Sample records for bulk semi-insulating inp

  1. Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP

    CERN Document Server

    Dubecky, F; Necas, V; Sekacova, M; Fornari, R; Gombia, E; Bohácek, P; Krempasky, M; Pelfer, P G


    In this work, bulk semi-insulating (SI) InP wafers of four various producers have been used for the fabrication of radiation detectors. The tested detectors were prepared starting from the different materials in just one run in order to be sure that their performances were not influenced by technological processes. On one type of material various electrode technologies were used with the aim to analyze their role on the detector performances. The fabricated detectors were tested for detection performance by the sup 2 sup 4 sup 1 Am and sup 5 sup 7 Co gamma-ray sources at below room temperature. The best detector was calibrated and tested also using sup 1 sup 3 sup 3 Ba and sup 1 sup 3 sup 7 Cs gamma sources. The best detector gives an energy resolution of 7 keV FWHM and a charge collection efficiency (CCE) of 82% (59.5 keV photopeak) at a temperature of 216 K. According to our knowledge, these results are the best which have been obtained with InP radiation detectors till now. The operation of SI InP detector...

  2. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.


    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  3. Two-photon photoluminescence and second-harmonic generation from unintentionally doped and semi-insulating GaN crystals (United States)

    Godiksen, R. H.; Aunsborg, T. S.; Kristensen, P. K.; Pedersen, K.


    Unintentionally doped and semi-insulating Fe-doped GaN crystals grown by hydride vapor phase epitaxy have been investigated with two-photon photoluminescence and second-harmonic generation spectroscopy to reveal doping effects on the nonlinear optical properties and thus indirectly on crystal properties. Like for linear luminescence, it is found that Fe doping strongly reduces nonlinear luminescence. Recording of second-harmonic generation spectra in transmission probing bulk properties shows no significant difference between doped and un-doped crystals. Reflected second-harmonic generation probing 50-100 nm at the surface, on the other hand, shows significantly lower signal from the doped sample. Secondary ion mass spectroscopy shows that the Fe concentration is higher at the surface than in the bulk of the doped crystal. It is suggested that this causes higher defect density and degraded order in the surface region, thus reducing the second-harmonic signal.

  4. High quality InP and In sub 1-x Ga sub x As sub y P sub 1-y grown by gas source MBE

    Energy Technology Data Exchange (ETDEWEB)

    Lambert, M.; Goldstein, L.; Perales, A.; Gaborit, F.; Starck, C.; Lievin, J.L. (Labs. de Marcoussis, 91 (France))


    The growth of high quality InP and In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} by gas source molecular beam epitaxy is reported. 77 K mobilities up to 112,000 cm{sup 2}/V.s for high purity InP have been measured. Fe-doped semi-insulating InP has been grown using an iron effusion cell, and resistivities as high as 10{sup 9} {Omega} cm have been obtained. Selective epitaxy of InP on Si{sub 3}N{sub 4}-patterned substrates is also presented. (orig.).

  5. High energy oxygen irradiation-induced defects in Fe-doped semi-insulating indium phosphide by positron annihilation technique (United States)

    Pan, S.; Mandal, A.; Sohel, Md. A.; Saha, A. K.; Das, D.; Sen Gupta, A.


    Positron annihilation technique is applied to study the recovery of radiation-induced defects in 140 MeV oxygen (O6+) irradiated Fe-doped semi-insulating indium phosphide during annealing over a temperature region of 25∘C-650∘C. Lifetime spectra of the irradiated sample are fitted with three lifetime components. Trapping model analysis is used to characterize defect states corresponding to the de-convoluted lifetime values. After irradiation, the observed average lifetime of positron τavg = 263 ps at room temperature is higher than the bulk lifetime by 21 ps which reveals the presence of radiation-induced defects in the material. A decrease in τavg occurs during room temperature 25∘C to 200∘C indicating the dissociation of higher order defects, might be due to positron trapping in acceptor-type of defects (VIn). A reverse annealing stage is found at temperature range of 250∘C-425∘C for S-parameter probably due to the migration of vacancies and the formation of vacancy clusters. Increase in R-parameter from 325∘C to 425∘C indicates the change in the nature of predominant positron trapping sites. Beyond 425∘C, τavg, S-parameter and R-parameter starts decreasing and around 650∘C, τavg and S-parameter approached almost the bulk value showing the annealing out of radiation-induced defects.

  6. Calculation of transport parameters of gamma-radiation detectors based on semi-insulating semiconductors

    Directory of Open Access Journals (Sweden)

    Zakharchenko A. A.


    Full Text Available A method of fast determination of the high resistivity detector charge collection parameters with the use of the detector dosimetric characteristics and by means of mathematical simulation is proposed. A problem of calculation of charge collection parameters is investigated for planar gamma-radiation dosimetric detectors made from semi-insulating compound semiconductor CdTe (CdZnTe. An applicability of the considered method is verified by computer simulation for HgI2 gamma-radiation detectors. The considered method can be used in the development of both dosimetry and spectrometry devices for radiation monitoring and for monitoring of characteristic devices operating in hard radiation fields. KEY WORDS: mobility, life time, semiconductor detectors, semi-insulating semiconductors, CdTe, CdZnTe, HgI2, Monte-Carlo method.

  7. Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: [Ioffe Institute (Russian Federation); Chaikina, E. I. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Division de Fisica Aplicada (Mexico); Danilovskii, E. Yu.; Gets, D. S.; Klyachkin, L. E.; L’vova, T. V.; Malyarenko, A. M. [Ioffe Institute (Russian Federation)


    The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.

  8. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K


    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  9. Performance characteristics of semi-insulator-and dielectric- passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K


    The harsh radiation environment in present and future high-energy physics experiments, such as the Large Hadron Collider (LHC), is a driving force for the development of high-voltage Si strip detectors. It is well known that mobile surface ions can affect the stability and long-term behaviour of Si detectors. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric- passivated metal-overhang structures are compared under optimal conditions. Influence of the salient design parameters such as field oxide thickness, junction depth, metal-overhang width, and the surface charge on the breakdown performance of these structures are systematically analyzed, thus providing a comprehensive picture of the behaviour of metal-ove...

  10. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch (United States)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue


    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  11. A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization

    Czech Academy of Sciences Publication Activity Database

    Dubecký, F.; Kindl, Dobroslav; Hubík, Pavel; Mičušík, M.; Dubecký, M.; Boháček, P.; Vanko, G.; Gombia, E.; Nečas, V.; Mudroň, J.


    Roč. 395, Feb (2017), s. 131-135 ISSN 0169-4332 Institutional support: RVO:68378271 Keywords : semi-insulating GaAs * metal-semiconductor contact * interface * work function * electron transport * XPS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

  12. Influence of substrate on the performances of semi-insulating GaAs detectors

    CERN Document Server

    Baldini, R; Nava, F; Canali, C; Lanzieri, C


    A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

  13. Noise behaviour of semi-insulating GaAs particle detectors before and after proton irradiation

    CERN Document Server

    Biggeri, U; Lanzieri, C; Leroy, C; Nava, F; Vanni, P


    Charge signal and noise were studied in non-irradiated and irradiated Schottky barrier, circular pad detectors of 100 mu m thick made on semi-insulating gallium arsenide at Alenia S.p.A., as a function of the reverse bias (V/sub a/), the shaping time ( tau ) and the fluence (f), for minimum ionising electrons yielded by a /sup 106/Ru source. The detectors have been irradiated with protons (energy 24 GeV) up to a fluence of about 2*10/sup 14/ p/cm/sup 2/. A charge signal degradation is observed for irradiated detectors. The charge signals for MIP's at 500 V are reduced from 12900 electrons before irradiation to 6600 electrons after about 2*10/sup 14/ p/cm/sup 2/ at a temperature of 7 degrees C and with a shaping time of 20 ns, typical of LHC inter-bunch crossing time (25 ns). The charge signal is found independent of tau for full depletion condition (V/sub a/>or =100 V). The measurement of the charge signal as a function of V/sub a/ shows that the full depletion voltage decreases from 100 V for non-irradiated ...

  14. Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Yue; Lu, Wu-yue; Wang, Tao; Chen, Zhi-zhan, E-mail: [Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234 (China)


    The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρ{sub c}) is 1.97 × 10{sup −3} Ω·cm{sup 2}, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA, which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.

  15. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN (United States)

    Hou, Qi-Feng; Wang, Xiao-Liang; Xiao, Hong-Ling; Wang, Cui-Mei; Yang, Cui-Bai; Yin, Hai-Bo; Li, Jin-Min; Wang, Zhan-Guo


    Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35 eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

  16. High-speed photodiffractive effect in semi-insulating CdZnTe/ZnTe multiple quantum wells. (United States)

    Partovi, A; Glass, A M; Olson, D H; Zydzik, G J; Short, K T; Feldman, R D; Austin, R F


    Single-pulse and cw measurements of the response of a semi-insulating CdZnTe/ZnTe multiple-quantum-well photorefractive device are presented. In single-pulse experiments, photodiffractive (absorption) gratings have been written with less than 1.8-microJ/cm(2) incident fluence, and a diffraction efficiency of 1.1% is obtained from the 1.56-microm active layer of the device. With an optimized structure, the ultimate response time of the device can be below 100 ps. In cw measurements a maximum diffraction efficiency of 1.35% is obtained.

  17. Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

    Directory of Open Access Journals (Sweden)

    Kai-li MAO


    Full Text Available Because the conditions under which semi-insulating 4H-SiC crystals can grow are so specific, other polytypes such as 15R and 6H can easily emerge during the growth process. In this work, a polytype stabilization technology was developed by altering the following parameters: growth temperature, temperature field distribution, and C/Si ratio. In the growth process of high-purity semi-insulating 4H-SiC crystals, the generation of undesirable polytypes was prevented, and a crystal 100 % 4H-SiC polytype was obtained. A high C/Si ratio in powder source was shown to be advantageous for the stabilization of the 4H polytype. Several methods were applied to evaluate the quality of crystals precisely; these methods include Raman mapping, X-ray diffraction, and resistivity mapping. Results showed that the 3inch-wafer was entirely made of 4H polytype, the mean value of FWHM was approximately 40 arcsec, and the distribution of the resistivity value was between 106 Ω×cm and 107 Ω×cm.DOI:

  18. Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

    Directory of Open Access Journals (Sweden)

    Domenico Melisi


    Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

  19. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    Energy Technology Data Exchange (ETDEWEB)

    Pousset, J.; Farella, I.; Cola, A., E-mail: [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)


    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  20. Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer (United States)

    Kim, Hyoung Woo; Seok, Ogyun; Moon, Jeong Hyun; Bahng, Wook; Jo, Jungyol


    4H-SiC lateral double implanted metal–oxide–semiconductor field effect transistors (LDIMOSFET) were fabricated on on-axis semi-insulating SiC substrates without using an epi-layer. The LDIMOSFET adopted a current path layer (CPL), which was formed by ion-implantation. The CPL works as a drift region between gate and drain. By using on-axis semi-insulating substrate and optimized CPL parameters, breakdown voltage (BV) of 1093 V and specific on-resistance (R on,sp) of 89.8 mΩ·cm2 were obtained in devices with 20 µm long CPL. Experimentally extracted field-effect channel mobility was 21.7 cm2·V‑1·s‑1 and the figure-of-merit (BV2/R on,sp) was 13.3 MW/cm2.

  1. A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization

    Energy Technology Data Exchange (ETDEWEB)

    Dubecký, F., E-mail: [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Kindl, D.; Hubík, P. [Institute of Physics CAS, v.v.i., Cukrovarnická 10, CZ-16200 Prague (Czech Republic); Mičušík, M. [Polymer Institute, SAS, Dúbravská cesta 9, Bratislava, SK-84541 (Slovakia); Dubecký, M. [Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, CZ-70103 Ostrava 1 (Czech Republic); Boháček, P.; Vanko, G. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Gombia, E. [IMEM-CNR, Parco area delle Scienze 37/A, Parma, I-43010 (Italy); Nečas, V. [Faculty of Electrical Engineering and Information Technology, SUT, Ilkovičova 3, Bratislava, SK-81219 (Slovakia); Mudroň, J. [Department of Electronics, Academy of Armed Forces, Demänová 393, Liptovský Mikuláš, SK-03106 (Slovakia)


    Highlights: • Explored were diodes with full-area low/high work function metal contacts on semi-insulating GaAs (S). • The Mg-S-Mg diode is promising for radiation detectors for its low high-field current. • The XPS analysis of Mg-S interface shows presence of MgO instead of Mg metal. - Abstract: We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional high work function Pt contact versus the less explored low work function Mg contact. The Pt-S-Pt, Mg-S-Mg and mixed Mg-S-Pt structures are characterized by the current-voltage measurements, and individual Pt-S and Mg-S contacts are investigated by the X-ray photoelectron spectroscopy (XPS). The transport measurements of Mg-S-Pt structure show a significant current decrease at low bias while the Mg-S-Mg structure shows saturation current at high voltages more than an order of magnitude lower with respect to the Pt-S-Pt reference. The phenomena observed in Mg-containing samples are explained by the presence of insulating MgO layer at the M-S interface, instead of the elementary Mg, as confirmed by the XPS analysis. Alternative explanations of the influence of MgO layer on the effective resistance of the structures are presented. The reported findings have potential applications in M-S-M sensors and radiation detectors based on SI GaAs.

  2. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.


    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  3. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)


    where α is the thermal diffusivity, a the slope of the graph connecting ln(f⋅S) and f , and l the thickness of the sample. Thermal conductivity (k) is then calculated using the relation κ = αρCp in units of W/m-K,. (5) where ρ is the density and Cp the specific heat capacity of bulk InP. The measured values of thermal diffusivity and.

  4. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.


    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  5. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment

    CERN Document Server

    Ivanco, J; Darmo, J; Krempasky, M; Besse, I; Senderak, R


    It is generally agreed that the substrate material quality plays a key role in the performance of back-to-back detectors of ionising radiation based on semi-insulating (SI) material. The aim of this paper is to evaluate usually overlooked problem, namely the influence of the Schottky contact preparation on detector performance. We report on different approaches to modify and control the quality of the metal/SI GaAs interface via a treatment of the SI-GaAs surface by means of low-temperature hydrogen plasma and wet etching. The measured electrical and detecting properties of such structures display a strong dependence on the history and the way the GaAs surface is treated prior to the metal evaporation. We point out, therefore, that the semiconductor surface treatment before the Schottky metallization plays a role of comparable importance to the influence of the SI-GaAs substrate properties on detector performances. (author)

  6. Wafer-scale processing technology for monolithically integrated GaSb thermophotovoltaic device array on semi-insulating GaAs substrate (United States)

    Kim, Jung Min; Dutta, Partha S.; Brown, Eric; Borrego, Jose M.; Greiff, Paul


    This paper presents the entire fabrication and processing steps necessary for wafer scale monolithic integration of series interconnected GaSb devices grown on semi-insulating GaAs substrates. A device array has been fabricated on complete 50 mm (2 inch) diameter wafer using standard photolithography, wet chemical selective etching, dielectric deposition and single-sided metallization. For proof of concept of the wafer-scale feasibility of this process, six large-area series interconnected GaSb p-n junction thermophotovoltaic cells with each cell consisting of 24 small-area devices have been fabricated and characterized for its electrical connectivity. The fabrication process presented in this paper can be used for optoelectronic and electronic device technologies based on GaSb and related antimonide based compound semiconductors.

  7. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate (United States)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.


    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  8. Ice-nucleating particles in Canadian Arctic sea-surface microlayer and bulk seawater (United States)

    Irish, Victoria E.; Elizondo, Pablo; Chen, Jessie; Chou, Cédric; Charette, Joannie; Lizotte, Martine; Ladino, Luis A.; Wilson, Theodore W.; Gosselin, Michel; Murray, Benjamin J.; Polishchuk, Elena; Abbatt, Jonathan P. D.; Miller, Lisa A.; Bertram, Allan K.


    The sea-surface microlayer and bulk seawater can contain ice-nucleating particles (INPs) and these INPs can be emitted into the atmosphere. Our current understanding of the properties, concentrations, and spatial and temporal distributions of INPs in the microlayer and bulk seawater is limited. In this study we investigate the concentrations and properties of INPs in microlayer and bulk seawater samples collected in the Canadian Arctic during the summer of 2014. INPs were ubiquitous in the microlayer and bulk seawater with freezing temperatures in the immersion mode as high as -14 °C. A strong negative correlation (R = -0. 7, p = 0. 02) was observed between salinity and freezing temperatures (after correction for freezing depression by the salts). One possible explanation is that INPs were associated with melting sea ice. Heat and filtration treatments of the samples show that the INPs were likely heat-labile biological materials with sizes between 0.02 and 0.2 µm in diameter, consistent with previous measurements off the coast of North America and near Greenland in the Arctic. The concentrations of INPs in the microlayer and bulk seawater were consistent with previous measurements at several other locations off the coast of North America. However, our average microlayer concentration was lower than previous observations made near Greenland in the Arctic. This difference could not be explained by chlorophyll a concentrations derived from satellite measurements. In addition, previous studies found significant INP enrichment in the microlayer, relative to bulk seawater, which we did not observe in this study. While further studies are needed to understand these differences, we confirm that there is a source of INP in the microlayer and bulk seawater in the Canadian Arctic that may be important for atmospheric INP concentrations.

  9. Ice-nucleating particles in Canadian Arctic sea-surface microlayer and bulk seawater

    Directory of Open Access Journals (Sweden)

    V. E. Irish


    Full Text Available The sea-surface microlayer and bulk seawater can contain ice-nucleating particles (INPs and these INPs can be emitted into the atmosphere. Our current understanding of the properties, concentrations, and spatial and temporal distributions of INPs in the microlayer and bulk seawater is limited. In this study we investigate the concentrations and properties of INPs in microlayer and bulk seawater samples collected in the Canadian Arctic during the summer of 2014. INPs were ubiquitous in the microlayer and bulk seawater with freezing temperatures in the immersion mode as high as −14 °C. A strong negative correlation (R = −0. 7, p = 0. 02 was observed between salinity and freezing temperatures (after correction for freezing depression by the salts. One possible explanation is that INPs were associated with melting sea ice. Heat and filtration treatments of the samples show that the INPs were likely heat-labile biological materials with sizes between 0.02 and 0.2 µm in diameter, consistent with previous measurements off the coast of North America and near Greenland in the Arctic. The concentrations of INPs in the microlayer and bulk seawater were consistent with previous measurements at several other locations off the coast of North America. However, our average microlayer concentration was lower than previous observations made near Greenland in the Arctic. This difference could not be explained by chlorophyll a concentrations derived from satellite measurements. In addition, previous studies found significant INP enrichment in the microlayer, relative to bulk seawater, which we did not observe in this study. While further studies are needed to understand these differences, we confirm that there is a source of INP in the microlayer and bulk seawater in the Canadian Arctic that may be important for atmospheric INP concentrations.

  10. AlGaInAs quantum-well lasers with semi-insulating buried-heterostructure for high-speed direct modulation up to 40 Gbps (United States)

    Otsubo, K.; Matsuda, M.; Takada, K.; Okumura, S.; Uetake, A.; Ekawa, M.; Yamamoto, T.


    We introduce our recent works on directly-modulated AlGaInAs quantum-well lasers with semi-insulating buriedheterostructure for ultra-high-speed transmission. The short-cavity 1.3-μm-wavelength DFB lasers showed low-penalty transmission up to 13 km under direct modulation at 25 Gbps, as well as clearly-opened eye patterns by 40-Gbps direct modulation. For further reduction of driving current in the high-speed directly-modulated lasers, we developed the distributed reflector lasers with the active-region having the length of 100 μm or less, sandwiched by the passive reflectors. The fabricated distributed reflector lasers exhibited very high slope value of relaxation oscillation frequency of 4.0 GHz/mA1/2 and more. The distributed reflector lasers emitting in 1.3-μm wavelength region achieved 40-Gbps direct modulation with the driving current of 2/3 of that by the DFB lasers. By the distributed reflector lasers of 1.55- μm-wavelength, high temperature 40-Gbps operation was realized as well as reduction of driving current.

  11. Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures (United States)

    Cordier, Y.; Azize, M.; Baron, N.; Bougrioua, Z.; Chenot, S.; Tottereau, O.; Massies, J.; Gibart, P.


    The regrowth of AlGaN/GaN high electron mobility transistor (HEMT) structures on semi-insulating (SI) GaN templates, after exposure to air, results in the presence of parasitic conducting channels at regrowth interface (RI). Air contamination of the SI GaN templates is responsible for n-type doping and explains this parallel conduction. The parasitic conducting channel results in poor pinch-off characteristics ( Ileakage˜1 mA/mm at bias gate-source voltage above pinch-off voltage) and poor inter-device isolation and makes necessary to equip reactors with acceptor sources to compensate the n-type doping at the RI. To overcome this, we developed a new method of local Fe doping used in GaN templates for inhibiting RI pollution and proved to be efficient. Using this annihilation method permits to reduce by several orders of magnitude buffer leakage current. Such HEMT structures regrown by metalorganic vapor phase epitaxy (MOVPE) or by molecular beam epitaxy (MBE) exhibit two-dimensional electron gas (2DEG) with 300 K mobilities above 2000 cm 2/V s at carrier densities 9-10×10 12 cm -2 with a perfect charge control.

  12. Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates (United States)

    Azize, M.; Bougrioua, Z.; Gibart, P.


    AlGaN/GaN high-electron mobility transistors (HEMTs) structures regrown by metalorganic vapour phase epitaxy (MOVPE) on semi-insulating (SI) GaN templates, after exposure to air, results in the presence of parasitic conducting channels at regrowth interface. Air contamination of the SI GaN templates generates this parallel conduction. The parasitic conducting channel involves poor pinch-off characteristics ( Ileakage˜0.1 mA at bias gate-source voltage above pinch off voltage) and poor inter-device isolation ( Ileakage˜0.001-0.1 mA). To overcome this, we developed a method of local Fe doping used in GaN templates for inhibiting regrowth interface pollution and proved to be efficient. Using this annihilation method permits to reduce 4-5 orders of magnitude buffer leakage current ( Ileakage˜ nA). Such HEMTs structures, with perfect charge control, have exhibited two-dimensional electron gas (2DEGs) with 300 K mobilities above 2000 cm 2 V -1 s -1 at carrier densities 9×10 12 cm -2.

  13. Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)


    This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Minority-carrier lifetime in InP as a function of light bias (United States)

    Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.


    Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

  15. Surface chemistry of InP quantum dots: a comprehensive study. (United States)

    Cros-Gagneux, Arnaud; Delpech, Fabien; Nayral, Céline; Cornejo, Alfonso; Coppel, Yannick; Chaudret, Bruno


    Advanced (1)H, (13)C, and (31)P solution and solid-state NMR studies combined with IR spectroscopy were used to probe, at the molecular scale, the composition and the surface chemistry of indium phosphide (InP) quantum dots (QDs) prepared via a non-coordinating solvent strategy. This nanomaterial can be described as a core-multishell object: an InP core, with a zinc blende bulk structure, is surrounded first by a partially oxidized surface shell, which is itself surrounded by an organic coating. This organic passivating layer is composed, in the first coordination sphere, of tightly bound palmitate ligands which display two different bonding modes. A second coordination sphere includes an unexpected dialkyl ketone and residual long-chain non-coordinating solvents (ODE and its isomers) which interact through weak intermolecular bonds with the alkyl chains of the carboxylate ligands. We show that this ketone is formed during the synthesis process via a decarboxylative coupling route and provides oxidative conditions which are responsible for the oxidation of the InP core surface. This phenomenon has a significant impact on the photoluminescence properties of the as-synthesized QDs and probably accounts for the failure of further growth of the InP core.

  16. THz conductivity of semi-insulating and magnetic CoFe2O4 nano-hollow structures through thermally activated polaron (United States)

    Rakshit, Rupali; Serita, Kazunori; Tonouchi, Masayoshi; Mandal, Kalyan


    Herein, terahertz (THz) time domain spectroscopy is used to measure the complex conductivity of semi-insulating CoFe2O4 nanoparticles (NPs) and nano-hollow spheres (NHSs) with different diameters ranging from 100 to 350 nm having a nanocrystalline shell thickness of 19 to 90 nm, respectively. Interestingly, the magnitude of conductivity for CoFe2O4 NPs and NHSs of same average diameter (˜100 nm) for a given frequency of 0.3 THz is found to be 0.33 S/m and 9.08 S/m, respectively, indicating that the hollow structure exhibits greater THz conduction in comparison to its solid counterpart. Moreover, THz conductivity can be tailored by varying the nano-shell thickness of NHSs, and a maximum conductivity of 15.61 S/m is observed at 0.3 THz for NHSs of average diameter 250 nm. A detailed study reveals that thermally activated polaronic hopping plays the key role in determining the electrical transport property of CoFe2O4 nanostructures, which is found to solely depend on their magnitude of THz absorptivity. The non-Drude conductivity of all CoFe2O4 nanostructures is well described by the Polaron model instead of the Drude-Smith model, which is relevant for backscattering of free electrons in a nanostructured material. The Polaron model includes intra-particle and interparticle polaronic conductivities for closely spaced magnetic nanostructures and provides a mean free path of 29 nm for CoFe2O4 NPs of diameter 100 nm, which is comparable with its average crystallite size, indicating the applicability of the developed model for nanomaterials where charge transport is determined by polaronic hopping. Finally, we have demonstrated the morphology and size dependent magnetic measurements of ferrimagnetically aligned CoFe2O4 nanostructures through a vibrating sample magnetometer in the temperature range of 80-250 K, revealing that the disordered surface spin layer of nanostructures significantly controls their magnetism.

  17. Influence of growth conditions on the performance of InP nanowire solar cells (United States)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A.; Plissard, Sebastien R.; Wang, Jia; Koenraad, Paul M.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.


    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  18. Encapsulation and Implantation Studies of InP. (United States)


    ENCAPSULATION AND IMPLANTATION STUDIES OF InP Technical Report 6. PERFORMING OnRG PR NMC R-958; UILU-ENG 82-2224 7. AUTNOR(s) 6. CONTRACT OR GRANT NUMSER( is a weak reaction of Si with InP. The lack of adequate entropy data - prevented them from taking into account the temperature dependent entropy

  19. A conserved function for Inp2 in peroxisome inheritance

    NARCIS (Netherlands)

    Saraya, Ruchi; Cepinska, Malgorzata N.; Kiel, Jan A. K. W.; Veenhuis, Marten; van der Klei, Ida J.; Cepińska, Małgorzata N.

    In budding yeast Saccharomyces cerevisiae, the peroxisomal protein Inp2 is required for inheritance of peroxisomes to the bud, by connecting the organelles to the motor protein Myo2 and the actin cytoskeleton. Recent data suggested that the function of Inp2 may not be conserved in other yeast

  20. Quantum size effects in InP inner film fiber (United States)

    Wang, Ting-Yun; Wang, Ke-Xin; Lu, Jun


    Based on the semiconductor amplifiing properties and the structure of optical fiber wave guide an InP inner fiber is developed. The InP inner film fiber can be employed as a small size, broadband, and ultra-short fiber amplifier. The quantum size effects of the fiber are emphatically investigated in the work. Using the experimental data, we compare the effective mass approximation (EMA) with effective parameterization within the tight binding (EPTB) models for the accurate description of the quantum size effects in InP. The results show that the EPTB model provides an excellent description of band gap variation over a wide range of sizes. The Bohr diameter and the effective Rydberg energy of InP are calculated. Finally, the amplifiing properties of the InP inner film fiber are discussed due to the quantum size effects.

  1. Lightweight InP Solar Cells for Space Applications Project (United States)

    National Aeronautics and Space Administration — The innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, InP based compound semiconductor...

  2. Lightweight InP Solar Cells for Space Applications Project (United States)

    National Aeronautics and Space Administration — The innovation in this Phase II SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, high radiation resistance InP...

  3. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard


    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  4. Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy (United States)

    De Luca, Marta; Polimeni, Antonio


    Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as building components of novel devices. The presence of wurtzite (WZ) phase in the lattice structure of non-nitride III-V NWs is one of the most surprising findings in these nanostructures: this phase, indeed, cannot be found in the same materials in the bulk form, where the zincblende (ZB) structure is ubiquitous, and therefore the WZ properties are poorly known. This review focuses on WZ InP NWs, because growth techniques have reached a high degree of control on the structural properties of this material, and optical studies performed on high-quality samples have allowed determining the most useful electronic properties, which are reviewed here. After an introduction summarizing the reasons for the interest in WZ InP nanowires (Sec. I), we give an overview on growth process and structural and optical properties of WZ InP NWs (Sec. II). In Sec. III, a complete picture of the energy and symmetry of the lowest-energy conduction and valence bands, as assessed by polarization-resolved photoluminescence (PL) and photoluminescence-excitation (PLE) studies is drawn and compared to all the available theoretical information. The elastic properties of WZ InP (determined by PL under hydrostatic pressure) and the radiative recombination dynamics of spatially direct and indirect (namely, occurring across the WZ/ZB interfaces) transitions are also discussed. Section IV, focuses on the magneto-optical studies of WZ InP NWs. The diagram of the energy levels of excitons in WZ materials—with and without magnetic field—is first provided. Then, all theoretical and experimental information available about the changes in the transport properties (i.e., carrier effective mass) caused by the ZB→WZ phase variation are reviewed. Different NW/magnetic field geometrical configurations, sensitive to polarization selection rules, highlight anisotropies in the diamagnetic shifts, Zeeman splitting

  5. A contribution for the detection of deep defects in semi-insulating GaAs by means of PICTS; Ein Beitrag zum Nachweis tiefer Stoerstellen in halbisolierendem GaAs mittels PICTS

    Energy Technology Data Exchange (ETDEWEB)

    Zychowitz, G.


    The PICTS procedure is one of the most frequently applied methods for the characterization of semi-insulating semiconductors. The methodical progresses in the determination of defect parameters by this proceudure are presented in this thesis. as practicable method for the detection of a temperature-dependent change of the occupation ratio of a trap the normation of the PICTS spectra on the emission rate of the electrons is introduced. It is shown that peaks, in which this normation fails, must not applied for the determination of the defect parameters. The studies prove that for the complete charge-alteration of the defects a suitable excitation intensity must be applied. By PICTS measurements on copper-doped samples a systematic dependence of the peak heights of copper-correlated peaks on the copper content of the samples is detected. By the studies it is proved that copper can be detected by means of PICTS up to a minimal AES copper concentration of [Cu{sub min}]approx5.10{sup 14} cm{sup -3}.

  6. Absorption enhancement by textured InP in solar cells (United States)

    Yun, Seokhun; Ji, Taeksoo


    III-V compound semiconductors seem to be the ideal materials for photovoltaic devices because they exhibit fast carrier velocity. III-V compound semiconductors, however, are unfavorable materials to be commercialized on large scale photovoltaic devices because of their high material cost. The textured surface shows the potential to increase the performance of solar cells because of the properties such as high absorption and longer light path length. These properties can overcome the disadvantage of the III-V compound semiconductors through thin thickness use when producing solar cells. In this study, we demonstrate that textured surfaces on InP formed by nano-sphere lithography and plasma etching process can enhance the absorption effectively in comparison with planar surface. The power conversion efficiency of InP solar cells using the textured InP and the aluminum doped zinc oxide was achieved up to 8%.

  7. Graphene enhanced field emission from InP nanocrystals (United States)

    Iemmo, L.; Di Bartolomeo, A.; Giubileo, F.; Luongo, G.; Passacantando, M.; Niu, G.; Hatami, F.; Skibitzki, O.; Schroeder, T.


    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler–Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  8. Graphene enhanced field emission from InP nanocrystals. (United States)

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T


    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  9. Lateral spreading of Au contacts on InP (United States)

    Fatemi, Navid S.; Weizer, Victor G.


    The contact spreading phenomenon observed when small area Au contacts on InP are annealed at temperatures above about 400 C was investigated. It was found that the rapid lateral expansion of the contact metallization which consumes large quantities of InP during growth is closely related to the third stage in the series of solid state reactions that occur between InP and Au, i.e., to the Au3In-to-Au9In4 transition. Detailed descriptions are presented of both the spreading process and the Au3In-to-Au9In4 transition along with arguments that the two processes are manifestations of the same basic phenomenon.

  10. Comparative modeling of InP solar cell structures (United States)

    Jain, R. K.; Weinberg, I.; Flood, D. J.


    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  11. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel


    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  12. Solvothermal synthesis of InP quantum dots. (United States)

    Nag, Angshuman; Sarma, D D


    We report an efficient and fast solvothermal route to prepare highly crystalline monodispersed InP quantum dots. This solvothermal route, not only ensures inert atmosphere, which is strictly required for the synthesis of phase pure InP quantum dots but also allows a reaction temperature as high as 430 degrees C, which is otherwise impossible to achieve using a typical solution chemistry; the higher reaction temperature makes the reaction more facile. This method also has a judicious control over the size of the quantum dots and thus in tuning the bandgap.

  13. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    Directory of Open Access Journals (Sweden)

    Pranab Biswas


    Full Text Available The diffusion behavior of arsenic (As and gallium (Ga atoms from semi-insulating GaAs (SI-GaAs into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 1018 cm−3 and 2.8 × 1019 cm−3 respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 1016 cm−3. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (AsZn–2VZn, by substituting Zn atoms (AsZn and thereby creating two zinc vacancies (VZn. Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, GaZn. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  14. Switching dynamics in InP photonic-crystal nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel


    In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

  15. 2D InP photonic crystal fabrication process development

    NARCIS (Netherlands)

    Rong, B.; Van der Drift, E.; Van der Heijden, R.W.; Salemink, H.W.M.


    We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and

  16. Experiences with digital processing of images at INPE (United States)

    Mascarenhas, N. D. A. (Principal Investigator)


    Four different research experiments with digital image processing at INPE will be described: (1) edge detection by hypothesis testing; (2) image interpolation by finite impulse response filters; (3) spatial feature extraction methods in multispectral classification; and (4) translational image registration by sequential tests of hypotheses.

  17. Competition between InP and In2O3 islands during the growth of InP on SrTiO3 (United States)

    Saint-Girons, G.; Regreny, P.; Cheng, J.; Patriarche, G.; Largeau, L.; Gendry, M.; Xu, G.; Robach, Y.; Botella, C.; Grenet, G.; Hollinger, G.


    A study of the growth of InP islands on SrTiO3 (STO) substrates is presented. The nature and crystal orientation of the islands strongly depend on the growth temperature: below 410 °C, both InP and In2O3 islands coexist, while InP islands alone are formed above this temperature. InP islands are randomly oriented in the low growth temperature range and adopt an equilibrium orientation defined by [111]InP∥[001]STO in the growth direction and [110]InP∥[100]STO in the growth plane between 410 and 475 °C. This study highlights the complexity of the growth of InP on STO, which results from a combined influence of interface chemistry and crystallographic properties as well as of the nucleation kinetics.

  18. Azimuthally polarized cathodoluminescence from InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Brenny, B. J. M.; Osorio, C. I.; Polman, A., E-mail: [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Dam, D. van [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Gómez Rivas, J. [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); FOM Institute DIFFER, P.O. Box 6336, 5600 HH Eindhoven (Netherlands)


    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  19. Cellular uptake of conjugated InP quantum dots (United States)

    Chibli, Hicham; Carlini, Lina; Ntumba, Kalonji; Nadeau, Jay


    Indium phosphide (InP) nanocrystals show similar absorbance and emission spectra to CdTe quantum dots, but unlike particles containing cadmium, may potentially be used in in vivo applications. However, the particles are more challenging to make water-soluble, show broader emission spectra than most quantum dots, and their behavior in living cells is largely unknown. In this work we solubilize InP nanocrystals with simple thiols (mercaptopropionic acid) and conjugate them to the neurotransmitter dopamine or the protein transferrin. Degree of uptake and labeling patterns of QDs alone, QD-dopamine, and QD-transferrin are compared in different cell lines and toxicity is evaluated using the sulforhodamine B (SRB) assay.



    Ren, Hong-Wen; Sugisaki, Mitsuru; LEE, JEONG-SIK; SUGOU, SHIGEO; Masumoto, Yasuaki


    InP self-assembled quantum dots embedded in Ga0.5In0.5P were fabricated by metal-organic vaporphase epitaxy. Small size and highly uniform InP dots were obtained at lower growth temperatureby using tertiarybutyl-phosphine instead of phosphine. Growth of 4ML InP on a 4ML GaP spacerat 550oC resulted in InP islands of about 30nm in base diameter and 7nm in height within 10%deviation. The formation of the dots was sensitively monitored by a fast-nulling ellipsometer. Byinserting another 2ML GaP s...

  1. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

    Directory of Open Access Journals (Sweden)

    Nikolett Sándor


    Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  2. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn


    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection sp...

  3. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing (United States)

    Deal, William R.; Chattopadhyay, Goutam


    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  4. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel


    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across the ...

  5. Highly doped InP as a low loss plasmonic material for mid-IR region

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.


    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found b...

  6. Surface Plasmons on Highly Doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta


    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function....... The derived dielectric function is used to simulate the excitation of surface plasmons by a diffraction grating made of the grown material. The grating structure is fabricated using standard nanofabrication techniques. Spectral features from the grating agree well with the simulations and show spp coupling...

  7. Magneto-optic effects in doped InP (United States)

    Syed, Maarij; Siahmakoun, Azad


    We report on the investigation of Faraday rotation (FR) of indium phosphide (InP) conducted for several different wavelengths at room temperature. Appreciable FR, yielding Verdet constant values at 980, 1064, 1320, and 1550 nm at room temperature, has been observed. We have also investigated the role for dopants in FR for this class of materials. Specifically we have investigated an n-type dopant (Sulfur) and p-type dopants (Cd and Fe). We also present a simple and consistent model that explains the results for sulfur and points to the need for a more systematic study of these materials.

  8. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M


    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  9. Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen; Junesand, Carl; Kataria, Himanshu; Hu, Chen; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, KTH, Electrum 229, 164 40 Kista (Sweden); Tommila, Juha; Guina, Mircea; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, 33101 Tampere (Finland)


    The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are {proportional_to} 2.5 {mu}m thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Systems and methods for advanced ultra-high-performance InP solar cells (United States)

    Wanlass, Mark


    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  11. Synthesis of InP nanoneedles and their use as Schottky devices


    Strupeit, Tim; Klinke, Christian; Kornowski, Andreas; Weller, Horst


    Indium phosphide (InP) nanostructures have been synthesized by means of colloidal chemistry. Under appropriate conditions needle-shaped nanostructures composed of an In head and an InP tail with lengths up to several micrometers could be generated in a one-pot synthesis. The growth is interpreted in terms of simultaneous decomposition of the In precursor and in situ generation of In and InP nanostructures. Owing to their specific design such In/InP nanoneedles suit the use as ready-made Schot...

  12. [Managment system in safety and health at work organization. An Italian example in public sector: Inps]. (United States)

    Di Loreto, G; Felicioli, G


    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  13. Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform (United States)

    Lv, Qianqian; han, Qin; Pan, Pan; Ye, Han; Yin, Dongdong; Yang, Xiaohong


    We demonstrate a monolithic integration of a photodiode array and a 13 channels arrayed waveguide grating (AWG) grown on InP substrate with a shallow trench structure between the AWG top cladding layer and the photodiode p-doped layer. A smooth epitaxial structure interface is obtained by nonselective regrowth to make the two epitaxial structure compatible and fabrication easy. Three-dimensional finite-difference time-domain(FDTD) solutions are used in the optical simulations. The highest simulation quantum efficiency can achieve 82%. The fabricated PD with a trench structure presents a responsivity of 0.68 A/W. The integrated device can achieve a total capacity of more than 200 Gb/s.

  14. Extended Wavelength InP Based Avalanche Diodes for MWIR Response Project (United States)

    National Aeronautics and Space Administration — For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates...

  15. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel


    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  16. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering


    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  17. Mechanistic Insights into the Formation of InP Quantum Dots


    Allen, Peter M; Walker, Brian J.; Bawendi, Moungi G.


    The molecular mechanism of InP colloidal quantum dot (QD) syntheses was investigated by NMR spectroscopy. Unlike methods for monodisperse PbSe and CdSe, existing InP syntheses result in total depletion of molecular phosphorous species following nucleation, so QD growth is due exclusively to non-molecular ripening. Amines inhibit precursor depletion by solvation (see picture), contrary to previous reports.

  18. Operational training for the mission operations at the Brazilian National Institute for Space Research (INPE) (United States)

    Rozenfeld, Pawel


    This paper describes the selection and training process of satellite controllers and data network operators performed at INPE's Satellite Tracking and Control Center in order to prepare them for the mission operations of the INPE's first (SCD1) satellite. An overview of the ground control system and SCD1 architecture and mission is given. Different training phases are described, taking into account that the applicants had no previous knowledge of space operations requiring, therefore, a training which started from the basics.

  19. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles (United States)

    Oliveira, D. S.; Zavarize, M.; Tizei, L. H. G.; Walls, M.; Ospina, C. A.; Iikawa, F.; Ugarte, D.; Cotta, M. A.


    We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor–liquid–solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

  20. Is TP53INP2 a critical regulator of muscle mass? (United States)

    Sala, David; Zorzano, Antonio


    The main aim of this review is to summarize current knowledge of tumor protein p53-inducible nuclear protein 2 (TP53INP2) function and its role in skeletal muscle proteostasis. Autophagy is directly involved in the regulation of skeletal muscle mass. Thus, excessive autophagy is associated with several diseases that cause muscle wasting, and it promotes the loss of muscle protein. Furthermore, compromised autophagy also leads to muscle atrophy. In this regard, TP53INP2 activates autophagy in skeletal muscle, thus causing a reduction in muscle mass. Moreover, TP53INP2 gain of function enhances muscle wasting in a highly catabolic context such as in streptozotocin-induced diabetes. However, TP53INP2 is naturally repressed in human insulin resistance and in murine models of diabetes. These observations suggest that TP53INP2 repression would reduce muscle atrophy under conditions that favor protein loss in skeletal muscle. To date, there is no effective treatment for muscle wasting. Thus, the identification of new putative pharmacological targets to effectively treat this devastating condition is crucial. Given current knowledge about the role of TP53INP2 in skeletal muscle, this protein may be an optimal candidate to target for the prevention of muscle wasting.

  1. Surface processes during purification of InP quantum dots. (United States)

    Mordvinova, Natalia; Emelin, Pavel; Vinokurov, Alexander; Dorofeev, Sergey; Abakumov, Artem; Kuznetsova, Tatiana


    Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH)3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  2. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova


    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  3. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates (United States)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.


    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  4. The salicylidene acylhydrazide INP0341 attenuates Pseudomonas aeruginosa virulence in vitro and in vivo. (United States)

    Uusitalo, Pia; Hägglund, Ulrik; Rhöös, Elin; Scherman Norberg, Henrik; Elofsson, Mikael; Sundin, Charlotta


    Pseudomonas aeruginosa is an opportunistic pathogen that can be very hard to treat because of high resistance to different antibiotics and alternative treatment regimens are greatly needed. An alternative or a complement to traditional antibiotic is to inhibit virulence of the bacteria. The salicylidene acylhydrazide, INP0341, belongs to a class of compounds that has previously been shown to inhibit virulence in a number of Gram-negative bacteria. In this study, the virulence blocking effect of INP0341 on P. aeruginosa was studied in vitro and in vivo. Two important and closely related virulence system were examined, the type III secretion system (T3SS) that translocates virulence effectors into the cytosol of the host cell to evade immune defense and facilitate colonization and the flagella system, needed for motility and biofilm formation. INP0341 was shown to inhibit expression and secretion of the T3SS toxin exoenzyme S (ExoS) and to prevent bacterial motility on agar plates and biofilm formation. In addition, INP0341 showed an increased survival of P. aeruginosa-infected mice. In conclusion, INP0341 attenuates P. aeruginosa virulence.

  5. Optimized cleaning method for producing device quality InP(100) surfaces (United States)

    Sun, Yun; Liu, Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.


    A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide/sulfuric acid-based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which cannot be removed by thermal annealing. Therefore, a second chemical etching step is needed to remove the oxide. We found that strong acid solutions with HCl or H2SO4 are able to remove the surface oxide and leave the InP surface passivated with elemental P which is, in turn, terminated with H. This yields a hydrophobic surface and allows for lower temperatures to be used during annealing. We also determined that the effectiveness of oxide removal is strongly dependent on the concentration of the acid. Surfaces cleaned by HF solutions were also studied and result in a hydrophilic surface with F-terminated surface In atoms. The chemical reactions leading to the differences in behavior between InP and GaAs are analyzed and the optimum cleaning method for InP is discussed.

  6. 19 CFR 149.4 - Bulk and break bulk cargo. (United States)


    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Bulk and break bulk cargo. 149.4 Section 149.4... TREASURY (CONTINUED) IMPORTER SECURITY FILING § 149.4 Bulk and break bulk cargo. (a) Bulk cargo exempted.... (b) Break bulk cargo exempted from time requirement. For break bulk cargo that is exempt from the...

  7. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang


    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  8. Optical and structural properties of sulfur-doped ELOG InP on Si

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yan-Ting, E-mail:; Junesand, Carl; Metaferia, Wondwosen; Kataria, Himanshu; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Julian, Nick; Bowers, John [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Pozina, Galia; Hultman, Lars [Thin Film Physics Division, Linköping University, 581 83 Linköping (Sweden)


    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO{sub 2} mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  9. Single electron phenomena in InP /InGaAs quantum point contacts (United States)

    Bandaru, Prabhakar; Robinson, Hans; Kosaka, Hideo; Yablonovitch, Eli; Jiang, Hong-Wen


    InP based heterostructures have the advantages over those based on GaAs, in that (a) the bandgap wavelengths are in the range 1.3-1.55 microns, suitable for light transmission through fibers, (b) there is a greater tunability range of the electromagnetic Lande g-factors, important for spintronic applications, and (c) growth on InP substrates is more flexible as InP is lattice matched both to InGaAs and AlInAs. We report here on our results in Quantum Point Contacts (QPCs) fabricated in InP/InGaAs heterostructures, of relevance to single electron phenomena. Several features of the conductance quantization in QPCs such as the Random Telegraph Signal (RTS) noise and resonant tunneling peaks are analyzed with respect to the (a) the length and width of the channel, (b) the nature of the impurities, (d) magnetic field, (e) bias voltage, and (f) temperature.

  10. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures. (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling


    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  11. InP on SOI devices for optical communication and optical network on chip (United States)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.


    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  12. Estimating the background covariance error for the Global Data Assimilation System of CPTEC/INPE (United States)

    Bastarz, C. F.; Goncalves, L.


    The global data assimilation system at CPTEC/INPE, named G3Dvar is based in the Gridoint Statistical Interpolation (GSI/NCEP/GMAO) and in the general circulation model from that same center (GCM/CPTEC/INPE). The G3Dvar is a tri-dimensional variational data assimilation system that uses a Background Error Covariance Matrix (BE) fixed (in its current implementation, it uses the matrix from Global Forecast System - GFS/NCEP). The goal of this work is to present the preliminary results of the calculation of the new BE based on the GCM/CPTEC/INPE using a methodology similar to the one used for the GSI/WRFDA, called gen_be. The calculation is done in 5 distinct steps in the analysis increment space. (a) stream function and potential velocity are determined from the wind fields; (b) the mean of the stream function and potential velocity are calculated in order to obtain the perturbation fields for the remaing variables (streamfunction, potencial velocity, temperature, relative humidity and surface pressure); (c) the covariances of the perturbation fields, regression coeficients and balance between streamfunction, temperature and surface pressure are estimated. For this particular system, i.e. GCM/CPTEC/INPE, the necessity for constrains towards the statistical balance between streamfuncion and potential velocity, temperature and surface pressure will be evaluated as well as the how it affects the BE matrix calculation. Hence, this work will investigate the necessary procedures for calculating BE and show how does that differs from the standard calculation and how it is calibrated/adjusted based on the GCM/CPTEC/INPE. Results from a comparison between the main differences between the GFS BE and the newly calculated GCM/CPTEC/INPE BE are discussed in addition to an impact study using the different background error covariance matrices.

  13. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei


    power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power......In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  14. Modeling on the size dependent properties of InP quantum dots: a hybrid functional study. (United States)

    Cho, Eunseog; Jang, Hyosook; Lee, Junho; Jang, Eunjoo


    Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2-4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values.



    Sugisaki, Mitsuru; Ren, Hong-Wen; Tokunaga, Eiji; Nishi, Kenichi; SUGOU, SHIGEO; Okuno, Tsuyoshi; Masumoto, Yasuaki


    Strong optical anisotropy of the photoluminescence (PL) spectra and time resolvedPL spectra is observed in InP self-assembled quantum dots (SADs) embedded inGaInP matrix. From the TEM study, the origin of the optical anisotropy appearsto be due to the formation of composition modulation planes in GaInP matrix.We also studied the size dependence of the radiative decay time. In the vicinityof the PL peak from InP SADs, slowdown of the PL decay time was observed ondecreasing the detection energy...

  16. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation (United States)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.


    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  17. Investigations on epitaxial and processed InP by optical photoreflectance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, S.; Schreiber, J.; Kuzmenko, R.; Gansha, A. [Martin-Luther-Universitaet, Halle (Germany)] [and others


    Photoreflectance (PR) modulation spectroscopy is a widely used optical technique on GaAs but it has been applied much more rarely on InP being an equally important optoelectronic compound semiconductor. Typical PR spectral lineshapes in the fundamental gap region of various InP materials are investigated. Spectral components such as Franz-Keldysh oscillations, low-field features, and epilayer interference phenomena are analyzed. Current applications concern the determination of the surface electric field, investigations of ion etching and hydrogenation processing, and the characterization of homo- and strained heteroepimial layers.

  18. Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka


    In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

  19. Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates (United States)

    Galiev, G. B.; Klimova, E. A.; Pushkarev, S. S.; Klochkov, A. N.; Trunkin, I. N.; Vasiliev, A. L.; Maltsev, P. P.


    The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411) A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411) A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411) A substrates into polycrystalline ones.

  20. High speed QWIP FPAs on InP substrates (United States)

    Eker, S. U.; Arslan, Y.; Besikci, C.


    Quantum well infrared photodetector (QWIP) technology has allowed the realization of low cost staring focal plane arrays (FPAs). However, AlGaAs/(In)GaAs QWIP FPAs suffer from low quantum and conversion efficiencies under high frame rate and/or low background conditions. We extensively discuss the effect of sensor gain on the FPA performance under various operating conditions, and highlight the superiority of the InP/InGaAs material system with respect to AlGaAs/GaAs for high speed/low background thermal imaging applications. InP/InGaAs QWIPs, providing a bias adjustable gain in a wide range, offer the flexibility of adapting the FPA to strict operating conditions. We also present an experimental comparison of large format AlGaAs/GaAs and (strained) InP/InGaAs QWIP FPAs under different operating conditions. A 640 × 512 QWIP FPA constructed with the 40-well strained InP/In 0.48Ga 0.52As material system displays a cut-off wavelength of 9.7 μm ( λ p = 8.9 μm) with a BLIP temperature higher than 65 K ( f/2), and a peak quantum efficiency as high as 12% with a broad spectral response (Δ λ/ λ p = 17%). The conversion efficiency of the FPA pixels is as high as 20% under large bias (4 V) where the detectivity is reasonably high (˜3 × 10 10 cm Hz 1/2/W, f/2, 65 K). While providing a considerably higher quantum efficiency than the pixels of a similar AlGaAs/GaAs FPA, the InP/InGaAs QWIP provides similar NETD values with much shorter integration times and, being less sensitive to the read noise, successfully operates with sub-millisecond integration times. The results clearly demonstrate that InP based material systems display high potential for single- and dual-band QWIP FPAs by overcoming the limitations of the standard GaAs based QWIPs under high frame rate and/or low background conditions.

  1. Lasing characteristics of InAs quantum dot laers on InP substrate (United States)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.


    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  2. Voc Degradation in TF-VLS Grown InP Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yubo; Sun, Xingshu; Johnston, Steve; Sutter-Fella, Carolin M.; Hettick, Mark; Javey, Ali; Bermel, Peter


    Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the whole sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.

  3. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    Directory of Open Access Journals (Sweden)

    Ma Li


    Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

  4. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials (United States)


    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa PMID:21711809

  5. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications. (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo


    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  6. Mid-IR optical properties of silicon doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion


    of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

  7. Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals. (United States)

    Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E


    This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

  8. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob


    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K...

  9. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel


    The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model co...

  10. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.


    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches...

  11. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel


    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  12. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor


    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  13. Sharing of Data Products From CPTEC/INPE and New Developments for Data Distribution (United States)

    Almeida, W. G.; Lima, A. A.; Pessoa, A. S.; Ferreira, A. T.; Mendes, M. V.; Ferreira, N. J.; Silva Dias, M. F.; Yoksas, T.


    The CPTEC is the Center for Weather Forecast and Climatic Analysis, a division of the INPE, the Brazilian National Institute for Space Research. The CPTEC is an operational and research center, that runs the fastest supercomputer and is a pioneer in global and regional numerical weather forecasting in South America. The INPE is a traditional provider of data, softwares and services for researchers, forecasters and decision makers in Brazil and South America. The institution is a reference for space science, satellite imagery, and environmental studies. Several of the INPE's departments and centers, like the CPTEC, have a variety of valuable datasets, many of them freely available. Currently the politics of "free data and software" is being strengthened, as the INPE's administration has stated it as a priority for the following years. The CPTEC/INPE distributes outputs from several numerical models, like the COLA/CPTEC global model, and regional models for South America, among others. The web and FTP servers also are used to disseminate satellite imagery, satellite derived products, and data from INPE's automated reporting network. Products from the GTS data also are available. To improve these services new servers for FTP and internet are being installed. The data-sharing component of the Unidata Internet Data Distribution (IDD) also is being used to disseminate these data to university participants in both the South American IDD-Brazil and North American IDD. The IDD- Brasil is the expansion of the IDD system in Brazil, and now is delivering data to a rapidly increasing community of university users. Some months ago the CPTEC finished the installation of two new LDM/IDD servers for data relaying and dissemination. With this infrastructure the author believe that the LDM/IDD demand in South America must be attended for the next three years. Some projects and developments are under execution to provide external access to broader set of meteorological and hydro

  14. Bulk Nanostructured Materials (United States)

    Koch, C. C.; Langdon, T. G.; Lavernia, E. J.


    This paper will address three topics of importance to bulk nanostructured materials. Bulk nanostructured materials are defined as bulk solids with nanoscale or partly nanoscale microstructures. This category of nanostructured materials has historical roots going back many decades but has relatively recent focus due to new discoveries of unique properties of some nanoscale materials. Bulk nanostructured materials are prepared by a variety of severe plastic deformation methods, and these will be reviewed. Powder processing to prepare bulk nanostructured materials requires that the powders be consolidated by typical combinations of pressure and temperature, the latter leading to coarsening of the microstructure. The thermal stability of nanostructured materials will also be discussed. An example of bringing nanostructured materials to applications as structural materials will be described in terms of the cryomilling of powders and their consolidation.

  15. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Directory of Open Access Journals (Sweden)

    R.-E. Mamouri


    Full Text Available We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN and ice nucleating particle (INP number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius  > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols, n100, dry (particles with dry radius  >  100 nm, reservoir of desert dust CCN, and of n250, dry (particles with dry radius  >  250 nm, reservoir of favorable INP, as well as profiles of the particle surface area concentration sdry (used in INP parameterizations can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5–2 in the case of n50, dry and n100, dry and of about 25–50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input and available INP

  16. Gallium Arsenide Field Effect Transistors with Semi-Insulated Gates. (United States)


    insulating substrate. Ohmic source and drain contacts of width Z are placed as shown. Between them is a Schottky barrier “gate” of l ength ~,. In norma this manner is given in Figure 22. FETs were fabricated from this material using two different procedures. Both are essential l y the norma l...Forward, and H. L. Hartnagel , App l . Phys. Lett. 26, 569 (1975). 3. a. R. Pr un iaux , J. C. North , and A. V. Payer, IEEE Trans. Electron Devices ED

  17. Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy. (United States)

    Jevasuwan, Wipakorn; Boonpeng, Poonyasiri; Panyakeow, Somsak; Ratanathammaphan, Somchai


    In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.

  18. Unusual nanostructures of “lattice matched” InP on AlInAs

    Energy Technology Data Exchange (ETDEWEB)

    Gocalinska, A., E-mail:; Manganaro, M.; Juska, G.; Dimastrodonato, V.; Thomas, K.; Pelucchi, E. [Tyndall National Institute, University College Cork, “Lee Maltings,” Dyke Parade, Cork (Ireland); Joyce, B. A.; Zhang, J.; Vvedensky, D. D. [The Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom)


    We show that the morphology of the initial monolayers of InP on Al{sub 0.48}In{sub 0.52}As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology.

  19. Electrostatic Stabilized InP Colloidal Quantum Dots with High Photoluminescence Efficiency. (United States)

    Mnoyan, Anush N; Kirakosyan, Artavazd Gh; Kim, Hyunki; Jang, Ho Seong; Jeon, Duk Young


    Electrostatically stabilized InP quantum dots (QDs) showing a high luminescence yield of 16% without any long alkyl chain coordinating ligands on their surface are demonstrated. This is achieved by UV-etching the QDs in the presence of fluoric and sulfuric acids. Fluoric acid plays a critical role in selectively etching nonradiative sites during the ligand-exchange process and in relieving the acidity of the solution to prevent destruction of the QDs. Given that the InP QDs show high luminescence without any electrical barriers, such as long alkyl ligands or inorganic shells, this method can be applied for QD treatment for application to highly efficient QD-based optoelectronic devices.

  20. Effect of dislocations on properties of heteroepitaxial InP solar cells (United States)

    Weinberg, I.; Swartz, C. K.; Curtis, H. B.; Brinker, D. J.; Jenkins, P.; Faur, M.


    The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

  1. XPS study of chemically etched GaAs and InP (United States)

    Bertrand, P. A.


    The surface composition of p-type GaAs etched in HCl or Br2 in methanol, and n-type InP etched in HCl, H2SO4, HNO3 or Br2 in methanol were studied by means of X-ray photoelectron spectroscopy (XPS). The surface compositions of GaAs and the binding energy of the surface As atoms vary with the etching solution and with the extent of oxidation of the surface. The full width at half-maximum of the Ga(3p) photoelectron peak increases upon exposure of etched GaAs to air. The XPS results are compared with Schottky barrier heights previously measured for similarly prepared surfaces with Pb contacts. The amount of oxidized P on InP surfaces is higher after an HNO3 etch than after HCl, H2SO4, of Br2/methanol treatments. An HCl etch leaves an unoxidized slightly In-rich surface.

  2. Superconducting high-field wigglers and wave length shifter in budker INP

    CERN Document Server

    Batrakov, A M; Borovikov, V M


    Several high-field superconducting wigglers (SCW) and wavelength shifters (WLS) are fabricated in the Budker INP for generation of synchrotron radiation.Three-pole WLS with the magnetic field of 7.5 T are installed on LSU-CAMD and BESSY-II storage rings for shifting the radiation spectrum.WLS with the field of 10.3 T will be used for generation of slow positrons on SPring-8.Creation of a 13-pole 7 T wiggler for the BESSY-II and 45-pole 3.5 T wiggler for ELETRA now is finished.The main characteristics,design features and synchrotron radiation properties of SCW and WLS created in the Budker INP are presented in this article.

  3. Electrical and thermal characterization of single and multi-finger InP DHBTs

    DEFF Research Database (Denmark)

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke


    This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal...... characteristics. The results are presented comparing different device dimensions and number of fingers. This work gives directions towards further optimization of geometrical parameters and reduction of thermal effects....

  4. Benefit Evaluation of Human Settlements Development Funded by SPL JBIC INP-23 in Indonesia


    Muhammad Amin Sunarhadi


    The Government of Japan and the Government of Indonesia has signed a loan agreement Sector Program Loan (SPL) INP 23 for Settlement Sector (Human Settlement) through the Japan Bank for International Cooperation (JBIC) which is intended to overcome the economic crisis and its impact in Indonesia since 1997. Research this carry out an evaluation of the benefits of settlement activities that have been implemented in order to know how much contribution the benefits of the settlement Sector progra...

  5. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.


    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... performance evaluation. A single-branch cascode based PA using single-finger InP DHBT devices shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz. The output power at 1dB compression is 9.0dBm. A similar two-way combined cascode based PA using three-finger devices...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  6. Overview of satellite data in CPTEC/INPE G3DVar system (United States)

    Silveira, B. B.; Goncalves, L.


    In the past 2 years, CPTEC/INPE has been implementing and testing its new data assimilation scheme to run with its Atmospheric Global Circulation Model (AGCM) named G3DVar (Global 3DVar). This new tri-dimensional variational scheme is based in the Gridpoint Statistical Interpolation (GSI) system, currently used operationally at NCEP's GFS model. G3DVar is now up and running operationally with assimilation cycle at every 6 hours in the AGCM/CPTEC/INPE, that has 45 Km of horizontal resolution and 64 levels in the vertical, producing forecasts 4 times a day for up to 168 hours. Part of the implementation (and further operational mode) consists in monitoring and evaluating routinely direct radiance data assimilation in the system. This work will present the current status and configuration of the radiative transfer model (CRTM - Community Radiative Transfer Model), quality control and bias correction used in the AGCM/CPTEC/INPE. The current radiances options include sensors like: AMSU-A, MHS, HIRS-4, AIRS, and IASI, interfaced by NCEP BUFR data format. This work will show a review of the configuration options with respect to satellite radiances input and how selected simulated brightness temperature compare against observations. A case study will present preliminary analysis of fields for OMF (observation minus background forecast), OMA (observation minus analysis) and OMR (observation minus a model free run) to assess the current system performance against observations. Variations in skill and number of observations assimilated over different regions are also discussed.

  7. Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate (United States)

    Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.


    Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

  8. Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission (United States)

    Sun, Yun; Liu, Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.


    The chemical cleaning of indium phosphide (InP),(100) surfaces is studied systematically by using photoemission electron spectroscopy. In order to achieve the necessary surface sensitivity and spectral resolution, synchrotron radiation with photon energies ranging from 60 to 600 eV are used to study the indium 4d, phosphorus 2p, carbon 1s, and oxygen 1s core levels, and the valence band. Typical H2SO4:H2O2:H2O solutions used to etch GaAs(100) surfaces are applied to InP(100) surfaces. It is found that the resulting surface species are significantly different from those found on GaAs(100) surfaces and that a second chemical cleaning step using a strong acid is required to remove residual surface oxide. This two-step cleaning process leaves the surface oxide free and with approximately 0.4 ML of elemental phosphorus, which is removed by vacuum annealing. The carbon coverage is also reduced dramatically from approximately 1 to about 0.05 ML. The chemical reactions are investigated, the resulting InP surface species at different cleaning stages are determined, and the optimum cleaning procedure is presented.

  9. Heat transport in bulk/nanoporous/bulk silicon devices

    Energy Technology Data Exchange (ETDEWEB)

    Criado-Sancho, M. [Departamento de Ciencias y Técnicas Físicoquimicas, Facultad de Ciencias, UNED, Senda del Rey 9, 20040 Madrid (Spain); Jou, D., E-mail: [Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Institut d' Estudis Catalans, Carme 47, 08001 Barcelona, Catalonia (Spain)


    We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size.

  10. The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (United States)

    Schuch, Nelson Jorge; Cupertino Durao, Otavio S.

    The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (CBP) and the results of the NANOSATC-BR1, the first Brazilian CubeSat launching, expected for 2014's first semester, are presented. The CBP consists of two CubeSats, NANOSATC-BR 1 (1U) & 2 (2U) and is expected operate in orbit for at least 12 months each, with capacity building in space science, engineering and computer sciences for the development of space technologies using CubeSats satellites. The INPE-UFSM’s CBP Cooperation is basically among: (i) the Southern Regional Space Research Center (CRS), from the Brazilian INPE/MCTI, where acts the Program's General Coordinator and Projects NANOSATC-BR 1 & 2 Manager, having technical collaboration and management of the Mission’s General Coordinator for Engineering and Space Technology at INPE’s Headquarter (HQ), in São José dos Campos, São Paulo; (ii) the Santa Maria Space Science Laboratory (LACESM/CT) from the Federal University of Santa Maria - (UFSM); (iii) the Santa Maria Design House (SMDH); (iv) the Graduate Program in Microelectronics from the Federal University of Rio Grande do Sul (MG/II/UFRGS); and (v) the Aeronautic Institute of Technology (ITA/DCTA/CA-MD). The INPE-UFSM’s CBP has the involvement of UFSM' undergraduate students and graduate students from: INPE/MCTI, MG/II/UFRGS and ITA/DCTA/CA-MD. The NANOSATC-BR 1 & 2 Projects Ground Stations (GS) capacity building operation with VHF/UHF band and S-band antennas, are described in two specific papers at this COSPAR-2014. This paper focuses on the development of NANOSATC-BR 1 & 2 and on the launching of NANOSATC-BR1. The Projects' concepts were developed to: i) monitor, in real time, the Geospace, the Ionosphere, the energetic particle precipitation and the disturbances at the Earth's Magnetosphere over the Brazilian Territory, and ii) the determination of their effects on regions such as the South American Magnetic Anomaly (SAMA) and the Brazilian sector of the

  11. "Understanding" cosmological bulk viscosity


    Zimdahl, Winfried


    A universe consisting of two interacting perfect fluids with the same 4-velocity is considered. A heuristic mean free time argument is used to show that the system as a whole cannot be perfect as well but neccessarily implies a nonvanishing bulk viscosity. A new formula for the latter is derived and compared with corresponding results of radiative hydrodynamics.

  12. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.


    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  13. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander


    symplasmic pathway from mesophyll to sieve elements. Crucial for the driving force is the question where water enters the pre-phloem pathway. Surprisingly, the role of PD in water movement has not been addressed so far appropriately. Modeling of assimilate and water fluxes indicates that in symplasmic...... the concentration gradient or bulk flow along a pressure gradient. The driving force seems to depend on the mode of phloem loading. In a majority of plant species phloem loading is a thermodynamically active process, involving the activity of membrane transporters in the sieve-element companion cell complex. Since...... is currently matter of discussion, called passive symplasmic loading. Based on the limited material available, this review compares the different loading modes and suggests that diffusion is the driving force in apoplasmic loaders, while bulk flow plays an increasing role in plants having a continuous...

  14. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander


    is currently matter of discussion, called passive symplasmic loading. Based on the limited material available, this review compares the different loading modes and suggests that diffusion is the driving force in apoplasmic loaders, while bulk flow plays an increasing role in plants having a continuous...... the concentration gradient or bulk flow along a pressure gradient. The driving force seems to depend on the mode of phloem loading. In a majority of plant species phloem loading is a thermodynamically active process, involving the activity of membrane transporters in the sieve-element companion cell complex. Since...... assimilate movement includes an apoplasmic step, this mode is called apoplasmic loading. Well established is also the polymer-trap loading mode, where the phloem-transport sugars are raffinose-family oligomers in herbaceous plants. Also this mode depends on the investment of energy, here for sugar...

  15. Micromegas in a bulk

    CERN Document Server

    Giomataris, Ioanis; Andriamonje, Samuel A; Aune, S; Charpak, Georges; Colas, P; Giganon, Arnaud; Rebourgeard, P C; Salin, P; Rebourgeard, Ph.


    In this paper we present a novel way to manufacture the bulk Micromegas detector. A simple process based on the PCB (Printed Circuit Board) technology is employed to produce the entire sensitive detector. Such fabrication process could be extended to very large area detectors made by the industry. The low cost fabrication together with the robustness of the electrode materials will make it extremely attractive for several applications ranging from particle physics and astrophysics to medicine

  16. Micromegas in a bulk

    Energy Technology Data Exchange (ETDEWEB)

    Giomataris, I. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France)]. E-mail:; De Oliveira, R. [CERN, Geneva (Switzerland); Andriamonje, S. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Aune, S. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Charpak, G. [CERN, Geneva (Switzerland); Colas, P. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Fanourakis, G. [Institute of Nuclear Physcis, NCSR Demokritos, Aghia Paraskevi 15310 (Greece); Ferrer, E. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Giganon, A. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Rebourgeard, Ph. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France); Salin, P. [DAPNIA, CEA Saclay, F91191 Gif sur Yvette CEDEX (France)


    In this paper, we present a novel way to manufacture the bulk Micromegas detector. A simple process based on the Printed Circuit Board (PCB) technology is employed to produce the entire sensitive detector. Such a fabrication process could be extended to very large area detectors made by the industry. The low cost fabrication together with the robustness of the electrode materials will make it attractive for several applications ranging from particle physics and astrophysics to medicine.

  17. Optical properties of InP from infrared to vacuum ultraviolet studied by spectroscopic ellipsometry (United States)

    Subedi, Indra; Slocum, Michael A.; Forbes, David V.; Hubbard, Seth M.; Podraza, Nikolas J.


    The optical properties of an epitaxial indium phosphide (InP) film deposited on an Fe compensated InP (InP:Fe) wafer have been measured at room temperature by ex-situ spectroscopic ellipsometry over a spectral range of 0.038-8.5 eV. The complex dielectric function spectra, ε (E) = ε1 (E) + iε2 (E), have been determined by fitting a parametric model to the experimental ellipsometric data. Kramers-Kronig consistent parameterizations have been applied to describe interband transitions and defect-based sub-bandgap absorption in the 0.73-8.5 eV spectral range, and both phonon modes and free carrier properties in the 0.038-0.73 eV range. Spectra in ε from 0.73-8.5 eV shows ten higher energy interband critical point transitions at 1.36, 1.42, 3.14, 3.34, 4.71, 4.97, 5.88, 6.45, 7.88, and 8.22 eV. The direct band gap energy of 1.37 eV and Urbach energy 46 meV are also determined from spectra in ε. A strong optical phonon mode is identified near 305 cm-1. Electronic transport properties, carrier concentration (N) and mobility (μ), calculated from Drude model with N = 1.9 × 1018 cm-3 and μ = 1559 cm2/Vs agree well with direct electrical Hall effect measurement values of N = 2.2 × 1018 cm-3 and μ = 1590 cm2/Vs. A parameterization of ε from 0.038 to 8.5 eV for the epitaxial InP film is reported.

  18. Optimized efficiency in InP nanowire solar cells with accurate 1D analysis (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas


    Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p–n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p–n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s‑1, corresponding to a non-radiative lifetime of 1 ns in p–n junction cells. The developed 1D model can be used for general modeling of axial p–n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

  19. Optimized efficiency in InP nanowire solar cells with accurate 1D analysis. (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas


    Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm/s, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method. © 2017 IOP Publishing Ltd.

  20. Sulfur incorporation during epitaxial growth of inp in the IN-HC1-PH3-H2 system (United States)

    Grundmann, D.; Jürgensen, H.; Heyen, M.; Korec, J.; Balk, P.


    The growth and dopant uptake of InP in the In-HCl-PH3-H2 system using H2S as a dopant source has been investigated. As extension of an earlier model for the epitaxial growth of InP the sulfur uptake is described as the formation of InS which yields to the regular solution InP1-xSx. The molar ratio x is determined by the ratio of the incorporation flux of the dopant and the growth rate of the host lattice. Calculations considering the thermodynamics of the system and the kinetic steps of the growth process show that the model satisfactorily accounts for the experimental data.

  1. Enhanced monolayer MoS{sub 2}/InP heterostructure solar cells by graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng [College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Lin, Shisheng, E-mail:; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang [College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Ding, Guqiao [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)


    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS{sub 2}, which results in n-type doping of MoS{sub 2}. The doping effect increases the barrier height at the MoS{sub 2}/InP heterojunction, thus the averaged power conversion efficiency of MoS{sub 2}/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS{sub 2} based heterostructure solar cells.

  2. Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

    CERN Document Server

    Miska, P; Even, J; Bertru, N; Corre, A L; Dehaese, O


    An experimental and theoretical comparative study of InAs quantum dots grown on (001) and (113)B InP substrates is performed. The difference between the optical transitions in the dots on the two substrates is attributed to strain effects. The influence of the first InP capping layer is also studied.

  3. Langmuir-Blodgett monolayers of InP quantum dots with short chain ligands. (United States)

    Lambert, K; Wittebrood, L; Moreels, I; Deresmes, D; Grandidier, B; Hens, Z


    We demonstrate the organization of nearly monodisperse colloidal InP quantum dots at the air/water interface in Langmuir monolayers. The organization of the particles is monitored in situ by surface pressure-surface area measurements and ex situ by AFM measurements on films transferred to mica by Langmuir-Blodgett deposition. The influence of different ligands on the quality of the monolayer formed has been studied. We show that densely packed monolayers with little holes can be formed using short chain ligands like pyridine and pentamethylene sulfide. The advantage of using short chain ligands for electron tunneling to or from the quantum dots is demonstrated using scanning tunneling spectroscopy.

  4. Engineering the morphology of porous InP for waveguide applications

    Energy Technology Data Exchange (ETDEWEB)

    Langa, S. [Faculty of Engineering, Christian-Albrechts University, 24143 Kiel (Germany); LLDSS, Institute of Applied Physics, Technical University of Moldova, 2004 Chisinau (Moldova); Loelkes, S.; Carstensen, J.; Foell, H. [Faculty of Engineering, Christian-Albrechts University, 24143 Kiel (Germany); Hermann, M. [Walter Schottky Institute, Technical University of Munich, Am Coulombwall, 85748 Garching (Germany); Boettger, G. [Technical University Hamburg-Harburg, 21073 Hamburg (Germany); Tiginyanu, I.M. [LLDSS, Institute of Applied Physics, Technical University of Moldova, 2004 Chisinau (Moldova)


    We research the possibilities for engineering the morphology of porous structures in n-InP. Lithographic patterning of the sample surface before anodic etching is shown to modify considerably the electric field distribution which, in turn, defines the direction of pore growth inside the specimen. We show that local formation of the nucleation layer combined with the possibility to introduce current-line oriented pores in a controlled manner represents a promising tool for manufacturing waveguide structures based on porous InP. First results on simulation of the properties of these structures are presented. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.


    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  6. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.


    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  7. Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires (United States)

    Yanase, Shougo; Sasakura, Hirotaka; Hara, Shinjiro; Motohisa, Junichi


    We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. InAsP quantum dots were embedded in these density-controlled InP NW arrays, and clear single-photon emission and exciton-biexciton cascaded emission were confirmed by excitation-dependent photoluminescence and photon correlation measurements.

  8. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke


    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm.......In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver...... stage of the power amplifier. Besides the series voltage addition of the stacked structure, parallel power combining techniques were adopted to increase the output power of the MMIC amplifier, with four-way and eight-way corporate power combiners at the driver and power stages, respectively. At 75 GHz...

  9. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting (United States)

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang


    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm2. At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  10. Phosphine synthetic route features and postsynthetic treatment of InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Mordvinova, Natalia, E-mail:; Vinokurov, Alexander; Dorofeev, Sergey; Kuznetsova, Tatiana; Znamenkov, Konstantin


    Highlights: • Quantum dots with average diameter of 3–5 nm were synthesized. • PH{sub 3} was used as novel phosphorous precursor. • Electrophoresis was demonstrated to be an effective method of purification of QDs. • Photoeching leads to quantum yields about 20%. • The concentration and time dependencies for photoetching of QDs were obtained. -- Abstract: In this paper we report on the development of synthesis of InP quantum dots with a gaseous phosphine PH{sub 3} as a source of phosphorus and myristic acid and TOP/TOPO as stabilizers. Samples synthesized using myristic acid as stabilizer at relatively low temperatures were found to contain admixture of In(OH){sub 3}. We studied the influence of HF concentration and duration of illumination on luminescence properties of InP quantum dots during photoetching process. Quantum yields of photoetched samples reached about 20%. Additionally, electrophoresis as a new technique of purification and size-depended separation of synthesized quantum dots was developed.

  11. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting. (United States)

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang


    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm2. At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  12. Adsorption and thermal stability of 1,4 benzenedimethanethiol on InP(110) (United States)

    Alarcón, Leonardo Salazar; Cristina, Lucila J.; Jia, Juanjuan; Chen, Lin; Giglia, Angelo; Pasquali, Luca; Sánchez, Esteban A.; Esaulov, Vladimir A.; Grizzi, Oscar


    Self-assembly of dithiol molecules is of interest because these can be used as linkers between metallic or semiconductor entities and thus employed in molecular electronics and plasmonic applications, or for building complex heterostructures. Here we focus on dithiol self-assembly by evaporation in vacuum, a method that could circumvent the dithiol oxidation that can occur in solution. We present a high resolution X-ray photoelectron spectroscopy (XPS) and an ion scattering study of adsorption and desorption of 1,4-benzenedimethanethiol on InP(110) as a function of exposure and sample temperature. Results for InP are compared to those on Au(111) and found to differ due to formation of a thick BDMT layer at room temperature, resulting from extra molecules sticking on top of the self-assembled monolayer. This may play an adverse effect in some afore-mentioned applications as in molecular electronics. We furthermore study the evolution of the dithiol film with sample temperature and the elements remaining at the surface after annealing and delineate initial coverage dependent effects.

  13. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel


    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  14. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin


    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  15. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine. (United States)

    Joung, Somyoung; Yoon, Sungwoo; Han, Chang-Soo; Kim, Youngjo; Jeong, Sohee


    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots.

  16. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments. (United States)

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun


    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  17. InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit

    National Research Council Canada - National Science Library

    Wallentin, Jesper; Anttu, Nicklas; Asoli, Damir; Huffman, Maria; Aberg, Ingvar; Magnusson, Martin H; Siefer, Gerald; Fuss-Kailuweit, Peter; Dimroth, Frank; Witzigmann, Bernd; Xu, H Q; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T


    .... We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance...

  18. Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele


    A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based...

  19. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel


    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...

  20. All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel


    Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

  1. Inclusion-like defects in InP substrates and related defects in heteroepitaxial and Zn diffused layers

    Energy Technology Data Exchange (ETDEWEB)

    Franzosi, P.; Salviati, G.; Scaffardi, M.; Audino, R.; Taiariol, F.


    InP substrates grown by the liquid encapsulated Czochralski technique often contain typical inclusion-like defects which consist of a central core from which dislocation loops are punched out. The correlation between these defects present in InP substrates and the crystal quality of InGaAsP and InGaAs epilayers and Zn diffused InP layers has been studied. It has been found that the InGaAsP layers grown by liquid phase epitaxy exhibit roughly circular large hillocks, up to 100 in diameter, related to the inclusion-like defects; moreover, the propagation of dislocation loops from the substrate into the epilayers has been demonstrated. As for InGaAs layers grown by the molecular beam epitaxy, defects elongated in the (110) direction, up to 50 in length and 100 in width, have been observed to be in a one-to-one correspondence with the inclusion-like defects. Finally, misfit dislocations within both InGaAs/InP and InGaAsP/InP heterostructures and cracks within Zn diffused InP layers have been found to originate preferentially at the inclusion-like defects.

  2. On-chip patch antenna on InP substrate for short-range wireless communication at 140 GHz

    DEFF Research Database (Denmark)

    Dong, Yunfeng; Johansen, Tom Keinicke; Zhurbenko, Vitaliy


    This paper presents the design of an on-chip patch antenna on indium phosphide (InP) substrate for short-range wireless communication at 140 GHz. The antenna shows a simulated gain of 5.3 dBi with 23% bandwidth at 140 GHz and it can be used for either direct chip-to-chip communication or chip...

  3. Microfabricated Bulk Piezoelectric Transformers (United States)

    Barham, Oliver M.

    Piezoelectric voltage transformers (PTs) can be used to transform an input voltage into a different, required output voltage needed in electronic and electro- mechanical systems, among other varied uses. On the macro scale, they have been commercialized in electronics powering consumer laptop liquid crystal displays, and compete with an older, more prevalent technology, inductive electromagnetic volt- age transformers (EMTs). The present work investigates PTs on smaller size scales that are currently in the academic research sphere, with an eye towards applications including micro-robotics and other small-scale electronic and electromechanical sys- tems. PTs and EMTs are compared on the basis of power and energy density, with PTs trending towards higher values of power and energy density, comparatively, indicating their suitability for small-scale systems. Among PT topologies, bulk disc-type PTs, operating in their fundamental radial extension mode, and free-free beam PTs, operating in their fundamental length extensional mode, are good can- didates for microfabrication and are considered here. Analytical modeling based on the Extended Hamilton Method is used to predict device performance and integrate mechanical tethering as a boundary condition. This model differs from previous PT models in that the electric enthalpy is used to derive constituent equations of motion with Hamilton's Method, and therefore this approach is also more generally applica- ble to other piezoelectric systems outside of the present work. Prototype devices are microfabricated using a two mask process consisting of traditional photolithography combined with micropowder blasting, and are tested with various output electri- cal loads. 4mm diameter tethered disc PTs on the order of .002cm. 3 , two orders smaller than the bulk PT literature, had the followingperformance: a prototype with electrode area ratio (input area / output area) = 1 had peak gain of 2.3 (+/- 0.1), efficiency of 33 (+/- 0

  4. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.


    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  5. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia, E-mail:; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)


    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots.

  6. Developing bulk exchange spring magnets

    Energy Technology Data Exchange (ETDEWEB)

    Mccall, Scott K.; Kuntz, Joshua D.


    A method of making a bulk exchange spring magnet by providing a magnetically soft material, providing a hard magnetic material, and producing a composite of said magnetically soft material and said hard magnetic material to make the bulk exchange spring magnet. The step of producing a composite of magnetically soft material and hard magnetic material is accomplished by electrophoretic deposition of the magnetically soft material and the hard magnetic material to make the bulk exchange spring magnet.

  7. Formulation of the microbicide INP0341 for in vivo protection against a vaginal challenge by Chlamydia trachomatis.

    Directory of Open Access Journals (Sweden)

    Christian Pedersen

    Full Text Available The salicylidene acylhydrazide (SA compounds have exhibited promising microbicidal properties. Previous reports have shown the SA compounds, using cell cultures, to exhibit activity against Chlamydia trachomatis, herpes simplex virus and HIV-1. In addition, using an animal model of a vaginal infection the SA compound INP0341, when dissolved in a liquid, was able to significantly protect mice from a vaginal infection with C. trachomatis. To expand upon this finding, in this report INP0341 was formulated as a vaginal gel, suitable for use in humans. Gelling agents (polymers with inherent antimicrobial properties were chosen to maximize the total antimicrobial effect of the gel. In vitro formulation work generated a gel with suitable rheology and sustained drug release. A formulation containing 1 mM INP0341, 1.6 wt% Cremophor ELP (solubility enhancer and 1.5 wt% poly(acrylic acid (gelling and antimicrobial agent, was chosen for studies of efficacy and toxicity using a mouse model of a vaginal infection. The gel formulation was able to attenuate a vaginal challenge with C. trachomatis, serovar D. Formulations with and without INP0341 afforded protection, but the inclusion of INP0341 increased the protection. Mouse vaginal tissue treated with the formulation showed no indication of gel toxicity. The lack of toxicity was confirmed by in vitro assays using EpiVaginal tissues, which showed that a 24 h exposure to the gel formulation did not decrease the cell viability or the barrier function of the tissue. Therefore, the gel formulation described here appears to be a promising vaginal microbicide to prevent a C. trachomatis infection with the potential to be expanded to other sexually transmitted diseases.

  8. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

    Energy Technology Data Exchange (ETDEWEB)

    Yerino, Christopher D., E-mail:; Jung, Daehwan; Lee, Minjoo Larry [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Simmonds, Paul J.; Liang, Baolai [California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States); Dorogan, Vitaliy G.; Ware, Morgan E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Huffaker, Diana L. [California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States); Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)


    Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110–240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities for engineering the band alignment, band structure, and optical properties of epitaxial nanostructures.

  9. Self-catalyzed Growth of InAs Nanowires on InP Substrate (United States)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin


    We report on the self-catalyzed growth of InAs nanowires on InP substrate by metal-organic chemical vapor deposition. At a moderate V/III ratio, tapered nanowires are obtained, suggesting a strong surface diffusion effect. Dense twin faults are observed perpendicular to the nanowire growth direction due to the fluctuation of In atoms in the droplet originating from the surface diffusion effect. At a lower V/III ratio, the nanowires exhibit kinking, which is associated with a high adhesion due to a large sticking coefficient of TMIn. The twin faults are dramatically suppressed and even completely eliminated in the NW branch after kinking, which is attributed to a stable In supply with a negligible diffusion effect. This work provides a method for the fabrication of defect-free InAs nanowires.

  10. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves


    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology...... and has a total active emitter area of 68.4 μm2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power‐added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode...

  11. Exciton fine structure splitting in InP quantum dots in GaInP. (United States)

    Ellström, C; Seifert, W; Pryor, C; Samuelson, L; Pistol, M-E


    We have investigated the electronic structure of excitons in InP quantum dots in GaInP. The exciton is theoretically expected to have four states. Two of the states are allowed to optically decay to the ground (vacuum) state in the dipole approximation. We see these two lines in photoluminescence (PL) experiments and find that the splitting between the lines (the fine structure splitting) is 150(± 30) µeV. The lines were perpendicularly polarized. We verified that the lines arise from neutral excitons by using correlation spectroscopy. The theoretical calculations show that the polarization of the emission lines are along and perpendicular to the major axis of elongated dots. The fine structure splitting depends on the degree of elongation of the dots and is close to zero for dots of cylindrical symmetry, despite the influence of the piezoelectric polarization, which is included in the calculation.

  12. Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts. (United States)

    Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M


    We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations.

  13. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti


    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  14. Hole Rashba effect and g-factor in InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X W [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Xia, J B [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)


    The hole Rashba effect and g-factor in InP nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in Bessel functions. It is well known that the electron Rashba coefficient increases nearly linearly with the electric field. As the Rashba spin splitting is zero at zero k{sub z} (the wave vector along the wire direction), the electron g-factor at k{sub z} = 0 changes little with the electric field. While we find that as the electric field increases, the hole Rashba coefficient increases at first, then decreases. It is noticed that the hole Rashba coefficient is zero at a critical electric field. The hole g-factor at k{sub z} = 0 changes obviously with the electric field.

  15. Complex monolithic and InP hybrid integration on high bandwidth electro-optic polymer platform. (United States)

    Groumas, P; Zhang, Z; Katopodis, V; Kouloumentas, Ch; de Felipe, D; Dinu, R; Miller, E; Mallari, J; Cangini, G; Keil, N; Avramopoulos, H; Grote, N


    We report on the monolithic integration of multimode interference couplers, Bragg gratings, and delay-line interferometers on an electro-optic polymer platform capable of modulation directly at 100 Gb/s. We also report on the hybrid integration of InP active components with the polymer structure using the butt-coupling technique. Combining the passive and the active components, we demonstrate a polymer-based, external cavity laser with 17 nm tuning range and the optical assembly of an integrated 100 Gb/s transmitter, and we reveal the potential of the electro-optic polymer technology to provide the next generation integration platform for complex, ultra-high-speed optical transceivers.

  16. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates (United States)

    Lumb, M. P.; Yakes, M. K.; González, M.; Bennett, M. F.; Schmieder, K. J.; Affouda, C. A.; Herrera, M.; Delgado, F. J.; Molina, S. I.; Walters, R. J.


    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.

  17. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.


    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  18. Exciton spin relaxation dynamics in InGaAs /InP quantum wells (United States)

    Akasaka, Shunsuke; Miyata, Shogo; Kuroda, Takamasa; Tackeuchi, Atsushi


    We have investigated the exciton spin relaxation mechanism between 13 and 300K in InGaAs /InP quantum wells using time-resolved spin-dependent pump and probe absorption measurements. The exciton spin relaxation time, τs above 40K was found to depend on temperature, T, according to τs∝T-1.1, although the spin relaxation time is constant below 40K. The clear carrier density dependence of the exciton spin relaxation time was observed below 40K, although the carrier density dependence is weak above 40K. These results imply that the main spin relaxation mechanism above and below 40K are the D'yakonov-Perel' process and the Bir-Aronov-Pikus process, respectively.

  19. Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Johansen, Tom Keinicke; Squartecchia, Michele


    An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while...... the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers...

  20. Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Gnaser, Hubert, E-mail: [Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, D-67663 Kaiserslautern (Germany); Institut für Oberflächen- und Schichtanalytik GmbH (IFOS), Trippstadter Strasse 120, D-67663 Kaiserslautern (Germany); Radny, Tobias [Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, D-67663 Kaiserslautern (Germany)


    Surfaces of InP were bombarded by 1.9 keV Ar{sup +} ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1×10{sup 17} cm{sup −2} to 3×10{sup 18} cm{sup −2} and ion flux densities f of (0.4−2)×10{sup 14} cm{sup −2} s{sup −1} were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3–1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of P{sub n} cluster ions was observed, with n≤11. - Highlights: • Nanodot formation on InP surfaces under Ar{sup +} ion irradiation. • Atom probe tomography of InP: influence of laser pulse energy. • Compositional analysis of individual nanodots with nm spatial resolution. • Abundant emission of P{sub n} cluster ions (n≤11).

  1. Radiation effects in bulk silicon (United States)

    Claeys, Cor; Vanhellemont, Jan


    This paper highlights important aspects related to irradiation effects in bulk silicon. Some basic principles related to the interaction of radiation with material, i.e. ionization and atomic displacement, are briefly reviewed. A physical understanding of radiation effects strongly depends on the availability of appropriate analytical tools. These tools are critically accessed from a silicon bulk viewpoint. More detailed information, related to the properties of the bulk damage and some dedicated application aspects, is given for both electron and proton irradiations. Emphasis is placed on radiation environments encountered during space missions and on their influence on the electrical performance of devices such as memories and image sensors.

  2. Electrical and optical properties of ZnO bulk crystals with and without lithium grown by the hydrothermal technique (United States)

    Wang, Buguo; Claflin, Bruce; Callahan, Michael; Fang, Z.-.; Look, David


    Lithium is usually added into the solution to improve ZnO hydrothermal growth; however, lithium doping affects the properties of the resulting crystals. Optical and electrical properties of hydrothermal ZnO bulk crystals without lithium, have been studied by photoluminescence and Hall-effect measurements. High quality ZnO crystals without lithium were grown in H2O/D2O and in NH3-H2O solutions. The crystals grown from H2O/D2O are conductive with resistivities of 0.6-0.7 Ωcm and mobilities of ~ 100 cm2/Vs, while lithium doped ZnO crystals typically have resistivities of ~ 103Ω-cm and mobilities of ~ 200 cm2/Vs, but can be varied from dozens to 1010 Ω-cm depending on lithium concentration. Lithium-free but nitrogen doped crystals grown in NH3-H2O solution have resistivities of 1×100 Ω-cm and sometimes show p-type conduction; the resistivity increases to ~ 1×108 Ω-cm after annealing at 600° C in air. Lithium and nitrogen co-doped ZnO crystals have resistivities of 108-1012 Ω-cm and are semi-insulating after annealling. Electronic irradiation also increases the ZnO resistivity. For lithium-doped samples, a 3.357 eV peak can be seen in the photoluminescence spectra. This is close to the donor-exciton peaks in indium-doped ZnO where 3.3586 eV and 3.357 eV were found on the C+ and C- faces, respectively. More studies are needed to identify lithium-related complexes (defects).

  3. Metalorganic molecular beam epitaxy of InP on GaAs-substrates for the production of metamorphic high-frequency transistors; Metallorganische Molekularstrahlepitaxie von InP auf GaAS-Substraten fuer die Herstellung metamorpher Hochfrequenztransistoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, R.


    The present contribution is concerned with the highly lattice-mismatched growth of InP on GaAs-substrates by metalorganic molecular beam epitaxy (MOMBE) using TMIn and precracked phosphine as the source materials. Here the objective was to deposit device-suitable InP-layers with low surface roughness, dislocation density and electrical conductivity. Growth-optimization of InP on GaAs was carried out by applying a multitude of characterization methods, amongst others atomic force microscopy, X-ray diffraction, photoluminescence spectroscopy and Hall-effect-measurements. In particular, for the first time the dependence of the surface morphology on the growth parameters was investigated systematically. A growth model was formulated in order to explain the corresponding observations. Furthermore, the influence of both the growth parameters and a post-growth anneal on the optical and structural properties of the deposited InP-layers was investigated. Finally AlInAs/GaInAs-HEMT-structures (High Electron Mobility Transistors) were deposited and processed for the first time on the InP buffer-layers optimized as described above, which demonstrated the device-suitability of the deposited InP/GaAs-heterostructures. All in all a contribution was achieved in solving the main problem for the implementation of InP-based devices on GaAs-substrates. The predestination of the growth-method MOMBE for highly lattice-mismatched systems was also demonstrated. (orig.)

  4. Luminescent InP Quantum Dots with Tunable Emission by Post-Synthetic Modification with Lewis Acids. (United States)

    Stein, Jennifer L; Mader, Elizabeth A; Cossairt, Brandi M


    We demonstrate the ability of M(2+) Lewis acids (M = Cd, Zn) to dramatically enhance the photoluminescence quantum yield (PL QY) of InP quantum dots. The addition of cadmium and zinc is additionally found to red- and blue-shift, respectively, the lowest energy absorption and emission of InP quantum dots while maintaining particle size. This treatment results in a facile strategy to post-synthetically tune the luminescence color in these materials. Optical and structural characterization (XRD, TEM, XAS, ICP) have led us to identify the primary mechanism of PL turn-on as surface passivation of phosphorus dangling bonds, affording PL QYs up to 49% without the growth of a type I shell or the addition of HF. This route to PL enhancement and color tuning may prove useful as a standalone treatment or as a complement to shelling strategies.

  5. Vapour phase growth of InP from the In-PH 3-HCl-H 2 system (United States)

    Jürgensen, H.; Korec, J.; Heyen, M.; Balk, P.


    In this paper the epitaxial deposition of InP in the halide CVD system using an In source and PH 3 is discussed. With HCl as transport agent, the effects of the various growth parameters on the growth rate were determined. A model of growth is discussed, which includes the successive process steps of mass transport in the gas phase, adsorption and chemical reaction at the surface and surface diffusion. Using the values of four adjustable parameters (obtained from fitting to the data on the InCl input pressure dependence of the growth rate), the experimentally found dependence of the rate on the deposition temperature and PH 3 pressure could be reproduced. The study shows the important role of adsorption in the deposition process. On the basis of this study optimum conditions for the reproducible growth of smooth InP films can be derived.

  6. InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit. (United States)

    Wallentin, Jesper; Anttu, Nicklas; Asoli, Damir; Huffman, Maria; Aberg, Ingvar; Magnusson, Martin H; Siefer, Gerald; Fuss-Kailuweit, Peter; Dimroth, Frank; Witzigmann, Bernd; Xu, H Q; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T


    Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.

  7. Dynamics of the cascade capture of electrons by charged donors in GaAs and InP (United States)

    Aleshkin, V. Ya.; Gavrilenko, L. V.


    The times for the cascade capture of an electron by a charged impurity have been calculated for pulsed and stationary excitations of impurity photoconductivity in GaAs and InP. The characteristic capture times under pulsed and continuous excitations are shown to differ noticeably both from each other and from the value given by the Abakumov-Perel-Yassievich formula for a charged impurity concentration greater than 1010 cm-3. The cause of this difference has been established. The Abakumov-Perel-Yassievich formula for the cascade capture cross section in the case of stationary excitation has been generalized. The dependences of the cascade capture rate on the charged impurity concentration in GaAs and InP have been found for three temperatures in the case of pulsed excitation.

  8. Silicon Bulk Micromachined Vibratory Gyroscope (United States)

    Tang, T. K.; Gutierrez, R. C.; Wilcox, J. Z.; Stell, C.; Vorperian, V.; Calvet, R.; Li, W. J.; Charkaborty, I.; Bartman, R.; Kaiser, W. J.


    This paper reports on design, modeling, fabrication, and characterization of a novel silicon bulk micromachined vibratory rate gyroscope designed for microspacecraft applications. The new microgyroscope consists of a silicon four leaf cloverstructure with a post attached to the center.

  9. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate (United States)

    Qiu, Y.; Uhl, D.


    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  10. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate (United States)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya


    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  11. Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Noda, T.; Mano, T.; Jo, M.; Kawazu, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)


    We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs.

  12. Proceedings of BulkTrans '89

    Energy Technology Data Exchange (ETDEWEB)


    Papers were presented on bulk commodity demand; steel industry bulk trades; grains and the world food economy; steam coal and cement demand; shipping profitability; bulk carrier design and economics; bulk ports and terminals; ship unloading; computers in bulk terminals; and conveyors and stockyard equipment.

  13. Combatting bulking sludge with ultrasound

    Energy Technology Data Exchange (ETDEWEB)

    Wuensch, B.; Heine, W.; Neis, U. [Technische Univ. Hamburg-Harburg, Hamburg (Germany). Dept. of Sanitary and Environmental Engineering


    Bulking and floating sludge cause great problems in many waste water treatment plants with biological nutrient removal. The purification as well as the sludge digestion process can be affected. These problems are due to the interlaced structure of filamentous microorganisms, which have an impact on the sludge's settling behaviour. Foam is able to build up a stable layer, which does not settle in the secondary clarifier. Foam in digestion causes a reduction of the degree of stabilisation and of the biogas production. We use low-frequency ultrasound to combat filamentous organisms in bulking sludge. Low-frequency ultrasound is suitable to create high local shear stresses, which are capable of breaking the filamentous structures of the sludge. After preliminary lab-scale tests now a full-scale new ultrasound equipment is operating at Reinfeld sewage treatment plant, Germany. The objective of this study is to explore the best ultrasound configuration to destroy the filamentous structure of bulking and foaming sludge in a substainable way. Later this study will also look into the effects of ultrasound treated bulking sludge on the anaerobic digestion process. Up to now results show that the settling behaviour of bulking sludge is improved. The minimal ultrasound energy input for destruction of bulking structure was determined. (orig.)

  14. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W


    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  15. A 311-GHz Fundamental Oscillator Using InP HBT Technology (United States)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.


    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  16. Modelling of bulk superconductor magnetization (United States)

    Ainslie, M. D.; Fujishiro, H.


    This paper presents a topical review of the current state of the art in modelling the magnetization of bulk superconductors, including both (RE)BCO (where RE = rare earth or Y) and MgB2 materials. Such modelling is a powerful tool to understand the physical mechanisms of their magnetization, to assist in interpretation of experimental results, and to predict the performance of practical bulk superconductor-based devices, which is particularly important as many superconducting applications head towards the commercialization stage of their development in the coming years. In addition to the analytical and numerical techniques currently used by researchers for modelling such materials, the commonly used practical techniques to magnetize bulk superconductors are summarized with a particular focus on pulsed field magnetization (PFM), which is promising as a compact, mobile and relatively inexpensive magnetizing technique. A number of numerical models developed to analyse the issues related to PFM and optimise the technique are described in detail, including understanding the dynamics of the magnetic flux penetration and the influence of material inhomogeneities, thermal properties, pulse duration, magnitude and shape, and the shape of the magnetization coil(s). The effect of externally applied magnetic fields in different configurations on the attenuation of the trapped field is also discussed. A number of novel and hybrid bulk superconductor structures are described, including improved thermal conductivity structures and ferromagnet-superconductor structures, which have been designed to overcome some of the issues related to bulk superconductors and their magnetization and enhance the intrinsic properties of bulk superconductors acting as trapped field magnets. Finally, the use of hollow bulk cylinders/tubes for shielding is analysed.

  17. Doping evaluation of InP nanowires for tandem junction solar cells. (United States)

    Lindelöw, F; Heurlin, M; Otnes, G; Dagytė, V; Lindgren, D; Hultin, O; Storm, K; Samuelson, L; Borgström, M


    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  18. Passive and electro-optic polymer photonics and InP electronics integration (United States)

    Zhang, Z.; Katopodis, V.; Groumas, P.; Konczykowska, A.; Dupuy, J.-.; Beretta, A.; Dede, A.; Miller, E.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Dinu, R.; Cangini, G.; Vannucci, A.; Felipe, D.; Maese-Novo, A.; Keil, N.; Bach, H.-.; Schell, Martin; Avramopoulos, H.; Kouloumentas, Ch.


    Hybrid photonic integration allows individual components to be developed at their best-suited material platforms without sacrificing the overall performance. In the past few years a polymer-enabled hybrid integration platform has been established, comprising 1) EO polymers for constructing low-complexity and low-cost Mach-Zehnder modulators (MZMs) with extremely high modulation bandwidth; 2) InP components for light sources, detectors, and high-speed electronics including MUX drivers and DEMUX circuits; 3) Ceramic (AIN) RF board that links the electronic signals within the package. On this platform, advanced optoelectronic modules have been demonstrated, including serial 100 Gb/s [1] and 2x100 Gb/s [2] optical transmitters, but also 400 Gb/s optoelectronic interfaces for intra-data center networks [3]. To expand the device functionalities to an unprecedented level and at the same time improve the integration compatibility with diversified active / passive photonic components, we have added a passive polymer-based photonic board (polyboard) as the 4th material system. This passive polyboard allows for low-cost fabrication of single-mode waveguide networks, enables fast and convenient integration of various thin-film elements (TFEs) to control the light polarization, and provides efficient thermo-optic elements (TOEs) for wavelength tuning, light amplitude regulation and light-path switching.

  19. Investiagtion of Faraday Rotation (FR) and other optical properties of doped InP (United States)

    Syed, Maarij; Peiris, Frank; Berkeley, Emily


    We report on the investigation of room temperature Faraday rotation (FR) conducted at several different wavelengths and the dielectric constants measured from 190 nm to 1700 nm of several doped-InP samples. Appreciable FR, yielding Verdet constant values at 980, 1064, 1320 and 1550 nm has been observed. We have investigated the role played by dopants in FR for this class of materials. Specifically we have investigated an n-type dopant (Sulfur) and p-type dopants (Cd and Fe). We also present some evidence of band-gap dependence on the type of dopant. A rotating analyzer spectroscopic ellipsometer was employed to measure the complex reflection ratio at room temperature for each of the InP samples. Using a standard inversion technique, the experimental data were modeled to obtain the complex dielectric constant for these specimens. The spectra obtained for the doped samples show suppression in the critical point peaks in comparison to the undoped-InP. Additionally, for the doped-InP, we find absorption below the fundamental energy gap due to free carrier absorption. The spectra also show a shift in the fundamental energy gap in the doped samples with respect to the undoped-InP.

  20. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja


    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise...

  1. Bulk fields with brane terms

    Energy Technology Data Exchange (ETDEWEB)

    Aguila, F. del [Departamento de Fisica Teorica y del Cosmos and Centro Andaluz de Fisica de Particulas Elementales (CAFPE), Universidad de Granada, E-18071 Granada (Spain); Perez-Victoria, M. [Dipartimento di Fisica ' ' G. Galilei' ' , Universita di Padova and INFN, Sezione di Padova, Via Marzolo 8, I-35131 Padua (Italy); Santiago, J. [Institute for Particle Physics Phenomenology, University of Durham, South Road, Durham DH1 3LE (United Kingdom)


    In theories with branes, bulk fields get in general divergent corrections localized on these defects. Hence, the corresponding brane terms are renormalized and should be included in the effective theory from the very beginning. We review the phenomenology associated to brane kinetic terms for different spins and backgrounds, and point out that renormalization is required already at the classical level. (orig.)

  2. Benefit Evaluation of Human Settlements Development Funded by SPL JBIC INP-23 in Indonesia

    Directory of Open Access Journals (Sweden)

    Muhammad Amin Sunarhadi


    Full Text Available The Government of Japan and the Government of Indonesia has signed a loan agreement Sector Program Loan (SPL INP 23 for Settlement Sector (Human Settlement through the Japan Bank for International Cooperation (JBIC which is intended to overcome the economic crisis and its impact in Indonesia since 1997. Research this carry out an evaluation of the benefits of settlement activities that have been implemented in order to know how much contribution the benefits of the settlement Sector program implemented through the SPL IVI-23, both the recipient community, relevant agencies that manage the project, and local governments that implement and oversee the development of the project . The survey was conducted by using a regional approach, ex post facto, and institutional. The selection of cities and counties samples were selected based on three things: the completeness of the program, the amount of funds, and the number of packets. Next, the results of the rank- ings were selected based on 1 the highest ranking, middle, and low; 2 distribution based on the distribution of the three parts of Indonesia, the western, central, and east; and 3 exclude conflict areas. The results showed that in general the development and results of settlement construction is quite beneficial for the government and society. Among other things more organized neighborhoods, neighborhoods healthier, improved infrastructure, and increased mobility of society. Special benefit shows the influence of the change in service, use of services, and its impact. Development of clean water service level (L is satisfactory, the level of use (U range in the level of useful and very useful, and beneficial impact. Drainage construction provide the level of service (L is very satisfactory, the level of use (U ranged between levels is useful and very useful, and beneficial impact. For the construction of basic infrastructure settlement (IS and hi, i provide the level of service (L is very

  3. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.


    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  4. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell


    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  5. Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method (United States)

    Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya


    Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

  6. MOCVD Grown InP and Related Thin Films on Silicon Substrates for Electron and Photonic Devices Applications (United States)

    Zhong, Zhenyu

    Heterogeneous integration of III-V compound semiconductor with silicon is attracting renewed attention in recent years due to its potential in electronic and photonic applications. For electronic applications, a robust integration allows low-voltage and high-speed III-V based transistors to couple with mature silicon-based technologies for functional circuit blocks. Several successful demonstrations have been achieved by molecular beam epitaxy (MBE). In regard to photonic applications, silicon photonics is an important area of research with its possible replacement of copper interconnects. The well-developed III-V photonic devices can be utilized on a silicon platform if a seamless integration can be realized. This concept has been extensively demonstrated by wafer bonding, whereas the manufacturing complexity, reliability and yield are main challenges in this transfer technique. In this thesis, demonstration of heterogeneous integration of III-V based electron and photonic devices on silicon substrates is described, using Metal organic chemical vapor deposition (MOCVD), which is considered more compatible with CMOS processes with good potential for wafer level manufacturing. In this work, InP thin films with smooth surface morphology were firstly achieved by introducing thin GaAs buffer layers. The GaAs buffer was optimized based on the surface morphology, crystalline quality and in situ RAS signal. The total thickness of the buffer layer was finally reduced to 1.2mum by trimming the GaAs buffers as a thin buffer is more desirable for process integration. On top of the thin InP buffer layers, high performance metamorphic high electron mobility transistors (mHEMTs) have been demonstrated for the first time. To implement photonic devices on the buffers, the epitaxial films quality was further improved utilizing novel post-treatment techniques, including thermal process and strained layers for defects reduction. InGaAs p-i-n photodetectors lattice-matched to InP

  7. Adsorption and desorption of P on (001) InP surface in metalorganic chemical vapor deposition by surface photoabsorption

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D


    We studied the surface structure of (001) InP in metalorganic chemical vapor deposition (MOCVD) ambient by surface photoabsorption (SPA). A P-dimer peak at 430 nm and an In-dimer peak at 600 nm were observed from the SPA subtraction spectra. A maximum SPA reflectivity change of 8 % between the P-stabilized and the In-stabilized surfaces was obtained at 470 nm. A first-order desorption kinetics was assumed to curve-fit the SPA signal and an activation energy of 3.36 eV was obtained.

  8. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten


    Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat....... Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits....

  9. Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D


    In situ, real-time monitoring of InP atomic layer epitaxy (ALE) was performed in low-pressure metalorganic chemical vapor deposition (LP-MOCVD) by surface photoabsorption (SPA). A self-limiting adsorption condition was obtained from the trimethylindium (TMIn) decomposition experiment at various conditions. It was found that the growth rate was less than 1 monolayer (ML)/cycle. From the in situ, real-time SPA measurement during InP ALE, the incomplete PH sub 3 decomposition on the methyl-terminated In surface was attributed to the self-limiting submonolayer growth per cycle.

  10. Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µm


    Piron, Rozenn; Dehaese, Olivier; Grillot, Frederic; Homeyer, Estelle; Zhou, Dayong; Dontabactouny, Madhoussoudhana; Elias, Georges; Alghoraibi, Ibrahim; Tavernier, Karine; Chevalier, Nicolas; Batte, Thomas; Even, Jacky; Folliot, Hervé; Paranthoen, Cyril; Bertru, Nicolas


    National audience; Cet article synthétise les études menées à FOTON-INSA pour la réalisation de sources à base de nanostructures semi-conductrices pour les applications télécom à 1,55 µm. Les voies explorées couvrent la réalisation de lasers à fils ou à boites quantiques respectivement sur substrats InP(100) nominale ou désorienté, ou InP(311)B.

  11. The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor


    Rui Wang; Tao Li; Xiumei Shao; Xue Li; Haimei Gong


    We numerically demonstrate the integration of gold wire grid polarizer on InP substrate for InGaAs polarimetric imaging. The effective spectral range of wire grid polarizer has been designed in 0.8-3 μm according to InGaAs response waveband. The dips in TM transmission are observed due to surface plasmon (SPs) significantly damaging polarization performance. To further understand the coupling mechanism between gold wire grid grating and InP, the different contributions of surface plasmon pola...

  12. Bulk density of small meteoroids (United States)

    Kikwaya, J.-B.; Campbell-Brown, M.; Brown, P. G.


    Aims: Here we report on precise metric and photometric observations of 107 optical meteors, which were simultaneously recorded at multiple stations using three different intensified video camera systems. The purpose is to estimate bulk meteoroid density, link small meteoroids to their parent bodies based on dynamical and physical density values expected for different small body populations, to better understand and explain the dynamical evolution of meteoroids after release from their parent bodies. Methods: The video systems used had image sizes ranging from 640 × 480 to 1360 × 1036 pixels, with pixel scales from 0.01° per pixel to 0.05° per pixel, and limiting meteor magnitudes ranging from Mv = +2.5 to +6.0. We find that 78% of our sample show noticeable deceleration, allowing more robust constraints to be placed on density estimates. The density of each meteoroid is estimated by simultaneously fitting the observed deceleration and lightcurve using a model based on thermal fragmentation, conservation of energy and momentum. The entire phase space of the model free parameters is explored for each event to find ranges of parameters which fit the observations within the measurement uncertainty. Results: (a) We have analysed our data by first associating each of our events with one of the five meteoroid classes. The average density of meteoroids whose orbits are asteroidal and chondritic (AC) is 4200 kg m-3 suggesting an asteroidal parentage, possibly related to the high-iron content population. Meteoroids with orbits belonging to Jupiter family comets (JFCs) have an average density of 3100 ± 300 kg m-3. This high density is found for all meteoroids with JFC-like orbits and supports the notion that the refractory material reported from the Stardust measurements of 81P/Wild 2 dust is common among the broader JFC population. This high density is also the average bulk density for the 4 meteoroids with orbits belonging to the Ecliptic shower-type class (ES) also

  13. Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics (United States)

    Ringel, S. A.; Chatterjee, B.


    Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

  14. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment (United States)

    Kim, Hogyoung; Cho, Yunae; Jung, Chan Yeong; Kim, Se Hyun; Kim, Dong-Wook


    Using current-voltage (I-V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100-300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm-2 K-2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole-Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample.

  15. InGaP-based InP quantum dot solar cells with extended optical absorption range (United States)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi


    In the quest for an efficient optical absorption of broad-band solar irradiation, intermediate-band solar cells composed of wide-bandgap semiconductors have attracted attention. In the present study, we developed and investigated the performance of wide-bandgap InGaP-based InP quantum dot (QD) solar cells. The solar cells were fabricated by solid-source molecular beam epitaxy, and their optical absorption range was found to be up to ∼850 nm, which is larger than the ∼680 nm optical absorption range of the host InGaP solar cells. Through the measurements of the voltage-dependent quantum efficiency, the photocarriers generated in the InGaP host were determined to be captured into the InP QDs, rather than expelled from the solar cells. The findings of this study highlight the need for the development of an optimized structure of intermediate-band solar cells to mitigate the capture of the photocarriers.

  16. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S

    Energy Technology Data Exchange (ETDEWEB)

    Wolk, J.A.


    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si[sub Ga] shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  17. Selective formation of porous layer on n-type InP by anodic etching combined with scratching

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail:; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)


    The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

  18. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results. (United States)

    Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro


    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  19. Calculation of bulk etch rate’s semi-empirical equation for polymer track membranes in stationary and dynamic modes

    Directory of Open Access Journals (Sweden)

    A. Mashentseva


    Full Text Available One of the most urgent and extremely social problems in environmental safeties area in Kazakhstan is providing the population of all regions of the country with quality drinking water. Development of filter elements based on nuclear track-etch membranes may be considered as one of best solutions this problem. The values of bulk etch rate and activation energy were calculated in view the effect of temperature, alkaline solution concentration as well as stirring effect. The semi-empirical equation of the bulk etch rate for PET track membranes was calculated. As a result of theoretical and experimental studies a semi-empirical equation of the bulk etch rate VB=3.4∙1012∙C2.07∙exp(-0.825/kT for 12 microns PET film, irradiated by ions 84Kr15+ (energy of 1.75 MeV/nucleon at the heavy ion accelerator DC-60 in Astana branch of the INP NNC RK, was obtained. 

  20. Bulk Moisture and Salinity Sensor (United States)

    Nurge, Mark; Monje, Oscar; Prenger, Jessica; Catechis, John


    Measurement and feedback control of nutrient solutions in plant root zones is critical to the development of healthy plants in both terrestrial and reduced-gravity environments. In addition to the water content, the amount of fertilizer in the nutrient solution is important to plant health. This typically requires a separate set of sensors to accomplish. A combination bulk moisture and salinity sensor has been designed, built, and tested with different nutrient solutions in several substrates. The substrates include glass beads, a clay-like substrate, and a nutrient-enriched substrate with the presence of plant roots. By measuring two key parameters, the sensor is able to monitor both the volumetric water content and salinity of the nutrient solution in bulk media. Many commercially available moisture sensors are point sensors, making localized measurements over a small volume at the point of insertion. Consequently, they are more prone to suffer from interferences with air bubbles, contact area of media, and root growth. This makes it difficult to get an accurate representation of true moisture content and distribution in the bulk media. Additionally, a network of point sensors is required, increasing the cabling, data acquisition, and calibration requirements. measure the dielectric properties of a material in the annular space of the vessel. Because the pore water in the media often has high salinity, a method to measure the media moisture content and salinity simultaneously was devised. Characterization of the frequency response for capacitance and conductance across the electrodes was completed for 2-mm glass bead media, 1- to 2-mm Turface (a clay like media), and 1- to 2-mm fertilized Turface with the presence of root mass. These measurements were then used to find empirical relationships among capacitance (C), the dissipation factor (D), the volumetric water content, and the pore water salinity.

  1. Gold based bulk metallic glass


    Schroers, Jan; Lohwongwatana, Boonrat; Johnson, William L.; Peker, Atakan


    Gold-based bulk metallic glass alloys based on Au-Cu-Si are introduced. The alloys exhibit a gold content comparable to 18-karat gold. They show very low liquidus temperature, large supercooled liquid region, and good processibility. The maximum casting thickness exceeds 5 mm in the best glassformer. Au49Ag5.5Pd2.3Cu26.9Si16.3 has a liquidus temperature of 644 K, a glass transition temperature of 401 K, and a supercooled liquid region of 58 K. The Vickers hardness of the alloys in this system...

  2. Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters. (United States)

    Xie, Renguo; Peng, Xiaogang


    Efficient Cu-doped InP quantum dots (Cu:InP d-dots) emitters were successfully synthesized by epitaxial growth of a ZnSe diffusion barrier for the dopants. The Cu dopant emission of the Cu:InP/ZnSe core/shell d-dots covered the important red and near-infrared (NIR) window for biomedical applicaitons, from 630 to 1100 nm, by varying the size of the InP host nanocrystals. These new d-dots emitters not only compensate for the emission wavelength of the existing noncadmium d-dots emitters, Cu- and Mn-doped ZnSe d-dots (450-610 nm), but also offer a complete series of efficient nanocrystal emitters based on InP nanocrystals. The one-pot synthetic scheme for the formation of Cu:InP/ZnSe core/shell d-dots was successfully established by systematically studying the doping process, the dopant concentration-dependent photophysical properties, and the dopant diffusion during shell epitaxy, etc. Complete elimination of InP bandgap emission and efficient pure dopant emission (with photoluminescence quantum yield as high as between 35-40%) of the core/shell d-dots were achieved by optimizing the final doping level and the diffusion barrier thickness.

  3. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Energy Technology Data Exchange (ETDEWEB)

    Han, Yu; Li, Qiang; Lau, Kei May, E-mail: [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Chang, Shih-Pang; Hsu, Wen-Da [National Nano Device Laboratories, Narlabs, Hsinchu 300, Taiwan (China)


    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  4. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B., E-mail: [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)


    The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

  5. Information technology as a tool for the Italian Institute of Social Security (INPS) in the management of social security and civil disability: Pro and cons. (United States)

    Sammicheli, Michele; Scaglione, Marcella


    We examine, from a medical-legal perspective, the pro and cons of the information technology procedures that the Italian Institute of Social Security (INPS) has implemented to manage the provision of social disability assistance, meaning that separate from the payment of pension contributions, being welfare, anchored to an administrative requirement by way of the compulsory payment of a minimum social security contribution.

  6. A physical based equivalent circuit modeling approach for ballasted InP DHBT multi-finger devices at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Midili, Virginio; Squartecchia, Michele; Johansen, Tom Keinicke


    Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency behavior of the device. This paper presents two distinct modeling approaches: one based on EM simulations and one based on a physical...

  7. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.


    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  8. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin, E-mail: [Nano-optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jietao [School of Physics and Optoelectronic Engineering, Xidian University, Xi' an, Shannxi 710071 (China)


    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.

  9. Handling of bulk solids theory and practice

    CERN Document Server

    Shamlou, P A


    Handling of Bulk Solids provides a comprehensive discussion of the field of solids flow and handling in the process industries. Presentation of the subject follows classical lines of separate discussions for each topic, so each chapter is self-contained and can be read on its own. Topics discussed include bulk solids flow and handling properties; pressure profiles in bulk solids storage vessels; the design of storage silos for reliable discharge of bulk materials; gravity flow of particulate materials from storage vessels; pneumatic transportation of bulk solids; and the hazards of solid-mater

  10. Ultraclean emission from InAsP quantum dots in defect-free wurtzite InP nanowires. (United States)

    Dalacu, Dan; Mnaymneh, Khaled; Lapointe, Jean; Wu, Xiaohua; Poole, Philip J; Bulgarini, Gabriele; Zwiller, Val; Reimer, Michael E


    We report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor-liquid-solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at λ ~ 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 μeV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher.

  11. Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires. (United States)

    Lindgren, David; Kawaguchi, Kenichi; Heurlin, Magnus; Borgström, Magnus T; Pistol, Mats-Erik; Samuelson, Lars; Gustafsson, Anders


    Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging.

  12. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N


    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  13. Integrated remotely tunable optical delay line for millimeter-wave beam steering fabricated in an InP generic foundry. (United States)

    Cao, Z; Tessema, N; Latkowski, S; Zhao, X; Chen, Z; Moskalenko, V; Williams, K A; van der Boom, H P A; Tangdiongga, E; Koonen, A M J


    A compact and fabrication-tolerant integrated remotely tunable optical delay line is proposed for millimeter-wave beam steering and is fabricated in an InP generic foundry. The proposed delay line is based on a spectrally cyclic-arrayed waveguide grating feedback loop. Its major features include the tolerant architecture with reduced chip size, and bi-directional operation with simplified remote tuning. Moreover, its cyclic feature guarantees further cascaded operations either for 2D radio beam steering or for high-resolution delay generation. The experimental results show less than 6.5-dB insertion loss of the integrated delay line. Five different delays from 0 to 71.6 ps are generated with less than 0.67-ps delay errors.

  14. C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate (United States)

    Limeng, Zhang; Dan, Lu; Zhaosong, Li; Biwei, Pan; Lingjuan, Zhao


    The design, fabrication and characterization of a fundamental/first-order mode converter based on multimode interference coupler on InP substrate were reported. Detailed optimization of the device parameters were investigated using 3D beam propagation method. In the experiments, the fabricated mode converter realized mode conversion from the fundamental mode to the first-order mode in the wavelength range of 1530-1565 nm with excess loss less than 3 dB. Moreover, LP01 and LP11 fiber modes were successfully excited from a few-mode fiber by using the device. This InP-based mode converter can be a possible candidate for integrated transceivers for future mode-division multiplexing system. Project supported by the National Basic Research Program of China (No. 2014CB340102) and in part by the National Natural Science Foundation of China (Nos. 61274045, 61335009).

  15. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    Energy Technology Data Exchange (ETDEWEB)

    Barettin, Daniele, E-mail:; Auf der Maur, Matthias [Department of Electronic Engineering, University of Rome “Tor Vergata,” Via del Politecnico 1, 00133, Rome (Italy); De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro [Department of Industrial Engineering, University of Rome Tor Vergata, Via del Politecnico 1 00133 Rome, Italy and INSTM, Unitá di ricerca dell' Universitá di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133, Rome (Italy); Pecchia, Alessandro [CNR-ISMN, via Salaria Km. 29.300, 00017 Monterotondo, Rome (Italy)


    We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

  16. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui


    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  17. First bulk and surface results for the ATLAS ITk stereo annulus sensors

    CERN Document Server

    Abidi, Syed Haider; The ATLAS collaboration; Bohm, Jan; Botte, James Michael; Ciungu, Bianca; Dette, Karola; Dolezal, Zdenek; Escobar, Carlos; Fadeyev, Vitaliy; Fernandez-Tejero, Xavi; Garcia-Argos, Carlos; Gillberg, Dag; Hara, Kazuhiko; Hunter, Robert Francis Holub


    A novel microstrip sensor geometry, the “stereo annulus”, has been developed for use in the end-cap of the ATLAS experiment’s strip tracker upgrade at the High-Luminosity Large Hadron Collider (HL- LHC). The radiation-hard, single-sided, ac-coupled, n + -in-p microstrip sensors are designed by the ITk Strip Sensor Collaboration and produced by Hamamatsu Photonics. The stereo annulus design has the potential to revolutionize the layout of end-cap microstrip trackers promising better tracking performance and more complete coverage than the contemporary configurations. These advantages are achieved by the union of equal length, radially oriented strips with a small stereo angle implemented directly into the sensor surface. The first-ever results for the stereo annulus geometry have been collected across several sites world- wide and are presented here. A number of full-size, unirradiated sensors were evaluated for their mechanical, bulk, and surface properties. The new device, the ATLAS12EC, is compared ag...

  18. Coupling brane fields to bulk supergravity

    Energy Technology Data Exchange (ETDEWEB)

    Parameswaran, Susha L. [Uppsala Univ. (Sweden). Theoretical Physics; Schmidt, Jonas [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)


    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  19. Joint Services Electronics Program. Electronics Research at the University of Texas at Austin. (United States)


    B.G. Streetman, "Simulation of Anomalous Be Diffusion in Semi -Insulating InP," J. Electrochem. Soc. 131, pp. 946-947 (April 1984). S.K. Banerjee, B...34, submitted to LAly,_Pb. C.W. Farley, T.S. Kim, B.G. Streetman, R.T. Laureau and P. Williams, "Encapsulation and Annealing Studies of Semi -Insulating InP...34..~. NES Workshop onureRsac OppoMillite i Wave tRomaetry I Arido , Spa Decemr 1-1, 1985 T. Itoh, "Apicuideond RfEeceivaers Spae ilmtrWveCmoet. 4SF

  20. The coding region of TP53INP2, a gene expressed in the developing nervous system, is not altered in a family with autosomal recessive non-progressive infantile ataxia on chromosome 20q11-q13. (United States)

    Bennetts, Jennifer S; Rendtorff, Nanna D; Simpson, Fiona; Tranebjaerg, Lisbeth; Wicking, Carol


    The locus for autosomal recessive infantile cerebellar ataxia (CLA3 or SCAR6) has been mapped to chromosome 20q11-q13 in a single Norwegian pedigree. We identified a relatively uncharacterised mouse gene Tp53inp2, and showed that its human orthologue mapped within this candidate interval. Tp53inp2 appears to encode a mammalian-specific protein with homology to the two Tp53inp1 isoforms that respond to cellular stress and interact with p53. We show that Tp53inp2 expression is highly restricted during mouse embryogenesis, with strong expression in the developing brain and spinal cord, as well as in the sensory and motor neuron tracts of the peripheral nervous system. Given this expression pattern, the neurological phenotype of CLA3 and the chromosomal localisation of TP53INP2, we searched the coding region for mutations in samples from individuals from the CLA3 pedigree. Our failure to detect causative mutations suggests that alterations in the coding region of TP53INP2 are not responsible for ataxia in this family, although we cannot rule out changes in non-coding elements of this gene.

  1. 27 CFR 20.191 - Bulk articles. (United States)


    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

  2. Wavelength extension beyond 1.5 µm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy (United States)

    Ha, Neul; Mano, Takaaki; Wu, Yu-Nien; Ou, Ya-Wen; Cheng, Shun-Jen; Sakuma, Yoshiki; Sakoda, Kazuaki; Kuroda, Takashi


    By using a C 3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 µm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice.

  3. Stability Test of White LED with Bilayer Structure of Red InP Quantum Dots and Yellow YAG:Ce3+ Phosphor. (United States)

    Park, Kwangwon; Deressa, Gemechu; Kim, Daehan; Kim, Jongsu; Kim, Jihoon; Kim, Taehoon


    The white-light-emitting diode (white LED), based on the bilayer structure of red InP quantum dots (QDs) with 610 nm peak, and yellow YAG:Ce3+ phosphor with 550 nm peak, were fabricated through a conventional 5050 type LED fabrication process. The white LED exhibited high luminous efficiency of >130 Im/W and high color rendering index of >80 under operating current of 60 mA and color temperature of 5800 K. As an increase of QDs concentrations, the white LED showed higher color rendering index along with lower luminous efficiency, and the energy loss in the reabsorption process between yellow YAG:Ce3+ emission and red QD absorption was observed. As the temperature increases, the x-color coordinates were significantly changed, indicating that the InP QDs still have lower thermal stability. Also our white LED showed about 50% lumen maintenance after 45,000 hours of normal operation.

  4. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy (United States)

    Kuyanov, P.; LaPierre, R. R.


    InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron microscopy, allowing the development of a model where QD growth occurs by group V desorption from the surrounding substrate surface. Micro-photoluminescence was performed at 10 K showing emission at 1.47-1.49 eV from the InP wurtzite structure, and various emission peaks between 0.93 and 1.33 eV attributed to the QDs. The emission was tuned by the QD composition. The effectiveness of an AlInP passivation shell was demonstrated via an improvement in the photoluminescence intensity. Spectrally-resolved photocurrent measurements at room temperature demonstrated infrared response due to absorption within the QDs. The absorption red-shifted with increasing As composition of the QD.

  5. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tayagaki, Takeshi, E-mail:; Sugaya, Takeyoshi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)


    We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔE{sub c} ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carrier capture in QDs via Auger relaxation.

  6. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells (United States)

    Tayagaki, Takeshi; Sugaya, Takeyoshi


    We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔEc ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carrier capture in QDs via Auger relaxation.

  7. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D


    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  8. The Horizontal Ice Nucleation Chamber (HINC: INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

    Directory of Open Access Journals (Sweden)

    L. Lacher


    Full Text Available In this work we describe the Horizontal Ice Nucleation Chamber (HINC as a new instrument to measure ambient ice-nucleating particle (INP concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T and relative humidity (RH in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l.  to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %, relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 % to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L−1; normalized to standard T of 273 K and pressure, p, of 1013 hPa and 4.7 std L−1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC of 2.2 std L−1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L−1 was measured during an event influenced by marine air, arriving at the JFJ

  9. The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

    Directory of Open Access Journals (Sweden)

    Rui Wang


    Full Text Available We numerically demonstrate the integration of gold wire grid polarizer on InP substrate for InGaAs polarimetric imaging. The effective spectral range of wire grid polarizer has been designed in 0.8-3 μm according to InGaAs response waveband. The dips in TM transmission are observed due to surface plasmon (SPs significantly damaging polarization performance. To further understand the coupling mechanism between gold wire grid grating and InP, the different contributions of surface plasmon polariton (SPP and localized surface plasmon (LSP to the dips are analyzed. Both transmission and reflectance spectra are simulated at different grating periods and duty cycles by finite-different time-domain (FDTD method. LSP wavelength is located at around 1 μm and sensitive to the specific shape of metal wire. SPP presents higher resonance wavelength closely related to grating period. The simulations of electric field distribution show the same results.

  10. X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy (United States)

    Contour, J. P.; Massies, J.; Saletes, A.


    The effect of chemical etching by H2S04/H202/H20 (5/1/1) mixtures and of mechanopolishing by bromine-methanol diluted solution on GaAs (001) and InP (001) substrates for molecular beam epitaxy (MBE) has been studied using X-ray photoelectron spectroscopy (XPS). The final rinse in running deionized water does not produce any passivating oxide layer on the substrate surface. Oxidation observed on GaAs and InP after these cleaning procedures occurs during substrate handling in air. The H2S04/H202/H20 mixture produces arsenic rich surface layers having an atomic ratio As/Ga of 1.15, whereas the bromine-methanol mechanopolishing leads to an arsenic or phosphorus depleted surface with atomic ratios As/Ga=0.7 and P/In=0.65.

  11. Tapping the potential of trioctylphosphine (TOP) in the realization of highly luminescent blue-emitting colloidal indium phosphide (InP) quantum dots (United States)

    Singh, Akanksha; Chawla, Parul; Jain, Shefali; Sharma, Shailesh Narain


    In this work, extremely small blue emitting colloidal InP-based quantum dots (size 2-5 nm) have been synthesized using trioctylphosphine (TOP) as a source of phosphorus. The method reported here is unconventional, quite rapid ( 90 min), more viable, less expensive and relatively greener as compared to other conventional methods that employ tristrimethylsilyylphosphine(P(SiMe3)3) which is scarce, expensive, flammable, highly toxic and even banned in a few countries. Highly luminescent InP QDs having bluish-green emission (λ 490 nm) can be synthesized using this method without resorting to any post-synthesis etching to tune the emission to the blue region. Besides being the source of phosphorus and the particle size regulating agent, the efficacy of TOP is further realized during synthesis via its reduction of indium salt, which aids in the formation of indium metal and then subsequently in the development of InP QDs. The PL intensity of as-synthesized InP QDs is further enhanced by growing a shell of wide band gap material, i.e. ZnS resulting in a concurrent increment in quantum yield from 25% to 38% respectively.

  12. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length (United States)

    García, S.; Íñiguez-de-la-Torre, I.; Pérez, S.; Mateos, J.; González, T.


    In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of a sinusoidal AC voltage superimposed to the DC bias and by the simulation of the intrinsic device coupled with the consistent solution of a parallel RLC resonant circuit connected in series. InP diodes with active region about 1 μm offer a conversion efficiency up to 5.5% for frequencies around 225 GHz. By virtue of the larger saturation velocity, for a given diode length, oscillation frequencies in GaN diodes are higher than for InP structures. Current oscillations at frequencies as high as 675 GHz, with 0.1% efficiency, are predicted at the sixth generation band in a 0.9 μm-long GaN diode, corroborating the suitability of GaN to operate near the THz band. At the first generation band, structures with notch, in general, provide lower oscillation frequencies and efficiencies in comparison with the same structures without notch. However, a higher number of generation bands are originated in notched diodes, thus, typically reaching larger frequencies. Self-heating effects reduce the performance, but in GaN diodes the efficiency is not significantly degraded.

  13. Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide. (United States)


    valence band. The hole can easily drift away from the magnesium impurity site since neig ’ boring electrons migrate to the site to fill the third...York: John Wiley and Sons , 1974. 10. Casasent, David. Electronic Circuits. New York: Quantum Publishers, Inc., 1973. 11. Kittel, C. Introduction to...Solid State Physics. New York: John Wiley and Sons , Inc., 1976. 12. Pankove, Jacques I. Optical Processes in Semiconductors. Englewood Cliffs NJ

  14. Tidal and subtidal flow patterns o a tropical continental shelf semi-insulated by coral reefs

    NARCIS (Netherlands)

    Tarya, A.; Hoitink, A.J.F.; Vegt, van der M.


    The present study sets out to describe the tidal and subtidal water motion at the Berau coastal shelf, which represents a tropical continental shelf area of variable width hosting a complex of barrier reefs along its oceanic edge. Moored and shipboard measurements on currents and turbulence were

  15. Semi-insulating Sn-Zr-O: Tunable resistance buffer layers (United States)

    Barnes, Teresa M.; Burst, James M.; Reese, Matthew O.; Perkins, Craig L.


    Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO2) into the host oxide to tune the resistivity. We demonstrate SnxZr1-xO2:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.


    Directory of Open Access Journals (Sweden)

    Vasile BOTNARIUC


    Full Text Available Au fost obţinute homojoncţiuni n-pInP cu strat intermediar p-InP crescut repetat prin metoda HVPE cu sau fără strat frontal nCdS şi au fost cercetate proprietăţile electrice şi fotoelectrice ale acestora. S-a constatat că depunerea stratului intermediar măreşte fotosensibilitatea homostructurilor cu 15…20%. Eficienţa energetică a CF cu structura n+CdS-n+InP-p-InP-p+InP constituie 13,5% pentru fluxul luminos incident de 100 mW×cm-2. Eficienţa CF cu heterostructura nCdS-pInP şi cu strat intermediar similar creşte cu 27%, în comparaţie cu CF cu homostructura n-p--pInP şi cu strat frontal nCdS, având valoarea de 17,3%. Se conturează posibilitatea reală de mărire a eficienţei CF de acest tip.FOTOVOLTAIC CELLS WITH HOMOJUNCTIONS IN InP: REZULTS AND COMPARISONSElectrical and photoelectrical properties of InP p-n homojunctions with an intermediate p-InP layer repeatedly grown by HVPE method, with and without frontal nCdS layer were produced and studied. It was found that the deposition of this intermediate p-InP layer increases the cells photosensitivity by 15 ... 20%. The solar energy conversion efficiency of photovoltaic cell (PC with n+CdS-n+InP-p-InP-p+InP structure is 13.5% at the illumination of 100 The efficiency of the PC based on nCdS-pInP heterostructure and an analogic intermediate layer increases to 27% compared with the PC based on n-p--pInP homostructure having a frontal nCdS layer has an efficiency of 17.3%. The possibility of increasing of the efficiency of this PC type is formulated.

  17. Contribuição de diversos sistemas de observação na previsão de tempo no CPTEC/INPE Contribution of the several observation systems in the forecast skill at CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Rita V. Andreoli


    Full Text Available Experimentos utilizando sistemas de observação global, foram realizados excluindo um ou mais tipos de observação do esquema global de assimilação de dados/previsão de tempo do Centro de Previsão de Tempo e Estudos Climáticos do Instituto Nacional de Pesquisas Espaciais - CPTEC/INPE (Global Physical-space Statistical Analysis System - GPSAS. Estes experimentos indicam como efetivamente as observações são usadas no GPSAS. Os sistemas de observação testados foram o conjunto de dados convencionais, que incluem informações de superfície (estações em superfície, bóias, navios e plataformas oceânicas e de ar superior (radiossondagem, aeronaves e balões piloto, os sistemas de sondagem Advanced TIROS-N/NOAA Operational Vertical Sounder (ATOVS e AQUA, composto pelos sensores Atmospheric Infrared Sounder e Advanced Microwave Sounding Unit (AIRS/AMSU, dados de vento de satélite, estimados a partir do deslocamento de nuvens (Cloud Track Wind, dados de vento em superfície sobre o oceano (QuikScat e água precipitável (Total Precipitation water - TPW. Todos os sistemas testados mostram um impacto positivo na qualidade da previsão. Os dados convencionais têm um maior impacto na região do Hemisfério Norte devido à maior disponibilidade dessas informações sobre esta região. Por outro lado, as sondagens AIRS/AMSU são fundamentais para uma boa previsão sobre o Hemisfério Sul. Sobre a América do Sul, os perfis inferidos pelo sistema de sondagem AQUA contribuem com a mesma ordem de grandeza dos dados convencionais e apresentam um impacto positivo para todos os períodos de previsões analisados. Dados de vento e água precipitável estimados por satélites têm maior impacto nas regiões tropical e da América do Sul, nas primeiras horas de previsão (1-3 dias. Todavia, a utilização de um conjunto completo de observações é crucial para se obter, operacionalmente, uma boa condição inicial do estado atmosférico para ser


    Kelić, Katarina; Matić, Sanja; Marović, Danijela; Klarić, Eva; Tarle, Zrinka


    The aim of the study was to determine microhardness of high- and low-viscosity bulk-fill composite resins and compare it with conventional composite materials. Four materials of high-viscosity were tested, including three bulk-fills: QuiXfi l (QF), x-tra fi l (XTF) and Tetric EvoCeram Bulk Fill (TEBCF), while nanohybrid composite GrandioSO (GSO) served as control. The other four were low-viscosity composites, three bulk-fill materials: Smart Dentin Replacement (SDR), Venus Bulk Fill (VBF) and x-tra base (XB), and conventional control material X-Flow (XF). Composite samples (n=5) were polymerized for 20 s with Bluephase G2 curing unit. Vickers hardness was used to determine microhardness of each material at the surface, and at 2-mm and 4-mm depth. GSO on average recorded significantly higher microhardness values than bulk-fill materials (pcomposite XF revealed similar microhardness values as SDR, but significantly lower than XB (pmaterials was lower than microhardness of the conventional composite material (GSO). Surface microhardness of low-viscosity materials was generally even lower. The microhardness of all tested materials at 4 mm was not different from their surface values. However, additional capping layer was a necessity for low-viscosity bulk-fill materials due to their low microhardness.

  19. Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke


    In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can...... be employed to improve the power handling ability through optimizing the input impedance of the CB device. The minimized power mismatch between the CB and the common-emitter(CE) devices results in an improved saturated output power. To demonstrate the technique for power amplifier designs at mm......-wave frequencies, a single-branch cascode based PA using single-finger devices and a two-way combined based PA using three-finger devices are fabricated. The single-branch design shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz and the two-way combined design shows a power...

  20. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail:; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)


    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  1. Effective surface passivation of multi-shelled InP quantum dots through a simple complexing with titanium species (United States)

    Jo, Jung-Ho; Kim, Min-Seok; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun


    Fluorescent efficiency of various visible quantum dots (QDs) has been incessantly improved to meet industrially high standard mainly through the advance in core/shell heterostructural design, however, their stability against degradable environments appears still lacking. The most viable strategy to cope with this issue was to exploit chemically inert oxide phases to passivate QD surface in the form of either individual overcoating or matrix embedding. Herein, we report a simple but effective means to passivate QD surface by complexing its organic ligands with a metal alkoxide of titanium isopropoxide (Ti(i-PrO)4). For this, highly efficient red-emitting InP QDs with a multi-shell structure of ZnSeS intermediate plus ZnS outer shell are first synthesized and then the surface of resulting InP/ZnSeS/ZnS QDs is in-situ decorated with Ti(i-PrO)4. The presence of Tisbnd O species from Ti(i-PrO)4 on QD surface is verified by x-ray photoelectron and Fourier transform infrared spectroscopic analyses. Two comparative dispersions of pristine versus Ti(i-PrO)4-complexed QDs are exposed for certain periods of time to UV photon and heat and their temporal changes in photoluminescence are monitored, resulting in a huge improvement in QD stability from the latter ones through Ti(i-PrO)4-mediated better surface passivation.

  2. Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

    Directory of Open Access Journals (Sweden)

    Lúcia Helena Ribas Machado


    Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

  3. A brief overview of bulk metallic glasses

    National Research Council Canada - National Science Library

    Mingwei Chen


      The discovery of bulk metallic glasses (BMGs) has stimulated widespread research enthusiasm because of their technological promise for practical applications and scientific importance in understanding glass formation and glass phenomena...

  4. Boundary-bulk relation in topological orders (United States)

    Kong, Liang; Wen, Xiao-Gang; Zheng, Hao


    In this paper, we study the relation between an anomaly-free n + 1D topological order, which are often called n + 1D topological order in physics literature, and its nD gapped boundary phases. We argue that the n + 1D bulk anomaly-free topological order for a given nD gapped boundary phase is unique. This uniqueness defines the notion of the "bulk" for a given gapped boundary phase. In this paper, we show that the n + 1D "bulk" phase is given by the "center" of the nD boundary phase. In other words, the geometric notion of the "bulk" corresponds precisely to the algebraic notion of the "center". We achieve this by first introducing the notion of a morphism between two (potentially anomalous) topological orders of the same dimension, then proving that the notion of the "bulk" satisfies the same universal property as that of the "center" of an algebra in mathematics, i.e. "bulk" = center". The entire argument does not require us to know the precise mathematical description of a (potentially anomalous) topological order. This result leads to concrete physical predictions.

  5. Construção, usos sociais e busca de legitimidade das tecnologias da geoinformação do INPE | Construction, social uses and legitimation of geioinformational technologies at INPE

    Directory of Open Access Journals (Sweden)

    Paulo Augusto Sobral Escada


    Full Text Available Resumo Este artigo analisa a experiência de um grupo de cientistas e especialistas do Instituto Nacional de Pesquisas Espaciais (INPE que buscou consolidar e legitimar, ao longo de duas décadas, um modo próprio de produção de conhecimento científico e tecnológico. Mudanças de paradigma da Política de C&T, nos anos 1990, retiraram o apoio governamental de seus desenvolvimentos, obrigando-os a mudar suas ações estratégicas para que permitisse manter e preservar o modelo endógeno e autônomo de produção do conhecimento. O artigo trabalha com a perspectiva de Pierre Bourdieu (2001, aplicada ao campo científico, e a noção de “translação” de Bruno Latour (2000. A abordagem sociológica contempla e naturaliza os jogos de interesses e disputas no interior do campo científico, bem como destaca o processo de legitimação científica e social do conhecimento. O artigo tem como objetivo principal oferecer uma contribuição aos processos de discussão do modelo das políticas de CTI, principalmente na definição dos conhecimentos a serem produzidos e absorvidos pelo processo de desenvolvimento econômico e social do país. O artigo destaca a necessidade de se ampliar e aprofundar mecanismos democráticos, adotando maior inclusão e transparência nas disputas do campo científico e das políticas de C&T, condições básicas para alcançar um consenso geral que permita emergir um desenvolvimento desejado e planejado por boa parte da sociedade. Palavras-chave Sociologia do Conhecimento, produção de conhecimento, legitimação, democracia e desenvolvimento Abstract This article analyzes the experience of a group of scientists and specialists from the National Institute of Space Research (INPE who aimed to consolidate and legitimize, throughout two decades, its own way of producing scientific and technological knowledge. Changes of paradigm in Science, Technology and Innovation (STI Politics, during the 90s, removed governmental

  6. Integration of bulk piezoelectric materials into microsystems (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.

  7. Development of superconductor bulk for superconductor bearing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong (and others)


    Current carrying capacity is one of the most important issues in the consideration of superconductor bulk materials for engineering applications. There are numerous applications of Y-Ba-Cu-O (YBCO) bulk superconductors e.g. magnetic levitation train, flywheel energy storage system, levitation transportation, lunar telescope, centrifugal device, magnetic shielding materials, bulk magnets etc. Accordingly, to obtain YBCO materials in the form of large, single crystals without weak-link problem is necessary. A top seeded melt growth (TSMG) process was used to fabricate single crystal YBCO bulk superconductors. The seeded and infiltration growth (IG) technique was also very promising method for the synthesis of large, single-grain YBCO bulk superconductors with good superconducting properties. 5 wt.% Ag doped Y211 green compacts were sintered at 900 .deg. C {approx} 1200 .deg.C and then a single crystal YBCO was fabricated by an infiltration method. A refinement and uniform distribution of the Y211 particles in the Y123 matrix were achieved by sintering the Ag-doped samples. This enhancement of the critical current density was ascribable to a fine dispersion of the Y211 particles, a low porosity and the presence of Ag particles. In addition, we have designed and manufactured large YBCO single domain with levitation force of 10-13 kg/cm{sup 2} using TSMG processing technique.

  8. Holographic bulk reconstruction with α' corrections (United States)

    Roy, Shubho R.; Sarkar, Debajyoti


    We outline a holographic recipe to reconstruct α' corrections to anti-de Sitter (AdS) (quantum) gravity from an underlying CFT in the strictly planar limit (N →∞ ). Assuming that the boundary CFT can be solved in principle to all orders of the 't Hooft coupling λ , for scalar primary operators, the λ-1 expansion of the conformal dimensions can be mapped to higher curvature corrections of the dual bulk scalar field action. Furthermore, for the metric perturbations in the bulk, the AdS /CFT operator-field isomorphism forces these corrections to be of the Lovelock type. We demonstrate this by reconstructing the coefficient of the leading Lovelock correction, also known as the Gauss-Bonnet term in a bulk AdS gravity action using the expression of stress-tensor two-point function up to subleading order in λ-1.

  9. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini


    and a low glass transition temperature. The alloys were prepared by using a relatively simple technique, i.e. rapid cooling of the melt in a copper wedge mould. The essential structural changes that are achieved by going from the amorphous to the crystalline state through the supercooled liquid state...... are discussed in this paper. On the basis of these measurements phase diagrams of the different systems were constructed. Finally, it is demonstrated that when pressing the bulk amorphous alloy onto a metallic dies at temperatures within the supercooled liquid region, the alloy faithfully replicates the surface......The present paper describes the preparation and properties of bulk amorphous quarternary Mg-based alloys and the influence of additional elements on the ability of the alloy to form bulk amorphous. The main goal is to find a Mg-based alloy system which shows both high strength to weight ratio...

  10. Orchestrating Bulk Data Movement in Grid Environments

    Energy Technology Data Exchange (ETDEWEB)

    Vazhkudai, SS


    Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralized data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.

  11. Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (13th) Held in Cabourg, France on 10-12 May 1989 (United States)


    advantages can be quoted: - In-situ cleaning by H2 plasma removes the native oxides at low temperatures - Using solid sources no toxic gases or organic... ferrocene as metalorganic source material we have grown semi-insulating InP layers with resistivities up to g= 2;10 9..ncm. The resistivity of the

  12. Thermal relics in cosmology with bulk viscosity

    Energy Technology Data Exchange (ETDEWEB)

    Iorio, A. [Charles University in Prague, Faculty of Mathematics and Physics, Prague (Czech Republic); Lambiase, G. [Universita di Salerno, Dipartimento di Fisica E.R. Caianiello, Fisciano (Italy); INFN, Gruppo Collegato di Salerno, Fisciano (Italy)


    In this paper we discuss some consequences of cosmological models in which the primordial cosmic matter is described by a relativistic imperfect fluid. The latter takes into account the dissipative effects (bulk viscosity) arising from different cooling rates of the fluid components in the expanding Universe. We discuss, in particular, the effects of the bulk viscosity on Big Bang Nucleosynthesis and on the thermal relic abundance of particles, looking at recent results of PAMELA experiment. The latter has determined an anomalous excess of positron events, which cannot be explained by conventional cosmology and particle physics. (orig.)

  13. A mechanistic analysis of bulk powder caking (United States)

    Calvert, G.; Curcic, N.; Ghadiri, M.


    Bulk powder transformations, such as caking, can lead to numerous problems within industry when storing or processing materials. In this paper a new Environmental Caking Rig (ECR) is introduced and has been used to evaluate the caking propensity of a hygroscopic powder as a function of temperature, Relative Humidity (RH), mechanical stress and also when RH is cycled. A linear relationship exists between cake strength and the extent of bulk deformation, here defined by the engineering strain. An empirical model has been used to predict the caking behaviour based on consolidation stress and environmental conditions.

  14. Synthesis of Bulk Superconducting Magnesium Diboride

    Directory of Open Access Journals (Sweden)

    Margie Olbinado


    Full Text Available Bulk polycrystalline superconducting magnesium diboride, MgB2, samples were successfully prepared via a one-step sintering program at 750°C, in pre Argon with a pressure of 1atm. Both electrical resistivity and magnetic susceptibility measurements confirmed the superconductivity of the material at 39K, with a transition width of 5K. The polycrystalline nature, granular morphology, and composition of the sintered bulk material were confirmed using X-ray diffractometry (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX.

  15. propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InP


    Cornet, Charles


    This thesis deals with the understanding of InAs quantum dots on InP substrate. Chapter 0 is a detailed introduction to quantum dots. This part presents the motivations for studying quantum dots, and especially in the InAs/InP system. Epitaxial growth principles are thus explained.Chapter 1 presents a theoretical study of quantum dots on InP substrate. These dots are studied from a theoretical point of view, by a eight-band k•p calculation. The impact of the dot composition (InAs or InAsSb) a...

  16. Cellulosic ethanol byproducts as a bulking agent (United States)

    J.M. Considine; D. Coffin; J.Y. Zhu; D.H. Mann; X. Tang


    Financial enhancement of biomass value prior to pulping requires subsequent use of remaining materials; e.g., high value use of remaining stock material after cellulosic ethanol production would improve the economics for cellulosic ethanol. In this work, use of enzymatic hydrolysis residual solids (EHRS), a cellulosic ethanol byproduct, were investigated as a bulking...


    Directory of Open Access Journals (Sweden)



    Full Text Available This paper presents the experiments that were conducted on the installation of continuous bulking and thermofixing “SUPERBA” type TVP-2S for optimization of the plush yarns bulking process. There were considered plush yarns Nm 6.5/2, made of the fibrous blend of 50% indigenous wool sort 41 and 50% PES. In the first stage, it performs a thermal treatment with a turboprevaporizer at a temperature lower than thermofixing temperature, at atmospheric pressure, such that the plush yarns - deposed in a freely state on a belt conveyor - are uniformly bulking and contracting. It was followed the mathematical modeling procedure, working with a factorial program, rotatable central composite type, and two independent variables. After analyzing the parameters that have a direct influence on the bulking degree, there were selected the pre-vaporization temperature (coded x1,oC and the velocity of belt inside pre-vaporizer (coded x 2, m/min. As for the dependent variable, it was chosen the plush yarn diameter (coded y, mm. There were found the coordinates of the optimal point, and then this pair of values was verified in practice. These coordinates are: x1optim= 90oC and x 2optim= 6.5 m/min. The conclusion is that the goal was accomplished: it was obtained a good cover degree f or double-plush carpets by reducing the number of tufts per unit surface.

  18. Characteristics of bulk liquid undercooling and crystallization ...

    Indian Academy of Sciences (India)

    157–161. c Indian Academy of Sciences. Characteristics of bulk liquid undercooling and crystallization behaviors of jet electrodeposition Ni–W–P alloy. J K YU. ∗. , Y H WANG, G Z XING, Q QIAO, B LIU, Z J CHU, C L LI and F YOU. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University,.

  19. Characteristics of bulk liquid undercooling and crystallization ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 38; Issue 1. Characteristics of bulk liquid undercooling and crystallization behaviors of jet electrodeposition Ni–W–P alloy. J K Yu Y H Wang G Z Xing Q Qiao B Liu Z J Chu C L Li F You. Volume 38 Issue 1 February 2015 pp 157-161 ...

  20. Failure by fracture in bulk metal forming

    DEFF Research Database (Denmark)

    Silva, C.M.A.; Alves, Luis M.; Nielsen, Chris Valentin


    This paper revisits formability in bulk metal forming in the light of fundamental concepts of plasticity,ductile damage and crack opening modes. It proposes a new test to appraise the accuracy, reliability and validity of fracture loci associated with crack opening by tension and out-of-plane shear...

  1. Thermal bulk polymerization of cholesteryl acrylate

    NARCIS (Netherlands)

    de Visser, A.C.; de Groot, K.; Feijen, Jan; Bantjes, A.


    The thermal bulk polymerization of cholesteryl acrylate was carried out in the solid phase, the mesomorphic phase, and the liquid phase to study the effect of monomer ordering on polymerization rate and polymer properties. The rate increased with decreasing ordering (or enhanced mobility) of the

  2. A large-scale biomass bulk terminal

    NARCIS (Netherlands)

    Wu, M.R.


    This research explores the possibility of a large-scale bulk terminal in West Europe dedicated to handle solid and liquid biomass materials. Various issues regarding the conceptual design of such a terminal have been investigated and demonstrated in this research: the potential biomass materials

  3. Bulk metamaterials: Design, fabrication and characterization

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Malureanu, Radu; Alabastri, Alessandro


    Bulk metamaterials claim a lot of attention worldwide. We report about our activity and advances in design, fabrication and characterization of metal-dielectric composites with three-dimensional lattices. The nomenclature of designs exhibiting negative index behaviour in the near infrared includes...

  4. Polonium bulk and surface vibrational dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Tigrine, Rachid; Bourahla, Boualem [Laboratoire de Physique PEC UMR 6087, Universite du Maine, Le Mans (France); Laboratoire de Physique et Chimie Quantique, Universite de Tizi Ouzou (Algeria); Khater, Antoine


    Calculations are presented for the bulk phonons and for surface Rayleigh phonons and resonances for Polonium, the only element known to form in the simple cubic lattice. The static stability of this lattice has been confirmed recently by ab initio simulations which yield two bulk elastic constants, c{sub 11} and c{sub 12}. Constitutive equations are derived for the isotropic cubic lattice based upon the Fuchs's method. This permits effectively a numerical evaluation of central potential force constants for Polonium from the ab initio results. Numerical calculations are then made for the material vibration dynamics in the force constant model with the use of the matching method. The numerical applications yield for Polonium the bulk phonon branches along[100],[110], and [111], and the Rayleigh phonons and surface resonances along the[010] direction in an unreconstructed (001) surface. The local vibration densities of states are calculated for bulk and surface sites for this element. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Modelling ventilated bulk storage of agromaterials

    NARCIS (Netherlands)

    Grubben, N.L.M.; Keesman, K.J.


    Storage of season-dependent agro-materials is a key process in providing food, feed and biomass throughout the whole year. We review the state of the art in physical modelling, simulation and control of ventilated bulk storage facilities, and in particular the storage of potatoes, from a

  6. Teaching Advanced SQL Skills: Text Bulk Loading (United States)

    Olsen, David; Hauser, Karina


    Studies show that advanced database skills are important for students to be prepared for today's highly competitive job market. A common task for database administrators is to insert a large amount of data into a database. This paper illustrates how an up-to-date, advanced database topic, namely bulk insert, can be incorporated into a database…

  7. Transformation kinetics for surface and bulk nucleation

    Energy Technology Data Exchange (ETDEWEB)

    Villa, Elena, E-mail: [University of Milan, Department of Mathematics, via Saldini 50, 20133 Milano (Italy); Rios, Paulo R., E-mail: [Universidade Federal Fluminense, Escola de Engenharia Industrial Metalurgica de Volta Redonda, Av. dos Trabalhadores 420, 27255-125 Volta Redonda, RJ (Brazil)] [RWTH Aachen University, Institut fuer Metallkunde und Metallphysik, D-52056 Aachen (Germany)


    A rigorous mathematical approach based on the causal cone and stochastic geometry concepts is used to derive new exact expressions for transformation kinetics theory. General expressions for the mean volume density and the volume fraction are derived for both surface and bulk nucleation in a general Borel subset of R{sup 3}. In practice, probably any specimen shape of engineering interest is going to be a Borel set. An expression is also derived for the important case of polyhedral shape, in which surface nucleation may take place on the faces, edges and vertices of the polyhedron as well as within the bulk. Moreover, explicit expressions are given for surface and bulk nucleation for three specific shapes of engineering relevance: two parallel planes, an infinitely long cylinder and a sphere. Superposition is explained in detail and it permits the treatment of situations in which surface and bulk nucleation take place simultaneously. The new exact expressions presented here result in a significant increase in the number of exactly solvable cases available to formal kinetics.

  8. Scientific computing on bulk synchronous parallel architectures

    NARCIS (Netherlands)

    Bisseling, R.H.; McColl, W.F.


    Bulk synchronous parallel architectures oer the prospect of achieving both scalable parallel performance and architecture independent parallel software. They provide a robust model on which to base the future development of general purpose parallel computing systems. In this paper, we theoretically

  9. Radiopacity of bulk fill flowable resin composite materials | Yildirim ...

    African Journals Online (AJOL)

    Objectives: The purpose of this study was to evaluate the radiopacity of currently marketed bulk fill flowable dental composite materials (Beautifil Bulk Flowable, SDR Flow, Filtek Bulk Fill Flow, and x‑tra Base Bulk Fill). Materials and Methods: Six specimens of each material with a thickness of 1 mm were prepared, and ...

  10. Bulk sulfur (S) deposition in China (United States)

    Liu, Lei; Zhang, Xiuying; Wang, Shanqian; Zhang, Wuting; Lu, Xuehe


    A systematic dataset of an observation network on a national scale has been organized to investigate the spatial distribution of bulk sulfur (S) deposition (Sdep) throughout China during 2000-2013, representing by far the most detailed data set to track the bulk sulfur deposition throughout China since 2000. Such a dataset is needed for ecosystem studies and for developing emission control policies. Bulk Sdep values showed great variations, ranging from 2.17 to 70.55 kg ha-1 y-1, with an average of 22.99 kg ha-1 y-1. The average rate of bulk Sdep located in East Coastal region (35.97 kg ha-1 y-1), Middle Yangtze region (57.90 kg ha-1 y-1), Middle Yellow River region (23.42 kg ha-1 y-1), North Coastal region (42.19 kg ha-1 y-1), Northeast region (34.28 kg ha-1 y-1), South Coastal region (36.97 kg S ha-1 y-1), Southwest region (33.85 kg ha-1 y-1) was 4.50, 7.24, 2.93, 5.28, 4.29, 4.63 and 4.24 times than that in Northwest region (7.99 kg ha-1 y-1). Bulk Sdep over China was mainly from fossil fuel combustion (76.96%), biomass burning (7.64%), crust (6.22%), aged sea salt (5.48%) and agriculture (3.68%). A systematic observation network on a national scale should be established to conduct a long-term monitoring atmospheric Sdep (including wet and dry deposition), based on exiting ecological stations administrated by different departments in China.

  11. Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si (United States)

    Shi, Bei; Li, Qiang; Lau, Kei May


    We report the effects of multi-layer InAs/InAlGaAs quantum dots (QDs) inserted as dislocation filters into an InP thin film epitaxially grown on (001) Si substrates by metalorganic chemical vapor deposition. The surface of the InP-on-Si template using 500 nm GaAs as an intermediate buffer is anti-phase-boundary-free. With the QD filters introduced, a four-fold reduction of dislocation density, to the order of 3.2×108/cm2 was achieved, based on observation of large-area cross-sectional transmission electron microscopy (TEM). The dislocation filtering mechanism was further analyzed through zoomed-in TEM images. Bending or coalescence of threading dislocations in the presence of the strain field induced by the QD filters led to annihilation reactions. Moreover, the improved crystalline quality of the InP above the dislocation filters was manifested by enhanced intensities and reduced full-width at half-maximum values in the statistical room temperature photoluminescence spectra. These results indicate that introducing QD dislocation filters could be beneficial for the epitaxial growth of high quality 1.55 μm band lasers on a Si manufacturing platform.

  12. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu


    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  13. Perbandingan tingkat kebocoran mikro resin komposit bulk-filldengan teknik penumpatan oblique incremental dan bulk

    Directory of Open Access Journals (Sweden)

    Dimas Puja Permana


    Full Text Available Micoleakage comparison of bulk-fillcomposite beetwen oblique incremental and bulk placement techniques. Resin composite bulk-fill was a new type of resin composite that speed up application process of composite. The concept of bulk-fill composite allows composite to fill at a depth of 4 mm and minimizes polymerization shrinkage. This study aims to determine the comparison of placement techniques (oblique incremental/bulk of bulk-fill composite on microleakage in class I preparations. Thirty two human maxillary premolar were stored in distilled water, then Class I preparations were made with the depth of the cavity which was 4 mm (3 x 3 x 4. The teeth were randomly divided into two groups, group 1 uses oblique incremental placement technique and group 2 with bulk placement technique. Samples were stored in an incubator at a temperature of 37 °C for 24 hours, then it was thermocycled manually, 100 cycles at temperature between 5 °C and 55 °C. Microleakage was measured using a digital microscope with a 100 X magnification in millimeters using a microscope micrometer calibration ruler with 0,1 mm level of accuracy after immersion in 0,3% methylene blue and sectioned using separating disc. The result of this study revealed that in group 1 microleakage range was 1.0 mm - 2.7 mm with an average 1.625 mm, and in group 2 microleakage range was 3.6 mm - 4.0 mm with an average of 3.763 mm. The data were analyzed using T-test. The analysis showed a significant difference between two groups (p <0.05. The conclusion of this study was bulk-fill composite in class I cavities with oblique incremental placement technique produces less microleakage than bulk placement technique.   ABSTRAK Resin komposit bulk-fill adalah resin komposit yang dirancang untuk mempercepat proses aplikasi resin komposit. Konsep bulk-fill memungkinkan resin komposit ditumpat sekaligus 4 mm dan mengalami pengerutan polimerisasi minimal. Penelitian ini bertujuan mengetahui efek teknik

  14. Structural determinants in the bulk heterojunction. (United States)

    Acocella, Angela; Höfinger, Siegfried; Haunschmid, Ernst; Pop, Sergiu C; Narumi, Tetsu; Yasuoka, Kenji; Yasui, Masato; Zerbetto, Francesco


    Photovoltaics is one of the key areas in renewable energy research with remarkable progress made every year. Here we consider the case of a photoactive material and study its structural composition and the resulting consequences for the fundamental processes driving solar energy conversion. A multiscale approach is used to characterize essential molecular properties of the light-absorbing layer. A selection of bulk-representative pairs of donor/acceptor molecules is extracted from the molecular dynamics simulation of the bulk heterojunction and analyzed at increasing levels of detail. Significantly increased ground state energies together with an array of additional structural characteristics are identified that all point towards an auxiliary role of the material's structural organization in mediating charge-transfer and -separation. Mechanistic studies of the type presented here can provide important insights into fundamental principles governing solar energy conversion in next-generation photovoltaic devices.

  15. Bulk and shear viscosity in Hagedorn fluid

    Energy Technology Data Exchange (ETDEWEB)

    Tawfik, A.; Wahba, M. [Egyptian Center for Theoretical Physics (ECTP), MTI University, Faculty of Engineering, Cairo (Egypt)


    Assuming that the Hagedorn fluid composed of known particles and resonances with masses m <2 GeV obeys the first-order theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium of hadron resonances are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the in-medium thermal effects on bulk and shear viscosity and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equilibrium thermodynamics and the cosmological models, which require thermo- and hydro-dynamics equations of state. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Enhanced bulk polysilicon production using silicon tubes (United States)

    Jafri, Ijaz; Chandra, Mohan; Zhang, Hui; Prasad, Vish; Reddy, Chandra; Amato-Wierda, Carmela; Landry, Marc; Ciszek, Ted


    A novel technique using silicon tubes for the production of bulk polysilicon via chemical vapor deposition is presented. Our experimental studies with a model reactor indicate that the polysilicon growth inside the silicon tube (15.3 g) exceeds that of the calculated polysilicon growth on silicon slim rods (4.3 g) over 55 h of deposition time. A computational model is also being developed to simulate the growth rates of the model reactor. Preliminary computational results from this model show a slightly asymmetric temperature distribution at the reactor center line with a 1000 sccm argon flow at 850°C reactor temperature. Both these experimental and computational modeling studies have identified key criteria for the prototype reactor being designed for bulk polysilicon growth.

  17. Internal shear cracking in bulk metal forming

    DEFF Research Database (Denmark)

    Christiansen, Peter; Nielsen, Chris Valentin; Bay, Niels Oluf


    This paper presents an uncoupled ductile damage criterion for modelling the opening and propagation of internal shear cracks in bulk metal forming. The criterion is built upon the original work on the motion of a hole subjected to shear with superimposed tensile stress triaxiality and its overall...... performance is evaluated by means of side-pressing formability tests in Aluminium AA2007-T6 subjected to different levels of pre-strain. Results show that the new proposed criterionis able to combine simplicity with efficiency for predicting the onset of fracture and the crack propagation path for the entire...... cracking to internal cracks formed undert hree-dimensional states of stress that are typical of bulk metal forming....

  18. Microfabricated bulk wave acoustic bandgap device (United States)

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol


    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  19. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei


    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  20. A large-scale biomass bulk terminal


    Wu, M.R.


    This research explores the possibility of a large-scale bulk terminal in West Europe dedicated to handle solid and liquid biomass materials. Various issues regarding the conceptual design of such a terminal have been investigated and demonstrated in this research: the potential biomass materials that will be the major international trade flows in the future, the characteristics of these potential biomass materials, the interaction between the material properties and terminal equipment, the pe...

  1. Raman characterization of bulk ferromagnetic nanostructured graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pardo, Helena, E-mail: [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Divine Khan, Ngwashi [Mantfort University, Leicester (United Kingdom); Faccio, Ricardo [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Araujo-Moreira, F.M. [Grupo de Materiais e Dispositivos-CMDMC, Departamento de Fisica e Engenharia Fisica, UFSCar, Caixa Postal 676, 13565-905, Sao Carlos SP (Brazil); Fernandez-Werner, Luciana [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay)


    Raman spectroscopy was used to characterize bulk ferromagnetic graphite samples prepared by controlled oxidation of commercial pristine graphite powder. The G:D band intensity ratio, the shape and position of the 2D band and the presence of a band around 2950 cm{sup -1} showed a high degree of disorder in the modified graphite sample, with a significant presence of exposed edges of graphitic planes as well as a high degree of attached hydrogen atoms.

  2. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.


    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Longitudinal bulk a coustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja


    Design, fabrication and characterization, in terms of mass sensitivity, is presented for a polycrystalline silicon longitudinal bulk acoustic cantilever. The device is operated in air at 51 MHz, resulting in a mass sensitivity of 100 HZ/fg (1 fg = 10{su−15 g). The initial characterization...... is conducted by depositing a minute mass by means of focused ion beam. The total noise in the currently applied measurement system allows for a mass resolution of 0.4 fg in air....

  4. Scaling Bulk Data Analysis with Mapreduce (United States)


    Writing Bulk_Extractor MapReduce 101 List of References 105 viii Initial Distribution List 113 ix THIS PAGE INTENTIONALLY LEFT BLANK x List of Figures...dedicated Experts -Formal definition presented -Large technology growth
 -Everyone has email, cell phones, networks Adolescence
 -Growth in Academics ...period is where we see those requirements come to fruition with an explosive growth into the academic community. This period marks a point where research

  5. An Extended Hardness Limit in Bulk Nanoceramics (United States)


    to fabricate bulk, fully dense and high-purity nanocrystalline ceramics with unprecedentedly small nanometer- sized grains. Using magnesium aluminate ...nanocrystalline ceramic sintered at 2 GPa and 795 C. The diffraction peaks correspond to stoichiometric magnesium aluminate [42] and a nickel ring that found to be 3.6005 ± 0.0079 g cm3, which is equal to that of stoichiometric magnesium aluminate [43] and reveals that the produced ceramics are

  6. Activities report of the National Space Research Institute Plasma Laboratory for the period 1988/1989; Relatorio de atividades do Laboratorio Associado de Plasma do INPE no bienio 88/89

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Gerson Otto


    This report describes the activities performed in the period 1988/1989 by the National Space Research Institute (INPE/SCT) Plasma Laboratory (LAP). The report presents the main results in the following research lines: plasma physics, plasma technology, and controlled thermonuclear fusion. (author). 49 figs., 3 tabs.

  7. Budker INP in ATLAS

    CERN Multimedia


    The Novosibirsk group has proposed a new design for the ATLAS liquid argon electromagnetic end-cap calorimeter with a constant thickness of absorber plates. This design has signifi- cant advantages compared to one in the Technical Proposal and it has been accepted by the ATLAS Collaboration. The Novosibirsk group is responsible for the fabrication of the precision aluminium structure for the e.m.end-cap calorimeter.

  8. Tailoring Magnetic Properties in Bulk Nanostructured Solids (United States)

    Morales, Jason Rolando

    Important magnetic properties and behaviors such as coercivity, remanence, susceptibility, energy product, and exchange coupling can be tailored by controlling the grain size, composition, and density of bulk magnetic materials. At nanometric length scales the grain size plays an increasingly important role since magnetic domain behavior and grain boundary concentration determine bulk magnetic behavior. This has spurred a significant amount of work devoted to developing magnetic materials with nanometric features (thickness, grain/crystallite size, inclusions or shells) in 0D (powder), 1D (wires), and 2D (thin films) materials. Large 3D nanocrystalline materials are more suitable for many applications such as permanent magnets, magneto-optical Faraday isolators etc. Yet there are relatively few successful demonstrations of 3D magnetic materials with nanoscale influenced properties available in the literature. Making dense 3D bulk materials with magnetic nanocrystalline microstructures is a challenge because many traditional densification techniques (HIP, pressureless sintering, etc.) move the microstructure out of the "nano" regime during densification. This dissertation shows that the Current Activated Pressure Assisted Densification (CAPAD) method, also known as spark plasma sintering, can be used to create dense, bulk, magnetic, nanocrystalline solids with varied compositions suited to fit many applications. The results of my research will first show important implications for the use of CAPAD for the production of exchange-coupled nanocomposite magnets. Decreases in grain size were shown to have a significant role in increasing the magnitude of exchange bias. Second, preferentially ordered bulk magnetic materials were produced with highly anisotropic material properties. The ordered microstructure resulted in changing magnetic property magnitudes (ex. change in coercivity by almost 10x) depending on the relative orientation (0° vs. 90°) of an externally

  9. Ultra-broadband Superradiant Pulses from Femtosecond Laser Pumped InP based Quantum Well Laser Diode (United States)

    Liu, Jingjing

    Laser techniques, such as gain / Q switching, mode-locking, have successfully overcome the energy restriction of gain clamping in the stead-state operated lasers, and allowed the generation of giant pulses with short pulse durations. However, gain saturation further limits the amount of stored energy in a gain medium, and therefore limits the possible maximum pulse energy obtained by laser techniques. Here we circumvent both gain clamping and the capacity limitation of energy storage by operating the double-quantum-well laser diode chips on ultrafast gain-switching model using femtosecond (fs) laser pulses as the optical pump. The advantage of our pumping approach is that the fs pulse can instantly produce a very large number of carriers, and therefore enable the formation of non-equilibrium coherent e-h BCS-like condensate state in a large energy region from the lowest QW subband edges to the highest subband and then obtain the ultra-broadband superradiant pulses. Superradiance (SR) or the coherent spontaneous emission is not a new quantum optics phenomenon, which has been proposed in 1954 by R. Dicke, even earlier than the invention of laser. It is famous as by its ultrashort duration, high peak power, high coherence and high timing jitter. Recently, femtosecond SR pulses have been generated from semiconductors. This investigation has revived both theoretical and experimental studies of SR emission. In this thesis, we have demonstrated the generation of intense, delayed SR pulses from the InP based double quantum well laser diode at room temperature. The 1040 nm femtosecond laser was applied as the optical pumping source, and when the pump power is high enough, the cooperative recombination of e-h pairs from higher order quantum energy levels can occur to generate SR bursts earlier than the cooperative emission from the lower quantum energy levels. Then, ultra-broadband TM polarized SR pulses have been firstly generated at room temperature. Our experiments also

  10. Materials for Bulk Acoustic Resonators and Filters (United States)

    Loebl, Hans-Peter


    Highly selective solidly mounted bulk acoustic wave (BAW) band pass filters are suited for mobile and wireless systems in the GHz frequency range between 0.8 and 10 GHz. Electro-acoustic thin film BAW resonators are the building blocks these BAW filters. Piezoelectric materials used in these resonators include mainly AlN or ZnO which can be deposited by dedicated thin film sputter deposition techniques. Using these piezo-electric materials and using suited materials for the acoustic Bragg reflector, BAW resonators with high quality factors can be fabricated. The achievable filter bandwidth is approximately 4Alternatively, also ferroelectric thin films might be used to achieve higher coupling coefficient and thus filter bandwidth. BAW resonators and filters have been designed and fabricated on 6" Silicon and glass wafers. Results are presented for resonators and filters operating between 1.95 and 8 GHz. The talk will give an overview of the material aspects which are important for BAW devices. It will be shown that modeling of the resonator and filter response using 1D electro-acoustic simulation (1,2) which includes losses is essential to extract acoustic and electrical material parameters. (1) Solidly Mounted Bulk Acoustic Wave Filters for the Ghz Frequency Range, H.P. Loebl, C. Metzmacher , D.N.Peligrad , R. Mauczok , M. Klee , W. Brand , R.F. Milsom , P.Lok , F.van Straten , A. Tuinhout , J.W.Lobeek, IEEE 2002 Ultrasonics Symposium Munich, October 2002. (2) Combined Acoustic-Electromagnetic Simulation Of Thin-Film Bulk Acoustic Wave Filters, R.F. Milsom, H-P. Löbl, D.N. Peligrad, J-W. Lobeek, A. Tuinhout, R. H. ten Dolle IEEE 2002 Ultrasonics Symposium Munich, October 2002.

  11. Extraordinary plasticity of ductile bulk metallic glasses. (United States)

    Chen, Mingwei; Inoue, Akihisa; Zhang, Wei; Sakurai, Toshio


    Shear bands generally initiate strain softening and result in low ductility of metallic glasses. In this Letter, we report high-resolution electron microscope observations of shear bands in a ductile metallic glass. Strain softening caused by localized shearing was found to be effectively prevented by nanocrystallization that is in situ produced by plastic flow within the shear bands, leading to large plasticity and strain hardening. These atomic-scale observations not only well explain the extraordinary plasticity that was recently observed in some bulk metallic glasses, but also reveal a novel deformation mechanism that can effectively improve the ductility of monolithic metallic glasses.

  12. "Work-Hardenable" ductile bulk metallic glass. (United States)

    Das, Jayanta; Tang, Mei Bo; Kim, Ki Buem; Theissmann, Ralf; Baier, Falko; Wang, Wei Hua; Eckert, Jürgen


    Usually, monolithic bulk metallic glasses undergo inhomogeneous plastic deformation and exhibit poor ductility (glass, which exhibits high strength of up to 2265 MPa together with extensive "work hardening" and large ductility of 18%. Significant increase in the flow stress was observed during deformation. The "work-hardening" capability and ductility of this class of metallic glass is attributed to a unique structure correlated with atomic-scale inhomogeneity, leading to an inherent capability of extensive shear band formation, interactions, and multiplication of shear bands.

  13. Multiphase composites with extremal bulk modulus

    DEFF Research Database (Denmark)

    Gibiansky, L. V.; Sigmund, Ole


    This paper is devoted to the analytical and numerical study of isotropic elastic composites made of three or more isotropic phases. The ranges of their effective bulk and shear moduli are restricted by the Hashin-Shtrikman-Walpole (HSW) bounds. For two-phase composites, these bounds are attainabl...... isotropic three-dimensional three-phase composites with cylindrical inclusions of arbitrary cross-sections (plane strain problem) or transversely isotropic thin plates (plane stress or bending of plates problems). (C) 2000 Elsevier Science Ltd. All rights reserved....

  14. Towards bulk based preconditioning for quantum dotcomputations

    Energy Technology Data Exchange (ETDEWEB)

    Dongarra, Jack; Langou, Julien; Tomov, Stanimire; Channing,Andrew; Marques, Osni; Vomel, Christof; Wang, Lin-Wang


    This article describes how to accelerate the convergence of Preconditioned Conjugate Gradient (PCG) type eigensolvers for the computation of several states around the band gap of colloidal quantum dots. Our new approach uses the Hamiltonian from the bulk materials constituent for the quantum dot to design an efficient preconditioner for the folded spectrum PCG method. The technique described shows promising results when applied to CdSe quantum dot model problems. We show a decrease in the number of iteration steps by at least a factor of 4 compared to the previously used diagonal preconditioner.

  15. Improving the bulk data transfer experience

    Energy Technology Data Exchange (ETDEWEB)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo


    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  16. Binary Ni-Nb bulk metallic glasses (United States)

    Xia, L.; Li, W. H.; Fang, S. S.; Wei, B. C.; Dong, Y. D.


    We studied the glass forming ability of Ni-Nb binary alloys and found that some of the alloys can be prepared into bulk metallic glasses by a conventional Cu-mold casting. The best glass former within the compositional range studied is off-eutectic Ni62Nb38 alloy, which is markedly different from those predicted by the multicomponent and deep eutectic rules. The glass formation mechanism for binary Ni-Nb alloys was studied from the thermodynamic point of view and a parameter γ* was proposed to approach the ability of glass formation against crystallization.

  17. Cosmological Brane World Solutions with Bulk Scalar Fields


    Davis, Stephen C.


    Cosmological brane world solutions are found for five-dimensional bulk spacetimes with a scalar field. A supergravity inspired method for obtaining static solutions is combined with a method for finding brane cosmologies with constant bulk energies. This provides a way to generate full (bulk and brane) cosmological solutions to brane worlds with bulk scalar fields. Examples of these solutions, and their cosmological evolution, are discussed.

  18. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail:; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Kundu, Souvik [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)


    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.

  19. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate. (United States)

    Shuhui, Zhang; Lu, Wang; Zhenwu, Shi; Yanxiang, Cui; Haitao, Tian; Huaiju, Gao; Haiqiang, Jia; Wenxin, Wang; Hong, Chen; Liancheng, Zhao


    We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor.

  20. Purification and In Situ Ligand Exchange of Metal-Carboxylate-Treated Fluorescent InP Quantum Dots via Gel Permeation Chromatography. (United States)

    Roberge, Adam; Stein, Jennifer L; Shen, Yi; Cossairt, Brandi M; Greytak, Andrew B


    Recently the addition of M(2+) Lewis acids (M = Cd, Zn) to InP quantum dots (QDs) has been shown to enhance the photoluminescence quantum yield (PL QY). Here we investigate the stability of this Lewis acid layer to postsynthetic processing such as purification and ligand exchange. We utilize gel permeation chromatography to purify the quantum-dot samples as well as to aid in the ligand-exchange reactions. The Lewis-acid-capped particles are stable to purification and maintain the enhanced luminescence properties. We demonstrate successful ligand exchange on the quantum dots by switching the native carboxylate ligands to phosphonate ligands. Changes in the optical spectra after exposure to ambient environment indicate that both carboxylate- and phosphonate-capped QDs remain air-sensitive.

  1. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate (United States)

    Qui, Y.; Uhl, D.; Keo, S.


    Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

  2. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yu, E-mail:; Bertru, Nicolas; Folliot, Hervé; Rohel, Tony [Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes Cedex 7 (France); Mauger, Samuel J. C.; Koenraad, Paul M. [COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven (Netherlands)


    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  3. Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Y. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States)], E-mail:; Mintairov, A.M.; He, Y.; Merz, J.L. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556 (United States); Kalyuzhnyy, N.A.; Lantratov, V.M.; Mintairov, S.A. [Ioffe Physical Technical Institute, St. Petersburg (Russian Federation)


    Using wafer bonding (WB) and wet oxidation (WO) techniques, GaInP microdisks having an asymmetric waveguide (diameters D=1-3 {mu}m) with embedded InP quantum dots (size/density {approx}100 nm/{approx}10{sup 9} cm{sup -2}) have been fabricated on Si and GaAs substrates, respectively. The TE{sub m,l} (m=28-12, l=1,2) and TM{sub m,l} (m=25-10, l=1-4) whispering gallery modes with quality factors Q{approx}2-5x10{sup 3} have been identified in photoluminescence spectra of these microdisks (MDs) in the spectral range 720-770 nm. Lasing thresholds of 6 (30) {mu}W and mode coupling constants 0.9 (0.7) have been demonstrated for WO (WB) MDs.

  4. Low-field electron mobility and thermoelectric power in In1-xGaxAsyP1-y lattice-matched to InP (United States)

    Sutradhar, S. K.; Chattopadhyay, D.; Nag, B. R.


    Electron drift and Hall mobility, and thermoelectric power in In1-xGaxAsyP1-y, lattice-matched to InP, are calculated for different temperatures and compositions. The two-mode nature of the polar optic phonons is considered jointly with deformation-potential acoustic, piezoelectric, alloy, ionized-impurity, and electron-electron scattering. Band nonparabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. The Boltzmann equation is solved by an iterative method using the currently established values of the material parameters. The agreement with the available experimental data is found to be satisfactory.

  5. 19 CFR 151.24 - Unlading facilities for bulk sugar. (United States)


    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

  6. Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes. (United States)

    Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan


    Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

  7. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas


    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  8. Direct correlations between XPS analyses and growth film by chronopotentiometry on InP in liquid ammonia (-55 °C) (United States)

    Gonçalves, A.-M.; Njel, C.; Aureau, D.; Etcheberry, A.


    This paper is based on the understanding of the formation of a reproducible polyphosphazene-like film (sbnd [(H2N)sbnd Pdbnd N]nsbnd) obtained on InP by anodic treatment in liquid ammonia. The approach is innovative as it combines indications from the coulometric charges and the related chemical information from XPS analyses. Anodic charges are accurately monitored by galvanostatic treatment between 0.05 mC cm-2 and 12.5 mC cm-2. XPS investigation of the treated surfaces demonstrates the presence of an anodic film on InP. Whatever the spent charge, the specific P2p and N1s signals agree with the growth of an ultrathin phosphazene layer. From 0.25 mC cm-2 to 12.5 mC cm-2, a quasi constant XPS response is revealed without thickening of the film. However a gradual chemical evolution of the modified surface is clearly observed for the lower anodic charges (from 0.04 mC cm-2 to 0.5 mC cm-2). In this case, the surface is entirely recovered by the film as soon as 0.25 mC cm-2 is consumed at the interface. Same atomic surface ratios are indeed revealed indicating that a constant chemical composition is consistent with a polyphosphazene film. On the basis of atomic surface ratios evolutions determined by XPS, a mechanism of the film growth is deduced. It requires a nucleation step which is followed by a phosphazene coalescence phenomenon in the two dimensions of the surface. A final phosphazene monolayer film is suggested if a sufficient anodic charge spent at the interface is considered, allowing a quantitative discussion related to electrochemical and XPS data.

  9. Use of containers to carry bulk and break bulk commodities and its impact on gulf region ports and international trade. (United States)


    The University of New Orleans Transportation Institute was tasked by the Louisiana Transportation Research Center (LTRC) in mid-2012 to assess the use of containers to transport bulk and break bulk commodities and to determine what their impact would...

  10. Bulk magnetic domain stability controls paleointensity fidelity (United States)

    Paterson, Greig A.; Muxworthy, Adrian R.; Yamamoto, Yuhji; Pan, Yongxin


    Nonideal, nonsingle-domain magnetic grains are ubiquitous in rocks; however, they can have a detrimental impact on the fidelity of paleomagnetic records—in particular the determination of ancient magnetic field strength (paleointensity), a key means of understanding the evolution of the earliest geodynamo and the formation of the solar system. As a consequence, great effort has been expended to link rock magnetic behavior to paleointensity results, but with little quantitative success. Using the most comprehensive rock magnetic and paleointensity data compilations, we quantify a stability trend in hysteresis data that characterizes the bulk domain stability (BDS) of the magnetic carriers in a paleomagnetic specimen. This trend is evident in both geological and archeological materials that are typically used to obtain paleointensity data and is therefore pervasive throughout most paleomagnetic studies. Comparing this trend to paleointensity data from both laboratory and historical experiments reveals a quantitative relationship between BDS and paleointensity behavior. Specimens that have lower BDS values display higher curvature on the paleointensity analysis plot, which leads to more inaccurate results. In-field quantification of BDS therefore reflects low-field bulk remanence stability. Rapid hysteresis measurements can be used to provide a powerful quantitative method for preselecting paleointensity specimens and postanalyzing previous studies, further improving our ability to select high-fidelity recordings of ancient magnetic fields. BDS analyses will enhance our ability to understand the evolution of the geodynamo and can help in understanding many fundamental Earth and planetary science questions that remain shrouded in controversy.

  11. Boundary-bulk relation in topological orders

    Directory of Open Access Journals (Sweden)

    Liang Kong


    Full Text Available In this paper, we study the relation between an anomaly-free n+1D topological order, which are often called n+1D topological order in physics literature, and its nD gapped boundary phases. We argue that the n+1D bulk anomaly-free topological order for a given nD gapped boundary phase is unique. This uniqueness defines the notion of the “bulk” for a given gapped boundary phase. In this paper, we show that the n+1D “bulk” phase is given by the “center” of the nD boundary phase. In other words, the geometric notion of the “bulk” corresponds precisely to the algebraic notion of the “center”. We achieve this by first introducing the notion of a morphism between two (potentially anomalous topological orders of the same dimension, then proving that the notion of the “bulk” satisfies the same universal property as that of the “center” of an algebra in mathematics, i.e. “bulk = center”. The entire argument does not require us to know the precise mathematical description of a (potentially anomalous topological order. This result leads to concrete physical predictions.

  12. Substantial bulk photovoltaic effect enhancement via nanolayering (United States)

    Wang, Fenggong; Young, Steve M.; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M.


    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)1-x). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition.

  13. Perovskite oxides: Oxygen electrocatalysis and bulk structure (United States)

    Carbonio, R. E.; Fierro, C.; Tryk, D.; Scherson, D.; Yeager, Ernest


    Perovskite type oxides were considered for use as oxygen reduction and generation electrocatalysts in alkaline electrolytes. Perovskite stability and electrocatalytic activity are studied along with possible relationships of the latter with the bulk solid state properties. A series of compounds of the type LaFe(x)Ni1(-x)O3 was used as a model system to gain information on the possible relationships between surface catalytic activity and bulk structure. Hydrogen peroxide decomposition rate constants were measured for these compounds. Ex situ Mossbauer effect spectroscopy (MES), and magnetic susceptibility measurements were used to study the solid state properties. X ray photoelectron spectroscopy (XPS) was used to examine the surface. MES has indicated the presence of a paramagnetic to magnetically ordered phase transition for values of x between 0.4 and 0.5. A correlation was found between the values of the MES isomer shift and the catalytic activity for peroxide decomposition. Thus, the catalytic activity can be correlated to the d-electron density for the transition metal cations.

  14. 75 FR 34573 - Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes... (United States)


    ... IAEA International Atomic Energy Agency IMDG Code International Maritime Dangerous Goods Code IMO... authorized for bulk transportation by vessel and include special handling procedures based on the IMSBC Code... Management Facility (M-30), U.S. Department of Transportation, West Building Ground Floor, Room W12-140, 1200...

  15. Diffusion and bulk flow in phloem loading

    DEFF Research Database (Denmark)

    Dölger, Julia; Rademaker, Hanna; Liesche, Johannes


    diffusing back requires that the plasmodesmata connecting the bundle sheath with the intermediary cell act as extremely precise filters, which are able to distinguish between molecules that differ by less than 20% in size. In our modeling, we take into account the coupled water and sugar movement across......%-20% to the sucrose flux into the intermediary cells, while the main part is transported by diffusion. On the other hand, the subsequent sugar translocation into the sieve elements would very likely be carried predominantly by bulk water flow through the plasmodesmata. Thus, in contrast to apoplasmic loaders, all...... of molecular sizes. Comparing with the somewhat uncertain experimental values for sugar export rates, we expect the pores to be only 5%-10% larger than the hydraulic radius of the sucrose molecules. We find that the water flow through the plasmodesmata, which has not been quantified before, contributes only 10...

  16. Organoboron polymers for photovoltaic bulk heterojunctions. (United States)

    Cataldo, Sebastiano; Fabiano, Simone; Ferrante, Francesco; Previti, Francesco; Patanè, Salvatore; Pignataro, Bruno


    We report on the application of three-coordinate organoboron polymers, inherently strong electron acceptors, in flexible photovoltaic (PV) cells. Poly[(1,4-divinylenephenylene)(2,4,6-triisopropylphenylborane)] (PDB) has been blended with poly(3-hexylthiophene-2,5-diyl) (P3HT) to form a thin film bulk heterojunction (BHJ) on PET/ITO substrates. Morphology may be modulated to give a high percentage of domains (10-20 nm in size) allowing exciton separation. The photoelectric properties of the BHJs in devices with aluminium back electrodes were imaged by light beam induced current (LBIC) and light beam induced voltage (LBIV) techniques. Open circuit voltages, short circuit currents and overall external quantum efficiencies obtained are among the highest reported for all-polymer PV cells. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. A route to transparent bulk metals

    KAUST Repository

    Schwingenschlögl, Udo


    Hypothetical compounds based on a sapphire host are investigated with respect to their structural as well as electronic features. The results are obtained by electronic structure calculations within density functional theory and the generalized gradient approximation. A quarter of the Al atoms in Al 2O 3 is replaced by a 4d transition metal M ion, with d 0 to d 9 electronic configuration. We perform structure optimizations for all the compounds and analyze the electronic states. Due to the sizeable band gap of the Al 2O 3 host, we can identify promising candidates for transparent bulk metals. We explain the mechanisms leading to this combination of materials properties. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Holographic bulk viscosity: GPR vs EO

    CERN Document Server

    Buchel, Alex; Kiritsis, Elias


    Recently Eling and Oz (EO) proposed a formula for the holographic bulk viscosity, in arXiv:1103.1657, derived from the null horizon focusing equation. This formula seems different from that obtained earlier by Gubser, Pufu and Rocha (GPR) in arXiv:0806.0407 calculated from the IR limit of the two-point function of the trace of the stress tensor. The two were shown to agree only for some simple scaling cases. We point out that the two formulae agree in two non-trivial holographic theories describing RG flows. The first is the strongly coupled N=2* gauge theory plasma. The second is the semi-phenomenological model of Improved Holographic QCD.

  19. Tuneable film bulk acoustic wave resonators

    CERN Document Server

    Gevorgian, Spartak Sh; Vorobiev, Andrei K


    To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high.  Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the softwa...

  20. Interface control of bulk ferroelectric polarization

    Energy Technology Data Exchange (ETDEWEB)

    Yu, P [University of California, Berkeley; Luo, Weidong [ORNL; Yi, D. [University of California, Berkeley; Zhang, J.-X. [University of California, Berkeley; Rossell, M.D. [Lawrence Berkeley National Laboratory (LBNL); Yang, C.-H. [Korea Advanced Institute of Science and Technology; You, L. [University of California, Berkeley; Singh-Bhalla, G. B. [University of California, Berkeley & LBNL; Yang, S.Y [University of California, Berkeley; He, Q [University of California, Berkeley; Ramasse, Q. M. [Lawrence Berkeley National Laboratory (LBNL); Erni, R. [Lawrence Berkeley National Laboratory (LBNL); Martin, L. W. [University of Illinois, Urbana-Champaign; Chu, Y. H. [University of California, Berkeley; Pantelides, Sokrates T [ORNL; Pennycook, Stephen J [ORNL; Ramesh, R. [University of California, Berkeley


    The control of material interfaces at the atomic level has led to no- vel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we em- ploy a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite un- derlayers extends the generality of this phenomenon.

  1. Criticality in Bulk Metallic Glass Constituent Elements (United States)

    Mota, Rodrigo Miguel Ojeda; Graedel, T. E.; Pekarskaya, Evgenia; Schroers, Jan


    Bulk metallic glasses (BMGs), which readily form amorphous phases during solidification, are increasingly being used in first applications of watch components, electronic casings, and sporting goods. The compositions of BMGs typically include four to six elements. Various political and geological factors have recently led to supply disruptions for several metals, including some present in BMG compositions. In this work, we assess the "criticality" of 22 technologically interesting BMG compositions, compare the results with those for three common engineering alloy groups, and derive recommendations for BMG composition choices from a criticality perspective. The criticality of BMGs is found to be generally much higher compared with those for the established engineering alloys. Therefore, criticality concerns should also be considered in the choice between existing and developing novel BMGs.

  2. Bulk disk resonator based ultrasensitive mass sensor

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Davis, Zachary James


    In the framework of developing an innovative label-free sensor for multiarrayed biodetection applications, we present a novel bulk resonator based mass sensor. The sensor is a polysilicon disk which shows a Q-factor of 6400 in air at 68.8 MHz, resulting in mass resolutions down in the femtogram...... range. The sensor has been characterized in terms of sensitivity both for distributed mass detection, performing six consecutive depositions of e-beam evaporated Au, and localized mass detection, depositing approximately 7.5 pg of Pt/Ga/C three times consecutively with a Focused Ion Beam system....... The sensor has an extremely high distributed mass to frequency shift sensitivity of 60104 Hzcm2/¿g and shows a localized mass to frequency sensitivity up to 4405 Hz/pg with a localized mass resolution down to 15 fg. The device has been fabricated with a new microfabrication process that uses only two...

  3. How Many Bulk Metallic Glasses Are There? (United States)

    Li, Yanglin; Zhao, Shaofan; Liu, Yanhui; Gong, Pan; Schroers, Jan


    Quantitative prediction of glass forming ability using a priori known parameters is highly desired in metallic glass development; however proven to be challenging because of the complexity of glass formation. Here, we estimate the number of potential metallic glasses (MGs) and bulk metallic glasses (BMGs) forming systems and alloys, from empirically determined alloy design rules based on a priori known parameters. Specifically, we take into account atomic size ratio, heat of mixing, and liquidus temperature, which we quantify on binary glasses and centimeter-sized BMGs. When expanding into higher order systems that can be formed among 32 practical elements, we reduce the composition space for BMG formation using developed criteria by 106 times and estimate ∼3 million binary, ternary, quaternary, and quinary BMGs alloys.

  4. Rotary adsorbers for continuous bulk separations (United States)

    Baker, Frederick S [Oak Ridge, TN


    A rotary adsorber for continuous bulk separations is disclosed. The rotary adsorber includes an adsorption zone in fluid communication with an influent adsorption fluid stream, and a desorption zone in fluid communication with a desorption fluid stream. The fluid streams may be gas streams or liquid streams. The rotary adsorber includes one or more adsorption blocks including adsorbent structure(s). The adsorbent structure adsorbs the target species that is to be separated from the influent fluid stream. The apparatus includes a rotary wheel for moving each adsorption block through the adsorption zone and the desorption zone. A desorption circuit passes an electrical current through the adsorbent structure in the desorption zone to desorb the species from the adsorbent structure. The adsorbent structure may include porous activated carbon fibers aligned with their longitudinal axis essentially parallel to the flow direction of the desorption fluid stream. The adsorbent structure may be an inherently electrically-conductive honeycomb structure.

  5. Solid state properties from bulk to nano

    CERN Document Server

    Dresselhaus, Mildred; Cronin, Stephen; Gomes Souza Filho, Antonio


    This book fills a gap between many of the basic solid state physics and materials science books that are currently available. It is written for a mixed audience of electrical engineering and applied physics students who have some knowledge of elementary undergraduate quantum mechanics and statistical mechanics. This book, based on a successful course taught at MIT, is divided pedagogically into three parts: (I) Electronic Structure, (II) Transport Properties, and (III) Optical Properties. Each topic is explained in the context of bulk materials and then extended to low-dimensional materials where applicable. Problem sets review the content of each chapter to help students to understand the material described in each of the chapters more deeply and to prepare them to master the next chapters.

  6. Generation and Stability of Bulk Nanobubbles. (United States)

    Oh, Seung Hoon; Kim, Jong-Min


    Recently, extremely small bubbles, referred to as nanobubbles, have drawn increased attention due to their novel properties and great potential for various applications. In this study, a novel method for the generation of bulk nanobubbles (BNBs) was introduced, and stability of fabricated BNBs was investigated. BNBs were created from CO2 gas with a mixing method; the chemical identity and phase state of these bubbles can be determined via infrared spectroscopy. The presence of BNBs was observed with a nanoparticle tracking analysis (NTA). The ATR-FTIR spectra of BNBs indicate that the BNBs were filled with CO2 gas. Furthermore, the BNB concentration and its ζ-potential were about 2.94 × 108 particles/mL and -20 mV, respectively (24 h after BNB generation with a mixing time of 120 min). This indicates the continued existence and stability of BNBs in water for an extended period of time.

  7. Assessment of bioburden encapsulated in bulk materials (United States)

    Schubert, Wayne W.; Newlin, Laura; Chung, Shirley Y.; Ellyin, Raymond


    The National Aeronautics and Space Administration (NASA) imposes bioburden limitations on all spacecraft destined for solar system bodies that might harbor evidence of extant or extinct life. The subset of microorganisms trapped within solid materials during manufacture and assembly is referred to as encapsulated bioburden. In the absence of spacecraft-specific data, NASA relies on specification values to estimate total spacecraft encapsulated bioburden, typically 30 endospores/cm3 or 300 viable cells/cm3 in non-electronic materials. Specification values for endospores have been established conservatively, and represent no less than an order of magnitude greater abundance than that derived from empirical assessments of actual spacecraft materials. The goal of this study was to generate data germane to determining whether revised bulk encapsulated material values (lower than those estimated by historical specifications) tailored specifically to the materials designated in modern-day spacecraft design could be used, on a case-by-case basis, to comply with planetary protection requirements. Organic materials having distinctly different chemical properties and configurations were selected. This required more than one experimental and analytical approach. Filtration was employed for liquid electrolytes, lubricants were suspended in an aqueous solution and solids (wire and epoxy sealant) were cryogenically milled. The final data characteristic for all bioburden estimates was microbial colony formation in rich agar growth medium. To assess survival potential, three non-spore-forming bacterial cell lines were systematically encapsulated in an epoxy matrix, liberated via cryogenic grinding, and cultured. Results suggest that bulk solid materials harbor significantly fewer encapsulated microorganisms than are estimated by specification values. Lithium-ion battery electrolyte reagents housed fewer than 1 CFU/cm3. Results also demonstrated that non-spore-forming microorganisms

  8. Radiopacity of bulk fill flowable resin composite materials. (United States)

    Yildirim, T; Ayar, M K; Akdag, M S; Yesilyurt, C


    The purpose of this study was to evaluate the radiopacity of currently marketed bulk fill flowable dental composite materials (Beautifil Bulk Flowable, SDR Flow, Filtek Bulk Fill Flow, and x-tra Base Bulk Fill). Six specimens of each material with a thickness of 1 mm were prepared, and digital radiographs were taken, using a CCD sensor along with an aluminum stepwedge and 1 mm-thick tooth slice. The mean gray level of each aluminum stepwedge and selected materials was measured, using the equal-density area tool of Kodak Dental Imaging software. The equivalent thickness of aluminum for each material was then calculated by using the stepwedge values in the CurveExpert version 1.4 program. The radiopacity of bulk fill flowable composites sorted in descending order as follows: Beautifil Bulk Flowable (2.96 mm Al) = x-tra base bulk fill (2.92 mm Al) = SureFil SDR Flow (2.89 mm Al) > Filtek Bulk Fill Flow (2.51 mm Al) (P materials had a radiopacity greater than dentin and enamel; their adequate radiopacity will help the clinicians during radiographic examination of restorations. Bulk fill composite materials have greater radiopacity, enabling clinicians to distinguish the bulk fill composites from dentin and enamel.

  9. Locality, bulk equations of motion and the conformal bootstrap

    Energy Technology Data Exchange (ETDEWEB)

    Kabat, Daniel [Department of Physics and Astronomy, Lehman College, City University of New York,250 Bedford Park Blvd. W, Bronx NY 10468 (United States); Lifschytz, Gilad [Department of Mathematics, Faculty of Natural Science, University of Haifa,199 Aba Khoushy Ave., Haifa 31905 (Israel)


    We develop an approach to construct local bulk operators in a CFT to order 1/N{sup 2}. Since 4-point functions are not fixed by conformal invariance we use the OPE to categorize possible forms for a bulk operator. Using previous results on 3-point functions we construct a local bulk operator in each OPE channel. We then impose the condition that the bulk operators constructed in different channels agree, and hence give rise to a well-defined bulk operator. We refer to this condition as the “bulk bootstrap.” We argue and explicitly show in some examples that the bulk bootstrap leads to some of the same results as the regular conformal bootstrap. In fact the bulk bootstrap provides an easier way to determine some CFT data, since it does not require knowing the form of the conformal blocks. This analysis clarifies previous results on the relation between bulk locality and the bootstrap for theories with a 1/N expansion, and it identifies a simple and direct way in which OPE coefficients and anomalous dimensions determine the bulk equations of motion to order 1/N{sup 2}.

  10. Bulk Modulus Relaxation in Partially Molten Dunite? (United States)

    Jackson, I.; Cline, C. J., II


    Synthetic solgel-derived Fo90 olivine was mixed with 3.5 wt % basaltic glass and hot-pressed within Ni/Fe foil to produce a dense aggregate expected to contain a small melt fraction at temperatures ≥ 1100°C. This specimen was precision ground and tested in both torsional and flexural forced oscillation to determine the relaxation behavior of both shear (G) and bulk (K) moduli at seismic frequencies. A recent upgrade of our experimental facility allows such measurements to be made without alteration of the driver/detector geometry, and uses an oscillating bending force rather than a bending moment, as previously described. The torsional and flexural tests were conducted in a gas apparatus at 200 MPa confining pressure, with oscillation periods ranging between 1 and 1000 s, during slow staged-cooling from 1300 to 25°C. Shear modulus and associated dissipation data are consistent with those for melt-bearing olivine specimens previously tested in torsion, with a pronounced dissipation peak superimposed on high-temperature background within the 1-1000 s observational window at temperatures of 1100-1200°C. A filament elongation model relates the observed flexural measurements to the variations along the experimental assembly of the complex Young's modulus (E*), bending moment and diametral moment of inertia. With E* given by 1/E*=1/(3G*) + 1/(9K*), and the complex shear modulus (G*) derived from torsional oscillation, any relaxation of K can be identified. Preliminary modeling shows that the viscoelastic properties in flexure are broadly consistent with those expected from the shear-mode viscoelasticity with anharmonic (real) values of K. However, some discrepancies between modeled results and flexure data at super-solidus temperatures require further investigation of possible differences in shear modulus relaxation between the torsional and flexural modes, and of potential relaxation of the bulk modulus through stress-induced changes in melt redistribution and

  11. The start-up phase of the national satellite forest monitoring systems for DRC and PNG: a joint venture between FAO and INPE (United States)

    Jonckheere, I. G.; FAO UN-REDD Team Forestry Department


    Reducing Emissions from Deforestation and Forest Degradation (REDD) is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. "REDD+" goes beyond deforestation and forest degradation, and includes the role of conservation, sustainable management of forests and enhancement of forest carbon stocks. In the framework of getting countries ready for REDD+, the UN-REDD Programme, a partnership between UNEP, FAO and UNDP, assists developing countries to prepare and implement national REDD+ strategies. Designed collaboratively by a broad range of stakeholders, national UN-REDD Programmes are informed by the technical expertise of FAO, UNDP and UNEP. For the monitoring, reporting and verification, FAO supports the countries to develop satellite forest monitoring systems that allow for credible measurement, reporting and verification (MRV)of REDD+ activities. These are among the most critical elements for the successful implementation of any REDD+ mechanism, also following the COP 16 decisions in Cancun last year. The UN-REDD Programme through a joint effort of FAO and Brazil's National Space Agency, INPE, is supporting countries to develop cost-effective, robust and compatible national monitoring and MRV systems, providing tools, methodologies, training and knowledge sharing that help countries to strengthen their technical and institutional capacity for effective MRV systems. To develop strong nationally-owned forest monitoring systems, technical and institutional capacity building is key. The UN-REDD Programme, through FAO, has taken on intensive training together with INPE, and has provided technical help and assistance for in-country training and implementation for national satellite forest monitoring. The goal of the start-up phase for DRC and Papua New Guinea (PNG) in this capacity building effort is the

  12. Bulk density and relationship air/water of horticultural substrate


    Fernandes,Carolina; Corá, José Eduardo


    Change on substrate bulk density during the growing period may negatively affect other substrate physical properties and, consequently, plant growth. The objectives of this research were 1) to characterize physical properties of two horticultural substrates (S1 and S2), 2) to evaluate the effect of different bulk densities values of those substrates on their air/water relationship, and 3) to develop mathematical functions to estimate the air/water relationship by increasing substrates bulk de...

  13. Isolation and characterization of culturable bacteria from bulk soil ...

    African Journals Online (AJOL)

    Olaf _SK


    Mar 18, 2015 ... pods with large brownish-black oil and protein-rich seeds. (Holse et al., 2010). ... nutrition and increase food availability in arid ecological zones. .... 3. Bulk. Eight. BP6, BP7, BP8, BP9, BP10, BP11, BP12, BP13. 4. Bulk. Three. BP14, BP15, BP16. 5. Bulk. Three. BP17, BP18, BP19. 6. Rhizosphere. Two.

  14. Determination of Bulk Dimensional Variation in Castings

    Energy Technology Data Exchange (ETDEWEB)

    Dr. James F. Cuttino Dr. Edward P. Morse


    The purpose of this work is to improve the efficiency of green sand foundries so that they may continue to compete as the most cost-effective method of fabrication while meeting tightening constraints on near-net shape manufacturing. In order to achieve this objective, the study is divided into two major components. The first component concentrated on identifying which processes control surface finish on the castings and which provide potential reductions in variations. The second component identified metrological methods that effectively discern between the geometry of bulk material versus surface finish in order to more accurately determine the quality of a part. The research resulted in the determination of an empirical relationship relating pouring parameters to dimensional variation, with an R2 value of greater than 0.79. A significant difference in variations obtained from vertical vs. horizontal molding machines was also noticed. When analyzed separately, however, the resulting empirical relationships for horizontal and vertical machines had reduced R2 values, probably due to the reduced data sets. Significant parameters when considering vertical and horizontal molding machines together included surface roughness, pattern type, iron type, pouring rate, copper content, amount of Western Bentonite, and permeability.

  15. FAA bulk technology overview for explosives detection (United States)

    Novakoff, Alan K.


    The Federal Aviation Administration (FAA) is the leading federal agency responsible for encouraging and fostering the development of a safe, secure, and efficient national airspace system (NAS). Our goal is to establish an operating environment that ensures a threat-free system to preclude acts of terrorism and fatalities. As part of the process to meet this goal, our research and development activities continually search for technologies to ensure aviation security. Recent acts of terrorism against the aviation community have demonstrated an increasing level of sophistication in the design and deployment of explosive devices. In order to prevent the introduction of explosives onto an aircraft they must be detected prior to passenger and baggage loading. The Bulk Detection program is one method of developing a number of technologies that 'see' into and 'alarm' on suspect baggage. These detection devices must be capable of providing this serve with a confidence commensurate with the state-of-the- art available today. This program utilizes the expertise of government agencies, universities and industries working toward constructing their plans and executing their designs to produce the best available equipment.

  16. Recent developments of film bulk acoustic resonators (United States)

    Gao, Junning; Liu, Guorong; Li, Jie; Li, Guoqiang


    Film bulk acoustic wave resonator (FBAR) experienced skyrocketing development in the past 15 years, owing to the explosive development of mobile communication. It stands out in acoustic filters mainly because of high quality factor, which enables low insertion loss and sharp roll off. Except for the massive application in wireless communication, FBARs are also promising sensors because of the high sensitivity and readily integration ability to miniaturize circuits. On the ground of summarizing FBAR’s application in wireless communication as filters and in sensors including electronic nose, bio field, and pressure sensing, this paper review the main challenges of each application faced. The number of filters installed in the mobile phone has being grown explosively, which leads to overcrowded bands and put harsh requirements on component size and power consumption control for each unit. Data flow and rate are becoming increasingly demanding as well. This paper discusses three promising technical strategies addressing these issues. Among which coupled resonator filter is given intense attention because it is able to vigorously reduce the filter size by stacking two or more resonators together, and it is a great technique to increase data flow and rate. Temperature compensation methods are discussed considering their vital influence on frequency stability. Finally, materials improvement and novel materials exploration for band width modulation, tunable band acquisition, and quality factor improvement are discussed. The authors appeal attention of the academic society to bring AlN epitaxial thin film into the FBAR fabrication and have proposed a configuration to implement this idea.

  17. Tip-enhanced bulk photovoltaic effect (United States)

    Sturman, B.; Podivilov, E.


    Using the conventional macroscopic description of the bulk photovoltaic effect we analyze the light-induced currents and electric fields arising in the optical configuration with a continuous bottom electrode and a small circular top electrode. This scheme is relevant to recent experiments on the tip-enhanced photovoltaic effect in ferroelectrics. It is shown that a light-induced electric field remains nonzero inside the sample even in the short-circuit regime. Moreover, it is enhanced compared to the photovoltaic field in a large area and strongly enhanced near the top electrode. A field-assisted collection of charge carriers from the illuminated area produces a strong local enhancement of the current density near the top electrode. The tip-enhanced electric field is typically parallel to the photovoltaic current. It is sufficient to repolarize the crystal near the top electrode. The effect of the tip enhancement on the light-current transformation efficiency is considered, and predictions for the tip radius and sample thickness dependencies of the total light-induced current are made.

  18. Photoelectron spectroscopy bulk and surface electronic structures

    CERN Document Server

    Suga, Shigemasa


    Photoelectron spectroscopy is now becoming more and more required to investigate electronic structures of various solid materials in the bulk, on surfaces as well as at buried interfaces. The energy resolution was much improved in the last decade down to 1 meV in the low photon energy region. Now this technique is available from a few eV up to 10 keV by use of lasers, electron cyclotron resonance lamps in addition to synchrotron radiation and X-ray tubes. High resolution angle resolved photoelectron spectroscopy (ARPES) is now widely applied to band mapping of materials. It attracts a wide attention from both fundamental science and material engineering. Studies of the dynamics of excited states are feasible by time of flight spectroscopy with fully utilizing the pulse structures of synchrotron radiation as well as lasers including the free electron lasers (FEL). Spin resolved studies also made dramatic progress by using higher efficiency spin detectors and two dimensional spin detectors. Polarization depend...

  19. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)


    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  20. Simulation of the impacts land use and land cover changes - LUCC on the hydrological response of the Ji-Parana Basin with MGB-INPE model (United States)

    Rodriguez, D. A.; Tomasella, J.


    Hydrological response results from innumerous processes interacting at different spatial and temporal scales and with various intensities. Since the hydrological impacts of Land use and land cover change (LUCC) and climate variability (CV) are strongly dependent on soil water flow pathways, an adequate representation of the runoff generation mechanisms are crucial to assess the hydrological impacts of LUCC and CV on a basin scale. Model responses to LUCC depend on structure and parameterizations used in the model. There are two basic methodologies adopted to define the structure of the hydrological model: downward and upward approaches. Upward approach is more appropriate for identifying causal relationships, but their results are highly affected by assumptions used in the development of the model. Besides, model structure and parameters values definition are strongly affected by scale issues and their inter-relationships. Downward approach is more appropriate for studying the effects of LUCC, but casual relationships are more difficult to identify. MGB-INPE model was developed based on the Large Scale Basins Model of Brazilian Institute of Hydraulic Research (MGB-IPH). It uses the Xinanjiang Model approach for soil water capacity distribution at each cell combined with TopModel philosophy. Both methodologies follow a downward approach: the hydrologic response of the basin is associated with patterns of self-organization observed at the basin-scale. The model was applied in the Ji-Parana Basin (JPB), a 30.000-km2 basin in the SW Amazonia. The JPB is part of the Deforestation Arc of Amazonia in Brazil and it has lost more than 50 % of his forest cover since the 80's. Simulations were performed between 1982 and 2005 considering annual land use and land cover change. MGB-INPE model was able to represent the impact of LUCC in the runoff generation process and its dependence with basin topography. Simulation results agree with observational studies: LUCC impacts in fast

  1. Dilepton radiation and bulk viscosity in heavy-ion collisions (United States)

    Vujanovic, Gojko; Paquet, Jean-François; Shen, Chun; Denicol, Gabriel S.; Jeon, Sangyong; Gale, Charles; Heinz, Ulrich


    Starting from IP-Glasma initial conditions, we investigate the effects of bulk pressure on thermal dilepton production at the Relativistic Heavy Ion Collider (RHIC) and the Large Hadron Collider (LHC) energies. Though results of the thermal dilepton v2 under the influence of both bulk and shear viscosity is presented for top RHIC energy, more emphasis is put on LHC energy where such a calculation is computed for the first time. The effects of the bulk pressure on thermal dilepton v2 at the LHC are explored through bulk-induced modifications on the dilepton yield.

  2. Bulk Vitrification Castable Refractory Block Protection Study

    Energy Technology Data Exchange (ETDEWEB)

    Hrma, Pavel R.; Bagaasen, Larry M.; Beck, Andrew E.; Brouns, Thomas M.; Caldwell, Dustin D.; Elliott, Michael L.; Matyas, Josef; Minister, Kevin BC; Schweiger, Michael J.; Strachan, Denis M.; Tinsley, Bronnie P.; Hollenberg, Glenn W.


    Bulk vitrification (BV) was selected for a pilot-scale test and demonstration facility for supplemental treatment to accelerate the cleanup of low-activity waste (LAW) at the Hanford U.S. DOE Site. During engineering-scale (ES) tests, a small fraction of radioactive Tc (and Re, its nonradioactive surrogate) were transferred out of the LAW glass feed and molten LAW glass, and deposited on the surface and within the pores of the castable refractory block (CRB). Laboratory experiments were undertaken to understand the mechanisms of the transport Tc/Re into the CRB during vitrification and to evaluate various means of CRB protection against the deposition of leachable Tc/Re. The tests used Re as a chemical surrogate for Tc. The tests with the baseline CRB showed that the molten LAW penetrates into CRB pores before it converts to glass, leaving deposits of sulfates and chlorides when the nitrate components decompose. Na2O from the LAW reacts with the CRB to create a durable glass phase that may contain Tc/Re. Limited data from a single CRB sample taken from an ES experiment indicate that, while a fraction of Tc/Re is present in the CRB in a readily leachable form, most of the Tc/Re deposited in the refractory is retained in the form of a durable glass phase. In addition, the molten salts from the LAW, mainly sulfates, chlorides, and nitrates, begin to evaporate from BV feeds at temperatures below 800 C and condense on solid surfaces at temperatures below 530 C. Three approaches aimed at reducing or preventing the deposition of soluble Tc/Re within the CRB were proposed: metal lining, sealing the CRB surface with a glaze, and lining the CRB with ceramic tiles. Metal liners were deemed unsuitable because evaluations showed that they can cause unacceptable distortions of the electric field in the BV system. Sodium silicate and a low-alkali borosilicate glaze were selected for testing. The glazes slowed down molten salt condensate penetration, but did little to reduce the

  3. [Staphylococcus aureus in bulk milk samples]. (United States)

    Benda, P; Vyletĕlová, M


    In the years 1993-1994 the occurrence of Staphylococcus aureus was investigated in bulk milk samples in the area where a Baby Food Factory at Zábreh in Moravia is located, and in Bruntál, Zlín and Policka districts. Evaluation of the results was based on ECC Directive 92/46, while the dynamics of S. aureus presence was followed for the whole period of observation as well as in the particular seasons. A total of 4,485 samples was processed. Out of these, 50.7% contained less than 100 CFU/ml of S. aureus, 41.4% contained 100-500 CFU/ml, 6.73% 500-2,000 CFU/ml and 1.14% contained more than 2,000 CFU/ml (Fig. 1). The samples were divided into three categories: private new-established farms, cooperative and State-owned enterprises in the area of the Zábĕh Factory and others (Zlín, Bruntál and Policka districts). There were highly significant differences in the content of staphylococci (P = 0.01%) between the three categories of samples. Ninety-eight percent of samples from private farms, 96% samples from the Zábreh Factory area and 85% of the other samples comply with the regulation EEC 92/64 (Tab. I) for raw cow's milk for the manufacture of products "made with raw milk" whose manufacturing process does not involve any heat treatment (Fig. 2). The occurrence of S. aureus in the Zábreh Factory area shows an expressive seasonal dynamics (P = 0.005%) with maximum values in winter months (December-March) and minimum values in summer months (July-October)-Fig. 3. The same relationship can be seen on more extensive data files for the particular producers (Fig. 4).(ABSTRACT TRUNCATED AT 250 WORDS)

  4. Xerophilic mycopopulations of teas in bulk

    Directory of Open Access Journals (Sweden)

    Škrinjar Marija M.


    Full Text Available d.o.o., Novi Sad AU Krunić Vesna J. AF EKOLd.o.o., Novi Sad KW teas % mould contamination % thermal treatment KR nema Other the water, tea is the most popular beverage in the world today. They are used for ages, in the beginning as refreshing drinks, and later more for their healing properties. Teas have been demonstrated to show antioxidative, anti-carcinogenic, and anti-microbial properties. Considering that the teas, during the production, are not treated with any temperature, there is high risk for contamination with different type of microorganisms, especially with moulds. Moulds are ubiquitously distributed in nature and their spores can be found in the atmosphere even at high altitudes and under favorable conditions of temperature and humidity, moulds grow on many commodities including cereals, oil seeds, nuts, herbs and spices. Most of them are potential producers of mycotoxins which present a real hazard to human health. The aim of this work was to investigate total mould count and to identify moulds isolated from teas in bulk, than from teas treated with hot, sterile, distilled water and from the tea filtrates. Tested teas were peppermint, sage, yarrow, black tea, bearberry, lemon balm, mixture of teas from Zlatibor. In teas in balk was observed high contamination with different kinds of moulds (1.84-4.55 cfu/g, such as Aspergillus awamori, A. lovaniensis, A niger, A. phoenicus, A. repens, A. restrictus, A. sydowii, A. versicolor, Eurotium amstelodami, E. chevalieri, E. herbariorum, Penicillium chrysogenum, and Scopulariopsis brevicaulis. The most frequent were species from Aspergillus and Eurotium genera. Thermal treatment with hot, sterile, distilled water reduced the number of fungal colonies. Aspergillus awamori was the most resistant and appeared in six samples of filtrates of tea, Aspergillus niger in one sample and Penicillium chrysogenum in one sample.

  5. Silicon bulk micromachined hybrid dimensional artifact.

    Energy Technology Data Exchange (ETDEWEB)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David


    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  6. Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants (United States)

    Iwinska, M.; Piotrzkowski, R.; Litwin-Staszewska, E.; Ivanov, V. Yu.; Teisseyre, H.; Amilusik, M.; Lucznik, B.; Fijalkowski, M.; Sochacki, T.; Takekawa, N.; Murakami, H.; Bockowski, M.


    Gallium nitride crystals were grown by hydride vapor phase epitaxy using solid iron as a source of dopants. Three crystal growth processes were performed at constant HCl flow over the solid iron and with different gallium chloride flows. High structural quality ammonothermal GaN was used as seed material. No yellow luminescence and only weak near band edge luminescence were visible in all grown crystals. A sharp peak was observed at 1.298 eV. This was shown before as an intrinsic transition of Fe impurity in GaN. The grown crystals were highly resistive at room temperature. High-temperature Hall effect measurements revealed n-type conductivity with activation energy equal to 1.8 eV. Secondary ion mass spectrometry indicated the presence of manganese in all three samples. The concentration of manganese was always higher than concentration of iron in the doped GaN.

  7. Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Nagabhushan, B.; Banerji, P., E-mail: [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Kundu, Souvik [School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, Oregon 97331-5501 (United States); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)


    Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine the band offsets in a heterojunction made of InP quantum dots on Si. The valence and conduction band offset was found to be 0.12 eV and 0.35 eV, respectively, with a type-II band lineup. Deviation from theoretical prediction and previously published reports on quasi similar systems have been found and analyzed on the basis of the effect of strain, surface energy, shift in the electrostatic dipole and charge transfer at the interface. The carrier transport mechanisms along with different device parameters in the heterojunction have been studied for a temperature range of 180–300 K. This heterojunction is found to behave as an efficient infrared photodetector with an ON/OFF ratio of 21 at a reverse bias of 2 V. The corresponding rise and decay time was found to be 132 ms and 147 ms, respectively.

  8. Spectral and carrier transfer characteristics of 1.55 -μ m InAs /InP coupled-quantum-dot lasers (United States)

    Lin, Zhiyuan; Wang, Zhuoran; Yuan, Guohui


    To explore the spectral and carrier transfer characteristics of 1.55 -μ m InAs /InP coupled-quantum-dot lasers (CQDLs), we develop a probabilistically coupled multipopulation rate equation model (PCMPREM) involving intradot and interdot relaxation, inhomogeneous broadening, and homogeneous broadening. After solving the PCMPREM with the fourth-order Runge-Kutta method, a simultaneous quadruple lasing spectrum is observed and explained by both the carrier competition theory and coupled theory. An analysis of the results shows that the coupling strength between different subbands changes with different current injections, giving a systematic understanding of the operation of CQDLs systems. With a lower threshold, the CQDL has a much broader output range of more than 105.3 nm around 1.55 μ m , which is 7.8 times greater than the uncoupled QDL, indicating that CQDLs can be excellent light sources for not only long-haul ultrahigh capacity optical communications, but also on-chip photonics integrated circuits with low power consumption.

  9. Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes (United States)

    Jang, Ilwan; Kim, Jiwan; Park, Chang Jun; Ippen, Christian; Greco, Tonino; Oh, Min Suk; Lee, Jeongno; Kim, Won Keun; Wedel, Armin; Han, Chul Jong; Park, Sung Kyu


    The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200°C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature. [Figure not available: see fulltext.

  10. Investigation of Material Gain of In0.90Ga0.10As0.59P0.41/InP Lasing Nano-Heregostructure (United States)

    Yadav, Rashmi; Lal, Pyare; Rahman, F.; Dalela, S.; Alvi, P. A.


    In this paper, we have proposed a step separate confinement heterostructure (SCH) based lasing nano-heterostructure In0.90Ga0.10As0.59P0.41/InP consisting of single quantum well (SQW) and investigated material gain theoretically within TE and TM polarization modes. In addition, the quasi Fermi levels in the conduction and valence bands along with other lasing characteristics like anti-guiding factor, refractive index change with carrier density and differential gain have also been investigated and reported. Moreover, the behavior of quasi Fermi levels in respective bands has also been correlated with the material gain. Strain dependent study on material gain and refractive index change has also been reported. Interestingly, strain has been reported to play a very important role in shifting the lasing wavelength of TE mode to TM mode. The results investigated in the work suggest that the proposed unstrained nano-heterostructure is very suitable as a source for optical fiber based communication systems due to its lasing wavelengths achieved at 1.35 μm within TM mode, while 1.40 μm within TE mode.

  11. Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs MQW`s on InP

    Energy Technology Data Exchange (ETDEWEB)

    Jones, E.D.; Tigges, C.P. [Sandia National Labs., Albuquerque, NM (United States); Kotera, N. [Kyushu Inst. of Tech., Iizuka, Fukuoka (Japan); Mishima, T.; Nakamura, H. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Miura, N. [Univ. of Tokyo (Japan). Inst. for Solid State Physics


    A knowledge of the energy-band energies and masses are important parameters for the design of semiconductor lasers and light-emitting diodes. The authors present results of a magnetoluminescence study on n-type (N{sub 2D} {approximately} 1 {times} 10{sup 12} cm{sup {minus}2}) InGaAs/InAlAs multiple quantum wells lattice matched to InP. From an analysis of low-temperature magnetoluminescence data, a simultaneous measurement of the inplane conduction and valence-band masses is made. They find, assuming parabolic bands, that the conduction and valence-band masses are respectively m{sub c} {approx} 0.069m{sub 0} and m{sub v} {approx} 0.061m{sub 0}, where m{sub 0} is the free electron mass. Fitting a nonparabolic conduction-band dispersion curve to the data yields a zone-center mass m{sub c} {approx} 0.056m{sub 0} and m{sub v} {approximately} 0.102m{sub 0}.

  12. Epitaxial grown InP quantum dots on a GaAs buffer realized on GaP/Si(001) templates

    Energy Technology Data Exchange (ETDEWEB)

    Hartwig, Walter; Wiesner, Michael; Koroknay, Elisabeth; Paul, Matthias; Jetter, Michael; Michler, Peter [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen und Research Center SCoPE, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)


    The increasing necessity of higher computational capacity and security in the information technology requires originally technical solutions, which today's standard microelectronics, as their technical limits are close, can't provide anymore. One way out offers the integration of III-V semiconductor photonics with low-dimensional structures in current CMOS technology, enabling on-chip quantum optical applications, like quantum cryptography or quantum computing. Challenges in the heteroepitaxy of III-V semiconductors and silicon are the mismatches in material properties of the both systems. Defects, like dislocations and anti-phase domains (APDs), inhibit the monolithic integration of III-V semiconductor on Si. We present the growth of a thin GaAs buffer on CMOS-compatible oriented Si(001) by metal-organic vapor-phase epitaxy. To circumvent the forming APDs in the GaAs buffer a GaP on Si template (provided by NAsP{sub III/V} GmbH) was used. The dislocation density was then reduced by integrating several layers of InAs quantum dots in the GaAs buffer to bend the threading misfit dislocations. On top of this structure we grew InP quantum dots embedded in a Al{sub x}Ga{sub 1-x}InP composition and investigated the photoluminescence properties.

  13. Pressure-induced interband optical transitions in an InAs0.8P0.2/InP quantum wire (United States)

    Saravanan, S.; Peter, A. John; Lee, Chang Woo


    Hydrostatic pressure-induced exciton binding energy in an InAs0.8P0.2/InP quantum well wire is investigated taking into account the geometrical confinement effect. Numerical calculations are carried out using variational approach within the single-band effective-mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is found with the consideration of spatial confinement effect in the influence of pressure. The second-order susceptibility of harmonic generation is carried out using the compact density method. The optical gain as a function of incident photon energy is computed in the presence of the hydrostatic pressure. The result shows that the range of wavelength for the potential applications of telecommunications (1.3-1.55 μm) can be obtained by the application of the hydrostatic pressure. We believe that the obtained results can be applied for tuning the ranges of fibre optical wavelength in telecommunications.

  14. 30 CFR 56.6802 - Bulk delivery vehicles. (United States)


    ... Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Explosives Maintenance § 56.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a bulk delivery vehicle...

  15. 77 FR 12293 - PCBs Bulk Product v. Remediation Waste (United States)


    ... Docket, EPA/DC, EPA West, Room 3334, 1301 Constitution Ave. NW., Washington, DC 20460. The Public Reading... telephone number for the Public Reading Room is (202) 566-1744, and the telephone number for the RCRA Docket... defined as PCB bulk product waste in 40 CFR 761.3. The definition of PCB bulk product waste includes ``non...

  16. Bulk metallic glasses: A new class of engineering materials

    Indian Academy of Sciences (India)

    A number of processes is available to synthesise bulk metallic glasses. The crystallisation behaviour and mechanical properties of these alloys pose interesting scientific questions. Upon crystallisation many of these glasses transform to bulk nanocrystals and nanoquasicrystals. A detailed study of the structure and the ...

  17. Simulation-integrated Design of Dry Bulk Terminals

    NARCIS (Netherlands)

    Van Vianen, T.A.


    To meet the expected increase of seaborne trade flows for coal and iron ore dry bulk terminals need to be designed or expanded. A comprehensive design method for dry bulk terminals is missing. Designs are currently based on rules-of-thumb, practical experiences and average values for specific design

  18. Influence of bulk dielectric polarization upon PD transients

    DEFF Research Database (Denmark)

    Pedersen, Aage; Crichton, George C; McAllister, Iain Wilson


    associated with the actual space charge in the void, and one related to changes in the bulk polarization brought about by changes in the field external to the void due to this space charge. The magnitude of the induced charge and its components are discussed in relation to a heterogeneous bulk dielectric...

  19. A new approximate sum rule for bulk alloy properties (United States)

    Bozzolo, Guillermo; Ferrante, John


    A new, approximate sum rule is introduced for determining bulk properties of multicomponent systems, in terms of the pure components properties. This expression is applied for the study of lattice parameters, cohesive energies, and bulk moduli of binary alloys. The correct experimental trends (i.e., departure from average values) are predicted in all cases.

  20. Bianchi Type-I bulk viscous fluid string dust magnetized ...

    Indian Academy of Sciences (India)

    Bianchi Type-I magnetized bulk viscous fluid string dust cosmological model is investigated. To get a determinate model, we have assumed the conditions and = constant where is the shear, the expansion in the model and the coefficient of bulk viscosity. The behaviour of the model in the presence and ...

  1. Advanced and new developments in bulk metal forming

    DEFF Research Database (Denmark)

    Bay, Niels; Wanheim, Tarras; Ravn, Bjarne Gottlieb


    Increasing demands to manufacturing industry of faster, better and cheaper production has intensified the research and development of bulk metal forming. The present paper gives examples on European industrial research on secondary bulk metal forming processes. The R&D follows three lines...

  2. Bulk viscosity of accretion disks around non rotating black holes (United States)

    Moeen Moghaddas, M.


    In this paper, we study the Keplerian, relativistic accretion disks around the non rotating black holes with the bulk viscosity. Many of authors studied the relativistic accretion disks around the black holes, but they ignored the bulk viscosity. We introduce a simple method to calculate the bulk in these disks. We use the simple form for the radial component of the four velocity in the Schwarzschild metric, then the other components of the four velocity and the components of the shear and the bulk tensor are calculated. Also all components of the bulk viscosity, the shear viscosity and stress tensor are calculated. It is seen that some components of the bulk tensor are comparable with the shear tensor. We calculate some of the thermodynamic quantities of the relativistic disks. Comparison of thermodynamic quantities shows that in some states influences of the bulk viscosity are important, especially in the inner radiuses. All calculations are done analytically and we do not use the boundary conditions. Finally, we find that in the relativistic disks around the black holes, the bulk viscosity is non-negligible in all the states.

  3. Role of bulking agents in bladder exstrophyepispadias complexes ...

    African Journals Online (AJOL)

    Three out of five girls had improved bladder prolapse. There was no Complication, infection or migration of bulking agents. Patients had increased in soft tissue according to MRI. Conclusion: Using bulking agents is a good alternative to sling pelvic floor not only cosmetically but also for ease of patients and operation.

  4. Effect of Bulk and Interfacial Rheological Properties on Bubble Dissolution

    NARCIS (Netherlands)

    Kloek, W.; Vliet, van T.; Meinders, M.


    This paper describes theoretical calculations of the combined effect of bulk and interracial rheological properties on dissolution behavior of a bubble in an infinite medium at saturated conditions. Either bulk or interracial elasticity can stop the bubble dissolution process, and stability criteria

  5. Modelling and Forecasting in the Dry Bulk Shipping Market

    NARCIS (Netherlands)

    Chen, S.


    This dissertation proposes strategies not only for modelling price behavior in the dry bulk market, but also for modelling relationships between economic and technical variables of dry bulk ships, by using modern time series approaches, Monte Carlo simulation and other economic techniques. The time

  6. Bulk modulus of metals according to structureless pseudopotential ...

    African Journals Online (AJOL)

    structureless pseudopotential model was fully developed. The developed method was used to calculate the bulk modulus and kinetic energy contribution to the bulk modulus of 46 elemental metals. The results obtained were compared with experimental values and their variation with electron density parameter was studied ...

  7. Nucleation of bulk superconductivity close to critical magnetic fields

    DEFF Research Database (Denmark)

    Fournais, Søren; Kachmar, Ayman


    threshold value of the applied magnetic field for which bulk superconductivity contributes to the leading order of the energy. Furthermore, the energy of the bulk is related to that of the Abrikosov problem in a periodic lattice. A key ingredient of the proof is a novel L∞ -bound which is of independent...

  8. 27 CFR 24.301 - Bulk still wine record. (United States)


    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk still wine record. 24..., DEPARTMENT OF THE TREASURY LIQUORS WINE Records and Reports § 24.301 Bulk still wine record. A proprietor who produces or receives still wine in bond, (including wine intended for use as distilling material or vinegar...

  9. Bulk forming of industrial micro components in conventional metals and bulk metallic glasses

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Paldan, Nikolas Aulin; Eriksen, Rasmus Solmer


    For production of micro components in large numbers, forging is an interesting and challenging process. The conventional metals like silver, steel and aluminum often require multi-step processes, but high productivity and increased strength justify the investment. As an alternative, bulk metallic...... glasses will at elevated temperatures behave like a highly viscous liquid, which can easily form even complicated geometries in 1 step. The strengths and limitations of forming the 2 materials are analyzed for a micro 3D component in a silver alloy and an Mg-Cu-Y BMG. ©2007 American Institute of Physics...

  10. Bulk viscosity, interaction and the viability of phantom solutions

    CERN Document Server

    Leyva, Yoelsy


    We study the dynamics of a bulk viscosity model in the Eckart approach for a spatially flat Friedmann-Robertson-Walker (FRW) universe. We have included radiation and dark energy, assumed as perfect fluids, and dark matter treated as an imperfect fluid having bulk viscosity. We also introduce an interaction term between the dark matter and dark energy components. Considering that the bulk viscosity is proportional to the dark matter energy density and imposing a complete cosmological dynamics, we find bounds on the bulk viscosity in order to reproduce a matter-dominated era (MDE). This constraint is independent of the interaction term. Some late time phantom solutions are mathematically possible. However, the constraint imposed by a MDE restricts the interaction parameter, in the phantom solutions, to a region consistent with a null value, eliminating the possibility of late time stable solutions with $w<-1$. From the different cases that we study, the only possible scenario, with bulk viscosity and interac...

  11. Carbon nanotubes grown on bulk materials and methods for fabrication (United States)

    Menchhofer, Paul A [Clinton, TN; Montgomery, Frederick C [Oak Ridge, TN; Baker, Frederick S [Oak Ridge, TN


    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  12. Bulk viscosity of spin-one color superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sa' d, Basil A.


    The bulk viscosity of several quark matter phases is calculated. It is found that the effect of color superconductivity is not trivial, it may suppress, or enhance the bulk viscosity depending on the critical temperature and the temperature at which the bulk viscosity is calculated. Also, is it found that the effect of neutrino-emitting Urca processes cannot be neglected in the consideration of the bulk viscosity of strange quark matter. The results for the bulk viscosity of strange quark matter are used to calculate the r-mode instability window of quark stars with several possible phases. It is shown that each possible phase has a different structure for the r-mode instability window. (orig.)

  13. Photoreflectance Characterization of Semiconductors (United States)

    Bhimnathwala, Hemant Ghanshyamdas

    Photoreflectance technique has been used as a non-destructive probe of surface photo-voltage in doped and semi-insulating semiconductors. A system used to measure the photoreflectance spectra near the fundamental gap of GaAs and InP has been described. Measurements as a function of pump intensity on n and p type GaAs were used to infer the carrier dynamics leading to change in the surface electric field. Measurements indicate that the surface of GaAs consists of hole traps at the surface in addition to recombination states. This is confirmed by spectroscopic studies carried out by varying the pump modulation frequency at fixed temperatures and the measurements show that the hole trap has an activation energy of 0.29 eV and has an emission time of 0.175 +/- 0.002 msec. at room temperature. In semi-insulating GaAs, it is expected that there is no surface electric field at equilibrium due to pinning at the surface and large concentration of deep defect EL2. Electromodulation, in this case proceeds via preferential trapping of holes at the surface. This is supported by measurements carried out as a function of pump intensity and on wafers having different carbon concentrations. Analysis of carrier dynamics in semi-insulating GaAs is much simplified by use of Nd:YAG laser (instead of a HeNe laser) as a source of pump beam. A sub-band -gap excitation generates mainly excess electrons and the Poisson's equation can be integrated once to find the surface electric field. Numerical integration yields the surface photovoltage. It is shown that this technique is sensitive to the the surface state density and relatively insensitive to bulk properties. It has been applied to study the effect of various chemical reactants on the surface state density. In many PR spectra, features at energies less than the gap energy are observed. These are ascribed to shallow acceptors unrelated to carbon, which was the dominant acceptor in these materials. It is proposed that the electric field

  14. Stability of bulk metallic glass structure

    Energy Technology Data Exchange (ETDEWEB)

    Jain, H.; Williams, D.B.


    The fundamental origins of the stability of the (Pd-Ni){sub 80}P{sub 20} bulk metallic glasses (BMGs), a prototype for a whole class of BMG formers, were explored. While much of the properties of their BMGs have been characterized, their glass-stability have not been explained in terms of the atomic and electronic structure. The local structure around all three constituent atoms was obtained, in a complementary way, using extended X-ray absorption fine structure (EXAFS), to probe the nearest neighbor environment of the metals, and extended energy loss fine structure (EXELFS), to investigate the environment around P. The occupied electronic structure was investigated using X-ray photoelectron spectroscopy (XPS). The (Pd-Ni){sub 80}P{sub 20} BMGs receive their stability from cumulative, and interrelated, effects of both atomic and electronic origin. The stability of the (Pd-Ni){sub 80}P{sub 20} BMGs can be explained in terms of the stability of Pd{sub 60}Ni{sub 20}P{sub 20} and Pd{sub 30}Ni{sub 50}P{sub 20}, glasses at the end of BMG formation. The atomic structure in these alloys is very similar to those of the binary phosphide crystals near x=0 and x=80, which are trigonal prisms of Pd or Ni atoms surrounding P atoms. Such structures are known to exist in dense, randomly-packed systems. The structure of the best glass former in this series, Pd{sub 40}Ni{sub 40}P{sub 20} is further described by a weighted average of those of Pd{sub 30}Ni{sub 50}P{sub 20} and Pd{sub 60}Ni{sub 20}P{sub 20}. Bonding states present only in the ternary alloys were found and point to a further stabilization of the system through a negative heat of mixing between Pd and Ni atoms. The Nagel and Tauc criterion, correlating a decrease in the density of states at the Fermi level with an increase in the glass stability, was consistent with greater stability of the Pd{sub x}Ni{sub (80-x)}P{sub 20} glasses with respect to the binary alloys of P. A valence electron concentration of 1.8 e/a, which

  15. 78 FR 72841 - List of Bulk Drug Substances That May Be Used in Pharmacy Compounding; Bulk Drug Substances That... (United States)


    ... Used in Pharmacy Compounding; Bulk Drug Substances That May Be Used To Compound Drug Products in... Administration (FDA or Agency) is withdrawing the proposed rule to list bulk drug substances used in pharmacy... Pharmacopoeia chapter on pharmacy compounding; (II) if such a monograph does not exist, are drug substances that...

  16. Application of the penetration theory for gas - Liquid mass transfer without liquid bulk : Differences with system with a bulk

    NARCIS (Netherlands)

    van Elk, E. P.; Knaap, M. C.; Versteeg, G. F.


    Frequently applied micro models for gas-liquid mass transfer all assume the presence of a liquid bulk. However, some systems are characterized by the absence of a liquid bulk, a very thin layer of liquid flows over a solid surface. An example of such a process is absorption in a column equipped with

  17. Bulk-mediated surface transport in the presence of bias (United States)

    Berezhkovskii, Alexander M.; Dagdug, Leonardo; Bezrukov, Sergey M.


    Surface transport, when the particle is allowed to leave the surface, travel in the bulk for some time, and then return to the surface, is referred to as bulk-mediated surface transport. Recently, we proposed a formalism that significantly simplifies analysis of bulk-mediated surface diffusion [A. M. Berezhkovskii, L. Dagdug, and S. M. Bezrukov, J. Chem. Phys. 143, 084103 (2015)]. Here this formalism is extended to bulk-mediated surface transport in the presence of bias, i.e., when the particle has arbitrary drift velocities on the surface and in the bulk. A key advantage of our approach is that the transport problem reduces to that of a two-state problem of the particle transitions between the surface and the bulk. The latter can be solved with relative ease. The formalism is used to find the Laplace transforms of the first two moments of the particle displacement over the surface in time t at arbitrary values of the particle drift velocities and diffusivities on the surface and in the bulk. This allows us to analyze in detail the time dependence of the effective drift velocity of the particle on the surface, which can be highly nontrivial.

  18. Engineering Nanostructural Routes for Enhancing Thermoelectric Performance: Bulk to Nanoscale. (United States)

    Mohanraman, Rajeshkumar; Lan, Tian-Wey; Hsiung, Te-Chih; Amada, Dedi; Lee, Ping-Chung; Ou, Min-Nan; Chen, Yang-Yuan


    Thermoelectricity is a very important phenomenon, especially its significance in heat-electricity conversion. If thermoelectric devices can be effectively applied to the recovery of the renewable energies, such as waste heat and solar energy, the energy shortage, and global warming issues may be greatly relieved. This review focusses recent developments on the thermoelectric performance of a low-dimensional material, bulk nanostructured materials, conventional bulk materials etc. Particular emphasis is given on, how the nanostructure in nanostructured composites, confinement effects in one-dimensional nanowires and doping effects in conventional bulk composites plays an important role in ZT enhancement.

  19. Eco Issues in Bulk Materials Handling Technologies in Ports

    Directory of Open Access Journals (Sweden)

    Nenad Zrnić


    Full Text Available This paper deals with eco issues in bulk materials handling in ports. Solid, free-flowing materials are said to be in bulk. Bulk materials handling is very difficult, because it incorporates all the features of liquids, gasses and mass solids. Energy efficiency, dust emissions in nearby environment, dust explosions, jamming, noise, handling of hazardous materials and protection of materials from contamination are issues that will be considered in this paper. Here are also presented possible solutions for some of these issues

  20. Tunable bulk polaritons of graphene-based hyperbolic metamaterials. (United States)

    Zhang, Liwei; Zhang, Zhengren; Kang, Chaoyang; Cheng, Bei; Chen, Liang; Yang, Xuefeng; Wang, Jian; Li, Weibing; Wang, Baoji


    The tunable hyperbolic metamaterial (HMM) based on the graphene-dielectric layered structure at THz frequency is presented, and the surface and bulk polaritons of the graphene-based HMM are theoretically studied. It is found that the dispersions of the polaritons can be tuned by varying the Fermi energy of graphene sheets, the graphene-dielectric layers and the layer number of graphene sheets. In addition, the highly confined bulk polariton mode can be excited and is manifested in an attenuated total reflection configuration as a sharp drop in the reflectance. Such properties can be used in tunable optical reflection modulation with the assistance of bulk polaritons.

  1. Impacto de perfis de rádio ocultação GNSS na qualidade das Previsões de tempo do CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Luiz Fernando Sapucci


    Full Text Available Estudos sobre a sensibilidade dos modelos de previsão numérica de tempo a erros nas condições iniciais têm evidenciado a contribuição da assimilação de dados na melhoria do desempenho dos mesmos em descrever o estado futuro da atmosfera. Entre outras fontes de dados, a assimilação de perfis atmosféricos obtidos por rádio ocultação Global Navigation Satellite System (GNSS tem-se destacado como uma ferramenta adicional na redução das deficiências do sistema de coleta de dados meteorológicos. Com o intuito de explorar os benefícios dessa fonte adicional de dados na previsão numérica de tempo gerada pelo modelo de circulação geral atmosférico do CPTEC/INPE, foram realizados experimentos assimilando perfis atmosféricos de altura geopotencial e umidade obtidos por rádio ocultação GNSS, utilizando dados da constelação Constellation Observing System for Meteorology Ionosphere & Climate (COSMIC, para os meses de janeiro e julho de 2009. Os resultados mostraram que o impacto é significativamente positivo durante o verão em todas as variáveis de estado, com ganhos expressivos na extensão das previsões válidas (coeficiente de correlação de anomalia acima de 60%, os quais foram em alguns casos superiores a 48 horas. Esse impacto foi ainda maior sobre a América do Sul com resultados positivos mesmo durante o inverno.

  2. Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n-type InP

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, V. Rajagopal; Reddy, D. Subba; Naik, S. Sankar [Department of Physics, Sri Venkateswara University, Tirupati (India); Choi, C.J. [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju (Korea, Republic of)


    We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n-type InP as a function of annealing temperature using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES), and X-ray diffraction (XRD) measurements. Measurements showed that barrier height of as-deposited Pt/Ti Schottky contact is 0.62 eV (I-V) and 0.76 eV (C-V). Experimental results indicate that high-quality Schottky contact with barrier height and ideality factor of 0.66 eV (I-V), 0.80 eV (C-V), and 1.14 can be achieved after annealing at 400 C for 1 min in N{sub 2} atmosphere. Further, it is observed that the barrier height slightly decreases to 0.55 eV (I-V) and 0.71 eV (C-V) after annealing at 500 C. Norde method is also employed to calculate the barrier height of Pt/Ti Schottky contacts. The obtained values are in good agreement with those obtained by I-V measurements. These results indicate that the optimum annealing temperature for the Pt/Ti Schottky contact is 400 C. According to AES and XRD analysis, the formation of indium phases at the Pt/Ti/n-InP interface could be the reason for the increase of Schottky barrier height (SBH) after annealing at 400 C. Results also showed the formation of phosphide phases at the interface. This may be the reason for the decrease in the barrier height after annealing at 500 C. The AFM results showed that the overall surface morphology of Pt/Ti Schottky contact is reasonably smooth. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Advanced Manufacturing Technologies (AMT): Bulk Metallic Glass Element (United States)

    National Aeronautics and Space Administration — The first major objective of the ‘Bulk Metallic Glasses (BMGs) for Space Applications’ project is to raise the technology readiness level dry lubricated,...

  4. Nondestructive Method for Bulk Chemical Characterization of Barred Olivine Chondrules (United States)

    Montoya-Perez, M. A.; Cervantes-de la Cruz, K. E.; Ruvalcaba-Sil, J. L.


    This work develops a bulk chemical characterization of barred olivine chondrules based on the XRF analysis using a portable equipment at the National Research and Conservation Science Laboratory of Cultural Heritage (LANCIC-IF) in Mexico City.

  5. Lazy Evaluation for Concurrent OLTP and Bulk Transactions

    NARCIS (Netherlands)

    Wevers, L.; Huisman, Marieke; van Keulen, Maurice


    Existing concurrency control systems cannot execute transactions with overlapping updates concurrently. This is especially problematic for bulk updates, which usually overlap with all concurrent transactions. To solve this, we have developed a concurrency control mechanism based on lazy evaluation,

  6. Surface Premelting Coupled with Bulk Phase Transitions in Colloidal Crystals (United States)

    Li, Bo; Wang, Feng; Zhou, Di; Cao, Xin; Peng, Yi; Ni, Ran; Liao, Maijia; Han, Yilong


    Colloids have been used as outstanding model systems for the studies of various phase transitions in bulk, but not at interface yet. Here we obtained equilibrium crystal-vapor interfaces using tunable attractive colloidal spheres and studied the surface premelting at the single-particle level by video microscopy. We found that monolayer crystals exhibit a bulk isostructural solid-solid transition which triggers the surface premelting. The premelting is incomplete due to the interruption of a mechanical-instability-induced bulk melting. By contrast, two- or multilayer crystals do not have the solid-solid transition and the mechanical instability, hence they exhibit complete premelting with divergent surface-liquid thickness. These novel interplays between bulk and surface phase transitions cast new lights for both types of transitions.

  7. Efficiency of bulk-heterojunction organic solar cells (United States)

    Scharber, M.C.; Sariciftci, N.S.


    During the last years the performance of bulk heterojunction solar cells has been improved significantly. For a large-scale application of this technology further improvements are required. This article reviews the basic working principles and the state of the art device design of bulk heterojunction solar cells. The importance of high power conversion efficiencies for the commercial exploitation is outlined and different efficiency models for bulk heterojunction solar cells are discussed. Assuming state of the art materials and device architectures several models predict power conversion efficiencies in the range of 10–15%. A more general approach assuming device operation close to the Shockley–Queisser-limit leads to even higher efficiencies. Bulk heterojunction devices exhibiting only radiative recombination of charge carriers could be as efficient as ideal inorganic photovoltaic devices. PMID:24302787

  8. Role of the antiferromagnetic bulk spins in exchange bias

    Energy Technology Data Exchange (ETDEWEB)

    Schuller, Ivan K. [Center for Advanced Nanoscience and Physics Department, University of California San Diego, La Jolla, CA 92093 (United States); Morales, Rafael, E-mail: [Department of Chemical-Physics & BCMaterials, University of the Basque Country UPV/EHU (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Batlle, Xavier [Departament Física Fonamental and Institut de Nanociència i Nanotecnologia, Universitat de Barcelona, c/ Martí i Franqués s/n, 08028 Barcelona, Catalonia (Spain); Nowak, Ulrich [Department of Physics, University of Konstanz, 78464 Konstanz (Germany); Güntherodt, Gernot [Physics Institute (IIA), RWTH Aachen University, Campus RWTH-Melaten, 52074 Aachen (Germany)


    This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

  9. Vacuum Brane and the Bulk Dynamics in Dilatonic Brane World


    Ochiai, H; Sato, K.


    We investigate the dynamics of vacuum brane and the bulk in dilatonic brane world. We present exact dynamical solutions which describe the vacuum dilatonic brane world. We find that the solution has initial singularity and singularity at spatial infinity.

  10. Bulk metallic glass for low noise fluxgate Project (United States)

    National Aeronautics and Space Administration — The team of Prime Photonics, Virginia Tech, and Utron Kinetics propose to demonstrate a method for fabrication of a bulk, amorphous, cobalt-rich material that...

  11. Electrical, optical, and analytical characterization of bulk hydrothermal ZnO crystals doped with indium (United States)

    Witkowska-Baran, M.; Mycielski, A.; Kochanowska, D.; Witkowska, B.; Kaliszek, W.; JakieŁa, R.; łusakowska, E.; Domukhovski, V.; Weģrzycki, M.


    The communication describes our research on a technique of making electrical contacts to semi-insulating (Cd,Mn)Te crystals for radiation detector applications. Since the electrical contacts made by deposition of Au directly onto the (Cd,Mn)Te surface turned out to be unreproducible, and the contacts made by deposition of monocrystalline layers of heavily doped semiconductors were unpractical for applications, our investigations were focused on the amorphous contact layers. The amorphous layers of heavily doped ZnTe:Sb or CdTe:In were evaporated on the "epi-ready" surfaces of good-quality, high-resistivity (108-1010 Ω cm) single crystals of (Cd,Mn)Te. The evaporation was carried out in the medium-high vacuum of about 10 -7 Torr. For electrical connections the amorphous contact layers were covered by an evaporated Au top layer. We investigated, the effect of thickness of the amorphous layer on the functioning of the contact. At the moment 1 μm thickness seems to be satisfactory.

  12. Compositional ordering and stability in nanostructured, bulk thermoelectric alloys.

    Energy Technology Data Exchange (ETDEWEB)

    Hekmaty, Michelle A.; Faleev, S.; Medlin, Douglas L.; Leonard, F.; Lensch-Falk, J.; Sharma, Peter Anand; Sugar, J. D.


    Thermoelectric materials have many applications in the conversion of thermal energy to electrical power and in solid-state cooling. One route to improving thermoelectric energy conversion efficiency in bulk material is to embed nanoscale inclusions. This report summarize key results from a recently completed LDRD project exploring the science underpinning the formation and stability of nanostructures in bulk thermoelectric and the quantitative relationships between such structures and thermoelectric properties.

  13. On a bulk queueing system with impatient customers

    Directory of Open Access Journals (Sweden)

    Tadj Lotfi


    Full Text Available We consider a bulk arrival, bulk service queueing system. Customers are served in batches of r units if the queue length is not less than r . Otherwise, the server delays the service until the number of units in the queue reaches or exceeds level r . We assume that unserved customers may get impatient and leave the system. An ergodicity condition and steady-state probabilities are derived. Various system characteristics are also computed.

  14. On a bulk queueing system with impatient customers

    Directory of Open Access Journals (Sweden)

    Lotfi Tadj


    Full Text Available We consider a bulk arrival, bulk service queueing system. Customers are served in batches of r units if the queue length is not less than r. Otherwise, the server delays the service until the number of units in the queue reaches or exceeds level r. We assume that unserved customers may get impatient and leave the system. An ergodicity condition and steady-state probabilities are derived. Various system characteristics are also computed.

  15. Levitation Force Properties of Superconducting Magnetic Bearing Using Bulk Magnet


    齋藤, 友基; 荻原, 宏康


    Type II superconductors can be trapped fluxes at pinning centers. The fluxes-trapping superconductor behaves like a permanent magnet, which is called a "bulk magnet". It is reported that its magnetic field is stronger than that of a usual permanent magnet. We propose a novel levitation system using two sets of superconductors, one of which used the bulk magnets. In this paper, we compared the levitation forces of a usual levitation system with a permanent magnet and the novel levitation syste...

  16. Concentration polarization, surface currents, and bulk advection in a microchannel

    DEFF Research Database (Denmark)

    Nielsen, Christoffer Peder; Bruus, Henrik


    . A remarkable outcome of the investigations is the discovery of strong couplings between bulk advection and the surface current; without a surface current, bulk advection is strongly suppressed. The numerical simulations are supplemented by analytical models valid in the long channel limit as well...... as in the limit of negligible surface charge. By including the effects of diffusion and advection in the diffuse part of the electric double layers, we extend a recently published analytical model of overlimiting current due to surface conduction....

  17. Bulk metallic glasses: A new class of engineering materials


    Basu, Joysurya; Ranganathan, S.


    Bulk glass-forming alloys have emerged over the past fifteen years with attractive properties and technological promise. A number of alloy systems based on lanthanum, magnesium, zirconium, palladium, iron, cobalt and nickel have been discovered. Glass-forming ability depends on various factors like enthalpy of mixing, atomic size and multicomponent alloying. A number of processes is available to synthesise bulk metallic glasses. The crystallisation behaviour and mechanical properties of t...

  18. Financial Reporting of DLA-Owned Bulk Petroleum Products (United States)


    FINANCIAL REPORTING OF DLA-OWNED BULK PETROLEUM PRODUCTS Report No. D-2001-126 May 23, 2001 Office of...34DD MON YYYY") Title and Subtitle Financial Reporting of DLA-Owned Bulk Petroleum Products Contract or Grant Number Program Element Number...the Chief Financial Officers Act of 1990, as amended by the Federal Financial Management Act of 1994. This is the fifth in a series of reports on the

  19. Structural and opto-electronic properties of InP1-xBix bismide alloys for MID-infrared optical devices: A DFT + TB-mBJ study (United States)

    Assali, Abdenacer; Bouslama, M.; Chaabane, L.; Mokadem, A.; Saidi, F.


    Using full-potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT), we have studied the structural and opto-electronic properties of zinc blende InP1-xBix bismide alloys (0 ≤ x ≤ 0.5). The bowing lattice parameter exhibits a weak composition dependence on InP1-xBix alloys with b = 0.02834 Å. The band gap decreases with Bi composition by about 1.285 meV for x = 0.25 covering the middle (MID) and far-wavelength infrared region [0.88-10.5 μm]. From DOS, the decrease of band gap can be attributed to the both upper shifts of the valence band VB and the downward shifts of the conduction band CB, due to the resonance interaction of the Bi-p orbitals at the top of the VB and hybridization of the occupied s/p orbitals of In/P/Bi atoms at the bottom of the CB, with increasing Bi composition. The dielectric functions (ε1(ω), ε2(ω)) and optical constants such as n(ω), k(ω), α(ω) and R(ω) for InP1-xBix alloys are determined for radiation up to 8 eV in excellent agreement with the measured data. The energies of the critical-point (CP) are also identified agree well with the experimental data. The InPBi material appears as a promising material to realize novel optical devices as Laser Diodes and detectors operating in the MID-Infrared spectrum region.

  20. Reliability assessment of bulk electric systems containing large wind farms

    Energy Technology Data Exchange (ETDEWEB)

    Wangdee, Wijarn [Regional System Planning, British Columbia Transmission Corporation, Vancouver (Canada); Billinton, Roy [Power System Research Group, University of Saskatchewan, Saskatoon (Canada)


    Wind power is an intermittent energy source that behaves quite differently than conventional energy sources. Bulk electric system reliability analysis associated with wind energy conversion systems (WECS) provides an opportunity to investigate the reliability benefits when large-scale wind power is injected at specified locations in a bulk electric system. Connecting the WECS to different locations in a bulk system can have different impacts on the overall system reliability depending on the system topology and conditions. Connecting a large-scale WECS to an area which has weak transmission could create system operating constraints and provide less system benefit than connecting it to an area with stronger transmission. This paper investigates bulk electric system transmission constraints associated with large-scale wind farms. The analyses presented in this paper can be used to determine the maximum WECS installed capacity that can be injected at specified locations in a bulk electric system, and assist system planners to create potential transmission reinforcement schemes to facilitate large-scale WECS additions to the bulk system. A sequential Monte Carlo simulation approach is used as this methodology can facilitate a time series modeling of wind speeds, and also provides accurate frequency and duration assessments. An auto-regressive moving average (ARMA) time series model is used to simulate hourly wind speeds. (author)

  1. Accidental SUSY: enhanced bulk supersymmetry from brane back-reaction (United States)

    Burgess, C. P.; van Nierop, L.; Parameswaran, S.; Salvio, A.; Williams, M.


    We compute how bulk loops renormalize both bulk and brane effective interactions for codimension-two branes in 6D gauged chiral supergravity, as functions of the brane tension and brane-localized flux. We do so by explicitly integrating out hyper- and gauge-multiplets in 6D gauged chiral supergravity compactified to 4D on a flux-stabilized 2D rugby-ball geometry, specializing the results of a companion paper, arXiv:1210.3753, to the supersymmetric case. While the brane back-reaction generically breaks supersymmetry, we show that the bulk supersymmetry can be preserved if the amount of brane- localized flux is related in a specific BPS-like way to the brane tension, and verify that the loop corrections to the brane curvature vanish in this special case. In these systems it is the brane-bulk couplings that fix the size of the extra dimensions, and we show that in some circumstances the bulk geometry dynamically adjusts to ensure the supersymmetric BPS-like condition is automatically satisfied. We investigate the robustness of this residual supersymmetry to loops of non-supersymmetric matter on the branes, and show that supersymmetry-breaking effects can enter only through effective brane-bulk interactions involving at least two derivatives. We comment on the relevance of this calculation to proposed applications of codimension-two 6D models to solutions of the hierarchy and cosmological constant problems.

  2. Estimating bulk density of compacted grains in storage bins and modifications of Janssen's load equations as affected by bulk density. (United States)

    Haque, Ekramul


    Janssen created a classical theory based on calculus to estimate static vertical and horizontal pressures within beds of bulk corn. Even today, his equations are widely used to calculate static loadings imposed by granular materials stored in bins. Many standards such as American Concrete Institute (ACI) 313, American Society of Agricultural and Biological Engineers EP 433, German DIN 1055, Canadian Farm Building Code (CFBC), European Code (ENV 1991-4), and Australian Code AS 3774 incorporated Janssen's equations as the standards for static load calculations on bins. One of the main drawbacks of Janssen's equations is the assumption that the bulk density of the stored product remains constant throughout the entire bin. While for all practical purposes, this is true for small bins; in modern commercial-size bins, bulk density of grains substantially increases due to compressive and hoop stresses. Over pressure factors are applied to Janssen loadings to satisfy practical situations such as dynamic loads due to bin filling and emptying, but there are limited theoretical methods available that include the effects of increased bulk density on the loadings of grain transmitted to the storage structures. This article develops a mathematical equation relating the specific weight as a function of location and other variables of materials and storage. It was found that the bulk density of stored granular materials increased with the depth according to a mathematical equation relating the two variables, and applying this bulk-density function, Janssen's equations for vertical and horizontal pressures were modified as presented in this article. The validity of this specific weight function was tested by using the principles of mathematics. As expected, calculations of loads based on the modified equations were consistently higher than the Janssen loadings based on noncompacted bulk densities for all grain depths and types accounting for the effects of increased bulk densities

  3. Liquefaction Incidents of Mineral Cargoes on Board Bulk Carriers

    Directory of Open Access Journals (Sweden)

    Michael C. Munro


    Full Text Available Liquefaction is a frequently occurring problem taking place when transporting wet granular solid bulk cargoes on board bulk carriers. Liquefaction of a solid bulk cargo can occur when excessive dynamic loading, induced by rough seas and vessel vibrations, is transmitted to the cargo. From 1988 to 2015, there have been 24 suspected liquefaction incidents reported, which resulted in 164 casualties and the loss of 18 vessels. The objective of this study is to investigate the collective causes of liquefaction of solid bulk cargoes on board bulk carriers in order to make recommendations to prevent future incidents from occurring. This was achieved by analysing the seven available investigative reports relating to the incidents, focusing on the key findings and exploring the effect of excess moisture within the cargo. This study has placed significant emphasis on the importance of preventing ingress of water into the cargo during transportation, loading, and storage. Recommendations have been given, based on the key findings from the reports, to reduce the potential for liquefaction incidents to occur.

  4. Evaluation and remediation of bulk soap dispensers for biofilm. (United States)

    Lorenz, Lindsey A; Ramsay, Bradley D; Goeres, Darla M; Fields, Matthew W; Zapka, Carrie A; Macinga, David R


    Recent studies evaluating bulk soap in public restroom soap dispensers have demonstrated up to 25% of open refillable bulk-soap dispensers were contaminated with ~ 6 log(10)(CFU ml(-1)) heterotrophic bacteria. In this study, plastic counter-mounted, plastic wall-mounted and stainless steel wall-mounted dispensers were analyzed for suspended and biofilm bacteria using total cell and viable plate counts. Independent of dispenser type or construction material, the bulk soap was contaminated with 4-7 log(10)(CFU ml(-1)) bacteria, while 4-6 log(10)(CFU cm(-2)) biofilm bacteria were isolated from the inside surfaces of the dispensers (n = 6). Dispenser remediation studies, including a 10 min soak with 5000 mg l(-1) sodium hypochlorite, were then conducted to determine the efficacy of cleaning and disinfectant procedures against established biofilms. The testing showed that contamination of the bulk soap returned to pre-test levels within 7-14 days. These results demonstrate biofilm is present in contaminated bulk-soap dispensers and remediation studies to clean and sanitize the dispensers are temporary.

  5. Running with rugby balls: bulk renormalization of codimension-2 branes (United States)

    Williams, M.; Burgess, C. P.; van Nierop, L.; Salvio, A.


    We compute how one-loop bulk effects renormalize both bulk and brane effective interactions for geometries sourced by codimension-two branes. We do so by explicitly integrating out spin-zero, -half and -one particles in 6-dimensional Einstein-Maxwell-Scalar theories compactified to 4 dimensions on a flux-stabilized 2D geometry. (Our methods apply equally well for D dimensions compactified to D - 2 dimensions, although our explicit formulae do not capture all divergences when D > 6.) The renormalization of bulk interactions are independent of the boundary conditions assumed at the brane locations, and reproduce standard heat-kernel calculations. Boundary conditions at any particular brane do affect how bulk loops renormalize this brane's effective action, but not the renormalization of other distant branes. Although we explicitly compute our loops using a rugby ball geometry, because we follow only UV effects our results apply more generally to any geometry containing codimension-two sources with conical singularities. Our results have a variety of uses, including calculating the UV sensitivity of one-loop vacuum energy seen by observers localized on the brane. We show how these one-loop effects combine in a surprising way with bulk back-reaction to give the complete low-energy effective cosmological constant, and comment on the relevance of this calculation to proposed applications of codimension-two 6D models to solutions of the hierarchy and cosmological constant problems.

  6. Bulk viscosity, interaction and the viability of phantom solutions

    Energy Technology Data Exchange (ETDEWEB)

    Leyva, Yoelsy; Sepulveda, Mirko [Universidad de Tarapaca, Departamento de Fisica, Facultad de Ciencias, Arica (Chile)


    We study the dynamics of a bulk viscosity model in the Eckart approach for a spatially flat Friedmann-Robertson-Walker (FRW) Universe. We have included radiation and dark energy, assumed as perfect fluids, and dark matter treated as an imperfect fluid having bulk viscosity. We also introduce an interaction term between the dark matter and dark energy components. Considering that the bulk viscosity is proportional to the dark matter energy density and imposing a complete cosmological dynamics, we find bounds on the bulk viscosity in order to reproduce a matter-dominated era (MDE). This constraint is independent of the interaction term. Some late time phantom solutions are mathematically possible. However, the constraint imposed by a MDE restricts the interaction parameter, in the phantom solutions, to a region consistent with a null value, eliminating the possibility of late time stable solutions with w < -1. From the different cases that we study, the only possible scenario, with bulk viscosity and interaction term, belongs to the quintessence region. In the latter case, we find bounds on the interaction parameter compatible with latest observational data. (orig.)

  7. Dark goo: Bulk viscosity as an alternative to dark energy

    CERN Document Server

    Gagnon, Jean-Sebastien


    We present a simple (microscopic) model in which bulk viscosity plays a role in explaining the present acceleration of the universe. The effect of bulk viscosity on the Friedmann equations is to turn the pressure into an "effective" pressure containing the bulk viscosity. For a sufficiently large bulk viscosity, the effective pressure becomes negative and could mimic a dark energy equation of state. Our microscopic model includes self-interacting spin-zero particles (for which the bulk viscosity is known) that are added to the usual energy content of the universe. We study both background equations and linear perturbations in this model. We show that a dark energy behavior is obtained for reasonable values of the two parameters of the model (i.e. the mass and coupling of the spin-zero particles) and that linear perturbations are well-behaved. There is no apparent fine tuning involved. We also discuss the conditions under which hydrodynamics holds, in particular that the spin-zero particles must be in local eq...

  8. Unveiling descriptors for predicting the bulk modulus of amorphous carbon (United States)

    Takahashi, Keisuke; Tanaka, Yuzuru


    Descriptors for the bulk modulus of amorphous carbon are investigated through the implementation of data mining where data sets are prepared using first-principles calculations. Data mining reveals that the number of bonds in each C atom and the density of amorphous carbon are found to be descriptors representing the bulk modulus. Support vector regression (SVR) within machine learning is implemented and descriptors are trained where trained SVR is able to predict the bulk modulus of amorphous carbon. An inverse problem, starting from the bulk modulus towards structural information of amorphous carbon, is performed and structural information of amorphous carbon is successfully predicted from the desired bulk modulus. Thus, treating several physics factors in multidimensional space allows for the prediction of physical phenomena. In addition, the reported approach proposes that "big data" can be generated from a small data set using machine learning if descriptors are well defined. This would greatly change how amorphous carbon would be treated and help accelerate further development of amorphous carbon materials.

  9. Color of bulk-fill composite resin restorative materials. (United States)

    Barutcigil, Çağatay; Barutcigil, Kubilay; Özarslan, Mehmet Mustafa; Dündar, Ayşe; Yilmaz, Burak


    To evaluate the color stability of novel bulk-fill composite resins. Color measurements of a nanohybrid composite resin (Z550) and 3 bulk-fill composite resins (BLK, AFX, XTF; n = 45) were performed before polymerization. After polymerization, color measurements were repeated and specimens were immersed in distilled water or red wine, or coffee. Color change [CIEDE2000 (ΔE00 )] was calculated after 24 h, 1 and 3 weeks. Data were analyzed with Kruskal-Wallis, Mann-Whitney U and Wilcoxon tests (α = 0.05). Color changes observed after polymerization were significant for all groups. Color changes observed in distilled water for Z550 and AFX were significant. Color changes after stored in red wine and coffee were significant for all groups. Bulk-fill composite resin color change increased over time for all groups in red wine and coffee (P composite resin and bulk-fill composite resins. AFX had the highest color change in distilled water. The color of tested bulk-fill composite resins significantly changed after immersion in beverages and over time. Color change observed with the nanohybrid composite resin after 1 week was stable. Clinicians should keep in mind that tested composite resins may change color when exposed to water and significantly change color immediately after they are polymerized. In addition, the color change continues over time should the patient is a coffee and/or red wine consumer. © 2017 Wiley Periodicals, Inc.

  10. Mapping vibrational surface and bulk modes in a single nanocube (United States)

    Lagos, Maureen J.; Trügler, Andreas; Hohenester, Ulrich; Batson, Philip E.


    Imaging of vibrational excitations in and near nanostructures is essential for developing low-loss infrared nanophotonics, controlling heat transport in thermal nanodevices, inventing new thermoelectric materials and understanding nanoscale energy transport. Spatially resolved electron energy loss spectroscopy has previously been used to image plasmonic behaviour in nanostructures in an electron microscope, but hitherto it has not been possible to map vibrational modes directly in a single nanostructure, limiting our understanding of phonon coupling with photons and plasmons. Here we present spatial mapping of optical and acoustic, bulk and surface vibrational modes in magnesium oxide nanocubes using an atom-wide electron beam. We find that the energy and the symmetry of the surface polariton phonon modes depend on the size of the nanocubes, and that they are localized to the surfaces of the nanocube. We also observe a limiting of bulk phonon scattering in the presence of surface phonon modes. Most phonon spectroscopies are selectively sensitive to either surface or bulk excitations; therefore, by demonstrating the excitation of both bulk and surface vibrational modes using a single probe, our work represents advances in the detection and visualization of spatially confined surface and bulk phonons in nanostructures.


    Directory of Open Access Journals (Sweden)

    Vasile BOTNARIUC


    Full Text Available Au fost studiate caracteristicile capacitate-tensiune-conductabilitate-frecvenţă ale homo­joncţi­uni­lor n+-p°-p+InP cu şi fără strat frontal n+CdS obţinute cu aplicarea tehnologiilor din faza gazoasă în sistemul In-PCl3-H2 şi în volum cvasiînchis. S-a stabilit că distribuirea impurităţilor în regiunea sarcinii de baraj în astfel de joncţiuni este cu gradient liniar, iar la frecvenţele de 7…10 MHz impendanţa structurii este determinată de rezistenţa inductivă. Concentraţia stărilor super­ficiale pentru structurile n+-p°-p+InP cu strat frontal de n+CdS este cu un ordin mai mică decât fără acest strat, ceea ce va spori eficienţa CF obţinute în baza lor.CAPACITANCE AND ELECTRICAL CONDUCTIVITY STUDIES OF P-INP JUNCTIONSThe capacitance –voltage-conductivity-frequency dependencies of n+-po-p+InP with and without n+CdS frontal  layer, obtained  by using of gaseous phase epitaxial technology in a In-PCl3-H2 system and deposition in a quasi-closed volume, were studied. It was established that the impurity distribution in the space charge region of such junctions is of a linear gradient, and at the frequencies of 7…10 MHz the structure impedance is determined by the inductance resistance. The surface state concentration in n+-po-p+InP structures with the n+CdS frontal  layer is by an order of magnitude lower than in the same structures without it, which can enhance the efficiency of solar cells based on them.

  12. Cytotoxicity assessment of functionalized CdSe, CdTe and InP quantum dots in two human cancer cell models

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Hu, Rui [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, Jianwei [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Zhang, Butian; Wang, Yucheng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, Xin [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Law, Wing-Cheung [Department of Industrial and System Engineering, The Hang Kong Polytechnic University, Hung Hom (Hong Kong); Liu, Liwei [School of Science, Changchun University of Science and Technology, Changchun 130022 (China); Ye, Ling, E-mail: [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Yong, Ken-Tye, E-mail: [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)


    protocols are urgently needed to be developed and employed for fully assessing and understanding the origins of the toxicity arising from different QD formulations. - Highlights: • The cytotoxicity of CdSe, CdTe and InP based on four QD formulations were assessed. • Gastric adenocarcinoma and neuroblastoma cells showed different toxicity responses. • Multi-factors including core, coating and cell type contribute to QD cytotoxicity. • The cellular uptake of QDs plays an important role in the toxicity impact of QDs.

  13. Directional mechanical response in the bulk of topological metamaterials (United States)

    Zeb Rocklin, D.


    Mechanical metamaterials are those structures designed to convey force and motion in novel and desirable ways. Recently, Kane and Lubensky showed that lattices at the point of marginal mechanical stability (Maxwell lattices) possess a topological invariant that describes the distribution of floppy, zero-energy edge modes. Here, we show that applying force at a point in the bulk of these lattices generates a directional mechanical response, in which stress or strain is induced only on one side of the force. This provides both a bulk metric for mechanical polarization and a design principle to convey stresses and strains towards or away from parts of the structure. We also characterize the effects of removing bonds on the material’s structure and floppy modes, establishing a relationship between edge modes and bulk response.

  14. Preparation of bulk superhard B-C-N nanocomposite compact (United States)

    Zhao, Yusheng [Los Alamos, NM; He, Duanwei [Sichuan, CN


    Bulk, superhard, B--C--N nanocomposite compacts were prepared by ball milling a mixture of graphite and hexagonal boron nitride, encapsulating the ball-milled mixture at a pressure in a range of from about 15 GPa to about 25 GPa, and sintering the pressurized encapsulated ball-milled mixture at a temperature in a range of from about 1800-2500 K. The product bulk, superhard, nanocomposite compacts were well sintered compacts with nanocrystalline grains of at least one high-pressure phase of B--C--N surrounded by amorphous diamond-like carbon grain boundaries. The bulk compacts had a measured Vicker's hardness in a range of from about 41 GPa to about 68 GPa.

  15. Boundary Entropy Can Increase Under Bulk RG Flow

    Energy Technology Data Exchange (ETDEWEB)

    Green, Daniel; Mulligan, Michael; Starr, David


    The boundary entropy log(g) of a critical one-dimensional quantum system (or two-dimensional conformal field theory) is known to decrease under renormalization group (RG) flow of the boundary theory. We study instead the behavior of the boundary entropy as the bulk theory flows between two nearby critical points. We use conformal perturbation theory to calculate the change in g due to a slightly relevant bulk perturbation and find that it has no preferred sign. The boundary entropy log(g) can therefore increase during appropriate bulk flows. This is demonstrated explicitly in flows between minimal models. We discuss the applications of this result to D-branes in string theory and to impurity problems in condensed matter.

  16. Stability analysis of bulk viscous anisotropic universe model (United States)

    Sharif, M.; Mumtaz, Saadia


    This paper is devoted to study the phase space analysis of locally rotationally symmetric Bianchi type I universe model by taking three different cases for bulk viscosity coefficient. An autonomous system of equations is established by defining normalized dimensionless variables. In order to investigate stability of the system, we evaluate corresponding critical points for different values of the parameters. In the case of bulk viscous matter and radiation, the parameters η=η0 and m≥0.8 show realistic evolution of the universe (prior radiation dominated era, conventional decelerated matter dominated state and ultimately accelerated expansion). We conclude that stable solutions exist in the presence of bulk viscosity with different choices of parameter m.

  17. Retrieving HapMap Data via Bulk Download. (United States)

    Smith, Albert Vernon


    INTRODUCTIONThe primary goal of the International Haplotype Map Project has been to develop a haplotype map of the human genome that describes the common patterns of genetic variation, in order to accelerate the search for the genetic causes of human disease. Within the project, ~3.9 million distinct single-nucleotide polymorphisms (SNPs) have been genotyped in 270 individuals from four worldwide populations. The project data are available for unrestricted public use at the HapMap Web site. This site, which is the primary portal to genotype data produced by the project, offers bulk downloads of the data set, as well as interactive data browsing and analysis tools that are not available elsewhere. Bulk downloads of chromosome- or genome-wide data provide text dumps of the entire HapMap data set. Although complete, such downloads do not provide any filtering or selection services. This protocol describes the retrieval of HapMap data via bulk download.

  18. Efficient Bulk Operations on Dynamic R-Trees

    DEFF Research Database (Denmark)

    Arge, Lars Allan; Hinrichs, Klaus; Vahrenhold, Jan


    present our technique in terms of the so-called R-tree and its variants, as they have emerged as practically efficient indexing methods for spatial data. Our method uses ideas from the buffer tree lazy buffering technique and fully utilizes the available internal memory and the page size of the operating...... best known bulk update methods with respect to update time, and that it produces a better quality index in terms of query performance. One important novel feature of our technique is that in most cases it allows us to perform a batch of updates and queries simultaneously. To be able to do so...... intensively in the database community. The continuous arrival of massive amounts of new data makes it important to update existing indexes (bulk updating ) efficiently. In this paper we present a simple, yet efficient, technique for performing bulk update and query operations on multidimensional indexes. We...

  19. Confined linear carbon chains as a route to bulk carbyne (United States)

    Shi, Lei; Rohringer, Philip; Suenaga, Kazu; Niimi, Yoshiko; Kotakoski, Jani; Meyer, Jannik C.; Peterlik, Herwig; Wanko, Marius; Cahangirov, Seymur; Rubio, Angel; Lapin, Zachary J.; Novotny, Lukas; Ayala, Paola; Pichler, Thomas


    Strong chemical activity and extreme instability in ambient conditions characterize carbyne, an infinite sp1 hybridized carbon chain. As a result, much less has been explored about carbyne as compared to other carbon allotropes such as fullerenes, nanotubes and graphene. Although end-capping groups can be used to stabilize carbon chains, length limitations are still a barrier for production, and even more so for application. We report a method for the bulk production of long acetylenic linear carbon chains protected by thin double-walled carbon nanotubes. The synthesis of very long arrangements is confirmed by a combination of transmission electron microscopy, X-ray diffraction and (near-field) resonance Raman spectroscopy. Our results establish a route for the bulk production of exceptionally long and stable chains composed of more than 6,000 carbon atoms, representing an elegant forerunner towards the final goal of carbyne’s bulk production.

  20. Periurethral bulking agents for female stress urinary incontinence in Canada. (United States)

    Mamut, Adiel; Carlson, Kevin V


    Urethral bulking aims to improve urethral mucosal coaptation, and thus outlet resistance, in an effort to limit stress-induced leakage. While efforts have been made to employ bulking agents to treat stress urinary incontinence (SUI) for more than 100 years, we remain wanting for the perfect injectable. Regardless of the agent studied, efficacy is modest at best, repeat injections are the norm, and long-term followup is conspicuously lacking. This treatment, however, fills an important need in our armamentarium against SUI, serving those patients who are not candidates for more invasive interventions and those with multiple prior failed surgeries. This review offers a contemporary discussion on the role of periurethral bulking therapy in Canada, along with practical aspects of its application.

  1. Quantifying the delocalization of surface and bulk F-centers (United States)

    Janesko, Benjamin G.; Jones, Stephanie I.


    Electrons trapped in ionic crystal defects form color centers (F-centers) important in surface science, catalysis, and optoelectronic devices. We apply the electron delocalization range function (EDR) to quantify the delocalization of surface and bulk F-centers. The EDR uses computed one-particle density matrices to quantify ;delocalization lengths; capturing the characteristic size of orbital lobes. Ab initio cluster model calculations confirm that the delocalization lengths of bulk alkali halide F-centers scale with the size of the anion vacancy. Calculations on magnesium oxide surface Fs and Fs+ centers, as well as other anionic surface defects, show how the trapped electrons' delocalization depends on the defect morphology, defect occupancy, and the approximate treatment of electron correlation. Application to N2 activation by anionic surface defects illustrate how the trapped electron localizes into the adsorbed molecule's unoccupied orbitals. The results confirm that the EDR provides a useful tool for understanding the chemistry of surface- and bulk-trapped electrons.

  2. Large-scale HTS bulks for magnetic application

    Energy Technology Data Exchange (ETDEWEB)

    Werfel, Frank N., E-mail: [Adelwitz Technologiezentrum GmbH (ATZ), Rittergut Adelwitz 16, 04886 Arzberg-Adelwitz (Germany); Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter [Adelwitz Technologiezentrum GmbH (ATZ), Rittergut Adelwitz 16, 04886 Arzberg-Adelwitz (Germany)


    Highlights: ► ATZ Company has constructed about 130 HTS magnet systems. ► Multi-seeded YBCO bulks joint the way for large-scale application. ► Levitation platforms demonstrate “superconductivity” to a great public audience (100 years anniversary). ► HTS magnetic bearings show forces up to 1 t. ► Modular HTS maglev vacuum cryostats are tested for train demonstrators in Brazil, China and Germany. -- Abstract: ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN{sub 2} and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500–3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN{sub 2} allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved.

  3. Numerical modelling of iron-pnictide bulk superconductor magnetization (United States)

    Ainslie, Mark D.; Yamamoto, Akiyasu; Fujishiro, Hiroyuki; Weiss, Jeremy D.; Hellstrom, Eric E.


    Iron-based superconductors exhibit a number of properties attractive for applications, including low anisotropy, high upper critical magnetic fields (H c2) in excess of 90 T and intrinsic critical current densities above 1 MA cm-2 (0 T, 4.2 K). It was shown recently that bulk iron-pnictide superconducting magnets capable of trapping over 1 T (5 K) and 0.5 T (20 K) can be fabricated with fine-grain polycrystalline Ba0.6K0.4Fe2As2 (Ba122). These Ba122 magnets were processed by a scalable, versatile and low-cost method using common industrial ceramic processing techniques. In this paper, a standard numerical modelling technique, based on a 2D axisymmetric finite-element model implementing the H -formulation, is used to investigate the magnetisation properties of such iron-pnictide bulk superconductors. Using the measured J c(B, T) characteristics of a small specimen taken from a bulk Ba122 sample, experimentally measured trapped fields are reproduced well for a single bulk, as well as a stack of bulks. Additionally, the influence of the geometric dimensions (thickness and diameter) on the trapped field is analysed, with a view of fabricating larger samples to increase the magnetic field available from such trapped field magnets. It is shown that, with current state-of-the-art superconducting properties, surface trapped fields >2 T could readily be achieved at 5 K (and >1 T at 20 K) with a sample of diameter 50 mm. Finally, an aspect ratio of between 1 and 1.5 for R/H (radius/thickness) would be an appropriate compromise between the accessible, surface trapped field and volume of superconducting material for bulk Ba122 magnets.

  4. Bulk Restoration for SDN-Based Transport Network

    Directory of Open Access Journals (Sweden)

    Yang Zhao


    Full Text Available We propose a bulk restoration scheme for software defined networking- (SDN- based transport network. To enhance the network survivability and improve the throughput, we allow disrupted flows to be recovered synchronously in dynamic order. In addition backup paths are scheduled globally by applying the principles of load balance. We model the bulk restoration problem using a mixed integer linear programming (MILP formulation. Then, a heuristic algorithm is devised. The proposed algorithm is verified by simulation and the results are analyzed comparing with sequential restoration schemes.

  5. The role of Lecane rotifers in activated sludge bulking control. (United States)

    Fiałkowska, Edyta; Pajdak-Stós, Agnieszka


    Experiments were conducted on Lecane inermis feeding on filamentous bacteria and living in activated sludge to determine if the rotifers can control the growth of the bacteria responsible for bulking. The experiments showed that Lecane are capable of significantly reducing the density of Microthrix parvicella filaments. The rotifers not only survived the transfer from the culture to the activated sludge, but they multiplied quickly when foraging on filamentous bacteria. By reducing the number of filaments, the rotifers improved settling properties of the sludge. This is apparently the first report on the possibility of using rotifers to control bulking.

  6. The dynamic bulk modulus of three glass-forming liquids

    DEFF Research Database (Denmark)

    Niss, Kristine; Christensen, Tage Emil; Dyre, J. C.


    We present dynamic adiabatic bulk modulus data for three organic glass-forming liquids: two van der Waal's liquids, trimethyl-pentaphenyl-trisiloxane (DC705) and dibuthyl phtalate (DBP), and one hydrogen-bonded liquid, 1,2-propanediol (PD). All three liquids are found to obey time-temperature sup......We present dynamic adiabatic bulk modulus data for three organic glass-forming liquids: two van der Waal's liquids, trimethyl-pentaphenyl-trisiloxane (DC705) and dibuthyl phtalate (DBP), and one hydrogen-bonded liquid, 1,2-propanediol (PD). All three liquids are found to obey time...

  7. Band structure in bulk entanglement spectrum of quantum Hall state (United States)

    Lu, Chi-Ken; Chiou, D.-W.; Lin, F.-L.

    We study the bulk entanglement spectrum of integer quantum Hall state with a symmetric checkerboard partition of space. By reformulating the correlation matrix in a guiding center representation, we show that the problem is mapped to a two-dimensional lattice with unit vector determined by the field and partition grid. The bulk entanglement spectrum shows the particle-hole symmetry and the band touching, whic are related to the dual symmetry of partition and the Chern number, respectively. The work was supported by Ministry of Science and Technology Taiwan.

  8. 30 CFR 57.6802 - Bulk delivery vehicles. (United States)


    ... Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Explosives Maintenance-Surface and Underground § 57.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a...

  9. Numerical study of bulk condensation in laminar flow diffusion chamber (United States)

    Mayorov, V. O.; Yastrebov, A. K.


    The process of bulk condensation was studied on a basis numerical solution of kinetic equation for the mass distribution function of droplet size and the equations of mass and energy balance. The effect of the condenser and preheater deference temperature was studied. Obtained results were compared with other authors’ experimental and numerical data qualitatively and quantitatively.

  10. Organic carbon organic matter and bulk density relationships in arid ...

    African Journals Online (AJOL)

    Evaluation of their stocks requires knowledge about BD. BD is affected by factors such as water, aeration status, root penetrate, clay content, texture, land use and management, therefore it is a very important soil parameter. Key words: Soil organic carbon, soil organic matter, soil bulk density, arid-semi arid soils.

  11. Can groundwater be successfully implemented as a bulk water ...

    African Journals Online (AJOL)

    Groundwater is a strategic water resource in rural Limpopo Province and it accounts for almost 70% of rural domestic water supply. The resource is ... Keywords: groundwater, GRIP, bulk water supply, information variability, borehole productivity, conjunctive ..... Based on phased implementation, the model was created to.

  12. Effect of bulk modulus on performance of a hydrostatic transmission ...

    Indian Academy of Sciences (India)

    ) and fuzzy controllers on the angular velocity of a hydrostatic transmission system by means of Matlab-Simulink. A very novel aspect is that it includes the analysis of the effect of bulk modulus on system control. Simulation results demonstrates ...

  13. The homogenisation of bulk material in blending piles.

    NARCIS (Netherlands)

    Gerstel, A.W.


    In this thesis the homogenisation of bulk material in three types of piles is dealt with. The homogenisation implies that the fluctuations of a material proprety in the input flow of the pile are transformed into output fluctuations, whereby the latter ones are evened out. Analyses are presented

  14. Effect Of Bulk Density Variation On The Compression Strength Of ...

    African Journals Online (AJOL)

    This paper reports a study conducted to assess the influence of variation of bulk density on compression strength of clay-bonded sand. Five sand mixes containing silica sand, sodium silicate gel (1 wt. % to 5 wt. %), potters' clay (2 wt. %), and about 5 wt. % water were produced. Each mix was divided into three portions to ...

  15. Core vs. Bulk Samples in Soil-Moisture Tension Analyses (United States)

    Walter M. Broadfoot


    The usual laboratory procedure in determining soil-moisture tension values is to use "undisturbed" soil cores for tensions up to 60 cm. of water and bulk soil samples for higher tensions. Low tensions are usually obtained with a tension table and the higher tensions by use of pressure plate apparatus. In tension analysis at the Vicksburg Infiltration Project...

  16. Postharvest quality of carrot cultivars, packaged and in bulk | Gioppo ...

    African Journals Online (AJOL)

    This study aimed at evaluating the postharvest durability of different carrot cultivars stored in bulk. The experimental design was completely randomized, with four repetitions. The treatments were arranged in a 3 x 2 factorial design comprising three cultivars (Brasília RL and AF-1620 from SAKATA, and Alvorada from ...

  17. Promising Thermoelectric Bulk Materials with 2D Structures. (United States)

    Zhou, Yiming; Zhao, Li-Dong


    Given that more than two thirds of all energy is lost, mostly as waste heat, in utilization processes worldwide, thermoelectric materials, which can directly convert waste heat to electricity, provide an alternative option for optimizing energy utilization processes. After the prediction that superlattices may show high thermoelectric performance, various methods based on quantum effects and superlattice theory have been adopted to analyze bulk materials, leading to the rapid development of thermoelectric materials. Bulk materials with two-dimensional (2D) structures show outstanding properties, and their high performance originates from both their low thermal conductivity and high Seebeck coefficient due to their strong anisotropic features. Here, the advantages of superlattices for enhancing the thermoelectric performance, the transport mechanism in bulk materials with 2D structures, and optimization methods are discussed. The phenomenological transport mechanism in these materials indicates that thermal conductivities are reduced in 2D materials with intrinsically short mean free paths. Recent progress in the transport mechanisms of Bi 2 Te 3 -, SnSe-, and BiCuSeO-based systems is summarized. Finally, possible research directions to enhance the thermoelectric performance of bulk materials with 2D structures are briefly considered. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Estimating forest canopy bulk density using six indirect methods (United States)

    Robert E. Keane; Elizabeth D. Reinhardt; Joe Scott; Kathy Gray; James Reardon


    Canopy bulk density (CBD) is an important crown characteristic needed to predict crown fire spread, yet it is difficult to measure in the field. Presented here is a comprehensive research effort to evaluate six indirect sampling techniques for estimating CBD. As reference data, detailed crown fuel biomass measurements were taken on each tree within fixed-area plots...

  19. Modelling of bulk acoustic wave resonators for microwave filters

    NARCIS (Netherlands)

    Jose, Sumy; Hueting, Raymond Josephus Engelbart; Jansman, Andreas


    Modelling and development of high Q thin-film bulk acoustic wave (BAW) devices is a topic of research gaining attention due to good selectivity and steep transition band offered by these devices used for cellular applications. A preliminary survey of various modeling approaches of these devices and

  20. Organic carbon, organic matter and bulk density relationships in arid ...

    African Journals Online (AJOL)



    Jan 19, 2012 ... Tremblay et al. (2002), Prevost (2004), Mestdagh (2006) and Sakin et al. (2011). Jeffrey (1970) found that negative relationships between SOM and BD might be a universal opinion. Bulk density has been frequently related to SOC in soil storing large amounts of SOM. (Grigal et al., 1989; Huntington et al., ...

  1. Axially Symmetric Bianchi Type-I Bulk-Viscous Cosmological ...

    Indian Academy of Sciences (India)

    Abstract. The present study deals with spatially homogeneous and anisotropic axially symmetric Bianchi type-I cosmological model with time variable cosmological term in the presence of bulk viscous fluid. The Einstein's field equations are solved explicitly by time varying decel- eration parameter q. Consequences of the ...

  2. Formation of ternary Mg–Cu–Dy bulk metallic glasses

    Indian Academy of Sciences (India)


    Abstract. The glass-forming ability (GFA) of ternary Mg–Cu–Dy alloys was systematically investigated by using differential scanning calorimetry (DSC) and X-ray diffractometry (XRD) techniques. The results showed that a series of ternary Mg–Cu–Dy bulk metallic glasses (BGMs) with a diameter of 4–8 mm were suc-.

  3. Bulk viscosity of strange quark matter in density dependent quark ...

    Indian Academy of Sciences (India)

    Abstract. We have studied the bulk viscosity of strange quark matter in the density dependent quark mass model (DDQM) and compared results with calculations done earlier in the MIT bag model where u, d masses were neglected and first order interactions were taken into account. We find that at low temperatures and ...

  4. Axially Symmetric Bianchi Type-I Bulk-Viscous Cosmological ...

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Astrophysics and Astronomy; Volume 34; Issue 3. Axially Symmetric Bianchi ... The present study deals with spatially homogeneous and anisotropic axially symmetric Bianchi type-I cosmological model with time variable cosmological term in the presence of bulk viscous fluid. The Einstein's field ...

  5. Femtosecond laser-fabricated microstructures in bulk poly ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 75; Issue 6. Femtosecond laser-fabricated microstructures in bulk poly(methylmethacrylate) and poly(dimethylsiloxane) at 800 nm towards lab-on-a-chip applications. K L N Deepak S Venugopal Rao D Narayana Rao. Conributed Papers Volume 75 Issue 6 December ...

  6. Interlayer excitons in a bulk van der Waals semiconductor

    DEFF Research Database (Denmark)

    Arora, Ashish; Drueppel, Matthias; Schmidt, Robert


    , dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments...

  7. Microalgae for the production of bulk chemicals and biofuels

    NARCIS (Netherlands)

    Wijffels, R.H.; Barbosa, M.J.; Eppink, M.H.M.


    The feasibility of microalgae production for biodiesel was discussed. Although algae are not yet produced at large scale for bulk applications, there are opportunities to develop this process in a sustainable way. It remains unlikely, however, that the process will be developed for biodiesel as the

  8. Josephson supercurrent in a topological insulator without a bulk shunt

    NARCIS (Netherlands)

    Snelder, M.; Snelder, M.; Molenaar, C.G.; Molenaar, C.G.; Pan, Yu; Wu, D.; Huang, Y.; de Visser, A.; Golubov, A.A.; Golubov, Alexandre Avraamovitch; van der Wiel, Wilfred Gerard; Hilgenkamp, H.; Golden, M.S.; Brinkman, Alexander


    A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi Sb Te Se . We show that the transport in Bi Sb Te Se exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced

  9. Optimized reflector stacks for solidly mounted bulk acoustic wave resonators

    NARCIS (Netherlands)

    Jose, Sumy; Jansman, André B.M.; Hueting, Raymond Josephus Engelbart; Schmitz, Jurriaan


    The quality factor (Q) of a solidly mounted bulk acoustic wave resonator (SMR) is limited by substrate losses, because the acoustic mirror is traditionally optimized to reflect longitudinal waves only. We propose two different design approaches derived from optics to tailor the acoustic mirror for

  10. Estimating Soil Bulk Density and Total Nitrogen from Catchment ...

    African Journals Online (AJOL)

    Estimating Soil Bulk Density and Total Nitrogen from Catchment Attributes in Northern Ethiopia. ... The model coefficients of both analyses for the dependent variables showed higher for organic carbon (OC) as compared to the other variables even though higher values were found from GLM. This study thus confirmed that ...

  11. Ultrafast magnetization dynamics of Gd(0001): Bulk versus surface

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Muhammad; Bovensiepen, Uwe [Freie Universitaet Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin (Germany); Universitaet Duisburg-Essen, Fakultaet fuer Physik, Lotharstr. 1, 47048 Duisburg (Germany); Melnikov, Alexey [Freie Universitaet Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin (Germany); Fritz-Haber-Institut der Max-Planck Gesellschaft, Faradayweg 4-6, 14195 Berlin (Germany)


    Ultrafast laser-induced demagnetization of Gd(0001) has been investigated by magneto-induced optical second harmonic generation and the magneto-optical Kerr effect which facilitate a comparison of surface and bulk dynamics. We observe pronounced differences in the transient changes of the surface and bulk sensitive magneto-optical signals which we attribute to transfer of optically excited, spin-polarized carriers between surface and bulk states of the Gd(0001) film. A fluence dependent analysis of the bulk magnetization dynamics results in a weak variation of the demagnetization time constant, which starts at about 0.7 ps and increases by 10% within a fluence variation up to 1 mJ/cm{sup 2}. We compare these results with fluence dependent changes in the transient energy density calculated by the two temperature model. The determined characteristic times of excess energy transfer from the electron system to the lattice, which is mediated by e-ph scattering, range from 0.2 to 0.6 ps. Such a more pronounced fluence dependent change in the characteristic time compared to the observed rather weakly varying demagnetization times suggests a more advanced description of the optically excited state than by the two-temperature model. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Synaptotagmin-11 inhibits clathrin-mediated and bulk endocytosis. (United States)

    Wang, Changhe; Wang, Yeshi; Hu, Meiqin; Chai, Zuying; Wu, Qihui; Huang, Rong; Han, Weiping; Zhang, Claire Xi; Zhou, Zhuan


    Precise and efficient endocytosis is essential for vesicle recycling during a sustained neurotransmission. The regulation of endocytosis has been extensively studied, but inhibitors have rarely been found. Here, we show that synaptotagmin-11 (Syt11), a non-Ca(2+)-binding Syt implicated in schizophrenia and Parkinson's disease, inhibits clathrin-mediated endocytosis (CME) and bulk endocytosis in dorsal root ganglion neurons. The frequency of both types of endocytic event increases in Syt11 knockdown neurons, while the sizes of endocytosed vesicles and the kinetics of individual bulk endocytotic events remain unaffected. Specifically, clathrin-coated pits and bulk endocytosis-like structures increase on the plasma membrane in Syt11-knockdown neurons. Structural-functional analysis reveals distinct domain requirements for Syt11 function in CME and bulk endocytosis. Importantly, Syt11 also inhibits endocytosis in hippocampal neurons, implying a general role of Syt11 in neurons. Taken together, we propose that Syt11 functions to ensure precision in vesicle retrieval, mainly by limiting the sites of membrane invagination at the early stage of endocytosis. © 2015 The Authors.

  13. Soliton interaction in quadratic and cubic bulk media

    DEFF Research Database (Denmark)

    Johansen, Steffen Kjær; Bang, Ole


    in lossless bulk second order nonlinear optical materials with a nonvanishing third order nonlinearity. It is known that in pure second order systems a single soliton can never collapse whereas in systems with both nonlinearities and that stable single soliton propagation can only in some circumstances...

  14. Multi-agent adaptive systems in dry bulk shipping

    NARCIS (Netherlands)

    Engelen, Steve; Dullaert, Wout; Vernimmen, Bert

    Investment decisions in dry bulk shipping form one of the most difficult managerial tasks due to the high degree of uncertainty and the cyclical nature of the market. Adequate information on ship prices is, therefore, crucial when justifying such decisions. This paper is the first to embed trading

  15. Serrated plastic flow during nanoindentation of a bulk metallic glass

    NARCIS (Netherlands)

    Golovin, YI; Ivolgin, [No Value; Khonik, VA; Kitagawa, K; Tyurin, AI


    The results of nanoindentation tests of bulk glassy Pd40CU30Ni10P20 using a specially designed instrument with high time and spatial resolution are presented. Pronounced serrations of the indenter penetration depth are observed. The parameters of serrated flow (the number of serrations, their

  16. Bulk amorphous metallic alloys: Synthesis by fluxing techniques and properties

    Energy Technology Data Exchange (ETDEWEB)

    He, Yi; Shen, Tongde; Schwarz, R.B.


    Bulk amorphous alloys having dimensions of at least 1 cm diameter have been prepared in the Pd-Ni-P, Pd-Cu-P, Pd-Cu-Ni-P, and Pd-Ni-Fe-P systems using a fluxing and water quenching technique. The compositions for bulk glass formation have been determined in these systems. For these bulk metallic glasses, the difference between the crystallization temperature T{sub x}, and the glass transition temperature T{sub g}, {Delta}T = T{sub x} - T{sub g}, ranges from 60 to 1 10 K. These large values of {Delta}T open the possibility for the fabrication of amorphous near net-shape components using techniques such as injection molding. The thermal, elastic, and magnetic properties of these alloys have been studied, and we have found that bulk amorphous Pd{sub 40}Ni{sub 22.5}Fe{sub 17.5}P{sub 20} has spin glass behavior for temperatures below 30 K. 65 refs., 14 figs., 3 tabs.

  17. Microbial production of bulk chemicals: development of anaerobic processes

    NARCIS (Netherlands)

    Weusthuis, R.A.; Lamot, I.; Oost, van der J.; Sanders, J.P.M.


    nnovative fermentation processes are necessary for the cost-effective production of bulk chemicals from renewable resources. Current microbial processes are either anaerobic processes, with high yield and productivity, or less-efficient aerobic processes. Oxygen utilization plays an important role

  18. Effects of shelterbelt on soil bulk density, particle density, total ...

    African Journals Online (AJOL)

    The effect of shelterbelt at measurement position (60,120 and 180) on bulk density, particle density, total porosity and moisture contents of semi-arid soils in the extreme part of northwestern, Nigeria was studied. The effect of shelterbelt on the three measurement positions was compared with the unsheltered area. Changes ...

  19. Integrated analysis software for bulk power system stability

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, T.; Nagao, T.; Takahashi, K. [Central Research Inst. of Electric Power Industry, Tokyo (Japan)


    This paper presents Central Research Inst.of Electric Power Industry - CRIEPI`s - own developed three softwares for bulk power network analysis and the user support system which arranges tremendous data necessary for these softwares with easy and high reliability. (author) 3 refs., 7 figs., 2 tabs.

  20. Anisotropic cosmological models with bulk viscosity and particle ...

    Indian Academy of Sciences (India)

    equations in two types of cosmologies, one with power-law expansion and the other with expo- nential expansion. Cosmological model with power-law expansion has a Big-Bang singularity at time t = 0, whereas the model with exponential expansion has no finite singularity. We study bulk viscosity and particle creation in ...

  1. Anisotropic cosmological models with bulk viscosity and particle ...

    Indian Academy of Sciences (India)

    Particle creation and bulk viscosity are considered as separate irreversible processes. The energy–momentum tensor is modified to accommodate the viscous pressure and creation pressure which is associated with the creation of matter out of gravitational field. A special law of variation of Hubble parameter is applied to ...

  2. Free standing bulk metallic glass microcomponents: Tooling considerations

    DEFF Research Database (Denmark)

    Byrne, Cormac; Eldrup, Morten Mostgaard; Ohnuma, Masato


    Bulk metallic glasses have enormous potential for use in small-scale devices such as MEMS and biomedical components. Thermoplastic forging of free standing components poses challenges unlike those seen when forging crystalline materials. Central to these challenges is the simultaneous advantage/disadvantage...

  3. Essays on Port, Container, and Bulk Chemical Logistics Optimization

    NARCIS (Netherlands)

    E. van Asperen (Eelco)


    textabstractThe essays in this thesis are concerned with two main themes in port logistics. The first theme is the coordination of transport arrivals with the distribution processes and the use of storage facilities. We study this for both containerized and bulk chemical transport. The second theme

  4. Modelling dust liberation in bulk material handling systems

    NARCIS (Netherlands)

    Derakhshani, S.M.


    Dust has negative effects on the environmental conditions, human health as well as industrial equipment and processes. In this thesis, the transfer point of a belt conveyor as a bulk material handling system with a very high potential place for dust liberation is studied. This study is conducted

  5. Geodesic bulk diagrams on the Bruhat-Tits tree (United States)

    Gubser, Steven S.; Parikh, Sarthak


    Geodesic bulk diagrams were recently shown to be the geometric objects which compute global conformal blocks. We show that this duality continues to hold in p -adic AdS /CFT , where the bulk is replaced by the Bruhat-Tits tree, an infinite regular graph with no cycles, and the boundary is described by p -adic numbers, rather than reals. We apply the duality to evaluate the four-point function of scalar operators of generic dimensions using tree-level bulk diagrams. Relative to standard results from the literature, we find intriguing similarities as well as significant simplifications. Notably, all derivatives disappear in the conformal block decomposition of the four-point function. On the other hand, numerical coefficients in the four-point function as well as the structure constants take surprisingly universal forms, applicable to both the reals and the p -adics when expressed in terms of local zeta functions. Finally, we present a minimal bulk action with nearest neighbor interactions on the Bruhat-Tits tree, which reproduces the two-, three-, and four-point functions of a free boundary theory.

  6. Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons

    Energy Technology Data Exchange (ETDEWEB)

    Z. Zak Fang, H. Y. Sohn


    This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

  7. Bulk and boundary critical behavior at Lifshitz points

    Indian Academy of Sciences (India)

    Bulk and boundary critical behavior at Lifshitz points. H W DIEHL. Fachbereich Physik, Universität Duisburg-Essen, Campus Essen, D-45117 Essen, Germany. E-mail: Abstract. Lifshitz points are multicritical points at which a disordered phase, a ho- mogeneous ordered phase, and a ...

  8. Bulk isotropic negative-index material design for infrared

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Malureanu, Radu; Lavrinenko, Andrei

    Responding to the strong call for isotropic bulk negative index material we propose a Split Cube in Car-cass design. It shows negative refractive index -1.5, figure-of-merit 2 and transmittivity 30% for one layer at the telecommunication wavelength 1.6 μm. Effective parameters converge fast...

  9. Reflector stack optimization for Bulk Acoustic Wave resonators

    NARCIS (Netherlands)

    Jose, Sumy


    Thin-film bulk-acoustic-wave (BAW) devices are used for RF selectivity in mobile communication system and other wireless applications. Currently, the conventional RF filters are getting replaced by BAW filters in all major cell phone standards. In this thesis, we study solidly mounted BAW resonators

  10. Estimating Soil Bulk Density and Total Nitrogen from Catchment ...

    African Journals Online (AJOL)


    This is based on the fact that. BD and TN are .... reference the image and as training samples for supervised classification of the Landsat image 30 m x .... 2 change for soil bulk density estimation in the Mai-Negus catchment, northern Ethiopia. Parameter. Coefficient. Standard error. Significance level. R2 change. Constant.

  11. Climate control of a bulk storage room for foodstuffs

    NARCIS (Netherlands)

    van Mourik, S.; Zwart, Heiko J.; Keesman, K.J.; Troch, Inge; Breitenecker, Felix


    A storage room contains a bulk of potatoes that produce heat due to respiration. A ventilator blows cooled air around to keep the potatoes cool and prevent spoilage. The aim is to design a control law such that the product temperature is kept at a constant, desired level. This physical system is

  12. Ultimate efficiency of polymer/fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Koster, LJA; Mihailetchi, VD; Blom, PWM


    We present model calculations to explore the potential of polymer/fullerene bulk heterojunction solar cells. As a starting point, devices based on poly(3-hexylthiophene) and 6,6-phenyl C-61-butyric acid methyl ester (PCBM), reaching 3.5% efficiency, are modeled. Lowering the polymeric band gap will

  13. Determination of Tolterodine tartrate in bulk and formulation by ...

    African Journals Online (AJOL)

    ... quantification (LOQ) of the method were 0.08 and 1 μg mL-1, respectively. Conclusion: The developed method is validated and has high recovery and precision, and thus is suitable for routine analysis of the drug in bulk and formulations. Keywords: Tolterodine, Tropaeolin, Extractive colorimetry, Validation, Solid dosage ...

  14. 29 CFR 794.131 - “Customer * * * engaged in bulk distribution”. (United States)


    ... 29 Labor 3 2010-07-01 2010-07-01 false âCustomer * * * engaged in bulk distributionâ. 794.131... Sales Made to Other Bulk Distributors § 794.131 “Customer * * * engaged in bulk distribution”. A sale to a customer of an enterprise engaged in the wholesale or bulk distribution of petroleum products will...


    Energy Technology Data Exchange (ETDEWEB)

    SCHAUS, P.S.


    In May 2006, CH2M Hill Hanford Group, Inc. chartered an Expert Review Panel (ERP) to review the current status of the Demonstration Bulk Vitrification System (DBVS). It is the consensus of the ERP that bulk vitrification is a technology that requires further development and evaluation to determine its potential for meeting the Hanford waste stabilization mission. No fatal flaws (issues that would jeopardize the overall DBVS mission that cannot be mitigated) were found, given the current state of the project. However, a number of technical issues were found that could significantly affect the project's ability to meet its overall mission as stated in the project ''Justification of Mission Need'' document, if not satisfactorily resolved. The ERP recognizes that the project has changed from an accelerated schedule demonstration project to a formally chartered project that must be in full compliance with DOE 413.3 requirements. The perspective of the ERP presented herein, is measured against the formally chartered project as stated in the approved Justification of Mission Need document. A justification of Mission Need document was approved in July 2006 which defined the objectives for the DBVS Project. In this document, DOE concluded that bulk vitrification is a viable technology that requires additional development to determine its potential applicability to treatment of a portion of the Hanford low activity waste. The DBVS mission need statement now includes the following primary objectives: (1) process approximately 190,000 gallons of Tank S-109 waste into fifty 100 metric ton boxes of vitrified product; (2) store and dispose of these boxes at Hanford's Integrated Disposal Facility (IDF); (3) evaluate the waste form characteristics; (4) gather pilot plant operability data, and (5) develop the overall life cycle system performance of bulk vitrification and produce a comparison of the bulk vitrification process to building a second LAW

  16. Epitaxially Grown Layered MFI–Bulk MFI Hybrid Zeolitic Materials

    KAUST Repository

    Kim, Wun-gwi


    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered zeolite material grown epitaxially on the surface of a bulk zeolite material. Specifically, layered (2-D) MFI sheets were grown on the surface of bulk MFI crystals of different sizes (300 nm and 10 μm), thereby resulting in a hybrid material containing a unique morphology of interconnected micropores (∼0.55 nm) and mesopores (∼3 nm). The structure and morphology of this material, referred to as a "bulk MFI-layered MFI" (BMLM) material, was elucidated by a combination of XRD, TEM, HRTEM, SEM, TGA, and N2 physisorption techniques. It is conclusively shown that epitaxial growth of the 2-D layered MFI sheets occurs in at least two principal crystallographic directions of the bulk MFI crystal and possibly in the third direction as well. The BMLM material combines the properties of bulk MFI (micropore network and mechanical support) and 2-D layered MFI (large surface roughness, external surface area, and mesoporosity). As an example of the uses of the BMLM material, it was incorporated into a polyimide and fabricated into a composite membrane with enhanced permeability for CO2 and good CO2/CH4 selectivity for gas separations. SEM-EDX imaging and composition analysis showed that the polyimide and the BMLM interpenetrate into each other, thereby forming a well-adhered polymer/particle microstructure, in contrast with the defective interfacial microstructure obtained using bare MFI particles. Analysis of the gas permeation data with the modified Maxwell model also allows the estimation of the effective volume of the BMLM particles, as well as the CO2 and CH4 gas permeabilities of the interpenetrated layer at the BMLM/polyimide interface. © 2012 American Chemical Society.

  17. Bulk Laser Material Modification: Towards a Kerfless Laser Wafering Process (United States)

    LeBeau, James

    Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists. The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser. A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable

  18. Investigation of bulk acoustic microwaves excited by an interdigital transducer

    Directory of Open Access Journals (Sweden)

    Reshotka O. G.


    Full Text Available Excitation of bulk and surface acoustic waves with the interdigital transducer (IDT, which is deposited on the surface of piezoelectric crystal, is widely used in the development of devices in acoustoelectronics and in the design of the microwave acousto-optic deflectors. Excitation of bulk acoustic waves by IDT in the devices on surface acoustic waves leads to the appearance of spurious signals. At the same time excitation of bulk acoustic waves with IDT from the surface of lithium niobate crystals allows creating high frequency acousto-optic deflectors, which makes possible to significantly simplify the technology of their production. Therefore, significant attention is paid to the task of excitation and distribution of bulk acoustic waves with IDT including recent times by the method of simulation of their excitation and distribution. The obtained theoretical results require experimental verification. This paper documents the visualization of acoustic beams excited with IDT from the XY-surface of lithium niobate crystals. The Bragg cells with LiNbO3 crystals coated with IDT with a different period of electrodes were manufactured for the experimental research of excitation and distribution of bulk acoustic waves. Visualization results have shown that the acoustic waves excited with IDT distribute in both the Fresnel zone and the Fraunhofer zone. The length of these zones is caused by individual elementary emitters of which consists the IDT (by their size. At the same time the far zone for IDT is located at distances much greater than the actual size of the LiNbO3 crystals. This peculiarity is not always taken into account when calculating diffraction. The achieved results can be used to design high-frequency acousto-optic devices, as well as in the development of devices based on surface acoustic waves.

  19. Os últimos avanços na previsibilidade dos campos de umidade no sistema global de assimilação de dados e previsão numérica de tempo do CPTEC/INPE Latest advances in the prediction of humidity fields in the data assimilation and numerical weather prediction global system from CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Luiz Fernando Sapucci


    Full Text Available Nos últimos anos, duas importantes implementações foram feitas no sistema global de assimilação de dados e previsão de tempo do CPTEC/INPE, as quais têm uma relação direta com a previsibilidade dos campos de umidade. A primeira é a assimilação de valores do vapor d'água integrado na atmosfera (IWV-Integrated Water Vapor. A segunda é a utilização de uma versão melhorada do modelo de previsão de tempo, juntamente com o aumento da resolução da grade. O objetivo do presente estudo é caracterizar o impacto de tais implementações na melhoria da previsibilidade da umidade. Para isso, quatro experimentos foram realizados utilizando as versões T126L28 (sem as melhorias e T213L42 (com a implementação das melhorias do modelo global do CPTEC, com e sem a assimilação do IWV. Os resultados obtidos mostram que o impacto da assimilação de IWV é maior nas primeiras horas de previsão. Por outro lado, as melhorias implementadas no modelo geram bons resultados para as previsões de médio (após 60 horas a longo prazo. Em consequência disso, o impacto combinado de ambas as implementações é significativo ao longo de todo o período de integração avaliado. Nessa circunstância, o intervalo das previsões do IWV consideradas estatisticamente válidas (coeficiente de correlação de anomalia acima de 0.6 é ampliado em 25 horas na região tropical e em 18 horas na América do Sul.Two important implementations, directly related to the prediction of atmospheric humidity fields, have been introduced during in the recent years in the weather forecast model and its data assimilation system at CPTEC/INPE. The first is the inclusion of Integrated Water Vapor (IWV data in the assimilation scheme. The second is the improvement of the weather forecast model along with an increase in the grid resolution. The goal of this paper is to characterize the impact of these implementations in the prediction of humidity fields. To achieve this goal

  20. Characterization of InP and InGaN quantum dots for single photon sources and AlGaInAs quantum dots in intermediate band solar cells; Charakterisierung von InP und InGaN Quantenpunkten als Einzelphotonenquellen sowie von AlGaInAs Quantenpunkten in Zwischenband-Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Kremling, Stefan


    This thesis describes the characterization of semiconductor quantum dots (QDs) in different material systems with potential applications as single photon emitters or intermediate band solar cells. All investigations were carried out by means of optical spectroscopy methods. First, the theoretical background regarding the physics of QDs with respect to their electronic structure and their associated statistical properties are presented. Especially peculiarities of photon statistics of light are explained. Moreover, a closer look at the physics of solar cells and the respective carrier transport is given. Then experimental methods, which were used to characterize the QD-samples, are briefly explained. First, the components and techniques of optical spectroscopy for the study of individual, isolated QDs are described. Second, different experimental technologies for the characterization of solar cells are discussed. The method for measuring the two-photon-absorption process is explained in detail. The section of experimental results begins with studies of individual and spectrally isolated InP QD. Due to the low surface density of one QD per μm{sup 2}, it is possible to study the physical properties of individual QDs optically without additional lateral sample structuring. Based on power and polarization dependent measurements, various luminescence peaks of a single QD were associated with different exciton states. In addition, the QDs were tested subject to an external magnetic field in a Faraday configuration. Finally, the temporal photon statistics of a single QD was tested using autocorrelation measurement. Afterwards, InP QDs manufactured by cyclic material deposition with growth interruptions were investigated by means of PL spectroscopy. Based on excitation power and time-resolved measurements on the QD ensemble, a bimodal QD distribution of type-I and type-II band alignment was observed. In addition, different exciton states were identified on spectrally