡引起不育症进行分析.对精液中检出包涵体和类型进行报道,介绍急性睾丸炎病理组织变性与精液中检出含铁血黄素结晶形态特征.

  6. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  7. Lattice sites of Li in CdTe

    NARCIS (Netherlands)

    Restle, M; BharuthRam, K; Quintel, H; Ronning, C; Hofsass, H; Wahl, U; Jahn, SG

    1996-01-01

    The lattice site occupation of Li in CdTe at temperatures between 40 and 500 K was investigated with the emission channeling method. Radioactive Li-8 ions were implanted at low doses into CdTe single crystals. Emission channeling patterns of alpha-particles emitted in the nuclear decay of Li-8 (t(1/

  8. Early clinical experience utilizing scintillator with optical fiber (SOF) detector in clinical boron neutron capture therapy: its issues and solutions

    OpenAIRE

    Ishikawa, Masayori; Yamamoto, Tetsuya; Matsumura, Akira; Hiratsuka, Junichi; Miyatake, Shin-Ichi; Kato, Itsuro; Sakurai, Yoshinori; Kumada, Hiroaki; Shrestha, Shubhechha J.; ONO, KOJI

    2016-01-01

    Background Real-time measurement of thermal neutrons in the tumor region is essential for proper evaluation of the absorbed dose in boron neutron capture therapy (BNCT) treatment. The gold wire activation method has been routinely used to measure the neutron flux distribution in BNCT irradiation, but a real-time measurement using gold wire is not possible. To overcome this issue, the scintillator with optical fiber (SOF) detector has been developed. The purpose of this study is to demonstrate...

  9. Photon Counting Energy Dispersive Detector Arrays for X-ray Imaging.

    Science.gov (United States)

    Iwanczyk, Jan S; Nygård, Einar; Meirav, Oded; Arenson, Jerry; Barber, William C; Hartsough, Neal E; Malakhov, Nail; Wessel, Jan C

    2009-01-01

    The development of an innovative detector technology for photon-counting in X-ray imaging is reported. This new generation of detectors, based on pixellated cadmium telluride (CdTe) and cadmium zinc telluride (CZT) detector arrays electrically connected to application specific integrated circuits (ASICs) for readout, will produce fast and highly efficient photon-counting and energy-dispersive X-ray imaging. There are a number of applications that can greatly benefit from these novel imagers including mammography, planar radiography, and computed tomography (CT). Systems based on this new detector technology can provide compositional analysis of tissue through spectroscopic X-ray imaging, significantly improve overall image quality, and may significantly reduce X-ray dose to the patient. A very high X-ray flux is utilized in many of these applications. For example, CT scanners can produce ~100 Mphotons/mm(2)/s in the unattenuated beam. High flux is required in order to collect sufficient photon statistics in the measurement of the transmitted flux (attenuated beam) during the very short time frame of a CT scan. This high count rate combined with a need for high detection efficiency requires the development of detector structures that can provide a response signal much faster than the transit time of carriers over the whole detector thickness. We have developed CdTe and CZT detector array structures which are 3 mm thick with 16×16 pixels and a 1 mm pixel pitch. These structures, in the two different implementations presented here, utilize either a small pixel effect or a drift phenomenon. An energy resolution of 4.75% at 122 keV has been obtained with a 30 ns peaking time using discrete electronics and a (57)Co source. An output rate of 6×10(6) counts per second per individual pixel has been obtained with our ASIC readout electronics and a clinical CT X-ray tube. Additionally, the first clinical CT images, taken with several of our prototype photon-counting and

  10. Auger relative sensitivivity factors for CdTe oxide

    OpenAIRE

    P. Bartolo-Pérez; J. L. Peña; M.H. Farías

    1999-01-01

    The Auger lineshape of Te MNN in measurements of Auger spectra of CdTe oxide films with various degrees of oxidation was analyzed. By using standards from stoichiometric compounds, Auger relative sensitivity factors (RSF´s) of Cd, Te and O for CdTe oxide thin films were obtained. The value of the RFS of oxygen is about constant, 0.27-0.28, for the standard compound, CdO, TeO2 and CdTeO3 (considering the RSF of Cd as 1). However, the obtained RSF of Te changes from 0.69 in CdTe up to 0.87 in C...

  11. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  12. Visible response of λc=2.5´m HgCdTe HDVIP detectors

    Science.gov (United States)

    Stapelbroek, Maryn G.; Guptill, Matthew; D'Souza, Arvind I.; Bryan, Elizabeth R.; Beck, J. D.; Kinch, M. A.; Robinson, James E.

    2004-08-01

    Cu-doped HDVIP detectors with different cut-off wavelengths are routinely manufactured. The DRS HDVIP detector technology is a front-side-illuminated detector technology. There is no substrate to absorb the visible photons as in backside-illuminated detectors and these detectors should be well suited to respond to visible light. However, HDVIP detectors are passivated using CdTe that absorbs the visible light photons. CdTe strongly absorbs photons of wavelength shorter than about 800 nm. Detectors with varying thickness of CdTe passivation layers were fabricated to investigate the visible response of the 2.5-μm-cutoff detectors. A model was developed to predict the quantum efficiency of the detectors in the near infrared and visible wavelength regions as a function of CdTe thickness. Individual photodiodes (λc = 2.5 μm) in test bars were examined. Measurements of the quantum efficiency as a function of wavelength region will be presented and compared to the model predictions.

  13. Ultrafast nuclear myocardial perfusion imaging on a new gamma camera with semiconductor detector technique: first clinical validation

    Energy Technology Data Exchange (ETDEWEB)

    Buechel, Ronny R.; Herzog, Bernhard A.; Husmann, Lars; Burger, Irene A.; Pazhenkottil, Aju P.; Treyer, Valerie; Valenta, Ines; Schulthess, Patrick von; Nkoulou, Rene; Wyss, Christophe A. [University Hospital Zurich, Cardiac Imaging, Zurich (Switzerland); Kaufmann, Philipp A. [University Hospital Zurich, Cardiac Imaging, Zurich (Switzerland); University of Zurich, Zurich Center for Integrative Human Physiology (ZIHP), Zurich (Switzerland)

    2010-04-15

    To assess the diagnostic performance of a novel ultrafast cardiac gamma camera with cadmium-zinc-telluride (CZT) solid-state semiconductor detectors for nuclear myocardial perfusion imaging (MPI). The study group comprised 75 consecutive patients (55 men, BMI range 19-45 kg/m{sup 2}) who underwent a 1-day {sup 99m}Tc-tetrofosmin adenosine-stress/rest imaging protocol. Scanning was performed first on a conventional dual-detector SPECT gamma camera (Ventri, GE Healthcare) with a 15-min acquisition time each for stress and rest. All scans were immediately repeated on an ultrafast CZT camera (Discovery 530 NMc, GE Healthcare) with a 3-min scan time for stress and a 2-min scan time for rest. Clinical agreement (normal, ischaemia, scar) between CZT and SPECT was assessed for each patient and for each coronary territory using SPECT MPI as the reference standard. Segmental myocardial tracer uptake values (percent of maximum) using a 20-segment model and left ventricular ejection fraction (EF) values obtained using CZT were compared with those obtained using conventional SPECT by intraclass correlation and by calculating Bland-Altman limits of agreement. There was excellent clinical agreement between CZT and conventional SPECT on a per-patient basis (96.0%) and on a per-vessel territory basis (96.4%) as shown by a highly significant correlation between segmental tracer uptake values (r=0.901, p<0.001). Similarly, EF values for both scanners were highly correlated (r=0.976, p<0.001) with narrow Bland-Altman limits of agreement (-5.5-10.6%). The novel CZT camera allows a more than fivefold reduction in scan time and provides clinical information equivalent to conventional standard SPECT MPI. (orig.)

  14. Clinical evaluation of digital angiographic system equipped with the Safire' flat-panel detector of a direct conversion type

    Energy Technology Data Exchange (ETDEWEB)

    Miura, Yoshiaki; Miura, Yusuke; Goto, Keiichi [Shimadzu Corporation, Medical Systems Division, Research and Development, Kyoto (JP)] [and others

    2003-06-01

    This report presents a report on clinical evaluation of our newly developed flat-panel X-ray detector of a direct conversion type, designed to provide images of a resolution higher than, or at least equal to, that ensured by X-ray photographic films, in clinical digital X-ray cinematography. This new detector was named 'Safire' the acronym of 'Shimadzu advanced flat imaging receptor', emphasizing its high technological level, such as the capability to ensure high quality of images. The clinical evaluation of Shimadzu DIGITEX Premier digital angiography system, equipped with this new flat-panel X-ray detector of a direct conversion type, has been started in March, 2003, at the Kokura Memorial Hospital in Kyushu, Japan. (author)

  15. Full breast digital mammography with an amorphous silicon-based flat panel detector: physical characteristics of a clinical prototype.

    Science.gov (United States)

    Vedantham, S; Karellas, A; Suryanarayanan, S; Albagli, D; Han, S; Tkaczyk, E J; Landberg, C E; Opsahl-Ong, B; Granfors, P R; Levis, I; D'Orsi, C J; Hendrick, R E

    2000-03-01

    The physical characteristics of a clinical prototype amorphous silicon-based flat panel imager for full-breast digital mammography have been investigated. The imager employs a thin thallium doped CsI scintillator on an amorphous silicon matrix of detector elements with a pixel pitch of 100 microm. Objective criteria such as modulation transfer function (MTF), noise power spectrum, detective quantum efficiency (DQE), and noise equivalent quanta were employed for this evaluation. The presampling MTF was found to be 0.73, 0.42, and 0.28 at 2, 4, and 5 cycles/mm, respectively. The measured DQE of the current prototype utilizing a 28 kVp, Mo-Mo spectrum beam hardened with 4.5 cm Lucite is approximately 55% at close to zero spatial frequency at an exposure of 32.8 mR, and decreases to approximately 40% at a low exposure of 1.3 mR. Detector element nonuniformity and electronic gain variations were not significant after appropriate calibration and software corrections. The response of the imager was linear and did not exhibit signal saturation under tested exposure conditions.

  16. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  17. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  18. Controlled Synthesis of Nanoscale CdTe Urchins

    Institute of Scientific and Technical Information of China (English)

    BAO Jian; SHEN Yue; SUN Yan; YUE Yang; CHEN Xin; DAI Ning

    2009-01-01

    We presented a simple route to prepare nanoscale CdTe urchins in a tri-n-octylphosphine oxide(TOPO)system.CdTe urchins consisted of a core and several attached arms.The arms were ca.3 nm wide,and their lengths could be controlled with the reaction time.The authors investigated the optical absorption and structural properties of the prepared CdTe.The lengths of the arms could be tuned into CdTe nanourchins,which led to a change in the photophysical properties of the nanoscale CdTe urchins.The results,including transmission electron microscopy(TEM) and absorption spectra,indicated that mesoporous silica and aminopropyltriethoxysilane(APTES) contributed to the formation of nanoscale CdTe urchins.

  19. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  20. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State Univeristy; Brinkman, Daniel [Arizona State Univeristy; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Dragica, Vasileska [Arizona State Univeristy; Ringhofer, Christian [Arizona State University

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  1. Studies of key technologies for CdTe solar modules

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.

  2. Spatial Distribution of Dopant Incorporation in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt; Al-Jassim, Mowafak

    2016-11-21

    In this work we use state-of-the-art cathodoluminescence (CL) spectrum imaging that provides spectrum-per-pixel mapping of the CL emission to examine how dopant elements are incorporated into CdTe. Emission spectra and intensity are used to monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on theoretical modeling. Our results show that grain boundaries play a role in the incorporation of dopants in CdTe, whether intrinsic or extrinsic. This type of analysis is crucial for providing feedback to design different processing schedules that optimize dopant incorporation in CdTe photovoltaic material, which has struggled to reach high carrier concentration values. Here, we present results on CdTe films exposed to copper, phosphorus, and intrinsic doping treatments.

  3. Visible to SWIR response of HgCdTe HDVIP detectors

    Science.gov (United States)

    D'Souza, A. I.; Robinson, E. W.; Stapelbroek, M. G.; Wong, W.; Skokan, M.; Shih, H.-D.

    2009-05-01

    Detectors that have broadband response from the visible (~ 400 nm) to near infrared (~ 2.5 μm) have remote sensing hyperspectral applications on a single chip. 2.2 and 2.5 μm cutoff detectors permit operation in the 200 K range. The DRS HDVIP detector technology is a front side illuminated detector technology. Consequently, there is no substrate to absorb the visible photons as in backside-illuminated detectors and these 2.2 and 2.5-μm-cutoff detectors should be well suited to respond to visible light. However, HDVIP detectors are passivated using CdTe that absorbs the visible light photons. CdTe with a direct bandgap ~ 1.6 eV strongly absorbs photons of wavelength shorter than about 800 nm. Detectors in 320 x 6 arrays with varying thickness of CdTe passivation layers were fabricated to investigate the visible response of the 2.5-μm-cutoff detectors. The SWIR HDVIP detectors have well known high quantum efficiency (QE) in the near infrared region. Focus here was in acquiring array level data in the visible region of the spectrum. 320 x 6 FPA QE and NEI data was acquired using a 642 nm narrow band filter with 50 % points at 612 nm and 698 nm. The array QE average is ~ 70 % for the array with CdTe passivation thickness = 44.5 nm. The NEI is ~ 5 x 1010 ph/cm2/s at a flux Φ = 5.36 x 1013 ph/cm2/s. QE for an array with CdTe passivation thickness = 44.5 nm is ~ 10 % higher than an array with CdTe passivation thickness = 79.3 nm. In addition, a model that takes into account the complex optical properties of every layer in the HDVIP photodiode architecture was developed to predict the QE of the detectors in the near infrared and visible wavelength regions as a function of CdTe thickness. Measured QE as a function of wavelength is not a good match to the model QE probably due to limitations in the measured QE and knowledge of optical constants that are input into the model.

  4. CdTe Photovoltaic Devices for Solar Cell Applications

    Science.gov (United States)

    2011-12-01

    July 28, 2011 14. ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film solar cells because of...mail.mil Phone: 301 394 0963 ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film ...absorption coefficient allows films as thin as 2 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 17% have been

  5. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  6. Dynamic effects in CdTe quantum-dot LEDs

    OpenAIRE

    Gallardo, D. E.

    2006-01-01

    In this work the electrical and electroluminescence properties CdTe nanocrystal films were analysed. The structure consisted of a multilayer of CdTe nanocrystals deposited by the layer-by-layer technique, sandwiched between an ITO anode and an aluminium cathode. The first part of this work was dedicated to structural and process improvement. Earlier devices, produced through a layer-by-layer (LbL) manual procedure, had an average thickness of 30nm per nanocrystal monolayer,...

  7. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  8. Temperature dependent electroreflectance study of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Raadik, T., E-mail: taavi.raadik@ttu.ee [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J.; Josepson, R.; Hiie, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Potlog, T.; Spalatu, N. [Moldova State University, A. Mateevici str. 60, MD-2009 Chisinau (Moldova, Republic of)

    2013-05-01

    Cadmium telluride is a promising material for large scale photovoltaic applications. In this paper we study CdS/CdTe heterojunction solar cells with electroreflectance spectroscopy. Both CdS and CdTe layers in solar cells were grown sequentially without intermediate processing by the close-space sublimation method. Electroreflectance measurements were performed in the temperature range of T = 100–300 K. Two solar cells were investigated with conversion efficiencies of 4.1% and 9.6%. The main focus in this work was to study the temperature dependent behavior of the broadening parameter and the bandgap energy of CdTe thin film in solar cells. Room temperature bandgap values of CdTe were E{sub g} = 1.499 eV and E{sub g} = 1.481 eV for higher and lower efficiency solar cells, respectively. Measured bandgap energies are lower than for single crystal CdTe. The formation of CdTe{sub 1−x}S{sub x} solid solution layer on the surface of CdTe is proposed as a possible cause of lower bandgap energies. - Highlights: ► Temperature dependent electroreflectance measurements of CdS/CdTe solar cells ► Investigation of junction properties between CdS and CdTe ► Formation of CdTe{sub 1−} {sub x}S{sub x} solid solution layer in the junction area.

  9. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    Science.gov (United States)

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  10. CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications

    CERN Document Server

    Triboulet, Robert

    Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.

  11. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  12. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions.

    Science.gov (United States)

    Glick, Stephen J; Didier, Clay

    2013-10-14

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5-3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion

  13. Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

    Science.gov (United States)

    Ariño-Estrada, G.; Chmeissani, M.; de Lorenzo, G.; Kolstein, M.; Puigdengoles, C.; García, J.; Cabruja, E.

    2014-12-01

    We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτe/h (mobility-lifetime product) are in agreement with earlier published data.

  14. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1993-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  15. Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Buton, C., E-mail: clement.buton@synchrotron-soleil.fr [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Dawiec, A. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Graber-Bolis, J.; Arnaud, K. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Bérar, J.F.; Blanc, N.; Boudet, N. [Université Grenoble Alpes, Institut NÉEL, F-38042 Grenoble (France); CNRS, Institut NÉEL, F-38042 Grenoble (France); Clémens, J.C.; Debarbieux, F. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Delpierre, P.; Dinkespiler, B. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Gastaldi, T. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Hustache, S. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Morel, C.; Pangaud, P. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Perez-Ponce, H. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Vigeolas, E. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France)

    2014-09-11

    The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and {sup 241}Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

  16. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B., E-mail: gnade@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, G. R.; Allee, D. R. [Flexible Display Center, Arizona State University, Phoenix, Arizona 85284 (United States); Sastré-Hernández, J.; Contreras-Puente, G. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Mexico City 07738 (Mexico); Mendoza-Pérez, R. [Universidad Autónoma de la Ciudad de México, Mexico City 09790 (Mexico)

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  17. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  18. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    Science.gov (United States)

    Antier, S.; Ferrando, P.; Limousin, O.; Caroli, E.; Curado da Silva, R. M.; Blondel, C.; Chipaux, R.; Honkimaki, V.; Horeau, B.; Laurent, P.; Maia, J. M.; Meuris, A.; Del Sordo, S.; Stephen, J. B.

    2015-06-01

    Since the initial exploration of the X- and soft γ-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars, black holes, and Active Galactic Nuclei are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical processes in these high energy sources, allowing the discrimination between competing models which may otherwise all be consistent with other types of measurement. This is why most of the projects for the next generation of space missions covering the few tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability, in this energy range, is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The compact hard X-ray imaging spectrometer module, developed in CEA with the generic name of "Caliste" module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe crystal, the other one on a CdZnTe crystal, which have been exposed to linearly polarized beams at the European Synchrotron Radiation Facility (ESRF). These results, obtained at 200 and 300 keV, demonstrate the capability of these modules to detect Compton events and to give an accurate determination of the polarization parameters (polarization angle and fraction) of the incoming beam. For example, applying an optimized selection to our data set, equivalent to select 90° Compton scattered interactions in the detector plane, we find a modulation factor Q of 0.78 ± 0.06 in the 200-300 keV range. The polarization angle and fraction are derived with accuracies of approximately 1° and 5 % respectively for both CdZnTe and CdTe crystals. The

  19. Design of a hybrid gas proportional counter with CdTe guard counters for sup 1 sup 4 C dating system

    CERN Document Server

    Zhang, L; Hinamoto, N; Nakazawa, M; Yoshida, K

    2002-01-01

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a sup 1 sup 4 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller t...

  20. Resetting the Defect Chemistry in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  1. Study of Back Contacts for CdTe Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    ZnTe/ZnTe∶Cu layer is used as a complex back contact. The parameters of CdTe solar cells with and without the complex back contacts are compared. The effects of un-doped layer thickness, doped concentration and post-deposition annealing temperature of the complex layer on solar cells performance are investigated.The results show that ZnTe/ZnTe∶Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells. Un-doped layer and post-deposition annealing of high temperature can increase open voltage. Using the complex back contact, a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained.

  2. Recent advances in thin film CdTe solar cells

    Science.gov (United States)

    Ferekides, Chris S.; Ceekala, Vijaya; Dugan, Kathleen; Killian, Lawrence; Oman, Daniel; Swaminathan, Rajesh; Morel, Don

    1996-01-01

    CdTe thin film solar cells have been fabricated on a variety of glass substrates (borosilicate and soda lime). The CdS films were deposited to a thickness of 500-2000 Å by the chemical bath deposition (CBD), rf sputtering, or close spaced sublimation (CSS) processes. The CdTe films were deposited by CSS in the temperature range of 450-625 °C. The main objective of this work is to fabricate high efficiency solar cells using processes that can meet low cost manufacturing requirements. In an attempt to enhance the blue response of the CdTe cells, ZnS films have also been prepared (CBD, rf sputtering, CSS) as an alternative window layer to CdS. Device behavior has been found to be consistent with a recombination model.

  3. Development and performance of a gamma-ray imaging detector

    Science.gov (United States)

    Gálvez, J. L.; Hernanz, M.; Álvarez, J. M.; La Torre, M.; Álvarez, L.; Karelin, D.; Lozano, M.; Pellegrini, G.; Ullán, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2012-09-01

    In the last few years we have been working on feasibility studies of future instruments in the gamma-ray range, from several keV up to a few MeV. The innovative concept of focusing gamma-ray telescopes in this energy range, should allow reaching unprecedented sensitivities and angular resolution, thanks to the decoupling of collecting area and detector volume. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs), Pulsars, Active Galactic Nuclei (AGN). In order to achieve the needed performance, a gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. In order to fulfill the combined requirement of high detection efficiency with good spatial and energy resolution, an initial prototype of a gamma-ray imaging detector based on CdTe pixel detectors is being developed. It consists of a stack of several layers of CdTe detectors with increasing thickness, in order to enhance the gamma-ray absorption in the Compton regime. A CdTe module detector lies in a 11 x 11 pixel detector with a pixel pitch of 1mm attached to the readout chip. Each pixel is bump bonded to a fan-out board made of alumina (Al2O3) substrate and routed to the corresponding input channel of the readout ASIC to measure pixel position and pulse height for each incident gamma-ray photon. We will report the main features of the gamma-ray imaging detector performance such as the energy resolution for a set of radiation sources at different operating temperatures.

  4. Development of a CZT drift ring detector for X and γ ray spectroscopy

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Boothman, V.; Veeramani, P.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2015-04-01

    CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 keV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

  5. Effects of Antimony Doping in Polycrystalline CdTe Thin-Film Solar Cells

    Science.gov (United States)

    Okamoto, Tamotsu; Ikeda, Shigeyuki; Nagatsuka, Satsuki; Hayashi, Ryoji; Yoshino, Kaoru; Kanda, Yohei; Noda, Akira; Hirano, Ryuichi

    2012-10-01

    The effects of antimony (Sb) doping of the CdTe layer in the CdTe solar cells were investigated using Sb-doped CdTe powders as source materials for CdTe deposition by the close-spaced sublimation (CSS) method. Conversion efficiency increased with increasing Sb concentration below 1×1018 cm-3, mainly owing to the improvement of the fill factor. Secondary ion microprobe mass spectrometry (SIMS) depth profile revealed that the Sb impurities at a concentration of approximately 1×1016 cm-3 were incorporated into the CdTe layer when using the Sb-doped CdTe source of 1×1018 cm-3. The observation of surface morphology showed that the grain sizes were improved by Sb addition. Therefore, the improved performance upon Sb addition to CdTe solar cells was probably due to the improvements in crystallinity, such as increased grain size.

  6. CdTe nano-structures for photovoltaic devices

    OpenAIRE

    Corregidor, V.; Alves, L. C.; FRANCO, N.; Barreiros, Maria Alexandra; Sochinskii, N. V.; Alves, E

    2013-01-01

    CdTe nano-structures with diameter of ∼100 nm and variable length (200–600 nm) were fabricated on glass substrates covered with conductive buffer layers such as NiCr, ZAO (ZnO:Al2O3 + Ta2O5) or TiPd alloys. The fabrication process consisted of the starting vapour deposition of metal catalyst dropped layer followed by the isothermal catalyst-prompted vapour growth of CdTe nano-structured layer of controllable shape and surface filling. The effect of buffer layers on the crystallographic orient...

  7. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    OpenAIRE

    Pinheiro,Wagner Anacleto; Falcão, Vivienne Denise; Cruz,Leila Rosa de Oliveira; Ferreira,Carlos Luiz

    2006-01-01

    Unlike other thin film deposition techniques, close spaced sublimation (CSS) requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate) and a sintered C...

  8. Sensitive detection of sodium cromoglycate with glutathione-capped CdTe quantum dots as a novel fluorescence probe.

    Science.gov (United States)

    Hao, Chenxia; Liu, Shaopu; Li, Dan; Yang, Jidong; He, Youqiu

    2015-11-01

    A sensitive and simple analytical strategy for the detection of sodium cromoglycate (SCG) has been established based on a readily detectable fluorescence quenching effect of SCG for glutathione-capped (GSH-capped) CdTe quantum dots (QDs). The fluorescence of GSH-capped CdTe QDs could be efficiently quenched by SCG through electron transfer from GSH-capped CdTe QDs to SCG. Under optimum conditions, the response was linearly proportional to the concentration of SCG between 0.6419 and 100 µg/mL, with a correlation coefficient (R) of 0.9964; the detection limit (3δ/K) was 0.1926 µg/mL. The optimum conditions and the influence of coexisting foreign substances on the reaction were also investigated. The very effective and simple method reported here has been successfully applied to the determination of SCG in synthetic and real samples. It is believed that the established approach could have good prospects for application in the fields of clinical diseases diagnosis and treatment.

  9. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  10. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  11. Intracavity CdTe modulators for CO2 lasers.

    Science.gov (United States)

    Kiefer, J. E.; Nussmeier, T. A.; Goodwin, F. E.

    1972-01-01

    The use of cadmium telluride as an electrooptic material for intracavity modulation of CO2 lasers is described. Included are the predicted and measured effects of CdTe intracavity modulators on laser performance. Coupling and frequency modulation are discussed and experimental results compared with theoretically predicted performance for both techniques. Limitations on the frequency response of the two types of modulation are determined.

  12. Thermal stability of substitutional ag in CdTe

    NARCIS (Netherlands)

    Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

    1996-01-01

    The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the channelin

  13. Catalytic growth of CdTe nanowires by closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Gwangseok; Jung, Younghun [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-11-01

    CdTe nano-/micro-structures with various morphologies were grown by using the closed space sublimation (CSS) method on a sapphire substrate by Au-catalyzed vapor–liquid–solid (VLS) mechanism. Length, diameter, and morphology of the CdTe nano-/micro-structures depended on the growth time and temperature gradient between the substrate and powdered CdTe source. Scanning electron microscopy images showed that an Au catalyst droplet existed at the tips of CdTe nanowires, which confirms that CdTe nanowires were grown by an Au-catalyzed VLS mechanism. Also, we observed that the two-dimensional CdTe film layer initially formed before the growth of the CdTe nano-/micro-wires. The optical and structural properties of CdTe nano-/micro-structures were characterized by X-ray diffraction technique and micro-Raman spectroscopy. Our study demonstrates that diverse CdTe nano-/micro-structures can be fabricated by using Au-catalyzed VLS growth process in a simple CSS chamber by controlling the temperature gradient and growth time. - Highlights: • We demonstrated CdTe nanowires using closed space sublimation method. • Au-catalyst droplets at the tips confirmed vapor–liquid–solid mechanism. • Diameters and lengths increased with increasing temperature gradient and time.

  14. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    Science.gov (United States)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  15. X and {gamma}-Ray imaging CdTe/CdZnTe detectors. From material to imaging; Imagerie X et {gamma}. Detecteurs CdTe/CdZnTe. Du materiau a l'imageur

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-07-01

    This document presents the recent advances made by the Laboratory of electronics and computer science technologies (Leti) of the French atomic energy commission (CEA) in the domain of semiconductor detectors for X- and {gamma}-ray imaging systems. The new generation of detectors is based on the use of cadmium telluride CdTe or its compound CdZnTe, in association with integrated read-out electronics. The advantages of direct conversion for X-ray and {gamma}-ray detectors and the choice of CdTe is presented first. Then some applications of the CdTe detector are presented: high-energy X-ray tomograph for the control of radioactive waste drums, high definition X-ray imager for medical applications, high-energy X-ray imager for military simulation programs, {gamma}-ray imager for astrophysics applications, and a medical gamma camera to replace the standard Anger camera used in nuclear medicine. (J.S.)

  16. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    CERN Document Server

    Antier, S; Limousin, O; Caroli, E; da Silva, R M Curado; Blondel, C; Chipaux, R; Honkimaki, V; Horeau, B; Laurent, P; Maia, J M; Meuris, A; Del Sordo, S; Stephen, J B

    2015-01-01

    Since the initial exploration of soft gamma-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars and black holes are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical process. This is why most of the projects for the next generation of space missions covering the tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The hard X-ray imaging spectrometer module, developed in CEA with the generic name of Caliste module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe cr...

  17. Radiation detectors: needs and prospects

    Energy Technology Data Exchange (ETDEWEB)

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and ..gamma..-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI/sub 2/, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties.

  18. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  19. Characterization of CdTe films deposited at various bath temperatures and concentrations using electrophoretic deposition.

    Science.gov (United States)

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  20. CdTe microwire-based ultraviolet photodetectors aligned by a non-uniform electric field

    Science.gov (United States)

    Park, Hyunik; Yang, Gwangseok; Chun, Seungju; Kim, Donghwan; Kim, Jihyun

    2013-07-01

    We report on ultraviolet (UV) photodetectors fabricated by positioning Cadmium Telluride (CdTe) microwires (μWs) precisely by dielectrophoretic (DEP) force, where CdTe μWs were grown using an Au-catalyst-assisted closed-space-sublimation (CSS) method. The optical properties of CSS-grown CdTe μWs were characterized by micro-photoluminescence and micro-Raman spectroscopies. Optoelectronic characteristics were obtained after CdTe μWs were aligned on a pre-patterned SiO2/Si substrate by a non-uniform electric field. Photocurrents were increased with increasing the light intensities. Fast and reliable photoresponse and recovery were observed when CdTe μWs were exposed to UV illuminations. We demonstrated that high quality CdTe μWs grown by the CSS method have significant potentials as optoelectronic devices.

  1. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Yin, Wan-Jian [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); College of Physics, Optoelectronics and Energy and Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Beijing Computational Science Research Center, Beijing 100094 (China)

    2016-01-28

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  2. Thermal characterization and determination of recombination parameters in CdTe films on glass substrates by using open photoacoustic cell technique

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-T, M.A. [Depto. de C. Basicas, ESCOM-IPN, Av. Miguel Othon de Mendizabal S/N, Col. Lindavista, CP 07738, Mexico DF (Mexico)]. E-mail: mgonzalezt@ipn.mx; Cruz-Orea, A. [Depto. de Fisica, CINVESTAV-IPN, Av. IPN No.2508, Col. San Pedro Zacatenco, CP. 07360, Mexico DF (Mexico); Albor-A, M.L. de [Depto. de Fisica, ESFM-IPN, Edif. 9, U.P. ' Adolfo Lopez Mateos' , CP 07738, Mexico DF (Mexico); Castillo-A, F. de L [Depto. de Fisica, ESFM-IPN, Edif. 9, U.P. ' Adolfo Lopez Mateos' , CP 07738, Mexico DF (Mexico)

    2005-06-01

    CdTe is a semiconductor with a wide variety of applications and perspectives for electronic industry (high-efficiency photoelectric cells, infrared radiation detectors, etc.). In the present work, we used photoacoustic (PA) technique to study the thermal properties and the surface recombination velocity in CdTe/glass samples. Experimental PA phase signal as a function of modulation frequency in a heat transmission configuration was fitted to the theoretical expression for PA signal, which takes into account the heat sources resulting from the absorption of light in semiconductors and the nonradiative processes involved, which depend on their thermal, optical and electronic transport properties. By this procedure, it was possible to determine the thermal diffusivity and the surface recombination velocity in these samples. The studied samples were thin polycrystalline CdTe film deposited on glass slides. CdTe layers were deposited by a hot-wall closed-spaced vapor transport method, known as gradient recrystallization and growth. The values for the deposition parameters used in this study were the following: 700 deg. C for the source temperature and 450 and 550 deg. C for the substrate temperatures with three different deposition times from 5 to 20 min (then three different film thicknesses were obtained). A clear increment in the surface velocity and surface roughness is observed as the film thickness is increased.

  3. Study of a new architecture of gamma cameras with Cd/ZnTe/CdTe semiconductors; Etude d'une nouvelle architecture de gamma camera a base de semi-conducteurs CdZnTe /CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guerin, L

    2007-11-15

    This thesis studies new semi conductors for gammas cameras in order to improve the quality of image in nuclear medicine. The chapter 1 reminds the general principle of the imaging gamma, by describing the radiotracers, the channel of detection and the types of Anger gamma cameras acquisition. The physiological, physical and technological limits of the camera are then highlighted, to better identify the needs of future gamma cameras. The chapter 2 is dedicated to a bibliographical study. At first, semi-conductors used in imaging gamma are presented, and more particularly semi-conductors CDTE and CdZnTe, by distinguishing planar detectors and monolithic pixelated detectors. Secondly, the classic collimators of the gamma cameras, used in clinical routine for the most part of between them, are described. Their geometry is presented, as well as their characteristics, their advantages and their inconveniences. The chapter 3 is dedicated to a state of art of the simulation codes dedicated to the medical imaging and the methods of reconstruction in imaging gamma. These states of art allow to introduce the software of simulation and the methods of reconstruction used within the framework of this thesis. The chapter 4 presents the new architecture of gamma camera proposed during this work of thesis. It is structured in three parts. The first part justifies the use of semiconducting detectors CdZnTe, in particular the monolithic pixelated detectors, by bringing to light their advantages with regard to the detection modules based on scintillator. The second part presents gamma cameras to base of detectors CdZnTe (prototypes or commercial products) and their associated collimators, as well as the interest of an association of detectors CdZnTe in the classic collimators. Finally, the third part presents in detail the HiSens architecture. The chapter 5 describes both software of simulation used within the framework of this thesis to estimate the performances of the Hi

  4. Luminescence effects of ion-beam bombardment of CdTe surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Olvera, J., E-mail: javier.olvera@uam.e [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Plaza, J.L.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2009-09-15

    In the present work, we report the effect of low-energy ion bombardment on CdTe surfaces. The effect is revealed by FESEM images and photoluminescence (PL) measurements carried out before and after irradiation of CdTe polycrystals by means of an ion-beam sputtering (IBS) system. An important improvement in the luminescence of CdTe was observed in the irradiated areas, related to defect-free surfaces.

  5. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure; Aplicabilidade de um espectrometro portatil de CdTe e NaI (Tl) para a medida da atividade de Cesio-137 ({sup 137}Cs) e Berilio-7 ({sup 7}Be)

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jaquiel Salvi

    2005-02-15

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of {sup 241}Am, {sup 133}Ba, {sup 152}Eu, 3 sources of {sup 137}Cs and soil samples contaminated with {sup 137}Cs. It was performed a factorial planning 2{sup 3} to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 {mu}S and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the {sup 137}Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the {sup 137}Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample {sup 7}Be content the MDA found was 2867 Bq.kg{sup -1} at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the {sup 137}Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured {sup 137}Cs MDA was 71 Bq.kg{sup -1}. For the soil sample {sup 7}Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg{sup -1}. Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma

  6. Characterization of a GEM-based scintillation detector with He-CF4 gas mixture in clinical proton beams

    Science.gov (United States)

    Nichiporov, D.; Coutinho, L.; Klyachko, A. V.

    2016-04-01

    Accurate, high-spatial resolution dosimetry in proton therapy is a time consuming task, and may be challenging in the case of small fields, due to the lack of adequate instrumentation. The purpose of this work is to develop a novel dose imaging detector with high spatial resolution and tissue equivalent response to dose in the Bragg peak, suitable for beam commissioning and quality assurance measurements. A scintillation gas electron multiplier (GEM) detector based on a double GEM amplification structure with optical readout was filled with a He/CF4 gas mixture and evaluated in pristine and modulated proton beams of several penetration ranges. The detector’s performance was characterized in terms of linearity in dose rate, spatial resolution, short- and long-term stability and tissue-equivalence of response at different energies. Depth-dose profiles measured with the GEM detector in the 115-205 MeV energy range were compared with the profiles measured under similar conditions using the PinPoint 3D small-volume ion chamber. The GEM detector filled with a He-based mixture has a nearly tissue equivalent response in the proton beam and may become an attractive and efficient tool for high-resolution 2D and 3D dose imaging in proton dosimetry, and especially in small-field applications.

  7. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Huizhen [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Ma, Jinwen [College of New Energy, Bohai University, Jinzhou, Liaoning 121013 (China); Mu, Yannan [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Department of Physics and Chemistry, Heihe University, Heihe 164300 (China); Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Yang, Haibin, E-mail: yanghb@jlu.edu.cn [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China)

    2015-06-15

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm{sup 2}, which is higher than that of samples prepared at other temperatures. Furthermore, CdCl{sub 2} treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl{sub 2} treatment improved to 2.97 mA/cm{sup 2}, indicating a potential application in photovoltaic devices.

  8. Photoluminescence and Electroluminescence Properties of CdTe Nanoparticles in Conjugated Polymer Hosts

    Institute of Scientific and Technical Information of China (English)

    GUO, Fengqi; XIE, Puhui

    2009-01-01

    The photoinduced energy transfer process from conjugated polymer (PPE4+) to CdTe nanocrystals was found both in solutions and in thin films by a fluorescence spectroscopic technique. Films of PPE4+ blended with CdTe-2 nanocrystals were formed by an electrostatic layer-by-layer assembly technique. Light emitting diodes were fabricated using CdTe-2 as an emitter in PPE4+ host. PPE4+ works as a molecular wire in the energy transfer process from the polymer to the CdTe-2 nanocrystals.

  9. Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T. A.

    2008-09-01

    CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

  10. Effects of CdTe growth conditions and techniques on the efficiency limiting defects and mechanisms in CdTe solar cells

    Science.gov (United States)

    Rohatgi, A.; Chou, H. C.; Jokerst, N. M.; Thomas, E. W.; Ferekides, C.; Kamra, S.; Feng, Z. C.; Dugan, K. M.

    1996-01-01

    CdTe solar cells were fabricated by depositing CdTe films on CdS/SnO2/glass substrates using close-spaced sublimation (CSS) and metalorganic chemical vapor deposition (MOCVD). Te/Cd mole ratio was varied in the range of 0.02 to 6 in the MOCVD growth ambient in an attempt to vary the native defect concentration. Polycrystalline CdTe layers grown by MOCVD and CSS both showed average grain size of about 2 μm. However, the CdTe films grown by CSS were found to be less faceted and more dense compared to the CdTe grown by MOCVD. CdTe growth techniques and conditions had a significant impact on the electrical characteristics of the cells. The CdTe solar cells grown by MOCVD in the Te-rich growth condition and by the CSS technique gave high cell efficiencies of 11.5% and 12.4%, respectively, compared to 6.6% efficient MOCVD cells grown in Cd-rich conditions. This large difference in efficiency is explained on the basis of (a) XRD measurements which showed a higher degree of atomic interdiffusion at the CdS/CdTe interface in high performance devices, (b) Raman measurements which endorsed more uniform and preferred grain orientation by revealing a sharp CdTe TO mode in the high efficiency cells, and (c) carrier transport mechanism which switched from tunneling/interface recombination to depletion region recombination in the high efficiency cells. In this study, Cu/Au layers were evaporated on CdTe for the back contact. Lower efficiency of the Te-rich MOCVD cells, compared to the CSS cells, was attributed to contact related additional loss mechanisms, such as Cd pile-up near Cu/CdTe interface which can give rise to Cd-vacancy defects in the bulk, and higher Cu concentration in the CdTe layer which can cause shunts in the device. Finally, SIMS measurements on the CdTe films of different crystallinity and grain size confirmed that grain boundaries are the main conduits for Cu migration into the CdTe film. Thus larger CdTe grain size or lower grain boundary area per unit volume

  11. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  12. Dependence of CdTe response of bias history

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R.; Sasala, R.A.; Eisgruber, I.L. [Colorado State Univ., Boulder, CO (United States)

    1995-11-01

    Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependent effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.

  13. Photoluminescence study of Cu diffusion in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Grecu, D.; Compaan, A.D. [Department of Physics, University of Toledo, Toledo, Ohio (United States)

    1999-03-01

    We report changes in the photoluminescence spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. Films grown by vapor transport deposition and radio-frequency sputtering as well as single crystal CdTe were included in the study. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy broad-band transition. The PL is subsequently used to explore the effects of electric fields on Cu diffusion. The role of Te as a diffusion barrier for Cu is investigated. {copyright} {ital 1999 American Institute of Physics.}

  14. An NMR quantum computer of the semiconductor CdTe

    Science.gov (United States)

    Shimizu, T.; Goto, A.; Hashi, K.; Ohki, S.

    2002-12-01

    We propose a method to implement a quantum computer by solid-state NMR. We can use the J-coupling for the quantum gate in CdTe. Both Cd and Te have two isotopes with spin 1/2, then we can have 4-qubits. The decoherence by dipole interaction may be minimized by preparing the isotope superlattice grown in the order of— 111Cd- 123Te- 113Cd- 125Te—in the [111] direction and by applying the magnetic field in the direction of [100], the magic angle of the dipole interaction. The optical pumping technique can be used in CdTe to make the initialization of the qubits.

  15. Optical properties of CdTe: Experiment and modeling

    Science.gov (United States)

    Adachi, Sadao; Kimura, Toshifumi; Suzuki, Norihiro

    1993-09-01

    The real epsilon(sub 1) and imaginary epsilon(sub 2) portions of the dielectric function of CdTe were measured by spectroscopic ellipsometry (SE) in the 1.1-5.6 eV photon-energy range at room temperature. The data obtained were analyzed using different theoretical models, namely the harmonic-oscillator approximation, the standard critical point, and the model dielectric function. These models include the E(sub 0), E(sub 0) + Delta(sub 0), E(sub 1), E(sub 1) + Delta(sub 1), and E(sub 2) gaps as the main dispersion mechanisms. The consequences were reported and of particular interest was the difference in the analyzed results between these theoretical models. Dielectric-related optical constants of CdTe, such as the complex refractive index, the absorption coefficient, and normal-incidence reflectivity, were also investigated.

  16. Stepwise cooling technique as a method of growing high-perfection Cl-compensated CdTe

    Science.gov (United States)

    Pavlyuk, M. D.; Subbotin, I. A.; Kanevsky, V. M.; Artemov, V. V.

    2017-01-01

    High-perfection crystals of Cl-compensated CdTe have been grown by the Obreimov-Shubnikov technique using a schedule of stepwise crystal cooling developed with due regard for the correct CdTe phase diagram.

  17. CdTe Nanowires studied by Transient Absorption Microscopy

    Directory of Open Access Journals (Sweden)

    Kuno M.

    2013-03-01

    Full Text Available Transient absorption measurements were performed on single CdTe nanowires. The traces show fast decays that were assigned to charge carrier trapping at surface states. The observed power dependence suggests the existence of a trap-filling mechanism. Acoustic phonon modes were also observed, which were assigned to breathing modes of the nanowires. Both the fundamental breathing mode and the first overtone were observed, and the dephasing times provide information about how the nanowires interact with their environment.

  18. Optical modeling of graphene contacted CdTe solar cells

    Science.gov (United States)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  19. High efficiency CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Marinskiy, D.; Viswanathan, V.; Tetali, B.; Palekis, V.; Selvaraj, P.; Morel, D.L. [University of South Florida, Tampa, FL (United States). Dept. of Electrical Engineering

    2000-02-21

    Cadmium telluride (CdTe) has long been recognized as a strong candidate for thin film solar cell applications. It has a bandgap of 1.45 eV, which is nearly ideal for photovoltaic energy conversion. Due to its high optical absorption coefficient essentially all incident radiation with energy above its band-gap is absorbed within 1-2 {mu}m from the surface. Thin film CdTe solar cells are typically heterojunctions, with cadmium sulfide (CdS) being the n-type junction partner. Small area efficiencies have reached the 16.0% level and considerable efforts are underway to commercialize this technology. This paper will present work carried out at the University South Florida sponsored by the National Renewable Energy Laboratory of the United States Department of Energy, on CdTe/CdS solar cells fabricated using the close spaced sublimation (CSS) process. The CSS technology has attractive features for large area applications such as high deposition rates and efficient material utilization. The structural and optical properties of CSS CdTe and CdS films and junctions will be presented and the influence of some important CSS process parameters will be discussed. (orig.)

  20. Manufacturing of CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bonnet, D. [ANTEC Solar GmbH, Rudisleben (Germany)

    2000-02-21

    Due to its basic physical and chemical properties CdTe has become a favoured base material for thin film solar cells, using robust, high-throughput manufacturing procedures. The technology shows significant potential for attaining cost levels of <0.5 Euro/W{sub p}. Close-spaced sublimation (CSS) is the fastest and simplest deposition process for both semiconductors used, CdTe and CdS, permitting in-line production at a high linear speed of about 1 m/min. The individual manufacturing steps for integrated modules are explained in view of their incorporation into the production line. ANTEC solar GmbH is engaged to enter the production of CdTe thin film modules on a scale of 10 MW{sub p} (100000 m{sup 2}) per annum, using CSS as the deposition procedure for the semiconductor films, and high-rate in-line sputtering for transparent and opaque contacts. Standard module size will be 60 x 120 cm{sup 2}. The production line is presently under construction. (orig.)

  1. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  2. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    Science.gov (United States)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  3. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  4. Temperature-dependent photoluminescence of highly luminescent water-soluble CdTe quantum dots

    Institute of Scientific and Technical Information of China (English)

    Ji Wei Liu; Yu Zhang; Cun Wang Ge; Yong Long Jin; Sun Ling Hu; Ning Gu

    2009-01-01

    Highly luminescent water-soluble CdTe quantum dots (QDs) have been synthesized with an electrogenerated precursor. The obtained CdTe QDs can possess good crystallizability, high quantum yield (QY) and favorable stability. Furthermore, a detection system is designed firstly for the investigation of the temperature-dependent PL of the QDs.

  5. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  6. Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition

    Science.gov (United States)

    Soshnikov, I. P.; Semenov, A. A.; Belyavskii, P. Yu.; Shtrom, I. V.; Kotlyar, K. P.; Lysak, V. V.; Kudryashov, D. A.; Pavlov, S. I.; Nashchekin, A. V.; Cirlin, G. E.

    2016-12-01

    We report the possibility of autocatalytic synthesis of highly crystalline perfect CdTe nanowires by magnetron presputtering deposition through the windows in ultrathin layers of SiO2. The photoluminescence spectra of obtained CdTe nanowires exhibit an emission band in the 1.4-1.7 eV region, indicating crystalline perfection of the nanowires.

  7. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  8. Single CdTe microwire photodetectors grown by close-spaced sublimation method.

    Science.gov (United States)

    Yang, Gwangseok; Kim, Byung-Jae; Kim, Donghwan; Kim, Jihyun

    2014-08-11

    We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10(-3) cm2 V(-1) s(-1). Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.

  9. NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

    Energy Technology Data Exchange (ETDEWEB)

    2016-05-01

    NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costs less than fossil fuels.

  10. Electrodeposition, characterization and photo electrochemical properties of CdSe and CdTe

    Directory of Open Access Journals (Sweden)

    Atef Y. Shenouda

    2015-03-01

    Full Text Available CdSe and CdTe are electrodeposited using 0.1 M Cd2+ and different ion concentrations of Se and Te. The effect of the temperature on the electrodeposition process is also studied. The crystal structure of the deposited CdSe and CdTe is investigated by X-ray diffraction (XRD. Scanning electron microscopy (SEM of samples deposited at optimized parameters reveals that CdSe has spongy spherical grains while CdTe has coralloid morphology. Optical absorption shows the presence of direct transition with band gap energy 1.96 and 1.51 eV for CdSe and CdTe, respectively. The highest photo-conversion efficiencies of electrodeposited CdSe and CdTe films per unit area are 6% and 9.6%, respectively that achieved under simple laboratory conditions.

  11. Automatic Control System for the High Pressure CdTe Crystal Growth Furnace

    Directory of Open Access Journals (Sweden)

    Petr Praus

    2006-08-01

    Full Text Available CdTe and (CdZnTe bulk single crystals have been widely used as substrates for MBE and LPE epitaxy of infrared (HgCdTe as well as gamma- and X-ray detectors. The Cd1-xZnxTe (x = 0.04-0.1 single crystals with diameter up to 100 mm and height at most 40 mm were prepared in our laboratory in a vertical arrangement by gradual cooling of the melt (the Vertical Gradient Freezing method. Achievement of excellent crystal quality required full control of Cd pressure during the growth process and application of high Cd pressures (up to 4 bar at growth temperature. An electronic control system was designed to control both temperature and internal pressure of two zones CZT crystal growth furnace by using two high performance PID controllers/setpoint programmers. Two wire current loop serial communication bus was used for the data exchange and computer control of the furnace electronics setup. Control software was written to supervise the crystal growth process and to collect all important data and parameters.

  12. Recent developments in a CdTe-based x-ray detector for digital radiography

    Science.gov (United States)

    Glasser, Francis; Martin, Jean-Luc; Thevenin, Bernard; Schermesser, Patrick; Pantigny, Philippe; Laurent, Jean Yves; Rambaud, Philippe; Pitault, Bernard; Paltrier, Sylvain

    1997-05-01

    The performance of a new CdTe based x-ray detector devoted to digital radiography are presented. The detectors consist of a 6 cm2 CdTe 2D-array connected to CMOS readout circuit by indium bumps. The final image has 400 X 600 pixels with a 50 micron pitch. This solid-state detector presents the advantages of direct conversion, i.e. high stopping power with high spatial resolution and a significantly higher signal than commercially available scintillator/photodetector systems. The experimental results show excellent linearity, spatial resolution and detective quantum efficiency. The MTF was measured by the angled-slit method: 20 to 30 percent at 10 1p/mm depending on the incident x-ray energy. The measured DQE is about 0.8 at 40 KeV and 100 (mu) Gray dose. Our simulation shows that these experimental results do not reach the theoretical limit. Further improvements are in progress. The first industrial application will be dental radiography due to the small size and the excellent performances. We also tested the detector with x-rays form 20 KeV to 1.25 MeV. Of course the CdTe thickness should then be adapted to the incident x-ray energy.

  13. Semiconductor detectors for soft γ-ray astrophysics

    Science.gov (United States)

    Lebrun, François

    2006-07-01

    The study of γ-ray bursts, compact objects, nucleosynthesis and supernova remnants triggers the most interest today in the soft γ-ray domain. These topics have various experimental requirements with emphasis either on imaging or on spectroscopy. Recent progress has shown the great potential of semiconductor detectors for both applications at the expense of classical scintillators such as NaI or CsI. They also gave insight into their long-term in-orbit behaviour. Room temperature semiconductor detectors, particularly CdTe and CdZnTe, are confirmed as the best choice for imaging applications. As illustrated by the INTEGRAL/ISGRI camera, the CdTe stability is better than expected; its internal background is comparable to that of scintillators, and the spectroscopic degradation in space is slow with a lifetime of about 40 years on an eccentric orbit. Cooled germanium detectors offer the best energy resolution but degrade more rapidly under the cosmic-ray irradiation. However, the INTEGRAL/SPI spectrometer has demonstrated that periodic in-orbit annealings, allowing for a full recovery of the energy resolution, can maintain the spectroscopic performance over several years. Most future projects, focussing on coded mask or Compton telescopes, will take advantage of the semiconductor technology, particularly that related to the ambient temperature detectors.

  14. A survey on air bubble detector placement in the CPB circuit: a 2011 cross-sectional analysis of the practice of Certified Clinical Perfusionists.

    Science.gov (United States)

    Kelting, T; Searles, B; Darling, E

    2012-07-01

    The ideal location of air bubble detector (ABD) placement on the cardiopulmonary bypass (CPB) circuit is debatable. There is, however, very little data characterizing the prevalence of specific ABD placement preferences by perfusionists. Therefore, the purpose of this study was to survey the perfusion community to collect data describing the primary locations of air bubble detector placement on the CPB circuit. In June 2011, an 18-question on-line survey was conducted. Completed surveys were received from 627 participants. Of these, analysis of the responses from the 559 certified clinical perfusionists (CCP) was performed. The routine use of ABD during CPB was reported by 96.8% of CCPs. Of this group, specific placement of the bubble detector is as follows: distal to the venous reservoir outlet (35.6%), between the arterial pump and oxygenator (3.8%), between the oxygenator and arterial line filter (35.1%), distal to the arterial line filter (ALF) (23.6%), and other (1.8%). Those placing the ABD distal to the venous reservoir predominately argued that an emptied venous reservoir was the most likely place to introduce air into the circuit. Those who placed the ABD between the oxygenator and the arterial line filter commonly reasoned that this placement protects against air exiting the membrane. Those placing the ABD distal to the ALF (23.6%) cited that this location protects from all possible entry points of air. A recent false alarm event from an ABD during a case was reported by 36.1% of CCPs. This study demonstrates that the majority of CCPs use an ABD during the conduct of CPB. The placement of the ABD on the circuit, however, is highly variable across the perfusion community. A strong rationale for the various ABD placements suggests that the adoption of multiple ABD may offer the greatest comprehensive protection against air emboli.

  15. Imaging performance of the hybrid pixel detectors XPAD3-S.

    Science.gov (United States)

    Brunner, F Cassol; Clemens, J C; Hemmer, C; Morel, C

    2009-03-21

    Hybrid pixel detectors, originally developed for tracking particles in high-energy physics experiments, have recently been used in material sciences and macromolecular crystallography. Their capability to count single photons and to apply a threshold on the photon energy suggests that they could be optimal digital x-ray detectors in low energy beams such as for small animal computed tomography (CT). To investigate this issue, we have studied the imaging performance of photon counting hybrid pixel detectors based on the XPAD3-S chip. Two detectors are considered, connected either to a Si or to a CdTe sensor, the latter being of interest for its higher efficiency. Both a standard 'International Electrotechnical Commission' (IEC) mammography beam and a beam used for mouse CT results published in the literature are employed. The detector stability, linearity and noise are investigated as a function of the dose for several imaging exposures ( approximately 0.1-400 microGy). The perfect linearity of both detectors is confirmed, but an increase in internal noise for counting statistics higher than approximately 5000 photons has been found, corresponding to exposures above approximately 110 microGy and approximately 50 microGy for the Si and CdTe sensors, respectively. The noise power spectrum (NPS), the modulation transfer function (MTF) and the detective quantum efficiency (DQE) are then measured for two energy threshold configurations (5 keV and 18 keV) and three doses ( approximately 3, 30 and 300 microGy), in order to obtain a complete estimation of the detector performances. In general, the CdTe sensor shows a clear superiority with a maximal DQE(0) of approximately 1, thanks to its high efficiency ( approximately 100%). The DQE of the Si sensor is more dependent on the radiation quality, due to the energy dependence of its efficiency its maximum is approximately 0.4 with respect to the softer radiation. Finally, we compare the XPAD3-S DQE with published curves of

  16. Degradation and capacitance: voltage hysteresis in CdTe devices

    Science.gov (United States)

    Albin, D. S.; Dhere, R. G.; Glynn, S. C.; del Cueto, J. A.; Metzger, W. K.

    2009-08-01

    CdS/CdTe photovoltaic solar cells were made on two different transparent conducting oxide (TCO) structures in order to identify differences in fabrication, performance, and reliability. In one set of cells, chemical vapor deposition (CVD) was used to deposit a bi-layer TCO on Corning 7059 borosilicate glass consisting of a F-doped, conductive tin-oxide (cSnO2) layer capped by an insulating (undoped), buffer (iSnO2) layer. In the other set, a more advanced bi-layer structure consisting of sputtered cadmium stannate (Cd2SnO4; CTO) as the conducting layer and zinc stannate (Zn2SnO4; ZTO) as the buffer layer was used. CTO/ZTO substrates yielded higher performance devices however performance uniformity was worse due to possible strain effects associated with TCO layer fabrication. Cells using the SnO2-based structure were only slightly lower in performance, but exhibited considerably greater performance uniformity. When subjected to accelerated lifetime testing (ALT) at 85 - 100 °C under 1-sun illumination and open-circuit bias, more degradation was observed in CdTe cells deposited on the CTO/ZTO substrates. Considerable C-V hysteresis, defined as the depletion width difference between reverse and forward direction scans, was observed in all Cu-doped CdTe cells. These same effects can also be observed in thin-film modules. Hysteresis was observed to increase with increasing stress and degradation. The mechanism for hysteresis is discussed in terms of both an ionic-drift model and one involving majority carrier emission in the space-charge region (SCR). The increased generation of hysteresis observed in CdTe cells deposited on CTO/ZTO substrates suggests potential decomposition of these latter oxides when subjected to stress testing.

  17. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  18. The strange diffusivity of Ag atoms in CdTe

    CERN Document Server

    Wolf, H; Ostheimer, V; Schachtrup, A R; Stolwijk, N A; Wichert, T

    2001-01-01

    The diffusion of Ag atoms in CdTe was investigated using the radiotracer $^{111}\\!$Ag, which was introduced by implantation with an energy of 60 or 80 keV. The measured diffusion profiles are explained by assuming the existence of a repulsive interaction between Ag and residual Cu atoms causing a drift of the Ag atoms towards the centre of the crystal, which supposes the diffusion in a concentration gradient. This effect vanishes if the Ag concentration is increased and becomes more pronounced if the crystals are simultaneously co- doped with Cu. (11 refs).

  19. Raman characterization of a new Te-rich binary compound: CdTe2.

    Science.gov (United States)

    Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

    2009-04-02

    Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te.

  20. Effects of Various RF Powers on CdTe Thin Film Growth Using RF Magnetron Sputtering

    Science.gov (United States)

    Alibakhshi, Mohammad; Ghorannevis, Zohreh

    2016-09-01

    Cadmium telluride (CdTe) film was deposited using the magnetron sputtering system onto a glass substrate at various deposition times and radio frequency (RF) powers. Ar gas was used to generate plasma to sputter the CdTe atoms from CdTe target. Effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD) analysis showed that the films exhibited polycrystalline nature of CdTe structure with the (111) orientation as the most prominent peak. Optimum condition to grow the CdTe film was obtained and it was found that increasing the deposition time and RF power increases the crystallinity of the films. From the profilometer and XRD data's, the thicknesses and crystal sizes of the CdTe films increased at the higher RF power and the longer deposition time, which results in affecting the band gap as well. From atomic force microscopy (AFM) analysis we found that roughnesses of the films depend on the deposition time and is independent of the RF power.

  1. Pixel Detectors

    OpenAIRE

    Wermes, Norbert

    2005-01-01

    Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel technology which can be considered the state of the art in this field of instrumentation. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as the very harsh...

  2. Direct charge sharing observation in single-photon-counting pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Pellegrini, G. [Centro Nacional de Microelectronica, IMB-CNM (CSIC), Barcelona 08193 (Spain)]. E-mail: Giulio.Pellegrini@cnm.es; Maiorino, M. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Bellaterra (Spain); Blanchot, G. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Bellaterra (Spain); Chmeissani, M. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Bellaterra (Spain); Garcia, J. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Bellaterra (Spain); Lozano, M. [Centro Nacional de Microelectronica, IMB-CNM (CSIC), Barcelona 08193 (Spain); Martinez, R. [Centro Nacional de Microelectronica, IMB-CNM (CSIC), Barcelona 08193 (Spain); Puigdengoles, C. [IFAE - Institut de Fisica d' Altes Energies, UAB Campus, 08193 Bellaterra (Spain); Ullan, M. [Centro Nacional de Microelectronica, IMB-CNM (CSIC), Barcelona 08193 (Spain)

    2007-04-01

    In photon-counting imaging devices, charge sharing can limit the detector spatial resolution and contrast, as multiple counts can be induced in adjacent pixels as a result of the spread of the charge cloud generated from a single X-ray photon of high energy in the detector bulk. Although debated for a long time, the full impact of charge sharing has not been completely assessed. In this work, the importance of charge sharing in pixellated CdTe and silicon detectors is studied by exposing imaging devices to different low activity sources. These devices are made of Si and CdTe pixel detector bump-bonded to Medipix2 single-photon-counting chips with a 55 {mu}m pixel pitch. We will show how charge sharing affects the spatial detector resolution depending on incident particle type (alpha, beta and gamma), detector bias voltage and read-out chip threshold. This study will give an insight on the impact on the design and operation of pixel detectors coupled to photon-counting devices for imaging applications.

  3. Direct charge sharing observation in single-photon-counting pixel detector

    Science.gov (United States)

    Pellegrini, G.; Maiorino, M.; Blanchot, G.; Chmeissani, M.; Garcia, J.; Lozano, M.; Martinez, R.; Puigdengoles, C.; Ullan, M.

    2007-04-01

    In photon-counting imaging devices, charge sharing can limit the detector spatial resolution and contrast, as multiple counts can be induced in adjacent pixels as a result of the spread of the charge cloud generated from a single X-ray photon of high energy in the detector bulk. Although debated for a long time, the full impact of charge sharing has not been completely assessed. In this work, the importance of charge sharing in pixellated CdTe and silicon detectors is studied by exposing imaging devices to different low activity sources. These devices are made of Si and CdTe pixel detector bump-bonded to Medipix2 single-photon-counting chips with a 55 μm pixel pitch. We will show how charge sharing affects the spatial detector resolution depending on incident particle type (alpha, beta and gamma), detector bias voltage and read-out chip threshold. This study will give an insight on the impact on the design and operation of pixel detectors coupled to photon-counting devices for imaging applications.

  4. Denoising and artefact reduction in dynamic flat detector CT perfusion imaging using high speed acquisition: first experimental and clinical results.

    Science.gov (United States)

    Manhart, Michael T; Aichert, André; Struffert, Tobias; Deuerling-Zheng, Yu; Kowarschik, Markus; Maier, Andreas K; Hornegger, Joachim; Doerfler, Arnd

    2014-08-21

    Flat detector CT perfusion (FD-CTP) is a novel technique using C-arm angiography systems for interventional dynamic tissue perfusion measurement with high potential benefits for catheter-guided treatment of stroke. However, FD-CTP is challenging since C-arms rotate slower than conventional CT systems. Furthermore, noise and artefacts affect the measurement of contrast agent flow in tissue. Recent robotic C-arms are able to use high speed protocols (HSP), which allow sampling of the contrast agent flow with improved temporal resolution. However, low angular sampling of projection images leads to streak artefacts, which are translated to the perfusion maps. We recently introduced the FDK-JBF denoising technique based on Feldkamp (FDK) reconstruction followed by joint bilateral filtering (JBF). As this edge-preserving noise reduction preserves streak artefacts, an empirical streak reduction (SR) technique is presented in this work. The SR method exploits spatial and temporal information in the form of total variation and time-curve analysis to detect and remove streaks. The novel approach is evaluated in a numerical brain phantom and a patient study. An improved noise and artefact reduction compared to existing post-processing methods and faster computation speed compared to an algebraic reconstruction method are achieved.

  5. Denoising and artefact reduction in dynamic flat detector CT perfusion imaging using high speed acquisition: first experimental and clinical results

    Science.gov (United States)

    Manhart, Michael T.; Aichert, André; Struffert, Tobias; Deuerling-Zheng, Yu; Kowarschik, Markus; Maier, Andreas K.; Hornegger, Joachim; Doerfler, Arnd

    2014-08-01

    Flat detector CT perfusion (FD-CTP) is a novel technique using C-arm angiography systems for interventional dynamic tissue perfusion measurement with high potential benefits for catheter-guided treatment of stroke. However, FD-CTP is challenging since C-arms rotate slower than conventional CT systems. Furthermore, noise and artefacts affect the measurement of contrast agent flow in tissue. Recent robotic C-arms are able to use high speed protocols (HSP), which allow sampling of the contrast agent flow with improved temporal resolution. However, low angular sampling of projection images leads to streak artefacts, which are translated to the perfusion maps. We recently introduced the FDK-JBF denoising technique based on Feldkamp (FDK) reconstruction followed by joint bilateral filtering (JBF). As this edge-preserving noise reduction preserves streak artefacts, an empirical streak reduction (SR) technique is presented in this work. The SR method exploits spatial and temporal information in the form of total variation and time-curve analysis to detect and remove streaks. The novel approach is evaluated in a numerical brain phantom and a patient study. An improved noise and artefact reduction compared to existing post-processing methods and faster computation speed compared to an algebraic reconstruction method are achieved.

  6. Highly luminescent hybrid SiO2-coated CdTe quantum dots: synthesis and properties.

    Science.gov (United States)

    Liu, Ning; Yang, Ping

    2013-01-01

    Novel hybrid SiO2-coated CdTe quantum dots (QDs) were created using CdTe QDs coated with a hybrid SiO2 shell containing Cd(2+) ions and a sulfur source via a sol-gel process in aqueous solution. Aqueous CdTe QDs with tunable emitting color created through a reaction between cadmium chloride and sodium hydrogen telluride was used as cores for the preparation of hybrid SiO2-coated CdTe QDs. In our experiments we found that the surface state of the cores and preparation conditions that affect the formation of the hybrid SiO2 shell also greatly affect photoluminescence of the hybrid SiO2-coated CdTe QDs. The generation of CdS-like clusters in the vicinity of the CdTe QDs, caused the quantum size effect of the QDs to be greatly reduced, which changes photoluminescence properties of the hybrid QDs fundamentally. Namely, the novel hybrid SiO2 shell played an important role in generating a series of specific optical properties. In addition, the novel hybrid SiO2 shell can be created if no CdTe QD is added. In order to gain an insight into the inter structure of the hybrid shell, we characterized the hybrid SiO2-coated CdTe QDs using X-ray diffraction analysis and discuss the formation mechanism of such a hybrid structure. This work is significant because the novel hybrid SiO2-coated CdTe QDs with its excellent properties can be used in many applications, such as biolabeling and optoelectronic devices.

  7. Close space sublimation of CdTe for solar cells and the effect of underlying layers

    OpenAIRE

    Wakeling, B. R.

    2010-01-01

    This work has focused on the design, construction and testing of a close space sublimation system for CdTe deposition. In addition, it also focused on variations to the treatment and fabrication procedures of the transparent conducting oxide and CdS layers prior to the CdTe deposition, in order to influence the structure and electrical properties of the CdTe/CdS interface. CdTe was deposited by the physical vapour process, close space sublimation. The equipment used was custom built for this ...

  8. Preparation of CdTe nanocrystal-polymer composite microspheres in aqueous solution by dispersing method

    Institute of Scientific and Technical Information of China (English)

    LI Minjie; WANG Chunlei; HAN Kun; YANG Bai

    2005-01-01

    Highly fluorescent CdTe nanocrystals were synthesized in aqueous solution, and then processible CdTe nanocrystal-polymer composites were fabricated by coating the aqueous nanocrystals with copolymers of styrene and octadecyl-p-vinyl-benzyldimethylammonium chloride (SOV- DAC) directly. A dichloromethane solution of CdTe nano- crystal-polymer composites was dispersed in the aqueous solution of poly (vinyl alcohol) (PVA) generating highly fluorescent microspheres. Experimental parameters such as the concentration of nanocrystal-polymer composites, the concentration of PVA, and stirring speed which had important effect on the preparation of the microspheres were investigated in detail with fluorescent microscope characterization.

  9. Narrowing the size distribution of CdTe nanocrystals using digestive ripening

    Indian Academy of Sciences (India)

    Mona Mittal; Sameer Sapra

    2015-06-01

    Digestive ripening of polydispersed colloidal CdTe nanocrystals is performed which results in monodispersed nanocrystals (NCs) as studied by optical spectroscopy. Optimization of ligand and refluxing time is carried out. Monodispersed NCs are obtained using mercaptopropionic acid (MPA) as a digestive ripening agent at a refluxing time of 1–2 h. Digestive ripening of CdTe NCs, which are less polydispersed, is also executed and it leads to more monodispersed NCs. In all the cases, there is a shift of maximum emission wavelength of CdTe NCs after digestive ripening that may be due to Ostwald ripening along with digestive ripening.

  10. Metalorganic Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned (211)Si

    Science.gov (United States)

    2012-05-15

    respectively. X-ray analysis of thin CdTe films grown on these substrates gave wider full-width half-maximum (FWHM) values when compared to the layers grown...obtained in the temperature range of 575-675 °C and 505-520 °C respectively. X-ray analy- sis of thin CdTe films grown on these substrates gave wider...An effort was also made to grow thin uniformly merged ~0.6 µm (211)B CdTe film on nanopatterned (211)Si by

  11. Time-resolved photoluminescence of polycrystalline CdTe grown by close-spaced sublimation

    Science.gov (United States)

    Keyes, B.; Dhere, R.; Ramanathan, K.

    1994-06-01

    Polycrystalline CdTe has shown great promise as a low-cost material for thin-film, terrestrial photovoltaic applications, with efficiencies approaching 16% achieved with close-spaced sublimation (CSS)-grown CdTe. Due to the inherent complexities of polycrystalline material, much of the progress in this area has occurred through a slow trial-and-error process. This report uses time-resolved photoluminescence (TRPL) to characterize the CdTe material quality as a function of one basic growth parameter—substrate temperature. This characterization is done for two different glass substrate materials, soda-lime silicate and borosilicate.

  12. Growth and characterization of CdTe on GaAs/Si substrates

    Science.gov (United States)

    Radhakrishnan, G.; Nouhi, A.; Liu, J.

    1988-01-01

    Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown in Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence, and scanning electron microscopy have been used to characterize the CdTe films.

  13. Electrodeposition, characterization and photo electrochemical properties of CdSe and CdTe

    OpenAIRE

    Atef Y. Shenouda; El Sayed, El Sayed M.

    2015-01-01

    CdSe and CdTe are electrodeposited using 0.1 M Cd2+ and different ion concentrations of Se and Te. The effect of the temperature on the electrodeposition process is also studied. The crystal structure of the deposited CdSe and CdTe is investigated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) of samples deposited at optimized parameters reveals that CdSe has spongy spherical grains while CdTe has coralloid morphology. Optical absorption shows the presence of direct transition...

  14. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    Energy Technology Data Exchange (ETDEWEB)

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  15. Emitter Choice for Epitaxial CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-11-21

    High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

  16. Preparation and properties of evaporated CdTe films

    Science.gov (United States)

    Bube, R. H.; Fahrenbruch, A. L.; Chien, K. F.

    1987-07-01

    Previous work on evaporated CdTe films for photovoltaics showed no clear path to successful p-type doping of CdTe during deposition. Post-deposition annealing of the films in various ambients thus was examined as a means of doping. Anneals were done in Te, Cd, P, and As vapors and in vacuum, air and Ar, all of which showed large effects on series resistance and diode parameters. With As, series resistance values of In/p-CdTe/graphite structures decreased markedly. This decrease was due to a decrease in grain boundary and/or back contact barrier height, and thus was due to large increases in mobility; the carrier density was not altered substantially. Although the series-resistance decreases were substantial, the diode characteristics became worse. The decreases were not observed when CdS/CdTe cells were fabricated on Te vapor-annealed films. Preparation of ZnO films by reactive evaporation yielded promising results. Deposition of p-ZnTe films by hot-wall vapor evaporation, using conventional techniques, yielded acceptable specimens.

  17. ISGRI: a CdTe array imager for INTEGRAL

    Science.gov (United States)

    Lebrun, Francois; Blondel, Claire; Fondeur, Irene; Goldwurm, Andrea; Laurent, Phillipe; Leray, Jean P.

    1996-10-01

    The INTEGRAL soft gamma-ray imager (ISGRI) is a large and thin CdTe array. Operating at room temperature, this gamma camera covers the lower part (below 200 keV) of the energy domain (20 keV - 10 MeV) of the imager on board the INTEGRAL Satellite (IBIS). The ASIC's front-end electronics features particularly a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The charge loss correction and its performances are presented as well as the results of various studies on CdTe thermal behavior and radiation hardness. At higher energy (above 200 keV) ISGRI will operate in conjunction with PICsIT, the IBIS CsI gamma camera. A selection among the events in coincidence performed on the basis of the Compton scattering properties reduces strongly the background. This allows an improvement of the sensitivity and permits short term imaging and spectral studies (high energy pulsars) which otherwise would not have fit within the IBIS telemetry allocation.

  18. High diagnostic accuracy of low-dose gated-SPECT with solid-state ultrafast detectors: preliminary clinical results

    Energy Technology Data Exchange (ETDEWEB)

    Gimelli, Alessia; Genovesi, Dario; Giorgetti, Assuero; Marzullo, Paolo [CNR, Fondazione Toscana Gabriele Monasterio, Pisa (Italy); Bottai, Matteo [University of South Carolina, Division of Biostatistics, Columbia, SC (United States); Karolinska Institutet, Division of Biostatistics, Stockholm (Sweden); Di Martino, Fabio [AOUP, UO Fisica Sanitaria, Pisa (Italy)

    2012-01-15

    Appropriate use of SPECT imaging is regulated by evidence-based guidelines and appropriateness criteria in an effort to limit the burden of radiation administered to patients. We aimed at establishing whether the use of a low dose for stress-rest single-day nuclear myocardial perfusion imaging on an ultrafast (UF) cardiac gamma camera using cadmium-zinc-telluride solid-state detectors could be used routinely with the same accuracy obtained with standard doses and conventional cameras. To this purpose, 137 consecutive patients (mean age 61 {+-} 8 years) with known or suspected coronary artery disease (CAD) were enrolled. They underwent single-day low-dose stress-rest myocardial perfusion imaging using UF SPECT and invasive coronary angiography. Patients underwent the first scan with a 7-min acquisition time 10 min after the end of the stress protocol (dose range 185 to 222 MBq of {sup 99m}Tc-tetrofosmin). The rest scan (dose range 370 to 444 MBq of {sup 99m}Tc-tetrofosmin) was acquired with a 6-min acquisition time. The mean summed stress scores (SSS) and mean summed rest scores (SRS) were obtained semiquantitatively. Coronary angiograms showed significant epicardial CAD in 83% of patients. Mean SSS and SRS were 10 {+-} 5 and 3 {+-} 3, respectively. Overall the area under the ROC curve for the SSS values was 0.904, while the areas under the ROC curves for each vascular territory were 0.982 for the left anterior descending artery, 0.931 for the left circumflex artery and 0.889 for the right coronary artery. This pilot study demonstrated the feasibility of a low-dose single-day stress-rest fasting protocol performed using UF SPECT, with good sensitivity and specificity in detecting CAD at low patient exposure, opening new perspectives in the use of myocardial perfusion in ischaemic patients. (orig.)

  19. Optical Detectors

    Science.gov (United States)

    Tabbert, Bernd; Goushcha, Alexander

    Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  20. Metal Detectors.

    Science.gov (United States)

    Harrington-Lueker, Donna

    1992-01-01

    Schools that count on metal detectors to stem the flow of weapons into the schools create a false sense of security. Recommendations include investing in personnel rather than hardware, cultivating the confidence of law-abiding students, and enforcing discipline. Metal detectors can be quite effective at afterschool events. (MLF)

  1. Facile preparation of highly luminescent CdTe quantum dots within hyperbranched poly(amidoamine)s and their application in bio-imaging.

    Science.gov (United States)

    Shi, Yunfeng; Liu, Lin; Pang, Huan; Zhou, Hongli; Zhang, Guanqing; Ou, Yangyan; Zhang, Xiaoyin; Du, Jimin; Xiao, Wangchuan

    2014-03-13

    A new strategy for facile preparation of highly luminescent CdTe quantum dots (QDs) within amine-terminated hyperbranched poly(amidoamine)s (HPAMAM) was proposed in this paper. CdTe precursors were first prepared by adding NaHTe to aqueous Cd2+ chelated by 3-mercaptopropionic sodium (MPA-Na), and then HPAMAM was introduced to stabilize the CdTe precursors. After microwave irradiation, highly fluorescent and stable CdTe QDs stabilized by MPA-Na and HPAMAM were obtained. The CdTe QDs showed a high quantum yield (QY) up to 58%. By preparing CdTe QDs within HPAMAM, the biocompatibility properties of HPAMAM and the optical, electrical properties of CdTe QDs can be combined, endowing the CdTe QDs with biocompatibility. The resulting CdTe QDs can be directly used in biomedical fields, and their potential application in bio-imaging was investigated.

  2. The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

    CERN Document Server

    Watanabe, Shin; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin'ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Astushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

    2015-01-01

    The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and ...

  3. Evaluation of clinical use of OneDose™ metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia

    Directory of Open Access Journals (Sweden)

    Huda Ibrahim Al-Mohammed

    2011-01-01

    Full Text Available Background: Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to their bone marrow transplant. It involves the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore, it is important to measure and monitor the skin dose during the treatment. Thermoluminescent dosimeters (TLDs and the OneDose™ metal oxide semiconductor field effect transistor (MOSFET detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose. Aims: The primary goal of this study was to measure the variation of skin dose using OneDose MOSFET detectors and TLD detectors, and compare the results with the target prescribed dose. The secondary aim was to evaluate the simplicity of use and determine if one system was superior to the other in clinical use. Material and Methods : The measurements involved twelve adult patients diagnosed with acute lymphoblastic leukemia. TLD and OneDose MOSFET dosimetry were performed at ten different anatomical sites of each patient. Results : The results showed that there was a variation between skin dose measured with OneDose MOSFET detectors and TLD in all patients. However, the variation was not significant. Furthermore, the results showed for every anatomical site there was no significant different between the prescribed dose and the dose measured by either TLD or OneDose MOSFET detectors. Conclusion: There were no significant differences between the OneDose MOSFET and TLDs in comparison to the target prescribed dose. However, OneDose MOSFET detectors give a direct read-out immediately after the treatment, and their simplicity of use to compare with TLD detectors may make them preferred for clinical use.

  4. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    Institute of Scientific and Technical Information of China (English)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  5. Enhanced Specificity of Multiplex Polymerase Chain Reaction via CdTe Quantum Dots

    Science.gov (United States)

    Liang, Gaofeng; Ma, Chao; Zhu, Yanliang; Li, Shuchun; Shao, Youhua; Wang, Yong; Xiao, Zhongdang

    2011-12-01

    Nanoparticles were recently reported to be able to improve both efficiency and specificity in polymerase chain reaction (PCR). Here, CdTe QDs were introduced into multi-PCR systems. It was found that an appropriate concentration of CdTe QDs could enhance the performance of multi-PCR by reducing the formation of nonspecific products in the complex system, but an excessive amount of CdTe QDs could suppress the PCR. The effects of QDs on PCR can be reversed by increasing the polymerase concentration or by adding bovine serum albumin (BSA). The mechanisms underlying these effects were also discussed. The results indicated that CdTe QDs could be used to optimize the amplification products of the PCR, especially in the multi-PCR system with different primers annealing temperatures, which is of great significance for molecular diagnosis.

  6. Synthesis of CdTe Quantum Dots with Tunable Photoluminescence Using Tellurium Dioxide as Tellurium Source

    Institute of Scientific and Technical Information of China (English)

    刘声燕; 王益林; 杨昆; 周立亚

    2012-01-01

    A simple and convenient method has been developed for synthesis of water-soluble CdTe quantum dots (QDs) under ambient atmospheric conditions. In contrast to the traditional aqueous synthesis, green to red emitting CdTe QDs were prepared by using TeO2 to replace Te or AIzTe3 as tellurium source in this method. The influences of ex- perimental variables, including pH value, 3-mercaptopropionic acid (MPA)/Cd and Te/Cd molar ratios, on the emis- sion peak and photoluminescence (PL) quantum yield (QY) of the obtained CdTe QDs have been systematically investigated. Experimental results indicate that green to red emitting CdTe QDs with a maximum photolumines- cence quantum yield of 35.4% can be prepared at pH 11.3 and rt(Cd) : n(Te) : n(MPA)= 1 : 0.1 : 1.7.

  7. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  8. Effects of high-temperature annealing on ultra-thin CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xia Wei; Lin Hao; Wu, Hsiang N.; Tang, Ching W., E-mail: chtang@che.rochester.edu

    2011-10-31

    High-temperature annealing (HTA), a process step prior to vapor cadmium chloride (VCC) treatment, has been found to be useful for improving the crystallinity of CdTe films and the efficiency of ultra-thin CdTe solar cells. Scanning electron microscopy, optical absorption, photoluminescence measurements and analyses on photoluminescence results using spectral deconvolution reveal that the additional HTA step produces substantial grain growth and reduces grain boundary defects. It also reduces excessive sulfur diffusion across the junction that can occur during the VCC treatment. The HTA step helps to produce pinhole-free CdTe films and reduce electrical shorts in ultra-thin CdTe solar cells. An efficiency of about 11.6% has been demonstrated for ultra-thin CdS/CdTe solar cells processed with HTA step.

  9. Spatial luminescence imaging of dopant incorporation in CdTe Films

    Science.gov (United States)

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt K.; Al-Jassim, Mowafak

    2017-01-01

    State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. The image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

  10. Spatial luminescence imaging of dopant incorporation in CdTe Films

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt K.; Al-Jassim, Mowafak

    2017-01-28

    State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. The image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

  11. Interface reactions in CdTe solar cell processing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; Dhere, R.; Swartzlander-Guest, A. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1998-12-31

    Currently, the best performing CdS/CdTe solar cells use a superstrate structure in which CdTe is deposited on a heated CdS/SnO{sub 2}/Glass substrate. In the close-spaced-sublimation (CSS) process, substrate temperatures in the range 550 C to 620 C are common. Understanding how these high processing temperatures impact reactions at the CdS/CdTe interface in addition to reactions between previously deposited layers is critical. At the SnO{sub 2}/CdS interface the authors have determined that SnO{sub 2} can be susceptible to reduction, particularly in H{sub 2} ambients. Room-temperature sputtered SnO{sub 2} shows the most susceptibility. In contrast, higher growth temperature chemical vapor deposited (CVD) SnO{sub 2} appears to be much more stable. Elimination of unstable SnO{sub 2} layers, and the substitution of thermal treatments for H{sub 2} anneals has produced total-area solar conversion efficiencies of 13.6% using non-optimized SnO{sub 2} substrates and chemical-bath deposited (CBD) CdS. Alloying and interdiffusion at the CdS/CdTe interface was studied using a new lift-off approach which allows enhanced compositional and structural analysis at the interface. Small-grained CdS, grown by a low-temperature CBD process, results in more CdTe{sub 1{minus}x}S{sub x} alloying (x = 12--13%) relative to larger-grained CdS grown by high-temperature CSS (x{approximately}2--3%). Interdiffusion of S and Te at the interface, measured with lift-off samples, appears to be inversely proportional to the amount of oxygen used during the CSS CdTe deposition. The highest efficiency to date using CSS-grown CdS is 10.7% and was accomplished by eliminating oxygen during the CdTe deposition.

  12. Deposition of Cl-doped CdTe polycrystalline films by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Takahashi, Kohei; Akiba, Sho; Yasuda, Nao [Department of Electrical and Electronic Engineering, National Institute of Technology, Kisarazu College, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Ichioka, Akina; Doki, Takahiro; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2015-06-15

    The effects of Cl-doping on the CdTe layers by the close-spaced sublimation (CSS) deposition were investigated. Cl-doped CdTe polycrystalline films were deposited on graphite substrates by CSS method using a mixture of CdTe and CdCl{sub 2} powder as a source. In X-ray diffraction (XRD) patterns of the obtained films with various deposition times, many diffraction peaks other than CdTe peaks were observed in the deposition times lower than 10 min. These diffraction peaks were probably due to the formation of chlorides of Cd, Te and C, such as CdCl{sub 2}, TeCl{sub 4}, Te{sub 3}Cl{sub 2} and C{sub 10}Cl{sub 8}. X-ray fluorescence (XRF) and secondary ion mass spectrometry (SIMS) analyses revealed that a large amount of chlorine was contained in the films with the deposition times lower than 10 min, and that Cl concentration decreased with increasing the deposition time above 3 min. These results indicate that the films containing the chlorides of Cd, Te and C in addition to CdTe are formed in the initial stage of the CSS deposition using a mixture of CdTe and CdCl{sub 2} powder as a source. Cross-sectional images revealed that the grain size was decreased by the effect of Cl-doping. Furthermore, current-voltage (I -V) characteristics of the CdTe/graphite structures were measured, and it was found that the resistivity of the Cl-doped CdTe layer was much higher than that of the undoped CdTe layer. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Characterization of Cr(V)-induced genotoxicity using CdTe nanocrystals as fluorescent probes.

    Science.gov (United States)

    Zhang, Wen-Hao; Sui, Chao-Xia; Wang, Xie; Yin, Gong-Ju; Liu, Ying-Fan; Zhang, Ding

    2014-12-21

    CdTe nanocrystals capped by cysteamine were synthesized to study Cr(V)-induced genotoxicity. On the surface of TiO2 thin films, the stepwise process of DNA breakage induced by Cr(V)-GSH complexes was vividly observed by using CdTe-DNA self-assembled fluorescent probes; in acetate buffer solution, an analytical method was developed to detect Cr(V)-induced genotoxicity with CdTe fluorescent probes.

  14. Degradation processes occur on the CdTe thin films solar elements

    CERN Document Server

    Mirsagatov, S A; Makhmudov, M; Muzapharova, S A

    1999-01-01

    It is shown the Cu in CdTe polycristalline films is diffusing on the complex mechanism. By bringing of W atoms in thin CdTe layers it is possible to operate diffusion's speed of Cu atoms. Initiation of the (Cu sup + W sub C sub d sup -) complexes under the conditions N(W sub C sub d sup -)>=N(Cu sub i sup +) hardly reduce the diffusion velocity of Cu atoms.

  15. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    OpenAIRE

    Aliyu, M. M.; Islam, M.A.; Hamzah, N. R.; Karim, M. R.; M.A. Matin; Sopian, K.; Amin, N

    2012-01-01

    This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears...

  16. Transferring CdTe Nanoparticles from Liquid Phase to Polyvinylpyrrolidone Nanofibers by Electrospinning and Detecting Its Photoluminescence Property

    Institute of Scientific and Technical Information of China (English)

    WANG Shu-gang; YANG Qing-biao; BAI Jie; SONG Yan; ZHANG Chao-qun; LI Yao-xian

    2008-01-01

    The major aim of this work was to synthesize thio-stabilized CdTe nanoparticles(NPs) in an aqueous solution,which was then enwrapped with cetyltrimethylammonium bromide(CTAB),and finally transferred to the polyvinylpyrrolidone(PVP) matrix by electrospinning,The PVP nanofibers containing CdTe NPs were characterized by scanning electron microscopy(SEM) and transmission electron microscopy(TEM),to observe the morphology of the nanofibers and the distribution of CdTe NPs,The selective area electronic diffraction(SAED) pattern verified that CdTe NPs were cubic lattice,The photoluminescence(PL) spectrum indicated that CdTe NPs existed in an optical style in PVP nanofibers,Moreover,X-ray photoelectron spectra(XPS) revealed that thiol-stabilized CdTe NPs were enwrapped by CTAB,and PVP acted as a dispersant in the process of electrospinning.

  17. Quantification of Acoustic Cavitation Produced by a Clinical Extracorporeal Shock Wave Therapy System Using a Passive Cylindrical Detector

    Science.gov (United States)

    Choi, M. J.; Cho, S. C.; Kang, G. S.; Paeng, D. G.; Lee, K. I.; Hodnett, M.; Zeqiri, B.; Coleman, A. J.

    Acoustic cavitation is regarded to play an important role in extracorporeal shock wave therapy (ESWT). However it is not yet well characterized the cavitation in ESWT due to difficulty in its measurement. This study tests NPL cavitation sensor to discuss its potential to quantify cavitation activities produced by a clinical shock wave field. In the present experiment, the sensor was located at the focus of an electromagentic shock wave generator (HnT Medical System, Korea). Measurements were repeated 15 times as varying setting numbers. It was observed that the acoustic signals recorded by the sensor contain characteristic features of broadband spikes representing cavitation. Spectral band magnitude (SBM), used as a cavitation measure, rose with the setting number. There was a threshold above which SBM soared up and had its uncertainty greately increased. The results prove the potential of the sensor in characterizing the cavitation produced by shock wave fields.

  18. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

    Science.gov (United States)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-01

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  19. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  20. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui; Burst, James M.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt K.

    2016-05-01

    A key challenge in cadmium telluride (CdTe) semiconductors is obtaining stable and high hole density. Group I elements substituting Cd can form ideal acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but copper creates stability problems and hole density that has not exceeded 1015 cm-3. If hole density can be increased beyond 10^16 cm-3, CdTe solar technology can exceed multicrystalline silicon and provide levelized costs of electricity below conventional energy sources. Group V elements substituting Te offer a solution, but are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain boundary (GB) diffusion of phosphorous (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast GB diffusion, there is a fast bulk diffusion component that enables deep P incorporation in CdTe. Detailed first-principles calculations indicate the slow bulk diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, this result opens up new experimental possibilities for Group V doping in CdTe materials.

  1. Studies on interaction between CdTe quantum dots and -chymotrypsin by molecular spectroscopy

    Indian Academy of Sciences (India)

    Jianniao tian; Shengzhi Wei; Yanchun Zhao; Rongjun Liu; Shulin Zhao

    2010-05-01

    In this article, the interaction between -Chymotrypsin and CdTe QDs was investigated by fluorescence, synchronous fluorescence, and circular dichroism (CD) spectroscopic methods at pH 7.20 and pH 9.05. The intrinsic fluorescence of -Chy is quenched by CdTe QDs. Under different pH conditions, the level of binding constants is determined to be 103 from fluorescence data. The hydrogen bond or van der Waals force is involved in the binding process when pH is 9.05, while the hydrophobic and electrostatic interactions play main role in the binding process when pH is 7.20. The red-shift of synchronous fluorescence spectral peak of protein after the addition of CdTe QDs reveals that the microenvironments around tryptophan residues are disturbed by CdTe QDs. The secondary structure of -Chy undergoes slight changes as similar by far-UV CD data. The activity and stability of -Chy in the presence of CdTe QDs were also studied. -Chy can maintain its high activity and stability under different pH conditions for 24 h in the presence of CdTe QDs.

  2. Facile synthesis of straight and branched CdTe nanowires using CdO as precursor.

    Science.gov (United States)

    Liu, Sheng; Yang, Chunyan; Zhang, Wen-Hua; Li, Can

    2011-12-01

    High-quality colloidal CdTe nanowires (NWs) containing both straight and branched ones were controllably prepared via a solution-based approach, using a low melting Bi nanoparticles as catalysts, CdO and tributylphosphine telluride (TBP-Te) as precursors, and a tri-n-octylphosphine oxide/tri-n-octylphosphine (TOPO/TOP) mixture as solvent. The resulting straight CdTe NWs have typical diameters below 20 nm accompanying with lengths exceeding 10 microm. In the case of branched CdTe NWs, tripod, V-shaped and y-shaped morphologies are obtained by decreasing the apparent Cd/Te molar ratio. It is found that, as the surface capping ligands, di-n-octylphosphinic acid (DOPA) is superior to decylphosphonic acid (DPA) in the reproducible growth of high-quality CdTe NWs. Since highly toxic dimethylcadmium, a cadmium precursor widely used in literatures, is replaced by CdO and the amount of the TOPO/TOP solvent mixture is significantly reduced, a relative safe and economical synthetic approach of high-quality colloidal CdTe NWs with controllable morphology is thus presented.

  3. Cu{sub 2}S as ohmic back contact for CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Türck, Johannes; Siol, Sebastian; Mayer, Thomas; Klein, Andreas; Jaegermann, Wolfram, E-mail: jaegermann@surface.tu-darmstadt.de

    2015-05-01

    We prepared a back contact for CdTe solar cells with Cu{sub 2}S as primary contact. Cu{sub 2}S was evaporated on CdCl{sub 2} treated CdTe solar cells in superstrate configuration. The CdTe and CdS layers were deposited by Closed Space Sublimation. Direct interface studies with X-ray photoelectron spectroscopy have revealed a strongly reactive interface between CdTe and Cu{sub 2}S. A valence band offset of 0.4-0.6 eV has been determined. The performance of solar cells with Cu{sub 2}S back contacts was studied in comparison to cells with an Au contact that deposited onto a CdCl{sub 2}-treated CdTe surface that was chemically etched using a nitric-phosphoric etch. The solar cells were analyzed by current-voltage curves and external quantum efficiency measurements. After several post deposition annealing steps, 13% efficiency was reached with the Cu{sub 2}S back contact, which was significantly higher than the ones obtained for the NP-etched back contacts. - Highlights: • A new back contact for CdTe solar out of Cu{sub 2}S has been tested. • With a direct interface experiment the valence band offset was determined. • Post deposition heat treatment has been carried out for the solar cells. • 13% efficiency has been reached with the Cu{sub 2}S back contact.

  4. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  5. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  6. Study of Cu-related Defect States in Single-crystal CdTe

    Science.gov (United States)

    Corwine, Caroline; Sites, James; Gessert, Timothy; Metzger, Wyatt; Dippo, Pat; Duda, Anna

    2003-10-01

    We have studied single-crystal CdTe using low-temperature photoluminescence (PL) in an effort to understand the effects of copper on the deep levels, as well as the effect of a bromine methanol (BrMe) etch on subsequent copper diffusion into CdTe. In present polycrystalline CdS/CdTe solar cell technology, the use of a back contact that contains Cu is necessary to produce high-efficiency cells. However, it is not generally understood why Cu is necessary for these devices to function well. In order to obtain further advances in the efficiencies of these solar cells, it is important to know how the back contact process may affect the defect states in CdTe. PL is one tool used to study defect states. However, before PL can be used effectively for polycrystalline CdTe solar cells, relevant spectral features first must be interpreted for single-crystal CdTe. All PL in this study was taken at 4.5 K. We report on PL peaks at 1.40 and 1.45 eV, which are seen only after Cu is diffused into single-crystal CdTe.

  7. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole.

    Science.gov (United States)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-15

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL(-1) (3.4 ng mL(-1)) and the quantitative determination range was 0-2.8 μg mL(-1) with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  8. [Preparation and characterization of tumor targeted CdTe quantum dots modified with functional polymer].

    Science.gov (United States)

    Zhu, Hong-Yan; Zhu, Jing-Ping; Xie, Ai-Mei; Yuan, Jing; Hua, Ye; Zhang, Wei

    2014-10-01

    N-acetyl-L-cysteine (NAC) capped quantum dots (QDs) were synthesized by a hydrothermal method and coated with 2-amino-2-deoxy-D-glucose (DG), polyethylene glycol (PEG), and 9-D-arginine (9R). The optical properties, morphology and structure of 9R/DG-coated CdTe QDs were characterized by ultraviolet-visible spectrometry, fluorescence spectrum, Fourier transform infrared (FTIR), proton nuclear magnetic resonance (1H NMR), liquid chromatography-mass spectrometer (LC-MS), sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) and transmission electron micrographs (TEM). Furthermore, the biocompatibility, tumor targeted ability and transmembrane action of 9R/DG-coated CdTe QDs were studied. Results indicated that 9R/DG-coated CdTe QDs was constructed successfully by ligand exchange. The 9R/DG-coated CdTe QDs with the size of 8-10 nm had good dispersity and the absorbance and fluorescence peaks of CdTe QDs after modification were red shifted from 480 nm to 510 nm and 627 nm to 659 nm, respectively. In addition, the CdTe QDs modified by PEG, DG and 9R displayed good biocompatibility, high targeted ability to the cancer cells with glucose transporter type 1 (GLUT1) receptor high expression and obvious transmembrane ability.

  9. CdTe quantum dots as a novel biosensor for Serratia marcescens and Lipopolysaccharide.

    Science.gov (United States)

    Ebrahim, Sh; Reda, M; Hussien, A; Zayed, D

    2015-01-01

    The main objective of this work is to synthesize CdTe quantum dots (QDs) conjugated with Concanavalin A (Con A) as a novel biosensor to be selective and specific for the detection of Lipopolysaccharide (LPS). In addition, the conjugated CdTe QDs-Con A was used as fluorescence labels to capture Serratia marcescens bacteria through the recognition between CdTe QDs-Con A and LPS of S. marcescens. The appearance of the lattice plans in the high resolution transmission electron photograph indicated a high crystalline with an average size of 4-5 nm for the CdTe QDs. The results showed that the relative fluorescence intensity of CdTe QDs-Con A decreased linearly with LPS concentration in the range from 10 to 90 fg/mL and with correlation coefficient (R(2)) equal to 0.9713. LPS surrounding the S. marcescens bacteria was bound to the CdTe QDs-Con A and leads to quenching of PL intensity. It was found that a good linear relationship between the relative PL intensity and the logarithmic of cell population of S. marcescens in range from 1×10 to 1×10(6) CFU/mL at pH 7 with R(2) of 0.952 was established.

  10. Reflectance anisotropy spectra of CdTe(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez-Nava, R.A.; Arzate, N.; Mendoza, B.S. [Photonics Division, Centro de Investigaciones en Optica A. C., Leon, Guanajuato (Mexico)

    2010-08-15

    We present first-principles calculations of reflectance anisotropy spectra (RAS) of the more common CdTe(001) surface reconstructions: Te-terminated (2 x 1) and Cd-terminated (2 x 1) and c(2 x 2). The last two reconstructions with a Cd coverage of half atomic layers. Calculations have been performed by using the density-functional formalism within the local-density approximation + scissors corrections. The electron-ion interaction has been modeled by ab initio, relativistic norm-conserving pseudopotentials. We have also calculated RAS spectra using a semi-empirical tight binding method (SETB) within a sp{sup 3} s{sup *} basis. We show RAS of each surface reconstruction and compare our theoretical results with experimental results reported in the literature and we found a good agreement between experimental and theoretical spectra for the (2 x 1) reconstructions. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Electronic Band Structure and New Magneto-transport Properties in p-type Semiconductor Medium-infrared HgTe / CdTe Superlattice

    Science.gov (United States)

    Nafidi, Ab.; EL Abidi, A.; El Kaaouachi, A.; Nafidi, Ah.

    2005-06-01

    We report here the band structure and new magneto-transport results for HgTe (56 Å) / CdTe (30 Å) superlattice grown by molecular beam epitaxy (MBE). The angular dependence of the transverse magnetoresistance follows the two-dimensional (2D) behaviour. At low temperature, the sample exhibits p type conductivity with a concentration of 1.84×1012 cm-2 and a Hall mobility of 8200 cm2/Vs. The observed Shubnikov-de Haas effect gives a carrier density of 1.80×1012 cm-2. The superlattice heavy holes dominate the conduction in plane with an effective mass of 0.297 m0 and Fermi energy (2D) of 14 meV. In intrinsic regime, the measured gap Eg = 190 meV agree well with calculated Eg(Γ, 300 K) =178 meV. The formalism used here predicts that the system is semiconductor, for our HgTe to CdTe thickness ratio d1/d2 = 1,87, when d2 < 140 Å. In our case, d2=30 Å and Eg (Γ, 4.2 K) = 111 meV. In spite of it, the sample exhibits the features typical of a p type semiconductor and is a medium-infrared detector (7 μm< λ< 11 μm).

  12. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans.

    Science.gov (United States)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

    2015-01-01

    We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1-1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd(2+). Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  13. Development of a stacked detector system for the x-ray range and its possible applications

    Science.gov (United States)

    Maier, Daniel; Limousin, Olivier; Meuris, Aline; Pürckhauer, Sabina; Santangelo, Andrea; Schanz, Thomas; Tenzer, Christoph

    2014-07-01

    We have constructed a stacked detector system operating in the X-ray range from 0.5 keV to 250 keV that consists of a Si-based 64×64 DePFET-Matrix in front of a CdTe hybrid detector called Caliste-64. The setup is operated under laboratory conditions that approximate the expected environment of a space-borne observatory. The DePFET detector is an active pixel matrix that provides high count-rate capabilities with a near Fanolimited spectral resolution at energies up to 15 keV. The Caliste-64 hard X-ray camera consists of a 1mm thick CdTe crystal combined with very compact integrated readout electronics, constituting a high performance spectro-imager with event-triggered time-tagging capability in the energy range between 2 keV and 200 keV. In this combined geometry the DePFET detector works as the Low Energy Detector (LED) while the Caliste-64 - as the High Energy Detector (HED) - detects predominantly the high energetic photons that have passed the LED. In addition to the individual optimization of both detectors, we use the setup to test and optimize the performance of the combined detector system. Side-effects like X-ray fluorescence photons, electrical crosstalk, and mutual heating have negative impacts on the data quality and will be investigated. Besides the primary application as a combined imaging detector system with high sensitivity across a broad energy range, additional applications become feasible. Via the analysis of coincident events in both detectors we can estimate the capabilities of the setup to be used as a Compton camera and as an X-ray polarimeter - both desirable functionalities for use in the lab as well as for future X-ray missions.

  14. Infrared Detector Research

    Science.gov (United States)

    1976-08-01

    7n rtMT IC -)) .r i 11ON ,c- r < css ,- c.Cu7 At,! flut~C-. ,sp .’TICF SCOATT E IN3 ; "" IS tic srtr rT-’Cv TATION "r𔃾 ,- c I I7 ’ " ,,’-"it ! IY...larger the compositional variation within the solidified grain. The lattice constants for HgTe and CdTe are nearly the same allowing for large...composition slice is reached a pinkish core region begins to develop in the center of the slice. Its origin is not known although it may be CdTe rich

  15. FOXSI: Properties of optics and detectors for hard-X rays

    Science.gov (United States)

    Camilo Buitrago-Casas, Juan; Glesener, Lindsay; Christe, Steven; Krucker, Sam; Ishikawa, Shin-nosuke; Foster, Natalie

    2015-04-01

    The Focusing Optics X-ray Solar Imager (FOXSI) is a state-of-the-art direct focusing X-ray telescope designed to observe the Sun. This experiment completed its second flight onboard a sounding rocket last December 11, 2014 from the White Sands Missile Range in New Mexico. The optics use a set of iridium-coated nickel/cobalt mirrors made using a replication technique based on an electroformed perfect polished surface. Since this technique creates full shells that no need to be co-aligned with other segments, an angular resolution of up to ~5 arcsec is gotten. The FOXSI focal plane consists of seven double-sided strip detectors. Five Silicon and 2 CdTe detectors were used during the second flight.We present on various properties of Wolter-I optics that are applicable to solar HXR observation, including ray-tracing simulations of the single-bounce (“ghost ray”) patterns from sources outside the field of view and angular resolution for different source angles and effective area measurements of the FOXSI optics. We also present the detectors calibration results, paying attention to energy resolution (~0.5 keV), energy thresholds (~4-15 keV for Silicon and ~4-20 keV for CdTe detectors), and spatial coherence of these values over the entire detector.

  16. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    CERN Document Server

    Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

    2015-01-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

  17. Pixel detectors

    CERN Document Server

    Passmore, M S

    2001-01-01

    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  18. Calorimeter detectors

    CERN Document Server

    de Barbaro, P; The ATLAS collaboration

    2013-01-01

    Although the instantaneous and integrated luminosity in HL-LHC will be far higher than the LHC detectors were originally designed for, the Barrel calorimeters of the four experiments are expected to continue to perform well  throughout the Phase II program. The conditions for the End-Cap calorimeters are far more challenging and whilst some detectors will require relatively modest changes, others require far more substantial upgrades. We present the results of longevity and performance studies for the calorimeter systems of the four main LHC experiments and outline the upgrade options under consideration. We include a discussion of the R&D required to make the final technology choices for the upgraded detectors.

  19. van der Waals epitaxy of CdTe thin film on graphene

    Science.gov (United States)

    Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

    2016-10-01

    van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

  20. Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Salavei, A.; Rimmaudo, I. [Laboratory for Applied Physics, Department of Computer Science, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, F. [Laboratorio di Chimica dello Stato Solido, DB, Univ. Verona, and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Romeo, A., E-mail: alessandro.romeo@univr.it [Laboratory for Applied Physics, Department of Computer Science, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy)

    2013-05-01

    Due to its high scalability and low production cost, CdTe solar cells have shown a very strong potential for large scale energy production. Although the number of modules produced could be limited by tellurium scarcity, it has been reported that reducing CdTe thickness down to 1.5 μm would solve this issue. There are, however, issues to be considered when reducing thickness, such as formation of pinholes, lower crystallization, and different possible effects on material diffusion within the interfaces. In this work, we present the study of CdTe solar cells fabricated by vacuum evaporation with different CdTe thicknesses. Several cells with a CdTe thickness ranging from 0.7 to 6 μm have been fabricated. The deposition process has been optimized accordingly and their physical and electrical properties have been studied. Thin cells show a different electrical behavior in terms of open circuit voltage and fill factor. Efficiencies range from 7% for thin CdTe cells to 13.5% for the standard thickness. - Highlights: ► Ultra thin CdTe absorbers have been prepared and studied. ► Grain size is depending on the CdTe thickness but spread in the grains increases. ► Lattice parameter is reduced only for ultra thin CdTe. ► The band gap reveals an intermixed CdTe absorber. ► The reason for lower efficiency of ultra thin CdTe is explained.

  1. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Annual report, 1 February 1983-31 January 1984

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R; Fahrenbruch, A; Huber, W; Fortmann, C; Thorpe, T

    1984-09-01

    Variation of CdS/CdTe/graphite thick film solar cell properties was investigated as a function of temperature for CdS film deposition. A maximum open-circuit voltage of 0.67 V was found for a deposition temperature of 160/sup 0/C, corresponding to a CdS film resistivity of 150 ohm-cm. The effect is not due to avoidance of higher temperature annealing of the CdTe film in higher temperature CdS film depositions nor to the diffusion of In from the outermost CdS: In layer. The effect of coating the graphite before CdTe deposition with Au or Cu was also investigated. Although high concentrations of both Au or Cu could be determined after CdTe deposition, CdTe films grown on this coated graphite had lower hole densities than films grown on uncoated graphite. Photovoltaic parameters of thin-film CdS/CdTe/graphite solar cells were investigated as a function of storage time to check the stability of these cells. Initial degradation of parameters (especially fill factor) could be reversed by heat treatment in hydrogen, with subsequent properties being stable. Heat treatment of CdS/CdTe/graphite solar cells in air increases cell resistivity and decreases fill factor; heat treatment in hydrogen produces the reverse effect. The hole density is not affected by these heat treatments, suggesting that effects are associated with grain boundaries in the film.

  2. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 4, August 1-October 31, 1981

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R H

    1981-10-01

    The hot-wall vacuum evaporation system is nearly complete and the first films are expected in early December. CdTe homojunction cells were theoretically modelled and to some extent tested experimentally using the n-type CdTe film on p-type CdTe crystal homojunction cells previously deposited at Linz. Modelling emphasizes the known importance of surface recombination velocity for such homojunction cells. The n-type layer on the experimental cell was thinned by etching from 5 micrometers to 1.5 micrometers, with a corresponding increase in short-circuit current from 0.1 to 1 mA/cm/sup 2/. This behavior is as theoretically expected; to obtain a short-circuit current of 11 mA/cm/sup 2/, as required for a 10% cell, requires a thickness of about 0.2 micrometers for a surface recombination velocity of 10/sup 6/ cm/sec and other realistic cell parameters. By doping experiments on single crystal CdTe, it has been shown that the hole density does decrease when the P dopant density is decreased below a critical value in CdTe:P crystals, thus eliminating the possibility that the major acceptors in the P-doped crystals were not P impurity. Attempts to heavily dope CdTe with As were less successful, but this may be due to the use of elemental As as the dopant in this case rather than a compound of the dopant. Cs was shown to be an effective dopant of CdTe and resistivities as low as 0.3 ohm-cm corresponding to hole densities in the low 10/sup 17/ cm/sup -3/ range were obtained. An apparent correlation between the low-temperature barrier height associated with a grain boundary in CdTe and the angle of mismatch between the two grains has been observed. Improved capacitance of grain boundary measurements should yield defect densities.

  3. XMASS detector

    Energy Technology Data Exchange (ETDEWEB)

    Abe, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Hieda, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Hiraide, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Hirano, S. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kishimoto, Y.; Kobayashi, K.; Moriyama, S. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Nakagawa, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Nakahata, M. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Nishiie, H. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Ogawa, H. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); and others

    2013-07-11

    The XMASS project aims to detect dark matter, pp and {sup 7}Be solar neutrinos, and neutrinoless double beta decay using ultra pure liquid xenon. The first phase of the XMASS experiment searches for dark matter. In this paper, we describe the XMASS detector in detail, including its configuration, data acquisition equipment and calibration system.

  4. XMASS detector

    CERN Document Server

    Abe, K; Hiraide, K; Hirano, S; Kishimoto, Y; Kobayashi, K; Moriyama, S; Nakagawa, K; Nakahata, M; Nishiie, H; Ogawa, H; Oka, N; Sekiya, H; Shinozaki, A; Suzuki, Y; Takeda, A; Takachio, O; Ueshima, K; Umemoto, D; Yamashita, M; Yang, B S; Tasaka, S; Liu, J; Martens, K; Hosokawa, K; Miuchi, K; Murata, A; Onishi, Y; Otsuka, Y; Takeuchi, Y; Kim, Y H; Lee, K B; Lee, M K; Lee, J S; Fukuda, Y; Itow, Y; Nishitani, Y; Masuda, K; Takiya, H; Uchida, H; Kim, N Y; Kim, Y D; Kusaba, F; Motoki, D; Nishijima, K; Fujii, K; Murayama, I; Nakamura, S

    2013-01-01

    The XMASS project aims to detect dark matter, pp and $^{7}$Be solar neutrinos, and neutrinoless double beta decay using ultra pure liquid xenon. The first phase of the XMASS experiment searches for dark matter. In this paper, we describe the XMASS detector in detail, including its configuration, data acquisition equipment and calibration system.

  5. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-12-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  6. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao [Physics Department, Colorado State University, Fort Collins, Colorado 80523, USA; Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523, USA

    2016-06-17

    The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted

  7. Photodegradation of Mercaptopropionic Acid- and Thioglycollic Acid-Capped CdTe Quantum Dots in Buffer Solutions.

    Science.gov (United States)

    Miao, Yanping; Yang, Ping; Zhao, Jie; Du, Yingying; He, Haiyan; Liu, Yunshi

    2015-06-01

    CdTe quantum dots (QDs) were synthesized by 3-mercaptopropionic acid (MPA) and thioglycollic acid (TGA) as capping agents. It is confirmed that TGA and MPA molecules were attached on the surface of the QDs using Fourier transform infrared (FT-IR) spectra. The movement of the QDs in agarose gel electrophoresis indicated that MPA-capped CdTe QDs had small hydrodynamic diameter. The photoluminescence (PL) intensity of TGA-capped QDs is higher than that of MPA-capped QDs at same QD concentration because of the surface passivation of TGA. To systemically investigate the photodegradation, CdTe QDs with various PL peak wavelengths were dispersed in phosphate buffered saline (PBS) and Tris-borate-ethylenediaminetetraacetic acid (TBE) buffer solutions. It was found that the PL intensity of the QDs in PBS decreased with time. The PL peak wavelengths of the QDs in PBS solutions remained unchanged. As for TGA-capped CdTe QDs, the results of PL peak wavelengths in TBE buffer solutions indicated that S(2-) released by TGA attached to Cd(2+) and formed CdS-like clusters layer on the surface of aqueous CdTe QDs. In addition, the number of TGA on the CdTe QDs surface was more than that of MPA. When the QDs were added to buffer solutions, agents were removed from the surface of CdTe QDs, which decreased the passivation of agents thus resulted in photodegradation of CdTe QDs in buffer solutions.

  8. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

    2014-11-12

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  9. Optical and electrical properties of hydrothermally prepared CdTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hadia, N.M.A.; Awad, M.A.; Mohamed, S.H.; Ibrahim, E.M.M. [Sohag University, Physics Department, Faculty of Science, Sohag (Egypt)

    2016-10-15

    The hydrothermal process was used to synthesize CdTe nanowires (NWs). Various analytical techniques were used to characterize the obtained NWs. The wire diameters were in the range 35-60 nm, and the lengths were >5 μm. The CdTe NWs had zinc-blende crystal structure. The NWs had high uniformity and high yield. FTIR analysis revealed the presence of the characteristic vibrational spectra of oxygen and hydrogen bounded to Cd and Te in CdTe NWs. The optical band gap value was 2.09 eV. The CdTe NWs showed a strong red emission band centered around 620.3 nm. The conductivity measurements were carried out in the temperature range 300-500 K and in air atmosphere. Two types of conduction mechanisms were observed with activation energies of 0.27 and 0.17 eV at high and low temperature regions, respectively. These results validate the potential of CdTe NWs for optoelectronic applications. (orig.)

  10. Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

    Institute of Scientific and Technical Information of China (English)

    Li Jin; Yang Linyu; Jian Jikang; Zou Hua; Sun Yanfei

    2009-01-01

    Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrystalline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.

  11. BSA activated CdTe quantum dot nanosensor for antimony ion detection.

    Science.gov (United States)

    Ge, Shenguang; Zhang, Congcong; Zhu, Yuanna; Yu, Jinghua; Zhang, Shuangshuang

    2010-01-01

    A novel fluorescent nanosensor for Sb(3+) determination was reported based on thioglycolic acid (TGA)-capped CdTe quantum dot (QD) nanoparticles. It was the first antimony ion sensor using QD nanoparticles in a receptor-fluorophore system. The water-soluable TGA-capped CdTe QDs were prepared through a hydrothermal route, NaHTe was used as the Te precursor for CdTe QDs synthesis. Bovine serum albumin (BSA) conjugated to TGA-capped CdTe via an amide link interacting with carboxyl of the TGA-capped CdTe. When antimony ion enters the BSA, the lone pair electrons of the nitrogen and oxygen atom become involved in the coordination, switching off the QD emission and a dramatic quenching of the fluorescence intensity results, allowing the detection of low concentrations of antimony ions. Using the operating principle, the antimony ion sensor based on QD nanoparticles showed a very good linearity in the range 0.10-22.0 microg L(-1), with the detection limit lower than 2.94 x 10(-8) g L(-1) and the relative standard deviation (RSD) 2.54% (n = 6). In a study of interferences, the antimony-sensitive TGA-QD-BSA sensor showed good selectivity. Therefore, a simple, fast, sensitive, and highly selective assay for antimony has been built. The presented method has been applied successfully to the determination of antimony in real water samples (n = 6) with satisfactory results.

  12. Luminescent behavior of CdTe quantum dots: Neodymium(III) complex-capped nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Margarida S. [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal); Algarra, Manuel, E-mail: magonzal@fc.up.pt [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal); Jimenez-Jimenez, Jose; Rodriguez-Castellon, Enrique [Departamento de Quimica Inorganica, Facultad de Ciencias, Universidad de Malaga, Campus de Teatinos s/n 29071, Malaga (Spain); Campos, Bruno B.; Esteves da Silva, Joaquim C.G. [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal)

    2013-02-15

    A water soluble complex of neodymium(III) with CdTe quantum dots nanoparticles was synthesized. The obtained homogeneous solutions were characterized by fluorescence, X-ray photoelectron and energy dispersive X-ray spectroscopies. The effect of the refluxing time of the reaction on the fluorescence intensity and emission wavelength has been studied. It was found that the emission wavelength of the solutions of neodymium(III) complex capped CdTe QDs nanoparticles shifted from about 540 to 735 nm. For an emission wavelength of 668 nm, the most reproducible nanoparticles obtained, the pH effect over the fluorescence emission and its intensity were studied. The purified and lyophilized solid obtained was morphologically characterized by transmission electron microscopy (TEM). The quantitative composition was determined by fluorescence X-ray spectroscopy (EDAX) and the X-ray photoelectron analysis (XPS) confirmed the presence of neodymium(III) at the surface of the CdTe nanoparticles forming a complex with the carboxylate groups from 3-mercaptopropanoic acid of the CdTe QDs. Due to the optical behavior of this complex, it could be of potential interest as a light source in optical devices. - Highlights: Black-Right-Pointing-Pointer CdTe quantum dots nanoparticles. Black-Right-Pointing-Pointer Neodymium(III) complexed quantum dots. Black-Right-Pointing-Pointer Strong red fluorescent emission nanomaterial soluble in water.

  13. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Shamara [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Vatavu, Sergiu, E-mail: svatavu@usm.md [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Evani, Vamsi; Khan, Md; Bakhshi, Sara; Palekis, Vasilios [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Rotaru, Corneliu [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Ferekides, Chris [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States)

    2015-05-01

    A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects. - Highlights: • Photoluminescense (PL) of CdTe thin films is present in the 0.8-1.6 eV spectral region. • High intensity excitonic peaks are among the main radiative paths. • Radiative transitions at 1.36x eV are assisted by dislocations caused levels. • Extremal Cd/Te overpressure ratios enhance PL for 1.497 eV, 1.486 eV, 1.474 eV bands. • PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.

  14. The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    Ala J. Al-Douri

    2011-01-01

    Full Text Available Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5 were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K. The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films as Ts increases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2 decreases with increasing Ts and dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasing Ts and upon doping with Al at more than 0.5%. The carrier concentration decreases as Ts increases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

  15. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Science.gov (United States)

    Luo, H.; Ma, L. G.; Xie, W. M.; Wei, Z. L.; Gao, K. G.; Zhang, F. M.; Wu, X. S.

    2016-04-01

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na2TeO3 instead of the usually used TeO2. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells.

  16. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

    Science.gov (United States)

    Okamoto, Tamotsu; Kitamoto, Shinji; Yamada, Akira; Konagai, Makoto

    2001-05-01

    The control of native defects in the CdTe thin film solar cells was investigated using a novel source for close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and the Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2% because of the extremely low shunt resistance. On the other hand, a conversion efficiency above 15% was obtained by using the Cd-rich source. Capacitance-voltage (C-V) characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed using the Cd-rich source.

  17. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  18. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, H.; Ma, L.G.; Xie, W.M.; Wei, Z.L.; Gao, K.G.; Zhang, F.M.; Wu, X.S. [Nanjing University, Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructures, School of Physics, Nanjing (China)

    2016-04-15

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na{sub 2}TeO{sub 3} instead of the usually used TeO{sub 2}. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells. (orig.)

  19. Quantitative determination of uric acid using CdTe nanoparticles as fluorescence probes.

    Science.gov (United States)

    Jin, Dongri; Seo, Min-Ho; Huy, Bui The; Pham, Quoc-Thai; Conte, Maxwell L; Thangadurai, Daniel; Lee, Yong-Ill

    2016-03-15

    A convenient enzymatic optical method for uric acid detection was developed based on the fluorescence quenching of ligand-capped CdTe nanoparticles by H2O2 which was generated from the enzymatic reaction of uric acid. The interactions between the CdTe nanoparticles capped with different ligands (glutathione, 3-mercaptopropionic acid, and thioglycerol) and H2O2 were investigated. The fluorescence quenching studies of GSH-capped CdTe nanoparticles demonstrated an excellent sensitivity to H2O2. The effects of uric acid, uricase and H2O2 on the fluorescence intensity of CdTe nanoparticles were also explored. The detection conditions, reaction time, pH value, incubation period and the concentration of uricase and uric acid were optimized. The detection limit of uric acid was found to be 0.10 µM and the linear range was 0.22-6 µM under the optimized experimental conditions. These results typify that CdTe nanoparticles could be used as a fluorescent probe for uric acid detection.

  20. Two distinct photoluminescence responses of CdTe quantum dots to Ag (I)

    Energy Technology Data Exchange (ETDEWEB)

    Xia Yunsheng; Cao Chun [Anhui Key Laboratory of Functional Molecular Solids, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, Anhui 241000 (China); Zhu Changqing [Anhui Key Laboratory of Functional Molecular Solids, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, Anhui 241000 (China)], E-mail: zhucq625@163.com

    2008-01-15

    Four sizes of water-soluble thiol-capped CdTe quantum dots (QDs) have been synthesized and used to investigate the photoluminescence (PL) responses to Ag{sup +} ions. For small particles, the CdTe QDs exhibit PL enhancement in the presence of lower concentration of Ag{sup +} but show obvious quenching with the further increase of Ag{sup +}; for larger particles, however, PL of CdTe QDs is quenched all the time with the Ag{sup +} addition, no PL enhancement is observed. Mechanism study shows that small QDs with more traps on the particle surface are effectively passivated by initial adsorbed Ag{sup +}, which accounts for the PL enhancement observed; after the initial traps are saturated, the excess Ag{sup +} facilitates nonradiative recombination, resulting in PL quenching. For larger particles, the nonradiative recombination dominates the whole process even for the lower concentration of Ag{sup +}, due to the fewer traps on the QD surface. Compared with larger particles, the small CdTe QDs are more suitable for sensing Ag{sup +} because of the more sensitive and selective PL response. To our best knowledge, this is the first systematical study on the interaction of Ag{sup +} with different-sized CdTe QDs.

  1. Time-Resolved Photoluminescence Spectroscopy Evaluation of CdTe and CdTe/CdS Quantum Dots

    OpenAIRE

    Yuan, Zhimin; Yang, Ping; Cao, Yongqiang

    2012-01-01

    CdTe and CdTe/CdS quantum dots (QDs) were prepared in aqueous solutions using thioglycolic acid as a stabilizing agent. The photoluminescence (PL) wavelength of the QDs depended strongly on the size of CdTe cores and the thickness of CdS shells. Being kept at room temperature for 130 days, the PL wavelength of CdTe and CdTe/CdS QDs was red-shifted. However the red-shifted degree of CdTe QDs is larger than that of CdTe/CdS QDs. The size of CdTe QDs and the thickness of CdS play important roles...

  2. Effects of processing temperature on the thickness of CdS and the performance of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Tetali, B.; Marinskiy, D.; Marinskaya, S.; Morel, D. [Department of Electrical Engineering, Center for Clean Energy and Vehicles, University of South Florida, Tampa, Florida 33620 (United States)

    1997-02-01

    CdTe cells have been fabricated on soda lime glass substrates. The effect of the CdS thickness and CdTe deposition temperature on the spectral response (SR) and solar cell parameters has been studied. The CdTe deposition temperature has been found to be a key processing parameter in determining the extent of interdiffusion at the CdTe and CdS interface. When the deposition of CdTe is carried out at high temperatures a significant portion of the CdS films is {open_quotes}lost{close_quotes} due to interdiffusion which leads to enhancement of the blue response of the solar cells. Devices with identical blue response (400{endash}500 nm) have been fabricated even though the starting CdS thicknesses were different; the cells for which the starting CdS thickness was greater exhibited higher open-circuit voltages and fill factors. {copyright} {ital 1997 American Institute of Physics.}

  3. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  4. Caliste 256: A CdTe imaging spectrometer for space science with a 580 {mu}m pixel pitch

    Energy Technology Data Exchange (ETDEWEB)

    Limousin, O., E-mail: olimousin@cea.fr [CEA/Saclay, DSM/Irfu/Service d' Astrophysique, F-91191 Gif-sur-Yvette (France); Lugiez, F.; Gevin, O. [CEA/Saclay, DSM/Irfu/Service d' Electronique Detecteurs et Informatique, F-91191 Gif-sur-Yvette (France); Meuris, A.; Blondel, C. [CEA/Saclay, DSM/Irfu/Service d' Astrophysique, F-91191 Gif-sur-Yvette (France); Delagnes, E. [CEA/Saclay, DSM/Irfu/Service d' Electronique Detecteurs et Informatique, F-91191 Gif-sur-Yvette (France); Donati, M.; Le Mer, I.; Martignac, J.; Pinsard, F. [CEA/Saclay, DSM/Irfu/Service d' Astrophysique, F-91191 Gif-sur-Yvette (France); Vassal, M.C.; Bocage, R.; Soufflet, F. [3D Plus, 641 rue Helene Boucher, F-78532 Buc (France)

    2011-08-11

    Caliste project aims at hybridizing 1 cm{sup 2} CdTe or CdZnTe pixel detectors with low-noise full custom front-end electronics, in a single component standing in a 1x1x2 cm{sup 3} volume. Caliste device is 4-side buttable and can be used as elementary detection unit of a large mosaic to form a hard X-ray focal plane of any size and shape. Caliste is especially designed to match astronomical space mission requirements and its design takes into account environmental constraints, radiation environment in particular. This new imaging spectrometer for hard X-rays detection offers high spectral and spatial resolution together with accurate time-tagging capability and low dead time. Caliste concept relies on a 3D hybridization technology that consists in stacking full custom ASICs perpendicular to the detection surface into a single component. This technique simultaneously permits to realize a buttable imager and to enhance performance and uniformity response. Our last prototype is called Caliste 256 and integrates 16x16 pixels array, 580 {mu}m pitch and 256 corresponding independent spectroscopy channels. This paper presents Caliste 256 design and properties. We emphasize spectral performance and demonstrate spectral resolution capabilities better than 1 keV FWHM at 60 keV.

  5. 3D non-destructive fluorescent X-ray computed tomography (FXCT) with a CdTe array

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Chang Yeon; Lee, Won Ho; Kim, Young Hak [Dept. of Bio-convergence Engineering, Korea University Graduate School, Seoul (Korea, Republic of)

    2015-10-15

    In our research, the material was exposed to an X-ray and not only the conventional transmission image but also 3D images based on the information of characteristic X-ray detected by a 2D CdTe planar detector array were reconstructed. Since atoms have their own characteristic X-ray energy, our system was able to discriminate materials of even a same density if the materials were composed of different atomic numbers. We applied FXCT to distinguish various unknown materials with similar densities. The materials with similar densities were clearly distinguished in the 3D reconstructed images based on the information of the detected characteristic X-ray, while they were not discriminated from each other in the images based on the information of the detected transmission X-ray. In the fused images consisting of 3D transmitted and characteristic X-ray images, all of the positions, densities and atomic numbers of materials enclosed in plastic phantom or pipe were clearly identified by analyzing energy, position and amount of detected radiation.

  6. Ion implantation of CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Wiecek Tomasz

    2017-01-01

    Full Text Available Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2. The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  7. Structural and AC conductivity study of CdTe nanomaterials

    Science.gov (United States)

    Das, Sayantani; Banerjee, Sourish; Sinha, T. P.

    2016-04-01

    Cadmium telluride (CdTe) nanomaterials have been synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to cubic structure with the average particle size of 20 nm. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 313 to 593 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The frequency dependence of real and imaginary parts of dielectric permittivity is analyzed using modified Cole-Cole equation. The temperature dependence relaxation time is found to obey the Arrhenius law having activation energy ~0.704 eV. The frequency dependent conductivity spectra are found to follow the power law. The frequency dependence ac conductivity is analyzed by power law.

  8. Recombination by grain-boundary type in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John, E-mail: john.moseley@nrel.gov; Ahrenkiel, Richard K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401 (United States); Metzger, Wyatt K.; Moutinho, Helio R.; Guthrey, Harvey L.; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Paudel, Naba; Yan, Yanfa [Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)

    2015-07-14

    We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB “type.” We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5–49), and general GBs (Σ > 49), which make up ∼47%–48%, ∼6%–8%, and ∼44%–47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%–18% of Σ = 3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl{sub 2}-treated films were studied. The CdCl{sub 2} treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl{sub 2} treatment.

  9. CdTe reflection anisotropy line shape fitting

    Energy Technology Data Exchange (ETDEWEB)

    Molina-Contreras, J.R., E-mail: rmolina@correo.ita.mx [Departamento de Ingenieria Electrica y Electronica, Instituto Tecnologico de Aguascalientes, Av. Lopez Mateos 1801 Ote. Fracc. Bona Gens, Aguascalientes, Ags, 20256 (Mexico)

    2010-10-25

    In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E{sub 1} and E{sub 1} + {Delta}{sub 1} transition region in II-VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.

  10. Ion implantation of CdTe single crystals

    Science.gov (United States)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2016-12-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  11. Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Burst, James; Guthrey, Harvey L.; Metzger, Wyatt K.

    2016-11-21

    We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.

  12. CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

    Directory of Open Access Journals (Sweden)

    Ghasem Rezanejade Bardajee

    2013-01-01

    Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

  13. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R. (Colorado State Univ., Fort Collins, CO (United States))

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  14. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    Directory of Open Access Journals (Sweden)

    Hao Xue

    2016-07-01

    Full Text Available Solution-processed CdTe nanocrystals (NCs photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values comparable to those of commercial thin film CdTe/CdS solar cells fabricated by the close-space sublimation (CSS method. Here we review the progress and prospects in this field, focusing on new insights into CdTe NCs synthesized, device fabrication, NC solar cell operation, and how these findings give guidance on optimizing solar cell performance.

  15. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  16. Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

    Science.gov (United States)

    Escobedo, A.; Quinones, S.; Adame, M.; McClure, J.; Zubia, D.; Brill, G.

    2010-04-01

    Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480°C and 540°C, maintaining an average constant source-substrate temperature difference Δ T of ˜130°C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 μm/h to 4 μm/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe(111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.

  17. Advances in the In-House CdTe Research Activities at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T.; Wu, X.; Dhere, R.; Moutinho, H.; Smith, S.; Romero, M.; Zhou, J.; Duda, A.; Corwine, C.

    2005-01-01

    NREL in-house CdTe research activities have impacted a broad range of recent program priorities. Studies aimed at industrially relevant applications have produced new materials and processes that enhance the performance of devices based on commercial materials (e.g., soda-lime glass, SnO2:F). Preliminary tests of the effectiveness of these novel components using large-scale processes have been encouraging. Similarly, electro- and nano-probe techniques have been developed and used to study the evolution and function of CdTe grain boundaries. Finally, cathodoluminescence (CL) and photoluminescence (PL) studies on single-crystal samples have yielded improved understanding of how various processes may combine to produce important defects in CdTe films.

  18. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Science.gov (United States)

    Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.; Kuciauskas, Darius; Metzger, Wyatt K.

    2016-11-01

    CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  19. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Directory of Open Access Journals (Sweden)

    James M. Burst

    2016-11-01

    Full Text Available CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm−3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  20. Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Choi Hyojeong

    2016-09-01

    Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

  1. X-ray Peltier cooled detectors for X-ray fluorescence analysis

    Energy Technology Data Exchange (ETDEWEB)

    Loupilov, A. E-mail: bsi@bsi.lv; Sokolov, A.; Gostilo, V

    2001-06-01

    The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i-n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1.) Si(Li) detectors: S=20 mm{sup 2}, thickness=3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S=100 mm{sup 2}; thickness=4.5 mm, 270 eV (5.9 keV), 485 eV (59.6 keV). (2.) Si-planar detector: S=10 mm{sup 2}, thickness=0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3.) CdTe p-i-n detectors: S=16 mm{sup 2}, thickness=0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S=16 mm{sup 2}, thickness=1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, cryminalistics and history of art are demonstrated.

  2. Preparation and multicolored fluorescent properties of CdTe quantum dots/polymethylmethacrylate composite films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanni; Liu, Jianjun, E-mail: jjliu717@aliyun.com; Yu, Yingchun; Zuo, Shengli

    2015-10-25

    A new simple route was presented for the preparation of stable fluorescent CdTe/polymethylmethacrylate (CdTe/PMMA) composite films by using hydrophilic thioglycolic acid capped CdTe quantum dots (TGA-CdTe QDs) and polymethylmethacrylate (PMMA) as raw materials. The TGA-CdTe QDs were firstly exchanged with n-dodecanethiol (DDT) to become hydrophobic DDT-CdTe QDs via a ligand exchange strategy, and then incorporated into PMMA matrix to obtain fluorescent CdTe/PMMA composite films. The structure and optical properties of DDT-CdTe QDs and CdTe/PMMA composite films were investigated by XRD, IR, UV and PL techniques. The results indicated that the obtained DDT-CdTe QDs well preserved the intrinsic structure and the maximum emission wavelength of the initial water-soluble QDs and the resulting 6.10 wt% CdTe/PMMA composite film exhibited significantly enhanced PL intensity. Furthermore, the multicolored composite films with green, yellow-green, yellow and orange light emissions were well tuned by incorporating the CdTe QDs of various maximum emission wavelengths. The TEM image demonstrated that the CdTe QDs were well-dispersed in the PMMA matrix without aggregation. Superior photostability of QDs in the composite film was confirmed by fluorescence lifetime measurement. Thermo-gravimetric analysis of CdTe/PMMA composite films showed no obvious enhancement of thermal stability compared with pure PMMA. - Highlights: • Ligand-exchange strategy was used to render CdTe QDs oil-soluble. • CdTe QDs were incorporated into PMMA matrix to fabricate fluorescent films. • The resulting 6.10 wt% CdTe/PMMA film exhibited significantly enhanced PL intensity. • Fluorescent colors of films were tuned by varying the λ{sub em} of incorporated CdTe QDs.

  3. Facile method to prepare CdS nanostructure based on the CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ligang; Chen, Yuehui; Wei, Zelu; Cai, Hongling; Zhang, Fengming; Wu, Xiaoshan, E-mail: xswu@nju.edu.cn

    2015-09-15

    Graphical abstract: - Highlights: • CdS nanostructure is directly fabricated on CdTe film only by heating treatment under H{sub 2}S/N{sub 2} mixed atmosphere at a relatively low temperature (450 °C) with gold layer as the intermediate. • Nanostructure of CdS layer, varying from nanowires to nanosheets, may be controlled by the thickness of gold film. • The change of morphology adjusts its luminescence properties. - Abstract: Nanostructured cadmium sulfide (CdS) plays critical roles in electronics and optoelectronics. In this paper, we report a method to fabricate CdS nanostructure directly on CdTe film, via a thermal annealing method in H{sub 2}S/N{sub 2} mixed gas flow at a relatively low temperature (450 °C). The microstructure and optical properties of CdS nanostructure are investigated by X-ray diffraction, transmission electron microscopy, Raman, and photoluminescence. The morphology of CdS nanostructure, evolving from nanowires to nanosheets, can be controlled by the thickness of Au film deposited on the CdTe film. And CdS nanostructures are single crystalline with the hexagonal wurtzite structure. Raman spectroscopy under varying the excitation wavelengths confirm that synthesized CdS-CdTe films contain two layers, i.e., CdS nanostructure (top) and CdTe layer (bottom). The change of morphology modifies its luminescence properties. Obviously, through simply thermal annealing in H{sub 2}S/N{sub 2} mixed gas, fabricating CdS nanostructure on CdTe film can open up the new possibility for obtaining high efficient CdTe solar cell.

  4. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  5. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  6. Post-growth CdCl₂ treatment on CdTe thin films grown on graphene layers using a close-spaced sublimation method.

    Science.gov (United States)

    Jung, Younghun; Yang, Gwangseok; Chun, Seungju; Kim, Donghwan; Kim, Jihyun

    2014-05-05

    We investigated the morphological, structural and optical properties of CdCl₂-treated cadmium telluride (CdTe) thin films deposited on defective graphene using a close-spaced sublimation (CSS) system. Heat treatment in the presence of CdCl₂ caused recrystallization of CSS-grown CdTe over the as-deposited structures. The preferential (111) orientation of as-deposited CdTe films was randomized after post-growth CdCl₂ treatment. New small grains (bumps) on the surface of CdCl₂-treated CdTe films were ascribed to nucleation of the CdTe grains during the CdCl₂ treatment. The properties of as-deposited and CdCl₂-treated CdTe films were characterized by room temperature micro-photoluminescence, micro-Raman spectroscopy, scanning electron microscopy, and X-ray diffraction analysis. Our results are useful to demonstrate a substrate configuration CdTe thin film solar cells.

  7. Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

    OpenAIRE

    Es'haghi Gorji, Nima

    2014-01-01

    CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized wat...

  8. Properties of CdTe layers deposited by a novel method -Pulsed Plasma Deposition

    OpenAIRE

    Ancora, C.; Nozar, P.; Mittica, G.; Prescimone, F.; A. Neri; Contaldi, S.; Milita, S.; Albonetti, C.; Corticelli, F.; Brillante, A.; Bilotti, I.; Tedeschi, G.; Taliani, C.

    2011-01-01

    CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. ...

  9. Rf sputtering of CdTE and CdS for thin film PV

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Tabory, C.N.; Shao, M.; Fischer, A.; Feng, Z.; Bohn, R.G. (Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States))

    1994-06-30

    In late 1992 we demonstrated the first rf sputtered CdS/CdTe photovoltaic cell with efficiency exceeding 10%. In this cell both CdS and CdTe layers were deposited by rf sputtering. In this paper we report preliminary measurements of (1) optical emission spectroscopy of the rf plasma, (2) the width of the phonon Raman line as a function of deposition temperature for CdS, and (3) studies of oxygen doping during pulsed laser deposition of CdTe.

  10. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    OpenAIRE

    Zulkarnain Zainal; Mohd Norizam Md Daud; Azmi Zakaria; Mohd Sabri Mohd Ghazali; Atefeh Jafari; Wan Rafizah Wan Abdullah

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the ...

  11. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, Baton Rouge, LA)

    1998-10-26

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  12. The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

    OpenAIRE

    Al-Douri, Ala J.; Al-Shakily, F. Y.; Alnajjar, Abdalla A.; Maysoon F. A. Alias

    2011-01-01

    Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdT...

  13. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  14. Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics

    Science.gov (United States)

    Mendis, B. G.; Gachet, D.; Major, J. D.; Durose, K.

    2015-11-01

    A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps ) within the grains and are rapidly quenched at the grain boundary. However, a ˜47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.

  15. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    Science.gov (United States)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Mayo, B.; Levi, D. H.; Kazmerski, L. L.

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 °C and completely recrystallized after the same treatment at 400 °C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  16. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    OpenAIRE

    Hao Xue; Rongfang Wu; Ya Xie; Qiongxuan Tan; Donghuan Qin; Hongbin Wu; Wenbo Huang

    2016-01-01

    Solution-processed CdTe nanocrystals (NCs) photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values compar...

  17. Electronic structure, structural and optical properties of thermally evaporated CdTe thin films

    OpenAIRE

    S Lalitha; Karazhanov, S. Zh.; Ravindran, P.; Senthilarasu, S.; Sathyamoorthy, R.; Janabergenov, J.

    2006-01-01

    Thin films of CdTe were deposited on glass substrates by thermal evaporation. From the XRD measurements itis found that the films are of zinc-blende-type structure. Transmittance, absorption, extinction, and refractive coefficients are measured. Electronic structure, band parameters and optical spectra of CdTe were calculated from ab initio studies within the LDA and LDA+U approximations. It is shown that LDA underestimates the band gap, energy levels of the Cd-4d states, s-d coupling and ban...

  18. Compensation models in chlorine doped CdTe based on positron annihilation and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stadler, W.; Hofman, D.M.; Meyer, B.K. [Technische Universitaet Muenchen, Garching (Germany); Krause-Rehberg, R.; Polity, A.; Abgarjan, Th. [Martin-Luther Universitaet Halle-Wittenberg, FB Physik, Halle (Germany); Salk, M.; Benz, K.W. [Kristallographisches Institut, Universitaet Freiburg, Freiburg (Germany); Azoulay, M. [Soreq, Nuclear Research Centre, Yavne (Israel)

    1995-12-31

    In this investigation positron annihilation, photoluminescence and electron paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explain by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electron paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy. (author). 9 refs, 2 figs, 1 tab.

  19. The role of stress in CdTe quantum dot doped glasses

    Science.gov (United States)

    de Thomaz, A. A.; Almeida, D. B.; Pelegati, V. B.; Carvalho, H. F.; Moreira, S. G. C.; Barbosa, L. C.; Cesar, C. L.

    2016-11-01

    In this work, we unequivocally demonstrate the influence of matrix-related stresses on quantum dots by measuring, side by side, a CdTe quantum dot doped glass and a colloidal sample with similar sizes. We measured the fluorescence spectra and fluorescence lifetime for both samples as a function of the temperature. We show that the expansion coefficient mismatch between CdTe quantum dots and the glass host causes stresses and drastically changes its behavior compared to its colloidal counterpart, even leading to phase transitions. This finding indicates that most experimental data on glass-doped quantum dots used to validate confinement models should be revised, taking stress into account.

  20. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, LA)

    1998-10-29

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  1. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    Science.gov (United States)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  2. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    Science.gov (United States)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-10-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  4. Characterization and photoluminescence studies of CdTe nanoparticles before and after transfer from liquid phase to polystyrene

    Indian Academy of Sciences (India)

    Shugang Wang; Yaoxian Li; Jie Bai; Qingbiao Yang; Yan Song; Chaoqun Zhang

    2009-10-01

    The major objective of this work was to detect the change of photoluminescence (PL) intensity of CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electrospinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyltrimethylammonium bromide (CTAB), and finally, transferred into PS matrix to form CdTe/PS nanofibres by electrospinning. Then, CdTe/PS nanofibres were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM) to observe their morphology and distribution, respectively. The selective area electronic diffraction (SAED) pattern proved that the CdTe NPs were cubic lattice. The PL spectrum indicated that CdTe NPs have been transferred into PS nanofibres, and the PL intensity of CdTe NPs in the nanofibres was even higher than that before CdTe NPs were introduced into PS nanofibres. Moreover, X-ray photoelectron spectra (XPS) revealed that thiol-stabilized CdTe NPs were enwrapped by CTAB, and PS acted as a dispersant in the process of electrospinning.

  5. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    Science.gov (United States)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  6. Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 µm

    Science.gov (United States)

    Amin, Nowshad; Isaka, Takayuki; Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    1999-08-01

    This study focuses on the technique for the stable growth of CdTe (1.44 eV) with thickness near its absorption length, 1 µm, by close spaced sublimation (hereafter CSS) process, in order to achieve high conversion efficiency. X-ray diffraction (XRD) spectroscopy was carried out to examine the microstructure of the films. Current-voltage (I V) characteristics, spectral response and other features of the solar cells using these CdTe films were investigated to elucidate the optimum conditions for achieving the best performance in such thin (1 µm) CdTe solar cells. Thickness was found to be reduced by controlling the temperature profile used during CSS growth. The temperature profile was found to be an important factor in growing high-quality thin films. By controlling the growth parameters and optimizing the annealing temperature at different fabrication steps, we have succeeded, to date, in achieving cell efficiencies of 14.3% (open-circuit voltage (Voc): 0.82 V, short-circuit current (Jsc): 25.2 mA/cm2, fill factor (F.F.): 0.695, area: 1 cm2) with 5 µm, 11.4% (Voc: 0.77 V, Jsc: 23.7 mA/cm2, F.F.: 0.63, area: 1 cm2) with 1.5 µm and 11.2% (Voc: 0.77 V, Jsc: 23.1 mA/cm2, F.F.: 0.63, area: 1 cm2) with only 1 µm of CdTe layer thickness at an air mass of 1.5 without antireflection coatings. This is important for establishing a strong foundation before developing a new structure (e.g., glass/ITO/CdS/CdTe/ZnTe/Ag configuration) with a back surface field of wide-bandgap material (e.g., ZnTe).

  7. Superior stability of ultra thin CdTe solar cells with simple Cu/Au back contact

    Energy Technology Data Exchange (ETDEWEB)

    Rimmaudo, Ivan; Salavei, Andrei; Xu, Bing Lei; Di Mare, Simone; Romeo, Alessandro, E-mail: alessandro.romeo@univr.it

    2015-05-01

    Due to its high scalability and low production cost, CdTe has shown a significant potential for high mass production, resulting to be one of the cheapest photovoltaic technologies available. Efficiencies exceeding 20% have been obtained by the application of high temperature CdTe deposition. However tellurium scarcity is a limitation for mass production and one of the possibilities to overcome this is the reduction of absorber thickness. We have already demonstrated efficiencies above 11% for devices with 1.5 μm thick CdTe. Nowadays we have fabricated ultra-thin absorber devices performing more than 13% efficiencies. But what is most interesting is that we have observed a different electrical operation and stability, connected to the fact that the depletion region takes a very large part of the device. In this work many CdTe solar cells with a standard Cu/Au back contact, made with different absorber thicknesses, were prepared, stored in dark and tested at different aging times, showing different reactions to the aging and in particular a remarkable stability as CdTe thickness reduces. - Highlights: • CdTe/CdS devices with 0.7, 1 and 1.8 μm thick absorbers have been prepared. • Superior stability in dark aging of ultra thin CdTe devices has been registered. • Electrical analysis shows different behaviors and nature of defects for thin CdTe samples. • For 6 μm CdTe samples degradation is driven mainly by defect compensation. • For ultra thin CdTe samples, degradation is dominated by impurities from the front contact.

  8. Long Carrier Lifetimes in Large-Grain Polycrystalline CdTe Without CdCl2

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, Soren A.; Burst, James M.; Duenow, Joel N.; Guthrey, Harvey L.; Moseley, John; Moutinho, Helio R.; Johnston, Steve W.; Kanevce, Ana; Al-Jassim, Mowafak M.; Metzger, Wyatt K.

    2016-06-27

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  9. Physical properties of Bi-doped CdTe thin films deposited by cosputtering

    Energy Technology Data Exchange (ETDEWEB)

    Becerril, M.; Zelaya-Angel, O. [Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 Mexico D.F. (Mexico); Vigil-Galan, O.; Contreras-Puente, G.; Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D.F. (Mexico)

    2007-03-15

    The structural, morphological, electrical, and optical properties of CdTe-Bi cosputtered thin films related with composition are presented. The films were grown on Corning glass substrates at room temperature from a CdTe-Bi target. The composition measurements show that the Bi content in the films ranges from x = 0.0 to x = 6.37 at%, depending on the area fraction covered by the Bi piece attached to the CdTe target. The structure of the annealed films was determined from X-ray diffraction measurements. Two kinds of structures were observed, depending on the Bi content: (1) CdTe polycrystalline films containing a small amount of Bi that is probably incorporated in the Cd and Te sites of the CdTe lattice. (2) Amorphization of the polycrystalline films, with higher Bi content. From the experimental results, we concluded that using this deposition method n/p-type Bi-doped CdTe polycrystalline films can be produced with electrical resistivity between 10{sup 2}-10{sup 3} {omega} cm and electron mobility between 10{sup 1} and 10{sup 2} cm{sup 2}V{sup -1}s{sup -1}. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Application of Lithium Chloride Dopant in Fabrication of CdTe Solar Cells

    Science.gov (United States)

    Xu, Hang; Zeng, Guanggen; Feng, Lianghuan; Wu, Lili; Liu, Cai; Ren, Shengqiang; Li, Kang; Li, Bing; Li, Wei; Wang, Wenwu; Zhang, Jingquan

    2017-02-01

    We report use of lithium chloride (LiCl) as a non-Cd dopant to deal with the environmental issues associated with use of traditional CdCl2 dopant in CdTe solar cells. It has been found that, after LiCl treatment, device performance parameters including external quantum efficiency and conversion efficiency were improved considerably, being comparable to those of a counterpart treated with CdCl2. The optimal efficiency of 9.58% was obtained at 405°C, and V oc as high as ˜737.3 mV was obtained at 385°C. Thorough study of the properties of the CdTe film treated by LiCl by x-ray diffraction analysis, scanning electron microscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectroscopy further verified the feasibility of posttreatment with nontoxic LiCl for fabrication of CdTe photovoltaic devices. The doping level of p-type CdTe thin film was improved by lithium. This represents a nontoxic approach for fabrication of commercial CdS/CdTe thin-film solar cells with better performance.

  11. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  12. Effects of heat treatment on diffusion of Cu atoms into CdTe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Soo, Y. L. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Huang, S. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Kim, S. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Kioseoglou, G. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Kao, Y. H. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Compaan, A. D. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Grecu, D. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Albin, D. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    2000-06-19

    Angular dependence of x-ray fluorescence and x-ray absorption fine structure techniques have been used to study the diffusion of Cu atoms into the photovoltaic material CdTe. Depth profile, effective valency, and local structure of Cu atoms in a Cu-doped single crystal of CdTe were investigated before and after a second heat treatment. Enhanced Cu diffusion into the CdTe single crystal was observed as a result of heating at a moderate temperature around 200 degree sign C, resulting in a redistribution of the Cu impurities through a broader depth profile. Some of the Cu atoms are believed either to form small complexes with Te or occupy interstitial sites in the host but accompanied by a large local lattice distortion while others substitute for Cd on the cation sites. The results thus demonstrate that these nondestructive x-ray characterization methods are useful for probing microstructural changes in CdTe photovoltaic materials/devices in which some Cu-containing compounds are used as back contacts. (c) 2000 American Institute of Physics.

  13. A direct solution deposition approach to CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Miskin, Caleb K.; Dubois-Camacho, Angela; Reese, Matthew O.; Agrawal, Rakesh

    2016-01-01

    A direct solution deposition approach to CdTe thin films is presented. The difficulty of co-dissolving Te and desirable Cd salts is overcome through a diamine-thiol solvent mixture. Thin films of densely-packed, micron-sized grains are achieved after annealing without the need for chalcogen or CdCl2 vapor treatments.

  14. Three-dimensional defects in CdTe films obtained by pulsed laser deposition

    NARCIS (Netherlands)

    Sagan, P; Virt, IS; Zawislak, J; Rudyj, IO; Kuzma, M

    2004-01-01

    The quality of Cd chalcodenides epitaxial films can be enhanced seriously by applying a pulsed (electron beam or laser beam) method for ablation of targets. The structure of laser deposited CdTe layers was investigated by transmission high energy electron diffraction. This method is very useful for

  15. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    Science.gov (United States)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  16. Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

    Indian Academy of Sciences (India)

    Ziaul Raza Khan; M Zulfequar; Mohd Shahid Khan

    2012-04-01

    Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10-5 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV–VIS–NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1.47–1.50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.

  17. Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices

    Science.gov (United States)

    Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea

    To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.

  18. Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

    2014-07-15

    Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    Energy Technology Data Exchange (ETDEWEB)

    Siepchen, B., E-mail: bastian.siepchen@ctf-solar.com [CTF Solar GmbH, Industriestraße 2, 65779 Kelkheim (Germany); Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M. [CTF Solar GmbH, Industriestraße 2, 65779 Kelkheim (Germany); Bossert, S.; Grimm, M. [Roth and Rau AG, An der Baumschule 6-8, 09337 Hohenstein-Ernstthal (Germany); Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H. [Fraunhofer Institute for Electron Beam and Plasma Technology FEP, Winterbergstrasse 28, 01277 Dresden (Germany)

    2013-05-01

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb{sub 2}Te{sub 3} based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb{sub 2}Te{sub 3} back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section.

  20. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    Science.gov (United States)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  1. Formation of DX-centers in indium doped CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Tuerker, M.; Kronenberg, J.; Deicher, M., E-mail: manfred.deicher@tech-phys.uni-sb.de; Wolf, H.; Wichert, Th. [Universitaet des Saarlandes, Technische Physik (Germany)

    2007-06-15

    In CdTe, the achievable n-type doping is limited by the formation of DX-centers. A characteristic feature of DX-centers is the 'persistent photoconductivity (PPC)' which is created by illumination at low temperatures and caused by a metastable state of the DX-center. The DX-center and the PPC effect in n-type CdTe are theoretically explained by the 'large lattice relaxation model'. PAC measurements on In doped CdTe using {sup 111}In/{sup 111}Cd and, in addition, resistivity measurements on the same samples have been performed. Below 150 K, the samples showed a PPC effect that was accompanied by an increase of about 20% of the carrier concentration. This effect is not accompanied by any changes of the observed EFG. Possible explanations of the EFG observed, originally assigned to the DX-center, will be discussed. Finally, first reports on the investigation of DX-centers in CdTe using the radioactive isotope {sup 117}Cd decaying to {sup 117}In are presented.

  2. Studies of recrystallization of CdTe thin films after CdCl{sub 2} treatment

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Al-Jassim, M.M.; Abulfotuh, F.A.; Levi, D.H.; Dippo, P.C.; Dhere, R.G.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States)

    1997-12-31

    CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl{sub 2} at 350 and 400 C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 C CdCl{sub 2} treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 C were completely recrystallized and grain growth was observed. The formation of Cd(S{sub 1{minus}x}Te{sub x}) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl{sub 2} treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 C, probably due to elimination of deep levels within the band gap.

  3. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires.

    Science.gov (United States)

    Neretina, S; Hughes, R A; Devenyi, G A; Sochinskii, N V; Preston, J S; Mascher, P

    2008-05-07

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires.

  4. Transparent Ohmic Contacts for Solution-Processed, Ultrathin CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; Nanayakkara, Sanjini U.; Pach, Gregory F.; Reese, Matthew O.; Hudson, Margaret H.; Dolzhnikov, Dmitriy S.; Tanygin, Vadim; Luther, Joseph M.; Talapin, Dmitri V.

    2017-01-13

    Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. We used scanning Kelvin probe microscopy to further show how the above approaches improved carrier collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A2CdTe2 (A = Na, K, Cs, N2H5), can be used in conjunction with current/light soaking to improve PCE further.

  5. Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

    Energy Technology Data Exchange (ETDEWEB)

    Hu Fengqin [Key Laboratory of Colloid, Interface Science and Chemical Thermodynamics, Molecular Science Center, Institute of Chemistry, Chinese Academy of Sciences, Zhong Guan Cun, Bei Yi Jie 2, Beijing 100080 (China); Ran Yuliang [Department of Cell and Molecular Biology, Cancer Institute, Chinese Academy of Medical Sciences and Peking Union Medical College, Pan Jia Yuan, Chao Yang Qu, Beijing 100021 (China); Zhou Zhuan [Department of Cell and Molecular Biology, Cancer Institute, Chinese Academy of Medical Sciences and Peking Union Medical College, Pan Jia Yuan, Chao Yang Qu, Beijing 100021 (China); Gao Mingyuan [Key Laboratory of Colloid, Interface Science and Chemical Thermodynamics, Molecular Science Center, Institute of Chemistry, Chinese Academy of Sciences, Zhong Guan Cun, Bei Yi Jie 2, Beijing 100080 (China)

    2006-06-28

    Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection.

  6. D. C. electrical properties of vacuum-deposited CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, S.; Barua, K.

    1982-06-18

    The current-voltage characteristics of vacuum-deposited CdTe films were studied as a function of film thickness (2500-13 000 A) at various temperatures (0-110/sup 0/C). The d.c. conduction mechanism was explained using a modified Poole-Frenkel equation.

  7. A simple and sensitive label-free fluorescence sensing of heparin based on Cdte quantum dots.

    Science.gov (United States)

    Rezaei, B; Shahshahanipour, M; Ensafi, Ali A

    2016-06-01

    A rapid, simple and sensitive label-free fluorescence method was developed for the determination of trace amounts of an important drug, heparin. This new method was based on water-soluble glutathione-capped CdTe quantum dots (CdTe QDs) as the luminescent probe. CdTe QDs were prepared according to the published protocol and the sizes of these nanoparticles were verified through transmission electron microscopy (TEM), X-ray diffraction (XRD) and dynamic light scattering (DLS) with an average particle size of about 7 nm. The fluorescence intensity of glutathione-capped CdTe QDs increased with increasing heparin concentration. These changes were followed as the analytical signal. Effective variables such as pH, QD concentration and incubation time were optimized. At the optimum conditions, with this optical method, heparin could be measured within the range 10.0-200.0 ng mL(-1) with a low limit of detection, 2.0 ng mL(-1) . The constructed fluorescence sensor was also applied successfully for the determination of heparin in human serum. Copyright © 2015 John Wiley & Sons, Ltd.

  8. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  9. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    Science.gov (United States)

    Harayama, Atsushi; Takeda, Shin`ichiro; Sato, Goro; Ikeda, Hirokazu; Watanabe, Shin; Takahashi, Tadayuki

    2014-11-01

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35 μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of 500 e- and a noise slope of 5 e-/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as 12 keV (FWHM) at 662 keV and 24 keV (FWHM) at 1.33 MeV.

  10. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    Energy Technology Data Exchange (ETDEWEB)

    Harayama, Atsushi, E-mail: harayama@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan); Takeda, Shin' ichiro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan); Sato, Goro [RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan); Ikeda, Hirokazu; Watanabe, Shin; Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan)

    2014-11-21

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of ∼500 e{sup −} and a noise slope of ∼5 e{sup −}/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as ∼12 keV (FWHM) at 662 keV and ∼24 keV (FWHM) at 1.33 MeV.

  11. Chromatic X-Ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC

    CERN Document Server

    Bellazzini, R; Brez, A; Minuti, M; Pinchera, M; Mozzo, P

    2012-01-01

    An innovative X-ray imaging sensor with intrinsic digital characteristics is presented. It is based on Chromatic Photon Counting technology. The detector is able to count individually the incident X-ray photons and to separate them according to their energy (two 'color' images per exposure). The energy selection occurs in real time and at radiographic imaging speed (GHz global counting rate). Photon counting, color mode and a very high spatial resolution (more than 10 l.p./mm at MTF50) allow to obtain an optimal ratio between image quality and absorbed dose. The individual block of the imaging system is a two-side buttable semiconductor radiation detector made of a thin pixellated CdTe crystal (the sensor) coupled to a large area VLSI CMOS pixel ASIC. 1, 2, 4, 8 tile units have been built. The 8 tiles unit has 25cm x 2.5cm sensitive area. Results and images obtained from in depth testing of several configurations of the system are presented. The X-Ray imaging system is the technological platform of PIXIRAD Im...

  12. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  13. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  14. Highly luminescent mono- and multilayers of immobilized CdTe nanocrystals: controlling optical properties through post chemical surface modification.

    Science.gov (United States)

    Tsuruoka, Takaaki; Takahashi, Rena; Nakamura, Toshihiro; Fujii, Minoru; Akamatsu, Kensuke; Nawafune, Hidemi

    2008-04-14

    The significant fluorescence enhancement of immobilized CdTe nanocrystals through chemical surface modifications is described, enabling us to fabricate stable, highly luminescent thin films and patterns of nanocrystal mono- and mutilayers.

  15. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Science.gov (United States)

    Araghi, Houshang; Zabihi, Zabiholah; Nayebi, Payman; Ehsani, Mohammad Mahdi

    2016-10-01

    II-VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  16. Influence of Kilo-Electron Oxygen Ion Irradiation on Structural, Electrical and Optical Properties of CdTe Thin Films

    Science.gov (United States)

    Honey, Shehla; Thema, F. T.; Bhatti, M. T.; Ishaq, A.; Naseem, Shahzad; Maaza, M.

    2016-09-01

    In this paper, effect of oxygen (O+) ion irradiation on the properties of polycrystalline cubic structure CdTe thin films has been investigated. CdTe thin films were irradiated with O+ ions of energy 80keV at different fluence ranging from 1×1015 to 5×1016 ion/cm2 at room temperature. At 1×1015 ion/cm2 O+ ions fluence, the CdTe structure was maintained while XRD peaks of cubic phase were shifted toward lower angles. At 5×1016 ion/cm2 O+ ions fluence, cubic structure of CdTe thin films was transformed into hexagonal structure. In addition, electrical resistivity and optical bandgap were decreased with increasing O+ ion beam irradiation.

  17. Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale

    Science.gov (United States)

    Bai, Zhizhong; Yang, Jun; Wang, Deliang

    2011-10-01

    CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9% was obtained for a 1-μm-thick CdTe solar cell. An increased intensity of deep recombination states in the band gap, which was responsible for the reduced open-circuit voltage and fill factor for ultra-thin solar cells, was induced due to the not-well-developed polycrystalline CdTe microstructure and the CdS/CdTe heterojunction and the presence of Cu in the back contact. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency.

  18. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  19. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  20. CLIC Detector Power Requirements

    CERN Document Server

    Gaddi, A

    2013-01-01

    An estimate for the CLIC detector power requirements is outlined starting from the available data on power consumptions of the four LHC experiments and considering the differences between a typical LHC Detector (CMS) and the CLIC baseline detector concept. In particular the impact of the power pulsing scheme for the CLIC Detector electronics on the overall detector consumption is considered. The document will be updated with the requirements of the sub-detector electronics once they are more defined.

  1. Pixel Vertex Detectors

    OpenAIRE

    Wermes, Norbert

    2006-01-01

    Pixel vertex detectors are THE instrument of choice for the tracking of charged particles close to the interaction point at the LHC. Hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the present state of the art in detector technology. Three of the LHC detectors use vertex detectors based on this technology. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as ...

  2. Hydrothermal synthesis of CdTe QDs: Their luminescence quenching in the presence of bio-molecules and observation of bistable memory effect in CdTe QD/PEDOT:PSS heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Khatei, Jayakrishna [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Koteswara Rao, K.S.R., E-mail: ksrkrao@physics.iisc.ernet.in [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

    2011-10-17

    Highlights: {center_dot} CdTe QD has been prepared by modified hydrothermal method in room ambient. {center_dot} Luminescence quenching of CdTe QDs in the presence of bio-molecules demonstrated. {center_dot} The CdTe QDs shows memory effect (electrical bistability). - Abstract: We report one-pot hydrothermal synthesis of nearly mono-disperse 3-mercaptopropionic acid capped water-soluble cadmium telluride (CdTe) quantum dots (QDs) using an air stable Te source. The optical and electrical characteristics were also studied here. It was shown that the hydrothermal synthesis could be tuned to synthesize nano structures of uniform size close to nanometers. The emissions of the CdTe QDs thus synthesized were in the range of 500-700 nm by varying the duration of synthesis. The full width at half maximum (FWHM) of the emission peaks is relatively narrow (40-90 nm), which indicates a nearly uniform distribution of QD size. The structural and optical properties of the QDs were characterized by transmission electron microscopy (TEM), photoluminescence (PL) and Ultraviolet-visible (UV-Vis) spectroscopy. The photoluminescence quenching of CdTe QDs in the presence of L-cysteine and DNA confirms its biocompatibility and its utility for biosensing applications. The room temperature current-voltage characteristics of QD film on ITO coated glass substrate show an electrically induced switching between states with high and low conductivities. The phenomenon is explained on the basis of charge confinement in quantum dots.

  3. Kardar-Parisi-Zhang universality, anomalous scaling and crossover efects in the growth of CdTe thin films

    OpenAIRE

    Almeida, Renan Augusto Lisbôa

    2015-01-01

    A relation between the mound evolution and large-wavelength fluctuations at CdTe surface has been established. One finds that short-length scales are dictated by an interplay between the effects of the for- mation of defects at colided boundaries of neighboring grains and a relaxation process which stems from the diffusion and deposition of particles (CdTe molecules) torward these regions. A Kinetic Monte Carlo model corroborates these reasonings. As T is increased, that competition gives ris...

  4. Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States); Varga, Tamas [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

    2013-11-15

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 Å while ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an √2 × √2 R45° configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.0–2.2 eV) matched well with the predicted value.

  5. Band offsets for mismatched interfaces. The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kaspar, Tiffany C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Droubay, Timothy C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Varga, Tamas [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-08-02

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° √2 x √2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

  6. 3D Lifetime Tomography Reveals How CdCl 2 Improves Recombination Throughout CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, Edward S. [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA; PLANT PV, Inc, Alameda CA 94501 USA; Ursprung, Benedikt [PLANT PV, Inc, Alameda CA 94501 USA; Colegrove, Eric [National Renewable Energy Laboratory, Golden CO 80401 USA; Moutinho, Helio R. [National Renewable Energy Laboratory, Golden CO 80401 USA; Borys, Nicholas J. [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA; Hardin, Brian E. [PLANT PV, Inc, Alameda CA 94501 USA; Peters, Craig H. [PLANT PV, Inc, Alameda CA 94501 USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, Golden CO 80401 USA; Schuck, P. James [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA

    2016-11-15

    Using two-photon tomography, carrier lifetimes are mapped in polycrystalline CdTe photovoltaic devices. These 3D maps probe subsurface carrier dynamics that are inaccessible with traditional optical techniques. They reveal that CdCl2 treatment of CdTe solar cells suppresses nonradiative recombination and enhances carrier lifetimes throughout the film with substantial improvements particularly near subsurface grain boundaries and the critical buried p-n junction.

  7. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  8. Simultane Untersuchung der Diffusion von intrinsischen und extrinsischen Defekten in CdTe mittels ortsaufgelöster Photolumineszenzspektroskopie

    OpenAIRE

    2013-01-01

    Die vorliegende Arbeit beschäftigt sich mit der Untersuchung von Diffusionsphänomenen in CdTe. Radiotracerexperimente, bei denen mit Gruppe-I-Elementen dotiertes CdTe unter Cd-Dampfdruck getempert wurde, ergaben Konzentrationsprofile, welche die Diffusion der Fremdatome gegen ihren Konzentrationsgradienten voraussetzen (Uphill-Diffusion). In früheren Arbeiten wurde ein Modell entwickelt, das diese Konzentrationsprofile quantitativ mit der Diffusion der intrinsischen Defekte des Cd-Untergitter...

  9. Interface Characterization of Single-Crystal CdTe Solar Cells With VOC > 950 mV

    Energy Technology Data Exchange (ETDEWEB)

    Burst, James M.; Duenow, Joel N.; Kanevce, Ana; Moutinho, Helio R.; Jiang, Chun Sheng; Al-Jassim, Mowafak M.; Reese, Matthew Owen; Albin, David S.; Aguiar, Jeffrey A.; Colegrove, Eric; Ablekim, Tursun; Swain, Santosh K.; Lynn, Kelvin G.; Kuciauskas, Darius; Barnes, Teresa M.; Metzger, Wyatt K.

    2016-11-01

    Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

  10. Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2007-04-01

    The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

  11. Semiconductor nanowires self-assembled from colloidal CdTe nanocrystal building blocks: optical properties and application perspectives

    OpenAIRE

    RAKOVICH, YURY; DONEGAN, JOHN FRANCIS

    2012-01-01

    PUBLISHED Solution-based self-assembly of quasi-one-dimensional semiconductor nanostructures (nanowires) from quasi-zero-dimensional (quantum dots) colloidal nanocrystal building blocks has proven itself as a powerful and flexible preparation technique. Polycrystalline CdTe nanowires self-assembled from light-emitting thiol-capped CdTe nanocrystals are the focus of this Feature Article. These nanowires represent an interesting model system for quantum dot solids, where electronic coupling ...

  12. Semiconductor nanowires self-assembled from colloidal CdTe nanocrystal building blocks: optical properties and application perspectives

    OpenAIRE

    Rakovich, Yury P.; Jäckel, Frank; Donegan, John F.; Rogach, Andrey L

    2012-01-01

    Solution-based self-assembly of quasi-one-dimensional semiconductor nanostructures (nanowires) from quasi-zero-dimensional (quantum dots) colloidal nanocrystal building blocks has proven itself as a powerful and flexible preparation technique. Polycrystalline CdTe nanowires self-assembled from light-emitting thiol-capped CdTe nanocrystals are the focus of this Feature Article. These nanowires represent an interesting model system for quantum dot solids, where electronic coupling between the i...

  13. Evaluation of toxic effects of CdTe quantum dots on the reproductive system in adult male mice.

    Science.gov (United States)

    Li, Xiaohui; Yang, Xiangrong; Yuwen, Lihui; Yang, Wenjing; Weng, Lixing; Teng, Zhaogang; Wang, Lianhui

    2016-07-01

    Fluorescent quantum dots (QDs) are highly promising nanomaterials for various biological and biomedical applications because of their unique optical properties, such as robust photostability, strong photoluminescence, and size-tunable fluorescence. Several studies have reported the in vivo toxicity of QDs, but their effects on the male reproduction system have not been examined. In this study, we investigated the reproductive toxicity of cadmium telluride (CdTe) QDs at a high dose of 2.0 nmol per mouse and a low dose of 0.2 nmol per mouse. Body weight measurements demonstrated there was no overt toxicity for both dose at day 90 after exposure, but the high dose CdTe affected body weight up to 15 days after exposure. CdTe QDs accumulated in the testes and damaged the tissue structure for both doses on day 90. Meanwhile, either of two CdTe QDs treatments did not significantly affect the quantity of sperm, but the high dose CdTe significantly decreased the quality of sperm on day 60. The serum levels of three major sex hormones were also perturbed by CdTe QDs treatment. However, the pregnancy rate and delivery success of female mice that mated with the treated male mice did not differ from those mated with untreated male mice. These results suggest that CdTe QDs can cause testes toxicity in a dose-dependent manner. The low dose of CdTe QDs is relatively safe for the reproductive system of male mice. Our preliminary result enables better understanding of the reproductive toxicity induced by cadmium-containing QDs and provides insight into the safe use of these nanoparticles in biological and environmental systems.

  14. Solution-Processed, Ultrathin Solar Cells from CdCl3(-)-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3(-) Ligands.

    Science.gov (United States)

    Zhang, Hao; Kurley, J Matthew; Russell, Jake C; Jang, Jaeyoung; Talapin, Dmitri V

    2016-06-22

    Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer.

  15. MUON DETECTOR

    CERN Multimedia

    F. Gasparini

    DT As announced in the previous Bulletin MU DT completed the installation of the vertical chambers of barrel wheels 0, +1 and +2. 242 DT and RPC stations are now installed in the negative barrel wheels. The missing 8 (4 in YB-1 and 4 in YB-2) chambers can be installed only after the lowering of the two wheels into the UX cavern, which is planned for the last quarter of the year. Cabling on the surface of the negative wheels was finished in May after some difficulties with RPC cables. The next step was to begin the final commissioning of the wheels with the final trigger and readout electronics. Priority was giv¬en to YB0 in order to check everything before the chambers were covered by cables and services of the inner detectors. Commissioning is not easy since it requires both activity on the central and positive wheels underground, as well as on the negative wheels still on the surface. The DT community is requested to commission the negative wheels on surface to cope with a possible lack of time a...

  16. Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

    Directory of Open Access Journals (Sweden)

    Juan P Monrás

    Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

  17. First Principle Calculation for the Electronic Bands and Absorption of CdTe1-xSbx

    Institute of Scientific and Technical Information of China (English)

    WANG Long; HUANG Zheng; MA Huan-feng; QIANG Wei-rong; PAN Min

    2010-01-01

    The lattice parameters for the derivatives of cadmium telluride, CdTe1-xSbx, with the zinc blend crystal structure are calculated using the generalized gradient approximation method; which is based on the density functional theory (DFT). The effects of antimony (Sb) on the lattices, electric bands, electronic state density, absorption spectroscopy, and band gap between the valence band maximum (VBM) and the conduction band minimum (CBM) of CdTe1-xSbx are discussed. The results show that the antimonic atoms in the lattice are advantageous in promoting the hole concentration and conductivities of CdTe1-xSbx. The increase of the Sb content in CdTe1-xSbx reduces the interaction among Cd, Te, and Sb; resulting in a decreased binding energy within CdTe1-xSbx as well as an increase in the electronic gap. Also discussed are the mechanics for the lattice phase change of CdTe1-xSbx at x=0.5.

  18. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    Directory of Open Access Journals (Sweden)

    Songbai Hu

    2011-12-01

    Full Text Available Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries diffuse deeply in the CdTe layer, and more photogenerated electrons and holes are separated by the segregated SbCd+ donors into the GBs. What is more, the doping concentration in the vicinity of the CdTe/CdS heterojunction increases for the formation of substitutional SbTe- acceptors under the Cd-rich conditions. For the introduction of the p-type Sb2Te3 layers as the back contact to the CdTe thin film solar cells, the performance of CdTe thin film solar cells has been greatly improved and an efficiency of 13.1% (FF=62.3%, Jsc=25.8 mA/cm2, Voc= 815.8 mV obtained.

  19. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  20. The study of properties of CdTe thin films deposited in Ar/O{{2}} atmosphere

    Science.gov (United States)

    Li, Y.; Li, B.; Feng, L.; Zheng, J.; Li, W.

    2009-02-01

    The preparation and properties of CdTe thin films is of a primary interest for the CdTe thin film solar cells in both research and technology. In our work, polycrystalline CdTe thin films were deposited on pretreated glass substrates in Ar/O{2} atmosphere by closed-space sublimation (CSS) technology. Structural property was studied by X-ray diffraction (XRD), surface morphology was observed by scanning electron microscopy (SEM). The optical and electrical properties of CdTe films were investigated, as well as the effects of deposition temperatures, the ratio of gas (Ar/O{2}) and post-treatment on the properties. The high quality CdTe layer was prepared based on the above studies. These layers were used to prepared CdS/CdTe/ZnTe:Cu solar cells. Efficiency of 13.38% and fill factor of 70.3% (0.501 cm2 area) for CdTe solar cells have been achieved. Project supported by the National High Technology Research and Development Program of China (Grant No.2003AA513010) and the National Natural Science Foundation of China (Grant No.60506004).

  1. Effect of Cadion 1B on the Spectrum of Mercaptoacetic Acid-stabilized CdTe Quantum Dots

    Institute of Scientific and Technical Information of China (English)

    WEN Li-Qun; ZHOU Xing-Wang; L(U) Jian-Quan

    2008-01-01

    The effect of cadion 1B (4-nitro-benzene-diazo-amino-azobenzene) on the fluorescent and absorption spectros- copy of mercaptoacetic acid-stabilized CdTe quantum dots (CdTe QD) in aqueous media was studied. Surfactant, medium, dosages of the cadion 1B, pH and thermodynamics parameters were also examined. The experimental re-sults showed that when cadion 1B was added into the CdTe QD solution, a new absorption peak was observed, and the fluorescence of CdTe QD was quenched to some extent, suggesting that there exist an interaction between cadion 1B and CdTe QD. The apparent equilibrium constant at room temperature was calculated to be 1.095×106 L·mol-1, and the coverage ratio of cadion IB on the surface of CdTe QD was estimated as 45%. Thermodynamic calculations revealed that the interaction was a spontaneous process in which electrostatic interactions play a major role.

  2. Evaluation of the response of thermoluminescent detectors in clinical beams dosimetry using different phantoms; Avaliacao da resposta de detectores termoluminescentes na dosimetria de feixes clinicos utilizando diferentes objetos simuladores

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Luciana Cardoso

    2010-07-01

    Radiotherapy is one of the three principal treatment modalities used in the treatment of malignant diseases such as cancer, the other two are chemotherapy and radiosurgery. In contrast to other medical specialties that rely mainly on the clinical knowledge and experience of medical specialists, radiotherapy, with its use of ionizing radiation in treatment of cancer, relies heavily on modern technology and the collaborative efforts of several professionals whose coordinated team approach greatly influences the outcome of the treatment. In the area of clinical dosimetry, an efficient and accurate calibration of the radiation beam ensures knowledge of the radiation dose delivered to the patient, allowing thus the success of radiotherapy. This study aims to compare the thermoluminescent response of calcium sulfate doped with dysprosium (CaSO{sub 4}:Dy) dosimeters produced by IPEN (6 mm in diameter and 0,8 mm tick) with the response of lithium fluoride (3,15 x 3,15 x 0,9 mm{sup 3}) doped with magnesium and titanium (LiF:Mg,Ti) in dosimetry of clinical photons (6 and 15 MV) and electrons beams (6 and 9 MeV) using solid water (RMI-457), water and PMMA phantoms. Initially, the dose-response curves were obtained for irradiation in cobalt-60 gamma radiation source in air (PMMA plates) and under electronic equilibrium conditions and for clinical electrons and photons beams at depth of maximum dose. The sensitivities of the thermoluminescent dosimeters were also evaluated and the values of their reproducibilities and intrinsic efficiency were determined for the response to different types of phantoms and radiation energy. The obtained results indicate that the main advantage of CaSO{sub 4}:Dy dosimeters is the enhanced sensitivity to radiation doses measured for {sup 60}Co, photons and electrons beams, thus representing a viable alternative for application in dosimetry in the radiotherapy area. (author)

  3. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    Directory of Open Access Journals (Sweden)

    Shi Lixin

    2011-01-01

    Full Text Available Abstract Cadmium telluride quantum dots (Cdte QDs have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  4. The study of response of wide band gap semiconductor detectors using the Geant4

    Directory of Open Access Journals (Sweden)

    Hussain Riaz

    2014-01-01

    Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

  5. MBE HgCdTe heterostructure detectors

    Science.gov (United States)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  6. A TEM investigation of the lattice defects and exfoliation in hydrogen-implanted CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Berndt, P.R. [Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6001 (South Africa)]. E-mail: pearl.berndt@upe.ac.za; Neethling, J.H. [Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6001 (South Africa); Franklyn, C.B. [Radiation Utilisation Group, Nuclear Technology Department, NECSA, Pretoria (South Africa); Zandbergen, H.W. [National Centre for HREM, Delft University of Technology, Delft (Netherlands)

    2004-11-15

    This study focuses on characterizing the defects associated with 400 keV hydrogen-implantation of CdTe, at a dose of 1 x 10{sup 16} H{sup +} cm{sup -2} to 5 x 10{sup 16} H{sup +} cm{sup -2}, with subsequent annealing. Transmission electron microscopy (TEM) and a hybrid diffraction technique, large-angle convergent-beam electron diffraction (LACBED), were used in the characterization process. Extended defects resulting from the hydrogen-implantation and annealing process include dislocations, microcracks and bubbles. Microcrack and bubble formation occurs on the cleavage planes of CdTe. Exfoliation is achieved at the higher implantation dose. High-resolution electron microscopy was used in the microstructural analysis of the microcracks. LACBED of the implanted material containing bubbles revealed a highly strained lattice with evidence of lattice distortion in-plane and in the direction of implantation.

  7. Studies on the grain boundary effect in polycrystalline CdTe films using optical reflectance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, J. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India)); Pal, R. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India)); Bhattacharyya, S.K. (Central Glass and Ceramic Research Inst., Calcutta (India)); Chaudhuri, S. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India)); Pal, A.K. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India))

    1993-11-15

    The grain boundary effect in polycrystalline CdTe films deposited at various substrate temperatures has been studied critically. The grain boundary potential, the density of trap states at the boundary region and the carrier concentration in the films were obtained by an alternative technique that utilizes the reflectance measurements of the highly resistive films deposited on a nonabsorbing substrate. The barrier height in the CdTe films decreased from 0.34 to 0.2 eV as the grain size increased from 60 to 133 nm, owing to the increase in the deposition temperature from 373 to 523 K. Correspondingly, the density of trap states in the grain boundary region decreased from 1.63x10[sup 13] to 6.15x10[sup 12] cm[sup -2]. (orig.)

  8. Thermoelectric power and Hall effect measurements in polycrystalline CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Paez, B.A. [Pontificia Univ. Javeriana, Santafe de Bogota (Colombia). Thin Films Group

    2000-07-01

    Polycrystalline CdTe thin films deposited by close space sublimation (CSS), were characterized through thermoelectric power, {alpha}, Hall coefficient, and resistivity, {rho}, measurements in the range of 90 to 400 K. This was in order to determine the scattering mechanisms which mainly affect the electrical transport properties in CdTe thin films. The results were analyzed based on theoretical calculations of {alpha} against temperature. This model includes scattering processes within the grains and at the grain boundaries. Some of the parameters used in this calculation were determined experimentally: grain size, crystal structure, activation energy and effective mass. It is important to state that the main approximations were justified according to experimental measurements. (orig.)

  9. Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Chun-Sheng; To, Bobby; Glynn, Stephen; Mahabaduge, Hasitha; Barnes, Teresa; Al-Jassim, Mowafak M.

    2016-11-21

    We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

  10. Identification of critical stacking faults in thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  11. CdTe quantum dot as a fluorescence probe for vitamin B12 in dosage form

    Science.gov (United States)

    Vaishnavi, E.; Renganathan, R.

    2013-11-01

    We here report the CdTe quantum dot (CdTe QDs)-based sensor for probing vitamin B12 derivatives in aqueous solution. In this paper, simple and sensitive fluorescence quenching measurements has been employed. The Stern-Volmer constant (KSV), quenching rate constant (kq) and binding constant (K) were rationalized from fluorescence quenching measurement. Furthermore, the fluorescence resonance energy transfer (FRET) mechanism was discussed. This method was applicable over the concentration ranging from 1 to 14 μg/mL (VB12) with correlation coefficient of 0.993. The limit of detection (LOD) of VB12 was found to be 0.15 μg/mL. Moreover, the present approach opens a simple pathway for developing cost-effective, sensitive and selective QD-based fluorescence sensors/probes for biologically significant VB12 in pharmaceutical sample with mean recoveries in the range of 100-102.1%.

  12. Photoinduced interaction between MPA capped CdTe QDs and certain anthraquinone dyes

    Energy Technology Data Exchange (ETDEWEB)

    Jagadeeswari, S.; Asha Jhonsi, M.; Kathiravan, A. [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Renganathan, R., E-mail: rrengas@gmail.co [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2011-04-15

    Photoinduced interaction of mercapto propionic acid (MPA) capped CdTe quantum dots (QDs) with certain anthraquinone dyes namely alizarin, alizarin red S, acid blue 129 and uniblue has been studied by steady state and time resolved fluorescence measurements. Addition of anthraquinone dyes to CdTe QDs results in the reduction of electron hole recombination has been observed (i.e., fluorescence quenching). The Stern-Volmer constant (K{sub SV}), quenching rate constant (k{sub q}) and association constants (K) were obtained from fluorescence quenching data. The interaction of anthraquinone dyes with QDs occurs through static quenching was confirmed by unaltered fluorescence lifetime. The occurrence of electron transfer quenching mechanism has been proved by the negative free energy change ({Delta}G{sub et}) obtained as per the Rehm-Weller equation.

  13. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  14. [Spectral analysis of the effect of annealing on CdTe polycrystalline film].

    Science.gov (United States)

    Wang, Wen-Wu; Zheng, Jia-Gui; Feng, Liang-Huan; Cai, Ya-Ping; Lei, Zhi; Zhang, Jing-Quan; Li, Bing; Li, Wei; Wu, Li-Li

    2010-03-01

    Polycrystalline CdTe thin films were prepared by close-spaced sublimation (CCS) and were annealed in different condition. The thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy(XPS). The content distribution and valence state of all elements after annealing were studied. All results show that the as-deposited CdTe thin films are in a cubic phase and have the preferred orientation in (111) direction. After annealing, the peak intensity of (111), (220), (311) grows and the crystal grains grow up, while the crystal boundary decreases. So the compound probabilities of current carrier decrease, therefore shunt resistance and drain current are improved. From detailed analysis of X-ray photoelectron data, it is proposed that tellurium oxides present and its content reduces with depth increasing and that there are TeCl2O building blocks.

  15. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  16. Structural phase transition of CdTe: an ab initio study.

    Science.gov (United States)

    Alptekin, Sebahaddin

    2013-01-01

    A constant pressure ab initio MD technique and density functional theory with a generalized gradient approximation (GGA) was used to study the pressure-induced phase transition in zinc-blende CdTe. We found that CdTe undergoes a structural first-order phase transition to [Formula: see text] (binary β-tin) tetragonal structure in the constant pressure molecular dynamics simulation at 20 GPa. When the pressure was increased to 50 GPa, the phase of tetragonal structure converted to a new Imm2 orthorhombic structure. These phase transformations were also calculated by using the enthalpy calculations. Transition phases, lattice parameters and bulk properties we attained are comparable with experimental and theoretical data.

  17. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Pradip Kumar Kalita

    2003-06-01

    The temperature dependence of dc photoconductivity in the measuring range 303–417 K has been studied in CdTe thin films having thickness < 4000 Å. The photoactivation energy decreases in dark which is explained on the basis of grain boundary (GB) effect. The current lost to recombination at GB space charge region causes a negative effect on the photosensitivity of the films. A decrease in photosensitivity with increase in temperature is attributed to the reduction of photoexcitation process. It is observed that the minority carrier lifetime varies inversely with light intensity which supports the sublinear relationship of photoconductivity with the intensity of light and thereby confirms the defect-controlled photoconductivity in CdTe thin films.

  18. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    OpenAIRE

    Matin, M.A.; Tomal, M. U.; A. M. Robin; N. Amin

    2013-01-01

    This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF) using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures). A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF ...

  19. Redetermination of Ba2CdTe3 from single-crystal X-ray data

    Directory of Open Access Journals (Sweden)

    Min Yang

    2012-10-01

    Full Text Available The previous structure determination of the title compound, dibarium tritelluridocadmate, was based on powder X-ray diffraction data [Wang & DiSalvo (1999. J. Solid State Chem. 148, 464–467]. In the current redetermination from single-crystal X-ray data, all atoms were refined with anisotropic displacement parameters. The previous structure report is generally confirmed, but with some differences in bond lengths. Ba2CdTe3 is isotypic with Ba2MX3 (M = Mn, Cd; X = S, Se and features 1∞[CdTe2/2Te2/1]4− chains of corner-sharing CdTe4 tetrahedra running parallel [010]. The two Ba2+ cations are located between the chains, both within distorted monocapped trigonal–prismatic coordination polyhedra. All atoms in the structure are located on a mirror plane.

  20. Micro through nanostructure investigations of polycrystalline CdTe: Correlations with processing and electronic structures

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Moutinho, H.R.; Hasoon, F.A.; Keyes, B.M.; Ahrenkiel, R.K.; Al-Jassim, M.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States); Birkmire, R.W. [Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion

    1994-12-31

    This paper provides first-time correlations of the nanoscale physical structure with the macroscale electronic and optical properties of CdTe/CdS thin films for several standard deposition techniques. Atomic force microscopy (AFM) was used to determine the micro and nanostructures of polycrystalline CdTe thin films used in photovoltaic (PV) cell fabrication. Photoluminescence (PL) was used to determine band gap, relative defect density, and photoexcited carrier lifetime. Nanostructural features (nanograins), beyond the spatial resolution of conventional scanning electron microscopy (SEM), were observed and characterized in as-deposited CdTe. The correlations of the proximal probe measurements of the physical structure with the optically determined electronic properties were used to show the effects of the chemical and heat processing, directly and conclusively. A particularly striking effect with important implications for PV applications is the diffusion of sulfur across the CdTe/CdS interface during heat treatment.

  1. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States); Mayo, B. [Southern University and AM College, Harding Boulevard, Baton Rouge, Louisiana 70813 (United States)

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350&hthinsp;{degree}C and completely recrystallized after the same treatment at 400&hthinsp;{degree}C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures. {copyright} {ital 1999 American Institute of Physics.}

  2. Analyses of photoluminescence spectra of CdTe thin films at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad-Bitar, R. [University of Jordan, Amman (Jordan); Moutinho, H.; Abulfotuh, F.; Kazmerski, L. [Solar Energy Research Inst., Golden, CO (United States)

    1995-11-01

    Photoluminescence (PL) spectra of thin films of CdTe grown on glass by evaporation have been obtained at different laser powers and at different temperatures near and to the red end of the band gap. We suggest an analytical method which deconvolutes the PL spectrum into peaks corresponding to the main electronic transitions. Each spectrum was analytically fitted to eight Gaussian peaks. Gaussian peaks have been found to give the best fit to the spectrum. The quality of the fit can be checked by the fact that the positions and the widths of the eight peaks of each PL spectrum should agree with the fit to another spectrum taken at a different excitation power or a different sample temperature. These results may help to identify these peaks and suggest a model for the shallow electrically active states between the conduction and valance bands of CdTe thin films. (Author)

  3. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  4. Identification of Ag-acceptor related photoluminescence in $^{111}\\!$Ag doped CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Ostheimer, V; Schmitz, C; Wolf, H; Wichert, T

    1998-01-01

    Bridgman-grown, nominally undoped CdTe crystals were doped with Ag by implanting radioactive $^{111}\\!$Ag. Photoluminescence spectra of the crystals show a donor-acceptor pair (DAP) line at 1.491 eV. The decrease of the intensity of this line with a half life of T$_{1/2}$=(7.2$\\pm$0.4) d is in good agreement with the half life of the $\\beta\\!^{-}$-decay of $^{111}\\!$Ag to $^{111}\\!$Cd of 7.45 d. This decrease is not caused by the aging behavior of Ag which was reported in the literature. The data show that the involved acceptor defect contains exactly one Ag atom and confirm the earlier assignment of the acceptor to the AgCd defect. Based on the DAP line at 1.491 eV, the spectra did not reveal a contamination of the CdTe crystals by stable Ag.

  5. CdTe and ZnTe metal interface formation and Fermi-level pinning

    Science.gov (United States)

    Wahi, A. K.; Carey, G. P.; Chiang, T. T.; Lindau, I.; Spicer, W. E.

    1989-01-01

    Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

  6. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  7. Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, Joel N.; Burst, James M.; Albin, David S.; Reese, Matthew O.; Jensen, Soren A.; Johnston, Steven W.; Kuciauskas, Darius; Swain, Santosh K.; Ablekim, Tursun; Lynn, Kelvin G.; Fahrenbruch, Alan L.; Metzger, Wyatt K.

    2016-11-01

    We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

  8. In-depth analysis of chloride treatments for thin-film CdTe solar cells

    OpenAIRE

    Major, J.D.; Al Turkestani, M.; Bowen, L; Brossard, M.; Li, C; Lagoudakis, P.; S. J. Pennycook; Phillips, L. J.; Treharne, R. E.; Durose, K.

    2016-01-01

    CdTe thin-film solar cells are now the main industrially established alternative to silicon-based photovoltaics. These cells remain reliant on the so-called chloride activation step in order to achieve high conversion efficiencies. Here, by comparison of effective and ineffective chloride treatments, we show the main role of the chloride process to be the modification of grain boundaries through chlorine accumulation, which leads an increase in the carrier lifetime. It is also demonstrated th...

  9. Shape-controlled assembly of luminescent dumbbell-like CdTe cystine nanocomposites

    Science.gov (United States)

    Bao, Haifeng; Cui, Xiaoqiang; Li, Chang Ming; Zang, Jianfeng

    2007-11-01

    A shape perfect luminescent dumbbell with size up to several microns was prepared by incorporating CdTe quantum dots (QDs) into locally created L-cystine matrices, and the photoluminescence of the shaped dumbbells can be easily tailored by reaction time. The growth mechanism was thoroughly investigated. This work not only gives a potential application in optical devices, but also gives a deep insight on the assembly mechanism of nanomaterials into micron-size objects.

  10. Cytotoxicity and DNA Damage Effect of TGA-capped CdTe Quantum Dots

    Institute of Scientific and Technical Information of China (English)

    LI Yan-bo; ZHANG Hai-xia; GUO Cai-xia; HU Gui-qin; DU Hai-ying; JIN Ming-hua; HUANG Pei-li; SUN Zhi-wei; YANG Wen-sheng

    2012-01-01

    The cytotoxicity and DNA damage caused by thioglycolic acid(TGA)-capped cadmium telluride(CdTe)quantum dots(QDs)to hepatocyte line HL-7702 were investigated.Cell viability was measured by 3-(4,5-dimethyl-thiazol-2-yl)-2,5-diphenyltetrazolium bromide(MTT)assay; DNA damage was detected by single cell gel electrophoresis(SCGE); the change of cell cycle progression was examined by propidium iodide(PI)-flow cytometry(FCM);apoptosis was measured by acridine orange/ethidium bromide(AO/EB)assay and Annexin V-FITC/PI-FCM(FITC:fluorescein isothiocyanate).The results show that the cytotoxicity induced by CdTe QDs was increased in a dose-dependent and time-dependent manner; after exposure to QDs for 24 h,as the exposure dose increased,the rate of DNA damage was significantly increased(P<0.05),and the degree of DNA damage was elevated.As the dose of CdTe QDs increased,the percentage of G0/G1 phase cells was significantly decreased(P<0.001),while the percenttages of S and G2/M phases cells were significantly increased(P<0.001).In AO/EB assay,apoptotic cells could be observed under a fluorescence microscope,and apoptotic rate was increased as exposure dose increased.In Annexin V-FITC/PI-FCM assay,the apoptotic rates of CdTe QDs treated groups were significantly increased compared with that of control group(P<0.05).Our studies indicate that CdTe QDs could influence cell viability,and induce DNA damage,the S and G2/M phases arrest and apoptosis of HL-7702.

  11. Anomalous scaling and super-roughness in the growth of CdTe polycrystalline films

    OpenAIRE

    Mata, Angélica S.; Ferreira, Jr,Augusto; Ribeiro, Igor R. B.; Ferreira, Sukarno O.

    2011-01-01

    CdTe films grown on glass substrates covered by fluorine doped tin oxide by Hot Wall Epitaxy (HWE) were studied through the interface dynamical scaling theory. Direct measures of the dynamical exponent revealed an intrinsically anomalous scaling characterized by a global roughness exponent $\\alpha$ distinct from the local one (the Hurst exponent $H$), previously reported [Ferreira \\textit{et al}., Appl. Phys. Lett. \\textbf{88}, 244103 (2006)]. A variety of scaling behaviors was obtained with ...

  12. Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films

    OpenAIRE

    Takahashi, Makoto; Uosaki, Kohei; Kita, Hideaki; Yamaguchi, Shoji

    1986-01-01

    The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with t...

  13. A TEM and DLTS study of a near. Sigma. 25 CdTe bicrystal

    Energy Technology Data Exchange (ETDEWEB)

    Wang, N.; Haasen, P. (Inst. fuer Metallphysik, Univ. Goettingen (Germany))

    1991-11-16

    Cadmium precipitates are observed at the grain boundary (GB) of a CdTe bicrystal by means of transmission electron microscopy (TEM). In a simple model based on the theory of electron hopping, electrons can be excited by thermal activation and flow from boundary states to precipitates in the boundary. This model gives, in particular, a simple explanation for the emission properties of the precipitates, as determined by deep-level-transient spectroscopy (DLTS) on the bicrystal. (orig.).

  14. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    A. Teyou Ngoupo

    2015-01-01

    Full Text Available Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdTe1-xSx (x=0.12 and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm of CdTe1-xSx layer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.

  15. [Present state and future of flat panel detector in Japan].

    Science.gov (United States)

    Higashida, Yoshiharu

    2002-01-01

    In our country, the introduction of flat panel detector is carried out in the diagnosis region since before several years. In flat panel detector with the high image characteristic, large expectation is being placed. In this paper, image characteristic of flat panel detector and effectiveness of clinical application were reviewed. It is anticipated that flat panel detector with the excellent image characteristic gives large effect in the radiological diagnosis.

  16. RF magnetron sputtering deposition of CdTe passivation on HgCdTe

    Science.gov (United States)

    Rutkowski, Jaroslaw; Adamiec, Krzysztof; Rogalski, Antoni

    1998-04-01

    In this study, we report the RF magnetron sputtering growth and characterization of CdTe passivant on bulk n-type HgCdTe. Our investigations include the HgCdTe surface preparation and in-situ pretreatment, deposition-induced surface damage, interface charge, CdTe film stoichiometry, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The heterostructures are also characterized by reflectance measurement. In order to investigate the passivation properties of CdTe/HgCdTe heterostructures, we have modeled the band diagram of abrupt CdTe/HgCdTe heterojunction. The effect of sputtering growth condition parameters is also reported. The sputtering CdTe layers, exhibit excellent dielectric, insulating and mechano- chemical properties, as well as interface properties. The interfaces are characterized by slight accumulation and a small hysteresis. A carefully controlled growth process and surface pretreatment tailored to the specific material are required in order to obtain near flat band conditions on n- type materials. Additional informations on surface limitations are obtained from analyzing the I-V characteristics of photodiodes with metal gates covering the p-n junction surface location.

  17. Thin-film CdTe photovoltaic cells by laser deposition and rf sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R.G.; Bhat, A.; Tabory, C.; Shao, M.; Li, Y.; Savage, M.E.; Tsien, L. (Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606 (United States))

    1992-12-01

    Laser-driven physical vapor deposition (LDPVD) and radio-frequency (rf) sputtering have been used to fabricate thin-film solar cells on SnO[sub 2]-coated glass substrates. The laser-ablation process readily permits the use of several target materials in the same vacuum chamber and complete solar cell structures have been fabricated on SnO[sub 2]-coated glass using LDPVD for the CdS, CdTe, and CdCl[sub 2]. To date the best devices ([similar to]9% AM1.5) have been obtained after a post-deposition anneal at 400 [degree]C. In addition, cells have been fabricated with the combination of LDPVD CdS, rf-sputtered CdTe, and LDPVD CdCl[sub 2]. The performance of these cells indicates considerable promise for the potential of rf sputtering for CdTe photovoltaic devices. The physical mechanisms of LDPVD have been studied by transient optical spectroscopy on the laser ablation plume. These measurements have shown that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a large fraction which is highly excited internally ([ge]6 eV) and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. Quality of as-grown and annealed films has been analyzed by optical absorption. Raman scattering, photoluminescence, electrical conductivity, Hall effect, x-ray diffraction, and SEM/EDS.

  18. The activation of thin film CdTe solar cells using alternative chlorine containing compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B., E-mail: B.Maniscalco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); Abbas, A.; Bowers, J.W.; Kaminski, P.M.; Bass, K. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); West, G. [Department of Materials, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom)

    2015-05-01

    The re-crystallisation of thin film cadmium telluride (CdTe) using cadmium chloride (CdCl{sub 2}) is a vital process for obtaining high efficiency photovoltaic devices. However, the precise micro-structural mechanisms involved are not well understood. In this study, we have used alternative chlorine-containing compounds to determine if these can also assist the re-crystallisation of the CdTe layer and to understand the separate roles of cadmium and chlorine during the activation. The compounds used were: tellurium tetrachloride (TeCl{sub 4}), cadmium acetate (Cd(CH{sub 3}CO{sub 2}){sub 2}), hydrochloric acid (HCl) and zinc chloride (ZnCl{sub 2}). TeCl{sub 4} was used to assess the role of Cl and the formation of a Te-rich outer layer which may assist the formation of the back contact. (Cd(CH{sub 3}CO{sub 2}){sub 2}) and HCl were used to distinguish between the roles of cadmium and chlorine in the process. Finally, ZnCl{sub 2} was employed as an alternative to CdCl{sub 2}. We report on the efficacy of using these alternative Cl-containing compounds to remove the high density of planar defects present in untreated CdTe. - Highlights: • Cadmium chloride (CdCl{sub 2}) activation treatment • Alternative chlorine containing compounds • Microstructure analysis and electrical performances.

  19. Preparation and Properties of CdTe Polycrystalline Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    ZHENG Huajing; ZHANG Jingquan; FENG Lianghuan; ZHENG Jiagui; CAI Wei; LI Bing; CAI Yaping

    2006-01-01

    The structure and characteristics of CdTe thin films are closely dependent on the whole deposition process in close-space sublimation (CSS). The physical mechanism of CSS was analyzed and the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The results indicate: the samples deposited at different pressures have a cubical structure of CdTe and the diffraction peaks of CdS and SnO2∶F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate temperature of 500 ℃ and a source temperature of 620 ℃, the polycrystalline thin films can be made, so the production of high-quality integrated cell with SnO2:F/CdS/CdTe/Au structure is hopeful.

  20. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Science.gov (United States)

    Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.; Dippo, Pat; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Barnes, Teresa M.; Myers, Thomas H.

    2016-08-01

    Heterostructures with CdTe and CdTe1-xSex (x ˜ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ˜ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ˜6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  1. Modeling the defect distribution and degradation of CdTe ultrathin films

    Science.gov (United States)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  2. Microscopic partition of pressure and elastic constants in CdTe polymorphs

    Energy Technology Data Exchange (ETDEWEB)

    Ouahrani, T. [Laboratoire de Physique Théorique, Tlemcen University, 13000 Tlemcen (Algeria); École Préparatoire en Sciences et Techniques, 13000 Tlemcen (Algeria); Franco, R.; Menéndez, J.M.; Marqués, M. [MALTA Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo (Spain); Recio, J.M., E-mail: jmrecio@uniovi.es [MALTA Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo (Spain)

    2014-04-01

    Highlights: • Pressure ranges of stability of CdTe polymorphs are successfully computed. • A cubic B2 phase is predicted at pressures above 70 GPa. • Microscopic pressures are defined without resorting to energy partitions. • Cd shows a greater mechanical resistance than Te when pressure is applied. • Atomic equations of state are proposed for Cd and Te along the polymorphic sequence. - Abstract: Within the framework of density functional theory, first principles calculations were carried out to determine pressure stability ranges of zinc-blende (B3), cinnabar (Cinn), rock-salt (B1), orthorhombic (Cmcm), and cesium chloride (B2) phases of CdTe. In agreement with experimental observations, we found a B3→Cinn→B1→Cmcm pressure-induced sequence, and predict the B2 phase as a potential high pressure polymorph. The equations of state of all these polymorphs and the components of the elasticity tensor of the B3 phase at zero pressure were determined and microscopically analyzed in terms of atomic contributions. The concept of local pressure allows for quantifying differences in the role played by Cd and Te as regards the compressibility of CdTe phases, and suggests the existence of a general behavior under pressure for binary II–VI semiconductors.

  3. Electron and hole drift mobility measurements on thin film CdTe solar cells

    Science.gov (United States)

    Long, Qi; Dinca, Steluta A.; Schiff, E. A.; Yu, Ming; Theil, Jeremy

    2014-07-01

    We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10-1-100 cm2/V s, and holes are in the range of 100-101 cm2/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl2; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.

  4. Optical absorption enhancement of CdTe nanostructures by low-energy nitrogen ion bombardment

    Science.gov (United States)

    Akbarnejad, E.; Ghoranneviss, M.; Mohajerzadeh, S.; Hantehzadeh, M. R.; Asl Soleimani, E.

    2016-02-01

    In this paper we present the fabrication of cadmium telluride (CdTe) nanostructures by means of RF magnetron sputtering followed by low-energy ion implantation and post-thermal treatment. We have thoroughly studied the structural, optical, and morphological properties of these nanostructures. The effects of nitrogen ion bombardment on the structural parameters of CdTe nanostructures such as crystal size, microstrain, and dislocation density have been examined. From x-ray diffractometer (XRD) analysis it could be deduced that N+ ion fluence and annealing treatment helps to form (3 0 0) orientation in the crystalline structure of cadmium-telluride films. Fluctuations in optical properties like the optical band gap and absorption coefficient as a function of N+ ion fluences have been observed. The annealing of the sample irradiated by a dose of 1018 ions cm-2 has led to great enhancement in the optical absorption over a wide range of wavelengths with a thickness of 250 nm. The enhanced absorption is significantly higher than the observed value in the original CdTe layer with a thickness of 3 μm. Surface properties such as structure, grain size and roughness are noticeably affected by varying the nitrogen fluences. It is speculated that nitrogen bombardment and post-annealing treatment results in a smaller optical band gap, which in turn leads to higher absorption. Nitrogen bombardment is found to be a promising method to increase efficiency of thin film solar cells.

  5. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Science.gov (United States)

    Moseley, John; Al-Jassim, Mowafak M.; Guthrey, Harvey L.; Burst, James M.; Duenow, Joel N.; Ahrenkiel, Richard K.; Metzger, Wyatt K.

    2016-09-01

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  6. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

    Science.gov (United States)

    Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi

    2016-10-01

    A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), {Te}_{{Cd}}^{2 + } - {V}_{{Cd}}^{2 - } (D complex), {In}_{{Cd}}^{ + } - {V}_{{Cd}}^{ - } (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a {V}_{{Cd}}^{2 - } , TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

  7. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine N. [Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA; National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Kuciauskas, Darius [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Swartz, Craig H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Dippo, Pat [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Edirisooriya, Madhavie [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Ogedengbe, Olanrewaju S. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Sohal, Sandeep [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Hancock, Bobby L. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; LeBlanc, Elizabeth G. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Jayathilaka, Pathiraja A. R. D. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Barnes, Teresa M. [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Myers, Thomas H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA

    2016-08-29

    Heterostructures with CdTe and CdTe 1-xSex (x ~ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ~ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ~6 um, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 us with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 us.

  8. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Guthrey, Harvey L. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Burst, James M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Duenow, Joel N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Ahrenkiel, Richard K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

    2016-09-09

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  9. An optimized multilayer structure of CdS layer for CdTe solar cells application

    Energy Technology Data Exchange (ETDEWEB)

    Han Junfeng, E-mail: pkuhjf@gmail.com [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao Cheng, E-mail: Cliao@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Jiang Tao [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Zhao Kui [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Klein, A.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany)

    2011-04-28

    Research highlights: > Two different methods to prepare CdS films for CdTe solar cells. > A new multilayer structure of window layer for the CdTe solar cell. > Thinner CdS window layer for the solar cell than the standard CdS layer. > Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer ({approx}80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  10. ``CuInSe2 and CdTe thin films for photovoltaic applications''

    Science.gov (United States)

    Attar, G.; Bhethanobolta, D. P.; Dugan, K.; Karthikeyan, S.; Kazi, M.; Killian, J. L.; Muthaiah, A. B.; Nierman, D.; Oman, D. M.; Swaminathan, R.; Zafar, S. A.; Ferekides, C. S.; Morel, D. L.

    1994-06-01

    We are developing processing techniques for CuInSe2 that are manufacturing-friendly due to relaxed controls on deposition conditions. We routinely achieve Jsc's in the range 35-45+ mA/cm2, FF's of 0.55-0.63, and have recently achieved 410 mV in devices without advanced Ga alloying techniques. Our progress and analysis suggests that these processing techniques can achieve state-of-the-art efficiencies. We are also developing an understanding of the complex underlying device mechanisms and their correlation to processing. We propose that a multi-junction classical model which includes space charge recombination can adequately explain device performance and help guide development efforts. The effect of the substrate temperature on the performance of CdTe solar cells prepared by the close spaced sublimation (CSS) process is being investigated. Significant progress has been made and the maximum open-circuit voltage, short-circuit current, and fill factor obtained are 840-860 mV, 22+ mA/cm2, and 69-70% respectively. The extend of interface reaction between the CdTe and CdS layers appears to be dependent on the substrate temperature. Other process parameters such as the total pressure and spacing are of equal importance in obtaining dense CdTe films. Stability studies are also underway in order to determine whether any degradation mechanisms exist and identify their origins.

  11. Luminescent borate glass for efficiency enhancement of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steudel, Franziska, E-mail: franziska.steudel@iwmh.fraunhofer.de [Fraunhofer Application Center for Inorganic Phosphors, Branch Lab of Fraunhofer Institute for Mechanics of Materials IWM, Lübecker Ring 2, 59494 Soest (Germany); Loos, Sebastian [Department of Electrical Engineering, South Westphalia University of Applied Sciences, Lübecker Ring 2, 59494 Soest (Germany); Ahrens, Bernd; Schweizer, Stefan [Fraunhofer Application Center for Inorganic Phosphors, Branch Lab of Fraunhofer Institute for Mechanics of Materials IWM, Lübecker Ring 2, 59494 Soest (Germany); Department of Electrical Engineering, South Westphalia University of Applied Sciences, Lübecker Ring 2, 59494 Soest (Germany)

    2015-08-15

    Rare-earth (RE) doped borate glasses are investigated for their potential as photon down-shifting cover glass for CdTe solar cells. The barium borate base glass is doped with trivalent rare-earth ions such as Sm{sup 3+}, Eu{sup 3+}, and Tb{sup 3+} showing an intense luminescence in the red (Sm{sup 3+}, Eu{sup 3+}) and green (Tb{sup 3+}) spectral range upon excitation in the ultraviolet and blue. Additionally, the glasses are double-doped with two RE ions for a broad-band absorption. The gain in short-circuit current density of CdTe solar cells with different thicknesses of the CdS buffer layer is calculated. Though the single-doped glasses already reveal a slight increase in short-circuit current density, the double-doped glasses allow for higher efficiency gains since a significant broader spectral range is covered for absorption. For a Tb{sup 3+}/Eu{sup 3+} double-doped glass with a RE doping level of 1 at% each, an efficiency increase of 1.32% can be achieved. - Highlights: • Rare-earth doped front glass for high efficiency CdTe solar cells were prepared. • Double-doping allows for higher efficiency gains than single-doping. • Efficiency enhancement of 1.32% can be achieved with Tb{sup 3+}/Eu{sup 3+} doped front glass.

  12. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  13. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  14. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    Science.gov (United States)

    Pillet, J. C.; Pierre, F.; Jalabert, D.

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed

  15. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    Science.gov (United States)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  16. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  17. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-07-15

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is Te-2+/Cd, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve 10^17 cm-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of 10^17 cm-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  18. Aqueous synthesis of MPA-capped CdTe nanocrystals emitted in near infrared with high quantum yield.

    Science.gov (United States)

    Cao, Yongqiang; Liu, Ning; Yang, Ping; Zhu, Yuanna; Shi, Ruixia; Ma, Qian; Zhang, Aiyu

    2014-07-01

    The high luminescent near infrared (NIR)--emitting CdTe nanocrystals (NCs) with 3-mercaptopropionic acid (MPA) as the stabilized molecules had been sucessfully fabricated by a facile and simple water-reflux method. By virtue of the characterizations for the as-prepared MPA-capped CdTe NCs, such as UV-Vis absorption, steady-state photoluminescence (PL), time-resolved PL spectra and PL image, the optical properties, diameters and morphologies of the CdTe NCs were investigated detailedly. With the increase of reflux time, the PL peak wavelength of NCs gradually shifted from red light to NIR spectra range within 7 h, and the PL quantum yield (QY) was increased firstly and then decreased slightly. It was worth noted that the NCs still showed a relative high PL QY of 47% as well as a narrow full width at half maximum (FWHM) of PL spectra even when the NCs emitted at the NIR wavelength of 754 nm. In addition, the average PL lifetime also exhibited an obvious increase as the growth of CdTe NCs due to the formation of thin CdS shell on the surface of CdTe. The PL stabilities for these NIR-emitting NCs (754 nm) in phosphate-buffered saline (PBS) buffer solution with various concentrations ranged from 0.005 to 0.1 M were also checked accordingly, and the results indicated that the as-prepared NIR-emitting CdTe NCs had a satisfied PL stability, implying a potential application in the biological field. Hopefully, all the superiority of these NIR-emitting CdTe NCs, such as high PL QY and PL lifetime, narrow FWHM of PL spectra, high PL stability in PBS solution, would make them to be a good candidate for biological applications in future.

  19. Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V.; Kee, R.; Wolden, C.; Kestner, J.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Fahrenbruch, A.

    2000-05-30

    ITN's three year project Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High Efficiency Thin Film PV Devices has the overall objectives of improving thin film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16% efficient CdTe PV films, i.e., close spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstration of APCVD of CdTe films, discovery of fundamental mass transport parameters, application of established engineering principles to the deposition of CdTe films, and verification of reactor design principles which could be used to design high throughput, high yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation and ultimately to higher device conversion efficiency and greater stability. Under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two dimension measurements and modeling. Accomplishments of the second year of the APCVD subcontract include: deposition of the first APCVD CdTe; identification of deficiencies in the first generation APCVD reactor; design, fabrication and testing of a ``simplified'' APCVD reactor; deposition of the first dense, adherent APCVD CdTe films; fabrication of the first APCVD CdTe PV device; modeling effects of CdSTe and SnOx layers; and electrical modeling of grain boundaries.

  20. Development of Small-Pixel CZT Detectors for Future High-Resolution Hard X-ray Missions

    Science.gov (United States)

    Beilicke, Matthias

    Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolutions of between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of hard X-ray telescopes will require pixelated hard X- ray detectors with pixels on a grid with a lattice constant of between 120 and 240 um. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than 1 keV. The science drivers for a high angular-resolution hard X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, AGN feedback, and the behavior of matter at very high densities. We propose a R&D research program to develop, optimize and study the performance of 100-200 um pixel pitch CdTe and Cadmium Zinc Telluride (CZT) detectors of 1-2 mm thickness. Our program aims at a comparison of the performance achieved with CdTe and CZT detectors, and the optimization of the pixel, steering grid, and guard ring anode patterns. Although these studies will use existing ASICs (Application Specific Integrated Circuits), our program also includes modest funds for the development of an ultra-low noise ASIC with a 2-D grid of readout pads that can be directly bonded to the 100-200 um pixel pitch CdTe and CZT detectors. The team includes the Washington University group (Prof. M. Beilicke and Co-I Prof. H.S.W. Krawczynski et al.), and co-investigator G. De Geronimo at Brookhaven National Laboratory (BNL). The Washington University group has a 10 year track record of innovative CZT detector R&D sponsored by the NASA Astronomy and Physics Research and Analysis (APRA) program. The accomplishments to date include the development of CZT detectors with pixel pitches between 350 um and 2.5 mm for the ProtoExist, EXIST, and X-Calibur hard X-ray missions with some of the best

  1. Spectral x-ray computed tomography scanner using a cadmium telluride detector

    Science.gov (United States)

    Sato, Eiichi; Oda, Yasuyuki; Yamaguchi, Satoshi; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Watanabe, Manabu; Kusachi, Shinya

    2016-10-01

    To obtain four tomograms with four different photon energy ranges simultaneously, we have developed a quad-energy Xray photon counter with a cadmium telluride (CdTe) detector and four sets of comparators and frequency-voltage converters (FVCs). X-ray photons are detected using the CdTe detector, and the event pulses from a shaping amplifier are sent to four comparators simultaneously to regulate four threshold energies of 20, 35, 50 and 65 keV. Using this counter, the energy ranges are 20-100, 35-100, 50-100 and 65-100 keV; the maximum energy corresponds to the tube voltage. Xray photons in the four ranges are counted using the comparators, and the logical pulses from the comparators are input to the FVCs. The outputs from the four FVCs are input to a personal computer through an analog-digital converter (ADC) to carry out quad-energy imaging. To observe contrast variations with changes in the threshold energy, we performed spectral computed tomography utilizing the quad-energy photon counter at a tube voltage of 100 kV and a current of 8.0 μA. In the spectral CT, four tomograms were obtained simultaneously with four energy ranges. The image contrast varied with changes in the threshold energy, and the exposure time for tomography was 9.8 min.

  2. GADRAS Detector Response Function.

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Dean J.; Harding, Lee; Thoreson, Gregory G; Horne, Steven M.

    2014-11-01

    The Gamma Detector Response and Analysis Software (GADRAS) applies a Detector Response Function (DRF) to compute the output of gamma-ray and neutron detectors when they are exposed to radiation sources. The DRF is fundamental to the ability to perform forward calculations (i.e., computation of the response of a detector to a known source), as well as the ability to analyze spectra to deduce the types and quantities of radioactive material to which the detectors are exposed. This document describes how gamma-ray spectra are computed and the significance of response function parameters that define characteristics of particular detectors.

  3. The TALE Tower Detector

    Science.gov (United States)

    Bergman, D. R.

    The TA Low Energy Extension will include a Tower FluorescenceDetector. Extensive air showers at the lowest usful energies for fluorescence detectors will in general be close to the detector. This requires viewing all elevation angles to be able to reconstruct showers. The TALE Tower Detector, operating in conjunction with other TALE detectors will view elevation angles up to above 70 degrees, with an azimuthal coverage of about 90 degrees. Results from a prototype mirror operated in conjunction with the HiRes detector will also be presented.

  4. Improvement of the crystallinity of CdTe epitaxial film grown on Si substrates by molecular beam epitaxy using the two-step growth method

    Energy Technology Data Exchange (ETDEWEB)

    Han, M.S.; Ryu, Y.S.; Song, B.K.; Kang, T.W. [Dongguk Univ., Seoul (Korea, Republic of). Dept. of Phys.; Kim, T.W. [Department of Physics, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

    1997-01-05

    Molecular beam epitaxy growth of CdTe epitaxial layers on Si (100) substrates using the two-step growth method was performed to produce high-quality CdTe thin layers. The reflection high-energy electron diffraction patterns were streaky with clear Kikuchi lines, which is direct evidence for layer-by-layer two-dimensional growth of CdTe on Si. From the X-ray diffraction analysis, the grown layer was found to be a CdTe (111) epitaxial film, regardless of the film thickness. Photoluminescence (PL) measurements at 12 K showed that the defect density of the CdTe film grown on Si using two-step growth decreased in comparison with that grown using direct growth. The bound exciton appearing in the PL measurements shifted to the low energy side as the thickness of the CdTe increased. When the CdTe thickness increased from 1 to 1.8 {mu}m, the peak position of the bound exciton shifted by 7.2 meV, and the stress obtained from the exciton peak shift was -12.405 kbar. These results indicate that high quality CdTe films grown by two-step growth hold promise for applications as buffer layers for the subsequent growth of Hg{sub x}Cd{sub 1-x}Te. (orig.) 16 refs.

  5. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  6. Crystallization from amorphous structure to hexagonal quantum dots induced by an electron beam on CdTe thin films

    Science.gov (United States)

    Becerril, M.; Zelaya-Angel, O.; Medina-Torres, A. C.; Aguilar-Hernández, J. R.; Ramírez-Bon, R.; Espinoza-Beltran, F. J.

    2009-02-01

    Amorphous cadmium-telluride films were prepared by rf sputtering on Corning 7059 glass substrates at room temperature. The deposition time was 10 and 12 h with a thickness of 400 and 480 (±40 nm), respectively. As-prepared films were amorphous according to X-ray diffraction (XRD) patterns, but a win-fit-software analysis of the main XRD broad band suggests a wurtzite structure at short range. Transmission electron microscopy (TEM) at 200 keV produces crystallization of the amorphous CdTe. The TEM-electron beam induces the formation of CdTe quantum dots with the wurtzite hexagonal structure (the metastable structure of CdTe) and with ˜6 nm of average grain size. As effect of a probable distortion of the CdTe crystalline lattice, the unit cell volume (UCV) shrinks to about 30% with respect to the bulk-UCV of CdTe. Besides, the energy band gap increases as expected, according to literature data on quantum confinement.

  7. Synthesis and characterization of magnetic and luminescent Fe3O4/CdTe nanocomposites using aspartic acid as linker

    Institute of Scientific and Technical Information of China (English)

    Xiu Ling Wang; Lu Wei; Guan Hong Tao; Meng Qiong Huang

    2011-01-01

    In this study, the preparation of a new kind of magnetic and luminescent Fe3O4/CdTe nanocomposites was demonstrated. Superparamagnetic Fe3O4 nanoparticles were first synthesized by hydrothermal coprecipitation of ferric and ferrous ions, followed by the modification of their surfaces with tetramethylammonium hydroxide (TMAOH) and the chemical activation with aspartic acid. The surface-modified Fe3O4 nanoparticles were then covalently coated with CdTe quantum dots (QDs), which were modified with mercaptoacetic acid (MPA), to form the Fe3O4/CdTe magnetic and luminescent nanocomposites through the coordination of the amino groups on the surfaces of Fe3O4 and the carboxyl groups on CdTe QDs. The structure and properties of as-synthesized nanocomposites were characterized. It was indicated that the nanocomposites possessed structure with an average diameter of 40-50 nm, yellow-green emission feature and room temperature ferro-magnetism. Both the fluorescence and UV-vis absorption spectra of the nanocomposites showed a blue shift comparing with those of CdTe QDs. The mechanism of the blue shift was presented. The nanocomposites retained the ferromagnetic property with a saturation magnetization of 8.9 emu/g.

  8. Synthesis and bio-imaging application of highly luminescent mercaptosuccinic acid-coated CdTe nanocrystals.

    Directory of Open Access Journals (Sweden)

    Erbo Ying

    Full Text Available Here we present a facile one-pot method to prepare high-quality CdTe nanocrystals in aqueous phase. In contrast to the use of oxygen-sensitive NaHTe or H(2Te as Te source in the current synthetic methods, we employ more stable sodium tellurite as the Te source for preparing highly luminescent CdTe nanocrystals in aqueous solution. By selecting mercaptosuccinic acid (MSA as capping agent and providing the borate-citrate acid buffering solution, CdTe nanocrystals with high quantum yield (QY >70% at pH range 5.0-8.0 can be conveniently prepared by this method. The influence of parameters such as the pH value of the precursor solution and the molar ratio of Cd(2+ to Na(2TeO(3 on the QY of CdTe nanocrystals was systematically investigated in our experiments. Under optimal conditions, the QY of CdTe nanocrystals is even high up to 83%. The biological application of luminescent MSA-CdTe to HEK 293 cell imaging was also illustrated.

  9. Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Vlasov, V. P.; Kanevsky, V. M.

    2016-11-01

    The growth of cadmium telluride films on a structured (0001) sapphire surface oriented at an angle of 44° to the vapor-flow direction and normal to the steps formed along the 11overline 2 0 direction is studied. It is found that this geometry of the vapor source and a substrate (heated to a temperature of 300°C) provides the growth of single-crystal CdTe films if a step height on the substrate surface is more than 1 nm. The results are explained by the occurrence of a longitudinal component of the diffusion flux of CdTe molecules and atoms toward the steps from the inner side and their high density at the step edge from the outer side due to the presence of the Ehrlich-Schwoebel barrier, which ensures the efficient supply of material and minimum supersaturation necessary for the nucleation at the step edge and growth of oriented CdTe islands. The cadmium telluride films that are grown have the ( {110} )[ {1overline 1 0} ]CdTe| {( {0001} )} .[ {11overline 2 0} ]A{l_2}{O_3} orientation and a composition similar to stoichiometric CdTe.

  10. A computational ab initio study of surface diffusion of sulfur on the CdTe (111 surface

    Directory of Open Access Journals (Sweden)

    Ebadollah Naderi

    2016-08-01

    Full Text Available In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111 A-type (Cd-terminated and B-type (Te-terminated surfaces within the density functional theory (DFT. The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  11. Drift Chambers detectors; Detectores de deriva

    Energy Technology Data Exchange (ETDEWEB)

    Duran, I.; Martinez laso, L.

    1989-07-01

    We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs.

  12. A new silicon drift detector for high spatial resolution STEM-XEDS: performance and applications.

    Science.gov (United States)

    Phillips, Patrick J; Paulauskas, Tadas; Rowlands, Neil; Nicholls, Alan W; Low, Ke-Bin; Bhadare, Santokh; Klie, Robert F

    2014-08-01

    A newly designed, 100 mm2, silicon drift detector has been installed on an aberration-corrected scanning transmission electron microscope equipped with an ultra-high resolution pole piece, without requiring column modifications. With its unique, windowless design, the detector's active region is in close proximity to the sample, resulting in a dramatic increase in count rate, while demonstrating an increased sensitivity to low energy X-rays and a muted tilt dependence. Numerous examples of X-ray energy dispersive spectrometry are presented on relevant materials such as Al x Ga1-x N nanowires, perovskite oxides, and polycrystalline CdTe thin films, across both varying length scales and accelerating voltages.

  13. Wide band X-ray Imager (WXI) and Soft Gamma-ray Detector (SGD) for the NeXT Mission

    CERN Document Server

    Takahashi, T; Dotani, T; Fukazawa, Y; Hayashida, K; Kamae, T; Kataoka, J; Kawai, N; Kitamoto, S; Kohmura, T; Kokubun, M; Koyama, K; Makishima, K; Matsumoto, H; Miyata, E; Murakami, T; Nakazawa, K; Momachi, M; Ozaki, M; Tajima, H; Tashiro, M; Tamagawa, T; Terada, Y; Tsunemi, H; Tsuru, T; Yamaoka, K; Yonetoku, D; Yoshida, A

    2004-01-01

    The NeXT mission has been proposed to study high-energy non-thermal phenomena in the universe. The high-energy response of the super mirror will enable us to perform the first sensitive imaging observations up to 80 keV. The focal plane detector, which combines a fully depleted X-ray CCD and a pixellated CdTe detector, will provide spectra and images in the wide energy range from 0.5 keV to 80 keV. In the soft gamma-ray band up to ~1 MeV, a narrow field-of-view Compton gamma-ray telescope utilizing several tens of layers of thin Si or CdTe detector will provide precise spectra with much higher sensitivity than present instruments. The continuum sensitivity will reach several times 10^(-8) photons/s/keV/cm^(2) in the hard X-ray region and a few times10^(-7) photons/s/keV/cm^(2) in the soft gamma-ray region.

  14. Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

    1994-09-01

    Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

  15. Clinical introduction of a linac head-mounted 2D detector array based quality assurance system in head and neck IMRT

    NARCIS (Netherlands)

    Korevaar, Erik W.; Wauben, David J. L.; van der Hulst, Peter C.; Langendijk, Johannes A.; van t Veld, Aart

    2011-01-01

    Background and purpose: IMRT QA is commonly performed in a phantom geometry but the clinical interpretation of the results in a 2D phantom plane is difficult. The main objective of our work is to move from film measurement based QA to 3D dose reconstruction in a patient CT scan. In principle, this c

  16. Thermal kinetic inductance detector

    Energy Technology Data Exchange (ETDEWEB)

    Cecil, Thomas; Gades, Lisa; Miceli, Antonio; Quaranta, Orlando

    2016-12-20

    A microcalorimeter for radiation detection that uses superconducting kinetic inductance resonators as the thermometers. The detector is frequency-multiplexed which enables detector systems with a large number of pixels.

  17. Forward tracking detectors

    Indian Academy of Sciences (India)

    Klaus Mönig

    2007-11-01

    Forward tracking is an essential part of a detector at the international linear collider (ILC). The requirements for forward tracking are explained and the proposed solutions in the detector concepts are shown.

  18. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  19. Effect of CdTe Deposition Conditions by Close Spaced Sublimation on Photovoltaic Properties of CdS/CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Han, B.W.; Ahn, J.H.; Ahn, B.T. [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

    1998-06-01

    CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thickness of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3 X 10{sup 4} {Omega}.cm. For constant substrate temperature the optimum substrate temperature for CdTe deposition was 600 deg. C. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 620 deg. C, and then deposited at 540 deg. C. The CdTe film was annealed at 620 deg. C and 600 deg. C sequentially to maintain the CdTe film quality. The photovoltaic cell efficiency improved by the two-wave process. For constant substrate temperature, the optimum thickness for CdTe was 5-6{mu}m. Above 6{mu}m CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the V{sub oc} remained almost constant, while J{sub sc} and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITO layer in this study was 300-450nm. In this experiment we obtained the efficiency of 9.4% in the 0.5cm{sup 2} cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency. (author). 9 refs.,10 figs.

  20. The CAPRICE RICH detector

    Energy Technology Data Exchange (ETDEWEB)

    Basini, G. [INFN, Laboratori Nazionali di Frascati, Rome (Italy); Codino, A.; Grimani, C. [Perugia Univ. (Italy)]|[INFN, Perugia (Italy); De Pascale, M.P. [Rome Univ. `Tor Vergata` (Italy). Dip. di Fisica]|[INFN, Sezione Univ. `Tor Vergata` Rome (Italy); Cafagna, F. [Bari Univ. (Italy)]|[INFN, Bari (Italy); Golden, R.L. [New Mexico State Univ., Las Cruces, NM (United States). Particle Astrophysics Lab.; Brancaccio, F.; Bocciolini, M. [Florence Univ. (Italy)]|[INFN, Florence (Italy); Barbiellini, G.; Boezio, M. [Trieste Univ. (Italy)]|[INFN, Trieste (Italy)

    1995-09-01

    A compact RICH detector has been developed and used for particle identification in a balloon borne spectrometer to measure the flux of antimatter in the cosmic radiation. This is the first RICH detector ever used in space experiments that is capable of detecting unit charged particles, such as antiprotons. The RICH and all other detectors performed well during the 27 hours long flight.