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Sample records for bulk semi-insulating inp

  1. Raman investigations on nitrogen ion implantation effects on semi-insulating InP

    CERN Document Server

    Santhakumar, K; Kesavamoorthy, R; Magudapathy, P; Nair, K G M; Ravichandran, V

    2002-01-01

    Raman scattering measurements on liquid-encapsulated Czochralski-grown Fe-doped semi-insulating InP(1 0 0) single crystal substrates have been carried out before and after 120 keV N sup + implantation for various doses from 10 sup 1 sup 3 to 10 sup 1 sup 5 cm sup - sup 2 and also after post-implantation rapid thermal annealing of these samples. It is observed that LO phonon mode frequency decreases and full width at half maximum (FWHM) increases with fluence due to implantation-induced lattice damage. Forbidden Raman TO mode in (1 0 0) cut InP is observed at the doses of 5x10 sup 1 sup 3 and 5x10 sup 1 sup 4 cm sup - sup 2. This might have appeared due to the polycrystalline and/or misoriented regions created during implantation. TO mode is not observed for high doses in as-implanted samples due to excessive lattice damage induced by the implantation. On rapid thermal annealing at 573 K for 30 s, the implanted samples show a partial recovery of LO phonon mode frequency and FWHM due to partial annealing of the...

  2. The effect of nitrogen implantation on structural changes in semi-insulating InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K.; Jayavel, P.; Reddy, G.L.N.; Sastry, V.S.; Nair, K.G.M.; Ravichandran, V. E-mail: vravichandran@vsnl.com

    2003-12-01

    110 keV nitrogen ions (N{sup +}) of fluences 1 x 10{sup 14}-1 x 10{sup 17} cm{sup -2} have been implanted in liquid encapsulated Czochralski grown Fe-doped semi-insulating indium phosphide (InP) single crystal substrates. Grazing incidence X-ray diffraction measurements on as-grown and implanted samples have been carried out and analyzed. At all above fluences, a broad hump in the region of InP(1 1 1) peaks is observed. It might have resulted from implantation-induced misoriented grains along certain preferred orientations. The peak observed at a d-value of 1.77 A for all the fluences becomes more pronounced as the implantation fluence increases up to 1 x 10{sup 16} cm{sup -2}. This could indicate formation of an Indium phosphide nitride alloy. Post-implantation annealing reduces the structural defects and assists in the growth of the nitride phase.

  3. Characterisation of vertical gradient freeze semi-insulating InP for use as a nuclear radiation detector

    International Nuclear Information System (INIS)

    The performance of a nuclear radiation detector fabricated from Vertical Gradient Freeze (VGF) semi-insulating Fe-doped InP was investigated. Pulse height spectra were acquired when the detector was irradiated with alpha particles from 241Am, as a function of temperature and detector bias voltage. The spectroscopic performance of the detector was limited at room temperature due to the presence of a high leakage current. At a bias of -150 V, a room temperature leakage current density of 2.4x10-6 A/mm2 was observed which reduced to 7.1x10-8 A/mm2 at a temperature of -21 degree sign C. By biasing the irradiated detector contact at either a negative or positive potential, the charge collection efficiency (CCE) was measured separately for pulses produced predominantly by electron transport and for pulses produced predominantly by hole transport, respectively. At -21 degree sign C a maximum CCE of 72% was obtained for the electron signal and 44% for the hole signal. As a function of bias the CCE of the electrons remained constant in the temperature range -21 degree sign C to +19 degree sign C, whilst that of the holes exhibited a significant variation. By comparison with the Hecht relationship estimates of the carrier mobility-lifetime (μτ) products are deduced, which are similar for both holes and electrons and in the range 5x10-7-8x10-7 cm2/V. A reduction in μτ is observed at lower temperature for holes, whereas the value for electrons remains constant over the temperature range studied

  4. Semi-insulating bulk GaAs thermal neutron imaging arrays

    International Nuclear Information System (INIS)

    Prototype thermal neutron imaging arrays have been fabricated from semi-insulating (SI) bulk GaAs. The arrays are 1 mm square Schottky diodes arranged in a 5 x 5 matrix. GaAs Schottky barrier radiation detectors are relatively radiation hard and can withstand higher neutron and gamma ray exposure fields than MOS-based Si diode imaging arrays. The devices use 10B to convert incident thermal neutrons to energetic Li ions and alpha particles. The truncated field effect observed with SI bulk GaAs detectors produces high and los field regions in the device. Electron-hole pairs produced in the active (or high field) region of the device contribute to the observed induced charge, whereas electron-hole pairs produced in the low field region contribute very little to the induced charge. The effect is manipulated to reduce the background gamma ray interaction rate in the devices. Preliminary results show no indication of device degradation after exposure to a total thermal neutron fluence of 1.73 x 1013 n/cm2. Images have been formed of 1, 1.5, and 2 mm holes and crosses from 2 mm thick Cd templates

  5. Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

    Institute of Scientific and Technical Information of China (English)

    Takayuki Yamanaka; Hideki Fukano; Ken Tsuzuki; Munehisa Tamura; Ryuzo Iga; Matsuyuki Ogasawara; Yasuhiro Kondo; Tadashi Saitoh

    2003-01-01

    A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.

  6. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Energy Technology Data Exchange (ETDEWEB)

    Yatskiv, R. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic)], E-mail: yatskiv@ufe.cz; Zdansky, K. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Pekarek, L. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8 (Czech Republic)

    2009-01-21

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a {sup 241}Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  7. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    International Nuclear Information System (INIS)

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  8. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Science.gov (United States)

    Yatskiv, R.; Zdansky, K.; Pekarek, L.

    2009-01-01

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature ( T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  9. Terahertz Radiation from Large Aperture Bulk Semi-insulating GaAs Photoconductive Dipole Antenna

    Institute of Scientific and Technical Information of China (English)

    施卫; 贾婉丽; 侯磊; 许景周; 张希成

    2004-01-01

    We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3mm between two Au/Ge/Ni electrodes, triggered by 800nm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than that of a normal GaAs dipole antenna.

  10. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.

    2004-07-01

    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  11. InP Bulk Crystals Grown from Various Stoichiometric Melt

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed.

  12. 3英寸半绝缘4H-SiC单晶的研制%Bulk Growth of the Semi-Insulating 3-inch 4H-SiC

    Institute of Scientific and Technical Information of China (English)

    王利杰; 冯玢; 洪颖; 孟大磊; 王香泉; 严如岳

    2011-01-01

    报道了采用物理气相传输(PVT)法进行SiC单晶生长方面取得的最新进展,成功研制得到固态微波器件急需的3英寸(75 mm)半绝缘4H-SiC衬底.使用计算机模拟技术,进行了3英寸(75 mm)4H-SiC晶体生长的热场设计,并在此基础上研制出适合3英寸(75 mm)4H-SiC PVT生长的晶体生长设备,采用喇曼光谱对晶体生长表面5点进行测试,结果均为单一的4H晶型,采用非接触电阻率面分布(COREMA)方法测得晶片电阻率为109~1012Ω·cm.微管道缺陷(MPD)测量采用熔融KOH腐蚀法,测得平均微管道密度为104个/cm2,其中晶片的30%区域微管道缺陷小于10个/cm2.使用X射线双晶衍射测试得到其半高宽(FWHM)为31 arcsec,说明所获得的晶体具有良好的结晶完整性.%The latest progress in the growth of the silicon carbide (SiC) by physical vapor transport (PVT) were reported. The 3-inch semi-insulating 4H-SiC substrate for microwave devices was successfully achieved. Using computer simulation technology, the thermal field of crystal growth was designed and the growth equipment of 3-inch 4H-SiC was developed. The polytype of the crystal was determined with Raman spectroscopy. The results show that 5 points on the as-grow surface are the single 4H polytype. The resistivity of the wafer is 109 - 1012 Ω ·cm measured by SemiMap COREMA-WT (contactless resistivity mapping). The crystallinity of the grown crystal was characterized by the molten KOH etching and X-ray rocking curve. The micropipe defects density (MPD) is averagely 104 cm-2,but in the 30% region of the wafer, the MPD is lower than 10 cm-2. The full width at half maximum (FWHM) is 31 arcsec measured by double-crystal XRD, the result shows that the crystalline quality is very good.

  13. Vanadium-Doped Semi-Insulating 6H-SiC for Microwave Power Device Applications

    Institute of Scientific and Technical Information of China (English)

    Li'na Ning; Zhihong Feng; Yingmin Wang; Kai Zhang; Zhen Feng; Xiangang Xu

    2009-01-01

    Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 Ωcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry (SIMS) was employed to determine the concen-tration of impurities in the crystals, such as B, Al, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity (1×106 Ωcm) in the wafer up to 80%. High-performance AlGaN/GaN high-electron-mobility-transistor (HEMT) materials and devices were grown and fabricated on semi-insulating 6H-SiC sub-strates. The two-dimensional electron gas (2DEG) mobility at room-temperature was 1795 cm2/V·s. The charge carrier concentration of the substrate determined by capacitance-voltage (C-V) test was 7.3 × 1015 cm-3. The device with a gate width of 1 mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.

  14. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    Science.gov (United States)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  15. Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

    OpenAIRE

    S Fung; Beling, CD; Youwen, Zhao; Xiaoliang, Xu; Min, Gong; Niefeng, Sun; Tongnian, Sun; Xudong, Chen; Ronggui, Zhang; Silin, Liu

    1998-01-01

    Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antis...

  16. Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe

    International Nuclear Information System (INIS)

    The availability of large-size, detector-grade CdZnTe crystals in large volume and at affordable cost is a key to the further development of radiation-detector applications based on this II-VI compound. The high pressure Bridgman technique that supplies the bulk of semi-insulating CdZnTe crystals used in X-ray, γ-ray detector and imaging devices at present is hampered by material issues that limit the yield of large-size and high-quality crystals. These include ingot cracking, formation of pipes, material homogeneity and the reproducibility of the material from growth to growth. The incorporation of macro defects in the material during crystal growth poses both material quality limitations and technological problems for detector fabrication. The effects of macro defects such as Te inclusions and pipes on the charge-transport properties of CdZnTe are discussed in this paper. Growth experiments designed to study the origin and formation of large defects are described. The importance of material-crucible interactions and control of thermodynamic parameters during crystal growth are also addressed. Opportunities for growth improvements and yield increases are identified

  17. Advanced BCD technology with vertical DMOS based on a semi-insulation structure

    Science.gov (United States)

    Kui, Ma; Xinghua, Fu; Jiexin, Lin; Fashun, Yang

    2016-07-01

    A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated. Project supported by the National Natural Science Foundation of China (No. 61464002), the Science and Technology Fund of Guizhou Province (No. Qian Ke He J Zi [2014]2066), and the Dr. Fund of Guizhou University (No. Gui Da Ren Ji He Zi (2013)20Hao).

  18. Specific features of the photoconductivity of semi-insulating cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  19. Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures

    Energy Technology Data Exchange (ETDEWEB)

    Gaubas, E. [Institute of Materials Science, Vilnius University, Applied Research, Sauletekio av. 10, Lt-10223, Vilnius (Lithuania)], E-mail: eugenijus.gaubas@ff.vu.lt; Vaitkus, J.; Kazlauskas, K.; Zukauskas, A. [Institute of Materials Science, Vilnius University, Applied Research, Sauletekio av. 10, Lt-10223, Vilnius (Lithuania); Grant, J.; Bates, R.; O' shea, V. [Department of Physics and Astronomy, University of Glasgow (United Kingdom); Strittmatter, A.; Bimberg, D. [Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Sekr. Pn 5-2, Hardenbergstr. 36, D-10623 Berlin (Germany); Gibart, P. [Lumilog 2720, Chemin Saint Bernard Les Moulins I, F-06220 Vallauris (France)

    2007-12-11

    Variations of the photoluminescence spectra and photoconductivity transients with proton and neutron fluence in the semi-insulating GaN-layered structures of different thickness are examined. It has been obtained that the intensity of the photoluminescence bands associated with grown-in defects of the semi-insulating GaN layers decreases non-linearly with irradiation of high-energy proton and neutron fluence in the range of 10{sup 14}-10{sup 16} cm{sup -2}. The recombination and trapping lifetimes also exhibit a significant decrease with fluence which is most prominent in thin epilayers. Defect parameters determined from lifetime variations with temperature and from the relative changes of the photoluminescence bands are discussed.

  20. Spectroscopic performance of semi-insulating GaAs detectors for digital radiography

    International Nuclear Information System (INIS)

    We studied pixel radiation detectors for X-ray radiography based on semi-insulating GaAs: in particular, we investigated both annealed and non-annealed contact deposition techniques for the ohmic contact and both ring-guarded and non-guarded Schottky contact, in order to reduce the leakage current and to increase the maximum applied electric field. Spectroscopic characterization with a 60 keV 241 Am source has been performed. Among these different detectors, the CCE can reach 99±6%, while the energy resolution ΔE/E can go down to 4.1±0.2%

  1. Growth and properties of InP single crystals

    Science.gov (United States)

    Dun-fu, Fang; Xiang-xi, Wang; Yong-quan, Xu; Li-tong, Tan

    1984-04-01

    InP single crystals with various dopants including S, Sn, Zn and Fe have been grown successfully by the Czochralski method under high pressure with liquid encapsulation. It is found that by carefully adjusting the thermal symmetry of the heating field and by further improving the quality of the polycrystals and by dehydrating B 2O 3, twin-free InP crystals can be obtained even with a shoulder angle of up to 54°, and defects caused by thermal decomposition appear on the surface of the crystals during pulling. Furthermore, a comparison of the crystal perfection and uniformity between S-doped and Sn-doped InP crystals shows that the quality of the former is better than that of the latter. Dislocation-free Zn-doped p-InP single crystals without precipitates have also been easily obtained when the carrier concentration is greater than 2×10 18 cm -3 and the diameter less than 30 mm. By controlling the iron content, semi-insulating thermally stable single crystals of InP doped with ⩽0.03 wt% of Fe without precipitates and with a homogeneous resistivity can be produced.

  2. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    International Nuclear Information System (INIS)

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch. (semiconductor devices)

  3. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Institute of Scientific and Technical Information of China (English)

    Ma Xiangrong; Shi Wei; Ji Weili; Xue Hong

    2011-01-01

    A 4 mm gap semi-insulating(SI)GaAs photoconductive switch(PCSS)was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ.In the experiment,when the bias field was 4 kV,the switch did not induce self-maintained discharge but worked in nonlinear(lock-on)mode.The phenomenon is analyzed as follows:an exciton effect contributes to photoconduction in the generation and dissociation of excitons.Collision ionization,avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed.Under the combined influence of these factors,the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status.The characteristics of the filament affect the degree of damage to the switch.

  4. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Science.gov (United States)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  5. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2002-01-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  6. Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS. Application to the effect of hydrogen in CdTe

    Science.gov (United States)

    Hage-Ali, M.; Yaacoub, B.; Mergui, S.; Samimi, M.; Biglari, B.; Siffert, P.

    1991-06-01

    Thermally stimulated current (TSC) and photo-induced current transient spectroscopy (PICTS) methods have been developed for the microscopic defect characterization in semi-insulating compound semiconductors. The capabilities of these methods are demonstrated by investigating the effects of hydrogen implantation or diffusion into semi-insulating cadmium telluride.

  7. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)

    R Srinivasan; K Ramachandran

    2008-11-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles.

  8. Effect of As Interstitial Diffusionon on the Properties of Undoped Semi-insulating LECGaAs

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Annealing was carried out at 950 and 1120 ℃ under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 ℃ for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect El2 (AsGaVGa ) can be decreased by about one order of magnitude by an evacuated annealing at 1120 ℃ for 2€? h followed by a fast cooling. The decrease in El2 concentration can also be suppressed by increasing the As pressure during annealing.

  9. Influence of substrate on the performances of semi-insulating GaAs detectors

    CERN Document Server

    Baldini, R; Nava, F; Canali, C; Lanzieri, C

    2000-01-01

    A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

  10. High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs

    CERN Document Server

    da Silva, S L; de Oliveira, A G; Ribeiro, G M; da Silva, R L

    2014-01-01

    Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structu...

  11. High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope

    Science.gov (United States)

    Marek, J.; Elliot, A. G.; Wilke, V.; Geiss, R.

    1986-12-01

    Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.

  12. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

    Institute of Scientific and Technical Information of China (English)

    HOU Qi-Feng; WANG Xiao-Liang; XIAO Hong-Ling; WANG Cui-Mei; YANG Cui-Bai; YIN Hai-Bo; LI Jin-Min; WANG Zhan-Guo

    2011-01-01

    Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate.It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

  13. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

    Science.gov (United States)

    Hou, Qi-Feng; Wang, Xiao-Liang; Xiao, Hong-Ling; Wang, Cui-Mei; Yang, Cui-Bai; Yin, Hai-Bo; Li, Jin-Min; Wang, Zhan-Guo

    2011-03-01

    Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35 eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

  14. Response of semi-insulating GaAs detectors to low energy protons

    International Nuclear Information System (INIS)

    The performance of semi-insulating GaAs detectors, grown with the LEC technique, has been studied by irradiating the Schottky diodes with 2 and 2.4 MeV monoenergetic protons in a pencil beam with sub-millimeter width (70 or 600 μm). The beam was moved across the surface of the front (Schottky) contact, in order to investigate the uniformity of the detection characteristics over the sensitive area of the diodes, and to study the electric field behavior around the Schottky contact. For each scanning position, a pulse-height spectrum was measured. Then, the charge collected and the energy resolution were obtained as a function of the irradiation position both on the contact and outside it. The data show that - the best spectroscopic response occurs for the beam with 70 μm width,; - when the beam is incident onto the contact, the energy resolution is between 1% and 5%, and the variation of the charge collected, for different irradiation position, is less than 30%,; - when the beam is incident onto the border of the contact (substrate is irradiated), the spectrum is degraded and no clear peak is present,; - collection of charge still occurs at distances up to about 500 μm from the border of the Schottky contact (for a pixel size of 200 μm), or up to about 200 μm (for a pixel diameter of 3 mm),; - saturation of the curve collected charge vs. reverse bias voltage occurs at about 100 V for both 2 MeV (range=32 μm) and 2.4 MeV protons (range=41 μm)

  15. Semiclassical three-valley Monte Carlo simulation analysis of steady-state and transient electron transport within bulk InAsxP1-x, InAs and InP

    Directory of Open Access Journals (Sweden)

    Hadi Arabshahi

    2010-04-01

    Full Text Available We have studied how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk zincblende InAsxP1-x, InAs and InP. Calculations are made using a non-parabolic effective-mass energy band model. Monte Carlo simulation includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimised pseudo-potential band calculations to ensure excellent agreement with experimental information and ab-initio band models. The effects of alloy scattering on the electron transport physics are examined. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field-effect transistor. The electron drift velocity relaxes to the saturation value of about 1.5105 ms-1 within 4 pico-seconds for all crystal structures. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

  16. When is an INP not an INP?

    Science.gov (United States)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  17. Semi-insulating GaAs detectors with HDPE layer for detection of fast neutrons from D-T nuclear reaction

    Science.gov (United States)

    Sagatova, Andrea; Zatko, Bohumir; Sedlackova, Katarina; Pavlovic, Marius; Necas, Vladimir; Fulop, Marko; Solar, Michael; Granja, Carlos

    2016-09-01

    Bulk semi-insulating (SI) GaAs detectors optimized for fast-neutron detection were examined using mono-energetic neutrons. The detectors have an active area of 7.36 mm2 defined by a multi-pixel structure of a AuZn Schottky contact allowing a relatively high breakdown voltage (300 V) sufficient for full depletion of the detector structure. The Schottky contact is covered by a HDPE (high density polyethylene) conversion layer, where neutrons transfer their kinetic energy to hydrogen atoms through elastic nuclear collisions. The detectors were exposed to mono-energetic neutrons generated by a deuterium (D)-tritium (T) nuclear reaction at a Van de Graaff accelerator. Neutrons reached a kinetic energy of 16.8 MeV when deuterons were accelerated by 1 MV potential. The influence of the HDPE layer thickness on the detection efficiency of the fast neutrons was studied. The thickness of the conversion layer varied from 50 μm to 1300 μm. The increase of the HDPE layer thickness led to a higher detection efficiency due to higher conversion efficiency of the HDPE layer. The effect of the active detector thickness modified by the detector reverse bias voltage on the detection efficiency was also evaluated. By increasing the detector reverse voltage, the detector active volume expands to the depth and also to the sides, slightly increasing the neutron detection efficiency.

  18. Growth of Semi-Insulating GaN by Using Two-Step A1N Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhong-Tang; QUO Li-Wei; XING Zhi-Gang; DING Guo-Jian; ZHANG Jie; PENG Ming-Zeng; JIA Hai-Qiang; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 1013 Ω/sq by using two-step A1N buffer instead of the traditional low-temperature GaN buffer. The high sheet resistance of as-grown GaN over 10 Ωfi/sq is due to inserting an insulating buffer layer (two-step A1N buffer) between the high-temperature GaN layer and a sapphire substrate which blocks diffusion of oxygen and overcomes the weakness of generating high density carrier near interface of GaN and sapphire when a low-temperature GaN buffer is used. The result suggests that the high conductive feature of unintentionally doped GaN is mainly contributed from the highly conductive channel near interface between GaN and the sapphire substrate, which is indirectly manifested by room-temperature photoluminescence excited by an incident laser beam radiating on growth surface and on the substrate. The functions of the two-step A1N buffer layer in reducing screw dislocation and improving crystal quality of GaN are also discussed.

  19. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

    International Nuclear Information System (INIS)

    The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements

  20. Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating substrates

    Institute of Scientific and Technical Information of China (English)

    Chen Cang; Bai Song; Li Zhe-Yang; Wu Peng; Chen Zheng; Han Pin

    2009-01-01

    In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors(MESFETs)on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 μm gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave(CW)at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency(f_T)and the maximum frequency(f_(max))are 9 GHz and 24.9 GHz respectively. The simulation results of f_T and f_(max) are 11.4 GHz and 38.6 GHZ respectively.

  1. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    Science.gov (United States)

    Luan, Chongbiao; Wang, Bo; Huang, Yupeng; Li, Xiqin; Li, Hongtao; Xiao, Jinshui

    2016-05-01

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  2. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    Directory of Open Access Journals (Sweden)

    Chongbiao Luan

    2016-05-01

    Full Text Available A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  3. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystals

    Science.gov (United States)

    Kostina, S. S.; Peters, J. A.; Lin, W.; Chen, P.; Liu, Z.; Wang, P. L.; Kanatzidis, M. G.; Wessels, B. W.

    2016-06-01

    Photoluminescence (PL) properties of semi-insulating Tl6SeI4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Since inhomogeneous line broadening and PL fatigue are related to the concentration of defects or impurities, the measurement of these two parameters is an effective method to screen sample quality.

  4. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystals

    International Nuclear Information System (INIS)

    Photoluminescence (PL) properties of semi-insulating Tl6SeI4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Since inhomogeneous line broadening and PL fatigue are related to the concentration of defects or impurities, the measurement of these two parameters is an effective method to screen sample quality. (paper)

  5. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    International Nuclear Information System (INIS)

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III–V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage. (semiconductor devices)

  6. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  7. Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

    Energy Technology Data Exchange (ETDEWEB)

    Koc, Emrah; Karakoese, Sema [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Salamov, Bahtiyar G. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Institute of Physics, National Academy of Science, 1143 Baku (Azerbaijan)

    2013-09-15

    This study focuses on analyses of secondary electron emission (SEE) at semiconductor surfaces when the sufficient conditions of space-time distribution occur. Experimental measurements and calculations with the approach of Townsend coefficients, which include the evaluations of ionization coefficient ({alpha}) and SEE coefficient ({gamma}) were performed in high-ohmic InP, GaAs, and Si semiconductor cathodes with argon and air environments in a wide range of E/N (300-10 000 Td). The direct calculations of {gamma} were carried out to determine the behavior of cold-semiconductor cathode current in a wide range of microgaps (45-525 {mu}m). Paschen curves are interpreted in the dependence of large pd range on breakdown voltage through {gamma} and {alpha}/N. Ion-induced secondary electrons exhibit the direct behaviors affecting the timescale of breakdown evolution in the vicinity of the Paschen minimum during the natural bombardment process with ions of semiconductor cathodes. Also, when {alpha}/N rapidly drops and the excitations of gas atoms densely occupy the gas volume, we determined that the photoelectric effect provides a growth for electron emission from semiconductor surfaces at the breakdown stage at the reduced values of E/N. At all pressures, the emission magnitudes of electrons liberated by semiconductor cathodes into vacuum are found as {gamma}{sub InP} > {gamma}{sub GaAs} > {gamma}{sub Si} in breakdown evolution. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. On the detection performance of semi-insulating GaAs detectors coupled to multichannel ASIC DX64 for X-ray imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Zat' ko, Bohumir [Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, SK-841 04 Bratislava (Slovakia)], E-mail: elekbzat@savba.sk; Dubecky, Frantisek [Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, SK-841 04 Bratislava (Slovakia); Scepko, Pavol [T and N System, Ltd., Severna 5, SK-974 01 Banska Bystrica (Slovakia); Grybos, Pawel [Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, PL-30 059 Krakow (Poland); Mudron, Jan [MTC, a. s., Kuzmanyho 11, SK-031 01 Liptovsky Mikulas (Slovakia); Maj, Piotr; Szczygiel, Robert [Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, PL-30 059 Krakow (Poland); Frollo, Ivan [Institute of Measurement Science, Slovak Academy of Sciences, Dubravska cesta 9, SK-841 04 Bratislava (Slovakia)

    2008-06-11

    Detectors based on semi-insulating (SI) GaAs show high detection efficiency and satisfactory energy resolution for modern X-ray digital imaging applications. This work deals with the performance of SI GaAs-based detectors coupled by wire bonding to the input of multichannel readout chip DX64 (technology CMOS 0.35 {mu}m). Detectors have circular Ti/Pt/Au multilayer Schottky blocking contacts with different diameters (0.75, 0.50, 0.30 and 0.20 mm). First results of operation of the used readout system in the single-photon counting regime are given.

  9. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  10. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    Science.gov (United States)

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  11. The X-ray response of InP

    Energy Technology Data Exchange (ETDEWEB)

    Owens, Alan E-mail: aowens@astro.estec.esa.nl; Bavdaz, M.; Gostilo, V.; Gryaznov, D.; Loupilov, A.; Peacock, A.; Sipila, H

    2002-07-21

    We present the results of X-ray measurements on a prototype InP detector. The device was fabricated from Fe-doped bulk material of size 3x3x0.18 mm{sup 3}. X-ray measurements have been carried out using a number of radioactive and fluorescent target sources. The detector energy response function was found to be linear over the energy range 5.9-88 keV with an average rms non-linearity of 0.7%, consistent with statistics. At a detector temperature of -60 deg. C, the FWHM energy resolution under full-area illumination was 2.5 at 5.9 keV rising to 12 at 88 keV. Analysis of the energy resolution function indicates that poor charge transport presently limits the performance of InP detectors.

  12. The X-ray response of InP

    International Nuclear Information System (INIS)

    We present the results of X-ray measurements on a prototype InP detector. The device was fabricated from Fe-doped bulk material of size 3x3x0.18 mm3. X-ray measurements have been carried out using a number of radioactive and fluorescent target sources. The detector energy response function was found to be linear over the energy range 5.9-88 keV with an average rms non-linearity of 0.7%, consistent with statistics. At a detector temperature of -60 deg. C, the FWHM energy resolution under full-area illumination was 2.5 at 5.9 keV rising to 12 at 88 keV. Analysis of the energy resolution function indicates that poor charge transport presently limits the performance of InP detectors

  13. Development of InP solid state detector and liquid scintillator containing metal complex for measurement of pp/7Be solar neutrinos and neutrinoless double beta decay

    Science.gov (United States)

    Fukuda, Yoshiyuki; Moriyama, Shigetaka

    2012-07-01

    A large volume solid state detector using a semi-insulating Indium Phosphide (InP) wafer have been developed for measurement of pp/7Be solar neutrinos. Basic performance such as the charge collection efficiency and the energy resolution were measured by 60% and 20%, respectively. In order to detect two gammas (115keV and 497keV) from neutrino capture, we have designed hybrid detector which consist InP detector and liquid xenon scintillator for IPNOS experiment. New InP detector with thin electrode (Cr 50Å- Au 50Å). For another possibility, an organic liquid scintillator containing indium complex and zirconium complex were studied for a measurement of low energy solar neutrinos and neutrinosless double beta decay, respectively. Benzonitrile was chosen as a solvent because of good solubility for the quinolinolato complexes (2 wt%) and of good light yield for the scintillation induced by gamma-ray irradiation. The photo-luminescence emission spectra of InQ3 and ZrQ4 in benzonitrile was measured and liquid scintillator cocktail using InQ3 and ZrQ4 (50mg) in benzonitrile solutions (20 mL) with secondary scintillators with PPO (100mg) and POPOP (10mg) was made. The energy spectra of incident gammas were measured, and they are first results of the gamma-ray energy spectra using luminescent of metal complexes.

  14. Preparation and optical properties of composite thin films with embedded InP nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    InP nanoparticles embedded in SiO2 thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The aver-age size of InP nanoparticles is in the range of 3-10 nm. The broadening and red shift of the Raman peaks were observed,which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the optical absorp-tion edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum con-finement effect. The theoretical values of the blue shift pre-dicted by the effective mass approximation model are differ-ent from the experimental results for the InP-SiO2 system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not constant and is inverse relative to the particles radius,which may be the main reason that results in the discrepancy between the theoretical and the experi-mental result. We discussed the possible transition of the direct band gap to the indirect band gap for InP nanoparti-cles embedded in SiO2 thin films.

  15. An analysis of the shape of a luminescence band induced by free electron-to-carbon atom transitions in semi-insulating undoped GaAs crystals

    CERN Document Server

    Glinchuk, K D; Prokhorovich, A V; Strilchuk, O N

    2001-01-01

    The shape of a photoluminescence (band observed due to recombination of free electrons on carbon atoms) in semi-insulating undoped GaAs crystals is analyzed at different temperatures (T=4.8 to 77 K). It is shown that at low temperatures the shape essentially differs from the theoretical one while at high temperatures is very close to it for radiative transitions of free electrons to isolated shallow acceptors. The observed difference of the experimental and theoretical shapes of the photoluminescence band is connected with the broadening of carbon-induced acceptor levels, resulting from the influence of electric fields of randomly distributed ionized acceptors and donors on isolated carbon atoms. Coincidence of the shapes is connected with a considerable in the energy of free carriers

  16. Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs

    Science.gov (United States)

    Sharma, T. K.; Kumar, Shailendra; Rustagi, K. C.

    2002-11-01

    Surface photovoltage spectroscopy studies on thick semi-insulating GaAs wafers are reported in the range 850-950 nm using the chopped light geometry. We observed some interesting sharp features in the sub-band-gap of SI-GaAs, which were reported recently [Appl. Phys. Lett. 79, 1715(2001); Rev. Sci. Instrum. 73, 1835 (2002)]. In this article, we present the dependence of these features on the chopping frequency and the source intensity. The intensity variation in the above-band-gap region and for the A peak (898 nm) in the sub-band-gap region could be fitted with single component while it is necessary to consider more than one component to fit the data for the Q peak (887 nm) in the sub-band-gap region. A model consistent with the observed features is also proposed.

  17. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    International Nuclear Information System (INIS)

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm

  18. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment

    CERN Document Server

    Ivanco, J; Darmo, J; Krempasky, M; Besse, I; Senderak, R

    1999-01-01

    It is generally agreed that the substrate material quality plays a key role in the performance of back-to-back detectors of ionising radiation based on semi-insulating (SI) material. The aim of this paper is to evaluate usually overlooked problem, namely the influence of the Schottky contact preparation on detector performance. We report on different approaches to modify and control the quality of the metal/SI GaAs interface via a treatment of the SI-GaAs surface by means of low-temperature hydrogen plasma and wet etching. The measured electrical and detecting properties of such structures display a strong dependence on the history and the way the GaAs surface is treated prior to the metal evaporation. We point out, therefore, that the semiconductor surface treatment before the Schottky metallization plays a role of comparable importance to the influence of the SI-GaAs substrate properties on detector performances. (author)

  19. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  20. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Science.gov (United States)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.

    2015-07-01

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  1. Studies on semiconductors based on InP with sub-ps response times

    International Nuclear Information System (INIS)

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 μm (1.55 μm) were successfully achieved in MQW (coupled QW) structures. (orig.)

  2. The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

    Science.gov (United States)

    Zatko, B.; Sagatova, A.; Bohacek, P.; Sedlackova, K.; Sekacová, M.; Arbet, J.; Necas, V.

    2016-01-01

    In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 μm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates.

  3. Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhong-Tang; XING Zhi-Gang; GUO Li-Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    Semi-insulating (SI) GaN is grown using N2 as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using H2 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 104Ω/sq to 10Ω Q/sq by changing the NL carrier gas from H2 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the film are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using H2 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the film roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN significantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.

  4. The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

    International Nuclear Information System (INIS)

    100 keV hydrogen ion implantation has been carried out on undoped semi-insulating (1 0 0) gallium arsenide single crystals for various ion doses at room temperature. The structural properties due to high dose, low energy hydrogen ion implantation has been investigated using X-ray double crystal diffractometry (DCD) analysis, Rutherford backscattering spectrometry and channeling (RBS/C) experiments and transmission electron microscopy (TEM) analysis. By using DCD analysis, the value of elastic lattice strain for the ion doses of 1x1016, 1x1018 ions/cm2 has been estimated to be 2.1x10-3 and 3.2x10-3, respectively. The RBS spectra in the channeling mode for the high dose implantations (1017 and 1018 ions/cm2) show a high yield indicating a highly damaged region near the range of the implanted hydrogen ions. Particularly, for the dose 1018 ions/cm2, a heavily damaged region at the surface can be observed. The TEM results evidenced that no amorphization occurred for the dose 1018 ions/cm2. From TEM characterisation, it is also observed that there are no hydrogen bubbles present in the implanted region. But small dislocation loops have been identified. The projected range of implanted hydrogen ions and the thickness of the implanted layer obtained by RBS and TEM analysis are compared with the TRIM calculations. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  5. The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Udhayasankar, M.; Kumar, J.; Ramasamy, P. [Crystal Growth Centre, Anna University, Chennai (India); Sekar, K.; Sundaravel, B. [Institute of Physics, Sachivalaya, Marg, Bhubaneswar (India); Ferrari, C.; Lazzarini, L. [MASPEC-CNR, Via Chiavari 18/A, 43100 Parma (Italy); Magudapathy, P.; Nair, K.G.M. [Materials Science Division, IGCAR, Kalpakkam (India)

    1999-03-01

    100 keV hydrogen ion implantation has been carried out on undoped semi-insulating (1 0 0) gallium arsenide single crystals for various ion doses at room temperature. The structural properties due to high dose, low energy hydrogen ion implantation has been investigated using X-ray double crystal diffractometry (DCD) analysis, Rutherford backscattering spectrometry and channeling (RBS/C) experiments and transmission electron microscopy (TEM) analysis. By using DCD analysis, the value of elastic lattice strain for the ion doses of 1x10{sup 16}, 1x10{sup 18} ions/cm{sup 2} has been estimated to be 2.1x10{sup -3} and 3.2x10{sup -3}, respectively. The RBS spectra in the channeling mode for the high dose implantations (10{sup 17} and 10{sup 18} ions/cm{sup 2}) show a high yield indicating a highly damaged region near the range of the implanted hydrogen ions. Particularly, for the dose 10{sup 18} ions/cm{sup 2}, a heavily damaged region at the surface can be observed. The TEM results evidenced that no amorphization occurred for the dose 10{sup 18} ions/cm{sup 2}. From TEM characterisation, it is also observed that there are no hydrogen bubbles present in the implanted region. But small dislocation loops have been identified. The projected range of implanted hydrogen ions and the thickness of the implanted layer obtained by RBS and TEM analysis are compared with the TRIM calculations. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  6. 退火处理后非掺磷化铟的电传输特性%Electrical Transport Properties of Annealed Undoped InP

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage(I-V)measurements for semiconducting and semi-insulating samples,respectively.Defect band conduction in annealed semiconducting InP can be observed from TDH measurement,which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation.The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown.Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.%利用变温霍尔和电流-电压特性(I-V)两种方法分别对半导体和半绝缘的退火非掺磷化铟材料进行了测量.在非掺退火后的半导体磷化铟样品中可以测到缺陷带电导,这与自由电子浓度较低、有一定补偿度的原生非掺磷化铟的情况类似.非掺SI-InP表现出不同于原生掺铁的SI-InP的I-V特性,在一直到击穿为止的外加电场范围内呈欧姆特性,而掺铁SI-InP的I-V具有与陷阱填充有关非线性特征.根据空间电荷限制电流的理论,这种现象可以解释为非掺SI-InP中没有未被电子占据的空的深能级缺陷.

  7. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  8. Comparison of Steady-State and Transient Electron Transport in InAs, InP and GaAs

    Science.gov (United States)

    Arabshahi, H.; Khalvati, M. R.; Rokn-Abadi, M. Rezaee

    An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 400 kVm-1 for the case of GaAs, 300 kVm-1 for InAs and 700 kVm-1 for InP. We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm GaAs sample to be a bout 3 ps. Similar calculations for InAs and InP yield 2.2 and 5 ps, respectively. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

  9. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P. D.; Chung, Choong-Heui

    2016-04-01

    We report the growth of vertical -oriented InAs x P1- x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1- x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

  10. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    Energy Technology Data Exchange (ETDEWEB)

    Salman, S. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Folliot, H., E-mail: herve.folliot@insa-rennes.fr [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoeen, C.; Bertru, N. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Labbe, C. [CIMAP, CEA/UMR CNRS 6252/ENSICAEN/Universite de Caen Basse Normandie, 6, Boulevard Marechal Juin, 14050 Caen Cedex 4 (France); Letoublon, A.; Le Corre, A. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. Black-Right-Pointing-Pointer The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. Black-Right-Pointing-Pointer New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3{omega} method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3{omega} method in the 20-200 Degree-Sign C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  11. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

    2016-12-01

    We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix. PMID:27094822

  12. High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

    Science.gov (United States)

    Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

    2014-06-11

    The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency. PMID:24841253

  13. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  14. Quantum size effects in InP inner film fiber

    Institute of Scientific and Technical Information of China (English)

    WANG Ting-yun; WANG Ke-xin; LU Jun

    2005-01-01

    Based on the semiconductor amplifiing properties and the structure of optical fiber wave guide an InP inner fiber is developed.The InP inner film fiber can be employed as a small size,broadband,and ultra-short fiber amplifier.The quantum size effects of the fiber are emphatically investigated in the work.Using the experimental data,we compare the effective mass approximation (EMA) with effective parameterization within the tight binding (EPTB) models for the accurate description of the quantum size effects in InP.The results show that the EPTB model provides an excellent description of band gap variation over a wide range of sizes.The Bohr diameter and the effective Rydberg energy of InP are calculated.Finally,the amplifiing properties of the InP inner film fiber are discussed due to the quantum size effects.

  15. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, InP based compound...

  16. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase II SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, high radiation resistance InP...

  17. Response of semi-insulating 100{mu}m thick GaAs detector for {alpha}-particles, {gamma}-rays and X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Kordyasz, A.J. [Heavy Ion Laboratory, Warsaw University, ul. Pasteura 5a, 02-093 Warsaw (Poland)]. E-mail: kord@slcj.uw.edu.pl; Strzelecka, S.G. [Institute of Electronic Materials Technology, Warsaw (Poland); Kownacki, J. [Heavy Ion Laboratory, Warsaw University, ul. Pasteura 5a, 02-093 Warsaw (Poland); Dobrzanski, L. [Institute of Electronic Materials Technology, Warsaw (Poland); Hruban, A. [Institute of Electronic Materials Technology, Warsaw (Poland); OrIowski, W. [Institute of Electronic Materials Technology, Warsaw (Poland); Wegner, E. [Institute of Electronic Materials Technology, Warsaw (Poland); Reissig, L. [Center for Inter-Faculty Individual Studies in Mathematical and Natural Sciences, University of Warsaw, Warsaw (Poland)]. E-mail: louisa@slcj.uw.edu.pl

    2005-06-21

    The 100{mu}m thick, transmission, fully depleted GaAs Schottky barrier detector fabricated from LEC bulk GaAs crystals has been tested. The basic structure of the detector consists of a Cr/Au Schottky contact and an Au/Ge/Ni/Au alloyed ohmic contact. Pulse height spectra for {alpha}-particles resulting from irradiation with triple source {sup 239}Pu, {sup 241}Am, {sup 244}Cm, with energies 5.155, 5.486, 5.805MeV were acquired. The energy resolution for these energies was better than 10keV (1.8%). Using {sup 241}Am 5.486MeV {alpha}-particles a charge collection efficiency (CCE) of about 94% was obtained at 570V bias potential. The spectra of low-energy {gamma}-rays 59.5keV and X-rays with average energy 16.2keV from {sup 241}Am source measured at room temperature are presented. An energy resolution of about 6.1keV (10.3%) FWHM at 59.5keV was obtained.

  18. Response of semi-insulating 100μm thick GaAs detector for α-particles, γ-rays and X-rays

    International Nuclear Information System (INIS)

    The 100μm thick, transmission, fully depleted GaAs Schottky barrier detector fabricated from LEC bulk GaAs crystals has been tested. The basic structure of the detector consists of a Cr/Au Schottky contact and an Au/Ge/Ni/Au alloyed ohmic contact. Pulse height spectra for α-particles resulting from irradiation with triple source 239Pu, 241Am, 244Cm, with energies 5.155, 5.486, 5.805MeV were acquired. The energy resolution for these energies was better than 10keV (1.8%). Using 241Am 5.486MeV α-particles a charge collection efficiency (CCE) of about 94% was obtained at 570V bias potential. The spectra of low-energy γ-rays 59.5keV and X-rays with average energy 16.2keV from 241Am source measured at room temperature are presented. An energy resolution of about 6.1keV (10.3%) FWHM at 59.5keV was obtained

  19. Deep level defects in high temperature annealed InP

    Institute of Scientific and Technical Information of China (English)

    DONG; Zhiyuan; ZHAO; Youwen; ZENG; Yiping; DUAN; Manlong

    2004-01-01

    Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed iniron phosphide ambient,while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

  20. Long-Term INP Measurements within the BACCHUS project

    Science.gov (United States)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  1. Electron guns and collectors developed at INP for electron cooling devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharapa, A.N.; Shemyakin, A.V. [Institute of Nuclear Physics, Novosibirsk (Russian Federation)

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  2. InP concentrator solar cells for space applications

    Science.gov (United States)

    Ward, J. S.; Wanlass, M. W.; Coutts, T. J.; Emery, K. A.

    1991-01-01

    The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined.

  3. Nanophotonic resonators for InP solar cells.

    Science.gov (United States)

    Goldman, Daniel A; Murray, Joseph; Munday, Jeremy N

    2016-05-16

    We describe high efficiency thin-film InP solar cells that utilize a periodic array of TiO2 nanocylinders. These nanophotonic resonators are found to reduce the solar-weighted average reflectivity of an InP solar cell to ~1.3%, outperforming the best double-layer antireflection coatings. The coupling between Mie scattering resonances and thin-film interference effects accurately describes the optical enhancement provided by the nanocylinders. The spectrally resolved reflectivity and J-V characteristics of the device under AM1.5G illumination are determined via coupled optical and electrical simulations, resulting in a predicted power conversion efficiency > 23%. We conclude that the nanostructured coating reduces reflection without negatively affecting the electronic properties of the InP solar cell by separating the nanostructured optical components from the active layer of the device. PMID:27409965

  4. Particle detectors based on semiconducting InP epitaxial layers

    OpenAIRE

    Yatskiv, R. (Roman); Grym, J.; Žďánský, K. (Karel)

    2011-01-01

    In this work, we present study of electrical properties and detection performance of two types of InP detector structures: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type ...

  5. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  6. 1990's annual report of INPE's Plasma Associated Laboratory

    International Nuclear Information System (INIS)

    This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

  7. 2D InP photonic crystal fabrication process development

    NARCIS (Netherlands)

    Rong, B.; Van der Drift, E.; Van der Heijden, R.W.; Salemink, H.W.M.

    2006-01-01

    We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectri

  8. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  9. c-Myc inhibits TP53INP1 expression via promoter methylation in esophageal carcinoma

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Wenhao; Yang, Qinyuan [Department of Laboratory Medicine, Shanghai Tenth People' s Hospital, Tongji University School of Medicine, Shanghai 200072 (China); Huang, Miaolong [Department of Thoracic Surgery, Yuebei People' s Hospital, Shaoguan, Guangdong 512026 (China); Qiao, Yongxia [Department of Preventive Medicine, Tongji University, Shanghai City 200092 (China); Xie, Yuan; Yu, Yongchun [Department of Laboratory Medicine, Shanghai Tenth People' s Hospital, Tongji University School of Medicine, Shanghai 200072 (China); Jing, An, E-mail: Anjing77@gmail.com [Department of Thoracic Surgery, Yuebei People' s Hospital, Shaoguan, Guangdong 512026 (China); Institute of Cancer Research, Southern Medical University, Guangzhou 510515 (China); Li, Zhi, E-mail: lizhiweng2010@163.com [Department of Laboratory Medicine, Shanghai Tenth People' s Hospital, Tongji University School of Medicine, Shanghai 200072 (China)

    2011-02-11

    Research highlights: {yields} TP53INP1 expression is down-regulated in esophageal carcinoma and is associated with CGI-131 methylation. {yields} Inhibition of CGI-131 methylation upregulates TP53INP1 expression in ESCC cell lines. {yields} Ectopic expression of TP53INP1 inhibits growth of ESCC cells by inducing apoptosis and inhibiting cell cycle progression. {yields} c-Myc binds to the promoter of TP53INP1 in vivo and vitro and recruits DNMT3A to TP53INP1 promoter for CGI-131 methylation. -- Abstract: Tumor protein p53-induced nuclear protein 1 (TP53INP1) is a well known stress-induced protein that plays a role in both cell cycle arrest and p53-mediated apoptosis. Loss of TP53INP1 expression has been reported in human melanoma, breast carcinoma, and gastric cancer. However, TP53INP1 expression and its regulatory mechanism in esophageal squamous cell carcinoma (ESCC) remain unclear. Our findings are in agreement with previous reports in that the expression of TP53INP1 was downregulated in 28% (10/36 cases) of ESCC lesions, and this was accompanied by significant promoter methylation. Overexpression of TP53INP1 induced G1 cell cycle arrest and increased apoptosis in ESCC cell lines (EC-1, EC-109, EC-9706). Furthermore, our study showed that the oncoprotein c-Myc bound to the core promoter of TP53INP1 and recruited DNA methyltransferase 3A to methylate the local promoter region, leading to the inhibition of TP53INP1 expression. Our findings revealed that TP53INP1 is a tumor suppressor in ESCC and that c-Myc-mediated DNA methylation-associated silencing of TP53INP1 contributed to the pathogenesis of human ESCC.

  10. Annealing effect on InP vertical porous arrays

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    InP vertical porous arrays were produced using electrochemical etching at room temperature.The as-etched InP samples were annealed in an ultra high vacuum camber.Cross-sectional analysis of the porous layer was conducted using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX).Annealing in vacuum was found to meliorate the structural quality of the porous layer.EDX results showed the composition change of the porous InP.By controlling the annealing process parameters,the content ratio of phosphorus (P) to indium (In) is tuneable.Raman property of the samples was also investigated at room temperature.Compared with the sample without annealing treatment,Raman spectrum from the annealed sample showed red-shifted LO and TO peaks together with sharpened LO peak and shortened TO peak.

  11. Azimuthally polarized cathodoluminescence from InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Brenny, B. J. M.; Osorio, C. I.; Polman, A., E-mail: polman@amolf.nl [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Dam, D. van [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Gómez Rivas, J. [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); FOM Institute DIFFER, P.O. Box 6336, 5600 HH Eindhoven (Netherlands)

    2015-11-16

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  12. A single crystalline InP nanowire photodetector

    Science.gov (United States)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  13. Simulation of INPE's printed circuit laboratory production line

    Science.gov (United States)

    Torgogomes, Arthur

    1988-05-01

    The development of a tool intended to improve, plan, monitor, and control INPE's Printed Circuit Laboratory Production Line is presented. A manipulatable computer model was developed. The model simulates the behavior of the production line elements, when established demand is given. A discrete simulation model of stochastic nature was created departing from study and comprehension of technical and operational characteristics. The system was modeled encompassing physical and chronological dimensions. The computer model utilizes the GASP 4 language simulation. The source program for this language was worked out to make possible such an application. The model was tested and proved operational in a 6800 Burroughs computer. The major significant results that the model provides information on necessary time between an order placed with the Laboratory and the final product ready for delivery to the client; also statistics of waiting time elapsed and starting time for production. Currently, this program is operational. It is being successfully utilized by INPE's Printed Laboratory Production Line.

  14. Defining capabilities of Si and InP photonics.

    Energy Technology Data Exchange (ETDEWEB)

    Vawter, Gregory Allen

    2010-05-01

    Monolithic photonic integrated circuits (PICs) have a long history reaching back more than 40 years. During that time, and particularly in the past 15 years, the technology has matured and the application space grown to span sophisticated tunable diode lasers, 40 Gb/s electrical-to-optical signal converters with complex data formats, wavelength multiplexors and routers, as well as chemical/biological sensors. Most of this activity has centered in recent years on optical circuits built on either Silicon or InP substrates. This talk will review the three classes of PIC and highlight the unique strengths, and weaknesses, of PICs based on Silicon and InP substrates. Examples will be provided from recent R&D activity.

  15. Indium and phosphorus vacancies and antisites in InP

    OpenAIRE

    Seitsonen, A. P.; Virkkunen, R.; Puska, Martti J.; Nieminen, Risto M.

    1994-01-01

    We present an extensive study of the structure and energetics of monovacancies and antisites in InP. Using a first-principles approach, the different charge states of indium and phosphorus vacancies and antisites are examined. The lattice distortions around the defects are derived fully self-consistently with respect to both electronic and ionic degrees of freedom. Jahn-Teller relaxations, defect-induced one-electron energy levels, and ionization potentials in the band gap are discussed. From...

  16. Quantum confinement of excitons in wurtzite InP nanowires

    Science.gov (United States)

    Pemasiri, K.; Jackson, H. E.; Smith, L. M.; Wong, B. M.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C.

    2015-05-01

    Exciton resonances are observed in photocurrent spectra of 80 nm wurtzite InP nanowire devices at low temperatures, which correspond to transitions between the A, B, and C valence bands and the lower conduction band. Photocurrent spectra for 30 nm WZ nanowires exhibit shifts of the exciton resonances to higher energy, which are consistent with finite element calculations of wavefunctions of the confined electrons and holes for the various bands.

  17. Bulk undercooling

    Science.gov (United States)

    Kattamis, T. Z.

    1984-01-01

    Bulk undercooling methods and procedures will first be reviewed. Measurement of various parameters which are necessary to understand the solidification mechanism during and after recalescence will be discussed. During recalescence of levitated, glass-encased large droplets (5 to 8 mm diam) high speed temperature sensing devices coupled with a rapid response oscilloscope are now being used at MIT to measure local thermal behavior in hypoeutectic and eutectic binary Ni-Sn alloys. Dendrite tip velocities were measured by various investigators using thermal sensors or high speed cinematography. The confirmation of the validity of solidification models of bulk-undercooled melts is made difficult by the fineness of the final microstructure, the ultra-rapid evolution of the solidifying system which makes measurements very awkward, and the continuous modification of the microstructure which formed during recalescence because of precipitation, remelting and rapid coarsening.

  18. [Characterizations of InP in terahertz region].

    Science.gov (United States)

    Zhang, Cai-Hong; Wang, Yuan-Yuan; Ma, Jin-Long; Jin, Biao-Bing; Xu, Wei-Wei; Kang, Lin; Chen, Jian; Wu, Pei-Heng

    2009-08-01

    Terahertz time-domain spectroscopy (THz-TDS), which directly measures the THz wave's temporal electric field, can give the amplitude and phase of the THz wave pulse simultaneously. THz-TDS is attracting more attention among scientists. InP with short carrier average collision time and low effective mass is growing up as one of the best photoconductive materials for emitting and detecting THz waves. An n-type InP of 0.35 omega x cm was characterized over the range from 0.2 to 4 THz at room temperature in the present paper with THz time-domain spectroscopy, which was placed in a closed box purged with dry nitrogen gas. Some THz optical properties, such as complex refractive index, dielectric constant, and conductivity, were extracted, based on more exact iterative method with new initial function. Drude model was also applied for simulation, which fitted well with the experimental results. Finally, the carrier average collision time, density and mobility of the InP were also characterized.

  19. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

    Directory of Open Access Journals (Sweden)

    Nikolett Sándor

    2015-10-01

    Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  20. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel;

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across the ...

  1. Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

    Directory of Open Access Journals (Sweden)

    Jeyran eShahbazi

    2013-05-01

    Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

  2. Particle detectors based on InP Schottky diodes

    International Nuclear Information System (INIS)

    A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed.

  3. Radiation material science at the INP AS RUz

    International Nuclear Information System (INIS)

    Among the critical technologies, determining the national priority of USA and Russia the first place is taken by manufacturing new materials. It means synthesis and production of materials for electronics (micro- and nano-) and photonics, ceramics and nano-ceramics, composites, metals and alloys with particular properties, super-hard materials, bio-compatible materials, catalysts and membranes. Radiation solid state physics gave birth of many radiation technologies for obtaining unique new or modified materials. In the table lists the experimental results recently obtained at the INP AS RUz. The studies are supported by grants of STCU and Uzbekistan Center of Science and Technology

  4. Lasers in InP generic photonic integration technology platforms

    Science.gov (United States)

    Latkowski, Sylwester; Lenstra, Daan

    2015-04-01

    A review is given of a number of lasers in a form of photonic integrated circuits realized on InP substrate using a generic integration approach. The potential of these photonic circuits lies in their compactness, low power consumption, and significant reduction of fabrication cost by realization in generic foundry runs. Generic integration platforms offer the possibility of realizing functionally advanced photonic circuits using combinations of just a few standardized and parameterized building blocks. This vibrant field opens new doors to innovative product development for SMEs as well as curiosity-driven research.

  5. Phosphorus vacancy in InP: A negative- U center

    OpenAIRE

    Alatalo, M.; Nieminen, Risto M.; Puska, Martti J.; Seitsonen, A. P.; Virkkunen, R.

    1993-01-01

    Using first-principles simulations, we identify the phosphorous vacancy in InP as a negative-U center. The deep levels associated with this defect are in the upper half of the band gap, and the charge state changes directly from positive to negative as the Fermi level is raised: the vacancy captures two electrons rather than one. We also obtain the relaxed structures and formation energies for the In and P vacancies as a function of both electron and atomic chemical potentials. Peer reviewed

  6. Electron irradiation effects in epitaxial InP solar cells

    Science.gov (United States)

    Pearsall, N. M.; Robson, N.; Sambell, A. J.; Anspaugh, B.; Cross, T. A.

    1991-01-01

    Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.

  7. Band Structure Modifications in Deformed InP Quantum Wires

    Directory of Open Access Journals (Sweden)

    V.V. Kuryliuk

    2014-11-01

    Full Text Available The work describes the features of the band structure of deformed InP nanowires with different diameters. It is shown that the bending of quantum wires is capable of creating local minima in the conduction and valence bands which are separated from the surface of the cylindrical wire. This result opens up new possibilities for controlling both the lifetime of photoexcited carriers by keeping them at these minima and the magnitude of the photovoltage in solar energy conversion devices based on quantum wires. The work lies within a common goal aiming to develop new methods of functionalization of nanostructured surfaces using mechanical deformations.

  8. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  9. Growth of polycrystalline InP thin films by the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are shown. X-ray diffraction shows that the stoichiometric InP films were face-centered cubic with preferred orientation of the crystallites over the (111) plane and mean grain size of about 60 nm. We also discuss the consequences of adverse growth conditions as bad vacuum and high substrate temperature on the film stoichiometry

  10. Growth of polycrystalline InP thin films by the pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Iribarren, A. [Instituto de Materiales y Reactivos, Universidad de La Habana, Zapata y G, Vedado, Plaza, Havana 10400 (Cuba)]. E-mail: augusto@fisica.uh.cu; Castro-Rodriguez, R. [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida Yucatan (Mexico); Ponce-Cabrera, L. [CICATA-IPN, Altamira, Km. 14.5 Carretera Tampico-Puerto Industrial, Altamira 89600, Tamps. (Mexico); Pena, J.L. [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida Yucatan (Mexico)

    2006-07-03

    The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are shown. X-ray diffraction shows that the stoichiometric InP films were face-centered cubic with preferred orientation of the crystallites over the (111) plane and mean grain size of about 60 nm. We also discuss the consequences of adverse growth conditions as bad vacuum and high substrate temperature on the film stoichiometry.

  11. Particle detectors based on semiconducting InP epitaxial layers

    Science.gov (United States)

    Yatskiv, R.; Grym, J.; Zdansky, K.

    2011-01-01

    A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature.

  12. Particle detectors based on semiconducting InP epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Yatskiv, R; Grym, J; Zdansky, K, E-mail: yatskiv@ufe.cz [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic)

    2011-01-15

    A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 10{sup 14} cm{sup -3} grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from {sup 241}Am source at room temperature.

  13. Particle detectors based on semiconducting InP epitaxial layers

    International Nuclear Information System (INIS)

    A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature.

  14. Study of discharge in the quiescent plasma machine of INPE

    International Nuclear Information System (INIS)

    Measurements of main plasma parameters produced in the quiescent plasma machine of INPE for several pressure and discharge potential values, and current of 500 m A are presented. The density varies form 108 cm-3 to 1010 cm-3 and the average electron energy is between 1 eV and 10 eV. The electron energy distribution is non-Maxwellian corresponding to one population of high energy primary electrons and two populations of electron with temperature below 10 eV. The plasma potential varies from 1 V to 3 V in relation to the anode, but decrease fastly to negative values when the pressures becomes near to 10-3 Pa. Qualitative interpretations are given and a simple model for plasma density is compared with experimental values. Conditions of cathode operation are also investigated. (M.C.K.)

  15. Preliminary design of the INPE's Solar Vector Magnetograph

    CERN Document Server

    Vieira, L E A; Lago, A Dal; Wrasse, C; Echer, E; Guarnieri, F L; Cardoso, F Reis; Guerrero, G; Costa, J Rezende; Palacios, J; Balmaceda, L; Alves, L Ribeiro; da Silva, L; Costa, L L; Sampaio, M; Soares, M C Rabello; Barbosa, M; Domingues, M; Rigozo, N; Mendes, O; Jauer, P; Dallaqua, R; Branco, R H; Stekel, T; Gonzalez, W; Kabata, W

    2016-01-01

    We describe the preliminary design of a magnetograph and visible-light imager instrument to study the solar dynamo processes through observations of the solar surface magnetic field distribution. The instrument will provide measurements of the vector magnetic field and of the line-of-sight velocity in the solar photosphere. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in reaching the scientific goals of The Atmospheric and Space Science Coordination (CEA) at the Brazilian National Institute for Space Research (INPE). In particular, the CEA's space weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is acquiring progressively the know-how to build state-of-art sol...

  16. Temperature dependence of impact ionization coefficients in InP

    Science.gov (United States)

    Taguchi, Kenko; Torikai, Toshitaka; Sugimoto, Yoshimasa; Makita, Kikuo; Ishihara, Hisahiro

    1986-01-01

    Impact ionization coefficients for electrons and holes in InP were measured experimentally at 25-175 °C in the 400-600 kV/cm electric field range with planar avalanche photodiodes, in which the n-InP avalanche region was separated from the light absorbing InGaAs and/or InGaAsP layers. α and β monotonically decreased with elevated temperatures; β/α slightly decreased with increasing temperature. Comparison of the experimental results with Okuto-Crowell formula on the impact ionization coefficient gave the phonon energy ERO=46 meV and the phonon scattering mean free path λ0=41.7 Å for electron impact ionization and ERO=36 meV and λ0=41.3 Å for hole impact ionization, respectively. Curves calculated by using these parameters agree with the experimental results quite satisfactorily at each temperature.

  17. Extended Wavelength InP Based Avalanche Diodes for MWIR Response Project

    Data.gov (United States)

    National Aeronautics and Space Administration — For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates...

  18. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  19. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  20. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    Science.gov (United States)

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. PMID:26403979

  1. Room temperature particle detectors based on indium phosphide

    Energy Technology Data Exchange (ETDEWEB)

    Yatskiv, R., E-mail: yatskiv@ufe.c [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Grym, J.; Zdansky, K. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Pekarek, L. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8 (Czech Republic)

    2010-01-01

    A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from {sup 241}Am source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers.

  2. Room temperature particle detectors based on indium phosphide

    Science.gov (United States)

    Yatskiv, R.; Grym, J.; Zdansky, K.; Pekarek, L.

    2010-01-01

    A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers.

  3. Room temperature particle detectors based on indium phosphide

    International Nuclear Information System (INIS)

    A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers.

  4. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  5. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  6. Correlation of electron and proton irradiation-induced damage in InP solar cells

    Science.gov (United States)

    Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.; Burke, Edward A.

    1996-01-01

    The measured degradation of epitaxial shallow homojunction n(+)/p InP solar cells under 1 MeV electron irradiation is correlated with that measured under 3 MeV proton irradiation based on 'displacement damage dose'. The measured data is analyzed as a function of displacement damage dose from which an electron to proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.

  7. Design and fabrication of InP micro-ring resonant detectors

    Institute of Scientific and Technical Information of China (English)

    辛海明; 黄永清; 陈海波; 黄辉; 任晓敏; 周星光

    2009-01-01

    The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.

  8. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...... gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology....

  9. Beyond G-band : a 235 GHz InP MMIC amplifier

    Science.gov (United States)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  10. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power......In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  11. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  12. Synthesis and characterization of InP and Ga203 nanowires

    Science.gov (United States)

    Han, Zhanghua; Wang, Fei; Forsberg, Erik; Cao, Xia

    2005-01-01

    We report on the synthesis and characterization of crystalline InP and Ga2O3 nanowires. The nanowires are synthesized using a simple method based on vapor-liquid-solid (VLS) growth; a method we believe could form the basis of cheap and simple fabrication of crystalline nanowires of a broad range of semiconductor materials, including III-V compounds and semiconductor oxides. The reported InP nanowires have an average diameter of 30nm and the Ga2O3 nanowires diameters down to 100nm. Characterization data including SEM, XRD, TEM and PL are presented.

  13. Self-assembly structure formation on patterned InP surfaces

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Self-assembly of polystyrene spheres guided by patterned n-type InP substrates has been investigated. InP surfaces were patterned using a variety of methods including wet chemical etching,sputter coating,thermal evaporation,and photo lithography. The self-assembly of polystyrene spheres depended on the appearance of patterns and was affected by the deposition techniques (sputter coating and thermal evaporation) of Au micro-squares. SEM and AFM were used to characterize the surface morphologies.

  14. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    Science.gov (United States)

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-01

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. PMID:21747509

  15. A symbolically defined InP double heterojunction bipolar transistor large-signal model

    Institute of Scientific and Technical Information of China (English)

    Cao Yuxiong; Jin Zhi; Ge Ji; Su Yongbo; Liu Xinyu

    2009-01-01

    A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD)in Agilent ADS. The model accounts for most physical phenomena incluaing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.

  16. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

    International Nuclear Information System (INIS)

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp)3). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

  17. Absence of tumor suppressor tumor protein 53-induced nuclear protein 1 (TP53INP1) sensitizes mouse thymocytes and embryonic fibroblasts to redox-driven apoptosis.

    Science.gov (United States)

    N'guessan, Prudence; Pouyet, Laurent; Gosset, Gaëlle; Hamlaoui, Sonia; Seillier, Marion; Cano, Carla E; Seux, Mylène; Stocker, Pierre; Culcasi, Marcel; Iovanna, Juan L; Dusetti, Nelson J; Pietri, Sylvia; Carrier, Alice

    2011-09-15

    The p53-transcriptional target TP53INP1 is a potent stress-response protein promoting p53 activity. We previously showed that ectopic overexpression of TP53INP1 facilitates cell cycle arrest as well as cell death. Here we report a study investigating cell death in mice deficient for TP53INP1. Surprisingly, we found enhanced stress-induced apoptosis in TP53INP1-deficient cells. This observation is underpinned in different cell types in vivo (thymocytes) and in vitro (thymocytes and MEFs), following different types of injury inducing either p53-dependent or -independent cell death. Nevertheless, absence of TP53INP1 is unable to overcome impaired cell death of p53-deficient thymocytes. Stress-induced ROS production is enhanced in the absence of TP53INP1, and antioxidant NAC complementation abolishes increased sensitivity to apoptosis of TP53INP1-deficient cells. Furthermore, antioxidant defenses are defective in TP53INP1-deficient mice in correlation with ROS dysregulation. Finally, we show that autophagy is reduced in TP53INP1-deficient cells both at the basal level and upon stress. Altogether, these data show that impaired ROS regulation in TP53INP1-deficient cells is responsible for their sensitivity to induced apoptosis. In addition, they suggest that this sensitivity could rely on a defect of autophagy. Therefore, these data emphasize the role of TP53INP1 in protection against cell injury.

  18. Embossed Bragg Gratings Based on Organically Modified Silane Waveguides in InP.

    Science.gov (United States)

    Liu, J; Lam, Y L; Chan, Y C; Zhou, Y; Ooi, B S; Tan, G; Yao, J

    2000-09-20

    Considering the large variety of applications for optical glass waveguide gratings, the effective production method of embossing for micropatterning, and the unique advantages of InP-based materials, we expect that hybridization of embossed optical glass waveguide gratings and InP substrates will inevitably lead to new applications in integrated optics. We present our preliminary results of research toward the development of solgel-derived glass waveguide gratings made by embossing on InP. Theoretically, the dependence of the stop-band FWHM and transmission contrast of the grating filter on the grating length, and the relationship between the Bragg grating's reflective wavelength and the dopant concentration in the solgel waveguide, are obtained. Experimentally, using organically modified silane, we solve the problem of mismatching of SiO(2) and InP, and successfully fabricate an embossed glass grating with a second-order Bragg reflection wavelength of 1580 nm and a FWHM of 0.7 nm fabricated upon a solgel waveguide on an InP substrate. PMID:18350088

  19. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas;

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  20. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas;

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

  1. Status and future directions of InP solar cell research

    Science.gov (United States)

    Jain, R. K.; Weinberg, I.

    1992-01-01

    An overview of the current status and future directions of InP space solar cell research is provided. The scope of the paper does not allow us to discuss other recent major developments in InP cell modeling, contacts, and characterization, or developments in other solar cell materials. Solar cells made from InP and related materials are not expected to be used in the near future for terrestrial applications, but significant Air-Mass1.5 (AM1.5) cell efficiencies are given for comparison. This paper deals with the developments in single-junction cells, multijunction tandem cells, and space flight testing, including radiation effects. Concentrator InP solar cells are also discussed, since they offer the possibility of simultaneous thermal and current injection annealing. These cells also promise cost effectiveness and the concentrator elements may provide cells with extra protection from space radiation. The concluding section addresses the steps to be taken in the future and provides guidelines for further research and development.

  2. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  3. InP DHBT MMICs for millimeter-wave front-ends

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

    2009-01-01

    In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

  4. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K...

  5. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Directory of Open Access Journals (Sweden)

    R. E. Mamouri

    2015-12-01

    Full Text Available We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN and ice nucleating particle (INP number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN and with radius > 250 nm (APC250, reservoir of favorable INP, as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization can be retrieved from lidar-derived aerosol extinction coefficients (AEC with relative uncertainties of a factor of around 2 (APC50, and of about 25–50 % (APC250, ASC. Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke. We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine. Our study is based on multiyear Aerosol Robotic Network (AERONET photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN and published INP parameterization schemes (with APC250 and ASC as input we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  6. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    OpenAIRE

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-01-01

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-w...

  7. Effect of nuclear spins on the electron spin dynamics in negatively charged InP quantum dots

    OpenAIRE

    Ignatiev, I. V.; Verbin, S. Yu.; Gerlovin, I. Ya.; Maruyama, W.; Pal, B.; Masumoto, Y.

    2005-01-01

    Kinetics of polarized photoluminescence of the negatively charged InP quantum dots in weak magnetic field is studied experimentally. Effect of both the nuclear spin fluctuations and the dynamical nuclear polarization on the electron spin orientation is observed.

  8. Voltammetric Study and Determination of Phenylephrine Hydrochloride at INP-Nafion-Modified CPE Sensor Employing Differential Pulse Voltammetry

    Directory of Open Access Journals (Sweden)

    Zeinab Pourghobadi

    2014-03-01

    Full Text Available In this study, describes the voltammetric oxidation and determination of phenylephrine (PHE hydrochloride at a new chemically modified electrode. Iron nanoparticle (INPs was dispersed in Nafion solution to obtain a INP-Nafion-modified CPE for the voltammetric analysis of PHE .The electrochemical behaviour of PHE on INP-Nafion-modified CPE was studied, using cyclic voltammetry as a diagnostic technique. The effects of amount of INPs-Nafion dispersion, pH, and scan rate on the response of modified electrode for the oxidation of PHE were investigated. Using differential pulse voltammetry (DPV, the modified electrode indicated a dynamic linear range for quantitative determination of PHE in the range of 5 μM−130 μM, and the detection limit was estimated to be 0.76 μM. The method was developed for the determination of PHE in pharmaceutical samples with satisfactory results.

  9. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Science.gov (United States)

    Mamouri, Rodanthi-Elisavet; Ansmann, Albert

    2016-05-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols), n100, dry (particles with dry radius > 100 nm, reservoir of desert dust CCN), and of n250, dry (particles with dry radius > 250 nm, reservoir of favorable INP), as well as profiles of the particle surface area concentration sdry (used in INP parameterizations) can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5-2 in the case of n50, dry and n100, dry and of about 25-50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine) and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input) and available INP parameterization schemes (with n250, dry and sdry as input) we finally compute

  10. Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

    Science.gov (United States)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

  11. Large area bulk superconductors

    Science.gov (United States)

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  12. On the usage of classical nucleation theory in quantification of the impact of bacterial INP on weather and climate

    Science.gov (United States)

    Sahyoun, Maher; Wex, Heike; Gosewinkel, Ulrich; Šantl-Temkiv, Tina; Nielsen, Niels W.; Finster, Kai; Sørensen, Jens H.; Stratmann, Frank; Korsholm, Ulrik S.

    2016-08-01

    Bacterial ice-nucleating particles (INP) are present in the atmosphere and efficient in heterogeneous ice-nucleation at temperatures up to -2 °C in mixed-phase clouds. However, due to their low emission rates, their climatic impact was considered insignificant in previous modeling studies. In view of uncertainties about the actual atmospheric emission rates and concentrations of bacterial INP, it is important to re-investigate the threshold fraction of cloud droplets containing bacterial INP for a pronounced effect on ice-nucleation, by using a suitable parameterization that describes the ice-nucleation process by bacterial INP properly. Therefore, we compared two heterogeneous ice-nucleation rate parameterizations, denoted CH08 and HOO10 herein, both of which are based on classical-nucleation-theory and measurements, and use similar equations, but different parameters, to an empirical parameterization, denoted HAR13 herein, which considers implicitly the number of bacterial INP. All parameterizations were used to calculate the ice-nucleation probability offline. HAR13 and HOO10 were implemented and tested in a one-dimensional version of a weather-forecast-model in two meteorological cases. Ice-nucleation-probabilities based on HAR13 and CH08 were similar, in spite of their different derivation, and were higher than those based on HOO10. This study shows the importance of the method of parameterization and of the input variable, number of bacterial INP, for accurately assessing their role in meteorological and climatic processes.

  13. Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

    Science.gov (United States)

    Luryi, S.; Kastalsky, A.; Gouzman, M.; Lifshitz, N.; Semyonov, O.; Stanacevic, M.; Subashiev, A.; Kuzminsky, V.; Cheng, W.; Smagin, V.; Chen, Z.; Abeles, J. H.; Chan, W. K.; Shellenbarger, Z. A.

    2010-10-01

    Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current, about 1 nA/cm2 at the reverse bias of 2 V. The low leakage makes possible a sensitive readout circuitry even though the diode has a large area (1×1 mm2) and therefore large capacitance (50 pF). Results of electrical, optical and radiation testing of the diodes are presented. Detection of individual α-particles and γ-photons is demonstrated.

  14. Quantum Size Effect of Inner Cladding Fibres with InP Nano Thin Films

    Institute of Scientific and Technical Information of China (English)

    WANG Jin; ZHANG Ru; GUAN Li-Ming

    2008-01-01

    Optical amplified characteristics of innet cladding fibres with InP thin films are tested.The results indicate that this kind of fibres exhibit better optical amplification,which is advantageous for short lengths of fibres.The amplification coeffients of per unit length are 1.40-5.12dB/m at the wave band from 906 to 1044nm.1.40-15.35dB/m from 1080 to 1491 nm.and 1.86-7.44dB/m from 1524 to 1596nm.Based on the hydrogen atomic model,we calculate the comparative size of the InP particle αB=8.313 nm.The result displays the quantum size effect.By calculating the change of the energy band of particles with different sizes,the experimental data are explained by quantum size effect.

  15. Formation of quantum wires and dots on InP(001) by As/P exchange

    International Nuclear Information System (INIS)

    We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

  16. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  17. X-ray diffraction analysis of multilayer porous InP(001) structure

    International Nuclear Information System (INIS)

    Multilayer structures composed of four porous bilayers have been studied by high-resolution X-ray diffraction using synchrotron radiation, and the photoluminescence of these structures has been investigated at 4 K. The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data.

  18. Evolution of InP surfaces under low fluence pulsed UV irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Musaev, O.R. [Department of Physics, University of Missouri Kansas City, Rockhill Road 5100, Kansas City, MO 64110 (United States)], E-mail: musaevo@umkc.edu; Kwon, O.S.; Wrobel, J.M.; Zhu, D.-M.; Kruger, M.B. [Department of Physics, University of Missouri Kansas City, Rockhill Road 5100, Kansas City, MO 64110 (United States)

    2008-07-15

    An InP wafer was irradiated in air by a series of UV pulses from a nitrogen laser with fluences of 120 mJ/cm{sup 2} and 80 mJ/cm{sup 2}. These fluences are below the single-pulse ablation threshold of InP. Over the studied region the distribution of the radiation intensity was uniform. The number of pulses varied from 50 to 6000. The evolution of the surface morphology and structure was characterized by atomic force microscopy, optical microscopy and Raman spectroscopy. The relationship between mound size and the number of pulses starts out following a power law, but saturates for a sufficiently high number of pulses. The crossover point is a function of fluence. A similar relation exists for the surface roughness. Raman spectroscopic investigations showed little change in local crystalline structure of the processed surface layer.

  19. Low-Threshold Conjugated Polymer Distributed Feedback Lasers on InP Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHANG Su-Mei; ZHANG Ding-Ke; MA Dong-Ge

    2008-01-01

    We demonstrate a low threshold polymer sofid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure.The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene](MEH-PPV) doped polystyrene (PS) and formed by drop-coating method.The second order Bragg scattering region on the InP substrate gave rise to strong feedback,thus a lazing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd:YAG pulsed laser.The devices show a laser threshold as low as 7n J/pulse.

  20. Unusual nanostructures of “lattice matched” InP on AlInAs

    International Nuclear Information System (INIS)

    We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology

  1. Emission channeling studies of implanted $^{167m}$Er in InP

    CERN Document Server

    Wahl, U; Langouche, G; Araújo, J P

    2001-01-01

    We have used conversion electron emission channeling to determine the lattice location of $^{167m}$Er ($t_{1/2}$=2.28 s) in InP after 60 keV room temperature implantation of $^{167}$Tm ($t_{1/2}$=9.25 d) at a dose of 6.8 $\\times 10^{12}$ cm$^{-2}$. Following annealing at temperatures above the major recovery step of the implantation damage at 100-150°C, we observe around 75% of Er on substitutional In sites. A smaller fraction of Er (7%) is found on substitutional P sites, the remainder on random sites. Annealing the unprotected InP crystal at temperatures above 250°C in vacuum causes a decrease in the channeling effects.

  2. High-efficiency ultrasmall polarization converter in InP membrane.

    Science.gov (United States)

    Pello, Josselin; van der Tol, Jos; Keyvaninia, Shahram; van Veldhoven, René; Ambrosius, Huub; Roelkens, Gunther; Smit, Meint

    2012-09-01

    An ultrasmall (polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.2  dB at a wavelength of 1.53 μm. Furthermore, our design is found to be broadband and tolerant to dimension variations. PMID:22940999

  3. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    OpenAIRE

    Piksová Kateřina; Grym Jan; Procházková Olga; Yatskiv Roman

    2011-01-01

    Abstract Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. More...

  4. Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei;

    2015-01-01

    Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

  5. Synthesis and characterization of InP and InN colloidal quantum dots.

    Energy Technology Data Exchange (ETDEWEB)

    Boyle, Timothy J.; Osinski, Marek (University of New Mexico, Albuquerque, New Mexico); Greenberg, Melisa (University of New Mexico, Albuquerque, New Mexico); Bunge, Scott D.; Chen, Weiliang (University of New Mexico, Albuquerque, New Mexico); Smolyakov, G. A. (University of New Mexico, Albuquerque, New Mexico); Pulford, B. N. (University of New Mexico, Albuquerque, New Mexico); Jiang, Ying-Bing (University of New Mexico, Albuquerque, New Mexico)

    2005-04-01

    InP quantum dots (QDs) with zinc blende structure and InN QDs with hexagonal structure were synthesized from appropriate organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The QDs were characterized by TEM, the associated energy dispersive spectroscopy (EDS), electron diffraction, and steady state UV-VIS optical absorption and photoluminescence spectroscopy. To our best knowledge, this paper reports synthesis of InN colloidal quantum dots for the first time.

  6. Design and fabrication of an InP arrayed waveguide grating for monolithic PICs

    Institute of Scientific and Technical Information of China (English)

    Pan Pan; An Junming; Wang Liangliang; Wu Yuanda; Wang Yue; Hu Xiongwei

    2012-01-01

    A 10-channel,200 GHz channel spacing InP arrayed waveguide grating was designed,and the deep ridge waveguide design makes it polarization independent.Under the technologies of molecular beam epitaxy,lithography,and induced coupler plasma etching,the chip was fabricated in our laboratory.The test results show that the insertion loss is about 8 dB,and the crosstalk is less than-17 dB.

  7. Schottky Barriers Based on Nanoporous InP with Gold Nanoparticles.

    Science.gov (United States)

    Barlas, Tetyana; Dmitruk, Mykola; Kotova, Nataliya; Mamykin, Sergii

    2016-12-01

    Schottky barrier structures based on nanoporous InP with inclusion of Au nanoparticles and evaporated semitransparent Au film have been made. The spectra of short-circuit photocurrent in the visible range and current-voltage characteristics have been measured. Prepared structures are characterized by increased photocurrent due to the microrelief interface and surface plasmon excitation in gold nanoparticles as well as increased surface recombination especially in the short wavelength region. PMID:27075341

  8. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    Science.gov (United States)

    Mannarino, Manuel; Chintala, Ravi; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof; Vandervorst, Wilfried

    2015-12-01

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  9. Structure of InP single crystals irradiated with reactor neutrons

    International Nuclear Information System (INIS)

    The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast neutrons and the full spectrum of the reactor neutrons and subsequent heat treatment procedures. The lattice parameter of InP single crystals decreases under neutron irradiation as opposed to other III-V semiconductor compounds. Fast neutrons make the main contribution to the change of the lattice parameter. A thermal neutron component initiates the formation of Sn atoms in the material, but does not influence the change of the lattice parameter significantly. Heat treatment of the irradiated samples up to 600 deg. C causes annealing of the radiation defects and recovery of the lattice parameter. With increasing neutron fluences, the lattice parameter becomes even higher than before irradiation. The data analysis proves the following assumption: anti-site defects PIn mainly contribute to the lattice parameter decrease during neutron irradiation of InP. In this case, anti-site imperfections produce an effect similar to that of vacancy defects

  10. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... performance evaluation. A single-branch cascode based PA using single-finger InP DHBT devices shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz. The output power at 1dB compression is 9.0dBm. A similar two-way combined cascode based PA using three-finger devices...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  11. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  12. The electrochemical capacitance-voltage characterization of InP based p-i-n structures

    Science.gov (United States)

    Wang, Li-wei; Lu, Yi-dan; Xu, Jin-tong; Li, Xiang-yang

    2013-09-01

    Electrochemical Capacitance-Voltage (EC-V) profiling is currently one of the most often used methods for majority carrier concentration depth profiling of semiconductors. The experiments of EC-V profiling on InP based structures were conducted by Wafer Profiler CVP21, and there are two problems in the experiments of InP based p-i-n structures : a)the experimental results of EC-V profiling of i layer were not in line with the theoretically data after the EC-V profiling of p layer, which can be measured within the error range; b) The measurements of etching depth were not very accurate. In this paper, we made comparative experiments on InP based n-i-n structures, and find out a method to deal with the first problem: firstly etch p layer before EC-V profiling, so we can gain a relatively accurate result of EC-V profiling of i layer. Besides, use back contacts instead of front contacts to do the EC-V profiling according to the instruction book of the Wafer Profiler CVP21. Then the author tried to infer the reason that results in the first problem theoretically. Meanwhile we can calibrate the etching depth through Profile-system and Scanning Probe Microscope (SPM). And there are two possible reasons which result in the second problem: the defects of the semiconductors and the electrolyte we used to etch the semiconductors.

  13. Preparation of p-type InP layers for detection of radiation

    Science.gov (United States)

    Procházková, O.; Grym, J.; Zavadil, J.; Zdánský, K.

    2005-02-01

    We have focused on the investigation of the impact of Ce, Tm, Tm 2O 3, and Lu addition in the liquid-phase epitaxial growth process on the structural and electro-optical properties of InP layers in the context of their possible application in detector structures, where detection will be mediated via the depletion layer of high quality Schottky contact. The effect of Tm 2O 3 and Lu is reported for the first time. The grown layers were examined via scanning electron microscopy, low-temperature photoluminescence spectroscopy, capacitance-voltage measurements using the mercury probe and by the temperature-dependent Hall effect. Availing Tm addition with concentration 5.4×10 -2 at%, we have prepared thick (>10 μm) p-type conductivity InP layers with the structural defect density reduced by a half-order of magnitude and reduced electrically active impurity concentration up to ˜7×10 14 cm -3. We point out that Tm appears as a promising candidate for the preparation of very pure p-type InP layers. The mechanism of purification efficiency of different rare earths from donors and acceptors leading to the n→p conductivity type crossover has been discussed.

  14. Aqueous bromine etching of InP: a specific surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

    2012-06-15

    The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program

    Science.gov (United States)

    Schuch, Nelson Jorge; Cupertino Durao, Otavio S.

    The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (CBP) and the results of the NANOSATC-BR1, the first Brazilian CubeSat launching, expected for 2014's first semester, are presented. The CBP consists of two CubeSats, NANOSATC-BR 1 (1U) & 2 (2U) and is expected operate in orbit for at least 12 months each, with capacity building in space science, engineering and computer sciences for the development of space technologies using CubeSats satellites. The INPE-UFSM’s CBP Cooperation is basically among: (i) the Southern Regional Space Research Center (CRS), from the Brazilian INPE/MCTI, where acts the Program's General Coordinator and Projects NANOSATC-BR 1 & 2 Manager, having technical collaboration and management of the Mission’s General Coordinator for Engineering and Space Technology at INPE’s Headquarter (HQ), in São José dos Campos, São Paulo; (ii) the Santa Maria Space Science Laboratory (LACESM/CT) from the Federal University of Santa Maria - (UFSM); (iii) the Santa Maria Design House (SMDH); (iv) the Graduate Program in Microelectronics from the Federal University of Rio Grande do Sul (MG/II/UFRGS); and (v) the Aeronautic Institute of Technology (ITA/DCTA/CA-MD). The INPE-UFSM’s CBP has the involvement of UFSM' undergraduate students and graduate students from: INPE/MCTI, MG/II/UFRGS and ITA/DCTA/CA-MD. The NANOSATC-BR 1 & 2 Projects Ground Stations (GS) capacity building operation with VHF/UHF band and S-band antennas, are described in two specific papers at this COSPAR-2014. This paper focuses on the development of NANOSATC-BR 1 & 2 and on the launching of NANOSATC-BR1. The Projects' concepts were developed to: i) monitor, in real time, the Geospace, the Ionosphere, the energetic particle precipitation and the disturbances at the Earth's Magnetosphere over the Brazilian Territory, and ii) the determination of their effects on regions such as the South American Magnetic Anomaly (SAMA) and the Brazilian sector of the

  16. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.

    2008-01-01

    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  17. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  18. Kirk effect mechanism in type-II InP /GaAsSb double heterojunction bipolar transistors

    Science.gov (United States)

    Tao, N. G.; Bolognesi, C. R.

    2007-09-01

    The Kirk effect mechanism is studied in type-II InP /GaAsSb/InP NpN double heterojunction bipolar transistors (DHBTs) both experimentally and through two-dimensional hydrodynamic numerical simulations. We show that the large valence band discontinuity ΔEV at the GaAsSb-InP base/collector heterojunction does not allow hole injection into the InP collector as is the case in homojunction collectors. Instead, a blocking barrier is electrostatically induced in the base layer at high collector current densities: this barrier increases base recombination and decreases the current gain. We show that tunneling transport must be considered at the base/collector heterojunction and that the induced barrier depends on the base layer doping level—effectively, InP /GaAsSb DHBTs display high-current limitations that are also controlled to some extent by the base doping level.

  19. Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

    Science.gov (United States)

    Oomae, H.; Irizawa, S.; Jinbo, Y.; Toyota, H.; Kambayashi, T.; Uchitomi, N.

    2013-09-01

    The detailed crystalline structure of molecular beam epitaxially grown MnAs thin films on InP(001) substrate has been investigated using high resolution X-ray diffraction techniques. Reciprocal space mapping of the MnAs/InP(001) samples indicates that the MnAs has a cubic zinc-blende (zb) structure with the epitaxial relationship zb-MnAs[110]|InP[110]. The lattice constant of zb-MnAs is ˜6.06 Å. The MnAs lattice is relaxed and is mosaic-like likely due to large lattice mismatch between the film and InP substrate. The isotropic nature of the magnetic properties supported our conjecture that the MnAs epitaxial film under study has indeed a cubic structure.

  20. Bulk materials handling review

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2007-02-15

    The paper provides details of some of the most important coal handling projects and technologies worldwide. It describes development by Aubema Crushing Technology GmbH, Bedeschi, Cimbria Moduflex, DBT, Dynamic Air Conveying Systems, E & F Services, InBulk Technologies, Nord-Sen Metal Industries Ltd., Pebco Inc, Primasonics International Ltd., R.J.S. Silo Clean (International) Ltd., Takraf GmbH, and The ACT Group. 17 photos.

  1. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    Science.gov (United States)

    Grym, Jan; Procházková, Olga; Yatskiv, Roman; Piksová, Kateřina

    2011-05-01

    Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content.

  2. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    Directory of Open Access Journals (Sweden)

    Piksová Kateřina

    2011-01-01

    Full Text Available Abstract Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content.

  3. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    International Nuclear Information System (INIS)

    Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content. (paper)

  4. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    Science.gov (United States)

    Grym, Jan; Yatskiv, Roman

    2013-04-01

    Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.

  5. Nuclear geophysics in space and atmospheric reserch at INPE/BRAZIl

    International Nuclear Information System (INIS)

    During the last years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field it may be considered as a contribution to the history of meteorite falls in our planet or possible collision with big meteorites which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In the atmospheric research field, spatial and temporal variations of radon measurements in the lower atmosphere allow correlations from micrometeorology to worlwide scale through mesoscale, in the interpretation of phenomena which deal with the dynamics of air masses. (Author)

  6. Nuclear geophysics in space and atmospheric research at INPE/BRAZIl

    Science.gov (United States)

    Nordemann, D. J. R.; Pereira, E. B.; Marinho, E. V. A.; Sircillineto, F.

    1986-05-01

    In recent years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field a contribution has been made to the history of meteorite falls on our planet and its possible collision with large meteorites, which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In atmospheric research, spatial and temporal variations of radon measurements in the lower atmosphere permit correlations from micrometeorology to mesoscale phenomena, related to the dynamics of air masses.

  7. Temperature Dependent Photoluminescence Measurements of Single InP Quantum Dots

    Science.gov (United States)

    Reischle, Matthias; Beirne, Gareth J.; Rossbach, Robert; Jetter, Michael; Michler, Peter

    2007-04-01

    In this work, we have investigated single InP quantum dots by way of photoluminescence measurements. The lower energy dots show emission from excited states at moderate excitation powers while those emitting at higher energies do not even at high power densities. Temperature dependent measurements were carried out with the objective of understanding this difference and to develop a better understanding of the carrier escape from the dots at elevated temperatures. We observed a strong correlation between the electronic level spacings and the activation energies obtained using an arrhenius model, which thereby indicates that the carriers escape via higher lying levels.

  8. Influence of Grain Size on Electrical and Optical Properties of InP Films

    Institute of Scientific and Technical Information of China (English)

    Mustafa (O)ztas

    2008-01-01

    InP film samples were prepared by spray pyrolysis technique using aqueous solutions of lnCl3 and Na2HPO4,which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film.The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.

  9. Growth of SiO2 on InP substrate by liquid phase deposition

    International Nuclear Information System (INIS)

    We have grown silicon dioxide (SiO2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO2 saturated hydrofluorosilicic acid (H2SiF6), 0.1 M boric acid (H3BO3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO2 film were about 187.5 A/h and 1.495 under the constant growth temperature of 40 deg. C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H2O2) that can regulate the concentration of OH- ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO2 saturated H2SiF6 in treatment solution.

  10. Annealing of irradiated n+p InP buried homojunctions

    Science.gov (United States)

    Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

    1994-01-01

    At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

  11. Wormholes in Bulk Viscous Cosmology

    OpenAIRE

    Jamil, Mubasher

    2008-01-01

    We investigate the effects of the accretion of phantom energy with non-zero bulk viscosity onto a Morris-Thorne wormhole. We have found that if the bulk viscosity is large then the mass of wormhole increases rapidly as compared to small or zero bulk viscosity.

  12. A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor;

    2008-01-01

    The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor...

  13. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Science.gov (United States)

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films. PMID:27455379

  14. 1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC).

    Science.gov (United States)

    Evans, P; Fisher, M; Malendevich, R; James, A; Goldfarb, G; Vallaitis, T; Kato, M; Samra, P; Corzine, S; Strzelecka, E; Studenkov, P; Salvatore, R; Sedgwick, F; Kuntz, M; Lal, V; Lambert, D; Dentai, A; Pavinski, D; Zhang, J; Cornelius, J; Tsai, T; Behnia, B; Bostak, J; Dominic, V; Nilsson, A; Taylor, B; Rahn, J; Sanders, S; Sun, H; Wu, K-T; Pleumeekers, J; Muthiah, R; Missey, M; Schneider, R; Stewart, J; Reffle, M; Butrie, T; Nagarajan, R; Ziari, M; Kish, F; Welch, D

    2011-12-12

    In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

  15. The Incredible Bulk

    CERN Document Server

    Fukushima, Keita; Kumar, Jason; Sandick, Pearl; Yamamoto, Takahiro

    2014-01-01

    Recent experimental results from the LHC have placed strong constraints on the masses of colored superpartners. The MSSM parameter space is also constrained by the measurement of the Higgs boson mass, and the requirement that the relic density of lightest neutralinos be consistent with observations. Although large regions of the MSSM parameter space can be excluded by these combined bounds, leptophilic versions of the MSSM can survive these constraints. In this paper we consider a scenario in which the requirements of minimal flavor violation, vanishing $CP$-violation, and mass universality are relaxed, specifically focusing on scenarios with light sleptons. We find a large region of parameter space, analogous to the original bulk region, for which the lightest neutralino is a thermal relic with an abundance consistent with that of dark matter. We find that these leptophilic models are constrained by measurements of the magnetic and electric dipole moments of the electron and muon, and that these models have ...

  16. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  17. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander

    2015-01-01

    the concentration gradient or bulk flow along a pressure gradient. The driving force seems to depend on the mode of phloem loading. In a majority of plant species phloem loading is a thermodynamically active process, involving the activity of membrane transporters in the sieve-element companion cell complex. Since...... assimilate movement includes an apoplasmic step, this mode is called apoplasmic loading. Well established is also the polymer-trap loading mode, where the phloem-transport sugars are raffinose-family oligomers in herbaceous plants. Also this mode depends on the investment of energy, here for sugar......Assimilates synthesized in the mesophyll of mature leaves move along the pre-phloem transport pathway to the bundle sheath of the minor veins from which they are loaded into the phloem. The present review discusses the most probable driving force(s) for the pre-phloem pathway, diffusion down...

  18. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel;

    2015-01-01

    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  19. Hole Rashba effect and g-factor in InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X W [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Xia, J B [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

    2007-01-21

    The hole Rashba effect and g-factor in InP nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in Bessel functions. It is well known that the electron Rashba coefficient increases nearly linearly with the electric field. As the Rashba spin splitting is zero at zero k{sub z} (the wave vector along the wire direction), the electron g-factor at k{sub z} = 0 changes little with the electric field. While we find that as the electric field increases, the hole Rashba coefficient increases at first, then decreases. It is noticed that the hole Rashba coefficient is zero at a critical electric field. The hole g-factor at k{sub z} = 0 changes obviously with the electric field.

  20. A 20-GHz ultra-high-speed InP DHBT comparator

    International Nuclear Information System (INIS)

    An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm2. It consumes 440 mW from a single −4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China. (semiconductor integrated circuits)

  1. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves;

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology...... and has a total active emitter area of 68.4 μm2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power‐added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

  2. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India); Rao, G Venugopal [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Amarendra, G [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Abhaya, S [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Sastry, V Sankara [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Nair, K G M [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Ravichandran, V [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India)

    2005-12-21

    Depth resolved positron annihilation measurements were carried out on 85 keV and 1 MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 10{sup 15} cm{sup -2} and coexistence of monovacancies and divacancies for 10{sup 16} cm{sup -2} dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made.

  3. Radiation hardening of InP solar cells for space applications

    International Nuclear Information System (INIS)

    The aim of this work is to develop a radiation resistant thin InP-based solar cells for space applications on more mechanically resistant, lighter, and cheaper substrates. In this paper, we present the development of a p+/nn+ InP-based solar cell structures with very thin emitter and base layers. A thin emitter helps to increase the collection of carriers generated by high energy incident photons from the solar spectrum. The use of a thin n base structure should improve the radiation resistance of this already radiation resistant technology. A remarkable improvement of high energy photons response is shown for InP solar cells with emitters 400 A thick

  4. InP nanowire p-type doping via Zinc indiffusion

    Science.gov (United States)

    Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars

    2016-10-01

    We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350-500 °C for 5-20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm-3 for NWs without post-annealing, and up to 1018 cm-3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

  5. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  6. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

    Science.gov (United States)

    Ismaeel Maricar, Mohamed; Khalid, A.; Dunn, G.; Cumming, D.; Oxley, C. H.

    2015-01-01

    An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s-1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s-1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

  7. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    Science.gov (United States)

    Pantzas, K.; Le Bourhis, E.; Patriarche, G.; Troadec, D.; Beaudoin, G.; Itawi, A.; Sagnes, I.; Talneau, A.

    2016-03-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m-2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  8. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

    International Nuclear Information System (INIS)

    Depth resolved positron annihilation measurements were carried out on 85 keV and 1 MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 1015 cm-2 and coexistence of monovacancies and divacancies for 1016 cm-2 dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made

  9. Effects of pressure on deep levels in semiconductors: The MFe center in InP

    International Nuclear Information System (INIS)

    This work investigated the effects of hydrostatic pressure on the properties and bistability of the scientifically challenging and technologically important deep MFe center in iron (Fe)-doped, n-type indium phosphide (InP). When occupied by electrons, the center can be reversibly placed in either of two configurations, termed A and B, by the proper choice of electric biasing conditions and temperature. Pressure has a very large influence on the balance between these two configurations, favoring A over B. Above 8 kbar essentially only the A configuration is observed. This result, along with detailed studies of the effects of pressure on the energetics of the two configurations and on the kinetics of the B→A transformation, provide important new insights about the nature of the two configurations and their associated deep levels. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts.

    Science.gov (United States)

    Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M

    2009-07-01

    We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations. PMID:19537736

  11. Radiation-hard, high efficiency InP solar cell and panel development

    International Nuclear Information System (INIS)

    Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 1015 1 MeV electrons, and 12% after 1016. These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

  12. Channeling investigations of MeV Zn implanted InP

    Science.gov (United States)

    Kling, A.; Krause, H.; Flagmeyer, R.-H.; Vogt, J.; Butz, T.

    1995-03-01

    The high-energy Zn + ion implantation of InP is a promising method for the formation of buried p-type conducting layers. Defect properties and inclusion mechanism of zinc implanted samples with energies of 1.2 and 2.5 MeV to doses of 5 × 10 14-5 × 10 15 cm -2 at a temperature of 200°C were investigated with ion beam methods, XTEM and SNMS to some extent. Also the influence of rapid thermal annealing on the structural properties was studied. After implantation we found no evidence for amorphization or extended defects but point-like defects. During annealing the surface region recovered nearly completely while in depth the point-like defects agglomerated in dislocation loops. Further we observed a remarkable redistribution of the Zn atoms due to annealing.

  13. Nonresonant tunneling in single asymmetric pairs of vertically stacked InP quantum dots

    Science.gov (United States)

    Reischle, M.; Beirne, G. J.; Roßbach, R.; Jetter, M.; Schweizer, H.; Michler, P.

    2007-08-01

    Single pairs of vertically stacked asymmetric pairs of InP quantum dots embedded in GaInP barriers have been investigated as a function of interdot spacer thickness. Time integrated and time-resolved photoluminescence measurements have been performed, with the former showing a change in the intensity ratio between the two dots and the latter an increasing difference in the photoluminescence decay time of the two dots when reducing the spacer thickness. Hence, we suggest transitions from vanishing tunnel coupling to electron tunneling and, finally, to electron and hole tunneling for decreasing barrier widths. The different times are estimated from the measurement data, and the changes are described by a rate equation model. The results clearly show the nonresonant character of the tunneling process as a result of the different ground state energies (approximately 40meV ) of the unequally sized dots.

  14. A 20-GHz ultra-high-speed InP DHBT comparator

    Institute of Scientific and Technical Information of China (English)

    Huang Zhenxing; Zhou Lei; Su Yongbo; Jin Zhi

    2012-01-01

    An ultra-high-speed,master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frcquency of 170 GHz,The complete chip die,including bondpads,is 0.75 × 1.04 mm2.It consumes 440 mW from a single -4 V power supply,excluding the clock part.77 DHBTs have been used in the monolithic comparator.A full Nyquist test has been performed up to 20 GHz,with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz.To our knowledge,this is the first InP based integrated circuit including more than 70 DHBTs,and it achieves the highest sampling rate found on the mainland of China.

  15. Determining the base resistance of InP HBTs: An evaluation of methods and structures

    Science.gov (United States)

    Nardmann, Tobias; Krause, Julia; Pawlak, Andreas; Schroter, Michael

    2016-09-01

    Many different methods can be found in the literature for determining both the internal and external base series resistance based on single transistor terminal characteristics. Those methods are not equally reliable or applicable for all technologies, device sizes and speeds. In this review, the most common methods are evaluated regarding their suitability for InP heterojunction bipolar transistors (HBTs) based on both measured and simulated data. Using data generated by a sophisticated physics-based compact model allows an evaluation of the extraction method precision by comparing the extracted parameter value to its known value. Based on these simulations, this study provides insight into the limitations of the applied methods, causes for errors and possible error mitigation. In addition to extraction methods based on just transistor terminal characteristics, test structures for separately determining the components of the base resistance from sheet and specific contact resistances are discussed and applied to serve as reference for the experimental evaluation.

  16. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  17. 国外InP HEMT和InP HBT的发展现状及应用%Development and Application of InP HEMT and InP HBT

    Institute of Scientific and Technical Information of China (English)

    姚立华

    2009-01-01

    InP device is the first selection in millimeter wave bands because for its high frequency, high power, low noise figure and radiation hardened. InP HEMT and InP HBT behave excellent performance in military applications, such as satellite and radar. Current development, excellent performances and the main manufacturers of InP HEMT/InP HBT devices and circuits are presented. InP HEMT according to low noise and power is described. Their applications in military are introduced, for instance in T/R module of satellite phase array radar system, receivers in spacecraft and ground based station and communication systems. The development trends are summarized according to the development of InP device and circuits abroad.%在毫米波段,InP基器件由于其具有高频、高功率、低噪声及抗辐射等特点,成为人们的首选,尤其适用于空间应用.InP HEMT和InP HBT已在卫星、雷达等军事应用中表现出了优异的性能.分别介绍了InP HEMT和InP HBT器件及电路的发展现状,现在能达到的最高性能及主要生产公司等,其中InP HEMT又分别按低噪声和功率进行了详细介绍.介绍了它们在军事上的主要应用,以具体的应用实例介绍了在卫星相控阵雷达系统天线中的T/R模块中、航天器和地面站的接收机中、以及雷达和通信系统中的应用情况、达到的性能及可靠性等.并根据国外InP器件和电路的发展现状总结了其未来发展趋势.

  18. Deep InP Gratings for Opto-Electronic Devices Etched by Cl2/CH4/Ar Inductively Coupled Plasma

    Institute of Scientific and Technical Information of China (English)

    WANG Jian; TIAN Jian-Bai; XIONG Bing; SUN Chang-Zheng; HAO Zhi-Biao; LUO Yi

    2006-01-01

    @@ Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2/CH4/Ar ICP are optimized for high anisotropy,and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.

  19. Self-catalyzed growth of pure zinc blende 〈110〉 InP nanowires

    International Nuclear Information System (INIS)

    We demonstrate the self-catalyzed vapor-liquid-solid growth of 〈110〉 InP nanowires (NWs) by metal organic chemical vapor deposition. The 〈110〉 InP nanowire is formed via a spontaneous kinking from the original 〈111〉 growth direction, which is attributed to instabilities at the liquid/solid interface caused by a fast In incorporation into the droplet. The NW length before kinking has a nearly linear relationship with the diameter, offering a way to control the NW morphology for different applications. The 〈110〉 nanowire exhibits pure zinc blende crystal structure and a narrower emission linewidth in comparison with a typical 〈111〉 nanowire, demonstrating its potential applications in high-performance electronic and photonic devices

  20. Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

    Institute of Scientific and Technical Information of China (English)

    HUANG Lei; SUN Bo; YAO Jian-quan; WANG Peng

    2008-01-01

    The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied.In collinear phase-matching,the optimum phase-matching wave bands of these two crystals are calculated.The optimum phase-matching wave bands in GaAs and InP are 0.95~1.38 μm and 0.7~0.96 μm respectively.The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed.The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed.It can serve for the following experiments as a theoretical evidence and a reference aswell.

  1. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    Science.gov (United States)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  2. InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer

    Institute of Scientific and Technical Information of China (English)

    L(U) Xiao-jing; WU Ju; XU Bo; ZENG Yi-ping; WANG Biao-qiang; WANG Zhan-guo

    2007-01-01

    An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure on the In0.53Ga0.47As and In0.52Al0.48As buffer layer lattice-matched to InP(001) substrate using mo-lecular beam epitaxy. The effects of AlAs insertion on the InAs nanostructures were investigated and discussed.

  3. Surface Dipole Formation and Lowering of the Work Function by Cs Adsorption on InP(100) Surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y.; Liu, Z.; Pianetta, P.

    2007-06-08

    The Cs adsorption on InP(100) surface is studied with Synchrotron Radiation Photoelectron Spectroscopy. The charge transfer from Cs to the InP substrate is observed from the Cs induced In4d and P2p components, and this charge transfer results in surface dipole formation and lowering of the work function. The Cs4d intensity saturates at coverage of one monolayer (ML). However, a break point is observed at 0.5 ML, which coincides with the achievement of the minimum work function. This break point is due to the different vertical placement of the first and the second half monolayer of Cs atoms. Based on this information, a simple bi-layer structure for the Cs layer is presented. This bi-layer structure is consistent with the behavior of the charge transfer from the Cs to the InP substrate at different Cs coverages. This, in turn, explains why the work function decreases to a minimum at 0.5 ML of Cs and remains almost constant beyond this coverage. The depolarization of the surface dipoles is attributed to the saturation of charge transfer to the surface In atoms and the polarization of the Cs atoms in the second half monolayer induced by the positively charged Cs atoms in the first half monolayer.

  4. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  5. Mining the bulk positron lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Aourag, H.; Guittom, A. [Centre de Recherche Nucleaire d' Alger (CRNA), Alger Gare - Algiers (Algeria)

    2009-02-15

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Mining the bulk positron lifetime

    International Nuclear Information System (INIS)

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Advances in bulk port development

    Energy Technology Data Exchange (ETDEWEB)

    Soros, P. (Soros Associates Consulting Engineers, New York, NY (USA))

    1991-03-01

    The article features several recently developed bulk ports which illustrate aspects of new technology or concepts in maritime transport. Low handling capacity bulk terminals at Ponta da Madeira, Brazil and Kooragang Island, Australia and the low-cost bulk port at Port of Corpus Christi, Texas are described. Operations at the ports of Pecket and Tocopilla in Chile, which had special technical problems, are mentioned. Coal terminals at Port Kembla, Australia and St. Johns River in Florid Jacksonville, Florida are featured as examples of terminals which had to be designed to meet high environmental standards. 13 refs., 2 figs., 14 photos.

  8. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    Science.gov (United States)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  9. Aerosol measurements during COPE: composition, size, and sources of CCN and INPs at the interface between marine and terrestrial influences

    Science.gov (United States)

    Taylor, Jonathan W.; Choularton, Thomas W.; Blyth, Alan M.; Flynn, Michael J.; Williams, Paul I.; Young, Gillian; Bower, Keith N.; Crosier, Jonathan; Gallagher, Martin W.; Dorsey, James R.; Liu, Zixia; Rosenberg, Philip D.

    2016-09-01

    Heavy rainfall from convective clouds can lead to devastating flash flooding, and observations of aerosols and clouds are required to improve cloud parameterisations used in precipitation forecasts. We present measurements of boundary layer aerosol concentration, size, and composition from a series of research flights performed over the southwest peninsula of the UK during the COnvective Precipitation Experiment (COPE) of summer 2013. We place emphasis on periods of southwesterly winds, which locally are most conducive to convective cloud formation, when marine air from the Atlantic reached the peninsula. Accumulation-mode aerosol mass loadings were typically 2-3 µg m-3 (corrected to standard cubic metres at 1013.25 hPa and 273.15 K), the majority of which was sulfuric acid over the sea, or ammonium sulfate inland, as terrestrial ammonia sources neutralised the aerosol. The cloud condensation nuclei (CCN) concentrations in these conditions were ˜ 150-280 cm-3 at 0.1 % and 400-500 cm-3 at 0.9 % supersaturation (SST), which are in good agreement with previous Atlantic measurements, and the cloud drop concentrations at cloud base ranged from 100 to 500 cm-3. The concentration of CCN at 0.1 % SST was well correlated with non-sea-salt sulfate, meaning marine sulfate formation was likely the main source of CCN. Marine organic aerosol (OA) had a similar mass spectrum to previous measurements of sea spray OA and was poorly correlated with CCN. In one case study that was significantly different to the rest, polluted anthropogenic emissions from the southern and central UK advected to the peninsula, with significant enhancements of OA, ammonium nitrate and sulfate, and black carbon. The CCN concentrations here were around 6 times higher than in the clean cases, and the cloud drop number concentrations were 3-4 times higher. Sources of ice-nucleating particles (INPs) were assessed by comparing different parameterisations used to predict INP concentrations, using measured

  10. Bulk Nuclear Properties from Reactions

    OpenAIRE

    Danielewicz, P.

    2002-01-01

    Extraction of bulk nuclear properties by comparing reaction observables to results from semiclassical transport-model simulations is discussed. Specific properties include the nuclear viscosity, incompressibility and constraints on the nuclear pressure at supranormal densities.

  11. Characterization of the S. cerevisiae inp51 mutant links phosphatidylinositol 4,5-bisphosphate levels with lipid content, membrane fluidity and cold growth.

    Science.gov (United States)

    Córcoles-Sáez, Isaac; Hernández, Maria Luisa; Martínez-Rivas, Jose Manuel; Prieto, Jose A; Randez-Gil, Francisca

    2016-03-01

    Phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] and its derivatives diphosphoinositol phosphates (DPIPs) play key signaling and regulatory roles. However, a direct function of these molecules in lipid and membrane homeostasis remains obscure. Here, we have studied the cold tolerance phenotype of yeast cells lacking the Inp51-mediated phosphoinositide-5-phosphatase. Genetic and biochemical approaches showed that increased metabolism of PI(4,5)P2 reduces the activity of the Pho85 kinase by increasing the levels of the DPIP isomer 1-IP7. This effect was key in the cold tolerance phenotype. Indeed, pho85 mutant cells grew better than the wild-type at 15 °C, and lack of this kinase abolished the inp51-mediated cold phenotype. Remarkably, reduced Pho85 function by loss of Inp51 affected the activity of the Pho85-regulated target Pah1, the yeast phosphatidate phosphatase. Cells lacking Inp51 showed reduced Pah1 abundance, derepression of an INO1-lacZ reporter, decreased content of triacylglycerides and elevated levels of phosphatidate, hallmarks of the pah1 mutant. However, the inp51 phenotype was not associated to low Pah1 activity since deletion of PAH1 caused cold sensitivity. In addition, the inp51 mutant exhibited features not shared by pah1, including a 40%-reduction in total lipid content and decreased membrane fluidity. These changes may influence the activity of membrane-anchored and/or associated proteins since deletion of INP51 slows down the transit to the vacuole of the fluorescent dye FM4-64. In conclusion, our work supports a model in which changes in the PI(4,5)P2 pool affect the 1-IP7 levels modulating the activity of Pho85, Pah1 and likely additional Pho85-controlled targets, and regulate lipid composition and membrane properties. PMID:26724696

  12. TiO{sub 2} as gate oxide on enhancement-mode N-channel sulfur-treated InP MOSFET

    Energy Technology Data Exchange (ETDEWEB)

    Lee, M.K.; Yen, C.F. [National Sun Yat-sen Univ., Taiwan (China). Dept. of Electrical Engineering

    2010-07-01

    This presentation discussed the use of titanium dioxide (TiO{sub 2}) in fuel cells as cathodes and catalysts, with particular reference to the feasibility of using TiO{sub 2} as the gate oxide in a MOSFET to make the integration more compact. An experiment was conducted aimed at fabricating an enhancement-mode n-channel sulfur-treated indium phosphide (InP) MOSFET with liquid phase deposition (LPD)-TiO{sub 2} as gate oxide. The TiO-2 film prepared by LPD on ammonium sulfide treated InP showed good electrical characteristics. The leakage currents can reach 2.1 x 10{sup -7} and 7.4 x 10{sup -7} A/cm{sup 2} at {+-}0.5 MV/cm. The fabricated enhancement-mode n-channel InP MOSFET exhibited the transconductance of 43 mS/mm and the electron field mobility of 348 cm{sup 2}/V s. The transconductance of MOSFET was higher with higher dielectric constant TiO{sub 2} as the gate oxide. Treatment of (NH{sub 4})2Sx prevented InP from oxidizing after cleaning and improved the interface properties of the MOS structure. Amorphous TiO{sub 2} film prepared by LPD can be deposited on InP substrate at near room temperature and can prevent the leakage current from the grain boundaries of polycrystalline structure. In this study, Zn doped p-type InP was used as the substrate. After cleaning and sulfidation, the InP was ready for MOSFET process. An aqueous solution of H{sub 2}TiF{sub 6} was used as the TiO{sub 2} deposition solution. It was concluded that the LPD-TiO2/S-InP capacitor had lower leakage current, higher k value, and lower Dit. 4 refs., 6 figs.

  13. Phosphazene like film formation on InP in liquid ammonia (223 K)

    International Nuclear Information System (INIS)

    An anodic photo-galvanostatic treatment at low current density (1 μA·cm−2) is carried out on n-InP semiconductor in liquid ammonia (223 K). The gradual chemical evolution of the surface is studied as a function of the anodic charge. Proof and reproducibility of the chemical transformation of the surface are clearly evidenced by X-ray photoelectron spectroscopy (XPS) analyses. Like by cyclic voltammetry, the perfect coverage of the InP surface by a thin phosphazene like film is also revealed by XPS data. However, a low anodic charge (≈ 0.5 mC·cm−2) is required by photo-galvanostatic treatment while a higher anodic charge (≈ 7 mC·cm−2) is involved by cyclic voltammetry. The excess of charge could be related to ammonia oxidation during the formation of the passivating film. This result proves the electrochemical oxidation of the solvent as a determinant step of the mechanism film formation. - Highlights: ► Cyclic voltammetry and galvanostatic modes on n-InP in liquid ammonia (223 K). ► A thin film growth is reached by photo-anodic polarization. ► The same phosphazene like film is evidenced by X-ray photoelectron spectroscopy. ► An excess of charge is observed by cyclic voltammetry. ► An electrochemical oxidation step of the solvent is assumed

  14. Improved Power Conversion Efficiency of InP Solar Cells Using Organic Window Layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, N; Lee, K.; Renshaw, C. K.; Xiao, X.; Forrest, Stephen R.

    2011-01-01

    We employ the organic semiconductor 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) as a nanometer thick window layer for p-InP/indium tin oxide (ITO) Schottky barrierdiodesolar cells. The power conversion efficiency is enhanced compared to ITO/InP cells lacking the PTCDA window layer, primarily due to neutralizing InP surface state charges via hole injection from the PTCDA. This leads to an increased ITO/p-InP Schottky barrier height, and hence to an increased open circuit voltage. The power conversion efficiency of the cells increases from 13.2±0.5% for the ITO/InP cell to 15.4±0.4% for the ITO/4 nm PTCDA/p-InP cell under 1 sun, AM1.5G simulated solar illumination. The PTCDA window layer is also shown to contribute to the photocurrent by light absorption followed by exciton dissociation at the organic/inorganic semiconductor interface.

  15. Passive and electro-optic polymer photonics and InP electronics integration

    Science.gov (United States)

    Zhang, Z.; Katopodis, V.; Groumas, P.; Konczykowska, A.; Dupuy, J.-.; Beretta, A.; Dede, A.; Miller, E.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Dinu, R.; Cangini, G.; Vannucci, A.; Felipe, D.; Maese-Novo, A.; Keil, N.; Bach, H.-.; Schell, Martin; Avramopoulos, H.; Kouloumentas, Ch.

    2015-05-01

    Hybrid photonic integration allows individual components to be developed at their best-suited material platforms without sacrificing the overall performance. In the past few years a polymer-enabled hybrid integration platform has been established, comprising 1) EO polymers for constructing low-complexity and low-cost Mach-Zehnder modulators (MZMs) with extremely high modulation bandwidth; 2) InP components for light sources, detectors, and high-speed electronics including MUX drivers and DEMUX circuits; 3) Ceramic (AIN) RF board that links the electronic signals within the package. On this platform, advanced optoelectronic modules have been demonstrated, including serial 100 Gb/s [1] and 2x100 Gb/s [2] optical transmitters, but also 400 Gb/s optoelectronic interfaces for intra-data center networks [3]. To expand the device functionalities to an unprecedented level and at the same time improve the integration compatibility with diversified active / passive photonic components, we have added a passive polymer-based photonic board (polyboard) as the 4th material system. This passive polyboard allows for low-cost fabrication of single-mode waveguide networks, enables fast and convenient integration of various thin-film elements (TFEs) to control the light polarization, and provides efficient thermo-optic elements (TOEs) for wavelength tuning, light amplitude regulation and light-path switching.

  16. Doping evaluation of InP nanowires for tandem junction solar cells

    Science.gov (United States)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  17. Optical investigations of single pairs of vertically stacked asymmetric InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Reischle, Matthias; Beirne, Gareth; Rossbach, Robert; Jetter, Michael; Michler, Peter [Institut fuer Strahlenphysik, Allmandring 3, 70569 Stuttgart (Germany); Schweizer, Heinz [4. Physikalisches Institut, Pfaffenwaldring 57, 70569 Stuttgart (Germany)

    2007-07-01

    Coupled quantum dots (QD) are interesting candidates for future devices, such as, quantum gates for quantum computers. While most of the previous studies concentrated on double dot systems with similar dot sizes relatively few studies have concentrated on asymmetric quantum dot pairs. Nevertheless, this system is easier to realize, as QDs naturally exhibit size inhomogeneities. Single vertically stacked pairs of InP QDs that are separated by different barrier widths have been investigated. We could, on average, produce smaller upper dots that emit at higher energies than the bottom layer of dots. This arrangement allows for the tunneling of carriers from the small dots to the large dots. We have found that coupling is clearly present for a small barrier width, while for a large barrier width the dots are found to act independently. A transition from primarily electron tunneling to exciton tunneling with decreasing barrier width has also been found by comparing the photoluminescence spectra. In addition, from time-resolved measurements we could estimate the tunneling times which are in accordance with those presented previously in the literature. Finally we simulate our results using a simple rate equation model which supports the proposed tunneling mechanism.

  18. Low-temperature damage formation in ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany); Stonert, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Turos, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Wesch, W. [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)

    2013-07-15

    Damage formation in ion implanted InP is studied by quasi–in situ Rutherford backscattering spectrometry (RBS) in channelling configuration. Subsequent implantation steps are performed at 15 K each followed by immediate RBS analysis without changing the environment or the temperature of the sample. 30 keV He, 150 keV N and 350 keV Ca ions were applied. The depth distribution of damage is in good agreement with that calculated with the SRIM code. The evolution of damage at the maximum of the distribution as a function of the ion fluence is described assuming damage formation within single ion impacts and stimulated growth of damage when the collision cascades start to overlap with cross sections σ{sub d} and σ{sub g}, respectively. These cross sections are found to depend on the primary energies deposited in the displacement of lattice atoms and in electronic interactions calculated with the SRIM code. The obtained empirical formulas are capable to represent the experimental results for different III–V compounds implanted at 15 K with various ion species.

  19. SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar + ion sputtering

    Science.gov (United States)

    Robert-Goumet, C.; Monier, G.; Zefack, B.; Chelda, S.; Bideux, L.; Gruzza, B.; Awitor, O. K.

    2009-10-01

    The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes on InP(1 0 0) surfaces by low Ar + ion sputtering process in UHV conditions from anodized aluminum oxide (AAO) templates. This process is a promising approach in creating ordered arrays of surface nanostructures with controllable size and morphology. To follow the Ar + ion sputtering effects on the AAO/InP surfaces, X-ray photoelectron spectroscopy (XPS) was used to determine the different surface species. In 4d and P 2p core level spectra were recorded on different InP(1 0 0) surfaces after ions bombardment. XPS results showed the presence of metallic indium on both smooth InP(1 0 0) and AAO/InP(1 0 0) surfaces. Finally, we showed that this experiment led to the formation of metallic In dropplets about 10 nm in diameter on nanoholes patterned InP surface while the as-received InP(1 0 0) surface generated metallic In about 60 nm in diameter.

  20. Looking for a bulk point

    CERN Document Server

    Maldacena, Juan; Zhiboedov, Alexander

    2015-01-01

    We consider Lorentzian correlators of local operators. In perturbation theory, singularities occur when we can draw a position-space Landau diagram with null lines. In theories with gravity duals, we can also draw Landau diagrams in the bulk. We argue that certain singularities can arise only from bulk diagrams, not from boundary diagrams. As has been previously observed, these singularities are a clear diagnostic of bulk locality. We analyze some properties of these perturbative singularities and discuss their relation to the OPE and the dimensions of double-trace operators. In the exact nonperturbative theory, we expect no singularity at these locations. We prove this statement in 1+1 dimensions by CFT methods.

  1. Bulk Viscosity of Interacting Hadrons

    OpenAIRE

    Wiranata, A.; M. Prakash

    2009-01-01

    We show that first approximations to the bulk viscosity $\\eta_v$ are expressible in terms of factors that depend on the sound speed $v_s$, the enthalpy, and the interaction (elastic and inelastic) cross section. The explicit dependence of $\\eta_v$ on the factor $(\\frac 13 - v_s^2)$ is demonstrated in the Chapman-Enskog approximation as well as the variational and relaxation time approaches. The interesting feature of bulk viscosity is that the dominant contributions at a given temperature ari...

  2. Bulk Viscosity of Interacting Hadrons

    CERN Document Server

    Wiranata, A

    2009-01-01

    We show that first approximations to the bulk viscosity $\\eta_v$ are expressible in terms of factors that depend on the sound speed $v_s$, the enthalpy, and the interaction (elastic and inelastic) cross section. The explicit dependence of $\\eta_v$ on the factor $(\\frac 13 - v_s^2)$ is demonstrated in the Chapman-Enskog approximation as well as the variational and relaxation time approaches. The interesting feature of bulk viscosity is that the dominant contributions at a given temperature arise from particles which are neither extremely nonrelativistic nor extremely relativistic. Numerical results for a model binary mixture are reported.

  3. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  4. Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

    Science.gov (United States)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

  5. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  6. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  7. Determination of the complex linear electro-optic coefficient of GaAs and InP

    Energy Technology Data Exchange (ETDEWEB)

    Pristovsek, Markus [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-08-15

    The complex linear electro-optic coefficient d{sub 41} was determined for the first time above the fundamental band gap of GaAs and InP by measuring the doping induced band bending of several oxidized samples in reflectance anisotropy spectroscopy. From the real and imaginary part of the change of the spectra for different carrier concentrations the spectral change of d{sub 41} was calculated. This is the first determination of the imaginary part Im(d{sub 41}). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. 110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate

    OpenAIRE

    Masuda, Satoshi; Kira, Hidehiko; Hirose, Tatsuya

    2004-01-01

    A high-gain amplifier monolithic microwave integrated circuit (MMIC) was developed using InP HEMT technology with inverted microstrip lines. The six-stage amplifier demonstrated a gain of 30 dB at 110 GHz. We also fabricated a resin-sealed flip-chip MMIC on a highly isolated cost-effective glass-epoxy substrate, achieving a gain of 28 dB at 110 GHz. To the best of our knowledge, this is the highest gain in the W-band for a flip-chip MMIC sealed with resin.

  9. Bulk viscosity and deflationary universes

    CERN Document Server

    Lima, J A S; Waga, I

    2007-01-01

    We analyze the conditions that make possible the description of entropy generation in the new inflationary model by means of a nearequilibrium process. We show that there are situations in which the bulk viscosity cannot describe particle production during the coherent field oscillations phase.

  10. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja;

    2009-01-01

    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise i...

  11. Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    In situ, real-time monitoring of InP atomic layer epitaxy (ALE) was performed in low-pressure metalorganic chemical vapor deposition (LP-MOCVD) by surface photoabsorption (SPA). A self-limiting adsorption condition was obtained from the trimethylindium (TMIn) decomposition experiment at various conditions. It was found that the growth rate was less than 1 monolayer (ML)/cycle. From the in situ, real-time SPA measurement during InP ALE, the incomplete PH sub 3 decomposition on the methyl-terminated In surface was attributed to the self-limiting submonolayer growth per cycle.

  12. Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    International Nuclear Information System (INIS)

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 x 1017 cm-3 and 1 x 1018 cm-3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H2 and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  13. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten;

    2006-01-01

    Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a fl....... Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits.......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

  14. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

    Science.gov (United States)

    Cavalli, Alessandro; Wang, Jia; Esmaeil Zadeh, Iman; Reimer, Michael E; Verheijen, Marcel A; Soini, Martin; Plissard, Sebastien R; Zwiller, Val; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-05-11

    Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth. PMID:27045232

  15. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    International Nuclear Information System (INIS)

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm−2 K−2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  16. Vertical and Smooth, etching of InP by Cl2/CH4/Ar Inductively Coupled Plasma at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    孙长征; 周进波; 熊兵; 王健; 罗毅

    2003-01-01

    We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.

  17. Coulombic Fluids Bulk and Interfaces

    CERN Document Server

    Freyland, Werner

    2011-01-01

    Ionic liquids have attracted considerable interest in recent years. In this book the bulk and interfacial physico-chemical characteristics of various fluid systems dominated by Coulomb interactions are treated which includes molten salts, ionic liquids as well as metal-molten salt mixtures and expanded fluid metals. Of particular interest is the comparison of the different systems. Topics in the bulk phase concern the microscopic structure, the phase behaviour and critical phenomena, and the metal-nonmetal transition. Interfacial phenomena include wetting transitions, electrowetting, surface freezing, and the electrified ionic liquid/ electrode interface. With regard to the latter 2D and 3D electrochemical phase formation of metals and semi-conductors on the nanometer scale is described for a number of selected examples. The basic concepts and various experimental methods are introduced making the book suitable for both graduate students and researchers interested in Coulombic fluids.

  18. Bulk Superconductors in Mobile Application

    Science.gov (United States)

    Werfel, F. N.; Delor, U. Floegel-; Rothfeld, R.; Riedel, T.; Wippich, D.; Goebel, B.; Schirrmeister, P.

    We investigate and review concepts of multi - seeded REBCO bulk superconductors in mobile application. ATZ's compact HTS bulk magnets can trap routinely 1 T@77 K. Except of magnetization, flux creep and hysteresis, industrial - like properties as compactness, power density, and robustness are of major device interest if mobility and light-weight construction is in focus. For mobile application in levitated trains or demonstrator magnets we examine the performance of on-board cryogenics either by LN2 or cryo-cooler application. The mechanical, electric and thermodynamical requirements of compact vacuum cryostats for Maglev train operation were studied systematically. More than 30 units are manufactured and tested. The attractive load to weight ratio is more than 10 and favours group module device constructions up to 5 t load on permanent magnet (PM) track. A transportable and compact YBCO bulk magnet cooled with in-situ 4 Watt Stirling cryo-cooler for 50 - 80 K operation is investigated. Low cooling power and effective HTS cold mass drives the system construction to a minimum - thermal loss and light-weight design.

  19. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results.

    Science.gov (United States)

    Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro

    2014-05-16

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  20. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results

    International Nuclear Information System (INIS)

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In0.48Ga0.52P buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, k-vector ⋅ p-vector bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband k-vector ⋅ p-vector approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  1. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2013-01-01

    containing three time constants, that we interpret as the effects of fast carrier diffusion from an initially localized carrier distribution and the slower effects of surface recombination and bulk recombination. The variation of the time constants with parameters characterizing the nanocavity structure is...

  2. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin, E-mail: weix@red.semi.ac.cn [Nano-optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jietao [School of Physics and Optoelectronic Engineering, Xidian University, Xi' an, Shannxi 710071 (China)

    2015-05-28

    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.

  3. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1.

    Directory of Open Access Journals (Sweden)

    Sarah H Reeder

    2016-05-01

    Full Text Available Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures-openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores-the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them.

  4. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1.

    Science.gov (United States)

    Reeder, Sarah H; Lee, Byung Ha; Fox, Ronald; Dobritsa, Anna A

    2016-05-01

    Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures-openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores-the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them. PMID:27177036

  5. Passive and electro-optic polymer photonics and InP electronics integration for multi-flow terabit transceivers at edge SDN switches and data-center gateways

    DEFF Research Database (Denmark)

    Avramopoulos, Hercules; Katopodis, V.; Groumas, P.;

    2014-01-01

    electro-optic with passive polymers and we develop a novel photonic integration platform with unprecedented potential for high-speed modulation and optical functionality on-chip. We also rely on the combination of polymers with InP elements and the use of InP-DHBT electronics for driving circuits based...

  6. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.;

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  7. Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel;

    2014-01-01

    Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...

  8. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Science.gov (United States)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  9. Beam emittance forming line of the cw race-track microtron of the Institute of Nuclear Physics of Moscow State University (INP MSU)

    Energy Technology Data Exchange (ETDEWEB)

    Alimov, A.S.; Gevorkyan, V.G.; Gorbatov, Yu.I.; Gribov, I.V.; Ibadov, A.Kh.; Ishkhanov, B.S.; Korneenkov, V.A.; Lazutin, E.V.; Makulbekov, E.A.; Piskarev, I.M.

    1989-06-01

    The transverse and longitudinal emittance forming line (EFL) of the race-track microtron of INP MSU is described. The work presents the principles of operation, parameters of EFL elements, description of rf power supply system and automated control system. The method of EFL tuning and experimental results are discussed.

  10. Iron - based bulk amorphous alloys

    Directory of Open Access Journals (Sweden)

    R. Babilas

    2010-07-01

    Full Text Available Purpose: The paper presents a structure characterization, thermal and soft magnetic properties analysis of Fe-based bulk amorphous materials in as-cast state and after crystallization process. In addition, the paper gives some brief review about achieving, formation and structure of bulk metallic glasses as a special group of amorphous materials.Design/methodology/approach: The studies were performed on Fe72B20Si4Nb4 metallic glass in form of ribbons and rods. The amorphous structure of tested samples was examined by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM methods. The thermal properties of the glassy samples were measured using differential thermal analysis (DTA and differential scanning calorimetry (DSC. The magnetic properties contained initial and maximum magnetic permeability, coercive force and magnetic after-effects measurements were determined by the Maxwell-Wien bridge and VSM methods.Findings: The X-ray diffraction and transmission electron microscopy investigations revealed that the studied as-cast bulk metallic glasses in form of ribbons and rods were amorphous. Two stage crystallization process was observed for studied bulk amorphous alloy. The differences of crystallization temperature between ribbons and rods with chosen thickness are probably caused by different amorphous structures as a result of the different cooling rates in casting process. The SEM images showed that studied fractures could be classified as mixed fractures with indicated two zones contained “river” and “smooth” areas. The changing of chosen soft magnetic properties (μr, Bs, Hc obtained for samples with different thickness is a result of the non-homogenous amorphous structure of tested metallic glasses. The annealing process in temperature range from 373 to 773 K causes structural relaxation of tested amorphous materials, which leads to changes in their physical properties. The qualitative

  11. Development of novel n{sup +}-in-p Silicon Planar Pixel Sensors for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Unno, Y., E-mail: yoshinobu.unno@kek.jp [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Gallrapp, C. [European Organization for Nuclear Research (CERN), CH-1211, Geneve 23 (Switzerland); Hori, R. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Idarraga, J. [Institut Universitaire de Technologie d' Orsay, Universite de Paris Sud, plateau de Moulon, 91400 Orsay (France); Mitsui, S. [The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Nagai, R.; Kishida, T. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Ishida, A.; Ishihara, M.; Kamada, S.; Inuzuka, T.; Yamamura, K. [Solid-State Division, Hamamatsu Photonics K.K., 1126-1 Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Hara, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Ikegami, Y. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Lounis, A. [Institut Universitaire de Technologie d' Orsay, Universite de Paris Sud, plateau de Moulon, 91400 Orsay (France); Takahashi, Y. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Takubo, Y.; Terada, S. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Hanagaki, K. [Department of Physics, Osaka University, Machikaneyama-cho, Toyonaka-shi, Osaka 560-0043 (Japan); and others

    2013-01-21

    We have been developing highly radiation-tolerant n{sup +}-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n{sup +}-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses (320μm or 150μm). The 1-chip pixel modules with thin FE-I4 pixel sensors were evaluated using test beams, before and after 2×10{sup 15}n{sub eq}/cm{sup 2} irradiation. The full depletion voltages were estimated to be 44±10 V and 380±70 V, in the non-irradiated and the irradiated modules, respectively. A reduction of efficiency was observed in the vicinity of the four pixel corners and underneath the bias rail after the irradiation. The global efficiencies were >99% and >95% in the non-irradiated and the irradiated modules, respectively. The collected charges were uniform in the depth direction at bias voltages well above the full depletion voltages. The encapsulation of vulnerable edges with adhesive or parylene prevented HV sparking. Bump bonding with the SnAg solder bumps was performed at HPK with 150μm- and 320μm-thick sensors and chips. No disconnection of bumps was observed after 10 thermal cycles between −40 and +50 °C, with a temperature slew rate of >70K/min. -- Highlights: ► Novel n{sup +}-in-p pixel sensors were made of punch-through/poly-Si biasing, p-stop/p-spray isolation, and 320/150μm thickness. ► The thin pixel modules were evaluated in testbeams, before and after 2×10{sup 15}n{sub eq}/cm{sup 2} irradiation. ► A reduction of efficiency was observed in the vicinity of four-corners of pixels and underneath the bias rail after irradiation. ► Encapsulating the vulnerable edges with adhesive or parylene achieved prevention of HV sparking up to 1000 V. ► No disconnection of SnAg bump-bonds was observed in dummy modules after 10 thermal cycles with a slew rate of >70K/min.

  12. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  13. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

    Science.gov (United States)

    Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, Longfei; Smalbrugge, Barry; Geluk, Erik Jan; Smit, Meint; van der Tol, Jos

    2014-03-15

    In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

  14. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect

    Institute of Scientific and Technical Information of China (English)

    GE Ji; JIN Zhi; SU Yong-Bo; CHENG Wei; WANG Xian-Wai; CHEN Gao-Peng; LIU Xin-Yu

    2009-01-01

    We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As a result, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.

  15. Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

    Science.gov (United States)

    Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

    2012-12-17

    A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

  16. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    International Nuclear Information System (INIS)

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In0.48Ga0.52 P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k→·p→ bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots

  17. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    Energy Technology Data Exchange (ETDEWEB)

    Barettin, Daniele, E-mail: Daniele.Barettin@uniroma2.it; Auf der Maur, Matthias [Department of Electronic Engineering, University of Rome “Tor Vergata,” Via del Politecnico 1, 00133, Rome (Italy); De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro [Department of Industrial Engineering, University of Rome Tor Vergata, Via del Politecnico 1 00133 Rome, Italy and INSTM, Unitá di ricerca dell' Universitá di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133, Rome (Italy); Pecchia, Alessandro [CNR-ISMN, via Salaria Km. 29.300, 00017 Monterotondo, Rome (Italy)

    2015-03-07

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

  18. Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

    Science.gov (United States)

    Malina, V.; Moro, L.; Micheli, V.; Mojzes, I.

    1996-07-01

    An attempt has been made to improve the electrical and metallurgical stability of Au - Be alloyed contacts to moderately doped p-type InP by minimizing the thickness of the Au - Be contact layer and using an Ru layer as a new, more effective diffusion barrier between the Au - Be and a thick Au top layer. It was found that the Au - Be contact layer only 40 - 50 nm thick is sufficient to give excellent ohmic contacts with specific contact resistance values as low as 0268-1242/11/7/025/img6 and 0268-1242/11/7/025/img7 (for 0268-1242/11/7/025/img8 and 0268-1242/11/7/025/img9 respectively). When subjected to an aging test at 0268-1242/11/7/025/img10 for 50 h in 0268-1242/11/7/025/img11 gas, the 50 nm Au - Be/50 nm Ru/300 nm Au contacts alloyed at an optimum temperature of about 0268-1242/11/7/025/img12 exhibit good thermal stability and no substantial increase in the specific contact resistance. The remarkable metallurgical stability of such contacts was confirmed by secondary neutral mass spectroscopy (SNMS) in-depth profile measurements. A comparison with the previously investigated diffusion barrier metals (such as Cr, Ti, Pt, etc) shows that the Ru layer is a much better barrier against the migration of Au into the InP substrate and, at the same time, it suppresses the out-diffusion of In and P from the semiconductor.

  19. Handling of bulk solids theory and practice

    CERN Document Server

    Shamlou, P A

    1990-01-01

    Handling of Bulk Solids provides a comprehensive discussion of the field of solids flow and handling in the process industries. Presentation of the subject follows classical lines of separate discussions for each topic, so each chapter is self-contained and can be read on its own. Topics discussed include bulk solids flow and handling properties; pressure profiles in bulk solids storage vessels; the design of storage silos for reliable discharge of bulk materials; gravity flow of particulate materials from storage vessels; pneumatic transportation of bulk solids; and the hazards of solid-mater

  20. New fermions in the bulk

    CERN Document Server

    de Brito, K P S

    2016-01-01

    Spinor fields on 5-dimensional Lorentzian manifolds are classified, according to the geometric Fierz identities that involve their bilinear covariants. Based upon this classification that generalises the celebrated 4-dimensional Lounesto classification of spinor fields, new non-trivial classes of 5-dimensional spinor fields are, hence, found, with important potential applications regarding bulk fermions and their subsequent localisation on brane-worlds. In addition, quaternionic bilinear covariants are used to derive the quaternionic spin density, through the truncated exterior bundle. In order to accomplish a realisation of these new spinors, a Killing vector field is constructed on the horizon of 5-dimensional Kerr black holes. This Killing vector field is shown to reach the time-like Killing vector field at the spatial infinity, through a current 1-form density, constructed with the derived new spinor fields. The current density is, moreover, expressed as the f\\"unfbein components, assuming a condensed for...

  1. Ordered bulk degradation via autophagy

    DEFF Research Database (Denmark)

    Dengjel, Jörn; Kristensen, Anders Riis; Andersen, Jens S

    2008-01-01

    During amino acid starvation, cells undergo macroautophagy which is regarded as an unspecific bulk degradation process. Lately, more and more organelle-specific autophagy subtypes such as reticulophagy, mitophagy and ribophagy have been described and it could be shown, depending on the experimental...... setup, that autophagy specifically can remove certain subcellular components. We used an unbiased quantitative proteomics approach relying on stable isotope labeling by amino acids in cell culture (SILAC) to study global protein dynamics during amino acid starvation-induced autophagy. Looking...... at proteasomal and lysosomal degradation ample cross-talk between the two degradation pathways became evident. Degradation via autophagy appeared to be ordered and regulated at the protein complex/organelle level. This raises several important questions such as: can macroautophagy itself be specific and what...

  2. Microwave disinfestation of bulk timber.

    Science.gov (United States)

    Plaza, Pedro Jose; Zona, Angela Tatiana; Sanchís, Raul; Balbastre, Juan Vicente; Martínez, Antonio; Muñoz, Eva Maria; Gordillo, Javier; de los Reyes, Elías

    2007-01-01

    In this paper a complete microwave system for bulk timber disinfestation is developed and tested. A commercial FEM simulator has been used to design the applicator, looking for structures providing uniform field distributions, which is a factor of capital relevance for a successful treatment. Special attention has also been given to the reduction of electromagnetic energy leakage. A dual polarized cylindrical applicator with a corrugated flange has been designed. The applicator has also been numerically tested emulating some real-life operating conditions. A prototype has been built using two low-cost magnetrons of 900 W and high power coaxial cables and it has been tested inside a shielded semianechoic chamber. The tests have been carried out in three stages: validation of the applicator design, determination of the lethal dosage as a function of the insect position and the maximum wood temperature allowed and statement of safe operation procedures. PMID:18351001

  3. Isotopic signatures by bulk analyses

    International Nuclear Information System (INIS)

    Los Alamos National Laboratory has developed a series of measurement techniques for identification of nuclear signatures by analyzing bulk samples. Two specific applications for isotopic fingerprinting to identify the origin of anthropogenic radioactivity in bulk samples are presented. The first example is the analyses of environmental samples collected in the US Arctic to determine the impact of dumping of radionuclides in this polar region. Analyses of sediment and biota samples indicate that for the areas sampled the anthropogenic radionuclide content of sediments was predominantly the result of the deposition of global fallout. The anthropogenic radionuclide concentrations in fish, birds and mammals were very low. It can be surmised that marine food chains are presently not significantly affected. The second example is isotopic fingerprinting of water and sediment samples from the Rocky Flats Facility (RFP). The largest source of anthropogenic radioactivity presently affecting surface-waters at RFP is the sediments that are currently residing in the holding ponds. One gram of sediment from a holding pond contains approximately 50 times more plutonium than 1 liter of water from the pond. Essentially 100% of the uranium in Ponds A-1 and A-2 originated as depleted uranium. The largest source of radioactivity in the terminal Ponds A-4, B-5 and C-2 was naturally occurring uranium and its decay product radium. The uranium concentrations in the waters collected from the terminal ponds contained 0.05% or less of the interim standard calculated derived concentration guide for uranium in waters available to the public. All of the radioactivity observed in soil, sediment and water samples collected at RFP was naturally occurring, the result of processes at RFP or the result of global fallout. No extraneous anthropogenic alpha, beta or gamma activities were detected. The plutonium concentrations in Pond C-2 appear to vary seasonally

  4. Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

    International Nuclear Information System (INIS)

    The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥104 V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2+) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0±0.6) x 10-14 cm2. (orig.)

  5. Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch

    Institute of Scientific and Technical Information of China (English)

    施卫; 马湘蓉

    2011-01-01

    Unique experimental phenomena are discovered in a large gap semiinsulating(SI)GaAs photoconductive semiconductor switch(PCSS)and the peculiar transmission characteristics are exhibited in the experiment.The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS.By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS,a detailed statistical analysis and theoretical explanations are expounded.The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation(LSA)mode when the conditions of 5 × 104 s·cm-3 ≤ no/f ≤ 3 × 105 s.cm-3 and noL ≥ 1013 cm-2 must be met in the switch,with no being carrier concentration and f the frequency.The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in)behavior at high bias voltage,so the withstand voltage and service life for PCSS are improved.%Unique experimental phenomena are discovered in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch (PCSS) and the peculiar transmission characteristics are exhibited in the experiment. The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS. By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS, a detailed statistical analysis and theoretical explanations are expounded. The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation (LSA) mode when the conditions of 5 x 104 s-cm~3 1013 cm~2 must be met in the switch, with no being carrier concentration and f the frequency. The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in) behavior at high bias voltage, so the withstand voltage and service life for PCSS are improved.

  6. Tidal and subtidal flow patterns o a tropical continental shelf semi-insulated by coral reefs

    NARCIS (Netherlands)

    Tarya, A.; Hoitink, A.J.F.; Vegt, van der M.

    2010-01-01

    The present study sets out to describe the tidal and subtidal water motion at the Berau coastal shelf, which represents a tropical continental shelf area of variable width hosting a complex of barrier reefs along its oceanic edge. Moored and shipboard measurements on currents and turbulence were mad

  7. Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

  8. Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 107ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated

  9. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  10. Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

    Energy Technology Data Exchange (ETDEWEB)

    Hajlaoui, C., E-mail: hajlaouic@yahoo.fr; Pedesseau, L. [Université Européenne de Bretagne (France); Raouafi, F.; Ben Cheikh Larbi, F. [Université de Carthage, Laboratoire de Physico-Chimie, des Microstructures et des Microsystémes, Institut Préparatoire aux Études Scientifiques et Techniques (Tunisia); Even, J.; Jancu, J.-M. [Université Européenne de Bretagne (France)

    2015-08-15

    We report first-principle density functional calculations of the spontaneous polarization, piezoelectric stress constants, and elastic constants for the III–V wurtzite structure semiconductors InAs and InP. Using the density functional theory implemented in the VASP code, we obtain polarization values–0.011 and–0.013 C/m{sup 2}, and piezoelectric constants e{sub 33} (e{sub 31}) equal to 0.091 (–0.026) and 0.012 (–0.081) C/m{sup 2} for structurally relaxed InP and InAs respectively. These values are consistently smaller than those of nitrides. Therefore, we predict a smaller built-in electric field in such structures.

  11. Calculated performance of p(+)n InP solar cells with In(0.52)Al(0.48)As window layers

    Science.gov (United States)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    The performance of indium phosphide solar cells with lattice matched wide band-gap In(0.52)Al(0.48)As window layers was calculated using the PC-1D computer code. The conversion efficiency of p(+)n InP solar cells is improved significantly by the window layer. No improvement is seen for n(+)p structures. The improvement in InP cell efficiency was studied as a function of In(0.52)Al(0.48)As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current.For a typical In(0.52)Al(0.48)As window layer thickness of 20 nm, the cell efficiency improves in excess of 27 percent to a value of 18.74 percent.

  12. InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations

    Science.gov (United States)

    Schulz, Wolfgang-Michael; Roßbach, Robert; Reischle, Matthias; Beirne, Gareth J.; Jetter, Michael; Michler, Peter

    2009-04-01

    Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al0.50Ga0.50InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers.

  13. Multiple-Scattering of Near-Edge x-ray Absorption Fine Structure of Sulphur-Passivated InP(100) Surface

    Institute of Scientific and Technical Information of China (English)

    曹松; 唐景昌; 沈少来; 陈更生; 马丹

    2003-01-01

    We use the multiple-scattering cluster method to calculate the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 A and 3.05 A coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

  14. FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

    Science.gov (United States)

    Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

    2016-01-01

    This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

  15. Relative entropy equals bulk relative entropy

    CERN Document Server

    Jafferis, Daniel L; Maldacena, Juan; Suh, S Josephine

    2015-01-01

    We consider the gravity dual of the modular Hamiltonian associated to a general subregion of a boundary theory. We use it to argue that the relative entropy of nearby states is given by the relative entropy in the bulk, to leading order in the bulk gravitational coupling. We also argue that the boundary modular flow is dual to the bulk modular flow in the entanglement wedge, with implications for entanglement wedge reconstruction.

  16. Coupling brane fields to bulk supergravity

    Energy Technology Data Exchange (ETDEWEB)

    Parameswaran, Susha L. [Uppsala Univ. (Sweden). Theoretical Physics; Schmidt, Jonas [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2010-12-15

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  17. Coupling brane fields to bulk supergravity

    International Nuclear Information System (INIS)

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  18. Diagnosis of Dry Bulk Shipping Market

    Institute of Scientific and Technical Information of China (English)

    Wendy Wu

    2009-01-01

    @@ A sudden severe winter for dry bulk shipping market Since the second half of last year,dry bulk shipping market experienced a sudden and dramatical change which caught everyone off guard in just a few months'time.As the wind vane of dry bulk shipping market,BDI index(Baltic index)has been climbing higher and higher from the middle of 2005.It began to nearly shoot up into the 2007.

  19. The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP

    Directory of Open Access Journals (Sweden)

    Jean C Harmand

    2008-08-01

    Full Text Available The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.

  20. Bulk scalar field in DGP braneworld cosmology

    CERN Document Server

    Ansari, Rizwan ul Haq

    2007-01-01

    We investigated the effects of bulk scalar field in the braneworld cosmological scenario. The Friedmann equations and acceleration condition in presence of the bulk scalar field for a zero tension brane and cosmological constant are studied. In DGP model the effective Einstein equation on the brane is obtained with bulk scalar field. The rescaled bulk scalar field on the brane in the DGP model behaves as an effective four dimensional field, thus standard type cosmology is recovered. In present study of the DGP model, the late-time accelerating phase of the universe can be explained .

  1. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    Science.gov (United States)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  2. Effect of irradiation with reactor neutrons and the temperature of subsequent heat treatment on the structure of InP single crystals

    International Nuclear Information System (INIS)

    The results of studying the features of the effect of irradiation with fast and full-spectrum reactor neutrons and subsequent heat treatments on the structural characteristics of InP single crystals are reported. It is shown that, in contrast to other III-V semiconductor compounds, the lattice constant decreases in InP as a result of irradiation with neutrons. Fast neutrons make the major contribution to the variation in the lattice constant. The presence of the component of thermal neutrons that give rise to Sn atoms in the material does not bring about any appreciable variation in the lattice constant. Heat treatment of irradiated samples at temperatures as high as 600 deg. C leads to annealing of radiation defects and recovery of the lattice constant; in the samples irradiated with high neutron fluences, the lattice constant becomes even larger than that before irradiation. An analysis of the obtained experimental data made it possible to assume that the decrease in the InP lattice constant as a result of irradiation with neutrons is mainly caused by the introduction of the PIn antisite defects that give rise to an effect similar to that of vacancy-related defects

  3. Optical and structural properties of InP quantum dots embedded in (AlxGa1-x)0.51In0.49P

    Science.gov (United States)

    Schulz, W.-M.; Roßbach, R.; Reischle, M.; Beirne, G. J.; Bommer, M.; Jetter, M.; Michler, P.

    2009-01-01

    Within this work we present optical and structural properties of InP quantum dots embedded in (AlxGa1-x)0.51In0.49P barriers. Atomic force microscopy measurements show a mainly bimodal height distribution with aspect ratios (ratio of width to height) of about 10:1 and quantum dot heights of around 2 nm for the smaller quantum dot class (type A) and around 4 nm for the larger quantum dot class (type B). From ensemble-photoluminescence measurements we estimated thermal activation energies of up to 270 meV for the type-A quantum dots, resulting in a 300 times higher luminescence intensity at 200 K in comparison to our InP quantum dots in Ga0.51In0.49P at the same emission wavelength. Photon statistic measurements clearly display that InP quantum dots in (Al0.20Ga0.80)0.51In0.49P emit single photons up to 80 K, making them promising candidates for high-temperature single-photon emitters.

  4. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires. PMID:25050088

  5. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-06-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor ( RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  6. Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film

    Energy Technology Data Exchange (ETDEWEB)

    John Klopf

    2005-10-31

    Advancements in microfabrication techniques and thin film growth have led to complex integrated photonic devices, also known as optoelectronics. The performance of these devices relies upon precise control of the band gap and optical characteristics of the thin film structures, as well as a fundamental understanding of the photoexcited carrier thermalization, relaxation, and recombination processes. An optical pump-probe technique has been developed to measure the transient behavior of these processes on a sub-picosecond timescale. This method relies upon the generation of hot carriers by theabsorption of an intense ultrashort laser pulse (~ 135 fs). The transient changes in reflectance due to the pump pulse excitation are monitored using a weaker probe pulse. Control of the relative time delay between the pump and probe pulses allows for temporal measurements with resolution limited only by the pulse width. The transient change in reflectance is the result of a transient change in the carrier distribution. Observation of the reflectance response of indium phosphide (InP) and gallium arsenide (GaAs) films on a sub-picosecond timescale allows for detailed examination of thermalization and relaxation processes of the excited carriers. Longer timescales (> 100 ps) are useful for correlating the transient reflectance response to slower processes such as the diffusion and recombination of the photoexcited carriers. This research investigates the transient hot carrier processes in several InP and GaAs based films similar to those commonly used in optoelectronics. This technique is especially important as it provides a non-destructive means of evaluating these materials; whereas much of the research performed in this field has relied upon the measurement of transient changes in the transmission of transparent films. The process of preparing films that are transparent renders them unusable in functioning devices. This research should not only extend the understanding of

  7. Contribuição de diversos sistemas de observação na previsão de tempo no CPTEC/INPE Contribution of the several observation systems in the forecast skill at CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Rita V. Andreoli

    2008-06-01

    Full Text Available Experimentos utilizando sistemas de observação global, foram realizados excluindo um ou mais tipos de observação do esquema global de assimilação de dados/previsão de tempo do Centro de Previsão de Tempo e Estudos Climáticos do Instituto Nacional de Pesquisas Espaciais - CPTEC/INPE (Global Physical-space Statistical Analysis System - GPSAS. Estes experimentos indicam como efetivamente as observações são usadas no GPSAS. Os sistemas de observação testados foram o conjunto de dados convencionais, que incluem informações de superfície (estações em superfície, bóias, navios e plataformas oceânicas e de ar superior (radiossondagem, aeronaves e balões piloto, os sistemas de sondagem Advanced TIROS-N/NOAA Operational Vertical Sounder (ATOVS e AQUA, composto pelos sensores Atmospheric Infrared Sounder e Advanced Microwave Sounding Unit (AIRS/AMSU, dados de vento de satélite, estimados a partir do deslocamento de nuvens (Cloud Track Wind, dados de vento em superfície sobre o oceano (QuikScat e água precipitável (Total Precipitation water - TPW. Todos os sistemas testados mostram um impacto positivo na qualidade da previsão. Os dados convencionais têm um maior impacto na região do Hemisfério Norte devido à maior disponibilidade dessas informações sobre esta região. Por outro lado, as sondagens AIRS/AMSU são fundamentais para uma boa previsão sobre o Hemisfério Sul. Sobre a América do Sul, os perfis inferidos pelo sistema de sondagem AQUA contribuem com a mesma ordem de grandeza dos dados convencionais e apresentam um impacto positivo para todos os períodos de previsões analisados. Dados de vento e água precipitável estimados por satélites têm maior impacto nas regiões tropical e da América do Sul, nas primeiras horas de previsão (1-3 dias. Todavia, a utilização de um conjunto completo de observações é crucial para se obter, operacionalmente, uma boa condição inicial do estado atmosférico para ser

  8. 27 CFR 20.191 - Bulk articles.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of...

  9. Bulk equations of motion from CFT correlators

    CERN Document Server

    Kabat, Daniel

    2015-01-01

    To O(1/N) we derive, purely from CFT data, the bulk equations of motion for interacting scalar fields and for scalars coupled to gauge fields and gravity. We first uplift CFT operators to mimic local AdS fields by imposing bulk microcausality. This requires adding an infinite tower of smeared higher-dimension double-trace operators to the CFT definition of a bulk field, with coefficients that we explicitly compute. By summing the contribution of the higher-dimension operators we derive the equations of motion satisfied by these uplifted CFT operators and show that we precisely recover the expected bulk equations of motion. We exhibit the freedom in the CFT construction which corresponds to bulk field redefinitions.

  10. Impact of Pr on the properties of InP based layers for light sources and detectors

    Energy Technology Data Exchange (ETDEWEB)

    Prochazkova, Olga; Grym, Jan; Zavadil, Jiri; Zdansky, Karel; Yatskiv, Roman [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Prague (Czech Republic)

    2009-12-15

    We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10{sup 14} cm{sup -3}. Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using {alpha}-particles emitted from the {sup 241}Am radioactive source. The type III structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. Pr admixture was also exploited in the preparation of quaternary GaInAsP(Pr) active region in the double heterostructure GaInAsP/InP emitting at 1200 nm. Purification effect of Pr addition is demonstrated by measuring impurity concentrations deduced from C-V curves and by low temperature PL spectra. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Readout circuitry for continuous high-rate photon detection with arrays of InP Geiger-mode avalanche photodiodes

    Science.gov (United States)

    Frechette, Jonathan; Grossmann, Peter J.; Busacker, David E.; Jordy, George J.; Duerr, Erik K.; McIntosh, K. Alexander; Oakley, Douglas C.; Bailey, Robert J.; Ruff, Albert C.; Brattain, Michael A.; Funk, Joseph E.; MacDonald, Jason G.; Verghese, Simon

    2012-06-01

    An asynchronous readout integrated circuit (ROIC) has been developed for hybridization to a 32x32 array of single-photon sensitive avalanche photodiodes (APDs). The asynchronous ROIC is capable of simultaneous detection and readout of photon times of arrival, with no array blind time. Each pixel in the array is independently operated by a finite state machine that actively quenches an APD upon a photon detection event, and re-biases the device into Geiger mode after a programmable hold-off time. While an individual APD is in hold-off mode, other elements in the array are biased and available to detect photons. This approach enables high pixel refresh frequency (PRF), making the device suitable for applications including optical communications and frequency-agile ladar. A built-in electronic shutter that de-biases the whole array allows the detector to operate in a gated mode or allows for detection to be temporarily disabled. On-chip data reduction reduces the high bandwidth requirements of simultaneous detection and readout. Additional features include programmable single-pixel disable, region of interest processing, and programmable output data rates. State-based on-chip clock gating reduces overall power draw. ROIC operation has been demonstrated with hybridized InP APDs sensitive to 1.06-μm and 1.55-μm wavelength, and fully packaged focal plane arrays (FPAs) have been assembled and characterized.

  12. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: christophe.cardinaud@cnrs-imn.fr [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  13. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu; Lin Mei-Yu

    2013-01-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process.In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study.We use two chlorine-based etchants,one is HCl-based solution (HCl/H3PO4),and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP).The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall,whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall,and the over-etching is tiny on the top and the bottom of mesa.And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min,respectively.The measured data show that the current of Gunn diode by wet etching is lower than that by ICP,and the former has a higher threshold voltage.It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  14. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    Science.gov (United States)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2016-10-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  15. Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke

    2013-01-01

    In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can...... be employed to improve the power handling ability through optimizing the input impedance of the CB device. The minimized power mismatch between the CB and the common-emitter(CE) devices results in an improved saturated output power. To demonstrate the technique for power amplifier designs at mm-wave...... frequencies, a single-branch cascode based PA using single-finger devices and a two-way combined based PA using three-finger devices are fabricated. The single-branch design shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz and the two-way combined design shows a power...

  16. Atomic geometry, electronic states and possible hydrogen passivation of the InP(1 1 1)A surface

    Science.gov (United States)

    Chuasiripattana, K.; Srivastava, G. P.

    2006-08-01

    We present a first-principles theoretical study of the atomic geometry and electronics states of the InP(1 1 1)A surface under In- and P-rich conditions. The In-rich surface, characterised by an In vacancy per unit ( 2×2) cell, obeys the electron counting rule (ECR) and is semiconducting. Under P-rich conditions we have considered two surface reconstructions: ( 2×2) with 3/4 monolayer (ML) P coverage and ( √{3}×√{3}) with 1 ML coverage. In complete agreement with a recent experimental work by Li et al., it is found that the ( √{3}×√{3}) reconstruction is more stable than the ( 2×2) reconstruction. However, the ( √{3}×√{3}) reconstruction has a metallic band structure and thus does not satisfy the ECR. The stability of this reconstruction is explained to arise from a competition between the ECR and a significant elastic deformation in the surface region. We confirm the suggestion by Li et al. that this surface can be passivated both chemically as well as electronically with 1/4 ML coverage of hydrogen.

  17. P-H bonds in the reconstruction of P-rich InP(100) measured with FTIR

    Science.gov (United States)

    Letzig, T.; Willig, F.

    2006-08-01

    The reconstruction of P-rich InP(100) requires at least a (2x4) surface unit cell to stay semiconducting and uncharged (electron counting rule). Recently it has been shown that the much smaller (2x2) unit cell obtained from MOCVD (metalorganic vapor deposition) growth contains P-H bonds. Orientation and polarization dependent Fourier Transform Infrared Spectroscopy (FTIR) of the P-H bonds in the Attenuated Total Reflection (ATR) mode have confirmed the specific form of the (2x2) surface unit cell (T. Letzig et al., Phys. Rev. B 71 (2005) 033308) earlier proposed by W.G. Schmidt and coworkers (W.G. Schmidt et al., Phys. Rev. Lett. 90 (2003) 126101). Surface unit cells with a higher concentration of P-H bonds also obey the electron counting rule. A c(2x2) LEED image and two matching FTIR peaks were observed when the (2x2) reconstructed surface was exposed to atomic hydrogen. The corresponding c(2x2)-2P-3H surface unit cell can be shown to form a stable surface phase (T. Letzig et al., Phys. Rev. B, submitted). The complete transformation of the (2x2) surface to this new phase is not observed since the surface deteriorates when exposed to a higher dose of atomic hydrogen.

  18. Holographic representation of local bulk operators

    CERN Document Server

    Hamilton, A; Lifschytz, G; Lowe, D A; Hamilton, Alex; Kabat, Daniel; Lifschytz, Gilad; Lowe, David A.

    2006-01-01

    The Lorentzian AdS/CFT correspondence implies a map between local operators in supergravity and non-local operators in the CFT. By explicit computation we construct CFT operators which are dual to local bulk fields in the semiclassical limit. The computation is done for general dimension in global, Poincare and Rindler coordinates. We find that the CFT operators can be taken to have compact support in a region of the complexified boundary whose size is set by the bulk radial position. We show that at finite N the number of independent commuting operators localized within a bulk volume saturates the holographic bound.

  19. Bulk viscosity in holographic Lifshitz hydrodynamics

    OpenAIRE

    Carlos Hoyos; Bom Soo Kim; Yaron Oz

    2014-01-01

    We compute the bulk viscosity in holographic models dual to theories with Lifshitz scaling and/or hyperscaling violation, using a generalization of the bulk viscosity formula derived in arXiv:1103.1657 from the null focusing equation. We find that only a class of models with massive vector fields are truly Lifshitz scale invariant, and have a vanishing bulk viscosity. For other holographic models with scalars and/or massless vector fields we find a universal formula in terms of the dynamical ...

  20. Bulk viscosity in holographic Lifshitz hydrodynamics

    International Nuclear Information System (INIS)

    We compute the bulk viscosity in holographic models dual to theories with Lifshitz scaling and/or hyperscaling violation, using a generalization of the bulk viscosity formula derived in arXiv:1103.1657 from the null focusing equation. We find that only a class of models with massive vector fields are truly Lifshitz scale invariant, and have a vanishing bulk viscosity. For other holographic models with scalars and/or massless vector fields we find a universal formula in terms of the dynamical exponent and the hyperscaling violation exponent

  1. Bulk viscosity of hot and dense hadrons

    International Nuclear Information System (INIS)

    The bulk viscosity of hot and dense hadrons has been estimated within the framework of hadronic resonance gas model. We observe that the bulk viscosity to entropy ratio increases faster with temperature for higher μB. The magnitude of ζ is more at high μB. This results will have crucial importance for fire-ball produced at low energy nuclear collisions (FAIR, NICA). We note that the bulk to shear viscosity ratio remains above the bound set by AdS/CFT

  2. The bulk radio expansion of Cassiopeia A

    International Nuclear Information System (INIS)

    Comparison, in the visibility plane, or radio observations of Cassiopeia A made at 151 MHz over a 2.3 yr interval indicates that the bulk of the radio emitting material has not been decelerated strongly

  3. PHONON ECHOES IN BULK AND POWDERED MATERIALS

    OpenAIRE

    Kajimura, K.

    1981-01-01

    Experimental and theoretical studies of phonon echoes in bulk and powdered materials are reviewed. Phonon echoes have been observed in many materials such as bulk piezoelectric crystals, paramagnets, glasses, doped semiconductors, and piezoelectric, magnetic, and metallic powders, etc. The echoes arise from a time reversal of the phase, like spin echoes, of a primary pulsed acoustic excitation due to a second acoustic or rf pulse. The phase reversal occurs through the nonlinear interactions o...

  4. An intrinsic mobility ceiling of Si bulk

    OpenAIRE

    Garcia-Castello, Nuria; Prades, Joan Daniel; Cirera, Albert

    2011-01-01

    We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\\cdot10^6 cm^2/V\\cdot s$. We suggest that this result is related to the lowest effective mass of the $$ direction.

  5. 基于元素磷源的InP量子点的制备%Synthesis of InP Quantum Dots with Elemental Phosphine Source

    Institute of Scientific and Technical Information of China (English)

    王彬彬; 王莉; 汪瑾; 蒋阳

    2012-01-01

    The InP quantum dots (QDs) were synthesized via a colloidal chemical method with white phosphorus (P4), indium acetate (In (Ac)3), stearic acid and 1-octadecene (ODE) as phosphorus source, indium source, surfactant and solvent, respectively. The structure, size and shape of the quantum dots were analyzed by XRD and TEM. The resulting InP QDs were also characterized by UV-Visible absorption and fluorescence spectroscopy. The title material exhibits well-resolved absorption and emission properties. Meanwhile, the InP QDs emit at 415~517 nm in the electromagnetic spectrum showing obvious quantum size effect.%以白磷作为磷源、醋酸铟为铟源、硬脂酸为表面包覆剂、十八烯为溶剂,采用胶体化学法合成了InP量子点.X射线衍射(XRD)和透射电子显微镜(TEM)分析测试显示InP量子点属于立方闪锌矿结构,并且是直径约为5 nm的球状纳米晶.紫外可见光谱和荧光光谱分析表明,InP量子点表现出明显的激子吸收和带边发射特征,荧光发射光谱在415~517 nm范围内连续可调,呈现明显的量子尺寸效应.

  6. Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

    Science.gov (United States)

    Gocalinska, A.; Rubini, S.; Pelucchi, E.

    2016-10-01

    The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.

  7. Room-Temperature Inductively Coupled Plasma Etching of InP Using Cl2/N2 and Cl2/CH4/H2

    Institute of Scientific and Technical Information of China (English)

    LEE Chee-Wei; CHIN Mee-Koy

    2006-01-01

    @@ We optimize the room-temperature etching of InP using Cl2/CH4/H2 and Cl2/N2 inductively coupled plasma reactive ions. A design of experiment is used in the optimization. The results, in terms of etch rate, surface roughness and etched profile, are presented. These Cl2-based recipes do not require substrate heating and thus can be more cost effectively and widely applied. The Cl2/CH4/H2 process is able to give a higher etch rate (about 850nm/min) and cleaner surface with less polymer formation compared to the conventional CH4/H2 process.

  8. Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution

    Energy Technology Data Exchange (ETDEWEB)

    Riveros, G.; Guillemoles, J.F.; Lincot, D. [Laboratoire d' Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 (France); Gomez Meier, H. [Instituto de Chimica, Faculdad de Ciencas Basicas y Matematicas, Universidad Catolica de Valparaiso, Avda. Brasil 2950, Casila, Valparaiso (Chile); Froment, M.; Bernard, M.C.; Cortes, R. [Laboratoire de Physique des Liquides et Electrochimie (UPR CNRS 15), Universite Pierre et Marie Curie, 4 place Jussieu, F-75232 Paris Cedex 05 (France)

    2002-09-16

    Epitaxial growth of ZnSe thin films on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (-1.6-1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflective high energy electron diffraction (see Figure for a ZnSe epitaxial layer) and grazing angle X-ray diffraction. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  9. Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gas detection

    OpenAIRE

    Žďánský, K. (Karel); Yatskiv, R. (Roman)

    2012-01-01

    Schottky barriers on III-V compound semiconductors are still not well explored up to now. There were already reported Pd and Pt Schottky diode gas sensors using InP or GaN materials. However, reported sensing performances are surprisingly different. Thus, proper understanding of sensing mechanism is indispensable. We report on InP and GaN Schottky diode hydrogen sensors with low-leakage currents and high sensitivity, made by deposition of colloidal graphite and electrophoresis of Pd, Pt nebo ...

  10. EFFECT OF THE MILD METHOD OF FORMATION V XO Y/INP STRUCTURES USING V 2O 5GEL ON THE PROCESS OF THEIR OXIDATION AND COMPOSITION OF NANOSIZED OXIDE FILMS

    OpenAIRE

    MITTOVA I. YA.; Tomina, E. V.; SLADKOPEVTCEV B.V.

    2014-01-01

    A V xO y/InP structure was formed by the deposition of a V 2O 5 gel aerosol on an InP surface, followed by thermal annealing. This approach avoids chemostimulator interactions with the substrate prior to thermal oxidation, which is characteristic of ‘hard’ methods of chemostimulator deposition. The oxidation process of such structures occurs in the transit mechanism with a slight increase growth rate of films by 20-40 % in comparison with the oxidation of InP. The transit action of chemostimu...

  11. Development of superconductor bulk for superconductor bearing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong (and others)

    2008-08-15

    Current carrying capacity is one of the most important issues in the consideration of superconductor bulk materials for engineering applications. There are numerous applications of Y-Ba-Cu-O (YBCO) bulk superconductors e.g. magnetic levitation train, flywheel energy storage system, levitation transportation, lunar telescope, centrifugal device, magnetic shielding materials, bulk magnets etc. Accordingly, to obtain YBCO materials in the form of large, single crystals without weak-link problem is necessary. A top seeded melt growth (TSMG) process was used to fabricate single crystal YBCO bulk superconductors. The seeded and infiltration growth (IG) technique was also very promising method for the synthesis of large, single-grain YBCO bulk superconductors with good superconducting properties. 5 wt.% Ag doped Y211 green compacts were sintered at 900 .deg. C {approx} 1200 .deg.C and then a single crystal YBCO was fabricated by an infiltration method. A refinement and uniform distribution of the Y211 particles in the Y123 matrix were achieved by sintering the Ag-doped samples. This enhancement of the critical current density was ascribable to a fine dispersion of the Y211 particles, a low porosity and the presence of Ag particles. In addition, we have designed and manufactured large YBCO single domain with levitation force of 10-13 kg/cm{sup 2} using TSMG processing technique.

  12. Into the Bulk: A Covariant Approach

    CERN Document Server

    Engelhardt, Netta

    2016-01-01

    I propose a general, covariant way of defining when one region is "deeper in the bulk" than another. This definition is formulated outside of an event horizon (or in the absence thereof) in generic geometries; it may be applied to both points and surfaces, and may be used to compare the depth of bulk points or surfaces relative to a particular boundary subregion or relative to the entire boundary. Using the recently proposed "lightcone cut" formalism, the comparative depth between two bulk points can be determined from the singularity structure of Lorentzian correlators in the dual field theory. I prove that, by this definition, causal wedges of progressively larger regions probe monotonically deeper in the bulk. The definition furthermore matches expectations in pure AdS and in static AdS black holes with isotropic spatial slices, where a well-defined holographic coordinate exists. In terms of holographic RG flow, this new definition of bulk depth makes contact with coarse-graining over both large distances ...

  13. Orchestrating Bulk Data Movement in Grid Environments

    Energy Technology Data Exchange (ETDEWEB)

    Vazhkudai, SS

    2005-01-25

    Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralized data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.

  14. A diphoton resonance from bulk RS

    Science.gov (United States)

    Csáki, Csaba; Randall, Lisa

    2016-07-01

    Recent LHC data hinted at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to any other Standard Model particles would be too low to be detected so far. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from but close to the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  15. Bulk fields from the boundary OPE

    CERN Document Server

    Guica, Monica

    2016-01-01

    Previous work has established an equality between the geodesic integral of a free bulk field in AdS and the contribution of the conformal descendants of its dual CFT primary operator to the OPE of two other operators inserted at the endpoints of the geodesic. Working in the context of AdS$_3$/CFT$_2$, we extend this relation to include all $1/N$ corrections to the bulk field obtained by dressing it with i) a $U(1)$ current and ii) the CFT stress tensor, and argue it equals the contribution of the Ka\\v{c}-Moody/the Virasoro block to the respective boundary OPE. This equality holds for a particular framing of the bulk field to the boundary that involves a split Wilson line.

  16. Multiphase composites with extremal bulk modulus

    DEFF Research Database (Denmark)

    Gibiansky, L. V.; Sigmund, Ole

    2000-01-01

    This paper is devoted to the analytical and numerical study of isotropic elastic composites made of three or more isotropic phases. The ranges of their effective bulk and shear moduli are restricted by the Hashin-Shtrikman-Walpole (HSW) bounds. For two-phase composites, these bounds are attainable......, that is, there exist composites with extreme bulk and shear moduli. For multiphase composites, they may or may not be attainable depending on phase moduli and volume fractions. Sufficient conditions of attainability of the bounds and various previously known and new types of optimal composites...... are described. Most of our new results are related to the two-dimensional problem. A numerical topology optimization procedure that solves the inverse homogenization problem is adopted and used to look for two-dimensional three-phase composites with a maximal effective bulk modulus. For the combination...

  17. A Diphoton Resonance from Bulk RS

    CERN Document Server

    Csaki, Csaba

    2016-01-01

    Recent LHC data hints at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to Higges and to any other Standard Model particles are so far too low to be detected. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. We argue that if the state is a scalar, some form of sequestering is likely to be necessary to naturally explain the suppressed scalar-Higgs interactions. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  18. Bulk Comptonization by Turbulence in Accretion Disks

    CERN Document Server

    Kaufman, J

    2016-01-01

    Radiation pressure dominated accretion discs around compact objects may have turbulent velocities that greatly exceed the electron thermal velocities within the disc. Bulk Comptonization by the turbulence may therefore dominate over thermal Comptonization in determining the emergent spectrum. Bulk Comptonization by divergenceless turbulence is due to radiation viscous dissipation only. It can be treated as thermal Comptonization by solving the Kompaneets equation with an equivalent "wave" temperature, which is a weighted sum over the power present at each scale in the turbulent cascade. Bulk Comptonization by turbulence with non-zero divergence is due to both pressure work and radiation viscous dissipation. Pressure work has negligible effect on photon spectra in the limit of optically thin turbulence, and in this limit radiation viscous dissipation alone can be treated as thermal Comptonization with a temperature equivalent to the full turbulent power. In the limit of extremely optically thick turbulence, ra...

  19. Radiation-hardened bulk CMOS technology

    International Nuclear Information System (INIS)

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  20. Remedial investigations for quarry bulk wastes

    International Nuclear Information System (INIS)

    The US Department of Energy proposes, as a separate operable unit of the Weldon Spring Site Remedial Action Project, to remove contaminated bulk wastes from the Weldon Spring quarry and transport them approximately four miles to the chemical plant portion of the raffinate pits and chemical plant area. The wastes will be held in temporary storage prior to the record of decision for the overall remedial action. The decision on the ultimate disposal of these bulk wastes will be included as part of the decision for management of the waste materials resulting from remedial action activities at the raffinate pits and chemical plant area. 86 refs., 71 figs., 83 tabs

  1. Bulk Entropy in Loop Quantum Gravity

    OpenAIRE

    Livine, Etera R; Terno, Daniel R.

    2007-01-01

    In the framework of loop quantum gravity (LQG), having quantum black holes in mind, we generalize the previous boundary state counting (gr-qc/0508085) to a full bulk state counting. After a suitable gauge fixing we are able to compute the bulk entropy of a bounded region (the "black hole") with fixed boundary. This allows us to study the relationship between the entropy and the boundary area in details and we identify a holographic regime of LQG where the leading order of the entropy scales w...

  2. Bulk Entropy in Loop Quantum Gravity

    CERN Document Server

    Livine, Etera R

    2007-01-01

    In the framework of loop quantum gravity (LQG), having quantum black holes in mind, we generalize the previous boundary state counting (gr-qc/0508085) to a full bulk state counting. After a suitable gauge fixing we are able to compute the bulk entropy of a bounded region (the "black hole") with fixed boundary. This allows us to study the relationship between the entropy and the boundary area in details and we identify a holographic regime of LQG where the leading order of the entropy scales with the area. We show that in this regime we can fine tune the factor between entropy and area without changing the Immirzi parameter.

  3. Thermal relics in cosmology with bulk viscosity

    International Nuclear Information System (INIS)

    In this paper we discuss some consequences of cosmological models in which the primordial cosmic matter is described by a relativistic imperfect fluid. The latter takes into account the dissipative effects (bulk viscosity) arising from different cooling rates of the fluid components in the expanding Universe. We discuss, in particular, the effects of the bulk viscosity on Big Bang Nucleosynthesis and on the thermal relic abundance of particles, looking at recent results of PAMELA experiment. The latter has determined an anomalous excess of positron events, which cannot be explained by conventional cosmology and particle physics. (orig.)

  4. Synthesis of Bulk Superconducting Magnesium Diboride

    Directory of Open Access Journals (Sweden)

    Margie Olbinado

    2002-06-01

    Full Text Available Bulk polycrystalline superconducting magnesium diboride, MgB2, samples were successfully prepared via a one-step sintering program at 750°C, in pre Argon with a pressure of 1atm. Both electrical resistivity and magnetic susceptibility measurements confirmed the superconductivity of the material at 39K, with a transition width of 5K. The polycrystalline nature, granular morphology, and composition of the sintered bulk material were confirmed using X-ray diffractometry (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX.

  5. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    Science.gov (United States)

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate. PMID:27467383

  6. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

    International Nuclear Information System (INIS)

    The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states

  7. In situ study of the role of substrate temperature during atomic layer deposition of HfO{sub 2} on InP

    Energy Technology Data Exchange (ETDEWEB)

    Dong, H.; Santosh, K.C.; Qin, X.; Brennan, B.; McDonnell, S.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Hinkle, C. L.; Cho, K.; Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-10-21

    The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO{sub 2} on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO{sub 2} at different temperatures. An (NH{sub 4}){sub 2} S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.

  8. Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

    Science.gov (United States)

    Oomae, Hiroto; Asubar, Joel T.; Nakamura, Shinichi; Jinbo, Yoshio; Uchitomi, Naotaka

    2012-01-01

    We have directly grown zinc-blende (zb)-type MnAs thin films on InP (001) substrates without the aid of any buffer layer using molecular beam epitaxy (MBE). From the High-resolution X-ray diffraction (XRD) data, assuming face-centered cubic (fcc) MnAs structure, the average lattice constants values were calculated to be 6.068 and 6.060 Å for growth temperatures of 250 and 300 °C, respectively. High-resolution transmission electron microscopy (TEM) investigations and selected-area electron-diffraction (SAD) verified the successful growth of zb-type cubic MnAs coexisting with the NiAs-type hexagonal MnAs. The saturation magnetization was estimated to be 300 emu/cm 3 determined from the magnetic field dependence of the magnetization curves. From the temperature dependence of magnetization, the Curie temperature was found to be approximately 308 K. Success in the growth of zb-type MnAs thin films could be reasonably explained by the existence of a monolayer of InAs at the interface between the MnAs and InP substrates.

  9. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    Science.gov (United States)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  10. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  11. InP-quantum dots in Al{sub 0.20}Ga{sub 0.80}InP with different barrier configurations

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Wolfgang-Michael; Rossbach, Robert; Reischle, Matthias; Beirne, Gareth J.; Jetter, Michael; Michler, Peter [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Stuttgart (Germany)

    2009-04-15

    Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al{sub 0.20}Ga{sub 0.80}InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al{sub 0.50}Ga{sub 0.50}InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. THE OPTIMIZATION OF PLUSH YARNS BULKING PROCESS

    Directory of Open Access Journals (Sweden)

    VINEREANU Adam

    2014-05-01

    Full Text Available This paper presents the experiments that were conducted on the installation of continuous bulking and thermofixing “SUPERBA” type TVP-2S for optimization of the plush yarns bulking process. There were considered plush yarns Nm 6.5/2, made of the fibrous blend of 50% indigenous wool sort 41 and 50% PES. In the first stage, it performs a thermal treatment with a turboprevaporizer at a temperature lower than thermofixing temperature, at atmospheric pressure, such that the plush yarns - deposed in a freely state on a belt conveyor - are uniformly bulking and contracting. It was followed the mathematical modeling procedure, working with a factorial program, rotatable central composite type, and two independent variables. After analyzing the parameters that have a direct influence on the bulking degree, there were selected the pre-vaporization temperature (coded x1,oC and the velocity of belt inside pre-vaporizer (coded x 2, m/min. As for the dependent variable, it was chosen the plush yarn diameter (coded y, mm. There were found the coordinates of the optimal point, and then this pair of values was verified in practice. These coordinates are: x1optim= 90oC and x 2optim= 6.5 m/min. The conclusion is that the goal was accomplished: it was obtained a good cover degree f or double-plush carpets by reducing the number of tufts per unit surface.

  13. A Stereoscopic Look into the Bulk

    CERN Document Server

    Czech, Bartlomiej; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-01-01

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphism-invariant bulk operators. The CFT operators of interest are the "OPE blocks," contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space--the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow ...

  14. Bulk metamaterials: Design, fabrication and characterization

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Malureanu, Radu; Alabastri, Alessandro;

    2009-01-01

    Bulk metamaterials claim a lot of attention worldwide. We report about our activity and advances in design, fabrication and characterization of metal-dielectric composites with three-dimensional lattices. The nomenclature of designs exhibiting negative index behaviour in the near infrared includes...

  15. Realistic anomaly mediation with bulk gauge fields

    International Nuclear Information System (INIS)

    We present a simple general framework for realistic models of supersymmetry breaking driven by anomaly mediation. We consider a 5-dimensional 'brane universe' where the visible and hidden sectors are localized on different branes, and the standard model gauge bosons propagate in the bulk. In this framework there can be charged scalar messengers that have contact interactions with the hidden sector, either localized in the hidden sector or in the bulk. These scalars obtain soft masses that feed into visible sector scalar masses at two loop order via bulk gauge interactions. This contribution is automatically flavor-blind, and can be naturally positive. If the messengers are in the bulk this contribution is automatically the same order of magnitude as the anomaly mediated contribution, independent of the brane spacing. If the messengers are localized to a brane the two effects are of the same order for relatively small brane spacings. The gaugino masses and A terms are determined completely by anomaly mediation. In order for anomaly mediation to dominate over radion mediation the radion must be is stabilized in a manner that preserves supersymmetry, with supergravity effects included. We show that this occurs in simple models. We also show that the mu problem can be solved by the vacuum expectation value of a singlet in this framework. (author)

  16. Longitudinal bulk a coustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja;

    2009-01-01

    Design, fabrication and characterization, in terms of mass sensitivity, is presented for a polycrystalline silicon longitudinal bulk acoustic cantilever. The device is operated in air at 51 MHz, resulting in a mass sensitivity of 100 HZ/fg (1 fg = 10{su−15 g). The initial characterization...

  17. Integration of bulk piezoelectric materials into microsystems

    Science.gov (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.

  18. Bulk sulfur (S) deposition in China

    Science.gov (United States)

    Liu, Lei; Zhang, Xiuying; Wang, Shanqian; Zhang, Wuting; Lu, Xuehe

    2016-06-01

    A systematic dataset of an observation network on a national scale has been organized to investigate the spatial distribution of bulk sulfur (S) deposition (Sdep) throughout China during 2000-2013, representing by far the most detailed data set to track the bulk sulfur deposition throughout China since 2000. Such a dataset is needed for ecosystem studies and for developing emission control policies. Bulk Sdep values showed great variations, ranging from 2.17 to 70.55 kg ha-1 y-1, with an average of 22.99 kg ha-1 y-1. The average rate of bulk Sdep located in East Coastal region (35.97 kg ha-1 y-1), Middle Yangtze region (57.90 kg ha-1 y-1), Middle Yellow River region (23.42 kg ha-1 y-1), North Coastal region (42.19 kg ha-1 y-1), Northeast region (34.28 kg ha-1 y-1), South Coastal region (36.97 kg S ha-1 y-1), Southwest region (33.85 kg ha-1 y-1) was 4.50, 7.24, 2.93, 5.28, 4.29, 4.63 and 4.24 times than that in Northwest region (7.99 kg ha-1 y-1). Bulk Sdep over China was mainly from fossil fuel combustion (76.96%), biomass burning (7.64%), crust (6.22%), aged sea salt (5.48%) and agriculture (3.68%). A systematic observation network on a national scale should be established to conduct a long-term monitoring atmospheric Sdep (including wet and dry deposition), based on exiting ecological stations administrated by different departments in China.

  19. Activities report of the National Space Research Institute Plasma Laboratory for the period 1988/1989; Relatorio de atividades do Laboratorio Associado de Plasma do INPE no bienio 88/89

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Gerson Otto

    1990-11-01

    This report describes the activities performed in the period 1988/1989 by the National Space Research Institute (INPE/SCT) Plasma Laboratory (LAP). The report presents the main results in the following research lines: plasma physics, plasma technology, and controlled thermonuclear fusion. (author). 49 figs., 3 tabs.

  20. Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

    NARCIS (Netherlands)

    Carlström, C.F.; Van der Heijden, R.; Andriesse, M.S.P.; Karouta, F.; Van der Heijden, R.W.; Van der Drift, E.W.J.M.; Salemink, H.W.M.

    2008-01-01

    An extensive investigation has been performed on inductively coupled plasma etching of InP. An important motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals. The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. The i

  1. Bulk solitary waves in elastic solids

    Science.gov (United States)

    Samsonov, A. M.; Dreiden, G. V.; Semenova, I. V.; Shvartz, A. G.

    2015-10-01

    A short and object oriented conspectus of bulk solitary wave theory, numerical simulations and real experiments in condensed matter is given. Upon a brief description of the soliton history and development we focus on bulk solitary waves of strain, also known as waves of density and, sometimes, as elastic and/or acoustic solitons. We consider the problem of nonlinear bulk wave generation and detection in basic structural elements, rods, plates and shells, that are exhaustively studied and widely used in physics and engineering. However, it is mostly valid for linear elasticity, whereas dynamic nonlinear theory of these elements is still far from being completed. In order to show how the nonlinear waves can be used in various applications, we studied the solitary elastic wave propagation along lengthy wave guides, and remarkably small attenuation of elastic solitons was proven in physical experiments. Both theory and generation for strain soliton in a shell, however, remained unsolved problems until recently, and we consider in more details the nonlinear bulk wave propagation in a shell. We studied an axially symmetric deformation of an infinite nonlinearly elastic cylindrical shell without torsion. The problem for bulk longitudinal waves is shown to be reducible to the one equation, if a relation between transversal displacement and the longitudinal strain is found. It is found that both the 1+1D and even the 1+2D problems for long travelling waves in nonlinear solids can be reduced to the Weierstrass equation for elliptic functions, which provide the solitary wave solutions as appropriate limits. We show that the accuracy in the boundary conditions on free lateral surfaces is of crucial importance for solution, derive the only equation for longitudinal nonlinear strain wave and show, that the equation has, amongst others, a bidirectional solitary wave solution, which lead us to successful physical experiments. We observed first the compression solitary wave in the

  2. NPP bulk equipment dismantling problems and experience

    International Nuclear Information System (INIS)

    NPP bulk equipment dismantling problems and experience are summarized. 'ECOMET-S' JSC is shown as one of the companies which are able to make NPPs industrial sites free from stored bulk equipment with its further utilization. 'ECOMET-S' JSC is the Russian Federation sole specialized metallic LLW (MLLW) treatment and utilization facility. Company's main objectives are waste predisposal volume reduction and treatment for the unrestricted release as a scrap. Leningrad NPP decommissioned main pumps and moisture separators/steam super heaters dismantling results are presented. Prospective fragmentation technologies (diamond and electro-erosive cutting) testing results are described. The electro-erosive cutting machine designed by 'ECOMET-S' JSC is presented. The fragmentation technologies implementation plans for nuclear industry are presented too. (author)

  3. Bulk and shear viscosity in Hagedorn fluid

    Energy Technology Data Exchange (ETDEWEB)

    Tawfik, A.; Wahba, M. [Egyptian Center for Theoretical Physics (ECTP), MTI University, Faculty of Engineering, Cairo (Egypt)

    2010-11-15

    Assuming that the Hagedorn fluid composed of known particles and resonances with masses m <2 GeV obeys the first-order theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium of hadron resonances are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the in-medium thermal effects on bulk and shear viscosity and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equilibrium thermodynamics and the cosmological models, which require thermo- and hydro-dynamics equations of state. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  4. Bulk and Shear Viscosity in Hagedorn Fluid

    CERN Document Server

    Tawfik, A

    2010-01-01

    Assuming that the Hagedorn fluid composed of known particles and resonances with masses $m<2\\,$GeV obeys the {\\it first-order} theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the {\\it in-medium} thermal effects on bulk and shear viscosities and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equlibrium thermodynamics and the cosmological models, which require thermo and hydrodynamics equations of state.

  5. Bulk Locality and Boundary Creating Operators

    CERN Document Server

    Nakayama, Yu

    2015-01-01

    We formulate a minimum requirement for CFT operators to be localized in the dual AdS. In any spacetime dimensions, we show that a general solution to the requirement is a linear superposition of operators creating spherical boundaries in CFT, with the dilatation by the imaginary unit from their centers. This generalizes the recent proposal by Miyaji et al. for bulk local operators in the three dimensional AdS. We show that Ishibashi states for the global conformal symmetry in any dimensions and with the imaginary dilatation obey free field equations in AdS and that incorporating bulk interactions require their superpositions. We also comment on the recent proposals by Kabat et al., and by H. Verlinde.

  6. Bulk band gaps in divalent hexaborides

    Energy Technology Data Exchange (ETDEWEB)

    Denlinger, Jonathan; Clack, Jules A.; Allen, James W.; Gweon, Gey-Hong; Poirier, Derek M.; Olson, Cliff G.; Sarrao, John L.; Bianchi, Andrea D.; Fisk, Zachary

    2002-08-01

    Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. This semiconducting gap implies that carriers detected in transport measurements arise from defects, and the measured location of the bulk Fermi level at the bottom of the conduction band implicates boron vacancies as the origin of the excess electrons. The measured band structure and X-point gap in CaB6 additionally provide a stringent test case for proper inclusion of many-body effects in quasi-particle band calculations.

  7. Brane plus Bulk Supersymmetry in Ten Dimensions

    CERN Document Server

    Bergshoeff, E A; Ortín, Tomas; Roest, D; Van Proeyen, A

    2001-01-01

    We discuss a generalized form of IIA/IIB supergravity depending on all R-R potentials C^(p) (p=0,1,...,9) as the effective field theory of Type IIA/IIB superstring theory. For the IIA case we explicitly break this R-R democracy to either p=5 which allows us to write a new bulk action that can be coupled to N=1 supersymmetric brane actions. The case of 8-branes is studied in detail using the new bulk & brane action. The supersymmetric negative tension branes without matter excitations can be viewed as orientifolds in the effective action. These D8-branes and O8-planes are fundamental in Type I' string theory. A BPS 8-brane solution is given which satisfies the jump conditions on the wall. As an application of our results we derive a quantization of the mass parameter and the cosmological constant in string units.

  8. Surface-Bulk Vibrational Correlation Spectroscopy.

    Science.gov (United States)

    Roy, Sandra; Covert, Paul A; Jarisz, Tasha A; Chan, Chantelle; Hore, Dennis K

    2016-05-01

    Homo- and heterospectral correlation analysis are powerful methods for investigating the effects of external influences on the spectra acquired using distinct and complementary techniques. Nonlinear vibrational spectroscopy is a selective and sensitive probe of surface structure changes, as bulk molecules are excluded on the basis of symmetry. However, as a result of this exquisite specificity, it is blind to changes that may be occurring in the solution. We demonstrate that correlation analysis between surface-specific techniques and bulk probes such as infrared absorption or Raman scattering may be used to reveal additional details of the adsorption process. Using the adsorption of water and ethanol binary mixtures as an example, we illustrate that this provides support for a competitive binding model and adds new insight into a dimer-to-bilayer transition proposed from previous experiments and simulations. PMID:27058265

  9. Bulk entropy in loop quantum gravity

    Energy Technology Data Exchange (ETDEWEB)

    Livine, Etera R. [Laboratoire de Physique ENS Lyon, CNRS UMR 5672, 46 Allee d' Italie, 69364 Lyon Cedex 07 (France)], E-mail: etera.livine@ens-lyon.fr; Terno, Daniel R. [Centre for Quantum Computer Technology, Department of Physics, Macquarie University, Sydney NSW 2109 (Australia)], E-mail: dterno@physics.mq.edu.au

    2008-05-01

    In the framework of loop quantum gravity (LQG), we generalize previous boundary state counting for black hole entropy [E.R. Livine, D.R. Terno, Quantum black holes: Entropy and entanglement on the horizon, Nucl. Phys. B 741 (2006) 131, (gr-qc/0508085)] to a full bulk state counting. After suitable gauge fixing, we show how to compute the bulk entropy of a bounded region of space (the 'black hole') with fixed boundary conditions. This allows to study in detail the relationship between the entropy and the boundary area and to identify a holographic regime for LQG where the leading order of the entropy scales with the area. In this regime we can fine tune the factor between entropy and area without changing the Immirzi parameter.

  10. Raman characterization of bulk ferromagnetic nanostructured graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pardo, Helena, E-mail: hpardo@fq.edu.uy [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Divine Khan, Ngwashi [Mantfort University, Leicester (United Kingdom); Faccio, Ricardo [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Araujo-Moreira, F.M. [Grupo de Materiais e Dispositivos-CMDMC, Departamento de Fisica e Engenharia Fisica, UFSCar, Caixa Postal 676, 13565-905, Sao Carlos SP (Brazil); Fernandez-Werner, Luciana [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay)

    2012-08-15

    Raman spectroscopy was used to characterize bulk ferromagnetic graphite samples prepared by controlled oxidation of commercial pristine graphite powder. The G:D band intensity ratio, the shape and position of the 2D band and the presence of a band around 2950 cm{sup -1} showed a high degree of disorder in the modified graphite sample, with a significant presence of exposed edges of graphitic planes as well as a high degree of attached hydrogen atoms.

  11. Material profile influences in bulk-heterojunctions

    OpenAIRE

    Roehling, J.D.; Rochester, C.W.; Ro, H.W.; Wang, P.; Majewski, J; Batenburg, Joost; Arslan, I; Delongchamp, D.M.; Moulé, A.J.

    2014-01-01

    The morphology in mixed bulk-heterojunction films are compared using three different quantitative measurement techniques. We compare the vertical composition changes using high-angle annular dark-field scanning transmission electron microscopy with electron tomography and neutron and x-ray reflectometry. The three measurement techniques yield qualitatively comparable vertical concentration measurements. The presence of a metal cathode during thermal annealing is observed to alter the fulleren...

  12. Superconducting RF cavities film of bulk

    CERN Document Server

    Darriulat, Pierre

    1999-01-01

    The successful operation of LEP2 has demonstrated the feasibility of using on a large scale copper accelerating cavities coated with a thin superconducting niobium film. Yet other existing or planned installations such as CEBAF and TESLA, rely instead on the bulk niobium technology. The reason is a wide spread belief that the film technology would suffer from fundamental limitations preventing high gradients to be reached...

  13. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Reluctance motors with bulk HTS material

    International Nuclear Information System (INIS)

    In recent years we have successfully designed, built and tested several reluctance motors with YBCO bulk material incorporated into the rotor, working at 77 K. Our last motor type SRE150 was tested up to 200 kW. The aim of our investigations is the construction of motors with extremely high power density and dynamics. In comparison to conventional motor types the advantage of HTS reluctance motors with respect to size and dynamics could be demonstrated. Some fields of possible future applications will be described. These motors show a significant improvement in performance using high quality HTS bulk elements in the rotor. Until now the motor parameters have been limited by the current density which could be obtained in the bulk material at 77 K and by the geometric dimensions of the segments available. Therefore we expect further improvements in the case of these materials. Since the total motor including stator and rotor is working at low temperature we have to optimize the windings and the magnetic circuit to these operation conditions. A new design of a 200 kW motor in order to achieve increased power density and the theoretical results of our calculations will be shown

  15. Evidence for Bulk Ripplocations in Layered Solids

    Science.gov (United States)

    Gruber, Jacob; Lang, Andrew C.; Griggs, Justin; Taheri, Mitra L.; Tucker, Garritt J.; Barsoum, Michel W.

    2016-01-01

    Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation–best described as an atomic scale ripple–was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain. PMID:27640724

  16. Cosmological Implications of QGP Bulk Viscosity

    CERN Document Server

    Anand, Sampurn; Bhatt, Jitesh R

    2016-01-01

    Recent studies of the hot QCD matter indicate that the bulk viscosity ($\\zeta$) of quark-gluon plasma (QGP) rises sharply near the critical point of the QCD phase transition. In this work, we show that such a sharp rise of the bulk viscosity will lead to an effective negative pressure near the critical temperature, $T_{c}$ which in turn drives the Universe to inflate. This inflation has a natural graceful exist when the viscous effect evanesce. We estimate that, depending upon the peak value of $\\zeta$, universe expands by a factor of $10$ to $80$ times in a very short span ($\\Delta t\\sim 10^{-8}$ seconds). Another important outcome of the bulk viscosity dominated dynamics is the cavitation of QGP around $T \\sim 1.5T_{c}$. This would lead to the phenomenon of formation of cavitation bubbles within the QGP phase. The above scenario is independent of the order of QCD phase transition. We delineate some of the important cosmological consequences of the inflation and the cavitation.

  17. Superconducting State Parameters of Bulk Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Aditya M. Vora

    2012-12-01

    Full Text Available Well recognized empty core (EMC pseudopotential of Ashcroft is used to investigate the superconducting state parameters viz; electron-phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature TC, isotope effect exponent α and effective interaction strength NOV of some (Ni33Zr671 – xVx (x = 0, 0.05, 0.1, 0.15 bulk amorphous alloys. We have incorporated five different types of local field correction functions, proposed by Hartree (H, Taylor (T, Ichimaru-Utsumi (IU, Farid et al. (F and Sarkar et al. (S to show the effect of exchange and correlation on the aforesaid properties. Very strong influence of the various exchange and correlation functions is concluded from the present study. The TC obtained from Sarkar et al. (S local field correction function are found an excellent agreement with available theoretical data. Quadratic TC equation has been proposed, which provide successfully the TC values of bulk amorphous alloys under consideration. Also, the present results are found in qualitative agreement with other such earlier reported data, which confirms the superconducting phase in the s bulk amorphous alloys.

  18. Bulk viscous cosmology in early Universe

    Indian Academy of Sciences (India)

    C P Singh

    2008-07-01

    The effect of bulk viscosity on the early evolution of Universe for a spatially homogeneous and isotropic Robertson-Walker model is considered. Einstein's field equations are solved by using `gamma-law' equation of state = ( - 1)ρ, where the adiabatic parameter gamma () depends on the scale factor of the model. The `gamma' function is defined in such a way that it describes a unified solution of early evolution of the Universe for inflationary and radiation-dominated phases. The fluid has only bulk viscous term and the coefficient of bulk viscosity is taken to be proportional to some power function of the energy density. The complete general solutions have been given through three cases. For flat space, power-law as well as exponential solutions are found. The problem of how the introduction of viscosity affects the appearance of singularity, is briefly discussed in particular solutions. The deceleration parameter has a freedom to vary with the scale factor of the model, which describes the accelerating expansion of the Universe.

  19. Evidence for Bulk Ripplocations in Layered Solids

    Science.gov (United States)

    Gruber, Jacob; Lang, Andrew C.; Griggs, Justin; Taheri, Mitra L.; Tucker, Garritt J.; Barsoum, Michel W.

    2016-09-01

    Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation–best described as an atomic scale ripple–was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain.

  20. Evidence for Bulk Ripplocations in Layered Solids.

    Science.gov (United States)

    Gruber, Jacob; Lang, Andrew C; Griggs, Justin; Taheri, Mitra L; Tucker, Garritt J; Barsoum, Michel W

    2016-01-01

    Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation-best described as an atomic scale ripple-was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain. PMID:27640724

  1. Bulk Comptonization by turbulence in accretion discs

    Science.gov (United States)

    Kaufman, J.; Blaes, O. M.

    2016-06-01

    Radiation pressure dominated accretion discs around compact objects may have turbulent velocities that greatly exceed the electron thermal velocities within the disc. Bulk Comptonization by the turbulence may therefore dominate over thermal Comptonization in determining the emergent spectrum. Bulk Comptonization by divergenceless turbulence is due to radiation viscous dissipation only. It can be treated as thermal Comptonization by solving the Kompaneets equation with an equivalent `wave' temperature, which is a weighted sum over the power present at each scale in the turbulent cascade. Bulk Comptonization by turbulence with non-zero divergence is due to both pressure work and radiation viscous dissipation. Pressure work has negligible effect on photon spectra in the limit of optically thin turbulence, and in this limit radiation viscous dissipation alone can be treated as thermal Comptonization with a temperature equivalent to the full turbulent power. In the limit of extremely optically thick turbulence, radiation viscous dissipation is suppressed, and the evolution of local photon spectra can be understood in terms of compression and expansion of the strongly coupled photon and gas fluids. We discuss the consequences of these effects for self-consistently resolving and interpreting turbulent Comptonization in spectral calculations in radiation magnetohydrodynamic simulations of high luminosity accretion flows.

  2. Budker INP in ATLAS

    CERN Multimedia

    2001-01-01

    The Novosibirsk group has proposed a new design for the ATLAS liquid argon electromagnetic end-cap calorimeter with a constant thickness of absorber plates. This design has signifi- cant advantages compared to one in the Technical Proposal and it has been accepted by the ATLAS Collaboration. The Novosibirsk group is responsible for the fabrication of the precision aluminium structure for the e.m.end-cap calorimeter.

  3. Ultra-broadband Superradiant Pulses from Femtosecond Laser Pumped InP based Quantum Well Laser Diode

    Science.gov (United States)

    Liu, Jingjing

    Laser techniques, such as gain / Q switching, mode-locking, have successfully overcome the energy restriction of gain clamping in the stead-state operated lasers, and allowed the generation of giant pulses with short pulse durations. However, gain saturation further limits the amount of stored energy in a gain medium, and therefore limits the possible maximum pulse energy obtained by laser techniques. Here we circumvent both gain clamping and the capacity limitation of energy storage by operating the double-quantum-well laser diode chips on ultrafast gain-switching model using femtosecond (fs) laser pulses as the optical pump. The advantage of our pumping approach is that the fs pulse can instantly produce a very large number of carriers, and therefore enable the formation of non-equilibrium coherent e-h BCS-like condensate state in a large energy region from the lowest QW subband edges to the highest subband and then obtain the ultra-broadband superradiant pulses. Superradiance (SR) or the coherent spontaneous emission is not a new quantum optics phenomenon, which has been proposed in 1954 by R. Dicke, even earlier than the invention of laser. It is famous as by its ultrashort duration, high peak power, high coherence and high timing jitter. Recently, femtosecond SR pulses have been generated from semiconductors. This investigation has revived both theoretical and experimental studies of SR emission. In this thesis, we have demonstrated the generation of intense, delayed SR pulses from the InP based double quantum well laser diode at room temperature. The 1040 nm femtosecond laser was applied as the optical pumping source, and when the pump power is high enough, the cooperative recombination of e-h pairs from higher order quantum energy levels can occur to generate SR bursts earlier than the cooperative emission from the lower quantum energy levels. Then, ultra-broadband TM polarized SR pulses have been firstly generated at room temperature. Our experiments also

  4. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima;

    2014-01-01

    The development of epitaxial technology for the fabrication of quantum dot (QD) gain material operating in the 1.55 μm wavelength range is a key requirement for the evolvement of telecommunication. High performance QD material demonstrated on GaAs only covers the wavelength region 1-1.35 μm....... In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer...... dependence, and low laser quantum efficiency. Here, we demonstrate that with tailored growth conditions, which suppress surface migration of adatoms during the SK QD formation, much smaller base diameter (13.6nm versus 23nm) and an improved aspect ratio are achieved. In order to gain advantage of non...

  5. Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma

    Institute of Scientific and Technical Information of China (English)

    HONG Ting; ZHANG Yong-gang; LIU Tian-dong

    2004-01-01

    Reactive ion etching characteristics of GaAs,GaSb, InP and InAs using Cl2/Ar plasma have been investigated, it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power. Etch rates of above 0.45 μm/rin and 1.2 μm/rin have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/rin) were observed in etching of In-containing materials,which were linearly increased with the applied RF power. Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.

  6. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates

    International Nuclear Information System (INIS)

    A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37–100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the InxGa1−xAs quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.

  7. High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band.

    Science.gov (United States)

    Song, Hai-Zhi; Takemoto, Kazuya; Miyazawa, Toshiyuki; Takatsu, Motomu; Iwamoto, Satoshi; Ekawa, Mitsuru; Yamamoto, Tsuyoshi; Arakawa, Yasuhiko

    2015-06-15

    We theoretically demonstrate high quality(Q)-factor micropillar cavities at 1.55-μm wavelength based on Si/SiO(2)-InP hybrid structure. An adiabatic design in distributed Bragg reflectors (DBRs) improves Q-factor for upto 3 orders of magnitude, while reducing the diameter to sub-micrometer. A moderate Q-factor of ~3000 and a Purcell factor of ~200 are realized by only 2 taper segments and fewer conventional DBR pairs, enabling single photon generation at GHz rate. As the taper segment number is increased, Q-factor can be boosted to ~10(5)-10(6), enabling coherent exchange between the emitter and the optical mode at 1.55 μm, which is applicable in quantum information networks.

  8. GaInAs Junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing

    International Nuclear Information System (INIS)

    GaInAs JFETs were fabricated on VPE-grown GaInAs layers. The pn junctions have been realised with Be ion implantation and rapid thermal annealing. The devices show a high transconductance of 130 mS/mm and an electron saturation velocity of 1.8 x 107 cm/s. Channel mobilities measured at the complete device are as high as 6800 cm2/Vs. These excellent device properties are due to the use of an undoped InP buffer layer which avoids the diffusion of Fe from the substrate into the active layer. The data were supported by S-parameter measurements which gave a frequency limit of 20 GHz for gate dimensions of 1.6 by 200 μm2. (author)

  9. Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

    Institute of Scientific and Technical Information of China (English)

    Zhang Yang; Zeng Yi-Ping; Ma Long; Wang Bao-Qiang; Zhu Zhan-Ping; Wang Liang-Chen; Yang Fu-Hua

    2006-01-01

    This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm2 has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

  10. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

    Science.gov (United States)

    Sugiyama, Hiroki; Teranishi, Atsushi; Suzuki, Safumi; Asada, Masahiro

    2014-03-01

    We report metal-organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current-voltage characteristics with a high peak current density (JP) of around 2 × 105 A/cm2 and peak-to-valley ratio (PVR) of around 6. A comparison with control RTDs consisting of AlAs/In0.8Ga0.2As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR.

  11. Red single-photon emission from an InP /GaInP quantum dot embedded in a planar monolithic microcavity

    Science.gov (United States)

    Roßbach, Robert; Reischle, Matthias; Beirne, Gareth J.; Jetter, Michael; Michler, Peter

    2008-02-01

    Using micro-photoluminescence, we demonstrate single-photon emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in a planar microcavity realized by monolithically grown high reflectivity AlGaAs distributed Bragg reflectors. A full width at half maximum of 130μeV at 5K was observed from a single quantum dot coupled to the fundamental cavity resonance. Photon correlation measurements performed under continuous wave excitation show a clear antibunching behavior [g(2)(0)=0.13] as expected for a single-photon emitter. Saturation count rates up to 1.5MHz (8.1MHz into the first lens, with an extraction efficiency of 4.1%) were observed.

  12. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling

    Science.gov (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2016-10-01

    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  13. Evolution of bulk damage initiation in DKDP

    Science.gov (United States)

    Carr, Christopher W.; McMillian, T. H.; Staggs, Mike C.; Radousky, Harry B.; Demos, Stavros G.

    2003-05-01

    We investigate the evolution of laser-induced damage initiated in the bulk of DKDP crystals using in-situ microscopy. Experimental results indicate that at peek fluences greater than 10 J/cm2, damage sites are formed with increasing number as a function of the laser fluence. Following plasma formation, cracks are observed which grow in size for tens of seconds after the termination of the laser pulse. Subsequent irradiation leads to modest increase in size only during the initial 2-5 pulses. Experimental results suggest that there is also relaxation of the stresses adjacent to a damage site for several hours after initial damage.

  14. Hubble Parameter in Bulk Viscous Cosmology

    CERN Document Server

    Tawfik, A; Wahba, M

    2009-01-01

    We discuss influences of bulk viscosity on the Early Universe, which is modeled by Friedmann-Robertson-Walker metric and Einstein field equations. We assume that the matter filling the isotropic and homogeneous background is relativistic viscous characterized by ultra-relativistic equations of state deduced from recent lattice QCD simulations. We obtain a set of complicated differential equations, for which we suggest approximate solutions for Hubble parameter $H$. We find that finite viscosity in Eckart and Israel-Stewart fluids would significantly modify our picture about the Early Universe.

  15. Active neutron multiplicity counting of bulk uranium

    International Nuclear Information System (INIS)

    This paper describes a new nondestructive assay technique being developed to assay bulk uranium containing kilogram quantities of 235U. The new technique uses neutron multiplicity analysis of data collected with a coincidence counter outfitted with AmLi neutron sources. We have calculated the expected neutron multiplicity count rate and assay precision for this technique and will report on its expected performance as a function of detector design characteristics, 235U sample mass, AmLi source strength, and source-to-sample coupling. 11 refs., 2 figs., 2 tabs

  16. The bulk composition of exo-planets

    CERN Document Server

    Gaensicke, Boris; Dufour, Patrick; Farihi, Jay; Jura, Michael; Kilic, Mukremin; Melis, Carl; Veras, Dimitri; Xu, Siyi; Zuckerman, Ben

    2015-01-01

    Priorities in exo-planet research are rapidly moving from finding planets to characterizing their physical properties. Of key importance is their chemical composition, which feeds back into our understanding of planet formation. For the foreseeable future, far-ultraviolet spectroscopy of white dwarfs accreting planetary debris remains the only way to directly and accurately measure the bulk abundances of exo-planetary bodies. The exploitation of this method is limited by the sensitivity of HST, and significant progress will require a large-aperture space telescope with a high-throughput ultraviolet spectrograph.

  17. Neutron moisture gage for bulk material

    International Nuclear Information System (INIS)

    Desing and operation of neutron moisture gage of bulk materials intended for the determination of moisture of coke, agglomerated charge, and iron ore concentrate in black metallurgy is described. The moisture gage operates both under ''measurement'' and ''calibration'' conditions, contains a fast neutron source, and two groups of slow neutron detectors. Technical and economic efficiency of the moisture gage utilization consists in the improved accuracy of moisture detection at the expense of more accurate calibration, optimum arrangement of the carriage in a hopper, and stabilization of detector temperature. The device service is also simplified

  18. Improving the bulk data transfer experience

    Energy Technology Data Exchange (ETDEWEB)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  19. Failure by fracture in bulk metal forming

    DEFF Research Database (Denmark)

    Silva, C.M.A.; Alves, Luis M.; Nielsen, Chris Valentin;

    2015-01-01

    under loading conditions different from those found in conventional tests for bulk formability based on cylindrical,tapered and flanged specimens.The new formability test consists of expanding rings of various wall thicknesses with a stepped conical punch and allows investigating the onset of failure...... by cracking under three-dimensional states of stress subjected to various magnitudes of stress triaxiality.The presentation is supported by finite element analysis and experimentation in aluminium AA2030-T4 and results show that failure by fracture under three-dimensional loading conditions can be easily...

  20. Calculated Bulk Properties of the Actinide Metals

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.

    1978-01-01

    Self-consistent relativistic calculations of the electronic properties for seven actinides (Ac-Am) have been performed using the linear muffin-tin orbitals method within the atomic-sphere approximation. Exchange and correlation were included in the local spin-density scheme. The theory explains t...... the variation of the atomic volume and the bulk modulus through the 5f series in terms of an increasing 5f binding up to plutonium followed by a sudden localisation (through complete spin polarisation) in americium...

  1. Production, Properties and Applications of Bulk Amorphous Alloys

    Institute of Scientific and Technical Information of China (English)

    Tao Zhang; Akihisa Inoue

    2000-01-01

    A review is given of recent work concerned with the production method, the characteristic properties(1) Bulk amorphous system; (2) Mechanical and magnetic properties of bulkamorphous alloys; (3)application of bulk amorphous alloys.

  2. Constructing local bulk observables in interacting AdS/CFT

    CERN Document Server

    Kabat, Daniel; Lowe, David A

    2011-01-01

    Local operators in the bulk of AdS can be represented as smeared operators in the dual CFT. We show how to construct these bulk observables by requiring that the bulk operators commute at spacelike separation. This extends our previous work by taking interactions into account. Large-N factorization plays a key role in the construction. We show diagrammatically how this procedure is related to bulk Feynman diagrams.

  3. Substantial bulk photovoltaic effect enhancement via nanolayering.

    Science.gov (United States)

    Wang, Fenggong; Young, Steve M; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M

    2016-01-21

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)(1-x)). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition.

  4. Enhancing bulk superconductivity by engineering granular materials

    Science.gov (United States)

    Mayoh, James; García García, Antonio

    2014-03-01

    The quest for higher critical temperatures is one of the main driving forces in the field of superconductivity. Recent theoretical and experimental results indicate that quantum size effects in isolated nano-grains can boost superconductivity with respect to the bulk limit. Here we explore the optimal range of parameters that lead to an enhancement of the critical temperature in a large three dimensional array of these superconducting nano-grains by combining mean-field, semiclassical and percolation techniques. We identify a broad range of parameters for which the array critical temperature, TcArray, can be up to a few times greater than the non-granular bulk limit, Tc 0. This prediction, valid only for conventional superconductors, takes into account an experimentally realistic distribution of grain sizes in the array, charging effects, dissipation by quasiparticles and limitations related to the proliferation of thermal fluctuations for sufficiently small grains. For small resistances we find the transition is percolation driven. Whereas at larger resistances the transition occurs above the percolation threshold due to phase fluctuations. JM acknowledes support from an EPSRC Ph.D studentship, AMG acknowledges support from EPSRC, grant No. EP/I004637/1, FCT, grant PTDC/FIS/111348/2009 and a Marie Curie International Reintegration Grant PIRG07-GA-2010-268172.

  5. Substantial bulk photovoltaic effect enhancement via nanolayering

    Science.gov (United States)

    Wang, Fenggong; Young, Steve M.; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M.

    2016-01-01

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)1-x). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition.

  6. Ideal bulk pressure of active Brownian particles

    Science.gov (United States)

    Speck, Thomas; Jack, Robert L.

    2016-06-01

    The extent to which active matter might be described by effective equilibrium concepts like temperature and pressure is currently being discussed intensely. Here, we study the simplest model, an ideal gas of noninteracting active Brownian particles. While the mechanical pressure exerted onto confining walls has been linked to correlations between particles' positions and their orientations, we show that these correlations are entirely controlled by boundary effects. We also consider a definition of local pressure, which describes interparticle forces in terms of momentum exchange between different regions of the system. We present three pieces of analytical evidence which indicate that such a local pressure exists, and we show that its bulk value differs from the mechanical pressure exerted on the walls of the system. We attribute this difference to the fact that the local pressure in the bulk does not depend on boundary effects, contrary to the mechanical pressure. We carefully examine these boundary effects using a channel geometry, and we show a virial formula for the pressure correctly predicts the mechanical pressure even in finite channels. However, this result no longer holds in more complex geometries, as exemplified for a channel that includes circular obstacles.

  7. Characterization of bulk superconductors through EBSD methods

    Science.gov (United States)

    Koblischka, M. R.; Koblischka-Veneva, A.

    2003-10-01

    The application of electron backscatter diffraction (EBSD) technique to bulk high- Tc superconductors is presented and reviewed. Due to the ceramic nature and the complex crystallographic unit cells of the perovskite-type high- Tc superconductors, the EBSD analysis is not yet as common as it deserves. We have successfully performed EBSD analysis on a variety of high- Tc compounds and samples including polycrystalline YBCO (pure and doped by alkali metals), melt-textured YBCO, thin and thick films of YBCO; the “green phase” Y 2BaCuO 5, thin film and melt-textured NdBa 2Cu 3O x and Bi-2212 single crystals and tapes. It is shown that the surface preparation of the samples is crucial due to the small information depth (up to 100 nm) of the EBSD technique. High quality Kikuchi patterns are the requirement in order to enable the automated EBSD mapping, which yields phase distributions, individual grain orientations and the misorientation angle distribution. The results can be presented in form of mappings, as charts, and as pole figures. These informations are required for a better understanding of the growth mechanism(s) of bulk high- Tc superconductors intended for applications.

  8. Substantial bulk photovoltaic effect enhancement via nanolayering.

    Science.gov (United States)

    Wang, Fenggong; Young, Steve M; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M

    2016-01-01

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)(1-x)). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition. PMID:26791545

  9. 7 CFR 58.313 - Print and bulk packaging rooms.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Print and bulk packaging rooms. 58.313 Section 58.313 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards....313 Print and bulk packaging rooms. Rooms used for packaging print or bulk butter and related...

  10. 19 CFR 151.24 - Unlading facilities for bulk sugar.

    Science.gov (United States)

    2010-04-01

    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a...

  11. 30 CFR 56.6802 - Bulk delivery vehicles.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Bulk delivery vehicles. 56.6802 Section 56.6802... § 56.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a bulk delivery vehicle until the vehicle has been washed down and all explosive material has been removed. Before welding...

  12. 30 CFR 57.6802 - Bulk delivery vehicles.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Bulk delivery vehicles. 57.6802 Section 57.6802...-Surface and Underground § 57.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a bulk delivery vehicle until the vehicle has been washed down and all explosive material has...

  13. Bulk forming of industrial micro components in conventional metals and bulk metallic glasses

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Paldan, Nikolas Aulin; Eriksen, Rasmus Solmer;

    2007-01-01

    For production of micro components in large numbers, forging is an interesting and challenging process. The conventional metals like silver, steel and aluminum often require multi-step processes, but high productivity and increased strength justify the investment. As an alternative, bulk metallic...

  14. Comparative study of swelling, strain and radiation damage of high-energy proton-bombarded GaAs, GaP, InP, Si and Ge single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ascheron, C.; Flagmeyer, R.; Otto, G.; Schindler, A.

    1989-02-01

    Swelling is studied on GaAs, GaP, InP, Si and Ge implanted with 0.3 and 1.2 MeV protons in the range of fluences D=10/sup 15/-8x10/sup 17/ cm/sup -2/, for several proton energies, implantation and annealing temperatures (T=300-650 K). Within the region of the ''buried'' damaged layer all materials exhibit a volume dilation whereas in the near-surface layer only GaAs, GaP and Ge show considerable expansion and InP contracts due to the proton bombardment. For the interpretation of the results additional measurements of strain and damage density are taken into consideration.

  15. High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Vaughan, E. I.; Addamane, S.; Shima, D. M.; Balakrishnan, G.; Hecht, A. A.

    2016-04-01

    Thin-film structures containing AlSb were grown using solid-source molecular beam epitaxy and characterized for material quality, carrier transport optimization, and room-temperature radiation detection response. Few surface defects were observed, including screw dislocations resulting from shear strain between lattice-mismatched layers. Strain was also indicated by broadening of the AlSb peak in x-ray diffraction measurements. Threading dislocations and interfacial misfit dislocations were seen with transmission electron microscopy imaging. Doping of the AlSb layer was introduced during growth using GaTe and Be to determine the effect on Hall transport properties. Hall mobility and resistivity were largest for undoped AlSb samples, at 3000 cm2/V s and 106 Ω cm, respectively, and increased doping levels progressively degraded these values. To test for radiation response, p-type/intrinsic/ n-type (PIN) diode structures were grown using undoped AlSb on n-GaAs substrates, with p-GaSb cap layers to protect the AlSb from oxidation. Alpha-particle radiation detection was achieved and spectra were produced for 241Am, 252Cf, and 239Pu sources. Reducing the detector surface area increased the pulse height observed, as expected based on voltage-capacitance relationships for diodes.

  16. Investigations of 6LiIn1-xGaxSe2 semi-insulating crystals for neutron detection

    Science.gov (United States)

    Wiggins, Brenden; Bell, Joseph; Burger, Arnold; Stassun, Keivan; Stowe, Ashley C.

    2015-08-01

    Neutron detectors are used for illicit material detection, neutron radiography, stellar investigations of chemical content including biological compounds in planetary terrain and to monitor nuclear power plant fuel products and radioactive waste. Li-containing chalcogenide materials are promising alternative thermal neutron detection materials due to the incorporation of the 6Li isotope at high density. 6LiInSe2 is limited in its effective thermal neutron efficiency by 115In neutron capture which results in gamma decay rather than charge creation. This study includes investigations of mixed crystalline material 6LiIn1-xGaxSe2 where the indium concentration is reduced by Ga substitution. The optical properties have been tuned by gallium substitution and radiation response has been observed.

  17. Evolution of transport properties along a semi-insulating CdTe crystal grown by vertical gradient freeze method

    International Nuclear Information System (INIS)

    The evolution of transport properties along a chlorine-doped CdTe crystal grown by the gradient freeze (GF) method has been investigated by time of flight (TOF) measurement. Drift mobilities as high as 1100 cm2/(Vs) and 80 cm2/(Vs) for electrons and holes, respectively, are measured at the initial part of the grown crystal, and were found to decrease with increasing solidified fraction (g). On the other hand, the specific resistivity increases with increasing g. These behaviors can be understood as the dopant (Cl) concentration variation due to segregation during growth. The change in γ-detection properties between crystals having different g is demonstrated. (author)

  18. Non-steady-state photo-EMF in semi-insulating GaAs under frequency-modulated illumination

    OpenAIRE

    Bryushinin, M; Kulikov, V.; Sokolov, I.; Delaye, Philippe; Pauliat, Gilles

    2014-01-01

    PACS 42.65.Sf – Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics PACS 42.70.Nq – Other nonlinear optical materials; photorefractive and semiconductor materials Abstract – We report the excitation of the non-steady-state photoelectromotive force using a uniformly accelerated motion of the recording light pattern. Such illumination is created by the linear frequency modulation of the interfering light beams. The pul...

  19. Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field

    International Nuclear Information System (INIS)

    In 1932 Hecht obtained his famous equation concerning the charge induced on the plates of a planar radiation detector in the presence of a uniform electric field. It is well known that in many cases, due to non-ohmic contacts or, in any case, in the presence of spatial charge, the internal electric field is no longer constant, so this formula could lead to wrong conclusions. In this article the authors examine the common case of an electric field decreasing linearly along the detector thickness. This is a very interesting case because this shape of field is fairly widespread in the presence of diffused spatial charge and the functional dependence of the collected charge on varying the applied bias, in some cases, is similar to the Hecht equation. The authors believe that this model could be an important instrument for interpreting the data arising from pulsed photocurrent measures. Starting from Ramo–Shockley theorem and under the same Hecht's hypotheses (except for the uniform field), we calculate the new relation between the collected charge and the applied bias. (paper)

  20. A route to transparent bulk metals

    KAUST Repository

    Schwingenschlögl, Udo

    2012-07-23

    Hypothetical compounds based on a sapphire host are investigated with respect to their structural as well as electronic features. The results are obtained by electronic structure calculations within density functional theory and the generalized gradient approximation. A quarter of the Al atoms in Al 2O 3 is replaced by a 4d transition metal M ion, with d 0 to d 9 electronic configuration. We perform structure optimizations for all the compounds and analyze the electronic states. Due to the sizeable band gap of the Al 2O 3 host, we can identify promising candidates for transparent bulk metals. We explain the mechanisms leading to this combination of materials properties. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Bulk semiconducting scintillator device for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  2. Bulk disk resonator based ultrasensitive mass sensor

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Davis, Zachary James

    2009-01-01

    In the framework of developing an innovative label-free sensor for multiarrayed biodetection applications, we present a novel bulk resonator based mass sensor. The sensor is a polysilicon disk which shows a Q-factor of 6400 in air at 68.8 MHz, resulting in mass resolutions down in the femtogram...... range. The sensor has been characterized in terms of sensitivity both for distributed mass detection, performing six consecutive depositions of e-beam evaporated Au, and localized mass detection, depositing approximately 7.5 pg of Pt/Ga/C three times consecutively with a Focused Ion Beam system....... The sensor has an extremely high distributed mass to frequency shift sensitivity of 60104 Hzcm2/¿g and shows a localized mass to frequency sensitivity up to 4405 Hz/pg with a localized mass resolution down to 15 fg. The device has been fabricated with a new microfabrication process that uses only two...

  3. Tuneable film bulk acoustic wave resonators

    CERN Document Server

    Gevorgian, Spartak Sh; Vorobiev, Andrei K

    2013-01-01

    To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high.  Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the softwa...

  4. Holographic bulk viscosity: GPR vs EO

    CERN Document Server

    Buchel, Alex; Kiritsis, Elias

    2011-01-01

    Recently Eling and Oz (EO) proposed a formula for the holographic bulk viscosity, in arXiv:1103.1657, derived from the null horizon focusing equation. This formula seems different from that obtained earlier by Gubser, Pufu and Rocha (GPR) in arXiv:0806.0407 calculated from the IR limit of the two-point function of the trace of the stress tensor. The two were shown to agree only for some simple scaling cases. We point out that the two formulae agree in two non-trivial holographic theories describing RG flows. The first is the strongly coupled N=2* gauge theory plasma. The second is the semi-phenomenological model of Improved Holographic QCD.

  5. Universe Models with Negative Bulk Viscosity

    CERN Document Server

    Brevik, Iver

    2013-01-01

    The concept of negative temperatures has occasionally been used in connection with quantum systems. A recent example of this sort is reported in the paper of S. Braun et al. [Science 339,52 (2013)], where an attractively interacting ensemble of ultracold atoms is investigated experimentally and found to correspond to a negative-temperature system since the entropy decreases with increasing energy at the high end of the energy spectrum. As the authors suggest, it would be of interest to investigate whether a suitable generalization of standard cosmological theory could be helpful, in order to elucidate the observed accelerated expansion of the universe usually explained in terms of a positive tensile stress (negative pressure). In the present note we take up this basic idea and investigate a generalization of the standard viscous cosmological theory, not by admitting negative temperatures but instead by letting the bulk viscosity take negative values. Evidently, such an approach breaks standard thermodynamics,...

  6. Forming of bulk metallic glass microcomponents

    DEFF Research Database (Denmark)

    Wert, John A.; Thomsen, Christian; Jensen, Rune Debel;

    2009-01-01

    The present article considers forward extrusion, closed-die forging and backward extrusion processes for fabrication of individual microcomponents from two bulk metallic glass (BMG) compositions: Mg60Cu30Y10 and Zr44Cu40Ag8Al8. Two types of tooling were used in the present work: relatively massive...... die sets characteristic of cold forming operations for crystalline metals and lightweight die sets adapted to the special characteristics of BMGs. In addition to demonstrating that microcomponents of several geometries can be readily fabricated from BMGs, rheological properties are combined...... with crystallization kinetics to formulate a generally applicable method that can guide selection of optimal forming parameters. Finally, the use of particulate-based lubricants for BMG forming is shown to result in individual lubricant particles becoming mechanically locked into the BMG surface. (C) 2008 Elsevier B...

  7. Vortices in superconducting bulk, films and SQUIDs

    Indian Academy of Sciences (India)

    Ernst Helmut Brandt

    2006-01-01

    The properties of the ideal periodic vortex lattice in bulk superconductors and in films of any thickness can be calculated from Ginzburg-Landau theory by an iteration method using Fourier series. The London theory yields general analytic expressions for the magnetic field and energy of arbitrary arrangements of straight or curved vortex lines. The elasticity of the vortex lattice is highly nonlocal. The magnetic response of superconductors of realistic shapes like thin and thick strips and disks or thin rectangular plates or films, containing pinned vortices, can be computed within continuum theory by solving an integral equation. A useful example is a thin square with a central hole and a radial slit, used as superconducting quantum interference device (SQUID).

  8. Contact characteristics for YBCO bulk superconductors

    Science.gov (United States)

    Yamamoto, Naoki; Sakai, Tomokazu; Sawa, Koichiro; Tomita, Masaru; Murakami, Masato

    2003-10-01

    We have studied the contact characteristics of two resin-impregnated YBCO (a composite of YBa 2Cu 3O y and Y 2BaCuO 5) bulk superconductors in mechanical contact. A switching phenomenon could be observed at a threshold current or a transfer current value in the V- I curves of the YBCO contact. The transfer current exceeded the previous value of 13.5 A at 77 K in the contact when the sample surfaces were carefully polished. The present results suggest that a pair of YBCO blocks might be applicable to the mechanical persistent current switch for superconducting magnetic energy storage and other superconducting systems run in a persistent current mode.

  9. DEPLOYMENT OF THE BULK TRITIUM SHIPPING PACKAGE

    Energy Technology Data Exchange (ETDEWEB)

    Blanton, P.

    2013-10-10

    A new Bulk Tritium Shipping Package (BTSP) was designed by the Savannah River National Laboratory to be a replacement for a package that has been used to ship tritium in a variety of content configurations and forms since the early 1970s. The BTSP was certified by the National Nuclear Safety Administration in 2011 for shipments of up to 150 grams of Tritium. Thirty packages were procured and are being delivered to various DOE sites for operational use. This paper summarizes the design features of the BTSP, as well as associated engineered material improvements. Fabrication challenges encountered during production are discussed as well as fielding requirements. Current approved tritium content forms (gas and tritium hydrides), are reviewed, as well as, a new content, tritium contaminated water on molecular sieves. Issues associated with gas generation will also be discussed.

  10. Diffusion and bulk flow in phloem loading

    DEFF Research Database (Denmark)

    Dölger, Julia; Rademaker, Hanna; Liesche, Johannes;

    2014-01-01

    %-20% to the sucrose flux into the intermediary cells, while the main part is transported by diffusion. On the other hand, the subsequent sugar translocation into the sieve elements would very likely be carried predominantly by bulk water flow through the plasmodesmata. Thus, in contrast to apoplasmic loaders, all......Plants create sugar in the mesophyll cells of their leaves by photosynthesis. This sugar, mostly sucrose, has to be loaded via the bundle sheath into the phloem vascular system (the sieve elements), where it is distributed to growing parts of the plant. We analyze the feasibility of a particular...... loading mechanism, active symplasmic loading, also called the polymer trap mechanism, where sucrose is transformed into heavier sugars, such as raffinose and stachyose, in the intermediary-type companion cells bordering the sieve elements in the minor veins of the phloem. Keeping the heavier sugars from...

  11. Combustion of bulk titanium in oxygen

    Science.gov (United States)

    Clark, A. F.; Moulder, J. C.; Runyan, C. C.

    1975-01-01

    The combustion of bulk titanium in one atmosphere oxygen is studied using laser ignition and several analytical techniques. These were high-speed color cinematography, time and space resolved spectra in the visible region, metallography (including SEM) of specimens quenched in argon gas, X-ray and chemical product analyses, and a new optical technique, the Hilbert transform method. The cinematographic application of this technique for visualizing phase objects in the combustion zone is described. The results indicate an initial vapor phase reaction immediately adjacent to the molten surface but as the oxygen uptake progresses the evaporation approaches the point of congruency and a much reduced evaporation rate. This and the accumulation of the various soluble oxides soon drive the reaction zone below the surface where gas formation causes boiling and ejection of particles. The buildup of rutile cuts off the oxygen supply and the reaction ceases.

  12. Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

    OpenAIRE

    Carlström, C.F.; Heijden, R. van der; Andriesse, M.S.P.; Karouta, F.; van der Heijden, R. W.; Van der Drift, E.W.J.M.; H. W. M. Salemink

    2008-01-01

    An extensive investigation has been performed on inductively coupled plasma etching of InP. An important motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals. The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. The influence of different process parameters such as gas flows, temperature, pressure, ion energy, and inductively coupled plasma power on the hole geometry is presented. It is concluded that photonic ...

  13. Photonics-based microwave frequency measurement using a double-sideband suppressed-carrier modulation and an InP integrated ring-assisted Mach-Zehnder interferometer filter

    OpenAIRE

    Sanchez Fandiño, Javier Antonio; Muñoz Muñoz, Pascual

    2013-01-01

    © [2013 Optical Society of America.]. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. A photonic system capable of estimating the unknown frequency of a CW microwave tone is presented. The core of the system is a complementary optical filter monolithically integrated in InP, consisting of a ri...

  14. Research on Gas Sensing Property to Ammonia of Nano Porous InP%纳米多孔 InP 对氨气的气敏特性研究

    Institute of Scientific and Technical Information of China (English)

    申惠娟; 陈春彩; 陈源福

    2014-01-01

    Following Si and GaAs,InP is a new generation of electronic functional materials. The preparation of gas sensors with high integration by using porous semiconductor has also been attracted the attention of researchers,but little work has been made for gas sensing properties of porous InP. In this paper,nano porous InP was prepared by electrochemical etching,and its responsing of the voltage current characteristic to ammonia was observed to analyze gas sensing properties of the prepared material.%InP 是继 Si 和 GaAs 之后的新一代电子功能材料,利用多孔半导体制成微型化和集成度较高的气敏传感器也一直是研究的热点,但对多孔 InP 的气敏特性研究甚少。本文拟通过电化学刻蚀方法制备纳米多孔 InP,并观察其对氨气的伏安特性响应,从而分析该材料的气敏特性。

  15. The start-up phase of the national satellite forest monitoring systems for DRC and PNG: a joint venture between FAO and INPE

    Science.gov (United States)

    Jonckheere, I. G.; FAO UN-REDD Team Forestry Department

    2011-12-01

    Reducing Emissions from Deforestation and Forest Degradation (REDD) is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. "REDD+" goes beyond deforestation and forest degradation, and includes the role of conservation, sustainable management of forests and enhancement of forest carbon stocks. In the framework of getting countries ready for REDD+, the UN-REDD Programme, a partnership between UNEP, FAO and UNDP, assists developing countries to prepare and implement national REDD+ strategies. Designed collaboratively by a broad range of stakeholders, national UN-REDD Programmes are informed by the technical expertise of FAO, UNDP and UNEP. For the monitoring, reporting and verification, FAO supports the countries to develop satellite forest monitoring systems that allow for credible measurement, reporting and verification (MRV)of REDD+ activities. These are among the most critical elements for the successful implementation of any REDD+ mechanism, also following the COP 16 decisions in Cancun last year. The UN-REDD Programme through a joint effort of FAO and Brazil's National Space Agency, INPE, is supporting countries to develop cost-effective, robust and compatible national monitoring and MRV systems, providing tools, methodologies, training and knowledge sharing that help countries to strengthen their technical and institutional capacity for effective MRV systems. To develop strong nationally-owned forest monitoring systems, technical and institutional capacity building is key. The UN-REDD Programme, through FAO, has taken on intensive training together with INPE, and has provided technical help and assistance for in-country training and implementation for national satellite forest monitoring. The goal of the start-up phase for DRC and Papua New Guinea (PNG) in this capacity building effort is the

  16. Analisys, processing and validation data from eolic stations of SONDA project (National Organization System of Environmental Data) at Brazilian National Institute for Space Research (CPTEC/INPE) .

    Science.gov (United States)

    Junior, A. B.; Nogueira, J. M.; Garcia, S. G.; Andrade, E. S.

    2007-05-01

    Asiel Bomfin Jr. LIM/CPTEC/INPE, Cachoeira Paulista, S.P., Brazil; Eliana Soares de Andrade; Jorge Luiz Martins Nogueira and Silvia Garcia de Castro. The Center for Weather Forecast and Climatic Analysis (CPTEC), a division of INPE, the Brazilian National Institute for Space Research. Several of the INPE´s departments and centers, like the CPTEC, have a variety of valuable datasets, many of them freely available and eolic data from SONDA project are also part of them at Meteorological Instrumental Laboratory (LIM). This paper presents the Analiys, processing and validation method applied to the eolic data in a temporal time of ten minutes, to be used in a PC IBM computer. This method is divided in tree separated programs. The first software called "separa.c" has the capability of divide the ingest data set in mensal files, identified by each station group. The second software called "minuto.c" does a syntactical analysis, verifying and correcting eventual lost data with NAN values. The third one called "validacode.c" generates two principal files, one containing the original data and the other with the codes of each variable for each minute analyzed. These codes is based on BSRN (Baseline Surface Radiation Network), but with some differences in their analyzed method. This method followed the Webmet.com, The Meteorological Resource Center. Table 1:Validation Codes Code Meaning 0 Quality check procedure is not avaiable for this level 2 The data is suspect 5 Quality check procedure is avaiable for this level, but not can be done 9 The data is correct Table 2: Validation levels for WIND SPEED: Validation Levels Quality check procedure for suspect data 0 Maximum and Minimum values of 25 m/s and 0 m/s 1 Can not vary more than 0,1 m/s for 03 consecutive hours 2 Can not vary more than 0,5 m/s for 12 consecutive hours 3 - Table 3: Validation levels for WIND DRECTION: Validation Levels Quality check procedure for suspect data 0 Maximum and Minimum values of 360 and 0

  17. Cryogenic 36-45 GHz InP Low-Noise Amplifier MMIC's with Improved Noise Temperature by Eliminating Parasitic Parallel-Plate Modes

    Science.gov (United States)

    Nakano, Hiroshi; Shimizu, Takashi; Ohno, Takeshi; Hirachi, Yasutake; Kawaguchi, Noriyuki

    2012-08-01

    This paper describes cryogenic 36-45 GHz InP low-noise amplifier monolithic microwave integrated circuits (MMIC's) with an improved noise temperature by eliminating parasitic parallel-plate resonance modes. These MMIC's are used for a Radio Astronomical receiver, which needs the ultimate super low-noise and wide-band frequency characteristics, such as those in ALMA Band 1. The MMIC chips were designed in the coplanar waveguide (CPW), and mounted to the AlN substrate with a flip-chip assembly, which was promising compared to wire bonding. The flip-chip assemblies, however, are prone to cause the parasitic parallel plate resonance mode (PPM). The relationship between the S-parameters and the PPM was investigated by using a 3D-electromagnetic simulation of the simple transmission-line test-chip with the same chip size as that of the actual MMIC. In order to eliminate the PPM, additional bumps were mounted on the simple transmission-line test-chip, and the effect of these bumps was confirmed by the simulation. These results obtained from the simple transmission-line test-chip were applied to an actual MMIC chip assembly. The MMIC assembled with the additional bumps had no abnormality in the measured S-parameters, and the PPM had been eliminated up to 65 GHz. Moreover, the stability factor, K, became more than 2.4 over 36-45 GHz. This InP low-noise amplifier MMIC exhibited a gain of 15 dB and a noise temperature of 180-240 K at room temperature in the frequency range of 36-45 GHz. When cooled to 28 K, a gain of 17 dB and a noise temperature of 22-35 K were obtained at a power consumption of 4.7 mW over 36-45 GHz. A high-gain amplifier module consisting of two cascaded chips, exhibited a gain of 27-30 dB and a noise temperature of 25-30 K at the ambient temperature of 22 K in the frequency range of 41-45 GHz.

  18. Simulation of the impacts land use and land cover changes - LUCC on the hydrological response of the Ji-Parana Basin with MGB-INPE model

    Science.gov (United States)

    Rodriguez, D. A.; Tomasella, J.

    2012-04-01

    Hydrological response results from innumerous processes interacting at different spatial and temporal scales and with various intensities. Since the hydrological impacts of Land use and land cover change (LUCC) and climate variability (CV) are strongly dependent on soil water flow pathways, an adequate representation of the runoff generation mechanisms are crucial to assess the hydrological impacts of LUCC and CV on a basin scale. Model responses to LUCC depend on structure and parameterizations used in the model. There are two basic methodologies adopted to define the structure of the hydrological model: downward and upward approaches. Upward approach is more appropriate for identifying causal relationships, but their results are highly affected by assumptions used in the development of the model. Besides, model structure and parameters values definition are strongly affected by scale issues and their inter-relationships. Downward approach is more appropriate for studying the effects of LUCC, but casual relationships are more difficult to identify. MGB-INPE model was developed based on the Large Scale Basins Model of Brazilian Institute of Hydraulic Research (MGB-IPH). It uses the Xinanjiang Model approach for soil water capacity distribution at each cell combined with TopModel philosophy. Both methodologies follow a downward approach: the hydrologic response of the basin is associated with patterns of self-organization observed at the basin-scale. The model was applied in the Ji-Parana Basin (JPB), a 30.000-km2 basin in the SW Amazonia. The JPB is part of the Deforestation Arc of Amazonia in Brazil and it has lost more than 50 % of his forest cover since the 80's. Simulations were performed between 1982 and 2005 considering annual land use and land cover change. MGB-INPE model was able to represent the impact of LUCC in the runoff generation process and its dependence with basin topography. Simulation results agree with observational studies: LUCC impacts in fast

  19. Performance and applications of quench melt-growth bulk magnets

    Science.gov (United States)

    Nariki, S.; Teshima, H.; Morita, M.

    2016-03-01

    This paper describes the progress in quench melt-growth (QMG) bulk magnets, developed by the Nippon Steel & Sumitomo Metal Corporation, which consist of single crystalline RE123 phase and finely dispersed RE211 particles. QMG bulks can trap high magnetic fields. The field-trapping ability of QMG bulks is largely increased with an improvement in its J c and size, promising the realization of various applications such as flywheel energy-storage systems, ship motors, NMR/MRI spectrometers, wind-power generators and so on. Intensive research has revealed that the optimal RE element is different depending on application requirements. Gd-QMG bulk is the most promising material for several high-field engineering applications. The trapped magnetic field of Gd-QMG bulk 60 mm in diameter at 77 K is twice as large as that of Y-QMG bulk with a similar size due to its excellent J c properties. The large Gd-based QMG bulks up to 150 mm in diameter are fabricated by incorporating the RE compositional gradient method. Compact NMR/MRI spectrometers are one of the promising applications of bulk superconductors. Eu-QMG bulks are suitable for NMR magnets. NMR applications require extremely homogeneous magnetic fields. In the Eu-system, the small paramagnetic moment of a Eu ion compared to a Gd ion improves the field homogeneity in the bulk. For the application of current leads, Dy-based QMG is available by utilizing a low thermal conductivity.

  20. Transient radiation effects in GaAs devices: Bulk conduction and channel modulation phenomena in D-MESFET, E-JFET, AND n+-SI-n+ structures

    International Nuclear Information System (INIS)

    Transient radiation effects in GaAs devices have been studied using localized electron-beam pulses. Distinct response mechanisms are described and compared for different device structures of similar dimension, fabricated by ion-implantation into undoped semi-insulating GaAs substrates. An n-channel transient conduction increase with non-exponential recovery and millisecond time scale is quantitatively analyzed using a phenomenological model which incorporates the photovoltaic effect and charge separation at the channel-substrate junction. Good agreement is found using reasonable values for junction capacitance and recombination current. Slow emission of trapped positive charge from deep levels is not required to explain the observed recovery dynamics

  1. Dynamic yield deformation of InP single crystals at very high temperatures by liquid-encapsulation (LE) technique. Dynamische Verformung von InP-Einkristallen bei hoechsten Temperaturen mittels Liquid-Encapsulation (LE)-Technik

    Energy Technology Data Exchange (ETDEWEB)

    Reppich, B.; Rieger, K.; Mueller, G. (Erlangen-Nuernberg Univ., Erlangen (Germany, F.R.). Inst. fuer Werkstoffwissenschaften)

    1990-03-01

    Nominally undoped and lowly S-doped, (123) oriented InP single crystals have been deformed in uniaxial compression between 600deg C and 1000deg C under protective B{sub 2}O{sub 3} glassy melt (LE technique). The shear stress - shear strain curves exhibit pronounced upper and lower yield points. The lower yield stress obeys the Haasen-Alexander relation {tau}{sub ly}=constx(d{epsilon}/dt){sup 1/(2+m)} exp(E/(2+m)kT). Three regions/mechanisms well-known for highly-doped, covalent semiconductors with diamond structure can be distinguished: Region C at low temperatures T and high deformation rates (d{epsilon}/dt>10{sup -3} s{sup -1}) is due to quasi-viscous dislocation motion controlled by thermally activated motion of double kinks which is characterized by stress exponents m=1.5 for undoped and m=1.1 for S-doped InP, respectively. The activation energy (of kink formation) amounts to E{sup C}=(1.1{plus minus}0.1) eV for undoped InP, whereas E{sup C}=(2{plus minus}0.6) eV for S-doped InP is significantly higher. In the transition region B at medium d{epsilon}/dt between 10{sup -5} and 10{sup -3} s{sup -1} high m values between 4 and 8.5 increasing with T are found. The high-temperature region A observed for the first time for undoped and low S-doped InP at small deformation rates (d{epsilon}/dt<10{sup -5} s{sup -1}) is attributed to the diffusion-controlled, steady-state dragging of the impurity Cottrell clouds. The activation energy of this micro-creep process amounts to E{sup A}=(1.2{plus minus}0.15) eV for S-doped material. (orig.).

  2. A CFT Perspective on Gravitational Dressing and Bulk Locality

    CERN Document Server

    Lewkowycz, Aitor; Verlinde, Herman

    2016-01-01

    We revisit the construction of local bulk operators in AdS/CFT with special focus on gravitational dressing and its consequences for bulk locality. Specializing to 2+1-dimensions, we investigate these issues via the proposed identification between bulk operators and cross-cap boundary states. We obtain explicit expressions for correlation functions of bulk fields with boundary stress tensor insertions, and find that they are free of non-local branch cuts but do have non-local poles. We recover the HKLL recipe for restoring bulk locality for interacting fields as the outcome of a natural CFT crossing condition. We show that, in a suitable gauge, the cross-cap states solve the bulk wave equation for general background geometries, and satisfy a conformal Ward identity analogous to a soft graviton theorem, Virasoro symmetry, the large N conformal bootstrap and the uniformization theorem all play a key role in our derivations.

  3. Gravitational potential wells and the cosmic bulk flow

    CERN Document Server

    Kumar, Abhinav; Feldman, Hume A; Watkins, Richard

    2015-01-01

    The bulk flow is a volume average of the peculiar velocities and a useful probe of the mass distribution on large scales. The gravitational instability model views the bulk flow as a potential flow that obeys a Maxwellian Distribution. We use two N-body simulations, the LasDamas Carmen and the Horizon Run, to calculate the bulk flows of various sized volumes in the simulation boxes. Once we have the bulk flow velocities as a function of scale, we investigate the mass and gravitational potential distribution around the volume. We found that matter densities can be asymmetrical and difficult to detect in real surveys, however, the gravitational potential and its gradient may provide better tools to investigate the underlying matter distribution. This study shows that bulk flows are indeed potential flows and thus provides information on the flow sources. We also show that bulk flow magnitudes follow a Maxwellian distribution on scales $>10\\ h^{-1}$Mpc.

  4. Gravitational potential wells and the cosmic bulk flow

    Science.gov (United States)

    Wang, Yuyu; Kumar, Abhinav; Feldman, Hume; Watkins, Richard

    2016-03-01

    The bulk flow is a volume average of the peculiar velocities and a useful probe of the mass distribution on large scales. The gravitational instability model views the bulk flow as a potential flow that obeys a Maxwellian Distribution. We use two N-body simulations, the LasDamas Carmen and the Horizon Run, to calculate the bulk flows of various sized volumes in the simulation boxes. Once we have the bulk flow velocities as a function of scale, we investigate the mass and gravitational potential distribution around the volume. We found that matter densities can be asymmetrical and difficult to detect in real surveys, however, the gravitational potential and its gradient may provide better tools to investigate the underlying matter distribution. This study shows that bulk flows are indeed potential flows and thus provides information on the flow sources. We also show that bulk flow magnitudes follow a Maxwellian distribution on scales > 10h-1 Mpc.

  5. Determination of Bulk Dimensional Variation in Castings

    Energy Technology Data Exchange (ETDEWEB)

    Dr. James F. Cuttino Dr. Edward P. Morse

    2005-04-14

    The purpose of this work is to improve the efficiency of green sand foundries so that they may continue to compete as the most cost-effective method of fabrication while meeting tightening constraints on near-net shape manufacturing. In order to achieve this objective, the study is divided into two major components. The first component concentrated on identifying which processes control surface finish on the castings and which provide potential reductions in variations. The second component identified metrological methods that effectively discern between the geometry of bulk material versus surface finish in order to more accurately determine the quality of a part. The research resulted in the determination of an empirical relationship relating pouring parameters to dimensional variation, with an R2 value of greater than 0.79. A significant difference in variations obtained from vertical vs. horizontal molding machines was also noticed. When analyzed separately, however, the resulting empirical relationships for horizontal and vertical machines had reduced R2 values, probably due to the reduced data sets. Significant parameters when considering vertical and horizontal molding machines together included surface roughness, pattern type, iron type, pouring rate, copper content, amount of Western Bentonite, and permeability.

  6. Studies of bulk heterojunction solar cells

    Science.gov (United States)

    Cossel, Raquel; McIntyre, Max; Tzolov, Marian

    We are studying bulk heterojunction solar cells that were fabricated using a mixture of PCPDTBT and PCBM­C60. The impedance data of the cells in dark responded like a simple RC circuit. The value of the dielectric constant derived from these results is consistent with the values reported in the literature for these materials. We are showing that the parallel resistance in the equivalent circuit of linear lump elements can be interpreted using the DC current­voltage measurements. The impedance spectra under light illumination indicated the existence of additional polarization. This extra feature can be described by a model that includes a series RC circuit in parallel with the equivalent circuit for a device in dark. The physical interpretation of the additional polarization is based on photo­generated charges getting trapped in wells, which have a characteristic relaxation time corresponding to the observed break frequency in the impedance spectra. We have studied the influence of the anode and cathode interface on this phenomena, either by using different interface materials, or by depositing the metal electrode while the substate is heated.

  7. Material Profile Influences in Bulk-Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Roehling, John D.; Rochester, Christopher W.; Ro, Hyun W.; Wang, Peng; Majewski, Jaroslaw; Batenburg, Kees J.; Arslan, Ilke; Delongchamp, Dean M.; Moule, Adam J.

    2014-10-01

    he morphology in mixed bulk-heterojunction films are compared using three different quantitative measurement techniques. We compare the vertical composition changes using high-angle annular dark-field scanning transmission electron microscopy with electron tomography and neutron and x-ray reflectometry. The three measurement techniques yield qualita-tively comparable vertical concentration measurements. The presence of a metal cathode during thermal annealing is observed to alter the fullerene concentration throughout the thickness of the film for all measurements. However, the abso-lute vertical concentration of fullerene is quantitatively different for the three measurements. The origin of the quantitative measurement differences is discussed. The authors thank Luna Innovations, Inc. for donating the endohedral fullerenes used in this study and Plextronics for the P3HT. They are gratefully thank the National Science Foundation Energy for Sustainability Program, Award No. 0933435. This work benefited from the use of the Lujan Neutron Scattering Center at Los Alamos Neutron Science Center funded by the DOE Office of Basic Energy Sciences and Los Alamos National Laboratory under DOE Contract DE-AC52-06NA25396. This research was also supported in part by Laboratory Directed Research & Development program at PNNL. The Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy under contract DE-AC05-76RL01830.

  8. Failure Prediction in Bulk Metal Forming Process

    Directory of Open Access Journals (Sweden)

    Ameen Topa

    2014-01-01

    Full Text Available An important concern in metal forming is whether the desired deformation can be accomplished without defects in the final product. Various ductile fracture criteria have been developed and experimentally verified for a limited number of cases of metal forming processes. These criteria are highly dependent on the geometry of the workpiece and cannot be utilized for complicated shapes without experimental verification. However, experimental work is a resource hungry process. This paper proposes the ability of finite element analysis (FEA software such as LS-DYNA to pinpoint the crack-like flaws in bulk metal forming products. Two different approaches named as arbitrary Lagrangian-Eulerian (ALE and smooth particle hydrodynamics (SPH formulations were adopted. The results of the simulations agree well with the experimental work and a comparison between the two formulations has been carried out. Both approximation methods successfully predicted the flow of workpiece material (plastic deformation. However ALE method was able to pinpoint the location of the flaws.

  9. Casimir effect in dielectrics: Bulk energy contribution

    International Nuclear Information System (INIS)

    In a recent series of papers, Schwinger discussed a process that he called the dynamical Casimir effect. The key essence of this effect is the change in zero-point energy associated with any change in a dielectric medium. (In particular, if the change in the dielectric medium is taken to be the growth or collapse of a bubble, this effect may have relevance to sonoluminescence.) The kernel of Schwinger close-quote s result is that the change in Casimir energy is proportional to the change in the volume of the dielectric, plus finite-volume corrections. Other papers have called into question this result, claiming that the volume term should actually be discarded, and that the dominant term remaining is proportional to the surface area of the dielectric. In this paper, which is an expansion of an earlier Letter on the same topic, we present a careful and critical review of the relevant analyses. We find that the Casimir energy, defined as the change in zero-point energy due to a change in the medium, has at leading order a bulk volume dependence. This is in full agreement with Schwinger close-quote s result, once the correct physical question is asked. We have nothing new to say about sonoluminescence itself. copyright 1997 The American Physical Society

  10. Photoelectron spectroscopy bulk and surface electronic structures

    CERN Document Server

    Suga, Shigemasa

    2014-01-01

    Photoelectron spectroscopy is now becoming more and more required to investigate electronic structures of various solid materials in the bulk, on surfaces as well as at buried interfaces. The energy resolution was much improved in the last decade down to 1 meV in the low photon energy region. Now this technique is available from a few eV up to 10 keV by use of lasers, electron cyclotron resonance lamps in addition to synchrotron radiation and X-ray tubes. High resolution angle resolved photoelectron spectroscopy (ARPES) is now widely applied to band mapping of materials. It attracts a wide attention from both fundamental science and material engineering. Studies of the dynamics of excited states are feasible by time of flight spectroscopy with fully utilizing the pulse structures of synchrotron radiation as well as lasers including the free electron lasers (FEL). Spin resolved studies also made dramatic progress by using higher efficiency spin detectors and two dimensional spin detectors. Polarization depend...

  11. Bulk viscous cosmology: statefinder and entropy

    CERN Document Server

    He, X

    2006-01-01

    The statefinder diagnostic pair is adopted to differentiate viscous cosmology models and it is found that the trajectories of these viscous cosmology models on the statefinder pair $s-r$ plane are quite different from those of the corresponding non-viscous cases. Particularly for the quiessence model, the singular properties of state parameter $w=-1$ are obviously demonstrated on the statefinder diagnostic pair planes. We then discuss the entropy of the viscous / dissipative cosmology system which may be more practical to describe the present cosmic observations as the perfect fluid is just a global approximation to the complicated cosmic media in current universe evolution. When the bulk viscosity takes the form of $\\zeta=\\zeta_{1}\\dot{a}/a$($\\zeta_{1}$ is constant), the relationship between the entropy $S$ and the redshift $z$ is explicitly given out. We find that the entropy of the viscous cosmology is always increasing and consistent with the thermodynamics arrow of time for the universe evolution. With t...

  12. Thermodynamic properties of bulk and confined water

    Energy Technology Data Exchange (ETDEWEB)

    Mallamace, Francesco, E-mail: francesco.mallamace@unime.it [Dipartimento di Fisica e Scienza della Terra Università di Messina and CNISM, I-98168 Messina (Italy); Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Center for Polymer Studies and Department of Physics, Boston University, Boston, Massachusetts 02215 (United States); Corsaro, Carmelo [Dipartimento di Fisica e Scienza della Terra Università di Messina and CNISM, I-98168 Messina (Italy); Mallamace, Domenico [Dipartimento di Scienze dell' Ambiente, della Sicurezza, del Territorio, degli Alimenti e della Salute, Università di Messina, I-98166 Messina (Italy); Vasi, Sebastiano; Vasi, Cirino [IPCF-CNR, I-98166 Messina (Italy); Stanley, H. Eugene [Center for Polymer Studies and Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)

    2014-11-14

    The thermodynamic response functions of water display anomalous behaviors. We study these anomalous behaviors in bulk and confined water. We use nuclear magnetic resonance (NMR) to examine the configurational specific heat and the transport parameters in both the thermal stable and the metastable supercooled phases. The data we obtain suggest that there is a behavior common to both phases: that the dynamics of water exhibit two singular temperatures belonging to the supercooled and the stable phase, respectively. One is the dynamic fragile-to-strong crossover temperature (T{sub L} ≃ 225 K). The second, T{sup *} ∼ 315 ± 5 K, is a special locus of the isothermal compressibility K{sub T}(T, P) and the thermal expansion coefficient α{sub P}(T, P) in the P–T plane. In the case of water confined inside a protein, we observe that these two temperatures mark, respectively, the onset of protein flexibility from its low temperature glass state (T{sub L}) and the onset of the unfolding process (T{sup *})

  13. On methods of estimating cosmological bulk flows

    CERN Document Server

    Nusser, Adi

    2015-01-01

    We explore similarities and differences between several estimators of the cosmological bulk flow, $\\bf B$, from the observed radial peculiar velocities of galaxies. A distinction is made between two theoretical definitions of $\\bf B$ as a dipole moment of the velocity field weighted by a radial window function. One definition involves the three dimensional (3D) peculiar velocity, while the other is based on its radial component alone. Different methods attempt at inferring $\\bf B$ for either of these definitions which coincide only for a constant velocity field. We focus on the Wiener Filtering (WF, Hoffman et al. 2015) and the Constrained Minimum Variance (CMV,Feldman et al. 2010) methodologies. Both methodologies require a prior expressed in terms of the radial velocity correlation function. Hoffman et al. compute $\\bf B$ in Top-Hat windows from a WF realization of the 3D peculiar velocity field. Feldman et al. infer $\\bf B$ directly from the observed velocities for the second definition of $\\bf B$. The WF ...

  14. Recent developments of film bulk acoustic resonators

    Science.gov (United States)

    Gao, Junning; Liu, Guorong; Li, Jie; Li, Guoqiang

    2016-06-01

    Film bulk acoustic wave resonator (FBAR) experienced skyrocketing development in the past 15 years, owing to the explosive development of mobile communication. It stands out in acoustic filters mainly because of high quality factor, which enables low insertion loss and sharp roll off. Except for the massive application in wireless communication, FBARs are also promising sensors because of the high sensitivity and readily integration ability to miniaturize circuits. On the ground of summarizing FBAR’s application in wireless communication as filters and in sensors including electronic nose, bio field, and pressure sensing, this paper review the main challenges of each application faced. The number of filters installed in the mobile phone has being grown explosively, which leads to overcrowded bands and put harsh requirements on component size and power consumption control for each unit. Data flow and rate are becoming increasingly demanding as well. This paper discusses three promising technical strategies addressing these issues. Among which coupled resonator filter is given intense attention because it is able to vigorously reduce the filter size by stacking two or more resonators together, and it is a great technique to increase data flow and rate. Temperature compensation methods are discussed considering their vital influence on frequency stability. Finally, materials improvement and novel materials exploration for band width modulation, tunable band acquisition, and quality factor improvement are discussed. The authors appeal attention of the academic society to bring AlN epitaxial thin film into the FBAR fabrication and have proposed a configuration to implement this idea.

  15. Advances in Processing of Bulk Ferroelectric Materials

    Science.gov (United States)

    Galassi, Carmen

    The development of ferroelectric bulk materials is still under extensive investigation, as new and challenging issues are growing in relation to their widespread applications. Progress in understanding the fundamental aspects requires adequate technological tools. This would enable controlling and tuning the material properties as well as fully exploiting them into the scale production. Apart from the growing number of new compositions, interest in the first ferroelectrics like BaTiO3 or PZT materials is far from dropping. The need to find new lead-free materials, with as high performance as PZT ceramics, is pushing towards a full exploitation of bariumbased compositions. However, lead-based materials remain the best performing at reasonably low production costs. Therefore, the main trends are towards nano-size effects and miniaturisation, multifunctional materials, integration, and enhancement of the processing ability in powder synthesis. Also, in control of dispersion and packing, to let densification occur in milder conditions. In this chapter, after a general review of the composition and main properties of the principal ferroelectric materials, methods of synthesis are analysed with emphasis on recent results from chemical routes and cold consolidation methods based on the colloidal processing.

  16. On methods of estimating cosmological bulk flows

    Science.gov (United States)

    Nusser, Adi

    2016-01-01

    We explore similarities and differences between several estimators of the cosmological bulk flow, B, from the observed radial peculiar velocities of galaxies. A distinction is made between two theoretical definitions of B as a dipole moment of the velocity field weighted by a radial window function. One definition involves the three-dimensional (3D) peculiar velocity, while the other is based on its radial component alone. Different methods attempt at inferring B for either of these definitions which coincide only for the case of a velocity field which is constant in space. We focus on the Wiener Filtering (WF) and the Constrained Minimum Variance (CMV) methodologies. Both methodologies require a prior expressed in terms of the radial velocity correlation function. Hoffman et al. compute B in Top-Hat windows from a WF realization of the 3D peculiar velocity field. Feldman et al. infer B directly from the observed velocities for the second definition of B. The WF methodology could easily be adapted to the second definition, in which case it will be equivalent to the CMV with the exception of the imposed constraint. For a prior with vanishing correlations or very noisy data, CMV reproduces the standard Maximum Likelihood estimation for B of the entire sample independent of the radial weighting function. Therefore, this estimator is likely more susceptible to observational biases that could be present in measurements of distant galaxies. Finally, two additional estimators are proposed.

  17. Nanocomposite RE-Ba-Cu-O bulk superconductors

    OpenAIRE

    Iida, Kazumasa

    2016-01-01

    Nanocomposite oxide high-temperature bulk superconductors can be used as quasi-magnets. Thanks to the recent progress of material processing, quasi-magnet with 26 mm diameter can generate a large field of 17.6 T at 26 K. These results are highly attractive for applications, involving levitation of permanent magnets on the bulk superconductors. Indeed, several other applications such as motors and magnetic resonance microscope using bulk superconductors have been proposed and demonstrated. In ...

  18. Can local bulk effects explain the galactic dark matter?

    Energy Technology Data Exchange (ETDEWEB)

    Heydari-Fard, Malihe; Sepangi, Hamid R, E-mail: m.heydarifard@mail.sbu.ac.ir, E-mail: hr-sepangi@sbu.ac.ir [Department of Physics, Shahid Beheshti University, Evin, Tehran 19839 (Iran, Islamic Republic of)

    2008-08-15

    We obtain the virial theorem within the context of a brane-world model without mirror symmetry or any form of junction condition. Taking a constant curvature bulk (neglecting non-local bulk effects), the local bulk effects generate a geometrical mass, contributing to the gravitational energy which may be used to explain the virial mass discrepancy in clusters of galaxies. We fix the parameters of this model in agreement with observational data.

  19. Can local bulk effects explain the galactic dark matter?

    OpenAIRE

    Heydari-Fard, Malihe; Sepangi, Hamid R.

    2008-01-01

    We obtain the virial theorem within the context of a brane-world model without mirror symmetry or any form of junction condition. Taking a constant curvature bulk (neglecting non-local bulk effects), the local bulk effects generate a geometrical mass, contributing to the gravitational energy which may be used to explain the virial mass discrepancy in clusters of galaxies. We fix the parameter of this model in agreement with observational data.

  20. Extracting the bulk viscosity of the quark–gluon plasma

    International Nuclear Information System (INIS)

    We investigate the implications of a nonzero bulk viscosity coefficient on the azimuthal momentum anisotropy of ultracentral relativistic heavy ion collisions at the Large Hadron Collider. We find that, with IP-Glasma initial conditions, a finite bulk viscosity coefficient leads to a better description of the flow harmonics in ultracentral collisions. We then extract optimal values of bulk and shear viscosity coefficients that provide the best agreement with flow harmonic coefficients data in this centrality class

  1. Projected Range, Straggling and Sputtering Yield of the Ion-Impingement of Inert Gases in Group IV, InP and GaAs Semiconductors

    Directory of Open Access Journals (Sweden)

    J.D. Femi-Oyetoro

    2015-03-01

    Full Text Available One of the major challenges in ion implantation and sputtering process (especially in thin film deposition is to get a shallow or very deep profile and maximum sputtering yield respectively. In this paper, we simulate the projected range, lateral straggle, longitudinal straggle and sputtering yield of inert gas ions (He+, Ne+, Ar+, Kr+, Xe+, Rn+ impinged in group IV elements (C, Si, Ge, Sn, Pb, InP and GaAs against different parameters (ion energy and angle of incident ion, using the TRIM Monte-Carlo Code as embedded in SRIM. In particular, we generated a result on the consistency of the projected range, lateral and longitudinal straggle with the angle of incident ion using ion energies 1 KeV and 10 KeV. However an inconsistency exists in the sputtering yield and we noticed that maximum sputtering yield occurs for certain incident angle. In conclusion, the results presented here provides parameters needed to get low or high projected range and straggling, and also the exact incident angle needed in getting the maximum sputtering yield for the ion-target combinations used.

  2. Spectral and carrier transfer characteristics of 1.55 -μ m InAs /InP coupled-quantum-dot lasers

    Science.gov (United States)

    Lin, Zhiyuan; Wang, Zhuoran; Yuan, Guohui

    2015-07-01

    To explore the spectral and carrier transfer characteristics of 1.55 -μ m InAs /InP coupled-quantum-dot lasers (CQDLs), we develop a probabilistically coupled multipopulation rate equation model (PCMPREM) involving intradot and interdot relaxation, inhomogeneous broadening, and homogeneous broadening. After solving the PCMPREM with the fourth-order Runge-Kutta method, a simultaneous quadruple lasing spectrum is observed and explained by both the carrier competition theory and coupled theory. An analysis of the results shows that the coupling strength between different subbands changes with different current injections, giving a systematic understanding of the operation of CQDLs systems. With a lower threshold, the CQDL has a much broader output range of more than 105.3 nm around 1.55 μ m , which is 7.8 times greater than the uncoupled QDL, indicating that CQDLs can be excellent light sources for not only long-haul ultrahigh capacity optical communications, but also on-chip photonics integrated circuits with low power consumption.

  3. Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)

    2016-02-07

    III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

  4. Development of n{sup +}-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

    Energy Technology Data Exchange (ETDEWEB)

    Unno, Y., E-mail: yoshinobu.unno@kek.jp [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Carter, J.R.; Hommels, L.B.A.; Robinson, D. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Bloch, I.; Gregor, I.M.; Tackmann, K. [Josef Stefan Institute and Department of Physics, University of Ljubljana, Ljubljana (Slovenia); Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L. [Physikalisches Institut, Universitt Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Clark, A. [DPNC, University of Geneva, 24, Quai Ernest-Ansermet, CH-1211 Genve 4 (Switzerland); and others

    2014-11-21

    We have been developing a novel radiation-tolerant n{sup +}-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

  5. FAST TRACK COMMUNICATION: Epitaxial growth and characterization of MnAs on InP and In0.53Ga0.47As

    Science.gov (United States)

    Basu, D.; Bhattacharya, P.; Guo, W.; Kum, H.

    2009-05-01

    The heteroepitaxial growth of type-B ferromagnetic MnAs on InP and lattice matched In0.53Ga0.47As has been investigated for the first time. In situ reflection high energy electron diffraction during molecular beam epitaxy and atomic force microscopy are used to study the reconstruction and morphology, respectively, of the MnAs surface. The in-plane magnetic properties of the film are studied by magneto-optic Kerr effect measurements. The Curie temperature is estimated to be 315 K. The coercivity of 35 nm films measured at room temperature and 10 K are 860 Oe and 1410 Oe, respectively. The measured in-plane magnetocrystalline anisotropy constants Ku1 and Ku2 for the film are 2.747 × 106 and 7.086 × 106 erg cm-3, respectively. The magnetization and hysteresis in the out-of-plane direction are characterized by a saturation magnetic field of 1.2 T and coercivity of 1600 Oe at 10 K.

  6. Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing

    Science.gov (United States)

    Varenne, C.; Ndiaye, A.; Brunet, J.; Monier, G.; Spinelle, L.; Pauly, A.; Bideux, L.; Lauron, B.; Robert-Goumet, C.

    2012-06-01

    In previous reports, we have investigated on the influence of current transport mechanism on the sensitivity of InP Schottky and pseudo-Schottky diodes, for nitrogen dioxide detection. In this paper, the influence of the metal nature and the structure of the rectifying contact on the sensing layer are highlighted. More especially, we will focus on the behavior of these Schottky structures during and after their exposures to nitrogen dioxide (NO2) and ozone (O3). In this context, two types of structures have been studied: the simple Schottky diodes and the more elaborated structures called pseudo-Schottky. These diodes are realized with Au or Pd as metals. First, we will describe samples preparation and electrical characterization of the two types of structures. Then, we will compare sensor responses of these different structures under NO2 and O3. Finally, to better understand the action of these gases on the sensitive layer (the Schottky contact), X-rays photoelectron spectroscopy (XPS) is performed to follow the evolution of the metallic layer. The poisoning effect of active sites, which appears after NO2 and O3 expositions, is illustrated by comparative study of the active layer before and after exposure.

  7. Photoreflectance and double crystal x-ray study of strained InGaAsP layers on InP substrates

    International Nuclear Information System (INIS)

    Determining the composition of quaternary epitaxial films requires accurate measurements of both the lattice parameter and the bandgap energy. Complications arise in lattice-mismatched material, because the mismatch produces tetragonal distortion of the epi-layer and splitting of the valence band energies in a manner which depends on the film composition. This paper presents studies on strained InGaAsP grown on (100)InP. Using room temperature photoreflectance (PR) the authors observe shifting of the band gap and splitting of the valence band energies, and using the (115) and (004) reflections from double crystal x-ray diffraction (DXRD) the authors determine the values of the parallel and perpendicular lattice constants. By combining the lattice parameter measurements with band splitting data, the authors accurately determine the quaternary composition from a self- consistent model using an iterative procedure. By linear interpolation of the elastic-stiffness constants, C11 and C12, as well as the shear and hydrostatic deformation potentials for the four binary compounds in the InGaAsP system, we relate the state of biaxial stress to the induced shifts in the valence band energies

  8. Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes

    Science.gov (United States)

    Jang, Ilwan; Kim, Jiwan; Park, Chang Jun; Ippen, Christian; Greco, Tonino; Oh, Min Suk; Lee, Jeongno; Kim, Won Keun; Wedel, Armin; Han, Chul Jong; Park, Sung Kyu

    2015-11-01

    The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200°C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature. [Figure not available: see fulltext.

  9. Band offsets and electronic structures of interface between In0.5Ga0.5As and InP

    International Nuclear Information System (INIS)

    III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In0.5Ga0.5As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices

  10. Bulk flow scaling for turbulent channel and pipe flows

    CERN Document Server

    Chen, Xi; She, Zhen-Su

    2016-01-01

    We report a theory deriving bulk flow scaling for canonical wall-bounded flows. The theory accounts for the symmetries of boundary geometry (flat plate channel versus circular pipe) by a variational calculation for a large-scale energy length, which characterizes its bulk flow scaling by a simple exponent, i.e. $m=4$ for channel and 5 for pipe. The predicted mean velocity shows excellent agreement with several dozen sets of quality empirical data for a wide range of the Reynolds number (Re), with a universal bulk flow constant $\\kappa\\approx0.45$. Predictions for dissipation and turbulent transport in the bulk flow are also given, awaiting data verification.

  11. Locality, bulk equations of motion and the conformal bootstrap

    CERN Document Server

    Kabat, Daniel

    2016-01-01

    We develop an approach to construct local bulk operators in a CFT to order 1/N^2. Since 4-point functions are not fixed by conformal invariance we use the OPE to categorize possible forms for a bulk operator. Using previous results on 3-point functions we construct a local bulk operator in each OPE channel. We then impose the condition that the bulk operators constructed in different channels agree, and hence give rise to a well-defined bulk operator. We refer to this condition as the "bulk bootstrap." We argue and explicitly show in some examples that the bulk bootstrap leads to some of the same results as the regular conformal bootstrap. In fact the bulk bootstrap provides an easier way to determine some CFT data, since it does not require knowing the form of the conformal blocks. This analysis clarifies previous results on the relation between bulk locality and the bootstrap for theories with a 1/N expansion, and it identifies a simple and direct way in which OPE coefficients and anomalous dimensions deter...

  12. Xerophilic mycopopulations of teas in bulk

    Directory of Open Access Journals (Sweden)

    Škrinjar Marija M.

    2011-01-01

    Full Text Available d.o.o., Novi Sad AU Krunić Vesna J. AF EKOLd.o.o., Novi Sad KW teas % mould contamination % thermal treatment KR nema Other the water, tea is the most popular beverage in the world today. They are used for ages, in the beginning as refreshing drinks, and later more for their healing properties. Teas have been demonstrated to show antioxidative, anti-carcinogenic, and anti-microbial properties. Considering that the teas, during the production, are not treated with any temperature, there is high risk for contamination with different type of microorganisms, especially with moulds. Moulds are ubiquitously distributed in nature and their spores can be found in the atmosphere even at high altitudes and under favorable conditions of temperature and humidity, moulds grow on many commodities including cereals, oil seeds, nuts, herbs and spices. Most of them are potential producers of mycotoxins which present a real hazard to human health. The aim of this work was to investigate total mould count and to identify moulds isolated from teas in bulk, than from teas treated with hot, sterile, distilled water and from the tea filtrates. Tested teas were peppermint, sage, yarrow, black tea, bearberry, lemon balm, mixture of teas from Zlatibor. In teas in balk was observed high contamination with different kinds of moulds (1.84-4.55 cfu/g, such as Aspergillus awamori, A. lovaniensis, A niger, A. phoenicus, A. repens, A. restrictus, A. sydowii, A. versicolor, Eurotium amstelodami, E. chevalieri, E. herbariorum, Penicillium chrysogenum, and Scopulariopsis brevicaulis. The most frequent were species from Aspergillus and Eurotium genera. Thermal treatment with hot, sterile, distilled water reduced the number of fungal colonies. Aspergillus awamori was the most resistant and appeared in six samples of filtrates of tea, Aspergillus niger in one sample and Penicillium chrysogenum in one sample.

  13. Bulk limited conduction in electroluminescent polymer devices

    Science.gov (United States)

    Campbell, A. J.; Weaver, M. S.; Lidzey, D. G.; Bradley, D. D. C.

    1998-12-01

    The current-voltage (J-V) characteristics of ITO/polymer film/Al or Au structures of poly(phenylene vinylene) (PPV) and a dialkoxy PPV copolymer have been recorded for a range of different film thickness d and temperatures T. At high applied bias all the characteristics can be fitted over a given range to a power law J=KVm, where m increases with decreasing T, log(K) is proportional to m, and K is proportional to d-α m, where α˜2 (ITO/polymer film/Al devices) and ˜1 (ITO/polymer film/Au devices). Different single carrier space charge limited conduction theories have been used to try and explain this behavior. The analytical theory in which the carrier density is decreased by an exponential trap distribution lying below effectively isoelectronic transport states is in good agreement, but cannot explain the thickness dependence of the ITO/polymer film/Au devices and can be criticized as being physically unreasonable. A numerical analysis in which the mobility has the field and temperature dependence found for hopping transport in disordered systems is also in good agreement, but can only fit a small range of J and cannot explain the magnitude of K, the temperature dependence of m or the abrupt change in slope in the J-V characteristics with increasing bias. Mixed models are equally good but cannot explain the deviations from experiment. We consider that further experimental studies of carrier mobilities and the nature of the traps present in such materials is required to distinguish between these models and resolve the nature of bulk limited conduction in conjugated polymers.

  14. Cavitation instability in bulk metallic glasses

    Science.gov (United States)

    Dai, L. H.; Huang, X.; Ling, Z.

    2015-09-01

    Recent experiments have shown that fracture surfaces of bulk metallic glasses (BMGs) usually exhibit an intriguing nanoscale corrugation like fractographic feature mediated by nanoscale void formation. We attribute the onset of this nanoscale corrugation to TTZs (tension transformation zones) mediated cavitation. In our recent study, the spall experiments of Zr-based BMG using a single-stage light gas gun were performed. To uncover the mechanisms of the spallation damage nucleation and evolution, the samples were designed to be subjected to dynamic tensile loadings of identical amplitude but with different durations by making use of the multi-stress pulse and the double-flyer techniques. It is clearly revealed that the macroscopic spall fracture in BMGs originates from the nucleation, growth and coalescence of micro-voids. Then, a microvoid nucleation model of BMGs based on free volume theory is proposed, which indicates that the nucleation of microvoids at the early stage of spallation in BMGs is resulted from diffusion and coalescence of free volume. Furthermore, a theoretical model of void growth in BMGs undergoing remote dynamic hydrostatic tension is developed. The critical condition of cavitation instability is obtained. It is found that dynamic void growth in BMGs can be well controlled by a dimensionless inertial number characterizing the competition between intrinsic and extrinsic time scales. To unveil the atomic-level mechanism of cavitation, a systematic molecular dynamics (MD) simulation of spallation behaviour of a binary metallic glass with different impact velocities was performed. It is found that micro-void nucleation is determined TTZs while the growth is controlled by shear transformation zones (STZs) at atomic scale.

  15. Cavitation instability in bulk metallic glasses

    Directory of Open Access Journals (Sweden)

    Dai L.H.

    2015-01-01

    Full Text Available Recent experiments have shown that fracture surfaces of bulk metallic glasses (BMGs usually exhibit an intriguing nanoscale corrugation like fractographic feature mediated by nanoscale void formation. We attribute the onset of this nanoscale corrugation to TTZs (tension transformation zones mediated cavitation. In our recent study, the spall experiments of Zr-based BMG using a single-stage light gas gun were performed. To uncover the mechanisms of the spallation damage nucleation and evolution, the samples were designed to be subjected to dynamic tensile loadings of identical amplitude but with different durations by making use of the multi-stress pulse and the double-flyer techniques. It is clearly revealed that the macroscopic spall fracture in BMGs originates from the nucleation, growth and coalescence of micro-voids. Then, a microvoid nucleation model of BMGs based on free volume theory is proposed, which indicates that the nucleation of microvoids at the early stage of spallation in BMGs is resulted from diffusion and coalescence of free volume. Furthermore, a theoretical model of void growth in BMGs undergoing remote dynamic hydrostatic tension is developed. The critical condition of cavitation instability is obtained. It is found that dynamic void growth in BMGs can be well controlled by a dimensionless inertial number characterizing the competition between intrinsic and extrinsic time scales. To unveil the atomic-level mechanism of cavitation, a systematic molecular dynamics (MD simulation of spallation behaviour of a binary metallic glass with different impact velocities was performed. It is found that micro-void nucleation is determined TTZs while the growth is controlled by shear transformation zones (STZs at atomic scale.

  16. T-Duality Simplifies Bulk-Boundary Correspondence

    Science.gov (United States)

    Mathai, Varghese; Thiang, Guo Chuan

    2016-07-01

    Recently, we introduced T-duality in the study of topological insulators. In this paper, we study the bulk-boundary correspondence for three phenomena in condensed matter physics, namely, the quantum Hall effect, the Chern insulator, and time reversal invariant topological insulators. In all of these cases, we show that T-duality trivializes the bulk-boundary correspondence.

  17. 7 CFR 58.211 - Packaging room for bulk products.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Packaging room for bulk products. 58.211 Section 58... Service 1 Rooms and Compartments § 58.211 Packaging room for bulk products. A separate room or area shall... dust within the packaging room and where needed, a dust collector shall be provided and...

  18. Advanced and new developments in bulk metal forming

    DEFF Research Database (Denmark)

    Bay, Niels; Wanheim, Tarras; Ravn, Bjarne Gottlieb;

    2000-01-01

    Increasing demands to manufacturing industry of faster, better and cheaper production has intensified the research and development of bulk metal forming. The present paper gives examples on European industrial research on secondary bulk metal forming processes. The R&D follows three lines of appr...

  19. Import and Export of Bulk Pharmaceuticals in 2006

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    @@ According to customs statistics, the total import and export value of bulk pharmaceuticals (excluding chemical raw materials and bulk pesticides) in China was US$10.346 billion in 2006. The export value was US$7.482 billion - an increase of 22% over the 2005.

  20. Calculation of structurally related properties of bulk and surface Si

    International Nuclear Information System (INIS)

    The self-consistent pseudopotential method is applied to study the bulk and surface structurally related properties of Si. Equilibrium configurations are determined by minimizing the total energy of the system; the calculated bulk properties and the surface relaxation of Si are found to be in good agreement with experiment. The surface energy and the surface reconstruction of Si are briefly discussed

  1. Synthesizing Bulk Density for Soils with Abundant Rock Fragments

    Science.gov (United States)

    Vincent, K. R.; Chadwick, O. A.

    1994-01-01

    Bulk density is a fundamental soil property that is difficult to determine for gravelly to extremely gravelly soils because results vary significantly with sample volume. For such coarse soils, the representative volume (for whole-soil bulk density) should be large, but guidelines for selecting an appropriate sample volume do not exist.

  2. 27 CFR 24.301 - Bulk still wine record.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk still wine record. 24..., DEPARTMENT OF THE TREASURY LIQUORS WINE Records and Reports § 24.301 Bulk still wine record. A proprietor who produces or receives still wine in bond, (including wine intended for use as distilling material or...

  3. 77 FR 12293 - PCBs Bulk Product v. Remediation Waste

    Science.gov (United States)

    2012-02-29

    ... AGENCY PCBs Bulk Product v. Remediation Waste AGENCY: Environmental Protection Agency (EPA). ACTION... remediation waste. The proposed reinterpretation is ] in response to questions EPA received about the... regarding PCB bulk product and PCB remediation waste under regulations promulgated at 40 CFR part 761....

  4. Stability of bulk metallic glass structure

    Energy Technology Data Exchange (ETDEWEB)

    Jain, H.; Williams, D.B.

    2003-06-18

    The fundamental origins of the stability of the (Pd-Ni){sub 80}P{sub 20} bulk metallic glasses (BMGs), a prototype for a whole class of BMG formers, were explored. While much of the properties of their BMGs have been characterized, their glass-stability have not been explained in terms of the atomic and electronic structure. The local structure around all three constituent atoms was obtained, in a complementary way, using extended X-ray absorption fine structure (EXAFS), to probe the nearest neighbor environment of the metals, and extended energy loss fine structure (EXELFS), to investigate the environment around P. The occupied electronic structure was investigated using X-ray photoelectron spectroscopy (XPS). The (Pd-Ni){sub 80}P{sub 20} BMGs receive their stability from cumulative, and interrelated, effects of both atomic and electronic origin. The stability of the (Pd-Ni){sub 80}P{sub 20} BMGs can be explained in terms of the stability of Pd{sub 60}Ni{sub 20}P{sub 20} and Pd{sub 30}Ni{sub 50}P{sub 20}, glasses at the end of BMG formation. The atomic structure in these alloys is very similar to those of the binary phosphide crystals near x=0 and x=80, which are trigonal prisms of Pd or Ni atoms surrounding P atoms. Such structures are known to exist in dense, randomly-packed systems. The structure of the best glass former in this series, Pd{sub 40}Ni{sub 40}P{sub 20} is further described by a weighted average of those of Pd{sub 30}Ni{sub 50}P{sub 20} and Pd{sub 60}Ni{sub 20}P{sub 20}. Bonding states present only in the ternary alloys were found and point to a further stabilization of the system through a negative heat of mixing between Pd and Ni atoms. The Nagel and Tauc criterion, correlating a decrease in the density of states at the Fermi level with an increase in the glass stability, was consistent with greater stability of the Pd{sub x}Ni{sub (80-x)}P{sub 20} glasses with respect to the binary alloys of P. A valence electron concentration of 1.8 e/a, which

  5. Renormalization group approach to causal bulk viscous cosmological models

    International Nuclear Information System (INIS)

    The renormalization group method is applied to the study of homogeneous and flat Friedmann-Robertson-Walker type universes, filled with a causal bulk viscous cosmological fluid. The starting point of the study is the consideration of the scaling properties of the gravitational field equations, the causal evolution equation of the bulk viscous pressure and the equations of state. The requirement of scale invariance imposes strong constraints on the temporal evolution of the bulk viscosity coefficient, temperature and relaxation time, thus leading to the possibility of obtaining the bulk viscosity coefficient-energy density dependence. For a cosmological model with bulk viscosity coefficient proportional to the Hubble parameter, we perform the analysis of the renormalization group flow around the scale-invariant fixed point, thereby obtaining the long-time behaviour of the scale factor

  6. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  7. Bulk viscosity of spin-one color superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sa' d, Basil A.

    2009-08-27

    The bulk viscosity of several quark matter phases is calculated. It is found that the effect of color superconductivity is not trivial, it may suppress, or enhance the bulk viscosity depending on the critical temperature and the temperature at which the bulk viscosity is calculated. Also, is it found that the effect of neutrino-emitting Urca processes cannot be neglected in the consideration of the bulk viscosity of strange quark matter. The results for the bulk viscosity of strange quark matter are used to calculate the r-mode instability window of quark stars with several possible phases. It is shown that each possible phase has a different structure for the r-mode instability window. (orig.)

  8. Temperature dependence of bulk viscosity in water using acoustic spectroscopy

    CERN Document Server

    Holmes, M J; Povey, M J W

    2010-01-01

    Despite its fundamental role in the dynamics of compressible fluids, bulk viscosity has received little experimental attention and there remains a paucity of measured data. Acoustic spectroscopy provides a robust and accurate approach to measuring this parameter. Working from the Navier-Stokes model of a compressible fluid one can show that the bulk viscosity makes a significant and measurable contribution to the frequency-squared acoustic attenuation. Here we employ this methodology to determine the bulk viscosity of Millipore water over a temperature range of 7 to 50 degrees Celsius. The measured attenuation spectra are consistent with the theoretical predictions, while the bulk viscosity of water is found to be approximately three times larger than its shear counterpart, reinforcing its significance in acoustic propagation. Moreover, our results demonstrate that this technique can be readily and generally applied to fluids to accurately determine their temperature dependent bulk viscosities.

  9. Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency

    International Nuclear Information System (INIS)

    An InP based quantum cascade laser heterostructure emitting at 4.6 μm was grown with gas-source molecular beam epitaxy. The wafer was processed into a conventional double-channel ridge waveguide geometry with ridge widths of 19.7 and 10.6 μm without semi-insulating InP regrowth. An uncoated, narrow ridge device with a 4.8 mm cavity length was epilayer down bonded to a diamond submount and exhibits 2.5 W maximum output power with a wall plug efficiency of 12.5% at room temperature in continuous wave operation

  10. Impacto de perfis de rádio ocultação GNSS na qualidade das Previsões de tempo do CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Luiz Fernando Sapucci

    2014-12-01

    Full Text Available Estudos sobre a sensibilidade dos modelos de previsão numérica de tempo a erros nas condições iniciais têm evidenciado a contribuição da assimilação de dados na melhoria do desempenho dos mesmos em descrever o estado futuro da atmosfera. Entre outras fontes de dados, a assimilação de perfis atmosféricos obtidos por rádio ocultação Global Navigation Satellite System (GNSS tem-se destacado como uma ferramenta adicional na redução das deficiências do sistema de coleta de dados meteorológicos. Com o intuito de explorar os benefícios dessa fonte adicional de dados na previsão numérica de tempo gerada pelo modelo de circulação geral atmosférico do CPTEC/INPE, foram realizados experimentos assimilando perfis atmosféricos de altura geopotencial e umidade obtidos por rádio ocultação GNSS, utilizando dados da constelação Constellation Observing System for Meteorology Ionosphere & Climate (COSMIC, para os meses de janeiro e julho de 2009. Os resultados mostraram que o impacto é significativamente positivo durante o verão em todas as variáveis de estado, com ganhos expressivos na extensão das previsões válidas (coeficiente de correlação de anomalia acima de 60%, os quais foram em alguns casos superiores a 48 horas. Esse impacto foi ainda maior sobre a América do Sul com resultados positivos mesmo durante o inverno.

  11. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    Science.gov (United States)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  12. Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si

    International Nuclear Information System (INIS)

    High-quality InGaAsP/InP multi-quantum wells (MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing a monolithically integrated silicon laser is achieved. Indium phosphide layer on silicon, the pre-requisite for the growth of quantum wells is achieved via nano-epitaxial lateral overgrowth (NELOG) technique from a defective seed indium phosphide layer on silicon. This technique makes use of epitaxial lateral overgrowth (ELOG) from closely spaced (1 µm) e-beam lithography-patterned nano-sized openings (∼300 nm) by low-pressure hydride vapor phase epitaxy. A silicon dioxide mask with carefully designed opening patterns and thickness with respect to the opening width is used to block the defects propagating from the indium phosphide seed layer by the so-called necking effect. Growth conditions are optimized to obtain smooth surface morphology even after coalescence of laterally grown indium phosphide from adjacent openings. Surface morphology and optical properties of the NELOG indium phosphide layer are studied using atomic force microscopy, cathodoluminescence and room temperature µ-photoluminescence (µ-PL) measurements. Metal organic vapor phase epitaxial growth of InGaAsP/InP MQWs on the NELOG indium phosphide is conducted. The mask patterns to avoid loading effect that can cause excessive well/barrier thickness and composition change with respect to the targeted values is optimized. Cross-sectional transmission electron microscope studies show that the coalesced NELOG InP on Si is defect-free. PL measurement results indicate the good material quality of the grown MQWs. Microdisk (MD) cavities are fabricated from the MQWs on ELOG layer. PL spectra reveal the existence of resonant modes arising out of these MD cavities. A mode solver using finite difference method indicates the pertinent steps that should be adopted to realize lasing. (invited paper)

  13. Optimization and Performance Analysis of Bulk-Driven Differential Amplifier

    Directory of Open Access Journals (Sweden)

    Antarpreet kaur

    2014-04-01

    Full Text Available In recent years, there has been an increasing demand for high-speed digital circuits at low power consumption. This paper presents a design of input stage of Operational Amplifier i.e cascode differential amplifier using a standard 65nm CMOS Technology.A comparison betweem gate-driven, bulk-driven and cascode bulk driven bulk-driven differential amplifier is described. The Results demonstrate that CMMR is 83.98 dB, 3-dB Bandwidth is 1.04 MHz. The circuit dissipate power of 28uWunder single supply of 1.0V.

  14. Engineering nanostructural routes for enhancing thermoelectric performance: bulk to nanoscale

    Directory of Open Access Journals (Sweden)

    Rajeshkumar eMohanraman

    2015-11-01

    Full Text Available Thermoelectricity is a very important physical property, especially its significance in heat-electricity conversion. If thermoelectric devices can be effectively applied to the recovery of the renewable energies, such as waste heat and solar energy, the energy shortage and global warming issues may be greatly relieved. This review focusses recent developments on the thermoelectric performance of a low-dimensional material, bulk nanostructured materials, conventional bulk materials etc. Particular emphasis is given on, how the nanostructure in nanostructured composites, confinement effects in one-dimensional nanowires and doping effects in conventional bulk composites plays an important role in ZT enhancement.

  15. Bulk sound velocity of porous materials at high pressures

    Institute of Scientific and Technical Information of China (English)

    耿华运; 吴强; 谭华; 蔡灵仓; 经福谦

    2002-01-01

    A correction of Walsh's method for bulk sound velocity calculation for shocked porous materials is accomplishedbased on the Wu-Jing thermodynamic equation of state. The corrected bulk velocities for solid and porous sampleswith low porosities are in good agreement with the corresponding experimental data published previously. On the basisof this corrected equation, the influence of thermoelectrons on the bulk velocity of shocked materials is discussed indetail at pressures of 50, 70 and 200 GPa. Some interesting phenomena are revealed, which seem to be the uniquefeatures of a dynamic-pressure-loading process and could not be found in static experiments.

  16. Alternative technology of nanoparticles consolidation in the bulk material

    Directory of Open Access Journals (Sweden)

    VOLKOV Georgiy Michailovich

    2016-02-01

    Full Text Available Theoretical bases and technological principles of single-stages nanoparticles conso-lidation into bulk material were offered. The theory was implemented on the model system of carbon-carbon in the process of high-temperature pyrolysis of hydrocar-bons. The bulk carbon nanomaterial with unique technical properties was produced. That made it possible to create engineering products which technical characteristics are higher than the existing level in the world. The proposed theory can be adapted to other gas-phase, liquid phase and secondary crystallization processes to create bulk nanomaterials of another chemical composition with no less unique properties.

  17. Bulk Local States and Crosscaps in Holographic CFT

    CERN Document Server

    Nakayama, Yu

    2016-01-01

    In a weakly coupled gravity theory in the anti-de Sitter space, local states in the bulk are linear superpositions of Ishibashi states for a crosscap in the dual conformal field theory. The superposition structure can be constrained either by the microscopic causality in the bulk gravity or the bootstrap condition in the boundary conformal field theory. We show, contrary to some expectation, that these two conditions are not compatible to each other in the weak gravity regime. We also present an evidence to show that bulk local states in three dimensions are not organized by the Virasoro symmetry.

  18. Unipolar memristive switching in bulk positive temperature coefficient ceramic thermistor

    Science.gov (United States)

    Wu, Hongya; Wang, Caihui; Fu, Hua; Zhou, Ji; Zheng, Shuzhi

    2016-01-01

    A memristive switching phenomena was investigated in macroscale bulk positive temperature coefficient (PTC) thermosensitive ceramics. (BaxSr1-x)TiO3, which is a well-known PTC thermistor, was taken as an example to analyze the memristive behavior of those macroscale bulk ceramics. Hysteretic current-voltage (I-V) characteristics, which are the features of memristor were obtained. The origin of the effect is attributed to the PTC thermosensitive characteristic of the bulk ceramics, and a switching mechanism driven by competing field-driven heat generation and heat dissipation was proposed.

  19. Spontaneous localization of bulk fields: the six-dimensional case

    International Nuclear Information System (INIS)

    We study N=2 supersymmetric gauge theories with d=6 bulk and d=4 brane fields charged under a U(1) gauge symmetry. Radiatively induced Fayet-Iliopoulos terms lead to an instability of the bulk fields. We compute the profile of the bulk zero modes and observe the phenomenon of spontaneous localization towards the position of the branes. While this mechanism is quite similar to the d=5 case, the mass spectrum of the excited Kaluza-Klein modes shows a crucial difference

  20. Negative Effects of Sludge Bulking in Membrane Bio-Reactor

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; HUANG Zhi; REN Nanqi; MENG Qingjuan

    2006-01-01

    Sludge bulking property of membrane bio-reactor was investigated in this study through contrast research. When the sludge bulking appeared, the removal efficiency of COD in membrane bio-reactor increased slightly through the function of filamentous bacteria. However, the negative effects of the higher net water-head differential pressures, the high block rate of membrane pore and the great quantity of filamentous bacteria at the external surface presented at the same time. Thus, plenty of methods should be performed to control sludge bulking once it happened in membrane bio-reactor.