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Sample records for bulk semi-insulating inp

  1. Undoped semi-insulating indium phosphide (InP) and its applications

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    @@ During the past several years, the research and development of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 (m. At present, InP has become an important semiconductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher frequency operation and lower power requirements. Therefore, InPis widely being used for the manufacture of microwave devices, high-frequency devices and optoelectronic integrated circuits (OEICs) which are indispensable for wireless technology, satellite communications[1-3]. Although n-type and p-type InP can meet actual needs, semi-insulating InP substrates remain to be improved due to their poor uniformity and consistency. For this reason, several possible approaches have been reported to the preparation of SI InP by wafer annealing under different conditions[4-9].

  2. Raman investigations on nitrogen ion implantation effects on semi-insulating InP

    CERN Document Server

    Santhakumar, K; Kesavamoorthy, R; Magudapathy, P; Nair, K G M; Ravichandran, V

    2002-01-01

    Raman scattering measurements on liquid-encapsulated Czochralski-grown Fe-doped semi-insulating InP(1 0 0) single crystal substrates have been carried out before and after 120 keV N sup + implantation for various doses from 10 sup 1 sup 3 to 10 sup 1 sup 5 cm sup - sup 2 and also after post-implantation rapid thermal annealing of these samples. It is observed that LO phonon mode frequency decreases and full width at half maximum (FWHM) increases with fluence due to implantation-induced lattice damage. Forbidden Raman TO mode in (1 0 0) cut InP is observed at the doses of 5x10 sup 1 sup 3 and 5x10 sup 1 sup 4 cm sup - sup 2. This might have appeared due to the polycrystalline and/or misoriented regions created during implantation. TO mode is not observed for high doses in as-implanted samples due to excessive lattice damage induced by the implantation. On rapid thermal annealing at 573 K for 30 s, the implanted samples show a partial recovery of LO phonon mode frequency and FWHM due to partial annealing of the...

  3. The effect of nitrogen implantation on structural changes in semi-insulating InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K.; Jayavel, P.; Reddy, G.L.N.; Sastry, V.S.; Nair, K.G.M.; Ravichandran, V. E-mail: vravichandran@vsnl.com

    2003-12-01

    110 keV nitrogen ions (N{sup +}) of fluences 1 x 10{sup 14}-1 x 10{sup 17} cm{sup -2} have been implanted in liquid encapsulated Czochralski grown Fe-doped semi-insulating indium phosphide (InP) single crystal substrates. Grazing incidence X-ray diffraction measurements on as-grown and implanted samples have been carried out and analyzed. At all above fluences, a broad hump in the region of InP(1 1 1) peaks is observed. It might have resulted from implantation-induced misoriented grains along certain preferred orientations. The peak observed at a d-value of 1.77 A for all the fluences becomes more pronounced as the implantation fluence increases up to 1 x 10{sup 16} cm{sup -2}. This could indicate formation of an Indium phosphide nitride alloy. Post-implantation annealing reduces the structural defects and assists in the growth of the nitride phase.

  4. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application

    Science.gov (United States)

    Alexandre, F.; Parillaud, O.; Nguyen, D. C.; Azoulay, R.; Quillec, M.; Bouchoule, S.; Le Mestreallan, G.; Juhel, M.; Le Roux, G.; Rao, E. V. K.

    1998-05-01

    The growth of both undoped and iron doped InP on planar as well as non-planar (0 0 1)InP substrates has been explored using low pressure hydride vapour phase epitaxy (LP-HVPE) in the temperature range of 500-620°C. Secondary ion mass spectroscopy (SIMS), X-ray diffraction and photoluminescence measurements have shown no drastic degradation in the crystal quality with decreasing growth temperature. The Fe incorporation in the layers is found to be independent of the substrate temperature ( Ts) and in all experiments semi-insulating InP : Fe layers with resistivities close to 10 9 Ω cm have been obtained. A perfect growth selectivity with no deposition on masked areas and a good planarized regrowth on mesas has been demonstrated even at low Ts.

  5. Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

    Institute of Scientific and Technical Information of China (English)

    Takayuki; Yamanaka; Hideki; Fukano; Ken; Tsuzuki; Munehisa; Tamura; Ryuzo; Iga; Matsuyuki; Ogasawara; Yasuhiro; Kondo; Tadashi; Saitoh

    2003-01-01

    A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.

  6. Terahertz Radiation from Large Aperture Bulk Semi-insulating GaAs Photoconductive Dipole Antenna

    Institute of Scientific and Technical Information of China (English)

    施卫; 贾婉丽; 侯磊; 许景周; 张希成

    2004-01-01

    We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3mm between two Au/Ge/Ni electrodes, triggered by 800nm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than that of a normal GaAs dipole antenna.

  7. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.

    2004-07-01

    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  8. The effect of bulk traps on the InP (Indium Phosphide) accumulation type MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor)

    Science.gov (United States)

    Meiners, L. G.

    The enclosed reports represent work performed at USCD on Contract N00014-82-K-2032 entitled Surface and Interfacial Properties of InP and provides a full account of the results obtained during the contract period: May 1, 1984 through April 31, 1985. The paper, Space charge-limited currents and trapping in semi-insulating InP, has now been published in Electron. Device Letters, volume EDL-6, page 356 (1985). The manuscript, Effect of bulk traps on the InP accumulation type MISFET, will be presented as an invited talk at the fall meeting in the Journal of the Electrochemical Society.

  9. Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection; Caracterisation de materiaux semi-isolants par spectroscopie de transitoirede courant photoinduit: materiaux INP dopes Fe pour la micro-optoelectronique et CDZNTE pour la detection nucleaire

    Energy Technology Data Exchange (ETDEWEB)

    Cherkaoui, K

    1998-07-01

    The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

  10. InP Bulk Crystals Grown from Various Stoichiometric Melt

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed.

  11. Vanadium-Doped Semi-Insulating 6H-SiC for Microwave Power Device Applications

    Institute of Scientific and Technical Information of China (English)

    Li'na Ning; Zhihong Feng; Yingmin Wang; Kai Zhang; Zhen Feng; Xiangang Xu

    2009-01-01

    Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 Ωcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry (SIMS) was employed to determine the concen-tration of impurities in the crystals, such as B, Al, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity (1×106 Ωcm) in the wafer up to 80%. High-performance AlGaN/GaN high-electron-mobility-transistor (HEMT) materials and devices were grown and fabricated on semi-insulating 6H-SiC sub-strates. The two-dimensional electron gas (2DEG) mobility at room-temperature was 1795 cm2/V·s. The charge carrier concentration of the substrate determined by capacitance-voltage (C-V) test was 7.3 × 1015 cm-3. The device with a gate width of 1 mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.

  12. Modelling of OPNMR phenomena using photon energy-dependent in GaAs and InP

    Science.gov (United States)

    Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

  13. Advanced BCD technology with vertical DMOS based on a semi-insulation structure

    Science.gov (United States)

    Kui, Ma; Xinghua, Fu; Jiexin, Lin; Fashun, Yang

    2016-07-01

    A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated. Project supported by the National Natural Science Foundation of China (No. 61464002), the Science and Technology Fund of Guizhou Province (No. Qian Ke He J Zi [2014]2066), and the Dr. Fund of Guizhou University (No. Gui Da Ren Ji He Zi (2013)20Hao).

  14. Outer space grown semi-insulating GaAs and its applications

    Institute of Scientific and Technical Information of China (English)

    林兰英; 张绵; 钟兴儒; 陈诺夫; Masayoshi; Yamada

    1999-01-01

    GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.

  15. 20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas.

    Science.gov (United States)

    Hale, P J; Madeo, J; Chin, C; Dhillon, S S; Mangeney, J; Tignon, J; Dani, K M

    2014-10-20

    We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data.

  16. Growth of High Quality Semi-Insulating InP Single Crystal by Suppression of Compensation Defects

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

  17. Implementation of Neural Network Method to Investigate Defect Centers in Semi-Insulating Materials

    Science.gov (United States)

    Jankowski, S.; Wierzbowski, M.; Kaminski, P.; Pawlowski, M.

    A neural network (NN) method has been proposed as a new algorithm for extraction of defect centers parameters in semi-insulating materials from experimental data obtained by photoinduced transient spectroscopy (PITS). The new algorithm is applied to investigate irradiation-induced defect centers in high resistive silicon. The folds on the PITS spectral surface formed due to the presence of defect levels are best fitted with a two-dimensional approximation function with implementation of the NN learning process. As a result, the Arrhenius plots for defect centers are obtained and the parameters of these centers are determined.

  18. Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

    Science.gov (United States)

    Richter, E.; Gridneva, E.; Weyers, M.; Tränkle, G.

    2016-12-01

    Fe-doping of GaN layers of 3 in. in diameter and a thickness of 1 mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of growth conditions, a high purity of undoped GaN layers, and a moderate Fe incorporation of 2×1018 cm-3 allow for growth of semi-insulating GaN layers with a sufficiently high specific resistivity even at elevated temperature. This makes the material suitable as substrate for electronic power devices at high power or in harsh ambient.

  19. On the relation between deep level compensation, resistivity and electric field in semi-insulating CdTe:Cl radiation detectors

    Science.gov (United States)

    Cola, Adriano; Farella, Isabella; Pousset, Jeremy; Valletta, Antonio

    2016-12-01

    A compensation model for semi-insulating CdTe:Cl based on a single dominant deep level 0.725 eV above the valence band is proposed. The model is corroborated by experimental evidence: resistivity measurements as a function of temperature on bulk crystals and stationary electric field distributions in Ohmic/Schottky radiation detectors, obtained by the Pockels effect. The latter are in close agreement with the numerical solutions of transport equations when considering the deep centre concentration in the range 2 - 4 × 1012 cm-3, and a compensation ratio R = 2.1, this one being consistent with an original ambipolar analysis of resistivity. More generally, the approach elucidates the role of electrical contacts and deep levels in controlling the electric fields in devices based on compensated materials.

  20. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2002-01-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  1. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Institute of Scientific and Technical Information of China (English)

    Ma Xiangrong; Shi Wei; Ji Weili; Xue Hong

    2011-01-01

    A 4 mm gap semi-insulating(SI)GaAs photoconductive switch(PCSS)was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ.In the experiment,when the bias field was 4 kV,the switch did not induce self-maintained discharge but worked in nonlinear(lock-on)mode.The phenomenon is analyzed as follows:an exciton effect contributes to photoconduction in the generation and dissociation of excitons.Collision ionization,avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed.Under the combined influence of these factors,the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status.The characteristics of the filament affect the degree of damage to the switch.

  2. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Science.gov (United States)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  3. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)

    R Srinivasan; K Ramachandran

    2008-11-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles.

  4. Electrical detection of spin hyperpolarization in InP

    Science.gov (United States)

    Caspers, Christian; Ansermet, Jean-Philippe

    2014-09-01

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ0H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  5. Electrical detection of spin hyperpolarization in InP

    Energy Technology Data Exchange (ETDEWEB)

    Caspers, Christian; Ansermet, Jean-Philippe [Laboratoire de Physique des Matériaux Nanostructurés, École Polytechnique Fédérale de Lausanne EPFL, 1015 Lausanne (Switzerland)

    2014-09-29

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ{sub 0}H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  6. Influence of substrate on the performances of semi-insulating GaAs detectors

    CERN Document Server

    Baldini, R; Nava, F; Canali, C; Lanzieri, C

    2000-01-01

    A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

  7. High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs

    CERN Document Server

    da Silva, S L; de Oliveira, A G; Ribeiro, G M; da Silva, R L

    2014-01-01

    Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structu...

  8. InP solid state detector for measurement of low energy solar neutrinos

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Yoshiyuki, E-mail: fukuda@staff.miyakyo-u.ac.j [Faculty of Education, Miyagi University of Education, 149, Aobaku-aza-aoba, Sendai, Miyagi 980-0845 (Japan); Izawa, Toshiyuki [Solid State Division, Hamamatsu Photonics K.K. 1126-1, Ichino-cho, Hamamatsu, Shizuoka 435-8558 (Japan); Koshio, Yusuke; Moriyama, Shigetaka [Kamioka Observatory, Institute for Cosmic Ray Research, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida, Gifu 506-1205 (Japan); Namba, Toshio [ICEPP, International Center for Elementary Particle Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Shiozawa, Masato [Kamioka Observatory, Institute for Cosmic Ray Research, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida, Gifu 506-1205 (Japan)

    2010-11-01

    A large volume radiation detector using a semi-insulating Indium Phosphide (InP) wafer has been developed for Indium Project on Neutrino Observation for Solar interior (IPNOS) experiment. We have achieved the volume of 20 mm{sup 3}, and this is world largest one among InP detectors which observed {gamma}'s at hundred keV region. In spite of the depletion layer, most of charge generated by electron hole pair production are collected by an induction, and the charge collection efficiency and the energy resolution are obtained by 60% and 25%, respectively. We measured actual backgrounds related to {sup 115}In {beta} decay, and no significant background was found.

  9. Semiclassical three-valley Monte Carlo simulation analysis of steady-state and transient electron transport within bulk InAsxP1-x, InAs and InP

    Directory of Open Access Journals (Sweden)

    Hadi Arabshahi

    2010-04-01

    Full Text Available We have studied how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk zincblende InAsxP1-x, InAs and InP. Calculations are made using a non-parabolic effective-mass energy band model. Monte Carlo simulation includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimised pseudo-potential band calculations to ensure excellent agreement with experimental information and ab-initio band models. The effects of alloy scattering on the electron transport physics are examined. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field-effect transistor. The electron drift velocity relaxes to the saturation value of about 1.5105 ms-1 within 4 pico-seconds for all crystal structures. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

  10. Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures

    Science.gov (United States)

    Manifacier, J. C.

    2010-12-01

    Theoretical and numerical investigations of carriers transport in N-Semi-Insulating (SI)-N and P-SI-P diodes is extended to the case of extrinsic (N type) or SI samples with Gunn like electric field dependent mobilities. The results obtained in a preceding publication [1] are valid as long as the bulk electric field does not increase above a threshold field E th associated with the beginning of negative electron differential mobility values: μ n,diff = ( dv n/ dE) diodes. SI(N -) characterizes a SI layer which keeps, under applied bias, a free electron concentration close to its thermal equilibrium value up to the beginning of electron space charge injection. A systematic study has been made by varying the contact boundary properties: flat band, metallic, N + or P +; the length of the sample and the electric parameters of the deep compensating trap of the SI layers. We show that these steady state numerical instabilities are related to the existence of multiple current-voltage solutions when numerical modelisation is made using the drift-diffusion model.

  11. Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

    Institute of Scientific and Technical Information of China (English)

    CHENG Yuan-Bing; WANG Yang; SUN Yu; PAN Jiao-Qing; BIAN Jing; AN Xin; ZHAO ling-juan; WANG Wei

    2009-01-01

    A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W.A-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.

  12. High Gain Lateral Semi-Insulating GaAs Photoconductive Switch Triggered by 1064 nm Laser Pulses

    Institute of Scientific and Technical Information of China (English)

    施卫; 张显斌; 李琦; 陈二柱; 赵卫

    2002-01-01

    We report on the experimental results of a lateral semi-insulating GaAs photoconductive switch, with a gap of 8mm between two electrodes, triggered by 1064nm laser pulses at a wavelength beyond the GaAs absorption edge. Both the linear and nonlinear modes of the switch were observed when it was triggered by light pulses with an energy of l.9mJ and a pulse width of 60ns, and operated at high voltages of 3 and 5kV. The results show that when the semi-insulating GaAs photoconductive switch operates under an electrical field of 4.37 k V/cm, it will enter into the linear mode first, and then the switch will undergo the nonlinear mode (lock-on) after a delay of about 20 - 100 ns. It is worth noticing that the delay time under high light energy is longer than that in the low optical energy. The non-intrinsic absorption mechanism is discussed. EL2 deep level defects and double-photon absorption in GaAs may play a key part in the absorption process.

  13. Growth of Semi-Insulating GaN by Using Two-Step A1N Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhong-Tang; QUO Li-Wei; XING Zhi-Gang; DING Guo-Jian; ZHANG Jie; PENG Ming-Zeng; JIA Hai-Qiang; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 1013 Ω/sq by using two-step A1N buffer instead of the traditional low-temperature GaN buffer. The high sheet resistance of as-grown GaN over 10 Ωfi/sq is due to inserting an insulating buffer layer (two-step A1N buffer) between the high-temperature GaN layer and a sapphire substrate which blocks diffusion of oxygen and overcomes the weakness of generating high density carrier near interface of GaN and sapphire when a low-temperature GaN buffer is used. The result suggests that the high conductive feature of unintentionally doped GaN is mainly contributed from the highly conductive channel near interface between GaN and the sapphire substrate, which is indirectly manifested by room-temperature photoluminescence excited by an incident laser beam radiating on growth surface and on the substrate. The functions of the two-step A1N buffer layer in reducing screw dislocation and improving crystal quality of GaN are also discussed.

  14. Comparison of semi-insulating InAlAs and InP:Fe for InP-based buried-heterostructure QCLs

    Science.gov (United States)

    Flores, Y. V.; Aleksandrova, A.; Elagin, M.; Kischkat, J.; Kurlov, S. S.; Monastyrskyi, G.; Hellemann, J.; Golovynskyi, S. L.; Dacenko, O. I.; Kondratenko, S. V.; Tarasov, G. G.; Semtsiv, M. P.; Masselink, W. T.

    2015-09-01

    In a previous work [Flores et al., J. Cryst. Growth 398 (2014) 40] [3] we demonstrated the advantages of using a thin InAlAs spacer layer in the fabrication of buried-heterostructure quantum-cascade lasers (QCLs), as it improves the morphology of the interface between the laser core and the InP:Fe lateral cladding. In this paper we investigate aspects of InAlAs, which are relevant for its role as insulating lateral cladding of the laser sidewalls: carrier traps, electrical resistivity, and functionality as a sole lateral cladding. We find that a thin InAlAs spacer layer not only improves the regrowth interface morphology, but also eliminates interface-related shallow electronic states, thus improving the electrical resistivity of the interface. We further find that bulk InAlAs grown by gas-source molecular-beam epitaxy as well as InP:Fe are semi-insulating at room temperature, with specific resistivities of 3 ×107 Ω cm and 2 ×108 Ω cm, respectively. Both materials have also a high thermal activation energy for electrical conductivity (0.79 eV and 0.68 eV, respectively). In order to compare the performance of InP:Fe and InAlAs as a lateral cladding, lasers were fabricated from the same QCL wafer with differing stripe insulation materials. The resulting lasers differ mainly by the lateral insulation material: SiO2, InP:Fe (with InAlAs spacer), and pure InAlAs. All devices show a similar performance and similar temperature dependence, indicating insulating properties of InAlAs adequate for application in lateral regrowth of buried-heterostructure QCLs.

  15. ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Ping; Zhang Yuming; Zhang Yimen; Guo Hui, E-mail: chpzmm@yahoo.com.c [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2009-12-15

    The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition (LPCVD) are studied by electron spin resonance (ESR) with different illumination times. The results show that the intrinsic defects in as-grown 4H-SiC consist of carbon vacancy (V{sub C}) and complex-compounds-related V{sub C}. There are two other apexes presented in the ESR spectra after illumination by Xe light, which are likely to be V{sub Si} and V{sub C}C{sub Si}. Illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of V{sub C} to complex compounds is minimized simultaneously. It can be deduced that some V{sub Si} may be transformed to the complex-compounds-related V{sub C} because of the illumination. (semiconductor materials)

  16. Current-voltage characteristics and charge DLTS spectra of proton-bombarded Schottky diodes on semi-insulating GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Thurzo, I. (Inst. of Physics, Slovak Academy of Sciences, Bratislava (Slovakia)); Hrubcin, L. (Inst. of Electrical Engineering, Slovak Academy of Sciences, Bratislava (Slovakia)); Bartos, J. (Inst. of Physics, Slovak Academy of Sciences, Bratislava (Slovakia)); Pincik, E. (Inst. of Physics, Slovak Academy of Sciences, Bratislava (Slovakia))

    1993-10-01

    Changes in the current-voltage characteristics and charge DLTS spectra of Schottky diodes on semi-insulating GaAs after irradiation by protons at different energies and doses are presented and discussed. Apart from a progressive degradation of the Schottky barriers with enhanced proton energy and dose, there is a threshold, positioned between 10[sup 14] and 10[sup 15] protons/cm[sup 2], for observing trap-limited transients. (orig.)

  17. Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy

    Science.gov (United States)

    Noh, Young Kyun; Lee, Sang Tae; Kim, Moon Deock; Oh, Jae Eung

    2017-02-01

    Iron doped GaN layers were grown on (110) Si substrates by ammonia molecular beam epitaxy (MBE) using solid elemental iron as a source. Specular films with concentrations up to 1×1020 cm-3, as determined by secondary ion mass spectroscopy, were grown, unlike a limited incorporation of Fe into GaN by metal-rich rf plasma MBE. The Fe concentration in the film showed an exponential dependence on the inverse of source temperature with an activation energy of 3.4 eV, which agrees well to the reported value for the sublimation of Fe. A 1.5 μm thick GaN film with a sheet resistance of 1 GΩ/sq. was obtained by compensating unintentional residual donors with a small Fe concentration of 1×1017 cm-3. X-ray diffraction rocking curves indicated high crystalline quality, very similar to an undoped film, showing that the Fe incorporation required to obtain the semi-insulating film properties did not affect the structural properties of the film. The low-temperature PL spectra of highly resistive and semi-insulating Fe:GaN in the range of 1017 1018 cm-3 show dominant exciton emissions and enhanced donor-acceptor-pair (DAP) emissions, implying that Fe ions contribute to the DAP transition between donor levels and Fe-related acceptor levels, possibly compensating the residual donors to achieve the semi-insulating electrical properties.

  18. Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP

    Energy Technology Data Exchange (ETDEWEB)

    Acar, S.; Kasap, M. [Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500 Ankara (Turkey)

    2004-05-01

    The conductivity, Hall effect and magnetoresistance quantities in semi-insulating undoped GaAs and Fe-doped GaAs and InP grown by the LEC technique have been measured in the temperature range 300-420 K. It is shown that mixed conductivity is present in all samples. The experimental data were analyzed using a two-band model including electron and hole transport. A good fit has been obtained self-consistently to both conductivity and mobility. The single-band parameters have been extracted from the measured data in the studied temperature range. From ln (vertical stroke R{sub H,} {sub 0} vertical stroke T {sup 3/2}) and {sigma} vs T {sup -1} plots, activation energies of 0.77 and 0.65 eV have also been observed for GaAs and InP, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  20. On the detection performance of semi-insulating GaAs detectors coupled to multichannel ASIC DX64 for X-ray imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Zat' ko, Bohumir [Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, SK-841 04 Bratislava (Slovakia)], E-mail: elekbzat@savba.sk; Dubecky, Frantisek [Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, SK-841 04 Bratislava (Slovakia); Scepko, Pavol [T and N System, Ltd., Severna 5, SK-974 01 Banska Bystrica (Slovakia); Grybos, Pawel [Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, PL-30 059 Krakow (Poland); Mudron, Jan [MTC, a. s., Kuzmanyho 11, SK-031 01 Liptovsky Mikulas (Slovakia); Maj, Piotr; Szczygiel, Robert [Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, PL-30 059 Krakow (Poland); Frollo, Ivan [Institute of Measurement Science, Slovak Academy of Sciences, Dubravska cesta 9, SK-841 04 Bratislava (Slovakia)

    2008-06-11

    Detectors based on semi-insulating (SI) GaAs show high detection efficiency and satisfactory energy resolution for modern X-ray digital imaging applications. This work deals with the performance of SI GaAs-based detectors coupled by wire bonding to the input of multichannel readout chip DX64 (technology CMOS 0.35 {mu}m). Detectors have circular Ti/Pt/Au multilayer Schottky blocking contacts with different diameters (0.75, 0.50, 0.30 and 0.20 mm). First results of operation of the used readout system in the single-photon counting regime are given.

  1. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  2. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    Science.gov (United States)

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  3. Development of InP solid state detector and liquid scintillator containing metal complex for measurement of pp/7Be solar neutrinos and neutrinoless double beta decay

    Science.gov (United States)

    Fukuda, Yoshiyuki; Moriyama, Shigetaka

    2012-07-01

    A large volume solid state detector using a semi-insulating Indium Phosphide (InP) wafer have been developed for measurement of pp/7Be solar neutrinos. Basic performance such as the charge collection efficiency and the energy resolution were measured by 60% and 20%, respectively. In order to detect two gammas (115keV and 497keV) from neutrino capture, we have designed hybrid detector which consist InP detector and liquid xenon scintillator for IPNOS experiment. New InP detector with thin electrode (Cr 50Å- Au 50Å). For another possibility, an organic liquid scintillator containing indium complex and zirconium complex were studied for a measurement of low energy solar neutrinos and neutrinosless double beta decay, respectively. Benzonitrile was chosen as a solvent because of good solubility for the quinolinolato complexes (2 wt%) and of good light yield for the scintillation induced by gamma-ray irradiation. The photo-luminescence emission spectra of InQ3 and ZrQ4 in benzonitrile was measured and liquid scintillator cocktail using InQ3 and ZrQ4 (50mg) in benzonitrile solutions (20 mL) with secondary scintillators with PPO (100mg) and POPOP (10mg) was made. The energy spectra of incident gammas were measured, and they are first results of the gamma-ray energy spectra using luminescent of metal complexes.

  4. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    Science.gov (United States)

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

  5. Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEC GaAs as a composite

    Institute of Scientific and Technical Information of China (English)

    YANG Ruixia; ZHAO Zhengping; LOU Jianzhong; LV Miao; YANG Yongjun; LIU Lihao

    2003-01-01

    Undoped (ND) semi-insulating (SI) liquid encapsulated Czochralski (LEC) GaAs crystals were investigated by photocurrent and temperature-dependent Hall measurements. It is indicated that strong nonuniformities in the distributions of impurities and defects can occur for the NDSILEC GaAs crystal grown under a condition with strong constitutional supercooling. In such case, the deep level that dominates Fermi level is spacial location dependent, and the GaAs crystal becomes a composite consisting of a large number of elementary domains with different conductivities. The sub-bandgap photocurrent response and the carrier transport properties for this kind of composite are quite different from those for homogeneous NDSILEC GaAs.

  6. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment

    CERN Document Server

    Ivanco, J; Darmo, J; Krempasky, M; Besse, I; Senderak, R

    1999-01-01

    It is generally agreed that the substrate material quality plays a key role in the performance of back-to-back detectors of ionising radiation based on semi-insulating (SI) material. The aim of this paper is to evaluate usually overlooked problem, namely the influence of the Schottky contact preparation on detector performance. We report on different approaches to modify and control the quality of the metal/SI GaAs interface via a treatment of the SI-GaAs surface by means of low-temperature hydrogen plasma and wet etching. The measured electrical and detecting properties of such structures display a strong dependence on the history and the way the GaAs surface is treated prior to the metal evaporation. We point out, therefore, that the semiconductor surface treatment before the Schottky metallization plays a role of comparable importance to the influence of the SI-GaAs substrate properties on detector performances. (author)

  7. Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs

    Science.gov (United States)

    Sharma, T. K.; Kumar, Shailendra; Rustagi, K. C.

    2002-11-01

    Surface photovoltage spectroscopy studies on thick semi-insulating GaAs wafers are reported in the range 850-950 nm using the chopped light geometry. We observed some interesting sharp features in the sub-band-gap of SI-GaAs, which were reported recently [Appl. Phys. Lett. 79, 1715(2001); Rev. Sci. Instrum. 73, 1835 (2002)]. In this article, we present the dependence of these features on the chopping frequency and the source intensity. The intensity variation in the above-band-gap region and for the A peak (898 nm) in the sub-band-gap region could be fitted with single component while it is necessary to consider more than one component to fit the data for the Q peak (887 nm) in the sub-band-gap region. A model consistent with the observed features is also proposed.

  8. Preparation and optical properties of composite thin films with embedded InP nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    InP nanoparticles embedded in SiO2 thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The aver-age size of InP nanoparticles is in the range of 3-10 nm. The broadening and red shift of the Raman peaks were observed,which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the optical absorp-tion edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum con-finement effect. The theoretical values of the blue shift pre-dicted by the effective mass approximation model are differ-ent from the experimental results for the InP-SiO2 system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not constant and is inverse relative to the particles radius,which may be the main reason that results in the discrepancy between the theoretical and the experi-mental result. We discussed the possible transition of the direct band gap to the indirect band gap for InP nanoparti-cles embedded in SiO2 thin films.

  9. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  10. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L.; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B.; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-01

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n+-i-n+ InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  11. Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

    CERN Document Server

    Rogalla, M

    1999-01-01

    A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the field distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization. (author)

  12. THz conductivity of semi-insulating and magnetic CoFe2O4 nano-hollow structures through thermally activated polaron

    Science.gov (United States)

    Rakshit, Rupali; Serita, Kazunori; Tonouchi, Masayoshi; Mandal, Kalyan

    2016-11-01

    Herein, terahertz (THz) time domain spectroscopy is used to measure the complex conductivity of semi-insulating CoFe2O4 nanoparticles (NPs) and nano-hollow spheres (NHSs) with different diameters ranging from 100 to 350 nm having a nanocrystalline shell thickness of 19 to 90 nm, respectively. Interestingly, the magnitude of conductivity for CoFe2O4 NPs and NHSs of same average diameter (˜100 nm) for a given frequency of 0.3 THz is found to be 0.33 S/m and 9.08 S/m, respectively, indicating that the hollow structure exhibits greater THz conduction in comparison to its solid counterpart. Moreover, THz conductivity can be tailored by varying the nano-shell thickness of NHSs, and a maximum conductivity of 15.61 S/m is observed at 0.3 THz for NHSs of average diameter 250 nm. A detailed study reveals that thermally activated polaronic hopping plays the key role in determining the electrical transport property of CoFe2O4 nanostructures, which is found to solely depend on their magnitude of THz absorptivity. The non-Drude conductivity of all CoFe2O4 nanostructures is well described by the Polaron model instead of the Drude-Smith model, which is relevant for backscattering of free electrons in a nanostructured material. The Polaron model includes intra-particle and interparticle polaronic conductivities for closely spaced magnetic nanostructures and provides a mean free path of 29 nm for CoFe2O4 NPs of diameter 100 nm, which is comparable with its average crystallite size, indicating the applicability of the developed model for nanomaterials where charge transport is determined by polaronic hopping. Finally, we have demonstrated the morphology and size dependent magnetic measurements of ferrimagnetically aligned CoFe2O4 nanostructures through a vibrating sample magnetometer in the temperature range of 80-250 K, revealing that the disordered surface spin layer of nanostructures significantly controls their magnetism.

  13. Surface chemistry of InP quantum dots: a comprehensive study.

    Science.gov (United States)

    Cros-Gagneux, Arnaud; Delpech, Fabien; Nayral, Céline; Cornejo, Alfonso; Coppel, Yannick; Chaudret, Bruno

    2010-12-29

    Advanced (1)H, (13)C, and (31)P solution and solid-state NMR studies combined with IR spectroscopy were used to probe, at the molecular scale, the composition and the surface chemistry of indium phosphide (InP) quantum dots (QDs) prepared via a non-coordinating solvent strategy. This nanomaterial can be described as a core-multishell object: an InP core, with a zinc blende bulk structure, is surrounded first by a partially oxidized surface shell, which is itself surrounded by an organic coating. This organic passivating layer is composed, in the first coordination sphere, of tightly bound palmitate ligands which display two different bonding modes. A second coordination sphere includes an unexpected dialkyl ketone and residual long-chain non-coordinating solvents (ODE and its isomers) which interact through weak intermolecular bonds with the alkyl chains of the carboxylate ligands. We show that this ketone is formed during the synthesis process via a decarboxylative coupling route and provides oxidative conditions which are responsible for the oxidation of the InP core surface. This phenomenon has a significant impact on the photoluminescence properties of the as-synthesized QDs and probably accounts for the failure of further growth of the InP core.

  14. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  15. Influence of growth conditions on the performance of InP nanowire solar cells.

    Science.gov (United States)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A; Plissard, Sebastien R; Wang, Jia; Koenraad, Paul M; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-11-11

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  16. Influence of growth conditions on the performance of InP nanowire solar cells

    Science.gov (United States)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A.; Plissard, Sebastien R.; Wang, Jia; Koenraad, Paul M.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2016-11-01

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  17. A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

    Science.gov (United States)

    Thao, Dinh Nhu

    2017-03-01

    This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.

  18. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    De Franceschi, S.; Van Dam, J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, P.

    2003-01-01

    We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being

  19. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  20. Temperature Studies of Single InP Quantum Dots

    Science.gov (United States)

    1999-06-18

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012858 TITLE: Temperature Studies of Single InP Quantum Dots DISTRIBUTION...34 QWR/QD.07 St Petersburg, Russia, June 14-18, 1999 © 1999 loffe Institute Temperature studies of single InP quantum dots Valdry Zwiller, Mats-Erik...Information on the size and geometry of our self-assembled InP Quantum Dots grown on GamnP lattice matched to GaAs has been published elsewhere -I

  1. Quantum size effects in InP inner film fiber

    Institute of Scientific and Technical Information of China (English)

    WANG Ting-yun; WANG Ke-xin; LU Jun

    2005-01-01

    Based on the semiconductor amplifiing properties and the structure of optical fiber wave guide an InP inner fiber is developed.The InP inner film fiber can be employed as a small size,broadband,and ultra-short fiber amplifier.The quantum size effects of the fiber are emphatically investigated in the work.Using the experimental data,we compare the effective mass approximation (EMA) with effective parameterization within the tight binding (EPTB) models for the accurate description of the quantum size effects in InP.The results show that the EPTB model provides an excellent description of band gap variation over a wide range of sizes.The Bohr diameter and the effective Rydberg energy of InP are calculated.Finally,the amplifiing properties of the InP inner film fiber are discussed due to the quantum size effects.

  2. Donor Behavior in High-Purity Epitaxial InP.

    Science.gov (United States)

    1980-10-02

    Thermodynamic Analysis of L InP and GaAs Deposition", Journal of Phyjsica Chemical Solids 36, 111, (1975). 17. 0. Levenspiel , "Chemical Reaction Engineering",r John Wiley and Sons, NY, NY, (1972).

  3. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase II SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, high radiation resistance InP...

  4. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, InP based compound semiconductor...

  5. A contribution for the detection of deep defects in semi-insulating GaAs by means of PICTS; Ein Beitrag zum Nachweis tiefer Stoerstellen in halbisolierendem GaAs mittels PICTS

    Energy Technology Data Exchange (ETDEWEB)

    Zychowitz, G.

    2006-02-03

    The PICTS procedure is one of the most frequently applied methods for the characterization of semi-insulating semiconductors. The methodical progresses in the determination of defect parameters by this proceudure are presented in this thesis. as practicable method for the detection of a temperature-dependent change of the occupation ratio of a trap the normation of the PICTS spectra on the emission rate of the electrons is introduced. It is shown that peaks, in which this normation fails, must not applied for the determination of the defect parameters. The studies prove that for the complete charge-alteration of the defects a suitable excitation intensity must be applied. By PICTS measurements on copper-doped samples a systematic dependence of the peak heights of copper-correlated peaks on the copper content of the samples is detected. By the studies it is proved that copper can be detected by means of PICTS up to a minimal AES copper concentration of [Cu{sub min}]approx5.10{sup 14} cm{sup -3}.

  6. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  7. Deep level defects in high temperature annealed InP

    Institute of Scientific and Technical Information of China (English)

    DONG Zhiyuan; ZHAO Youwen; ZENG Yiping; DUAN Manlong; LIN Lanying

    2004-01-01

    Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed iniron phosphide ambient,while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

  8. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    Directory of Open Access Journals (Sweden)

    Pranab Biswas

    2014-05-01

    Full Text Available The diffusion behavior of arsenic (As and gallium (Ga atoms from semi-insulating GaAs (SI-GaAs into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 1018 cm−3 and 2.8 × 1019 cm−3 respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 1016 cm−3. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (AsZn–2VZn, by substituting Zn atoms (AsZn and thereby creating two zinc vacancies (VZn. Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, GaZn. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  9. Electron guns and collectors developed at INP for electron cooling devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharapa, A.N.; Shemyakin, A.V. [Institute of Nuclear Physics, Novosibirsk (Russian Federation)

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  10. InP concentrator solar cells for space applications

    Science.gov (United States)

    Ward, J. S.; Wanlass, M. W.; Coutts, T. J.; Emery, K. A.

    1991-01-01

    The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined.

  11. Solvothermal synthesis of InP quantum dots.

    Science.gov (United States)

    Nag, Angshuman; Sarma, D D

    2009-09-01

    We report an efficient and fast solvothermal route to prepare highly crystalline monodispersed InP quantum dots. This solvothermal route, not only ensures inert atmosphere, which is strictly required for the synthesis of phase pure InP quantum dots but also allows a reaction temperature as high as 430 degrees C, which is otherwise impossible to achieve using a typical solution chemistry; the higher reaction temperature makes the reaction more facile. This method also has a judicious control over the size of the quantum dots and thus in tuning the bandgap.

  12. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  13. Surface Plasmons on Highly Doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

    2016-01-01

    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

  14. 2D InP photonic crystal fabrication process development

    NARCIS (Netherlands)

    Rong, B.; Van der Drift, E.; Van der Heijden, R.W.; Salemink, H.W.M.

    2006-01-01

    We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectri

  15. Switching dynamics in InP photonic-crystal nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2016-01-01

    In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics...

  16. Experiences with digital processing of images at INPE

    Science.gov (United States)

    Mascarenhas, N. D. A. (Principal Investigator)

    1984-01-01

    Four different research experiments with digital image processing at INPE will be described: (1) edge detection by hypothesis testing; (2) image interpolation by finite impulse response filters; (3) spatial feature extraction methods in multispectral classification; and (4) translational image registration by sequential tests of hypotheses.

  17. Native-oxide-based selective area growth of InP nanowires via metal-organic molecular beam epitaxy mediated by surface diffusion.

    Science.gov (United States)

    Calahorra, Yonatan; Greenberg, Yaakov; Cohen, Shimon; Ritter, Dan

    2012-06-22

    The growth of InP nanowires on an InP(111) B substrate is reported. The substrate native oxide was not removed from the surface prior to growth. Nanowires were grown at 400 °C from gold catalysts in a selective area manner, without bulk growth. Unlike SiO(2)-based metal-organic molecular beam epitaxy selective area growth, the growth reported here is mediated by surface diffusion with a characteristic diffusion length of 4 μm, about an order of magnitude larger than values for diffusion on bare substrates. A pre-growth heating treatment at 450 °C was found to increase the yield of nanowire nucleation from the gold catalysts.

  18. Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

    Science.gov (United States)

    Flicstein, J.; Guillonneau, E.; Marquez, J.; How Kee Chun, L. S.; Maisonneuve, D.; David, C.; Wang, Zh.; Palmier, J. F.; Courant, J. L.

    2000-02-01

    We report on an accurate validation of a new Monte Carlo three-dimensional model. Simulations up to 1200 Å layer thickness have been carried out for amorphous thin film layers of SiN:H deposited at low temperature (400-650 K) on (100) InP, by vacuum ultraviolet (VUV, ˜185 nm)-induced chemical vapor deposition (CVD). The computer simulations in the mesoscopic-submicronic range are compared with atomic force microscopy and index of refraction measurements. The reconstituted surface roughness and the voids discrete representations of the bulk are found to be in good agreement with these measurements. Simultaneously at around 450 K (at ˜175°C), thermal characteristic evolution of the both surface roughness and bulk porosity showed a transition from rough to smooth deposition and from low to high density.

  19. A single crystalline InP nanowire photodetector

    Science.gov (United States)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  20. Simulation of INPE's printed circuit laboratory production line

    Science.gov (United States)

    Torgogomes, Arthur

    1988-05-01

    The development of a tool intended to improve, plan, monitor, and control INPE's Printed Circuit Laboratory Production Line is presented. A manipulatable computer model was developed. The model simulates the behavior of the production line elements, when established demand is given. A discrete simulation model of stochastic nature was created departing from study and comprehension of technical and operational characteristics. The system was modeled encompassing physical and chronological dimensions. The computer model utilizes the GASP 4 language simulation. The source program for this language was worked out to make possible such an application. The model was tested and proved operational in a 6800 Burroughs computer. The major significant results that the model provides information on necessary time between an order placed with the Laboratory and the final product ready for delivery to the client; also statistics of waiting time elapsed and starting time for production. Currently, this program is operational. It is being successfully utilized by INPE's Printed Laboratory Production Line.

  1. Azimuthally polarized cathodoluminescence from InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Brenny, B. J. M.; Osorio, C. I.; Polman, A., E-mail: polman@amolf.nl [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Dam, D. van [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Gómez Rivas, J. [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); FOM Institute DIFFER, P.O. Box 6336, 5600 HH Eindhoven (Netherlands)

    2015-11-16

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  2. Mechanistic Insights into the Formation of InP Quantum Dots**

    Science.gov (United States)

    Allen, Peter M.; Walker, Brian J.

    2011-01-01

    This paper examines the molecular mechanism of InP colloidal quantum dot (QD) syntheses. Unlike methods for monodisperse PbSe and CdSe we found that existing InP syntheses result in total depletion of molecular phosphorous species following nucleation, so QD growth is due exclusively to non-molecular ripening. We find that amines inhibit precursor depletion via solvation, and these findings may lead to better synthetic methodology for InP QDs. PMID:20025010

  3. Surface processes during purification of InP quantum dots

    OpenAIRE

    2014-01-01

    Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during ...

  4. Quantum confinement of excitons in wurtzite InP nanowires

    Science.gov (United States)

    Pemasiri, K.; Jackson, H. E.; Smith, L. M.; Wong, B. M.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C.

    2015-05-01

    Exciton resonances are observed in photocurrent spectra of 80 nm wurtzite InP nanowire devices at low temperatures, which correspond to transitions between the A, B, and C valence bands and the lower conduction band. Photocurrent spectra for 30 nm WZ nanowires exhibit shifts of the exciton resonances to higher energy, which are consistent with finite element calculations of wavefunctions of the confined electrons and holes for the various bands.

  5. Electrical properties of oxygen ion-implanted InP

    Science.gov (United States)

    He, L.; Anderson, W. A.

    1992-10-01

    The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP ( n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.

  6. [Characterizations of InP in terahertz region].

    Science.gov (United States)

    Zhang, Cai-Hong; Wang, Yuan-Yuan; Ma, Jin-Long; Jin, Biao-Bing; Xu, Wei-Wei; Kang, Lin; Chen, Jian; Wu, Pei-Heng

    2009-08-01

    Terahertz time-domain spectroscopy (THz-TDS), which directly measures the THz wave's temporal electric field, can give the amplitude and phase of the THz wave pulse simultaneously. THz-TDS is attracting more attention among scientists. InP with short carrier average collision time and low effective mass is growing up as one of the best photoconductive materials for emitting and detecting THz waves. An n-type InP of 0.35 omega x cm was characterized over the range from 0.2 to 4 THz at room temperature in the present paper with THz time-domain spectroscopy, which was placed in a closed box purged with dry nitrogen gas. Some THz optical properties, such as complex refractive index, dielectric constant, and conductivity, were extracted, based on more exact iterative method with new initial function. Drude model was also applied for simulation, which fitted well with the experimental results. Finally, the carrier average collision time, density and mobility of the InP were also characterized.

  7. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  8. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  9. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn;

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection sp...

  10. Highly doped InP as a low loss plasmonic material for mid-IR region

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

    2016-01-01

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...

  11. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...

  12. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...

  13. Lasers in InP generic photonic integration technology platforms

    Science.gov (United States)

    Latkowski, Sylwester; Lenstra, Daan

    2015-04-01

    A review is given of a number of lasers in a form of photonic integrated circuits realized on InP substrate using a generic integration approach. The potential of these photonic circuits lies in their compactness, low power consumption, and significant reduction of fabrication cost by realization in generic foundry runs. Generic integration platforms offer the possibility of realizing functionally advanced photonic circuits using combinations of just a few standardized and parameterized building blocks. This vibrant field opens new doors to innovative product development for SMEs as well as curiosity-driven research.

  14. An ab initio study of the polytypism in InP

    Science.gov (United States)

    Dacal, Luis C. O.; Cantarero, A.

    2016-09-01

    The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected due to the fact that the wurtzite stacking sequence (ABAB) is part of the zincblende one (ABCABC), but with an unexpected asymmetry between the valence and the conduction bands. We also present results for the complex dielectric function, clearly showing the influence of the stacking on the homostructure values and surprisingly proving that the correspondent bulk results can be used to reproduce the polytypism even in the limit we considered.

  15. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

    Science.gov (United States)

    Leach, J. H.; Biswas, N.; Paskova, T.; Preble, E. A.; Evans, K. R.; Wu, M.; Ni, X.; Li, X.; Özgür, Ü.; Morkoç, H.

    2011-02-01

    Bulk GaN substrates promise to bring the full potential of nitride-based devices to bear since they offer a low thermal and lattice mismatched alternative to foreign substrates for epitaxial growth. However, due to the high cost and low availability of bulk GaN substrates, effects such as surface misorientation (offcut), surface polishing, and preparation of such substrates on subsequent epitaxy are still not well understood. As such, AlGaN/GaN heterostructures with nominal Al compositions of 25% were grown by MOCVD on semi-insulating bulk GaN substrates with offcuts ranging from 0.05 to 1.95° in the m-direction (10 10) to attempt to determine the optimal offcut for bulk GaN substrates for AlGaN-based HFET devices. X-ray diffraction (XRD) studies indicate that the Al composition does not vary with offcut, however reciprocal space mapping shows evidence of strain relaxation of the AlGaN in samples grown on substrates with offcut >1.1°. Additionally, we observed a minimum in sheet resistance of the 2DEGs for substrates with offcuts near 0.5°, arising from higher mobilities in these samples. Evidence of an optimal substrate misorientation is important for AlGaN-based devices grown on bulk GaN substrates.

  16. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  17. Systems and methods for advanced ultra-high-performance InP solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  18. Preliminary design of the INPE's Solar Vector Magnetograph

    CERN Document Server

    Vieira, L E A; Lago, A Dal; Wrasse, C; Echer, E; Guarnieri, F L; Cardoso, F Reis; Guerrero, G; Costa, J Rezende; Palacios, J; Balmaceda, L; Alves, L Ribeiro; da Silva, L; Costa, L L; Sampaio, M; Soares, M C Rabello; Barbosa, M; Domingues, M; Rigozo, N; Mendes, O; Jauer, P; Dallaqua, R; Branco, R H; Stekel, T; Gonzalez, W; Kabata, W

    2016-01-01

    We describe the preliminary design of a magnetograph and visible-light imager instrument to study the solar dynamo processes through observations of the solar surface magnetic field distribution. The instrument will provide measurements of the vector magnetic field and of the line-of-sight velocity in the solar photosphere. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in reaching the scientific goals of The Atmospheric and Space Science Coordination (CEA) at the Brazilian National Institute for Space Research (INPE). In particular, the CEA's space weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is acquiring progressively the know-how to build state-of-art sol...

  19. Photoluminescence of ingaas/inp grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Harmand Jean Christophe

    2004-01-01

    Full Text Available Photoluminescence (PL measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate. The origins of the several luminescence processes observed at low temperature were determined by studying their different behaviors with increasing temperature and excitation power and by comparing the results with the data found in the literature. The following transitions have been identified: one transition involving localized excitons and two transitions involving acceptor impurities. A review of the main works published in the literature related to the optical transitions observed at low temperature in InGaAs/InP is also presented.

  20. Extended Wavelength InP Based Avalanche Diodes for MWIR Response Project

    Data.gov (United States)

    National Aeronautics and Space Administration — For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates...

  1. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  2. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  3. 6-Mercaptohexanoic acid assisted synthesis of high quality InP quantum dots for optoelectronic applications

    Science.gov (United States)

    Mahmoud, Waleed E.; Chang, Y. C.; Al-Ghamdi, A. A.; Al-Marzouki, F.; Bronstein, Lyudmila M.

    2013-04-01

    Indium phosphide semiconductor quantum dots are of significant heed as their applications encompass a spacious concatenation in LEDs and solar cells technologies. For improving their serviceable prominence, there is a real demand for a fashion that furnishes prompt and large mass production of mightily monodispersed nanoparticles. This study conveys an efficacious and fast recipe of generating substantially monodispersed InP quantum dots via water based route technique using a novel surfactant. Herein, InP QDs have been prepared using 6-mercaptohexanoic acid for achieving an effective surface passivation of monodispersed InP QDs with highly luminescence at temperature 50 °C. The as prepared quantum dots were investigated by transmission electron microscopy, luminescence spectroscopy, and X-ray diffraction. The XRD depicted that the InP quantum dots have a cubic zinc blend structure. TEM image revealed that the prepared quantum dots are monodispersed and their average particle size of about 4 nm. Energy dispersive X-ray spectroscopy confirmed the existence of organic ligand as a shell around InP nanoparticles. Time resolved spectra depicted that the capping agent passivated the InP QDs surface and enhanced the luminescence emission.

  4. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    Science.gov (United States)

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  5. Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates

    Institute of Scientific and Technical Information of China (English)

    Chang Hu-Dong; Sun Bing; Xue Bai-Qing; Liu Gui-Ming; Zhao Wei; Wang Sheng-Kai; Liu Hong-Gang

    2013-01-01

    In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time.Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer,In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current,higher transconductance,lower gate leakage current,lower subthreshold swing,and higher effective channel mobility.These In0.4Ga0.6As MOSFETs (gate length 2 μm) with an In0.49Ga0.s1P barrier layer exhibit a high drive current of 117 mA/mm,a high transconductance of 71.9 mS/mm,and a maximum effective channel mobility of 1266 cm2/(V·s).

  6. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  7. Surface processes during purification of InP quantum dots.

    Science.gov (United States)

    Mordvinova, Natalia; Emelin, Pavel; Vinokurov, Alexander; Dorofeev, Sergey; Abakumov, Artem; Kuznetsova, Tatiana

    2014-01-01

    Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH)3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  8. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

    Science.gov (United States)

    García, S.; Pérez, S.; Íñiguez-de-la-Torre, I.; Mateos, J.; González, T.

    2014-01-01

    In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscillations of diodes based on InP and GaN with around 1 μm active region length. We compare the power spectral density of current sequences in diodes with and without notch for different lengths and two doping profiles. It is found that InP structures provide 400 GHz current oscillations for the fundamental harmonic in structures without notch and around 140 GHz in notched diodes. On the other hand, GaN diodes can operate up to 300 GHz for the fundamental harmonic, and when the notch is effective, a larger number of harmonics, reaching the Terahertz range, with higher spectral purity than in InP diodes are generated. Therefore, GaN-based diodes offer a high power alternative for sub-millimeter wave Gunn oscillations.

  9. Twin and grain boundary in InP: A synchrotron radiation study

    Energy Technology Data Exchange (ETDEWEB)

    Han, Y.; Liu, X.; Jiao, J.; Lin, L. [Chinese Academy of Sciences, Beijing (China). Inst. of Semiconductors; Jiang, J.; Wang, Z.; Tian, Y. [Chinese Academy of Sciences, Beijing (China). Beijing Synchrotron Radiation Lab.

    1998-12-31

    Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed.

  10. Comparison of low-temperature oxides on polycrystalline InP by AES, SIMS and XPS

    Science.gov (United States)

    Kazmerski, L. L.; Ireland, P. J.; Sheldon, P.; Chu, T. L.; Chu, S. S.; Lin, C. L.

    1980-10-01

    Oxides and their interfaces with polycrystalline InP are examined using complementary high-resolution AES, SIMS and XPS. The oxides, grown by low-temperature dry and wet processes, are compared for composition and phase content. SIMS and AES depth-composition data are used to compare the uniformity of the oxide layers and the composition of the interfacial region. Confirmation of impurity accumulation at the oxide-InP interfaces is presented, including buildup of elemental P and InP dopant, S. Other impurities associated with the growth of the wet oxide are found to be localized at the interface. Some evidence of impurity accumulation at grain boundaries at the wet oxide-polycrystalline InP interface is provided by SIMS and EBIC.

  11. Temperature and Thickness Effects on Electrical Properties of InP Films Deposited by Spray Pyrolysis

    Institute of Scientific and Technical Information of China (English)

    Rcfik Kayah; Mehmet Ari; Mustafa Oztas; Metin Bedir; Funda Aksoy

    2009-01-01

    InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500 ℃ with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction (XRD). It is found that the crystal structure of the InP films is polycrystailine hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.

  12. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  13. ANISOTROPIC RADIATIVE DECAY OF InP SELF-ASSEMBLED QUANTUM DOTS

    OpenAIRE

    1998-01-01

    Strong optical anisotropy of the photoluminescence (PL) spectra and time resolvedPL spectra is observed in InP self-assembled quantum dots (SADs) embedded inGaInP matrix. From the TEM study, the origin of the optical anisotropy appearsto be due to the formation of composition modulation planes in GaInP matrix.We also studied the size dependence of the radiative decay time. In the vicinityof the PL peak from InP SADs, slowdown of the PL decay time was observed ondecreasing the detection energy...

  14. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

    Science.gov (United States)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

    1997-01-01

    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  15. Spin Quantum Beats in InP Quantum Dots in a Magnetic Field

    Science.gov (United States)

    2001-06-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013252 TITLE: Spin Quantum Beats in InP Quantum Dots in a Magnetic Field...Technology" SRPN.05 St Petersburg, Russia, June 18-22, 2001 (0 2001 loffe Institute Spin quantum beats in InP quantum dots in a magnetic field L A... quantum dots . A detailed description of the structure is given in [ ]. The luminescence was excited by 3 ps pulses of a Ti:sapphire laser, 40 meV above

  16. Modeling on the size dependent properties of InP quantum dots: a hybrid functional study

    Science.gov (United States)

    Cho, Eunseog; Jang, Hyosook; Lee, Junho; Jang, Eunjoo

    2013-05-01

    Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2-4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values.

  17. InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators

    Science.gov (United States)

    Kim, Mi-Ra; Rhee, Jin-Koo; Lee, Chang-Woo; Chae, Yeon-Sik; Choi, Jae-Hyun; Kim, Wan-Joo

    We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22dBm at a frequency of 90.13GHz. Its input voltage and corresponding current were 8.55V and 252mA, respectively.

  18. Self-assembly structure formation on patterned InP surfaces

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Self-assembly of polystyrene spheres guided by patterned n-type InP substrates has been investigated. InP surfaces were patterned using a variety of methods including wet chemical etching,sputter coating,thermal evaporation,and photo lithography. The self-assembly of polystyrene spheres depended on the appearance of patterns and was affected by the deposition techniques (sputter coating and thermal evaporation) of Au micro-squares. SEM and AFM were used to characterize the surface morphologies.

  19. Design and fabrication of InP micro-ring resonant detectors

    Institute of Scientific and Technical Information of China (English)

    辛海明; 黄永清; 陈海波; 黄辉; 任晓敏; 周星光

    2009-01-01

    The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.

  20. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ......Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches...

  1. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp){sub 3})

    Energy Technology Data Exchange (ETDEWEB)

    Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y

    2003-06-30

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp){sub 3}). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP.

  2. Absence of tumor suppressor tumor protein 53-induced nuclear protein 1 (TP53INP1) sensitizes mouse thymocytes and embryonic fibroblasts to redox-driven apoptosis.

    Science.gov (United States)

    N'guessan, Prudence; Pouyet, Laurent; Gosset, Gaëlle; Hamlaoui, Sonia; Seillier, Marion; Cano, Carla E; Seux, Mylène; Stocker, Pierre; Culcasi, Marcel; Iovanna, Juan L; Dusetti, Nelson J; Pietri, Sylvia; Carrier, Alice

    2011-09-15

    The p53-transcriptional target TP53INP1 is a potent stress-response protein promoting p53 activity. We previously showed that ectopic overexpression of TP53INP1 facilitates cell cycle arrest as well as cell death. Here we report a study investigating cell death in mice deficient for TP53INP1. Surprisingly, we found enhanced stress-induced apoptosis in TP53INP1-deficient cells. This observation is underpinned in different cell types in vivo (thymocytes) and in vitro (thymocytes and MEFs), following different types of injury inducing either p53-dependent or -independent cell death. Nevertheless, absence of TP53INP1 is unable to overcome impaired cell death of p53-deficient thymocytes. Stress-induced ROS production is enhanced in the absence of TP53INP1, and antioxidant NAC complementation abolishes increased sensitivity to apoptosis of TP53INP1-deficient cells. Furthermore, antioxidant defenses are defective in TP53INP1-deficient mice in correlation with ROS dysregulation. Finally, we show that autophagy is reduced in TP53INP1-deficient cells both at the basal level and upon stress. Altogether, these data show that impaired ROS regulation in TP53INP1-deficient cells is responsible for their sensitivity to induced apoptosis. In addition, they suggest that this sensitivity could rely on a defect of autophagy. Therefore, these data emphasize the role of TP53INP1 in protection against cell injury.

  3. Voc Degradation in TF-VLS Grown InP Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yubo; Sun, Xingshu; Johnston, Steve; Sutter-Fella, Carolin M.; Hettick, Mark; Javey, Ali; Bermel, Peter

    2016-11-21

    Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the whole sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.

  4. X-Ray Photoelectron Spectroscopic Study of Oxidation of InP

    Science.gov (United States)

    Shibata, Noboru; Ikoma, Hideaki

    1992-12-01

    InP was oxidized chemically (in boiling deionized water), thermally (dry oxygen, 260°C, 30 min) and chemically under light illumination from a xenon arc lamp. The chemical compositions and their depth distributions from the surface of these oxides as well as the InP native oxide (naturally grown) were studied by angle-resolved X-ray photoelectron spectroscopy (XPS) and XPS combined with in situ Ar+ ion etching. In any oxide, indium is first oxidized to form In2O3 perhaps due to depletion of phosphorus from the InP surface induced by contact annealing, etc. InPO3 and/or InPO4 are then successively grown on an In2O3 or In2O3 rich layer. In and P atoms diffuse through the already grown In2O3 layer and react with oxidant at the surface to form InPO3 and/or InPO4. Light illumination was found to strongly enhance oxidation of InP, and substantially increase InPO3 and InPO4.

  5. Investigation of High Speed ICs in InP Using MIS Structures.

    Science.gov (United States)

    1984-10-01

    3x3 digital multiplier for demonstration of the InP MISFET technolgy provides MSI levels of circuit integration as well as a self test mode of circuit...variables such as doping levels, oxide capacitance, mobility , transconductance, and even velocity saturation effects for short channel lengths. The end

  6. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K...

  7. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  8. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    Directory of Open Access Journals (Sweden)

    Ma Li

    2011-01-01

    Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

  9. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  10. InP DHBT MMICs for millimeter-wave front-ends

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

    2009-01-01

    In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

  11. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves;

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology...

  12. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model co...

  13. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  14. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas;

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  15. Epitaxial Growth of Semi-Insulating GaAs

    Science.gov (United States)

    1978-03-01

    CA 95051 Mr. R . Bell, K 101 Varlan Associates 6ll Hansen Way Palo Äl^o, CA 9^301+ \\ Mr. R . Bierl Raytheon Compa 28 Seyon Street Walthon, MA...BASI Program Code No. 7D10 78 Monitored by Office of Naval Research Arlington, Virginia 22217 Under Contract No. N 00014077 C 0542 06 - • r ...Supervisor and S. T. Jolly is the Project Scientist. D. S. Yaney and D. R . Capewell also participated in the research project. £> iii/iv 1 r

  16. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Directory of Open Access Journals (Sweden)

    R. E. Mamouri

    2015-12-01

    Full Text Available We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN and ice nucleating particle (INP number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN and with radius > 250 nm (APC250, reservoir of favorable INP, as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization can be retrieved from lidar-derived aerosol extinction coefficients (AEC with relative uncertainties of a factor of around 2 (APC50, and of about 25–50 % (APC250, ASC. Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke. We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine. Our study is based on multiyear Aerosol Robotic Network (AERONET photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN and published INP parameterization schemes (with APC250 and ASC as input we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  17. Voltammetric Study and Determination of Phenylephrine Hydrochloride at INP-Nafion-Modified CPE Sensor Employing Differential Pulse Voltammetry

    Directory of Open Access Journals (Sweden)

    Zeinab Pourghobadi

    2014-03-01

    Full Text Available In this study, describes the voltammetric oxidation and determination of phenylephrine (PHE hydrochloride at a new chemically modified electrode. Iron nanoparticle (INPs was dispersed in Nafion solution to obtain a INP-Nafion-modified CPE for the voltammetric analysis of PHE .The electrochemical behaviour of PHE on INP-Nafion-modified CPE was studied, using cyclic voltammetry as a diagnostic technique. The effects of amount of INPs-Nafion dispersion, pH, and scan rate on the response of modified electrode for the oxidation of PHE were investigated. Using differential pulse voltammetry (DPV, the modified electrode indicated a dynamic linear range for quantitative determination of PHE in the range of 5 μM−130 μM, and the detection limit was estimated to be 0.76 μM. The method was developed for the determination of PHE in pharmaceutical samples with satisfactory results.

  18. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    Science.gov (United States)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  19. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Science.gov (United States)

    Mamouri, Rodanthi-Elisavet; Ansmann, Albert

    2016-05-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols), n100, dry (particles with dry radius > 100 nm, reservoir of desert dust CCN), and of n250, dry (particles with dry radius > 250 nm, reservoir of favorable INP), as well as profiles of the particle surface area concentration sdry (used in INP parameterizations) can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5-2 in the case of n50, dry and n100, dry and of about 25-50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine) and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input) and available INP parameterization schemes (with n250, dry and sdry as input) we finally compute

  20. Large area bulk superconductors

    Science.gov (United States)

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  1. Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

    Science.gov (United States)

    Jevasuwan, Wipakorn; Boonpeng, Poonyasiri; Panyakeow, Somsak; Ratanathammaphan, Somchai

    2010-11-01

    In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.

  2. On the usage of classical nucleation theory in quantification of the impact of bacterial INP on weather and climate

    Science.gov (United States)

    Sahyoun, Maher; Wex, Heike; Gosewinkel, Ulrich; Šantl-Temkiv, Tina; Nielsen, Niels W.; Finster, Kai; Sørensen, Jens H.; Stratmann, Frank; Korsholm, Ulrik S.

    2016-08-01

    Bacterial ice-nucleating particles (INP) are present in the atmosphere and efficient in heterogeneous ice-nucleation at temperatures up to -2 °C in mixed-phase clouds. However, due to their low emission rates, their climatic impact was considered insignificant in previous modeling studies. In view of uncertainties about the actual atmospheric emission rates and concentrations of bacterial INP, it is important to re-investigate the threshold fraction of cloud droplets containing bacterial INP for a pronounced effect on ice-nucleation, by using a suitable parameterization that describes the ice-nucleation process by bacterial INP properly. Therefore, we compared two heterogeneous ice-nucleation rate parameterizations, denoted CH08 and HOO10 herein, both of which are based on classical-nucleation-theory and measurements, and use similar equations, but different parameters, to an empirical parameterization, denoted HAR13 herein, which considers implicitly the number of bacterial INP. All parameterizations were used to calculate the ice-nucleation probability offline. HAR13 and HOO10 were implemented and tested in a one-dimensional version of a weather-forecast-model in two meteorological cases. Ice-nucleation-probabilities based on HAR13 and CH08 were similar, in spite of their different derivation, and were higher than those based on HOO10. This study shows the importance of the method of parameterization and of the input variable, number of bacterial INP, for accurately assessing their role in meteorological and climatic processes.

  3. Electrostatic Stabilized InP Colloidal Quantum Dots with High Photoluminescence Efficiency.

    Science.gov (United States)

    Mnoyan, Anush N; Kirakosyan, Artavazd Gh; Kim, Hyunki; Jang, Ho Seong; Jeon, Duk Young

    2015-06-30

    Electrostatically stabilized InP quantum dots (QDs) showing a high luminescence yield of 16% without any long alkyl chain coordinating ligands on their surface are demonstrated. This is achieved by UV-etching the QDs in the presence of fluoric and sulfuric acids. Fluoric acid plays a critical role in selectively etching nonradiative sites during the ligand-exchange process and in relieving the acidity of the solution to prevent destruction of the QDs. Given that the InP QDs show high luminescence without any electrical barriers, such as long alkyl ligands or inorganic shells, this method can be applied for QD treatment for application to highly efficient QD-based optoelectronic devices.

  4. Far field emission profile of pure wurtzite InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bulgarini, Gabriele, E-mail: g.bulgarini@tudelft.nl; Reimer, Michael E.; Zwiller, Val [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Dalacu, Dan; Poole, Philip J.; Lapointe, Jean [National Research Council, Ottawa, Ontario, K1A 0R6 (Canada)

    2014-11-10

    We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to the nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.

  5. Low-Threshold Conjugated Polymer Distributed Feedback Lasers on InP Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHANG Su-Mei; ZHANG Ding-Ke; MA Dong-Ge

    2008-01-01

    We demonstrate a low threshold polymer sofid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure.The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene](MEH-PPV) doped polystyrene (PS) and formed by drop-coating method.The second order Bragg scattering region on the InP substrate gave rise to strong feedback,thus a lazing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd:YAG pulsed laser.The devices show a laser threshold as low as 7n J/pulse.

  6. Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    WANG Gang; MA YuXiang

    2009-01-01

    An ensemble Monte Carlo simulation is presented to investigate the avalanche multiplication process in thin InP avalanche photodiodes (APDs). Analytical band structures are applied to the description of the conduction and valence band, and impact ionization is treated as an additional scattering mecha-nism with the Keldysh formula. Multiplication gain and excess noise factor of InP p~+-i-n~+ APDs aresimulated and obvious excess noise reduction is found in the thinner devices. The effect of dead space on excess noise in thin APD structures is investigated by the distribution of impact ionization events within the multiplication region. It is found that the dead space can suppress the feedback ionization events resulting in a more deterministic avalanche multiplication process and reduce the excess noise in thinner APDs.

  7. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    Science.gov (United States)

    Mannarino, Manuel; Chintala, Ravi; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof; Vandervorst, Wilfried

    2015-12-01

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  8. Electrical and thermal characterization of single and multi-finger InP DHBTs

    DEFF Research Database (Denmark)

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2015-01-01

    This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal...... characteristics. The results are presented comparing different device dimensions and number of fingers. This work gives directions towards further optimization of geometrical parameters and reduction of thermal effects....

  9. Photoluminescence Imaging Characterization of Thin-Film InP

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Steve; Allende Motz, Alyssa; Moore, James; Zheng, Maxwell; Javey, Ali; Bermel, Peter

    2015-06-14

    Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (u-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by u-PCD, which can be less sensitive to surface recombination.

  10. High performance photodetectors based on high quality InP nanowires

    Science.gov (United States)

    Yang, Yan-Kun; Yang, Tie-Feng; Li, Hong-Lai; Qi, Zhao-Yang; Chen, Xin-Liang; Wu, Wen-Qiang; Hu, Xue-Lu; He, Peng-Bin; Jiang, Ying; Hu, Wei; Zhang, Qing-Lin; Zhuang, Xiu-Juan; Zhu, Xiao-Li; Pan, An-Lian

    2016-11-01

    In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

  11. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  12. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    Science.gov (United States)

    Steele, J. A.; Lewis, R. A.; Sirbu, L.; Enachi, M.; Tiginyanu, I. M.; Skuratov, V. A.

    2015-04-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index neff and compared to effective media approximations.

  13. Enhanced luminescence of near-surface quantum wells passivated in situ by InP

    Energy Technology Data Exchange (ETDEWEB)

    Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J. [Helsinki Univ. of Technology, Espoo (Finland). Optoelectronics Lab.; Ahopelto, J. [VTT Electronics, Espoo (Finland)

    1996-12-31

    The authors have studied the optical properties of MOVPE grown Al{sub x}Ga{sub 1{minus}x}As/GaAs structures passivated by in situ deposition of InP on the surface. One monolayer of InP was used for the passivation. The surface recombination was studied by photoluminescence measurements of near-surface Al{sub 0.22}Ga{sub 0.78}As/GaAs quantum wells. The luminescence intensity of the passivated samples increased by about five orders of magnitude for quantum wells located at less than 5 nm from the surface as compared to unpassivated samples. Furthermore, the authors observed a blueshift of 15 meV for a passivated surface quantum well. The effect of the thin InP layer on the Fermi level pinning on the surface was studied by photoreflectance of a surface-i-n{sup +} sample. The pinning position was reduced by 0.3 eV from the mid-bandgap value.

  14. Aqueous bromine etching of InP: a specific surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

    2012-06-15

    The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program

    Science.gov (United States)

    Schuch, Nelson Jorge; Cupertino Durao, Otavio S.

    The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (CBP) and the results of the NANOSATC-BR1, the first Brazilian CubeSat launching, expected for 2014's first semester, are presented. The CBP consists of two CubeSats, NANOSATC-BR 1 (1U) & 2 (2U) and is expected operate in orbit for at least 12 months each, with capacity building in space science, engineering and computer sciences for the development of space technologies using CubeSats satellites. The INPE-UFSM’s CBP Cooperation is basically among: (i) the Southern Regional Space Research Center (CRS), from the Brazilian INPE/MCTI, where acts the Program's General Coordinator and Projects NANOSATC-BR 1 & 2 Manager, having technical collaboration and management of the Mission’s General Coordinator for Engineering and Space Technology at INPE’s Headquarter (HQ), in São José dos Campos, São Paulo; (ii) the Santa Maria Space Science Laboratory (LACESM/CT) from the Federal University of Santa Maria - (UFSM); (iii) the Santa Maria Design House (SMDH); (iv) the Graduate Program in Microelectronics from the Federal University of Rio Grande do Sul (MG/II/UFRGS); and (v) the Aeronautic Institute of Technology (ITA/DCTA/CA-MD). The INPE-UFSM’s CBP has the involvement of UFSM' undergraduate students and graduate students from: INPE/MCTI, MG/II/UFRGS and ITA/DCTA/CA-MD. The NANOSATC-BR 1 & 2 Projects Ground Stations (GS) capacity building operation with VHF/UHF band and S-band antennas, are described in two specific papers at this COSPAR-2014. This paper focuses on the development of NANOSATC-BR 1 & 2 and on the launching of NANOSATC-BR1. The Projects' concepts were developed to: i) monitor, in real time, the Geospace, the Ionosphere, the energetic particle precipitation and the disturbances at the Earth's Magnetosphere over the Brazilian Territory, and ii) the determination of their effects on regions such as the South American Magnetic Anomaly (SAMA) and the Brazilian sector of the

  16. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.

    2008-01-01

    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  17. Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

    Science.gov (United States)

    Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

    2015-03-30

    The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research.

  18. Radiative Bulk Viscosity

    CERN Document Server

    Chen, X

    2001-01-01

    Viscous resistance to changes in the volume of a gas arises when different degrees of freedom have different relaxation times. Collisions tend to oppose the resulting departures from equilibrium and, in so doing, generate entropy. Even for a classical gas of hard spheres, when the mean free paths or mean flight times of constituent particles are long, we find a nonvanishing bulk viscosity. Here we apply a method recently used to uncover this result for a classical rarefied gas to radiative transfer theory and derive an expression for the radiative stress tensor for a gray medium with absorption and Thomson scattering. We determine the transport coefficients through the calculation of the comoving entropy generation. When scattering dominates absorption, the bulk viscosity becomes much larger than either the shear viscosity or the thermal conductivity.

  19. InP by Planar Reactive Deposition and GaAs by Low Pressure Metal Organic Chemical Vapor Deposition.

    Science.gov (United States)

    1981-02-01

    This inter- pretation is consistent with the fact that In2S3 is quite stable,(L7,18) whereas Cd2P 3 is quite volatile. (19) InP did not form until the...hypothesis regarding InP grain boundary passivation. Besides InP and CdS, the compounds Cd 2P3 , CdIn 2 S4 (Ref. 20) and (CdS)3x - ( In2S3 ).x (Ref. 18...PROCESSING: 2HRSAT425 C CdS +,(BARS) 1 GLASS SIDE VIEW I n (S)~,I (DOTS)~ (BARS) In2S3 (DOTS) (Cd) Figure 6. Scanning electron microscope (left) and

  20. Synthesis and properties of ultra-long InP nanowires on glass

    Science.gov (United States)

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-01

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ˜250 μm) InP NWs, with an exceptionally high growth rate of ˜25 μm min-1, were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  1. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  2. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  3. Optical anisotropy in InP string-like aligned quantum dots

    Science.gov (United States)

    Kim, Yongmin; Song, J. D.; Han, I. K.

    2014-06-01

    InP quantum dots were grown by using the molecular beam epitaxy technique. The quantum dots were connected and composed a string-like one-dimensional structure in the [1-10] crystal direction due to the strain field along the [110] direction. Two prominent photoluminescence transitions from normal quantum dots and string-like one-dimensional structures were observed and showed strong optical emission anisotropy. Both peaks also showed blue-shifts while rotating the emission polarization from the [1-10] to the [110] direction. Such optical transition behaviors are the consequence of valence band mixing caused by the strain field along the [110] crystal direction.

  4. Langmuir-Blodgett monolayers of InP quantum dots with short chain ligands.

    Science.gov (United States)

    Lambert, K; Wittebrood, L; Moreels, I; Deresmes, D; Grandidier, B; Hens, Z

    2006-08-15

    We demonstrate the organization of nearly monodisperse colloidal InP quantum dots at the air/water interface in Langmuir monolayers. The organization of the particles is monitored in situ by surface pressure-surface area measurements and ex situ by AFM measurements on films transferred to mica by Langmuir-Blodgett deposition. The influence of different ligands on the quality of the monolayer formed has been studied. We show that densely packed monolayers with little holes can be formed using short chain ligands like pyridine and pentamethylene sulfide. The advantage of using short chain ligands for electron tunneling to or from the quantum dots is demonstrated using scanning tunneling spectroscopy.

  5. Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

    Science.gov (United States)

    Shamir, N.; Ritter, D.; Cytermann, C.

    2002-06-01

    A tunnel diode collector contact to InP based PNP heterojunction bipolar transistors (HBTs) is suggested and demonstrated. The additional heavily doped n-type contact layer replaces the thick p-type contact layer required in conventional structures. The thermal and electrical properties of the collector contact layer thus become similar to those of NPN HBTs. A secondary ion mass spectroscopy study explores the maximum tin doping level that can be obtained in the base. Finally, the temperature dependence of the current gain is presented and interpreted.

  6. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    (DHBTs). In this paper we describe the design methodology adopted and the results obtained at 86 GHz and 140 GHz. In the former case, 14.5 dBm of output power at the compression point, 14.5 dB of gain and 19.6 % of PAE are obtained from a four-transistor power cell. At 140 GHz, the same architecture...... gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology....

  7. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

    OpenAIRE

    Gocalinska, A.; Manganaro, M.; Vvedensky, D. D.; Pelucchi, E.

    2012-01-01

    We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6deg and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These o...

  8. Confinement effect in a quantum well dot induced by an InP stressor

    Science.gov (United States)

    Tulkki, J.; Heinämäki, A.

    1995-09-01

    We have calculated the confinement effect in an In1-xGaxAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1-->HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.

  9. Implantación iónica en InP para aplicaciones en dispositivos

    OpenAIRE

    Martín Pacheco, Jaime Miguel

    1995-01-01

    La presente tesis muestra en primer lugar los sistemas de control diseñados y desarrollados para conseguir el perfecto funcionamiento del implantador de la facultad de físicas. Se presenta luego un completo estudio de la obtención por implantación de capas tipo n (por implantaciones de si y si/p), tipo p (con mg, mg/p o mg/ar) y capas de alta resistividad (por he y ti) en inp, tanto desde el punto de vista eléctrico (medidas de resistividad y efecto hall y de sims) como óptico (por fotolumini...

  10. Influence of Grain Size on Electrical and Optical Properties of InP Films

    Institute of Scientific and Technical Information of China (English)

    Mustafa (O)ztas

    2008-01-01

    InP film samples were prepared by spray pyrolysis technique using aqueous solutions of lnCl3 and Na2HPO4,which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film.The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.

  11. Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    Science.gov (United States)

    Yanase, Shougo; Sasakura, Hirotaka; Hara, Shinjiro; Motohisa, Junichi

    2017-04-01

    We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. InAsP quantum dots were embedded in these density-controlled InP NW arrays, and clear single-photon emission and exciton-biexciton cascaded emission were confirmed by excitation-dependent photoluminescence and photon correlation measurements.

  12. InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    2002-01-01

    GaAs (100) substrates by MOCVD. InP quantum dots grown on In(0.5)Al(0.3)Ga(0.2)P have a high density on the order of about 1 - 2 x 10/sq cm with a...dominant size of about 10-15 nm for 7.5 ML growth. (1) These In(0.5)Al(0.3)Ga(0.2)P/ InP quantum dots have previously been characterized by atomic-force

  13. Concepts for connectivity and interoperability of world space data networks: INPE proposal to CCSDS/Panel 3

    Science.gov (United States)

    Bergamini, E. W.

    1983-05-01

    Concepts are presented for an architectural end-to-end reference model based on the identification of classes of applications and products to be offered by services required to exchange data in operational support of space data systems. An Internetwork Transfer Frame (ITF) structure and basic concepts of a protocol are proposed for operational interconnection of data networks. The upward compatibility of these concepts with the higher layers of a standard data interchange structure (SDIS) model is also considered, based on INPE proposal to CCSDS/PANEL 2. Implementation aspects of the proposed model are also presented with respect to INPE's network.

  14. Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes

    Directory of Open Access Journals (Sweden)

    Vakiv M. M.

    2010-06-01

    Full Text Available It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The concentration of electrons in InP layers decreases and their mobility increases on optimal amounts of Yb and Al in the melt. This technology may be used in producing structures for Gunn diodes, photoreceivers and other optoelectronic devices.

  15. The design and manufacture of a notch structure for a planar InP Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu

    2013-02-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

  16. The design and manufacture of a notch structure for a planar InP Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

    2013-01-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode; the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

  17. Growth and characterization of epitaxial SrF2 on InP(100)

    Science.gov (United States)

    Sinharoy, S.; Hoffman, R. A.; Rieger, J. H.; Warner, J. D.; Bhasin, K. B.

    1986-01-01

    The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.

  18. TP53INP1, a tumor suppressor, interacts with LC3 and ATG8-family proteins through the LC3-interacting region (LIR) and promotes autophagy-dependent cell death.

    Science.gov (United States)

    Seillier, M; Peuget, S; Gayet, O; Gauthier, C; N'Guessan, P; Monte, M; Carrier, A; Iovanna, J L; Dusetti, N J

    2012-09-01

    TP53INP1 (tumor protein 53-induced nuclear protein 1) is a tumor suppressor, whose expression is downregulated in cancers from different organs. It was described as a p53 target gene involved in cell death, cell-cycle arrest and cellular migration. In this work, we show that TP53INP1 is also able to interact with ATG8-family proteins and to induce autophagy-dependent cell death. In agreement with this finding, we observe that TP53INP1, which is mainly nuclear, relocalizes in autophagosomes during autophagy where it is eventually degraded. TP53INP1-LC3 interaction occurs via a functional LC3-interacting region (LIR). Inactivating mutations of this sequence abolish TP53INP1-LC3 interaction, relocalize TP53INP1 in autophagosomes and decrease TP53INP1 ability to trigger cell death. Interestingly, TP53INP1 binds to ATG8-family proteins with higher affinity than p62, suggesting that it could partially displace p62 from autophagosomes, modifying thereby their composition. Moreover, silencing the expression of autophagy related genes (ATG5 or Beclin-1) or inhibiting caspase activity significantly decreases cell death induced by TP53INP1. These data indicate that cell death observed after TP53INP1-LC3 interaction depends on both autophagy and caspase activity. We conclude that TP53INP1 could act as a tumor suppressor by inducing cell death by caspase-dependent autophagy.

  19. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

    Science.gov (United States)

    Azoulay, R.; Clei, A.; Dugrand, L.; Draïdia, auN.; Leroux, G.; Biblemont, S.

    1991-01-01

    The growth of GaAs on InP has attracted considerable interest recently because of the possibility of integration of GaAs electronic devices and 1.3 μm optical devices on the same wafer. In this work, we have investigated the growth of GaAs MESFETs and doped channel MIS-like FETs on InP by atmospheric pressure OMCVD. Because of the difference between the thermal expansion coefficient of GaAs and InP, the layers are under biaxial strain. The lowest FWHM of the (004) reflection curve of the double crystal X-ray diffraction spectra is 110 arc sec for a 12 μm thick layer. We have investigated the influence of the substrate temperature and of the arsine molar fraction on the residual carrier concentration of layers grown side by side on GaAs and on InP. The GaAs layers grown on InP are much more compensated than the layers grown on GaAs, indicating a higher incorporation of impurities. On MESFETs grown on InP, gm = 200mS/mm with Fmax higher than 30 GHz. On doped-channel MIS-like FETs on InP, we have measured gm = 145mS/mm.

  20. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    Science.gov (United States)

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure.

  1. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

    Science.gov (United States)

    Chou, C. Y.; Torfi, A.; Wang, W. I.

    2013-10-01

    GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

  2. A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor;

    2008-01-01

    The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor...

  3. Modeling, design, fabrication, and testing of InP Gunn devices in the D-band (110 GHz - 170 GHz)

    Science.gov (United States)

    Kamoua, R.; Eisele, H.; East, J. R.; Haddad, G. I.; Munns, G.; Sherwin, M.

    1992-01-01

    The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.

  4. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel;

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...

  5. Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke

    2013-01-01

    In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can be ...

  6. 1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC).

    Science.gov (United States)

    Evans, P; Fisher, M; Malendevich, R; James, A; Goldfarb, G; Vallaitis, T; Kato, M; Samra, P; Corzine, S; Strzelecka, E; Studenkov, P; Salvatore, R; Sedgwick, F; Kuntz, M; Lal, V; Lambert, D; Dentai, A; Pavinski, D; Zhang, J; Cornelius, J; Tsai, T; Behnia, B; Bostak, J; Dominic, V; Nilsson, A; Taylor, B; Rahn, J; Sanders, S; Sun, H; Wu, K-T; Pleumeekers, J; Muthiah, R; Missey, M; Schneider, R; Stewart, J; Reffle, M; Butrie, T; Nagarajan, R; Ziari, M; Kish, F; Welch, D

    2011-12-12

    In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

  7. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel;

    2015-01-01

    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  8. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  9. The Incredible Bulk

    CERN Document Server

    Fukushima, Keita; Kumar, Jason; Sandick, Pearl; Yamamoto, Takahiro

    2014-01-01

    Recent experimental results from the LHC have placed strong constraints on the masses of colored superpartners. The MSSM parameter space is also constrained by the measurement of the Higgs boson mass, and the requirement that the relic density of lightest neutralinos be consistent with observations. Although large regions of the MSSM parameter space can be excluded by these combined bounds, leptophilic versions of the MSSM can survive these constraints. In this paper we consider a scenario in which the requirements of minimal flavor violation, vanishing $CP$-violation, and mass universality are relaxed, specifically focusing on scenarios with light sleptons. We find a large region of parameter space, analogous to the original bulk region, for which the lightest neutralino is a thermal relic with an abundance consistent with that of dark matter. We find that these leptophilic models are constrained by measurements of the magnetic and electric dipole moments of the electron and muon, and that these models have ...

  10. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  11. Explosive bulk charge

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Jacob Lee

    2015-04-21

    An explosive bulk charge, including: a first contact surface configured to be selectively disposed substantially adjacent to a structure or material; a second end surface configured to selectively receive a detonator; and a curvilinear side surface joining the first contact surface and the second end surface. The first contact surface, the second end surface, and the curvilinear side surface form a bi-truncated hemispherical structure. The first contact surface, the second end surface, and the curvilinear side surface are formed from an explosive material. Optionally, the first contact surface and the second end surface each have a substantially circular shape. Optionally, the first contact surface and the second end surface consist of planar structures that are aligned substantially parallel or slightly tilted with respect to one another. The curvilinear side surface has one of a smooth curved geometry, an elliptical geometry, and a parabolic geometry.

  12. Formulation of the microbicide INP0341 for in vivo protection against a vaginal challenge by Chlamydia trachomatis.

    Directory of Open Access Journals (Sweden)

    Christian Pedersen

    Full Text Available The salicylidene acylhydrazide (SA compounds have exhibited promising microbicidal properties. Previous reports have shown the SA compounds, using cell cultures, to exhibit activity against Chlamydia trachomatis, herpes simplex virus and HIV-1. In addition, using an animal model of a vaginal infection the SA compound INP0341, when dissolved in a liquid, was able to significantly protect mice from a vaginal infection with C. trachomatis. To expand upon this finding, in this report INP0341 was formulated as a vaginal gel, suitable for use in humans. Gelling agents (polymers with inherent antimicrobial properties were chosen to maximize the total antimicrobial effect of the gel. In vitro formulation work generated a gel with suitable rheology and sustained drug release. A formulation containing 1 mM INP0341, 1.6 wt% Cremophor ELP (solubility enhancer and 1.5 wt% poly(acrylic acid (gelling and antimicrobial agent, was chosen for studies of efficacy and toxicity using a mouse model of a vaginal infection. The gel formulation was able to attenuate a vaginal challenge with C. trachomatis, serovar D. Formulations with and without INP0341 afforded protection, but the inclusion of INP0341 increased the protection. Mouse vaginal tissue treated with the formulation showed no indication of gel toxicity. The lack of toxicity was confirmed by in vitro assays using EpiVaginal tissues, which showed that a 24 h exposure to the gel formulation did not decrease the cell viability or the barrier function of the tissue. Therefore, the gel formulation described here appears to be a promising vaginal microbicide to prevent a C. trachomatis infection with the potential to be expanded to other sexually transmitted diseases.

  13. Fluorescence intermittency in self-assembled InP quantum dots.

    Science.gov (United States)

    Sugisaki, M; Ren, H W; Nishi, K; Masumoto, Y

    2001-05-21

    Fluorescence intermittency in InP self-assembled dots is investigated by means of far field imaging and single dot spectroscopy. Based on our observation that blinking dots are found in the vicinity of scratches and the blinking frequency is drastically enhanced under a near-infrared laser irradiation, we attribute the origin of the fluorescence intermittency to a local electric field due to a carrier trapped at a deep localized center in the Ga0.5In0.5P matrix. The validity of this explanation is confirmed by a thermal activation-type behavior of the switching rate and artificial reproduction of the blinking phenomenon by an external electric field.

  14. Exciton fine structure splitting in InP quantum dots in GaInP.

    Science.gov (United States)

    Ellström, C; Seifert, W; Pryor, C; Samuelson, L; Pistol, M-E

    2007-07-25

    We have investigated the electronic structure of excitons in InP quantum dots in GaInP. The exciton is theoretically expected to have four states. Two of the states are allowed to optically decay to the ground (vacuum) state in the dipole approximation. We see these two lines in photoluminescence (PL) experiments and find that the splitting between the lines (the fine structure splitting) is 150(± 30) µeV. The lines were perpendicularly polarized. We verified that the lines arise from neutral excitons by using correlation spectroscopy. The theoretical calculations show that the polarization of the emission lines are along and perpendicular to the major axis of elongated dots. The fine structure splitting depends on the degree of elongation of the dots and is close to zero for dots of cylindrical symmetry, despite the influence of the piezoelectric polarization, which is included in the calculation.

  15. InP nanowire p-type doping via Zinc indiffusion

    Science.gov (United States)

    Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars

    2016-10-01

    We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350-500 °C for 5-20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm-3 for NWs without post-annealing, and up to 1018 cm-3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

  16. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

    Science.gov (United States)

    Ismaeel Maricar, Mohamed; Khalid, A.; Dunn, G.; Cumming, D.; Oxley, C. H.

    2015-01-01

    An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s-1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s-1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

  17. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  18. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  19. Hole Rashba effect and g-factor in InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X W [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Xia, J B [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

    2007-01-21

    The hole Rashba effect and g-factor in InP nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in Bessel functions. It is well known that the electron Rashba coefficient increases nearly linearly with the electric field. As the Rashba spin splitting is zero at zero k{sub z} (the wave vector along the wire direction), the electron g-factor at k{sub z} = 0 changes little with the electric field. While we find that as the electric field increases, the hole Rashba coefficient increases at first, then decreases. It is noticed that the hole Rashba coefficient is zero at a critical electric field. The hole g-factor at k{sub z} = 0 changes obviously with the electric field.

  20. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India); Rao, G Venugopal [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Amarendra, G [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Abhaya, S [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Sastry, V Sankara [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Nair, K G M [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Ravichandran, V [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India)

    2005-12-21

    Depth resolved positron annihilation measurements were carried out on 85 keV and 1 MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 10{sup 15} cm{sup -2} and coexistence of monovacancies and divacancies for 10{sup 16} cm{sup -2} dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made.

  1. Effect of native oxide mechanical deformation on InP nanoindentation

    Science.gov (United States)

    Almeida, C. M.; Prioli, R.; Ponce, F. A.

    2008-12-01

    Native oxide has been found to have a noticeable effect on the mechanical deformation of InP during nanoindentation. The indentations were performed using spherical diamond tips and the residual impressions were studied by atomic force microscopy. It has been observed that in the early stages of mechanical deformation, plastic flow occurs in the oxide layer while the indium phosphide is still in the elastic regime. The deformed native oxide layer results in a pile-up formation that causes an increase in the contact area between the tip and the surface during the nanoindentation process. This increase in the projected contact area is shown to contribute to the apparent high pressure sustained by the crystal before the onset of plastic deformation. It is also shown that the stress necessary to generate the first dislocations from the crystal surface is ˜3 GPa higher than the stress needed for slip to occur when dislocations are already present in the crystalline structure.

  2. 国外InP HEMT和InP HBT的发展现状及应用%Development and Application of InP HEMT and InP HBT

    Institute of Scientific and Technical Information of China (English)

    姚立华

    2009-01-01

    InP device is the first selection in millimeter wave bands because for its high frequency, high power, low noise figure and radiation hardened. InP HEMT and InP HBT behave excellent performance in military applications, such as satellite and radar. Current development, excellent performances and the main manufacturers of InP HEMT/InP HBT devices and circuits are presented. InP HEMT according to low noise and power is described. Their applications in military are introduced, for instance in T/R module of satellite phase array radar system, receivers in spacecraft and ground based station and communication systems. The development trends are summarized according to the development of InP device and circuits abroad.%在毫米波段,InP基器件由于其具有高频、高功率、低噪声及抗辐射等特点,成为人们的首选,尤其适用于空间应用.InP HEMT和InP HBT已在卫星、雷达等军事应用中表现出了优异的性能.分别介绍了InP HEMT和InP HBT器件及电路的发展现状,现在能达到的最高性能及主要生产公司等,其中InP HEMT又分别按低噪声和功率进行了详细介绍.介绍了它们在军事上的主要应用,以具体的应用实例介绍了在卫星相控阵雷达系统天线中的T/R模块中、航天器和地面站的接收机中、以及雷达和通信系统中的应用情况、达到的性能及可靠性等.并根据国外InP器件和电路的发展现状总结了其未来发展趋势.

  3. Can bulk viscosity drive inflation

    Energy Technology Data Exchange (ETDEWEB)

    Pacher, T.; Stein-Schabes, J.A.; Turner, M.S.

    1987-09-15

    Contrary to other claims, we argue that bulk viscosity associated with the interactions of non- relativistic particles with relativistic particles around the time of the grand unified theory (GUT) phase transition cannot lead to inflation. Simply put, the key ingredient for inflation, negative pressure, cannot arise due to the bulk-viscosity effects of a weakly interacting mixture of relativistic and nonrelativistic particles.

  4. Brane Couplings from Bulk Loops

    OpenAIRE

    Georgi, Howard; Grant, Aaron K.; Hailu, Girma

    2000-01-01

    We compute loop corrections to the effective action of a field theory on a five-dimensional $S_1/Z_2$ orbifold. We find that the quantum loop effects of interactions in the bulk produce infinite contributions that require renormalization by four-dimensional couplings on the orbifold fixed planes. Thus bulk couplings give rise to renormalization group running of brane couplings.

  5. Luminescent InP Quantum Dots with Tunable Emission by Post-Synthetic Modification with Lewis Acids.

    Science.gov (United States)

    Stein, Jennifer L; Mader, Elizabeth A; Cossairt, Brandi M

    2016-04-07

    We demonstrate the ability of M(2+) Lewis acids (M = Cd, Zn) to dramatically enhance the photoluminescence quantum yield (PL QY) of InP quantum dots. The addition of cadmium and zinc is additionally found to red- and blue-shift, respectively, the lowest energy absorption and emission of InP quantum dots while maintaining particle size. This treatment results in a facile strategy to post-synthetically tune the luminescence color in these materials. Optical and structural characterization (XRD, TEM, XAS, ICP) have led us to identify the primary mechanism of PL turn-on as surface passivation of phosphorus dangling bonds, affording PL QYs up to 49% without the growth of a type I shell or the addition of HF. This route to PL enhancement and color tuning may prove useful as a standalone treatment or as a complement to shelling strategies.

  6. Current impulse response of thin InP p+-i-n+ diodes using full band structure Monte Carlo method

    Science.gov (United States)

    You, A. H.; Cheang, P. L.

    2007-02-01

    A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p+-i-n+ diodes with the multiplication region of 0.2μm is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p+-i-n+ diodes with multiplication lengths of 0.05 and 0.2μm using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.

  7. Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

    Institute of Scientific and Technical Information of China (English)

    HUANG Lei; SUN Bo; YAO Jian-quan; WANG Peng

    2008-01-01

    The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied.In collinear phase-matching,the optimum phase-matching wave bands of these two crystals are calculated.The optimum phase-matching wave bands in GaAs and InP are 0.95~1.38 μm and 0.7~0.96 μm respectively.The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed.The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed.It can serve for the following experiments as a theoretical evidence and a reference aswell.

  8. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

    OpenAIRE

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P]...

  9. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    Science.gov (United States)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  10. High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    SHU Yong-chun; PI Biao; LIN Yao-wang; XING Xiao-dong; YAO Jiang-hong; WANG Zhan-guo; XU Jing-jun

    2005-01-01

    Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy (SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonaand growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron served.

  11. Effect of InP Doping on the Phase Transition of Thin GeSbTe Films

    Science.gov (United States)

    Bang, Ki Su; Oh, Yong Jun; Lee, Seung-Yun

    2015-08-01

    We report the crystallization and phase-transition behavior of GeSbTe thin films doped with indium phosphorus (InP). Pure GeSbTe thin films and InP-doped GeSbTe thin films were prepared by use of an rf magnetron sputtering method. After thermal annealing, electrical and optical changes in the thin films were observed. Sheet resistance and reflectance measurements revealed that InP doping suppresses crystallization of GeSbTe. X-ray diffraction analysis confirmed that addition of In and P atoms inhibits the phase transition from face-centered cubic to hexagonal closed-packed. Nucleation of the doped GeSbTe thin films was delayed at an annealing temperature of 100°C; after thermal annealing, neither segregation nor formation of a secondary phase occurred. These results indicate that InP doping improves the amorphous stability of GeSbTe thin films. It is believed this enhanced amorphous stability is a result of the formation of multiple, strong crosslinks by the In and P atoms.

  12. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  13. Surface Dipole Formation and Lowering of the Work Function by Cs Adsorption on InP(100) Surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y.; Liu, Z.; Pianetta, P.

    2007-06-08

    The Cs adsorption on InP(100) surface is studied with Synchrotron Radiation Photoelectron Spectroscopy. The charge transfer from Cs to the InP substrate is observed from the Cs induced In4d and P2p components, and this charge transfer results in surface dipole formation and lowering of the work function. The Cs4d intensity saturates at coverage of one monolayer (ML). However, a break point is observed at 0.5 ML, which coincides with the achievement of the minimum work function. This break point is due to the different vertical placement of the first and the second half monolayer of Cs atoms. Based on this information, a simple bi-layer structure for the Cs layer is presented. This bi-layer structure is consistent with the behavior of the charge transfer from the Cs to the InP substrate at different Cs coverages. This, in turn, explains why the work function decreases to a minimum at 0.5 ML of Cs and remains almost constant beyond this coverage. The depolarization of the surface dipoles is attributed to the saturation of charge transfer to the surface In atoms and the polarization of the Cs atoms in the second half monolayer induced by the positively charged Cs atoms in the first half monolayer.

  14. Can bulk viscosity drive inflation

    Energy Technology Data Exchange (ETDEWEB)

    Pacher, T.; Stein-Schabes, J.A.; Turner, M.S.

    1987-04-01

    Contrary to other claims, we argue that, bulk viscosity associated with the interactions of nonrelativistic particles with relativistic particles around the time of the grand unified theory (GUT) phase transition cannot lead to inflation. Simply put, the key ingredient for inflation, negative pressure, cannot arise due to the bulk viscosity effects of a weakly-interacting mixture of relativistic and nonrelativistic particles. 13 refs., 1 fig.

  15. Aerosol measurements during COPE: composition, size, and sources of CCN and INPs at the interface between marine and terrestrial influences

    Science.gov (United States)

    Taylor, Jonathan W.; Choularton, Thomas W.; Blyth, Alan M.; Flynn, Michael J.; Williams, Paul I.; Young, Gillian; Bower, Keith N.; Crosier, Jonathan; Gallagher, Martin W.; Dorsey, James R.; Liu, Zixia; Rosenberg, Philip D.

    2016-09-01

    Heavy rainfall from convective clouds can lead to devastating flash flooding, and observations of aerosols and clouds are required to improve cloud parameterisations used in precipitation forecasts. We present measurements of boundary layer aerosol concentration, size, and composition from a series of research flights performed over the southwest peninsula of the UK during the COnvective Precipitation Experiment (COPE) of summer 2013. We place emphasis on periods of southwesterly winds, which locally are most conducive to convective cloud formation, when marine air from the Atlantic reached the peninsula. Accumulation-mode aerosol mass loadings were typically 2-3 µg m-3 (corrected to standard cubic metres at 1013.25 hPa and 273.15 K), the majority of which was sulfuric acid over the sea, or ammonium sulfate inland, as terrestrial ammonia sources neutralised the aerosol. The cloud condensation nuclei (CCN) concentrations in these conditions were ˜ 150-280 cm-3 at 0.1 % and 400-500 cm-3 at 0.9 % supersaturation (SST), which are in good agreement with previous Atlantic measurements, and the cloud drop concentrations at cloud base ranged from 100 to 500 cm-3. The concentration of CCN at 0.1 % SST was well correlated with non-sea-salt sulfate, meaning marine sulfate formation was likely the main source of CCN. Marine organic aerosol (OA) had a similar mass spectrum to previous measurements of sea spray OA and was poorly correlated with CCN. In one case study that was significantly different to the rest, polluted anthropogenic emissions from the southern and central UK advected to the peninsula, with significant enhancements of OA, ammonium nitrate and sulfate, and black carbon. The CCN concentrations here were around 6 times higher than in the clean cases, and the cloud drop number concentrations were 3-4 times higher. Sources of ice-nucleating particles (INPs) were assessed by comparing different parameterisations used to predict INP concentrations, using measured

  16. Doping evaluation of InP nanowires for tandem junction solar cells

    Science.gov (United States)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  17. Low-temperature damage formation in ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany); Stonert, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Turos, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Wesch, W. [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)

    2013-07-15

    Damage formation in ion implanted InP is studied by quasi–in situ Rutherford backscattering spectrometry (RBS) in channelling configuration. Subsequent implantation steps are performed at 15 K each followed by immediate RBS analysis without changing the environment or the temperature of the sample. 30 keV He, 150 keV N and 350 keV Ca ions were applied. The depth distribution of damage is in good agreement with that calculated with the SRIM code. The evolution of damage at the maximum of the distribution as a function of the ion fluence is described assuming damage formation within single ion impacts and stimulated growth of damage when the collision cascades start to overlap with cross sections σ{sub d} and σ{sub g}, respectively. These cross sections are found to depend on the primary energies deposited in the displacement of lattice atoms and in electronic interactions calculated with the SRIM code. The obtained empirical formulas are capable to represent the experimental results for different III–V compounds implanted at 15 K with various ion species.

  18. Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform.

    Science.gov (United States)

    Juvert, Joan; Zhang, Shuailong; Eddie, Iain; Mitchell, Colin J; Reed, Graham T; Wilkinson, James S; Kelly, Anthony; Neale, Steven L

    2016-08-08

    The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4° and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular.

  19. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    Science.gov (United States)

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  20. A positive feedback loop of p53/miR-19/TP53INP1 modulates pancreatic cancer cell proliferation and apoptosis.

    Science.gov (United States)

    Wang, Xiaofang; Wang, Lei; Mo, Qingjiang; Jia, Ankui; Dong, Yuqian; Wang, Guoqiang

    2016-01-01

    Pancreatic cancer is a common malignancy whose prognosis and treatment of pancreatic cancer is extremely poor, with only 20% of patients reaching two years of survival. Previous findings have shown that the tumor suppressor p53 is involved in the development of various types of cancer, including pancreatic cancer. Additionally, p53 is able to activate TP53INP1 transcription by regulating several phenotypes of cancer cells. Using gain and loss-of-function assays, the aim of the present study was to examine the relationships between miR-19a/b and cancer development as well as potential underlying mechanisms. The results showed that miR-19a/b identified a positive feedback regulation of p53/TP53INP1 axis. Additionally, p53 upregulated the TP53INP1 level in pancreatic cancer cells. However, overexpressed miR-19a/b partially restored the TP53 function in the pancreatic cancer cells while miR-19a/b downregulated TP53INP1 protein by directly targeting 3'UTR of its mRNA at the post-transcriptional level. In addition, the patient tissues identified that the miR-19a/b level in pancreatic cancer tissues was conversely correlated with TP53 and TP53INP1 expression. The results provide evidence for revealing the molecular mechanism involved in the development of pancreatic cancer and may be useful in the identification of new therapeutic targets for pancreatic cancer.

  1. Looking for a bulk point

    CERN Document Server

    Maldacena, Juan; Zhiboedov, Alexander

    2015-01-01

    We consider Lorentzian correlators of local operators. In perturbation theory, singularities occur when we can draw a position-space Landau diagram with null lines. In theories with gravity duals, we can also draw Landau diagrams in the bulk. We argue that certain singularities can arise only from bulk diagrams, not from boundary diagrams. As has been previously observed, these singularities are a clear diagnostic of bulk locality. We analyze some properties of these perturbative singularities and discuss their relation to the OPE and the dimensions of double-trace operators. In the exact nonperturbative theory, we expect no singularity at these locations. We prove this statement in 1+1 dimensions by CFT methods.

  2. Yield Improvement and Advanced Defect Control——Driving Forces for Modeling of Bulk Crystal Growth

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Yield improvement and advanced defect control can be identified as the driving forces for modeling of industrial bulk crystal growth. Yield improvement is mainly achieved by upscaling of the whole crystal growth apparatus and increased processing windows with more tolerances for parameter variations. Advanced defect control means on one hand a reduction of the number of deficient crystal defects and on the other hand the formation of beneficial crystal defects with a uniform distribution and well defined concentrations in the whole crystal. This "defect engineering" relates to the whole crystal growth process as well as the following cooling and optional annealing processes, respectively. These topics were illustrated in the paper by examples of modeling and experimental results of bulk growth of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP) and calcium fluoride (CaF2). These examples also involve the state of the art of modeling of the most important melt growth techniques, crystal pulling (Czochralski methods) and vertical gradient freeze (Bridgman-type methods).

  3. Bulk nano-crystalline alloys

    OpenAIRE

    T.-S. Chin; Lin, C. Y.; Lee, M.C.; R.T. Huang; S. M. Huang

    2009-01-01

    Bulk metallic glasses (BMGs) Fe–B–Y–Nb–Cu, 2 mm in diameter, were successfully annealed to become bulk nano-crystalline alloys (BNCAs) with α-Fe crystallite 11–13 nm in size. A ‘crystallization-and-stop’ model was proposed to explain this behavior. Following this model, alloy-design criteria were elucidated and confirmed successful on another Fe-based BMG Fe–B–Si–Nb–Cu, 1 mm in diameter, with crystallite sizes 10–40 nm. It was concluded that BNCAs can be designed in general by the proposed cr...

  4. InP Gunn diodes with a cathode contact injecting hot electrons. Part 1. Interactions between phases in the cathode contacts

    Directory of Open Access Journals (Sweden)

    Boltovets N. S.

    2010-10-01

    Full Text Available The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP structure with Au–TiBx–Au–Ge contact metallization in the –40...+60 °С temperature range. It is shown that ohmic contacts to InP layer are formed as a result of diffusion of Ge and Au atoms deep inside the layer. The output parameters of Gunn diodes with Au–TiBx–Au–Ge cathode contacts agree with the data obtained for InP Gunn diodes made with the use of more complicated technology.

  5. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  6. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  7. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja

    2009-01-01

    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise i...

  8. The Universe With Bulk Viscosity

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Exact solutions for a model with variable G, A and bulk viscosity areobtained. Inflationary solutions with constant (de Sitter-type) and variable energydensity are found. An expanding anisotropic universe is found to isotropize duringits expansion but a static universe cannot isotropize. The gravitational constant isfound to increase with time and the cosmological constant decreases with time asAo∝t-2.

  9. Transport phenomena in a high pressure crystal growth system: In situ synthesis for InP melt

    Science.gov (United States)

    Zhang, H.; Prasad, V.; Anselmo, A. P.; Bliss, D. F.; Iseler, G.

    1997-06-01

    The physical phenomena underlying the "one-step" in situ synthesis and high pressure growth of indium phosphide crystals are complex. A high resolution computer model based on multizone adaptive grid generation and curvilinear finite volume discretization is used to predict the flow and temperature fields during the synthesis of the InP melt. Simulations are performed for a range of parameters, including Grashof number, crucible rotation, and location of the injector. These parameters affect the gas flow in a high pressure liquid-encapsulated Czochralski (HPLEC) furnace significantly, and have a strong influence on the melt synthesis and its control.

  10. Determination of the complex linear electro-optic coefficient of GaAs and InP

    Energy Technology Data Exchange (ETDEWEB)

    Pristovsek, Markus [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-08-15

    The complex linear electro-optic coefficient d{sub 41} was determined for the first time above the fundamental band gap of GaAs and InP by measuring the doping induced band bending of several oxidized samples in reflectance anisotropy spectroscopy. From the real and imaginary part of the change of the spectra for different carrier concentrations the spectral change of d{sub 41} was calculated. This is the first determination of the imaginary part Im(d{sub 41}). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Morphology, luminescence, and electrical resistance response to H 2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    Science.gov (United States)

    Volciuc, O.; Monaico, E.; Enachi, M.; Ursaki, V. V.; Pavlidis, D.; Popa, V.; Tiginyanu, I. M.

    2010-11-01

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 × 10 17 cm -3 and 1 × 10 18 cm -3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H 2 and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  12. Morphology, luminescence, and electrical resistance response to H{sub 2} and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Volciuc, O.; Monaico, E.; Enachi, M. [National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of); Ursaki, V.V., E-mail: ursaki@yahoo.com [Institute of Applied Physics, Academy of Sciences of Moldova, Academy str. 5, Chisinau 2028 (Moldova, Republic of); Pavlidis, D. [Fachgebiet fuer Hoechstfrequenzelektronik, Technische Universitaet Darmstadt, Merckstrasse 25, Darmstadt 64283 (Germany); Popa, V. [National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of); Fachgebiet fuer Hoechstfrequenzelektronik, Technische Universitaet Darmstadt, Merckstrasse 25, Darmstadt 64283 (Germany); Tiginyanu, I.M. [National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of); Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Academy str. 3/3, Chisinau 2028 (Moldova, Republic of)

    2010-11-15

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 x 10{sup 17} cm{sup -3} and 1 x 10{sup 18} cm{sup -3} in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H{sub 2} and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  13. Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

    Science.gov (United States)

    Ringel, S. A.; Chatterjee, B.

    2004-01-01

    Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

  14. Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam

    Science.gov (United States)

    Ribeiro-Andrade, R.; Malachias, A.; Miquita, D. R.; Vasconcelos, T. L.; Kawabata, R.; Pires, M. P.; Souza, P. L.; Rodrigues, W. N.

    2017-03-01

    This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from 1015 to 1016 Ga+/cm2 were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.

  15. Vertical and Smooth, etching of InP by Cl2/CH4/Ar Inductively Coupled Plasma at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    孙长征; 周进波; 熊兵; 王健; 罗毅

    2003-01-01

    We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.

  16. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    Science.gov (United States)

    Kim, Hogyoung; Cho, Yunae; Jung, Chan Yeong; Kim, Se Hyun; Kim, Dong-Wook

    2015-12-01

    Using current-voltage (I-V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100-300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm-2 K-2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole-Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample.

  17. Bulk Superconductors in Mobile Application

    Science.gov (United States)

    Werfel, F. N.; Delor, U. Floegel-; Rothfeld, R.; Riedel, T.; Wippich, D.; Goebel, B.; Schirrmeister, P.

    We investigate and review concepts of multi - seeded REBCO bulk superconductors in mobile application. ATZ's compact HTS bulk magnets can trap routinely 1 T@77 K. Except of magnetization, flux creep and hysteresis, industrial - like properties as compactness, power density, and robustness are of major device interest if mobility and light-weight construction is in focus. For mobile application in levitated trains or demonstrator magnets we examine the performance of on-board cryogenics either by LN2 or cryo-cooler application. The mechanical, electric and thermodynamical requirements of compact vacuum cryostats for Maglev train operation were studied systematically. More than 30 units are manufactured and tested. The attractive load to weight ratio is more than 10 and favours group module device constructions up to 5 t load on permanent magnet (PM) track. A transportable and compact YBCO bulk magnet cooled with in-situ 4 Watt Stirling cryo-cooler for 50 - 80 K operation is investigated. Low cooling power and effective HTS cold mass drives the system construction to a minimum - thermal loss and light-weight design.

  18. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results.

    Science.gov (United States)

    Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro

    2014-05-16

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  19. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin, E-mail: weix@red.semi.ac.cn [Nano-optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jietao [School of Physics and Optoelectronic Engineering, Xidian University, Xi' an, Shannxi 710071 (China)

    2015-05-28

    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.

  20. Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters.

    Science.gov (United States)

    Xie, Renguo; Peng, Xiaogang

    2009-08-05

    Efficient Cu-doped InP quantum dots (Cu:InP d-dots) emitters were successfully synthesized by epitaxial growth of a ZnSe diffusion barrier for the dopants. The Cu dopant emission of the Cu:InP/ZnSe core/shell d-dots covered the important red and near-infrared (NIR) window for biomedical applicaitons, from 630 to 1100 nm, by varying the size of the InP host nanocrystals. These new d-dots emitters not only compensate for the emission wavelength of the existing noncadmium d-dots emitters, Cu- and Mn-doped ZnSe d-dots (450-610 nm), but also offer a complete series of efficient nanocrystal emitters based on InP nanocrystals. The one-pot synthetic scheme for the formation of Cu:InP/ZnSe core/shell d-dots was successfully established by systematically studying the doping process, the dopant concentration-dependent photophysical properties, and the dopant diffusion during shell epitaxy, etc. Complete elimination of InP bandgap emission and efficient pure dopant emission (with photoluminescence quantum yield as high as between 35-40%) of the core/shell d-dots were achieved by optimizing the final doping level and the diffusion barrier thickness.

  1. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.;

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  2. Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2014-01-01

    Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...

  3. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Science.gov (United States)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  4. Photoreflectance and DLTS evaluation of plasma-induced damage in GaAs and InP prior to solar cell fabrication

    Science.gov (United States)

    He, L.; Anderson, W. A.

    1991-01-01

    The effect is considered of plasma etching on both GaAs and InP followed by damage removal using rapid thermal annealing (RTA). Effects of these processes were studied by photoreflectance spectroscopy (PR) and deep level transient spectroscopy (DLTS). These techniques are useful in evaluation of wafers prior to and effects of plasma processing during solar cell fabrication.

  5. A physical based equivalent circuit modeling approach for ballasted InP DHBT multi-finger devices at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Midili, Virginio; Squartecchia, Michele; Johansen, Tom Keinicke

    2016-01-01

    Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency behavior of the device. This paper presents two distinct modeling approaches: one based on EM simulations and one based on a physical equival...

  6. Bulk Moisture and Salinity Sensor

    Science.gov (United States)

    Nurge, Mark; Monje, Oscar; Prenger, Jessica; Catechis, John

    2013-01-01

    Measurement and feedback control of nutrient solutions in plant root zones is critical to the development of healthy plants in both terrestrial and reduced-gravity environments. In addition to the water content, the amount of fertilizer in the nutrient solution is important to plant health. This typically requires a separate set of sensors to accomplish. A combination bulk moisture and salinity sensor has been designed, built, and tested with different nutrient solutions in several substrates. The substrates include glass beads, a clay-like substrate, and a nutrient-enriched substrate with the presence of plant roots. By measuring two key parameters, the sensor is able to monitor both the volumetric water content and salinity of the nutrient solution in bulk media. Many commercially available moisture sensors are point sensors, making localized measurements over a small volume at the point of insertion. Consequently, they are more prone to suffer from interferences with air bubbles, contact area of media, and root growth. This makes it difficult to get an accurate representation of true moisture content and distribution in the bulk media. Additionally, a network of point sensors is required, increasing the cabling, data acquisition, and calibration requirements. measure the dielectric properties of a material in the annular space of the vessel. Because the pore water in the media often has high salinity, a method to measure the media moisture content and salinity simultaneously was devised. Characterization of the frequency response for capacitance and conductance across the electrodes was completed for 2-mm glass bead media, 1- to 2-mm Turface (a clay like media), and 1- to 2-mm fertilized Turface with the presence of root mass. These measurements were then used to find empirical relationships among capacitance (C), the dissipation factor (D), the volumetric water content, and the pore water salinity.

  7. Toughness of Bulk Metallic Glasses

    Directory of Open Access Journals (Sweden)

    Shantanu V. Madge

    2015-07-01

    Full Text Available Bulk metallic glasses (BMGs have desirable properties like high strength and low modulus, but their toughness can show much variation, depending on the kind of test as well as alloy chemistry. This article reviews the type of toughness tests commonly performed and the factors influencing the data obtained. It appears that even the less-tough metallic glasses are tougher than oxide glasses. The current theories describing the links between toughness and material parameters, including elastic constants and alloy chemistry (ordering in the glass, are discussed. Based on the current literature, a few important issues for further work are identified.

  8. SHMUTZ & PROTON-DIAMANT H + Irradiated/Written-Hyper/Super-conductivity(HC/SC) Precognizance/Early Experiments Connections: Wet-Graphite Room-Tc & Actualized MgB2 High-Tc: Connection to Mechanical Bulk-Moduli/Hardness: Diamond Hydrocarbon-Filaments, Disorder, Nano-Powders:C,Bi,TiB2,TiC

    Science.gov (United States)

    Wunderman, Irwin; Siegel, Edward Carl-Ludwig; Lewis, Thomas; Young, Frederic; Smith, Adolph; Dresschhoff-Zeller, Gieselle

    2013-03-01

    SHMUTZ: ``wet-graphite''Scheike-....[Adv.Mtls.(7/16/12)]hyper/super-SCHMUTZ-conductor(S!!!) = ``wet''(?)-``graphite''(?) = ``graphene''(?) = water(?) = hydrogen(?) =ultra-heavy proton-bands(???) = ...(???) claimed room/high-Tc/high-Jc superconductOR ``p''-``wave''/ BAND(!!!) superconductIVITY and actualized/ instantiated MgB2 high-Tc superconductors and their BCS- superconductivity: Tc Siegel[ICMAO(77);JMMM 7,190(78)] connection to SiegelJ.Nonxline-Sol.40,453(80)] disorder/amorphous-superconductivity in nano-powders mechanical bulk/shear(?)-moduli/hardness: proton-irradiated diamond, powders TiB2, TiC,{Siegel[Semis. & Insuls.5:39,47, 62 (79)])-...``VS''/concommitance with Siegel[Phys.Stat.Sol.(a)11,45(72)]-Dempsey [Phil.Mag. 8,86,285(63)]-Overhauser-(Little!!!)-Seitz-Smith-Zeller-Dreschoff-Antonoff-Young-...proton-``irradiated''/ implanted/ thermalized-in-(optimal: BOTH heat-capacity/heat-sink & insulator/maximal dielectric-constant) diamond: ``VS'' ``hambergite-borate-mineral transformable to Overhauser optimal-high-Tc-LiBD2 in Overhauser-(NW-periodic-table)-Land: CO2/CH4-ETERNAL-sequestration by-product: WATER!!!: physics lessons from

  9. Comparisons of Accurate Electronic, Transport, and Bulk Properties of XP (X = B, Al, Ga, In)

    Science.gov (United States)

    Malozovsky, Yuriy; Ejembi, John; Saliev, Azizjon; Franklin, Lashounda; Bagayoko, Diola

    We present comparisons of results from ab-initio,self-consistent local density approximation (LDA) calculations of accurate, electronic and related properties of zinc blende XP (X =B, Al, Ga, In) phosphides. We implemented the linear combination of atomic orbitals following the Bagayoko, Zhao, and Williams (BZW) method as enhanced by Ekuma and Franklin (BZW-EF). Consequently, our results have the full physical content of DFT and agree very well with corresponding experimental ones [AIP Advances, 4, 127104 (2014)]. Our calculated, indirect band gap of 2.02 eV for BP, 2.56 eV for AlP, and of 2.29 eV for GaP, from Γ to X-point, are in excellent agreement with experimental values. Our calculated direct band gap of 1.43 eV, at Γ, for InP is also in an excellent agreement with experimental value. We discuss calculated electron and hole effective masses, total (DOS) and partial (pDOS) densities of states, and the bulk modulus of these phosphides. Acknowledgments: NSF and the Louisiana Board of Regents, LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, DOE - National, Nuclear Security Administration (NNSA) (Award Nos. DE-NA0001861 and DE- NA0002630), LaSPACE, and LONI-SUBR.

  10. Handling of bulk solids theory and practice

    CERN Document Server

    Shamlou, P A

    1990-01-01

    Handling of Bulk Solids provides a comprehensive discussion of the field of solids flow and handling in the process industries. Presentation of the subject follows classical lines of separate discussions for each topic, so each chapter is self-contained and can be read on its own. Topics discussed include bulk solids flow and handling properties; pressure profiles in bulk solids storage vessels; the design of storage silos for reliable discharge of bulk materials; gravity flow of particulate materials from storage vessels; pneumatic transportation of bulk solids; and the hazards of solid-mater

  11. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect

    Institute of Scientific and Technical Information of China (English)

    GE Ji; JIN Zhi; SU Yong-Bo; CHENG Wei; WANG Xian-Wai; CHEN Gao-Peng; LIU Xin-Yu

    2009-01-01

    We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As a result, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.

  12. High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W

    Science.gov (United States)

    Schwarzbäck, T.; Bek, R.; Hargart, F.; Kessler, C. A.; Kahle, H.; Koroknay, E.; Jetter, M.; Michler, P.

    2013-03-01

    We demonstrate an optically pumped semiconductor disk laser (OP-SDL) using InP quantum dots (QDs) as active material fabricated by metal-organic vapor-phase epitaxy. The QDs are grown within [(Al0.1Ga0.9)0.52In0.48]0.5P0.5 (abbr. Al0.1GaInP) barriers in order to achieve an emission wavelength around 655 nm. We present optical investigations of the active region showing typical QD behavior like blue shift with increasing excitation power and single emission lines, which show anti-bunching in an intensity auto-correlation measurement. We report maximum output powers of the OP-SDL of 1.39 W at low emission wavelength of ˜654 nm with a slope efficiency of ηdiff=25.4 %.

  13. Strong mode coupling in InP quantum dot-based GaInP microdisk cavity dimers

    Science.gov (United States)

    Witzany, M.; Liu, T.-L.; Shim, J.-B.; Hargart, F.; Koroknay, E.; Schulz, W.-M.; Jetter, M.; Hu, E.; Wiersig, J.; Michler, P.

    2013-01-01

    We report on strong mode coupling in closely spaced GaInP microdisk dimer structures including InP quantum dots as the active medium. Using electron beam lithography and a combination of dry- and wet-etch processes, dimers with inter-disk separations down to d < 100 nm have been fabricated. Applying a photo-thermal heating scheme, we overcome the spectral mode detuning due to the size mismatch between the two disks forming the dimer. We observe signatures of mode coupling in the corresponding photoluminescence spectra with coupling energies of up to 0.66 MeV. With the aid of a numerical analysis, we specify the geometrical and physical factors of the microdisk dimer precisely, and reproduce its spectrum with good agreement.

  14. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

    Science.gov (United States)

    Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, Longfei; Smalbrugge, Barry; Geluk, Erik Jan; Smit, Meint; van der Tol, Jos

    2014-03-15

    In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

  15. Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

    Science.gov (United States)

    Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

    2012-12-17

    A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

  16. C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate

    Science.gov (United States)

    Limeng, Zhang; Dan, Lu; Zhaosong, Li; Biwei, Pan; Lingjuan, Zhao

    2016-12-01

    The design, fabrication and characterization of a fundamental/first-order mode converter based on multimode interference coupler on InP substrate were reported. Detailed optimization of the device parameters were investigated using 3D beam propagation method. In the experiments, the fabricated mode converter realized mode conversion from the fundamental mode to the first-order mode in the wavelength range of 1530-1565 nm with excess loss less than 3 dB. Moreover, LP01 and LP11 fiber modes were successfully excited from a few-mode fiber by using the device. This InP-based mode converter can be a possible candidate for integrated transceivers for future mode-division multiplexing system. Project supported by the National Basic Research Program of China (No. 2014CB340102) and in part by the National Natural Science Foundation of China (Nos. 61274045, 61335009).

  17. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  18. Nanofluidics, from bulk to interfaces.

    Science.gov (United States)

    Bocquet, Lydéric; Charlaix, Elisabeth

    2010-03-01

    Nanofluidics has emerged recently in the footsteps of microfluidics, following the quest for scale reduction inherent to nanotechnologies. By definition, nanofluidics explores transport phenomena of fluids at nanometer scales. Why is the nanometer scale specific? What fluid properties are probed at nanometric scales? In other words, why does 'nanofluidics' deserve its own brand name? In this critical review, we will explore the vast manifold of length scales emerging for fluid behavior at the nanoscale, as well as the associated mechanisms and corresponding applications. We will in particular explore the interplay between bulk and interface phenomena. The limit of validity of the continuum approaches will be discussed, as well as the numerous surface induced effects occurring at these scales, from hydrodynamic slippage to the various electro-kinetic phenomena originating from the couplings between hydrodynamics and electrostatics. An enlightening analogy between ion transport in nanochannels and transport in doped semi-conductors will be discussed (156 references).

  19. New fermions in the bulk

    CERN Document Server

    de Brito, K P S

    2016-01-01

    Spinor fields on 5-dimensional Lorentzian manifolds are classified, according to the geometric Fierz identities that involve their bilinear covariants. Based upon this classification that generalises the celebrated 4-dimensional Lounesto classification of spinor fields, new non-trivial classes of 5-dimensional spinor fields are, hence, found, with important potential applications regarding bulk fermions and their subsequent localisation on brane-worlds. In addition, quaternionic bilinear covariants are used to derive the quaternionic spin density, through the truncated exterior bundle. In order to accomplish a realisation of these new spinors, a Killing vector field is constructed on the horizon of 5-dimensional Kerr black holes. This Killing vector field is shown to reach the time-like Killing vector field at the spatial infinity, through a current 1-form density, constructed with the derived new spinor fields. The current density is, moreover, expressed as the f\\"unfbein components, assuming a condensed for...

  20. New fermions in the bulk

    Science.gov (United States)

    de Brito, K. P. S.; da Rocha, Roldão

    2016-10-01

    The spinor fields on 5-dimensional Lorentzian manifolds are classified according to the geometric Fierz identities, which involve their bilinear covariants. Based upon this classification, which generalises the celebrated 4-dimensional Lounesto classification of spinor fields, new non-trivial classes of 5-dimensional spinor fields are hence found, with important potential applications regarding bulk fermions and their subsequent localisation on brane-worlds. In addition, quaternionic bilinear covariants are used to derive the quaternionic spin density through the truncated exterior bundle. In order to accomplish the realisation of these new spinors, a Killing vector field is constructed on the horizon of a 5-dimensional Kerr black hole. This Killing vector field is shown to reach the time-like Killing vector field at spatial infinity through a current 1-form density, constructed with the new derived spinor fields. The current density is, moreover, expressed as the fünfbein component, assuming a condensed form.

  1. Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

  2. Tidal and subtidal flow patterns o a tropical continental shelf semi-insulated by coral reefs

    NARCIS (Netherlands)

    Tarya, A.; Hoitink, A.J.F.; Vegt, van der M.

    2010-01-01

    The present study sets out to describe the tidal and subtidal water motion at the Berau coastal shelf, which represents a tropical continental shelf area of variable width hosting a complex of barrier reefs along its oceanic edge. Moored and shipboard measurements on currents and turbulence were mad

  3. Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch

    Institute of Scientific and Technical Information of China (English)

    施卫; 马湘蓉

    2011-01-01

    Unique experimental phenomena are discovered in a large gap semiinsulating(SI)GaAs photoconductive semiconductor switch(PCSS)and the peculiar transmission characteristics are exhibited in the experiment.The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS.By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS,a detailed statistical analysis and theoretical explanations are expounded.The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation(LSA)mode when the conditions of 5 × 104 s·cm-3 ≤ no/f ≤ 3 × 105 s.cm-3 and noL ≥ 1013 cm-2 must be met in the switch,with no being carrier concentration and f the frequency.The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in)behavior at high bias voltage,so the withstand voltage and service life for PCSS are improved.%Unique experimental phenomena are discovered in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch (PCSS) and the peculiar transmission characteristics are exhibited in the experiment. The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS. By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS, a detailed statistical analysis and theoretical explanations are expounded. The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation (LSA) mode when the conditions of 5 x 104 s-cm~3 1013 cm~2 must be met in the switch, with no being carrier concentration and f the frequency. The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in) behavior at high bias voltage, so the withstand voltage and service life for PCSS are improved.

  4. Coupling brane fields to bulk supergravity

    Energy Technology Data Exchange (ETDEWEB)

    Parameswaran, Susha L. [Uppsala Univ. (Sweden). Theoretical Physics; Schmidt, Jonas [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2010-12-15

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  5. Relative entropy equals bulk relative entropy

    CERN Document Server

    Jafferis, Daniel L; Maldacena, Juan; Suh, S Josephine

    2015-01-01

    We consider the gravity dual of the modular Hamiltonian associated to a general subregion of a boundary theory. We use it to argue that the relative entropy of nearby states is given by the relative entropy in the bulk, to leading order in the bulk gravitational coupling. We also argue that the boundary modular flow is dual to the bulk modular flow in the entanglement wedge, with implications for entanglement wedge reconstruction.

  6. Stability Test of White LED with Bilayer Structure of Red InP Quantum Dots and Yellow YAG:Ce3+ Phosphor.

    Science.gov (United States)

    Park, Kwangwon; Deressa, Gemechu; Kim, Daehan; Kim, Jongsu; Kim, Jihoon; Kim, Taehoon

    2016-02-01

    The white-light-emitting diode (white LED), based on the bilayer structure of red InP quantum dots (QDs) with 610 nm peak, and yellow YAG:Ce3+ phosphor with 550 nm peak, were fabricated through a conventional 5050 type LED fabrication process. The white LED exhibited high luminous efficiency of >130 Im/W and high color rendering index of >80 under operating current of 60 mA and color temperature of 5800 K. As an increase of QDs concentrations, the white LED showed higher color rendering index along with lower luminous efficiency, and the energy loss in the reabsorption process between yellow YAG:Ce3+ emission and red QD absorption was observed. As the temperature increases, the x-color coordinates were significantly changed, indicating that the InP QDs still have lower thermal stability. Also our white LED showed about 50% lumen maintenance after 45,000 hours of normal operation.

  7. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

    Science.gov (United States)

    Tayagaki, Takeshi; Sugaya, Takeyoshi

    2016-04-01

    We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔEc ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carrier capture in QDs via Auger relaxation.

  8. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential.

    Science.gov (United States)

    Carrete, J; Longo, R C; Gallego, L J

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity λ of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of λ about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  9. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential

    Energy Technology Data Exchange (ETDEWEB)

    Carrete, J; Longo, R C; Gallego, L J, E-mail: jesus.carrete@usc.es [Departamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela (Spain)

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity {lambda} of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of {lambda} about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  10. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.

    Science.gov (United States)

    Kuyanov, P; LaPierre, R R

    2015-08-07

    InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron microscopy, allowing the development of a model where QD growth occurs by group V desorption from the surrounding substrate surface. Micro-photoluminescence was performed at 10 K showing emission at 1.47-1.49 eV from the InP wurtzite structure, and various emission peaks between 0.93 and 1.33 eV attributed to the QDs. The emission was tuned by the QD composition. The effectiveness of an AlInP passivation shell was demonstrated via an improvement in the photoluminescence intensity. Spectrally-resolved photocurrent measurements at room temperature demonstrated infrared response due to absorption within the QDs. The absorption red-shifted with increasing As composition of the QD.

  11. Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

    Energy Technology Data Exchange (ETDEWEB)

    Hajlaoui, C., E-mail: hajlaouic@yahoo.fr; Pedesseau, L. [Université Européenne de Bretagne (France); Raouafi, F.; Ben Cheikh Larbi, F. [Université de Carthage, Laboratoire de Physico-Chimie, des Microstructures et des Microsystémes, Institut Préparatoire aux Études Scientifiques et Techniques (Tunisia); Even, J.; Jancu, J.-M. [Université Européenne de Bretagne (France)

    2015-08-15

    We report first-principle density functional calculations of the spontaneous polarization, piezoelectric stress constants, and elastic constants for the III–V wurtzite structure semiconductors InAs and InP. Using the density functional theory implemented in the VASP code, we obtain polarization values–0.011 and–0.013 C/m{sup 2}, and piezoelectric constants e{sub 33} (e{sub 31}) equal to 0.091 (–0.026) and 0.012 (–0.081) C/m{sup 2} for structurally relaxed InP and InAs respectively. These values are consistently smaller than those of nitrides. Therefore, we predict a smaller built-in electric field in such structures.

  12. Multiple-Scattering of Near-Edge x-ray Absorption Fine Structure of Sulphur-Passivated InP(100) Surface

    Institute of Scientific and Technical Information of China (English)

    曹松; 唐景昌; 沈少来; 陈更生; 马丹

    2003-01-01

    We use the multiple-scattering cluster method to calculate the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 A and 3.05 A coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

  13. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  14. FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

    Science.gov (United States)

    Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

    2016-01-01

    This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

  15. 33 CFR 127.313 - Bulk storage.

    Science.gov (United States)

    2010-07-01

    ...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The...

  16. Applications of bulk high-temperature superconductors

    Science.gov (United States)

    Hull, J. R.

    The development of high-temperature superconductors (HTS's) can be broadly generalized into thin-film electronics, wire applications, and bulk applications. We consider bulk HTS's to include sintered or crystallized forms that do not take the geometry of filaments or tapes, and we discuss major applications for these materials. For the most part applications may be realized with the HTS's cooled to 77 K, and the properties of the bulk HTS's are often already sufficient for commercial use. A non-exhaustive list of applications for bulk HTS's includes trapped field magnets, hysteresis motors, magnetic shielding, current leads, and magnetic bearings. These applications are briefly discussed in this paper.

  17. The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP

    Directory of Open Access Journals (Sweden)

    Jean C Harmand

    2008-08-01

    Full Text Available The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.

  18. STUDIES ON OPTICAL MODULATION OF III-V GaN AND InP BASED DDR IMPATT DIODE AT SUB-MILLIMETER WAVE FREQUENCY

    Directory of Open Access Journals (Sweden)

    Soumen Banerjee,

    2010-07-01

    Full Text Available The effect of optically illumination of III-V compound semiconductor Indium Phosphide (InP and Wurtzite phase of Gallium Nitride (Wz-GaN or -GaN based Double Drift Impatt diodes at 300 GHz (0.3 THz has been investigated. The composition of photocurrent is altered by shining light on the p+ side and n+ side of the device through optical windows; thereby giving rise to Top Mounted (TM and Flip Chip (FC structures. The current multiplication factors for lectrons (Mn and for holes (Mp are altered to study the effect of leakage current in controlling the dynamic properties of the device. The conversion efficiency and output power of -GaN Impatt at 0.3 THz are 15.47% and 6.23 W respectively at an optimum bias current density of 0.5 x 108 A/m2 while the same parameters for InP Impatt are 18.38% and 2.81 W respectively at an optimum bias current density of 8.0 x 108 A/m2. Under optical illumination of the device, the frequency shift is observed to be more upwards upon lowering of Mpthan lowering of Mn. The frequency chirping in InP and -GaN Impatt are found to be of the order of few GHz, thereby indicating their high photo-sensitiveness at Sub-millimeter or Terahertz domain.

  19. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

    Science.gov (United States)

    García, S.; Íñiguez-de-la-Torre, I.; Pérez, S.; Mateos, J.; González, T.

    2013-08-01

    In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of a sinusoidal AC voltage superimposed to the DC bias and by the simulation of the intrinsic device coupled with the consistent solution of a parallel RLC resonant circuit connected in series. InP diodes with active region about 1 μm offer a conversion efficiency up to 5.5% for frequencies around 225 GHz. By virtue of the larger saturation velocity, for a given diode length, oscillation frequencies in GaN diodes are higher than for InP structures. Current oscillations at frequencies as high as 675 GHz, with 0.1% efficiency, are predicted at the sixth generation band in a 0.9 μm-long GaN diode, corroborating the suitability of GaN to operate near the THz band. At the first generation band, structures with notch, in general, provide lower oscillation frequencies and efficiencies in comparison with the same structures without notch. However, a higher number of generation bands are originated in notched diodes, thus, typically reaching larger frequencies. Self-heating effects reduce the performance, but in GaN diodes the efficiency is not significantly degraded.

  20. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires. PMID:25050088

  1. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-06-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor ( RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  2. Evaluating the Performance of the CPTEC-INPE/FCT-UNESP Troposphere Dynamic Model Using the VRS Concept

    Science.gov (United States)

    Alves, D. B.; Dalbelo, L. F.; Monico, J. F.; Sapucci, L. F.

    2007-05-01

    Nowadays, the use of Zenithal Tropospheric Delay (ZTD) prediction from Numeric Weather Prediction (NWP) models is a good alternative to minimize the effects of the troposphere in the radio frequency signs for real time and/or pos-processed applications. This process is denominated here after ZTD dynamic modeling. In Brazil, the procedure used to compute the ZTD by the NWP model was jointly developed by researchers from UNESP (São Paulo State University) and CPTEC (Center for Weather Forecasting and Climate Studies) of the INPE (National Institute for Space Research). The ZTD values are provided for all South America twice a day with predictions for a period of 66 hours. The database and the quality analysis are available by CPTEC-INPE in http:satelite.cptec.inpe.br/htmldocs/ztd/zenital.htm. In order to test the performance of the ZTD dynamic modeling in positioning applications, some experiments were carried out. Besides, the results obtained with dynamic modeling were compared with those obtained by Hopfield empirical model. These two tropospheric models were used to generate a VRS (Virtual Reference Station). In the VRS concept developed in this research, a reference station is generated near the user using data provided by a reference network station and atmospheric models. Therefore, the VRS data are not provided by a real receiver. But, the idea is that the VRS data resemble as much as possible a real receiver data at the same location. Therefore, the user has the possibility of using the VRS as if it were a real reference station in your proximities, and to accomplish the relative positioning with a single frequency receiver. This method was implemented in an software which has been developed at UNESP. In order to test the discussed method it was accomplished two experiments using data from two different networks: (a) Brazilian Continuous GPS Network (RBMC) and some extra stations; (b) GPS Active Network of West of São Paulo State. Using the first network

  3. Solid State Research

    Science.gov (United States)

    1987-01-07

    Development ; Electro optic Tuning of a Ti:Al2O3 Laser; Er:YAG Laser Development ; Laser Frequency Conversion; Tracer Gas Studies for OMVPE Reactor...Contents: High-Speed Photoconductive Switches Fabricated on Ti Doped Semi-insulating InP; Diode Lasers with Cylindrical Mirror Facets; Ti:Al2O3 Laser

  4. Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film

    Energy Technology Data Exchange (ETDEWEB)

    Klopf, John [Helmholtz Association of German Research Centers, Dresden (Germany)

    2005-10-31

    Advancements in microfabrication techniques and thin film growth have led to complex integrated photonic devices, also known as optoelectronics. The performance of these devices relies upon precise control of the band gap and optical characteristics of the thin film structures, as well as a fundamental understanding of the photoexcited carrier thermalization, relaxation, and recombination processes. An optical pump-probe technique has been developed to measure the transient behavior of these processes on a sub-picosecond timescale. This method relies upon the generation of hot carriers by theabsorption of an intense ultrashort laser pulse (~ 135 fs). The transient changes in reflectance due to the pump pulse excitation are monitored using a weaker probe pulse. Control of the relative time delay between the pump and probe pulses allows for temporal measurements with resolution limited only by the pulse width. The transient change in reflectance is the result of a transient change in the carrier distribution. Observation of the reflectance response of indium phosphide (InP) and gallium arsenide (GaAs) films on a sub-picosecond timescale allows for detailed examination of thermalization and relaxation processes of the excited carriers. Longer timescales (> 100 ps) are useful for correlating the transient reflectance response to slower processes such as the diffusion and recombination of the photoexcited carriers. This research investigates the transient hot carrier processes in several InP and GaAs based films similar to those commonly used in optoelectronics. This technique is especially important as it provides a non-destructive means of evaluating these materials; whereas much of the research performed in this field has relied upon the measurement of transient changes in the transmission of transparent films. The process of preparing films that are transparent renders them unusable in functioning devices. This research should not only extend the understanding of

  5. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    2004-01-01

    The present paper describes the preparation and properties of bulk amorphous quarternary Mg-based alloys and the influence of additional elements on the ability of the alloy to form bulk amorphous. The main goal is to find a Mg-based alloy system which shows both high strength to weight ratio and...

  6. 27 CFR 20.191 - Bulk articles.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of...

  7. Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

    Science.gov (United States)

    Chertouk, Mourad; Boudiaf, A.; Azoulay, Rozette; Clei, A.

    1993-11-01

    The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 1017 cm-3 and 1018 cm-3 channel doping. The excess gate-drain assisted tunneling current in 1018 cm-3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased.

  8. Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

    Directory of Open Access Journals (Sweden)

    Lúcia Helena Ribas Machado

    2010-03-01

    Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

  9. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu; Lin, Mei-Yu

    2013-08-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  10. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu; Lin Mei-Yu

    2013-01-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process.In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study.We use two chlorine-based etchants,one is HCl-based solution (HCl/H3PO4),and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP).The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall,whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall,and the over-etching is tiny on the top and the bottom of mesa.And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min,respectively.The measured data show that the current of Gunn diode by wet etching is lower than that by ICP,and the former has a higher threshold voltage.It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  11. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: christophe.cardinaud@cnrs-imn.fr [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  12. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    Science.gov (United States)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2017-02-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  13. Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

    2016-01-01

    In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output....... The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 d......Bm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz....

  14. 93-133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

    Science.gov (United States)

    Sato, Masaru; Shiba, Shoichi; Matsumura, Hiroshi; Takahashi, Tsuyoshi; Nakasha, Yasuhiro; Suzuki, Toshihide; Hara, Naoki

    2013-04-01

    In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93-133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.

  15. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    Science.gov (United States)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2016-10-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  16. Efficient Coupling of an Antenna-Enhanced nanoLED into an Integrated InP Waveguide.

    Science.gov (United States)

    Eggleston, Michael S; Wu, Ming C

    2015-05-13

    Increasing power consumption in traditional on-chip metal interconnects has made optical links an attractive alternative. However, such a link is currently missing a fast, efficient, nanoscale light-source. Coupling nanoscale optical emitters to optical antennas has been shown to greatly increase their spontaneous emission rate and efficiency. Such a structure would be an ideal emitter for an on-chip optical link. However, there has never been a demonstration of an antenna-enhanced emitter coupled to a low-loss integrated waveguide. In this Letter we demonstrate an optical antenna-enhanced nanoLED coupled to an integrated InP waveguide. The nanoLEDs are comprised of a nanoridge of InGaAsP coupled to a gold antenna that exhibits a 36× enhanced rate of spontaneous emission. Coupling efficiencies as large as 70% are demonstrated into an integrated waveguide. Directional antennas also demonstrate direction emission down one direction of a waveguide with observed front-to-back ratios as high as 3:1.

  17. Superconducting bulk magnets for magnetic levitation systems

    Science.gov (United States)

    Fujimoto, H.; Kamijo, H.

    2000-06-01

    The major applications of high-temperature superconductors have mostly been confined to products in the form of wires and thin films. However, recent developments show that rare-earth REBa 2Cu 3O 7- x and light rare-earth LREBa 2Cu 3O 7- x superconductors prepared by melt processes have a high critical-current density at 77 K and high magnetic fields. These superconductors will promote the application of bulk high-temperature superconductors in high magnetic fields; the superconducting bulk magnet for the Maglev train is one possible application. We investigated the possibility of using bulk magnets in the Maglev system, and examined flux-trapping characteristics of multi-superconducting bulks arranged in array.

  18. Measuring Bulk Flows in Large Scale Surveys

    CERN Document Server

    Feldman, H A; Feldman, Hume A.; Watkins, Richard

    1993-01-01

    We follow a formalism presented by Kaiser to calculate the variance of bulk flows in large scale surveys. We apply the formalism to a mock survey of Abell clusters \\'a la Lauer \\& Postman and find the variance in the expected bulk velocities in a universe with CDM, MDM and IRAS--QDOT power spectra. We calculate the velocity variance as a function of the 1--D velocity dispersion of the clusters and the size of the survey.

  19. Prospects for Detecting a Cosmic Bulk Flow

    Science.gov (United States)

    Rose, Benjamin; Garnavich, Peter M.; Mathews, Grant James

    2015-01-01

    The ΛCDM model is based upon a homogeneous, isotropic space-time leading to uniform expansion with random peculiar velocities caused by local gravitation perturbations. The Cosmic Microwave Background (CMB) radiation evidences a significant dipole moment in the frame of the Local Group. This motion is usually explained with the Local Group's motion relative to the background Hubble expansion. An alternative explanation, however, is that the dipole moment is the result of horizon-scale curvature remaining from the birth of space-time, possibly a result of quantum entanglement with another universe. This would appear as a single velocity (a bulk flow) added to all points in space. These two explanations differ observationally on cosmic distance scales (z > 0.1). There have been many differing attempts to detect a bulk flow, many with no detectable bulk flow but some with a bulk flow velocity as large as 1000 km/s. Here we report on a technique based upon minimizing the scatter around the expected cosine distribution of the Hubble redshift residuals with respect to angular distance on the sky. That is, the algorithm searches for a directional dependence of Hubble residuals. We find results consistent with most other bulk flow detections at z Type Ia Supernovae to be ~0.01, whereas the current error (~0.2.) is more than an order of magnitude too large for the detection of bulk flow beyond z~0.05.

  20. 基于元素磷源的InP量子点的制备%Synthesis of InP Quantum Dots with Elemental Phosphine Source

    Institute of Scientific and Technical Information of China (English)

    王彬彬; 王莉; 汪瑾; 蒋阳

    2012-01-01

    The InP quantum dots (QDs) were synthesized via a colloidal chemical method with white phosphorus (P4), indium acetate (In (Ac)3), stearic acid and 1-octadecene (ODE) as phosphorus source, indium source, surfactant and solvent, respectively. The structure, size and shape of the quantum dots were analyzed by XRD and TEM. The resulting InP QDs were also characterized by UV-Visible absorption and fluorescence spectroscopy. The title material exhibits well-resolved absorption and emission properties. Meanwhile, the InP QDs emit at 415~517 nm in the electromagnetic spectrum showing obvious quantum size effect.%以白磷作为磷源、醋酸铟为铟源、硬脂酸为表面包覆剂、十八烯为溶剂,采用胶体化学法合成了InP量子点.X射线衍射(XRD)和透射电子显微镜(TEM)分析测试显示InP量子点属于立方闪锌矿结构,并且是直径约为5 nm的球状纳米晶.紫外可见光谱和荧光光谱分析表明,InP量子点表现出明显的激子吸收和带边发射特征,荧光发射光谱在415~517 nm范围内连续可调,呈现明显的量子尺寸效应.

  1. 75 FR 64585 - Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes...

    Science.gov (United States)

    2010-10-19

    ... nonsubstantive changes, however, to correct grammar, internal paragraph references, and a temperature conversion... means the English version of the ``International Maritime Solid Bulk Cargoes Code'' published by...

  2. Charge storage properties of InP quantum dots in GaAs metal-oxide-semiconductor based nonvolatile flash memory devices

    Science.gov (United States)

    Kundu, Souvik; Halder, Nripendra N.; Biswas, Pranab; Biswas, D.; Banerji, P.; Mukherjee, Rabibrata; Chakraborty, S.

    2012-11-01

    Metal organic vapor phase epitaxially grown 5 nm InP quantum dots (QDs) were embedded as charge storage elements between high-k control and tunneling dielectric layers in GaAs metal-oxide-semiconductor based nonvolatile memory devices. The QDs trap more electrons resulting in a large memory window (6.3 V) along with low leakage due to Coulomb blockade effect. 16.5% charge loss was found even after 105 s indicating its good charge storing potential. The programming and erasing operations were discussed with proposed band diagram.

  3. Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots

    Science.gov (United States)

    Weidenfeld, S.; Schulz, W.-M.; Kessler, C. A.; Reischle, M.; Eichfelder, M.; Wiesner, M.; Jetter, M.; Michler, P.

    2013-01-01

    In this letter, we report about mode characteristics of microcavity lasers with red-emitting InP quantum dots. The mode spectra and the quality factor of devices with different oxide aperture sizes are analyzed. The lateral mode confinement in the electrical devices is defined via oxide apertures. We found a good agreement between a simple analytical modeling of the mode structure and measurements, which allows to adjust the design of future devices. The quality factors show an analogous behavior as etched micropillars. The enhanced intensity of the higher order modes compared to the fundamental mode can be explained with the current density distribution within the device favoring higher order modes.

  4. Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

    Science.gov (United States)

    Gocalinska, A.; Rubini, S.; Pelucchi, E.

    2016-10-01

    The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.

  5. Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution

    Energy Technology Data Exchange (ETDEWEB)

    Riveros, G.; Guillemoles, J.F.; Lincot, D. [Laboratoire d' Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 (France); Gomez Meier, H. [Instituto de Chimica, Faculdad de Ciencas Basicas y Matematicas, Universidad Catolica de Valparaiso, Avda. Brasil 2950, Casila, Valparaiso (Chile); Froment, M.; Bernard, M.C.; Cortes, R. [Laboratoire de Physique des Liquides et Electrochimie (UPR CNRS 15), Universite Pierre et Marie Curie, 4 place Jussieu, F-75232 Paris Cedex 05 (France)

    2002-09-16

    Epitaxial growth of ZnSe thin films on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (-1.6-1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflective high energy electron diffraction (see Figure for a ZnSe epitaxial layer) and grazing angle X-ray diffraction. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  6. Optical and electrical properties of InP/InGaAs grown selectively on SiO2-masked InP

    Science.gov (United States)

    Wang, Y. L.; Feygenson, A.; Hamm, R. A.; Ritter, D.; Weiner, J. S.; Temkin, H.; Panish, M. B.

    1991-07-01

    Heterostructures of InGaAs/InP have been grown selectively through windows in SiO2-masked InP substrates using metalorganic molecular beam epitaxy. The structures show high cathodoluminescence efficiency for window sizes down to 5 μm. A significant red shift, consistent with compressive lattice strain, and reduced intensity are observed for smaller features. Anomalous growth is observed near the edges of the windows. Selectively grown InGaAs/InP p-n junctions and bipolar transistors exhibit excellent electrical characteristics after removal of 1-2 μm of edge material.

  7. Into the Bulk: A Covariant Approach

    CERN Document Server

    Engelhardt, Netta

    2016-01-01

    I propose a general, covariant way of defining when one region is "deeper in the bulk" than another. This definition is formulated outside of an event horizon (or in the absence thereof) in generic geometries; it may be applied to both points and surfaces, and may be used to compare the depth of bulk points or surfaces relative to a particular boundary subregion or relative to the entire boundary. Using the recently proposed "lightcone cut" formalism, the comparative depth between two bulk points can be determined from the singularity structure of Lorentzian correlators in the dual field theory. I prove that, by this definition, causal wedges of progressively larger regions probe monotonically deeper in the bulk. The definition furthermore matches expectations in pure AdS and in static AdS black holes with isotropic spatial slices, where a well-defined holographic coordinate exists. In terms of holographic RG flow, this new definition of bulk depth makes contact with coarse-graining over both large distances ...

  8. Development of superconductor bulk for superconductor bearing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong (and others)

    2008-08-15

    Current carrying capacity is one of the most important issues in the consideration of superconductor bulk materials for engineering applications. There are numerous applications of Y-Ba-Cu-O (YBCO) bulk superconductors e.g. magnetic levitation train, flywheel energy storage system, levitation transportation, lunar telescope, centrifugal device, magnetic shielding materials, bulk magnets etc. Accordingly, to obtain YBCO materials in the form of large, single crystals without weak-link problem is necessary. A top seeded melt growth (TSMG) process was used to fabricate single crystal YBCO bulk superconductors. The seeded and infiltration growth (IG) technique was also very promising method for the synthesis of large, single-grain YBCO bulk superconductors with good superconducting properties. 5 wt.% Ag doped Y211 green compacts were sintered at 900 .deg. C {approx} 1200 .deg.C and then a single crystal YBCO was fabricated by an infiltration method. A refinement and uniform distribution of the Y211 particles in the Y123 matrix were achieved by sintering the Ag-doped samples. This enhancement of the critical current density was ascribable to a fine dispersion of the Y211 particles, a low porosity and the presence of Ag particles. In addition, we have designed and manufactured large YBCO single domain with levitation force of 10-13 kg/cm{sup 2} using TSMG processing technique.

  9. Bulk fields from the boundary OPE

    CERN Document Server

    Guica, Monica

    2016-01-01

    Previous work has established an equality between the geodesic integral of a free bulk field in AdS and the contribution of the conformal descendants of its dual CFT primary operator to the OPE of two other operators inserted at the endpoints of the geodesic. Working in the context of AdS$_3$/CFT$_2$, we extend this relation to include all $1/N$ corrections to the bulk field obtained by dressing it with i) a $U(1)$ current and ii) the CFT stress tensor, and argue it equals the contribution of the Ka\\v{c}-Moody/the Virasoro block to the respective boundary OPE. This equality holds for a particular framing of the bulk field to the boundary that involves a split Wilson line.

  10. A Diphoton Resonance from Bulk RS

    CERN Document Server

    Csaki, Csaba

    2016-01-01

    Recent LHC data hints at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to Higges and to any other Standard Model particles are so far too low to be detected. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. We argue that if the state is a scalar, some form of sequestering is likely to be necessary to naturally explain the suppressed scalar-Higgs interactions. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  11. Bulk Comptonization by Turbulence in Accretion Disks

    CERN Document Server

    Kaufman, J

    2016-01-01

    Radiation pressure dominated accretion discs around compact objects may have turbulent velocities that greatly exceed the electron thermal velocities within the disc. Bulk Comptonization by the turbulence may therefore dominate over thermal Comptonization in determining the emergent spectrum. Bulk Comptonization by divergenceless turbulence is due to radiation viscous dissipation only. It can be treated as thermal Comptonization by solving the Kompaneets equation with an equivalent "wave" temperature, which is a weighted sum over the power present at each scale in the turbulent cascade. Bulk Comptonization by turbulence with non-zero divergence is due to both pressure work and radiation viscous dissipation. Pressure work has negligible effect on photon spectra in the limit of optically thin turbulence, and in this limit radiation viscous dissipation alone can be treated as thermal Comptonization with a temperature equivalent to the full turbulent power. In the limit of extremely optically thick turbulence, ra...

  12. A diphoton resonance from bulk RS

    Science.gov (United States)

    Csáki, Csaba; Randall, Lisa

    2016-07-01

    Recent LHC data hinted at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to any other Standard Model particles would be too low to be detected so far. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from but close to the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  13. Orchestrating Bulk Data Movement in Grid Environments

    Energy Technology Data Exchange (ETDEWEB)

    Vazhkudai, SS

    2005-01-25

    Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralized data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.

  14. Multiphase composites with extremal bulk modulus

    DEFF Research Database (Denmark)

    Gibiansky, L. V.; Sigmund, Ole

    2000-01-01

    This paper is devoted to the analytical and numerical study of isotropic elastic composites made of three or more isotropic phases. The ranges of their effective bulk and shear moduli are restricted by the Hashin-Shtrikman-Walpole (HSW) bounds. For two-phase composites, these bounds are attainable......, that is, there exist composites with extreme bulk and shear moduli. For multiphase composites, they may or may not be attainable depending on phase moduli and volume fractions. Sufficient conditions of attainability of the bounds and various previously known and new types of optimal composites...... are described. Most of our new results are related to the two-dimensional problem. A numerical topology optimization procedure that solves the inverse homogenization problem is adopted and used to look for two-dimensional three-phase composites with a maximal effective bulk modulus. For the combination...

  15. A stereoscopic look into the bulk

    Science.gov (United States)

    Czech, Bartlomiej; Lamprou, Lampros; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-07-01

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphisminvariant bulk operators. The CFT operators of interest are the "OPE blocks," contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1 /N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields.

  16. Spherically symmetric brane spacetime with bulk gravity

    Science.gov (United States)

    Chakraborty, Sumanta; SenGupta, Soumitra

    2015-01-01

    Introducing term in the five-dimensional bulk action we derive effective Einstein's equation on the brane using Gauss-Codazzi equation. This effective equation is then solved for different conditions on dark radiation and dark pressure to obtain various spherically symmetric solutions. Some of these static spherically symmetric solutions correspond to black hole solutions, with parameters induced from the bulk. Specially, the dark pressure and dark radiation terms (electric part of Weyl curvature) affect the brane spherically symmetric solutions significantly. We have solved for one parameter group of conformal motions where the dark radiation and dark pressure terms are exactly obtained exploiting the corresponding Lie symmetry. Various thermodynamic features of these spherically symmetric space-times are studied, showing existence of second order phase transition. This phenomenon has its origin in the higher curvature term with gravity in the bulk.

  17. Making bulk-conductive glass microchannel plates

    Science.gov (United States)

    Yi, Jay J. L.; Niu, Lihong

    2008-02-01

    The fabrication of microchannel plate (MCP) with bulk-conductive characteristics has been studied. Semiconducting clad glass and leachable core glass were used for drawing fibers and making MCP. Co-axial single fiber was drawn from a platinum double-crucible in an automatic fiberizing system, and the fibers were stacked and redrawn into multifiber by a special gripping mechanism. The multifibers were stacked again and the boule was made and sliced into discs. New MCPs were made after chemically leaching process without the traditional hydrogen firing. It was shown that bulk-conductive glass MCP can operate at higher voltage with lower noise.

  18. Synthesis of Bulk Superconducting Magnesium Diboride

    Directory of Open Access Journals (Sweden)

    Margie Olbinado

    2002-06-01

    Full Text Available Bulk polycrystalline superconducting magnesium diboride, MgB2, samples were successfully prepared via a one-step sintering program at 750°C, in pre Argon with a pressure of 1atm. Both electrical resistivity and magnetic susceptibility measurements confirmed the superconductivity of the material at 39K, with a transition width of 5K. The polycrystalline nature, granular morphology, and composition of the sintered bulk material were confirmed using X-ray diffractometry (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX.

  19. Towards a Reconstruction of General Bulk Metrics

    CERN Document Server

    Engelhardt, Netta

    2016-01-01

    We prove that the metric of a general holographic spacetime can be reconstructed (up to an overall conformal factor) from distinguished spatial slices - "light-cone cuts" - of the conformal boundary. Our prescription is covariant and applies to bulk points in causal contact with the boundary. Furthermore, we describe a procedure for determining the light-cone cuts corresponding to bulk points in the causal wedge of the boundary in terms of the divergences of correlators in the dual field theory. Possible extensions for determining the conformal factor and including the cuts of points outside of the causal wedge are discussed. We also comment on implications for subregion/subregion duality.

  20. Enhanced Photocatalytic Reduction of CO2 to CO through TiO2 Passivation of InP in Ionic Liquids.

    Science.gov (United States)

    Zeng, Guangtong; Qiu, Jing; Hou, Bingya; Shi, Haotian; Lin, Yongjing; Hettick, Mark; Javey, Ali; Cronin, Stephen B

    2015-09-21

    A robust and reliable method for improving the photocatalytic performance of InP, which is one of the best known materials for solar photoconversion (i.e., solar cells). In this article, we report substantial improvements (up to 18×) in the photocatalytic yields for CO2 reduction to CO through the surface passivation of InP with TiO2 deposited by atomic layer deposition (ALD). Here, the main mechanisms of enhancement are the introduction of catalytically active sites and the formation of a pn-junction. Photoelectrochemical reactions were carried out in a nonaqueous solution consisting of ionic liquid, 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]BF4), dissolved in acetonitrile, which enables CO2 reduction with a Faradaic efficiency of 99% at an underpotential of +0.78 V. While the photocatalytic yield increases with the addition of the TiO2 layer, a corresponding drop in the photoluminescence intensity indicates the presence of catalytically active sites, which cause an increase in the electron-hole pair recombination rate. NMR spectra show that the [EMIM](+) ions in solution form an intermediate complex with CO2(-), thus lowering the energy barrier of this reaction.

  1. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima;

    2014-01-01

    . In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer......The development of epitaxial technology for the fabrication of quantum dot (QD) gain material operating in the 1.55 μm wavelength range is a key requirement for the evolvement of telecommunication. High performance QD material demonstrated on GaAs only covers the wavelength region 1-1.35 μm...... lithography. Due to the lower lattice mismatch of InAs/InP compared to InAs/GaAs, InP based QDs have a larger diameter and are shallower compared to GaAs based dots. This shape causes low carrier localization and small energy level separation which leads to a high threshold current, high temperature...

  2. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    Science.gov (United States)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  3. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  4. Fabrication of a P-stabilized InP(0 0 1) surface at low pressure and temperature using t-butylphosphine (TBP)

    Science.gov (United States)

    Fukuda, Yasuo; Kumano, Hiroshi; Nakamura, Hiroyuki

    2004-09-01

    Fabrication of a P-stabilized InP(0 0 1)-(2 × 1) surface at low pressure and temperature using t-butylphosphine (TBP) has been studied. The (2 × 1) surface was fabricated at 260 °C using TBP (5 × 10 -6 Torr) cracked with a hot W-filament although the (2 × 4) structure was not changed by exposing to TBP (5 × 10 -6-1 × 10 -5 Torr) at 260-280 °C without the filament. Mass spectra of the cracked TBP indicate that the relative spectral intensities of P and P 2 are increased by 1.3-1.5 times higher than TBP without the filament, leading to the result that the surface can be fabricated at low pressure and temperature. The formation rate of the (2 × 1) surface by our method is higher by about one order of magnitude even at lower pressure and temperature than the reported ALE method. The (2 × 1) surface is stable at 260-280 °C in an ultrahigh vacuum. This suggests that atomic layer epitaxy (ALE) of InP can be performed at low pressure and temperature using the hot W-filament. The Auger electron spectroscopy (AES) result indicates that carbon contamination does not occur on the surface by adsorption of TBP cracked by the filament.

  5. Aqueous-solution growth of GaP and InP nanowires: a general route to phosphide, oxide, sulfide, and tungstate nanowires.

    Science.gov (United States)

    Xiong, Yujie; Xie, Yi; Li, Zhengquan; Li, Xiaoxu; Gao, Shanmin

    2004-02-06

    A general synthetic route has been developed for the growth of metal phosphide, oxide, sulfide, and tungstate nanowires in aqueous solution. In detail, cetyltrimethylammonium cations (CTA(+)) can be combined with anionic inorganic species along a co-condensation mechanism to form lamellar inorganic-surfactant intercalated mesostructures, which serve as both microreactors and reactants for the growth of nanowires. For example, GaP, InP, gamma-MnO(2), ZnO, SnS(2), ZnS, CdWO(4), and ZnWO(4) nanowires have been grown by this route. To the best of our knowledge, this is the first time that the synthesis of GaP and InP nanowires in aqueous solution has been achieved. This strategy is expected to extend to grow nanowires of other materials in solution or by vapor transport routes, since the nanowire growth of any inorganic materials can be realized by selecting an appropriate reaction and its corresponding lamellar inorganic-surfactant precursors.

  6. THE OPTIMIZATION OF PLUSH YARNS BULKING PROCESS

    Directory of Open Access Journals (Sweden)

    VINEREANU Adam

    2014-05-01

    Full Text Available This paper presents the experiments that were conducted on the installation of continuous bulking and thermofixing “SUPERBA” type TVP-2S for optimization of the plush yarns bulking process. There were considered plush yarns Nm 6.5/2, made of the fibrous blend of 50% indigenous wool sort 41 and 50% PES. In the first stage, it performs a thermal treatment with a turboprevaporizer at a temperature lower than thermofixing temperature, at atmospheric pressure, such that the plush yarns - deposed in a freely state on a belt conveyor - are uniformly bulking and contracting. It was followed the mathematical modeling procedure, working with a factorial program, rotatable central composite type, and two independent variables. After analyzing the parameters that have a direct influence on the bulking degree, there were selected the pre-vaporization temperature (coded x1,oC and the velocity of belt inside pre-vaporizer (coded x 2, m/min. As for the dependent variable, it was chosen the plush yarn diameter (coded y, mm. There were found the coordinates of the optimal point, and then this pair of values was verified in practice. These coordinates are: x1optim= 90oC and x 2optim= 6.5 m/min. The conclusion is that the goal was accomplished: it was obtained a good cover degree f or double-plush carpets by reducing the number of tufts per unit surface.

  7. The Bulk Multicore Architecture for Improved Programmability

    Science.gov (United States)

    2009-12-01

    dependences bundled together. In the Bulk Multi- core, the log must store only the total order of chunk commits, an approach we call DeLorean .13 The...ACM Press, New York, 2007, 69–80. 13. Montesinos, P., Ceze, L., and Torrellas, J. DeLorean : Recording and deterministically replaying shared

  8. Failure by fracture in bulk metal forming

    DEFF Research Database (Denmark)

    Silva, C.M.A.; Alves, Luis M.; Nielsen, Chris Valentin

    2015-01-01

    This paper revisits formability in bulk metal forming in the light of fundamental concepts of plasticity,ductile damage and crack opening modes. It proposes a new test to appraise the accuracy, reliability and validity of fracture loci associated with crack opening by tension and out-of-plane she...

  9. Bulk viscosity effects on ultrasonic thermoacoustic instability

    Science.gov (United States)

    Lin, Jeffrey; Scalo, Carlo; Hesselink, Lambertus

    2016-11-01

    We have carried out unstructured fully-compressible Navier-Stokes simulations of a minimal-unit traveling-wave ultrasonic thermoacoustic device in looped configuration. The model comprises a thermoacoustic stack with 85% porosity and a tapered area change to suppress the fundamental standing-wave mode. A bulk viscosity model, which accounts for vibrational and rotational molecular relaxation effects, is derived and implemented via direct modification of the viscous stress tensor, τij ≡ 2 μSij +λ/2 μ ∂uk/∂xk δij , where the bulk viscosity is defined by μb ≡ λ +2/3 μ . The effective bulk viscosity coefficient accurately captures acoustic absorption from low to high ultrasonic frequencies and matches experimental wave attenuation rates across five decades. Using pressure-based similitude, the model was downscaled from total length L = 2 . 58 m to 0 . 0258 m, corresponding to the frequency range f = 242 - 24200 Hz, revealing the effects of bulk viscosity and direct modification of the thermodynamic pressure. Simulations are carried out to limit cycle and exhibit growth rates consistent with linear stability analyses, based on Rott's theory.

  10. Forming of bulk metallic glass microcomponents

    DEFF Research Database (Denmark)

    Wert, John A.; Thomsen, Christian; Jensen, Rune Debel

    2009-01-01

    The present article considers forward extrusion, closed-die forging and backward extrusion processes for fabrication of individual microcomponents from two bulk metallic glass (BMG) compositions: Mg60Cu30Y10 and Zr44Cu40Ag8Al8. Two types of tooling were used in the present work: relatively massive...

  11. Polymer-fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Janssen, RAJ; Hummelen, JC; Saricifti, NS

    2005-01-01

    Nanostructured phase-separated blends, or bulk heterojunctions, of conjugated Polymers and fullerene derivatives form a very attractive approach to large-area, solid-state organic solar cells.The key feature of these cells is that they combine easy, processing from solution on a variety of substrate

  12. Fluctuating brane in a dilatonic bulk

    CERN Document Server

    Brax, P; Rodríguez-Martinez, M; Brax, Philippe; Langlois, David; Rodriguez-Martinez, Maria

    2003-01-01

    We consider a cosmological brane moving in a static five-dimensional bulk spacetime endowed with a scalar field whose potential is exponential. After studying various cosmological behaviours for the homogeneous background, we investigate the fluctuations of the brane that leave spacetime unaffected. A single mode embodies these fluctuations and obeys a wave equation which we study for bouncing and ever-expanding branes.

  13. Longitudinal bulk a coustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja;

    2009-01-01

    Design, fabrication and characterization, in terms of mass sensitivity, is presented for a polycrystalline silicon longitudinal bulk acoustic cantilever. The device is operated in air at 51 MHz, resulting in a mass sensitivity of 100 HZ/fg (1 fg = 10{su−15 g). The initial characterization...

  14. A Stereoscopic Look into the Bulk

    CERN Document Server

    Czech, Bartlomiej; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-01-01

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphism-invariant bulk operators. The CFT operators of interest are the "OPE blocks," contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space--the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow ...

  15. FAO UN-REDD- INPE Joint Programme on Forest Monitoring Systems based on RS and GIS techniques

    Science.gov (United States)

    Jonckheere, I. G.; FAO UN-REDD MRV Team

    2010-12-01

    Capacity Development and Training for National Forest Monitoring Systems for Reducing Emissions from Deforestation and Forest Degradation in Developing Countries (REDD+) REDD+, which stands for ’Reducing Emissions from Deforestation and Forest Degradation in Developing Countries’ - is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. The UN-REDD Programme, a collaborative partnership between FAO, UNDP and UNEP launched in September 2008, supports countries to develop capacity to REDD+ and to implement a future REDD+ mechanism in a post-2012 climate regime. The programme works at both the national and global scale, through support mechanisms for country-driven REDD strategies and international consensus-building on REDD+ processes. The UN-REDD Programme gathers technical teams from around the world to develop common approaches, analyses and guidelines on issues such as measurement, reporting and verification (MRV) of carbon emissions and flows, remote sensing, and greenhouse gas inventories. Within the partnership, FAO supports countries on technical issues related to forestry and the development of cost effective and credible MRV processes for emission reductions. While at the international level, it fosters improved guidance on MRV approaches, including consensus on principles and guidelines for MRV and training programmes. It provides guidance on how best to design and implement REDD+, to ensure that forests continue to provide multiple benefits for livelihoods and biodiversity to societies while storing carbon at the same time. Other areas of work include national forest assessments and monitoring of in-country policy and institutional change. FAO and INPE (Brazilian Space Agency) have joint forces through a MoU signed last year in Copenhagen. A major joint programme has been agreed upon to set

  16. Integration of bulk piezoelectric materials into microsystems

    Science.gov (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.

  17. 46 CFR 148.04-23 - Unslaked lime in bulk.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 5 2010-10-01 2010-10-01 false Unslaked lime in bulk. 148.04-23 Section 148.04-23... HAZARDOUS MATERIALS IN BULK Special Additional Requirements for Certain Material § 148.04-23 Unslaked lime in bulk. (a) Unslaked lime in bulk must be transported in unmanned, all steel, double-hulled...

  18. Activities report of the National Space Research Institute Plasma Laboratory for the period 1988/1989; Relatorio de atividades do Laboratorio Associado de Plasma do INPE no bienio 88/89

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Gerson Otto

    1990-11-01

    This report describes the activities performed in the period 1988/1989 by the National Space Research Institute (INPE/SCT) Plasma Laboratory (LAP). The report presents the main results in the following research lines: plasma physics, plasma technology, and controlled thermonuclear fusion. (author). 49 figs., 3 tabs.

  19. Towards a reconstruction of general bulk metrics

    Science.gov (United States)

    Engelhardt, Netta; Horowitz, Gary T.

    2017-01-01

    We prove that the metric of a general holographic spacetime can be reconstructed (up to an overall conformal factor) from distinguished spatial slices—‘light-cone cuts’—of the conformal boundary. Our prescription is covariant and applies to bulk points in causal contact with the boundary. Furthermore, we describe a procedure for determining the light-cone cuts corresponding to bulk points in the causal wedge of the boundary in terms of the divergences of correlators in the dual field theory. Possible extensions for determining the conformal factor and including the cuts of points outside of the causal wedge are discussed. We also comment on implications for subregion/subregion duality.

  20. Modeling direct interband tunneling. I. Bulk semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Andrew, E-mail: pandrew@ucla.edu [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); Chui, Chi On [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095 (United States)

    2014-08-07

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  1. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  2. Portable design rules for bulk CMOS

    Science.gov (United States)

    Griswold, T. W.

    1982-01-01

    It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.

  3. Fully antisymmetrised dynamics for bulk fermion systems

    CERN Document Server

    Vantournhout, Klaas

    2011-01-01

    The neutron star's crust and mantel are typical examples of non-uniform bulk systems with spacial localisations. When modelling such systems at low temperatures, as is the case in the crust, one has to work with antisymmetrised many-body states to get the correct fermion behaviour. Fermionic molecular dynamics, which works with an antisymmetrised product of localised wave packets, should be an appropriate choice. Implementing periodic boundary conditions into the fermionic molecular dynamics formalism would allow the study of the neutron star's crust as a bulk quantum system. Unfortunately, the antisymmetrisation is a non-local entanglement which reaches far out of the periodically repeated unit cell. In this proceeding, we give a brief overview how periodic boundary conditions and fermionic molecular dynamics can be combined without truncating the long-range many-body correlation induced by the antisymmetry of the many-body state.

  4. Bulk and shear viscosity in Hagedorn fluid

    Energy Technology Data Exchange (ETDEWEB)

    Tawfik, A.; Wahba, M. [Egyptian Center for Theoretical Physics (ECTP), MTI University, Faculty of Engineering, Cairo (Egypt)

    2010-11-15

    Assuming that the Hagedorn fluid composed of known particles and resonances with masses m <2 GeV obeys the first-order theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium of hadron resonances are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the in-medium thermal effects on bulk and shear viscosity and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equilibrium thermodynamics and the cosmological models, which require thermo- and hydro-dynamics equations of state. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  5. Bulk and Shear Viscosity in Hagedorn Fluid

    CERN Document Server

    Tawfik, A

    2010-01-01

    Assuming that the Hagedorn fluid composed of known particles and resonances with masses $m<2\\,$GeV obeys the {\\it first-order} theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the {\\it in-medium} thermal effects on bulk and shear viscosities and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equlibrium thermodynamics and the cosmological models, which require thermo and hydrodynamics equations of state.

  6. Microfabricated bulk wave acoustic bandgap device

    Science.gov (United States)

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  7. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. On bulk viscosity and moduli decay

    OpenAIRE

    M. Laine

    2010-01-01

    This pedagogically intended lecture, one of four under the header "Basics of thermal QCD", reviews an interesting relationship, originally pointed out by Bodeker, that exists between the bulk viscosity of Yang-Mills theory (of possible relevance to the hydrodynamics of heavy ion collision experiments) and the decay rate of scalar fields coupled very weakly to a heat bath (appearing in some particle physics inspired cosmological scenarios). This topic serves, furthermore, as a platform on whic...

  9. Depleted bulk heterojunction colloidal quantum dot photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Barkhouse, D.A.R. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); IBM Thomas J. Watson Research Center, Kitchawan Road, Yorktown Heights, NY, 10598 (United States); Debnath, Ratan; Kramer, Illan J.; Zhitomirsky, David; Levina, Larissa; Sargent, Edward H. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Pattantyus-Abraham, Andras G. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Quantum Solar Power Corporation, 1055 W. Hastings, Ste. 300, Vancouver, BC, V6E 2E9 (Canada); Etgar, Lioz; Graetzel, Michael [Laboratory for Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)

    2011-07-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Effects of bulk viscosity on cosmological evolution

    CERN Document Server

    Pimentel, L O; Pimentel, L O; Diaz-Rivera, L M

    1994-01-01

    Abstract:The effect of bulk viscisity on the evolution of the homogeneous and isotropic cosmological models is considered. Solutions are found, with a barotropic equation of state, and a viscosity coefficient that is proportional to a power of the energy density of the universe. For flat space, power law expansions, related to extended inflation are found as well as exponential solutions, related to old inflation; also a solution with expansion that is an exponential of an exponential of the time is found.

  11. Raman characterization of bulk ferromagnetic nanostructured graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pardo, Helena, E-mail: hpardo@fq.edu.uy [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Divine Khan, Ngwashi [Mantfort University, Leicester (United Kingdom); Faccio, Ricardo [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Araujo-Moreira, F.M. [Grupo de Materiais e Dispositivos-CMDMC, Departamento de Fisica e Engenharia Fisica, UFSCar, Caixa Postal 676, 13565-905, Sao Carlos SP (Brazil); Fernandez-Werner, Luciana [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay)

    2012-08-15

    Raman spectroscopy was used to characterize bulk ferromagnetic graphite samples prepared by controlled oxidation of commercial pristine graphite powder. The G:D band intensity ratio, the shape and position of the 2D band and the presence of a band around 2950 cm{sup -1} showed a high degree of disorder in the modified graphite sample, with a significant presence of exposed edges of graphitic planes as well as a high degree of attached hydrogen atoms.

  12. Modeling of Microimprinting of Bulk Metallic Glasses

    Institute of Scientific and Technical Information of China (English)

    Ming CHENG; John A. Wert

    2006-01-01

    A finite element analysis (FEA) model has been developed to analyze microimprinting of bulk metallic glasses (BMG) near the glass transition temperature (Tg). The results reveal an approximately universal imprinting response for BMG, independent of surface feature length scale. The scale-independent nature of BMG imprinting derives from the flow characteristics of BMG in the temperature range above Tg. It also shows that the lubrication condition has a mild influence on BMG imprinting in the temperature range above Tg.

  13. Pseudo-Riemannian Universe from Euclidean bulk

    CERN Document Server

    Vasilić, Milovan

    2015-01-01

    I develop the idea that our world is a brane-like object embedded in Euclidean bulk. In its ground state, the brane constituent matter is assumed to be homogeneous and isotropic, and of negligible influence on the bulk geometry. No action functional is initially specified. Instead, the brane dynamics is derived from the universally valid stress-energy conservation equations. The present work studies the cosmology of a $3$-sphere in the $5$-dimensional Euclidean bulk. It is shown that the conventional equation of state $p=\\alpha\\rho$ is universal in the sector of small energy densities, and so is the resulting brane dynamics. The inequality $\\alpha<0$ is found to be a necessary condition for the existence of a stable ground state of the Universe. It is demonstrated that the generic braneworld physics rules out the Big Bang cosmology, and in that matter, any cosmology of finite lifetime. I also demonstrate that stable brane vibrations satisfy Klein-Gordon-like equation with an effective metric of Minkowski s...

  14. Bulk viscous cosmology in early Universe

    Indian Academy of Sciences (India)

    C P Singh

    2008-07-01

    The effect of bulk viscosity on the early evolution of Universe for a spatially homogeneous and isotropic Robertson-Walker model is considered. Einstein's field equations are solved by using `gamma-law' equation of state = ( - 1)ρ, where the adiabatic parameter gamma () depends on the scale factor of the model. The `gamma' function is defined in such a way that it describes a unified solution of early evolution of the Universe for inflationary and radiation-dominated phases. The fluid has only bulk viscous term and the coefficient of bulk viscosity is taken to be proportional to some power function of the energy density. The complete general solutions have been given through three cases. For flat space, power-law as well as exponential solutions are found. The problem of how the introduction of viscosity affects the appearance of singularity, is briefly discussed in particular solutions. The deceleration parameter has a freedom to vary with the scale factor of the model, which describes the accelerating expansion of the Universe.

  15. Bulk Higgs with a heavy diphoton signal

    Science.gov (United States)

    Frank, Mariana; Pourtolami, Nima; Toharia, Manuel

    2017-02-01

    We consider scenarios of warped extra dimensions with all matter fields in the bulk and in which both the hierarchy and the flavor puzzles of the Standard Model are addressed. Inspired by the puzzling excess of diphoton events at 750 GeV reported in the early LHC Run II data (since then understood as a statistical excess), we consider here the general question as to whether the simplest extra-dimensional extension of the Standard Model Higgs sector, i.e., a five-dimensional bulk Higgs doublet, can lead to an intermediate mass resonance (between 500 GeV and 1.5 TeV) of which the first signature would be the presence of diphoton events. This surprising phenomenology can happen if the resonance is the lightest C P -odd state coming from the Higgs sector. No new matter content is required, the only new ingredient being the presence of (positive) brane localized kinetic terms associated to the five-dimensional bulk Higgs (which reduce the mass of the C P -odd states). Production and decay of this resonance can naturally give rise to observable diphoton signals, keeping dijet production under control, with very low ZZ and WW signals and with a highly reduced top pair production in an important region of parameter space. We use the 750 GeV excess as an example case scenario.

  16. Cosmological Implications of QGP Bulk Viscosity

    CERN Document Server

    Anand, Sampurn; Bhatt, Jitesh R

    2016-01-01

    Recent studies of the hot QCD matter indicate that the bulk viscosity ($\\zeta$) of quark-gluon plasma (QGP) rises sharply near the critical point of the QCD phase transition. In this work, we show that such a sharp rise of the bulk viscosity will lead to an effective negative pressure near the critical temperature, $T_{c}$ which in turn drives the Universe to inflate. This inflation has a natural graceful exist when the viscous effect evanesce. We estimate that, depending upon the peak value of $\\zeta$, universe expands by a factor of $10$ to $80$ times in a very short span ($\\Delta t\\sim 10^{-8}$ seconds). Another important outcome of the bulk viscosity dominated dynamics is the cavitation of QGP around $T \\sim 1.5T_{c}$. This would lead to the phenomenon of formation of cavitation bubbles within the QGP phase. The above scenario is independent of the order of QCD phase transition. We delineate some of the important cosmological consequences of the inflation and the cavitation.

  17. Bulk Rashba Semiconductors and Related Quantum Phenomena.

    Science.gov (United States)

    Bahramy, Mohammad Saeed; Ogawa, Naoki

    2017-03-29

    Bithmuth tellurohalides BiTeX (X = Cl, Br and I) are model examples of bulk Rashba semiconductors, exhibiting a giant Rashba-type spin splitting among their both valence and conduction bands. Extensive spectroscopic and transport experiments combined with the state-of-the-art first-principles calculations have revealed many unique quantum phenomena emerging from the bulk Rashba effect in these systems. The novel features such as the exotic inter- and intra-band optical transitions, enhanced magneto-optical response, divergent orbital dia-/para-magnetic susceptibility and helical spin textures with a nontrivial Berry's phase in the momentum space are among the salient discoveries, all arising from this effect. Also, it is theoretically proposed and indications have been experimentally reported that bulk Rashba semiconductors such as BiTeI have the capability of becoming a topological insulator under the application of a hydrostatic pressure. Here, we overview these studies and show that BiTeX are an ideal platform to explore the next aspects of quantum matter, which could ultimately be utilized to create spintronic devices with novel functionalities.

  18. Molecular imprinting of bulk, microporous silica

    Science.gov (United States)

    Katz, Alexander; Davis, Mark E.

    2000-01-01

    Molecular imprinting aims to create solid materials containing chemical functionalities that are spatially organized by covalent or non-covalent interactions with imprint (or template) molecules during the synthesis process. Subsequent removal of the imprint molecules leaves behind designed sites for the recognition of small molecules, making the material ideally suited for applications such as separations, chemical sensing and catalysis. Until now, the molecular imprinting of bulk polymers and polymer and silica surfaces has been reported, but the extension of these methods to a wider range of materials remains problematic. For example, the formation of substrate-specific cavities within bulk silica, while conceptually straightforward, has been difficult to accomplish experimentally. Here we describe the imprinting of bulk amorphous silicas with single aromatic rings carrying up to three 3-aminopropyltriethoxysilane side groups; this generates and occupies microporosity and attaches functional organic groups to the pore walls in a controlled fashion. The triethoxysilane part of the molecules' side groups is incorporated into the silica framework during sol-gel synthesis, and subsequent removal of the aromatic core creates a cavity with spatially organized aminopropyl groups covalently anchored to the pore walls. We find that the imprinted silicas act as shape-selective base catalysts. Our strategy can be extended to imprint other functional groups, which should give access to a wide range of functionalized materials.

  19. Evidence for Bulk Ripplocations in Layered Solids

    Science.gov (United States)

    Gruber, Jacob; Lang, Andrew C.; Griggs, Justin; Taheri, Mitra L.; Tucker, Garritt J.; Barsoum, Michel W.

    2016-09-01

    Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation–best described as an atomic scale ripple–was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain.

  20. Budker INP in ATLAS

    CERN Multimedia

    2001-01-01

    The Novosibirsk group has proposed a new design for the ATLAS liquid argon electromagnetic end-cap calorimeter with a constant thickness of absorber plates. This design has signifi- cant advantages compared to one in the Technical Proposal and it has been accepted by the ATLAS Collaboration. The Novosibirsk group is responsible for the fabrication of the precision aluminium structure for the e.m.end-cap calorimeter.

  1. Tailoring Magnetic Properties in Bulk Nanostructured Solids

    Science.gov (United States)

    Morales, Jason Rolando

    Important magnetic properties and behaviors such as coercivity, remanence, susceptibility, energy product, and exchange coupling can be tailored by controlling the grain size, composition, and density of bulk magnetic materials. At nanometric length scales the grain size plays an increasingly important role since magnetic domain behavior and grain boundary concentration determine bulk magnetic behavior. This has spurred a significant amount of work devoted to developing magnetic materials with nanometric features (thickness, grain/crystallite size, inclusions or shells) in 0D (powder), 1D (wires), and 2D (thin films) materials. Large 3D nanocrystalline materials are more suitable for many applications such as permanent magnets, magneto-optical Faraday isolators etc. Yet there are relatively few successful demonstrations of 3D magnetic materials with nanoscale influenced properties available in the literature. Making dense 3D bulk materials with magnetic nanocrystalline microstructures is a challenge because many traditional densification techniques (HIP, pressureless sintering, etc.) move the microstructure out of the "nano" regime during densification. This dissertation shows that the Current Activated Pressure Assisted Densification (CAPAD) method, also known as spark plasma sintering, can be used to create dense, bulk, magnetic, nanocrystalline solids with varied compositions suited to fit many applications. The results of my research will first show important implications for the use of CAPAD for the production of exchange-coupled nanocomposite magnets. Decreases in grain size were shown to have a significant role in increasing the magnitude of exchange bias. Second, preferentially ordered bulk magnetic materials were produced with highly anisotropic material properties. The ordered microstructure resulted in changing magnetic property magnitudes (ex. change in coercivity by almost 10x) depending on the relative orientation (0° vs. 90°) of an externally

  2. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    Science.gov (United States)

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P.; Kundu, Souvik; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava

    2015-01-01

    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm2, respectively, under AM 1.5 solar radiation.

  3. High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band.

    Science.gov (United States)

    Song, Hai-Zhi; Takemoto, Kazuya; Miyazawa, Toshiyuki; Takatsu, Motomu; Iwamoto, Satoshi; Ekawa, Mitsuru; Yamamoto, Tsuyoshi; Arakawa, Yasuhiko

    2015-06-15

    We theoretically demonstrate high quality(Q)-factor micropillar cavities at 1.55-μm wavelength based on Si/SiO(2)-InP hybrid structure. An adiabatic design in distributed Bragg reflectors (DBRs) improves Q-factor for upto 3 orders of magnitude, while reducing the diameter to sub-micrometer. A moderate Q-factor of ~3000 and a Purcell factor of ~200 are realized by only 2 taper segments and fewer conventional DBR pairs, enabling single photon generation at GHz rate. As the taper segment number is increased, Q-factor can be boosted to ~10(5)-10(6), enabling coherent exchange between the emitter and the optical mode at 1.55 μm, which is applicable in quantum information networks.

  4. Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP

    Directory of Open Access Journals (Sweden)

    Marco Saraniti

    2002-01-01

    Full Text Available We discuss the application of the fullband cellular automaton (CA method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-generated carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

  5. Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

    Institute of Scientific and Technical Information of China (English)

    Zhang Yang; Zeng Yi-Ping; Ma Long; Wang Bao-Qiang; Zhu Zhan-Ping; Wang Liang-Chen; Yang Fu-Hua

    2006-01-01

    This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm2 has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

  6. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yu, E-mail: yu.zhao@insa-rennes.fr; Bertru, Nicolas; Folliot, Hervé; Rohel, Tony [Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes Cedex 7 (France); Mauger, Samuel J. C.; Koenraad, Paul M. [COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven (Netherlands)

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  7. Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

    Science.gov (United States)

    Furlong, Mark J.; Mattingley, Mark; Lim, Sung Wook; Geen, Matthew; Jones, Wynne

    2014-06-01

    Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced night vision imaging using large format focal plane type detectors for defense and security applications. Here we report on our results of GaInAs PIN photo detector structures grown on 2", 3" and 4" InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when moving to larger platen configurations, high degree of thickness uniformity (improved performance.

  8. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

    Science.gov (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2016-09-23

    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  9. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling

    Science.gov (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2016-10-01

    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  10. Materials for Bulk Acoustic Resonators and Filters

    Science.gov (United States)

    Loebl, Hans-Peter

    2003-03-01

    Highly selective solidly mounted bulk acoustic wave (BAW) band pass filters are suited for mobile and wireless systems in the GHz frequency range between 0.8 and 10 GHz. Electro-acoustic thin film BAW resonators are the building blocks these BAW filters. Piezoelectric materials used in these resonators include mainly AlN or ZnO which can be deposited by dedicated thin film sputter deposition techniques. Using these piezo-electric materials and using suited materials for the acoustic Bragg reflector, BAW resonators with high quality factors can be fabricated. The achievable filter bandwidth is approximately 4Alternatively, also ferroelectric thin films might be used to achieve higher coupling coefficient and thus filter bandwidth. BAW resonators and filters have been designed and fabricated on 6" Silicon and glass wafers. Results are presented for resonators and filters operating between 1.95 and 8 GHz. The talk will give an overview of the material aspects which are important for BAW devices. It will be shown that modeling of the resonator and filter response using 1D electro-acoustic simulation (1,2) which includes losses is essential to extract acoustic and electrical material parameters. (1) Solidly Mounted Bulk Acoustic Wave Filters for the Ghz Frequency Range, H.P. Loebl, C. Metzmacher , D.N.Peligrad , R. Mauczok , M. Klee , W. Brand , R.F. Milsom , P.Lok , F.van Straten , A. Tuinhout , J.W.Lobeek, IEEE 2002 Ultrasonics Symposium Munich, October 2002. (2) Combined Acoustic-Electromagnetic Simulation Of Thin-Film Bulk Acoustic Wave Filters, R.F. Milsom, H-P. Löbl, D.N. Peligrad, J-W. Lobeek, A. Tuinhout, R. H. ten Dolle IEEE 2002 Ultrasonics Symposium Munich, October 2002.

  11. Improving the bulk data transfer experience

    Energy Technology Data Exchange (ETDEWEB)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  12. Binary Cu-Zr Bulk Metallic Glasses

    Institute of Scientific and Technical Information of China (English)

    TANG Mei-Bo; ZHAO De-Qian; PAN Ming-Xiang; WANG Wei-Hua

    2004-01-01

    @@ We report that bulk metallic glasses (BMGs) can be produced up to 2 mm by a copper mould casting in Cux Zr1-x binary alloy with a wide glass forming composition range (45 < x < 60 at.%). We find that the formation mechanism for the binary Cu-Zr binary BMG-forming alloy is obviously different from that of the intensively studied multicomponent BMGs. Our results demonstrate that the criteria for the multicomponent alloys with composition near deep eutectic and strong liquid behaviour are no longer the major concern for designing BMGs.

  13. Calculated Bulk Properties of the Actinide Metals

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.

    1978-01-01

    Self-consistent relativistic calculations of the electronic properties for seven actinides (Ac-Am) have been performed using the linear muffin-tin orbitals method within the atomic-sphere approximation. Exchange and correlation were included in the local spin-density scheme. The theory explains...... the variation of the atomic volume and the bulk modulus through the 5f series in terms of an increasing 5f binding up to plutonium followed by a sudden localisation (through complete spin polarisation) in americium...

  14. Diffusion and bulk flow in phloem loading

    DEFF Research Database (Denmark)

    Dölger, Julia; Rademaker, Hanna; Liesche, Johannes

    2014-01-01

    loading mechanism, active symplasmic loading, also called the polymer trap mechanism, where sucrose is transformed into heavier sugars, such as raffinose and stachyose, in the intermediary-type companion cells bordering the sieve elements in the minor veins of the phloem. Keeping the heavier sugars from......%-20% to the sucrose flux into the intermediary cells, while the main part is transported by diffusion. On the other hand, the subsequent sugar translocation into the sieve elements would very likely be carried predominantly by bulk water flow through the plasmodesmata. Thus, in contrast to apoplasmic loaders, all...

  15. Fabrication of Porous Bulk Metallic Glass

    Institute of Scientific and Technical Information of China (English)

    Keqiang QIU; Yinglei REN

    2005-01-01

    An open-cell porous bulk metallic glass (BMG)with a diameter of at least 6 mm was fabricated by using an U-turn quartz tube and infiltration casting aroundsoluble NaCl placeholders. The pore formation and glassy structure were examined by optical microscopy (OM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the pores or cells are connected to each other and the specimenis composed of a mostly glassy phase.This paper provides a suitable method for fabrication of porous BMG and BMG with larger size in diameter.

  16. Hubble Parameter in Bulk Viscous Cosmology

    CERN Document Server

    Tawfik, A; Wahba, M

    2009-01-01

    We discuss influences of bulk viscosity on the Early Universe, which is modeled by Friedmann-Robertson-Walker metric and Einstein field equations. We assume that the matter filling the isotropic and homogeneous background is relativistic viscous characterized by ultra-relativistic equations of state deduced from recent lattice QCD simulations. We obtain a set of complicated differential equations, for which we suggest approximate solutions for Hubble parameter $H$. We find that finite viscosity in Eckart and Israel-Stewart fluids would significantly modify our picture about the Early Universe.

  17. Production, Properties and Applications of Bulk Amorphous Alloys

    Institute of Scientific and Technical Information of China (English)

    Tao Zhang; Akihisa Inoue

    2000-01-01

    A review is given of recent work concerned with the production method, the characteristic properties(1) Bulk amorphous system; (2) Mechanical and magnetic properties of bulkamorphous alloys; (3)application of bulk amorphous alloys.

  18. Enhancing bulk superconductivity by engineering granular materials

    Science.gov (United States)

    Mayoh, James; García García, Antonio

    2014-03-01

    The quest for higher critical temperatures is one of the main driving forces in the field of superconductivity. Recent theoretical and experimental results indicate that quantum size effects in isolated nano-grains can boost superconductivity with respect to the bulk limit. Here we explore the optimal range of parameters that lead to an enhancement of the critical temperature in a large three dimensional array of these superconducting nano-grains by combining mean-field, semiclassical and percolation techniques. We identify a broad range of parameters for which the array critical temperature, TcArray, can be up to a few times greater than the non-granular bulk limit, Tc 0. This prediction, valid only for conventional superconductors, takes into account an experimentally realistic distribution of grain sizes in the array, charging effects, dissipation by quasiparticles and limitations related to the proliferation of thermal fluctuations for sufficiently small grains. For small resistances we find the transition is percolation driven. Whereas at larger resistances the transition occurs above the percolation threshold due to phase fluctuations. JM acknowledes support from an EPSRC Ph.D studentship, AMG acknowledges support from EPSRC, grant No. EP/I004637/1, FCT, grant PTDC/FIS/111348/2009 and a Marie Curie International Reintegration Grant PIRG07-GA-2010-268172.

  19. Characterization of bulk superconductors through EBSD methods

    Science.gov (United States)

    Koblischka, M. R.; Koblischka-Veneva, A.

    2003-10-01

    The application of electron backscatter diffraction (EBSD) technique to bulk high- Tc superconductors is presented and reviewed. Due to the ceramic nature and the complex crystallographic unit cells of the perovskite-type high- Tc superconductors, the EBSD analysis is not yet as common as it deserves. We have successfully performed EBSD analysis on a variety of high- Tc compounds and samples including polycrystalline YBCO (pure and doped by alkali metals), melt-textured YBCO, thin and thick films of YBCO; the “green phase” Y 2BaCuO 5, thin film and melt-textured NdBa 2Cu 3O x and Bi-2212 single crystals and tapes. It is shown that the surface preparation of the samples is crucial due to the small information depth (up to 100 nm) of the EBSD technique. High quality Kikuchi patterns are the requirement in order to enable the automated EBSD mapping, which yields phase distributions, individual grain orientations and the misorientation angle distribution. The results can be presented in form of mappings, as charts, and as pole figures. These informations are required for a better understanding of the growth mechanism(s) of bulk high- Tc superconductors intended for applications.

  20. Perovskite oxides: Oxygen electrocatalysis and bulk structure

    Science.gov (United States)

    Carbonio, R. E.; Fierro, C.; Tryk, D.; Scherson, D.; Yeager, Ernest

    1987-01-01

    Perovskite type oxides were considered for use as oxygen reduction and generation electrocatalysts in alkaline electrolytes. Perovskite stability and electrocatalytic activity are studied along with possible relationships of the latter with the bulk solid state properties. A series of compounds of the type LaFe(x)Ni1(-x)O3 was used as a model system to gain information on the possible relationships between surface catalytic activity and bulk structure. Hydrogen peroxide decomposition rate constants were measured for these compounds. Ex situ Mossbauer effect spectroscopy (MES), and magnetic susceptibility measurements were used to study the solid state properties. X ray photoelectron spectroscopy (XPS) was used to examine the surface. MES has indicated the presence of a paramagnetic to magnetically ordered phase transition for values of x between 0.4 and 0.5. A correlation was found between the values of the MES isomer shift and the catalytic activity for peroxide decomposition. Thus, the catalytic activity can be correlated to the d-electron density for the transition metal cations.

  1. A Batch Feeder for Inhomogeneous Bulk Materials

    Science.gov (United States)

    Vislov, I. S.; Kladiev, S. N.; Slobodyan, S. M.; Bogdan, A. M.

    2016-04-01

    The work includes the mechanical analysis of mechanical feeders and batchers that find application in various technological processes and industrial fields. Feeders are usually classified according to their design features into two groups: conveyor-type feeders and non-conveyor feeders. Batchers are used to batch solid bulk materials. Less frequently, they are used for liquids. In terms of a batching method, they are divided into volumetric and weighting batchers. Weighting batchers do not provide for sufficient batching accuracy. Automatic weighting batchers include a mass controlling sensor and systems for automatic material feed and automatic mass discharge control. In terms of operating principle, batchers are divided into gravitational batchers and batchers with forced feed of material using conveyors and pumps. Improved consumption of raw materials, decreased loss of materials, ease of use in automatic control systems of industrial facilities allows increasing the quality of technological processes and improve labor conditions. The batch feeder suggested by the authors is a volumetric batcher that has no comparable counterparts among conveyor-type feeders and allows solving the problem of targeted feeding of bulk material batches increasing reliability and hermeticity of the device.

  2. Bulk nanocrystalline Al prepared by cryomilling

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Bulk nanocrystalline Al was fabricated by mechanically milling at cryogenic temperature (cryomilling) and then by hot pressing in vacuum. By using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), the microstructure evolution of the material during cryomilling and consolidation was investigated. With increasing the milling time, the grain size decreased sharply and reduced to 42 nm when cryomilled for 12 h. The grains had grown up, and the columnar grain was formed under the hot pressing and extrusion compared with the cryomilled powders. The grain size of as-extruded specimen was approximately 300-500 nm. The reason of high thermal stability of this bulk was attributed primarily to the Zener pinning from the grain boundary of the AlN arising from cryomilling and the solute drag of the impurity. Tensile tests show that the strength of nanocrystalline Al is enhanced with decreasing grain size. The ultimate tensile strength and tensile elongation were 173 MPa and 17.5%, respectively. It appears that the measured high strength in the cryomilled Al is related to a grain-size effect, dispersion strengthening, and dislocation strengthening.

  3. Substantial bulk photovoltaic effect enhancement via nanolayering.

    Science.gov (United States)

    Wang, Fenggong; Young, Steve M; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M

    2016-01-21

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)(1-x)). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition.

  4. 19 CFR 151.24 - Unlading facilities for bulk sugar.

    Science.gov (United States)

    2010-04-01

    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a...

  5. 30 CFR 56.6802 - Bulk delivery vehicles.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Bulk delivery vehicles. 56.6802 Section 56.6802... § 56.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a bulk delivery vehicle until the vehicle has been washed down and all explosive material has been removed. Before welding...

  6. 30 CFR 57.6802 - Bulk delivery vehicles.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Bulk delivery vehicles. 57.6802 Section 57.6802...-Surface and Underground § 57.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a bulk delivery vehicle until the vehicle has been washed down and all explosive material has...

  7. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi-insulating GaAs

    Science.gov (United States)

    Kažukauskas, V.; Storasta, J.; Vaitkus, J.-V.

    1996-08-01

    The complex influence of recombination centers and potential fluctuations of the band gap on the scattering and recombination phenomena in n-type semiinsulating liquid- encapsulated-Czochralski-grown GaAs were investigated by using the transient photoconductivity and photo-Hall effects. The inhomogeneities cause a hyperbolic decrease of nonequilibrium carrier concentration and the saturation of Hall mobility, while the exponential parts of the decay appear due to the recharge of deep levels. The mean recombination barrier heights of potential fluctuations were evaluated. We propose a complex ``island'' model of scattering and recombination centers, consisting of defect clusters and their associations around dislocations, surrounded by potential barriers. At low light intensities and at the temperatures below 330 K they are insulating for majority charge carriers, thus reducing an effective crystal volume and causing percolation transport effects. At the temperature higher than 330-360 K the main barrier of the island can be recharged or screened by nonequilibrium carriers and its fine barrier structure appears as an effective scatterer, causing a sharp decrease of the nonequilibrium Hall mobility. It was demonstrated that although doping with Sb reduce dislocation density, it can intensify the effect of smaller defects on transport phenomena.

  8. Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

    Science.gov (United States)

    Guo, Rong-Rong; Jie, Wan-Qi; Zha, Gang-Qiang; Xu, Ya-Dong; Feng, Tao; Wang, Tao; Du, Zhuo-Tong

    2015-06-01

    The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32×10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process. Project supported by the National Instrumentation Program, China (Grant No. 2011YQ040082), the National Natural Science Foundation of China (Grant Nos. 61274081, 51372205, and 51202197), the National 973 Project of China (Grant No. 2011CB610400), the China Postdoctoral Science Foundation (Grant No. 2014M550509), and the 111 Project of China (Grant No. B08040).

  9. Investigations on the influence of Peltier effect and electromigration during growth of InP, InGaP and InAsP by liquid phase electro-epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fareed, R.S.Q.; Dhanasekaren, R. [Anna Univ., Madras (India). Crystal Growth Centre

    1996-12-31

    In the present communication, a model has been developed to understand the growth mechanism of InP, InGaP and InAsP semiconductors. The model is based on the diffusion and electromigration of the solute atoms. During Peltier cooling conditions, growth occurs. When the direction of the electric field is reversed, dissolution of solute atoms is observed due to Peltier heating at the interface. Computer simulation technique has been employed to construct the concentration profiles of the solute atoms in the immediate vicinity of the growing interface in the In rich melt during the growth of InP. It is observed that the concentration of the solute atoms decreases with time near the substrate-solution interface as the growth proceeds and there is increase in the concentration of the solute atoms during Peltier heating. Profiles of the solute atoms under various growth conditions such as different applied electric field, change in interface temperature, etc.

  10. Technical issues of a high-Tc superconducting bulk magnet

    Science.gov (United States)

    Fujimoto, Hiroyuki

    2000-06-01

    Superconducting magnets made of high-Tc superconductors are promising for industrial applications. It is well known that REBa2Cu3O7-x superconductors prepared by melt processes have a high critical current density, Jc, at 77 K and high magnetic fields. The materials are very promising for high magnetic field applications as a superconducting permanent/bulk magnet with liquid-nitrogen refrigeration. Light rare-earth (LRE) BaCuO bulks, compared with REBaCuO bulks, exhibit a larger Jc in high magnetic fields and a much improved irreversibility field, Hirr, at 77 K. In this study, we discuss technical issues of a high-Tc superconducting bulk magnet, namely the aspects of the melt processing for bulk superconductors, their characteristic superconducting properties and mechanical properties, and trapped field properties of a superconducting bulk magnet. One of the possible applications is a superconducting bulk magnet for the magnetically levitated (Maglev) train in the future.

  11. Bulk disk resonator based ultrasensitive mass sensor

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Davis, Zachary James

    2009-01-01

    In the framework of developing an innovative label-free sensor for multiarrayed biodetection applications, we present a novel bulk resonator based mass sensor. The sensor is a polysilicon disk which shows a Q-factor of 6400 in air at 68.8 MHz, resulting in mass resolutions down in the femtogram...... range. The sensor has been characterized in terms of sensitivity both for distributed mass detection, performing six consecutive depositions of e-beam evaporated Au, and localized mass detection, depositing approximately 7.5 pg of Pt/Ga/C three times consecutively with a Focused Ion Beam system....... The sensor has an extremely high distributed mass to frequency shift sensitivity of 60104 Hzcm2/¿g and shows a localized mass to frequency sensitivity up to 4405 Hz/pg with a localized mass resolution down to 15 fg. The device has been fabricated with a new microfabrication process that uses only two...

  12. Bulk heterojunction solar cells of three polythienothiophenes

    Directory of Open Access Journals (Sweden)

    Elif Alturk Parlak

    2015-06-01

    Full Text Available Semiconducting conjugated copolymers poly(3-phenyl-2-(thiophen-2-ylthieno[3,2-b]thiophene (PTTPh, poly(3-(4-methoxyphenyl-2-(thiophen-2-ylthieno[3,2-b]thiophene (PTTPh-OMe and poly(3-(4-N,N-dimethylaminophenyl-2-(thiophen-2-ylthieno[3,2-b]thiophene (PTTPh-N(CH 3 2, which were synthesized previously through Suzuki coupling method, were fabricated for solar cell applications. The devices had a structure of glass/ITO/PEDOT:PSS/polymer:PC61BM/Al. Bulk heterojunction photovoltaic cells were prepared as blends of PTTPh, PTTPh-OMe, PTTPh-N(CH 3 2 and PC61BM in a 1:1 ratio, which delivered power conversion efficiencies of 0.43%, 0.039% and 0.027%, respectively, without addition of additives or device optimization.

  13. Universe Models with Negative Bulk Viscosity

    CERN Document Server

    Brevik, Iver

    2013-01-01

    The concept of negative temperatures has occasionally been used in connection with quantum systems. A recent example of this sort is reported in the paper of S. Braun et al. [Science 339,52 (2013)], where an attractively interacting ensemble of ultracold atoms is investigated experimentally and found to correspond to a negative-temperature system since the entropy decreases with increasing energy at the high end of the energy spectrum. As the authors suggest, it would be of interest to investigate whether a suitable generalization of standard cosmological theory could be helpful, in order to elucidate the observed accelerated expansion of the universe usually explained in terms of a positive tensile stress (negative pressure). In the present note we take up this basic idea and investigate a generalization of the standard viscous cosmological theory, not by admitting negative temperatures but instead by letting the bulk viscosity take negative values. Evidently, such an approach breaks standard thermodynamics,...

  14. DEPLOYMENT OF THE BULK TRITIUM SHIPPING PACKAGE

    Energy Technology Data Exchange (ETDEWEB)

    Blanton, P.

    2013-10-10

    A new Bulk Tritium Shipping Package (BTSP) was designed by the Savannah River National Laboratory to be a replacement for a package that has been used to ship tritium in a variety of content configurations and forms since the early 1970s. The BTSP was certified by the National Nuclear Safety Administration in 2011 for shipments of up to 150 grams of Tritium. Thirty packages were procured and are being delivered to various DOE sites for operational use. This paper summarizes the design features of the BTSP, as well as associated engineered material improvements. Fabrication challenges encountered during production are discussed as well as fielding requirements. Current approved tritium content forms (gas and tritium hydrides), are reviewed, as well as, a new content, tritium contaminated water on molecular sieves. Issues associated with gas generation will also be discussed.

  15. Bulk metamaterials: Design, fabrication and characterization

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Malureanu, Radu; Alabastri, Alessandro

    2009-01-01

    Bulk metamaterials claim a lot of attention worldwide. We report about our activity and advances in design, fabrication and characterization of metal-dielectric composites with three-dimensional lattices. The nomenclature of designs exhibiting negative index behaviour in the near infrared includes...... the generic family of so-called nested structures. Such designs allow keeping the cubic symmetry of the unit cell along with the electric and magnetic responses showed by different parts in separate. For extraction of effective parameters we employ homemade wave propagation retrieving method free from...... ambiguity generic to the standard S-parameters retrieval method. Accurateness of the method is highlighted by a set of numerical checks. To fabricate smooth metal three-dimensional structures we develop an electroless chemical technique. We present the results of silver deposition on the surface of a 30...

  16. On bulk viscosity and moduli decay

    CERN Document Server

    Laine, M

    2010-01-01

    This pedagogically intended lecture, one of four under the header "Basics of thermal QCD", reviews an interesting relationship, originally pointed out by Bodeker, that exists between the bulk viscosity of Yang-Mills theory (of possible relevance to the hydrodynamics of heavy ion collision experiments) and the decay rate of scalar fields coupled very weakly to a heat bath (appearing in some particle physics inspired cosmological scenarios). This topic serves, futhermore, as a platform on which a number of generic thermal field theory concepts are illustrated. The other three lectures (on the QCD equation of state and the rates of elastic as well as inelastic processes experienced by heavy quarks) are recapitulated in brief encyclopedic form.

  17. Transformation of bulk alloys to oxide nanowires

    Science.gov (United States)

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  18. Organoboron polymers for photovoltaic bulk heterojunctions.

    Science.gov (United States)

    Cataldo, Sebastiano; Fabiano, Simone; Ferrante, Francesco; Previti, Francesco; Patanè, Salvatore; Pignataro, Bruno

    2010-07-15

    We report on the application of three-coordinate organoboron polymers, inherently strong electron acceptors, in flexible photovoltaic (PV) cells. Poly[(1,4-divinylenephenylene)(2,4,6-triisopropylphenylborane)] (PDB) has been blended with poly(3-hexylthiophene-2,5-diyl) (P3HT) to form a thin film bulk heterojunction (BHJ) on PET/ITO substrates. Morphology may be modulated to give a high percentage of domains (10-20 nm in size) allowing exciton separation. The photoelectric properties of the BHJs in devices with aluminium back electrodes were imaged by light beam induced current (LBIC) and light beam induced voltage (LBIV) techniques. Open circuit voltages, short circuit currents and overall external quantum efficiencies obtained are among the highest reported for all-polymer PV cells.

  19. New optical technique for bulk magnetostriction measurement

    CERN Document Server

    Samata, H; Uchida, T; Abe, S

    2000-01-01

    A new optical technique was applied to the measurement of magnetostriction in bulk samples. This technique utilizes an optical fiber bundle, AC-modulated light and lock-in detection. Deformation of the sample is determined from the ratio of the incident and reflected light intensities. Noise due to the instability of the light source is eliminated by obtaining the ratio of the incident and reflected light intensities, and the noise caused in the detector circuit can be reduced by lock-in detection. The performance of this method was characterized with a series of measurements using a gold film and crystal disks of pure iron and nickel. This technique offers a resolution of 0.5 nm and is sensitive enough to measure magnetostriction as small as 5x10 sup - sup 7 in 1 mm thick samples.

  20. Bulk semiconducting scintillator device for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  1. A route to transparent bulk metals

    KAUST Repository

    Schwingenschlögl, Udo

    2012-07-23

    Hypothetical compounds based on a sapphire host are investigated with respect to their structural as well as electronic features. The results are obtained by electronic structure calculations within density functional theory and the generalized gradient approximation. A quarter of the Al atoms in Al 2O 3 is replaced by a 4d transition metal M ion, with d 0 to d 9 electronic configuration. We perform structure optimizations for all the compounds and analyze the electronic states. Due to the sizeable band gap of the Al 2O 3 host, we can identify promising candidates for transparent bulk metals. We explain the mechanisms leading to this combination of materials properties. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Vortices in superconducting bulk, films and SQUIDs

    Indian Academy of Sciences (India)

    Ernst Helmut Brandt

    2006-01-01

    The properties of the ideal periodic vortex lattice in bulk superconductors and in films of any thickness can be calculated from Ginzburg-Landau theory by an iteration method using Fourier series. The London theory yields general analytic expressions for the magnetic field and energy of arbitrary arrangements of straight or curved vortex lines. The elasticity of the vortex lattice is highly nonlocal. The magnetic response of superconductors of realistic shapes like thin and thick strips and disks or thin rectangular plates or films, containing pinned vortices, can be computed within continuum theory by solving an integral equation. A useful example is a thin square with a central hole and a radial slit, used as superconducting quantum interference device (SQUID).

  3. Combustion of bulk titanium in oxygen

    Science.gov (United States)

    Clark, A. F.; Moulder, J. C.; Runyan, C. C.

    1975-01-01

    The combustion of bulk titanium in one atmosphere oxygen is studied using laser ignition and several analytical techniques. These were high-speed color cinematography, time and space resolved spectra in the visible region, metallography (including SEM) of specimens quenched in argon gas, X-ray and chemical product analyses, and a new optical technique, the Hilbert transform method. The cinematographic application of this technique for visualizing phase objects in the combustion zone is described. The results indicate an initial vapor phase reaction immediately adjacent to the molten surface but as the oxygen uptake progresses the evaporation approaches the point of congruency and a much reduced evaporation rate. This and the accumulation of the various soluble oxides soon drive the reaction zone below the surface where gas formation causes boiling and ejection of particles. The buildup of rutile cuts off the oxygen supply and the reaction ceases.

  4. Tuneable film bulk acoustic wave resonators

    CERN Document Server

    Gevorgian, Spartak Sh; Vorobiev, Andrei K

    2013-01-01

    To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high.  Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the softwa...

  5. Charm mass effects in bulk channel correlations

    CERN Document Server

    Burnier, Y

    2013-01-01

    The bulk viscosity of thermalized QCD matter at temperatures above a few hundred MeV could be significantly influenced by charm quarks because their contribution arises four perturbative orders before purely gluonic effects. In an attempt to clarify the challenges of a lattice study, we determine the relevant imaginary-time correlator (of massive scalar densities) up to NLO in perturbation theory, and compare with existing data. We find discrepancies much larger than in the vector channel; this may hint, apart from the importance of taking a continuum limit, to larger non-perturbative effects in the scalar channel. We also recall how a transport peak related to the scalar density spectral function encodes non-perturbative information concerning the charm quark chemical equilibration rate close to equilibrium.

  6. Holographic bulk viscosity: GPR vs EO

    CERN Document Server

    Buchel, Alex; Kiritsis, Elias

    2011-01-01

    Recently Eling and Oz (EO) proposed a formula for the holographic bulk viscosity, in arXiv:1103.1657, derived from the null horizon focusing equation. This formula seems different from that obtained earlier by Gubser, Pufu and Rocha (GPR) in arXiv:0806.0407 calculated from the IR limit of the two-point function of the trace of the stress tensor. The two were shown to agree only for some simple scaling cases. We point out that the two formulae agree in two non-trivial holographic theories describing RG flows. The first is the strongly coupled N=2* gauge theory plasma. The second is the semi-phenomenological model of Improved Holographic QCD.

  7. Organic hybrid planar-nanocrystalline bulk heterojunctions

    Science.gov (United States)

    Forrest, Stephen R.; Yang, Fan

    2011-03-01

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  8. Assessment of bioburden encapsulated in bulk materials

    Science.gov (United States)

    Schubert, Wayne W.; Newlin, Laura; Chung, Shirley Y.; Ellyin, Raymond

    2016-05-01

    The National Aeronautics and Space Administration (NASA) imposes bioburden limitations on all spacecraft destined for solar system bodies that might harbor evidence of extant or extinct life. The subset of microorganisms trapped within solid materials during manufacture and assembly is referred to as encapsulated bioburden. In the absence of spacecraft-specific data, NASA relies on specification values to estimate total spacecraft encapsulated bioburden, typically 30 endospores/cm3 or 300 viable cells/cm3 in non-electronic materials. Specification values for endospores have been established conservatively, and represent no less than an order of magnitude greater abundance than that derived from empirical assessments of actual spacecraft materials. The goal of this study was to generate data germane to determining whether revised bulk encapsulated material values (lower than those estimated by historical specifications) tailored specifically to the materials designated in modern-day spacecraft design could be used, on a case-by-case basis, to comply with planetary protection requirements. Organic materials having distinctly different chemical properties and configurations were selected. This required more than one experimental and analytical approach. Filtration was employed for liquid electrolytes, lubricants were suspended in an aqueous solution and solids (wire and epoxy sealant) were cryogenically milled. The final data characteristic for all bioburden estimates was microbial colony formation in rich agar growth medium. To assess survival potential, three non-spore-forming bacterial cell lines were systematically encapsulated in an epoxy matrix, liberated via cryogenic grinding, and cultured. Results suggest that bulk solid materials harbor significantly fewer encapsulated microorganisms than are estimated by specification values. Lithium-ion battery electrolyte reagents housed fewer than 1 CFU/cm3. Results also demonstrated that non-spore-forming microorganisms

  9. Analisys, processing and validation data from eolic stations of SONDA project (National Organization System of Environmental Data) at Brazilian National Institute for Space Research (CPTEC/INPE) .

    Science.gov (United States)

    Junior, A. B.; Nogueira, J. M.; Garcia, S. G.; Andrade, E. S.

    2007-05-01

    Asiel Bomfin Jr. LIM/CPTEC/INPE, Cachoeira Paulista, S.P., Brazil; Eliana Soares de Andrade; Jorge Luiz Martins Nogueira and Silvia Garcia de Castro. The Center for Weather Forecast and Climatic Analysis (CPTEC), a division of INPE, the Brazilian National Institute for Space Research. Several of the INPE´s departments and centers, like the CPTEC, have a variety of valuable datasets, many of them freely available and eolic data from SONDA project are also part of them at Meteorological Instrumental Laboratory (LIM). This paper presents the Analiys, processing and validation method applied to the eolic data in a temporal time of ten minutes, to be used in a PC IBM computer. This method is divided in tree separated programs. The first software called "separa.c" has the capability of divide the ingest data set in mensal files, identified by each station group. The second software called "minuto.c" does a syntactical analysis, verifying and correcting eventual lost data with NAN values. The third one called "validacode.c" generates two principal files, one containing the original data and the other with the codes of each variable for each minute analyzed. These codes is based on BSRN (Baseline Surface Radiation Network), but with some differences in their analyzed method. This method followed the Webmet.com, The Meteorological Resource Center. Table 1:Validation Codes Code Meaning 0 Quality check procedure is not avaiable for this level 2 The data is suspect 5 Quality check procedure is avaiable for this level, but not can be done 9 The data is correct Table 2: Validation levels for WIND SPEED: Validation Levels Quality check procedure for suspect data 0 Maximum and Minimum values of 25 m/s and 0 m/s 1 Can not vary more than 0,1 m/s for 03 consecutive hours 2 Can not vary more than 0,5 m/s for 12 consecutive hours 3 - Table 3: Validation levels for WIND DRECTION: Validation Levels Quality check procedure for suspect data 0 Maximum and Minimum values of 360 and 0

  10. The start-up phase of the national satellite forest monitoring systems for DRC and PNG: a joint venture between FAO and INPE

    Science.gov (United States)

    Jonckheere, I. G.; FAO UN-REDD Team Forestry Department

    2011-12-01

    Reducing Emissions from Deforestation and Forest Degradation (REDD) is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. "REDD+" goes beyond deforestation and forest degradation, and includes the role of conservation, sustainable management of forests and enhancement of forest carbon stocks. In the framework of getting countries ready for REDD+, the UN-REDD Programme, a partnership between UNEP, FAO and UNDP, assists developing countries to prepare and implement national REDD+ strategies. Designed collaboratively by a broad range of stakeholders, national UN-REDD Programmes are informed by the technical expertise of FAO, UNDP and UNEP. For the monitoring, reporting and verification, FAO supports the countries to develop satellite forest monitoring systems that allow for credible measurement, reporting and verification (MRV)of REDD+ activities. These are among the most critical elements for the successful implementation of any REDD+ mechanism, also following the COP 16 decisions in Cancun last year. The UN-REDD Programme through a joint effort of FAO and Brazil's National Space Agency, INPE, is supporting countries to develop cost-effective, robust and compatible national monitoring and MRV systems, providing tools, methodologies, training and knowledge sharing that help countries to strengthen their technical and institutional capacity for effective MRV systems. To develop strong nationally-owned forest monitoring systems, technical and institutional capacity building is key. The UN-REDD Programme, through FAO, has taken on intensive training together with INPE, and has provided technical help and assistance for in-country training and implementation for national satellite forest monitoring. The goal of the start-up phase for DRC and Papua New Guinea (PNG) in this capacity building effort is the

  11. Performance and applications of quench melt-growth bulk magnets

    Science.gov (United States)

    Nariki, S.; Teshima, H.; Morita, M.

    2016-03-01

    This paper describes the progress in quench melt-growth (QMG) bulk magnets, developed by the Nippon Steel & Sumitomo Metal Corporation, which consist of single crystalline RE123 phase and finely dispersed RE211 particles. QMG bulks can trap high magnetic fields. The field-trapping ability of QMG bulks is largely increased with an improvement in its J c and size, promising the realization of various applications such as flywheel energy-storage systems, ship motors, NMR/MRI spectrometers, wind-power generators and so on. Intensive research has revealed that the optimal RE element is different depending on application requirements. Gd-QMG bulk is the most promising material for several high-field engineering applications. The trapped magnetic field of Gd-QMG bulk 60 mm in diameter at 77 K is twice as large as that of Y-QMG bulk with a similar size due to its excellent J c properties. The large Gd-based QMG bulks up to 150 mm in diameter are fabricated by incorporating the RE compositional gradient method. Compact NMR/MRI spectrometers are one of the promising applications of bulk superconductors. Eu-QMG bulks are suitable for NMR magnets. NMR applications require extremely homogeneous magnetic fields. In the Eu-system, the small paramagnetic moment of a Eu ion compared to a Gd ion improves the field homogeneity in the bulk. For the application of current leads, Dy-based QMG is available by utilizing a low thermal conductivity.

  12. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Science.gov (United States)

    Halder, Nripendra N.; Biswas, Pranab; Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S.; Biswas, D.; Banerji, P.

    2014-01-01

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10-80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e1) to the heavy hole band (hh1). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of the PL intensity

  13. Simulation of the impacts land use and land cover changes - LUCC on the hydrological response of the Ji-Parana Basin with MGB-INPE model

    Science.gov (United States)

    Rodriguez, D. A.; Tomasella, J.

    2012-04-01

    Hydrological response results from innumerous processes interacting at different spatial and temporal scales and with various intensities. Since the hydrological impacts of Land use and land cover change (LUCC) and climate variability (CV) are strongly dependent on soil water flow pathways, an adequate representation of the runoff generation mechanisms are crucial to assess the hydrological impacts of LUCC and CV on a basin scale. Model responses to LUCC depend on structure and parameterizations used in the model. There are two basic methodologies adopted to define the structure of the hydrological model: downward and upward approaches. Upward approach is more appropriate for identifying causal relationships, but their results are highly affected by assumptions used in the development of the model. Besides, model structure and parameters values definition are strongly affected by scale issues and their inter-relationships. Downward approach is more appropriate for studying the effects of LUCC, but casual relationships are more difficult to identify. MGB-INPE model was developed based on the Large Scale Basins Model of Brazilian Institute of Hydraulic Research (MGB-IPH). It uses the Xinanjiang Model approach for soil water capacity distribution at each cell combined with TopModel philosophy. Both methodologies follow a downward approach: the hydrologic response of the basin is associated with patterns of self-organization observed at the basin-scale. The model was applied in the Ji-Parana Basin (JPB), a 30.000-km2 basin in the SW Amazonia. The JPB is part of the Deforestation Arc of Amazonia in Brazil and it has lost more than 50 % of his forest cover since the 80's. Simulations were performed between 1982 and 2005 considering annual land use and land cover change. MGB-INPE model was able to represent the impact of LUCC in the runoff generation process and its dependence with basin topography. Simulation results agree with observational studies: LUCC impacts in fast

  14. Gravitational potential wells and the cosmic bulk flow

    CERN Document Server

    Kumar, Abhinav; Feldman, Hume A; Watkins, Richard

    2015-01-01

    The bulk flow is a volume average of the peculiar velocities and a useful probe of the mass distribution on large scales. The gravitational instability model views the bulk flow as a potential flow that obeys a Maxwellian Distribution. We use two N-body simulations, the LasDamas Carmen and the Horizon Run, to calculate the bulk flows of various sized volumes in the simulation boxes. Once we have the bulk flow velocities as a function of scale, we investigate the mass and gravitational potential distribution around the volume. We found that matter densities can be asymmetrical and difficult to detect in real surveys, however, the gravitational potential and its gradient may provide better tools to investigate the underlying matter distribution. This study shows that bulk flows are indeed potential flows and thus provides information on the flow sources. We also show that bulk flow magnitudes follow a Maxwellian distribution on scales $>10\\ h^{-1}$Mpc.

  15. A CFT Perspective on Gravitational Dressing and Bulk Locality

    CERN Document Server

    Lewkowycz, Aitor; Verlinde, Herman

    2016-01-01

    We revisit the construction of local bulk operators in AdS/CFT with special focus on gravitational dressing and its consequences for bulk locality. Specializing to 2+1-dimensions, we investigate these issues via the proposed identification between bulk operators and cross-cap boundary states. We obtain explicit expressions for correlation functions of bulk fields with boundary stress tensor insertions, and find that they are free of non-local branch cuts but do have non-local poles. We recover the HKLL recipe for restoring bulk locality for interacting fields as the outcome of a natural CFT crossing condition. We show that, in a suitable gauge, the cross-cap states solve the bulk wave equation for general background geometries, and satisfy a conformal Ward identity analogous to a soft graviton theorem, Virasoro symmetry, the large N conformal bootstrap and the uniformization theorem all play a key role in our derivations.

  16. Finsler geometric perspective on the bulk flow in the universe

    CERN Document Server

    Cahng, Zhe; Wang, Sai

    2013-01-01

    Astronomical observations showed that there exists a bulk flow with peculiar velocities in the universe, which contradicts with the (\\Lambda)CDM model. The bulk flow reveals that the observational universe is anisotropic at large scales. In this paper, we propose a "wind" scenario to the bulk flow. Under the influence of the "wind", the spacetime metric could become a Finsler structure. By resolving the null geodesic equation, we obtain the modified luminosity distance, which has a dipolar form at the leading order. Thus, the "wind" describes well the bulk flow. In addition, we perform a least-(\\chi^2) fit to the data of type Ia supernovae (SNe Ia) in the Union2.1 compilation. The peculiar velocity of the bulk flow has an upper limit (v_{bulk}\\lesssim 4000 \\rm{km/s}), which is compatible with all the existing observational values.

  17. Macroscopic and direct light propulsion of bulk graphene material

    CERN Document Server

    Zhang, Tengfei; Wu, Yingpeng; Xiao, Peishuang; Yi, Ningbo; Lu, Yanhong; Ma, Yanfeng; Huang, Yi; Zhao, Kai; Yan, Xiao-Qing; Liu, Zhi-Bo; Tian, Jian-Guo; Chen, Yongsheng

    2015-01-01

    It has been a great challenge to achieve the direct light manipulation of matter on a bulk scale. In this work, the direct light propulsion of matter was observed on a macroscopic scale for the first time using a bulk graphene based material. The unique structure and properties of graphene and the morphology of the bulk graphene material make it capable of not only absorbing light at various wavelengths but also emitting energetic electrons efficiently enough to drive the bulk material following Newtonian mechanics. Thus, the unique photonic and electronic properties of individual graphene sheets are manifested in the response of the bulk state. These results offer an exciting opportunity to bring about bulk scale light manipulation with the potential to realize long-sought proposals in areas such as the solar sail and space transportation driven directly by sunlight.

  18. Bulk Glassy Alloys: Historical Development and Current Research

    Directory of Open Access Journals (Sweden)

    Akihisa Inoue

    2015-06-01

    Full Text Available This paper reviews the development of current research in bulk glassy alloys by focusing on the trigger point for the synthesis of the first bulk glassy alloys by the conventional mold casting method. This review covers the background, discovery, characteristics, and applications of bulk glassy alloys, as well as recent topics regarding them. Applications of bulk glassy alloys have been expanding, particularly for Fe-based bulk glassy alloys, due to their unique properties, high glass-forming ability, and low cost. In the near future, the engineering importance of bulk glassy alloys is expected to increase steadily, and continuous interest in these novel metallic materials for basic science research is anticipated.

  19. Recent developments of film bulk acoustic resonators

    Science.gov (United States)

    Gao, Junning; Liu, Guorong; Li, Jie; Li, Guoqiang

    2016-06-01

    Film bulk acoustic wave resonator (FBAR) experienced skyrocketing development in the past 15 years, owing to the explosive development of mobile communication. It stands out in acoustic filters mainly because of high quality factor, which enables low insertion loss and sharp roll off. Except for the massive application in wireless communication, FBARs are also promising sensors because of the high sensitivity and readily integration ability to miniaturize circuits. On the ground of summarizing FBAR’s application in wireless communication as filters and in sensors including electronic nose, bio field, and pressure sensing, this paper review the main challenges of each application faced. The number of filters installed in the mobile phone has being grown explosively, which leads to overcrowded bands and put harsh requirements on component size and power consumption control for each unit. Data flow and rate are becoming increasingly demanding as well. This paper discusses three promising technical strategies addressing these issues. Among which coupled resonator filter is given intense attention because it is able to vigorously reduce the filter size by stacking two or more resonators together, and it is a great technique to increase data flow and rate. Temperature compensation methods are discussed considering their vital influence on frequency stability. Finally, materials improvement and novel materials exploration for band width modulation, tunable band acquisition, and quality factor improvement are discussed. The authors appeal attention of the academic society to bring AlN epitaxial thin film into the FBAR fabrication and have proposed a configuration to implement this idea.

  20. Fault current limiter using bulk oxides superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Belmont, O.; Ferracci, P.; Porcar, L.; Barbut, J.M. [Schneider Electric, Grenoble (France). Usine A3; Tixador, P.; Noudem, J.G.; Bourgault, D.; Tournier, R

    1998-08-01

    We study the limitation possibilities of bulk Bi high T{sub c} materials. For this we test these materials with AC or DC currents above their critical currents. We study particularly the evolution of the voltage with time or with current. The material, the value of the current and the time duration play important parts. For sintered Bi samples the voltage depends only on the current even for values much larger than the critical current. With textured samples the V(I) curves shows an hysteretic behaviour due to a warming up. The textured materials are more interesting than sintered ones in terms of required volume for the current limitation. In both cases the superconductors are in a dissipative state but not in the normal state. This state is nevertheless reached if the dissipated energy inside the sample is sufficient. We have tried to apply a magnetic field on the samples in order to trigger a more effective limitation. The voltage increases but with a limited effect for currents much higher (3-4 times) than the critical zero field current. We think that the dissipative state is due mainly to the grain boundaries which become resistive above the critical current. (orig.) 11 refs.

  1. On methods of estimating cosmological bulk flows

    CERN Document Server

    Nusser, Adi

    2015-01-01

    We explore similarities and differences between several estimators of the cosmological bulk flow, $\\bf B$, from the observed radial peculiar velocities of galaxies. A distinction is made between two theoretical definitions of $\\bf B$ as a dipole moment of the velocity field weighted by a radial window function. One definition involves the three dimensional (3D) peculiar velocity, while the other is based on its radial component alone. Different methods attempt at inferring $\\bf B$ for either of these definitions which coincide only for a constant velocity field. We focus on the Wiener Filtering (WF, Hoffman et al. 2015) and the Constrained Minimum Variance (CMV,Feldman et al. 2010) methodologies. Both methodologies require a prior expressed in terms of the radial velocity correlation function. Hoffman et al. compute $\\bf B$ in Top-Hat windows from a WF realization of the 3D peculiar velocity field. Feldman et al. infer $\\bf B$ directly from the observed velocities for the second definition of $\\bf B$. The WF ...

  2. Bulk viscous cosmology: statefinder and entropy

    CERN Document Server

    He, X

    2006-01-01

    The statefinder diagnostic pair is adopted to differentiate viscous cosmology models and it is found that the trajectories of these viscous cosmology models on the statefinder pair $s-r$ plane are quite different from those of the corresponding non-viscous cases. Particularly for the quiessence model, the singular properties of state parameter $w=-1$ are obviously demonstrated on the statefinder diagnostic pair planes. We then discuss the entropy of the viscous / dissipative cosmology system which may be more practical to describe the present cosmic observations as the perfect fluid is just a global approximation to the complicated cosmic media in current universe evolution. When the bulk viscosity takes the form of $\\zeta=\\zeta_{1}\\dot{a}/a$($\\zeta_{1}$ is constant), the relationship between the entropy $S$ and the redshift $z$ is explicitly given out. We find that the entropy of the viscous cosmology is always increasing and consistent with the thermodynamics arrow of time for the universe evolution. With t...

  3. Determination of Bulk Dimensional Variation in Castings

    Energy Technology Data Exchange (ETDEWEB)

    Dr. James F. Cuttino Dr. Edward P. Morse

    2005-04-14

    The purpose of this work is to improve the efficiency of green sand foundries so that they may continue to compete as the most cost-effective method of fabrication while meeting tightening constraints on near-net shape manufacturing. In order to achieve this objective, the study is divided into two major components. The first component concentrated on identifying which processes control surface finish on the castings and which provide potential reductions in variations. The second component identified metrological methods that effectively discern between the geometry of bulk material versus surface finish in order to more accurately determine the quality of a part. The research resulted in the determination of an empirical relationship relating pouring parameters to dimensional variation, with an R2 value of greater than 0.79. A significant difference in variations obtained from vertical vs. horizontal molding machines was also noticed. When analyzed separately, however, the resulting empirical relationships for horizontal and vertical machines had reduced R2 values, probably due to the reduced data sets. Significant parameters when considering vertical and horizontal molding machines together included surface roughness, pattern type, iron type, pouring rate, copper content, amount of Western Bentonite, and permeability.

  4. Material Profile Influences in Bulk-Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Roehling, John D.; Rochester, Christopher W.; Ro, Hyun W.; Wang, Peng; Majewski, Jaroslaw; Batenburg, Kees J.; Arslan, Ilke; Delongchamp, Dean M.; Moule, Adam J.

    2014-10-01

    he morphology in mixed bulk-heterojunction films are compared using three different quantitative measurement techniques. We compare the vertical composition changes using high-angle annular dark-field scanning transmission electron microscopy with electron tomography and neutron and x-ray reflectometry. The three measurement techniques yield qualita-tively comparable vertical concentration measurements. The presence of a metal cathode during thermal annealing is observed to alter the fullerene concentration throughout the thickness of the film for all measurements. However, the abso-lute vertical concentration of fullerene is quantitatively different for the three measurements. The origin of the quantitative measurement differences is discussed. The authors thank Luna Innovations, Inc. for donating the endohedral fullerenes used in this study and Plextronics for the P3HT. They are gratefully thank the National Science Foundation Energy for Sustainability Program, Award No. 0933435. This work benefited from the use of the Lujan Neutron Scattering Center at Los Alamos Neutron Science Center funded by the DOE Office of Basic Energy Sciences and Los Alamos National Laboratory under DOE Contract DE-AC52-06NA25396. This research was also supported in part by Laboratory Directed Research & Development program at PNNL. The Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy under contract DE-AC05-76RL01830.

  5. Failure Prediction in Bulk Metal Forming Process

    Directory of Open Access Journals (Sweden)

    Ameen Topa

    2014-01-01

    Full Text Available An important concern in metal forming is whether the desired deformation can be accomplished without defects in the final product. Various ductile fracture criteria have been developed and experimentally verified for a limited number of cases of metal forming processes. These criteria are highly dependent on the geometry of the workpiece and cannot be utilized for complicated shapes without experimental verification. However, experimental work is a resource hungry process. This paper proposes the ability of finite element analysis (FEA software such as LS-DYNA to pinpoint the crack-like flaws in bulk metal forming products. Two different approaches named as arbitrary Lagrangian-Eulerian (ALE and smooth particle hydrodynamics (SPH formulations were adopted. The results of the simulations agree well with the experimental work and a comparison between the two formulations has been carried out. Both approximation methods successfully predicted the flow of workpiece material (plastic deformation. However ALE method was able to pinpoint the location of the flaws.

  6. Photoelectron spectroscopy bulk and surface electronic structures

    CERN Document Server

    Suga, Shigemasa

    2014-01-01

    Photoelectron spectroscopy is now becoming more and more required to investigate electronic structures of various solid materials in the bulk, on surfaces as well as at buried interfaces. The energy resolution was much improved in the last decade down to 1 meV in the low photon energy region. Now this technique is available from a few eV up to 10 keV by use of lasers, electron cyclotron resonance lamps in addition to synchrotron radiation and X-ray tubes. High resolution angle resolved photoelectron spectroscopy (ARPES) is now widely applied to band mapping of materials. It attracts a wide attention from both fundamental science and material engineering. Studies of the dynamics of excited states are feasible by time of flight spectroscopy with fully utilizing the pulse structures of synchrotron radiation as well as lasers including the free electron lasers (FEL). Spin resolved studies also made dramatic progress by using higher efficiency spin detectors and two dimensional spin detectors. Polarization depend...

  7. Thermodynamic properties of bulk and confined water

    Energy Technology Data Exchange (ETDEWEB)

    Mallamace, Francesco, E-mail: francesco.mallamace@unime.it [Dipartimento di Fisica e Scienza della Terra Università di Messina and CNISM, I-98168 Messina (Italy); Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Center for Polymer Studies and Department of Physics, Boston University, Boston, Massachusetts 02215 (United States); Corsaro, Carmelo [Dipartimento di Fisica e Scienza della Terra Università di Messina and CNISM, I-98168 Messina (Italy); Mallamace, Domenico [Dipartimento di Scienze dell' Ambiente, della Sicurezza, del Territorio, degli Alimenti e della Salute, Università di Messina, I-98166 Messina (Italy); Vasi, Sebastiano; Vasi, Cirino [IPCF-CNR, I-98166 Messina (Italy); Stanley, H. Eugene [Center for Polymer Studies and Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)

    2014-11-14

    The thermodynamic response functions of water display anomalous behaviors. We study these anomalous behaviors in bulk and confined water. We use nuclear magnetic resonance (NMR) to examine the configurational specific heat and the transport parameters in both the thermal stable and the metastable supercooled phases. The data we obtain suggest that there is a behavior common to both phases: that the dynamics of water exhibit two singular temperatures belonging to the supercooled and the stable phase, respectively. One is the dynamic fragile-to-strong crossover temperature (T{sub L} ≃ 225 K). The second, T{sup *} ∼ 315 ± 5 K, is a special locus of the isothermal compressibility K{sub T}(T, P) and the thermal expansion coefficient α{sub P}(T, P) in the P–T plane. In the case of water confined inside a protein, we observe that these two temperatures mark, respectively, the onset of protein flexibility from its low temperature glass state (T{sub L}) and the onset of the unfolding process (T{sup *})

  8. Junction characteristics of indium tin oxide/indium phosphide solar cells

    Science.gov (United States)

    Sheldon, P.; Ahrenkiel, R. K.; Hayes, R. E.; Russell, P. E.; Nottenburg, R. N.; Kazmerski, L. L.

    Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12 percent at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. We believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

  9. Preliminary study of superconducting bulk magnets for Maglev

    Science.gov (United States)

    Fujimoto, Hiroyuki; Kamijo, Hiroki

    Recent development shows that melt-processed YBaCuO (Y123) or Rare Earth (RE)123 superconductors have a high Jc at 77 K and high magnetic field, leading to high field application as a superconducting quasi-permanent bulk magnet with the liquid nitrogen refrigeration. One of the promising applications is a superconducting magnet for the magnetically levitated (Maglev) train. We discuss a superconducting bulk magnet for the Maglev train in the aspect of a preliminary design of the bulk magnet and also processing for (L)REBaCuO bulk superconductors and their characteristic superconducting properties.

  10. Bulk flow scaling for turbulent channel and pipe flows

    CERN Document Server

    Chen, Xi; She, Zhen-Su

    2016-01-01

    We report a theory deriving bulk flow scaling for canonical wall-bounded flows. The theory accounts for the symmetries of boundary geometry (flat plate channel versus circular pipe) by a variational calculation for a large-scale energy length, which characterizes its bulk flow scaling by a simple exponent, i.e. $m=4$ for channel and 5 for pipe. The predicted mean velocity shows excellent agreement with several dozen sets of quality empirical data for a wide range of the Reynolds number (Re), with a universal bulk flow constant $\\kappa\\approx0.45$. Predictions for dissipation and turbulent transport in the bulk flow are also given, awaiting data verification.

  11. Binding of electrons, holes, and excitons in symmetric strained InP/ In0.49 Ga0.51 P triple quantum-dot molecules

    Science.gov (United States)

    Tadić, M.; Peeters, F. M.

    2004-11-01

    The electron, hole, and exciton spectra in the strained quantum-dot molecule consisting of three vertically arranged type-II InP/ In0.49 Ga0.51 P self-assembled quantum dots are modeled by the k•p theory. For the sake of simplicity, we consider dots of cylindrical shape, but take into account the anisotropy of the strain through the continuum mechanical model. For thick spacers, the strain leads to an upward shift of the lowest energies in all explored electron shells, but for spacers thinner than, say, the coupling length, the quantum mechanical coupling prevails, and downward shifts are observed. The magnitudes of both the energy shift and the coupling length vary with the quantum-dot height. For the holes, the interplay of strain and mixing enables binding at larger distances than for the electrons. The overlap of the hole clouds is basically established by means of the light holes, which are confined by the strain in the spacer between the dots and may efficiently couple the heavy-hole states, which are localized inside the quantum dots. Similar to electrons, the exciton lowest-energy states of different angular momenta, as computed by an exact-diagonalization approach, exhibit overshoots on the single-quantum-dot levels. Good agreement is found with experiment on the spatial location of electrons and holes in the triple-quantum-dot molecules.

  12. Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

    Science.gov (United States)

    Halder, Nripendra N.; Biswas, Pranab; Nagabhushan, B.; Kundu, Souvik; Biswas, D.; Banerji, P.

    2014-05-01

    Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine the band offsets in a heterojunction made of InP quantum dots on Si. The valence and conduction band offset was found to be 0.12 eV and 0.35 eV, respectively, with a type-II band lineup. Deviation from theoretical prediction and previously published reports on quasi similar systems have been found and analyzed on the basis of the effect of strain, surface energy, shift in the electrostatic dipole and charge transfer at the interface. The carrier transport mechanisms along with different device parameters in the heterojunction have been studied for a temperature range of 180-300 K. This heterojunction is found to behave as an efficient infrared photodetector with an ON/OFF ratio of 21 at a reverse bias of 2 V. The corresponding rise and decay time was found to be 132 ms and 147 ms, respectively.

  13. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

    Science.gov (United States)

    Ezzedini, Maher; Sfaxi, Larbi; M'Ghaieth, Ridha

    2017-01-01

    Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp2Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp2Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp2Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.

  14. Projected Range, Straggling and Sputtering Yield of the Ion-Impingement of Inert Gases in Group IV, InP and GaAs Semiconductors

    Directory of Open Access Journals (Sweden)

    J.D. Femi-Oyetoro

    2015-03-01

    Full Text Available One of the major challenges in ion implantation and sputtering process (especially in thin film deposition is to get a shallow or very deep profile and maximum sputtering yield respectively. In this paper, we simulate the projected range, lateral straggle, longitudinal straggle and sputtering yield of inert gas ions (He+, Ne+, Ar+, Kr+, Xe+, Rn+ impinged in group IV elements (C, Si, Ge, Sn, Pb, InP and GaAs against different parameters (ion energy and angle of incident ion, using the TRIM Monte-Carlo Code as embedded in SRIM. In particular, we generated a result on the consistency of the projected range, lateral and longitudinal straggle with the angle of incident ion using ion energies 1 KeV and 10 KeV. However an inconsistency exists in the sputtering yield and we noticed that maximum sputtering yield occurs for certain incident angle. In conclusion, the results presented here provides parameters needed to get low or high projected range and straggling, and also the exact incident angle needed in getting the maximum sputtering yield for the ion-target combinations used.

  15. Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)

    2016-02-07

    III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

  16. High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions in InP

    Energy Technology Data Exchange (ETDEWEB)

    Gueissaz, F.; Houdre, R.; Ilegems, M. (Inst. de Micro- et Optoelectronique, Ecole Polytechnique Federale de Lausanne (Switzerland))

    1991-05-01

    We present results of a growth study concerning the electrical properties of lattice matched InAlGa/InGaAs single planar doped (SPD) and double planar doped (DPD) heterostructures grwon on InP by molecular beam epitaxy (MBE). It is shown that room temperature electron mobilities ({mu}{sub H}) as high as 11000 cm{sup 2}/V.s at high sheet densities of 2.8x10{sup 12} cm{sup -2} can be obtained by optimizing the growth temperatures of each material in the SPD structure. High performance two-dimensional electron gas field effect transistors (TEGFET's) are demonstrated, with transconductances as high as 420 mS/mm at 1 {mu}m gatelength and f{sub T}'s of 46 GHz at 0.7 {mu}m gatelength. The DPD heterostructures further boost the n{sub s} values up to 6.2x10{sup 12} cm{sup -2} at {mu}{sub H} (300 K)=6000 cm{sup 2}/V.s. (orig.).

  17. Bulk Vitrification Castable Refractory Block Protection Study

    Energy Technology Data Exchange (ETDEWEB)

    Hrma, Pavel R.; Bagaasen, Larry M.; Beck, Andrew E.; Brouns, Thomas M.; Caldwell, Dustin D.; Elliott, Michael L.; Matyas, Josef; Minister, Kevin BC; Schweiger, Michael J.; Strachan, Denis M.; Tinsley, Bronnie P.; Hollenberg, Glenn W.

    2005-05-01

    Bulk vitrification (BV) was selected for a pilot-scale test and demonstration facility for supplemental treatment to accelerate the cleanup of low-activity waste (LAW) at the Hanford U.S. DOE Site. During engineering-scale (ES) tests, a small fraction of radioactive Tc (and Re, its nonradioactive surrogate) were transferred out of the LAW glass feed and molten LAW glass, and deposited on the surface and within the pores of the castable refractory block (CRB). Laboratory experiments were undertaken to understand the mechanisms of the transport Tc/Re into the CRB during vitrification and to evaluate various means of CRB protection against the deposition of leachable Tc/Re. The tests used Re as a chemical surrogate for Tc. The tests with the baseline CRB showed that the molten LAW penetrates into CRB pores before it converts to glass, leaving deposits of sulfates and chlorides when the nitrate components decompose. Na2O from the LAW reacts with the CRB to create a durable glass phase that may contain Tc/Re. Limited data from a single CRB sample taken from an ES experiment indicate that, while a fraction of Tc/Re is present in the CRB in a readily leachable form, most of the Tc/Re deposited in the refractory is retained in the form of a durable glass phase. In addition, the molten salts from the LAW, mainly sulfates, chlorides, and nitrates, begin to evaporate from BV feeds at temperatures below 800 C and condense on solid surfaces at temperatures below 530 C. Three approaches aimed at reducing or preventing the deposition of soluble Tc/Re within the CRB were proposed: metal lining, sealing the CRB surface with a glaze, and lining the CRB with ceramic tiles. Metal liners were deemed unsuitable because evaluations showed that they can cause unacceptable distortions of the electric field in the BV system. Sodium silicate and a low-alkali borosilicate glaze were selected for testing. The glazes slowed down molten salt condensate penetration, but did little to reduce the

  18. Cavitation instability in bulk metallic glasses

    Directory of Open Access Journals (Sweden)

    Dai L.H.

    2015-01-01

    Full Text Available Recent experiments have shown that fracture surfaces of bulk metallic glasses (BMGs usually exhibit an intriguing nanoscale corrugation like fractographic feature mediated by nanoscale void formation. We attribute the onset of this nanoscale corrugation to TTZs (tension transformation zones mediated cavitation. In our recent study, the spall experiments of Zr-based BMG using a single-stage light gas gun were performed. To uncover the mechanisms of the spallation damage nucleation and evolution, the samples were designed to be subjected to dynamic tensile loadings of identical amplitude but with different durations by making use of the multi-stress pulse and the double-flyer techniques. It is clearly revealed that the macroscopic spall fracture in BMGs originates from the nucleation, growth and coalescence of micro-voids. Then, a microvoid nucleation model of BMGs based on free volume theory is proposed, which indicates that the nucleation of microvoids at the early stage of spallation in BMGs is resulted from diffusion and coalescence of free volume. Furthermore, a theoretical model of void growth in BMGs undergoing remote dynamic hydrostatic tension is developed. The critical condition of cavitation instability is obtained. It is found that dynamic void growth in BMGs can be well controlled by a dimensionless inertial number characterizing the competition between intrinsic and extrinsic time scales. To unveil the atomic-level mechanism of cavitation, a systematic molecular dynamics (MD simulation of spallation behaviour of a binary metallic glass with different impact velocities was performed. It is found that micro-void nucleation is determined TTZs while the growth is controlled by shear transformation zones (STZs at atomic scale.

  19. Silicon bulk micromachined hybrid dimensional artifact.

    Energy Technology Data Exchange (ETDEWEB)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  20. Bulk forming of industrial micro components in conventional metals and bulk metallic glasses

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Paldan, Nikolas Aulin; Eriksen, Rasmus Solmer;

    2007-01-01

    For production of micro components in large numbers, forging is an interesting and challenging process. The conventional metals like silver, steel and aluminum often require multi-step processes, but high productivity and increased strength justify the investment. As an alternative, bulk metallic...... glasses will at elevated temperatures behave like a highly viscous liquid, which can easily form even complicated geometries in 1 step. The strengths and limitations of forming the 2 materials are analyzed for a micro 3D component in a silver alloy and an Mg-Cu-Y BMG. ©2007 American Institute of Physics...

  1. Advanced and new developments in bulk metal forming

    DEFF Research Database (Denmark)

    Bay, Niels; Wanheim, Tarras; Ravn, Bjarne Gottlieb;

    2000-01-01

    Increasing demands to manufacturing industry of faster, better and cheaper production has intensified the research and development of bulk metal forming. The present paper gives examples on European industrial research on secondary bulk metal forming processes. The R&D follows three lines of appr...

  2. T-duality trivializes bulk-boundary correspondence

    CERN Document Server

    Mathai, Varghese

    2015-01-01

    Recently we introduced T-duality in the study of topological insulators. In this paper, we study the bulk-boundary correspondence for three phenomena in condensed matter physics, namely, the quantum Hall effect, the Chern insulator, and time reversal invariant topological insulators. In all of these cases, we show that T-duality trivializes the bulk-boundary correspondence.

  3. 7 CFR 58.211 - Packaging room for bulk products.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Packaging room for bulk products. 58.211 Section 58... Service 1 Rooms and Compartments § 58.211 Packaging room for bulk products. A separate room or area shall... dust within the packaging room and where needed, a dust collector shall be provided and...

  4. Import and Export of Bulk Pharmaceuticals in 2006

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    @@ According to customs statistics, the total import and export value of bulk pharmaceuticals (excluding chemical raw materials and bulk pesticides) in China was US$10.346 billion in 2006. The export value was US$7.482 billion - an increase of 22% over the 2005.

  5. 27 CFR 24.301 - Bulk still wine record.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk still wine record. 24..., DEPARTMENT OF THE TREASURY LIQUORS WINE Records and Reports § 24.301 Bulk still wine record. A proprietor who produces or receives still wine in bond, (including wine intended for use as distilling material or...

  6. Nucleation of bulk superconductivity close to critical magnetic fields

    DEFF Research Database (Denmark)

    Fournais, Søren; Kachmar, Ayman

    2011-01-01

    threshold value of the applied magnetic field for which bulk superconductivity contributes to the leading order of the energy. Furthermore, the energy of the bulk is related to that of the Abrikosov problem in a periodic lattice. A key ingredient of the proof is a novel L∞ -bound which is of independent...

  7. Stability of bulk metallic glass structure

    Energy Technology Data Exchange (ETDEWEB)

    Jain, H.; Williams, D.B.

    2003-06-18

    The fundamental origins of the stability of the (Pd-Ni){sub 80}P{sub 20} bulk metallic glasses (BMGs), a prototype for a whole class of BMG formers, were explored. While much of the properties of their BMGs have been characterized, their glass-stability have not been explained in terms of the atomic and electronic structure. The local structure around all three constituent atoms was obtained, in a complementary way, using extended X-ray absorption fine structure (EXAFS), to probe the nearest neighbor environment of the metals, and extended energy loss fine structure (EXELFS), to investigate the environment around P. The occupied electronic structure was investigated using X-ray photoelectron spectroscopy (XPS). The (Pd-Ni){sub 80}P{sub 20} BMGs receive their stability from cumulative, and interrelated, effects of both atomic and electronic origin. The stability of the (Pd-Ni){sub 80}P{sub 20} BMGs can be explained in terms of the stability of Pd{sub 60}Ni{sub 20}P{sub 20} and Pd{sub 30}Ni{sub 50}P{sub 20}, glasses at the end of BMG formation. The atomic structure in these alloys is very similar to those of the binary phosphide crystals near x=0 and x=80, which are trigonal prisms of Pd or Ni atoms surrounding P atoms. Such structures are known to exist in dense, randomly-packed systems. The structure of the best glass former in this series, Pd{sub 40}Ni{sub 40}P{sub 20} is further described by a weighted average of those of Pd{sub 30}Ni{sub 50}P{sub 20} and Pd{sub 60}Ni{sub 20}P{sub 20}. Bonding states present only in the ternary alloys were found and point to a further stabilization of the system through a negative heat of mixing between Pd and Ni atoms. The Nagel and Tauc criterion, correlating a decrease in the density of states at the Fermi level with an increase in the glass stability, was consistent with greater stability of the Pd{sub x}Ni{sub (80-x)}P{sub 20} glasses with respect to the binary alloys of P. A valence electron concentration of 1.8 e/a, which

  8. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  9. Bulk density - RTD results and status of the standardisation

    Energy Technology Data Exchange (ETDEWEB)

    Boehm, T.; Hartmann, H. [Technologie- und Foerderzentrum fuer Nachwachsende Rohstoffe - TFZ, Straubing (Germany); Daugbjerg Jensen, P. [Royal Veterinary and Agricultural University, Vejle (Denmark). Danish Centre for Forest, Landscape and Planning - DFLRI; Temmerman, M.; Rabier, F. [CRA, Gembloux (Belgium). Department Genie Rural; Jirjis, R.; Burvall, J. [Swedish University of Agricultural Sciences, Uppsala (Sweden). Department of Bioenergy; Hersener, J.L. [Ingenieurbuero HERSENER, Wiesendangen (Switzerland); Rathbauer, J. [Bundesanstalt fuer Landtechnik - BLT, Wieselburg (Austria)

    2004-07-01

    Bulk density is an important property for determining storage and transportation room demands and for volume based payment of biofuels. It is also used for calculation of the energy density. Furthermore, bulk density influences the readings from many physical principles for rapid moisture content determination (e. g. microwave reflection method, time domain reflectometric or capacitive sensors [6]). Although bulk density is mostly regarded as an easily determinable parameter, the applied national and international standard methods are highly inconsistent in practice [1, 4, 8]. The goal of the here presented research was therefore to provide a sound knowledge basis for bulk density determination, which shall be used in the ongoing process of European biofuel standardisation. In particular the research focus was to determine the - effect of container size and shape in respect of different biofuels, - effect of shock impact and the - effect of moisture content (as received) on measured bulk density (dry basis). (orig.)

  10. Bulk viscosity, interaction and the viability of phantom solutions

    CERN Document Server

    Leyva, Yoelsy

    2016-01-01

    We study the dynamics of a bulk viscosity model in the Eckart approach for a spatially flat Friedmann-Robertson-Walker (FRW) universe. We have included radiation and dark energy, assumed as perfect fluids, and dark matter treated as an imperfect fluid having bulk viscosity. We also introduce an interaction term between the dark matter and dark energy components. Considering that the bulk viscosity is proportional to the dark matter energy density and imposing a complete cosmological dynamics, we find bounds on the bulk viscosity in order to reproduce a matter-dominated era (MDE). This constraint is independent of the interaction term. Some late time phantom solutions are mathematically possible. However, the constraint imposed by a MDE restricts the interaction parameter, in the phantom solutions, to a region consistent with a null value, eliminating the possibility of late time stable solutions with $w<-1$. From the different cases that we study, the only possible scenario, with bulk viscosity and interac...

  11. Bulk viscosity of spin-one color superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sa' d, Basil A.

    2009-08-27

    The bulk viscosity of several quark matter phases is calculated. It is found that the effect of color superconductivity is not trivial, it may suppress, or enhance the bulk viscosity depending on the critical temperature and the temperature at which the bulk viscosity is calculated. Also, is it found that the effect of neutrino-emitting Urca processes cannot be neglected in the consideration of the bulk viscosity of strange quark matter. The results for the bulk viscosity of strange quark matter are used to calculate the r-mode instability window of quark stars with several possible phases. It is shown that each possible phase has a different structure for the r-mode instability window. (orig.)

  12. Application of the penetration theory for gas - Liquid mass transfer without liquid bulk : Differences with system with a bulk

    NARCIS (Netherlands)

    van Elk, E. P.; Knaap, M. C.; Versteeg, G. F.

    2007-01-01

    Frequently applied micro models for gas-liquid mass transfer all assume the presence of a liquid bulk. However, some systems are characterized by the absence of a liquid bulk, a very thin layer of liquid flows over a solid surface. An example of such a process is absorption in a column equipped with

  13. A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

    Science.gov (United States)

    Dixit, V. K.; Porwal, S.; Singh, S. D.; Sharma, T. K.; Ghosh, Sandip; Oak, S. M.

    2014-02-01

    Temperature dependence of the photoluminescence (PL) peak energy of bulk and quantum well (QW) structures is studied by using a new phenomenological model for including the effect of localized states. In general an anomalous S-shaped temperature dependence of the PL peak energy is observed for many materials which is usually associated with the localization of excitons in band-tail states that are formed due to potential fluctuations. Under such conditions, the conventional models of Varshni, Viña and Passler fail to replicate the S-shaped temperature dependence of the PL peak energy and provide inconsistent and unrealistic values of the fitting parameters. The proposed formalism persuasively reproduces the S-shaped temperature dependence of the PL peak energy and provides an accurate determination of the exciton localization energy in bulk and QW structures along with the appropriate values of material parameters. An example of a strained InAs0.38P0.62/InP QW is presented by performing detailed temperature and excitation intensity dependent PL measurements and subsequent in-depth analysis using the proposed model. Versatility of the new formalism is tested on a few other semiconductor materials, e.g. GaN, nanotextured GaN, AlGaN and InGaN, which are known to have a significant contribution from the localized states. A quantitative evaluation of the fractional contribution of the localized states is essential for understanding the temperature dependence of the PL peak energy of bulk and QW well structures having a large contribution of the band-tail states.

  14. Improving Performance in Dense Wireless Spaces by Controlling Bulk Traffic

    Directory of Open Access Journals (Sweden)

    Marat Zhanikeev

    2017-01-01

    Full Text Available The growing number of wireless devices nowadays often results in congestion of wireless channels. In research, this topic is referred to as networking in dense wireless spaces. The literature on the topic shows that the biggest problem is the high number of concurrent sessions to a wireless access point. The obvious solution is to reduce the number of concurrent sessions. This paper proposes a simple method called Bulk-n-Pick which minimizes the number of prolonged concurrent sessions by separating bulk from sync traffic. Aiming at educational applications, under the proposed design, web applications would distribute the main bulk of content once at the beginning of a class and then rely on small messages for real time sync traffic during the class. For realistic performance analysis, this paper first performs real-life experiments with various counts of wireless devices, bulk sizes, and levels of sync intensity. Based on the experiments, this paper shows that the proposed Bulk-n-Pick method outperforms the traditional design even when only two concurrent bulk sessions are allowed. The experiment shows that up to 10 concurrent bulk sessions are feasible in practice. Based on these results, a method for online performance optimization is proposed and validated in a trace-based emulation.

  15. Impacto de perfis de rádio ocultação GNSS na qualidade das Previsões de tempo do CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Luiz Fernando Sapucci

    2014-12-01

    Full Text Available Estudos sobre a sensibilidade dos modelos de previsão numérica de tempo a erros nas condições iniciais têm evidenciado a contribuição da assimilação de dados na melhoria do desempenho dos mesmos em descrever o estado futuro da atmosfera. Entre outras fontes de dados, a assimilação de perfis atmosféricos obtidos por rádio ocultação Global Navigation Satellite System (GNSS tem-se destacado como uma ferramenta adicional na redução das deficiências do sistema de coleta de dados meteorológicos. Com o intuito de explorar os benefícios dessa fonte adicional de dados na previsão numérica de tempo gerada pelo modelo de circulação geral atmosférico do CPTEC/INPE, foram realizados experimentos assimilando perfis atmosféricos de altura geopotencial e umidade obtidos por rádio ocultação GNSS, utilizando dados da constelação Constellation Observing System for Meteorology Ionosphere & Climate (COSMIC, para os meses de janeiro e julho de 2009. Os resultados mostraram que o impacto é significativamente positivo durante o verão em todas as variáveis de estado, com ganhos expressivos na extensão das previsões válidas (coeficiente de correlação de anomalia acima de 60%, os quais foram em alguns casos superiores a 48 horas. Esse impacto foi ainda maior sobre a América do Sul com resultados positivos mesmo durante o inverno.

  16. MBE Growth of High Electron Mobility InP Epilayers%高电子迁移率InP/InP外延材料的MBE生长

    Institute of Scientific and Technical Information of China (English)

    舒永春; 姚江宏; 林耀望; 邢小东; 皮彪; 徐波; 王占国; 许京军

    2005-01-01

    The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0~7.0) and growth rate (0. 437 and 0. 791μm/h). Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters, which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized and electron concentration of 1.55 × 1015 cm-3 have been achieved with an epilayer thickness of 2.35μtm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.%采用固态磷源分子束外延技术在InP(100)衬底上生长了高质量的InP外延材料.实验结果表明InP/InP外延材料的电学性质与诸多生长参数密切相关.根据霍耳测量结果,对生长条件和实验参数进行了优化,在生长温度为370℃,磷裂解温度为850℃,生长速率为0.791μm/h和束流比为2.5的条件下,获得了厚度为2.35μm的InP/InP外延材料.在77K温度下,电子浓度为1.55×1015cm-3,电子迁移率达到4.57×104cm2/(V·s).

  17. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    Science.gov (United States)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  18. The mechanism of twinning in zincblende structure crystals: New insights on polarity effects from a study of magnetic liquid encapsulated Czochralski grown InP single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dudley, M.; Raghothamachar, B.; Guo, Y. [State Univ. of New York, Stony Brook, NY (United States). Dept. of Materials Science and Engineering] [and others

    1998-12-31

    Synchrotron White Beam X-ray Topography (SWBXT) and synchrotron X-ray anomalous scattering have been employed to determine the polarity of {l_brace}111{r_brace} edge facets, anchored to the three phase boundary (TPB) on which twinning is observed to nucleate in Magnetic Liquid Encapsulated Czochralski (MLEC) grown sulfur doped, <001> InP single crystals. Analysis of the results indicates that both the formation of edge facets and the nucleation of twins occur preferentially on {l_brace}{bar 1}{bar 1}{bar 1}{r_brace}{sub P} faces. Of the four possible sets of edge facets, belonging to the {l_brace}{bar 1}{bar 1}{bar 1}{r_brace}{sub P} form, which are oriented so as to be thermodynamically favored to be anchored to the TPB, two can give rise to a {l_brace}115{r_brace} to {l_brace}{bar 1}{bar 1}{bar 1}{r_brace}{sub P} external should facet conversion upon twinning, while the other two can give rise to a {l_brace}114{r_brace} to {l_brace}110{r_brace} conversion. For these cases, twinning is only observed when the {l_brace}{bar 1}{bar 1}{bar 1}{r_brace}{sub P} edge facets are anchored to the TPB in a region where the shoulder angle is close to 74.21{degree} or 70.53{degree}, facilitating the production of the {l_brace}115{r_brace} and {l_brace}114{r_brace} external should facets, respectively, prior to twinning. These observations are discussed in light of calculated surface energies of the various internal and external facets.

  19. Eco Issues in Bulk Materials Handling Technologies in Ports

    Directory of Open Access Journals (Sweden)

    Nenad Zrnić

    2011-09-01

    Full Text Available This paper deals with eco issues in bulk materials handling in ports. Solid, free-flowing materials are said to be in bulk. Bulk materials handling is very difficult, because it incorporates all the features of liquids, gasses and mass solids. Energy efficiency, dust emissions in nearby environment, dust explosions, jamming, noise, handling of hazardous materials and protection of materials from contamination are issues that will be considered in this paper. Here are also presented possible solutions for some of these issues

  20. Bulk sound velocity of porous materials at high pressures

    Institute of Scientific and Technical Information of China (English)

    耿华运; 吴强; 谭华; 蔡灵仓; 经福谦

    2002-01-01

    A correction of Walsh's method for bulk sound velocity calculation for shocked porous materials is accomplishedbased on the Wu-Jing thermodynamic equation of state. The corrected bulk velocities for solid and porous sampleswith low porosities are in good agreement with the corresponding experimental data published previously. On the basisof this corrected equation, the influence of thermoelectrons on the bulk velocity of shocked materials is discussed indetail at pressures of 50, 70 and 200 GPa. Some interesting phenomena are revealed, which seem to be the uniquefeatures of a dynamic-pressure-loading process and could not be found in static experiments.

  1. Negative Effects of Sludge Bulking in Membrane Bio-Reactor

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; HUANG Zhi; REN Nanqi; MENG Qingjuan

    2006-01-01

    Sludge bulking property of membrane bio-reactor was investigated in this study through contrast research. When the sludge bulking appeared, the removal efficiency of COD in membrane bio-reactor increased slightly through the function of filamentous bacteria. However, the negative effects of the higher net water-head differential pressures, the high block rate of membrane pore and the great quantity of filamentous bacteria at the external surface presented at the same time. Thus, plenty of methods should be performed to control sludge bulking once it happened in membrane bio-reactor.

  2. Optimization and Performance Analysis of Bulk-Driven Differential Amplifier

    Directory of Open Access Journals (Sweden)

    Antarpreet kaur

    2014-04-01

    Full Text Available In recent years, there has been an increasing demand for high-speed digital circuits at low power consumption. This paper presents a design of input stage of Operational Amplifier i.e cascode differential amplifier using a standard 65nm CMOS Technology.A comparison betweem gate-driven, bulk-driven and cascode bulk driven bulk-driven differential amplifier is described. The Results demonstrate that CMMR is 83.98 dB, 3-dB Bandwidth is 1.04 MHz. The circuit dissipate power of 28uWunder single supply of 1.0V.

  3. Alternative technology of nanoparticles consolidation in the bulk material

    Directory of Open Access Journals (Sweden)

    VOLKOV Georgiy Michailovich

    2016-02-01

    Full Text Available Theoretical bases and technological principles of single-stages nanoparticles conso-lidation into bulk material were offered. The theory was implemented on the model system of carbon-carbon in the process of high-temperature pyrolysis of hydrocar-bons. The bulk carbon nanomaterial with unique technical properties was produced. That made it possible to create engineering products which technical characteristics are higher than the existing level in the world. The proposed theory can be adapted to other gas-phase, liquid phase and secondary crystallization processes to create bulk nanomaterials of another chemical composition with no less unique properties.

  4. Control of bulking phenomena and foaming by respirometry; Control del fenomeno bulking y foaming por respirometria

    Energy Technology Data Exchange (ETDEWEB)

    Serrano, E.

    2002-07-01

    The kinetic respirometry may represent an irreplaceable tool for the F/M control and toxicity detection in a waste water treatment plant control. The benefit of the respirometry lies on the fact that when using the genuine activated sludge from the own plant biological reactor, it reflects its current reality. On the other hand, the simplicity of the technique offers its possibility to be incorporated in different types of monitoring and control systems. In addition to a possible out of range dissolved oxygen and pH, the most common cause of the bulking and foaming phenomenon appearance may come from the F/M unbalance and toxicity. The type of respirometry we should make use lies on a kinetic system in where a serie of respiration rates can graphically represent the metabolization process of the organic matter. On this subject, we are utilizing a biological activity parameter figured out from the specific respiration rate Rsp determination. (Author)

  5. Advanced Manufacturing Technologies (AMT): Bulk Metallic Glass Element

    Data.gov (United States)

    National Aeronautics and Space Administration — The first major objective of the ‘Bulk Metallic Glasses (BMGs) for Space Applications’ project is to raise the technology readiness level dry lubricated,...

  6. Bulk metallic glasses: A new class of engineering materials

    Indian Academy of Sciences (India)

    Joysurya Basu; S Ranganathan

    2003-06-01

    Bulk glass-forming alloys have emerged over the past fifteen years with attractive properties and technological promise. A number of alloy systems based on lanthanum, magnesium, zirconium, palladium, iron, cobalt and nickel have been discovered. Glass-forming ability depends on various factors like enthalpy of mixing, atomic size and multicomponent alloying. A number of processes is available to synthesise bulk metallic glasses. The crystallisation behaviour and mechanical properties of these alloys pose interesting scientific questions. Upon crystallisation many of these glasses transform to bulk nanocrystals and nanoquasicrystals. A detailed study of the structure and the crystallisation behaviour of glasses has enabled the elucidation of the possible atomic configuration in liquid alloys. Their crystallisation behaviour can be exploited to synthesise novel nanocomposite microstructures and their mechanical properties can be enhanced. A broad overview of the present status of the science and technology of bulk metallic glasses and their potential technological uses is presented.

  7. 27 CFR 19.588 - Construction of bulk conveyances.

    Science.gov (United States)

    2010-04-01

    ... compartment) shall be so arranged that it can be completely drained. (3) Each tank car or tank truck shall... device, for carrying required marks or brands shall be provided on each bulk conveyance. (6)...

  8. Nondestructive Method for Bulk Chemical Characterization of Barred Olivine Chondrules

    Science.gov (United States)

    Montoya-Perez, M. A.; Cervantes-de la Cruz, K. E.; Ruvalcaba-Sil, J. L.

    2017-02-01

    This work develops a bulk chemical characterization of barred olivine chondrules based on the XRF analysis using a portable equipment at the National Research and Conservation Science Laboratory of Cultural Heritage (LANCIC-IF) in Mexico City.

  9. Bulk modification of PDMS microchips by an amphiphilic copolymer.

    Science.gov (United States)

    Xiao, Yan; Yu, Xiao-Dong; Xu, Jing-Juan; Chen, Hong-Yuan

    2007-09-01

    A simple and rapid bulk-modification method based on adding an amphiphilic copolymer during the fabrication process was employed to modify PDMS microchips. Poly(lactic acid)-poly(ethylene glycol) (PLA-PEG) was used as the additive substance. Compared to the native PDMS microchips, both the contact angle and the EOF of the bulk-modified PDMS microchips decreased. The effects of the additive loading and the pH on the EOF were investigated in detail. The bulk-modified PDMS microchips exhibited reproducible and stable EOF behavior. The application of the bulk-modified PDMS microchips was also studied and the results indicated that they could be successfully used to separate amino acids and to suppress protein adsorption.

  10. Efficiency of bulk-heterojunction organic solar cells.

    Science.gov (United States)

    Scharber, M C; Sariciftci, N S

    2013-12-01

    During the last years the performance of bulk heterojunction solar cells has been improved significantly. For a large-scale application of this technology further improvements are required. This article reviews the basic working principles and the state of the art device design of bulk heterojunction solar cells. The importance of high power conversion efficiencies for the commercial exploitation is outlined and different efficiency models for bulk heterojunction solar cells are discussed. Assuming state of the art materials and device architectures several models predict power conversion efficiencies in the range of 10-15%. A more general approach assuming device operation close to the Shockley-Queisser-limit leads to even higher efficiencies. Bulk heterojunction devices exhibiting only radiative recombination of charge carriers could be as efficient as ideal inorganic photovoltaic devices.

  11. Bulk Viscosity Effects in Event-by-Event Relativistic Hydrodynamics

    CERN Document Server

    Noronha-Hostler, Jacquelyn; Noronha, Jorge; Andrade, Rone P G; Grassi, Frederique

    2013-01-01

    Bulk viscosity effects on the collective flow harmonics in heavy ion collisions are investigated, on an event by event basis, using a newly developed 2+1 Lagrangian hydrodynamic code named v-USPhydro which implements the Smoothed Particle Hydrodynamics (SPH) algorithm for viscous hydrodynamics. A new formula for the bulk viscous corrections present in the distribution function at freeze-out is derived starting from the Boltzmann equation for multi-hadron species. Bulk viscosity is shown to enhance the collective flow Fourier coefficients from $v_2(p_T)$ to $v_5(p_T)$ when $% p_{T}\\sim 1-3$ GeV even when the bulk viscosity to entropy density ratio, $% \\zeta/s$, is significantly smaller than $1/(4\\pi)$.

  12. Bulk metallic glass for low noise fluxgate Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The team of Prime Photonics, Virginia Tech, and Utron Kinetics propose to demonstrate a method for fabrication of a bulk, amorphous, cobalt-rich material that...

  13. Solidex 84 - modern technology in bulk solids handling

    Energy Technology Data Exchange (ETDEWEB)

    1984-01-01

    Proceedings from Conference on solids handling. Sections which are of interest include coal and ash handling, and flow problems and explosion hazards in bulk handling plant. 14 papers have been abstracted separately.

  14. Compositional ordering and stability in nanostructured, bulk thermoelectric alloys.

    Energy Technology Data Exchange (ETDEWEB)

    Hekmaty, Michelle A.; Faleev, S.; Medlin, Douglas L.; Leonard, F.; Lensch-Falk, J.; Sharma, Peter Anand; Sugar, J. D.

    2009-09-01

    Thermoelectric materials have many applications in the conversion of thermal energy to electrical power and in solid-state cooling. One route to improving thermoelectric energy conversion efficiency in bulk material is to embed nanoscale inclusions. This report summarize key results from a recently completed LDRD project exploring the science underpinning the formation and stability of nanostructures in bulk thermoelectric and the quantitative relationships between such structures and thermoelectric properties.

  15. Alternative technology of nanoparticles consolidation in the bulk material

    OpenAIRE

    VOLKOV Georgiy Michailovich

    2016-01-01

    Theoretical bases and technological principles of single-stages nanoparticles conso-lidation into bulk material were offered. The theory was implemented on the model system of carbon-carbon in the process of high-temperature pyrolysis of hydrocar-bons. The bulk carbon nanomaterial with unique technical properties was produced. That made it possible to create engineering products which technical characteristics are higher than the existing level in the world. The proposed theory can be ada...

  16. LHC signatures of vector boson emission from brane to bulk

    CERN Document Server

    Kirpichnikov, D V

    2012-01-01

    In the framework of the RSII-n model with n compact and one infinite extra dimensions, we study the production of Z-bosons and photons, which escape into the bulk, in association with a jet in pp collisions at the LHC energies. This would show up as the process pp -> jet+bulk. We calculate the distributions in the jet transverse momentum and rapidity and compare them with the Standard Model background pp->jet +\

  17. Dirac Fermions without bulk backscattering in rhombohedral topological insulators

    Science.gov (United States)

    Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto

    2015-03-01

    The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).

  18. Bulk flow of halos in $\\Lambda$CDM simulation

    CERN Document Server

    Li, Ming; Gao, Liang; Jing, Yipeng; Yang, Xiaohu; Chi, Xuebin; Feng, Longlong; Kang, Xi; Lin, Weipeng; Shang, Guihua; Wang, Long; Zhao, Donghai; Zhang, Pengjie

    2012-01-01

    Analysis of the Pangu N-body simulation validates that bulk flow of halos follows Maxwellian distribution of which variance is consistent with prediction of linear perturbation theory of structure formation. We propose that consistency between observed bulk velocity and theories shall be examined at the effective scale as radius of spherical top-hat window function yielding the same smoothed velocity variance in linear theory as the sample window does. Then we compared some recently estimated bulk flows from observational samples with prediction of the $\\Lambda$CDM model we used, some results deviate the expectation at level of $\\sim 3\\sigma$ but the tension is not as severe as previously claimed. We disclose that bulk flow is weakly correlated with dipole of internal mass distribution, alignment angle between mass dipole and bulk flow has broad distribution but is peaked at $\\sim 30-50^\\circ$, meanwhile bulk flow shows little dependence on mass of halos used for estimation. In the simulation of box size $1h^...

  19. Cytotoxicity assessment of functionalized CdSe, CdTe and InP quantum dots in two human cancer cell models

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Hu, Rui [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, Jianwei [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Zhang, Butian; Wang, Yucheng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, Xin [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Law, Wing-Cheung [Department of Industrial and System Engineering, The Hang Kong Polytechnic University, Hung Hom (Hong Kong); Liu, Liwei [School of Science, Changchun University of Science and Technology, Changchun 130022 (China); Ye, Ling, E-mail: lye_301@163.com [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Yong, Ken-Tye, E-mail: ktyong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2015-12-01

    protocols are urgently needed to be developed and employed for fully assessing and understanding the origins of the toxicity arising from different QD formulations. - Highlights: • The cytotoxicity of CdSe, CdTe and InP based on four QD formulations were assessed. • Gastric adenocarcinoma and neuroblastoma cells showed different toxicity responses. • Multi-factors including core, coating and cell type contribute to QD cytotoxicity. • The cellular uptake of QDs plays an important role in the toxicity impact of QDs.

  20. InP单晶的磁光和热电效应%Magneto-Optical and Seebeck Effect of InP Single Crystal

    Institute of Scientific and Technical Information of China (English)

    潘静; 李晓岚; 杨瑞霞; 孙聂枫

    2011-01-01

    The physical properties were measured for the undoped InP using the temperature control multi purpose cryostat. The temperature dependent photoconductivity measurement was investigated.The room temperature energy gap was 1. 339 2 eV and it's temperature coefficient was found to be -3 × 10-4 eV/K in the range of 295 -318 K . The magneto-optical properties were measured up to 1.8 T,the magnetic coefficient of Eg is 8.6 × 10-4 eV/T. From this value, the reduced effective mass of electrons mr * was found to be 0. 067 m0. From thermoelectric power measurements, Seebeck coefficient was found to be 565 μV/K at room temperature. The density of state effective mass md * was calculated and found to be 0. 075 7m0 according to seebeck coefficient and the Hall measurement value. This value and that of the reduced effective mass of electrons mentioned above gave the effective mass of electrons in the valance band mv * of 0. 591 mO in this lnP sample.%对同一原生非掺杂InP单晶进行了一系列物理测试分析,研究了材料的光电导率与温度的依从关系,在295~318 K内,温度系数为-3×104 eV/K,测得的室温禁带宽度为1.339 2 eV.禁带宽度Eg的磁性系数为8.6×10-4eV/T,材料的磁光特性测量结果为1.8 T.由此数据可得,约化电子有效质量mr*为0.067m0.由热电功率测量结果可得室温塞贝克系数为565 μV/K.由此值以及霍尔测量值,可计算出状态密度有效质量md为0.075 7m0.由该值和上面提到的约化电子有效质量可得到InP样品的价带电子有效质量mv*为0.591m0.

  1. Dark goo: Bulk viscosity as an alternative to dark energy

    CERN Document Server

    Gagnon, Jean-Sebastien

    2011-01-01

    We present a simple (microscopic) model in which bulk viscosity plays a role in explaining the present acceleration of the universe. The effect of bulk viscosity on the Friedmann equations is to turn the pressure into an "effective" pressure containing the bulk viscosity. For a sufficiently large bulk viscosity, the effective pressure becomes negative and could mimic a dark energy equation of state. Our microscopic model includes self-interacting spin-zero particles (for which the bulk viscosity is known) that are added to the usual energy content of the universe. We study both background equations and linear perturbations in this model. We show that a dark energy behavior is obtained for reasonable values of the two parameters of the model (i.e. the mass and coupling of the spin-zero particles) and that linear perturbations are well-behaved. There is no apparent fine tuning involved. We also discuss the conditions under which hydrodynamics holds, in particular that the spin-zero particles must be in local eq...

  2. Thermoplastic Micro-Forming of Bulk Metallic Glasses: A Review

    Science.gov (United States)

    Li, Ning; Chen, Wen; Liu, Lin

    2016-04-01

    Bulk metallic glasses are a fascinating class of metallic alloys with an isotropic amorphous structure that is rapidly quenched from liquid melts. The absence of a crystalline micro-structure endows them with a portfolio of properties such as high strength, high elasticity, and excellent corrosion resistance. Whereas the limited plasticity and hence poor workability at ambient temperature impede the structural application of bulk metallic glasses, the unique superplasticity within the supercooled liquid region opens an alternative window of so-called thermoplastic forming, which allows precise and versatile net-shaping of complex geometries on length scales ranging from nanometers to centimeters that were previously unachievable with conventional crystalline metal processing. Thermoplastic forming not only breaks through the bottleneck of the manufacture of bulk metallic glasses at ambient temperature but also offers an alluring prospect in micro-engineering applications. This paper comprehensively reviews some pivotal aspects of bulk metallic glasses during thermoplastic micro-forming, including an in-depth understanding of the crystallization kinetics of bulk metallic glasses and the thermoplastic processing time window, the thermoplastic forming map that clarifies the relationship between the flow characteristics and the formability, the interfacial friction in micro-forming and novel forming methods to improve the formability, and the potential applications of the hot-embossed micro-patterns/components.

  3. Large-scale HTS bulks for magnetic application

    Science.gov (United States)

    Werfel, Frank N.; Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter

    2013-01-01

    ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN2 and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500-3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN2 allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved.

  4. Developments in the processing of bulk (RE)BCO superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Babu, N. Hari, E-mail: mtsthbn@brunel.ac.u [Brunel Centre for Advanced Solidification Technology (BCAST), Brunel University, West London UB8 3PH (United Kingdom); Shi, Y.-H.; Pathak, S.K.; Dennis, A.R.; Cardwell, D.A. [Bulk Superconductivity Group, Engineering Department, University of Cambridge, Cambridge CB2 1PZ (United Kingdom)

    2011-03-15

    Research highlights: {yields} (RE)-Ba-Cu-O bulk superconductors containing nano-scale inclusions are fabricated. {yields} Generic seed crystal development enabled batch process for Gd-Ba-Cu-O. {yields} Multi-grains with strongly coupled grain boundaries are fabricated. {yields} We propose recycling concept for bulk superconductors. - Abstract: The development of a practical processing method for the fabrication of high performance large, single grain bulk superconductors is essential for their cost-effective application in a variety of high field engineering devices. We discuss recent developments in the processing of these materials that enable high performance bulk superconductors to be fabricated in a practical way. These include the introduction of nano-scale second phase inclusions to the superconducting phase matrix, the development of a generic seed crystal, the development of practical, batch processing routes for the fabrication of light rare earth superconductors, the processing of complex shaped geometries via controlled multi-seeding and recycling of scrap bulk samples into high performance, single grains.

  5. Depth of cure of bulk-fill flowable composite resins.

    Science.gov (United States)

    Pedalino, Inaam; Hartup, Grant R; Vandewalle, Kraig S

    2015-01-01

    In recent years, manufacturers have introduced flowable composite resins that reportedly can be placed in increments of 4 mm or greater. The purpose of this study was to evaluate the depth of cure of bulk-fill flowable composite resins (SureFil SDR Flow, Grandio Flow, and Venus Bulk Fill) and a conventional flowable composite resin (Revolution Formula 2). Depth of cure was measured in terms of bottom-maximum Knoop hardness number (KHN) ratios and the International Organization for Standardization (ISO) 4049 scrape technique. Shades A2 and A3 of SureFil SDR Flow, Grandio Flow, and Revolution Formula 2 were tested. Venus Bulk Fill was tested in its only available shade (universal). Specimens in thicknesses of 2, 3, 4, 5, and 6 mm were polymerized for 20 or 40 seconds, and a hardness tester was used to determine the hardness ratios for each shade at each thickness. For the scraping technique, after specimens were exposed to the curing light, unpolymerized composite resin was removed with a plastic instrument, the polymerized composite was measured, and the length was divided by 2 per ISO guidelines. According to the KHN ratios and the scrape test, Venus Bulk Fill predictably exceeded the manufacturer's claim of a 4-mm depth of cure at both 20 and 40 seconds of curing time. The overall results for depth of cure showed that Venus Bulk Fill ≥ SureFil SDR Flow ≥ Grandio Flow ≥ Revolution Formula 2.

  6. Universal properties of bulk viscosity near the QCD phase transition

    CERN Document Server

    Karsch, F; Tuchin, K

    2008-01-01

    We extract the bulk viscosity of hot quark-gluon matter in the presence of light quarks from the recent lattice data on the QCD equation of state. For that purpose we extend the sum rule analysis by including the contribution of light quarks. We also discuss the universal properties of bulk viscosity in the vicinity of a second order phase transition, as it might occur in the chiral limit of QCD at fixed strange quark mass and most likely does occur in two-flavor QCD. We point out that a chiral transition in the O(4) universality class at zero baryon density as well as the transition at the chiral critical point which belongs to the Z(2) universality class both lead to the critical behavior of bulk viscosity. In particular, the latter universality class implies the divergence of the bulk viscosity, which may be used as a signature of the critical point. We discuss the physical picture behind the dramatic increase of bulk viscosity seen in our analysis, and devise possible experimental tests of related phenome...

  7. Evaluation and remediation of bulk soap dispensers for biofilm.

    Science.gov (United States)

    Lorenz, Lindsey A; Ramsay, Bradley D; Goeres, Darla M; Fields, Matthew W; Zapka, Carrie A; Macinga, David R

    2012-01-01

    Recent studies evaluating bulk soap in public restroom soap dispensers have demonstrated up to 25% of open refillable bulk-soap dispensers were contaminated with ~ 6 log(10)(CFU ml(-1)) heterotrophic bacteria. In this study, plastic counter-mounted, plastic wall-mounted and stainless steel wall-mounted dispensers were analyzed for suspended and biofilm bacteria using total cell and viable plate counts. Independent of dispenser type or construction material, the bulk soap was contaminated with 4-7 log(10)(CFU ml(-1)) bacteria, while 4-6 log(10)(CFU cm(-2)) biofilm bacteria were isolated from the inside surfaces of the dispensers (n = 6). Dispenser remediation studies, including a 10 min soak with 5000 mg l(-1) sodium hypochlorite, were then conducted to determine the efficacy of cleaning and disinfectant procedures against established biofilms. The testing showed that contamination of the bulk soap returned to pre-test levels within 7-14 days. These results demonstrate biofilm is present in contaminated bulk-soap dispensers and remediation studies to clean and sanitize the dispensers are temporary.

  8. EBSD analysis of MgB2 bulk superconductors

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Schmauch, J.; Inoue, K.; Muralidhar, M.; Berger, K.; Noudem, J.

    2016-04-01

    The grain orientation, the texture and the grain boundary misorientations are important parameters for the understanding of the magnetic properties of the bulk MgB2 samples intended for super-magnet applications. Such data can be provided by electron backscatter diffraction (EBSD) analysis. However, as the grain size (GS) of the MgB2 bulks is preferably in the 100-200 nm range, the common EBSD technique working in reflection operates properly only on highly dense samples. In order to achieve a reasonably good Kikuchi pattern quality on all samples, we apply here the newly developed transmission EBSD (t-EBSD) technique to several bulk MgB2 samples. This method requires the preparation of TEM slices by means of focused ion-beam milling, which are then analyzed within the SEM, operating with a specific sample holder. We present several EBSD mappings of samples prepared with different techniques and at various reaction temperatures.

  9. Bulk fabrication and properties of solar grade silicon microwires

    Directory of Open Access Journals (Sweden)

    F. A. Martinsen

    2014-11-01

    Full Text Available We demonstrate a substrate-free novel route for fabrication of solar grade silicon microwires for photovoltaic applications. The microwires are fabricated from low purity starting material via a bulk molten-core fibre drawing method. In-situ segregation of impurities during the directional solidification of the fibres yields solar grade silicon cores (microwires where the concentration of electrically detrimental transition metals has been reduced between one and two orders of magnitude. The microwires show bulk minority carrier diffusion lengths measuring ∼40 μm, and mobilities comparable to those of single-crystal silicon. Microwires passivated with amorphous silicon yield diffusion lengths comparable to those in the bulk.

  10. Composite superconducting bulks for efficient heat dissipation during pulse magnetization

    Science.gov (United States)

    Baskys, A.; Patel, A.; Hopkins, S.; Kenfaui, D.; Chaud, X.; Zhang, M.; Glowacki, B. A.

    2014-05-01

    Pulsed field magnetization is the most practical method of magnetizing a (RE)BCO bulk, however large heat generation limits the trapped field to significantly less than possible using field cooling. Modelling has been used to show that effective heat removal from the bulk interior, using embedded metallic structures, can enhance trapped field by increasing thermal stability. The reported results are for experimental pulsed magnetization of a thin walled YBCO sample with 55 vertical holes embedded with high thermal conductivity wires. A specially designed copper coldhead was used to increase the trapped field and flux of the perforated YBCO by about 12% at 35 K using a multi-pulse magnetization. Moreover, by filling the perforations with copper, the central trapped field was enhanced by 15% after a single-pulse at 35 K. 3D FEM computer model of a perforated YBCO bulk was also developed showing localised heating effects around the perforations during pulse magnetisation.

  11. Phantom dark energy as an effect of bulk viscosity

    CERN Document Server

    Velten, Hermano; Meng, Xinhe

    2013-01-01

    In a homogeneous and isotropic universe bulk viscosity is the unique viscous effect capable to modify the background dynamics. Effects like shear viscosity or heat conduction can only change the evolution of the perturbations. The existence of a bulk viscous pressure in a fluid, which in order to obey to the second law of thermodynamics is negative, reduces its effective pressure. We discuss in this study the degeneracy in bulk viscous cosmologies and address the possibility that phantom dark energy cosmology could be caused by the existence of non-equilibrium pressure in any cosmic component. We establish the conditions under which either matter or radiation viscous cosmologies can be mapped into the phantom dark energy scenario with constraints from multiple observational data-sets

  12. Spherically symmetric brane spacetime with bulk f(R) gravity

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, Sumanta [IUCAA, Ganeshkhind, Pune University Campus, Post Bag 4, Pune (India); SenGupta, Soumitra [Indian Association for the Cultivation of Science, Department of Theoretical Physics, Kolkata (India)

    2015-01-01

    Introducing f(R) term in the five-dimensional bulk action we derive effective Einstein's equation on the brane using Gauss-Codazzi equation. This effective equation is then solved for different conditions on dark radiation and dark pressure to obtain various spherically symmetric solutions. Some of these static spherically symmetric solutions correspond to black hole solutions, with parameters induced from the bulk. Specially, the dark pressure and dark radiation terms (electric part of Weyl curvature) affect the brane spherically symmetric solutions significantly. We have solved for one parameter group of conformal motions where the dark radiation and dark pressure terms are exactly obtained exploiting the corresponding Lie symmetry. Various thermodynamic features of these spherically symmetric space-times are studied, showing existence of second order phase transition. This phenomenon has its origin in the higher curvature term with f(R) gravity in the bulk. (orig.)

  13. Confined linear carbon chains as a route to bulk carbyne

    Science.gov (United States)

    Shi, Lei; Rohringer, Philip; Suenaga, Kazu; Niimi, Yoshiko; Kotakoski, Jani; Meyer, Jannik C.; Peterlik, Herwig; Wanko, Marius; Cahangirov, Seymur; Rubio, Angel; Lapin, Zachary J.; Novotny, Lukas; Ayala, Paola; Pichler, Thomas

    2016-06-01

    Strong chemical activity and extreme instability in ambient conditions characterize carbyne, an infinite sp1 hybridized carbon chain. As a result, much less has been explored about carbyne as compared to other carbon allotropes such as fullerenes, nanotubes and graphene. Although end-capping groups can be used to stabilize carbon chains, length limitations are still a barrier for production, and even more so for application. We report a method for the bulk production of long acetylenic linear carbon chains protected by thin double-walled carbon nanotubes. The synthesis of very long arrangements is confirmed by a combination of transmission electron microscopy, X-ray diffraction and (near-field) resonance Raman spectroscopy. Our results establish a route for the bulk production of exceptionally long and stable chains composed of more than 6,000 carbon atoms, representing an elegant forerunner towards the final goal of carbyne’s bulk production.

  14. Theoretical expectations for bulk flows in large scale surveys

    CERN Document Server

    Feldman, H A; Hume A Feldman; Richard Watkins

    1993-01-01

    We calculate the theoretical expectation for the bulk motion of a large scale survey of the type recently carried out by Lauer and Postman. Included are the effects of survey geometry, errors in the distance measurements, clustering properties of the sample, and different assumed power spectra. We consider the power spectrum calculated from the IRAS-QDOT survey, as well as spectra from hot + cold and standard cold dark matter models. We find that sparse sampling and clustering can lead to an unexpectedly large bulk flow, even in a very deep survey. Our results suggest that the expected bulk motion is inconsistent with that reported by Lauer and Postman at the 90-94% confidence level.

  15. Preparation of bulk superhard B-C-N nanocomposite compact

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yusheng (Los Alamos, NM); He, Duanwei (Sichuan, CN)

    2011-05-10

    Bulk, superhard, B--C--N nanocomposite compacts were prepared by ball milling a mixture of graphite and hexagonal boron nitride, encapsulating the ball-milled mixture at a pressure in a range of from about 15 GPa to about 25 GPa, and sintering the pressurized encapsulated ball-milled mixture at a temperature in a range of from about 1800-2500 K. The product bulk, superhard, nanocomposite compacts were well sintered compacts with nanocrystalline grains of at least one high-pressure phase of B--C--N surrounded by amorphous diamond-like carbon grain boundaries. The bulk compacts had a measured Vicker's hardness in a range of from about 41 GPa to about 68 GPa.

  16. Theoretical expectations for bulk flows in large-scale surveys

    Science.gov (United States)

    Feldman, Hume A.; Watkins, Richard

    1994-01-01

    We calculate the theoretical expectation for the bulk motion of a large-scale survey of the type recently carried out by Lauer and Postman. Included are the effects of survey geometry, errors in the distance measurements, clustering properties of the sample, and different assumed power spectra. We considered the power spectrum calculated from the Infrared Astronomy Satellite (IRAS)-QDOT survey, as well as spectra from hot + cold and standard cold dark matter models. We find that measurement uncertainty, sparse sampling, and clustering can lead to a much larger expectation for the bulk motion of a cluster sample than for the volume as a whole. However, our results suggest that the expected bulk motion is still inconsistent with that reported by Lauer and Postman at the 95%-97% confidence level.

  17. Bulk Locality from Entanglement in Gauge/Gravity Duality

    CERN Document Server

    Lin, Jennifer

    2015-01-01

    Gauge/gravity duality posits an equivalence between certain strongly coupled quantum field theories and theories of gravity with negative cosmological constant in a higher number of spacetime dimensions. The map between the degrees of freedom on the two sides is non-local and incompletely understood. I describe recent work towards characterizing this map using entanglement in the QFT, where near the dual AdS boundary, the classical energy density at a point in the bulk is stored in the relative entropies of boundary subregions whose homologous minimal surfaces pass through the bulk point. I also derive bulk classical energy conditions near the AdS boundary from entanglement inequalities in the CFT. This is based on the paper [1] with Matilde Marcolli, Hirosi Ooguri and Bogdan Stoica. More generally, in recent years, there has appeared some evidence that quantum entanglement is responsible for the emergence of spacetime. I review and comment on the state of these developments.

  18. Retrieving HapMap Data via Bulk Download.

    Science.gov (United States)

    Smith, Albert Vernon

    2008-07-01

    INTRODUCTIONThe primary goal of the International Haplotype Map Project has been to develop a haplotype map of the human genome that describes the common patterns of genetic variation, in order to accelerate the search for the genetic causes of human disease. Within the project, ~3.9 million distinct single-nucleotide polymorphisms (SNPs) have been genotyped in 270 individuals from four worldwide populations. The project data are available for unrestricted public use at the HapMap Web site. This site, which is the primary portal to genotype data produced by the project, offers bulk downloads of the data set, as well as interactive data browsing and analysis tools that are not available elsewhere. Bulk downloads of chromosome- or genome-wide data provide text dumps of the entire HapMap data set. Although complete, such downloads do not provide any filtering or selection services. This protocol describes the retrieval of HapMap data via bulk download.

  19. Causal Evolutions of Bulk Local Excitations from CFT

    CERN Document Server

    Goto, Kanato; Takayanagi, Tadashi

    2016-01-01

    Bulk localized excited states in an AdS spacetime can be constructed from Ishibashi states with respect to the global conformal symmetry in the dual CFT. We study boundary two point functions of primary operators in the presence of bulk localized excitations in two dimensional CFTs. From two point functions in holographic CFTs, we observe causal propagations of radiations when the mass of dual bulk scalar field is close to the BF bound. This behavior for holographic CFTs is consistent with the locality and causality in classical gravity duals. We also show that this cannot be seen in free fermion CFTs. Moreover, we find that the short distance behavior of two point functions is universal and obeys the relation which generalizes the first law of entanglement entropy.

  20. Large-scale HTS bulks for magnetic application

    Energy Technology Data Exchange (ETDEWEB)

    Werfel, Frank N., E-mail: werfel@t-online.de [Adelwitz Technologiezentrum GmbH (ATZ), Rittergut Adelwitz 16, 04886 Arzberg-Adelwitz (Germany); Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter [Adelwitz Technologiezentrum GmbH (ATZ), Rittergut Adelwitz 16, 04886 Arzberg-Adelwitz (Germany)

    2013-01-15

    Highlights: ► ATZ Company has constructed about 130 HTS magnet systems. ► Multi-seeded YBCO bulks joint the way for large-scale application. ► Levitation platforms demonstrate “superconductivity” to a great public audience (100 years anniversary). ► HTS magnetic bearings show forces up to 1 t. ► Modular HTS maglev vacuum cryostats are tested for train demonstrators in Brazil, China and Germany. -- Abstract: ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN{sub 2} and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500–3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN{sub 2} allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved.