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Sample records for cd sn te

  1. Phase diagram of SnTe-CdSe cross-section of SnTe+CdSe reversible SnSe+CdTe ternary reciprocal system

    International Nuclear Information System (INIS)

    Dubrovin, I.V.; Budennaya, L.D.; Mizetskaya, I.B.; Sharkina, Eh.V.

    1986-01-01

    Phase equilibrium diagram of SnTe-CdSe cross-section of Sn, Cd long Te, Se ternary reciprocal system is investigated using the methods of differential thermal, X-ray phase, and microstructural analyses. Maximum length of solid solutions on the base of SnTe corresponds to approximately 14 mol.% at 1050 K and approximately 3 mol.% of CdSe at 670 K. Region of solid solutions on the base of CdSe corresponds to less than 1 mol.% of SnTe at room temperature. SnTe-CdSe cross-section is not a quasibinar one. Equilibrium is shifted to the left in the SnTe+CdSe reversible SnSe+CdTe reciprocal system

  2. Theoretical and experimental study of α-Sn deposited on CdTe(001)

    International Nuclear Information System (INIS)

    Gomez, J.A.; Guenzburger, D.; Ellis, D.E.; Hu, M.Y.; Baggio-Saitovitc, E.M.; Passamani, E.C.; Alp, E.E.

    2003-01-01

    Gray tin films enriched by over 95% 119 Sn and grown by molecular beam epitaxy on CdTe(001) wafers are characterized by inelastic nuclear resonance spectroscopy and investigated theoretically by embedded-cluster density-functional theory methods. Experimental tin phonon densities of states are obtained via analysis of resonant scattering of the 23.88-keV nuclear transition, making use of a high-resolution spectrometer at the Advanced Photon Source. Conventional Moessbauer spectroscopy is used in the scattering mode to determine hyperfine parameters of the α-Sn phase and, after thermal treatment, the β phase. Electronic structure in the vicinity of Sn-Cd and Sn-Te interfaces is calculated in order to determine local charge transfer and changes in hyperfine parameters for 119 Sn atoms in the interface region. Although, due to sample thickness, both experiments reveal properties essentially of the bulk, the calculations allow investigation of surface and interface regions at an atomic level, thus providing complementary information. Effects of interlayer relaxation are explored.

  3. Non-stoichiometry and properties of SnTe left angle Cd right angle semiconducting phase of variable composition

    International Nuclear Information System (INIS)

    Rogacheva, E.I.; Nashchekina, O.N.

    2006-01-01

    It was established that the dependences of microhardness, hole concentration, electrical conductivity, and the Seebeck coefficient on composition in the Sn 0.984 Te-Cd and Sn 0.984 Te-CdTe solid solutions based on non-stoichiometric tin telluride exhibit non-monotonic behavior. The effects connected with the interaction between intrinsic and impurity defects and with critical phenomena accompanying a transition to the impurity continuum were isolated. The results obtained in this work represent another evidence for our proposition about the universal character of critical phenomena accompanying the transition from an impurity discontinuum to an impurity continuum in solid solutions. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  4. Cd-diffused Pb/sub 1-x/Sn/sub x/Te lasers with high output

    International Nuclear Information System (INIS)

    Lo, W.

    1976-01-01

    Cd-diffused Pb 1 /sub -//subx/Sn/subx/Te (xapprox.0.13) diode lasers have been fabricated with cw output powers of 1.25 mW (single mode) and 2.4 mW (total) at 10.6 μm. These power levels are attributed to the low-temperature Cd diffusion, a new method of growing low-dislocation-density crystals, and to a contact resistance as low as 3x10 -5 Ω cm 2 . Multimode emission spectra are common for cw operation, but reducing the cavity width encourages single-mode emission, indicating the filamentary nature of modes in these devices

  5. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  6. Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires

    Science.gov (United States)

    Ghimpu, L.; Ursaki, V. V.; Pantazi, A.; Mesterca, R.; Brâncoveanu, O.; Shree, Sindu; Adelung, R.; Tiginyanu, I. M.; Enachescu, M.

    2018-04-01

    We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized by a flame-based thermal oxidation method. The produced structures were characterized by scanning electron microscopy (SEM), high-resolution scanning transmission electron microscope (HR-STEM), X-ray diffraction (XRD), Raman scattering and FTIR spectroscopy. It was found that the SnO2 core is of the rutile type, while the shells are composed of CdTe or GaAs nanocrystallites of zincblende structure with the dimensions of crystallites in the range of 10-20 nm. The Raman scattering investigations demonstrated that the quality of the porous nanostructured shell is improved by annealing at temperatures of 420-450 °C. The prospects of implementing these microstructures in intrinsic type fiber optic sensors are discussed.

  7. Optoelectronic properties of R-F magnetron sputtered Cadmium Tin Oxide (Cd2SnO4) thin films for CdS/CdTe thin film solar cell applications

    International Nuclear Information System (INIS)

    Jeyadheepan, K.; Thamilselvan, M.; Kim, Kyunghae; Yi, Junsin; Sanjeeviraja, C.

    2015-01-01

    Highlights: • Characterization of “as-prepared” Cd 2 SnO 4 thin films ideal for thin film solar cells. • Lowest value of resistivity with high mobility attained for the as-prepared Cd 2 SnO 4 films. • Maximum transmittance of 93% in the visible range for the as-prepared films. • Effect of substrate temperature on the scattering mechanism of TCO. - Abstract: The influence of substrate temperature on the microstructural behavior, optical, electrical properties and on the scattering mechanism of charge carriers were studied for the as-prepared radio-frequency (R-F) magnetron sputtered Cadmium Tin Oxide (Cd 2 SnO 4 ) thin films. Films prepared at the substrate temperature of 300 °C were found to be polycrystalline in nature with preferential orientation along (3 1 1) plane. Well pronounced Moss–Burstein shift, in the transmittance spectra with dispersions in the optical band gap from 3.07 to 3.30 eV, was observed at substrate temperatures between 25 and 300 °C. Optical property of high visible transmittance was retained by the films. Analysis of the electrical properties on the prepared crystalline Cd 2 SnO 4 films showed a calculated resistivity of 10 −3 –10 −4 Ω cm, with n-type carrier density in the range of 10 19 –10 20 cm −3 and the charge carrier mobility in the range of 63–30 cm 2 /V s. The effects of structural, compositional and optical properties on the scattering mechanism of charge carrier are elaborated and reported to be an experimental evidence for the theoretical predictions. The results revealed the essential DC electrical conduction behavior, which is ideal for the fabrication of Cd 2 SnO 4 -based CdS/CdTe thin film solar cells

  8. Measurement of cross sections producing short-lived nuclei by 14MeV neutron. Cd, Sn, Te, Nd, Gd, Re

    Energy Technology Data Exchange (ETDEWEB)

    Sakane, H.; Yamamoto, H.; Kawade, K. [Nagoya Univ. (Japan); Iida, T.; Takahashi, A.

    1998-03-01

    Nine neutron activation cross sections producing the nuclei with half-lives between 25sec and 22min were measured at energy range between 13.4 and 14.9 MeV by activation method. The (n,p) and (n,{alpha}) reaction cross sections were measured for the isotopes of {sup 110}Cd, {sup 112}Sn, {sup 122}Te, {sup 130}Te and {sup 185}Re and those of {sup 130}Te, {sup 148}Nd and {sup 158}Gd, respectively. The present results were compared with our systematics proposed on the basis of 58 cross section data of (n,p) and 33 data of (n,{alpha}) reaction. Good agreements have been seen between them. (author)

  9. Phase diagrams of ZnTe-HgTe-Te and ZnTe-CdTe-HgTe-Te systems

    International Nuclear Information System (INIS)

    Andrukhiv, A.M.; Litvak, A.M.; Mironov, K.E.

    1992-01-01

    ZnTe-HgTe-Te system liquidus surface is investigated and solid solution layers are produced in this system by the method of liquid-phase epitaxy (LPE). The theoretical analysis of experimental and theoretical data allows to calculate the diagram of ZnTe-CdTe-HgTe-Te system fusibility. A significant effect of elastic stresses of the epitaxial layer, grown on CdTe substrate, on the process of LPE of solid solutions is established

  10. Correlation between some thermo-mechanical and physico-chemical properties in multi-component glasses of Se-Te-Sn-Cd system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Amit; Mehta, Neeraj [Banaras Hindu University, Department of Physics, Institute of Science, Varanasi (India)

    2017-06-15

    The glass transition phenomenon is guided by the swift cooling of a melt (glass-forming liquid). Consequently, the glass as a final product consists of a considerable number of micro-voids having the size of the order of atomic and/or molecular sizes. The model of free volume fluctuation helps in describing the diverse physico-chemical properties of amorphous materials (like glasses and polymers). This theory is based on the fraction of fluctuation free frozen at the glass transition temperature and it forms a basis for determination of various significant thermo-mechanical properties. In the present work, Vickers hardness test method is employed that provides useful information concerning the mechanical behavior of brittle solids. The present work emphasizes the results of micro-indentation measurements on recently synthesized novel Se{sub 78-x}Te{sub 20}Sn{sub 2}Cd{sub x} glassy system. Basic thermo-mechanical parameters such as micro-hardness, volume (V{sub h}), formation energy (E{sub h}) of micro-voids in the glassy network and modulus of elasticity (E) have been determined and their variation with glass composition has been investigated. (orig.)

  11. Correlation between some thermo-mechanical and physico-chemical properties in multi-component glasses of Se-Te-Sn-Cd system

    Science.gov (United States)

    Kumar, Amit; Mehta, Neeraj

    2017-06-01

    The glass transition phenomenon is guided by the swift cooling of a melt (glass-forming liquid). Consequently, the glass as a final product consists of a considerable number of micro-voids having the size of the order of atomic and/or molecular sizes. The model of free volume fluctuation helps in describing the diverse physico-chemical properties of amorphous materials (like glasses and polymers). This theory is based on the fraction of fluctuation free frozen at the glass transition temperature and it forms a basis for determination of various significant thermo-mechanical properties. In the present work, Vickers hardness test method is employed that provides useful information concerning the mechanical behavior of brittle solids. The present work emphasizes the results of micro-indentation measurements on recently synthesized novel Se78- x Te20Sn2Cd x glassy system. Basic thermo-mechanical parameters such as micro-hardness, volume ( V h), formation energy ( E h) of micro-voids in the glassy network and modulus of elasticity ( E) have been determined and their variation with glass composition has been investigated.

  12. Correlation between some thermo-mechanical and physico-chemical properties in multi-component glasses of Se-Te-Sn-Cd system

    International Nuclear Information System (INIS)

    Kumar, Amit; Mehta, Neeraj

    2017-01-01

    The glass transition phenomenon is guided by the swift cooling of a melt (glass-forming liquid). Consequently, the glass as a final product consists of a considerable number of micro-voids having the size of the order of atomic and/or molecular sizes. The model of free volume fluctuation helps in describing the diverse physico-chemical properties of amorphous materials (like glasses and polymers). This theory is based on the fraction of fluctuation free frozen at the glass transition temperature and it forms a basis for determination of various significant thermo-mechanical properties. In the present work, Vickers hardness test method is employed that provides useful information concerning the mechanical behavior of brittle solids. The present work emphasizes the results of micro-indentation measurements on recently synthesized novel Se_7_8_-_xTe_2_0Sn_2Cd_x glassy system. Basic thermo-mechanical parameters such as micro-hardness, volume (V_h), formation energy (E_h) of micro-voids in the glassy network and modulus of elasticity (E) have been determined and their variation with glass composition has been investigated. (orig.)

  13. Electrical and optical properties of SnEuTe and SnSrTe films

    Science.gov (United States)

    Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

    2010-06-01

    The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

  14. The system SnTe-InSe

    International Nuclear Information System (INIS)

    Gurshumov, A.P.; Alidzhanov, M.A.; Aliev, A.S.; Gadzhiev, T.G.; Mamedov, N.A.

    1986-01-01

    This paper discusses the nature of the interaction and physicochemical properties of the alloys of the system SnTe-InSe. The DTA was performed on an NTR-74 pyrometer, XPA on a Dron-2.0 diffractometer and MSA on an MIM-7 metallographic microscope. The microhardness of the samples was determined on a PMT-3 microhardness tester. The congruently melting compound SnInTeSe and solid solutions based on the starting components are formed in the system

  15. CdTe as a passivating layer in CdTe/HgCdTe heterostructures

    International Nuclear Information System (INIS)

    Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

    2008-01-01

    CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

  16. Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

    Science.gov (United States)

    Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

    1988-05-01

    The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

  17. PbSnTe injection lasers

    International Nuclear Information System (INIS)

    Oron, M.

    1982-03-01

    Carrier confined homostructure PbSnTe lasers were developed and investigated. In this laser structure good electrical and optical confinement can be achieved by a suitable carrier concentration profile. The advantage of these lasers over PbSnTe heterostructure lasers is the perfect lattice matching between the various layers of the structure. The desired carrier concentration profile was achieved by the growth of several epitaxial layers by the LPE method on a suitable substrate. The performance of these lasers was compared with that of previous homostructure and double heterostructure lasers. (H.K.)

  18. A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ameen M. Ali

    Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

  19. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe

    International Nuclear Information System (INIS)

    Tomashik, Z.F.; Tomashik, V.N.

    1987-01-01

    Using differential-thermal and microstructural analyses and mathematical design interaction in PbTe-CdS system is studied. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe is plotted. It is shown that PbTe-CdS system phase diagram is of eutectic type. Maximal solubility of CdS in PbTe attains 13 mol%, and of PbTe in CdS is not over 1 mol%. Projection of liquidus surface of the PbTe+CdS↔PbS+CdTe triple reciprocal system consists of two primary crystallization fields: CdTe x S 1-x and PbTe x S 1-x solid solutions separated by eutectic line

  20. Electrical properties of MIS devices on CdZnTe/HgCdTe

    Science.gov (United States)

    Lee, Tae-Seok; Jeoung, Y. T.; Kim, Hyun Kyu; Kim, Jae Mook; Song, Jinhan; Ann, S. Y.; Lee, Ji Y.; Kim, Young Hun; Kim, Sun-Ung; Park, Mann-Jang; Lee, S. D.; Suh, Sang-Hee

    1998-10-01

    In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, ND is low 1015 cm-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (VFB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te4+ on the surface after etching with bromine in methanol solution.

  1. Piezoelectric effect in CdTe/CdMnTe and CdTe/CdZnTe quantum wells

    International Nuclear Information System (INIS)

    Andre, Regis

    1994-01-01

    Materials with zinc-blende type structure are piezoelectric: any strain along a polar axis generates an electrical polarisation. Strained quantum wells of cubic II-VI or III-V semiconductors, grown along [111] or [112] axis, exhibit a strong built-in piezo-electric field (100 kV/cm for 1% strains). Such structures are very promising for applications to optical modulation, but it is necessary to study first the physical properties of piezoelectric heterostructures before they can be used in optical devices. For this purpose, we have performed an optical study of strained CdTe/CdMnTe or CdTe/CdZnTe quantum wells coherently grown by molecular beam epitaxy on [111] or [112] oriented substrates. Effects of piezoelectric field on optical and electronic properties of quantum wells have been analyzed in terms of the envelop function model, taking into account the effects of biaxial strains for [hhk] growth axis. Moreover, we have proposed an original way of measuring piezoelectric field in strained quantum wells, and we have used this method to show that CdTe exhibits strong non-linearities for piezoelectric field versus strain. This effect has never been mentioned before. We have also performed measurements of the piezoelectric coefficient e14 under high hydrostatic pressure inducing strains up to 2%, which shows that part of the non-linear effect is a volume effect. We have also studied the effects of the piezoelectric field on excitons in quantum wells. The binding energy decreases slightly when the electric field increases, but the oscillator strength, for the fundamental transition, decreases dramatically with the overlap of the envelope wavefunctions of electrons and holes. We have performed a modelization of an exciton in a piezoelectric quantum well using two variational parameters. This model provides an accurate calculation of excitonic absorption. Our experimental and theoretical results are in very good agreement, without any fitting parameters, for a large

  2. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  3. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  4. S and Te inter-diffusion in CdTe/CdS hetero junction

    Energy Technology Data Exchange (ETDEWEB)

    Enriquez, J. Pantoja [Cuerpo Academico-Energia y Sustentabilidad, Universidad Politecnica de Chiapas, Eduardo J. Selvas S/N, Col. Magisterial, Tuxtla Gutierrez 29010, Chiapas (Mexico); Gomez Barojas, E. [CIDS-ICUAP, Apdo. Postal 1651, 72000 Puebla (Mexico); Silva Gonzalez, R.; Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Puebla (Mexico)

    2007-09-22

    Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe{sub 1-x}S{sub x} ternary compound at the CdTe-CdS interface. (author)

  5. First-principles study on band structures and electrical transports of doped-SnTe

    Directory of Open Access Journals (Sweden)

    Xiao Dong

    2016-06-01

    Full Text Available Tin telluride is a thermoelectric material that enables the conversion of thermal energy to electricity. SnTe demonstrates a great potential for large-scale applications due to its lead-free nature and the similar crystal structure to PbTe. In this paper, the effect of dopants (i.e., Mg, Ca, Sr, Ba, Eu, Yb, Zn, Cd, Hg, and In on the band structures and electrical transport properties of SnTe was investigated based on the first-principles density functional theory including spin–orbit coupling. The results show that Zn and Cd have a dominant effect of band convergence, leading to power factor enhancement. Indium induces obvious resonant states, while Hg-doped SnTe exhibits a different behavior with defect states locating slightly above the Fermi level.

  6. Study of CdTe and HgCdTe thin films obtained by electrochemical methods

    International Nuclear Information System (INIS)

    Guillen, C.

    1990-01-01

    Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

  7. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    International Nuclear Information System (INIS)

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  8. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  9. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  10. Electrical properties of CdS/CdTe heterojunctions

    International Nuclear Information System (INIS)

    Chu, T.L.; Chu, S.S.; Ang, S.T.

    1988-01-01

    The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting heterojunctions were measured over a wide temperature range, and the capacitance-voltage characteristics were measured in the dark and under illumination. When the CdS surface is in situ cleaned prior to the deposition of the CdTe film, the current transport across the junction is controlled by a thermally activated process. Tunneling makes an important contribution to the interface recombination at temperatures below room temperature when the in situ cleaning of CdS is not used. The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. Using the in situ cleaning technique, solar cells of about 1 cm 2 area have achieved an AM 1.5 (global) efficiency of about 10.5%

  11. RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1993-01-30

    We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

  12. Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

    Science.gov (United States)

    Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

    1983-05-01

    The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

  13. Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact

    International Nuclear Information System (INIS)

    Gessert, T.A.; Asher, S.; Johnston, S.; Young, M.; Dippo, P.; Corwine, C.

    2007-01-01

    High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu i ) and oxygen on Te (O Te ) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe

  14. Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

    Energy Technology Data Exchange (ETDEWEB)

    Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

    2005-01-31

    The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

  15. Review of CdTe medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G; Garcia, D A; Tow, D E

    1977-02-01

    CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

  16. Surface tension modelling of liquid Cd-Sn-Zn alloys

    Science.gov (United States)

    Fima, Przemyslaw; Novakovic, Rada

    2018-06-01

    The thermodynamic model in conjunction with Butler equation and the geometric models were used for the surface tension calculation of Cd-Sn-Zn liquid alloys. Good agreement was found between the experimental data for limiting binaries and model calculations performed with Butler model. In the case of ternary alloys, the surface tension variation with Cd content is better reproduced in the case of alloys lying on vertical sections defined by high Sn to Zn molar fraction ratio. The calculated surface tension is in relatively good agreement with the available experimental data. In addition, the surface segregation of liquid ternary Cd-Sn-Zn and constituent binaries has also been calculated.

  17. Optical phonons in PbTe/CdTe multilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  18. Comprehensive thermodynamic description of the quasiternary system PbTe-GeTe-SnTe

    International Nuclear Information System (INIS)

    Yashina, Lada V.; Leute, Volkmar; Shtanov, Vladimir I.; Schmidtke, Heinrich M.; Neudachina, Vera S.

    2006-01-01

    The equilibrium phase diagram of the quasiternary system PbTe-GeTe-SnTe was studied experimentally in the ranges of spinodal demixing and (solid + liquid) equilibrium by means of X-ray diffraction (XRD), electron microprobe analysis (EMA) and differential thermal analysis (DTA). A model description of the phase diagram was done on the base of composition dependent interaction parameters, which were determined for the solid and the liquid phases. The interaction parameters for the quasibinary systems were recalculated in order to reach better correlation between all experimental data. It was shown that the quasiternary phase diagram can be principally described using the interaction parameters for the quasibinary subsystems, but an additional ternary interaction parameter has also to be considered. The local structure of the quasiternary solid solution is described by a four-particle cluster model. Due to the tendency of the solid solution to demix, the probability of the (GeGeGe)Te cluster was found to be higher and that of the (PbGeGe)Te cluster to be lower than it is expected for the purely statistical distribution of the clusters

  19. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  20. CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

    International Nuclear Information System (INIS)

    Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

    1999-01-01

    Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

  1. Local atomic interdiffusion in CdTe/HgCdTe multilayered structures

    International Nuclear Information System (INIS)

    Kim, Y.; Ourmazd, A.; Feldman, R.D.; Rentschler, J.A.; Taylor, D.W.; Austin, R.F.

    1989-01-01

    The authors combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way they obtain quantitative composition profiles for as grown samples, and investigate their development as a function of annealing temperature. The authors' results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. The authors' approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed

  2. High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

    Science.gov (United States)

    Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

    2012-10-01

    Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

  3. Surface passivation of HgCdTe by CdZnTe and its characteristics

    Science.gov (United States)

    Lee, T. S.; Choi, K. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Y. H.; Chang, J. M.; Song, W. S.; Kim, S. U.; Park, M. J.; Lee, S. D.

    1997-06-01

    In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (tox ˜ few ten Å) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.

  4. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  5. New developments in clinical applications of CdTe and CdZnTe detectors

    International Nuclear Information System (INIS)

    Scheiber, C.

    1996-01-01

    This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

  6. Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Terletskii, Oleg; Ryabchenko, Sergiy; Tereshchenko, Oleksandr [Institute of Physics NASU, pr. Nauki 46, 03680 Kyiv (Ukraine); Sugakov, Volodymyr; Vertsimakha, Ganna [Institute for Nuclear Research NASU, pr. Nauki 47, 03680 Kyiv (Ukraine); Karczewski, Grzegorz [Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)

    2017-05-15

    The photoluminescence (PL) from structures containing Cd{sub 0.95}Mn{sub 0.05}Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7-9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd{sub 1-x}Mn{sub x}Te QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10-20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system. Photoluminescence intensity dependence on the energy and the magnetic field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Influence of the layer parameters on the performance of the CdTe solar cells

    Science.gov (United States)

    Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

    2018-03-01

    Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

  8. Cubic Crystal-Structured SnTe for Superior Li- and Na-Ion Battery Anodes.

    Science.gov (United States)

    Park, Ah-Ram; Park, Cheol-Min

    2017-06-27

    A cubic crystal-structured Sn-based compound, SnTe, was easily synthesized using a solid-state synthetic process to produce a better rechargeable battery, and its possible application as a Sn-based high-capacity anode material for Li-ion batteries (LIBs) and Na-ion batteries (NIBs) was investigated. The electrochemically driven phase change mechanisms of the SnTe electrodes during Li and Na insertion/extraction were thoroughly examined utilizing various ex situ analytical techniques. During Li insertion, SnTe was converted to Li 4.25 Sn and Li 2 Te; meanwhile, during Na insertion, SnTe experienced a sequential topotactic transition to Na x SnTe (x ≤ 1.5) and conversion to Na 3.75 Sn and Na 2 Te, which recombined into the original SnTe phase after full Li and Na extraction. The distinctive phase change mechanisms provided remarkable electrochemical Li- and Na-ion storage performances, such as large reversible capacities with high Coulombic efficiencies and stable cyclabilities with fast C-rate characteristics, by preparing amorphous-C-decorated nanostructured SnTe-based composites. Therefore, SnTe, with its interesting phase change mechanisms, will be a promising alternative for the oncoming generation of anode materials for LIBs and NIBs.

  9. Atomic structures of Cd Te and Cd Se (110) surfaces

    International Nuclear Information System (INIS)

    Watari, K.; Ferraz, A.C.

    1996-01-01

    Results are reported based on the self-consistent density-functional theory, within the local-density approximation using ab-initio pseudopotentials of clean Cd Te and Cd Se (110) surfaces. We analyzed the trends for the equilibrium atomic structures, and the variations of the bond angles at the II-VI (110). The calculations are sensitive to the ionicity of the materials and the results are in agreement with the arguments which predict that the relaxed zinc-blend (110) surfaces should depend on ionicity. (author). 17 refs., 1 figs., 3 tabs

  10. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  11. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    International Nuclear Information System (INIS)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author)

  12. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalisches Institut der Uniwersitaet Wuerzburg, Wuerzburg (Germany)

    1995-12-31

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author). 5 refs, 3 figs, 1 tab.

  13. Changes of electronic structure of SnTe due to high concentration of Sn vacancies

    International Nuclear Information System (INIS)

    Masek, J.; Nuzhnyj, D.N.

    1997-01-01

    Non-stoichiometric Sn 1-y Te is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn 1-x Gd x Te where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling.The influence of the Sn vacancies on the band structure cannot be neglect if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that ε d can come out above the heavy-hole band. (author)

  14. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  15. Optical properties of n-CdSe sub 1-x Te sub x polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M T [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

    1991-01-01

    Absorption coefficient, {alpha}({lambda}), and energy gap, E{sub g}, of CdSe{sub 1-x}Te{sub x} thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 450-2500 nm. The thin film were electrochemically prepared on glass plates coated with conducting thin films of SnO{sub 2}. A combined method from Goodman and Lubberts was used to determine the absorption coefficient and its dependence on the wavelength. The evolution of the optical gap versus the composition of Te in CdSe{sub 1-x}Te{sub x} was made and a value of 1.4 eV of the optical gap was obtained for the composition of CdSe{sub 0.65}Te{sub 0.35}. (orig.).

  16. Study of Te Inclusions in CdMnTe Crystals for Nuclear Detector Applications

    International Nuclear Information System (INIS)

    Babalola, O.S.; Bolotnikov, A.; Groza, M.; Hossain, A.; Egarievwe, S.; James, R.; Burger, A.

    2009-01-01

    The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed.

  17. Study of Cd Te recrystallization by hydrated-CdCl{sub 2} thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez V, C.; Albor A, M. L.; Galarza G, U.; Aguilar H, J. R. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico); Flores M, J. M. [IPN, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria en Metalurgia y Materiales, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico); Jimenez O, D. [IPN, Escuela Superior de Ingenieria Mecanica y Electrica, SEPI, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico)

    2017-11-01

    Cd Te thin films solar cells are currently produced using a layer sequence of glass/FTO/CdS/Cd Te/metal contact (Cu/Ag), these films are deposited by two different techniques, chemical bath deposition (CBD) and close space vapour transport (CSVT). In order to reach reasonable conversion efficiencies, the device has to be thermally treated in a hydrated-CdCl{sub 2} atmosphere. This study was carried out using X-ray diffraction (XRD), photoluminescence, Sem-EDS, four probe method and Sims profiling of Cd Te. These analyses confirm the presence of hydrated CdCl{sub 2} and Cd Te phases on Cd Te surface and shown a good recrystallization morphology helping to the carriers mobility along the structure. Using the thermal treatment was possible to reduce the resistivity of Cd Te thin film; it is a result to the Cl migration along the Cd Te solar cell structure, reducing the defects between CdS and Cd Te thin films. A strong Cd Te thin film recrystallization was observed by the implementation of a hydrated-CdCl{sub 2} treatment doing to this a good candidate to Cd Te solar cells process. (Author)

  18. Study of Cd Te recrystallization by hydrated-CdCl_2 thermal treatment

    International Nuclear Information System (INIS)

    Hernandez V, C.; Albor A, M. L.; Galarza G, U.; Aguilar H, J. R.; Gonzalez T, M. A.; Flores M, J. M.; Jimenez O, D.

    2017-01-01

    Cd Te thin films solar cells are currently produced using a layer sequence of glass/FTO/CdS/Cd Te/metal contact (Cu/Ag), these films are deposited by two different techniques, chemical bath deposition (CBD) and close space vapour transport (CSVT). In order to reach reasonable conversion efficiencies, the device has to be thermally treated in a hydrated-CdCl_2 atmosphere. This study was carried out using X-ray diffraction (XRD), photoluminescence, Sem-EDS, four probe method and Sims profiling of Cd Te. These analyses confirm the presence of hydrated CdCl_2 and Cd Te phases on Cd Te surface and shown a good recrystallization morphology helping to the carriers mobility along the structure. Using the thermal treatment was possible to reduce the resistivity of Cd Te thin film; it is a result to the Cl migration along the Cd Te solar cell structure, reducing the defects between CdS and Cd Te thin films. A strong Cd Te thin film recrystallization was observed by the implementation of a hydrated-CdCl_2 treatment doing to this a good candidate to Cd Te solar cells process. (Author)

  19. TDPAC study of Cd-doped SnO

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, E. L., E-mail: munoz@fisica.unlp.edu.ar [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina); Carbonari, A. W. [Instituto de Pesquisas Energeticas y Nucleares-IPEN-CNEN/SP (Brazil); Errico, L. A. [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina); Bibiloni, A. G. [Universidad Nacional de La Plata, Departamento de Fisica, Facultad de Ciencias Exactas (Argentina); Petrilli, H. M. [Universidade de Sao Paulo, Instituto de Fisica (Brazil); Renteria, M. [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina)

    2007-07-15

    The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in {sup 111}In-implanted Sn-O thin films. Here we present new TDPAC experiments at {sup 111}In-diffused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295-900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.

  20. TDPAC study of Cd-doped SnO

    International Nuclear Information System (INIS)

    Munoz, E. L.; Carbonari, A. W.; Errico, L. A.; Bibiloni, A. G.; Petrilli, H. M.; Renteria, M.

    2007-01-01

    The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in 111 In-implanted Sn-O thin films. Here we present new TDPAC experiments at 111 In-diffused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295-900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.

  1. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  2. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  3. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  4. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...... report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

  5. HgCdTe photovoltaic detectors on Si substrates

    International Nuclear Information System (INIS)

    Zanio, K.R.; Bean, R.C.

    1988-01-01

    HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

  6. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  7. Density of liquid Hg(1-x)Cd(x)Te

    Science.gov (United States)

    Chandra, D.; Holland, L. R.

    1983-01-01

    Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

  8. Characterization of CdZnTe ambient temperature detectors

    International Nuclear Information System (INIS)

    Lavietes, A.

    1994-09-01

    A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

  9. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  10. Noise in CdZnTe detectors

    International Nuclear Information System (INIS)

    Luke, P. N.; Amman, M.; Lee, J. S.; Manfredi, P. F.

    2000-01-01

    Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments

  11. Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

    1998-09-01

    An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

  12. The investigation of solid solutions thin interlayers in CdS/CdTe film heterosystems

    International Nuclear Information System (INIS)

    Khrypunov, G.; Boyko, B.; Chernykh, O.

    1999-01-01

    The photo-response spectral dependence of ITO/CdTe/Au/Cu and ITO/CdS/CdTe/Au/Cu film heterosystems were investigated. At illuminations ITO/CdS/CdTe/Au/Cu heterosystems on ITO side a photo-response maximum was observed for photon absorption with a wavelength of 0.87 μm that is stipulated by formation of CdS x Te 1-x solid solutions interlayer with band gap width less than in CdTe layer. By use optical measurement transmittance spectra was selected a spectral photosensitivity interval appropriate to the contribution of non-equilibrium charge carriers generated in solid solutions interlayer by photon absorption with energy less than CdTe film band gap

  13. Effects of current stressing on the p-Bi2Te3/Sn interfacial reactions

    International Nuclear Information System (INIS)

    Chan, Hsing-Ting; Lin, Chih-Fan; Yen, Yee-Wen; Chen, Chih-Ming

    2016-01-01

    The Sn/p-Bi 2 Te 3 /Sn sandwich-type sample was current stressed with a density of 150 A/cm 2 to investigate the effects of current stressing on the p-Bi 2 Te 3 /Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi 2 Te 3 (50 °C) and cathodic p-Bi 2 Te 3 /Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi 2 Te 3 /Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10 −9 cm 2 s −1 at 120 °C. - Highlights: • Sn/p-Bi 2 Te 3 /Sn sandwich-type sample is current stressed with a density of 150 A/cm 2 . • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

  14. Pressure effects on topological crystalline insulator SnTe and derived superconductor Sn{sub 0.5}In{sub 0.5}Te

    Energy Technology Data Exchange (ETDEWEB)

    Maurya, V. K.; Shruti,; Patnaik, S., E-mail: spatnaik@mail.jnu.ac.in [School of Physical Sciences, Jawaharlal Nehru University New Delhi (India); Jha, Rajveer; Awana, V. P. S. [National Physical Laboratory, New Delhi 110012 (India)

    2016-05-23

    We are reporting decrease in superconducting transition temperature accompanied by increased metallicity in indium doped SnTe superconductor. SnTe is a topological crystalline insulator and superconductivity is achieved by indium substitution in place of tin. With application of hydrostatic pressure we find negative dT{sub c}/dP of ~ -0.6K/GPa upto 2.5 GPa. The overall phenomenon is ascribed to unconventional superconductivity. Decrease in resistivity is also seen in single crystal SnTe with application of pressure but no evidence of superconductivity is observed.

  15. An ultrasensitive hydrogen peroxide biosensor based on electrocatalytic synergy of graphene-gold nanocomposite, CdTe-CdS core-shell quantum dots and gold nanoparticles

    International Nuclear Information System (INIS)

    Gu Zhiguo; Yang Shuping; Li Zaijun; Sun Xiulan; Wang Guangli; Fang Yinjun; Liu Junkang

    2011-01-01

    Graphical abstract: We first reported an ultrasensitive hydrogen peroxide biosensor in this work, which was fabricated by coating graphene-gold nanocomposite, CdTe-CdS core-shell quantum dots, gold nanoparticles and horseradish peroxidase in sequence on the surface of gold electrode. Since a promising their electrocatalytic synergy towards hydrogen peroxide was achieved, the biosensor displayed very high sensitivity, low detection limit (S/N = 3) (3.2 x 10 -11 M) and good long-term stability (20 weeks). Highlights: · We for the first time integrated novel hydrogen peroxide biosensor based on G-AuNP, CdTe-CdS and AuNPs. · Three nanomaterials show remarkable synergistic electrocatalysis towards hydrogen peroxide. · The biosensor provides the best sensitivity in all biosensors based on graphene for detection of glucose up to now. - Abstract: We first reported an ultrasensitive hydrogen peroxide biosensor in this work. The biosensor was fabricated by coating graphene-gold nanocomposite (G-AuNP), CdTe-CdS core-shell quantum dots (CdTe-CdS), gold nanoparticles (AuNPs) and horseradish peroxidase (HRP) in sequence on the surface of gold electrode (GE). Cyclic voltammetry and differential pulse voltammetry were used to investigate electrochemical performances of the biosensor. Since promising electrocatalytic synergy of G-AuNP, CdTe-CdS and AuNPs towards hydrogen peroxide was achieved, the biosensor displayed a high sensitivity, low detection limit (S/N = 3) (3.2 x 10 -11 M), wide calibration range (from 1 x 10 -10 M to 1.2 x 10 -8 M) and good long-term stability (20 weeks). Moreover, the effects of omitting G-AuNP, CdTe-CdS and AuNP were also examined. It was found that sensitivity of the biosensor is more 11-fold better if G-AuNP, CdTe-CdS and AuNPs are used. This could be ascribed to improvement of the conductivity between graphene nanosheets in the G-AuNP due to introduction of the AuNPs, ultrafast charge transfer from CdTe-CdS to the graphene sheets and AuNP due to

  16. C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

    Directory of Open Access Journals (Sweden)

    A. Gonzalez-Cisneros

    2013-01-01

    Full Text Available In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010. The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film and the close-spaced vapor transport (for CdTe film techniques.

  17. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  18. Photovoltaic properties of sintered CdS/CdTe solar cells doped with Cu

    International Nuclear Information System (INIS)

    Park, J.W.; Ahn, B.T.; Im, H.B.; Kim, C.S.

    1992-01-01

    In this paper, all polycrystalline CdS/CdTe solar cells doped with Cu are prepared by a screen printing and sintering method. Cell parameters of the sintered CdS/CdTe solar cells have been investigated in an attempt to find out the optimum doping conditions and concentrations of Cu by adding various amounts of CuCl 2 either into CdTe layer or into back contact carbon layer. Cell parameters of the sintered CdS/CdTe solar cells which contained various amounts of CuCl 2 in the CdTe layers before sintering stay at about the same values as the amount of CuCl 2 increases up to 25 ppm, and then decreases sharply as the amount of CuCl 2 further increases. The Cu added in the CdTe layer diffuses into the CdS layer during the sintering of the CdS-CdTe composite at 625 degrees C to densify the CdTe layer and causes the decrease in the optical transmission of CdS resulting in the degradation of the cell performance. In case the Cu dopant was dispersed in the back carbon paint and was followed by annealing, all cell parameters are improved significantly compared with those fabricated by adding CuCl 2 in the CdTe layer before sintering. A sintered CdS/CdTe solar cell which contained 25 ppm CuCl 2 in the carbon paste and was annealed at 350 degrees C for 10 min shows the highest efficiency. The efficiency of this cell is 12.4% under solar irradiation with an intensity of 80.4 mW/cm 2

  19. Photostimulated changes of properties of CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Dzhafarov, T.D. [Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143 Baku (Azerbaijan); Yesilkaya, S.S. [Department of Physics, Yildiz Technical University, 34210 Esenler/Istanbul (Turkey)

    2007-08-15

    The effect of illumination during the close-spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X-ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity-temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10{sup 7}) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J{sub sc}=28 mA/cm{sup 2}, V{sub oc}=0.63 V) are considerably larger than those for cells prepared by CSSD method (J{sub sc}=22 mA/cm{sup 2}, V{sub oc}=0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    Montemont, Guillaume

    2000-01-01

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

  1. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  2. Achievements and Challenges of CdS/CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhou Fang

    2011-01-01

    Full Text Available Thin film CdS/CdTe has long been regarded as one promising choice for the development of cost-effective and reliable solar cells. Efficiency as high as 16.5% has been achieved in CdS/CdTe heterojunction structure in laboratory in 2001, and current techniques for CdS/CdTe solar cells gradually step toward commercialization. This paper reviews some novel techniques mainly within two years to solve this problem from aspects of promotion of fabrication technology, structural modification, and choice of back contact materials.

  3. Development of CdTe/Cd1-xMgxTe double barrier, single quantum well heterostructure for resonant tunneling

    International Nuclear Information System (INIS)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)

  4. Electrophysical properties of nCdS/pCdTe heterosystem

    International Nuclear Information System (INIS)

    Muzafarova, S.A.

    2006-01-01

    Full text: In this work results of research of electrophysical properties n CdS/pCdTe heterostructure are given. It is shown that at density of current 10 -8 -10 -5 A.cm -2 vol tamper characteristics in hetero system CdTe/CdS is described by thermo ionic law, and in the range 10 -4 -10 -2 A .cm -2 the current in heterostructure is limited by recombination in electronic neutral part of high-resistance of solid structure CdTe 1-x S x . Certain life time τ p and length of diffusion L p of non basic current carriers in solid structure CdTe 1-x S x , as well as superficial recombination rate v R on border of section between CdS and solid structures were considered at influence of irradiation and γ-quanta on the mechanism of current in n CdS/pCdTe heterostructure. From the analysis of dependence doze of sites the direct volt-ampere characteristics were obtained. It is shown that monotonous increase of doze of irradiation and γ-quanta leads to nonmonotonous change of micro parameters of nCdS/pCdTe heterostructure, superficial recombination rate - v R , values of both τ p and lengths of diffusion L p of non basic carriers of potential barrier - qφ B . On border of CdTe 1-x S x there is CdS-solid structure. (author)

  5. Effect of intermixing at CdS/CdTe interface on defect properties

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji-Sang, E-mail: jspark@anl.gov; Yang, Ji-Hui; Barnes, Teresa [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [Beijing Computational Science Research Center, Beijing 100094 (China)

    2016-07-25

    We investigated the stability and electronic properties of defects in CdTe{sub 1−x}S{sub x} that can be formed at the CdS/CdTe interface. As the anions mix at the interface, the defect properties are significantly affected, especially those defects centered at cation sites like Cd vacancy, V{sub Cd}, and Te on Cd antisite, Te{sub Cd}, because the environment surrounding the defect sites can have different configurations. We show that at a given composition, the transition energy levels of V{sub Cd} and Te{sub Cd} become close to the valence band maximum when the defect has more S atoms in their local environment, thus improving the device performance. Such beneficial role is also found at the grain boundaries when the Te atom is replaced by S in the Te-Te wrong bonds, reducing the energy of the grain boundary level. On the other hand, the transition levels with respect to the valence band edge of CdTe{sub 1−x}S{sub x} increases with the S concentration as the valence band edge decreases with the S concentration, resulting in the reduced p-type doping efficiency.

  6. Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

    Directory of Open Access Journals (Sweden)

    Kovaliuk T. T.

    2015-12-01

    Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

  7. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  8. Novel patterning of CdS / CdTe thin film with back contacts for ...

    Indian Academy of Sciences (India)

    Murugaiya Sridar Ilango

    2018-03-12

    Mar 12, 2018 ... The heterostructure of patterned CdS/CdTe thin films with back contact have been devised with electron ..... The carrier continuity equation is important for the car- ..... Biosensors, and Info-Tech Sensors and Systems 2015,.

  9. The morphology, microstructure, and luminescent properties of CdS/CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Jassim, M.M.; Dhere, R.G.; Jones, K.M.; Hasoon, F.S.; Sheldon, P. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    This paper is concerned with the characterization of CdS/CdTe polycrystalline thin films for solar cells. The morphology, microstructure, and luminescent properties are studied by a powerful array of characterization techniques. The presence of pinholes in 100-nm thick CdS is observed. The microstructure of CdS and CdTe films is shown to be heavily faulted polycrystalline. The effect of deposition temperature on the grain size and the microstructure is investigated. The interdiffusion of sulfur and tellurium at the CdS/CdTe interface is studied for the first time by a nanoprobe technique. Considerable amount of sulfur is detected in CdTe in the vicinity of the interface of samples deposited at 625 C. The recombination behavior of grain boundaries and intragrain defects is investigated in as-deposited and heat-treated samples.

  10. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  11. Spin dynamics in bulk CdTe at room temperature

    International Nuclear Information System (INIS)

    Nahalkova, P.; Nemec, P.; Sprinzl, D.; Belas, E.; Horodysky, P.; Franc, J.; Hlidek, P.; Maly, P.

    2006-01-01

    In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

  12. Recent state of CdTe-based radiation detectors

    International Nuclear Information System (INIS)

    Ohno, R.

    2004-01-01

    Recent state for development of CdTe-based radiation detectors is reviewed. The progress of the technologies such as the crystal growth of CdTe and CdZnTe, the deposition of electrodes on the crystal, the design of read out ASIC, and the bonding between crystal and ASIC, opened the way for the development of imaging devices for practical uses. A X-ray imager for non destructive inspections and a gamma ray imager for small animal radioisotope experiments or nuclear medicine are presented as examples. (author)

  13. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Structural, optical, and improved photocatalytic properties of CdS/SnO_2 hybrid photocatalyst nanostructure

    International Nuclear Information System (INIS)

    Venkata Reddy, Ch.; Ravikumar, R.V.S.S.N.; Srinivas, Ganganagunta; Shim, Jaesool; Cho, Migyung

    2017-01-01

    Highlights: • CdS, SnO_2, and a CdS/SnO_2 hybrid photocatalyst were synthesized using a two-step technique. • The dislocation density, strain values are higher for CdS/SnO_2 hybrid photocatalyst. • The CdS/SnO_2 has a higher surface area and smaller crystallite size compared to pristine CdS. • The CdS/SnO_2 catalyst greatly reduced recombination of electron and hole pairs. - Abstract: CdS, SnO_2 and CdS/SnO_2 hybrid photocatalyst nanostructure were synthesized using a two-step (co-precipitation/hydrothermal) method. The as-prepared materials were characterized by powder X-ray diffraction, transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), surface analysis (BET), photoluminescence spectra (PL), UV–Vis diffusion reflectance spectroscopy (DRS), fourier transform infrared spectroscopy (FT-IR), and photocatalytic activity. The band gap energies calculated from the DRS results are 3.30, 2.15, and 2.99 eV for pristine SnO_2, CdS, and the CdS/SnO_2 hybrid photocatalyst, respectively. The CdS/SnO_2 hybrid photocatalyst showed more efficient charge carrier separation and improved photocatalytic degradation of methyl orange (MO). The highest degradation rate constant was achieved for the CdS/SnO_2 hybrid photocatalyst (0.02434 min"−"1) compared to CdS (0.01381 min"−"1) and SnO_2 (0.00878 min"−"1). The present study provides insights for improving the photocatalytic activity and photo-stability of CdS/SnO_2 hybrid photocatalyst.

  15. Insulators for Pb(1-x)Sn(x)Te

    Science.gov (United States)

    Tsuo, Y. H.; Sher, A.

    1981-01-01

    Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.

  16. Kinetic barriers for Cd and Te adatoms on Cd and Te terminated CdTe (111) surface using ab initio simulations

    Science.gov (United States)

    Naderi, Ebadollah; Nanavati, Sachin P.; Majumder, Chiranjib; Ghaisas, S. V.

    2014-03-01

    In the present work we have calculated using density functional theory (DFT), diffusion barrier potentials on both the CdTe (111) surfaces, Cd terminated (A-type) & Te terminated (B-type). We employ nudge elastic band method (NEB) for obtaining the barrier potentials. The barrier is computed for Cd and for Te adatoms on both A-type and B-type surfaces. We report two energetically favourable positions along the normal to the surface, one above and other below the surface. The one above the surface has binding energy slightly more the one below. According to the results of this work, binding energy (in all cases) for adatoms are reasonable and close to experimental data. The barrier potential for hopping adatoms (Cd and Te) on both the surfaces is less than 0.35 eV. Apart from these most probable sites, there are other at least two sites on both the types of surfaces which are meta stable. We have also computed barriers for hopping to and from these meta stable positions. The present results can shade light on the defect formation mechanism in CdTe thin films during growth. The authors would like to thank C-DAC for the computing time on its PARAM series of supercomputers and DST Govt. of India, for partial funding.

  17. Magneto-transport in CdTe/CdMnTe dilute magnetic semiconductor single barrier structures

    International Nuclear Information System (INIS)

    Lyons, V.R.

    1999-03-01

    This thesis presents work done on electrical transport through dilute magnetic semiconductor (DMS) single barriers in both zero and non-zero magnetic fields. The fields are applied either perpendicular or parallel to the DMS layers. The main samples under investigation consist of 100 A and 200 A CdTe/Cd 0.8 Mn 0.2 Te/CdTe single barrier heterostructures. In addition electrical characterisation of the non magnetic layers is performed. Current through the barrier is measured as a function of voltage, magnetic field and temperature. A theoretical model is derived in order to calculate the current as a function of barrier height, barrier width, emitting layer carrier concentration, applied bias and temperature. These variables are then treated as fitting parameters and comparisons are made between the calculated and the experimental currents. The barriers are shown to produce non-Ohmic transport. The roles of quantum mechanical tunnelling and thermal activation across the barrier are investigated and shown to be highly mixed. An unexpectedly high degree of tunnelling is found to occur at high temperatures, within the region previously assumed to be dominated by thermal activation. Moreover the barrier height is found to be lower and the width greater than expected. These observations suggest that a high level of Mn diffusion occurs, possibly due to In dopant related effects. This suggestion is validated by the high emitting layer carrier concentration suggested by the fitting. At low temperatures and voltages the thicker barrier sample is shown to contain a parasitic leak path which short-circuits the barrier. This leak may exist in both samples but only becomes dominant where the barriers are sufficiently opaque to the incident carriers. Changes in a magnetic field are expected to be due to sp-d exchange induced giant Zeeman splitting in the barrier and either normal spin splitting or sp-d exchange effects in the emitter regions. The application of a magnetic field is

  18. HgCdTe e-avalanche photodiode detector arrays

    Directory of Open Access Journals (Sweden)

    Anand Singh

    2015-08-01

    Full Text Available Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

  19. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  20. The effect of excitons on CdTe solar cells

    International Nuclear Information System (INIS)

    Karazhanov, S. Zh.; Zhang, Y.; Mascarenhas, A.; Deb, S.

    2000-01-01

    Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥10 15 cm -3 . From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. (c) 2000 American Institute of Physics

  1. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  2. Crystallization study of Sn additive Se–Te chalcogenide alloys

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Rahim, M.A.; Gaber, A.; Abu-Sehly, A.A.; Abdelazim, N.M., E-mail: nana841@hotmail.co.uk

    2013-08-20

    Highlights: • The aim of the work deals with studying the crystallization kinetics by using different method. • Values of various kinetic parameters were calculated. • The results indicate that the rate of crystallization is related to the thermal stability and glass forming ability. - Abstract: Results of differential thermal analysis (DTA) under non-isothermal conditions of glasses Se{sub 90−x}Te{sub 10}Sn{sub x} (x = 0, 2.5, 5 and 7 at.%) are reported and discussed. The glass transition temperature (T{sub g}), the onset crystallization temperature (T{sub c}) and the peak temperature of crystallization (T{sub p}) were found to be dependent on the compositions and the heating rate. Values of various kinetic parameters such as activation energy of glass transition (E{sub g}), activation energy of crystallization (E{sub c}), rate constant (K{sub p}), Hurby number (H{sub r}) and the order parameter (n) were determined. For the present systems, the results indicate that the rate of crystallization is related to thermal stability and glass forming ability (GFA). According to the Avrami exponent (n), the results show a one dimensional growth for the composition Se{sub 90}Te{sub 10} and a three dimensional growth for the three other compositions. The crystalline phases resulting from DTA and (SEM) have been identified using X-ray diffraction.

  3. Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

    2014-11-28

    The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

  4. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  5. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  6. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  7. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  8. CdTe aggregates in KBr crystalline matrix

    International Nuclear Information System (INIS)

    Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Boudine, B.; Addala, S.; Guerbous, L.; Sebais, M.

    2009-01-01

    In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

  9. CdTe aggregates in KBr crystalline matrix

    Energy Technology Data Exchange (ETDEWEB)

    Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O.; Boudine, B.; Addala, S. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria)

    2009-09-15

    In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E{sub g} (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

  10. Study on response function of CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunduk; Cho, Gyuseong [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kang, Bo-Sun [Department of Radiological Science, Catholic University of Daegu, Kyoungsan, Kyoungbuk 712-702 (Korea, Republic of)], E-mail: bskang@cu.ac.kr

    2009-10-21

    So far the origin of the mechanism of light emission in the sonoluminescence has not elucidated whether it is due to blackbody radiation or bremsstrahlung. The final goal of our study is measuring X-ray energy spectrum using high-sensitivity cadmium telluride (CdTe) detector in order to obtain information for understanding sonoluminescence phenomena. However, the scope of this report is the measurement of X-ray spectrum using a high-resolution CdTe detector and determination of CdTe detector response function to obtain the corrected spectrum from measured soft X-ray source spectrum. In general, the measured spectrum was distorted by the characteristics of CdTe detector. Monte Carlo simulation code, MCNP, was used to obtain the reference response function of the CdTe detector. The X-ray spectra of {sup 57}Co, {sup 133}Ba, and {sup 241}Am were obtained by a 4x4x1.0(t) mm{sup 3} CdTe detector at room temperature.

  11. CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

    Science.gov (United States)

    Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

    2018-05-01

    As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

  12. Influence of the optical window on the performance of TCO/CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G [Universidad Nacional de Colombia, Bogota (Colombia). Dept. de Fisica; Grizalez, M [Univ. de la Amazonia, Florencia (Colombia); Moreno, L C [Dept. de Quimica, Univ. Nacional de Colombia, Bogota (Colombia); Landazabal, F [Dept. de Fisica, Univ. de Cundinamarca, Fusagasuga (Colombia)

    2000-07-01

    Thin film solar cells, with structure TCO/CdS/CdTe/Cu, were fabricated using the transparent conducting oxides (TCOs) SnO{sub 2}:F, deposited by spray pyrolysis, and ZnO, deposited by reactive evaporation, as transparent electrodes. The TCO/CdS system with the CdS layer deposited by CBD (chemical bath deposition) method acts in the cell as an optical window and the CdTe deposited by CSS (close space sublimation) method acts as absorber layer, being the unique active layer of the cell. Details of the technological aspects of the solar cells fabrication as well as a discussion to explain the effect of the TCO layer on the solar cell performance will be given. The best results obtained in this work were: open circuit voltage of 0.57 V, short circuit current of 13 mA/cm{sup 2}, fill factor of 0.63 and conversion efficiency of 5.8%. (orig.)

  13. CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

    CERN Document Server

    Fougeres, P; Hageali, M; Koebel, J M; Regal, R

    1999-01-01

    Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

  14. Microalloying with Cd of Antifriction Sn-Sb-Cu Alloys

    Directory of Open Access Journals (Sweden)

    Cinca Ionel Lupinca

    2012-09-01

    Full Text Available In the case of bimetallic sliding linings with superior technological characteristics, the use of an antifriction ally is imposed an alloy of the type Sn-Sb-Cu, which possesses a high adherence to the steel stand and a high durability in exploitation. For this reason we use the microalloying of the antifriction alloy with cadmium. The microalloying with Cd of antifriction alloys Sn-Sb-Cu determines an increase of the adhesion property of the antifriction alloy on the steel stand. The steel stand is previously subjected to a process of degreasing with ZnCl2 and washing so that is can later be subjected to a thermal-chemical treatment of tinning.

  15. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  16. Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

    Directory of Open Access Journals (Sweden)

    Mohd Sabri Mohd Ghazali

    2011-09-01

    Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

  17. Thermal stability of substitutional ag in CdTe

    NARCIS (Netherlands)

    Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

    The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the

  18. SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

    African Journals Online (AJOL)

    Preferred Customer

    variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the ... QDs requires nitrogen as the protective gas at the initial stage. ... three-fold volume isopropyl alcohol, and the sediment was collected after centrifugation at 4000.

  19. Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

    International Nuclear Information System (INIS)

    Fritsche, J.

    2003-01-01

    In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

  20. Investigation of electroluminescence properties of CdTe@CdS core ...

    Indian Academy of Sciences (India)

    CdTe@CdS(core-shell)/Mg:Ag struc- ture. .... This phenomenon can be caused by the increase in size of particles due to the growth of CdS shell. The red shift upon shell growth is the result of decrease in the kinetic energy of the excited elec-.

  1. Simple one-pot aqueous synthesis of CdHgTe nanocrystals using sodium tellurite as the Te source

    International Nuclear Information System (INIS)

    Shen, Zhitao; Luo, Chunhua; Huang, Rong; Wang, Yiting; Peng, Hui; Travas-sejdic, Jadranka

    2014-01-01

    In this work, we systematically investigated the one-pot aqueous synthesis conditions of CdHgTe nanocrystals (NCs) using sodium tellurite (Na 2 TeO 3 ) as the Te source, and found that the added content of Hg 2+ and the initial pH value of reaction solutions significantly affected the photoluminescence quantum yield (PL QY) of alloyed CdHgTe NCs. When the concentration of Cd was 1.0 mmol L −1 , the mole ratio of Cd/Te/Hg/MPA was 1:0.5:0.05:2.4, and the initial pH value of the reaction solution was about 8.78, the PL QY of as-prepared CdHgTe NCs was up to 45%. Characterization by HRTEM and XRD confirmed the crystalline nature of CdHgTe NCs. Compared to other synthetic approaches of CdHgTe NCs, our experimental results indicate that Na 2 TeO 3 could be an attractive alternative Te source to directly synthesize CdHgTe NCs in aqueous media. - Highlights: • A one-pot method was developed for the synthesis of highly luminescent CdHgTe nanocrystals (NCs). • Sodium tellurite was used as the Te source. • The quantum yield reached up to 45%. • The experimental conditions were optimized and the prepared CdHgTe NCs were characterized

  2. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Naderi, Ebadollah, E-mail: enaderi42@gmail.com [Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Nanavati, Sachin [Center for Development of Advanced Computing (C-DAC), SPPU campus, Pune 411007 (India); Majumder, Chiranjib [Chemistry Division, Bhabha Atomic Research Center, Mumbai, 400085 (India); Ghaisas, S. V. [Department of Electronic Science, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India)

    2015-01-15

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as A{sub a} site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from A{sub a} (occupied) to A{sub a} (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  3. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    Science.gov (United States)

    Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

    2015-01-01

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as Aa site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from Aa (occupied) to Aa (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  4. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    International Nuclear Information System (INIS)

    Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

    2015-01-01

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as A a site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from A a (occupied) to A a (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth

  5. Characterization of CdTe and (CdZn)Te detectors with different metal contacts

    Science.gov (United States)

    Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

    2013-09-01

    In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

  6. Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

  7. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  8. Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects.

    Science.gov (United States)

    Li, Wen; Zheng, Linglang; Ge, Binghui; Lin, Siqi; Zhang, Xinyue; Chen, Zhiwei; Chang, Yunjie; Pei, Yanzhong

    2017-05-01

    Compared to commercially available p-type PbTe thermoelectrics, SnTe has a much bigger band offset between its two valence bands and a much higher lattice thermal conductivity, both of which limit its peak thermoelectric figure of merit, zT of only 0.4. Converging its valence bands or introducing resonant states is found to enhance the electronic properties, while nanostructuring or more recently introducing interstitial defects is found to reduce the lattice thermal conductivity. Even with an integration of some of the strategies above, existing efforts do not enable a peak zT exceeding 1.4 and usually involve Cd or Hg. In this work, a combination of band convergence and interstitial defects, each of which enables a ≈150% increase in the peak zT, successfully accumulates the zT enhancements to be ≈300% (zT up to 1.6) without involving any toxic elements. This opens new possibilities for further improvements and promotes SnTe as an environment-friendly solution for conventional p-PbTe thermoelectrics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. SnTe-TiC-C composites as high-performance anodes for Li-ion batteries

    Science.gov (United States)

    Son, Seung Yeon; Hur, Jaehyun; Kim, Kwang Ho; Son, Hyung Bin; Lee, Seung Geol; Kim, Il Tae

    2017-10-01

    Intermetallic SnTe composites dispersed in a conductive TiC/C hybrid matrix are synthesized by high-energy ball milling (HEBM). The electrochemical performances of the composites as potential anodes for Li-ion batteries are evaluated. The structural and morphological characteristics of the SnTe-TiC-C composites with various TiC contents are investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy, which reveal that SnTe and TiC are uniformly dispersed in a carbon matrix. The electrochemical performance is significantly improved by introducing TiC to the SnTe-C composite; higher TiC contents result in better performances. Among the prepared composites, the SnTe-TiC (30%)-C and SnTe-TiC (40%)-C electrodes exhibit the best electrochemical performance, showing the reversible capacities of, respectively, 652 mAh cm-3 and 588 mAh cm-3 after 400 cycles and high rate capabilities with the capacity retentions of 75.4% for SnTe-TiC (30%)-C and 82.2% for SnTe-TiC (40%)-C at 10 A g-1. Furthermore, the Li storage reaction mechanisms of Te or Sn in the SnTe-TiC-C electrodes are confirmed by ex situ XRD.

  10. A facile route to shape controlled CdTe nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa); Revaprasadu, Neerish, E-mail: nrevapra@pan.uzulu.ac.za [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa)

    2011-04-15

    Research highlights: {yields} A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. {yields} This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. {yields} The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  11. A facile route to shape controlled CdTe nanoparticles

    International Nuclear Information System (INIS)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

    2011-01-01

    Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  12. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  13. The interfacial free energy of solid Sn on the boundary interface with liquid Cd-Sn eutectic solution

    International Nuclear Information System (INIS)

    Saatci, B; Cimen, S; Pamuk, H; Guenduez, M

    2007-01-01

    Equilibrated grain boundary groove shapes for solid Sn in equilibrium with Cd-Sn liquid were directly observed after annealing a sample at the eutectic temperature for about 8 days. The thermal conductivities of the solid phase, K S , and the liquid phase, K L , for the groove shapes were measured. From the observed groove shapes, the Gibbs-Thomson coefficients were obtained with a numerical method, using the measured G, K S and K L values. The solid-liquid interfacial energy of solid Sn in equilibrium with Cd-Sn liquid was determined from the Gibbs-Thomson equation. The grain boundary energy for solid Sn was also calculated from the observed groove shapes

  14. Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)

    2015-11-16

    We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

  15. Effects of CdCl2 on the growth of CdTe on CdS films for solar cells by isothermal close-spaced vapor transport

    International Nuclear Information System (INIS)

    Vaccaro, P.O.; Meyer, G.O.; Saura, J.

    1991-01-01

    CdS/CdTe solar cells were made by depositing CdTe films by an isothermal close-spaced vapor transport method on sintered CdS/glass substrates. The influence of amounts of CdCl2 ranging from 0 wt% to 8 wt% in the CdTe source on the solar cells performance was studied. Increasing the CdCl2 content enhances the CdTe grainsize but degrades the spectral response and increases the reverse saturation current. An optimal CdCl2 concentration of 1 wt% was found for a growth temperature of 620 deg C. (Author)

  16. TEM assessment of defects in (CdHg)Te heterostructures

    International Nuclear Information System (INIS)

    Lawson-Jack, S.G.; Jones, I.P.; Williams, D.J.; Astles, M.G.

    1991-01-01

    This paper reports on transmission electron microscopy used to assess the defect contents of the various layers and interfaces in (CdHg)Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3 μm thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2 left-angle 110 right-angle and either lie approximately parallel or inclined at an angle of ∼ 60 degrees to the interfactial plane

  17. Piezomodulated reflectivity on CdMnTe/CdTe quantum well structures as a new standard characterization method

    Energy Technology Data Exchange (ETDEWEB)

    Kurtz, E.; Schmitt, K.; Hommel, D.; Waag, A.; Bicknell-Tassius, R.N.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1993-01-30

    Piezomodulated reflectivity (PZR) measurements are reported for the first time as a standard characterization method for CdMnTe/CdTe single (SQW) and multiple (MQW) quantum wells grown by molecular beam epitaxy on CdTe substrates 1 mm thick. Previously, modulation spectroscopy studies of II-VI structures required thin substrates which needed special preparation. In this paper we present studies of optical properties of CdMnTe/CdTe SQWs and MWQs using the PZR technique. The samples, mounted on a sinusoidally driven piezoelectric transducer are subjected to an alternating strain. Exploiting ''lock-in'' techniques, the first derivative of the reflectivity is measured directly. Specific electronic transitions, e.g. excitons, are well resolved in the modulated spectrum and can be easily identified. This makes PZR a very sensitive and powerful tool for the characterization of quantum well structures, and a useful complement to other standard techniques such as photoluminescence and excitation spectroscopy. (orig.).

  18. Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1993-03-01

    We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

  19. Study of sub band gap absorption of Sn doped CdSe thin films

    International Nuclear Information System (INIS)

    Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

    2014-01-01

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

  20. Study of sub band gap absorption of Sn doped CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

    2014-04-24

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

  1. Structure of CdTe nanoparticles in glass

    Science.gov (United States)

    Hayes, T. M.; Nagpal, Swati; Persans, P. D.

    2000-03-01

    Optical long-pass wavelength filters are generally made by growing small crystallites of appropriate semiconductors in a transparent glass matrix. Depending on the semiconductor, these systems are candidates for interesting and important nonlinear optical switching applications. The structure of these nanocrystals has been shown to be a valuable indicator of the chemical and thermodynamic processes during crystallite growth and dissolution. We have used x-ray absorption spectroscopy to study the structure of the crystallites produced during heat treatment of filter glasses containing Cd and Te and producing optical absorption edges at the band gap of bulk CdTe. The results will be discussed.

  2. Matrix-controlled morphology evolution of Te inclusions in CdZnTe single crystal

    International Nuclear Information System (INIS)

    He, Yihui; Jie, Wanqi; Xu, Yadong; Wang, Tao; Zha, Gangqiang; Yu, Pengfei; Zheng, Xin; Zhou, Yan; Liu, Hang

    2012-01-01

    The fine morphologies of microscale Te inclusions in CdZnTe single crystal were investigated to reveal their shape evolution. Such inclusions from crystal ingots with different post-growth cooling rates were analyzed using scanning electron microscopy after surface treatment. A tetrakaidecahedron model embodying {1 0 0} and {1 1 1} matrix facets was developed to interpret the form of the Te inclusions. An entire shape evolution process was also proposed where the final configuration of the Te inclusions was a tetrahedron comprising {1 1 1}B facets.

  3. Development and prospects of CdS/CdTe solar cell

    International Nuclear Information System (INIS)

    Vaillant, L.

    2008-01-01

    Based on the n-CdS/p-CdTe heterojunction solar cell to thin films, both polycrystalline materials, started to be studied at beginning of the 1970s. However, since the 1960s were structures in which the active material was CdTe. Since then, in almost all proposed cell designs, the main problems encountered related to two important points: recombination losses associated with the main interface and the difficulty to obtain a low resistance ohmic contact with the p-CdTe. For decades, the efficiency of the cell was to rise as I studied and perfected the same from a macroscopic view of the device. Slowly they proposed, manufactured and studied structures responding with higher conversion efficiency. However, in recent years emphasis has been on the need to understand the microscopic mechanisms responsible for the transformations that occur in the device during the manufacturing process of the same. This fact has caused a deepening in the study of polycrystalline nature of the materials making up the cell, using techniques for solving micro and Nano. Special attention have been the borders of grain in the CdTe and studies related to the main junction between CdTe and CdS. This article will attempt to reflect an analysis of the evolution in the design of this type of cell, from its beginnings up to our times.

  4. Photovoltaic performance of a Cd1−xMgxTe/CdS top-cell structure

    International Nuclear Information System (INIS)

    Martinez, Omar S.; Regalado-Pérez, E.; Mathews, N.R.; Morales, Erik R.; Reyes-Coronado, David; Galvez, Geovanni Hernández; Mathew, Xavier

    2015-01-01

    In this paper we report the progress in developing a wide band gap alloy material based on CdTe to use as the top-cell absorber in tandem solar cells. High photovoltaic performance for a Cd 1−x Mg x Te/CdS top-cell was achieved by tuning the composition of the Cd 1−x Mg x Te film, and optimizing the device processing. We have carried out studies on the effect of vapor chloride treatment of the Cd 1−x Mg x Te/CdS device and the thermal annealing of the Cu/Au contacts on the opto-electronic properties of the device. With improved contact processing and post deposition treatments, we were able to achieve 9.3% efficiency for a 1.6 eV band gap top-cell; Cd 1−x Mg x Te/CdS on conductive glass substrate. - Highlights: • Cd 1−x Mg x Te films obtained by co-evaporation of CdTe and Mg • Band gap of Cd 1−x Mg x Te can be easily tuned by verifying x. • Band gap of Cd 1−x Mg x Te is stable only for short annealing durations. • Obtained efficiency of a Cd 1−x Mg x Te based device with a band gap of 1.6 eV is 9.3%

  5. Spin transport dynamics of excitons in CdTe/Cd1-xMnxTe quantum wells

    International Nuclear Information System (INIS)

    Kayanuma, Kentaro; Shirado, Eiji; Debnath, Mukul C.; Souma, Izuru; Chen, Zhanghai; Oka, Yasuo

    2001-01-01

    Transport properties of spin-polarized excitons were studied in the double quantum well system composed of Cd 0.95 Mn 0.05 Te and CdTe wells. Circular polarization degrees of the time resolved exciton photoluminescence in magnetic field showed that the spin-polarized excitons diffused from the magnetic quantum well and injected to the non-magnetic quantum well by conserving their spins. The spin-polarized excitons injected into the nonmagnetic well reaches 18% of the nonmagnetic well excitons. From the circular polarization degree and the lifetime of the magnetic quantum well excitons, the spin relaxation time of the excitons in the Cd 0.95 Mn 0.05 Te well was determined as 275 - 10 ps depending on the magnetic field strength. [copyright] 2001 American Institute of Physics

  6. Magnetic anisotropy in Pb_{1-x-y}Sn_{y}Mn_{x}Te studied by ferromagnetic resonance

    NARCIS (Netherlands)

    Eggenkamp, P.J.T.; Story, T.; Swüste, C.H.W.; Swagten, H.J.M.; Jonge, de W.J.M.

    1993-01-01

    Proceedings of the XXII International School of Semiconducting Compounds, Jaszowiec 1993 We will report on the anisotropy in (Pb)SnMnTe, studied by ferromagnetic resonance. We have found a cubic anisotropy with a = 73 × 10-4 cm-1 for Sn1-xMnxTe and a = 200 × 10-4 cm-1 for Pb0.28-xSn0.72MnxTe. We

  7. Stokes shift and fine-structure splitting in CdSe / CdTe invert type-II ...

    Indian Academy of Sciences (India)

    Worasak Sukkabot

    2018-01-09

    Jan 9, 2018 ... optical properties can be easily manipulated. The entan- ... and shape on the Stokes shift and FSS in core/shell .... Figure 4. Ground-state wave function overlaps of. CdSe/CdTe and CdTe/CdSe core/shell nanocrystals as.

  8. Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

    Science.gov (United States)

    Simchi, Hamed; Cooley, Kayla A; Ding, Zelong; Molina, Alex; Mohney, Suzanne E

    2018-05-16

    Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R c ) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H 2 O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H 2 O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the R c (ρ c ) of 0.006 Ω·mm (8 × 10 -9 Ω·cm 2 ) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10 -8 Ω·cm 2 ) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10 -9 Ω·cm 2 ) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10 -8 Ω·cm 2 ). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported

  9. Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

    International Nuclear Information System (INIS)

    Yu Pengfei; Jie Wanqi; Wang Tao

    2011-01-01

    Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8x10 11 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D 0 ,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere. - Highlights: → High resistivity is due to deep-donor level Te Cd . → The resistivity achieved was as high as 1.8x10 11 Ω cm. → Star-like inclusions are Cd inclusions. → (D 0 ,X) peak represents the improvement of the crystal quality.

  10. Effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions

    Energy Technology Data Exchange (ETDEWEB)

    Chan, Hsing-Ting; Lin, Chih-Fan [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Yen, Yee-Wen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan (China); Chen, Chih-Ming, E-mail: chencm@nchu.edu.tw [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

    2016-05-25

    The Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample was current stressed with a density of 150 A/cm{sup 2} to investigate the effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi{sub 2}Te{sub 3} (50 °C) and cathodic p-Bi{sub 2}Te{sub 3}/Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi{sub 2}Te{sub 3}/Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10{sup −9} cm{sup 2} s{sup −1} at 120 °C. - Highlights: • Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample is current stressed with a density of 150 A/cm{sup 2}. • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

  11. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Levi, D.H.; Matson, R.J. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization the authors were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  12. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Entine, G.

    1985-01-01

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  13. Gamma Spectroscopy with Pixellated CdZnTe Gamma Detectors

    International Nuclear Information System (INIS)

    Shor, A.; Mardor, I.; Eisen, Y.

    2002-01-01

    Pixellated CdZnTe detectors are good candidates for room temperature gamma detection requiring spectroscopic performance with imaging capabilities. The CdZnTe materials possess high resistivity and good electron charge transport properties. The poor charge transport for the holes inherent in the CdZnTe material can be circumvented by fabricating the electrodes in any one of a number of structures designed for unipolar charge detection[1]. Recent interest in efficient gamma detection at relatively higher gamma energies has imposed more stringent demands on the CdZnTe material and on detector design and optimization. We developed at Soreq a technique where signals from all pixels and from the common electrode are processed, and then a correction is applied for improving the energy resolution and the photopeak efficiency. For illumination with an un-collimated 133 Ba source , we obtain a combined detector energy resolution of 5.0 % FWHM for the 81 keV peak, and 1.5 % FWHM for the 356 keV peak. We discuss the importance of detector material with high electron (μτ) e for thick Pixellated detectors

  14. Hydrogenated amorphous silicon photoresists for HgCdTe patterning

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, R.E.; DeHart, C.; Wang, L.; Dinan, J.H.; Johnson, J.N.

    1997-07-01

    A process to use a hydrogenated amorphous silicon (a-Si:H) film as a dry photoresist mask for plasma etching of HgCdTe has been demonstrated. The a-Si:H films were deposited using standard plasma enhanced chemical vapor deposition with pure silane as the source gas. X-ray photoelectron spectra show that virtually no oxide grows on the surface of an a-Si:H film after 3 hours in air, indicating that it is hydrogen passivated. Ultraviolet light frees hydrogen from the surface and enhances the oxide growth rate. A pattern of 60 micron square pixels was transferred from a contact mask to the surface of an a-Si:H film by ultraviolet enhanced oxidation in air. For the conditions used, the oxide thickness was 0.5--1.0 nm. Hydrogen plasmas were used to develop this pattern by removing the unexposed regions of the film. A hydrogen plasma etch selectivity between oxide and a-Si:H of greater than 500:1 allows patterns as thick as 700 nm to be generated with this very thin oxide. These patterns were transferred into HgCdTe by etching in an electron cyclotron resonance plasma. An etch selectivity between a-Si:H and HgCdTe of greater than 4:1 was observed after etching 2,500 nm into the HgCdTe. All of the steps are compatible with processing in vacuum.

  15. Band structure of CdTe under high pressure

    International Nuclear Information System (INIS)

    Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

    2005-01-01

    The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

  16. Large linear magnetoresistance in topological crystalline insulator Pb_0_._6Sn_0_._4Te

    International Nuclear Information System (INIS)

    Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka

    2016-01-01

    Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb_0_._6Sn_0_._4Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation of the carrier mobility.

  17. Synthesis and superconductivity of In-doped SnTe nanostructures

    Directory of Open Access Journals (Sweden)

    Piranavan Kumaravadivel

    2017-07-01

    Full Text Available InxSn1−xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize InxSn1−xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of InxSn1−xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications.

  18. SnTe field effect transistors and the anomalous electrical response of structural phase transition

    International Nuclear Information System (INIS)

    Li, Haitao; Zhu, Hao; Yuan, Hui; Li, Qiliang; You, Lin; Kopanski, Joseph J.; Richter, Curt A.; Zhao, Erhai

    2014-01-01

    SnTe is a conventional thermoelectric material and has been newly found to be a topological crystalline insulator. In this work, back-gate SnTe field-effect transistors have been fabricated and fully characterized. The devices exhibit n-type transistor behaviors with excellent current-voltage characteristics and large on/off ratio (>10 6 ). The device threshold voltage, conductance, mobility, and subthreshold swing have been studied and compared at different temperatures. It is found that the subthreshold swings as a function of temperature have an apparent response to the SnTe phase transition between cubic and rhombohedral structures at 110 K. The abnormal and rapid increase in subthreshold swing around the phase transition temperature may be due to the soft phonon/structure change which causes the large increase in SnTe dielectric constant. Such an interesting and remarkable electrical response to phase transition at different temperatures makes the small SnTe transistor attractive for various electronic devices.

  19. Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

    Science.gov (United States)

    Choi, Seon Bin; Song, Man Suk; Kim, Yong

    2018-04-01

    The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

  20. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: pkuhjf@bit.edu.cn [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Jaegermann, Wolfram [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Besland, M.P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2015-05-01

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface.

  1. Microstructure of absorber layers in CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Cousins, M.A.

    2001-04-01

    This work concerns the microstructure of CSS-grown CdTe layers used for CdTe/CdS solar cells. Particular attention is given to how the development of microstructure on annealing with CdCl 2 may correlate with increases in efficiency. By annealing pressed pellets of bulk CdTe powder, it is shown that microstructural change does occur on heating the material, enhanced by the inclusion of CdCl 2 flux. However, the temperature required to cause significant effects is demonstrated to be higher than that at which heavy oxidation takes place. The dynamics of this oxidation are also examined. To investigate microstructural evolution in thin-films of CdTe, bi-layers of CdTe and CdS are examined by bevelling, thus revealing the microstructure to within ∼1 μm of the interface. This allows optical microscopy and subsequent image analysis of grain structure. The work shows that the grain-size, which is well described by the Rayleigh distribution, varies linearly throughout the layer, but is invariant under CdCl 2 treatment. Electrical measurements on these bi-layers, however, showed increased efficiency, as is widely reported. This demonstrates that the efficiency of these devices is not dictated by the bulk microstructure. Further, the region within 1 μm of the interface, of similar bi-layers to above, is examined by plan-view TEM. This reveals five-fold grain-growth on CdCl 2 treatment. Moreover, these grains show a considerably smaller grain size than expected from extrapolating the linear trend in the bulk. These observations are explained in terms of the pinning of the CdTe grain size to the underlying CdS, and the small grain size this causes. A simple model was proposed for a link between the grain-growth to the efficiency improvement. The study also examines the behaviour of defects within grains upon CdCl 2 treatment provided the first direct evidence of recovery on CdCl 2 treatment in this system. Finally, a computer model is presented to describe the evolution of

  2. Comparative study of SnS recrystallization in molten CdI{sub 2}, SnCl{sub 2}and KI

    Energy Technology Data Exchange (ETDEWEB)

    Timmo, Kristi; Kauk-Kuusik, Marit; Pilvet, Maris; Mikli, Valdek; Kaerber, Erki; Raadik, Taavi; Leinemann, Inga; Altosaar, Mare; Raudoja, Jaan [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia)

    2016-01-15

    In the present study, the recrystallization of polycrystalline SnS in different molten salts CdI{sub 2}, SnCl{sub 2} and KI as flux materials are presented. The recrystallization and growth of polycrystalline material in molten salts produces unique SnS monograin powders usable in monograin layer solar cells. XRD and Raman analysis revealed that single phase SnS powder can be obtained in KI at 740 C and in SnCl{sub 2} at 500 C. Long time heating of SnS in molten CdI{sub 2} was accompanied by chemical interaction between SnS and CdI{sub 2} that resulted in a mixture of CdS and Sn{sub 2}S{sub 3} crystals. SEM images showed that morphology of crystals can be controlled by the nature of the flux materials: needle-like Sn{sub 2}S{sub 3} together with round edged crystals of CdS in CdI{sub 2}, flat crystals of SnS with smooth surfaces in SnCl{sub 2} and well-formed SnS crystals with rounded edges in KI had been formed. The temperatures of phase transitions and/or the interactions of SnS and flux materials were determined by differential thermal analysis. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Growth features of HgCdTe LPE layers

    International Nuclear Information System (INIS)

    Huseynov, E.K.; Eminov, Sh.O.; Ibragimov, T.I.; Ismaylov, N.J.; Rajabli, A.A.

    2010-01-01

    Full text : The results of growth of Hg 1 -xCd x Te (MCT) layers by liquid phase epitaxy (LPE) from Te-rich solutions (molar fraction (Hg 1 -zCd z )(1.y)Te y , z=0.054, y=0.805 for TL=501 degrees Celsium) obtained by the tipping method in closed system is presented. Epitaxial layers with different compositions (x=0.20-0.22) and thicknesses (10-20 μm) suitable for manufacturing the photodiode structures operable at 8-14 μm spectrum range were grown on B oriented Cd 0 .96Zn 0 ,04Te polished and repolished substrates. The growth was carried out in the temperature range 500-480 degrees Celsium with cooling rates 0.05-0.1 degrees Celsium/min in a sealed quartz ampoule using the original apparatus for LPE. The attention was paid mainly to the surface morphological quality, good decantation from the layers, uniformity of composition and thickness of films. One of the limitations of the most LPE growth apparatus (cassettes) with slider or tipping system is their impossibility to wipe the last drop of growth solution from the surface of just-grown epilayer. Some remnant or residual of the growth solution tends to adhere to the surface of the epilayer after growth in such apparatus and strongly affect the surface quality. The novel apparatus for LPE providing the surface without unwanted residual drops of melt solution of Hg, Cd and Te was developed with the aim of solving such a problem. The effect of different steps of LPE growth on morphology and composition of epitaxial layers was studied. By holding the CdZnTe substrate inside the growth ampoule at the melt homogenization temperature during of 15-50 min without contact with the melt resulted in visually (using the Leitzorthoplan microscopes x 500-1000) observed surface roughness. Using the expressions for the Te-angle of Hg-Cd-Te phase diagram the effect of the preliminary synthesis of the source on liquidus temperature and composition of the epilayers was numerically evaluated. HgCdTe layers were characterized using

  4. Cumulative effects of Te precipitates in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Camarda, G.S.; Carini, G.A.; Cui, Y.; Li, L.; James, R.B.

    2007-01-01

    High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

  5. Development of a CdTe/CdS solar wafer. Final report; Entwicklung einer CdTe/CdS Duennschicht-Solarzelle. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Koentges, M.; Reineck-Koch, R.

    2002-07-01

    The focus was on the development and optimisation of the close-spaced sublimation process in an inline coating plant for production of stable high-efficiency CdS/CdTe solar wafers. An inline plant was to be constructed by ANTEC GmbH and ISFH. Film layers were to be optimised, and investigations were to show whether processing of single films is possible without breaking the vacuum, e.g. for etching. The results were to be used directly by ANTEC GmbH. An efficiency of 14 percent and an idle voltage of about 850 V were to be achieved with a film thickness of 2 {mu}m. To achieve these goals, the following project stages were envisaged: 1. Replacement of the expensive window material ITO by a less costly material. 2. Higher stability of the back contact by using appropriate intermediate layers. 3. Alternative activation processes other than the conventional CdCl{sub 2} activation. 4. Investigation of the effects of the activation step on the electric properties of the sample. [German] Die uebergreifende Aufgabenstellung des Projektes war die Entwicklung und Optimierung des Close-spaced-Sublimation verfahrens in einer Inline-Beschichtungsanlage fuer die Herstellung stabiler und hocheffizienter CdS/CdTe Duennschichtsolarzellen. Mit dem Wissen der ANTEC GmbH sollte zusammen mit dem ISFH eine Inline-Anlage konzipiert und gebaut werden. Die fuer die Solarzelle notwendigen Einzelschichten sollten in dem Inline-Prozess optimiert werden. Es sollte ermittelt werden, ob eine Prozessierung der Einzelschichten ohne Brechen des Vakuums, z.B. fuer einen Aetzschritt, moeglich ist. Die erzielten Ergebnisse sollen direkt der ANTEC GmbH zufliessen. In dem Projekt wurde als Endziel ein Wirkungsgrad der CdTe/CdS-Duennschichtsolarzelle von 14% und eine Erhoehung der Leerlaufspannung auf Werte um 850 mV angestrebt. Gleichzeitig sollte die CdTe-Schichtdicke auf 2 {mu}m vermindert werden. Um dieses Gesamtziel zu erreichen, sollen folgende Teilaufgaben bearbeitet werden: 1) Das teuere

  6. A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

    International Nuclear Information System (INIS)

    Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

    2005-01-01

    A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

  7. Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

    Directory of Open Access Journals (Sweden)

    Biliana Georgieva

    2014-05-01

    Full Text Available In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers’ surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

  8. Schottky barrier CdTe(Cl) detectors for planetary missions

    International Nuclear Information System (INIS)

    Eisen, Yosef; Floyd, Samuel

    2002-01-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

  9. Characterisation of Redlen high-flux CdZnTe

    Science.gov (United States)

    Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

    2017-12-01

    CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

  10. Preparation of water-soluble CdTe/CdS core/shell quantum dots with enhanced photostability

    International Nuclear Information System (INIS)

    Peng Hui; Zhang Lijuan; Soeller, Christian; Travas-Sejdic, Jadranka

    2007-01-01

    CdTe/CdS core/shell quantum dots (QDs) have been synthesized in an aqueous phase using thioacetamide as a sulfur source. The quantum yield was greatly enhanced by the epitaxial growth of a CdS shell, which was confirmed by X-ray photoelectron spectroscopy (XPS) results. The quantum yield of as-prepared CdTe/CdS core/shell QDs without any post-preparative processing reached 58%. The experimental results illustrate that the QDs with core/shell structure show better photostability than thioglycolic acid (TGA)-capped CdTe QDs. The cyclic voltammograms reveal higher oxidation potentials for CdTe/CdS core/shell QDs than for TGA-capped CdTe QDs, which explains the superior photostability of QDs with a core/shell structure. This enhanced photostability makes these QDs with core/shell structure more suitable for bio-labeling and imaging

  11. Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

    Energy Technology Data Exchange (ETDEWEB)

    Capper, P.; Harris, J.E.; O' Keefe, E.; Jones, C.L.; Ard, C.K.; Mackett, P.; Dutton, D. (Philips Infrared Defence Components, Southampton (United Kingdom))

    1993-01-30

    The Bridgman growth process for CdTe has been extended by applying the accelerated crucible rotation technique (ACRT). Modelling using ACRT has been extended to the 50 mm diameter required to produce grains large enough to yield CdTe(and Cd[sub 0.96]Zn[sub 0.04]Te) slices suitable for use in liquid phase epitaxy of Cd[sub x]Hg[sub 1-x]Te (CMT) layers. Two regimes are identified: ACRT parameter combinations which give maximum fluid velocities and that which maintains stable Ekman flow. Growth of crystals shows that larger single crystal regions are obtained when the Ekman flow is stable. Effects of changing the ampoule base shape have also been investigated. Techniques have been developed to produce 20 mm x 30 mm substrates oriented oriented close to the (111) direction. Assessment of these samples has included IR transmission, IR microscopy, defect etching, X-ray topography and X-ray diffraction curve width measurements. Chemical analyses have been carried out to determine impurity levels and matrix element distributions. Good quality CMT epitaxial layers, as demonstrated by good surface topography, electrical data and chemical analyses, have been grown onto material produced in this study. (orig.).

  12. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Szeles, Csaba

    2004-01-01

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  14. Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Bale, Derek S.

    2010-01-01

    Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 μm) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

  15. On the Role of Boron in CdTe and CdZnTe Crystals

    Science.gov (United States)

    Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

    2011-10-01

    It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

  16. Compton profiles and band structure calculations of CdS and CdTe

    International Nuclear Information System (INIS)

    Heda, N.L.; Mathur, S.; Ahuja, B.L.; Sharma, B.K.

    2007-01-01

    In this paper we present the isotropic Compton profiles of zinc-blende CdS and CdTe measured at an intermediate resolution of 0.39 a.u. using our 20 Ci 137 Cs Compton spectrometer. The electronic band structure calculations for both the zinc-blende structure compounds and also wurtzite CdS have been undertaken using various schemes of ab-initio linear combination of atomic orbitals calculations implemented in CRYSTAL03 code. The band structure and Mulliken's populations are reported using density functional scheme. In case of wurtzite CdS, our theoretical anisotropies in directional Compton profiles are compared with available experimental data. In case of both the zinc-blende compounds, the isotropic experimental profiles are found to be in better agreement with the present Hartree-Fock calculations. A study of the equal-valence-electron-density experimental profiles of zinc-blende CdS and CdTe shows that the CdS is more ionic than CdTe. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Novel Approach to Front Contact Passivation for CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason

    2018-02-18

    The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

  18. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  19. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    Rosaz, M.

    1997-01-01

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  20. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  1. In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

    KAUST Repository

    Avila-Avendano, Jesus

    2016-04-09

    In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

  2. In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

    KAUST Repository

    Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N.; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel

    2016-01-01

    In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

  3. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    International Nuclear Information System (INIS)

    Yuan, Zhimin; Yang, Ping

    2013-01-01

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

  4. The influence of grain boundary diffusion on the electro-optical properties of CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Albin, D.S.; Gessert, T.A.; Reedy, R.C.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Woods, L.M. [Colorado State Univ., Fort Collins, CO (United States)

    1998-09-01

    The authors report on a study of the effects of diffusion of metals through polycrystalline CdTe thin films. The metals Ni, Pd, Cu, Cr, and Te are deposited onto the back surface of 10-{micro}m thick CdTe/CdS device structures using room-temperature evaporation. The authors found that four out of the five metals produce significant changes in the photoluminescence (PL) of the near-junction CdTe material. These changes are explained in terms of spatial variations of the photoexcited carrier distribution and spatial variations in the sulfur composition of the CdTeS alloy material near the CdTeS interface. The changes in carrier distribution appear to be associated with band bending and electric fields induced by diffusion of the metals to the CdTe/CdS interface. In addition to PL measurements, the authors have also utilized a technique for detaching the CdTe film from the CdS/TCO/glass superstrate to directly access the front surface of the CdTe absorber layer. The authors have used secondary ion mass spectroscopy to measure the metal diffusion profiles from this interface.

  5. Synthesis of bulk nanocrystalline Pb-Sn-Te alloy under high pressure

    International Nuclear Information System (INIS)

    Zhu, P W; Chen, L X; Jia, X; Ma, H A; Ren, G Z; Guo, W L; Liu, H J; Zou, G T

    2002-01-01

    Pb-Sn-Te bulk nanocrystalline (NC) materials are prepared successfully by quenching melts under high pressure. The mean particle size is about 100 nm and the crystal structure is NaCl type. The mechanism of formation of the bulk NC alloy is explained: there is an increasing of the nucleation rate and a decrease in the growth rate of nuclei with increase of pressure during the solidification processes. The thermoelectric properties of Pb-Sn-Te bulk NC alloy are enhanced. This method is promising for producing thermoelectric materials with improved high-energy conversion efficiency

  6. Sensitivity of PbSnTe:In films to the radiation of free electron laser

    Science.gov (United States)

    Akimov, A. N.; Epov, V. S.; Klimov, A. E.; Kubarev, V. V.; Paschin, N. S.

    2018-01-01

    The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-x Sn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

  7. Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

    International Nuclear Information System (INIS)

    Gong Haibo; Hao Xiaopeng; Wu Yongzhong; Cao Bingqiang; Xu Hongyan; Xu Xiangang

    2011-01-01

    Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd 2+ . Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA 2− . Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd 2+ . ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

  8. Design and investigation of potential Sn-Te-P and Zr-Te-P class of Dirac materials

    Science.gov (United States)

    Sarswat, Prashant; Sarkar, Sayan; Free, Michael

    A motivation of new Dirac materials design and synthesis by perturbing the symmetry, was explored by substitution of a Sn vacancy by P that maintains the intrinsic band inversion at the L point but also the direct bandgap shrinkage upon the incorporation of spin-orbit coupling. In a similar line of investigation, Zr-Te-P was also systematically studied. The synthesis of both Sn-Te-P and Zr-Te-P system of compounds resulted in the formation of long needles type crystals and the bulk porous deposits. The exotic morphology of the P-doped SnTe needles possesses the pierced surface throughout its extension. First principle based calculations were also carried out for these sets of compounds using General Gradient Approximation (GGA) with Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional. In order to ensure structural optimization, a limited memory Broyden-Fletcher-Goldfarb-Shanno (LBFGS) algorithm was employed and the total energy in PBE exchange-correlation functional was considered for the calculation of the formation energy per atom. The new modifications have a potential to establish the new class of Dirac materials ushering upon new frontiers of interest.

  9. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  10. High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

    International Nuclear Information System (INIS)

    Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

    2013-06-01

    We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

  11. Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

  12. Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

    Science.gov (United States)

    Flores, Mauricio A.

    2018-01-01

    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

  13. Low-Cost Lattice Matching Si Based Composite Substrates for HgCdTe

    Science.gov (United States)

    2013-09-01

    211). ..............................................5 Figure 3. Relationship between calculated alloy compositions based on Se/CdTe BEP ratio and...Se:CdTe beam equivalent pressure ( BEP ) ratios. During CdSeTe growth, Se and Te are in competition for the same nucleation sites. If we assume that all...therefore, x(cal) = ΦSe/ΦCd = 2ΦSe/ΦCdTe, where Φ is the BEP of the material, measured by the nude ion gauge at the substrate position. Figure 3 shows the

  14. Performance of prototype segmented CdZnTe arrays

    International Nuclear Information System (INIS)

    Parsons, A.; Palmer, D.M.; Kurczynski, P.; Barbier, L.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Krizmanic, J.; Stahle, C.M.; Tueller, J.; Teegarden, B.

    1998-01-01

    The Burst and All Sky Imaging Survey (BASIS) is a proposed mission to provide ∼3 arc second locations of approximately 90 Gamma-Ray Bursts (GRBs) per year. The BASIS coded aperture imaging system requires a segmented detector plane able to detect the interaction position of (10--150 keV) photons to less than 100 microm. To develop prototype detector arrays with such fine position resolution the authors have fabricated many 15 mm x 15 mm x 2 mm 100 microm pitch CdZnTe strip detectors. They have assembled these fine pitch CdZnTe strip detectors into prototype 2 x 2 and 6 x 6 element arrays read out by ASIC electronics. The assembly and electronics readout of the 6 x 6 flight prototype array will be discussed, and preliminary data illustrating the uniformity and efficiency of the array will be presented

  15. Current simulation of symmetric contacts on CdTe

    International Nuclear Information System (INIS)

    Ruzin, A.

    2011-01-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  16. Current simulation of symmetric contacts on CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2011-12-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  17. Charge transport properties of CdMnTe radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

    2012-04-11

    Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

  18. Charge transport properties of CdMnTe radiation detectors

    Directory of Open Access Journals (Sweden)

    Prokopovich D. A.

    2012-10-01

    Full Text Available Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55 cm2/Vs at room temperature.

  19. A 90 element CdTe array detector

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Y.; Onozuka, A.; Ohmori, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Electronic Material and Components Labs.); Funaki, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Materials Development Research Labs.)

    1992-11-15

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 [mu]s, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV [gamma]-rays. (orig.).

  20. A 90 element CdTe array detector

    Science.gov (United States)

    Iwase, Y.; Funaki, M.; Onozuka, A.; Ohmori, M.

    1992-11-01

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 μs, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV γ-rays.

  1. Defect creation rates in CdTe irradiated by electrons

    International Nuclear Information System (INIS)

    Caillot, M.

    1978-01-01

    Up to now, the defect creation rates in CdTe irradiated by electrons were unknown. They have been calculated for different electron kinetic energies. As the samples studied are thick, the energy loss when the electrons penetrate the material has been taken into account. The cross-sections of Cd and Te displacements vs the depth of electron penetration were determined for different electron kinetic energies, and the defect creation rates obtained for each sublattice. These creation rates have been compared with those deduced from experiments and it was found that the experimental creation rates were lower than the calculated ones. This discrepancy can be explained in terms of creation of neutral Frenkel pairs. (Auth.)

  2. Metastability and reliability of CdTe solar cells

    Science.gov (United States)

    Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

    2018-04-01

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

  3. Advanced processing of CdTe pixel radiation detectors

    Science.gov (United States)

    Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

    2017-12-01

    We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

  4. Improved HgCdTe detectors with novel antireflection coating

    Science.gov (United States)

    Babu, Sachi R.; Hu, Kelley; Manthripragada, Sridhar; Martineau, Robert J.; Kotecki, C. A.; Peters, F. A.; Burgess, A. S.; Krebs, Danny J.; Mott, David B.; Ewin, Audrey J.; Miles, A.; Nguyen, Trang L.; Shu, Peter K.

    1996-10-01

    The composite infrared spctrometer (CIRS) is an important instrument for the upcoming Cassini mission for sensing infrared (IR) radiation from the Saturanian planetary system. We have delivered a linear, ten element, mercury cadmium telluride (HgCdTe) photoconductive detector array for use on focal plane 3 (FP3), which is responsible for detecting radiation from the 9.1 micrometer to 16.6 micrometer wavelength range. Reliable HgCdTe detectors require robust passivation, a low-stress zinc sulfide (ZnS) anti-reflection (AR) coating with good adhesion, and a proper optical cavity design to smooth out the resonance in the detector spectral response. During the development of CIRS flight array, we have demonstrated the potential of using an in-situ interfacial layer, such as SiN(subscript x), between ZnS and the anodic oxide. Such an interfacial layer drastically improves the adhesion between the ZnS and oxide, without degrading the minority carrier lifetime. We have also demonstrated the feasibility of applying a SiN(subscript x) 'rain coat' layer over the ZnS to prevent moisture and other chemicals from attacking the AR coating, thus improving the long term reliability. This also enables device operation in a hazardous environment. The alumina/epoxy/HgCdTe/oxide/ZnS structure is a complicated multi-cavity optical system. We have developed an extensive device simulation, which enables us to make the optimal choice of individual cavity thickness for minimizing the resonance and maximizing the quantum efficiency. We have also used 0.05 micrometer alumina powder loaded epoxy to minimize the reflections at the epoxy/HgCdTe interface, thus minimizing the resonance.

  5. Study of the CdX-B2X3-X (X=S, Se), CdTe-B-Te systems

    International Nuclear Information System (INIS)

    Odin, I.N.; Grin'ko, V.V.; Safronov, E.V.; Kozlovskij, V.F.

    2001-01-01

    Liquidus surfaces of the CdX-B 2 X 3 -X (X=S, Se), CdTe-B-Te systems are plotted for the first time. It is shown that in equilibrium solid solutions on the basis of ternary Cd 2 B 2 X 5 compounds and binary B 2 X 3 , CdX, BS 2 compounds take part with liquid phases. p gen -T and T-x projects of p-T-x phase diagram of B-S (59-100 at. % S), B-Se (59-100 at. % Se), B-Te systems are plotted . B 2 X 3 , BS 2 compounds are formed in that regions of compositions of B-X systems . In the B-Te system compounds are not formed. Ternary compounds are not formed in the CdTe-B-Te system [ru

  6. Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

    Science.gov (United States)

    Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

    2018-02-01

    This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

  7. MOCVD growth of transparent conducting Cd2SnO4 thin films

    International Nuclear Information System (INIS)

    Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

    2004-01-01

    The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  8. Massless Dirac fermions in semimetal HgCdTe

    Science.gov (United States)

    Marchewka, M.; Grendysa, J.; Żak, D.; Tomaka, G.; Śliż, P.; Sheregii, E. M.

    2017-01-01

    Magneto-transport results obtained for the strained 100 nm thick Hg1-x CdxTe (x=0.135) layer grown by MBE on the CdTe/GaAs substrate are interpreted by the 8×8 kp model with the in-plane tensile strain. The dispersion relation for the investigated structure proves that the Dirac point is located in the gap caused by the strain. It is also shown that the fan of the Landau Levels (LL's) energy calculated for topological protected surface states for the studied HgCdTe alloy corresponds to the fan of the LL's calculated using the graphen-like Hamiltonian which gives excellent agreement with the experimental data for velocity on the Fermi level equal to vf ≈ 0.85×106 m/s. That characterized strained Hg1-x CdxTe layers (0.13 < x < 0.14) are a perfect Topological Insulator with good perspectives of further applications.

  9. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  10. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  11. Infrared Illuminated CdZnTe detectors with improved performance

    International Nuclear Information System (INIS)

    Ivanov, V.; Loutchanski, A.; Dorogov, P.; Khinoverov, S.

    2013-06-01

    It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm 3 to larger with volumes of 1.5 cm 3 and 4.0 cm 3 . The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm 3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

  12. Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

    Science.gov (United States)

    Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

    2017-07-01

    Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

  13. Structural, optical, and improved photocatalytic properties of CdS/SnO{sub 2} hybrid photocatalyst nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Venkata Reddy, Ch., E-mail: cvrphy@gmail.com [School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Ravikumar, R.V.S.S.N. [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522510 (India); Srinivas, Ganganagunta [Engineering Department, lbra College of Technology, lbra 400 (Oman); Shim, Jaesool, E-mail: jshim@ynu.ac.kr [School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Cho, Migyung, E-mail: mgcho@tu.ac.kr [Department of Game Engineering, Tongmyong University, Busan 608-711 (Korea, Republic of)

    2017-07-15

    Highlights: • CdS, SnO{sub 2}, and a CdS/SnO{sub 2} hybrid photocatalyst were synthesized using a two-step technique. • The dislocation density, strain values are higher for CdS/SnO{sub 2} hybrid photocatalyst. • The CdS/SnO{sub 2} has a higher surface area and smaller crystallite size compared to pristine CdS. • The CdS/SnO{sub 2} catalyst greatly reduced recombination of electron and hole pairs. - Abstract: CdS, SnO{sub 2} and CdS/SnO{sub 2} hybrid photocatalyst nanostructure were synthesized using a two-step (co-precipitation/hydrothermal) method. The as-prepared materials were characterized by powder X-ray diffraction, transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), surface analysis (BET), photoluminescence spectra (PL), UV–Vis diffusion reflectance spectroscopy (DRS), fourier transform infrared spectroscopy (FT-IR), and photocatalytic activity. The band gap energies calculated from the DRS results are 3.30, 2.15, and 2.99 eV for pristine SnO{sub 2}, CdS, and the CdS/SnO{sub 2} hybrid photocatalyst, respectively. The CdS/SnO{sub 2} hybrid photocatalyst showed more efficient charge carrier separation and improved photocatalytic degradation of methyl orange (MO). The highest degradation rate constant was achieved for the CdS/SnO{sub 2} hybrid photocatalyst (0.02434 min{sup −1}) compared to CdS (0.01381 min{sup −1}) and SnO{sub 2} (0.00878 min{sup −1}). The present study provides insights for improving the photocatalytic activity and photo-stability of CdS/SnO{sub 2} hybrid photocatalyst.

  14. Unexpected Au Alloying in Tailoring In-Doped SnTe Nanostructures with Gold Nanoparticles

    Directory of Open Access Journals (Sweden)

    Samuel Atherton

    2017-03-01

    Full Text Available Materials with strong spin-orbit interaction and superconductivity are candidates for topological superconductors that may host Majorana fermions (MFs at the edges/surfaces/vortex cores. Bulk-superconducting carrier-doped topological crystalline insulator, indium-doped tin telluride (In-SnTe is one of the promising materials. Robust superconductivity of In-SnTe nanostructures has been demonstrated recently. Intriguingly, not only 3-dimensional (3D nanostructures but also ultra-thin quasi-2D and quasi-1D systems can be grown by the vapor transport method. In particular, nanostructures with a controlled dimension will give us a chance to understand the dimensionality and the quantum confinement effects on the superconductivity of the In-SnTe and may help us work on braiding MFs in various dimensional systems for future topological quantum computation technology. With this in mind, we employed gold nanoparticles (GNPs with well-identified sizes to tailor In-SnTe nanostructures grown by vapor transport. However, we could not see clear evidence that the presence of the GNPs is necessary or sufficient to control the size of the nanostructures. Nevertheless, it should be noted that a weak correlation between the diameter of GNPs and the dimensions of the smallest nanostructures has been found so far. To our surprise, the ones grown under the vapor–liquid–solid mechanism, with the use of the GNPs, contained gold that is widely and inhomogeneously distributed over the whole body.

  15. Type conversion, contacts, and surface effects in electroplated CdTe films

    International Nuclear Information System (INIS)

    Basol, B.M.; Ou, S.S.; Stafsudd, O.M.

    1985-01-01

    Efficient electroplated CdS/CdTe solar cells can be fabricated by heat treating and type-converting the n-CdTe films deposited on CdS layers. In this paper, various mechanisms which may give rise to the conversion of electroplated CdTe films from n to p type are investigated. It is concluded that Cd-vacancy generation is the main mechanism of type conversion. Possible effects of oxygen on this mechanism are also discussed. Evaporated Au contacts to electroplated p-CdTe films were studied. It was found that the Au contacts depleted the excess Te present on the surface of Br 2 -methanol etched p-CdTe films. Oxygen was found to affect the electrical characteristics of such contacts

  16. Radiative recombination of free and bound excitons in CdMnTe/CdMgTe quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Gubarev, S.I. [Rossijskaya Akademiya Nauk, Chernogolovka (Russian Federation). Inst. Fiziki Tverdogo Tela; Kulakovskii, V.D. [Rossijskaya Akademiya Nauk, Chernogolovka (Russian Federation). Inst. Fiziki Tverdogo Tela; Tyazhlov, M.G. [Rossijskaya Akademiya Nauk, Chernogolovka (Russian Federation). Inst. Fiziki Tverdogo Tela; Yakovlev, D.R. [Wuerzburg Univ. (Germany). Physikalisches Inst.; Waag, A. [Wuerzburg Univ. (Germany). Physikalisches Inst.; Landwehr, G. [Wuerzburg Univ. (Germany). Physikalisches Inst.

    1995-06-01

    The exchange induced dissociation of bound excitons (BE) has been studied in CdMnTe/CdMgTe quantum wells (QWs). It was found that value of the dissociation critical field does not depend on the field direction with respect to QW axis. This indicates that BE states in investigated structure are connected with excitons bound to neutral donors (D{sub 0}X states). The dependence of the critical field on the QW width has nonmonotonic character: the dissociation occurs at first in 60 A, then in 45 A, and at the end in 100 A QW. Such a behavior can be explained by transformation of bound exciton complex from quasi-3D to quasi-2D state with following increase of Coulomb correlations in confined exciton system. (orig.).

  17. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    Energy Technology Data Exchange (ETDEWEB)

    Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  18. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    International Nuclear Information System (INIS)

    Oliveira, Icimone B.

    2011-01-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  19. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  20. Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles

    Science.gov (United States)

    Ribeiro, Guilherme A. S.; Paulatto, Lorenzo; Bianco, Raffaello; Errea, Ion; Mauri, Francesco; Calandra, Matteo

    2018-01-01

    At room temperature, PbTe and SnTe are efficient thermoelectrics with a cubic structure. At low temperature, SnTe undergoes a ferroelectric transition with a critical temperature strongly dependent on the hole concentration, while PbTe is an incipient ferroelectric. By using the stochastic self-consistent harmonic approximation, we investigate the anharmonic phonon spectra and the occurrence of a ferroelectric transition in both systems. We find that vibrational spectra strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory. If gradient corrections and the theoretical volume are employed, then the calculation of the phonon frequencies as obtained from the diagonalization of the free-energy Hessian leads to phonon spectra in good agreement with experimental data for both systems. In PbTe we evaluate the linear thermal expansion coefficient γ =2.3 ×10-5K-1 , finding it to be in good agreement with experimental value of γ =2.04 ×10-5K-1 . Furthermore, we study the phonon spectrum and we do reproduce the transverse optical mode phonon satellite detected in inelastic neutron scattering and the crossing between the transverse optical and the longitudinal acoustic modes along the Γ X direction. The phonon satellite becomes broader at high temperatures but its energy is essentially temperature independent, in agreement with experiments. We decompose the self-consistent harmonic free energy in second-, third-, and fourth-order anharmonic terms. We find that the third- and fourth-order terms are small. However, treating the third-order term perturbatively on top of the second-order self-consistent harmonic free energy overestimates the energy of the satellite associated with the transverse optical mode. On the contrary, a perturbative treatment on top of the harmonic Hamiltonian breaks down and leads to imaginary phonon frequencies already at 300 K. In the case of SnTe, we describe the occurrence of a ferroelectric

  1. Carrier concentration dependence of structural disorder in thermoelectric Sn1−xTe

    Directory of Open Access Journals (Sweden)

    Mattia Sist

    2016-09-01

    Full Text Available SnTe is a promising thermoelectric and topological insulator material. Here, the presumably simple rock salt crystal structure of SnTe is studied comprehensively by means of high-resolution synchrotron single-crystal and powder X-ray diffraction from 20 to 800 K. Two samples with different carrier concentrations (sample A = high, sample B = low have remarkably different atomic displacement parameters, especially at low temperatures. Both samples contain significant numbers of cation vacancies (1–2% and ordering of Sn vacancies possibly occurs on warming, as corroborated by the appearance of multiple phases and strain above 400 K. The possible presence of disorder and anharmonicity is investigated in view of the low thermal conductivity of SnTe. Refinement of anharmonic Gram–Charlier parameters reveals marginal anharmonicity for sample A, whereas sample B exhibits anharmonic effects even at low temperature. For both samples, no indications are found of a low-temperature rhombohedral phase. Maximum entropy method (MEM calculations are carried out, including nuclear-weighted X-ray MEM calculations (NXMEM. The atomic electron densities are spherical for sample A, whereas for sample B the Te electron density is elongated along the 〈100〉 direction, with the maximum being displaced from the lattice position at higher temperatures. Overall, the crystal structure of SnTe is found to be defective and sample-dependent, and therefore theoretical calculations of perfect rock salt structures are not expected to predict the properties of real materials.

  2. Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

    Science.gov (United States)

    Moore, Andrew

    Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

  3. Effect of magnetic field on the donor impurity in CdTe/Cd1-xMnxTe quantum well wire

    Science.gov (United States)

    Kalpana, P.; Reuben, A. Merwyn Jasper D.; Nithiananthi, P.; Jayakumar, K.

    2016-05-01

    The donor impurity binding energy in CdTe / Cd1-xMnxTe QWW with square well confinement along x - direction and parabolic confinement along y - direction under the influence of externally applied magnetic field has been computed using variational principle in the effective mass approximation. The spin polaronic shift has also been computed. The results are presented and discussed.

  4. Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

  5. HgTe-CdTe phase diagrams calculation by RAS model

    International Nuclear Information System (INIS)

    Hady, A.A.A.

    1986-11-01

    The model of Regular Associated Solutions (RAS) for binary solution, which extended onto the ternary solution was used for Mercury-Cadnium-Tellurim phase diagrams calculations. The function of dissociation parameters is used here as a function of temperature and it is independent of composition. The ratio of mole fractions has a weak dependence on temperature and is not neglected. The calculated liquidus binary temperature and the experimental one are so fitted to give the best values of parameters used to calculate the HgTe-CdTe phase diagrams. (author)

  6. Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

    Energy Technology Data Exchange (ETDEWEB)

    Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Vasilyeva, G. Yu.; Ivánov, Yu. L.; Zakhar’in, A. O.; Andrianov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Vorobiev, L. E.; Firsov, D. A. [Peter the Great Saint-Petersburg Polytechnic University (Russian Federation); Grigoriev, M. N. [Ustinov Baltic State Technical University “VOENMEKh” (Russian Federation); Antonov, A. V.; Ikonnikov, A. V.; Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-07-15

    The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.

  7. Reassignment of oxygen-related defects in CdTe and CdSe

    Energy Technology Data Exchange (ETDEWEB)

    Bastin, Dirk

    2015-05-22

    This thesis reassigns the O{sub Te}-V{sub Cd} complex in CdTe and the O{sub Se}-V{sub Cd} complex in CdSe to a sulfur-dioxygen complex SO{sub 2}*, and the O{sub Cd} defect in CdSe to a V{sub Cd}H{sub 2} complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν{sub 1}) and 1108.3 cm{sup -1} (ν{sub 2}) previously assigned to an O{sub Te}-V{sub Cd} complex are detected in CdTe single crystals doped with CdSO{sub 4} powder. Five weaker additional absorption lines accompanying ν{sub 1} and ν{sub 2} could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO{sub 2}* having two configurations labeled ν{sub 1} and ν{sub 2}. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν{sub 1} and ν{sub 2}, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ{sub 1}), 1107.5 (γ{sub 2}), and 1126.3 cm{sup -1} (γ{sub 3}) previously attributed to an O{sub Se}-V{sub Cd} complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO{sub 2}* having three configurations γ{sub 1}, γ{sub 2}, and γ{sub 3}. IR absorption measurements with uniaxial stress applied to the

  8. Reformulated tight binding calculation for band discontinuity at CdTe/Hg xCd1-xTe heterointerfaces and their type I-type III transitions

    International Nuclear Information System (INIS)

    Ekpunobi, A.J.

    2005-01-01

    A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg x Cd 1-x Te interface in the s 2 p 2 configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point

  9. A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yuelu; Wang, Linjun, E-mail: ljwang@shu.edu.cn; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

    2016-12-01

    Highlights: • Graphene layer was spin-coated on CdZnTe to form Au/graphene/CdZnTe/FTO structure. • Graphene layer can significantly improve the contact property of Au/CdZnTe. • Graphene layer can obviously enhance UV photo-response of CdZnTe. • Graphene is a potential buffer material for CdZnTe based high-energy detectors. - Abstract: In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

  10. Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

    Science.gov (United States)

    Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

    2014-12-01

    A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

  11. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  12. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  13. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  14. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  15. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

    2008-01-01

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  16. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

  17. CdTe and CdSe quantum dots: synthesis, characterizations and applications in agriculture

    International Nuclear Information System (INIS)

    Ung, Thi Dieu Thuy; Tran, Thi Kim Chi; Pham, Thu Nga; Nguyen, Quang Liem; Nguyen, Duc Nghia; Dinh, Duy Khang

    2012-01-01

    This paper highlights the results of the whole work including the synthesis of highly luminescent quantum dots (QDs), characterizations and testing applications of them in different kinds of sensors. Concretely, it presents: (i) the successful synthesis of colloidal CdTe and CdSe QDs, their core/shell structures with single- and/or double-shell made by CdS, ZnS or ZnSe/ZnS; (ii) morphology, structural and optical characterizations of the synthesized QDs; and (iii) testing examples of QDs as the fluorescence labels for agricultural-bio-medical objects (for tracing residual pesticide in agricultural products, residual clenbuterol in meat/milk and for detection of H5N1 avian influenza virus in breeding farms). Overall, the results show that the synthesized QDs have very good crystallinity, spherical shape and strongly emit at the desired wavelengths between ∼500 and 700 nm with the luminescence quantum yield (LQY) of 30–85%. These synthesized QDs were used in fabrication of the three testing fluorescence QD-based sensors for the detection of residual pesticides, clenbuterol and H5N1 avian influenza virus. The specific detection of parathion methyl (PM) pesticide at a content as low as 0.05 ppm has been realized with the biosensors made from CdTe/CdS and CdSe/ZnSe/ZnS QDs and the acetylcholinesterase (AChE) enzymes. Fluorescence resonance energy transfer (FRET)-based nanosensors using CdTe/CdS QDs conjugated with 2-amino-8-naphthol-6-sulfonic acid were fabricated that enable detection of diazotized clenbuterol at a content as low as 10 pg ml −1 . For detection of H5N1 avian influenza virus, fluorescence biosensors using CdTe/CdS QDs bound on the surface of chromatophores extracted and purified from bacteria Rhodospirillum rubrum were prepared and characterized. The specific detection of H5N1 avian influenza virus in the range of 3–50 ng μl −1 with a detection limit of 3 ng μL −1 has been performed based on the antibody-antigen recognition. (review)

  18. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  19. Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

    Science.gov (United States)

    Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Sidorov, G. Yu.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.

    2018-03-01

    Admittance of MIS structures based on n( p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical characteristics of MIS structures based on graded-gap n-HgCdTe for a small range of the voltage variation. For a wide range of the voltage variation, the hysteresis of the capacitance-voltage characteristics appears for MIS structures based on n-HgCdTe with the CdTe/Al2O3 insulator. However, the hysteresis mechanism differs from that in case of a single-layer Al2O3 insulator. For MIS structures based on p-HgCdTe, introduction of an additional CdTe layer does not lead to a significant decrease of the hysteresis phenomena, which may be due to the degradation of the interface properties when mercury leaves the film as a result of low-temperature annealing changing the conductivity type of the semiconductor.

  20. Dewetted growth of CdTe in microgravity (STS-95)

    International Nuclear Information System (INIS)

    Fiederle, M.; Babentsov, V.; Benz, K.W.; Duffar, T.; Dusserre, P.; Corregidor, V.; Dieguez, E.; Delaye, P.; Roosen, G.; Chevrier, V.; Launay, J.C.

    2004-01-01

    Two CdTe crystals had been grown in microgravity during the STS-95 mission. The growth configuration was dedicated to obtain dewetting of the crystals and to achieve high quality material. Background for the performed experiments was based on the theory of the dewetting and previous experience. The after flight characterization of the crystals has demonstrated existence of the dewetting areas of the crystals and their improved quality regarding the earth grown reference sample. The samples had been characterized by EDAX, Synchrotron X-ray topography, Photoluminescence and Optical and IR microscopy. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  2. Magnetic circular dichroism of CdTe nanoparticles

    Science.gov (United States)

    Malakhovskii, A. V.; Sokolov, A. E.; Tsipotan, A. S.; Zharkov, S. M.; Zabluda, V. N.

    2018-04-01

    Magnetic circular dichroism (MCD) of water-soluble CdTe nanoparticles was observed in the visible spectral range for the first time. Diameter of nanoparticles varied from 2.3 to 4.5 nm. Absorption and photoluminescence spectra were also recorded. Absorption line at 19400 cm-1 and luminescent line at 18200 cm-1 were observed. Splitting of value 960 cm-1 was revealed in the MCD spectrum. Approximately the same splitting was extracted from the absorption spectrum. The MCD was identified as the temperature independent paramagnetic mixing effect. Nature of the absorption line and of its splitting are discussed.

  3. Study of a new architecture of gamma cameras with Cd/ZnTe/CdTe semiconductors; Etude d'une nouvelle architecture de gamma camera a base de semi-conducteurs CdZnTe /CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guerin, L

    2007-11-15

    This thesis studies new semi conductors for gammas cameras in order to improve the quality of image in nuclear medicine. The chapter 1 reminds the general principle of the imaging gamma, by describing the radiotracers, the channel of detection and the types of Anger gamma cameras acquisition. The physiological, physical and technological limits of the camera are then highlighted, to better identify the needs of future gamma cameras. The chapter 2 is dedicated to a bibliographical study. At first, semi-conductors used in imaging gamma are presented, and more particularly semi-conductors CDTE and CdZnTe, by distinguishing planar detectors and monolithic pixelated detectors. Secondly, the classic collimators of the gamma cameras, used in clinical routine for the most part of between them, are described. Their geometry is presented, as well as their characteristics, their advantages and their inconveniences. The chapter 3 is dedicated to a state of art of the simulation codes dedicated to the medical imaging and the methods of reconstruction in imaging gamma. These states of art allow to introduce the software of simulation and the methods of reconstruction used within the framework of this thesis. The chapter 4 presents the new architecture of gamma camera proposed during this work of thesis. It is structured in three parts. The first part justifies the use of semiconducting detectors CdZnTe, in particular the monolithic pixelated detectors, by bringing to light their advantages with regard to the detection modules based on scintillator. The second part presents gamma cameras to base of detectors CdZnTe (prototypes or commercial products) and their associated collimators, as well as the interest of an association of detectors CdZnTe in the classic collimators. Finally, the third part presents in detail the HiSens architecture. The chapter 5 describes both software of simulation used within the framework of this thesis to estimate the performances of the Hi

  4. Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina

    International Nuclear Information System (INIS)

    Sochinskii, N.V.; Abellan, M.; Martin Gonzalez, M.; Saucedo, E.; Dieguez, E.; Briones, F.

    2006-01-01

    The vapour phase growth (VPG) of CdTe and Cd 1- x Zn x Te was performed in order to investigate the formation of Cd(Zn)Te columnar nanostructures, which could serve as a basis for micropixels usable for further development of X- and gamma-ray high-resolution imaging devices. The possibility to form the 'Cd(Zn)Te-in-porous alumina' nanostructures by VPG has been demonstrated. The Cd(Zn)Te crystals integrated into nanoporous alumina have shown to have photoluminescence properties compatible with those of the bulk crystals and planar epitaxial layers. Further investigations are going on to improve the structural quality of Cd(Zn)Te nanocrystals

  5. Nanocrystalline CdSnO3 Based Room Temperature Methanol Sensor

    Directory of Open Access Journals (Sweden)

    Shanabhau BAGUL

    2017-04-01

    Full Text Available Synthesis of nanocrystalline CdSnO3 powder by ultrasonic atomizer assisted wet chemical method is reported in this paper. Synthesized CdSnO3 powder was characterized by X-Ray Diffraction (XRD, Field Emission Scanning Electron Microscopy (FESEM and Transmission Electron Microscopy (TEM to examine phase and microstructure. FESEM and TEM analysis reveals that the CdSnO3 powder prepared here is porous monodisperse nanocrystalline in nature, with average particle size of approximately 17 nm or smaller. The material is also characterized by UV-Visible and Photoluminescence (PL spectroscopy. Thick films of synthesized CdSnO3 powder fired at 850 0C are made by using screen printing method. The films surface is modified by using dipping method. CuCl2 (0.005 M dipped (for 2 min thick film shows high response (R= 477 to 100 ppm methanol at room temperature (35 0C. The sensor shows good selectivity and fast response recovery time to methanol. The excellent methanol sensing performance, particularly high response values is observed to be mainly due to porous CdSnO3 surface.

  6. Plasma kinetics and biodistribution of water-soluble CdTe quantum dots in mice: a comparison between Cd and Te

    International Nuclear Information System (INIS)

    Han Ying; Xie Guangyun; Sun Zhiwei; Mu Ying; Han Sihai; Xiao Yang; Liu Na; Wang Hui; Guo Caixia; Shi Zhixiong; Li Yanbo; Huang Peili

    2011-01-01

    Water-soluble quantum dots (QDs) have shown potential as tumor diagnostic agents. However, little is known about their biological behaviors in vivo. Male ICR mice were intravenously given a single dose (2.5 μmol kg −1 body weight) of water-soluble cadmium–telluride (CdTe) QDs (the QDs are approximately 4 nm in diameter and have maximal emission at 630 nm). Inductively coupled plasma mass spectrometry (ICP-MS) was used for measuring the kinetic action of 111 Cd and 125 Te for 7 days. The plasma kinetics of Cd and Te followed a two-compartment model, in which Cd exhibited greater apparent volume of distribution, greater clearance, faster distribution half-life, and significantly slower elimination half-life compared to Te. Contrary to its relatively transient fate in the plasma, high levels of Cd persisted in the liver and kidneys. Te accumulated primarily in the spleen. The different plasma kinetics and distribution patterns of Cd and Te imply that CdTe QDs have been part of the degradation or aggregation in vivo.

  7. Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

    2014-11-05

    Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

  8. Hyperfine and ion beam interaction studies of Sn, Te, I and Sm impurities in silicon

    International Nuclear Information System (INIS)

    Kemerink, G.J.

    1981-01-01

    In this thesis the author reports investigations on ion implanted and oven or laser annealed silicon using Moessbauer spectroscopy, Rutherford backscattering (RBS) and channeling, time differential perturbed angular correlation and the Hall-effect. Chapter 1 gives an introduction to this field of research. Chapter 2 deals with an outline of the experimental methods used throughout this work. In chapter 3 results are presented from RBS and channeling experiments on Te-implanted Si. Chapters 4 and 5 concern the results from a study of dopant dependent effects in laser annealed TeSi using 119 Sn, 125 Te and 129 I-Moessbauer spectroscopy. Chapter 6 gives the results from a study of as-implanted and oven annealed TeSi using 129 I-time differential perturbed angular correlation and 129 I-Moessbauer spectroscopy. Chapter 7 describes the results from RBS and channeling experiments on oven and laser annealed ISi. Chapter 8 deals with Hall-effect measurements on TeSi and ISi. Chapter 9 finally covers the investigations of 153 Sm-implanted diamond, Si, Ge and α-Sn using channeling and 153 Eu-Moessbauer spectroscopy. (Auth.)

  9. Study on the local stress induced dislocations on (1 bar 1 bar 1 bar) Te face of CdTe-based crystals

    Science.gov (United States)

    Fu, Xu; Xu, Yadong; Xu, Lingyan; Gu, Yaxu; Jia, Ningbo; Jie, Wanqi

    2017-11-01

    The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied experimentally. The extended dislocation patterns are formed around Te inclusions in both CdZnTe and CdTe crystals, owing to the build-in stress. Two mutually orthogonal tetrahedrons are observed in CdZnTe crystal. However, the ;double-arms; dislocation rosette pattern extended along 〈1 1 0〉 direction is observed in CdTe crystal. The Peierls kink pair mechanism and the Hirsch effects are used to explain the discrepancy of these two different rosette patterns. Similar dislocation rosette patterns are observed on indentation surface of CdZnTe crystal. The dislocation rosette patterns are found to be independent of the indenter orientation, but completely determined by the crystallographic properties of zinc-blende structure of the crystal. Furthermore, the Te(g) and Cd(g) dislocation arms are found to be mixed and bended with each other in CdTe crystal under high indentation stress, making it different from that generated around Te inclusions. A model concerning the comprehensive impact of stress field and electronic polarities dislocations is proposed to clarify the dislocation bending phenomenon.

  10. Highly fluorescent CdTe quantum dots with reduced cytotoxicity-A Robust biomarker

    Directory of Open Access Journals (Sweden)

    Jandi Kim

    2015-03-01

    Full Text Available l-Cysteine (Cys capped CdTe quantum dots (CdTe@Cys QDs were successfully synthesized in an aqueous medium. The synthesized CdTe@Cys samples were analyzed using Fourier transform infrared (FT-IR spectroscopy, fluorescence (FL spectroscopy, transmission electron microscopy (TEM, confocal microscopy and subsequently subjected to the antibacterial test. Systematic investigations were carried out for the determination of optimal conditions namely the ratios of Cd:Te, CdTe:Cys, pH value and the chemical stability of CdTe@Cys. Moreover, the reactivation of FL intensity in the CdTe@Cys sample was done easily by the addendum of Cys. The introduction of additional cysteine to the CdTe@Cys QDs sample showed an enhancement in terms of the FL intensity and stability along with the reduced antibacterial activity. This was further confirmed through Thiazolyl blue tetrazolium bromide (MTT assays. Both the result of the bio-stability tests namely the antibacterial test and MTT assay displayed similarities between the externally added Cys and cytotoxicity of the bacteria and human HeLa cancer cell lines. Confocal microscopic images were captured for the CdTe@Cys conjugated Escherichia coli.

  11. Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials

    Science.gov (United States)

    Ren, Zhifeng; Zhang, Qian; Chen, Gang

    2018-02-27

    A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 .mu.V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 .mu.V/K at any temperature.

  12. Quantum oscillation evidence for a topological semimetal phase in ZrSnTe

    Science.gov (United States)

    Hu, Jin; Zhu, Yanglin; Gui, Xin; Graf, David; Tang, Zhijie; Xie, Weiwei; Mao, Zhiqiang

    2018-04-01

    The layered WHM-type (W =Zr /Hf /La , H =Si /Ge /Sn /Sb , M =S /Se /Te ) materials represent a large family of topological semimetals, which provides an excellent platform to study the evolution of topological semimetal state with the fine tuning of spin-orbit coupling and structural dimensionality for various combinations of W , H , and M elements. In this work, through high field de Haas-van Alphen (dHvA) quantum oscillation studies, we have found evidence for the predicted topological nontrivial bands in ZrSnTe. Furthermore, from the angular dependence of quantum oscillation frequency, we have revealed the three-dimensional Fermi surface topologies of this layered material owing to strong interlayer coupling.

  13. Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

    Energy Technology Data Exchange (ETDEWEB)

    Baker, Jason; Kumar, Ravhi; Park, Changyong; Kenney-Benson, Curtis; Cornelius, Andrew; Velisavljevic, Nenad (CIW); (LANL); (UNLV)

    2017-10-30

    The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. Electrical resistance and relative changes to the thermal conductivity were also measured, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. The results demonstrate a fundamental relationship between structure and thermoelectric behaviours and suggest that pressure is an effective tool to control them.

  14. Quantum coherent transport in SnTe topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Assaf, B. A.; Heiman, D. [Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States); Katmis, F.; Moodera, J. S. [Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139 (United States); Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Wei, P. [Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Zhang, Z. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bennett, S. P.; Harris, V. G. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-09-08

    Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

  15. Design Strategies for High-Efficiency CdTe Solar Cells

    Science.gov (United States)

    Song, Tao

    With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations suggest that the (Mg,Zn)O alloy with 20% Mg, or a similar type-I heterojunction partner with moderate DeltaE C (e.g., Cd(S,O) or (Cd,Mg)Te with appropriate oxygen or magnesium ratios) should yield higher voltages and would therefore be better candidates for the CdTe-cell emitter. The CdTe/substrate interface is also of great importance, particularly in the growth of epitaxial

  16. ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS

    International Nuclear Information System (INIS)

    DE GERONIMO, G.; O CONNOR, P.; KANDASAMY, A.; GROSHOLZ, J.

    2002-01-01

    A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output baseline and high output driving capability. The general-purpose versions include programmable gain and peaking time. The read-out multichannel ASICs provide fully data driven high accuracy amplitude and time measurements, multiplexing and time domain derandomization of the shaped pulses. They implement a fast arbitration scheme and an array of innovative two-phase offset-free rail-to-rail analog peak detectors for buffering and absorption of input rate fluctuations, thus greatly relaxing the rate requirement on the external ADC. Pulse amplitude, hit timing, pulse risetime, and channel address per processed pulse are available at the output in correspondence of an external readout request. Prototype chips have been fabricated in 0.5 and 0.35 (micro)m CMOS and tested. Design concepts and experimental results are discussed

  17. Purification of CdZnTe by electromigration

    International Nuclear Information System (INIS)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-01-01

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10 −2  cm 2 /V, compared with that of 1.4 × 10 −3  cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation

  18. Purification of CdZnTe by electromigration

    Science.gov (United States)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-01

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10-2 cm2/V, compared with that of 1.4 × 10-3 cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  19. Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

    Science.gov (United States)

    Mostovyi, Andrii I.; Solovan, Mykhailo M.; Brus, Viktor V.; Pullerits, Toǧnu; Maryanchuk, Pavlo D.

    2018-01-01

    MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωṡcm, ρ2=10 Ωṡcm, ρ3=40 Ωṡcm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

  20. Cr 3d surface and bulk states in Sn1-xCrxTe/Cr crystals

    International Nuclear Information System (INIS)

    Guziewicz, E.; Szamota-Sadowska, K.; Kowalski, B.J.; Grodzicka, E.; Story, T.; Orlowski, B.A.; Johnson, R.L.

    1997-01-01

    We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn 0.97 Cr 0.03 Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transmission was used. The experiment was designed to follow the Sn 0.97 Cr 0.03 Te/Cr interface formation process. At the clean Sn 0.97 Cr 0.03 Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level also observed. (author)

  1. In-beam studies of {sup 98}Cd and {sup 102}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Lipoglavsek, M. [Uppsala Univ. (Sweden)]|[J. Stefan Institute, Ljubljana (Slovenia); Gorska, M.; Schubart, R. [GSI, Darmstadt (Germany)] [and others

    1996-12-31

    For the first time excited states of the neutron deficient nuclei {sup 98}Cd and {sup 102}Sn were identified using in-beam spectroscopy following fusion evaporation reactions. Half lives of long lived isomeric states in both nuclei were also measured. Due to very low cross sections for producing {sup 98}Cd and {sup 102}Sn with stable beams and targets, a special detector setup utilizing NORDBALL ancillary detectors and a recoil catcher device was used. High {gamma}-ray detection efficiency was achieved with two EUROBALL Ge cluster detectors.

  2. Photovoltaic efficiency of intermediate band solar cells based on CdTe/CdMnTe coupled quantum dots

    Science.gov (United States)

    Prado, Silvio J.; Marques, Gilmar E.; Alcalde, Augusto M.

    2017-11-01

    In this work we show the calculation of optimized efficiencies of intermediate band solar cells (IBSCs) based on Mn-doped II-VI CdTe/CdMnTe coupled quantum dot (QD) structures. We focus our attention on the combined effects of geometrical and Mn-doping parameters on optical properties and solar cell efficiency. In the framework of {k \\cdot p} theory, we accomplish detailed calculations of electronic structure, transition energies, optical selection rules and their corresponding intra- and interband oscillator strengths. With these results and by following the intermediate band model, we have developed a strategy which allows us to find optimal photovoltaic efficiency values. We also show that the effects of band admixture which can lead to degradation of optical transitions and reduction of efficiency can be partly minimized by a careful selection of the structural parameters and Mn-concentration. Thus, the improvement of band engineering is mandatory for any practical implementation of QD systems as IBSC hardware. Finally, our calculations show that it is possible to reach significant efficiency, up to  ∼26%, by selecting a restricted space of parameters such as quantum dot size and shape and Mn-concentration effects, to improve the modulation of optical absorption in the structures.

  3. Donor states in a semimagnetic Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well

    Science.gov (United States)

    Kalpana, Panneer Selvam; Nithiananthi, Perumal; Jayakumar, Kalyanasundaram

    2017-02-01

    The theoretical investigation has been carried out on the binding energy of donor associated with the electrons confined in a Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well (DQW) as a function of central barrier width for various well dimensions and impurity locations in the barrier and the well. The magnetic field can act as a tool to continuously change the interwell coupling inside this DQW systems and its effect on donor binding has also been studied. Moreover, the polaronic corrections, which is due to the strong exchange interaction between the magnetic moment of Mn2+ ion and the spin of the confined carrier, to the binding energy of the hydrogenic donor impurity has also been estimated with and without the application of magnetic field. The binding energy of the donor impurity is determined by solving the Schrodinger equation variationally in the effective mass approximation and the effect due to Bound Magnetic Polaron (BMP) is included using mean field theory with the modified Brillouin function. The results are reported and discussed.

  4. Photovoltaic efficiency of intermediate band solar cells based on CdTe/CdMnTe coupled quantum dots.

    Science.gov (United States)

    Prado, Silvio J; Marques, Gilmar E; Alcalde, Augusto M

    2017-11-08

    In this work we show the calculation of optimized efficiencies of intermediate band solar cells (IBSCs) based on Mn-doped II-VI CdTe/CdMnTe coupled quantum dot (QD) structures. We focus our attention on the combined effects of geometrical and Mn-doping parameters on optical properties and solar cell efficiency. In the framework of [Formula: see text] theory, we accomplish detailed calculations of electronic structure, transition energies, optical selection rules and their corresponding intra- and interband oscillator strengths. With these results and by following the intermediate band model, we have developed a strategy which allows us to find optimal photovoltaic efficiency values. We also show that the effects of band admixture which can lead to degradation of optical transitions and reduction of efficiency can be partly minimized by a careful selection of the structural parameters and Mn-concentration. Thus, the improvement of band engineering is mandatory for any practical implementation of QD systems as IBSC hardware. Finally, our calculations show that it is possible to reach significant efficiency, up to  ∼26%, by selecting a restricted space of parameters such as quantum dot size and shape and Mn-concentration effects, to improve the modulation of optical absorption in the structures.

  5. Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

    2009-05-01

    Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

  6. Magnetospectroscopy of double HgTe/CdHgTe quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Aleshkin, V. Ya.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France); Orlita, M.; Piot, B.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France); Mikhailov, N. N.; Dvoretskii, S. A. [Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.

  7. Determination of equilibrium phase composition in the Hg-HgTe-CdTe system by ''dew point'' method

    International Nuclear Information System (INIS)

    Vanyukov, A.V.; Krotov, I.I.; Ermakov, A.I.

    1978-01-01

    Using the ''dew point'' method a study has been made of the equilibrium composition of the solid and liquid phases in the Hg-HgTe-CdTe system at 404, 435 and 454 deg C. It has been pointed out that crystallization of cadmium-rich solid solutions of Cdsub(x)Hgsub(1-x) Te takes place from a liquid phase with a much higher concentration of Hg. The activity of Hg in the liquid phase increases along the liquidus isotherm in the direction from section Hg-HgTe to section HgCdTe in accordance with the increase of its concentration. An increase in activity of Hg in the solid phase of Cdsub(x)Hgsub(1-x)Te has been noted with the reduction of its concentration

  8. Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

    Science.gov (United States)

    Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

    2006-06-01

    The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

  9. DFT-derived reactive potentials for the simulation of activated processes: the case of CdTe and CdTe:S.

    Science.gov (United States)

    Hu, Xiao Liang; Ciaglia, Riccardo; Pietrucci, Fabio; Gallet, Grégoire A; Andreoni, Wanda

    2014-06-19

    We introduce a new ab initio derived reactive potential for the simulation of CdTe within density functional theory (DFT) and apply it to calculate both static and dynamical properties of a number of systems (bulk solid, defective structures, liquid, surfaces) at finite temperature. In particular, we also consider cases with low sulfur concentration (CdTe:S). The analysis of DFT and classical molecular dynamics (MD) simulations performed with the same protocol leads to stringent performance tests and to a detailed comparison of the two schemes. Metadynamics techniques are used to empower both Car-Parrinello and classical molecular dynamics for the simulation of activated processes. For the latter, we consider surface reconstruction and sulfur diffusion in the bulk. The same procedures are applied using previously proposed force fields for CdTe and CdTeS materials, thus allowing for a detailed comparison of the various schemes.

  10. Optimization of Monocrystalline MgxCd1-xTe/MgyCd1-yTe Double-Heterostructure Solar Cells

    Science.gov (United States)

    Becker, Jacob J.

    Polycrystalline CdS/CdTe solar cells continue to dominate the thin-film photovoltaics industry with an achieved record efficiency of over 22% demonstrated by First Solar, yet monocrystalline CdTe devices have received considerably less attention over the years. Monocrystalline CdTe double-heterostructure solar cells show great promise with respect to addressing the problem of low Voc with the passing of the 1 V benchmark. Rapid progress has been made in driving the efficiency in these devices ever closer to the record presently held by polycrystalline thin-films. This achievement is primarily due to the utilization of a remote p-n heterojunction in which the heavily doped contact materials, which are so problematic in terms of increasing non-radiative recombination inside the absorber, are moved outside of the CdTe double heterostructure with two MgyCd1-yTe barrier layers to provide confinement and passivation at the CdTe surfaces. Using this design, the pursuit and demonstration of efficiencies beyond 20% in CdTe solar cells is reported through the study and optimization of the structure barriers, contacts layers, and optical design. Further development of a wider bandgap MgxCd1-xTe solar cell based on the same design is included with the intention of applying this knowledge to the development of a tandem solar cell constructed on a silicon subcell. The exploration of different hole-contact materials--ZnTe, CuZnS, and a-Si:H--and their optimization is presented throughout the work. Devices utilizing a-Si:H hole contacts exhibit open-circuit voltages of up to 1.11 V, a maximum total-area efficiency of 18.5% measured under AM1.5G, and an active-area efficiency of 20.3% for CdTe absorber based devices. The achievement of voltages beyond 1.1V while still maintaining relatively high fill factors with no rollover, either before or after open-circuit, is a promising indicator that this approach can result in devices surpassing the 22% record set by polycrystalline

  11. Study of the thermoelectric properties of Pb{sub (1-x)} Sn{sub x} Te; Contribution a l'etude des proprietes thermoelectriques de solutions Pb{sub (1-x)}Sn{sub x} Te

    Energy Technology Data Exchange (ETDEWEB)

    Borde, D [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1967-04-15

    The present work concerns the study of the electrical properties (thermoelectric power, electrical resistivity and Hall coefficient) of PbTe and SnTe crystals and of solid polycrystalline solutions of Pb{sub 1-x} Sn{sub x} Te (0.1 < x < 0.6) between 80 and 800 deg. K. From the temperature dependence of these properties and the effect of the addition, it has been possible to characterize the semiconductor nature of these solutions, and to approach their band structure; in particular the forbidden gap behaviour in these solutions has been analyzed and evidence for the existence of a double valence band has been obtained. (author) [French] Le present travail est relatif a l'etude des proprietes electriques, en particulier du pouvoir thermoelectrique de la resistivite electrique et du coefficient de Hall, de cristaux PbTe et SnTe, et de solutions solides polycristallines Pb{sub 1-x} Sn{sub x} Te (0,1 {<=} x {<=} 0,6) entre 80 et 800 deg. K. La variation de ces proprietes avec la temperature, ainsi que l'effet de l'addition de Sn sur celles-ci, ont permis de preciser le caractere semiconducteur de ces solutions, et contribue a la determination de leur structure de bandes, en particulier le comportement de la bande interdite dans ces solutions a ete analyse et l'existence d'une double bande de valence mise en evidence. (auteur)

  12. Effect of magnetic field on the donor impurity in CdTe/Cd{sub 1-x}Mn{sub x}Te quantum well wire

    Energy Technology Data Exchange (ETDEWEB)

    Kalpana, P.; Nithiananthi, P.; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Nanostructure Lab, Department of Physics, Gandhigram Rural University, Gandhigram – 624 302, Tamilnadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai-600104, TamilNadu (India)

    2016-05-23

    The donor impurity binding energy in CdTe / Cd{sub 1-x}Mn{sub x}Te QWW with square well confinement along x – direction and parabolic confinement along y – direction under the influence of externally applied magnetic field has been computed using variational principle in the effective mass approximation. The spin polaronic shift has also been computed. The results are presented and discussed.

  13. Coulomb interaction of acceptors in Cd{sub 1−x}Mn{sub x}Te/CdTe quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

    2014-04-24

    The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1−x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

  14. Spectroscopic study on the doping of polycrystalline CdTe layers for solar cells; Spektroskopische Untersuchungen zur Dotierung von polykristallinen CdTe-Schichten fuer Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian

    2011-11-29

    First in the present thesis the fundamental properties of CdTe are described. In the following it is discussed, how a CdTe solar cell is generally constructed, which specialities are to be regarded, and how an improvement of the actually reachable data of such a solar cell in view of the efficiency can be reached fundamentally and in then practical realization. In the third chapter the physical foundations of the most important methods are discussed, which are applied in the framework of this thesis for the analysis of the CdTe layers. The fourth chapter describes the details of the experiments of this thesis. The fifth chapter deals with the analysis of the photoluminescence of CdTe layers. Special attention is put on the analysis of the excitonic luminescence. The sixth chapter treats the implantation of CdTe layers with phosphor. The influence of phosphorus as dopant on the PL spectra of CdTe and the correponding characteristics of implanted solar cells are presented. Also the influence of radiation damages as consequence of the ion implantation is studied in this chapter by means of the analysis of differently thick absorber layers. In the seventh chapter finally a new procedure for the fabrication of solar cells on the base of CdTe as absorber material is introduced, which shall make possible to change the stoichiometry of cadmium mand tellurium specifically and to present additionally a suited material, in order to form the doping of CdTE a solar-cell material variably. The fundamental properties of the new facility are experimentally determined, and first solar cells are fabricated with this facility and analyzed. Also an in-situ doping with phosphorus is thereby performed and the result studied.

  15. Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.; Abbas, Ali; Burst, James M.; Mahabaduge, Hasitha P.; Metzger, Wyatt K.; Walls, John M.; Lonergan, Mark C.; Barnes, Teresa M.; Wolden, Colin A.

    2016-12-01

    Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

  16. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

    International Nuclear Information System (INIS)

    Ricq, St.

    1999-01-01

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  17. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-01-01

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe

  18. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  19. Fabrication and characterization of Au/n-CdTe Schottky barrier under illumination and dark

    Science.gov (United States)

    Bera, Swades Ranjan; Saha, Satyajit

    2018-04-01

    CdTe nanoparticles have been grown by chemical reduction method using EDA as capping agent. These are used to fabricate Schottky barrier in a simple cost-effective way at room temperature. The grown nanoparticles are structurally characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM). The optical properties of nano CdTe is characterized by UV-Vis absorption spectra, PL spectra. The band gap of the CdTe nanoparticles is increased as compared to CdTe bulk form indicating there is blue shift. The increase of band gap is due to quantum confinement. Photoluminescence spectra shows peak which corresponds to emission from surface state. CdTe nanofilm is grown on ITO coated glass substrate by dipping it on toluene containing dispersed CdTe nanoparticles. Schottky barrier of Au/n-CdTe is fabricated on ITO coated glass by vacuum deposition of gold. I- V and C- V characteristics of Au/n-CdTe Schottky barrier junction have been studied under dark and light condition. It is found that these characteristics are influenced by surface or interface traps. The values of barrier height, ideality factor, donor concentration and series resistance are obtained from the reverse bias capacitance-voltage measurements.

  20. Performance updating of CdZnTe strip-drift detectors

    DEFF Research Database (Denmark)

    Shorohov, M.; Tsirkunova, I.; Loupilov, A.

    2007-01-01

    59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10 x 10 x 6 mm 3 produced by Yinnel Tech company. Results...

  1. Growth and characterization of Hg 1– Cd Te epitaxial films by ...

    Indian Academy of Sciences (India)

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

  2. Solution-processing of ultra-thin CdTe/ZnO nanocrystal solar cells

    International Nuclear Information System (INIS)

    MacDonald, Brandon I.; Gengenbach, Thomas R.; Watkins, Scott E.; Mulvaney, Paul; Jasieniak, Jacek J.

    2014-01-01

    We have carried out a detailed study into how modifications of the physical, chemical and optical properties of solution-processed, nanocrystalline CdTe layers influence the photovoltaic performance of sintered CdTe/ZnO nanocrystal solar cells. Such solar cells are fabricated through layer-by-layer assembly, which is enabled through an inter layer chemical and thermal treatment cycle. In this manner we are able to fabricate working solar cells with sintered CdTe layers as low as 90 nm, provided that grain size is precisely controlled. We show that the extent of grain growth achieved during the CdTe sintering process is strongly dependent on nanocrystal surface chemistry and chemical environment, with the removal of the organic capping ligands and the introduction of CdCl 2 prior to annealing leading to greatly enhanced growth. Due to the air processing involved and the nanocrystalline nature of the CdTe, the overall performance of these solar cells is shown to be strongly dependent on both annealing temperature and time, with optimal results requiring a balance between crystal growth and degradation due to oxidation. Using this simple bi-layer device structure, optimized treatment conditions result in power conversion efficiencies of up to 7.7% and peak internal quantum efficiencies in excess of 95%. - Highlights: • We study the growth of nanocrystalline CdTe thin films from colloidal nanocrystals. • We examine the CdTe growth profiles as a function of surface chemistry. • We show that nanocrystalline CdTe is susceptible to oxidation under air annealing. • We show how this oxidation influences performance in CdTe/ZnO solar cells. • We demonstrate CdTe/ZnO solar cells with an efficiency of 7.7% fabricated in air

  3. Enthalpy of mixing of Sn-Cd system using high temperature Calvet microcalorimeter

    International Nuclear Information System (INIS)

    Jayanthi, K.; Iyer, V.S.; Venugopal, V.

    1993-01-01

    The integral enthalpy of mixing of Sn + Cd alloys were determined at 690 K for mole fraction of cadmium (X Cd ) from 0.06 to 0.958. In the present study, the use of small quantities of metals and the determination of enthalpy of mixing of an endothermic reaction without stirring the bath solution. This was possible due to the high sensitivity of the Calvet calorimeter. (author). 3 refs., 3 tabs

  4. Kinetics of photo-activated charge carriers in Sn:CdS

    Energy Technology Data Exchange (ETDEWEB)

    Patidar, Manju Mishra, E-mail: manjumishra.iuc@gmail.com; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V. [UGC-DAE CSR, University Campus, Khandwa Road, Indore (M.P.)-452001 (India); Panda, Richa [S.S. Jain Subodh Girls College, Airport Road Sanganer, Jaipur - 302029 (India)

    2016-05-23

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd{sub 1-x}Sn{sub x}S (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ{sub 1}, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  5. Multichannel CdZnTe Gamma Ray Spectrometer

    International Nuclear Information System (INIS)

    Doty, F.P.; Lingren, C. L.; Apotovsky, B. A.; Brunsch, J.; Butler, J. F.; Collins, T.; Conwell, R.L.; Friesenhahn, S.; Gormley, J.; Pi, B.; Zhao, S.; Augustine, F.L.; Bennet, B. A.; Cross, E.; James, R. B.

    1998-01-01

    A 3 cm 3 multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV

  6. HgCdTe APDS for space applications

    Science.gov (United States)

    Rothman, Johan; de Broniol, Eric; Foubert, Kevin; Mollard, Laurent; Péré-Laperne, Nicolas; Salvetti, Frederic; Kerlain, Alexandre; Reibel, Yann

    2017-11-01

    HgCdTe avalanche photodiode focal plane arrays (FPAs) and single element detectors have been developed for a large scope of photon starved applications. The present communication present the characteristics of our most recent detector developments that opens the horizon for low infrared (IR) photon number detection with high information conservation for imaging, atmospheric lidar and free space telecommunications. In particular, we report on the performance of TEC cooled large area detectors with sensitive diameters ranging from 30- 200 μm, characterised by detector gains of 2- 20 V/μW and noise equivalent input power of 0.1-1 nW for bandwidths ranging from 20 to 400 MHz.

  7. Electronic structure of CdTe using GGA+USIC

    International Nuclear Information System (INIS)

    Menéndez-Proupin, E.; Amézaga, A.; Cruz Hernández, N.

    2014-01-01

    A simple method to obtain a gap-corrected band structure of cadmium telluride within density functional theory is presented. On-site Coulomb self-interaction-like correction potential has been applied to the 5p-shell of Te and the 4d-shell of Cd. The predicted physical properties are similar to or better than those obtained with hybrid functionals and at largely reduced computational cost. In addition to the corrected electronic structure, the lattice parameters and the bulk modulus are improved. The relative stabilities of the different phases (zincblende, wurtzite, rocksalt and cinnabar) are preserved. The formation energy of the cadmium vacancy remains close to the values obtained from hybrid functional calculations

  8. Properties of insulator interfaces with p-HgCdTe

    International Nuclear Information System (INIS)

    Schacham, S.E.; Finkman, E.

    1990-01-01

    Heat treatment at 70 degree C of low carrier concentration p-type HgCdTe samples (p 0 =8x10 14 cm -3 ) generates an inverted surface layer. A two day anneal process below 95 degree C did not affect the Hall coefficient, whereas an almost complete recovery was obtained by annealing at 120 degree C. While bulk electron mobility, obtained from PEM data, remained high (about 9x10 4 cm 2 /V s at 77 K), surface mobility is lower by more than an order of magnitude. Surface recombination velocity indicates a continuous improvement with increased temperature, and the activation energy remains equal to the vacancies energy level. The proposed mechanism is that of positive charges in the sulfide migrating towards the interface and generating an image inversion layer

  9. Large-Scale Surfactant-Free Synthesis of p-Type SnTe Nanoparticles for Thermoelectric Applications

    Directory of Open Access Journals (Sweden)

    Guang Han

    2017-02-01

    Full Text Available A facile one-pot aqueous solution method has been developed for the fast and straightforward synthesis of SnTe nanoparticles in more than ten gram quantities per batch. The synthesis involves boiling an alkaline Na2SnO2 solution and a NaHTe solution for short time scales, in which the NaOH concentration and reaction duration play vital roles in controlling the phase purity and particle size, respectively. Spark plasma sintering of the SnTe nanoparticles produces nanostructured compacts that have a comparable thermoelectric performance to bulk counterparts synthesised by more time- and energy-intensive methods. This approach, combining an energy-efficient, surfactant-free solution synthesis with spark plasma sintering, provides a simple, rapid, and inexpensive route to p-type SnTe nanostructured materials.

  10. Interface Properties and Surface Leakage of HgCdTe Photodiodes.

    Science.gov (United States)

    1980-01-01

    these techniques, we found that (a) the com- position of a 1200 )anodic film is 68% TeO2 , 27% CdO, and 6% HgO, and (b) the cations, especially the Hg...of TeO2 (Fig. 1); (b) irradiation with an electron beam of a few keV energy can convert the surface layer (10-100 1) of (Rg,Cd)Te into CdTe (Fig. 2...remove the scratches. The polishing cloth was secured to a glass olishing disk which is not affected by the corrosive nature of the etch - a 5

  11. Millimeter wave absorption by confined acoustic modes in CdSe/CdTe core-shell quantum dots

    International Nuclear Information System (INIS)

    Liu, T-M; Lu, J-Y; Kuo, C-C; Wen, Y-C; Lai, C-W; Yang, M-J; Chou, P-T; Murray, D B; Saviot, L; Sun, C-Kuang

    2007-01-01

    Taking advantage of the specific core-shell charge separation structure in the CdSe/CdTe core-shell Type-II quantum dots (QDs), we experimentally observed the resonant-enhanced dipolar interaction between millimeter-wave (MMW) photons and their corresponding (l = 1) confined acoustic phonons. With proper choice of size, the absorption band can be tuned to desired frequency of MMW imaging. Exploiting this characteristic absorption, in a fiber-scanned MMW imaging system, we demonstrated the feasibility of CdSe/CdTe QDs as the contrast agents of MMW imaging

  12. RF sputtered HgCdTe films for tandem cell applications

    International Nuclear Information System (INIS)

    Wang, S.L.; Lee, S.H.; Gupta, A.; Compaan, A.D.

    2004-01-01

    Polycrystalline Hg 1-x Cd x Te films were investigated for their potential as bottom cells of a CdTe-based tandem solar cell. The films were deposited by RF sputtering from a cold pressed target containing 30% HgTe+70% CdTe. The as-deposited films were highly resistive with (111) preferred orientation and a bandgap of ∝1.0 eV. Various thermal treatment schemes were investigated under different conditions of ambient and temperature to reduce the resistivity. The film properties were analyzed using infrared transmission spectra, energy dispersive X-ray spectra and X-ray diffraction. N doped p-HgCdTe films were also prepared by reactive sputtering in a N 2 /Ar ambient. P-n junction solar cells were fabricated with CdS films as the heterojunction partner. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Investigation of the chlorine A-Center in polycrystalline CdTe layers by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian; Metzner, Heiner; Haedrich, Mathias [Institut fuer Festkoerperphysik, Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Schley, Pascal [Institut fuer Physik, Technische Universitaet Ilmenau, 98684 Ilmenau (Germany); Goldhahn, Ruediger [Institut fuer Experimentelle Physik, Universitaet Magdeburg, 39016 Magdeburg (Germany)

    2012-07-01

    Polycrystalline CdTe is a well known absorber material for thin film solar cells. However, the improvement of CdTe-based solar cells for industrial application is mainly based on empirical enhancements of certain process steps which are not concerning the absorber itself. Hence, the defect structure of CdTe is still not understood in detail. One of the most discussed defects in CdTe is the so called chlorine A-center. In general, the A-Center describes a defect complex of the intrinsic cadmium vacancy defect and an extrinsic impurity. By means of photoluminescence spectroscopy at temperatures of 5 K we investigated the behavior of the chlorine A-center under different CdTe activation techniques. Therefore, we were able to determine the electronic level of that defect and to analyze its influence on the crystal quality and the functionality of solar cells that were prepared of the corresponding samples.

  14. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    International Nuclear Information System (INIS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-01-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

  15. Electronic tuning of the transport properties of off-stoichiometric PbxSn1−xTe thermoelectric alloys by Bi2Te3 doping

    International Nuclear Information System (INIS)

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-01-01

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb x Sn 1−x Te alloys by tuning of Bi 2 Te 3 doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb 0.5 Sn 0.5 Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected

  16. An ultrasensitive electrochemical biosensor for glucose using CdTe-CdS core-shell quantum dot as ultrafast electron transfer relay between graphene-gold nanocomposite and gold nanoparticle

    International Nuclear Information System (INIS)

    Gu Zhiguo; Yang Shuping; Li Zaijun; Sun Xiulan; Wang Guangli; Fang Yinjun; Liu Junkang

    2011-01-01

    Graphical abstract: We first reported an ultrasensitive electrochemical biosensor for glucose using CdTe-CdS core-shell quantum dot as ultrafast electron transfer relay between graphene-gold nanocomposite and gold nanoparticle. Since promising their electrocatalytic synergy towards glucose was achieved, the biosensor showed high sensitivity (5762.8 nA nM -1 cm -2 ), low detection limit (S/N = 3) (3 x 10 -12 M) and fast response time (0.045 s). - Abstract: The paper reported an ultrasensitive electrochemical biosensor for glucose which was based on CdTe-CdS core-shell quantum dot as ultrafast electron transfer relay between graphene-gold nanocomposite and gold nanoparticle. Since efficient electron transfer between glucose oxidase and the electrode was achieved, the biosensor showed high sensitivity (5762.8 nA nM -1 cm -2 ), low detection limit (S/N = 3) (3 x 10 -12 M), fast response time (0.045 s), wide calibration range (from 1 x 10 -11 M to 1 x 10 -8 M) and good long-term stability (26 weeks). The apparent Michaelis-Menten constant of the glucose oxidase on the medium, 5.24 x 10 -6 mM, indicates excellent bioelectrocatalytic activity of the immobilized enzyme towards glucose oxidation. Moreover, the effects of omitting graphene-gold nanocomposite, CdTe-CdS core-shell quantum dot and gold nanoparticle were also investigated. The result showed sensitivity of the biosensor is 7.67-fold better if graphene-gold nanocomposite, CdTe-CdS core-shell quantum dot and gold nanoparticle are used. This could be ascribed to improvement of the conductivity between graphene nanosheets due to introduction of gold nanoparticles, ultrafast charge transfer from CdTe-CdS core-shell quantum dot to graphene nanosheets and gold nanoparticle due to unique electrochemical properties of the CdTe-CdS core-shell quantum dot and good biocompatibility of gold nanoparticle for glucose oxidase. The biosensor is of best sensitivity in all glucose biosensors based on graphene nanomaterials up to

  17. An ultrasensitive electrochemical biosensor for glucose using CdTe-CdS core-shell quantum dot as ultrafast electron transfer relay between graphene-gold nanocomposite and gold nanoparticle

    Energy Technology Data Exchange (ETDEWEB)

    Gu Zhiguo; Yang Shuping [School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122 (China); Li Zaijun, E-mail: zaijunli@263.net [School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122 (China); Sun Xiulan [School of Food Science and Technology, Jiangnan University, Wuxi 214122 (China); Wang Guangli [School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122 (China); Fang Yinjun [Zhejiang Zanyu Technology Co., Ltd., Hangzhou 310009 (China); Liu Junkang [School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122 (China)

    2011-10-30

    Graphical abstract: We first reported an ultrasensitive electrochemical biosensor for glucose using CdTe-CdS core-shell quantum dot as ultrafast electron transfer relay between graphene-gold nanocomposite and gold nanoparticle. Since promising their electrocatalytic synergy towards glucose was achieved, the biosensor showed high sensitivity (5762.8 nA nM{sup -1} cm{sup -2}), low detection limit (S/N = 3) (3 x 10{sup -12} M) and fast response time (0.045 s). - Abstract: The paper reported an ultrasensitive electrochemical biosensor for glucose which was based on CdTe-CdS core-shell quantum dot as ultrafast electron transfer relay between graphene-gold nanocomposite and gold nanoparticle. Since efficient electron transfer between glucose oxidase and the electrode was achieved, the biosensor showed high sensitivity (5762.8 nA nM{sup -1} cm{sup -2}), low detection limit (S/N = 3) (3 x 10{sup -12} M), fast response time (0.045 s), wide calibration range (from 1 x 10{sup -11} M to 1 x 10{sup -8} M) and good long-term stability (26 weeks). The apparent Michaelis-Menten constant of the glucose oxidase on the medium, 5.24 x 10{sup -6} mM, indicates excellent bioelectrocatalytic activity of the immobilized enzyme towards glucose oxidation. Moreover, the effects of omitting graphene-gold nanocomposite, CdTe-CdS core-shell quantum dot and gold nanoparticle were also investigated. The result showed sensitivity of the biosensor is 7.67-fold better if graphene-gold nanocomposite, CdTe-CdS core-shell quantum dot and gold nanoparticle are used. This could be ascribed to improvement of the conductivity between graphene nanosheets due to introduction of gold nanoparticles, ultrafast charge transfer from CdTe-CdS core-shell quantum dot to graphene nanosheets and gold nanoparticle due to unique electrochemical properties of the CdTe-CdS core-shell quantum dot and good biocompatibility of gold nanoparticle for glucose oxidase. The biosensor is of best sensitivity in all glucose

  18. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    International Nuclear Information System (INIS)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

    2015-01-01

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd 2+ . Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals

  19. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  20. CdCl{sub 2} treatment related diffusion phenomena in Cd{sub 1−x}Zn{sub x}S/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Clayton, A. J.; Barrioz, V.; Lamb, D. A.; Irvine, S. J. C. [Centre for Solar Energy Research (CSER), Glyndŵr University, OpTIC, St. Asaph Business Park, St. Asaph LL17 0JD (United Kingdom); Taylor, A. A. [Physics Department, Durham University, Durham DH1 3LE (United Kingdom)

    2014-03-14

    Utilisation of wide bandgap Cd{sub 1−x}Zn{sub x}S alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd{sub 1−x}Zn{sub x}S through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl{sub 2} activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd{sub 1−x}Zn{sub x}S/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in different states of completion—fully processed (CdCl{sub 2} activated), annealed only (without CdCl{sub 2} activation), and a control (without CdCl{sub 2} activation or anneal)—revealed cation diffusion phenomena within the window layer, their effects closely coupled to the CdCl{sub 2} treatment. As a result, the initial Cd{sub 1−x}Zn{sub x}S/CdS bilayer structure was observed to unify into a single Cd{sub 1−x}Zn{sub x}S layer with an increased Cd/Zn atomic ratio; these changes defining the properties and performance of the Cd{sub 1−x}Zn{sub x}S/CdTe device.

  1. Synthesis and characterization of CdTe quantum dots by one-step method

    Directory of Open Access Journals (Sweden)

    H. Li

    2013-09-01

    Full Text Available L-Cysteine (Cys-capped CdTe quantum dots (QDs were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL quantum yield (QY of the obtained CdTe QDs have been systematically investigated. Experimental results indicated that green to red emitting CdTe QDs with maximum quantum yield of 19.4% can be prepared at pH 11.5 and n(Cd2+:n(Te2−:n(Cys = 1:0.07:2.0. X-Ray powder diffraction (XRD and transmission electron microscopy (TEM were used to characterize the crystal structure and shape of CdTe QDs. The results showed that the prepared CdTe QDs were of cubic zinc blend crystal structure in a sphere-like shape.DOI: http://dx.doi.org/10.4314/bcse.v27i3.7

  2. Reassignment of oxygen-related defects in CdTe and CdSe

    International Nuclear Information System (INIS)

    Bastin, Dirk

    2015-01-01

    This thesis reassigns the O_T_e-V_C_d complex in CdTe and the O_S_e-V_C_d complex in CdSe to a sulfur-dioxygen complex SO_2*, and the O_C_d defect in CdSe to a V_C_dH_2 complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν_1) and 1108.3 cm"-"1 (ν_2) previously assigned to an O_T_e-V_C_d complex are detected in CdTe single crystals doped with CdSO_4 powder. Five weaker additional absorption lines accompanying ν_1 and ν_2 could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO_2* having two configurations labeled ν_1 and ν_2. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν_1 and ν_2, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ_1), 1107.5 (γ_2), and 1126.3 cm"-"1 (γ_3) previously attributed to an O_S_e-V_C_d complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO_2* having three configurations γ_1, γ_2, and γ_3. IR absorption measurements with uniaxial stress applied to the CdSe crystal yield a monoclinic C_1_h symmetry for γ_1 and γ_2. The SO_2* complex is stable up to 600 C. This thesis assigns the ν-lines in

  3. RGDS-conjugated CdSeTe/CdS quantum dots as near-infrared fluorescent probe: preparation, characterization and bioapplication

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhenzhen; Zhang, Qiyi; Huang, Huaying; Ren, Changjing; Pan, Yujin; Wang, Qing; Zhao, Qiang, E-mail: Zhaoqiang@scu.edu.cn [Sichuan University, School of Chemical Engineering (China)

    2016-12-15

    In the experiments, high-quality, water-soluble and near-infrared (NIR)-emitting CdSeTe and CdSeTe/CdS quantum dots (QDs) were successfully prepared. The average size of CdSeTe⁄CdS QDs was 7.68 nm and CdSeTe QDs was 4.33 nm. Arginine-glycine-aspartic-serine acid (RGDS) peptides were linked to CdSeTe/CdS QDs by N-(3-(dimethylamino)propyl)-N′-ehtylcarbodiimide hydrochloride (EDC) and N′-hydroxysuccinimide (NHS). The prepared RGDS-tagged NIR CdSeTe/CdS QDs (denoted as RGDS-CdSeTe/CdS) had an average diameter of 24.83 nm and were used for cancer cell immunofluorescence imaging. The characteristics of RGDS-conjugated CdSeTe/CdS such as morphology, structure, spectra, stability, cytotoxicity, and near-infrared microscopic imaging were investigated in detail. HepG2 cells were incubated with the novel fluorescent probe (RGDS-CdSeTe/CdS), which realized immunofluorescence targeting and imaging. The results reported here open up new perspectives for integrin-targeted near-infrared imaging and may aid in tumor detection including imaging-guided surgery.

  4. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    International Nuclear Information System (INIS)

    Gross, Dieter Konrad Michael

    2013-01-01

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  5. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Dieter Konrad Michael

    2013-11-08

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  6. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Dieter Konrad Michael

    2013-11-08

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  7. Interface chemistry of CdZnTe films studied by a peel-off approach

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Jun; Xu, Haitao; Zhang, Yuelu; Ji, Huanhuan; Xu, Run, E-mail: runxu@staff.shu.edu.cn; Huang, Jian; Zhang, Jijun; Liang, Xiaoyan; Tang, Ke; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • A peel-off approach is adopted to study the interface chemistry of CdZnTe films. • A thick mixed interlayer above 84 nm is found at a low growth temperature of 200 °C. • A reaction-limited model is suggested to explain the formation of mixed interlayer. - Abstract: CdZnTe films with thickness above 50 μm were deposited at temperatures of 200–500 °C by Close Space Sublimation method. A peel-off approach has been adopted to study the interface chemistry of CdZnTe thick films. For all the CdZnTe films, the scanning electron microscopy images show the small and round-like grains formed at interface in contrast to the large ordered grains at surface. For CdZnTe films grown at a low substrate temperature of 200 °C, the interface layer between CdZnTe and substrate is mixed with Te and CdTe, as evidenced by X-ray diffraction, Raman and X-ray photoelectron spectroscopy results. The thickness of the interface layer can be estimated to be 84 nm by depth profile using X-ray photoelectron spectroscopy. In contrast, a thin interface layer less than 14 nm is found at a high substrate temperature of 500 °C. The limited reaction of Te{sub 2} and Cd (Zn) to CdZnTe at a low growth temperature is responsible for the formation of the thick interface layer and a slow deposition rate at the nucleation stage.

  8. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

    2015-01-01

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  9. Structural and optical properties of alloyed quaternary CdSeTeS core and CdSeTeS/ZnS core–shell quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan, E-mail: adegoke.sesan@mailbox.co.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Forbes, Patricia B.C., E-mail: patricia.forbes@up.ac.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

    2015-10-05

    Highlights: • Alloyed quaternary CdSeTeS core quantum dots (QDs) were synthesized. • Passivation was carried out using a ZnS shell. • Quaternary CdSeTeS core exhibited unique optical properties over CdSeTe/ZnS. • CdSeTeS can be employed as a useful alternative to core/shell QDs. - Abstract: Synthesis of fluorescent alloyed quantum dots (QDs) with unique optical properties suitable for a wide array of chemical, physical and biological applications is of research interest. In this work, highly luminescent and photostable alloyed quaternary CdSeTeS core QDs of two different sizes were fabricated via the organometallic hot-injection synthetic route. Characterization of the nanocrystals were performed using TEM, XRD, UV/vis and fluorescence spectrophotometric techniques. We have demonstrated in this work that the well fabricated alloyed quaternary CdSeTeS core QDs possess unique optical properties that are advantageous over conventional core/shell systems. Formation of the CdSeTeS/ZnS core/shell with the desired optical properties comes with a number of challenges, hence the advantages of the quaternary alloyed core over the core/shell QDs are (i) avoidance of the challenging process of determining the proper shell thickness which can provide the desired optical properties in the core/shell system and (ii) avoidance of the lattice-induced mismatch between the core and the shell material which can either lead to incomplete exciton confinement or dislocation at the core/shell interface.

  10. Optical properties and surface topography of CdCl2 activated CdTe thin films

    Science.gov (United States)

    Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

    2018-05-01

    The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

  11. Determination of Cr, Cd, Sn, and Pb in Selected Herbal Products Available in Philippine Markets

    Directory of Open Access Journals (Sweden)

    Joan S. De Vera

    2017-12-01

    Full Text Available The growing popularity of herbal products in the Philippines makes it imperative to monitor and ensure safety of consumers from metal contaminants. In this study, trace concentrations of Cr, Cd, Sn, and Pb in herbal products were simultaneously measured using a microwaveassisted digestion as sample pre-treatment and inductively coupled plasma mass spectrometry (ICP-MS for elemental detection. Using the optimized method, recoveries of ERM CD281, the primary cer t i f ied reference material (CRM used, were found to be between 80-89%, and the method detection limits (MDL for Cr, Cd, Sn, and Pb were 0.15, 0.07, 0.3, and 0.14 μg/L, respectively. The linear ranges for Cr and other elements (Cd, Sn, and Pb were 0.01-500 and 0.01-50 μg/L, respectively. All correlation coeff icients were 0.9999 or better. Most of the products tested had measurable trace metal concentrations, which were below the suggested maximum limits in herbal products. However, one product derived from mangosteen exceeded the limit for Cd (0.42 mg/kg. Subsequent analysis of metal content in tea infusions showed that only a small fraction of metals may leach out, suggesting that consumption of tea infusions pose lesser risks. The order of abundance of metals found in herbal products was Cr>Pb>Cd>Sn. The variability of metal concentrations in herbal products underlines the fact that many plant ingredients are susceptible to contamination, and quality control during processing must be improved to minimize the possibility of contamination. The results of this study suggest that vigilant monitoring of herbal products is imperative to avoid exposure to trace metal contamination.

  12. A method to eliminate wetting during the homogenization of HgCdTe

    Science.gov (United States)

    Su, Ching-Hua; Lehoczky, S. L.; Szofran, F. R.

    1986-01-01

    Adhesion of HgCdTe samples to fused silica ampoule walls, or 'wetting', during the homogenization process was eliminated by adopting a slower heating rate. The idea is to decrease Cd activity in the sample so as to reduce the rate of reaction between Cd and the silica wall.

  13. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

    2014-10-25

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  14. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

    2015-01-01

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  15. Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies

    Energy Technology Data Exchange (ETDEWEB)

    Jaramillo Gómez, J.A. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico); Casas Espinola, J.L., E-mail: jlcasas@esfm.ipn.mx [ESFM – Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Douda, J. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)

    2014-11-15

    The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) in nonconjugated states and after the conjugation to the anti-papilloma virus antibodies (Ab). The Raman scattering study has shown that the CdSeTe core includes two layers with different material compositions such as: CdSe{sub 0.5}Te{sub 0.5} and CdSe{sub 0.7}Te{sub 0.3}. PL spectra of nonconjugated CdSeTe/ZnS QDs are characterized by two Gaussian shape PL bands related to exciton emission in the CdSeTe core and in intermediate layer at the core/shell interface. PL spectra of bioconjugated QDs have changed essentially: the main PL band related to the core emission shifts into high energy and become asymmetric. The energy diagram of double core/shell CdSeTe/ZnS QDs has been analyzed to explain the PL spectrum of nonconjugated QDs and its transformation at the bioconjugation to the papiloma virus antibodies. It is shown that the PL spectrum transformation in bioconjugated QDs can be a powerful technique for biology and medicine.

  16. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil.

    Science.gov (United States)

    Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R; Buecheler, Stephan; Tiwari, Ayodhya N

    2013-01-01

    Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

  17. Polarization effect of CdZnTe imaging detector based on high energy γ source

    International Nuclear Information System (INIS)

    Li Miao; Xiao Shali; Wang Xi; Shen Min; Zhang Liuqiang; Cao Yulin; Chen Yuxiao

    2011-01-01

    The inner electric potential distribution of CdZnTe detector was derived by applying poisson equation with the first type boundary condition, and the polarization effect of CdZnTe pixellated detector for imaging 137 Cs γ source was investigated. The results of numerical calculation and experiment indicate that electric potential distribution is mainly influenced by applied bias for low charge density in CdZnTe crystal and, in turn, there is linear relationship between electric potential distribution and applied bias that induces uniform electric field under low irradiated flux. However, the electric potential appears polarization phenomenon, and the electric field in CdZnTe crystal is distorted when CdZnTe detector is under high irradiated flux. Consequently, charge carriers in CdZnTe crystal drift towards the edge pixels of irradiated region, and hence, the shut-off central pixels are surrounded by a ring of low counting pixels. The polarization effect indeed deteriorates the performance of CdZnTe detector severely and the event counts of edge pixels for irradiated region reduce about 70%. (authors)

  18. CdZnTe background measurements at balloon altitudes with PoRTIA

    International Nuclear Information System (INIS)

    Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C.M.; Tueller, J.; Teegarden, B.

    2004-01-01

    Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS NaI anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of NaI. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coaxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn, and Te nuclei that radiatively decay; calculations are presented to determine the relative contribution of these decays to the fully shielded CdZnTe background measured by PoRTIA

  19. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2012-07-01

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  20. Recent progress in MBE grown HgCdTe materials and devices at UWA

    Science.gov (United States)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  1. Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

    Science.gov (United States)

    Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

    2016-05-01

    At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  2. Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

    Science.gov (United States)

    Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

    2018-05-01

    CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

  3. Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2014-07-15

    The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. ZnS-Passivated CdSe/CdS Co-sensitized Mesoporous Zn2SnO4 Based Solar Cells

    International Nuclear Information System (INIS)

    Kim, Kyungho; Park, Ji Eun; Park, Eun Su; Park, Yun Chang; Kim, Joosun; Im, Chan; Lee, Man-Jong

    2014-01-01

    Graphical abstract: - Highlights: • Mesoporous Zn 2 SnO 4 sensitized by CdSe/CdS QDs were synthesized via a two-step sequential process. • Assembled QDs were characterized by HRTEM and STEM mapping. • Efficiency increase in CdSe/CdS co-sensitized Zn 2 SnO 4 DSSCs is discussed. • The role of ZnS passivation layer is discussed by impedance spectroscopy. - Abstract: CdS and CdSe/CdS quantum dot (QD) sensitizers were assembled onto mesoporous ternary Zn 2 SnO 4 photoanodes using a two-step sequential process of successive ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD) for QD-cosensitized solar cell applications. The assembled CdS and CdSe QDs were observed using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), high-resolution TEM (HRTEM), and STEM/energy-dispersive X-ray spectroscopy (EDS) elemental mapping. CdSe/CdS cosensitized Zn 2 SnO 4 -based cells showed a higher absorption onset position, a stepwise band-edge level alignment, and, thereby, an improved power conversion efficiency (PCE) of 1.628% under one-sun conditions, which is the best result obtained using mesoporous Zn 2 SnO 4 reported to date. In addition, the effect of a ZnS passivation layer on the photovoltaic performance and aging behavior has been investigated. Electrochemical impedance spectroscopy (EIS) showed that the main role of the ZnS layer is to enhance the aging behavior of the CdSe/CdS/Zn 2 SnO 4 cells by improving the electron lifetime and charge recombination

  5. Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

    2013-10-15

    Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

  6. Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

    Science.gov (United States)

    Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

    2017-06-01

    In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

  7. Study of CdTe/CdS solar cell at low power density for low-illumination applications

    Energy Technology Data Exchange (ETDEWEB)

    Devi, Nisha, E-mail: nishatanwer1989@gmail.com; Aziz, Anver, E-mail: aaziz@jmi.ac.in [Department Of Physics, Solar PV Lab, Jamia Millia Islamia, New Delhi-110025 (India); Datta, Shouvik [Department of Physics, IISER-Pune, Dr.homi Bhabha road, Pashan, Pune-411008 (India)

    2016-05-06

    In this paper, we numerically investigate CdTe/CdS PV cell properties using a simulation program Solar Cell Capacitance Simulator in 1D (SCAPS-1D). A simple structure of CdTe PV cell has been optimized to study the effect of temperature, absorber thickness and work function at very low incident power. Objective of this research paper is to build an efficient and cost effective solar cell for portable electronic devices such as portable computers and cell phones that work at low incident power because most of such devices work at diffused and reflected sunlight. In this report, we simulated a simple CdTe PV cell at very low incident power, which gives good efficiency.

  8. Study of CdTe/CdS solar cell at low power density for low-illumination applications

    International Nuclear Information System (INIS)

    Devi, Nisha; Aziz, Anver; Datta, Shouvik

    2016-01-01

    In this paper, we numerically investigate CdTe/CdS PV cell properties using a simulation program Solar Cell Capacitance Simulator in 1D (SCAPS-1D). A simple structure of CdTe PV cell has been optimized to study the effect of temperature, absorber thickness and work function at very low incident power. Objective of this research paper is to build an efficient and cost effective solar cell for portable electronic devices such as portable computers and cell phones that work at low incident power because most of such devices work at diffused and reflected sunlight. In this report, we simulated a simple CdTe PV cell at very low incident power, which gives good efficiency.

  9. Characterization of point defects in CdTe by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

    2016-06-13

    Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

  10. A study of Sn addition on bonding arrangement of Se-Te alloys using far infrared transmission spectroscopy

    International Nuclear Information System (INIS)

    Kumar, Rajneesh; Rangra, V. S.; Sharma, Parikshit; Katyal, S. C.; Sharma, Pankaj

    2011-01-01

    Far infrared transmission spectra of Se 92 Te 8-x Sn x (x = 0, 1, 2, 3, 4, 5) glassy alloys are obtained in the spectral range 50-600 cm -1 at room temperature. The results are interpreted in terms of the vibrations of the isolated molecular units in such a way so as to preserve fourfold and twofold coordination for Sn and chalcogen atoms (Se,Te), respectively. With the addition of Sn, Far-IR spectra shift toward high frequency side and some new bands start appearing. Sn atoms appear to substitute for the selenium atoms in the outrigger sites due to large bond formation probability. Theoretical calculations of bond energy, relative probability of bond formation, force constant, and wave number were also made to justify the result.

  11. Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy

    International Nuclear Information System (INIS)

    Lao, Yan-Feng; Unil Perera, A. G.; Wijewarnasuriya, Priyalal S.

    2014-01-01

    We report a study of internal photoemission spectroscopy (IPE) applied to a n-type Hg 1−x Cd x Te/Hg 1−y Cd y Te heterojunction. An exponential line-shape of the absorption tail in HgCdTe is identified by IPE fittings of the near-threshold quantum yield spectra. The reduction of quantum yield (at higher photon energy) below the fitting value is explained as a result of carrier-phonon scatterings. In addition, the obtained bias independence of the IPE threshold indicates a negligible electron barrier at the heterojunction interface

  12. Thrombus detection using 125I-fibrinogen and a CdTe probe

    International Nuclear Information System (INIS)

    Garcia, D.A.; Frisbie, J.H.; Tow, D.E.; Sasahara, A.A.; Entine, G.

    1976-01-01

    A compact CdTe detector system was developed for use in a clinical screening test for venous thrombosis of the legs. Patients given intravenously administered autologous 125 I-fibrinogen were probed externally at selected points on the thighs and calves for abnormal accumulations of radioactivity. Measurements made with the CdTe probe were compared to those obtained with a standard portable NaI detector system. The CdTe probe was the equal of the NaI detector in diagnostic capability. The compact design of the semiconductor system considerably eased the probing procedure, especially in bedridden patients with limited mobility of the extremities

  13. Lattice parameter values and phase transitions for the Cu2Cd1-zMnzSnSe4 and Cu2Cd1-zFezSnSe4 alloys

    International Nuclear Information System (INIS)

    Moreno, E.; Quintero, M.; Morocoima, M.; Quintero, E.; Grima, P.; Tovar, R.; Bocaranda, P.; Delgado, G.E.; Contreras, J.E.; Mora, A.E.; Briceno, J.M.; Avila Godoy, R.; Fernandez, J.L.; Henao, J.A.; Macias, M.A.

    2009-01-01

    X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu 2 Cd 1-z Mn z SnSe 4 and Cu 2 Cd 1-z Fe z SnSe 4 alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. For Cu 2 Cd 0.8 Fe 0.2 SnSe 4 as well as for Cu 2 Cd 0.2 Fe 0.8 SnSe 4 the crystal structures were refined using the Rietveld method. It was found that the internal distortion parameter σ decreases as Cd is replaced by either Mn and/or Fe. For the Cu 2 Cd 1-z Mn z SnSe 4 and Cu 2 Cd 1-z Fe z SnSe 4 alloy systems, only two single solid phase fields, the tetragonal stannite α(I4-bar2m) and the wurtz-stannite δ (Pmn2 1 ) structures were found to occur in the diagram. In addition to the tetragonal stannite α phase extra X-ray diffraction lines due to MnSe and/or FeSe 2 were observed for as grown samples in the range 0.7 < z < 1.0. However, it was found that the amount of the extra phase decreased for the compressed samples.

  14. Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

    Directory of Open Access Journals (Sweden)

    Hua Guo

    2014-05-01

    Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

  15. Vibrational properties of homopolar and heteropolar surfaces and interfaces of the CdTe/HgTe system

    International Nuclear Information System (INIS)

    Rey Gonzalez, R.; Camacho B, A.; Quiroga, L.

    1993-08-01

    We present results of calculations for the density of vibrational modes for (001) and (111) homopolar, as well as for (011) heteropolar free surfaces of CdTe and HgTe. A rigid-ion model with a dynamical matrix parametrization including force constants up to second neighbours is used. We report on the existence of highly localized surface resonant modes at the top of the acoustic branch for CdTe and the bottom of the optical branch for HgTe. A different behaviour in the three directions analysed is found. The interface atomic planes show themselves as phonon gapless layers. The contribution of in-plane and out-of-plane vibration is analysed for both the surface and interface cases. (author). 7 refs, 7 figs

  16. Determination of a natural valence-band offset - The case of HgTe and CdTe

    Science.gov (United States)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  17. First-principles-based analysis of the influence of Cu on CdTe electronic properties

    International Nuclear Information System (INIS)

    Krasikov, D.; Knizhnik, A.; Potapkin, B.; Selezneva, S.; Sommerer, T.

    2013-01-01

    The maximum voltage of CdTe solar cells is limited by low majority carrier concentration and doping difficulty. Copper that enters from the back contact can form both donors and acceptors in CdTe. It is empirically known that the free carrier concentration is several orders lower than the total Cu concentration. Simplified thermodynamic models of defect compensation after Cu introduction can be found in literature. We present a first-principles-based analysis of kinetics of defect formation upon Cu introduction, and show that Cu i is mobile at room temperature. Calculations of properties of Cu i –V Cd and Cu i –Cu Cd complexes show that the neutral Cu i –Cu Cd complex is mobile at elevated temperatures, while formation of the V Cd –Cu i complex is unlikely because it transforms into the Cu Cd defect. - Highlights: ► First-principles calculations of copper defects in CdTe are performed. ► Formation of Cd vacancy + Cu interstitial(Cu i ) complex is unlikely. ► Cu i defect is mobile at room temperature. ► Cu i + Cu on Cd-site (Cu Cd ) complex is mobile at elevated temperature. ► Cu Cd defect forms by kicking-out of the regular lattice Cd by Cu i

  18. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  19. Can graphene make better HgCdTe infrared detectors?

    Directory of Open Access Journals (Sweden)

    Shi Yanli

    2011-01-01

    Full Text Available Abstract We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.

  20. Medipix2 based CdTe microprobe for dental imaging

    International Nuclear Information System (INIS)

    Vykydal, Z; Jakubek, J; Fauler, A; Fiederle, M; Zwerger, A; Svestkova, M

    2011-01-01

    Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

  1. Band-edge photoluminescence in CdTe

    International Nuclear Information System (INIS)

    Horodysky, P.; Grill, R.; Hlidek, P.

    2006-01-01

    Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. CdTe reflection anisotropy line shape fitting

    International Nuclear Information System (INIS)

    Molina-Contreras, J.R.

    2010-01-01

    In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E 1 and E 1 + Δ 1 transition region in II-VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.

  3. Ion implantation of CdTe single crystals

    International Nuclear Information System (INIS)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2017-01-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  4. Impedance spectroscopy of CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Weiss, Charlotte; Heisler, Christoph; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2012-07-01

    Impedance Spectroscopy (IS) is a widely used method to analyze dielectric properties of specimen as a function of frequency. Typically this characterization method delivers an equivalent circuit diagram of the device under examination to describe its electrical properties. Traditionally IS is used in coating evaluation, corrosion monitoring and in electrochemistry. During the last years the method became more important also in the field of electrical characterization of solar cells. In our work we use IS for the electrical characterization of thin film CdTe solar cells. The measurement is done at room temperature without illumination in a frequency domain from 20 Hz to 2 MHz. The samples are measured under variable forward bias. The results match insufficiently with the model of two resistor-capacitor circuits in series which is commonly used to describe the p-n junction and the blocking back contact. For better consistency, other models from the literature are used and discussed. From the results a conclusion is drawn about the properties of the solar cell such as the nature of the p-n junction or the performance of the back contact.

  5. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    International Nuclear Information System (INIS)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

    2014-01-01

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  6. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

    2014-06-23

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  7. Effect of the value of bond energy on the defect formation in the samples of CdTe - HqTe system under the influence of irradiation

    International Nuclear Information System (INIS)

    Kramchenko, O.A.; Pashkovskij, N.V.

    1984-01-01

    The bonds break energy in solid solutions of the CdTe-HgTe system is calculated. The correctness of the statement that bonds strength in a chemical compound, particularly for the CdTe-HgTe system with decreases with the increase of atomic number. It is shown that in the process of transition from CdTe binary compound to solid solutions of the CdTe-HgTe system a part of Cd atoms is substituted by Hg atoms, which causes relative decrease of the number Cd-Te bonds. At the same time increased is the number of Cd-Te bonds which during irradiation break more probably than the Cd-Te bonds forming however only Frenkel close vapours annihilating during irradiation. During the experiment these defects lead to temperature region washout in which properties reconstruction at isochronous annealing begins. The beginning of annealing is shifted towards higher temperatures which has been observed in the course of investigation. X decrease for the Cdsub(x)Hgsub(1-x)Te solid solution increases the annealing temperature of radiation defects The results of theoretical calculations coincide with the experimental data and permit to confirm that the properties changes arising during irradiation of matters with weak chemical bonds can be conserved only at very low temperatures

  8. [Preparation and spectral characterization of CdS(y)Te(1-y) thin films].

    Science.gov (United States)

    Li, Wei; Feng, Liang-Huan; Wu, Li-Li; Zhang, Jing-Quan; Li, Bing; Lei, Zhi; Cai, Ya-Ping; Zheng, Jia-Gui; Cai, Wei; Zhang, Dong-Min

    2008-03-01

    CdS(y)Te(1-y) (0 co-evaporation of powders of CdTe and CdS. For the characterization of the structure and composition of the CdS(y)Te(1-y) thin films the X-ray diffraction (XRD) and energy-dispersive spectroscopy (EDS) were used. The results indicate that the values of sulfur content y detected and controlled by the quartz wafer detector show good agreement with the EDS results. The films were found to be cubic for x or = 0.3. The 20-50 nm of grain sizes for CdS(y)Te(1-y) thin films were calculated using a method of XRD analysis. Finally, the optical properties of CdS(y)Te(1-y) thin films were characterized by UV-Vis-NIR spectroscopy alone. According to a method from Swanepoel, together with the first-order Sellmeier model, the thickness, of d-535 nm, energy gap of E(g)-1.41 eV, absorption coefficient, alpha(lambda) and refractive index, n(lambda) of CdS(0.22) Te(0.78) thin films were determined from the transmittance at normal incidence of light in the wavelength range 300-2 500 nm. The results also indicate that the CdS(y)Te(1-y) thin films with any composition (0 co-evaporation, and the method to characterize the optical properties of CdS(y)Te(1-y) thin films can be implemented for other semiconductor thin films.

  9. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  10. FP-LAPW Calculations of the EFG at Cd Impurities in Rutile SnO2

    International Nuclear Information System (INIS)

    Errico, L. A.; Fabricius, G.; Renteria, M.

    2001-01-01

    We report an ab initio study of the electric-field gradient (EFG) at Cd impurities located at the cation site in the semiconductor SnO 2 (rutile phase). The study was performed with the WIEN97 implementation of the FP-LAPW method. In order to simulate the diluted Cd-impurity in the SnO 2 host and to calculate the electronic structure of the system we used a 72-atoms super-cell, studying the relaxation introduced by the impurity in the lattice. The free-relaxation process performed shows that the relaxations of the oxygen nearest-neighbors of the impurity are not isotropic. Our prediction for the EFG tensor are compared with experimental results and point-charge model predictions

  11. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    International Nuclear Information System (INIS)

    Mayo, B.

    1998-01-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350C and completely recrystallized after the same treatment at 400C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures

  12. Development of Buffer Layer Technologies for LWIR and VLWIR HgCdTe Integration on Si

    National Research Council Canada - National Science Library

    Golding, Terry D

    2005-01-01

    This program proposed to develop manufacturable, cost-effective buffer layer technologies that would allow either hybrid or monolithic integration of LWIR and VLWIR HgCdTe infrared focal plane arrays...

  13. The next generation CdTe technology- Substrate foil based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, Chris [Univ. of South Florida, Tampa, FL (United States)

    2017-03-22

    The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal of this project) a roll-to-toll high throughput technology could be developed.

  14. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  15. CdTeO3 Deposited Mesoporous NiO Photocathode for a Solar Cell

    Directory of Open Access Journals (Sweden)

    Chuan Zhao

    2014-01-01

    Full Text Available Semiconductor sensitized NiO photocathodes have been fabricated by successive ionic layer adsorption and reaction (SILAR method depositing CdTeO3 quantum dots onto mesoscopic NiO films. A solar cell using CdTeO3 deposited NiO mesoporous photocathode has been fabricated. It yields a photovoltage of 103.7 mV and a short-circuit current density of 0.364 mA/cm2. The incident photon to current conversion efficiency (IPCE value is found to be 12% for the newly designed NiO/CdTeO3 solar cell. It shows that the p-type NiO/CdTeO3 structure could be successfully utilized to fabricate p-type solar cell.

  16. Se-Se isoelectronic centers in high purity CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

    2010-06-15

    We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

    Directory of Open Access Journals (Sweden)

    Ghasem Rezanejade Bardajee

    2013-01-01

    Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

  18. Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

    Science.gov (United States)

    Madejczyk, Paweł; Kębłowski, Artur; Gawron, Waldemar; Martyniuk, Piotr; Kopytko, Małgorzata; Stępień, Dawid; Rutkowski, Jarosław; Piotrowski, Józef; Piotrowski, Adam; Rogalski, Antoni

    2017-09-01

    We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.

  19. Performance simulation and structure design of Binode CdZnTe gamma-ray detector

    International Nuclear Information System (INIS)

    Niu Libo; Li Yulan; Fu Jianqiang; Jiang Hao; Zhang Lan; He Bin; Li Yuanjing

    2014-01-01

    A new electrode structure CdZnTe (Cadmium Zinc Telluride) detector named Binode CdZnTe has been pro- posed in this paper. Together with the softwares of MAXWELL, GEANT4, and ROOT, the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized. In order to improve its performance further, Compton scattering effect correction has been used. The simulation results demonstrate that with refined design and Compton scattering effect correction, Binode CdZnTe detectors is capable of achieving 3.92% FWHM at 122 keV, and 1.27% FWHM at 662 keV. Com- pared with other single-polarity (electron-only) detector configurations, Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution. (authors)

  20. Development of an integrated response generator for Si/CdTe semiconductor Compton cameras

    International Nuclear Information System (INIS)

    Odaka, Hirokazu; Sugimoto, Soichiro; Ishikawa, Shin-nosuke; Katsuta, Junichiro; Koseki, Yuu; Fukuyama, Taro; Saito, Shinya; Sato, Rie; Sato, Goro; Watanabe, Shin

    2010-01-01

    We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.

  1. Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity

    International Nuclear Information System (INIS)

    Nelson, A.J.

    1995-01-01

    Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics

  2. Nonlinear Absorptions of CdSeTe Quantum Dots under Ultrafast Laser Radiation

    Directory of Open Access Journals (Sweden)

    Zhijun Chai

    2016-01-01

    Full Text Available The oil-soluble alloyed CdSeTe quantum dots (QDs are prepared by the electrostatic method. The basic properties of synthesized CdSeTe QDs are characterized by UV-Vis absorption spectroscopy, photoluminescence spectroscopy, inductively coupled plasma mass spectrometry, and transmission electron microscope. The off-resonant nonlinear optical properties of CdSeTe QDs are studied by femtosecond Z-scan at 1 kHz (low-repetition rate and 84 MHz (high-repetition rate. Nonlinear absorption coefficients are calculated under different femtosecond laser excitations. Due to the long luminescent lifetime of CdSeTe QDs, under the conditions of high-repetition rate, for open-aperture curve, heat accumulation and bleaching of ground state are responsible for the decrease of two-photon absorption (TPA coefficient.

  3. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  4. Formation Dirac point and the topological surface states for HgCdTe-QW and mixed 3D HgCdTe TI

    International Nuclear Information System (INIS)

    Marchewka, Michał

    2017-01-01

    In this paper the results of numerical calculations based on the finite difference method (FDM) for the 2D and 3D TI with and without uniaxial tensile strain for mixed Hg_1_-_xCd_xTe structures are presented. The numerical calculations were made using the 8×8 model for x from 0 up to 0.155 and for the wide range for the thickness from a few nm for 2D up to 150 nm for 3D TI as well as for different mismatch of the lattice constant and different barrier potential in the case of the QW. For the investigated region of the Cd composition (x value) the negative energy gap (E_g=Γ_8-Γ_6) in the Hg_1_-_xCd_xTe is smaller than in the case of pure HgTe which, as it turns out, has a significant influence on the topological surface states (TSS) and the position of the Dirac point for QW as well as for 3D TI. The results show that the strained gap and the position of the Dirac point against the Γ_8 is a function of the x-Cd compounds in the case of the 3D TI as well as the critical width of the mixed Hg_1_-_xCd_xTe QW.

  5. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

    2014-04-01

    CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

  6. Beta decays of 126Cd and 126In to levels in 126In and 126Sn

    International Nuclear Information System (INIS)

    Gartner, M.L.

    1979-01-01

    A study of the beta decays of 126 Cd and 126 In using the TRISTAN on-line isotope separator facility is reported. Gamma-ray singles measurements were made for both decays usng Ge(Li) and LEPS (low energy photon spectrometer) detectors. In addition, gamma--gamma coincidence measurements and gamma multiscale measurements were made for both decays using Ge(Li) detectors. The half-life for 126 Cd was determined to be 0.506 +- 0.015 sec., and the half-lives for the low- and high-spin 126 In isomers were determined to be 1.83 +- 0.11 sec. and 1.96 +- 0.10 sec., respectively. A total of 11 gamma rays were observed in the decay of 126 Cd, and all but one were placed in a level scheme for 126 In. A total of 48 gamma rays were observed in the decay of the low- and high-spin 126 In isomers and all were placed in a level scheme for 126 Sn. Spin and parity assignments were deduced, whenever possible, on the basis of logft values and gamma decay selection rules. The 126 In decay schemes (one has been proposed for each isomer) are compared with earlier decay studies and with results from 124 Sn(t,p) 126 Sn reaction experiments. The systematics associated with the level schemes are discussed and a comparison is made with the nuclear shell model. 49 references

  7. Investigations of portable cadmium telluride (CdTe(Cl)) detectors for clinical studies with radioactive indicators

    International Nuclear Information System (INIS)

    Bojsen, J.

    1985-01-01

    The combination of small, portable γ-radiation-sensitive Cadmium Telluride (CdTE(Cl)) crystal detectors and portable solid state data storage memories makes it feasible to extend the measuring period in a number of clinical investigations based on the use of various radioisotopes and external detection. Blood sampling can be avoided in some cases. Continuous ambulatory monitoring of relevant physiological parameters is practicable, e.g. kidney function (GFR), left ventricular ejection fraction, subcutaneous blood flow, muscle blood flow and insulin absorption in diabetic patients. In the present methodological study the applicability of the 133-Xe washout technique to subcutaneous (s.c.) adipose tissue blood flow (SBF) has been investigated and adapted to the use of CdTe(Cl) detectors attached to the skin surface for the measurement of local 133-Xe-disappearance rate constants (k). Physical characterization of CdTe(Cl) detectors as γ-sensitive devices has been performed, and adequate counting sensitivities were found without detector energy-resolution properties. The CdTe(Cl) detectors are therefore suitable for single indicator studies. The measuring geometry of CdTe(Cl) detectors was studied and compared with that of stationary Sodium Iodide (NaI(Tl)) detectors in both phantom and in vivo investigations. The spatial properties of CdTe(Cl) detectors could to some extent be adjusted by pulse height discrimination and lead collimation. When long-term measurements were complicated by for instance physical activity of the patients, the small CdTe(Cl) detectors in general showed equal or better performance than the heavy and voluminous NaI(Tl) detectors. The free movement of the ambulatory patient and the avoidance of cable connections to stationary data-collecting systems gave improved possibilities for measurements of the relevant parameters. From this point of view, portable CdTe(Cl) detectors must be considered an important advance for radioactivity studies in

  8. Identification of a type of defects in CdTe crystals by the piezo spectroscopic method

    International Nuclear Information System (INIS)

    Tarbajev, M.Yi.

    1999-01-01

    The dependence of line shifts and the photoluminescence line intensity of bound exciton complexes on the direction of elastic deformation are studied for CdTe crystals at 4.2 K. On the basis of the found differences in piezo optic behavior of excitons bound to neutral donors and acceptors, the method of identification of a type of defects in CdTe crystals is proposed

  9. Extended defects in MBE-grown CdTe-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wichrowska, Karolina; Wosinski, Tadeusz; Kret, Slawomir; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Rawski, Michal [Analytical Laboratory, Maria Curie-Sklodowska University, Lublin (Poland); Yastrubchak, Oksana [Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)

    2015-08-15

    Extended defects in the p -ZnTe/n -CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been investigated by deep-level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Four hole traps, called H1 to H4, and one electron trap, called E3, have been revealed in the DLTS spectra measured for the heterojunctions grown on the GaAs substrates. The H1, H3, H4 and E3 traps have been attributed to the electronic states of dislocations on the ground of their logarithmic capture kinetics. The DLTS peaks associated with the H1 and E3 traps were not observed in the DLTS spectra measured for the heterojunction grown on the CdTe substrate. They are most likely associated with threading dislocations generated at the mismatched interface with the GaAs substrate. Cross-sectional TEM images point out that they are dislocations of the 60 -type. In both the types of heterojunctions the H4 trap was observed only under forward-bias filling pulse, suggesting that this trap is associated with the CdTe/ZnTe interface. In addition, TEM images revealed also the presence of intrinsic and extrinsic stacking faults in the CdTe layers, which may considerably affect their electronic properties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Growth and analysis of micro and nano CdTe arrays for solar cell applications

    Science.gov (United States)

    Aguirre, Brandon Adrian

    CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

  11. Microinhomogeneities in Semi-Insulating Cd(Zn)Te

    International Nuclear Information System (INIS)

    Fochuk, P.; Nykoniuk, Y.; Zakharuk, Z.; Kopach, O.; Kovalenko, N.

    2017-01-01

    Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant R H and the Hall carrier mobility μn (σ R H ) in semi-insulating Cd 0.9 Zn 0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the R H TD could be described by two activation energies. At the transitional point, the TD of the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (ε D ). For different samples, the values for ε D 0 (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D + ]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describe the activation energy as ε 1 = ε D - αε b , where ε b is the drift barrier height found from the TD of the carrier mobility and α takes a value close to unity. Values of ε b for our studied samples lie within (0.05-0.35) eV.

  12. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  13. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  14. Midgap traps related to compensation processes in CdTe alloys

    International Nuclear Information System (INIS)

    Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

    1997-01-01

    We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd 0.8 Zn 0.2 Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. copyright 1997 The American Physical Society

  15. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

    Science.gov (United States)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-01

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  16. Temperature dependence of the Faraday rotation for CdMnCoTe films

    International Nuclear Information System (INIS)

    Ahn, J. Y.; Tanaka, M.; Imamura, M.

    2001-01-01

    The temperature dependence of magneto-optical property in the visible wavelength region has been studied on four-element semimagnetic semiconductor CdMnCoTe films deposited on quartz glass substrates by using MBE equipment. A large dispersion of Faraday rotation was observed, and the peak of the Faraday rotation was shifted to the higher photon energies with increasing Mn concentration at low temperatures. At 180 K, the value of the Faraday rotation observed for the Cd 0.647 Mn 0.34 Co 0.013 Te film on quartz glass was -0.36 deg/cmG at 630 nm. It is equivalent to the value of -0.36 deg/cmG observed at 77 K for the Cd 0.52 Mn 0.48 Te film on quartz glass. At 77 K, the Faraday rotation observed for the Cd 0.647 Mn 0.34 Co 0.013 Te film on quartz glass was -0.49 deg/cmG at 610 nm. The value is approximately two times larger than that of the Cd 0.52 Mn 0.48 Te film deposited on the same quartz glass substrate. The origin of the enhancement of Faraday rotation in CdMnCoTe films has been discussed in terms of the magnetic susceptibility χ. [copyright] 2001 American Institute of Physics

  17. Distributed Bragg reflectors obtained by combining Se and Te compounds: Influence on the luminescence from CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Kobak, J.; Janik, E.; Slupinski, T.; Golnik, A.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Faculty of Physics, Institute of Experimental Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland); Parlinska-Wojtan, M. [Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Krakow (Poland)

    2016-05-14

    We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn{sup 2+} ion.

  18. Emissions and encapsulation of cadmium in CdTe PV modules during fires

    Energy Technology Data Exchange (ETDEWEB)

    Fthenakis, V.M.; Fuhrmann, M.; Heiser, J.; Fitts, J.; Wang, W. [Brookhaven National Laboratory, Upton, NY (United States). Environmental Sciences Dept.; Lanzirotti, A. [University of Chicago, Chicago, IL (United States). Consortium for Advanced Radiation Resources

    2005-12-15

    Fires in residential and commercial properties are not uncommon. If such fires involve the roof, photovoltaic arrays mounted on the roof will be exposed to the flames. The amount of cadmium that can be released in fires involving CdTe PV and the magnitude of associated health risks has been debated. The current study aims in delineating this issue. Previous thermogravimetric studies of CdTe, involved pure CdTe and single-glass PV modules. The current study is based on glass-glass CdTe PV modules which are the only ones in the market. Pieces of commercial CdTe photovoltaic (PV) modules, sizes 25x3 cm, were heated to temperatures up to 1100{sup o}C to simulate exposure to residential and commercial building fires. The temperature rate and duration in these experiments were defined according to standard protocols. Four different types of analysis were performed to investigate emissions and redistribution of elements in the matrix of heated CdTe PV modules: (1) measurements of sample weight loss as a function of temperature; (2) analyses of Cd and Te in the gaseous emissions; (3) Cd distribution in the heated glass using synchrotron X-ray fluorescence microprobe analysis; and (4) chemical analysis for Cd and Te in the acid-digested glass. These experiments showed that almost all (i.e., 99.5%) of the cadmium content of CdTe PV modules was encapsulated in the molten glass matrix; a small amount of Cd escaped from the perimeter of the samples before the two sheets of glass melted together. Adjusting for this loss in full-size modules, results in 99.96% retention of Cd. Multiplying this with the probability of occurrence for residential fires in wood-frame houses in the US (e.g., 10{sup -4}), results in emissions of 0.06 mg/GWh; the probability of sustained fires and subsequent emissions in adequately designed and maintained utility systems appears to be zero. (Author)

  19. Correlation between electronic and magnetic properties in the IV–VI group diluted magnetic semiconductor SnMnTe

    NARCIS (Netherlands)

    Eltink, S.J.E.A.; Swagten, H.J.M.; Stoffels, N.M.J.; Jonge, de W.J.M.

    1990-01-01

    The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferromagnetic interactions are dominant. On the basis of preliminary experiments on the low temperature magnetic phases no clear evidence for re-entrant behavior can be submitted.

  20. To study the linear and nonlinear optical properties of Se-Te-Bi-Sn/PVP (polyvinylpyrrolidone) nanocomposites

    Science.gov (United States)

    Tyagi, Chetna; Yadav, Preeti; Sharma, Ambika

    2018-05-01

    The present work reveals the optical study of Se82Te15Bi1.0Sn2.0/polyvinylpyrrolidone (PVP) nanocomposites. Bulk glasses of chalcogenide was prepared by well-known melt quenching technique. Wet chemical technique is proposed for making the composite of Se82Te15Bi1.0Sn2.0 and PVP polymer as it is easy to handle and cost effective. The composites films were made on glass slide from the solution of Se-Te-Bi-Sn and PVP polymer using spin coating technique. The transmission as well as absorbance is recorded by using UV-Vis-NIR spectrophotometer in the spectral range 350-700 nm. The linear refractive index (n) of polymer nanocomposites are calculated by Swanepoel approach. The linear refractive index (n) PVP doped Se82Te15Bi1.0Sn2.0 chalcogenide is found to be 1.7. The optical band gap has been evaluated by means of Tauc extrapolation method. Tichy and Ticha model was utilized for the characterization of nonlinear refractive index (n2).

  1. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    International Nuclear Information System (INIS)

    Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

    2009-01-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

  2. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    Science.gov (United States)

    Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

    2009-08-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

  3. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  4. Plasmon resonance-induced photoluminescence enhancement of CdTe/Cds quantum dots thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongyu [Nanjing University of Posts and Telecommunications, Nanjing 210003 (China); National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wu, Yangqing; Xu, Jun; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2016-11-30

    Highlights: • CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated. • PL intensity of the quantum dots films was enhanced due to Au nanorods. • Internal quantum efficiency increased due to localized surface plasmon resonance. • The lifetimes of quantum dots films decreased after interaction with Au nano-rods. - Abstract: CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated on planar Si substrates. The optical properties of all samples were investigated and the corresponding simulations were studied. It was found that the photoluminescence intensity of the CdTe/CdS quantum dots films was enhanced about 9-fold after the incorporation of Au nano-rods, the internal quantum efficiency increased from 24.3% to 35.2% due to the localized surface plasmon resonance. The time-resolved luminescence decay curves showed that the lifetimes of CdTe/CdS quantum dots films decreased to 2.8 ns after interaction with Au nano-rods. The results of finite-difference time-domain simulation indicated that Au nano-rods induced the localization of electric field, which enhanced the PL intensity of quantum dots films in the vicinity of Au nano-rods.

  5. Double valley Dirac fermions for 3D and 2D Hg$_{1-x}$Cd$_x$Te with strong asymmetry

    OpenAIRE

    Marchewka, M.

    2017-01-01

    In this paper the possibility to bring about the double- valley Dirac fermions in some quantum structures is predicted. These quantum structures are: strained 3D Hg$_{1-x}$Cd$_x$Te topological insulator (TI) with strong interface inversion asymmetry and the asymmetric Hg$_{1-x}$Cd$_x$Te double quantum wells (DQW). The numerical analysis of the dispersion relation for 3D TI Hg$_{1-x}$Cd$_x$Te for the proper Cd ($x$)-content of in the Hg$_{1-x}$Cd$_x$Te-compound clearly show that the inversion ...

  6. T-x-y diagrams for reciprocal systems PbX + CdI2 = CdX + PbI2 (X=S, Se, Te)

    International Nuclear Information System (INIS)

    Odin, I.N.

    2001-01-01

    The present research is undertaken in search of the new complex phases with interesting physical properties. The synthesized samples was analyzed by differential thermal, X-ray diffraction and microstructural methods. The diagonal cross-section CdTe - PbI 2 of the mutual PbTe + CdI 2 = CdTe + PbI 2 system is stable. The T-x phase diagram of the CdTe - PbI 2 system possess eutectic type, the coordinates of eutectic point is 657 ± 2 K, 15 ± 1 mol. % of CdTe. The lead iodide based solid solutions with the mixed structure and the CdTe based solid solutions take place in the equilibria. Solid CdTe dissolves 0.2 mol. % PbI 2 . The fields of the primary crystallization of the CdTe, Pb 1-x Cd x I 2 , PbTe based solid solutions are on the liquidus surface [ru

  7. Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

    Science.gov (United States)

    Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

    2018-04-01

    The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

  8. PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Ishchenko, D. V., E-mail: miracle4348@gmail.com; Klimov, A. E.; Shumsky, V. N.; Epov, V. S. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2016-12-15

    A model of the Pb{sub 1–x}Sn{sub x}Te:In compound, based on concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi-level position and carrier concentration are calculated depending on the indium doping level and are compared with experimental data. The transient current–voltage characteristics are calculated in the mode of injection from the contact and current limitation by space charge at various voltage-variation rates. The data obtained are compared with the experiments. It is demonstrated that the shape of the characteristics is controlled by the parameters of electron capture at localized states. Photocurrent relaxation in a magnetic field is studied, and the mechanism of such relaxation is discussed under the assumption of the magnetic freezing of carriers.

  9. Porcine, murine and human sialoadhesin (Sn/Siglec-1/CD169): portals for porcine reproductive and respiratory syndrome virus entry into target cells.

    Science.gov (United States)

    Van Breedam, Wander; Verbeeck, Mieke; Christiaens, Isaura; Van Gorp, Hanne; Nauwynck, Hans J

    2013-09-01

    Porcine sialoadhesin (pSn; a sialic acid-binding lectin) and porcine CD163 (pCD163) are molecules that facilitate infectious entry of porcine reproductive and respiratory syndrome virus (PRRSV) into alveolar macrophages. In this study, it was shown that murine Sn (mSn) and human Sn (hSn), like pSn, can promote PRRSV infection of pCD163-expressing cells. Intact sialic acid-binding domains are crucial, since non-sialic acid-binding mutants of pSn, mSn and hSn did not promote infection. Endodomain-deletion mutants of pSn, mSn and hSn promoted PRRSV infection less efficiently, but also showed markedly reduced expression levels, making further research into the potential role of the Sn endodomain in PRRSV receptor activity necessary. These data further complement our knowledge on Sn as an important PRRSV receptor, and suggest - in combination with other published data - that species differences in the main PRRSV entry mediators Sn and CD163 do not account for the strict host species specificity displayed by the virus.

  10. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  11. Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Choi Hyojeong

    2016-09-01

    Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

  12. Characterization of the SnO{sub 2}:F/CdS:In structures prepared by the spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ikhmayies, Shadia J.; Ahmad-Bitar, Riyad N. [University of Jordan, Faculty of Science, Physics Department, Queen Rania Street, Amman 11942 (Jordan)

    2010-05-15

    SnO{sub 2}:F/CdS:In bilayers were spray-deposited on glass substrates. The structures were characterized by recording and investigating their transmittance curves, I-V plots, X-ray diffractograms (XRD) and by observing their scanning electron microscope (SEM) images. From the I-V plots it was found that the SnO{sub 2}:F forms an ohmic or quasi-ohmic contact with CdS:In. XRD patterns show the polycrystalline nature of the films and show that there is a small shift in the position of the (2 0 0) line of SnO{sub 2}:F without the appearance of new peaks. The morphology of the structures are compared with those of SnO{sub 2}:F alone and CdS:In alone on glass substrates. (author)

  13. Ultrasonic-assisted synthesis of aqueous CdTe/CdS QDs in salt water bath heating

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yinglian [College of Food Science and Engineering, Ocean University of China, Qingdao 266003, Shandong Province (China); College of Food Science and Engineering, Qingdao Agricultural University of China, Qingdao 266109, Shandong Province (China); Li, Chunsheng; Xu, Ying [College of Food Science and Engineering, Ocean University of China, Qingdao 266003, Shandong Province (China); Wang, Dongfeng, E-mail: wangdf@ouc.edu.cn [College of Food Science and Engineering, Ocean University of China, Qingdao 266003, Shandong Province (China)

    2014-09-01

    Highlights: • Ultrasonic promotes formation of crystal nucleus and QDs were synthesized in 0.5 h. • The new heating method provides a PLQY of up to 97.13%. • The synthesis mechanism of the core shell structure of the CdTe/CdS QDs was inferred. • The preparation method was efficient, simple and clean. - Abstract: A novel simple method for fast and efficient synthesis of aqueous CdTe/CdS quantum dots (QDs) with core–shell structure was developed by using salt water bath heating with the ultrasonic-assisted technique in this paper. The formation of crystal nucleus was promoted by ultrasonic and CdTe/CdS QDs with blue fluorescence were synthesized only in 0.5 h. The heat source was bath heating in salt water solution at 60% NaCl and the heating temperature could reach 105 °C. The heating method solved the biggest drawback of low photoluminescence quantum yield (PLQY) of ordinal bath heating in water. The preparation was cheap, simple and had less pollution to the environment. The properties of the CdTe/CdS QDs were thoroughly investigated by ultraviolet–visible (UV–vis), photoluminescence (PL), transmission electron microscope (TEM), laser size analysis, fourier transform infrared spectra (FTIR), X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). Different CdTe/CdS QDs with core shell structure were efficiently synthesized and the maximum PLQY could reach 97.13% when refluxing at 105 °C for 2 h. These QDs exhibited uniform dispersity, high fluorescence intensity, good optical property and long life of fluorescent. The synthesis mechanism of the core shell structure of the QDs was inferred that the Cd{sup 2+} might coordinate with sulfur (S) as well as thiol propionate (–SCH{sub 2}CH{sub 2}COO{sup −1}) to constitute two relatively thick compound layers on the QDs surface as passive shells.

  14. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  15. Hydrothermal synthesis of thiol-capped CdTe nanoparticles and their optical properties.

    Science.gov (United States)

    Bu, Hang-Beom; Kikunaga, Hayato; Shimura, Kunio; Takahasi, Kohji; Taniguchi, Taichi; Kim, DaeGwi

    2013-02-28

    Water soluble nanoparticles (NPs) with a high emission property were synthesized via hydrothermal routes. In this report, we chose thiol ligand N-acetyl-L-cysteine as the ideal stabilizer and have successfully employed it to synthesize readily size-controllable CdTe NPs in a reaction of only one step. Hydrothermal synthesis of CdTe NPs has been carried out in neutral or basic conditions so far. We found out that the pH value of precursor solutions plays an important role in the uniformity of the particle size. Actually, high quality CdTe NPs were synthesized under mild acidic conditions of pH 5. The resultant NPs indicated good visible light-emitting properties and stability. Further, the experimental results showed that the reaction temperature influenced significantly the growth rate and the maximum size of the NPs. The CdTe NPs with a high photoluminescence quantum yield (the highest value: 57%) and narrower half width at half maximum (the narrowest value: 33 nm) were attained in very short time, within 40 minutes, reaching diameters of 2.3 to 4.3 nm. The PL intensity was increased with an increase in the reaction time, reflecting the suppression of nonradiative recombination processes. Furthermore, the formation of CdTe/CdS core-shell structures was discussed from the viewpoint of PL dynamics and X-ray diffraction studies.

  16. Toxicity assessment of zebrafish following exposure to CdTe QDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei, E-mail: wzhang@ecust.edu.cn [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Lin, Kuangfei, E-mail: kflin@ecust.edu.cn [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Miao, Youna [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Dong, Qiaoxiang; Huang, Changjiang; Wang, Huili [Zhejiang Provincial Key Lab for Technology and Application of Model Organisms, Wenzhou Medical College, Wenzhou 325035 (China); Guo, Meijin [State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China); Cui, Xinhong [Shanghai Institute of Landscape Gardening, Shanghai 200233 (China)

    2012-04-30

    Highlights: Black-Right-Pointing-Pointer The LC{sub 50} of TGA-CdTe for zebrafish at 120 hpf was 185.9 nM. Black-Right-Pointing-Pointer Zebrafish exposed to TGA-CdTe resulted in lower hatch rate and more malformation. Black-Right-Pointing-Pointer Body length and heart beat of zebrafish declined after exposure to TGA-CdTe. Black-Right-Pointing-Pointer Larvae exposure to TGA-CdTe elicited a higher basal swimming rate. Black-Right-Pointing-Pointer Abnormal vascular of FLI-1 transgenic zebrafish larvae exposed to TGA-CdTe occurred. - Abstract: CdTe quantum dots (QDs) are nanocrystals of unique composition and properties that have found many new commercial applications; therefore, their potential toxicity to aquatic organisms has become a hot research topic. The lab study was performed to determine the developmental and behavioral toxicities to zebrafish under continuous exposure to low concentrations of CdTe QDs (1-400 nM) coated with thioglycolic acid (TGA). The results show: (1) the 120 h LC{sub 50} of 185.9 nM, (2) the lower hatch rate and body length, more malformations, and less heart beat and swimming speed of the exposed zebrafish, (3) the brief burst and a higher basal swimming rate of the exposed zebrafish larvae during a rapid transition from light-to-dark, and (4) the vascular hyperplasia, vascular bifurcation, vascular crossing and turbulence of the exposed FLI-1 transgenic zebrafish larvae.

  17. High luminescent fibers with hybrid SiO2-coated CdTe nanocrystals fabricated by electrospinning technique

    International Nuclear Information System (INIS)

    Cao, Yongqiang; Liu, Ning; Yang, Ping; Shi, Ruixia; Ma, Qian; Zhang, Aiyu; Zhu, Yuanna; Wang, Junpeng; Wang, Jianrong

    2015-01-01

    The polyvinylpyrrolidone (PVP) hybrid luminescent micro-/nanofibers doped with the novel hybrid SiO 2 -coated CdTe nanocrystals (HS-CdTe NCs) have been fabricated for the first time via the electrospinning technique. The morphologies and photoluminescence (PL) emissions of HS-CdTe/PVP micro-/nanofibers prepared by doping the HS-CdTe NCs with the different PL peak wavelength (571, 616, and 643 nm) in PVP fibers were investigated by optical and PL microscope. The results revealed that all the HS-CdTe/PVP hybrid fibers showed an ultralong length for several hundreds of micrometers and a relatively uniform diameter of 1000 ∼ 1200 nm. The hybrid fibers displayed a wavelength-tunable PL emission, determining by the PL of doped HS-CdTe NCs. Moreover, similar to the original PL properties of HS-CdTe NCs before the electrospinning, the HS-CdTe/PVP fibers also showed a series of superior PL properties, such as narrow and symmetry PL spectrum, high, and uniform brightness. For comparison purpose, we also prepared three CdTe/PVP hybrid fibers by doping the 553 nm, 600 nm, and 633 nm PL-emitting CdTe NCs respectively in PVP electrospinning fibers. The characterization results showed that, the obtained three CdTe/PVP hybrid fibers had a basically satisfactory micro-/nanofiber morphology with a long length and relatively uniform diameter, but all the fibers exhibited very weak PL emissions. The enormous contrast in PL properties between HS-CdTe/PVP and CdTe/PVP fibers should mainly be ascribed to the different connection modes of ligands with the NCs and the passivation effect of inert hybrid silica shell on HS-CdTe. It is hopeful that the high luminescent HS-CdTe/PVP micro-/nanofibers with the tunable PL peak wavelength would be a good candidate in the optical sensor, light-emitting devices (LEDs), nanometer-scale waveguides, and the other related photonic materials. - Highlights: • The HS-CdTe/PVP electrospun hybrid fibers were fabricated for the first time. • The

  18. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    International Nuclear Information System (INIS)

    Sedova, I. V.; Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-01-01

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is Δa/a ∼ 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 ± 1.5 nm). In the photoluminescence spectra, a noticeable (∼150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs

  19. Photovoltaic performance of a Cd{sub 1−x}Mg{sub x}Te/CdS top-cell structure

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Omar S. [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico); Centro del Cambio Global y la Sustentabilidad en el Sureste, Villahermosa, Tabasco 86080 (Mexico); Regalado-Pérez, E.; Mathews, N.R. [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico); Morales, Erik R. [División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Cunduacán, Tabasco 86690 (Mexico); Reyes-Coronado, David [Unidad Académica Playa del Carmen, Universidad de Quintana Roo, Playa del Carmen, Quintana Roo 77710 (Mexico); Galvez, Geovanni Hernández [Centro del Cambio Global y la Sustentabilidad en el Sureste, Villahermosa, Tabasco 86080 (Mexico); Mathew, Xavier, E-mail: xm@ier.unam.mx [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2015-05-01

    In this paper we report the progress in developing a wide band gap alloy material based on CdTe to use as the top-cell absorber in tandem solar cells. High photovoltaic performance for a Cd{sub 1−x}Mg{sub x}Te/CdS top-cell was achieved by tuning the composition of the Cd{sub 1−x}Mg{sub x}Te film, and optimizing the device processing. We have carried out studies on the effect of vapor chloride treatment of the Cd{sub 1−x}Mg{sub x}Te/CdS device and the thermal annealing of the Cu/Au contacts on the opto-electronic properties of the device. With improved contact processing and post deposition treatments, we were able to achieve 9.3% efficiency for a 1.6 eV band gap top-cell; Cd{sub 1−x}Mg{sub x}Te/CdS on conductive glass substrate. - Highlights: • Cd{sub 1−x}Mg{sub x}Te films obtained by co-evaporation of CdTe and Mg • Band gap of Cd{sub 1−x}Mg{sub x}Te can be easily tuned by verifying x. • Band gap of Cd{sub 1−x}Mg{sub x}Te is stable only for short annealing durations. • Obtained efficiency of a Cd{sub 1−x}Mg{sub x}Te based device with a band gap of 1.6 eV is 9.3%.

  20. Analysis of grain boundaries, twin boundaries, and Te precipitates in CdZnTe grown by high-pressure Bridgeman method

    International Nuclear Information System (INIS)

    Heffelfinger, J.R.; Medlin, D.L.; James, R.B.

    1998-03-01

    Grain boundaries and twin boundaries in commercial Cd 1-x Zn x Te, which is prepared by a high pressure Bridgeman technique, have been investigated with transmission electron microscopy, scanning electron microscopy, infrared light microscopy and visible light microscopy. Boundaries inside these materials were found to be decorated with Te precipitates. The shape and local density of the precipitates were found to depend on the particular boundary. For precipitates that decorate grain boundaries, their microstructure was found to consist of a single, saucer shaped grain of hexagonal Te (space group P3 1 21). Analysis of a Te precipitate precipitates by selected area diffraction revealed the Te to be aligned with the surrounding Cd 1-x Zn x Te grains. This alignment was found to match the (111) Cd 1-x Z x Te planes with the (1 bar 101) planes of hexagonal Te. Crystallographic alignments between the Cd 1-x Zn x Te grains were also observed for a high angle grain boundary. The structure of the grain boundaries and the Te/Cd 1-x Zn x Te interface are discussed

  1. Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

    Science.gov (United States)

    Tarasenko, S. A.; Durnev, M. V.; Nestoklon, M. O.; Ivchenko, E. L.; Luo, Jun-Wei; Zunger, Alex

    2015-02-01

    HgTe is a band-inverted compound which forms a two-dimensional topological insulator if sandwiched between CdTe barriers for a HgTe layer thickness above the critical value. We describe the fine structure of Dirac states in the HgTe/CdTe quantum wells of critical and close-to-critical thicknesses and show that the necessary creation of interfaces brings in another important physical effect: the opening of a significant anticrossing gap between the tips of the Dirac cones. The level repulsion driven by the natural interface inversion asymmetry of zinc-blende heterostructures considerably modifies the electron states and dispersion but preserves the topological transition at the critical thickness. By combining symmetry analysis, atomistic calculations, and extended k .p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. We discuss how the fingerprints of the predicted zero-magnetic-field splitting of the Dirac cones could be detected experimentally by studying magnetotransport phenomena, cyclotron resonance, Raman scattering, and THz radiation absorption.

  2. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    International Nuclear Information System (INIS)

    Siepchen, B.; Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M.; Bossert, S.; Grimm, M.; Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H.

    2013-01-01

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb 2 Te 3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb 2 Te 3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  3. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    Energy Technology Data Exchange (ETDEWEB)

    Pillet, J.C., E-mail: jean-christophe.pillet@cea.fr [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Département Optique et Photonique, F38054 Grenoble (France); Pierre, F. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Service de Caractérisation des Matériaux et Composants, F38054 Grenoble (France); Jalabert, D. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec Grenoble F-38054 (France)

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed.

  4. Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

    International Nuclear Information System (INIS)

    Hu Fengqin; Ran Yuliang; Zhou Zhuan; Gao Mingyuan

    2006-01-01

    Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection

  5. Effect of thermal stress on the performance of HgCdTe/Si diodes and FPAs

    International Nuclear Information System (INIS)

    Zhang, Shan; Hu, Xiao-Ning

    2012-01-01

    As a typical hetero-epitaxial material, the HgCdTe film which directly grows on the Si substrate possesses great residual stress for the large lattice and thermal expansion mismatch. Thermal stress caused by the thermal expansion mismatch dominates the stress mechanism after growth and seriously affects the device performance. In this paper, the performance of the HgCdTe/Si material, diodes and focal plane arrays under different thermal stress condition was studied. The experimental results indicate that the performance regularly changes with the thermal stress and all the results can be duplicated and recoverable. By analyzing the changes of the energy band under different stress conditions, it was found that the stress in the HgCdTe film impacts the film's characteristics. The HgCdTe film with tensile stress exhibits higher electron mobility, while with the compressive stress, the film exhibits higher hole mobility than that of the bulk HgCdTe crystal. Finally, the theoretical analysis can explain the experimental results well. (paper)

  6. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  7. Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

    Directory of Open Access Journals (Sweden)

    Cecilia Stahl Vieira

    2011-03-01

    Full Text Available Semiconductor nanoparticles, such as quantum dots (QDs, were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells, giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM is optimal for bioimaging, whereas a high concentration (200 μM CdTe could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

  8. [Oxidative damage effects induced by CdTe quantum dots in mice].

    Science.gov (United States)

    Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

    2017-07-20

    Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

  9. Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

    2014-07-15

    Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Study the interaction between CdTe-glutathione and human serum albumin

    International Nuclear Information System (INIS)

    Yang, Qing; Zhou, Xi-min; Zhu, Yi-shuo; Chen, Xing-guo

    2013-01-01

    In this paper, glutathione (GSH) modified CdTe quantum dots (CdTe-GSH QDs) were synthesized in an aqueous solution. Then, the binding of the CdTe-GSH QDs to human serum albumin (HSA) was studied using the fluorescence spectroscopy. The quenching mechanism was investigated in terms of the association constants and basic thermodynamic parameters. The fluorescence data revealed that CdTe-GSH QDs could quench the intrinsic fluorescence of human serum albumin by a static quenching mechanism. Furthermore, alteration of the secondary protein structure in the presence of the QDs was confirmed by synchronous fluorescence spectra. - Highlights: ► In this paper, the binding of the CdTe-GSH QDs to human serum albumin (HSA) was studied using a fluorescence spectroscopy. ► The quenching mechanism was investigated in terms of the association constants and basic thermodynamic parameters. ► Furthermore, alteration of the secondary protein structure in the presence of the QDs was confirmed by synchronous fluorescence spectra. ► The research can help us assess biological toxicity of QDs and further expand the application scope of QDs.

  11. Study the interaction between CdTe-glutathione and human serum albumin

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qing; Zhou, Xi-min; Zhu, Yi-shuo [National Key Laboratory of Applied Organic Chemistry, Lanzhou University, Lanzhou 730000 (China); Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Chen, Xing-guo, E-mail: chenxg@lzu.edu.cn [National Key Laboratory of Applied Organic Chemistry, Lanzhou University, Lanzhou 730000 (China); Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2013-03-15

    In this paper, glutathione (GSH) modified CdTe quantum dots (CdTe-GSH QDs) were synthesized in an aqueous solution. Then, the binding of the CdTe-GSH QDs to human serum albumin (HSA) was studied using the fluorescence spectroscopy. The quenching mechanism was investigated in terms of the association constants and basic thermodynamic parameters. The fluorescence data revealed that CdTe-GSH QDs could quench the intrinsic fluorescence of human serum albumin by a static quenching mechanism. Furthermore, alteration of the secondary protein structure in the presence of the QDs was confirmed by synchronous fluorescence spectra. - Highlights: Black-Right-Pointing-Pointer In this paper, the binding of the CdTe-GSH QDs to human serum albumin (HSA) was studied using a fluorescence spectroscopy. Black-Right-Pointing-Pointer The quenching mechanism was investigated in terms of the association constants and basic thermodynamic parameters. Black-Right-Pointing-Pointer Furthermore, alteration of the secondary protein structure in the presence of the QDs was confirmed by synchronous fluorescence spectra. Black-Right-Pointing-Pointer The research can help us assess biological toxicity of QDs and further expand the application scope of QDs.

  12. Phase equilibria in TlX-Cd(Zn)X (X-S, Se, Te) systems

    International Nuclear Information System (INIS)

    Gusejnov, F.Kh.; Babanly, M.B.; Kuliev, A.A.

    1982-01-01

    The methods of DTA, RPA and measurement of the alloys microhardness have been used to investigate the phase equilibria in the TlX-Zn(Cd)X systems. It is established that the TlZn(Cd)X 2 compounds, the presence of which is mentioned in the literature earlier, do not form in these systems. The TlSe-Zn(Cd)Se systems apply to the simple eutectic type and characterized by digenerated eutectic near the TlSe. Thermodynamical analysis of the liquidus of the TlSe-CdSe and TlTe-Zn(Cd)Te systems in approximation of the regular solutions, taking into account the dissociation of tallium chalcogenides in liquid phase, is made

  13. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Yeom, Jong-taek [Light Metal Division, Korea Institute of Materials Science (KIMS), Changwon 642-831 (Korea, Republic of); Kim, Jae-il [Materials Science and Engineering, University of Dong-A, Hadan-dong, Saha-gu, Busan 604-714 (Korea, Republic of); Nam, Tae-hyun, E-mail: tahynam@gnu.ac.kr [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

    2013-12-15

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (

  14. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    International Nuclear Information System (INIS)

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun; Yeom, Jong-taek; Kim, Jae-il; Nam, Tae-hyun

    2013-01-01

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (< Hv 200) of the alloys displaying the B2-B19′ transformation. Solid solution hardening was an important factor for inducing the B2-R transformation in Ti–Ni–X (X = non-transition elements) alloys

  15. Directional solidification of filamentary shapes of Pb--Cd and Pb--Sn eutectic alloys

    International Nuclear Information System (INIS)

    Dhindaw, B.K.; Verhoeven, J.D.; Spencer, C.R.; Gibson, E.D.

    1978-01-01

    Eutectic alloys of Pb--Cd and Pb--Sn were directionally solidified as thin filamentary strips contained in stainless steel and quartz capillaries. As the solidification rate increased the filament width, w, had to be reduced to maintain complete alignment of the lamellae clear across the filament. It was determined that in order to achieve complete alignment the ratio of filament width to lamellar spacing, w/lambda had to be less than about 30. Experiments were carried out at rates of 2-400 μm/s and at temperature gradients of 130 and 320 0 C/cm

  16. The room-temperature synthesis of anisotropic CdHgTe quantum dot alloys: a "molecular welding" effect.

    Science.gov (United States)

    Taniguchi, Shohei; Green, Mark; Lim, Teck

    2011-03-16

    The room-temperature chemical transformation of spherical CdTe nanoparticles into anisotropic alloyed CdHgTe particles using mercury bromide in a toluene/methanol system at room temperature has been investigated. The resulting materials readily dissolved in toluene and exhibited a significant red-shift in the optical properties toward the infrared region. Structural transformations were observed, with electron microscopy showing that the CdTe nanoparticles were chemically attached ('welded') to other CdTe nanoparticles, creating highly complex anisotropic heterostructures which also incorporated mercury.

  17. Water-Soluble CdTe/CdS Core/Shell Semiconductor Nanocrystals: How Their Optical Properties Depend on the Synthesis Methods

    Directory of Open Access Journals (Sweden)

    Brener R. C. Vale

    2016-10-01

    Full Text Available We conducted a comparative synthesis of water-soluble CdTe/CdS colloidal nanocrystalline semiconductors of the core/shell type. We prepared the CdS shell using two different methods: a one-pot approach and successive ionic layer adsorption and reaction (SILAR; in both cases, we used 3-mercaptopropionic acid (MPA as the surface ligand. In the one-pot approach, thiourea was added over the freshly formed CdTe dispersion, and served as the sulfur source. We achieved thicker CdS layers by altering the Cd:S stoichiometric ratio (1:1, 1:2, 1:4, and 1:8. The Cd:S ratios 1:1 and 1:2 furnished the best optical properties; these ratios also made the formation of surface defects less likely. For CdTe/CdS obtained using SILAR, we coated the surface of three differently sized CdTe cores (2.17, 3.10, and 3.45 nm with one to five CdS layers using successive injections of the Cd2+ and S2– ions. The results showed that the core size influenced the optical properties of the materials. The deposition of three to five layers over the surface of smaller CdTe colloidal nanocrystals generated strain effects on the core/shell structure.

  18. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  19. Fabrication and investigation of photosensitive MoOx/n-CdTe heterojunctions

    Science.gov (United States)

    Solovan, M. M.; Gavaleshko, N. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Tresso, E.

    2016-10-01

    MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR ˜ 106. The temperature dependences of the height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.

  20. Heavy doping of CdTe single crystals by Cr ion implantation

    Science.gov (United States)

    Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

    2018-03-01

    Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

  1. Impulse response measurement in the HgCdTe avalanche photodiode

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2018-04-01

    HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

  2. Growth and optical characterization of colloidal CdTe nanoparticles capped by a bifunctional molecule

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-sadek, M.S., E-mail: el_sadek_99@email.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena-83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai-600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai-600025 (India)

    2010-08-15

    Thiol-capped CdTe nanoparticles were synthesized in aqueous solution by wet chemical route. CdTe nanoparticles with bifunctional molecule mercaptoacetic acid as a stabilizer were synthesized at pH{approx}11.2 and using potassium tellurite as tellurium source. The effect of refluxing time on the preparation of these samples was measured using UV-vis absorption and photoluminescence analysis. By increasing the refluxing time the UV-vis absorption and photoluminescence results show that the band edge emission is redshifted. The synthesized thiol-capped CdTe were characterized with FT-IR, TEM and TG-DTA. The particle size was calculated by the effective mass approximation (EMA). The role of precursors, their composition, pH and reaction procedure on the development of nanoparticles are analyzed.

  3. Physical and optical properties of size-selective CdTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fok, Alice [Department of Chemistry, The City College of New York, CUNY New York, NY 10031 (United States); Morales, Jorge [Department of Biology, City College of New York, CUNY New York, NY 10031 (United States); Sohel, Mohammad [Natural Sciences Department, Hostos College, CUNY Bronx, NY 10451 (United States)

    2010-06-15

    Physical and optical properties of colloidal cadmium telluride nanocrystals (CdTe NCs) were investigated. The CdTe NCs were synthesized by reacting elemental tellurium dissolved in tributylphosphine with a mixture of cadmium oxide, octadecene, and oleic acid. These NCs, which were characterized by transmission electron microscopy (TEM) are spherical and ranged from 5 to 7 nm in diameter. The identity of the compound post-synthesis was confirmed by X-Ray diffraction (XRD) patterns. UV-Vis and photoluminescence (PL) properties as grown and pure CdTe samples were investigated. Bright excitonic photoluminescence emission was observed (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. One-step synthesis of CdTe branched nanowires and nanorod arrays

    International Nuclear Information System (INIS)

    Hou Junwei; Yang Xiuchun; Lv Xiaoyi; Peng Dengfeng; Huang Min; Wang Qingyao

    2011-01-01

    Single crystalline CdTe branched nanowires and well-aligned nanorod arrays were simultaneously synthesized by a simple chemical vapor deposition (CVD) technique. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) and selected area electronic diffraction (SAED) were used to study the crystalline structure, composition and morphology of different samples. Vapor-liquid-solid (VLS) and vapor-solid (VS) processes were proposed for the formation of the CdTe branched nanowires and nanorod arrays, respectively. As-grown CdTe nanorod arrays show a strong red emission band centered at about 620 nm, which can be well fitted by two Gaussian curves centered at 610 nm and 635 nm, respectively.

  5. Electrochemical Determination of Uric Acid at CdTe Quantum Dot Modified Glassy Carbon Electrodes.

    Science.gov (United States)

    Pan, Deng; Rong, Shengzhong; Zhang, Guangteng; Zhang, Yannan; Zhou, Qiang; Liu, Fenghai; Li, Miaojing; Chang, Dong; Pan, Hongzhi

    2015-01-01

    Cyclic voltammetry and differential pulse voltammetry were used to investigate the electrochemical behavior of uric acid (UA) at a CdTe quantum dot (QD) modified the glassy carbon electrode (GCE). CdTe QDs, as new semiconductor nanocrystals, can greatly improve the peak current of UA. The anodic peak current of UA was linear with its concentration between 1.0×10(-6) and 4.0×10(-4) M in 0.1 M pH 5.0 phosphate buffer solution. The LOD for UA at the CdTe electrode (1.0×10(-7) M) was superior to that of the GCE. In addition, we also determined the effects of scan rate, pH, and interferences of UA for the voltammetric behavior and detection. The results indicated that modified electrode possessed excellent reproducibility and stability. Finally, a new and efficient electrochemical sensor for detecting UA was developed.

  6. CdTe/ZnS quantum dots as fluorescent probes for ammonium determination.

    Science.gov (United States)

    Yi, Kui-Yu

    2016-06-01

    Novel CdTe/ZnS quantum dot (QD) probes based on the quenching effect were proposed for the simple, rapid, and specific determination of ammonium in aqueous solutions. The QDs were modified using 3-mercaptopropionic acid, and the fluorescence responses of the CdTe/ZnS QD probes to ammonium were detected through regularity quenching. The quenching levels of the CdTe/ZnS QDs and ammonium concentration showed a good linear relationship between 4.0 × 10(-6) and 5.0 × 10(-4) mol/L; the detection limit was 3.0 × 10(-7) mol/L. Ammonium contents in synthetic explosion soil samples were measured to determine the practical applications of the QD probes and a probable quenching mechanism was described. Copyright © 2015 John Wiley & Sons, Ltd. Copyright © 2015 John Wiley & Sons, Ltd.

  7. Tests of UFXC32k chip with CdTe pixel detector

    Science.gov (United States)

    Maj, P.; Taguchi, T.; Nakaye, Y.

    2018-02-01

    The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

  8. A new MBE CdTe photoconductor array detector for X-ray applications

    International Nuclear Information System (INIS)

    Yoo, S.S.; Sivananthan, S.; Faurie, J.P.; Rodricks, B.; Bai, J.; Montano, P.A.; Argonne National Lab., IL

    1994-10-01

    A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 microm FWHM using a 50 microm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors in particular for the new high brightness synchrotron sources

  9. Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

    Science.gov (United States)

    Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

    2018-02-01

    Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

  10. Helium like impurity in CdTe/ Cd1-xMnxTe semimagnetic semiconductors under magnetic field: Dimensionality effect on electron - Electron interaction

    Science.gov (United States)

    Kalpana, Panneer Selvam; Jayakumar, Kalyanasundaram

    2017-11-01

    We study the effect of magnetic field on the Coulomb interaction between the two electrons confined inside a CdTe/Cd1-xMnxTe Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD) for the composition of Mn2+ ion, x = 0.3. The two particle Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the applied magnetic field tremendously alters the Coulomb interaction of the electrons and their binding to the donor impurity by shrinking the spatial extension of the two particle wavefunction and leads to tunnelling through the barrier. The qualitative phenomenon involved in such variation of electron - electron interaction with the magnetic field has also been explained through the 3D - plot of the probability density function.

  11. Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

    Science.gov (United States)

    Das, Arkaprava; Singh, Fouran

    2018-04-01

    Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

  12. Application of CdTe for the NeXT mission

    International Nuclear Information System (INIS)

    Takahashi, Tadayuki; Nakazawa, Kazuhiro; Watanabe, Shin; Sato, Goro; Mitani, Takefumi; Tanaka, Takaaki; Oonuki, Kousuke; Tamura, Ken'ichi; Tajima, Hiroyasu; Kamae, Tuneyoshi; Madejski, Greg; Nomachi, Masaharu; Fukazawa, Yasushi; Makishima, Kazuo; Kokubun, Motohide; Terada, Yukikatsu; Kataoka, Jun; Tashiro, Makoto

    2005-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. The high-atomic number of the materials (Z Cd =48,Z Te =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (E g =1.5eV) allows to operate the detector at room temperature. Based on recent achievements in high-resolution CdTe detectors, in the technology of ASICs and in bump-bonding, we have proposed the novel hard X-ray and γ-ray detectors for the NeXT mission in Japan. The high-energy response of the super mirror onboard NeXT will enable us to perform the first sensitive imaging observations up to 80keV. The focal plane detector, which combines a fully depleted X-ray CCD and a pixellated CdTe detector, will provide spectra and images in the wide energy range from 0.5 to 80keV. In the soft γ-ray band up to ∼ 1MeV, a narrow field-of-view Compton γ-ray telescope utilizing several tens of layers of thin Si or CdTe detector will provide precise spectra with much higher sensitivity than present instruments. The continuum sensitivity will reach several x10 -8 photons -1 keV -1 cm -2 in the hard X-ray region and a few x10 -7 photons -1 keV -1 cm -2 in the soft γ-ray region

  13. Bond lengths in Cd1-xZnxTe beyond linear laws revisited

    International Nuclear Information System (INIS)

    Koteski, V.; Haas, H.; Holub-Krappe, E.; Ivanovic, N.; Mahnke, H.-E.

    2004-01-01

    We have investigated the development of local bond lengths with composition in the Cd 1-x Zn x Te mixed system by measuring the fine structure in X-ray absorption (EXAFS) at all three constituent atoms. The bond strength is found to dominate over the averaging of the bulk so that the local bond length deviates only slightly from its natural value determined for the pure binary components ZnTe and CdTe, respectively. The deviations are significantly less than predicted by a simple radial force constant model for tetrahedrally co-ordinated binary systems, and the bond-length variation with concentration is significantly non-linear. For the second shell, bimodal anion-anion distances are found while the cation-cation distances can already be described by the virtual crystal approximation. In the diluted regime close to the end-point compounds, we have complemented our experimental work by ab initio calculations based on density functional theory with the WIEN97 program using the linearised augmented plane wave method. Equilibrium atomic lattice positions have been calculated for the substitutional isovalent metal atom in a 32-atom super cell, Zn in the CdTe lattice or Cd in the ZnTe lattice, respectively, yielding good agreement with the atomic distances as determined in our EXAFS experiments

  14. Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors

    Directory of Open Access Journals (Sweden)

    Fedorenko O. A.

    2010-03-01

    Full Text Available A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field. It is shown that the method is easily realized and provides the obtaining of thick high-resistance oxide films, that essentially increases the surface electrical resistance of Cd1–xZnxTe-samples and diminishes leakage currents in them.

  15. Measurements of Charge Sharing Effects in Pixilated CZT/CdTe Detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2007-01-01

    In this paper, charge sharing and charge loss effects in pixilated CZT/CdTe detectors are investigated by measurements. We measured charge sharing effects function of the inter-pixel gap (with same pixel pitch), the photon energy and the detector bias voltage for a large numbers of CZT and Cd......Te pixel detector samples. The results are used for the development of the large area X-ray and Gamma ray detector for the Atmosphere-Space Interactions Monitor (ASIM) planned for the ISS ESA Columbus module. Charge sharing measurements on detector samples with identical size and pixel geometry...

  16. Crosstalk of HgCdTe LWIR n-on-p diode arrays

    International Nuclear Information System (INIS)

    Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

    2009-01-01

    Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

  17. Method in analysis of CdZnTe γ spectrum with artificial neural network

    International Nuclear Information System (INIS)

    Ai Xianyun; Wei Yixiang; Xiao Wuyun

    2005-01-01

    The analysis of gamma-ray spectra to identify lines and their intensities usually requires expert knowledge and time consuming calculations with complex fitting functions. CdZnTe detector often exhibits asymmetric peak shape particularly at high energies making peak fitting methods and sophisticated isotope identification programs difficult to use. This paper investigates the use of the neural network to process gamma spectra measured with CdZnTe detector to verify nuclear materials. Results show that the neural network method gives advantages, in particular, when large low-energetic peak tailings are observed. (authors)

  18. Qualification of a new defect revealing etch for CdTe using cathodoluminescence microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Watson, C.C.R.; Durose, K. (Dept. of Physics, Univ. of Durham (United Kingdom)); Banister, A.J. (Dept. of Chemistry, Univ. of Durham (United Kingdom)); O' Keefe, E.; Bains, S.K. (Philips Infrared Defence Components, Southampton (United Kingdom))

    1993-01-30

    The action of a new defect revealing etch comprising a saturated FeCl[sub 3] solution has been investigated. The etch was found suitable for use on (111)A, (anti 1anti 1anti 1)B and other surface orientations of CdTe, and (111)A and (anti 1anti 1anti 1)B surfaces of Cd[sub 0.96]Zn[sub 0.04] Te. Direct correlations with cathodoluminescence and infra-red microscopy have shown the etch to successfully reveal twin boundaries, precipitates and dislocations. A background etch rate of approximately 2 [mu]m min[sup -1] has been measured. (orig.).

  19. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

    International Nuclear Information System (INIS)

    Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

    2008-01-01

    The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

  20. Facile aqueous synthesis and growth mechanism of CdTe nanorods

    International Nuclear Information System (INIS)

    Gong Haibo; Hao Xiaopeng; Gao Chang; Wu Yongzhong; Du Jie; Xu Xiangang; Jiang Minhua

    2008-01-01

    Single-crystal CdTe nanorods with diameters of 50-100 nm were synthesized under a surfactant-assisted hydrothermal condition. The experimental results indicated that with a temporal dependence the morphologies of CdTe nanocrystallites changed from nanoparticles to smooth surface nanorods. The crystal structure, morphology and optical properties of the products were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and fluorescence spectrophotometer. Furthermore, the formation mechanisms of the nanorods were investigated and discussed on the basis of the experimental results.

  1. Design considerations for CdTe Nanotetrapods as electronic devices. krogstrup@fys.ku.dk.

    Science.gov (United States)

    Teich-McGoldrick, S L; Bellanger, M; Caussanel, M; Tsetseris, L; Pantelides, S T; Glotzer, S C; Schrimpf, R D

    2009-11-01

    We investigate the feasibility of using CdTe nanotetrapods as circuit elements using models and simulation at multiple scales. Technology computer-aided design tools are used to simulate the electrical behavior for both metal-semiconductor field-effect transistors and junction field-effect transistors. Our results show that by varying the doping concentrations and material composition, CdTe nanotetrapods have the potential to be useful circuit elements. Monte Carlo simulations provide insight into how control over interparticle and particle-substrate interactions can lead to the directed assembly of ordered arrays of electrically gated nanotetrapods.

  2. Formation Dirac point and the topological surface states for HgCdTe-QW and mixed 3D HgCdTe TI

    Science.gov (United States)

    Marchewka, Michał

    2017-01-01

    In this paper the results of numerical calculations based on the finite difference method (FDM) for the 2D and 3D TI with and without uniaxial tensile strain for mixed Hg1-xCdxTe structures are presented. The numerical calculations were made using the 8×8 model for x from 0 up to 0.155 and for the wide range for the thickness from a few nm for 2D up to 150 nm for 3D TI as well as for different mismatch of the lattice constant and different barrier potential in the case of the QW. For the investigated region of the Cd composition (x value) the negative energy gap (Eg=Γ8-Γ6) in the Hg1-xCdxTe is smaller than in the case of pure HgTe which, as it turns out, has a significant influence on the topological surface states (TSS) and the position of the Dirac point for QW as well as for 3D TI. The results show that the strained gap and the position of the Dirac point against the Γ8 is a function of the x-Cd compounds in the case of the 3D TI as well as the critical width of the mixed Hg1-xCdxTe QW.

  3. Ultrafast spin injection from Cd1-x Mn x Te magnetic barriers into a CdTe quantum well studied by pump-probe spectroscopy

    International Nuclear Information System (INIS)

    Aoshima, I.; Nishibayashi, K.; Souma, I.; Murayama, A.; Oka, Y.

    2006-01-01

    Spin injection from diluted magnetic semiconductor (DMS) barriers of Cd 1- x Mn x Te into a quantum well (QW) of CdTe is studied, by means of pump-probe absorption spectroscopy in magnetic fields. Fast decay characteristics of circularly polarized differential absorbances of spin-polarized excitons in the DMS barrier show the exciton injection time of 6 ps from the barriers into the QW. In accordance with the fast relaxation of the spin-polarized excitons from the barrier, we observe the rise of circular polarization degree for the differential absorption of the CdTe QW in magnetic fields, evidently indicating the spin injection. In addition, the circular polarization degree up to 0.3 is developed in the well immediately after pumping, originating from the fast relaxation of a heavy hole (hh) spin less than 0.2 ps, due to the giant Zeeman effect caused by the penetration of the hh wave function into the DMS barriers

  4. Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

    Science.gov (United States)

    Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

    2017-11-01

    The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

  5. Degradation sources of CdTe thin film PV: CdCl{sub 2} residue and shunting pinholes

    Energy Technology Data Exchange (ETDEWEB)

    Gorji, Nima E. [University of Bologna, Department of Electrical, Electronics and Information Engineering, Bologna (Italy)

    2014-09-15

    The present work considers two observable phenomena through the experimental fabrication and electrical characterization of the rf-sputtered CdS/CdTe thin film solar cells that extremely reduce the overall conversion efficiency of the device: CdCl{sub 2} residue on the surface of the semiconductor and shunting pinholes. The former happens through nonuniform treatment of the As-deposited solar cells before annealing at high temperature and the latter occurs by shunting pinholes when the cell surface is shunted by defects, wire-like pathways or scratches on the metallic back contact caused from the external contacts. Such physical problems may be quite common in the experimental activities and reduce the performance down to 4-5 % which leads to dismantle the device despite its precise fabrication. We present our electrical characterization on the samples that received wet CdCl{sub 2} surface treatment (uniform or nonuniform) and are damaged by the pinholes. (orig.)

  6. Optical characterization of CdSe/ZnTe type-II interfaces for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Richters, Jan-Peter; Bleuse, Joel [CEA-CNRS group ' ' Nanophysique et semiconducteurs' ' , CEA-Grenoble, INAC, SP2M, 17 rue des Martyrs, 38042 Grenoble (France); Gerard, Lionel; Andre, Regis [CEA-CNRS group ' ' Nanophysique et semiconducteurs' ' , Institut Neel, CNRS, BP 166, 38042 Grenoble Cedex 9 (France)

    2012-07-01

    Solar cells based on direct bandgap semiconductors (GaAs,CdTe,CdSe..) show an efficient light absorption compared to silicon solar cells. This is an advantage for material savings due to thinner absorbers, but it also comes with the drawback of higher losses due to efficient radiative electron-hole recombination. Such losses could be prevented through the use of type-II interfaces which separate electrons and holes within the active area, similar to a p-n junction. We report a study of CdSe/ZnTe samples showing such an interface. The CdSe bandgap (1.7 eV) is well adapted to the solar spectrum and its lattice parameter mismatch with ZnTe is exceptionally low. We have grown, by MBE, different kinds of samples like CdSe/ZnTe 2D interfaces and superlattices and present time-resolved spectroscopy results which specify the efficiency of the electron-hole separation in these type-II structures. The measured decay time can be above 100 ns for the interface optical transition, i.e. 3 orders of magnitude slower than the typical PL decay time for the constitutive materials taken separately.

  7. Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

    International Nuclear Information System (INIS)

    Hawkins, Samantha A.; Villa-Aleman, Eliel; Duff, Martine C.; Hunter, Doug B.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R.

    2008-01-01

    CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

  8. Search for TeV gamma rays from SN1987A during December 1987 and January 1988

    International Nuclear Information System (INIS)

    Bond, I.A.; Conway, M.J.; Budding, E.

    1988-04-01

    Very high energy γ rays from the supernova SN1987A were searched for at the Black Birch Range in New Zealand during December 1987 and January 1988. The total data obtained during 42 hours of observation time give an upper bound on the flux at 95 % confidence level of 6.1 x 10 -12 cm -2 s -1 for γ rays with energies larger than 3 TeV. Data obtained on January 14 and 15 are found to have excess counts, above the background level, corresponding to a flux of (1.9 ± 0.5) x 10 -11 cm -2 s -1 . The energy emitted in TeV γ rays, by attributing this excess to γ rays from SN1987A, is calculated ∼ 10 43 erg assuming that the duration of the excess was 2 ∼ 3 days. PACS numbers: 97.60.Bw, 95.85.Qx. (author)

  9. Approaching the r-process "waiting point" nuclei below $^{132}$Sn: quadrupole collectivity in $^{128}$Cd

    CERN Multimedia

    Reiter, P; Blazhev, A A; Nardelli, S; Voulot, D; Habs, D; Schwerdtfeger, W; Iwanicki, J S

    We propose to investigate the nucleus $^{128}$Cd neighbouring the r-process "waiting point" $^{130}$Cd. A possible explanation for the peak in the solar r-abundances at A $\\approx$ 130 is a quenching of the N = 82 shell closure for spherical nuclei below $^{132}$Sn. This explanation seems to be in agreement with recent $\\beta$-decay measurements performed at ISOLDE. In contrast to this picture, a beyond-mean-field approach would explain the anomaly in the excitation energy observed for $^{128}$Cd rather with a quite large quadrupole collectivity. Therefore, we propose to measure the reduced transition strengths B(E2) between ground state and first excited 2$^{+}$-state in $^{128}$Cd applying $\\gamma$-spectroscopy with MINIBALL after "safe" Coulomb excitation of a post-accelerated beam obtained from REX-ISOLDE. Such a measurement came into reach only because of the source developments made in 2006 for experiment IS411, in particular the use of a heated quartz transfer line. The result from the proposed measure...

  10. Reformulated tight binding calculation for band discontinuity at CdTe/Hg {sub x}Cd{sub 1-x}Te heterointerfaces and their type I-type III transitions

    Energy Technology Data Exchange (ETDEWEB)

    Ekpunobi, A.J. [Department of Physics and Industrial Physics, Nnamdi Azikiwe University, P.M.B. 5025, Awka, Anambra State (Nigeria)

    2005-02-25

    A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg {sub x}Cd{sub 1-x}Te interface in the s{sup 2}p{sup 2} configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point.

  11. Fabrication of fluorescence-based biosensors from functionalized CdSe and CdTe quantum dots for pesticide detection

    International Nuclear Information System (INIS)

    Chi Tran, Thi Kim; Vu, Duc Chinh; Thuy Ung, Thi Dieu; Nguyen, Hai Yen; Nguyen, Ngoc Hai; Dao, Tran Cao; Pham, Thu Nga; Nguyen, Quang Liem

    2012-01-01

    This paper presents the results on the fabrication of highly sensitive fluorescence biosensors for pesticide detection. The biosensors are actually constructed from the complex of quantum dots (QDs), acetylcholinesterase (AChE) and acetylthiocholine (ATCh). The biosensor activity is based on the change of luminescence from CdSe and CdTe QDs with pH, while the pH is changed with the hydrolysis rate of ATCh catalyzed by the enzyme AChE, whose activity is specifically inhibited by pesticides. Two kinds of QDs were used to fabricate our biosensors: (i) CdSe QDs synthesized in high-boiling non-polar organic solvent and then functionalized by shelling with two monolayers (2-ML) of ZnSe and eight monolayers (8-ML) of ZnS and finally capped with 3-mercaptopropionic acid (MPA) to become water soluble; and (ii) CdTe QDs synthesized in aqueous phase then shelled with CdS. For normal checks the fabricated biosensors could detect parathion methyl (PM) pesticide at very low contents of ppm with the threshold as low as 0.05 ppm. The dynamic range from 0.05 ppm to 1 ppm for the pesticide detection could be expandable by increasing the AChE amount in the biosensor. (paper)

  12. Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

    2017-04-15

    The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

  13. Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

    International Nuclear Information System (INIS)

    Red’ko, R. A.; Budzulyak, S. I.; Korbutyak, D. V.; Lotsko, A. P.; Vakhnyak, N. D.; Demchyna, L. A.; Kalytchuk, S. M.; Konakova, R. V.; Milenin, V. V.; Bykov, Yu. V.; Egorov, S. V.; Eremeev, A. G.

    2015-01-01

    The effect of microwave radiation on the luminescence properties of CdS and CdTe:Cl single crystals is studied. It is established that the exposure of these semiconductors to short-term (≤30 s) microwave radiation substantially modifies their impurity and defect structure. The mechanisms of transformation of the defect subsystem of II–VI single crystals upon microwave treatment are discussed. It is shown that the experimentally observed changes are defined by the nonthermal effects of microwave radiation at a power density of 7.5 W cm –2 ; at 90 W cm –2 , nonthermal effects are prevailing

  14. Characterization of CBD-CdS layers with different S/Cd ratios in the chemical bath and their relation with the efficiency of CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Jimenez-Escamilla, M.G.; Aguilar-Hernandez, J.; Contreras-Puente, G.; Sastre-Hernandez, J.; Sanchez-Meza, E.; Ramon-Garcia, M.L.

    2007-01-01

    In previous papers we have reported the improvement of the efficiency of CdS/CdTe solar cells by varying the thiourea/CdCl 2 ratio (R tc ) in the chemical bath solution used for the deposition of the CdS layers. In this work, a more complete study concerning the physical properties of Chemical Bath Deposited (CBD) CdS layers studied by photoluminescence, X-ray diffraction and optical spectroscopy are correlated to the I-V characteristics under AM 1.5 sunlight and the spectral response of CdS/CdTe solar cells. It is confirmed that the optimum R tc for the CBD CdS films is R tc = 5, since in this case the best solar cells were obtained and these films show the better optical and structural characteristics

  15. Elaboration of fabrication technology of ITO/CdS/CdTe solar cells on flexible polymer substrates

    International Nuclear Information System (INIS)

    Potlog, T.; Spalatu, N.; Capros, N.

    2007-01-01

    The development of high efficiency, stable, lightweight and flexible solar cell is important for terrestrial and space applications. We have developed a novel process to make solar cells on flexible polymer sheets. A thin layer of CdTe compound semiconductor is used for the absorption of solar light and generation of electrical current. In this work the solar electricity conversion efficiency of 4,66% is the highest efficiency reported for a solar cell grown on a polymer sheet. (authors)

  16. Thermoelectric performance of co-doped SnTe with resonant levels

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Min; Han, Yemao; Li, Laifeng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd. Pasadena, California 91125 (United States); Wang, Heng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); Snyder, G. Jeffrey [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); TMO University, Saint Petersburg 197101 (Russian Federation)

    2016-07-25

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n{sub H}) and extrinsic dopant concentration (N{sub I}, N{sub Ag}) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n{sub H}. Upon substituting extrinsic dopants beyond a certain amount, the n{sub H} changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  17. Design and study of a coplanar grid array CdZnTe detector for improved spatial resolution

    International Nuclear Information System (INIS)

    Ma, Yuedong; Xiao, Shali; Yang, Guoqiang; Zhang, Liuqiang

    2014-01-01

    Coplanar grid (CPG) CdZnTe detectors have been used as gamma-ray spectrometers for years. Comparing with pixelated CdZnTe detectors, CPG CdZnTe detectors have either no or poor spatial resolution, which directly limits its use in imaging applications. To address the issue, a 2×2 CPG array CdZnTe detector with dimensions of 7×7×5 mm 3 was fabricated. Each of the CPG pairs in the detector was moderately shrunk in size and precisely designed to improve the spatial resolution while maintaining good energy resolution, considering the charge loss at the surface between the strips of each CPG pairs. Preliminary measurements were demonstrated at an energy resolution of 2.7–3.9% for the four CPG pairs using 662 keV gamma rays and with a spatial resolution of 3.3 mm, which is the best spatial resolution ever achieved for CPG CdZnTe detectors. The results reveal that the CPG CdZnTe detector can also be applied to imaging applications at a substantially higher spatial resolution. - Highlights: • A novel structure of coplanar grid CdZnTe detector was designed to evaluate the possibility of applying the detector to gamma-ray imaging applications. • The best spatial resolution of coplanar grid CdZnTe detectors ever reported has been achieved, along with good spectroscopic performance. • Depth correction of the energy spectra using a new algorithm is presented

  18. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

    2014-11-12

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  19. Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

    2010-04-15

    A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

  20. Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

    Directory of Open Access Journals (Sweden)

    Juan P Monrás

    Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

  1. The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

    CSIR Research Space (South Africa)

    Gouws, GJ

    1993-05-01

    Full Text Available The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found to be unsuitable due...

  2. Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

    Science.gov (United States)

    Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

    2018-03-01

    Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

  3. Raman scattering in three-cation diluted magnetic semiconductor Cd1-x-yMnxMgyTe

    International Nuclear Information System (INIS)

    Agekyan, V.F.; Gridneva, L.K.; Karpov, S.V.; Serov, A.Yu.

    1995-01-01

    Investigations of Raman scattering (RS) in quaternary compounds were conducted to determine and interpret LO and TO frequencies, characterizing CdTe, MnTe, MgTe components in mixed crystal. Raman spectrum in the range of low frequencies is interpreted as interaction of quasi local vibrations with acoustic continuum

  4. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    International Nuclear Information System (INIS)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

    2014-01-01

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Amplified solid-state electrochemiluminescence detection of cholesterol in near-infrared range based on CdTe quantum dots decorated multiwalled carbon nanotubes@reduced graphene oxide nanoribbons.

    Science.gov (United States)

    Huan, Juan; Liu, Qian; Fei, Airong; Qian, Jing; Dong, Xiaoya; Qiu, Baijing; Mao, Hanping; Wang, Kun

    2015-11-15

    An amplified solid-state electrochemiluminescence (ECL) biosensor for detection of cholesterol in near-infrared (NIR) range was constructed based on CdTe quantum dots (QDs) decorated multiwalled carbon nanotubes@reduced graphene nanoribbons (CdTe-MWCNTs@rGONRs), which were prepared by electrostatic interactions. The CdTe QDs decorated on the MWCNTs@rGONRs resulted in the amplified ECL intensity by ~4.5 fold and decreased onset potential by ~100 mV. By immobilization of the cholesterol oxidase (ChOx) and NIR CdTe-MWCNTs@rGONRs on the electrode surface, a solid-state ECL biosensor for cholesterol detection was constructed. When cholesterol was added to the detection solution, the immobilized ChOx catalyzed the oxidation of cholesterol to generate H2O2, which could be used as the co-reactant in the ECL system of CdTe-MWCNTs@rGONRs. The as-prepared biosensor exhibited good performance for cholesterol detection including good reproducibility, selectivity, and acceptable linear range from 1 μM to 1mM with a relative low detection limit of 0.33 μM (S/N=3). The biosensor was successfully applied to the determination of cholesterol in biological fluid and food sample, which would open a new possibility for development of solid-state ECL biosensors with NIR emitters. Copyright © 2015 Elsevier B.V. All rights reserved.

  7. On the bowing parameter in Cd1-xZnxTe

    International Nuclear Information System (INIS)

    Zelaya-Angel, O.; Mendoza-Alvarez, J.G.; Becerril, M.; Navarro-Contreras, H.; Tirado-Mejia, L.

    2004-01-01

    Cd 1-x Zn x Te thin films were prepared on 7059 Corning glass substrates using an rf magnetron sputtering system and CdTe(1-y)+ZnTe(y) targets. The concentration (x) of Zn in the films did not coincide with the relative weight (y) of the ZnTe powder in the compressed targets. Values of x were in the range 0-0.30 as determined from x-ray diffraction patterns. The band gap energy (E g ) of the Cd 1-x Zn x Te samples was calculated from the photoreflectance spectra measured on the films. The position of the experimental points in the E g versus x plot show a deviation from the phenomenological quadratic relation E g =E g0 +ax+bx 2 calculated within the virtual crystal approximation (VCA). The depart of the E g values for higher Zn concentrations from the expected VCA model is probably due to a larger clustering of Zn atoms and/or a percolation phenomena. We obtain fitted values for the parameters a and b within the VCA approach. Comparison with data reported by other authors is made

  8. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-01

    In this work, we prepared CdTe quantum dots, and series of Cd1-xMnxTe-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd1-xMnxTe-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd1-xMnxTe-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  9. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots.

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-02

    In this work, we prepared CdTe quantum dots, and series of Cd 1-x Mn x Te-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn 2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd 1-x Mn x Te-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd 1-x Mn x Te-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  10. First ever full size CdTE luminescent down-shifting module

    NARCIS (Netherlands)

    Ross, D.; Alonso-Alvarez, D.; Fritsche, J.; Bauer, M.; Debije, M.G.; Fifield, R.M.; Richards, B.S.

    2012-01-01

    For the first time a luminescent down-shifting (LDS) layer has been applied to a full size PV module to improve its short-wavelength response. An average 4.3% relative increase in the short-circuit current density (JSC) was recorded for the Calyxo cadmium telluride (CdTe) modules after the best LDS

  11. Polarization phenomena in Al/p-CdTe/Pt X-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Principato, F., E-mail: fabio.principato@unipa.it; Turturici, A.A.; Gallo, M.; Abbene, L.

    2013-12-01

    Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium and aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by Acrorad (Japan), through electrical and spectroscopic approaches. In particular, we investigated on the time degradation of the spectroscopic response of the detectors at different temperatures, voltages and energies. Current transient measurements were also performed to better understand the properties of the deep acceptor levels and their correlation with the polarization effect.

  12. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  13. The development of drift-strip detectors based on CdZnTe

    DEFF Research Database (Denmark)

    Gostilo, V.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2002-01-01

    The design and technological development of a CdZnTe drift strip detector is described. The device is based on a monocrystal of dimensions 10 x 10 x 3 mm(3) and has a pitch of 200 mum and a strip width of 100 mum. The strip length is 9.5 mm. The distribution of the leakage currents of the strips...

  14. Quantitative measurements of magnetic polaron binding on acceptors in CdMnTe alloys

    Science.gov (United States)

    Nhung, Tran Hong; Planel, R.

    1983-03-01

    The acceptor binding energy is measured as a function of Temperature and composition in Cd1-x Mnx Te alloys, by time resolved spectroscopy. The Bound magnetic polaron effect is measured and compared with a theory accouting for magnetic saturation and fluctuations.

  15. CdTe quantum dots for an application in the life sciences

    International Nuclear Information System (INIS)

    Thuy, Ung Thi Dieu; Toan, Pham Song; Chi, Tran Thi Kim; Liem, Nguyen Quang; Khang, Dinh Duy

    2010-01-01

    This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1

  16. Time resolution improvement of Schottky CdTe PET detectors using digital signal processing

    International Nuclear Information System (INIS)

    Nakhostin, M.; Ishii, K.; Kikuchi, Y.; Matsuyama, S.; Yamazaki, H.; Torshabi, A. Esmaili

    2009-01-01

    We present the results of our study on the timing performance of Schottky CdTe PET detectors using the technique of digital signal processing. The coincidence signals between a CdTe detector (15x15x1 mm 3 ) and a fast liquid scintillator detector were digitized by a fast digital oscilloscope and analyzed. In the analysis, digital versions of the elements of timing circuits, including pulse shaper and time discriminator, were created and a digital implementation of the Amplitude and Rise-time Compensation (ARC) mode of timing was performed. Owing to a very fine adjustment of the parameters of timing measurement, a good time resolution of less than 9.9 ns (FWHM) at an energy threshold of 150 keV was achieved. In the next step, a new method of time pickoff for improvement of timing resolution without loss in the detection efficiency of CdTe detectors was examined. In the method, signals from a CdTe detector are grouped by their rise-times and different procedures of time pickoff are applied to the signals of each group. Then, the time pickoffs are synchronized by compensating the fixed time offset, caused by the different time pickoff procedures. This method leads to an improved time resolution of ∼7.2 ns (FWHM) at an energy threshold of as low as 150 keV. The methods presented in this work are computationally fast enough to be used for online processing of data in an actual PET system.

  17. Photoluminescence from Cd{sub x}Hg{sub 1-x}Te

    Energy Technology Data Exchange (ETDEWEB)

    Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R [Norwegian Defence Research Establishment, P O Box 25, N-2027 Kjeller (Norway)], E-mail: magnus.breivik@gmail.com

    2008-03-15

    We present important aspects of photoluminescence (PL) of Cd{sub x}Hg{sub 1-x}Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd{sub 0.36}Hg{sub 0.64}Te/Cd{sub 0.61}Hg{sub 0.39}Te multiple quantum well structure grown on a 4 {mu}m thick Cd{sub 0.36}Hg{sub 0.64}Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above {approx}200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to {approx}200 K.

  18. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires

    International Nuclear Information System (INIS)

    Neretina, S; Devenyi, G A; Preston, J S; Mascher, P; Hughes, R A; Sochinskii, N V

    2008-01-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires

  19. Thermal Cycle Annealing and its Application to Arsenic-Ion Implanted HgCdTe

    Science.gov (United States)

    2014-06-26

    Rao Mulpuri Sina Simingalam, Priyalal Wijewarnasuriya, Mulpuri V. Rao 1720BH c. THIS PAGE The public reporting burden for this collection of...Implanted HgCdTe Sina Simingalama,b,c, Priyalal Wijewarnasuriyab, Mulpuri V. Raoc a. School of Physics, Astronomy and Computational Sciences, George

  20. Arsenic complexes optical signatures in As-doped HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. [CEA-LETI Minatec Campus, 17 rue des Martyrs, 38000 Grenoble (France)

    2013-04-08

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  1. Monolithic dual-band HgCdTe infrared detector structure

    CSIR Research Space (South Africa)

    Parish, G

    1997-07-01

    Full Text Available A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid...

  2. Comparative study on toxicity of extracellularly biosynthesized and laboratory synthesized CdTe quantum dots

    Czech Academy of Sciences Publication Activity Database

    Komínková, M.; Milosavljevic, V.; Vítek, Petr; Polanská, H.; Číhalová, K.; Dostálová, S.; Hynstová, V.; Guran, R.; Kopel, P.; Richtera, L.; Masarik, M.; Brtnický, M.; Kynický, J.; Zítka, O.; Adam, V.

    2017-01-01

    Roč. 241, JAN (2017), s. 193-200 ISSN 0168-1656 R&D Projects: GA MŠk(CZ) LO1415 Institutional support: RVO:67179843 Keywords : Quantum dots * Biosynthesis * Escherichia coli (E. coli) * CdTe * Toxicity Subject RIV: EI - Biotechnology ; Bionics OBOR OECD: Environmental biotechnology Impact factor: 2.599, year: 2016

  3. Further comments on segregation during Bridgman growth of Cd(x)Hg(1-x)Te

    Science.gov (United States)

    Lehoczky, S. L.; Szofran, F. R.

    1984-01-01

    The authors comment on recent papers published by Capper et al. (1983) and Jones et al. (1983) which report and discuss the variation of composition with axial position in Bridgman-grown Cd(x)Hg(1-x)Te alloys. The validity of a diffusion-controlled model for non-mixing growth conditions is particularly noted.

  4. Characterization of a pixelated CdTe Timepix detector operated in ToT mode

    International Nuclear Information System (INIS)

    Billoud, T.; Leroy, C.; Papadatos, C.; Roux, J.S.; Pichotka, M.; Pospisil, S.

    2017-01-01

    A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55  μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241 Am source, photons from a 137 Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300  μm thick silicon Timepix device. The electron mobility-lifetime product (μ e τ e ) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

  5. Neutron scattering studies of a dilute magnetic semiconductor: Cd1-xMnxTe

    DEFF Research Database (Denmark)

    Steigenberger, Ursula; Lebech, Bente; Galazka, Robert R.

    1986-01-01

    The development of the magnetic ordering in the magnetic semiconductor Cd1-xMnxTe was investigated by elastic neutron scattering. A detailed study of the correlation length and the intensity as a function of temperature, direction in reciprocal space and concentration of the magnetic ions has been...

  6. A stacked CdTe pixel detector for a compton camera

    International Nuclear Information System (INIS)

    Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Ushio, Masayoshi; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu

    2007-01-01

    We are developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. A detector material of combined Si strip and CdTe pixel is used to cover the energy range around 60keV. For energies above several hundred keV, in contrast, the higher detection efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as both an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton camera, we developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton kinematics within the energy band from 122 to 662keV. The energy resolution (FWHM) of reconstructed spectra is 7.3keV at 511keV. The angular resolution obtained at 511keV is measured to be 12.2 deg. (FWHM)

  7. Diagnostic X-ray spectrometry using a commercial CdZnTe detector

    International Nuclear Information System (INIS)

    Becker, P.H.B.

    1998-01-01

    X ray spectrometry using Ge or Si detectors is an established tool to measure characterization parameters of X-ray beams. This work describes how a commercial CdZnTe was used to perform diagnostic X-ray spectrometry. Spectra were measured for two X-ray machines and compared with similar data found in the literature with an agreement of 2% rms

  8. Studies on interaction between CdTe quantum dots and α ...

    Indian Academy of Sciences (India)

    Administrator

    ence of CdTe QDs were also studied. α-Chy can maintain its high activity and stability under different. pH conditions ... creasing attention in the past decade. 1. Because of ... divided into 'poor' and 'good' substrate, depending on their kinetic ...

  9. Performance of CdZnTe coplanar-grid gamma-ray detectors

    International Nuclear Information System (INIS)

    Luke, P.N.; Eissler, E.E.

    1995-11-01

    CdZnTe crystals grown using the high-pressure Bridgman method exhibit many properties that are desirable for radiation detector fabrication, such as high resistivity, stable operation, relative ease of processing, and the availability of large volume crystals. However, as is common with other compound semi-conductor materials, currently available CdZnTe crystals have poor charge transport characteristics. This seriously the spectral performance of detectors, especially in gamma-ray detection. The coplanar-grid detection technique was recently developed to address such charge collection problems. This technique was first demonstrated using a 5 mm cube CdZnTe detector, and a dramatic improvement in spectral response has been achieved. These early results verified the effectiveness of this technique and suggested that large-volume gamma-ray detectors with high energy resolution can be realized. To further the development of such detectors, it is important to understand the various factors that affect detector performance. The purpose of this paper is to examine the effects of material properties on the spectral performance of CdZnTe coplanar-grid detectors. Theoretical spectral response is to show the level of performance that can be achieved given the typical carrier mobility-lifetime (μτ) properties of present-day materials. Nonuniformity in the charge transport properties of the material, which could limit the energy resolution of the detectors, has been studied experimentally and some of the results are presented here

  10. Arsenic complexes optical signatures in As-doped HgCdTe

    International Nuclear Information System (INIS)

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G.

    2013-01-01

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  11. Photoluminescence measurement of polycrystalline CdTe made of high purity source material

    Energy Technology Data Exchange (ETDEWEB)

    Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

    2012-07-01

    CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

  12. Quantitative analysis of polarization phenomena in CdTe radiation detectors

    International Nuclear Information System (INIS)

    Toyama, Hiroyuki; Higa, Akira; Yamazato, Masaaki; Maehama, Takehiro; Toguchi, Minoru; Ohno, Ryoichi

    2006-01-01

    Polarization phenomena in a Schottky-type CdTe radiation detector were studied. We evaluated the distribution of electric field in a biased CdTe detector by measuring the progressive change of Schottky barrier lowering with time. The parameters of deep acceptors such as detrapping time, concentration, and the depth of the energy level were quantitatively evaluated. In the case of applying the conventional model of charge accumulation, the obtained result shows that the CdTe bulk is never undepleted. We modified the charge accumulation model by taking account of the occupation state of the deep acceptor level. When a modified model is applied, the time that the depletion width in the bulk begins to diminish closely fits the time that the photopeak position begins to shift in radiation measurements. In this paper, we present a distribution of electric field during biasing and a simple method for the evaluation of the parameters of deep acceptors in CdTe bulk. (author)

  13. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2018-03-01

    The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

  14. Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

    Science.gov (United States)

    Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

    High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

  15. Quantitative analysis of impurities present in the trace state in CdTe

    International Nuclear Information System (INIS)

    Al-Neami, A.

    1988-01-01

    Impurities in CdTe have been analyzed by PIXE using 3 MeV protons and by 1 MeV Ar ion induced X-ray emission. In the case of PIXE elements with Z > 25 are detected whereas with Ar ions only elements with 13 [fr

  16. CdTe/CZT under high flux irradiation

    International Nuclear Information System (INIS)

    Strassburg, Matthias; Schroeter, Christian; Hackenschmied, Peter

    2011-01-01

    Direct converting quantum counting detectors based on cadmium telluride and cadmium zinc telluride have been investigated with respect to their properties under intense X-ray irradiation. To derive a detailed picture of the performance of such detectors, the influence of the electric field, the detector thickness, the temperature and the intensity of the X-ray irradiation was studied. The results are discussed in terms of the ''polarization'' phenomenon, a reduction of the electric field strength inside the detector due to immobile charge carriers accumulating during irradiation. Furthermore, the impact of Te-inclusions and -precipitates is presented.

  17. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L S; Kenny, M J [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1994-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  18. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1993-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  19. Analysis of the electrical conduction in CdHgTe crystals

    International Nuclear Information System (INIS)

    Dziuba, Z.

    1987-01-01

    The electrical conduction versus magnetic field in p-like CdHgTe samples at 77 K is investigated by analysing the conductivity tensor components. The electrical conduction is mainly due to electrons in the conduction band and low-mobility carriers in an impurity band. In the investigated samples Cd/sub x/Hg/sub 1-x/Te with the composition x approximately 0.17 the concentration of electrons in the conduction band is higher than the intrinsic one and in samples with the composition close to HgTe the concentration of electrons in the conduction band is equal to or lower than the intrinsic one. The model of a half-filled impurity band situated close to the bottom of the conduction band is proposed to account for the concentration of electrons in the conduction band. (author)

  20. Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin

    Science.gov (United States)

    Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

    2011-07-01

    This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO2 NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔIECL) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM~5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via