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Sample records for cadmium telluride thin

  1. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  2. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  3. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  4. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75 percent or higher at 0.44 microns and a photovoltaic efficiency of 11.5 percent or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65 percent and a photovoltaic conversion efficiency of 5 percent and 8 percent, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD(1-x)Zn(1-x)Te, and Hg(1-x)Zn(x)Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400 C using TEGa and AsH3 as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized.

  5. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. (University of South Florida, Tampa, FL (United States))

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  6. Structural properties of oxygenated amorphous cadmium telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    El Azhari, M.Y. [Laboratoire de Physique des Solides et des Couches Minces, Marakech (Morocco). Dept. de Physique; Azizan, M. [Laboratoire de Physique des Solides et des Couches Minces, Marakech (Morocco). Dept. de Physique; Bennouna, A. [Laboratoire de Physique des Solides et des Couches Minces, Marakech (Morocco). Dept. de Physique; Outzourhit, A. [Laboratoire de Physique des Solides et des Couches Minces, Marakech (Morocco). Dept. de Physique; Ameziane, E.L. [Laboratoire de Physique des Solides et des Couches Minces, Marakech (Morocco). Dept. de Physique; Brunel, M. [Laboratoire de Cristallographie, CNRS, Grenoble (France)

    1997-02-28

    Cadmium telluride (CdTe) thin films were prepared by diode radio-frequency sputtering from polycrystalline CdTe targets in an atmosphere of argon, nitrogen and oxygen. The layers prepared in the presence of nitrogen gas were amorphous and their oxygen contents increased with the partial pressure of nitrogen. The evolution of the composition of the layers as a function of the nitrogen partial pressure during deposition was followed by X-ray photoelectron spectroscopy. It is found that the oxygen is bound to both tellurium and cadmium atoms. The surface of the CdTe thin films was also studied as a function of their exposure time to a plasma containing a mixture of nitrogen and oxygen. It is found that the oxygen contents of the surface increases with increased exposure time. Also, this exposure resulted in an increase of the oxide thickness and a net decrease in the surface roughness of the films. (orig.)

  7. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  8. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  9. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  10. High efficiency thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Britt, J.; Chen, G.; Ferekides, C.; Schultz, N.; Wang, C.; Wu, C. Q.

    1992-12-01

    Cadmium sulfide (CdS), grown from an aqueous solution, and zinc oxide (ZnO), cadmium zinc sulfide (Cd1-xZnxS), and zinc selenide (ZnSe), deposited by metalorganic chemical vapor deposition (MOCVD), have been used as the window for thin film cadmium telluride (CdTe) solar cells. Thin film solar cells were prepared by the successive deposition of the window and p-CdTe (by MOCVD and close-spaced sublimation, CSS) on SnO2:F/glass substrates. CdS/CdTe(CSS) solar cells show considerably better characteristics than CdS/CdTe(MOCVD) solar cells because of the better microstructure of CSS CdTe films. Total area conversion efficiency of 14.6%, verified by the National Renewable Energy Laboratory, has been achieved for solar cells of about 1 cm2 area. Solar cell prepared by using ZnO, ZnSe, or Cd1-xZnxS as window have significantly lower photovoltage than CdS/CdTe solar cells.

  11. Photosensitive cadmium telluride thin-film field-effect transistors.

    Science.gov (United States)

    Yang, Gwangseok; Kim, Donghwan; Kim, Jihyun

    2016-02-22

    We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 10(9) to 5.55 × 10(7) Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.

  12. Using atomistic simulations to model cadmium telluride thin film growth

    Science.gov (United States)

    Yu, Miao; Kenny, Steven D.

    2016-03-01

    Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

  13. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    Science.gov (United States)

    Ferekides, Christos Savva

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C. The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. Their characteristics of the Cd(1-x)Zn(x)Te junctions degraded with increasing Zn concentration due to the crystalline quality and very small grain size (0.3 microns) in films with high ZnTe contents (greater than 25 percent). No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities

  14. Structure and Surface Analysis of SHI Irradiated Thin Films of Cadmium Telluride

    OpenAIRE

    Neelam Pahwa; A.D. Yadav; S.K. Dubey; A.P. Patel; Arvind Singh; D.C. Kothari

    2012-01-01

    Cadmium Telluride (CdTe) thin films grown by thermal evaporation on quartz substrates were irradiated with swift (100 MeV) Ni + 4 ions at various fluences in the range 1011 – 1013 cm – 2. The modification in structure and surface morphology has been analyzed as a function of fluence using XRD and AFM techniques. The XRD showed a reduction in peak intensity and grain size with increasing fluence. The AFM micrographs of irradiated thin films show small spherical nanostructures. In addition to d...

  15. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. [University of South Florida, Tampa, FL (United States)

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  16. Structure and Surface Analysis of SHI Irradiated Thin Films of Cadmium Telluride

    Directory of Open Access Journals (Sweden)

    Neelam Pahwa

    2012-10-01

    Full Text Available Cadmium Telluride (CdTe thin films grown by thermal evaporation on quartz substrates were irradiated with swift (100 MeV Ni + 4 ions at various fluences in the range 1011 – 1013 cm – 2. The modification in structure and surface morphology has been analyzed as a function of fluence using XRD and AFM techniques. The XRD showed a reduction in peak intensity and grain size with increasing fluence. The AFM micrographs of irradiated thin films show small spherical nanostructures. In addition to direct imaging, AFM profile data enable to derive the Power Spectral Density (PSD of the surface roughness. In the present work PSD spectra computed from AFM data were used for studying the surface morphology of films. The PSD curves were fitted with an appropriate analytic function and characteristic parameters were deduced and discussed in order to compare film morphology with varying fluence levels.

  17. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 1, April 9-July 8, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K.

    1979-08-01

    Preparation and properties of cadmium telluride thin films for use in solar cells are studied. CdTe sputter deposition, crystal doping, and carrier typing are discussed. Future experimental plans are described. (WHK)

  18. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  19. Spectroscopic ellipsometry as a process control tool for manufacturing cadmium telluride thin film photovoltaic devices

    Science.gov (United States)

    Smith, Westcott P.

    In recent decades, there has been concern regarding the sustainability of fossil fuels. One of the more promising alternatives is Cadmium Telluride (CdTe) thin-film photovoltaic (PV) devices. Improved quality measurement techniques may aid in improving this existing technology. Spectroscopic ellipsometry (SE) is a common, non-destructive technique for measuring thin films in the silicon wafer industry. SE results have also been tied to properties believed to play a role in CdTe PV device efficiency. A study assessing the potential of SE for use as a quality measurement tool had not been previously reported. Samples of CdTe devices produced by both laboratory and industrial scale processes were measured by SE and Scanning Electron Microscopy (SEM). Mathematical models of the optical characteristics of the devices were developed and fit to SE data from multiple angles and locations on each sample. Basic statistical analysis was performed on results from the automated fits to provide an initial evaluation of SE as a quantitative quality measurement process. In all cases studied, automated SE models produced average stack thickness values within 10% of the values produced by SEM, and standard deviations for the top bulk layer thickness were less than 1% of the average values.

  20. Properties of Te-rich cadmium telluride thin films fabricated by closed space sublimation technique

    Science.gov (United States)

    Abbas Shah, N.; Ali, A.; Ali, Z.; Maqsood, A.; Aqili, A. K. S.

    2005-11-01

    Cadmium telluride (CdTe) thin films were prepared by the closed space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the same procedure was adopted by using tellurium as evaporant and already deposited CdTe film as substrate. Such compositions were then annealed at 300 °C for 30 min to obtain Te-enriched films. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometry, DC electrical resistivity, dark conductivity and activation energy analysis as a function of temperature by two-probe method. The electron microprobe analyzer (EMPA) results showed an increase of Te content composition in the samples as the mass of the Te-deposition increased in CdTe. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by addition of tellurium. A significant change in the shape and size of the CdTe grains were observed.

  1. Band gap engineering of zinc selenide thin films through alloying with cadmium telluride.

    Science.gov (United States)

    Al-Kuhaili, M F; Kayani, A; Durrani, S M A; Bakhtiari, I A; Haider, M B

    2013-06-12

    This work investigates band gap engineering of zinc selenide (ZnSe) thin films. This was achieved by mixing ZnSe with cadmium telluride (CdTe). The mass ratio (x) of CdTe in the starting material was varied in the range x = 0-0.333. The films were prepared using thermal evaporation. The chemical composition of the films was investigated through energy dispersive spectroscopy and Rutherford backscattering spectrometry. Structural analysis was carried out using X-ray diffraction and atomic force microscopy. Normal incidence transmittance and reflectance were measured over the wavelength range 300-1300 nm. The absorption coefficients and band gaps were determined from these spectrophotometric measurements. The band gap monotonically decreased from 2.58 eV (for x = 0) to 1.75 eV (for x = 0.333). Photocurrent measurements indicated that the maximum current density was obtained for films with x = 0.286. A figure of merit, based on crystallinity, band gap, and photocurrent, was defined. The optimum characteristics were obtained for the films with x = 0.231, for which the band gap was 2.14 eV.

  2. Thin-film cadmium telluride photovoltaic cells. Final subcontract report, 1 November 1992--1 January 1994

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Bohn, R.G. [Toledo Univ., OH (United States)

    1994-09-01

    This report describes work to develop and optimize radio-frequency (rf) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by rf sputtering was studied as a function of substrate temperature, gas pressure, and rf power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

  3. Structural and Optical Properties of Sputtered Cadmium Telluride Thin Films Deposited on Flexible Substrates for Photovoltaic Applications.

    Science.gov (United States)

    Song, Woochang; Lee, Kiwon; Kim, Donguk; Lee, Jaehyeong

    2016-05-01

    Cadmium telluride (CdTe) is a photovoltaic technology based on the use of thin films of CdTe to absorb and convert sunlight into electricity. In this paper, polycrystalline CdTe thin films were deposited using radio frequency magnetron sputtering onto flexible substrates including polyimide and molybdenum foil. The structural and optical properties of the films grown at various sputtering pressures were investigated using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Nis/NIR spectrophotometry. The sputtering pressure was found to have significant effects on the structural properties, including crystallinity, preferential orientation, and microstructure. Deterioration of the optical properties of CdTe thin films were observed at high sputtering pressure.

  4. OPTIMUM STOICHIOMETRY OF CADMIUM ZINC TELLURIDE THIN FILMS IN THE LIGHT OF OPTICAL, STRUCTURAL AND PHOTON GENERATED GAIN STUDIES

    Directory of Open Access Journals (Sweden)

    Dr. MONISHA CHAKRABORTY

    2011-05-01

    Full Text Available Cadmium Zinc Telluride (Cd1-xZnxTe is a potential material for high energy imaging devices. Proper methods are adopted in this work to fabricate large area device grade Cd1-xZnxTe thin films for ‘x’ varying from 0.0567 to 0.2210. Large work function Nickel (Ni is the contact points on these films. The fabricated films are subjected to optical characterization, structural characterization and photon generated gain studies. Properties of fabricated films are found to vary with ‘x’. Photon generated gains of Ni-Cd1-xZnxTe structures are obtained. The present paper dealt with the estimation of optimum ‘x’ in Cd1-xZnxTe thin films in the light of optical, structural and photon generated gain studies.

  5. Prospects of novel front and back contacts for high efficiency cadmium telluride thin film solar cells from numerical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Matin, M.A. [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical and Electronics Engineering, Chittagong University of Engineering and Technology (CUET), Chittagong (Bangladesh); Mannir Aliyu, M.; Quadery, Abrar H. [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, Nowshad [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM), College of Engineering, King Saud University, Riyadh 11421 (Saudi Arabia)

    2010-09-15

    Cadmium telluride (CdTe) thin film solar cell has long been recognized as a leading photovoltaic candidate for its high efficiency and low cost. A numerical simulation has been performed using AMPS-1D simulator to explore the possibility of higher efficiency and stable CdS/CdTe cell among several cell structures with indium tin oxide (ITO) and cadmium stannate (Cd{sub 2}SnO{sub 4}) as front contact material, tin oxide (SnO{sub 2}), zinc oxide (ZnO) and zinc stannate (Zn{sub 2}SnO{sub 4}) as buffer layer, and silver (Ag) or antimony telluride (Sb{sub 2}Te{sub 3}) with molybdenum (Mo) or zinc telluride (ZnTe) with aluminium (Al) as back contact material. The cell structure ITO/i-ZnO/CdS/CdS{sub x}Te{sub 1-x}/CdTe/Ag has shown the best conversion efficiency of 16.9% (Voc=0.9 V, Jsc=26.35 mA/cm{sup 2}, FF=0.783). This analysis has shown that ITO as front contact material, ZnO as buffer layer and ZnTe or Sb{sub 2}Te{sub 3} back surface reflector (BSR) are suitable material system for high efficiency (>15%) and stable CdS/CdTe cells. The cell normalized efficiency linearly decreased at a temperature gradient of -0.25%/ C for ZnTe based cells, and at -0.40%/ C for other cells. (author)

  6. Controlled cadmium telluride thin films for solar-cell applications. Final technical report, June 1, 1980-May 31, 1981

    Energy Technology Data Exchange (ETDEWEB)

    Das, M.B.; Krishnaswamy, S.V.

    1981-06-01

    The objectives of this contract were to carry out a systematic study on the preparation and characterization of rf-sputtered CdTe thin films in order to establish reproducibility of the films with good electrical characteristics and to demonstrate the feasibility of fabricating various types of junctions and ohmic contacts with reproducible characteristics and finally to optimize the most promising solar cell structure in order to achieve an efficiency of 6% or higher. Efforts have been directed to the control of various sputtering parameters in order to obtain good quality films. The structure, crystallographic, compositional and electrical properties of cadmium telluride films sputtered over a wide range of conditions have been evaluated. A series of doping experiments have been carried out using primarily Cd, Te, In, as the n-type dopants and Cu as the p-type dopant. Of these dopants, indium doping provided films with which S.B. junctions can be obtained for further electrical characterization. Use of cadmium overpressure during CdTe:In sputtering has improved the film characteristics. Ion Beam Sputtering was attempted as an alternative technique for film preparation. For lack of time and due to a number of mechanical failures, no significant results could be obtained.

  7. Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique

    Science.gov (United States)

    Abbas Shah, N.; Ali, A.; Aqili, A. K. S.; Maqsood, A.

    2006-05-01

    Cadmium telluride (CdTe) thin films were prepared by the closed-space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the annealed films at 450 °C for 30 min were dipped in AgNO 3-H 2O solution at room temperature. These films were again annealed at 450 °C for 1 h to obtain silver-doped samples. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrically i.e. DC electrical resistivity as well as photo resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum, and spectrophotometry. The electron microprobe analyzer (EMPA) results showed an increase of Ag content composition in the samples by increasing the immersion time of films in solution. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by doping of Ag. A significant change in the shape and size of the CdTe grains were observed.

  8. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL(-1)), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL(-1)). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Cadmium telluride quantum dots advances and applications

    CERN Document Server

    Donegan, John

    2013-01-01

    Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign

  10. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B., E-mail: gnade@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, G. R.; Allee, D. R. [Flexible Display Center, Arizona State University, Phoenix, Arizona 85284 (United States); Sastré-Hernández, J.; Contreras-Puente, G. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Mexico City 07738 (Mexico); Mendoza-Pérez, R. [Universidad Autónoma de la Ciudad de México, Mexico City 09790 (Mexico)

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  11. Intense pulsed light treatment of cadmium telluride nanoparticle-based thin films.

    Science.gov (United States)

    Dharmadasa, Ruvini; Lavery, Brandon; Dharmadasa, I M; Druffel, Thad

    2014-04-09

    The search for low-cost growth techniques and processing methods for semiconductor thin films continues to be a growing area of research; particularly in photovoltaics. In this study, electrochemical deposition was used to grow CdTe nanoparticulate based thin films on conducting glass substrates. After material characterization, the films were thermally sintered using a rapid thermal annealing technique called intense pulsed light (IPL). IPL is an ultrafast technique which can reduce thermal processing times down to a few minutes, thereby cutting production times and increasing throughput. The pulses of light create localized heating lasting less than 1 ms, allowing films to be processed under atmospheric conditions, avoiding the need for inert or vacuum environments. For the first time, we report the use of IPL treatment on CdTe thin films. X-ray diffraction (XRD), optical absorption spectroscopy (UV-Vis), scanning electron microscopy (SEM) and room temperature photoluminescence (PL) were used to study the effects of the IPL processing parameters on the CdTe films. The results found that optimum recrystallization and a decrease in defects occurred when pulses of light with an energy density of 21.6 J cm(-2) were applied. SEM images also show a unique feature of IPL treatment: the formation of a continuous melted layer of CdTe, removing holes and voids from a nanoparticle-based thin film.

  12. High efficiency cadmium and zinc telluride-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (USA). School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  13. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1993--19 March 1994

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J.U.; Furtak, T.E.; Williamson, D.L.; Kim, D. [Colorado School of Mines, Golden, CO (United States)

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  14. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  15. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 23 July 1990--31 October 1991

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. [Toledo Univ., OH (United States)

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  16. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 1 November 1991--31 October 1992

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, C.D.; Bohn, R.G. [Toledo Univ., OH (United States)

    1993-10-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering and laser-driven physical vapor deposition (LDPVD) for CdTe-based thin-film solar cells. Both of these techniques are vacuum-based and share several other common physical principles. However, they differ somewhat in the typical kinetic energies of Cd, Te, and S that impact on the growth surface. The values of several processing parameters-optimized with the LDPVD technique-were taken as starting values for the RF sputtering method. We completed an initial optimization of the sputtering parameters for the CdTe growth and also successfully sputtered CdS for the first time. In addition, we successfully fabricated what we believe are the first CdS/CdTe cells in which RF sputtering was used for both CdS and CdTe layers. We achieved an all-LDPVD ell with an air mass (AM) 1.5 efficiency of 10.5% and an all-RF-sputtered cell with AM 1.5 efficiency of 10.4%, as tested by NREL.

  17. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  18. Study of copper-free back contacts to thin film cadmium telluride solar cells

    Science.gov (United States)

    Viswanathan, Vijay

    The goals of this project are to study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te 3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70--100°C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te 3 contact performance will also be studied as a function of the Sb 2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O 2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

  19. Ellipsometric Analysis of Cadmium Telluride Films’ Structure

    Directory of Open Access Journals (Sweden)

    Anna Evmenova

    2015-01-01

    Full Text Available Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fact authenticates the necessity to attract a more complicated model that should include heterogeneity of films. Ellipsometric data calculation within a two-layer film model permitted to conclude that cadmium telluride films have an outer layer that consists of the three-component mixture of CdTe, cavities, and basic matter oxide. Ratio of mixture components depends on the time of deposition, that is, on the film thickness. The inner layer consists of cadmium telluride.

  20. Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

    Indian Academy of Sciences (India)

    A U Ubale; R J Dhokne; P S Chikhlikar; V S Sangawar; D K Kulkarni

    2006-04-01

    Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing agent and NH4OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be of the order of 4.11 × 103 -cm at 523 K temperature with an activation energy of ∼ 0.2 eV. The optical absorption studies show that films have direct band gap (1.41 eV).

  1. High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y. [Toledo Univ., OH (United States)

    1995-08-01

    This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

  2. Effect of Annealing On Thin Film Fabrication of Cadmium Zinc Telluride by Single-R.F. Magnetron Sputtering Unit

    Directory of Open Access Journals (Sweden)

    Dr. Monisha Chakraborty A,

    2014-01-01

    Full Text Available In this work, formation of Cd1-xZnxTe thin films under various annealing-environments, created by layer by layer deposition of individual CdTe and ZnTe targets from a Single-R.F. Magnetron Sputtering unit is investigated. Structural and optical characterization results show that Vacuum Annealing is the best suitable for the formation of better Cd1-xZnxTe XRD peaks of higher intensities in comparison to Argon or Nitrogen-Annealing, for a bi-layered deposited CdTe and ZnTe film on glass substrate. The crystallography of the Cd1-xZnxTe films formed appeared to be either Cubic or Rhombohedral type. Also, it has been noticed, that the more inert the annealing-environment is, the lesser is the heat loss by the film-substrate and this results in better fusing of the deposited particles to move more from the poly-crystalline to the mono-crystalline structure. Also higher inert environment causes more Cadmium evaporation and this consequently drives the lattice-constant and the band-gap energy of the formed Cd1-xZnxTe thin film to move from the CdTe side to the ZnTe side. The method developed here with proper annealing ambiance for Cd1-xZnxTe fabrication can be implemented in laboratories lacking in Co-Sputtering machine.

  3. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  4. Thin film growths of zinc telluride and cadmium telluride on various substrates using a novel close space sublimation reactor CSS4

    Science.gov (United States)

    Marrufo, Damian

    Thin films of CdTe have been grown on CdS in a variety of methods for use in thin film photovoltaic systems. Limits to the efficiency of CdTe/CdS solar cells have been attributed to defects in the lattice that occur between the interface of CdS and CdTe due to a lattice mismatch. A close space sublimation (CSS) reactor known as the CSS4 was designed and fabricated in UTEP to deposit complex layers of CdTe and ZnTe on top of a CdS film that is grown via chemical bath deposition in order to obtain a CdTe photovoltaic. Unfortunately, the original design and fabrication of the CSS reactor (CSS3) proved to be unreliable and only a few depositions were made. This thesis summarizes the work done to improve the reactor to turn it into a reliable piece of lab equipment that can be used to conduct graduate level research while also listing known issues that should be addressed in future modifications. A standard procedure for growths is also presented. Some early results of films and devices made with the new CSS4 reactor are also included to demonstrate the potential experiments that could be conducted and the type of results that can be expected.

  5. High efficiency cadmium telluride and zinc telluride based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1992

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  6. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A D; Bohn, R G; Contreras-Puente, G [Univ. of Toledo, OH (United States)

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  7. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    Science.gov (United States)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  8. a Cdlts Study of the Deep Levels in n- and P - Cadmium Telluride Thin Films Deposited by Hot Wall Evaporation

    Science.gov (United States)

    Ginting, Masno

    CdTe thin films, both undoped and with different dopants, have been deposited unto graphite and Corning 7059 glass substrates using a Three-Stage Hot Wall Vacuum Evaporator (TSHWVE) system. The dopants were incorporated into the CdTe thin films using a "delta doping" technique. The conductivity type of the doped CdTe thin films was determined using the hot probe method, and the film stoichiometry was determined using X-ray and Auger electron spectroscopy measurements. Schottky diodes fabricated on the CdTe thin films that were deposited on graphite substrates have been studied using Current-Voltage (I-V), Capacitance-Voltage (C-V), and Capacitance Deep Level Transient Spectroscopy (CDLTS). The conductivity type of CdTe films that were undoped and doped with Antimony (Sb), Phosphorus (P), Gold (Au), Silver (Ag), and Copper (Cu) were found to be p-type, while Indium (In) doped CdTe thin films were found to be n-type. The highest carrier concentration of the CdTe films are 1 times 10^ {16} cm^{-3} , 1 times 10^ {17} cm^{-3} , and 7.5 times 10 ^{15} cm^{ -3} for In-, Sb-, and P-doped CdTe, respectively. For the In-doped CdTe films three majority carrier trap are found with activation energies measured from the conduction band of 0.23 +/- 0.05 eV, 0.46 +/- 0.06 eV, and 0.78 +/- 0.05 eV. For the Sb-doped CdTe films three majority carrier traps are found with activation energies measured from the valence band of 0.27 +/- 0.06 eV, 0.50 +/- 0.06 eV, and 0.80 +/- 0.06 eV. For the P-doped CdTe films three majority carrier traps are found with activation energies measured from the valence band of 0.28 +/- 0.05 eV, 0.50 +/- 0.06 eV and 0.75 +/- 0.05 eV. Our capture measurements on In-, Sb-, and P-doped CdTe showed non-exponential transients, however they could be fitted very well by Pons theory, and allowed us to determine values for the trap concentration (N_{ rm T}), the trap capture rate (c _{rm n,p}) and the trap capture cross-section (sigma_{rm n,p}). However, the capture

  9. Mercury cadmium telluride (HgCdTe) passivation by advanced thin conformal Al2O3 films

    Science.gov (United States)

    Fu, Richard; Pattison, James; Chen, Andrew; Nayfeh, Osama

    2012-06-01

    HgCdTe passivation process must be performed at low temperature in order to reduce Hg depletion. Low temperature plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for thin highly conformal films to meet the demand. Room temperature PE-ALD Al2O3 film's passivation on HgCdTe has been studied. Conformal film was investigated through SEM images of the Al2O3 film deposited onto high aspect ratio features dry etched into HgCdTe. Minority carrier lifetime was measured and compared by photoconductive decay transients of HgCdTe before and after deposition. Room temperature ALD Al2O3 film increased the minority carrier lifetime of HgCdTe.

  10. Micro-Raman and UV-VIS Studies of 100 MeV Ni4+ Irradiated Cadmium Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    Neelam Pahwa

    2011-01-01

    Full Text Available CdTe thin films grown by thermal evaporation on quartz substrates were irradiated with Swift (100 MeV Ni 4 + ions for fluences in the range 1.0 × 1011 - 1.0 × 1013 cm – 2. The modification in the structure and optical properties has been studied as a function of ion fluence using Micro-Raman spectroscopy and UV-VIS spectroscopy. In Micro Raman spectrum, weak LO and TO modes of CdTe and A1 & E modes of Te were observed with blue shift which was found to increase with increase in fluence. Intensity of these modes decreased with increase in ion fluence. UV-transmission showed pronounced interference fringes, indicating a good quality of the films. The bandgap was found to increase in the range 1.4-1.75 eV with increase in fluence.

  11. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J U; Mao, D [Colorado School of Mines, Golden, CO (United States)

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  12. Optical properties of zinc telluride with cadmium telluride submonolayers

    Science.gov (United States)

    Agekyan, V. F.; Serov, A. Yu.; Filosofov, N. G.; Shtrom, I. V.; Karczewski, G.

    2016-10-01

    Reflection, luminescence, and Raman spectra of epitaxial ZnTe layers nominally incorporating double CdTe submonolayers were studied. The band of an exciton localized at the potential produced by narrow-gap planar inclusions dominated the luminescence of these heterostructures. The emission parameters of localized excitons (specifically, the ratio of integral emission intensity to localization energy) were determined, and it was found that excitons interact with longitudinal optical phonons of the layer enriched with cadmium. Giant amplification of the Stokes component resonant with the localized exciton level was observed in Raman scattering.

  13. Brief review of cadmium telluride-based photovoltaic technologies

    Science.gov (United States)

    Başol, Bülent M.; McCandless, Brian

    2014-01-01

    Cadmium telluride (CdTe) is the most commercially successful thin-film photovoltaic technology. Development of CdTe as a solar cell material dates back to the early 1980s when ˜10% efficient devices were demonstrated. Implementation of better quality glass, more transparent conductive oxides, introduction of a high-resistivity transparent film under the CdS junction-partner, higher deposition temperatures, and improved Cl-treatment, doping, and contacting approaches yielded >16% efficient cells in the early 2000s. Around the same time period, use of a photoresist plug monolithic integration process facilitated the demonstration of the first 11% efficient module. The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas and heavy metal emissions, small carbon footprint, and short energy payback times. Limited Te availability is a challenge for the growth of this technology unless Te utilization rates are greatly enhanced along with device efficiencies.

  14. The Cadmium Zinc Telluride Imager on AstroSat

    CERN Document Server

    Bhalerao, V; Vibhute, A; Pawar, P; Rao, A R; Hingar, M K; Khanna, Rakesh; Kutty, A P K; Malkar, J P; Patil, M H; Arora, Y K; Sinha, S; Priya, P; Samuel, Essy; Sreekumar, S; Vinod, P; Mithun, N P S; Vadawale, S V; Vagshette, N; Navalgund, K H; Sarma, K S; Pandiyan, R; Seetha, S; Subbarao, K

    2016-01-01

    The Cadmium Zinc Telluride Imager (CZTI) is a high energy, wide-field imaging instrument on AstroSat. CZT's namesake Cadmium Zinc Telluride detectors cover an energy range from 20 keV to > 200 keV, with 11% energy resolution at 60 keV. The coded aperture mask attains an angular resolution of 17' over a 4.6 deg x 4.6 deg (FWHM) field of view. CZTI functions as an open detector above 100 keV, continuously sensitive to GRBs and other transients in about 30% of the sky. The pixellated detectors are sensitive to polarisation above ~100 keV, with exciting possibilities for polarisation studies of transients and bright persistent sources. In this paper, we provide details of the complete CZTI instrument, detectors, coded aperture mask, mechanical and electronic configuration, as well as data and products.

  15. The Cadmium Zinc Telluride Imager on AstroSat

    Indian Academy of Sciences (India)

    V. Bhalerao; D. Bhattacharya; A. Vibhute; P. Pawar; A. R. Rao; M. K. Hingar; Rakesh Khanna; A. P. K. Kutty; J. P. Malkar; M. H. Patil; Y. K. Arora; S. Sinha; P. Priya; Essy Samuel; S. Sreekumar; P. Vinod; N. P. S. Mithun; S. V. Vadawale; N. Vagshette; K. H. Navalgund; K. S. Sarma; R. Pandiyan; S. Seetha; K. Subbarao

    2017-06-01

    The Cadmium Zinc Telluride Imager (CZTI) is a high energy, wide-field imaging instrument on AstroSat. CZTI’s namesake Cadmium Zinc Telluride detectors cover an energy range from 20 keV to >200 keV, with 11% energy resolution at 60 keV. The coded aperture mask attains an angular resolution of 17′ over a 4.6∘× 4.6∘ (FWHM) field-of-view. CZTI functions as an open detector above 100 keV, continuously sensitive to GRBs and other transients in about 30% of the sky. The pixellated detectors are sensitive to polarization above ∼100 keV, with exciting possibilities for polarization studies of transients and bright persistent sources. In this paper, we provide details of the complete CZTI instrument, detectors, coded aperture mask, mechanical and electronic configuration, as well as data and products.

  16. Gamma-ray peak shapes from cadmium zinc telluride detectors

    Energy Technology Data Exchange (ETDEWEB)

    Namboodiri, M.N.; Lavietes, A.D.; McQuaid, J.H.

    1996-09-01

    We report the results of a study of the peak shapes in the gamma spectra measured using several 5 x 5 x 5 mm{sup 3} cadmium zinc telluride (CZT) detectors. A simple parameterization involving a Gaussian and an exponential low energy tail describes the peak shapes sell. We present the variation of the parameters with gamma energy. This type of information is very useful in the analysis of complex gamma spectra consisting of many peaks.

  17. Vacancy defects in cadmium mercury telluride investigated with slow positrons

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.; Rice-Evans, P.; Smith, D.L. (Royal Holloway and Bedford New College, London (United Kingdom). Dept. of Physics); Shaw, N. (Royal Signals and Radar Establishment, Malvern (United Kingdom))

    1993-03-01

    The II-VI semiconductor cadmium mercury telluride has been studied with a low-energy positron beam. Differences in the variation of the Doppler line-shape parameter as a function of positron implantation energy have been observed for annealed and as-grown samples. A diffusion model analysis of the results indicates large changes in the defect concentration in the bulk due to the annealing. This change is attributed to the difference in mercury vacancy concentration in the samples. (author).

  18. Charge Carrier Processes in Photovoltaic Materials and Devices: Lead Sulfide Quantum Dots and Cadmium Telluride

    Science.gov (United States)

    Roland, Paul

    Charge separation, transport, and recombination represent fundamental processes for electrons and holes in semiconductor photovoltaic devices. Here, two distinct materials systems, based on lead sulfide quantum dots and on polycrystalline cadmium telluride, are investigated to advance the understanding of their fundamental nature for insights into the material science necessary to improve the technologies. Lead sulfide quantum dots QDs have been of growing interest in photovoltaics, having recently produced devices exceeding 10% conversion efficiency. Carrier transport via hopping through the quantum dot thin films is not only a function of inter-QD distance, but of the QD size and dielectric media of the surrounding materials. By conducting temperature dependent transmission, photoluminescence, and time resolved photoluminescence measurements, we gain insight into photoluminescence quenching and size-dependent carrier transport through QD ensembles. Turning to commercially relevant cadmium telluride (CdTe), we explore the high concentrations of self-compensating defects (donors and acceptors) in polycrystalline thin films via photoluminescence from recombination at defect sites. Low temperature (25 K) photoluminescence measurements of CdTe reveal numerous radiative transitions due to exciton, trap assisted, and donor-acceptor pair recombination events linked with various defect states. Here we explore the difference between films deposited via close space sublimation (CSS) and radio frequency magnetron sputtering, both as-grown and following a cadmium chloride treatment. The as-grown CSS films exhibited a strong donor-acceptor pair transition associated with deep defect states. Constructing photoluminescence spectra as a function of time from time-resolved photoluminescence data, we report on the temporal evolution of this donor-acceptor transition. Having gained insight into the cadmium telluride film quality from low temperature photoluminescence measurements

  19. Cadmium Telluride-Titanium Dioxide Nanocomposite for Photodegradation of Organic Substance.

    Science.gov (United States)

    Ontam, Areeporn; Khaorapapong, Nithima; Ogawa, Makoto

    2015-12-01

    Cadmium telluride-titanium dioxide nanocomposite was prepared by hydrothermal reaction of sol-gel derived titanium dioxide and organically modified cadmium telluride. The crystallinity of titanium dioxide in the nanocomposite was higher than that of pure titanium dioxide obtained by the reaction under the same temperature and pressure conditions, showing that cadmium telluride induced the crystallization of titanium dioxide. Diffuse reflectance spectrum of the nanocomposite showed the higher absorption efficiency in the UV-visible region due to band-gap excitation of titanium dioxide. The nanocomposite significantly showed the improvement of photocatalytic activity for 4-chlorophenol with UV light.

  20. Device characterization of cadmium telluride photovoltaics

    Science.gov (United States)

    Geisthardt, Russell M.

    Thin-film photovoltaics have the potential to make a large impact on the world energy supply. They can provide clean, affordable energy for the world. Understanding the device physics and behavior will enable increases in efficiency which will increase their impact. This work presents novel approaches for evaluating efficiency, as well as a set of tools for in-depth whole-cell and uniformity characterization. The understanding of efficiency losses is essential for reducing or eliminating the losses. The efficiency can be characterized by a breakdown into three categories: solar spectrum, optical, and electronic efficiency. For several record devices, there is little difference in the solar spectrum efficiency, modest difference in the optical efficiency, and large difference in the electronic efficiency. The losses within each category can also be further characterized. The losses due to the broad solar spectrum and finite temperature are well understood from a thermodynamic physics perspective. Optical losses can be fully characterized using quantum efficiency and optical measurements. Losses in fill factor can be quantified from series and shunt resistance, as well as the expected fill factor from the measured V oc and A. Open-circuit voltage losses are the most significant, but are also be the hardest to understand, as well as the most technology-dependent. Characterization of the whole cell helps to understand the behavior, performance, and properties of the cell. Several different tools can be used for whole-cell characterization, including current-voltage, quantum efficiency, and capacitance measurements. Each of these tools give specific information about the behavior of the cell. When combined, they can lead to a more complete understanding of the cell performance than when taken individually. These tools were applied to several specific CdTe experiments. They have helped to characterize the baseline performance of both the deposition tool and the

  1. Megapixel mercury cadmium telluride focal plane arrays for infrared imaging out to 12 microns Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the fabrication of large format, long wave infrared (LWIR) mercury cadmium telluride (HgCdTe or MCT) detector arrays where the cutoff wavelength is...

  2. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; and James, R.B.

    2010-08-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  3. Mercury Cadmium Telluride Photoconductive Long Wave Infrared Linear Array Detectors

    Directory of Open Access Journals (Sweden)

    Risal Singh

    2003-07-01

    Full Text Available Mercury cadmium telluride (Hg1-x, CdxTe (MCT photoconductive long wave infrared linear arrays are still in demand due to several advantages. The linear array technology is well established, easier, economical and is quite relevant to thermal imaging even today. The scan thermal imaging systems based on this technology offer wider field of view coverage and capacity for higher resolution in the scan direction relative to staring systems that use expensive and yet to mature focal plane array detector technology. A critical review on photoconductive n-Hg1-x CdxTe linear array detector technology for the long wave infrared range has been presented. The emphasis lies on detector design and processing technology. The critical issues of diffusion and drift effects, Hi-Lo and heterostructure blocking contacts, surface passivation, and other related aspects have been considered from the detector design angle. The device processing technology aspects are of vital importance

  4. Precision timing detectors with cadmium-telluride sensor

    Science.gov (United States)

    Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

    2017-09-01

    Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

  5. Influence of post-deposition heat treatment on optical properties derived from UV–vis of cadmium telluride (CdTe) thin films deposited on amorphous substrate

    Energy Technology Data Exchange (ETDEWEB)

    Punitha, K. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Ganesan, V. [UGC-DAE Consortium for Scientific Research, Indore 452001 (India)

    2015-07-30

    Graphical abstract: - Highlights: • Annealing-induced change in optical parameters of CdTe film was derived from UV–vis study. • Optical constants of the films were evaluated using Swanepoel method. • Dispersion energy data obeyed the single oscillator of the Wemple−Didomenico model. • Cd deficiency of the film confirmed the p-type conductive nature. - Abstract: In this work, we report on post-deposition heat treatment (annealing)-induced change in optical properties derived from UV–vis study of CdTe thin films prepared on amorphous glass substrate by electron beam evaporation technique. Annealing effect gives rise to the enhancement in crystalline nature (zinc blende structure) of CdTe films with (1 1 1) preferred orientation. The average transmittance was increased with the annealing temperature and the slight shift in transmission threshold towards higher wavelength region revealed the systematic reduction in optical energy band gap. The existence of shallow level just below the conduction band, within the band gap was identified in the range of 0.23 and 0.14 eV for the films annealed at 200 and 450 °C, respectively. The optical quality of deposited films was confirmed by the photoluminescence study. In addition, the scanning electron microscopic measurement supports the result of X-ray diffraction study. The Swanepoel, Hervé-Vandamme, and Wemple−DiDomenico models have been employed to evaluate the various optical parameters of CdTe films. These results are correlated well with other physical properties and discussed with the possible concepts underlying the phenomena.

  6. The effect of substrate rotation rate on physical properties of cadmium telluride films prepared by a glancing angle deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Hosseini Siyanaki, Fatemeh, E-mail: fatemeh.hosseini@gmail.com; Rezagholipour Dizaji, Hamid, E-mail: hrgholipour@semnan.ac.ir; Ehsani, Mohammad Hossein, E-mail: mhe_ehsani@yahoo.com; Khorramabadi, Shiva, E-mail: khorramabadi.sh@gmail.com

    2015-02-27

    Physical properties of cadmium telluride thin films, deposited on glass substrates by modified glancing angle deposition (GLAD) technique with various substrate rates of rotation, were investigated in this study. In contrast to obliquely columnar thin films fabricated by the conventional GLAD technique, in which higher columnar angle is coupled to higher degree of porosity, this study introduces obliquely deposited thin films which have packed columnar structures despite their highly tilted columns. Structural and optical properties and surface morphology of the CdTe thin films deposited by this technique were studied using X-ray diffraction, UV–visible spectroscopy and field emission scanning electron microscopy. - Highlights: • Glancing angle deposition technique was employed to prepare CdTe thin films. • The effect of substrate rate of rotation on optical properties was studied. • Highly tilted and packed columnar structure was fabricated. • A dramatic decline in refractive index in one of the specimens was observed.

  7. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  8. Directional Solidification of Mercury Cadmium Telluride in Microgravity

    Science.gov (United States)

    Lechoczhy, Sandor L.; Gillies, Donald C.; Szofran, Frank R.; Watring, Dale A.

    1998-01-01

    Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

  9. Current transport mechanisms in mercury cadmium telluride diode

    Science.gov (United States)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  10. The single molecular precursor approach to metal telluride thin films: imino-bis(diisopropylphosphine tellurides) as examples.

    Science.gov (United States)

    Ritch, Jamie S; Chivers, Tristram; Afzaal, Mohammad; O'Brien, Paul

    2007-10-01

    Interest in metal telluride thin films as components in electronic devices has grown recently. This tutorial review describes the use of single-source precursors for the preparation of metal telluride materials by aerosol-assisted chemical vapour deposition (AACVD) and acquaints the reader with the basic techniques of materials characterization. The challenges in the design and synthesis of suitable precursors are discussed, focusing on metal complexes of the recently-developed imino-bis(diisopropylphosphine telluride) ligand. The generation of thin films and nanoplates of CdTe, Sb(2)Te(3) and In(2)Te(3) from these precursors are used as illustrative examples.

  11. High-Rate Vapor Deposition of Cadmium Telluride Films for Solar Cells

    Science.gov (United States)

    Khan, Nasim Akhter

    1992-01-01

    High rate vapor deposition is presently used for large scale low cost deposition of thin films for packaging and other applications. The feasibility of using this technology for low cost deposition of solar cells was explored. After an exhaustive literature survey, the cadmium telluride (CdTe) solar cell was found to be most suitable candidate for high rate vapor deposition. The high rate vapor deposition was investigated by sublimation with a short distance between sublimation source and the substrate (Close-Spaced Sublimation, CSS). Cadmium telluride (CdTe) solar cells were fabricated by depositing CdTe films at different rates on cadmium sulphide (CdS) films deposited by CSS or by evaporation. The CdTe films deposited at higher deposition rates were observed to have open circuit voltages (V_{ rm oc}) comparable to those deposited at lower rates. The effect of CdS film which acts as window layer for the cells were also investigated on the V_ {rm oc} of the solar cells. The results achieved proved the fact that CdS window layer is necessary to achieve higher V_{ rm oc} from solar cells. The substrate temperature during deposition of films by close space sublimation plays a vital role in the performance of solar cell. The increase in the substrate temperature during deposition of CdTe films increased the V_{rm oc} of solar cells. The solar cells with indium tin oxide (ITO) as top conductor, i.e. ITO/CdS/CdTe configuration were fabricated at rates up to 34 mum/minute and with tin oxide (TO) i.e. TO/CdTe configuration fabricated at rates up to 79 mum/minute have shown similar V_{rm oc} compared to those produced at lower rates. Higher CdTe film deposition rates are possible with larger capacity experimental setup. The method of contacting CdTe, used in this study, results in higher series resistance. An improved method of contacting CdTe needs to be developed.

  12. LEACHING OF CADMIUM, TELLURIUM AND COPPER FROM CADMIUM TELLURIDE PHOTOVOLTAIC MODULES.

    Energy Technology Data Exchange (ETDEWEB)

    FTHENAKIS,V.

    2004-02-03

    Separating the metals from the glass is the first step in recycling end-of-life cadmium telluride photovoltaic modules and manufacturing scrap. We accomplished this by leaching the metals in solutions of various concentrations of acids and hydrogen peroxide. A relatively dilute solution of sulfuric acid and hydrogen peroxide was found to be most effective for leaching cadmium and tellurium from broken pieces of CdTe PV modules. A solution comprising 5 mL of hydrogen peroxide per kg of PV scrap in 1 M sulfuric acid, gave better results than the 12 mL H{sub 2}O{sub 2}/kg, 3.2 M H{sub 2}SO{sub 4} solution currently used in the industry. Our study also showed that this dilute solution is more effective than hydrochloric-acid solutions and it can be reused after adding a small amount of hydrogen peroxide. These findings, when implemented in large-scale operation, would result in significant savings due to reductions in volume of the concentrated leaching agents (H{sub 2}SO{sub 4} and H{sub 2}O{sub 2}) and of the alkaline reagents required to neutralize the residuals of leaching.

  13. Investigations of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Carcelen, V.; Gul, R.; James, R.

    2009-10-06

    Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot, and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam X-ray topography (SWBXT), current-voltage (I-V) measurements, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors to irradiation exposure. The crystal from the stable growth region proved superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by two orders-of-magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau}){sub e} value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including for applications in medicine.

  14. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

    Energy Technology Data Exchange (ETDEWEB)

    Sizov, F.; Zabudsky, V.; Petryakov, V.; Golenkov, A.; Andreyeva, K.; Tsybrii, Z. [Institute of Semiconductor Physics, 03028 Kiev (Ukraine); Dvoretskii, S. [Institute of Semiconductor Physics of SB RAS, 630090 Novosibirsk (Russian Federation)

    2015-02-23

    In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

  15. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

    Science.gov (United States)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.

    2017-02-01

    An epitaxial 1-3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality 100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

  16. Characterization of large cadmium zinc telluride crystals grown by traveling heater method

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Iniewski, K.

    2008-01-01

    The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these c......The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions...

  17. Optical property of amorphous semiconductor mercury cadmium telluride from first-principles study

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The structural and optical properties of amorphous semiconductor mercury cadmium telluride (a-MCT) are obtained by the first principles calculations. The total pair distribution functions and the density of states show that the a-MCT has the semiconductor characteristic. The calculated results of dielectric function show that E2 peak of the imaginary of dielectric function for the crystal mercury cadmium telluride abruptly disappears in the amorphous case due to the long-range disorders. And the imaginary of dielectric function of a-MCT shows a large broad peak, which is in agreement with the available results of other amorphous semiconductors. From the linear extrapolation of the curve ωε 2(ω)1/2 versus ω, it can be obtained that the optical energy gap of amorphous semiconductor Hg0.5Cd0.5Te is 0.51±0.05 eV.

  18. From front contact to back contact in cadmium telluride/cadmium sulfide solar cells: Buffer layer and interfacial layer

    Science.gov (United States)

    Roussillon, Yann

    Cadmium telluride (CdTe) polycrystalline thin film solar cells, with their near optimum direct band-gap of 1.4 eV matching almost perfectly the sun radiation spectrum, are a strong contender as a less expensive alternative, among photovoltaic materials, than the more commonly used silicon-based cells. Polycrystalline solar cells are usually deposited over large areas. Such devices often exhibit strong fluctuations (nonuniformities) in electronic properties, which originate from deposition and post-deposition processes, and are detrimental to the device performance. Therefore their effects need to be constrained. A new approach in this work was, when a CdS/CdTe solar cell is exposed to light and immersed in a proper electrolyte, fluctuations in surface potential can drive electrochemical reactions which result in a nonuniform interfacial layer that could balance the original nonuniformity. This approach improved the device efficiency for CdS/CdTe photovoltaic devices from 1--3% to 11--12%. Cadmium sulfide (CdS), used as a window layer and heterojunction partner to CdTe, is electrically inactive and absorb light energies above its band-gap of 2.4 eV. Therefore, to maximize the device efficiency, a thin US layer needs to be used. However, more defects, such as pinholes, are likely to be present in the film, leading to shunts. A resistive transparent layer, called buffer layer, is therefore deposited before CdS. A key observation was that the open-circuit voltage (Voc) for cells made using a buffer layer was high, around 800 mV, similar to cells without buffer layer after Cu doping. The standard p-n junction theory cannot explain this phenomena, therefore an alternative junction mechanism, similar to metal-insulator-semiconductor devices, was developed. Furthermore, alternative Cu-free back-contacts were used in conjunction with a buffer layer. The Voc of the devices was found to be dependent of the back contact used. This change occurs as the back-contact junction

  19. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Mesquita, Anderson Fuzer [Departamento de Química, CCE, Universidade Federal do Espírito Santo, Campus Goiabeiras, 29075-910 Vitória, Espírito Santo (Brazil); Porto, Arilza de Oliveira, E-mail: arilzaporto@yahoo.com.br [Departamento de Química, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil); Magela de Lima, Geraldo [Departamento de Química, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil); Paniago, Roberto [Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil); Ardisson, José Domingos [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN/CNEN, Belo Horizonte, Minas Gerais (Brazil)

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  20. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    OpenAIRE

    Nor A. Abdul-Manaf; Hussein I. Salim; Mohammad L. Madugu; Olajide I. Olusola; Imyhamy M. Dharmadasa

    2015-01-01

    Cadmium telluride (CdTe) thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2)·H2O and tellurium dioxide (TeO2) using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD), Raman spectroscopy, optical profilometry, DC current-voltage (I-V) measurements, photoelectrochemical (PEC) cell measurement, scanning electron micr...

  1. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    Science.gov (United States)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  2. Thin tungsten telluride layer preparation by thermal annealing

    Science.gov (United States)

    Lu, Wei; Zhang, Yudao; Zhu, Zusong; Lai, Jiawei; Zhao, Chuan; Liu, Xuefeng; Liu, Jing; Sun, Dong

    2016-10-01

    We report a simple method to prepare a thin Tungsten Telluride (WTe2) flake with accurate thickness control, which allows preparing and studying this two dimensional material conveniently. First, the WTe2 flake, which is relatively thick due to its strong interlayer van der Waals forces, is obtained by a conventional mechanical exfoliation method. Then, the exfoliated flake is annealed at 600 °C under a constant Ar protecting flow. Raman and atomic force spectroscopy characterizations demonstrate that thermal annealing can effectively thin down the WTe2 flake and retain its original lattice structure, though its surface smoothness is slightly deteriorated. Additionally, systematical study indicates that the thinning process strongly depends on the initial thickness of the WTe2 flake before annealing: the thinning rate increases from 0.12 nm min-1 to 0.36 nm min-1 as the initial thickness increases from 10 nm to 45 nm, while the roughness of the final product also increases with the increase of its initial thickness. However, the method fails when it is applied to WTe2 flakes thicker than 100 nm, resulting in uneven or burnt surface, which is possibly caused by big cavities formed by a large amount of defects gathered at the top surface.

  3. Spatial mapping of cadmium zinc telluride materials properties and electrical response to improve device yield and performance

    CERN Document Server

    Van Scyoc, J M; Yoon, H; Gilbert, T S; Hilton, N R; Lund, J C; James, R B

    1999-01-01

    Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.

  4. Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

    Science.gov (United States)

    Palosz, W.; George, M. A.; Collins, E. E.; Chen, K.-T.; Zhang, Y.; Burger, A.

    1997-01-01

    Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

  5. Te-doped cadmium telluride films fabricated by close spaced sublimation

    Science.gov (United States)

    Li, J.; Zheng, Y. F.; Xu, J. B.; Dai, K.

    2003-07-01

    Te-doped cadmium telluride (CdTe) films were deposited on ITO/glass substrates using the close spaced sublimation (CSS) method. The films were characterized by x-ray diffraction (XRD), the x-ray fixed-quantity (XRF) method, scanning electron microscopy (SEM) and the Hall effect. The XRD and SEM results show that appropriate Te doping would be favourable to the growth of CdTe crystallite. The Hall effect measurements indicate that the conductivity of CdTe films could be dramatically improved by Te doping. The work presented here suggests that p-type doping CdTe films can be produced using this deposition method.

  6. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

    Science.gov (United States)

    Lehoczky, S. L.; Szofran, F. R.

    1981-01-01

    Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

  7. Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging.

    Science.gov (United States)

    Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

    2017-01-01

    The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method.

  8. Study of a high-resolution, 3-D positioning cadmium zinc telluride detector for PET

    OpenAIRE

    Gu, Y.; Matteson, J. L.; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-01-01

    This paper investigates the performance of 1 mm resolution Cadmium Zinc Telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3-D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06±0.39% at 511 keV thr...

  9. Operational Studies of Cadmium Zinc Telluride Microstrip Detectors using SVX ASIC Electronics

    Science.gov (United States)

    Krizmanic, John; Barbier, L. M.; Barthelmy, S.; Bartlett, L.; Birsa, F.; Gehrels, N.; Hanchak, C.; Kurczynski, P.; Odom, J.; Parsons, A.; Palmer, D.; Sheppard, D.; Snodgrass, S.; Stahle, C. M.; Teegarden, B.; Tueller, J.

    1997-04-01

    We have been investigating the operational properties of cadmium zinc telluride (CZT) microstrip detectors by using SVX ASIC readout electronics. This research is in conjunction with the development of a CZT-based, next generation gamma-ray telescope for use in the gamma-ray Burst ArcSecond Imaging and Spectroscopy (BASIS) experiment. CZT microstrip detectors with 128 channels and 100 micron strip pitch have been fabricated and were interfaced to SVX electronics at Goddard Space Flight Center. Experimental results involving position sensing, spectroscopy, and CZT operational properties will be presented.

  10. Synthesis of ultra-long cadmium telluride nanotubes via combinational chemical transformation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kee-Ryung; Cho, Hong-Baek; Choa, Yong-Ho, E-mail: choa15@hanyang.ac.kr

    2017-03-01

    Synthesis of high-throughput cadmium telluride (CdTe) nanotubes with an ultra-long aspect ratio is presented via a combination process concept combined with electrospinning, electrodeposition, and cationic exchange reaction. Ultra-long sacrificial silver (Ag) nanofibers were synthesized by electrospinning involving two-step calcination, and were then electrodeposited to create silver telluride nanotubes. These nanotubes underwent cationic exchange reaction in cadmium nitrate tetrahydrate solution with the aid of a ligand, tributylphosphine (TBP). Analysis showed that ultra-long pure zinc blende CdTe nanotubes were obtained with controlled dimension and uniform morphology. The thermodynamic driving force induced by the coordination of methanol solvent and TBP attributed to overcome the kinetic barrier between Ag{sub 2}Te and CdTe nanotubes, facilitating the synthesis of CdTe nanotubes. This synthetic process involving a topotactic reaction route paves a way for high-throughput extended synthesis of new chalcogenide hollow nanotubes for application in photodetectors and solar cells. - Highlights: • High throughput synthetic route of hollow CdTe nanotubes with ultra-long aspect ratio. • Chemical combination of electrospinning, electrodeposition & cation exchange reaction. • Pure zinc blende CdTe by controlled dimension & structural variation of Ag nanofibers. • Potential for the high throughput synthesis of new exotic chalcogenide nanotubes.

  11. Photoluminescence Excitation Spectroscopy Characterization of Cadmium Telluride Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Moore, James E.; Wang, Xufeng; Grubbs, Elizabeth K.; Drayton, Jennifer; Johnston, Steve; Levi, Dean; Lundstrom, Mark S.; Bermel, Peter

    2016-11-21

    The use of steady-state photoluminescence spectroscopy as a contactless characterization tool, suitable for inline optical characterization, has been previously demonstrated for high efficiency solar cells such as GaAs. In this paper, we demonstrate the use of PLE characterization on a thin film CdS/CdTe np heterojunction solar cell, and compare the results to measured EQE and I-V data. In contrast to previous work on high-quality GaAs, the PLE and EQE spectra do not match closely here. We still find, however, that reliable material parameters can be extracted from the PLE measurements. We also provide a physical explanation of the limits defining the cases when the PLE and EQE spectra may be expected to match.

  12. Radio-frequency magnetron triode sputtering of cadmium telluride and zinc telluride films and solar cells

    Science.gov (United States)

    Sanford, Adam Lee

    The n-CdS/p-CdTe solar cell has been researched for many years now. Research groups use a variety of processes to fabricate thin-film CdS/CdTe cells, including physical vapor deposition, chemical vapor deposition, and RF diode sputtering. One of the central areas of investigation concerning CdS/CdTe cells is the problem of a Schottky barrier at the back contact. Even cells fabricated with ohmic back contacts degrade into Schottky barriers as the devices are used. This severely degrades power generation. One possible solution is to use p+-ZnTe as an interlayer between CdTe and the back contact. ZnTe is easily doped with Cu to be p-type. However, even contacts with this ZnTe interlayer degrade over time, because Cu is highly mobile and diffuses away from the contact towards the CdS/CdTe junction. Another possibility is to dope ZnTe with N. It has been demonstrated using molecular beam epitaxy and RF diode sputtering. In this study, CdTe films are fabricated using a variation of RF diode sputtering called triode sputtering. This technique allows for control of ion bombardment to the substrate during deposition. Also, a higher plasma density near the target is achieved allowing depositions at lower pressures. These films are characterized structurally to show the effects of the various deposition parameters. N-doped ZnTe films are also fabricated using this technique. These films are characterized electrically to show the effects of the various deposition parameters. Also, the effects of post-deposition annealing are observed. It is found that annealing at the right temperature can increase the conductivity of the films by a factor of 3 or more. However, annealing at higher temperatures decreases the conductivity to as low as 12% of the initial conductivity. Finally, RF triode sputtered N-doped ZnTe films are used as an interlayer at the back contact of a CdS/CdTe solar cell. The effects of annealing the device before and after contact deposition are observed

  13. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  14. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    OpenAIRE

    Zhouling Wang; Yu Hu; Wei Li; Guanggen Zeng; Lianghuan Feng; Jingquan Zhang; Lili Wu; Jingjing Gao

    2014-01-01

    Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was high...

  15. Sintered cadmium telluride nanocrystal photovoltaics: Improving chemistry to facilitate roll-to-roll fabrication

    Science.gov (United States)

    Kurley, James Matthew, III

    Recent interest in clean, renewable energy has increased importance on cost-effective and materials efficient deposition methods. Solution-processed solar cells utilizing cadmium telluride nanocrystal inks offer a viable method for reducing cost, increasing materials effectiveness, and decreasing the need for fossil fuels in the near future. Initial work focused on developing a useful platform for testing new chemistries for solubilizing and depositing nanocrystal inks. Layer-by-layer deposition using a combination of spincoating, cadmium chloride treatment, and annealing created a photovoltaic-grade CdTe absorber layer. In conjunction with layer-by-layer deposition, a device architecture of ITO/CdTe/ZnO/Al was utilized to create power conversion efficiencies of over 12% with the help of current/light soaking. Detailed exploration of device geometry, capacitance measurements, and intensity- and temperature-dependent testing determined the ITO/CdTe interface required additional scrutiny. This initial investigation sparked three new. avenues of research: create an Ohmic contact to CdTe, remove the cadmium chloride bath treatment, and create a roll-to-roll friendly process. Improved contact between ITO and CdTe was achieved by using a variety of materials already proven to create Ohmic contact to CdTe. While most of these materials were previously employed using standard approaches, solution-processed analogs were explored. The cadmium chloride bath treatment proved inconsistent, wasteful, and difficult to utilize quickly. It was removed by using trichlorocadmate-capped nanocrystals to combine the semiconductor with the required grain growth agent. To establish roll-to-roll friendly process, the deposition method was improved, heating source changed, and cadmium chloride bath step was removed. Spraycoating or doctor-blading the trichlorocadmate-capped nanocrystals followed by annealing with an IR lamp established a process that can deposit CdTe in a high throughput

  16. Cadmium telluride quantum dots as pH-sensitive probes for tiopronin determination

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yunqing; Ye Chao; Zhu Zhenghui [Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing 210009 (China); Department of Analytical Chemistry, China Pharmaceutical University, Nanjing 210009 (China); Hu Yuzhu [Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing 210009 (China) and Department of Analytical Chemistry, China Pharmaceutical University, Nanjing 210009 (China)], E-mail: njhuyuzu@126.com

    2008-03-03

    The pH-sensitive cadmium telluride (CdTe) quantum dots (QDs) were used as proton probes for tiopronin determination. Based on the fluorescence quenching of CdTe QDs caused by tiopronin, a simple, rapid and specific quantitative method was proposed. Under the optimal conditions, the calibration plot of ln(F{sub 0}/F) with concentration of tiopronin was linear in the range of 0.15-20 {mu}g mL{sup -1}(0.92-122.5 {mu}mol L{sup -1}) with correlation coefficient of 0.998. The limit of detection (LOD) (3{sigma}/k) was 0.15 {mu}g mL{sup -1}(0.92 {mu}mol mL{sup -1}). The content of tiopronin in pharmaceutical tablet was determined by the proposed method and the result agreed with that obtained from the oxidation-reduction titration method and the claimed value.

  17. Experiments and Monte Carlo modeling of a higher resolution Cadmium Zinc Telluride detector for safeguards applications

    Science.gov (United States)

    Borella, Alessandro

    2016-09-01

    The Belgian Nuclear Research Centre is engaged in R&D activity in the field of Non Destructive Analysis on nuclear materials, with focus on spent fuel characterization. A 500 mm3 Cadmium Zinc Telluride (CZT) with enhanced resolution was recently purchased. With a full width at half maximum of 1.3% at 662 keV, the detector is very promising in view of its use for applications such as determination of uranium enrichment and plutonium isotopic composition, as well as measurement on spent fuel. In this paper, I report about the work done with such a detector in terms of its characterization. The detector energy calibration, peak shape and efficiency were determined from experimental data. The data included measurements with calibrated sources, both in a bare and in a shielded environment. In addition, Monte Carlo calculations with the MCNPX code were carried out and benchmarked with experiments.

  18. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhaoyun [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu Province (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-04-15

    Highlights: • We introduce an intermediate cadmium telluride quantum dots (CdTe QDs) layer between the organic with silicon nanowires of hybrid solar cells as a down-shifting layer. • The hybrid solar cell got the maximum short circuit current density of 33.5 mA/cm{sup 2}, getting an increase of 15.1% comparing to solar cell without CdTe QDs. • The PCE of the hybrid solar cells with CdTe QDs layer increases 28.8%. - Abstract: We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density–voltage (J–V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (J{sub sc}) of solar cells with CdTe QDs layer can reach 33.5 mA/cm{sup 2}. Compared with the solar cells without CdTe QDs, J{sub sc} has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  19. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  20. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  1. The energetic impact of small Cd{sub x}Te{sub y} clusters on Cadmium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Miao, E-mail: M.Yu2@lboro.ac.uk; Kenny, Steven D., E-mail: S.D.Kenny@lboro.ac.uk

    2015-06-01

    Cadmium Telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to do research on how these defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. Single deposition tests have been performed, to study the behaviour of deposited clusters under different conditions. We deposit a Cd{sub x}Te{sub y} (x,y = 0,1) cluster onto the (100) and (111) Cd and Te terminated surfaces with energies ranging from 1 to 40 eV. More than 1000 simulations have been performed for each of these cases so as to sample the possible deposition positions and to collect sufficient statistics. The results show that Cd atoms are more readily sputtered from the surface than Te atoms and the sticking probability is higher on Te terminated surfaces than Cd terminated surfaces. They also show that increasing the deposition energy typically leads to an increase in the number of atoms sputtered from the system and tends to decrease the number of atoms that sit on or in the surface layer, whilst increasing the number of interstitials observed. - Highlights: • Deposition of Cd, Te and CdTe particles on (100) and (111) Cd and Te surfaces • Cd atoms are more readily sputtered from the surface than Te atoms. • The Te terminated surfaces have a higher sticking probability than the Cd ones. • Higher impact energies imply more sputtered atoms from the surface.

  2. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Varade, Vaibhav, E-mail: vaibhav.tvarade@gmail.com; Jagtap, Amardeep M.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Anjaneyulu, P. [Department of Physics, Gitam University, Hyderabad 502329 (India)

    2015-06-07

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  3. Optical properties of cadmium telluride in zinc-blende and wurzite structure

    Energy Technology Data Exchange (ETDEWEB)

    Hosseini, S.M. [Department of Physics, Materials and Electroceramics Laboratory, Ferdowsi University of Mashhad (Iran, Islamic Republic of)], E-mail: sma_hosseini@yahoo.com

    2008-05-01

    The optical properties of cadmium telluride including the linear optical dielectric function, the refractive index, the extinction coefficient, the reflectivity and the plasmon energy have been calculated by density functional theory (DFT). The full potential linearized augmented plane wave (FL-LAPW) method was used with the generalized gradient approximation (GGA) including the orbital dependence of the self-energy, i.e. the orbital-dependent potentials of Coulomb and exchange interactions (GGA+U). Using only LDA or GGA methods underestimates the electronic parameters (band gap and band dispersion). Applying orbital-dependent potentials splits the Te-5s state and shifts the binding energies of the Cd-4d levels towards the experimentally determined position. The calculated results indicated that although Te-5s and Cd-4d overlap, Cd-4d plays an important role in absorption and reflectivity constants. The optical constants of CdTe in hexagonal structure exhibit anisotropy (birefringence) in two directions (in basal-plan and c-axis) but the difference is very small in the static limit.

  4. Optical properties of cadmium telluride in zinc-blende and wurzite structure

    Science.gov (United States)

    Hosseini, S. M.

    2008-05-01

    The optical properties of cadmium telluride including the linear optical dielectric function, the refractive index, the extinction coefficient, the reflectivity and the plasmon energy have been calculated by density functional theory (DFT). The full potential linearized augmented plane wave (FL-LAPW) method was used with the generalized gradient approximation (GGA) including the orbital dependence of the self-energy, i.e. the orbital-dependent potentials of Coulomb and exchange interactions (GGA+ U). Using only LDA or GGA methods underestimates the electronic parameters (band gap and band dispersion). Applying orbital-dependent potentials splits the Te-5s state and shifts the binding energies of the Cd-4d levels towards the experimentally determined position. The calculated results indicated that although Te-5s and Cd-4d overlap, Cd-4d plays an important role in absorption and reflectivity constants. The optical constants of CdTe in hexagonal structure exhibit anisotropy (birefringence) in two directions (in basal-plan and c-axis) but the difference is very small in the static limit.

  5. Novel Cadmium Zinc Telluride Devices for Myocardial Perfusion Imaging-Technological Aspects and Clinical Applications.

    Science.gov (United States)

    Ben-Haim, Simona; Kennedy, John; Keidar, Zohar

    2016-07-01

    Myocardial perfusion imaging plays an important role in the assessment of patients with known or suspected coronary artery disease and is well established for diagnosis and for prognostic evaluation in these patients. The dedicated cardiac SPECT cameras with solid-state cadmium zinc telluride (CZT) detectors were first introduced a decade ago. A large body of evidence is building up, showing the superiority of the new technology compared with conventional gamma cameras. Not only the CZT detectors, but also new collimator geometries, the ability to perform focused imaging optimized for the heart and advances in data processing algorithms all contribute to the significantly improved sensitivity up to 8-10 times, as well as improved energy resolution and improved reconstructed spatial resolution compared with conventional technology. In this article, we provide an overview of the physical characteristics of the CZT cameras, as well as a review of the literature published so far, including validation studies in comparison with conventional myocardial perfusion imaging and with invasive coronary angiography, significant reduction in radiation dose, and new imaging protocols enabled by the new technology.

  6. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beck, Patrick R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  7. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    Science.gov (United States)

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-09-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations.

  8. Directional Solidification of Mercury Cadmium Telluride During the Second United States Microgravity Payload Mission (USMP-2)

    Science.gov (United States)

    Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Watring, D. A.; Alexander, H. A.; Jerman, G. A.

    1996-01-01

    As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  9. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    Science.gov (United States)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  10. Heart imaging by cadmium telluride gamma camera European Program 'BIOMED' consortium

    CERN Document Server

    Scheiber, C; Chambron, J; Prat, V; Kazandjan, A; Jahnke, A; Matz, R; Thomas, S; Warren, S; Hage-Hali, M; Regal, R; Siffert, P; Karman, M

    1999-01-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3x3 mm, field of view: 15 cmx15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15 deg. tilt of the collimator with respect to the detector grid. A 16x16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16...

  11. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae.

    Science.gov (United States)

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells.

  12. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    Science.gov (United States)

    Campbell, D. L.; Peterson, T. E.

    2014-11-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  13. Energy-discriminating X-ray computed tomography system utilizing a cadmium telluride detector

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Eiichi, E-mail: eiichisato@hotmail.co [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba 028-3694 (Japan); Abderyim, Purkhet [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba 028-3694 (Japan); Enomoto, Toshiyuki; Watanabe, Manabu [The 3rd Department of Surgery, Toho University School of Medicine, 2-17-6 Ohashi, Meguro-ku, Tokyo 153-8515 (Japan); Hitomi, Keitaro [Department of Electronics and Intelligent Systems, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577 (Japan); Takahasi, Kiyomi; Sato, Shigehiro [Department of Microbiology, School of Medicine, Iwate Medical University, 19-1 Uchimaru, Morioka 020-8505 (Japan); Ogawae, Akira [Department of Neurosurgery, School of Medicine, Iwate Medical University, 19-1 Uchimaru, Morioka 020-8505 (Japan); Onagawa, Jun [Department of Electronics, Faculty of Engineering, Tohoku Gakuin University, 1-13-1 Chuo, Tagajo 985-8537 (Japan)

    2010-07-21

    An energy-discriminating K-edge X-ray computed tomography (CT) system is useful for increasing contrast resolution of a target region utilizing contrast media and for reducing the absorbed dose for patients. The CT system is of the first-generation type with a cadmium telluride (CdTe) detector, and a projection curve is obtained by translation scanning using the CdTe detector in conjunction with an x-stage. An object is rotated by the rotation step angle using a turntable between the translation scans. Thus, CT is carried out by repeating the translation scanning and the rotation of an object. Penetrating X-ray photons from the object are detected by the CdTe detector, and event signals of X-ray photons are produced using charge-sensitive and shaping amplifiers. Both the photon energy and the energy width are selected by use of a multi-channel analyzer, and the number of photons is counted by a counter card. Demonstration of enhanced iodine K-edge X-ray CT was carried out by selecting photons with energies just beyond the iodine K-edge energy of 33.2 keV.

  14. Study of a high-resolution, 3D positioning cadmium zinc telluride detector for PET

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Y; Levin, C S [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M, E-mail: cslevin@stanford.edu [Center for Astrophysics and Space Sciences, University of California, San Diego, La Jolla, CA 92093 (United States)

    2011-03-21

    This paper investigates the performance of 1 mm resolution cadmium zinc telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm x 40 mm x 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06 {+-} 0.39% at 511 keV throughout most of the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44 {+-} 0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78 {+-} 0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes-as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system.

  15. Study of a high-resolution, 3D positioning cadmium zinc telluride detector for PET

    Science.gov (United States)

    Gu, Y.; Matteson, J. L.; Skelton, R. T.; Deal, A. C.; Stephan, E. A.; Duttweiler, F.; Gasaway, T. M.; Levin, C. S.

    2011-03-01

    This paper investigates the performance of 1 mm resolution cadmium zinc telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06 ± 0.39% at 511 keV throughout most of the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44 ± 0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78 ± 0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes—as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system.

  16. Study of a high-resolution, 3-D positioning cadmium zinc telluride detector for PET

    Science.gov (United States)

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-01-01

    This paper investigates the performance of 1 mm resolution Cadmium Zinc Telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3-D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06±0.39% at 511 keV throughout most the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44±0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78±0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes – as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system. PMID:21335649

  17. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    Energy Technology Data Exchange (ETDEWEB)

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  18. 3D Particle Track Reconstrution in a Single Layer Cadmium-Telluride Hybrid Active Pixel Detector

    CERN Document Server

    Filipenko, Mykhaylo; Anton, Gisela; Michel, Thilo

    2014-01-01

    In the past 20 years the search for neutrinoless double beta decay has driven many developements in all kind of detector technology. A new branch in this field are highly-pixelated semiconductor detectors - such as the CdTe-Timepix detectors. It compromises a cadmium-telluride sensor of 14 mm x 14 mm x 1 mm size with an ASIC which has 256 x 256 pixel of 55 \\textmu m pixel pitch and can be used to obtain either spectroscopic or timing information in every pixel. In regular operation it can provide a 2D projection of particle trajectories; however, three dimensional trajectories are desirable for neutrinoless double beta decay and other applications. In this paper we present a method to obtain such trajectories. The method was developed and tested with simulations that assume some minor modifications to the Timepix ASIC. Also, we were able to test the method experimentally and in the best case achieved a position resolution of about 90 \\textmu m with electrons of 4.4 GeV.

  19. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    Science.gov (United States)

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-01-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations. PMID:27669995

  20. Spectral x-ray computed tomography scanner using a cadmium telluride detector

    Science.gov (United States)

    Sato, Eiichi; Oda, Yasuyuki; Yamaguchi, Satoshi; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Watanabe, Manabu; Kusachi, Shinya

    2016-10-01

    To obtain four tomograms with four different photon energy ranges simultaneously, we have developed a quad-energy Xray photon counter with a cadmium telluride (CdTe) detector and four sets of comparators and frequency-voltage converters (FVCs). X-ray photons are detected using the CdTe detector, and the event pulses from a shaping amplifier are sent to four comparators simultaneously to regulate four threshold energies of 20, 35, 50 and 65 keV. Using this counter, the energy ranges are 20-100, 35-100, 50-100 and 65-100 keV; the maximum energy corresponds to the tube voltage. Xray photons in the four ranges are counted using the comparators, and the logical pulses from the comparators are input to the FVCs. The outputs from the four FVCs are input to a personal computer through an analog-digital converter (ADC) to carry out quad-energy imaging. To observe contrast variations with changes in the threshold energy, we performed spectral computed tomography utilizing the quad-energy photon counter at a tube voltage of 100 kV and a current of 8.0 μA. In the spectral CT, four tomograms were obtained simultaneously with four energy ranges. The image contrast varied with changes in the threshold energy, and the exposure time for tomography was 9.8 min.

  1. Cadmium telluride (CdTe) and cadmium selenide (CdSe) leaching behavior and surface chemistry in response to pH and O2.

    Science.gov (United States)

    Zeng, Chao; Ramos-Ruiz, Adriana; Field, Jim A; Sierra-Alvarez, Reyes

    2015-05-01

    Cadmium telluride (CdTe) and cadmium selenide (CdSe) are increasingly being applied in photovoltaic solar cells and electronic components. A major concern is the public health and ecological risks associated with the potential release of toxic cadmium, tellurium, and/or selenium species. In this study, different tests were applied to investigate the leaching behavior of CdTe and CdSe in solutions simulating landfill leachate. CdTe showed a comparatively high leaching potential. In the Toxicity Characteristic Leaching Procedure (TCLP) and Waste Extraction Test (WET), the concentrations of cadmium released from CdTe were about 1500 and 260 times higher than the regulatory limit (1 mg/L). In contrast, CdSe was relatively stable and dissolved selenium in both leaching tests was below the regulatory limit (1 mg/L). Nonetheless, the regulatory limit for cadmium was exceeded by 5- to 6- fold in both tests. Experiments performed under different pH and redox conditions confirmed a marked enhancement in CdTe and CdSe dissolution both at acidic pH and under aerobic conditions. These findings are in agreement with thermodynamic predictions. Taken as a whole, the results indicate that recycling of decommissioned CdTe-containing devices is desirable to prevent the potential environmental release of toxic cadmium and tellurium in municipal landfills.

  2. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    Science.gov (United States)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  3. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    Science.gov (United States)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  4. Spectroscopic, microscopic, and internal stress analysis in cadmium telluride grown by close-space sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Manciu, Felicia S., E-mail: fsmanciu@utep.edu [Department of Physics, The University of Texas at El Paso, El Paso, TX 79968 (United States); Salazar, Jessica G. [Department of Physics, The University of Texas at El Paso, El Paso, TX 79968 (United States); Diaz, Aryzbe; Quinones, Stella A. [Department of Electrical and Computer Engineering, The University of Texas at El Paso, El Paso, TX 79968 (United States)

    2015-08-31

    High quality materials with excellent ordered structure are needed for developing photovoltaic and infrared devices. With this end in mind, the results of our research prove the importance of a detailed, comprehensive spectroscopic and microscopic analysis in assessing cadmium telluride (CdTe) characteristics. The goal of this work is to examine not only material crystallinity and morphology, but also induced stress in the deposit material. A uniform, selective growth of polycrystalline CdTe by close-space sublimation on patterned Si(111) and Si(211) substrates is demonstrated by scanning electron microscopy images. Besides good crystallinity of the samples, as revealed by both Raman scattering and Fourier transform infrared absorption investigations, the far-infrared transmission data also show the presence of surface optical phonon modes, which is direct evidence of confinement in such a material. The qualitative identification of the induced stress was achieved by performing confocal Raman mapping microscopy on sample surfaces and by monitoring the existence of the rock-salt and zinc-blende structural phases of CdTe, which were associated with strained and unstrained morphologies, respectively. Although the induced stress in the material is still largely due to the high lattice mismatch between CdTe and the Si substrate, the current results provide a direct visualization of its partial release through the relaxation effect at crystallite boundaries and of preferential growth directions of less strain. Our study, thus offers significant value for improvement of material properties, by targeting the needed adjustments in the growth processes. - Highlights: • Assessing the characteristics of CdTe deposited on patterned Si substrates • Proving the utility of confocal Raman microscopy in monitoring the induced stress • Confirming the partial stress release through the grain boundary relaxation effect • Demonstrating the phonon confinement effect in low

  5. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  6. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity.

  7. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    Directory of Open Access Journals (Sweden)

    Fan J

    2016-07-01

    Full Text Available Junpeng Fan,1–4 Ming Shao,1–4 Lu Lai,3–5 Yi Liu,3–5 Zhixiong Xie1–4,6 1College of Life Sciences, Wuhan University, 2Hubei Provincial Cooperative Innovation Center of Industrial Fermentation,3State Key Laboratory of Virology, 4Key Laboratory of Analytical Chemistry for Biology and Medicine (MOE, 5College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 6School of Life Science and Technology, Hubei Engineering University, Xiaogan, People’s Republic of China Abstract: Cadmium telluride quantum dots (CdTe QDs are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator, combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. Keywords: CdTe quantum dots, Saccharomyces cerevisiae, toxicity, autophagy

  8. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions.

    Science.gov (United States)

    Glick, Stephen J; Didier, Clay

    2013-10-14

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5-3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion

  9. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots.

    Science.gov (United States)

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-05

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9×10(-6)-6.1×10(-5)molL(-1) with a detection limit of 1.1×10(-7)molL(-1). The sensor was applied for determination of doxycycline in honey and human serum samples.

  10. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  11. Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

    Science.gov (United States)

    Flint, J. P.; Martinez, B.; Betz, T. E. M.; MacKenzie, J.; Kumar, F. J.; Bindley, G.

    2016-05-01

    Cadmium Zinc Telluride (CZT) is an important compound semiconductor material upon which Mercury Cadmium Telluride (MCT) layers are deposited epitaxially to form structures that are used in high performance detectors covering a wide infrared (IR) spectral band. The epitaxial growth of high quality MCT layers presents many technical challenges and a critical determinant of material performance is the quality of the underlying bulk CZT substrate. CZT itself is a difficult material to manufacture where traditional methods of bulk growth are complex and low yielding, which constrains the supply of commercially available substrates. In this work we report on the epitaxy-ready finishing of Travelling Heather Method (THM) grown Cd0.96Zn0.04Te substrates. The THM method is well established for the growth of high quality CZT crystals used in nuclear, X-ray and spectroscopic imaging applications and in this work we demonstrate the application of this technique to the growth of IR specification CZT substrates with areas of up to 5 cm x 5 cm square. We will discuss the advantages of the THM method over alternative methods of bulk CZT growth where the high yield and material uniformity advantages of this technique will be demonstrated. Chemo-mechanical polishing (CMP) of 4 cm x 4 cm CZT substrates reveals that III-V (InSb/GaSb) like levels of epitaxy-ready surface finishing may be obtained with modified process chemistries. Surface quality assessments will be made by various surface analytical and microscopy techniques from which the suitability of the material for subsequent assessment of quality by epitaxial growth will be ascertained.

  12. Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

    Science.gov (United States)

    Krishna, Ramesh M.

    In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of

  13. Deposition of antimony telluride thin film by ECALE

    Institute of Scientific and Technical Information of China (English)

    GAO; Xianhui; YANG; Junyou; ZHU; Wen; HOU; Jie; BAO; Siqian; FAN; Xi'an; DUAN; Xingkai

    2006-01-01

    The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.

  14. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  15. Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system.

    Science.gov (United States)

    Yang, Clayton S-C; Brown, Eiei; Kumi-Barimah, Eric; Hommerich, Uwe; Jin, Feng; Jia, Yingqing; Trivedi, Sudhir; D'souza, Arvind I; Decuir, Eric A; Wijewarnasuriya, Priyalal S; Samuels, Alan C

    2015-11-20

    In this work, we develop a mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5  s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared (LWIR) region (∼5.6-10  μm). Similar to the conventional UV-Vis LIBS, a broadband emission spectrum of condensed phase samples covering the whole 5.6-10 μm region can be acquired from just a single laser-induced microplasma or averaging a few single laser-induced microplasmas. Atomic and molecular signature emission spectra of solid inorganic and organic tablets and thin liquid films deposited on a rough asphalt surface are observed. This setup is capable of rapidly probing samples "as is" without the need of elaborate sample preparation and also offers the possibility of a simultaneous UV-Vis and LWIR LIBS measurement.

  16. Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy(ECALE)

    Institute of Scientific and Technical Information of China (English)

    ZHU Wen; YANG Junyou; GAO Xianhui; HOU Jie; BAO Siqian; FAN Xian

    2007-01-01

    Thin-layer electrochemical studies of the underpotential deposition(UPD)of Bi and Te on cold rolled silver substrate have been performed.The voltammetric analysis of underpotential shift demonstrates that the initial Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fitted UPD dynamics mechanism.A thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system.X-ray diffraction indicated the deposits of Bi2Te3.Energy Dispersive X-ray Detector quantitative analysis gave a 2:3 stoichiornetric ratio of Bi to Te,which was consistent with X-ray Diffraction results.Electron probe microanalysis of the deposits showed a network structure that results from the surface defects of the cold rolled Ag substrate and the lattice mismatch between substrate and deposit.

  17. Transport phenomena in the close-spaced sublimation deposition process for manufacture of large-area cadmium telluride photovoltaic panels: Modeling and optimization

    Science.gov (United States)

    Malhotra, C. P.

    With increasing national and global demand for energy and concerns about the effect of fossil fuels on global climate change, there is an increasing emphasis on the development and use of renewable sources of energy. Solar cells or photovoltaics constitute an important renewable energy technology but the major impediment to their widespread adoption has been their high initial cost. Although thin-film photovoltaic semiconductors such as cadmium sulfide-cadmium telluride (CdS/CdTe) can potentially be inexpensively manufactured using large area deposition techniques such as close-spaced sublimation (CSS), their low stability has prevented them from becoming an alternative to traditional polycrystalline silicon solar cells. A key factor affecting the stability of CdS/CdTe cells is the uniformity of deposition of the thin films. Currently no models exist that can relate the processing parameters in a CSS setup with the film deposition uniformity. Central to the development of these models is a fundamental understanding of the complex transport phenomena which constitute the deposition process which include coupled conduction and radiation as well as transition regime rarefied gas flow. This thesis is aimed at filling these knowledge gaps and thereby leading to the development of the relevant models. The specific process under consideration is the CSS setup developed by the Materials Engineering Group at the Colorado State University (CSU). Initially, a 3-D radiation-conduction model of a single processing station was developed using the commercial finite-element software ABAQUS and validated against data from steady-state experiments carried out at CSU. A simplified model was then optimized for maximizing the steady-state thermal uniformity within the substrate. It was inferred that contrary to traditional top and bottom infrared lamp heating, a lamp configuration that directs heat from the periphery of the sources towards the center results in the minimum temperature

  18. Improved Sensitization of Zinc Oxide Nanorods by Cadmium Telluride Quantum Dots through Charge Induced Hydrophilic Surface Generation

    Directory of Open Access Journals (Sweden)

    Karthik Laxman

    2014-01-01

    Full Text Available This paper reports on UV-mediated enhancement in the sensitization of semiconductor quantum dots (QDs on zinc oxide (ZnO nanorods, improving the charge transfer efficiency across the QD-ZnO interface. The improvement was primarily due to the reduction in the interfacial resistance achieved via the incorporation of UV light induced surface defects on zinc oxide nanorods. The photoinduced defects were characterized by XPS, FTIR, and water contact angle measurements, which demonstrated an increase in the surface defects (oxygen vacancies in the ZnO crystal, leading to an increase in the active sites available for the QD attachment. As a proof of concept, a model cadmium telluride (CdTe QD solar cell was fabricated using the defect engineered ZnO photoelectrodes, which showed ∼10% increase in photovoltage and ∼66% improvement in the photocurrent compared to the defect-free photoelectrodes. The improvement in the photocurrent was mainly attributed to the enhancement in the charge transfer efficiency across the defect rich QD-ZnO interface, which was indicated by the higher quenching of the CdTe QD photoluminescence upon sensitization.

  19. Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

    Science.gov (United States)

    Tian, Jin-Xiu; Zeng, Guang-Gen; He, Xu-Lin; Zhang, Jing-Quan; Wu, Li-Li; Li, Wei; Li, Bing; Wang, Wen-Wu; Feng, Liang-Huan

    2014-04-01

    The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta). It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo), diode ideal factor (A), quantum efficiency, carrier concentration and the depletion layer width. The decline in short-circuit current was very large and the efficiency of solar cells decreased obviously after irradiation. Reverse saturation current density increased, which indicates that p-n junction characteristics of solar cells were damaged, and diode ideal factor was almost the same, so current transport mechanism of solar cells has not changed. Quantum efficiency curves proved that the damage of solar cells' p-n junction influenced the collection of photo-generated carriers. Irradiation made carrier concentration reduce to 40.6%. The analyses have shown that. A new defect was induced by electron irradiation, whose position is close to 0.58 eV above the valence band in the forbidden band, and capture cross section is 1.78 x 10(-16) cm2. These results indicate that irradiation influences the generation of photo-generated carriers, increases the risk of the carrier recombination and the reverse dark current, and eventually makes the short-circuit current of solar cells decay.

  20. Investigation of the electrochemical deposition of thick layers of cadmium telluride; Etude du depot electrochimique de couches epaisses de tellurure de cadmium

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J

    2007-04-15

    This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented.

  1. Stability studies of cadmium telluride/cadmium sulfide thin film solar cells

    Science.gov (United States)

    Tetali, Bhaskar Reddy

    CdTe/CdS solar cells have shown great potential for terrestrial solar power applications. To be commercially viable they need to operate efficiently for about 30 years. CdS/CdTe solar cells fabricated at USF have shown record efficiencies upto 16.5% [46]. This research involves the study of thermal stress (TS) and light soaking (LS) on the stability of high efficiency (>10%) solar cells. The change in key electrical parameters Voc, FF, J sc, A and Jo are quantified for more than 2000 hours of stressing. The device degradation was found to increase with stress temperature for TS. Below 100°C, the changes were due to collection and recombination losses. Above 100°C, "shunting" mechanisms were found to start affecting the device performance. A fast drop in performance within the first 500 hours was observed. It is believed to be due to an increase in deep-level Cu-related defects that increase with stress temperature. Diffusion of Cu i+ ions from the back contact along CdTe grain boundaries had been previously reported [16]. An increase in light/dark J-V crossover and bulk Rs with stress time and temperature was observed. A slow degradation component attributed to Cu-related substitutional defect [23] formation/diffusion to the junction and CdS is proposed. This should compensate the CdS over time and increase its photoconductivity/resistivity. An improvement in the current collection and FF within 100 hours of LS was observed. This is possibly due to the enhancement of Cui + diffusion into the junction and CdS during LS as previously reported [16]. A reduction in light/dark J-V crossover was observed, possibly due to an increase in CdS doping and reduction in the CdS/SnO2 front contact barrier. However, a fast decrease in Voc and increase in recombination current was also observed in the first 1000 hours of LS. This is possibly due to the existence of higher concentration of Cu-related deep level defects at the junction. A larger decrease in Voc was found for LS than TS at the same operating temperature. A continuous drop in performance over time is observed for both TS and LS. The existence of a slow degradation component involving the formation/diffusion of Cu-related substitutional defects at the junction and CdS is proposed. The concentration of this defect is probably not high enough in CdS for LS samples to affect their photoconductivity and cause light/dark J-V crossover in 2000 hours.

  2. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

    Science.gov (United States)

    Gertner, E. R.

    1980-01-01

    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  3. Myocardial perfusion imaging with a cadmium zinc telluride-based gamma camera versus invasive fractional flow reserve

    Energy Technology Data Exchange (ETDEWEB)

    Mouden, Mohamed [Isala klinieken, Department of Cardiology, Zwolle (Netherlands); Isala klinieken, Department of Nuclear Medicine, Zwolle (Netherlands); Ottervanger, Jan Paul; Timmer, Jorik R. [Isala klinieken, Department of Cardiology, Zwolle (Netherlands); Knollema, Siert; Reiffers, Stoffer; Oostdijk, Ad H.J.; Jager, Pieter L. [Isala klinieken, Department of Nuclear Medicine, Zwolle (Netherlands); Boer, Menko-Jan de [University Medical Centre Nijmegen, Department of Cardiology, Nijmegen (Netherlands)

    2014-05-15

    Recently introduced ultrafast cardiac SPECT cameras with cadmium zinc telluride-based (CZT) detectors may provide superior image quality allowing faster acquisition with reduced radiation doses. Although the level of concordance between conventional SPECT and invasive fractional flow reserve (FFR) measurement has been studied, that between FFR and CZT-based SPECT is not yet known. Therefore, we aimed to assess the level of concordance between CZT SPECT and FFR in a large patient group with stable coronary artery disease. Both invasive FFR and myocardial perfusion imaging with a CZT-based SPECT camera, using Tc-tetrofosmin as tracer, were performed in 100 patients with stable angina and intermediate grade stenosis on invasive coronary angiography. A cut-off value of <0.75 was used to define abnormal FFR. The mean age of the patients was 64 ± 11 years, and 64 % were men. SPECT demonstrated ischaemia in 31 % of the patients, and 20 % had FFR <0.75. The concordance between CZT SPECT and FFR was 73 % on a per-patient basis and 79 % on a per-vessel basis. Discordant findings were more often seen in older patients and were mainly (19 %) the result of ischaemic SPECT findings in patients with FFR ≥0.75, whereas only 8 % had an abnormal FFR without ischaemia as demonstrated by CZT SPECT. Only 20 - 30 % of patients with intermediate coronary stenoses had significant ischaemia as assessed by CZT SPECT or invasive FFR. CZT SPECT showed a modest degree of concordance with FFR, which is comparable with previous results with conventional SPECT. Further investigations are particularly necessary in patients with normal SPECT and abnormal FFR, especially to determine whether these patients should undergo revascularization. (orig.)

  4. Downstream resource utilization following hybrid cardiac imaging with an integrated cadmium-zinc-telluride/64-slice CT device

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, Michael; Kaufmann, Philipp A. [University Hospital Zurich, Department of Radiology, Cardiac Imaging, Zurich (Switzerland); University of Zurich, Zurich Center for Integrative Human Physiology (ZIHP), Zurich (Switzerland); Ghadri, Jelena R.; Wolfrum, Mathias; Kuest, Silke M.; Pazhenkottil, Aju P.; Nkoulou, Rene N.; Herzog, Bernhard A.; Gebhard, Catherine; Fuchs, Tobias A.; Gaemperli, Oliver [University Hospital Zurich, Department of Radiology, Cardiac Imaging, Zurich (Switzerland)

    2012-03-15

    Low yield of invasive coronary angiography and unnecessary coronary interventions have been identified as key cost drivers in cardiology for evaluation of coronary artery disease (CAD). This has fuelled the search for noninvasive techniques providing comprehensive functional and anatomical information on coronary lesions. We have evaluated the impact of implementation of a novel hybrid cadmium-zinc-telluride (CZT)/64-slice CT camera into the daily clinical routine on downstream resource utilization. Sixty-two patients with known or suspected CAD were referred for same-day single-session hybrid evaluation with CZT myocardial perfusion imaging (MPI) and coronary CT angiography (CCTA). Hybrid MPI/CCTA images from the integrated CZT/CT camera served for decision-making towards conservative versus invasive management. Based on the hybrid images patients were classified into those with and those without matched findings. Matched findings were defined as the combination of MPI defect with a stenosis by CCTA in the coronary artery subtending the respective territory. All patients with normal MPI and CCTA as well as those with isolated MPI or CCTA finding or combined but unmatched findings were categorized as ''no match''. All 23 patients with a matched finding underwent invasive coronary angiography and 21 (91%) were revascularized. Of the 39 patients with no match, 5 (13%, p < 0.001 vs matched) underwent catheterization and 3 (8%, p < 0.001 vs matched) were revascularized. Cardiac hybrid imaging in CAD evaluation has a profound impact on patient management and may contribute to optimal downstream resource utilization. (orig.)

  5. Comparison between stress myocardial perfusion SPECT recorded with cadmium-zinc-telluride and Anger cameras in various study protocols

    Energy Technology Data Exchange (ETDEWEB)

    Verger, Antoine; Karcher, Gilles [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); INSERM U947, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Djaballah, Wassila [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); INSERM U947, Nancy (France); Fourquet, Nicolas [Clinique Pasteur, Toulouse (France); Rouzet, Francois; Le Guludec, Dominique [AP-HP, Hopital Bichat, Department of Nuclear Medicine, Paris (France); INSERM U 773 Inserm and Denis Diderot University, Paris (France); Koehl, Gregoire; Roch, Veronique [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Imbert, Laetitia [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Centre Alexis Vautrin, Department of Radiotherapy, Vandoeuvre (France); Poussier, Sylvain [INSERM U947, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Fay, Renaud [INSERM, Centre d' Investigation Clinique CIC-P 9501, Nancy (France); Marie, Pierre-Yves [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); INSERM U961, Nancy (France); Hopital de Brabois, CHU-Nancy, Medecine Nucleaire, Vandoeuvre-les-Nancy (France)

    2013-03-15

    The results of stress myocardial perfusion SPECT could be enhanced by new cadmium-zinc-telluride (CZT) cameras, although differences compared to the results with conventional Anger cameras remain poorly known for most study protocols. This study was aimed at comparing the results of CZT and Anger SPECT according to various study protocols while taking into account the influence of obesity. The study population, which was from three different institutions equipped with identical CZT cameras, comprised 276 patients referred for study using protocols involving {sup 201}Tl (n = 120) or {sup 99m}Tc-sestamibi injected at low dose at stress ({sup 99m}Tc-Low; stress/rest 1-day protocol; n = 110) or at high dose at stress ({sup 99m}Tc-High; rest/stress 1-day or 2-day protocol; n = 46). Each Anger SPECT scan was followed by a high-speed CZT SPECT scan (2 to 4 min). Agreement rates between CZT and Anger SPECT were good irrespective of the study protocol (for abnormal SPECT, {sup 201}Tl 92 %, {sup 99m}Tc-Low 86 %, {sup 99m}Tc-High 98 %), although quality scores were much higher for CZT SPECT with all study protocols. Overall correlations were high for the extent of myocardial infarction (r = 0.80) and a little lower for ischaemic areas (r = 0.72), the latter being larger on Anger SPECT (p < 0.001). This larger extent was mainly observed in 50 obese patients who were in the {sup 201}Tl or {sup 99m}Tc-Low group and in whom stress myocardial counts were particularly low with Anger SPECT (228 {+-} 101 kcounts) and dramatically enhanced with CZT SPECT (+279 {+-} 251 %). Concordance between the results of CZT and Anger SPECT is good regardless of study protocol and especially when excluding obese patients who have low-count Anger SPECT and for whom myocardial counts are dramatically enhanced on CZT SPECT. (orig.)

  6. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

    Science.gov (United States)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-19

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

  7. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing

    Science.gov (United States)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-01

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm-1 K-2), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

  8. Influence of proton-pump inhibitors on stomach wall uptake of 99mTc-tetrofosmin in cadmium-zinc-telluride SPECT myocardial perfusion imaging.

    Science.gov (United States)

    Mouden, Mohamed; Rijkee, Karlijn S; Schreuder, Nanno; Timmer, Jorik R; Jager, Pieter L

    2015-02-01

    Proton-pump inhibitors (PPIs) induce potentially interfering stomach wall activity in single-photon emission computed tomography myocardial perfusion imaging (SPECT-MPI) with technetium-99m ((99m)Tc)-sestamibi. However, no data are available for (99m)Tc-tetrofosmin. We assessed the influence of prolonged (>2 weeks) PPI use on the stomach wall uptake of (99m)Tc-tetrofosmin in patients referred for stress MPI with a cadmium-zinc-telluride-based SPECT camera and its relation with dyspepsia symptoms. Consecutive patients (n=127) underwent a 1-day adenosine stress-first SPECT-MPI with (99m)Tc-tetrofosmin, of whom 54 (43%) patients had been on PPIs for more than 2 weeks. Stomach wall activity was identified on stress SPECT using computed tomographic attenuation maps and was scored using a four-point grading scale into clinically relevant (scores 2 or 3) or nonrelevant (scores 0 or 1).Patients on PPIs had stomach wall uptake more frequently as compared with patients not using PPIs (22 vs. 7%, P=0.017). Dyspepsia was similar in both groups. Prolonged use of PPIs is associated with stomach wall uptake of (99m)Tc-tetrofosmin in stress cadmium-zinc-telluride-SPECT images. Gastric symptoms were not associated with stomach wall uptake.

  9. Impact of back-contact materials on performance and stability of cadmium sulfide/cadmium telluride solar cells

    Science.gov (United States)

    Demtsu, Samuel H.

    Thin-film CdTe based solar cells are one of the leading contenders for providing lowcost and pollution-free energy, The formation of a stable, low resistance, non-rectifying contact to p-CdTe thin-film is one of the major and critical challenges associated with this technology in the fabrication of efficient and stable solar cells. The premise of this thesis is a systematic study of the impact of back-contact materials on the initial performance and the degradation of CdS/CdTe solar cells. Two different back-contact structures that incorporate Cu as a key element are investigated in this study: (a) Cu1.4Te:HgTe-doped graphite and (b) evaporated-Cu back contacts. The effect of Cu inclusion is not limited to the back-contact layer where it is deposited. Cu is a known fast diffuser in p-CdTe, and therefore, a significant amount of Cu reaches both the CdTe and US layers. Hence, the effect of the presence of Cu on the individual layers: back-contact, the absorber (CdTe), and the window (CdS) layers is discussed respectively. The effect of different metals used to form the current-carrying electrode following the Cu layer is also evaluated. Devices are studied through current-voltage (JV) measurements at different temperatures and intensities, quantum efficiency (QE) measurements under light and voltage bias, capacitance-voltage (CV), drive-level-capacitance-profiling (DLCP), and time-resolved photoluminescence (TRPL) measurements. Numerical simulation is also used to reproduce and explain some of the experimental results. In devices made without Cu, a current-limiting effect, rollover (distortion) in the current-voltage characteristic, was observed. With the inclusion of a small amount of Cu (5-nm), however, the distortion disappeared, and higher FF was obtained. The performance of these devices was comparable to devices made with the standard Cu-doped graphite paste contacts when the same CdTe absorber is used. Small amount of Cu (5-20 nm) partially diffused into the

  10. Size and temperature dependence of the photoluminescence properties of NIR emitting ternary alloyed mercury cadmium telluride quantum dots

    Science.gov (United States)

    Jagtap, Amardeep M.; Chatterjee, Abhijit; Banerjee, Arup; Babu Pendyala, Naresh; Koteswara Rao, K. S. R.

    2016-04-01

    Exciton-phonon coupling and nonradiative relaxation processes have been investigated in near-infrared (NIR) emitting ternary alloyed mercury cadmium telluride (CdHgTe) quantum dots. Organically capped CdHgTe nanocrystals of sizes varying from 2.5-4.2 nm have been synthesized where emission is in the NIR region of 650-855 nm. Temperature-dependent (15-300 K) photoluminescence (PL) and the decay dynamics of PL at 300 K have been studied to understand the photophysical properties. The PL decay kinetics shows the transition from triexponential to biexponential on increasing the size of the quantom dots (QDs), informing the change in the distribution of the emitting states. The energy gap is found to be following the Varshni relation with a temperature coefficient of 2.1-2.8  ×  10-4 eV K-1. The strength of the electron-phonon coupling, which is reflected in the Huang and Rhys factor S, is found in the range of 1.17-1.68 for QDs with a size of 2.5-4.2 nm. The integrated PL intensity is nearly constant until 50 K, and slowly decreases up to 140 K, beyond which it decreases at a faster rate. The mechanism for PL quenching with temperature is attributed to the presence of nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states. At temperatures of different region (<140 K and 140-300 K), traps of low (13-25 meV) and high (65-140 meV) activation energies seem to be controlling the quenching of the PL emission. The broadening of emission linewidth is found to due to exciton-acoustic phonon scattering and exciton-longitudinal optical (LO) phonon coupling. The exciton-acoustic phonon scattering coefficient is found to be enhanced up to 55 μeV K-1 due to a stronger confinement effect. These findings give insight into understanding the photophysical properties of CdHgTe QDs and pave the way for their possible applications in the fields of NIR photodetectors and other optoelectronic devices.

  11. Design study of a high-resolution breast-dedicated PET system built from cadmium zinc telluride detectors

    Energy Technology Data Exchange (ETDEWEB)

    Peng Hao; Levin, Craig S, E-mail: haopeng@stanford.ed, E-mail: cslevin@stanford.ed [Department of Radiology, Molecular Imaging Program, Stanford University School of Medicine, Stanford, CA 94305 (United States)

    2010-05-07

    We studied the performance of a dual-panel positron emission tomography (PET) camera dedicated to breast cancer imaging using Monte Carlo simulation. The proposed system consists of two 4 cm thick 12 x 15 cm{sup 2} area cadmium zinc telluride (CZT) panels with adjustable separation, which can be put in close proximity to the breast and/or axillary nodes. Unique characteristics distinguishing the proposed system from previous efforts in breast-dedicated PET instrumentation are the deployment of CZT detectors with superior spatial and energy resolution, using a cross-strip electrode readout scheme to enable 3D positioning of individual photon interaction coordinates in the CZT, which includes directly measured photon depth-of-interaction (DOI), and arranging the detector slabs edge-on with respect to incoming 511 keV photons for high photon sensitivity. The simulation results show that the proposed CZT dual-panel PET system is able to achieve superior performance in terms of photon sensitivity, noise equivalent count rate, spatial resolution and lesion visualization. The proposed system is expected to achieve {approx}32% photon sensitivity for a point source at the center and a 4 cm panel separation. For a simplified breast phantom adjacent to heart and torso compartments, the peak noise equivalent count (NEC) rate is predicted to be {approx}94.2 kcts s{sup -1} (breast volume: 720 cm{sup 3} and activity concentration: 3.7 kBq cm{sup -3}) for a {approx}10% energy window around 511 keV and {approx}8 ns coincidence time window. The system achieves 1 mm intrinsic spatial resolution anywhere between the two panels with a 4 cm panel separation if the detectors have DOI resolution less than 2 mm. For a 3 mm DOI resolution, the system exhibits excellent sphere resolution uniformity ({sigma}{sub rms}/mean) {<=} 10%) across a 4 cm width FOV. Simulation results indicate that the system exhibits superior hot sphere visualization and is expected to visualize 2 mm diameter spheres

  12. Design study of a high-resolution breast-dedicated PET system built from cadmium zinc telluride detectors

    Science.gov (United States)

    Peng, Hao; Levin, Craig S.

    2010-05-01

    We studied the performance of a dual-panel positron emission tomography (PET) camera dedicated to breast cancer imaging using Monte Carlo simulation. The proposed system consists of two 4 cm thick 12 × 15 cm2 area cadmium zinc telluride (CZT) panels with adjustable separation, which can be put in close proximity to the breast and/or axillary nodes. Unique characteristics distinguishing the proposed system from previous efforts in breast-dedicated PET instrumentation are the deployment of CZT detectors with superior spatial and energy resolution, using a cross-strip electrode readout scheme to enable 3D positioning of individual photon interaction coordinates in the CZT, which includes directly measured photon depth-of-interaction (DOI), and arranging the detector slabs edge-on with respect to incoming 511 keV photons for high photon sensitivity. The simulation results show that the proposed CZT dual-panel PET system is able to achieve superior performance in terms of photon sensitivity, noise equivalent count rate, spatial resolution and lesion visualization. The proposed system is expected to achieve ~32% photon sensitivity for a point source at the center and a 4 cm panel separation. For a simplified breast phantom adjacent to heart and torso compartments, the peak noise equivalent count (NEC) rate is predicted to be ~94.2 kcts s-1 (breast volume: 720 cm3 and activity concentration: 3.7 kBq cm-3) for a ~10% energy window around 511 keV and ~8 ns coincidence time window. The system achieves 1 mm intrinsic spatial resolution anywhere between the two panels with a 4 cm panel separation if the detectors have DOI resolution less than 2 mm. For a 3 mm DOI resolution, the system exhibits excellent sphere resolution uniformity (σrms/mean) <= 10%) across a 4 cm width FOV. Simulation results indicate that the system exhibits superior hot sphere visualization and is expected to visualize 2 mm diameter spheres with a 5:1 activity concentration ratio within roughly 7 min

  13. Role of the copper-oxygen defect in cadmium telluride solar cells

    Science.gov (United States)

    Corwine, Caroline R.

    Thin-film CdTe is one of the leading materials used in photovoltaic (PV) solar cells. One way to improve device performance and stability is through understanding how various device processing steps alter defect states in the CdTe layer. Photoluminescence (PL) studies can be used to examine radiative defects in materials. This study uses low-temperature PL to probe the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdTe was reproduced in single-crystal (sX) CdTe by systematic incorporation of known impurities in the thin-film growth process, hence demonstrating that both copper and oxygen were necessary for its formation. Polycrystalline (pX) thin-film glass/SnO2:F/CdS/CdTe structures were examined. The CdTe layer was grown via close-spaced sublimation (CSS), vapor transport deposition (VTD), and physical vapor deposition (PVD). After CdTe deposition, followed by a standard CdC12 treatment and a ZnTe:Cu back contact, a PL peak was seen at ˜1.46 eV from the free back surface of all samples (1.456 eV for CSS and PVD, 1.460-1.463 eV for VTD). However, before the Cu-containing contact was added, this peak was not seen from the front of the CdTe (the CdS/CdTe junction region) in any device with CdTe thickness greater than 4 mum. The CdCl2 treatment commonly used to increase CdTe grain size did not enhance or reduce the peak at ˜1.46 eV relative to the rest of the PL spectrum. When the Cu-containing contact was applied, the PL spectra from both the front and back of the CdTe exhibited the peak at 1.456 eV. The PL peak at ˜1.46 eV was present in thin-film CdTe after deposition, when the dominant impurities are expected to be both Cu from the CdTe source material and O introduced in the chamber during growth to assist in CdTe film density. Since Cu and/or O appeared to be involved in this defect, PL studies were done with sX CdTe to distinguish between the separate effects of Cu or O and the combined effect of Cu and O

  14. Photoluminescence and extended X-ray absorption fine structure studies on cadmium telluride material

    Science.gov (United States)

    Liu, Xiangxin

    The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of this material such as its good band-gap match to the solar spectrum, ease of fabrication of stoichiometric films, and easy grain boundary passivation make it an important candidate for large area, thin-film solar cells. However, there are several poorly understood processing steps that are commonly utilized in cell fabrication. One of these is a CdCl2 treatment near 400°C in the presence of oxygen, which can improve the cell efficiency a factor of two or more. Another factor is the role of copper in cell performance. In high performance CdS/CdTe thin-film solar cells, copper is usually included in the fabrication of low-resistance back contacts to obtain heavy p-type doping of the absorber CdTe at the contact. However, most of the copper is not electrically active. For example, secondary ion mass spectroscopy (SIMS) on typical CdTe cells has shown Cu concentrations of 1019 atoms/cm3 and even higher, although capacitance-voltage (C-V) measurements indicate typical ionized acceptor levels on the order of 1014/cm 3. Thus, there is great interest in the location and role of this inactive copper in CdTe photovoltaic (PV) devices. In this thesis, I will describe results obtained on magnetron-sputtered CdTe films that were diffused with copper following the procedure used for creating a cell back contact. Extended X-ray Absorption Fine Structure (EXAFS) measurements identified the chemical environment of the majority of the copper and show major differences depending on whether the CdTe film has been treated with chloride prior to the Cu diffusion. The EXAFS data indicate that the Cu chemistry is strongly affected by the chloride treatments---predominantly Cu2Te when Cu was diffused into the as-deposited CdTe film, but a Cu2O environment when Cu was diffused after

  15. Thermoelectric properties of n-type nanocrystalline bismuth-telluride-based thin films deposited by flash evaporation

    Science.gov (United States)

    Takashiri, M.; Takiishi, M.; Tanaka, S.; Miyazaki, K.; Tsukamoto, H.

    2007-04-01

    The thermal conductivity of n-type nanocrystalline bismuth-telluride-based thin films (Bi2.0Te2.7Se0.3) is investigated by a differential 3ω method at room temperature. The nanocrystalline thin films are grown on a glass substrate by a flash evaporation method, followed by hydrogen annealing at 250 °C. The structure of the thin films is studied by means of atomic force microscopy, x-ray diffraction, and energy-dispersive x-ray spectroscopy. The thin films exhibit an average grain size of 60 nm and a cross-plane thermal conductivity of 0.8 W/m K. The in-plane electrical conductivity and in-plane Seebeck coefficient are also investigated. Assuming that the in-plane thermal conductivity of the thin films is identical to that of the cross-plane direction, the in-plane figure of merit of the thin films is estimated to be ZT =0.7. As compared with a sintered bulk sample with average grain size of 30 μm and nearly the same composition as the thin films, the nanocrystalline thin films show approximately a 50% reduction in the thermal conductivity, but the electrical conductivity also falls 40%. The reduced thermal and electrical conductivities are attributed to increased carrier trapping and scattering in the nanocrystalline film.

  16. Investigation of the Internal Electric Field in Cadmium Zinc Telluride Detectors Using the Pockels Effect and the Analysis of Charge Transients

    Science.gov (United States)

    Groza, Michael; Krawczynski, Henic; Garson, Alfred, III; Martin, Jerrad W.; Lee, Kuen; Li, Qiang; Beilicke, Matthias; Cui, Yunlong; Buliga, Vladimir; Guo, Mingsheng; hide

    2010-01-01

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  17. Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells

    Science.gov (United States)

    Marinskiy, Dmitriy Nikolaevich

    1998-12-01

    One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga)Sesb2 solar cells. The study of the optical and structural properties of CdS films deposited by close spaced sublimation as well as their influence on CdS/CdTe solar cell performance is part of the CdTe solar cell program at the University of South Florida. CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in Hsb2 ambient, in CdClsb2 atmosphere, and in atmosphere with small amounts of oxygen. A special annealing chamber was built to carry out the annealing experiments in the presence of CdClsb2 vapor and oxygen. Several CSS chambers were assembled to study the influence of various process parameters simultaneously and validate the results. Results of scanning electron microscopy and photoluminescence measurements have been used as the primary characterization techniques. X-ray diffraction, electron microprobe analysis, and transmission measurements have also been carried out. It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance. CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have been characterized by light and dark current-voltage (I-V) measurements. Based on the I-V results samples were selected for Quantum Efficiency (QE), and I-V-T measurements. The goal of this project was to understand what properties of CdS are important for the formation of a good electrical CdS/CdTe junction and high efficiency solar cells. It was found that passivation of the CdS/CdTe interface is essential to obtain efficient devices. The passivation can be achieved by promoting mixing at the interface or by performing a heat treatment of the CdS surface prior to the CdTe deposition. For the latter case no noticeable intermixing at the CdS/CdTe interface occurs. Therefore, it is suggested that the CdS/CdTe interface is the most critical part of the device and the condition of the CdS surface just before CdTe deposition is one of the factors controlling its formation. To date, the best device has shown an efficiency of 15.1% as verified at the National Renewable Energy Laboratory. It is the highest efficiency reported for an all CSS fabricated solar cell. The best all CSS device fabricated on LOF glass substrate demonstrated an efficiency of 14.3%, which is a new record for the USF solar cell laboratory.

  18. Growth mechanism and strain relaxation in zinc selenide and cadmium telluride/zinc telluride semiconductor thin films

    Science.gov (United States)

    Wei, Hsiang-Yi

    The application of II--VI semiconductor devices such as blue-green light emitters (ZnSe-based materials) and HgCdTe infrared detectors are limited by the high density of defects and lack of large size substrates that are lattice matched and chemically compatible with the films. By growing a single thick buffer layer or a composite buffer structure of dissimilar materials can lead to a final top layer that is structurally and chemically compatible with the active layer of the device. Low defect density and flat surface morphology are the basic requirements for an applicable buffer layer. In this work, transmission electron microscopy is used to investigate the crystalline structure and defect generation mechanism in buffer layers for the growth of ZnSe-based and HgCdTe films. We investigate the interface chemistry, defect density, and growth mechanism of ZnSe films grown on GaAs substrates with different surface processing techniques. Undesirable high density of funnel defects (˜1010 cm-2) are always observed when the growth is performed on the epi-ready GaAs. We also observe that Sb can act as a surfactant and promote a truly layer-by-layer growth mode when the ZnSe film is grown on Sb-stabilized GaAs substrates. The defect density can be reduced to values as low as in the low 103 cm-2 range, which is the lowest defect density ever reported for ZnSe films. Moreover, the ZnSe surface exhibits a characteristic brick-like pattern for all of the substrate preparation methods used (except for Sb-stabilized GaAs) and the thickness of the ZnSe epilayers for films grown at ˜280--330°C. At a much higher growth temperature (410°C), a corrugated surface forms with high periodicity along the [110] direction. We propose a kinetics-limited surface roughness mechanism for the ZnSe films based on a competition of nucleation of 2D islands followed by step evolution. In the CdTe/ZnTe/Si epitaxial system, we investigated the influence of different surface precursors on the growth mechanism and defect density in the films. For As---precursor on the Si surface, Te adsorption on the terraces is inhibited and its migration to the step edges is enhanced. Therefore, the growth is expected to proceed in a step-flow growth mode. A strain relaxation mechanism including misfit dislocation generation, twin formation, and crystal tilt is proposed to account for the large lattice mismatch (f = 12.3%) in this system.

  19. The influence of reaction times on structural, optical and luminescence properties of cadmium telluride nanoparticles prepared by wet-chemical process

    Energy Technology Data Exchange (ETDEWEB)

    Kiprotich, Sharon, E-mail: KiprotichS@qwa.ufs.ac.za [Department of Physics, University of the Free State (QwaQwa campus), Private Bag X-13, Phuthaditjhaba 9866 (South Africa); Dejene, Francis B.; Ungula, Jatani [Department of Physics, University of the Free State (QwaQwa campus), Private Bag X-13, Phuthaditjhaba 9866 (South Africa); Onani, Martin O. [Departments of Chemistry, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa)

    2016-01-01

    This paper explains one pot synthesis of type II water soluble L-cysteine capped cadmium telluride (CdTe) core shell quantum dots using cadmium acetate, potassium tellurite and L-cysteine as the starting materials. The reaction was carried out in a single three necked flask without nitrogen under reflux at 100 °C. Results from PL show a sharp absorption excitonic band edge of the CdTe core with respect to the core shell which loses its shoulder during the growth of the shell on the core. The PL spectra indicate a drastic shift in emission window of the core which is simultaneously accompanied by an increase in emission intensity. X-ray diffraction pattern confirms the formation of hexagonal phase for all samples. Some difference in absorption edges were observed due to varying synthesis time of CdTe NPs. The position of the absorption band is observed to shift towards the lower wavelength side for shorter durations of synthesis.

  20. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  1. Determination of the Origin of Crystal Orientation for Nanocrystalline Bismuth Telluride-Based Thin Films Prepared by Use of the Flash Evaporation Method

    Science.gov (United States)

    Takashiri, M.; Tanaka, S.; Miyazaki, K.

    2014-06-01

    We have investigated the origin of crystal orientation for nanocrystalline bismuth telluride-based thin films. Thin films of p-type bismuth telluride antimony (Bi-Te-Sb) and n-type bismuth telluride selenide (Bi-Te-Se) were fabricated by a flash evaporation method, with exactly the same deposition conditions except for the elemental composition of the starting powders. For p-type Bi-Te-Sb thin films the main x-ray diffraction (XRD) peaks were from the c-axis (Σ{00l}/Σ{ hkl} = 0.88) whereas n-type Bi-Te-Se thin films were randomly oriented (Σ{00l}/Σ{ hkl} = 0.40). Crystal orientation, crystallinity, and crystallite size were improved for both types of thin film by sintering. For p-type Bi-Te-Sb thin films, especially, high-quality structures were obtained compared with those of n-type Bi-Te-Se thin films. We also estimated the thermoelectric properties of the as-grown and sintered thin films. The power factor was enhanced by sintering; maximum values were 34.9 μW/cm K2 for p-type Bi-Te-Sb thin films at a sintering temperature of 300°C and 23.9 μW/cm K2 for n-type Bi-Te-Se thin films at a sintering temperature of 350°C. The exact mechanisms of film growth are not yet clear but we deduce the crystal orientation originates from the size of nano-clusters generated on the tungsten boat during flash evaporation.

  2. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Science.gov (United States)

    Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

    2017-06-01

    p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p-n modules of bismuth telluride without any doping process.

  3. Compositional analysis of electrodeposited bismuth telluride thermoelectric thin films using combined electrochemical quartz crystal microgravimetry--stripping voltammetry.

    Science.gov (United States)

    Ham, Sunyoung; Jeon, Soyeon; Lee, Ungki; Park, Minsoon; Paeng, Ki-Jung; Myung, Noseung; Rajeshwar, Krishnan

    2008-09-01

    Bismuth telluride (Bi 2Te 3 ) is a benchmark material for thermoelectric power generation and cooling applications. Electrodeposition is a versatile technique for preparing thin films of this material; however, it affords films of variable composition depending on the preparation history. A simple and rapid assay of electrodeposited films, therefore, has both fundamental and practical importance. In this study, a new protocol for the electroanalysis of Bi 2Te 3 thin films is presented by combining the two powerful and complementary techniques of electrochemical quartz crystal microgravimetry (EQCM) and stripping voltammetry. First, any free (and excess) tellurium in the electrodeposited film was reduced to soluble Te ( 2- ) species by scanning to negative potentials in a 0.1 M Na 2SO 4 electrolyte, and the accompanying frequency increase (mass loss) was used to determine the content of free tellurium. The film was again subjected to cathodic stripping in the same medium (to generate Bi (0) and soluble Te (2-) from the Bi 2 Te 3 film component of interest), and the EQCM frequency change was used to determine the content of chemically bound Te in the Bi 2Te 3 thin film and thereby the compound stoichiometry. Finally, the EQCM frequency change during Bi oxidation to Bi (3+) and the difference between total Bi and Bi in Bi 2Te 3 resulted in the assay of free (excess) Bi in the electrodeposited film. Problems associated with the chemical/electrochemical stability of the free Bi species were circumvented by a flow electroanalysis approach. Data are also presented on the sensitivity of electrodeposited Bi 2Te 3 film composition to the electrodeposition potential. This newly developed method can be used for the compositional analysis of other thermoelectric thin-film material candidates in general.

  4. Investigation of quad-energy high-rate photon counting for X-ray computed tomography using a cadmium telluride detector.

    Science.gov (United States)

    Matsukiyo, Hiroshi; Sato, Eiichi; Oda, Yasuyuki; Yamaguchi, Satoshi; Sato, Yuichi; Hagiwara, Osahiko; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

    2017-09-10

    To obtain four kinds of tomograms at four different X-ray energy ranges simultaneously, we have constructed a quad-energy (QE) X-ray photon counter with a cadmium telluride (CdTe) detector and four sets of comparators and microcomputers (MCs). X-ray photons are detected using the CdTe detector, and the event pulses produced using amplifiers are sent to four comparators simultaneously to regulate four threshold energies of 20, 33, 50 and 65keV. Using this counter, the energy ranges are 20-33, 33-50, 50-65 and 65-100keV; the maximum energy corresponds to the tube voltage. We performed QE computed tomography (QE-CT) at a tube voltage of 100kV. Using a 0.5-mm-diam lead pinhole, four tomograms were obtained simultaneously at four energy ranges. K-edge CT using iodine and gadolinium media was carried out utilizing two energy ranges of 33-50 and 50-65keV, respectively. At a tube voltage of 100kV and a current of 60 μA, the count rate was 15.2 kilocounts per second (kcps), and the minimum count rates after penetrating objects in QE-CT were regulated to approximately 2 kcps by the tube current. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Characterization of a sub-assembly of 3D position sensitive cadmium zinc telluride detectors and electronics from a sub-millimeter resolution PET system

    Science.gov (United States)

    Abbaszadeh, Shiva; Gu, Yi; Reynolds, Paul D.; Levin, Craig S.

    2016-09-01

    Cadmium zinc telluride (CZT) offers key advantages for small animal positron emission tomography (PET), including high spatial and energy resolution and simple metal deposition for fabrication of very small pixel arrays. Previous studies have investigated the intrinsic spatial, energy, and timing resolution of an individual sub-millimeter resolution CZT detector. In this work we present the first characterization results of a system of these detectors. The 3D position sensitive dual-CZT detector module and readout electronics developed in our lab was scaled up to complete a significant portion of the final PET system. This sub-system was configured as two opposing detection panels containing a total of twelve 40~\\text{mm}× 40~\\text{mm}× 5 mm monolithic CZT crystals for proof of concept. System-level characterization studies, including optimizing the trigger threshold of each channel’s comparators, were performed. 68Ge and 137Cs radioactive isotopes were used to characterize the energy resolution of all 468 anode channels in the sub-system. The mean measured global 511 keV photopeak energy resolution over all anodes was found to be 7.35+/- 1.75 % FWHM after correction for photon interaction depth-dependent signal variation. The measured global time resolution was 37 ns FWHM, a parameter to be further optimized, and the intrinsic spatial resolution was 0.76 mm FWHM.

  6. Nuclear myocardial perfusion imaging with a novel cadmium-zinc-telluride detector SPECT/CT device: first validation versus invasive coronary angiography

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, Michael; Kaufmann, Philipp A. [University Hospital Zurich, Department of Radiology, Cardiac Imaging, Zurich (Switzerland); University of Zurich, Zurich Center for Integrative Human Physiology (ZIHP), Zurich (Switzerland); Ghadri, Jelena R.; Kuest, Silke M.; Pazhenkottil, Aju P.; Wolfrum, Mathias; Nkoulou, Rene N.; Goetti, Robert; Gaemperli, Oliver [University Hospital Zurich, Department of Radiology, Cardiac Imaging, Zurich (Switzerland)

    2011-11-15

    We evaluated the diagnostic accuracy of attenuation corrected nuclear myocardial perfusion imaging (MPI) with a novel hybrid single photon emission computed tomography (SPECT)/CT device consisting of an ultrafast dedicated cardiac gamma camera with cadmium-zinc-telluride (CZT) solid-state semiconductor detectors integrated onto a multislice CT scanner to detect coronary artery disease (CAD). Invasive coronary angiography served as the standard of reference. The study population included 66 patients (79% men; mean age 63 {+-} 11 years) who underwent 1-day {sup 99m}Tc-tetrofosmin pharmacological stress/rest examination and angiography within 3 months. Sensitivity, specificity, positive predictive value (PPV) and negative predictive value (NPV) as well as accuracy of the CT X-ray based attenuation corrected CZT MPI for detection of CAD ({>=}50% luminal narrowing) was calculated on a per-patient basis. The prevalence of angiographic CAD in the study population was 82%. Sensitivity, specificity, PPV, NPV and accuracy were 87, 67, 92, 53 and 83%, respectively. In this first report on CZT SPECT/CT MPI comparison versus angiography we confirm a high accuracy for detection of angiographically documented CAD. (orig.)

  7. Performance of cardiac cadmium-zinc-telluride gamma camera imaging in coronary artery disease: a review from the cardiovascular committee of the European Association of Nuclear Medicine (EANM)

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, Denis [CHU Caen and Normandy University, Department of Nuclear Medicine, Caen (France); Normandy University, Caen (France); Marie, Pierre-Yves [University of Lorraine, Faculty of Medicine, Nancyclotep Experimental Imaging Platform, Nancy (France); University of Lorraine, Faculty of Medicine, CHU Nancy, Department of Nuclear Medicine, Nancy (France); University of Lorraine, Faculty of Medicine, Nancy (France); Ben-Haim, Simona [University College London, University College Hospital, Institute of Nuclear Medicine, London (United Kingdom); Chaim Sheba Medical Center, Department of Nuclear Medicine, Ramat Gan (Israel); Rouzet, Francois [University Hospital of Paris-Bichat, UMR 1148, Inserm et Paris Diderot-Paris 7 University Paris, Department of Nuclear Medicine, Paris (France); UMR 1148, Inserm and Paris Diderot-Paris 7 University Paris, Paris (France); Songy, Bernard [Centre Cardiologique du Nord, Saint-Denis (France); Giordano, Alessandro [Institute of Nuclear Medicine, Catholic University of Sacred Heart, Largo A. Gemelli, Department of Bioimages and Radiological Sciences, Rome (Italy); Gimelli, Alessia [Fondazione Toscana Gabriele Monasterio, Pisa (Italy); Hyafil, Fabien [Bichat University Hospital, Assistance Publique - Hopitaux de Paris, UMR 1148, Inserm and Paris Diderot-Paris 7 University, Department of Nuclear Medicine, Paris (France); Sciagra, Roberto [University of Florence, Nuclear Medicine Unit, Department of Experimental and Clinical Biomedical Sciences, Florence (Italy); Bucerius, Jan [Maastricht University Medical Center, Maastricht University Medical Center, Department of Nuclear Medicine, Maastricht (Netherlands); Maastricht University Medical Center, Cardiovascular Research Institute Maastricht (CARIM), Maastricht (Netherlands); University Hospital RWTH Aachen, Department of Nuclear Medicine, Aachen (Germany); Verberne, Hein J. [Academic Medical Center, Department of Nuclear Medicine, Amsterdam (Netherlands); Slart, Riemer H.J.A. [University Medical Center Groningen, Department of Nuclear Medicine and Molecular Imaging, Groningen (Netherlands); University of Twente, Faculty of Science and Technology, Department of Biomedical Photonic Imaging, Enschede (Netherlands); Lindner, Oliver [Institute of Radiology, Nuclear Medicine and Molecular Imaging, Heart and Diabetes Center NRW, Bad Oeynhausen (Germany); Collaboration: Cardiovascular Committee of the European Association of Nuclear Medicine (EANM)

    2016-12-15

    The trade-off between resolution and count sensitivity dominates the performance of standard gamma cameras and dictates the need for relatively high doses of radioactivity of the used radiopharmaceuticals in order to limit image acquisition duration. The introduction of cadmium-zinc-telluride (CZT)-based cameras may overcome some of the limitations against conventional gamma cameras. CZT cameras used for the evaluation of myocardial perfusion have been shown to have a higher count sensitivity compared to conventional single photon emission computed tomography (SPECT) techniques. CZT image quality is further improved by the development of a dedicated three-dimensional iterative reconstruction algorithm, based on maximum likelihood expectation maximization (MLEM), which corrects for the loss in spatial resolution due to line response function of the collimator. All these innovations significantly reduce imaging time and result in a lower patient's radiation exposure compared with standard SPECT. To guide current and possible future users of the CZT technique for myocardial perfusion imaging, the Cardiovascular Committee of the European Association of Nuclear Medicine, starting from the experience of its members, has decided to examine the current literature regarding procedures and clinical data on CZT cameras. The committee hereby aims (1) to identify the main acquisitions protocols; (2) to evaluate the diagnostic and prognostic value of CZT derived myocardial perfusion, and finally (3) to determine the impact of CZT on radiation exposure. (orig.)

  8. Time resolved long-wave infrared laser-induced breakdown spectroscopy of inorganic energetic materials by a rapid mercury-cadmium-telluride linear array detection system.

    Science.gov (United States)

    Yang, Clayton S-C; Jin, Feng; Trivedi, Sudhir; Brown, Eiei; Hommerich, Uwe; Khurgin, Jacob B; Samuels, Alan C

    2016-11-10

    A mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5 s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared region (LWIR, ∼5.6-10 μm) was recently developed. Similar to the conventional ultraviolet-visible LIBS, a broadband emission spectrum of condensed phase samples covering a 5.6-10 μm spectral region could be acquired from just a single laser-induced micro-plasma. Intense and distinct atomic and molecular LWIR emission signatures of various solid inorganic energetic materials were readily observed and identified. Time resolved emissions of inorganic energetic materials were studied to assess the lifetimes of LWIR atomic and molecular emissions. The LWIR atomic emissions generally decayed fast on the scale of tens of microseconds, while the molecular signature emissions from target molecules excited by the laser-induced plasma appeared to be very long lived (∼millisecond). The time dependence of emission intensities and peak wavelengths of these signature emissions gave an insight into the origin and the environment of the emitting target species. Moreover, observed lifetimes of these LWIR emissions can be utilized for further optimization of the signal quality and detection limits of this technique.

  9. Investigation of dual-energy X-ray photon counting using a cadmium telluride detector with dual-energy selection electronics

    Science.gov (United States)

    Sato, Eiichi; Kosuge, Yoshiyuki; Yamanome, Hayato; Mikata, Akiko; Miura, Tatsuya; Oda, Yasuyuki; Ishii, Tomotaka; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Watanabe, Manabu; Kusachi, Shinya

    2017-01-01

    To obtain two kinds of tomograms at two different X-ray energy ranges simultaneously, we have developed a dual-energy X-ray photon counter with a cadmium telluride (CdTe) detector and two energy-selecting devices (ESDs). The ESD consists of two comparators and a microcomputer (MC). X-ray photons are detected using the CdTe detector, and the event pulses from a shaping amplifier are sent to two ESDs simultaneously to determine two energy ranges. X-ray photons in the two ranges are counted using the MCs, and the logical pulses from the MCs are input to frequency-to-voltage converters (FVCs). The outputs from the two FVCs are input to a personal computer through an analog-to-digital converter to carry out dual-energy computed tomography. The tube voltage and current were 80 kV and 8.5 μA, respectively. Two tomograms were obtained simultaneously with two energy ranges. K-edge CT using iodine and gadolinium media was carried out utilizing two energy ranges of 33-45 and 50-65 keV, respectively. The maximum count rate was 6.8 kilocounts per second with energies ranging from 10 to 80 keV, and the exposure time for tomography was 9.8 min.

  10. First principles phase transition, elastic properties and electronic structure calculations for cadmium telluride under induced pressure: density functional theory, LDA, GGA and modified Becke-Johnson potential

    Science.gov (United States)

    Kabita, Kh; Maibam, Jameson; Indrajit Sharma, B.; Brojen Singh, R. K.; Thapa, R. K.

    2016-01-01

    We report first principles phase transition, elastic properties and electronic structure for cadmium telluride (CdTe) under induced pressure in the light of density functional theory using the local density approximation (LDA), generalised gradient approximation (GGA) and modified Becke-Johnson (mBJ) potential. The structural phase transition of CdTe from a zinc blende (ZB) to a rock salt (RS) structure within the LDA calculation is 2.2 GPa while that within GGA is found to be at 4 GPa pressure with a volume collapse of 20.9%. The elastic constants and parameters (Zener anisotropy factor, Shear modulus, Poisson’s ratio, Young’s modulus, Kleinmann parameter and Debye’s temperature) of CdTe at different pressures of both the phases have been calculated. The band diagram of the CdTe ZB structure shows a direct band gap of 1.46 eV as predicted by mBJ calculation which gives better results in close agreement with experimental results as compared to LDA and GGA. An increase in the band gap of the CdTe ZB phase is predicted under induced pressure while the metallic nature is retained in the CdTe RS phase.

  11. High-efficiency cadmium and zinc-telluride-based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  12. Real-time breath-hold triggering of myocardial perfusion imaging with a novel cadmium-zinc-telluride detector gamma camera

    Energy Technology Data Exchange (ETDEWEB)

    Buechel, Ronny R.; Pazhenkottil, Aju P.; Herzog, Bernhard A.; Husmann, Lars; Nkoulou, Rene N.; Burger, Irene A.; Valenta, Ines; Wyss, Christophe A.; Ghadri, Jelena R. [University Hospital Zurich, Cardiac Imaging, Zurich (Switzerland); Kaufmann, Philipp A. [University Hospital Zurich, Cardiac Imaging, Zurich (Switzerland); University of Zurich, Zurich Center for Integrative Human Physiology (ZIHP), Zurich (Switzerland)

    2010-10-15

    The aim of this study was to assess the ability of real-time breath-hold-triggered myocardial perfusion imaging (MPI) using a novel cadmium-zinc-telluride (CZT) gamma camera to discriminate artefacts from true perfusion defects. A group of 40 patients underwent a 1-day {sup 99m}Tc-tetrofosmin pharmacological stress/rest imaging protocol on a conventional dual detector SPECT gamma camera with and without attenuation correction (AC), immediately followed by scanning on an ultrafast CZT camera with and without real-time breath-hold triggering (instead of AC) by intermittent scanning confined to breath-hold at deep inspiration (using list mode acquisition). We studied the use of breath-hold triggering on the CZT camera and its ability to discriminate artefacts from true perfusion defects using AC SPECT MPI as the reference standard. Myocardial tracer uptake (percent of maximum) from CZT was compared to AC SPECT MPI by intraclass correlation and by calculating Bland-Altman limits of agreement. AC of SPECT MPI identified 19 apparent perfusion defects as artefacts. Of these, 13 were correctly identified and 4 were partially unmasked (decrease in extent and/or severity) by breath-hold triggering of the CZT scan. All perfusion defects verified by SPECT MPI with AC were appropriately documented by CZT with and without breath-hold triggering. This was supported by the quantitative analysis, as the correlation (r) of myocardial tracer uptake between CZT and AC SPECT improved significantly from 0.81 to 0.90 (p<0.001) when applying breath-hold triggering. Similarly, Bland-Altman limits of agreement were narrower for CZT scans with breath-hold triggering. This novel CZT camera allows real-time breath-hold triggering as a potential alternative to AC to assist in the discrimination of artefacts from true perfusion defects. (orig.)

  13. SemiSPECT: a small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays.

    Science.gov (United States)

    Kim, Hyunki; Furenlid, Lars R; Crawford, Michael J; Wilson, Donald W; Barber, H Bradford; Peterson, Todd E; Hunter, William C J; Liu, Zhonglin; Woolfenden, James M; Barrett, Harrison H

    2006-02-01

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cm x 2.7 cm x -0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64 x 64 pixel array by photolithography. The ASIC is attached to the bottom of the CZT crystal by indium-bump bonding. A bias voltage of -180 V is applied to the continuous electrode. The eight detectors are arranged in an octagonal lead-shielded ring. Each pinhole in the eight-pinhole aperture placed at the center of the ring is matched to each individual detector array. An object is imaged onto each detector through a pinhole, and each detector is operated independently with list-mode acquisition. The imaging subject can be rotated about a vertical axis to obtain additional angular projections. The performance of SemiSPECT was characterized using 99mTc. When a 0.5 mm diameter pinhole is used, the spatial resolution on each axis is about 1.4 mm as estimated by the Fourier crosstalk matrix, which provides an algorithm-independent average resolution over the field of view. The energy resolution achieved by summing neighboring pixel signals in a 3 x 3 window is about 10% full-width-at-half-maximum of the photopeak. The overall system sensitivity is about 0.5 x 10(-4) with the energy window of +/-10% from the photopeak. Line-phantom images are presented to visualize the spatial resolution provided by SemiSPECT, and images of bone, myocardium, and human tumor xenografts in mice demonstrate the feasibility of preclinical small-animal studies with SemiSPECT.

  14. Studies on focal alveolar bone healing with technetium (Tc)-99m labeled methylene diphosphonate and gold-collimated cadmium telluride probe

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchimochi, M.; Hosain, F.; Engelke, W.; Zeichner, S.J.; Ruttimann, U.E.; Webber, R.L. (National Institute of Dental Research, Bethesda, MD (USA))

    1991-01-01

    The benefit of using a collimator for a miniaturized cadmium telluride probe was evaluated by monitoring the bone-healing processes for 13 weeks after the induction of small iatrogenic alveolar bone lesions in one side of the mandible in beagles. Technetium (Tc)-99m labeled methylene diphosphonate (200 to 300 MBq, 5.1 to 8.1 mCi, in a solution of 0.5 to 1 ml, intravenously) was used as a bone-seeking radiopharmaceutical. The radioactivity over the bone lesion (L) and the contralateral normal site (C) in the mandible were measured between 1.5 and 2 hours after injection of the tracer, and the activity ratio L/C served as an index of relative bone uptake. A study of six dogs revealed that the healing response to a hemispheric bone defect of 2 mm diameter in the cortical bone could not be detected by an uncollimated probe, and in a repeated study in two dogs the use of a gold collimator (5 mm in diameter, 5 mm in length) did not increase the L/C ratio significantly. A second study in six dogs with 5 mm lesions showed that although systematic trends in the time courses of the L/C ratio obtained both with and without the collimator could be demonstrated, the L/C ratio of collimated versus uncollimated measurements was significantly (p less than 0.005) increased. In three of the latter six dogs, abscesses developed after 9 weeks, leading to a second increase (p less than 0.05) of the L/C ratio with collimation compared with the noninflammation group; without collimation no significant (p greater than 0.15) difference between the two groups could be demonstrated.

  15. Le Tellurure de Cadmium amorphe oxygéné a - CdTe:O Synthèse et étude de quelques propriétés physico-chimiques

    OpenAIRE

    El Azhari, Youssef

    2003-01-01

    The work presented in this thesis is part of the study of the properties of thin layers of semiconductor materials based on cadmium telluride CdTe. The study of the influence of various deposition parameters on the properties of CdTe thin films has enabled us to develop a method of preparing a new material based on CdTe. It is the oxygenated amorphous cadmium telluride aCddTe: O. The thin film deposition of CdTe a-O from a target polycrystalline CdTe requires the use of a plasma high oxidizin...

  16. Radiation resistance of thin-film solar cells for space photovoltaic power

    Science.gov (United States)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  17. Growth of bismuth telluride thin film on Pt by electrochemical atomic layer epitaxy

    Institute of Scientific and Technical Information of China (English)

    ZHU Wen; YANG Jun-you; GAO Xian-hui; HOU Jie; ZHANG Tong-jun; CUI Kun

    2005-01-01

    An automated thin-layer flow cell electrodeposition system was developed for growing Bi2 Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt,this reductive Te underpotential deposition (UPD)/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4: 3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO2+ reduction excludes the possibility of Bi2 Te3 formation. X-ray photoelectron spectroscopy (XPS) analysis also reveals that the incomplete charge transfer in HTeO2+ occurs in Te direct deposition. The effective way of depositing Bi2 Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS). A polycrystalline characteristic was confirmed by XRD. The 2 : 3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about 0.3 - 0.4 μm in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.

  18. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  19. Time-dependent toxicity of cadmium telluride quantum dots on liver and kidneys in mice: histopathological changes with elevated free cadmium ions and hydroxyl radicals

    Directory of Open Access Journals (Sweden)

    Wang M

    2016-05-01

    Full Text Available Mengmeng Wang,1,2,* Jilong Wang,1,2,* Hubo Sun,1,2 Sihai Han,3 Shuai Feng,1 Lu Shi,1 Peijun Meng,1,2 Jiayi Li,1,2 Peili Huang,1,2 Zhiwei Sun1,2 1Department of Toxicology and Sanitary Chemistry, School of Public Health, Capital Medical University, 2Beijing Key Laboratory of Environmental Toxicology, Capital Medical University, Beijing, 3College of Food and Bioengineering, Henan University of Science and Technology, Luoyang, People’s Republic of China *These authors contributed equally to this work Abstract: A complete understanding of the toxicological behavior of quantum dots (QDs in vivo is of great importance and a prerequisite for their application in humans. In contrast with the numerous cytotoxicity studies investigating QDs, only a few in vivo studies of QDs have been reported, and the issue remains controversial. Our study aimed to understand QD-mediated toxicity across different time points and to explore the roles of free cadmium ions (Cd2+ and hydroxyl radicals (·OH in tissue damage. Male ICR mice were administered a single intravenous dose (1.5 µmol/kg of CdTe QDs, and liver and kidney function and morphology were subsequently examined at 1, 7, 14, and 28 days. Furthermore, ·OH production in the tissue was quantified by trapping ·OH with salicylic acid (SA as 2,3-dihydroxybenzoic acid (DHBA and detecting it using a high-performance liquid chromatography fluorescence method. We used the induction of tissue metallothionein levels and 2,3-DHBA:SA ratios as markers for elevated Cd2+ from the degradation of QDs and ·OH generation in the tissue, respectively. Our experimental results revealed that the QD-induced histopathological changes were time-dependent with elevated Cd2+ and ·OH, and could recover after a period of time. The Cd2+ and ·OH exhibited delayed effects in terms of histopathological abnormalities. Histological assessments performed at multiple time points might facilitate the evaluation of the biological safety of

  20. INVESTIGATION OF THIN FILM CADMIUM SULFIDE SOLAR CELLS.

    Science.gov (United States)

    SOLAR CELLS , *CADMIUM COMPOUNDS, FILMS, SULFIDES, VAPOR PLATING, VACUUM APPARATUS, SINGLE CRYSTALS, TITANIUM, COPPER COMPOUNDS, CHLORIDES, INDIUM, MOLYBDENUM, SILICON COMPOUNDS, MONOXIDES, SURFACE PROPERTIES, ENERGY CONVERSION.

  1. Interplay of spin-orbit coupling and superconducting correlations in germanium telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, Vijay; Nguyen, Thuy-Anh; Mansell, Rhodri; Ritchie, David [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE (United Kingdom); Mussler, Gregor [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425, Juelich (Germany)

    2016-03-15

    There is much current interest in combining superconductivity and spin-orbit coupling in order to induce the topological superconductor phase and associated Majorana-like quasiparticles which hold great promise towards fault-tolerant quantum computing. Experimentally these effects have been combined by the proximity-coupling of super-conducting leads and high spin-orbit materials such as InSb and InAs, or by controlled Cu-doping of topological insu-lators such as Bi{sub 2}Se{sub 3}. However, for practical purposes, a single-phase material which intrinsically displays both these effects is highly desirable. Here we demonstrate coexisting superconducting correlations and spin-orbit coupling in molecular-beam-epitaxy-grown thin films of GeTe. The former is evidenced by a precipitous low-temperature drop in the electrical resistivity which is quelled by a magnetic field, and the latter manifests as a weak antilocalisation (WAL) cusp in the magnetotransport. Our studies reveal several other intriguing features such as the presence of two-dimensional rather than bulk transport channels below 2 K, possible signatures of topological superconductivity, and unexpected hysteresis in the magnetotransport. Our work demonstrates GeTe to be a potential host of topological SC and Majorana-like excitations, and to be a versatile platform to develop quantum information device architectures. (copyright 2016 The Authors. Phys. Status Solidi RRL published by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  3. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2013-08-01

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  4. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  5. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    OpenAIRE

    2016-01-01

    Successive Ionic Layer Adsorption and Reaction (SILAR) was used to deposit nanocrystalline cadmium oxide (CdO) thin films on microscopic glass substrates for various cycles (40–120). This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12) with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD), UV–Visible Spectrophotomer (UV–Vi...

  6. Deposition of Cadmium Sulphide Thin Films by Photochemical Deposition and Characterization

    Directory of Open Access Journals (Sweden)

    H.L. Pushpalatha

    2015-03-01

    Full Text Available Deposition of cadmium sulphide (CdS thin films on glass substrates in acidic medium by photochemical deposition (PCD and studies by several characterizations are presented. The structural characterization of the thin films was carried out by XRD. The elemental composition of the thin films was carried out by EDAX. The optical properties have been studied in the wavelength range 200-900 nm and the optical transition has been found to be direct and allowed. The morphological properties are studied by AFM and electrical properties are studied by four probe technique.

  7. Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

    Science.gov (United States)

    Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

    2017-02-01

    The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

  8. Preparation of cadmium-doped ZnO thin films by SILAR and their characterization

    Indian Academy of Sciences (India)

    S Mondal; P Mitra

    2012-10-01

    Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing cadmium incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing cadmium impurification. The average particle size for pure ZnO is 36.73nm and it reduces to 29.9 nm for 10% Cd:ZnO, neglecting strain broadening. The strong preferred c-axis orientation is lost due to cadmium doping and degree of polycrystallinity of the films also increases with increasing Cd incorporation. Incorporation of cadmium was confirmed from elemental analysis using EDX. The optical bandgap of the films decreases with increasing Cd dopant. The value of fundamental absorption edge is 3.18 eV for pure ZnO and it decreases to 3.11 eV for 10% Cd:ZnO.

  9. Cadmium

    Energy Technology Data Exchange (ETDEWEB)

    Stoeppler, M. (Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Angewandte Physikalische Chemie); Piscator, M. (Karolinska Inst., Stockholm (Sweden). Dept. of Environmental Hygiene) (eds.)

    1988-01-01

    The proceedings contain the 18 papers presented at the workshop. They are dealing with the following themes: Toxicity, carcinogenesis and metabolism of cadmium, epidemiology; environmental occurrence; quantitative analysis and quality assessment. (MG) With 57 figs., 79 tabs.

  10. Material and detector properties of cadmium manganese telluride (Cd{sub 1−x}Mn{sub x}Te) crystals grown by the modified floating-zone method

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, A., E-mail: hossain@bnl.gov; Gu, G.D.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Roy, U.N.; Yang, G.; Liu, T.; Zhong, R.; Schneeloch, J.; James, R.B.

    2015-06-01

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd{sub 1−x}Mn{sub x}Te; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd{sub 1−x}Mn{sub x}Te crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  11. Rapid-acquisition myocardial perfusion scintigraphy (MPS) on a novel gamma camera using multipinhole collimation and miniaturized cadmium-zinc-telluride (CZT) detectors: prognostic value and diagnostic accuracy in a 'real-world' nuclear cardiology service.

    Science.gov (United States)

    Chowdhury, F U; Vaidyanathan, S; Bould, M; Marsh, J; Trickett, C; Dodds, K; Clark, T P R; Sapsford, R J; Dickinson, C J; Patel, C N; Thorley, P J

    2014-03-01

    To study the prognostic value of rapid-acquisition adenosine stress-rest myocardial perfusion scintigraphy (MPS) on a gamma camera using multipinhole collimation and cadmium-zinc-telluride (CZT) detectors. The secondary aim was to assess the diagnostic accuracy of the technique compared with invasive coronary angiography. Retrospective analysis of 1109 consecutive patients undergoing MPS in a routine clinical setting on a high-efficiency multipinhole gamma camera. MPS acquisition, performed with a standard injection of 550 MBq of (99m)Tc-tetrofosmin, required a mean (±SD) scanning time of 322 ± 51 s. The hard cardiac event rate at a median (inter-quartile range) follow-up of 624 (552-699) days was 0.4% (95% CI 0.1-1.1) in patients with no significant perfusion abnormality versus 6.8% (95% CI 4.3-10.7%, P MPS of 84% (95% CI 74-91), 79% (95% CI 68-87), 82% (95% CI 72-89), 81% (95% CI 70-89), and 82% (95% CI 73-89), respectively. MPS performed on a CZT solid-state detector camera with multipinhole collimation is an evolutionary development that provides reliable prognostic and diagnostic information, while significantly reducing image acquisition time.

  12. Controlled cadmium telluride thin films for solar cell applications. Second quarterly report, September 1-December 1, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Das, M. B.; Krishnaswamy, S. V.

    1981-01-01

    A thermal annealing procedure to improve the photovoltaic and other electrical characteristics of CdTe sputtered films doped with In is described. For an understanding of the characteristics of these films, SEM, Auger electron spectroscopy and scanning ellipsometry analyses have been carried out. Dark and illuminated I/V characteristics and capacitance and conductance vs. frequency behavior of In doped CdTe Schottky barrier diodes based on Cr and Ni substrates indicate that thermal annealing is an effective means of reducing the trap concentrations on these films that can lead to a significant improvement of the quality of sputtered films for solar cell applications.

  13. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual subcontract report, January 20, 1995--January 19, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A D; Bohn, R G; Contreras-Puente, G [Toledo Univ., OH (United States). Dept. of Physics and Astronomy

    1996-05-01

    This annual report covers the second year of a 3-year NREL subcontract with the University of Toledo that is focused on improvements in efficiency for radio frequency (rf)-sputtered CdS/CdTe solar cells. In earlier work supported by NREL, the University of Toledo established the viability of two new deposition methods for CdS/CdTe solar cells by fabricating cells with efficiencies greater than 10% at air mass (AM) 1.5 on soda lime glass for all-sputtered cells and also for all-laser-deposited cells. Most of the effort has been placed on radio frequency sputtering (RFS) because it was judged to be more economical and more easily scaled to large-area deposition. However, laser physical vapor deposition (LPVD) has remained the method of choice for the deposition of CdCl{sub 2} layers and also for the exploration of new materials such as the ternary alloys including CdS{sub x} Te{sub 1{minus}x} and dopants such as Cu in ZnTe.

  14. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    Directory of Open Access Journals (Sweden)

    A.C. Nwanya

    2016-06-01

    Full Text Available Successive Ionic Layer Adsorption and Reaction (SILAR was used to deposit nanocrystalline cadmium oxide (CdO thin films on microscopic glass substrates for various cycles (40–120. This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12 with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD, UV–Visible Spectrophotomer (UV–Vis and Scanning Electron Microscopy (SEM. The 80th cycle was observed to be the saturation stage for this reaction. The XRD results confirmed the films to be CdO with some Cd(OH2 phase at higher deposition cycles. The films were polycrystalline in nature having high orientation along (111 and (200 planes. As the number of cycles increases the calculated average crystallite sizes increase gradually up till the 80th cycle after which a gradual decrease in the crystallite size was observed with increasing number of cycles. The films’ transmittance in the visible and near infrared region decreased as the number of cycles increased and ranged between 25 and 80%. This work shows the feasibility of using simple SILAR method at room temperature to obtain Cd(OH2 films which are transformed to CdO thin films after annealing.

  15. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  16. Spray deposition of highly transparent fluorine doped cadmium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deokate, R.J.; Pawar, S.M.; Moholkar, A.V.; Sawant, V.S.; Pawar, C.A.; Bhosale, C.H. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India); Rajpure, K.Y. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India)], E-mail: kyr_phy@unishivaji.ac.in

    2008-01-30

    The cadmium oxide (CdO) and F:CdO films have been deposited by spray pyrolysis method using cadmium acetate and ammonium fluoride as precursors for Cd and F ions, respectively. The effect of temperature and F doping on the structural, morphological, optical and Hall effect properties of sprayed CdO thin films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption and electrical measurement techniques. TGA and DTA studies, indicates the formation of CdO by decomposition of cadmium acetate after 250 deg. C. XRD patterns reveal that samples are polycrystalline with cubic structure and exhibits (2 0 0) preferential orientation. Considerable broading of (2 0 0) peak, simultaneous shifting of corresponding Bragg's angle have been observed with respect to F doping level. SEM and AFM show the heterogeneous distribution of cubical grains all over the substrate, which are randomly distributed. F doping shifts the optical gap along with the increase in the transparency of CdO films. The Hall effect measurement indicates that the resistivity and mobility decrease up to 4% F doping.

  17. Polymer Substrates For Lightweight, Thin-Film Solar Cells

    Science.gov (United States)

    Lewis, Carol R.

    1993-01-01

    Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.

  18. Bis(3-methyl-2-pyridyl)ditelluride and pyridyl tellurolate complexes of zinc, cadmium, mercury: Synthesis, characterization and their conversion to metal telluride nanoparticles.

    Science.gov (United States)

    Kedarnath, G; Jain, Vimal K; Wadawale, Amey; Dey, Gautam K

    2009-10-21

    Treatment of an acetonitrile solution of metal chloride with bis(3-methyl-2-pyridyl)ditelluride, [Te(2)(pyMe)(2)], in the same solvent yielded complexes of composition [MCl(2){Te(2)(pyMe)(2)}] (M = Zn or Cd) whereas reactions of [MCl(2)(tmeda)] with NaTepyR (R = H or Me) gave tellurolate complexes of the general formula [M(TepyR)(2)] (M = Cd or Hg). When the cadmium complex [Cd(Tepy)(2)] was crystallized in the presence of excess tmeda, [Cd(Tepy)(2)(tmeda)] was formed exclusively. These complexes were characterized by elemental analyses, uv-vis, (1)H NMR data. The crystal structures of [ZnCl(2){Te(2)(pyMe)(2)}] and [Cd(Tepy)(2)(tmeda)] were established by single crystal X-ray diffraction. In the former zinc is coordinated to nitrogen atoms of the pyridyl group, while in the latter the coordination environment around tetrahedral cadmium is defined by the two neutral nitrogen atoms of tmeda, and two pyridyl tellurolate ligands. Thermal behavior of some of these complexes was studied by thermogravimetric analysis. Pyrolysis of [M(Tepy)(2)] in a furnace or in coordinating solvents such as hexadecylamine/tri-n-octylphosphine oxide (HDA/TOPO) at 350 and 160 degrees C, respectively gave MTe nanoparticles, which were characterized by uv-vis, photoluminiscence, XRD, EDAX and TEM.

  19. Demonstration of enhanced iodine K-edge imaging using an energy-dispersive X-ray computed tomography system with a 25 mm/s-scan linear cadmium telluride detector and a single comparator

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Eiichi, E-mail: dresato@iwate-med.ac.jp [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Oda, Yasuyuki [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Abudurexiti, Abulajiang [Faculty of Software and Information Science, Iwate Prefectural University, 152-52 Sugo, Takizawa, Iwate 020-0193 (Japan); Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya [3rd Department of Surgery, Toho University School of Medicine, 2-17-6 Ohashi, Meguro-ku, Tokyo 153-8515 (Japan); Sato, Shigehiro [Department of Microbiology, School of Medicine, Iwate Medical University, 19-1 Uchimaru, Morioka, Iwate 020-0023 (Japan); Ogawa, Akira [Department of Neurosurgery, School of Medicine, Iwate Medical University, 19-1 Uchimaru, Morioka, Iwate 020-0023 (Japan); Onagawa, Jun [Department of Electronics, Faculty of Engineering, Tohoku Gakuin University, 1-13-1 Chuo, Tagajo, Miyagi 985-8537 (Japan)

    2012-05-15

    An energy-dispersive (ED) X-ray computed tomography (CT) system is useful for carrying out monochromatic imaging. To perform enhanced iodine K-edge CT, we developed an oscillation linear cadmium telluride (CdTe) detector with a scan velocity of 25 mm/s and an energy resolution of 1.2 keV. CT is performed by repeated linear scans and rotations of an object. Penetrating X-ray photons from the object are detected by the CdTe detector, and event signals of X-ray photons are produced using charge-sensitive and shaping amplifiers. The lower photon energy is determined by a comparator device, and the maximum photon energy of 60 keV corresponds to the tube voltage. Rectangular-shaped comparator outputs are counted by a counter card. In the ED-CT, tube voltage and current were 60 kV and 0.30 mA, respectively, and X-ray intensity was 14.8 {mu}Gy/s at 1.0 m from the source at a tube voltage of 60 kV. Demonstration of enhanced iodine K-edge X-ray CT for cancer diagnosis was carried out by selecting photons with energies ranging from 34 to 60 keV. - Highlights: Black-Right-Pointing-Pointer We developed an energy-dispersive X-ray CT system with a 25 mm/s-scan CdTe detector. Black-Right-Pointing-Pointer CT is performed by repeated linear scans and rotations of an object. Black-Right-Pointing-Pointer Lower photon energy is determined by a comparator device. Black-Right-Pointing-Pointer Spatial resolutions were 0.5 Multiplication-Sign 0.5 mm{sup 2}. Black-Right-Pointing-Pointer Iodine K-edge CT was carried out by selecting photons from 34 to 60 keV.

  20. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    Science.gov (United States)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2016-12-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  1. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling.

    Science.gov (United States)

    Simon, F-G; Holm, O; Berger, W

    2013-04-01

    Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.

  2. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    Science.gov (United States)

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  3. Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    M. Moreno

    2016-01-01

    Full Text Available Cadmium sulfide (CdS thin films were deposited by chemical bath deposition (CBD onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs. MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF. An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate. These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

  4. Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation.

    Science.gov (United States)

    Menke, E J; Brown, M A; Li, Q; Hemminger, J C; Penner, R M

    2006-12-01

    Nanowires composed of the thermoelectric material Bi2Te3 were synthesized on highly oriented pyrolytic graphite (HOPG) electrodes using the electrochemical step edge decoration (ESED) method. Nanowire synthesis was initiated by applying a voltage pulse of -0.75 V versus SCE for 5 ms to an HOPG electrode in an aqueous solution containing both Bi3+ and TeO22-, thereby producing nuclei at the step edges. Bi2Te3 was electrodeposited onto these nuclei using a cyclic electrodeposition-stripping scheme that involved the electrodeposition of bismuth-rich Bi2Te3 on a negative-going voltammetric scan (to -0.05 V) and the subsequent anodic stripping of excess bismuth from these nanowires during a positive-going scan (to +0.35 V). When this cycle was repeated 10-50 times, Bi2Te3 nanowires in the 100-300-nm-diameter range were obtained. These nanowires were narrowly dispersed in diameter (RSDdia = 10-20%), were more than 100 microm in length, and were organized into parallel arrays containing hundreds of wires. Smaller nanowires, with diameters down to 30 nm, were obtained by electrooxidizing 150-nm-diameter Bi2Te3 nanowires at +0.37 V under conditions of kinetic control. This oxidation process unexpectedly improved the uniformity of Bi2Te3 nanowires, and X-ray photoelectron spectroscopy (XPS) shows that these nanowires retain a Bi2Te3 core but also have a thin surface layer composed of Bi and Te oxides. The ability of Bi2Te3 nanowires to generate electrical power was assessed by transferring ensembles of these nanowires onto cyanoacrylate-coated glass surfaces and evaporating 4-point nickel contacts. A dimensionless figure of merit, ZT, ranging from 0 to 0.85 was measured for fresh samples that were less than 1 day old. XPS reveals that Bi2Te3 nanowires are oxidized within a week to Bi2O3 and TeO2. These oxides may interfere with the application by evaporation of electrical contacts to these nanowires.

  5. Effects of Long-term exposure of Gelatinated and Non-gelatinated Cadmium Telluride Quantum Dots on Differentiated PC12 cells

    LENUS (Irish Health Repository)

    Prasad, Babu R

    2012-01-20

    Abstract Background The inherent toxicity of unmodified Quantum Dots (QDs) is a major hindrance to their use in biological applications. To make them more potent as neuroprosthetic and neurotherapeutic agents, thioglycolic acid (TGA) capped CdTe QDs, were coated with a gelatine layer and investigated in this study with differentiated pheochromocytoma 12 (PC12) cells. The QD - cell interactions were investigated after incubation periods of up to 17 days by MTT and APOTOX-Glo Triplex assays along with using confocal microscopy. Results Long term exposure (up to 17 days) to gelatinated TGA-capped CdTe QDs of PC12 cells in the course of differentiation and after neurites were grown resulted in dramatically reduced cytotoxicity compared to non-gelatinated TGA-capped CdTe QDs. Conclusion The toxicity mechanism of QDs was identified as caspase-mediated apoptosis as a result of cadmium leaking from the core of QDs. It was therefore concluded that the gelatine capping on the surface of QDs acts as a barrier towards the leaking of toxic ions from the core QDs in the long term (up to 17 days).

  6. Effects of long-term exposure of gelatinated and non-gelatinated cadmium telluride quantum dots on differentiated PC12 cells

    Directory of Open Access Journals (Sweden)

    Prasad Babu R

    2012-01-01

    Full Text Available Abstract Background The inherent toxicity of unmodified Quantum Dots (QDs is a major hindrance to their use in biological applications. To make them more potent as neuroprosthetic and neurotherapeutic agents, thioglycolic acid (TGA capped CdTe QDs, were coated with a gelatine layer and investigated in this study with differentiated pheochromocytoma 12 (PC12 cells. The QD - cell interactions were investigated after incubation periods of up to 17 days by MTT and APOTOX-Glo Triplex assays along with using confocal microscopy. Results Long term exposure (up to 17 days to gelatinated TGA-capped CdTe QDs of PC12 cells in the course of differentiation and after neurites were grown resulted in dramatically reduced cytotoxicity compared to non-gelatinated TGA-capped CdTe QDs. Conclusion The toxicity mechanism of QDs was identified as caspase-mediated apoptosis as a result of cadmium leaking from the core of QDs. It was therefore concluded that the gelatine capping on the surface of QDs acts as a barrier towards the leaking of toxic ions from the core QDs in the long term (up to 17 days.

  7. Cadmium telluride quantum dots (CdTe-QDs) and enhanced ultraviolet-B (UV-B) radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    Science.gov (United States)

    Chen, Huize; Gong, Yan; Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m(2)/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions.

  8. Cadmium telluride quantum dots (CdTe-QDs and enhanced ultraviolet-B (UV-B radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    Directory of Open Access Journals (Sweden)

    Huize Chen

    Full Text Available Nanoparticles (NPs are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs, a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L or UV-B radiation (10 KJ/m(2/d induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions.

  9. Thin film solar cells. (Latest citations from the NTIS bibliographic database). Published Search

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-11-01

    The bibliography contains citations concerning research and development of high-efficiency and low-cost thin film solar cells. References discuss the design and fabrication of silicon, gallium arsenide, copper selenide, indium selenide, cadmium telluride, and copper indium selenide solar cells. Applications in space and utilities are examined. Government projects and foreign technology are also reviewed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  10. Diffusive gradient in thin films technique for assessment of cadmium and copper bioaccessibility to radish (Raphanus sativus).

    Science.gov (United States)

    Dočekalová, Hana; Škarpa, Petr; Dočekal, Bohumil

    2015-03-01

    The aim of this study was to assess cadmium and copper uptake by radish (Raphanus sativus) and to test the capability of the diffusive gradient in thin films (DGT) technique to predict bioaccessibility of the metals for this plant. Radish plants were grown in pots filled with uncontaminated control and artificially contaminated soils differing in cadmium and copper contents. Metal concentrations in plants were compared with free ion metal concentrations in soil solution, and concentrations measured by DGT. Significant correlation was found between metal fluxes to plant and metal fluxes into DGT. Pearson correlation coefficient for cadmium was 0.994 and for copper 0.998. The obtained results showed that DGT offers the possibility of simple test procedure for soils and can be used as a physical surrogate for plant uptake.

  11. Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

    Science.gov (United States)

    Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

    2017-11-01

    Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  12. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  13. Effect of increasing tellurium content on the electronic and optical properties of cadmium selenide telluride alloys CdSe{sub 1-x}Te{sub x}: An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, Ali Hussain, E-mail: maalidph@yahoo.co.uk [Institute of Physical Biology-South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Kityk, I.V. [Electrical Engineering Department, Technical University of Czestochowa, Al. Armii Krajowej 17/19, Czestochowa (Poland); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique de la Matiere (LPQ3 M), universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Auluck, S. [National Physical Laboratory Dr. K S Krishnan Marg, New Delhi 110012 (India)

    2011-06-16

    Highlights: > Theoretical study of effect of vary Te content on band structure, density of states, linear and nonlinear optical susceptibilities of CdSe{sub 1-x}Te{sub x}. > Increasing Te content leads to a decrease in the energy band gap. > Significant enhancement of the electronic properties as a function of tellurium concentration - Abstract: An all electron full potential linearized augmented plane wave method, within a framework of GGA (EV-GGA) approach, has been used for an ab initio theoretical study of the effect of increasing tellurium content on the band structure, density of states, and the spectral features of the linear and nonlinear optical susceptibilities of the cadmium-selenide-telluride ternary alloys CdSe{sub 1-x}Te{sub x} (x = 0.0, 0.25, 0.5, 0.75 and 1.0). Our calculations show that increasing Te content leads to a decrease in the energy band gap. We find that the band gaps are 0.95 (1.76), 0.89 (1.65), 0.83 (1.56), 0.79 (1.44) and 0.76 (1.31) eV for x = 0.0, 0.25, 0.5, 0.75 and 1.0 in the cubic structure. As these alloys are known to have a wurtzite structure for x less than 0.25, the energy gaps are 0.8 (1.6) eV and 0.7 (1.55) eV for the wurtzite structure (x = 0.0, 0.25) for the GGA (EV-GGA) exchange correlation potentials. This reduction in the energy gaps enhances the functionality of the CdSe{sub 1-x}Te{sub x} alloys, at least for these concentrations, leading to an increase in the effective second-order susceptibility coefficients from 16.75 pm/V (CdSe) to 18.85 pm/V (CdSe{sub 0.75}Te{sub 0.25}), 27.23 pm/V (CdSe{sub 0.5}Te{sub 0.5}), 32.25 pm/V (CdSe{sub 0.25}Te{sub 0.75}), and 37.70 pm/V (CdTe) for the cubic structure and from 12.65 pm/V (CdSe) to 21.11 pm/V (CdSe{sub 0.75}Te{sub 0.25}) in the wurtzite structure. We find a nonlinear relationship between the absorption/emission energies and composition, and a significant enhancement of the electronic properties as a function of tellurium concentration. This variation will help in

  14. Progress and issues in polycrystalline thin-film PV technologies

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.; Ullal, H.S.; Roedern, B. von [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  15. Ellipsometric Analysis of Cadmium Telluride Films’ Structure

    OpenAIRE

    Anna Evmenova; Volodymyr Odarych; Mykola Vuichyk; Fedir Sizov

    2015-01-01

    Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fact authenticates the necessity to attract a more complicated model that should include heterogeneity of films. Ellipsometric data calculation within a two-layer film model permitted to conclude tha...

  16. Growth and Application of Cadmium Telluride.

    Science.gov (United States)

    1980-01-01

    photoconductive bodies or infra-red telescopes , image intensifiers, camera tubes, photoelectric cells, X-ray dosimeters and the like." So even by 1959 there...This consists of a stationary heater with a motorised pulley system which provides for movement of the CdTe charge relative to the heater. The furnace

  17. Surface study of mercury-cadmium-telluride

    Energy Technology Data Exchange (ETDEWEB)

    Lops, V.C.

    1985-01-01

    Single crystals of Hg/sub 1-x/Cd/sub x/Te were studied to determine how changes in the surface conditions affected electrical properties. Infrared detector grade material from Honeywell Radiation Center (x = 0.2, bandgap near 10 ..mu..m) was used to examine the effects of changes in the surface charge density on electrical I/f noise. The surface charge density, which was controlled by the pH of the aqueous solution was measured in a zeta meter that operated much like a Millikan oil-drop experiment. The electrophoresis zeta potential measurements on (HgCd)Te identified the active surface oxide as TeO/sub 2/ and also revealed information on the surface chemistry. An experimental fit yielded the dissociation constant of tellurous acid, which was the result of TeO/sub 2/ combining with H/sub 2/O. The dissociation of tellurous acid was responsible for the measured surface charge densities and the surface chemistry from pH = 1 to pH = 8. At pH = 1, the surface was H/sub 3/TeO/sub 2//sup +/. At pH = 1.5, the surface was H/sub 2/TeO/sub 3/ which gave the neutral point, PZZP (Point of Zero Zeta Potential). With the pH between 2 and 6, the surface was HTeO/sub 3//sup -/. As the pH was changed to 7 and greater, the surface was TeO/sub 3//sup -/. Electrical I/f noise in (HgCd)Te was found to be dominated by bulk and not surface effects at room temperature.

  18. Diffusion of gallium in cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Blackmore, G.W. (Royal Signals and Radar Establishment, Malvern (United Kingdom)); Jones, E.D. (Coventry Polytechnic (United Kingdom)); Mullin, J.B. (Electronics Materials Consultant, West Malvern (United Kingdom)); Stewart, N.M. (BT Labs., Martlesham Heath, Ipswich (United Kingdom))

    1993-01-30

    The diffusion of Ga into bulk-grown, single crystal slices of CdTe was studied in the temperature range 350-811degC where the diffusion anneals were carried out in sealed silica capsules using three different types of diffusion sources. These were: excess Ga used alone, or with either excess Cd or excess Te added to the Ga. Each of the three sets of conditions resulted in different types of concentration profile. At temperatures above 470degC, a function composed of the sum of two complementary error functions gave the best fit to the profiles, whereas below this temperature a function composed of the sum of one or more exponentials of the form exp(-ax) gave the best fit. The behaviour of the diffusion of Ga in CdTe is complex, but it can be seen that two diffusion mechanisms are operating. The first is where D appears to decrease with Cd partial pressure, which implies that the diffusion mechanism may involve Cd vacancies, and a second which is independent of Cd partial pressure. The moderate values of D obtained, confirms that CdTe buffer layers may be useful in reducing Ga contamination in (Hg[sub x]Cd[sub 1-x])Te epitaxial devices grown on GaAs substrates. (orig.).

  19. Femtosecond Transient Absorption Studies in Cadmium Selenide Nanocrystal Thin Films Prepared by Chemical Bath Deposition Method

    Directory of Open Access Journals (Sweden)

    M. C. Rath

    2007-01-01

    Full Text Available Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated by exciting at 400 nm laser light and monitored by several other wavelengths. The induced absorption followed by a fast bleach recovery observed near and above the bandgap indicates that the photo-excited carriers (electrons are first trapped by the available traps and then the trapped electrons absorb the probe light to show a delayed absorption process. The transient decay kinetics was found to be multiexponential in nature. The short time constant, <1 picosecond, was attributed to the trapping of electrons by the surface and/or deep traps and the long time constant, ≥20 picoseconds, was due to the recombination of the trapped carriers. A very little difference in the relaxation processes was observed in the samples prepared at bath temperatures from 25∘C to 60∘C.

  20. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    Science.gov (United States)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  1. Ultrafast Study of Carrier Interaction in Bismuth Telluride Thin Film%碲化铋薄膜载能粒子相互作用的超快研究

    Institute of Scientific and Technical Information of China (English)

    马维刚; 张兴

    2012-01-01

    Bismuth telluride, with narrow band gap, large electrical conductivity, large Seebeck coefficient, and low thermal conductivity, is one of the best thermoelectric materials with the highest figure of merit at room temperature. In addition, thin film and superlattice are considered to be the feasible ways to improve the performance of thermoelectric materials. And hence, it is important to study the carrier interaction in bismuth telluride thin film. In this paper, the carrier interaction of 100 nm thick bismuth telluride film deposited on silicon substrate has been studied by applying the femtosecond laser pump-probe transient thermoreflectance technique. Different carrier interaction processes, including electrons excited from valence band to conduction band, electron-hole recombination, and energy coupling from photoexcited carriers to lattice have been studied respectively by changing the delay time step of the probe pulse. Also, an acoustic wave generated from the thermal stress has been observed and the corresponding extracted longitudinal wave velocity is 2649 m s-1.%碲化铋禁带宽度非常窄而具有高电导率和塞贝克系数,同时具有低热导率,成为已知室温下优值系数最高的热电材料。已有研究表明,纳米薄膜和超晶格是进一步提高材料热电性能的可行途径。因此超快研究碲化铋纳米薄膜中载能子间的相互作用过程对开发高性能热电材料有重要意义。本文采用飞秒激光泵浦一探测技术,实验研究了沉积在硅基底上厚度为100nm碲化铋薄膜中各载能粒子的相互作用过程。通过改变延迟时间步长,分别观察到价带电子被光子激发跃迁至导带,激发电子在导带内与声子的能量弛豫及导带电子与空穴复合跃迁至价带,并将能量传递给声子导致声子温度升高的过程。此外,还观察到热应力产生的声波,并据此得到了碲化铋薄膜中纵波声速为2649ms-1。

  2. Low-temperature perovskite-type cadmium titanate thin films derived from a simple particulate sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, M.R. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Department of Materials Science and Engineering, Sharif University of Technology, Azadi Street, Tehran (Iran, Islamic Republic of)], E-mail: mrm41@cam.ac.uk; Fray, D.J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2009-02-15

    Low-temperature perovskite-type cadmium titanate (CdTiO{sub 3}) with a nanocrystalline and mesoporous structure was prepared at various Ti:Cd molar ratios by a straightforward particulate sol-gel route. The prepared sols had a narrow particle size distribution, in the range 23-26 nm. X-ray diffraction and Fourier transform infrared spectroscopy revealed that the powders contained a mixture of ilmenite-CdTiO{sub 3}, perovskite-CdTiO{sub 3}, anatase and rutile phases, depending on the annealing temperature and the Ti:Cd molar ratio. Perovskite-CdTiO{sub 3} was the major type obtained from cadmium-prominent powders at low temperature, whereas ilmenite-CdTiO{sub 3} was the major type obtained from titanium-prominent powders at high temperature. It was observed that the anatase-to-rutile phase transformation accelerated with decreasing Ti:Cd molar ratio. Furthermore, the ilmenite-to-perovskite phase transformation accelerated with a decrease in both the Ti:Cd molar ratio and the annealing temperature. The crystallite sizes of the ilmenite- and perovskite-CdTiO{sub 3} phases reduced with increasing the Ti:Cd molar ratio. Field emission scanning electron microscopic analysis revealed that the average grain size of the thin films decreased with an increase in the Ti:Cd molar ratio. Moreover, atomic force microscope images showed that CdTiO{sub 3} thin films had a columnar-like morphology. Based on Brunauer-Emmett-Taylor analysis, cadmium titanate powder containing Ti:Cd = 75:25 showed the greatest surface area and roughness and the smallest pore size among all the powders annealed at 500 deg. C. This is one of the smallest crystallite sizes and largest surface areas reported in the literature, and can be used in many applications in areas from optical electronics to gas sensors.

  3. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  4. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A. [Departamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco C.P. 44430 (Mexico); Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, D.F., C.P. 11801 (Mexico); Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O. [Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, D. F. C.P. 07360 (Mexico); Hernández-Hernández, A. [Escuela Superior de Apan, Universidad Autónoma del Estado de Hidalgo, Calle Ejido de Chimalpa Tlalayote s/n Colonia Chimalpa, Apan Hidalgo (Mexico); Moure-Flores, F. de [Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro C.P. 76010 (Mexico)

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  5. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  6. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Final technical report, April 9, 1979-April 8, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-06-01

    After a brief review of the work done during the first three quarters, the work done during the last quarter is discussed in detail. In brief, CdTe sputtered self-doped and indium-doped n-type layers on Ni-film on glass have been investigated for film resistivity, contact resistance, Hall mobility and Schottky barrier diode characteristics. Ni has been found to provide satisfactory ohmic contacts and self-doped samples have indicated Hall mobility of approximately 8cm/sup 2//Vsec when the effective doping concentration is approximately 10/sup 18/cm/sup -3/. Use of indium doped sputtered films, when properly surface treated prior to metallization, appear to yield the best kind of Schottky barrier diode with approximate barrier height of 0.77 volt and Richardson constant A* approx. = 60 A/cm/sup 20/K/sup 2/. In spite of these attractive parameter values, these devices showed low V/sub oc/ and the capacitance showed unexpected frequency dependence that require further investigation. Finally suggestions for future work is presented.

  7. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 3, October 9, 1979-January 8, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-02-01

    The main emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined by SEM showing nodular growths under certain conditions. I-V, C-V and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200mV V/sub oc/ and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metallized with Au.

  8. Polycrystalline Thin-Film Cadmium Telluride Solar Cells Fabricated by Electrodeposition; Final Technical Report, 20 March 1995-15 June 1998

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J. U.; Mao, D.; Kaydanov, V.; Ohno, T. R.; Williamson, D. L.; Collins, R.; Furtak, T. E.

    1999-01-27

    This report summarizes work performed by the Colorado School of Mines Department of Physics under this subcontract. Based on the studies conducted, researchers increased the efficiency of the cells with electrodeposited CdTe and CBD CdS by 3% on average ({approx}30 relative %). The improvement came from 1. Optimization of CdS initial thickness taking into account CdS consumption of CdTe during the CdTe/CdS post-deposition treatment; optimization of CdS post-deposition treatment with CdCl2 aimed at prevention of Te diffusion into CdS and improvement of the CdS film morphology and electronic properties. That led to a considerable increase in short circuit current, by 13% on average. 2. Optimization of CdTe thickness and post-deposition treatment which led to a significant increase in Voc, by {approx}70 mV. The highest Voc obtained exceeded 800 mV. 3. Development of a ZnTe:Cu/Metal back contact processing procedure that included selection of optimal Cu content, deposition regime and post-deposition treatment conditions. As a result, back contact resistance as low as 0.1W-cm2 was obtained. The cell stability was measured on exposure to accelerated stress conditions. Preliminary studies of some new approaches to improvement of CdS/CdTe structure were conducted.

  9. High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  10. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Zandian, Majid

    Doped layer semiconductor structures provide possibilities for novel electronic devices. Growth of Hg1-xCdxTe by molecular beam epitaxy (MBE) allows precise control over the doping profile and position of heterojunctions as well as structural properties of this ternary alloy. Even though n-type doping using indium is well established, little is known about p-type doping in this material system by MBE. Several elements such as Ag, Au, Sb, Bi and P have been previously used, however high diffusion coefficient and amphoteric behavior of these atoms in HgCdTe has restricted their use in heterojunction devices where control over doping profiles and concentrations is needed. We investigated arsenic incorporation efficiency as a function of As 4 flux and growth temperature. The sticking coefficient of As is substantially higher at lower growth temperature compared to growth at 190°C. For samples grown at 170°C, the etch pit density (EPD) is higher compared to p-type As doped samples grown at 190°C. Higher EPD is associated with columnar twin defects observed in transmission electron microscopy (TEM) studies of low growth temperature samples. Growth at low temperature of 170°C causes Hg rich condition promoting twin formation. Therefore, growth of p-type layers doped with As at low temperatures require optimization of II/VI flux ratio to eliminate columnar twin defects. It is possible to incorporate As at normal MBE growth temperature of 190°C but very high flux of As has to used to overcome low sticking coefficient of As at these temperatures. We proposed a mechanism for the activation of As involving Hg vacancies (VHg··) where Te is moved to a Hg vacancy, leaving behind a Te vacancy, which is then filled by an As atom. The Te that is now on a Hg site (i.e., Te antisite) migrates to the surface and leaves the crystal.

  11. Ultrafast charge carrier relaxation and charge transfer processes in CdS/CdTe thin films.

    Science.gov (United States)

    Pandit, Bill; Dharmadasa, Ruvini; Dharmadasa, I M; Druffel, Thad; Liu, Jinjun

    2015-07-14

    Ultrafast transient absorption pump-probe spectroscopy (TAPPS) has been employed to investigate charge carrier relaxation in cadmium sulfide/cadmium telluride (CdS/CdTe) nanoparticle (NP)-based thin films and electron transfer (ET) processes between CdTe and CdS. Effects of post-growth annealing treatments to ET processes have been investigated by carrying out TAPPS experiments on three CdS/CdTe samples: as deposited, heat treated, and CdCl2 treated. Clear evidence of ET process in the treated thin films has been observed by comparing transient absorption (TA) spectra of CdS/CdTe thin films to those of CdS and CdTe. Quantitative comparison between ultrafast kinetics at different probe wavelengths unravels the ET processes and enables determination of its rate constants. Implication of the photoinduced dynamics to photovoltaic devices is discussed.

  12. Hafnium germanium telluride

    Science.gov (United States)

    Jang, Gyung-Joo; Yun, Hoseop

    2008-01-01

    The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetra­hedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. PMID:21202163

  13. Hafnium germanium telluride

    Directory of Open Access Journals (Sweden)

    Hoseop Yun

    2008-05-01

    Full Text Available The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps.

  14. Lead telluride alloy thermoelectrics

    Directory of Open Access Journals (Sweden)

    Aaron D. LaLonde

    2011-11-01

    Full Text Available The opportunity to use solid-state thermoelectrics for waste heat recovery has reinvigorated the field of thermoelectrics in tackling the challenges of energy sustainability. While thermoelectric generators have decades of proven reliability in space, from the 1960s to the present, terrestrial uses have so far been limited to niche applications on Earth because of a relatively low material efficiency. Lead telluride alloys were some of the first materials investigated and commercialized for generators but their full potential for thermoelectrics has only recently been revealed to be far greater than commonly believed. By reviewing some of the past and present successes of PbTe as a thermoelectric material we identify the issues for achieving maximum performance and successful band structure engineering strategies for further improvements that can be applied to other thermoelectric materials systems.

  15. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    OpenAIRE

    Claudio Davet Gutiérrez-Lazos; Mauricio Ortega-López; Manuel A. Pérez-Guzmán; A. Mauricio Espinoza-Rivas; Francisco Solís-Pomar; Rebeca Ortega-Amaya; L. Gerardo Silva-Vidaurri; Castro-Peña, Virginia C; Eduardo Pérez-Tijerina

    2014-01-01

    This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis i...

  16. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    OpenAIRE

    M. Rigana Begam; N. Madhusudhana Rao; S. Kaleemulla; M. Shobana; N. Sai Krishna; M. Kuppan

    2013-01-01

    Nanocrystalline Cadmium Telluride (CdTe) thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111) preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decre...

  17. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    M. Rigana Begam

    2013-07-01

    Full Text Available Nanocrystalline Cadmium Telluride (CdTe thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111 preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decreased from 2.87 eV to 2.05 eV with the increase of the crystallite size.

  18. Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

    2016-07-29

    Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

  19. Structural and Optical Studies of 100 MeV Ni+7 Irradiated Cadmium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    Rajesh Singh

    2015-10-01

    Full Text Available The effect of irradiation with Swift (100 MeV Ni+ 7 ions on the structural and optical properties of Cadmium Selenide (CdSe thin films have been investigated at different fluencies in the range of 1  1011-1  1013 ions/cm – 2. The CdSe films on glass substrates were prepared by thermal evaporation. The structural and optical changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD, UV-VIS and Raman spectroscopy. After irradiating the films with Ni+ 7 ions XRD show the increased in peak intensity and crystallite size with increasing fluence. The UV-VIS-IR spectroscopy revealed that there is decrease in band gap energy of the films after irradiation with increasing fluencies. Raman spectrum for as deposited and irradiated films show two peak, one at 209 cm – 1 and at 410 cm – 1 which is assigned to the longitudinal optical (LO phonon mode.

  20. Influences of indium doping and annealing on microstructure and optical properties of cadmium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yuankun [University of Shanghai for Science and Technology, School of Materials Science and Engineering, Shanghai (China); Lei, Pei; Zhu, Jiaqi; Han, Jiecai [Harbin Institute of Technology, Center for Composite Materials, Harbin (China)

    2016-04-15

    The influences of indium doping and subsequent annealing in nitrogen and air atmospheres on the microstructure and optical properties of cadmium oxide films were studied in detail with the aid of various characterizations. X-ray photoelectronic spectroscopy analysis shows that indium atom forms chemically oxidized bonds in Cd-O matrix. X-ray diffraction results demonstrate that CdO structure remains FCC structure with indium doping, whereas the preferential orientation transforms from (222) into (200) orientation. Indium doping prevents the large crystalline growth, and this role still works under both nitrogen and air annealing processes. Similarly, CdO films show rough surface under annealing conditions, but the force has been greatly weakened at high doping level. It is clear that refractive index and extinction coefficient are closely correlated with crystalline size for undoped films, whereas it turns to the doping level for doped films, which can be performed by the mechanism of indium atom substitution. This work provides a very useful guild for design and application of optical-electronic devices. (orig.)

  1. Influences of indium doping and annealing on microstructure and optical properties of cadmium oxide thin films

    Science.gov (United States)

    Zhu, Yuankun; Lei, Pei; Zhu, Jiaqi; Han, Jiecai

    2016-04-01

    The influences of indium doping and subsequent annealing in nitrogen and air atmospheres on the microstructure and optical properties of cadmium oxide films were studied in detail with the aid of various characterizations. X-ray photoelectronic spectroscopy analysis shows that indium atom forms chemically oxidized bonds in Cd-O matrix. X-ray diffraction results demonstrate that CdO structure remains FCC structure with indium doping, whereas the preferential orientation transforms from (222) into (200) orientation. Indium doping prevents the large crystalline growth, and this role still works under both nitrogen and air annealing processes. Similarly, CdO films show rough surface under annealing conditions, but the force has been greatly weakened at high doping level. It is clear that refractive index and extinction coefficient are closely correlated with crystalline size for undoped films, whereas it turns to the doping level for doped films, which can be performed by the mechanism of indium atom substitution. This work provides a very useful guild for design and application of optical-electronic devices.

  2. Thickness dependence of structural and optical properties of cadmium iodide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Centre of Nanotechnology, King AbdulAziz University, Jeddah (Saudi Arabia); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Ismail, Yasser A.M.; Aboraia, A.M. [Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542 (Egypt); Shaaban, E.R., E-mail: esamramadan2008@yahoo.com [Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542 (Egypt)

    2015-07-05

    Highlights: • Different thicknesses of CdI{sub 2} films were prepared. • Both crystallite size and microstrain of the films has been determined. • The room temperature reflectance and transmittance data are analyzed. • The refractive index and energy gap are determined. - Abstract: Structural and optical properties as a function of film thickness have been studied for the thermally evaporated cadmium iodide (CdI{sub 2}) films. According to XRD structure, the thickness of investigated films extends from 272 to 696 nm, showing hexagonal structure and good c-axis alignment normal to glass substrate plane. Both of crystallite size and lattice strain have been determined in terms of Voight method of the main peak. The optical constants, refractive index (n), and extinction coefficient (k) have been determined using envelope method. The optical absorption data indicates an allowed direct inter – band transition near the absorption edge with an optical energy gap that decreases continuously from 3.572 to 3.767 eV. Both of optical constants and energy gap show thickness dependence that can be explained in terms of structure parameters, crystallite size, and lattice strain.

  3. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Yuankun, E-mail: yuan.kun.zhu@gmail.com [Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080 (China); Plasma Applications Group, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Mendelsberg, Rueben J. [Plasma Applications Group, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Zhu Jiaqi, E-mail: zhujq@hit.edu.cn [Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080 (China); Han Jiecai [Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080 (China); Anders, Andre [Plasma Applications Group, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer High quality CdO:In films were prepared on glass by pulsed filtered cathodic arc. Black-Right-Pointing-Pointer 230 nm thick films show low resistivity of 7.23 Multiplication-Sign 10{sup -5} {Omega} cm and mobility of 142 cm{sup 2}/Vs. Black-Right-Pointing-Pointer In-doping significantly improves the conductivity and extends the transparent range. Black-Right-Pointing-Pointer Film crystalline quality is maintained with increasing In concentration. Black-Right-Pointing-Pointer The pulsed arc-grown CdO:In show excellent reproducibility of film properties. - Abstract: Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein-Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 Multiplication-Sign 10{sup -5} {Omega} cm, high electron mobility of 142 cm{sup 2}/Vs, and mean transmittance over 80% from 500 to 1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  4. The activation of thin film CdTe solar cells using alternative chlorine containing compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B., E-mail: B.Maniscalco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); Abbas, A.; Bowers, J.W.; Kaminski, P.M.; Bass, K. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); West, G. [Department of Materials, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom)

    2015-05-01

    The re-crystallisation of thin film cadmium telluride (CdTe) using cadmium chloride (CdCl{sub 2}) is a vital process for obtaining high efficiency photovoltaic devices. However, the precise micro-structural mechanisms involved are not well understood. In this study, we have used alternative chlorine-containing compounds to determine if these can also assist the re-crystallisation of the CdTe layer and to understand the separate roles of cadmium and chlorine during the activation. The compounds used were: tellurium tetrachloride (TeCl{sub 4}), cadmium acetate (Cd(CH{sub 3}CO{sub 2}){sub 2}), hydrochloric acid (HCl) and zinc chloride (ZnCl{sub 2}). TeCl{sub 4} was used to assess the role of Cl and the formation of a Te-rich outer layer which may assist the formation of the back contact. (Cd(CH{sub 3}CO{sub 2}){sub 2}) and HCl were used to distinguish between the roles of cadmium and chlorine in the process. Finally, ZnCl{sub 2} was employed as an alternative to CdCl{sub 2}. We report on the efficacy of using these alternative Cl-containing compounds to remove the high density of planar defects present in untreated CdTe. - Highlights: • Cadmium chloride (CdCl{sub 2}) activation treatment • Alternative chlorine containing compounds • Microstructure analysis and electrical performances.

  5. Quantum Confinement in Cadmium Selenide Multilayer Thin Films Using Physical Vapour Deposition Method

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2012-06-01

    Full Text Available Nanocrystals of CdSe have been produced in SiOx matrix layer and in ZnSe heterostructure layer by thermal evaporation method. Structural studies were done by X-ray diffractometer. Quantum confinement effect of CdSe nanocrystals was analyzed from optical studies. Bulk CdSe has band-gap energy of 1.756 eV that can be shifted to larger values by reducing the crystal size to dimensions smaller than the Bohr radius of the exciton. Experimentally measured band-gap shifts with respect to the bulk value for quantum dot thin films are compared with the predictions of the effective mass approximation model (i.e., Brus model and Quantum mechanical model. Sizes of the crystallites calculated from both models were coincident with each other.

  6. Microstructure parameters and optical properties of cadmium ferrite thin films of variable thickness

    Science.gov (United States)

    Shaaban, E. R.

    2014-06-01

    CdFe2O4 thin films of different thicknesses were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size, and microstrain were calculated. It is observed that both the crystallite size increases and microstrain increase with increasing with the film thickness. The fundamental optical parameters like absorption coefficient and optical band gap are calculated in the strong absorption region of transmittance and reflectance spectrum. The refractive indices have been evaluated in terms of the envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index can be extrapolated by the Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. The refractive index, n, increases on increasing the film thickness up to 733 nm and the variation of n with higher thickness lies within the experimental errors.

  7. Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rajammal, R. [Department of Physics, M.V.M Govt. Arts College for Women, Dindigul-624001 (India); Savarimuthu, E., E-mail: savari56@gmail.com; Arumugam, S., E-mail: savari56@gmail.com [Department of Physcis, Gandhigram Rural Institute, Gandhigram-624302 (India)

    2014-04-24

    The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10{sup −4}Ω cm and a maximum carrier concentration of 1.20×10{sup 20}cm{sup −3} have been realized.

  8. Micro-structural characterization of annealed cadmium-zinc oxide thin films obtained by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Gandarilla, F.; Morales-Acevedo, Arturo; Vigil, O.; Hesiquio-Garduno, M.; Vaillant, L.; Contreras-Puente, G

    2003-02-28

    The structural properties of annealed (ZnO){sub x}(CdO){sub 1-x} thin films are studied by x-ray diffraction methods. The films were obtained by spray pyrolysis using different values for the nominal composition (x), and then they were annealed at 450 deg. C from 0 to 120 min. The structural analysis confirms previous results on the formation of a homogeneously mixed oxide semiconductor, but in which crystalline and amorphous phases co-exist for both CdO and ZnO. In this work, we show that for annealed films there is a strong interaction between the amorphous, the hexagonal ZnO and the cubic CdO phases regarding the lattice constants and the crystallite growth rate. In the annealed films, for x{<=}0.5 the optical behavior is mainly controlled by the CdO phase, so that there is a reduction of the effective band-gap of the material when the CdO crystallite size is increased, possibly due to grain size effects. On the other hand, for x>0.5 the band-gap behavior is mainly determined by the variation of the ZnO crystallite lattice parameters and the relative volumetric concentration of amorphous and crystalline ZnO in the film.

  9. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998

    Energy Technology Data Exchange (ETDEWEB)

    Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)

    1998-08-01

    Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

  10. GEOLOGY OF THE FLORENCIA GOLD – TELLURIDE DEPOSIT (CAMAGÜEY, CUBA AND SOME METALLURGICAL CONSIDERATIONS

    Directory of Open Access Journals (Sweden)

    López K Jesús M.

    2006-12-01

    Full Text Available This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after beneficiation and flotation of samples from these sectors.
    It is shown that gold deposits of the Cretaceous Volcanic Arc of Cuba largely consist of native gold, telluride and pyrite, where arsenopyrite is almost absent. Traces of lead, zinc and cadmium are present in the periphery of the main ore zones.

  11. Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O.; Sanchez-Meza, E.; Sastre-Hernandez, J.; Cruz-Gandarilla, F. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico, D. F. (Mexico); Marin, E. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, 11500 Mexico, D. F. (Mexico)], E-mail: emarin63@yahoo.es; Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico, D. F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico, D. F. (Mexico); Calderon, A. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, 11500 Mexico, D. F. (Mexico)

    2008-04-30

    Bi doped cadmium telluride (CdTe:Bi) thin films were grown on glass-substrates by the close space vapour transport method. CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi concentration in the range between 1 x 10{sup 17} and 8 x 10{sup 18} cm{sup -3}, were used in powder form for CdTe:Bi thin film deposition. Dark conductivity and photoconductivity measurements in the 90-300 K temperature range and determination by photoacoustic spectroscopy of the optical-absorption coefficient of the films in the 1.0 to 2.4 eV spectral region were carried out. The influence of Bi doping levels upon the intergrain barrier height and other associated grain boundary parameters of the polycrystalline CdTe:Bi thin films were determined from electrical, optical and morphological characterization.

  12. Dendritic tellurides acting as antioxidants

    Institute of Scientific and Technical Information of China (English)

    XU Huaping; WANG Yapei; WANG Zhiqiang; LIU Junqiu; Mario Smet; Wim Dehaen

    2006-01-01

    We have described the synthesis of a series of poly(aryl ether) dendrimers with telluride in the core and oligo(ethylene oxide) chains at the periphery which act as glutathione peroxidase (GPx) mimics. These series of compounds were well characterized by 1H-NMR, 13C-NMR and ESI-MS. Using different ROOH (H2O2, cumene hydroperoxide) for testing the antioxidizing properties of these compounds, we have found that from generation 0 to 2, the activity of the dendritic GPx mimics first decreased and then increased. This can be explained on the basis of a greater steric hindrance, going from generation 0 to 1, and stronger binding interactions going from generation 1 to 2. In other words, there exists a balance between binding interactions and steric hindrance that may optimize the GPx activity.

  13. Laser induced damage studies in mercury cadmium telluride

    Science.gov (United States)

    Garg, Amit; Kapoor, Avinashi; Tripathi, K. N.; Bansal, S. K.

    2007-10-01

    We have investigated laser induced damage at 1.06 μm laser wavelength in diamond paste polished (mirror finish) and carborundum polished Hg0.8Cd0.2Te (MCT) samples with increasing fluence as well as number of pulses. Evolution of damage morphology in two types of samples is quite different. In case of diamond paste polished samples, evolution of damage morphological features is consistent with Hg evaporation with transport of Cd/Te globules towards the periphery of the molten region. Cd/Te globules get accumulated with successive laser pulses at the periphery indicating an accumulation effect. Real time reflectivity (RTR) measurement has been done to understand melt pool dynamics. RTR measurements along with the thermal profile of the melt pool are in good agreement with thermal melting model of laser irradiated MCT samples. In case of carborundum polished samples, laser damage threshold is significantly reduced. Damage morphological features are significantly influenced by surface microstructural condition. From comparison of the morphological features in the two cases, it can be inferred that laser processing of MCT for device applications depends significantly on surface preparation conditions.

  14. Metal Contacts to Cadmium Telluride (CdTe).

    Science.gov (United States)

    1987-10-01

    spectra were taken at, photon energy of 100 *V. -18- 0 v 4 0 *4) W 0 * ... W oi- tipo ,vlfIm#ents (see fig 11) indicates a strong out-diffusion of Te...8217 and I. is given by moderately doped Schottky diodes leads to a systematic error in the value of the barrier height obtained. By taking I’ = SAT 2 exp

  15. Far Infrared Mercury-Cadmium-Telluride Photoconductive Detectors.

    Science.gov (United States)

    1980-09-01

    mobl come, v~r, donipŕ Sh totmid c clmtui Mistime Imduileg Uhwtksj-bmd ,wmblund.. and imeelty 5 value of 0.4 us. Below 30 K the lifetime increases...Laboratories), 2) D. L. Smith (California Institute of Technology ), 3) P. M. Raccah (University of Illinois at Chicago Circle), 4) R. E. Longshore (Night

  16. Theoretical Investigation of Point Defects of Mercury Cadmium Telluride.

    Science.gov (United States)

    1985-11-01

    J.C. Phillips and L. Kleinman , Phys. Rev. 116, 287(1959). 46. B.J. Austin, V. Heine, and L.J. Sham, "General theory of pseudopotentials," Phys, Rev. 127...R.A. Logan, and J.R. Arthur ,Jr., "The lower conduction band structure of (AI,Ga)As," Inst. Phys. Conf. Ser. No. 33a, 210(1977). 82.M.H. Weiler

  17. A portable cadmium telluride multidetector probe for cardiac function monitoring

    CERN Document Server

    Arntz, Y; Dumitresco, B; Eclancher, B; Prat, V

    1999-01-01

    A new nuclear stethoscope based on a matrix of small CdTe semiconductor detectors has been developed for studying the cardiac performance by gamma ventriculography at the equilibrium, in rest and stress conditions, in the early and recovery phases of the coronary disease and to follow the long-term therapy. The light-weight probe consists of an array of 64 detectors 5x5x2 mm grouped in 16 independent units in a lead shielded aluminum box including 16 preamplifiers. The probe is connected to an electronic box containing DC power supply, 16 channel amplifiers, discriminators and counters, two analog-triggering ECG channels, and interface to a PC. The left ventricle activity is, preferentially, detected by using a low-resolution matching convergent collimator. A physical evaluation of the probe has been performed, both with static tests and dynamically with a hydraulic home-built model of beating heart ventricle paced by a rhythm simulator. The sum of the 16 detectors activity provided a radiocardiogram (RCG) wh...

  18. A surface study of mercury-cadmium-telluride

    Science.gov (United States)

    Lopes, V. C.

    1985-12-01

    Single crystals of Hg (sub 1-x) Cd (sub x) Te were studied to determine how changes in the surface conditions affected electrical properties, infrared detector grade material was used to examine the effects of changes in the surface charge density on electrical l/f noise. The surface charge density which was controlled by the pH of the aqueous solution was measured in a zeta meter which operated much like a Millikan oil drop experiment. The electrophoresis zeta potential measurements on (HgCd)Te have identified the active surface oxide as TeO2 and has also revealed information on the surface chemistry. Electrical l/f noise in-(HgCd)Te was found to be dominated by bulk and not surface effects at room temperature. Laser Raman and Auger spectroscopy were used to assess mechanical surface damage and anodic oxide composition.

  19. a Surface Study of Mercury-Cadmium Telluride.

    Science.gov (United States)

    Lopes, Vincent C.

    Single crystals of Hg(,1-x)Cd(,x)Te were studied to determine how changes in the surface conditions affected electrical properties. Infrared detector grade material from Honeywell Radiation Center (x = 0.2, bandgap near 10(mu)m) was used to examine the effects of changes in the surface charge density on electrical l/f noise. The surface charge density which was controlled by the pH of the aqueous solution was measured in a zeta meter which operated much like a Millikan oil drop experiment. The electrophoresis zeta potential measurements on (HgCd)Te have identified the active surface oxide as TeO(,2) and has also revealed information on the surface chemistry. An experimental fit yielded the dissociation constant of tellurous acid which was the result of TeO(,2) combining with H(,2)O. The dissociation of tellurous acid was responsible for the measured surface charge densities and the surface chemistry from pH = 1 to pH = 8. At pH = 1, the surface was H(,3)TeO(,3)('+). At pH = 1.5, the surface was H(,2)TeO(,3) which gave the neutral point, PZZP (Point of Zero Zeta Potential). With the pH between 2 and 6, the surface was HTeO(,3)('-). As the pH was changed to 7 and greater, the surface was TeO(,3)-. Electrical l/f noise in (HgCd)Te was found to be dominated by bulk and not surface effects at room temperature. l/f noise measure- ments were made in an air ambient and in various electrolytic solu- tions which produced different surface charge conditions. The l/f noise voltage did not change within experimental error as the surface charge density was changed (due to major changes in the surface chemistry) by pH; at pH = 7, ((sigma)(,s) = -3 x 10('12) e/cm('2) due to TeO(,3)-), with the pH between 2 and 6 (-1 x 10('12) e/cm('2) < (sigma)(,s) < -2 x 10('12) e/cm('2) due to HTeO(,3)('-)), and to pH = 1.5 ((sigma)(,s) = 0 due to H(,2)TeO(,3)). Laser Raman and Auger spectroscopy were used to assess mechanical surface damage and anodic oxide composition. Surface damage on (HgCd)Te produced dramatic changes in the Raman spectrum which was restored to its pre-damaged state by use of the bromine-methanol etch. Auger spectroscopy of anodically oxidized (HgCd)Te further confirmed that the tellurium surface oxide was TeO(,2). The ratio of the atomic concentrations of Te to O in the oxide was found to be approximately 1 to 2.

  20. Identification of critical stacking faults in thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  1. Cadmium Alternatives

    Science.gov (United States)

    2012-08-01

    accessories) and be non- reflective Cadmium Replacements – Zinc Nickel Passivated Zinc Nickel Non-hex chrome passivate of high interest, but...for Change Cadmium passivated with hexavalent chromium has been in use for many decades Cadmium is toxic , and is classified as a priority...including cadmium! Cadmium Replacements (With MIL-DTL-38999 Designations) Zn/Ni (Class Z) Per ASTM B 841, type D (black) Electroless Nickel plus

  2. Formation of Semimetallic Cobalt Telluride Nanotube Film via Anion Exchange Tellurization Strategy in Aqueous Solution for Electrocatalytic Applications.

    Science.gov (United States)

    Patil, Supriya A; Kim, Eun-Kyung; Shrestha, Nabeen K; Chang, Jinho; Lee, Joong Kee; Han, Sung-Hwan

    2015-11-25

    Metal telluride nanostructures have demonstrated several potential applications particularly in harvesting and storing green energy. Metal tellurides are synthesized by tellurization process performed basically at high temperature in reducing gas atmosphere, which makes the process expensive and complicated. The development of a facile and economical process for desirable metal telluride nanostructures without complicated manipulation is still a challenge. In an effort to develop an alternative strategy of tellurization, herein we report a thin film formation of self-standing cobalt telluride nanotubes on various conducting and nonconducting substrates using a simple binder-free synthetic strategy based on anion exchange transformation from a thin film of cobalt hydroxycarbonate nanostructures in aqueous solution at room temperature. The nanostructured films before and after ion exchange transformation reaction are characterized using field emission scanning electron microscope, energy dispersive X-ray analyzer, X-ray photoelectron spectroscopy, thin film X-ray diffraction technique, high resolution transmission electron microscope, and selected area electron diffraction analysis technique. After the ion exchange transformation of nanostructures, the film shows conversion from insulator to highly electrical conductive semimetallic characteristic. When used as a counter electrode in I3(-)/I(-) redox electrolyte based dye-sensitized solar cells, the telluride film exhibits an electrocatalytic reduction activity for I3(-) with a demonstration of solar-light to electrical power conversion efficiency of 8.10%, which is highly competitive to the efficiency of 8.20% exhibited by a benchmarked Pt-film counter electrode. On the other hand, the telluride film electrode also demonstrates electrocatalytic activity for oxygen evolution reaction from oxidation of water.

  3. Thin film PV standing tall side-by-side with multi-crystalline silicon: also in terms of reliability

    Science.gov (United States)

    Dhere, Neelkanth G.; Ward, Allan; Wieting, Robert; Guha, Subhendu; Dhere, Ramesh G.

    2015-09-01

    Triple junction hydrogenated amorphous silicon (a-Si:H) have shown exceptionally good reliability and durability. Cadmium telluride, CdTe PV modules have shown the lowest production cost without subsidies. Copper-indium gallium selenide sulfide (CIGS) and cadmium telluride (CdTe) cells and modules have been showing efficiencies equal or greater than those of multi-crystalline, (mx-Si), PV modules. Early generation CIGS and CdTe PV modules had a different qualification standard 61646 as compared to 61215 for crystalline silicon, (c-Si), PV modules. This, together with small vulnerability in harsh climates, was used to create doubts about their reliability. Recently CdTe and CIGS glass-to-glass modules have passed the rigorous accelerated tests, especially as long as the edge seals are not compromised. Moreover, the cumulative shipment of these modules is more than 12 GW demonstrating the customer confidence in these products. Hence it can be stated that also in terms of the reliability and durability all the thin film PV modules stand tall and compare favorably with mx-Si.

  4. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    Science.gov (United States)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  5. Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Zybała R.

    2017-06-01

    Full Text Available Antimony telluride (Sb2Te3 is an intermetallic compound crystallizing in a hexagonal lattice with R-3m space group. It creates a c lose packed structure of an ABCABC type. As intrinsic semiconductor characterized by excellent electrical properties, Sb2Te3 is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure, antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2Te3 in various forms (polycrystalline, single crystal or thin film are the most promising methods for improving thermoelectric properties of Sb2Te3. Applications of Sb2Te3 in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2Te3 were also presented here. The anisotropy (packed structure and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2Te3 thin films for optical uses have been also made.

  6. Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goodman, Samuel M.; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Noh, Hyunwoo [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Cha, Jennifer N. [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); BioFrontiers Institute, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

    2015-02-23

    Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

  7. CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

    Energy Technology Data Exchange (ETDEWEB)

    Rotaru, Andrei [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Mietlarek-Kropidlowska, Anna [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Constantinescu, Catalin, E-mail: catalin.constantinescu@inflpr.ro [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Scarisoreanu, Nicu; Dumitru, Marius [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Strankowski, Michal [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Rotaru, Petre [University of Craiova, Faculty of Physics, 13 A.I. Cuza St., Craiova RO-200585, Dolj (Romania); Ion, Valentin [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Vasiliu, Cristina [INOE 2000 - National Institute for Optoelectronics, 1 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Becker, Barbara [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Dinescu, Maria [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania)

    2009-05-15

    Thin films of [Cd{l_brace}SSi(O-Bu{sup t}){sub 3}{r_brace}(S{sub 2}CNEt{sub 2})]{sub 2}, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.

  8. Selective and low temperature transition metal intercalation in layered tellurides

    Science.gov (United States)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-12-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid.

  9. A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

    Energy Technology Data Exchange (ETDEWEB)

    Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin film research Lab, U.C. College, Aluva, Kerala (India); Pradeep, B., E-mail: bp@cusat.ac.in [Solid State Physics Laboratory, Cochin University of science and Technology, Cochin (India); Shripathi, T., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com; Ganesan, V., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com [UGC-DAE CSR, Khandwa Road, Indore, 452001, Madhya Pradesh (India)

    2014-10-15

    Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ∼50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2 to 2.7, suggesting possibility of band gap engineering in the n-type films.

  10. Simultaneous Automatic Electrochemical Detection of Zinc, Cadmium, Copper and Lead Ions in Environmental Samples Using a Thin-Film Mercury Electrode and an Artificial Neural Network

    Directory of Open Access Journals (Sweden)

    Jiri Kudr

    2014-12-01

    Full Text Available In this study a device for automatic electrochemical analysis was designed. A three electrodes detection system was attached to a positioning device, which enabled us to move the electrode system from one well to another of a microtitre plate. Disposable carbon tip electrodes were used for Cd(II, Cu(II and Pb(II ion quantification, while Zn(II did not give signal in this electrode configuration. In order to detect all mentioned heavy metals simultaneously, thin-film mercury electrodes (TFME were fabricated by electrodeposition of mercury on the surface of carbon tips. In comparison with bare electrodes the TMFEs had lower detection limits and better sensitivity. In addition to pure aqueous heavy metal solutions, the assay was also performed on mineralized rock samples, artificial blood plasma samples and samples of chicken embryo organs treated with cadmium. An artificial neural network was created to evaluate the concentrations of the mentioned heavy metals correctly in mixture samples and an excellent fit was observed (R2 = 0.9933.

  11. [Predicting the cadmium bioavailability in the soil of sugarcane field based on the diffusive gradients in thin films with binding phase of sodium polyacrylate].

    Science.gov (United States)

    Wang, Fang-Li; Song, Ning-Ning; Zhao, Yu-Jie; Zhang, Chang-Bo; Shen, Yue; Liu, Zhong-Qi

    2012-10-01

    The diffusive gradients in thin films (DGT) technique with solid-state binding phases has been widely used for in situ collection and measurement of available heavy metals in waters, soils or sediments, whereas DGT with liquid binding phase is primarily used in the in situ analysis of heavy metals in waters. In this paper, rhizosphere soils of sugarcane were collected in Guangxi and the concentrations of cadmium (Cd) were determined by DGT with a solid-state binding phase of chelex100 (chelex100-DGT) and modified DGT with a liquid binding phase of sodium polyacrylate (CDM-PAAS-DGT). The result showed that the Cd contents in soils measured by DGT with both binding phases and Cd in the roots, leaves and unpolished stems of sugarcane had significant positive correlation. The extraction ability of the CDM-PAAAS-DGT was much higher than that of the chelex100-DGT. In addition, multivariate analyses were used to assess the impact of pH, cation exchange capacity (CEC), soil organic matter (OM) and texture. Two principal components were extracted and the linear regression models were established. The Cd bioavailability in soils could be accurately predicted by the CDM-PAAAS-DGT technique, which expanded its applicable area.

  12. Post-growth CdCl₂ treatment on CdTe thin films grown on graphene layers using a close-spaced sublimation method.

    Science.gov (United States)

    Jung, Younghun; Yang, Gwangseok; Chun, Seungju; Kim, Donghwan; Kim, Jihyun

    2014-05-05

    We investigated the morphological, structural and optical properties of CdCl₂-treated cadmium telluride (CdTe) thin films deposited on defective graphene using a close-spaced sublimation (CSS) system. Heat treatment in the presence of CdCl₂ caused recrystallization of CSS-grown CdTe over the as-deposited structures. The preferential (111) orientation of as-deposited CdTe films was randomized after post-growth CdCl₂ treatment. New small grains (bumps) on the surface of CdCl₂-treated CdTe films were ascribed to nucleation of the CdTe grains during the CdCl₂ treatment. The properties of as-deposited and CdCl₂-treated CdTe films were characterized by room temperature micro-photoluminescence, micro-Raman spectroscopy, scanning electron microscopy, and X-ray diffraction analysis. Our results are useful to demonstrate a substrate configuration CdTe thin film solar cells.

  13. Electronic-structure calculations of large cadmium chalcogenide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Frenzel, Johannes [Lehrstuhl fuer Theoretische Chemie, Ruhr-Universitaet Bochum (Germany); Joswig, Jan-Ole [Physikalische Chemie, Technische Universitaet Dresden (Germany)

    2012-02-15

    In this paper, we will review our studies of large cadmium chalcogenide nanoparticles and present some new results on cadmium telluride systems. All calculations have been performed using density-functional based methods. The studies deal with the structural properties of saturated and unsaturated nanoparticles where the surfactants generally are hydrogen atoms or thiol groups. We have focused on the investigation of the density of states, the Mulliken charges, the eigenvalue spectra, and the spatial distributions of the frontier orbitals. Optical excitation spectra of pure CdS and CdSe/CdS core-shell systems have been calculated using a linear-response formalism. The reviewed studies are compared to the state of the art of modeling large cadmium chalcogenide particles. Optical excitations in large saturated cadmium chalcogenide nanoparticles with several thousand atoms. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Insight into the origin of magnetism in Iron-doped cadmium sulfide thin films from first principles calculations

    Science.gov (United States)

    Kanoun, Mohammed Benali

    2017-03-01

    We report a theoretical study of electronic structures and magnetic properties of Fe-doped CdS (10-10) thin films using first principle calculations within the density functional theory. It is shown that Fe atoms occupying Cd sites prefer to reside on the surface and couple antiferromagnetically. However, our results show the existence of competition between ferromagnetic and antiferromagnetic coupling because of the smaller total energy difference. Moreover, our density of states shows the existence of a simultaneous hybridization between the Fe d and S p states near the Fermi level.

  15. Molecular modelling of some para-substituted aryl methyl telluride and diaryl telluride antioxidants

    Science.gov (United States)

    Frisell, H.; Engman, L.

    2000-08-01

    Quantum mechanical calculations using the 3-21G(d) basis-set were performed on some p-substituted diaryl tellurides and aryl methyl tellurides, and the corresponding cationic radicals of these compounds. Calculated relative radical stabilization energies (RSE:s) were shown to correlate with experimentally determined peak oxidation potentials ( R=0.93) and 125Te-NMR chemical shifts ( R=0.91). A good correlation was also observed between the RSE:s and the Mulliken charge at the tellurium atoms ( R=0.97). The results showed that Hartree-Fock calculations using the 3-21G(d) basis set was sufficiently accurate for estimating the impact of p-substituents in aryl tellurides on experimentally determined properties such as peak oxidation potentials and 125Te-NMR chemical shifts.

  16. Cadmium sulfide nanowires for the window semiconductor layer in thin film CdS-CdTe solar cells.

    Science.gov (United States)

    Liu, Piao; Singh, Vijay P; Jarro, Carlos A; Rajaputra, Suresh

    2011-04-08

    Thin film CdS/CdTe heterojunction device is a leading technology for the solar cells of the next generation. We report on two novel device configurations for these cells where the traditional CdS window layer is replaced by nanowires (NW) of CdS, embedded in an aluminum oxide matrix or free-standing. An estimated 26.8% improvement in power conversion efficiency over the traditional device structure is expected, primarily because of the enhanced spectral transmission of sunlight through the NW-CdS layer and a reduction in the junction area/optical area ratio. In initial experiments, nanostructured devices of the two designs were fabricated and a power conversion efficiency value of 6.5% was achieved.

  17. Enhanced diode performance in cadmium telluride–silicon nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Gullu, Hasan Huseyin [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2015-09-25

    Highlights: • Vertically well oriented Si nanowire arrays on Si wafer were synthesized. • Semiconductor CdTe thin film/Si nanowire devices were successfully fabricated. • Optoelectronic properties of the fabricated devices were investigated. • Enhanced electrical and diode properties for the devices were observed. • The devices exhibited strong photosensitivity in near infrared region. - Abstract: We report on the structural and optoelectronic characteristics and photodetection properties of cadmium telluride (CdTe) thin film/silicon (Si) nanowire heterojunction diodes. A simple and cost-effective metal-assisted etching (MAE) method is applied to fabricate vertically oriented Si nanowires on n-type single crystalline Si wafer. Following the nanowire synthesis, CdTe thin films are directly deposited onto the Si nanowire arrays through RF magnetron sputtering. A comparative study of X-ray diffraction (XRD) and Raman spectroscopy shows the improved crystallinity of the CdTe thin films deposited onto the Si nanowires. The fabricated nanowire based heterojunction devices exhibit remarkable diode characteristics, enhanced optoelectronic properties and photosensitivity in comparison to the planar reference device. The electrical measurements revealed that the diodes have a well-defined rectifying behavior with a superior rectification ratio of 10{sup 5} at ±5 V and a relatively small ideality factor of n = 1.9 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open circuit voltage of 120 mV is also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire based device exhibits a distinct responsivity (0.35–0.5 A W{sup −1}) and high detectivity (6 × 10{sup 12}−9 × 10{sup 12} cm Hz{sup 1/2} W{sup −1}) in near-infrared wavelength region. The enhanced device performance and photosensitivity is believed to be due to three-dimensional nature of the interface between

  18. Thickness-induced structural phase transformation of layered gallium telluride.

    Science.gov (United States)

    Zhao, Q; Wang, T; Miao, Y; Ma, F; Xie, Y; Ma, X; Gu, Y; Li, J; He, J; Chen, B; Xi, S; Xu, L; Zhen, H; Yin, Z; Li, J; Ren, J; Jie, W

    2016-07-28

    The thickness-dependent electronic states and physical properties of two-dimensional materials suggest great potential applications in electronic and optoelectronic devices. However, the enhanced surface effect in ultra-thin materials might significantly influence the structural stability, as well as the device reliability. Here, we report a spontaneous phase transformation of gallium telluride (GaTe) that occurred when the bulk was exfoliated to a few layers. Transmission electron microscopy (TEM) results indicate a structural variation from a monoclinic to a hexagonal structure. Raman spectra suggest a critical thickness for the structural transformation. First-principle calculations and thermodynamic analysis show that the surface energy and the interlayer interaction compete to dominate structural stability in the thinning process. A two-stage transformation process from monoclinic (m) to tetragonal (T) and then from tetragonal to hexagonal (h) is proposed to understand the phase transformation. The results demonstrate the crucial role of interlayer interactions in the structural stability, which provides a phase engineering strategy for device applications.

  19. Photoluminescence study of copper-doped cadmium-telluride and related stability issues for cadmium-sulfide/cadmium-telluride solar-cell devices

    Science.gov (United States)

    Grecu, Dan S.

    Lifetime predictions for CdTe photovoltaic modules represent a complex problem, partly due to the fact that a fundamental understanding of the CdTe material properties and device operation is far from being complete. One of the stability issues actively investigated is the use of Cu for the formation of a back contact. Cu is one of the few good p-dopants for CdTe, which, by forming a p+ layer at the surface of the CdTe, relaxes the requirement for a high work function metal at the back contact. On the other hand, it is known that Cu is a fast diffuser in CdTe and it was suggested that Cu migration within the device could lead to some of the observed degradation effects. in this work, we explore Cu states and migration effects in CdTe and CdS/CdTe devices using photoluminescence (PL) as the main investigative method. We confirm the assignment of several Cu-related PL transitions observed in the CdTe spectrum, namely, a bound exciton transition (X, CUCd) at 1.59eV and a donor-acceptor pair (DAP) (D, CuCd) at 1.45eV. In addition, we observe and characterize new effects related to Cu diffusion in CdTe: (a) the quenching of a DAP, Cd-vacancy related band, at 1.55eV, and (b) the formation of a new strong lattice-coupled transition at 1.555eV. These effects, we suggest, are consistent with Cu atoms occupying substitutional positions on the Cd sublattice and/or forming Frenkel pairs of the type CUi-VCd- with Cd vacancies. Similar spectral characteristics are observed for the low-S-content CdS-CdTe alloy existent in the vicinity of the junction in solar-cell devices. Using Cu-induced changes in the PL spectrum, we propose that Cu diffuses rapidly through an interstitial mechanism, as a positively charged ion, throughout the CdTe and possibly the CdS layer during the back-contact fabrication procedure. Applied electrical fields can reverse the direction of Cu migration leading to device performance degradation. In addition, it was found that Cu-doped CdTe samples exhibit a substantial, thermally restorable "aging" behavior. PL results indicate that Cu acceptor states decay simultaneously with the formation of nonradiative recombination centers.

  20. Characterization of CdS Thin-Film in High Efficient CdS/CdTe Solar Cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-07-01

    Cadmium sulfide (CdS) thin films are the most commonly used window materials for high efficient cadmium telluride (CdTe) and chalcopyrite polycrystalline thin-film photovoltaic devices. High efficient CdS/CdTe solar cells with thin CdS films have been developed using ultrathin CdS films with a thickness of less than 0.1 μm. CdS films were deposited on transparent conductive oxide (TCO)/glass substrates by the metal organic chemical vapor deposition (MOCVD) technique. CdTe films were subsequently deposited by the close-spaced sublimation (CSS) technique. The screen printing and sintering method fabricated carbon and silver electrodes. Cell performance depends primarily on the electrical and optical properties of CdS films. Therefore we started to develop higher-quality CdS films and found clear differences between high- and low-quality CdS films from the analyses of scanning electron microscope (SEM), atomic force microscope (AFM), secondary ion mass spectroscopy (SIMS), thermal desorption spectrometry (TDS) and Fourier transforms-infrared spectrometry (FT-IR) measurements. As a result of controlling the quality of CdS films, a photovoltaic conversion efficiency of 10.5% has been achieved for size of 1376 cm2 of the solar cells under the Air Mass (AM) 1.5 conditions of the Japan Quality Assurance Organization.

  1. Characterization of CdS thin film in high efficient CdS/CdTe solar cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-06-01

    Cadmium sulfide (CdS) thin film is the most commonly used window material for high-efficient cadmium telluride (CdTe) thin-film photovoltaic devices. High-efficient CdS/CdTe solar cells have been developed using ultra-thin CdS films having a thickness of below 0.1 μm. CdS film is deposited on transparent conductive oxide (TCO) film coated glass substrates by the metal organic chemical vapor deposition (MOCVD) technique, CdTe film is subsequently deposited by the close-spaced sublimation (CSS) technique. Finally, carbon and Ag-In electrodes are fabricated by the screen printing and sintering method. Cell performance depends primarily on the electrical and optical properties of CdS film, and hence we started to develop higher quality CdS film and found out clear differences between high- and low-quality CdS films from various analyses: SEM, AFM, SIMS, TDS and FT-IR. As a result of controlling qualities of CdS films, photovoltaic conversion efficiency of 10.5% has been achieved for a size of 1376 cm 2 of the solar module under air mass (AM) 1.5 conditions by the Japan Quality Assurance Organization (JQA).

  2. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  3. Insights into cadmium diffusion mechanisms in two-stage diffusion profiles in solar-grade Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Biderman, N. J.; Sundaramoorthy, R.; Haldar, Pradeep [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States); U.S. Photovoltaic Manufacturing Consortium, Albany, New York 12203 (United States); Novak, Steven W.; Lloyd, J. R. [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)

    2015-12-07

    Cadmium diffusion experiments were performed on polished copper indium gallium diselenide (Cu(In,Ga)Se{sub 2} or CIGS) samples with resulting cadmium diffusion profiles measured by time-of-flight secondary ion mass spectroscopy. Experiments done in the annealing temperature range between 275 °C and 425 °C reveal two-stage cadmium diffusion profiles which may be indicative of multiple diffusion mechanisms. Each stage can be described by the standard solutions of Fick's second law. The slower cadmium diffusion in the first stage can be described by the Arrhenius equation D{sub 1} = 3 × 10{sup −4} exp (− 1.53 eV/k{sub B}T) cm{sup 2} s{sup −1}, possibly representing vacancy-meditated diffusion. The faster second-stage diffusion coefficients determined in these experiments match the previously reported cadmium diffusion Arrhenius equation of D{sub 2} = 4.8 × 10{sup −4} exp (−1.04 eV/k{sub B}T) cm{sup 2} s{sup −1}, suggesting an interstitial-based mechanism.

  4. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  5. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing.

    Science.gov (United States)

    Gutiérrez-Lazos, Claudio Davet; Ortega-López, Mauricio; Pérez-Guzmán, Manuel A; Espinoza-Rivas, A Mauricio; Solís-Pomar, Francisco; Ortega-Amaya, Rebeca; Silva-Vidaurri, L Gerardo; Castro-Peña, Virginia C; Pérez-Tijerina, Eduardo

    2014-01-01

    This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size). Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent). The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm(-1), which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm(-1) range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  6. Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

    Science.gov (United States)

    Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J.

    2016-07-01

    Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ɛ and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

  7. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  8. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  9. High-temperature thermoelectric behavior of lead telluride

    Indian Academy of Sciences (India)

    M P Singh; C M Bhandari

    2004-06-01

    Usefulness of a material in thermoelectric devices is temperature specific. The central problem in thermoelectric material research is the selection of materials with high figure-of-merit in the given temperature range of operation. It is of considerable interest to know the utility range of the material, which is decided by the degrading effect of minority carrier conduction. Lead telluride is among the best-known materials for use in the temperature range 400—900 K. This paper presents a detailed theoretical investigation of the role of minority carriers in degrading the thermoelectric properties of lead telluride and outlines the temperature range for optimal performance.

  10. Unconventional temperature enhanced magnetism in iron telluride

    Energy Technology Data Exchange (ETDEWEB)

    Zalinznyak, I. [Brookhaven National Laboratory (BNL); Xu, Zhijun [ORNL; Tranquada, John M. [Brookhaven National Laboratory (BNL); Gu, G. D. [Brookhaven National Laboratory (BNL); Tsvelik, A. [Brookhaven National Laboratory (BNL); Stone, Matthew B [ORNL

    2011-01-01

    Discoveries of copper and iron-based high-temperature superconductors (HTSC)1-2 have challenged our views of superconductivity and magnetism. Contrary to the pre-existing view that magnetism, which typically involves localized electrons, and superconductivity, which requires freely-propagating itinerant electrons, are mutually exclusive, antiferromagnetic phases were found in all HTSC parent materials3,4. Moreover, highly energetic magnetic fluctuations, discovered in HTSC by inelastic neutron scattering (INS) 5,6, are now widely believed to be vital for the superconductivity 7-10. In two competing scenarios, they either originate from local atomic spins11, or are a property of cooperative spin-density-wave (SDW) behavior of conduction electrons 12,13. Both assume clear partition into localized electrons, giving rise to local spins, and itinerant ones, occupying well-defined, rigid conduction bands. Here, by performing an INS study of spin dynamics in iron telluride, a parent material of one of the iron-based HTSC families, we have discovered that this very assumption fails, and that conduction and localized electrons are fundamentally entangled. In the temperature range relevant for the superconductivity we observe a remarkable redistribution of magnetism between the two groups of electrons. The effective spin per Fe at T 10 K, in the2 antiferromagnetic phase, corresponds to S 1, consistent with the recent analyses that emphasize importance of Hund s intra-atomic exchange15-16. However, it grows to S 3/2 in the disordered phase, a result that profoundly challenges the picture of rigid bands, broadly accepted for HTSC.

  11. 13.4% efficient thin-film CdS/CdTe solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Ferekides, C.; Wu, C. Q.; Britt, J.; Wang, C.

    1991-12-01

    Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.

  12. MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

    Science.gov (United States)

    Irvine, S. J. C.; Barrioz, V.; Lamb, D.; Jones, E. W.; Rowlands-Jones, R. L.

    2008-11-01

    This paper will review the chalcogenide thin film photovoltaic (PV) solar cells, based on cadmium telluride (CdTe) and copper indium diselenide (CIS) and discuss the potential for metalorganic chemical vapour deposition (MOCVD) to enable more advanced devices in the second generation of CdTe module production. The current generation of production methods is based on physical vapour deposition (PVD) or close-spaced sublimation (CSS). This paper concentrates on the less well-known topic of MOCVD of thin film chalcogenide cells, and in particular that of CdTe. Efficient CdTe PV solar cells (>10% AM1.5) have been demonstrated from deposition of the CdS, CdTe and CdCl 2 films in a single MOCVD chamber. The CdTe layer was doped with As and an additional high As concentration CdTe layer provides effective low resistance contacting without the need for wet etching the surface. The high level of flexibility in using MOCVD has been demonstrated where the CdS window layer has been alloyed with Zn to improve the blue response of the PV device and improve AM1.5 efficiency to 13.3%.

  13. Comparative study of Hg xCd 1-xTe films grown on CdTe thin films previously deposited from two different techniques

    Science.gov (United States)

    Ali, A.; Abbas Shah, N.; Maqsood, A.

    2009-04-01

    High quality cadmium telluride (CdTe) thin films were grown on glass substrates with two different techniques, two evaporation source (TES) and closed space sublimation (CSS). Further to the above mercury telluride (HgTe) was then deposited by using single source on both CdTe thin films for obtaining Hg xCd 1-xTe samples. The crystalline structure of the Hg xCd 1-xTe sample grown from CSS-CdTe showed the preferential (1 1 1) orientation with smoother and larger grain size than those of TES-CdTe. The optical transmission for TES-CdTe sample was above 90% in the 1000-1500 nm range whereas it was significantly below 80% for CSS-CdTe sample. The optical transmission for TES-Hg xCd 1-xTe and CSS-Hg xCd 1-xTe was ˜60%. The resistivity at room temperature of TES-CdTe and CSS-CdTe was ˜3.33×10 9 Ω cm and ˜2.20×10 8 Ω cm, respectively, while the resistivity of TES-Hg xCd 1-xTe and CSS-Hg xCd 1-xTe samples was ˜1.73 Ω cm and ˜5.34×10 5 Ω cm, respectively. The comparative study of ternary compound prepared with the above techniques has been carried out for the first time.

  14. Thin-film photovoltaic power generation offers decreasing greenhouse gas emissions and increasing environmental co-benefits in the long term.

    Science.gov (United States)

    Bergesen, Joseph D; Heath, Garvin A; Gibon, Thomas; Suh, Sangwon

    2014-08-19

    Thin-film photovoltaic (PV) technologies have improved significantly recently, and similar improvements are projected into the future, warranting reevaluation of the environmental implications of PV to update and inform policy decisions. By conducting a hybrid life cycle assessment using the most recent manufacturing data and technology roadmaps, we compare present and projected environmental, human health, and natural resource implications of electricity generated from two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in the United States (U.S.) to those of the current U.S. electricity mix. We evaluate how the impacts of thin films can be reduced by likely cost-reducing technological changes: (1) module efficiency increases, (2) module dematerialization, (3) changes in upstream energy and materials production, and (4) end-of-life recycling of balance of system (BOS). Results show comparable environmental and resource impacts for CdTe and CIGS. Compared to the U.S. electricity mix in 2010, both perform at least 90% better in 7 of 12 and at least 50% better in 3 of 12 impact categories, with comparable land use, and increased metal depletion unless BOS recycling is ensured. Technological changes, particularly efficiency increases, contribute to 35-80% reductions in all impacts by 2030.

  15. Cadmium and zinc relationships.

    Science.gov (United States)

    Elinder, C G; Piscator, M

    1978-08-01

    Cadmium and zinc concentrations in kidney and liver have been measured under different exposure situations in different species including man. The results show that zinc increases almost equimolarly with cadmium in kidney after long-term low-level exposure to cadmium, e.g., in man, horse, pig, and lamb. In contrast, the increase of zinc follows that of cadmium to only a limited extent, e.g., in guinea pig, rabbit, rat, mouse, and chicks. In liver, the cadmium--zinc relationship seems to be reversed in such a way that zinc increases with cadmium more markedly in laboratory animals than in higher mammals. These differences between cadmium and zinc relationships in humans and large farm animals and those in commonly used laboratory animals must be considered carefully before experimental data on cadmium and zinc relationships in laboratory animals can be extrapolated to humans.

  16. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd [Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205 (Bangladesh)

    2016-05-21

    polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.

  17. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-05-01

    polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.

  18. Bismuth Telluride and Its Alloys as Materials for Thermoelectric Generation

    Directory of Open Access Journals (Sweden)

    H. Julian Goldsmid

    2014-03-01

    Full Text Available Bismuth telluride and its alloys are widely used as materials for thermoelectric refrigeration. They are also the best materials for use in thermoelectric generators when the temperature of the heat source is moderate. The dimensionless figure of merit, ZT, usually rises with temperature, as long as there is only one type of charge carrier. Eventually, though, minority carrier conduction becomes significant and ZT decreases above a certain temperature. There is also the possibility of chemical decomposition due to the vaporization of tellurium. Here we discuss the likely temperature dependence of the thermoelectric parameters and the means by which the composition may be optimized for applications above room temperature. The results of these theoretical predictions are compared with the observed properties of bismuth telluride-based thermoelements at elevated temperatures. Compositional changes are suggested for materials that are destined for generator modules.

  19. Kelvin Probe Studies of Cesium Telluride Photocathode for AWA Photoinjector

    CERN Document Server

    Wisniewski, Eric; Yusof, Zikri; Spentzouris, Linda; Terry, Jeff; Harkay, Katherine

    2012-01-01

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (~50 nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin Probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating.

  20. Space processing of electronic materials. [determining ther themal conductivity of mercury cadmium tellurides and furnace design

    Science.gov (United States)

    Workman, G. L.; Holland, L. R.

    1981-01-01

    The relative values of thermal conductivity of solid and liquid HgCdTe are critically important in the design configuration of the furnaces used for Bridgman crystal growth. The thermal diffusivity of the material is closely linked to the conductivity by the defining relation D = k/rho c, where D is the diffusivity, K is the thermal conductivity, rho is the density, and c is the specific heat. The use of transient and periodic heating approaches to measure the diffusivity are explored. A system for securing and extracting heat from silica or glass tubes under high C vacuum conditions is described.

  1. Research of oxidation processes of a cadmium telluride film surface by ellipsometric method

    Science.gov (United States)

    Zabashta, Lubov A.; Opanasyuk, A. S.; Kharchenko, V. I.

    1997-04-01

    Kinetics of formation of an oxide on the CdTe surface was investigated during a sample exposition in air at temperatures Th equals 20 degrees C, 260 degrees C, 340 degrees C, 420 degrees C, for 200 hours. For nonoxide CdTe surface the following values of optical constants ns equals 2.6 and ks equals 0.6 are received. At a exposition of samples at room temperature a refractive index of an oxide film changed from nf equals 1.7 at initial stages of growth up to nf equals 2.37 after 200 hours oxidation. At all stages of oxidation process the monotone reduction of a refractive index of oxide layers at an increase of heating temperature is found out. During natural oxidation oxide layer thickness reaches 1.8 nm in the course of 20 hours. Hereafter oxide formation speed decreases that results in stabilization of its thickness. It is shown that the growth of the oxide phase is descried with the parabolic law and is checked with diffusion processes. To determine the energy of oxidation process activation the charts of dependence of logarithm of oxide film thickness upon inverse temperature at constant oxidation time were built. The presence of two areas of heating temperatures with different energy of oxidation process activation is established. The parameters of kinetic equation are determined which describe oxide film growth in low temperature and high temperature fields.

  2. Analysis of the traveling heater method for the growth of cadmium telluride

    Science.gov (United States)

    Peterson, Jeffrey H.; Fiederle, Michael; Derby, Jeffrey J.

    2016-11-01

    We discuss the development and implementation of a comprehensive mathematical model for the traveling heater method (THM) that is formulated to realistically represent the interactions of heat and species transport, fluid flow, and interfacial dissolution and growth under conditions of local thermodynamic equilibrium and steady-state growth. We examine the complicated interactions among zone geometry, continuum transport, phase change, and fluid flow driven by buoyancy. Of particular interest and importance is the formation of flow structures in the liquid zone of the THM that arise from the same physical mechanism as lee waves in atmospheric flows and demonstrate the same characteristic Brunt-Väisälä scaling. We show that flow stagnation and reversal associated with lee-wave formation are responsible for the accumulation of tellurium and supercooled liquid near the growth interface, even when the lee-wave vortex is not readily apparent in the overall flow structure. The supercooled fluid is posited to result in morphological instability at growth rates far below the limit predicted by the classical criterion by Tiller et al. for constitutional supercooling.

  3. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors.

    Science.gov (United States)

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-07

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution.

  4. Laser Damage in 8- to 14-Micron Mercury-Cadmium-Telluride Photovoltaic Detector Material

    Science.gov (United States)

    1976-01-20

    CSS ? C4AM Ez!CMCM7I PROJECT. =ASK(~ ~~o O~m. OARIAO.£AE & WORK Un’r MIMBZXS \\a-.al Research Laboratory I NRL Problem N01-36.501 Washington. D.C. 20375...therefore de- errained empirically in fitting tle data. The thermal conductivity K of R; CdTe varies con- iderably over the temperature range of interesL

  5. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  6. An ultrasensitive method for the determination of melamine using cadmium telluride quantum dots as fluorescence probes

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiafei; Li, Jin; Kuang, Huiyan; Feng, Lei; Yi, Shoujun; Xia, Xiaodong; Huang, Haowen [School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Key Laboratory of Theoretical Chemistry and Molecular Simulation of Ministry of Education of China, Hunan University of Science and Technology, Xiangtan 411201 (China); Chen, Yong; Tang, Chunran [School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Zeng, Yunlong, E-mail: yunlongzeng1955@126.com [School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Key Laboratory of Theoretical Chemistry and Molecular Simulation of Ministry of Education of China, Hunan University of Science and Technology, Xiangtan 411201 (China); State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)

    2013-11-13

    Graphical abstract: Melamine takes place of the TGA on the surface of TGA-CdTe QDs with negative charge to form melamine coated QDs changing the surface charge of the QDs, resulting the fluorescence quenched as the QDs aggregation occurred by electrostatic attraction of the two opposite charged nanocrystals. -- Highlights: •An ultrasensitive and selective method for the determination of melamine was developed at pH 11.0. •The selectivity of the method was improved. •The sensitivity of the method enhanced obviously as the CdTe QDs have higher QYs at pH 11. •The sensitivity and linear range for the analysis are size dependent using QDs PL probes. •Melamine takes the place of TGA resulting fluorescence quenched of QDs. -- Abstract: An ultrasensitive and simple method for the determination of melamine was developed based on the fluorescence quenching of thioglycolic acid (TGA) capped CdTe quantum dots (QDs) at pH 11.0. In strong alkaline aqueous solution, the selectivity of the method has been greatly improved due to most heavy metal ions show no interference as they are in the precipitation form or in their anion form. Furthermore, CdTe quantum dots have higher quantum yields at higher pH. The method has a wider concentration range and lower detection limit. The influence factors on the determination of melamine were investigated and the optimum conditions were determined. Under optimum conditions, the fluorescence intensity change of TGA coated CdTe quantum dots was linearly proportional to melamine over a concentration range from 1.0 × 10{sup −11} to 1.0 × 10{sup −5} mol L{sup −1} with a correlation coefficient of 0.9943 and a detection limit of 5 × 10{sup −12} mol L{sup −1}. The mechanism of fluorescence quenching of the QDs has been proposed based on the infrared spectroscopy information and electrophoresis experiments in presence of melamine under alkaline condition. The proposed method was employed to detect trace melamine in milk powder and pet feeds with satisfactory results.

  7. Studies of the grain boundary effect in electrodeposited cadmium telluride films from optical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, J.; Bhattacharyva, D.; Maiti, A.B.; Chaudhuri, S.; Pal, A.K. (Indian Association for the Cultivation of Science, Calcutta (India). Dept. of Materials Science)

    1995-01-01

    Polycrystalline CdTe films were deposited onto SnO[sub 2] coated glass substrates using electrodeposition with different deposition potentials, ranging from -670 to -725 mV, with respect to a saturated calomel electrode (SCE). The grain boundary potential (E[sub b]), the density of trap states at the intercrystalline boundary (Q[sub t]) and the carrier concentration (p) in the films were obtained. The surface roughness ([sigma][sub o]) of the films was determined by utilising reflectance measurements while the band gap ([approx] 1.49 eV) was determined from transmittance vs wavelength traces. The barrier height was found to increase from 0.23 eV to 0.25 eV with the variation of the deposition potential from -675 to -725 mV; while the corresponding variation in the density of trap states at the grain boundary region was 1.0 x 10[sup 12]-2.1x10[sup 12]. The carrier concentration was obtained from experimental values of the Debye length, determined from the optical transmittance measurements. (Author)

  8. Prognostic evaluation in obese patients using a dedicated multipinhole cadmium-zinc telluride SPECT camera.

    Science.gov (United States)

    De Lorenzo, Andrea; Peclat, Thais; Amaral, Ana Carolina; Lima, Ronaldo S L

    2016-02-01

    The purpose of this study is to evaluate the prognostic value of myocardial perfusion SPECT obtained in CZT cameras (CZT-SPECT) with multipinhole collimation in obese patients. CZT-SPECT may be technically challenging in the obese, and its prognostic value remains largely unknown. Patients underwent single-day, rest/stress (supine and prone) imaging. Images were visually inspected and graded as poor, fair or good/excellent. Summed stress and difference scores (SSS and SDS, respectively) were converted into percentages of total perfusion defect and of ischemic defect by division by the maximum possible score. Obesity was defined as a body mass index (BMI) ≥ 30 kg/m(2) and classified as class I (BMI 30-34.9 kg/m(2)), II (BMI 35-39.9 kg/m(2)), or III (BMI ≥ 40 kg/m(2)). Patients were followed-up by telephone interview for the occurrence of all-cause death, myocardial infarction or revascularization. A Cox proportional hazards analysis was used to assess the independent predictors of death. Among 1396 patients, 365 (26.1 %) were obese (mean BMI 33.9 ± 3.6; 17.5 % class I, 3.4 % class II, and 3.4 % class III). Image quality was good/excellent in 94.5 % of the obese patients. The annualized mortality rates were not significantly different among obese and non-obese patients, being obese and non-obese patients. Age, the use of pharmacologic stress and an abnormal CZT-SPECT, but not obesity, were independent predictors of death. In obese patients, single-day rest/stress CZT-SPECT with a multipinhole camera provides prognostic discrimination with high image quality.

  9. Nature of AX centers in antimony-doped cadmium telluride nanobelts.

    Science.gov (United States)

    Huang, Liubing; Lin, Chien-Chih; Riediger, Max; Röder, Robert; Tse, Pok Lam; Ronning, Carsten; Lu, Jia Grace

    2015-02-11

    Single crystalline p-type CdTe:Sb nanobelts were fabricated using an Au-catalyzed chemical vapor deposition method. Low carrier concentration and low mobility even at high Sb incorporation manifest compensation in the system. From cross examination of temperature-dependent charge transport and photoluminescence measurements, two major acceptor levels induced by Sb doping are determined: a shallow level attributed to substitutional Sb dopants without lattice relaxation and an associated deeper level resulted from large lattice relaxation-AX centers. Persistent photoconductivity and hysteresis photoconductance under the thermal cycle elucidate the nature of AX centers. This comprehensive investigation of the impurity levels in the material system is essential for the design and development of nanoelectronic devices based on the CdTe nanostructures.

  10. Mercury cadmium telluride focal plane array developments at Selex ES for astronomy and spectroscopy

    Science.gov (United States)

    Baker, Ian M.; Finger, Gert; Barnes, Keith

    2014-06-01

    This paper reports on the status of advanced infrared detectors exploiting Metal-Organic Vapour Phase Epitaxy (MOVPE) grown HgCdTe on GaAs at Selex ES. MOVPE has the maturity and flexibility to enable 3rd generation devices to be custom engineered to achieve small pixels, higher operating temperature, high sensitivity and tailored spectral response. The MOVPE technology has now been exploited in the latest development of avalanche photodiodes and single photon imaging is reported. In support of this the latest ROICs have been designed to be compatible with APD operation.

  11. Modeling effects of solute concentration in Bridgman growth of cadmium zinc telluride

    Science.gov (United States)

    Stelian, Carmen; Duffar, Thierry

    2016-07-01

    Numerical modeling is used to investigate the effect of solute concentration on the melt convection and interface shape in Bridgman growth of Cd1-x Znx Te (CZT). The numerical analysis is compared to experimental growth in cylindrical ampoules having a conical tip performed by Komar et al. (2001) [15]. In these experiments, the solidification process occurs at slow growth rate (V = 2 ṡ10-7 m / s) in a thermal field characterized by a vertical gradient GT = 20 K / cm at the growth interface. The computations performed by accounting the solutal effect show a progressive damping of the melt convection due to the depleted Zn at the growth interface. The computed shape of the crystallization front is in agreement with the experimental measurement showing a convex-concave shape for the growth through the conical part of the ampoule and a concave shape of the interface in the cylindrical region. The distribution of Zn is nearly uniform over the crystal length except for the end part of the ingots. The anomalous zinc segregation observed in some experiments is explained by introducing the hypothesis of incomplete charge mixing during the homogenization time which precedes the growth process. When the crystallization is started in ampoules having a very sharp conical tip, the heavy CdTe is accumulated at the bottom part of the melt, giving rise to anomalous segregation patterns, featuring very low zinc concentration in the ingots during the first stage of the solidification.

  12. Temperature-dependent adsorption of tellurium and mercury species on cadmium telluride studied by spectroscopic ellipsometry

    Science.gov (United States)

    Badano, Giacomo

    In this study, a subsonic molecular beam of Hg was directed on CdTe surfaces and the absorption spectra were measured for the first time by ellipsometry. We analyze the optical spectra of Hg adsorbed on CdTe surfaces, over the range 1.6--4.5 eV, for a variety of temperatures and Hg fluxes. When a CdTe(211)B surface is subjected to a Hg flux, various effects can occur. Hg will be present on and just beneath the surface in a variety of forms: chemisorbed on the Te sites or on excess Te (forming a 2D surface, 1D chains or isolated atoms or clusters), physisorbed as a 2D liquid, or diffused into the CdTe bulk. In our analysis of the change in the pseudo dielectric function, we made several approximations. We treated the different constituents as separate layers, which is strictly speaking not true, because the various Hg forms are probably mixed. Second, we used the 3D form of the Hg1- xCdxTe e(□; x) dielectric function to mimic chemisorbed Hg on the surface. Also, we used a Drude function to model the presence of physisorbed Hg, although that is probably a good approximation. Third, we fit only the imaginary part of the dielectric function, , because it has a more direct physical meaning, and unlike the real part does not depend on the presence of out-of-range critical points. In addition, the limited resolution of the M88 ellipsometer prevented us from using a critical point analysis to interpret the data. These limitations notwithstanding, our analysis gives surprisingly good results, in that it reproduces the expected dependence of the thickness of the chemisorbed and physisorbed components correctly as a function of temperature and pressure and gives reasonable values for the composition of the Hg1-xCd xTe. Although we do not at present believe the absolute numbers that the analysis provides, we believe that this approach confirms our general ideas regarding the nature of the CdTe(211) surface under Hg, and is valuable at least technologically, to obtain a reliable run-to-run characterization of the surface before growth.

  13. Characterization of metal contacts on and surfaces of cadmium zinc telluride

    CERN Document Server

    Bürger, A; Chattopadhyay, K; Shi, D; Morgan, S H; Collins, W E; James, R B

    1999-01-01

    In the past several years significant progress has been made in building a database of physical properties for detector quality Cd sub x Zn sub 1 sub - sub x Te (CZT) (x=0.1-0.2) crystal material. CZT's high efficiency combined with its room temperature operation make the material an excellent choice for imaging and spectroscopy in the 10-200 keV energy range. For detector grade material, superior crystallinity and high bulk resistivity are required. The surface preparation during the detector fabrication plays a vital role in determining the contact characteristics and the surface leakage current, which are often the dominant factors influencing its performance. This paper presents a surface and contact characterization study aimed at establishing the effects of the surface preparation steps prior to contacting (polishing and chemical etching), the choice of the metal and contact deposition technique, and the surface oxidation process. A photoconductivity mapping technique is used for studying the effects of...

  14. Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

    Science.gov (United States)

    Wang, Daozhi

    This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly with low Mn concentrations, to the sub-picosecond electromagnetic pulses has been demonstrated for the first time and studied in detail. The physical origin of the ultrafast responsivity is shown to be the electro-optic (Pockels) effect, simultaneously excluding the magneto-optical (Faraday) effect due to the Mn-ion spin dynamics. The discrepancy between the absence of the low-frequency Pockels effect and the ultrafast sampling results, suggests that in Cd(Mn)Te crystals at low frequencies, the electric field component of the external electromagnetic transients is screened by the free carriers (holes). At very high (THz) frequencies, tested by our sampling experiment, Mn spins are too slow to respond and we observe the very large Pockels effect in Cd(Mn)Te crystals.

  15. Minimizing Reflectivity by Etching Microstructures in Mercury Cadmium Telluride (HgCdTe)

    Science.gov (United States)

    2013-02-01

    readout integrated circuit (ROIC) (figure 1) using a p-n junction, which collects the photocharge into pixels using electric fields, and indium bump ...by ICP, a dry etch technique (figure 4). The samples were first mounted to a Si wafer with Apiezon N adhesive and loaded into the plasma etcher...flowing helium (He) gas on the backside of the handle wafer . The kinetic energy of the ionized gases bombards the sample and physically removes

  16. Solvothermal synthesis and study of nonlinear optical properties of nanocrystalline thallium doped bismuth telluride

    Energy Technology Data Exchange (ETDEWEB)

    Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India); Parola, Sowmendran; Avinash Chunduri, L.A.; Aditha, Saikiran; Sai Muthukumar, V; Mimani Rattan, Tanu; Kamisetti, Venkataramaniah [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

    2012-05-15

    Nanocrystalline Bismuth telluride and thallium (4 mol %) doped Bismuth telluride were synthesized through hydrothermal method. The as-prepared products were characterized using Powder X-ray Diffraction, High Resolution Transmission Electron Microscopy, Energy Dispersive X-Ray Spectroscopy, UV-Visible spectroscopy and Fourier Transform Infrared Spectroscopy. Powder XRD results revealed the crystalline nature of the obtained phases. HRTEM showed the particle-like morphology of the products. The decrease in the absorption coefficient due to thallium doping was observed in FTIR spectra. The intensity dependent nonlinear optical properties of nanocrystalline bismuth telluride and thallium doped bismuth telluride were studied using the Z-scan technique in open-aperture configuration. Bismuth telluride doped with thallium showed enhanced nonlinear optical response compared to pristine bismuth telluride and hence could be used as a potential candidate for optical power limiting applications. - Graphical Abstract: Nonlinear transmission (Z-scan) curves of nanocrystalline bismuth telluride ({Delta}) and thallium doped bismuth telluride ({open_square}). Thallium doped bismuth telluride showed enhanced nonlinear absorption compared to bismuth telluride. Inset: TEM micrograph of bismuth telluride nanocrystallites. Highlights: Black-Right-Pointing-Pointer Synthesis of Nanocrystalline Bi{sub 2}Te{sub 3} and Thallium doped Bi{sub 2}Te{sub 3} through solvothermal method. Black-Right-Pointing-Pointer Reduced absorption coefficient due to thallium doping found from IR spectroscopy. Black-Right-Pointing-Pointer Open-aperture Z-scan technique for nonlinear optical studies. Black-Right-Pointing-Pointer Two photon absorption based model for theoretical fitting of Z-scan data. Black-Right-Pointing-Pointer Enhanced nonlinear absorption in Thallium doped Bi{sub 2}Te{sub 3} - potential candidate for optical power limiting applications.

  17. Preparation and characterization of CdTeO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    El Azhari, M.Y.; Azizan, M.; Bennouna, A.; Outzourhit, A.; Ameziane, E.L. [Dept. de Phys. Marrakech (Morocco). Lab. de Physique des Solides et des Couches Minces; Brunel, M. [Laboratoire de Cristallographie, CNRS, 166X, 38042, Grenoble (France)

    2000-05-01

    Cadmium telluride oxide CdTeO{sub 3} thin films were prepared by r.f.-sputtering from a polycrystalline CdTe target in an atmosphere of nitrogen and oxygen. X-ray diffraction (XRD) analysis showed that the as-deposited samples were amorphous. X-ray photoelectron spectroscopy (XPS) measurements revealed that the films were nearly stoichiometric. The resistivity and the static dielectric constant of the as-deposited layers were found to be 3 x 10{sup 6} {omega}m and 16, respectively. Optical transmission measurements in the ultraviolet-visible-near-IR (UV-VIS-NIR) region allowed the determination of the optical constants of the prepared films. Post-deposition annealing of the layers at 420 C for 2 h favored their crystallization. Finally, we show that polycrystalline CdTO{sub 3} films can be grown on CdTe films, deposited on C7059 glass by an appropriate heat-treatment of the CdTeO{sub 3}/CdTe/C7059 structure. (orig.)

  18. Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt); Afify, N. [Physics Department, Assiut University, Assiut (Egypt); El-Taher, A. [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt)

    2009-08-12

    Different thickness of cadmium telluride (CdTe) thin films was deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The XRD experiments showed that the films are polycrystalline and have a zinc-blende (cubic) structure. The microstructure parameters, crystallite size and microstrain were calculated. It is observed that the crystallite size increases and microstrain decreases with the increase in the film thickness. The fundamental optical parameters like band gap and extinction coefficient are calculated in the strong absorption region of transmittance and reflectance spectrum. The possible optical transition in these films is found to be allowed direct transition with energy gap increase from 1.481 to 1.533 eV with the increase in the film thickness. It was found that the optical band gap increases with the increase in thickness. The refractive indices have been evaluated in transparent region in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index can be extrapolated by Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that the refractive index, n increases on increasing the film thickness up to 671 nm and then the variation of n with higher thickness lie within the experimental errors.

  19. Damage in Monolithic Thin-Film Photovoltaic Modules Due to Partial Shade

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Mansfield, Lorelle; Repins, Ingrid; Kurtz, Sarah

    2016-09-01

    The typical configuration of monolithic thin-film photovoltaic modules makes it possible for partial shade to place one or more cells in such a module in reverse bias. Reverse bias operation leads to high voltage, current density, and power density conditions, which can act as driving forces for failure. We showed that a brief outdoor shadow event can cause a 7% permanent loss in power. We applied an indoor partial shade durability test that moves beyond the standard hot spot endurance test by using more realistic mask and bias conditions and by carefully quantifying the permanent change in performance due to the stress. With the addition of a pass criterion based on change in maximum power, this procedure will soon be proposed as a part of the module-type qualification test. All six commercial copper indium gallium diselenide and cadmium telluride modules we tested experienced permanent damage due to the indoor partial shade test, ranging from 4% to 14% loss in maximum power. We conclude by summarizing ways to mitigate partial shade stress at the cell, module, and system levels.

  20. Assessing cadmium and vanadium accumulation using diffusive gradient in thin-films (DGT) and phytoplankton in the Churchill River estuary, Manitoba.

    Science.gov (United States)

    Mangal, V; Zhu, Y; Shi, Y X; Guéguen, C

    2016-11-01

    Diffusive gradient in thin films (DGT) and phytoplankton communities were evaluated for the measurement of Cd and V at environmentally relevant concentrations in laboratory settings and in the Churchill River estuary (Manitoba, Canada) during an annual spring melt. Despite rapid changes in hydrology and water quality, DGT samplers and intracellular Cd and V concentrations were positively correlated (0.79  0.99). Principal component analysis (PCA) reinforced similarities between both metal monitoring techniques and assessed how changing environmental variables during the river discharge period influenced each monitoring technique. Cd accumulation was influenced by DOC concentrations and protein-like DOM whereas ionic strength (i.e. conductivity) and humic-like DOM influenced V accumulation. The present findings suggest that (1) DGT is a versatile tool for monitoring bioaccumulation of Cd and V in highly dynamic environmental systems and (2) DOC concentration, DOM composition, conductivity, pH, and river discharge influence the bioavailability of Cd and V in estuarine and riverine waters.

  1. Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

    Science.gov (United States)

    Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Park, Yeonjoon (Inventor); Lee, Kunik (Inventor)

    2014-01-01

    Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

  2. Growth and characterization of bismuth telluride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  3. Cadmium and zinc relationships

    Energy Technology Data Exchange (ETDEWEB)

    Elinder, C.; Piscator, M.

    1978-08-01

    Higher mammals, such as homo sapiens, accumulate zinc in kidney cortex almost equimolarly with cadmium. A different pattern seems to be present in liverthere is a limited increase of zinc in two species of large farm animals compared with a marked increase in the laboratory. In large farm animals, an equimolar increase of zinc with cadmium in renal cortex seems to indicate that the form of metallothionein that binds equal amounts of cadmium and zinc in present. Differences in cadmium and zinc relationships in large animals and humans compared with laboratory animals must be carefully considered. (4 graphs, 26 references)

  4. Preparation and characterization of ZnTe thin films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Kale, S.S. [Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Seoul 133-791 (Korea, Republic of); Mane, R.S. [Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Seoul 133-791 (Korea, Republic of); Pathan, H.M. [Eco-Nano Research Centre, Korea Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul 130-650 (Korea, Republic of); Shaikh, A.V. [AKI' s Poona College of Arts, Science and Commerce, Pune (India); Joo, Oh-Shim [Eco-Nano Research Centre, Korea Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul 130-650 (Korea, Republic of); Han, Sung-Hwan [Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2007-02-28

    Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47.

  5. Preparation and characterization of ZnTe thin films by SILAR method

    Science.gov (United States)

    Kale, S. S.; Mane, R. S.; Pathan, H. M.; Shaikh, A. V.; Joo, Oh-Shim; Han, Sung-Hwan

    2007-02-01

    Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47.

  6. Origin of anomalous anharmonic lattice dynamics of lead telluride

    CERN Document Server

    Shiga, Takuma; Hori, Takuma; Delaire, Olivier; Shiomi, Junichiro

    2015-01-01

    The origin of the anomalous anharmonic lattice dynamics of lead telluride is investigated using molecular dynamics simulations with interatomic force constants (IFCs) up to quartic terms obtained from first principles. The calculations reproduce the peak asymmetry of the radial distribution functions and the double peaks of transverse optical phonon previously observed with neutron diffraction and scattering experiments. They are identified to be due to the extremely large nearest-neighbor cubic IFCs in the [100] direction. The outstanding strength of the nearest-neighbor cubic IFCs relative to the longer-range ones explains the reason why the distortion in the radial distribution function is local.

  7. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Science.gov (United States)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O2 pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm2. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O2 flow. Through this method, the compact and uniform CdTe film (30 × 40 cm2) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm2) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (Jsc) of the cell is 26.9 mA/cm2, open circuit voltage (Voc) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  8. Kelvin probe studies of cesium telluride photocathode for AWA photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Wisniewski, Eric E., E-mail: ewisniew@anl.gov [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Velazquez, Daniel [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Yusof, Zikri, E-mail: zyusof@hawk.iit.edu [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Spentzouris, Linda; Terry, Jeff [Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Sarkar, Tapash J. [Rice University, 6100 Main, Houston, TX 77005 (United States); Harkay, Katherine [Accelerator Science Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States)

    2013-05-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (≈50nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating. -- Highlights: ► The correlation between Quantum Efficiency (QE) and work function. ► How QE and work function evolve together. ► Rejuvenation of the photocathode via heating and the effect on work function. ► The effects on the work function due to exposure to UV light.

  9. Zinc and cadmium monosalicylates

    Energy Technology Data Exchange (ETDEWEB)

    Kharitonov, Yu.Ya.; Tujebakhova, Z.K. (Moskovskij Khimiko-Tekhnologicheskij Inst. (USSR))

    1984-06-01

    Zinc and cadmium monosalicylates of the composition MSal, where M-Zn or Cd, Sal - twice deprotonated residue of salicylic acid O-HOC/sub 6/H/sub 4/COOH (H/sub 2/Sal), are singled out and characterized. When studying thermograms, thermogravigrams, IR absorption spectra, roentgenograms of cadmium salicylate compounds (Cd(OC/sub 6/H/sub 4/COO) and products of their thermal transformations, the processes of thermal decomposition of the compounds have been characterized. The process of cadmium monosalicylate decomposition takes place in one stage. Complete loss of salicylate acido group occurs in the range of 320-460 deg. At this decomposition stage cadmium oxide is formed. A supposition is made that cadmium complex has tetrahedral configuration, at that, each salicylate group plays the role of tetradentate-bridge ligand. The compound evidently has a polymer structure.

  10. Comparative study of electrical properties of Cd and Te-enriched CdTe thin films at cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Nazar Abbas, E-mail: nabbasqureshi@yahoo.co [Thin Films Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Park Road, Islamabad 45320 (Pakistan)

    2010-09-17

    Cd and Te-enriched cadmium telluride (CdTe) polycrystalline thin films were grown on corning glass substrates by Close Spaced Sublimation (CSS) technique. The structural investigations performed by means of X-ray diffraction (XRD) technique, scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX) showed that the deposited films exhibit a polycrystalline structure with <1 1 1> as preferred orientation. The optical transmittance for Te-enriched CdTe sample was above 0.8 in the range of 1500-2500 nm, which was significantly below 0.8 for Cd-enriched CdTe sample. The electrical properties of these samples were analyzed as a function of the Cd and Te concentration at cryogenic temperature. The electrical resistivity dropped several orders of magnitude. These properties are significantly changed at cryogenic temperature. The comparative study revealed that using this deposition technique, n-type, and p-type Cd and Te-enriched CdTe polycrystalline films can be produced.

  11. Accessing the quantum palette: quantum-dot spectral conversion towards the BIPV application of thin-film micro-modules

    Science.gov (United States)

    Hodgson, S. D.; Kartopu, G.; Rugen-Hankey, S. L.; Clayton, A. J.; Barrioz, V.; Irvine, S. J. C.

    2015-10-01

    To demonstrate the potential for building integrated photovoltaics (BIPV) incorporation of thin-film photovoltaics, commercially available quantum dots (QDs) have been deposited, as part of a poly(methyl methacrylate) (PMMA) composite film, on a cadmium telluride (CdTe) micro-module. This resulted in an increase in photocurrent generation through the luminescent down-shifting (LDS) process. The optical properties of these films were characterized through UV-vis spectroscopy. The impact of the film on the micro-module was studied through current-voltage (I-V) and external quantum efficiency measurements. Further layers were added to the initial single-layer LDS film, however no additional improvement to the micro-module were observed. Additionally, a range of emission wavelengths have been explored. The majority of these films, when tested on a CdTe device, were shown to improve the photocurrent generation whilst also visually displaying the vivid colour palette provided by quantum confined materials. The future feasibility of using QD based LDS films for large scale BIPV-based power generation has also been discussed.

  12. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  13. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Airul Azha Abd [Universiti Kebangsaan Malaysia UKM, Institute of Microengineering and Nanoelectronics, Bangi, Selangor (Malaysia); Technology Park Malaysia, Malaysia Institute of Microelectronics and System, Kuala Lumpur (Malaysia); Umar, Akrajas Ali; Salleh, Muhamad Mat [Universiti Kebangsaan Malaysia UKM, Institute of Microengineering and Nanoelectronics, Bangi, Selangor (Malaysia); Chen, Xiaomei [Jimei University, College of Food and Biological Engineering, Jimei, Xiamen (China); Oyama, Munetaka [Kyoto University, Graduate School of Engineering, Nishikyoku, Kyoto (Japan)

    2016-02-15

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m{sup -1} K{sup -2}) and 10 μV/K (and 19.5 μW m{sup -1} K{sup -2}), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output

  14. Effect of metallic coatings on thermoelectric properties of lead telluride films

    Energy Technology Data Exchange (ETDEWEB)

    Ukhlinov, G.A.; Lakhno, I.G. (Moskovskij Inst. Ehlektronnoj Tekhniki (USSR))

    1984-05-01

    Effect of sprayed coatings of different metals on thermoelectric properties of lead telluride films was investigated. The basic films were prepared by the method of vacuum thermal evaporation of sample of stoichiometric lead telluride at 5x10/sup -4/ Pa residual pressure on mica (muscovite) sublayer at 330-350 deg C and approximately 10 nm/s deposition rate. It was established that fine coatings of copper, silver and gold modify sufficiently electric properties of lead telluride films. The effect is conditioned mainly by decoration and electric shunting of grain boundaries by metal island, which removes the contribution of grain boundaries to film electric conductivity.

  15. Synthesis of 1,3-diynes via detelluration of bis(ethynyl)tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Stefani, Helio A.; PenaI, Jesus M. [Universidade de Sao Paulo (FCF/USP), SP (Brazil). Fac. de Ciencias Farmaceuticas; Zukerman-Schpector, Julio [Universidade Federal de Sao Carlos (DQ/UFSCar), SP (Brazil). Dept. de Quimica; Tiekink, Edward R.T. [University of Malaya, Kuala Lumpur (Malaysia). Dept. of Chemistry

    2011-07-01

    The synthesis of symmetric conjugated diyne systems with electron-withdrawing or electron-donating substituents via a palladium-catalyzed detelluration of bis(arylethynyl)tellurides and bis(alkylethynyl)tellurides is described. This procedure is effected under atmospheric conditions in DMF using Pd(OAc)2 as a catalyst and AgOAc as an additive in the presence of triethylamine. This route offers efficient access to conjugated diyne systems in short reaction time. X-ray crystallographic structure and solid-state conformation of bis(p-tolylethynyl)telluride show a supramolecular chain aligned along the b axis, sustained by C-H...p interactions. (author)

  16. Suzuki-Miyaura cross-coupling reactions of aryl tellurides with potassium aryltrifluoroborate salts.

    Science.gov (United States)

    Cella, Rodrigo; Cunha, Rodrigo L O R; Reis, Ana E S; Pimenta, Daniel C; Klitzke, Clécio F; Stefani, Hélio A

    2006-01-06

    [reaction: see text] Palladium(0)-catalyzed cross-coupling between potassium aryltrifluoroborate salts and aryl tellurides proceeds readily to afford the desired biaryls in good to excellent yield. The reaction seems to be unaffected by the presence of electron-withdrawing or electron-donating substituents in both the potassium aryltrifluoroborate salts and aryl tellurides partners. Biaryls containing a variety of functional groups can be prepared. A chemoselectivity study was also carried out using aryl tellurides bearing halogen atoms in the same compound. In addition, this new version of the Suzuki-Miyaura cross-coupling reaction was monitored by electrospray ionization mass spectrometry where some reaction intermediates were detected and analyzed.

  17. CdTe Photovoltaic Devices for Solar Cell Applications

    Science.gov (United States)

    2011-12-01

    July 28, 2011 14. ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film solar cells because of...mail.mil Phone: 301 394 0963 ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film ...absorption coefficient allows films as thin as 2 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 17% have been

  18. Process dependent thermoelectric properties of EDTA assisted bismuth telluride

    Science.gov (United States)

    Kulsi, Chiranjit; Kargupta, Kajari; Banerjee, Dipali

    2016-04-01

    Comparison between the structure and thermoelectric properties of EDTA (Ethylene-diamine-tetra-acetic acid) assisted bismuth telluride prepared by electrochemical deposition and hydrothermal route is reported in the present work. The prepared samples have been structurally characterized by high resolution X-ray diffraction spectra (HRXRD), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopic images (HRTEM). Crystallite size and strain have been determined from Williamson-Hall plot of XRD which is in conformity with TEM images. Measurement of transport properties show sample in the pellet form (S1) prepared via hydrothermal route has higher value of thermoelectric power (S) than the electrodeposited film (S2). But due to a substantial increase in the electrical conductivity (σ) of the film (S2) over the pellet (S1), the power factor and the figure of merit is higher for sample S2 than the sample S1 at room temperature.

  19. Growth of lead-tin telluride crystals under high gravity

    Science.gov (United States)

    Regel, L. L.; Turchaninov, A. M.; Shumaev, O. V.; Bandeira, I. N.; An, C. Y.; Rappl, P. H. O.

    1992-04-01

    The influence of high gravity environment on several growth habits of lead-tin telluride crystals began to be investigated. Preliminary experiments with Pb 0.8Sn 0.2te grown by the Bridgman technique had been made at the centrifuge facilities of the Y.A. Gagarin Cosmonauts Center in the USSR, using accelerations of 5 g, 5.2 g and 8 g. The Sn distribution for these crystals was compared with that obtained for growth at normal gravity and the results show the existence of significant compositional inhomogeneities along the axial direction. Convection currents at high gravity seem to help multiple nucleation and subsequent random orientation of growth. Analyses of carrier concentrations as well as morphological characteristics were also made.

  20. Shock-Wave Consolidation of Nanostructured Bismuth Telluride Powders

    Science.gov (United States)

    Beck, Jan; Alvarado, Manuel; Nemir, David; Nowell, Mathew; Murr, Lawrence; Prasad, Narasimha

    2012-06-01

    Nanostructured thermoelectric powders can be produced using a variety of techniques. However, it is very challenging to build a bulk material from these nanopowders without losing the nanostructure. In the present work, nanostructured powders of the bismuth telluride alloy system are obtained in kilogram quantities via a gas atomization process. These powders are characterized using a variety of methods including scanning electron microscopy, transition electron microscopy, and x-ray diffraction analysis. Then the powders are consolidated into a dense bulk material using a shock-wave consolidation technique whereby a nanopowder-containing tube is surrounded by explosives and then detonated. The resulting shock wave causes rapid fusing of the powders without the melt and subsequent grain growth of other techniques. We describe the test setup and consolidation results.

  1. Electrochemical Studies of Lead Telluride Behavior in Acidic Nitrate Solutions

    Directory of Open Access Journals (Sweden)

    Rudnik E.

    2015-04-01

    Full Text Available Electrochemistry of lead telluride stationary electrode was studied in nitric acid solutions of pH 1.5-3.0. E-pH diagram for Pb-Te-H2O system was calculated. Results of cyclic voltammetry of Pb, Te and PbTe were discussed in correlation with thermodynamic predictions. Anodic dissolution of PbTe electrode at potential approx. -100÷50 mV (SCE resulted in tellurium formation, while above 300 mV TeO2 was mainly produced. The latter could dissolve to HTeO+2 under acidic electrolyte, but it was inhibited by increased pH of the bath.

  2. Pbsub(1-x)Snsub(x)Te (x=0,00 and 0,20) alloying with gallium and cadmium

    Energy Technology Data Exchange (ETDEWEB)

    Novoselova, A.V.; Zlomanov, V.P.; Gas' kov, A.M.; Ryabova, L.I.; Lazarenko, M.A.; Lisina, N.G.

    Investigation results of doping conditions of PbTe and Pbsub(O.8)Snsub(0.2)Te crystals with gallium and cadmium both in the process of growing and diffusional annealing in component vapours are presented. The concentration of the introduced addition in alloyed samples is determined by chemical analysis; homogeneity of its distribution in crystal volume is studied using the Auger-electron microanalysis. Kinetics of gallium solid solution decomposition in lead telluride is investigated. Galvanomagentic and photoelectric properties of the doped crystals are studied in the temperature range of 4-300 K.

  3. Cadmium status in Egypt

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    It is inferred from these studies that releases of Cd are still increasing and it is recommended that measures must be taken to reduce emissions of cadmium. Any cadmium discharged into the Egyptian environment may move from one compartment to another at varying rates,resulting in an accumulation in compartments such as soils and biota. Such accumulation can be expected to increase with continued emissions,and attention should be given to all sources of cadmium, natural as well as anthropogenic especially in the industrial cities in Egypt. Cadmium present in sewage, as well as industrial effluent (also, other liquid and solid wastes) and sewage sludge will increase levels in soils and is xpected to contribute to dietary levels and body burdens. The current information indicates that such effects may have to be evaluated over long periods of time, possibly as long as 50 - 100 years.

  4. Rhizopus stolonifer mediated biosynthesis of biocompatible cadmium chalcogenide quantum dots.

    Science.gov (United States)

    Mareeswari, P; Brijitta, J; Harikrishna Etti, S; Meganathan, C; Kaliaraj, Gobi Saravanan

    2016-12-01

    We report an efficient method to biosynthesize biocompatible cadmium telluride and cadmium sulphide quantum dots from the fungus Rhizopus stolonifer. The suspension of the quantum dots exhibited purple and greenish-blue luminescence respectively upon UV light illumination. Photoluminescence spectroscopy, X-ray diffraction, and transmission electron microscopy confirms the formation of the quantum dots. From the photoluminescence spectrum the emission maxima is found to be 424 and 476nm respectively. The X-ray diffraction of the quantum dots matches with results reported in literature. The 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay for cell viability evaluation carried out on 3-days transfer, inoculum 3×10(5) cells, embryonic fibroblast cells lines shows that more than 80% of the cells are viable even after 48h, indicating the biocompatible nature of the quantum dots. A good contrast in imaging has been obtained upon incorporating the quantum dots in human breast adenocarcinoma Michigan Cancer Foundation-7 cell lines.

  5. Plausible Mechanisms of Cadmium Carcinogenesis

    Science.gov (United States)

    Cadmium is a transition metal and an ubiquitous environmental and industrial pollutant. Laboratory animal studies and epidemiological studies have shown that exposure to cadmium is associated with various organ toxicities and carcinogenic effects. Several national and internation...

  6. Novel doxorubicin loaded PEGylated cuprous telluride nanocrystals for combined photothermal-chemo cancer treatment.

    Science.gov (United States)

    Wang, Xianwen; Ma, Yan; Chen, Huajian; Wu, Xiaoyi; Qian, Haisheng; Yang, Xianzhu; Zha, Zhengbao

    2017-02-06

    Recently, combined photothermal-chemo therapy has attracted great attention due to its enhanced anti-tumor efficiency via synergistic effects. Herein, PEGylated cuprous telluride nanocrystals (PEGylated Cu2Te NCs) were developed as novel drug nanocarriers for combined photothermal-chemo treatment of cancer cells. PEGylated Cu2Te NCs were fabricated through a simple two-step process, comprised of hot injection and thin-film hydration. The as-prepared PEGylated Cu2Te NCs (average diameter of 5.21±1.05nm) showed a noticeable photothermal conversion efficiency of 33.1% and good capacity to load hydrophobic anti-cancer drug. Due to the protonated amine group at low pH, the doxorubicin (DOX)-loaded PEGylated Cu2Te NCs (PEGylated Cu2Te-DOX NCs) exhibited an acidic pH promoted drug release profile. Moreover, a three-parameter model, which considers the effects of drug-carrier interactions on the initial burst release and the sustained release of drug from micro- and nano-sized carriers, was used to gain insight into how pH and laser irradiation affect drug release from PEGylated Cu2Te-DOX NCs. Based on the results from in vitro cell study, PEGylated Cu2Te-DOX NCs revealed remarkably photothermal-chemo synergistic effect to HeLa cells, attributed to both the PEGylated Cu2Te NCs mediated photothermal ablation and enhanced cellular uptake of the drug. Thus, our results encourage the usage of Cu2Te-DOX drug nanocarriers for enhanced treatment of cancer cells by combined photothermal-chemo therapy.

  7. Environmental assessment of advanced thin film manufacturing process. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Cunningham, D.W.; Mopas, E.; Skinner, D. [BP Solar, Inc., Fairfield, CA (United States); McGuire, L.; Strehlow, M. [Radian International, Walnut Creek, CA (United States)

    1998-09-01

    This report describes work performed by BP Solar, Inc., to provide an extensive preproduction analysis of waste-stream abatement at its plant in Fairfield, California. During the study, numerous technologies were thoroughly evaluated, which allowed BP Solar to select systems that outperformed the stringent federal and state regulations. The main issues were originally perceived to be controlling cadmium compound releases to both air and wastewater to acceptable levels and adopting technologies for air and water waste streams in an efficient, cost-effective manner. BP Solar proposed high-efficiency, reliable control equipment that would reduce air-contaminant emission levels below levels of concern. Cadmium telluride dust is successfully controlled with high-efficiency (>99.9%) bag-in/bag-out filters. For air abatement, carbon canisters provide efficient VOC reduction, and wastewater pretreatment is required per federal pretreatment standards. BP Solar installed a cadmium-scavenging ion exchange system and electrowinning system capable of removing cadmium to <10 ppb (local publicly-owned-treatment-works limits for cadmium is 30 ppb). BP Solar plans to maximize potential reuse of rinse waters by phasing in additional wastewater treatment technologies. Finally, the work to date has identified the areas that need to be revisited as production scales up to ensure that all health, safety, and environmental goals are met.

  8. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    CERN Document Server

    Ede, A

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with ...

  9. Thin-film semiconductor rectifier has improved properties

    Science.gov (United States)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  10. Effect of the cadmium chloride treatment on RF sputtered Cd{sub 0.6}Zn{sub 0.4}Te films for application in multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shimpi, Tushar M., E-mail: mechanical.tushar@gmail.com; Kephart, Jason M.; Swanson, Drew E.; Munshi, Amit H.; Sampath, Walajabad S. [Department of Mechanical Engineering, Colorado State University, 1320 Campus Delivery, Fort Collins, Colorado 80523 (United States); Abbas, A.; Walls, John M. [CREST (Centre for Renewable Energy Systems and Technology), Loughborough University, Loughborough LE11 3TU (United Kingdom)

    2016-09-15

    Single phase Cd{sub 0.6}Zn{sub 0.4}Te (CdZnTe) films of 1 μm thickness were deposited by radio frequency planar magnetron sputter deposition on commercial soda lime glass samples coated with fluorine-doped tin oxide and cadmium sulphide (CdS). The stack was then treated with cadmium chloride (CdCl{sub 2}) at different temperatures using a constant treatment time. The effect of the CdCl{sub 2} treatment was studied using optical, materials, and electrical characterization of the samples and compared with the as-deposited CdZnTe film with the same stack configuration. The band gap deduced from Tauc plots on the as-deposited CdZnTe thin film was 1.72 eV. The deposited film had good crystalline quality with a preferred orientation along the {111} plane. After the CdCl{sub 2} treatment, the absorption edge shifted toward longer wavelength region and new peaks corresponding to cadmium telluride (CdTe) emerged in the x-ray diffraction pattern. This suggested loss of zinc after the CdCl{sub 2} treatment. The cross sectional transmission electron microscope images of the sample treated at 400 °C and the energy dispersive elemental maps revealed the absence of chlorine along the grain boundaries of CdZnTe and residual CdTe. The presence of chlorine in the CdTe devices plays a vital role in drastically improving the device performance which was not observed in CdZnTe samples treated with CdCl{sub 2}. The loss of zinc from the surface and incomplete recrystallization of the grains together with the presence of high densities of stacking faults were observed. The surface images using scanning electron microscopy showed that the morphology of the grains changed from small spherical shape to large grains formed due to the fusion of small grains with distinct grain boundaries visible at the higher CdCl{sub 2} treatment temperatures. The absence of chlorine along the grain boundaries, incomplete recrystallization and distinct grain boundaries is understood to cause the poor

  11. Mechanical properties of thermoelectric lanthanum telluride from quantum mechanics

    Science.gov (United States)

    Li, Guodong; Aydemir, Umut; Wood, Max; Goddard, William A., III; Zhai, Pengcheng; Zhang, Qingjie; Snyder, G. Jeffrey

    2017-07-01

    Lanthanum telluride (La3Te4) is an n-type high-performance thermoelectric material in the high temperature range, but its mechanical properties remain unknown. Since we want robust mechanical properties for their integration into industrial applications, we report here quantum mechanics (QM) simulations to determine the ideal strength and deformation mechanisms of La3Te4 under pure shear deformations. Among all plausible shear deformation paths, we find that shearing along the (0 0 1)/ slip system has the lowest ideal shear strength of 0.99 GPa, making it the most likely slip system to be activated under pressure. We find that the long range La-Te ionic interactions play the predominant role in resisting shear deformation. To enhance the mechanical strength, we suggest improving the long ionic La-Te bond stiffness to strengthen the ionic La-Te framework in La3Te4 by a defect-engineering strategy, such as partial substitution of La by Ce or Pr having isotypic crystal structures. This work provides the fundamental information to understand the intrinsic mechanics of La3Te4.

  12. Frustrated square lattice Heisenberg model and magnetism in Iron Telluride

    Science.gov (United States)

    Zaliznyak, Igor; Xu, Zhijun; Gu, Genda; Tranquada, John; Stone, Matthew

    2011-03-01

    We have measured spin excitations in iron telluride Fe1.1Te, the parent material of (1,1) family of iron-based superconductors. It has been recognized that J1-J2-J3 frustrated Heisenberg model on a square lattice might be relevant for the unusual magnetism and, perhaps, the superconductivity in cuprates [1,2]. Recent neutron scattering measurements show that similar frustrated model might also provide reasonable account for magnetic excitations in iron pnictide materials. We find that it also describes general features of spin excitations in FeTe parent compound observed in our recent neutron measurements, as well as in those by other groups. Results imply proximity of magnetic system to the limit of extreme frustration. Selection of spin ground state under such conditions could be driven by weak extrinsic interactions, such as lattice distortion, or strain. Consequently, different nonuniversal types of magnetic order could arise, both commensurate and incommensurate. These are not necessarily intrinsic to an ideal J1-J2-J3 model, but might result from lifting of its near degeneracy by weak extrinsic perturbations.

  13. Inverting polar domains via electrical pulsing in metallic germanium telluride

    Science.gov (United States)

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-04-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage.

  14. Process dependent thermoelectric properties of EDTA assisted bismuth telluride

    Energy Technology Data Exchange (ETDEWEB)

    Kulsi, Chiranjit; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah-711103, West Bengal (India); Kargupta, Kajari [Chemical Engineering Department, Jadavpur University, Kolkata-700032, West Bengal (India)

    2016-04-13

    Comparison between the structure and thermoelectric properties of EDTA (Ethylene-diamine-tetra-acetic acid) assisted bismuth telluride prepared by electrochemical deposition and hydrothermal route is reported in the present work. The prepared samples have been structurally characterized by high resolution X-ray diffraction spectra (HRXRD), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopic images (HRTEM). Crystallite size and strain have been determined from Williamson-Hall plot of XRD which is in conformity with TEM images. Measurement of transport properties show sample in the pellet form (S{sub 1}) prepared via hydrothermal route has higher value of thermoelectric power (S) than the electrodeposited film (S{sub 2}). But due to a substantial increase in the electrical conductivity (σ) of the film (S{sub 2}) over the pellet (S{sub 1}), the power factor and the figure of merit is higher for sample S{sub 2} than the sample S{sub 1} at room temperature.

  15. Inverting polar domains via electrical pulsing in metallic germanium telluride

    Science.gov (United States)

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-01-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

  16. 29 CFR 1910.1027 - Cadmium.

    Science.gov (United States)

    2010-07-01

    ... battery Plate making, plate preparation 50 All other processes 15 Zinc/Cadmium refining* Cadmium refining... as an airborne concentration of cadmium of 2.5 micrograms per cubic meter of air (2.5 µg/m3... air cadmium level to which an employee is exposed means the exposure to airborne cadmium that...

  17. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  18. Novel infrared spectroscopic techniques for the study of adsorbed proteins on photoactive thin films

    Science.gov (United States)

    Angle, Taylor Allan

    Through the development of attenuated total reflection (ATR) Fourier transform infrared (FTIR) spectroscopic techniques, as well as biocompatible nanoporous gold film confining layers and photoactive nanocrystal cadmium telluride (CdTe) thin films, a system capable of in situ study of adsorbed protein films on photoactive layers was created. Due to the oxygen intolerance of the enzyme of interest for this work (a [FeFe]-hydrogenase from Clostridium acetobutylicum), techniques were developed in a manner conducive to anaerobic environments. Solid-state ligand exchange processes were shown to have no detrimental effect on the continued ability of nanocrystal CdTe layers to reduce species via the transfer of photogenerated electrons. Nanoporous gold films were shown to effectively confine poorly bound surface species including nanocrystal CdTe layers and adsorbed protein films. An ATR "stack'' structure, consisting of a silicon wafer coupled to a zinc selenide ATR crystal by a high index optical coupling fluid, was designed and implemented, leading to a tunable optical structure for use with existing ATR setups. This ATR stack was shown to maintain resolution and signal intensity of traditional ATR configurations for both aqueous and solid-state samples. Through the use of coupled silicon wafers, we significantly increased both sample throughput and the number of available chemical processes by replacing the expensive ATR crystals as the default sample substrate. Shown herein to function as initially intended, these novel methods provide the groundwork for more complex experiments, such as an in situ monitoring of the photooxidation of surface-bound hydrogenases.

  19. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    Science.gov (United States)

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  20. Optimization of High-Efficiency CdS/CdTe Thin Film Solar Cell Using Step Doping Grading and Thickness of the Absorption Layer

    OpenAIRE

    Masoud Sabaghi; Abbas Majdabadi; Saeid Marjani; Saeed Khosroabadi

    2015-01-01

    In this paper, the influence of stepped doping of the absorber layer on performance of Cadmium Sulfide/Cadmium Telluride (CdS/CdTe) solar cell has been investigated. At first, the electrical characteristics of conventional CdS/CdTe solar cell is validated with fabricated CdS/CdTe solar cell. To improve the maximum efficiency of CdS/CdTe solar cell, the doping and thickness of the absorption layer are optimized. By step doping concentration within the absorber layer using buffer layer back con...

  1. Speciation of Dissolved Cadmium

    DEFF Research Database (Denmark)

    Holm, Peter Engelund; Andersen, Sjur; Christensen, Thomas Højlund

    1995-01-01

    Equilibrium dialysis and ion exchange methods, as well as computer calculations (GEOCHEM), were applied for speciation of dissolved cadmium (Cd) in test solutions and leachate samples. The leachate samples originated from soil, compost, landfill waste and industrial waste. The ion exchange (IE...

  2. Cadmium - is it hazardous

    Energy Technology Data Exchange (ETDEWEB)

    Zartner-Nyilas, G.; Valentin, H.; Schaller, K.H.; Schiele, R.

    1983-01-01

    The report summarizes the state of knowledge and experience on cadmium. Biological, toxicological and epidemiological data have been evaluated. Cd pollution of the environment is reviewed under the aspect of human health. Uptake in food, threshod values of Cd exposure of the population, types and extent of health hazards, possible carcinogenic effects and future fields of research are discussed.

  3. Near Infrared Quantum Cutting Luminescence of Er(3+)/Tm(3+) Ion Pairs in a Telluride Glass.

    Science.gov (United States)

    Chen, Xiaobo; Li, Song; Hu, Lili; Wang, Kezhi; Zhao, Guoying; He, Lizhu; Liu, Jinying; Yu, Chunlei; Tao, Jingfu; Lin, Wei; Yang, Guojian; Salamo, Gregory J

    2017-05-16

    The multiphoton near-infrared, quantum cutting luminescence in Er(3+)/Tm(3+) co-doped telluride glass was studied. We found that the near-infrared 1800-nm luminescence intensity of (A) Er(3+)(8%)Tm(3+)(0.5%):telluride glass was approximately 4.4 to 19.5 times larger than that of (B) Tm(3+)(0.5%):telluride glass, and approximately 5.0 times larger than that of (C) Er(3+)(0.5%):telluride glass. Additionally, the infrared excitation spectra of the 1800 nm luminescence, as well as the visible excitation spectra of the 522 nm and 652 nm luminescence, of (A) Er(3+)(8%)Tm(3+)(0.5%):telluride glass are very similar to those of Er(3+) ions in (C) Er(3+)(0.5%):telluride glass, with respect to the shapes of their excitation spectral waveforms and peak wavelengths. Moreover, we found that there is a strong spectral overlap and energy transfer between the infrared luminescence of Er(3+) donor ions and the infrared absorption of Tm(3+) acceptor ions. The efficiency of this energy transfer {(4)I13/2(Er(3+)) → (4)I15/2(Er(3+)), (3)H6(Tm(3+)) → (3)F4(Tm(3+))} between the Er(3+) and Tm(3+) ions is approximately 69.8%. Therefore, we can conclude that the observed behaviour is an interesting multiphoton, near-infrared, quantum cutting luminescence phenomenon that occurs in novel Er(3+)-Tm(3+) ion pairs. These findings are significant for the development of next-generation environmentally friendly germanium solar cells, and near-to-mid infrared (1.8-2.0 μm) lasers pumped by GaN light emitting diodes.

  4. Cadmium and cancer.

    Science.gov (United States)

    Hartwig, Andrea

    2013-01-01

    Cadmium is an established human and animal carcinogen. Most evidence is available for elevated risk for lung cancer after occupational exposure; however, associations between cadmium exposure and tumors at other locations including kidney, breast, and prostate may be relevant as well. Furthermore, enhanced cancer risk may not be restricted to comparatively high occupational exposure, but may also occur via environmental exposure, for example in areas in close proximity to zinc smelters. The underlying mechanisms are still a matter of manifold research activities. While direct interactions with DNA appear to be of minor importance, elevated levels of reactive oxygen species (ROS) have been detected in diverse experimental systems, presumably due to an inactivation of detoxifying enzymes. Also, the interference with proteins involved in the cellular response to DNA damage, the deregulation of cell growth as well as resistance to apoptosis appears to be involved in cadmium-induced carcinogenicity. Within this context, cadmium has been shown to disturb nucleotide excision repair, base excision repair, and mismatch repair. Particularly sensitive targets appear to be proteins with zinc-binding structures, present in DNA repair proteins such as XPA, PARP-1 as well as in the tumor suppressor protein p53. Whether or not these interactions are due to displacement of zinc or due to reactions with thiol groups involved in zinc complexation or in other critical positions under realistic exposure conditions remains to be elucidated. Further potential mechanisms relate to the interference with cellular redox regulation, either by enhanced generation of ROS or by reaction with thiol groups involved in the regulation of signaling pathways. Particularly the combination of these multiple mechanisms may give rise to a high degree of genomic instability evident in cadmium-adapted cells, relevant not only for tumor initiation, but also for later steps in tumor development.

  5. 含氯气氛退火对CdTe薄膜性质影响的交流阻抗研究%Complex impedance spectroscopy analysis of CdCl_2 annealing on the CdTe polycrystalline thin films

    Institute of Scientific and Technical Information of China (English)

    付文博; 王文武; 刘庭良; 何绪林; 张静全; 冯良桓; 武莉莉; 李卫; 黎兵; 曾广根

    2011-01-01

    The complex impedance spectroscopy was measured for the cadmium telluride polycrystalline thin films of as-deposited and annealed under CdCl2 atmosphere.Then the complex impedance spectroscopy was fitting with using constant phase element(CPE) equivalent circuits model,and the dependence of grain bulk resistance,grain boundary resistance and time constant τ on the annealing process was realized.The results show that,grain bulk resistance increases,grain boundary resistance and time constant τ decrease with the increased temperature.%对近空间升华制备的CdTe薄膜进行了CdCl2气氛下热处理。测量了样品在室温下的交流阻抗特性,基于恒相位角元件(CPE)等效电路拟合所测量的复阻抗谱,分析了退火工艺对CdTe薄膜的晶粒体电阻、晶界电阻、弛豫时间的影响。结果表明,随退火温度的增加,晶粒电阻增大,晶界电阻减小,弛豫时间缩短。

  6. Effect of Indium on the Superconducting Transition Temperature of Tin Telluride

    Science.gov (United States)

    Zhong, Ruidan; Schneeloch, John; Shi, Xiaoya; Li, Qiang; Tranquada, John; Gu, Genda

    2013-03-01

    Indium-doped tin telluride is one of the most appealing topological superconductors. We have grown a series of Sn1-xInxTe crystals with different indium concentrations (0.1 <=x <=1.0). The results show indium doping improves the superconducting transition temperature significantly and is highly related to the indium concentration. The maximum Tc of indium-doped tin telluride polycrystalline is 4.5K for x =0.4. Single crystals of Sn1-xInxTe were also grown by the floating zone method, and their magnetic properties were characterized.

  7. Telluride films and waveguides for IR integrated optics

    Energy Technology Data Exchange (ETDEWEB)

    Barthelemy, Eleonore; Vigreux, Caroline; Pradel, Annie [Institut Charles Gerhardt Montpellier, UMR CNRS 5253, Universite Montpellier II, CC1503, 34095 Montpellier Cedex 5 (France); Parent, Gilles [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, Universite de Nancy-Lorraine, BP239, 54506 Vandoeuvre Les Nancy Cedex (France); Barillot, Marc [Thales Alenia Space, 100 Bld. du midi, BP99, 06156 Cannes La Bocca Cedex (France)

    2011-09-15

    The fabrication of micro-components for far infrared applications such as spatial interferometry requires the realization of single-mode channel waveguides being able to work in the infrared region. One of the key issues in case of channel waveguides is the selection of materials for the core layer. Amorphous telluride films are particularly attractive for their transparency in a large spectral domain in the infrared region. A second key issue is the selection of an appropriate method for film deposition. Indeed, waveguides for far infrared applications are characterized by a thick core layer (10-15 {mu}m, typically). The challenge is thus to select a deposition method which ensures the deposition of thick films of optical quality. In this paper, it is shown that thermal co-evaporation meets this challenge. In particular, it allows varying the composition of the films very easily and thus adjusting their optical properties (refractive index, optical band gap). The example of thermally co-evaporated Te-Ge films is given. Films with typical thickness of 7-15 {mu}m were elaborated. Their morphological, structural, thermal and optical properties were measured. A particular attention was paid to the checking of the film homogeneity. The realized waveguiding structures and their optical testing are then described. In particular, the first transmission measurements at 10.6 {mu}m are presented. In conclusion, the feasibility of micro-components based on the stacking and etching of chalcogenide films is demonstrated, opening the door to applications related to detection in the mid- and thermal infrared spectral domains (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Guangcan Luo

    2014-01-01

    Full Text Available The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

  9. Renal cadmium overload without nephrotoxicity.

    OpenAIRE

    1981-01-01

    A redundant nickel/cadmium battery worker was investigated for non-specific fatigue after completing five years in the industry. Sensitive techniques for in-vivo organ cadmium measurement showed a moderate accumulation in the liver but a very large concentration in the kidneys. Despite this, overall glomerular and tubular function were not impaired. It was concluded that the mechanism of proteinuria observed in some cadmium workers is obscure and not clearly related to the degree of kidney sa...

  10. Cadmium in Sweden - environmental risks

    Energy Technology Data Exchange (ETDEWEB)

    Parkman, H.; Iverfeldt, Aa. [Swedish Environmental Research Inst. (Sweden); Borg, H.; Lithner, G. [Stockholm Univ. (Sweden). Inst. for Applied Environmental Research

    1998-03-01

    This report aims at assessing possible effects of cadmium in the Swedish environment. Swedish soils and soft freshwater systems are, due to a generally poor buffering capacity, severely affected by acidification. In addition, the low salinity in the Baltic Sea imply a naturally poor organism structure, with some important organisms living close to their limit of physiological tolerance. Cadmium in soils is mobilized at low pH, and the availability and toxicity of cadmium in marine systems are enhanced at low salinity. The Swedish environment is therefore extra vulnerable to cadmium pollution. The average concentrations of cadmium in the forest mor layers, agricultural soils, and fresh-waters in Sweden are enhanced compared to `back-ground concentrations`, with a general increasing trend from the north to the south-west, indicating strong impact of atmospheric deposition of cadmium originating from the central parts of Europe. In Swedish sea water, total cadmium concentrations, and the fraction of bio-available `free` cadmium, generally increases with decreasing salinity. Decreased emissions of cadmium to the environment have led to decreasing atmospheric deposition during the last decade. The net accumulation of cadmium in the forest mor layer has stopped, and even started to decrease. In northern Sweden, this is due to the decreased deposition, but in southern Sweden the main reason is increased leakage of cadmium from the topsoil as a consequence of acidification. As a result, cadmium in the Swedish environments is undergoing an extended redistribution between different soil compartments, and from the soils to the aquatic systems. 90 refs, 23 figs, 2 tabs. With 3 page summary in Swedish

  11. New Material System for 3rd Generation IR Applications

    Science.gov (United States)

    2010-12-01

    misfit dislocations need to be generated somewhere in the thin film stack to alleviate this energy which ultimately propagates into the IR-absorbing...Laboratory ARO U.S. Army Research Office As arsenic Cd cadmium CdSe cadmium selenide CdTe cadmium telluride CdZnTe cadmium zinc telluride CHM...Laboratory (ARL) has begun investigating mercury cadmium selenide (HgCdSe) for infrared (IR) applications. Analogous to HgCdTe, HgCdSe is a tunable

  12. CADMIUM – ENVIRONMENTAL HAZARD

    Directory of Open Access Journals (Sweden)

    Henryka Langauer-Lewowicka

    2010-06-01

    Full Text Available The paper presents some information about current status of cadmium as an environmental health problem. Agricultural uses of phosphate fertilizers, sewage sludge and industrial uses of Cd are the major source of widespread of this metal at trace levels into the general environment and human foodstuffs. It is well known that high cadmium (Cd exposure causes renal damage, anemia, enteropathy, osteoporosis, osteomalacia, whereas the dose-response relationship at low levels exposure is less established. During the last decade an increasing number of studies have found an adverse health effects due to low environmental exposure to Cd. Many authors try to determine the relationship between Cd intake and Cd toxicity indicators, especially dealing renal tubular damage. The level of b2-microglobulin in urine is regarded as the most sensitive biomarker of renal disfunction due to low environmental Cd concentrations.

  13. Speciation of Dissolved Cadmium

    DEFF Research Database (Denmark)

    Holm, Peter Engelund; Andersen, Sjur; Christensen, Thomas Højlund

    1995-01-01

    Equilibrium dialysis and ion exchange methods, as well as computer calculations (GEOCHEM), were applied for speciation of dissolved cadmium (Cd) in test solutions and leachate samples. The leachate samples originated from soil, compost, landfill waste and industrial waste. The ion exchange (IE...... leachates showed different Cd speciation patterns as expected. Some leachates were dominated by free divalent Cd (1-70%), some by inorganic complexes (1-87%), and some by organic complexes (7-98%)....

  14. Low-temperature, template-free synthesis of single-crystal bismuth telluride nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Purkayastha, A. [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Lupo, F. [Max Planck Institut fuer Metallforschung, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Kim, S.; Borca-Tasciuc, T. [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Ramanath, G. [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Max Planck Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2006-02-17

    Synthesis of single-crystal bismuth telluride nanorods is reported by using a low-temperature, template-free approach. Films of thioglycolic acid functionalized nanorods doped with sulfur exhibit n-type behavior with a high Seebeck coefficient, holding promise for thermoelectric device applications. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  15. Electrodeposition of bismuth telluride thermoelectric films from a nonaqueous electrolyte using ethylene glycol

    NARCIS (Netherlands)

    Nguyen, H.P.; Wu, M.; Su, J.; Vullers, R.J.M.; Vereecken, P.M.; Fransaer, J.

    2012-01-01

    Ethylene glycol was studied as an electrolyte for the electrodeposition of thermoelectric bismuth telluride films by cyclic voltammetry, rotating ring disk electrode and electrochemical quartz crystal microbalance (EQCM). The reduction of both Bi3+ and Te4+ ions proceeds in one step without the form

  16. Structural Engineering of Vacancy Defected Bismuth Tellurides for Thermo-electric Applications

    Science.gov (United States)

    Termentzidis, K.; Pokropivny, A.; Xiong, S.-Y.; Chumakov, Y.; Cortona, P.; Volz, S.

    2012-10-01

    Molecular Dynamics and ab-initio simulations are used to find the most stable stoichiometries of Bismuth Tellurides with vacancy defects. The interest is to decrease the thermal conductivity of these compounds a key point to achieve high figure of merits. A reduction of 70% of the thermal conductivity is observed with Te vacancies of only 5%.

  17. Structural Engineering of Vacancy Defected Bismuth Tellurides for Thermo-electric Applications

    Directory of Open Access Journals (Sweden)

    Chumakov Y.

    2012-10-01

    Full Text Available Molecular Dynamics and ab-initio simulations are used to find the most stable stoichiometries of Bismuth Tellurides with vacancy defects. The interest is to decrease the thermal conductivity of these compounds a key point to achieve high figure of merits. A reduction of 70% of the thermal conductivity is observed with Te vacancies of only 5%.

  18. Some spectral response characteristics of ZnTe thin films

    Indian Academy of Sciences (India)

    R Sarma; N Mazumdar; H L Das

    2006-02-01

    Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of 10-6 torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films.

  19. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    Science.gov (United States)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  20. Is cadmium hazardous to health. Cadmium - ein Gesundheitsrisiko

    Energy Technology Data Exchange (ETDEWEB)

    Zartner-Nyilas, G.; Valentin, H.; Schaller, K.H.; Schiele, R.

    1983-01-01

    This study entitled ''Is cadmium hazardous to health'' summarizes the current state of knowledge on and experience with cadmium. The authors have made efforts to take into account the more recent literature relating to cadmium. The data evaluated were, especially, biological, toxicological, and epidemiological ones. A principal object was to try to assess the importance of the presence of cadmium in the environment to man. The interest was focused on the uptake of heavy metals with food, danger thresholds for the cadmium exposure of the population, nature and extent of eventual damage to health including possible carcinogenous effects, and suggestions for further points of main emphasis in research. 3 figs., 12 tabs.

  1. The ^{55}Fe X-ray Energy Response of Mercury Cadmium Telluride Near-Infrared Detector Arrays

    CERN Document Server

    Fox, Ori D; Wen, Yiting; Foltz, Roger D; Hill, Robert J; Kimble, Randy A; Malumuth, Eliot; Rauscher, Bernard J

    2009-01-01

    A technique involving ^{55}Fe X-rays provides a straightforward method to measure the response of a detector. The detector's response can lead directly to a calculation of the conversion gain (e^- ADU^{-1}), as well as aid detector design and performance studies. We calibrate the ^{55}Fe X-ray energy response and pair production energy of HgCdTe using 8 HST WFC3 1.7 \\micron flight grade detectors. The results show that each K$\\alpha$ X-ray generates 2273 \\pm 137 electrons, which corresponds to a pair-production energy of 2.61 \\pm 0.16 eV. The uncertainties are dominated by our knowledge of the conversion gain. In future studies, we plan to eliminate this uncertainty by directly measuring conversion gain at very low light levels.

  2. Gated tomographic radionuclide angiography using cadmium-zinc-telluride detector gamma camera; comparison to traditional gamma cameras

    DEFF Research Database (Denmark)

    Jensen, Maria Maj; Schmidt, Ulla; Huang, Chenxi

    2014-01-01

    PURPOSE: Estimation of left ventricular ejection fraction (LVEF) with equilibrium 99MTc-HSA equilibrium radionuclide angiography (MUGA) is frequently used for assessing cardiac function. The purpose of this study was to compare intra- and interobserver variation between three different gamma...... of agreement between each sequence of analyses for each of the three cameras. RESULTS: The lowest intraobserver variations in LVEF for the two NaI-detector cameras were 3.1% (-4.0% to 3.5%) for the planar and 3.4% (-4.2% to 4.5%) for SPECT (P ≤ 0.001-0.019), the highest result for the CZT SPECT camera was 2.......6% (-2.9% to 3.1%). Similarly, interobserver variation was 4.8% (-4.8% to 6.4%) and 4.9% (-5.4% to 7.5%), respectively, for each of the NaI-detector cameras and 3.3% (-3.4% to 4.3%) for the CZT SPECT camera (P ≤ 0.001-0.008). DISCUSSION: The CZT detector camera was superior to both NaI detector cameras...

  3. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, Michael David [Iowa State Univ., Ames, IA (United States)

    2001-05-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn,Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  4. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, Michael David [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn, Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  5. Spatial Mapping of the Mobility-Lifetime (microtau) Production in Cadmium Zinc Telluride Nuclear Radiation Detectors Using Transport Imaging

    Science.gov (United States)

    2013-06-01

    heavily dependent on the quality of semiconductor or scintillator material employed. The more uniformly the detector material collects charge, the...architecture. 2 B. DETECTOR THEORY In the most simplified case, semiconductor nuclear radiation detectors consist of detector material connected to...more electron-hole pairs make it to the detector contacts to reflect the intensity and wavelength of incident radiation. While scintillators and

  6. Special characteristics of fluorescence and resonance Rayleigh scattering for cadmium telluride nanocrystal aqueous solution and its interactions with aminoglycoside antibiotics

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    CdTe nanocrystals(CdTe NCs) were achieved by reaction of CdCl2 with KHTe solution and were capped with sodium mercaptoacetate.The product was detected by transmission electron microscopy(TEM),high-resolution transmission electron microscopy(HRTEM),energy dispersive spectroscopy(EDS),fluorescence spectra,ultraviolet-visible spectra and X-ray diffraction(XRD).The CdTe NCs are of cubic structure and the average size is about 5 nm.The fluorescence quantum yield of CdTe NCs aqueous solution increased from 37% to 97% after 20 d under room light.The maximum λem of fluorescence changed from 543 nm to 510 nm and the blue shift was 33 nm.CdTe NCs aqueous solution can be steady for at least 10 months at 4℃ in a refrigerator.The resonance Rayleigh scattering(RRS) of CdTe NCs in the aqueous solution was investigated.The maximum scattering peak was located at about 554 nm.The interactions of CdTe NCs with amikacin sulfate(AS) and micronomicin sulfate(MS) were investigated respectively.The effects of AS and MS on fluorescence and RRS of CdTe NCs were analyzed.It was found that AS and MS quenched the photoluminescence of CdTe NCs and enhanced RRS of CdTe NCs.Under optimum conditions,there are linear relationships between quenching intensity(F0-F),intensity of RRS(I-I0) and concentration of AS and MS.The detection limits(3б) of AS and MS are respectively 3.4 ng·mL-1 and 2.6 ng·mL-1 by the fluorescence quenching method,and 15.2 ng·mL-1 and 14.0 ng·mL-1 by the RRS method.The methods have high sensitivity,thus CdTe NCs may be used as fluorescence probes and RRS probes for the detection of aminoglycoside antibiotics.

  7. Effect of Nanosized Tin Oxide Layer on the Efficiency of Photovoltaic Processes in Film Solar Cells Based on Cadmium Telluride

    Directory of Open Access Journals (Sweden)

    G.S. Khrypunov

    2015-03-01

    Full Text Available The influence of the thickness of the nanosized layer on the efficiency of photoelectric processes in solar cells (SC ITO / SnO2 / CdS / CdTe / Cu / Au formed on different substrates was investigated. For device structures formed on the glass substrates, the maximum efficiency of 11.4 % is achieved when thickness of the tin oxide layer is 80 nm. For flexible solar cells formed on a polyimide film, the maximum efficiency of 10.8 % is observed when thickness of the tin oxide layer is 50 nm. This paper discusses the physical mechanisms of the observed differences in efficiency.

  8. Special characteristics of fluorescence and resonance Rayleigh scattering for cadmium telluride nanocrystal aqueous solution and its interactions with aminoglycoside antibiotics

    Institute of Scientific and Technical Information of China (English)

    LI TaiShan; LIU ShaoPu; LIU ZhongFang; HU XiaoLi; ZHANG LiPing

    2009-01-01

    CdTe nanocrystals (CdTe NCs) were achieved by reaction of CdCl2 with KHTe solution and were capped with sodium mercaptoacetate. The product was detected by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDS), fluorescence spectra, ultraviolet-visible spectra and X-ray diffraction (XRD). The CdTe NCs are of cubic structure and the average size is about 5 nm. The fluorescence quantum yield of CdTe NCs aqueous solution increased from 37% to 97% after 20 d under room light. The maximum λem of fluorescence changed from 543 nm to 510 nm and the blue shift was 33 nm. CdTe NCs aqueous solution can be steady for at least 10 months at 4℃ in a refrigerator. The resonance Rayleigh scattering (RRS) of CdTe NCs in the aqueous solution was investigated. The maximum scattering peak was located at about 554 nm. The interactions of CdTe NCs with amikacin sulfate (AS) and micronomicin sulfate (MS) were in-vestigated respectively. The effects of AS and MS on fluorescence and RRS of CdTe NCs were analyzed. It was found that AS and MS quenched the photoluminescence of CdTe NCs and enhanced RRS of CdTe NCs. Under optimum conditions, there are linear relationships between quenching intensity (F0-F), intensity of RRS (1-10) and concentration of AS and MS. The detection limits (3σ) of AS and MS are re-spectively 3.4 ng.mL-1 and 2.6 ng.mL-1 by the fluorescence quenching method, and 15.2 ng.mL-1 and 14.0 ng.mL-1 by the RRS method. The methods have high sensitivity, thus CdTe NCs may be used as fluorescence probes and RRS probes for the detection of aminoglycoside antibiotics.

  9. Projectbeschrijving Cadmium-informatiepunt (CIP)

    NARCIS (Netherlands)

    Meijer PJ

    1989-01-01

    To minimize the use of cadmium the Central Government has decided to perform the purchase of products and materials within the Central Government as much as possible within the Draft Cadmium Decree. The activities to achieve this are as far as could be seen at the start of the project in june

  10. Cadmium carcinogenesis – some key points

    OpenAIRE

    2011-01-01

    The article presents briefly the main mechanisms of cadmium carcinogenesis and the most important sites of cancer (lung, breast, prostate, testes, kidney) induced by cadmium. In spite of some evidence showing carcinogenic potential of cadmium, further research is still required to elucidate the relative contributions of various molecular mechanisms involved in cadmium carcinogenesis

  11. Cadmium exposure in the Swedish environment

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This report gives a thorough description of cadmium in the Swedish environment. It comprises three parts: Cadmium in Sweden - environmental risks;, Cadmium in goods - contribution to environmental exposure;, and Cadmium in fertilizers, soil, crops and foods - the Swedish situation. Separate abstracts have been prepared for all three parts

  12. Cadmium carcinogenesis – some key points

    Directory of Open Access Journals (Sweden)

    Loreta Strumylaite

    2011-09-01

    Full Text Available The article presents briefly the main mechanisms of cadmium carcinogenesis and the most important sites of cancer (lung, breast, prostate, testes, kidney induced by cadmium. In spite of some evidence showing carcinogenic potential of cadmium, further research is still required to elucidate the relative contributions of various molecular mechanisms involved in cadmium carcinogenesis

  13. Dual-channel optical sensing platform for detection of diminazene aceturate based on thioglycolic acid-wrapped cadmium telluride/cadmium sulfide quantum dots.

    Science.gov (United States)

    Hao, Chenxia; Zhou, Tao; Liu, Shaopu; Wang, Linlin; Huang, Bowen; Kuang, Nianxi; He, Youqiu

    2016-06-15

    A dual-channel optical sensing platform which combines the advantages of dual-wavelength overlapping resonance Rayleigh scattering (DWO-RRS) and fluorescence has been designed for the detection of diminazene aceturate (DA). It is based on the use of thioglycolic acid-wrapped CdTe/CdS quantum dots (Q-dots). In the absence of DA, the thioglycolic acid-wrapped CdTe/CdS Q-dots exhibit the high fluorescence spectrum and low RRS spectrum, so are selected to develop an easy-to-get system. In the presence of DA, the thioglycolic acid-wrapped CdTe/CdS Q-dots and DA form a complex through electrostatic interaction, which result in the RRS intensity getting enhanced significantly with new RRS peaks appearing at 317 and 397 nm; the fluorescence is powerfully quenched. Under optimum conditions, the scattering intensities of the two peaks are proportional to the concentration of DA in the range of 0.0061-3.0 μg mL(-1). The detection limits for the two single peaks are 4.1 ng mL(-1) and 3.3 ng mL(-1), while that of the DWO-RRS method is 1.8 ng mL(-1), indicating that the DWO-RRS method has high sensitivity. Besides, the fluorescence also exhibits good linear range from 0.0354 to 10.0 μg mL(-1) with a detection limit of 10.6 ng mL(-1). In addition, the system has been applied to the detection of DA in milk samples with satisfactory results.

  14. Cadmium immobilization by hydroxyapatite

    Directory of Open Access Journals (Sweden)

    Smičiklas Ivana D.

    2003-01-01

    Full Text Available The contamination of air, soil and water by cadmium is a great environmental problem. If cadmium occurs in nature in ionic form, soluble in water, it easily enters into the food chain. Hydroxyapatite (HAP, Ca-o(POAe(OH2 is a sparingly soluble salt and an excellent matrix for the removal of heavy metals from solutions. Considerable research attention has been paid to the bond between Cc/2+ ions and synthetic hydroxyapatite of known composition. The sorption mechanism is complex. The dominant process is ion exchange, but surface adsorption, surface complexation and coprecipitation can also contribute to the overall mechanism. The sorption capacity depends on the characteristics of hydroxyapatite itself and on the experimental conditions. Under optimum conditions a maximum capacity of 0.8 mol Cd2+/mol HAP can be achieved. HAP is a potential sorbent for the remediation of contaminated water and soil, for industrial waste treatment, and it is also referenced as a material that can be used as a barrier around waste depositories.

  15. Mineral of the month: cadmium

    Science.gov (United States)

    Klimasauskas, Edward

    2005-01-01

    Cadmium, which was once used almost exclusively for pigments, now has many diverse applications. Cadmium’s low melting point, excellent electrical conductivity and resistance to corrosion make it valuable for many products including batteries, electroplated coatings, stabilizers for plastics, solar cells and nonferrous alloys. Today’s cadmium is primarily used in rechargeable batteries, accounting for about 78 percent of consumption in 2004. In 2000, an estimated 3.5 billion consumer batteries were sold in the United States, of which almost 10 percent were nickel-cadmium batteries.

  16. Ab initio lattice dynamics and thermochemistry of layered bismuth telluride (Bi2Te3)

    Science.gov (United States)

    Zurhelle, Alexander F.; Deringer, Volker L.; Stoffel, Ralf P.; Dronskowski, Richard

    2016-03-01

    We present density-functional theory calculations of the lattice dynamics of bismuth telluride, yielding force constants, mean-square displacements and partial densities of phonon states which corroborate and complement previous nuclear inelastic scattering experiments. From these data, we derive an element- and energy-resolved view of the vibrational anharmonicity, quantified by the macroscopic Grüneisen parameter γ which results in 1.56. Finally, we calculate thermochemical properties in the quasiharmonic approximation, especially the heat capacity at constant pressure and the enthalpy of formation for bismuth telluride; the latter arrives at ▵H f (Bi2Te3)  =  -102 kJ mol-1 at 298 K.

  17. Synthesis of lead telluride particles by thermal decomposition method for thermoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Leontyev, V.G.; Ivanova, L.D. [Institution of Russian Academy of Sciences A.A. Baikov Institute of Metallurgy and Material Science RAS, Leninskii prospect, 49, 119991 Moscow (Russian Federation); Bente, K.; Lazenka, V.V. [Institut fuer Mineralogie, Kristallographie und Materialwissenschaft, Leipzig University, Scharnhorst str. 20, 04275 Leipzig (Germany); Gremenok, V.F. [Scientific-Practical Materials Research Centre of the NAS of Belarus, P. Brovka str. 19, 220072 Minsk (Belarus)

    2012-06-15

    The lead telluride fine crystalline particles were synthesized using thermal decomposition and chemical interaction of lead acetate and tellurium powder mixture in reducing atmosphere (H{sub 2}). For the process control, thermal gravimetry (TG), the different-scanning calorimetry (DSC), X-ray diffraction (XRD), electronic microscopy (SEM) and measurements of the specific surface of particles were used. Additionally the influence of gas phases on the decomposition kinetics, crystal structure, size, specific surface of the particles and the physical properties were analyzed. Seebeck coefficient values increased with decreasing synthesis temperature and increasing specific surfaces of the powder. The presented method of preparing lead telluride polydisperse particles is developed to create nano-structured thermoelectric materials with high figure of merit. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Synthesis of copper telluride nanowires using template-based electrodeposition method as chemical sensor

    Indian Academy of Sciences (India)

    Sandeep Arya; Saleem Khan; Suresh Kumar; Rajnikant Verma; Parveen Lehana

    2013-08-01

    Copper telluride (CuTe) nanowires were synthesized electrochemically from aqueous acidic solution of copper (II) sulphate (CuSO4.5H2O) and tellurium oxide (TeO2) on a copper substrate by template-assisted electrodeposition method. The electrodeposition was conducted at 30 °C and the length of nanowires was controlled by adjusting deposition time. Structural characteristics were examined using X-ray diffraction and scanning electron microscope which confirm the formation of CuTe nanowires. Investigation for chemical sensing was carried out using air and chloroform, acetone, ethanol, glycerol, distilled water as liquids having dielectric constants 1, 4.81, 8.93, 21, 24.55, 42.5 and 80.1, respectively. The results unequivocally prove that copper telluride nanowires can be fabricated as chemical sensors with enhanced sensitivity and reliability.

  19. Kelvin probe studies of cesium telluride photocathode for the AWA photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Velazquez, D.; Wisniewski, E. E.; Yusof, Z.; Harkay, K.; Spentzouris, L.; Terry, J. [Physics Department at Illinois Institute of Technology, Chicago, IL 60616 and High Energy Physics Division at Argonne National Laboratory, Lemont, IL 60439 (United States); High Energy Physics Division at Argonne National Laboratory, Lemont, IL 60439 (United States); Accelerator Science Division at Argonne National Laboratory, Lemont, IL 60439 (United States); Physics Department at Illinois Institute of Technology, Chicago, IL 60616 (United States)

    2012-12-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (> 1%), is robust in a photoinjector, and long lifetime. This photocathode is fabricated in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch ({approx}50 nC) in a long bunch train. We present some results from a study of the work function of cesium telluride photocathode using the Kelvin Probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV light exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating.

  20. Aqueous-solution route to zinc telluride films for application to CO₂ reduction.

    Science.gov (United States)

    Jang, Ji-Wook; Cho, Seungho; Magesh, Ganesan; Jang, Youn Jeong; Kim, Jae Young; Kim, Won Yong; Seo, Jeong Kon; Kim, Sungjee; Lee, Kun-Hong; Lee, Jae Sung

    2014-06-01

    As a photocathode for CO2 reduction, zinc-blende zinc telluride (ZnTe) was directly formed on a Zn/ZnO nanowire substrate by a simple dissolution-recrystallization mechanism without any surfactant. With the most negative conduction-band edge among p-type semiconductors, this new photocatalyst showed efficient and stable CO formation in photoelectrochemical CO2 reduction at -0.2--0.7 V versus RHE without a sacrificial reagent.

  1. The heat capacity of solid antimony telluride Sb2Te3

    Science.gov (United States)

    Pashinkin, A. S.; Malkova, A. S.; Mikhailova, M. S.

    2008-05-01

    The literature data on the heat capacity of solid antimony telluride over the range 53 895 K were analyzed. The heat capacity of Sb2Te3 was measured over the range 350 700 K on a DSM-2M calorimeter. The equation for the temperature dependence was suggested. The thermodynamic functions of Sb2Te3 were calculated over the range 298.15 700 K.

  2. Cadmium effects on the thyroid gland.

    Science.gov (United States)

    Jancic, Snezana A; Stosic, Bojan Z

    2014-01-01

    Cadmium has been listed as one of the 126 priority pollutants and a category I carcinogen. Carcinogenic effects of cadmium on the lungs, testicles, and prostate are widely recognized, but there has been insufficient research on the effect of cadmium on the thyroid gland. Cadmium has the affinity to accumulate not only in the liver, kidneys, and pancreas but also in the thyroid gland. It has been established that cadmium blood concentration correlates positively with its accumulation in the thyroid gland. Women of fertile age have higher cadmium blood and urine concentrations than men. In spite of its redox inertia, cadmium brings about oxidative stress and damage to the tissue by indirect mechanisms. Mitochondria are considered to be the main intracellular targets for cadmium. Colloid cystic goiter, adenomatoid follicular hyperplasia with low-grade dysplasia and thyroglobulin hypo- and asecretion, and parafollicular cell diffuse and nodular hyperplasia and hypertrophy are often found in chronic cadmium toxicity. © 2014 Elsevier Inc. All rights reserved.

  3. Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

    Science.gov (United States)

    Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

    2014-10-01

    Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

  4. Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Zweibel, K. (eds.)

    1992-01-01

    Since the development of the first silicon based photovoltaic cell in the 1950's, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

  5. Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes. A workshop report

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Zweibel, K. [eds.

    1992-10-01

    Since the development of the first silicon based photovoltaic cell in the 1950`s, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

  6. Enrichment of cadmium in biomasses

    Energy Technology Data Exchange (ETDEWEB)

    Gwenner, C.; Wittig, H.; Glombitza, F.

    1986-01-01

    The uptake of cadmium ions from an aqueous solution by living, resting, and dead biomasses was investigated. The dependence of the uptaked amounts on pH-value of the medium, temperature and concentration of cadmium ions is demonstrated as well as the rate of uptake. Maximum realisable concentrations were 12 mg/g biomass in living cells and about 20 mg/g biomass in resting or dead cells, respectively.

  7. Solar Spectral and Module Temperature Influence on the Outdoor Performance of Thin Film PV Modules Deployed on a Sunny Inland Site

    Directory of Open Access Journals (Sweden)

    G. Nofuentes

    2013-01-01

    Full Text Available This work aims at analysing the influence of both module temperature and solar spectrum distribution on the outdoor performance of the following thin film technologies: hydrogenated amorphous silicon (a-Si:H, cadmium telluride (CdTe, copper indium gallium selenide sulfide (CIGS, and hydrogenated amorphous silicon/hydrogenated microcrystalline silicon hetero-junction (a-Si:H/μc-Si:H. A 12-month experimental campaign carried out in a sunny inland site in which a module of each one of these technologies was tested and measured outdoors has provided the necessary empirical data. Results show that module temperature exerts a limited influence on the performance of the tested a-Si:H, CdTe, and a-Si:H/μc-Si:H modules. In contrast, the outdoor behaviour of the CIGS module is the most affected by its temperature. Blue-rich spectra enhance the outdoor behaviour of the a-Si:H and a-Si:H/μc-Si:H modules while it is the other way round for the CIGS module. However, the CdTe specimen shows little sensitivity to the solar spectrum distribution. Anyway, spectral effects are scarcely relevant on an annual basis, ranging from gains for the CIGS module (1.5% to losses for the a-Si:H module (1.0%. However, the seasonal impact of the spectrum shape is more noticeable in these two materials; indeed, spectral issues may cause performance gains or losses of up to some 4% when winter and summer periods are considered.

  8. Fabrication of stable, large-area thin-film CdTe photovoltaic modules. Final subcontract report, May 10, 1991--February 28, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, T.X. [Solar Cells, Inc., Toledo, OH (United States)

    1995-06-01

    During the period of this subcontract, May 1991 through February 1995, Solar Cells, Inc. has developed and demonstrated a low-cost process to fabricate stable large-area cadmium telluride based thin-film photovoltaic modules. This report summarizes the final phase of the project which is concentrated on process optimization and product life tests. One of the major post-deposition process steps, the CdCl{sub 2} heat treatment, has been experimentally replaced with alternative treatments with vapor chloride or chlorine gas. Material and device qualities associated with alternative treatments are comparable or superior to those with the conventional treatment. Extensive experiments have been conducted to optimize the back-electrode structure in order to ensure long term device stability. Numerous small-area cells and minimodules have been subjected to a variety of stress tests, including but not limited to continuous light soak under open or short circuit or with resistive load, for over 10,000 hours. Satisfactory stability has been demonstrated on 48 cm{sup 2} and 64 cm{sup 2} minimodules under accelerated tests and on 7200 cm{sup 2} large modules under normal operating conditions. The conversion efficiency has also been significantly improved during this period. The total area efficiency of 7200 cm{sup 2} module has reached 8.4%, corresponding to a 60.3W normalized output; the efficiency of 64 cm{sup 2} minimodules and 1.1 cm{sup 2} cells has reached 10.5% (aperture area) and 12.4% (total area), respectively.

  9. Zinc-induced protection against cadmium

    Energy Technology Data Exchange (ETDEWEB)

    Early, J.L.; Schnell, R.C.

    1978-02-01

    Pretreatment of male rats with cadmium acetate potentiates the duration of hexobarbital hypnosis and inhibits the rate of hepatic microsomal drug metabolism. Pretreatment of rats with zinc acetate protects against these alterations in drug action elicited by cadmium.

  10. Rising environmental cadmium levels in developing countries ...

    African Journals Online (AJOL)

    olayemitoyin

    molecular pathways of human disease, providing insight for the prevention of genome instability and associated disease ... systems. The potential for cadmium to cause toxicity has been ...... Comparison of the effects of arsenic and cadmium.

  11. Metallothionein and bioaccumulation of cadmium in juvenile bluegills exposed to aqueous and sediment-associated cadmium

    Energy Technology Data Exchange (ETDEWEB)

    Cope, W.G.

    1991-01-01

    The author evaluated metallothionein (MT), free (unbound) hepatic cadmium and whole body cadmium as indicators of cadmium exposure in juvenile bluegills Lepomis macrochirus in laboratory tests. Two types of cadmium exposure were tested; aqueous and sediment-associated. In the aqueous tests, fish were exposed to cadmium (0.0 to 32.3 [mu]g/L) in an intermittent-flow diluter. In the sediment-associated cadmium test, fish were exposed to resuspended river sidment containing 1.3 to 21.4 [mu]g Cd/g (dry weight) at a nominal total suspended solids concentration of 1,000 mg/L in revolving, circular glass exposure chambers. Total cadmium concentrations were measured in various bluegill liver fractions, whole bluegill, water, and resuspended sediment to assess the partitioning and bioaccumulation of cadmium after the tests. Mean concentrations of MT and free cadmium in bluegill livers and concentrations of cadmium in whole bluegills were positively correlated with aqueous cadmium concentration and were equally suitable as indicators of aqueous cadmium exposure. Sediment-associated cadmium was biologically available, but to a lesser extent than aqueous cadmium. Cadmium concentrations in whole bluegills exposed to resuspended river sediment were 1.5- to 3.5-fold the concentrations in bluegills in sediment-free controls. Free cadmium and MT concentrations in bluegill liver and whole-body cadmium concentrations in bluegills were positively correlated with the cadmium concentrations in filtered water, resuspended sediment, and bulk river sediment; however, whole-body cadmim concentrations were a more sensitive indicator of exposure to sediment-associated cadmium than either free cadmium or MT concentratons in liver.

  12. Bioavailability of cadmium from linseed and cocoa

    DEFF Research Database (Denmark)

    Hansen, Max; Sloth, Jens Jørgen; Rasmussen, Rie Romme

    In Denmark and EU the exposure of cadmium from food is at a level that is relatively close to the Tolerable Daily Intake (TDI). This report describes an investigation of the bioavailability of cadmium in selected food items known to contain high levels of cadmium. The purpose was to provide data ...... or crushed linseed nor the intake of cocoa and chocolate....

  13. Feasibility of preparing patterned molybdenum coatings on bismuth telluride thermoelectric modules.

    Energy Technology Data Exchange (ETDEWEB)

    Sarobol, Pylin; Hall, Aaron Christopher; Miller, Stephen Samuel; Knight, Marlene E.; LePage, William S.; Sobczak, Catherine Elizabeth.; Wesolowski, Daniel Edward

    2013-09-01

    Molybdenum electrical interconnects for thermoelectric modules were produced by air plasma spraying a 30%CE%BCm size molybdenum powder through a laser-cut Kapton tape mask. Initial feasibility demonstrations showed that the molybdenum coating exhibited excellent feature and spacing retention (~170%CE%BCm), adhered to bismuth-telluride, and exhibited electrical conductivity appropriate for use as a thermoelectric module interconnect. A design of experiments approach was used to optimize air plasma spray process conditions to produce a molybdenum coating with low electrical resistivity. Finally, a molybdenum coating was successfully produced on a fullscale thermoelectric module. After the addition of a final titanium/gold layer deposited on top of the molybdenum coating, the full scale module exhibited an electrical resistivity of 128%CE%A9, approaching the theoretical resistivity value for the 6mm module leg of 112%CE%A9. Importantly, air plasma sprayed molybdenum did not show significant chemical reaction with bismuth-telluride substrate at the coating/substrate interface. The molybdenum coating microstructure consisted of lamellar splats containing columnar grains. Air plasma sprayed molybdenum embedded deeply (several microns) into the bismuth-telluride substrate, leading to good adhesion between the coating and the substrate. Clusters of round pores (and cracks radiating from the pores) were found immediately beneath the molybdenum coating. These pores are believed to result from tellurium vaporization during the spray process where the molten molybdenum droplets (2623%C2%B0C) transferred their heat of solidification to the substrate at the moment of impact. Substrate cooling during the molybdenum deposition process was recommended to mitigate tellurium vaporization in future studies.

  14. Oral cadmium chloride intoxication in mice

    DEFF Research Database (Denmark)

    Andersen, O; Nielsen, J B; Svendsen, P

    1988-01-01

    Diethyldithiocarbamate (DDC) is known to alleviate acute toxicity due to injection of cadmium salts. However, when cadmium chloride was administered by the oral route, DDC enhanced rather than alleviated the acute toxicity; both oral and intraperitoneal (i.p.) administration of DDC had this effect....... Thus, orally administered DDC enhanced cadmium-induced duodenal and ileal tissue damage and inhibition of peristalsis, as indicated by an increased intestinal transit time. At low cadmium doses, the whole-body retention of cadmium was increased by oral DDC administration. Intraperitoneally administered...

  15. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while

  16. Iron telluride nanorods-based system for the detection of total mercury in blood

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Prathik; Lin, Zong-Hong [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Liang, Chi-Te [Department of Physics, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Chang, Huan-Tsung, E-mail: changht@ntu.edu.tw [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-12-15

    Graphical abstract: Elucidation of the detection of mercury using iron telluride nanorods (FeTe NRs), and dose-response curve for varying concentrations of Hg{sup 2+}. Highlights: Black-Right-Pointing-Pointer Iron telluride nanorods (FeTe NRs) are prepared from tellurium nanowires (Te NWs). Black-Right-Pointing-Pointer Mercury telluride nanorods (HgTe NRs) form by cation exchange reaction of FeTe NRs. Black-Right-Pointing-Pointer Fe{sup 2+} ions released catalyze the oxidation of ABTS by H{sub 2}O{sub 2}. Black-Right-Pointing-Pointer Mercury is effectively determined in blood with an LOD of 1.31 nM at S/N ratio 3. - Abstract: We have developed a simple, colorimetric iron telluride (FeTe) nanorods (NRs) based system for the detection of mercury, mainly based on the cation exchange reaction between FeTe NRs and Hg{sup 2+}. FeTe NRs (length, 105 {+-} 21 nm) react with Hg{sup 2+} to form HgTe NRs (length, 112 {+-} 26 nm) and consequently release Fe{sup 2+} ions that catalyzes the oxidation between a peroxidase substrate 2,2 Prime -azino-bis(3-ethylbenzo-thiazoline-6-sulfonic acid) diammonium salt (ABTS) and H{sub 2}O{sub 2}. The concentration of Fe{sup 2+} and thereby Hg{sup 2+} can be determined by measuring the absorbance of the ABTS oxidized product at 418 nm. This approach allows the detection of Hg{sup 2+}, with a limit of detection of 1.31 nM at a signal-to-noise ratio 3 and a linear range 5-100 nM (R{sup 2} = 0.99). The low-cost, simple, sensitive, and reproducible assay has been validated for the detection of Hg{sup 2+} in a blood sample (SRM 955c), with the result being in good agreement with that provided by National Institute of Standards and Technology.

  17. Terahertz-field-induced second harmonic generation through Pockels effect in zinc telluride crystal.

    Science.gov (United States)

    Cornet, Marion; Degert, Jérôme; Abraham, Emmanuel; Freysz, Eric

    2014-10-15

    We report on the second harmonic generation (SHG) of a near-infrared pulse in a zinc telluride crystal through the Pockels effect induced by an intense terahertz pulse. The temporal and angular behaviors of the SHG have been measured and agree well with theoretical predictions. This phenomenon, so far overlooked, makes it possible to generate second harmonic through cascading of two second-order nonlinear phenomena in the near-infrared and terahertz ranges. We also show how this cascading process can be used to sample terahertz pulses.

  18. High resolution X-ray diffraction imaging of lead tin telluride

    Science.gov (United States)

    Steiner, Bruce; Dobbyn, Ronald C.; Black, David; Burdette, Harold; Kuriyama, Masao; Spal, Richard; Simchick, Richard; Fripp, Archibald

    1991-01-01

    High resolution X-ray diffraction images of two directly comparable crystals of lead tin telluride, one Bridgman-grown on Space Shuttle STS 61A and the other terrestrially Bridgman-grown under similar conditions from identical material, present different subgrain structure. In the terrestrial, sample 1 the appearance of an elaborate array of subgrains is closely associated with the intrusion of regions that are out of diffraction in all of the various images. The formation of this elaborate subgrain structure is inhibited by growth in microgravity.

  19. Influence of Zn2+ doping on the crystal structure and optical-electrical properties of CdTe thin films

    Science.gov (United States)

    Kavitha, R.; Sakthivel, K.

    2015-10-01

    The present study reports the synthesis of Cd1-xZnxTe (x = 0, 0.025, 0.050, 0.075 and 0.100) nanocrystalline thin film through a simple two step method. In the first step fine nanoparticles of Cd1-xZnxTe was prepared by solvothermal microwave irradiation (SMI) technique and then deposited as thin film using dip-coating technique. X-ray diffraction study showed that films are polycrystalline with cubic phase, which are preferentially oriented along the (1 1 1) direction. No impurity phase was observed in the XRD pattern even after higher concentration of doping (x = 0.100) of Zn. FESEM study revealed that the films are homogeneous without cracks and pinholes. TEM micrographs revealed the particles are slightly agglomerated and lesser than 25 nm. The optical absorption study revealed that pure and doped CdTe films possess a direct band gap material with bandgap values between 2.39 and 2.63 eV (±0.02 eV). The values of optical bandgap increase with an increase in dopant (Zn) concentration from x = 0.025 to 0.10. The pure cadmium telluride (CdTe) nanocrystalline film shows a strong green emission peak centered at about 525 nm. The emission peaks of Cd1-xZnxTe nanocrystalline films are red shifted from 525 nm to 611 nm according to the dopant (Zn2+) concentration. The grains in the prepared films are uniformly distributed, which was confirmed by narrow full width at half maximum (FWHM) of the emission peaks (40-65 nm). The DC conductivity has increased by 1.25 and 4 orders as the concentration of dopant increases from x = 0.025 to 0.10 at room temperature (30 °C) and 150 °C respectively. The higher conductivity value is underpinned by the smaller activation energy value and is explained by thermionic emission mechanism.

  20. Thin-film CdTe detector for microdosimetric study of radiation dose enhancement at gold-tissue interface.

    Science.gov (United States)

    Paudel, Nava Raj; Shvydka, Diana; Parsai, E Ishmael

    2016-09-08

    Presence of interfaces between high and low atomic number (Z) materials, often encountered in diagnostic imaging and radiation therapy, leads to radiation dose perturbation. It is characterized by a very narrow region of sharp dose enhancement at the interface. A rapid falloff of dose enhancement over a very short distance from the interface makes the experimental dosimetry nontrivial. We use an in-house-built inexpensive thin-film Cadmium Telluride (CdTe) photodetector to study this effect at the gold-tissue interface and verify our experimental results with Monte Carlo (MC) modeling. Three-micron thick thin-film CdTe photodetectors were fabricated in our lab. One-, ten- or one hundred-micron thick gold foils placed in a tissue-equivalent-phantom were irradiated with a clinical Ir-192 high-dose-rate (HDR) source and current measured with a CdTe detector in each case was compared with the current measured for all uniform tissue-equivalent phantom. Percentage signal enhancement (PSE) due to each gold foil was then compared against MC modeled percentage dose enhancement (PDE), obtained from the geometry mimicking the experimental setup. The experimental PSEs due to 1, 10, and 100 μm thick gold foils at the closest measured distance of 12.5μm from the interface were 42.6 ± 10.8 , 137.0 ± 11.9, and 203.0 ± 15.4, respectively. The corresponding MC modeled PDEs were 38.1 ± 1, 164 ± 1, and 249 ± 1, respectively. The experimental and MC modeled values showed a closer agreement at the larger distances from the interface. The dose enhancement in the vicinity of gold-tissue interface was successfully measured using an in-house-built, high-resolution CdTe-based photodetector and validated with MC simulations. A close agreement between experimental and the MC modeled results shows that CdTe detector can be utilized for mapping interface dose distribution encountered in the application of ionizing radiation.

  1. Arsenic-cadmium interaction in rats.

    Science.gov (United States)

    Díaz-Barriga, F; Llamas, E; Mejía, J J; Carrizales, L; Santoyo, M E; Vega-Vega, L; Yáñez, L

    1990-11-01

    Simultaneous exposure to cadmium and arsenic is highly probable in the urban area of San Luis Potosi, Mexico due to common localization of copper and zinc smelters. Therefore, in this work, rats were intraperitoneally exposed either to cadmium or arsenic alone, or simultaneously to both metals. The effects of these treatments on three different toxicological parameters were studied. Cadmium modified the LD50 of arsenic and conversely arsenic modified the LD50 for cadmium. At the histopathological level, arsenic appeared to protect against the cadmium effects, especially on testes. This protective effect seemed to be related to the glutathione levels found in this tissue: rats exposed to both arsenic and cadmium, presented glutathione values intermediate to those observed after exposure to either metal alone; arsenic had the highest value and cadmium the lowest. In liver, rats exposed to arsenic, cadmium or arsenic and cadmium, presented glutathione values below those in the saline group, with the lowest value corresponding to the arsenic and cadmium treatment. The results appear to support the proposed interaction between arsenic and cadmium and coexposure to both metals seems to alter certain effects produced by either metal alone.

  2. Effect of Substrate Temperature on Structural and Morphological Parameters Of ZnTe Thin Films

    Directory of Open Access Journals (Sweden)

    K.D. Patel

    2011-01-01

    Full Text Available Vacuum evaporated thin films of Zinc Telluride (ZnTe of 5000 Å thickness have been deposited on glass substrates at different substrate temperatures (303 K, 373 K, 448 K. Structural parameters were obtained using XRD analysis. Atomic Force Microscope (AFM in non-contact mode has been used to study the surface morphological properties of the deposited thin films. The results obtained from structural and surface morphological studies have been correlated and it is found that the films deposited at higher substrate temperatures possess increasingly good crystallinity and smoother surfaces.

  3. Insulin Expression in Rats Exposed to Cadmium

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Objectives To investigate the effects of cadmium exposure on insulin expression in rats. Methods Eighteen adult SD assessed. The levels of cadmium and zinc in pancreas, blood and urine glucose, serum insulin and urine NAG (N-acyetyl-β-glucosaminidase) were determined. The gene expressions of metallothionein (MT) and insulin were also measured,and the oral glucose tolerance tests (OGTT) were carried out. Results The contents of cadmium in pancreas in cadmium-treated rats were higher than that in the control group, which was associated with slight increase of zinc in pancreas.not change significantly after cadmium administration, and the UNAG had no change in Cd-treated group. The gene expression the change of the expression of insulin, MT-Ⅰ and MT-Ⅱ genes. Cadmium can influence the biosynthesis of insulin, but does not induce the release of insulin. The dysfunction of pancreas occurs earlier than that of kidney after administration of cadmium.

  4. Nickel-Cadmium Battery Charger.

    Science.gov (United States)

    1981-02-23

    continuity testing. T, . Tempe ratutre control and measurerne it. n. Fiise 4cOntinuity testing. Li U o. Coulometer performance evaluacion . p. Heater...Inc., AFAPf.-Te-72-85, "MaintenruAe,-z Fret, ?atterly Syzem, Model No. EMBCII14C Tiatterv’ Sy ste.ci, Sealed Cell, N’ickel (Cadmium~.1, integral Charge

  5. Linearly polarized, Q-switched, erbium-doped fiber laser incorporating a bulk-structured bismuth telluride/polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Lee, Jinho; Lee, Junsu; Koo, Joonhoi; Chung, Hojai; Lee, Ju Han

    2016-07-01

    We experimentally demonstrate a linearly polarized, passively Q-switched, erbium (Er)-doped fiber laser using a saturable absorber (SA) based on a composite consisting of a bulk-structured bismuth telluride (Bi2Te3) topological insulator (TI) and polyvinyl alcohol (PVA). The SA was constructed on a polarization maintaining (PM) fiber ferrule platform, which had a sandwich structure. Its saturation intensity and modulation depth were measured to be ˜ and ˜4.1%, respectively. Using the prepared Bi2Te3/PVA SA in a PM Er-doped fiber ring laser, stable Q-switched pulses with a degree of polarization of ˜98.6% and an azimuth angle of ˜-0.34 deg were demonstrated. The minimum pulse width was measured to be ˜1.58 μs at a repetition rate of 47.1 kHz. This experimental demonstration verifies that a thin film based on a bulk-structured Bi2Te3 TI can fit into a sandwich-structured SA based on PM fiber ferrules.

  6. Electrowetting on dielectric-actuation of microdroplets of aqueous bismuth telluride nanoparticle suspensions

    Energy Technology Data Exchange (ETDEWEB)

    Dash, Raj K [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Borca-Tasciuc, T [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Purkayastha, A [Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Ramanath, G [Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States)

    2007-11-28

    This work reports the actuation of droplets of nanofluid by the electrowetting on dielectric (EWOD) effect. The nanofluid is comprised of an aqueous (deionized water) suspension of 3 nm diameter bismuth telluride nanoparticles capped with thioglycolic acid (TGA). Microdroplets of nanofluid are cast on Si(001) wafers coated with 100 nm thick layers of silicon dioxide and AF Teflon. Applying an electric field between the substrate and an electrode immersed in the nanofluid droplet results in a strong change in the contact angle from 110{sup 0} to 84{sup 0} for a 0-60 V voltage range. The droplets of nanofluid exhibit enhanced stability and absence of contact angle saturation in the tested voltage range when compared with droplets of aqueous solutions of 0.01 M Na{sub 2}SO{sub 4} or thioglycolic acid in deionized water. We propose that ion generation due to capping-agent desorption is a key factor determining the EWOD effect in the bismuth telluride nanofluid along with the nanoparticle contribution to charge transport. Our results open up new vistas for using nanofluids for microscale actuator device applications.

  7. Facile production of thermoelectric bismuth telluride thick films in the presence of polyvinyl alcohol.

    Science.gov (United States)

    Lei, C; Burton, M R; Nandhakumar, I S

    2016-06-01

    Bismuth telluride is currently the best performing thermoelectric material for room temperature operations in commercial thermoelectric devices. We report the reproducible and facile production of 600 micron thick bismuth telluride (Bi2Te3) layers by low cost and room temperature pulsed and potentiostatic electrodeposition from a solution containing bismuth and tellurium dioxide in 2 M nitric acid onto nickel in the presence of polyvinyl alcohol (PVA). This was added to the electrolyte to promote thick layer formation and its effect on the structure, morphology and composition of the electrodeposits was investigated by SEM and EDX. Well adherent, uniform, compact and stoichiometric n-type Bi2Te3 films with a high Seebeck coefficient of up to -200 μV K(-1) and a high electrical conductivity of up to 400 S cm(-1) resulting in a power factor of 1.6 × 10(-3) W m(-1) K(-2) at film growth rates of 100 μm h(-1) for potentiostatic electrodeposition were obtained. The films also exhibited a well defined hexagonal structure as determined by XRD.

  8. A density-functional study on the electronic and vibrational properties of layered antimony telluride

    Science.gov (United States)

    Stoffel, Ralf P.; Deringer, Volker L.; Simon, Ronnie E.; Hermann, Raphaël P.; Dronskowski, Richard

    2015-03-01

    We present a comprehensive survey of electronic and lattice-dynamical properties of crystalline antimony telluride (Sb2Te3). In a first step, the electronic structure and chemical bonding have been investigated, followed by calculations of the atomic force constants, phonon dispersion relationships and densities of states. Then, (macroscopic) physical properties of Sb2Te3 have been computed, namely, the atomic thermal displacement parameters, the Grüneisen parameter γ, the volume expansion of the lattice, and finally the bulk modulus B. We compare theoretical results from three popular and economic density-functional theory (DFT) approaches: the local density approximation (LDA), the generalized gradient approximation (GGA), and a posteriori dispersion corrections to the latter. Despite its simplicity, the LDA shows excellent performance for all properties investigated—including the Grüneisen parameter, which only the LDA is able to recover with confidence. In the absence of computationally more demanding hybrid DFT methods, the LDA seems to be a good choice for further lattice dynamical studies of Sb2Te3 and related layered telluride materials.

  9. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 3 final technical report, 14 March 1997--1 April 1998

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R.C.; Dorer, G.L.; Jayamaha, U.; Hanak, J.J. [Solar Cells, Inc., Toledo, OH (United States)

    1998-09-01

    Thin-film PV devices based on cadmium telluride have been identified as one of the candidates for high-performance, low-cost source of renewable electrical energy. Roadblocks to their becoming a part of the booming PV market growth have been a low rate of production and high manufacturing cost caused by several rate-limiting process steps. Solar Cells Inc. has focused on the development of manufacturing processes that will lead to high volume and low-cost manufacturing of solar cells and on increasing the performance of the present product. The process research in Phase 3 was concentrated on further refinement of a newly developed vapor transport deposition (VTD) process and its implementation into the manufacturing line. This development included subsystems for glass substrate transport, continuous feed of source materials, generation of source vapors, and uniform deposition of the semiconductor layers. As a result of this R and D effort, the VTD process has now achieved a status in which linear coating speeds in excess of 8 ft/min have been achieved for the semiconductor, equal to about two modules per minute, or 144 kW per 24 hour day. The process has been implemented in a production line, which is capable of round-the-clock continuous production of coated substrates 120 cm x 60 cm in size at a rate of 1 module every four minutes, equal to 18 kW/day. Currently the system cycle time is limited by the rate of glass introduction into the system and glass heating, but not by the rate of the semiconductor deposition. A new SCI record efficiency of 14.1% has been achieved for the cells.

  10. Modulation of cadmium bioaccumulation and enhancing cadmium tolerance in Pichia kudriavzevii by sodium chloride preincubation.

    Science.gov (United States)

    Ma, Ning; Li, Chunsheng; Zhang, Dandan; Yu, Jinzhi; Xu, Ying

    2016-07-01

    Application of growing microorganisms for cadmium removal is limited by the sensitivity of living cells to cadmium. The effects of sodium chloride (NaCl) preincubation on the cadmium bioaccumulation and tolerance of Pichia kudriavzevii and Saccharomyces cerevisiae were investigated in this study. NaCl preincubation significantly reduced the intracellular and cell-surface cadmium bioaccumulation of P. kudriavzevii at both 6 and 20 mg L(-1) cadmium, while no obvious effect was observed in S. cerevisiae except that the intracellular cadmium bioaccumulation at 20 mg L(-1) cadmium was reduced obviously by 20-60 g L(-1)  NaCl. For both yeasts, the improved contents of protein and proline after NaCl preincubation contributed to the cadmium tolerance. The thiol contents in P. kudriavzevii under cadmium stress were alleviated by NaCl preincubation, which might be due to the decrease of intracellular cadmium bioaccumulation. NaCl preincubation enhanced the contents of glycerol and trehalose in P. kudriavzevii under cadmium stress, while no acceleration was observed in S. cerevisiae. The results suggested that NaCl preincubation could be applied in cadmium removal by growing P. kudriavzevii to increase the cadmium tolerance of the yeast.

  11. Mechanisms of cadmium induced genomic instability

    Energy Technology Data Exchange (ETDEWEB)

    Filipic, Metka, E-mail: metka.filipic@nib.si [National Institute of Biology, Department for Genetic Toxicology and Cancer Biology, Ljubljana (Slovenia)

    2012-05-01

    Cadmium is an ubiquitous environmental contaminant that represents hazard to humans and wildlife. It is found in the air, soil and water and, due to its extremely long half-life, accumulates in plants and animals. The main source of cadmium exposure for non-smoking human population is food. Cadmium is primarily toxic to the kidney, but has been also classified as carcinogenic to humans by several regulatory agencies. Current evidence suggests that exposure to cadmium induces genomic instability through complex and multifactorial mechanisms. Cadmium dose not induce direct DNA damage, however it induces increase in reactive oxygen species (ROS) formation, which in turn induce DNA damage and can also interfere with cell signalling. More important seems to be cadmium interaction with DNA repair mechanisms, cell cycle checkpoints and apoptosis as well as with epigenetic mechanisms of gene expression control. Cadmium mediated inhibition of DNA repair mechanisms and apoptosis leads to accumulation of cells with unrepaired DNA damage, which in turn increases the mutation rate and thus genomic instability. This increases the probability of developing not only cancer but also other diseases associated with genomic instability. In the in vitro experiments cadmium induced effects leading to genomic instability have been observed at low concentrations that were comparable to those observed in target organs and tissues of humans that were non-occupationally exposed to cadmium. Therefore, further studies aiming to clarify the relevance of these observations for human health risks due to cadmium exposure are needed.

  12. Facile preparation of carbon wrapped copper telluride nanowires as high performance anodes for sodium and lithium ion batteries

    Science.gov (United States)

    Yu, Hong; Yang, Jun; Geng, Hongbo; Chao Li, Cheng

    2017-04-01

    Uniform carbon wrapped copper telluride nanowires were successfully prepared by using an in situ conversion reaction. The length of these nanowires is up to several micrometers and the width is around 30–40 nm. The unique one dimensional structure and the presence of conformal carbon coating of copper telluride greatly accommodate the large volumetric changes during cycling, significantly increase the electrical conductivity and reduce charge transfer resistance. The copper telluride nanowires show promising performance in a lithium ion battery with a discharge capacity of 130.2 mA h g‑1 at a high current density of 6.0 A g‑1 (26.74 C) and a stable cycling performance of 673.3 mA h g‑1 during the 60th cycle at 100 mA g‑1. When evaluated as anode material for a sodium ion battery, the copper telluride nanowires deliver a reversible capacity of 68.1 mA h g‑1 at 1.0 A g‑1 (∼4.46 C) and have a high capacity retention of 177.5 mA h g‑1 during the 500th cycle at 100 mA g‑1.

  13. Bioaccumulation of cadmium by growing Zygosaccharomyces rouxii and Saccharomyces cerevisiae.

    Science.gov (United States)

    Li, Chunsheng; Jiang, Wei; Ma, Ning; Zhu, Yinglian; Dong, Xiaoyan; Wang, Dongfeng; Meng, Xianghong; Xu, Ying

    2014-03-01

    Bioaccumulation via growing cells is a potential technique for heavy metal removal from food materials. The cadmium bioaccumulation characteristics by growing Zygosaccharomyces rouxii and Saccharomyces cerevisiae were investigated. Z. rouxii displayed powerful cadmium removal ability at low cadmium concentrations, which mainly depended on the intracellular cadmium bioaccumulation. The percentage of intracellular cadmium bioaccumulation of both yeasts obviously decreased with the increase of initial biomass and cadmium concentrations. Low pH and elevated concentrations of zinc and copper significantly decreased the intracellular cadmium bioaccumulation of both yeasts but improved the cadmium tolerance and the cell-surface cadmium bioaccumulation of Z. rouxii. Cadmium removal of Z. rouxii was improved by zinc and copper conditionally. Z. rouxii that possessed more powerful cadmium tolerance and removal ability at low pH and high concentration of competing ions can be developed into a potential cadmium removal agent using in complex food environment in future.

  14. Cadmium content of plants as affected by soil cadmium concentration

    Energy Technology Data Exchange (ETDEWEB)

    Lehoczky, E. [Pannon Univ. of Agricultural Sciences, Keszthely (Hungary); Szabados, I.; Marth, P. [Plant Health and Soil Conservation Station, Higany (Hungary)

    1996-12-31

    Pot experiments were conducted in greenhouse conditions to study the effects of increasing cadmium (Cd) levels on biomass production and Cd contents in corn, (Zea mays L.), garlic (Allium sativum L.), and spinach (Spinacia oleracea L.). Plants were grown in two soil types: Eutric cambisol soil and A gleyic luvisol soil. Spinach proved to be the most sensitive to Cd treatments as its biomass considerably decreased with the increasing Cd levels. Cadmium contents of the three crops increased with increasing levels of Cd applications. Statistical differences were observed in the Cd contents of crops depending on soil type. With the same Cd rates, Cd tissue concentration of test plants grown in the strongly acidic Gleyic luvisol soil were many times higher than that of plants grown in a neutral Eutric cambisol soil. 14 refs., 4 tabs.

  15. Effect of In Situ Thermal Annealing Process on Structural, Optical and Electrical Properties of CdSCdTe Thin-Film Solar Cells Fabricated by Pulsed Laser Deposition

    Science.gov (United States)

    Al-mebir, Alaa Ayad Khedhair

    Cadmium Telluride has long been recognized as the second lowest- cost material after Si in the world photovoltaic market, specifically for thin-film solar cells. The two attractive properties of the CdTe are its nearly ideal band gap of ˜1.5 eV for single p-n junction photovoltaic and its high optical absorption coefficient up to 105 cm-1. Therefore, a thickness of ˜1 mum of CdTe can absorb up to 90% of the incident light. The key to high-performance thin film CdTe-based solar cells is controlling microstructure of the CdS/CdTe through obtaining high-quality crystalline CdTe thin films that have low density pinholes and other defects and form high-quality p-n heterojunction interfaces on the CdS or other window layers. Considering these, the relative high temperatures used for CdTe thick film growth may not be suitable in the thin film case due to lack of control in CdTe microstructure evolution. Therefore, development of low-temperature processes for CdTe thin film solar cells is important to achieving a precise control of the CdS/CdTe microstructure and optoelectronic properties. In addition, low temperatures provide benefits in wider selection of substrates especially those for low-cost, flexible solar cells applications. However, the CdS/CdTe solar cells based on thin CdTe films fabricated at low temperature have generally poor performance as a result of increased density of grain boundaries and defects. In order to address this issue, we have developed an in situ thermal annealing process (iTAP) immediately after the CdS/CdTe deposition using Pulsed laser deposition (PLD) at 200 °C and before the common ex situ CdCl2 annealing typically employed for optimization of the CdTe-based solar cells. A systematic study on the microstructure, optical and optoelectronic properties of CdS/CdTe solar cells processed under different iTAP conditions has been carried out. It has been found that these physical properties depend sensitively on the iTAP processing conditions

  16. Tolerance to cadmium and cadmium-binding ligands in Great Salt Lake brine shrimp (Artemia salina)

    Energy Technology Data Exchange (ETDEWEB)

    Jayasekara, S.; Drown, D.B.; Sharma, R.P.

    1986-02-01

    Information on the accumulation of cadmium in cytosolic proteins of Great Lake brine shrimp (Artemia salina) was obtained from animals collected directly from the lake and also from animal hatched and maintained in three sublethal concentrations of cadmium (0.5, 2.0, 5.0 ppm) in saltwater aquaria. Brine shrimp growth under these conditions was monitored by measuring body lengths during a 7-day exposure period. Heat-stable, cadmium-binding ligands were isolated and identified by Sephadex G-75 chromatography and atomic absorption spectrophotometry. Cadmium was found to be equally distributed between high and low molecular weight proteins in animals collected from the lake and the 0.5 ppm cadmium group. There was also a slight growth stimulation noted in the 0.5-pm group. Higher cadmium incorporation was noted in low molecular weight fractions with increasing cadmium concentration in the exposure media. Low molecular weight fractions were also found to have high uv absorption characteristics at 250 nm and low absorption at 280 nm. Molecular weight of the cadmium-binding ligands was found to be 11,000 as estimated by the gel filtration method. De novo synthesis of this protein was increased as a function of cadmium concentration in the media. However, slow accumulation of cadmium in other protein fractions was also noticed in higher cadmium exposure groups, suggesting the existence of possible tolerance mechanisms in brine shrimp exposed to suspected acute cadmium concentrations.

  17. Electrodialytic Removal of Cadmium from Straw Ash

    DEFF Research Database (Denmark)

    Hansen, Henrik; Ottosen, Lisbeth M.; Villumsen, Arne

    1999-01-01

    A problem with flyash from straw and wood combustion is the high level of heavy metals, especially cadmium. Two electrodialytic remediation experiments were carried out on cadmium polluted flyash from straw combustion. The flyash could be cleaned to 1/3 of its initial level after 24 days...... of remediation. Further removal of cadmium could be possible with longer remediation time or a higher current density...

  18. Zone refining of cadmium and related characterization

    Indian Academy of Sciences (India)

    N R Munirathnam; D S Prasad; Ch Sudheer; J V Rao; T L Prakash

    2005-06-01

    We present the zone refining results of cadmium using horizontal resistive zone refiner under constant flow of moisture free hydrogen gas. The boron impurity in cadmium can be avoided using quartz (GE 214 grade) boat in lieu of high pure graphite boat. The analytical results using inductively coupled plasma optical emission spectrometry (ICPOES) show that majority of the impurities are less than the detection limits. Comparatively, zinc is the most difficult impurity element to remove in cadmium matrix by zone refining.

  19. Cadmium Toxicity to Ringed Seals (Phoca hispida)

    DEFF Research Database (Denmark)

    Sonne, Christian; Dietz, R.; Riget, F. F.

    Cadmium concentrations in kidneys from ringed seals (Phoca hispida) from North West Greenland (Qaanaaq) are high. Concentrations range at level known to induce renal toxic effects (mainly tubulopathy) and demineralisation (osteopenia) of the skeletal system (Fanconi's Syndrome) in humans as well...... as laboratory mammals. We have studied possible cadmium induced histopathological changes in the kidneys as well as a demineralisation of the skeletal system (DXA-scanning of lumbal vertebraes). No obvious cadmium induced toxic changes were found. Food composition and physiological adaptations may explain...... the absence of toxic effects of cadmium in ringed seal...

  20. The Epigenetic Effects of Prenatal Cadmium Exposure.

    Science.gov (United States)

    Vilahur, Nadia; Vahter, Marie; Broberg, Karin

    2015-06-01

    Prenatal exposure to the highly toxic and common pollutant cadmium has been associated with adverse effects on child health and development. However, the underlying biological mechanisms of cadmium toxicity remain partially unsolved. Epigenetic disruption due to early cadmium exposure has gained attention as a plausible mode of action, since epigenetic signatures respond to environmental stimuli and the fetus undergoes drastic epigenomic rearrangements during embryogenesis. In the current review, we provide a critical examination of the literature addressing prenatal cadmium exposure and epigenetic effects in human, animal, and in vitro studies. We conducted a PubMed search and obtained eight recent studies addressing this topic, focusing almost exclusively on DNA methylation. These studies provide evidence that cadmium alters epigenetic signatures in the DNA of the placenta and of the newborns, and some studies indicated marked sexual differences for cadmium-related DNA methylation changes. Associations between early cadmium exposure and DNA methylation might reflect interference with de novo DNA methyltransferases. More studies, especially those including environmentally relevant doses, are needed to confirm the toxicoepigenomic effects of prenatal cadmium exposure and how that relates to the observed health effects of cadmium in childhood and later life.

  1. Cadmium and postmenopausal bone loss

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharyya, M.H.; Whelton, B.D.; Stern, P.H.; Peterson, D.P.; Moretti, E.S.; Dare, H.A.

    1987-01-01

    Neither ovariectomy alone nor dietary cadmium exposure alone caused statistically significant decreases in the mean calcium contents and calcium/dry weight ratios of the femurs and lumbar vertebrae. Exposure to 50 ppM dietary Cd caused a significant increase in the loss of bone calcium after ovariectomy such that the calcium contents and calcium to dry weight ratios of both femurs and lumbar vertebrae were strikingly lower than those of all other groups.

  2. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

    Science.gov (United States)

    Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  3. New Insights into High-Performance Thermoelectric Tellurides from ^125Te NMR Spectroscopy

    Science.gov (United States)

    Levin, E. M.; Hu, Y.-Y.; Cook, B. A.; Harringa, J. L.; Schmidt-Rohr, K.; Kanatzidis, M. G.

    2009-11-01

    Thermoelectric materials are widely used for direct transformation of heat to electricity (Seebeck effect) and for solid state refrigeration (Peltier effect). Efforts to increase the efficiency of high-performance thermoelectrics, which include narrow-gap, doped tellurium-based semiconductors, require detailed knowledge of their local structure and bonding. We have used ^125Te nuclear magnetic resonance (NMR) as a local probe for obtaining better understanding of these high-performance thermoelectric tellurides, specifically PbTe doped with Ag and Sb (LAST materials) and GeTe doped with Ag and Sb (TAGS materials). The resonance frequencies and line shapes of the NMR spectra, as well as spin-lattice relaxation times and chemical shift anisotropies are highly sensitive to the composition and synthesis conditions of LAST and TAGS materials, enabling studies of the local composition, distortion, bonding, and carrier concentration. Several intriguing phenomena including electronic inhomogeneity and local distortions of the crystal lattice have been observed by NMR.

  4. Role of Van der Waals interactions in determining the structure of liquid tellurides

    Science.gov (United States)

    Micoulaut, Matthieu; Flores-Ruiz, Hugo; Coulet, Vanessa; Piarristeguy, Andrea; Johnson, Mark; Cuello, Gabriel; Pradel, Annie

    The simulation of tellurides using standard density functional (DFT) theory based molecular dynamics usually leads to an overestimation of the bond distances and a noticeable mismatch between theory and experiments when e.g. structure functions are being directly compared. Here, the structural properties of several compositions of Ge-Te and Ge-Sb-Te liquids are studied from a combination of neutron diffraction and DFT-based molecular dynamics. Importantly, we find an excellent agreement in the reproduction of the structure in real and reciprocal spaces, resulting from the incorporation of dispersion forces in the simulation. We then investigate structural properties including structure factors, pair distribution functions, angular distributions, coordination numbers, neighbor distributions, and compare our results with experimental findings. References:Physical Review B 92, 134205 (2015)Physical Review B 89, 174205 (2014)Physical Review B 90, 094207 (2014) Support from Agence Nationale de la Recherche (ANR) (Grant No. ANR-11-BS08-0012) is gratefully acknowledged.

  5. Chemical pressure and hidden one-dimensional behavior in rare earth tri-telluride

    Energy Technology Data Exchange (ETDEWEB)

    Sacchetti, A.; Degiorgi, L.; /Zurich, ETH; Giamarchi, T.; /Geneva U.; Ru, N.; Fisher, I.R.; /Stanford U., Geballe Lab.

    2009-12-14

    We report on the first optical measurements of the rare-earth tri-telluride charge-density-wave systems. Our data, collected over an extremely broad spectral range, allow us to observe both the Drude component and the single-particle peak, ascribed to the contributions due to the free charge carriers and to the charge-density-wave gap excitation, respectively. The data analysis displays a diminishing impact of the charge-density-wave condensate on the electronic properties with decreasing lattice constant across the rare-earth series. We propose a possible mechanism describing this behavior and we suggest the presence of a one-dimensional character in these two-dimensional compounds. We also envisage that interactions and umklapp processes might play a relevant role in the formation of the charge-density-wave state in these compounds.

  6. Effects of spark plasma sintering conditions on the anisotropic thermoelectric properties of bismuth antimony telluride

    DEFF Research Database (Denmark)

    Han, Li; Hegelund Spangsdorf, Steeven; Van Nong, Ngo

    2016-01-01

    Bismuth antimony telluride (BixSb2-xTe3, 0.4 Sb1.6Te3 samples were prepared under various conditions (temperature, holding time, and ramp......-rate) using spark plasma sintering (SPS). The effects of SPS conditions on the anisotropic thermoelectric properties and microstructure evolutions were systematically investigated. The change of sintering temperature showed stronger influence than other sintering parameters to the resulting thermoelectric...... properties. Samples sintered over the temperature range between 653 K and 773 K showed significant differences in the degrees of orientations. The change was mainly caused by grain growth and re-orientation. Despite of the anisotropy, zT value as high as 1.2 to 1.3 was achieved over the temperature range...

  7. Preparation and Characterization of RF Magntron Sputtering CdTe Thin Film%CdTe薄膜的射频磁控溅射制备及表征

    Institute of Scientific and Technical Information of China (English)

    王波; 张静全; 王生浩; 冯良桓; 雷智; 武莉莉; 李卫; 黎兵; 曾广根

    2011-01-01

    The cadmium telluride thin film was deposited on glass substrate at room teperature by RF magnetron sputtering. The film was characterized to show the variation of its properties with the diverse deposition conditions by X-ray diffraction, UV-VIS spectrometer, scanning electrical microscope, etc. The result indicates that thc deposition speed increases with the increase of deposition power and decreases with the increase of pressure. As the pressure decreases, the CdTe film' s crystallinity gets worse. It is found that the cubic crystalline structure of deposited sample changes to the crystalline hexagonal CdTe phase as the power increased from 100 W to140 W. While the CdTe thin films is deposited under the pressure of 0.3 Pa, with the power of 100 W and at room temperature, the crystallinity is the best and the band gap is 1.45 eV.%采用射频磁控溅射技术制备了Cdre薄膜,使用探针式台阶仪、X射线衍射分析仪、紫外可见分光光度计、扫描电镜等表征了薄膜的厚度、结构、透过率、表面形貌等随溅射工艺的变化.结果表明:沉积速率随着功率的增加而增加,随气压的增加而呈线性减小;薄膜的结晶程度随气压增大而降低;功率从100W增大到180 W,出现了CdTe薄膜晶相从立方相向六方相的转变;当沉积条件为纯氩气氛、气压0.3Pa、功率100W、室温时,沉积的CdTe薄膜结晶性能最好.

  8. Improvement of cadmium phytoremediation after soil inoculation with a cadmium-resistant Micrococcus sp.

    Science.gov (United States)

    Sangthong, Chirawee; Setkit, Kunchaya; Prapagdee, Benjaphorn

    2016-01-01

    Cadmium-resistant Micrococcus sp. TISTR2221, a plant growth-promoting bacterium, has stimulatory effects on the root lengths of Zea mays L. seedlings under toxic cadmium conditions compared to uninoculated seedlings. The performance of Micrococcus sp. TISTR2221 on promoting growth and cadmium accumulation in Z. mays L. was investigated in a pot experiment. The results indicated that Micrococcus sp. TISTR2221significantly promoted the root length, shoot length, and dry biomass of Z. mays L. transplanted in both uncontaminated and cadmium-contaminated soils. Micrococcus sp. TISTR2221 significantly increased cadmium accumulation in the roots and shoots of Z. mays L. compared to uninoculated plants. At the beginning of the planting period, cadmium accumulated mainly in the shoots. With a prolonged duration of cultivation, cadmium content increased in the roots. As expected, little cadmium was found in maize grains. Soil cadmium was significantly reduced with time, and the highest percentage of cadmium removal was found in the bacterial-inoculated Z. mays L. after transplantation for 6 weeks. We conclude that Micrococcus sp. TISTR2221 is a potent bioaugmenting agent, facilitating cadmium phytoextraction in Z. mays L.

  9. Size distribution effects of cadmium tellurium quantum dots (CdS/CdTe) immunotoxicity on aquatic organisms.

    Science.gov (United States)

    Bruneau, A; Fortier, M; Gagne, F; Gagnon, C; Turcotte, P; Tayabali, A; Davis, T L; Auffret, M; Fournier, M

    2013-03-01

    The increasing use of products derived from nanotechnology has raised concern about their potential toxicity to aquatic life. This study sought to examine the comparative immunotoxicity of capped cadmium sulphide/cadmium telluride (CdS/CdTe) quantum dots (QDs) and possible impact of particle/aggregate size on two bivalves (Mytilus edulis and Elliptio complanata) and a fish (Oncorhynchus mykiss). The QDs were dispersed in sterile water and fractionated using a series of micro/ultrafiltration membranes of decreasing pore size: 450 nm, 100 nm, 50 nm, 25 nm, 100 kDa (6.8 nm), 30 kDa (4.6 nm), 10 kDa (3.2 nm) and 1 kDa (1.5 nm). The total concentrations of cadmium and tellurium were determined for the filtered material and for that retained on the filters (retentate). The immunotoxicity was determined by measuring cell viability and phagocytosis. Results revealed that nanoparticles retained on the ultrafilters had a higher Cd/Te ratio compared to the permeate fraction (ratio of 5 and 2 respectively) which could indicate that the CdS core was not associated with the permeable fraction of Cd. Our results demonstrate that the toxicity of CdS/CdTe QDs was concentration and size dependent. Large CdS/CdTe QD aggregates (25 nm < size < 100 nm) reduced phagocytosis more than did smaller nanoparticles (<25 nm). Moreover, our results revealed that the different species responded differently to these fractions. Mytilus edulis hemocytes were less sensitive to CdS/CdTe QDs than the Oncorhynchus mykiss macrophage and Elliptio complanata hemocytes.

  10. Immunocytotoxicity, cytogenotoxicity and genotoxicity of cadmium-based quantum dots in the marine mussel Mytilus galloprovincialis.

    Science.gov (United States)

    Rocha, Thiago Lopes; Gomes, Tânia; Cardoso, Cátia; Letendre, Julie; Pinheiro, José Paulo; Sousa, Vânia Serrão; Teixeira, Margarida Ribau; Bebianno, Maria João

    2014-10-01

    There is an increased use of Quantum Dot (QDs) in biological and biomedical applications, but little is known about their marine ecotoxicology. So, the aim of this study was to investigate the possible immunocytotoxic, cytogenotoxic and genotoxic effects of cadmium telluride QDs (CdTe QDs) on the marine mussel Mytilus galloprovincialis. Mussels were exposed to 10 μg L(-1) of CdTe QDs or to soluble Cd [Cd(NO3)2] for 14 days and Cd accumulation, immunocytotoxicity [hemocyte density, cell viability, lysosomal membrane stability (LMS), differential cell counts (DCC)], cytogenotoxicity (micronucleus test and nuclear abnormalities assay) and genotoxicity (comet assay) were analyzed. Results show that in vivo exposure to QDs, Cd is accumulated in mussel soft tissues and hemolymph and induce immunotoxic effects mediated by a decrease in LMS, changes in DCC, as well as genotoxicity (DNA damage). However, QDs do not induce significant changes in hemocytes density, cell viability and cytogenetic parameters in opposition to Cd(2+). Soluble Cd is the most cytotoxic and cytogenotoxic form on Mytilus hemocytes due to a higher accumulation of Cd in tissues. Results indicate that immunotoxicity and genotoxicity of CdTe QDs and Cd(2+) are mediated by different modes of action and show that Mytilus hemocytes are important targets for in vivo QDs toxicity.

  11. Cadmium and children : Exposure and health effects

    NARCIS (Netherlands)

    Schoeters, G.; Hond, E. Den; Zuurbier, M.; Naginiene, R.; Hazel, P.J. van den; Stilianakis, N.; Ronchetti, R.; Koppe, J.G.

    2006-01-01

    Cadmium exposure and accumulation in the body start at young age. Exposure routes in children are mainly via food, environmental tobacco smoke and house dust. Excretion from the body is limited. Cadmium accumulation in the kidney is responsible for effects such as nephrotoxicity and osteoporosis

  12. Cadmium and children: exposure and health effects.

    Science.gov (United States)

    Schoeters, Greet; Den Hond, Elly; Zuurbier, Moniek; Naginiene, Rima; van den Hazel, Peter; Stilianakis, Nikolaos; Ronchetti, Roberto; Koppe, Janna G

    2006-10-01

    Cadmium exposure and accumulation in the body start at young age. Exposure routes in children are mainly via food, environmental tobacco smoke and house dust. Excretion from the body is limited. Cadmium accumulation in the kidney is responsible for effects such as nephrotoxicity and osteoporosis which are observed at adult age. Cadmium exposure through inhalation is also associated with lung cancer in adulthood. Although transfer to the neonate through the placenta and through breast milk is limited, teratogenic and developmental effects were observed in experimental animals. The database on human studies involving children is limited, yet effects on motoric and perceptual behaviour in children have been associated with elevated in utero cadmium exposure. In school age children urinary cadmium levels were associated with immune suppressive effects. More studies are needed to confirm these results. Experimental data in vitro and in animals refer to effects of cadmium on the hypothalamus-pituitary axis at different levels. This may lead to disorders of the endocrine and/or immune system. Cadmium exposure at early age should be limited as much as possible to prevent direct effects on children and to prevent accumulation of cadmium which may have serious health effects only becoming manifest at older age.

  13. Cadmium and children : Exposure and health effects

    NARCIS (Netherlands)

    Schoeters, G.; Hond, E. Den; Zuurbier, M.; Naginiene, R.; Hazel, P.J. van den; Stilianakis, N.; Ronchetti, R.; Koppe, J.G.

    2006-01-01

    Cadmium exposure and accumulation in the body start at young age. Exposure routes in children are mainly via food, environmental tobacco smoke and house dust. Excretion from the body is limited. Cadmium accumulation in the kidney is responsible for effects such as nephrotoxicity and osteoporosis whi

  14. Bioavailability of cadmium from linseed and cocoa

    DEFF Research Database (Denmark)

    Hansen, Max; Rasmussen, Rie Romme; Sloth, Jens Jørgen

    2014-01-01

    The exposure of the European population to cadmium from food is high compared with the tolerable weekly intake of 2.5 μg/kg bodyweight set by EFSA in 2009. Only few studies on the bioavailability of cadmium from different food sources has been performed but this information in very important...... for the food authorities in order to give correct advises to the population. The aim of this study was to investigate the bioavailability of cadmium from whole linseed, crushed linseed, cocoa and cadmium chloride in rats. An experiment where 40 rats were divided into 4 groups and a control group and dosed...... with whole linseed, crushed linseed, cocoa and CdCl2 for 3 weeks was performed. Linseed or cocoa made up 10% of the feed (by weight) and was added as a replacement for carbohydrate source. The rats were dosed for 3 weeks and the cadmium content in the rats' kidneys was measured by ICPMS as a biomarker...

  15. Immunoassay for Cadmium Detection and Quantification

    Institute of Scientific and Technical Information of China (English)

    GONG-LIANG LIU; JU-FANG WANG; ZHI-YONG LI; SHI-ZHONG LIANG; XIAO-NING WANG

    2009-01-01

    Objective To detect cadmium in environmental and food samples by graphite furnace atomic absorption spectroscopy (GFAAS) and inductively coupled plasma atomic emission spectroscopy (ICPAES). Methods An indirect competitive enzyme-linked immunosorbent assay (IC-ELISA) was developed based on a cadmium-specific monoclonal antibody.IC-ELISA for cadmium in environmental and food samples was evaluated. Results IC-ELISA showed an IC50 of 45.6 μg/L with a detection limit of 1.95 μg/L for cadmium,and showed a mean recovery ranging 97.67%-107.08%.The coefficient of variations for intra- and iuterassay was 3.41%-6.61% and 4.70%-9.21%,respectively.The correlation coefficient between IC-ELISA and GFAAS was 0.998. Conclusion IC-ELISA can detect and quantify cadmium residue in environmental or food samples.

  16. Cadmium a metalloestrogen: are we convinced?

    Science.gov (United States)

    Silva, Nalinda; Peiris-John, Roshini; Wickremasinghe, Rajitha; Senanayake, Hemantha; Sathiakumar, Nalini

    2012-05-01

    Metalloestrogens are inorganic metal ions that bind to and activate oestrogen receptors. They are implicated in the aetiology of oestrogen-dependent diseases such as cancers of the breast and endometrium as well as endometriosis. Cadmium is one of the most studied metalloestrogens. In this review, scientific evidence for the oestrogenic effects of cadmium is critically evaluated to determine if there is sufficient evidence to support cadmium as an aetiological factor of oestrogen-dependent disease in humans. Results of the review indicated that, although the in vitro and in vivo evidence of the oestrogenic properties of cadmium was persuasive, evidence from population-based human studies remains conflicting. Considerable knowledge gaps exist on the potential oestrogenic effect of cadmium in humans. Research that focuses on bridging these knowledge gaps would be useful in preventing and managing oestrogen-dependent disease in humans.

  17. Cadmium mobility and accumulation in soils of the European Communities

    NARCIS (Netherlands)

    Fraters B; van Beurden AUCJ

    1993-01-01

    In this overview of the effects of cadmium pollution on agricultural soils in the European Community, both the cadmium loads on agricultural land and the soil sensitivity to cadmium accumulation have been estimated. Cadmium loads have been estimated separately for arable land and grassland. The

  18. Cadmium mobility and accumulation in soils of the European Communities

    NARCIS (Netherlands)

    Fraters B; van Beurden AUCJ

    1993-01-01

    In this overview of the effects of cadmium pollution on agricultural soils in the European Community, both the cadmium loads on agricultural land and the soil sensitivity to cadmium accumulation have been estimated. Cadmium loads have been estimated separately for arable land and grassland. The ef

  19. [Study on cadmium absorption in pumpkin by atomic absorption spectrophotometry].

    Science.gov (United States)

    Li, Zhen-Xia; Jing, Rui-Jun; Dong, Wei-Hua; Li, Xin-Zheng; Liu, Hong

    2006-08-01

    A study was carried out on the characteristic of cadmium absorption in pumpkin by atomic absorption spectrophotometer. The results show that the cadmium absorption amount in pumpkin increased with the increase in cadmium concentration. Meanwhile the cadmium absorption amount in pumpkin increased with time. Eight hours after being cultured in the liquid, the cadmium absorption amount became saturated. The cadmium absorption rate reached the peak after 2 hours, then the absorption rate gradually reduced. The cadmium absorption amount in pumpkin is less in acid or alkali compared with neutral condition. And the absorption amount became minimum in pH 3, while maximum in pH 7.

  20. Geology of the florencia gold – telluride deposit (camagüey, cuba) and some metallurgical considerations

    OpenAIRE

    López K Jesús M.; Moreira Jesús; Gandarillas José

    2011-01-01

    This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after b...

  1. Sealed nickel-cadmium battery

    Energy Technology Data Exchange (ETDEWEB)

    1989-08-15

    Overcharge protection, and especially the chargeability of a sealed Ni/Cd battery with high currents is improved by rolling a carbon-containing powdered material into the surface of the negative electrode, which material catalyzes the reduction of oxygen. Wetting of the electrode with a Tylose dispersion prior to application of the powder (by powdering, vibration or in an agitator) improves the adhesion of the powder. The cadmium electrode thus prepared combines in itself the functions of a negative principal electrode and of an auxiliary oxygen electrode.

  2. Roughness of CdTe thin films grown on glass by hot wall epitaxy.

    Science.gov (United States)

    Leal, F F; Ferreira, S O; Menezes-Sobrinho, I L; Faria, T E

    2005-01-12

    Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

  3. Semiconducting properties of layered cadmium sulphide-based hybrid nanocomposites

    Directory of Open Access Journals (Sweden)

    Sotomayor Torres Clivia

    2011-01-01

    Full Text Available Abstract A series of hybrid cadmium salt/cationic surfactant layered nanocomposites containing different concentrations of cadmium sulphide was prepared by exchanging chloride by sulphide ions in the layered precursor CdX x (OH y (CnTA z in a solid phase/gas reaction, resulting in a series of layered species exhibiting stoichiometries corresponding to CdS v X x (OH y (CnTA z , constituted by two-dimensional CdCl2/CdS ultra-thin sheets sandwiched between two self-assembled surfactant layers. The electronic structure of CdS in the nanocomposite is similar to that of bulk, but showing the expected features of two-dimensional confinement of the semiconductor. The nanocomposite band gap is found to depend in a non-linear manner on both the length of the hydrocarbon chain of the surfactant and the concentration of the sulphide in the inorganic sheet. The products show photocatalytic activity at least similar and usually better than that of "bulk" CdS in a factor of two.

  4. Topological phase transitions in thin films by tuning multivalley boundary-state couplings

    Science.gov (United States)

    Li, Xiao; Niu, Qian

    2017-06-01

    Dirac boundary states on opposite boundaries can overlap and interact owing to finite size effect. We propose that in a thin film system with symmetry-unrelated valleys, valley-contrasting couplings between Dirac boundary states can be exploited to design various two-dimensional topological quantum phases. Our first-principles calculations demonstrate the mechanism in tin telluride slab and nanoribbon array, respectively, by top-down and bottom-up material designs. Both two-dimensional topological crystalline insulator and quantum spin Hall insulator emerge in the same material system, which offers highly tunable quantum transport of edge channels with a set of quantized conductances.

  5. Response of Pleurotus ostreatus to cadmium exposure

    Energy Technology Data Exchange (ETDEWEB)

    Favero, N.; Bressa, G.; Costa, P. (Univ. of Padua (Italy))

    1990-08-01

    The possibility of utilizing agroindustrial wastes in the production of edible, high-quality products (e.g., mushrooms) implies the risk of bringing toxic substances, such as heavy metals, into the human food chain. Thus, growth in the presence of cadmium and cadmium accumulation limits have been studied in the industrially cultivated fungus P. ostreatus. Fruit body production is substantially unaffected in the presence of 25, 139, and 285 mg Cd/kg of dried substrate. Cadmium concentration in fruit bodies is related to cadmium substrate level, the metal being present at higher levels in caps (22-56 mg/kg dry wt) than in stems (13-36 mg/kg dry wt). Concentration factor (CF), very low in the controls (about 2), further decreases in treated specimens. The presence of a cadmium control mechanism in this fungi species is suggested. Fruit body cadmium levels could, however, represent a risk for P. ostreatus consumers, according to FAO/WHO limits related to weekly cadmium intake.

  6. Cadmium inhalation and male reproductive toxicity

    Energy Technology Data Exchange (ETDEWEB)

    Ragan, H.A.; Mast, T.J. (Battelle Pacific Northwest Laboratories, Richland, WA (USA))

    1990-01-01

    Cadmium is a highly toxic element that is cumulative and has a long biological half-life in mammals. The severe toxicity of cadmium in man has been known for more than 100 years. Despite the knowledge that cadmium is toxic, only 20 human cases of poisoning via ingestion were recorded prior to 1941, whereas in the ensuing five-year period more than 680 cases of cadmium poisonings from accidental oral ingestion of this metal were documented. Some of the recorded effects of exposure to cadmium in laboratory animals include renal tubular damage, placental and testicular necrosis, structural and functional liver damage, osteomalacia, testicular tumors, teratogenic malformations, anemia, hypertension, pulmonary edema, chronic pulmonary emphysema, and induced deficiencies of iron, copper, and zinc. Some of these effects have also been observed in human after accidental exposures to cadmium oxide fumes and are characteristic of the syndrome described in Japan as Itai Itai disease in which ingestion of cadmium is the inciting chemical.134 references.

  7. Interactions of cadmium and zinc during pregnancy

    Energy Technology Data Exchange (ETDEWEB)

    Sorell, T.L.

    1988-01-01

    The interactions of cadmium exposure and zinc during pregnancy were investigated by studying rats exposed to 0, 5, 50, or 100 ppm cadmium (as CdCl{sub 2}) in the drinking water from day 6 to day 20 of pregnancy. On day 20 of pregnancy, fetuses of rats exposed to 50 and 100 ppm of cadmium were slightly but significantly smaller than those of control animals. Fetal weight was negatively correlated with fetal cadmium concentration and positively correlated with fetal cadmium concentration. Significant fetal cadmium accumulation occurred in both the 50 and 100 ppm cadmium exposure groups; fetal zinc concentrations were decreased. Maternal liver and kidney zinc concentrations were slightly elevated, and the possible role of maternal organ sequestration of available zinc is discussed. The activity of two zinc metalloenzymes, alkaline phosphatase and {delta}-aminolevulinic acid dehydratase, was decreased in maternal and fetal tissues, providing evidence of an alteration in zinc metabolism. In addition, the placental transport of {sup 65}Zn was characterized in control animals and compared to exposed groups; placental zinc transport was significantly decreased in the 50 and 100 ppm exposure groups.

  8. Response of Saccharomyces cerevisiae to cadmium stress

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Luciana Mara Costa; Ribeiro, Frederico Haddad; Neves, Maria Jose [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil). Lab. de Radiobiologia], e-mail: luamatu@uol.com.br; Porto, Barbara Abranches Araujo; Amaral, Angela M.; Menezes, Maria Angela B.C. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Lab. de Ativacao Neutronica], e-mail: menezes@cdtn.br; Rosa, Carlos Augusto [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Microbiologia], e-mail: carlrosa@icb.ufmg

    2009-07-01

    The intensification of industrial activity has been greatly contributing with the increase of heavy metals in the environment. Among these heavy metals, cadmium becomes a serious pervasive environmental pollutant. The cadmium is a heavy metal with no biological function, very toxic and carcinogenic at low concentrations. The toxicity of cadmium and several other metals can be mainly attributed to the multiplicity of coordination complexes and clusters that they can form. Some aspects of the cellular response to cadmium were extensively investigated in the yeast Saccharomyces cerevisiae. The primary site of interaction between many toxic metals and microbial cells is the plasma membrane. Plasma-membrane permeabilisation has been reported in a variety of microorganisms following cadmium exposure, and is considered one mechanism of cadmium toxicity in the yeast. In this work, using the yeast strain S. cerevisiae W303-WT, we have investigated the relationships between Cd uptake and release of cellular metal ions (K{sup +} and Na{sup +}) using neutron activation technique. The neutron activation was an easy, rapid and suitable technique for doing these metal determinations on yeast cells; was observed the change in morphology of the strains during the process of Cd accumulation, these alterations were observed by Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM) during incorporation of cadmium. (author)

  9. [Association between cadmium and breast cancer].

    Science.gov (United States)

    Strumylaite, Loreta; Bogusevicius, Algirdas; Ryselis, Stanislovas; Pranys, Darius; Poskiene, Lina; Kregzdyte, Rima; Abdrachmanovas, Olegas; Asadauskaite, Rūta

    2008-01-01

    Cadmium is a known human lung carcinogen, although some studies indicate a link between cadmium exposure and human breast cancer. The objective of this study was to assess cadmium concentration in breast tissue samples of patients with breast cancer and benign breast tumor. MATERIAL AND METHODS. The concentration of cadmium was determined in breast tissue samples of 21 breast cancer and 19 benign tumor patients. Two samples of breast tissue from each patient, i.e. tumor and normal tissue close to tumor, were taken for the analysis. Cadmium was determined by atomic absorption spectrometry (Perkin-Elmer, Zeeman 3030). RESULTS. In patients with breast cancer, the mean cadmium concentration was 33.1 ng/g (95% CI, 21.9-44.4) in malignant breast tissue and 10.4 ng/g (95% CI, 5.6-15.2) in normal breast tissue (P=0.002). In patients with benign tumor, the corresponding values were 17.5 ng/g (95% CI, 8.4-26.5) and 11.8 ng/g (95% CI, 5.1-18.5) (P=0.3144). There was a statistically significant difference in cadmium concentration between malignant and benign breast tissues (P=0.009). CONCLUSION. The data obtained show that cadmium concentration is significantly higher in malignant breast tissue as compared with normal breast tissue of the same women or benign breast tissue. Further studies are necessary to determine the association between cadmium concentration in malignant breast tissue and estrogen receptor level, and smoking.

  10. Biochemical Effects of Cadmium Exposure and the Potential Pharmacologic Significance of Cadmium Mediated Hydrolase Inhibition

    Science.gov (United States)

    1997-04-18

    increase Cd absorption from the intestines (Larson and Piscator 1971; Itokawa, Abe et al. 197 4; Pond and Walker 1975). Pyridoxine, vitamin B 6 , is...considerations on uptake and retention of cadmium in human kidney cortex. Cadmium in the Environment. L. Friberg, M. Piscator and G. F. Nordberg. Cleveland...Columbia, Missouri, University of Missouri. Larson, S.-E. and M. Piscator (1971). "Effect of cadmium on skeletal tissue in normal and calcium

  11. Cadmium Toxicity to Ringed Seals (Phoca hispida)

    DEFF Research Database (Denmark)

    Sonne, Christian; Dietz, R.; Riget, F. F.;

    as laboratory mammals. We have studied possible cadmium induced histopathological changes in the kidneys as well as a demineralisation of the skeletal system (DXA-scanning of lumbal vertebraes). No obvious cadmium induced toxic changes were found. Food composition and physiological adaptations may explain......Cadmium concentrations in kidneys from ringed seals (Phoca hispida) from North West Greenland (Qaanaaq) are high. Concentrations range at level known to induce renal toxic effects (mainly tubulopathy) and demineralisation (osteopenia) of the skeletal system (Fanconi's Syndrome) in humans as well...

  12. 2D X-ray and FTIR micro-analysis of the degradation of cadmium yellow pigment in paintings of Henri Matisse

    Energy Technology Data Exchange (ETDEWEB)

    Pouyet, E. [European Synchrotron Radiation Facility, Grenoble (France); ARC-Nucleart - CEA/Grenoble, Grenoble Cedex 9 (France); Cotte, M. [European Synchrotron Radiation Facility, Grenoble (France); LAMS (Laboratoire d' Archeologie Moleculaire et Structurale) UMR-8220, Ivry-sur-Seine (France); Fayard, B.; Salome, M.; Kieffer, J.; Burghammer, M.; Sette, F. [European Synchrotron Radiation Facility, Grenoble (France); Meirer, F. [Utrecht University, Inorganic Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht (Netherlands); Mehta, A. [SLAC National Accelerator Laboratory, Stanford Synchrotron radiation Lightsource, Menlo Park, CA (United States); Uffelman, E.S. [Washington and Lee University, Department of Chemistry and Biochemistry, Lexington, VA (United States); Hull, A. [University of Delaware, Department of Chemistry and Biochemistry, Newark, DE (United States); Vanmeert, F.; Janssens, K. [University of Antwerp, AXES Research Group, Department of Chemistry, Antwerp (Belgium); Mass, J. [Winterthur Museum, Scientific Research and Analysis Laboratory, Conservation Department, Winterthur, DE (United States)

    2015-11-15

    The chemical and physical alterations of cadmium yellow (CdS) paints in Henri Matisse's The Joy of Life (1905-1906, The Barnes Foundation) have been recognized since 2006, when a survey by portable X-ray fluorescence identified this pigment in all altered regions of the monumental painting. This alteration is visible as fading, discoloration, chalking, flaking, and spalling of several regions of light to medium yellow paint. Since that time, synchrotron radiation-based techniques including elemental and spectroscopic imaging, as well as X-ray scattering have been employed to locate and identify the alteration products observed in this and related works by Henri Matisse. This information is necessary to formulate one or multiple mechanisms for degradation of Matisse's paints from this period, and thus ensure proper environmental conditions for the storage and the display of his works. This paper focuses on 2D full-field X-ray Near Edge Structure imaging, 2D micro-X-ray Diffraction, X-ray Fluorescence, and Fourier Transform Infra-red imaging of the altered paint layers to address one of the long-standing questions about cadmium yellow alteration - the roles of cadmium carbonates and cadmium sulphates found in the altered paint layers. These compounds have often been assumed to be photo-oxidation products, but could also be residual starting reagents from an indirect wet process synthesis of CdS. The data presented here allow identifying and mapping the location of cadmium carbonates, cadmium chlorides, cadmium oxalates, cadmium sulphates, and cadmium sulphides in thin sections of altered cadmium yellow paints from The Joy of Life and Matisse's Flower Piece (1906, The Barnes Foundation). Distribution of various cadmium compounds confirms that cadmium carbonates and sulphates are photo-degradation products in The Joy of Life, whereas in Flower Piece, cadmium carbonates appear to have been a [(partially) unreacted] starting reagent for the yellow paint, a

  13. Multi-stage uplift of the Rocky Mountains: new age constraints on the Telluride Conglomerate and regional compilation of apatite fission track ages

    Science.gov (United States)

    Donahue, M. S.; Karlstrom, K. E.; Gonzales, D. A.; Pecha, M.; McKeon, R. E.

    2011-12-01

    The Telluride Conglomerate, exposed on the western flanks of Oligocene caldera complexes of the San Juan Mountains of Colorado, has historically been considered an Eocene alluvial deposit overlying the "Rocky Mountain erosion surface" and pre-dating Oligocene volcanism. Measured sections show that the Telluride preserves an unroofing sequence with basal units dominated by Paleozoic sedimentary clasts transitioning into upper units dominated by locally derived Proterozoic basement mixed with previously unrecognized andesitic Oligocene volcanics. Paleoflow directions and thicknesses of the preserved unit indicate the Telluride Conglomerate was deposited by a large, high-energy WNW- flowing braided river system. Detrital zircon analysis indicates minimum ages for individual grains within the Telluride Conglomerate of 28.0 to 31.5 Ma. This, plus the entrained volcanic clasts, redefines the unit as being of Oligocene age and indicates that conglomeratic deposition overlapped with regional San Juan volcanism and just predated major caldera eruptions at 28.4 Ma (San Juan and Uncompahgre) and 27.6 Ma (Silverton). We interpret the deposition of the Telluride Conglomerate to be the depositional response to regional uplift and erosion related to early stages of San Juan magmatism. These units have undergone significant post-depositional tectonism: the Telluride Conglomerate is found at ~9,000ft elevation near Telluride, CO, but is at ~13,000' at its westernmost exposure at Mt. Wilson. We attribute this differential uplift to be associated with faulting, pluton emplacement, and additional mantle driven uplift associated with the emplacement and cooling of the Wilson Stock in the last 20-22 Ma as documented by Miocene cooling seen in apatite helium (AHe) ages. This cooling fits into our regional compilation of published apatite fission track (AFT) and AHe data showing temporally and spatially partitioned Cenozoic cooling indicative of multistage uplift of the Rocky Mountain

  14. The behaviour of Gd in lead and tin tellurides and its effect on their physical properties

    Science.gov (United States)

    Zayachuk, D. M.; Matulenis, E. L.; Mikityuk, V. I.

    1992-06-01

    The behaviour of gadolinium in Pb 1- xSn xTe (0 ⩽ x ⩽ 0.3) introduced during Bridgman growth and its effect on the composition profiles and free carrier concentration is investigated. The Gd, Pb, Sn and Te contents in crystals were determined by electron microprobe analysis, and the free carrier concentration was obtained by Hall measurements. The results indicate that Gd behaves like an impurity with a segregation coefficient larger than unity, which strongly depends on the Gd concentration N( L) Gd in the melt and is given by KS = 1 + Aexp( - BN( L) Gd), where A takes values of 8 or 9 and B a value of about 10 -20 cm 3. The effect of such a strong KS( N( L) Gd) dependence is that all the Gd impurity concentrates in the first-to-freeze section, leaving the rest of the ingot free from the impurity. Thus, by introducing Gd during melt growth of lead-tin telluride crystals, one can obtain high quality crystals of the solid solutions studied.

  15. Influence of the Ion Coordination Number on Cation Exchange Reactions with Copper Telluride Nanocrystals

    CERN Document Server

    Tu, Renyong; Bertoni, Giovanni; Lak, Aidin; Gaspari, Roberto; Rapallo, Arnaldo; Cavalli, Andrea; De Trizio, Luca; Manna, Liberato

    2016-01-01

    Cu2-xTe nanocubes were used as starting seeds to access metal telluride nanocrystals by cation exchanges at room temperature. The coordination number of the entering cations was found to play an important role in dictating the reaction pathways. The exchanges with tetrahedrally coordinated cations (i.e. with coordination number 4), such as Cd2+ or Hg2+, yielded monocrystalline CdTe or HgTe nanocrystals with Cu2-xTe/CdTe or Cu2-xTe/HgTe Janus-like heterostructures as intermediates. The formation of Janus-like architectures was attributed to the high diffusion rate of the relatively small tetrahedrally coordinated cations, which could rapidly diffuse in the Cu2-xTe NCs and nucleate the CdTe (or HgTe) phase in a preferred region of the host structure. Also, with both Cd2+ and Hg2+ ions the exchange led to wurtzite CdTe and HgTe phases rather than the more stable zinc-blende ones, indicating that the anion framework of the starting Cu2- xTe particles could be more easily deformed to match the anion framework of t...

  16. Resonant Enhancement of Charge Density Wave Diffraction in the Rare-Earth Tri-Tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Lee, W.S.; Sorini, A.P.; Yi, M.; Chuang, Y.D.; Moritz, B.; Yang, W.L.; Chu, J.-H.; Kuo, H.H.; Gonzalez, A.G.Cruz; Fisher, I.R.; Hussain, Z.; Devereau, T.P.; Shen, Z.X.

    2012-05-15

    We performed resonant soft X-ray diffraction on known charge density wave (CDW) compounds, rare earth tri-tellurides. Near the M{sub 5} (3d - 4f) absorption edge of rare earth ions, an intense diffraction peak is detected at a wavevector identical to that of CDW state hosted on Te{sub 2} planes, indicating a CDW-induced modulation on the rare earth ions. Surprisingly, the temperature dependence of the diffraction peak intensity demonstrates an exponential increase at low temperatures, vastly different than that of the CDW order parameter. Assuming 4f multiplet splitting due to the CDW states, we present a model to calculate X-ray absorption spectrum and resonant profile of the diffraction peak, agreeing well with experimental observations. Our results demonstrate a situation where the temperature dependence of resonant X-ray diffraction peak intensity is not directly related to the intrinsic behavior of the order parameter associated with the electronic order, but is dominated by the thermal occupancy of the valence states.

  17. Near-infrared photodetectors based on mercury indium telluride single crystals

    Science.gov (United States)

    Zhang, Xiaolei; Sun, Weiguo; Lu, Zhengxiong; Zhang, Liang; Zhao, Lan; Ding, JiaXin; Yan, Guoqing

    2008-03-01

    Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details of oxidation process, Schottky diodes, as well as the photodetectors fabrication and characterizations are discussed.

  18. Semiconductor nanocrystals functionalized with antimony telluride zintl ions for nanostructured thermoelectrics.

    Science.gov (United States)

    Kovalenko, Maksym V; Spokoyny, Boris; Lee, Jong-Soo; Scheele, Marcus; Weber, Andrew; Perera, Susanthri; Landry, Daniel; Talapin, Dmitri V

    2010-05-19

    The energy efficiency of heat engines could be improved by the partial recovery of waste heat using thermoelectric (TE) generators. We show the possibility of designing nanostructured TE materials using colloidal inorganic nanocrystals functionalized with molecular antimony telluride complexes belonging to the family of Zintl ions. The unique advantage of using Zintl ions as the nanocrystal surface ligands is the possibility to convert them into crystalline metal chalcogenides, thus linking individual nanobuilding blocks into a macroscopic assembly of electronically coupled functional modules. This approach allows preserving the benefits of nanostructuring and quantum confinement while enabling facile charge transport through the interparticle boundaries. A developed methodology was applied for solution-based fabrication of nanostructured n- and p-type Bi(2-x)Sb(x)Te(3) alloys with tunable composition and PbTe-Sb(2)Te(3) nanocomposites with controlled grain size. Characterization of the TE properties of these materials showed that their Seebeck coefficients, electrical and thermal conductivities, and ZT values compared favorably with those of previously reported solution-processed TE materials.

  19. Synthesis and characterization of bismuth telluride based nanostructured thermoelectric composite materials

    Science.gov (United States)

    Keshavarz Khorasgani, Mohsen

    Thermoelectric (TE) materials and devices are attractive in solid-state energy conversion applications such as waste heat recovery, air-conditioning, and refrigeration. Since the 1950's lots of unremitting efforts have been made to enhance the efficiency of energy conversion in TE materials (i. e. improving the figure of merit (ZT)), however, most of commercial bulk TE materials still suffer from low efficiency with ZTs around unity. To enhance the performance of bismuth telluride based TE alloys, we have developed composite TE materials, based on the idea that introducing more engineered interfaces in the bulk TE materials may lead to thermal conductivity reduction due to increased phonon scattering by these interfaces. In this approach it is expected that the electronic transport properties of the material are not effectively affected. Consequently, ZT enhancement can be achieved. In this dissertation we will discuss synthesis and characterization of two types of bismuth telluride based bulk composite TE materials. The first type is engineered to contain the presence of coherent interfaces between phases in the material resulting from different mixtures of totally miscible compounds with similar composition. The second type includes the nanocomposites with embedded foreign nano-particles in which the matrix and the particles are delimited by incoherent interfaces. The synthesis procedure, micro- and nano-structures as well as thermoelectric properties of these composites will be presented. In our study on the composites with coherent interfaces, we produced a series of different composites of p-type bismuth antimony telluride alloys and studied their microstructure and thermoelectric properties. Each composite consists of two phases that were obtained in powder form by mechanical alloying. Mixed powders in various proportions of the two different phases were consolidated by hot extrusion to obtain each bulk composite. The minimum grain size of bulk composites as

  20. Friction Consolidation Processing of n-Type Bismuth-Telluride Thermoelectric Material

    Energy Technology Data Exchange (ETDEWEB)

    Whalen, Scott A.; Jana, Saumyadeep; Catalini, David; Overman, Nicole R.; Sharp, Jeffrey

    2016-04-13

    This work focused on the development of a new mechanical processing route, called Friction Consolidation Processing (FCP), for densifying bismuth-telluride (Bi2Te3) powders into bulk form. FCP is a solid-state process wherein a rotating tool was used to generate severe plastic deformation within the Bi2Te3 powder, resulting in a recrystallizing flow of material. Upon cooling, the non-equilibrium microstructure within the flow was locked into the material. FCP was demonstrated on -325 mesh (~44 micron) n-type Bi2Te3 feedstock powder to form pucks with 92% theoretical density having a diameter of 25.4mm and thickness of 4.2mm. FCP was shown to achieve highly textured bulk materials, with sub-micron grain size, directly from coarse particle feedstock powders in a single process. An average grain size of 0.8 microns was determined for one sample and a multiple of uniform distribution (MUD) value of 15.49 was calculated for the (0001) pole figure from another sample. These results indicate that FCP can yield highly refined grains and textural alignment of the (0001) basal planes in Bi2Te3. ZT=0.37 at 336K was achieved for undoped stoichiometric Bi2Te3, which is near the “text book” value of ZT=0.5.

  1. Atomic ordering in cubic bismuth telluride alloy phases at high pressure

    Science.gov (United States)

    Loa, I.; Bos, J.-W. G.; Downie, R. A.; Syassen, K.

    2016-06-01

    Pressure-induced transitions from ordered intermetallic phases to substitutional alloys to semi-ordered phases were studied in a series of bismuth tellurides. By using angle-dispersive x-ray diffraction, the compounds Bi4Te5 , BiTe, and Bi2Te were observed to form alloys with the disordered body-centered cubic (bcc) crystal structure upon compression to above 14-19 GPa at room temperature. The BiTe and Bi2Te alloys and the previously discovered high-pressure alloys of Bi2Te3 and Bi4Te3 were all found to show atomic ordering after gentle annealing at very moderate temperatures of ˜100 ∘C . Upon annealing, BiTe transforms from bcc to the B2 (CsCl) crystal-structure type, and the other phases adopt semi-disordered variants thereof, featuring substitutional disorder on one of the two crystallographic sites. The transition pressures and atomic volumes of the alloy phases show systematic variations across the BimTen series including the end members Bi and Te. First-principles calculations were performed to characterize the electronic structure and chemical bonding properties of B2-type BiTe and to identify the driving forces of the ordering transition. The calculated Fermi surface of B2-type BiTe has an intricate structure and is predicted to undergo three topological changes between 20 and 60 GPa.

  2. Nanostructure Characterization of Bismuth Telluride-Based Powders and Extruded Alloys by Various Experimental Methods

    Science.gov (United States)

    Vasilevskiy, D.; Bourbia, O.; Gosselin, S.; Turenne, S.; Masut, R. A.

    2011-05-01

    High-resolution transmission electron microscopy (HRTEM) observations of mechanically alloyed powders and bulk extruded alloys give experimental evidence of nanosized grains in bismuth telluride-based materials. In this study we combine HRTEM observations and x-ray diffraction (XRD) measurements, of both mechanically alloyed powders and extruded samples, with mechanical spectroscopy (MS) of extruded rods. Both HRTEM and XRD show that nanostructures with an average grain size near 25 nm can be achieved within 2 h of mechanical alloying from pure elements in an attritor-type milling machine. Residual strain orthogonal to the c-axis of powder nanoparticles has been evaluated at about 1.2% by XRD peak broadening. In contrast, XRD has been found unreliable for evaluation of grain size in highly textured extruded materials for which diffraction conditions are similar to those of single crystals, while MS appears promising for study of bulk extruded samples. Nanostructured extruded alloys at room temperature exhibit an internal friction (IF) background that is one order of magnitude higher than that of conventional zone-melted material with a grain size of several millimeters. IF as a function of sample temperature gives activation energies that are also different between bulk materials having nano- and millimeter-size grains, a result that is attributed to different creep mechanisms. Nanograin size, as well as orientation and volumetric proportion, provide valuable information for optimization of technological parameters of thermoelectric alloys and should be carefully cross-examined by various independent methods.

  3. REMOVAL OF CADMIUM FROM AQUEOUS SOLUTION USING ...

    African Journals Online (AJOL)

    been identified as the best products [4]. Though little work has ... synthesized products for the removal of cadmium ion from aqueous solution. ... absence of suspect anions such as nitrate and chloride from the reagents used, which could be.

  4. RISK ASSESSMENT AND MANAGEMENT OF ENVIRONMENTAL CADMIUM

    Science.gov (United States)

    Cadmium consumed in foods grown on soils contaminated by industrial Cd+Zn discharge has caused renal tubular dysfunction in exposed humans in discrete situations. However, lack of understanding about environmental Cd has caused wide concern that generalpopulations may...

  5. Market for nickel-cadmium batteries

    Science.gov (United States)

    Putois, F.

    Besides the lead/acid battery market, which has seen a tremendous development linked with the car industry, the alkaline rechargeable battery market has also been expanded for more than twenty years, especially in the field of portable applications with nickel-cadmium batteries. Today, nickel-cadmium batteries have to face newcomers on the market, such as nickel-metal hydride, which is another alkaline couple, and rechargeable lithium batteries; these new battery systems have better performances in some areas. This work illustrates the status of the market for nickel-cadmium batteries and their applications. Also, for two major applications—the cordless tool and the electric vehicles—the competitive situation of nickel-cadmium batteries; facing new systems such as nickel-metal hydride and lithium ion cells are discussed.

  6. Some Aspects of Sealed Nickel Cadmium Cells

    Directory of Open Access Journals (Sweden)

    P. K. Saha

    1967-11-01

    Full Text Available Sealed Nickel Cadmium Cell system is termed till today as the most reliable power pack for electronic apparatus specially in low temperature use. This paper brings out the development and production of sealed nickel cadmium cells of pocket plate construction. The author who has gained experience in production of Ni-Cd cells in East Germany discusses also the major problems faced by the battery manufactures of to-day.

  7. Screening micro-organisms for cadmium absorption from aqueous solution and cadmium absorption properties of Arthrobacter nicotianae.

    Science.gov (United States)

    Tsuruta, Takehiko; Umenai, Daishi; Hatano, Tomonobu; Hirajima, Tsuyoshi; Sasaki, Keiko

    2014-01-01

    To obtain basic information on how microbial cells absorb cadmium from aqueous solution, we examined cadmium absorption in various micro-organisms. Of 51 micro-organism strains tested, we found that some Gram-positive bacteria, such as, Arthrobacter nicotianae and Bacillus subtilis, and some actinomycetes, such as, Streptomyces flavoviridis and S. levoris were highly capable of absorbing cadmium from an aqueous solution. A. nicotianae absorbed the largest amount of cadmium, over 800 μmol cadmium per gram of dry wt. cells. However, cadmium absorption by A. nicotianae was affected by the solution pH, cadmium concentration, and cell density. The absorption of cadmium was very rapid. Some factors that affected cadmium absorption by A. nicotianae cells were also discussed.

  8. Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Teng, E-mail: zhangteng@mail.iee.ac.cn; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste.

  9. Pre-chemotherapy values for left and right ventricular volumes and ejection fraction by gated tomographic radionuclide angiography using a cadmium-zinc-telluride detector gamma camera

    DEFF Research Database (Denmark)

    Haarmark, Christian; Haase, Christine; Jensen, Maria Maj

    2016-01-01

    BACKGROUND: Estimation of left ventricular ejection fraction (LVEF) using equilibrium radionuclide angiography is an established method for assessment of left ventricular function. The purpose of this study was to establish normative data on left and right ventricular volumes and ejection fractio...

  10. Interstudy repeatability of left and right ventricular volume estimations by serial-gated tomographic radionuclide angiographies using a cadmium-zinc-telluride detector gamma camera

    DEFF Research Database (Denmark)

    Jensen, Maria Maj; Haase, Christine; Zerahn, Bo

    2015-01-01

    ·3% (-6·90 to 5·20) and 7·0% (-13·9 to 11·1), respectively. For the right ventricle, the corresponding values were 11·9% (-9·40 to 10·8), 9·8% (-14·9 to 10·8) and 8·1% (-20·7 to 16·3). DISCUSSION: The CZT detector camera has excellent reproducibility with regard to interstudy variation when assessing LV...

  11. Ligand exchange on the surface of cadmium telluride quantum dots with fluorosurfactant-capped gold nanoparticles: synthesis, characterization and toxicity evaluation.

    Science.gov (United States)

    Wang, Lingyun; Zhang, Hongxia; Lu, Chao; Zhao, Lixia

    2014-01-01

    CdTe quantum dots (QDs) can provide high-intensity and photostable luminescent signals when they are used as labeling materials for sensing trace amounts of bioanalytes. However, a major concern is whether the capping ligands of CdTe QDs cause toxic effects in living systems. In the current study, we address this problem through the complete ligand transformation of CdTe QDs from toxic thiolglycolic acid (TGA) to green citrate, which is attributed to the Cd-S bond breaking and the Au-S bond formation. The highly efficient depletion of S atom from the surface of the CdTe QDs occurs after the addition of fluorosurfactant (FSN)-capped gold nanoparticles into TGA-capped CdTe QDs, accompanying with the rapid aggregation of FSN-capped gold nanoparticles via noncrosslinking mechanism in the presence of high salt. After the ligand transformation, negligible differences are observed on both photoluminescence spectra and luminescent quantum yield. In addition, the cytotoxicity of the original and new-born CdTe QDs is detected by measuring cell viability after the nanoparticle treatment. In comparison with the original TGA-capped QDs, the new-born CdTe QDs can induce minimal cytotoxicity against human hepatocellular liver carcinoma (HepG2) cells even at high dosages. Our study indicates that the extremely simple method herein opens up novel pathways for the synthesis of green CdTe QDs, and the as-prepared citrate-capped CdTe QDs might have great potential for biological labeling and imaging applications.

  12. Module process optimization and device efficiency improvement for stable, low-cost, large-area, cadmium telluride-based photovoltaic module production

    Energy Technology Data Exchange (ETDEWEB)

    Albright, S.P.; Ackerman, B.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (United States))

    1992-04-01

    This report describes work under a three-year phased subcontract to develop CdS/CdTe devices and modules and to further improve the technology base at Photon Energy, Inc. (PEI) to better address the commercialization issues and objectives of the PEI and the US Department of Energy. During this reporting period we (1) achieved efficiencies of 12.7% on small area devices, (2) achieved 1-ft{sup 2} modules with over 8% aperture-area efficiency (and active area efficiencies up to {approximately}10%), (3) tested 4-ft{sup 2} modules at NREL at 23.1 (21.3) watts, normalized (6.3% efficiency), and (4) found no inherent stability problems with CdTe technology during life testing, at both NREL and PEI. 7 refs.

  13. Proceedings of U. S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials, Held in Danvers, Massachusetts on October 13 - 15, 1992

    Science.gov (United States)

    1992-10-15

    either 200-C (254-1, -4) or 240-250"C, and CdTe thickness ranged between 1400-3000A. Growth and Characterization of Hot-Wall Epitaxial CdTe on (111...AR. was used Theore~tical Profile iWith interdiflusion as a measure of CdTe thickness . Qualitative monitor- Theoreicl Piofile (without nterdit.us.on...HgCdTe active Fig. 8 Measures of CdTe thickness (ARR) and HgTe growth rate (\\t) layer is equally valid here. The only difference be- during one IMP period

  14. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Related II-VI Compounds Held in San Diego, California on October 3, 4, 5, 1989

    Science.gov (United States)

    1989-11-01

    particular the noise factor. In the measured frequency range, at 77K, the noise current is modeled using the expresion : 1/2 (1) In1 where I,. Is the noise...DARPA contract no. N00014-86-C-2389 (Option) The authors prefer an oral presentation. IV -20 IV - 21 MBE GROWTH OF HgCdTe HETEROSTRUCTURES R.J.Koestner

  15. New CZT cardiac cameras and myocardial perfusion imaging with thallium 201; Nouvelles cameras cardiaques a semi-conducteur cadmium -zinc- telluride (CZT) et scintigraphies myocardiques au thallium 201

    Energy Technology Data Exchange (ETDEWEB)

    Songy, B. [Service de medecine et imagerie nucleaire, centre cardiologique du Nord (CCN), 93 - Saint-Denis (France)

    2010-08-15

    Myocardial perfusion imaging is widely used for management of coronary artery disease. However, it suffers from technical limitations. New cardiac cameras using CZT detectors are now available and increase spatial (x2) and energy (x2) resolutions and photons sensitivity (x5). We describe here the General Electric Discovery NM 530c new camera and summarize the validation studies with technetium agents and with thallium 201, protocols to reduce doses, ultrafast protocols and perspectives offered with this new technology. (author)

  16. Cadmium exposure and breast cancer risk.

    Science.gov (United States)

    McElroy, Jane A; Shafer, Martin M; Trentham-Dietz, Amy; Hampton, John M; Newcomb, Polly A

    2006-06-21

    Cadmium, a highly persistent heavy metal, has been categorized as a probable human carcinogen by the U.S. Environmental Protection Agency. Primary exposure sources include food and tobacco smoke. We carried out a population-based case-control study of 246 women, aged 20-69 years, with breast cancer and 254 age-matched control subjects. We measured cadmium levels in urine samples by inductively coupled plasma mass spectrometry and conducted interviews by telephone to obtain information on known breast cancer risk factors. Odds ratios (ORs) and 95% confidence intervals (CIs) for breast cancer by creatinine-adjusted cadmium levels were calculated by multivariable analysis. Statistical tests were two-sided. Women in the highest quartile of creatinine-adjusted cadmium level (> or = 0.58 microg/g) had twice the breast cancer risk of those in the lowest quartile (cadmium level (P(trend) = .01). Based on this study, the absolute risk difference is 45 (95% CI = 0 to 77) per 100,000 given an overall breast cancer rate of 124 per 100,000. Whether increased cadmium is a causal factor for breast cancer or reflects the effects of treatment or disease remains to be determined.

  17. Optimization of the front contact to minimize short-circuit current losses in CdTe thin-film solar cells

    Science.gov (United States)

    Kephart, Jason Michael

    With a growing population and rising standard of living, the world is in need of clean sources of energy at low cost in order to meet both economic and environmental needs. Solar energy is an abundant resource which is fundamentally adequate to meet all human energy needs. Photovoltaics are an attractive way to safely convert this energy to electricity with little to no noise, moving parts, water, or arable land. Currently, thin-film photovoltaic modules based on cadmium telluride are a low-cost solution with multiple GW/year commercial production, but have lower conversion efficiency than the dominant technology, crystalline silicon. Increasing the conversion efficiency of these panels through optimization of the electronic and optical structure of the cell can further lower the cost of these modules. The front contact of the CdTe thin-film solar cell is critical to device efficiency for three important reasons: it must transmit light to the CdTe absorber to be collected, it must form a reasonably passive interface and serve as a growth template for the CdTe, and it must allow electrons to be extracted from the CdTe. The current standard window layer material, cadmium sulfide, has a low bandgap of 2.4 eV which can block over 20% of available light from being converted to mobile charge carriers. Reducing the thickness of this layer or replacing it with a higher-bandgap material can provide a commensurate increase in device efficiency. When the CdS window is made thinner, a degradation in electronic quality of the device is observed with a reduction in open-circuit voltage and fill factor. One commonly used method to enable a thinner optimum CdS thickness is a high-resistance transparent (HRT) layer between the transparent conducting oxide electrode and window layer. The function of this layer has not been fully explained in the literature, and existing hypotheses center on the existence of pinholes in the window layer which are not consistent with observed results

  18. Reviews of the environmental effects of pollutants: IV. Cadmium

    Energy Technology Data Exchange (ETDEWEB)

    Hammons, A.S.; Huff, J.E.; Braunstein, H.M.; Drury, J.S.; Shriner, C.R.; Lewis, E.B.; Whitfield, B.L.; Towill, L.E.

    1978-06-01

    This report is a comprehensive, multidisciplinary review of the health and environmental effects of cadmium and specific cadmium derivatives. More than 500 references are cited. The cadmium body burden in animals and humans results mainly from the diet. In the United States, the normal intake of cadmium for adult humans is estimated at about 50 ..mu..g per day. Tobacco smoke is a significant additional source of cadmium exposure. The kidneys and liver together contain about 50% of the total cadmium body burden. Acute cadmium poisoning is primarily an occupational problem, generally from inhalation of cadmium fumes or dusts. In the general population, incidents of acute poisoning by inhaled or ingested cadmium or its compounds are relatively rare. The kidney is the primary target organ for toxicity from prolonged low-level exposure to cadmium. No causal relationship has been established between cadmium exposure and human cancer, although a possible link between cadmium and prostate cancer has been indicated. Cadmium has been shown to be teratogenic in rats, hamsters, and mice, but no such effects have been proven in humans. Cadmium has been reported to increase the frequency of chromosomal aberrations in cultured Chinese hamster ovary cells and in human peripheral leukocytes. The major concern about environmental cadmium is the potential effects on the general population. There is no substantial evidence of hazard from current levels of cadmium in air, water, or food. However, because cadmium is a cumulative poison and because present intake provides a relatively small safety margin, there are adequate reasons for concern over possible future increases in background levels.

  19. Strain differences in toxicity of oral cadmium intake in rats.

    Science.gov (United States)

    Ninkov, Marina; Popov Aleksandrov, Aleksandra; Mirkov, Ivana; Demenesku, Jelena; Mileusnic, Dina; Jovanovic Stojanov, Sofija; Golic, Natasa; Tolinacki, Maja; Zolotarevski, Lidija; Kataranovski, Dragan; Brceski, Ilija; Kataranovski, Milena

    2016-10-01

    Influence of genetic background on toxicity of oral cadmium (Cd) administration (30 days, in drinking water; 5 ppm and 50 ppm of cadmium) was examined in Albino Oxford (AO) and Dark Agouti (DA) rats. Similar cadmium deposition was noted in gut and draining mesenteric lymph nodes (MLN) of both strains but intensity and/or the pattern of responses to cadmium in these tissues differ. Less intense intestinal damage and leukocyte infiltration was observed in gut of cadmium-exposed AO rats. While gut-associated lymph node cells of DA rats responded to cadmium with an increase of cell proliferation, oxidative activity, IFN-γ, IL-17 production and expression, no changes of these activities of MLN cells of cadmium-treated AO rats were observed. Spleen, which accumulated cadmium comparable to MLN, responded to metal by drop in cell viability and by reduced responsiveness of proliferation and cytokine production to stimulation in DA rats solely, which suggest tissue dependence of cadmium effects. More pronounced cadmium effects on MLN and spleen cells of DA rats (which accumulated similar cadmium doses as AO rats), showed greater susceptibility of this strain to cadmium. The results presented, for the first time, depict the influence of genetic background to effects of oral cadmium administration. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Spectroscopic properties of 2.7 μm emission in Er{sup 3+} doped telluride glasses and fibers

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xiaokang [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Li, Kefeng, E-mail: kfli@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Xia; Kuan, Peiwen; Wang, Xin [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Hu, Lili [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2014-12-05

    Highlights: • Telluride glasses with high Er{sup 3+} doping concentration and good thermal property are prepared. • Energy transfer processes for 1.5 μm, 2.7 μm and visible emission are fully discussed. • Enhanced 2.7 μm emission is achieved from the bulk glasses. • An Er{sup 3+} doped fiber is successfully drawn and strong upconversion emission is observed in the fiber. - Abstract: Emissions at 2.7 μm from telluride glasses with various Er{sub 2}O{sub 3} doping concentrations are investigated. The prepared glasses have excellent thermostability and high rare-earth solubility. Judd–Ofelt parameters are calculated based on the absorption spectra. A large emission cross section (1.12 × 10{sup −20} cm{sup 2}) and a high spontaneous radiative coefficient (57.8 s{sup −1}) are obtained at 2.7 μm. The fluorescence properties of glasses with different concentrations are analyzed and presented. An Er{sup 3+}-doped fiber is fabricated via a rod-in-tube technique, and the loss at 1310 nm is ∼2.1 dB/m measured by using the cut-back method. Strong upconversion emission caused by intense pump absorption is observed from the Er{sup 3+}doped fiber under excitation by a 980 nm laser diode (LD). Telluride glasses with high Er{sup 3+} doping concentration and good thermal property are prepared. Energy transfer processes for 1.5 μm, and 2.7 μm, as well as visible emission are fully discussed. Enhanced 2.7 μm emission is achieved from the bulk glass. An Er{sup 3+} doped fiber is successfully drawn, and strong upconversion emission is observed in the fiber.