Sample records for bulk semiconductor detectors

  1. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institut fuer Physik, Muenchen (Germany)]|[Max-Planck-Institut fuer Extraterrestrische Physik, Garching (Germany). Semiconductor Lab.


    The following topics were dealt with: semiconductor radiation detectors, basic semiconductor structures, semiconductors, energy measurement, radiation-level measurement, position measurement, electronics of the readout function, detectors with intrinsic amplification, detector technology, device stability, radiation hardness and device simulation.

  2. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan


    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  3. Layered semiconductor neutron detectors (United States)

    Mao, Samuel S; Perry, Dale L


    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  4. Semiconductor radiation detector (United States)

    Bell, Zane W.; Burger, Arnold


    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  5. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.


    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  6. Semiconductor detectors in nuclear and particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Rehak, P. [Brookhaven National Lab., Upton, NY (United States); Gatti, E. [Piazza Leonardo da Vinci 32, Milano (Italy)


    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  7. Semiconductor detectors in nuclear and particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Rehak, P. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gatti, E. [Politecnico di Milano, Dipartimento di Elletronica e Informazione, Piazza Leondardo da Vinci 32, 20133 Milano (Italy)


    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  8. Modelling semiconductor pixel detectors

    CERN Document Server

    Mathieson, K


    expected after 200 ps in most cases. The effect of reducing the charge carrier lifetime and examining the charge collection efficiency has been utilised to explore how these detectors would respond in a harsh radiation environment. It is predicted that over critical carrier lifetimes (10 ps to 0.1 ns) an improvement of 40 % over conventional detectors can be expected. This also has positive implications for fabricating detectors, in this geometry, from materials which might otherwise be considered substandard. An analysis of charge transport in CdZnTe pixel detectors has been performed. The analysis starts with simulation studies into the formation of contacts and their influence on the internal electric field of planar detectors. The models include a number of well known defect states and these are balanced to give an agreement with a typical experimental I-V curve. The charge transport study extends to the development of a method for studying the effect of charge sharing in highly pixellated detectors. The ...

  9. Semiconductor neutron detector (United States)

    Ianakiev, Kiril D [Los Alamos, NM; Littlewood, Peter B [Cambridge, GB; Blagoev, Krastan B [Arlington, VA; Swinhoe, Martyn T [Los Alamos, NM; Smith, James L [Los Alamos, NM; Sullivan, Clair J [Los Alamos, NM; Alexandrov, Boian S [Los Alamos, NM; Lashley, Jason Charles [Santa Fe, NM


    A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.

  10. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn


    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  11. Microradiography with Semiconductor Pixel Detectors (United States)

    Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiří; Holý, Tomáš; Platkevič, Michal; Pospíšil, Stanislav; Vavřík, Daniel; Vykydal, Zdeněk


    High resolution radiography (with X-rays, neutrons, heavy charged particles, …) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

  12. Applications of semiconductor detectors to nuclear medicine

    CERN Document Server

    Bradford-Barber, H


    Progress in the development of semiconductor detectors is being applied to improving the resolution and imaging performance of nuclear medicine cameras. Nuclear medicine is briefly described. Efforts to develop semiconductor cameras for both planar and tomographic imaging are reviewed.

  13. Electron gas grid semiconductor radiation detectors (United States)

    Lee, Edwin Y.; James, Ralph B.


    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  14. Semiconductor detectors with proximity signal readout

    Energy Technology Data Exchange (ETDEWEB)

    Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)


    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  15. New materials for radiation hard semiconductor detectors

    CERN Document Server

    Sellin, P J; CERN. Geneva


    We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 1035 cm-2s-1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiati...

  16. Superconducting detectors for semiconductor quantum photonics

    Energy Technology Data Exchange (ETDEWEB)

    Reithmaier, Guenther M.


    In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

  17. Spin Splitting and Spin Current in Strained Bulk Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.


    We present a theory for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced in the samples studied in for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.

  18. Interlayer excitons in a bulk van der Waals semiconductor

    DEFF Research Database (Denmark)

    Arora, Ashish; Drueppel, Matthias; Schmidt, Robert


    , dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments...

  19. Direct conversion semiconductor detectors in positron emission tomography (United States)

    Cates, Joshua W.; Gu, Yi; Levin, Craig S.


    Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

  20. Radiation tolerant semiconductor sensors for tracking detectors

    CERN Document Server

    Moll, M


    The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” is developing radiation tolerant tracking detectors for the upgrade of the Large Hadron Collider at CERN (Super-LHC). One of the main challenges arising from the target luminosity of 1035 cm−2 s−1 are the unprecedented high radiation levels. Over the anticipated 5 years lifetime of the experiment a cumulated fast hadron fluence of about 1016 cm−2 will be reached for the innermost tracking layers. Further challenges are the expected reduced bunch crossing time of about 10 ns and the high track density calling for fast and high granularity detectors which also fulfill the boundary conditions of low radiation length and low costs. After a short description of the expected radiation damage after a fast hadron fluence of 1016 cm−2, several R&D approaches aiming for radiation tolerant sensor materials (defect and material engineering) and sensor designs (device engineering) are review...

  1. Use of semiconductor detectors in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Akimov, Y.K.


    Various methods of detecting nuclear particles and ..gamma.. rays in high energy physics by means of semiconductor detectors are described. The principle attention is devoted to questions related to use of semiconductor detectors in study of particle scattering at small momentum transfers. Spectrometry of x rays and ..gamma.. rays in experiments with beam-particle stoppings in the target is discussed. Examples are given of use of semiconductor detectors simultaneously as a target. Appreciable space is given in the review to details of experimental technique.

  2. Current responsivity of semiconductor superlattice THz-photon detectors

    DEFF Research Database (Denmark)

    Ignatov, Anatoly A.; Jauho, Antti-Pekka


    The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

  3. Modeling and simulation of bulk gallium nitride power semiconductor devices

    Directory of Open Access Journals (Sweden)

    G. Sabui


    Full Text Available Bulk gallium nitride (GaN power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

  4. Radiation hardness of semiconductor detectors for high-energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Khludkov, S.S.; Stepanov, V.E.; Tolbanov, O.P. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Tekhnicheskij Inst.


    The concept of radiation hardness of semiconductor materials in terms of local charge neutrality is proposed. Deep centres are invoked to play the basic role in the attainment of radiation hardness by high-resistivity semiconductor charged particle detectors exposed to neutron irradiation. (author).

  5. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor (United States)

    Zhao, Xiaolong; Chen, Liang; He, Yongning; Liu, Jinliang; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting; Zhang, Zhongbing; Ouyang, Xiaoping


    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 1013 Ω cm due to the compensation of the donor defects (VO) and acceptor defects (VZn and Oi) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  6. A new dimension to semiconductor detectors in high-energy physics and medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Wright, Victoria E-mail:; Davidson, D.; Mathieson, K.; O' Shea, V.; Pellegrini, G.; Roy, P.; Smith, K.; Rahman, M


    The search for new semiconductor detectors has led to interesting developments in recent years. As well as progress in the use of new materials, novel geometries have been tried. One idea being investigated is that of a '3D' detector. This has an array of electrodes that penetrate the detector bulk thus allowing these electrodes to be positioned closer to the interaction point than the comparable distance in a standard planar geometry. Methods of fabricating such a device have been investigated and subsequent devices characterised and compared with 3D simulations made using ISE-TCAD.

  7. Material engineering for the development of ultra-radiation hard semiconductor detectors

    CERN Document Server

    Bruzzi, M


    A possible upgrade of the CERN Large Hadron Collider luminosity up to 10**3**5cm**-**2s**-**1 will rise the hadron fluences in the inner detector region of the future high energy physics experiments up to similar to 10**1**6cm**-**2, well beyond the present operational limits of state-of-art Si tracking detectors. The goal of the CERN RD50 collaboration is to push the semiconductor detector technology beyond these limits, through the development of radiation hard bulk materials and the optimisation of the electrode configuration of the device. Recent results of the RD50 collaboration concerning material engineering are presented.

  8. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P


    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  9. Future prospects for semiconductor detectors in high-energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Ludlam, T.


    The track measuring capabilities of wire chambers and silicon detectors are compared. The question of future prospects is addressed in terms of the limitations or breadth of application of semiconductor detectors. Properties of strip detectors, charge transfer devices, and microdetector arrays are briefly reviewed, and a general purpose detector facility and its detector requirements are described. Rate capability and pattern recognition of such a detector are discussed, and the need for improved mass and momentum resolution is examined. Miniaturization of calorimeter-based detectors is covered briefly. Use of detectors in experiments involving rare and complex events consisting of up to thousands of final state particles, and in experiments involving ultra-relativistic heavy ion collisions is discussed. (LEW)

  10. Mercuric iodide semiconductor detectors encapsulated in polymeric resin

    Energy Technology Data Exchange (ETDEWEB)

    Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)


    The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

  11. Semiconductor radiation detectors technology and applications

    CERN Document Server


    The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

  12. CdTe and CdZnTe semiconductor gamma detectors equipped with ohmic contacts

    CERN Document Server

    Lachish, U


    Semiconductor gamma detectors, equipped with ohmic contacts, are uniform and fast response devices that are not sensitive to hole trapping. Gamma generated charges flow within the detector bulk towards the ohmic contacts, and induce additional charge flow from the contacts towards them. The additional flow stems from the fundamental principles of Poisson and the continuity equations. Electrons flow from the negative contacts towards the holes and recombine with them, therefore, they overcome hole trapping. The ohmic contact effect transforms the detector into a single carrier device. Good quality ohmic contact detectors are achieved from a crystal grown by standard methods, that initially has too many traps, by adjustment of the Fermi level position within the forbidden band. The device design and its principle of operation are discussed.

  13. Resolution degradation of semiconductor detectors due to carrier trapping

    Energy Technology Data Exchange (ETDEWEB)

    Kozorezov, A.G. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom)]. E-mail:; Wigmore, J.K. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Owens, A. [Science Payloads and Advanced Concepts Office, SCI-A, European Space Agency, ESTEC, Noordwijk (Netherlands); Hartog, R. den [Science Payloads and Advanced Concepts Office, SCI-A, European Space Agency, ESTEC, Noordwijk (Netherlands); Peacock, A. [Science Payloads and Advanced Concepts Office, SCI-A, European Space Agency, ESTEC, Noordwijk (Netherlands); A Al-Jawhari, Hala [Department of Physics, King Abdulaziz University, Jeddah (Saudi Arabia)


    Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6-660 keV.

  14. Semiconductors for room temperature nuclear detector applications

    CERN Document Server

    James, Ralph B


    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The""Willardson and Beer""Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

  15. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)


    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  16. Characterization of the first prototypes of Silicon Photomultipliers with bulk-integrated quench resistor fabricated at MPI semiconductor laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Jendrysik, Christian, E-mail: [Max-Planck-Institut Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Max-Planck-Institut für Physik, Föhringer Ring 6, D-80805 Munich (Germany); Andriček, Ladislav; Liemann, Gerhard; Moser, Hans-Günther; Ninković, Jelena; Richter, Rainer [Max-Planck-Institut Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Max-Planck-Institut für Physik, Föhringer Ring 6, D-80805 Munich (Germany); Schopper, Florian [Max-Planck-Institut Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Max-Planck-Institut für extraterrestrische Physik, Giessenbachstraße, D-85748 Garching (Germany)


    In this paper new results of the characterization of Silicon Photomultipliers (SiPMs) with bulk-integrated quench resistor will be presented. The novel detector concept was developed at the Max-Planck-Institute (MPI) semiconductor laboratory and allows a metal and polysilicon free entrance window which offers an improvement in photon detection efficiency (PDE). For electrical separation and suppression of optical cross talk (OCT) an insensitive area (gap) between neighboring cells is required. Based on simulations the first prototypes with devices of different combinations of cell size and gap were fabricated, providing the opportunity to study the influence of these parameters on the detector performance. First PDE measurements of the new detector are presented together with results of the influence of geometrical variations. Also an outlook on possible future developments of the concept with single cell read-out is given.

  17. Use of semiconductor detectors for radioactive waste account and control

    CERN Document Server

    Davydov, L N; Zakharchenko, A A


    The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

  18. Radiation-hard semiconductor detectors for SuperLHC

    CERN Document Server

    Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim


    An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

  19. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)


    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  20. Stable room-temperature thallium bromide semiconductor radiation detectors (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar


    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  1. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta


    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  2. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M


    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  3. Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test

    CERN Document Server

    AUTHOR|(CDS)2091318; Stamoulis, G; Vavougios, D

    The Beam Loss Monitoring system of the Large Hadron Collider is responsible for the pro- tection of the machine from damage and for the prevention of a magnet quench. Near the interaction points of the LHC, in the triplet magnets area, the BLMs are sensitive to the collision debris, limiting their ability to distinguish beam loss signal from signal caused due to the collision products. Placing silicon & diamond detectors inside the cold mass of the mag- nets, in liquid helium temperatures, would provide significant improvement to the precision of the measurement of the energy deposition in the superconducting coil of the magnet. To further study the signal formation and the shape of the transient current pulses of the aforementioned detectors in cryogenic temperatures, a simulation application has been developed. The application provides a fast way of determining the electric field components inside the detectors bulk and then introduces an initial charge distribution based on the properties of the radiat...

  4. Charge Collection Efficiency in a segmented semiconductor detector interstrip region (United States)

    Alarcon-Diez, V.; Vickridge, I.; Jakšić, M.; Grilj, V.; Schmidt, B.; Lange, H.


    Charged particle semiconductor detectors have been used in Ion Beam Analysis (IBA) for over four decades without great changes in either design or fabrication. However one area where improvement is desirable would be to increase the detector solid angle so as to improve spectrum statistics for a given incident beam fluence. This would allow the use of very low fluences opening the way, for example, to increase the time resolution in real-time RBS or for analysis of materials that are highly sensitive to beam damage. In order to achieve this goal without incurring the costs of degraded resolution due to kinematic broadening or large detector capacitance, a single-chip segmented detector (SEGDET) was designed and built within the SPIRIT EU infrastructure project. In this work we present the Charge Collection Efficiency (CCE) in the vicinity between two adjacent segments focusing on the interstrip zone. Microbeam Ion Beam Induced Charge (IBIC) measurements with different ion masses and energies were used to perform X-Y mapping of (CCE), as a function of detector operating conditions (bias voltage changes, detector housing possibilities and guard ring configuration). We show the (CCE) in the edge region of the active area and have also mapped the charge from the interstrip region, shared between adjacent segments. The results indicate that the electrical extent of the interstrip region is very close to the physical extent of the interstrip and guard ring structure with interstrip impacts contributing very little to the complete spectrum. The interstrip contributions to the spectra that do occur, can be substantially reduced by an offline anti-coincidence criterion applied to list mode data, which should also be easy to implement directly in the data acquisition software.

  5. Present trends and realisations in readout electronics for semiconductor detectors in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Gatti, E. (Politecnico di Milano (Italy). Ist. di Fisica); Manfredi, P.F. (Pavia Univ. (Italy). Ist. di Elettronica; Istituto Nazionale di Fisica Nucleare, Milan (Italy))


    Design criteria of signal processors for semiconductor detectors in high energy physics experiments are reviewed. Choice of input active devices of preamplifiers, detector-device capacitive matching, preamplifier configurations, variant and invariant signal processors are discussed. Several examples of processors for microstrip silicon detectors and for silicon detector telescopes are reviewed with particular emphasis on noise performance and high rate capabilities.

  6. Intraband carrier kinetics and picosecond pulse shaping in field-enhanced bulk semiconductor absorbers. (United States)

    Uskov, A V; McInerney, J; Karin, J R; Bowers, J E


    Picosecond pulse propagation through a field-enhanced waveguide bulk semiconductor saturable absorber is studied numerically. Fast switching from unsaturated absorption to delayed strong saturation and gain, as well as the predicted dependence of saturation energy on electric field, is based on intraband carrier kinetics and electric-field dynamics in the absorber and can lead to improved, controllable pulse shaping.

  7. Interaction of graphene quantum dots with bulk semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Mohapatra, P. K.; Singh, B. P., E-mail: [Department of physics, IIT Bombay, Mumbai-400076 (India); Kushavah, Dushyant; Mohapatra, J. [Centre for Research in Nanotechnology and Science, IIT Bombay-400076, Mumbai (India)


    Highly luminescent graphene quantum dots (GQDs) are synthesized through thermolysis of glucose. The average lateral size of the synthesized GQDs is found to be ∼5 nm. The occurrence of D and G band at 1345 and 1580 cm{sup −1} in Raman spectrum confirms the presence of graphene layers. GQDs are mostly consisting of 3 to 4 graphene layers as confirmed from the AFM measurements. Photoluminescence (PL) measurement shows a distinct broadening of the spectrum when GQDs are on the semiconducting bulk surface compared to GQDs in water. The time resolved PL measurement shows a significant shortening in PL lifetime due to the substrate interaction on GQDs compared to the GQDs in solution phase.

  8. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar


    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  9. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M


    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  10. Determining dose rate with a semiconductor detector - Monte Carlo calculations of the detector response

    Energy Technology Data Exchange (ETDEWEB)

    Nordenfors, C


    To determine dose rate in a gamma radiation field, based on measurements with a semiconductor detector, it is necessary to know how the detector effects the field. This work aims to describe this effect with Monte Carlo simulations and calculations, that is to identify the detector response function. This is done for a germanium gamma detector. The detector is normally used in the in-situ measurements that is carried out regularly at the department. After the response function is determined it is used to reconstruct a spectrum from an in-situ measurement, a so called unfolding. This is done to be able to calculate fluence rate and dose rate directly from a measured (and unfolded) spectrum. The Monte Carlo code used in this work is EGS4 developed mainly at Stanford Linear Accelerator Center. It is a widely used code package to simulate particle transport. The results of this work indicates that the method could be used as-is since the accuracy of this method compares to other methods already in use to measure dose rate. Bearing in mind that this method provides the nuclide specific dose it is useful, in radiation protection, since knowing what the relations between different nuclides are and how they change is very important when estimating the risks

  11. Radiation damage measurements in room-temperature semiconductor radiation detectors

    CERN Document Server

    Franks, L A; Olsen, R W; Walsh, D S; Vizkelethy, G; Trombka, J I; Doyle, B L; James, R B


    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI sub 2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 sup 1 sup 0 p/cm sup 2 and significant bulk leakage after 10 sup 1 sup 2 p/cm sup 2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10 sup 9 p/cm sup 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from a moderated fission spectrum of neutrons after fluences up to 10 sup 1 sup 0 n/cm sup 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particles at fluences up to 1.5x10 sup 1 sup 0 alpha/cm sup 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10 sup 9 alpha/cm sup 2. CT detectors show resolution...

  12. Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.


    We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the exis......We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition...

  13. The study of response of wide band gap semiconductor detectors using the Geant4

    National Research Council Canada - National Science Library

    Hussain Riaz; Mirza Sikander M; Mirza Nasir M


    The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors...

  14. Semiconductor detector developments for high energy space astronomy (United States)

    Meuris, A.


    The rise of high energy astrophysics and solar physics in the 20th century is linked to the development of space telescopes; since the 1960s they have given access to the X-ray and gamma-ray sky, revealing the most violent phenomena in the Universe. Research and developments in imaging concepts and sensing materials haven't stopped since yet to improve the sensitivity of the X-ray and gamma-ray observatories. The paper proposes an overview of instrument realizations and focuses on the innovative detection techniques and technologies for applications from 0.1 keV to 10 MeV energy range. Solid-state detectors are prominent solutions for space instrumentation because of their excellent imaging and spectroscopic capabilities with limited volume and power resources. Various detection concepts based on semiconductors (Compton camera, Cd(Zn)Te pixel hybrids, DePFET active pixel sensors) are under design or fabrication for the near-future missions like Astro-H, BepiColombo, Solar Orbiter. New technologies on sensing materials, front-end electronics, interconnect processes are under study for the next generation of instruments to push back our knowledge of star and galaxy formation and evolution.

  15. Calculation of transport parameters of gamma-radiation detectors based on semi-insulating semiconductors

    Directory of Open Access Journals (Sweden)

    Zakharchenko A. A.


    Full Text Available A method of fast determination of the high resistivity detector charge collection parameters with the use of the detector dosimetric characteristics and by means of mathematical simulation is proposed. A problem of calculation of charge collection parameters is investigated for planar gamma-radiation dosimetric detectors made from semi-insulating compound semiconductor CdTe (CdZnTe. An applicability of the considered method is verified by computer simulation for HgI2 gamma-radiation detectors. The considered method can be used in the development of both dosimetry and spectrometry devices for radiation monitoring and for monitoring of characteristic devices operating in hard radiation fields. KEY WORDS: mobility, life time, semiconductor detectors, semi-insulating semiconductors, CdTe, CdZnTe, HgI2, Monte-Carlo method.

  16. [Feasibility study of CdTe Semiconductor detector for gamma camera--evaluation of planar images]. (United States)

    Takayama, T; Nakamura, N; Motomura, N; Mori, I; Ozaki, T; Ohno, R


    To evaluate the performance of a semiconductor detector for use in a gammacamera system, we assembled a detector with a small field of view--1 inch x 1 inch and 1 inch x 2 inch--made from CdTe (Cadmium telluride). We then compared the planar images and energy resolution of the resulting detectors against those of a conventional gammacamera. Pixel pitch of the detector was 1.6 mm x 1.6 mm, and was manufactured by Acrorad Corporation. Average FWHM of the energy spectrum for the semiconductor detector was 5.11% (SD: 0.80%, Best: 3.26%, Worst: 6.68%). The planar images obtained were of a letter phantom made from pieces of lead and of an IMP brain phantom. Since the field of view of the semiconductor detector was small, the image of the IMP brain phantom was acquired by moving the semiconductor over the collimated detector module until the area of the entire phantom was covered. The images from the semiconductor assembly were compared with those from a conventional gammacamera using the same conditions, and it was found that visual image quality was superior to those of the conventional camera system.

  17. Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

    Energy Technology Data Exchange (ETDEWEB)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail:, E-mail:, E-mail: [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica


    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  18. Interferometric method for quantitatively testing the RadOptic effect in bulk semiconductors (United States)

    Peng, Bo-dong; Song, Yan; Hei, Dong-wei; Zhao, Jun


    For the quantitative investigation of MeV-photon-induced changes in the refractive indices of bulk semiconductors, a model was established to describe the evolution of the excess carrier density, including the generation and recombination processes. The two key parameters of the evolution model, namely, the summed injection intensity and the gamma intensity curve, were obtained via dose measurements and gamma pulse monitoring, respectively. An interferometric method of measuring instantaneous changes in the refractive index and obtaining real-time measurements of the excess carrier density in bulk materials was successfully implemented. The probe beam was transmitted through a single-mode fiber to form double-beam interference in a slab geometry. Two bulk samples, one consisting of intrinsic GaAs and one of intrinsic ZnO, were tested. The recombination time constant of the intrinsic GaAs sample was found to be approximately 0.6 ns and did not vary distinctly with the photon energy, whereas the ZnO sample's recombination behavior consisted of two components. The short component was evident when short and intense pulses were incident, whereas the long component dominated under long and relatively weak pulses. The method reported in this work can be used to study the excess carrier dynamics induced by pulsed gamma radiation and to investigate the mechanisms of refractive index modulation under pulsed gamma conditions; thus, it is expected to be beneficial for guiding the development of RadOptic systems based on bulk materials.

  19. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)


    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  20. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts (United States)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  1. Hybrid tracking detector based on semiconductor and gas technologies (United States)

    Bashindzhagyan, George; Korotkova, Natalia; Romaniouk, Anatoli; Sinev, Nikolai; Tikhomirov, Vladimir


    New Silicon-Gas Pixel Detector (SiGPD) is the result of the further development already proposed Gas-Pixel Detector (GPD). The only disadvantage of GPD was the uncertainty of the particle arriving time. The problem can be solved by additional silicon pixels implementation inside existed electronic chip epitaxial layer during regular chip production. The cost of new Si-Gas Pixel Detector remains practically the same. The new detectors have self-triggering properties and can be used for a first level trigger generation in the particle physics experiments and for many other applications.

  2. Investigation of large area semiconductor strip detectors for use in low energy nuclear physics

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, N.; Dennert, H.; Eyrich, W.; Lehmann, A.; Moosburger, M.; Wirth, H. (Physikalisches Inst., Univ. Erlangen-Nuernberg (Germany))


    Commercial large area ion implanted semiconductor strip detectors were investigated in respect of depletion behaviour, using the 8 MeV-proton beam of the Erlangen Tandem Accelerator. A characteristic resistivity profile of the n-type silicon detector material was observed. The semiconductor counters were used in a coincidence experiment for detecting charged decay particles from the ({sup 6}Li, {sup 6}He p) reaction on {sup 12}C. Covering a total solid angle of 330 msr, they allowed the simultaneous measurement of a large number of angles. (orig.).

  3. Dynamical effects and terahertz harmonic generation in low-doped bulk semiconductors and submicron structures

    Energy Technology Data Exchange (ETDEWEB)

    Persano Adorno, D.; Capizzo, M.C.; Zarcone, M. [Dipartimento di Fisica e Tecnologie Relative, Viale delle Scienze, Ed. 18, 90128, Palermo (Italy)


    We present results obtained using a three-dimensional multivalleys Monte Carlo (MC) model to simulate the nonlinear carrier dynamics under the influence of an intense sub-terahertz electric field in a doped bulk semiconductor. By self-consistently coupling a one-dimensional Poisson solver to the ensemble MC code we simulate also the nonlinear carrier dynamics in n{sup +}nn{sup +} structures operating under large-amplitude periodic signals and investigate the voltage-current characteristic hysteresis cycle and the high-order harmonic efficiency. For both cases we discuss the dependence of the nonlinearities and of the harmonic generation efficiency on the frequency and the intensity of the alternating signal. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Developments in semiconductor detector technology and new applications -- symposium summary

    CERN Document Server

    Kamae, T


    Most traditional silicon-based detectors have advanced close to their intrinsic limits and optimization of the front-end electronics has become most crucial in improving performance for specific applications. CdZnTe and CdTe, the most promising in the hard X-ray band, are now finding real commercial applications. Si drift-type detectors are among the few silicon-based detectors whose merits have not been fully exploited. When they are used as photodiodes and combined with new high-Z, high light-yield scintillators (eg. GSO), we can expect a break-through in MeV gamma-ray detection.

  5. Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same (United States)

    McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.


    Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

  6. Thermal and Electric Cloaking Effect in Concentric Composite Made of Homogeneous Bulk and Porous Semiconductors (United States)

    Tarkhanyan, Roland H.; Niarchos, Dimitris G.


    A new material platform is presented to manipulate heat and charge transportation in steady-state conditions. More precisely, we investigate the conceptual realization of a concentric composite made of the same isotropic and homogeneous semiconductor material with layers of different porosity, and show the possibility of a simultaneous cloaking performance in such a device for both heat flux and electric current without disturbing external fields. The background medium in the composite is a porous material with a periodical 3D cubic lattice of spherical hollow pores while the cylindrical shell is made from the same bulk material with zero porosity. A sound analytical expression is found for the volume fraction of the pores at which bi-functional cloaking effect can be realized. To validate our theoretical results, we also demonstrate the temperature and heat flux profiles as well as the voltage and current profiles in numerical simulations for a composite consisting of bulk (cylindrical shell) and porous (background) n-type silicon layers.

  7. Transport Imaging of Spatial Distribution of Mobility-Lifetime (Micro Tau) Product in Bulk Semiconductors for Nuclear Radiation Detection (United States)


    limited field applications, cryogenically cooled high purity germanium (HPGe) semiconductor detectors can identify the isotopic signature of gamma rays...grown crystals were cut into ~1-mm thick slices using a diamond wire saw. The slices were grinded with a 30 microns alumina grit slurry to remove

  8. Diffusion effects in semiconductor X-ray detectors with inhomogeneous distribution of electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Kozorezov, A.G. [Department of Physics, Lancaster University, Lancaster (United Kingdom)], E-mail:; Wigmore, J.K. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Owens, A.; Hartog, R. den [Advanced Technologies Section, Science Projects Department, European Space Agency, ESTEC, Noordwijk (Netherlands)


    We derive an expression for the charge output of an X-ray semiconductor detector taking account of carrier drift and diffusion. It is found that diffusion effects may strongly influence charge collection patterns at the edges of the collection zones. We show that, in multi-electrode detectors, carrier diffusion across the boundaries between collection and non-collection zones depends on the nature of the boundary surfaces and the biasing conditions. Diffusion effects for a ring-drift detector are illustrated, and the conditions derived under which diffusion effects for collection around the outer edge of the collection zone are fully suppressed by the drift.

  9. Experimental characterization of semiconductor-based thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bedogni, R., E-mail: [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Bortot, D.; Pola, A.; Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, via La Masa 34, 20156 Milano (Italy); INFN—Milano, Via Celoria 16, 20133 Milano (Italy); Gómez-Ros, J.M. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain); Sacco, D. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); INAIL—DIT, Via di Fontana Candida 1, 00040 Monteporzio Catone (Italy); Esposito, A.; Gentile, A.; Buonomo, B. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Palomba, M.; Grossi, A. [ENEA Triga RC-1C.R. Casaccia, via Anguillarese 301, 00060 S. Maria di Galeria, Roma (Italy)


    In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of {sup 6}LiF on commercially available windowless p–i–n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 10{sup 12} cm{sup −2})

  10. Comparing multiple exciton generation in quantum dots to impact ionization in bulk semiconductors: implications for enhancement of solar energy conversion. (United States)

    Beard, Matthew C; Midgett, Aaron G; Hanna, Mark C; Luther, Joseph M; Hughes, Barbara K; Nozik, Arthur J


    Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.

  11. Use of semiconductor detectors in high-energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Manfredi, P.F.


    Solid state detecting devices, like silicon and germanium active targets, telescopes of silicon detectors and microstrip position-sensing chambers are discussed in their more significant applications in elementary-particle physics. Special attention is devoted to the limitations in their performances arising from the electrical noise in the front-end circuitry.


    Energy Technology Data Exchange (ETDEWEB)



    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  13. Study of plasma oscillations in photoelectric semiconductor detectors (United States)

    Luo, Bing-feng; Lu, Long-zhao; Cheng, Xiang-ai; Yu, Xiang-yang


    In this paper, the phenomena of plasma oscillations in silicon-based p-n junction photoelectric detector are researched. Starting from the classic Drift-Diffusion Model, the basic equations of photodetector with reverse bias under the radiation of femtosecond optical pulse were deduced. In our physical model, the carrier mobility in low electric field was introduced, and basic parameters including diffusion coefficients and damping coefficients were modified according to the nonlinear relation between carrier drift velocity and high electric field. A numerical algorithm base d on the finite difference method is proposed to solve the model. By solving the equations numerically, we obtained the transient dynamic behaviors of this kind of photoelectric detector, the current responses of the plasma oscillations phenomena, and the frequency of plasma oscillations, etc. By comparing the numerical solutions of plasma oscillations with approximate analytical solutions, we explored the reason for the difference between them.

  14. Inter-electrode charge collection in high-purity germanium detectors with amorphous semiconductor contacts

    Energy Technology Data Exchange (ETDEWEB)

    Looker, Q., E-mail: [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, CA 94720 (United States); Amman, M. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Vetter, K. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, CA 94720 (United States)


    High-purity germanium (HPGe) radiation detectors with segmented signal readout electrodes combine excellent energy resolution with fine spatial resolution, opening exciting possibilities in radiation imaging applications. Segmenting the electrodes provides the ability to determine the positions of radiation interactions in the detector, but it also brings potential challenges that can inhibit performance. A challenge unique to segmented electrode detectors is collection of charge carriers to the gap between adjacent electrodes rather than to the electrodes themselves, which gives a deficit in the summed energy. While amorphous semiconductor electrical contacts have enabled a simplified fabrication process capable of fine electrode segmentation, the amorphous semiconductor passivation layer between electrodes is prone to inter-electrode charge collection. This article presents a study of the impact of fabrication process parameters on the energy deficit due to inter-electrode charge collection for double-sided strip detectors. Eight double-sided strip HPGe detectors were fabricated with amorphous germanium (a-Ge) and amorphous silicon (a-Si) contacts formed by sputter deposition. Each detector was evaluated for inter-electrode charge collection performance, using as a metric the deficit in the summed signal of two adjacent electrodes. It is demonstrated that both a-Ge and a-Si contacts can be produced with nearly non-existent inter-electrode charge collection when the appropriate combination of sputter gas hydrogen content and gas pressure are selected.

  15. Leakage current in high-purity germanium detectors with amorphous semiconductor contacts

    Energy Technology Data Exchange (ETDEWEB)

    Looker, Q., E-mail: [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States); Amman, M. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States); Vetter, K. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States)


    Amorphous semiconductor electrical contacts on high-purity Ge radiation detectors have become a valuable technology because they are simple to fabricate, result in thin dead layers, block both electron and hole injection, and can readily be finely segmented as needed for applications requiring imaging or particle tracking. Though significant numbers of detectors have been successfully produced for a variety of applications using the amorphous semiconductor contact technology, there remains a need to better understand the dependence of performance characteristics, particularly leakage current, on the fabrication process parameters so that the performance can be better optimized. To this end, we have performed a systematic study of leakage current on RF-sputter-deposited amorphous-Ge (a-Ge) and amorphous-Si (a-Si) contacts as a function of process and operational parameters including sputter gas pressure and composition, number of detector temperature cycles, and time spent at room temperature. The study focused primarily on the current resulting from electron injection at the contact. Significant findings from the study include that a-Si produces lower electron injection than a-Ge, the time the detector spends at room temperature rather than the number of temperature cycles experienced by the detector is the primary factor associated with leakage current change when the detector is warmed, and the time stability of the a-Ge contact depends on the sputter gas pressure with a higher pressure producing more stable characteristics.

  16. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport (United States)

    Su, Ching-Hua


    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  17. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)


    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  18. Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

    CERN Document Server

    Clark, A G; Donega, M; Ferrère, D; Fortin, R; García, J E; González, S; Hirt, C; Ikegami, Y; Kagan, H; Kohriki, T; Kondo, T; Lindsay, S; MacPherson, A; Mangin-Brinet, M; Mikulec, B; Moorhead, G F; Niinikoski, T O; Pernegger, H; Perrin, E; Roe, S; Taylor, G N; Terada, S; Unno, Y; Vos, M; Wallny, R; Weber, M


    The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued.

  19. Development of radiation tolerant semiconductor detectors for the Super-LHC

    CERN Document Server

    Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N


    The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

  20. Effects of nuclear fusion produced neutrons on silicon semiconductor plasma X-ray detectors

    CERN Document Server

    Kohagura, J; Hirata, M; Numakura, T; Minami, R; Watanabe, H; Sasuga, T; Nishizawa, Y; Yoshida, M; Nagashima, S; Tamano, T; Yatsu, K; Miyoshi, S; Hirano, K; Maezawa, H


    The effects of nuclear fusion produced neutrons on the X-ray energy responses of semiconductor detectors are characterized. The degradation of the response of position-sensitive X-ray tomography detectors in the Joint European Torus (JET) tokamak is found after neutron exposure produced by deuterium-deuterium and deuterium-tritium plasma fusion experiments. For the purpose of further detailed characterization of the neutron degradation effects, an azimuthally varying-field (AVF) cyclotron accelerator is employed using well-calibrated neutron fluence. These neutron effects on the detector responses are characterized using synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory (KEK). The effects of neutrons on X-ray sensitive semiconductor depletion thicknesses are also investigated using an impedance analyser. Novel findings of (i) the dependence of the response degradation on X-ray energies as well as (ii) the recovery of the degraded detector response due to the detector bias applic...

  1. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C


    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  2. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail:; Panas, K.; Zuzel, G.


    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  3. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys


    Jena, Debdeep; Heikman, Sten; Green, Daniel; Yaacov, Ilan B.; Coffie, Robert; Xing, Huili; Keller, Stacia; DenBaars, Steve; Speck, James S.; Mishra, Umesh K.


    We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization doped electron distributions than comparable shallow donor doped structures. The technique is readily employed for creating...

  4. Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Khludkov, S.S. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.; Stepanov, V.E. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.; Tolbanov, O.P. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.


    A model of the radiation hardness of semiconductor detector materials is developed in terms of local charge neutrality (LCN). The non-ionizing energy deposition in GaAs has been calculated for protons with energies ranging from 1 to 25 GeV. Deep centres are shown to play a basic role in determining the radiation hardness of charged particle detectors fabricated from high-resistivity semiconductor material. (orig.).

  5. Bulk GaN alpha-particle detector with large depletion region and improved energy resolution

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Qiang; Mulligan, Padhraic [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210 (United States); Wang, Jinghui [Department of Radiology, Stanford University, 1201 Welch Rd, Stanford, CA 94305 (United States); Chuirazzi, William [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210 (United States); Cao, Lei, E-mail: [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210 (United States)


    An alpha-particle detector was fabricated using a freestanding n-type bulk GaN wafer with a Au/Ni/GaN sandwich Schottky structure. Current–voltage measurements at room temperature revealed a Schottky contact with a leakage current of 7.53±0.3 nA at a reverse bias of 200 V. The detector had a large depletion depth that can capture much of the energy from 5.486 MeV alpha particles emitted from a {sup 241}Am source. The resolution of its alpha-particle energy spectrum was improved to 2.2±0.2% at 5.486 MeV under a bias of 550 V. This superior resolution was attributed to the shortening of the carrier transit time and the large energy deposition within the large depletion depth, i.e., 27 µm at −550 V, which all resulted in a more complete charge collection. A model developed using the ATLAS simulation framework from Silvaco Inc. was employed to study the charge collection process. The simulation results were found to agree closely with the experimental results. This detector will be beneficial for research at neutron scattering facilities, the International Thermonuclear Experimental Reactor, and the Large Hadron Collider, among other institutions, where the Si-based charged particle detectors could be quickly degraded in an intense radiation field. - Highlights: • An alpha-particle detector based on a Schottky-structured GaN wafer was tested. • The detector's large depletion depth enables fuller energy spectra to be obtained. • The best resolution yet attained in GaN alpha-particle spectrometry was achieved. • The detector's short carrier transit time resulted in improved charge collection. • This detector is usable in extreme conditions, including intense radiation fields.

  6. The study of response of wide band gap semiconductor detectors using the Geant4

    Directory of Open Access Journals (Sweden)

    Hussain Riaz


    Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

  7. Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes (United States)

    Kong, Xiangzi; Liu, Caixia; Dong, Wei; Zhang, Xindong; Tao, Chen; Shen, Liang; Zhou, Jingran; Fei, Yongfeng; Ruan, Shengping


    In this letter, metal-semiconductor-metal (MSM) TiO2 ultraviolet (UV) detectors with Ni electrodes have been fabricated. TiO2 thin films were prepared by sol-gel method. At 5 V bias, the dark current of the detector with Ni electrode was 1.83 nA. High photoresponse of 889.6 A/W was found under irradiation of 260 nm UV light, which was much higher than those of other wide bandgap UV detectors with MSM structure. The high photoresponse was due to the great internal gain caused by the hole trapping at interface. The rise time of the device was 13.34 ms and the fall time was 11.43 s.

  8. A review of design considerations for the sensor matrix in semiconductor pixel detectors for tracking in particle physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Sally E-mail:


    Methods have been developed to improve the reliability of silicon sensors, in particular for pixel detectors, and their resistance to radiation damage, as it is encountered in tracking detectors in particle physics experiments. The choice of wafer material, the processing techniques, and the sensor layout are discussed. Alternative semiconductor substrates and variations on the planar hybrid design are mentioned.

  9. Comment on ''Spectral Identification of thin film coated and solid form semiconductor neutron detectors'' by McGregor and Shultis

    Energy Technology Data Exchange (ETDEWEB)

    Hallbeck, S; Caruso, Anthony N.; Adenwalla, S; Brand, Jennifer I.; Byun, Dongjin; Jiang, Hualiang; Lin, J Y.; Losovyj, Ya B.; Lundstedt, C; McIlroy, David N.; Pitts, W K.; Robertson, B W.; Dowben, Peter A.


    While we welcome the attention paid to boron-rich semiconductor devices, several clarifications are indicated to a recent paper [1] modeling neutron capture in boron-rich semiconductor solid-state detectors

  10. Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

    CERN Document Server

    Quinn, T; Bruzzi, M; Cunningham, W; Mathieson, K; Moll, M; Nelson, T; Nilsson, H E; Pintillie, I; Rahman, M; Reynolds, L; Sciortino, S; Sellin, P J; Strachan, H; Svensson, B G; Vaitkus, J


    Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 10**1**4 hardrons/cm**2. Material of thickness 40um gave a charge collection efficiency of 100% dropping to around 60% at 100mum thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 10 **1**6/cm**2 as required by future particle physics experiments.

  11. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury


    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  12. Bulk GaN alpha-particle detector with large depletion region and improved energy resolution (United States)

    Xu, Qiang; Mulligan, Padhraic; Wang, Jinghui; Chuirazzi, William; Cao, Lei


    An alpha-particle detector was fabricated using a freestanding n-type bulk GaN wafer with a Au/Ni/GaN sandwich Schottky structure. Current-voltage measurements at room temperature revealed a Schottky contact with a leakage current of 7.53±0.3 nA at a reverse bias of 200 V. The detector had a large depletion depth that can capture much of the energy from 5.486 MeV alpha particles emitted from a 241Am source. The resolution of its alpha-particle energy spectrum was improved to 2.2±0.2% at 5.486 MeV under a bias of 550 V. This superior resolution was attributed to the shortening of the carrier transit time and the large energy deposition within the large depletion depth, i.e., 27 μm at -550 V, which all resulted in a more complete charge collection. A model developed using the ATLAS simulation framework from Silvaco Inc. was employed to study the charge collection process. The simulation results were found to agree closely with the experimental results. This detector will be beneficial for research at neutron scattering facilities, the International Thermonuclear Experimental Reactor, and the Large Hadron Collider, among other institutions, where the Si-based charged particle detectors could be quickly degraded in an intense radiation field.

  13. Semiconductor Radiation Detectors: Basic principles and some uses of a recent tool that has revolutionized nuclear physics are described. (United States)

    Goulding, F S; Stone, Y


    The past decade has seen the rapid development and exploitation of one of the most significant tools of nuclear physics, the semiconductor radiation detector. Applications of the device to the analysis of materials promises to be one of the major contributions of nuclear research to technology, and may even assist in some aspects of our environmental problems. In parallel with the development of these applications, further developments in detectors for nuclear research are taking place: the use of very thin detectors for heavyion identification, position-sensitive detectors for nuclear-reaction studies, and very pure germanium for making more satisfactory detectors for many applications suggest major future contributions to physics.

  14. Development and characterization of a 3D CdTe:Cl semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Avenel, Marie-Laure [CEA, LETI, MINATEC-Campus, 17 rue des Martyrs, F-38054 Grenoble (France); Farcage, Daniel [CEA, DEN-DPC, F-91191 Gif Sur Yvette (France); Ruat, Marie; Verger, Loieck [CEA, LETI, MINATEC-Campus, 17 rue des Martyrs, F-38054 Grenoble (France); Gros d' Aillon, Eric, E-mail: [CEA, LETI, MINATEC-Campus, 17 rue des Martyrs, F-38054 Grenoble (France)


    Conventional semiconductor radiation detectors for medical imaging use either a planar structure or a pixelated structure. These structures exhibit a natural trade-off between the absorption of incident photons and the collection of free charge carriers, resulting in a limited choice of detection materials. Such a trade-off can be avoided using a 3D structure in which electrodes are drilled into the detection volume. A prototype 3D semiconductor detector has been developed, using CdTe:Cl. A laser drilling technique was used to create electrodes in the volume of the material. The electrodes were contacted using electroless Au deposition. The manufacturing process and the first spectrometric results obtained with {sup 241}Am and {sup 57}Co irradiation are presented below. Synchrotron X-ray irradiation was also performed at the European Synchrotron Radiation Facility (ESRF) at an incident energy of 60 keV. An individual photon-counting ability was exhibited. These results will be used as a proof of concept for investigating 3D detectors in the medical-imaging energy range.

  15. Impact of Molecular Orientation and Packing Density on Electronic Polarization in the Bulk and at Surfaces of Organic Semiconductors

    KAUST Repository

    Ryno, Sean M.


    The polarizable environment surrounding charge carriers in organic semiconductors impacts the efficiency of the charge transport process. Here, we consider two representative organic semiconductors, tetracene and rubrene, and evaluate their polarization energies in the bulk and at the organic-vacuum interface using a polarizable force field that accounts for induced-dipole and quadrupole interactions. Though both oligoacenes pack in a herringbone motif, the tetraphenyl substituents on the tetracene backbone of rubrene alter greatly the nature of the packing. The resulting change in relative orientations of neighboring molecules is found to reduce the bulk polarization energy of holes in rubrene by some 0.3 eV when compared to tetracene. The consideration of model organic-vacuum interfaces highlights the significant variation in the electrostatic environment for a charge carrier at a surface although the net change in polarization energy is small; interestingly, the environment of a charge even just one layer removed from the surface can be viewed already as representative of the bulk. Overall, it is found that in these herringbone-type layered crystals the polarization energy has a much stronger dependence on the intralayer packing density than interlayer packing density.

  16. Verification of MCNP simulation according to various widths of shielding using by CZT semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Sorin; Park, Gyeongseok; Kim, Hyeondae [Energy And Environment Systems Co. Ltd., Daejeon (Korea, Republic of); Kang, Hwa Yoon; Lee, Byoungil; Kim, Jeongin; Kang, Seo Kon [Korea Hydro and Nuclear Power Co. Ltd., Daejeon (Korea, Republic of)


    The program has EMECC (Ensemble de Mesure et d'Etude de la Contamination des Circuits) and CZT (Cadmium Zinc Telluride) campaign which are tools to analyze nuclides at a NPP. AEP (American Electric Power) also introduced another type CZT detector to perform source term monitoring and they had announced the results through the ISOE (Information System on Occupational Exposure). Energy And Environment Systems Co., Ltd(ENESYS) and Korea Hydro and Nuclear Power Co., Ltd(KHNP), Radiation Health Research Institute(RHRI) are developing the CZT Monitoring System to measure source terms, such as CRUDs(Chalk River Unidentified Deposits) in the Primary Coolant System using by CZT semiconductor. A CZT semiconductor detector is good to monitor source terms at a NPP in that it is possible to make a portable type because it does not need any cooling system at room temperature and it has good energy resolution. The CZT Monitoring System can measure activity of CRUDs with analysis of detected gamma spectrum but it is must considered detector efficiency, spatial distribution of radiation source, geometry of materials between detector and radiation source. Because they affect gamma spectrum shape. This study conducted to calculate activity of source terms such as CRUD in pipe or steam generator at a NPP with in-vivo method. To known how it is in pipe of primary coolant system, as we mentioned, three factors are very important. We checked one of them, geometric effect, of use MC simulation and Measurement. The shielding effect result between MC and Measurement are almost all same with ± 5% error. As we expect the results are independent from dose rate (or distance) and a kind of detector size.

  17. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja


    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  18. Perfluorocarbons and their use in Cooling Systems for Semiconductor Particle Detectors

    CERN Document Server

    Vacek, V; Ilie, S; Lindsay, S


    We report on the development of evaporative fluorocarbon cooling for the semiconductor pixel and micro-strip sensors of inner tracking detector of the ATLAS experiment at the future CERN Large Hadron Collider (LHC). We proceeded with studies using perfluoro-n-propane (3M-"PFG 5030"; C3F8), perfluoro-n-butane (3M-"PFG 5040"; C4F10), trifluoro-iodo-methane (CF3I) and custom C3F8/C4F10 mixtures. Certain thermo-physical properties had to be verified for these fluids.

  19. Development of a novel 2D position-sensitive semiconductor detector concept

    CERN Document Server

    Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I


    A novel 2D position-sensitive semiconductor detector concept has been developed employing resistive electrodes in a single-sided silicon microstrip sensor. The resistive charge division method has been implemented reading out each strip at both ends, in order to get the second coordinate of an ionizing event along the strips length. Two generations of prototypes, with different layout, have been produced and characterized using a pulsed near infra-red laser. The feasibility of the resistive charge division method in silicon microstrip detectors has been demonstrated and the possibility of single-chip readout of the device has been investigated. Experimental data were compared with the theoretical expectations and the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The agreement between experimental and simulation results validates the developed simulation as a tool for the optimization of future sensor prototypes.

  20. Future semiconductor detectors using advanced microelectronics with post-processing, hybridization and packaging technology

    CERN Document Server

    Heijne, Erik H M


    Several challenges for tracking with semiconductor detectors in the high rate environment of future elementary particle physics experiments are discussed, such as reduction of spurious hits and ambiguities and identification of short-lived 'messenger' particles inside jets. To meet these requirements the instrumentation increasingly calls on progress in microelectronics. Advanced silicon integration technology for 3D packaging now offers post-processing of CMOS such as wafer thinning to 50µm and through-wafer vias of <10µm. These technologies might be applied to create new tracking detectors which can handle vertexing under the difficult rate conditions. The sensor layers can be only ~50µm thick with low noise performance and better radiation hardness by using small volume pixels. Multi-layer sensors with integrated coincidence signal processing could discriminate real tracks from various sources of background. Even in a ~400µm thick 3D assembly the vectors of tracks can be determined in ~10 degree bin...

  1. Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Oldorf, Christian


    COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular {sup 116}Cd, {sup 106}Cd and {sup 130}Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of {sup 116}Cd, a background rate in the order of 10{sup -3} counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10{sup 26} years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

  2. Development of a gamma ray monitor using a CdZnTe semiconductor detector. (United States)

    Rasolonjatovo, A H D; Shiomi, T; Nakamura, T; Nishizawa, H; Tsudaka, Y; Fujiwara, H; Araki, H; Matsuo, K


    The aim of this study was to develop a new X ray and gamma ray monitor using the CdZnTe semiconductor detector, which has high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of a 10 mm x 10 mm by 2 mm thick CdZnTe detector were measured in the energy range of 10 keV to 1.8 MeV by using monoenergetic X ray and gamma ray sources. The measured results showed very good agreement with the results calculated using the EGS4 Monte Carlo code taking into account the charge collection efficiency in the detector. By using two CZT detectors of 10 mm x 10 mm x 2 mm and 3 mm x 3 mm x 2 mm coupled with a filter, the weighted sum of a few energy channels with different cut-off energies was finally found to achieve a flat energy response with an equivalent dose (counts per microSv) within +/-30% or +/- 10% deviation.

  3. Development and characterization of the lead iodide semiconductor detector; Desenvolvimento e caracterizacao do detector semicondutor de iodeto de chumbo

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de


    A methodology for purification and growth of PbI{sub 2} crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ({sup 241}Am) alpha particle and ({sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for {sup 241} Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI{sub 2} crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

  4. Theory of the temperature dependent dielectric function of semiconductors: from bulk to surfaces. Application to GaAs and Si

    Energy Technology Data Exchange (ETDEWEB)

    Shkrebtii, Anatoli I.; Teatro, Timothy; Henderson, Laura [Faculty of Science, University of Ontario Institute of Technology, Simcoe Street North 2000, L1H 7K4 Oshawa (Canada); Ibrahim, Zahraa A. [Faculty of Science, University of Ontario Institute of Technology, Simcoe Street North 2000, L1H 7K4 Oshawa (Canada); Department of Physics, University of Toronto, M5S 1A7, Toronto (Canada); Richter, Wolfgang [Dipartimento di Fisica, Universita di Roma Tor Vergata, 00133 Rome (Italy); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 10623 Berlin (Germany); Lee, Martin J.G. [Department of Physics, University of Toronto, M5S 1A7, Toronto (Canada)


    A novel, efficient method for calculating the temperature dependencies of the linear dielectric functions of semiconductor systems and its application are presented. The method follows an intuitive and natural path with ab-initio finite temperature molecular dynamics providing the thermally perturbed atomic configurations, which are used as structural inputs for calculating the dielectric function. The effect of lattice dynamics, including quantum zero point vibration, on the electronic bands and dielectric function of crystalline (c-) GaAs and Si as well as hydrogenated amorphous Si (a-Si:H) is discussed. Our theoretical results for bulk c-GaAs and c-Si in the range from 0 to 1000 K are in good overall agreement with highly accurate ellipsometric measurements. The implementation of the method resolves a serious discrepancy in energy and line shape between experiment and the latest optical models, all of which neglect lattice dynamics, and provides information on the indirect gap and indirect optical transitions in c-Si. For a-Si:H, the calculated temperature dependent optical response combined with the vibrational spectroscopy provides detailed insight into electronic, dynamical properties, and stability of this important prototypical amorphous semiconductor material. At semiconductor surfaces, dynamical effects are expected to be even more pronounced due to reduced atom coordination and reconstruction. This is demonstrated for C(111) 2 x 1, an intensively studied but controversial surface of the quantum diamond crystal. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  5. Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg


    We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

  6. Bulk etch rate measurements and calibrations of CR39 and Makrofol nuclear track detectors

    CERN Document Server

    Togo, V


    We developed a new method for determining the bulk etch rate velocity based on both cone height and base diameter measurements of the etched tracks. This method is applied here for the calibration of CR39 and Makrofol nuclear track detectors exposed to 158 A GeV In^{49+} and Pb^{82+} ions, respectively. For CR39 the peaks corresponding to indium ions and their different fragments are well separated from Z/beta = 7 to 49: the detection threshold is at REL ~ 50 MeV cm^2 g^{-1}, corresponding to a nuclear fragment with Z/beta = 7. The calibration of Makrofol with Pb^{82+} ions has shown all peaks due to lead ions and their fragments from Z/beta ~ 51 to 83 (charge pickup). The detection threshold of Makrofol is at REL ~ 2700 MeV cm^2 g^{-1}, corresponding to a nuclear fragment with Z/beta = 51.

  7. Thermodynamic states and phase diagrams for bulk-incoherent, bulk-coherent, and epitaxially-coherent semiconductor alloys: Application to cubic (Ga,In)N (United States)

    Liu, Jefferson Z.; Zunger, Alex


    The morphology and microstructure of A1-xBxC semiconductor alloys depend on the type of thermodynamic states established during growth. We distinguish three main cases: (i) bulk-incoherent structures occur when the alloy grows without being coherent with an underlying substrate and when each of the possible alloy species—phase separated AC and BC constituents, random A1-xBxC alloy, or ordered (AC)n/(BC)m structures—maintain their own lattice structures and lattice constants, giving up mutual coherence. Bulk incoherence is common in thick films with sufficient dislocations. For cubic (Ga,In)N, bulk-incoherent structures are found to have a positive excess enthalpy ΔHbulkincoh>0 and, thus, to phase separate. (ii) Bulk-coherent structures occur when the alloy grows without being coherent with a substrate, but each of the possible species internal to the alloy film is forced to be coherent with the film matrix. Thus, the constituents AC -rich and BC -rich solid solution phases share the same lattice structure at their interface, leading to internal strain that destabilizes the AC+BC separated constituents. This can expose the intermediate (AC)n/(BC)m ordered phases as stable structures with respect to the strained constituents, i.e., ΔHbulkcohdislocations is inhibited, e.g., small size precipitates in the alloy matrix. For cubic (Ga,In)N alloy, we find that the coherent ground state phases are three ordered superlattice structures: (InN)2/(GaN)2 (=chacolpyrite) , (InN)3/(GaN)1 , and (InN)4/(GaN)1 , along (201) [and its cubic symmetry equivalent, i.e., (102), (210), etc.] crystal direction. (iii) Epitaxially coherent structures occur when the alloy is made coherent with an underlying substrate, e.g., in thin film pseudomorphic growth. Depending on the substrate, the formation enthalpy ΔHepicubic (Ga,In)N grown on GaN (001) substrate, we find that the stablest epitaxial phases are chalcopyrite and the (InN)4/(GaN)1 superlattice along the (210) crystal direction

  8. Shubnikov-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI

    Energy Technology Data Exchange (ETDEWEB)

    Bell, C.; Bahramy, M.S.; Murakawa, H.; Checkelsky, J.G.; Arita, R.; Kaneko, Y.; Onose, Y.; Nagaosa, N.; Tokura, Y.; Hwang, H.Y.


    Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.

  9. Basic processes and scintillator and semiconductor detectors; Des processus de base aux detecteurs scintillateurs et semi-conducteurs

    Energy Technology Data Exchange (ETDEWEB)

    Bourgeois, C. [Paris-11 Univ., 91 - Orsay (France). Inst. de Physique Nucleaire]|[Paris-7 Univ., 75 (France)


    In the following course, the interaction of heavy charged particles, electrons and {Gamma} with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs.

  10. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)


    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  11. Characterization of new semiconductor detectors for x-ray tomography in the ASDEX Upgrade Tokamak and its generalized physics interpretations

    Energy Technology Data Exchange (ETDEWEB)

    Cho, T.; Hirata, M.; Kohagura, J.; Kanke, S.; Takahashi, K.; Sakamoto, Y.; Okamura, T.; Yatsu, K.; Tamano, T. [Plasma Research Centre, University of Tsukuba, Ibaraki 305 (Japan); Hirano, K.; Maezawa, H. [National Institute for High Energy Physics, Ibaraki 305 (Japan); Tanaka, S. [Fukui National College of Technology, Fukui 916 (Japan); Bessenrodt-Weberpals, M. [Max-Planck-Institut Fuer Plasmaphysik, Garching (Germany)


    The energy response of a new semiconductor detector in the ASDEX Upgrade Tokamak for plasma x-ray tomography studies is characterized using synchrotron radiation from a 2.5 GeV positron storage ring at the National Institute for High Energy Physics in Japan. This international collaborating research clarifies a fairly good agreement between the x-ray energy response data and our recently proposed theoretical predictions for such a semiconductor x-ray-detector response. The x-ray response for several positions on the active area of the detector unit is studied; a good uniformity observed guarantees that the detector can employ any sized and shaped collimator for the x-ray tomography regardless of any correction factor coming from the response nonuniformity on the detector active area. Operational conditions of the detector for the ASDEX Upgrade plasma diagnostics are optimized using its capacitance measurements as a function of an applied bias as well as the numerical evaluations of the detector response; these are also directly verified by the synchrotron-radiation experiments. {copyright} {ital 1997 American Institute of Physics.}

  12. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Roecker, Caleb Daniel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schirato, Richard C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

  13. Bulk Crystal Growth, and High-Resolution X-ray Diffraction Results of LiZnAs Semiconductor Material (United States)

    Montag, Benjamin W.; Reichenberger, Michael A.; Sunder, Madhana; Ugorowski, Philip B.; Nelson, Kyle A.; Henson, Luke C.; McGregor, Douglas S.


    LiZnAs is being explored as a candidate for solid-state neutron detectors. The compact form, solid-state device would have greater efficiency than present day gas-filled 3He and 10BF3 detectors. Devices fabricated from LiZnAs having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. The 6Li( n, t)4He reaction yields a total Q-value of 4.78 MeV, an energy larger than that of the 10B reaction, which can easily be identified above background radiations. LiZnAs material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace (Montag et al. in J Cryst Growth 412:103, 2015). The raw synthesized LiZnAs was purified by a static vacuum sublimation in quartz (Montag et al. in J Cryst Growth 438:99, 2016). Bulk crystalline LiZnAs ingots were grown from the purified material with a high-temperature Bridgman-style growth process described here. One of the largest LiZnAs ingots harvested was 9.6 mm in diameter and 4.2 mm in length. Samples were harvested from the ingot and were characterized for crystallinity using a Bruker AXS Inc. D8 AXS Inc. D2 CRYSO, energy dispersive x-ray diffractometer, and a Bruker AXS Inc. D8 DISCOVER, high-resolution x-ray diffractometer equipped with molybdenum radiation, Gobel mirror, four bounce germanium monochromator and a scintillation detector. The primary beam divergence was determined to be 0.004°, using a single crystal Si standard. The x-ray based characterization revealed that the samples nucleated in the (110) direction and a high-resolution open detector rocking curve recorded on the (220) LiZnAs yielded a full width at half maximum (FWHM) of 0.235°. Sectional pole figures using off-axis reflections of the (211) LiZnAs confirmed in-plane ordering, and also indicated the presence of multiple

  14. Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach (United States)

    Jiang, J. H.; Wu, M. W.


    Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron-nonmagnetic-impurity, electron-phonon, electron-electron, electron-hole, and electron-hole exchange (the Bir-Aronov-Pikus mechanism) scatterings are explicitly included. The Elliott-Yafet mechanism is also fully incorporated. This approach offers a way toward thorough understanding of electron spin relaxation both near and far away from the equilibrium in the metallic regime. The dependences of the spin relaxation time on electron density, temperature, initial spin polarization, photo-excitation density, and hole density are studied thoroughly with the underlying physics analyzed. We find that these dependences are usually qualitatively different in the nondegenerate and degenerate regimes. In contrast to the previous investigations in the literature, we find that: (i) In n -type materials, the Elliott-Yafet mechanism is less important than the D’yakonov-Perel’ mechanism, even for the narrow band-gap semiconductors such as InSb and InAs. (ii) The density dependence of the spin relaxation time is nonmonotonic and we predict a peak in the metallic regime in both n -type and intrinsic materials. (iii) In intrinsic materials, the Bir-Aronov-Pikus mechanism is found to be negligible compared with the D’yakonov-Perel’ mechanism. We also predict a peak in the temperature dependence of spin relaxation time which is due to the nonmonotonic temperature dependence of the electron-electron Coulomb scattering in intrinsic materials with small initial spin polarization. (iv) In p -type III-V semiconductors, the Bir-Aronov-Pikus mechanism dominates spin relaxation in the low-temperature regime only when the photoexcitation density is low. When the photoexcitation density is high, the Bir-Aronov-Pikus mechanism can be comparable with the D’yakonov-Perel’ mechanism only in the moderate

  15. The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.


    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  16. Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Y.H.; Gilmer, G.H.; Roland, C.; Silverman, P.J.; Buratto, S.K.; Cheng, J.Y.; Fitzgerald, E.A.; Kortan, A.R.; Schuppler, S.; Marcus, M.A.; Citrin, P.H. (AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States) Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States))


    Changes in surface roughness have been studied as a function of bulk compressive and tensile strains (biaxial in the plane of the sample surface) in thin films of compositionally uniform and dislocation-free Ge[sub 0.5]Si[sub 0.5]. A pronounced surface roughness is observed only for films under compressive strains exceeding 1.4%. Molecular dynamics simulations show that this striking result has its origin in the strain-induced lowering of surface step free energies.

  17. Transport Imaging: Developing an Optical Technique to Characterize Bulk Semiconductor Materials for Next Generation Radiation Detectors (United States)


    35 Figure 15. Mathcad Simulation for L=50 mμ Integrated with D=10, 20, 30, 40, and 50 mμ...36 Figure 16. Mathcad Simulation for L=5 mμ Integrated with D=10, 20, 30, 40...related numerically, as they can no longer be related analytically. The Mathcad integration model provides a way to calculate and integrate the 3D

  18. Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP

    CERN Document Server

    Dubecky, F; Necas, V; Sekacova, M; Fornari, R; Gombia, E; Bohácek, P; Krempasky, M; Pelfer, P G


    In this work, bulk semi-insulating (SI) InP wafers of four various producers have been used for the fabrication of radiation detectors. The tested detectors were prepared starting from the different materials in just one run in order to be sure that their performances were not influenced by technological processes. On one type of material various electrode technologies were used with the aim to analyze their role on the detector performances. The fabricated detectors were tested for detection performance by the sup 2 sup 4 sup 1 Am and sup 5 sup 7 Co gamma-ray sources at below room temperature. The best detector was calibrated and tested also using sup 1 sup 3 sup 3 Ba and sup 1 sup 3 sup 7 Cs gamma sources. The best detector gives an energy resolution of 7 keV FWHM and a charge collection efficiency (CCE) of 82% (59.5 keV photopeak) at a temperature of 216 K. According to our knowledge, these results are the best which have been obtained with InP radiation detectors till now. The operation of SI InP detector...

  19. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A


    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  20. Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Faiz; Xu, Sun; Mutha, Dinesh Kumar Baid; Oxland, Richard K.; Johnson, Nigel P.; Banerjee, Abhishek; Wasige, Edward [University of Glasgow, Department of Electronics and Electrical Engineering, Glasgow (United Kingdom); Watson, Ian M. [University of Strathclyde, Wolfson Centre, Institute of Photonics, Glasgow (United Kingdom)


    We describe experiments investigating the quality of ohmic contacts to both bulk GaN and to III-nitride heterostructures. Titanium-based contacts were investigated to assess the role of intermixing and surface impurities for contact formation to n-type GaN. Direct contact to the two-dimensional electron gas in GaN/AlGaN heterostructures was also studied. These contacts were made by photochemical etching of the samples to expose the heterointerface. It was observed that even in the latter case contact annealing leads to a lower contact resistance by consuming surface contaminants and promoting beneficial interfacial reactions. Various passivation techniques were tried to reduce surface leakage current between contact pads and PECVD-deposited silicon nitride was found to be the best material for this application. (orig.)

  1. Localized photovoltaic investigations on organic semiconductors and bulk heterojunction solar cells. (United States)

    Kollender, Jan Philipp; Gasiorowski, Jacek; Sariciftci, Niyazi Serdar; Mardare, Andrei Ionut; Hassel, Achim Walter


    Newly synthesized organic electronics materials are often available in submicrogram amounts only. Photoelectrochemical scanning droplet cell microscopy is a powerful method that allows a comprehensive characterisation of such small amounts including oxidation, reduction potentials, doping, determination of charge carriers, band gap, charge capacity, over-oxidation sensitivity and many more. Localized photoelectrochemical characterization of the poly[4,8-bis-substituted-benzo[1,2-b:4,5-b0]dithiophene-2,6-diyl-alt-4-substituted-thieno [3,4-b] thiophene-2,6-diyl] (PBDTTT-c) and PBDTTT-c:PCBM bulk heterojunction was performed using photoelectrochemical scanning droplet cell microscopy (PE-SDCM). The optical properties and the real and imaginary part of the dielectric function, of the polymer were determined using spectroscopic ellipsometry. The photoelectrochemical characterizations were performed in a three and two electrode configuration of PE-SDCM under laser and white light illumination. The effect of illumination was characterized using dark/illumination sequences. The stability of the photocurrent was studied using longer term (600 s) illumination. Finally the effect of cell configuration and illumination conditions on the photovoltage was studied.

  2. Development of neutron/gamma generators and a polymer semiconductor detector for homeland security applications (United States)

    King, Michael Joseph

    -energetic gamma generators that operate at low-acceleration energies and leverage neutron generator technologies. The dissertation focused on the experimental characterization of the generator performance and involved MCNPX simulations to evaluate and analyze the experimental results. The emission of the 11.7 MeV gamma-rays was observed to be slightly anisotropic and the gamma yield was measured to be 2.0*105 gamma/s-mA. The lanthanum hexaboride target suffered beam damage from a high power density beam; however, this may be overcome by sweeping the beam across a larger target area. The efficient detection of fast neutrons is vital to active interrogation techniques for the detection of both SNM and explosives. Novel organic semiconductors are air-stable, low-cost materials that demonstrate direct electronic particle detection. As part of the development of a pi-conjugated organic polymer for fast neutron detection, charge generation and collection properties were investigated. By devising a dual, thin-film detector test arrangement, charge collection was measured for high energy protons traversing the dual detector arrangement that allowed the creation of variable track lengths by tilting the detector. The results demonstrated that an increase in track length resulted in a decreased signal collection. This can be understood by assuming charge carrier transport along the track instead of along the field lines, which was made possible by the filling of traps. However, this charge collection mechanism may be insufficient to generate a useful signal. This dissertation has explored the viability of a new generation of radiation sources and detectors, where the newly developed ion source technologies and prototype generators will further enhance the capabilities of existing threat detection systems and promote the development of cutting-edge detection technologies.

  3. Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

    CERN Document Server

    Moscatelli, F; Morozzi, A; Mendicino, R; Dalla Betta, G F; Bilei, G M


    In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2×1016 1 MeV equivalent n/cm2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.

  4. Improvement of energy spectrum characteristics of CdZnTe semiconductor detector with a digital-analog fusion method

    CERN Document Server

    Mardiyanto, M P; Sakai, H; Kawarabayashi, J; Iguchi, T


    We present a new application of a 'Fusion Method' to improve gamma-ray energy spectrum characteristics of a CdZnTe semiconductor detector. A digital and an analog system are simultaneously applied for the detector output; The digital system digitizes the signal pulse shapes for pattern recognition based on a neural network algorithm. The analog measures the signal pulse heights with a conventional analog system. The digital and the analog output data are fused and then used for improvement of the energy spectrum characteristics, i.e. the photopeak area, the peak-to-valley ratio, and the FWHM of photopeaks.

  5. Comparison and limitations of three different bulk etch rate measurement methods used for gamma irradiated PM-355 detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fazal-ur-Rehman E-mail:; Abu-Jarad, F.; Al-Jarallah, M.I.; Farhat, M


    Samples of Nuclear Track Detectors (PM-355) were exposed to high gamma doses from 1x10{sup 5} Gy (10 Mrad) up to 1.2x10{sup 6} Gy (120 Mrad) at an incremental dose of 1x10{sup 5} Gy (10 Mrad). The gamma source was a 9.03 PBq (244 kCi) Co-60 source used for sterilization of medical syringes. The bulk etch rate (V{sub b}) was measured for various high gamma doses by three different methods: 1--thickness change method; 2--mass change method; 3--fission track diametric method. The study gives a comparison and limitations of these three methods used for bulk etch rate measurements in the detectors as a function of high gamma doses. The track etch rate (V{sub t}) and the sensitivity (V) of the detector were also measured using the fission track diametric method. It was observed that V{sub b} increases with the increase of the gamma absorbed dose at a fixed etching time in each bulk etch measuring method. The bulk etch rate decreases exponentially with the etching time at a fixed gamma absorbed dose in all three methods. The thickness change and mass change methods have successfully been applied to measure V{sub b} at higher gamma doses up to 1.2x10{sup 6} Gy (120 Mrad). The bulk etch rate determined by the mass change and thickness change methods was almost the same at a certain gamma dose and etching time whereas it was quite low in the case of the fission track diametric method due to its limitations at higher doses. Also in this method it was not possible to measure the fission fragment track diameters at higher doses due to the quick disappearance of the fission tracks and therefore the V{sub b} could not be estimated at higher gamma doses.

  6. Diagnostic analysis of silicon strips detector readout in the ATLAS Semi-Conductor Tracker module production

    CERN Document Server

    Ciocio, Alessandra


    The ATLAS Semi-Conductor Tracker (SCT) Collaboration is currently in the production phase of fabricating and testing silicon strips modules for the ATLAS detector at the Large Hadron Collider being built at the CERN laboratory in Geneva, Switzerland. A small but relevant percentage of ICs developed a new set of defects after being mounted on hybrids that were not detected in the wafer screening. To minimize IC replacement and outright module failure, analysis methods were developed to study IC problems during the production of SCT modules. These analyses included studying wafer and hybrid data correlations to finely tune the selection of ICs and tests to utilize the ability to adjust front-end parameters of the IC in order to reduce the rejection and replacement rate of fabricated components. This paper will discuss a few examples of the problems encountered during the production of SCT hybrids and modules in the area of ICs performance, and will demonstrate the value of the flexibility built into the ABCD3T ...

  7. Calibration of semiconductor detectors in the 200-8500 keV range at VNIIM. (United States)

    Tereshchenko, Evgeny E; Moiseev, Nikolay


    At the ionising radiation department of the D.I. Mendeleyev Institute for Metrology, a semiconductor detector was calibrated in the energy range 200-8500 keV using (n,2γ) and (n,γ) reactions. Separate cylindrical targets (77 mm diameter and 10mm height) were made from mercuric sulphate, sodium chloride and metallic titanium. A (252)Cf spontaneous fission neutron source, placed in 150 mm diameter polyethylene ball, was used to generate thermal neutrons. The optimal target dimensions were determined taking into account the thermal neutron cross-sections and gamma-radiation attenuations in the target materials. The influence of the background radiation induced by neutrons from the walls, floors and ceilings was also taken into account. The shapes of the efficiency curves for point and volume sources in the 200-8500 keV range have been investigated. The experimental results are in good agreement with Monte-Carlo calculations. The emission rate of the 6.13 MeV photons from a (238)Pu-(13)C source was determined with an expanded uncertainty, U(c), of 10% (k=2). Copyright © 2012 Elsevier Ltd. All rights reserved.

  8. Semiconductor physics

    CERN Document Server

    Böer, Karl W


    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  9. Photoprecursor Approach Enables Preparation of Well-Performing Bulk-Heterojunction Layers Comprising a Highly Aggregating Molecular Semiconductor. (United States)

    Suzuki, Mitsuharu; Yamaguchi, Yuji; Takahashi, Kohei; Takahira, Katsuya; Koganezawa, Tomoyuki; Masuo, Sadahiro; Nakayama, Ken-ichi; Yamada, Hiroko


    Active-layer morphology critically affects the performance of organic photovoltaic cells, and thus its optimization is a key toward the achievement of high-efficiency devices. However, the optimization of active-layer morphology is sometimes challenging because of the intrinsic properties of materials such as strong self-aggregating nature or low miscibility. This study postulates that the "photoprecursor approach" can serve as an effective means to prepare well-performing bulk-heterojunction (BHJ) layers containing highly aggregating molecular semiconductors. In the photoprecursor approach, a photoreactive precursor compound is solution-deposited and then converted in situ to a semiconducting material. This study employs 2,6-di(2-thienyl)anthracene (DTA) and [6,6]-phenyl-C71-butyric acid methyl ester as p- and n-type materials, respectively, in which DTA is generated by the photoprecursor approach from the corresponding α-diketone-type derivative DTADK. When only chloroform is used as a cast solvent, the photovoltaic performance of the resulting BHJ films is severely limited because of unfavorable film morphology. The addition of a high-boiling-point cosolvent, o-dichlorobenzene (o-DCB), to the cast solution leads to significant improvement such that the resulting active layers afford up to approximately 5 times higher power conversion efficiencies. The film structure is investigated by two-dimensional grazing-incident wide-angle X-ray diffraction, atomic force microscopy, and fluorescence microspectroscopy to demonstrate that the use of o-DCB leads to improvement in film crystallinity and increase in charge-carrier generation efficiency. The change in film structure is assumed to originate from dynamic molecular motion enabled by the existence of solvent during the in situ photoreaction. The unique features of the photoprecursor approach will be beneficial in extending the material and processing scopes for the development of organic thin-film devices.

  10. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    CERN Document Server

    Cho, T; Kohagura, J; Hirata, M; Minami, R; Watanabe, H; Sasuga, T; Nishizawa, Y; Yoshida, M; Nagashima, S; Nakashima, Y; Ogura, K; Tamano, T; Yatsu, K; Miyoshi, S


    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO sub 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO sub 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availabi...

  11. The development of a high count rate neutron flux monitoring channel using silicon carbide semiconductor radiation detectors (United States)

    Reisi Fard, Mehdi

    In this dissertation, a fast neutron flux-monitoring channel, which is based on the use of SiC semiconductor detectors is designed, modeled and experimentally evaluated as a power monitor for the Gas Turbine Modular Helium Reactors. A detailed mathematical model of the SiC diode detector and the electronic processing channel is developed using TRIM, MATLAB and PSpice simulation codes. The flux monitoring channel is tested at the OSU Research Reactor. The response of the SiC neutron-monitoring channel to neutrons is in close agreement to simulation results. Linearity of the channel response to thermal and fast neutron fluxes, pulse height spectrum of the channel, energy calibration of the channel and the detector degradation in a fast neutron flux are presented. Along with the model of the neutron monitoring channel, a Simulink model of the GT-MHR core has been developed to evaluate the power monitoring requirements for the GT-MHR that are most demanding for the SiC diode power monitoring system. The Simulink model is validated against a RELAP5 model of the GT-MHR. This dyanamic model is used to simulate reactor transients at the full power and at the start up, in order to identify the response time requirements of the GT-MHR. Based on the response time requirements that have been identified by the Simulink model and properties of the monitoring channel, several locations in the central reflector and the reactor cavity are identified to place the detector. The detector lifetime and dynamic range of the monitoring channel at the detector locations are calculated. The channel dynamic range in the GT-MHR central reflector covers four decades of the reactor power. However, the detector does not survive for a reactor refueling cycle in the central reflector. In the reactor cavity, the detector operates sufficiently long; however, the dynamic range of the channel is smaller than the dynamic range of the channel in the central reflector.

  12. Theoretical investigation of the excitonic semiconductor response for varying material thickness: Transition from quantum well to bulk

    DEFF Research Database (Denmark)

    Bischoff, Svend; Knorr, A; Koch, S.W.


    For semiconductor slabs with thicknesses varying from the two-dimensional to the three-dimensional limit the linear optical response is calculated numerically by solving the semiconductor Maxwell-Bloch equations. For short-pulse excitation the spatiotemporal dynamics of the electronic mode...

  13. The off-detector opto-electronics for the optical links of the ATLAS Semiconductor Tracker and Pixel detector

    CERN Document Server

    Chu, M L; Su, D S; Teng, P K; Goodrick, M; Kundu, N; Weidberg, T; French, M; MacWaters, C P; Matheson, J


    The off-detector part of the optical links for the ATLAS SCT and Pixel detectors is described. The VCSELs and p-i-n diodes used and the associated ASICs are described. A novel array packaging technique is explained and an analysis of the performance of the arrays and the overall system performance is given. The proposed procedure for the set-up of the optical links in ATLAS is described.

  14. Design and performance of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor tracker

    CERN Document Server

    Dabrowski, W; Buttar, C M; Cindro, V; Clarks, A G; Dawson, I; Dorfan, D; Dubbs, T; Falconer, N; French, M; Greenall, A; Grillo, A A; Happer, R; Jarron, Pierre; Kaplon, J; Kudlaty, J; Kramberger, G; Lacasta, C; La Marra, D; Macina, Daniela; Mandic, I; Mikuz, M; Meddeler, G; Milgrome, O; Niggli, H; Phillips, P W; Roe, S; Smith, A; Spieler, H; Spencer, E; Szczygiel, R; Weilhammer, Peter; Wolter, M; Zsenei, A


    The ABCD design is a single chip implementation of the binary readout architecture for silicon strip detectors in the ATLAS semiconductor tracker. The prototype chip has been manufactured successfully in the DMILL process. In the paper we present the design of the chip and the measurement results. The basic analogue performance of the ABCD design has been evaluated using a prototype SCT module equipped with the ABCD chips. The digital performance has been evaluated using a general purpose IC tester. The measurements confirmed that all blocks of the ABCD design are fully functional and the chips meet all basic requirements of the SCT. (7 refs).

  15. Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor (United States)

    Wang, Weiyang; Xu, Lei; Wu, Bo; Zhang, Sha; Wei, Xiangfei


    The influences of intense terahertz laser and magnetic fields on shallow-donor states in GaAs bulk semiconductors in the Faraday geometry are studied theoretically in the framework of the effective-mass approximation. The interaction between the laser field and the semiconductor is treated nonperturbatively by solving analytically the time-dependent Schrödinger equation in which the two external fields are included exactly. In the nonresonant region, we have found that the binding and transition energies decrease with increasing laser-field intensity or decreasing laser-field frequency, and the binding energy increases with magnetic field. For relatively low radiation levels, the transition energy first slowly decreases with increasing magnetic field, but after a critical value, it rapidly increases with increasing magnetic field. However, it slowly decreases with magnetic field when the laser-field intensity is strong enough. Furthermore, in the vicinity of the resonant regime, the oscillatory behaviours of the binding and transition energies with laser-field frequency and magnetic field are observed. These results obtained indicate the possibility of manipulating the shallow impurity states in semiconductor by changing the intense laser-field frequency and intensity and the magnetic field, which gives a new degree of freedom in semiconductor device application.

  16. Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    Directory of Open Access Journals (Sweden)

    Bijuan Chen


    Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  17. A combined surface and bulk TCAD damage model for the analysis of radiation detectors operating at HL-LHC fluences (United States)

    Morozzi, A.; Passeri, D.; Moscatelli, F.; Dalla Betta, G.-F.; Bilei, G. M.


    In this work we present the development and the application of a new TCAD modelling scheme to simulate the effects of radiation damage on silicon radiation detectors at the very high fluence levels expected at High Luminosity LHC (up to 2 × 1016 1MeV n/cm2). In particular, we propose a combined approach for the analysis of the surface effects (oxide charge build-up and interface trap states introduction) as well as bulk effects (deep level traps and/or recombination centers introduction). Experimental measurements have been carried out aiming at: i) extraction from simple test structures of relevant parameters to be included within the TCAD model and ii) validation of the new modelling scheme through comparison with measurements of different test structures (e.g. different technologies) before and after irradiation. The good agreements between experimental measurements and simulation findings foster the suitability of the TCAD modelling approach as a predictive tool for investigating the radiation detector behavior at different fluences and operating conditions. This would allow the design and optimization of innovative 3D and planar silicon detectors for future HL-LHC High Energy Physics experiments.

  18. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M


    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  19. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.


    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  20. Operational Experience of the ATLAS SemiConductor Tracker and Pixel Detector

    CERN Document Server

    Robinson, Dave; The ATLAS collaboration


    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  1. Position sensitive semiconductor detectors for 0.5 MeV gamma-rays (United States)

    Dusi, W.; Caroli, E.; Di Cocco, G.; Donati, A.; Landini, G.; Stephen, J. B.; Casali, F.; Baldazzi, G.; Chirco, P.; Rossi, M.


    A small prototype cadmium telluride (CdTe) detector optimized for the detection of gamma-rays having an energy of the order of 500 keV was designed. This detector was arranged as an array of 5x5 CdTe crystals, each having dimensions of 2x2x10 cu mm, and was constructed primarily in order to verify its technical feasibility and performances. The initial aim in developing this type of detector was for use in space applications such as measurement of annihilation radiation (511 keV photons) from the galactic center and possibly from extragalactic objects as for example AGN's (Active Galactic Nucleus). Many other applications may also benefit from the use of CdTe position sensitive detectors, in linear or square configuration, such as nuclear medicine diagnostics, nondestructive testing in industrial quality assurance processes, and safety inspection and controls.

  2. Recent advances in the development of semiconductor detectors for very high luminosity colliders

    CERN Document Server

    Hartmann, Frank


    For the luminosity upgrade of the LHC, the SLHC, the tracking systems of the LHC experiments need to be replaced. A main concern is the extreme radiation hardness requirement up to $1 x 10^{16} cm^{-2}$ 1 MeV neutron equivalent. This paper describes an extract of recent results on radiation hardening technologies developed within the RD50 Collaboration ( [1] for the tracker upgrades. Silicon detectors have been designed and produced on n- and p-type wafers made by Float Zone, epitaxy and Czochralski technology. Their charge collection efficiency after proton, neutron and mixed irradiation has been studied. Novel detector concepts, as 3D detectors, have been designed, produced and studied as well. Radiation induced microscopic disorder has been also investigated and correlated with the performance degradation of irradiated detectors.

  3. Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)


    This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm2 of active detector area.

  4. A spin-coherent semiconductor photo-detector for quantum communication (United States)

    Vrijen, Rutger; Yablonovitch, Eli


    We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed photon polarizations excite two superposed spin states. Entanglement of the electron spin state with the spin state of the remaining hole is prevented by using a single, non-degenerate initial valence band. The degeneracy of the valence band is lifted by the combination of strain and a static magnetic field. We give a detailed description of a semiconductor structure that transfers photon polarization to electron spin coherently, and allows electron spins to be stored and to be made available for quantum information processing.

  5. A spin-coherent semiconductor photo-detector for quantum communication


    Vrijen, Rutger; Yablonovitch, Eli


    We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed photon polarizations excite two superposed spin states. Entanglement of the electron spin state with the spin state of the remaining hole is prevented by using a single, non-degenerate initial valence band. The degeneracy of the valence band is lifted by the co...

  6. Characterization of a large CdZnTe coplanar quad-grid semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Theinert, Robert; Goessling, Claus; Kroeninger, Kevin [TU Dortmund, Experimentelle Physik IV, 44221 Dortmund (Germany)


    The COBRA collaboration aims to search for the neutrinoless double beta-decay of {sup 116}Cd. For this purpose, it operates a demonstrator setup with 64 CdZnTe detectors, each with a volume of 1 cm{sup 3}, at the LNGS underground laboratory in Italy. Double beta-decays are associated with half-lifes of more than 10{sup 25} years. To be sensitive to those half-lifes, a high detection efficiency and an ultra low-background setup are, among other aspects, important requirements. The usage of larger detectors is expected to improve the sensitivity. Detectors with a larger volume have a higher detection efficiency than the smaller ones. In addition, the background is reduced due to the lower surface-to-volume ratio. A large (2 x 2 x 1.5) cm{sup 3} CdZnTe detector with a new coplanar-grid design is characterized for applications in γ-ray spectroscopy and low-background operation. The four coplanar-grids on the anode side offer the possibility of separating the detector in four single sectors. The electric properties as well as the spectrometric performance, like energy response and resolution, are investigated in several measurements. Furthermore, studies concerning the operational stability and the possibility to identify multiple-scattered photons, are conducted.

  7. Soft x-ray intensity profile measurements of electron cyclotron heated plasmas using semiconductor detector arrays in GAMMA 10 tandem mirror

    Energy Technology Data Exchange (ETDEWEB)

    Minami, R., E-mail:; Imai, T.; Kariya, T.; Numakura, T.; Eguchi, T.; Kawarasaki, R.; Nakazawa, K.; Kato, T.; Sato, F.; Nanzai, H.; Uehara, M.; Endo, Y.; Ichimura, M. [Plasma Research Center, University of Tsukuba, Tsukuba, Ibaraki 305-8577 (Japan)


    Temporally and spatially resolved soft x-ray analyses of electron cyclotron heated plasmas are carried out by using semiconductor detector arrays in the GAMMA 10 tandem mirror. The detector array has 16-channel for the measurements of plasma x-ray profiles so as to make x-ray tomographic reconstructions. The characteristics of the detector array make it possible to obtain spatially resolved plasma electron temperatures down to a few tens eV and investigate various magnetohydrodynamic activities. High power electron cyclotron heating experiment for the central-cell region in GAMMA 10 has been started in order to reduce the electron drag by increasing the electron temperature.

  8. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)


    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  9. Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

    CERN Document Server

    Jakšic, Zoran


    The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

  10. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications. (United States)

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro


    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini


    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  12. SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, S [Wayne State University, Detroit, MI (United States); Kaye, W; Jaworski, J [H3D, Inc., Ann Arbor, MI (United States); He, Z [University of Michigan, Ann Arbor, MI (United States)


    Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinhole camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for

  13. Fluorocarbon evaporative cooling developments for the ATLAS pixel and semiconductor tracking detectors

    CERN Document Server

    Anderssen, E; Berry, S; Bonneau, P; Bosteels, Michel; Bouvier, P; Cragg, D; English, R; Godlewski, J; Górski, B; Grohmann, S; Hallewell, G D; Hayler, T; Ilie, S; Jones, T; Kadlec, J; Lindsay, S; Miller, W; Niinikoski, T O; Olcese, M; Olszowska, J; Payne, B; Pilling, A; Perrin, E; Sandaker, H; Seytre, J F; Thadome, J; Vacek, V


    Heat transfer coefficients 2-5.103 Wm-2K-1 have been measured in a 3.6 mm I.D. heated tube dissipating 100 Watts - close to the full equivalent power (~110 W) of a barrel SCT detector "stave" - over a range of power dissipations and mass flows in the above fluids. Aspects of full-scale evaporative cooling circulator design for the ATLAS experiment are discussed, together with plans for future development.

  14. Infrared detector based on interband transition of semiconductor quantum well within p-n junction (United States)

    Sun, Ling; Liu, Jie; Jia, Haiqiang; Wang, Wenxin; Wang, Lu; Chen, Hong


    Resonant excited carriers in quantum well will relax to the ground states and cannot escape from quantum wells to form photocurrent. However, it was recently observed that most of the photo-excited carriers in InGaAs/GaAs quantum wells within a p-n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells. The absorption coefficient of multiple quantum wells is also enhanced by a p-n junction. According to the phenomenon, a novel photon detector based on interband transition of strained InGaAs/GaAs quantum wells was fabricated. Without an anti-reflection layer, the external quantum efficiency up to 31% with only 100 nm absorption thickness was measured, corresponding an absorption coefficient of 3.7×104 cm-1 that is obviously higher than previously reported values. The room temperature detectivity of the device was 1.43×1013 cm Hz1/2 W-1. For strained InAsSb/GaSb quantum wells material system, the detector showed a narrow response range from 2.1 μm to 3.0 μm with a peak around 2.6 μm at 200 K and a wide response range from 3.5 μm to 5.7 μm. The photon detectors based on interband transition show great potential applications in infrared detection operating at high temperature.

  15. Optimizing the design and analysis of cryogenic semiconductor dark matter detectors for maximum sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Pyle, Matt Christopher [Stanford Univ., CA (United States)


    In this thesis, we illustrate how the complex E- field geometry produced by interdigitated electrodes at alternating voltage biases naturally encodes 3D fiducial volume information into the charge and phonon signals and thus is a natural geometry for our next generation dark matter detectors. Secondly, we will study in depth the physics of import to our devices including transition edge sensor dynamics, quasi- particle dynamics in our Al collection fins, and phonon physics in the crystal itself so that we can both understand the performance of our previous CDMS II device as well as optimize the design of our future devices. Of interest to the broader physics community is the derivation of the ideal athermal phonon detector resolution and it's T3 c scaling behavior which suggests that the athermal phonon detector technology developed by CDMS could also be used to discover coherent neutrino scattering and search for non-standard neutrino interaction and sterile neutrinos. These proposed resolution optimized devices can also be used in searches for exotic MeV-GeV dark matter as well as novel background free searches for 8GeV light WIMPs.

  16. Neural-based pile-up correction and ballistic deficit correction of X-ray semiconductor detectors using the Monte Carlo simulation and the Ramo theorem (United States)

    Kafaee, Mahdi; Moussavi Zarandi, Ali; Taheri, Ali


    Pile-up distortion is a common problem in many nuclear radiation detection systems, especially in high count rates. It can be solved by hardware-based pile-up rejections, but there is no complete pile-up elimination in this way. Additionally, the methods can lead to poor quantitative results. Generally, time characteristics of semiconductor detector pulses are different from Scintillator detector pulses due to ballistic deficit. Hence, pulse processing-based pile-up correction in the detectors should consider this specification. In this paper, the artificial neural network pile-up correction method is applied for silicon detector piled-up pulses. For this purpose, the interaction of photons with a silicon detector is simulated by the MCNP4c code and the pulse current is calculated by Ramo's theorem. In this approach, we use a sub-Nyquist frequency sampling. The results show that the proposed method is reliable for pile-up correction and ballistic deficit in semiconductor detectors. The technique is remarkable for commercial considerations and high-speed, real-time calculations.

  17. Apertureless scanning microscope probe as a detector of semiconductor laser emission

    Energy Technology Data Exchange (ETDEWEB)

    Dunaevskiy, Mikhail, E-mail: [Ioffe Institute, Saint-Petersburg 194021 (Russian Federation); National Research University of Information Technologies, Mechanics and Optics (ITMO), Saint-Petersburg 197101 (Russian Federation); Dontsov, Anton; Monakhov, Andrei [Ioffe Institute, Saint-Petersburg 194021 (Russian Federation); Alekseev, Prokhor; Titkov, Alexander [Ioffe Institute, Saint-Petersburg 194021 (Russian Federation); Saint Petersburg Electrotechnical University ' LETI,' Saint-Petersburg 197376 (Russian Federation); Baranov, Alexei; Girard, Paul; Arinero, Richard; Teissier, Roland [Institut d' Electronique du Sud, UMR 5214 UM2-CNRS, CC082, Université Montpellier 2, 34095 Montpellier Cedex 5 (France)


    An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.

  18. Nuclear myocardial perfusion imaging with a cadmium-telluride semiconductor detector gamma camera in patients with acute myocardial infarction. (United States)

    Fukushima, Yoshimitsu; Kumita, Shin-ichiro; Kawaguchi, Tsuneaki; Maruyama, Takatoshi; Kawasaki, Yoshiyuki; Shinkai, Yasuhiro


    Since myocardial perfusion imaging (MPI) with conventional sodium iodine (NaI) device has low spatial resolution, there have been some cases in which small structures such as non-transmural myocardial infarction could not be properly detected. The purpose of this study was to evaluate potential usefulness of cadmium-telluride (CdTe) semiconductor detector-based high spatial resolution gamma cameras in detecting myocardial infarction sites, especially non-transmural infarction. A total of 38 patients (mean age ± SD: 64 ± 21 year) who were clinically diagnosed with acute myocardial infarction were included. Twenty-eight cases of them were with ST segment elevation myocardial infarction (STEMI) and 10 cases with non-ST segment elevation myocardial infarction (NSTEMI). In all patients, myocardial perfusion single photon emission computed tomography images were acquired with Infinia (NaI device) and R1-M (CdTe device), and the images were compared concerning the detectability of acute myocardial infarction sites. The detection rates of the myocardial infarction site in cases with STEMI were 100% both by NaI and CdTe images. In cases with NSTEMI, detection rate by NaI images was 50%, while that of CdTe images was 100% (p = 0.033). The summed rest score (SRS) value derived from CdTe images was significantly higher than that from NaI images in cases with STEMI [NaI images: 12 (7-18) versus CdTe images: 14 (9-20)] (p cases with NSTEMI [NaI images: 2 (0-5) versus CdTe images: 6 (6-8)] (p = 0.006). These results indicate that MPI using CdTe-semiconductor device will provide a much more accurate assessment of acute myocardial infarction in comparison to current methods.

  19. International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016)

    CERN Document Server

    Rossi, Leonardo; PIXEL2016


    The workshop will cover various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics and Astrophysics, and for X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics, environmental control and construction techniques. Emerging technologies, such as monolithic and HV&HR CMOS, will also be treated. Will be published in:

  20. Biomedical imaging with the Medipix2 semiconductor detector at UniAndes (United States)

    Caicedo, I.; Avila, C.; Gomez, B.; Bula, C.; Roa, C.; Sanabria, J.


    A set-up for X-Ray Imaging was developed using a Medipix2 MXR detector, a PHYWE X-Ray Unit, and a Step Motor as sample holder. An equalization and raw acquisitions were also performed. As the Beam Hardening effect arose in the radiographies, it was necessary to correct the images through a Direct Thickness Calibration. The result was the acquisition of high resolution (~μm) images from 10 to 35 keV with small exposure times. After the characterization of the set-up, it was used to image motionless and living tissue. Its feasibility to image samples bigger than its sensitive part and to use it for vascular imaging was also studied. Some of the tests were validated using Monte Carlo simulations (ROSI). The high granularity of the detector makes it suitable for micro-CT. Medipix2 has a very fast response (~ hundreds of nanoseconds) and high sensibility. These features allow obtaining nearly in-vivo high resolution (55μm* 55μm) images.

  1. First Investigation on a novel 2D position sensitive semiconductor detector concept

    CERN Document Server

    Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I


    This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

  2. Quantum efficiency of a single microwave photon detector based on a semiconductor double quantum dot (United States)

    Wong, Clement H.; Vavilov, Maxim G.


    Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we consider a double quantum dot (DQD) capacitively coupled to a superconducting resonator that is driven by the microwave field of a superconducting transmission line. We analyze the DQD current response using input-output theory and show that the resonator-coupled DQD is a sensitive microwave single photon detector. Using currently available experimental parameters of DQD-resonator coupling and dissipation, including the effects of 1 /f charge noise and phonon noise, we determine the parameter regime for which incident photons are completely absorbed and near-unit ≳98 % efficiency can be achieved. We show that this regime can be reached by using very high quality resonators with quality factor Q ≃105 .

  3. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection (United States)


    due to metal catalysis and wet etching. Using the blackened SiGe/Si, MSM photodiodes were fabricated and tested. The lowering of reflection using a...MSM- Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred...Do not return it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6176 September 2012 MSM- Metal

  4. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    CERN Document Server

    Cesareo, R; Castellano, A


    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

  5. Shape analysis of current pulses delivered by semiconductor detectors: A new tool for fragmentation studies of high velocity atomic clusters and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Chabot, M. E-mail:; Della Negra, S.; Lavergne, L.; Martinet, G.; Wohrer-Beroff, K. E-mail:; Sellem, R.; Daniel, R.; Le Bris, J.; Lalu, G.; Gardes, D.; Scarpaci, J.A.; Desesquelle, P.; Lima, V


    Shape analyses of current pulses delivered by semiconductor detectors under impact of high velocity atomic clusters have been performed for the first time. We show in this paper that the shape of the current pulse depends sensitively on the cluster size. When the cluster is fragmented, the obtained signal is found to result from the sum of signals associated with individual fragment impacts so that recognition of the fragmentation pathway is made possible in an unambiguous way. Application to the extraction of the 29 fragmentation channels of neutral C{sub 9} clusters is presented.

  6. Shape analysis of current pulses delivered by semiconductor detectors: A new tool for fragmentation studies of high velocity atomic clusters and molecules

    CERN Document Server

    Chabot, M; Lavergne, L; Martinet, G; Wohrer-Beroff, K; Sellem, R; Daniel, R; Le Bris, J; Lalu, G; Gardes, D; Scarpaci, J A; Désesquelles, P; Lima, V


    Shape analyses of current pulses delivered by semiconductor detectors under impact of high velocity atomic clusters have been performed for the first time. We show in this paper that the shape of the current pulse depends sensitively on the cluster size. When the cluster is fragmented, the obtained signal is found to result from the sum of signals associated with individual fragment impacts so that recognition of the fragmentation pathway is made possible in an unambiguous way. Application to the extraction of the 29 fragmentation channels of neutral C sub 9 clusters is presented.

  7. Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

    CERN Multimedia

    Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Maneuski, D; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Marchiori, G; Gonella, L; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Oshea, V; Muenstermann, D; Holmkvist, C W; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Bomben, M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Villani, E G; Fox, H; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Chauveau, J; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Shepelev, A; Golubev, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Calderini, G; Briglin, D L; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T; Lange, J C


    The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

  8. Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors


    Khosroabadi, Akram A.; Gangopadhyay, Palash; Hernandez, Steven; Kim, Kyungjo; Peyghambarian, Nasser; Norwood, Robert A.


    We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO) st...

  9. Infrared detectors

    CERN Document Server

    Rogalski, Antonio


    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  10. Solution-processable low-molecular weight extended arylacetylenes: versatile p-type semiconductors for field-effect transistors and bulk heterojunction solar cells. (United States)

    Silvestri, Fabio; Marrocchi, Assunta; Seri, Mirko; Kim, Choongik; Marks, Tobin J; Facchetti, Antonio; Taticchi, Aldo


    We report the synthesis and characterization of a series of five extended arylacetylenes, 9,10-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-anthracene (A-P6t, 1), 9,10-bis-[(p-{[m,p-bis(hexyloxy) phenyl]ethynyl}phenyl)ethynyl]-anthracene (PA-P6t, 2), 4,7-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazole (BTZ-P6t, 5), 4,7-bis(5-{[m,p-bis(hexyloxy)phenyl]ethynyl}thien-2-yl)-2,1,3-benzothiadiazole (TBTZ-P6t, 6), and 7,7'-({[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazol-4,4'-ethynyl)-2,5-thiophene (BTZT-P6t, 7), and two arylvinylenes, 9,10-bis-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}-anthracene (A-P6d, 3), 9,10-bis-[(E)-(p-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}phenyl)vinyl]-anthracene (PA-P6d, 4). Trends in optical absorption spectra and electrochemical redox processes are first described. Next, the thin-film microstructures and morphologies of films deposited from solution under various conditions are investigated, and organic field-effect transistors (OFETs) and bulk heterojunction photovoltaic (OPV) cells fabricated. We find that substituting acetylenic for olefinic linkers on the molecular cores significantly enhances device performance. OFET measurements reveal that all seven of the semiconductors are FET-active and, depending on the backbone architecture, the arylacetylenes exhibit good p-type mobilities (mu up to approximately 0.1 cm(2) V(-1) s(-1)) when optimum film microstructural order is achieved. OPV cells using [6,6]-phenyl C(61)-butyric acid methyl ester (PCBM) as the electron acceptor exhibit power conversion efficiencies (PCEs) up to 1.3% under a simulated AM 1.5 solar irradiation of 100 mW/cm(2). These results demonstrate that arylacetylenes are promising hole-transport materials for p-channel OFETs and promising donors for organic solar cells applications. A direct correlation between OFET arylacetylene hole mobility and OPV performance is identified and analyzed.

  11. Purification and preparation of bismuth(III) iodide for application as radiation semiconductor detector; Purificacao e preparacao do cristal semicondutor de iodeto de bismuto para aplicacao como detector de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, Caue de Mello


    This study describes the experimental procedure of a BiI{sub 3} purification method powder, aiming a future application of these semiconductor crystals as room temperature radiation detector. The Repeated Vertical Bridgman Technique was applied for the purification, based on the melting and nucleation phenomena. An ampoule filled with a maximum of 25% by volume of BiI{sub 3} powder was mounted into the Bridgman furnace and vertically moved at a speed of 2 millimeters per hour, inside the furnace with programmed thermal gradient and temperature profile, at a temperature maximum of 530 deg C. The reduction of the impurities in the BiI{sub 3}, each purification, was analysed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work, for trace metal impurities. It was demonstrated that the Repeated Bridgman is effective to reduce the concentration of many impurities in BiI{sub 3}, such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI{sub 3} crystal purified twice and third times was similar to the BiI{sub 3} pattern. However, for BiI{sub 3} powder and purified once an intensity contribution of the BiOI was observed in the diffractograms. It is known that semiconductor detectors fabricated from high purity crystal exhibit significant improvement in their performance compared to those produced from low purity crystals. (author)


    Energy Technology Data Exchange (ETDEWEB)



    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the driR and induction regions. The former determines the ''geometrical'' width of the photopeak i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  13. Biggest semiconductor installed

    CERN Multimedia


    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  14. Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors (United States)

    Dulloo, A. R.; Ruddy, F. H.; Seidel, J. G.; Davison, C.; Flinchbaugh, T.; Daubenspeck, T.


    The ability of a silicon carbide radiation detector to measure neutron and gamma radiation levels in a TRIGA reactor's mixed neutron/gamma field was demonstrated. Linear responses to epicadmium neutron fluence rate (up to 3/spl times/10/sup 7/ cm/sup -2/ s/sup -1/) and to gamma dose rate (0.6-234 krad-Si h/sup -1/) were obtained with the detector. Axial profiles of the reactor core's neutron and gamma-ray radiation levels were successfully generated through sequential measurements along the length of the core. The SiC detector shows a high level of precision for both neutrons and gamma rays in high-intensity radiation environments-1.9% for neutrons and better than 0.6% for gamma rays. These results indicate that SiC detectors are well suited for applications such as spent fuel monitoring where measurements in mixed neutron/gamma fields are desired.

  15. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Czech Academy of Sciences Publication Activity Database

    Zajíček, J.; Burian, M.; Soukup, P.; Novák, Vladimír; Macko, M.; Jakůbek, J.


    Roč. 12, January (2017), č. článku P01015. ISSN 1748-0221 Institutional support: RVO:68378297 Keywords : Gamma camera * SPECT * PET PET/CT * coronary CT angiography (CTA) * Gamma detectors (scintillators, CZT, HPG, HgI etc) * multi-modality systems * pixelated detectors and associated VLSI electronics Subject RIV: JB - Sensors, Measurment, Regulation Impact factor: 1.220, year: 2016

  16. Radiation effects in semiconductors

    CERN Document Server


    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  17. Semiconductor radiation detection systems

    CERN Document Server


    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  18. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.


    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  19. Complementary Barrier Infrared Detector (United States)

    Ting, David Z.; Bandara, Sumith V.; Hill, Cory J.; Gunapala, Sarath D.


    The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified

  20. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG


    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  1. Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors. (United States)

    Khosroabadi, Akram A; Gangopadhyay, Palash; Hernandez, Steven; Kim, Kyungjo; Peyghambarian, Nasser; Norwood, Robert A


    We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO) structures, with feature sizes below 100 nm and a controlled surface architecture. The optical and electrical properties of these core shell electrodes, including the surface plasmon frequency, can be tuned by suitably changing the order and thickness of the dielectric layers. By varying the dimensions of the nanopillars, the surface plasmon wavelength of the nanopillar Ag can be tuned from 650 to 690 nm. Adding layers of ITO to the structure further shifts the resonance wavelength toward the IR region and, depending on the sequence and thickness of the layers within the structure, we show that such structures can be applied in sensing devices including enhancing silicon as a photodetection material.

  2. Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors

    Directory of Open Access Journals (Sweden)

    Akram A. Khosroabadi


    Full Text Available We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO structures, with feature sizes below 100 nm and a controlled surface architecture. The optical and electrical properties of these core shell electrodes, including the surface plasmon frequency, can be tuned by suitably changing the order and thickness of the dielectric layers. By varying the dimensions of the nanopillars, the surface plasmon wavelength of the nanopillar Ag can be tuned from 650 to 690 nm. Adding layers of ITO to the structure further shifts the resonance wavelength toward the IR region and, depending on the sequence and thickness of the layers within the structure, we show that such structures can be applied in sensing devices including enhancing silicon as a photodetection material.

  3. Micromegas in a bulk

    CERN Document Server

    Giomataris, Ioanis; Andriamonje, Samuel A; Aune, S; Charpak, Georges; Colas, P; Giganon, Arnaud; Rebourgeard, P C; Salin, P; Rebourgeard, Ph.


    In this paper we present a novel way to manufacture the bulk Micromegas detector. A simple process based on the PCB (Printed Circuit Board) technology is employed to produce the entire sensitive detector. Such fabrication process could be extended to very large area detectors made by the industry. The low cost fabrication together with the robustness of the electrode materials will make it extremely attractive for several applications ranging from particle physics and astrophysics to medicine

  4. Micromegas in a bulk

    Energy Technology Data Exchange (ETDEWEB)

    Giomataris, I. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France)]. E-mail:; De Oliveira, R. [CERN, Geneva (Switzerland); Andriamonje, S. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Aune, S. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Charpak, G. [CERN, Geneva (Switzerland); Colas, P. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Fanourakis, G. [Institute of Nuclear Physcis, NCSR Demokritos, Aghia Paraskevi 15310 (Greece); Ferrer, E. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Giganon, A. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Rebourgeard, Ph. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Salin, P. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France)


    In this paper, we present a novel way to manufacture the bulk Micromegas detector. A simple process based on the Printed Circuit Board (PCB) technology is employed to produce the entire sensitive detector. Such a fabrication process could be extended to very large area detectors made by the industry. The low cost fabrication together with the robustness of the electrode materials will make it attractive for several applications ranging from particle physics and astrophysics to medicine.

  5. In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment; Dosimetria in vivo com uso de detectores semicondutores e termoluminescentes aplicada ao tratamento de cancer de cabeca e pescoco

    Energy Technology Data Exchange (ETDEWEB)

    Viegas, Claudio Castelo Branco


    In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

  6. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    Energy Technology Data Exchange (ETDEWEB)

    James, Ralph (BNL Nonproliferation and National Security Department)


    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  7. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

    Directory of Open Access Journals (Sweden)

    Haoyang Cui


    Full Text Available The transient photovoltaic (PV characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  8. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas


    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  9. Pixel CdTe semiconductor module to implement a sub-MeV imaging detector for astrophysics (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Pellegrini, G.; Lozano, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.


    Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of nova and supernova explosions in X and gamma rays, with the use of space missions such as INTEGRAL, XMM-Newton and Swift. We have been also involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes, such as GRI, DUAL and e-ASTROGAM. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs). In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm, with a pixel pitch of 1mm x 1mm. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. An ohmic CdTe pixel detector has been characterised by means of 57Co, 133Ba and 22Na sources. Based on this, its spectroscopic performance and the influence of charge sharing is reported here. The pixel study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the pixel size selection.

  10. Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors

    CERN Document Server

    Zhong He; Whe, D


    During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The performance of both gamma-ray spectrometers were individually tested. The angular resolution and detection sensitivity of the imaging system were measured using both a point and a line-shaped 137 Cs radiation source. The measurement results are consistent with that obtained from Monte-Carlo simulations performed during the early phase of the project.

  11. Optical properties of bulk semiconductors and graphene/boron nitride: the Bethe-Salpeter equation with derivative discontinuity-corrected density functional energies

    DEFF Research Database (Denmark)

    Yan, Jun; Jacobsen, Karsten W.; Thygesen, Kristian S.


    through the BSE using the statically screened interaction evaluated in the random phase approximation. For a representative set of semiconductors and insulators we find excellent agreement with experiments for the dielectric functions, onset of absorption, and lowest excitonic features. For the two......-dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 and 0.7 eV, respectively, compared to freestanding h-BN. This reduction...

  12. Plasmonics-enabled metal-semiconductor-metal photodiodes for high-speed interconnects and polarization sensitive detectors (United States)

    Panchenko, Evgeniy; Cadusch, Jasper J.; James, Timothy D.; Roberts, Ann


    Metal-semiconductor-metal (MSM) photodiodes are commonly used in ultrafast photoelectronic devices. Recently it was shown that localized surface plasmons can sufficiently enhance photodetector capabilities at both infrared and visible wavelengths. Such structures are of great interest since they can be used for fast, broadband detection. By utilizing the properties of plasmonic structures it is possible to design photodetectors that are sensitive to the polarization state of the incident wave. The direct electrical readout of the polarization state of an incident optical beam has many important applications, especially in telecommunications, bio-imaging and photonic computing. Furthermore, the fact that surface plasmon polaritons can circumvent the diffraction limit, opens up significant opportunities to use them to guide signals between logic gates in modern integrated circuits where small dimensions are highly desirable. Here we demonstrate two MSM photodetectors integrated with aluminum nanoantennas capable of distinguishing orthogonal states of either linearly or circularly polarized light with no additional filters. The localized plasmon resonances of the antennas lead to selective screening of the underlying silicon from light with a particular polarization state. The non-null response of the devices to each of the basis states expands the potential utility of the photodetectors while improving precision. We also demonstrate a design of waveguide-coupled MSM photodetector suitable for planar detection of surface plasmons.

  13. Unsymmetrical donor–acceptor–donor–acceptor type indoline based organic semiconductors with benzothiadiazole cores for solution-processed bulk heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Wenqin Li


    Full Text Available Bulk heterojunction (BHJ solar cells based on small molecules have attracted potential attention due to their promise of conveniently defined structures, high absorption coefficients, solution process-ability and easy fabrication. Three D–A–D–A type organic semiconductors (WS-31, WS-32 and WS-52 are synthesized, based on the indoline donor and benzotriazole auxiliary acceptor core, along with either bare thiophene or rigid cyclopentadithiophene as π bridge, rhodanine or carbonocyanidate as end-group. Their HOMO orbitals are delocalized throughout the whole molecules. Whereas the LUMOs are mainly localized on the acceptor part of structure, which reach up to benzothiadiazole, but no distribution on indoline donor. The first excitations for WS-31 and WS-32 are mainly originated by electron transition from HOMO to LUMO level, while for WS-52, partly related to transition between HOMO and LUMO+1 level. The small organic molecules are applied as donor components in bulk heterojunction (BHJ organic solar cells, using PC61BM as acceptor material to check their photovoltaic performances. The BHJ solar cells based on blended layer of WS-31:PC61BM and WS-32:PC61BM processed with chloroform show overall photoelectric conversion efficiency (PCE of 0.56% and 1.02%, respectively. WS-32 based BHJ solar cells show a higher current density originated by its relatively larger driving force of photo-induced carrier in photo-active layer to LUMO of PC61BM. Keywords: Indoline donor, Unsymmetrical organic semiconductors, BHJ solar cells, Photovoltaic performances

  14. Analytical and numerical analysis of charge carriers extracted by linearly increasing voltage in a metal-insulator-semiconductor structure relevant to bulk heterojunction organic solar cells (United States)

    Yumnam, Nivedita; Hirwa, Hippolyte; Wagner, Veit


    Analysis of charge extraction by linearly increasing voltage is conducted on metal-insulator-semiconductor capacitors in a structure relevant to organic solar cells. For this analysis, an analytical model is developed and is used to determine the conductivity of the active layer. Numerical simulations of the transient current were performed as a way to confirm the applicability of our analytical model and other analytical models existing in the literature. Our analysis is applied to poly(3-hexylthiophene)(P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) which allows to determine the electron and hole mobility independently. A combination of experimental data analysis and numerical simulations reveals the effect of trap states on the transient current and where this contribution is crucial for data analysis.

  15. Emission detectors

    CERN Document Server

    Bolozdynya, Alexander I


    After decades of research and development, emission detectors have recently become the most successful instrumentation used in modern fundamental experiments searching for cold dark matter, and are also considered for neutrino coherent scattering and magnetic momentum neutrino measurement. This book is the first monograph exclusively dedicated to emission detectors. Properties of two-phase working media based on noble gases, saturated hydrocarbon, ion crystals and semiconductors are reviewed.

  16. The application of a semiconductor detector in the estimation of the effective dose in radiographic examination of the extremities

    CERN Document Server

    Eyden, A C


    15 energy dependent calibration coefficients formulated from the data gathered at the NRPB. The dose in air was then multiplied by the appropriate mass energy absorption coefficient for each particular tissue type and following a scatter correction factor the organ dose was calculated. ICRP weighting factors (1990, P68) were then applied to the organ and tissue doses to calculate the effective dose. The effective dose value was found to be 0.42 mu Sv for a male and 0.41 mu Sv for a female. The aim of this project was to measure the effective dose from radiographic examination of the ankle. Previous work investigating effective dose values resultant from extremity examinations has made estimations using computer simulations of scattering processes. To measure the effective dose, certain key pieces of apparatus were required. The dose levels within the body were in the order of 10 sup - sup 9 Gy and therefore an extremely sensitive x-ray detector was required. To estimate the effective dose, a specific set of o...

  17. Measurement of gamma-ray intensities of sup 2 sup 3 sup 1 Th using semiconductor detectors

    CERN Document Server

    Chatani, H


    Nuclide sup 2 sup 3 sup 1 Th was yielded by the sup 2 sup 3 sup 2 Th(n, 2n) reaction with neutron irradiation in the Kyoto University Reactor (KUR). Moreover, the thorium was purified chemically. Gamma-ray spectra of thorium have been measured using low-energy photon spectrometers and a high-purity germanium detector. Relative gamma-ray intensities ranging from 25 to 352 keV in the decay of sup 2 sup 3 sup 1 Th have been determined with satisfactory accuracy. The results are in very good agreement with those of earlier studies. We observe two new gamma-rays at 77.69 and 177.66 keV, whose intensities are found to be (0.063+-0.010)% and (0.00095+-0.00020)%, respectively, relative to that of 84.21 keV taken as 100%. Absolute intensity of 84.21 keV gamma-ray which is the most prominent one from the decay of sup 2 sup 3 sup 1 Th and that of 185.739 keV following the decay of sup 2 sup 3 sup 5 U are also determined from the secular equilibrium for sup 2 sup 3 sup 5 U- sup 2 sup 3 sup 1 Th. The results obtained in t...

  18. Bulk Heterojunction Solar Cells Based on Blends of Conjugated Polymers with II–VI and IV–VI Inorganic Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ryan Kisslinger


    Full Text Available Bulk heterojunction solar cells based on blends of quantum dots and conjugated polymers are a promising configuration for obtaining high-efficiency, cheaply fabricated solution-processed photovoltaic devices. Such devices are of significant interest as they have the potential to leverage the advantages of both types of materials, such as the high mobility, band gap tunability and possibility of multiple exciton generation in quantum dots together with the high mechanical flexibility and large molar extinction coefficient of conjugated polymers. Despite these advantages, the power conversion efficiency (PCE of these hybrid devices has remained relatively low at around 6%, well behind that of all-organic or all-inorganic solar cells. This is attributed to major challenges that still need to be overcome before conjugated polymer–quantum dot blends can be considered viable for commercial application, such as controlling the film morphology and interfacial structure to ensure efficient charge transfer and charge transport. In this work, we present our findings with respect to the recent development of bulk heterojunctions made from conjugated polymer–quantum dot blends, list the ongoing strategies being attempted to improve performance, and highlight the key areas of research that need to be pursued to further develop this technology.

  19. Spin physics in semiconductors

    CERN Document Server


    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  20. Mid-infrared two photon absorption sensitivity of commercial detectors (United States)

    Boiko, D. L.; Antonov, A. V.; Kuritsyn, D. I.; Yablonskiy, A. N.; Sergeev, S. M.; Orlova, E. E.; Vaks, V. V.


    We report on broad-band two-photon absorption (TPA) in several commercially available MIR inter-band bulk semiconductor photodetectors with the spectral cutoff in the range of 4.5-6 μm. The highest TPA responsivity of 2 × 10-5 A.mm2/W2 is measured for a nitrogen-cooled InSb photovoltaic detector. Its performance as a two-photon detector is validated by measuring the second-order interferometric autocorrelation function of a multimode quantum cascade laser emitting at the wavelength of 8 μm.

  1. Physics of semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prew, B.A.


    The properties of semiconductors which make them important in the electronic devices industry, and how these properties are controlled by doping, are described. The physics and applications of p-n and other junction devices, and of bulk effect devices are discussed. Avalanche devices, optical devices, solar cells, Schottky barriers, MOS devices, heterojunctions, photoconductors, and transferred electron devices are considered.

  2. Research on an FM/cw ladar system using a 64 × 64 InGaAs metal-semiconductor-metal self-mixing focal plane array of detectors. (United States)

    Gao, Jian; Sun, Jianfeng; Cong, Mingyu


    Frequency-modulated/continuous-wave imaging systems are a focal plane array (FPA) ladar architecture that is applicable to smart munitions, reconnaissance, face recognition, robotic navigation, etc. In this paper, we report a 64×64 pixel FPA ladar system we built using a 1550 nm amplified laser diode transmitter and an InAlAs/InGaAs metal-semiconductor-metal self-mixing detector array and the test results attained over the years it was constructed. Finally, we gained 4D imaging (3D range + 1D intensity) of the target with the range of 220 m.

  3. Double peak electric field distortion in heavily irradiated silicon strip detectors

    CERN Document Server

    Eremin, Vladimir; Roe, Shaun; Ruggiero, G; Verbitskaya, E


    Non-uniform distribution of the electric field outlined as double peak distortion (DPD) is considered for heavily irradiated silicon strip detectors, which were developed for the CERN-ATLAS semiconductor tracker. DPD originates from the non-uniform accumulation of electrons and holes from the bulk generated current that are captured by radiation induced defects: deep acceptors and donors with mid-gap energy levels. This corresponds to the formation of the low electric field region in the detector central part that consequently will delay charge collection. The electric field distributions at different reverse biases, fluences and detector operational temperatures are calculated using a one-dimensional Poisson equation as it was done earlier for pad detectors. It has been shown that due to the electric field focusing at the strips the DPD effect is more pronounced for strip detectors as compared to that in pad detectors. The double peak electric field distribution is evinced experimentally in current pulse res...

  4. Semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Tuchkevich, V.M.; Frenkel, V.Y.


    This text is a collection of papers devoted mainly to the results of the research work in the field of semiconductors. Topics include photovoltaic solar energy conversion, interacting excitons in germanium and silicon, chalcogenide vitreous semiconductors, optical cooling of the nuclear spin system in a semiconductor, photon drag of electrons in semiconductors, dielectric losses in crystals, light scattering from heavily doped semiconductors, and the capacity of an abrupt asymmetric p-n junction.

  5. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B


    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S


    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  7. Effect of radiation induced deep level traps on Si detector performance

    CERN Document Server

    Eremin, V; Li, Z


    The main factor, which leads to semiconductor detector degradation in high-energy physics experiments, is the introduction of lattice defects in the detector material produced by radiation. Based on the spectrum of radiation induced defects in the silicon bulk, the overview of effects and mechanisms responsible for the changes in the main detector parameters such as effective concentration of the space charge in the depleted region, space charge sign inversion, charge collection efficiency, and detector breakdown voltage are considered. Special attention is paid to the electric field distortion related with high concentration of radiation induced deep traps, which is the key question for the design of detectors operating at cryogenic temperature. In particular, the charge collection recovery at low temperature, often refereed as the Lazarus effect, and the limitation for the detection rate related to the polarization effect are considered.

  8. Gamma ray detector modules (United States)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)


    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  9. Pixel detectors

    CERN Document Server

    Passmore, M S


    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  10. In-vivo x-ray micro-imaging and micro-CT with the Medipix2 semiconductor detector at UniAndes (United States)

    Caicedo, I.; Avila, C.; Gomez, B.; Bula, C.; Roa, C.; Sanabria, J.


    This poster contains the procedure to obtain micro-CTs and to image moving samples using the Medipix2 detector, with its corresponding results. The high granularity of the detector makes it suitable for micro-CT. We used commercial software (Octopus) to do the 3D reconstruction of the samples in the first place, and we worked on modifying free reconstruction software afterwards. Medipix has a very fast response ( ~ hundreds of nanoseconds) and high sensibility. These features allow obtaining nearly in-vivo high resolution (55m * 55m) images. We used an exposure time of 0.1 s for each frame, and the resulting images were animated. The High Energy Physics Group at UniAndes is a member of the Medipix3 collaboration. Its research activities are focused on developing set-ups for biomedical applications and particle tracking using the Medipix2 and Timepix detectors, and assessing the feasibility of the Medipix3 detector for future applications.

  11. MWIR barrier infrared detectors with greater than 5μm cutoff using bulk InAsSb grown on GaSb substrates (United States)

    Baril, Neil; Brown, Alexander; Zuo, Daniel; Tidrow, Meimei; Loubychev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K.; Bandara, Sumith


    Mid-wavelength infrared photodetectors incorporated into a unipolar barrier architecture with a bulk InAsxSb1-x absorber and an AlSb barrier layer are demonstrated. An extended cutoff was achieved by increasing the lattice constant from 6.09 Å of the GaSb substrate to 6.13 Å using a 1.5 μm thick AlSb buffer layer. This enabled the growth of bulk absorber material with a higher antimony content, InAs0.81Sb0.19, and a greater than 5 μm cutoff. Transitioning the lattice to 6.13 Å also enabled the implementation of a simple binary AlSb layer as a unipolar barrier to block majority carrier electrons and reduce dark current noise. Individual test devices with 4 μm thick absorbers displayed 150 K dark current density, cutoff wavelength, quantum efficiency, and specific detectivity of 3 x 10-5 A/cm2, 5.31 μm, 44 % at 3.4 μm, and 4.3 x 1011 cmHz1/2/W at 5 μm, respectively. The instantaneous dark current activation energy at a given bias and temperature was determined via Arrhenius analysis from the dark current vs. temperature and bias data, and a discussion of valence band alignment between the InAsxSb1-x absorber and AlSb barrier layers is presented. The carrier concentration, mobility, and lifetime of the bulk absorber material and the device performance will be presented and a discussed.

  12. Development of TiBr semiconductor crystal for applications as radiation detector and photodetector; Desenvolvimento do cristal semicondutor de brometo de talio para aplicacoes como detector de radiacao e fotodetector

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de


    In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by {sup 241}Am (59 keV), {sup 133}Ba (80 e 355 keV), {sup 57}Co (122 keV), {sup 22}Na (511 keV) and {sup 137} Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

  13. Technology development of 3D detectors for high energy physics and medical imaging

    CERN Document Server

    Pellegrini, G


    This thesis is concerned with the fabrication, characterisation and simulation of 3D semiconductor detectors. Due to their geometry, these detectors have more efficient charge collection properties than current silicon and gallium arsenide planar detectors. The unit cell of these detectors is hexagonal with a central anode surrounded by six cathode contacts. This geometry gives a uniform electric field with the maximum drift and depletion distance set by electrode spacing, 85m in this project, rather than detector thickness, as in the case of planar detectors (typically 100-300m). This results in lower applied biases (35-40 V in the work of this project) compared to >200 V in typical planar detectors. The reduction in bias offers the possibility of improved detector operation in the presence of bulk radiation damage as lower voltage reduces leakage current which limits the signal to noise ratio and hence the overall detector efficiency. In this work, 3D detectors realised in Si, GaAs and SiC have ...

  14. Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures

    Directory of Open Access Journals (Sweden)

    Leontyev A.V.


    Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.

  15. Radiological and Nuclear Detection Material Science: Novel Rare-Earth Semiconductors for Solid-State Neutron Detectors and Thin High-k Dielectrics (United States)


    advanced materials, furthers our basic collective understanding in solid state neutron detector materials. The new materials directions have great promise...Lanthanum Amido Precursors”, Materials Chemistry and Physics 104 (2007) 220-224 10. Ihor Ketsman, Ya. B. Losovyj, A. Sokolov, Jinke Tang, Zhenjun Wang, M...and P.A. Dowben, “Surface charging of n-type Gd2O3 and HfO2 thin films”, Rare-Earth Doping of Advanced Materials for Photonic Applications, edited by

  16. Position-sensitive radiation detector..

    NARCIS (Netherlands)

    Van Eijk, C.W.E.; Schooneveld, E.


    Abstract of EP 0383389 (A1) Position-sensitive radiation detector provided with a semiconductor structure comprising a wafer of semiconductor material of a first conductivity type having two principal-surfaces situated at relatively short distances from each other, the dimensions of which are

  17. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai


    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  18. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao


    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  19. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll


    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  20. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT


    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  1. GaTe semiconductor for radiation detection (United States)

    Payne, Stephen A [Castro Valley, CA; Burger, Arnold [Nashville, TN; Mandal, Krishna C [Ashland, MA


    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  2. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C


    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  3. Photovoltaic radiation detector element (United States)

    Agouridis, D.C.


    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips.

  4. Radiation detectors laboratory; Laboratorio de detectores de radiacion

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)


    The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S


    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  6. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger


    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  7. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati


    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  8. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis


    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  9. Work on the ATLAS semiconductor tracker barrel

    CERN Multimedia

    Maximilien Brice


    Precision work is performed on the semiconductor tracker barrel of the ATLAS experiment. All work on these delicate components must be performed in a clean room so that impurities in the air, such as dust, do not contaminate the detector. The semiconductor tracker will be mounted in the barrel close to the heart of the ATLAS experiment to detect the path of particles produced in proton-proton collisions.

  10. Use of semiconductor detector c-Si microstrip type in obtaining the digital radiographic imaging of phantoms and biological samples of mammary glands; Empleo de detector semiconductor de c-Si del tipo microbandas en la obtencion de imagenes radiograficas digitales de maniquies y muestras biologicas de mamas

    Energy Technology Data Exchange (ETDEWEB)

    Leyva, A.; Cabal, A.; Pinera, I.; Abreu, Y.; Cruz, C. M. [Centro de Estudios Avanzados y Desarrollo Nuclear, C. Habana, Cuba (Cuba); Montano, L. M.; Diaz, C. C.; Fontaine, M. [IPN, Centro de Investigaciones y Estudios Avanzados, Mexico D. F. (Mexico); Ortiz, C. M. [ISSSTE, Hospital General Tacuba, Clinica de Mama y Gineco-oncologia, Mexico D. F. (Mexico); Padilla, F. [Instituto Superior de Tecnologias y Ciencias Aplicadas, C. Habana, Cuba (Cuba); De la Mora, R. [Centro de Control Estatal de Equipos Medicos, C. Habana, Cuba (Cuba)], e-mail:


    The present work synthesizes the experimental results obtained in the characterization of 64 micro strips crystalline silicon detector designed for experiments in high energies physics, with the objective of studying its possible application in advanced medical radiography, specifically in digital mammography and angiography. The research includes the acquisition of two-dimensional radiography of a mammography phantom using the scanning method, and its comparison with similar images simulated mathematically for different X rays sources. The paper also shows the experimental radiography of two biological samples taken from biopsies of mammas, where it is possible to identify the presence of possible pathological lesions. The results reached in this work point positively toward the effective possibility of satisfactorily introducing those advanced detectors in medical digital imaging applications. (Author)

  11. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures

    CERN Document Server

    Shah, Jagdeep


    Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Ultrafast spectroscopy of semiconductors is currently one of the most exciting areas of research in condensed-matter physics Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors This monograph presents some of the most striking recent advances in the field of ultrafast spectroscopy of semiconductors and their nanostructures After a brief overview of the basic concepts and of the recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy, it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses

  12. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Sfyrla, Anna [Univ. of Geneva (Switzerland)


    In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in p$\\bar{p}$ collisions with √s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb-1 of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is σWW/WZtheory x Br(W → ℓv; W/Z → jj) = 2.09 ± 0.14 pb. They measured NSignal = 410 ± 212(stat) ± 102(sys) signal events that correspond to a cross section σWW/WZ x Br(W → ℓv; W/Z → jj) = 1.47 ± 0.77(stat) ± 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be σ x Br(W → ℓv; W/Z → jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels

  13. Particlc detectors. Foundations and applications; Teilchendetektoren. Grundlagen und Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Kolanoski, Hermann; Wermes, Norbert


    The following topics are dealt with: Interaction of particles with matter, motion of charge carriers in electric and magnetic fields, signal generation by moving charges, non-electronic detectors, gas-filled detectors, semiconductor detectors, track reconstruction and momentum measurement, photodetectors, Cherenkov detectors, transition-radiation detectors, scintillation detectors, particle identification, calorimeters, detection of cosmic particles, signal processing and noise, trigger and data acquisition systems. (HSI)

  14. Characterisation of Silicon Timing Detectors for the RD50 Collaboration

    CERN Document Server

    Immig, David Maximilian


    Increasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche diode (LGAD). LGADs are studied by the RD50-Collaboration, which studies the characteristics of semiconductor devices to improve these for future requirements of high energy physics. This reports is engaged with the process to characterise semiconductor detectors, specially LGADs, with capacitance-voltage and current-voltage measurements as well as transient current techniques of un- and irradiated semiconductor devices.

  15. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph


    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  16. Power semiconductors

    CERN Document Server

    Kubát, M


    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  17. Z-contrast imaging and grain boundaries in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chisholm, M.F.; Pennycook, S.J.


    Interest in grain boundaries in semiconductors is linked to the application of polycrystalline semiconductors as photovoltaic and interconnect materials. In real devices such as solar cells and MOS structures as well as future devices such as flat-panel displays, the intergranular regions of the polycrystalline solid have a significant effect on the flow of electronic current. These grain boundary barriers exist because the chemical potential of the boundary atoms are shifted from the bulk value by the change in local symmetry. The chemical potential is also changed by impurities, other structural defects, and other phases in the boundary. The lack of knowledge on the atomic structure of grain boundaries is, at present, the greatest barrier to advancements in the understanding of the electrical properties of these defects. The advances of the last few years have provided the tools with which to probe these interfaces at the true atomic scale. One such tool is the high-resolution scanning transmission electron microscope installed at Oak Ridge National Laboratory (VG Microscopes HB603) that can form a 1.27 {Angstrom} electron probe. Images are formed by scanning the probe across a thin sample and using an annular detector to collect electrons scattered to high angles. Because the annular detector collects electrons scattered over a wide range of angles, phase correlation and dynamical diffraction effects are averaged by this annular integration. Thus, an image with incoherent characteristics is produced and retained to relatively large specimen thickness. The key advantage of incoherent imaging is that when the microscope is focused to produce maximum image contrast, the bright image features directly correspond to the positions of the atomic columns.

  18. Semiconductor Laser Measurements Laboratory (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  19. The Quantum Boltzmann Equation in Semiconductor Physics


    Snoke, D. W.


    The quantum Boltzmann equation, or Fokker-Planck equation, has been used to successfully explain a number of experiments in semiconductor optics in the past two decades. This paper reviews some of the developments of this work, including models of excitons in bulk materials, electron-hole plasmas, and polariton gases.

  20. The ATLAS semiconductor tracker

    CERN Document Server

    Mikuz, Marko


    The ATLAS Semiconductor Tracker (SCT) is presented. About 16000 silicon micro-strip sensors with a total active surface of over 60 m **2 and with 6.3 million read-out channels are built into 4088 modules arranged into four barrel layers and nine disks covering each of the forward regions up to an eta of 2.5. Challenges are imposed by the hostile radiation environment with particle fluences up to 2 multiplied by 10**1**4 cm**-**2 1 MeV neutron NIEL equivalent and 100 kGy TID, the 25 ns LHC bunch crossing time and the need for a hermetic, lightweight tracker. The solution adopted is carefully designed strip detectors operated at -7 degree C, biased up to 500 V and read out by binary radhard fast BiCMOS electronics. A zero-CTE carbon fibre structure provides mechanical support. 30 kW of power are supplied on aluminiutn/Kapton tapes and cooled by C//3F//8 evaporative cooling. Data and commands are transferred by optical links. Prototypes of detector modules have been built, irradiated to the maximum expected flue...

  1. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang


    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  2. Optical spectroscopy of carrier dynamics in semiconductor nanostructures

    NARCIS (Netherlands)

    de Jong, E.M.-L.D.


    Most commercial optoelectronic devices are currently made of bulk semiconductors, whose fundamental optical properties feature limitations. In solar panels, which are mostly made of bulk Si, the high-energy photons are inefficiently converted into electricity due to fast thermalisation, and the

  3. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport (United States)

    Su, Ching-Hua; Sha, Yi-Gao


    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  4. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan


    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  5. High throughput combinatorial screening of semiconductor materials (United States)

    Mao, Samuel S.


    This article provides an overview of an advanced combinatorial material discovery platform developed recently for screening semiconductor materials with properties that may have applications ranging from radiation detectors to solar cells. Semiconductor thin-film libraries, each consisting of 256 materials of different composition arranged into a 16×16 matrix, were fabricated using laser-assisted evaporation process along with a combinatorial mechanism to achieve variations. The composition and microstructure of individual materials on each thin-film library were characterized with an integrated scanning micro-beam x-ray fluorescence and diffraction system, while the band gaps were determined by scanning optical reflection and transmission of the libraries. An ultrafast ultraviolet photon-induced charge probe was devised to measure the mobility and lifetime of individual thin-film materials on semiconductor libraries. Selected results on the discovery of semiconductors with desired band gaps and transport properties are illustrated.

  6. The charge state of hydrogen ions in metals and semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bazhukov, S.I.; Kibardin, A.V.; Pyatkova, T.M.; Urmanov, A.R. (Urals Polytechnical Inst., Sverdlovsk (USSR))


    The charge state of hydrogen ions in metals and semiconductors has been studied based on a comparison of hydrogen ion stopping cross-sections in metal and semiconductor targets. It is shown that neutralization of the hydrogen ion in metals and semiconductors at ion speeds v{sub i} {proportional to} (1-2)v{sub 0}, where v{sub 0} = 2.2x10{sup 8} cm/s, is due to different mechanisms, i.e. to a bulk effect in metals and to a subsurface effect in semiconductors. (orig.).

  7. Combining two major ATLAS inner detector components

    CERN Multimedia

    Maximilien Brice


    The semiconductor tracker is inserted into the transition radiation tracker for the ATLAS experiment at the LHC. These make up two of the three major components of the inner detector. They will work together to measure the trajectories produced in the proton-proton collisions at the centre of the detector when the LHC is switched on in 2008.

  8. Materials technologies for IR detectors

    Energy Technology Data Exchange (ETDEWEB)

    Besson, J.


    This book presents the papers given at a conference which examined crystal growth methods for semiconductor materials used in infrared detectors. Topics considered at the conference included materials research, cadmium tellurides, electrochemistry, mercury tellurides, pressure effects, liquid phase epitaxy, annealing, germanium photoconductor materials, fundamental studies, materials characterization, magnetic fields, and basic properties of infrared materials.

  9. Canberra semiconductor, an industrial partner for physics research

    Energy Technology Data Exchange (ETDEWEB)

    Verplancke, J.; Burger, P.; Schoenmaekers, W. (Canberra Semiconductor NV, Olen (Belgium))


    Canberra semiconductor produces germanium and silicon solid state detectors for nuclear radiation. Its business domain covers the production of standard detectors on an industrial basis, for industrial and applied physics applications, as well as the development of special detectors and electronics, tailored to the needs of a particular application, in science and research. There exists an important and beneficial interaction between these two activities. (orig.).

  10. X-Ray and Gamma-Ray Radiation Detector

    DEFF Research Database (Denmark)


    Disclosed is a semiconductor radiation detector for detecting X-ray and / or gamma-ray radiation. The detector comprises a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs, at least one cathode, a plurality of detector electrodes arranged with a pitch...

  11. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J


    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  12. Electron-Beam Controlled Semiconductor Switches (United States)


    1987) 153-156. Mazzola , M.S., et al., "Investigation of a Photoconductive Closing and Opening Bulk U GaAs Semiconductor Switch," Proceedings of the...Un-doped GaAs or chromium doped GaAs has decay times of nanoseconds and less. Current scale is 40 mA div-1, time scale is 1000 ns divŕ. (M. Mazzola ...Semiconductor Switch," J. Appl. Phys. 63 (1988) 2460-2463. [5] Mazzola , M., Schoenbach, K., Lakdawala, V., Germer, R., Loubriel, M., and Zutavern, F

  13. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph


    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  14. 19 CFR 149.4 - Bulk and break bulk cargo. (United States)


    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Bulk and break bulk cargo. 149.4 Section 149.4... TREASURY (CONTINUED) IMPORTER SECURITY FILING § 149.4 Bulk and break bulk cargo. (a) Bulk cargo exempted.... (b) Break bulk cargo exempted from time requirement. For break bulk cargo that is exempt from the...

  15. Reserve current analysis in semiconductor insulator semiconductor ...

    African Journals Online (AJOL)

    Reserve current analysis in semiconductor insulator semiconductor (SIS) solar cells. H Yakubu, PK Mensah. Abstract. No Abstract. Journal of the Ghana Association Vol. 2 (3) 1999: pp. 1-4. Full Text: EMAIL FULL TEXT EMAIL FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT.

  16. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin


    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  17. Printable semiconductor structures and related methods of making and assembling (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn


    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  18. Broad-band semiconductor optical amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ding Ying [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)]. E-mail:; Kan Qiang [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang Junling [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Pan Jiaoqing [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhou Fan [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Chen Weixi [School of Physics, Peking University, Beijing 100871 (China); Wang Wei [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)


    Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared.

  19. Department of Radiation Detectors - Overview

    Energy Technology Data Exchange (ETDEWEB)

    Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)


    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

  20. Semiconductor Sensors for a Wide Temperature Range


    Nikolay GORBACHUK; Mikhail LARIONOV; Aleksey FIRSOV; Nikolay SHATIL


    Prototype sensors are described that are applicable for pressure, position, temperature, and field measurements in the temperature range of 4.2 to 300 K. The strain gauges utilize the silicon substrate and thin film technology. The tensosensitivity of strain sensors is 40 µV/mln-1 or better depending on metrological characteristics of semiconductor films, orientation, and current. The temperature sensors (thermistors) make use of the germanium powder bulk. The temperature coefficient of resis...

  1. The quantum Boltzmann equation in semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Snoke, D.W. [Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260 (United States)


    The quantum Boltzmann equation, or Fokker-Planck equation, has been used to successfully explain a number of experiments in semiconductor optics in the past two decades. This paper reviews some of the developments of this work, including models of excitons in bulk materials, electron-hole plasmas, and polariton gases. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. AlN Based Extreme Ultraviolet (EUV) Detectors Project (United States)

    National Aeronautics and Space Administration — This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We...

  3. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang


    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  4. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices (United States)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong


    -based devices, plasmonic and photonic crystal resonators, infrared detectors and focal plane arrays, and photovoltaic devices and solar cells. This cluster presents a subset of the symposium topics, namely semiconductor emitters, semiconductor detectors, and semiconductor-based flexible devices.

  5. A simulation study on the focal plane detector of the LAUE project

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M., E-mail: [APC Laboratory, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44100 Ferrara (Italy); Frontera, F. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44100 Ferrara (Italy); INAF/IASF-Bologna, Via P. Gobetti 101, Bologna (Italy); Caroli, E. [INAF/IASF-Bologna, Via P. Gobetti 101, Bologna (Italy); Virgilli, E.; Valsan, V. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44100 Ferrara (Italy)


    The LAUE project, supported by the Italian Space Agency (ASI), is devoted to the development of a long focal length (even 20 m or longer) Laue lens for gamma ray astronomy between 80 and 600 keV. These lenses take advantage of Bragg diffraction to focus radiation onto a small spot drastically improving the signal to noise ratio as well as reducing the required size of the detector significantly. In this paper we present a Monte-Carlo simulation study with MEGALIB to optimize, for space applications, the detector size to achieve high detection efficiency, and to optimize the position resolution of the detector to reconstruct the Point Spread Function of the lens considered for the LAUE project. Then we will show simulations, using the SILVACO semiconductor simulation toolkit, on the optimized detector to estimate its capacitance per channel and depletion voltage. In all of the simulations, two materials were compared; a low density material (Silicon) and a high density material (Germanium). - Highlights: • The quantized Hall plateaus and Shubnikov de Haas oscillations in transition metal doped topological insulators are observed. • The evidence of a two-dimensional/layered transport of the bulk electrons is reported. • An obvious ferromagnetism in doped topological insulators is observed. • Care should be taken to pindown the transport of the topological SS in topological insulators.

  6. Bulk Nanostructured Materials (United States)

    Koch, C. C.; Langdon, T. G.; Lavernia, E. J.


    This paper will address three topics of importance to bulk nanostructured materials. Bulk nanostructured materials are defined as bulk solids with nanoscale or partly nanoscale microstructures. This category of nanostructured materials has historical roots going back many decades but has relatively recent focus due to new discoveries of unique properties of some nanoscale materials. Bulk nanostructured materials are prepared by a variety of severe plastic deformation methods, and these will be reviewed. Powder processing to prepare bulk nanostructured materials requires that the powders be consolidated by typical combinations of pressure and temperature, the latter leading to coarsening of the microstructure. The thermal stability of nanostructured materials will also be discussed. An example of bringing nanostructured materials to applications as structural materials will be described in terms of the cryomilling of powders and their consolidation.

  7. Advanced processing of CdTe pixel radiation detectors (United States)

    Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.


    We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

  8. Particle detectors

    CERN Multimedia

    CERN. Geneva


    Introduction, interaction of radiation with matter measurement of momentum of charged particles, of energy of e/gamma, hadrons, identification of particles. Design of HEP detectors. Principle of operation and performance of tracking sub-detectors, calorimeters and muon system.

  9. Detector Unit

    CERN Multimedia


    Original detector unit of the Instituut voor Kernfysisch Onderzoek (IKO) BOL project. This detector unit shows that silicon detectors for nuclear physics particle detection were already developed and in use in the 1960's in Amsterdam. Also the idea of putting 'strips' onto the silicon for high spatial resolution of a particle's impact on the detector were implemented in the BOL project which used 64 of these detector units. The IKO BOL project with its silicon particle detectors was designed, built and operated from 1965 to roughly 1977. Detector Unit of the BOL project: These detectors, notably the ‘checkerboard detector’, were developed during the years 1964-1968 in Amsterdam, The Netherlands, by the Natuurkundig Laboratorium of the N.V. Philips Gloeilampen Fabrieken. This was done in close collaboration with the Instituut voor Kernfysisch Onderzoek (IKO) where the read-out electronics for their use in the BOL Project was developed and produced.

  10. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng


    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  11. Enhancement of superconducting critical current by injection of quasiparticles in superconductor semiconductor devices

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Sørensen, C. B.


    We report new measurements on 3-terminal superconductor semiconductor injection devices, demonstrating enhancement of the supercurrent by injection from a superconducting injector electrode. Two other electrodes were used as detectors. Applying a small voltage to the injector, reduced the maximum...

  12. Semiconductor devices physics and technology

    CERN Document Server

    Sze, Simon


    Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

  13. Operation and performance of the ATLAS semiconductor tracker

    CERN Document Server

    Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmad, Ashfaq; Ahmadov, Faig; Aielli, Giulio; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernabéu, José; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin; Blackburn, Daniel; Blair, Robert; Blanchard, Jean-Baptiste; Blazek, Tomas; Bloch, Ingo; Blocker, Craig; Blum, Walter; Blumenschein, Ulrike; Bobbink, Gerjan; Bobrovnikov, Victor; Bocchetta, Simona Serena; Bocci, Andrea; Boddy, Christopher Richard; Boehler, Michael; Boek, Jennifer; Boek, Thorsten Tobias; Bogaerts, Joannes Andreas; Bogdanchikov, Alexander; Bogouch, Andrei; Bohm, Christian; Bohm, Jan; Boisvert, Veronique; Bold, Tomasz; Boldea, Venera; Boldyrev, Alexey; Bomben, Marco; Bona, Marcella; Boonekamp, Maarten; Borisov, Anatoly; Borissov, Guennadi; Borri, Marcello; Borroni, Sara; Bortfeldt, Jonathan; Bortolotto, Valerio; Bos, Kors; Boscherini, Davide; Bosman, Martine; Boterenbrood, Hendrik; Boudreau, Joseph; Bouffard, Julian; Bouhova-Thacker, Evelina Vassileva; Boumediene, Djamel Eddine; Bourdarios, Claire; Bousson, Nicolas; Boutouil, Sara; Boveia, Antonio; Boyd, James; Boyko, Igor; Bozovic-Jelisavcic, Ivanka; Bracinik, Juraj; Branchini, Paolo; Brandt, Andrew; Brandt, Gerhard; Brandt, Oleg; Bratzler, Uwe; Brau, Benjamin; Brau, James; Braun, Helmut; Brazzale, Simone Federico; Brelier, Bertrand; Brendlinger, Kurt; Brennan, Amelia Jean; Brenner, Richard; Bressler, Shikma; Bristow, Kieran; Bristow, Timothy Michael; Britton, Dave; Brochu, Frederic; Brock, Ian; Brock, Raymond; Bromberg, Carl; Bronner, Johanna; Brooijmans, Gustaaf; Brooks, Timothy; Brooks, William; Brosamer, Jacquelyn; Brost, Elizabeth; Brown, Gareth; Brown, Jonathan; Bruckman de Renstrom, Pawel; Bruncko, Dusan; Bruneliere, Renaud; Brunet, Sylvie; Bruni, Alessia; Bruni, Graziano; Bruschi, Marco; Bryngemark, Lene; Buanes, Trygve; Buat, Quentin; Bucci, Francesca; Buchholz, Peter; Buckingham, Ryan; Buckley, Andrew; Buda, Stelian Ioan; Budagov, Ioulian; Buehrer, Felix; Bugge, Lars; Bugge, Magnar Kopangen; Bulekov, Oleg; Bundock, Aaron Colin; Burckhart, Helfried; Burdin, Sergey; Burghgrave, Blake; Burke, Stephen; Burmeister, Ingo; Busato, Emmanuel; Büscher, Daniel; Büscher, Volker; Bussey, Peter; Buszello, Claus-Peter; Butler, Bart; Butler, John; Butt, Aatif Imtiaz; Buttar, Craig; Butterworth, Jonathan; Butti, Pierfrancesco; Buttinger, William; Buzatu, Adrian; Byszewski, Marcin; Cabrera Urbán, Susana; Caforio, Davide; Cakir, Orhan; Calafiura, Paolo; Calandri, Alessandro; Calderini, Giovanni; Calfayan, Philippe; Calkins, Robert; Caloba, Luiz; Calvet, David; Calvet, Samuel; Camacho Toro, Reina; Camarda, Stefano; Cameron, David; Caminada, Lea Michaela; Caminal Armadans, Roger; Campana, Simone; Campanelli, Mario; Campoverde, Angel; Canale, Vincenzo; Canepa, Anadi; Cantero, Josu; Cantrill, Robert; Cao, Tingting; Capeans Garrido, Maria Del Mar; Caprini, Irinel; Caprini, Mihai; Capua, Marcella; Caputo, Regina; Cardarelli, Roberto; Carli, Tancredi; Carlino, Gianpaolo; Carminati, Leonardo; Caron, Sascha; Carquin, Edson; Carrillo-Montoya, German D; Carter, Antony; Carter, Janet; Carvalho, João; Casadei, Diego; Casado, Maria Pilar; Castaneda-Miranda, Elizabeth; Castelli, Angelantonio; Castillo Gimenez, Victoria; Castro, Nuno Filipe; Catastini, Pierluigi; Catinaccio, Andrea; Catmore, James; Cattai, Ariella; Cattani, Giordano; Caughron, Seth; Cavaliere, Viviana; Cavalli, Donatella; Cavalli-Sforza, Matteo; Cavasinni, Vincenzo; Ceradini, Filippo; Cerio, Benjamin; Cerny, Karel; Santiago Cerqueira, Augusto; Cerri, Alessandro; Cerrito, Lucio; Cerutti, Fabio; Cerv, Matevz; Cervelli, Alberto; Cetin, Serkant Ali; Chafaq, Aziz; Chakraborty, Dhiman; Chalupkova, Ina; Chan, Kevin; Chang, Philip; Chapleau, Bertrand; Chapman, John Derek; Charfeddine, Driss; Charlton, Dave; Chau, Chav Chhiv; Chavez Barajas, Carlos Alberto; Cheatham, Susan; Chegwidden, Andrew; Chekanov, Sergei; Chekulaev, Sergey; Chelkov, Gueorgui; Chelstowska, Magda Anna; Chen, Chunhui; Chen, Hucheng; Chen, Karen; Chen, Liming; Chen, Shenjian; Chen, Xin; Chen, Yujiao; Cheng, Hok Chuen; Cheng, Yangyang; Cheplakov, Alexander; Cherkaoui El Moursli, Rajaa; Chernyatin, Valeriy; Cheu, Elliott; Chevalier, Laurent; Chiarella, Vitaliano; Chiefari, Giovanni; Childers, John Taylor; Chilingarov, Alexandre; Chiodini, Gabriele; Chisholm, Andrew; Chislett, Rebecca Thalatta; Chitan, Adrian; Chizhov, Mihail; Chouridou, Sofia; Chow, Bonnie Kar Bo; Christidi, Ilektra-Athanasia; Chromek-Burckhart, Doris; Chu, Ming-Lee; Chudoba, Jiri; Chwastowski, Janusz; Chytka, Ladislav; Ciapetti, Guido; Ciftci, Abbas Kenan; Ciftci, Rena; Cinca, Diane; Cindro, Vladimir; Ciocio, Alessandra; Cirkovic, Predrag; Citron, Zvi Hirsh; Citterio, Mauro; Ciubancan, Mihai; Clark, Allan G; Clark, Philip James; Clarke, Robert; Cleland, Bill; Clemens, Jean-Claude; Clement, Christophe; Coadou, Yann; Cobal, Marina; Coccaro, Andrea; Cochran, James H; Coffey, Laurel; Cogan, Joshua Godfrey; Coggeshall, James; Cole, Brian; Cole, Stephen; Colijn, Auke-Pieter; Collins-Tooth, Christopher; Collot, Johann; Colombo, Tommaso; Colon, German; Compostella, Gabriele; Conde Muiño, Patricia; Coniavitis, Elias; Conidi, Maria Chiara; Connell, Simon Henry; Connelly, Ian; Consonni, Sofia Maria; Consorti, Valerio; Constantinescu, Serban; Conta, Claudio; Conti, Geraldine; Conventi, Francesco; Cooke, Mark; Cooper, Ben; Cooper-Sarkar, Amanda; Cooper-Smith, Neil; Copic, Katherine; Cornelissen, Thijs; Corradi, Massimo; Corriveau, Francois; Corso-Radu, Alina; Cortes-Gonzalez, Arely; Cortiana, Giorgio; Costa, Giuseppe; Costa, María José; Costanzo, Davide; Côté, David; Cottin, Giovanna; Cowan, Glen; Cox, Brian; Cranmer, Kyle; Cree, Graham; Crépé-Renaudin, Sabine; Crescioli, Francesco; Crispin Ortuzar, Mireia; Cristinziani, Markus; Croft, Vince; Crosetti, Giovanni; Cuciuc, Constantin-Mihai; Cuenca Almenar, Cristóbal; Cuhadar Donszelmann, Tulay; Cummings, Jane; Curatolo, Maria; Cuthbert, Cameron; Czirr, Hendrik; Czodrowski, Patrick; Czyczula, Zofia; D'Auria, Saverio; D'Onofrio, Monica; Da Cunha Sargedas De Sousa, Mario Jose; Da Via, Cinzia; Dabrowski, Wladyslaw; Dafinca, Alexandru; Dai, Tiesheng; Dale, Orjan; Dallaire, Frederick; Dallapiccola, Carlo; Dam, Mogens; Daniells, Andrew Christopher; Dano Hoffmann, Maria; Dao, Valerio; Darbo, Giovanni; Darlea, Georgiana Lavinia; Darmora, Smita; Dassoulas, James; Dattagupta, Aparajita; Davey, Will; David, Claire; Davidek, Tomas; Davies, Eleanor; Davies, Merlin; Davignon, Olivier; Davison, Adam; Davison, Peter; Davygora, Yuriy; Dawe, Edmund; Dawson, Ian; Daya-Ishmukhametova, Rozmin; De, Kaushik; de Asmundis, Riccardo; De Castro, Stefano; De Cecco, Sandro; de Graat, Julien; De Groot, Nicolo; de Jong, Paul; De la Torre, Hector; De Lorenzi, Francesco; De Nooij, Lucie; De Pedis, Daniele; De Salvo, Alessandro; De Sanctis, Umberto; De Santo, Antonella; De Vivie De Regie, Jean-Baptiste; De Zorzi, Guido; Dearnaley, William James; Debbe, Ramiro; Debenedetti, Chiara; Dechenaux, Benjamin; Dedovich, Dmitri; Degenhardt, James; Deigaard, Ingrid; Del Peso, Jose; Del Prete, Tarcisio; Deliot, Frederic; Delitzsch, Chris Malena; Deliyergiyev, Maksym; Dell'Acqua, Andrea; Dell'Asta, Lidia; Dell'Orso, Mauro; Della Pietra, Massimo; della Volpe, Domenico; Delmastro, Marco; Delsart, Pierre-Antoine; Deluca, Carolina; Demers, Sarah; Demichev, Mikhail; Demilly, Aurelien; Denisov, Sergey; Derendarz, Dominik; Derkaoui, Jamal Eddine; Derue, Frederic; Dervan, Paul; Desch, Klaus Kurt; Deterre, Cecile; Deviveiros, Pier-Olivier; Dewhurst, Alastair; Dhaliwal, Saminder; Di Ciaccio, Anna; Di Ciaccio, Lucia; Di Domenico, Antonio; Di Donato, Camilla; Di Girolamo, Alessandro; Di Girolamo, Beniamino; Di Mattia, Alessandro; Di Micco, Biagio; Di Nardo, Roberto; Di Simone, Andrea; Di Sipio, Riccardo; Di Valentino, David; Diaz, Marco Aurelio; Diehl, Edward; Dietrich, Janet; Dietzsch, Thorsten; Diglio, Sara; Dimitrievska, Aleksandra; Dingfelder, Jochen; Dionisi, Carlo; Dita, Petre; Dita, Sanda; Dittus, Fridolin; Djama, Fares; Djobava, Tamar; Barros do Vale, Maria Aline; Do Valle Wemans, André; Doan, Thi Kieu Oanh; Dobos, Daniel; Dobson, Ellie; Doglioni, Caterina; Doherty, Tom; Dohmae, Takeshi; Dolejsi, Jiri; Dolezal, Zdenek; Dolgoshein, Boris; Donadelli, Marisilvia; Donati, Simone; Dondero, Paolo; Donini, Julien; Dopke, Jens; Doria, Alessandra; Dos Anjos, Andre; Dova, Maria-Teresa; Doyle, Tony; Dris, Manolis; Dubbert, Jörg; Dube, Sourabh; Dubreuil, Emmanuelle; Duchovni, Ehud; Duckeck, Guenter; Ducu, Otilia Anamaria; Duda, Dominik; Dudarev, Alexey; Dudziak, Fanny; Duflot, Laurent; Duguid, Liam; Dührssen, Michael; Dunford, Monica; Duran Yildiz, Hatice; Düren, Michael; Durglishvili, Archil; Dwuznik, Michal; Dyndal, Mateusz; Ebke, Johannes; Edson, William; Edwards, Nicholas Charles; Ehrenfeld, Wolfgang; Eifert, Till; Eigen, Gerald; Einsweiler, Kevin; Ekelof, Tord; El Kacimi, Mohamed; Ellert, Mattias; Elles, Sabine; Ellinghaus, Frank; Ellis, Nicolas; Elmsheuser, Johannes; Elsing, Markus; Emeliyanov, Dmitry; Enari, Yuji; Endner, Oliver Chris; Endo, Masaki; Engelmann, Roderich; Erdmann, Johannes; Ereditato, Antonio; Eriksson, Daniel; Ernis, Gunar; Ernst, Jesse; Ernst, Michael; Ernwein, Jean; Errede, Deborah; Errede, Steven; Ertel, Eugen; Escalier, Marc; Esch, Hendrik; Escobar, Carlos; Esposito, Bellisario; Etienvre, Anne-Isabelle; Etzion, Erez; Evans, Hal; Fabbri, Laura; Facini, Gabriel; Fakhrutdinov, Rinat; Falciano, Speranza; Faltova, Jana; Fang, Yaquan; Fanti, Marcello; Farbin, Amir; Farilla, Addolorata; Farooque, Trisha; Farrell, Steven; Farrington, Sinead; Farthouat, Philippe; Fassi, Farida; Fassnacht, Patrick; Fassouliotis, Dimitrios; Favareto, Andrea; Fayard, Louis; Federic, Pavol; Fedin, Oleg; Fedorko, Wojciech; Fehling-Kaschek, Mirjam; Feigl, Simon; Feligioni, Lorenzo; Feng, Cunfeng; Feng, Eric; Feng, Haolu; Fenyuk, Alexander; Fernandez Perez, Sonia; Ferrag, Samir; Ferrando, James; Ferrari, Arnaud; Ferrari, Pamela; Ferrari, Roberto; Ferreira de Lima, Danilo Enoque; Ferrer, Antonio; Ferrere, Didier; Ferretti, Claudio; Ferretto Parodi, Andrea; Fiascaris, Maria; Fiedler, Frank; Filipčič, Andrej; Filipuzzi, Marco; Filthaut, Frank; Fincke-Keeler, Margret; Finelli, Kevin Daniel; Fiolhais, Miguel; Fiorini, Luca; Firan, Ana; Fischer, Julia; Fisher, Wade Cameron; Fitzgerald, Eric Andrew; Flechl, Martin; Fleck, Ivor; Fleischmann, Philipp; Fleischmann, Sebastian; Fletcher, Gareth Thomas; Fletcher, Gregory; Flick, Tobias; Floderus, Anders; Flores Castillo, Luis; Florez Bustos, Andres Carlos; Flowerdew, Michael; Formica, Andrea; Forti, Alessandra; Fortin, Dominique; Fournier, Daniel; Fox, Harald; Fracchia, Silvia; Francavilla, Paolo; Franchini, Matteo; Franchino, Silvia; Francis, David; Franklin, Melissa; Franz, Sebastien; Fraternali, Marco; French, Sky; Friedrich, Conrad; Friedrich, Felix; Froidevaux, Daniel; Frost, James; Fukunaga, Chikara; Fullana Torregrosa, Esteban; Fulsom, Bryan Gregory; Fuster, Juan; Gabaldon, Carolina; Gabizon, Ofir; Gabrielli, Alessandro; Gabrielli, Andrea; Gadatsch, Stefan; Gadomski, Szymon; Gagliardi, Guido; Gagnon, Pauline; Galea, Cristina; Galhardo, Bruno; Gallas, Elizabeth; Gallo, Valentina Santina; Gallop, Bruce; Gallus, Petr; Galster, Gorm Aske Gram Krohn; Gan, KK; Gandrajula, Reddy Pratap; Gao, Jun; Gao, Yongsheng; Garay Walls, Francisca; Garberson, Ford; García, Carmen; Garcia Argos, Carlos; García Navarro, José Enrique; Garcia-Sciveres, Maurice; Gardner, Robert; Garelli, Nicoletta; Garonne, Vincent; Gatti, Claudio; Gaudio, Gabriella; Gaur, Bakul; Gauthier, Lea; Gauzzi, Paolo; Gavrilenko, Igor; Gay, Colin; Gaycken, Goetz; Gazis, Evangelos; Ge, Peng; Gecse, Zoltan; Gee, Norman; Geerts, Daniël Alphonsus Adrianus; Geich-Gimbel, Christoph; Gellerstedt, Karl; Gemme, Claudia; Gemmell, Alistair; Genest, Marie-Hélène; Gentile, Simonetta; George, Matthias; George, Simon; Gerbaudo, Davide; Gershon, Avi; Ghazlane, Hamid; Ghodbane, Nabil; Giacobbe, Benedetto; Giagu, Stefano; Giangiobbe, Vincent; Giannetti, Paola; Gianotti, Fabiola; Gibbard, Bruce; Gibson, Stephen; Gilchriese, Murdock; Gillam, Thomas; Gillberg, Dag; Gilles, Geoffrey; Gingrich, Douglas; Giokaris, Nikos; Giordani, MarioPaolo; Giordano, Raffaele; Giorgi, Francesco Michelangelo; Giraud, Pierre-Francois; Giugni, Danilo; Giuliani, Claudia; Giulini, Maddalena; Gjelsten, Børge Kile; Gkialas, Ioannis; Gladilin, Leonid; Glasman, Claudia; Glatzer, Julian; Glaysher, Paul; Glazov, Alexandre; Glonti, George; Goblirsch-Kolb, Maximilian; Goddard, Jack Robert; Godfrey, Jennifer; Godlewski, Jan; Goeringer, Christian; Goldfarb, Steven; Golling, Tobias; Golubkov, Dmitry; Gomes, Agostinho; Gomez Fajardo, Luz Stella; Gonçalo, Ricardo; Goncalves Pinto Firmino Da Costa, Joao; Gonella, Laura; González de la Hoz, Santiago; Gonzalez Parra, Garoe; Gonzalez Silva, Laura; Gonzalez-Sevilla, Sergio; Goodrick, Maurice; Goossens, Luc; Gorbounov, Petr Andreevich; Gordon, Howard; Gorelov, Igor; Gorfine, Grant; Gorini, Benedetto; Gorini, Edoardo; Gorišek, Andrej; Gornicki, Edward; Goshaw, Alfred; Gössling, Claus; Gostkin, Mikhail Ivanovitch; Gouighri, Mohamed; Goujdami, Driss; Goulette, Marc Phillippe; Goussiou, Anna; Goy, Corinne; Gozpinar, Serdar; Grabas, Herve Marie Xavier; Graber, Lars; Grabowska-Bold, Iwona; Grafström, Per; Grahn, Karl-Johan; Gramling, Johanna; Gramstad, Eirik; Grancagnolo, Sergio; Grassi, Valerio; Gratchev, Vadim; Gray, Heather; Graziani, Enrico; Grebenyuk, Oleg; Greenwood, Zeno Dixon; Gregersen, Kristian; Gregor, Ingrid-Maria; Grenier, Philippe; Griffiths, Justin; Grigalashvili, Nugzar; Grillo, Alexander; Grimm, Kathryn; Grinstein, Sebastian; Gris, Philippe Luc Yves; Grishkevich, Yaroslav; Grivaz, Jean-Francois; Grohs, Johannes Philipp; Grohsjean, Alexander; Gross, Eilam; Grosse-Knetter, Joern; Grossi, Giulio Cornelio; Groth-Jensen, Jacob; Grout, Zara Jane; Grybel, Kai; Guan, Liang; Guescini, Francesco; Guest, Daniel; Gueta, Orel; Guicheney, Christophe; Guido, Elisa; Guillemin, Thibault; Guindon, Stefan; Gul, Umar; Gumpert, Christian; Gunther, Jaroslav; Guo, Jun; Gupta, Shaun; Gutierrez, Phillip; Gutierrez Ortiz, Nicolas Gilberto; Gutschow, Christian; Guttman, Nir; Guyot, Claude; Gwenlan, Claire; Gwilliam, Carl; Haas, Andy; Haber, Carl; Hadavand, Haleh Khani; Haddad, Nacim; Haefner, Petra; Hageboeck, Stephan; Hajduk, Zbigniew; Hakobyan, Hrachya; Haleem, Mahsana; Hall, David; Halladjian, Garabed; Hamacher, Klaus; Hamal, Petr; Hamano, Kenji; Hamer, Matthias; Hamilton, Andrew; Hamilton, Samuel; Hamnett, Phillip George; Han, Liang; Hanagaki, Kazunori; Hanawa, Keita; Hance, Michael; Hanke, Paul; Hansen, Jørgen Beck; Hansen, Jorn Dines; Hansen, Peter Henrik; Hara, Kazuhiko; Hard, Andrew; Harenberg, Torsten; Harkusha, Siarhei; Harper, Devin; Harrington, Robert; Harris, Orin; Harrison, Paul Fraser; Hartjes, Fred; Hasegawa, Satoshi; Hasegawa, Yoji; Hasib, A; Hassani, Samira; Haug, Sigve; Hauschild, Michael; Hauser, Reiner; Havranek, Miroslav; Hawkes, Christopher; Hawkings, Richard John; Hawkins, Anthony David; Hayashi, Takayasu; Hayden, Daniel; Hays, Chris; Hayward, Helen; Haywood, Stephen; Head, Simon; Heck, Tobias; Hedberg, Vincent; Heelan, Louise; Heim, Sarah; Heim, Timon; Heinemann, Beate; Heinrich, Lukas; Heisterkamp, Simon; Hejbal, Jiri; Helary, Louis; Heller, Claudio; Heller, Matthieu; Hellman, Sten; Hellmich, Dennis; Helsens, Clement; Henderson, James; Henderson, Robert; Hengler, Christopher; Henrichs, Anna; Henriques Correia, Ana Maria; Henrot-Versille, Sophie; Hensel, Carsten; Herbert, Geoffrey Henry; Hernández Jiménez, Yesenia; Herrberg-Schubert, Ruth; Herten, Gregor; Hertenberger, Ralf; Hervas, Luis; Hesketh, Gavin Grant; Hessey, Nigel; Hickling, Robert; Higón-Rodriguez, Emilio; Hill, Ewan; Hill, John; Hiller, Karl Heinz; Hillert, Sonja; Hillier, Stephen; Hinchliffe, Ian; Hines, Elizabeth; Hirose, Minoru; Hirschbuehl, Dominic; Hobbs, John; Hod, Noam; Hodgkinson, Mark; Hodgson, Paul; Hoecker, Andreas; Hoeferkamp, Martin; Hoffman, Julia; Hoffmann, Dirk; Hofmann, Julia Isabell; Hohlfeld, Marc; Holmes, Tova Ray; Hong, Tae Min; Hooft van Huysduynen, Loek; Hostachy, Jean-Yves; Hou, Suen; Hoummada, Abdeslam; Howard, Jacob; Howarth, James; Hrabovsky, Miroslav; Hristova, Ivana; Hrivnac, Julius; Hryn'ova, Tetiana; Hsu, Pai-hsien Jennifer; Hsu, Shih-Chieh; Hu, Diedi; Hu, Xueye; Huang, Yanping; Hubacek, Zdenek; Hubaut, Fabrice; Huegging, Fabian; Huffman, Todd Brian; Hughes, Emlyn; Hughes, Gareth; Huhtinen, Mika; Hülsing, Tobias Alexander; Hurwitz, Martina; Huseynov, Nazim; Huston, Joey; Huth, John; Iacobucci, Giuseppe; Iakovidis, Georgios; Ibragimov, Iskander; Iconomidou-Fayard, Lydia; Idarraga, John; Ideal, Emma; Iengo, Paolo; Igonkina, Olga; Iizawa, Tomoya; Ikegami, Yoichi; Ikematsu, Katsumasa; Ikeno, Masahiro; Iliadis, Dimitrios; Ilic, Nikolina; Inamaru, Yuki; Ince, Tayfun; Ioannou, Pavlos; Iodice, Mauro; Iordanidou, Kalliopi; Ippolito, Valerio; Irles Quiles, Adrian; Isaksson, Charlie; Ishino, Masaya; Ishitsuka, Masaki; Ishmukhametov, Renat; Issever, Cigdem; Istin, Serhat; Iturbe Ponce, Julia Mariana; Ivarsson, Jenny; Ivashin, Anton; Iwanski, Wieslaw; Iwasaki, Hiroyuki; Izen, Joseph; Izzo, Vincenzo; Jackson, Brett; Jackson, John; Jackson, Matthew; Jackson, Paul; Jaekel, Martin; Jain, Vivek; Jakobs, Karl; Jakobsen, Sune; Jakoubek, Tomas; Jakubek, Jan; Jamin, David Olivier; Jana, Dilip; Jansen, Eric; Jansen, Hendrik; Janssen, Jens; Janus, Michel; Jarlskog, Göran; Javadov, Namig; Javůrek, Tomáš; Jeanty, Laura; Jeng, Geng-yuan; Jennens, David; Jenni, Peter; Jentzsch, Jennifer; Jeske, Carl; Jézéquel, Stéphane; Ji, Haoshuang; Ji, Weina; Jia, Jiangyong; Jiang, Yi; Jimenez Belenguer, Marcos; Jin, Shan; Jinaru, Adam; Jinnouchi, Osamu; Joergensen, Morten Dam; Johansson, Erik; Johansson, Per; Johns, Kenneth; Jon-And, Kerstin; Jones, Graham; Jones, Roger; Jones, Tim; Jongmanns, Jan; Jorge, Pedro; Joseph, John; Joshi, Kiran Daniel; Jovicevic, Jelena; Ju, Xiangyang; Jung, Christian; Jungst, Ralph Markus; Jussel, Patrick; Juste Rozas, Aurelio; Kaci, Mohammed; Kaczmarska, Anna; Kado, Marumi; Kagan, Harris; Kagan, Michael; Kajomovitz, Enrique; Kama, Sami; Kanaya, Naoko; Kaneda, Michiru; Kaneti, Steven; Kanno, Takayuki; Kantserov, Vadim; Kanzaki, Junichi; Kaplan, Benjamin; Kapliy, Anton; Kar, Deepak; Karakostas, Konstantinos; Karastathis, Nikolaos; Karnevskiy, Mikhail; Karpov, Sergey; Karthik, Krishnaiyengar; Kartvelishvili, Vakhtang; Karyukhin, Andrey; Kashif, Lashkar; Kasieczka, Gregor; Kass, Richard; Kastanas, Alex; Kataoka, Yousuke; Katre, Akshay; Katzy, Judith; Kaushik, Venkatesh; Kawagoe, Kiyotomo; Kawamoto, Tatsuo; Kawamura, Gen; Kazama, Shingo; Kazanin, Vassili; Kazarinov, Makhail; Keeler, Richard; Keener, Paul; Kehoe, Robert; Keil, Markus; Keller, John; Keoshkerian, Houry; Kepka, Oldrich; Kerševan, Borut Paul; Kersten, Susanne; Kessoku, Kohei; Keung, Justin; Khalil-zada, Farkhad; Khandanyan, Hovhannes; Khanov, Alexander; Khodinov, Alexander; Khomich, Andrei; Khoo, Teng Jian; Khoriauli, Gia; Khoroshilov, Andrey; Khovanskiy, Valery; Khramov, Evgeniy; Khubua, Jemal; Kim, Hee Yeun; Kim, Hyeon Jin; Kim, Shinhong; Kimura, Naoki; Kind, Oliver; King, Barry; King, Matthew; King, Robert Steven Beaufoy; King, Samuel Burton; Kirk, Julie; Kiryunin, Andrey; Kishimoto, Tomoe; Kisielewska, Danuta; Kiss, Florian; Kitamura, Takumi; Kittelmann, Thomas; Kiuchi, Kenji; Kladiva, Eduard; Klein, Max; Klein, Uta; Kleinknecht, Konrad; Klimek, Pawel; Klimentov, Alexei; Klingenberg, Reiner; Klinger, Joel Alexander; Klioutchnikova, Tatiana; Klok, Peter; Kluge, Eike-Erik; Kluit, Peter; Kluth, Stefan; Kneringer, Emmerich; Knoops, Edith; Knue, Andrea; Kobayashi, Tomio; Kobel, Michael; Kocian, Martin; Kodys, Peter; Koevesarki, Peter; Koffas, Thomas; Koffeman, Els; Kogan, Lucy Anne; Kohlmann, Simon; Kohout, Zdenek; Kohriki, Takashi; Koi, Tatsumi; Kolanoski, Hermann; Koletsou, Iro; Koll, James; Komar, Aston; Komori, Yuto; Kondo, Takahiko; Kondrashova, Nataliia; Köneke, Karsten; König, Adriaan; König, Sebastian; Kono, Takanori; Konoplich, Rostislav; Konstantinidis, Nikolaos; Kopeliansky, Revital; Koperny, Stefan; Köpke, Lutz; Kopp, Anna Katharina; Korcyl, Krzysztof; Kordas, Kostantinos; Korn, Andreas; Korol, Aleksandr; Korolkov, Ilya; Korolkova, Elena; Korotkov, Vladislav; Kortner, Oliver; Kortner, Sandra; Kostyukhin, Vadim; Kotov, Sergey; Kotov, Vladislav; Kotwal, Ashutosh; Kourkoumelis, Christine; Kouskoura, Vasiliki; Koutsman, Alex; Kowalewski, Robert Victor; Kowalski, Tadeusz; Kozanecki, Witold; Kozhin, Anatoly; Kral, Vlastimil; Kramarenko, Viktor; Kramberger, Gregor; Krasnopevtsev, Dimitriy; Krasny, Mieczyslaw Witold; Krasznahorkay, Attila; Kraus, Jana; Kravchenko, Anton; Kreiss, Sven; Kretz, Moritz; Kretzschmar, Jan; Kreutzfeldt, Kristof; Krieger, Peter; Kroeninger, Kevin; Kroha, Hubert; Kroll, Joe; Kroseberg, Juergen; Krstic, Jelena; Kruchonak, Uladzimir; Krüger, Hans; Kruker, Tobias; Krumnack, Nils; Krumshteyn, Zinovii; Kruse, Amanda; Kruse, Mark; Kruskal, Michael; Kubik, Petr; Kubota, Takashi; Kuday, Sinan; Kuehn, Susanne; Kugel, Andreas; Kuhl, Andrew; Kuhl, Thorsten; Kukhtin, Victor; Kulchitsky, Yuri; Kuleshov, Sergey; Kuna, Marine; Kunkle, Joshua; Kupco, Alexander; Kurashige, Hisaya; Kurochkin, Yurii; Kurumida, Rie; Kus, Vlastimil; Kuwertz, Emma Sian; Kuze, Masahiro; Kvita, Jiri; La Rosa, Alessandro; La Rotonda, Laura; Lacasta, Carlos; Lacava, Francesco; Lacey, James; Lacker, Heiko; Lacour, Didier; Lacuesta, Vicente Ramón; Ladygin, Evgueni; Lafaye, Remi; Laforge, Bertrand; Lagouri, Theodota; Lai, Stanley; Laier, Heiko; Lambourne, Luke; Lammers, Sabine; Lampen, Caleb; Lampl, Walter; Lançon, Eric; Landgraf, Ulrich; Landon, Murrough; Lang, Valerie Susanne; Lange, Clemens; Lankford, Andrew; Lanni, Francesco; Lantzsch, Kerstin; Laplace, Sandrine; Lapoire, Cecile; Laporte, Jean-Francois; Lari, Tommaso; Lassnig, Mario; Laurelli, Paolo; Lavrijsen, Wim; Law, Alexander; Laycock, Paul; Le, Bao Tran; Le Dortz, Olivier; Le Guirriec, Emmanuel; Le Menedeu, Eve; LeCompte, Thomas; Ledroit-Guillon, Fabienne Agnes Marie; Lee, Claire Alexandra; Lee, Hurng-Chun; Lee, Jason; Lee, Shih-Chang; Lee, Lawrence; Lefebvre, Guillaume; Lefebvre, Michel; Legger, Federica; Leggett, Charles; Lehan, Allan; Lehmacher, Marc; Lehmann Miotto, Giovanna; Lei, Xiaowen; Leister, Andrew Gerard; Leite, Marco Aurelio Lisboa; Leitner, Rupert; Lellouch, Daniel; Lemmer, Boris; Leney, Katharine; Lenz, Tatjana; Lenzen, Georg; Lenzi, Bruno; Leone, Robert; Leonhardt, Kathrin; Leontsinis, Stefanos; Leroy, Claude; Lester, Christopher; Lester, Christopher Michael; Levchenko, Mikhail; Levêque, Jessica; Levin, Daniel; Levinson, Lorne; Levy, Mark; Lewis, Adrian; Lewis, George; Leyko, Agnieszka; Leyton, Michael; Li, Bing; Li, Bo; Li, Haifeng; Li, Ho Ling; Li, Liang; Li, Shu; Li, Yichen; Liang, Zhijun; Liao, Hongbo; Liberti, Barbara; Lichard, Peter; Lie, Ki; Liebal, Jessica; Liebig, Wolfgang; Limbach, Christian; Limosani, Antonio; Limper, Maaike; Lin, Simon; Linde, Frank; Lindquist, Brian Edward; Linnemann, James; Lipeles, Elliot; Lipniacka, Anna; Lisovyi, Mykhailo; Liss, Tony; Lissauer, David; Lister, Alison; Litke, Alan; Liu, Bo; Liu, Dong; Liu, Jianbei; Liu, Kun; Liu, Lulu; Liu, Miaoyuan; Liu, Minghui; Liu, Yanwen; Livan, Michele; Livermore, Sarah; Lleres, Annick; Llorente Merino, Javier; Lloyd, Stephen; Lo Sterzo, Francesco; Lobodzinska, Ewelina; Loch, Peter; Lockman, William; Loddenkoetter, Thomas; Loebinger, Fred; Loevschall-Jensen, Ask Emil; Loginov, Andrey; Loh, Chang Wei; Lohse, Thomas; Lohwasser, Kristin; Lokajicek, Milos; Lombardo, Vincenzo Paolo; Long, Brian Alexander; Long, Jonathan; Long, Robin Eamonn; Lopes, Lourenco; Lopez Mateos, David; Lopez Paredes, Brais; Lorenz, Jeanette; Lorenzo Martinez, Narei; Losada, Marta; Loscutoff, Peter; Lou, XinChou; Lounis, Abdenour; Love, Jeremy; Love, Peter; Lowe, Andrew; Lu, Feng; Lubatti, Henry; Luci, Claudio; Lucotte, Arnaud; Luehring, Frederick; Lukas, Wolfgang; Luminari, Lamberto; Lundberg, Olof; Lund-Jensen, Bengt; Lungwitz, Matthias; Lynn, David; Lysak, Roman; Lytken, Else; Ma, Hong; Ma, Lian Liang; Maccarrone, Giovanni; Macchiolo, Anna; Machado Miguens, Joana; Macina, Daniela; Madaffari, Daniele; Madar, Romain; Maddocks, Harvey Jonathan; Mader, Wolfgang; Madsen, Alexander; Maeno, Mayuko; Maeno, Tadashi; Magradze, Erekle; Mahboubi, Kambiz; Mahlstedt, Joern; Mahmoud, Sara; Maiani, Camilla; Maidantchik, Carmen; Maio, Amélia; Majewski, Stephanie; Makida, Yasuhiro; Makovec, Nikola; Mal, Prolay; Malaescu, Bogdan; Malecki, Pawel; Maleev, Victor; Malek, Fairouz; Mallik, Usha; Malon, David; Malone, Caitlin; Maltezos, Stavros; Malyshev, Vladimir; Malyukov, Sergei; Mamuzic, Judita; Mandelli, Beatrice; Mandelli, Luciano; Mandić, Igor; Mandrysch, Rocco; Maneira, José; Manfredini, Alessandro; Manhaes de Andrade Filho, Luciano; Manjarres Ramos, Joany Andreina; Mann, Alexander; Manning, Peter; Manousakis-Katsikakis, Arkadios; Mansoulie, Bruno; Mantifel, Rodger; Mapelli, Livio; March, Luis; Marchand, Jean-Francois; Marchiori, Giovanni; Marcisovsky, Michal; Marino, Christopher; Marques, Carlos; Marroquim, Fernando; Marsden, Stephen Philip; Marshall, Zach; Marti, Lukas Fritz; Marti-Garcia, Salvador; Martin, Brian; Martin, Brian Thomas; Martin, Jean-Pierre; Martin, Tim; Martin, Victoria Jane; Martin dit Latour, Bertrand; Martinez, Homero; Martinez, Mario; Martin-Haugh, Stewart; Martyniuk, Alex; Marx, Marilyn; Marzano, Francesco; Marzin, Antoine; Masetti, Lucia; Mashimo, Tetsuro; Mashinistov, Ruslan; Masik, Jiri; Maslennikov, Alexey; Massa, Ignazio; Massol, Nicolas; Mastrandrea, Paolo; Mastroberardino, Anna; Masubuchi, Tatsuya; Matricon, Pierre; Matsunaga, Hiroyuki; Matsushita, Takashi; Mättig, Peter; Mättig, Stefan; Mattmann, Johannes; Maurer, Julien; Maxfield, Stephen; Maximov, Dmitriy; Mazini, Rachid; Mazzaferro, Luca; Mc Goldrick, Garrin; Mc Kee, Shawn Patrick; McCarn, Allison; McCarthy, Robert; McCarthy, Tom; McCubbin, Norman; McFarlane, Kenneth; Mcfayden, Josh; Mchedlidze, Gvantsa; Mclaughlan, Tom; McMahon, Steve; McPherson, Robert; Meade, Andrew; Mechnich, Joerg; Medinnis, Michael; Meehan, Samuel; Mehlhase, Sascha; Mehta, Andrew; Meier, Karlheinz; Meineck, Christian; Meirose, Bernhard; Melachrinos, Constantinos; Mellado Garcia, Bruce Rafael; Meloni, Federico; Mengarelli, Alberto; Menke, Sven; Meoni, Evelin; Mercurio, Kevin Michael; Mergelmeyer, Sebastian; Meric, Nicolas; Mermod, Philippe; Merola, Leonardo; Meroni, Chiara; Merritt, Frank; Merritt, Hayes; Messina, Andrea; Metcalfe, Jessica; Mete, Alaettin Serhan; Meyer, Carsten; Meyer, Christopher; Meyer, Jean-Pierre; Meyer, Jochen; Middleton, Robin; Migas, Sylwia; Mijović, Liza; Mikenberg, Giora; Mikestikova, Marcela; Mikuž, Marko; Miller, David; Mills, Corrinne; Milov, Alexander; Milstead, David; Milstein, Dmitry; Minaenko, Andrey; Miñano Moya, Mercedes; Minashvili, Irakli; Mincer, Allen; Mindur, Bartosz; Mineev, Mikhail; Ming, Yao; Mir, Lluisa-Maria; Mirabelli, Giovanni; Mitani, Takashi; Mitrevski, Jovan; Mitsou, Vasiliki A; Mitsui, Shingo; Miucci, Antonio; Miyagawa, Paul; Mjörnmark, Jan-Ulf; Moa, Torbjoern; Mochizuki, Kazuya; Moeller, Victoria; Mohapatra, Soumya; Mohr, Wolfgang; Molander, Simon; Moles-Valls, Regina; Mönig, Klaus; Monini, Caterina; Monk, James; Monnier, Emmanuel; Montejo Berlingen, Javier; Monticelli, Fernando; Monzani, Simone; Moore, Roger; Moraes, Arthur; Morange, Nicolas; Morel, Julien; Moreno, Deywis; Moreno Llácer, María; Morettini, Paolo; Morgenstern, Marcus; Morii, Masahiro; Moritz, Sebastian; Morley, Anthony Keith; Mornacchi, Giuseppe; Morris, John; Morvaj, Ljiljana; Moser, Hans-Guenther; Mosidze, Maia; Moss, Josh; Mount, Richard; Mountricha, Eleni; Mouraviev, Sergei; Moyse, Edward; Muanza, Steve; Mudd, Richard; Mueller, Felix; Mueller, James; Mueller, Klemens; Mueller, Thibaut; Mueller, Timo; Muenstermann, Daniel; Munwes, Yonathan; Murillo Quijada, Javier Alberto; Murray, Bill; Musheghyan, Haykuhi; Musto, Elisa; Myagkov, Alexey; Myska, Miroslav; Nackenhorst, Olaf; Nadal, Jordi; Nagai, Koichi; Nagai, Ryo; Nagai, Yoshikazu; Nagano, Kunihiro; Nagarkar, Advait; Nagasaka, Yasushi; Nagel, Martin; Nairz, Armin Michael; Nakahama, Yu; Nakamura, Koji; Nakamura, Tomoaki; Nakano, Itsuo; Namasivayam, Harisankar; Nanava, Gizo; Narayan, Rohin; Nattermann, Till; Naumann, Thomas; Navarro, Gabriela; Nayyar, Ruchika; Neal, Homer; Nechaeva, Polina; Neep, Thomas James; Negri, Andrea; Negri, Guido; Negrini, Matteo; Nektarijevic, Snezana; Nelson, Andrew; Nelson, Timothy Knight; Nemecek, Stanislav; Nemethy, Peter; Nepomuceno, Andre Asevedo; Nessi, Marzio; Neubauer, Mark; Neumann, Manuel; Neves, Ricardo; Nevski, Pavel; Newcomer, Mitchel; Newman, Paul; Nguyen, Duong Hai; Nickerson, Richard; Nicolaidou, Rosy; Nicquevert, Bertrand; Nielsen, Jason; Nikiforou, Nikiforos; Nikiforov, Andriy; Nikolaenko, Vladimir; Nikolic-Audit, Irena; Nikolics, Katalin; Nikolopoulos, Konstantinos; Nilsson, Paul; Ninomiya, Yoichi; Nisati, Aleandro; Nisius, Richard; Nobe, Takuya; Nodulman, Lawrence; Nomachi, Masaharu; Nomidis, Ioannis; Norberg, Scarlet; Nordberg, Markus; Nowak, Sebastian; Nozaki, Mitsuaki; Nozka, Libor; Ntekas, Konstantinos; Nunes Hanninger, Guilherme; Nunnemann, Thomas; Nurse, Emily; Nuti, Francesco; O'Brien, Brendan Joseph; O'grady, Fionnbarr; O'Neil, Dugan; O'Shea, Val; Oakham, Gerald; Oberlack, Horst; Obermann, Theresa; Ocariz, Jose; Ochi, Atsuhiko; Ochoa, Ines; Oda, Susumu; Odaka, Shigeru; Ogren, Harold; Oh, Alexander; Oh, Seog; Ohm, Christian; Ohman, Henrik; Ohshima, Takayoshi; Okamura, Wataru; Okawa, Hideki; Okumura, Yasuyuki; Okuyama, Toyonobu; Olariu, Albert; Olchevski, Alexander; Olivares Pino, Sebastian Andres; Oliveira Damazio, Denis; Oliver Garcia, Elena; Olszewski, Andrzej; Olszowska, Jolanta; Onofre, António; Onyisi, Peter; Oram, Christopher; Oreglia, Mark; Oren, Yona; Orestano, Domizia; Orlando, Nicola; Oropeza Barrera, Cristina; Orr, Robert; Osculati, Bianca; Ospanov, Rustem; Otero y Garzon, Gustavo; Otono, Hidetoshi; Ouchrif, Mohamed; Ouellette, Eric; Ould-Saada, Farid; Ouraou, Ahmimed; Oussoren, Koen Pieter; Ouyang, Qun; Ovcharova, Ana; Owen, Mark; Ozcan, Veysi Erkcan; Ozturk, Nurcan; Pachal, Katherine; Pacheco Pages, Andres; Padilla Aranda, Cristobal; Pagáčová, Martina; Pagan Griso, Simone; Paganis, Efstathios; Pahl, Christoph; Paige, Frank; Pais, Preema; Pajchel, Katarina; Palacino, Gabriel; Palestini, Sandro; Pallin, Dominique; Palma, Alberto; Palmer, Jody; Pan, Yibin; Panagiotopoulou, Evgenia; Panduro Vazquez, William; Pani, Priscilla; Panikashvili, Natalia; Panitkin, Sergey; Pantea, Dan; Paolozzi, Lorenzo; Papadopoulou, Theodora; Papageorgiou, Konstantinos; Paramonov, Alexander; Paredes Hernandez, Daniela; Parker, Michael Andrew; Parodi, Fabrizio; Parsons, John; Parzefall, Ulrich; Pasqualucci, Enrico; Passaggio, Stefano; Passeri, Antonio; Pastore, Fernanda; Pastore, Francesca; Pásztor, Gabriella; Pataraia, Sophio; Patel, Nikhul; Pater, Joleen; Patricelli, Sergio; Pauly, Thilo; Pearce, James; Pedersen, Maiken; Pedraza Lopez, Sebastian; Pedro, Rute; Peleganchuk, Sergey; Pelikan, Daniel; Peng, Haiping; Penning, Bjoern; Penwell, John; Perepelitsa, Dennis; Perez Codina, Estel; Pérez García-Estañ, María Teresa; Perez Reale, Valeria; Perini, Laura; Pernegger, Heinz; Perrino, Roberto; Peschke, Richard; Peshekhonov, Vladimir; Peters, Krisztian; Peters, Yvonne; Petersen, Brian; Petersen, Jorgen; Petersen, Troels; Petit, Elisabeth; Petridis, Andreas; Petridou, Chariclia; Petrolo, Emilio; Petrucci, Fabrizio; Petteni, Michele; Pettersson, Nora Emilia; Pezoa, Raquel; Phillips, Peter William; Piacquadio, Giacinto; Pianori, Elisabetta; Picazio, Attilio; Piccaro, Elisa; Piccinini, Maurizio; Piegaia, Ricardo; Pieron, Jacek Piotr; Pignotti, David; Pilcher, James; Pilkington, Andrew; Pina, João Antonio; Pinamonti, Michele; Pinder, Alex; Pinfold, James; Pingel, Almut; Pinto, Belmiro; Pires, Sylvestre; Pitt, Michael; Pizio, Caterina; Pleier, Marc-Andre; Pleskot, Vojtech; Plotnikova, Elena; Plucinski, Pawel; Poddar, Sahill; Podlyski, Fabrice; Poettgen, Ruth; Poggioli, Luc; Pohl, David-leon; Pohl, Martin; Polesello, Giacomo; Policicchio, Antonio; Polifka, Richard; Polini, Alessandro; Pollard, Christopher Samuel; Polychronakos, Venetios; Pommès, Kathy; Pontecorvo, Ludovico; Pope, Bernard; Popeneciu, Gabriel Alexandru; Popovic, Dragan; Poppleton, Alan; Portell Bueso, Xavier; Pospelov, Guennady; Pospisil, Stanislav; Potamianos, Karolos; Potrap, Igor; Potter, Christina; Potter, Christopher; Poulard, Gilbert; Poveda, Joaquin; Pozdnyakov, Valery; Pralavorio, Pascal; Pranko, Aliaksandr; Prasad, Srivas; Pravahan, Rishiraj; Prell, Soeren; Price, Darren; Price, Joe; Price, Lawrence; Prieur, Damien; Primavera, Margherita; Proissl, Manuel; Prokofiev, Kirill; Prokoshin, Fedor; Protopapadaki, Eftychia-sofia; Protopopescu, Serban; Proudfoot, James; Przybycien, Mariusz; Przysiezniak, Helenka; Ptacek, Elizabeth; Pueschel, Elisa; Puldon, David; Purohit, Milind; Puzo, Patrick; Qian, Jianming; Qin, Gang; Qin, Yang; Quadt, Arnulf; Quarrie, David; Quayle, William; Quilty, Donnchadha; Qureshi, Anum; Radeka, Veljko; Radescu, Voica; Radhakrishnan, Sooraj Krishnan; Radloff, Peter; Rados, Pere; Ragusa, Francesco; Rahal, Ghita; Rajagopalan, Srinivasan; Rammensee, Michael; Randle-Conde, Aidan Sean; Rangel-Smith, Camila; Rao, Kanury; Rauscher, Felix; Rave, Tobias Christian; Ravenscroft, Thomas; Raymond, Michel; Read, Alexander Lincoln; Rebuzzi, Daniela; Redelbach, Andreas; Redlinger, George; Reece, Ryan; Reeves, Kendall; Rehnisch, Laura; Reinsch, Andreas; Reisin, Hernan; Relich, Matthew; Rembser, Christoph; Ren, Zhongliang; Renaud, Adrien; Rescigno, Marco; Resconi, Silvia; Resende, Bernardo; Rezanova, Olga; Reznicek, Pavel; Rezvani, Reyhaneh; Richter, Robert; Ridel, Melissa; Rieck, Patrick; Rijssenbeek, Michael; Rimoldi, Adele; Rinaldi, Lorenzo; Ritsch, Elmar; Riu, Imma; Rizatdinova, Flera; Rizvi, Eram; Robertson, Steven; Robichaud-Veronneau, Andree; Robinson, Dave; Robinson, James; Robson, Aidan; Roda, Chiara; Rodrigues, Luis; Roe, Shaun; Røhne, Ole; Rolli, Simona; Romaniouk, Anatoli; Romano, Marino; Romeo, Gaston; Romero Adam, Elena; Rompotis, Nikolaos; Roos, Lydia; Ros, Eduardo; Rosati, Stefano; Rosbach, Kilian; Rose, Matthew; Rosendahl, Peter Lundgaard; Rosenthal, Oliver; Rossetti, Valerio; Rossi, Elvira; Rossi, Leonardo Paolo; Rosten, Rachel; Rotaru, Marina; Roth, Itamar; Rothberg, Joseph; Rousseau, David; Royon, Christophe; Rozanov, Alexandre; Rozen, Yoram; Ruan, Xifeng; Rubbo, Francesco; Rubinskiy, Igor; Rud, Viacheslav; Rudolph, Christian; Rudolph, Matthew Scott; Rühr, Frederik; Ruiz-Martinez, Aranzazu; Rurikova, Zuzana; Rusakovich, Nikolai; Ruschke, Alexander; Rutherfoord, John; Ruthmann, Nils; Ryabov, Yury; Rybar, Martin; Rybkin, Grigori; Ryder, Nick; Saavedra, Aldo; Sacerdoti, Sabrina; Saddique, Asif; Sadeh, Iftach; Sadrozinski, Hartmut; Sadykov, Renat; Safai Tehrani, Francesco; Sakamoto, Hiroshi; Sakurai, Yuki; Salamanna, Giuseppe; Salamon, Andrea; Saleem, Muhammad; Salek, David; Sales De Bruin, Pedro Henrique; Salihagic, Denis; Salnikov, Andrei; Salt, José; Salvachua Ferrando, Belén; Salvatore, Daniela; Salvatore, Pasquale Fabrizio; Salvucci, Antonio; Salzburger, Andreas; Sampsonidis, Dimitrios; Sanchez, Arturo; Sánchez, Javier; Sanchez Martinez, Victoria; Sandaker, Heidi; Sandbach, Ruth Laura; Sander, Heinz Georg; Sanders, Michiel; Sandhoff, Marisa; Sandoval, Tanya; Sandoval, Carlos; Sandstroem, Rikard; Sankey, Dave; Sansoni, Andrea; Santoni, Claudio; Santonico, Rinaldo; Santos, Helena; Santoyo Castillo, Itzebelt; Sapp, Kevin; Sapronov, Andrey; Saraiva, João; Sarrazin, Bjorn; Sartisohn, Georg; Sasaki, Osamu; Sasaki, Yuichi; Satsounkevitch, Igor; Sauvage, Gilles; Sauvan, Emmanuel; Savard, Pierre; Savu, Dan Octavian; Sawyer, Craig; Sawyer, Lee; Saxon, James; Sbarra, Carla; Sbrizzi, Antonio; Scanlon, Tim; Scannicchio, Diana; Scarcella, Mark; Schaarschmidt, Jana; Schacht, Peter; Schaefer, Douglas; Schaefer, Ralph; Schaepe, Steffen; Schaetzel, Sebastian; Schäfer, Uli; Schaffer, Arthur; Schaile, Dorothee; Schamberger, R. Dean; Scharf, Veit; Schegelsky, Valery; Scheirich, Daniel; Schernau, Michael; Scherzer, Max; Schiavi, Carlo; Schieck, Jochen; Schillo, Christian; Schioppa, Marco; Schlenker, Stefan; Schmidt, Evelyn; Schmieden, Kristof; Schmitt, Christian; Schmitt, Christopher; Schmitt, Sebastian; Schneider, Basil; Schnellbach, Yan Jie; Schnoor, Ulrike; Schoeffel, Laurent; Schoening, Andre; Schoenrock, Bradley Daniel; Schorlemmer, Andre Lukas; Schott, Matthias; Schouten, Doug; Schovancova, Jaroslava; Schram, Malachi; Schramm, Steven; Schreyer, Manuel; Schroeder, Christian; Schuh, Natascha; Schultens, Martin Johannes; Schultz-Coulon, Hans-Christian; Schulz, Holger; Schumacher, Markus; Schumm, Bruce; Schune, Philippe; Schwartzman, Ariel; Schwegler, Philipp; Schwemling, Philippe; Schwienhorst, Reinhard; Schwindling, Jerome; Schwindt, Thomas; Schwoerer, Maud; Sciacca, Gianfranco; Scifo, Estelle; Sciolla, Gabriella; Scott, Bill; Scuri, Fabrizio; Scutti, Federico; Searcy, Jacob; Sedov, George; Sedykh, Evgeny; Seidel, Sally; Seiden, Abraham; Seifert, Frank; Seixas, José; Sekhniaidze, Givi; Sekula, Stephen; Selbach, Karoline Elfriede; Seliverstov, Dmitry; Sellers, Graham; Semprini-Cesari, Nicola; Serfon, Cedric; Serin, Laurent; Serkin, Leonid; Serre, Thomas; Seuster, Rolf; Severini, Horst; Sforza, Federico; Sfyrla, Anna; Shabalina, Elizaveta; Shamim, Mansoora; Shan, Lianyou; Shank, James; Shao, Qi Tao; Shapiro, Marjorie; Shatalov, Pavel; Shaw, Kate; Shaw, Rick; Sherwood, Peter; Shimizu, Shima; Shimmin, Chase Owen; Shimojima, Makoto; Shiyakova, Mariya; Shmeleva, Alevtina; Shochet, Mel; Short, Daniel; Shrestha, Suyog; Shulga, Evgeny; Shupe, Michael; Shushkevich, Stanislav; Sicho, Petr; Sidorov, Dmitri; Sidoti, Antonio; Siegert, Frank; Sijacki, Djordje; Silbert, Ohad; Silva, José; Silver, Yiftah; Silverstein, Daniel; Silverstein, Samuel; Simak, Vladislav; Simard, Olivier; Simic, Ljiljana; Simion, Stefan; Simioni, Eduard; Simmons, Brinick; Simoniello, Rosa; Simonyan, Margar; Sinervo, Pekka; Sinev, Nikolai; Sipica, Valentin; Siragusa, Giovanni; Sircar, Anirvan; Sisakyan, Alexei; Sivoklokov, Serguei; Sjölin, Jörgen; Sjursen, Therese; Skottowe, Hugh Philip; Skovpen, Kirill; Skubic, Patrick; Slater, Mark; Slavicek, Tomas; Sliwa, Krzysztof; Smakhtin, Vladimir; Smart, Ben; Smestad, Lillian; Smirnov, Sergei; Smirnov, Yury; Smirnova, Lidia; Smirnova, Oxana; Smizanska, Maria; Smolek, Karel; Snesarev, Andrei; Snidero, Giacomo; Snow, Joel; Snyder, Scott; Sobie, Randall; Socher, Felix; Sodomka, Jaromir; Soffer, Abner; Soh, Dart-yin; Solans, Carlos; Solar, Michael; Solc, Jaroslav; Soldatov, Evgeny; Soldevila, Urmila; Solfaroli Camillocci, Elena; Solodkov, Alexander; Solovyanov, Oleg; Solovyev, Victor; Sommer, Philip; Song, Hong Ye; Soni, Nitesh; Sood, Alexander; Sopczak, Andre; Sopko, Vit; Sopko, Bruno; Sorin, Veronica; Sosebee, Mark; Soualah, Rachik; Soueid, Paul; Soukharev, Andrey; South, David; Spagnolo, Stefania; Spanò, Francesco; Spearman, William Robert; Spighi, Roberto; Spigo, Giancarlo; Spousta, Martin; Spreitzer, Teresa; Spurlock, Barry; St Denis, Richard Dante; Staerz, Steffen; Stahlman, Jonathan; Stamen, Rainer; Stanecka, Ewa; Stanek, Robert; Stanescu, Cristian; Stanescu-Bellu, Madalina; Stanitzki, Marcel Michael; Stapnes, Steinar; Starchenko, Evgeny; Stark, Jan; Staroba, Pavel; Starovoitov, Pavel; Staszewski, Rafal; Stavina, Pavel; Steele, Genevieve; Steinberg, Peter; Stekl, Ivan; Stelzer, Bernd; Stelzer, Harald Joerg; Stelzer-Chilton, Oliver; Stenzel, Hasko; Stern, Sebastian; Stewart, Graeme; Stillings, Jan Andre; Stockton, Mark; Stoebe, Michael; Stoicea, Gabriel; Stolte, Philipp; Stonjek, Stefan; Stradling, Alden; Straessner, Arno; Stramaglia, Maria Elena; Strandberg, Jonas; Strandberg, Sara; Strandlie, Are; Strauss, Emanuel; Strauss, Michael; Strizenec, Pavol; Ströhmer, Raimund; Strom, David; Stroynowski, Ryszard; Stucci, Stefania Antonia; Stugu, Bjarne; Styles, Nicholas Adam; Su, Dong; Su, Jun; Subramania, Halasya Siva; Subramaniam, Rajivalochan; Succurro, Antonella; Sugaya, Yorihito; Suhr, Chad; Suk, Michal; Sulin, Vladimir; Sultansoy, Saleh; Sumida, Toshi; Sun, Xiaohu; Sundermann, Jan Erik; Suruliz, Kerim; Susinno, Giancarlo; Sutton, Mark; Suzuki, Yu; Svatos, Michal; Swedish, Stephen; Swiatlowski, Maximilian; Sykora, Ivan; Sykora, Tomas; Ta, Duc; Tackmann, Kerstin; Taenzer, Joe; Taffard, Anyes; Tafirout, Reda; Taiblum, Nimrod; Takahashi, Yuta; Takai, Helio; Takashima, Ryuichi; Takeda, Hiroshi; Takeshita, Tohru; Takubo, Yosuke; Talby, Mossadek; Talyshev, Alexey; Tam, Jason; Tamsett, Matthew; Tan, Kong Guan; Tanaka, Junichi; Tanaka, Reisaburo; Tanaka, Satoshi; Tanaka, Shuji; Tanasijczuk, Andres Jorge; Tani, Kazutoshi; Tannoury, Nancy; Tapprogge, Stefan; Tarem, Shlomit; Tarrade, Fabien; Tartarelli, Giuseppe Francesco; Tas, Petr; Tasevsky, Marek; Tashiro, Takuya; Tassi, Enrico; Tavares Delgado, Ademar; Tayalati, Yahya; Taylor, Frank; Taylor, Geoffrey; Taylor, Wendy; Teischinger, Florian Alfred; Teixeira Dias Castanheira, Matilde; Teixeira-Dias, Pedro; Temming, Kim Katrin; Ten Kate, Herman; Teng, Ping-Kun; Terada, Susumu; Terashi, Koji; Terron, Juan; Terzo, Stefano; Testa, Marianna; Teuscher, Richard; Therhaag, Jan; Theveneaux-Pelzer, Timothée; Thoma, Sascha; Thomas, Juergen; Thomas-Wilsker, Joshuha; Thompson, Emily; Thompson, Paul; Thompson, Peter; Thompson, Stan; Thomsen, Lotte Ansgaard; Thomson, Evelyn; Thomson, Mark; Thong, Wai Meng; Thun, Rudolf; Tian, Feng; Tibbetts, Mark James; Tikhomirov, Vladimir; Tikhonov, Yury; Timoshenko, Sergey; Tiouchichine, Elodie; Tipton, Paul; Tisserant, Sylvain; Todorov, Theodore; Todorova-Nova, Sharka; Toggerson, Brokk; Tojo, Junji; Tokár, Stanislav; Tokushuku, Katsuo; Tollefson, Kirsten; Tomlinson, Lee; Tomoto, Makoto; Tompkins, Lauren; Toms, Konstantin; Topilin, Nikolai; Torrence, Eric; Torres, Heberth; Torró Pastor, Emma; Toth, Jozsef; Touchard, Francois; Tovey, Daniel; Tran, Huong Lan; Trefzger, Thomas; Tremblet, Louis; Tricoli, Alessandro; Trigger, Isabel Marian; Trincaz-Duvoid, Sophie; Tripiana, Martin; Triplett, Nathan; Trischuk, William; Trocmé, Benjamin; Troncon, Clara; Trottier-McDonald, Michel; Trovatelli, Monica; True, Patrick; Trzebinski, Maciej; Trzupek, Adam; Tsarouchas, Charilaos; Tseng, Jeffrey; Tsiareshka, Pavel; Tsionou, Dimitra; Tsipolitis, Georgios; Tsirintanis, Nikolaos; Tsiskaridze, Shota; Tsiskaridze, Vakhtang; Tskhadadze, Edisher; Tsukerman, Ilya; Tsulaia, Vakhtang; Tsuno, Soshi; Tsybychev, Dmitri; Tudorache, Alexandra; Tudorache, Valentina; Tuna, Alexander Naip; Tupputi, Salvatore; Turchikhin, Semen; Turecek, Daniel; Turk Cakir, Ilkay; Turra, Ruggero; Tuts, Michael; Tykhonov, Andrii; Tylmad, Maja; Tyndel, Mike; Uchida, Kirika; Ueda, Ikuo; Ueno, Ryuichi; Ughetto, Michael; Ugland, Maren; Uhlenbrock, Mathias; Ukegawa, Fumihiko; Unal, Guillaume; Undrus, Alexander; Unel, Gokhan; Ungaro, Francesca; Unno, Yoshinobu; Urbaniec, Dustin; Urquijo, Phillip; Usai, Giulio; Usanova, Anna; Vacavant, Laurent; Vacek, Vaclav; Vachon, Brigitte; Valencic, Nika; Valentinetti, Sara; Valero, Alberto; Valery, Loic; Valkar, Stefan; Valladolid Gallego, Eva; Vallecorsa, Sofia; Valls Ferrer, Juan Antonio; Van Berg, Richard; Van Der Deijl, Pieter; van der Geer, Rogier; van der Graaf, Harry; Van Der Leeuw, Robin; van der Ster, Daniel; van Eldik, Niels; van Gemmeren, Peter; Van Nieuwkoop, Jacobus; van Vulpen, Ivo; van Woerden, Marius Cornelis; Vanadia, Marco; Vandelli, Wainer; Vanguri, Rami; Vaniachine, Alexandre; Vankov, Peter; Vannucci, Francois; Vardanyan, Gagik; Vari, Riccardo; Varnes, Erich; Varol, Tulin; Varouchas, Dimitris; Vartapetian, Armen; Varvell, Kevin; Vazeille, Francois; Vazquez Schroeder, Tamara; Veatch, Jason; Veloso, Filipe; Veneziano, Stefano; Ventura, Andrea; Ventura, Daniel; Venturi, Manuela; Venturi, Nicola; Venturini, Alessio; Vercesi, Valerio; Verducci, Monica; Verkerke, Wouter; Vermeulen, Jos; Vest, Anja; Vetterli, Michel; Viazlo, Oleksandr; Vichou, Irene; Vickey, Trevor; Vickey Boeriu, Oana Elena; Viehhauser, Georg; Viel, Simon; Vigne, Ralph; Villa, Mauro; Villaplana Perez, Miguel; Vilucchi, Elisabetta; Vincter, Manuella; Vinogradov, Vladimir; Virzi, Joseph; Vivarelli, Iacopo; Vives Vaque, Francesc; Vlachos, Sotirios; Vladoiu, Dan; Vlasak, Michal; Vogel, Adrian; Vokac, Petr; Volpi, Guido; Volpi, Matteo; von der Schmitt, Hans; von Radziewski, Holger; von Toerne, Eckhard; Vorobel, Vit; Vorobev, Konstantin; Vos, Marcel; Voss, Rudiger; Vossebeld, Joost; Vranjes, Nenad; Vranjes Milosavljevic, Marija; Vrba, Vaclav; Vreeswijk, Marcel; Vu Anh, Tuan; Vuillermet, Raphael; Vukotic, Ilija; Vykydal, Zdenek; Wagner, Wolfgang; Wagner, Peter; Wahrmund, Sebastian; Wakabayashi, Jun; Walder, James; Walker, Rodney; Walkowiak, Wolfgang; Wall, Richard; Waller, Peter; Walsh, Brian; Wang, Chao; Wang, Chiho; Wang, Fuquan; Wang, Haichen; Wang, Hulin; Wang, Jike; Wang, Jin; Wang, Kuhan; Wang, Rui; Wang, Song-Ming; Wang, Tan; Wang, Xiaoxiao; Wanotayaroj, Chaowaroj; Warburton, Andreas; Ward, Patricia; Wardrope, David Robert; Warren, Matthew; Warsinsky, Markus; Washbrook, Andrew; Wasicki, Christoph; Watanabe, Ippei; Watkins, Peter; Watson, Alan; Watson, Ian; Watson, Miriam; Watts, Gordon; Watts, Stephen; Waugh, Ben; Webb, Samuel; Weber, Michele; Weber, Stefan Wolf; Webster, Jordan S; Weidberg, Anthony; Weigell, Philipp; Weinert, Benjamin; Weingarten, Jens; Weiser, Christian; Weits, Hartger; Wells, Phillippa; Wenaus, Torre; Wendland, Dennis; Weng, Zhili; Wengler, Thorsten; Wenig, Siegfried; Wermes, Norbert; Werner, Matthias; Werner, Per; Wessels, Martin; Wetter, Jeffrey; Whalen, Kathleen; White, Andrew; White, Martin; White, Ryan; White, Sebastian; Whiteson, Daniel; Wicke, Daniel; Wickens, Fred; Wiedenmann, Werner; Wielers, Monika; Wienemann, Peter; Wiglesworth, Craig; Wiik-Fuchs, Liv Antje Mari; Wijeratne, Peter Alexander; Wildauer, Andreas; Wildt, Martin Andre; Wilkens, Henric George; Will, Jonas Zacharias; Williams, Hugh; Williams, Sarah; Willis, Christopher; Willocq, Stephane; Wilson, John; Wilson, Alan; Wingerter-Seez, Isabelle; Winklmeier, Frank; Wittgen, Matthias; Wittig, Tobias; Wittkowski, Josephine; Wollstadt, Simon Jakob; Wolter, Marcin Wladyslaw; Wolters, Helmut; Wosiek, Barbara; Wotschack, Jorg; Woudstra, Martin; Wozniak, Krzysztof; Wright, Michael; Wu, Mengqing; Wu, Sau Lan; Wu, Xin; Wu, Yusheng; Wulf, Evan; Wyatt, Terry Richard; Wynne, Benjamin; Xella, Stefania; Xiao, Meng; Xu, Da; Xu, Lailin; Yabsley, Bruce; Yacoob, Sahal; Yamada, Miho; Yamaguchi, Hiroshi; Yamaguchi, Yohei; Yamamoto, Akira; Yamamoto, Kyoko; Yamamoto, Shimpei; Yamamura, Taiki; Yamanaka, Takashi; Yamauchi, Katsuya; Yamazaki, Yuji; Yan, Zhen; Yang, Haijun; Yang, Hongtao; Yang, Un-Ki; Yang, Yi; Yanush, Serguei; Yao, Liwen; Yao, Weiming; Yasu, Yoshiji; Yatsenko, Elena; Yau Wong, Kaven Henry; Ye, Jingbo; Ye, Shuwei; Yen, Andy L; Yildirim, Eda; Yilmaz, Metin; Yoosoofmiya, Reza; Yorita, Kohei; Yoshida, Rikutaro; Yoshihara, Keisuke; Young, Charles; Young, Christopher John; Youssef, Saul; Yu, David Ren-Hwa; Yu, Jaehoon; Yu, Jiaming; Yu, Jie; Yuan, Li; Yurkewicz, Adam; Zabinski, Bartlomiej; Zaidan, Remi; Zaitsev, Alexander; Zaman, Aungshuman; Zambito, Stefano; Zanello, Lucia; Zanzi, Daniele; Zaytsev, Alexander; Zeitnitz, Christian; Zeman, Martin; Zemla, Andrzej; Zengel, Keith; Zenin, Oleg; Ženiš, Tibor; Zerwas, Dirk; Zevi della Porta, Giovanni; Zhang, Dongliang; Zhang, Fangzhou; Zhang, Huaqiao; Zhang, Jinlong; Zhang, Lei; Zhang, Xueyao; Zhang, Zhiqing; Zhao, Zhengguo; Zhemchugov, Alexey; Zhong, Jiahang; Zhou, Bing; Zhou, Lei; Zhou, Ning; Zhu, Cheng Guang; Zhu, Hongbo; Zhu, Junjie; Zhu, Yingchun; Zhuang, Xuai; Zibell, Andre; Zieminska, Daria; Zimine, Nikolai; Zimmermann, Christoph; Zimmermann, Robert; Zimmermann, Simone; Zimmermann, Stephanie; Zinonos, Zinonas; Ziolkowski, Michael; Zobernig, Georg; Zoccoli, Antonio; zur Nedden, Martin; Zurzolo, Giovanni; Zutshi, Vishnu; Zwalinski, Lukasz

    The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

  14. Semiconductor Electrical Measurements Laboratory (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  15. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro


    This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced. Examples include recent progress in semiconductor quantum structures such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade and the single-electron transistor.

  16. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K


    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  17. Gaseous Detectors: Charged Particle Detectors - Particle Detectors and Detector Systems

    CERN Document Server

    Hilke, H J


    Gaseous Detectors in 'Charged Particle Detectors - Particle Detectors and Detector Systems', part of 'Landolt-Börnstein - Group I Elementary Particles, Nuclei and Atoms: Numerical Data and Functional Relationships in Science and Technology, Volume 21B1: Detectors for Particles and Radiation. Part 1: Principles and Methods'. This document is part of Part 1 'Principles and Methods' of Subvolume B 'Detectors for Particles and Radiation' of Volume 21 'Elementary Particles' of Landolt-Börnstein - Group I 'Elementary Particles, Nuclei and Atoms'. It contains the Subsection '3.1.2 Gaseous Detectors' of Section '3.1 Charged Particle Detectors' of Chapter '3 Particle Detectors and Detector Systems' with the content: 3.1.2 Gaseous Detectors Introduction Basic Processes Gas ionization by charged particles Primary clusters Cluster size distribution Total number of ion pairs Dependence of energy deposit on particle velocity Transport of...

  18. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried


    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  19. High energy semiconductor switch (United States)

    Risberg, R. L.


    The objective was a controller for electric motors. By operating standard Nema B induction motors at variable speed a great deal of energy is saved. This is especially true in pumping and air conditioning applications. To allow wider use of variable speed AC drives, and to provide improved performance, a better semiconductor switch was sought. This was termed the High Energy Semiconductor Switch.

  20. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci


    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  1. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I


    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  2. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H


    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  3. The AlGaAs light emitting particle detector

    CERN Document Server

    Pozela, J; Silenas, A; Juciene, V; Dapkus, L; Jasutis, V; Tamulaitis, G; Zukauskas, A; Bendorius, R A


    An AlGaAs light emitting particle detector was fabricated and investigated experimentally. Light emitting semiconductor Al sub x Ga sub 1 sub - sub x As layers with graded-gap energy band structure were grown, and luminescence spectra were investigated. A light emitting X-ray detector was also fabricated. (author)

  4. Fabrication of Superconducting Detectors for Studying the Universe (United States)

    Brown, Ari-David


    Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.

  5. Optimized differential energy loss estimation for tracker detectors

    CERN Document Server

    Sikler, Ferenc


    The estimation of differential energy loss for charged particles in tracker detectors is studied. The robust truncated mean method can be generalized to the linear combination of the energy deposit measurements. The optimized weights in case of arithmetic and geometric means are obtained using a detailed simulation. The results show better particle separation power for both semiconductor and gaseous detectors.


    DEFF Research Database (Denmark)


    invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...

  7. Solid-State Neutron Detector Device (United States)

    Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)


    The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.

  8. Semiconductor nanowire optical antenna solar absorbers. (United States)

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L


    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology.

  9. Photon detector configured to employ the Gunn effect and method of use (United States)

    Cich, Michael J


    Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

  10. Integrability detectors

    Indian Academy of Sciences (India)


    Oct 29, 2015 ... Abstract. In this short review, we present some applications and historical facts about the integrability detectors: Painlevé analysis, singularity confinement and algebraic entropy.

  11. Photoreflectance Characterization of Semiconductors (United States)

    Bhimnathwala, Hemant Ghanshyamdas

    Photoreflectance technique has been used as a non-destructive probe of surface photo-voltage in doped and semi-insulating semiconductors. A system used to measure the photoreflectance spectra near the fundamental gap of GaAs and InP has been described. Measurements as a function of pump intensity on n and p type GaAs were used to infer the carrier dynamics leading to change in the surface electric field. Measurements indicate that the surface of GaAs consists of hole traps at the surface in addition to recombination states. This is confirmed by spectroscopic studies carried out by varying the pump modulation frequency at fixed temperatures and the measurements show that the hole trap has an activation energy of 0.29 eV and has an emission time of 0.175 +/- 0.002 msec. at room temperature. In semi-insulating GaAs, it is expected that there is no surface electric field at equilibrium due to pinning at the surface and large concentration of deep defect EL2. Electromodulation, in this case proceeds via preferential trapping of holes at the surface. This is supported by measurements carried out as a function of pump intensity and on wafers having different carbon concentrations. Analysis of carrier dynamics in semi-insulating GaAs is much simplified by use of Nd:YAG laser (instead of a HeNe laser) as a source of pump beam. A sub-band -gap excitation generates mainly excess electrons and the Poisson's equation can be integrated once to find the surface electric field. Numerical integration yields the surface photovoltage. It is shown that this technique is sensitive to the the surface state density and relatively insensitive to bulk properties. It has been applied to study the effect of various chemical reactants on the surface state density. In many PR spectra, features at energies less than the gap energy are observed. These are ascribed to shallow acceptors unrelated to carbon, which was the dominant acceptor in these materials. It is proposed that the electric field

  12. Spectroscopy of organic semiconductors from first principles (United States)

    Sharifzadeh, Sahar; Biller, Ariel; Kronik, Leeor; Neaton, Jeffery


    Advances in organic optoelectronic materials rely on an accurate understanding their spectroscopy, motivating the development of predictive theoretical methods that accurately describe the excited states of organic semiconductors. In this work, we use density functional theory and many-body perturbation theory (GW/BSE) to compute the electronic and optical properties of two well-studied organic semiconductors, pentacene and PTCDA. We carefully compare our calculations of the bulk density of states with available photoemission spectra, accounting for the role of finite temperature and surface effects in experiment, and examining the influence of our main approximations -- e.g. the GW starting point and the application of the generalized plasmon-pole model -- on the predicted electronic structure. Moreover, our predictions for the nature of the exciton and its binding energy are discussed and compared against optical absorption data. We acknowledge DOE, NSF, and BASF for financial support and NERSC for computational resources.

  13. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W


    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  14. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati


    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  15. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K


    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  16. 2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

    Energy Technology Data Exchange (ETDEWEB)

    Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)


    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  17. Characterization of Czochralski Silicon Detectors

    CERN Document Server

    Luukka, Panja-Riina


    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alternative for future highenergy physics experiments. In the large hadron collider (LHC), the RH of the detectorsis a critical issue due to the high luminosity (1034 cm-2s-1) corresponding to the expectedtotal fluencies of fast hadrons above 1015 cm-2. This RH improvement is important sinceradiation damage in the detector bulk material reduces the detector performance andbecause some of the devices produced from standard detector-grade silicon, e.g. FZsilicon with negligible oxygen concentration, might not survive the plann...

  18. Investigation of silicon PIN-detector for laser pulse detection


    Chau, Sam


    This report has been written at SAAB Bofors Dynamics (SBD) AB in Gothenburg at the department of optronic systems. In military observation operations, a target to hit is chosen by illumination of a laser designator. From the targetpoint laser radiation is reflected on a detector that helps identify the target. The detector is a semiconductor PIN-type that has been investigated in a laboratory environment together with a specially designed laser source. The detector is a photodiode and using p...

  19. Next decade in infrared detectors (United States)

    Rogalski, A.


    Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

  20. Optical Detectors (United States)

    Tabbert, Bernd; Goushcha, Alexander

    Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  1. Vapor Detector (United States)

    Waddell, H. M.; Garrard, G. C.; Houston, D. W.


    Detector eliminates need for removing covers to take samples. Detector is canister consisting of screw-in base and clear plastic tube that contains two colors of silica gel. Monoethylhydrazine and nitrogen tetroxide vapors are visually monitored with canister containing color-changing gels.

  2. 18th International Workshop on Radiation Imaging Detectors

    CERN Document Server


    The International Workshops on Radiation Imaging Detectors are held yearly and provide an international forum for discussing current research and developments in the area of position sensitive detectors for radiation imaging, including semiconductor detectors, gas and scintillator-based detectors. Topics include processing and characterization of detector materials, hybridization and interconnect technologies, design of counting or integrating electronics, readout and data acquisition systems, and applications in various scientific and industrial fields. The workshop will have plenary sessions with invited and contributed papers presented orally and in poster sessions. The invited talks will be chosen to review recent advances in different areas covered in the workshop.

  3. Antimonide type-II superlattice barrier infrared detectors (United States)

    Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Höglund, Linda; Keo, Sam A.; Rafol, B., , Sir; Hill, Cory J.; Fisher, Anita M.; Luong, Edward M.; Nguyen, Jean; Liu, John K.; Mumolo, Jason M.; Pepper, Brian J.; Gunapala, Sarath D.


    We provide a brief overview of recent progress in III-V semiconductor infrared photodetectors resulting from advances in infrared detector materials, including type-II superlattices (T2SL) and InAsSb alloy, and the unipolar detector architecture. We summarize T2SL unipolar barrier infrared detector and focal plane array development at the NASA Jet Propulsion Laboratory in support of the Vital Infrared Sensor Technology Acceleration (VISTA) Program. We also comment on the connection of T2SL barrier infrared detector to MCT infrared detectors.

  4. Alpha particle response study of polycrstalline diamond radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Amit; Topkar, Anita [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)


    Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

  5. Alignement strategy for the Inner Detector of ATLAS

    CERN Document Server

    Brückman de Renstrom, P


    002704675 ATLAS is a general-purpose spectrometer in preparation for taking data at the Large Hadron Collider at CERN. It will start operation in autumn 2007. Charged particle tracking is realized by the Inner Detector. The Inner Detector consists of two silicon subsystems: a Pixel Detector and a Semiconductor Tracker complemented by straw proportional gas chambers. In order to exploit the excellent intrinsic resolution of the precision tracking devices high accuracy alignment is required. In this report the strategy to align the sub-detectors of the ATLAS Inner Detector is reviewed, together with the current status of preparation. Both track-based and hardware alignment methods are presented.

  6. Heat transport in bulk/nanoporous/bulk silicon devices

    Energy Technology Data Exchange (ETDEWEB)

    Criado-Sancho, M. [Departamento de Ciencias y Técnicas Físicoquimicas, Facultad de Ciencias, UNED, Senda del Rey 9, 20040 Madrid (Spain); Jou, D., E-mail: [Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Institut d' Estudis Catalans, Carme 47, 08001 Barcelona, Catalonia (Spain)


    We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size.

  7. The ATLAS semiconductor tracker: operations and performance

    CERN Document Server

    D'Auria, S; The ATLAS collaboration


    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar {it p}-in-{it n} technology. The signals are processed in the front-end ASICS ABCD3TA, working in binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. We find 99.3% of the SCT modules are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current results from the successful operation of the SCT Detector at the LHC and its status af...

  8. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel


    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  9. Defects in semiconductor nanostructures (United States)

    Singh, Vijay A.; Harbola, Manoj K.; Pathak, Praveen


    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  10. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo


    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  11. "Understanding" cosmological bulk viscosity


    Zimdahl, Winfried


    A universe consisting of two interacting perfect fluids with the same 4-velocity is considered. A heuristic mean free time argument is used to show that the system as a whole cannot be perfect as well but neccessarily implies a nonvanishing bulk viscosity. A new formula for the latter is derived and compared with corresponding results of radiative hydrodynamics.

  12. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.


    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  13. Electrowetting on a semiconductor


    Arscott, Steve; Gaudet, Matthieu


    We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulat...

  14. Mechanical Properties of Semiconductors and Their Alloys (United States)


    centimeters, 3 and must be perfect bulk single crystals. Many semiconductors, alloys in particular, are only grown as thin films on disparate substrates. For...approximation, not due to Harris. Figure 2 is closer to the practical applications our contract is aimed at. We seek a "super- modulus" effect in a thin ...superlattice of CdTe/ ZnTe . In Figure 2, the superlattice consists of alternating monolayers, along the > direction, of CdTe and ZnTe . Interestingly, the

  15. Gaseous Detectors (United States)

    Titov, Maxim

    Since long time, the compelling scientific goals of future high-energy physics experiments were a driving factor in the development of advanced detector technologies. A true innovation in detector instrumentation concepts came in 1968, with the development of a fully parallel readout for a large array of sensing elements - the Multi-Wire Proportional Chamber (MWPC), which earned Georges Charpak a Nobel prize in physics in 1992. Since that time radiation detection and imaging with fast gaseous detectors, capable of economically covering large detection volumes with low mass budget, have been playing an important role in many fields of physics. Advances in photolithography and microprocessing techniques in the chip industry during the past decade triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the next generation of colliders. The design of the new micro-pattern devices appears suitable for industrial production. Novel structures where MPGDs are directly coupled to the CMOS pixel readout represent an exciting field allowing timing and charge measurements as well as precise spatial information in 3D. Originally developed for the high-energy physics, MPGD applications have expanded to nuclear physics, photon detection, astroparticle and neutrino physics, neutron detection, and medical imaging.

  16. Low-temperature tracking detectors

    CERN Document Server

    Niinikoski, T O; Anbinderis, P; Anbinderis, T; D'Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dezillie, B; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Granata, V; Grigoriev, E; Grohmann, S; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, Yu S; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Li, Z; Luukka, Panja; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Nüssle, G; O'Shea, V; Pagano, S; Paul, S; Perea-Solano, B; Piotrzkowski, K; Pirollo, S; Pretzl, K; Rahman, M; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sousa, P; Tuominen, E; Tuovinen, E; Vaitkus, J; Verbitskaya, E; Da Vià, C; Vlasenko, L; Vlasenko, M; Wobst, E; Zavrtanik, M


    RD39 collaboration develops new detector techniques for particle trackers, which have to withstand fluences up to 10/sup 16/ cm/sup -2 / of high-energy particles. The work focuses on the optimization of silicon detectors and their readout electronics while keeping the temperature as a free parameter. Our results so far suggest that the best operating temperature is around 130 K. We shall also describe in this paper how the current-injected mode of operation reduces the polarization of the bulk silicon at low temperatures, and how the engineering and materials problems related with vacuum and low temperature can be solved. (9 refs).

  17. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)


    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  18. Semiconductor quantum dot scintillation under gamma-ray irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Letant, S E; Wang, T


    We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well as security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting

  19. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander


    symplasmic pathway from mesophyll to sieve elements. Crucial for the driving force is the question where water enters the pre-phloem pathway. Surprisingly, the role of PD in water movement has not been addressed so far appropriately. Modeling of assimilate and water fluxes indicates that in symplasmic...... the concentration gradient or bulk flow along a pressure gradient. The driving force seems to depend on the mode of phloem loading. In a majority of plant species phloem loading is a thermodynamically active process, involving the activity of membrane transporters in the sieve-element companion cell complex. Since...... is currently matter of discussion, called passive symplasmic loading. Based on the limited material available, this review compares the different loading modes and suggests that diffusion is the driving force in apoplasmic loaders, while bulk flow plays an increasing role in plants having a continuous...

  20. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander


    is currently matter of discussion, called passive symplasmic loading. Based on the limited material available, this review compares the different loading modes and suggests that diffusion is the driving force in apoplasmic loaders, while bulk flow plays an increasing role in plants having a continuous...... the concentration gradient or bulk flow along a pressure gradient. The driving force seems to depend on the mode of phloem loading. In a majority of plant species phloem loading is a thermodynamically active process, involving the activity of membrane transporters in the sieve-element companion cell complex. Since...... assimilate movement includes an apoplasmic step, this mode is called apoplasmic loading. Well established is also the polymer-trap loading mode, where the phloem-transport sugars are raffinose-family oligomers in herbaceous plants. Also this mode depends on the investment of energy, here for sugar...

  1. Status of radiation detector and neutron monitor technology

    CERN Document Server

    Kim, Y K; Ha, J H; Han, S H; Hong, S B; Hwang, I K; Lee, W G; Moon, B S; Park, S H; Song, M H


    In this report, we describe the current states of the radiation detection technology, detectors for industrial application, and neutron monitors. We also survey the new technologies being applied to this field. The method to detect radiation is the measurement of the observable secondary effect from the interaction between incident radiation and detector material, such as ionization, excitation, fluorescence, and chemical reaction. The radiation detectors can be categorized into gas detectors, scintillation detectors, and semiconductor detectors according to major effects and main applications. This report contains the current status and operational principles of these detectors. The application fields of radiation detectors are industrial measurement system, in-core neutron monitor, medical radiation diagnostic device, nondestructive inspection device, environmental radiation monitoring, cosmic-ray measurement, security system, fundamental science experiment, and radiation measurement standardization. The st...

  2. DUMAND detector

    CERN Multimedia

    This object is one of the 256 other detectors of the DUMAND (Deep Underwater Muon And Neutrino Detection) experiment. The goal of the experiment was the construction of the first deep ocean high energy neutrino detector, to be placed at 4800 m depth in the Pacific Ocean off Keahole Point on the Big Island of Hawaii. A few years ago, a European conference with Cosmic experiments was organized at CERN as they were projects like DUMAND in Hawaii. Along with the conference, a temporary exhibition was organised as well. It was a collaboration of institutions from Germany, Japan, Switzerland and the U.S.A. CERN had borrowed equipment and objects from different institutes around the world, including this detector of the DUMAND experiment. Most of the equipment were sent back to the institutes, however this detector sphere was offered to a CERN member of the personnel.

  3. MS Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Koppenaal, David W.; Barinaga, Charles J.; Denton, M Bonner B.; Sperline, Roger P.; Hieftje, Gary M.; Schilling, G. D.; Andrade, Francisco J.; Barnes IV., James H.


    Good eyesight is often taken for granted, a situation that everyone appreciates once vision begins to fade with age. New eyeglasses or contact lenses are traditional ways to improve vision, but recent new technology, i.e. LASIK laser eye surgery, provides a new and exciting means for marked vision restoration and improvement. In mass spectrometry, detectors are the 'eyes' of the MS instrument. These 'eyes' have also been taken for granted. New detectors and new technologies are likewise needed to correct, improve, and extend ion detection and hence, our 'chemical vision'. The purpose of this report is to review and assess current MS detector technology and to provide a glimpse towards future detector technologies. It is hoped that the report will also serve to motivate interest, prompt ideas, and inspire new visions for ion detection research.

  4. Vacuum-Ultraviolet Photovoltaic Detector. (United States)

    Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng


    Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

  5. Detectors course

    CERN Multimedia

    CERN. Geneva HR-RFA


    This lecture series on detectors, will give a general, although somewhat compressed, introduction to particle interaction with matter and magnetic fields. Tracking detectors and calorimeters will also be covered as well as particle identification systems. The lectures will start out with a short review of particle interaction with fields and then we will discuss particle detection. At the end some common composite detection systems will be described.

  6. Gain dynamics and saturation in semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher


    Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

  7. Computational design of a robust two-dimensional antiferromagnetic semiconductor (United States)

    Chabungbam, Satyananda; Sen, Prasenjit


    Using density functional theory calculations, we establish the hitherto unknown compound CrCTe3 to be a stable antiferromagnetic semiconductor in the R 3 ¯ crystal structure with an indirect fundamental gap. Successive layers in the bulk compound are weakly bound by van der Waals forces so that individual layers can be easily exfoliated. A monolayer of CrCTe3 is also an antiferromagnetic semiconductor. The monolayer is structurally stable over a large range of compressive and tensile strains, and the antiferromagnetic state is robust over this strain range. Band gap of the monolayer can be tuned by as much as 50% by applying strain in this range.

  8. Capacitor-type micrometeoroid detectors (United States)

    Wortman, J. J.; Griffis, D. P.; Bryan, S. R.; Kinard, W.


    The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

  9. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko


    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  10. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H


    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  11. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro


    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  12. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro


    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  13. Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

    Energy Technology Data Exchange (ETDEWEB)

    Rummel, Stefan


    The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e{sup -} at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e{sup -} using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed

  14. Photoelectrolysis Using Type-II Semiconductor Heterojunctions. (United States)

    Harrison, S; Hayne, M


    The solar-powered production of hydrogen for use as a renewable fuel is highly desirable for the world's future energy infrastructure. However, difficulties in achieving reasonable efficiencies, and thus cost-effectiveness, have hampered significant research progress. Here we propose the use of semiconductor nanostructures to create a type-II heterojunction at the semiconductor-water interface in a photoelectrochemical cell (PEC) and theoretically investigate it as a method of increasing the maximum photovoltage such a cell can generate under illumination, with the aim of increasing the overall cell efficiency. A model for the semiconductor electrode in a PEC is created, which solves the Schrödinger, Poisson and drift-diffusion equations self-consistently. From this, it is determined that ZnO quantum dots on bulk n-InGaN with low In content x is the most desirable system, having electron-accepting and -donating states straddling the oxygen- and hydrogen-production potentials for x < 0.26, though large variance in literature values for certain material parameters means large uncertainties in the model output. Accordingly, results presented here should form the basis for further experimental work, which will in turn provide input to refine and develop the model.

  15. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip


    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  16. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg


    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  17. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R


    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  18. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I


    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  19. Growth of photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yablonovitch, E. (Bell Communications Research, Red Bank, NJ (United States)); Stringfellow, G.B. (Univ. of Utah, Salt Lake City (United States)); Greene, J.E. (Univ. of Illinois, Urbana (United States))


    We assess the opportunities for improving the quality and lowering the cost of thin crystalline semiconductor films for photovoltaics. We find that novel growth and processing methods can lower the cost of crystalline semiconductor films to satisfy the economic conditions for a major expansion of the photovoltaic industry. The research requirements are in the areas of novel precursors for vapor phase growth, atomic layer epitaxy for unprecedented control, and the requirement for novel in situ and ex situ probes to ensure that the new growth methods are producing the utmost in photovoltaic material quality. 42 refs.

  20. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati


    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  1. Tuneable Current Mode RMS Detector (United States)

    Petrović, Predrag B.


    A new realization of RMS detector, employing two CCCIIs (controlled current conveyors), metal-oxide-semiconductor transistors and single grounded capacitor is present in this paper, without any external resistors and components matching requirements. The proposed circuit can be applied in measuring the RMS value of periodic, band-limited signals. The proposed circuit is very appropriate to further develop into integrated circuits. The errors related to the signal processing and errors bound were investigated and provided. To verify the theoretical analysis, the circuit PSpice simulations have also been included, showing good agreement with the theory.

  2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review (United States)

    Casady, J. B.; Johnson, R. W.


    Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm -1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm -2 order of magnitude in 1992 to 3.5 cm -2 at the research level in 1995.

  3. ATLAS Fact Sheet : To raise awareness of the ATLAS detector and collaboration on the LHC

    CERN Multimedia

    ATLAS Outreach


    Facts on the Detector, Calorimeters, Muon System, Inner Detector, Pixel Detector, Semiconductor Tracker, Transition Radiation Tracker,, Surface hall, Cavern, Detector, Magnet system, Solenoid, Toroid, Event rates, Physics processes, Supersymmetric particles, Comparing LHC with Cosmic rays, Heavy ion collisions, Trigger and Data Acquisition TDAQ, Computing, the LHC and the ATLAS collaboration. This fact sheet also contains images of ATLAS and the collaboration as well as a short list of videos on ATLAS available for viewing.

  4. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G


    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  5. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah


    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  6. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M


    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  7. A wide dynamic range square-law diode detector (United States)

    Aparici, Juan


    Semiconductor square-law diode detectors are frequently used in radio astronomy to recover signals immersed in the system noise. Their use is commonly restricted to narrow dynamic ranges of very low signal levels where the square-law is valid. A circuit based on operational amplifiers is proposed that would minimize temperature-drift effects within a dynamic range greater than 30 dB, with an efficiency 600 times greater than the simple high-impedance unbiased detector. Using square-law detector theory, optimum performance is determined for a detector driving source impedance of about 14 percent of the dynamic resistance.

  8. Assessing CZT detector performance for environmental radioactivity investigations. (United States)

    Rahman, Rubina; Plater, A J; Nolan, P J; Appleby, P G


    Cadmium zinc telluride (CdZnTe or CZT) is the leading semiconductor detector for gamma spectroscopy at room temperature. In the present study, a coplanar-grid CZT detector was used for gamma-ray measurements of environmental radioactivity on a contaminated saltmarsh sediment core in comparison with results from a coaxial high-purity germanium detector to assess their comparative performance. The findings reveal that the CZT performs well for both (241)Am and (137)Cs measurements over a broad range of activities, despite limited detector efficiency, and can be used to good effect in the study of environmental radioactivity in contaminated estuarine settings.

  9. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias


    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear......In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... is determined by (but not equal to) the electron momentum relaxation rate. Single cycle pulses of light, irrespective of the frequency range to which they belong, inherently have an ultrabroadband spectrum covering many octaves of frequencies. Unlike the single-cycle pulses in optical domain, the THz pulses can...... be easily sampled with sub-cycle resolution using conventional femtosecond lasers. This makes the THz pulses accessible model tools for direct observation of general nonlinear optical phenomena occurring in the single-cycle regime....

  10. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    11] A detailed review article of defects in semiconductor nanostructures is currently under preparation. [12] V Ranjan and Vijay A Singh, J. Appl. Phys. 89, 6415 (2001). [13] V Ranjan, R K Pandey, Manoj K Harbola and Vijay A Singh, Phys. Rev.


    Energy Technology Data Exchange (ETDEWEB)

    Grant, C D; Zhang, J Z


    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  12. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel


    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  13. ATLAS Inner Detector: Commissioning with Cosmics Data

    CERN Document Server

    The ATLAS collaboration


    The ATLAS experiment at the CERN Large Hadron Collider (LHC) has started taking data last autumn with the inauguration of the LHC. Determination of vertex position and charged particle tracks is performed in the Inner Detector which consists of pixel and microstrip Silicon sensors and transition radiation tubes. In this talk construction and commissioning of these three detectors will be presented. The Pixel Detector is the innermost detector of the ATLAS experiment with approx. 80 million readout channels. After connection of cooling and services and verification of their operation the ATLAS Pixel Detector is now in the final stage of its commissioning phase. Prior to the first beams expected in Autumn 2009, a full characterization of the detector is performed. The SemiConductor Tracker (SCT) is made up from silicon micro-strip detectors processed in the planar p-in-n technology. Sensors are assembled into 4000 modules with 6 million readout channels. The completed SCT detector was operated for many months u...

  14. The color of X-rays: Spectral X-ray computed tomography using energy sensitive pixel detectors

    NARCIS (Netherlands)

    Schioppa, E.J.


    Energy sensitive X-ray imaging detectors are produced by connecting a semiconductor sensor to a spectroscopic pixel readout chip. In this thesis, the applicability of such detectors to X-ray Computed Tomography (CT) is studied. A prototype Medipix based silicon detector is calibrated using X-ray

  15. Evaluation of efficiency of a semiconductor gamma camera

    CERN Document Server

    Otake, H; Takeuchi, Y


    We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

  16. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin


    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  17. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby (United States)

    Devaney, Walter E.


    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  18. Pixel Detectors

    CERN Document Server

    Wermes, Norbert


    Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel technology which can be considered the state of the art in this field of instrumentation. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as the very harsh radiation environment at the LHC without severe compromises in performance. From these developments a number of different applications have spun off, most notably for biomedical imaging. Beyond hybrid pixels, a number of monolithic or semi-monolithic developments, which do not require complicated hybridization but come as single sensor/IC entities, have appeared and are currently developed to greater maturity. Most advanced in terms of maturity are so called CMOS active pixels and DEPFET pixels. The present state in the ...

  19. Germanium blocked impurity band far infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rossington, C.S.


    The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the ''Star Wars'' nuclear defense scheme proposed by the Reagan administration.

  20. Pixel detectors from fundamentals to applications

    CERN Document Server

    Rossi, Leonardo; Rohe, Tilman; Wermes, Norbert


    Pixel detectors are a particularly important class of particle and radiation detection devices. They have an extremely broad spectrum of applications, ranging from high-energy physics to the photo cameras of everyday life. This book is a general purpose introduction into the fundamental principles of pixel detector technology and semiconductor-based hybrid pixel devices. Although these devices were developed for high-energy ionizing particles and radiation beyond visible light, they are finding new applications in many other areas. This book will therefore benefit all scientists and engineers working in any laboratory involved in developing or using particle detection.

  1. Advances in Detector Technology for Infrared Astronomy (United States)

    McCreight, Craig; Cheng, P. L. (Technical Monitor)


    Progress in semiconductor materials and processing technology has allowed the development of infrared detector arrays with unprecedented sensitivity, for imaging and spectroscopic applications in astronomy. The earlier discrete-detector approach has been replaced by large-element (up to 1024 x 1024 pixel), multiplexed devices. Progress has been made against a number of key limiting factors, such as quantum efficiency, noise, spectral response, linearity, and dark current. Future developments will focus on the need for even larger arrays, which operate at higher temperatures.

  2. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system (United States)

    Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.


    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVternary or quaternary III-V semiconductor active layers.

  3. The two sides of silicon detectors

    CERN Document Server

    Devine, S R


    /p/n sup + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the width of the detector, allowing for efficient charge collection. Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage curren...

  4. Biosynthesis of cadmium sulphide quantum semiconductor crystallites (United States)

    Dameron, C. T.; Reese, R. N.; Mehra, R. K.; Kortan, A. R.; Carroll, P. J.; Steigerwald, M. L.; Brus, L. E.; Winge, D. R.


    NANOMETRE-SCALE semiconductor quantum crystallites exhibit size-dependent and discrete excited electronic states which occur at energies higher than the band gap of the corresponding bulk solid1-4. These crystallites are too small to have continuous energy bands, even though a bulk crystal structure is present. The onset of such quantum properties sets a fundamental limit to device miniaturization in microelectronics5. Structures with either one, two or all three dimensions on the nanometer scale are of particular interest in solid state physics6. We report here our discovery of the biosynthesis of quantum crystallites in yeasts Candida glabrata and Schizosaccharomyces pombe, cultured in the presence of cad-mium salts. Short chelating peptides of general structure (γ-Glu-Cys)n-Gly control the nucleation and growth of CdS crystallites to peptide-capped intracellular particles of diameter 20 Å. These quantum CdS crystallites are more monodisperse than CdS par-ticles synthesized chemically. X-ray data indicate that, at this small size, the CdS structure differs from that of bulk CdS and tends towards a six-coordinate rock-salt structure.

  5. Dead layer on silicon p-i-n diode charged-particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Wall, B. L.; Amsbaugh, John F.; Beglarian, A.; Bergmann, T.; Bichsel, H. C.; Bodine, L. I.; Boyd, N. M.; Burritt, Tom H.; Chaoui, Z.; Corona, T. J.; Doe, Peter J.; Enomoto, S.; Harms, F.; Harper, Gregory; Howe, M. A.; Martin, E. L.; Parno, D. S.; Peterson, David; Petzold, Linda; Renschler, R.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Van Wechel, T. D.; VanDevender, Brent A.; Wustling, S.; Wierman, K. J.; Wilkerson, J. F.


    Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  6. Bulk Laser Material Modification: Towards a Kerfless Laser Wafering Process (United States)

    LeBeau, James

    Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists. The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser. A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable

  7. Microfabricated Bulk Piezoelectric Transformers (United States)

    Barham, Oliver M.

    Piezoelectric voltage transformers (PTs) can be used to transform an input voltage into a different, required output voltage needed in electronic and electro- mechanical systems, among other varied uses. On the macro scale, they have been commercialized in electronics powering consumer laptop liquid crystal displays, and compete with an older, more prevalent technology, inductive electromagnetic volt- age transformers (EMTs). The present work investigates PTs on smaller size scales that are currently in the academic research sphere, with an eye towards applications including micro-robotics and other small-scale electronic and electromechanical sys- tems. PTs and EMTs are compared on the basis of power and energy density, with PTs trending towards higher values of power and energy density, comparatively, indicating their suitability for small-scale systems. Among PT topologies, bulk disc-type PTs, operating in their fundamental radial extension mode, and free-free beam PTs, operating in their fundamental length extensional mode, are good can- didates for microfabrication and are considered here. Analytical modeling based on the Extended Hamilton Method is used to predict device performance and integrate mechanical tethering as a boundary condition. This model differs from previous PT models in that the electric enthalpy is used to derive constituent equations of motion with Hamilton's Method, and therefore this approach is also more generally applica- ble to other piezoelectric systems outside of the present work. Prototype devices are microfabricated using a two mask process consisting of traditional photolithography combined with micropowder blasting, and are tested with various output electri- cal loads. 4mm diameter tethered disc PTs on the order of .002cm. 3 , two orders smaller than the bulk PT literature, had the followingperformance: a prototype with electrode area ratio (input area / output area) = 1 had peak gain of 2.3 (+/- 0.1), efficiency of 33 (+/- 0

  8. Controlling light absorption in charge-separating core/shell semiconductor nanocrystals. (United States)

    Mahadevu, Rekha; Yelameli, Aniruddha R; Panigrahy, Bharati; Pandey, Anshu


    Semiconductor nanocrystals of different formulations have been extensively studied for use in thin-film photovoltaics. Materials used in such devices need to satisfy the stringent requirement of having large absorption cross sections. Hence, type-II semiconductor nanocrystals that are generally considered to be poor light absorbers have largely been ignored. In this article, we show that type-II semiconductor nanocrystals can be tailored to match the light-absorption abilities of other types of nanostructures as well as bulk semiconductors. We synthesize type-II ZnTe/CdS core/shell nanocrystals. This material is found to exhibit a tunable band gap as well as absorption cross sections that are comparable to CdTe. This result has significant implications for thin-film photovoltaics, where the use of type-II nanocrystals instead of pure semiconductors can improve charge separation while also providing a much needed handle to regulate device composition.

  9. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro


    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  10. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert


    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  11. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui


    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  12. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz


    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  13. Infrared Semiconductor Metamaterials (United States)


    AFRL-AFOSR-VA-TR-2016-0310 Infrared Semiconductor Metamaterials Jon Schuller UNIVERSITY OF CALIFORNIA SANTA BARBARA 3227 CHEADLE HL SANTA BARBARA, CA...S) AND ADDRESS(ES) University of California , Santa Barbara Office of Research, 3227 Cheadle Hall Santa Barbara, CA 93106-2050 8. PERFORMING...Using Heterojunction Resonators. Advanced Optical Materials, available online (2016). New discoveries, inventions, or patent disclosures: Do you have

  14. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN


    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  15. Hole crystallization in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bonitz, M [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Filinov, V S [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Fortov, V E [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Levashov, P R [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Fehske, H [Institut fuer Physik, Universitaet Greifswald, l7487 Greifswald (Germany)


    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  16. Hole crystallization in semiconductors


    Bonitz, M.; Filinov, V. S.; Fortov, V. E.; Levashov, P. R.; Fehske, H.


    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  17. Developing bulk exchange spring magnets

    Energy Technology Data Exchange (ETDEWEB)

    Mccall, Scott K.; Kuntz, Joshua D.


    A method of making a bulk exchange spring magnet by providing a magnetically soft material, providing a hard magnetic material, and producing a composite of said magnetically soft material and said hard magnetic material to make the bulk exchange spring magnet. The step of producing a composite of magnetically soft material and hard magnetic material is accomplished by electrophoretic deposition of the magnetically soft material and the hard magnetic material to make the bulk exchange spring magnet.

  18. Neutron detector (United States)

    Stephan, Andrew C [Knoxville, TN; Jardret,; Vincent, D [Powell, TN


    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  19. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W


    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  20. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz (United States)

    Moustakas, Theodore D.; Paiella, Roberto


    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz. (United States)

    Moustakas, Theodore D; Paiella, Roberto


    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  2. Bolometric detectors: optimization for differential radiometers. (United States)

    Glezer, E N; Lange, A E; Wilbanks, T M


    A differential radiometer can be constructed by placing two matched bolometric detectors in an ac bridge, thus producing a signal that is proportional to the difference in power incident on the two detectors. In conditions of large and time-varying common-mode radiative load, the common-mode response resulting from imperfectly matched detectors can limit the stability of the difference signal. For semiconductor thermistor bolometers we find that the bridge can always be trimmed to null the common-mode response for a given instantaneous value of the radiative load. However, subsequent changes in the commonmode radiative load change the operating point of the detectors, giving rise to a second-order common-mode response. This response can be minimized by increasing the electrical-power dissipation in the detectors at the cost of sensitivity. For the case that we are analyzing, and for mismatches in detector parameters that are typical of randomly paired detectors, common-mode rejection ratios in excess of 10(3) can be achieved under 20% changes in radiative load.

  3. Semiconductor Detector Developments for High Energy Space Astronomy


    Meuris, Aline


    The rise of high energy astrophysics and solar physics in the 20th century is linked to the development of space telescopes; since the 1960s they have given access to the X-ray and gamma-ray sky, revealing the most violent phenomena in the Universe. Research and developments in imaging concepts and sensing materials haven't stopped since yet to improve the sensitivity of the X-ray and gamma-ray observatories. The paper proposes an overview of instrument realizations and focuses on the innovat...

  4. Uncooled detector development at Raytheon (United States)

    Black, S. H.; Sessler, T.; Gordon, E.; Kraft, R.; Kocian, T.; Lamb, M.; Williams, R.; Yang, T.


    At the 2010 meeting of the Defense and Security Symposia Raytheon reported on the status of their efforts to establish a high rate uncooled detector manufacturing capability. At that time we had just finished the transition of the 640 × 480, 25 μm product to our 200 mm wafer fab line at Freescale semiconductor and established an automated packaging and test capability. Over the past year we have continued to build on that foundation. In this paper we will report on this year's progress in completing the transition of our 25 μm product line to Freescale semiconductor. Included will be the 320 × 240 product transition and a summary of SPC and defectivity data from one year's production. Looking beyond 25 μm, we are well along in our transition of the 17 μm product line to Freescale, with test results being available for the 640 × 480. Additionally, we will report on progress / status of the Tailwind program, which is developing a 2048 × 1536, 17 μm uncooled sensor. Data to be reported includes the establishment of subfield stitching at a high rate commercial fab and the development of the detector package and electronics. With 17 μm transitioned to production, Raytheon has started work on the HD LWIR program, which is laying the foundation for the next generation of uncooled detectors by further shrinking the pixel to <17 μm. With the HD LWIR program just beginning, we will review our development strategy and program plan.

  5. Exploring the electron density localization in single MoS2 monolayers by means of a localize-electrons detector and the quantum theory of atoms in molecules (United States)

    Aray, Yosslen


    The nature of the electron density localization in a MoS2 monolayer under 0 % to 11% tensile strain has been systematically studied by means of a localized electron detector function and the Quantum Theory of atoms in molecules. At 10% tensile strain, this monolayer become metallic. It was found that for less than 6.5% of applied stress, the same atomic structure of the equilibrium geometry (0% strain) is maintained; while over 6.5% strain induces a transformation to a structure where the sulfur atoms placed on the top and bottom layer form S2 groups. The localized electron detector function shows the presence of zones of highly electron delocalization extending throughout the Mo central layer. For less than 10% tensile strain, these zones comprise the BCPs and the remainder CPs in separates regions of the space; while for the structures beyond 10% strain, all the critical points are involved in a region of highly delocalized electrons that extends throughout the material. This dissimilar electron localization pattern is like to that previously reported for semiconductors such as Ge bulk and metallic systems such as transition metals bulk.

  6. Electrodes for Semiconductor Gas Sensors (United States)

    Lee, Sung Pil


    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  7. Method of passivating semiconductor surfaces (United States)

    Wanlass, M.W.


    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  8. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    . The increasing demand for communication bandwidth has made the study of ultrafast processes in SOAs an important one. The ultimate limits to the speed of nonlinear optical signal processing can only be reached by proper materials design and engineering. We have seen that the active region in SOAs has gradually...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...... and specifications. We have measured ultrafast gain and index dynamics of SOAs in pump-and-probe experiments applying 100 fs pulses and a heterodyne detection scheme, where both amplitude and phase of the probe pulses are determined. The gain depletion, and associated index change, and the subsequent recovery afte...

  9. Electron states in semiconductor quantum dots. (United States)

    Dhayal, Suman S; Ramaniah, Lavanya M; Ruda, Harry E; Nair, Selvakumar V


    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  10. Semiconductor Sensors for a Wide Temperature Range

    Directory of Open Access Journals (Sweden)

    Nikolay GORBACHUK


    Full Text Available Prototype sensors are described that are applicable for pressure, position, temperature, and field measurements in the temperature range of 4.2 to 300 K. The strain gauges utilize the silicon substrate and thin film technology. The tensosensitivity of strain sensors is 40 µV/mln-1 or better depending on metrological characteristics of semiconductor films, orientation, and current. The temperature sensors (thermistors make use of the germanium powder bulk. The temperature coefficient of resistance is within 50-100 % /K at 4.2 K. The magnetic field sensors use GaAs films that offer weak temperature dependence of parameters at high sensitivity (up to 300-400 mV/T.

  11. Photoelectron spectroscopy bulk and surface electronic structures

    CERN Document Server

    Suga, Shigemasa


    Photoelectron spectroscopy is now becoming more and more required to investigate electronic structures of various solid materials in the bulk, on surfaces as well as at buried interfaces. The energy resolution was much improved in the last decade down to 1 meV in the low photon energy region. Now this technique is available from a few eV up to 10 keV by use of lasers, electron cyclotron resonance lamps in addition to synchrotron radiation and X-ray tubes. High resolution angle resolved photoelectron spectroscopy (ARPES) is now widely applied to band mapping of materials. It attracts a wide attention from both fundamental science and material engineering. Studies of the dynamics of excited states are feasible by time of flight spectroscopy with fully utilizing the pulse structures of synchrotron radiation as well as lasers including the free electron lasers (FEL). Spin resolved studies also made dramatic progress by using higher efficiency spin detectors and two dimensional spin detectors. Polarization depend...

  12. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I


    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  13. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang


    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  14. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M


    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  15. Gallium nitride nanoparticles for solar-blind detectors

    Indian Academy of Sciences (India)


    materials had been the realization of blue light emitting diodes and lasers, the technological advances that resulted have renewed the interest and led to significant progress in UV detectors.1. Apart from the advances in wide band gap semiconductors where the fabrication process involves high temperature epitaxial growth ...

  16. Development of a Si/CdTe Semiconductor Compton Telescope

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, T.


    We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9{sup o} and 5.7{sup o} at 122 keV and 356 keV, respectively.

  17. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion (United States)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo


    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  18. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)


    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  19. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)


    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  20. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B


    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  1. Radiation effects in bulk silicon (United States)

    Claeys, Cor; Vanhellemont, Jan


    This paper highlights important aspects related to irradiation effects in bulk silicon. Some basic principles related to the interaction of radiation with material, i.e. ionization and atomic displacement, are briefly reviewed. A physical understanding of radiation effects strongly depends on the availability of appropriate analytical tools. These tools are critically accessed from a silicon bulk viewpoint. More detailed information, related to the properties of the bulk damage and some dedicated application aspects, is given for both electron and proton irradiations. Emphasis is placed on radiation environments encountered during space missions and on their influence on the electrical performance of devices such as memories and image sensors.

  2. The development and performance of silicon strip modules for the ATLAS forward semi-conductor tracker

    CERN Document Server

    Peeters, S J M


    The ATLAS experiment at CERN forms a big challenge in detector development, due to its size and expected data rate provided by the Large Hadron Collider, which is expected to be operational in 2007. The Semi-Conductor Tracker will use silicon strip sensors and is one of the three inner tracking detectors foreseen for the ATLAS experiment, which will be enclosed in a 2 T solenoid magnetic field. Its main goal is to provide four precision measurements of each charged particle's track. This paper focuses on the silicon strip detector modules used in the forward direction of the experiment, which are about to go into production. The two endcap detector systems that will be constructed will consist of approximately 13 m **2 sensor surface with over 3 million channels in about 2000 detector modules. This paper describes the design of the detector modules and shows the results on their performance.

  3. Alignment strategy for the Inner Detector of ATLAS

    CERN Document Server

    Bruckman de Renstrom, P


    ATLAS is a general purpose spectrometer in preparation to take data on the Large Hadron Collider at CERN. It will start its operation in autumn 2007. Charged particle tracking is realized by the Inner Detector. ID consists of two silicon subsystems: Pixel Detector and Semiconductor Tracker complemented by straw proportional gas chambers. In order to exploit the excellent intrinsic resolution of the precision tracking devices a high accuracy alignment is required. In this report the strategy to align sub-detectors of the ATLAS ID is reviewed together with the current status of preparation. Both track-based and hardware alignment methods are presented.

  4. Alignment Strategy for the Inner Detector of ATLAS

    CERN Document Server

    Bruckman de Renstrom, P


    ATLAS is a general purpose spectrometer in preparation to take data on the Large Hadron Collider at CERN. It will start its operation in autumn 2007. Charged particle tracking is realized by the Inner Detector. ID consists of two silicon subsystems: Pixel Detector and Semiconductor Tracker complemented by straw proportional gas chambers. In order to exploit the excellent intrinsic resolution of the precision tracking devices a high accuracy alignment is required. In this report the strategy to align sub-detectors of the ATLAS ID is reviewed together with the current status of preparation. Both track-based and hardware alignment methods are presented

  5. Organic Scintillator Detector Response Simulations with DRiFT

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, Madison Theresa [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Bates, Cameron Russell [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mckigney, Edward Allen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Rising, Michael Evan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pinilla, Maria Isabel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Solomon, Jr., Clell Jeffrey [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Sood, Avneet [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    Accurate detector modeling is a requirement to design systems in many non-proliferation scenarios; by determining a Detector’s Response Function (DRF) to incident radiation, it is possible characterize measurements of unknown sources. DRiFT is intended to post-process MCNP® output and create realistic detector spectra. Capabilities currently under development include the simulation of semiconductor, gas, and (as is discussed in this work) scintillator detector physics. Energy spectra and pulse shape discrimination (PSD) trends for incident photon and neutron radiation have been reproduced by DRiFT.

  6. II-VI semiconductor compounds

    CERN Document Server


    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  7. Variable temperature semiconductor film deposition (United States)

    Li, X.; Sheldon, P.


    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  8. Process for producing chalcogenide semiconductors (United States)

    Noufi, R.; Chen, Y.W.


    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  9. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre


    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  10. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst


    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  11. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.


    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  12. Thermopile Detector Arrays for Space Science Applications (United States)

    Foote, M. C.; Kenyon, M.; Krueger, T. R.; McCann, T. A.; Chacon, R.; Jones, E. W.; Dickie, M. R.; Schofield, J. T.; McCleese, D. J.; Gaalema, S.


    Thermopile detectors are widely used in uncooled applications where small numbers of detectors are required, particularly in low-cost commercial applications or applications requiring accurate radiometry. Arrays of thermopile detectors, however, have not been developed to the extent of uncooled bolometer and pyroelectric/ferroelectric arrays. Efforts at JPL seek to remedy this deficiency by developing high performance thin-film thermopile detectors in both linear and two-dimensional formats. The linear thermopile arrays are produced by bulk micromachining and wire bonded to separate CMOS readout electronic chips. Such arrays are currently being fabricated for the Mars Climate Sounder instrument, scheduled for launch in 2005. Progress is also described towards realizing a two-dimensional thermopile array built over CMOS readout circuitry in the substrate.

  13. Characteristics of the ATLAS and CMS detectors

    CERN Document Server

    Seiden, Abraham


    The goal for the detection of new physics processes in particle collisions at Large Hadron Collider energies, combined with the broad spectrum of possibilities for how the physics might be manifest, leads to detectors of unprecedented scope and size for particle physics experiments at colliders. The resulting two detectors, ATLAS (A Toroidal LHC ApparatuS) and CMS (compact muon spectrometer), must search for the new physics processes within very complex events arising from the very high-energy collisions. The two experiments share many basic design features—in particular, the need for very selective triggering to weed out the bulk of the uninteresting events; the order in which detector types are arrayed in order to provide maximum information about each event; and the very large angular coverage required to constrain the energy carried by any non-interacting particles. However, within these basic constraints, the detectors are quite different given the different emphases placed on issues such as resolution...

  14. Development of fountain detectors for spectroscopy of secondary electron in SEM

    Energy Technology Data Exchange (ETDEWEB)

    Agemura, Toshihide [University of Tsukuba (Japan); Iwai, Hideo [National Institute for Materials Science, Tsukuba (Japan); Sekiguchi, Takashi [University of Tsukuba (Japan); National Institute for Materials Science, Tsukuba (Japan)


    To image the variation of surface potential in semiconductors, energy selective secondary electron detector, named fountain detector (FD), was developed. Two types of grids, planar and spherical, were designed and the superiority of latter was demonstrated. The p-n junction of 4H-SiC was observed using spherical FD and the image was much clear than that using conventional detector. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I


    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  16. Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

    CERN Document Server

    Luke, P N; Lee Jae Sik; Yaver, H


    A three-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.

  17. Radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Taleyarkhan, Rusi P.


    Alpha particle detecting devices are disclosed that have a chamber that can hold a fluid in a tensioned metastable state. The chamber is tuned with a suitable fluid and tension such that alpha emitting materials such as radon and one or more of its decay products can be detected. The devices can be portable and can be placed in areas, such as rooms in dwellings or laboratories and used to measure radon in these areas, in situ and in real time. The disclosed detectors can detect radon at and below 4 pCi/L in air; also, at and below 4,000 pCi/L or 300 pCi/L in water.

  18. Silicon Bulk Micromachined Vibratory Gyroscope (United States)

    Tang, T. K.; Gutierrez, R. C.; Wilcox, J. Z.; Stell, C.; Vorperian, V.; Calvet, R.; Li, W. J.; Charkaborty, I.; Bartman, R.; Kaiser, W. J.


    This paper reports on design, modeling, fabrication, and characterization of a novel silicon bulk micromachined vibratory rate gyroscope designed for microspacecraft applications. The new microgyroscope consists of a silicon four leaf cloverstructure with a post attached to the center.

  19. Integrating magneto-optical garnet isolators on semiconductor substrates (United States)

    Sung, Sang-Yeob

    semiconductor integrated laser diode, fully integrated optical isolator and other integrated optical components such as modulators, amplifiers, detectors, and switches.

  20. Proceedings of BulkTrans '89

    Energy Technology Data Exchange (ETDEWEB)


    Papers were presented on bulk commodity demand; steel industry bulk trades; grains and the world food economy; steam coal and cement demand; shipping profitability; bulk carrier design and economics; bulk ports and terminals; ship unloading; computers in bulk terminals; and conveyors and stockyard equipment.

  1. Amorphous Semiconductors: From Photocatalyst to Computer Memory (United States)

    Sundararajan, Mayur

    Amorphous semiconductors are useful in many applications like solar cells, thin film displays, sensors, electrophotography, etc. The dissertation contains four projects. In the first three projects, semiconductor glasses which are a subset of amorphous semiconductors were studied. The last project is about exploring the strengths and constraints of two analysis programs which calculate the particle size information from experimental Small Angle X-ray Scattering data. By definition, glasses have a random atomic arrangement with no order beyond the nearest neighbor, but strangely there exists an Intermediate Range Order (IRO). The origin of IRO is still not clearly understood, but various models have been proposed. The signature of IRO is the First Sharp Diffraction Peak(FSDP) observed in x-ray and neutron scattering data. The FSDP of TiO 2 SiO2 glass photocatalyst with different Ti:Si ratio from SAXS data was measured to test the theoretical models. The experimental results along with its computer simulation results strongly supported one of two leading models. It was also found that the effect of doping IRO on TiO2 SiO2 is severe in mesoporous form than the bulk form. Glass semiconductors in mesoporous form are very useful photocatalysts due to their large specific surface area. Solar energy conversion of photocatalysts greatly depends on their bandgap, but very few photocatalysts have the optical bandgap covering the whole visible region of solar spectrum leading to poor efficiency. A physical method was developed to manipulate the bandgap of mesoporous photocatalysts, by using the anisotropic thermal expansion and stressed glass network properties of mesoporous glasses. The anisotropic thermal expansion was established by S/WAXS characterization of mesoporous silica (MCM-41). The residual stress in the glass network of mesoporous glasses was already known for an earlier work. The new method was initially applied on mesoporous TiPO4, and the results were

  2. Combatting bulking sludge with ultrasound

    Energy Technology Data Exchange (ETDEWEB)

    Wuensch, B.; Heine, W.; Neis, U. [Technische Univ. Hamburg-Harburg, Hamburg (Germany). Dept. of Sanitary and Environmental Engineering


    Bulking and floating sludge cause great problems in many waste water treatment plants with biological nutrient removal. The purification as well as the sludge digestion process can be affected. These problems are due to the interlaced structure of filamentous microorganisms, which have an impact on the sludge's settling behaviour. Foam is able to build up a stable layer, which does not settle in the secondary clarifier. Foam in digestion causes a reduction of the degree of stabilisation and of the biogas production. We use low-frequency ultrasound to combat filamentous organisms in bulking sludge. Low-frequency ultrasound is suitable to create high local shear stresses, which are capable of breaking the filamentous structures of the sludge. After preliminary lab-scale tests now a full-scale new ultrasound equipment is operating at Reinfeld sewage treatment plant, Germany. The objective of this study is to explore the best ultrasound configuration to destroy the filamentous structure of bulking and foaming sludge in a substainable way. Later this study will also look into the effects of ultrasound treated bulking sludge on the anaerobic digestion process. Up to now results show that the settling behaviour of bulking sludge is improved. The minimal ultrasound energy input for destruction of bulking structure was determined. (orig.)

  3. RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

    CERN Document Server

    Balbuena, Juan Pablo; Campabadal, Francesca; Díez, Sergio; Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Rafí, Joan Marc; Ullán, Miguel; Creanza, Donato; De Palma, Mauro; Fedele, Francesca; Manna, Norman; Kierstead, Jim; Li, Zheng; Buda, Manuela; Lazanu, Sorina; Pintilie, Lucian; Pintilie, Ioana; Popa, Andreia-Ioana; Lazanu, Ionel; Collins, Paula; Fahrer, Manuel; Glaser, Maurice; Joram, Christian; Kaska, Katharina; La Rosa, Alessandro; Mekki, Julien; Moll, Michael; Pacifico, Nicola; Pernegger, Heinz; Goessling, Claus; Klingenberg, Reiner; Weber, Jens; Wunstorf, Renate; Roeder, Ralf; Stolze, Dieter; Uebersee, Hartmut; Cihangir, Selcuk; Kwan, Simon; Spiegel, Leonard; Tan, Ping; Bruzzi, Mara; Focardi, Ettore; Menichelli, David; Scaringella, Monica; Breindl, Michael; Eckert, Simon; Köhler, Michael; Kuehn, Susanne; Parzefall, Ulrich; Wiik, Liv; Bates, Richard; Blue, Andrew; Buttar, Craig; Doherty, Freddie; Eklund, Lars; Bates, Alison G; Haddad, Lina; Houston, Sarah; James, Grant; Mathieson, Keith; Melone, J; OShea, Val; Parkes, Chris; Pennicard, David; Buhmann, Peter; Eckstein, Doris; Fretwurst, Eckhart; Hönniger, Frank; Khomenkov, Vladimir; Klanner, Robert; Lindström, Gunnar; Pein, Uwe; Srivastava, Ajay; Härkönen, Jaakko; Lassila-Perini, Katri; Luukka, Panja; Mäenpää, Teppo; Tuominen, Eija; Tuovinen, Esa; Eremin, Vladimir; Ilyashenko, Igor; Ivanov, Alexandr; Kalinina, Evgenia; Lebedev, Alexander; Strokan, Nikita; Verbitskaya, Elena; Barcz, Adam; Brzozowski, Andrzej; Kaminski, Pawel; Kozlowski, Roman; Kozubal, Michal; Luczynski, Zygmunt; Pawlowski, Marius; Surma, Barbara; Zelazko, Jaroslaw; de Boer, Wim; Dierlamm, Alexander; Frey, Martin; Hartmann, Frank; Zhukov, Valery; Barabash, L; Dolgolenko, A; Groza, A; Karpenko, A; Khivrich, V; Lastovetsky, V; Litovchenko, P; Polivtsev, L; Campbell, Duncan; Chilingarov, Alexandre; Fox, Harald; Hughes, Gareth; Jones, Brian Keith; Sloan, Terence; Samadashvili, Nino; Tuuva, Tuure; Affolder, Anthony; Allport, Phillip; Bowcock, Themis; Casse, Gianluigi; Vossebeld, Joost; Cindro, Vladimir; Dolenc, Irena; Kramberger, Gregor; Mandic, Igor; Mikuž, Marko; Zavrtanik, Marko; Zontar, Dejan; Gil, Eduardo Cortina; Grégoire, Ghislain; Lemaitre, Vincent; Militaru, Otilia; Piotrzkowski, Krzysztof; Kazuchits, Nikolai; Makarenko, Leonid; Charron, Sébastien; Genest, Marie-Helene; Houdayer, Alain; Lebel, Celine; Leroy, Claude; Aleev, Andrey; Golubev, Alexander; Grigoriev, Eugene; Karpov, Aleksey; Martemianov, Alxander; Rogozhkin, Sergey; Zaluzhny, Alexandre; Andricek, Ladislav; Beimforde, Michael; Macchiolo, Anna; Moser, Hans-Günther; Nisius, Richard; Richter, Rainer; Gorelov, Igor; Hoeferkamp, Martin; Metcalfe, Jessica; Seidel, Sally; Toms, Konstantin; Hartjes, Fred; Koffeman, Els; van der Graaf, Harry; Visschers, Jan; Kuznetsov, Andrej; Sundnes Løvlie, Lars; Monakhov, Edouard; Svensson, Bengt G; Bisello, Dario; Candelori, Andrea; Litovchenko, Alexei; Pantano, Devis; Rando, Riccardo; Bilei, Gian Mario; Passeri, Daniele; Petasecca, Marco; Pignatel, Giorgio Umberto; Bernardini, Jacopo; Borrello, Laura; Dutta, Suchandra; Fiori, Francesco; Messineo, Alberto; Bohm, Jan; Mikestikova, Marcela; Popule, Jiri; Sicho, Petr; Tomasek, Michal; Vrba, Vaclav; Broz, Jan; Dolezal, Zdenek; Kodys, Peter; Tsvetkov, Alexej; Wilhelm, Ivan; Chren, Dominik; Horazdovsky, Tomas; Kohout, Zdenek; Pospisil, Stanislav; Solar, Michael; Sopko, Vít; Sopko, Bruno; Uher, Josef; Horisberger, Roland; Radicci, Valeria; Rohe, Tilman; Bolla, Gino; Bortoletto, Daniela; Giolo, Kim; Miyamoto, Jun; Rott, Carsten; Roy, Amitava; Shipsey, Ian; Son, SeungHee; Demina, Regina; Korjenevski, Sergey; Grillo, Alexander; Sadrozinski, Hartmut; Schumm, Bruce; Seiden, Abraham; Spence, Ned; Hansen, Thor-Erik; Artuso, Marina; Borgia, Alessandra; Lefeuvre, Gwenaelle; Guskov, J; Marunko, Sergey; Ruzin, Arie; Tylchin, Tamir; Boscardin, Maurizio; Dalla Betta, Gian - Franco; Gregori, Paolo; Piemonte, Claudio; Ronchin, Sabina; Zen, Mario; Zorzi, Nicola; Garcia, Carmen; Lacasta, Carlos; Marco, Ricardo; Marti i Garcia, Salvador; Minano, Mercedes; Soldevila-Serrano, Urmila; Gaubas, Eugenijus; Kadys, Arunas; Kazukauskas, Vaidotas; Sakalauskas, Stanislavas; Storasta, Jurgis; Vidmantis Vaitkus, Juozas; CERN. Geneva. The LHC experiments Committee; LHCC


    The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration.

  4. 350 keV accelerator based PGNAA setup to detect nitrogen in bulk samples

    Energy Technology Data Exchange (ETDEWEB)

    Naqvi, A.A., E-mail: [Department of Physics and King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Al-Matouq, Faris A.; Khiari, F.Z.; Gondal, M.A.; Rehman, Khateeb-ur [Department of Physics and King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Isab, A.A. [Department of Chemistry, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Raashid, M.; Dastageer, M.A. [Department of Physics and King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia)


    Nitrogen concentration was measured in explosive and narcotics proxy material, e.g. anthranilic acid, caffeine, melamine, and urea samples, bulk samples through thermal neutron capture reaction using 350 keV accelerator based prompt gamma ray neutron activation (PGNAA) setup. Intensity of 2.52, 3.53–3.68, 4.51, 5.27–5.30 and 10.38 MeV prompt gamma rays of nitrogen from the bulk samples was measured using a cylindrical 100 mm×100 mm (diameter×height ) BGO detector. Inspite of interference of nitrogen gamma rays from bulk samples with capture prompt gamma rays from BGO detector material, an excellent agreement between the experimental and calculated yields of nitrogen gamma rays has been obtained. This is an indication of the excellent performance of the PGNAA setup for detection of nitrogen in bulk samples.

  5. The ATLAS Semiconductor tracker: operations and performance

    CERN Document Server

    Pani, P; The ATLAS collaboration


    Tracker After more than 3 years of successful operation at the LHC, we report on the operation and performance of the Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment. The SCT is part of the ATLAS experiment at CERN and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals are processed in the front-end ABCD3TA ASICs, which use a binary readout architecture. Data is transferred to the off-detector readout electronics via optical fibers. We find 99.3% of the SCT modules are operational, noise occupancy and hit efficiency exceed the design specifications; the alignment is very cl...

  6. Optical investigations of nanostructured oxides and semiconductors (United States)

    Irvin, Patrick Richard

    This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

  7. CLIC Detector Power Requirements

    CERN Document Server

    Gaddi, A


    An estimate for the CLIC detector power requirements is outlined starting from the available data on power consumptions of the four LHC experiments and considering the differences between a typical LHC Detector (CMS) and the CLIC baseline detector concept. In particular the impact of the power pulsing scheme for the CLIC Detector electronics on the overall detector consumption is considered. The document will be updated with the requirements of the sub-detector electronics once they are more defined.

  8. Photocatalysis Using Semiconductor Nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Thurston, T.R.; Wilcoxon,J.P.


    We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

  9. Semiconductor optoelectronic infrared spectroscopy

    CERN Document Server

    Hollingworth, A R


    level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore this technique has been shown that the inhomogeneous broadening of the photoluminescence spectrum is not purely affected by just size and composition. We suggest that other processes such as state occupancy, In roughing, and exciton binding energies may account for the extra energy. We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their futu...

  10. Semiconductor adiabatic qubits

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib


    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  11. Traditional Semiconductors in the Two-Dimensional Limit (United States)

    Lucking, Michael C.; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S. B.


    Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

  12. Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering (United States)



    Semiconductor nanocrystals are tiny light-emitting particles on the nanometer scale. Researchers have studied these particles intensely and have developed them for broad applications in solar energy conversion, optoelectronic devices, molecular and cellular imaging, and ultrasensitive detection. A major feature of semiconductor nanocrystals is the quantum confinement effect, which leads to spatial enclosure of the electronic charge carriers within the nanocrystal. Because of this effect, researchers can use the size and shape of these “artificial atoms” to widely and precisely tune the energy of discrete electronic energy states and optical transitions. As a result, researchers can tune the light emission from these particles throughout the ultraviolet, visible, near-infrared, and mid-infrared spectral ranges. These particles also span the transition between small molecules and bulk crystals, instilling novel optical properties such as carrier multiplication, single-particle blinking, and spectral diffusion. In addition, semiconductor nanocrystals provide a versatile building block for developing complex nanostructures such as superlattices and multimodal agents for molecular imaging and targeted therapy. In this Account, we discuss recent advances in the understanding of the atomic structure and optical properties of semiconductor nanocrystals. We also discuss new strategies for band gap and electronic wave function engineering to control the location of charge carriers. New methodologies such as alloying, doping, strain-tuning, and band-edge warping will likely play key roles in the further development of these particles for optoelectronic and biomedical applications. PMID:19827808

  13. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    found that the bulk etching rate is 3.2 µm/h at 60°C in 2.5 N NaOH of water solution. It is also found that the track density in detectors exposed to soil samples increases linearly with the removed layer. Keywords. Bulk etching rate; LR-115-II; sensitivity. PACS Nos 29.40.Rg; 29.90.+r; 29.40.Wk; 29.40.Gx. 1. Introduction.

  14. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of ...

  15. Vertex detectors: The state of the art and future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Damerell, C.J.S. [Rutherford Appleton Laboratory, Didcot (United Kingdom)


    We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the physics and technology of semiconductor devices, emphasizing the areas of most relevance for detectors. The main design options (microstrips and pixel devices, both CCD`s and APS`s) are discussed, as well as the issue of radiation damage, which probably implies the need to change to detector media beyond silicon for some vertexing applications. Finally, the evolution of key performance parameters over the past 15 years is reviewed, and an attempt is made to extrapolate to the likely performance of detectors working at the energy frontier ten years from now.

  16. Detector electronics for experiments at the large hadron collider (United States)

    Nikityuk, N. M.; Samoylov, V. N.


    The state of the art of a tracking detector and calorimeter electronics that are being developed for experiments at the Large Hadron Collider (LHC) is discussed. Construction of the detectors is briefly described. The problems of fabrication of integrated circuits based on a radiation-resistant technology are considered, as well as the solution to the problem of microconnections between sensitive elements and readout amplifiers in two-coordinate semiconductor detectors. The parameters and block diagrams of both analog and digital integrated circuits are given; these circuits are used for amplifying and shaping the signals measured by tracking detectors of elementary particles and calorimeters. The contributions of Russian experimenters and physicists of the Joint Institute for Nuclear Research to the development of detector electronics for experiments at the LHC is described.

  17. Modelling of bulk superconductor magnetization (United States)

    Ainslie, M. D.; Fujishiro, H.


    This paper presents a topical review of the current state of the art in modelling the magnetization of bulk superconductors, including both (RE)BCO (where RE = rare earth or Y) and MgB2 materials. Such modelling is a powerful tool to understand the physical mechanisms of their magnetization, to assist in interpretation of experimental results, and to predict the performance of practical bulk superconductor-based devices, which is particularly important as many superconducting applications head towards the commercialization stage of their development in the coming years. In addition to the analytical and numerical techniques currently used by researchers for modelling such materials, the commonly used practical techniques to magnetize bulk superconductors are summarized with a particular focus on pulsed field magnetization (PFM), which is promising as a compact, mobile and relatively inexpensive magnetizing technique. A number of numerical models developed to analyse the issues related to PFM and optimise the technique are described in detail, including understanding the dynamics of the magnetic flux penetration and the influence of material inhomogeneities, thermal properties, pulse duration, magnitude and shape, and the shape of the magnetization coil(s). The effect of externally applied magnetic fields in different configurations on the attenuation of the trapped field is also discussed. A number of novel and hybrid bulk superconductor structures are described, including improved thermal conductivity structures and ferromagnet-superconductor structures, which have been designed to overcome some of the issues related to bulk superconductors and their magnetization and enhance the intrinsic properties of bulk superconductors acting as trapped field magnets. Finally, the use of hollow bulk cylinders/tubes for shielding is analysed.

  18. Electric field distribution in irradiated silicon detectors

    CERN Document Server

    Castaldini, A; Polenta, L; Nava, F; Canali, C


    Particle irradiation causes dramatic changes in bulk properties of p sup + -n-n sup + silicon structures operating as particle detectors. Several attempts to model and justify such variations have been proposed in the last few years. The main unsolved problem remains in the determination of the electric field and depletion layer distributions as key-parameters to estimate the collection efficiency of the detector. By using optical beam induced current (OBIC) and surface potential (SP) measurements we determined the behavior of the electric field and confirmed the existence of a double-junction structure appearing after irradiation.

  19. Electric field distribution in irradiated silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Castaldini, A.; Cavallini, A. E-mail:; Polenta, L.; Nava, F.; Canali, C


    Particle irradiation causes dramatic changes in bulk properties of p{sup +}-n-n{sup +} silicon structures operating as particle detectors. Several attempts to model and justify such variations have been proposed in the last few years. The main unsolved problem remains in the determination of the electric field and depletion layer distributions as key-parameters to estimate the collection efficiency of the detector. By using optical beam induced current (OBIC) and surface potential (SP) measurements we determined the behavior of the electric field and confirmed the existence of a double-junction structure appearing after irradiation.

  20. Organic / IV, III-V semiconductor hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ong, P.-L. [Emitech, Inc., Fall River, Massachusetts, 02720 (United States); Levitsky, I. A. [Emitech, Inc., Fall River, Massachusetts, 02720 (United States); Department of Chemistry, University of Rhode Island, Kingston, Rhode Island, 02881 (United States)


    We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V), nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI) nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type) deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type) forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines), conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented. (author)

  1. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong


    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  2. Coherent control of electrical currents in semiconductor nanowires/-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Betz, Markus [Experimentelle Physik 2, Technische Universitaet Dortmund, Dortmund (Germany); Ruppert, Claudia [Physik-Department E11, Technische Universitaet Muenchen, Garching (Germany); Thunich, Sebastian [Experimentelle Physik 2, Technische Universitaet Dortmund, Dortmund (Germany); Physik-Department E11, Technische Universitaet Muenchen, Garching (Germany); Newson, Ryan; Menard, Jean-Michel; Sames, Christian; Van Driel, Henry M. [Department of Physics and Institute for Optical Sciences, University of Toronto, Toronto, ON (Canada); Abstreiter, Gerhard; Holleitner, Alexander W. [Walter Schottky-Institut and Physik-Department E24, Technische Universitaet Muenchen, Garching (Germany); Fontcuberta i Morral, Anna [Laboratoire des Materiaux Semiconducteurs, Institut des Materiaux, EPFL Lausanne (Switzerland)


    Quantum interference control of electrical currents is well established in bulk semiconductors. It arises from the interference of one- and two-photon absorption pathways. Here, the concept is transferred to one-dimensional semiconductor nanostructures. First, currents are optically injected into aligned single-walled carbon nanotube ensembles by phase-related 700 and 1400 nm, 150 fs pulses. These transient currents are detected via the emitted THz radiation. In a second set of experiments, a phase-stable superposition of {proportional_to}100 fs pulses from a compact erbium-doped fiber source and their second harmonic is shown to induce ultrashort {proportional_to}{mu}A current bursts in single unbiased GaAs nanowires. The current flow is characterized by charge accumulation and the related potential difference between the contacted ends of the {proportional_to}10 {mu}m long wires. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat


    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  4. Application of Maximum Entropy Method to Semiconductor Engineering

    Directory of Open Access Journals (Sweden)

    Yoshiki Yonamoto


    Full Text Available The maximum entropy method (MEM is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thin film fabrication, it is essential to thoroughly understand atomic-scale structures, internal fixed charges, and bulk/interface traps, and many experimental techniques have been developed for evaluating these. However, the difficulty in interpreting the data they provide prevents the improvement of device fabrication processes. As a candidate for a very practical data analyzing technique, MEM is a promising approach to solve this problem. In this paper, we review the application of MEM to thin films used in semiconductor engineering. The method provides interesting and important information that cannot be obtained with conventional methods. This paper explains its theoretical background, important points for practical use, and application results.

  5. Strain sensitivity of band gaps of Sn-containing semiconductors

    DEFF Research Database (Denmark)

    Li, Hong; Castelli, Ivano Eligio; Thygesen, Kristian Sommer


    Tuning of band gaps of semiconductors is a way to optimize materials for applications within photovoltaics or as photocatalysts. One way to achieve this is through applying strain to the materials. We investigate the effect of strain on a range of Sn-containing semiconductors using density...... functional theory and many-body perturbation theory calculations. We find that the band gaps of bulk Sn oxides with SnO6 octahedra are highly sensitive to volumetric strain. By applying a small isotropic strain of 2% (-2%), a decrease (increase) of band gaps as large as 0.8 to 1.0 eV are obtained. We...... attribute the ultrahigh strain sensitivity to the pure Sn s-state character of the conduction-band edges. Other Sn-containing compounds may show both increasing and decreasing gaps under tensile strain and we show that the behavior can be understood by analyzing the role of the Sn s states in both...

  6. Semiconductor-superconductor optoelectronic devices (United States)

    Bouscher, Shlomi; Panna, Dmitry; Hayat, Alex


    Devices combining superconductors with semiconductors offer a wide range of applications, particularly in the growing field of quantum information processing. This is due to their ability to take advantage of both the extensive knowledge gathered in the field of semiconductors and the unique quantum properties of superconductors. This results in novel device concepts, such as structures generating and detecting entangled photon pairs as well as novel optical gain and laser realizations. In this review, we discuss the fundamental concepts and the underlying physical phenomena of superconductor-semiconductor optoelectronics as well as practical device implementations.

  7. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul


    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.


    CERN Multimedia

    F. Gasparini

    DT As announced in the previous Bulletin MU DT completed the installation of the vertical chambers of barrel wheels 0, +1 and +2. 242 DT and RPC stations are now installed in the negative barrel wheels. The missing 8 (4 in YB-1 and 4 in YB-2) chambers can be installed only after the lowering of the two wheels into the UX cavern, which is planned for the last quarter of the year. Cabling on the surface of the negative wheels was finished in May after some difficulties with RPC cables. The next step was to begin the final commissioning of the wheels with the final trigger and readout electronics. Priority was giv¬en to YB0 in order to check everything before the chambers were covered by cables and services of the inner detectors. Commissioning is not easy since it requires both activity on the central and positive wheels underground, as well as on the negative wheels still on the surface. The DT community is requested to commission the negative wheels on surface to cope with a possible lack of time a...

  9. One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

    Directory of Open Access Journals (Sweden)

    Shen Guozhen


    Full Text Available Abstract The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

  10. One-Dimensional Nanostructures and Devices of II-V Group Semiconductors. (United States)

    Shen, Guozhen; Chen, Di


    The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn(3)P(2) nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

  11. The Optical Links of the ATLAS SemiConductor Tracker

    CERN Document Server

    Abdesselam, A; Apsimon, R; Band, C; Barr, C; Batchelor, L; Bates, R; Bell, P; Bernabeu, J; Bizzell, J; Brenner, R; Brodbeck, T; Bruckman De Renstrom, P; Buttar, C; Carter, J; Charlton, D; Cheplakov, A; Chilingarov, A; Chu, M-L; Colijn, A-P; Dawson, I; Demirkõz, B; de Jong, P; Dervan, P; Dolezal, Z; Dowell, J; Escobar, P; Spencer, E; Ekelöf, T J C; Eklund, L; Ferrere, D; Fraser, T; French, M; French, R; Fuster, J; Gallop, B; García, C; Goodrick, M; Greenall, A; Grillo, A; Grosse-Knetter, J; Hartjes, F; Hessey, N; Hill, J C; Homer, J; Hou, L; Hughes, G; Ikegami, Y; Issever, C; Jackson, J; Jones, M; Jones, T J; Jovanovic, P; Koffeman, E; Kodys, P; Kohriki, T; Lee, S-C; Lester, C; Limper, M; Lindsay, S W; Lozano, M; Macwaters, C; Magrath, C; Mahout, G; Mandic, I; Matheson, J; McMahon, T; Mikulec, B; Muijs, A; Morrissey, M; Nichols, A; Nickerson, R; O'Shea, V; Pagenis, S; Parker, M; Pater, J; Perrin, E; Pernegger, H; Peeters, S; Phillips, P; Postranecky, M; Robinson, D; Robson, A; Rudge, A; Sandaker, H; Sedlak, K; Smith, N A; Stapnes, S; Stugu, B; Teng, P K; Terada, S; Tricoli, A; Tyndel, M; Ujiie, N; Ullán, M; Unno, Y; van der Kraaij, E; Van Vulpen, I; Viehhauser, G; Vossebeld, J H; Warren, M; Wastie, R; Weidberg, A; Wells, P; White, D; Wilson, J


    Optical links are used for the readout of the 4088 silicon microstrip modules that make up the SemiConductor Tracker of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The optical link requirements are reviewed, with particular emphasis on the very demanding environment at the LHC. The on-detector components have to operate in high radiation levels for 10 years, with no maintenance, and there are very strict requirements on power consumption, material and space. A novel concept for the packaging of the on-detector optoelectronics has been developed to meet these requirements. The system architecture, including its redundancy features, is explained and the critical on-detector components are described. The results of the extensive Quality Assurance performed during all steps of the assembly are discussed. Optical links are used for the readout of the 4088 silicon microstrip modules that make up the SemiConductor Tracker of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The optical ...

  12. Type II superlattice technology for LWIR detectors (United States)

    Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.


    SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

  13. Evaluation of the EDGE detector in small-field dosimetry (United States)

    Shin, Hun-Joo; Kim, Myong-Ho; Choi, Ihl-Bohng; Kang, Young-nam; Kim, Dae-Hyun; Chio, Byung Ock; Jang, Hong Seok; Jung, Ji-Young; Son, Seok Hyun; Kay, Chul Seung


    This study evaluates a new diode detector design for small-field dosimetry. An accurate detector that has a small volume are necessary to compile data for stereotactic radiosurgery (SRS), stereotactic body radiotherapy (SBRT), and intensity-modulated radiotherapy (IMRT). Two semiconductor diode detectors and one ionization chamber were used to measure the profiles, percent depth doses (PDDs), and relative output factors (OFs) of a Novalis 6-MV SRS beam. Profiles and PDD data were collected using 5.0-, 10.0-, 15.0-, 20.0-, 30.0-, and 50.0-mm micro multileaf collimators (mMLCs) at small fields and a 98.0 × 98.0-mm2 reference field. OFs were collected for each of the mMLCs. The EDGE diode detector, the diode detector, and the ion chamber (0.007 cc) were used in the study. Detector measurements were performed using the 3D water phantom with a source-to-surface distance of 100-cm at a depth of 1.5-cm. The measurements were analyzed using the IBA OmniPro Accept 7th version software. In addition, all data were compared to Monte Carlo simulations. The semiconductor diodes had similar OFs and PDDs for each of the mMLCs used. The Dmax values of the EDGE diode detector, measured from the PDD, ranged from 8.5 to 14.0-mm with an average of 12.4-mm. The field widths of the EDGE diode detector were found to have similar values. The performance of the EDGE diode detector was comparable for all small-field measurements. Additionally, no evidence of an energy response was observed for the EDGE detectors for a field of 98 × 98-mm2. This is particularly important when measuring the relative OF for small fields or gathering larger-sized field data for the commissioning of a treatment planning system.

  14. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo


    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  15. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications (United States)

    Zhang, Liping; Jaroniec, Mietek


    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  16. Detector simulation needs for detector designers

    Energy Technology Data Exchange (ETDEWEB)

    Hanson, G.G.


    Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers.

  17. A 77 K MOS magnetic field detector

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, R S; Torres, A. [Instituto Nacional de Astrofisica Optica y Electronica, Puebla (Mexico); Garcia, P.J. [Universidad Veracruzana, Veracruz (Mexico); Gutierrez, E.A. [Motorola, Puebla (Mexico)


    An integrated MOS (metal-oxide-semiconductor)-compatible magnetic field detector (split-drain MAGFET) for operation at liquid-nitrogen temperature LNT (77 K) is presented. The measured relative magnetic sensibility (S{sub a}) is approximately 14%/T (double the value ever reported) using a non-optimized MAGFET structure (W/L) = (100 mm/125 mm). The cryo-magnetic structure was tested without a built-in preamplifier. It presents a power consumption of the order of mW. [Spanish] A traves de este articulo se presenta un detector de campo magnetico (split-drain MAGFET), basado en el transistor de efecto de campo MOS (metal-oxido-semiconductor), y totalmente compatible con procesos de fabricacion de circuitos integrados CMOS. La operacion optima de este detector es a temperaturas criogenicas. Aqui se presentan los resultados experimentales de la caracterizacion de una estructura no optimizada con dimensiones (W / L) = (100 mm/125 mm) a la temperatura del nitrogeno liquido (77 K). La sensibilidad relativa medida es de cerca del 14 % T, casi el doble del valor maximo antes reportado en la literatura. El dispositivo se midio sin un pre-amplificador integrado, mostrando un consumo de potencia del orden de microwatts.

  18. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong


    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  19. Physics of semiconductor laser devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, G.H.B.


    Aspects of laser design and development are considered along with semiconductor materials for lasers, problems of device fabrication, crystal growth, the degradation of lasers, and the integration of semiconductor lasers with other optical components. A description is presented of light emission processes and laser action in semiconductors, taking into account electronic radiative transitions, the relation between emission and absorption processes, transition probabilities, the density of electron states in the highly doped semiconductor, carrier recombination and spontaneous emission, the gain/current relation, light-current characteristics, optical modes, and the evolution of mode spectrum and intensity with current. Attention is given to laser heterostructures and the properties of heterojunctions, optical waveguides, the performance of heterostructure lasers, stripe geometry lasers, and the dynamic response of lasers. Lasers with distributed feedback and Bragg reflectors are also discussed.

  20. Energy transfer with semiconductor nanocrystals

    NARCIS (Netherlands)

    Rogach, A.L.; Klar, T.A.; Lupton, J.M.; Meijerink, A.; Feldmann, J.


    Fo¨ rster (or fluorescence) resonant energy transfer (FRET) is a powerful spectroscopic technique to study interactions, conformational and distance changes, in hybrid nanosystems. Semiconductor nanocrystals, also known as colloidal quantum dots, are highly efficient fluorophores with a strong

  1. Ballistic superconductivity in semiconductor nanowires

    NARCIS (Netherlands)

    Zhang, H.; Gül, Ö.; Conesa-Boj, S.; Nowak, M.P.; Wimmer, M.; Zuo, K.; Mourik, V.; Vries, F.K. de; Veen, J. van; Moor, M.W.A. de; Bommer, J.D.S.; Woerkom, D.J. van; Car, D.; Plissard, S.R.; Bakkers, E.P.A.M.; Quintero Pérez, M.; Cassidy, M.C.; Koelling, S.; Goswami, S.; Watanabe, K.; Taniguchi, T.; Kouwenhoven, L.P.


    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of

  2. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank


    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  3. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  4. Semiconductor packaging materials interaction and reliability

    CERN Document Server

    Chen, Andrea


    In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how

  5. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail:


    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  6. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam


    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  7. Nonlinear Optical Interactions in Semiconductors. (United States)


    Physique du Solide et Energie Solaire We had on-going interaction with Dr. Christian Verie on the growth of high quality narrow-gap semiconductor crystals...The band gap energy of the semiconductor decreases with increasing temperature. Consequently, the absorption of light in the energy region of the...gas and, more importantly, will modulate the electron energy at the difference frequency, wI - 02" Under ordinary circumstances such an energy (or

  8. Alternative high-k dielectrics for semiconductor applications


    Van Elshocht, S.; Adelmann, C.; Clima, S.; Pourtois, G.; Conard, T.; Delabie, A.; Franquet, A.; Lehnen, P.; Meersschaut, J.; Menou, N.; Popovici, M.; Richard, O.; Schram, T.; Wang, X. P.; HARDY, An


    Although the next generation high-k gate dielectrics has been defined for the 45 nm complementary metal oxide semiconductor technology node, threshold voltage control and equivalent oxide thickness (EOT) scaling remain concerns for future devices. Therefore, the authors explored the effect of incorporating dysprosium in the gate stack. Results suggest that improved EOT-leakage scaling is possible by adding Dy to the interfacial SiO2 layer in a 1:1 ratio or by adding 10% Dy to bulk HfO2. The d...

  9. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.


    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  10. Development, prototyping and characterization of double sided silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Topkar, Anita, E-mail:; Singh, Arvind; Aggarwal, Bharti; Kumar, Amit; Kumar, Arvind; Murali Krishna, L.V.; Das, D.


    Double sided DC-coupled silicon strip detectors with geometry of 65 mm×65 mm have been developed in India for nuclear physics experiments. The detectors have 64 P{sup +} strips on the front side and 64 N{sup +} strips on the backside with a pitch of 0.9 mm. These detectors were fabricated using a twelve mask layer process involving double sided wafer processing technology. Semiconductor process and device simulations were carried out in order to theoretically estimate the impact of important design and process parameters on the breakdown voltage of detectors. The performance of the first lot of prototype detectors has been studied using static characterization tests and using an alpha source. The characterization results demonstrate that the detectors have low leakage currents and good uniformity over the detector area of about 40 cm{sup 2}. Overview of the detector design, fabrication process, simulation results and initial characterization results of the detectors are presented in this paper.

  11. EDITORIAL: Oxide semiconductors (United States)

    Kawasaki, M.; Makino, T.


    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  12. Methods of measurement for semiconductor materials, process control, and devices (United States)

    Bullis, W. M. (Editor)


    Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

  13. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja


    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise...

  14. Bulk fields with brane terms

    Energy Technology Data Exchange (ETDEWEB)

    Aguila, F. del [Departamento de Fisica Teorica y del Cosmos and Centro Andaluz de Fisica de Particulas Elementales (CAFPE), Universidad de Granada, E-18071 Granada (Spain); Perez-Victoria, M. [Dipartimento di Fisica ' ' G. Galilei' ' , Universita di Padova and INFN, Sezione di Padova, Via Marzolo 8, I-35131 Padua (Italy); Santiago, J. [Institute for Particle Physics Phenomenology, University of Durham, South Road, Durham DH1 3LE (United Kingdom)


    In theories with branes, bulk fields get in general divergent corrections localized on these defects. Hence, the corresponding brane terms are renormalized and should be included in the effective theory from the very beginning. We review the phenomenology associated to brane kinetic terms for different spins and backgrounds, and point out that renormalization is required already at the classical level. (orig.)

  15. Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

    DEFF Research Database (Denmark)

    Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.


    -gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...... of phase-pure hematite nanoparticles, we find that there is no evidence for size-driven change in the band gap of hematite nanoparticles down to around 8 nm....

  16. Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

    Energy Technology Data Exchange (ETDEWEB)

    Bhosale, J. S. [Intel Corporation, Hillsboro, Oregon 97124 (United States); Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Moore, J. E.; Wang, X.; Bermel, P.; Lundstrom, M. S. [Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)


    Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique can also provide a contactless way to measure the external quantum efficiency of a solar cell.

  17. Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shengbai [Rensselaer Polytechnic Inst., Troy, NY (United States); Gray, Nancy Ryan [Gordon Research Conferences, West Kingston, RI (United States)


    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

  18. Recent Progress on 3D Silicon Detectors

    CERN Document Server

    Lange, Jörn


    3D silicon detectors, in which the electrodes penetrate the sensor bulk perpendicular to the surface, have recently undergone a rapid development from R\\&D over industrialisation to their first installation in a real high-energy-physics experiment. Since June 2015, the ATLAS Insertable B-Layer is taking first collision data with 3D pixel detectors. At the same time, preparations are advancing to install 3D pixel detectors in forward trackers such as the ATLAS Forward Proton detector or the CMS-TOTEM Proton Precision Spectrometer. For those experiments, the main requirements are a slim edge and the ability to cope with non-uniform irradiation. Both have been shown to be fulfilled by 3D pixel detectors. For the High-Luminosity LHC pixel upgrades of the major experiments, 3D detectors are promising candidates for the innermost pixel layers to cope with harsh radiation environments up to fluences of $2\\times10^{16}$\\,n$_{eq}$/cm$^2$ thanks to their excellent radiation hardness at low operational voltages and ...

  19. Wide-Bandgap Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, M.S.


    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  20. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji


    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  1. High resolution imaging detectors and applications

    CERN Document Server

    Saha, Swapan K


    Interferometric observations need snapshots of very high time resolution of the order of (i) frame integration of about 100 Hz or (ii) photon-recording rates of several megahertz (MHz). Detectors play a key role in astronomical observations, and since the explanation of the photoelectric effect by Albert Einstein, the technology has evolved rather fast. The present-day technology has made it possible to develop large-format complementary metal oxide–semiconductor (CMOS) and charge-coupled device (CCD) array mosaics, orthogonal transfer CCDs, electron-multiplication CCDs, electron-avalanche photodiode arrays, and quantum-well infrared (IR) photon detectors. The requirements to develop artifact-free photon shot noise-limited images are higher sensitivity and quantum efficiency, reduced noise that includes dark current, read-out and amplifier noise, smaller point-spread functions, and higher spectral bandwidth. This book aims to address such systems, technologies and design, evaluation and calibration, control...

  2. Signal processors for position-sensitive detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, Ken-ichi [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering


    Position-sensitive detectors (PSD) are widely used in following various fields: condensed matter studies, material engineering, medical radiology particle physics, astrophysics and industrial applications. X-ray diffraction analysis is one of the field where PSDs are the most important instruments. In this field, many types of PSAs are employed: position-sensitive proportional counters (PSPC), multi-wire proportional chambers (MWPC), imaging plates, image intensifiers combined CCD cameras and semiconductor array devices. Two readout systems used for PSDs, where one is a charge-division type with high stability and the other is an encoder with multiple delay, line readout circuits useful for fast counting, were reported in this paper. The multiple delay line encoding system can be applicable to high counting rate 1D and 2D gas proportional detectors. (G.K.)

  3. From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tomas, C. de; Lopeandia, A. F.; Alvarez, F. X., E-mail: [Department of Physics, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Cantarero, A. [Materials Science Institute, University of Valencia, P. O. Box 22085, 46071 Valencia (Spain)


    We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro, and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems.

  4. A wide dynamic range square-law diode detector [for radioastronomy (United States)

    Aparici, J.


    Semiconductor square-law diode detectors are frequently used in radio astronomy to recover signals immersed in the system noise. Their use is commonly restricted to narrow dynamic ranges of very low signal levels where the square-law is valid. A circuit based on operational amplifiers is proposed that would minimize temperature-drift effects within a dynamic range greater than 30 dB, with an efficiency 600 timer greater than the simple high-impedance unbiased detector. Using square-law detector theory, optimum performance is determined for a detector driving source impedance of about 14% of the dynamic resistance.

  5. Application of CdTe (CdZnTe) detectors for radioactive waste characterization

    CERN Document Server

    Dovbnya, N A; Kutny, V E


    The radiation detectors based on wide-zone semiconductor CdTe (CdZnTe) monocrystals have promising advantages for their application in investigation (characterization) of radioactive waste. Among these advantages there are the wide range of photons flux and energy, high registration efficiency and satisfactory energy resolution without deep cooling of the detector. This report discusses the obtained data concerning radiation stability of detectors, influence of different conditions (filters, collimators, registration channel fill etc.) on their energy resolution in spectrometric regime, as well as a dependence of radionuclide identification accuracy on detector size.

  6. Design and Production of Detector Modules for the LHCb Silicon Tracker

    CERN Document Server

    Agari, M; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Pugatch, V; Bay, A; Bettler, MO; Fauland, P; Frei, R; Van Hunen, J; Knecht, M; Nicolas, L; Perrin, A; Schneider, O; Tran, MT; Vervink, K; Adeva, B; Esperante-Pereira, D; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernhard, RP; Bernet, P; Gassner, J; Lehner, F; Needham, M; Sakhelashvili, T M; Steiner, S; Steinkamp, O; Straumann, U; Van Tilburg, J; Vollhardt, A; Volyanskyy, D; Wenger, A


    The LHCb Silicon Tracker will cover a sensitive surface of about 12 m^2 with silicon micro-strip detectors. The production of detector modules is currently coming close to its conclusion. In this paper, the design of the detector modules, the main module production steps, and the module quality assurance programme are described. Selected results from the quality assurance are shown and first lessons are drawn from the experience gained during module production. Presented at the 6th International ``Hiroshima'' Symposium on the Development and Application of Semiconductor Tracking Detectors, Carmel, California, September 11-15, 2006; proceedings submitted for publication in Nucl. Instr. and Meth.~A

  7. GADRAS Detector Response Function.

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Dean J.; Harding, Lee; Thoreson, Gregory G; Horne, Steven M.


    The Gamma Detector Response and Analysis Software (GADRAS) applies a Detector Response Function (DRF) to compute the output of gamma-ray and neutron detectors when they are exposed to radiation sources. The DRF is fundamental to the ability to perform forward calculations (i.e., computation of the response of a detector to a known source), as well as the ability to analyze spectra to deduce the types and quantities of radioactive material to which the detectors are exposed. This document describes how gamma-ray spectra are computed and the significance of response function parameters that define characteristics of particular detectors.

  8. Study of kinetic models for nonlinear electron transport in semiconductor superlattices


    Álvaro Ballesteros, Mariano


    Las superredes de semiconductores son cristales unidimensionales artificiales formados por muchos períodos, cada uno de ellos compuesto por dos semiconductores diferentes pero con constantes similares, por ejemplo GaAs y AlAs. Estas nanoestructuras fueron inventadas por Esaki y Tsu con el propósito de desarrollar dispositivos en los que pudieran ser observadas las oscilaciones de Bloch. Tienen aplicaciones prácticas como osciladores de alta frecuencia, láseres de cascada cuántica o detectores...

  9. Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function. (United States)

    Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S


    Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

  10. Materials Development for Boron Phosphide Based Neutron Detectors: Final Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Edgar, James Howard [Kansas State Univ., Manhattan, KS (United States)


    The project goal was to improve the quality of boron phosphide (BP) by optimizing its epitaxial growth on single crystal substrates and by producing bulk BP single crystals with low dislocation densities. BP is potentially a good semiconductor for high efficiency solid state neutron detectors by combining neutron capture and charge creation within the same volume. The project strategy was to use newly available single crystal substrates, silicon carbide and aluminum nitride, engineered to produce the best film properties. Substrate variables included the SiC polytype, crystallographic planes, misorientation of the substrate surface (tilt direction and magnitude) from the major crystallographic plane, and surface polarity (Si and C). The best films were (111)BP on silicon-face (0001) 4H-SiC misoriented 4° in the [1-100] direction, and BP on (100) and (111) 3C-SiC/Si; these substrates resulted in films that were free of in-plane twin defects, as determined by x-ray topography. The impact of the deposition temperature was also assessed: increasing the temperature from 1000 °C to 1200 °C produced films that were more ordered and more uniform, and the size of individual grains increased by more than a factor of twenty. The BP films were free of other compounds such as icosahedral boron phosphide (B12P2) over the entire temperature range, as established by Raman spectroscopy. The roughness of the BP films was reduced by increasing the phosphine to diborane ratio from 50 to 200. Bulk crystals were grown by reacting boron dissolved in nickel with phosphorus vapor to precipitate BP. Crystals with dimensions up to 2 mm were produced.

  11. Alignment of the ATLAS Inner Detector tracking system

    CERN Document Server

    Wang, J; The ATLAS collaboration


    The ATLAS Inner Detector (ID) consists of two silicon subsystems, the Pixel detector and the Semiconductor Tracker (SCT), complemented by the Transition Radiation Tracker (TRT) composed of drift tubes. After the assembly of the detector, the position of the individual modules is known with much worse accuracy than their intrinsic resolution. Therefore a track-based alignment procedure has to be applied. The baseline goal is to determine the position and orientation of the modules with such precision that the track parameters’ determination is not worsened by more than 20% with respect to that expected from the perfectly aligned detector. This is crucial for efficient track reconstruction and precise momentum measurement and vertex reconstruction. The alignment of the ID requires the determination of its almost 36,000 degrees of freedom(DoF) with high accuracy. Thus the demanded precision for the alignment of the silicon sensors is below 10 micrometer.The implementation of the track based alignment with the ...

  12. Drift Chambers detectors; Detectores de deriva

    Energy Technology Data Exchange (ETDEWEB)

    Duran, I.; Martinez laso, L.


    We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs.

  13. Physics of semiconductor laser devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, G.H.B.


    The physics of the semiconductor laser is studied. The basic phenomena that control the operation of the device are analyzed and described in considerable detail. The treatment has been keyed particularly to fundamental concepts and kept general in order to avoid being overtaken by events. The range of phenomena in a semiconductor laser involves a number of scientific disciplines. To cater for the reader who is not already a specialist in all of these the author has endeavoured, in the chapters on fundamental behaviour, to provide in a readable form the minimum background that is needed to understand the more specialist part of the text. As an introduction a general review is given of the whole range of semiconductor laser devices that now exist, the technology involved in their fabrication, the factors that determine their reliability, and their possible role in integrated systems.

  14. Thiophene-Based Organic Semiconductors. (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan


    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  15. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz


    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  16. Bulk plasmon-polaritons in hyperbolic nanorod metamaterial waveguides (United States)

    Vasilantonakis, Nikolaos; Nasir, Mazhar E; Dickson, Wayne; Wurtz, Gregory A; Zayats, Anatoly V


    Hyperbolic metamaterials comprised of an array of plasmonic nanorods provide a unique platform for designing optical sensors and integrating nonlinear and active nanophotonic functionalities. In this work, the waveguiding properties and mode structure of planar anisotropic metamaterial waveguides are characterized experimentally and theoretically. While ordinary modes are the typical guided modes of the highly anisotropic waveguides, extraordinary modes, below the effective plasma frequency, exist in a hyperbolic metamaterial slab in the form of bulk plasmon-polaritons, in analogy to planar-cavity exciton-polaritons in semiconductors. They may have very low or negative group velocity with high effective refractive indices (up to 10) and have an unusual cut-off from the high-frequency side, providing deep-subwavelength (λ0/6–λ0/8 waveguide thickness) single-mode guiding. These properties, dictated by the hyperbolic anisotropy of the metamaterial, may be tuned by altering the geometrical parameters of the nanorod composite. PMID:26693254

  17. Surface Sum Frequency Generation of III-V Semiconductors (United States)

    Zhang, Zhenyu; Kim, Jisun; Khoury, Rami; Plummer, E. W.; Haber, Louis


    Optical sum frequency generation (SFG) is a well-established technique for surface and interface studies but its use has been limited mainly to centrosymmetric materials so far. Here, we demonstrate that femtosecond broadband SFG spectroscopy has the ability to identify surface molecular vibrations on the archetypical non-centrosymmetric semiconductor GaAs (001), in which the bulk SFG signal typically dominates over surface SFG contributions. Azimuthal angle dependence of the second order SFG nonlinear response from GaAs (001) surface in the reflection geometry in vacuum for all eight polarization combinations are detected and analyzed. The results agree with and extend upon previous second harmonic generation (SHG) studies and phenomenological analysis. In addition, carbon monoxide and methanol are employed as molecular-markers on the GaAs (001) surfaces. The C-O stretching mode of carbon monoxide and the methyl group stretching modes of methanol are clearly observed even though the bulk contribution dominates the SFG signal. Coherent heterodyne interference is proposed as the mechanism for the surface signal enhancement. Two other zinc blende type III-V semiconductors, GaP and GaSb, are also studied and compared. Funded by EFRC.

  18. Plasma-produced nanocrystals enable new insights in semiconductor physics (United States)

    Greenberg, Benjamin; Robinson, Zachary; Gorynski, Claudia; Voigt, Bryan; Francis, Lorraine; Aydil, Eray; Kortshagen, Uwe


    The transition from semiconducting (insulating) to metallic behavior is a central problem of semiconductor physics. In bulk semiconductors, this insulator-to-metal transition is described by the well-known Mott criterion. However, in films of semiconductor nanocrystals the Mott criterion fails completely. Recent progress in the nonthermal plasma synthesis of films of highly doped silicon nanocrystals has contributed to the development of a new theory that presents a consistent analog to the Mott criterion for nanocrystal materials. Here, we study films of nonthermal plasma produced zinc oxide (ZnO) nanocrystals to in detail investigate the insulator-to-metal transition. We produce high-purity monodisperse ZnO nanocrystals in a nonthermal plasma and form dense films via supersonic impact deposition. We then modulate the free carrier density, n, and nanocrystal contact facet radius, ρ, via xenon-flashlamp intense pulsed light annealing, which induces necking between the clean surfaces of adjacent nanocrystals. Preliminary electrical measurements indicate that the electron mobility can be finely tuned and that the films cross the insulator-to-metal transition for sufficiently high n and ρ. This work was supported by the MRSEC program of the U.S. National Science Foundation under grant DMR-1420013.

  19. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions (United States)

    Ning, Cun-Zheng; Dou, Letian; Yang, Peidong


    Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors. These materials include traditional II-VI and III-V semiconductors and their alloys, inorganic and hybrid perovskites, and the newly emerging 2D materials. One important common feature of these materials is that their nanoscale dimensions result in a large tolerance to lattice mismatches within a monolithic structure of varying composition or between the substrate and target material, which enables us to achieve almost arbitrary control of the variation of the alloy composition. As a result, the bandgaps of these alloys can be widely tuned without the detrimental defects that are often unavoidable in bulk materials, which have a much more limited tolerance to lattice mismatches. This class of nanomaterials could have a far-reaching impact on a wide range of photonic applications, including tunable lasers, solid-state lighting, artificial photosynthesis and new solar cells.

  20. Thermal kinetic inductance detector (United States)

    Cecil, Thomas; Gades, Lisa; Miceli, Antonio; Quaranta, Orlando


    A microcalorimeter for radiation detection that uses superconducting kinetic inductance resonators as the thermometers. The detector is frequency-multiplexed which enables detector systems with a large number of pixels.