Non-LTE equivalent widths for Si II, III and IV

International Nuclear Information System (INIS)

Becker, S.R.; Butler, K.

1990-01-01

Equivalent widths for a set of Si II, III and IV lines reliable for the determination of temperatures in the B star parameter range are given. They are calculated on a fine grid of LTE line blanketed model atmospheres and lie in the wavelength region from 4070 A to 5070 A

Protection of 310l Stainless Steel from Wear at Elevated Temperatures using Conicraly Thermal Spray Coatings with and without Sic Addition

Science.gov (United States)

Zhang, Yan; Zhang, Tao; Li, Kaiyang; Li, Dongyang

2017-10-01

Due to its high oxidation resistance, 310L stainless steel is often used for thermal facilities working at high-temperatures. However, the steel may fail prematurely at elevated temperatures when encounter surface mechanical attacks such as wear. Thermal spray coatings have been demonstrated to be effective in protecting the steel from wear at elevated temperatures. In this study, we investigated the effectiveness of high velocity oxy-fuel(HVOF) spraying CoNiCrAlY/SiC coatings in resisting wear of 310L stainless steel at elevated temperature using a pin-on-disc wear tester. In order to further improve the performance of the coating, 5%SiC was added to the coating. It was demonstrated that the CoNiCrAlY/SiC coating after heat treatment markedly suppressed wear. However, the added SiC particles did not show benefits to the wear resistance of the coating. Microstructures of CoNiCrAlY coatings with and without the SiC addition were characterized in order to understand the mechanism responsible for the observed phenomena.

10 CFR 5.310 - Recruitment.

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2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Recruitment. 5.310 Section 5.310 Energy NUCLEAR REGULATORY... FINANCIAL ASSISTANCE Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 5.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 5.300 through 5.310 apply shall not...

10 CFR 1042.310 - Recruitment.

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2010-01-01

... 10 Energy 4 2010-01-01 2010-01-01 false Recruitment. 1042.310 Section 1042.310 Energy DEPARTMENT... Recruitment Prohibited § 1042.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 1042.300 through 1042.310 apply shall not discriminate on the basis of sex in the recruitment and admission...

45 CFR 2555.310 - Recruitment.

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2010-10-01

... 45 Public Welfare 4 2010-10-01 2010-10-01 false Recruitment. 2555.310 Section 2555.310 Public... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 2555.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 2555.300 through 2555.310 apply shall not discriminate on the...

45 CFR 618.310 - Recruitment.

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2010-10-01

... 45 Public Welfare 3 2010-10-01 2010-10-01 false Recruitment. 618.310 Section 618.310 Public... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 618.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 618.300 through 618.310 apply shall not discriminate on the...

49 CFR 25.310 - Recruitment.

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2010-10-01

... 49 Transportation 1 2010-10-01 2010-10-01 false Recruitment. 25.310 Section 25.310 Transportation... Recruitment Prohibited § 25.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 25.300 through 25.310 apply shall not discriminate on the basis of sex in the recruitment and admission of...

32 CFR 196.310 - Recruitment.

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2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Recruitment. 196.310 Section 196.310 National... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 196.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 196.300 through 196.310 apply shall not discriminate on the...

22 CFR 146.310 - Recruitment.

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2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Recruitment. 146.310 Section 146.310 Foreign... Recruitment Prohibited § 146.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 146.300 through 146.310 apply shall not discriminate on the basis of sex in the recruitment and admission...

22 CFR 229.310 - Recruitment.

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2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Recruitment. 229.310 Section 229.310 Foreign... and Recruitment Prohibited § 229.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 229.300 through 229.310 apply shall not discriminate on the basis of sex in the recruitment and...

29 CFR 36.310 - Recruitment.

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2010-07-01

... 29 Labor 1 2010-07-01 2010-07-01 true Recruitment. 36.310 Section 36.310 Labor Office of the... FEDERAL FINANCIAL ASSISTANCE Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 36.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 36.300 through 36.310...

31 CFR 28.310 - Recruitment.

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2010-07-01

... 31 Money and Finance: Treasury 1 2010-07-01 2010-07-01 false Recruitment. 28.310 Section 28.310... Basis of Sex in Admission and Recruitment Prohibited § 28.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 28.300 through 28.310 apply shall not discriminate on the basis of sex in...

24 CFR 3.310 - Recruitment.

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2010-04-01

... 24 Housing and Urban Development 1 2010-04-01 2010-04-01 false Recruitment. 3.310 Section 3.310... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 3.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 3.300 through 3.310 apply shall not discriminate on the basis...

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

Science.gov (United States)

Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

2018-04-01

It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

TYPE Ia SNe ALONG REDSHIFT: THE R(Si II) RATIO AND THE EXPANSION VELOCITIES IN INTERMEDIATE-z SUPERNOVAE

International Nuclear Information System (INIS)

Altavilla, G.; Ruiz-Lapuente, P.; Balastegui, A.; Mendez, J.; Espana-Bonet, C.; Irwin, M.; Ellis, R. S.; McMahon, R. M.; Walton, N. A.; Folatelli, G.; Goobar, A.; Nobili, S.; Stanishev, V.; Hillebrandt, W.

2009-01-01

We present a study of intermediate-z Type Ia supernovae (SNe Ia) using empirical physical diagrams which permit the investigation of those SNe explosions. This information can be very useful to reduce systematic uncertainties of the Hubble diagram of SNe Ia up to high z. The study of the expansion velocities and the measurement of the ratio R(Si II) allow subtyping of SNe Ia as done in nearby samples. The evolution of this ratio as seen in the diagram R(Si II)-(t) together with R(Si II) max versus (B - V) 0 indicates consistency of the properties at intermediate-z compared with the nearby SNe Ia. At intermediate-z, expansion velocities of Ca II and Si II are found similar to those of the nearby sample. This is found in a sample of six SNe Ia in the range 0.033 ≤z≤ 0.329 discovered within the International Time Programme of SNe Ia for Cosmology and Physics in the spring run of 2002. 7 The program run under Omega and Lambda from Supernovae and the Physics of Supernova Explosions within the International Time Programme at the telescopes of the European Northern Observatory (ENO) at La Palma (Canary Islands, Spain). Two SNe Ia at intermediate-z were of the cool FAINT type, one being an SN1986G-like object highly reddened. The R(Si II) ratio as well as subclassification of the SNe Ia beyond templates help to place SNe Ia in their sequence of brightness and to distinguish between reddened and intrinsically red supernovae. This test can be done with very high z SNe Ia and it will help to reduce systematic uncertainties due to extinction by dust. It should allow to map the high-z sample into the nearby one.

7 CFR 1250.310 - Promotion.

Science.gov (United States)

2010-01-01

... 7 Agriculture 10 2010-01-01 2010-01-01 false Promotion. 1250.310 Section 1250.310 Agriculture... AND ORDERS; MISCELLANEOUS COMMODITIES), DEPARTMENT OF AGRICULTURE EGG RESEARCH AND PROMOTION Egg Research and Promotion Order Definitions § 1250.310 Promotion. Promotion means any action, including paid...

28 CFR 54.310 - Recruitment.

Science.gov (United States)

2010-07-01

... 28 Judicial Administration 2 2010-07-01 2010-07-01 false Recruitment. 54.310 Section 54.310... in Admission and Recruitment Prohibited § 54.310 Recruitment. (a) Nondiscriminatory recruitment. A... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

Transition probabilities of some Si II lines obtained by laser produced plasma emission

International Nuclear Information System (INIS)

Blanco, F.; Botho, B.; Campos, J.

1995-01-01

The absolute transition probabilities for 28 Si II spectral lines have been determined by measurement of emission line intensities from laser-produced plasmas of Si in Ar and Kr atmospheres. The studied plasma has a temperature of about 2 . 10 4 K and 10 17 cm -3 electron density. The local thermodynamic equilibrium conditions and plasma homogeneity have been checked. The results are compared with the available experimental and theoretical data and with present Hartree-Fock calculations in LS coupling. (orig.)

48 CFR 310.001 - Policy.

Science.gov (United States)

2010-10-01

... 48 Federal Acquisition Regulations System 4 2010-10-01 2010-10-01 false Policy. 310.001 Section 310.001 Federal Acquisition Regulations System HEALTH AND HUMAN SERVICES COMPETITION AND ACQUISITION PLANNING MARKET RESEARCH § 310.001 Policy. (a) OPDIVs are encouraged to conduct market research, to the...

40 CFR 5.310 - Recruitment.

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2010-07-01

... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Recruitment. 5.310 Section 5.310... in Admission and Recruitment Prohibited § 5.310 Recruitment. (a) Nondiscriminatory recruitment. A... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

43 CFR 41.310 - Recruitment.

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2010-10-01

... 43 Public Lands: Interior 1 2010-10-01 2010-10-01 false Recruitment. 41.310 Section 41.310 Public... in Admission and Recruitment Prohibited § 41.310 Recruitment. (a) Nondiscriminatory recruitment. A... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

14 CFR 1253.310 - Recruitment.

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2010-01-01

... 14 Aeronautics and Space 5 2010-01-01 2010-01-01 false Recruitment. 1253.310 Section 1253.310... in Admission and Recruitment Prohibited § 1253.310 Recruitment. (a) Nondiscriminatory recruitment. A... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

6 CFR 17.310 - Recruitment.

Science.gov (United States)

2010-01-01

... 6 Domestic Security 1 2010-01-01 2010-01-01 false Recruitment. 17.310 Section 17.310 Domestic... in Admission and Recruitment Prohibited § 17.310 Recruitment. (a) Nondiscriminatory recruitment. A... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

13 CFR 134.310 - Discovery.

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Discovery. 134.310 Section 134.310 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION RULES OF PROCEDURE GOVERNING CASES BEFORE THE... Designations § 134.310 Discovery. Discovery will not be permitted in appeals from size determinations or NAICS...

Investigation of the {Fe}/{Si} interface and its phase transformations

Science.gov (United States)

Fanciulli, M.; Degroote, S.; Weyer, G.; Langouche, G.

1997-04-01

Thin 57Fe films (3-10 Å) have been grown by molecular beam epitaxy (MBE) on (7 × 7) reconstructed Si(111) and (2 × 1) reconstructed Si(001) surfaces and by e-gun evaporation on an H-terminated Si(111) surface. Conversion electron Mössbauer spectroscopy (CEMS) with high statistical accuracy and resolution allowed a detailed microscopic investigation of the silicide formation mechanism and of the structural phase transformations upon annealing.

43 CFR 3.10 - Reports.

Science.gov (United States)

2010-10-01

... 43 Public Lands: Interior 1 2010-10-01 2010-10-01 false Reports. 3.10 Section 3.10 Public Lands: Interior Office of the Secretary of the Interior PRESERVATION OF AMERICAN ANTIQUITIES § 3.10 Reports. At the close of each season's field work the permitee shall report in duplicate to the Smithsonian...

13 CFR 113.310 - Recruitment.

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2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Recruitment. 113.310 Section 113... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 113.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 113.300 through 113.310 apply shall not discriminate on the...

36 CFR 1211.310 - Recruitment.

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2010-07-01

... 36 Parks, Forests, and Public Property 3 2010-07-01 2010-07-01 false Recruitment. 1211.310 Section... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 1211.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 1211.300 through 1211.310 apply shall not discriminate on the...

18 CFR 1317.310 - Recruitment.

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2010-04-01

... 18 Conservation of Power and Water Resources 2 2010-04-01 2010-04-01 false Recruitment. 1317.310... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 1317.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 1317.300 through 1317.310 apply shall not discriminate on the...

38 CFR 23.310 - Recruitment.

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2010-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 2 2010-07-01 2010-07-01 false Recruitment. 23.310... Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 23.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 23.300 through 23.310 apply shall not discriminate on the...

Nanosized yolk–shell Fe{sub 3}O{sub 4}@Zr(OH){sub x} spheres for efficient removal of Pb(II) from aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Pan, Shunlong [Jiangsu Key Laboratory of Chemical Pollution Control and Resources Reuse, School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Li, Jiansheng, E-mail: lijsh@mail.njust.edu.cn [Jiangsu Key Laboratory of Chemical Pollution Control and Resources Reuse, School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Wan, Gaojie; Liu, Chao [Jiangsu Key Laboratory of Chemical Pollution Control and Resources Reuse, School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Fan, Wenhong, E-mail: fanwh@buaa.edu.cn [Department of Environmental Science and Engineering, School of Chemistry and Environment, Beihang University, Beijing 100191 (China); Wang, Lianjun, E-mail: wanglj@mail.njust.edu.cn [Jiangsu Key Laboratory of Chemical Pollution Control and Resources Reuse, School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

2016-05-15

Highlights: • Well dispersed and easy separated nanoadsorbents with stable chemical property are highly desired. • Fe{sub 3}O{sub 4}@Zr(OH){sub x} yolk–shell nanospheres (YSNs) nanoadsorbents were prepared. • Enhanced Pb(II) adsorption capacity of 310.8 mg/g was achieved on Fe{sub 3}O{sub 4}@Zr(OH){sub x} YSNs based on Zr weight. • The cavities in Fe{sub 3}O{sub 4}@Zr(OH){sub x} YSNs is responsible for the improved performance. - Abstract: In this work, Fe{sub 3}O{sub 4}@Zr(OH){sub x} yolk–shell nanospheres (YSNs) were synthesized via a two-step process and further examined as adsorbents for the removal of Pb(II). To understand the hollow structure on the adsorption properties of Pb(II), another adsorbent without hollow cavities, i.e., Fe{sub 3}O{sub 4}@SiO{sub 2}@Zr(OH){sub x} core–shell nanospheres (CSNs), was also prepared for comparison. The adsorption results showed that Fe{sub 3}O{sub 4}@Zr(OH){sub x} YSNs exhibited 41.6% higher Pb(II) adsorption capacity as compared to that of Fe{sub 3}O{sub 4}@SiO{sub 2}@Zr(OH){sub x} CSNs. The isotherm was well fitted to Langmuir adsorption model with q{sub max} value of 310.8 mg/g after normalized by the weight of Zr in Fe{sub 3}O{sub 4}@Zr(OH){sub x} YSNs. Scanning transmission electron microscopy (STEM) mapping results revealed that the existence of cavities between Fe{sub 3}O{sub 4} cores and Zr(OH){sub x} shells is responsible for the improved adsorption performance. XPS analysis indicated the surface hydroxyl groups played a key role in the Pb(II) adsorption. The removal efficiency of Pb(II) was maintained above 90% in five consecutive adsorption–desorption cycles.

Anomalous defect processes in Si implanted amorphous SiO2, II

International Nuclear Information System (INIS)

Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

1994-01-01

Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

7 CFR 3052.310 - Financial statements.

Science.gov (United States)

2010-01-01

... 7 Agriculture 15 2010-01-01 2010-01-01 false Financial statements. 3052.310 Section 3052.310....310 Financial statements. (a) Financial statements. The auditee shall prepare financial statements... appropriate, cash flows for the fiscal year audited. The financial statements shall be for the same...

32 CFR 310.47 - Civil remedies.

Science.gov (United States)

2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Civil remedies. 310.47 Section 310.47 National Defense Department of Defense (Continued) OFFICE OF THE SECRETARY OF DEFENSE (CONTINUED) PRIVACY PROGRAM DOD PRIVACY PROGRAM Privacy Act Violations § 310.47 Civil remedies. In addition to specific remedial...

31 CFR 542.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 542.310 Section 542.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF....310 United States. The term United States means the United States, its territories and possessions...

31 CFR 548.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 548.310 Section 548.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF....310 United States. The term United States means the United States, its territories and possessions...

31 CFR 546.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 546.310 Section 546.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF....310 United States. The term United States means the United States, its territories and possessions...

31 CFR 547.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 547.310 Section 547.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF... General Definitions § 547.310 United States. The term United States means the United States, its...

32 CFR 310.46 - Civil actions.

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2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Civil actions. 310.46 Section 310.46 National Defense Department of Defense (Continued) OFFICE OF THE SECRETARY OF DEFENSE (CONTINUED) PRIVACY PROGRAM DOD PRIVACY PROGRAM Privacy Act Violations § 310.46 Civil actions. An individual may file a civil suit...

32 CFR 310.20 - Reproduction fees.

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2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Reproduction fees. 310.20 Section 310.20... PROGRAM DOD PRIVACY PROGRAM Access by Individuals § 310.20 Reproduction fees. (a) Assessing fees. (1) Charge the individual only the direct cost of reproduction. (2) Do not charge reproduction fees if...

15 CFR 8a.310 - Recruitment.

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2010-01-01

... 15 Commerce and Foreign Trade 1 2010-01-01 2010-01-01 false Recruitment. 8a.310 Section 8a.310... in Admission and Recruitment Prohibited § 8a.310 Recruitment. (a) Nondiscriminatory recruitment. A... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

46 CFR 310.11 - Cadet uniforms.

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2010-10-01

... for State, Territorial or Regional Maritime Academies and Colleges § 310.11 Cadet uniforms. Cadet uniforms shall be supplied at the school in accordance with the uniform regulations of the School. Those... 46 Shipping 8 2010-10-01 2010-10-01 false Cadet uniforms. 310.11 Section 310.11 Shipping MARITIME...

31 CFR 543.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 543.310 Section 543.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF... Definitions § 543.310 United States. The term United States means the United States, its territories and...

31 CFR 588.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 588.310 Section 588.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF... Definitions § 588.310 United States. The term United States means the United States, its territories and...

31 CFR 544.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 544.310 Section 544.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF... REGULATIONS General Definitions § 544.310 United States. The term United States means the United States, its...

31 CFR 541.310 - United States.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 541.310 Section 541.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF... § 541.310 United States. The term United States means the United States, its territories and possessions...

A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure

Science.gov (United States)

Voitsekhovskii, A. V.; Grigor'ev, D. V.; Korotaev, A. G.; Kokhanenko, A. P.; Tarasenko, V. F.; Shulepov, M. A.

2012-03-01

The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·1016 cm3 and mobility 500 cm2·V-1·s-1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.

7 CFR 1980.310 - Loan purposes.

Science.gov (United States)

2010-01-01

... 7 Agriculture 14 2010-01-01 2009-01-01 true Loan purposes. 1980.310 Section 1980.310 Agriculture... REGULATIONS (CONTINUED) GENERAL Rural Housing Loans § 1980.310 Loan purposes. The purpose of a loan guaranteed... applicant as a primary residence. The loan may be to purchase a new dwelling or an existing dwelling. The...

Type II band alignment in Ge1-x-ySixSny/Ge1-α-βSiαSnβ heterojunctions

Science.gov (United States)

Dey, Swagata; Mukhopadhyay, Bratati; Sen, Gopa; Basu, P. K.

2018-02-01

We have examined type II band alignment in Ge1-x-ySixSny/Ge1-α-βSiαSβ heterojunctions grown on virtual substrates in Si platform. It is found that, for different values of x, y, α and β, direct band gap type II band line up can be achieved for both tensile and compressive strains. The calculated band gap energy corresponds to the mid infrared to far infrared regions in the electromagnetic spectrum.

Efficient Transfer of Graphene-Physical and Electrical Performance Perspective

KAUST Repository

Ghoneim, Mohamed T.

2012-01-01

(in between 3-10) layers. Afterwards the sample was cut into three pieces and transferred to 300 nm SiO2 on Si substrates using three techniques, namely: (i) pickup transfer with top side of Graphene brought in contact with SiO2 [7], (ii) Ploy (methyl

46 CFR 153.310 - Ventilation system type.

Science.gov (United States)

2010-10-01

... 46 Shipping 5 2010-10-01 2010-10-01 false Ventilation system type. 153.310 Section 153.310... Handling Space Ventilation § 153.310 Ventilation system type. A cargo handling space must have a permanent forced ventilation system of the exhaust type. ...

10 CFR 1021.310 - Environmental impact statements.

Science.gov (United States)

2010-01-01

... 10 Energy 4 2010-01-01 2010-01-01 false Environmental impact statements. 1021.310 Section 1021.310 Energy DEPARTMENT OF ENERGY (GENERAL PROVISIONS) NATIONAL ENVIRONMENTAL POLICY ACT IMPLEMENTING PROCEDURES Implementing Procedures § 1021.310 Environmental impact statements. DOE shall prepare and...

15 CFR 310.2 - Definitions.

Science.gov (United States)

2010-01-01

... Assistant Secretary for Export Development, International Trade Administration, Department of Commerce. (e... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Definitions. 310.2 Section 310.2 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL...

Prototype Si microstrip sensors for the CDF-II ISL detector

CERN Document Server

Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

1999-01-01

Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

9 CFR 381.310 - Personnel and training.

Science.gov (United States)

2010-01-01

... INSPECTION AND CERTIFICATION POULTRY PRODUCTS INSPECTION REGULATIONS Canning and Canned Products § 381.310... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Personnel and training. 381.310 Section 381.310 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE...

31 CFR 515.310 - Transfer.

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2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Transfer. 515.310 Section 515.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN..., or other fiduciary; the creation or transfer of any lien; the issuance, docketing, filing, or the...

31 CFR 500.310 - Transfer.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Transfer. 500.310 Section 500.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN..., or other fiduciary; the creation or transfer of any lien; the issuance, docketing, filing, or the...

44 CFR 19.310 - Recruitment.

Science.gov (United States)

2010-10-01

... 44 Emergency Management and Assistance 1 2010-10-01 2010-10-01 false Recruitment. 19.310 Section... RECEIVING FEDERAL FINANCIAL ASSISTANCE Discrimination on the Basis of Sex in Admission and Recruitment Prohibited § 19.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient to which §§ 19.300 through 19...

13 CFR 130.310 - Area of service.

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Area of service. 130.310 Section 130.310 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION SMALL BUSINESS DEVELOPMENT CENTERS § 130.310 Area of service. The AA/SBDC shall designate in writing the Area of Service of each...

32 CFR 310.36 - OMB training guidelines.

Science.gov (United States)

2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false OMB training guidelines. 310.36 Section 310.36... PROGRAM DOD PRIVACY PROGRAM Training Requirements § 310.36 OMB training guidelines. The OMB guidelines (OMB Privacy Guidelines, 40 FR 28948 (July 9, 1975) require all agencies additionally to: (a) Instruct...

46 CFR 310.3 - Schools and courses.

Science.gov (United States)

2010-10-01

... 46 Shipping 8 2010-10-01 2010-10-01 false Schools and courses. 310.3 Section 310.3 Shipping... Minimum Standards for State, Territorial or Regional Maritime Academies and Colleges § 310.3 Schools and courses. (a) Schools with Federal aid. The following schools are presently operating with Federal aid...

32 CFR 310.42 - Reports control symbol.

Science.gov (United States)

2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Reports control symbol. 310.42 Section 310.42... PROGRAM DOD PRIVACY PROGRAM Reports § 310.42 Reports control symbol. Any report established by this subpart in support of the Privacy Program shall be assigned Report Control Symbol DD-COMP(A)1379. ...

46 CFR 310.63 - Uniforms and textbooks.

Science.gov (United States)

2010-10-01

... 46 Shipping 8 2010-10-01 2010-10-01 false Uniforms and textbooks. 310.63 Section 310.63 Shipping MARITIME ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRAINING MERCHANT MARINE TRAINING Admission and Training of Midshipmen at the United States Merchant Marine Academy § 310.63 Uniforms and textbooks. The Academy shall supply midshipmen uniforms an...

31 CFR 593.310 - Transfer.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Transfer. 593.310 Section 593.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN..., trustee, or fiduciary; the creation or transfer of any lien; the issuance, docketing, filing, or levy of...

31 CFR 535.310 - Transfer.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Transfer. 535.310 Section 535.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN..., or fiduciary; the creation or transfer of any lien; the issuance, docketing, filing, or the levy of...

16 CFR 310.2 - Definitions.

Science.gov (United States)

2010-01-01

... transaction pursuant to which the account will be charged. (x) Prize means anything offered, or purportedly... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Definitions. 310.2 Section 310.2 Commercial... person to access a customer's or donor's account, such as a credit card, checking, savings, share or...

21 CFR 333.310 - Acne active ingredients.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 5 2010-04-01 2010-04-01 false Acne active ingredients. 333.310 Section 333.310... FOR HUMAN USE TOPICAL ANTIMICROBIAL DRUG PRODUCTS FOR OVER-THE-COUNTER HUMAN USE Topical Acne Drug Products § 333.310 Acne active ingredients. The active ingredient of the product consists of any of the...

12 CFR 1102.310 - Service of process.

Science.gov (United States)

2010-01-01

... 12 Banks and Banking 7 2010-01-01 2010-01-01 false Service of process. 1102.310 Section 1102.310... Office, Procedures, Public Information § 1102.310 Service of process. (a) Service. Any subpoena or other... 20006. Where the ASC is named as a party, service of process shall be made pursuant to the Federal Rules...

Stark parameters of some asymmetrical Si II lines

International Nuclear Information System (INIS)

Ferhat, B; Azzouz, Y; Redon, R; Ripert, M; Lesage, A

2012-01-01

Six lines of SiII are experimentally studied in pulsed plasma generated by Nd :Yag laser breakdown on pure solid silicon target. A set of experimental Stark parameters of asymmetrical lines are measured in temperature range from 14 000 K to 18 000 K (using Boltzmann plot). Calculated values of the electron density (using Griem's formula) vary from 1.7 to 6.1 × 10 23 m −3 . Processed spectral lines are 333.982 nm (3s 2 4p -3s 2 6s) and 397.746 nm, 399.177 nm, 399.801 nm, 401.622 nm (3d' 2 F 0 -4f' 4 G) and (3d' 2 F 0 - 4f' 2 G) of astrophysical interest. Asymmetrical line shapes are synthesized by a sum of two semi-Lorentzian distributions. The obtained fit is in good agreement with the measured spectra.

Fe3O4@SiO2@CS-TETA functionalized graphene oxide for the adsorption of methylene blue (MB) and Cu(II)

Science.gov (United States)

Wang, Fan; Zhang, Lijuan; Wang, Yeying; Liu, Xijian; Rohani, Sohrab; Lu, Jie

2017-10-01

The graphene oxide (GO) functionalized by Fe3O4@SiO2@CS-TETA nanoparticles, Fe3O4@SiO2@CS-TETA-GO, was firstly fabricated in a mild way as a novel adsorbent for the removal of Cu(II) ions and methylene blue (MB) from aqueous solutions. The magnetic composites showed a good dispersity in water and can be conveniently collected for reuse through magnetic separation due to its excellent magnetism. When the Fe3O4@SiO2@CS- TETA-GO was used as an absorbent for the absorption of MB and Cu(II), the adsorption kinetics and isotherms data well fitted the pseudo-second-order model and the Langmuir model, respectively. Under the optimized pH and initial concentration, the maximum adsorption capacity was about 529.1 mg g-1 for MB in 20 min and 324.7 mg g-1 for Cu(II) in 16 min, respectively, exhibiting a better adsorption performance than other GO-based adsorbents reported recently. More importantly, the synthesized adsorbent could be effectively regenerated and repeatedly utilized without significant capacity loss after six times cycles. All the results demonstrated that Fe3O4@SiO2@CS-TETA-GO could be used as an excellent adsorbent for the adsorption of Cu(II) and MB in many fields.

42 CFR 495.310 - Medicaid provider incentive payments.

Science.gov (United States)

2010-10-01

... 42 Public Health 5 2010-10-01 2010-10-01 false Medicaid provider incentive payments. 495.310 Section 495.310 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... INCENTIVE PROGRAM Requirements Specific to the Medicaid Program § 495.310 Medicaid provider incentive...

40 CFR 1065.310 - Torque calibration.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 32 2010-07-01 2010-07-01 false Torque calibration. 1065.310 Section... Conditions § 1065.310 Torque calibration. (a) Scope and frequency. Calibrate all torque-measurement systems including dynamometer torque measurement transducers and systems upon initial installation and after major...

Specific heat and AC susceptibility of antiferromagnetic Kondo lattices CeAu.sub.2./sub.Si.sub.2./sub. and CeAg.sub.2./sub.Si.sub.2./sub..

Czech Academy of Sciences Publication Activity Database

Šantavá, Eva; Vejpravová, J.; Honda, F.; Komatsubara, T.; Sechovský, V.

2007-01-01

Roč. 310, - (2007), e586-e588 ISSN 0304-8853 Institutional research plan: CEZ:AV0Z10100520 Keywords : CeT 2 Si 2 * magnetic phase transition * magnetization * specific heat Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

Thermodynamic study and intrinsic type II superconductivity in the A-15 compound V3Si

International Nuclear Information System (INIS)

Muto, Y.; Toyota, N.; Noto, K.; Akutsu, K.; Isino, M.; Fukase, T.

1979-01-01

The specific heat of a single crystal of the A-15-type compound V 3 Si in the normal, mixed, and superconducting states has been measured from 4 to 30 K in magnetic fieldsup to 50 kOe. The analysis has been performed in a self-consistent way based on the second-order phase transition from the normal to the superconducting state. The thermodynamic critical field and then various physical parameters characterizing the superconducting and normal states are almost consistently derived from the thermodynamcis and the microscopic BCS-GLAG theory. It is confirmed that V 3 Si is an intrinsic type II superconductor with a high intrinsic GL parameter k 0

41 CFR 101-4.310 - Recruitment.

Science.gov (United States)

2010-07-01

... 41 Public Contracts and Property Management 2 2010-07-01 2010-07-01 true Recruitment. 101-4.310... Admission and Recruitment Prohibited § 101-4.310 Recruitment. (a) Nondiscriminatory recruitment. A recipient... recruitment and admission of students. A recipient may be required to undertake additional recruitment efforts...

Calculated Resonance Line Profiles of [Mg II], [C II], and [Si IV] in the Solar Atmosphere

Science.gov (United States)

Avrett, E.; Landi, E.; McKillop, S.

2013-12-01

NASA's Interface Region Imaging Spectrograph space mission, launched 2013 June 27, is intended to study the structure of the solar chromosphere and the transition region between the chromosphere and corona. The spectral lines to be observed include the Mg II k line at 2796.5 Å, the C II 1334.5 Å line, and the Si IV line at 1393.8 Å, which are formed in the middle chromosphere, the upper chromosphere, and the lower transition region, respectively. Here we calculate the profiles of these lines from four models of the solar atmosphere, intended to represent the faint and mean internetwork, a network lane, and bright network. We show how the profiles change from the center of the solar disk toward the limb of the Sun and in response to outflows and inflows. These results are intended to cover the range of expected quiet-Sun observations and assist in their interpretation. We expect that the observations will lead to improvements in the models, which can then be used to estimate the required non-radiative heating in the different regions.

Calculated resonance line profiles of [Mg II], [C II], and [Si IV] in the solar atmosphere

International Nuclear Information System (INIS)

Avrett, E.; McKillop, S.; Landi, E.

2013-01-01

NASA's Interface Region Imaging Spectrograph space mission, launched 2013 June 27, is intended to study the structure of the solar chromosphere and the transition region between the chromosphere and corona. The spectral lines to be observed include the Mg II k line at 2796.5 Å, the C II 1334.5 Å line, and the Si IV line at 1393.8 Å, which are formed in the middle chromosphere, the upper chromosphere, and the lower transition region, respectively. Here we calculate the profiles of these lines from four models of the solar atmosphere, intended to represent the faint and mean internetwork, a network lane, and bright network. We show how the profiles change from the center of the solar disk toward the limb of the Sun and in response to outflows and inflows. These results are intended to cover the range of expected quiet-Sun observations and assist in their interpretation. We expect that the observations will lead to improvements in the models, which can then be used to estimate the required non-radiative heating in the different regions.

32 CFR 310.25 - Disclosure accounting.

Science.gov (United States)

2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Disclosure accounting. 310.25 Section 310.25....25 Disclosure accounting. (a) Disclosure accountings. (1) Keep an accurate record of all disclosures... accounting is required even if the individual has consented to the disclosure of the information. (3...

49 CFR 1016.310 - Judicial review.

Science.gov (United States)

2010-10-01

... 49 Transportation 8 2010-10-01 2010-10-01 false Judicial review. 1016.310 Section 1016.310 Transportation Other Regulations Relating to Transportation (Continued) SURFACE TRANSPORTATION BOARD, DEPARTMENT... Judicial review. Judicial review of final Board decisions on awards may be sought as provided in 5 U.S.C...

31 CFR 587.310 - United States.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false United States. 587.310 Section 587...) MILOSEVIC SANCTIONS REGULATIONS General Definitions § 587.310 United States. The term United States means the United States, its territories and possessions, and all areas under the jurisdiction or authority...

46 CFR 28.310 - Launching of survival craft.

Science.gov (United States)

2010-10-01

... 46 Shipping 1 2010-10-01 2010-10-01 false Launching of survival craft. 28.310 Section 28.310... Operate With More Than 16 Individuals on Board § 28.310 Launching of survival craft. A gate or other... each survival craft which weighs more than 110 pounds (489 Newtons), to allow the survival craft to be...

29 CFR 99.310 - Financial statements.

Science.gov (United States)

2010-07-01

... 29 Labor 1 2010-07-01 2010-07-01 true Financial statements. 99.310 Section 99.310 Labor Office of the Secretary of Labor AUDITS OF STATES, LOCAL GOVERNMENTS, AND NON-PROFIT ORGANIZATIONS Auditees § 99... have separate audits in accordance with § 99.500(a) and prepare separate financial statements. (b...

31 CFR 545.310 - The Taliban.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false The Taliban. 545.310 Section 545.310 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN... also known as the “Taleban,” “Islamic Movement of Taliban,” “the Taliban Islamic Movement,” “Talibano...

Energy determination at BEPC-II

International Nuclear Information System (INIS)

Achasov, M.N.; Blinov, V.E.; Bogomyagkov, A.V.; Fu ChengDong; Harris, F.A.; Kaminsky, V.V.; Liu, Q.; Mo Xiaohu; Muchnoi, N.Yu.; Nikitin, S.A.; Nikolaev, I.B.; Qin Qing; Qu Huamin; Olsen, S.L.; Pyata, E.E.; Shamov, A.G.; Shen, C.P.; Varner, G.S.; Wang Yifang; Xu Jinqiang

2009-01-01

The BEPC-II collider beam energy calibration system is discussed. The system is based on the Compton backscattering method. The expected precision of the electron and positron beam energy ε determination is δε/ε∼3.10 -5 .

9 CFR 318.310 - Personnel and training.

Science.gov (United States)

2010-01-01

... Section 318.310 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE AGENCY ORGANIZATION AND TERMINOLOGY; MANDATORY MEAT AND POULTRY PRODUCTS INSPECTION AND VOLUNTARY... Canning and Canned Products § 318.310 Personnel and training. All operators of thermal processing systems...

15 CFR 310.1 - Background and purpose.

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Background and purpose. 310.1 Section 310.1 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE MISCELLANEOUS REGULATIONS OFFICIAL U.S. GOVERNMENT...

41 CFR 101-26.310 - Ordering errors.

Science.gov (United States)

2010-07-01

... 41 Public Contracts and Property Management 2 2010-07-01 2010-07-01 true Ordering errors. 101-26.310 Section 101-26.310 Public Contracts and Property Management Federal Property Management Regulations System FEDERAL PROPERTY MANAGEMENT REGULATIONS SUPPLY AND PROCUREMENT 26-PROCUREMENT SOURCES AND...

31 CFR 596.310 - Terrorism List Government.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Terrorism List Government. 596.310... OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY TERRORISM LIST GOVERNMENTS SANCTIONS REGULATIONS General Definitions § 596.310 Terrorism List Government. The term Terrorism List Government...

45 CFR 310.0 - What does this part cover?

Science.gov (United States)

2010-10-01

... COMPUTERIZED TRIBAL IV-D SYSTEMS AND OFFICE AUTOMATION General Provisions § 310.0 What does this part cover... 45 Public Welfare 2 2010-10-01 2010-10-01 false What does this part cover? 310.0 Section 310.0... and Office Automation including: (a) The automated systems options for comprehensive Tribal IV-D...

41 CFR 109-45.310 - Antitrust laws.

Science.gov (United States)

2010-07-01

... 41 Public Contracts and Property Management 3 2010-07-01 2010-07-01 false Antitrust laws. 109-45.310 Section 109-45.310 Public Contracts and Property Management Federal Property Management... Antitrust laws. DOE offices shall submit to the Deputy Assistant Secretary for Procurement and Assistance...

Electrical characteristics of Li(Ni7/10Fe3/10)VO4 ceramics

International Nuclear Information System (INIS)

Ram, Moti

2011-01-01

Graphical abstract: Display Omitted Research highlights: → The compound [Li(Ni 7/10 Fe 3/10 )VO 4 ] was synthesized by a solution-based chemical method. → Structural, microstructural and electrical properties are studied using X-ray diffraction, field emission scanning electron microscopy and complex impedance spectroscopy techniques, respectively. → Electrical conductivity study indicates that electrical conduction in the material is a thermally activated process. - Abstract: The compound [Li(Ni 7/10 Fe 3/10 )VO 4 ] was produced by a solution-based chemical route whose electrical properties were investigated using complex impedance spectroscopy technique. X-ray diffraction study reveals an orthorhombic unit cell structure of the compound. Complex electrical impedance analysis exhibits: (i) grain interior, grain boundary and electrode-material interface contributions to electrical response and (ii) the presence of temperature dependent electrical relaxation phenomena in the material. Electrical conductivity study indicates that electrical conduction in the material is a thermally activated process.

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

New evaluation method of crack growth in SiC/SiC composites using interface elements

International Nuclear Information System (INIS)

Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

2000-01-01

Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

29 CFR 3.10 - Methods of payment of wages.

Science.gov (United States)

2010-07-01

... 29 Labor 1 2010-07-01 2010-07-01 true Methods of payment of wages. 3.10 Section 3.10 Labor Office... IN WHOLE OR IN PART BY LOANS OR GRANTS FROM THE UNITED STATES § 3.10 Methods of payment of wages. The payment of wages shall be by cash, negotiable instruments payable on demand, or the additional forms of...

40 CFR 63.310 - Requirements for startups, shutdowns, and malfunctions.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 9 2010-07-01 2010-07-01 false Requirements for startups, shutdowns, and malfunctions. 63.310 Section 63.310 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... CATEGORIES National Emission Standards for Coke Oven Batteries § 63.310 Requirements for startups, shutdowns...

32 CFR 310.34 - Amendment and deletion of system notices.

Science.gov (United States)

2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Amendment and deletion of system notices. 310.34... (CONTINUED) PRIVACY PROGRAM DOD PRIVACY PROGRAM Publication Requirements § 310.34 Amendment and deletion of... system. (see § 310.32(q)). (c) Deletion of system notices. (1) Whenever a system is discontinued...

15 CFR 310.7 - Statement for Federal participation.

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Statement for Federal participation. 310.7 Section 310.7 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE MISCELLANEOUS REGULATIONS OFFICIAL U.S...

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

15 CFR 310.6 - Recognition by the President.

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Recognition by the President. 310.6 Section 310.6 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE MISCELLANEOUS REGULATIONS OFFICIAL U.S. GOVERNMENT...

5 CFR 430.310 - Performance Review Boards (PRBs).

Science.gov (United States)

2010-01-01

... 5 Administrative Personnel 1 2010-01-01 2010-01-01 false Performance Review Boards (PRBs). 430.310... PERFORMANCE MANAGEMENT Managing Senior Executive Performance § 430.310 Performance Review Boards (PRBs). Each... appraisal. (3) When appraising a career appointee's performance or recommending a career appointee for a...

13 CFR 310.2 - Pressing need; alleviation of unemployment or underemployment.

Science.gov (United States)

2010-01-01

... unemployment or underemployment. 310.2 Section 310.2 Business Credit and Assistance ECONOMIC DEVELOPMENT ADMINISTRATION, DEPARTMENT OF COMMERCE SPECIAL IMPACT AREAS § 310.2 Pressing need; alleviation of unemployment or... Special Need. (b) For purposes of this part, excessive unemployment exists if the twenty-four (24) month...

31 CFR 551.310 - U.S. financial institution.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false U.S. financial institution. 551.310... Definitions § 551.310 U.S. financial institution. The term U.S. financial institution means any U.S. entity... foregoing. This term includes those branches, offices and agencies of foreign financial institutions that...

Synthesis and characterization of novel Cu(II) complex coated Fe3O4@SiO2 nanoparticles for catalytic performance

Science.gov (United States)

Nasrollahzadeh, Mahmoud; Sajjadi, Mohaddeseh; Khonakdar, Hossein Ali

2018-06-01

In this study, a convenient method for the synthesis of arylaminotetrazoles has been developed using a copper (II)-aminotetrazole complex immobilized on silica-coated Fe3O4 (Fe3O4@SiO2) nanoparticles (Fe3O4@SiO2-aminotet-Cu(II)) as a novel and efficient magnetically catalyst. The constructed superparamagnetic core-shell nanoparticles were successfully prepared, as proven using different spectroscopic techniques such as fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), thermogravimetry and differential thermogravimetry (TG-DTG) and vibrating sample magnetometer (VSM) analysis. The applicability of Fe3O4@SiO2-aminotet-Cu(II) magnetic catalyst allows the efficient synthesis of a variety of arylaminotetrazoles from the reaction between various arylcyanamides with sodium azide in high yields. The effect of catalyst loading was investigated. In addition, the reaction mechanism for the synthesis of arylaminotetrazoles was reasonably proposed. Results show that the 1-aryl-5-amino-1H-tetrazole (B isomer) and 5-arylamino-1H-tetrazole (A isomer) can be obtained from the arylcyanamides carrying electron-donating and electron-withdrawing substituents, respectively. This procedure offers a simple methodology, relatively short reaction times, easy work-up, high yields of the products and a cleaner reaction with elimination of hydrazoic acid (HN3). Moreover, catalyst can be conveniently recovered through the use of external magnet and reused for at least 6 times without any significant loss of its activity.

32 CFR 310.51 - General.

Science.gov (United States)

2010-07-01

... PROGRAM Computer Matching Program Procedures § 310.51 General. (a) A computer matching program covers two... action against specific individuals. (2) Performed to support research or statistical projects...

Silicon nitride and YMgSiAlON glass study by mechanical spectroscopy

International Nuclear Information System (INIS)

Doen, B.; Gadaud, P.

1996-01-01

Si 3 N 4 /TiN and YMgSiAlON/SiC composites have been studied by isothermal mechanical spectroscopy over a large frequency range. Internal friction curves obtained for the composite Si 3 N 4 -TiN(30% vol)-Al 2 O 3 , Y 2 O 3 (7.5% vol) exhibit a thermally activated pseudo peak superposed on a non purely exponential background. We can assume that this maximum is due to relaxations in the compressed intergranular glassy films. The apparent dynamical parameters deduced from its shift (11.2 eV and 3.10 -45 s) are unusual as observed in amorphous materials. YMgSiAlON glass has a composition very similar to the one of the intergranular phase of Si 3 N 4 /TiN composite. The damping curves obtained for YMgSiAlON/SiC composites above the glass transition temperature are pure exponential backgrounds. An original analysis of these curves allows to determine an activation energy of about 3.6 eV. This value is more realistic for an elementary diffusion mechanism in a glass near Tg. (orig.)

Mass test of AdvanSiD model ASD-NUV3S-P SiliconPMs for the Pixel Timing Counter of the MEG II experiment

Science.gov (United States)

Rossella, M.; Bariani, S.; Barnaba, O.; Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Nardò, R.; Prata, M. C.; Romano, E.; Scagliotti, C.; Simonetta, M.; Vercellati, F.

2017-02-01

The MEG II Timing Counter will measure the positron time of arrival with a resolution of 30 ps relying on two arrays of scintillator pixels read out by 6144 Silicon Photomultipliers (SiPMs) from AdvanSiD. They must be characterized, measuring their breakdown voltage, to assure that the gains of the SiPMs of each pixel are as uniform as possible, to maximize the pixel resolution. To do this an automatic test system that can measure sequentially the parameters of 32 devices has been developed.

75 FR 57880 - Airworthiness Directives; Airbus Model A310 Series Airplanes

Science.gov (United States)

2010-09-23

... docket. Relevant Service Information Airbus has issued Mandatory Service Bulletin A310-27-2099, Revision... Service Bulletin A310-27-2099, dated February 17, 2006; or Airbus Mandatory Service Bulletin A310-27-2099...- 2099, Revision 01, dated March 21, 2008. Note 1: For the purposes of this AD, a detailed inspection is...

Cu and Zn substituted silicon clathrates with the cubic type-II structure. Synthesis and characterization of Cs{sub 8}Na{sub 16}Cu{sub 3.8}Si{sub 132.2} and Cs{sub 8}Na{sub 16}Zn{sub 6.9}Si{sub 129.1}

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Marion C.; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

2017-12-13

Studies in the systems Cs-Na-Cu-Si and Cs-Na-Zn-Si yielded the novel clathrates Cs{sub 8}Na{sub 16}(Cu,Si){sub 136} and Cs{sub 8}Na{sub 16}(Zn,Si){sub 136}, both with the cubic type-II structure [space group Fd anti 3m (no. 227), Pearson symbol cF160]. The structures of the title compounds were established from single-crystal X-ray diffraction methods, confirming the complete ordering of the Cs and Na guest atoms. The framework-building Si atoms are found to be randomly substituted by Cu atoms on framework site 96g, exclusively. In the structure of Cs{sub 8}Na{sub 16}(Zn,Si){sub 136}, the refinements indicate that the Zn and Si atoms co-occupy two of the three framework sites with notable preference for site 96g over site 32e. The corresponding refined compositions and unit cell parameters are as follows: Cs{sub 8}Na{sub 16}Cu{sub 3.8}Si{sub 132.2(1)} [a = 14.7583(15) Aa]; Cs{sub 8}Na{sub 16}Zn{sub 6.9}Si{sub 129.1(1)} [a = 14.7682(5) Aa], respectively. The type-II clathrates can be obtained only from experiments employing both Na and Cs, whereas work in the ternary Cs-Cu-Si, Cs-Zn-Si, Na-Cu-Si, and Na-Zn-Si systems failed to yield any clathrate phases. At the same conditions, exploratory studies in the K-Zn-Si and Rb-Zn-Si systems provided evidence that type-I clathrates are favored. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

15 CFR 310.8 - Proposed plan for Federal participation.

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Proposed plan for Federal participation. 310.8 Section 310.8 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE MISCELLANEOUS REGULATIONS OFFICIAL U.S...

SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

33 CFR 334.310 - Chesapeake Bay, Lynnhaven Roads; navy amphibious training area.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 3 2010-07-01 2010-07-01 false Chesapeake Bay, Lynnhaven Roads; navy amphibious training area. 334.310 Section 334.310 Navigation and Navigable Waters CORPS OF....310 Chesapeake Bay, Lynnhaven Roads; navy amphibious training area. (a) The restricted area. Beginning...

46 CFR 310.52 - General.

Science.gov (United States)

2010-10-01

..., are required by the Act to sign an agreement committing them to service obligations following the date of graduation. The terms of the service obligation contract are set forth in § 310.58 of this subpart. ...

Transition probabilities for the 3s2 3p(2P0)-3s3p2(4P) intersystem lines of Si II

Science.gov (United States)

Calamai, Anthony G.; Smith, Peter L.; Bergeson, S. D.

1993-01-01

Intensity ratios of lines of the spin-changing 'intersystem' multiplet of S II (4P yields 2P0) at 234 nm have been used to determine electron densities and temperatures in a variety of astrophysical environments. However, the accuracy of these diagnostic calculations have been limited by uncertainties associated with the available atomic data. We report the first laboratory measurement, using an ion-trapping technique, of the radiative lifetimes of the three metastable levels of the 3s3p2 4P term of Si II. Our results are 104 +/- 16, 406 +/- 33, and 811 +/- 77 micro-s for lifetimes of the J = 1/2, 5/2, and 3/2 levels, respectively. A-values were derived from our lifetimes by use of measured branching fractions. Our A-values, which differ from calculated values by 30 percent or more, should give better agreement between modeled and observed Si II line ratios.

Application of EDTA-functionalized bamboo activated carbon (BAC) for Pb(II) and Cu(II) removal from aqueous solutions

Science.gov (United States)

Lv, Dan; Liu, Yu; Zhou, Jiasheng; Yang, Kunlun; Lou, Zimo; Baig, Shams Ali; Xu, Xinhua

2018-01-01

In this study, a novel bamboo activated carbon (BAC) with ethylene diamine tetraacetic acid (EDTA) functionality was prepared by direct grafting in the presence of tetraethyl orthosilicate (TEOS) as a crosslinking agent. The BAC@SiO2-EDTA was characterized by SEM, TEM, TGA, FTIR, XPS and its adsorption property for removal of Pb(II) and Cu(II) under various experimental conditions was also investigated. The characterization results reflected that EDTA was successfully assembled on the surface of the BAC and average pore size increased from 4.10 to 4.83 nm as BAC grafted with EDTA. Adsorption data fitted very well in Langmuir isotherm model and pseudo-second-order kinetic model. As compared with the raw BAC, the maximum adsorption capacities of BAC@SiO2-EDTA for the Pb(II) and Cu(II) increased from 45.45 to 123.45 mg g-1 and from 6.85 to 42.19 mg g-1, since the existence of EDTA on modified BAC promoted the formation of chemical complex. The removal of heavy metal ions mainly depended on the complexation with EDTA and the electrostatic attractions with negatively charged surface of BAC@SiO2-EDTA. The adsorption of Pb(II)/Cu(II) on the BAC@SiO2-EDTA was pH dependent and pH 5-6 was considered an optimum. However, lower temperature favored the adsorption and the maximum adsorption was recorded at 20 °C. In addition, BAC@SiO2-EDTA had an excellent reusability with about 40% decline in the adsorption capacity for Pb(II) after fifth reuse. Insignificant influences of co-existing cations and natural organic matter (NOM) were found on the adsorption of Pb(II) and Cu(II). All the results demonstrate that BAC@SiO2-EDTA is a potential adsorbent for metal ions in wastewater.

Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

Energy Technology Data Exchange (ETDEWEB)

Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

2011-03-15

The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

33 CFR 160.310 - Definitions.

Science.gov (United States)

2010-07-01

....310 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND... credential; (5) Transportation Worker Identification Credential (TWIC) issued by the Transportation Security... authority of the government of a country that has ratified the International Labour Organization Seafarers...

Dynamic adsorption of mixtures of Rhodamine B, Pb (II), Cu (II) and Zn(II) ions on composites chitosan-silica-polyethylene glycol membrane

Science.gov (United States)

Mahatmanti, F. W.; Rengga, W. D. P.; Kusumastuti, E.; Nuryono

2018-04-01

The adsorption of a solution mixture of Rhodamine B, Pb (II), Cu (II) and Zn(II) was studied using dynamic methods employing chitosan-silica-polyethylene glycol (Ch/Si/P) composite membrane as an adsorptive membrane. The composite Ch/Si/P membrane was prepared by mixing a chitosan-based membrane with silica isolated from rice husk ash (ASP) and polyethylene glycol (PEG) as a plasticizer. The resultant composite membrane was a stronger and more flexible membrane than the original chitosan-based membrane as indicated by the maximum percentage of elongation (20.5 %) and minimum Young’s Modulus (80.5 MPa). The composite membrane also showed increased mechanical and hydrophilic properties compared to the chitosan membranes. The membrane was used as adsorption membrane for Pb (II), Cu (II), Cd (II) ions and Rhodamine B dyes in a dynamic system where the permeation and selectivity were determined. The permeation of the components was observed to be in the following order: Rhodamine B > Cd (II) > Pb (II) > Cu (II) whereas the selectivity was shown to decrease the order of Cu (II) > Pb (II) > Cd (II) > Rhodamine B.

10 CFR 603.310 - Use of an expenditure-based TIA.

Science.gov (United States)

2010-01-01

... 10 Energy 4 2010-01-01 2010-01-01 false Use of an expenditure-based TIA. 603.310 Section 603.310 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS TECHNOLOGY INVESTMENT AGREEMENTS... expenditure-based TIA. In general, the contracting officer must use an expenditure-based TIA under conditions...

40 CFR 310.24 - What happens if I provide incorrect or false information?

Science.gov (United States)

2010-07-01

... false information? 310.24 Section 310.24 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... § 310.24 What happens if I provide incorrect or false information? (a) You must not knowingly or recklessly make any statement or provide any information in your reimbursement application that is false...

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2010-07-15

We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

Pb(II), Cd(II) and Zn(II) adsorption on low grade manganese ore ...

African Journals Online (AJOL)

Low grade manganese ore (LMO) of Orissa containing 58.37% SiO2, 25.05% MnO2, 8.8% Al2O3, and 5.03% Fe2O3 as the main constituents was taken to study its adsorption behaviour for Pb(II), Cd(II) and Zn(II) from aqueous solutions. The XRD studies showed the crystalline phases to be quartz, ß-MnO2, d-MnO2 and ...

Final states in Si and GaAs via RF μSR spectroscopy

International Nuclear Information System (INIS)

Kreitzman, S.R.; Pfiz, T.; Riseman, T.M.; Brewer, J.H.; Williams, D.L.; Sun-Mack, S.; Estle, T.L.

1991-01-01

The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu * states at any temperature. However, our results on the diamagnetic final state (μ f + ) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu * and Mu. We observe a full μ f + fraction at 317 K when the Mu relaxation rate is above 10 μs -1 . GaAs differs from the situation in Si in that we observed only a partial conversion of Mu * and Mu to a μ + final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively. (orig.)

Final states in Si and GaAs via RF μSR spectroscopy

Science.gov (United States)

Kreitzman, S. R.; Pfiz, T.; Sun-Mack, S.; Riseman, T. M.; Brewer, J. H.; Williams, D. Ll.; Estle, T. L.

1991-02-01

The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ{f/+}) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ{f/+} fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively.

45 CFR 310.1 - What definitions apply to this part?

Science.gov (United States)

2010-10-01

... SERVICES COMPUTERIZED TRIBAL IV-D SYSTEMS AND OFFICE AUTOMATION General Provisions § 310.1 What definitions... 45 Public Welfare 2 2010-10-01 2010-10-01 false What definitions apply to this part? 310.1 Section...) Office Automation means a generic adjunct component of a computer system that supports the routine...

10 CFR 600.310 - Purpose of financial and program management.

Science.gov (United States)

2010-01-01

... 10 Energy 4 2010-01-01 2010-01-01 false Purpose of financial and program management. 600.310... Requirements § 600.310 Purpose of financial and program management. Sections 600.311 through 600.318 prescribe standards for financial management systems; methods for making payments; and rules for cost sharing and...

46 CFR 177.310 - Satisfactory service as a design basis.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Satisfactory service as a design basis. 177.310 Section... (UNDER 100 GROSS TONS) CONSTRUCTION AND ARRANGEMENT Hull Structure § 177.310 Satisfactory service as a design basis. When scantlings for the hull, deckhouse, and frames of the vessel differ from those...

Effect of irradiation on thermal expansion of SiCf/SiC composites

International Nuclear Information System (INIS)

Senor, D.J.; Trimble, D.J.; Woods, J.J.

1996-06-01

Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

Energy Technology Data Exchange (ETDEWEB)

Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

1996-08-01

Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H

International Nuclear Information System (INIS)

Poliani, E.; Somaschini, C.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Le Donne, A.; Binetti, S.; Pizzini, S.; Chrastina, D.; Isella, G.

2009-01-01

We report the effect of laser annealing on the structural and electronic properties of nc-Si/a-Si:H samples grown close to the amorphous to nanocrystalline transition. The nc-Si/a-Si:H thin films were produced by low-energy plasma-enhanced chemical vapor deposition through a gas discharge containing SiH 4 . The samples were subjected to different laser fluencies and were characterized for changes in their structural and electronic properties via Raman spectroscopy and photoluminescence measurements. The laser annealing effects are twofold: i) the nanocrystalline phase grows, during the laser treatment, respect to the amorphous phase; ii) the photoluminescence spectra show the suppression, after laser annealing, of the frequencies above the crystalline Si band-gap.

19 CFR 10.310 - Election to average for motor vehicles.

Science.gov (United States)

2010-04-01

... 19 Customs Duties 1 2010-04-01 2010-04-01 false Election to average for motor vehicles. 10.310... Free Trade Agreement § 10.310 Election to average for motor vehicles. (a) Election. In determining whether a motor vehicle is originating for purposes of the preferences under the Agreement or a Canadian...

16 CFR 310.7 - Actions by states and private persons.

Science.gov (United States)

2010-01-01

... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Actions by states and private persons. 310.7 Section 310.7 Commercial Practices FEDERAL TRADE COMMISSION REGULATIONS UNDER SPECIFIC ACTS OF CONGRESS... complaint and any other pleadings to be filed with the court. If prior notice is not feasible, the state or...

16 CFR 310.6 - Exemptions.

Science.gov (United States)

2010-01-01

...), and (c); (2) The sale of franchises subject to the Commission's Rule entitled “Disclosure Requirements and Prohibitions Concerning Franchising and Business Opportunity Ventures,” (“Franchise Rule”) 16 CFR... covered by the Franchise Rule, or advertisements involving goods or services described in §§ 310.3(a)(1...

Chemical diffusion of Cr, Ni and Si in welded joints. II

International Nuclear Information System (INIS)

Kucera, J.; Ciha, K.

1987-01-01

The results are given of a study in chemical diffusion in welded joints P2/A and P3/A. P2 stands for the steel (Fe-17.48 Cr-8.15 Ni-0.14 Si), P3 for (Fe-18.52 Cr-8.20 Ni-1.78 Si) and A for the Fe-Arema. Triadic sandwiche-like samples were diffusion heated at temperatures from 920 to 1170 degC. The concentration distributions N(x,t) of the given elements were measured with microprobe JXA-3A. The evaluation of the experimental data was carried out either by Grube's method, or in some cases by the spline-polynomial method. The evaluated diffusivities D-bar satisfy the Arrhenius relation and yield the standard diffusion characteristics D 0 and H. The diffusivities D-bar of Cr, Ni and Si in P1/A, in P2/A and P3/A welded joints vary with Si content in P1, P2 and P3 alloys, similar to the Cr-51 and Ni-63 self-diffusivities in Fe-18 Cr-12 Ni-X Si steels, and tend to increase with increasing Si content. The values D-bar measured in the vicinity of grain boundaries are higher than the bulk diffusion coefficients. The most rapid diffusant is Si and the slowest one Ni. Thus, the relations D-bar Si :D-bar Cr :D-bar Ni ≅ 6:3:1 (P3/A) and D-bar Si :D-bar Cr :D-bar Ni ≅ 1.7:1.4:1 (P3/A) are valid at 1050 degC. Comparing the results with those published if can be noted that the Cr-51 and Ni-63 self-diffusion in Fe-18 Cr-12 Ni-X Si steels is faster than chemical diffusion of these elements in the said steel welded joints P2/A and P3/A; X varies from 0.14 to 1.98. (author). 7 tabs., 7 figs., 20 refs

Oilfield automation with MRD-310 industrial 3G router

Energy Technology Data Exchange (ETDEWEB)

Anon.

2010-01-15

The SAM Well Manager is the most advanced technological solution for high precision monitoring and control of rod-pumping wells. It was developed by Lufkin-Automation to optimize pump performance and reliability. The company was formed by the merger of Delta X and Nabla Corporations, which are currently part of the oil field division, offering analysis, security and control solutions for rod pumping wells. The SAM Well Manager product is equipped with the Westermo MRD-310 3G router. It has been used in pilot projects in remote and harsh environments in Europe and Asia. The MRD-310 router has a very high level of connectivity and provides support for GSM, GPRS, 3G UMTS, HSDPA and HSUPA. It also supports IPSec encrypted VPN tunnels which is a requirement for safety critical applications that use unsecure public networks. In addition, the MRD-310 provides a serial interface and serial to IP conversion, which is required for connection to the controller. The router is used to analyze pump flow and calculate service and maintenance requirements before the event of mechanical failure. Energy consumption can also be optimized. This installation of the SAM Well Manager with MRD-310 industrial 3G router in several applications has demonstrated the potential for significant cost savings. 2 figs.

33 CFR 103.310 - Responsibilities of the Area Maritime Security (AMS) Committee.

Science.gov (United States)

2010-07-01

... disseminating appropriate security information to port stakeholders. ... Maritime Security (AMS) Committee. 103.310 Section 103.310 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY MARITIME SECURITY MARITIME SECURITY: AREA MARITIME SECURITY Area Maritime...

15 CFR 310.9 - Report of the Secretary on Federal participation.

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Report of the Secretary on Federal participation. 310.9 Section 310.9 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE MISCELLANEOUS REGULATIONS OFFICIAL U.S...

15 CFR 310.5 - Report of the Secretary on Federal recognition.

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Report of the Secretary on Federal recognition. 310.5 Section 310.5 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade (Continued) INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE MISCELLANEOUS REGULATIONS OFFICIAL U.S...

20 CFR 670.310 - How are entities selected to receive funding?

Science.gov (United States)

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false How are entities selected to receive funding? 670.310 Section 670.310 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF LABOR THE JOB CORPS UNDER TITLE I OF THE WORKFORCE INVESTMENT ACT Funding and Selection of Service...

7 CFR 900.310 - Supplementary instructions.

Science.gov (United States)

2010-01-01

... Conduct of Referenda To Determine Producer Approval of Milk Marketing Orders To Be Made Effective Pursuant to Agricultural Marketing Agreement Act of 1937, as Amended § 900.310 Supplementary instructions. The... Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing...

25 CFR 171.310 - Can I use water delivered by BIA for livestock purposes?

Science.gov (United States)

2010-04-01

... 25 Indians 1 2010-04-01 2010-04-01 false Can I use water delivered by BIA for livestock purposes? 171.310 Section 171.310 Indians BUREAU OF INDIAN AFFAIRS, DEPARTMENT OF THE INTERIOR LAND AND WATER IRRIGATION OPERATION AND MAINTENANCE Water Use § 171.310 Can I use water delivered by BIA for livestock...

21 CFR 201.310 - Phenindione; labeling of drug preparations intended for use by man.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 4 2010-04-01 2010-04-01 false Phenindione; labeling of drug preparations intended for use by man. 201.310 Section 201.310 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DRUGS: GENERAL LABELING Specific Labeling Requirements for Specific Drug Products § 201.310 Phenindione;...

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

20 CFR 1010.310 - How will priority of service be applied?

Science.gov (United States)

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false How will priority of service be applied? 1010.310 Section 1010.310 Employees' Benefits OFFICE OF THE ASSISTANT SECRETARY FOR VETERANS' EMPLOYMENT... covered persons at the point of entry, whether in person or virtual, so the covered person can be notified...

42 CFR 57.310 - Repayment and collection of nursing student loans.

Science.gov (United States)

2010-10-01

... exercise of due diligence, a school must follow procedures which are at least as extensive and effective as... 42 Public Health 1 2010-10-01 2010-10-01 false Repayment and collection of nursing student loans. 57.310 Section 57.310 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES...

38 CFR 41.310 - Financial statements.

Science.gov (United States)

2010-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 2 2010-07-01 2010-07-01 false Financial statements. 41...) AUDITS OF STATES, LOCAL GOVERNMENTS, AND NON-PROFIT ORGANIZATIONS Auditees § 41.310 Financial statements. (a) Financial statements. The auditee shall prepare financial statements that reflect its financial...

21 CFR 172.310 - Aluminum nicotinate.

Science.gov (United States)

2010-04-01

... and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) FOOD ADDITIVES PERMITTED FOR DIRECT ADDITION TO FOOD FOR HUMAN CONSUMPTION Special Dietary and Nutritional Additives § 172.310 Aluminum nicotinate. Aluminum nicotinate may be safely...

Surface Damage Mechanism of Monocrystalline Si Under Mechanical Loading

Science.gov (United States)

Zhao, Qingliang; Zhang, Quanli; To, Suet; Guo, Bing

2017-03-01

Single-point diamond scratching and nanoindentation on monocrystalline silicon wafer were performed to investigate the surface damage mechanism of Si under the contact loading. The results showed that three typical stages of material removal appeared during dynamic scratching, and a chemical reaction of Si with the diamond indenter and oxygen occurred under the high temperature. In addition, the Raman spectra of the various points in the scratching groove indicated that the Si-I to β-Sn structure (Si-II) and the following β-Sn structure (Si-II) to amorphous Si transformation appeared under the rapid loading/unloading condition of the diamond grit, and the volume change induced by the phase transformation resulted in a critical depth (ductile-brittle transition) of cut (˜60 nm ± 15 nm) much lower than the theoretical calculated results (˜387 nm). Moreover, it also led to abnormal load-displacement curves in the nanoindentation tests, resulting in the appearance of elbow and pop-out effects (˜270 nm at 20 s, 50 mN), which were highly dependent on the loading/unloading conditions. In summary, phase transformation of Si promoted surface deformation and fracture under both static and dynamic mechanical loading.

Isotopic effects in sub-barrier fusion of Si + Si systems

Science.gov (United States)

Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

2018-04-01

Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

International Nuclear Information System (INIS)

ZhongZhenyang; Chen Peixuan; Jiang Zuimin; Bauer, Guenther

2008-01-01

Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates

Recovery of hexagonal Si-IV nanowires from extreme GPa pressure

Energy Technology Data Exchange (ETDEWEB)

Smith, Bennett E. [Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States); Zhou, Xuezhe; Roder, Paden B. [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States); Abramson, Evan H. [Department of Earth and Space Sciences, University of Washington, Seattle, Washington 98195 (United States); Pauzauskie, Peter J., E-mail: peterpz@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States); Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-05-14

We use Raman spectroscopy in tandem with transmission electron microscopy and density functional theory simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's cylindrical morphology. In situ Raman scattering of the longitudinal transverse optical (LTO) mode demonstrates the high-pressure Si-I to Si-II phase transition near 9 GPa. Raman signal of the LTO phonon shows a decrease in intensity in the range of 9–14 GPa. Then, at 17 GPa, it is no longer detectable, indicating a second phase change (Si-II to Si-V) in the 14–17 GPa range. Recovery of exotic phases in individual silicon nanowires from diamond anvil cell experiments reaching 17 GPa is also shown. Raman measurements indicate Si-IV as the dominant phase in pressurized nanowires after decompression. Transmission electron microscopy and electron diffraction confirm crystalline Si-IV domains in individual nanowires. Computational electromagnetic simulations suggest that heating from the Raman laser probe is negligible and that near-hydrostatic pressure is the primary driving force for the formation of hexagonal silicon nanowires.

Synthesis and characterization in AuCu–Si nanostructures

International Nuclear Information System (INIS)

Novelo, T.E.; Amézaga-Madrid, P.; Maldonado, R.D.; Oliva, A.I.; Alonzo-Medina, G.M.

2015-01-01

Au/Cu bilayers with different Au:Cu concentrations (25:75, 50:50 and 75:25 at.%) were deposited on Si(100) substrates by thermal evaporation. The thicknesses of all Au/Cu bilayers were 150 nm. The alloys were prepared by thermal diffusion into a vacuum oven with argon atmosphere at 690 K during 1 h. X-ray diffraction analysis revealed different phases of AuCu and CuSi alloys in the samples after annealing process. CuSi alloys were mainly obtained for 25:75 at.% samples, meanwhile the AuCuII phase dominates for samples prepared with 50:50 at.%. Additionally, the Au:Cu alloys with 75:25 at.%, produce Au 2 Cu 3 and Au 3 Cu phases. The formed alloys were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) to study the morphology and the elemental concentration of the formed alloys. - Highlights: • AuCu/Si alloy thin films were prepared by thermal diffusion. • Alloys prepared with 50 at.% of Au produce the AuCuII phase. • Alloys prepared with 75 at.% of Au produce Au 3 Cu and Au 2 Cu 3 phases. • All alloys present diffusion of Si and Cu through the CuSi alloy formation

32 CFR 310.14 - Notification when information is lost, stolen, or compromised.

Science.gov (United States)

2010-07-01

... THE SECRETARY OF DEFENSE (CONTINUED) PRIVACY PROGRAM DOD PRIVACY PROGRAM Systems of Records § 310.14... the individual of any loss, theft, or compromise (See also, § 310.50 for reporting of the breach to Senior Component Official for Privacy and the Defense Privacy Office). (1) The notification shall be made...

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Science.gov (United States)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Probing α-3(10) transitions in a voltage-sensing S4 helix.

Science.gov (United States)

Kubota, Tomoya; Lacroix, Jérôme J; Bezanilla, Francisco; Correa, Ana M

2014-09-02

The S4 helix of voltage sensor domains (VSDs) transfers its gating charges across the membrane electrical field in response to changes of the membrane potential. Recent studies suggest that this process may occur via the helical conversion of the entire S4 between α and 310 conformations. Here, using LRET and FRET, we tested this hypothesis by measuring dynamic changes in the transmembrane length of S4 from engineered VSDs expressed in Xenopus oocytes. Our results suggest that the native S4 from the Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP) does not exhibit extended and long-lived 310 conformations and remains mostly α-helical. Although the S4 of NavAb displays a fully extended 310 conformation in x-ray structures, its transplantation in the Ci-VSP VSD scaffold yielded similar results as the native Ci-VSP S4. Taken together, our study does not support the presence of long-lived extended α-to-310 helical conversions of the S4 in Ci-VSP associated with voltage activation. Copyright © 2014 Biophysical Society. Published by Elsevier Inc. All rights reserved.

A 310-bp minimal promoter mediates smooth muscle cell-specific expression of telokin.

Science.gov (United States)

Smith, A F; Bigsby, R M; Word, R A; Herring, B P

1998-05-01

A cell-specific promoter located in an intron of the smooth muscle myosin light chain kinase gene directs transcription of telokin exclusively in smooth muscle cells. Transgenic mice were generated in which a 310-bp rabbit telokin promoter fragment, extending from -163 to +147, was used to drive expression of simian virus 40 large T antigen. Smooth muscle-specific expression of the T-antigen transgene paralleled that of the endogenous telokin gene in all smooth muscle tissues except uterus. The 310-bp promoter fragment resulted in very low levels of transgene expression in uterus; in contrast, a transgene driven by a 2.4-kb fragment (-2250 to +147) resulted in high levels of transgene expression in uterine smooth muscle. Telokin expression levels correlate with the estrogen status of human myometrial tissues, suggesting that deletion of an estrogen response element (ERE) may account for the low levels of transgene expression driven by the 310-bp rabbit telokin promoter in uterine smooth muscle. Experiments in A10 smooth muscle cells directly showed that reporter gene expression driven by the 2.4-kb, but not 310-bp, promoter fragment could be stimulated two- to threefold by estrogen. This stimulation was mediated through an ERE located between -1447 and -1474. Addition of the ERE to the 310-bp fragment restored estrogen responsiveness in A10 cells. These data demonstrate that in addition to a minimal 310-bp proximal promoter at least one distal cis-acting regulatory element is required for telokin expression in uterine smooth muscle. The distal element may include an ERE between -1447 and -1474.

33 CFR 149.310 - What are the muster and embarkation requirements for survival craft?

Science.gov (United States)

2010-07-01

... embarkation requirements for survival craft? 149.310 Section 149.310 Navigation and Navigable Waters COAST... and embarkation requirements for survival craft? Muster and embarkation arrangements for survival craft must comply with 46 CFR 108.540. ...

Intranasal delivery of antiviral siRNA.

Science.gov (United States)

Barik, Sailen

2011-01-01

Intranasal administration of synthetic siRNA is an effective modality of RNAi delivery for the prevention and therapy of respiratory diseases, including pulmonary infections. Vehicles used for nasal siRNA delivery include established as well as novel reagents, many of which have been recently optimized. In general, they all promote significant uptake of siRNA into the lower respiratory tract, including the lung. When properly designed and optimized, these siRNAs offer significant protection against respiratory viruses such as influenza virus, parainfluenza virus and respiratory syncytial virus (RSV). Nasally administered siRNA remains within the lung and does not access systemic blood flow, as judged by its absence in other major organs such as liver, heart, kidney, and skeletal muscle. Adverse immune reaction is generally not encountered, especially when immunogenic and/or off-target siRNA sequences and toxic vehicles are avoided. In fact, siRNA against RSV has entered Phase II clinical trials in human with promising results. Here, we provide a standardized procedure for using the nose as a specific route for siRNA delivery into the lung of laboratory animals. It should be clear that this simple and efficient system has enormous potential for therapeutics.

Formation of light-emitting nanostructures in layers of stoichiometric SiO{sub 2} irradiated with swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Kachurin, G. A., E-mail: kachurin@isp.nsc.ru; Cherkova, S. G. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation); Skuratov, V. A. [Joint Institute for Nuclear Research (Russian Federation); Marin, D. V.; Kesler, V. G.; Volodin, V. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2011-10-15

Thermally grown SiO{sub 2} layers have been irradiated with 700-MeV Bi ions with doses of (3-10) Multiplication-Sign 10{sup 12} cm{sup -2}. It is found that, even after a dose of 3 Multiplication-Sign 10{sup 12} cm{sup -2}, a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of {approx}5 Multiplication-Sign 10{sup 12} cm{sup -2}. The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO{sub 2} proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8-9 nm.

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

Science.gov (United States)

Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

1988-05-01

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

Martensitic Transformations and Mechanical and Corrosion Properties of Fe-Mn-Si Alloys for Biodegradable Medical Implants

Science.gov (United States)

Drevet, Richard; Zhukova, Yulia; Malikova, Polina; Dubinskiy, Sergey; Korotitskiy, Andrey; Pustov, Yury; Prokoshkin, Sergey

2018-03-01

The Fe-Mn-Si alloys are promising materials for biodegradable metallic implants for temporary healing process in the human body. In this study, three different compositions are considered (Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si, all in wt pct). The phase composition analysis by XRD reveals ɛ-martensite, α-martensite, and γ-austenite in various proportions depending on the manganese amount. The DSC study shows that the starting temperature of the martensitic transformation ( M s) of the alloys decreases when the manganese content increases (416 K, 401 K, and 323 K (143 °C, 128 °C, and 50 °C) for the Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si alloys, respectively). Moreover, mechanical compression tests indicate that these alloys have a much lower Young's modulus ( E) than pure iron (220 GPa), i.e., 145, 133, and 118 GPa for the Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si alloys, respectively. The corrosion behavior of the alloys is studied in Hank's solution at 310 K (37 °C) using electrochemical experiments and weight loss measurements. The corrosion kinetics of the Fe-Mn-Si increases with the manganese content (0.48, 0.59, and 0.80 mm/year for the Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si alloys, respectively). The alloy with the highest manganese content shows the most promising properties for biomedical applications as a biodegradable and biomechanically compatible implant material.

Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

Science.gov (United States)

Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

2013-07-01

The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

Consideration of the band-gap tunability of BaSi2 by alloying with Ca or Sr based on the electronic structure calculations

International Nuclear Information System (INIS)

Imai, Yoji; Watanabe, Akio

2007-01-01

The electronic structures and total energies of BaSi 2 -SrSi 2 and BaSi 2 -CaSi 2 systems have been calculated using the first-principle pseudopotential method to clarify the band gap tunability of BaSi 2 by alloying with Sr or Ca. From an energetic consideration of the compounds where all the Ba I sites or all the Ba II sites of the BaSi 2 lattice are preferentially replaced by Sr or Ca, it is expected that the Ba I site will be preferentially replaced by Sr rather than the Ba II sites. Compounds where all the Ba II sites are replaced by Sr or all the Ba II or all the Ba I sites are replaced by Ca are energetically unfavorable compared to the undissolved system of BaSi 2 and SrSi 2 or CaSi 2 . The effect of the addition of Sr or Ca into the BaSi 2 lattice on the gap value is different depending on the replaced sites of Ba. The replacement of Ba I site by Sr will broaden the band gap of BaSi 2 , which is consistent with the observed results

45 CFR 310.5 - What options are available for Computerized Tribal IV-D Systems and office automation?

Science.gov (United States)

2010-10-01

... IV-D Systems and office automation? 310.5 Section 310.5 Public Welfare Regulations Relating to Public... AUTOMATION Requirements for Computerized Tribal IV-D Systems and Office Automation § 310.5 What options are available for Computerized Tribal IV-D Systems and office automation? (a) Allowable computerized support...

Dynamic behaviors of laser ablated Si particles

International Nuclear Information System (INIS)

Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

1995-01-01

The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

31 CFR 594.310 - Specially designated global terrorist; SDGT.

Science.gov (United States)

2010-07-01

... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY GLOBAL TERRORISM SANCTIONS REGULATIONS General Definitions § 594.310 Specially designated global terrorist; SDGT. The term specially...

Feasibility study of a SiC sandwich neutron spectrometer

Energy Technology Data Exchange (ETDEWEB)

Wu, Jian, E-mail: caepwujian@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Lei, Jiarong, E-mail: jiarong_lei@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Jiang, Yong; Chen, Yu; Rong, Ru; Zou, Dehui; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Chen, Gang; Li, Li; Bai, Song [Nanjing Electronic Devices Institute, Nanjing 210016 (China)

2013-04-21

Semiconductor sandwich neutron spectrometers are suitable for in-pile measurements of fast reactor spectra thanks to their compact and relatively simple design. We have assembled and tested a sandwich neutron spectrometer based on 4H-silicon carbide (4H-SiC) Schottky diodes. The SiC diodes detect neutrons via neutron-induced charged particles (tritons and alpha particles) produced by {sup 6}Li(n,α){sup 3}H reaction. {sup 6}LiF neutron converter layers are deposited on the front surface of Schottky diodes by magnetron sputtering. The responses of SiC diodes to charged particles were investigated with an {sup 241}Am alpha source. A sandwich neutron spectrometer was assembled with two SiC Schottky diodes selected based on the charged-particle-response experimental results. The low-energy neutron response of the sandwich spectrometer was measured in the neutron field of the Chinese Fast Burst Reactor-II (CFBR-II). Spectra of alpha particles and tritons from {sup 6}Li(n,α){sup 3}H reaction were obtained with two well-resolved peaks. The energy resolution of the sum spectrum was 8.8%. The primary experimental results confirmed the 4H-SiC sandwich neutron spectrometer's feasibility. -- Highlights: ► Sandwich neutron spectrometer employing 4H-SiC as a detecting material has been developed for the first time. ► {sup 6}LiF neutron converter has been deposited on the surface of 4H-SiC Schottky diode. ► Preliminary testing results obtained with the 4H-SiC sandwich neutron spectrometer are presented.

15 CFR 310.4 - Action on application.

Science.gov (United States)

2010-01-01

... applications by the Director, complete with all exhibits required by § 310.3. (2) The financial plans of the... understanding of the issues which require clarification. The Director or Examiner shall impress upon the parties... that might have been raised by the application. (f) Statements of interested parties may be presented...

13 CFR 108.310 - Contents of application.

Science.gov (United States)

2010-01-01

... Section 108.310 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION NEW MARKETS VENTURE CAPITAL... Applicant must indicate— (1) The specific amount of Regulatory Capital it proposes to raise (which amount... of which must be not less than $1,500,000 or 30 percent of the Regulatory Capital it proposes to...

Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

Directory of Open Access Journals (Sweden)

M. Sommer

2013-07-01

Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION; F

International Nuclear Information System (INIS)

Paul K.T. Liu

2001-01-01

This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction

Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

International Nuclear Information System (INIS)

Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

1985-01-01

The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

Preliminary results from the oribiting solar observatory 8: Velocities in the solar chromosphere observed in the Si II lambda1816 line

International Nuclear Information System (INIS)

Chipman, E.G.; Bruner, E.C. Jr.; Shine, R.A.; Lites, B.W.; Rottman, G.J.; Athay, R.G.; White, O.R.

1976-01-01

The University of Colorado instrument on OSO-8 was used to measure repeated line profiles of the Si II lambda1816 line over quiet and active areas of approximately 20'' by 5'' during entire orbits of 60 minutes. Velocity oscillations with periods near 300 s are observed in approximately half of the time series, and periods near 180 s are sometimes observed. Periodic intensity variations are also observed at both of these periods. For both periods, the intensity leads the velocity in phase by approximately 30degree

Evaluation of a novel PTFE material for use as a means for separation and preconcentration of trace levels of metal ions in sequential injection (SI) and sequential injection lab-on-valve (SI-LOV) systems. Determination of cadmium (II) with detection by electrothermal atomic absorption spectrometry

DEFF Research Database (Denmark)

Long, Xiangbao; Chomchoei, Roongrat; Hansen, Elo Harald

2004-01-01

with an external packed column and in a sequential injection lab-on-valve (SI-LOV) system. Employed for the determination of cadmium(II), complexed with diethyldithiophosphate (DDPA), and detection by electrothermal atomic absorption spectrometry (ETAAS), its performance was compared to that of a previously used...

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Guo, Lina [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu, Shuang, E-mail: shuangliu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Falco, Charles M. [University of Arizona, College of Optical Sciences, AZ 85721 (United States)

2016-10-30

Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

International Nuclear Information System (INIS)

Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

2016-01-01

Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

41 CFR 101-8.310 - New construction.

Science.gov (United States)

2010-07-01

... 41 Public Contracts and Property Management 2 2010-07-01 2010-07-01 true New construction. 101-8... FINANCIAL ASSISTANCE 8.3-Discrimination Prohibited on the Basis of Handicap § 101-8.310 New construction. (a) Design and construction. Each facility or part of a facility constructed by, on behalf of, or for the use...

47 CFR 80.310 - Watch required by voluntary vessels.

Science.gov (United States)

2010-10-01

... Section 80.310 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES STATIONS IN THE MARITIME SERVICES Safety Watch Requirements and Procedures Ship Station Safety...] Distress, Alarm, Urgency and Safety Procedures ...

46 CFR 310.9 - Medical attention and injury claims.

Science.gov (United States)

2010-10-01

... Regulations and Minimum Standards for State, Territorial or Regional Maritime Academies and Colleges § 310.9... employees shall look to the State alone for pay, allowances, compensation and other benefits during injury...

Study on Formation Mechanism of Fayalite (Fe2SiO4) by Solid State Reaction in Sintering Process

Science.gov (United States)

Wang, Zhongbing; Peng, Bing; Zhang, Lifeng; Zhao, Zongwen; Liu, Degang; Peng, Ning; Wang, Dawei; He, Yinghe; Liang, Yanjie; Liu, Hui

2018-04-01

The sintering behaviors among SiO2, FeS and Fe3O4 were detected to reveal the formation mechanism of Fe2SiO4. The results indicated that the formation mechanism is divided into five steps: (1) migration of O2- induced by S2- under a reducing atmosphere; (2) formation of Fe3O4- β ; (3) migration of Fe(II) into a ferrite cluster structure to gain oxygen and form Fe3- x O4; (4) Fe(II) invaded the silicon atomic position and released Si(IV); and (5) formation of the stable structure of Fe2SiO4 through chemical diffusion between cations of Fe(II) and Si(IV). These findings can provide theoretical support for controlling the process of the recovery of valuable metals in copper slag through the combined roasting modification-magnetic separation process.

Magnetic ion-imprinted and –SH functionalized polymer for selective removal of Pb(II) from aqueous samples

Energy Technology Data Exchange (ETDEWEB)

Guo, Bin; Deng, Fang [Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063 (China); Zhao, Yu [Technology Center of China Tobacco Hunan Industrial Corporation, Changsha 410007 (China); Luo, Xubiao, E-mail: luoxubiao@126.com [Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063 (China); Luo, Shenglian, E-mail: sllou@hnu.edu.cn [Key Laboratory of Jiangxi Province for Persistent Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063 (China); Au, Chaktong [Department of Chemistry, Hong Kong Baptist University, Kowloon Tong, Hong Kong (China)

2014-02-15

A magnetic ion-imprinted polymer (Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP) functionalized with –SH groups for the selective removal of Pb(II) ions from aqueous samples was synthesized by surface imprinting technique combined with a sol–gel process using 3-mercaptopropyl trimethoxysilane as monomer, tetraethyl orthosilicate as cross-linking agent, and Pb(II) ion as template. The Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP was characterized by infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and energy dispersive spectrometry. Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP showed higher capacity and selectivity than that of Fe{sub 3}O{sub 4}@SiO{sub 2}-NIP. The effects of initial concentration of Pb(II) and pH of medium on adsorption capacity of Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP were studied. The experimental data fits well with the Langmuir adsorption isotherm. The maximum Pb(II)-sorption capacity calculated from Langmuir isotherm is 32.58 mg/g and 16.50 mg/g for Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP and Fe{sub 3}O{sub 4}@SiO{sub 2}-NIP, respectively. Kinetics studies show that the adsorption process obeys a pseudo-second-order kinetic model with high correlation coefficient (R{sup 2} = 0.9982). The separation factor of Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP for Pb(II)/Cu(II), Pb(II)/Zn(II), and Pb(II)/Co(II) are 50.54, 52.14, and 37.39, respectively. The adsorption thermodynamic parameters ΔG, ΔH and ΔS were −4.98 kJ/mol, 3.27 kJ/mol and 28.84 J/mol/K, respectively. In addition, the spent Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP can be refreshed by simple washing with aqueous HCl solution, and there is no significant decrease in adsorption capacity after a test of up to five cycles, demonstrating that the Fe{sub 3}O{sub 4}@SiO{sub 2}-IIP is stable and reusable.

Corroboration of Raman and AFM mapping to study Si nanocrystals embedded in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Rani, Ekta, E-mail: ades.ekta@gmail.com [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Ingale, Alka A. [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M.P.; Kukreja, L.M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

2016-07-05

Raman and atomic force microscopy (AFM) mapping on the same selected area are used to get unique information about the morphology of Si nanocrystals (NCs) embedded in SiO{sub 2}, which is difficult to obtain by any other conventional technique. The sensitivity of Raman spectroscopy to surface/interface and confinement effects in NCs is effectively used to correlate the Raman intensity profile in Raman mapping with the topography obtained from AFM to understand that Si NCs are clustered in i) smaller clusters (∼100 nm) organized closely in two dimensions (2D) and ii) big (∼2 μm) three dimensional (3D) isolated clusters, although the growth is carried out to be multilayer (Si/SiO{sub 2}). Raman mapping performed by varying the focal spot along the depth shows stacking of larger (>∼60 Å) to smaller sizes (<∼40 Å) Si NCs from bottom to top for some clusters. To understand the observed morphologies, further study of specially grown Si–SiO{sub 2} nanocomposites is performed, which suggest formation of smaller Si NCs at the top due to annealing at 800 °C in Si rich SiO{sub 2} and possible existence of thermal gradient in an insulating matrix of SiO{sub 2.} Larger Si NCs are formed in the laser induced plume (plasma) itself. - Graphical abstract: a) Schematic showing the expected stacking of Si NCs obtained from Raman mapping, performed by changing focal spot along the depth, b) top, c) middle and d) bottom region of the cluster. - Highlights: • Methodology is developed to obtain Raman and AFM mapping at same selected area. • To get unique information, difficult to obtain using other conventional techniques. • Clusters (∼100 nm–2 μm) of Si nanocrystals embedded in SiO{sub 2} matrix are formed. • Stacking of Si nanocrystals from bottom to top (10–1 nm) is observed in some clusters. • Stacking of Si nanocrystals is understood as due to annealing and thermal gradient.

Propyl phthalimide-modified thiacalixphenyl[4]arene as a “turn on” chemosensor for Hg(II) ions

Energy Technology Data Exchange (ETDEWEB)

Modi, Krunal; Panchal, Urvi; Mehta, Viren; Panchal, Manthan; Kongor, Anita; Jain, V.K., E-mail: drvkjain@hotmail.com

2016-11-15

Thiacalixphenyl[4]arene tetra N-(3-propyl) phthalimide (TPTN3PPh), a novel thiacalixarene bearing a N-(3-bromopropyl) phthalimide group, was synthesized and characterized by Electrospray Ionization Mass Spectrometry (ESI-MS) and NMR. The ability of TPTN3PPh to recognize the cations Fe(III), Cu(II), Cd(II), Zn(II), Cr(II), Ca(II), Co(II), Mg(II), Ag(I), Pb(II), Sr(II), Hg (II), Th(II), Ba(II), Bi(II), K(I), and Na(I) was evaluated. Only Hg(II) was selectively and sensitively detected using a spectrofluorimetric method, with a detection limit as low as 3.10×10{sup −9} M. Analysis of the binding behavior of TPTN3PPh with Hg(II) revealed 1:2 complex formation. Real sample analysis detected nano levels of mercury ions in a waste water samples.

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

Science.gov (United States)

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

32 CFR 310.33 - New and altered record systems.

Science.gov (United States)

2010-07-01

... such as tape devices, disk devices, card readers, printers, and similar devices to an existing IT... master registry contains a current system notice for the system. (see § 310.32(q)). (2) The DPO...

Ozone decomposition on Ag/SiO2 and Ag/clinoptilolite catalysts at ambient temperature

International Nuclear Information System (INIS)

Nikolov, Penko; Genov, Krassimir; Konova, Petya; Milenova, Katya; Batakliev, Todor; Georgiev, Vladimir; Kumar, Narendra; Sarker, Dipak K.; Pishev, Dimitar; Rakovsky, Slavcho

2010-01-01

Silver modified zeolite (Bulgarian natural clinoptilolite) and Ag/silica catalysts were synthesized by ion exchange and incipient wet impregnation method respectively and characterized by different techniques. DC arc-AES was used for Ag detection. XRD spectra show that Ag is loaded over the surface of the SiO 2 sample and that after the ion-exchange process the HEU type structure of clinoptilolite is retained. UV-VIS (specific reflection at 310 nm) and IR (band at 695 cm -1 ) spectroscopy analysis proved that silver is loaded as a T-atom into zeolite channels as Ag + , instead of Na + , Ca 2+ , or K + ions, existing in the natural clinoptilolite form. The samples Ag/SiO 2 and Ag-clinoptilolite were tested as catalysts for decomposition of gas phase ozone. Very high catalytic activity (up to 99%) was observed and at the same time the catalysts remained active over time at room temperature.

Revision of the Li13Si4 structure.

Science.gov (United States)

Zeilinger, Michael; Fässler, Thomas F

2013-11-06

Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

THE DISCOVERY OF RAMAN SCATTERING IN H II REGIONS

Energy Technology Data Exchange (ETDEWEB)

Dopita, Michael A.; Nicholls, David C.; Sutherland, Ralph S.; Kewley, Lisa J.; Groves, Brent A., E-mail: Michael.Dopita@anu.edu.au [Research School of Astronomy and Astrophysics, Australian National University, Canberra, ACT 2611 (Australia)

2016-06-10

We report here on the discovery of faint extended wings of H α observed out to an apparent velocity of ∼7600 km s{sup −1} in the Orion Nebula (M42) and in five H ii regions in the Large and the Small Magellanic Clouds. We show that these wings are caused by Raman scattering of both the O i and Si ii resonance lines and stellar continuum UV photons with H i followed by radiative decay to the H i n = 2 level. The broad wings also seen in H β and in H γ result from Raman scattering of the UV continuum in the H i n = 4 and n = 5 levels, respectively. The Raman scattering fluorescence is correlated with the intensity of the narrow permitted lines of O i and Si ii. In the case of Si ii, this is explained by radiative pumping of the same 1023.7 Å resonance line involved in the Raman scattering by the Ly β radiation field. The subsequent radiative cascade produces enhanced Si ii λλ 5978.9, 6347.1, and 6371.4 Å permitted transitions. Finally, we show that in O i, radiative pumping of the 1025.76 Å resonance line by the Lyman series radiation field is also the cause of the enhancement in the permitted lines of this species lying near H α in wavelength, but here the process is a little more complex. We argue that all these processes are active in the zone of the H ii region near the ionization front.

42 CFR 421.310 - Conflict of interest requirements.

Science.gov (United States)

2010-10-01

... 42 Public Health 3 2010-10-01 2010-10-01 false Conflict of interest requirements. 421.310 Section... Conflict of interest requirements. Offerors for MIP contracts and MIP contractors are subject to the following: (a) The conflict of interest standards and requirements of the Federal Acquisition Regulation...

9 CFR 310.5 - Condemned carcasses and parts to be so marked; tanking; separation.

Science.gov (United States)

2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Condemned carcasses and parts to be so marked; tanking; separation. 310.5 Section 310.5 Animals and Animal Products FOOD SAFETY AND INSPECTION... marked shall be placed immediately in trucks or receptacles which shall be kept plainly marked “U.S...

Electrochemical performance of Si-multiwall carbon nanotube nanocomposite anode synthesized by thermal plasma

Energy Technology Data Exchange (ETDEWEB)

Na, Ye-Seul; Yoo, Hyeonseok; Kim, Tae-Hee; Choi, Jinsub; Lee, Wan In; Choi, Sooseok, E-mail: sooseok@jejunu.ac.kr; Park, Dong-Wha, E-mail: dwpark@inha.ac.kr

2015-07-31

Lithium-ion (Li-ion) batteries are widely used in electric devices and vehicles. Silicon is a promising material for the anode of Li-ion battery due to high theoretical specific capacity. However, it shows large volume changes during charge–discharge cycles leading to the pulverization of electrode. In order to improve such disadvantage, a multiwall carbon nanotube (MWCNT) has been used with silicon as composite material. In this work, Si-MWCNT nanocomposite was prepared in thermal plasma by attaching silicon nanoparticles to MWCNT column. Electrochemical tests for raw materials and synthesized nanocomposites were carried out. The discharge capacities of silicon, MWCNT, synthesized nanocomposites collected from a reaction tube, and a chamber were 4000, 310, 200, and 1447 mAh/g, respectively. - Highlights: • Si-Multiwall carbon nanotube nanocomposite was synthesized by thermal plasma. • The effect on the collection position of product after experiment was examined. • Cycle performance of electrodes was measured. • Product collected from chamber showed good electrochemical performance.

Dynamika kształtowania się struktury narodowościowej Białorusi po II wojnie światowej

Directory of Open Access Journals (Sweden)

Eugeniusz Mironowicz

2017-12-01

Full Text Available The dynamics of development of the ethnic structure of Belarus after World War II During the Second World War, Belarus lost more than 1.5 million inhabitants. In 1944–1946, as part of the repatriation process, 226,000 Poles left for Poland. With the construction industry in Belarus, deploying units of the Red Army and the creation of the Soviet system of government, to Belarus poured in hundreds of thousands of Russians and dozens of thousands of Ukrainians. At the same time, the Soviet authorities pursue policies conducive to resettlement Belarusians to other republics, especially to Russia. Widespread census was held every 10 years since 1959. It shows a systematic process of strengthening the Russian factor in the ethnic structure of the Belarusian Soviet Socialist Republic. This was accompanied by assimilation in Russian culture of the Belarusian youth, expelling from the countryside to the cities. The creation of the independent Belarusian state after the collapse of the Soviet Union reversed these trends. The percentage of people declaring Russian nationality, but also Jewish, Ukrainian and Polish, began to rapidly decline in the ethnic structure. This was accompanied, however, by a stronger presence of the Russian language, both in the public and private life of people in Belarus.   Dynamika kształtowania się struktury narodowościowej Białorusi po II wojnie światowej W czasie II wojny światowej Białoruś utraciła ponad 1,5 mln mieszkańców. W latach 1944–1946 w ramach akcji repatriacyjnej do Polski wyjechało 226 tys. Polaków. Wraz z budową przemysłu na Białorusi, rozmieszczaniem jednostek Armii Czerwonej i tworzeniem radzieckiego systemu władzy do Białorusi napływały setki tysięcy Rosjan i dziesiątki tysięcy Ukraińców. Jednocześnie władze radzieckie prowadziły politykę sprzyjającą przesiedlaniu Białorusinów do innych republik, a zwłaszcza do Rosji. Powszechne spisy ludności organizowane co 10 lat od

20 CFR 669.310 - What are the basic components of an NFJP service delivery strategy?

Science.gov (United States)

2010-04-01

... include: (a) A customer-centered case management approach; (b) The provision of workforce investment... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What are the basic components of an NFJP service delivery strategy? 669.310 Section 669.310 Employees' Benefits EMPLOYMENT AND TRAINING...

Revision of the Li13Si4 structure

Directory of Open Access Journals (Sweden)

Thomas F. Fässler

2013-12-01

Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

Semiconductor nanocrystals formed in SiO2 by ion implantation

International Nuclear Information System (INIS)

Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

1994-11-01

Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Science.gov (United States)

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

24 CFR 3285.310 - Pier location and spacing.

Science.gov (United States)

2010-04-01

... URBAN DEVELOPMENT MODEL MANUFACTURED HOME INSTALLATION STANDARDS Foundations § 3285.310 Pier location... vertical or horizontal design loads. 5. When a full-height mating wall does not support the ridge beam... wall that are less than 48 inches in width. Place piers on both sides of mating wall openings that are...

21 CFR 111.310 - What are the requirements for the laboratory facilities that you use?

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false What are the requirements for the laboratory facilities that you use? 111.310 Section 111.310 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION CURRENT GOOD MANUFACTURING PRACTICE IN...

A novel approach for rapid screening of mitochondrial D310 polymorphism

International Nuclear Information System (INIS)

Aral, Cenk; Kaya, Handan; Ataizi-Çelikel, Çiğdem; Akkiprik, Mustafa; Sönmez, Özgür; Güllüoğlu, Bahadır M; Özer, Ayşe

2006-01-01

Mutations in the mitochondrial DNA (mtDNA) have been reported in a wide variety of human neoplasms. A polynucleotide tract extending from 303 to 315 nucleotide positions (D310) within the non-coding region of mtDNA has been identified as a mutational hotspot of primary tumors. This region consists of two polycytosine stretches interrupted by a thymidine nucleotide. The number of cytosines at the first and second stretches are 7 and 5 respectively, according to the GeneBank sequence. The first stretch exhibits a polymorphic length variation (6-C to 9-C) among individuals and has been investigated in many cancer types. Large-scale studies are needed to clarify the relationship between cytosine number and cancer development/progression. However, time and money consuming methods such as radioactivity-based gel electrophoresis and sequencing, are not appropriate for the determination of this polymorphism for large case-control studies. In this study, we conducted a rapid RFLP analysis using a restriction enzyme, BsaXI, for the single step simple determination of 7-C carriers at the first stretch in D310 region. 25 colorectal cancer patients, 25 breast cancer patients and 41 healthy individuals were enrolled into the study. PCR amplification followed by restriction enzyme digestion of D310 region was performed for RFLP analysis. Digestion products were analysed by agarose gel electrophoresis. Sequencing was also applied to samples in order to confirm the RFLP data. Samples containing 7-C at first stretch of D310 region were successfully determined by the BsaXI RFLP method. Heteroplasmy and homoplasmy for 7-C content was also determined as evidenced by direct sequencing. Forty-one percent of the studied samples were found to be BsaXI positive. Furthermore, BsaXI status of colorectal cancer samples were significantly different from that of healthy individuals. In conclusion, BsaXI RFLP analysis is a simple and rapid approach for the single step determination of D310

Single-crystal X-ray diffraction study of Cs2Er[Si6O14]F and Cs2Er[Si4O10]F

International Nuclear Information System (INIS)

Dabic, Predrag; Kremenovic, Aleksandar; Vulic, Predag; Kahlenberg, Volker; Schmidmair, Daniela

2016-01-01

Single-crystal growth experiments in the system CsF-Er 2 O 3 -SiO 2 resulted in the simultaneous crystallization of two chemically related compounds within the same run: Cs 2 Er[Si 6 O 14 ]F (phase I) and Cs 2 Er[Si 4 O 10 ]F (phase II). They represent the first examples for cesium erbium silicates containing fluorine. Basic crystallographic data are - phase I: space group Cmca, a=17.2556(6) Aa, b=24.6565(7) Aa, c=14.4735(5) Aa, V=6157.9(3) Aa 3 , Z=16; phase II: space group Pnma, a=22.3748(7) Aa, b=8.8390(2) Aa, c=11.9710(4) Aa, V=2367.5(1) Aa 3 , Z=8. The structures were determined by direct methods and refined to residuals of R(vertical stroke F vertical stroke)=0.0229 for 2920 (phase I) and 0.0231 for 2314 (phase II) independent observed reflections with I>2σ(I). The structure of phase I represents a previously unknown structure type with a three dimensional tetrahedral framework consisting of Q 3 and Q 4 groups in the ratio 2:1. Basic building units of the network are unbranched sechser single-chains running parallel to [001]. The network can be conveniently built up from the condensation of tetrahedral layers parallel to (010) or (100), respectively. The crystal structure of phase II can be classified as a tubular or columnar chain silicate indicating that the backbones of the structure are multiple chains of silicate tetrahedra. This structure is isotypic to a Cs 2 Y[Si 4 O 10 ]F, a compound that has been characterized previously. Alternatively, both compounds can be described as mixed octahedral-tetrahedral frameworks, which can be classified according to their polyhedral microensembles. A topological analysis of both nets is presented.

Microstructures and Tensile Properties of Al–Cu Matrix Composites Reinforced with Nano-Sized SiCp Fabricated by Semisolid Stirring Process

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Feng Qiu

2017-02-01

Full Text Available The nano-sized SiCp/Al–Cu composites were successfully fabricated by combining semisolid stirring with ball milling technology. Microstructures were examined by an olympus optical microscope (OM, field emission scanning electron microscope (FESEM and transmission electron microscope (TEM. Tensile properties were studied at room temperature. The results show that the α-Al dendrites of the composites were strongly refined, especially in the composite with 3 wt. % nano-sized SiCp, of which the morphology of the α-Al changes from 200 μm dendritic crystal to 90 μm much finer equiaxial grain. The strength and ductility of the composites are improved synchronously with the addition of nano-sized SiCp particles. The as-cast 3 wt. % nano-sized SiCp/Al–Cu composite displays the best tensile properties, i.e., the yield strength, ultimate tensile strength (UTS and fracture strain increase from 175 MPa, 310 MPa and 4.1% of the as-cast Al–Cu alloy to 220 MPa, 410 MPa and 6.3%, respectively. The significant improvement in the tensile properties of the composites is mainly due to the refinement of the α-Al dendrites, nano-sized SiCp strengthening, and good interface combination between the SiCp and Al–Cu alloys.

40 CFR 310.15 - How do I apply for reimbursement?

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2010-07-01

... RESPONSE TO HAZARDOUS SUBSTANCE RELEASES Provisions How to Get Reimbursed § 310.15 How do I apply for... Management, Office of Solid Waste and Emergency Response, Environmental Protection Agency, 1200 Pennsylvania...

28 CFR 36.310 - Transportation provided by public accommodations.

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2010-07-01

... 28 Judicial Administration 1 2010-07-01 2010-07-01 false Transportation provided by public... BASIS OF DISABILITY BY PUBLIC ACCOMMODATIONS AND IN COMMERCIAL FACILITIES Specific Requirements § 36.310 Transportation provided by public accommodations. (a) General. (1) A public accommodation that provides...

Electrosynthesis of Ti5Si3, Ti5Si3/TiC, and Ti5Si3/Ti3SiC2 from Ti-Bearing Blast Furnace Slag in Molten CaCl2

Science.gov (United States)

Li, Shangshu; Zou, Xingli; Zheng, Kai; Lu, Xionggang; Chen, Chaoyi; Li, Xin; Xu, Qian; Zhou, Zhongfu

2018-04-01

Ti5Si3, Ti5Si3/TiC, and Ti5Si3/Ti3SiC2 have been electrochemically synthesized from the Ti-bearing blast furnace slag/TiO2 and/or C mixture precursors at a cell voltage of 3.8 V and 1223 K to 1273 K (950 °C to 1000 °C) in molten CaCl2. The pressed porous mixture pellets were used as the cathode, and a solid oxide oxygen-ion-conducting membrane (SOM)-based anode was used as the anode. The phase composition and morphologies of the cathodic products were systematically characterized. The final products possess a porous nodular microstructure due to the interconnection of particles. The variations of impurity elements, i.e., Ca, Mg, and Al, have been analyzed, and the result shows that Ca and Mg can be almost completely removed; however, Al cannot be easily removed from the pellet due to the formation of Ti-Al alloys during the electroreduction process. The electroreduction process has also been investigated by the layer-depended phase composition analysis of the dipped/partially reduced pellets to understand the detailed reaction process. The results indicate that the electroreduction process of the Ti-bearing blast furnace slag/TiO2 and/or C mixture precursors can be typically divided into four periods, i.e., (i) the decomposition of initial Ca(Mg,Al)(Si,Al)2O6, (ii) the reduction of Ti/Si-containing intermediate phases, (iii) the removal of impurity elements, and (iv) the formation of Ti5Si3, TiC, and Ti3SiC2. It is suggested that the SOM-based anode process has great potential to be used for the direct and facile preparation of Ti alloys and composites from cheap Ti-containing ores.

Design, fabrication and transportation of Si rotating device

International Nuclear Information System (INIS)

Kimura, Nobuaki; Imaizumi, Tomomi; Takemoto, Noriyuki; Tanimoto, Masataka; Saito, Takashi; Hori, Naohiko; Tsuchiya, Kunihiko; Romanova, Nataliya; Gizatulin, Shamil; Martyushov, Alexandr; Nakipov, Darkhan; Chakrov, Petr; Tanaka, Futoshi; Nakajima, Takeshi

2012-06-01

Si semiconductor production by Neutron Transmutation Doping (NTD) method using the Japan Materials Testing Reactor (JMTR) has been investigated in Neutron Irradiation and Testing Reactor Center, Japan Atomic Energy Agency (JAEA) in order to expand industry use. As a part of investigations, irradiation test of silicon ingot for development of NTD-Si with high quality was planned using WWR-K in Institute of Nuclear Physics (INP), National Nuclear Center of Republic of Kazakhstan (NNC-RK) based on one of specific topics of cooperation (STC), Irradiation Technology for NTD-Si (STC No.II-4), on the implementing arrangement between NNC-RK and the JAEA for 'Nuclear Technology on Testing/Research Reactors' in cooperation in research and development in nuclear energy and technology. As for the irradiation test, Si rotating device was fabricated in JAEA, and the fabricated device was transported with irradiation specimens from JAEA to INP-NNC-RK. This report described the design, the fabrication, the performance test of the Si rotating device and transportation procedures. (author)

A six-membered-ring incorporated Si-rhodamine for imaging of copper(ii) in lysosomes.

Science.gov (United States)

Wang, Baogang; Cui, Xiaoyan; Zhang, Zhiqiang; Chai, Xiaoyun; Ding, Hao; Wu, Qiuye; Guo, Zhongwu; Wang, Ting

2016-07-12

The regulation of copper homeostasis in lysosomes of living cells is closely related to various physiological and pathological processes. Thus, it is of urgent need to develop a fluorescent probe for selectively and sensitively monitoring the location and concentration of lysosomal Cu(2+). Herein, a six-membered ring, thiosemicarbazide, was incorporated into a Si-rhodamine (SiR) scaffold for the first time, affording a SiR-based fluorescent probe SiRB-Cu. Through the effective Cu(2+)-triggered ring-opening process, the probe exhibits fast NIR chromogenic and fluorogenic responses to Cu(2+) within 2 min as the result of formation of a highly fluorescent product SiR-NCS. Compared with a five-membered ring, the expanded ring retains great tolerance to H(+), ensuring the superior sensitivity with a detection limit as low as 7.7 nM and 200-fold enhancement of relative fluorescence in the presence of 1.0 equiv. of Cu(2+) in pH = 5.0 solution, the physiological pH of lysosome. Moreover, the thiosemicarbazide moiety acts not only as the chelating and reactive site, but also as an efficient lysosome-targeting group, leading to the proactive accumulation of the probe into lysosomes. Taking advantage of these distinct properties, SiRB-Cu provides a functional probe suitable for imaging exogenous and endogenous lysosomal Cu(2+) with high imaging contrast and fidelity.

40 CFR 310.4 - What abbreviations should I know?

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2010-07-01

... RESPONSE TO HAZARDOUS SUBSTANCE RELEASES General Information § 310.4 What abbreviations should I know? The.... 11000-11050). LEPC—Local Emergency Planning Committee. NCP—National Oil and Hazardous Substances... Response Center. OMB—Office of Management and Budget. PRP—Potentially Responsible Party. SARA—The Superfund...

45 CFR 310.15 - What are the safeguards and processes that comprehensive Tribal IV-D agencies must have in place...

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2010-10-01

... 45 Public Welfare 2 2010-10-01 2010-10-01 false What are the safeguards and processes that... IV-D Systems and Office Automation? 310.15 Section 310.15 Public Welfare Regulations Relating to... AND OFFICE AUTOMATION Requirements for Computerized Tribal IV-D Systems and Office Automation § 310.15...

Hopping conduction on PPy/SiO2 nanocomposites obtained via in situ emulsion polymerization

NARCIS (Netherlands)

Rubinger, C.P.L.; Costa, L.C.; Carvalho Esteves, de A.C.; Barros-Timmons, A.M.M.V.

2008-01-01

This work describes the preparation and electrical characterization of conducting polypyrrole (PPy) and silica nanocomposites. Four samples were investigated: (i) pure PPy, (ii) PPy-covered SiO2 spherical nanoparticles, (iii) PPy-covered SiO2 spherical nanoparticles modified with

43 CFR 46.310 - Contents of an environmental assessment.

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2010-10-01

... implementation without the need for further analysis. Adaptive management includes a monitoring component... 43 Public Lands: Interior 1 2010-10-01 2010-10-01 false Contents of an environmental assessment... OF THE NATIONAL ENVIRONMENTAL POLICY ACT OF 1969 Environmental Assessments § 46.310 Contents of an...

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

Science.gov (United States)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

340 and 310 drawing field verification

International Nuclear Information System (INIS)

Langdon, J.

1996-01-01

The purpose of the drawing field verification work plan is to provide reliable drawings for the 310 Treated Effluent Disposal Facility (TEDF) and 340 Waste Handling Facility (340 Facility). The initial scope of this work plan is to provide field verified and updated versions of all the 340 Facility essential drawings. This plan can also be used for field verification of any other drawings that the facility management directs to be so updated. Any drawings revised by this work plan will be issued in an AutoCAD format

Si cycling in a forest biogeosystem - the importance of anthropogenic perturbation and induced transient state of biogenic Si pools

Science.gov (United States)

Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Puppe, D.; Wanner, M.; Kaczorek, D.

2012-12-01

The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to total DSi (Gerard et~al., 2008). However, the actual number of biogeosystem studies is rather limited for generalised conclusions. To cover one end of controlling factors on DSi - weatherable minerals content - we studied a~forested site with absolute quartz dominance (> 95%). Hence, we hypothesise minimal effects of chemical weathering of silicates on DSi. During a~four year observation period (May 2007-April 2011) we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (vers. ZALF), (ii) related Si budgets, and, (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time both compartments of biogenic Si in soils were analysed, i.e. phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. High DSi concentrations (6 mg l-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic phytolith Si pool seems to be the main process for the DSi observed. We identified forest management, i.e. selective extraction of pine trees 20 yr ago followed by a disappearance of grasses, as the most probable control for the phenomena observed and hypothesised the biogeosystem to be in a transient state in terms of Si cycling.

Tensions, Réformes et Recherche du consensus: Vatican II dans l’itinéraire de l’Église catholique au XXe siècle - DOI: 10.5752/P.2175-5841.2011v9n24p963

Directory of Open Access Journals (Sweden)

Gilles Routhier

2012-02-01

Full Text Available Tensions, Réformes et Recherche du consensus: Vatican II dans l’itinéraire de l’Église catholique au XXe siècle(Tensions, reforms and consensus : Vatican II in the itinerary of the Catholic Church in the twentieth centuryRésumé Contrairement à ce que l’on affirme parfois, les tensions que l’on retrouve dans l’Église catholique au moment de la réception du concile ne sont pas nées avec le concile, mais s’enracinent au cours du siècle qui précéda Vatican II. Elles portent principalement sur le rapport de l’Église catholique au monde moderne. À Vatican II, si les Pères conciliaires ont été d’accord pour généraliser et accélérer l’effort de mise à jour de l’Église entamée depuis quelques décennies, quelques-uns ont refusé le discernement opéré par l’Église catholique sur l’enseignement des papes, depuis Pie IX, sur le rapport de l’Église avec le monde moderne. Les évêques appartenant à la majorité ont estimé qu’il fallait re-recevoir ces enseignements portés dans des circonstances historiques différentes, et les apprécier à la lumière des situations nouvelles dans lesquelles évoluait désormais l’Église catholique. L’opposition actuelle au concile refuse ce discernement et voudrait, par-delà le concile, revenir aux positions tenues au XIXe siècle. Mots-clés: Vatican II; L’Église Catholique. XXe siècle. Tensions. Réformes. Consensus Abstract To the contrary of what is commonly said, the tensions in the Catholic Church at the time of reception of the Council did not originate within the council, but are rooted in the course of the century prior to Vatican II. These tensions relate mainly to the relationship of the Catholic Church with the modern world. If the Fathers of the Second Vatican agreed to upgrade the Church, after a few decades some priests refused to follow the teachings of the Popes about the relationship of the Church with the modern world. Most bishops

Ozone decomposition on Ag/SiO{sub 2} and Ag/clinoptilolite catalysts at ambient temperature

Energy Technology Data Exchange (ETDEWEB)

Nikolov, Penko, E-mail: penmail@mail.bg [Institute of Catalysis, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Genov, Krassimir; Konova, Petya [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Milenova, Katya; Batakliev, Todor; Georgiev, Vladimir [Institute of Catalysis, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Kumar, Narendra [Laboratory of Industrial Chemistry, Process Chemistry Centre, Abo Akademi University, Biskopsgatan 8, 20500 Abo/Turku (Finland); Sarker, Dipak K. [School of Pharmacy and Biomolecular Sciences, University of Brighton, Lewes Road, Brighton BN2 4GJ (United Kingdom); Pishev, Dimitar [University of Chemical Technology and Metallurgy, 1756 Sofia (Bulgaria); Rakovsky, Slavcho [Institute of Catalysis, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria)

2010-12-15

Silver modified zeolite (Bulgarian natural clinoptilolite) and Ag/silica catalysts were synthesized by ion exchange and incipient wet impregnation method respectively and characterized by different techniques. DC arc-AES was used for Ag detection. XRD spectra show that Ag is loaded over the surface of the SiO{sub 2} sample and that after the ion-exchange process the HEU type structure of clinoptilolite is retained. UV-VIS (specific reflection at 310 nm) and IR (band at 695 cm{sup -1}) spectroscopy analysis proved that silver is loaded as a T-atom into zeolite channels as Ag{sup +}, instead of Na{sup +}, Ca{sup 2+}, or K{sup +} ions, existing in the natural clinoptilolite form. The samples Ag/SiO{sub 2} and Ag-clinoptilolite were tested as catalysts for decomposition of gas phase ozone. Very high catalytic activity (up to 99%) was observed and at the same time the catalysts remained active over time at room temperature.

20 CFR 641.310 - May the Governor delegate responsibility for developing and submitting the State Plan?

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2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false May the Governor delegate responsibility for developing and submitting the State Plan? 641.310 Section 641.310 Employees' Benefits EMPLOYMENT AND TRAINING... developing and submitting the State Plan, provided that any such delegation is consistent with State law and...

The modification of siRNA with 3' cholesterol to increase nuclease protection and suppression of native mRNA by select siRNA polyplexes.

Science.gov (United States)

Ambardekar, Vishakha V; Han, Huai-Yun; Varney, Michelle L; Vinogradov, Serguei V; Singh, Rakesh K; Vetro, Joseph A

2011-02-01

Polymer-siRNA complexes (siRNA polyplexes) are being actively developed to improve the therapeutic application of siRNA. A major limitation for many siRNA polyplexes, however, is insufficient mRNA suppression. Given that modifying the sense strand of siRNA with 3' cholesterol (chol-siRNA) increases the activity of free nuclease-resistant siRNA in vitro and in vivo, we hypothesized that complexation of chol-siRNA can increase mRNA suppression by siRNA polyplexes. In this study, the characteristics and siRNA activity of self assembled polyplexes formed with chol-siRNA or unmodified siRNA were compared using three types of conventional, positively charged polymers: (i) biodegradable, cross-linked nanogels (BDNG) (ii) graft copolymers (PEI-PEG), and (iii) linear block copolymers (PLL10-PEG, and PLL50-PEG). Chol-siRNA did not alter complex formation or the resistance of polyplexes to siRNA displacement by heparin but increased nuclease protection by BDNG, PLL10-PEG, and PLL50-PEG polyplexes over polyplexes with unmodified siRNA. Chol-CYPB siRNA increased suppression of native CYPB mRNA in mammary microvascular endothelial cells (MVEC) by BDNG polyplexes (35%) and PLL10-PEG polyplexes (69%) over comparable CYPB siRNA polyplexes but had no effect on PEI-PEG or PLL50-PEG polyplexes. Overall, these results indicate that complexation of chol-siRNA increases nuclease protection and mRNA suppression by select siRNA polyplexes. These results also suggest that polycationic block length is an important factor in increasing mRNA suppression by PLL-PEG chol-siRNA polyplexes in mammary MVEC. Copyright © 2010 Elsevier Ltd. All rights reserved.

Critical evaluation and thermodynamic optimisation of the Si-RE systems: Part II. Si-RE system (RE = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y)

International Nuclear Information System (INIS)

Kim, Junghwan; Jung, In-Ho

2015-01-01

Highlights: • The (Si-RE) (RE = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) systems have been reviewed. • The thermodynamic optimization of the (Si-RE) systems have been performed. • Systematic changes and similarities in the (Si-RE) systems were found. • The systematic approach resolved inconsistencies in the experimental data. • The systematic approach was used to assess the unexplored phase diagrams. - Abstract: A critical evaluation and optimisation of all available phase diagrams and thermodynamic data of the (Si-RE) (RE = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) systems was conducted to obtain reliable thermodynamic functions of all the phases in the system. In the thermodynamic modelling, a systematic analysis involving the similarity and periodicity observed in the lanthanide series was applied to resolve inconsistencies in the experimental data and to estimate the unknown thermodynamic properties and phase equilibria data. In particular, the phase diagrams and thermodynamic properties of (Si-Tm) and (Si-Lu) systems which are rarely investigated can be predicted from this approach. Systematic trends in thermodynamic properties of solid and liquid phases and phase diagram of the entire (Si-RE) systems were summarized

40 CFR 310.10 - What are temporary emergency measures?

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2010-07-01

... 40 Protection of Environment 27 2010-07-01 2010-07-01 false What are temporary emergency measures... RESPONSE TO HAZARDOUS SUBSTANCE RELEASES Provisions What Can Be Reimbursed? § 310.10 What are temporary... security; (2) Controlling the source of contamination; (3) Containing the release to prevent spreading; (4...

32 CFR 310.50 - Lost, stolen, or compromised information.

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2010-07-01

... Official for Privacy within 24 hours of discovering that a breach of personally identifiable information... Privacy Office of the breach within 48 hours upon being notified that a loss, theft, or compromise has... (CONTINUED) PRIVACY PROGRAM DOD PRIVACY PROGRAM Privacy Act Violations § 310.50 Lost, stolen, or compromised...

40 CFR 91.310 - Engine intake air humidity measurement.

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2010-07-01

... 40 Protection of Environment 20 2010-07-01 2010-07-01 false Engine intake air humidity measurement... Provisions § 91.310 Engine intake air humidity measurement. This section refers to engines which are supplied... air, the ambient testcell humidity measurement may be used. (a) Humidity conditioned air supply. Air...

40 CFR 90.310 - Engine intake air humidity measurement.

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2010-07-01

... 40 Protection of Environment 20 2010-07-01 2010-07-01 false Engine intake air humidity measurement... Emission Test Equipment Provisions § 90.310 Engine intake air humidity measurement. This section refers to... for the engine intake air, the ambient test cell humidity measurement may be used. (a) Humidity...

14 CFR 302.310 - Exemptions on the Department's initiative.

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2010-01-01

... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Exemptions on the Department's initiative... and Certain Other Proceedings § 302.310 Exemptions on the Department's initiative. The Department may grant exemptions on its own initiative when it finds that such exemptions are required by the...

Photoluminescence of a superficial Si nanolayer and an example of its use

International Nuclear Information System (INIS)

Ley, M.; Svrcek, V.; Kuznicki, Z.T.

2003-01-01

A characteristic photoluminescence of a superficial Si nanolayer realized by ion implantation has been observed. This effect, being totally independent of those shown recently for a nanoscale Si-layered system, is similar to that produced by Si nanocrystals (Si nc). To visualize the nature and give evidence of this effect, we fabricated samples in two different ways: (i) by incorporation of Si nc into thin SiO 2 films deposited on Si wafer by the spin-on-glass method and (ii) by a nanoscale superficial crystalline-Si modification using medium-energy ion implantation and thermal treatment. In both cases the UV-to-red light conversion has been observed to be independent of wafer post-implantation damage. To show the UV-to-red conversion contribution, we use the ion modified superficial Si layer with its well-defined potential barrier, the so-called carrier collection limit. Such a modified Si structure gives us a method of deconvoluting several optoelectronic features observed experimentally on modified Si. The practical realization is compatible with well-established Si technology

Evaluation and Control of Mechanical Degradation of Austenitic Stainless 310S Steel Substrate During Coated Superconductor Processing

Science.gov (United States)

Kim, Seung-Gyu; Kim, Najung; Shim, Hyung-Seok; Kwon, Oh Min; Kwon, Dongil

2018-05-01

The superconductor industry considers cold-rolled austenitic stainless 310S steel a less expensive substitute for Hastelloy X as a substrate for coated superconductor. However, the mechanical properties of cold-rolled 310S substrate degrade significantly in the superconductor deposition process. To overcome this, we applied hot rolling at 900 °C (or 1000 °C) to the 310S substrate. To check the property changes, a simulated annealing condition equivalent to that used in manufacturing was determined and applied. The effects of the hot rolling on the substrate were evaluated by analyzing its physical properties and texture.

Subtype Specific Differences in NS5A Domain II Reveals Involvement of Proline at Position 310 in Cyclosporine Susceptibility of Hepatitis C Virus

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Israr-ul H. Ansari

2012-11-01

Full Text Available Hepatitis C virus (HCV is susceptible to cyclosporine (CsA and other cyclophilin (CypA inhibitors, but the genetic basis of susceptibility is controversial. Whether genetic variation in NS5A alters cell culture susceptibility of HCV to CypA inhibition is unclear. We constructed replicons containing NS5A chimeras from genotypes 1a, 2a and 4a to test how variation in carboxy terminal regions of NS5A altered the genotype 1b CsA susceptibility. All chimeric replicons including genotype 1b Con1LN-wt replicon exhibited some cell culture sensitivity to CsA with genotype 4a being most sensitive and 1a the least. The CypA binding pattern of truncated NS5A genotypes correlated with the susceptibility of these replicons to CsA. The Con1LN-wt replicon showed increased susceptibility towards CsA when proline at position 310P was mutated to either threonine or alanine. Furthermore, a 15 amino acid long peptide fused N terminally to GFP coding sequences confirmed involvement of proline at 310 in CypA binding. Our findings are consistent with CypA acting on multiple prolines outside of the previously identified CypA binding sites. These results suggest multiple specific genetic variants between genotype 1a and 1b in the C-terminus of NS5A alter the CsA susceptibility of replicons, and some variants may oppose the effects of others.

The adaptor protein CrkII regulates IGF-1-induced biological behaviors of pancreatic ductal adenocarcinoma.

Science.gov (United States)

Liu, Rui; Wang, Qing; Xu, Guangying; Li, Kexin; Zhou, Lingli; Xu, Baofeng

2016-01-01

Recently, the adaptor protein CrkII has been proved to function in initiating signals for proliferation and invasion in some malignancies. However, the specific mechanisms underlying insulin-like growth factor 1 (IGF-1)-CrkII signaling-induced proliferation of pancreatic ductal adenocarcinoma (PDAC) were not unraveled. In this work, PDAC tissues and cell lines were subjected to in vitro and in vivo assays. Our findings showed that CrkII was abundantly expressed in PDAC tissues and closely correlated with tumor-node-metastasis (TNM) stage and invasion. When cells were subjected to si-CrkII, si-CrkII inhibited IGF-1-mediated PDAC cell growth. In vitro, we demonstrated the upregulation of CrkII, p-Erk1/2, and p-Akt occurring in IGF-1-treated PDAC cells. Conversely, si-CrkII affected upregulation of CrkII, p-Erk1/2, and p-Akt. In addition, cell cycle and in vivo assay identified that knockdown of CrkII inhibited the entry of G1 into S phase and the increase of PDAC tumor weight. In conclusion, CrkII mediates IGF-1 signaling and further balanced PDAC biological behaviors via Erk1/2 and Akt pathway, which indicates that CrkII gene and protein may act as an effective target for the treatment of PDAC.

Stress Rupture and Precipitation Behavior of TP310HCbN(HR3C for Supercritical Boilers

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FANG Xu-dong

2017-06-01

Full Text Available Using persistent experiment method, combined with Gleeble,hardness analysis, SEM, EDS, TEM and other analytical methods, the hot deformation, stress rupture and precipitation behavior of TP310HCbN heat resistance steel was analysed at 650℃ and 700℃, the results show that:the change of the hardness is not obviously under two different stress rupture temperature; with stress rupture time prolongs, TP310HCbN heat-resistant steel intragranular precipitates from granular into rod-shaped, and presence of wormlike NbCrN rich precipitates and dislocation interactions; Taiyuan Iron and Steel production of TP310HCbN heat-resistant steel at 650/700℃-100000h extrapolation lasting strength meet the standard requirements.

Chromospheric oscillations observed with OSO 8. III. Average phase spectra for Si II

International Nuclear Information System (INIS)

White, O.R.; Athay, R.G.

1979-01-01

Time series of intensity and Doppler-shift fluctuations in the Si II emission lines lambda816.93 and lambda817.45 are Fourier analyzed to determine the frequency variation of phase differences between intensity and velocity and between these two lines formed 300 km apart in the middle chromosphere. Average phase spectra show that oscillations between 2 and 9 mHz in the two lines have time delays from 35 to 40 s, which is consistent with the upward propagation of sound wave at 8.6-7.5 km s -1 . In this same frequency band near 3 mHz, maximum brightness leads maximum blueshift by 60 0 . At frequencies above 11 mHz where the power spectrum is flat, the phase differences are uncertain, but approximately 65% of the cases indicate upward propagation. At these higher frequencies, the phase lead between intensity and blue Doppler shift ranges from 0 0 to 180 0 with an average value of 90 0 . However, the phase estimates in this upper band are corrupted by both aliasing and randomness inherent to the measured signals. Phase differences in the two narrow spectral features seen at 10.5 and 27 mHz in the power spectra are shown to be consistent with properties expected for aliases of the wheel rotation rate of the spacecraft wheel section

The Modification of siRNA with 3′ Cholesterol to Increase Nuclease Protection and Suppression of Native mRNA by Select siRNA Polyplexes

Science.gov (United States)

Ambardekar, Vishakha V.; Han, Huai-Yun; Varney, Michelle L.; Vinogradov, Serguei V.; Singh, Rakesh K.; Vetro, Joseph A.

2010-01-01

Polymer-siRNA complexes (siRNA polyplexes) are being actively developed to improve the therapeutic application of siRNA. A major limitation for many siRNA polyplexes, however, is insufficient mRNA suppression. Given that modifying the sense strand of siRNA with 3′ cholesterol (chol-siRNA) increases the activity of free nuclease-resistant siRNA in vitro and in vivo, we hypothesized that complexation of chol-siRNA can increase mRNA suppression by siRNA polyplexes. In this study, the characteristics and siRNA activity of self assembled polyplexes formed with chol-siRNA or unmodified siRNA were compared using three types of conventional, positively charged polymers: (i) biodegradable, cross-linked nanogels (BDNG) (ii) graft copolymers (PEI-PEG), and (iii) linear block copolymers (PLL10-PEG, and PLL50-PEG). Chol-siRNA did not alter complex formation or the resistance of polyplexes to siRNA displacement by heparin but increased nuclease protection by BDNG, PLL10-PEG, and PLL50-PEG polyplexes over polyplexes with unmodified siRNA. Chol-CYPB siRNA increased suppression of native CYPB mRNA in mammary microvascular endothelial cells (MVEC) by BDNG polyplexes (35%) and PLL10-PEG polyplexes (69%) over comparable CYPB siRNA polyplexes but had no effect on PEI-PEG or PLL50-PEG polyplexes. Overall, these results indicate that complexation of chol-siRNA increases nuclease protection and mRNA suppression by select siRNA polyplexes. These results also suggest that polycationic block length is an important factor in increasing mRNA suppression by PLL-PEG chol-siRNA polyplexes in mammary MVEC. PMID:21047680

An extreme Fe II emitter the narrow line quasar PHL 1092

CERN Document Server

Bergeron, J

1980-01-01

A search for Fe II emission in a sample of radio-quiet quasars has revealed the outstanding properties of PHL 1092. Intense Fe II lines dominate the entire spectrum, and the Fe II UV multiplets are nearly as strong as the optical ones. In contrast the extreme weakness of the Balmer and Mg II lines is striking. For the first time, Fe I lines are identified in an extra-galactic object. The lines are narrow, with a FWHM of 1300 km s/sup -1/. The presence of Fe II UV lines and Fe I lines from the ground state requires moderate column densities. However Fe/sup 0/ can exist only in a region completely shielded from the UV continuum. The weakness of Mg II and H beta relative to Fe II lines is best explained by their thermalization. The emitting region is of high electron density n/sub e/ approximately=10/sup 12/ cm/sup -3/, low temperature T approximately=10000K, and has an optical depth in the Fe II UV lines tau /sub UV/ approximately=10/sup 3/-10/sup 4/. It is speculated that for higher densities all the lines wou...

Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

DEFF Research Database (Denmark)

Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

1986-01-01

X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

Spiral chain structure of high pressure selenium-II' and sulfur-II from powder x-ray diffraction

International Nuclear Information System (INIS)

Fujihisa, Hiroshi; Yamawaki, Hiroshi; Sakashita, Mami; Yamada, Takahiro; Honda, Kazumasa; Akahama, Yuichi; Kawamura, Haruki; Le Bihan, Tristan

2004-01-01

The structure of high pressure phases, selenium-II ' (Se-II ' ) and sulfur-II (S-II), for α-Se 8 (monoclinic Se-I) and α-S 8 (orthorhombic S-I) was studied by powder x-ray diffraction experiments. Se-II ' and S-II were found to be isostructural and to belong to the tetragonal space group I4 1 /acd, which is made up of 16 atoms in the unit cell. The structure consisted of unique spiral chains with both 4 1 and 4 3 screws. The results confirmed that the structure sequence of the pressure-induced phase transitions for the group VIb elements depended on the initial molecular form. The chemical bonds of the phases are also discussed from the interatomic distances that were obtained

Silencing MR-1 attenuates inflammatory damage in mice heart induced by AngII

International Nuclear Information System (INIS)

Dai, Wenjian; Chen, Haiyang; Jiang, Jiandong; Kong, Weijia; Wang, Yiguang

2010-01-01

Myofibrillogenesis regulator-1(MR-1) can aggravate cardiac hypertrophy induced by angiotensin(Ang) II in mice through activation of NF-κB signaling pathway, and nuclear transcription factor (NF)-κB and activator protein-1(AP-1) regulate inflammatory and immune responses by increasing the expression of specific inflammatory genes in various tissues including heart. Whether inhibition of MR-1 expression will attenuate AngII-induced inflammatory injury in mice heart has not been explored. Herein, we monitored the activation of NF-κB and AP-1, together with expression of pro-inflammatory of interleukin(IL)-6, tumor necrosis factor(TNF)-α, vascular-cell adhesion molecule (VCAM)-1, platelet endothelial cell adhesion molecule (PECAM), and inflammatory cell infiltration in heart of mice which are induced firstly by AngII (PBS),then received MR-1-siRNA or control-siRNA injecting. We found that the activation of NF-κB and AP-1 was inhibited significantly, together with the decreased expression of IL-6, TNF-α, VCAM-1, and PECAM in AngII-induced mice myocardium in MR-1-siRNA injection groups compared with control-siRNA injecting groups. However, the expression level of MR-1 was not an apparent change in PBS-infused groups than in unoperation groups, and MR-1-siRNA do not affect the expression of MR-1 in PBS-infused mice. Our findings suggest that silencing MR-1 protected mice myocardium against inflammatory injury induced by AngII by suppression of pro-inflammatory transcription factors NF-κB and AP-1 signaling pathway.

Enhanced radiation response in radioresistant MCF-7 cells by targeting peroxiredoxin II

Directory of Open Access Journals (Sweden)

Diaz AJG

2013-10-01

Full Text Available Anthony Joseph Gomez Diaz,1 Daniel Tamae,2 Yun Yen,3 JianJian Li,4 Tieli Wang1 1Department of Chemistry and Biochemistry, California State University at Dominguez Hills, Carson, CA, 2Center of Excellence in Environmental Toxicology, Department of Pharmacology, University of Pennsylvania, Philadelphia, PA, 3Department of Clinical and Molecular Pharmacology, Beckman Research Institute of City of Hope National Medical Center, Duarte, CA, 4Department of Radiation Oncology, University of California Davis, Sacramento, CA, USA Abstract: In our previous study, we identified that a protein target, peroxiredoxin II (PrxII, is overexpressed in radioresistant MCF+FIR3 breast-cancer cells and found that its expression and function is associated with breast-cancer radiation sensitivity or resistance. Small interference RNA (siRNA targeting PrxII gene expression was able to sensitize MCF+FIR3 radioresistant breast-cancer cells to ionizing radiation. The major focus of this work was to investigate how the radiation response of MCF+FIR3 radioresistant cells was affected by the siRNA that inhibits PrxII gene expression. Our results, presented here, show that silencing PrxII gene expression increased cellular toxicity by altering cellular thiol status, inhibiting Ca2+ efflux from the cells, and perturbing the intracellular Ca2+ homeostasis. By combining radiotherapy and siRNA technology, we hope to develop new therapeutic strategies that may have potential to enhance the efficacy of chemotherapeutic agents due to this technology's property of targeting to specific cancer-related genes. Keywords: siRNA, PrxII, radiation resistance, Ca2+, MCF+FIR3

40 CFR 142.310 - How can a person served by the public water system obtain EPA review of a State proposed small...

Science.gov (United States)

2010-07-01

... water system obtain EPA review of a State proposed small system variance? 142.310 Section 142.310... PRIMARY DRINKING WATER REGULATIONS IMPLEMENTATION Variances for Small System Public Participation § 142.310 How can a person served by the public water system obtain EPA review of a State proposed small...

TRIF promotes angiotensin II-induced cross-talk between fibroblasts and macrophages in atrial fibrosis

Energy Technology Data Exchange (ETDEWEB)

Chen, Xiao-Qing; Zhang, Dao-Liang [Department of Cardiology, Shanghai Chest Hospital, Shanghai Jiaotong University, Shanghai (China); Zhang, Ming-Jian; Guo, Meng; Zhan, Yang-Yang; Liu, Fang [National Key Laboratory of Medical Immunology, Second Military Medical University, Shanghai (China); Jiang, Wei-Feng; Zhou, Li [Department of Cardiology, Shanghai Chest Hospital, Shanghai Jiaotong University, Shanghai (China); Zhao, Liang, E-mail: zhaol_zg@163.com [Department of Cardiology, Shanghai Chest Hospital, Shanghai Jiaotong University, Shanghai (China); Wang, Quan-Xing, E-mail: wqxejd@126.com [National Key Laboratory of Medical Immunology, Second Military Medical University, Shanghai (China); Liu, Xu, E-mail: liuxu_xk@163.com [Department of Cardiology, Shanghai Chest Hospital, Shanghai Jiaotong University, Shanghai (China)

2015-08-14

Aims: Atrial fibroblasts and macrophages have long been thought to participate in atrial fibrillation (AF). However, which specific mediator may regulate the interaction between them remains unclear. Methods and results: We provided the evidence for the involvement of Toll/IL-1 receptor domain-containing adaptor inducing IFN-β (TRIF), an important inflammation-related molecule, in the pathophysiology of AF. Patients with AF showed higher levels of angiotensin II (AngII) and TRIF expression and larger number of macrophages infiltration in left atria appendage than individuals with sinus rhythm (SR). In the cell study, AngII induced chemokines expressions in mouse atrial fibroblasts and AngII-stimulated atrial fibroblasts induced the chemotaxis of macrophages, which were reduced by losartan and TRIF siRNA. Meanwhile, AngII-stimulated atrial fibroblasts proliferation was enhanced by macrophages. Conclusions: Our data demonstrated that TRIF may be a crucial factor promoting the interaction between atrial fibroblasts and macrophages, leading to atrial fibrosis. - Highlights: • Compared with SR, AF showed higher TRIF expression in left atrial appendage. • TRIF siRNA reversed macrophage chemotaxis induced by AngII-treated fibroblast. • TRIF siRNA reversed chemokines expressions induced by AngII in fibroblast. • AngII-stimulated atrial fibroblast proliferation was enhanced by macrophage.

TRIF promotes angiotensin II-induced cross-talk between fibroblasts and macrophages in atrial fibrosis

International Nuclear Information System (INIS)

Chen, Xiao-Qing; Zhang, Dao-Liang; Zhang, Ming-Jian; Guo, Meng; Zhan, Yang-Yang; Liu, Fang; Jiang, Wei-Feng; Zhou, Li; Zhao, Liang; Wang, Quan-Xing; Liu, Xu

2015-01-01

Aims: Atrial fibroblasts and macrophages have long been thought to participate in atrial fibrillation (AF). However, which specific mediator may regulate the interaction between them remains unclear. Methods and results: We provided the evidence for the involvement of Toll/IL-1 receptor domain-containing adaptor inducing IFN-β (TRIF), an important inflammation-related molecule, in the pathophysiology of AF. Patients with AF showed higher levels of angiotensin II (AngII) and TRIF expression and larger number of macrophages infiltration in left atria appendage than individuals with sinus rhythm (SR). In the cell study, AngII induced chemokines expressions in mouse atrial fibroblasts and AngII-stimulated atrial fibroblasts induced the chemotaxis of macrophages, which were reduced by losartan and TRIF siRNA. Meanwhile, AngII-stimulated atrial fibroblasts proliferation was enhanced by macrophages. Conclusions: Our data demonstrated that TRIF may be a crucial factor promoting the interaction between atrial fibroblasts and macrophages, leading to atrial fibrosis. - Highlights: • Compared with SR, AF showed higher TRIF expression in left atrial appendage. • TRIF siRNA reversed macrophage chemotaxis induced by AngII-treated fibroblast. • TRIF siRNA reversed chemokines expressions induced by AngII in fibroblast. • AngII-stimulated atrial fibroblast proliferation was enhanced by macrophage

Investigation on Mechanical and Fatigue behaviour of Aluminium Based SiC/ZrO2 Particle Reinforced MMC

Science.gov (United States)

Ramesh, S.; Govindaraju, N.; Suryanarayan, C. P.

2018-04-01

The study is the work on Aluminium Metal Matrix Composites (MMC’s), which have wider applications in automobile, aerospace and defense industries, hi-tech engineering and power transmission due to their lightweight, high strength and other unique properties. The Aluminium Matrix Composites (AMC’s) refer to a kind of light weight high performance Aluminium centric material system. AMC’s consist of a non-metallic reinforcement which when included into aluminium matrix offers an advantage over the base material. Reinforcements like SiC, B4C, Al2O3, TiC, TiB2, TiO2 are normally preferred to improve mechanical properties of such composites. Here Aluminium 6061 is preferred as matrix material, while silicon carbide (SiC) and Zirconium di-oxide (ZrO2) is selected as reinforcement compounds. Conventional Stir casting procedure is employed to fabricate the necessary composites compositions, which are I. Al:SiC::100:5 and II. Al:ZrO2:SiC::100:3:2. Experimental results depict that the composition II provides higher hardness of 53.6 RHN as opposed to 45.8 RHN of composition I. In tensile strength composition II demonstrates 96.43 N/mm2 as opposed to 67.229 N/mm2 tensile strength of composition II. The fatigue test indicate a expected number of life cycles to failure of 105 cycles for composition II and over 104 cycles for composition I, at stress ranges of 79.062 MPa and 150.651 MPa respectively.

Crystallization and molecular-replacement studies of the monoclonal antibody mAbR310 specific for the (R)-HNE-modified protein

International Nuclear Information System (INIS)

Ito, Sohei; Tatsuda, Emi; Ishino, Kousuke; Suzuki, Kenichiro; Sakai, Hiroshi; Uchida, Koji

2006-01-01

Antigen-free Fab fragment of mAbR310, which recognizes (R)-HNE modified protein, has been crystallized. Initial phases have been obtained by molecular replacement. 4-Hydroxy-2-nonenal (HNE), a major racemic product of lipid peroxidation, reacts with histidine to form a stable HNE–histidine Michael addition-type adduct possessing three chiral centres in the cyclic hemiacetal structure. Monoclonal antibodies against HNE-modified protein have been widely used for assessing oxidative stress in vitro and in vivo. Here, the purification, crystallization and preliminary crystallographic analysis of a Fab fragment of novel monoclonal antibody R310 (mAbR310), which recognizes (R)-HNE-modified protein, are reported. The Fab fragment of mAbR310 was obtained by digestion with papain, purified and crystallized. Using hanging-drop vapour-diffusion crystallization techniques, crystals of mAbR310 Fab were obtained. The crystal belongs to the monoclinic space group C2 (unit-cell parameters a = 127.04, b = 65.31, c = 64.29 Å, β = 118.88°) and diffracted X-rays to a resolution of 1.84 Å. The asymmetric unit contains one molecule of mAbR310, with a corresponding crystal volume per protein weight of 2.51 Å 3 Da −1 and a solvent content of 51.0%

HIVsirDB: a database of HIV inhibiting siRNAs.

Directory of Open Access Journals (Sweden)

Atul Tyagi

Full Text Available Human immunodeficiency virus (HIV is responsible for millions of deaths every year. The current treatment involves the use of multiple antiretroviral agents that may harm patients due to their toxic nature. RNA interference (RNAi is a potent candidate for the future treatment of HIV, uses short interfering RNA (siRNA/shRNA for silencing HIV genes. In this study, attempts have been made to create a database HIVsirDB of siRNAs responsible for silencing HIV genes.HIVsirDB is a manually curated database of HIV inhibiting siRNAs that provides comprehensive information about each siRNA or shRNA. Information was collected and compiled from literature and public resources. This database contains around 750 siRNAs that includes 75 partially complementary siRNAs differing by one or more bases with the target sites and over 100 escape mutant sequences. HIVsirDB structure contains sixteen fields including siRNA sequence, HIV strain, targeted genome region, efficacy and conservation of target sequences. In order to facilitate user, many tools have been integrated in this database that includes; i siRNAmap for mapping siRNAs on target sequence, ii HIVsirblast for BLAST search against database, iii siRNAalign for aligning siRNAs.HIVsirDB is a freely accessible database of siRNAs which can silence or degrade HIV genes. It covers 26 types of HIV strains and 28 cell types. This database will be very useful for developing models for predicting efficacy of HIV inhibiting siRNAs. In summary this is a useful resource for researchers working in the field of siRNA based HIV therapy. HIVsirDB database is accessible at http://crdd.osdd.net/raghava/hivsir/.

30 CFR 75.310 - Installation of main mine fans.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of main mine fans. 75.310 Section... mine fans. (a) Each main mine fan shall be— (1) Installed on the surface in an incombustible housing... that gives a signal at the mine when the fan either slows or stops. A responsible person designated by...

A potential method using Ge{iPrNC[N(SiMe_3)_2]NiPr}{sub 2}, (Et{sub 3}Si){sub 2}Te and anhydrous hydrazine for germanium tellurides

Energy Technology Data Exchange (ETDEWEB)

Du, Liyong; Du, Shulei; Ding, Yuqiang [School of Chemical and Material Engineering, Jiangnan University, Wuxi (China)

2017-12-29

A germanium(II)-guanidine derivative of formula Ge{iPrNC[N(SiMe_3)_2]NiPr}{sub 2} (1) was synthesized and characterized by {sup 1}H NMR, {sup 13}C NMR, elemental analysis, and X-ray diffraction method. Thermal property was also studied to identify its thermal stability and volatility. More importantly, compound 1 was synthesized to develop a new method for germanium tellurides, where anhydrous hydrazine was introduced to prompt the activity of germanium(II) guanidines (or derivatives) towards (Et{sub 3}Si){sub 2}Te. Solution reaction of compound 1, (Et{sub 3}Si){sub 2}Te, and anhydrous hydrazine was investigated to pre-identify the feasibility of this combination for ALD process. The EDS data of the black precipitate from this reaction verified the potential of this method to manufacture germanium tellurides. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides

Science.gov (United States)

Cheng, Cheng

Non-crystalline thin film materials are widely used in the semiconductor industry (micro- and optoelectronics) and in green energy, e.g., photovolatic applications. This dissertation under-pins these device application with studies of their electronic structures using derivative X-ray Absorption Spectroscopy (XAS) and derivative Spectroscopic Ellipsometry (SE) for the first time to experimentally determine electronic and intrinsic defect structures. Differences between electron and hole mobilities in c- (and ng-Si) and c- (and ng- Ge), make Ge channels superior to Si channels in for aggressively scaled CMOS field effect transistors (FETs). Bonding between Si and Ge substrates and gate dielectric oxides is the focus this dissertation. The primary objective of this research is to measure and interpret by ab-initio theory the electronic and intrinsic electronic defect structures mirco-electronic thin film materials. This is accomplished for the first time by combining (i) derivative XAS TEY data obtained at the Stanford Synchrotron Radiation Light Source (SSRL) with (ii) derivative Spectroscopic Ellipsometry results obtained at the J.A. Woollam Co. laboratory. All the oxides were deposited in RPECVD system with in-line AES and RHEED. Thins films and gate stacks were annealed in RTA system in Ar to determine temperature dependent changes. 2nd derivative analysis is applied on XAS and SE spectra emphasizing the conduction band (CB) and virtual bound state (VBS) regimes. 2nd derivative SE spectra for ng-Si and ng-Ge each have 3 distinct regimes: (i) 3 excitons, (ii) 2 features in the CB edge region, and (iii) 3 additional exciton features above the IP. Excitonic spectral width provides conductivity electron masses (em0*) and hence electron mobilities. The wider the energy range, the higher the electron mobility in that CB. Spectra of high-K dielectrics have an additional energy regime between the CB edge regime, and the higher eV excitons. This regime has 4 intra-d state

Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

International Nuclear Information System (INIS)

Leung, To Chi.

1991-01-01

A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

45 CFR 310.40 - What requirements apply for accessing systems and records for monitoring Computerized Tribal IV-D...

Science.gov (United States)

2010-10-01

... 45 Public Welfare 2 2010-10-01 2010-10-01 false What requirements apply for accessing systems and records for monitoring Computerized Tribal IV-D Systems and Office Automation? 310.40 Section 310.40... COMPUTERIZED TRIBAL IV-D SYSTEMS AND OFFICE AUTOMATION Accountability and Monitoring Procedures for...

New fundamental defects in a-SiO2

International Nuclear Information System (INIS)

Karna, S.P.; Kurtz, H.A.; Shedd, W.M.; Pugh, R.D.; Singaraju, B.K.

1999-01-01

Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO 2 structure (localized deviations from stoichiometrically pure Si and SiO 2 ) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O 2 Sitriple b ondSi ↑ atomic structure. The other defect, called the Y-center, is found to have an OSi 2 triple b ondSi ↑ structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

21 CFR 310.530 - Topically applied hormone-containing drug products for over-the-counter (OTC) human use.

Science.gov (United States)

2010-04-01

... labeling or in the ingredient statement is an implied drug claim. The claim implied by the use of this term... 21 Food and Drugs 5 2010-04-01 2010-04-01 false Topically applied hormone-containing drug products for over-the-counter (OTC) human use. 310.530 Section 310.530 Food and Drugs FOOD AND DRUG...

9 CFR 319.310 - Lima beans with ham in sauce, beans with ham in sauce, beans with bacon in sauce, and similar...

Science.gov (United States)

2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Lima beans with ham in sauce, beans with ham in sauce, beans with bacon in sauce, and similar products. 319.310 Section 319.310 Animals and....310 Lima beans with ham in sauce, beans with ham in sauce, beans with bacon in sauce, and similar...

Photocatalytic degradation of C. I. Reactive Red 24 solution with K₆SiW₁₁O₃₉Sn(II.).

Science.gov (United States)

Guo, Guixiang; Zhu, Xiuhua; Shi, Fuyou; Wang, Anning; Wang, Wei; Mu, Jun; Wan, Quanli; Zhang, Rong

2013-12-01

Environmental friendly materials, K6SiW11O39Sn (SiWSn), was synthesized. SiWSn photocatalytic decomposition of C. I. Reactive Red 24 (RR24) with the UV-lamp (253.7 nm, 20 W), Xenon lamp filtered less than 390 nm light (500 W) and sun light was investigated. The results showed that RR24 solution could be effectively decolorized with the SiWSn photocatalyst. The photocatalytic degradation efficiency of RR24 with SiWSn was affected by the initial concentration of RR2 solution, the amount of SiWSn and the photolysis time. It is demonstrated that the process of photodegradation of RR24 with SiWSn is a pesudo first-order reaction, which can be described by Langmuir-Hinshelwood equation. Hydroxyl radicals and holes are both the main oxidants in the photocatalytic reaction of RR24 with SiWSn. Copyright © 2013 The Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

The Rho kinases I and II regulate different aspects of myosin II activity

DEFF Research Database (Denmark)

Yoneda, Atsuko; Multhaupt, Hinke A B; Couchman, John R

2005-01-01

The homologous mammalian rho kinases (ROCK I and II) are assumed to be functionally redundant, based largely on kinase construct overexpression. As downstream effectors of Rho GTPases, their major substrates are myosin light chain and myosin phosphatase. Both kinases are implicated in microfilament...... bundle assembly and smooth muscle contractility. Here, analysis of fibroblast adhesion to fibronectin revealed that although ROCK II was more abundant, its activity was always lower than ROCK I. Specific reduction of ROCK I by siRNA resulted in loss of stress fibers and focal adhesions, despite...

Energy variable monoenergetic positron beam study of oxygen atoms in Czochralski grown Si

International Nuclear Information System (INIS)

Tanigawa, S.; Wei, L.; Tabuki, Y.; Nagai, R.; Takeda, E.

1992-01-01

A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with the coverage of SiO 2 (100 nm) and poly-Si (200 nm)/SiO 2 (100 nm), respectively. It was found that (i) the growth of SiO 2 gives rise to a strong Doppler broadening of positron annihilation radiations in the bulk of Si, (ii) such a broadening can be recovered to the original level by annealing at 450degC, by the removal of overlayers using chemical etching and long-term aging at room temperature, (iii) the film stress over the CZ-grown Si is responsible for the rearrangement of oxygen atoms in S and (iv) only tensile stress gives rise to the clustering of oxygen atoms. The observed broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in CZ-grown Si. (author)

Synthesis of nanometer-sized fayalite and magnesium-iron(II) mixture olivines

Energy Technology Data Exchange (ETDEWEB)

Qafoku, Odeta; Ilton, Eugene S.; Bowden, Mark E.; Kovarik, Libor; Zhang, Xin; Kukkadapu, Ravi K.; Engelhard, Mark H.; Thompson, Christopher J.; Schaef, Herbert T.; McGrail, Bernard Peter; Rosso, Kevin M.; Loring, John S.

2018-04-01

Olivines are divalent orthosilicates with important geologic, biological, and industrial significance and are typically comprised of mixtures of Mg2+ and Fe2+ ranging from forsterite (Mg2SiO4) to fayalite (Fe2SiO4). Investigating the role of Fe(II) in olivine reactivity requires the ability to synthesize olivines that are nanometer-sized, have different percentages of Mg2+ and Fe2+, and have good bulk and surface purity. This article demonstrates a new method for synthesizing nanosized fayalite and Mg-Fe mixture olivines. First, carbonaceous precursors are generated from sucrose, PVA, colloidal silica, Mg2+, and Fe3+. Second, these precursors are calcined in air to burn carbon and create mixtures of Fe(III)-oxides, forsterite, and SiO2. Finally, calcination in reducing CO-CO2 gas buffer leads to Fe(II)-rich olivines. XRD, Mössbauer, and IR analyses verify good bulk purity and composition. XPS indicates that surface iron is in its reduced Fe(II) form, and surface Si is consistent with olivine. SEM shows particle sizes predominately between 50 and 450 nm, and BET surface areas are 2.8-4.2 m2/g. STEM HAADF analysis demonstrates even distributions of Mg and Fe among the available M1 and M2 sites of the olivine crystals. These nanosized Fe(II)-rich olivines are suitable for laboratory studies with in situ probes that require mineral samples with high reactivity at short timescales.

21 CFR 310.528 - Drug products containing active ingredients offered over-the-counter (OTC) for use as an...

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 5 2010-04-01 2010-04-01 false Drug products containing active ingredients offered over-the-counter (OTC) for use as an aphrodisiac. 310.528 Section 310.528 Food and Drugs FOOD AND... drug product. Anise, cantharides, don qual, estrogens, fennel, ginseng, golden seal, gotu kola, Korean...

A High-Efficiency Compact SiC-based Power Converter System, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Wide-bandgap SiC semiconductors have been recently investigated for use in power devices, because of their potential capabilities of operating at high power...

The millimeter-wave spectrum of highly vibrationally excited SiO

International Nuclear Information System (INIS)

Mollaaghababa, R.; Gottlieb, C.A.; Vrtilek, J.M.; Thaddeus, P.

1991-01-01

The millimeter-wave rotational spectra of SiO in high vibrational states (v = 0-40) in its electronic ground state were measured between 228 and 347 GHz in a laboratory discharge through SiH4 and CO. On ascending the vibrational ladder, populations decline precipitously for the first few levels, with a vibrational temperature of about 1000 K; at v of roughly 3, however, they markedly flatten out, and from there to v of roughly 40 the temperature is of the order of 10,000 K. With the Dunham coefficients determined here, the rotational spectrum of highly vibrationally excited SiO can now be calculated into the far-infrared to accuracies required for radioastronomy. Possible astronomical sources of highly vibrationally excited SiO are certain stellar atmospheres, ultracompact H II regions, very young supernova ejecta, and dense interstellar shocks. 16 refs

Thermodynamic analysis and economical evaluation of two 310-80 K pre-cooling stage configurations for helium refrigeration and liquefaction cycle

Science.gov (United States)

Zhu, Z. G.; Zhuang, M.; Jiang, Q. F.; Y Zhang, Q.; Feng, H. S.

2017-12-01

In 310-80 K pre-cooling stage, the temperature of the HP helium stream reduces to about 80 K where nearly 73% of the enthalpy drop from room temperature to 4.5 K occurs. Apart from the most common liquid nitrogen pre-cooling, another 310-80 K pre-cooling configuration with turbine is employed in some helium cryoplants. In this paper, thermodynamic and economical performance of these two kinds of 310-80 K pre-cooling stage configurations has been studied at different operating conditions taking discharge pressure, isentropic efficiency of turbines and liquefaction rate as independent parameters. The exergy efficiency, total UA of heat exchangers and operating cost of two configurations are computed. This work will provide a reference for choosing 310-80 K pre-cooling stage configuration during design.

Silver nanoparticles deposited on amine-functionalized silica spheres and their amalgamation-based spectral and colorimetric detection of Hg(II) ions

Energy Technology Data Exchange (ETDEWEB)

Rameshkumar, Perumal; Manivannan, Shanmugam; Ramaraj, Ramasamy, E-mail: ramarajr@yahoo.com [Madurai Kamaraj University, Centre for Photoelectrochemistry, School of Chemistry (India)

2013-05-15

A facile synthetic method to decorate amine-functionalized silica spheres (SiO{sub 2}) by silver nanoparticles (Ag NPs) is reported. The transmission electron microscopic (TEM) images showed that spherical Ag NPs with an average particle size of 14 nm were deposited on 250 nm-sized SiO{sub 2} spheres (SiO{sub 2}/Ag NPs). The spectral and colorimetric detection of Hg(II) ions were carried out using the synthesized SiO{sub 2}/Ag NPs with an experimental detection limit of 5 {mu}M. It was found that the addition of Hg(II) ions (150 {mu}M) into the solution of SiO{sub 2}/Ag NPs completely quenched the SPR band of the Ag NPs due to the formation of anisotropic Ag amalgam crystals (AgHg). The selective detection of Hg(II) ions by SiO{sub 2}/Ag NPs in the presence of other environmentally relevant metal ions was also demonstrated using spectral and colorimetric methods.Graphical abstractAmine-functionalized silica spheres are decorated by in situ formation of silver nanoparticles and their spectral and colorimetric detection of Hg(II) ions is reported.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

H2O incorporation in the phosphorene/a-SiO2 interface: a first-principles study.

Science.gov (United States)

Scopel, Wanderlã L; Souza, Everson S; Miwa, R H

2017-02-22

Based on first-principles calculations, we investigate (i) the energetic stability and electronic properties of single-layer phosphorene (SLP) adsorbed on an amorphous SiO 2 surface (SLP/a-SiO 2 ), and (ii) the further incorporation of water molecules at the phosphorene/a-SiO 2 interface. In (i), we find that the phosphorene sheet binds to a-SiO 2 through van der Waals interactions, even in the presence of oxygen vacancies on the surface. The SLP/a-SiO 2 system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-SiO 2 substrate. The structure and the surface-potential corrugations promote the formation of electron-rich and electron-poor regions on the phosphorene sheet and at the SLP/a-SiO 2 interface. Such charge density puddles are strengthened by the presence of oxygen vacancies in a-SiO 2 . In (ii), because of the amorphous structure of the surface, we consider a number of plausible geometries for H 2 O embedded in the SLP/a-SiO 2 interface. There is an energetic preference for the formation of hydroxyl (OH) groups on the a-SiO 2 surface. Meanwhile, in the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we observe the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P-O-Si chemical bonds at the SLP/a-SiO 2 interface. Further x-ray absorption spectra simulations are performed, which aim to provide additional structural/electronic information on the oxygen atoms forming hydroxyl groups or P-O-Si chemical bonds at the interface region.

Novel composites of β-SiAlON and radome manufacturing ...

Indian Academy of Sciences (India)

2017-07-08

Jul 8, 2017 ... radome applications, (ii) designing of an AlN-free precursor mixture for consolidating ... radomes with very high-production yields and (vi) development of an ... (about 4 mm thick) of β-SiAlON prototype radome manufactured at.

Superconducting state in (W, Ta)5SiB2

Science.gov (United States)

Fukuma, M.; Kawashima, K.; Akimitsu, J.

We characterize the superconducting state in a boro-silicide (W, Ta)5SiB2, with Tc of 6.5 K by means of magnetization, electrical resistivity, and specific heat measurements. As x increased, the transition temperature Tc abruptly enhances from 5.8 to 6.5 K. The magnetization versus magnetic field (M-H) curve indicated that (W, Ta)5SiB2 was a conventional type-II superconductor. The estimated lower critical field Hc1(0) and upper critical field Hc2(T) are about 121 Oe and 14.7 kOe, respectively. The penetration depth λ(0) and coherence length ξ(0) are calculated to be approximately 369 and 14.9 nm, respectively, using Ginzburg-Landau (GL) equations. Specific heat data shows the superconductivity in W4.5Ta0.5SiB2 belongs to a week-coupling BCS superconductor. Finally, we discuss the increasing of Tc in of (W, Ta)5SiB2 system.

Receptor Autoradiography Protocol for the Localized Visualization of Angiotensin II Receptors.

Science.gov (United States)

Linares, Andrea; Couling, Leena E; Carrera, Eduardo J; Speth, Robert C

2016-06-07

This protocol describes receptor binding patterns for Angiotensin II (Ang II) in the rat brain using a radioligand specific for Ang II receptors to perform receptor autoradiographic mapping. Tissue specimens are harvested and stored at -80 °C. A cryostat is used to coronally section the tissue (brain) and thaw-mount the sections onto charged slides. The slide-mounted tissue sections are incubated in (125)I-SI-Ang II to radiolabel Ang II receptors. Adjacent slides are separated into two sets: 'non-specific binding' (NSP) in the presence of a receptor saturating concentration of non-radiolabeled Ang II, or an AT1 Ang II receptor subtype (AT1R) selective Ang II receptor antagonist, and 'total binding' with no AT1R antagonist. A saturating concentration of AT2 Ang II receptor subtype (AT2R) antagonist (PD123319, 10 µM) is also present in the incubation buffer to limit (125)I-SI-Ang II binding to the AT1R subtype. During a 30 min pre-incubation at ~22 °C, NSP slides are exposed to 10 µM PD123319 and losartan, while 'total binding' slides are exposed to 10 µM PD123319. Slides are then incubated with (125)I-SI-Ang II in the presence of PD123319 for 'total binding', and PD123319 and losartan for NSP in assay buffer, followed by several 'washes' in buffer, and water to remove salt and non-specifically bound radioligand. The slides are dried using blow-dryers, then exposed to autoradiography film using a specialized film and cassette. The film is developed and the images are scanned into a computer for visual and quantitative densitometry using a proprietary imaging system and a spreadsheet. An additional set of slides are thionin-stained for histological comparisons. The advantage of using receptor autoradiography is the ability to visualize Ang II receptors in situ, within a section of a tissue specimen, and anatomically identify the region of the tissue by comparing it to an adjacent histological reference section.

IUE observations of Si and C lines and comparison with non-LTE models

Science.gov (United States)

Kamp, L. W.

1982-01-01

Classical model atmosphere techniques are applied to analyze IUE spectra, and to determine abundances, effective temperatures and gravities. Measurements of the equivalent widths and other properties of the line profiles of 24 photospheric lines of Si II, Si III, Si IV, C II, C III and C IV are presented in the range of 1175-1725 A for seven B and two O stars. Observed line profiles are compared with theoretical profiles computed using non-LTE theory and models, and using line-blanketed model atmospheres. Agreement is reasonably good, although strong lines are calculated to be systematically stronger than those observed, while the reverse occurs for weak lines, and empirical profiles have smaller wings than theoretical profiles. It is concluded that the present theory of line formation when used with solar abundances, represents fairly well observed UV photospheric lines of silicon and carbon ions in the atmospheres of main sequence stars of types B5-O9.

'Two-color' reflection multilayers for He-I and He-II resonance lines for micro-UPS using Schwarzschild objective

International Nuclear Information System (INIS)

Ejima, Takeo; Kondo, Yuzi; Watanabe, Makoto

2000-01-01

'Two-color' multilayers reflecting both He-I (58.4 nm) and He-II (30.4 nm) resonance lines have been designed and fabricated for reflection coatings of Schwarzschild objectives of micro-UPS instruments. They are designed so that their reflectances for both He-I and He-II resonance lines are more than 20%. The 'two-color' multilayers are piled double layers coated with top single layers. Fabricated are multilayers of SiC(top layer)-Mg/SiC(double layers) and SiC(top layer)-Mg/Y 2 O 3 (double layers), and their reflectances for the He-I and the He-II are 23% and 17%, and 20% and 23%, respectively

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

24 CFR 888.310 - Notice of eligibility requirements for retroactive payments.

Science.gov (United States)

2010-04-01

..., SECTION 202 DIRECT LOAN PROGRAM, SECTION 202 SUPPORTIVE HOUSING FOR THE ELDERLY PROGRAM AND SECTION 811... MARKET RENTS AND CONTRACT RENT ANNUAL ADJUSTMENT FACTORS Retroactive Housing Assistance Payments for New..., Section 202 Elderly or Handicapped, and Special Allocations Projects § 888.310 Notice of eligibility...

Alkyl-terminated Si(111) surfaces: A high-resolution, core level photoelectron spectroscopy study

Energy Technology Data Exchange (ETDEWEB)

Terry, J.; Linford, M.R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C.E. [Stanford University, Stanford, California 94309 (United States)

1999-01-01

The bonding of alkyl monolayers to Si(111) surfaces has been studied with high-resolution core level photoelectron spectroscopy (PES). Two very different wet-chemical methods have been used to prepare the alkyl monolayers: (i) Olefin insertion into the H{endash}Si bond of the H{endash}Si(111) surface, and (ii) replacement of Cl on the Cl{endash}Si(111) surface by an alkyl group from an alkyllithium reagent. In both cases, PES has revealed a C 1s component shifted to lower binding energy and a Si 2p component shifted to higher binding energy. Both components are attributed to the presence of a C{endash}Si bond at the interface. Along with photoelectron diffraction data [Appl. Phys. Lett. {bold 71}, 1056, (1997)], these data are used to show that these two synthetic methods can be used to functionalize the Si(111) surface. {copyright} {ital 1999 American Institute of Physics.}

Influence of hydrogenation and mechanical grinding on the structural and ferromagnetic properties of GdFeSi

Energy Technology Data Exchange (ETDEWEB)

Chevalier, Bernard; Duttine, Mathieu; Wattiaux, Alain [Universite de Bordeaux, CNRS ICMCB, Pessac (France)

2016-08-01

Hydrogen insertion into GdFeSi induces (i) a structural transition from a tetragonal CeFeSi-type to a tetragonal ZrCuSiAs-type, (ii) an anisotropic expansion of the unit cell parameters because the a parameter decreases, whereas the c parameter increases, and (iii) a decrease in Curie temperature from 121 to 20 K. On the contrary, an amorphous ferromagnet (T{sub C} = 65 K) is obtained by mechanical grinding of GdFeSi. The three compounds (GdFeSi, GdFeSiH, and amorphous GdFeSi) were investigated by {sup 57}Fe Moessbauer spectroscopy. At 4.2 K, this study has revealed that the magnetically ordered Gd substructure produces a small transferred hyperfine magnetic field at the {sup 57}Fe nucleus.

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

An assessment of microstructure, mechanical properties and corrosion resistance of dissimilar welds between Inconel 718 and 310S austenitic stainless steel

International Nuclear Information System (INIS)

Mortezaie, A.; Shamanian, M.

2014-01-01

In the present study, dissimilar welding between Inconel 718 nickel-base superalloy and 310S austenitic stainless steel using gas tungsten arc welding process was performed to determine the relationship between the microstructure of the welds and the resultant mechanical and corrosion properties. For this purpose, three filler metals including Inconel 625, Inconel 82 and 310 stainless steel were used. Microstructural observations showed that weld microstructures for all filler metals were fully austenitic. In tension tests, welds produced by Inconel 625 and 310 filler metals displayed the highest and the lowest ultimate tensile strength, respectively. The results of Charpy impact tests indicated that the maximum fracture energy was related to Inconel 82 weld metal. According to the potentiodynamic polarization test results, Inconel 82 exhibited the highest corrosion resistance among all tested filler metals. Finally, it was concluded that for the dissimilar welding between Inconel 718 and 310S, Inconel 82 filler metal offers the optimum properties at room temperature. - Highlights: • Three filler metals including Inconel 625, Inconel 82 and 310 SS were used. • A columnar to equiaxed dendritic structure was seen for IN-625 weld metal. • A granular austenitic microstructure obtained for Inconel 82 weld metal. • Microstructure of 310 weld metal includes solidification cracks along SSGB. • IN-82 weld metal showed the highest corrosion potential

Supraconductivity of TR-Ru3Si2 compounds (TR = La, Ce)

International Nuclear Information System (INIS)

Godart, C.; Gupta, L.C.; Parks, R.D.; Rauschwalbe, U.; Alheim, U.; Gottwick, U.; Lieke, W.; Steglich, F.

1984-01-01

A new family of superconducting ternary silicides MRu 3 Si 2 with M = La (Tsub(s) approximately 7 K), Y and Th was discovered by Barz and Vandenberg. Same compounds with M from Nd to Tm are magnetic and not superconductors. We studied superconductivity in the solid solution Cesub(1-x)Lasub(x)Ru 3 Si 2 of hexagonal structure from x = 0 to 1. CeRu 3 Si 2 is type II superconductor (Tsub(s) approximately 1 K), like LaRu 3 Si 2 , and is mixed valent (M.V.). Spin fluctuations temperature (Tsub(sf) approximately 440 K) is between these of non superconducting M.V. like CeSn 3 (Tsub(sf) approximately 270) and these of superconducting M.V. like CeRu 2 (Tsub(sf) approximately 770 K). Cesub(1-x)Lasub(x)Ru 3 Si 2 is the first M.V. system of Ce which is superconductor from x = 0 to 1 [fr

Non-LTE Analysis of Interstellar Line Spectra of SiO

Science.gov (United States)

Zhang, Ziwei; Stancil, Phillip C.

2016-01-01

SiO emission lines are important probes of chemical processes in diverse astrophysical environments. In circumstellar outflows of AGB stars, the production of silicate grains is preceded by SiO formation, making SiO a useful measure of Si depletion. SiO is also commonly observed in shocks associated with the outflows of young stellar objects, both low- and high-mass. To model SiO emission for non-LTE conditions requires collisional rate coefficients due to H2 impact which are currently unavailable. Unknown collisional rate coefficients are often estimated from known systems. For the case of SiO-H2, rate coefficients have previously been adapted from a different collider, He (Dayau & Balanca 2006), based on a reduced-mass scaling approach. Recently it has been suggested that scaling via the interaction potential well depth and the reduced masses of the collisional systems may be more reliable (Walker et al. 2014). Using the non-LTE spectral modeling package Radex (van der Tak et al. 2007), we construct diagnostic plots of SiO line ratios using SiO-H2 collisional rate coefficients based on (i) reduced-mass scaling from the LAMDA database, (ii) potential well-depth scaling, and (iii) a more comprehensive input with multiple colliders (H2, He and H). Our goal is to give a more rigorous approach to SiO line emission simulations to better understand Si chemistry, dust formation/destruction, and other astrophysical processes.This work was supported by NASA ATP grant NNX15AI61G.

9 CFR 310.18 - Contamination of carcasses, organs, or other parts.

Science.gov (United States)

2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Contamination of carcasses, organs, or... AND VOLUNTARY INSPECTION AND CERTIFICATION POST-MORTEM INSPECTION § 310.18 Contamination of carcasses... prevent contamination with fecal material, urine, bile, hair, dirt, or foreign matter; however, if...

Energy level alignment at the Si(1 1 1)/RCA–SiO2/copper(II) phthalocyanine ultra-thin film interface

International Nuclear Information System (INIS)

Krzywiecki, Maciej; Grządziel, Lucyna

2014-01-01

Graphical abstract: - Highlights: • The interface formation studies between CuPc and Si by photoemission methods. • Charge rearrangement detected at the inorganic/organic interface. • Existence of disordered/polarization layer at the initial stages of CuPc deposition. • Examined structures applicable for organic transistors development. - Abstract: The photoemission experimental techniques (i.e. ultraviolet photoelectron spectroscopy—UPS and X-ray photoelectron spectroscopy—XPS) were used to investigate the charge–rearrangement–related phenomena occuring at organic–inorganic semiconductor interface. Examined samples were copper phthalocyanine (CuPc) ultra-thin (up to 16 nm) layers deposited onto oxidized silicon Si(1 1 1) of n- and p-type of conductivity. The 1.3-nm-thick silicon oxide was prepared by means of RCA wet cleaning procedure. The analysis of the photoemission data (mainly UPS) suggested the existance of the polarization layer within first 3 nm of CuPc layer thickness. Basing on the UPS and XPS results the energy level diagrams of examined structures have been constructed. In present paper it is suggested that the existance of the polarization layer could be assigned to the disordered adsorption and continous molecular reorientation of the CuPc molecules during the interface formation process. In the terms of the lack of the charge transfer via substrate/organic overlayer interface and disordered adsorption the fluctuations of CuPc electronic parameters were detected. Moreover the ionization energy and the work function parameters of final CuPc layer were affected. The values were more consistent with those obtained for much thicker (over 500 nm) CuPc layers. Performed studies showed that contrary to CuPc layers deposited on native substrates (where the charge transfer via tunnelable oxide – determined as dipole effect – has been detected), the thicker RCA-prepared oxide seems to be non-tunnelable hence the possibility for Si(1 1 1

Sub-barrier fusion of Si+Si systems

Science.gov (United States)

Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

2017-11-01

The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Sub-barrier fusion of Si+Si systems

Directory of Open Access Journals (Sweden)

Colucci G.

2017-01-01

Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Adsorption and thermodynamic studies of Cu(II) and Zn(II) on organofunctionalized-kaolinite

International Nuclear Information System (INIS)

Guerra, Denis Lima; Airoldi, Claudio; Sousa, Kaline S. de

2008-01-01

Kaolinite-bearing clay samples from Perus, Sao Paulo state, Brazil, were used for chemical modification process with dimethyl sulfoxide and organofunctionalized with the silyating agent (RO) 3 Si(CH 2 ) 3 NH(CH 2 ) 2 NH 2 in the present study. The resulting material and natural kaolinite were subjected adsorpion process with Cu(II) and Zn(II) from aqueous solution at pH 6.0 and controlated temperature of 298 K. The Langmuir adsorption isotherm model has been applied to fit the experimental data. The results showed that the chemical modification process increases the basal spacing of the natural kaolinite from 0.711 to 0.955 nm. The energetic effects caused by Cu(II) and Zn(II) interactions were determined through calorimetric titration at the solid-liquid interface and gave a net thermal effect that enabled the calculation of the exothermic values and the equilibrium constant

Joining of SiC ceramics and SiC/SiC composites

Energy Technology Data Exchange (ETDEWEB)

Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

1996-08-01

This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

Mn(ii) mediated degradation of artemisinin based on Fe3O4@MnSiO3-FA nanospheres for cancer therapy in vivo

Science.gov (United States)

Chen, Jian; Zhang, Weijie; Zhang, Min; Guo, Zhen; Wang, Haibao; He, Mengni; Xu, Pengping; Zhou, Jiajia; Liu, Zhenbang; Chen, Qianwang

2015-07-01

improving the survival of chemotherapy patients, providing a novel method for clinical tumor therapy. Electronic supplementary information (ESI) available: Iron mediated degradation mechanism for artemisinin, mechanism of alkylation of iron(ii)-heme or iron(ii)/heme dimethylester by artemisinin, mechanism of alkylation of the heme model MnIITPP by artemisinin, schematic illustration of the synthesis of ART-loaded Fe3O4@MnSiO3-FA nanospheres, further characterization such as XRD and EDX patterns, N2 adsorption and desorption isotherm and BJH pore distribution, FT-IR spectra, UV-vis spectra, DLS and parallel test results of flow cytometric detection are given in Fig. S1-S13, Fe2+ or Mn2+ release from Fe3O4@MnSiO3 nanospheres in PBS at different pHs is given in Table S1. See DOI: 10.1039/c5nr02402a

21 CFR 1404.310 - What must I do if a Federal agency excludes a person with whom I am already doing business in a...

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 9 2010-04-01 2010-04-01 false What must I do if a Federal agency excludes a person with whom I am already doing business in a covered transaction? 1404.310 Section 1404.310 Food and...) Responsibilities of Participants Regarding Transactions Doing Business with Other Persons § 1404.310 What must I do...

The Formation of Metal (M=Co(II), Ni(II), and Cu(II)) Complexes by Aminosilanes Immobilized within Mesoporous Molecular Sieves

International Nuclear Information System (INIS)

Park, Dong Ho; Park, Sung Soo; Choe, Sang Joon

1999-01-01

The immobilization of APTMS(3-(2-aminoethylamino)propyltrimethoxysilane) and AAPTMS(3-(2-(2-aminoethyl) aminoethylamino)propyltrimethoxysilane) on the surface of high quality mesoporous molecular sieves MCM-41 and MCM-48 have been confirmed by F.T.-IR spectroscopy, Raman spectroscopy, 29 Si solid state NMR, and a surface polarity measurement using Reichardt's dye. The formation of metal (Co(II), Ni(II), and Cu(II)) complexes by immobilized aminosilanes have been investigated by photoacoustic spectroscopy(PAS). The assignment of UV-Vis. PAS bands makes it possible to identify the structure of metal complexes within mesoporous molecular sieves. Co(II) ion may be coordinated mainly in a tetrahedral symmetry by two APTMS onto MCM-41, and in an octahedral one by two AAPTMS. Both Ni(II) and Cu(II) coordinated by aminosilanes within MCM-41 form possibly the octahedral complexes such as [Ni(APTMS) 2 (H 2 O) 2 ] 2+ , [Ni(AAPTMS) 2 ] 2+ , [Cu(APTMS) 2 (H 2 O) 2 ] 2+ , and [Cu(AAPTMS)(H 2 O) 3 ] 2+ , respectively. The PAS band shapes of complexes onto MCM-48 are similar to those of corresponding MCM-41 with the variation of PAS intensity. Most of metal ion(II) within MCM-41 and MCM-48 are coordinated by aminosilanes without the impregnation on the surface

Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Science.gov (United States)

Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

2002-10-01

Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

The First European Parabolic Flight Campaign with the Airbus A310 ZERO-G

Science.gov (United States)

Pletser, Vladimir; Rouquette, Sebastien; Friedrich, Ulrike; Clervoy, Jean-Francois; Gharib, Thierry; Gai, Frederic; Mora, Christophe

2016-12-01

Aircraft parabolic flights repetitively provide up to 23 seconds of reduced gravity during ballistic flight manoeuvres. Parabolic flights are used to conduct short microgravity investigations in Physical and Life Sciences and in Technology, to test instrumentation prior to space flights and to train astronauts before a space mission. The use of parabolic flights is complementary to other microgravity carriers (drop towers, sounding rockets), and preparatory to manned space missions on board the International Space Station and other manned spacecraft, such as Shenzhou and the future Chinese Space Station. After 17 years of using the Airbus A300 ZERO-G, the French company Novespace, a subsidiary of the ' Centre National d'Etudes Spatiales' (CNES, French Space Agency), based in Bordeaux, France, purchased a new aircraft, an Airbus A310, to perform parabolic flights for microgravity research in Europe. Since April 2015, the European Space Agency (ESA), CNES and the ` Deutsches Zentrum für Luft- und Raumfahrt e.V.' (DLR, the German Aerospace Center) use this new aircraft, the Airbus A310 ZERO-G, for research experiments in microgravity. The first campaign was a Cooperative campaign shared by the three agencies, followed by respectively a CNES, an ESA and a DLR campaign. This paper presents the new Airbus A310 ZERO-G and its main characteristics and interfaces for scientific experiments. The experiments conducted during the first European campaign are presented.

29 CFR 1952.310 - Description of the plan as initially approved.

Science.gov (United States)

2010-07-01

... proposes to define the occupational safety and health issues covered by it as defined by the Secretary of Labor in 29 CFR 1902.2(c)(1). All occupational safety and health standards promulgated by the U.S... Section 1952.310 Labor Regulations Relating to Labor (Continued) OCCUPATIONAL SAFETY AND HEALTH...

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Science.gov (United States)

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

International Nuclear Information System (INIS)

Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

2011-01-01

The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

Superconductivity of Ba8Si46-xGax clathrates

Science.gov (United States)

Li, Yang; Zhang, Ruihong; Chen, Ning; Ma, Xingqiao; Cao, Guohui; Luo, Z. P.; Hu, C. R.; Ross, Joseph H., Jr.

2007-03-01

We have presented a combined experimental and theoretical study of the effect of Gallium substitution on the superconductivity of the type I clathrate Ba8Si46-xGax. In Ga-doped clathrates, the Ga state is found to be strongly hybridized with the cage conduction-band state. Ga substitution results in a shift toward to a lower energy, a decrease of density of states at Fermi level, a lowering of the carrier concentration and a breakage of integrity of the sp3 hybridized networks. These play key roles in the suppression of superconductivity. For Ba8Si40Ga6, the onset of the superconducting transition occurs at Tc=3.3 K. The investigation of the magnetic superconducting state shows that Ba8Si40Ga6 is a type II superconductor. The critical magnetic fields were measured to be Hc1=35 Oe and Hc2=8.5 kOe. Our estimate of the lectron-phonon coupling reveals that Ba8Si40Ga6 is a moderate phonon-mediated BCS superconductor.

Single-crystal X-ray diffraction study of Cs{sub 2}Er[Si{sub 6}O{sub 14}]F and Cs{sub 2}Er[Si{sub 4}O{sub 10}]F

Energy Technology Data Exchange (ETDEWEB)

Dabic, Predrag; Kremenovic, Aleksandar; Vulic, Predag [Belgrade Univ. (Serbia). Lab. of Crystallography; Kahlenberg, Volker; Schmidmair, Daniela [Innsbruck Univ. (Austria). Inst. of Mineralogy and Petrography

2016-07-01

Single-crystal growth experiments in the system CsF-Er{sub 2}O{sub 3}-SiO{sub 2} resulted in the simultaneous crystallization of two chemically related compounds within the same run: Cs{sub 2}Er[Si{sub 6}O{sub 14}]F (phase I) and Cs{sub 2}Er[Si{sub 4}O{sub 10}]F (phase II). They represent the first examples for cesium erbium silicates containing fluorine. Basic crystallographic data are - phase I: space group Cmca, a=17.2556(6) Aa, b=24.6565(7) Aa, c=14.4735(5) Aa, V=6157.9(3) Aa{sup 3}, Z=16; phase II: space group Pnma, a=22.3748(7) Aa, b=8.8390(2) Aa, c=11.9710(4) Aa, V=2367.5(1) Aa{sup 3}, Z=8. The structures were determined by direct methods and refined to residuals of R(vertical stroke F vertical stroke)=0.0229 for 2920 (phase I) and 0.0231 for 2314 (phase II) independent observed reflections with I>2σ(I). The structure of phase I represents a previously unknown structure type with a three dimensional tetrahedral framework consisting of Q{sup 3} and Q{sup 4} groups in the ratio 2:1. Basic building units of the network are unbranched sechser single-chains running parallel to [001]. The network can be conveniently built up from the condensation of tetrahedral layers parallel to (010) or (100), respectively. The crystal structure of phase II can be classified as a tubular or columnar chain silicate indicating that the backbones of the structure are multiple chains of silicate tetrahedra. This structure is isotypic to a Cs{sub 2}Y[Si{sub 4}O{sub 10}]F, a compound that has been characterized previously. Alternatively, both compounds can be described as mixed octahedral-tetrahedral frameworks, which can be classified according to their polyhedral microensembles. A topological analysis of both nets is presented.

Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

International Nuclear Information System (INIS)

Liu Hongfei; Tan Chengcheh; Chi Dongzhi

2012-01-01

β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

9 CFR 310.6 - Carcasses and parts passed for cooking; marking.

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2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Carcasses and parts passed for cooking... INSPECTION AND CERTIFICATION POST-MORTEM INSPECTION § 310.6 Carcasses and parts passed for cooking; marking. Carcasses and parts passed for cooking shall be marked conspicuously on the surface tissues thereof by a...

Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study

International Nuclear Information System (INIS)

Nakayama, T.; Kobinata, K.

2012-01-01

Schottky-barrier changes by the segregation and structural disorder are studied using the first-principles calculations and adopting Au/Si interface. The Schottky barrier for electrons simply decreases as increasing the valency of segregated atoms from II to VI families, which variation is shown closely related to how the Si atoms are terminated at the interface. On the other hand, the structural disorders (defects) prefer to locate near the interface and the Schottky barrier for hole carriers does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials reflecting the appearance of Si dangling bonds.

Impact of material system thermomechanics and thermofluid performance on He-cooled ceramic breeder blanket designs with SiCf/SiC

International Nuclear Information System (INIS)

Ying, Alice Y.; Yokomine, Takehiko; Shimizu, Akihiko; Abdou, Mohamed; Kohyama, Akira

2004-01-01

This paper presents results from a recent effort initiated under the JUPITER-II collaborative program for high temperature gas-cooled blanket systems using SiC f /SiC as a structural material. Current emphasis is to address issues associated with the function of the helium gas considered in the DREAM and ARIES-I concepts by performing thermomechanical and thermofluid analysis. The objective of the analysis is to guide future research focus for a task in the project. It is found that the DREAM concept has the advantage of achieving uniform temperature without threatening blanket pebble bed integrity by differential thermal stress. However, its superiority needs to be further justified by investigating the feasibility and economic issues involved in the tritium extraction technology

Impact of material system thermomechanics and thermofluid performance on He-cooled ceramic breeder blanket designs with SiCf/SiC

International Nuclear Information System (INIS)

Ying, A.Y.; Abdou, M.; Yokomine, T.; Shimizu, A.; Kohyama, A.

2008-01-01

This paper presents results from a recent effort initiated under the JUPITER-II collaborative program for high temperature gas-cooled blanket systems using SiC/SiC as a structural material. Current emphasis is to address issues associated with the function of the helium gas considered in the DREAM and ARIES-I concepts by performing thermomechanical and thermofluid analysis. The objective of the analysis is to guide future research focus for a task in the project. It is found that the DREAM concept has the advantage of achieving uniform temperature without threatening blanket pebble bed integrity by differential thermal stress. However, its superiority needs to be further justified by investigating the feasibility and economic issues involved in the tritium extraction technology. (author)

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

International Nuclear Information System (INIS)

Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

2011-01-01

For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

21 CFR 310.544 - Drug products containing active ingredients offered over-the-counter (OTC) for use as a smoking...

Science.gov (United States)

2010-04-01

... offered over-the-counter (OTC) for use as a smoking deterrent. 310.544 Section 310.544 Food and Drugs FOOD... ingredients offered over-the-counter (OTC) for use as a smoking deterrent. (a) Any product that bears labeling claims that it “helps stop or reduce the cigarette urge,” “helps break the cigarette habit,” “helps stop...

Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

Directory of Open Access Journals (Sweden)

Dan Zhu

2014-03-01

Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

Energy Technology Data Exchange (ETDEWEB)

Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

1986-02-15

Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

Corrosion resistance of Ni-50Cr HVOF coatings on 310S alloy substrates in a metal dusting atmosphere

Energy Technology Data Exchange (ETDEWEB)

Saaedi, J. [Centre for Advanced Coating Technologies, Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4 (Canada); Department of Materials and Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Arabi, H.; Mirdamadi, S.; Ghorbani, H. [Department of Materials and Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Coyle, T.W. [Centre for Advanced Coating Technologies, Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4 (Canada)

2011-09-15

Metal dusting attack has been examined after three 168 h cycles on two Ni-50Cr coatings with different microstructures deposited on 310S alloy substrates by the high velocity oxy-fuel (HVOF) thermal-spray process. Metal dusting in uncoated 310S alloy specimens was found to be still in the initiation stage after 504 h of exposure in the 50H{sub 2}:50CO gas environment at 620 C. Dense Ni-50Cr coatings offered suitable resistance to metal dusting. Metal dusting was observed in the 310S substrates adjacent to pores at the interface between the substrate and a porous Ni-50Cr coating. The porosity present in the as-deposited coatings was shown to introduce a large variability into coating performance. Carbon formed by decomposition of the gaseous species accumulated in the surface pores and resulted in the dislodgement of surface splats due to stresses generated by the volume changes. When the corrosive gas atmosphere was able to penetrate through the interconnected pores and reach the coating-substrate interface, the 310S substrate was carburized, metal dusting attack occurred, and the resulting formation of coke in the pores led to local failure of the coating. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Total cross-sections assessment of neutron reaction with stainless steel SUS-310 contained in various nuclear data files

International Nuclear Information System (INIS)

Suwoto

2002-01-01

The integral testing of neutron cross-sections for Stainless Steel SUS-310 contained in various nuclear data files have been performed. The shielding benchmark calculations for Stainless Steel SUS-310 has been analysed through ORNL-Broomstick Experiment calculation which performed by MAERKER, R.E. at ORNL - USA ( 1) . Assessment with JENDL-3.1, JENDL-3.2, ENDF/B-IV, ENDF/B-VI nuclear data files and data from GEEL have also been carried out. The overall calculation results SUS-310 show in a good agreement with the experimental data, although, underestimate results appear below 3 MeV for all nuclear data files. These underestimation tendencies clearly caused by presented of iron nuclide which more than half in Stainless Steel compound. The total neutron cross-sections of iron nuclide contained in various nuclear data files relatively lower on that energy ranges

Eight joint BER II and BESSY II users meeting. Abstracts

International Nuclear Information System (INIS)

2016-01-01

The following topics were dealt with: Accelerator operation and projecs, photon science and instrumentation at BESSY II, status of energy materials in-situ Lab at BESSY II, high resolution spectrometer PEAXIS at BESSY II, sample environment at BESSY II, molecular control mechanisms in the Brr2 RNA helicase for efficient and regulated splicing, the Li conversion reaction of 4CoFe_2O_4 nanoparticles, buried interfaces in lithium ion batteries probed with HAXPES, ARPES studies of the STO(001) 2DEG, all-in/all-out magnetic order in rare earth iridates, oxygen reduction reaction on graphene in Li-air batteries, electronic order in high-T_c superconductors, in-siu observation of novel switching phenomena in highly porous metal-organic frameworks, photoinduced demagnetization and insulator-to-metal transition in ferromagnetic insulating BaFeO_3 thin films, ARPES measurement of the ferroelectric bulk Rashba system GeTe, bisphenol A on Cu(111) and Ag(111), reverse water-gas shift or Sabathier methanation on N(110), structural studies of molecular machines, multi-MHz time-of-flight electronic band-structure imaging of graphene on Ir(111), diffusion pathways in ion conductors, ground-state potential energy surfaces around selected atoms from resonant inelastic X-ray scattering, solar energy in an emerging country, in-situ neutron analysis of electrode materials for electrochemical energy storage, structure and transport properties in thermoelectric skutterudites, investigation of the interphase formation on solid lithium-ion conductors by neutron reflectometry, load partitin and damage characterization of cast AlSi_1_2CuMgNi alloy with ceramic reinforcement, methane adsorption in highly porous metal-organics, structure and magnetic interactions in dimer system Ba_(_3_-_x_)Sr_xCr_2O_8, distribution of S in C-S nanocomposites, current status of HFM-EXED FACITIY; SPIN NEAMTICITY IN s=1/2 frustrated zigzag chaIN β-TeVO_4, electronic properties of U(Ru_0_._9_2Rh_0_._0_8)_2Si_2 in

Active immunization with the peptide epitope vaccine Aβ3-10-KLH induces a Th2-polarized anti-Aβ antibody response and decreases amyloid plaques in APP/PS1 transgenic mice.

Science.gov (United States)

Ding, Li; Meng, Yuan; Zhang, Hui-Yi; Yin, Wen-Chao; Yan, Yi; Cao, Yun-Peng

2016-11-10

Active amyloid-β (Aβ) immunotherapy is effective in preventing Aβ deposition, facilitating plaque clearance, and improving cognitive functions in mouse models of Alzheimer's disease (AD). Developing a safe and effective AD vaccine requires a delicate balance between inducing adequate humoral immune responses and avoiding T cell-mediated autoimmune responses. In this study, we designed 2 peptide epitope vaccines, Aβ3-10-KLH and 5Aβ3-10, prepared respectively by coupling Aβ3-10 to the immunogenic carrier protein keyhole limpet hemocyanin (KLH) or by joining 5 Aβ3-10 epitopes linearly in tandem. Young APP/PS1 mice were immunized subcutaneously with Aβ3-10-KLH or 5Aβ3-10 mixed with Freund's adjuvant, and the immunopotencies of these Aβ3-10 peptide vaccines were tested. Aβ3-10-KLH elicited a robust Th2-polarized anti-Aβ antibody response and inhibited Aβ deposition in APP/PS1 mice. However, 5Aβ3-10 did not induce an effective humoral immune response. These results indicated that Aβ3-10-KLH may be a safe and efficient vaccine for AD and that conjugating the antigen to a carrier protein may be more effective than linking multiple peptide antigens in tandem in applications for antibody production and vaccine preparation. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Small interfering RNA targeted to stem-loop II of the 5' untranslated region effectively inhibits expression of six HCV genotypes

Directory of Open Access Journals (Sweden)

Dash Srikanta

2006-11-01

Full Text Available Abstract Background The antiviral action of interferon alpha targets the 5' untranslated region (UTR used by hepatitis C virus (HCV to translate protein by an internal ribosome entry site (IRES mechanism. Although this sequence is highly conserved among different clinical strains, approximately half of chronically infected hepatitis C patients do not respond to interferon therapy. Therefore, development of small interfering RNA (siRNA targeted to the 5'UTR to inhibit IRES mediated translation may represent an alternative approach that could circumvent the problem of interferon resistance. Results Four different plasmid constructs were prepared for intracellular delivery of siRNAs targeting the stem loop II-III of HCV 5' UTR. The effect of siRNA production on IRES mediated translation was investigated using chimeric clones between the gene for green fluorescence protein (GFP and IRES sequences of six different HCV genotypes. The siRNA targeted to stem loop II effectively mediated degradation of HCV IRES mRNA and inhibited GFP expression in the case of six different HCV genotypes, where as siRNAs targeted to stem loop III did not. Furthermore, intracytoplasmic expression of siRNA into transfected Huh-7 cells efficiently degraded HCV genomic RNA and inhibited core protein expression from infectious full-length infectious clones HCV 1a and HCV 1b strains. Conclusion These in vitro studies suggest that siRNA targeted to stem-loop II is highly effective inhibiting IRES mediated translation of the major genotypes of HCV. Stem-loop II siRNA may be a good target for developing an intracellular immunization strategy based antiviral therapy to inhibit hepatitis C virus strains that are not inhibited by interferon.

Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

2011-03-15

We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Organisation on Photosystem I and Photosystem II in red alga Cyanidium caldarium: encounter of cyanobacterial and higher plant concepts

Czech Academy of Sciences Publication Activity Database

Gardian, Zdenko; Bumba, Ladislav; Schrofel, A.; Herbstová, Miroslava; Nebesářová, Jana; Vácha, František

2007-01-01

Roč. 1767, č. 6 (2007), s. 725-731 ISSN 0005-2728 R&D Projects: GA AV ČR IAA608170603; GA ČR GP310/07/P115; GA ČR GA206/06/0364 Institutional research plan: CEZ:AV0Z50510513; CEZ:AV0Z60220518 Keywords : Photosystem I * Photosystem II Subject RIV: BO - Biophysics Impact factor: 3.835, year: 2007

In-Situ Immobilization of Ni Complex on Amine-Grafted SiO₂ for Ethylene Polymerization.

Science.gov (United States)

Lee, Sang Yun; Ko, Young Soo

2018-02-01

The results on the In-Situ synthesis of Ni complex on amine-grafted SiO2 and its ethylene polymerization were explained. SiO2/2NS/(DME)NiBr2 and SiO2/3NS/(DME)NiBr2(Ni(II) bromide ethylene glycol dimethyl ether) catalysts were active for ethylene polymerization. The highest activity was shown at the polymerization temperature of 25 °C, and SiO2/2NS/(DME)NiBr2 exhibited higher activity than SiO2/3NS/(DME)NiBr2. The PDI values of SiO2/2NS/(DME)NiBr2 were in the range of 8~18. The aminosilane compounds and Ni were evenly grafted and distributed in the silica. It was proposed that DME ligand was mostly removed during the supporting process, and only NiBr2 was complexed with the amine group of 2NS based on the results of FT-IR and ethylene polymerization.

Mode I and Mode II Interlaminar Crack Growth Resistances of Ceramic Matrix Composites at Ambient Temperature

National Research Council Canada - National Science Library

Choi, Sung R; Kowalik, Robert W; Alexander, Donald J

2007-01-01

...) including three gas-turbine grade melt-infiltrated SiC/SiC composites. Modes I and II crack growth resistances, GI and GII, were evaluated at ambient temperature using double cantilever beam and end notched flexure methods, respectively...

Strained Si/SiGe MOS transistor model

Directory of Open Access Journals (Sweden)

Tatjana Pešić-Brđanin

2009-06-01

Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

U-Mo/Al-Si interaction: Influence of Si concentration

International Nuclear Information System (INIS)

Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

2010-01-01

Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

Porous SiC/SiC composites development for industrial application

International Nuclear Information System (INIS)

Maeta, S.; Hinoki, T.

2014-01-01

Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

Switchable photosystem-II designer algae for photobiological hydrogen production

Science.gov (United States)

Lee, James Weifu

2010-01-05

A switchable photosystem-II designer algae for photobiological hydrogen production. The designer transgenic algae includes at least two transgenes for enhanced photobiological H.sub.2 production wherein a first transgene serves as a genetic switch that can controls photosystem II (PSII) oxygen evolution and a second transgene encodes for creation of free proton channels in the algal photosynthetic membrane. In one embodiment, the algae includes a DNA construct having polymerase chain reaction forward primer (302), a inducible promoter (304), a PSII-iRNA sequence (306), a terminator (308), and a PCR reverse primer (310). In other embodiments, the PSII-iRNA sequence (306) is replaced with a CF.sub.1-iRNA sequence (312), a streptomycin-production gene (314), a targeting sequence (316) followed by a proton-channel producing gene (318), or a PSII-producing gene (320). In one embodiment, a photo-bioreactor and gas-product separation and utilization system produce photobiological H.sub.2 from the switchable PSII designer alga.

Zodiac II: Debris Disk Science from a Balloon

Science.gov (United States)

Bryden, Geoffrey; Traub, Wesley; Roberts, Lewis C., Jr.; Bruno, Robin; Unwin, Stephen; Backovsky, Stan; Brugarolas, Paul; Chakrabarti, Supriya; Chen, Pin; Hillenbrand, Lynne;

Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

Energy Technology Data Exchange (ETDEWEB)

Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

2005-08-01

SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

Science.gov (United States)

Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

2018-04-01

The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

A comparative study of three ternary complexes prepared in different mixing orders of siRNA/redox-responsive hyperbranched poly (amido amine/hyaluronic acid

Directory of Open Access Journals (Sweden)

Chen CJ

2012-07-01

Full Text Available Cheng-Jun Chen,1 Zhi-Xia Zhao,1 Jian-Cheng Wang,1 En-Yu Zhao,1 Ling-Yan Gao,1 Shu-Feng Zhou,2 Xiao-Yan Liu,1 Wan-Liang Lu,1 Qiang Zhang11State Key Laboratory of Natural and Biomimetic Drugs, Department of Pharmaceutics, School of Pharmaceutical Science, Peking University, Beijing, People’s Republic of China; 2Department of Pharmaceutical Sciences, College of Pharmacy, University of South Florida, Tampa, FL, USAAbstract: In this study, a novel redox-responsive hyperbranched poly(amido amine (named PCD was synthesized and used as a cationic polymer to form a ternary complex with small interfering RNA (siRNA and hyaluronic acid (HA for siRNA delivery. Here, it is hypothesized that different mixing orders result in different assembly structures, which may affect the siRNA delivery efficiency. To investigate the effects of mixing orders on siRNA delivery efficiency in two human breast cancer cell lines, three ternary complexes with different mixing orders of siRNA/PCD/HA were prepared and characterized: mixing order I (initially prepared siRNA/PCD binary complex further coated by negatively charged HA, mixing order II (initially prepared HA/PCD binary complex further incubated with siRNA, and mixing order III (initially prepared siRNA/HA mixture further electrostatically compacted by positively charged PCD. With an optimized siRNA/PCD/HA charge ratio of 1/20/16, the particle sizes and zeta potentials of these ternary complexes were 124.8 nm and 27.3 mV (mixing order I, 147.5 nm and 29.9 mV (mixing order II, and 128.8 nm and 19.4 mV (mixing order III. Also, the effects on stability, cellular uptake, and gene silencing efficiency of siRNA formulated in ternary complexes with different mixing orders were investigated. The results showed that mixing orders I and III displayed better siRNA transfection and protection than mixing order II in human breast cancer MCF-7 and MDA-MB-231 cells. More interesting, at the siRNA/PCD/HA charge ratio of 1/20/16, the

TPO characterization of ethanol reduced Pd nanoparticles supported on SiO$_{2}$

CERN Document Server

Horváth, A; Sarkany, A; Guczi, L

2002-01-01

Silica-supported Pd catalysts were prepared at 298-353 K from Pd(II) chloride or Pd(II) acetate in suspension of SiO/sub 2/ and ethanol- water or ethanol-toluene mixtures, respectively. Reduction of Pd ions diffusing from liquid phase was ensured in an ethanol-rich adsorption layer covering the SiO/sub 2/ particles. Temperature-programmed oxidation (TPO) measurements were performed to characterize the organic impurities retained by solid phase. Vapour phase reduction /adsorption experiments with ethanol confirmed that under the reported reduction conditions, the Pd nanoparticles decompose ethanol and the CO formed remains chemisorbed on the Pd sites. Upon contacting the samples with air during the drying process to eliminate the solvent, the CO molecules are immediately removed from Pd sites by O/sub 2/, and thereby, a significant fraction (22-34%) of Pd sites becomes accessible for catalytic reactions. (33 refs).

Collective-pinning properties of superconducting a-NbxGe and a-MoxSi films

International Nuclear Information System (INIS)

Woerdenweber, R.

1987-01-01

This thesis describes a study of superconducting flux pinning in amorphous NbGe and MoSi films of various compositions and thickness. Amorphous NbGe and MoSi alloys belong to the weak-coupling type-II superconductors in the extreme dirty limit. This feature enables to determine several important superconducting parameters from well-known theoretical expressions. It is also responsible for the weak pinning, which is necessary to observe the two-dimensional collective pinning properties according to the Larkin-Ovchinnikov theory. (Auth.)

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Directory of Open Access Journals (Sweden)

Jiongjiong Mo

2017-01-01

Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

Structure change in 25 Cr - 20 Ni steels as a function of their Cr, Ni, Si and W content

International Nuclear Information System (INIS)

Gribaudo, L.M.; Durand, F.; Durand-Charre, M.

1983-01-01

The influence of varying the Cr, Ni, Si and W concentrations on the type and composition of the carbides of solidification and on the phase shift temperature is studied with 18 alloys of composition close to stainless steel-25-20 (AISI 310) composition. Experimental techniques used are differential thermal analysis, microprobe and scanning electron microscope. Crystallization is interpreted with the equilibrium diagram Ni-Cr-C. The formation of the interdendritic σ phase for a chromium rich alloys is interpreted with the phase equilibrium diagram of Fe-Ni-Cr-C. Mechanical properties and corrosion resistance are dependent on the morphology of the carbides M 7 C 3 and M 23 C 6 [fr

Development of Ge/NbSi detectors for EDELWEISS-II with identification of near-surface events

International Nuclear Information System (INIS)

Juillard, A.; Marnieros, S.; Dolgorouky, Y.; Berge, L.; Collin, S.; Fiorucci, S.; Lalu, F.; Dumoulin, L.

2006-01-01

The actual limitation of Ge ionization heat cryogenic detectors for direct WIMP detection such as EDELWEISS arises from incomplete charge collection for near-surface events. We present results on Ge/NbSi detectors that are fitted with segmented electrodes and two NbSi Anderson insulator thermometric layers. Three such bolometers were studied in the low-background cryostat of the EDELWEISS collaboration in the LSM: analysis of the athermal signals allows us to identify and reject events occurring in the first millimeter under the electrodes

Development of Ge/NbSi detectors for EDELWEISS-II with identification of near-surface events

Energy Technology Data Exchange (ETDEWEB)

Juillard, A. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France)]. E-mail: juillard@csnsm.in2p3.fr; Marnieros, S. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Dolgorouky, Y. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Berge, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Collin, S. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Fiorucci, S. [C.E.A, Centre d' etudes Nucleaires de Saclay, DSM/DAPNIA, Gif. Yvette, Cedex 91191n (France); Lalu, F. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Dumoulin, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France)

2006-04-15

The actual limitation of Ge ionization heat cryogenic detectors for direct WIMP detection such as EDELWEISS arises from incomplete charge collection for near-surface events. We present results on Ge/NbSi detectors that are fitted with segmented electrodes and two NbSi Anderson insulator thermometric layers. Three such bolometers were studied in the low-background cryostat of the EDELWEISS collaboration in the LSM: analysis of the athermal signals allows us to identify and reject events occurring in the first millimeter under the electrodes.

Adsorption of metal-phthalocyanine molecules onto the Si(111) surface passivated by δ doping: Ab initio calculations

Science.gov (United States)

Veiga, R. G. A.; Miwa, R. H.; McLean, A. B.

2016-03-01

We report first-principles calculations of the energetic stability and electronic properties of metal-phthalocyanine (MPc) molecules (M = Cr, Mn, Fe, Co, Ni, Cu, and Zn) adsorbed on the δ -doped Si(111)-B (√{3 }×√{3 }) reconstructed surface. (i) It can be seen that CrPc, MnPc, FePc, and CoPc are chemically anchored to the topmost Si atom. (ii) Contrastingly, the binding of the NiPc, CuPc, and ZnPc molecules to the Si (111 ) -B (√{3 }×√{3 }) surface is exclusively ruled by van der Waals interactions, the main implication being that these molecules may diffuse and rearrange to form clusters and/or self-organized structures on this surface. The electronic structure calculations reveal that in point (i), owing to the formation of the metal-Si covalent bond, the net magnetic moment of the molecule is quenched by 1 μB , remaining unchanged in point (ii). In particular, the magnetic moment of CuPc (1 μB ) is preserved after adsorption. Finally, we verify that the formation of ZnPc, CuPc, and NiPc molecular (self-assembled) arrangements on the Si(111)-B (√{3 }×√{3 } ) surface is energetically favorable, in good agreement with recent experimental findings.

Differential cross sections of the pp -> pp pi sup 0 reaction from 310 to 425 MeV

CERN Document Server

Zlomanczuk, Yu; Brodowski, W; Calén, H; Clement, H; Dyring, J; Ekström, C; Fäldt, G; Fransson, K; Gustafsson, L; Häggström, S; Hoeistad, B; Johanson, J; Johansson, A; Johansson, T; Kilian, K; Kullander, Sven; Kupsc, A; Marciniewski, P; Morosov, B; Moertsell, A; Oelert, W; Ruber, Roger J M Y; Schuberth, U; Sundberg, P; Shwartz, B A; Stepaniak, J; Sukhanov, A; Turowiecki, A; Wagner, G J; Wilhelmi, Z; Wilkin, C; Zabierowski, J; Zernov, A

2000-01-01

Measurements of the differential cross sections of the pp -> pp pi sup 0 reaction at 310, 320, 340, 360, 400 and 425 MeV have been carried out at the CELSIUS storage ring in Uppsala. An attempt has been made to describe the distributions obtained in terms of the five partial waves Ss, Ps, Pp, Sd and Ds. The relative contributions from the different states depend significantly upon the energy. For instance, that of the Ss state drops from about 80% at 310 MeV to around 10% at 425 MeV.

Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

Science.gov (United States)

Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

2013-09-01

We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

The Effect of Replacing Fish Meal in the Diet with Enzyme-Treated Soybean Meal (HP310) on Growth and Body Composition of Rainbow Trout Fry.

Science.gov (United States)

Haghbayan, Samira; Shamsaie Mehrgan, Mehdi

2015-11-26

The potential of enzyme-treated soybean meal powder (HP310) as fish meal alternative in diets for rainbow trout weighing 1.17 ± 0.3 g was evaluated for 60 days. Fish meal was replaced with HP310 at 25%, 50%, 75% and 100% of experimental diets. A control group was also considered. The results showed that diets containing 75% and 100% HP310 had significantly higher feed conversion ratio and lower feed intake, weight gain and specific growth rate compared to fish feed diets containing higher levels of fish protein ingredients (p replacement levels of diet (p > 0.05). However increasing in level of HP310 in the diet caused a significant increase of the white blood cells (p replaced by HP310 showed the highest values of ash and moisture content among the diets and showed significantly different levels when compared with the control and other feeding treatments (p < 0.05).

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

Science.gov (United States)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

Synthesis of Conformationally North-Locked Pyrimidine Nucleosides Built on an Oxabicyclo[3.1.0]hexane Scaffold | Center for Cancer Research

Science.gov (United States)

Beginning with a known 3-oxabicyclo[3.1.0]-hexane scaffold, the relocation of the fused cyclopropane ring bond and the shifting of the oxygen atom to an alternative location engendered a new 2-oxabicyclo[3.1.0]hexane template that mimics more closely the tetrahydrofuran ring of conventional nucleosides. The synthesis of this new class of locked nucleosides involved a novel

Protection against wing icing for Airbus A300 and A310

Science.gov (United States)

Woelfer, G.

1981-01-01

To improve economy of operation, it is now planned to modify the anti-icing system used on the A300 Airbus wing. Thus, for the A310 Airbus, the deicing system will be applied to only half the wing length. Other essential modifications are a substantial simplification of the warm-air system and discontinuation of the use of a double wall in slats.

Modes of oxidation in SiC-reinforced mullite/ZrO2 composites: Oxidation vs depth behavior

International Nuclear Information System (INIS)

Lin, C.C.; Ruh, R.

1999-01-01

Two basic oxidation modes of composites with oxidizing particles in a non-oxidizing matrix have been observed. Mode I is defined as the complete oxidation of all the particles within an outer layer of the composite, while mode II exhibits partial oxidation of the particles, deep into the composite. Using microscopic observations to plot the silica layer thickness on particles (whiskers) vs the depth of the particles (whiskers) below the composite surface is proposed as a powerful means of categorizing and quantifying actual oxidation modes. Thus, mullite/SiC-whisker composites were found to have mode I oxidation behavior, while certain (mullite + ZrO 2 )/SiC-whisker composites were found to exhibit mode II behavior, followed by a mixed mode after severe exposures. It is proposed that mode II behavior appears when oxygen diffusivity in the matrix is much higher than that in the product oxide layer

Forging of cast Mg-3Sn-2Ca-0.4Al-0.4Si magnesium alloy using processing map

International Nuclear Information System (INIS)

Rao, K. P.; Suresh, K.; Prasad, Y. V. R. K.; Hort, N.; Kainer, K. U.

2016-01-01

Mg-3Sn-2Ca (TX32) alloy has good creep resistance but limited workability. Minor amounts of Al and Si have been added to TX32 for improving its hot workability. The processing map for the TX32-0.4Al-0.4Si alloy exhibited two workability domains in the temperature and strain rate ranges: (1) 310-415.deg.C/0.0003-0.003 s-1 and (2) 430-500.deg.C/0.003-3 s-1. The alloy exhibited flow instability at temperatures < 350.deg.C at strain rates > 0.01 s-1. The alloy has been forged to produce a cup shape component to validate these findings of processing map. Finite-element (FE) simulation has been performed for obtaining the local variations of strain and strain rate within the forging. The microstructures of the forged components under the optimal domain conditions revealed dynamically recrystallized grains, and those forged in the flow instability regime have fractured and exhibited flow localization bands and cracks. The experimental load stroke curves correlated well with those obtained by FE simulation.

Forging of cast Mg-3Sn-2Ca-0.4Al-0.4Si magnesium alloy using processing map

Energy Technology Data Exchange (ETDEWEB)

Rao, K. P.; Suresh, K.; Prasad, Y. V. R. K. [University of Hong Kong, Hong Kong (China); Hort, N.; Kainer, K. U. [Magnesium Innovation Centre, Geesthacht (Germany)

2016-06-15

Mg-3Sn-2Ca (TX32) alloy has good creep resistance but limited workability. Minor amounts of Al and Si have been added to TX32 for improving its hot workability. The processing map for the TX32-0.4Al-0.4Si alloy exhibited two workability domains in the temperature and strain rate ranges: (1) 310-415.deg.C/0.0003-0.003 s-1 and (2) 430-500.deg.C/0.003-3 s-1. The alloy exhibited flow instability at temperatures < 350.deg.C at strain rates > 0.01 s-1. The alloy has been forged to produce a cup shape component to validate these findings of processing map. Finite-element (FE) simulation has been performed for obtaining the local variations of strain and strain rate within the forging. The microstructures of the forged components under the optimal domain conditions revealed dynamically recrystallized grains, and those forged in the flow instability regime have fractured and exhibited flow localization bands and cracks. The experimental load stroke curves correlated well with those obtained by FE simulation.

Interfacial characterization of CVI-SiC/SiC composites

International Nuclear Information System (INIS)

Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

2002-01-01

The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

Directory of Open Access Journals (Sweden)

Song Feng

2018-01-01

Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

38 CFR 3.10 - Dependency and indemnity compensation rate for a surviving spouse.

Science.gov (United States)

2010-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2010-07-01 2010-07-01 false Dependency and indemnity... OF VETERANS AFFAIRS ADJUDICATION Pension, Compensation, and Dependency and Indemnity Compensation General § 3.10 Dependency and indemnity compensation rate for a surviving spouse. (a) General...

A CMOS ASIC Design for SiPM Arrays.

Science.gov (United States)

Dey, Samrat; Banks, Lushon; Chen, Shaw-Pin; Xu, Wenbin; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2011-12-01

Our lab has previously reported on novel board-level readout electronics for an 8×8 silicon photomultiplier (SiPM) array featuring row/column summation technique to reduce the hardware requirements for signal processing. We are taking the next step by implementing a monolithic CMOS chip which is based on the row-column architecture. In addition, this paper explores the option of using diagonal summation as well as calibration to compensate for temperature and process variations. Further description of a timing pickoff signal which aligns all of the positioning (spatial channels) pulses in the array is described. The ASIC design is targeted to be scalable with the detector size and flexible to accommodate detectors from different vendors. This paper focuses on circuit implementation issues associated with the design of the ASIC to interface our Phase II MiCES FPGA board with a SiPM array. Moreover, a discussion is provided for strategies to eventually integrate all the analog and mixed-signal electronics with the SiPM, on either a single-silicon substrate or multi-chip module (MCM).

Low dose irradiation performance of SiC interphase SiC/SiC composites

International Nuclear Information System (INIS)

Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

1998-01-01

Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

DEFF Research Database (Denmark)

Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

2014-01-01

Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction

Energy Technology Data Exchange (ETDEWEB)

Li, Yapeng, E-mail: liyp1984@126.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); Li, Yingfeng [School of Electrical Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); Wang, Jianyuan [School of Nature and Applied Science, Northwestern Polytechnical University, Xi' an 710072 (China); He, Zhirong; Zhang, Yonghong; Yu, Qi; Hou, Juncai [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723001 (China)

2017-05-15

Highlights: • The carrier transport deviated from ideal thermionic emission model. • One deep level present at the interface of ZnO/n-Si(111) heterojunction. • The band offsets of ZnO/n-Si(111) heterojunction are a type-II band alignment. - Abstract: The ZnO films were deposited on the surface of n-Si(111) substrate by pulsed laser deposition for fabrication of ZnO/n-Si(111) heterojunction. The carrier transport mechanism, deep level defects and band offsets at the interface of ZnO/n-Si(111) heterojunction were investigated by current- voltage measurement, deep level transient spectroscopy, X-ray photoelectron spectroscopy, respectively. The results showed that the barrier height and ideality factor values varied in the different linear voltage range by using the thermionic emission model, which was due to the deep level participated in carrier transport. Meanwhile, it was found that one deep level appeared at the interface of ZnO/n-Si(111) heterojunction with densities of the deep level about 8.5 × 10{sup 16} cm{sup −3} and activation energies about 224 m eV, which originated from O{sup 2−} vacancies of ZnO films. In addition, the valence band offset of the ZnO/n-Si(111) heterojunction can be calculated to be −2.4 ± 0.15 eV. The conduction band offset is deduced to be −3.5 ± 0.15 eV from the valence band offset value, indicating that the band offsets of ZnO/n-Si(111) heterojunction is a type-II band alignment.

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

Science.gov (United States)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

9 CFR 592.310 - Form of official identification symbol and inspection mark.

Science.gov (United States)

2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Form of official identification symbol... Identifying and Marking Products § 592.310 Form of official identification symbol and inspection mark. (a) The shield set forth in Figure 1, containing the letters “USDA,” shall be the official identification symbol...

Irradiation effect on Nite-SiC/SiC composites

International Nuclear Information System (INIS)

Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

2007-01-01

Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

Cerium intermetallics with TiNiSi-type structure

Energy Technology Data Exchange (ETDEWEB)

Janka, Oliver; Niehaus, Oliver; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Chevalier, Bernard [Bordeaux Univ. CNRS (UPR 9048), Pessac (France). Inst. de Chimie de la Matiere Condensee de Bordeaux (ICMCB)

2016-08-01

Intermetallic compounds with the equiatomic composition CeTX that crystallize with the orthorhombic TiNiSi-type structure can be synthesized with electron-rich transition metals (T) and X = Zn, Al, Ga, Si, Ge, Sn, As, Sb, and Bi. The present review focusses on the crystal chemistry and chemical bonding of these CeTX phases and on their physical properties, {sup 119}Sn and {sup 121}Sb Moessbauer spectra, high-pressure effects, hydrogenation reactions and the formation of solid solutions in order to elucidate structure-property relationships. This paper is the final one of a series of four reviews on equiatomic intermetallic cerium compounds [Part I: Z. Naturforsch. 2015, 70b, 289; Part II: Z. Naturforsch. 2015, 70b, 695; Part III: Z. Naturforsch. 2016, 71b, 165].

Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

Energy Technology Data Exchange (ETDEWEB)

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

2001-07-01

This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

24 CFR 990.310 - Purpose-General policy on financial management, monitoring and reporting.

Science.gov (United States)

2010-04-01

... Management Systems, Monitoring, and Reporting § 990.310 Purpose—General policy on financial management, monitoring and reporting. All PHA financial management systems, reporting, and monitoring of program... 24 Housing and Urban Development 4 2010-04-01 2010-04-01 false Purpose-General policy on financial...

Synthesis of poly(aminopropyl/methyl)silsesquioxane particles as effective Cu(II) and Pb(II) adsorbents.

Science.gov (United States)

Lu, Xin; Yin, Qiangfeng; Xin, Zhong; Li, Yang; Han, Ting

2011-11-30

Poly(aminopropyl/methyl)silsesquioxane (PAMSQ) particles have been synthesized by a one-step hydrolytic co-condensation process using 3-aminopropyltriethoxysilane (APTES) and methyltrimethoxysilane (MTMS) as precursors in the presence of base catalyst in aqueous medium. The amino functionalities of the particles could be controlled by adjusting the organosilanes feed ratio. The compositions of the amino-functionalized polysilsesquioxanes were confirmed by FT-IR spectroscopy, solid-state (29)Si NMR spectroscopy, and elemental analysis. The strong adsorbability of Cu(II) and Pb(II) ions onto PAMSQ particles was systematically examined. The effect of adsorption time, initial metal ions concentration and pH of solutions was studied to optimize the metal ions adsorbability of PAMSQ particles. The kinetic studies indicated that the adsorption process well fits the pseudo-second-order kinetics. Adsorption phenomena appeared to follow Langmuir isotherm. The PAMSQ particles demonstrate the highest Cu(II) and Pb(II) adsorption capacity of 2.29 mmol/g and 1.31 mmol/g at an initial metal ions concentration of 20mM, respectively. The PAMSQ particles demonstrate a promising application in the removal of Cu(II) and Pb(II) ions from aqueous solutions. Copyright © 2011 Elsevier B.V. All rights reserved.

Stability analysis of SiO2/SiC multilayer coatings

International Nuclear Information System (INIS)

Fu Zhiqiang; Jean-Charles, R.

2006-01-01

The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

International Nuclear Information System (INIS)

Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

2000-01-01

The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

Thermochemical behaviour of Ru(II) complex–SiO2 microcomposites

Indian Academy of Sciences (India)

WINTEC

both the gel spectra are to be expected accounting for the complex molar mass of ..... (ii) TEOS + OtEOS-produced gel: No principle diffe- rences in the DTG, DTA ... Acknowledgements. The study was carried out with the financial support from.

High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

Energy Technology Data Exchange (ETDEWEB)

Deng, Xunming [University of Toledo; Fan, Qi Hua

2011-12-31

The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

Long-term aircrew exposure monitoring by means of a Si-diode spectrometer

International Nuclear Information System (INIS)

Spurny, F.; Dacev, C.

2003-01-01

In this contribution we present the results of onboard measurement by means of a Si-diode energy deposition spectrometer, Md-Liulin]. They were accumulated during 2001-2003 years onboard of an A310-300 aircraft of Czech Air lines, during 6 long-term monitoring and about 30 return single flights. Some of results obtained are presented, discussed and analyzed. The semiconductor spectrometer proved the possibility to monitor dosimetric characteristics of radiation fields on aircraft board during about 2 months. It permitted to register onboard a ground level solar event. The results obtained can significantly help to estimate the contribution of solar eruptions to aircrew exposure. Spectrometric properties of it permit to enlarge the interpretation of directly registered data. An additional effort is needed to improve this performance. Further calibration in the CERF fields is needed, important would be to acquire further onboard data in cases when the contribution of the ionizing/neutron part of the field changes. (authors)

Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

International Nuclear Information System (INIS)

Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

2007-01-01

Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

Mednarodni standardi - veličine in enote (ISO 31-0 do 31-13): International standards - quantities and units (ISO 31-0 to 31-13):

OpenAIRE

Glavič, Peter

2002-01-01

In this paper the international standards ISO 31 (Quantities and units) are presented with the following parts: ISO 31-0 (General principles), ISO 31-1 (Space and time), ISO 31-2 (Periodic and related phenomena), ISO 31-3 (Mechanics), ISO 31-4 (Heat), ISO 31-5 (Electricity and magnetism), ISO 31-8 (Physical chemistry and molecular physics), ISO 31-12 (Characteristic numbers)and others. The emphasis is given on the basic principles, which is important for writing of reports, presentations, art...

Aspects regarding the aided programming of the electroerosion machine ROBOFIL 310

OpenAIRE

Ioan Mocian; Răzvan Cazacu

2011-01-01

This paper presents the solutions to some practical issues regarding the design of technologies with the wire electroerosion numerical command machine ROBOFIL 310, produced by the Swiss manufacturer Charmilles. As part of the study an AutoCAD application was designed using Visual Basic and the .NET platform, aimed at helping the designer identify the minimum radius of a contour before sending it to the machine

Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

2014-02-28

We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

Thermal shock properties of 2D-SiCf/SiC composites

International Nuclear Information System (INIS)

Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

2012-01-01

This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

SiC/SiC Cladding Materials Properties Handbook

Energy Technology Data Exchange (ETDEWEB)

Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-08-01

When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

Site Environmental Report for 1998 Volume II

International Nuclear Information System (INIS)

Ruggieri, Michael

1999-01-01

Volume II of the Site Environment Report for 1998 is provided by Ernest Orlando Lawrence Berkeley National Laboratory as a supplemental appendix to the report printed in volume I. Volume II contains the environmental monitoring and sampling data used to generate summary results in the main report for routine and non routine activities at the Laboratory (except for groundwater sampling data, which may be found in the reports referred to in chapter 6). Data presented in the tables are given in International System of Units (SI) units of measure

Nonviral pulmonary delivery of siRNA.

Science.gov (United States)

Merkel, Olivia M; Kissel, Thomas

2012-07-17

RNA interference (RNAi) is an important part of the cell's defenses against viruses and other foreign genes. Moreover, the biotechnological exploitation of RNAi offers therapeutic potential for a range of diseases for which drugs are currently unavailable. Unfortunately, the small interfering RNAs (siRNAs) that are central to RNAi in the cytoplasm are readily degradable by ubiquitous nucleases, are inefficiently targeted to desired organs and cell types, and are excreted quickly upon systemic injection. As a result, local administration techniques have been favored over the past few years, resulting in great success in the treatment of viral infections and other respiratory disorders. Because there are several advantages of pulmonary delivery over systemic administration, two of the four siRNA drugs currently in phase II clinical trials are delivered intranasally or by inhalation. The air-blood barrier, however, has only limited permeability toward large, hydrophilic biopharmaceuticals such as nucleic acids; in addition, the lung imposes intrinsic hurdles to efficient siRNA delivery. Thus, appropriate formulations and delivery devices are very much needed. Although many different formulations have been optimized for in vitro siRNA delivery to lung cells, only a few have been reported successful in vivo. In this Account, we discuss both obstacles to pulmonary siRNA delivery and the success stories that have been achieved thus far. The optimal pulmonary delivery vehicle should be neither cytotoxic nor immunogenic, should protect the payload from degradation by nucleases during the delivery process, and should mediate the intracellular uptake of siRNA. Further requirements include the improvement of the pharmacokinetics and lung distribution profiles of siRNA, the extension of lung retention times (through reduced recognition by macrophages), and the incorporation of reversible or stimuli-responsive binding of siRNA to allow for efficient release of the siRNAs at the

U3Si2 behavior in H2O environments: Part II, pressurized water with controlled redox chemistry

Science.gov (United States)

Nelson, A. T.; Migdisov, A.; Wood, E. Sooby; Grote, C. J.

2018-03-01

Recent interest in U3Si2 as an advanced light water reactor fuel has driven assessment of numerous properties, but characterization of its response to H2O environments is sparse in available literature. The behavior of U3Si2 in H2O containing atmospheres is investigated and presented in a two-part series of articles. This work examines the behavior of U3Si2 following exposure to pressurized H2O at temperatures from 300 to 350 °C. Testing was performed using two autoclave configurations and multiple redox conditions. Use of solid state buffers to attain a controlled water chemistry is also presented as a means to test actinide-bearing systems. Buffers were used to vary the hydrogen concentration between 1 and 30 parts per million H2. Testing included UN, U3Si5, and UO2. Both UN and U3Si5 were found to rapidly pulverize in less than 50 h at 300 °C. Uranium dioxide was included as a control for the autoclave system, and was found to be minimally impacted by exposure to pressurized water at the conditions tested for extended time periods. Testing of U3Si2 at 300 °C found reasonable stability through 30 days in 1-5 ppm H2. However, pulverization was observed following 35 days. The redox condition of testing strongly affected pulverization. Characterization of the resulting microstructures suggests that the mechanism responsible for pulverization under more strongly reducing conditions differs from that previously identified. Hydride formation is hypothesized to drive this transition. Testing performed at 350 °C resulted in rapid pulverization of U3Si2 in under 50 h.

High adsorptive γ-AlOOH(boehmite)@SiO2/Fe3O4 porous magnetic microspheres for detection of toxic metal ions in drinking water.

Science.gov (United States)

Wei, Yan; Yang, Ran; Zhang, Yong-Xing; Wang, Lun; Liu, Jin-Huai; Huang, Xing-Jiu

2011-10-21

γ-AlOOH(boehmite)@SiO(2)/Fe(3)O(4) porous magnetic microspheres with high adsorption capacity toward heavy metal ions were found to be useful for the simultaneous and selective electrochemical detection of five metal ions, such as ultratrace zinc(II), cadmium(II), lead(II), copper(II), and mercury(II), in drinking water.

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Science.gov (United States)

Zaumseil, Peter; Kozlowski, Grzegorz; Yamamoto, Yuji; Schubert, Markus Andreas; Schroeder, Thomas

2013-08-01

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III-V and II-VI materials.

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

Science.gov (United States)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

32 CFR 37.310 - When would I use an expenditure-based TIA?

Science.gov (United States)

2010-07-01

... 32 National Defense 1 2010-07-01 2010-07-01 false When would I use an expenditure-based TIA? 37... Technology Investment Agreements § 37.310 When would I use an expenditure-based TIA? In general, you must use an expenditure-based TIA under conditions other than those described in § 37.305. Reasons for any...

Fluorescence imaging as a diagnostic of M-band x-ray drive condition in hohlraum with fluorescent Si targets

International Nuclear Information System (INIS)

Li, Qi; Hu, Zhimin; Yao, Li; Huang, Chengwu; Yuan, Zheng; Zhao, Yang; Xiong, Gang; Qing, Bo; Lv, Min; Zhu, Tuo; Deng, Bo; Li, Jin; Wei, Minxi; Zhan, Xiayu; Li, Jun; Yang, Yimeng; Su, Chunxiao; Yang, Guohong; Zhang, Jiyan; Li, Sanwei

2017-01-01

Fluorescence imaging of surrogate Si-doped CH targets has been used to provide a measurement for drive condition of high-energy x-ray (i.e. M-band x-ray) drive symmetry upon the capsule in hohlraum on Shenguang-II laser facility. A series of experiments dedicated to the study of photo-pumping and fluorescence effect in Si-plasma are presented. To investigate the feasibility of fluorescence imaging in Si-plasma, an silicon plasma in Si-foil target is pre-formed at ground state by the soft x-ray from a half-hohlraum, which is then photo-pumped by the K-shell lines from a spatially distinct laser-produced Si-plasma. The resonant Si photon pump is used to improve the fluorescence signal and cause visible image in the Si-foil. Preliminary fluorescence imaging of Si-ball target is performed in both Si-doped and pure Au hohlraum. The usual capsule at the center of the hohlraum is replaced with a solid Si-doped CH-ball (Si-ball). Since the fluorescence is proportional to the photon pump upon the Si-plasma, high-energy x-ray drive symmetry is equal to the fluorescence distribution of the Si-ball. (paper)

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

Science.gov (United States)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-01

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Eight joint BER II and BESSY II users meeting. Abstracts

Energy Technology Data Exchange (ETDEWEB)

NONE

2016-07-01

The following topics were dealt with: Accelerator operation and projecs, photon science and instrumentation at BESSY II, status of energy materials in-situ Lab at BESSY II, high resolution spectrometer PEAXIS at BESSY II, sample environment at BESSY II, molecular control mechanisms in the Brr2 RNA helicase for efficient and regulated splicing, the Li conversion reaction of 4CoFe{sub 2}O{sub 4} nanoparticles, buried interfaces in lithium ion batteries probed with HAXPES, ARPES studies of the STO(001) 2DEG, all-in/all-out magnetic order in rare earth iridates, oxygen reduction reaction on graphene in Li-air batteries, electronic order in high-T{sub c} superconductors, in-siu observation of novel switching phenomena in highly porous metal-organic frameworks, photoinduced demagnetization and insulator-to-metal transition in ferromagnetic insulating BaFeO{sub 3} thin films, ARPES measurement of the ferroelectric bulk Rashba system GeTe, bisphenol A on Cu(111) and Ag(111), reverse water-gas shift or Sabathier methanation on N(110), structural studies of molecular machines, multi-MHz time-of-flight electronic band-structure imaging of graphene on Ir(111), diffusion pathways in ion conductors, ground-state potential energy surfaces around selected atoms from resonant inelastic X-ray scattering, solar energy in an emerging country, in-situ neutron analysis of electrode materials for electrochemical energy storage, structure and transport properties in thermoelectric skutterudites, investigation of the interphase formation on solid lithium-ion conductors by neutron reflectometry, load partitin and damage characterization of cast AlSi{sub 12}CuMgNi alloy with ceramic reinforcement, methane adsorption in highly porous metal-organics, structure and magnetic interactions in dimer system Ba{sub (3-x)}Sr{sub x}Cr{sub 2}O{sub 8}, distribution of S in C-S nanocomposites, current status of HFM-EXED FACITIY; SPIN NEAMTICITY IN s=1/2 frustrated zigzag chaIN β-TeVO{sub 4}, electronic

Treating respiratory viral diseases with chemically modified, second generation intranasal siRNAs.

Science.gov (United States)

Barik, Sailen

2009-01-01

Chemically synthesized short interfering RNA (siRNA) of pre-determined sequence has ushered a new era in the application of RNA interference (RNAi) against viral genes. We have paid particular attention to respiratory viruses that wreak heavy morbidity and mortality worldwide. The clinically significant ones include respiratory syncytial virus (RSV), parainfluenza virus (PIV) and influenza virus. As the infection by these viruses is clinically restricted to the respiratory tissues, mainly the lungs, the logical route for the application of the siRNA was also the same, i.e., via the nasal route. Following the initial success of intranasal siRNA against RSV, second-generation siRNAs were made against the viral polymerase large subunit (L) that were chemically modified and screened for improved stability, activity and pharmacokinetics. 2'-O-methyl (2'-O-Me) and 2'-deoxy-2'-fluoro (2'-F) substitutions in the ribose ring were incorporated in different positions of the sense and antisense strands and the resultant siRNAs were tested with various transfection reagents intranasally against RSV. Based on these results, we propose the following consensus for designing intranasal antiviral siRNAs: (i) modified 19-27 nt long double-stranded siRNAs are functional in the lung, (ii) excessive 2'-OMe and 2'-F modifications in either or both strands of these siRNAs reduce efficacy, and (iii) limited modifications in the sense strand are beneficial, although their precise efficacy may be position-dependent.

DIN VIAŢĂ SI DIN CĂRŢI O LUCRARE CE NE PUNE PE GÂNDURI

Directory of Open Access Journals (Sweden)

Coriolan PĂUNESCU

2008-06-01

Full Text Available A apărut, la Iasi, o carte cu valoare de unicat; este vorba de „Agriculturaîn proverbe si cugetări” (Ed. Vasiliana ’98, Iasi, 2008, semnată de reputatul Prof.univ. dr. Nicolae VASILESCU si ing. Aglaia VASILESCU, oameni care au slujitdecenii de-a rândul învăţământul agronomic românesc. De aici, desigur si respectulautorilor pentru agricultură si, mai ales, pentru oamenii satului, dedicaţi, înîntregime, acestei nobile îndeletniciri (dar si creaţiei lor spirituale, în care, nu o dată,se reflectă munca si viaţa de fiecare zi. Însă, această carte se vrea mai mult decâtspune, deoarece cuprinde si reflecţii ale oamenilor culţi, despre agricultură, întrecare scriitori, filosofi, muzicieni, savanţi ai domeniului agronomic, călătoriînvederaţi, politicieni, istorici, oameni ai catedrelor, revoluţionari de renume,evident, din lume si din ţară, din Antichitate si până astăzi.

Aspects regarding the aided programming of the electroerosion machine ROBOFIL 310

Directory of Open Access Journals (Sweden)

Ioan Mocian

2011-12-01

Full Text Available This paper presents the solutions to some practical issues regarding the design of technologies with the wire electroerosion numerical command machine ROBOFIL 310, produced by the Swiss manufacturer Charmilles. As part of the study an AutoCAD application was designed using Visual Basic and the .NET platform, aimed at helping the designer identify the minimum radius of a contour before sending it to the machine

Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

International Nuclear Information System (INIS)

Sadeghzadeh, M.A.

1998-12-01

This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Energy Technology Data Exchange (ETDEWEB)

Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

2015-11-09

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

Abrupt GaP/Si hetero-interface using bistepped Si buffer

International Nuclear Information System (INIS)

Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

2015-01-01

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

Energy Technology Data Exchange (ETDEWEB)

Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

2016-08-15

Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

Science.gov (United States)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-25

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

International Nuclear Information System (INIS)

Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

2004-01-01

Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

Science.gov (United States)

Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

2016-03-01

Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

International Nuclear Information System (INIS)

Gueneau, C.; Ansara, I.

1994-01-01

The substitutions of Al Si, Fe Mn and Fe Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil's model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs

Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

Electro-codeposition of Ni-SiO2 nanocomposite coatings from deep eutectic solvent with improved corrosion resistance

Science.gov (United States)

Li, Ruiqian; Hou, Yuanyuan; Liang, Jun

2016-03-01

Electro-codeposition of nano-sized SiO2 particles into the metal matrix in aqueous solution is generally difficult. In this paper, the nano-sized SiO2 particles were successfully codeposited in the Ni matrix from a choline chloride (ChCl)/ethylene glycol (EG) based deep eutectic solvent (DES) by pulse electro-codeposition. The effects of nano-sized SiO2 particles on electrochemical behaviour of Ni(II) were investigated. The microstructure, composition and corrosion resistance of pure Ni and Ni-SiO2 nanocomposite coatings were explored. Results showed that the SiO2 nanoparticles exhibited excellent dispersion stability in ChCl:2EG DES without any stabilizing additives and the presence of SiO2 nanoparticles have significant effects on the nucleation mechanism of Ni. The maximum content of SiO2 nanoparticles in composite coatings can achieve 4.69 wt.%, which closes to the level of co-deposition micro-sized SiO2 particles from aqueous solution. The Ni-SiO2 nanocomposite coatings exhibit much better corrosion resistance than pure Ni coating, and the corrosion resistance performance increases with increasing SiO2 content in the composite coatings.

Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

International Nuclear Information System (INIS)

Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

2004-01-01

(Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

Science.gov (United States)

Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

2004-03-01

(Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

Irradiation tests of U3Si2-Al fuels up to very high fission densities

International Nuclear Information System (INIS)

Nuding, M.; Boening, K.

2001-01-01

The new research reactor of the Munich Technical University (TUM), the FRM-II, will have U 3 Si 2 -Al as the fuel. This fuel is considered qualified and optimally usable in the light of findings obtained in the RERTR program (Reduced Enrichment for Research and Test Reactors). The RERTR program was conducted to develop new fuel for the use of low enriched uranium (LEU) in research reactors. As the unique properties of the FRM-II in research and application are based also on achieving a very compact reactor core with highly enriched uranium (HEU), additional irradiation tests were performed on the basis of the RERTR program. They were run in close cooperation with the French Commissariat a l'Energie Atomique (CEA) in its SILOE and OSIRIS facilities, among others. After extensive evaluation, also of other studies, these tests confirm the RERTR findings about fuel swelling behavior and, consequently, the suitability of U 3 Si 2 -Al (HEU) for use in the compact core of the FRM-II. (orig.) [de

Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

International Nuclear Information System (INIS)

Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

2013-01-01

Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

Oscillations in the fusion of the Si + Si systems

International Nuclear Information System (INIS)

Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

1986-02-01

Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

Aplicaciones del SiC biomórfico como reforzante estructural en hormigones refractarios

Directory of Open Access Journals (Sweden)

Sepúlveda, R.

2005-10-01

Full Text Available This work is devoted to the study of the time and temperature dependence of the static grain growth in YTZP 4 mol %, with an average grain size within the submicrometric range (> 0.1 μm. Also, the mechanical response in the temperature interval between 1200 ºC and 1500 ºC is analysed. The grain growth is controlled by the yttria segregation at the grain boundaries, which plays a key role in the cationic diffusion processes. Microstructural characterization of both as-received and deformed samples allows to conclude that plastic deformation is due to grain boundary sliding (GBS, with stress exponents increasing with the flow stress, but in all cases they are lower than n = 2.

Una posible aplicación del SiC biomórfico (bioSiC son los reforzante estructural en hormigones refractarios. En este caso se han fabricado piezas de bioSiC con forma de cilindros alargados, 3-4 mm de diámetro y 30-35 mm de longitud, mediante infiltración reactiva de Si líquido en piezas de carbón obtenidas por pirolización de madera de haya de calidad comercial. Hemos estudiado las características microestructurales y las propiedades mecánicas de los reforzantes, como paso previo al estudio de la aplicación mencionada, de la que se ofrece un avance en este trabajo. Para caracterizar la calidad del material y del proceso de fabricación, la microestructura de las piezas se ha estudiado mediante microscopía electrónica de barrido. Los reforzantes de bioSiC fueron ensayados a compresión uniaxial y flexión en cuatro puntos a temperatura ambiente y a alta temperatura (1250-1400ºC para la determinación de sus propiedades mecánicas, y se realizaron estudios fractográficos en el segundo tipo de ensayos. Subsecuentemente, se prepararon ladrillos refractarios con un 3% en peso de reforzantes de bioSiC, que fueron curados a diferentes temperaturas (máx. 1600ºC. Estos ladrillos se han ensayado en compresión y flexión en tres puntos, a temperatura ambiente

Structure of MnSi on SiC(0001)

Science.gov (United States)

Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

2016-11-01

We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

Giovanni Paolo II – l’uomo buono

Directory of Open Access Journals (Sweden)

Stanisław Wronka

2005-06-01

Full Text Available L’andare di Giovanni Paolo II alla casa del Padre ha toccato profondamente tutti, credenti e non credenti. Il modo in cui il Papa viveva i suoi ultimi giorni, segnati dalla sofferenza, la sua pasqua dalla morte alla vita in Dio, ha confermato definitivamente la sua grandezza. Agli occhi del mondo è sfavillata la sua bella umanità e allo stesso tempo si è aperto unenorme e doloroso vuoto. La vicenda dell’uomo rassomiglia a quella di un albero: si può valutarne bene la grandezza, salute e posto nel paesaggio solo quando è abbattuto. L’umanità del Santo Padre era tutta tessuta dei valori massimi di verità, libertà, amore... Il Papa li realizzava con radicalismo e coraggio che però sapeva unire alla mitezza e rispetto verso gli altri. Questa difficile sintesi testimonia il suo genio morale. Il fondamento dell’umanità di Giovanni Paolo II era la fede in Dio che rafforza le naturali capacità dell’uomo e permette di unire tutti gli elementi della realtà umana, inclusa la sofferenza e morte, in un armonioso insieme. Il legame con Dio non lo separava dagli uomini, ma lo apriva ancor di più a loro. Infatti, accanto a lui si radunavano sia giovani che adulti ed egli li univa sulla base dei valori che riconosceva. Col passare del tempo, la comunità attorno a lui aumentava, nel giorno del suo funerale abbracciava pressoché tutto il mondo. Ciò dimostra la giustezza dell’antropologia evangelica alla cui luce costruiva tutta la sua vita. I mezzi con cui il Santo Padre foggiava la sua umanità erano semplici, ma esigenti. La fonte della forza e della luce costituiva per lui soprattutto una fervida e costante preghiera, frequente partecipazione ai sacramenti e sistematica meditazione sulla Parola di Dio. A queste pratiche religiose univa un solido studio delle diverse materie: letteratura, filosofia, teologia. Con passione perseguiva la verità, voleva raggiungere l’essenza delle cose e fenomeni, trattava le questioni del

An RNA polymerase II-and AGO4-associated protein acts in RNA-directed DNA methylation

KAUST Repository

Gao, Zhihuan

2010-04-21

DNA methylation is an important epigenetic mark in many eukaryotes. In plants, 24-nucleotide small interfering RNAs (siRNAs) bound to the effector protein, Argonaute 4 (AGO4), can direct de novo DNA methylation by the methyltransferase DRM2 (refs 2, 4-6). Here we report a new regulator of RNA-directed DNA methylation (RdDM) in Arabidopsis: RDM1. Loss-of-function mutations in the RDM1 gene impair the accumulation of 24-nucleotide siRNAs, reduce DNA methylation, and release transcriptional gene silencing at RdDM target loci. RDM1 encodes a small protein that seems to bind single-stranded methyl DNA, and associates and co-localizes with RNA polymerase II (Pol II, also known as NRPB), AGO4 and DRM2 in the nucleus. Our results indicate that RDM1 is a component of the RdDM effector complex and may have a role in linking siRNA production with pre-existing or de novo cytosine methylation. Our results also indicate that, although RDM1 and Pol V (also known as NRPE) may function together at some RdDM target sites in the peri-nucleolar siRNA processing centre, Pol II rather than Pol V is associated with the RdDM effector complex at target sites in the nucleoplasm. © 2010 Macmillan Publishers Limited. All rights reserved.

Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

Science.gov (United States)

Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

2006-01-01

We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

International Nuclear Information System (INIS)

Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

2006-01-01

We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

Diffusion coefficients of nickel chloride in aqueous solutions of lactose at T = 298.15 K and T = 310.15 K

International Nuclear Information System (INIS)

Ribeiro, Ana C.F.; Gomes, Joselaine C.S.; Barros, Marisa C.F.; Lobo, Victor M.M.; Esteso, Miguel A.

2011-01-01

Binary mutual diffusion coefficients (interdiffusion coefficients) of nickel chloride in water at T = 298.15 K and T = 310.15 K, and at concentrations between (0.000 and 0.100) mol · dm -3 , using a Taylor dispersion method have been measured. These data are discussed on the basis of the Onsager-Fuoss and Pikal models. The equivalent conductance at infinitesimal concentration of the nickel ion in these solutions at T = 310.15 K has been estimated using these results. Through the same technique, ternary mutual diffusion coefficients (D 11 , D 22 , D 12 , and D 21 ) for aqueous solutions containing NiCl 2 and lactose, at T = 298.15 K and T = 310.15 K, and at different carrier concentrations were also measured. These data permit us to have a better understanding of the structure of these systems and the thermodynamic behaviour of NiCl 2 in different media.

TEM characterization of invariant line interfaces and structural ledges in a Mo-Si alloy

International Nuclear Information System (INIS)

Xiao, S.Q.; Dahmen, U.; Maloy, S.A.; Heuer, A.H.

1995-06-01

Two distinct lath morphologies of Mo 5 Si 3 precipitates observed in MoSi 2 differ in their cross-sectional shape and lattice orientation. Type I laths exhibit a rectangular cross section, with interfaces parallel to low-index planes, while Type II laths are parallelogram-shaped, with their major interface at 13 degree to the Type I precipitate. The corresponding orientation relationships differ by a 1.8 degree rotation around the lath axis. In this study, the difference between the two characteristic morphologies and orientation relationships is shown to be the formation of an invariant line strain for Type II precipitates. On an atomic scale, both interfaces have a terrace and ledge structure but differ in the stacking sequence of interfacial ledges associated with partial dislocations. The structural unit model and the invariant line model predict identical interface geometries which agree closely with the observations

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

Synthesis and characterization of laminated Si/SiC composites

Science.gov (United States)

Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

2012-01-01

Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

Synthesis and characterization of laminated Si/SiC composites

Directory of Open Access Journals (Sweden)

Salma M. Naga

2013-01-01

Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

Propagation of misfit dislocations from buffer/Si interface into Si

Science.gov (United States)

Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

2011-08-30

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Tailoring of SiC nanoprecipitates formed in Si

Energy Technology Data Exchange (ETDEWEB)

Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2013-07-15

The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

Science.gov (United States)

Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

2018-06-01

Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

International Nuclear Information System (INIS)

Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

2003-01-01

Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

High thermal conductivity SiC/SiC composites for fusion applications -- 2

International Nuclear Information System (INIS)

Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

1998-01-01

This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

Steady-state analytical model of suspended p-type 3C-SiC bridges under consideration of Joule heating

Science.gov (United States)

Balakrishnan, Vivekananthan; Dinh, Toan; Phan, Hoang-Phuong; Kozeki, Takahiro; Namazu, Takahiro; Viet Dao, Dzung; Nguyen, Nam-Trung

2017-07-01

This paper reports an analytical model and its validation for a released microscale heater made of 3C-SiC thin films. A model for the equivalent electrical and thermal parameters was developed for the two-layer multi-segment heat and electric conduction. The model is based on a 1D energy equation, which considers the temperature-dependent resistivity and allows for the prediction of voltage-current and power-current characteristics of the microheater. The steady-state analytical model was validated by experimental characterization. The results, in particular the nonlinearity caused by temperature dependency, are in good agreement. The low power consumption of the order of 0.18 mW at approximately 310 K indicates the potential use of the structure as thermal sensors in portable applications.

7 CFR 3017.310 - What must I do if a Federal agency excludes a person with whom I am already doing business in a...

Science.gov (United States)

2010-01-01

... with whom I am already doing business in a covered transaction? 3017.310 Section 3017.310 Agriculture... already doing business in a covered transaction? (a) You as a participant may continue covered transactions with an excluded person if the transactions were in existence when the agency excluded the person...

Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

International Nuclear Information System (INIS)

Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

2003-01-01

Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

Nonmuscle Myosin II Is Required for Internalization of the Epidermal Growth Factor Receptor and Modulation of Downstream Signaling*

Science.gov (United States)

Kim, Jong Hyun; Wang, Aibing; Conti, Mary Anne; Adelstein, Robert S.

2012-01-01

Ligand-induced internalization of the epidermal growth factor receptor (EGFR) is an important process for regulating signal transduction, cellular dynamics, and cell-cell communication. Here, we demonstrate that nonmuscle myosin II (NM II) is required for the internalization of the EGFR and to trigger the EGFR-dependent activation of ERK and AKT. The EGFR was identified as a protein that interacts with NM II by co-immunoprecipitation and mass spectrometry analysis. This interaction requires both the regulatory light chain 20 (RLC20) of NM II and the kinase domain of the EGFR. Two paralogs of NM II, NM II-A, and NM II-B can act to internalize the EGFR, depending on the cell type and paralog content of the cell line. Loss (siRNA) or inhibition (25 μm blebbistatin) of NM II attenuates the internalization of the EGFR and impairs EGFR-dependent activation of ERK and AKT. Both internalization of the EGFR and downstream signaling to ERK and AKT can be partially restored in siRNA-treated cells by introduction of wild type (WT) GFP-NM II, but cannot be restored by motor mutant NM II. Taken together, these results suggest that NM II plays a role in the internalization of the EGFR and EGFR-mediated signaling pathways. PMID:22718763

Expression of EMAP-II in the rat dental follicle and its potential role in tooth eruption

Science.gov (United States)

Liu, Dawen; Wise, Gary E.

2008-01-01

Endothelial monocyte-activating polypeptide II (EMAP-II) is an inflammatory cytokine with chemotactic activity. Because the dental follicle (DF) recruits mononuclear cells (osteoclast precursors) to promote the osteoclastogenesis needed for tooth eruption, it was the aim of this study to determine if EMAP-II may contribute to this recruitment. Using a DNA microarray, EMAP-II was found to be highly expressed in vivo in the DFs of day 1 to day 11 postnatal rats, with its expression elevated at days 1 and 3. Using a siRNA to knock down EMAP-II expression also resulted in a reduction in expression of CSF-1 and MCP-1 in the DF cells. Addition of EMAP-II protein to the DF cells partially restored the expression of CSF-1 and MCP-1. In chemotaxis assays using either conditioned medium of the DF cells with anti-EMAP-II antibody added or conditioned medium of DF cells with EMAP-II knocked down by siRNA, migration indexes of bone marrow mononuclear cells were significantly reduced. These results suggest that EMAP-II is another chemotactic molecule in the dental follicle involved in recruitment of mononuclear cells, and that EMAP-II may exert its chemotactic function directly by recruiting mononuclear cells and indirectly by enhancing the expression of other chemotactic molecules (CSF-1 and MCP-1). PMID:18705801

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

CERN Document Server

Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

2002-01-01

Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

Comparison of Mg-based multilayers for solar He II radiation at 30.4 nm wavelength

Energy Technology Data Exchange (ETDEWEB)

Zhu Jingtao; Zhou Sika; Li Haochuan; Huang Qiushi; Wang Zhanshan; Le Guen, Karine; Hu, Min-Hui; Andre, Jean-Michel; Jonnard, Philippe

2010-07-10

Mg-based multilayers, including SiC/Mg, Co/Mg, B4C/Mg, and Si/Mg, are investigated for solar imaging and a He II calibration lamp at a 30.4 nm wavelength. These multilayers were fabricated by a magnetron sputtering method and characterized by x-ray reflection. The reflectivities of these multilayers were measured by synchrotron radiation. Near-normal-incidence reflectivities of Co/Mg and SiC/Mg multilayer mirrors are as high as 40.3% and 44.6%, respectively, while those of B4C/Mg and Si/Mg mirrors are too low for application. The measured results suggest that SiC/Mg, Co/Mg multilayers are promising for a 30.4 nm wavelength.

Innovative SiC/SiC composite for nuclear applications

International Nuclear Information System (INIS)

Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

2013-01-01

Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

Gas leak tightness of SiC/SiC composites at elevated temperature