WorldWideScience

Sample records for carbon nitride thin

  1. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  2. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp2 and sp3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  3. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Science.gov (United States)

    Galeano-Osorio, D. S.; Vargas, S.; López-Córdoba, L. M.; Ospina, R.; Restrepo-Parra, E.; Arango, P. J.

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature ( Troom), 100 °C, 150 °C and 200 °C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 °C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the ID/ IG or sp 3/sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

  4. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    International Nuclear Information System (INIS)

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (Troom), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the ID/IG or sp3/sp2 ratio and not by the absolute sp3 or sp2 concentration.

  5. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Energy Technology Data Exchange (ETDEWEB)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

  6. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Achete, C. A.

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  7. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  8. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  9. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

    2000-07-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  10. Effect of acetic acid on electrochemical deposition of carbon-nitride thin film

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Electrochemical deposition method was employed to prepare CNx thin film from methanol-urea solution,and it was shown that adding a little acetic acid in the solution significantly affected the deposition process.After optimizing the experiment conditions,we obtained polycrystalline grains with sizes of about 3―7μm on the faces of single crystal silicon.X-ray diffraction spectrua indicate that the grains are mainly composed of cubic phase mixed with a small amount of β and α phases.

  11. Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N2+H2 Atmosphere

    Institute of Scientific and Technical Information of China (English)

    YU Wei; WANG Shufang; ZHANG Lianshui; LI Xiaowei; FU Guangsheng

    2001-01-01

    Carbon nitride thin films are deposited on silicon wafers by 532 nm Nd∶YAG laser ablation of graphite in the N2+H2 atmosphere assisted by a dc glow discharge plasma at a higher gas pressure of about 4.0 kPa. The properties of the thin films are investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and X-ray diffraction (XRD). The results show that the deposited films are composed of α-C3N4, β-C3N4 phase and have the N/C atomic ratio of 2.01. The optical emission spectroscopy (OES) studies indicate that the introduction of a dc glow discharge and the adoption of a higher gas pressure during the film deposition are favorable to the net generation of the atomic N, CN radicals and N+2 in B2Σ+u excited state in the plasma, which are considered to play a major role in the synthesis of carbon nitride.

  12. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P, B

    2001-07-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  13. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  14. Laser ablation of molecular carbon nitride compounds

    International Nuclear Information System (INIS)

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C2N4H4), melamine (C3N6H6), and melem (C6N10H6), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials

  15. Laser ablation of molecular carbon nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, D., E-mail: d.fischer@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Schwinghammer, K. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany); Sondermann, C. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Lau, V.W.; Mannhart, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Lotsch, B.V. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany)

    2015-09-15

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C{sub 2}N{sub 4}H{sub 4}), melamine (C{sub 3}N{sub 6}H{sub 6}), and melem (C{sub 6}N{sub 10}H{sub 6}), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials.

  16. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  17. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  18. Microstructure analysis of the iron nitride thin films nitrided on the surface of machinery component materials

    International Nuclear Information System (INIS)

    On this study the ion nitriding process of the machinery component materials, which consist of the piston pen and the piston rings, have been conducted. Ion nitriding of the machinery component materials was performed for some variation of nitriding temperature, nitriding time and pressure of nitrogen gas using DC glow discharge. The optimum hardness of the piston pen samples was obtained at the nitriding temperature of 100°C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.6 mbar, and the hardness value increased approximately six times compared with the non nitrided samples; while the hardness value of the piston ring was increase approximately 2.6 time at the temperature nitriding of 100°C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.2 mbar. To observe the micro-structure and elemental composition of iron nitride thin films formed on the surface of the samples was used SEM-EDAX, and the phase structure of iron nitride thin films was observed by using XRD. Based on the observations was known that a compound layer formed on the surface of samples containing different nitrogen and form the phase structure of γ-Fe4N, ε-Fe3N and ζ-Fe2N that have a very good mechanical properties. (author)

  19. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  20. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CNx) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CNx films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N2/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, Vs, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at Vs ≥ 60 V, Vs ≥ 100 V, and Vs = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of Vs for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all Vs, while CNx films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film

  1. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  2. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  3. Characterization and properties of highly adhesive titanium nitride and tungsten nitride thin films

    International Nuclear Information System (INIS)

    The paper presents results on the physical characteristics and mechanical properties of titanium nitride (TiN) and tungsten nitride (W2N) thin films grown by reactive DC magnetron sputtering. The films were deposited in a system with several magnetron modules of different sputtering materials suitable for deposition of single-layer metal nitride films and multilayer nitride coatings. The deposition conditions were optimized to obtain films with the highest adhesion to substrates of machine steel and sintered hard alloy. The adhesion of the films was measured in dependence on two principal process parameters: the nitrogen partial pressure in the magnetron discharge gas mixture of nitrogen and argon and the substrate temperature. The composition of the TiN films was determined by Auger electron spectroscopy. The microstructure and the crystallization trend of the films were studied by transmission electron microscopy and selected area electron diffraction. The hardness of the films was examined using standard measuring methods

  4. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  5. Magnetron sputtering of thin nitride films

    OpenAIRE

    Kola, Prashanthi V

    1995-01-01

    The objective in this investigation was to design and commission a magnetron sputter deposition system and investigate the properties of hard coatings for mechanical and biomedical applications. The deposition of titanium (Ti) and titanium nitride (TiN) was undertaken as part of the commissioning tests and further work was conducted on the effect of the deposition parameters on the properties of TiN, specifically for biocompatible applications. A thorough understanding of the deposition proce...

  6. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-06-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  7. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms. PMID:27251325

  8. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    International Nuclear Information System (INIS)

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo2N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C

  9. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  10. A chromium nitride/carbon nitride containing graphitic carbon nanocapsule hybrid as a Pt-free electrocatalyst for oxygen reduction.

    Science.gov (United States)

    Zhao, Lu; Wang, Lei; Yu, Peng; Zhao, Dongdong; Tian, Chungui; Feng, He; Ma, Jing; Fu, Honggang

    2015-08-11

    Chromium nitride nanoparticles supported on graphitic carbon nanocapsules containing carbon nitride (CrN/GC) have been synthesized by a solvothermal-assisted ion-exchange route. As a Pt-free catalyst, the CrN/GC hybrid exhibits superior activity, stability, methanol immunity and a dominant 4-electron pathway towards oxygen reduction reaction. PMID:26145711

  11. Thin boron nitride nanotubes formed during annealing in ammonia gas

    International Nuclear Information System (INIS)

    Full text: We present a mechano-thermal process to synthesis thin boron nitride nanotubes of diameter around 7 nanometers. They were produced by mechanical milling of amorphous boron powder at ambient temperature, followed by thermal annealing in ammonia gas. High energy ball milling creates a precursor containing a high density of nanocrystalline BN seeds and fine particles of metal catalyst. Nanotubes grow out from the milled boron powder during subsequent annealing. The novelty of this approach lies in the formation of the thin BN nanotubes by annealing in ammonia gas instead of nitrogen gas. The boron nitride nanotubes produced have a well-defined crystalline structure and there is no iron within them. If nitrogen gas is used, thicker nanotubes of diameter in the range of 20-100 nm were obtained and iron was more likely to be found inside the nanotubes. Copyright (2005) Australian Institute of Physics

  12. Beryllium nitride thin film grown by reactive laser ablation

    OpenAIRE

    G. Soto; Diaz, J.A.; Machorro, R.; Reyes-Serrato, A.; de la Cruz, W.

    2001-01-01

    Beryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss (EELS) spectroscopies. A low absorption coefficient in the visible region, and an optical bandgap of 3.8 eV, determined by reflectance ellipsometry, were obtained for films grown at nitrogen pressures higher than 25 mTorr. The results show that the reaction ...

  13. Preparation of carbon-nitride bulk samples in the presence of seed carbon-nitride films

    International Nuclear Information System (INIS)

    A procedure was developed for preparing bulk carbon-nitride crystals from polymeric α-C3N4.2 at high pressure and high temperature in the presence of seeds of crystalline carbon-nitride films prepared by using a high-voltage discharge plasma combined with pulsed laser ablation of a graphite target. The samples were evaluated by using X-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrated that the nitrogen composition in the α-C3N4.2 material, which initially contained more than 58 % nitrogen, decreased during the annealing process and reached a common, stable composition of ∼ 45 %. The thermobaric experiments were performed at 10 - 77 kbar and 350 - 1200 .deg. C.

  14. Grafting titanium nitride surfaces with sodium styrene sulfonate thin films.

    Science.gov (United States)

    Zorn, Gilad; Migonney, Véronique; Castner, David G

    2014-09-01

    The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxy-nitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were ∼1.5 and ∼1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 ± 70 ng/cm(2). PMID:25280842

  15. Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption

    International Nuclear Information System (INIS)

    Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency (RF) magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Synthesis of hollow carbon nitride microspheres by an electrodeposition method

    International Nuclear Information System (INIS)

    Hollow carbon nitride microspheres have been synthesized using a novel liquid phase electrodeposition technique. The microspheres are composed of numerous nanoparticles with size of about 5-30 nm. The diameters of the spheres range from 800 nm to 1.1 μm, and shell thickness is about 80-250 nm. This is the first attempt to synthesize carbon nitride with specific nanostructure by the electrodeposition method, which is proved to be facile and effective, and can be performed in an atmospheric environment and at a rather low temperature. The hollow carbon nitride may have potential applications as lubrication, catalysis, biomolecule adsorption, drug delivery, electronic materials, etc. in the future.

  17. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

    Science.gov (United States)

    Sowers, A. T.; Christman, J. A.; Bremser, M. D.; Ward, B. L.; Davis, R. F.; Nemanich, R. J.

    1997-10-01

    Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

  18. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)

    2000-01-01

    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...... by replacement of the nitride ions with oxide ions in the molten carbonate electrolyte....

  19. Magnetron sputter deposited tantalum and tantalum nitride thin films: An analysis of phase, hardness and composition

    International Nuclear Information System (INIS)

    Tantalum (Ta) and tantalum nitride thin films are highly important as diffusion barriers and adhesion layers in microelectronics and hard coatings for cutting tools. In this study, the effect of the underlying substrate on the phase formation of Ta and the influence of a changing N2/Ar flow ratio on hardness, phase and composition of reactively formed tantalum nitride have been investigated. Ta is DC sputter deposited and forms β-Ta on amorphous diamond-like carbon and on the amorphous natural oxide layers of Ti and Si(100) while a 15 nm TaN seed layer results in the formation of α-Ta. The chemical composition of the topmost layers of a substrate influences the formation of α- and β-Ta. With increasing N2/Ar flow ratios a transition from amorphous Ta-rich tantalum nitride over face-centered cubic tantalum nitride (fcc-TaN) to (100) textured fcc-TaN at flow ratios above 45% is observed. The hardness of the tantalum nitride thin film reaches a maximum at a flow ratio of 45%, followed by a decrease in hardness for higher N2/Ar flow ratios. The increase in hardness is associated with a decrease in grain size and shows a stronger correlation for a Meyers and Ashworth relationship than for a Hall–Petch relationship. - Highlights: • Chemical composition of the substrate influences the phase of deposited Ta. • FCC-TaN seed layer leads to α-Ta on the natural oxide layers of Ti and Si(100). • Meyers and Ashworth relationship correlates stronger than Hall–Petch relationship

  20. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

    Science.gov (United States)

    Lee, Kang Hyuck; Shin, Hyeon-Jin; Kumar, Brijesh; Kim, Han Sol; Lee, Jinyeong; Bhatia, Ravi; Kim, Sang-Hyeob; Lee, In-Yeal; Lee, Hyo Sug; Kim, Gil-Ho; Yoo, Ji-Beom; Choi, Jae-Young; Kim, Sang-Woo

    2014-10-20

    Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. PMID:25204810

  1. Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

    International Nuclear Information System (INIS)

    Highlights: → C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. → RF plasma treatment enables nitriding for non-heated substrates. → The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. → Nitrogen plasma active species diffuse into the samples and lead to the formation of FexN. → The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N2 gas. Surface characterizations before and after N2 plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 μm for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV0.005 at a plasma processing time of 8 h.

  2. Effects of methane in the deposition of superconducting niobium nitride thin films at ambient substrate temperature

    International Nuclear Information System (INIS)

    Thin films of the niobium-carbon-nitrogen system have been prepared at ambient substrate temperature by rf diode reactive sputtering in an argon-nitrogen atmosphere with controlled amounts of methane added to the sputter gas. Superconducting transition temperatures ranged from approximately 11 to 15.85 0K. Auger and x-ray diffraction analysis indicate that all films were of the single phase B1 structure with a small amount of ν-phase hexagonal structure in the very low carbon containing films. A correlation of the superconducting properties, room temperature sheet resistance, preferred crystallite orientation, and film composition was observed. The results of this investigation show that high T/sub c/ niobium nitride/niobium carbonitride thin films can be prepared at ambient substrate temperatures with the proper amount of nitrogen and methane partial pressures during film deposition. These films have potential application for the fabrication of high T/sub c/ Josephson tunnel junctions

  3. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  4. Effects of experimental conditions on the growth of vertically aligned carbon nitride nanocone arrays

    International Nuclear Information System (INIS)

    Vertically aligned carbon nitride nanocone (CNNC) arrays were prepared on Ni-covered (100) silicon wafers by an abnormal glow discharge plasma assisted chemical vapor deposition method. In order to control the growth of the CNNC arrays, the distance of the anode tip to the substrate surface was adjusted for it affected the contents and activities of the species in the plasmas leading to the CNNC growth. Based on the characterization of the as-grown thin films and the analysis of the growth environments, the effects of the experimental conditions on the growth of the CNNC arrays were studied and their growth mechanism was discussed. The tip−substrate distance strongly affects the CNNC growth. Under appropriate experimental conditions, the vertically-aligned and intact CNNC arrays with the β-C3N4 microstructure and the minimum tip curvature diameter of only 3–4 nm could be fabricated. This kind of CNNC arrays have many potential applications, such as tips for microscopes, electron-emitting units in field emission displays, electron-capture electrodes of solar cells etc. - Highlights: ►Vertically aligned carbon nitride nanocone arrays were prepared. ►An abnormal glow discharge plasma assisted chemical vapor deposition method. ►Tip-substrate distance strongly affects the growth of carbon nitride nanocones. ►The growth mechanism of carbon nitride nanocones is discussed

  5. DFT Studies on Electronic Structures of Boro-Nitride-Carbon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    YAN Ming; HUANG Chun-Hui

    2005-01-01

    In this paper, the configurations of Boro-Nitride-Carbon nanotubes with BNC2 composition were optimized by ROHF method. According to the density functional theory, the electronic structures of Boro-Nitride-Carbon nanotubes were calculated by DFT/ROB3LYP method. By analyzing the energy gap, density of electronic state and bonding maps of atoms, the conductive properties of Boro-Nitride-Carbon nanotubes were obtained, and compared with those of carbon nanotubes and other Boro-Nitride nanotubes.

  6. Symmetric organization of self-assembled carbon nitride

    International Nuclear Information System (INIS)

    A scheme for creating 'flower-like' nanostructures of carbon nitride is described that involves the self-assembly of nanocrystals following laser ablation of a solid graphite target immersed in aqueous ammonia solution. The primary nanocrystals possess rod-like symmetry, and then self-assemble upon drying to form nanoleaf or nanopetal shaped structures. Samples were characterized using x-ray diffraction (XRD), transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), x-ray photoelectron microscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The analyses confirmed their composition to be consistent with that of crystalline β-phase carbon nitride. The morphologies of the carbon nitride nanostructures depended strongly on the synthesis conditions and upon the conditions under which the aqueous suspension of ablated particles were dried

  7. Structure and Thermal Stability of Copper Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Guangan Zhang

    2013-01-01

    Full Text Available Copper nitride (Cu3N thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.

  8. Real time ellipsometric study of boron nitride thin film growth

    International Nuclear Information System (INIS)

    The authors present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PEVCD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on in-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trajectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. The authors applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sophisticated model considering a variable refractive index could better describe these films

  9. Characterization of tantalum nitride thin films synthesized by magnetron sputtering

    Science.gov (United States)

    Zaman, Anna

    Tantalum Nitride is chemically inert, oxidation resistant and hard. TaN finds its application as a protective coating on steel due to their excellent wear properties. It has become a very promising diffusion barrier material in Cu interconnect technology in microelectronics. TaN has not been analyzed as much as other transition metal nitrides like the TiN system because TaN exhibits various stable and metastable phases. The emergence of these phases and the different physical, chemical and mechanical properties depend on the growth technique and deposition conditions. TaN thin films were deposited using the magnetron PVD system in the SaNEL lab. The aim of this study was to identify the effect of processing parameters like N2/Ar ratio, substrate bias and temperature, on the emergence of the different phases present in TaN thin films and the effect of deposition conditions on the mechanical properties of these films. The phases present in the films, deposited at varying conditions were explored via low angle X-Ray Diffraction (XRD), hardness of the films was measured by Nanoindentation and tribological tests were carried out to measure the frictional and wear behavior. It was observed that at high percentage of Nitrogen (10%-25%) the main phase present was FCC TaN and as the nitrogen content was decreased a mixture of phases was present in these films. The hardness of the films increases as we decrease the Nitrogen content, yielding a film with a hardness of 37.1 GPa at 3% N2 with a substrate bias voltage of -100 V.

  10. Superconducting niobium nitride thin films by reactive pulsed laser deposition

    International Nuclear Information System (INIS)

    The structural, electronic, and nanomechanical properties of cubic niobium nitride thin films were investigated. The films were deposited on Si(100) under different background nitrogen gas pressures (26.7-66.7 Pa) at constant substrate temperature of 800 °C by reactive pulsed laser deposition. Our results reveal that the NbNx films exhibit a cubic δ-NbN with strong (111) orientation and highly-oriented textured structures. We find nitrogen background pressure to be an important factor in determining the structure of the NbNx films. The dependence of the electronic structure as well as that of the superconducting transition temperature (Tc) on the nitrogen gas background pressure is studied. A correlation between surface morphology, electronic and superconducting properties is found for the deposited NbNx thin films. The highly-textured δ-NbN films have a Tc up to 15.07 K. Nanoindentation with continuous stiffness method is used to evaluate the hardness and modulus of the NbNx thin films as a function of depth. The film deposited at nitrogen background pressure of 66.7 Pa exhibits improved superconducting properties and shows higher hardness values as compared to films deposited at lower nitrogen pressures. - Highlights: • NbN thin films were deposited on Si(100) using reactive pulse laser deposition. • Different nitrogen background pressures were used. • Increasing nitrogen gas pressure impacts the phase and superconducting properties. • Thin NbN films with superconducting phase showed transition temperature up to 15.07 K

  11. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  12. Templateless Infrared Heating Process for Fabricating Carbon Nitride Nanorods with Efficient Photocatalytic H2 Evolution.

    Science.gov (United States)

    Li, Hui-Jun; Qian, Dong-Jin; Chen, Meng

    2015-11-18

    The bottom-up fabrication of carbon nitride nanorods is realized through the direct infrared heating of dicyandiamide. The approach requires no templates or extra organics. The controlled infrared heating has a major influence on the morphology of the obtained carbon nitrides. The precursors assemble into carbon nitride nanorods at low power levels, and they grow into nanoplates at high power levels. The formation mechanism of the carbon nitride nanorods is proposed to be a kinetically driven process, and the photocatalytic activity of the carbon nitride nanorods prepared at 50% power for hydrogen evolution is about 2.9 times that of carbon nitride nanoplates at 100% power. Structural, optical, and electronic analysis demonstrates that the enhancement is primarily attributed to the elimination of structural defects and the improved charge-carrier separation in highly condensed and oriented carbon nitride nanorods. PMID:26501184

  13. Preparation and characterization of morph-genetic aluminum nitride/carbon composites from filter paper

    International Nuclear Information System (INIS)

    Morph-genetic aluminum nitride/carbon composites with cablelike structure were prepared from filter paper template through the surface sol-gel process and carbothermal nitridation reaction. The resulting materials have a hierarchical structure originating from the morphology of cellulose paper. The aluminum nitride/carbon composites have the core-shell microstructure, the core is graphitic carbon, and the shell is aluminum nitride nanocoating formed by carbothermal nitridation reduction of alumina with the interfacial carbon in nitrogen atmosphere. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscope were employed to characterize the structural morphology and phase compositions of the final products

  14. Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

    International Nuclear Information System (INIS)

    Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

  15. Tribological properties of sputtered tungsten and tungsten nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Wong; K.M.; ShenY.G.; Wong; P.L.

    2001-01-01

    The surface roughness, hardness and tribological properties of tungsten (W) and tung-sten nitride (WNx) thin films prepared by dc magnetron sputtering and reactive magnetron sputter-ing in Ar-N2 gas mixtures have been studied using atomic force microscopy (AFM), nanoindenta-tion measurements and ball-on-disc wear testing. A pronounced surface roughness was observedonly for films under compressive strains. The surface was flat under tension but rough under com-pression. Similar hardness with value about 20 GPa were observed in the W and WNx (x=0.3)films. This is thought to be due to the fact the grains are restricted to a very small size in the coat-ings. The higher coefficients of friction (0.4 for W and 0.9 for WN0.3) suggest that WN0.3 is not theoptimum phase. Finally, discussions are made with tribological test results.

  16. Reactive DC Magnetron Sputtering Deposition of Copper Nitride Thin Film

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Copper nitride thin film was deposited on glass substrates by reactive DC (direct current) magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were (111) and (200) at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu (111) peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality (111) Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.

  17. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

    2011-10-15

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  18. Interface study between nanostructured tantalum nitride films and carbon nanotubes grown by chemical vapour deposition

    International Nuclear Information System (INIS)

    Highlights: • Our paper deals with the understanding of the carbon nanotubes growth parameters following the use of specific thin nitride buffer films. • For a large choice of buffer, we use ultra thin films elaborated by the very new method: high power pulsed magnetron sputtering; it allows a larger nitrogen incorporation in the films and lead to out of equilibrium phase formation. • Then by a multiscale investigation, developing a structural, a chemical and a morphology approach, we lead to some conclusion on the correlation between the phase transition for the buffer and morphology transition for the CNTs. • That is a new and deep approach. - Abstract: We present the role of nitrogen content in tantalum nitride ultra-thin buffers, on the carbon nanotubes (CNTs) growth by chemical vapour deposition at 850 °C, assisted by ferrocene as catalyst source. Tantalum nitride (TaNx) films with a very large range of concentration x = [0, 1.8] and various nanostructures, from amorphous Ta(N) to Ta3N5, were deposited by Highly Pulsed Plasma Magnetron Sputtering. The buffer films are characterized after heat treatment at 850 °C, and after the CNT growth, by wide angle X-ray scattering in grazing incidence and scanning electron microscopy. The CNT diameter explored by transition electron microscopy shows an all-out value for under stoichiometric thin films (Ta1-N1−δ, Ta3-N5−δ) and a minimum value just above the stoichiometric phases (Ta1-N1+δ, Ta3-N5+δ). Firstly one shows that the buffer films under the heat treatment present surface modification highly dependent on their initial state, which influences the catalyst particles diffusion. Secondly at the stoichiometric TaN phase we show that a specific ternary phase FeTa2O6 is formed at the interface CNT/buffer, not present in the other cases, leading to a special CNT growth condition

  19. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  20. Thermal and quantum phase slips in niobium-nitride nanowires based on suspended carbon nanotubes

    Science.gov (United States)

    Masuda, Kohei; Moriyama, Satoshi; Morita, Yoshifumi; Komatsu, Katsuyoshi; Takagi, Tasuku; Hashimoto, Takayuki; Miki, Norihisa; Tanabe, Takasumi; Maki, Hideyuki

    2016-05-01

    Superconducting nanowires have attracted considerable attention due to their unique quantum-mechanical properties, as well as their potential as next-generation quantum nanodevices, such as single-photon detectors, phase-slip (PS) qubits, and other hybrid structures. In this study, we present the results of one-dimensional (1D) superconductivity in nanowires fabricated by coating suspended carbon nanotubes with a superconducting thin niobium nitride (NbN) film. In the resistance-temperature characteristic curves, hallmarks of 1D superconductivity with PS events are observed with unconventional negative magnetoresistance. We also confirm that a crossover occurs between thermal and quantum PSs as the temperature is lowered.

  1. Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

    OpenAIRE

    Li, Weifeng; Yang, Yanmei; Zhou, Hongcai; Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be...

  2. On new allotropes and nanostructures of carbon nitrides

    OpenAIRE

    Bojdys, Michael Janus

    2010-01-01

    In the first section of the thesis graphitic carbon nitride was for the first time synthesised using the high-temperature condensation of dicyandiamide (DCDA) – a simple molecular precursor – in a eutectic salt melt of lithium chloride and potassium chloride. The extent of condensation, namely next to complete conversion of all reactive end groups, was verified by elemental microanalysis and vibrational spectroscopy. TEM- and SEM-measurements gave detailed insight into the well-defined morpho...

  3. Observation of high stressed hydrogenated carbon nitride films by SLEEM

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Müllerová, Ilona; Sobota, Jaroslav

    Brno : Institute of Scientific Instruments AS CR, v.v.i, 2012 - (Mika, F.), s. 43-44 ISBN 978-80-87441-07-7. [International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /13./. Skalský dvůr (CZ), 25.06.2012-29.06.2012] Institutional support: RVO:68081731 Keywords : SLEEM * hydrogenated carbon nitride films Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  4. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    OpenAIRE

    Hernández-Torres, J.; Gutierrez-Franco, A.; P. G. González; L. García-González; Hernandez-Quiroz, T.; Zamora-Peredo, L.; V.H. Méndez-García; A. Cisneros-de la Rosa

    2016-01-01

    Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the ...

  5. Plasma enhanced chemical vapor deposition of zirconium nitride thin films

    International Nuclear Information System (INIS)

    Depositions of high quality zirconium nitride, (Zr3N4), films using the metal-organic precursor Zr(NEt2)4 were carried out in a microwave argon/ammonia plasma (2.45 GHz). The films were deposited on crystalline silicon wafers and quartz substrates at temperatures of 200--400 C. The transparent yellow films have resistivity values greater than MΩ cm. The stoichiometry is N/Zr = 1.3, with less than 5 atom % carbon and little or no oxygen. The hydrogen content is less than 9 atom %, and it does not vary with deposition temperature. The growth rates range from 600 to 1,200 angstrom/min, depending on the flow rates and precursor bubbler temperature. X-ray diffraction studies show a Zr3N4 film deposited at 400 C is polycrystalline with some (220) orientation. The crystallite size is approximately 30 angstrom. The band gap, as estimated from transmission spectra, is 3.1 eV

  6. Silicon nitride thin-films by RF sputtering : application on solid state lithium batteries

    OpenAIRE

    Sousa, R.; Ribeiro, J. F.; Sousa, J. A.; Montenegro, R. T.; L.M. Gonçalves; Correia, J.H.

    2013-01-01

    Silicon nitride is the most common barrier material to protect microsystems from atmosphere, usually deposited through CVD techniques. In this paper our aim is to highlight the advantages brought by using PVD techniques, namely RF sputtering, to deposit silicon nitride thin-films. In particular, we intend to protect microsystems fabricated only by PVD techniques and avoid the necessity of a second CVD chamber to do the microsystem coating. The influence of gases (Ar/N2) during deposition was ...

  7. Growth of atomically thin hexagonal boron nitride films by diffusion through a metal film and precipitation

    International Nuclear Information System (INIS)

    Atomically thin hexagonal boron nitride films were grown on both the top and bottom surfaces of a polycrystalline Co or Ni film by annealing a Co (Ni)/amorphous boron nitride/SiO2 structure in vacuum. This method of growing hexagonal boron nitride is much simpler than other methods, such as thermal chemical vapour deposition. B and N atoms diffuse through the metal film, although N is almost completely insoluble in both Co and Ni, and precipitation occurs at the topmost surface. The mass transport is considered to be caused by grain boundary diffusion.

  8. Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oliphant, C.J. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Arendse, C.J., E-mail: cjarendse@uwc.ac.za [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Muller, T.F.G. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Jordaan, W.A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Knoesen, D. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa)

    2015-01-30

    Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas. - Highlights: • Tantalum filament degrades and fails during hot-wire CVD of silicon nitride thin films. • An encapsulating silicon nitride layer is deposited at the cooler ends. • Electron backscatter diffraction reveals Ta-silicides and -nitrides with a Ta core. • Filament failure occurs at hot centre regions due to different mechanical properties of Ta, its silicides and nitrides.

  9. Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

    International Nuclear Information System (INIS)

    Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas. - Highlights: • Tantalum filament degrades and fails during hot-wire CVD of silicon nitride thin films. • An encapsulating silicon nitride layer is deposited at the cooler ends. • Electron backscatter diffraction reveals Ta-silicides and -nitrides with a Ta core. • Filament failure occurs at hot centre regions due to different mechanical properties of Ta, its silicides and nitrides

  10. Humidity resistant hydrogenated carbon nitride films

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Polčák, J.; Sobota, Jaroslav; Müllerová, Ilona; Peřina, Vratislav; Caha, O.

    2013-01-01

    Roč. 275, 15 June (2013), s. 7-13. ISSN 0169-4332 R&D Projects: GA MŠk ED0017/01/01 Institutional support: RVO:68081731 ; RVO:61389005 Keywords : thin films * corrosion behanior * delamination * stress Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BH - Optics, Masers, Lasers (UJF-V) Impact factor: 2.538, year: 2013

  11. Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

    OpenAIRE

    Zorn, Gilad; MIGONNEY, Véronique; Castner, David G.

    2014-01-01

    The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulf...

  12. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    Science.gov (United States)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  13. Chemical preparation and shock wave compression of carbon nitride precursors

    International Nuclear Information System (INIS)

    Two synthetic routes have been developed to produce high-molecular-weight organic precursors containing a high weight fraction of nitrogen. One of the precursors is a pyrolysis residue of melamine-formaldehyde resin. The second precursor is the byproduct of an unusual low-temperature combustion reaction of tetrazole and its sodium salt. These precursors have been shock compressed under typical conditions for diamond and wurtzite boron nitride synthesis in an attempt to recover a new ultrahard carbon nitride. The recovered material has been analyzed by X-ray diffraction, FTIR, and Raman microprobe analysis. Diamond is present in the recovered material. This diamond is well ordered relative to diamond shock synthesized from carbonaceous starting materials

  14. Mathematical Model of Prediction of Nitrogen Pickup in Nitriding Process of Low Carbon Ferromanganese

    OpenAIRE

    Ghali, Saeed

    2014-01-01

    Low carbon ferromanganese was nitrided through gas-solid reaction. The nitriding process has been carried out on lab scale at temperature range 800°C–950°C at different nitrogen pressures. Temperature, time, and partial nitrogen pressure of nitriding process of fine low carbon ferromanganese were investigated. Nitrogen content, in weight percent, was more than 9%. MATLAB software was used to derive mathematical model to predict nitrogen content as a function of temperature and nitrogen pressu...

  15. Plasma-Chemical Synthesis of Nanosized Powders-Nitrides, Carbides, Oxides, Carbon Nanotubes and Fullerenes

    International Nuclear Information System (INIS)

    In this article the plasma-chemical synthesis of nanosized powders (nitrides, carbides, oxides, carbon nanotubes and fullerenes) is reviewed. Nanosized powders - nitrides, carbides, oxides, carbon nanotubes and fullerenes have been successfully produced using different techniques, technological apparatuses and conditions for their plasma-chemical synthesis. (plasma technology)

  16. Preparation and characterization of boron nitride/carbon fiber composite with high specific surface area

    International Nuclear Information System (INIS)

    Boron nitride can be used as a good catalyst carrier because of its high thermal conductivity and chemical stability. However, a high specific surface area of boron nitride is still desirable. In this work, a carbon fiber composite coated with boron nitride villous nano-film was prepared, and was also characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and Brunauer-Emmett-Teller analysis. The results indicated that the carbon fibers were covered by uniform villous boron nitride films whose thickness was about 150 - 200 nm. The specific surface area of the boron nitride/carbon fiber composite material was 96 m2 g-1, which was markedly improved compared with conventional boron nitride materials. (orig.)

  17. Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

    CERN Document Server

    Li, Weifeng; Zhou, Hongcai; Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be achieved by modulating the nanopores under tensile strain. The water permeability can be improved by two orders of magnitude compared to RO membranes, which offers a promising approach to the global water shortage solution.

  18. Carbon nanotube quantum dots on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Baumgartner, A., E-mail: andreas.baumgartner@unibas.ch; Abulizi, G.; Gramich, J.; Schönenberger, C. [Institute of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel (Switzerland); Watanabe, K.; Taniguchi, T. [National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  19. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad

    2016-02-22

    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  20. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  1. Improvement of orthodontic friction by coating archwire with carbon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Wei Songbo [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shao Tianmin, E-mail: shaotm@mail.tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Ding Peng [Department of Orthodontics, Peking University School and Hospital of Stomatology, Beijing 100081 (China)

    2011-10-01

    In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp{sup 2} carbon dominated structures, and diversiform bonds (N-C, N{identical_to}C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp{sup 2}C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

  2. Improvement of orthodontic friction by coating archwire with carbon nitride film

    International Nuclear Information System (INIS)

    In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp2 carbon dominated structures, and diversiform bonds (N-C, N≡C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp2C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

  3. Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

    International Nuclear Information System (INIS)

    Graphical abstract: Highlights: · Simultaneous thermal oxidation and nitridation of sputtered Zr thin film on Si using N2O gas. · Oxidized and nitrided layers consisted of a stacked stoichiometric Zr-O (ZrO2) layer on an interfacial layer with related mixed compounds. · Model related to the oxidation and nitridation mechanisms. - Abstract: Formation of ZrO2 by simultaneous thermal oxidation and nitridation in nitrous oxide of sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate and followed by oxidation and nitridation in nitrous oxide ambient at 700 deg. C for various durations (5-20 min) have been systematically investigated. The structural and chemical properties of the samples were examined. Chemical depth profiles of the samples have been evaluated by X-ray photoelectron spectroscopy. Stoichiometric Zr-O (ZrO2) and its interfacial layer consisted of mixed sub-stoichiometric Zr-O, Zr-N, Zr-Si-O, Si-N, and/or Si-O-N phases were identified. A possible model related to the oxidation and nitridation mechanisms has been proposed and explained. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, Raman spectroscopy and Fourier Transform infrared analysis.

  4. Electronic structure of carbon-boron nitride nanotubes

    Science.gov (United States)

    Sanginés-Mendoza, Raúl; Martinez, Edgar

    2013-03-01

    Structures of carbon and boron nitride nanotubes (CNTs, BNNTs) are quite similar, conversely, electronic properties are radically different from each other. Carbon nanotubes, whose electronic properties can be either metallic or semiconducting depending on their chiral structure, boron nitride nanotubes are always semiconductors with bandgaps over 4 eV. We have looked to hybrid systems, to predict a new kind of nanostructures with novel electronic properties. In this way, we explore the electronic properties of C-BN nanotubes. In particular, we studied the electronic structure of armchair C-BN nanotubes. The calculations were performed using the pseudopotential LCAO method with a Generalized Gradient Approximation for the exchange-correlation energy functional. The band structure of most of these systems have semiconductor character with an indirect gap smaller than its analogous BNNTs. In addition, the most prominent feature of these systems is the existence of flat bands both at the valence band top and at the conduction band minimum. Such flat bands results in sharp and narrow peaks on the total density of states. The behavior of these flat bands mainly indicates that electrons are largely localized. Thus, a detailed analysis on the electronic band structure shows that hybridization between those orbitals on the interfaces is responsible to exhibit localization effects on the hybrid systems.This research was supported by Conacyt under Grant No. 133022.

  5. Electrophoretic Deposition of Carbon Nitride Layers for Photoelectrochemical Applications.

    Science.gov (United States)

    Xu, Jingsan; Shalom, Menny

    2016-05-25

    Electrophoretic deposition (EPD) is used for the growth of carbon nitride (C3N4) layers on conductive substrates. EPD is fast, environmentally friendly, and allows the deposition of negatively charged C3N4 with different compositions and chemical properties. In this method, C3N4 can be deposited on various conductive substrates ranging from conductive glass and carbon paper to nickel foam possessing complex 3D geometries. The high flexibility of this approach enables us to readily tune the photophysical and photoelectronic properties of the C3N4 electrodes. The advantage of this method was further illustrated by the tailored construction of a heterostructure between two complementary C3N4, with marked photoelectrochemical activity. PMID:27148889

  6. Multipactor suppressing titanium nitride thin films analyzed through XPS and AES

    International Nuclear Information System (INIS)

    Cathodic-magnetron-deposited titanium nitride films were grown on anodized aluminum substrates and studied via AES and XPS spectroscopies to determine their depth-dependence composition. As it is well known, the native oxide grown on aluminum does not make the substrate impervious to radio frequency damage, and typically a thin film coating is needed to suppress substrate damage. In this article we present the profile composition of titanium nitride films, used as a protective coating for aluminum, that underwent prior conditioning through anodization, observed after successive sputtering stages. (Author)

  7. Optomechanical and Crystallization Phenomena Visualized with 4D Electron Microscopy: Interfacial Carbon Nanotubes on Silicon Nitride

    OpenAIRE

    Flannigan, David J.; Zewail, Ahmed H.

    2010-01-01

    With ultrafast electron microscopy (UEM), we report observation of the nanoscopic crystallization of amorphous silicon nitride, and the ultrashort optomechanical motion of the crystalline silicon nitride at the interface of an adhering carbon nanotube network. The in situ static crystallization of the silicon nitride occurs only in the presence of an adhering nanotube network, thus indicating their mediating role in reaching temperatures close to 1000 °C when exposed to a train of laser pulse...

  8. Effects of applied radio frequency power on low-temperature catalytic-free nanostructured carbon nitride films by rf PECVD

    Science.gov (United States)

    Ritikos, Richard; Othman, Maisara; Abdul Rahman, Saadah

    2016-06-01

    Low-temperature catalytic-free carbon nitride, CN x nanostructured thin films were produced by using radio frequency (rf) plasma-enhanced chemical vapor deposition employing a parallel-plate electrode configuration. The effects of varying applied rf power, P rf (30-100 W), on the formation of these structures were studied. Aligned nanostructured CN x films were produced at P rf as low as 40 W, but uniform highly vertical-aligned CN x nanorods were produced at P rf of 60 and 80 W. This was induced by the presence of high ion bombardment on the growing films and the preferential bonding of isonitrile to aromatic bonds in the nanostructures. It was also observed that nitrogen incorporation is highest in this range and the structure and bonding in the nanostructure reflects those of typical polymeric/amorphous carbon nitride films.

  9. Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

    International Nuclear Information System (INIS)

    Sn nitride thin films are remarkable materials that can be implemented in applications such as microelectronic devices and recording media. This paper presents the analysis of the various Sn nitride thin films' structural, electrical, and chemical properties using a surface profiler, X-ray diffraction, a 4-point probe, X-ray photoelectron spectroscopy (XPS), and distilled water and ethylene glycol contact angle measurements. The Sn nitride thin films were prepared via radio frequency magnetron sputtering. The thickness of Sn nitride thin films decreased in the regions where N2 gas ratios ranged from 20% to 100%. The surface resistance decreased from 6.34 × 104 to 56.2 Ω/sq with gradual increasing of N2 gas ratios from 20% to 100%. Change in crystallinity of the films was observed as N2 gas was progressively introduced, from metallic Sn to the amorphous Sn nitride phase. The high resolution XPS spectra indicates that the intensity of Sn2+ increased, while those of Sn4+ and Sn0 decreased with increasing N2 gas ratios, confirming the bond formation of Sn and N. The total surface free energy (SFE) varied by changing the N2 gas ratio. When the N2 gas ratio in the sputter gas was low (less than 20%), the dominant contributing factor to the total SFE switched from polar to dispersive SFE. In samples where the N2 gas ratio was over 20%, the major contribution to the total SFE was dispersive SFE. - Highlights: • Control oxidation state of Sn and SnN. • Surface energy changed with N2 ratios. • The dominant phase of SnN was controlled by change of N2 gas ratio

  10. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  11. Proceedings of the symposium on silicon nitride and silicon dioxide thin insulating films

    International Nuclear Information System (INIS)

    This symposium volume is divided into five sections: Charge trapping in multilayer insulating films; New applications of insulating films: neural networks; silicon dioxide and silicon nitride films; Processing and radiation damage; and Hot carrier phenomena. A central theme of the symposium was the combined use of silicon nitride and silicon dioxide as a dielectric system. Silicon nitride often contains other species,such as oxygen, which form oxynitrides, and this leads to a wide variety of process recipes. A variety of standard applications are discussed, such as gate dielectrics in nonvolatile memory devices, interpoly dielectrics, and ultra-thin gate dielectrics for the next generation of devices. New applications are introduced, such as long time constant devices for new information processing circuits known as neural networks

  12. Influence of strain on thermal conductivity of silicon nitride thin films

    International Nuclear Information System (INIS)

    We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)−1 at zero strain to 0.34 W (m K)−1 at about 2.4% tensile strain. We propose that such strong strain–thermal conductivity coupling is due to strain effects on fraction–phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens. (paper)

  13. Optical and Electronic Properties of 2D Graphitic Carbon-Nitride and Carbon Enriched Alloys

    Science.gov (United States)

    Therrien, Joel; Li, Yancen; Schmidt, Daniel; Masaki, Michael; Syed, Abdulmannan

    The two-dimensional form of graphitic carbon-nitride (gCN) has been successfully synthesized using a simple CVD process. In it's pure form, the carbon to nitrogen ratio is 0.75. By adding a carbon bearing gas to the growth environment, the C/N ratio can be increased, ultimately reaching the pure carbon form: graphene. Unlike attempts at making a 2D alloy system out of BCN, the CN system does not suffer from phase segregation and thus forms a homogeneous alloy. The synthesis approach and electronic and optical properties will be presented for the pure gCN and a selection of alloy compositions.

  14. Investigations of the properties of thin-layer silicon nitride

    International Nuclear Information System (INIS)

    The plasma-induced deposition of silicon nitride films from a gas mixture of ammonia, silane and argon leads to the incorporation of considerable amounts of hydrogen that can be bonded to both silicon and nitrogen. The amount of hydrogen and its chemical bond is essentially determined by the deposition temperature and the concentration ratio of the reactants. Qualitative and quantitative analyses of hydrogen were performed by IR spectroscopy and secondary mass ion spectroscopy. In addition, the passivation behavior of Sisub(x)Nsub(y)Hsub(z) films towards sodium was investigated by a tracer method using 22Na. (author)

  15. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  16. Visible-light photocatalytic activity of nitrided TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Camps, Enrique, E-mail: enrique.camps@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, Mexico DF 11801 (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, Mexico DF 11801 (Mexico); Camacho-Lopez, Marco Antonio [Laboratorio de Investigacion y Desarrollo de Materiales Avanzados, Facultad de Quimica, UAEM, km 14.5 Carretera Toluca-Atlacomulco (Mexico); Casados, Dora A. Solis [Centro de Investigacion en Quimica Sustentable, Facultad de Quimica, UAEM, km 14.5 Carretera Toluca-Atlacomulco (Mexico)

    2010-10-25

    TiO{sub 2} thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO{sub 2} films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO{sub 2} and nitrided TiO{sub 2} films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO{sub 2} films had photocatalytic activity, while the unnitrided films did not.

  17. Visible-light photocatalytic activity of nitrided TiO2 thin films

    International Nuclear Information System (INIS)

    TiO2 thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO2 films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO2 and nitrided TiO2 films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO2 films had photocatalytic activity, while the unnitrided films did not.

  18. Graphitic carbon nitride "reloaded": emerging applications beyond (photo)catalysis.

    Science.gov (United States)

    Liu, Jian; Wang, Hongqiang; Antonietti, Markus

    2016-04-21

    Despite being one of the oldest materials described in the chemical literature, graphitic carbon nitride (g-C3N4) has just recently experienced a renaissance as a highly active photocatalyst, and the metal-free polymer was shown to be able to generate hydrogen under visible light. The semiconductor nature of g-C3N4 has triggered tremendous endeavors on its structural manipulation for enhanced photo(electro)chemical performance, aiming at an affordable clean energy future. While pursuing the stem of g-C3N4 related catalysis (photocatalysis, electrocatalysis and photoelectrocatalysis), a number of emerging intrinsic properties of g-C3N4 are certainly interesting, but less well covered, and we believe that these novel applications outside of conventional catalysis can be favorably exploited as well. Thanks to the general efforts devoted to the exploration and enrichment of g-C3N4 based chemistry, the boundaries of this area have been possibly pushed far beyond what people could imagine in the beginning. This review strives to cover the achievements of g-C3N4 related materials in these unconventional application fields for depicting the broader future of these metal-free and fully stable semiconductors. This review starts with the general protocols to engineer g-C3N4 micro/nanostructures for practical use, and then discusses the newly disclosed applications in sensing, bioimaging, novel solar energy exploitation including photocatalytic coenzyme regeneration, templating, and carbon nitride based devices. Finally, we attempt an outlook on possible further developments in g-C3N4 based research. PMID:26864963

  19. Transverse electric surface mode in atomically thin Boron-Nitride.

    Science.gov (United States)

    Merano, Michele

    2016-06-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analyzed in terms of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic nonradiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric nonradiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 μm and an intensity-propagation distance greater than 2 cm. PMID:27244441

  20. Transverse electric surface mode in atomically thin Boron–Nitride

    Science.gov (United States)

    Merano, Michele

    2016-06-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analysed in term of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic non-radiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric non-radiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 microns and an intensity-propagation distance greater than 2 cm.

  1. Transverse electric surface mode in atomically thin Boron-Nitride

    CERN Document Server

    Merano, Michele

    2016-01-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analysed in term of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic non-radiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric non-radiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 microns and an intensity-propagation distance greater than 2 cm.

  2. Atomic-Resolution Observations of Semi-Crystalline Integranular Thin Films in Silicon Nitride

    OpenAIRE

    Ziegler, Alexander; Idrobo, Juan C.; Cinibulk, Michael K.; Kisielowski, Christian; Nigel D. Browning; Ritchie, Robert O.

    2005-01-01

    The thin intergranular phase in a silicon nitride (Si3N4) ceramic, which has been regarded for decades as having an entirely amorphous morphology, is shown to have a semi-crystalline structure. Using two different but complementary high-resolution electron microscopy methods, the intergranular atomic structure was directly imaged at the atomic level. These high-resolution images show that the atomic arrangement of the dopand element cerium takes very periodic positions not only along the...

  3. Field Emission from Amorphous carbon Nitride Films Deposited on silicon Tip Arrays

    Institute of Scientific and Technical Information of China (English)

    李俊杰; 郑伟涛; 孙龙; 卞海蛟; 金曾孙; 赵海峰; 宋航; 孟松鹤; 赫晓东; 韩杰才

    2003-01-01

    Amorphous carbon nitride films (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function ( F = 0.024 eV)of electron field emission than that on silicon wafer ( F = 0.060 e V), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.

  4. Phenyl-Modified Carbon Nitride Quantum Dots with Distinct Photoluminescence Behavior.

    Science.gov (United States)

    Cui, Qianling; Xu, Jingsan; Wang, Xiaoyu; Li, Lidong; Antonietti, Markus; Shalom, Menny

    2016-03-01

    A novel type of quantum dot (Ph-CN) is manufactured from graphitic carbon nitride by "lining" the carbon nitride structure with phenyl groups through supramolecular preorganization. This approach requires no chemical etching or hydrothermal treatments like other competing nanoparticle syntheses and is easy and safe to use. The Ph-CN nanoparticles exhibit bright, tunable fluorescence, with a high quantum yield of 48.4 % in aqueous colloidal suspensions. Interestingly, the observed Stokes shift of approximately 200 nm is higher than the maximum values reported for carbon nitride based fluorophores. The high quantum yield and the large Stokes shift are related to the structural surface organization of the phenyl groups, which affects the π-electron delocalization in the conjugated carbon nitride networks and induces colloidal stability. The remarkable performance of the Ph-CN nanoparticles in imaging is demonstrated by a simple incubation study with HeLa cells. PMID:26880237

  5. Evidence for a low-compressibility carbon nitride polymorph elaborated at ambient pressure and mild temperature

    OpenAIRE

    Goglio, Graziella; Foy, Denis; Pechev, Stanislav; Majimel, Jérôme; Demazeau, Gérard; Guignot, Nicolas; Andrault, Denis

    2009-01-01

    International audience Superhard materials like diamond are essential for abrasive or cutting tool applications. In this way, carbon nitrides are of relevant interest because they are expected to exhibit exceptional mechanical properties, high values of bulk modulus being predicted. A smart and simple method was used to synthesize carbon nitrides and allowed elaborating a low-compressibility polymorph. The processing consists in the decomposition of commercial thiosemicarbazide (H2NC(S)N2H...

  6. Hydrogen Storage in Boron Nitride and Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Takeo Oku

    2014-12-01

    Full Text Available Boron nitride (BN nanomaterials were synthesized from LaB6 and Pd/boron powder, and the hydrogen storage was investigated by differential thermogravimetric analysis, which showed possibility of hydrogen storage of 1–3 wt%. The hydrogen gas storage in BN and carbon (C clusters was also investigated by molecular orbital calculations, which indicated possible hydrogen storage of 6.5 and 4.9 wt%, respectively. Chemisorption calculation was also carried out for B24N24 cluster with changing endohedral elements in BN cluster to compare the bonding energy at nitrogen and boron, which showed that Li is a suitable element for hydrogenation to the BN cluster. The BN cluster materials would store H2 molecule easier than carbon fullerene materials, and its stability for high temperature would be good. Molecular dynamics calculations showed that a H2 molecule remains stable in a C60 cage at 298 K and 0.1 MPa, and that pressures over 5 MPa are needed to store H2 molecules in the C60 cage.

  7. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    Directory of Open Access Journals (Sweden)

    J. Hernández-Torres

    2016-01-01

    Full Text Available Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with CNx films located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant D band. ID/IG ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.

  8. Method for making thin carbon foam electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Pekala, R.W.; Mayer, S.T.; Kaschmitter, J.L.; Morrison, R.L.

    1999-08-03

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material is disclosed. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  9. Method for making thin carbon foam electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Pekala, Richard W. (Pleasant Hill, CA); Mayer, Steven T. (San Leandro, CA); Kaschmitter, James L. (Pleasanton, CA); Morrison, Robert L. (Modesto, CA)

    1999-01-01

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  10. Spotting 2D atomic layers on aluminum nitride thin films

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  11. Pulsed laser deposition of niobium nitride thin films

    International Nuclear Information System (INIS)

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase

  12. Pulsed laser deposition of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ufuktepe, Yüksel, E-mail: ufuk@cu.edu.tr [Department of Physics, University of Cukurova, 01330 Adana (Turkey); Myneni, Ganapati, E-mail: rao@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  13. The electrical properties of sulfur-implanted cubic boron nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Qin Yang; Kong Le; Yang Xue-Liang; Li Ting; Zhao Wei-Ping; Yang Ping

    2012-01-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions.The implantation energy of the ions is 19 keV,and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2.The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃.The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders,and the activation energy of c-BN thin films is 0.18 eV.

  14. Influence of process parameters on properties of reactively sputtered tungsten nitride thin films

    International Nuclear Information System (INIS)

    Tungsten nitride (WNx) thin films were produced by reactive dc magnetron sputtering of tungsten in an Ar-N2 gas mixture. The influence of the deposition power on the properties of tungsten nitride has been analyzed and compared with that induced by nitrogen content variation in the sputtering gas. A combined analysis of structural, electrical and optical properties on thin WNx films obtained at different deposition conditions has been performed. It was found that at an N2 content of 14% a single phase structure of W2N films was formed with the highest crystalline content. This sputtering gas composition was subsequently used for fabricating films at different deposition powers. Optical analysis showed that increasing the deposition power created tungsten nitride films with a more metallic character, which is confirmed with resistivity measurements. At low sputtering powers the resulting films were crystalline whereas, with an increase of power, an amorphous phase was also present. The incorporation of an excess of nitrogen atoms resulted in an expansion of the W2N lattice and this effect was more pronounced at low deposition powers. Infrared analysis revealed that in WNx films deposited at low power, chemisorbed N2 molecules did not behave as ligands whereas at high deposition power they clearly appeared as ligands around metallic tungsten. In this study, the influence of the most meaningful deposition parameters on the phase transformation reaction path was established and deposition conditions suitable for producing thermally stable and highly crystalline W2N films were found.

  15. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    Science.gov (United States)

    Román, W. S.; Riascos, H.; Caicedo, J. C.; Ospina, R.; Tirado-Mejía, L.

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si3N4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm-2, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm-1 for B - N bonding and bands around 1700 cm-1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si3N4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si3N4/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  16. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    International Nuclear Information System (INIS)

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si3N4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm-2, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm-1 for B - N bonding and bands around 1700 cm-1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si3N4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si3N4/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  17. Low temperature synthesis of silicon nitride thin films deposited by VHF/RF PECVD for gas barrier application

    Science.gov (United States)

    Lee, Jun S.; Shin, Kyung S.; Sahu, B. B.; Han, Jeon G.

    2015-09-01

    In this work, silicon nitride (SiNx) thin films were deposited on polyethylene terephthalate (PET) substrates as barrier layers by plasma enhanced chemical vapor deposition (PECVD) system. Utilizing a combination of very high-frequency (VHF 40.68 MHz) and radio-frequency (RF 13.56 MHz) plasmas it was possible to adopt PECVD deposition at low-temperature using the precursors: Hexamethyldisilazane (HMDSN) and nitrogen. To investigate relationship between film properties and plasma properties, plasma diagnostic using optical emission spectroscopy (OES) was performed along with the film analysis using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). OES measurements show that there is dominance of the excited N2 and N2+ emissions with increase in N2 dilution, which has a significant impact on the film properties. It was seen that all the deposited films contains mainly silicon nitride with a small content of carbon and no signature of oxygen. Interestingly, upon air exposure, films have shown the formation of Si-O bonds in addition to the Si-N bonds. Measurements and analysis reveals that SiNx films deposited with high content of nitrogen with HMDSN plasma can have lower gas barrier properties as low as 7 . 3 ×10-3 g/m2/day. Also at Chiang Mai University.

  18. Radio frequency reactive sputtering for deposition of aluminium nitride thin films

    International Nuclear Information System (INIS)

    An aluminium target is reactively sputtered in an argon-nitrogen mixture. The influence of nitrogen on the electrical characteristics of the discharge are studied in the conducted experiments. Ionization is intensified in nitrogen, deposition rate is decreased in these conditions and a tentative interpretation is given. A study of nitridation is made and shows that synthesis reaction occurs on the substrate. For a set of deposition conditions, a critical rate of deposition is found. Below this rate, films are aluminium nitride. This critical rate is linearly depending on the amount of nitrogen in the gaseous mixture. Films are characterized as AlN by electrical, optical and crystallographic studies. Dielectric constant, losses, dielectric breakdown, optical index and infrared transmittance spectrum are investigated versus deposition parameters, particularly deposition rate and film thickness. Dielectric properties of AlN thin films prepared by RF reactive sputtering are interesting for use in microelectronics. (author)

  19. Nano Indentation Inspection of the Mechanical Properties of Gold Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Armen Verdyan

    2007-10-01

    Full Text Available The morphology and the local mechanical properties of gold nitride thin films were studied by atomic force microscope (AFM. Gold nitride films were deposited for the first time on silicon substrate without any buffer layer at room temperature by reactive pulsed laser ablation deposition (RPLD. The films were fabricated on (100 Si wafers by RPLD technique in which KrF excimer laser was used to ablate a gold target in N2 atmosphere (0.1 GPa-100 Pa and ambient temperature. Scanning electron microscopy (SEM and atomic force microscopy inspections showed that the films were flat plane with rms roughness in the range of 35.1 nm-3.6 nm, depending on the deposition pressure. Rutherford backscattering spectrometry (RBS and energy dispersion spectroscopy (EDS used to detect the nitrogen concentration in the films, have revealed a composition close to Au3N. The film

  20. Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

  1. Ligand-Free Noble Metal Nanocluster Catalysts on Carbon Supports via "Soft" Nitriding.

    Science.gov (United States)

    Liu, Ben; Yao, Huiqin; Song, Wenqiao; Jin, Lei; Mosa, Islam M; Rusling, James F; Suib, Steven L; He, Jie

    2016-04-13

    We report a robust, universal "soft" nitriding method to grow in situ ligand-free ultrasmall noble metal nanocatalysts (UNMN; e.g., Au, Pd, and Pt) onto carbon. Using low-temperature urea pretreatment at 300 °C, soft nitriding enriches nitrogen-containing species on the surface of carbon supports and enhances the affinity of noble metal precursors onto these supports. We demonstrated sub-2-nm, ligand-free UNMNs grown in situ on seven different types of nitrided carbons with no organic ligands via chemical reduction or thermolysis. Ligand-free UNMNs supported on carbon showed superior electrocatalytic activity for methanol oxidation compared to counterparts with surface capping agents or larger nanocrystals on the same carbon supports. Our method is expected to provide guidelines for the preparation of ligand-free UNMNs on a variety of supports and, additionally, to broaden their applications in energy conversion and electrochemical catalysis. PMID:27014928

  2. Dip coating of boron nitride thin films on nicalon fibers

    International Nuclear Information System (INIS)

    This paper discusses a process involving dip coating of ceramic fibers in H3BO3 solution followed by reaction with NH3 has resulted in the formation of a BN coating on Nicalon and a carbon coated Nicalon fiber. BN coated C-Nicalon fiber maintained its strength during the coating process, while the BN coated Nicalon did not

  3. Mesoporous Metal-Containing Carbon Nitrides for Improved Photocatalytic Activities

    Directory of Open Access Journals (Sweden)

    Jie Luo

    2013-01-01

    Full Text Available Graphitic carbon nitrides (g-C3N4 have attracted increasing interest due to their unusual properties and promising applications in water splitting, heterogeneous catalysis, and organic contaminant degradation. In this study, a new method was developed for the synthesis of mesoporous Fe contained g-C3N4 (m-Fe-C3N4 photocatalyst by using SiO2 nanoparticles as hard template and dicyandiamide as precursor. The physicochemical properties of m-Fe-C3N4 were thoroughly investigated. The XRD and XPS results indicated that Fe was strongly coordinated with the g-C3N4 matrix and that the doping and mesoporous structure partially deteriorated its crystalline structure. The UV-visible absorption spectra revealed that m-Fe-C3N4 with a unique electronic structure displays an increased band gap in combination with a slightly reduced absorbance, implying that mesoporous structure modified the electronic properties of g-Fe-C3N4. The photocatalytic activity of m-Fe-C3N4 for photodegradation of Rhodamine B (RhB was much higher than that of g-Fe-C3N4, clearly demonstrating porous structure positive effect.

  4. Mechanical properties of hybrid boron nitride-carbon nanotubes

    Science.gov (United States)

    Zhang, Jin; Wang, Chengyuan

    2016-04-01

    Hybrid boron nitride-carbon nanotubes (BN-CNTs) have attracted considerable attention in recent research. In this effort, molecular dynamics simulations were performed to study the fundamentals of BN-CNTs in tensile tests, i.e. Young’s modulus and fracture strength (strain). Particular attention was paid to the influence of the atomic structure, hybrid style, and BN concentration on the tensile properties. The morphological changes were also investigated for the BN-CNTs at the onset of fracture. It is noted that the Young’s modulus of BN-CNTs decreases almost linearly with increasing the BN concentration with a rate of change independent of the hybrid style. In contrast, the sensitivity of the fracture strength and fracture strain to the variation of BN concentration depends strongly on the hybrid style of BN-CNTs. These results are expected to significantly expand the knowledge of the elastic and fracture properties of novel nanostructures and facilitate their applications in bandgap-engineering.

  5. Synthesis of beta carbon nitride nanosized crystal through mechanochemical reaction

    CERN Document Server

    Yin Long Wei; Liu Yu Xian; Sui Jin Ling; Wang Jing Min

    2003-01-01

    Nanosized beta carbon nitride (beta-C sub 3 N sub 4), of grain size several tens of nanometres, has been synthesized by mechanochemical reaction processing. The low-cost synthetic method developed facilitates the novel and effective synthesis of nanosized crystalline beta-C sub 3 N sub 4 (a = 6.36 A, c = 4.648 A) powders. The graphite powders were first milled to a nanoscale state, then the nanosized graphite powders were milled in an atmosphere of NH sub 3 gas. It was found that nanosized beta-C sub 3 N sub 4 was formed after high-energy ball milling under an NH sub 3 atmosphere. After thermal annealing, the shape of the beta-C sub 3 N sub 4 changes from flake-like to sphere-like. The nanosized beta-C sub 3 N sub 4 formed was characterized by x-ray diffraction, Fourier transformation infrared spectroscopy, and transmission electron microscopy. A solid-gas reaction mechanism was proposed for the formation of nanosized beta-C sub 3 N sub 4 at room temperature induced by mechanochemical activation.

  6. Improvement in surface properties with TiN thin film coating on plasma nitride austenitic 316 stainless steel

    OpenAIRE

    Pankaj Kumar Singh; Arbind Kumar; Sanjay Kumar Sinha; Aman Aggarwal; Gajendra Prasad Singh

    2016-01-01

    The surface of the austenitic 316 stainless steel was modified by using two processes, i.e, dc glow discharge plasma and RF magnetron sputtering. The plasma nitriding was carried out at 500°C under 3 mbar pressure for 5 h in presence of 4N2:1H2 gas mixture. A thin layer of TiN was coated on plasma nitrided samples by using RF magnetron sputtering.The phase formation, nitride layer, surface nanohardness and corrosion current density were evaluated by X-ray diffractogram, optical microscope and...

  7. Structural characterization of thin films of titanium nitride deposited by laser ablation

    International Nuclear Information System (INIS)

    Thin films of titanium nitride were deposited using the technique of laser ablation. It was studied the effect of the density of laser energy used for ablation the target as well as of the pressure of the work gas about the structure and the hardness of the deposited thin films. Depending on the pressure of the work gas films was obtained with preferential orientation in the directions (200) and (111). At a pressure of 1 x 10-2 Torr only the direction (200) was observed. On the other hand to the pressure of 5 x 10-3 Torr the deposited material this formed by a mixture of the orientation (200) and (111), being the direction (111) the predominant one. Thin films of Ti N were obtained with hardness of up to 24.0 GPa that makes to these attractive materials for mechanical applications. The hardness showed an approximately linear dependence with the energy density. (Author)

  8. Behavior of joining interface between thin film metallic glass and silicon nitride at heating

    International Nuclear Information System (INIS)

    Thin film metallic glass is usually deposited directly on a substrate. The strength of the adhesive join between the substrate surface and the thin film metallic glass is important for fabrication of micro- and/or nano-electromechanical systems. The strength of the join is especially affected by the stresses at the interface, created by the thermal history during the fabrication process and/or during use. In the present study, a bimetallic cantilever of silicon nitride film with a Pd-based thin film metallic glass was fabricated and heated under vacuum in order to generate high stresses at the joining interface. The behavior at the interface were observed and analyzed in terms of the projected length of the cantilever

  9. Conformational analysis and electronic structure of chiral carbon and carbon nitride nanotubes

    Directory of Open Access Journals (Sweden)

    Cristiano Geraldo de Faria

    2011-12-01

    Full Text Available Geometry and electronic structure of chiral carbon and carbon nitride (CNx nanotubes were investigated through quantum chemical methods. Finite nanotubes with diameters ranging from 5 to 10 Å and containing up to 500 atoms were considered. CNx structures were built through random substitution of carbon atoms by nitrogen. The molecules were fully optimized by semi-empirical quantum chemical method (PM3. Our results show that the energy associated with nitrogen incorporation depends strongly upon the tube helicity and diameter. The doping of nanotubes with nitrogen contributes to reduce the stress caused by the small diameter of the studied systems. Density of States (DOS results for pure carbon and CNx nanostructures, obtained through DFT and Hartree-Fock calculations, were analyzed. The introduction of nitrogen in the tube produce states in the gap region which characterizes the metallic behavior, as expected for these systems after N-doping.

  10. Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

    International Nuclear Information System (INIS)

    High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp3 bonds is significant. 15 refs., 5 figs

  11. Recent progress in the synthesis and characterization of amorphous and crystalline carbon nitride coatings

    CERN Document Server

    Widlow, I

    2000-01-01

    This review summarizes our most recent findings in the structure and properties of amorphous and crystalline carbon nitride coatings, synthesized by reactive magnetron sputtering. By careful control of the plasma conditions via proper choice of process parameters such as substrate bias, target power and gas pressure, one can precisely control film structure and properties. With this approach, we were able to produce amorphous carbon nitride films with controlled hardness and surface roughness. In particular, we can synthesize ultrathin (1 nm thick) amorphous carbon nitride films to be sufficiently dense and uniform that they provide adequate corrosion protection for hard disk applications. We demonstrated the strong correlation between ZrN (111) texture and hardness in CN sub x /ZrN superlattice coatings. Raman spectroscopy and near-edge X-ray absorption show the predominance of sp sup 3 -bonded carbon in these superlattice coatings.

  12. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  13. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    International Nuclear Information System (INIS)

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures

  14. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Facultad de Mecánica, Escuela Politécnica Nacional (EPN), Ladrón de Guevara E11-253, Quito (Ecuador); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Huerta, Lazaro [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Lartundo-Rojas, Luis [Centro de Nanociencias y Micro y Nanotecnologías—IPN, Luis Enrique Erro s/n, U. Prof. Adolfo López Mateos, 07738 Ciudad de Mexico, Distrito Federal (Mexico); Santoyo-Salazar, Jaime [Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07360 (Mexico); and others

    2015-03-15

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.

  15. Gallium Nitride Thin Films Containing Rare Earth Ions Fabricated by Magnetron Sputtering

    Czech Academy of Sciences Publication Activity Database

    Prajzler, V.; Huttel, I.; Špirková, J.; Hamáček, J.; Machovič, V.; Oswald, J.; Peřina, Vratislav; Havránek, Vladimír

    University of Aveiro : MEDIAMIRA, Cluj-Napoca, 2005 - (Ali, N.; Gracio, J.; Jakson, M.), s. 202-204 ISBN 973-713-065-0. [International Conference on Surfaces, Coatings and Nanostructured Materials - nanoSMat2005. Aveiro (PT), 07.09.2005-09.09.2005] R&D Projects: GA ČR(CZ) GA104/03/0385; GA ČR(CZ) GA104/03/0387 Institutional research plan: CEZ:AV0Z10480505 Keywords : gallium nitride * thin films Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  16. Liquid nitrogen to room temperature thermometry using niobium nitride thin films

    OpenAIRE

    Bourgeois, Olivier; André, Emmanuel; Macovei, Cristina; Chaussy, Jacques

    2006-01-01

    Niobium nitride thin film thermometry has been developed for the temperature range of 70K to 300K. The deposition parameters have been optimized in order to get the best performances, i.e. the highest temperature coefficient of resistance (TCR), up to 300K. The TCR is found to be largely higher than 1% as the temperature is lowered from 300K, up to 6% at 77K. These significant performances are compared to the one of regular platinum thermometer as well as to other resistive thermometer: semic...

  17. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    OpenAIRE

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; J.K. Rath; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, as well as thin film silicon single junction and multijunction junction solar cells. The application of HW-SiNx at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cell...

  18. Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

    International Nuclear Information System (INIS)

    We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si3N4, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 μm2) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques

  19. Radio-frequency sputter deposition of boron nitride based thin films

    International Nuclear Information System (INIS)

    Thin films (∼2 μm) of boron nitride, titanium boron nitride, and titanium aluminum boron nitride have been grown on molybdenum, niobium, and cemented carbide substrates employing nonreactive as well as reactive rf magnetron sputter deposition from either a BN, a TiN-BN, or a TiN--AlN--BN target. Substrates have been rf biased, with dc potentials up to -200 V. By means of nonreactive sputtering mixed-phase structures with dominant phases B48B2N2 (using a BN target), or B48B2N2 and hexagonal Ti--B--N (using a TiN--BN or a TiN--AlN--BN target) are formed. Reactive deposition leads to the existence of hexagonal BN in all deposition modes. In the cases of Ti--B--N and Ti--Al--B--N films this phase is accompanied by fcc Ti--B--N. SEM cross sections revealed very fine grained to fracture-amorphous film structures. Hardness measurements gave the following maximum HV 0.02 values: B--N films 2800, Ti--B--N films 2750, and Ti--Al--B--N films 1650

  20. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  1. Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) thin films have been grown on Si by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N2 plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C+ ions, C atoms, C2, N2; and CN radicals, and N2+ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the 'four-probe-test method' determining sheet resistivity and correlating surface conductivity with chemical composition.

  2. Thermal Contact Conductance Analysis of Nitride and Carbonitride Thin Film Coatings for Thermal Interface Material Application

    Science.gov (United States)

    Subramani, Shanmugan; Thing, Lee Yuan; Devarajan, Mutharasu

    2015-12-01

    In order to reduce and maintain the bond line thickness between substrate and LED package, solid thin film with good thermal conductivity is suggested as thermal interface material and the proposed film thickness is about less than 1 µ. The surface parameter such as roughness and hardness is a key factor which alters the contact conductance between the two matt surfaces. Consequently, filtered vacuum cathodic arc deposited nitride thin films (CrN, TiN, AlTiN, and TiCN) on copper substrate were tested for thermal interface material applications in electronic packaging. The thermal contact conductance of the prepared thin films was evaluated using surface properties such as microhardness and surface roughness. The results were verified with the theoretical model. The measured microhardness and surface roughness of CrN thin film are 17 GPa (low) and 0.768 µm (high), respectively. The measured thermal contact conductance of all thin films showed linear properties for applied pressure and very close to the values of theoretical model. High value in thermal contact conductance of about 256 W/m2 K was noticed with CrN thin film at 1100 kPa. The percentage of deviation for our measured contact conductance value from the theoretical model value was decreasing for the increased contact pressure and observed low value (7 pct) for CrN thin film at 1100 kPa. The thermal conductivity of all thin films was also calculated from the conductance model and observed high value (19.34 W/mK) with CrN thin film.

  3. Influence of plasma nitriding on the hardness of AISI 304 and low carbon steel

    International Nuclear Information System (INIS)

    Nitriding with plasma/ion nitriding technique for surface treatment of AISI 304 and low carbon steel as a machine component material has been done. Surface treatment is meant to improve the surface quality of metal especially its hardness. To reach the optimum condition it has been done a variation of nitriding pressure, while to analyse the result it has been done the hardness and microstructure test, and the nitrogen content. Result of the test indicates that: the optimum hardness obtained at 1.8 mbar of pressure that is 624.9 VHN or 2.98 times while the initial hardness is 210.3 VHN for AISI 304 and 581.6 VHN or 3.07 times compare with initial hardness 142.9 VHN for low carbon steel. The thickness of nitride layer for AISI 304 and low carbon steel is around 30 µm. Nitrogen contents after nitriding are 10.74% mass or 30.32% atom for AISI 304 and 6.81% mass or 21.76% atom for low carbon steel. (author)

  4. Preparation of carbon nitride materials by polycondensation of the single-source precursor aminodichlorotriazine (ADCT)

    International Nuclear Information System (INIS)

    Carbon nitride, usually described as C3N4 or CNx (x > 1), has been reported to form disordered network structures. In this work we describe a new synthesis route using 2-amino-4,6-dichloro-s-triazine (ADCT) as a single-source precursor, adopting single step and two step decompositions. During two step polycondensation ADCT is first heated in a closed system and than fully condensed under vacuum. Our reactions yielded carbon nitride materials having compositions near C3N4. The obtained carbon nitride occurs as a brown, amorphous solid according to X-ray and electron diffraction experiments. Moreover, infrared spectra and results from 13C-NMR measurements indicate evidence for the presence of bridged heptazine and triazine units in the structure

  5. Self-Sensitized Carbon Nitride Microspheres for Long-Lasting Visible-Light-Driven Hydrogen Generation.

    Science.gov (United States)

    Gu, Quan; Gao, Ziwei; Xue, Can

    2016-07-01

    A new type of metal-free photocatalyst is reported having a microsphere core of oxygen-containing carbon nitride and self-sensitized surfaces by covalently linked polymeric triazine dyes. These self-sensitized carbon nitride microspheres exhibit high visible-light activities in photocatalytic H2 generation with excellent stability for more than 100 h reaction. Comparing to the traditional g-C3 N4 with activities terminated at 450 nm, the polymeric triazine dyes on the carbon nitride microsphere surface allow for effective wide-range visible-light harvesting and extend the H2 generation activities up to 600 nm. It is believed that this new type of highly stable self-sensitized metal-free structure opens a new direction of future development of low-cost photocatalysts for efficient and long-term solar fuels production. PMID:27225827

  6. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm-2 and 2 GeV xenon ion with a dose of 1E12 ions.cm-2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C3N4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C3N4 matrix was predominantly sp2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  7. Thickness dependence of Young's modulus and residual stress of sputtered aluminum nitride thin films

    Science.gov (United States)

    Schneider, M.; Bittner, A.; Schmid, U.

    2014-11-01

    Aluminum nitride thin films are commonly used as active layer in micro-/nanomachined devices due to their piezoelectric properties. In order to predict the performance of advanced device architectures, careful modelling and simulation using techniques such as finite element analysis are of the utmost importance. An accurate knowledge of the corresponding thin film material properties is therefore required. This work focuses on the mechanical properties residual stress and Young's modulus over a wide thickness range from 100 to 1200 nm. The load-deflection technique is used to measure the bending curve of a circumferentially clamped, circular aluminum nitride diaphragm under a uniformly distributed pressure load. The bending curves are analyzed using an advanced analytical approach rather than commonly used models for load-deflection methods, thus resulting in a higher accuracy. It is found that the Young's modulus is nearly independent of film thickness, whereas the tensile residual stress exhibits a maximum at a thickness of about 600 nm. A thorough discussion of possible error sources is presented and approaches to minimize their impact are discussed.

  8. Doping and electrical properties of cubic boron nitride thin films: A critical review

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) is a promising material for high-power and high-temperature electronic devices operating in harsh environments due to its outstanding properties including a wide band-gap, good chemical stability, high thermal conductivity, and high breakdown field. The electronic applications of c-BN have received considerable attention, benefiting from the progress in c-BN thin film deposition techniques during the last few years. The present article reviews the latest developments in doping and electrical properties of c-BN thin films. Following a brief introduction on film growth, we present calculated theoretical results on electronic structure as well as the energies of native defects and impurity dopants in c-BN. In recent experimental research, several dopants, including Be, Mg, Zn, S, and Si, have been incorporated into c-BN thin films during deposition or by post ion implantation, resulting in both n- and p-type conduction. These results are summarized and discussed in Section 3. In addition, results on c-BN/metal-contacts and p–n junctions based on intrinsic or doped c-BN thin films are discussed in Section 4. Finally, current status and future prospects for doping and electrical properties of c-BN thin films are discussed

  9. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10−7 cm2/V for electrons and holes, which is comparable to the value of about 10−7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products

  10. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Science.gov (United States)

    Doan, T. C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-05-01

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10-7 cm2/V for electrons and holes, which is comparable to the value of about 10-7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  11. ERDA characterization of carbon nitride films deposited by hollow cathode discharge process

    International Nuclear Information System (INIS)

    The interest in carbon nitride (CN) thin films stems from the theoretical work of Liu and Cohen predicting the extreme hardness of this material, comparable to or greater than that of diamond. The growth of CN thin films employing various deposition techniques such as plasma chemical vapor deposition, sputtering, laser ablation, ion assisted dynamic mixing and low energy ion implantation has been reported. This contribution presents some results about the characterization of CNx films using elastic recoil detection analysis (ERDA) technique. CN films were deposited on silicon substrates by electron beam evaporation of pure graphite in a nitrogen environment. A hollow cathode discharge in arc regime was used both for evaporating a graphite target and for generating a high density plasma in the vicinity of the substrate. The main deposition parameters were as follows: gas (N2) pressure, 10-2 - 5.10-2 mbar; hollow cathode discharge power, 2.5 - 5 kW; substrate negative bias voltage, 0-150 V; graphite evaporation rate, 0.08 - 0.2 g/min; deposition duration, 15-60 min. The ERDA measurements were carried out at the Tandem accelerator of IFIN-HH using a 63Cu10+ beam at 80 MeV. The samples were mounted in a scattering target chamber with a vacuum higher than 5 x 10-5 Torr. The detector consisted in a compact ΔE(gas)-E(solid) telescope, placed at 30 angle with respect to the beam. The elements of the main interests were C and N. The measured Δ E -E spectra for two samples prepared in different conditions are presented. A quantitative analysis of the C and N energy spectra using our program SURFAN have been carried out for the these samples. It shows that the nitrogen to carbon atomic concentration ratio is close to 0.3. The nitrogen content is lower than that expected for the ideal β - C3N4 solid. (authors)

  12. Investigation on uranium and plutonium nitrides with low oxygen and carbon contents

    International Nuclear Information System (INIS)

    Uranium nitride (UN) and uranium-plutonium nitride (UO.8Pu0.2N) with various oxygen impurity levels, up to 20.000 10-6 weight ratio, was studied. The strong affinity of these nitrides for the oxygen avoids to synthesize pure compounds (no oxygen) by direct combination of the elements or from hydride. The process expected to be used in nuclear fuel industry was chosen. The nitride was prepared by carboreduction and nitridation of the oxide, then ground with different amounts of oxide. The powder obtained was cold pressed and sintered (T = 17200C - 18000C ; t > 15 hours). Analysis of carbon and oxygen content, X ray diffraction measurements, ceramography and electronprobe microanalysis were used to characterize the pellets. The main results are: The oxide (UO2 or MO2) forms at temperatures higher than about 11500C, an oxinitride in contact with nitride matrix (UN or MN), only under nitrogen. This oxinitride, isomorphous with UO2 crystal, is stable up to 17500C with nitride matrix, under a pressure of 1 bar. During the cooling the oxinitride is decomposed in UO2 and U2N3+x. This mixed oxinitride of U and Pu was observed for the first time. The plutonium content of this solid solution is twice smaller than in the nitride matrix. The solubility limit of oxygen in the UN and U0.8Pu0.2N is less than 1000.10-6 weight ratio. This value is lower than published results. The lattice parameter of UN increases in ratio with carbon content, but no noticeable influence of oxygen was detected. This lattice parameter, for UN saturated with oxygen, is 0.48887 ± 5.10-5 nm

  13. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    International Nuclear Information System (INIS)

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed

  14. Thermally activated reactions of boron nitride nanotubes with C60 fullerene: a Raman study of boron nitride-carbon nanotube composites

    International Nuclear Information System (INIS)

    Full text: Boron nitride nanotubes (BNNT) are topological analogues to single wall carbon nanotubes (SWCNT). LiKEX the latter one expects that boron nitride nanotubes can be filled with fullerenes to maKEX BN-carbon peapods. This opens new possibilities of generating nanostructures with interesting physical properties. BNNTs were first heat treated in air to open the ends and to remove excess boron particles. We analysed and refined the filling process for SWCNTs and applied it to the BNNTs. For the carbon system critical conditions were determined for opening of tube ends. Filling with C60 fullerene via vapour phase was applied. Subsequently high temperature treatment was performed to transform the fullerenes in a carbon nanotube. We performed multi-frequency Raman spectroscopy to follow the process. Some spectral features of the reaction product in the low frequency range may be assigned to small diameter carbon nanotubes inside the boron nitride nanotubes. (author)

  15. Hydrogen production using zinc-doped carbon nitride catalyst irradiated with visible light

    OpenAIRE

    Bing Yue, Qiuye Li, Hideo Iwai, Tetsuya Kako and Jinhua Ye

    2011-01-01

    Recently, graphitic carbon nitride (g-C3N4) has been investigated as a photocatalyst for water splitting and organic dye degradation. In this study, we have developed a simple soft-chemical method of doping Zn into g-C3N4 to prepare a metal-containing carbon nitride. The doping was confirmed by x-ray photoelectron spectroscopy, and diffusion reflectance spectra revealed a significant red shift in the absorption edge of Zn/g-C3N4. This hybrid material shows high photocatalytic activity and goo...

  16. Fabrication of particular structures of hexagonal boron nitride and boron-carbon-nitrogen layers by anisotropic etching

    Science.gov (United States)

    Vishwakarma, Riteshkumar; Sharma, Subash; Shinde, Sachin M.; Sharma, Kamal P.; Thangaraja, Amutha; Kalita, Golap; Tanemura, Masaki

    2016-05-01

    Anisotropic etching of hexagonal boron nitride (h-BN) and boron-carbon-nitrogen (BCN) basal plane can be an exciting platform to develop well-defined structures with interesting properties. Here, we developed an etching process of atomically thin h-BN and BCN layers to fabricate nanoribbons (NRs) and other distinct structures by annealing in H2 and Ar gas mixture. BCN and h-BN films are grown on Cu foil by chemical vapor deposition (CVD) using solid camphor and ammonia borane as carbon, nitrogen and boron source, respectively. Formation of micron size well-defined etched holes and NRs are obtained in both h-BN and BCN layers by the post growth annealing process. The etching process of h-BN and BCN basal plane to fabricate NRs and other structures with pronounced edges can open up new possibilities in 2D hybrid materials.

  17. Improvement in surface properties with TiN thin film coating on plasma nitride austenitic 316 stainless steel

    Directory of Open Access Journals (Sweden)

    Pankaj Kumar Singh

    2016-02-01

    Full Text Available The surface of the austenitic 316 stainless steel was modified by using two processes, i.e, dc glow discharge plasma and RF magnetron sputtering. The plasma nitriding was carried out at 500°C under 3 mbar pressure for 5 h in presence of 4N2:1H2 gas mixture. A thin layer of TiN was coated on plasma nitrided samples by using RF magnetron sputtering.The phase formation, nitride layer, surface nanohardness and corrosion current density were evaluated by X-ray diffractogram, optical microscope and SEM, nanoindenter and electrochemical analyser. The untreated sample showed only γFe diffraction pattern while after nitriding CrN phase with γFe and after coating only TiN phase diffraction pattern is observed. The nitride layerof about 8-10 μm is observed in nitrided sample and TiN layer of about 200 nm is measured in TiN coated plasma nitride sample.The untreated 316 steel shows the surface nanohardness about 1. 59 to 1.88 GPa. The nitriding improved the surface hardness about five times (8.45GPa and TiN coating further enhanced the surface hardness about seven times (13.16GPa than untreated sample. The corrosion potential (ECorr of the plasma nitrided and TiN coated plasma nitrided 316 samples showing positive shift with reference to the untreated sample. The corrosion potential(ECorr value of untreated, plasma nitride and TiN coated plasma nitrided 316 samples are -0.593 V, -0.443 V and 0.074 V, respectively. The corrosion current density (ICorr is considerably enhanced after nitriding and TiN coating, i.e., 4.46 μAcm-2 and 2.24 μAcm-2 respectively than 15.13 μAcm-2 for untreated sample. The passivation current densities of samples measured at 0.6 V vs SHEare about 69.18 μAcm-2, 18.62 μAcm-2 and 3.16μAcm-2, respectively.

  18. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

    International Nuclear Information System (INIS)

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (108 cm−2), in the case of hydrogen-treated ND seeding particles, to very high values of 1011 cm−2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

  19. Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Merchant, A.R.; McCulloch, D.; McKenzie, D.R.; Yin, Y.; Gerstner, E.G. [New South Wales Univ., Kensington, NSW (Australia)

    1996-12-31

    Carbon nitride materials have been the focus of research efforts worldwide. Most materials studied have been amorphous, with only a few groups claiming to have found a crystalline material. In this paper, carbon nitride materials prepared by two different techniques are analysed, and found to be remarkably similar in bonding and structure. The materials appear to have a primarily sp{sup 2} bonded carbon structure with a lower bond length than found in an amorphous carbon. This is explained by nitrogen substituting into `rings` to a saturation level of about one nitrogen per three carbon atoms. No evidence was found for a crystalline structure of formula C{sub 3}N{sub 4}, or any amorphous derivative of it. 16 refs., 1 tab., 5 figs.

  20. Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantation

    International Nuclear Information System (INIS)

    Carbon nitride materials have been the focus of research efforts worldwide. Most materials studied have been amorphous, with only a few groups claiming to have found a crystalline material. In this paper, carbon nitride materials prepared by two different techniques are analysed, and found to be remarkably similar in bonding and structure. The materials appear to have a primarily sp2 bonded carbon structure with a lower bond length than found in an amorphous carbon. This is explained by nitrogen substituting into 'rings' to a saturation level of about one nitrogen per three carbon atoms. No evidence was found for a crystalline structure of formula C3N4, or any amorphous derivative of it. 16 refs., 1 tab., 5 figs

  1. Graphene-analogue carbon nitride: novel exfoliation synthesis and its application in photocatalysis and photoelectrochemical selective detection of trace amount of Cu2+

    Science.gov (United States)

    Xu, Hui; Yan, Jia; She, Xiaojie; Xu, Li; Xia, Jiexiang; Xu, Yuanguo; Song, Yanhua; Huang, Liying; Li, Huaming

    2014-01-01

    Graphene-analogue nanostructures defined as a new kind of promising materials with unique electronic, surface and optical properties have received much attention in the fields of catalysis, energy storage, sensing and electronic devices. Due to the distinctive structure characteristics of the graphene-analogue materials, they brought novel and amazing properties. Herein, graphene-analogue carbon nitride (GA-C3N4) was synthesized by high-yield, large-scale thermal exfoliation from the graphitic C3N4-based intercalation compound. Graphene-analogue carbon nitride exhibited 2D thin-layer structure with 6-9 atomic thickness, a high specific surface area of 30.1 m2 g-1, increased photocurrent responses and improved electron transport ability, which could give rise to enhancing the photocatalytic activity and stability. The graphene-analogue carbon nitride had a new features that could make it suitable as a sensor for Cu2+ determination. So GA-C3N4 is a new but promising candidate for heavy metal ions (Cu2+) determination in water environment. The photocatalytic mechanism and photoelectrochemical selective sensing of Cu2+ were also discussed.Graphene-analogue nanostructures defined as a new kind of promising materials with unique electronic, surface and optical properties have received much attention in the fields of catalysis, energy storage, sensing and electronic devices. Due to the distinctive structure characteristics of the graphene-analogue materials, they brought novel and amazing properties. Herein, graphene-analogue carbon nitride (GA-C3N4) was synthesized by high-yield, large-scale thermal exfoliation from the graphitic C3N4-based intercalation compound. Graphene-analogue carbon nitride exhibited 2D thin-layer structure with 6-9 atomic thickness, a high specific surface area of 30.1 m2 g-1, increased photocurrent responses and improved electron transport ability, which could give rise to enhancing the photocatalytic activity and stability. The graphene

  2. Cobalt oxide and nitride particles supported on mesoporous carbons as composite electrocatalysts for dye-sensitized solar cells

    Science.gov (United States)

    Chen, Ming; Shao, Leng-Leng; Gao, Ze-Min; Ren, Tie-Zhen; Yuan, Zhong-Yong

    2015-07-01

    The composite electrocatalysts of cobalt oxide/mesoporous carbon and cobalt nitride/mesoporous carbon are synthesized via a convenient oxidation and subsequent ammonia nitridation of cobalt particles-incorporated mesoporous carbon, respectively. The cobalt oxide and nitride particles are uniformly imbedded in mesoporous carbon matrix, forming the unique composites with high surface area and mesopore architecture, and the resultant composites are evaluated as counter electrode materials, exhibiting good catalytic activity for the reduction of triiodide. The composites of cobalt nitride and mesoporous carbon are superior to the counterparts of cobalt oxide and mesoporous carbon in catalyzing the triiodide reduction, and the dye-sensitized solar cell with the composites achieves an optimum power conversion efficiency of 5.26%, which is comparable to the one based on the conventional Pt counter electrode (4.88%).

  3. Magnetic and structural properties of nitrided Fe and FeTi thin films

    CERN Document Server

    Bonder, M J

    2001-01-01

    presence of weak perpendicular anisotropy occurring as the bilayer thickness increased. As the bilayer thickness was increased there was an asymptotic approach of the magnetization to the level of the unexposed materials. The presence of the perpendicular anisotropy was maintained for a larger parameter space. In both series the anisotropy is attributed to stress induced by the substrate, Nitriding Fe and FeTi using the aforementioned technique provides a controlled and viable way to alter the magnetic and structural properties. This thesis investigates the magnetic and structural properties of Fe and Fe sub 8 sub 5 Ti sub 1 sub 5 thin films nitrided using a nitrogen atom source. In this novel technique, the atom source produces an atomic nitrogen beam for which multilayer samples with bilayers of the form Fe/FeN or FeTi/FeTiN were synthesized by varying the thickness of the Fe or FeTi exposed to the nitrogen beam. The samples studied here are all in the as-deposited state. X-Ray reflectivity confirms the pre...

  4. Reactive magnetron sputter deposition of superconducting niobium titanium nitride thin films with different target sizes

    CERN Document Server

    Bos, B G C; Haalebos, E A F; Gimbel, P M L; Klapwijk, T M; Baselmans, J J A; Endo, A

    2016-01-01

    The superconducting critical temperature (Tc>15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100 mm diameter) system and a large target (127 mm x 444.5 mm) one, with the aim of improving the film uniformity using the large target system. We focus on the Tc of the films and I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc>15 K. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system'...

  5. Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

    International Nuclear Information System (INIS)

    We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

  6. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    International Nuclear Information System (INIS)

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber. (paper)

  7. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  8. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  9. Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

    International Nuclear Information System (INIS)

    The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (ScxAl1−xN) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc0.41Al0.59N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc0.41Al0.59N film is higher than those of lead zirconate titanate and Pb(Mg1/3Nb2/3)O3-PbTiO3 films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc0.41Al0.59N film is due to the high d31 and the low relative permittivity.

  10. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Large-area MgB2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  11. Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution

    Science.gov (United States)

    Zhang, Jing; Yang, Yingchao; Lou, Jun

    2016-09-01

    Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

  12. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    International Nuclear Information System (INIS)

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications

  13. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: rupeshkr@barc.gov.in [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Soni, A. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, D.R.; Kulkarni, M.S. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2014-11-15

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications.

  14. Early stages of growth and crystal structure evolution of boron nitride thin films

    Science.gov (United States)

    Henry, Anne; Chubarov, Mikhail; Czigány, Zsolt; Garbrecht, Magnus; Högberg, Hans

    2016-05-01

    A study of the nucleation and crystal structure evolution at the early stages of the growth of sp2-BN thin films on 6H-SiC and α-Al2O3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On α-Al2O3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy.

  15. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.; Yang, Kaida; Lukaszew, R. Alejandra [Department of Physics, The College of William & Mary, Small Hall, 300 Ukrop Way, Williamsburg, Virginia 23185 (United States)

    2016-03-15

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

  16. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    International Nuclear Information System (INIS)

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1

  17. Bacterial adhesion studies on titanium, titanium nitride and modified hydroxyapatite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeyachandran, Y.L. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Venkatachalam, S. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Karunagaran, B. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Narayandass, Sa.K. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India)]. E-mail: sakndass@yahoo.com; Mangalaraj, D. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Bao, C.Y. [West China College of Stomatology, Sichuan University, Chengdu 610041 (China); Zhang, C.L. [West China College of Stomatology, Sichuan University, Chengdu 610041 (China)

    2007-01-15

    A qualitative study on adhesion of the oral bacteria Porphyromonas gingivalis on titanium (Ti), titanium nitride (TiN), fluorine modified hydroxyapatite (FHA) and zinc modified FHA (Zn-FHA) thin films is investigated. Ti and TiN thin films were deposited by DC magnetron sputtering and hydroxyapatite-based films were prepared by solgel method. The crystalline structure, optical characteristics, chemical composition and surface topography of the films were studied by XRD, optical transmission, XPS, EDAX and AFM measurements. The predominant crystallite orientation in the Ti and TiN films was along (002) and (111) of hcp and cubic structures, respectively. The Ti : O : N composition ratio in the surface of the Ti and TiN films was found to be 7 : 21 : 1 and 3 : 8 : 2, respectively. The atomic concentration ratio (Zn + Ca) / P in Zn-FHA film was found to be 1.74 whereby the Zn replaced 3.2% of Ca. The rough surface feature in modified HA films was clearly observed in the SEM images and the surface roughness (rms) of Ti and TiN films was 2.49 and 3.5 nm, respectively, as observed using AFM. The film samples were sterilized, treated in the bacteria culture medium, processed and analyzed using SEM. Surface roughness of the films was found to have least influence on the bacterial adhesion. More bacteria were observed on the TiN film with oxide nitride surface layer and less number of adhered bacteria was noticed on the Ti film with native surface oxide layer and on Zn-FHA film.

  18. β-Sialon Produced by Carbon Thermal Nitriding Reaction of Bauxite

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    β-Sialon was produced by carbon thermal nitriding reaction in N2 gas atmosphere when the mixtures of bauxite and anthracite were put into vertical furnace. According to the mass loss of raw materials and the result of X-ray diffration (XRD) of products, the influences of the process parameters on the compositions and relative contents of products, such as the fixed carbon content, the flow of N2, the soaking time and the temperature, were researched.

  19. Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

    International Nuclear Information System (INIS)

    There are higher technical requirements for protecting layer of magnetic heads and disks used in future high-density storage fields. In this paper, ultra-thin (2 nm thickness) tetrahedral amorphous carbon (ta-C) films were firstly prepared by filtered cathodic vacuum arc (FCVA) method, then a series of nitriding treatments were performed with nitrogen plasma generated using electron cyclotron resonance (ECR) microwave source. Here it highlighted the influence of nitrogen flow and applied substrate bias voltage on the structural characteristics of ta-C films during the plasma nitriding process. The chemical compositions, element depth distribution profiles, physical structures and bonding configurations of plasma-nitrided ta-C films were investigated by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and UV-vis Raman spectroscopy. The experimental results show that the carbon nitride compounds (CNx) are formed in nitrogenated ta-C films in which the N content and its depth distribution depends on bias voltage to large extent rather than N2 flow. The N content of nitrogenated ta-C films can reach 16 at.% for a substrate bias of -300 V and a N2 flow of 90 sccm. With increasing nitrogen content, there is less G peak dispersion and more ordering of structure. Furthermore, appropriate nitriding treatment (substrate bias: -100 V, N2 flow: 150 sccm) can greatly increase the fraction of sp3 and sp3C-N bonds, but the values begin to fall when the N content is above 9.8 at.%. All these indicate that suitable ECR-assisted microwave plasma nitriding is a potential modification method to obtain ultra-thin ta-C films with higher sp3 and sp3C-N fractions for high-density magnetic storage applications.

  20. Cross-sectional STEM study of cathodic arc deposited amorphous carbon and carbon-nitride films

    International Nuclear Information System (INIS)

    Full text: The VG601 high resolution dedicated Scanning Transmission Electron Microscope (STEM) located at the University of Sydney has the capability of providing structural information with a spatial resolution of less than one nanometre. Compositional information can be obtained using either Energy Dispersive Spectroscopy (EDS) or Electron Energy Loss Spectroscopy. Each characteristic absorption edge in EELS also exhibits structure which provides information on the atomic environment of the absorbing atom. The combination of EELS and STEM therefore provides a powerful tool for analysing structure at the nanometre scale. In this work we investigate the structure of cathodic arc deposited carbon and carbon-nitride films using this EELS/STEM combination. By preparing the films in cross-section and collecting a number of spectra in a line through the film thickness (line profile), it is possible to investigate the deposition process in great detail since variations in structure with depth in the film provide information on the 'history' of film growth. In the case of carbon based materials, this technique provides a direct measure of the variations in both density and proportion of diamond-like bonding. These measurements will be used to help understand the mechanisms of film growth by cathodic arc deposition

  1. Self-assembly of graphitic carbon nitride nanosheets–carbon nanotube composite for electrochemical simultaneous determination of catechol and hydroquinone

    International Nuclear Information System (INIS)

    Graphical abstract: Schematic diagram of hydrothermal synthesis graphitic carbon nitride nanosheets-carbon nanotube composite and theirs application for electrochemical sensing catechol and hydroquinone. - Highlights: • Self-assembly of graphitic carbon nitride nanosheets-carbon nanotube composite. • CNNS-CNT show more stronger conductivity than CNNS and CNT. • CNNS-CNT has been performed for detection of catechol and hydroquinone. • The probe was applied to detect practical samples with satisfactory results. - Abstract: In this paper, three-dimensional (3D) graphitic carbon nitride nanosheets-carbon nanotube (CNNS-CNT) composite was synthesized via hydrothermal reaction of 2D CNNS and 1D CNT-COOH by π-π stacking and electrostatic interactions. This CNNS-CNT composite was characterized by transmission electron microscope, scanning electron microscope, x-ray diffraction and fourier-transform infrared. In addition, the CNNS-CNT composite displayed excellent conductivity comparing with CNNS and CNT-COOH monomer. This composite was applied for electrochemical simultaneous determination of catechol (CC) and hydroquinone (HQ) with good sensitivity, wide linear range and low detection limit. In addition, this CNNS-CNT composite modified electrode was also applied to detect practical samples with satisfactory results

  2. Graphitic carbon nitride nanosheets doped graphene oxide for electrochemical simultaneous determination of ascorbic acid, dopamine and uric acid

    International Nuclear Information System (INIS)

    Graphical abstract: Schematic drawing of electrochemical oxidize AA, DA and UA on graphitic carbon nitride nanosheets-graphene oxide composite modified electrode. - Highlights: • Synthesize g-C3N4, GO and CNNS-GO composite. • CNNS-GO composite was the first time for simultaneous determination of AA, DA and UA. • CNNS-GO/GCE displays fantastic selectivity and sensitivity for AA, DA and UA. • CNNS-GO/GCE was applied to detect real sample with satisfactory results. - Abstract: Graphitic carbon nitride nanosheets with a graphite-like structure have strong covalent bonds between carbon and nitride atoms, and nitrogen atoms in the carbon architecture can accelerate the electron transfer and enhance electrical properties effectually. The graphitic carbon nitride nanosheets-graphene oxide composite was synthesized. And the electrochemical performance of the composite was investigated by cyclic voltammetry and differential pulse voltammetry ulteriorly. Due to the synergistic effects of layer-by-layer structures by π-π stacking or charge-transfer interactions, graphitic carbon nitride nanosheets-graphene oxide composite can improved conductivity, electro-catalytic and selective oxidation performance. The proposed graphitic carbon nitride nanosheets-graphene oxide composite modified electrode was employed for simultaneous determination of ascorbic acid, dopamine and uric acid in their mixture solution, it exhibited distinguished sensitivity, wide linear range and low detection limit. Moreover, the modified electrode was applied to detect urine and dopamine injection sample, and then the samples were spiked with certain concentration of three substances with satisfactory recovery results

  3. Optomechanical and crystallization phenomena visualized with 4D electron microscopy: interfacial carbon nanotubes on silicon nitride.

    Science.gov (United States)

    Flannigan, David J; Zewail, Ahmed H

    2010-05-12

    With ultrafast electron microscopy (UEM), we report observation of the nanoscopic crystallization of amorphous silicon nitride, and the ultrashort optomechanical motion of the crystalline silicon nitride at the interface of an adhering carbon nanotube network. The in situ static crystallization of the silicon nitride occurs only in the presence of an adhering nanotube network, thus indicating their mediating role in reaching temperatures close to 1000 degrees C when exposed to a train of laser pulses. Under such condition, 4D visualization of the optomechanical motion of the specimen was followed by quantifying the change in diffraction contrast of crystalline silicon nitride, to which the nanotube network is bonded. The direction of the motion was established from a tilt series correlating the change in displacement with both the tilt angle and the response time. Correlation of nanoscopic motion with the picosecond atomic-scale dynamics suggests that electronic processes initiated in the nanotubes are responsible for the initial ultrafast optomechanical motion. The time scales accessible to UEM are 12 orders of magnitude shorter than those traditionally used to study the optomechanical motion of carbon nanotube networks, thus allowing for distinctions between the different electronic and thermal mechanisms to be made. PMID:20377202

  4. Atomic-Resolution Observations of Semi-Crystalline IntegranularThin Films in Silicon Nitride

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Alexander; Idrobo, Juan C.; Cinibulk, Michael K.; Kisielowski, Christian; Browning, Nigel D.; Ritchie, Robert O.

    2005-08-01

    The thin intergranular phase in a silicon nitride (Si3N4)ceramic, which has been regarded for decades as having an entirely amorphous morphology, is shown to have a semi-crystalline structure. Using two different but complementary high-resolution electron microscopy methods, the intergranular atomic structure was directly imaged at the atomic level. These high-resolution images show that the atomic arrangement of the dopand element cerium takes very periodic positions not only along the interface between the intergranular phase and the Si3N4 matrix grains, but it arranges in a semi-crystalline structure that spans the entire width of the intergranular phase between two adjacent matrix grains, in principle connecting the two separate matrix grains. The result will have implications on the approach of understanding the materials properties of ceramics, most significantly on the mechanical properties and the associated computational modeling of the atomic structure of the thin intergranular phase in Si3N4 ceramics.

  5. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    International Nuclear Information System (INIS)

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10-9 A/cm2 at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10-9A/cm2 at 1MV/cm was achieved

  6. The effects of rare earth doping on gallium nitride thin films

    Science.gov (United States)

    McHale, Stephen R.

    The thermal neutron capture cross section of the rare earth (RE) metal isotope Gd-157 is the largest of all known natural elements, which distinguishes the material as a logical candidate for neutron detection. To address an incomplete understanding of rare earth doped Gallium Nitride (GaN) materials, investigations of the surface electronic structure and interface properties of GaN thin films doped with rare earths (Yb, Er, Gd) were undertaken. Lattice ion occupation, bonding, rare earth 4f occupation, and gold Schottky barrier formation were examined using synchrotron photoemission spectroscopy. Measured Debye temperatures indicate substitutional occupation of Ga sites by RE ions. The occupied RE 4f levels, deep within the valence band, suggest that intra-atomic f-f transitions may be more 'blue' than predicted by theoretical models. Thin layers of gold did not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. The resultant Schottky barrier heights for GaN:Yb, GaN:Er, and GaN:Gd, are 25--55% larger than those reported at the gold to undoped GaN interface. The utility of gadolinium as a neutron detection material was examined via fundamental nuclear and semiconductor physics. Low charge production and the large range of internal conversion electrons limits charge collection efficiency.

  7. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  8. Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale

    Directory of Open Access Journals (Sweden)

    Costas A. Charitidis

    2013-04-01

    Full Text Available The use of materials with very attractive friction and wear properties has raised much attention in research and industrial sectors. A wide range of tribological applications, including rolling and sliding bearings, machining, mechanical seals, biomedical implants and microelectromechanical systems (MEMS, require thin films with high mechanical strength, chemical inertness, broad optical transparency, high refractive index, wide bandgap excellent thermal conductivity and extremely low thermal expansion. Carbon based thin films like diamond, diamond-like carbon, carbon nitride and cubic boron nitride known as “super-hard” material have been studied thoroughly as the ideal candidate for tribological applications. In this study, the results of experimental and simulation works on the nanotribological behavior of carbon films and fundamental mechanisms of friction and lubricity at the nano-scale are reviewed. The study is focused on the nanomechanical properties and analysis of the nanoscratching processes at low loads to obtain quantitative analysis, the comparison obtain quantitative analysis, the comparison of their elastic/plastic deformation response, and nanotribological behavior of the a-C, ta-C, a-C:H, CNx, and a-C:M films. For ta-C and a-C:M films new data are presented and discussed.

  9. Graphene-analogue carbon nitride: novel exfoliation synthesis and its application in photocatalysis and photoelectrochemical selective detection of trace amount of Cu²⁺.

    Science.gov (United States)

    Xu, Hui; Yan, Jia; She, Xiaojie; Xu, Li; Xia, Jiexiang; Xu, Yuanguo; Song, Yanhua; Huang, Liying; Li, Huaming

    2014-01-01

    Graphene-analogue nanostructures defined as a new kind of promising materials with unique electronic, surface and optical properties have received much attention in the fields of catalysis, energy storage, sensing and electronic devices. Due to the distinctive structure characteristics of the graphene-analogue materials, they brought novel and amazing properties. Herein, graphene-analogue carbon nitride (GA-C₃N₄) was synthesized by high-yield, large-scale thermal exfoliation from the graphitic C₃N₄-based intercalation compound. Graphene-analogue carbon nitride exhibited 2D thin-layer structure with 6-9 atomic thickness, a high specific surface area of 30.1 m(2) g(-1), increased photocurrent responses and improved electron transport ability, which could give rise to enhancing the photocatalytic activity and stability. The graphene-analogue carbon nitride had a new features that could make it suitable as a sensor for Cu(2+) determination. So GA-C₃N₄ is a new but promising candidate for heavy metal ions (Cu(2+)) determination in water environment. The photocatalytic mechanism and photoelectrochemical selective sensing of Cu(2+) were also discussed. PMID:24309635

  10. High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

    International Nuclear Information System (INIS)

    Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B4C target in an Ar/N2 gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V

  11. Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption on the transport properties of carbon and boron nitride nanotubes

    Science.gov (United States)

    Zhong, Xiaoliang; Mukhopadhyay, Saikat; Gowtham, S.; Pandey, Ravindra; Karna, Shashi P.

    2013-04-01

    The effect of molecular adsorption on the transport properties of single walled carbon and boron nitride nanotubes (CNTs and BNNTs) is investigated using density functional theory and non-equilibrium Green's function methods. The calculated I-V characteristics predict noticeable changes in the conductivity of semiconducting BNNTs due to physisorption of nucleic acid base molecules. Specifically, guanine which binds to the side wall of BNNT significantly enhances its conductivity by introducing conduction channels near the Fermi energy of the bioconjugated system. For metallic CNTs, a large background current masks relatively small changes in current due to the biomolecular adsorption. The results therefore suggest the suitability of BNNTs for biosensing applications.

  12. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  13. Activation of peroxymonosulfate by graphitic carbon nitride loaded on activated carbon for organic pollutants degradation.

    Science.gov (United States)

    Wei, Mingyu; Gao, Long; Li, Jun; Fang, Jia; Cai, Wenxuan; Li, Xiaoxia; Xu, Aihua

    2016-10-01

    Graphitic carbon nitride supported on activated carbon (g-C3N4/AC) was prepared through an in situ thermal approach and used as a metal free catalyst for pollutants degradation in the presence of peroxymonosulfate (PMS) without light irradiation. It was found that g-C3N4 was highly dispersed on the surface of AC with the increase of surface area and the exposition of more edges and defects. The much easier oxidation of C species in g-C3N4 to CO was also observed from XPS spectra. Acid Orange 7 (AO7) and other organic pollutants could be completely degraded by the g-C3N4/AC catalyst within 20min with PMS, while g-C3N4+PMS and AC+PMS showed no significant activity for the reaction. The performance of the catalyst was significantly influenced by the amount of g-C3N4 loaded on AC; but was nearly not affected by the initial solution pH and reaction temperature. In addition, the catalysts presented good stability. A nonradical mechanism accompanied by radical generation (HO and SO4(-)) in AO7 oxidation was proposed in the system. The CO groups play a key role in the process; while the exposure of more N-(C)3 group can further increase its electron density and basicity. This study can contribute to the development of green materials for sustainable remediation of aqueous organic pollutants. PMID:27214000

  14. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    Science.gov (United States)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m‑3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  15. GLANCING INCIDENCE X-RAY STUDIES OF TITANIUM NITRIDE THIN FILMS USING A NEW MULTIPURPOSE LABORATORY SPECTROMETER

    OpenAIRE

    Buschert, R.C; Gibson, P.; Gissler, W.; Haupt, J.; Crabb, T.

    1989-01-01

    A multipurpose laboratory glancing angle X-ray spectrometer using a standard X-ray tube and a germanium solid state detector has been designed for vertical and horizontal diffraction scans, reflectivity and glancing angle fluorescence measurements. It has been used to study titanium nitride thin films grown under various conditions that vary the stoichiometry, strain, grain size, orientation and lattice parameter. In particular, films grown at liquid nitrogen substrate temperature show very h...

  16. Hydrogen production using zinc-doped carbon nitride catalyst irradiated with visible light

    Directory of Open Access Journals (Sweden)

    Bing Yue, Qiuye Li, Hideo Iwai, Tetsuya Kako and Jinhua Ye

    2011-01-01

    Full Text Available Recently, graphitic carbon nitride (g-C3N4 has been investigated as a photocatalyst for water splitting and organic dye degradation. In this study, we have developed a simple soft-chemical method of doping Zn into g-C3N4 to prepare a metal-containing carbon nitride. The doping was confirmed by x-ray photoelectron spectroscopy, and diffusion reflectance spectra revealed a significant red shift in the absorption edge of Zn/g-C3N4. This hybrid material shows high photocatalytic activity and good stability for hydrogen evolution from an aqueous methanol solution under visible light irradiation (λ≥420 nm. The hydrogen evolution rate was more than 10 times higher for a 10%-Zn/g-C3N4 sample (59.5 μmol h−1 than for pure g-C3N4. The maximum quantum yield was 3.2% at 420 nm.

  17. Hydrogen production using zinc-doped carbon nitride catalyst irradiated with visible light

    International Nuclear Information System (INIS)

    Recently, graphitic carbon nitride (g-C3N4) has been investigated as a photocatalyst for water splitting and organic dye degradation. In this study, we have developed a simple soft-chemical method of doping Zn into g-C3N4 to prepare a metal-containing carbon nitride. The doping was confirmed by x-ray photoelectron spectroscopy, and diffusion reflectance spectra revealed a significant red shift in the absorption edge of Zn/g-C3N4. This hybrid material shows high photocatalytic activity and good stability for hydrogen evolution from an aqueous methanol solution under visible light irradiation (λ≥420 nm). The hydrogen evolution rate was more than 10 times higher for a 10%-Zn/g-C3N4 sample (59.5 μmol h-1) than for pure g-C3N4. The maximum quantum yield was 3.2% at 420 nm.

  18. Ammonia-induced robust photocatalytic hydrogen evolution of graphitic carbon nitride

    Science.gov (United States)

    Yang, Pengju; Zhao, Jianghong; Qiao, Wei; Li, Li; Zhu, Zhenping

    2015-11-01

    We report a new and effective method to prepare high activity graphitic carbon nitride (g-C3N4) by a simple ammonia etching treatment. The obtained g-C3N4 displays a high BET surface area and enhanced electron/hole separation efficiency. The hydrogen evolution rates improved from 52 μmol h-1 to 316.7 μmol h-1 under visible light.We report a new and effective method to prepare high activity graphitic carbon nitride (g-C3N4) by a simple ammonia etching treatment. The obtained g-C3N4 displays a high BET surface area and enhanced electron/hole separation efficiency. The hydrogen evolution rates improved from 52 μmol h-1 to 316.7 μmol h-1 under visible light. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05570a

  19. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics

    Science.gov (United States)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-11-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature

  20. Conductive Graphitic Carbon Nitride as an Ideal Material for Electrocatalytically Switchable CO2 Capture

    OpenAIRE

    Xin Tan; Liangzhi Kou; Tahini, Hassan A.; Smith, Sean C.

    2015-01-01

    Good electrical conductivity and high electron mobility of the sorbent materials are prerequisite for electrocatalytically switchable CO2 capture. However, no conductive and easily synthetic sorbent materials are available until now. Here, we examined the possibility of conductive graphitic carbon nitride (g-C4N3) nanosheets as sorbent materials for electrocatalytically switchable CO2 capture. Using first-principle calculations, we found that the adsorption energy of CO2 molecules on g-C4N3 n...

  1. One Dimensional Graphitic Carbon Nitrides as Effective Metal-Free Oxygen Reduction Catalysts

    OpenAIRE

    Muhammad Tahir; Nasir Mahmood; Jinghan Zhu; Asif Mahmood; Butt, Faheem K.; Syed Rizwan; Imran Aslam; Tanveer, M.; Faryal Idrees; Imran Shakir; Chuanbao Cao; Yanglong Hou

    2015-01-01

    To explore the effect of morphology on catalytic properties of graphitic carbon nitride (GCN), we have studied oxygen reduction reaction (ORR) performance of two different morphologies of GCN in alkaline media. Among both, tubular GCN react with dissolved oxygen in the ORR with an onset potential close to commercial Pt/C. Furthermore, the higher stability and excellent methanol tolerance of tubular GCN compared to Pt/C emphasizes its suitability for fuel cells.

  2. 2D to 3D transition of polymeric carbon nitride nanosheets

    International Nuclear Information System (INIS)

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS

  3. 2D to 3D transition of polymeric carbon nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales (IIM), Universidad Nacional Autónoma de México, Apdo. Postal 70–360, Cd. Universitaria, México D.F. 04510 (Mexico); Martín-Ramos, Pablo [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martín-Gil, Jesús; Navas-Gracia, Luis M. [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  4. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  5. Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

    Science.gov (United States)

    Valour, Arnaud; Cheviré, François; Tessier, Franck; Grasset, Fabien; Dierre, Benjamin; Jiang, Tengfei; Faulques, Eric; Cario, Laurent; Jobic, Stéphane

    2016-04-01

    Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO2 substrate from a ZnO colloidal solution. Zinc peroxide (ZnO2) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H2O2 solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV-Visible transmittance spectroscopy.

  6. Fabrication of titanium nitride thin films by DC magneton sputtering on different types of substrates for coating applications

    International Nuclear Information System (INIS)

    Titanium nitride thin films (TiN) are fabricated by DC magneton sputtering on different types of substrates such as glass substrates, PET substrates, substrate alloy (AISI 304) and drill steel. In this work we study the effect of target-substrate distance, sputtering time and negative voltage to the crystal structure, mechanical and optical properties of the films. The properties of the thin films were studied by X-ray diffraction method Stylus, UV-Vis method and scanning electron microscopy. Results showed that the target-substrate distance, sputtering time and negative voltage affects the crystalline structure, mechanical and optical properties of the films. TiN films have been synthesized highly crystalline structure, crystal structure of thin films oriented along the surface lattice (111), (200) and (311). Besides TiN thin films also have high reflectance in the visible and infrared range, good adhesion, high chemical durability. (author)

  7. Mechanical Properties Analysis of Iron-Nitride Thin Film on the Aluminium Substrate

    International Nuclear Information System (INIS)

    Deposition of iron-nitride thin film on the surface aluminium substrate has been done by plasma DC sputtering technique. The deposition process was done with the following process parameters variations: deposition time was at (15 to 60 min), substrate temperature (150 to 300℃), and ratio of N2/Ar gas (0.25 to 0.45). The purpose of the research is to study the mechanical properties and micro structure of surfaces materials including concentration of Fe and N2 elements. The micro hardness testing was done using Digital Type Microhardness Tester MX T70, while the micro structure and elements composition were observed by using SEM and EDS. It was obtained that the hardness of Al substrate increased by about 283% and this was achieved at substrate temperature of 150℃, deposition time 60 min, ratio of N2/Ar gas is 0.25 and 5 µm of depth, while the concentration of N2 and Fe elements in 25 µm of depth are 1.18 and 2.72 At%, respectively. (author)

  8. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  9. Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride

    Science.gov (United States)

    Simmendinger, Julian; Pracht, Uwe S.; Daschke, Lena; Proslier, Thomas; Klug, Jeffrey A.; Dressel, Martin; Scheffler, Marc

    2016-08-01

    We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K ≥Tc≥2.78 K . Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm-1 (0.1 to 1.1 THz). The superconducting energy scales, i.e., the critical temperature Tc, the pairing energy Δ , and the superfluid stiffness J , and the superfluid density ns can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.

  10. Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kim-Ngan, N.-T.H., E-mail: tarnawsk@up.krakow.p [Institute of Physics, Pedagogical University, Podchorazych 2, 30-084 Krakow (Poland); Balogh, A.G. [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Havela, L. [Faculty of Mathematics and Physics, Charles University, 12116 Prague 2 (Czech Republic); Gouder, T. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, 76125 Karlsruhe (Germany)

    2010-06-15

    Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He{sup +} ions. The films were prepared by reactive DC sputtering at the temperatures of -200 {sup o}C, +25 {sup o}C and +300 {sup o}C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at -200 {sup o}C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U-N-Si-O layers at the interface. The sample irradiation by 1 MeV Ar{sup +} ion beam with ion fluence of about 1.2-1.7 x 10{sup 16} ions/cm{sup 2} caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at -200 {sup o}C and at +25 {sup o}C, but almost no change in the film thickness was detected for the film deposited at +300 {sup o}C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 x 10{sup 16} ions/cm{sup 2}.

  11. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces

    CERN Document Server

    Oshima, C

    1997-01-01

    In this article, we have reviewed the recent progress of the experimental studies on ultra-thin films of graphite and hexagonal boron nitride (h-BN) by using angle-resolved electron spectroscopy together with other techniques. The fundamental properties of these high-quality films are discussed on the basis of the data on dispersion relations of valence electrons, phonon dispersion etc. The interfacial orbital mixing of the pi-state of the monolayer graphite (MG) with the d states of the reactive substrates is the origin for the phonon softening, expansion of the nearest-neighbour C-C distance, modification of the pi-band, low work function, and two-dimensional plasmons with high electron density, etc. In the cases of weak mixing at the interface between the MG and relatively inert substrates, the observed properties of the MG are very close to the bulk ones. In contrast to the case for MG, the interfacial interaction between the h-BN monolayer and the substrate is weak. (author)

  12. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo-Vega, C. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C. (Mexico)]. E-mail: gallardo@ccmc.unam.mx; Cruz, W. de la [Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C. (Mexico)

    2006-09-15

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10{sup -2} to 1.3 x 10{sup -1} Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu{sub 3}N) and x = 0.25 (Cu{sub 4}N) when the nitrogen pressure is 1.3 x 10{sup -1} and 5 x 10{sup -2} Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.

  13. Microwave-assisted polyol synthesis of carbon nitride dots from folic acid for cell imaging.

    Science.gov (United States)

    Guan, Weiwei; Gu, Wei; Ye, Ling; Guo, Chenyang; Su, Su; Xu, Pinxiang; Xue, Ming

    2014-01-01

    A green, one-step microwave-assisted polyol synthesis was employed to prepare blue luminescent carbon nitride dots (CNDs) using folic acid molecules as both carbon and nitrogen sources. The as-prepared CNDs had an average size of around 4.51 nm and could be well dispersed in water. Under excitation at 360 nm, the CNDs exhibited a strong blue luminescence and the quantum yield was estimated to be 18.9%, which is greater than that of other reported CNDs. Moreover, the CNDs showed low cytotoxicity and could efficiently label C6 glioma cells, demonstrating their potential in cell imaging. PMID:25382977

  14. Effect of pressure on the deposition of hydrogen-free amorphous carbon and carbon nitride films by the pulsed cathodic arc discharge method

    International Nuclear Information System (INIS)

    Hydrogen-free amorphous carbon (a-C) and carbon nitride (a-C:N) films were deposited using the pulsed cathodic arc discharge at different argon and nitrogen pressures. The surface and mechanical properties of these films were found to strongly depend on the gas pressure. The tetrahedral amorphous carbon and hard a-C:N films with smooth surfaces (rms roughness: 0.15 nm) were prepared at lower gas pressures (-2 Pa). Incorporation of an increasing amount of nitrogen in a-C:N films caused a decrease in film hardness. All the films were covered with the thin (0.3-2 nm) graphite-like surface layers. The film hardness was correlated to the soft surface layer thickness, and the films with thinner surface layers exhibit higher hardness. The mean energies of pulsed plasma beams were measured as the functions of argon and nitrogen pressures. The mean energies of plasma beams decrease in an exponential fashion with increasing gas pressure due to the carbon ion collisions with the neutral gas species. The effects of mean energies of deposited species on the film deposition were explained in terms of the thermal spike migration of surface atoms. The formation of graphite-like surface layers is associated with the low-energy deposition process. The low-energy (10 eV) species may produce the strong thermal spike at film surface, and contribute to the formation of sp3 bonded structure at a sp3 bonded matrix

  15. Thermal conduction mechanisms in isotope-disordered boron nitride and carbon nanotubes

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Stewart, Derek

    2009-03-01

    We present first principles studies which determine dominant effects limiting the heat conduction in isotope-disordered boron nitride and carbon nanotubes [1]. Using an ab initio atomistic Green's function approach, we demonstrate that localization cannot be observed in the thermal conductivity measurements [1], and that diffusive scattering is the dominant mechanism which reduces the thermal conductivity [2]. We also give concrete predictions of the magnitude of the isotope effect on the thermal conductivities of carbon and boron nitride single-walled nanotubes [2]. We furthermore show that intershell scattering is not the main limiting mechanism for the heat flow through multi-walled boron nitride nanotubes [1], and that heat conduction restricted to a few shells leads to the low thermal conductivities experimentally measured [1]. We consequently successfully compare the results of our calculations [3] with the experimental measurements [1]. [1] C. W. Chang, A. M. Fennimore, A. Afanasiev, D. Okawa, T. Ikuno, H. Garcia, D. Li, A. Majumdar, A. Zettl, Phys. Rev. Lett. 2006, 97, 085901. [2] I. Savic, N. Mingo, D. A. Stewart, Phys. Rev. Lett. 2008, 101, 165502. [3] I. Savic, D. A. Stewart, N. Mingo, to be published.

  16. Oxygen Reduction Electrocatalysts Based on Coupled Iron Nitride Nanoparticles with Nitrogen-Doped Carbon

    Directory of Open Access Journals (Sweden)

    Min Jung Park

    2016-06-01

    Full Text Available Aimed at developing a highly active and stable non-precious metal electrocatalyst for oxygen reduction reaction (ORR, a novel FexNy/NC nanocomposite—that is composed of highly dispersed iron nitride nanoparticles supported on nitrogen-doped carbon (NC—was prepared by pyrolyzing carbon black with an iron-containing precursor in an NH3 atmosphere. The influence of the various synthetic parameters such as the Fe precursor, Fe content, pyrolysis temperature and pyrolysis time on ORR performance of the prepared iron nitride nanoparticles was investigated. The formed phases were determined by experimental and simulated X-ray diffraction (XRD of numerous iron nitride species. We found that Fe3N phase creates superactive non-metallic catalytic sites for ORR that are more active than those of the constituents. The optimized Fe3N/NC nanocomposite exhibited excellent ORR activity and a direct four-electron pathway in alkaline solution. Furthermore, the hybrid material showed outstanding catalytic durability in alkaline electrolyte, even after 4,000 potential cycles.

  17. Surface/interface analysis and optical properties of RF sputter-deposited nanocrystalline titanium nitride thin films

    International Nuclear Information System (INIS)

    Titanium nitride (TiNx) thin films were grown by radio-frequency (RF) magnetron sputter deposition by varying the nitrogen content in the reactive gas mixture over a wide range. The effect of nitrogen gas flow rate on the surface and interface morphology, chemical composition and optical properties of TiN thin films was studied employing atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Analysis of the optical properties probed with SE has shown that films deposited at low (0–5 sccm) nitrogen flow rates have the highest absorption at energies 2 flow rate, remaining consistent thereafter. SEM cross-sectional imaging analysis indicates the dense, columnar structure for the films grown at lower nitrogen flow rates. XPS analysis of atomic composition and the chemical states indicate that the atomic composition remained nearly constant while the chemical states varied significantly among the samples as a function of N2 flow rate. XPS analyses confirm the presence of TiNx, TiO2 and TiOxNy. These process–property relationships derived could be useful for defining and expanding the range of optical and electronic applications of titanium nitrides and (oxy)nitrides.

  18. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  19. Effect of Nitridation Time on the Surface Hardness of Medium Carbon Steels (AISI 1045)

    International Nuclear Information System (INIS)

    It has been investigated the effect of nitridation time on the surface hardness of medium carbon steels (AISI 1045). Parameters determining to the results were flow rate of the nitrogen gas, temperature and time. In this experiments, sample having diameter of 15 mm, thick 2 mm placed in tube of glass with diameter 35 mm heated 550 oC, flow rate and temperature were kept constants, 100 cc/minutes and 550 oC respectively, while the time were varied from 5, 10, 20 and 30 hours. It was found, that for the nitridation time of 5, 10, 20, and 30 hours, the surface hardness increased from 145 VHN to, 23.7, 296.8, 382.4 and 426.1 VHN, respectively. (author)

  20. Direct growth of graphene on gallium nitride using C2H2 as carbon source

    Science.gov (United States)

    Wang, Bing; Zhao, Yun; Yi, Xiao-Yan; Wang, Guo-Hong; Liu, Zhi-Qiang; Duan, Rui-Rei; Huang, Peng; Wang, Jun-Xi; Li, Jin-Min

    2016-04-01

    Growing graphene on gallium nitride (GaN) at temperatures greater than 900°C is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830°C was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.

  1. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Science.gov (United States)

    Broas, M.; Liu, X.; Ge, Y.; Mattila, T. T.; Paulasto-Kröckel, M.

    2015-06-01

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiNx thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiNx part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiNx. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ˜100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  2. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  3. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    International Nuclear Information System (INIS)

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiNx thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiNx part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiNx. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests

  4. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    Science.gov (United States)

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  5. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  6. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    Science.gov (United States)

    Schubert, M.; Rheinländer, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; Woollam, J. A.; Hahn, J.; Richter, F.

    1997-11-01

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material.

  7. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    International Nuclear Information System (INIS)

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. copyright 1997 The American Physical Society

  8. Structural and optical characterization of pure Si-rich nitride thin films

    Science.gov (United States)

    Debieu, Olivier; Nalini, Ramesh Pratibha; Cardin, Julien; Portier, Xavier; Perrière, Jacques; Gourbilleau, Fabrice

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiN x>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiN x0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiN x>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

  9. Mechanical properties measurement of silicon nitride thin films using the bulge test

    Science.gov (United States)

    Lee, Hun Kee; Ko, Seong Hyun; Han, Jun Soo; Park, HyunChul

    2007-12-01

    The mechanical properties of silicon nitride films are investigated. Freestanding films of silicon nitride are fabricated using the MEMS technique. The films were deposited onto (100) silicon wafers by LPCVD (Low Pressure Chemical Vapor Deposition). Square and rectangular membranes are made by anisotropic etching of the silicon substrates. Then the bulge test for silicon nitride film was carried out. The thickness of specimens was 0.5, 0.75 and 1μm respectively. By testing both square and rectangular membranes, the reliability and valiant-ness of bulge test with regard to the shape of specimens was investigated. Also considering residual stress in the films, one can evaluate the Young's modulus from experimental load-deflection curves. Young's modulus of the silicon nitride films was about 232GPa. The residual stress is below 100MPa.

  10. Chemically Modulated Carbon Nitride Nanosheets for Highly Selective Electrochemiluminescent Detection of Multiple Metal-ions.

    Science.gov (United States)

    Zhou, Zhixin; Shang, Qiuwei; Shen, Yanfei; Zhang, Linqun; Zhang, Yuye; Lv, Yanqin; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-06-01

    Chemical structures of two-dimensional (2D) nanosheet can effectively control the properties thus guiding their applications. Herein, we demonstrate that carbon nitride nanosheets (CNNS) with tunable chemical structures can be obtained by exfoliating facile accessible bulk carbon nitride (CN) of different polymerization degree. Interestingly, the electrochemiluminescence (ECL) properties of as-prepared CNNS were significantly modulated. As a result, unusual changes for different CNNS in quenching of ECL because of inner filter effect/electron transfer and enhancement of ECL owing to catalytic effect were observed by adding different metal ions. On the basis of this, by using various CNNS, highly selective ECL sensors for rapid detecting multiple metal-ions such as Cu(2+), Ni(2+), and Cd(2+) were successfully developed without any labeling and masking reagents. Multiple competitive mechanisms were further revealed to account for such enhanced selectivity in the proposed ECL sensors. The strategy of preparing CNNS with tunable chemical structures that facilely modulated the optical properties would open a vista to explore 2D carbon-rich materials for developing a wide range of applications such as sensors with enhanced performances. PMID:27187874

  11. Microwave-assisted polyol synthesis of carbon nitride dots from folic acid for cell imaging

    Directory of Open Access Journals (Sweden)

    Guan WW

    2014-10-01

    Full Text Available Weiwei Guan,1,* Wei Gu,2,* Ling Ye,2 Chenyang Guo,1 Su Su,1 Pinxiang Xu,1,3 Ming Xue1,3 1Department of Pharmacology, School of Basic Medical Sciences, Capital Medical University, Beijing, People’s Republic of China; 2Department of Chemical Biology, School of Chemical Biology and Pharmaceutical Sciences, Capital Medical University, Beijing, People’s Republic of China; 3Beijing Laboratory for Biomedical Detection Technology and Instrument, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: A green, one-step microwave-assisted polyol synthesis was employed to prepare blue luminescent carbon nitride dots (CNDs using folic acid molecules as both carbon and nitrogen sources. The as-prepared CNDs had an average size of around 4.51 nm and could be well dispersed in water. Under excitation at 360 nm, the CNDs exhibited a strong blue luminescence and the quantum yield was estimated to be 18.9%, which is greater than that of other reported CNDs. Moreover, the CNDs showed low cytotoxicity and could efficiently label C6 glioma cells, demonstrating their potential in cell imaging. Keywords: carbon nitride dots (CNDs, folic acid, photoluminescence, cell imaging

  12. Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

    OpenAIRE

    Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

    2013-01-01

    We perform first-principles calculations to investigate the structural and electronic properties of metal-doped (10, 0) carbon nanotubes (CNTs) on a single hexagonal boron nitride (hBN) sheet in the presence of an external electric field. We consider K, Cl and Ni atoms as dopants to study the dependence of the electronic properties of the CNT on doping polarity and concentration. The electric field strength is varied from -0.2 V/\\AA to +0.2 V/\\AA to explore the effects of an external electric...

  13. Synthesis and Characterization of Zinc Phthalocyanine/Meso porous Carbon Nitride

    International Nuclear Information System (INIS)

    In this work, zinc phthalocyanine (ZnPc) was impregnated onto meso porous carbon nitride (m-C3N4) to expand the absorption to longer wavelength than that of the bare m-C3N4. The characterization result showed that the synthesized m-C3N4 was thermally stable until 450 degree Celsius. The presence of ZnPc on the m-C3N4 was confirmed from the respective diffraction patterns and absorption spectra. Thus, it is expected that the ZnPc/ m- C3N4 would be a potential photo catalyst for reactions conducted under visible light irradiation. (author)

  14. Coaxial nanocable: silicon carbide and silicon oxide sheathed with boron nitride and carbon

    Science.gov (United States)

    Zhang; Suenaga; Colliex; Iijima

    1998-08-14

    Multielement nanotubes comprising multiple phases, with diameters of a few tens of nanometers and lengths up to 50 micrometers, were successfully synthesized by means of reactive laser ablation. The experimentally determined structure consists of a beta-phase silicon carbide core, an amorphous silicon oxide intermediate layer, and graphitic outer shells made of boron nitride and carbon layers separated in the radial direction. The structure resembles a coaxial nanocable with a semiconductor-insulator-metal (or semiconductor-insulator-semiconductor) geometry and suggests applications in nanoscale electronic devices that take advantage of this self-organization mechanism for multielement nanotube formation. PMID:9703508

  15. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    International Nuclear Information System (INIS)

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation

  16. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  17. Simulation of single-electron state density for one-wall nanotubes from carbon and boron nitride

    International Nuclear Information System (INIS)

    The single-electron density is calculated for all possible geometrical configurations of the one-wall nanotubes from carbon and boron nitride. The calculation is accomplished through the numerical differentiation of the two-dimensional dispersion ratios for the graphite and hexagonal boron nitride by all permitted values of the wave vector. The π-electron approximation was applied. Good agreement of the energy gaps between the symmetrical singularities in the density of the single-electron states and experimental data obtained through the method of the resonance combination light scattering is demonstrated by the example of the concrete carbon nanotubes

  18. Large quantity production of carbon and boron nitride nanotubes by mechano-thermal process

    International Nuclear Information System (INIS)

    Full text: Nanotube materials including carbon and boron nitride have excellent properties compared with bulk materials. The seamless graphene cylinders with a high length to diameter ratio make them as superstrong fibers. A high amount of hydrogen can be stored into nanotubes as future clean fuel source. Theses applications require large quantity of nanotubes materials. However, nanotube production in large quantity, fully controlled quality and low costs remains challenges for most popular synthesis methods such as arc discharge, laser heating and catalytic chemical decomposition. Discovery of new synthesis methods is still crucial for future industrial application. The new low-temperature mechano-thermal process discovered by the current author provides an opportunity to develop a commercial method for bulk production. This mechano-thermal process consists of a mechanical ball milling and a thermal annealing processes. Using this method, both carbon and boron nitride nanotubes were produced. I will present the mechano-thermal method as the new bulk production technique in the conference. The lecture will summarise main results obtained. In the case of carbon nanotubes, different nanosized structures including multi-walled nanotubes, nanocells, and nanoparticles have been produced in a graphite sample using a mechano-thermal process, consisting of I mechanical milling at room temperature for up to 150 hours and subsequent thermal annealing at 1400 deg C. Metal particles have played an important catalytic effect on the formation of different tubular structures. While defect structure of the milled graphite appears to be responsible for the formation of small tubes. It is found that the mechanical treatment of graphite powder produces a disordered and microporous structure, which provides nucleation sites for nanotubes as well as free carbon atoms. Multiwalled carbon nanotubes appear to grow via growth of the (002) layers during thermal annealing. In the case of BN

  19. Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2012-06-01

    Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

  20. Zr N and Zr O2 production by zirconium carbon nitridation (Zr Si O4)

    International Nuclear Information System (INIS)

    Structural ceramics based on nitrides, oxynitrides like, Zr N-Si3 N4 and Zr O2 Si2 O N2 have good thermal and mechanical properties, with curves in technological applications. Many obtention methods are propose, but carbonitriding reactions (carbon reduction and simultaneous nitriding) of zircon (Zr O2 Si O2) may be interest because a low cost raw material is used. In this work the carbonitriding of zircon and the principal reaction conditions: carbon quantity, N2 flow, temperature and reaction time are studied. The phases formed were followed using XRD and the weight loss of the samples. The final products were: Zr N with low content of Si C and/or Si3 N4 or the monoclinic form of Zr O2. The products be obtained can be predicted according to the reaction conditions employed. During the reaction Si O(g) loss is observed and silica can be completely eliminated if reaction conditions are adjusted. (author)

  1. Mechanical and Structural Properties of Graphene-like Carbon Nitride Sheets

    CERN Document Server

    de Sousa, J M; Perim, E; Bizao, R A; Galvao, Douglas S

    2016-01-01

    Carbon nitride-based nanostructures have attracted special attention (from theory and experiments) due to their remarkable electromechanical properties. In this work we have investigated the mechanical properties of some graphene-like carbon nitride membranes through fully atomistic reactive molecular dynamics simulations. We have analyzed three different structures of these CN families, the so-called graphene-based g-CN, triazine-based g-C3N4 and heptazine-based g-C3N4. The stretching dynamics of these membranes was studied for deformations along their two main axes and at three different temperatures: 10K, 300K and 600K. We show that g-CN membranes have the lowest ultimate fracture strain value, followed by heptazine-based and triazine-based ones, respectively. This behavior can be explained in terms of their differences in terms of density values, topologies and types of chemical bonds. The dependency of the fracture patterns on the stretching directions is also discussed.

  2. An alkali treating strategy for the colloidization of graphitic carbon nitride and its excellent photocatalytic performance.

    Science.gov (United States)

    Cheng, Fuxing; Yan, Jing; Zhou, Chenjuan; Chen, Binhe; Li, Peiran; Chen, Zhi; Dong, Xiaoping

    2016-04-15

    The colloid of graphitic carbon nitride (g-C3N4) was of great importance for practical application. Herein we introduced an alkali treatment route to efficiently colloidize g-C3N4 under mild conditions by destroying the hydrogen bonds between linearly polymeric melon chains and hydrolyzing partial C−NH−C bonds linked two tri-s-triazine units. The obtained colloidal suspension was extremely stable due to its negative charges on surface, and the particle size of several hundred nanometers and the nanobelt-like morphology were revealed by electron microscopy and dynamic light scattering technologies. The structural, optical and functional group analysis demonstrated that the structure of CN heterocycles was preserved after the alkali treatment, and the produced colloidal g-C3N4 can be re-assembled by an electrostatic interaction. Moreover, contributing to the reduced electron-hole recombination, the photocatalytic performance of restacked carbon nitride colloids had more enhanced photocatalytic performance than bulk g-C3N4. PMID:26835580

  3. Li and Na Co-decorated carbon nitride nanotubes as promising new hydrogen storage media

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu Sheng [Center of Clean Energy and Quantum Structures, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan, 450052 (China); College of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou, Henan, 450011 (China); Li, Meng; Wang, Fei; Sun, Qiang [Center of Clean Energy and Quantum Structures, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan, 450052 (China); Jia, Yu, E-mail: jiayu@zzu.edu.cn [Center of Clean Energy and Quantum Structures, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan, 450052 (China)

    2012-01-09

    The capacity of Li and Na co-decorated carbon nitride nanotube (CNNT) for hydrogen storage is studied using first-principles density functional theory. The results show that with two H{sub 2} molecules attached to per Li and four H{sub 2} molecules per Na the Li and Na co-decorated CNNT gains a gravimetric density of H{sub 2} as high as 9.09 wt% via electrostatic interaction without the clustering of the deposited metal atoms (at T=0 K). The average adsorption energy of hydrogen molecule is in the range of 0.09–0.22 eV/H{sub 2}, which is suitable for practical hydrogen storage at ambient temperatures. -- Highlights: ► Li and Na co-decorated carbon nitride nanotubes as hydrogen storage media. ► The gravimetric density of H{sub 2} is 9.09 wt%. ► The average adsorption energy of hydrogen molecule is 0.09–0.22 eV/H{sub 2}. ► It can operate under ambient thermodynamic conditions.

  4. Highly Efficient Quantum Sieving in Porous Graphene-like Carbon Nitride for Light Isotopes Separation

    Science.gov (United States)

    Qu, Yuanyuan; Li, Feng; Zhou, Hongcai; Zhao, Mingwen

    2016-01-01

    Light isotopes separation, such as 3He/4He, H2/D2, H2/T2, etc., is crucial for various advanced technologies including isotope labeling, nuclear weapons, cryogenics and power generation. However, their nearly identical chemical properties made the separation challenging. The low productivity of the present isotopes separation approaches hinders the relevant applications. An efficient membrane with high performance for isotopes separation is quite appealing. Based on first-principles calculations, we theoretically demonstrated that highly efficient light isotopes separation, such as 3He/4He, can be reached in a porous graphene-like carbon nitride material via quantum sieving effect. Under moderate tensile strain, the quantum sieving of the carbon nitride membrane can be effectively tuned in a continuous way, leading to a temperature window with high 3He/4He selectivity and permeance acceptable for efficient isotopes harvest in industrial application. This mechanism also holds for separation of other light isotopes, such as H2/D2, H2/T2. Such tunable quantum sieving opens a promising avenue for light isotopes separation for industrial application.

  5. Integrated oxygen-doping and dye sensitization of graphitic carbon nitride for enhanced visible light photodegradation.

    Science.gov (United States)

    Liu, Shizhen; Sun, Hongqi; Ang, H M; Tade, Moses O; Wang, Shaobin

    2016-08-15

    Graphitic carbon nitride (GCN) is a promising metal-free photocatalyst while suffering from low charge mobility induced inefficient photocatalysis. In this work, oxygen doping was employed to enhance the photodegradation of organic pollutants in water on graphitic carbon nitride (GCNO) under visible light. For further absorption extension, four organic dyes (Eosin-Y, Perylene, Nile-red and Coumarin) were adopted to dye-sensitize the GCNO photocatalyst. It was found that O-doping can promote dye sensitization, which was dependent on the type of dyes and influenced the photodegradation efficiencies of methylene blue (MB) and phenol. Nile-red sensitized GCNO presented the best activity in MB degradation under λ>480nm irradiations while Eosin-Y showed the best sensitization performance for phenol degradation under λ>420nm light source. However, dye sensitization was not effective for enhanced pollutant degradation on GCN without O-doping. UV-vis diffuse reflectance spectra (UV-vis DRS), photoluminescence (PL) spectra, and photocurrent analyses were applied to investigate the mechanism of carriers' transfer, which indicated that dye molecules could inject extra electrons into GCNO energy band and the energy dislocation could suppress electron/hole recombination, enhancing photocatalytic performances. PMID:27218807

  6. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Volpi, F., E-mail: fabien.volpi@simap.grenoble-inp.fr; Braccini, M.; Pasturel, A. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Devos, A. [IEMN, UMR 8520 CNRS, Avenue Poincarré - CS 60069 - 59652 Villeneuve d' Ascq Cedex (France); Raymond, G. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Morin, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France)

    2014-07-28

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm{sup 3}, respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films

  7. Preparation of carbon nitride fine powder by laser induced gas-phase reactions

    Science.gov (United States)

    Alexandrescu, R.; Huisken, F.; Pugna, G.; Crunteanu, A.; Petcu, S.; Cojocaru, S.; Cireasa, R.; Morjan, I.

    We present the possibility of carbon nitride fine powder synthesis by sensitized laser pyrolysis of acethylene/nitrous oxide/ammonia mixtures. The powders were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and IR transmission measurements. It was found that nitrogen was incorporated in powders and that in the carbon-nitrogen phases formed, the presence of the triple bonded C≡N was not detected. The majority of X-ray diffraction data suggests the presence of a mixture of the predicted α- and β-C3N4 structure, with an α-C3N4-like form being prevalent. The powders were found to be slightly contaminated by SF6 sensitizer products. Our results suggest that by improving the experimental parameters this contamination might be reduced and that the laser pyrolysis method offers possibilities for production of CxNy materials, with controlled composition.

  8. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  9. In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

    2011-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  10. In situ mechanical property measurements of amorphous carbon-boron nitride nanotube nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Carpena Núñez, Jennifer; Siochi, Emilie J.; Wise, Kristopher E.; Lin, Yi; Connell, John W.; Smith, Michael W.

    2012-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  11. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 107 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si3N4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si3N4 are compared to results on similar devices with SiO2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  12. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    Science.gov (United States)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  13. Hollow porous carbon nitride immobilized on carbonized nanofibers for highly efficient visible light photocatalytic removal of NO.

    Science.gov (United States)

    Wu, Hongxin; Chen, Dongyun; Li, Najun; Xu, Qingfeng; Li, Hua; He, Jinghui; Lu, Jianmei

    2016-06-01

    With the deterioration of air quality, great efforts were devoted to designing various photocatalysts for effective removal of NOx in air. However, the present photocatalysts have a fatal problem of low photocatalytic efficiency. In this work, a hollow porous carbon nitride nanosphere coupled with reduced graphene oxide (HCNS/rGO) was exploited as a visible-light photocatalyst to remove nitrogen monoxide in air at a low concentration (600 ppb level) under irradiation of an energy saving lamp. HCNS/rGO showed a NO removal ratio of 64%, which was superior to that of most other visible-light photocatalysts. The excellent photocatalytic ability of HCNS/rGO originates from the hollow porous morphology of HCNS and the grafted rGO on the surface. HCNS/rGO was immobilized on porous carbonized polymer nanofibers to obtain a photocatalytic membrane without affecting photocatalytic efficiency. Furthermore, the membrane showed excellent photochemical stability and recyclability. PMID:27245319

  14. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    International Nuclear Information System (INIS)

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  15. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Zobelli, A

    2007-10-15

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  16. Merging Single-Atom-Dispersed Silver and Carbon Nitride to a Joint Electronic System via Copolymerization with Silver Tricyanomethanide.

    Science.gov (United States)

    Chen, Zupeng; Pronkin, Sergey; Fellinger, Tim-Patrick; Kailasam, Kamalakannan; Vilé, Gianvito; Albani, Davide; Krumeich, Frank; Leary, Rowan; Barnard, Jon; Thomas, John Meurig; Pérez-Ramírez, Javier; Antonietti, Markus; Dontsova, Dariya

    2016-03-22

    Herein, we present an approach to create a hybrid between single-atom-dispersed silver and a carbon nitride polymer. Silver tricyanomethanide (AgTCM) is used as a reactive comonomer during templated carbon nitride synthesis to introduce both negative charges and silver atoms/ions to the system. The successful introduction of the extra electron density under the formation of a delocalized joint electronic system is proven by photoluminescence measurements, X-ray photoelectron spectroscopy investigations, and measurements of surface ζ-potential. At the same time, the principal structure of the carbon nitride network is not disturbed, as shown by solid-state nuclear magnetic resonance spectroscopy and electrochemical impedance spectroscopy analysis. The synthesis also results in an improvement of the visible light absorption and the development of higher surface area in the final products. The atom-dispersed AgTCM-doped carbon nitride shows an enhanced performance in the selective hydrogenation of alkynes in comparison with the performance of other conventional Ag-based materials prepared by spray deposition and impregnation-reduction methods, here exemplified with 1-hexyne. PMID:26863408

  17. Hollow porous carbon nitride immobilized on carbonized nanofibers for highly efficient visible light photocatalytic removal of NO

    Science.gov (United States)

    Wu, Hongxin; Chen, Dongyun; Li, Najun; Xu, Qingfeng; Li, Hua; He, Jinghui; Lu, Jianmei

    2016-06-01

    With the deterioration of air quality, great efforts were devoted to designing various photocatalysts for effective removal of NOx in air. However, the present photocatalysts have a fatal problem of low photocatalytic efficiency. In this work, a hollow porous carbon nitride nanosphere coupled with reduced graphene oxide (HCNS/rGO) was exploited as a visible-light photocatalyst to remove nitrogen monoxide in air at a low concentration (600 ppb level) under irradiation of an energy saving lamp. HCNS/rGO showed a NO removal ratio of 64%, which was superior to that of most other visible-light photocatalysts. The excellent photocatalytic ability of HCNS/rGO originates from the hollow porous morphology of HCNS and the grafted rGO on the surface. HCNS/rGO was immobilized on porous carbonized polymer nanofibers to obtain a photocatalytic membrane without affecting photocatalytic efficiency. Furthermore, the membrane showed excellent photochemical stability and recyclability.With the deterioration of air quality, great efforts were devoted to designing various photocatalysts for effective removal of NOx in air. However, the present photocatalysts have a fatal problem of low photocatalytic efficiency. In this work, a hollow porous carbon nitride nanosphere coupled with reduced graphene oxide (HCNS/rGO) was exploited as a visible-light photocatalyst to remove nitrogen monoxide in air at a low concentration (600 ppb level) under irradiation of an energy saving lamp. HCNS/rGO showed a NO removal ratio of 64%, which was superior to that of most other visible-light photocatalysts. The excellent photocatalytic ability of HCNS/rGO originates from the hollow porous morphology of HCNS and the grafted rGO on the surface. HCNS/rGO was immobilized on porous carbonized polymer nanofibers to obtain a photocatalytic membrane without affecting photocatalytic efficiency. Furthermore, the membrane showed excellent photochemical stability and recyclability. Electronic supplementary information

  18. Group III-nitride thin films grown using MBE and bismuth

    Science.gov (United States)

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  19. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  20. Constructing a novel carbon nitride/polyaniline/ZnO ternary heterostructure with enhanced photocatalytic performance using exfoliated carbon nitride nanosheets as supports.

    Science.gov (United States)

    Pandiselvi, Kannusamy; Fang, Huaifang; Huang, Xiubo; Wang, Jingyu; Xu, Xiaochan; Li, Tao

    2016-08-15

    Graphitic carbon nitride (CN) is an emerging photocatalyst with promising prospect, but presently it still falls short on photocatalytic efficiency and photoresponsive range. We herein constructed a novel ternary heterostructure by hybridization of conducting polymer and semiconductor with CN. The exfoliated two dimension CN nanosheets (CN-NSs) are superior to bulk CN as both catalysts and supporting materials. Most recently, there are few reports involving the construction of heterojunction photocatalysts using CN-NSs as supports. The improvement of charge separation efficiency, specific surface area and visible light harvesting is simultaneously achieved in such a novel ternary heterostructure due to the synergetic effect of polyaniline (PANI) and ZnO coupling. As a result, the CN-NS/PANI/ZnO photocatalyst possesses excellent visible photocatalytic performance for MB and 4-CP degradation with a rate constant of 0.026 and 0.0049min(-1), which is about 3.6 and 3.3 times of CN, respectively. The enhanced mechanism is proposed based on the confirmation of OH and h(+) as main oxidative species. Overall, this work can not only yield high-efficient visible photocatalysts but also provide deeper insight into the enhanced mechanisms of CN-NS-based ternary heterostructure. PMID:27107237

  1. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  2. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    Science.gov (United States)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V‑1 sec‑1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  3. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

    Science.gov (United States)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm(2) V(-1) sec(-)1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  4. Dielectric response of carbon and boron nitride nanotubes from first-principles calculations

    Science.gov (United States)

    Kozinsky, Boris; Marzari, Nicola

    2007-03-01

    We present a complete characterization of the dielectric response of isolated single- and multi-wall carbon (CNT) and boron-nitride nanotubes (BNNT) using first-principles calculations and density-functional theory. The longitudinal polarizability of a nanotube is sensitive to the band gap and its radius, and in multi-wall nanotubes and bundles it is trivially given by the sum of the polarizabilities of the constituent tubes. The transverse polarizability of both types of nanotubes is insensitive to band gap and chirality and depends only on the radius. However, the transverse response and screening properties of BNNTs are qualitatively different from those of metallic and semiconducting CNTs. The fundamental differences in electronic properties of the two materials are inherited from the corresponding two-dimensional sheets - graphene and boron-nitride. The screening of the external field in CNTs is stronger than in BNNTs and has a different radius dependence. The transverse response in BNNTs is found to be that of an insulator, while in CNTs it is intermediate between metallic and semiconducting. Our results have practical implications for selective growth of different types of nanotubes using aligning electric fields and for Raman characterization of nanotubes.

  5. Recent advances in the growth, doping and characterization of III V nitride thin films

    Science.gov (United States)

    Davis, Robert F.; Ailey, K. S.; Bremser, M. D.; Carlson, E.; Kern, R. S.; Kester, D. J.; Perry, W. G.; Tanaka, S.; Weeks, T. W.

    Boron nitride thin films have been grown on the (100) surfaces of Si and diamond via ion beam assisted deposition (IBAD) using electron beam evaporation of B in tandem with N and Ar ion bombardment within the ranges of substrate temperature and ion flux of 200-700°C and 0.20-0.30 mA/cm2, respectively. Fourier-transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM) revealed a growth sequence of amorphous (a-BN), hexagonal (h-BN) and cubic (c-BN) layers under most conditions. This sequence is attributed primarily to increasing biaxial compressive stress with film thickness due to ion bombardment and some interstitial Ar incorporation. A minimum substrate temperature of 200-300° C is required for nucleation and growth of single phase c-BN by this technique. The initial stage of AlN film growth on α(6H)-SiC(0001) substrates by plasma-assisted, gas source molecular beam epitaxy has been investigated in terms of growth mode and interface defects. Essentially atomically flat AlN surfaces, indicative of two-dimensional growth, were obtained using on-axis substrates. Island-like features were observed on the vicinal surfaces. The coalescence of latter features gave rise to double positioning boundaries as a result of the misalignment of the Si/C bilayer steps with the Al/N bilayers in the growing films. The quality of the thicker AlN films was strongly influenced by the concentration of these boundaries. Monocrystalline GaN and AlxGa1-x N(0001) (0≤x≤1) films, void of oriented domain structures and associated low-angle grain boundaries and with smooth surface morphologies, have been grown via OMVPE on high-temperature monocrystalline AlN(0001) buffer layers, previously deposited on vicinal α(6H)-SiC(0001) wafers, using TEG, TEA and ammonia in a cold-wall, vertical, pancake-style reactor. Abrupt heterojunctions were demonstrated. The PL spectrum of the pure GaN showed strong near band-edge emissions with a FWHM value of 4 me

  6. A combined SNMS and EFTEM/EELS study on focused ion beam prepared vanadium nitride thin films

    Science.gov (United States)

    Kothleitner, Gerald; Rogers, M.; Berendes, A.; Bock, W.; Kolbesen, B. O.

    2005-09-01

    We investigated the diffusion profiles and core-loss fine-structures (ELNES) of thin vanadium nitride films by electron energy-loss spectroscopy (EELS) and energy filtering transmission electron microscopy (EFTEM). The nitride layers have been produced by rapid thermal processing in a NH 3 or N 2 atmosphere and have then been cross-sectioned with a focused ion beam instrument (FIB) under mild milling conditions to maintain crystallography. For the high-resolution electron energy-loss spectroscopy studies (HREELS), a recently developed TEM gun monochromator, implemented into a 200 kV field emission gun column was used in combination with a new post-column spectrometer. It was found that, dependent on substrate and atmosphere, layers with different vanadium and nitrogen content were formed, showing distinct differences in their ELNES. With an energy resolution at the 0.2 eV level and a TEM beam spot size of approximately 2 nm these layers could be unambiguously identified when compared to theoretical ELNES simulations from the literature.

  7. Magnetic graphitic carbon nitride anion exchanger for specific enrichment of phosphopeptides.

    Science.gov (United States)

    Zhu, Gang-Tian; He, Xiao-Mei; Chen, Xi; Hussain, Dilshad; Ding, Jun; Feng, Yu-Qi

    2016-03-11

    Anion-exchange chromatography (AEX) is one of the chromatography-based methods effectively being used for phosphopeptide enrichment. However, the development of AEX materials with high specificity toward phosphopeptides is still less explored as compared to immobilized metal affinity chromatography (IMAC) or metal oxide affinity chromatography (MOAC). In this work, magnetic graphitic carbon nitride (MCN) was successfully prepared and introduced as a promising AEX candidate for phosphopeptide enrichment. Due to the extremely abundant content of nitrogen with basic functionality on the surface, this material kept excellent retention for phosphopeptides at pH as low as 1.8. Benefiting from the large binding capacity at such low pH, MCN showed remarkable specificity to capture phosphopeptides from tryptic digests of standard protein mixtures as well as nonfat milk and human serum. In addition, MCN was also applied to selective enrichment of phosphopeptides from the tryptic digests of rat brain lysate and 2576 unique phosphopeptides were successfully identified. PMID:26884140

  8. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ram Sevak, E-mail: singh915@gmail.com [Department of Physics, National Institute of TechnologyKurukshetra 136119 (Haryana) (India)

    2015-11-15

    Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  9. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    International Nuclear Information System (INIS)

    Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices

  10. Invisible Security Ink Based on Water-Soluble Graphitic Carbon Nitride Quantum Dots.

    Science.gov (United States)

    Song, Zhiping; Lin, Tianran; Lin, Lihua; Lin, Sen; Fu, Fengfu; Wang, Xinchen; Guo, Liangqia

    2016-02-18

    Stimuli-responsive photoluminescent (PL) materials have been widely used as fluorescent ink for data security applications. However, traditional fluorescent inks are limited in maintaining the secrecy of information because the inks are usually visible by naked eyes either under ambient light or UV-light illumination. Here, we introduced metal-free water-soluble graphitic carbon nitride quantum dots (g-CNQDs) as invisible security ink for information coding, encryption, and decryption. The information written by the g-CNQDs is invisible in ambient light and UV light, but it can be readable by a fluorescence microplate reader. Moreover, the information can be encrypted and decrypted by using oxalic acid and sodium bicarbonate as encryption reagent and decryption reagent, respectively. Our findings provide new opportunities for high-level information coding and protection by using water-soluble g-CNQDs as invisible security ink. PMID:26797811

  11. Photocatalytically Active Oligomeric Graphitic Carbon Nitride: Conformational Flexibility, Electronic Levels, Carrier Localization

    Science.gov (United States)

    Blum, Volker; Lau, Vincent; Botari, Tiago; Huhn, William; Lotsch, Bettina V.

    2015-03-01

    Polymers consisting of bridged heptazine units (often called ``graphitic carbon nitride'' or ``g-C3N4'') show considerable promise as photocatalysts for solar hydrogen evolution. Recent experimental evidence suggests that oligomeric rather than fully polymerized ``g-C3N4'' exhibits increased intrinsic photocatalytic activity. Using density-functional theory (DFT; van der Waals corrected PBE functional for conformers, hybrid DFT and GW for electronic levels), we show that considerable conformational flexibility exists for the heptazine trimers and tetramers. Analysis of HOMO and LUMO locations as well as trends in photocatalytic activity among heptazine oligomers and polymers reveals the NH2 groups of the oligomers as potential charge-transfer sites. We show that conformational variations of the oligomers can lead to significant, electrostatically motivated carrier localization effects. We suggest that NH2 side groups and the intrinsic conformational variations of the oligomeric species lead to the observed enhanced catalytic activity.

  12. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Directory of Open Access Journals (Sweden)

    Ram Sevak Singh

    2015-11-01

    Full Text Available Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0, armchair (3, 3, and chiral (4, 2 structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  13. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

    Directory of Open Access Journals (Sweden)

    Shaestagir Chowdhury

    2008-04-01

    Full Text Available An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET, temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.

  14. Ultra fine carbon nitride nanocrystals synthesized by laser ablation in liquid solution

    International Nuclear Information System (INIS)

    Crystalline carbon nitride nanopowders and nanorods have been successfully synthesized at room temperature and pressure using the novel technique of pulsed laser ablation of a graphite target in liquid ammonia solution. High-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and Fourier transform infrared spectroscopy (FTIR) were used to systematically study the morphology, nanostructure and chemical bonding. The experimental composition and structure of the nanoparticles are consistent with the theoretical calculations for α-C3N4. After 2 h ablation the particles had a size distribution ∼8-12 nm, whereas after 5 h ablation the particles had grown into nanorod-like structures with a crystalline C3N4 tip. A formation mechanism for these nanorods is proposed whereby nanoparticles are first synthesized via rapid formation of an embryonic particle, followed by a slow growth, eventually leading to a one-dimensional nanorod structure

  15. Boron Nitride Coated Carbon Nanotube Arrays with Enhanced Compressive Mechanical Property

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Tan, Dunlin; Zhang, Bowei; Tok, Alfred Iing Yoong; Teo, Edwin Hang Tong

    Vertically aligned carbon nanotube (CNT) array is one of the most promising energy dissipating materials due to its excellent temperature invariant mechanical property. However, the CNT arrays with desirable recoverability after compression is still a challenge. Here, we report on the mechanical enhancement of the CNT arrays reinforced by coating with boron nitride (BN) layers. These BN coated CNT (BN/CNT) arrays exhibit excellent compressive strength and recoverability as compared to those of the as-prepared CNT arrays which totally collapsed after compression. In addition, the BN coating also provides better resistance to oxidation due to its intrinsic thermal stability. This work presented here opens a new pathway towards tuning mechanical behavior of any arbitrary CNT arrays for promising potential such as damper, vibration isolator and shock absorber applications.

  16. Interacting Carbon Nitride and Titanium Carbide Nanosheets for High-Performance Oxygen Evolution.

    Science.gov (United States)

    Ma, Tian Yi; Cao, Jian Liang; Jaroniec, Mietek; Qiao, Shi Zhang

    2016-01-18

    Free-standing flexible films, constructed from two-dimensional graphitic carbon nitride and titanium carbide (with MXene phase) nanosheets, display outstanding activity and stability in catalyzing the oxygen-evolution reaction in alkaline aqueous system, which originates from the Ti-N(x) motifs acting as electroactive sites, and the hierarchically porous structure with highly hydrophilic surface. With this excellent electrocatalytic ability, comparable to that of the state-of-the-art precious-/transition-metal catalysts and superior to that of most free-standing films reported to date, they are directly used as efficient cathodes in rechargeable zinc-air batteries. Our findings reveal that the rational interaction between different two-dimensional materials can remarkably promote the oxygen electrochemistry, thus boosting the entire clean energy system. PMID:26629779

  17. Harvesting solar light with crystalline carbon nitrides for efficient photocatalytic hydrogen evolution

    KAUST Repository

    Bhunia, Manas Kumar

    2014-08-14

    Described herein is the photocatalytic hydrogen evolution using crystalline carbon nitrides (CNs) obtained by supramolecular aggregation followed by ionic melt polycondensation (IMP) using melamine and 2,4,6-triaminopyrimidine as a dopant. The solid state NMR spectrum of 15N-enriched CN confirms the triazine as a building unit. Controlling the amount and arrangements of dopants in the CN structure can dramatically enhance the photocatalytic performance for H2 evolution. The polytriazine imide (PTI) exhibits the apparent quantum efficiency (AQE) of 15% at 400 nm. This method successfully enables a substantial amount of visible light to be harvested for H2 evolution, and provides a promising route for the rational design of a variety of highly active crystalline CN photocatalysts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  19. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    OpenAIRE

    S. Reboh; Morin, P.; Hÿtch, M. J.; Houdellier, F.; Claverie, A

    2013-01-01

    To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate ...

  20. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  1. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  2. SHG spectroscopy of gallium nitride thin films on sapphire with ultrashort pulses

    Science.gov (United States)

    Angerer, William Edward

    We present results of ultrafast second-harmonic generation spectroscopy of GaN/Alsb2Osb3 samples. We develop a formalism to calculate the nonlinear response of thin nonlinear films excited by an ultrashort laser source (Ti:Alsb2Osb3), and we use this formalism to extract chisbsp{zxx}{(2)}(omega=2omegasb{o}) and chisbsp{xzx}{(2)}(omega=2omegasb{o}) from our SHG measurements over a two photon energy range of 2.6-3.4 eV. By comparing spectra from several samples, we find a weak sub-band gap enhancement of chisbsp{zxx}{(2)}(omega=2omegasb{o}) at a two photon energy of 2.80 eV that is not present in chisbsp{xzx}{(2)}(omega=2omegasb{o}). This enhancement is independent of the carrier concentration, intentional doping, and presence of the "yellow luminescence band" defects. This feature may result from a three photon process involving a midgap defect state. We analyze three photon processes that include a defect state with group theory and demonstrate that several processes contribute to chisbsp{zxx}{(2)}(omega=2omegasb{o}) but not to chisbsp{xzx}{(2)}(omega=2omegasb{o}). In addition, we determined sample orientational miscuts by rotational SHG, and we found that these miscuts do not generate strain induced interface states. We determined a Sellmeier dispersion relationship for the index of refraction of GaN by a novel light transmission method, and we report on photoluminescence of our GaN/Alsb2Osb3 samples. In a second project we have designed and built a nonlinear optical microscope. We have used the new tool to perform preliminary investigations of the nonlinear optical properties of carbon nanoropes. We suggest that nonlinear optical microscopy is a potentially useful technique for analyzing carbon nanotube symmetry, as well as in studies of other heterogeneities. Finally, we place an upper limit on the dominant second order hyperpolarizability, alphasbsp{zzz}{(2)}, of carbon nanotubes based on our nonlinear optical microscopy measurements.

  3. Synthesis of carbon nitride powder by selective etching of TiC0.3N0.7 in chlorine-containing atmosphere at moderate temperature

    International Nuclear Information System (INIS)

    We reported the synthesis of carbon nitride powder by extracting titanium from single inorganic precursor TiC0.3N0.7 in chlorine-containing atmosphere at ambient pressure and temperature not exceeding 500 deg. C. The TiC0.3N0.7 crystalline structure acted as a template, supplying active carbon and nitrogen atoms for carbon nitride when it was destroyed in chlorination. X-ray diffraction data showed that the obtained carbon nitride powders were amorphous, which was in good agreement with transmission electron microscope analysis. The composition and structure of carbon nitride powders were analyzed by employing Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Results indicated that disorder structure was most likely for the carbon nitride powders and the N content depended greatly on the chlorination temperature. Thermal analysis in flowing N2 indicated that the mass loss started from 300 deg. C and the complete decomposition occurred at around 650 deg. C, confirming the low thermal stability of the carbon nitride material.

  4. Nano-solenoid: helicoid carbon-boron nitride hetero-nanotube

    Science.gov (United States)

    Zhang, Zi-Yue; Miao, Chunyang; Guo, Wanlin

    2013-11-01

    As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano-solenoid can generate a uniform and tremendous magnetic field of more than 1 tesla, closing to that generated by the main magnet of medical nuclear magnetic resonance. Moreover, the magnitude of magnetic field can be easily modulated by bias voltage, providing great promise for a nano-inductor to realize electromagnetic conversion at the nanoscale.As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano

  5. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    International Nuclear Information System (INIS)

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN

  6. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  7. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation.

    Science.gov (United States)

    Roosta, Sara; Hashemianzadeh, Seyed Majid; Ketabi, Sepideh

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were -4.128kcalmol(-1) and -2457.124kcalmol(-1) respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was -281.937kcalmol(-1) which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (-374.082 and -245.766kcalmol(-1)) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. PMID:27287103

  8. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    Directory of Open Access Journals (Sweden)

    S. Reboh

    2013-10-01

    Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  9. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    Science.gov (United States)

    Reboh, S.; Morin, P.; Hytch, M. J.; Houdellier, F.; Claverie, A.

    2013-10-01

    To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  10. 非晶碳氮纳米尖端的微结构和发光机理%Microstructure and Photoluminescence Mechanism of Amorphous Carbon Nitride Nanotips

    Institute of Scientific and Technical Information of China (English)

    王必本; 谢焕玲; 陈玉安; 董国波

    2012-01-01

    利用等离子体增强热丝化学气相沉积系统,用CH4、H2和N2为反应气体,在Si衬底上制备了碳氮纳米尖端.用扫描电子显微镜和显微Raman光谱仪对其进行了表征.在室温下测试了它的发光性能,发光谱由中心约为406 nm和506 nm的两条发光带组成.根据Raman散射谱,对其微结构进行了分析.结合非晶碳氮薄膜的结构和发光机理,分析了它的发光性能.%Carbon nitride nanotips were prepared on silicon substrate in plasma-enhanced hot fila ment chemical vapor deposition system, in which methane, hydrogen and nitrogen were used as the reaction gases. The carbon nitride nanotips were characterized by scanning electron microscopy and micro-Raman spectroscopy. The photoluminescence of the carbon nitride nanotips was measured at room temperature and the photoluminescence spectrum shows two emission bands at 406 and 506 nm. Combined with the Raman spectrum, the microstructure of the carbon nitride was analyzed. Ac cording to the structure and photoluminescence mechanism of amorphous carbon nitride films, the photoluminescence of carbon nitride nanotips was studied.

  11. Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

    International Nuclear Information System (INIS)

    High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.

  12. Coaxial carbon@boron nitride nanotube arrays with enhanced thermal stability and compressive mechanical properties.

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Huang, Jingfeng; Tan, Dunlin; Zhang, Bowei; Teo, Edwin Hang Tong; Tok, Alfred Iing Yoong

    2016-06-01

    Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability. CNT arrays are grown using a commercially available thermal chemical vapor deposition (TCVD) technique and an outer BNNT with a wall thickness up to 1.37 nm is introduced by a post-growth TCVD treatment. Importantly, compared to the as-grown CNT arrays which deform almost plastically upon compression, the coaxial C@BNNT arrays exhibit an impressive ∼4-fold increase in compressive strength with nearly full recovery after the first compression cycle at a 50% strain (76% recovery maintained after 10 cycles), as well as a significantly high and persistent energy dissipation ratio (∼60% at a 50% strain after 100 cycles), attributed to the synergistic effect between the CNT and outer BNNT. Additionally, the as-prepared C@BNNT arrays show an improved structural stability in air at elevated temperatures, attributing to the outstanding thermal stability of the outer BNNT. This work provides new insights into tailoring the mechanical and thermal behaviours of arbitrary CNT arrays which enables a broader range of applications. PMID:27227818

  13. Metal-functionalized single-walled graphitic carbon nitride nanotubes: a first-principles study on magnetic property

    Directory of Open Access Journals (Sweden)

    Shenoy Vivek

    2011-01-01

    Full Text Available Abstract The magnetic properties of metal-functionalized graphitic carbon nitride nanotubes were investigated based on first-principles calculations. The graphitic carbon nitride nanotube can be either ferromagnetic or antiferromagnetic by functionalizing with different metal atoms. The W- and Ti-functionalized nanotubes are ferromagnetic, which are attributed to carrier-mediated interactions because of the coupling between the spin-polarized d and p electrons and the formation of the impurity bands close to the band edges. However, Cr-, Mn-, Co-, and Ni-functionalized nanotubes are antiferromagnetic because of the anti-alignment of the magnetic moments between neighboring metal atoms. The functionalized nanotubes may be used in spintronics and hydrogen storage.

  14. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  15. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    International Nuclear Information System (INIS)

    Recombination at silicon nitride (SiNx) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH3) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH3 plasma exposure causes (i) an increase in the density of Si≡N3 groups in both SiNx and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiNx/c-Si interface, and (iv) a reduction in the density of positive charge in SiNx. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiNx or a-Si. It is therefore important for device performance to minimize NH3 plasma exposure of SiNx or a-Si passivating films during subsequent fabrication steps

  16. Carbon Doped MgB2 Thin Films using TMB

    Science.gov (United States)

    Wilke, R. H. T.; Li, Qi; Xi, X. X.; Lamborn, D. R.; Redwing, J.

    2007-03-01

    The most effective method to enhance the upper critical field in MgB2 is through carbon doping. In the case of thin films, ``alloying'' with carbon has resulted in enhanced Hc2 values estimated to be as high as 70 T for H parallel to ab and 40 T for H perpendicular ab [1]. ``Alloying'' refers to the in-situ Hybrid Physical-Chemical Vapor Deposition (HPCVD) of carbon containing MgB2 films using (C5H5)2Mg as the carbon source. While these films exhibit enhanced Hc2 values, there are amorphous boron- carbon phases in the grain boundaries that reduce the cross section area for superconducting current. We present here the results of our attempts to make more homogeneously carbon doped thin films using gaseuous trimethyl-boron (TMB) as the carbon source. Initial results indicate different behavior upon carbon doping using TMB from carbon-alloying. The microstructures and upper critical fields of the carbon doped films using TMB and carbon alloyed films will be compared. [1] V. Braccini et al., Phys. Rev. B 71 (2005) 012504. [2] A.V. Pogrebnyakov et al., Appl. Phys. Lett 85 (2004) 2017.

  17. The thermal conductivity of embedded nano-aluminum nitride-doped multi-walled carbon nanotubes in epoxy composites containing micro-aluminum nitride particles

    International Nuclear Information System (INIS)

    Amino-functionalized nano-aluminum nitride (nano-AlN) particles were doped onto the surfaces of chlorinated multi-walled carbon nanotubes (MWCNTs) to act as fillers in thermally conducting composites. These synthesized materials were embedded in epoxy resin. Then, the untreated micro-aluminum nitride (micro-AlN) particles were added to this resin, whereby the composites filled with nano-AlN-doped MWCNTs (0, 0.5, 1, 1.5, 2 wt%) and micro-AlN (25.2, 44.1, 57.4 vol%) were fabricated. As a result, the thermal diffusivity and conductivity of all composites continuously improved with increasing nano-AlN-doped MWCNT content and micro-AlN filler loading. The thermal conductivity reached its maximum, which was 31.27 times that of the epoxy alone, when 2 wt% nano-AlN-doped MWCNTs and 57.4 vol% micro-AlN were added to the epoxy resin. This result is due to the high aspect ratio of the MWCNTs and the surface polarity of the doped nano-AlN and micro-AlN particles, resulting in the improved thermal properties of the epoxy composite. (paper)

  18. The thermal conductivity of embedded nano-aluminum nitride-doped multi-walled carbon nanotubes in epoxy composites containing micro-aluminum nitride particles

    Science.gov (United States)

    Choi, Seran; Im, Hyungu; Kim, Jooheon

    2012-02-01

    Amino-functionalized nano-aluminum nitride (nano-AlN) particles were doped onto the surfaces of chlorinated multi-walled carbon nanotubes (MWCNTs) to act as fillers in thermally conducting composites. These synthesized materials were embedded in epoxy resin. Then, the untreated micro-aluminum nitride (micro-AlN) particles were added to this resin, whereby the composites filled with nano-AlN-doped MWCNTs (0, 0.5, 1, 1.5, 2 wt%) and micro-AlN (25.2, 44.1, 57.4 vol%) were fabricated. As a result, the thermal diffusivity and conductivity of all composites continuously improved with increasing nano-AlN-doped MWCNT content and micro-AlN filler loading. The thermal conductivity reached its maximum, which was 31.27 times that of the epoxy alone, when 2 wt% nano-AlN-doped MWCNTs and 57.4 vol% micro-AlN were added to the epoxy resin. This result is due to the high aspect ratio of the MWCNTs and the surface polarity of the doped nano-AlN and micro-AlN particles, resulting in the improved thermal properties of the epoxy composite.

  19. Unique Static Magnetic and Dynamic Electromagnetic Behaviors in Titanium Nitride/Carbon Composites Driven by Defect Engineering

    OpenAIRE

    Chunhong Gong; Hongjie Meng; Xiaowei Zhao; Xuefeng Zhang; Laigui Yu; Jingwei Zhang; Zhijun Zhang

    2016-01-01

    Recently, the defect-induced static magnetic behaviours of nanomaterials have been a cutting-edge issue in diluted magnetic semiconductor materials. However, the dynamic magnetic properties of nanomaterials are commonly ignored if their bulk counterparts are non-magnetic. In the present research, titanium nitride-carbon (TiN/C) nanocomposites were found to exhibit both static and dynamic magnetic properties that vary in the opposite trend. Moreover, novel unconventional electromagnetic resona...

  20. Polymeric Graphitic Carbon Nitride Doped with CuO Dispersed on Dealuminated Clinoptilolite (CuO/HCP): Synthesis and Characterisation

    OpenAIRE

    Saheed Olalekan Sanni; Omoruyi Gold Idemudia

    2015-01-01

    CuO dispersed on dealuminated clinoptilolite (CuO/HCP) and further doped with polymeric graphitic carbon nitride (CuO/HCP-g-C3N4) was synthesized through 2 facile routes: precipitation method for CuO/HCP and impregnation through ultrasonication method for the hybrid composite material. The hybrid composite material crystalline phase, surface morphology, and structural and thermal properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-r...

  1. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Muratore, Christopher [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton, Dayton, Ohio 45409 (United States); Jespersen, Michael L.; Hu, Jianjun [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton Research Institute, Dayton, Ohio 45409 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Voevodin, Andrey A., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  2. Iron-Doped Carbon Nitride-Type Polymers as Homogeneous Organocatalysts for Visible Light-Driven Hydrogen Evolution.

    Science.gov (United States)

    Gao, Lin-Feng; Wen, Ting; Xu, Jing-Yin; Zhai, Xin-Ping; Zhao, Min; Hu, Guo-Wen; Chen, Peng; Wang, Qiang; Zhang, Hao-Li

    2016-01-13

    Graphitic carbon nitrides have appeared as a new type of photocatalyst for water splitting, but their broader and more practical applications are oftentimes hindered by the insolubility or difficult dispersion of the material in solvents. We herein prepared novel two-dimensional (2D) carbon nitride-type polymers doped by iron under a mild one-pot method through preorganizing formamide and citric acid precursors into supramolecular structures, which eventually polycondensed into a homogeneous organocatalyst for highly efficient visible light-driven hydrogen evolution with a rate of ∼16.2 mmol g(-1) h(-1) and a quantum efficiency of 0.8%. Laser photolysis and electrochemical impedance spectroscopic measurements suggested that iron-doping enabled strong electron coupling between the metal and the carbon nitride and formed unique electronic structures favoring electron mobilization along the 2D nanomaterial plane, which might facilitate the electron transfer process in the photocatalytic system and lead to efficient H2 evolution. In combination with electrochemical measurements, the electron transfer dynamics during water reduction were depicted, and the earth-abundant Fe-based catalyst may open a sustainable strategy for conversion of sunlight into hydrogen energy and cope with current challenging energy issues worldwide. PMID:26650485

  3. Carbon emission reduction potentials through thinned wood in Japan

    Directory of Open Access Journals (Sweden)

    Ninomiya H

    2011-06-01

    Full Text Available Substituting fossil fuel with woody biomass for bioelectricity production has great potentials for carbon emission reductions while increasing forest productivity to increase carbon sequestration and improve ecological functionalities. Until recently, study on such potentials was very limited. Beginning in 2007, Japan’s special budgets were allocated for a 6-year intensive thinning on about 3.3 million ha of young stands for increasing carbon sinks in Japanese forests to meet the capped amount of 47.7 Tg CO2 year-1 allowed under the Marrakesh Accord. Because of only 30% of the thinned wood were used for sawntimber, CO2 and CH4 must have been emitted from the disposed thinned wood and wood waste. Such emissions and reduction potentials need to be assessed to provide future alternatives for climate change mitigation. We assessed carbon emission reduction potentials when woody biomass from thinned wood is fully utilized for bioelectricity production as compared with the generation of the same amount of energy produced under coal, oil, and natural gas scenarios. Our analytical results show that if all disposed thinned wood and wood waste are utilized to generate energy, about 62.6, 58.3, and 37.8 Tg CO2 year-1 could be prevented from emitting depending on emission scenarios or about 33.2, 30.9, and 20.0% of Japan’s reduction commitment to the Kyoto Protocol. On the other hand, if thinned wood and wood waste are not utilized, about 13.4 Tg CO2 year-1 would be released due to thinning. Our results suggest that incentives to reducing emission reductions in forest sector in the future climate change mitigation agreements will likely lead to large emission reductions, otherwise leakages due to thinning are unavoidable.

  4. Formation of Silicon/Carbon Core-Shell Nanowires Using Carbon Nitride Nanorods Template and Gold Catalyst

    Directory of Open Access Journals (Sweden)

    Ilyani Putri Jamal

    2013-01-01

    Full Text Available In this experiment, silicon/carbon (Si/C core-shell nanowires (NWs were synthesized using gold nanoparticles (Au NPs coated carbon nitride nanorods (CN NRs as a template. To begin with, the Au NPs coated CN NRs were prepared by using plasma-enhanced chemical vapor deposition assisted with hot-wire evaporation technique. Fourier transform infrared spectrum confirms the C–N bonding of the CN NRs, while X-ray diffraction pattern indicates the crystalline structure of the Au NPs and amorphous structure of the CN NRs. The Au NPs coated CN NRs were thermally annealed at temperature of 800°C in nitrogen ambient for one hour to induce the growth of Si/C core-shell NWs. The growth mechanism for the Si/C core-shell NWs is related to the nitrogen evolution and solid-liquid-solid growth process which is a result of the thermal annealing. The formation of Si/C core-shell NWs is confirmed by electron spectroscopic imaging analysis.

  5. Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

    Science.gov (United States)

    Choudhuri, Indrani; Kumar, Sourabh; Mahata, Arup; Rawat, Kuber Singh; Pathak, Biswarup

    2016-07-01

    High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices.High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices. Electronic supplementary information (ESI

  6. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  7. Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

    CERN Document Server

    Coiffard, G; Driessen, E F C; Pignard, S; Calvo, M; Catalano, A; Goupy, J; Monfardini, A

    2015-01-01

    We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 Hz/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.

  8. Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

    CERN Document Server

    Kinsey, Nathaniel; Courtwright, Devon; DeVault, Clayton; Bonner, Carl E; Gavrilenko, Vladimir I; Shalaev, Vladimir M; Hagan, David J; Van Stryland, Eric W; Boltasseva, Alexandra

    2015-01-01

    Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

  9. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  10. Effect of the nanoscratch resistance of indium nitride thin films in the etching duration

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Wen-Nong, E-mail: nong88@yam.com [Department of Mechanical Engineering, National Central University, Chung-Li, Taiwan (China); Department of Vehicle Engineering, Army Academy, Chung-Li, Taiwan (China); Shih, Teng-Shih [Department of Mechanical Engineering, National Central University, Chung-Li, Taiwan (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer We evaluated the tribological properties of InN films/AlN buffer/Si. Black-Right-Pointing-Pointer The measured values of friction upon increasing the etching duration. Black-Right-Pointing-Pointer Low In-N density of InN films at longer etching duration to decay resistance and plastic deformation. - Abstract: This study present the nanotribological behavior of single-crystalline indium nitride (InN) films onto aluminum nitride (AlN) buffer layers on Si(1 1 1) substrates. The surface morphology and friction ({mu}) were analyzed using atomic force microscopy and nanoscratch system. It is confirmed that the normal force (F{sub n}) measured values of {mu} of the InN films, from 10 to 60 min of etching duration, were in the range from 0.2 to 0.43 for F{sub n} = 2000 {mu}N; 0.25 to 0.58 for F{sub n} = 6000 {mu}N, respectively. It is suggested that the measured values of {mu} is slightly increased based on the etching duration due to the etching effect on the grain boundary and reduce film quality of InN films. From morphological observations, we compared the sliding resistance against contact-induced damage of the InN films in the presented ploughed of the area. It is confirmed that the contact sliding line is observable due to the increased F{sub n}, the following investigation with friction curve and lateral force is studied.

  11. Preparation of thin carbon films (1963)

    International Nuclear Information System (INIS)

    Carbon deposits have been prepared on silica glass supports in order to determine more accurately than by weighing the losses liable to occur during oxidation, for example under irradiation in the presence of CO2. Several processes have been studied with a view to obtaining deposits for which the variation in optical density as a function of carbon departure shall be reproducible for each sample. Among the methods used, the most satisfactory is that in which the pyrolytic carbon deposited on a carbon filament is evaporated; however only the samples prepared simultaneously exhibit the required identical behaviour. The carbonaceous deposits have been studied by micro-electronic diffraction. An examination of the photographs shows the presence of graphite monocrystals of about (30 μ)2. (author)

  12. Graphitic carbon nitride nanosheet-based multicolour fluorescent nanoprobe for multiplexed analysis of DNA

    International Nuclear Information System (INIS)

    We demonstrate that nanosheets composed of graphitic carbon nitride (g-C3N4) can serve as a low-cost and efficient fluorescent nanoprobe for the multiplexed detection of DNA in solution. The strategy is based on the finding that g-C3N4 is capable of binding dye-labeled single-stranded DNA (ssDNA) which results in quenching of the fluorescence of the dye. If target DNA hybridizes with dye-labeled ssDNA, the interaction between dye-labeled ssDNA and g-C3N4 is weakened, and this results in desorption of the dsDNA from the surface of the g-C3N4 and in recovery of fluorescence. The large surface area of g-C3N4 nanosheets allows for simultaneous quenching of multicolor DNA probes labeled with different dyes, leading to the development of multiplexed DNA sensors for the detection of multiple DNA targets in a single solution. By using one 15-mer DNA fragment and one 18-mer DNA fragment as proof-of-principle analytes, the method displayed good analytical performance. The limits of detection are 75 and 62 pM, respectively. The method is simple and sensitive, and was used to detect DNA in serum samples. We perceive that this method represents a new approach towards multiplexed assays for applications in DNA monitoring, clinical diagnosis, and in the detection of genetic disorders. (author)

  13. Graphene-like carbon nitride layers: stability, porosity, band gaps, and magnetic ground states

    Science.gov (United States)

    Chacham, Helio; da Silva-Araujo, Joice; Brito, Walber

    In the present work, we investigate the relative stability and electronic properties of carbon nitride (CxNy) graphene-like structures using a combination of a new bond-counting method and density-functional-theory (DFT) first-principles calculations. We obtain analytical and numerical results for the energetics and the morphology of graphene-like CxNy For instance, at high N concentrations, the bond-counting method allows us to search among millions of possible structures, and we find several ones with ab initio formation energies per N atom comparable to, or even smaller than, that of the isolated graphitic N impurity. Those structures are characterized by a variety of nanoporous graphene morphologies. The low-energy C-N structures also present a variety of band gaps, from zero to 1.6 eV, which can be tuned by stoichiometry and porosity. Several structures also present ferro- and antiferromagnetic ground states. We thank support from CNPq, CAPES, and FAPEMIG.

  14. Time-Resolved Study on Xanthene Dye-Sensitized Carbon Nitride Photocatalytic Systems.

    Science.gov (United States)

    Zhang, Huiyu; Li, Shuang; Lu, Rong; Yu, Anchi

    2015-10-01

    Dye sensitization is a promising strategy to extend the visible light absorption of carbon nitride (C3N4) and increase the photocatalytic hydrogen evolution efficiency of C3N4 under visible light irradiation. However, the interaction dynamics between C3N4 and a sensitized dye has not been reported in the literature. Herein, we selected four commonly used xanthene dyes such as fluorescein, dibromofluorescein, eosin Y, and erythrosine B and prepared their corresponding dye-sensitized-C3N4 composites. For the first time, we derived the electron transfer rate from the LUMO of each photoexcited xanthene dye to the conduction band of C3N4 using picoesecond time-resolved fluorescence measurements. We also obtained the reduction potentials of all selected xanthene dyes and C3N4 with cyclic voltammetry measurements. The cyclic voltammetry measurements gave a consistent result with the picosecond time-resolved fluorescence measurements. Besides, the possibility of the selected xanthene dye as an acceptor for the hole of the photoexcited C3N4 was also discussed. We believe this study is significant for the researcher to understanding the fundamental aspects in the xanthene dye-sensitized-C3N4 photocatalytic systems. PMID:26389679

  15. Carbon nitride nanotube as a sensor for alkali and alkaline earth cations

    International Nuclear Information System (INIS)

    Highlights: ► Adsorption of alkali and alkaline earth cations on a CN nanotube studied by DFT. ► The alkaline cation adsorption may raise potential barrier of the electron emission. ► The tube may act as a sensor in the presence of alkali and alkaline cations. - Abstract: Adsorption of several alkali (Li+, Na+, and K+) and alkaline earth (Be2+, Mg2+, and Ca2+) cations on the surface of a zigzag (9, 0) carbon nitride nanotube has been investigated using density functional theory. It has been found that almost all of the cations prefer to be strongly chemisorbed at the center of porous site of the tube surface. The adsorption of alkaline cations much more influences the electronic properties of the tube, in comparison with the alkali ones, so that it is transformed from an intrinsic semiconductor with HOMO/LUMO energy gap of 4.02 eV to extrinsic p-type one with the gap of 0.54–1.94 eV. The alkaline cation adsorption may significantly raise potential barrier of the electron emission from the tube surface, hence impeding the field emission. It has been also concluded that the electrical sensitivity of the tube toward the cations may be in the order: Be2+ ≫ Mg2+ ≫ Ca2+ ≫ Li+ ∼ Na+ ∼ K+.

  16. The investigation of carbon nitride films prepared at various arc currents by vacuum cathode arc method

    International Nuclear Information System (INIS)

    The carbon nitride films have been prepared in the arc currents range of 20-60 A at the Ar/N2 atmosphere of 50/400 sccm by the vacuum cathode arc deposition method. The properties of the films were characterized by x-ray photoelectron spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. The N concentration showed a maximum of 35 at% at 20 A and decreased gradually with the arc currents. The films below 40 A consisted of linear polymeric-like component and sp2 graphitic cluster. With the increasing of the arc current from 20 to 40 A, the ID/IG rose and the photoluminescence (PL) fell gradually, which resulted from the development of the sp2 graphitic phase and the decrease of the polymeric-like phase. As a result, the CC bonds increased and sp3CN and sp2CN decreased. Above 40 A, with the increasing of arc currents, ID/IG fell and the PL increased gradually, which reflected the decreasing of sp2 graphitic phase and the modification of C and N atoms in sp2 cluster. The CC bonds and sp3CN fell and the sp2CN rose. The nanohardness of films showed increasing tendency with the arc currents. The variation of the relative ratio and the average energy of N-containing species and C-containing species at the atmosphere would be responsible for the change in the properties of films. (author)

  17. Theoretical investigation of methane adsorption onto boron nitride and carbon nanotubes

    Directory of Open Access Journals (Sweden)

    Masoud Darvish Ganji, Amir Mirnejad and Ali Najafi

    2010-01-01

    Full Text Available Methane adsorption onto single-wall boron nitride nanotubes (BNNTs and carbon nanotubes (CNTs was studied using the density functional theory within the generalized gradient approximation. The structural optimization of several bonding configurations for a CH4 molecule approaching the outer surface of the (8,0 BNNT and (8,0 CNT shows that the CH4 molecule is preferentially adsorbed onto the CNT with a binding energy of −2.84 kcal mol−1. A comparative study of nanotubes with different diameters (curvatures reveals that the methane adsorptive capability for the exterior surface increases for wider CNTs and decreases for wider BNNTs. The introduction of defects in the BNNT significantly enhances methane adsorption. We also examined the possibility of binding a bilayer or a single layer of methane molecules and found that methane molecules preferentially adsorb as a single layer onto either BNNTs or CNTs. However, bilayer adsorption is feasible for CNTs and defective BNNTs and requires binding energies of −3.00 and −1.44 kcal mol−1 per adsorbed CH4 molecule, respectively. Our first-principles findings indicate that BNNTs might be an unsuitable material for natural gas storage.

  18. Detection of Ag(+) using graphite carbon nitride nanosheets based on fluorescence quenching.

    Science.gov (United States)

    Bian, Wei; Zhang, Hao; Yu, Qing; Shi, Meijuan; Shuang, Shaomin; Cai, Zongwei; Choi, Martin M F

    2016-12-01

    The graphite carbon nitride (g-C3N4) nanosheets were synthesized and applied for the detection of Ag(+) ion in aqueous solutions. Transmission electron microscopy, Fourier infrared spectroscopy, x-ray diffraction, ultraviolet/visible and photoluminescence spectroscopy were used for characterization of g-C3N4 nanosheets. The fluorescence intensity of g-C3N4 nanosheets decreases with the increase in the concentration of Ag(+). The fluorescence probe can be applied for detection of Ag(+). The results show that it has high selectivity to Ag(+) and exhibits a good linearity over the concentration range 0.020-2.0μM with a detection limit of 27nM. Most cations do not have any interference on the detection of Ag(+). The quenching process is assessed and discussed. Finally, the g-C3N4 nanosheets have been successfully used for the detection of Ag(+) in real water samples. The recoveries of spiked water samples are >97%. PMID:27348047

  19. Interior edges induced half-metallic ferromagnetism in graphitic carbon nitride structures

    International Nuclear Information System (INIS)

    We study the magnetic properties of graphitic carbon nitride, g-C4N3. A microscopic tight-binding model incorporated with the Hatree mean-field approach is adopted, showing that the g-C4N3 exhibits the significant ferromagnetism induced from the edge states. These edge states appearing on the zigzag boundaries not only ffdeorm the flat band but also upon proper hole doping provide the electrons with single polarized spin exciting to the Dirac linear bands and causes g-C4N3 half-metallic. The half-metallicity survives at room temperature and does not require strong Coulomb repulsion for induction. The ferromagnetism of these states yielding the half-metallicity refers to the broken or imperfectness of the honeycomb lattice structure; specifically, the ferromagnetic states are formed on the zigzag boundaries surrounding the vacancies in the imperfect (some lattice points being missed or removed) honeycomb lattice. We thus indicate that the half-metallicity should be generally reachable in materials of this kind of structure. - Author-Highlights: • The ferromagnetism of g-C4N3 is generated on the zigzag edges of imperfect honeycomb lattice. • The hole doped g-C4N3 is half-metallic at room temperature. • The half-metallicity of g-C4N3 prefers to be induced in stronger Coulomb repulsion

  20. Self-floating graphitic carbon nitride/zinc phthalocyanine nanofibers for photocatalytic degradation of contaminants.

    Science.gov (United States)

    Xu, Tiefeng; Ni, Dongjing; Chen, Xia; Wu, Fei; Ge, Pengfei; Lu, Wangyang; Hu, Hongguang; Zhu, ZheXin; Chen, Wenxing

    2016-11-01

    The effective elimination of micropollutants by an environmentally friendly method has received extensive attention recently. In this study, a photocatalyst based on polyacrylonitrile (PAN)-supported graphitic carbon nitride coupled with zinc phthalocyanine nanofibers (g-C3N4/ZnTcPc/PAN nanofibers) was successfully prepared, where g-C3N4/ZnTcPc was introduced as the catalytic entity and the PAN nanofibers were employed as support to overcome the defects of easy aggregation and difficult recycling. Herein, rhodamine B (RhB), 4-chlorophenol and carbamazepine (CBZ) were selected as the model pollutants. Compared with the typical hydroxyl radical-dominated catalytic system, g-C3N4/ZnTcPc/PAN nanofibers displayed the targeted adsorption and degradation of contaminants under visible light or solar irradiation in the presence of high additive concentrations. According to the results of the radical scavenging techniques and the electron paramagnetic resonance technology, the degradation of target substrates was achieved by the attack of active species, including photogenerated hole, singlet oxygen, superoxide radicals and hydroxyl radicals. Based on the results of ultra-performance liquid chromatography and mass spectrometry, the role of free radicals on the photocatalytic degradation intermediates was identified and the final photocatalytic degradation products of both RhB and CBZ were some biodegradable small molecules. PMID:27239724

  1. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094. ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  2. Coaxial carbon@boron nitride nanotube arrays with enhanced thermal stability and compressive mechanical properties

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Huang, Jingfeng; Tan, Dunlin; Zhang, Bowei; Teo, Edwin Hang Tong; Tok, Alfred Iing Yoong

    2016-05-01

    Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability. CNT arrays are grown using a commercially available thermal chemical vapor deposition (TCVD) technique and an outer BNNT with a wall thickness up to 1.37 nm is introduced by a post-growth TCVD treatment. Importantly, compared to the as-grown CNT arrays which deform almost plastically upon compression, the coaxial C@BNNT arrays exhibit an impressive ~4-fold increase in compressive strength with nearly full recovery after the first compression cycle at a 50% strain (76% recovery maintained after 10 cycles), as well as a significantly high and persistent energy dissipation ratio (~60% at a 50% strain after 100 cycles), attributed to the synergistic effect between the CNT and outer BNNT. Additionally, the as-prepared C@BNNT arrays show an improved structural stability in air at elevated temperatures, attributing to the outstanding thermal stability of the outer BNNT. This work provides new insights into tailoring the mechanical and thermal behaviours of arbitrary CNT arrays which enables a broader range of applications.Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability

  3. SURFACE PHONON AND CONFINED PHONON POLARITONS IN WURTIZTE NITRIDE THIN-FILM STRUCTURES

    OpenAIRE

    L. ZHANG

    2008-01-01

    The polar phonon polariton modes in a wurtzite thin-film structure have been theoretically investigated in the present paper. It has been confirmed that there are two types of phonon polariton modes, i.e., the surface phonon polariton (SPP) modes and the confined phonon polariton (CPP) modes in wurtzite thin-film systems. The frequency ranges of the SPP and CPP modes have been discussed in detail. The dispersive equations for the two types of polarition modes are also deduced. Numerical calcu...

  4. Bond strengths of New Carbon-nitride-Related material C2N2(CH2)

    International Nuclear Information System (INIS)

    A new carbon-nitride-related material C2N2(CH2) nanopletelet was synthesized by subjecting a precursor C3N4HxOy+Au in a laser-heating diamond anvil cell (LHDAC) to the pressure of 40 GPa and the temperature of 1200-2000 K. The synthesized C2N2(CH2) was accordingly found to be an orthorhombic unit cell of the space group Cmc21 with lattice constants a = 7.625Å, b = 4.490Å, and c = 4.047Å. The bulk modulus B0 was determined to be B0 = 258 ± 3.4 GPa, only the 60 % that of the diamond. C2N2(CH2) consists of the tetrahedrally coordinated C with three C-N single bond and the one C-C single bond, and the bridging carbon with the C-CH2-C bond. The C-N single bond length of the tetrahedron ranges from 1.444 to 1.503 Å. This bond length is close to the C-N single bond of 1.447 to 1.458 Å in the superhard β-C3N4. The compressibility of the C-N and C-C single bond of C2N2(CH2) ranges from 0.976 to 0.982 with the pressure of 30 GPa. These values are very close to the compressibility of the C-N and C-C single bond of 0.978 to 0.982 in β-C3N4, cubic-C3N4, and diamond.

  5. The effect of nitrogen incorporation on the bonding structure of hydrogenated carbon nitride films

    International Nuclear Information System (INIS)

    This work describes the composition and bonding structure of hydrogenated carbon nitride (a-CNx:H) films synthesized by electron cyclotron resonance chemical vapor deposition using as precursor gases argon, methane, and nitrogen. The composition of the films was derived from Rutherford backscattering and elastic recoil detection analysis and the bonding structure was examined by infrared (IR) spectroscopy and x-ray absorption near edge spectroscopy (XANES). By varying the nitrogen to methane ratio in the applied gas mixture, polymeric a-CNx:H films with N/C contents varying from 0.06 to 0.49 were obtained. Remarkably, the H content of the films (∼40 at. %) was rather unaffected by the nitrogenation process. The different bonding states as detected in the measured XANES C(1s) and N(1s) spectra have been correlated with those of a large number of reference samples. The XANES and IR spectroscopy results indicate that N atoms are efficiently incorporated into the amorphous carbon network and can be found in different bonding environments, such as pyridinelike, graphitelike, nitrilelike, and amino groups. The nitrogenation of the films results in the formation of N-H bonding environments at the cost of C-H structures. Also, the insertion of N induces a higher fraction of double bonds in the structure at the expense of the linear polymerlike chains, hence resulting in a more cross-linked solid. The formation of double bonds takes place through complex C=N structures and not by formation of graphitic aromatic rings. Also, the mechanical and tribological properties (hardness, friction, and wear) of the films have been studied as a function of the nitrogen content. Despite the major modifications in the bonding structure with nitrogen uptake, no significant changes in these properties are observed

  6. Tungsten nitride nanorods array grown on carbon cloth as an efficient hydrogen evolution cathode at all pH values

    International Nuclear Information System (INIS)

    It is highly desired but still remains a challenging task to develop efficient non-noble-metal hydrogen evolution reaction (HER) electrocatalysts operating efficiently under all pH conditions. In this paper, tungsten nitride nanorods array was developed on carbon cloth (WN NA/CC) through nitridation of corresponding WO3 NA/CC precursor with NH3 as an efficient 3D hydrogen evolution cathode with strong durability in acidic solutions. It needs overpotential of 198 mV to achieve current density of 10 mA cm−2 and it maintains its catalytic activity for at least 60 h. This electrode also performs well under both neutral and alkaline conditions. In addition, this electrode shows nearly 100% Faradaic efficiency at all pH values

  7. Ultra-thin superconducting film coated silicon nitride nanowire resonators for low-temperature applications

    Science.gov (United States)

    Sebastian, Abhilash; Zhelev, Nikolay; de Alba, Roberto; Parpia, Jeevak

    We demonstrate fabrication of high stress silicon nitride nanowire resonators with a thickness and width of less than 50 nm intended to be used as probes for the study of superfluid 3He. The resonators are fabricated as doubly-clamped wires/beams using a combination of electron-beam lithography and wet/dry etching techniques. We demonstrate the ability to suspend (over a trench of depth ~8 µm) wires with a cross section as small as 30 nm, covered with a 20 nm superconducting film, and having lengths up to 50 µm. Room temperature resonance measurements were carried out by driving the devices using a piezo stage and detecting the motion using an optical interferometer. The results show that metalizing nano-mechanical resonators not only affects their resonant frequencies but significantly reduce their quality factor (Q). The devices are parametrically pumped by modulating the system at twice its fundamental resonant frequency, which results in observed amplification of the signal. The wires show self-oscillation with increasing modulation strength. The fabricated nanowire resonators are intended to be immersed in the superfluid 3He. By tracking the resonant frequency and the Q of the various modes of the wire versus temperature, we aim to probe the superfluid gap structure.

  8. Substrate surface polariton splitting due to thin zinc oxide and aluminum nitride films presence

    International Nuclear Information System (INIS)

    Surface polariton (SP) is the non-radiative interface electromagnetic mode, propagating along the interface between two media, if one of them is absorbing (metal, semiconductor or dielectric with the strong absorption bands) and exponentially decaying out of the interface. The introduction of a transition layer at this interface results in the shift and broadening of SP. This effect can be used to obtain film parameters (thickness and optical constants) in the region of SP existence. Zinc oxide (ZnO) films (100–300 nm thick) have been prepared on the LiF and CaF2 substrates and aluminum nitride films (40 and 400 nm thick) have been prepared on sapphire substrates. The SP spectra have been measured by attenuated total reflection (ATR) technique. IFS66v (BRUKER) infrared Fourier-transform spectrometer was used for ATR and near normal incidence external reflection spectral measurements. Angular dependencies of the absorption bands positions in the ATR spectra give the dispersion of SP. The measured SP dispersion is compared with one calculated using the film parameters obtained by dispersion analysis of the external reflectivity spectra. The splitting of the dispersion curves of substrate SP was found. It is due to the resonance interaction of substrate SP with the film optical phonons. This splitting is proportional to the square root of the film thickness. For ZnO films on CaF2 “long range” SPs were observed. These effects allow estimate film complex dielectric function in the region under consideration.

  9. Low-temperature (≤200 °C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    International Nuclear Information System (INIS)

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (2) as co-reactant. This process was developed in a Veeco NEXUS™ chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4–0.5 Å/cycle were achieved. Low electrical resistivity (4 g/cm3), low stress (85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  10. Correlation between stress profiles of cubic boron nitride thin films and the phase sequence revealed from infrared data

    Science.gov (United States)

    Klett, A.; Malavé, A.; Freudenstein, R.; Plass, M. F.; Kulisch, W.

    Cubic boron nitride thin films have been ion-beam-assisted deposited on silicon cantilever structures and subsequently back-etched in order to study the stress evolution and finally the growth mechanisms. After each sputtering step, the film stress, the remaining thickness, and the IR data were examined. In this way, the layered sequence of cBN on top of a hBN base layer, influencing the development of the intrinsic film stress, could be studied in detail. The observed stress distribution can be divided into three regions. First, a non-cubic base layer with a constant stress value is formed, followed by a linear increase in the stress after cBN nucleation as a result of the coalescence of cBN nanocrystals. Finally, the stress reaches a second plateau characteristic of the cBN top layer. In addition, the layered sequence was verified by the evolution of the FTIR spectra. Furthermore, the fraction of the sp2-bonded material of the cBN top layer was determined from the IR data. For various deposition conditions, a linear relationship between the stress of the nanocrystalline cBN top layer and the amount of sp3-bonded material was observed. From this, it can be concluded that stress relaxation occurs at the sp2-bonded grain boundary material. No evidence for stress relaxation after cBN nucleation was found.

  11. Correlation between stress profiles of cubic boron nitride thin films and the phase sequence revealed from infrared data

    Energy Technology Data Exchange (ETDEWEB)

    Klett, A.; Malave, A.; Freudenstein, R.; Plass, M.F.; Kulisch, W. [Kassel Univ. (Gesamthochschule) (Germany). Inst. fuer Technische Physik

    1999-12-01

    Cubic boron nitride thin films have been ion-beam-assisted deposited on silicon cantilever structures and subsequently back-etched in order to study the stress evolution and finally the growth mechanisms. After each sputtering step, the film stress, the remaining thickness, and the IR data were examined. In this way, the layered sequence of cBN on top of a hBN base layer, influencing the development of the intrinsic film stress, could be studied in detail. The observed stress distribution can be divided into three regions. First, a non-cubic base layer with a constant stress value is formed, followed by a linear increase in the stress after cBN nucleation as a result of the coalescence of cBN nanocrystals. Finally, the stress reaches a second plateau characteristic of the cBN top layer. In addition, the layered sequence was verified by the evolution of the FTIR spectra. Furthermore, the fraction of the sp{sup 2}-bonded material of the cBN top layer was determined from the IR data. For various deposition conditions, a linear relationship between the stress of the nanocrystalline cBN top layer and the amount of sp{sup 3}-bonded material was observed. From this, it can be concluded that stress relaxation occurs at the sp{sup 2}-bonded grain boundary material. No evidence for stress relaxation after cBN nucleation was found. (orig.)

  12. Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

    International Nuclear Information System (INIS)

    We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenated silicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH4, NH3 and H2 gases at total flow rates below 33 sccm. Time of flight secondary ion mass spectroscopy reveal that the film surfaces consist of predominantly Si with hydrogenated SixNyOz species. Energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy corroborate on the N/Si ratio. Electron energy loss spectroscopy discloses that the thickness of the nitrogen rich oxidized interface between the SiNx films and the c-Si substrate decrease with an enhancing NH3 flow rate. By varying the NH3 flow rate, dense SiNx films can be realized with hydrogen content between 16 and 9 at.%, a refractive index between 3.5 and 1.9 and optical band gap ranging from 2 to 4.5 eV. The SiNx film stress is compressive for N/Si 0.55. Mechanisms relating the HWCVD conditions and the film structure and properties are proposed.

  13. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    International Nuclear Information System (INIS)

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N2/NH3 environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces

  14. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  15. Chemical bonding in hard and elastic amorphous carbon-nitride films

    Science.gov (United States)

    Gammon, Wesley Jason

    In this study, the chemical bonding in hard and elastic amorphous carbon nitride (a-CNx) films is investigated with x-ray photoelectron spectroscopy (XPS) and 15N, 13C, and 1H nuclear magnetic resonance (NMR) spectroscopy. The films were deposited by DC Magnetron sputtering in a pure nitrogen discharge on Si(001) substrates at 300--400°C. Nanoindentation measurements reveal an elastic modulus of ˜50 GPa and a hardness of ˜5 GPa, thus confirming our films are highly elastic but resist plastic deformation. Our 13C NMR study demonstrates the absence of sp 3-bonded carbon in this material. Collectively, our N(1s) XPS, 13C NMR, and 15N NMR data suggest a film-bonding model that has an aromatic carbon structure with sp2-hybridized nitrogen incorporated in heterocyclic rings. We demonstrate that the nitrogen bonding is predominantly in configurations similar to those in pyridine and pyrrole. In addition, the data indicate that the a-CNx films prepared for this study have low hydrogen content, but are hydrophilic. Specifically, results from 15N and 13C cross polarization (CP) and 1H magic angle spinning (MAS) NMR experiments suggest that nitrogen sites are susceptible to protonation from water absorbed during sample preparation for the NMR experiments. The sensitivity of the surface of a-CNx to water absorption may impact tribological applications for this material. In accord with our XPS and NMR spectroscopic studies on a-CN x films, we propose a film-structure model consisting of buckled graphitic planes that are cross-linked together by sp2 hybridized carbons. The curvature and cross-linking is attributed to a type of compound defect, which is formed by placing a pentagon next to single-atom vacancy in a graphite layer. Our proposed film structure is called the pentagon-with-vacancy-defect (5VD) model. Using Hartree-Fock calculations, we show that the 5VD, film-structure model is compatible with our XPS, NMR, and nanoindentation measurements and with previous

  16. Synthesis and high temperature XRD studies of tantalum nitride thin films prepared by reactive pulsed dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Elangovan, T. [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641 046 (India); Murugeshan, S. [Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.com [Department of Nanoscience and Technology, Bharathiar University, Coimbatore-641 046 (India); Kuppusami, P.; Khan, Shabhana; Sudha, C. [Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Ganesan, V. [UGC-DAE CSR, Indore-452 017 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India)

    2011-06-02

    In the present work, the growth characteristics of tantalum nitride (TaN) thin films prepared on (1 0 0) Si substrates by reactive pulsed DC magnetron sputtering are investigated. XRD analyses indicated the presence of {alpha}-Ta and {beta}-Ta in the films deposited in pure argon atmosphere, while {beta}-TaN and fcc-TaN phases appeared for 2 sccm of nitrogen, and cubic TaN for 5-25 sccm of nitrogen in the sputtering gas mixture of argon and nitrogen at a substrate temperature of 773 K. The TaN films obtained with increasing substrate temperature and pulse width showed a change in the texture from [1 1 1] to [2 0 0] orientation. Atomic force microscopy (AFM) results indicated that the average surface roughness was low for films deposited in pure argon than for the films deposited in a mixed Ar + N{sub 2} atmosphere. Nanocrystalline phase of the deposited material was identified from the high-resolution transmission electron microscopy (HRTEM) images. X-ray photoelectron spectroscopy (XPS) core level spectra confirmed the formation of TaN phase. The high temperature X-ray diffraction analysis of the optimized TaN thin film was performed in the temperature range 298-1473 K. The lattice parameter of the TaN films was found to increase from 4.383 to 4.393 A on increasing the temperature from 298 to 823 K and it reduced to 4.345 A at 1473 K. The thermal expansion coefficient value was found to be negative for the TaN films.

  17. Ultra-thin SiN{sub x} in superlattice via nitridation of a-Si in-situ hot wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Dharmendra Kumar; Solanki, Chetan Singh; Balasubramaniam, K.R., E-mail: bala.kavaipatti@gmail.com

    2014-08-28

    The fabrication of ultra-thin SiN{sub x} (< 2 nm) is a necessary step in third generation photovoltaics, memory, or light-emitting diode applications. Using the low temperature, cheap, scaleable synthesis technique of hot-wire chemical vapor deposition (HWCVD) for this purpose poses many challenges. Here, an approach of fabricating ultra thin SiN{sub x} of thickness ∼ 1.9 nm in a superlattice (SL) structure via nitridation of a-Si layers in-situ HWCVD at 250 °C is reported. Quantum well SL and quantum dot (QD) SL films are realized, wherein SiN{sub x} layers are formed by nitriding a-Si. Both these films investigated by Raman spectroscopy and high resolution transmission electron microscopy, reveal the formation of ultra-thin SiN{sub x} in a SL structure with a-Si, accompanied by sharp interfaces. In addition, annealing of the SL structures, results in QDs of crystalline Si in the a-Si layers, maintaining the SiN{sub x} layer as well as the sharp interface between the SiN{sub x} and a-Si layers of the as-deposited SL structure. - Highlights: • Ultra thin SiN{sub x} is fabricated by hot wire chemical vapor deposition. • SiN{sub x} layer of thickness ∼ 1.9 nm is formed via nitridation of a-Si layer at 250 °C. • Ultra thin SiN{sub x} layers are realized in superlattice films of quantum wells and quantum dots.

  18. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  19. Erbium doping into thin carbon optical layers

    Czech Academy of Sciences Publication Activity Database

    Prajzler, V.; Huttel, I.; Nekvindová, P.; Schrofel, J.; Macková, Anna; Gurovič, J.

    2003-01-01

    Roč. 433, 1/2 (2003), s. 363-366. ISSN 0040-6090 R&D Projects: GA AV ČR KSK1010104 Keywords : carbon layers * erbium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.598, year: 2003

  20. Stabilization of ultrafine metal nanocatalysts on thin carbon sheets

    Science.gov (United States)

    Liu, Xiaofang; Cui, Xinrui; Liu, Yiding; Yin, Yadong

    2015-10-01

    A novel strategy was proposed to anchor ultrafine metal nanoparticles (NPs) on thin carbon sheets for highly stable and efficient heterogeneous catalysts. In this facile approach, a dense monolayer of ultrafine AuNPs was sandwiched between a silica core and a resin shell, followed by carbonization of the shell at a high temperature and then selective removal of the silica core. The shrinkage of the shells during carbonization facilitates partial embedment of the AuNPs on the carbon shell surface and provides superior stability against particle sintering during high temperature/mechanical post-treatments and catalytic reactions. It was also found that diffusion of reactants to the surface of AuNPs could be maximized by reducing the thickness of the hollow shells or simply by cracking the shells into thin carbon sheets, both significantly benefiting the catalytic efficiency. The advantages of this ultra-stable architecture together with the densely dispersed catalytic sites were demonstrated by their high stability and superior catalytic activity in reducing hydrophilic 4-nitrophenol and hydrophobic nitrobenzene.A novel strategy was proposed to anchor ultrafine metal nanoparticles (NPs) on thin carbon sheets for highly stable and efficient heterogeneous catalysts. In this facile approach, a dense monolayer of ultrafine AuNPs was sandwiched between a silica core and a resin shell, followed by carbonization of the shell at a high temperature and then selective removal of the silica core. The shrinkage of the shells during carbonization facilitates partial embedment of the AuNPs on the carbon shell surface and provides superior stability against particle sintering during high temperature/mechanical post-treatments and catalytic reactions. It was also found that diffusion of reactants to the surface of AuNPs could be maximized by reducing the thickness of the hollow shells or simply by cracking the shells into thin carbon sheets, both significantly benefiting the

  1. Investigation of the formation of Al, Fe, N intermetallic phases during Al pack cementation followed by plasma nitriding on plain carbon steel

    International Nuclear Information System (INIS)

    Highlights: • The surface hardness is increased about eight times. • Increasing nitriding time and temperature caused strengthening the Al diffused zone. • The inward diffusion of nitrogen and outward diffusion of iron changed aluminized zone microstructure. • Surface aluminum oxides are reduced by plasma nitriding in low pressure chamber with nitrogen and hydrogen in gas mixture. - Abstract: Plain carbon steels are not suitable for nitriding as they form an extremely brittle case that spalls off readily, and the hardness increment of the diffusion zone is small. In this research, the effect of plasma nitriding time and temperature variation on the microstructure of the pack cemented aluminized plain carbon steel is investigated. All samples were aluminized at 900 °C for 2 h; the aluminized samples were subsequently plasma nitrided at 500 °C, 550 °C and 600 °C for 2.5, 5, 7.5 and 10 h. The phases formed on the sample surface were detected by X-ray diffraction (XRD). The cross section and samples surface were investigated by optical and scanning electron microscopy (SEM). Microhardness test was conducted to determine hardness change from the surface to the sample core. Results showed that by aluminizing the steel, Fe3Al phases as well as Fe–Al solid solution were formed on the surface and some aluminum rich precipitates were formed in solid solution grain boundaries. Plasma nitriding of the aluminized layer caused the formation of aluminum and iron nitride (AlN, Fe4N) on the sample surface. Consequently, surface hardness was improved up to about eight times. By increasing the nitriding temperature and time, aluminum-rich precipitates dissociated. Moreover, due to the diffusion of nitrogen through aluminized region during ion nitriding, iron and aluminum nitrides were formed in aluminized grain boundaries. Increasing nitriding time and temperature lead to the growth of these nitrides in the grain boundaries of the substrate. This phenomenon results in

  2. Advances in targetry with thin diamond-like carbon foils

    CERN Document Server

    Liechtenstein, V K; Olshanski, E D; Repnow, R; Levin, J; Hellborg, R; Persson, P; Schenkel, T

    2002-01-01

    Thin and stable diamond-like carbon (DLC) foils, which were fabricated at the Kurchatov Institute by sputter deposition, have proved recently to be advantageous for stripping and secondary electron timing of high energy heavy ions in a number of accelerator experiments. This resulted in expanding applications of these DLC foils which necessitated further development efforts directed toward the following applications of DLC targetry: (i) thin stripper foils for lower energy tandem accelerators, (ii) enlarged (up to 66 mm in diameter) stop foils for improved time-of-flight elastic recoil detection ion beam analysis, and (iii) ultra-thin (about 0.6 mu g/cm sup 2) DLC foils for some fundamental and applied physics experiments. Along with the fabrication of thin DLC stripper foils for tandem accelerators, much thicker (up to 200 mu g/cm sup 2) foils for post-stripping of heavy-ion beams in higher energy linacs, are within reach.

  3. Vanadium nitride as a novel thin film anode material for rechargeable lithium batteries

    International Nuclear Information System (INIS)

    Vanadium mononitride (VN) thin films have been successfully fabricated by magnetron sputtering. Its electrochemical behaviour with lithium was examined by galvanostatic cell cycling and cyclic voltammetry. The capacity of VN was found to be stable above 800 mAh g-1 after 50 cycles. By using ex situ X-ray diffraction, high-resolution transmission electron microscopy and selected area electron diffraction as well as in situ spectroelectrochemical measurements, the electrochemical reaction mechanism of VN with lithium was investigated. The reversible conversion reaction of VN into metal V and Li3N was revealed. The high reversible capacity and good stable cycle of VN thin film electrode made it a new promising lithium-ion storage material for future rechargeable lithium batteries

  4. Electron energy loss spectroscopy of plasmon resonances in titanium nitride thin films

    Science.gov (United States)

    Herzing, Andrew A.; Guler, Urcan; Zhou, Xiuli; Boltasseva, Alexandra; Shalaev, Vladimir; Norris, Theodore B.

    2016-04-01

    The plasmon resonance characteristics of refractory TiN thin films were analyzed using electron energy-loss spectroscopy (EELS). A bulk plasmon resonance was observed at 2.81 eV and a weaker surface plasmon resonance peak was detected at 2.05 eV. These findings are compared to finite-difference time-domain simulations based on measured optical data. The calculated values for both the bulk and surface resonances (2.74 eV and 2.15 eV, respectively) show reasonable agreement with those measured via EELS. The amplitude of the experimentally observed surface resonance was weaker than that typically encountered in noble metal nanostructures, and this is discussed in the context of electron density and reduced spatial confinement of the resonance mode in the thin-film geometry.

  5. Novel phosphorus doped carbon nitride modified TiO2 nanotube arrays with improved photoelectrochemical performance

    Science.gov (United States)

    Su, Jingyang; Geng, Ping; Li, Xinyong; Zhao, Qidong; Quan, Xie; Chen, Guohua

    2015-10-01

    Novel phosphorus-doped graphitic-carbon nitride (P-C3N4) modified vertically aligned TiO2 nanotube arrays (NTs) were designed and synthesized. They can significantly enhance the conduction and utilization of photogenerated charge carriers of TiO2 NTs. The heterostructure was successfully fabricated through a three-step process: electrochemical anodization and wet-dipping followed by thermal polymerization. The prepared P-C3N4/TiO2 NTs exhibit enhanced light-absorption characteristics and improved charge separation and transfer ability, thus resulting in a 3-fold photocurrent (1.98 mA cm-2 at 0 V vs. Ag/AgCl) compared with that of pure TiO2 NTs (0.66 mA cm-2 at 0 V vs. Ag/AgCl) in 1 M NaOH solution. The prepared P-C3N4/TiO2 NT photoelectrodes also present excellent photocatalytic and photoelectrocatalytic capabilities in the degradation of methylene blue (MB). The kinetic rate of P-C3N4/TiO2 NTs in the photoelectrocatalytic process for MB is 2.7 times that of pristine TiO2 NTs. Furthermore, the prepared sample was used as a photoanode for solar-driven water splitting, giving a H2 evolution rate of 36.6 μmol h-1 cm-2 at 1.0 V vs. RHE under simulated solar light illumination. This novel structure with a rational design for a visible light response shows potential for metal free materials in photoelectrochemical applications.Novel phosphorus-doped graphitic-carbon nitride (P-C3N4) modified vertically aligned TiO2 nanotube arrays (NTs) were designed and synthesized. They can significantly enhance the conduction and utilization of photogenerated charge carriers of TiO2 NTs. The heterostructure was successfully fabricated through a three-step process: electrochemical anodization and wet-dipping followed by thermal polymerization. The prepared P-C3N4/TiO2 NTs exhibit enhanced light-absorption characteristics and improved charge separation and transfer ability, thus resulting in a 3-fold photocurrent (1.98 mA cm-2 at 0 V vs. Ag/AgCl) compared with that of pure TiO2 NTs (0

  6. Carbon nitride nanotube as a sensor for alkali and alkaline earth cations

    Energy Technology Data Exchange (ETDEWEB)

    Beheshtian, Javad [Department of Chemistry, Shahid Rajaee Teacher Training University, P.O. Box: 16875-163, Tehran (Iran, Islamic Republic of); Baei, Mohammad T. [Department of Chemistry, Azadshahr Branch, Islamic Azad University, Azadshahr, Golestan (Iran, Islamic Republic of); Bagheri, Zargham [Physics Group, Science Department, Islamic Azad University, Islamshahr Branch, P.O. Box: 33135-369, Islamshahr, Tehran (Iran, Islamic Republic of); Peyghan, Ali Ahmadi, E-mail: ahmadi.iau@gmail.com [Young Researchers Club, Islamic Azad University, Islamshahr Branch, Tehran (Iran, Islamic Republic of)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Adsorption of alkali and alkaline earth cations on a CN nanotube studied by DFT. Black-Right-Pointing-Pointer The alkaline cation adsorption may raise potential barrier of the electron emission. Black-Right-Pointing-Pointer The tube may act as a sensor in the presence of alkali and alkaline cations. - Abstract: Adsorption of several alkali (Li{sup +}, Na{sup +}, and K{sup +}) and alkaline earth (Be{sup 2+}, Mg{sup 2+}, and Ca{sup 2+}) cations on the surface of a zigzag (9, 0) carbon nitride nanotube has been investigated using density functional theory. It has been found that almost all of the cations prefer to be strongly chemisorbed at the center of porous site of the tube surface. The adsorption of alkaline cations much more influences the electronic properties of the tube, in comparison with the alkali ones, so that it is transformed from an intrinsic semiconductor with HOMO/LUMO energy gap of 4.02 eV to extrinsic p-type one with the gap of 0.54-1.94 eV. The alkaline cation adsorption may significantly raise potential barrier of the electron emission from the tube surface, hence impeding the field emission. It has been also concluded that the electrical sensitivity of the tube toward the cations may be in the order: Be{sup 2+} Much-Greater-Than Mg{sup 2+} Much-Greater-Than Ca{sup 2+} Much-Greater-Than Li{sup +} {approx} Na{sup +} {approx} K{sup +}.

  7. The electron-phonon relaxation time in thin superconducting titanium nitride films

    International Nuclear Information System (INIS)

    We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors

  8. Novel band gap-tunable K–Na co-doped graphitic carbon nitride prepared by molten salt method

    International Nuclear Information System (INIS)

    Graphical abstract: K and Na ions co-doped into g-C3N4 crystal lattice can tune the position of CB and VB potentials, influence the structural and optical properties, and thus improve the photocatalytic degradation and mineralization ability. - Highlights: • K, Na co-doped g-C3N4 was prepared in KCl/NaCl molten salt system. • The structural and optical properties of g-C3N4 were greatly influenced by co-doping. • The position of VB and CB can be tuned by controlling the weight ratio of eutectic salts to melamine. • Co-doped g-C3N4 showed outstanding photodegradation ability, mineralization ability, and catalytic stability. - Abstract: Novel band gap-tunable K–Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV–vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from −1.09 and +1.55 eV to −0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K–Na co-doping

  9. Novel band gap-tunable K–Na co-doped graphitic carbon nitride prepared by molten salt method

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jiannan [Institute of Eco-environmental Sciences, Liaoning Shihua University, Fushun 113001 (China); School of Environmental and Biological Engineering, Liaoning Shihua University, Fushun 113001 (China); Ma, Lin [School of Petrochemical Engineering, Liaoning Shihua University, Fushun 113001 (China); Wang, Haoying; Zhao, Yanfeng [School of Environmental and Biological Engineering, Liaoning Shihua University, Fushun 113001 (China); Zhang, Jian [School of Petrochemical Engineering, Liaoning Shihua University, Fushun 113001 (China); Hu, Shaozheng, E-mail: hushaozhenglnpu@163.com [Institute of Eco-environmental Sciences, Liaoning Shihua University, Fushun 113001 (China)

    2015-03-30

    Graphical abstract: K and Na ions co-doped into g-C{sub 3}N{sub 4} crystal lattice can tune the position of CB and VB potentials, influence the structural and optical properties, and thus improve the photocatalytic degradation and mineralization ability. - Highlights: • K, Na co-doped g-C{sub 3}N{sub 4} was prepared in KCl/NaCl molten salt system. • The structural and optical properties of g-C{sub 3}N{sub 4} were greatly influenced by co-doping. • The position of VB and CB can be tuned by controlling the weight ratio of eutectic salts to melamine. • Co-doped g-C{sub 3}N{sub 4} showed outstanding photodegradation ability, mineralization ability, and catalytic stability. - Abstract: Novel band gap-tunable K–Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N{sub 2} adsorption, Scanning electron microscope (SEM), UV–vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from −1.09 and +1.55 eV to −0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K–Na co-doping.

  10. Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

    Directory of Open Access Journals (Sweden)

    Luis A. Hernández

    2013-03-01

    Full Text Available Photoluminescence (PL studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE and a broad blue and green luminescence (BL, GL, which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

  11. Phase and disorder investigations in boron nitride thin films grown by PECVD

    International Nuclear Information System (INIS)

    Based on X-ray diffraction and infrared spectroscopy measurements, BN thin films grown by PECVD on silicon substrates have been studied with the aim of identifying the thin film phase. In a set of samples, while the infrared spectra showed characteristic bands of the hexagonal phase, X-ray diffraction patterns only displayed reflections belonging to the cubic BN phase. Therefore, structural models have been developed to explain the apparent inconsistency between the two sets of experimental data. In particular, static disorder effects--which have been introduced in the model starting from the sp2 hybridization of the ordered hexagonal phase, as suggested by the infra-red spectroscopy results--allowed a consistent interpretation of the X-ray diffraction patterns. For another set of samples, which also showed a characteristic hexagonal signal in the IR data, the XRD pattern could not be indexed with any of the BN phases. In this case, the presence of molecular and ionic phases, associated with impurities, was considered in structural modeling studies

  12. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %). PMID:27128407

  13. Highly Efficient Photocatalytic H2 Evolution from Water using Visible Light and Structure-Controlled Graphitic Carbon Nitride.

    OpenAIRE

    Martin, D. J.; Qiu, K.; Shevlin, S. A.; Handoko, A. D.; Chen, X.; Guo, Z.; Tang, J.

    2014-01-01

    The major challenge of photocatalytic water splitting, the prototypical reaction for the direct production of hydrogen by using solar energy, is to develop low-cost yet highly efficient and stable semiconductor photocatalysts. Herein, an effective strategy for synthesizing extremely active graphitic carbon nitride (g-C3 N4 ) from a low-cost precursor, urea, is reported. The g-C3 N4 exhibits an extraordinary hydrogen-evolution rate (ca. 20 000 μmol h(-1)  g(-1) under full arc), which leads to ...

  14. Sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride photocatalyst: insights from first principles

    OpenAIRE

    Stolbov, Sergey; Zuluaga, Sebastian

    2012-01-01

    We present here results of our first principles studies of the sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride (g-C3N4). Using the Ab initio thermodynamics approach combined with some kinetic analysis, we reveal the favorable S-doping configurations By analyzing the valence charge densities of the doped and un-doped systems, we find that sulfur partially donates its px- and py- electrons to the system with some back donation to the S pz-states. To ...

  15. Preparation of Poly(p-phenylene sulfi de)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

    Institute of Scientific and Technical Information of China (English)

    WU Jieli; WANG Jinwen; CHEN Feng

    2015-01-01

    The present work enhanced the thermal conductivity of poly(p-phenylene sulfi de)/expanded graphites and poly(p-phenylene sulfi de)/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbonfi llers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

  16. Correlation between iron self-diffusion and thermal stability in doped iron nitride thin films

    International Nuclear Information System (INIS)

    Nanocrystalline Fe-X-N thin films (with doping X = 0, 3.1 at. % Al, 1.6 at. % Zr), were deposited using reactive ion beam sputtering. Magnetization study reveals that the deposited films exhibit a perpendicular magnetic anisotropy. Thermal stability of the films was investigated systematically and it was observed that the structural and the magnetic stability gets significantly enhanced with Al doping, whereas Zr doping has only a marginal effect. Fe self-diffusion, obtained using polarized neutron reflectivity, shows a suppression with both additives. A correlation between the thermal stability and the diffusion process gives a direct evidence that the enhancement in the thermal stability is primarily diffusion controlled. A combined picture of diffusion, structural, and magnetic stability has been drawn to understand the obtained results

  17. Facile One-Step Synthesis of Hybrid Graphitic Carbon Nitride and Carbon Composites as High-Performance Catalysts for CO2 Photocatalytic Conversion.

    Science.gov (United States)

    Wang, Yangang; Bai, Xia; Qin, Hengfei; Wang, Fei; Li, Yaguang; Li, Xi; Kang, Shifei; Zuo, Yuanhui; Cui, Lifeng

    2016-07-13

    Utilizing and reducing carbon dioxide is a key target in the fight against global warming. The photocatalytic performance of bulk graphitic carbon nitride (g-C3N4) is usually limited by its low surface area and rapid charge carrier recombination. To develop g-C3N4 more suitable for photocatalysis, researchers have to enlarge its surface area and accelerate the charge carrier separation. In this work, novel hybrid graphitic carbon nitride and carbon (H-g-C3N4/C) composites with various carbon contents have been developed for the first time by a facile one-step pyrolysis method using melamine and natural soybean oil as precursors. The effect of carbon content on the structure of H-g-C3N4/C composites and the catalytic activity for the photoreduction of CO2 with H2O were investigated. The results indicated that the introduction of carbon component can effectively improve the textural properties and electronic conductivity of the composites, which exhibited imporved photocatalytic activity for the reduction of CO2 with H2O in comparison with bulk g-C3N4. The highest CO and CH4 yield of 22.60 μmol/g-cat. and 12.5 μmol/g-cat., respectively, were acquired on the H-g-C3N4/C-6 catalyst with the carbon content of 3.77 wt % under 9 h simulated solar irradiation, which were more than twice as high as that of bulk g-C3N4. The remarkably increased photocatalytic performance arises from the synergistic effect of hybrid carbon and g-C3N4. PMID:27112547

  18. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    International Nuclear Information System (INIS)

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N2 plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti1-xZrxN and Ti1-yTayN solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti1-yTayN films exhibited superior mechanical properties to Ti1-xZrxN films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity ρ∼65 μΩ cm being obtained for pure ZrN, while for Ti1-yTayN films a minimum was observed at y∼0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  19. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    Energy Technology Data Exchange (ETDEWEB)

    Abadias, G.; Koutsokeras, L. E.; Dub, S. N.; Tolmachova, G. N.; Debelle, A.; Sauvage, T.; Villechaise, P. [Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil (France); Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil, France and Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110 (Greece); Institute for Superhard Materials, NAS of Ukraine, Avtozavodskaya St. 2, 04074 Kiev (Ukraine); Kharkov Institute of Physics and Technology, Akademicheskaya St., 61108 Kharkov (Ukraine); Universite Paris-Sud 11, CSNSM, Ba circumflex t 108, 91405 Orsay Cedex (France); CNRS-CEMHTI, Site Cyclotron, 3A, rue de la Ferollerie, 45071 Orleans Cedex 2 (France); Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil (France)

    2010-07-15

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  20. Nanomechanical characterization of amorphous hydrogenated carbon thin films

    International Nuclear Information System (INIS)

    Amorphous hydrogenated carbon (a-C:H) thin films deposited on a silicon substrate under various mixtures of methane-hydrogen gas by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MPCVD) was investigated. Microstructure, surface morphology and mechanical characterizations of the a-C:H films were analyzed using Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation technique, respectively. The results indicated there was an increase of the hydrogen content, the ratio of the D-peak to the G-peak (I D/I G) increased but the surface roughness of the films was reduced. Both hardness and Young's modulus increased as the hydrogen content was increased. In addition, the contact stress-strain analysis is reported. The results confirmed that the mechanical properties of the amorphous hydrogenated carbon thin films improved using a higher H2 content in the source gas

  1. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Greczynski, Grzegorz, E-mail: grzgr@ifm.liu.se; Hultman, Lars [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Petrov, Ivan [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping, Sweden and Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Greene, J. E. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801(United States); Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)

    2015-09-15

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions

  2. Spin-polarized neutron reflectometry investigation of rare-earth nitride thin films: DyN, HoN and ErN

    International Nuclear Information System (INIS)

    Ferromagnetic semiconductors are expected to play a key role in future spintronics devices because they offer a rich set of functionality arising from the interplay of free electron-concentration and magnetism. However, candidate ferromagnetic semiconductors for wide-spread application are scarce. This has motivated the search for ferromagnetic semiconductors in a wide range of material families, for example the metal-nitrides and the dilute magnetic oxides. The existence of a true ferromagnetic semiconductor in these new families remains controversial Advanced experimental techniques are crucial to understand the interplay of chemistry, magnetism and finite-size effects that occur in nanoscale thin films containing these compounds. The spin-polarized option at the neutron reflectometer, Platypus, recently became operational at the OPAL research reactor, Lucas Heights. This powerful technique enables a determination of the depth dependency of the magnetization vector within a thin film structure with sub-nm resolution. In this work, we present recent experimental results from the study of the heavy rare-earth nitride thin films: ErN, HoN and DyN.

  3. Structural investigations of local non-homogeneities in thermally treated nitrided layers in carbon steels

    International Nuclear Information System (INIS)

    In order to improve steel performance in some applications the nitrided layers in steel may be subjected to additional heat treatment. One of the forms of such treatment is the incorporate quench hardening from the diphase α-γ area on the Fe-C diagram. This treatment results in secondary diffusion of nitrogen into the base metal, decompose of the surface nitride layer and an increase in the thickness of the hardened layer. An incomplete α-γ transition creates zones of varied bainite-martensite structures with varying nitrogen concentration and hardness. (author)

  4. A Fabrication Route for Arrays of Ultra-low-Noise MoAu Transition Edge Sensors on Thin Silicon Nitride for Space Applications

    OpenAIRE

    Glowacka, D. M.; Crane, M.; Goldie, D. J.; Withington, S.

    2014-01-01

    We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form long-thin legs with widths of 2.1 {\\mu}m. Using bilayers formed on SiNx islands from films with 40 nm-thick Mo and Au thicknesses in the range 30 to 280 nm deposited by dc-sputtering in ultra-high vacuum we can obtain tunable transition temperatures in the ran...

  5. Direct electrochemistry of cytochrome c immobilized on titanium nitride/multi-walled carbon nanotube composite for amperometric nitrite biosensor.

    Science.gov (United States)

    Haldorai, Yuvaraj; Hwang, Seung-Kyu; Gopalan, Anantha-Iyengar; Huh, Yun Suk; Han, Young-Kyu; Voit, Walter; Sai-Anand, Gopalan; Lee, Kwang-Pill

    2016-05-15

    In this report, titanium nitride (TiN) nanoparticles decorated multi-walled carbon nanotube (MWCNTs) nanocomposite is fabricated via a two-step process. These two steps involve the decoration of titanium dioxide nanoparticles onto the MWCNTs surface and a subsequent thermal nitridation. Transmission electron microscopy shows that TiN nanoparticles with a mean diameter of ≤ 20 nm are homogeneously dispersed onto the MWCNTs surface. Direct electrochemistry and electrocatalysis of cytochrome c immobilized on the MWCNTs-TiN composite modified on a glassy carbon electrode for nitrite sensing are investigated. Under optimum conditions, the current response is linear to its concentration from 1 µM to 2000 µM with a sensitivity of 121.5 µA µM(-1)cm(-2) and a low detection limit of 0.0014 µM. The proposed electrode shows good reproducibility and long-term stability. The applicability of the as-prepared biosensor is validated by the successful detection of nitrite in tap and sea water samples. PMID:26748372

  6. Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

    International Nuclear Information System (INIS)

    Highlights: • NbN films were deposited on Nb by pulsed laser deposition in nitrogen background. • We studied structural/mechanical properties by XRD, SEM, AFM, and nanoindentation. • The hardness increased from 14.0 to 18.9 GPa for laser fluence 15–25 J/cm2 at 10.7 Pa. • The hardness showed no correlation with laser fluence at high background pressure. • Increasing the laser fluence resulted in NbNx films with larger grain sizes. - Abstract: Nanomechanical and structural properties of NbNx films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbNx films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbNx films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbNx film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm2 at 10.7 Pa N2 pressure. X-ray diffraction showed NbNx films with peaks that correspond to δ-NbN cubic and β-Nb2N hexagonal phases in addition to the δ′-NbN hexagonal phase. Increasing the laser fluence resulted in NbNx films with larger grain sizes

  7. Dendritic Tip-on Polytriazine-Based Carbon Nitride Photocatalyst with High Hydrogen Evolution Activity

    KAUST Repository

    Bhunia, Manas Kumar

    2015-11-23

    Developing stable, ubiquitous and efficient water-splitting photocatalyst material that has extensive absorption in the visible-light range is desired for a sustainable solar energy-conversion device. We herein report a triazine-based carbon nitride (CN) material with different C/N ratios achieved by varying the monomer composition ratio between melamine (Mel) and 2,4,6-triaminopyrimidine (TAP). The CN material with a different C/N ratio was obtained through a two-step synthesis protocol: starting with the solution state dispersion of the monomers via hydrogen-bonding supramolecular aggregate, followed by a salt-melt high temperature polycondensation. This protocol ensures the production of a highly crystalline polytriazine imide (PTI) structure con-sisting of a copolymerized Mel-TAP network. The observed bandgap narrowing with an increasing TAP/Mel ratio is well simulated by density functional theory (DFT) calculations, revealing a positive shift in the valence band upon substitution of N with CH in the aromatic rings. Increasing the TAP amount could not maintain the crystalline PTI structure, consistent with DFT calculation showing the repulsion associated with additional C-H introduced in the aromatic rings. Due to the high exciton binding energy calculated by DFT for the obtained CN, the cocatalyst must be close to any portion of the material to assist the separation of excit-ed charge carriers for an improved photocatalytic performance. The photocatalytic activity was improved by providing a dendritic tip-on-like shape grown on a porous fibrous silica KCC-1 spheres, and highly dispersed Pt nanoparticles (<5 nm) were photodepos-ited to introduce heterojunction. As a result, the Pt/CN/KCC-1 photocatalyst exhibited an apparent quantum efficiency (AQE) as high as 22.1 ± 3% at 400 nm and the silica was also beneficial for improving photocatalytic stability. The results obtained by time-resolved transient absorption spectroscopy measurements were consistent with

  8. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Yap, Yoke Khin

    2013-03-14

    Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy's Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los

  9. Designing nanoscale constructs from atomic thin sheets of graphene, boron nitride and gold nanoparticles for advanced material applications

    Science.gov (United States)

    Jasuja, Kabeer

    2011-12-01

    Nanoscale materials invite immense interest from diverse scientific disciplines as these provide access to precisely understand the physical world at their most fundamental atomic level. In concert with this aim of enhancing our understanding of the fundamental behavior at nanoscale, this dissertation presents research on three nanomaterials: Gold nanoparticles (GNPs), Graphene and ultra-thin Boron Nitride sheets (UTBNSs). The three-fold goals which drive this research are: incorporating mobility in nanoparticle based single-electron junction constructs, developing effective strategies to functionalize graphene with nano-forms of metal, and exfoliating ultrathin sheets of Boron Nitride. Gold nanoparticle based electronic constructs can achieve a new degree of operational freedom if nanoscale mobility is incorporated in their design. We achieved such a nano-electromechanical construct by incorporating elastic polymer molecules between GNPs to form 2-dimensional (2-D) molecular junctions which show a nanoscale reversible motion on applying macro scale forces. This GNP-polymer assembly works like a molecular spring opening avenues to maneuver nano components and store energy at nano-scale. Graphene is the first isolated nanomaterial that displays single-atom thickness. It exhibits quantum confinement that enables it to possess a unique combination of fascinating electronic, optical, and mechanical properties. Modifying the surface of graphene is extremely significant to enable its incorporation into applications of interest. We demonstrated the ability of chemically modified graphene sheets to act as GNP stabilizing templates in solution, and utilized this to process GNP composites of graphene. We discovered that GNPs synthesized by chemical or microwave reduction stabilize on graphene-oxide sheets to form snow-flake morphologies and bare-surfaces respectively. These hybrid nano constructs were extensively studied to understand the effect and nature of GNPs

  10. Influence of cubic boron nitride grinding on the fatigue strengths of carbon steels and a nickel-base superalloy

    Energy Technology Data Exchange (ETDEWEB)

    Kawagoishi, N.; Chen, Q.; Kondo, E. [Kagoshima Univ. (Japan). Faculty of Engineering; Goto, M. [Oita Univ. (Japan). Faculty of Engineering; Nisitani, H. [Kyushu Sangyo Univ., Fukuoka (Japan). Faculty of Engineering

    1999-04-01

    The influence of cubic boron nitride (CBN) grinding on fatigue strength was investigated on an annealed carbon steel, a quenched and tempered carbon steel at room temperature, and a nickel-base superalloy, Inconel 718, at room temperature and 500 C. The results were discussed from several viewpoints, including surface roughness, residual stress, and work hardening or softening due to CBN grinding. The fatigue strength increased upon CBN grinding at room temperature, primarily because of the generation of compressive residual stress in the surface region. However, in the case of Inconel 718, this marked increase in the fatigue strength tended to disappear at the elevated temperature due to the release of compressive residual stress and the decrease of crack growth resistance at an elevated temperature.

  11. The Effect of Mesoporous Carbon Nitride Modification by Titanium Oxide Nanoparticles on Photocatalytic Degradation of 1,3-Dinitrobenzene

    Directory of Open Access Journals (Sweden)

    Seyyed Ershad Moradi

    2015-11-01

    Full Text Available In the present work, well ordered, mesoporous carbon nitride (MCN sorbent with uniform mesoporous wall, high surface area and pore volume has been fabricated using the simple polymerization reaction between ethylene diamine and carbon tetrachloride in mesoporous silica media, and then modified by TiO2 nanoparticles (Ti-MCN. The structural order and textural properties of the nanoporous materials were studied by XRD, elemental analysis, and nitrogen adsorption–desorption experiments. Photodegradation experiments for 1,3-dinitrobenzene were conducted in batch mode, the Ti-MCN catalysts were found to be more active compared to the free TiO2 nanoparticles for 1,3-dinitrobenzene degradation.

  12. Hydorgen sputtering of carbon thin films deposited on platinum

    International Nuclear Information System (INIS)

    Carbon has been suggested as a suitable low Z element for the lining of the first walls of controlled thermonuclear reactors in order to reduce radiative plasma losses due to sputtering. In this paper the measurement of sputtering of carbon thin films by protons in the energy range 0.6-10.0 keV, is described. H2+ or H3+ ions were used as bombarding ions to obtain equivalent H+ sputtering yields at energies below that at which the ion source provides sufficient proton current. The sputter yield was found to range from 7x10-3-1.5x10-2 atoms/proton with a broad maximum in the 2.0 keV region with the carbon film kept near ambient temperature. (B.D.)

  13. Does hydrogen change the fullerenelike structure in CNx thin films?

    International Nuclear Information System (INIS)

    The authors have reported the structure of the nanoclusters in carbon nitride thin films before [D. Roy et al., Phys. Rev. B 70, 035406 (2004)]. In this work, effects of the addition of hydrogen in the deposition gas mixture on the structures of carbon nitride thin films prepared by magnetron sputtering were investigated using Raman spectroscopy. Raman measurements showed that the structures of carbon nanoclusters remained unaffected by the addition of hydrogen in the carbon nitride films. On the other hand, the structures of amorphous thin films were affected by the addition of hydrogen in the deposition gas mixture. These are explained in terms of changes in the ratios of the D-peak to the G-peak intensities and shifts in the G-peak centers.

  14. Synthesis and Characterization of Magnetite/Carbon Nanocomposite Thin Films for Electrochemical Applications

    Institute of Scientific and Technical Information of China (English)

    Suh Cem Pang; Wai Hwa Khoh; Suk Fun Chin

    2011-01-01

    Stable colloidal suspension of magnetite/starch nanocomposite was prepared by a facile and aqueous-based chemical precipitation method, Magnetite/carbon nanocomposite thin films were subsequently formed upon carbonization of the starch component by heat treatment under controlled conditions. The initial content of native sago starch as the carbon source was found to affect the microstructure and electrochemical properties of the resulted magnetite/carbon nanocomposite thin films, A specific capacitance of 124 F/g was achieved for the magnetite/carbon nanocomposite thin films as compared to that of 82 F/g for pure magnetite thin films in Na2SO4 aqueous electrolyte.

  15. Applications of thin carbon coatings and films in injection molding

    Science.gov (United States)

    Cabrera, Eusebio Duarte

    In this research, the technical feasibility of two novel applications of thin carbon coatings is demonstrated. The first application consists of using thin carbon coatings on molds for molding ultra-thin plastic parts (EMI) shielding for plastic parts using in mold coated nanoparticle thin films or nanopapers to create a conductive top layer. During this research, the technical feasibility of a new approach was proven which provides injection molding of ultra-thin parts at lower pressures, without the need of fast heating/fast cooling or other expensive mold modification. An in-house developed procedure by other members of our group, was employed for coating the mold surface using chemical vapor deposition (CVD) resulting in a graphene coating with carbide bonding to the mold surface. The coating resulted in a significant decrease of surface friction and consequently easiness of flow when compared to their uncoated counterparts. Thermoplastic polymers and their composites are a very attractive alternative but are hindered by the non-conductive nature of polymers. There are two general approaches used to date to achieve EMI shielding for plastic products. One is to spray a conductive metal coating onto the plastic surface forming a layer that must maintain its shielding effectiveness (SE), and its adhesion to the plastic throughout the expected life of the product. However, metal coatings add undesirable weight and tend to corrode over time. Furthermore, scratching the coating may create shielding failure; therefore, a protective topcoat may be required. The other approach is to use polymer composites filled with conductive fillers such as carbon black (CB), carbon nanofiber (CNF), and carbon nanotube (CNT). While conductive fillers may increase the electrical conductivity of polymer composites, the loading of such fillers often cannot reach a high level (EMI shielding of plastic parts was proven using in mold coated nanoparticle thin films or nanopapers to create a

  16. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

    International Nuclear Information System (INIS)

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N2O ambient (10–100%) at 500 °C for 15 min to form Zr-oxynitride on 4H–SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N2O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr–O–N and/or Zr–N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: ► Zr-oxynitride as the gate oxide deposited on 4H–SiC substrate. ► Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H–SiC using various concentrations of N2O gas. ► Presence of interfacial layer comprised of mixed compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N. ► The highest electrical breakdown and highest reliability at diluted N2O of 10%.

  17. A Fabrication Route for Arrays of Ultra-low-Noise MoAu Transition Edge Sensors on Thin Silicon Nitride for Space Applications

    CERN Document Server

    Glowacka, D M; Goldie, D J; Withington, S

    2014-01-01

    We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form long-thin legs with widths of 2.1 {\\mu}m. Using bilayers formed on SiNx islands from films with 40 nm-thick Mo and Au thicknesses in the range 30 to 280 nm deposited by dc-sputtering in ultra-high vacuum we can obtain tunable transition temperatures in the range 700 to 70 mK. The sensors use large-area absorbers fabricated from high resistivity, thin-film beta-phase Ta to provide impedance-matching to incident radiation. The absorbers are patterned to reduce the heat capacity associated with the nitride support structure and include Au thermalizing features to assist the heat flow into the TES. Arrays of 400 detectors at the pixel spacing required for the long-wavelength band of the far-infrared instrument SAFARI are now being fabricated. Device yields approaching 99% are achi...

  18. Layer by layer assembly of catalase and amine-terminated ionic liquid onto titanium nitride nanoparticles modified glassy carbon electrode: Study of direct voltammetry and bioelectrocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Saadati, Shagayegh [Department of Chemistry, University of Kurdistan, P.O. Box 416, Sanandaj (Iran, Islamic Republic of); Salimi, Abdollah, E-mail: absalimi@uok.ac.ir [Department of Chemistry, University of Kurdistan, P.O. Box 416, Sanandaj (Iran, Islamic Republic of); Research Center for Nanotechnology, University of Kurdistan, P.O. Box 416, Sanandaj (Iran, Islamic Republic of); Hallaj, Rahman; Rostami, Amin [Department of Chemistry, University of Kurdistan, P.O. Box 416, Sanandaj (Iran, Islamic Republic of)

    2012-11-13

    Highlights: Black-Right-Pointing-Pointer Catalase and amine-terminated ionic liquid were immobilized to GC/TiNnp with LBL assembly method. Black-Right-Pointing-Pointer First a thin layer of NH{sub 2}-IL is covalently attached to GC/TiNnp electrode using electro-oxidation. Black-Right-Pointing-Pointer With alternative assemble of IL and catalase with positive and negative charged, multilayer was formed. Black-Right-Pointing-Pointer Immobilized catalase shows excellent electrocatalytic activity toward H{sub 2}O{sub 2} reduction. Black-Right-Pointing-Pointer Biosensor response is directly correlated to the number of bilayers. - Abstract: A novel, simple and facile layer by layer (LBL) approach is used for modification of glassy carbon (GC) electrode with multilayer of catalase and nanocomposite containing 1-(3-Aminopropyl)-3-methylimidazolium bromide (amine terminated ionic liquid (NH{sub 2}-IL)) and titanium nitride nanoparticles (TiNnp). First a thin layer of NH{sub 2}-IL is covalently attached to GC/TiNnp electrode using electro-oxidation method. Then, with alternative self assemble positively charged NH{sub 2}-IL and negatively charged catalase a sensitive H{sub 2}O{sub 2} biosensor is constructed, whose response is directly correlated to the number of bilayers. The surface coverage of active catalase per bilayer, heterogeneous electron transfer rate constant (k{sub s}) and Michaelis-Menten constant (K{sub M}) of immobilized catalase were 3.32 Multiplication-Sign 10{sup -12} mol cm{sup -2}, 5.28 s{sup -1} and 1.1 mM, respectively. The biosensor shows good stability, high reproducibility, long life-time, and fast amperometric response with the high sensitivity of 380 {mu}A mM{sup -1} cm{sup -2} and low detection limit of 100 nM at concentration range up to 2.1 mM.

  19. Printable Thin Film Supercapacitors Using Single-Walled Carbon Nanotubes

    KAUST Repository

    Kaempgen, Martti

    2009-05-13

    Thin film supercapacitors were fabricated using printable materials to make flexible devices on plastic. The active electrodes were made from sprayed networks of single-walled carbon nanotubes (SWCNTs) serving as both electrodes and charge collectors. Using a printable aqueous gel electrolyte as well as an organic liquid electrolyte, the performances of the devices show very high energy and power densities (6 W h/kg for both electrolytes and 23 and 70 kW/kg for aqueous gel electrolyte and organic electrolyte, respectively) which is comparable to performance in other SWCNT-based supercapacitor devices fabricated using different methods. The results underline the potential of printable thin film supercapacitors. The simplified architecture and the sole use of printable materials may lead to a new class of entirely printable charge storage devices allowing for full integration with the emerging field of printed electronics. © 2009 American Chemical Society.

  20. Effect of aluminium nitride precipitation on recrystallisation kinetic in low carbon batch

    International Nuclear Information System (INIS)

    An important feature of aluminium killed steels is the strong influence that aluminium nitride precipitates produce in both the mechanical properties and the final micro-structural characteristics of the steel. This influence is related to the different stages of the fabrication process. This paper de las with a study of the effects of aluminium nitrides on the kinetics of recrystallisation. Different heat treatments were carried out, in one case to dissolve AIN, and in the other in order to precipitate AIN. These steels were subjected to cold rolling, followed by a batch annealing process. The recrystallised fraction was measured, thus obtaining the kinetic curves. The activation energy for recrystallisation was computed in each case. The results showed that AIN precipitation during recrystallisation produces a delay in recrystallisation kinetics through a change in the activation energy value. (Author) 29 refs

  1. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    Energy Technology Data Exchange (ETDEWEB)

    Jia Zhengfeng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); College of Materials Science and Engineering, Liaocheng University, Liaocheng 252059 (China); Graduate School of the Chinese Academy of Sciences, Beijing 10039 (China); Wang Peng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); Xia Yanqiu, E-mail: xiayanqiu@yahoo.com [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); Zhang Haobo; Pang Xianjuan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 10039 (China); Li Bin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China)

    2009-04-15

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS{sub 2} tribofilm, and decrease coefficient of friction of rubbing pairs.

  2. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    Science.gov (United States)

    Jia, Zheng-feng; Wang, Peng; Xia, Yan-qiu; Zhang, Hao-bo; Pang, Xian-juan; Li, Bin

    2009-04-01

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS 2 tribofilm, and decrease coefficient of friction of rubbing pairs.

  3. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    International Nuclear Information System (INIS)

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS2 tribofilm, and decrease coefficient of friction of rubbing pairs.

  4. A MEMS Thin Film AlN Supercritical Carbon Dioxide Valve

    OpenAIRE

    Chen, Ya-Mei

    2011-01-01

    In this thesis, a new piezoelectric valve system with bi-chevron aluminum nitride (AlN) actuator is described. The intended application of the new piezoelectric valve is for the advanced printing technology with supercritical carbon dioxide as the solvent. With supercritical carbon dioxide as the solvent, the ink dissolved will start to nucleate with a micronozzle and generate extremely small and uniform ink particles due to rapid expansion of supercritical solution (RESS). Therefore, the res...

  5. The function-led design of Z-scheme photocatalytic systems based on hollow carbon nitride semiconductors.

    Science.gov (United States)

    Zheng, Dandan; Pang, Chenyang; Wang, Xinchen

    2015-12-21

    A ternary photocatalyst has been successfully constructed through the integration of Au, CdS and hollow carbon nitride nanospheres (HCNS), where Au nanoparticles were designed to shuttle interparticle transfer of charge carriers between CdS and HCNS photosensitizers to establish two-photon (Z-scheme) photocatalytic tandem systems for solar fuel production. The solid-state CdS-Au-HCNS Z-scheme nanocomposites were efficient for H2 evolution (with a quantum yield of 8.7% at 420 nm) and CO2 reduction catalysis with visible light irradiation. This work further proves the feasibility of employing hollow conjugated polymer photocatalysts in the function-led design of artificial Z-type photosynthetic machinery on soft material interfaces. PMID:26473176

  6. Facile synthesis of nanorod-type graphitic carbon nitride/Fe2O3 composite with enhanced photocatalytic performance

    Science.gov (United States)

    Wang, Jiangpeng; Li, Changqing; Cong, Jingkun; Liu, Ziwei; Zhang, Hanzhuo; Liang, Mei; Gao, Junkuo; Wang, Shunli; Yao, Juming

    2016-06-01

    Here we report a facile synthesis of nanorod-type graphitic carbon nitride/Fe2O3 composite (Fe2O3-g-C3N4) by using Fe-melamine supramolecular framework as precursor. The chemical and optical properties of the nanocomposites are well-characterized. The Fe2O3-g-C3N4 nanocomposite demonstrated excellent photocatalytic activities under visible light due to the efficient utilization of sunlight and the construction of Z-scheme electron transfer pathway. The results indicated that it could be a promising approach for the preparation of efficient g-C3N4 nanocomposites photocatalysts by using metal-melamine supramolecular framework as precursors.

  7. Highly selective hydrogenation of phenol and derivatives over a Pd@carbon nitride catalyst in aqueous media.

    Science.gov (United States)

    Wang, Yong; Yao, Jia; Li, Haoran; Su, Dangsheng; Antonietti, Markus

    2011-03-01

    Cyclohexanone is an important intermediate in the manufacture of polyamides in chemical industry, but direct selective hydrogenation of phenol to cyclohexanone under mild conditions is a challenge. We report here a catalyst made of Pd nanoparticles supported on a mesoporous graphitic carbon nitride, Pd@mpg-C(3)N(4), which was shown to be highly active and promoted the selective formation of cyclohexanone under atmospheric pressure of hydrogen in aqueous media without additives. Conversion of 99% and a selectivity higher than 99% were achieved within 2 h at 65 °C. The reaction can be accelerated at higher temperature, but even at room temperature, 99% conversion and 96% selectivity could still be obtained. The generality of the Pd@mpg-C(3)N(4) catalyst for this reaction was demonstrated by selective hydrogenation of other hydroxylated aromatic compounds with similar performance. PMID:21294506

  8. Unique Static Magnetic and Dynamic Electromagnetic Behaviors in Titanium Nitride/Carbon Composites Driven by Defect Engineering

    Science.gov (United States)

    Gong, Chunhong; Meng, Hongjie; Zhao, Xiaowei; Zhang, Xuefeng; Yu, Laigui; Zhang, Jingwei; Zhang, Zhijun

    2016-01-01

    Recently, the defect-induced static magnetic behaviours of nanomaterials have been a cutting-edge issue in diluted magnetic semiconductor materials. However, the dynamic magnetic properties of nanomaterials are commonly ignored if their bulk counterparts are non-magnetic. In the present research, titanium nitride-carbon (TiN/C) nanocomposites were found to exhibit both static and dynamic magnetic properties that vary in the opposite trend. Moreover, novel unconventional electromagnetic resonance behaviour was demonstrated in TiN/C systems, and their permeability and permittivity show similar trend. This is challenging for the traditional understanding of electromagnetism and makes it possible to achieve an appropriate balance between the permeability and permittivity simultaneously in a simple system. Hopefully, the results could provide some valuable clues to revealing the magnetism and electromagnetism of nanostructures. PMID:26739853

  9. Photosensitization of Carbon Nitride Photoelectrodes with CdS: A Novel Architecture with Highly Efficient Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Xiaosong Zhou

    2014-01-01

    Full Text Available CdS with well-defined crystallinity is anchored on carbon nitride photoelectrodes by a successive chemical bath deposition. And the as-synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, ultraviolet-visible diffuse reflection spectroscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy techniques. The effect of the amount of CdS on the catalytic activity for the degradation of acid Orange II is investigated under visible light irradiation. Results show that the photoelectrodes composed of CdS/CN exhibit much higher catalytic activity than pure CN photoelectrodes. A possible photocatalytic mechanism of the CdS/CN electrodes is proposed under visible light irradiation.

  10. Phase formation and microstructure of boron nitride thin layers deposited using Nd:YAG and KrF

    Czech Academy of Sciences Publication Activity Database

    Mroz, W.; Kosydar, R.; Jelínek, Miroslav; Kocourek, Tomáš; Major, B.

    2006-01-01

    Roč. 200, - (2006), s. 6438-6443. ISSN 0257-8972 Grant ostatní: Polish Ministry of Science and Informatization(PL) PBZ-KBN-100/T08/2003 Institutional research plan: CEZ:AV0Z10100522 Keywords : boron nitride * pulsed laser deposition * coating Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.559, year: 2006

  11. Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of − 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)–N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar–N2 mixed gas. The effect of the addition time of the hydrogen to the Ar–N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained. - Highlights: • A nanocrystalline diamond (NCD) buffer layer was applied to enhance the adhesion. • Hydrogen in the reaction gas caused delamination of the film at c-BN/NCD interface. • A delayed hydrogen addition was effective in inhibiting such delamination. • About 3 μm thick c-BN film could be grown

  12. Ultrasonic Fatigue Endurance of Thin Carbon Fiber Sheets

    Science.gov (United States)

    Domínguez Almaraz, Gonzalo M.; Ruiz Vilchez, Julio A.; Dominguez, Aymeric; Meyer, Yann

    2016-04-01

    Ultrasonic fatigue tests were carried out on thin carbon fiber sheets (0.3 mm of thickness) to determine the fatigue endurance under very high-frequency loading (20 kHz). This material, called the gas diffusion layer (GDL), plays a major role in the overall performances of proton exchange membrane fuel cells (PEMFCs). The study of its physical-chemical properties is an on-going subject in the literature; nevertheless, no knowledge is available concerning the high-frequency fatigue endurance. A principal difficulty in carrying out ultrasonic fatigue tests on this material was to determine the dimensions of testing specimen to fit the resonance condition. This aspect was solved by modal numerical simulation: The testing specimen has been a combination of a low-strength steel frame (to facilitate the attachment to the ultrasonic machine and to increase the mass of the specimen), and the carbon fiber hourglass-shape profile. Under resonance condition, a stationary elastic wave is generated along the specimen that induces high stress at the neck section and high displacements at the ends. Results show that fatigue life was close to 3 × 108 cycles when the high Von Misses stress at the neck section was 170 MPa, whereas fatigue life attains the 4.5 × 109 cycles when stress decreases to 117 MPa. Crack initiation and propagation were analyzed, and conclusions were drawn concerning the fatigue endurance of these fiber carbon sheets under ultrasonic fatigue testing.

  13. Residual stresses and mechanical properties of amorphous carbon films on 40 CAD 6-12 plasma nitrided steel

    International Nuclear Information System (INIS)

    Full text.An investigation has been carried out to study the effect of deposition time and benzene flow rate on residual stresses level, morphological, hardness, adhesion strength and friction coefficient of carbon films. Amorphous hydrogenated carbon a-c:H films were deposited on plasma nitrided layers (ε+γ') of 40 CAD 6-12 steel substrate using Microwave Electron Cyclotron Resonance Plasma Assisted Chemical Vapour Deposition nethod with benzene/Argon gas as precursor. The coatings have been deposited at different temperatures 350 and 520 degree celsius for times 3,5,60 and 120 minutes under different pressures ranging from 10-3 to 10-5 mbar. A wide range of thickness values of the amorphous carbon layers (0.4 up 15 μm) was formed as function of the deposition conditions and precursors, when the bias voltage (-200V) and microwave power (300 W) were kept constant. Stress behavior in carbon films has been investigated by x-ray diffraction measurement using the sin2Ψ technique. The type and the value of stress have shown a strong dependence of film thickness and the benzene flow rate (σ= -259 ÷ 5 MPa). Scratch tests revealed that they possess excellent adhesion strength and exhibit both low values of friction coefficient and roughness. The has been concluded than the micro hardness measurements results are not influenced by the coating thickness. The hardness of the coatings is normally below 30 GPa for coatings with 7 sccm of benzene flow rate. The carbon films were characterized by SEM and Raman spectroscopy

  14. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    Science.gov (United States)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  15. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    International Nuclear Information System (INIS)

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH3/SiH4 ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH3/SiH4 ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects

  16. INFLUENCE OF EXCITATION FREQUENCY ON ORIENTED (10(-1)0) GROWTH OF ALUMINIUM NITRIDE THIN FILMS BY PECVD

    OpenAIRE

    Azema, N.; Durand, J.; Berjoan, R.; Balladore, J.; Cot, L.

    1991-01-01

    The Metal-Organic Chemical Vapor Deposition process assisted by reactive plasma, leads to AlN coatings with oriented (10[MATH]0) structure. The Aluminium nitride was synthesized on a wide range of substrates (Silicon (100) or (111) wafers, graphite, polycrystalline Silicon Carbide and glass plates) from trimethylaluminium and ammonia at 330°C. The a-axis orientation of AlN coatings, which does not depend on the substrate, changes with the excitation frequency. Material crystallinity and eleme...

  17. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

    2015-04-30

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

  18. Generation of mirage effect by heated carbon nanotube thin film

    Energy Technology Data Exchange (ETDEWEB)

    Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

    2014-06-28

    Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

  19. Generation of mirage effect by heated carbon nanotube thin film

    Science.gov (United States)

    Tong, L. H.; Lim, C. W.; Li, Y. C.; Zhang, Chuanzeng; Quoc Bui, Tinh

    2014-06-01

    Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

  20. Generation of mirage effect by heated carbon nanotube thin film

    International Nuclear Information System (INIS)

    Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

  1. Aligned Carbon Nanotube Thin Films from Liquid Crystal Polyelectrolyte Inks.

    Science.gov (United States)

    Tune, Daniel D; Blanch, Adam J; Shearer, Cameron J; Moore, Katherine E; Pfohl, Moritz; Shapter, Joseph G; Flavel, Benjamin S

    2015-11-25

    Single walled carbon nanotube thin films are fabricated by solution shearing from high concentration sodium nanotubide polyelectrolyte inks. The solutions are produced by simple stirring of the nanotubes with elemental sodium in dimethylacetamide, and the nanotubes are thus not subject to any sonication-induced damage. At such elevated concentrations (∼4 mg mL(-1)), the solutions exist in the liquid crystal phase and during deposition this order is transferred to the films, which are well aligned in the direction of shear with a 2D nematic order parameter of ∼0.7 determined by polarized absorption measurements. Compared to similarly formed films made from superacids, the polyelectrolyte films contain smaller bundles and a much narrower distribution of bundle diameters. After p-doping with an organic oxidizer, the films exhibit a very high DC electrical to optical conductivity ratio of σ(DC)/σ(OP) ∼ 35, corresponding to a calculated DC conductivity of over 7000 S cm(-1). When very thin (T550 ∼ 96%), smooth (RMS roughness, R(q) ∼ 2.2 nm), and highly aligned films made via this new route are used as the front electrodes of carbon nanotube-silicon solar cells, the power conversion efficiency is almost an order of magnitude greater than that obtained when using the much rougher (R(q) ∼ 20-30 nm) and less conductive (peak σ(DC)/σ(OP) ∼ 2.5) films formed by common vacuum filtration of the same starting material, and having the same transmittance. PMID:26511159

  2. Separation and concentration of natural products by fast forced adsorption using well-dispersed velvet-like graphitic carbon nitride with response surface methodology optimisation.

    Science.gov (United States)

    Ding, Xinru; Zhu, Jun; Zhang, Yue; Xia, Qian; Bi, Wentao; Yang, Xiaodi; Yang, Jinfei

    2016-07-01

    Well-dispersed velvet-like graphitic carbon nitride nanoparticles with a large surface area were prepared and utilized for separation and concentration of bioactive compounds from fruit extracts by fast (20s) forced adsorption. The large surface area, enhanced non-covalent interactions of this nanoparticle with bioactive compounds and good dispersity in different solvents benefited its application as a good sorbent. To evaluate their adsorption capabilities, these carbon nitride nanoparticles were used for separation and concentration of flavonoids from fruit extracts by a forced-adsorption dispersive solid phase extraction method. The combined use of this nanoparticle and our experimental conditions showed excellent precision (3.6-4.7%) and sensitivity (limits of detection (S/N=3): 0.6-3.75ng/mL). This research provides an alternative strategy to prepare suitable sorbents for adsorption, separation and concentration of various compounds from different extracts. PMID:27154656

  3. Influence of the power on the processes controlling the formation of ECR-CVD carbon nitride films from CH{sub 4}/Ar/N{sub 2} plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Camero, M [Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid (Spain); Gordillo-Vazquez, F J [Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Ortiz, J [Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid (Spain); Gomez-Aleixandre, C [Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid (Spain)

    2004-02-01

    Carbon nitride films have been synthesized by means of electron cyclotron resonance chemical vapour deposition (ECR-CVD) using different power values (50-212 W) at constant pressure conditions (0.03 mbar). Optical emission spectroscopy and mass spectrometry were used for the characterization of the plasma. The films were analysed using energy dispersive x-ray spectroscopies. It was found that all signal peaks in the optical emission spectra increased monotonically following the increase in microwave power. Moreover, we have observed that the radiative emission from the 4p({sup 2}p{sub 9}) resonant state of Ar is the most affected by CH{sub 4} addition to a pure argon plasma. The latter suggests that a Penning mechanism controls the activation of CH{sub 4} molecules with increasing power levels at relatively low pressures. Besides, the increase of excited N atoms indicates a higher activity of the etching mechanisms of carbon nitride films with increasing power.

  4. Nickel as a co-catalyst for photocatalytic hydrogen evolution on graphitic-carbon nitride (sg-CN): what is the nature of the active species?

    Science.gov (United States)

    Indra, Arindam; Menezes, Prashanth W; Kailasam, Kamalakannan; Hollmann, Dirk; Schröder, Marc; Thomas, Arne; Brückner, Angelika; Driess, Matthias

    2016-01-01

    The nature of a nickel-based co-catalyst deposited on a sol-gel prepared porous graphitic-carbon nitride (sg-CN), for photocatalytic H2 production from water, has been investigated. The formation of the active catalytic species, charge separation and recombination of the photogenerated electrons and holes during photochemical H2 evolution has been determined for the first time using in situ EPR spectroscopy. PMID:26498497

  5. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma

    International Nuclear Information System (INIS)

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 oC according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 1012-101'3 cm-3. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind of plasma. Diborane dissociation

  6. Single Atom (Pd/Pt) Supported on Graphitic Carbon Nitride as an Efficient Photocatalyst for Visible-Light Reduction of Carbon Dioxide.

    Science.gov (United States)

    Gao, Guoping; Jiao, Yan; Waclawik, Eric R; Du, Aijun

    2016-05-18

    Reducing carbon dioxide to hydrocarbon fuel with solar energy is significant for high-density solar energy storage and carbon balance. In this work, single atoms of palladium and platinum supported on graphitic carbon nitride (g-C3N4), i.e., Pd/g-C3N4 and Pt/g-C3N4, respectively, acting as photocatalysts for CO2 reduction were investigated by density functional theory calculations for the first time. During CO2 reduction, the individual metal atoms function as the active sites, while g-C3N4 provides the source of hydrogen (H*) from the hydrogen evolution reaction. The complete, as-designed photocatalysts exhibit excellent activity in CO2 reduction. HCOOH is the preferred product of CO2 reduction on the Pd/g-C3N4 catalyst with a rate-determining barrier of 0.66 eV, while the Pt/g-C3N4 catalyst prefers to reduce CO2 to CH4 with a rate-determining barrier of 1.16 eV. In addition, deposition of atom catalysts on g-C3N4 significantly enhances the visible-light absorption, rendering them ideal for visible-light reduction of CO2. Our findings open a new avenue of CO2 reduction for renewable energy supply. PMID:27116595

  7. A graphitic hollow carbon nitride nanosphere as a novel photochemical internalization agent for targeted and stimuli-responsive cancer therapy

    Science.gov (United States)

    Liu, Chaoqun; Chen, Zhaowei; Wang, Zhenzhen; Li, Wei; Ju, Enguo; Yan, Zhengqing; Liu, Zhen; Ren, Jinsong; Qu, Xiaogang

    2016-06-01

    As a novel technique, photochemical internalization (PCI) has been employed as a new approach to overcome endo/lysosomal restriction, which is one of the main difficulties in both drug and gene delivery. However, the complicated synthesis procedure (usually requiring the self-assembly of polymers, photosensitizers and cargos) and payload specificity greatly limit its further application. In this paper, we employ a highly fluorescent graphitic hollow carbon nitride nanosphere (GHCNS) to simultaneously serve as a PCI photosensitizer, an imaging agent and a drug carrier. The surface modification of GHCNS with multifunctional polysaccharide hyaluronic acid (HA) endows the system with colloidal stability, biocompatibility and cancer cell targeting ability. After CD44 receptor-mediated endocytosis, the nanosystem is embedded in endo/lysosomal vesicles and HA could be specially degraded by hyaluronidase (Hyal), inducing open pores. In the following, with visible light illumination, GHCNS could produce ROS that effectively induced lipid peroxidation and caused endo/lysosomal membrane break, accelerating the cytoplasmic release of the drug in the targeted and irradiated cells. As a result, significantly increased therapeutic potency and specificity against cancer cells could be achieved.As a novel technique, photochemical internalization (PCI) has been employed as a new approach to overcome endo/lysosomal restriction, which is one of the main difficulties in both drug and gene delivery. However, the complicated synthesis procedure (usually requiring the self-assembly of polymers, photosensitizers and cargos) and payload specificity greatly limit its further application. In this paper, we employ a highly fluorescent graphitic hollow carbon nitride nanosphere (GHCNS) to simultaneously serve as a PCI photosensitizer, an imaging agent and a drug carrier. The surface modification of GHCNS with multifunctional polysaccharide hyaluronic acid (HA) endows the system with colloidal

  8. Graphitic carbon nitride nanosheet@metal-organic framework core-shell nanoparticles for photo-chemo combination therapy

    Science.gov (United States)

    Chen, Rui; Zhang, Jinfeng; Wang, Yu; Chen, Xianfeng; Zapien, J. Antonio; Lee, Chun-Sing

    2015-10-01

    Recently, nanoscale metal-organic frameworks (NMOFs) have started to be developed as a promising platform for bioimaging and drug delivery. On the other hand, combination therapies using multiple approaches are demonstrated to achieve much enhanced efficacy. Herein, we report, for the first time, core-shell nanoparticles consisting of a photodynamic therapeutic (PDT) agent and a MOF shell while simultaneously carrying a chemotherapeutic drug for effective combination therapy. In this work, core-shell nanoparticles of zeolitic-imadazolate framework-8 (ZIF-8) as shell embedded with graphitic carbon nitride (g-C3N4) nanosheets as core are fabricated by growing ZIF-8 in the presence of g-C3N4 nanosheets. Doxorubicin hydrochloride (DOX) is then loaded into the ZIF-8 shell of the core-shell nanoparticles. The combination of the chemotherapeutic effects of DOX and the PDT effect of g-C3N4 nanosheets can lead to considerably enhanced efficacy. Furthermore, the red fluorescence of DOX and the blue fluorescence of g-C3N4 nanosheets provide the additional function of dual-color imaging for monitoring the drug release process.Recently, nanoscale metal-organic frameworks (NMOFs) have started to be developed as a promising platform for bioimaging and drug delivery. On the other hand, combination therapies using multiple approaches are demonstrated to achieve much enhanced efficacy. Herein, we report, for the first time, core-shell nanoparticles consisting of a photodynamic therapeutic (PDT) agent and a MOF shell while simultaneously carrying a chemotherapeutic drug for effective combination therapy. In this work, core-shell nanoparticles of zeolitic-imadazolate framework-8 (ZIF-8) as shell embedded with graphitic carbon nitride (g-C3N4) nanosheets as core are fabricated by growing ZIF-8 in the presence of g-C3N4 nanosheets. Doxorubicin hydrochloride (DOX) is then loaded into the ZIF-8 shell of the core-shell nanoparticles. The combination of the chemotherapeutic effects of DOX

  9. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    International Nuclear Information System (INIS)

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness. - Highlights: • Measurements of wet-ability of liquid drops on a 30 nm Si3N4 film were performed. • Chemical composition was investigated by X-ray Photoelectron Spectroscopy (XPS). • Surface morphology was tested by Atomic Force Microscopy (AFM). • Ar+ bombardment increases the contact angle, oxygen content and surface roughness

  10. Nanoscale characterization of the dielectric charging phenomenon in PECVD silicon nitride thin films with various interfacial structures based on Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    This work presents a novel characterization methodology for the dielectric charging phenomenon in electrostatically driven MEMS devices using Kelvin probe force microscopy (KPFM). It has been used to study plasma-enhanced chemical vapor deposition (PECVD) silicon nitride thin films in view of application in electrostatic capacitive RF MEMS switches. The proposed technique takes the advantage of the atomic force microscope (AFM) tip to simulate charge injection through asperities, and then the induced surface potential is measured. The impact of bias amplitude, bias polarity, and bias duration employed during charge injection has been explored. The influence of various parameters on the charging/discharging processes has been investigated: dielectric film thickness, SiNx material deposition conditions, and under layers. Fourier transform infrared spectroscopy (FT-IR) and x-ray photoelectron spectroscopy (XPS) material characterization techniques have been used to determine the chemical bonds and compositions, respectively, of the SiNx films being investigated. The required samples for this technique consist only of thin dielectric films deposited over planar substrates, and no photolithography steps are required. Therefore, the proposed methodology provides a low cost and quite fast solution compared to other available characterization techniques of actual MEMS switches. Finally, the comparison between the KPFM results and the discharge current transients (DCT) measurements shows a quite good agreement.

  11. Thin film thickness measurements using Scanning White Light Interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B.; Kaminski, P.M.; Walls, J.M., E-mail: J.M.Walls@lboro.ac.uk

    2014-01-01

    Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb{sub 2}O{sub 5} and ZrO{sub 2}), a metal-nitride (SiN{sub x}:H), a carbon-nitride (SiC{sub x}N{sub y}:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area. - Highlights: • Capability to make thin film measurements with sub-nanometre accuracy • Measurements of thin film thickness made on metal-oxides, nitrides and carbon-nitrides • Excellent correlation with thickness measurements using spectroscopic ellipsometry • Thin film measurement and nanometrology from the same sample area.

  12. Thin film thickness measurements using Scanning White Light Interferometry

    International Nuclear Information System (INIS)

    Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb2O5 and ZrO2), a metal-nitride (SiNx:H), a carbon-nitride (SiCxNy:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area. - Highlights: • Capability to make thin film measurements with sub-nanometre accuracy • Measurements of thin film thickness made on metal-oxides, nitrides and carbon-nitrides • Excellent correlation with thickness measurements using spectroscopic ellipsometry • Thin film measurement and nanometrology from the same sample area

  13. Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level

    International Nuclear Information System (INIS)

    Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5-5 keV. X-ray photoelectron spectroscopy and factor analysis (FA) have been used to characterize the chemical composition of the films. The number of the different Ta-N phases formed during nitrogen implantation, as well as their spectral shapes and concentrations, have been obtained using principal component analysis and iterative target transformation factor analysis, without any prior assumptions. According to FA results, the composition of the tantalum nitride films depends on both the ion dose and the ion energy, and is mainly formed by a mixture of metallic tantalum, β-TaN0.05, γ-Ta2N and cubic/hexagonal TaN phases. The kinetics of tantalum nitridation is characterized by two stages. In the first stage, the formation of β-TaN0.05 species leads to a strong attenuation of the metallic tantalum signal. During the second stage, β-TaN0.05 transforms into γ-Ta2N and cubic/hexagonal TaN species. For intermediate ion doses, the concentration of γ-Ta2N reaches a maximum, subsequently decreasing because of its transformation into cubic/hexagonal TaN phases with increasing ion dose up to saturation. At saturation, the films are mainly composed of a mixture of γ-Ta2N and cubic/hexagonal TaN phases, but small Ta0 and β-TaN0.05 signals are also observed. They should be attributed to preferential sputtering of nitrogen and/or to the limited thickness of the film. Comparison of the experimental nitrogen concentration with that obtained using TRIDYN simulations suggests that, in addition to nitrogen implantation and atomic mixing, other mechanisms, like ion beam enhanced diffusion or the chemical reactivity of the tantalum substrate towards nitrogen, should also be taken into account at higher ion-beam energies. (orig.)

  14. Effects of substrate bias voltage and target sputtering power on the structural and tribological properties of carbon nitride coatings

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Pengfei, E-mail: wangpf@szu.edu.cn [Institute of Nanosurface Science and Engineering, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen 518060 (China); Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Takeno, Takanori [Laboratory of Nanointerface Engineering, Division of Mechanical Engineering, Tohoku University, Aoba 6-6-1, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Fontaine, Julien [Laboratoire de Tribologie et Dynamique des Systèmes, UMR 5513 – CNRS/Ecole Centrale de Lyon, Bâtiment H10, 36 Avenue Guy de Collongue, 69134 Écully Cedex (France); Aono, Masami [Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686 (Japan); Adachi, Koshi [Laboratory of Nanointerface Engineering, Division of Mechanical Engineering, Tohoku University, Aoba 6-6-1, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Miki, Hiroyuki [Center for Interdisciplinary Research, Tohoku University, Aoba 6-3, Aramaki, Aoba-ku, Sendai 980-8578 (Japan); Takagi, Toshiyuki [Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

    2014-06-01

    Effects of substrate bias voltage and target sputtering power on the structural and tribological properties of carbon nitride (CN{sub x}) coatings are investigated. CN{sub x} coatings are fabricated by a hybrid coating process with the combination of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) and DC magnetron sputtering at various substrate bias voltage and target sputtering power in the order of −400 V 200 W, −400 V 100 W, −800 V 200 W, and −800 V 100 W. The deposition rate, N/C atomic ratio, and hardness of CN{sub x} coatings as well as friction coefficient of CN{sub x} coating sliding against AISI 52100 pin in N{sub 2} gas stream decrease, while the residual stress of CN{sub x} coatings increases with the increase of substrate bias voltage and the decrease of target sputtering power. The highest hardness measured under single stiffness mode of 15.0 GPa and lowest residual stress of 3.7 GPa of CN{sub x} coatings are obtained at −400 V 200 W, whereas the lowest friction coefficient of 0.12 of CN{sub x} coatings is achieved at −800 V 100 W. Raman and XPS analysis suggest that sp{sup 3} carbon bonding decreases and sp{sup 2} carbon bonding increases with the variations in substrate bias voltage and target sputtering power. Optical images and Raman characterization of worn surfaces confirm that the friction behavior of CN{sub x} coatings is controlled by the directly sliding between CN{sub x} coating and steel pin. Therefore, the reduction of friction coefficient is attributed to the decrease of sp{sup 3} carbon bonding in the CN{sub x} coating. It is concluded that substrate bias voltage and target sputtering power are effective parameters for tailoring the structural and tribological properties of CN{sub x} coatings. - Highlights: • Various CN{sub x} coatings are produced using a unique hybrid coating process. • Structural and tribological properties of CN{sub x} coatings are investigated. • The lowest friction

  15. Aligned carbon nanotube thin films for DNA electrochemical sensing

    Energy Technology Data Exchange (ETDEWEB)

    Berti, F. [Department of Chemistry, University of Florence, Via della Lastruccia 3, Sesto Fiorentino, Firenze 50019 (Italy); Lozzi, L. [Department of Physics, University of L' Aquila, Coppito, L' Aquila 67100 (Italy); Palchetti, I. [Department of Chemistry, University of Florence, Via della Lastruccia 3, Sesto Fiorentino, Firenze 50019 (Italy); Santucci, S. [Department of Physics, University of L' Aquila, Coppito, L' Aquila 67100 (Italy); Marrazza, G. [Department of Chemistry, University of Florence, Via della Lastruccia 3, Sesto Fiorentino, Firenze 50019 (Italy)], E-mail: giovanna.marrazza@unifi.it

    2009-09-01

    Carbon nanotubes are interesting materials for DNA electrochemical sensing due to their unique electric properties: high surface area, fast heterogeneous electron transfer, and electrochemical stability. In this work aligned Carbon NanoTube (CNT) thin films were designed and tested as candidate platforms for DNA immobilization and for the development of an electrochemical genosensor. The films were prepared by Chemical Vapor Deposition (CVD) using acetylene and ammonia as precursor gases and nickel particles as catalyst. A preliminary electrochemical characterization was performed using cyclic voltammetry since, so far, these films have been used only for gas sensing. The surfaces were then covalently functionalized with a DNA oligonucleotide probe, complementary to the sequence of the most common inserts in the GMOs: the Promoter 35S. The genosensor format involved the immobilization of the probe onto the sensor surface, the hybridization with the target-sequence and the electrochemical detection of the duplex formation. Careful attention was paid to the probe immobilization conditions in order to minimize the signal due to non-specifically adsorbed sequences. For the detection of the hybridization event both label-free and enzyme-labelled methods were investigated. In case of the enzyme-labelled method a target concentration at nanomolar level can be easily detected, with a linear response from 50 nM to 200 nM, whereas the label-free method showed a linear response between 0.5 {mu}M and 10 {mu}M. The reproducibility was 11% and 20% with the enzyme-labelled method and the label-free method, respectively. The batch-to-batch reproducibility of the different sensors was also evaluated.

  16. Characterization of hydrogenated amorphous carbon nitride particles and coatings obtained in a CH4/N2 radiofrequency discharge

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon nitride (a-CN x:H) particles and coatings have been prepared in a CH4/N2 13.56 MHz radiofrequency discharge. Particles and films have been examined by Scanning Electron Microscopy (SEM) and by infrared (IR) absorption spectroscopy for different nitrogen contents. SEM micrographs show that the dust particles are spherical with diameters in the range 0.2-4 μm. The surface morphology of the particles is strongly modified with the increase of the nitrogen content in the gas mixture. In the particle and film IR spectra, four predominant absorption bands have been observed. They reveal the presence of C-H, C=C, C=N and/or N-H (1300-1800 cm-1), -C≡N and -N≡C (2000-2300 cm-1), C-H (2800-3100 cm-1) and N-H and/or O-H (3200-3600 cm-1) bonds. These absorption bands are studied in order to determine the influence of the nitrogen incorporation

  17. Significant enhancement of photoreactivity of graphitic carbon nitride catalysts under acidic conditions and the underlying H(+)-mediated mechanism.

    Science.gov (United States)

    Zhang, Xue-Song; Tian, Ke; Hu, Jian-Yang; Jiang, Hong

    2015-12-01

    Graphitic carbon nitride (g-C3N4) is an emerging photocatalyst for organic pollutants degradation owing to its excellent stability and metal-free property. In this study, the photocatalytic activity of acidified g-C3N4 (ag-C3N4) was systematically investigated using rhodamine B (rhB) as a model organic pollutant. The results showed the photoreactivity of ag-C3N4 is significantly enhanced with the decrease of pH values. The apparent rate constant (kapp) of rhB degradation over ag-C3N4 is 11.59×10(-3)min(-1) at pH7.0 and it increases to 103.50×10(-3)min(-1) at pH3.0 under visible light. A series of analyses demonstrate that the photodegradation mechanism is a combination of a H(+)-promoted generation of OH and elevation of the redox potential of conduct band of C3N4. The change of surface properties of C3N4 caused by pH variation also affects the degradation of some zwitterionic compounds by changing the adsorption orientation of pollutants. The revealed mechanism of visible light-C3N4-rhB system is meaningful to broaden the usage of C3N4 to the photodegradation of other organic pollutants. PMID:26172516

  18. Phosphorus-Doped Carbon Nitride Tubes with a Layered Micro-nanostructure for Enhanced Visible-Light Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Guo, Shien; Deng, Zhaopeng; Li, Mingxia; Jiang, Baojiang; Tian, Chungui; Pan, Qingjiang; Fu, Honggang

    2016-01-26

    Phosphorus-doped hexagonal tubular carbon nitride (P-TCN) with the layered stacking structure was obtained from a hexagonal rod-like single crystal supramolecular precursor (monoclinic, C2/m). The production process of P-TCN involves two steps: 1) the precursor was prepared by self-assembly of melamine with cyanuric acid from in situ hydrolysis of melamine under phosphorous acid-assisted hydrothermal conditions; 2) the pyrolysis was initiated at the center of precursor under heating, thus giving the hexagonal P-TCN. The tubular structure favors the enhancement of light scattering and active sites. Meanwhile, the introduction of phosphorus leads to a narrow band gap and increased electric conductivity. Thus, the P-TCN exhibited a high hydrogen evolution rate of 67 μmol h(-1) (0.1 g catalyst, λ >420 nm) in the presence of sacrificial agents, and an apparent quantum efficiency of 5.68 % at 420 nm, which is better than most of bulk g-C3 N4 reported. PMID:26692105

  19. Synthesis of a graphitic carbon nitride nanocomposite with magnetite as a sorbent for solid phase extraction of phenolic acids

    International Nuclear Information System (INIS)

    We have developed a facile in-situ growth method for the deposition of magnetite (Fe3O4) particles on the surface of a graphitic carbon nitride (g-C3N4) nanosheet. The material was characterized by X-ray diffraction, transmission electron microscopy, Fourier transform infrared spectroscopy, and thermogravimetric analysis. The high affinity of g-C3N4 for phenolic acids in combination with the magnetism of Fe3O4 provides an efficient means for magnetic solid phase extraction. The adsorption, desorption and recoveries were examined. Under optimized conditions, the method has limits of detection in the range from 17.5–42.6 ng mL−1 (at an S/N of 3), and precisions from 2.8–3.8 % (for n = 5). The method was successfully applied to the determination of protocatechuic, caffeic, and ferulic acids in Salicornia herbacea L. plant extracts. Recoveries ranged from 92.4–99.5 %. (author)

  20. Facile and Scale Up Synthesis of Red Phosphorus-Graphitic Carbon Nitride Heterostructures for Energy and Environment Applications

    Science.gov (United States)

    Ansari, Sajid Ali; Ansari, Mohammad Omaish; Cho, Moo Hwan

    2016-06-01

    The development of heterostructured materials for efficient solar energy conversion and energy storage devices are essential for practical applications. In this study, a simple and relatively inexpensive method was used to improve the visible light-driven photocatalytic activity and electrochemical supercapacitor behavior of the graphitic carbon nitride (g-C3N4) by elemental red phosphorus (RPh). The as-prepared RPh-g-C3N4 was characterized in detail using a range of spectroscopic techniques to understand the structure, morphology, chemical interaction, and chemical state of the materials. The visible light-driven photocatalytic activity and supercapacitive electrode performance were assessed by the photodegradation of model colored, non-colored organic pollutants, and electrochemical half-cell measurements, respectively. The RPh-g-C3N4 heterostructure with 30 weight percent of RPh exhibited remarkably high photocatalytic activity for the degradation of pollutants compared to the bare constituent materials, which was further confirmed by the photoelectrochemical study under similar visible photoirradiation conditions. The RPh-g-C3N4 heterostructure supercapacitor electrode displayed a high capacitance of 465 F/g and excellent cyclic stability with capacitance retention of 90% after 1000 cycles at a current of 10 A/g. The superior performance was attributed mainly to the narrow band gap, high surface area, capacitive nature of RPh, and nitrogen-rich skeleton of g-C3N4.

  1. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Qi-lin, E-mail: xiongql@hust.edu.cn [Department of Mechanics, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074 (China); Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Luoyu Road 1037, Wuhan 430074 (China); Tian, Xiao Geng [State Key Laboratory for Mechanical Structure Strength and Vibration, Xi’an Jiaotong University, Xi’an 710049 (China)

    2015-10-15

    The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs), single-walled carbon nanotubes (SWCNTs), and their hybrid structures (SWBN-CNTs) are investigated using molecular dynamics (MD) simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs), including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X) and the angles of bonds.

  2. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Qi-lin Xiong

    2015-10-01

    Full Text Available The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs, single-walled carbon nanotubes (SWCNTs, and their hybrid structures (SWBN-CNTs are investigated using molecular dynamics (MD simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs, including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X and the angles of bonds.

  3. Non-enzymatic photoelectrochemical sensing of hydrogen peroxide using hierarchically structured zinc oxide hybridized with graphite-like carbon nitride

    International Nuclear Information System (INIS)

    Hierarchically structured ZnO hybridized with graphitic carbon nitride (g-C3N4) is introduced as a new material for non-enzymatic photoelectrochemical sensing of hydrogen peroxide (H2O2). It is based on the measurement of the decrease in the photocurrent produced by H2O2 which consumes the photoinduced electrons ejected by the ZnO/g-C3N4 composite. The g-C3N4 has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers. This results in an enhanced photocurrent and high-sensitivity. The ZnO/g-C3N4 composite was characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffractometry, X-ray photoelectron spectrometry, and UV–vis spectrophotometry. Under the optimized condition, the sensor has a linear response to hydrogen peroxide in the 1.3–79.8 nM concentration range, and the detection limit is 0.38 nM. The sensor is sensitive, selective, stable and can be fabricated at low costs. (author)

  4. Carbon nitride deposition onto steel substrates by radio frequency plasma assisted pulsed laser deposition with substrate heating

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp3 / (sp2 + sp3) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40 W of RF power and 673 K of substrate temperature. The maximum adhesion strength of 14.8 MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94 GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished no. 150 at 40 W of RF power and 673 K of substrate temperature.

  5. Carbon nitride deposition onto steel substrates by radio frequency plasma assisted pulsed laser deposition with substrate heating

    Energy Technology Data Exchange (ETDEWEB)

    Yasui, Toshiaki, E-mail: yasui@me.tut.ac.jp [Department of Mechanical Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Kimura, Shingo [Department of Production Systems Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Nishikawa, Ryutaro; Fukumoto, Masahiro [Department of Mechanical Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2012-11-15

    Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp{sup 3} / (sp{sup 2} + sp{sup 3}) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40 W of RF power and 673 K of substrate temperature. The maximum adhesion strength of 14.8 MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94 GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished no. 150 at 40 W of RF power and 673 K of substrate temperature.

  6. Facile fabrication of novel porous graphitic carbon nitride/copper sulfide nanocomposites with enhanced visible light driven photocatalytic performance.

    Science.gov (United States)

    Chen, Xi; Li, Huankun; Wu, Yuxin; Wu, Hanshuo; Wu, Laidi; Tan, Pengfei; Pan, Jun; Xiong, Xiang

    2016-08-15

    In this work, a novel organic-inorganic heterostructured photocatalyst: porous graphitic carbon nitride (g-C3N4) hybrid with copper sulfide (CuS) had been synthesized via a precipitation-deposition method at low temperature for the first time. UV-vis spectroscopy revealed the porous g-C3N4/CuS nanocomposites showed a strong and broad visible light absorption. Furthermore, the g-C3N4/CuS nanocomposites showed higher photocatalytic activity in the photodegradation of various organic dyes than that of pure g-C3N4 and CuS, and the selected sample of g-C3N4/CuS-2 exhibited the best photocatalytic activity under visible light. The good photocatalytic activity could be ascribed to the matching of the g-C3N4 and CuS band gap energies. Besides, photoluminescent spectra and photoelectrochemical measurements also proved that the CuS/g-C3N4 could greatly enhance the charge generation and suppress the charge recombination of photogenerated carriers. According to the experimental result, a possible photocatalytic mechanism has been proposed. Due to the high stability, the porous g-C3N4/CuS could be applied in the field of environmental remediation. Our work highlights that coupling semiconductors with well-matched band energies provides a facile way to improve the photocatalytic activity. PMID:27209398

  7. First-principles study of hydrogen storage on Ti (Sc)-decorated boron-carbon-nitride sheet

    Energy Technology Data Exchange (ETDEWEB)

    Song Nahong [College of Computer and Information Engineering, Henan University of Economics and Law, Zhengzhou 450002 (China); Wang Yusheng [College of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou, Henan 450011 (China); Center of Clean Energy and Quantum Structures, School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450052 (China); Sun Qiang [Center of Clean Energy and Quantum Structures, School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450052 (China); Jia Yu, E-mail: xxwysheng@163.com [Center of Clean Energy and Quantum Structures, School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450052 (China)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer The gravimetric densities of H{sub 2} are 7.6 wt% and 7.8 wt%, respectively. Black-Right-Pointing-Pointer The average adsorption energy of hydrogen molecule is in the range of 0.4-0.56 eV/H{sub 2} (0.13-0.27 eV/H{sub 2}). Black-Right-Pointing-Pointer It can operate under ambient thermodynamic conditions. - Abstract: Ab initio first-principles calculations are carried out to investigate Ti (Sc)-decorated two-dimensional boron-carbon-nitride (BC{sub 2}N) sheets for their application as hydrogen storage materials. The results show that with four H{sub 2} molecules attached to per metal atom the Ti (Sc)-decorated BC{sub 2}N can store up to 7.6 wt% (7.8 wt%) of hydrogen in molecular form. The Kubas interaction and the polarization mechanism lead to the adsorption energy within the range of 0.4-0.56 eV/H{sub 2} (0.13-0.27 eV/H{sub 2}), which is suitable for ambient temperature hydrogen storage.

  8. Origin of photoactivity in graphitic carbon nitride and strategies for enhancement of photocatalytic efficiency: insights from first-principles computations.

    Science.gov (United States)

    Zhang, Haijun; Zuo, Xueqin; Tang, Huaibao; Li, Guang; Zhou, Zhen

    2015-03-01

    The origin of the photoactivity in graphitic carbon nitride (g-C3N4) and the strategies for improving its photocatalytic efficiency were systematically investigated using first-principles computations. We found that g-C3N4 composed of tri-s-triazine units (g-CN1) is preferable in photocatalysis, owing to its visible-light absorption and appropriate band edge potentials. Despite the benefit of nanocrystallization of g-CN1, excessively minimized and passivated g-CN1 nanosheets (g-CN1NSs) should be inhibited, due to the intensely broadened band gaps in these structures. C- or N-vacancies in g-CN1NSs lead to gap states and smaller band widths, which should also be restrained. Compared with C substitution in B doped g-CN1NSs, N-substitution is favourable for enhancing the photoactivity of g-CN1NSs, due to the red-shift light absorption and the absence of gap states within this structure. Both WTe2 coupled and CdSe cluster loaded g-CN1NSs have decreased band gaps and directly separated carriers, which are beneficial to promote the photoactivity of g-CN1NSs. Among these modified g-CN1NS photocatalysts, WTe2 coupled g-CN1NSs are more preferable, as a result of their smaller band gap, free gap states and more rapid migration of excitons. PMID:25648139

  9. Polymeric Graphitic Carbon Nitride Doped with CuO Dispersed on Dealuminated Clinoptilolite (CuO/HCP: Synthesis and Characterisation

    Directory of Open Access Journals (Sweden)

    Saheed Olalekan Sanni

    2015-01-01

    Full Text Available CuO dispersed on dealuminated clinoptilolite (CuO/HCP and further doped with polymeric graphitic carbon nitride (CuO/HCP-g-C3N4 was synthesized through 2 facile routes: precipitation method for CuO/HCP and impregnation through ultrasonication method for the hybrid composite material. The hybrid composite material crystalline phase, surface morphology, and structural and thermal properties were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, energy-dispersive X-ray analysis (EDAX, Fourier transform infrared spectroscopy (FTIR, and thermal analysis. The formation of the hybrid composite material was confirmed by XRD showing crystalline phase of CuO and g-C3N4 present on the surface of dealuminated clinoptilolite (HCP. SEM images analysis depicts no aggregation of the mixed metal oxide semiconductor nanoparticles at the center of HCP. The hybrid composite material, CuO/HCP-g-C3N4, with a good homogeneously dispersed metal oxide conductor having excellent catalytic activities has been synthesized.

  10. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    International Nuclear Information System (INIS)

    The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs), single-walled carbon nanotubes (SWCNTs), and their hybrid structures (SWBN-CNTs) are investigated using molecular dynamics (MD) simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs), including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X) and the angles of bonds

  11. Large-scale production of graphitic carbon nitride with outstanding nitrogen photofixation ability via a convenient microwave treatment

    Science.gov (United States)

    Ma, Huiqiang; Shi, Zhenyu; Li, Shuang; Liu, Na

    2016-08-01

    A convenient microwave treatment for synthesizing graphitic carbon nitride (g-C3N4) with outstanding nitrogen photofixation ability under visible light is reported. X-ray diffraction (XRD), N2 adsorption, UV-vis spectroscopy, SEM, N2-TPD, EPR, photoluminescence (PL) and photocurrent measurements were used to characterize the prepared catalysts. The results indicate that microwave treatment can form many irregular pores in as-prepared g-C3N4, which causes the increased surface area and separation rate of electrons and holes. More importantly, microwave treatment causes the formation of many nitrogen vacancies in as-prepared g-C3N4. These nitrogen vacancies not only serve as active sites to adsorb and activate N2 molecules but also promote interfacial charge transfer from catalysts to N2 molecules, thus significantly improving the nitrogen photofixation ability. Moreover, the present process is a convenient method for large-scale production of g-C3N4 which is significantly important for the practical application.

  12. Carbon nanotube thin film transistors based on aerosol methods

    International Nuclear Information System (INIS)

    We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V-1 s-1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.

  13. Thermionic cooling with functionalized carbon nanotube thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Feng, E-mail: fjin@bsu.edu [Department of Physics and Astronomy, Ball State University, Muncie, Indiana 47306 (United States); Little, Scott [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2015-03-16

    A large thermionic cooling effect is reported. Temperature reduction as much as 81 °C has been observed on a functionalized carbon nanotubes (CNTs) cathode surface. This cathode utilizes a thin coating of low work function barium strontium oxide emissive materials on top of the CNTs to lower the surface work function. This, combined with the field effect induced by the CNTs, results in an even lower effective work function, and thus strong thermionic emission. Strong thermionic emission is the underlying reason for the large cooling effect observed, and the largest emission current in this study is around 160 mA on a 0.0727 cm{sup 2} emitting surface at around 995 °C. Multiple samples were used in studying thermionic mission at cathode temperature ranging between 750 °C and 1100 °C, and in establishing correlation between the cooling effect and the emission current. Details of the cooling effect measurement are provided, and the measurement results show a clear linear dependence of temperature drop on thermionic emission current. The possible implication of this linear dependence is also discussed.

  14. Thermionic cooling with functionalized carbon nanotube thin films

    International Nuclear Information System (INIS)

    A large thermionic cooling effect is reported. Temperature reduction as much as 81 °C has been observed on a functionalized carbon nanotubes (CNTs) cathode surface. This cathode utilizes a thin coating of low work function barium strontium oxide emissive materials on top of the CNTs to lower the surface work function. This, combined with the field effect induced by the CNTs, results in an even lower effective work function, and thus strong thermionic emission. Strong thermionic emission is the underlying reason for the large cooling effect observed, and the largest emission current in this study is around 160 mA on a 0.0727 cm2 emitting surface at around 995 °C. Multiple samples were used in studying thermionic mission at cathode temperature ranging between 750 °C and 1100 °C, and in establishing correlation between the cooling effect and the emission current. Details of the cooling effect measurement are provided, and the measurement results show a clear linear dependence of temperature drop on thermionic emission current. The possible implication of this linear dependence is also discussed

  15. Construction of carbon quantum dots/proton-functionalized graphitic carbon nitride nanocomposite via electrostatic self-assembly strategy and its application

    Science.gov (United States)

    Jian, Xuan; Liu, Xian; Yang, Hui-min; Li, Jia-gang; Song, Xiu-li; Dai, Hong-yan; Liang, Zhen-hai

    2016-05-01

    Carbon quantum dots (CQDs) and graphitic carbon nitride (g-C3N4), as advanced metal-free material catalysts have been the focus of considerable attention because of their superior photocatalytic activities. In this study, we developed a novel approach to obtain CQDs/g-C3N4 nanocomposite with effective interfacial contact by incorporating negatively charged CQDs and tailor-made proton-functionalized g-C3N4via the electrostatic self-assembly strategy. Then, the morphology and microstructure of the new nanocomposite were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible diffuse reflectance spectroscopy (DRS) and X-ray photoelectron spectroscopy (XPS). The CQDs and proton-functionalized g-C3N4 nanocomposite exhibited excellent electron transfer properties though electrochemical impedance spectroscopy (EIS), significantly enhanced photoactivity in the photoelectrochemical i-t curve test and degradation of methylene blue solution under visible light irradiation. These results demonstrated that the electrostatic self-assembly strategy process is a promising method of fabricating uniform metal-free material catalysts for an extensive range of applications.

  16. Boron carbon nitride materials for tribological and high temperature device applications

    International Nuclear Information System (INIS)

    We have used ion (or neutral) and electron cyclotron resonance assisted physical vapor deposition to produce high quality BN/CN thin films on Si and sapphire substrates. We have already demonstrated deposition of films containing a high fraction of the metastable c-BN phase as determined by FTIR spectroscopy and transmission electron microscopy (TEM). Atomic force microscopy (AFM) measurements have shown our films to have an excellent rms roughness ∼10.5 A (which is better than the best CVD diamond thin films). Results from frictional force microscopy (FFM) from BN and BCN films show a direct correlation with surface N content. Preliminary results show friction properties superior to that of TiN (the standard in the thin film coatings industry). Hardness measurements on the same films yielded Knoop hardness (KH) values of ∼3350 kg/mm2, close to that of ceramic c-BN (3500 kg/mm2). In this paper we will present our results on the synthesis of these materials and discuss their hardness and tribological properties. Finally, BN and CN samples have been subjected to laser experiments and preliminary results are encouraging as far as the application of these materials to high temperature, high power optoelectronic systems and solid state device fabrication

  17. Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

    International Nuclear Information System (INIS)

    Pole tip recession (PTR) is one of the major issues faced in magnetic tape storage technology, which causes an increase in the magnetic spacing and hence signal loss during data readback. Despite efforts to reduce the magnetic spacing, PTR, and surface wear on the heads by using protective overcoats, most of them either employ complex fabrication processes and approaches do not provide adequate protection to the head or are too thick (∼10–20 nm), especially for future high density tape storage. In this work, we discuss an approach to reduce the PTR and surface wear at the head by developing an ultrathin ∼7 nm bilayer overcoat of silicon/silicon nitride (Si/SiNx) and carbon (C), which is totally fabricated by a cost-effective and industrial-friendly magnetron sputtering process. When compared with a monolithic C overcoat of similar thickness, the electrically insulating Si/SiNx/C bilayer overcoat was found to provide better wear protection for commercial tape heads, as demonstrated by Auger electron spectroscopic analyses after wear tests with commercial tape media. Although the microstructures of carbon in the monolithic and bilayer overcoats were similar, the improved wear durability of the bilayer overcoat was attributed to the creation of extensive interfacial bonding of Si and N with the C overcoat and the alumina-titanium carbide composite head substrate, as predicted by time-of-flight secondary ion mass spectrometry and confirmed by in-depth X-ray photoelectron spectroscopy analyses. This study highlights the pivotal role of enhanced interfaces and interfacial bonding in developing ultrathin yet wear-durable overcoats for tape heads

  18. Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

    Science.gov (United States)

    Yeo, Reuben J.; Dwivedi, Neeraj; Zhang, Lu; Zhang, Zheng; Lim, Christina Y. H.; Tripathy, S.; Bhatia, Charanjit S.

    2015-01-01

    Pole tip recession (PTR) is one of the major issues faced in magnetic tape storage technology, which causes an increase in the magnetic spacing and hence signal loss during data readback. Despite efforts to reduce the magnetic spacing, PTR, and surface wear on the heads by using protective overcoats, most of them either employ complex fabrication processes and approaches do not provide adequate protection to the head or are too thick (˜10-20 nm), especially for future high density tape storage. In this work, we discuss an approach to reduce the PTR and surface wear at the head by developing an ultrathin ˜7 nm bilayer overcoat of silicon/silicon nitride (Si/SiNx) and carbon (C), which is totally fabricated by a cost-effective and industrial-friendly magnetron sputtering process. When compared with a monolithic C overcoat of similar thickness, the electrically insulating Si/SiNx/C bilayer overcoat was found to provide better wear protection for commercial tape heads, as demonstrated by Auger electron spectroscopic analyses after wear tests with commercial tape media. Although the microstructures of carbon in the monolithic and bilayer overcoats were similar, the improved wear durability of the bilayer overcoat was attributed to the creation of extensive interfacial bonding of Si and N with the C overcoat and the alumina-titanium carbide composite head substrate, as predicted by time-of-flight secondary ion mass spectrometry and confirmed by in-depth X-ray photoelectron spectroscopy analyses. This study highlights the pivotal role of enhanced interfaces and interfacial bonding in developing ultrathin yet wear-durable overcoats for tape heads.

  19. Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

    Energy Technology Data Exchange (ETDEWEB)

    Yeo, Reuben J.; Dwivedi, Neeraj; Bhatia, Charanjit S., E-mail: elebcs@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore 117583 (Singapore); Zhang, Lu [Institute of Microelectronics (IME), A*STAR (Agency for Science, Technology, and Research), 11 Science Park Road, Singapore Science Park II, Singapore, Singapore 117685 (Singapore); Zhang, Zheng; Tripathy, S. [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore, Singapore 117602 (Singapore); Lim, Christina Y. H. [Department of Mechanical Engineering, National University of Singapore, Singapore, Singapore 117575 (Singapore)

    2015-01-28

    Pole tip recession (PTR) is one of the major issues faced in magnetic tape storage technology, which causes an increase in the magnetic spacing and hence signal loss during data readback. Despite efforts to reduce the magnetic spacing, PTR, and surface wear on the heads by using protective overcoats, most of them either employ complex fabrication processes and approaches do not provide adequate protection to the head or are too thick (∼10–20 nm), especially for future high density tape storage. In this work, we discuss an approach to reduce the PTR and surface wear at the head by developing an ultrathin ∼7 nm bilayer overcoat of silicon/silicon nitride (Si/SiN{sub x}) and carbon (C), which is totally fabricated by a cost-effective and industrial-friendly magnetron sputtering process. When compared with a monolithic C overcoat of similar thickness, the electrically insulating Si/SiN{sub x}/C bilayer overcoat was found to provide better wear protection for commercial tape heads, as demonstrated by Auger electron spectroscopic analyses after wear tests with commercial tape media. Although the microstructures of carbon in the monolithic and bilayer overcoats were similar, the improved wear durability of the bilayer overcoat was attributed to the creation of extensive interfacial bonding of Si and N with the C overcoat and the alumina-titanium carbide composite head substrate, as predicted by time-of-flight secondary ion mass spectrometry and confirmed by in-depth X-ray photoelectron spectroscopy analyses. This study highlights the pivotal role of enhanced interfaces and interfacial bonding in developing ultrathin yet wear-durable overcoats for tape heads.

  20. The influence of Cu-doping on aluminum nitride, silicon carbide and boron nitride nanotubes’ ability to detect carbon dioxide; DFT study

    Science.gov (United States)

    Mahdavifar, Zabiollah; Abbasi, Nasibeh

    2014-02-01

    In this research, the potential use of Cu-functionalized [4,4] silicon carbide (SiC), aluminum nitride (AlN) and boron nitride (BN) single-walled nanotubes as nanodevices for CO2 monitoring is investigated. It is found that Cu-doping the different sites of the considered nanotubes and combining these nanotubes with CO2 gas molecules are both exothermic processes, and the relaxed geometries are stable. Our results reveal that the CO2 gas molecules can be strongly physisorbed on the Cu-doped nanotubes, accompanied by large adsorption energy. Compared with the weak adsorption of CO2 molecule onto pristine BNNT and SiCNT, the CO2 molecule tends to be strongly physisorbed onto Cu-decorated BNNT and SiCNT with an appreciable adsorption energy. Furthermore, the results indicate that Cu-functionalized SiCNT is more favorable than Cu-doped BNNT and AlNNT structures for CO2 adsorption. Natural bond orbital analysis indicates that the adsorption of a CO2 molecule onto Cu-doped nanotubes is influenced by the electronic conductance and mechanical properties of the nanotube, which could serve as a signal for a gas sensor. It appears that the considerable charge transfer from the Cu-doped nanotubes to a CO2 molecule reduces the energy gap. These observations suggest that the Cu-doped-SiCNT, -BNNT and -AlNNT can be introduced as promising candidates for gas sensor devices that detect CO2 molecules.

  1. Carbon diffusion in uncoated and titanium nitride coated iron substrates during microwave plasma assisted chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Auger Electron Spectroscopy has been employed to investigate the effectiveness of thin films of TiN as barriers to carbon diffusion during Chemical Vapor Deposition (CVD) of diamond onto Fe substrates. Auger Depth Profiling was used to monitor the C concentration in the TiN layer, through the interface and into the substrate both before and after CVD diamond deposition. The results show that a layer of TiN only 250 Angstroems thick is sufficient to inhibit soot formation on the Fe surface and C diffusion into the Fe bulk. 14 refs., 4 figs

  2. Preparation of new titanium nitride-carbon nanocomposites in supercritical benzene and their oxygen reduction activity in alkaline medium

    International Nuclear Information System (INIS)

    Highlights: • TiN/C/graphene composite (SIV) was synthesized using supercritical benzene medium. • SIV catalyst shows high ORR activity due to both TiN and graphene phases. • SIV improves ORR via a mainly 4-electron pathway to form water and around 16% H2O2. • SIV exhibits high stability due to reduce H2O2 and prevent surface poisoning. - Abstract: Titanium nitride-carbon nanocomposites are synthesized by the reaction of TiCl4 and NaN3 in supercritical benzene medium that also serves as a carbon source. The as-prepared precursors (SI, SII) are subjected to several heat treatments (SIII–SV). The synthesized nanoparticles are characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The samples are tested as electrocatalyst for oxygen reduction reaction in an alkaline electrolyte. It is shown that the electrocatalytic properties of the synthesized nanoparticles are highly dependent on the heat treatment atmosphere and duration. The heat treatment under ammonia atmosphere at 1000 °C for 10 h (SIV) increased the ORR mass activity from −0.64 (SI) to −1.28 mA mg−1 (SIV) at −0.6 V vs. SCE. Moreover, the heat treated sample (SIV) shows almost twice ORR mass activity as commercial TiN. Rotating disk electrode (RDE) measurements exhibit ORR on commercial TiN proceeds via two parallel pathways including two and four electrons, resulting in almost 60% H2O2 production, while SIV sample improves ORR by reducing H2O2 formation to almost 16%. The high ORR activity and stability of the sample SIV are mainly due to (i) random layer structure of carbon that combines through a hybrid state with TiN nanoparticles, (ii) unstoichiometric nitrogen and oxygen doped into TiN lattice, and (iii) higher electrochemical surface area. Moreover, the possible pathways of carbon phase formation in vicinity of

  3. Anomalous electrostatic potential properties in carbon nanotube thin films under a weak external electric field

    OpenAIRE

    Ishiyama, U; Cuong, Nguyen Thanh; Okada, Susumu

    2016-01-01

    Using density functional theory, we studied the electronic properties of carbon nanotube (CNT) thin films under an electric field. The carrier accumulation due to the electric field depends strongly on the CNT species forming the thin films. Under a low electron concentration, the injected electrons are distributed throughout the CNTs, leading to an unusual electric field between CNTs, the direction of which is opposite to that of the applied field. This unusual field response of CNT thin fil...

  4. Study of carbon nitride compounds synthesised by co-implantation of 13C and 14N in copper at different temperatures

    International Nuclear Information System (INIS)

    Research highlights: → Simultaneous implantation of 13C and 14N in copper were performed to synthesise CNx compounds. → The formation of fullerene-like CNx compounds was highlighted by XPS and TEM. → Only about 20% of the implanted 14N atoms are contained in the FL CxNy structures. → The exceeding of implanted nitrogen precipitates in large N2 gas bubbles. → A growth model for the FL CxNy structures is proposed. - Abstract: Carbon nitride compounds have been synthesised in copper by simultaneous high fluence (1018 at. cm-2) implantation of 13C and 14N ions. During the implantation process, the substrate temperature was maintained at 25, 250, 350 or 450 deg. C. Depth profiles of 13C and 14N were determined using the non-resonant nuclear reactions (NRA) induced by a 1.05 MeV deuteron beam. The retained doses were deduced from NRA measurements and compared to the implanted fluence. The chemical bonds between carbon and nitrogen were studied as a function of depth and temperature by X-ray photoelectron spectroscopy (XPS). The curve fitting of C 1s and N 1s core level photoelectron spectra reveal different types of C-N bonds and show the signature of N2 molecules. The presence of nitrogen gas bubbles in copper was highlighted by mass spectroscopy. The structure of carbon nitride compounds was characterised by transmission electron microscopy (TEM). For that purpose, cross-sectional samples were prepared using a focused ion beam (FIB) system. TEM observations showed the presence of small amorphous carbon nitride 'nano-capsules' and large gas bubbles in copper. Based on our observations, we propose a model for the growth of these nano-objects. Finally, the mechanical properties of the implanted samples were investigated by nano-indentation.

  5. Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

    International Nuclear Information System (INIS)

    Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiNx through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe2 n-MOSFETs with a mobility of ∼70 cm2/V s

  6. Tribological properties of ion beam deposited diamond-like carbon film on silicon nitride

    International Nuclear Information System (INIS)

    The present article reports on the physical characterization and tribological properties of diamond-like carbon (DLC) films deposited on structural Si3N4 substrates. The films were deposited by the direct ion beam deposition technique. The ion beam was produced by plasma discharge of pre-mixed methane and hydrogen gas in a Kaufman-type ion source. The deposited films were found to be amorphous and contained about 70% carbon and 30% hydrogen. The friction coefficient of an uncoated Si3N4 ball on a DLC coated Si3N4 disc starts at about 0.2, then decreases rapidly to 0.1-0.15 with increasing sliding distance. Increasing humidity results in a slight increase in friction coefficient, but a significant decrease in wear factor. The wear factor for the tests at ≅60% rh (relative humidity) are about an order of magnitude smaller than the tests at 3% rh. (orig.)

  7. Corrosion resistance and electrical properties of carbon/chromium-titanium-nitride multilayer coatings on stainless steel

    Science.gov (United States)

    Feng, Kai; Li, Zhuguo; Lu, Fenggui; Huang, Jian; Cai, Xun; Wu, Yixiong

    2014-03-01

    High electrical conductivity and corrosion resistance are central to advances in wider application of metallic bipolar plates in polymer electrolyte membrane fuel cell (PEMFC). In this study, C/Cr-Ti-N multilayer coatings are deposited by physical vapor deposition and the effect of Cr:Ti ratio on the corrosion resistance and interfacial contact resistance (ICR) are systematically investigated. Scanning electron microscopy (SEM) result shows that the carbon layer is compact and uniform. Excellent corrosion resistance of 0.127 μA cm-2 current density at operating voltage in PEMFC cathode environment and low ICR of 2.03 mΩ-cm2 at compaction force of 150 N cm-2 are achieved when Cr:Ti ratio is 2:4 and 3:3, respectively. The significant enhancement in surface conductivity is probably because that the current comes from carbon paper is homogenized by two electrically conductive layers and flows to the passive film with much more contact area. After polarization, ICR increase to 3.07 mΩ-cm2 and 3.02 mΩ-cm2 in the simulated PEMFC cathode and anode environment, respectively. However, the Raman spectroscopy results disclose that the bonding type of top carbon film before and after polarization shows little difference. The results indicate that C/Cr-Ti-N multilayer coating with Cr:Ti ratio of 2:4 achieves the optimal composition.

  8. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  9. Dense Z-pinches by carbon fiber pinch and by conductive thin film linear compression

    International Nuclear Information System (INIS)

    Dense Z-pinch plasmas are created by two different ways and are examined experimentally. A stable plasma column existing for about 20 ns has been created in the carbon fiber pinch driven by a pulsed power generator. Any significant differences in emitted soft X-ray intensity from the plasma are not observed between fiber pinches of carbon fiber with nickel or copper coating and without any coating material. Techninal difficulties in handling thin foil metal liner for linear compression experiments are overcome by proposing a conductive thin film deposited on the surface of discharge tube wall as a compression liner. Uniform cyclindrical compression of the thin film liner has been confirmed

  10. Identification of B-K near edge x-ray absorption fine structure peaks of boron nitride thin films prepared by sputtering deposition

    International Nuclear Information System (INIS)

    Four π* resonance peaks were observed in the B-K near edge x-ray absorption fine structure spectra of boron nitride thin films prepared by magnetron sputtering. In the past, these peaks have been explained as the K-absorption of boron atoms, which are present in environment containing nitrogen vacancies, the number of which is 1-3 corresponding to the three peaks at higher photon energy. However, the authors found that there was a strong correlation between the intensities of these three peaks and that of O-K absorption after wide range scanning and simultaneous measurement of nitrogen and oxygen K-absorptions of the BN films. Therefore, the authors conclude that these three peaks at the higher energy side correspond to boron atoms bound to one-to-three oxygen atoms instead of three nitrogen atoms surrounding the boron atom in the h-BN structure. The result of the first-principles calculation with a simple cluster model supported the validity of this explanation.

  11. Silicon nitride anti-reflection coating on the glass and transparent conductive oxide interface for thin film solar cells and modules

    Science.gov (United States)

    Iwahashi, T.; Morishima, M.; Fujibayashi, T.; Yang, R.; Lin, J.; Matsunaga, D.

    2015-10-01

    Anti-reflection coating (ARC) is well known as an important technique to enhance solar cell performance. Typical ARC has been applied on the glass surface to reduce light reflection loss at the air/glass interface. However, reflection loss occurs not only at glass surface but also at other interfaces such as glass/transparent conductive oxide (TCO) interface. The refractive index of SiNx is tunable from 1.6 to 2.7, and the range from 1.7 to 2.0 is suitable for ARC at glass/TCO interface. In this study, we examined the AR effect of silicon nitride (SiNx) deposited by plasma enhanced chemical vapor deposition at the glass/TCO interface with thin film silicon solar cell and module. Reflectivity reduction of 1.6% for glass/ZnO substrate has been obtained with optimal SiNx layer, which contribute 2.0% gain in cell efficiency. Besides, we also confirmed the relative efficiency gain of around 2% for large-sized solar module, leading to a world-record large area stabilized module conversion efficiency of 12.34%.

  12. The effects of the pressure and the oxygen content of the sputtering gas on the structure and the properties of zinc oxy-nitride thin films deposited by reactive sputtering of zinc

    International Nuclear Information System (INIS)

    Zinc nitride and oxy-nitride thin films were prepared by reactive magnetron rf sputtering of zinc in either nitrogen–argon or nitrogen–argon–oxygen ambient. The effects of varying the total sputtering pressure and the oxygen fraction in the total sputtering gas mixture on the microstructure, electrical and optical properties were investigated. With increasing the sputtering pressure, the dominant phase comprising the film material changes from the crystalline zinc nitride phase to crystalline zinc oxide. The characteristic pressure, at which this change in the dominant phase is observed, decreases with the increase of the oxygen fraction in the total sputtering gas mixture. The increase of the oxygen content in the films (from 5 at.% to a maximum of 40 at.%) and the downward shift in the optical absorption edge (from 920 to 400 nm), combined with the x-ray diffraction data, support these observations, indicating the controllable fabrication of an oxy-nitride film material. Correlations between the films’ fabrication conditions, including post-deposition annealing, their structure and composition, and their electrical properties are examined as well. (paper)

  13. Investigations of cobalt and carbon codoping in gallium nitride for spintronic applications

    International Nuclear Information System (INIS)

    Extensive theoretical investigations have been carried out to study the ferromagnetic properties of transition metal doped wurtzite GaN using the Tight Binding Linear Muffin-tin Orbital (TBLMTO) method within the density functional theory. The present calculation reveals ferromagnetism in cobalt doped GaN when one gallium is replaced by cobalt in a 3×3×2 supercell of GaN, which gives rise to a cobalt concentration of 2.77%. The system is half-metallic with a magnetic moment of 4.0 μB. When Co is bonded with one carbon, there is a drastic decrease in magnetic moment and the system becomes metallic. When Co dimer is introduced via nitrogen which corresponds to the Co concentration of 5.5% the magnetic moment is 3.99 μB and the system is half-metallic. Same trend is observed when Co is bonded via nitrogen with unequal distance. When cobalt dimer is formed via carbon, the moment becomes 2.95 μB and it shows metallic character. For dimer via carbon with unequal distance, the moment is 3.0 μB and the system becomes semiconductor. For higher percentage of cobalt dopant the system shows metallic character. C and Co doped GaN samples have been synthesized experimentally and characterized with X-ray diffraction, transmission electron microscopy, micro-Raman and superconducting quantum interface device measurements. The observed results are correlated with the theoretical studies. - Highlights: ► DFT theory studies on Co and C doped GaN. ► Synthesis and characterization of pure and codoped GaN. ► Correlation between theoretical and experimental results. ► Applications in the field of Spintronics.

  14. The oxidation stability of boron nitride thin films on MgO and TiO2 substrates

    International Nuclear Information System (INIS)

    The stability of BN thin film coatings (2--5 nm thick) on MgO and TiO2 substrates was investigated using transmission electron microscopy (TEM). The samples were heated in air for at least 16 hours at temperatures ranging from 773 K--1,273 K. On MgO supports, the BN thin film coating was lost by 1,073 K due to a solid state reaction with the substrate leading to formation of Mg2B2O5. No such reaction occurred with the TiO2 substrate and the BN was stable even at 1,273 K. However, the coating appeared to ball up and phase segregate into islands of near-graphitic BN and clumps of TiO2 (rutile). The oxidizing treatment appears to promote the transformation from turbostratic BN to graphitic BN

  15. Reactive Pulsed Laser Deposition of titanium nitride thin film: Optimization of process parameters using Secondary Ion Mass Spectrometry

    International Nuclear Information System (INIS)

    Reactive Pulsed Laser Deposition is a single step process wherein the ablated elemental metal reacts with a low pressure ambient gas to form a compound. We report here a Secondary Ion Mass Spectrometry based analytical methodology to conduct minimum number of experiments to arrive at optimal process parameters to obtain high quality TiN thin film. Quality of these films was confirmed by electron microscopic analysis. This methodology can be extended for optimization of other process parameters and materials.

  16. Amorphous carbon nitride as an alternative electrode material in electroanalysis: Simultaneous determination of dopamine and ascorbic acid

    Energy Technology Data Exchange (ETDEWEB)

    Medeiros, Roberta A., E-mail: roantigo@hotmail.com [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil); Matos, Roberto [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil); Benchikh, Abdelkader [LECVE, Faculté de la Technologie, Département de Génie des Procédés, Université Abderrahmane MIRA, Béjaïa (Algeria); LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Saidani, Boualem [LECVE, Faculté de la Technologie, Département de Génie des Procédés, Université Abderrahmane MIRA, Béjaïa (Algeria); Debiemme-Chouvy, Catherine [LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Deslouis, Claude, E-mail: claude.deslouis@upmc.fr [LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil)

    2013-10-03

    Graphical abstract: -- Highlights: •a-CN{sub x} films are a new class of electrodic carbon materials that present several properties similar to those of BDD films. •a-CN{sub x} and BDD were used as working electrodes for simultaneous determination of DA and AA. •Electrochemical pretreatments on a-CN{sub x} or BDD modified the nature of the surface terminations. •An anodic pretreatment in 0.1 mol L{sup −1} KOH was necessary to attain an adequate separation of the DA and AA oxidation potential peaks. •For the first time in the literature, the use of an a-CN{sub x} electrode in a complete electroanalytical procedure is reported. -- Abstract: Boron-doped diamond (BDD) films are excellent electrode materials, whose electrochemical activity for some analytes can be tuned by controlling their surface termination, most commonly either to predominantly hydrogen or oxygen. This tuning can be accomplished by e.g. suitable cathodic or anodic electrochemical pretreatments. Recently, it has been shown that amorphous carbon nitride (a-CN{sub x}) films may present electrochemical characteristics similar to those of BDD, including the influence of surface termination on their electrochemical activity toward some analytes. In this work, we report for the first time a complete electroanalytical method using an a-CN{sub x} electrode. Thus, an a-CN{sub x} film deposited on a stainless steel foil by DC magnetron sputtering is proposed as an alternative electrode for the simultaneous determination of dopamine (DA) and ascorbic acid (AA) in synthetic biological samples by square-wave voltammetry. The obtained results are compared with those attained using a BDD electrode. For both electrodes, a same anodic pretreatment in 0.1 mol L{sup −1} KOH was necessary to attain an adequate and equivalent separation of the DA and AA oxidation potential peaks of about 330 mV. The detection limits obtained for the simultaneous determination of these analytes using the a-CN{sub x

  17. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiNx/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  18. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Da; Kunz, Thomas [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Wolf, Nadine [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Energy Efficiency, Am Galgenberg 87, 97074 Wuerzburg (Germany); Liebig, Jan Philipp [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Göken, Mathias [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Brabec, Christoph J. [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Institute of Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen (Germany)

    2015-05-29

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm{sup 2} aperture area on the graphite substrate. The optical properties of the SiN{sub x}/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN{sub x}/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN{sub x}/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance.

  19. Carbon Nitride-Aromatic Diimide-Graphene Nanohybrids: Metal-Free Photocatalysts for Solar-to-Hydrogen Peroxide Energy Conversion with 0.2% Efficiency.

    Science.gov (United States)

    Kofuji, Yusuke; Isobe, Yuki; Shiraishi, Yasuhiro; Sakamoto, Hirokatsu; Tanaka, Shunsuke; Ichikawa, Satoshi; Hirai, Takayuki

    2016-08-10

    Solar-to-chemical energy conversion is a challenging subject for renewable energy storage. In the past 40 years, overall water splitting into H2 and O2 by semiconductor photocatalysis has been studied extensively; however, they need noble metals and extreme care to avoid explosion of the mixed gases. Here we report that generating hydrogen peroxide (H2O2) from water and O2 by organic semiconductor photocatalysts could provide a new basis for clean energy storage without metal and explosion risk. We found that carbon nitride-aromatic diimide-graphene nanohybrids prepared by simple hydrothermal-calcination procedure produce H2O2 from pure water and O2 under visible light (λ > 420 nm). Photoexcitation of the semiconducting carbon nitride-aromatic diimide moiety transfers their conduction band electrons to graphene and enhances charge separation. The valence band holes on the semiconducting moiety oxidize water, while the electrons on the graphene moiety promote selective two-electron reduction of O2. This metal-free system produces H2O2 with solar-to-chemical energy conversion efficiency 0.20%, comparable to the highest levels achieved by powdered water-splitting photocatalysts. PMID:27439985

  20. Self-assembly graphitic carbon nitride quantum dots anchored on TiO2 nanotube arrays: An efficient heterojunction for pollutants degradation under solar light.

    Science.gov (United States)

    Su, Jingyang; Zhu, Lin; Geng, Ping; Chen, Guohua

    2016-10-01

    In this study, an efficient heterojunction was constructed by anchoring graphitic carbon nitride quantum dots onto TiO2 nanotube arrays through hydrothermal reaction strategy. The prepared graphitic carbon nitride quantum dots, which were prepared by solid-thermal reaction and sequential dialysis process, act as a sensitizer to enhance light absorption. Furthermore, it was demonstrated that the charge transfer and separation in the formed heterojunction were significantly improved compared with pristine TiO2. The prepared heterojunction was used as a photoanode, exhibiting much improved photoelectrochemical capability and excellent photo-stability under solar light illumination. The photoelectrocatalytic activities of prepared heterojunction were demonstrated by degradation of RhB and phenol in aqueous solution. The kinetic constants of RhB and phenol degradation using prepared photoelectrode are 2.4 times and 4.9 times higher than those of pristine TiO2, respectively. Moreover, hydroxyl radicals are demonstrated to be dominant active radicals during the pollutants degradation. PMID:27232727

  1. Remarkable enhancement of the electrical conductivity of carbon nanostructured thin films after compression

    Science.gov (United States)

    Georgakilas, Vasilios; Koutsioukis, Apostolos; Petr, Martin; Tucek, Jiri; Zboril, Radek

    2016-06-01

    In this work, we demonstrate a significant improvement in the electrical conductivity of carbon nanostructured thin films, composed of graphene nanosheets and multiwalled carbon nanotubes, by compression/polishing. It is shown that the sheet resistance of compressed thin films of carbon nanostructures and hybrids is remarkably decreased in comparison with that of as-deposited films. The number of the interconnections, the distance between the nanostructures as well as their orientation are highly altered by the compression favoring the electrical conductivity of the compressed samples.In this work, we demonstrate a significant improvement in the electrical conductivity of carbon nanostructured thin films, composed of graphene nanosheets and multiwalled carbon nanotubes, by compression/polishing. It is shown that the sheet resistance of compressed thin films of carbon nanostructures and hybrids is remarkably decreased in comparison with that of as-deposited films. The number of the interconnections, the distance between the nanostructures as well as their orientation are highly altered by the compression favoring the electrical conductivity of the compressed samples. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09025c

  2. Humidity Sensor Based on Multi-Walled Carbon Nanotube Thin Films

    OpenAIRE

    Cao, C. L.; Hu, C. G.; Fang, L.; Wang, S. X.; Y. S. TIAN; Pan, C. Y.

    2011-01-01

    The properties of the humidity sensors made of chemically treated and untreated multi-walled carbon nanotube (MWCNT) thin films are investigated systematically. It shows that both the chemically treated and untreated MWCNT thin films demonstrate humidity sensitive properties, but the former have stronger sensitivity than the latter. In the range of 11%–98% relative humidity (RH), the resistances of the chemically treated and untreated MWCNT humidity sensors increase 120% and 28%, respectively...

  3. Complexes of carbon nanotubes with oligonucleotides in thin Langmuir-Blodgett films to detect electrochemically hybridization

    Science.gov (United States)

    Egorov, A. S.; Egorova, V. P.; Krylova, H. V.; Lipnevich, I. V.; Orekhovskaya, T. I.; Veligura, A. A.; Govorov, M. I.; Shulitsky, B. G.

    2014-10-01

    Self-assembled complexes consisting of thin multi-walled carbon nanotubes (MWCNTs) and DNA-oligonucleotides which are able to a cooperative binding to complementary oligonucleotides have been investigated. It was establised a high-performance charge transport in nanostructured Langmuir-Blodgett complexes thin MWCNTs/DNA. A method to electrochemically detect DNA hybridization on the self-organized structures has been proposed.

  4. Role of interfacial carbon layer in the thermal diffusivity/conductivity of silicon carbide fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Hemanshu; Donaldson, Kimberly Y.; Hasselman, D. P. H.; Bhatt, Ramakrishna T.

    1992-01-01

    Experiments were carried out on samples of reaction-bonded silicon nitride uniaxially reinforced by SiC monofilaments with and without a 3-micron-thick carbon-rich coating. It is found that a combination of a carbon coatings on the fibers and an interfacial gap due to the thermal expansion mismatch in the composite can significantly (by a factor of 2) lower the effective thermal diffusivity in the direction transverse to the fiber. At atmospheric pressure, gaseous conduction across the interfacial gap makes a significant contribution to the heat transfer across the interface, indicated by significantly lower values of the effective thermal diffusivity under vacuum than in nitrogen or helium at atmospheric pressure.

  5. Assessment of wall-thinning in carbon steel pipe by using laser-generated guided wave

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do Yong; Cho, Youn Ho; Lee, Joon Hyun [Pusan National University, School of Mechanical Engineering, Busan (Korea, Republic of)

    2010-10-15

    The objective of this research is to estimate the crack location and size of a carbon steel pipe by using a laser ultrasound guided wave for the wall thinning evaluation of an elbow. The wall thinning of the carbon steel pipe is one of the most serious problems in nuclear power plants, especially the wall thinning of the carbon steel elbow caused by Flow-Accelerated Corrosion (FAC). Therefore, a non-destructive inspection method of elbow is essential for the nuclear power plants to operate safely. The specimens used in this study were carbon steel elbows, which represented the main elements of real nuclear power plants. The shape of the wall thinning was an oval with a width of 120mm, a length of 80mm, and a depth of 5mm. The L(0,1) and L(0,2) modes variation of the ultrasound guided wave signal is obtained from the response of the laser generation/air-coupled detection ultrasonic hybrid system represent the characteristics of the defect. The trends of these characteristics and signal processing were use dto estimate the size and location of wall thinning

  6. Optimum design of the carbon fiber thin-walled baffle for the space-based camera

    Science.gov (United States)

    Yan, Yong; Song, Gu; Yuan, An; Jin, Guang

    2011-08-01

    The thin-walled baffle design of the space-based camera is an important job in the lightweight space camera research task for its stringent quality requirement and harsh mechanical environment especially for the thin-walled baffle of the carbon fiber design. In the paper, an especially thin-walled baffle of the carbon fiber design process was described and it is sound significant during the other thin-walled baffle design of the space camera. The designer obtained the design margin of the thin-walled baffle that structural stiffness and strength can tolerated belong to its development requirements through the appropriate use of the finite element analysis of the walled parameters influence sensitivity to its structural stiffness and strength. And the designer can determine the better optimization criterion of thin-walled baffle during the geometric parameter optimization process in such guiding principle. It sounds significant during the optimum design of the thin-walled baffle of the space camera. For structural stiffness and strength of the carbon fibers structure which can been designed, the effect of the optimization will be more remarkable though the optional design of the parameters chose. Combination of manufacture process and design requirements the paper completed the thin-walled baffle structure scheme selection and optimized the specific carbon fiber fabrication technology though the FEM optimization, and the processing cost and process cycle are retrenchment/saved effectively in the method. Meanwhile, the weight of the thin-walled baffle reduced significantly in meet the design requirements under the premise of the structure. The engineering prediction had been adopted, and the related result shows that the thin-walled baffle satisfied the space-based camera engineering practical needs very well, its quality reduced about 20%, the final assessment index of the thin-walled baffle were superior to the overall design requirements significantly. The design

  7. Visible photoluminescence from ZnO/diamond-like carbon thin films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-chun; LI Qing-shan; DONG Yan-feng; MA Zi-xia

    2012-01-01

    ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD) on Si (111) wafer.Visible room-temperature photoluminescence (PL) is observed from ZnO/DLC thin films by fluorescence spectrophotometer.The Gaussian curve fitting of PL spectra reveals that the broadband visible emission contains three components with λ=508 nm,554 nm and 698 nm.The origin and possible mechanism of the visible PL are discussed,and they can be attributed to the PL recombination of ZnO and DLC thin films.

  8. Methods of making non-covalently bonded carbon-titania nanocomposite thin films and applications of the same

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yu Teng; Vijayan, Baiju K.; Gray, Kimberly A.; Hersam, Mark C.

    2016-07-19

    In one aspect, a method of making non-covalently bonded carbon-titania nanocomposite thin films includes: forming a carbon-based ink; forming a titania (TiO.sub.2) solution; blade-coating a mechanical mixture of the carbon-based ink and the titania solution onto a substrate; and annealing the blade-coated substrate at a first temperature for a first period of time to obtain the carbon-based titania nanocomposite thin films. In certain embodiments, the carbon-based titania nanocomposite thin films may include solvent-exfoliated graphene titania (SEG-TiO.sub.2) nanocomposite thin films, or single walled carbon nanotube titania (SWCNT-TiO.sub.2) nanocomposite thin films.

  9. Thin film transistors of single-walled carbon nanotubes grown directly on glass substrates

    International Nuclear Information System (INIS)

    We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 μm-2, which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics

  10. Hot pressing aluminum nitride

    International Nuclear Information System (INIS)

    Experiment was performed on the hot pressing of aluminum nitride, using three kinds of powder which are: a) made by electric arc method, b) made by nitrifying aluminum metal powder, and c) made from alumina and carbon in nitrogen atmosphere. The content of oxygen of these powders was analyzed by activation analysis using high energy neutron irradiation. The density of hot pressed samples was classified into two groups. The high density group contained oxygen more than 3 wt. %, and the low density group contained about 0.5 wt %. Typical density vs. temperature curves have a bending point near 1,5500C, and the sample contains iron impurity of 0.5 wt. %. Needle crystals were found to grow near 1,5500C by VLS mechanism, and molten iron acts a main part of mechanism as a liquid phase. According to the above-mentioned curve, the iron impurity in aluminum nitride prevents densification. The iron impurity accelerates crystal growth. Advance of densification may be expected by adding iron impurity, but in real case, the densification is delayed. Densification and crystal growth are greatly accelerated by oxygen impurity. In conclusion, more efforts must be made for the purification of aluminum nitride. In the present stage, the most pure nitride powder contains about 0.1 wt. % of oxygen, as compared with good silicon carbide crystals containing only 10-5 wt. % of nitrogen. (Iwakiri, K.)

  11. Physical properties of chemical vapour deposited nanostructured carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India); Rajpure, K.Y., E-mail: rajpure@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India)

    2011-02-03

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C{sub 10}H{sub 16})' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp{sup 3} bonds with diamond phase and less for SS shows graphitization effect with dominant sp{sup 2} bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  12. Carbon nanotube network thin-film transistors on flexible/stretchable substrates

    Science.gov (United States)

    Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

    2016-03-29

    This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

  13. Nano-structural Modification of Amorphous Carbon Thin Films by Low-energy Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    EijiIwamura; MasanoriYamaguchi

    2004-01-01

    A new approach using a low-energy electron beam radiation system was investigated to synthesize carbon hybrid structures in amorphous carbon thin films. Two types of amorphous carbon films, which were 15at% iron containing film and with column/inter-column structures, were deposited onto Si substrates by a sputtering technique and subsequently exposed to an electron shower of which the energy and dose rate were much smaller compared to an intense electron beam used in a transmission electron microscopy. As a result of the low-energy and low-dose electron irradiation process, graphitic structures formed in amorphous matrix at a relatively low temperature up to 450 K. Hybrid carbon thin films containing onion-like structures in an amorphous carbon matrix were synthesized by dynamic structural modification of iron containing amorphous carbon thin films. It was found that the graphitization progressed more in the electron irradiation than in annealing at 773K, and it was attributed to thermal and catalytic effects which are strongly related to grain growth of metal clusters. On the other hand, a reversal of TEM image contrast was observed in a-C films with column/inter-column structures. It is presumed that preferable graphitization occurred in the inter-column regions induced by electron irradiation.

  14. Nano-structural Modification of Amorphous Carbon Thin Films by Low-energy Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    Eiji Iwamura; Masanori Yamaguchi

    2004-01-01

    A new approach using a low-energy electron beam radiation system was investigated to synthesize carbon hybrid structures in amorphous carbon thin films. Two types of amorphous carbon films, which were 15at% iron containing film and with column/inter-column structures, were deposited onto Si substrates by a sputtering technique and subsequently exposed to an electron shower of which the energy and dose rate were much smaller compared to an intense electron beam used in a transmission electron microscopy. As a result of the low-energy and low-dose electron irradiation process,graphitic structures formed in amorphous matrix at a relatively low temperature up to 450 K. Hybrid carbon thin films containing onion-like structures in an amorphous carbon matrix were synthesized by dynamic structural modification of iron containing amorphous carbon thin films. It was found that the graphitization progressed more in the electron irradiation than in annealing at 773K, and it was attributed to thermal and catalytic effects which are strongly related to grain growth of metal clusters. On the other hand, a reversal of TEM image contrast was observed in a-C films with column/inter-column structures. It is presumed that preferable graphitization occurred in the inter-column regions induced by electron irradiation.

  15. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  16. Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

    NARCIS (Netherlands)

    Tiggelaar, R.M.; Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K.; Gardeniers, J.G.E.

    2013-01-01

    Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films

  17. Thin sulfonated poly(ether ether ketone) films for the dehydration of compressed carbon dioxide

    NARCIS (Netherlands)

    Koziara, B.T.

    2015-01-01

    In this thesis, the properties of thin films from highly sulfonated poly(ether ether ketone) (SPEEK) have been investigated within the context of their application as membranes for the dehydration of compressed carbon dioxide. Spectroscopic ellipsometry has been used as the predominant measurement t

  18. In situ optical spectroelectrochemistry of single-walled carbon nanotube thin films

    Czech Academy of Sciences Publication Activity Database

    Zukalová, Markéta; Tarábek, Ján; Kalbáč, Martin; Kavan, Ladislav; Dunsch, L.

    2008-01-01

    Roč. 12, č. 10 (2008), s. 1279-1284. ISSN 1432-8488 R&D Projects: GA MŠk LC510 Institutional research plan: CEZ:AV0Z40400503 Keywords : uv-vis spectroelectrochemistry * cyclic voltammetry * single-walled carbon nanotubes * thin film s * doping Subject RIV: CG - Electrochemistry Impact factor: 1.597, year: 2008

  19. Detection of wall thinning of carbon steel pipe covered with insulation using Pulsed Eddy Current technique

    International Nuclear Information System (INIS)

    The test sample is a ferromagnetic carbon steel pipe having different thickness, covered with a 10 cm plastic insulation laminated by 0.4 mm Al plate to simulate the pipelines in NPPs. The PEC Probe used for the wall thinning detection consists of an excitation coil and a Hall sensor. The excitation coils in the probe is driven by a rectangular bipolar current pulse and the Hall-sensor will detects the resultant field. The Hall sensor output is considered as PEC signal. Results shows that the PEC system can detect wall thinning in an insulated pipeline of the NPPs. Local wall thinning in pipelines affects the structural integrity of industries like nuclear power plants (NPPs). In the present study a pulsed eddy current (PEC) technology to detect the wall thing of carbon steel pipe covered with insulation is developed

  20. Permeability of Ultra-Thin Amorphous Carbon Films

    Directory of Open Access Journals (Sweden)

    Bubenchikov Mikhail A.

    2016-01-01

    Full Text Available The present paper deals with defining the energy of interaction between an ultra-thin hydrocarbon layer and helium molecules using a modification of the LJ-potential and the continual approach. The suggested approach allows determination of the statistically average motion of a test molecule through material layers under consideration. The obtained results made it possible to localize global sorption zones both inside the layer and at its external borders and to identify the parameters which are responsible for permeability of the layer.

  1. Thin film Li-Ion batteries with carbon anode

    Czech Academy of Sciences Publication Activity Database

    Merta, J.; Bludská, Jana; Jakubec, Ivo

    Brno: University of Technology Brno, 2003, s. 37-40. ISBN 80-214-2298-X. [Advanced Batteries and Accumulators /4./. Brno (CZ), 15.06.2003-19.06.2003] Institutional research plan: CEZ:AV0Z4032918 Keywords : carbon anode Subject RIV: CA - Inorganic Chemistry

  2. Transmission of fast H3+ molecules through thin carbon foils

    International Nuclear Information System (INIS)

    Observed for the first time is the transmission of H3+ molecules (2.4 MeV) through carbon foils (2 - 7μg/cm2). The thickness dependence of the yield follows a single decreasing exponential function with a unity coefficient which is expected for H3+ transmitted with their original electrons

  3. Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

    Science.gov (United States)

    Tomcik, B.

    2010-07-01

    Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism

  4. Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

    International Nuclear Information System (INIS)

    We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film

  5. Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Lan, Yung-Hsiang; Brahma, Sanjaya [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Tzeng, Y.H. [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Ting, Jyh-Ming, E-mail: jting@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan (China)

    2014-10-15

    We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film.

  6. Structural, electronic and magnetic properties of 3d transition metals embedded graphene-like carbon nitride sheet: A DFT + U study

    Science.gov (United States)

    Zhang, Shuai; Chi, Runze; Li, Chong; Jia, Yu

    2016-03-01

    Using first-principles calculations, we have investigated the structural, electronic and magnetic properties of 3d transition-metals (TMs) embedded two dimensional graphene-like carbon nitride sheet (TMs@g-CN). Our results show that TMs embed in the cavity of g-CN sheet regularly and keep intact of the planar structure, though there is Jahn-Teller distortion inevitably. Additionally, the nonmagnetic and semiconducting sheet can be significantly modulated to be magnetic and metallic behaviors induced by the resonant impurity states between TMs 3d and g-CN 2p orbitals. Moreover, we also explore the magnetic coupling of TMs@g-CN and find that it varies dramatically with the change of the distance between TMs, i.e., from ferromagnetic (FM) to antiferromagnetic (AFM) transition. Finally, the underlying physical mechanism of the above findings is discussed.

  7. Implementation of Carbon Thin Film Coatings in the Super Proton Synchrotron (SPS) for Electron Cloud Mitigation

    CERN Document Server

    Costa Pinto, P; Basso, T; Edwards, P; Mensi, M; Sublet, A; Taborelli, M

    2014-01-01

    Low Secondary Electron Yield (SEY) carbon thin films eradicate electron multipacting in accelerator beam pipes. Two magnetic cells of the SPS were coated with such material and installed. In total more than forty vacuum vessels and magnet interconnections were treated. The feasibility of the coating process was validated. The performance of the carbon thin film will be tested with LHC nominal beams after the end of the long shutdown 1. Particular attention will be drawn to the long term behaviour. This paper presents the sputtering techniques used to coat the different components; their characterization (SEY measurements on coupons, RF multipacting tests and pump down curves); and the technology to etch the carbon film in case of a faulty coating. The strategy to coat the entire SPS will also be described.

  8. Synthesis and characterization of carbon nanotube reinforced copper thin films

    OpenAIRE

    Otto, Cornelia

    2006-01-01

    Two model composites of copper and carbon nanotubes were fabricated by very different deposition methods. Copper electrodeposition in a plating bath containing nanotubes created a 3D matrix of randomly oriented CNTs within a thick, 20 micron Cu film. In contrast, sandwiching a layer of well-separated nanotubes between two sub-micron sputtered Cu layers produced a 2D-composite with nanotubes lying parallel to the substrate surface. These composites, which were mechanically tested using var...

  9. Selective Etching of Thin Single-Walled Carbon Nanotubes

    Czech Academy of Sciences Publication Activity Database

    Kalbáč, Martin; Kavan, Ladislav; Dunsch, L.

    2009-01-01

    Roč. 131, č. 12 (2009), s. 4529-4534. ISSN 0002-7863 R&D Projects: GA AV ČR IAA400400804; GA ČR GC203/07/J067; GA AV ČR IAA400400911 Institutional research plan: CEZ:AV0Z40400503 Keywords : carbon nanotubes * Raman spectroelectrochemistry * Raman spectroscopy Subject RIV: CG - Electrochemistry Impact factor: 8.580, year: 2009

  10. Solar-Driven Reduction of Aqueous Protons Coupled to Selective Alcohol Oxidation with a Carbon Nitride-Molecular Ni Catalyst System.

    Science.gov (United States)

    Kasap, Hatice; Caputo, Christine A; Martindale, Benjamin C M; Godin, Robert; Lau, Vincent Wing-Hei; Lotsch, Bettina V; Durrant, James R; Reisner, Erwin

    2016-07-27

    Solar water-splitting represents an important strategy toward production of the storable and renewable fuel hydrogen. The water oxidation half-reaction typically proceeds with poor efficiency and produces the unprofitable and often damaging product, O2. Herein, we demonstrate an alternative approach and couple solar H2 generation with value-added organic substrate oxidation. Solar irradiation of a cyanamide surface-functionalized melon-type carbon nitride ((NCN)CNx) and a molecular nickel(II) bis(diphosphine) H2-evolution catalyst (NiP) enabled the production of H2 with concomitant selective oxidation of benzylic alcohols to aldehydes in high yield under purely aqueous conditions, at room temperature and ambient pressure. This one-pot system maintained its activity over 24 h, generating products in 1:1 stoichiometry, separated in the gas and solution phases. The (NCN)CNx-NiP system showed an activity of 763 μmol (g CNx)(-1) h(-1) toward H2 and aldehyde production, a Ni-based turnover frequency of 76 h(-1), and an external quantum efficiency of 15% (λ = 360 ± 10 nm). This precious metal-free and nontoxic photocatalytic system displays better performance than an analogous system containing platinum instead of NiP. Transient absorption spectroscopy revealed that the photoactivity of (NCN)CNx is due to efficient substrate oxidation of the material, which outweighs possible charge recombination compared to the nonfunctionalized melon-type carbon nitride. Photoexcited (NCN)CNx in the presence of an organic substrate can accumulate ultralong-lived "trapped electrons", which allow for fuel generation in the dark. The artificial photosynthetic system thereby catalyzes a closed redox cycle showing 100% atom economy and generates two value-added products, a solar chemical, and solar fuel. PMID:27337491

  11. Covalently bonded disordered thin-film materials. Materials Research Society symposium proceedings Volume 498

    International Nuclear Information System (INIS)

    The current and potential impact of covalently bonded disordered thin films is enormous. These materials are amorphous-to-nanocrystalline structures made from light atomic weight elements from the first row of the periodic table. Examples include amorphous tetrahedral diamond-like carbon, boron nitride, carbon nitride, boron carbide, and boron-carbon-nitride. These materials are under development for use as novel low-power, high-visibility elements in flat-panel display technologies, cold-cathode sources for microsensors and vacuum microelectronics, encapsulants for both environmental protection and microelectronics, optical coatings for laser windows, and ultra-hard tribological coatings. researchers from 17 countries and a broad range of academic institutions, national laboratories and industrial organizations come together in this volume to report on the status of key areas and recent discoveries. More specifically, the volume is organized into five sections. The first four highlight ongoing work primarily in the area of amorphous/nanocrystalline (disordered) carbon thin films; theoretical and experimental structural characterization; electrical and optical characterizations; growth methods; and cold-cathode electron emission results. The fifth section describes the growth, characterization and application of boron- and carbon-nitride thin films

  12. Production of thin carbon stripper foils using heated-substrates in a cathodic arc deposition system

    International Nuclear Information System (INIS)

    The lifetime of carbon stripper foil can have a marked impact on the successful running of a beam line. Standard techniques for production of carbon stripper foils include evaporation of carbon (ec) and laser-pulsed ablation (Ipa). Recent work by a using Ipa has been successful in substantially increasing the lifetime of a very thin foil. The suspected mechanism for the increased lifetime of the foil is that the amorphous carbon foil is density-matched to that of graphite (around 2.26g/cc). In this work, we attempt to reproduce this result by producing carbon stripper foils with a mass-density similar to graphite using a cathodic arc deposition system. The cathodic arc is well known for the production of tetrahedral amorphous carbon: a high density, high stress form of carbon with over 90% sp3-like bonds; to reduce the density of the carbon and promote more graphitic structure, a high bias was initially attempted but this proved unsuccessful. Another method is to use a heated-substrate holder to reduce compressive stress within the deposited film. The performance of the density-matched carbon stripper foils and the implications for future production of high-quality carbon stripper foils in our laboratory will be discussed. (authors)

  13. Physical vapor deposition synthesis of tungsten monocarbide (WC) thin films on different carbon substrates

    International Nuclear Information System (INIS)

    The synthesis of tungsten monocarbide (WC) thin films has been performed by physical vapor deposition on various substrates including glassy carbon, carbon fiber sheet, carbon foam, and carbon cloth. The WC and W2C phase contents of these films have been evaluated with bulk and surface analysis techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and scanning electron microscopy. These characterization techniques were also used to determine the effects of synthesis by nonreactive and reactive sputtering. The synthesis of WC particles supported on the carbon fiber substrate has also been accomplished using the temperature programmed reaction method. Overall, the results demonstrate that the phase purity of tungsten carbides can be controlled by the deposition environment and annealing temperatures

  14. Configurable three-dimensional boron nitride-carbon architecture and its tunable electronic behavior with stable thermal performances.

    Science.gov (United States)

    Loeblein, Manuela; Tay, Roland Yingjie; Tsang, Siu Hon; Ng, Wei Beng; Teo, Edwin Hang Tong

    2014-08-13

    Recent developments of 3D-graphene and 3D-boron-nitride have become of great interest owing to their potential for ultra-light flexible electronics. Here we demonstrate the first synthesis of novel 3D-BNC hybrids. By specifically controlling the compositions of C and BN, new fascinating properties are observed, such as highly tunable electrical conductivity, controllable EMI shielding properties, and stable thermal conductivity. This ultra-light hybrid opens up many new applications such as for electronic packaging and thermal interface materials (TIMs). PMID:24789084

  15. A comparative study on carbon, boron-nitride, boron-phosphide and silicon-carbide nanotubes based on surface electrostatic potentials and average local ionization energies.

    Science.gov (United States)

    Esrafili, Mehdi D; Behzadi, Hadi

    2013-06-01

    A density functional theory study was carried out to predict the electrostatic potentials as well as average local ionization energies on both the outer and the inner surfaces of carbon, boron-nitride (BN), boron-phosphide (BP) and silicon-carbide (SiC) single-walled nanotubes. For each nanotube, the effect of tube radius on the surface potentials and calculated average local ionization energies was investigated. It is found that SiC and BN nanotubes have much stronger and more variable surface potentials than do carbon and BP nanotubes. For the SiC, BN and BP nanotubes, there are characteristic patterns of positive and negative sites on the outer lateral surfaces. On the other hand, a general feature of all of the systems studied is that stronger potentials are associated with regions of higher curvature. According to the evaluated surface electrostatic potentials, it is concluded that, for the narrowest tubes, the water solubility of BN tubes is slightly greater than that of SiC followed by carbon and BP nanotubes. PMID:23408252

  16. Piezoresistivity of mechanically drawn single-walled carbon nanotube (SWCNT) thin films-: mechanism and optimizing principle

    Science.gov (United States)

    Obitayo, Waris

    The individual carbon nanotube (CNT) based strain sensors have been found to have excellent piezoresistive properties with a reported gauge factor (GF) of up to 3000. This GF on the other hand, has been shown to be structurally dependent on the nanotubes. In contrast, to individual CNT based strain sensors, the ensemble CNT based strain sensors have very low GFs e.g. for a single walled carbon nanotube (SWCNT) thin film strain sensor, GF is ~1. As a result, studies which are mostly numerical/analytical have revealed the dependence of piezoresistivity on key parameters like concentration, orientation, length and diameter, aspect ratio, energy barrier height and Poisson ratio of polymer matrix. The fundamental understanding of the piezoresistive mechanism in an ensemble CNT based strain sensor still remains unclear, largely due to discrepancies in the outcomes of these numerical studies. Besides, there have been little or no experimental confirmation of these studies. The goal of my PhD is to study the mechanism and the optimizing principle of a SWCNT thin film strain sensor and provide experimental validation of the numerical/analytical investigations. The dependence of the piezoresistivity on key parameters like orientation, network density, bundle diameter (effective tunneling area), and length is studied, and how one can effectively optimize the piezoresistive behavior of a SWCNT thin film strain sensors. To reach this goal, my first research accomplishment involves the study of orientation of SWCNTs and its effect on the piezoresistivity of mechanically drawn SWCNT thin film based piezoresistive sensors. Using polarized Raman spectroscopy analysis and coupled electrical-mechanical test, a quantitative relationship between the strain sensitivity and SWCNT alignment order parameter was established. As compared to randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~6x increase on the GF. My second accomplishment involves studying the

  17. Rhodium thin film-carbon nanotube nanostructures: Synthesis, characterization and electron transfer properties

    International Nuclear Information System (INIS)

    Rh thin films have been synthesized onto carbon nanotubes by pulsed laser deposition under vacuum and under 266 Pa of helium background pressure. Field emission scanning electron microscopy revealed two types of Rh films: (i) Rh film fabricated under vacuum was smooth and of closed structure and (ii) Rh prepared at 266 Pa of He was porous. Transmission electron microscopy showed that the smooth Rh film was made of highly interconnected particles of 2 nm diameter, whereas the porous film had a morphology of particles arranged into columns with particles having an average diameter of 5 nm. In addition, using high resolution transmission electron microscopy images, the Rh film thickness could be estimated to be about 20 nm. X-ray diffraction pattern showed well-crystallized thin films with a (111) intense orientation. X-ray photoelectron spectroscopy confirmed the presence of metallic Rh at the surface of the carbon nanotubes. Preliminary evaluation of the electron transfer properties showed that porous Rh-carbon nanotubes exhibited reduced oxophilicity than smooth Rh. In addition, the porous Rh film offered larger electrochemical stability window between the onset of hydrogen adsorption and Rh oxide formation. Such interesting properties have important implications in many electroanalytical applications. - Highlights: • Pulsed laser synthesis used to deposit rhodium thin films onto carbon nanotubes. • Smooth and porous rhodium films verified by electron microscopy analyses • Electron transfer properties studied in sulfuric acid solution

  18. A laser ultrasound transducer using carbon nanofibers–polydimethylsiloxane composite thin film

    International Nuclear Information System (INIS)

    The photoacoustic effect has been broadly applied to generate high frequency and broadband acoustic waves using lasers. However, the efficient conversion from laser energy to acoustic power is required to generate acoustic waves with high intensity acoustic pressure (>10 MPa). In this study, we demonstrated laser generated high intensity acoustic waves using carbon nanofibers–polydimethylsiloxane (CNFs-PDMS) thin films. The average diameter of the CNFs is 132.7 ± 11.2 nm. The thickness of the CNFs film and the CNFs-PDMS composite film is 24.4 ± 1.43 μm and 57.9 ± 2.80 μm, respectively. The maximum acoustic pressure is 12.15 ± 1.35 MPa using a 4.2 mJ, 532 nm Nd:YAG pulsed laser. The maximum acoustic pressure using the CNFs-PDMS composite was found to be 7.6-fold (17.62 dB) higher than using carbon black PDMS films. Furthermore, the calculated optoacoustic energy conversion efficiency K of the prepared CNFs-PDMS composite thin films is 15.6 × 10−3 Pa/(W/m2), which is significantly higher than carbon black-PDMS thin films and other reported carbon nanomaterials, carbon nanostructures, and metal thin films. The demonstrated laser generated high intensity ultrasound source can be useful in ultrasound imaging and therapy

  19. A laser ultrasound transducer using carbon nanofibers–polydimethylsiloxane composite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Hsieh, Bao-Yu; Kim, Jinwook; Li, Sibo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Zhu, Jiadeng; Zhang, Xiangwu [Fiber and Polymer Science Program, Department of Textile Engineering, Chemistry and Science, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-01-12

    The photoacoustic effect has been broadly applied to generate high frequency and broadband acoustic waves using lasers. However, the efficient conversion from laser energy to acoustic power is required to generate acoustic waves with high intensity acoustic pressure (>10 MPa). In this study, we demonstrated laser generated high intensity acoustic waves using carbon nanofibers–polydimethylsiloxane (CNFs-PDMS) thin films. The average diameter of the CNFs is 132.7 ± 11.2 nm. The thickness of the CNFs film and the CNFs-PDMS composite film is 24.4 ± 1.43 μm and 57.9 ± 2.80 μm, respectively. The maximum acoustic pressure is 12.15 ± 1.35 MPa using a 4.2 mJ, 532 nm Nd:YAG pulsed laser. The maximum acoustic pressure using the CNFs-PDMS composite was found to be 7.6-fold (17.62 dB) higher than using carbon black PDMS films. Furthermore, the calculated optoacoustic energy conversion efficiency K of the prepared CNFs-PDMS composite thin films is 15.6 × 10{sup −3 }Pa/(W/m{sup 2}), which is significantly higher than carbon black-PDMS thin films and other reported carbon nanomaterials, carbon nanostructures, and metal thin films. The demonstrated laser generated high intensity ultrasound source can be useful in ultrasound imaging and therapy.

  20. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.L. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Tang, Y.; Yang, L.; Zhang, C. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Hu, Y.; Cui, X. [Canadian Light Source Inc., 101 Perimeter Road, Saskatoon, SK S7N 0X4 (Canada)

    2015-08-31

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B{sub 4}C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B{sub 4}C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp{sup 3} bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp{sup 3} bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp{sup 3} bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films.