WorldWideScience

Sample records for bulk semi-insulating inp

  1. Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP

    CERN Document Server

    Dubecky, F; Necas, V; Sekacova, M; Fornari, R; Gombia, E; Bohácek, P; Krempasky, M; Pelfer, P G

    2002-01-01

    In this work, bulk semi-insulating (SI) InP wafers of four various producers have been used for the fabrication of radiation detectors. The tested detectors were prepared starting from the different materials in just one run in order to be sure that their performances were not influenced by technological processes. On one type of material various electrode technologies were used with the aim to analyze their role on the detector performances. The fabricated detectors were tested for detection performance by the sup 2 sup 4 sup 1 Am and sup 5 sup 7 Co gamma-ray sources at below room temperature. The best detector was calibrated and tested also using sup 1 sup 3 sup 3 Ba and sup 1 sup 3 sup 7 Cs gamma sources. The best detector gives an energy resolution of 7 keV FWHM and a charge collection efficiency (CCE) of 82% (59.5 keV photopeak) at a temperature of 216 K. According to our knowledge, these results are the best which have been obtained with InP radiation detectors till now. The operation of SI InP detector...

  2. Growth of semi-insulating InP through nuclear doping

    International Nuclear Information System (INIS)

    Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form VInInp+ Inp++ complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

  3. Characterisation of vertical gradient freeze semi-insulating InP for use as a nuclear radiation detector

    International Nuclear Information System (INIS)

    The performance of a nuclear radiation detector fabricated from Vertical Gradient Freeze (VGF) semi-insulating Fe-doped InP was investigated. Pulse height spectra were acquired when the detector was irradiated with alpha particles from 241Am, as a function of temperature and detector bias voltage. The spectroscopic performance of the detector was limited at room temperature due to the presence of a high leakage current. At a bias of -150 V, a room temperature leakage current density of 2.4x10-6 A/mm2 was observed which reduced to 7.1x10-8 A/mm2 at a temperature of -21 degree sign C. By biasing the irradiated detector contact at either a negative or positive potential, the charge collection efficiency (CCE) was measured separately for pulses produced predominantly by electron transport and for pulses produced predominantly by hole transport, respectively. At -21 degree sign C a maximum CCE of 72% was obtained for the electron signal and 44% for the hole signal. As a function of bias the CCE of the electrons remained constant in the temperature range -21 degree sign C to +19 degree sign C, whilst that of the holes exhibited a significant variation. By comparison with the Hecht relationship estimates of the carrier mobility-lifetime (μτ) products are deduced, which are similar for both holes and electrons and in the range 5x10-7-8x10-7 cm2/V. A reduction in μτ is observed at lower temperature for holes, whereas the value for electrons remains constant over the temperature range studied

  4. Semi-insulating bulk GaAs thermal neutron imaging arrays

    International Nuclear Information System (INIS)

    Prototype thermal neutron imaging arrays have been fabricated from semi-insulating (SI) bulk GaAs. The arrays are 1 mm square Schottky diodes arranged in a 5 x 5 matrix. GaAs Schottky barrier radiation detectors are relatively radiation hard and can withstand higher neutron and gamma ray exposure fields than MOS-based Si diode imaging arrays. The devices use 10B to convert incident thermal neutrons to energetic Li ions and alpha particles. The truncated field effect observed with SI bulk GaAs detectors produces high and los field regions in the device. Electron-hole pairs produced in the active (or high field) region of the device contribute to the observed induced charge, whereas electron-hole pairs produced in the low field region contribute very little to the induced charge. The effect is manipulated to reduce the background gamma ray interaction rate in the devices. Preliminary results show no indication of device degradation after exposure to a total thermal neutron fluence of 1.73 x 1013 n/cm2. Images have been formed of 1, 1.5, and 2 mm holes and crosses from 2 mm thick Cd templates

  5. Terahertz Radiation from Large Aperture Bulk Semi-insulating GaAs Photoconductive Dipole Antenna

    Institute of Scientific and Technical Information of China (English)

    施卫; 贾婉丽; 侯磊; 许景周; 张希成

    2004-01-01

    We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3mm between two Au/Ge/Ni electrodes, triggered by 800nm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than that of a normal GaAs dipole antenna.

  6. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Energy Technology Data Exchange (ETDEWEB)

    Yatskiv, R. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic)], E-mail: yatskiv@ufe.cz; Zdansky, K. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Pekarek, L. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8 (Czech Republic)

    2009-01-21

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a {sup 241}Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  7. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    International Nuclear Information System (INIS)

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  8. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Science.gov (United States)

    Yatskiv, R.; Zdansky, K.; Pekarek, L.

    2009-01-01

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature ( T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  9. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.

    2004-07-01

    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  10. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2009-01-01

    Roč. 598, č. 3 (2009), s. 759-763. ISSN 0168-9002 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detector * InP * crystal growth Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.317, year: 2009

  11. Electron Spin Relaxation in Intrinsic Bulk InP Semiconductor

    CERN Document Server

    Ma, Hong; Wang, Lihua; Ma, Guohong

    2010-01-01

    Electron spin dynamics is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses in intrinsic bulk Indium Phosphide (InP) crystal at room temperature and 70 K. The reflectivity change from bleaching into absorption enhancement is observed with increasing pump photon energy. This phenomenon can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Although electron spin relaxation process at room temperature is much faster than that at 70K, carrier density dependence of electron spin relaxation shows similar tendency. With increasing carrier density, the electron spin relaxation time increases initially and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.

  12. Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance

    Czech Academy of Sciences Publication Activity Database

    Dubecký, F.; Zat'ko, B.; Hubík, Pavel; Boháček, P.; Gombia, E.; Chromík, Š.

    Piscataway, N.J : IEEE Operation Center, 2008 - (Haščík, Š.; Osvald, J.), 295 - 298 ISBN 978-1-4244-2325-5. [International Conference on Advanced Semiconductor Devices and Microsystems /7./. Smolenice Castle (SK), 12.10.2008-16.10.2008] R&D Projects: GA AV ČR IAA1010404 Institutional research plan: CEZ:AV0Z10100521 Keywords : radiation detector * semi-insulating GaAs * ohmic contact * work function Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. 3英寸半绝缘4H-SiC单晶的研制%Bulk Growth of the Semi-Insulating 3-inch 4H-SiC

    Institute of Scientific and Technical Information of China (English)

    王利杰; 冯玢; 洪颖; 孟大磊; 王香泉; 严如岳

    2011-01-01

    报道了采用物理气相传输(PVT)法进行SiC单晶生长方面取得的最新进展,成功研制得到固态微波器件急需的3英寸(75 mm)半绝缘4H-SiC衬底.使用计算机模拟技术,进行了3英寸(75 mm)4H-SiC晶体生长的热场设计,并在此基础上研制出适合3英寸(75 mm)4H-SiC PVT生长的晶体生长设备,采用喇曼光谱对晶体生长表面5点进行测试,结果均为单一的4H晶型,采用非接触电阻率面分布(COREMA)方法测得晶片电阻率为109~1012Ω·cm.微管道缺陷(MPD)测量采用熔融KOH腐蚀法,测得平均微管道密度为104个/cm2,其中晶片的30%区域微管道缺陷小于10个/cm2.使用X射线双晶衍射测试得到其半高宽(FWHM)为31 arcsec,说明所获得的晶体具有良好的结晶完整性.%The latest progress in the growth of the silicon carbide (SiC) by physical vapor transport (PVT) were reported. The 3-inch semi-insulating 4H-SiC substrate for microwave devices was successfully achieved. Using computer simulation technology, the thermal field of crystal growth was designed and the growth equipment of 3-inch 4H-SiC was developed. The polytype of the crystal was determined with Raman spectroscopy. The results show that 5 points on the as-grow surface are the single 4H polytype. The resistivity of the wafer is 109 - 1012 Ω ·cm measured by SemiMap COREMA-WT (contactless resistivity mapping). The crystallinity of the grown crystal was characterized by the molten KOH etching and X-ray rocking curve. The micropipe defects density (MPD) is averagely 104 cm-2,but in the 30% region of the wafer, the MPD is lower than 10 cm-2. The full width at half maximum (FWHM) is 31 arcsec measured by double-crystal XRD, the result shows that the crystalline quality is very good.

  14. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    Science.gov (United States)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  15. Semi-insulating InP detectors with guard ring electrode

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav; Gorodynskyy, Vladyslav

    Piscataway : Institute of Electrical and Electronic Engineers, 2008, ---. ISBN 978-1-4244-2258-6. ISSN 1092-8669. [IPRM 2008 - Indium Phosphide and Related Materials Conference /20./. Versailles (FR), 25.05.2008-29.05.2008] R&D Projects: GA AV ČR KAN400670651; GA AV ČR(CZ) KAN401220801 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detection * semiconductor materials Subject RIV: JB - Sensors, Measurment, Regulation

  16. Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe

    International Nuclear Information System (INIS)

    The availability of large-size, detector-grade CdZnTe crystals in large volume and at affordable cost is a key to the further development of radiation-detector applications based on this II-VI compound. The high pressure Bridgman technique that supplies the bulk of semi-insulating CdZnTe crystals used in X-ray, γ-ray detector and imaging devices at present is hampered by material issues that limit the yield of large-size and high-quality crystals. These include ingot cracking, formation of pipes, material homogeneity and the reproducibility of the material from growth to growth. The incorporation of macro defects in the material during crystal growth poses both material quality limitations and technological problems for detector fabrication. The effects of macro defects such as Te inclusions and pipes on the charge-transport properties of CdZnTe are discussed in this paper. Growth experiments designed to study the origin and formation of large defects are described. The importance of material-crucible interactions and control of thermodynamic parameters during crystal growth are also addressed. Opportunities for growth improvements and yield increases are identified

  17. Creation and suppression of point defects through a kick-out substitution process of Fe in InP

    OpenAIRE

    Fung, S; Zhao, YW; Dong, HW; Chen, YH; Zhang, YH; Jiao, JH; Zhao, JQ; Lin, LY

    2002-01-01

    Indium antisite defect In P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In P defect is enhanced by the indium interstitial that is caused by the kick out of I...

  18. Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

    OpenAIRE

    S Fung; Beling, CD; Youwen, Zhao; Xiaoliang, Xu; Min, Gong; Niefeng, Sun; Tongnian, Sun; Xudong, Chen; Ronggui, Zhang; Silin, Liu

    1998-01-01

    Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antis...

  19. Advanced BCD technology with vertical DMOS based on a semi-insulation structure

    Science.gov (United States)

    Kui, Ma; Xinghua, Fu; Jiexin, Lin; Fashun, Yang

    2016-07-01

    A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated. Project supported by the National Natural Science Foundation of China (No. 61464002), the Science and Technology Fund of Guizhou Province (No. Qian Ke He J Zi [2014]2066), and the Dr. Fund of Guizhou University (No. Gui Da Ren Ji He Zi (2013)20Hao).

  20. Transport phenomena in X and γ ray semi-insulator detector: a new charge correction approach

    OpenAIRE

    Zanichelli, Massimiliano

    2010-01-01

    This research is part of the broader project of study and application of II-VI semi-insulating materials and especially of Cadmium and Zinc Telluride (CdZnTe or CZT). The current interest about these ternary compounds, such as semi-insulating materials for high energy photon detectors is mainly due to their high energy-gap that makes these materials ideal for applications at room temperature avoiding noise problems due to leakage current. Within this class of materials CZT is particularly ...

  1. Specific features of the photoconductivity of semi-insulating cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  2. Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures

    Energy Technology Data Exchange (ETDEWEB)

    Gaubas, E. [Institute of Materials Science, Vilnius University, Applied Research, Sauletekio av. 10, Lt-10223, Vilnius (Lithuania)], E-mail: eugenijus.gaubas@ff.vu.lt; Vaitkus, J.; Kazlauskas, K.; Zukauskas, A. [Institute of Materials Science, Vilnius University, Applied Research, Sauletekio av. 10, Lt-10223, Vilnius (Lithuania); Grant, J.; Bates, R.; O' shea, V. [Department of Physics and Astronomy, University of Glasgow (United Kingdom); Strittmatter, A.; Bimberg, D. [Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Sekr. Pn 5-2, Hardenbergstr. 36, D-10623 Berlin (Germany); Gibart, P. [Lumilog 2720, Chemin Saint Bernard Les Moulins I, F-06220 Vallauris (France)

    2007-12-11

    Variations of the photoluminescence spectra and photoconductivity transients with proton and neutron fluence in the semi-insulating GaN-layered structures of different thickness are examined. It has been obtained that the intensity of the photoluminescence bands associated with grown-in defects of the semi-insulating GaN layers decreases non-linearly with irradiation of high-energy proton and neutron fluence in the range of 10{sup 14}-10{sup 16} cm{sup -2}. The recombination and trapping lifetimes also exhibit a significant decrease with fluence which is most prominent in thin epilayers. Defect parameters determined from lifetime variations with temperature and from the relative changes of the photoluminescence bands are discussed.

  3. Spectroscopic performance of semi-insulating GaAs detectors for digital radiography

    International Nuclear Information System (INIS)

    We studied pixel radiation detectors for X-ray radiography based on semi-insulating GaAs: in particular, we investigated both annealed and non-annealed contact deposition techniques for the ohmic contact and both ring-guarded and non-guarded Schottky contact, in order to reduce the leakage current and to increase the maximum applied electric field. Spectroscopic characterization with a 60 keV 241 Am source has been performed. Among these different detectors, the CCE can reach 99±6%, while the energy resolution ΔE/E can go down to 4.1±0.2%

  4. Growth and properties of InP single crystals

    Science.gov (United States)

    Dun-fu, Fang; Xiang-xi, Wang; Yong-quan, Xu; Li-tong, Tan

    1984-04-01

    InP single crystals with various dopants including S, Sn, Zn and Fe have been grown successfully by the Czochralski method under high pressure with liquid encapsulation. It is found that by carefully adjusting the thermal symmetry of the heating field and by further improving the quality of the polycrystals and by dehydrating B 2O 3, twin-free InP crystals can be obtained even with a shoulder angle of up to 54°, and defects caused by thermal decomposition appear on the surface of the crystals during pulling. Furthermore, a comparison of the crystal perfection and uniformity between S-doped and Sn-doped InP crystals shows that the quality of the former is better than that of the latter. Dislocation-free Zn-doped p-InP single crystals without precipitates have also been easily obtained when the carrier concentration is greater than 2×10 18 cm -3 and the diameter less than 30 mm. By controlling the iron content, semi-insulating thermally stable single crystals of InP doped with ⩽0.03 wt% of Fe without precipitates and with a homogeneous resistivity can be produced.

  5. Doped (conducting) and undoped (semi-insulating) LB films: application to gas sensing

    Energy Technology Data Exchange (ETDEWEB)

    Perez, H. (C.E.A./CE Saclay, Service de Chimie Moleculaire, 91 Gif sur Yvette (France)); Barraud, A. (C.E.A./CE Saclay, Service de Chimie Moleculaire, 91 Gif sur Yvette (France))

    1993-11-23

    The present paper deals with the use of semi-insulating and conducting LB films as conductimetric sensors. The response of such sensors consists in conductivity changes induced by gas exposure. Examples collected in the literature are presented and show that the LB technique is very convenient for making continuous ultrathin organic materials exhibiting detection properties towards toxic gases (NO[sub 2], PH[sub 3],..). Very interesting results have been obtained using mixed LB films even if the conducting properties of the resulting material and the detection mechanism are not well understood. Some multifunctional materials are required exhibiting conduction properties for transduction and recognition properties' for selective detection. With that goal, the LB technique associated with organic chemistry provides undeniable advantages. (orig.)

  6. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    International Nuclear Information System (INIS)

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch. (semiconductor devices)

  7. On anomalous photo- and dark conductivity in semi-insulating CdTe

    International Nuclear Information System (INIS)

    An investigation of photoconductivity of semi-insulating single crystals of CdTe at 77 K has shown that a residual conductivity is noticed in the spectral interval of 0.8-2.0 Mkm. The amount of the residual conductivity depends upon quanta energy and is independent of intensity i.e. the observed residual conductivity has signs of anomalous photoconductivity. The measurement of dark conductivity in these crystals sometimes reveals an increase in conductivity by 4 orders when temperature is decreased from 250 to 77 K. The observed peculiarities are related to large potential fluctuations, the depth of the fluctuations being of the order of half-width of the forbidden zone

  8. Photo-induced changes of hydrogen bonding in semi-insulating iron-doped indium phosphide

    Science.gov (United States)

    Pajot, B.; Song, C.-Y.; Darwich, R.; Gendron, F.; Ewels, C.

    1995-09-01

    After illumination with 1-1.3 eV photons during cooling-down, metastable PH modes are observed by IR absorption at 5 K in semi-insulating InP:Fe. They correlate with the photo-injection of holes, but not with a change of the charge state of the H-related centres present at equilibrium. They are explained by a change of the bonding of H, induced by hole trapping, from IR-inactive centres to PH-containing centres, stable only below 80 K. One metastable centre has well-defined geometrical parameters and the other one could be located in a region near from the interface with (Fe,P) precipitates.

  9. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Institute of Scientific and Technical Information of China (English)

    Ma Xiangrong; Shi Wei; Ji Weili; Xue Hong

    2011-01-01

    A 4 mm gap semi-insulating(SI)GaAs photoconductive switch(PCSS)was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ.In the experiment,when the bias field was 4 kV,the switch did not induce self-maintained discharge but worked in nonlinear(lock-on)mode.The phenomenon is analyzed as follows:an exciton effect contributes to photoconduction in the generation and dissociation of excitons.Collision ionization,avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed.Under the combined influence of these factors,the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status.The characteristics of the filament affect the degree of damage to the switch.

  10. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Science.gov (United States)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  11. Dislocation-induced electronic levels in semi-insulated CdTe

    International Nuclear Information System (INIS)

    We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density 5 cm-2). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level EC-0.74 eV in CdTe and Cd1-xZnxTe (x<0.1), the materials of choice in today's detector technology. Our findings demonstrate that dislocation-induced defects can degrade charge collection in radiation detectors.

  12. Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS. Application to the effect of hydrogen in CdTe

    Science.gov (United States)

    Hage-Ali, M.; Yaacoub, B.; Mergui, S.; Samimi, M.; Biglari, B.; Siffert, P.

    1991-06-01

    Thermally stimulated current (TSC) and photo-induced current transient spectroscopy (PICTS) methods have been developed for the microscopic defect characterization in semi-insulating compound semiconductors. The capabilities of these methods are demonstrated by investigating the effects of hydrogen implantation or diffusion into semi-insulating cadmium telluride.

  13. Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts

    Czech Academy of Sciences Publication Activity Database

    Dubecký, F.; Oswald, Jiří; Kindl, Dobroslav; Hubík, Pavel; Dubecký, M.; Gombia, E.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Nečas, V.

    2016-01-01

    Roč. 118, Apr (2016), 30-35. ISSN 0038-1101 Institutional support: RVO:68378271 Keywords : photocurrent spectroscopy * semi-insulating GaAs * detectors * contacts Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.504, year: 2014

  14. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)

    R Srinivasan; K Ramachandran

    2008-11-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles.

  15. Effect of As Interstitial Diffusionon on the Properties of Undoped Semi-insulating LECGaAs

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Annealing was carried out at 950 and 1120 ℃ under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 ℃ for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect El2 (AsGaVGa ) can be decreased by about one order of magnitude by an evacuated annealing at 1120 ℃ for 2€? h followed by a fast cooling. The decrease in El2 concentration can also be suppressed by increasing the As pressure during annealing.

  16. High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs

    CERN Document Server

    da Silva, S L; de Oliveira, A G; Ribeiro, G M; da Silva, R L

    2014-01-01

    Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structu...

  17. Influence of substrate on the performances of semi-insulating GaAs detectors

    CERN Document Server

    Baldini, R; Nava, F; Canali, C; Lanzieri, C

    2000-01-01

    A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

  18. High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope

    Science.gov (United States)

    Marek, J.; Elliot, A. G.; Wilke, V.; Geiss, R.

    1986-12-01

    Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.

  19. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

    Institute of Scientific and Technical Information of China (English)

    HOU Qi-Feng; WANG Xiao-Liang; XIAO Hong-Ling; WANG Cui-Mei; YANG Cui-Bai; YIN Hai-Bo; LI Jin-Min; WANG Zhan-Guo

    2011-01-01

    Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate.It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

  20. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

    Science.gov (United States)

    Hou, Qi-Feng; Wang, Xiao-Liang; Xiao, Hong-Ling; Wang, Cui-Mei; Yang, Cui-Bai; Yin, Hai-Bo; Li, Jin-Min; Wang, Zhan-Guo

    2011-03-01

    Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35 eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

  1. Opto-spintronics in InP using ferromagnetic tunnel spin filters

    International Nuclear Information System (INIS)

    We demonstrate opto-spintronics using Fe-doped Indium Phosphide (InP). The method is based on optical orientation of InP conduction electron spins which are electrically detected in planar InP/oxide/Ni tunnel spin filters. We separate the optical excitation from electrical detection, avoiding thus additional interactions of photons with the ferromagnet. Interface engineering provides a surface iron accumulation and semiconducting Fe:In2O3 in the oxide tunnel barrier. The spin filtering effect switches to positive or negative asymmetry, depending on the Fe concentration in Fex:InP. With respect to the Fe-like electronic structure of these oxides, we can explain the opposite spin selection mechanisms as interface effects. In the temperature region where the InP mobility peaks, we find a maximum of spin-dependent asymmetry of ∼9% in semi-insulating Fe:InP (001), and show the electrical spin detection in hyperpolarized InP also at room temperature. Such robust electronic spin detection in an InP nanodevice is planned to complement dynamic nuclear polarization experiments. (fast track communication)

  2. Response of semi-insulating GaAs detectors to low energy protons

    International Nuclear Information System (INIS)

    The performance of semi-insulating GaAs detectors, grown with the LEC technique, has been studied by irradiating the Schottky diodes with 2 and 2.4 MeV monoenergetic protons in a pencil beam with sub-millimeter width (70 or 600 μm). The beam was moved across the surface of the front (Schottky) contact, in order to investigate the uniformity of the detection characteristics over the sensitive area of the diodes, and to study the electric field behavior around the Schottky contact. For each scanning position, a pulse-height spectrum was measured. Then, the charge collected and the energy resolution were obtained as a function of the irradiation position both on the contact and outside it. The data show that - the best spectroscopic response occurs for the beam with 70 μm width,; - when the beam is incident onto the contact, the energy resolution is between 1% and 5%, and the variation of the charge collected, for different irradiation position, is less than 30%,; - when the beam is incident onto the border of the contact (substrate is irradiated), the spectrum is degraded and no clear peak is present,; - collection of charge still occurs at distances up to about 500 μm from the border of the Schottky contact (for a pixel size of 200 μm), or up to about 200 μm (for a pixel diameter of 3 mm),; - saturation of the curve collected charge vs. reverse bias voltage occurs at about 100 V for both 2 MeV (range=32 μm) and 2.4 MeV protons (range=41 μm)

  3. Comparison of Geant4 with EGSnrc for Simulation of Gamma-Radiation Detectors Based on Semi-Insulating Materials

    CERN Document Server

    Skrypnyk, A I; Khazhmuradov, M A

    2011-01-01

    We considered GEANT4 version 4.9.4 with different Electromagnetic Physics Package for calculation of response functions of detectors based on semi-insulating materials. Computer simulations with GEANT4 packages were run in order to determine the energy deposition of gamma-quanta in detectors of specified composition (Mercuric (II) Iodide and Thallium Bromide) at various energies from 0.026 to 3 MeV. The uncertainty in these predictions is estimated by comparison of their results with EGSnrc simulations. A general good agreement is found for EGSnrc and GEANT4 with Penelope 2008 model of LowEnergy Electromagnetic package.

  4. When is an INP not an INP?

    Science.gov (United States)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  5. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

    International Nuclear Information System (INIS)

    The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements

  6. Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing

    Czech Academy of Sciences Publication Activity Database

    Žďánský, Karel; Gorodynskyy, Vladyslav; Pekárek, Ladislav

    2009-01-01

    Roč. 56, č. 5 (2009), s. 2997-3001. ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651; GA AV ČR(CZ) KAN401220801; GA AV ČR IBS2067354 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520 Keywords : radiation detection * semiconductor doping * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.591, year: 2009

  7. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

    International Nuclear Information System (INIS)

    Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. The X-ray response of InP: Part B, synchrotron radiation measurements

    CERN Document Server

    Owens, A; Bavdaz, M; Brammertz, G; Dubecky, F; Gostilo, V; Gryaznov, D; Haack, N; Krumrey, M; Loupilov, A

    2002-01-01

    In this, the second part of a detailed study into the X-ray response of InP, we present results of a series of X-ray measurements on a 3.142 mm sup 2 x180 mu m thick semi-insulating InP detector at the BESSY II and HASYLAB synchrotron radiation research facilities. Photon metrology was carried out at energies ranging from 8 to 100 keV. Additional measurements were made using radioactive and fluorescent target sources. At -60 deg. C, under full-area illumination, the FWHM energy resolution was 2.4 keV at 5.9 keV rising to 8.5 keV at 59.54 keV. Under pencil-beam illumination, the measured resolutions were generally less, being 2 keV FWHM at 8 keV rising approximately linearly to 5 keV at 100 keV. Analysis of the energy resolution function indicates that poor charge transport presently limit the performance of InP detectors and specifically hole trapping. This is borne out by the observed low-energy tailing of the pulse height spectra at intermediate and high energies. At very low count rates, it was found that ...

  9. Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating substrates

    Institute of Scientific and Technical Information of China (English)

    Chen Cang; Bai Song; Li Zhe-Yang; Wu Peng; Chen Zheng; Han Pin

    2009-01-01

    In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors(MESFETs)on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 μm gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave(CW)at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency(f_T)and the maximum frequency(f_(max))are 9 GHz and 24.9 GHz respectively. The simulation results of f_T and f_(max) are 11.4 GHz and 38.6 GHZ respectively.

  10. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    Science.gov (United States)

    Luan, Chongbiao; Wang, Bo; Huang, Yupeng; Li, Xiqin; Li, Hongtao; Xiao, Jinshui

    2016-05-01

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  11. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    Directory of Open Access Journals (Sweden)

    Chongbiao Luan

    2016-05-01

    Full Text Available A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  12. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystals

    International Nuclear Information System (INIS)

    Photoluminescence (PL) properties of semi-insulating Tl6SeI4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Since inhomogeneous line broadening and PL fatigue are related to the concentration of defects or impurities, the measurement of these two parameters is an effective method to screen sample quality. (paper)

  13. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystals

    Science.gov (United States)

    Kostina, S. S.; Peters, J. A.; Lin, W.; Chen, P.; Liu, Z.; Wang, P. L.; Kanatzidis, M. G.; Wessels, B. W.

    2016-06-01

    Photoluminescence (PL) properties of semi-insulating Tl6SeI4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Since inhomogeneous line broadening and PL fatigue are related to the concentration of defects or impurities, the measurement of these two parameters is an effective method to screen sample quality.

  14. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    International Nuclear Information System (INIS)

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III–V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage. (semiconductor devices)

  15. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  16. Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

    OpenAIRE

    Yusuke Sakai; S. Lawrence Selvaraj; Osamu Oda; Takashi Egawa

    2013-01-01

    The conditions for preparing normally-off GaN devices incorporating semi-insulating (SI) GaN materials are explored. The properties of SI GaN where carbon behaves as a deep level acceptor are predicted using a Shockley diagram. Metal-oxide-semiconductor (MOS) structures based upon these on SI-GaN layers are designed. The bandgap alignment of these structures is analyzed using Poisson equations. Normally-off operation is shown to be possible in devices featuring a thin n-GaN layer and SI-GaN l...

  17. Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

    Energy Technology Data Exchange (ETDEWEB)

    Koc, Emrah; Karakoese, Sema [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Salamov, Bahtiyar G. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Institute of Physics, National Academy of Science, 1143 Baku (Azerbaijan)

    2013-09-15

    This study focuses on analyses of secondary electron emission (SEE) at semiconductor surfaces when the sufficient conditions of space-time distribution occur. Experimental measurements and calculations with the approach of Townsend coefficients, which include the evaluations of ionization coefficient ({alpha}) and SEE coefficient ({gamma}) were performed in high-ohmic InP, GaAs, and Si semiconductor cathodes with argon and air environments in a wide range of E/N (300-10 000 Td). The direct calculations of {gamma} were carried out to determine the behavior of cold-semiconductor cathode current in a wide range of microgaps (45-525 {mu}m). Paschen curves are interpreted in the dependence of large pd range on breakdown voltage through {gamma} and {alpha}/N. Ion-induced secondary electrons exhibit the direct behaviors affecting the timescale of breakdown evolution in the vicinity of the Paschen minimum during the natural bombardment process with ions of semiconductor cathodes. Also, when {alpha}/N rapidly drops and the excitations of gas atoms densely occupy the gas volume, we determined that the photoelectric effect provides a growth for electron emission from semiconductor surfaces at the breakdown stage at the reduced values of E/N. At all pressures, the emission magnitudes of electrons liberated by semiconductor cathodes into vacuum are found as {gamma}{sub InP} > {gamma}{sub GaAs} > {gamma}{sub Si} in breakdown evolution. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  19. Low-defect-density bulk semi-insulating GaN:Fe: optical characterization as a tool for nondestructive doping assessment

    Czech Academy of Sciences Publication Activity Database

    Gladkov, Petar; Paskova, T.; Hulicius, Eduard; Preble, E.; Evans, K.R.

    Warrendale: MRS , 2011. s. 85. [International Conference on Nitride Semiconductors /9./ (ICNS 9). 10.07.2011-15.07.2011, Glasgow] Grant ostatní: US Missile Defense AgencyUSA(US) HQ0147-09-C-0005 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaN * otical absorption * Fe-doping Subject RIV: BM - Solid Matter Physics ; Magnetism

  20. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    International Nuclear Information System (INIS)

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm

  1. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment

    CERN Document Server

    Ivanco, J; Darmo, J; Krempasky, M; Besse, I; Senderak, R

    1999-01-01

    It is generally agreed that the substrate material quality plays a key role in the performance of back-to-back detectors of ionising radiation based on semi-insulating (SI) material. The aim of this paper is to evaluate usually overlooked problem, namely the influence of the Schottky contact preparation on detector performance. We report on different approaches to modify and control the quality of the metal/SI GaAs interface via a treatment of the SI-GaAs surface by means of low-temperature hydrogen plasma and wet etching. The measured electrical and detecting properties of such structures display a strong dependence on the history and the way the GaAs surface is treated prior to the metal evaporation. We point out, therefore, that the semiconductor surface treatment before the Schottky metallization plays a role of comparable importance to the influence of the SI-GaAs substrate properties on detector performances. (author)

  2. An analysis of the shape of a luminescence band induced by free electron-to-carbon atom transitions in semi-insulating undoped GaAs crystals

    CERN Document Server

    Glinchuk, K D; Prokhorovich, A V; Strilchuk, O N

    2001-01-01

    The shape of a photoluminescence (band observed due to recombination of free electrons on carbon atoms) in semi-insulating undoped GaAs crystals is analyzed at different temperatures (T=4.8 to 77 K). It is shown that at low temperatures the shape essentially differs from the theoretical one while at high temperatures is very close to it for radiative transitions of free electrons to isolated shallow acceptors. The observed difference of the experimental and theoretical shapes of the photoluminescence band is connected with the broadening of carbon-induced acceptor levels, resulting from the influence of electric fields of randomly distributed ionized acceptors and donors on isolated carbon atoms. Coincidence of the shapes is connected with a considerable in the energy of free carriers

  3. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    International Nuclear Information System (INIS)

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm−3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼1014 cm−3). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented

  4. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Science.gov (United States)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.

    2015-07-01

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  5. Colloidal InP nanocrystal

    International Nuclear Information System (INIS)

    Full text: InP nanodots with the diameter of 4-10 nm were synthesized using sol-gel method. The nanodot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and X-ray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. The synthesis of InP semiconductor nanodots was performed in a round-bottom three-neck flask equipped with a magnetic stirrer and heater with temperature control unit. The Na3P was obtained as a result of reaction of sodium and white phosphorous (similar as for GaP nanodots). The reaction mixture turned dark during synthesis due to the formation of Na3P suspension. The subsequent synthesis of indium phosphide nanodots was carried out by rapid injection of a suspension of sodium phosphide, maintained at room-temperature into a high stirred solution of indium chloride heated 150 degrees Celsius under N2 atmosphere. InCl3 + Na3P → InP + 3NaCl. The reaction mixture was then maintained at the fixed temperature for 2 h and then promptly cooled to room temperature using an ice-water bath. A solution containing 50% of ethanol and 50% of distilled water was used to dissolve the sodium chloride precipitated at the same time with the InP nanoparticles.

  6. The X-ray response of InP

    Energy Technology Data Exchange (ETDEWEB)

    Owens, Alan E-mail: aowens@astro.estec.esa.nl; Bavdaz, M.; Gostilo, V.; Gryaznov, D.; Loupilov, A.; Peacock, A.; Sipila, H

    2002-07-21

    We present the results of X-ray measurements on a prototype InP detector. The device was fabricated from Fe-doped bulk material of size 3x3x0.18 mm{sup 3}. X-ray measurements have been carried out using a number of radioactive and fluorescent target sources. The detector energy response function was found to be linear over the energy range 5.9-88 keV with an average rms non-linearity of 0.7%, consistent with statistics. At a detector temperature of -60 deg. C, the FWHM energy resolution under full-area illumination was 2.5 at 5.9 keV rising to 12 at 88 keV. Analysis of the energy resolution function indicates that poor charge transport presently limits the performance of InP detectors.

  7. The X-ray response of InP

    International Nuclear Information System (INIS)

    We present the results of X-ray measurements on a prototype InP detector. The device was fabricated from Fe-doped bulk material of size 3x3x0.18 mm3. X-ray measurements have been carried out using a number of radioactive and fluorescent target sources. The detector energy response function was found to be linear over the energy range 5.9-88 keV with an average rms non-linearity of 0.7%, consistent with statistics. At a detector temperature of -60 deg. C, the FWHM energy resolution under full-area illumination was 2.5 at 5.9 keV rising to 12 at 88 keV. Analysis of the energy resolution function indicates that poor charge transport presently limits the performance of InP detectors

  8. Studies on semiconductors based on InP with sub-ps response times

    International Nuclear Information System (INIS)

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 μm (1.55 μm) were successfully achieved in MQW (coupled QW) structures. (orig.)

  9. An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes

    International Nuclear Information System (INIS)

    We obtain an effective parametrization of the bulk electronic structure of InP within the tight-binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging up to 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire range of sizes, establishing the effectiveness and transferability of the obtained parameter strengths

  10. CNPq/INPE-LANDSAT system

    Science.gov (United States)

    Debarrosaguirre, J. L.

    1985-01-01

    The current status of the Brazilian LANDSAT facilities operated by Instituto de Pesquisas Espaciais (INPE) and the results achieved during the period from October 1, 1984 to August 31, 1985 are presented. INPE's Receiving Station at Cuiaba, MT, operates normally the two tracking and receiving systems it has installed, the old one (1973) for Band S and the new one (February 1983) for dual S- and X-band. Both MSS and TM recording capabilities are functional. Support to the NASA Backup Plan for MSS data also remains active. Routine recordings are being made for LANDSAT-5 only, for both MSS and TM. Originally, MSS was recorded over the full acquisition range. However, since December, 1984, due to further reduction of operational expenses, both instruments are being recorded over Brazilian territory only.

  11. Photoconductivity relaxation in nanostructured InP

    International Nuclear Information System (INIS)

    We show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures produced by anodization of InP substrates can be controlled through the control of their morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. (authors)

  12. Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF6/O2 inductively coupled plasma

    International Nuclear Information System (INIS)

    The author investigated the etching characteristics of semi-insulating (SI) and n-doped (n-) 4H-SiC substrates at a high etch rate of about 2 μm/min using high-density SF6/O2 inductively coupled plasma. The etch rate of SI-SiC was found to be lower than that of n-SiC, and the etching profile of SI-SiC showed retrograde features with a larger sidewall angle and a rounder etched bottom compared to n-SiC. These characteristics are attributed to the difference in wafer heating and negative charging of the sidewall during plasma etching between both substrates. The temperature of n-SiC increases by radiative heating from the high-density plasma during etching because of the higher free-carrier absorption compared to SI-SiC. Furthermore, the negative charge buildup at the sidewall of SI-SiC becomes stronger because of the lower electrical conductivity compared to n-SiC.

  13. Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhong-Tang; XING Zhi-Gang; GUO Li-Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    Semi-insulating (SI) GaN is grown using N2 as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using H2 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 104Ω/sq to 10Ω Q/sq by changing the NL carrier gas from H2 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the film are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using H2 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the film roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN significantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.

  14. The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

    International Nuclear Information System (INIS)

    In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 μm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates

  15. The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

    Science.gov (United States)

    Zatko, B.; Sagatova, A.; Bohacek, P.; Sedlackova, K.; Sekacová, M.; Arbet, J.; Necas, V.

    2016-01-01

    In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 μm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates.

  16. The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

    International Nuclear Information System (INIS)

    100 keV hydrogen ion implantation has been carried out on undoped semi-insulating (1 0 0) gallium arsenide single crystals for various ion doses at room temperature. The structural properties due to high dose, low energy hydrogen ion implantation has been investigated using X-ray double crystal diffractometry (DCD) analysis, Rutherford backscattering spectrometry and channeling (RBS/C) experiments and transmission electron microscopy (TEM) analysis. By using DCD analysis, the value of elastic lattice strain for the ion doses of 1x1016, 1x1018 ions/cm2 has been estimated to be 2.1x10-3 and 3.2x10-3, respectively. The RBS spectra in the channeling mode for the high dose implantations (1017 and 1018 ions/cm2) show a high yield indicating a highly damaged region near the range of the implanted hydrogen ions. Particularly, for the dose 1018 ions/cm2, a heavily damaged region at the surface can be observed. The TEM results evidenced that no amorphization occurred for the dose 1018 ions/cm2. From TEM characterisation, it is also observed that there are no hydrogen bubbles present in the implanted region. But small dislocation loops have been identified. The projected range of implanted hydrogen ions and the thickness of the implanted layer obtained by RBS and TEM analysis are compared with the TRIM calculations. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  17. Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merchant, S K E; Lloyd-Hughes, J; Parkinson, P; Herz, L M; Johnston, M B [Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU (United Kingdom); Sirbu, L; Tiginyanu, I M [National Centre for Materials Study and Testing, Technical University of Moldova, and Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, MD-2004 (Moldova, Republic of)], E-mail: s.merchant@physics.ox.ac.uk, E-mail: m.johnston@physics.ox.ac.uk

    2008-10-01

    We have investigated the terahertz conductivity of extrinsic and photoexcited electrons in nanoporous indium phosphide (InP) at different pore densities and orientations. The form of electronic transport in the film was found to differ significantly from that for bulk InP. While photo-generated electrons showed Drude-like transport, the behaviour for extrinsic electrons deviated significantly from the Drude model. Time-resolved photoconductivity measurements found that carrier recombination was slow, with lifetimes exceeding 1 ns for all porosities and orientations. When considered together, these findings suggest that the surfaces created by the nanopores strongly alter the dynamics of both extrinsic and photoexcited electrons.

  18. The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Udhayasankar, M.; Kumar, J.; Ramasamy, P. [Crystal Growth Centre, Anna University, Chennai (India); Sekar, K.; Sundaravel, B. [Institute of Physics, Sachivalaya, Marg, Bhubaneswar (India); Ferrari, C.; Lazzarini, L. [MASPEC-CNR, Via Chiavari 18/A, 43100 Parma (Italy); Magudapathy, P.; Nair, K.G.M. [Materials Science Division, IGCAR, Kalpakkam (India)

    1999-03-01

    100 keV hydrogen ion implantation has been carried out on undoped semi-insulating (1 0 0) gallium arsenide single crystals for various ion doses at room temperature. The structural properties due to high dose, low energy hydrogen ion implantation has been investigated using X-ray double crystal diffractometry (DCD) analysis, Rutherford backscattering spectrometry and channeling (RBS/C) experiments and transmission electron microscopy (TEM) analysis. By using DCD analysis, the value of elastic lattice strain for the ion doses of 1x10{sup 16}, 1x10{sup 18} ions/cm{sup 2} has been estimated to be 2.1x10{sup -3} and 3.2x10{sup -3}, respectively. The RBS spectra in the channeling mode for the high dose implantations (10{sup 17} and 10{sup 18} ions/cm{sup 2}) show a high yield indicating a highly damaged region near the range of the implanted hydrogen ions. Particularly, for the dose 10{sup 18} ions/cm{sup 2}, a heavily damaged region at the surface can be observed. The TEM results evidenced that no amorphization occurred for the dose 10{sup 18} ions/cm{sup 2}. From TEM characterisation, it is also observed that there are no hydrogen bubbles present in the implanted region. But small dislocation loops have been identified. The projected range of implanted hydrogen ions and the thickness of the implanted layer obtained by RBS and TEM analysis are compared with the TRIM calculations. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  19. Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

    International Nuclear Information System (INIS)

    Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

  20. Response of semi-insulating 100{mu}m thick GaAs detector for {alpha}-particles, {gamma}-rays and X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Kordyasz, A.J. [Heavy Ion Laboratory, Warsaw University, ul. Pasteura 5a, 02-093 Warsaw (Poland)]. E-mail: kord@slcj.uw.edu.pl; Strzelecka, S.G. [Institute of Electronic Materials Technology, Warsaw (Poland); Kownacki, J. [Heavy Ion Laboratory, Warsaw University, ul. Pasteura 5a, 02-093 Warsaw (Poland); Dobrzanski, L. [Institute of Electronic Materials Technology, Warsaw (Poland); Hruban, A. [Institute of Electronic Materials Technology, Warsaw (Poland); OrIowski, W. [Institute of Electronic Materials Technology, Warsaw (Poland); Wegner, E. [Institute of Electronic Materials Technology, Warsaw (Poland); Reissig, L. [Center for Inter-Faculty Individual Studies in Mathematical and Natural Sciences, University of Warsaw, Warsaw (Poland)]. E-mail: louisa@slcj.uw.edu.pl

    2005-06-21

    The 100{mu}m thick, transmission, fully depleted GaAs Schottky barrier detector fabricated from LEC bulk GaAs crystals has been tested. The basic structure of the detector consists of a Cr/Au Schottky contact and an Au/Ge/Ni/Au alloyed ohmic contact. Pulse height spectra for {alpha}-particles resulting from irradiation with triple source {sup 239}Pu, {sup 241}Am, {sup 244}Cm, with energies 5.155, 5.486, 5.805MeV were acquired. The energy resolution for these energies was better than 10keV (1.8%). Using {sup 241}Am 5.486MeV {alpha}-particles a charge collection efficiency (CCE) of about 94% was obtained at 570V bias potential. The spectra of low-energy {gamma}-rays 59.5keV and X-rays with average energy 16.2keV from {sup 241}Am source measured at room temperature are presented. An energy resolution of about 6.1keV (10.3%) FWHM at 59.5keV was obtained.

  1. Response of semi-insulating 100μm thick GaAs detector for α-particles, γ-rays and X-rays

    International Nuclear Information System (INIS)

    The 100μm thick, transmission, fully depleted GaAs Schottky barrier detector fabricated from LEC bulk GaAs crystals has been tested. The basic structure of the detector consists of a Cr/Au Schottky contact and an Au/Ge/Ni/Au alloyed ohmic contact. Pulse height spectra for α-particles resulting from irradiation with triple source 239Pu, 241Am, 244Cm, with energies 5.155, 5.486, 5.805MeV were acquired. The energy resolution for these energies was better than 10keV (1.8%). Using 241Am 5.486MeV α-particles a charge collection efficiency (CCE) of about 94% was obtained at 570V bias potential. The spectra of low-energy γ-rays 59.5keV and X-rays with average energy 16.2keV from 241Am source measured at room temperature are presented. An energy resolution of about 6.1keV (10.3%) FWHM at 59.5keV was obtained

  2. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    Energy Technology Data Exchange (ETDEWEB)

    Salman, S. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Folliot, H., E-mail: herve.folliot@insa-rennes.fr [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoeen, C.; Bertru, N. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Labbe, C. [CIMAP, CEA/UMR CNRS 6252/ENSICAEN/Universite de Caen Basse Normandie, 6, Boulevard Marechal Juin, 14050 Caen Cedex 4 (France); Letoublon, A.; Le Corre, A. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. Black-Right-Pointing-Pointer The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. Black-Right-Pointing-Pointer New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3{omega} method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3{omega} method in the 20-200 Degree-Sign C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  3. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P. D.; Chung, Choong-Heui

    2016-04-01

    We report the growth of vertical -oriented InAs x P1- x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1- x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

  4. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

    2016-12-01

    We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix. PMID:27094822

  5. High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

    Science.gov (United States)

    Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

    2014-06-11

    The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency. PMID:24841253

  6. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  7. AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+ and H+ ions bombardment.

    Science.gov (United States)

    Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Abidri, B.

    2012-06-01

    Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have been performed in order to investigate the InP(100) surface subjected to ions bombardment. The InP(100) surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV) indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  8. InP nanopore arrays for photoelectrochemical hydrogen generation

    Science.gov (United States)

    Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

    2016-02-01

    We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm-2). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

  9. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, InP based compound...

  10. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase II SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, high radiation resistance InP...

  11. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  12. Deep level defects in high temperature annealed InP

    Institute of Scientific and Technical Information of China (English)

    DONG; Zhiyuan; ZHAO; Youwen; ZENG; Yiping; DUAN; Manlong

    2004-01-01

    Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed iniron phosphide ambient,while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

  13. The effect of process conditions on the performance of epitaxial InP solar cells

    Science.gov (United States)

    Borrego, J. M.; Ghandi, S. K.

    1991-01-01

    Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.

  14. Long-Term INP Measurements within the BACCHUS project

    Science.gov (United States)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  15. Electron guns and collectors developed at INP for electron cooling devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharapa, A.N.; Shemyakin, A.V. [Institute of Nuclear Physics, Novosibirsk (Russian Federation)

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  16. Nanophotonic resonators for InP solar cells.

    Science.gov (United States)

    Goldman, Daniel A; Murray, Joseph; Munday, Jeremy N

    2016-05-16

    We describe high efficiency thin-film InP solar cells that utilize a periodic array of TiO2 nanocylinders. These nanophotonic resonators are found to reduce the solar-weighted average reflectivity of an InP solar cell to ~1.3%, outperforming the best double-layer antireflection coatings. The coupling between Mie scattering resonances and thin-film interference effects accurately describes the optical enhancement provided by the nanocylinders. The spectrally resolved reflectivity and J-V characteristics of the device under AM1.5G illumination are determined via coupled optical and electrical simulations, resulting in a predicted power conversion efficiency > 23%. We conclude that the nanostructured coating reduces reflection without negatively affecting the electronic properties of the InP solar cell by separating the nanostructured optical components from the active layer of the device. PMID:27409965

  17. Particle detectors based on semiconducting InP epitaxial layers

    OpenAIRE

    Yatskiv, R. (Roman); Grym, J.; Žďánský, K. (Karel)

    2011-01-01

    In this work, we present study of electrical properties and detection performance of two types of InP detector structures: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type ...

  18. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  19. Synthesis of colloidal InP nanocrystal quantum dots

    International Nuclear Information System (INIS)

    InP nano dots with the diameter of 4-10 nm were synthesized using sol-gel method. The nano dot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328 nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and Xray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. (authors)

  20. Investigation of helium implantation induced blistering in InP

    International Nuclear Information System (INIS)

    Four-inch InP wafers were implanted with 100 keV helium ions with a dose of 5x1016 cm-2 and subsequently annealed in air in the temperature range of 225-400deg. C in order to determine the blistering kinetics of these wafers. An Arrhenius plot of the blistering time as a function of reciprocal temperature revealed two different activation energies for the formation of surface blisters in InP. The activation energy was found to be 0.30 eV in the higher temperature regime of 300-400 deg. C and 0.74 eV in the lower temperature regime of 225-300 deg. C. The implantation induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 400-700 nm from the surface of InP. The damage band was found to be decorated with a large number of nanovoids having diameters between 2 and 5 nm. These nanovoids served as precursors for the formation of microcracks inside InP upon annealing, which led to the formation of surface blisters

  1. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  2. 1990's annual report of INPE's Plasma Associated Laboratory

    International Nuclear Information System (INIS)

    This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

  3. c-Myc inhibits TP53INP1 expression via promoter methylation in esophageal carcinoma

    International Nuclear Information System (INIS)

    Research highlights: → TP53INP1 expression is down-regulated in esophageal carcinoma and is associated with CGI-131 methylation. → Inhibition of CGI-131 methylation upregulates TP53INP1 expression in ESCC cell lines. → Ectopic expression of TP53INP1 inhibits growth of ESCC cells by inducing apoptosis and inhibiting cell cycle progression. → c-Myc binds to the promoter of TP53INP1 in vivo and vitro and recruits DNMT3A to TP53INP1 promoter for CGI-131 methylation. -- Abstract: Tumor protein p53-induced nuclear protein 1 (TP53INP1) is a well known stress-induced protein that plays a role in both cell cycle arrest and p53-mediated apoptosis. Loss of TP53INP1 expression has been reported in human melanoma, breast carcinoma, and gastric cancer. However, TP53INP1 expression and its regulatory mechanism in esophageal squamous cell carcinoma (ESCC) remain unclear. Our findings are in agreement with previous reports in that the expression of TP53INP1 was downregulated in 28% (10/36 cases) of ESCC lesions, and this was accompanied by significant promoter methylation. Overexpression of TP53INP1 induced G1 cell cycle arrest and increased apoptosis in ESCC cell lines (EC-1, EC-109, EC-9706). Furthermore, our study showed that the oncoprotein c-Myc bound to the core promoter of TP53INP1 and recruited DNA methyltransferase 3A to methylate the local promoter region, leading to the inhibition of TP53INP1 expression. Our findings revealed that TP53INP1 is a tumor suppressor in ESCC and that c-Myc-mediated DNA methylation-associated silencing of TP53INP1 contributed to the pathogenesis of human ESCC.

  4. Bulk undercooling

    Science.gov (United States)

    Kattamis, T. Z.

    1984-01-01

    Bulk undercooling methods and procedures will first be reviewed. Measurement of various parameters which are necessary to understand the solidification mechanism during and after recalescence will be discussed. During recalescence of levitated, glass-encased large droplets (5 to 8 mm diam) high speed temperature sensing devices coupled with a rapid response oscilloscope are now being used at MIT to measure local thermal behavior in hypoeutectic and eutectic binary Ni-Sn alloys. Dendrite tip velocities were measured by various investigators using thermal sensors or high speed cinematography. The confirmation of the validity of solidification models of bulk-undercooled melts is made difficult by the fineness of the final microstructure, the ultra-rapid evolution of the solidifying system which makes measurements very awkward, and the continuous modification of the microstructure which formed during recalescence because of precipitation, remelting and rapid coarsening.

  5. INFLUENCE OF RARE-EARTH ELEMENTS ON THE ELECTRICAL AND OPTICAL PROPERTIES OF INP BULK CRYSTALS

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Zavadil, Jiří; Pekárek, Ladislav

    -, - (2011), s. 58-65. ISSN 1335-9053. [Development of Materials Science in Research and Education . Závažná Poruba, 31.08.2009-04.09.2009] Institutional research plan: CEZ:AV0Z20670512 Keywords : Crystal growth * REEs elements * Electrical properties Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  6. Annealing effect on InP vertical porous arrays

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    InP vertical porous arrays were produced using electrochemical etching at room temperature.The as-etched InP samples were annealed in an ultra high vacuum camber.Cross-sectional analysis of the porous layer was conducted using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX).Annealing in vacuum was found to meliorate the structural quality of the porous layer.EDX results showed the composition change of the porous InP.By controlling the annealing process parameters,the content ratio of phosphorus (P) to indium (In) is tuneable.Raman property of the samples was also investigated at room temperature.Compared with the sample without annealing treatment,Raman spectrum from the annealed sample showed red-shifted LO and TO peaks together with sharpened LO peak and shortened TO peak.

  7. A single crystalline InP nanowire photodetector

    Science.gov (United States)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  8. Defining capabilities of Si and InP photonics.

    Energy Technology Data Exchange (ETDEWEB)

    Vawter, Gregory Allen

    2010-05-01

    Monolithic photonic integrated circuits (PICs) have a long history reaching back more than 40 years. During that time, and particularly in the past 15 years, the technology has matured and the application space grown to span sophisticated tunable diode lasers, 40 Gb/s electrical-to-optical signal converters with complex data formats, wavelength multiplexors and routers, as well as chemical/biological sensors. Most of this activity has centered in recent years on optical circuits built on either Silicon or InP substrates. This talk will review the three classes of PIC and highlight the unique strengths, and weaknesses, of PICs based on Silicon and InP substrates. Examples will be provided from recent R&D activity.

  9. Brittle-to-ductile transition temperature in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bayu-Aji, Leonardus B. [School of Education, Universitas Pelita Harapan, M. H. Thamrin Boulevard, 15811 Tangerang (Indonesia); Pirouz, P. [Department of Materials Science and Engineering, Case Western Reserve University, 44106 Cleveland, Ohio (United States)

    2010-05-15

    Deformation experiments were conducted on monocrystalline InP by 4-point bend tests as well as by conventional and depth-sensing indentation (DSI) tests. Temperature ranges where the material exhibited a brittle or a ductile behavior were investigated with particular focus on the transition from one deformation mode to the other. The 4-point bend tests show that InP exhibits a sharp brittle-to-ductile transition (BDT) temperature within 5 between 350 and 355 C at a strain rate of 2.9 x 10{sup -5} s{sup -1}. The indentation BDT (IBDT) temperature is found to be significantly lower at {proportional_to}250 C. The difference of nearly 100 C between the two techniques is attributed to the hydrostatic component of the indentation stress field that suppresses fracture and shifts the transition to a lower temperature. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Azimuthally polarized cathodoluminescence from InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Brenny, B. J. M.; Osorio, C. I.; Polman, A., E-mail: polman@amolf.nl [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Dam, D. van [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Gómez Rivas, J. [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); FOM Institute DIFFER, P.O. Box 6336, 5600 HH Eindhoven (Netherlands)

    2015-11-16

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  11. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  12. Study of discharge in quiescent plasma machine of the INPE

    International Nuclear Information System (INIS)

    Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

  13. Indium and phosphorus vacancies and antisites in InP

    OpenAIRE

    Seitsonen, A. P.; Virkkunen, R.; Puska, Martti J.; Nieminen, Risto M.

    1994-01-01

    We present an extensive study of the structure and energetics of monovacancies and antisites in InP. Using a first-principles approach, the different charge states of indium and phosphorus vacancies and antisites are examined. The lattice distortions around the defects are derived fully self-consistently with respect to both electronic and ionic degrees of freedom. Jahn-Teller relaxations, defect-induced one-electron energy levels, and ionization potentials in the band gap are discussed. From...

  14. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

    Directory of Open Access Journals (Sweden)

    Nikolett Sándor

    2015-10-01

    Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  15. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel;

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across the ...

  16. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  17. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel; Peucheret, Christophe; Oxenløwe, Leif Katsuo; Yvind, Kresten; Mørk, Jesper

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across the...

  18. Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

    Directory of Open Access Journals (Sweden)

    Jeyran eShahbazi

    2013-05-01

    Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

  19. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shisheng, E-mail: shishenglin@zju.edu.cn; Wang, Peng; Li, Xiaoqiang; Wu, Zhiqian; Xu, Zhijuan; Zhang, Shengjiao; Xu, Wenli [College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)

    2015-10-12

    We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.

  20. Band Structure Modifications in Deformed InP Quantum Wires

    Directory of Open Access Journals (Sweden)

    V.V. Kuryliuk

    2014-11-01

    Full Text Available The work describes the features of the band structure of deformed InP nanowires with different diameters. It is shown that the bending of quantum wires is capable of creating local minima in the conduction and valence bands which are separated from the surface of the cylindrical wire. This result opens up new possibilities for controlling both the lifetime of photoexcited carriers by keeping them at these minima and the magnitude of the photovoltage in solar energy conversion devices based on quantum wires. The work lies within a common goal aiming to develop new methods of functionalization of nanostructured surfaces using mechanical deformations.

  1. Particle detectors based on InP Schottky diodes

    International Nuclear Information System (INIS)

    A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed.

  2. Phosphorus vacancy in InP: A negative- U center

    OpenAIRE

    Alatalo, M.; Nieminen, Risto M.; Puska, Martti J.; Seitsonen, A. P.; Virkkunen, R.

    1993-01-01

    Using first-principles simulations, we identify the phosphorous vacancy in InP as a negative-U center. The deep levels associated with this defect are in the upper half of the band gap, and the charge state changes directly from positive to negative as the Fermi level is raised: the vacancy captures two electrons rather than one. We also obtain the relaxed structures and formation energies for the In and P vacancies as a function of both electron and atomic chemical potentials. Peer reviewed

  3. Radiation material science at the INP AS RUz

    International Nuclear Information System (INIS)

    Among the critical technologies, determining the national priority of USA and Russia the first place is taken by manufacturing new materials. It means synthesis and production of materials for electronics (micro- and nano-) and photonics, ceramics and nano-ceramics, composites, metals and alloys with particular properties, super-hard materials, bio-compatible materials, catalysts and membranes. Radiation solid state physics gave birth of many radiation technologies for obtaining unique new or modified materials. In the table lists the experimental results recently obtained at the INP AS RUz. The studies are supported by grants of STCU and Uzbekistan Center of Science and Technology

  4. Surface photovoltage studies of n-type and p-type InP

    Science.gov (United States)

    Thurgate, S. M.; Blight, K.; Laceusta, T. D.

    1994-05-01

    Surface photovoltage spectroscopy (SPV) was used to study the initial stages of oxidation of single crystal InP(110) in an attempt to understand the nature and origin of the surface states that develop. Distinct surface states were seen to develop on n-type as the surface was exposed to oxygen. A surface state, associated with cleavage damage, was also observed on p-type. A detailed fit to the experimental data was made by using a model of the dependence of surface charge on photon energy. This was used to unfold the position and intensity of the states. States trailing into the band gap from the bulk bands were seen on both n- and p-types. The analysis also indicated that pairs of isolated states, a donor and an acceptor state, were produced. On p-type, these were present on the clean, cleaved surface while they developed with oxygen exposure on n-type. These states are consistent with the point defect states proposed by the unified defect model. The time response of the SPV signal was also recorded for these surfaces. They were analysed by careful fitting to a model describing the charging and discharging characteristics. This revealed that the midgap state on n-type had a fast and a slow component.

  5. Optical trends in InP polytypic superlattices

    Science.gov (United States)

    Sipahi, Guilherme; de Campos, Tiago; de Faria Junior, Paulo Eduardo

    2015-03-01

    Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well reported in the literature, a deeper theoretical understanding of how crystal phase mixing and quantum confinement change the output linear light polarization is still needed. Here, we theoretically investigate the effects of these polytypic homojunctions on the interband absorption of an InP superlattice. Using a single 8x8 k.p Hamiltonian that describes both crystal phases together with the effects of quantum and optical confinement we where able to explain the recent optical exeperimental results carried on polytypic InP. In summary, we have shown how the interplay of crystal phase mixing and quantum confinement can be used for light polarization engineering in polytypic homojunctions. FAPESP (No. 2011/19333-4, No. 2012/05618-0 and No. 2013/23393-8) and CNPq (No. 138457/2011-5, No. 246549/2012-2 and No. 149904/2013-4)

  6. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  7. Radiation damage in InP single crystals and solar cells

    International Nuclear Information System (INIS)

    This paper shows that InP solar cell is more radiation resistant than Si and GaAs solar cells. 60Co γ-ray irradiation damage in InP solar cells was examined. Changes in minority carrier diffusion length and carrier concentration in irradiated InP single crystals were also investigated by electron beam induced current and capacitance-voltage methods for solar cells. A high carrier concentration p-InP substrate has lower concentration damage. Thus, an InP solar cell with a higher carrier concentration substrate has superior radiation resistance. Experimental results for radiation damage in InP solar cells were in satisfactory agreement with theoretical values, calculated from changes in minority carrier diffusion length and carrier concentration due to irradiation. Numerical analysis suggests that an InP solar cell with a higher carrier concentration substrate and a shallower junction should be relatively more radiation resistant. Annealing behavior for radiation damage in InP was also examined

  8. Growth of polycrystalline InP thin films by the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are shown. X-ray diffraction shows that the stoichiometric InP films were face-centered cubic with preferred orientation of the crystallites over the (111) plane and mean grain size of about 60 nm. We also discuss the consequences of adverse growth conditions as bad vacuum and high substrate temperature on the film stoichiometry

  9. Growth of polycrystalline InP thin films by the pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Iribarren, A. [Instituto de Materiales y Reactivos, Universidad de La Habana, Zapata y G, Vedado, Plaza, Havana 10400 (Cuba)]. E-mail: augusto@fisica.uh.cu; Castro-Rodriguez, R. [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida Yucatan (Mexico); Ponce-Cabrera, L. [CICATA-IPN, Altamira, Km. 14.5 Carretera Tampico-Puerto Industrial, Altamira 89600, Tamps. (Mexico); Pena, J.L. [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida Yucatan (Mexico)

    2006-07-03

    The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are shown. X-ray diffraction shows that the stoichiometric InP films were face-centered cubic with preferred orientation of the crystallites over the (111) plane and mean grain size of about 60 nm. We also discuss the consequences of adverse growth conditions as bad vacuum and high substrate temperature on the film stoichiometry.

  10. Radiation resistance of InP solar cells under light illumination

    International Nuclear Information System (INIS)

    The demonstration of superior radiation resistance of InP solar cells during solar cell operation is reported. High-energy electron irradiation effects on InP n+-p junction solar cells under light illumination are compared with those under dark conditions. The InP solar cells under light illumination are found to have less degradation in solar cell properties. This is explained by minority-carrier injection enhanced annealing of radiation-induced defects, analyzed using deep level transient spectroscopy, in the p-InP layer

  11. Scanning photoluminescence technique: application to defect recovery of ion implanted InP

    International Nuclear Information System (INIS)

    The scanning photoluminescence technique at room temperature was applied to characterize the quality of ion-implanted indium phosphide as well as to investigate the defect recovery as a function of the annealing temperature. Doses ranging from 1010 to 1014 ions cm-2 were implanted with either neon or magnesium ions. The intensity of the photoluminescence response was found to be related to the ion dose. Two different substrates were used: an iron-doped semi-insulating one and an undoped one. The results were similar. Nevertheless, the sensitivity was higher for the undoped substrate. After thermal anneals ranging from 200 up to 800oC the average PL intensity was again recorded and was found to increase with the progressive recovery of the defects. After an anneal at 750oC the PL response was comparable to the signal obtained in the case of an annealed reference. The contribution of a doping impurity in a semi-insulating substrate was not clearly evidenced, the PL signal being dominated by the remaining non-radiative centres. (Author)

  12. Particle detectors based on semiconducting InP epitaxial layers

    Science.gov (United States)

    Yatskiv, R.; Grym, J.; Zdansky, K.

    2011-01-01

    A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature.

  13. Particle detectors based on semiconducting InP epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Yatskiv, R; Grym, J; Zdansky, K, E-mail: yatskiv@ufe.cz [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic)

    2011-01-15

    A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 10{sup 14} cm{sup -3} grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from {sup 241}Am source at room temperature.

  14. Particle detectors based on semiconducting InP epitaxial layers

    International Nuclear Information System (INIS)

    A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature.

  15. Study of discharge in the quiescent plasma machine of INPE

    International Nuclear Information System (INIS)

    Measurements of main plasma parameters produced in the quiescent plasma machine of INPE for several pressure and discharge potential values, and current of 500 m A are presented. The density varies form 108 cm-3 to 1010 cm-3 and the average electron energy is between 1 eV and 10 eV. The electron energy distribution is non-Maxwellian corresponding to one population of high energy primary electrons and two populations of electron with temperature below 10 eV. The plasma potential varies from 1 V to 3 V in relation to the anode, but decrease fastly to negative values when the pressures becomes near to 10-3 Pa. Qualitative interpretations are given and a simple model for plasma density is compared with experimental values. Conditions of cathode operation are also investigated. (M.C.K.)

  16. Preliminary design of the INPE's Solar Vector Magnetograph

    CERN Document Server

    Vieira, L E A; Lago, A Dal; Wrasse, C; Echer, E; Guarnieri, F L; Cardoso, F Reis; Guerrero, G; Costa, J Rezende; Palacios, J; Balmaceda, L; Alves, L Ribeiro; da Silva, L; Costa, L L; Sampaio, M; Soares, M C Rabello; Barbosa, M; Domingues, M; Rigozo, N; Mendes, O; Jauer, P; Dallaqua, R; Branco, R H; Stekel, T; Gonzalez, W; Kabata, W

    2016-01-01

    We describe the preliminary design of a magnetograph and visible-light imager instrument to study the solar dynamo processes through observations of the solar surface magnetic field distribution. The instrument will provide measurements of the vector magnetic field and of the line-of-sight velocity in the solar photosphere. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in reaching the scientific goals of The Atmospheric and Space Science Coordination (CEA) at the Brazilian National Institute for Space Research (INPE). In particular, the CEA's space weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is acquiring progressively the know-how to build state-of-art sol...

  17. Experimental studies on the surface confined quiescent plasma at INPE

    International Nuclear Information System (INIS)

    Quiescent plasma machines are being used in several experiments at the Associated Plasma Laboratory in INPE. The research activities comprises particle simulation studies on ion acoustic double Layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author)

  18. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  19. INPE LANDSAT-D thematic mapper computer compatible tape format specification

    Science.gov (United States)

    Parada, N. D. J. (Principal Investigator); Desouza, R. C. M.

    1982-01-01

    The format of the computer compatible tapes (CCT) which contain Thematic Mapper (TM) imagery data acquired from the LANDSAT D and D Prime satellites by the INSTITUTO DE PERSQUISAS ESPACIALS (CNPq-INPE/BRAZIL) is defined.

  20. Extended Wavelength InP Based Avalanche Diodes for MWIR Response Project

    Data.gov (United States)

    National Aeronautics and Space Administration — For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates...

  1. Distinction between surface and bulk states in surface-photovoltage spectroscopy

    Science.gov (United States)

    Leibovitch, M.; Kronik, L.; Fefer, E.; Shapira, Yoram

    1994-07-01

    The effect of localized electron states on the photovoltage at a free semiconductor surface is analyzed. The analysis shows that surface-photovoltage spectroscopy (SPS) is inherently more sensitive to surface states than to bulk states. Moreover, a fundamental difference between the effect of surface and bulk states on the surface photovoltage (SPV) is shown. The analysis demonstrates that the same illumination-induced variation of the population at a surface and a bulk state may result in a significantly different dependence of the SPV on the illumination intensity. Under certain conditions, this difference makes it possible to distinguish between surface and bulk states by means of SPS. Analytical expressions for these relations are obtained under the depletion approximation, and are compared with the results of a numerical simulation. Experimental results obtained from InP samples demonstrate an application of the theory to practical distinction between surface and bulk states.

  2. Room temperature particle detectors based on indium phosphide

    Energy Technology Data Exchange (ETDEWEB)

    Yatskiv, R., E-mail: yatskiv@ufe.c [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Grym, J.; Zdansky, K. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Pekarek, L. [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Praha 8 (Czech Republic); Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8 (Czech Republic)

    2010-01-01

    A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from {sup 241}Am source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers.

  3. Room temperature particle detectors based on indium phosphide

    Science.gov (United States)

    Yatskiv, R.; Grym, J.; Zdansky, K.; Pekarek, L.

    2010-01-01

    A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers.

  4. Room temperature particle detectors based on indium phosphide

    International Nuclear Information System (INIS)

    A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers.

  5. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  6. XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs2 thin films on InP substrates

    Directory of Open Access Journals (Sweden)

    Oomae H.

    2014-07-01

    Full Text Available Mn-doped ZnSnAs2 (ZnSnAs2:Mn thin films with 5.0 and 6.5% Mn composition were epitaxially grown by molecular beam epitaxy on InP (001 substrates. These films had a Curie temperature of 334 K, corresponding to room-temperature ferromagnetism. The local structures around Mn atoms in ZnSnAs2:Mn were studied by analysis of the X-ray absorption fine-structure spectra. It was found that the Mn atoms substitute into Zn or Sn cation sites, and the Mn‒As bond length is 2.50 Å, which is slightly smaller than the value of 2.53 Å in a sphalerite (zinc-blende ZnSnAs2 bulk crystal. The Mn‒As bond length in ZnSnAs2:Mn is consistent with the value obtained from GaMnAs, and has a smaller value than that obtained from the zinc-blend MnAs thin films grown on a InP substrate.

  7. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  8. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles

    International Nuclear Information System (INIS)

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire. (paper)

  9. Synthesis, formation mechanism and electric property of hollow InP nanospheres

    International Nuclear Information System (INIS)

    Hollow InP nanospheres with the diameters of 700-800 nm and a shell thickness of about 100 nm have been synthesized via a solvothermal reaction of InCl3 with NH4F, red phosphorus and KBH4 in ethylenediamine-ethylene glycol solution at 220 C for 24 h and subsequent HCl treatment. The hollow nanospheres are constructed from nanoparticles with a cubic structure and the sizes of 35 to 40 nm. The hollow InP nanospheres were formed by the cooperative action of H2 bubble templates and InOHF2 limitation. Electric property of the as-synthesized hollow InP nanospheres has been investigated, and the hollow nanospheres could serve as ideal functional components for photoelectronic devices. (orig.)

  10. Electron irradiation damage in N+-P InP solar cells

    International Nuclear Information System (INIS)

    Electron (1 MeV) irradiation damage in shallow n+-p InP solar cells has been studied. An n+-p junction was formed by thermal diffusion of sulphur into a p-type substrate. Minority carrier diffusion length and carrier concentration studies were carried out for defects induced by electron irradiation in InP solar cells. It has been found that the InP solar cell has a higher resistance to radiation degradation than a GaAs solar cell. A cell using a high carrier concentration (order of 1018 cm-3) substrate is more radiation resistant than that with a low carrier concentration (1015 about 1016 cm-3) substrate. Electron irradiation damage dynamics during annealing have also been studied. Damage recovery starts from as low as 700C

  11. Design and fabrication of InP micro-ring resonant detectors

    Institute of Scientific and Technical Information of China (English)

    辛海明; 黄永清; 陈海波; 黄辉; 任晓敏; 周星光

    2009-01-01

    The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.

  12. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    Science.gov (United States)

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-01

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. PMID:21747509

  13. A symbolically defined InP double heterojunction bipolar transistor large-signal model

    Institute of Scientific and Technical Information of China (English)

    Cao Yuxiong; Jin Zhi; Ge Ji; Su Yongbo; Liu Xinyu

    2009-01-01

    A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD)in Agilent ADS. The model accounts for most physical phenomena incluaing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.

  14. Modeling on the size dependent properties of InP quantum dots: a hybrid functional study

    International Nuclear Information System (INIS)

    Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2–4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values. (paper)

  15. Self-assembly structure formation on patterned InP surfaces

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Self-assembly of polystyrene spheres guided by patterned n-type InP substrates has been investigated. InP surfaces were patterned using a variety of methods including wet chemical etching,sputter coating,thermal evaporation,and photo lithography. The self-assembly of polystyrene spheres depended on the appearance of patterns and was affected by the deposition techniques (sputter coating and thermal evaporation) of Au micro-squares. SEM and AFM were used to characterize the surface morphologies.

  16. Effect of substrate orientation on the catalyst-free growth of InP nanowires

    International Nuclear Information System (INIS)

    We report the fabrication of self-catalysed InP nanowires on (111)B, (111)A, (110), and (001) InP substrates. Indium droplets, deposited in situ using metalorganic vapour phase epitaxy, are used as seeds for nanowire growth. The preferential nanowire growth direction is always on (111)B (111)A, and (110) oriented substrates. On (111)A substrates some initial growth in the [111]A direction is observed before kinking into one of the available B directions. The nanowires are optically active at room temperature. On (001) substrates no nanowire growth off the substrate is observed. However, growth still takes place in the two possible equivalent B azimuthal directions

  17. Tensile-strained GaAsN quantum dots on InP

    OpenAIRE

    Pohjola, P.; Hakkarainen, T.; Koskenvaara, H.; Sopanen, Markku; Lipsanen, Harri; Sainio, J.

    2007-01-01

    Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the...

  18. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  19. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...... gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology....

  20. Beyond G-band : a 235 GHz InP MMIC amplifier

    Science.gov (United States)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  1. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

    International Nuclear Information System (INIS)

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp)3). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

  2. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp){sub 3})

    Energy Technology Data Exchange (ETDEWEB)

    Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y

    2003-06-30

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp){sub 3}). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP.

  3. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas; Kraemer, Tomas; Weimann, Nils; Schnieder, Frank; Krozer, Viktor; Heinrich, Wolfgang

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a...

  4. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  5. Status and future directions of InP solar cell research

    Science.gov (United States)

    Jain, R. K.; Weinberg, I.

    1992-01-01

    An overview of the current status and future directions of InP space solar cell research is provided. The scope of the paper does not allow us to discuss other recent major developments in InP cell modeling, contacts, and characterization, or developments in other solar cell materials. Solar cells made from InP and related materials are not expected to be used in the near future for terrestrial applications, but significant Air-Mass1.5 (AM1.5) cell efficiencies are given for comparison. This paper deals with the developments in single-junction cells, multijunction tandem cells, and space flight testing, including radiation effects. Concentrator InP solar cells are also discussed, since they offer the possibility of simultaneous thermal and current injection annealing. These cells also promise cost effectiveness and the concentrator elements may provide cells with extra protection from space radiation. The concluding section addresses the steps to be taken in the future and provides guidelines for further research and development.

  6. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.; Schwertberger, R.; Kaiser, W.; Forchel, A.; Calligaro, M.; Resneau, P.; Parillaud, O.; Bansropun, S.; Krakowski, M.; Alizon, R.; Hadass, D.; Bilenca, A.; Dery, H.; Mikhelashvili, V.; Eisenstein, G.; Gioannini, M.; Montrosset, I.; Berg, Tommy Winther; Poel, Mike van der; Mørk, Jesper; Tromborg, Bjarne

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

  7. Embossed Bragg Gratings Based on Organically Modified Silane Waveguides in InP.

    Science.gov (United States)

    Liu, J; Lam, Y L; Chan, Y C; Zhou, Y; Ooi, B S; Tan, G; Yao, J

    2000-09-20

    Considering the large variety of applications for optical glass waveguide gratings, the effective production method of embossing for micropatterning, and the unique advantages of InP-based materials, we expect that hybridization of embossed optical glass waveguide gratings and InP substrates will inevitably lead to new applications in integrated optics. We present our preliminary results of research toward the development of solgel-derived glass waveguide gratings made by embossing on InP. Theoretically, the dependence of the stop-band FWHM and transmission contrast of the grating filter on the grating length, and the relationship between the Bragg grating's reflective wavelength and the dopant concentration in the solgel waveguide, are obtained. Experimentally, using organically modified silane, we solve the problem of mismatching of SiO(2) and InP, and successfully fabricate an embossed glass grating with a second-order Bragg reflection wavelength of 1580 nm and a FWHM of 0.7 nm fabricated upon a solgel waveguide on an InP substrate. PMID:18350088

  8. X-ray diffraction analysis of multilayer porous InP(001) structure

    Czech Academy of Sciences Publication Activity Database

    Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

    2010-01-01

    Roč. 55, č. 2 (2010), s. 182-190. ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

  9. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  10. Quantum beats in photoluminescence of InP quantum dots in electric field

    Energy Technology Data Exchange (ETDEWEB)

    Davydov, V.; Ren, H.W.; Sugisaki, M. [ERATO, JST, Tsukuba (Japan). Single Quantum Dot Project; Fedorov, A.V. [Vavilov State Optical Inst., St. Petersburg (Russian Federation); Ignatiev, I.V.; Kozin, I.E. [ERATO, JST, Tsukuba (Japan). Single Quantum Dot Project; Sankt-Peterburgskij Univ. (Russian Federation). Research Inst. of Physics; Sugou, S. [ERATO, JST, Tsukuba (Japan). Single Quantum Dot Project; NEC Corp., Tsukuba (Japan). Opto-Electronics Research Labs.; Masumoto, Y. [ERATO, JST, Tsukuba (Japan). Single Quantum Dot Project; Tsukuba Univ., Sakura, Ibaraki (Japan). Inst. of Physics

    2001-03-08

    The photoluminescence (PL) kinetics of heterostructures with InP self-assembled quantum dots are studied under quasi-resonant pulse excitation in the presence of an external electric field. An oscillatory behavior of the PL kinetics is shown to arise due to quantum beats of the radiative states. A model of the coherent excitation of nonresonant PL is proposed. (orig.)

  11. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    OpenAIRE

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-01-01

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-w...

  12. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Directory of Open Access Journals (Sweden)

    R. E. Mamouri

    2015-12-01

    Full Text Available We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN and ice nucleating particle (INP number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN and with radius > 250 nm (APC250, reservoir of favorable INP, as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization can be retrieved from lidar-derived aerosol extinction coefficients (AEC with relative uncertainties of a factor of around 2 (APC50, and of about 25–50 % (APC250, ASC. Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke. We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine. Our study is based on multiyear Aerosol Robotic Network (AERONET photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN and published INP parameterization schemes (with APC250 and ASC as input we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  13. Voltammetric Study and Determination of Phenylephrine Hydrochloride at INP-Nafion-Modified CPE Sensor Employing Differential Pulse Voltammetry

    Directory of Open Access Journals (Sweden)

    Zeinab Pourghobadi

    2014-03-01

    Full Text Available In this study, describes the voltammetric oxidation and determination of phenylephrine (PHE hydrochloride at a new chemically modified electrode. Iron nanoparticle (INPs was dispersed in Nafion solution to obtain a INP-Nafion-modified CPE for the voltammetric analysis of PHE .The electrochemical behaviour of PHE on INP-Nafion-modified CPE was studied, using cyclic voltammetry as a diagnostic technique. The effects of amount of INPs-Nafion dispersion, pH, and scan rate on the response of modified electrode for the oxidation of PHE were investigated. Using differential pulse voltammetry (DPV, the modified electrode indicated a dynamic linear range for quantitative determination of PHE in the range of 5 μM−130 μM, and the detection limit was estimated to be 0.76 μM. The method was developed for the determination of PHE in pharmaceutical samples with satisfactory results.

  14. Effect of nuclear spins on the electron spin dynamics in negatively charged InP quantum dots

    OpenAIRE

    Ignatiev, I. V.; Verbin, S. Yu.; Gerlovin, I. Ya.; Maruyama, W.; Pal, B.; Masumoto, Y.

    2005-01-01

    Kinetics of polarized photoluminescence of the negatively charged InP quantum dots in weak magnetic field is studied experimentally. Effect of both the nuclear spin fluctuations and the dynamical nuclear polarization on the electron spin orientation is observed.

  15. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Science.gov (United States)

    Mamouri, Rodanthi-Elisavet; Ansmann, Albert

    2016-05-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols), n100, dry (particles with dry radius > 100 nm, reservoir of desert dust CCN), and of n250, dry (particles with dry radius > 250 nm, reservoir of favorable INP), as well as profiles of the particle surface area concentration sdry (used in INP parameterizations) can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5-2 in the case of n50, dry and n100, dry and of about 25-50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine) and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input) and available INP parameterization schemes (with n250, dry and sdry as input) we finally compute

  16. Future coordinated researches by ANL (USA), INP AS RUz and INP NNC RKaz on the nuclear reactions and astrophysics

    International Nuclear Information System (INIS)

    should be peripheral and one-step mechanism of the particle transfer should dominate. In addition, the first excited states of outgoing 12C or 16O particles lie rather high (4.44 and 6.05 MeV respectively), so the interference of their excited states with the low lying states of final nuclei B will not take place. The reactions A(3He,d)B (ε3He→d+p=5.49 MeV) and A(t,d)B (ε3H→d+n=6.257 MeV) can be used also, but the energy of proton separation is somewhat more. The alpha transfer reactions A(6Li,d)B, A(7Li,t)B and A(7Be,3He)B is supposed to be used for obtaining ANCs B→ A+α because the projectiles are nuclei with weakly bound α - cluster. The possibility of implementation such experiments on ATLAS (ANL, USA) and U-150M (INP, Kazakhstan) accelerators is discussed

  17. On the usage of classical nucleation theory in quantification of the impact of bacterial INP on weather and climate

    Science.gov (United States)

    Sahyoun, Maher; Wex, Heike; Gosewinkel, Ulrich; Šantl-Temkiv, Tina; Nielsen, Niels W.; Finster, Kai; Sørensen, Jens H.; Stratmann, Frank; Korsholm, Ulrik S.

    2016-08-01

    Bacterial ice-nucleating particles (INP) are present in the atmosphere and efficient in heterogeneous ice-nucleation at temperatures up to -2 °C in mixed-phase clouds. However, due to their low emission rates, their climatic impact was considered insignificant in previous modeling studies. In view of uncertainties about the actual atmospheric emission rates and concentrations of bacterial INP, it is important to re-investigate the threshold fraction of cloud droplets containing bacterial INP for a pronounced effect on ice-nucleation, by using a suitable parameterization that describes the ice-nucleation process by bacterial INP properly. Therefore, we compared two heterogeneous ice-nucleation rate parameterizations, denoted CH08 and HOO10 herein, both of which are based on classical-nucleation-theory and measurements, and use similar equations, but different parameters, to an empirical parameterization, denoted HAR13 herein, which considers implicitly the number of bacterial INP. All parameterizations were used to calculate the ice-nucleation probability offline. HAR13 and HOO10 were implemented and tested in a one-dimensional version of a weather-forecast-model in two meteorological cases. Ice-nucleation-probabilities based on HAR13 and CH08 were similar, in spite of their different derivation, and were higher than those based on HOO10. This study shows the importance of the method of parameterization and of the input variable, number of bacterial INP, for accurately assessing their role in meteorological and climatic processes.

  18. Downstream etching of GaAs and InP using molecular chlorine and chlorine radicals

    International Nuclear Information System (INIS)

    The temperature dependent etching of GaAs and InP using both molecular and remote plasma activated Cl2 and HCl is examined. GaAs etches nearly three times faster in a remotely generated Cl2 plasma than in a molecular Cl2 environment with plasma off. The temperature dependance from room temperature to 250 degrees C is similar for both cases. Significant etch rates of GaAs are observed for HCl remotely generated plasma even at room temperature (∼1000 Angstrom/min). Although the etch rate for InP below 150 degrees C is quite low for either Cl2 or HCl, the relatively fast, temperature independent etch rate above this temperature is comparable to that of GaAs. The results are compared to RIE and a thermodynamic model

  19. X-ray diffraction analysis of multilayer porous InP(001) structure

    International Nuclear Information System (INIS)

    Multilayer structures composed of four porous bilayers have been studied by high-resolution X-ray diffraction using synchrotron radiation, and the photoluminescence of these structures has been investigated at 4 K. The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data.

  20. Unusual nanostructures of “lattice matched” InP on AlInAs

    International Nuclear Information System (INIS)

    We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology

  1. Some features of solar cells with vertical p-n junctions in InP

    International Nuclear Information System (INIS)

    Numeral calculation performed and graphic distribution were given of not equilibrium charge carriers along depth in p- and n-regions of p-n junction in InP at different significance of surface recombination velocity of not equilibrium carriers and at maximum significance of absorption recombination coefficient . At this case is considered lighted surface of diode by radiation falling parallel plane of p-n junction. The optimum size of individual diodes in solar cells battery were defined for achievement of maximum separate coefficient of not equilibrium charge carriers of p-n junctions. The region of spectral sensibilities for solar cells battery with the vertical p-n junctions on InP are estimated and discussed some way of it expanding

  2. Evolution of InP surfaces under low fluence pulsed UV irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Musaev, O.R. [Department of Physics, University of Missouri Kansas City, Rockhill Road 5100, Kansas City, MO 64110 (United States)], E-mail: musaevo@umkc.edu; Kwon, O.S.; Wrobel, J.M.; Zhu, D.-M.; Kruger, M.B. [Department of Physics, University of Missouri Kansas City, Rockhill Road 5100, Kansas City, MO 64110 (United States)

    2008-07-15

    An InP wafer was irradiated in air by a series of UV pulses from a nitrogen laser with fluences of 120 mJ/cm{sup 2} and 80 mJ/cm{sup 2}. These fluences are below the single-pulse ablation threshold of InP. Over the studied region the distribution of the radiation intensity was uniform. The number of pulses varied from 50 to 6000. The evolution of the surface morphology and structure was characterized by atomic force microscopy, optical microscopy and Raman spectroscopy. The relationship between mound size and the number of pulses starts out following a power law, but saturates for a sufficiently high number of pulses. The crossover point is a function of fluence. A similar relation exists for the surface roughness. Raman spectroscopic investigations showed little change in local crystalline structure of the processed surface layer.

  3. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  4. Effects of Be doping on InP nanowire growth mechanisms

    International Nuclear Information System (INIS)

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below ∼1018 cm−3, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  5. Chemically prepared well-ordered InP(0 0 1) surfaces

    Science.gov (United States)

    Tereshchenko, O. E.; Paget, D.; Chiaradia, P.; Placidi, E.; Bonnet, J. E.; Wiame, F.; Taleb-Ibrahimi, A.

    2006-08-01

    In the present work HCl-isopropanol treated and vacuum annealed InP(0 0 1) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InCl x and phosphorus. Annealing at 230 °C induces desorption of InCl x overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 × 4) surface. The structural properties of chemically prepared InP(0 0 1) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers.

  6. Effect of substrate orientation on the catalyst-free growth of InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mattila, M [Micro and Nanotechnology Laboratory, Helsinki University of Technology, Micronova, PO Box 3500, FIN-02015 TKK (Finland); Hakkarainen, T [Micro and Nanotechnology Laboratory, Helsinki University of Technology, Micronova, PO Box 3500, FIN-02015 TKK (Finland); Jiang, H [VTT Biotechnology, PO Box 1000, FIN-02044 VTT (Finland); Kauppinen, E I [VTT Biotechnology, PO Box 1000, FIN-02044 VTT (Finland); Lipsanen, H [Micro and Nanotechnology Laboratory, Helsinki University of Technology, Micronova, PO Box 3500, FIN-02015 TKK (Finland)

    2007-04-18

    We report the fabrication of self-catalysed InP nanowires on (111)B, (111)A, (110), and (001) InP substrates. Indium droplets, deposited in situ using metalorganic vapour phase epitaxy, are used as seeds for nanowire growth. The preferential nanowire growth direction is always <111> on (111)B (111)A, and (110) oriented substrates. On (111)A substrates some initial growth in the [111]A direction is observed before kinking into one of the available <111>B directions. The nanowires are optically active at room temperature. On (001) substrates no nanowire growth off the substrate is observed. However, growth still takes place in the two possible equivalent <111>B azimuthal directions.

  7. Heat treatment effect on p type Zn doped InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dhouib, A.; Maloumbi, B.; Martinez, C. and others

    1987-10-01

    During the process of elaboration of n/sup +//p InP photodiodes for solar energy conversion, we have observed that the 700 C sulfur diffusion into Zn doped InP substrates strongly modifies the electrical and photoelectrical properties of these substrates. A simple annealing at the same temperature produces nearly equivalent effects. The most relevant modification is a strong, depth independent hole density increase (more than one order of magnitude). A degradation of the photoelectrical parameters: diffusion length L and carrier lifetime tau has also been detected near the surface of the heat treated substrates. The deep traps measured from deep level transient spectroscopy (DLTS) are not typical of the heat treatment.

  8. Relaxation processes under microindentation of InP crystals subjected to scratching deformation

    International Nuclear Information System (INIS)

    The elastic strain relaxation was estimated by the use of the method of acoustic emission signal registration under microindentation. The coefficient K for the estimation of relaxation degree under unloading was introduced. The preliminary strain degree of InP single crystals and accordingly the internal stresses were varied by the scratching method as well as by the testing temperature (293-723 K) and storage of predeformed crystals at room temperature. It was shown that the relaxation processes are determined by the stress defect structure state and are the predeformation temperature function. These processes are tightly related to the internal strain stress, characterizing the start state of InP single crystals. (authors)

  9. Formation of quantum wires and dots on InP(001) by As/P exchange

    International Nuclear Information System (INIS)

    We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

  10. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    OpenAIRE

    Piksová Kateřina; Grym Jan; Procházková Olga; Yatskiv Roman

    2011-01-01

    Abstract Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. More...

  11. X-ray photoemission investigation of excimer laser induced etching of InP

    International Nuclear Information System (INIS)

    ArF excimer laser induced etching of InP in various etch gases (HBr, HCl, Cl2) is discussed with regard to its spatial resolution capability. X-ray photoemission spectra and large-area etch rate measurements published before lead to fundamental understanding and interpretation of the characteristics of etched test structures. HBr and HCl require gas phase photodissociation. Cl2, in contrast, has the advantage to react spontaneously

  12. Synthesis and characterization of InP and InN colloidal quantum dots.

    Energy Technology Data Exchange (ETDEWEB)

    Boyle, Timothy J.; Osinski, Marek (University of New Mexico, Albuquerque, New Mexico); Greenberg, Melisa (University of New Mexico, Albuquerque, New Mexico); Bunge, Scott D.; Chen, Weiliang (University of New Mexico, Albuquerque, New Mexico); Smolyakov, G. A. (University of New Mexico, Albuquerque, New Mexico); Pulford, B. N. (University of New Mexico, Albuquerque, New Mexico); Jiang, Ying-Bing (University of New Mexico, Albuquerque, New Mexico)

    2005-04-01

    InP quantum dots (QDs) with zinc blende structure and InN QDs with hexagonal structure were synthesized from appropriate organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The QDs were characterized by TEM, the associated energy dispersive spectroscopy (EDS), electron diffraction, and steady state UV-VIS optical absorption and photoluminescence spectroscopy. To our best knowledge, this paper reports synthesis of InN colloidal quantum dots for the first time.

  13. High-efficiency ultrasmall polarization converter in InP membrane.

    Science.gov (United States)

    Pello, Josselin; van der Tol, Jos; Keyvaninia, Shahram; van Veldhoven, René; Ambrosius, Huub; Roelkens, Gunther; Smit, Meint

    2012-09-01

    An ultrasmall (polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.2  dB at a wavelength of 1.53 μm. Furthermore, our design is found to be broadband and tolerant to dimension variations. PMID:22940999

  14. Design and fabrication of an InP arrayed waveguide grating for monolithic PICs

    Institute of Scientific and Technical Information of China (English)

    Pan Pan; An Junming; Wang Liangliang; Wu Yuanda; Wang Yue; Hu Xiongwei

    2012-01-01

    A 10-channel,200 GHz channel spacing InP arrayed waveguide grating was designed,and the deep ridge waveguide design makes it polarization independent.Under the technologies of molecular beam epitaxy,lithography,and induced coupler plasma etching,the chip was fabricated in our laboratory.The test results show that the insertion loss is about 8 dB,and the crosstalk is less than-17 dB.

  15. Phosphorous vacancy nearest-neighbor hopping involved instabilities in InP MIS capacitors

    International Nuclear Information System (INIS)

    The drain current of an InP MISFET is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomena. In this study, the authors have employed variable-temperature bias-stress measurements of InP MIS capacitors in order to determine the dominant DCD mechanisms from an analysis of the activation energy of the flatband shift. There are two advantages inherent in bias-stress measurements of MIS capacitors compared to DCD measurements of InP MISFETs. First, fabrication of the MIS capacitor requires very few processing steps compared to that of a MISFET so that the interface chemistry can be precisely controlled and the electrical instabilities may be correlated to the interface chemistry. Two distinct activation energies at 45meV and 1.2eV were obtained from variable-temperature bias-stress measurements over a temperature range of 100 - 350K. The 45meV activation energy dominates the flatband shift at low temperatures and is consistent with thermally activated tunneling of electrons from the InP conduction band into a discrete trap in the native oxide. The 1.2eV activation energy is that predicted for phosphorus vacancy nearest-neighbor hopping (PVNNH) in which the channel electrons are captured by shallow acceptors which are created by the hopping of an In atom into a phosphorus vacancy. The estimated fraction of the flatband shift in these particular samples at room temperature due to PVNNH is approximately 20%

  16. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K‐Δs...... Periodicals, Inc. Int J RF and Microwave CAE 23: 662–674, 2013....

  17. Schottky Barriers Based on Nanoporous InP with Gold Nanoparticles.

    Science.gov (United States)

    Barlas, Tetyana; Dmitruk, Mykola; Kotova, Nataliya; Mamykin, Sergii

    2016-12-01

    Schottky barrier structures based on nanoporous InP with inclusion of Au nanoparticles and evaporated semitransparent Au film have been made. The spectra of short-circuit photocurrent in the visible range and current-voltage characteristics have been measured. Prepared structures are characterized by increased photocurrent due to the microrelief interface and surface plasmon excitation in gold nanoparticles as well as increased surface recombination especially in the short wavelength region. PMID:27075341

  18. Observation of edge-facets in InP crystals grown by LEC method

    Science.gov (United States)

    Shibata, Masatomo; Sasaki, Yukio; Inada, Tomoki; Kuma, Shoji

    1990-05-01

    The growth of edge-facets on InP crystals has been investigated using microscopy. The solid/liquid interface in the region of edge-facets was found to have a knife-edged shape, while that of a region without facets had a smooth shape. The irregular patterns of edge-facets point to instability in the growth at the periphery of a crystal, and this instability is found to be related to the generation of twins.

  19. The electrochemical capacitance-voltage characterization of InP based p-i-n structures

    Science.gov (United States)

    Wang, Li-wei; Lu, Yi-dan; Xu, Jin-tong; Li, Xiang-yang

    2013-09-01

    Electrochemical Capacitance-Voltage (EC-V) profiling is currently one of the most often used methods for majority carrier concentration depth profiling of semiconductors. The experiments of EC-V profiling on InP based structures were conducted by Wafer Profiler CVP21, and there are two problems in the experiments of InP based p-i-n structures : a)the experimental results of EC-V profiling of i layer were not in line with the theoretically data after the EC-V profiling of p layer, which can be measured within the error range; b) The measurements of etching depth were not very accurate. In this paper, we made comparative experiments on InP based n-i-n structures, and find out a method to deal with the first problem: firstly etch p layer before EC-V profiling, so we can gain a relatively accurate result of EC-V profiling of i layer. Besides, use back contacts instead of front contacts to do the EC-V profiling according to the instruction book of the Wafer Profiler CVP21. Then the author tried to infer the reason that results in the first problem theoretically. Meanwhile we can calibrate the etching depth through Profile-system and Scanning Probe Microscope (SPM). And there are two possible reasons which result in the second problem: the defects of the semiconductors and the electrolyte we used to etch the semiconductors.

  20. Structure of InP single crystals irradiated with reactor neutrons

    International Nuclear Information System (INIS)

    The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast neutrons and the full spectrum of the reactor neutrons and subsequent heat treatment procedures. The lattice parameter of InP single crystals decreases under neutron irradiation as opposed to other III-V semiconductor compounds. Fast neutrons make the main contribution to the change of the lattice parameter. A thermal neutron component initiates the formation of Sn atoms in the material, but does not influence the change of the lattice parameter significantly. Heat treatment of the irradiated samples up to 600 deg. C causes annealing of the radiation defects and recovery of the lattice parameter. With increasing neutron fluences, the lattice parameter becomes even higher than before irradiation. The data analysis proves the following assumption: anti-site defects PIn mainly contribute to the lattice parameter decrease during neutron irradiation of InP. In this case, anti-site imperfections produce an effect similar to that of vacancy defects

  1. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  2. Ab-Initio Calculations of Electronic Properties of InP and GaP

    Science.gov (United States)

    Malozovsky, Y.; Franklin, L.; Ekuma, E. C.; Zhao, G. L.; Bagayoko, D.

    2013-06-01

    We present results from ab-initio, self-consistent local density approximation (LDA) calculations of electronic and related properties of zinc blende indium phosphide (InP) and gallium phosphide (GaP). We employed a LDA potential and implemented the linear combination of atomic orbitals (LCAO) formalism. This implementation followed the Bagayoko, Zhao and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). This method searches for the optimal basis set that yields the minima of the occupied energies. This search entails increases of the size of the basis set and the related modifications of angular symmetry and of radial orbitals. Our calculated, direct band gap of 1.398 eV (1.40 eV), at the Γ point, is in excellent agreement with experimental values, for InP, and our preliminary result for the indirect gap of GaP is 2.135 eV, from the Γ to X high symmetry points. We have also calculated electron and hole effective masses for both InP and GaP. These calculated properties also agree with experimental findings. We conclude that the BZW-EF method could be employed in calculations of electronic properties of high-Tc superconducting materials to explain their complex properties.

  3. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  4. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.

    2008-01-01

    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  5. Ferromagnetic bulk glassy alloys

    International Nuclear Information System (INIS)

    This paper deals with the review on the formation, thermal stability and magnetic properties of the Fe-based bulk glassy alloys in as-cast bulk and melt-spun ribbon forms. A large supercooled liquid region over 50 K before crystallization was obtained in Fe-(Al, Ga)-(P, C, B, Si), Fe-(Cr, Mo, Nb)-(Al, Ga)-(P, C, B) and (Fe, Co, Ni)-Zr-M-B (M=Ti, Hf, V, Nb, Ta, Cr, Mo and W) systems and bulk glassy alloys were produced in a thickness range below 2 mm for the Fe-(Al, Ga)-(P, C, B, Si) system and 6 mm for the Fe-Co-(Zr, Nb, Ta)-(Mo, W)-B system by copper-mold casting. The ring-shaped glassy Fe-(Al, Ga)-(P, C, B, Si) alloys exhibit much better soft magnetic properties as compared with the ring-shaped alloy made from the melt-spun ribbon because of the formation of the unique domain structure. The good combination of high glass-forming ability and good soft magnetic properties indicates the possibility of future development as a new bulk glassy magnetic material

  6. Heat transport in bulk/nanoporous/bulk silicon devices

    Energy Technology Data Exchange (ETDEWEB)

    Criado-Sancho, M. [Departamento de Ciencias y Técnicas Físicoquimicas, Facultad de Ciencias, UNED, Senda del Rey 9, 20040 Madrid (Spain); Jou, D., E-mail: David.Jou@uab.cat [Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Institut d' Estudis Catalans, Carme 47, 08001 Barcelona, Catalonia (Spain)

    2013-02-04

    We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size.

  7. InP tunnel junction for InGaAs/InP tandem solar cells

    Science.gov (United States)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-10-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  8. Bulk materials handling review

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2007-02-15

    The paper provides details of some of the most important coal handling projects and technologies worldwide. It describes development by Aubema Crushing Technology GmbH, Bedeschi, Cimbria Moduflex, DBT, Dynamic Air Conveying Systems, E & F Services, InBulk Technologies, Nord-Sen Metal Industries Ltd., Pebco Inc, Primasonics International Ltd., R.J.S. Silo Clean (International) Ltd., Takraf GmbH, and The ACT Group. 17 photos.

  9. Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

    Science.gov (United States)

    Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

    2015-06-01

    The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. PMID:25828351

  10. Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

    Science.gov (United States)

    Oomae, H.; Irizawa, S.; Jinbo, Y.; Toyota, H.; Kambayashi, T.; Uchitomi, N.

    2013-09-01

    The detailed crystalline structure of molecular beam epitaxially grown MnAs thin films on InP(001) substrate has been investigated using high resolution X-ray diffraction techniques. Reciprocal space mapping of the MnAs/InP(001) samples indicates that the MnAs has a cubic zinc-blende (zb) structure with the epitaxial relationship zb-MnAs[110]|InP[110]. The lattice constant of zb-MnAs is ˜6.06 Å. The MnAs lattice is relaxed and is mosaic-like likely due to large lattice mismatch between the film and InP substrate. The isotropic nature of the magnetic properties supported our conjecture that the MnAs epitaxial film under study has indeed a cubic structure.

  11. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

    International Nuclear Information System (INIS)

    We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20–65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies. (paper)

  12. Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence

    International Nuclear Information System (INIS)

    Using ab-initio methods, atomic structures and electronic properties of InP (001)/HfO2 (001) interface are studied within the framework of density functional theory. We examine the InP/HfO2 model interface electronic structures under varying oxidation conditions. The effects of indium and phosphorous concentrations on interfacial bonding, defect states, band offsets, and the thermodynamic stability at the interface are also investigated. The origin of interfacial gap states in InP (001)/HfO2 (001) interface are proposed, mainly from the P-rich oxides, which is validated by our experimental work. This highlights the importance of surface passivation prior to high-κ deposition based on the in situ spectroscopic results of atomic layer deposition of HfO2 on InP

  13. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  14. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  15. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    Science.gov (United States)

    Grym, Jan; Procházková, Olga; Yatskiv, Roman; Piksová, Kateřina

    2011-05-01

    Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content.

  16. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    Directory of Open Access Journals (Sweden)

    Piksová Kateřina

    2011-01-01

    Full Text Available Abstract Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content.

  17. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    International Nuclear Information System (INIS)

    Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content. (paper)

  18. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    Science.gov (United States)

    Grym, Jan; Yatskiv, Roman

    2013-04-01

    Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.

  19. Enhanced Eshelby Twist on Thin Wurtzite InP Nanowires and Measurement of Local Crystal Rotation

    Science.gov (United States)

    Tizei, L. H. G.; Craven, A. J.; Zagonel, L. F.; Tencé, M.; Stéphan, O.; Chiaramonte, T.; Cotta, M. A.; Ugarte, D.

    2011-11-01

    We have performed a detailed study of the lattice distortions of InP wurtzite nanowires containing an axial screw dislocation. Eshelby predicted that this kind of system should show a crystal rotation due to the dislocation induced torque. We have measured the twisting rate and the dislocation Burgers vector on individual wires, revealing that nanowires with a 10-nm radius have a twist up to 100% larger than estimated from elasticity theory. The strain induced by the deformation has a Mexican-hat-like geometry, which may create a tube-like potential well for carriers.

  20. Influence of Grain Size on Electrical and Optical Properties of InP Films

    Institute of Scientific and Technical Information of China (English)

    Mustafa (O)ztas

    2008-01-01

    InP film samples were prepared by spray pyrolysis technique using aqueous solutions of lnCl3 and Na2HPO4,which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film.The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.

  1. Nuclear geophysics in space and atmospheric research at INPE/BRAZIl

    Science.gov (United States)

    Nordemann, D. J. R.; Pereira, E. B.; Marinho, E. V. A.; Sircillineto, F.

    1986-05-01

    In recent years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field a contribution has been made to the history of meteorite falls on our planet and its possible collision with large meteorites, which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In atmospheric research, spatial and temporal variations of radon measurements in the lower atmosphere permit correlations from micrometeorology to mesoscale phenomena, related to the dynamics of air masses.

  2. InP based lasers and optical amplifiers with wire-/dot-like active regions

    International Nuclear Information System (INIS)

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 μm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling

  3. Nuclear geophysics in space and atmospheric reserch at INPE/BRAZIl

    International Nuclear Information System (INIS)

    During the last years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field it may be considered as a contribution to the history of meteorite falls in our planet or possible collision with big meteorites which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In the atmospheric research field, spatial and temporal variations of radon measurements in the lower atmosphere allow correlations from micrometeorology to worlwide scale through mesoscale, in the interpretation of phenomena which deal with the dynamics of air masses. (Author)

  4. Frequency stability of InP HBT over 0.2 to 220 GHz

    Science.gov (United States)

    Zhijiang, Zhou; Kun, Ren; Jun, Liu; Wei, Cheng; Haiyan, Lu; Lingling, Sun

    2015-02-01

    The frequency stabilities of InP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

  5. Wormholes in Bulk Viscous Cosmology

    OpenAIRE

    Jamil, Mubasher

    2008-01-01

    We investigate the effects of the accretion of phantom energy with non-zero bulk viscosity onto a Morris-Thorne wormhole. We have found that if the bulk viscosity is large then the mass of wormhole increases rapidly as compared to small or zero bulk viscosity.

  6. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  7. Explosive bulk charge

    Science.gov (United States)

    Miller, Jacob Lee

    2015-04-21

    An explosive bulk charge, including: a first contact surface configured to be selectively disposed substantially adjacent to a structure or material; a second end surface configured to selectively receive a detonator; and a curvilinear side surface joining the first contact surface and the second end surface. The first contact surface, the second end surface, and the curvilinear side surface form a bi-truncated hemispherical structure. The first contact surface, the second end surface, and the curvilinear side surface are formed from an explosive material. Optionally, the first contact surface and the second end surface each have a substantially circular shape. Optionally, the first contact surface and the second end surface consist of planar structures that are aligned substantially parallel or slightly tilted with respect to one another. The curvilinear side surface has one of a smooth curved geometry, an elliptical geometry, and a parabolic geometry.

  8. The Incredible Bulk

    CERN Document Server

    Fukushima, Keita; Kumar, Jason; Sandick, Pearl; Yamamoto, Takahiro

    2014-01-01

    Recent experimental results from the LHC have placed strong constraints on the masses of colored superpartners. The MSSM parameter space is also constrained by the measurement of the Higgs boson mass, and the requirement that the relic density of lightest neutralinos be consistent with observations. Although large regions of the MSSM parameter space can be excluded by these combined bounds, leptophilic versions of the MSSM can survive these constraints. In this paper we consider a scenario in which the requirements of minimal flavor violation, vanishing $CP$-violation, and mass universality are relaxed, specifically focusing on scenarios with light sleptons. We find a large region of parameter space, analogous to the original bulk region, for which the lightest neutralino is a thermal relic with an abundance consistent with that of dark matter. We find that these leptophilic models are constrained by measurements of the magnetic and electric dipole moments of the electron and muon, and that these models have ...

  9. Bulk muscles, loose cables.

    Science.gov (United States)

    Liyanage, Chamari R D G; Kodali, Venkata

    2014-01-01

    The accessibility and usage of body building supplements is on the rise with stronger internet marketing strategies by the industry. The dangers posed by the ingredients in them are underestimated. A healthy young man came to the emergency room with palpitations and feeling unwell. Initial history and clinical examination were non-contributory to find the cause. ECG showed atrial fibrillation. A detailed history for any over the counter or herbal medicine use confirmed that he was taking supplements to bulk muscle. One of the components in these supplements is yohimbine; the onset of symptoms coincided with the ingestion of this product and the patient is symptom free after stopping it. This report highlights the dangers to the public of consuming over the counter products with unknown ingredients and the consequential detrimental impact on health. PMID:25326558

  10. Growth of SiO2 on InP substrate by liquid phase deposition

    International Nuclear Information System (INIS)

    We have grown silicon dioxide (SiO2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO2 saturated hydrofluorosilicic acid (H2SiF6), 0.1 M boric acid (H3BO3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO2 film were about 187.5 A/h and 1.495 under the constant growth temperature of 40 deg. C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H2O2) that can regulate the concentration of OH- ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO2 saturated H2SiF6 in treatment solution.

  11. Annealing of irradiated n+p InP buried homojunctions

    Science.gov (United States)

    Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

    1994-01-01

    At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

  12. Quantum confinement and ultrafast dephasing dynamics in InP nanocrystals

    International Nuclear Information System (INIS)

    The electronic level structure and dephasing dynamics of InP nanocrystals in the strong quantum-confinement regime are studied by two complementary techniques: nanosecond hole burning and the femtosecond three-pulse photon echo. Hole burning yields the homogeneous electronic level structure while the photon echo allows the extraction of the linewidth of the band-gap transition. The congestion of electronic levels observed close to the band-edge transition in the hole-burning experiments gives rise to a pulse-width-limited initial decay in the photon-echo signal. The level structure is calculated and assigned using a model which includes valence-band mixing. The homogeneous linewidth of the band-edge transition is approximately 5 meV at 20 K and is broadened considerably at higher temperatures. The temperature dependence of the linewidth is consistent with an intrinsic dephasing mechanism of coupling to low-frequency acoustic modes mediated by the deformation potential. Quantum-confinement effects in III-V semiconductor InP are compared to those of the prototypical CdSe II-VI semiconductor nanocrystal system. copyright 1997 The American Physical Society

  13. Structural, electronic, and magnetic properties of Mn-Doped InP nanowire

    Science.gov (United States)

    Srivastava, Pankaj; Kumar, Avaneesh; Jaiswal, Neeraj K.

    2016-04-01

    In the present work, we investigate structural stability, electronic and magnetic properties of InP nanowire (NW) oriented along (111) direction and doped with Mn using first-principles calculations. Structural analysis revealed that incorporation of Mn atom in NW geometry results in strong reconstructions of surface atoms relative to core atoms. For single Mn-doped NW, partially filled d orbital of Mn atom results in magnetic semiconducting behavior due to non-degenerate electronic band-gap (∼0.1 eV). We have further considered the effect of Mn-Mn coupling on the electronic/magnetic properties of InP NW. Anti-ferromagnetic coupling state is observed as most favorable state based on total energy calculations. A half-metallic ferromagnetic coupling is also observed in case of Mn-pair doped at sub-surface of NW. The present results predict that the system doped with Mn pair between surface and core region are energetically more favorable than others.

  14. Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

    International Nuclear Information System (INIS)

    We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using photoelectric conversion (PC) devices formed on p–n junction substrates. The photocurrent measurements revealed that the current from PC devices changed in response to the incident light power and the thickness of the top layer on the p–n interface. Since the photocarriers contributing to the observed photocurrents are excited by the photons reaching the p–n interface through the top layer, the photocurrents give us information on the optical absorption properties of the top layer. The photocurrents observed on a porous device with a porous structure in the top layer were lower than that of a non-porous device, indicating that the absorption properties of InP were enhanced after the formation of porous structures. This phenomenon can be explained in terms of absorption coefficient, α, increased by the light scattering and the sub-bandgap absorption in the porous layer.

  15. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    International Nuclear Information System (INIS)

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of ηp=14.4±0.4% and ηp=14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  16. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel; Berdaguer, Pierre; Drisse, O.; Derouin, Eric; Konczykowska, Agnieszka; Moulu, Jean; Dupuy, Jean-Yves; Jorge, Fellipe; Gentner, Jean-Louis; Krozer, Viktor; Johansen, Tom Keinicke; Scavennec, Andre

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior...

  17. Enrichment of InP crystal surface by indium as a result of selective material evaporation under pulsed laser irradiation

    International Nuclear Information System (INIS)

    Laser irradiation flux threshold density under which local melting-like changes on InP, GaAs and InAs crystals surface were established. Conclusion was made that changes are due to compounds decomposition under beam heating of surface to temperatures lower than compound melting point

  18. High detection performance of particle detectors based on SI InP doped with Ti and Zn

    Czech Academy of Sciences Publication Activity Database

    Gorodynskyy, Vladyslav; Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2008-01-01

    Roč. 55, č. 5 (2008), s. 2785-2788. ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512 Keywords : radiation detection * InP * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.518, year: 2008

  19. A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor;

    2008-01-01

    (DHBT) technology using coplanar waveguide structures. To the best of our knowledge, this is the first demonstration of an SHM using InP DHBT technology at millimeter-wave frequencies. The measured results demonstrate a conversion gain of 10.3 dB at 45 GHz with an LO power of only 1 mW. The fundamental...

  20. Inflation from bulk viscosity

    CERN Document Server

    Bamba, Kazuharu

    2015-01-01

    We explore the perfect fluid description of the inflationary universe. In particular, we investigate a fluid model with the bulk-viscosity term. We find that the three observables of inflationary cosmology: the spectral index of the curvature perturbations, the tensor-to-scalar ratio of the density perturbations, and the running of the spectral index, can be consistent with the recent Planck results. We also reconstruct the explicit equation of state (EoS) of the viscous fluid from the spectral index of the curvature perturbations compatible with the Planck analysis. In the reconstructed models of the viscous fluid, the tensor-to-scalar ratio of the density perturbations can satisfy the constraints obtained from the Planck satellite. The running of the spectral index can explain the Planck data. In addition, it is demonstrated that in the reconstructed models of the viscous fluid, the graceful exit from inflation can be realized. Furthermore, we show that the singular inflation can occur in the viscous fluid ...

  1. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel;

    2015-01-01

    restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and...... three low-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low...

  2. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  3. Electron-beam-induced dislocations in GaAs and InP single crystals

    International Nuclear Information System (INIS)

    Dislocations have been induced in GaAs and InP single crystals by the electron beam exposure in a scanning electron microscope, with neither a mechanical bending nor a special pretreatment of the specimens. The generation and movement of the dislocations were not dependent upon the electron beam energy, crystal orientation, dopant nature, or doping level, but only on the electron beam current; a beam current of (1--2)x10-6 A was found to be the threshold for the dislocation release. By increasing the beam current up to 5x10-6 A, As or P losses from the specimen surface have been evidenced. In GaAs (001)-oriented crystals, the dislocations were found to be of pure edge type with the Burgers vector normal to the sample surface. A climb process, involving As or P vacancy migration, has been assumed to be the physical mechanism responsible for the dislocation origin

  4. Radiation hardening of InP solar cells for space applications

    International Nuclear Information System (INIS)

    The aim of this work is to develop a radiation resistant thin InP-based solar cells for space applications on more mechanically resistant, lighter, and cheaper substrates. In this paper, we present the development of a p+/nn+ InP-based solar cell structures with very thin emitter and base layers. A thin emitter helps to increase the collection of carriers generated by high energy incident photons from the solar spectrum. The use of a thin n base structure should improve the radiation resistance of this already radiation resistant technology. A remarkable improvement of high energy photons response is shown for InP solar cells with emitters 400 A thick

  5. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Science.gov (United States)

    Lumb, M. P.; Yakes, M. K.; González, M.; Bennett, M. F.; Schmieder, K. J.; Affouda, C. A.; Herrera, M.; Delgado, F. J.; Molina, S. I.; Walters, R. J.

    2016-05-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.

  6. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas;

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a...... direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small......-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies....

  7. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas;

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...... measured S-parameters. It is shown that the model prediction of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting...... point for the extraction of a large-signal model. The developed largesignal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies (77 GHz)....

  8. Determining the base resistance of InP HBTs: An evaluation of methods and structures

    Science.gov (United States)

    Nardmann, Tobias; Krause, Julia; Pawlak, Andreas; Schroter, Michael

    2016-09-01

    Many different methods can be found in the literature for determining both the internal and external base series resistance based on single transistor terminal characteristics. Those methods are not equally reliable or applicable for all technologies, device sizes and speeds. In this review, the most common methods are evaluated regarding their suitability for InP heterojunction bipolar transistors (HBTs) based on both measured and simulated data. Using data generated by a sophisticated physics-based compact model allows an evaluation of the extraction method precision by comparing the extracted parameter value to its known value. Based on these simulations, this study provides insight into the limitations of the applied methods, causes for errors and possible error mitigation. In addition to extraction methods based on just transistor terminal characteristics, test structures for separately determining the components of the base resistance from sheet and specific contact resistances are discussed and applied to serve as reference for the experimental evaluation.

  9. Effects of pressure on deep levels in semiconductors: The MFe center in InP

    International Nuclear Information System (INIS)

    This work investigated the effects of hydrostatic pressure on the properties and bistability of the scientifically challenging and technologically important deep MFe center in iron (Fe)-doped, n-type indium phosphide (InP). When occupied by electrons, the center can be reversibly placed in either of two configurations, termed A and B, by the proper choice of electric biasing conditions and temperature. Pressure has a very large influence on the balance between these two configurations, favoring A over B. Above 8 kbar essentially only the A configuration is observed. This result, along with detailed studies of the effects of pressure on the energetics of the two configurations and on the kinetics of the B→A transformation, provide important new insights about the nature of the two configurations and their associated deep levels. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Radiation-hard, high efficiency InP solar cell and panel development

    International Nuclear Information System (INIS)

    Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 1015 1 MeV electrons, and 12% after 1016. These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

  11. Channeling investigations of MeV Zn implanted InP

    Science.gov (United States)

    Kling, A.; Krause, H.; Flagmeyer, R.-H.; Vogt, J.; Butz, T.

    1995-03-01

    The high-energy Zn + ion implantation of InP is a promising method for the formation of buried p-type conducting layers. Defect properties and inclusion mechanism of zinc implanted samples with energies of 1.2 and 2.5 MeV to doses of 5 × 10 14-5 × 10 15 cm -2 at a temperature of 200°C were investigated with ion beam methods, XTEM and SNMS to some extent. Also the influence of rapid thermal annealing on the structural properties was studied. After implantation we found no evidence for amorphization or extended defects but point-like defects. During annealing the surface region recovered nearly completely while in depth the point-like defects agglomerated in dislocation loops. Further we observed a remarkable redistribution of the Zn atoms due to annealing.

  12. Scientific and technical progress in high-energy astrophysics at INPE

    International Nuclear Information System (INIS)

    The recent advances in high-energy Astrophysics pertains to the study of compact objects in galactic nuclei, binary systems and pulsars. These aspects are best understood by the study of the emissions in X- and gamma rays of these objects through the temporal variation in flux and spectrum. The Southern Hemisphere offers some of the unique objects for investigations such as galactic center, the Vela pulsar etc. For high temporal and spectra resolution studies two telescopes 'GeLi' and 'Pulsar' were designed and constructed. To support these scientific activities, a program in balloon launching and data acquisition facilities has been developed since 1971. The 'Balloon Launching Center' of INPE has capacity to launch balloons of -850,000 m3 with payloads weighting about 1,000 Kg. Taking advantage of these facilities, project 'Bantar', with the goal to measure the atmospheric gamma-ray radiation in the Antartic Region, is under progress. (Author)

  13. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    Science.gov (United States)

    Pantzas, K.; Le Bourhis, E.; Patriarche, G.; Troadec, D.; Beaudoin, G.; Itawi, A.; Sagnes, I.; Talneau, A.

    2016-03-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m-2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  14. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  15. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

    International Nuclear Information System (INIS)

    Depth resolved positron annihilation measurements were carried out on 85 keV and 1 MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 1015 cm-2 and coexistence of monovacancies and divacancies for 1016 cm-2 dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made

  16. Frequency stability of InP HBT over 0.2 to 220 GHz

    International Nuclear Information System (INIS)

    The frequency stabilities of InP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device. (semiconductor devices)

  17. A 20-GHz ultra-high-speed InP DHBT comparator

    International Nuclear Information System (INIS)

    An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm2. It consumes 440 mW from a single −4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China. (semiconductor integrated circuits)

  18. A 20-GHz ultra-high-speed InP DHBT comparator

    Institute of Scientific and Technical Information of China (English)

    Huang Zhenxing; Zhou Lei; Su Yongbo; Jin Zhi

    2012-01-01

    An ultra-high-speed,master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frcquency of 170 GHz,The complete chip die,including bondpads,is 0.75 × 1.04 mm2.It consumes 440 mW from a single -4 V power supply,excluding the clock part.77 DHBTs have been used in the monolithic comparator.A full Nyquist test has been performed up to 20 GHz,with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz.To our knowledge,this is the first InP based integrated circuit including more than 70 DHBTs,and it achieves the highest sampling rate found on the mainland of China.

  19. Mining the bulk positron lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Aourag, H.; Guittom, A. [Centre de Recherche Nucleaire d' Alger (CRNA), Alger Gare - Algiers (Algeria)

    2009-02-15

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Mining the bulk positron lifetime

    International Nuclear Information System (INIS)

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Advances in bulk port development

    Energy Technology Data Exchange (ETDEWEB)

    Soros, P. (Soros Associates Consulting Engineers, New York, NY (USA))

    1991-03-01

    The article features several recently developed bulk ports which illustrate aspects of new technology or concepts in maritime transport. Low handling capacity bulk terminals at Ponta da Madeira, Brazil and Kooragang Island, Australia and the low-cost bulk port at Port of Corpus Christi, Texas are described. Operations at the ports of Pecket and Tocopilla in Chile, which had special technical problems, are mentioned. Coal terminals at Port Kembla, Australia and St. Johns River in Florid Jacksonville, Florida are featured as examples of terminals which had to be designed to meet high environmental standards. 13 refs., 2 figs., 14 photos.

  2. Bulk Nuclear Properties from Reactions

    OpenAIRE

    Danielewicz, P.

    2002-01-01

    Extraction of bulk nuclear properties by comparing reaction observables to results from semiclassical transport-model simulations is discussed. Specific properties include the nuclear viscosity, incompressibility and constraints on the nuclear pressure at supranormal densities.

  3. Bulk charges in eleven dimensions

    CERN Document Server

    Hawking, Stephen William

    1998-01-01

    Eleven dimensional supergravity has electric type currents arising from the Chern-Simon and anomaly terms in the action. However the bulk charge integrates to zero for asymptotically flat solutions with topological trivial spatial sections. We show that by relaxing the boundary conditions to generalisations of the ALE and ALF boundary conditions in four dimensions one can obtain static solutions with a bulk charge preserving between 1/16 and 1/4 of the supersymmetries. One can introduce membranes with the same sign of charge into these backgrounds. This raises the possibility that these generalized membranes might decay quantum mechanically to leave just a bulk distribution of charge. Alternatively and more probably, a bulk distribution of charge can decay into a collection of singlely charged membranes. Dimensional reductions of these solutions lead to novel representations of extreme black holes in four dimensions with up to four charges. We discuss how the eleven-dimensional Kaluza-Klein monopole wrapped a...

  4. Self-catalyzed growth of pure zinc blende 〈110〉 InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Wu, Yao; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2015-07-13

    We demonstrate the self-catalyzed vapor-liquid-solid growth of 〈110〉 InP nanowires (NWs) by metal organic chemical vapor deposition. The 〈110〉 InP nanowire is formed via a spontaneous kinking from the original 〈111〉 growth direction, which is attributed to instabilities at the liquid/solid interface caused by a fast In incorporation into the droplet. The NW length before kinking has a nearly linear relationship with the diameter, offering a way to control the NW morphology for different applications. The 〈110〉 nanowire exhibits pure zinc blende crystal structure and a narrower emission linewidth in comparison with a typical 〈111〉 nanowire, demonstrating its potential applications in high-performance electronic and photonic devices.

  5. Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

    Institute of Scientific and Technical Information of China (English)

    HUANG Lei; SUN Bo; YAO Jian-quan; WANG Peng

    2008-01-01

    The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied.In collinear phase-matching,the optimum phase-matching wave bands of these two crystals are calculated.The optimum phase-matching wave bands in GaAs and InP are 0.95~1.38 μm and 0.7~0.96 μm respectively.The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed.The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed.It can serve for the following experiments as a theoretical evidence and a reference aswell.

  6. The LANDSAT system operated in Brazil by CNPq/INPE - results obtained in the area of mapping and future perspectives

    Science.gov (United States)

    Dejesusparada, N. (Principal Investigator); Barbosa, M. N.

    1981-01-01

    The LANDSAT system, operated in the country by CNPg/INPE since 1973, systematically acquires, produces, and distributes both multispectral and panchromatic images obtained through remote sensing satellites to thousands of researchers and technicians involved in the natural resources survey. To cooperate in the solution of national problems, CNPq/INPE is developing efforts in the area of manipulation of those images with the objective of making them useful as planimetric bases for the simple revision of already published maps or for its utilization as basic material in regions not yet reliability mapped. The results obtained from performed tests are presented and the existing limitations are discussed. The new system purchased to handle data from the next series of LANDSAT as well as from MAPSAT and SPOT which will be in operation within the 80's decade, and are designed not only for natural resources survey but also for the solution of cartographic problems.

  7. Self-catalyzed growth of pure zinc blende 〈110〉 InP nanowires

    International Nuclear Information System (INIS)

    We demonstrate the self-catalyzed vapor-liquid-solid growth of 〈110〉 InP nanowires (NWs) by metal organic chemical vapor deposition. The 〈110〉 InP nanowire is formed via a spontaneous kinking from the original 〈111〉 growth direction, which is attributed to instabilities at the liquid/solid interface caused by a fast In incorporation into the droplet. The NW length before kinking has a nearly linear relationship with the diameter, offering a way to control the NW morphology for different applications. The 〈110〉 nanowire exhibits pure zinc blende crystal structure and a narrower emission linewidth in comparison with a typical 〈111〉 nanowire, demonstrating its potential applications in high-performance electronic and photonic devices

  8. InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer

    Institute of Scientific and Technical Information of China (English)

    L(U) Xiao-jing; WU Ju; XU Bo; ZENG Yi-ping; WANG Biao-qiang; WANG Zhan-guo

    2007-01-01

    An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure on the In0.53Ga0.47As and In0.52Al0.48As buffer layer lattice-matched to InP(001) substrate using mo-lecular beam epitaxy. The effects of AlAs insertion on the InAs nanostructures were investigated and discussed.

  9. Ab-initio Calculations of Electronic Properties of AlP, GaP and InP

    Science.gov (United States)

    Malozovsky, Yuriy; Saliev, Azizjon; Franklin, Lashaunda; Ekuma, Chinedu; Zhao, Guang-Lin; Bagayoko, Diola

    2014-03-01

    We present results from ab-initio, self consistent local density approximation (LDA) calculations of electronic and related properties of zinc blende aluminum, gallium and indium phosphides (AlP, GaP & InP). We employed a local density approximation (LDA) potential and implemented the linear combination of atomic orbitals (LCAO) formalism. This implementation followed the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). Our calculated, indirect band gap of 2.56 eV for AlP, and of 2.14 eV for GaP, from Γ to X, are in excellent agreement with experimental values. Our calculated direct band gap of 1.40 eV, at Γ -point for InP is also in excellent agreement with experimental value. We also report calculated electron and hole effective masses for AlP, GaP and InP and total (DOS) and partial (pDOS) densities of states. This research is funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE-NA0001861), LaSPACE, and LONI-SUBR.

  10. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  11. Characterization of the S. cerevisiae inp51 mutant links phosphatidylinositol 4,5-bisphosphate levels with lipid content, membrane fluidity and cold growth.

    Science.gov (United States)

    Córcoles-Sáez, Isaac; Hernández, Maria Luisa; Martínez-Rivas, Jose Manuel; Prieto, Jose A; Randez-Gil, Francisca

    2016-03-01

    Phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] and its derivatives diphosphoinositol phosphates (DPIPs) play key signaling and regulatory roles. However, a direct function of these molecules in lipid and membrane homeostasis remains obscure. Here, we have studied the cold tolerance phenotype of yeast cells lacking the Inp51-mediated phosphoinositide-5-phosphatase. Genetic and biochemical approaches showed that increased metabolism of PI(4,5)P2 reduces the activity of the Pho85 kinase by increasing the levels of the DPIP isomer 1-IP7. This effect was key in the cold tolerance phenotype. Indeed, pho85 mutant cells grew better than the wild-type at 15 °C, and lack of this kinase abolished the inp51-mediated cold phenotype. Remarkably, reduced Pho85 function by loss of Inp51 affected the activity of the Pho85-regulated target Pah1, the yeast phosphatidate phosphatase. Cells lacking Inp51 showed reduced Pah1 abundance, derepression of an INO1-lacZ reporter, decreased content of triacylglycerides and elevated levels of phosphatidate, hallmarks of the pah1 mutant. However, the inp51 phenotype was not associated to low Pah1 activity since deletion of PAH1 caused cold sensitivity. In addition, the inp51 mutant exhibited features not shared by pah1, including a 40%-reduction in total lipid content and decreased membrane fluidity. These changes may influence the activity of membrane-anchored and/or associated proteins since deletion of INP51 slows down the transit to the vacuole of the fluorescent dye FM4-64. In conclusion, our work supports a model in which changes in the PI(4,5)P2 pool affect the 1-IP7 levels modulating the activity of Pho85, Pah1 and likely additional Pho85-controlled targets, and regulate lipid composition and membrane properties. PMID:26724696

  12. TiO{sub 2} as gate oxide on enhancement-mode N-channel sulfur-treated InP MOSFET

    Energy Technology Data Exchange (ETDEWEB)

    Lee, M.K.; Yen, C.F. [National Sun Yat-sen Univ., Taiwan (China). Dept. of Electrical Engineering

    2010-07-01

    This presentation discussed the use of titanium dioxide (TiO{sub 2}) in fuel cells as cathodes and catalysts, with particular reference to the feasibility of using TiO{sub 2} as the gate oxide in a MOSFET to make the integration more compact. An experiment was conducted aimed at fabricating an enhancement-mode n-channel sulfur-treated indium phosphide (InP) MOSFET with liquid phase deposition (LPD)-TiO{sub 2} as gate oxide. The TiO-2 film prepared by LPD on ammonium sulfide treated InP showed good electrical characteristics. The leakage currents can reach 2.1 x 10{sup -7} and 7.4 x 10{sup -7} A/cm{sup 2} at {+-}0.5 MV/cm. The fabricated enhancement-mode n-channel InP MOSFET exhibited the transconductance of 43 mS/mm and the electron field mobility of 348 cm{sup 2}/V s. The transconductance of MOSFET was higher with higher dielectric constant TiO{sub 2} as the gate oxide. Treatment of (NH{sub 4})2Sx prevented InP from oxidizing after cleaning and improved the interface properties of the MOS structure. Amorphous TiO{sub 2} film prepared by LPD can be deposited on InP substrate at near room temperature and can prevent the leakage current from the grain boundaries of polycrystalline structure. In this study, Zn doped p-type InP was used as the substrate. After cleaning and sulfidation, the InP was ready for MOSFET process. An aqueous solution of H{sub 2}TiF{sub 6} was used as the TiO{sub 2} deposition solution. It was concluded that the LPD-TiO2/S-InP capacitor had lower leakage current, higher k value, and lower Dit. 4 refs., 6 figs.

  13. Looking for a bulk point

    CERN Document Server

    Maldacena, Juan; Zhiboedov, Alexander

    2015-01-01

    We consider Lorentzian correlators of local operators. In perturbation theory, singularities occur when we can draw a position-space Landau diagram with null lines. In theories with gravity duals, we can also draw Landau diagrams in the bulk. We argue that certain singularities can arise only from bulk diagrams, not from boundary diagrams. As has been previously observed, these singularities are a clear diagnostic of bulk locality. We analyze some properties of these perturbative singularities and discuss their relation to the OPE and the dimensions of double-trace operators. In the exact nonperturbative theory, we expect no singularity at these locations. We prove this statement in 1+1 dimensions by CFT methods.

  14. Gamma probe dry bulk densities

    International Nuclear Information System (INIS)

    The gamma density probe is a useful instrument for measuring water content in small volumes of soil. Essentially, the gamma probe measures the density of the soil and water between a source and a detector. To transpose the gamma densities into water content, the dry bulk density of the soil is needed. A nondestructive method for estimating dry bulk densities for use with the gamma probe is proposed. The procedure is based on the assumption that water content values in a field dry condition were more stable than the dry bulk density values and could be transferred from one point to another. The procedure was successfully used on three areas in Reynolds Creek Experimental Watershed in southwest Idaho. (U.S.)

  15. Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Ponseca jr., C.S.; Němec, Hynek; Wallentin, J.; Anttu, N.; Beech, J.P.; Iqbal, A.; Borgström, M.; Pistol, M.-E.; Samuelson, L.; Yartsev, A.

    2014-01-01

    Roč. 90, č. 8 (2014), "085405-1"-"085405-7". ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Grant ostatní: AVČR(CZ) M100101218 Institutional support: RVO:68378271 Keywords : time-resolved terahertz spectrocopy * semiconductor nanostructures * mobility * effective medium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  16. Bulk Viscosity of Interacting Hadrons

    OpenAIRE

    Wiranata, A.; M. Prakash

    2009-01-01

    We show that first approximations to the bulk viscosity $\\eta_v$ are expressible in terms of factors that depend on the sound speed $v_s$, the enthalpy, and the interaction (elastic and inelastic) cross section. The explicit dependence of $\\eta_v$ on the factor $(\\frac 13 - v_s^2)$ is demonstrated in the Chapman-Enskog approximation as well as the variational and relaxation time approaches. The interesting feature of bulk viscosity is that the dominant contributions at a given temperature ari...

  17. Bulk Viscosity of Interacting Hadrons

    CERN Document Server

    Wiranata, A

    2009-01-01

    We show that first approximations to the bulk viscosity $\\eta_v$ are expressible in terms of factors that depend on the sound speed $v_s$, the enthalpy, and the interaction (elastic and inelastic) cross section. The explicit dependence of $\\eta_v$ on the factor $(\\frac 13 - v_s^2)$ is demonstrated in the Chapman-Enskog approximation as well as the variational and relaxation time approaches. The interesting feature of bulk viscosity is that the dominant contributions at a given temperature arise from particles which are neither extremely nonrelativistic nor extremely relativistic. Numerical results for a model binary mixture are reported.

  18. Phosphazene like film formation on InP in liquid ammonia (223 K)

    International Nuclear Information System (INIS)

    An anodic photo-galvanostatic treatment at low current density (1 μA·cm−2) is carried out on n-InP semiconductor in liquid ammonia (223 K). The gradual chemical evolution of the surface is studied as a function of the anodic charge. Proof and reproducibility of the chemical transformation of the surface are clearly evidenced by X-ray photoelectron spectroscopy (XPS) analyses. Like by cyclic voltammetry, the perfect coverage of the InP surface by a thin phosphazene like film is also revealed by XPS data. However, a low anodic charge (≈ 0.5 mC·cm−2) is required by photo-galvanostatic treatment while a higher anodic charge (≈ 7 mC·cm−2) is involved by cyclic voltammetry. The excess of charge could be related to ammonia oxidation during the formation of the passivating film. This result proves the electrochemical oxidation of the solvent as a determinant step of the mechanism film formation. - Highlights: ► Cyclic voltammetry and galvanostatic modes on n-InP in liquid ammonia (223 K). ► A thin film growth is reached by photo-anodic polarization. ► The same phosphazene like film is evidenced by X-ray photoelectron spectroscopy. ► An excess of charge is observed by cyclic voltammetry. ► An electrochemical oxidation step of the solvent is assumed

  19. Improved Power Conversion Efficiency of InP Solar Cells Using Organic Window Layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, N; Lee, K.; Renshaw, C. K.; Xiao, X.; Forrest, Stephen R.

    2011-01-01

    We employ the organic semiconductor 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) as a nanometer thick window layer for p-InP/indium tin oxide (ITO) Schottky barrierdiodesolar cells. The power conversion efficiency is enhanced compared to ITO/InP cells lacking the PTCDA window layer, primarily due to neutralizing InP surface state charges via hole injection from the PTCDA. This leads to an increased ITO/p-InP Schottky barrier height, and hence to an increased open circuit voltage. The power conversion efficiency of the cells increases from 13.2±0.5% for the ITO/InP cell to 15.4±0.4% for the ITO/4 nm PTCDA/p-InP cell under 1 sun, AM1.5G simulated solar illumination. The PTCDA window layer is also shown to contribute to the photocurrent by light absorption followed by exciton dissociation at the organic/inorganic semiconductor interface.

  20. Surface and subsurface damages in nanoindentation tests of compound semiconductor InP

    International Nuclear Information System (INIS)

    Nanoindentation tests were conducted on single-crystal indium phosphide (InP) using a Vickers indenter and a spherical indenter over a wide load range. The resulting indents were examined using scanning electron microscopy, cross-sectional transmission electron microscopy and selected area diffraction. Effects of the indenter type and indentation load on the surface cracking behavior, load–displacement characteristics and subsurface damage were investigated. The results showed that the cracking behavior and critical load for crack generation depends strongly on the indenter geometry and orientation. Pop-in events occur during loading in the case of the spherical indenter, but not in the case of the Vickers indenter. It was demonstrated that dislocations dominate the deformation mechanism, and no phase transformation occurs. The indenter contact immediately causes a high-density dislocation region, below which extend slip bands. The stress field of the indented zone was simulated by the finite element method, and the stress concentration regions corresponded to the high-density dislocation regions

  1. Bombardment-induced ripple topography on GaAs and InP

    International Nuclear Information System (INIS)

    Bombardment-induced ripples have possible application in nano-technology as nano-wires. This paper reviews some of the published experimental data of ripple formation on GaAs and InP resulting from noble gas, oxygen, nitrogen and cesium ion bombardment. The dependences of the ripples and their corresponding wavelengths on substrate temperature, areic dose and (to a lesser extent) angle of incidence were considered. The experimental results were tested against the predictions of the Bradley-Harper theory [J. Vac. Sci. Technol. A 6 (1988) 2390]. Surprisingly good agreement was obtained between the experimental data and this theory. This is probably due to the amorphisation of the substrates under ion bombardment and, thereby, minimising the effect of crystallographic-orientated self-diffusion on metals, and of energy barriers (Ehrlich-Schwoebel barriers) to interlayer surface diffusion. From the data of MacLaren et al. [J. Vac. Sci. Technol. A 10 (1992) 469], the activation energy for surface self-diffusion of GaAs in the temperature range 60-100 deg. C was determined as 0.26 eV

  2. Doping evaluation of InP nanowires for tandem junction solar cells

    Science.gov (United States)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  3. SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar + ion sputtering

    Science.gov (United States)

    Robert-Goumet, C.; Monier, G.; Zefack, B.; Chelda, S.; Bideux, L.; Gruzza, B.; Awitor, O. K.

    2009-10-01

    The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes on InP(1 0 0) surfaces by low Ar + ion sputtering process in UHV conditions from anodized aluminum oxide (AAO) templates. This process is a promising approach in creating ordered arrays of surface nanostructures with controllable size and morphology. To follow the Ar + ion sputtering effects on the AAO/InP surfaces, X-ray photoelectron spectroscopy (XPS) was used to determine the different surface species. In 4d and P 2p core level spectra were recorded on different InP(1 0 0) surfaces after ions bombardment. XPS results showed the presence of metallic indium on both smooth InP(1 0 0) and AAO/InP(1 0 0) surfaces. Finally, we showed that this experiment led to the formation of metallic In dropplets about 10 nm in diameter on nanoholes patterned InP surface while the as-received InP(1 0 0) surface generated metallic In about 60 nm in diameter.

  4. Bulk charges in eleven dimensions

    Science.gov (United States)

    Hawking, S. W.; Taylor-Robinson, M. M.

    1998-07-01

    Eleven dimensional supergravity has electric type currents arising from the Chern-Simon and anomaly terms in the action. However the bulk charge integrates to zero for asymptotically flat solutions with topological trivial spatial sections. We show that by relaxing the boundary conditions to generalisations of the ALE and ALF boundary conditions in four dimensions one can obtain static solutions with a bulk charge. Solutions involving anomaly terms preserve between 1/16 and 1/4 of the supersymmetries but Chern-Simons fluxes generally break all of the remaining supersymmetry. One can introduce membranes with the same sign of charge into these backgrounds. This raises the possibility that these generalized membranes might decay quantum mechanically to leave just a bulk distribution of charge. Alternatively and more probably, a bulk distribution of charge can decay into a collection of singly charged membranes. Dimensional reductions of these solutions lead to novel representations of extreme black holes in four dimensions with up to four charges. We discuss how the eleven-dimensional Kaluza-Klein monopole wrapped around a space with non-zero first Pontryagin class picks up an electric charge proportional to the Pontryagin number.

  5. Bulk viscosity and deflationary universes

    CERN Document Server

    Lima, J A S; Waga, I

    2007-01-01

    We analyze the conditions that make possible the description of entropy generation in the new inflationary model by means of a nearequilibrium process. We show that there are situations in which the bulk viscosity cannot describe particle production during the coherent field oscillations phase.

  6. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja;

    2009-01-01

    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise i...

  7. Polymerisationseigenschaften von Bulk-Fill Kompositen

    OpenAIRE

    Maier, Eva

    2015-01-01

    Hintergrund und Ziele: Untersuchung der Polymerisationseigenschaften von Bulk-Fill Kompositen bzgl. Konversionsrate (degree of conversion = DC), Vickers-Härte (HV), Polymerisationsschrumpfungsstress (PSS) und Polymerisationsvolumenschrumpfung (PVS) im Vergleich zu konventionellen Kompositen. Material und Methode: Untersucht wurden die Bulk-Fill Komposite Filtek Bulk Fill Flowable (FBF, 3M ESPE, Seefeld), Surefil Smart Dentin Replacement (SDR, Dentsply, Konstanz), Tetric EvoCeram Bulk Fill...

  8. Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer

    Science.gov (United States)

    Li, Shiyan; Zhou, Xuliang; Kong, Xiangting; Li, Mengke; Mi, Junping; Pan, Jiaoqing

    2016-04-01

    The catalyst-free metal organic vapor phase epitaxial growth of InP nanowires on silicon (001) substrate is investigated using selectively grown GaAs buffer layers in V-shaped trenches. A yield up to 70% of nanowires is self-aligned in uncommon directions under the optimized growth conditions. The evolution mechanism of self-aligned directions for nanowires is discussed and demonstrated. Using this growth method, we can achieve branched and direction switched InP nanowires by varying the V/III ratio in situ. The structure of the nanowires is characterized by scanning electron microscope and transmission electron microscopy measurements. The crystal structure of the InP nanowires is stacking-faults-free wurtzite with its c axis perpendicular to the nanowire axis.

  9. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  10. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  11. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  12. Nitridation of InP(1 0 0) substrates studied by XPS spectroscopy and electrical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Talbi, A. [Laboratoire de Microelectronique Appliquee Universite Djillali Liabes de Sidi Bel Abbes 22000 (Algeria)]. E-mail: talbi_a02@yahoo.fr; Benamara, Z. [Laboratoire de Microelectronique Appliquee Universite Djillali Liabes de Sidi Bel Abbes 22000 (Algeria); Akkal, B. [Laboratoire de Microelectronique Appliquee Universite Djillali Liabes de Sidi Bel Abbes 22000 (Algeria); Gruzza, B. [Laboratoire des Sciences des Materiaux Pour l' Electronique et d' Automatique, Universite Blaise Pascal de Clermont II, Les Cezeaux, 63177 Aubiere Cedex (France); Bideux, L. [Laboratoire des Sciences des Materiaux Pour l' Electronique et d' Automatique, Universite Blaise Pascal de Clermont II, Les Cezeaux, 63177 Aubiere Cedex (France); Robert, C. [Laboratoire des Sciences des Materiaux Pour l' Electronique et d' Automatique, Universite Blaise Pascal de Clermont II, Les Cezeaux, 63177 Aubiere Cedex (France); Varenne, C. [Laboratoire des Sciences des Materiaux Pour l' Electronique et d' Automatique, Universite Blaise Pascal de Clermont II, Les Cezeaux, 63177 Aubiere Cedex (France); Chami, N. [Laboratoire de Microelectronique Appliquee Universite Djillali Liabes de Sidi Bel Abbes 22000 (Algeria)

    2006-11-15

    The nitrides of group III metals as InN are very important materials in optoelectronic (light-emitting diodes and laser diodes) and microelectronic areas. It is essential for the realisation of such devices to grow high quality nitride single crystals. In this paper, the nitridation of InP(1 0 0) surfaces has been studied in situ using X-ray photoelectron spectroscopy (XPS). After ionic cleaning by Ar{sup +} ions, metallic indium crystallites are created and the nitridation of the substrates is performed using a plasma glow discharge cell reaction with these indium clusters. We used the In{sub 4d} and P{sub 2p} core levels to monitor the chemical state of the surface and the coverage of the present species. We observed the creation of InN and PN bonds while the In-In metallic bonds decrease. This confirms the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows us to assert that we have produced almost two monolayers of indium nitride. In order to determine the quality of the elaborated nitride films and the electrical properties of the InN/InP interface we have used the I(V) electrical method. Analysis of the measured characteristics at room temperature allows the determination of the electrical parameters. The saturation current I {sub s}, the ideality factor {eta}, and the serial resistance R {sub s} are evaluated to 1.92 x 10{sup -6} A, 3.07 and 375 {omega}, respectively. The barrier height is determined at room temperature and is equal to 0.547 eV.

  13. Coulombic Fluids Bulk and Interfaces

    CERN Document Server

    Freyland, Werner

    2011-01-01

    Ionic liquids have attracted considerable interest in recent years. In this book the bulk and interfacial physico-chemical characteristics of various fluid systems dominated by Coulomb interactions are treated which includes molten salts, ionic liquids as well as metal-molten salt mixtures and expanded fluid metals. Of particular interest is the comparison of the different systems. Topics in the bulk phase concern the microscopic structure, the phase behaviour and critical phenomena, and the metal-nonmetal transition. Interfacial phenomena include wetting transitions, electrowetting, surface freezing, and the electrified ionic liquid/ electrode interface. With regard to the latter 2D and 3D electrochemical phase formation of metals and semi-conductors on the nanometer scale is described for a number of selected examples. The basic concepts and various experimental methods are introduced making the book suitable for both graduate students and researchers interested in Coulombic fluids.

  14. Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method

    Science.gov (United States)

    Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2015-12-01

    Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

  15. 110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate

    OpenAIRE

    Masuda, Satoshi; Kira, Hidehiko; Hirose, Tatsuya

    2004-01-01

    A high-gain amplifier monolithic microwave integrated circuit (MMIC) was developed using InP HEMT technology with inverted microstrip lines. The six-stage amplifier demonstrated a gain of 30 dB at 110 GHz. We also fabricated a resin-sealed flip-chip MMIC on a highly isolated cost-effective glass-epoxy substrate, achieving a gain of 28 dB at 110 GHz. To the best of our knowledge, this is the highest gain in the W-band for a flip-chip MMIC sealed with resin.

  16. Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    International Nuclear Information System (INIS)

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 x 1017 cm-3 and 1 x 1018 cm-3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H2 and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  17. Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    In situ, real-time monitoring of InP atomic layer epitaxy (ALE) was performed in low-pressure metalorganic chemical vapor deposition (LP-MOCVD) by surface photoabsorption (SPA). A self-limiting adsorption condition was obtained from the trimethylindium (TMIn) decomposition experiment at various conditions. It was found that the growth rate was less than 1 monolayer (ML)/cycle. From the in situ, real-time SPA measurement during InP ALE, the incomplete PH sub 3 decomposition on the methyl-terminated In surface was attributed to the self-limiting submonolayer growth per cycle.

  18. Bulk metallic glass tube casting

    International Nuclear Information System (INIS)

    Research highlights: → Tubular specimens of Zr55Cu30Al10Ni5 cast in custom arc-melting furnace. → Tilt casting supplemented by suction casting. → Bulk metallic glass formed only with optimized processing parameters. → Fully amorphous tubes with 1.8 mm wall thickness and 25 mm diameter. - Abstract: Tubular bulk metallic glass specimens were produced, using a custom-built combined arc-melting tilt-casting furnace. Zr55Cu30Al10Ni5 tubes with outer diameter of 25 mm and 0.8-3 mm wall thicknesses were cast, with both tilt and suction casting to ensure mold filling. Tilt casting was found to fill one side of the tube mold first, with the rest of the tube circumference filled subsequently by suction casting. Optimized casting parameters were required to fully fill the mold and ensure glass formation. Too small melt mass and too low arc power filled the mold only partially. However, too large melt mass and higher arc power which lead to the best mold filling also lead to partial crystallization. Variations in processing parameters were explored, until a glassy ring with 1.8 mm thickness was produced. Different sections of the as-cast ring were investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC), and instrumented indentation to ensure amorphous microstructure. Atomic force microscopy (AFM) was used to compare the surface qualities of the first- and last-filled sections. These measurements confirmed the glassy structure of the cast ring, and that, the tilt cast tube section consistently showed better surface quality than the suction cast section. Optimized casting parameters are required to fully realize the potential of directly manufacturing complex shapes out of high-purity bulk metallic glasses by tilt casting.

  19. Bulk Moisture and Salinity Sensor

    Science.gov (United States)

    Nurge, Mark; Monje, Oscar; Prenger, Jessica; Catechis, John

    2013-01-01

    Measurement and feedback control of nutrient solutions in plant root zones is critical to the development of healthy plants in both terrestrial and reduced-gravity environments. In addition to the water content, the amount of fertilizer in the nutrient solution is important to plant health. This typically requires a separate set of sensors to accomplish. A combination bulk moisture and salinity sensor has been designed, built, and tested with different nutrient solutions in several substrates. The substrates include glass beads, a clay-like substrate, and a nutrient-enriched substrate with the presence of plant roots. By measuring two key parameters, the sensor is able to monitor both the volumetric water content and salinity of the nutrient solution in bulk media. Many commercially available moisture sensors are point sensors, making localized measurements over a small volume at the point of insertion. Consequently, they are more prone to suffer from interferences with air bubbles, contact area of media, and root growth. This makes it difficult to get an accurate representation of true moisture content and distribution in the bulk media. Additionally, a network of point sensors is required, increasing the cabling, data acquisition, and calibration requirements. measure the dielectric properties of a material in the annular space of the vessel. Because the pore water in the media often has high salinity, a method to measure the media moisture content and salinity simultaneously was devised. Characterization of the frequency response for capacitance and conductance across the electrodes was completed for 2-mm glass bead media, 1- to 2-mm Turface (a clay like media), and 1- to 2-mm fertilized Turface with the presence of root mass. These measurements were then used to find empirical relationships among capacitance (C), the dissipation factor (D), the volumetric water content, and the pore water salinity.

  20. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

    Science.gov (United States)

    Cavalli, Alessandro; Wang, Jia; Esmaeil Zadeh, Iman; Reimer, Michael E; Verheijen, Marcel A; Soini, Martin; Plissard, Sebastien R; Zwiller, Val; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-05-11

    Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth. PMID:27045232

  1. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S

    Energy Technology Data Exchange (ETDEWEB)

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si[sub Ga] shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  2. Giant corrugations in Bi2Se3 layers grown on high-index InP substrates

    Science.gov (United States)

    Takagaki, Y.; Jenichen, B.; Tominaga, J.

    2013-06-01

    Epitaxial growth of Bi2Se3 layers usually takes place in the (0001) orientation due to the stability of this surface terminated by the van der Waals bonds. Here, we show that the layers grown on InP(11n) substrates (n= 3, 4, and 5) are not (0001) oriented. The approximate lattice match at the heterointerface leads to an alignment between the [0001] direction of Bi2Se3 and the [111] direction of InP. The consequential tilt of the Bi2Se3(0001) plane with respect to the surface of the high-index substrates gives rise to a formation of giant corrugations consisting of the (0001) and (11¯00) facets. We demonstrate critical influences of the in-plane polarization and miscut of the substrates which emerge owing to the strong overlayer-substrate interaction in the semicoherent heteroepitaxy: Twin domains are eliminated and the layers are strained to the extent that the lattice symmetry is altered. We examine the Dirac band structure under strain using density functional calculations. The Dirac point shifts away from the Γ point and the spin degeneracy is lifted when the strain is in the Bi2Se3[11¯00] direction as the spatial inversion symmetry is removed.

  3. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    International Nuclear Information System (INIS)

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm−2 K−2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  4. Gold based bulk metallic glass

    OpenAIRE

    Schroers, Jan; Lohwongwatana, Boonrat; Johnson, William L.; Peker, Atakan

    2005-01-01

    Gold-based bulk metallic glass alloys based on Au-Cu-Si are introduced. The alloys exhibit a gold content comparable to 18-karat gold. They show very low liquidus temperature, large supercooled liquid region, and good processibility. The maximum casting thickness exceeds 5 mm in the best glassformer. Au49Ag5.5Pd2.3Cu26.9Si16.3 has a liquidus temperature of 644 K, a glass transition temperature of 401 K, and a supercooled liquid region of 58 K. The Vickers hardness of the alloys in this system...

  5. Iron - based bulk amorphous alloys

    Directory of Open Access Journals (Sweden)

    R. Babilas

    2010-07-01

    Full Text Available Purpose: The paper presents a structure characterization, thermal and soft magnetic properties analysis of Fe-based bulk amorphous materials in as-cast state and after crystallization process. In addition, the paper gives some brief review about achieving, formation and structure of bulk metallic glasses as a special group of amorphous materials.Design/methodology/approach: The studies were performed on Fe72B20Si4Nb4 metallic glass in form of ribbons and rods. The amorphous structure of tested samples was examined by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM methods. The thermal properties of the glassy samples were measured using differential thermal analysis (DTA and differential scanning calorimetry (DSC. The magnetic properties contained initial and maximum magnetic permeability, coercive force and magnetic after-effects measurements were determined by the Maxwell-Wien bridge and VSM methods.Findings: The X-ray diffraction and transmission electron microscopy investigations revealed that the studied as-cast bulk metallic glasses in form of ribbons and rods were amorphous. Two stage crystallization process was observed for studied bulk amorphous alloy. The differences of crystallization temperature between ribbons and rods with chosen thickness are probably caused by different amorphous structures as a result of the different cooling rates in casting process. The SEM images showed that studied fractures could be classified as mixed fractures with indicated two zones contained “river” and “smooth” areas. The changing of chosen soft magnetic properties (μr, Bs, Hc obtained for samples with different thickness is a result of the non-homogenous amorphous structure of tested metallic glasses. The annealing process in temperature range from 373 to 773 K causes structural relaxation of tested amorphous materials, which leads to changes in their physical properties. The qualitative

  6. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results.

    Science.gov (United States)

    Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro

    2014-05-16

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  7. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results

    International Nuclear Information System (INIS)

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In0.48Ga0.52P buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, k-vector ⋅ p-vector bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband k-vector ⋅ p-vector approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  8. Bulk dynamics for interfacial growth models

    OpenAIRE

    López, Cristóbal; Santos, Fernando; Garrido, P. L.

    2000-01-01

    We study the influence of the bulk dynamics of a growing cluster of particles on the properties of its interface. First, we define a general bulk growth model by means of a continuum Master equation for the evolution of the bulk density field. This general model just considers an arbitrary addition of particles (though it can be easily generalized to consider subtraction) with no other physical restriction. The corresponding Langevin equation for this bulk density field is derived where the i...

  9. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2013-01-01

    containing three time constants, that we interpret as the effects of fast carrier diffusion from an initially localized carrier distribution and the slower effects of surface recombination and bulk recombination. The variation of the time constants with parameters characterizing the nanocavity structure is...

  10. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1.

    Directory of Open Access Journals (Sweden)

    Sarah H Reeder

    2016-05-01

    Full Text Available Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures-openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores-the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them.

  11. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1.

    Science.gov (United States)

    Reeder, Sarah H; Lee, Byung Ha; Fox, Ronald; Dobritsa, Anna A

    2016-05-01

    Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures-openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores-the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them. PMID:27177036

  12. Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition

    International Nuclear Information System (INIS)

    The objective of this study is to investigate how the surface characteristics of indium phosphide (InP) can be modified through the use of atomic hydrogen (H*) cleaning and silicon interfacial control layers (Si ICL), prior to the deposition of MgO dielectric layers. X-ray photoelectron spectroscopy (XPS) analysis shows that the InP native oxide can be successfully removed using atomic hydrogen cleaning at a substrate temperature of 300 deg. C. However, atomic force microscopy (AFM) images display evidence for the growth of metallic In island features after H* cleaning, and subsequent deposition of MgO thin films on the H* cleaned surface resulted in high levels of interfacial indium oxide growth. It has also been shown that the deposition of thin (∼1 nm) Si layers on InP native oxide surfaces results in the transfer of oxygen from the InP substrate to the Si ICL and the formation of Si-InP bonds. XPS analysis indicates that MgO deposition and subsequent 500 deg. C annealing results in further oxidation of the Si layer. However, no evidence for the re-growth of interfacial In or P oxide species was observed, in contrast to observations on the H* cleaned surface.

  13. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Science.gov (United States)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  14. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1

    Science.gov (United States)

    Reeder, Sarah H.; Lee, Byung Ha; Fox, Ronald; Dobritsa, Anna A.

    2016-01-01

    Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures–openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores–the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them. PMID:27177036

  15. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.;

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  16. Handling of bulk solids theory and practice

    CERN Document Server

    Shamlou, P A

    1990-01-01

    Handling of Bulk Solids provides a comprehensive discussion of the field of solids flow and handling in the process industries. Presentation of the subject follows classical lines of separate discussions for each topic, so each chapter is self-contained and can be read on its own. Topics discussed include bulk solids flow and handling properties; pressure profiles in bulk solids storage vessels; the design of storage silos for reliable discharge of bulk materials; gravity flow of particulate materials from storage vessels; pneumatic transportation of bulk solids; and the hazards of solid-mater

  17. Gold based bulk metallic glass

    Science.gov (United States)

    Schroers, Jan; Lohwongwatana, Boonrat; Johnson, William L.; Peker, Atakan

    2005-08-01

    Gold-based bulk metallic glass alloys based on Au-Cu-Si are introduced. The alloys exhibit a gold content comparable to 18-karat gold. They show very low liquidus temperature, large supercooled liquid region, and good processibility. The maximum casting thickness exceeds 5mm in the best glassformer. Au49Ag5.5Pd2.3Cu26.9Si16.3 has a liquidus temperature of 644K, a glass transition temperature of 401K, and a supercooled liquid region of 58K. The Vickers hardness of the alloys in this system is ˜350Hv, twice that of conventional 18-karat crystalline gold alloys. This combination of properties makes the alloys attractive for many applications including electronic, medical, dental, surface coating, and jewelry.

  18. Gold based bulk metallic glass

    International Nuclear Information System (INIS)

    Gold-based bulk metallic glass alloys based on Au-Cu-Si are introduced. The alloys exhibit a gold content comparable to 18-karat gold. They show very low liquidus temperature, large supercooled liquid region, and good processibility. The maximum casting thickness exceeds 5 mm in the best glassformer. Au49Ag5.5Pd2.3Cu26.9Si16.3 has a liquidus temperature of 644 K, a glass transition temperature of 401 K, and a supercooled liquid region of 58 K. The Vickers hardness of the alloys in this system is ∼350 Hv, twice that of conventional 18-karat crystalline gold alloys. This combination of properties makes the alloys attractive for many applications including electronic, medical, dental, surface coating, and jewelry

  19. Bulk analysis using nuclear techniques

    International Nuclear Information System (INIS)

    Bulk analysis techniques developed for the mining industry are reviewed. Using penetrating neutron and #betta#-radiations, measurements are obtained directly from a large volume of sample (3-30 kg) #betta#-techniques were used to determine the grade of iron ore and to detect shale on conveyor belts. Thermal neutron irradiation was developed for the simultaneous determination of iron and aluminium in iron ore on a conveyor belt. Thermal-neutron activation analysis includes the determination of alumina in bauxite, and manganese and alumina in manganese ore. Fast neutron activation analysis is used to determine silicon in iron ores, and alumina and silica in bauxite. Fast and thermal neutron activation has been used to determine the soil in shredded sugar cane. (U.K.)

  20. Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects

    Czech Academy of Sciences Publication Activity Database

    Dubecký, F.; Ladzianský, M.; Kindl, Dobroslav; Nečas, V.

    Piscataway : IEEE, 2010 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 207-210 ISBN 978-1-4244-8572-7. [ASDAM 2010 - The Eight International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle (SK), 25.10.2010-27.10.2010] Institutional research plan: CEZ:AV0Z10100521 Keywords : SI GaAs detector s * neutron bombardment * deep levels * PICTS Subject RIV: BM - Solid Matter Physics ; Magnetism

  1. Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

    International Nuclear Information System (INIS)

    The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥104 V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2+) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0±0.6) x 10-14 cm2. (orig.)

  2. Secondary electron emission and self-consistent charge transport in semi-insulating samples

    Science.gov (United States)

    Fitting, H.-J.; Touzin, M.

    2011-08-01

    Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent "true" secondary electron emission rate δ(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges ρ(x,t), field F(x,t), and potential V(x,t) are obtained where V0 = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., σ = η + δ < 1.

  3. Secondary electron emission and self-consistent charge transport in semi-insulating samples

    International Nuclear Information System (INIS)

    Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent ''true'' secondary electron emission rate δ(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges ρ(x,t), field F(x,t), and potential V(x,t) are obtained where V0 = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., σ η + δ < 1.

  4. Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 107ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated

  5. Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch

    Institute of Scientific and Technical Information of China (English)

    施卫; 马湘蓉

    2011-01-01

    Unique experimental phenomena are discovered in a large gap semiinsulating(SI)GaAs photoconductive semiconductor switch(PCSS)and the peculiar transmission characteristics are exhibited in the experiment.The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS.By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS,a detailed statistical analysis and theoretical explanations are expounded.The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation(LSA)mode when the conditions of 5 × 104 s·cm-3 ≤ no/f ≤ 3 × 105 s.cm-3 and noL ≥ 1013 cm-2 must be met in the switch,with no being carrier concentration and f the frequency.The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in)behavior at high bias voltage,so the withstand voltage and service life for PCSS are improved.%Unique experimental phenomena are discovered in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch (PCSS) and the peculiar transmission characteristics are exhibited in the experiment. The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS. By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS, a detailed statistical analysis and theoretical explanations are expounded. The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation (LSA) mode when the conditions of 5 x 104 s-cm~3 1013 cm~2 must be met in the switch, with no being carrier concentration and f the frequency. The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in) behavior at high bias voltage, so the withstand voltage and service life for PCSS are improved.

  6. Isotopic signatures by bulk analyses

    International Nuclear Information System (INIS)

    Los Alamos National Laboratory has developed a series of measurement techniques for identification of nuclear signatures by analyzing bulk samples. Two specific applications for isotopic fingerprinting to identify the origin of anthropogenic radioactivity in bulk samples are presented. The first example is the analyses of environmental samples collected in the US Arctic to determine the impact of dumping of radionuclides in this polar region. Analyses of sediment and biota samples indicate that for the areas sampled the anthropogenic radionuclide content of sediments was predominantly the result of the deposition of global fallout. The anthropogenic radionuclide concentrations in fish, birds and mammals were very low. It can be surmised that marine food chains are presently not significantly affected. The second example is isotopic fingerprinting of water and sediment samples from the Rocky Flats Facility (RFP). The largest source of anthropogenic radioactivity presently affecting surface-waters at RFP is the sediments that are currently residing in the holding ponds. One gram of sediment from a holding pond contains approximately 50 times more plutonium than 1 liter of water from the pond. Essentially 100% of the uranium in Ponds A-1 and A-2 originated as depleted uranium. The largest source of radioactivity in the terminal Ponds A-4, B-5 and C-2 was naturally occurring uranium and its decay product radium. The uranium concentrations in the waters collected from the terminal ponds contained 0.05% or less of the interim standard calculated derived concentration guide for uranium in waters available to the public. All of the radioactivity observed in soil, sediment and water samples collected at RFP was naturally occurring, the result of processes at RFP or the result of global fallout. No extraneous anthropogenic alpha, beta or gamma activities were detected. The plutonium concentrations in Pond C-2 appear to vary seasonally

  7. Guidelines for Measuring Bulk Density of Soil

    International Nuclear Information System (INIS)

    Bulk density is defined as the dry weight of soil per unit volume of undisturbed soil. • Bulk density can be used to give an indication of the porosity and structure of the soil influencing O2 and H2O movement in the soil. • Soils with a bulk density higher than 1.6 g/cm3 may restrict root development. • Bulk density is also a measurement of the degree of compaction of the soil. • Bulk density increases with compaction and tends to increase with soil depth. • Sandy soils tend to have higher bulk density (1.4-1.5 g/cm3) than clay soils (1.2-1/3g/cm3). The measurement of soil bulk density is carried out by collecting undisturbed soil samples through inserting metal rings (with a known volume) into the soil, and determining the weight of the collected soil after drying

  8. Development of novel n{sup +}-in-p Silicon Planar Pixel Sensors for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Unno, Y., E-mail: yoshinobu.unno@kek.jp [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Gallrapp, C. [European Organization for Nuclear Research (CERN), CH-1211, Geneve 23 (Switzerland); Hori, R. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Idarraga, J. [Institut Universitaire de Technologie d' Orsay, Universite de Paris Sud, plateau de Moulon, 91400 Orsay (France); Mitsui, S. [The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Nagai, R.; Kishida, T. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Ishida, A.; Ishihara, M.; Kamada, S.; Inuzuka, T.; Yamamura, K. [Solid-State Division, Hamamatsu Photonics K.K., 1126-1 Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Hara, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Ikegami, Y. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Lounis, A. [Institut Universitaire de Technologie d' Orsay, Universite de Paris Sud, plateau de Moulon, 91400 Orsay (France); Takahashi, Y. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Takubo, Y.; Terada, S. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801 (Japan); Hanagaki, K. [Department of Physics, Osaka University, Machikaneyama-cho, Toyonaka-shi, Osaka 560-0043 (Japan); and others

    2013-01-21

    We have been developing highly radiation-tolerant n{sup +}-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n{sup +}-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses (320μm or 150μm). The 1-chip pixel modules with thin FE-I4 pixel sensors were evaluated using test beams, before and after 2×10{sup 15}n{sub eq}/cm{sup 2} irradiation. The full depletion voltages were estimated to be 44±10 V and 380±70 V, in the non-irradiated and the irradiated modules, respectively. A reduction of efficiency was observed in the vicinity of the four pixel corners and underneath the bias rail after the irradiation. The global efficiencies were >99% and >95% in the non-irradiated and the irradiated modules, respectively. The collected charges were uniform in the depth direction at bias voltages well above the full depletion voltages. The encapsulation of vulnerable edges with adhesive or parylene prevented HV sparking. Bump bonding with the SnAg solder bumps was performed at HPK with 150μm- and 320μm-thick sensors and chips. No disconnection of bumps was observed after 10 thermal cycles between −40 and +50 °C, with a temperature slew rate of >70K/min. -- Highlights: ► Novel n{sup +}-in-p pixel sensors were made of punch-through/poly-Si biasing, p-stop/p-spray isolation, and 320/150μm thickness. ► The thin pixel modules were evaluated in testbeams, before and after 2×10{sup 15}n{sub eq}/cm{sup 2} irradiation. ► A reduction of efficiency was observed in the vicinity of four-corners of pixels and underneath the bias rail after irradiation. ► Encapsulating the vulnerable edges with adhesive or parylene achieved prevention of HV sparking up to 1000 V. ► No disconnection of SnAg bump-bonds was observed in dummy modules after 10 thermal cycles with a slew rate of >70K/min.

  9. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  10. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect

    Institute of Scientific and Technical Information of China (English)

    GE Ji; JIN Zhi; SU Yong-Bo; CHENG Wei; WANG Xian-Wai; CHEN Gao-Peng; LIU Xin-Yu

    2009-01-01

    We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As a result, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.

  11. Many-body pseudopotential theory of excitons in InP and CdSe quantum dots

    International Nuclear Information System (INIS)

    We present a pseudopotential approach to the calculation of the excitonic spectrum of semiconductor quantum dots. Starting from a many-body expansion of the exciton wave functions in terms of single-substitution Slater determinants constructed from pseudopotential single-particle wave functions, our method permits an accurate and detailed treatment of the intraconfiguration electron-hole Coulomb and exchange interactions, while correlation effects can be included in a controlled fashion by allowing interconfiguration coupling. We calculate the exciton fine structure of InP and CdSe nanocrystals in the strong-confinement regime. We find a different size dependence for the electron-hole exchange interaction than previously assumed (i.e., R-2 instead of R-3). Our calculated exciton fine structure is compared with recent experimental results obtained by size-selective optical spectroscopies. copyright 1999 The American Physical Society

  12. Study of electric field effect on the carrier captures rates of deep trap in p-type InP

    International Nuclear Information System (INIS)

    The electric field effect on the carrier capture cross section of deep trap has been studied. The experimental results of the H4F and H5 hole traps in p-type InP show an enhancement of the capture cross section with the increase of the applied electric field. This enhancement depends on the nature of the deep traps. Increasing the electric field from 8x106 to 2.4 x 107 V/m leads to an increase of the capture cross section of the H4F trap by a factor of 3 to 4 and of the H5 by a factor 4 to 5. A theoretical model has been suggested to explain the electric field effect on the capture cross section. This model deals with the cascade and multi-phonon processes semi-classically. (author)

  13. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jandl, Adam, E-mail: jandl@mit.edu; Bulsara, Mayank T.; Fitzgerald, Eugene A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave. Cambridge, Massachusetts 02139 (United States)

    2014-04-21

    The properties of InAs{sub x}P{sub 1−x} compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10{sup 6}/cm{sup 2}) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 10{sup 5} cm{sup −2} for films graded from the InP lattice constant to InAs{sub 0.15}P{sub 0.85}. A model for a two-energy level dislocation nucleation system is proposed based on our results.

  14. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

    Science.gov (United States)

    Jandl, Adam; Bulsara, Mayank T.; Fitzgerald, Eugene A.

    2014-04-01

    The properties of InAsxP1-x compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ɛ/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>106/cm2) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 105 cm-2 for films graded from the InP lattice constant to InAs0.15P0.85. A model for a two-energy level dislocation nucleation system is proposed based on our results.

  15. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    International Nuclear Information System (INIS)

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In0.48Ga0.52 P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k→·p→ bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots

  16. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    Energy Technology Data Exchange (ETDEWEB)

    Barettin, Daniele, E-mail: Daniele.Barettin@uniroma2.it; Auf der Maur, Matthias [Department of Electronic Engineering, University of Rome “Tor Vergata,” Via del Politecnico 1, 00133, Rome (Italy); De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro [Department of Industrial Engineering, University of Rome Tor Vergata, Via del Politecnico 1 00133 Rome, Italy and INSTM, Unitá di ricerca dell' Universitá di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133, Rome (Italy); Pecchia, Alessandro [CNR-ISMN, via Salaria Km. 29.300, 00017 Monterotondo, Rome (Italy)

    2015-03-07

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

  17. Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

    Science.gov (United States)

    Malina, V.; Moro, L.; Micheli, V.; Mojzes, I.

    1996-07-01

    An attempt has been made to improve the electrical and metallurgical stability of Au - Be alloyed contacts to moderately doped p-type InP by minimizing the thickness of the Au - Be contact layer and using an Ru layer as a new, more effective diffusion barrier between the Au - Be and a thick Au top layer. It was found that the Au - Be contact layer only 40 - 50 nm thick is sufficient to give excellent ohmic contacts with specific contact resistance values as low as 0268-1242/11/7/025/img6 and 0268-1242/11/7/025/img7 (for 0268-1242/11/7/025/img8 and 0268-1242/11/7/025/img9 respectively). When subjected to an aging test at 0268-1242/11/7/025/img10 for 50 h in 0268-1242/11/7/025/img11 gas, the 50 nm Au - Be/50 nm Ru/300 nm Au contacts alloyed at an optimum temperature of about 0268-1242/11/7/025/img12 exhibit good thermal stability and no substantial increase in the specific contact resistance. The remarkable metallurgical stability of such contacts was confirmed by secondary neutral mass spectroscopy (SNMS) in-depth profile measurements. A comparison with the previously investigated diffusion barrier metals (such as Cr, Ti, Pt, etc) shows that the Ru layer is a much better barrier against the migration of Au into the InP substrate and, at the same time, it suppresses the out-diffusion of In and P from the semiconductor.

  18. Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

    International Nuclear Information System (INIS)

    This work reports the first InP solar cells, InP/In0.53Ga0.47As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

  19. Relative entropy equals bulk relative entropy

    CERN Document Server

    Jafferis, Daniel L; Maldacena, Juan; Suh, S Josephine

    2015-01-01

    We consider the gravity dual of the modular Hamiltonian associated to a general subregion of a boundary theory. We use it to argue that the relative entropy of nearby states is given by the relative entropy in the bulk, to leading order in the bulk gravitational coupling. We also argue that the boundary modular flow is dual to the bulk modular flow in the entanglement wedge, with implications for entanglement wedge reconstruction.

  20. Coupling brane fields to bulk supergravity

    International Nuclear Information System (INIS)

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  1. Coupling brane fields to bulk supergravity

    Energy Technology Data Exchange (ETDEWEB)

    Parameswaran, Susha L. [Uppsala Univ. (Sweden). Theoretical Physics; Schmidt, Jonas [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2010-12-15

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  2. Bulk scalar field in DGP braneworld cosmology

    CERN Document Server

    Ansari, Rizwan ul Haq

    2007-01-01

    We investigated the effects of bulk scalar field in the braneworld cosmological scenario. The Friedmann equations and acceleration condition in presence of the bulk scalar field for a zero tension brane and cosmological constant are studied. In DGP model the effective Einstein equation on the brane is obtained with bulk scalar field. The rescaled bulk scalar field on the brane in the DGP model behaves as an effective four dimensional field, thus standard type cosmology is recovered. In present study of the DGP model, the late-time accelerating phase of the universe can be explained .

  3. 27 CFR 20.191 - Bulk articles.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of...

  4. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  5. Calculated performance of p(+)n InP solar cells with In(0.52)Al(0.48)As window layers

    Science.gov (United States)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    The performance of indium phosphide solar cells with lattice matched wide band-gap In(0.52)Al(0.48)As window layers was calculated using the PC-1D computer code. The conversion efficiency of p(+)n InP solar cells is improved significantly by the window layer. No improvement is seen for n(+)p structures. The improvement in InP cell efficiency was studied as a function of In(0.52)Al(0.48)As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current.For a typical In(0.52)Al(0.48)As window layer thickness of 20 nm, the cell efficiency improves in excess of 27 percent to a value of 18.74 percent.

  6. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    Science.gov (United States)

    Massarani, B.; Awad, F. G.; Kaaka, M.; Darwich, R.

    1998-12-01

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped InP has been studied as a function of pulse duration (tp) before and after annealing. Our results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4F) and the other is a slow trap (labeled H4S). This is shown through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in the P sublattice.

  7. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    International Nuclear Information System (INIS)

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (tp) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4f) and the other is a show trap (labeled H4s). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

  8. 1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy

    International Nuclear Information System (INIS)

    Position and distribution control of 1.55-μm InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The arrangement of the {103}, {115}, and (100) facets on the pyramid top surface is governed by the shape of the pyramid base and top surface area. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. With shrinking QD number upon reduced top surface area, sharp emission from single QDs is observed at 1.55 μm. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-μm telecom wavelength region and their implementation in photonic integrated circuits.

  9. Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

    Energy Technology Data Exchange (ETDEWEB)

    Hajlaoui, C., E-mail: hajlaouic@yahoo.fr; Pedesseau, L. [Université Européenne de Bretagne (France); Raouafi, F.; Ben Cheikh Larbi, F. [Université de Carthage, Laboratoire de Physico-Chimie, des Microstructures et des Microsystémes, Institut Préparatoire aux Études Scientifiques et Techniques (Tunisia); Even, J.; Jancu, J.-M. [Université Européenne de Bretagne (France)

    2015-08-15

    We report first-principle density functional calculations of the spontaneous polarization, piezoelectric stress constants, and elastic constants for the III–V wurtzite structure semiconductors InAs and InP. Using the density functional theory implemented in the VASP code, we obtain polarization values–0.011 and–0.013 C/m{sup 2}, and piezoelectric constants e{sub 33} (e{sub 31}) equal to 0.091 (–0.026) and 0.012 (–0.081) C/m{sup 2} for structurally relaxed InP and InAs respectively. These values are consistently smaller than those of nitrides. Therefore, we predict a smaller built-in electric field in such structures.

  10. Multiple-Scattering of Near-Edge x-ray Absorption Fine Structure of Sulphur-Passivated InP(100) Surface

    Institute of Scientific and Technical Information of China (English)

    曹松; 唐景昌; 沈少来; 陈更生; 马丹

    2003-01-01

    We use the multiple-scattering cluster method to calculate the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 A and 3.05 A coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

  11. Bulk equations of motion from CFT correlators

    CERN Document Server

    Kabat, Daniel

    2015-01-01

    To O(1/N) we derive, purely from CFT data, the bulk equations of motion for interacting scalar fields and for scalars coupled to gauge fields and gravity. We first uplift CFT operators to mimic local AdS fields by imposing bulk microcausality. This requires adding an infinite tower of smeared higher-dimension double-trace operators to the CFT definition of a bulk field, with coefficients that we explicitly compute. By summing the contribution of the higher-dimension operators we derive the equations of motion satisfied by these uplifted CFT operators and show that we precisely recover the expected bulk equations of motion. We exhibit the freedom in the CFT construction which corresponds to bulk field redefinitions.

  12. The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP

    Directory of Open Access Journals (Sweden)

    Jean C Harmand

    2008-08-01

    Full Text Available The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.

  13. Experimental determination of the hole capture kinetics of H4F deep trap in electron-irradiated highly doped p-type InP

    International Nuclear Information System (INIS)

    The hole capture kinetics of the main trap H4F in electron-irradiated p-type InP has been investigated by experimentally determining the exponential and nonexponential parts. The contribution of the slow part of the total kinetics is about 30% in our samples. An indication to a possible capture rate enhancement due to the electric field in the space-charge region is pointed out

  14. Experimental determination of the hole capture kinetics of H4F deep trap in electron-irradiated highly doped p-type InP

    Science.gov (United States)

    Darwich, R.; Massarani, B.

    2004-07-01

    The hole capture kinetics of the main trap H4F in electron-irradiated p-type InP has been investigated by experimentally determining the exponential and nonexponential parts. The contribution of the slow part of the total kinetics is about 30% in our samples. An indication to a possible capture rate enhancement due to the electric field in the space-charge region is pointed out.

  15. Surface and interface analysis of epitaxially grown Au film on InP(001) crystal by means of LEED/AES/RBS-channeling techniques

    International Nuclear Information System (INIS)

    Atomic arrangements at the surface and interface of the Au film epitaxially grown on the p(2 x 4) surface of the InP(001) crystal only by room temperature deposition have been studied in-situ by means of RBS-channeling technique. The epitaxially grown Au film of 20 A in thickness has shown a clear LEED pattern of p(1 x 1) spots which correspond to c(2 x 2) spots for the Au(001) face. The RBS-channeling measurement along the direction of the InP substrate has shown that the average minimum yield for the Au film is 32.5 % and that the yield of In surface peak is 3.0 atoms/row, which is a little enhanced in comparison with that, 2.7 atoms/row for the as-cleaned InP(001)-p(2 x 4) surface. The minimum yield of 32.5 % for the Au film is well explained in terms of lateral displacement by 0.18 A of a pair of Au atoms in a c(2 x 2) unit cell at the surface producing the reconstructed structure. The enhance In surface peak yield indicates that the atomic rows in the Au single crystal film do not shadow the In atomic rows as well as the P rows in the InP substrate. It is shown from the enhancement that the In atomic rows are situated within the radius of 0.72 A around the center of the channel of the Au lattice. (author)

  16. Tumor Protein p53-Induced Nuclear Protein 1 (TP53INP1 in Spontaneous Chronic Pancreatitis in the WBN/Kob Rat: Drug Effects on Its Expression in the Pancreas

    Directory of Open Access Journals (Sweden)

    Sawabu N

    2004-07-01

    Full Text Available CONTEXT: The tumor protein p53-induced nuclear protein 1 (TP53INP1 gene was found using DNA microarray technology as an overexpressed gene in acute pancreatitis. However, expression of TP53INP1 in chronic pancreatitis has not been previously reported. OBJECTIVE: This study investigated TP53INP1 gene expression and its relationship with p53 and apoptosis in spontaneous chronic pancreatitis in the Wistar-Bonn/Kobori rat. METHODS: Ninety four-week-old male Wistar-Bonn/Kobori rats were fed a special breeding diet until sacrifice. Camostat mesilate (n=30 or a herbal medicine (Saiko-keishi-to; n=30 were mixed with the diet, while the other 30 rats were untreated. The rats were sacrificed every 4 weeks for 20 weeks, and the pancreas was examined. In addition, 6 four-week-old male Wistar-Bonn/Kobori rats were sacrificed and studied as starting reference. Finally, Wistar rats (n=36 were studied as controls. MAIN OUTCOME MEASURE: TP53INP1 mRNA expression was determined by reverse transcription-polymerase chain reaction using semi-quantitative analysis, direct sequencing and in situ hybridization. RESULTS: TP53INP1 mRNA was strongly expressed at 12 weeks when chronic pancreatitis developed, with a second peak at 20 weeks. The expression kinetics of TP53INP1 mRNA paralleled acinar cell apoptosis assessed by terminal deoxynucleotidyl transferase-mediated dUTP nick end labeling. The p53 mRNA expression showed a single peak at 12 weeks. In situ hybridization revealed that TP53INP1 mRNA was expressed mainly in acinar cells. Therapeutic drugs such as camostat mesilate and a herbal medicine Saiko-keishi-to suppressed the TP53INP1 mRNA expression. TP53INP1 mRNA induction in acinar cells was confirmed with in vitro experiments using an arginine-induced rat pancreatic acinar AR4-2J cell injury model. CONCLUSIONS: TP53INP1 expression may reflect the acute-phase response and apoptosis of acinar cells in the course of chronic pancreatitis.

  17. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    Science.gov (United States)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  18. Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

    Science.gov (United States)

    Fu, Dong; Liu, Jietao; Song, Jiakun; Yu, Hailong; Zhang, Zuyin; Wang, Wenbo; Xu, Yun; Song, Guofeng; Wei, Xin

    2016-03-01

    High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In0.53Ga0.47As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency is as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.

  19. Effect of irradiation with reactor neutrons and the temperature of subsequent heat treatment on the structure of InP single crystals

    International Nuclear Information System (INIS)

    The results of studying the features of the effect of irradiation with fast and full-spectrum reactor neutrons and subsequent heat treatments on the structural characteristics of InP single crystals are reported. It is shown that, in contrast to other III-V semiconductor compounds, the lattice constant decreases in InP as a result of irradiation with neutrons. Fast neutrons make the major contribution to the variation in the lattice constant. The presence of the component of thermal neutrons that give rise to Sn atoms in the material does not bring about any appreciable variation in the lattice constant. Heat treatment of irradiated samples at temperatures as high as 600 deg. C leads to annealing of radiation defects and recovery of the lattice constant; in the samples irradiated with high neutron fluences, the lattice constant becomes even larger than that before irradiation. An analysis of the obtained experimental data made it possible to assume that the decrease in the InP lattice constant as a result of irradiation with neutrons is mainly caused by the introduction of the PIn antisite defects that give rise to an effect similar to that of vacancy-related defects

  20. Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    A Cl2-HBr-O2/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiOx passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl2-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl2-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl2-based ICP etching for the recovery of the InP material.

  1. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

    Directory of Open Access Journals (Sweden)

    Kaiyu Cui

    2013-02-01

    Full Text Available Double-slot photonic crystal waveguide (PCW in InP heterostructure is fabricated by inductively coupled plasma (ICP etching. Due to using an ultra-low pressure of 0.05 Pa, etch depths up to 3.5 μm for holes with diameter of 200 nm and 1.8 μm for slots of ∼40 nm are achieved, which indicate a record-high aspect-ratio, i.e. 45, for such narrow slots in InP heterostructure. Moreover, etching quality is evaluated based on both the transmission performance and the linewidth of micro-photoluminescence (μ-PL. In our measurement, a structure-dependent transmission-dip about 17 dB is obtained from a 17-μm-long W3 PCW, and a PL widening as small as 19 nm compared to the corresponding wafer is observed. These promising experimental results evidence the high etching quality realized in this work and confirm the feasibility of etching small-feature-size patterns by ICP technology for InP based devices in future mono-/hetero-integrated photonic circuits.

  2. Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

    Science.gov (United States)

    Hu, P. P.; Liu, J.; Zhang, S. X.; Maaz, K.; Zeng, J.; Guo, H.; Zhai, P. F.; Duan, J. L.; Sun, Y. M.; Hou, M. D.

    2016-04-01

    InP crystals and GaN films were irradiated by swift heavy ions 86Kr and 209Bi with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 × 1010 to 3.6 × 1012 ions/cm2. The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F2(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm-1 induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E2(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm-1 induced by 760 MeV Bi ion irradiation at ion fluence of 1 × 1012 ions/cm2. The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work.

  3. Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film

    Energy Technology Data Exchange (ETDEWEB)

    John Klopf

    2005-10-31

    Advancements in microfabrication techniques and thin film growth have led to complex integrated photonic devices, also known as optoelectronics. The performance of these devices relies upon precise control of the band gap and optical characteristics of the thin film structures, as well as a fundamental understanding of the photoexcited carrier thermalization, relaxation, and recombination processes. An optical pump-probe technique has been developed to measure the transient behavior of these processes on a sub-picosecond timescale. This method relies upon the generation of hot carriers by theabsorption of an intense ultrashort laser pulse (~ 135 fs). The transient changes in reflectance due to the pump pulse excitation are monitored using a weaker probe pulse. Control of the relative time delay between the pump and probe pulses allows for temporal measurements with resolution limited only by the pulse width. The transient change in reflectance is the result of a transient change in the carrier distribution. Observation of the reflectance response of indium phosphide (InP) and gallium arsenide (GaAs) films on a sub-picosecond timescale allows for detailed examination of thermalization and relaxation processes of the excited carriers. Longer timescales (> 100 ps) are useful for correlating the transient reflectance response to slower processes such as the diffusion and recombination of the photoexcited carriers. This research investigates the transient hot carrier processes in several InP and GaAs based films similar to those commonly used in optoelectronics. This technique is especially important as it provides a non-destructive means of evaluating these materials; whereas much of the research performed in this field has relied upon the measurement of transient changes in the transmission of transparent films. The process of preparing films that are transparent renders them unusable in functioning devices. This research should not only extend the understanding of

  4. Bulk Viscosity in Holographic Lifshitz Hydrodynamics

    CERN Document Server

    Hoyos, Carlos; Oz, Yaron

    2013-01-01

    We compute the bulk viscosity in holographic models dual to theories with Lifshitz scaling and/or hyperscaling violation, using a generalization of the bulk viscosity formula derived in arXiv:1103.1657 from the null focusing equation. We find that only a class of models with massive vector fields are truly Lifshitz scale invariant, and have a vanishing bulk viscosity. For other holographic models with scalars and/or massless vector fields we find a universal formula in terms of the dynamical exponent and the hyperscaling violation exponent.

  5. Bulk viscosity in holographic Lifshitz hydrodynamics

    OpenAIRE

    Carlos Hoyos; Bom Soo Kim; Yaron Oz

    2014-01-01

    We compute the bulk viscosity in holographic models dual to theories with Lifshitz scaling and/or hyperscaling violation, using a generalization of the bulk viscosity formula derived in arXiv:1103.1657 from the null focusing equation. We find that only a class of models with massive vector fields are truly Lifshitz scale invariant, and have a vanishing bulk viscosity. For other holographic models with scalars and/or massless vector fields we find a universal formula in terms of the dynamical ...

  6. Bulk viscosity in holographic Lifshitz hydrodynamics

    International Nuclear Information System (INIS)

    We compute the bulk viscosity in holographic models dual to theories with Lifshitz scaling and/or hyperscaling violation, using a generalization of the bulk viscosity formula derived in arXiv:1103.1657 from the null focusing equation. We find that only a class of models with massive vector fields are truly Lifshitz scale invariant, and have a vanishing bulk viscosity. For other holographic models with scalars and/or massless vector fields we find a universal formula in terms of the dynamical exponent and the hyperscaling violation exponent

  7. Bulk viscosity of hot and dense hadrons

    International Nuclear Information System (INIS)

    The bulk viscosity of hot and dense hadrons has been estimated within the framework of hadronic resonance gas model. We observe that the bulk viscosity to entropy ratio increases faster with temperature for higher μB. The magnitude of ζ is more at high μB. This results will have crucial importance for fire-ball produced at low energy nuclear collisions (FAIR, NICA). We note that the bulk to shear viscosity ratio remains above the bound set by AdS/CFT

  8. Technical specifications for the bulk shielding reactor

    International Nuclear Information System (INIS)

    This report provides information concerning the technical specifications for the Bulk Shielding Reactor. Areas covered include: safety limits and limiting safety settings; limiting conditions for operation; surveillance requirements; design features; administrative controls; and monitoring of airborne effluents. 10 refs

  9. The bulk radio expansion of Cassiopeia A

    International Nuclear Information System (INIS)

    Comparison, in the visibility plane, or radio observations of Cassiopeia A made at 151 MHz over a 2.3 yr interval indicates that the bulk of the radio emitting material has not been decelerated strongly

  10. Faecal bulking efficacy of Australasian breakfast cereals.

    Science.gov (United States)

    Monro, John A

    2002-01-01

    Faecal bulk may play an important role in preventing a range of disorders of the large bowel, but as yet there is little information available on the relative faecal bulking capacities of various foods. Breakfast cereals are often promoted as a good source of potential bulk for 'inner health' because they provide dietary fibre, but their relative abilities to provide faecal bulk per se have not been described. The faecal bulking efficacy of 28 representative Australasian breakfast cereals was therefore measured. A rat model developed for the purpose, and shown to give similar responses as humans to cereal fibres, was used to measure faecal bulking efficacy as increases in fully hydrated faecal weight/100 g diet, based on precise measurements of food intake, faecal dry matter output and faecal water-holding capacity (g water held without stress/g faecal dry matter). Compared to a baseline diet containing 50% sucrose, increments in hydrated faecal weight due to 50% breakfast cereal ranged from slightly negative (Cornflakes, -2 g/100 g diet) to about 80 g/100 g diet (San Bran). Most breakfast cereals increased hydrated faecal weight by between 10 and 20 g/100 g diet from a baseline of 21 +/- 1.5 g/100 g diet, but four products containing high levels of wheat bran had an exceptionally large impact on hydrated faecal weight (increment > 20 g/100 g diet), and the changes resulted more from relative changes in dry matter output than in faecal water retention/gram. However, as faecal water retention was about 2.5 g water/g faecal dry matter on average, increases in dry matter represented large increases in faecal water load. Faecal bulking indices (FBI) for most of the breakfast cereals were less than 20 (wheat bran = 100). The content of wheat bran equivalents for faecal bulk (WBE(fb)) in the breakfast cereals was calculated from FBI. Most breakfast cereals contributed, per serve, less than 10% of a theoretical daily reference value for faecal bulk (DRV(fb) = 63 WBE

  11. PHONON ECHOES IN BULK AND POWDERED MATERIALS

    OpenAIRE

    Kajimura, K.

    1981-01-01

    Experimental and theoretical studies of phonon echoes in bulk and powdered materials are reviewed. Phonon echoes have been observed in many materials such as bulk piezoelectric crystals, paramagnets, glasses, doped semiconductors, and piezoelectric, magnetic, and metallic powders, etc. The echoes arise from a time reversal of the phase, like spin echoes, of a primary pulsed acoustic excitation due to a second acoustic or rf pulse. The phase reversal occurs through the nonlinear interactions o...

  12. Orbital magnetization in insulators: Bulk versus surface

    Science.gov (United States)

    Bianco, Raffaello; Resta, Raffaele

    2016-05-01

    The orbital magnetic moment of a finite piece of matter is expressed in terms of the one-body density matrix as a simple trace. We address a macroscopic system, insulating in the bulk, and we show that its orbital moment is the sum of a bulk term and a surface term, both extensive. The latter only occurs when the transverse conductivity is nonzero and it is due to conducting surface states. Simulations on a model Hamiltonian validate our theory.

  13. An intrinsic mobility ceiling of Si bulk

    OpenAIRE

    Garcia-Castello, Nuria; Prades, Joan Daniel; Cirera, Albert

    2011-01-01

    We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\\cdot10^6 cm^2/V\\cdot s$. We suggest that this result is related to the lowest effective mass of the $$ direction.

  14. Impact of Pr on the properties of InP based layers for light sources and detectors

    Energy Technology Data Exchange (ETDEWEB)

    Prochazkova, Olga; Grym, Jan; Zavadil, Jiri; Zdansky, Karel; Yatskiv, Roman [Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Prague (Czech Republic)

    2009-12-15

    We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10{sup 14} cm{sup -3}. Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using {alpha}-particles emitted from the {sup 241}Am radioactive source. The type III structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. Pr admixture was also exploited in the preparation of quaternary GaInAsP(Pr) active region in the double heterostructure GaInAsP/InP emitting at 1200 nm. Purification effect of Pr addition is demonstrated by measuring impurity concentrations deduced from C-V curves and by low temperature PL spectra. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Readout circuitry for continuous high-rate photon detection with arrays of InP Geiger-mode avalanche photodiodes

    Science.gov (United States)

    Frechette, Jonathan; Grossmann, Peter J.; Busacker, David E.; Jordy, George J.; Duerr, Erik K.; McIntosh, K. Alexander; Oakley, Douglas C.; Bailey, Robert J.; Ruff, Albert C.; Brattain, Michael A.; Funk, Joseph E.; MacDonald, Jason G.; Verghese, Simon

    2012-06-01

    An asynchronous readout integrated circuit (ROIC) has been developed for hybridization to a 32x32 array of single-photon sensitive avalanche photodiodes (APDs). The asynchronous ROIC is capable of simultaneous detection and readout of photon times of arrival, with no array blind time. Each pixel in the array is independently operated by a finite state machine that actively quenches an APD upon a photon detection event, and re-biases the device into Geiger mode after a programmable hold-off time. While an individual APD is in hold-off mode, other elements in the array are biased and available to detect photons. This approach enables high pixel refresh frequency (PRF), making the device suitable for applications including optical communications and frequency-agile ladar. A built-in electronic shutter that de-biases the whole array allows the detector to operate in a gated mode or allows for detection to be temporarily disabled. On-chip data reduction reduces the high bandwidth requirements of simultaneous detection and readout. Additional features include programmable single-pixel disable, region of interest processing, and programmable output data rates. State-based on-chip clock gating reduces overall power draw. ROIC operation has been demonstrated with hybridized InP APDs sensitive to 1.06-μm and 1.55-μm wavelength, and fully packaged focal plane arrays (FPAs) have been assembled and characterized.

  16. Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

    International Nuclear Information System (INIS)

    The characteristics of InAs self-assembled quantum dots (QDs) grown on InAlAs/InP (0 0 1) have been investigated by capacitance–voltage (C–V) measurements and deep-level transient spectroscopy (DLTS). The depth profile of the apparent electron concentration obtained by C–V measurements shows significant carrier accumulation around the position of the InAs QDs plane. In addition to the D1–D5 traps, which are commonly detected in InAlAs layers grown on InP by molecular beam epitaxy (MBE), DLTS investigations show three InAs-related levels located at about 76, 202 and 246 meV below the InAlAs conduction band edge. The applied field is found to significantly enhance tunnel emission processes as seen in the broadening of the peaks with increasing reverse bias. The results suggest that defects in the material barrier can enhance electron tunnelling through barriers

  17. Atomic geometry, electronic states and possible hydrogen passivation of the InP(1 1 1)A surface

    Science.gov (United States)

    Chuasiripattana, K.; Srivastava, G. P.

    2006-08-01

    We present a first-principles theoretical study of the atomic geometry and electronics states of the InP(1 1 1)A surface under In- and P-rich conditions. The In-rich surface, characterised by an In vacancy per unit ( 2×2) cell, obeys the electron counting rule (ECR) and is semiconducting. Under P-rich conditions we have considered two surface reconstructions: ( 2×2) with 3/4 monolayer (ML) P coverage and ( √{3}×√{3}) with 1 ML coverage. In complete agreement with a recent experimental work by Li et al., it is found that the ( √{3}×√{3}) reconstruction is more stable than the ( 2×2) reconstruction. However, the ( √{3}×√{3}) reconstruction has a metallic band structure and thus does not satisfy the ECR. The stability of this reconstruction is explained to arise from a competition between the ECR and a significant elastic deformation in the surface region. We confirm the suggestion by Li et al. that this surface can be passivated both chemically as well as electronically with 1/4 ML coverage of hydrogen.

  18. P-H bonds in the reconstruction of P-rich InP(100) measured with FTIR

    Science.gov (United States)

    Letzig, T.; Willig, F.

    2006-08-01

    The reconstruction of P-rich InP(100) requires at least a (2x4) surface unit cell to stay semiconducting and uncharged (electron counting rule). Recently it has been shown that the much smaller (2x2) unit cell obtained from MOCVD (metalorganic vapor deposition) growth contains P-H bonds. Orientation and polarization dependent Fourier Transform Infrared Spectroscopy (FTIR) of the P-H bonds in the Attenuated Total Reflection (ATR) mode have confirmed the specific form of the (2x2) surface unit cell (T. Letzig et al., Phys. Rev. B 71 (2005) 033308) earlier proposed by W.G. Schmidt and coworkers (W.G. Schmidt et al., Phys. Rev. Lett. 90 (2003) 126101). Surface unit cells with a higher concentration of P-H bonds also obey the electron counting rule. A c(2x2) LEED image and two matching FTIR peaks were observed when the (2x2) reconstructed surface was exposed to atomic hydrogen. The corresponding c(2x2)-2P-3H surface unit cell can be shown to form a stable surface phase (T. Letzig et al., Phys. Rev. B, submitted). The complete transformation of the (2x2) surface to this new phase is not observed since the surface deteriorates when exposed to a higher dose of atomic hydrogen.

  19. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: christophe.cardinaud@cnrs-imn.fr [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  20. Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke

    2013-01-01

    employed to improve the power handling ability through optimizing the input impedance of the CB device. The minimized power mismatch between the CB and the common-emitter(CE) devices results in an improved saturated output power. To demonstrate the technique for power amplifier designs at mm......In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can be......-wave frequencies, a single-branch cascode based PA using single-finger devices and a two-way combined based PA using three-finger devices are fabricated. The single-branch design shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz and the two-way combined design shows a power...

  1. Electric field effect on the carrier capture of deep traps in p-type InP

    Science.gov (United States)

    Darwich, R.; Sabra, M. K.

    2010-04-01

    The electric field effect on the carrier capture cross section of deep traps has been studied. The experimental results on the H4F and H5 hole traps in p-type InP show an enhancement of the capture cross section with the increase in the applied electric field. This enhancement depends on the nature of the deep traps and its peak temperature. Increasing the electric field from 4.1×106 to 2.4×107 V/m leads to an increase in the H4F capture cross section by a factor of 3 to 20. While in the case of H5 it increases by a factor of 2 to 5 by increasing the applied electric field from 8.0×106 to 2.4×107 V/m. A theoretical model has been suggested to explain the electric field effect on the capture cross section. This model deals with the cascade and multiphonon processes semiclassically. Applying this model to the above deep traps, we have found that H4F is negatively charged complex and H5 is positively charged complex.

  2. Module 13: Bulk Packaging Shipments by Highway

    International Nuclear Information System (INIS)

    The Hazardous Materials Modular Training Program provides participating United States Department of Energy (DOE) sites with a basic, yet comprehensive, hazardous materials transportation training program for use onsite. This program may be used to assist individual program entities to satisfy the general awareness, safety training, and function specific training requirements addressed in Code of Federal Regulation (CFR), Title 49, Part 172, Subpart H -- ''Training.'' Module 13 -- Bulk Packaging Shipments by Highway is a supplement to the Basic Hazardous Materials Workshop. Module 13 -- Bulk Packaging Shipments by Highway focuses on bulk shipments of hazardous materials by highway mode, which have additional or unique requirements beyond those addressed in the ten module core program. Attendance in this course of instruction should be limited to those individuals with work experience in transporting hazardous materials utilizing bulk packagings and who have completed the Basic Hazardous Materials Workshop or an equivalent. Participants will become familiar with the rules and regulations governing the transportation by highway of hazardous materials in bulk packagings and will demonstrate the application of these requirements through work projects and examination

  3. Development of superconductor bulk for superconductor bearing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong (and others)

    2008-08-15

    Current carrying capacity is one of the most important issues in the consideration of superconductor bulk materials for engineering applications. There are numerous applications of Y-Ba-Cu-O (YBCO) bulk superconductors e.g. magnetic levitation train, flywheel energy storage system, levitation transportation, lunar telescope, centrifugal device, magnetic shielding materials, bulk magnets etc. Accordingly, to obtain YBCO materials in the form of large, single crystals without weak-link problem is necessary. A top seeded melt growth (TSMG) process was used to fabricate single crystal YBCO bulk superconductors. The seeded and infiltration growth (IG) technique was also very promising method for the synthesis of large, single-grain YBCO bulk superconductors with good superconducting properties. 5 wt.% Ag doped Y211 green compacts were sintered at 900 .deg. C {approx} 1200 .deg.C and then a single crystal YBCO was fabricated by an infiltration method. A refinement and uniform distribution of the Y211 particles in the Y123 matrix were achieved by sintering the Ag-doped samples. This enhancement of the critical current density was ascribable to a fine dispersion of the Y211 particles, a low porosity and the presence of Ag particles. In addition, we have designed and manufactured large YBCO single domain with levitation force of 10-13 kg/cm{sup 2} using TSMG processing technique.

  4. A diphoton resonance from bulk RS

    Science.gov (United States)

    Csáki, Csaba; Randall, Lisa

    2016-07-01

    Recent LHC data hinted at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to any other Standard Model particles would be too low to be detected so far. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from but close to the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  5. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  6. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    The present paper describes the preparation and properties of bulk amorphous quarternary Mg-based alloys and the influence of additional elements on the ability of the alloy to form bulk amorphous. The main goal is to find a Mg-based alloy system which shows both high strength to weight ratio and a...... low glass transition temperature. The alloys were prepared by using a relatively simple technique, i.e. rapid cooling of the melt in a copper wedge mould. The essential structural changes that are achieved by going from the amorphous to the crystalline state through the supercooled liquid state are...... discussed in this paper. On the basis of these measurements phase diagrams of the different systems were constructed. Finally, it is demonstrated that when pressing the bulk amorphous alloy onto a metallic dies at temperatures within the supercooled liquid region, the alloy faithfully replicates the surface...

  7. Orchestrating Bulk Data Movement in Grid Environments

    Energy Technology Data Exchange (ETDEWEB)

    Vazhkudai, SS

    2005-01-25

    Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralized data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.

  8. Bulk Comptonization by Turbulence in Accretion Disks

    CERN Document Server

    Kaufman, J

    2016-01-01

    Radiation pressure dominated accretion discs around compact objects may have turbulent velocities that greatly exceed the electron thermal velocities within the disc. Bulk Comptonization by the turbulence may therefore dominate over thermal Comptonization in determining the emergent spectrum. Bulk Comptonization by divergenceless turbulence is due to radiation viscous dissipation only. It can be treated as thermal Comptonization by solving the Kompaneets equation with an equivalent "wave" temperature, which is a weighted sum over the power present at each scale in the turbulent cascade. Bulk Comptonization by turbulence with non-zero divergence is due to both pressure work and radiation viscous dissipation. Pressure work has negligible effect on photon spectra in the limit of optically thin turbulence, and in this limit radiation viscous dissipation alone can be treated as thermal Comptonization with a temperature equivalent to the full turbulent power. In the limit of extremely optically thick turbulence, ra...

  9. Synthesis of Bulk Superconducting Magnesium Diboride

    Directory of Open Access Journals (Sweden)

    Margie Olbinado

    2002-06-01

    Full Text Available Bulk polycrystalline superconducting magnesium diboride, MgB2, samples were successfully prepared via a one-step sintering program at 750°C, in pre Argon with a pressure of 1atm. Both electrical resistivity and magnetic susceptibility measurements confirmed the superconductivity of the material at 39K, with a transition width of 5K. The polycrystalline nature, granular morphology, and composition of the sintered bulk material were confirmed using X-ray diffractometry (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX.

  10. Thermal relics in cosmology with bulk viscosity

    International Nuclear Information System (INIS)

    In this paper we discuss some consequences of cosmological models in which the primordial cosmic matter is described by a relativistic imperfect fluid. The latter takes into account the dissipative effects (bulk viscosity) arising from different cooling rates of the fluid components in the expanding Universe. We discuss, in particular, the effects of the bulk viscosity on Big Bang Nucleosynthesis and on the thermal relic abundance of particles, looking at recent results of PAMELA experiment. The latter has determined an anomalous excess of positron events, which cannot be explained by conventional cosmology and particle physics. (orig.)

  11. Remedial investigations for quarry bulk wastes

    International Nuclear Information System (INIS)

    The US Department of Energy proposes, as a separate operable unit of the Weldon Spring Site Remedial Action Project, to remove contaminated bulk wastes from the Weldon Spring quarry and transport them approximately four miles to the chemical plant portion of the raffinate pits and chemical plant area. The wastes will be held in temporary storage prior to the record of decision for the overall remedial action. The decision on the ultimate disposal of these bulk wastes will be included as part of the decision for management of the waste materials resulting from remedial action activities at the raffinate pits and chemical plant area. 86 refs., 71 figs., 83 tabs

  12. Radiation-hardened bulk CMOS technology

    International Nuclear Information System (INIS)

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  13. Thermal relics in cosmology with bulk viscosity

    Energy Technology Data Exchange (ETDEWEB)

    Iorio, A. [Charles University in Prague, Faculty of Mathematics and Physics, Prague (Czech Republic); Lambiase, G. [Universita di Salerno, Dipartimento di Fisica E.R. Caianiello, Fisciano (Italy); INFN, Gruppo Collegato di Salerno, Fisciano (Italy)

    2015-03-01

    In this paper we discuss some consequences of cosmological models in which the primordial cosmic matter is described by a relativistic imperfect fluid. The latter takes into account the dissipative effects (bulk viscosity) arising from different cooling rates of the fluid components in the expanding Universe. We discuss, in particular, the effects of the bulk viscosity on Big Bang Nucleosynthesis and on the thermal relic abundance of particles, looking at recent results of PAMELA experiment. The latter has determined an anomalous excess of positron events, which cannot be explained by conventional cosmology and particle physics. (orig.)

  14. Bulk Entropy in Loop Quantum Gravity

    OpenAIRE

    Livine, Etera R; Terno, Daniel R.

    2007-01-01

    In the framework of loop quantum gravity (LQG), having quantum black holes in mind, we generalize the previous boundary state counting (gr-qc/0508085) to a full bulk state counting. After a suitable gauge fixing we are able to compute the bulk entropy of a bounded region (the "black hole") with fixed boundary. This allows us to study the relationship between the entropy and the boundary area in details and we identify a holographic regime of LQG where the leading order of the entropy scales w...

  15. Bulk Entropy in Loop Quantum Gravity

    CERN Document Server

    Livine, Etera R

    2007-01-01

    In the framework of loop quantum gravity (LQG), having quantum black holes in mind, we generalize the previous boundary state counting (gr-qc/0508085) to a full bulk state counting. After a suitable gauge fixing we are able to compute the bulk entropy of a bounded region (the "black hole") with fixed boundary. This allows us to study the relationship between the entropy and the boundary area in details and we identify a holographic regime of LQG where the leading order of the entropy scales with the area. We show that in this regime we can fine tune the factor between entropy and area without changing the Immirzi parameter.

  16. 基于元素磷源的InP量子点的制备%Synthesis of InP Quantum Dots with Elemental Phosphine Source

    Institute of Scientific and Technical Information of China (English)

    王彬彬; 王莉; 汪瑾; 蒋阳

    2012-01-01

    The InP quantum dots (QDs) were synthesized via a colloidal chemical method with white phosphorus (P4), indium acetate (In (Ac)3), stearic acid and 1-octadecene (ODE) as phosphorus source, indium source, surfactant and solvent, respectively. The structure, size and shape of the quantum dots were analyzed by XRD and TEM. The resulting InP QDs were also characterized by UV-Visible absorption and fluorescence spectroscopy. The title material exhibits well-resolved absorption and emission properties. Meanwhile, the InP QDs emit at 415~517 nm in the electromagnetic spectrum showing obvious quantum size effect.%以白磷作为磷源、醋酸铟为铟源、硬脂酸为表面包覆剂、十八烯为溶剂,采用胶体化学法合成了InP量子点.X射线衍射(XRD)和透射电子显微镜(TEM)分析测试显示InP量子点属于立方闪锌矿结构,并且是直径约为5 nm的球状纳米晶.紫外可见光谱和荧光光谱分析表明,InP量子点表现出明显的激子吸收和带边发射特征,荧光发射光谱在415~517 nm范围内连续可调,呈现明显的量子尺寸效应.

  17. Irradiation Test for Liner Variable Differential Transformers in the WWR-K Core, INP-KNNC, Kazakhstan and JAEA, Japan

    International Nuclear Information System (INIS)

    A joint research is conducted between KINP and JAEA as a part of the international standard of instrumentation. In this research, the irradiation test of the LVDT is started under the partner project of the International Science and Technology Center (ISTC) from May 2010. The irradiation test is carried out to evaluate the durability of two kinds of LVDTs made of the MI-cable and the ceramic-wire under the neutron irradiation conditions. The nuclear and thermal-hydraulic design of the irradiation capsule was calculated by INP and JAEA. The irradiation capsule with LVDTs installed was developed in JAEA. This irradiation capsule is installed in the cell 5-9 in the WWR-K core. Irradiation tests are started on April 5, 2011. The total time of irradiation is 5465 hours. In each irradiation cycle, the ratio (E) of the primary-minus-secondary to primary-plus-secondary coil voltage and electrical resistance of the LVDTs are measured at various temperatures before and after the WWR-K operation. The value of E obtained for the shutdown reactor, of the MI cable-type LVDT is almost stable within the range from room temperature to 300oC. On the other hand, the value of E for the ceramic wire-type LVDT changes greatly at 270oC. The electrical resistance of MI cable-type LVDT is increased proportionally to the temperature. However the electrical resistance of ceramic wire-type LVDT changes at 270oC. In the operating WWR-K, these phenomena are observed at 6MW. In this presentation, irradiation effect on the studied ratio and electrical resistance of these LVDTs is discussed. (author)

  18. Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution

    Energy Technology Data Exchange (ETDEWEB)

    Riveros, G.; Guillemoles, J.F.; Lincot, D. [Laboratoire d' Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 (France); Gomez Meier, H. [Instituto de Chimica, Faculdad de Ciencas Basicas y Matematicas, Universidad Catolica de Valparaiso, Avda. Brasil 2950, Casila, Valparaiso (Chile); Froment, M.; Bernard, M.C.; Cortes, R. [Laboratoire de Physique des Liquides et Electrochimie (UPR CNRS 15), Universite Pierre et Marie Curie, 4 place Jussieu, F-75232 Paris Cedex 05 (France)

    2002-09-16

    Epitaxial growth of ZnSe thin films on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (-1.6-1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflective high energy electron diffraction (see Figure for a ZnSe epitaxial layer) and grazing angle X-ray diffraction. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  19. Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gas detection

    OpenAIRE

    Žďánský, K. (Karel); Yatskiv, R. (Roman)

    2012-01-01

    Schottky barriers on III-V compound semiconductors are still not well explored up to now. There were already reported Pd and Pt Schottky diode gas sensors using InP or GaN materials. However, reported sensing performances are surprisingly different. Thus, proper understanding of sensing mechanism is indispensable. We report on InP and GaN Schottky diode hydrogen sensors with low-leakage currents and high sensitivity, made by deposition of colloidal graphite and electrophoresis of Pd, Pt nebo ...

  20. EFFECT OF THE MILD METHOD OF FORMATION V XO Y/INP STRUCTURES USING V 2O 5GEL ON THE PROCESS OF THEIR OXIDATION AND COMPOSITION OF NANOSIZED OXIDE FILMS

    OpenAIRE

    MITTOVA I. YA.; Tomina, E. V.; SLADKOPEVTCEV B.V.

    2014-01-01

    A V xO y/InP structure was formed by the deposition of a V 2O 5 gel aerosol on an InP surface, followed by thermal annealing. This approach avoids chemostimulator interactions with the substrate prior to thermal oxidation, which is characteristic of ‘hard’ methods of chemostimulator deposition. The oxidation process of such structures occurs in the transit mechanism with a slight increase growth rate of films by 20-40 % in comparison with the oxidation of InP. The transit action of chemostimu...

  1. THE OPTIMIZATION OF PLUSH YARNS BULKING PROCESS

    Directory of Open Access Journals (Sweden)

    VINEREANU Adam

    2014-05-01

    Full Text Available This paper presents the experiments that were conducted on the installation of continuous bulking and thermofixing “SUPERBA” type TVP-2S for optimization of the plush yarns bulking process. There were considered plush yarns Nm 6.5/2, made of the fibrous blend of 50% indigenous wool sort 41 and 50% PES. In the first stage, it performs a thermal treatment with a turboprevaporizer at a temperature lower than thermofixing temperature, at atmospheric pressure, such that the plush yarns - deposed in a freely state on a belt conveyor - are uniformly bulking and contracting. It was followed the mathematical modeling procedure, working with a factorial program, rotatable central composite type, and two independent variables. After analyzing the parameters that have a direct influence on the bulking degree, there were selected the pre-vaporization temperature (coded x1,oC and the velocity of belt inside pre-vaporizer (coded x 2, m/min. As for the dependent variable, it was chosen the plush yarn diameter (coded y, mm. There were found the coordinates of the optimal point, and then this pair of values was verified in practice. These coordinates are: x1optim= 90oC and x 2optim= 6.5 m/min. The conclusion is that the goal was accomplished: it was obtained a good cover degree f or double-plush carpets by reducing the number of tufts per unit surface.

  2. Determining the bulk strength of strata

    International Nuclear Information System (INIS)

    The bulk rock strength of strata is determined by logging a bore-hole with an instrument to obtain a neutron-neutron log of the hole and determining in conjunction with the lithology of the strata the strength by applying an inverse relation formula. (author)

  3. Realistic anomaly mediation with bulk gauge fields

    International Nuclear Information System (INIS)

    We present a simple general framework for realistic models of supersymmetry breaking driven by anomaly mediation. We consider a 5-dimensional 'brane universe' where the visible and hidden sectors are localized on different branes, and the standard model gauge bosons propagate in the bulk. In this framework there can be charged scalar messengers that have contact interactions with the hidden sector, either localized in the hidden sector or in the bulk. These scalars obtain soft masses that feed into visible sector scalar masses at two loop order via bulk gauge interactions. This contribution is automatically flavor-blind, and can be naturally positive. If the messengers are in the bulk this contribution is automatically the same order of magnitude as the anomaly mediated contribution, independent of the brane spacing. If the messengers are localized to a brane the two effects are of the same order for relatively small brane spacings. The gaugino masses and A terms are determined completely by anomaly mediation. In order for anomaly mediation to dominate over radion mediation the radion must be is stabilized in a manner that preserves supersymmetry, with supergravity effects included. We show that this occurs in simple models. We also show that the mu problem can be solved by the vacuum expectation value of a singlet in this framework. (author)

  4. Crevice chemistry estimation from bulk water chemistry

    International Nuclear Information System (INIS)

    Since the first PWR plant in Japan started commercial operation in 1970, 22 plants are running in Japan as of the end of 1994. The main purpose of secondary water chemistry control is to minimize the corrosion possibility of the secondary system equipment, especially steam generators (SG). To achieve this objective, much effort has been concentrated on improving secondary water chemistry control. As a result of this effort, the recent secondary water chemistry in Japanese plants is well maintained in every stage of operation. However, to ensure and improve the reliability of SG, it is necessary to control crevice environments, which are located at tube/tube support plate intersections and under the sludge pile on the tube sheet. According to recent crevice monitoring examination results, the concentration behavior impurities in SG bulk water at the crevice is different for each species, and SG bulk water and crevice chemical compositions are not always equal. From these results, to control the crevice chemistry, improving bulk water chemistry control methods and a new type of molar ratio control index is needed. This paper introduces a brief summary of a recent crevice chemistry evaluation technique and bulk water chemistry control method, which is employed for crevice chemistry control, based on crevice monitoring examination results

  5. A Stereoscopic Look into the Bulk

    CERN Document Server

    Czech, Bartlomiej; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-01-01

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphism-invariant bulk operators. The CFT operators of interest are the "OPE blocks," contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space--the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow ...

  6. Teaching Advanced SQL Skills: Text Bulk Loading

    Science.gov (United States)

    Olsen, David; Hauser, Karina

    2007-01-01

    Studies show that advanced database skills are important for students to be prepared for today's highly competitive job market. A common task for database administrators is to insert a large amount of data into a database. This paper illustrates how an up-to-date, advanced database topic, namely bulk insert, can be incorporated into a database…

  7. Longitudinal bulk a coustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja;

    2009-01-01

    Design, fabrication and characterization, in terms of mass sensitivity, is presented for a polycrystalline silicon longitudinal bulk acoustic cantilever. The device is operated in air at 51 MHz, resulting in a mass sensitivity of 100 HZ/fg (1 fg = 10{su−15 g). The initial characterization is cond...

  8. Bulk sulfur (S) deposition in China

    Science.gov (United States)

    Liu, Lei; Zhang, Xiuying; Wang, Shanqian; Zhang, Wuting; Lu, Xuehe

    2016-06-01

    A systematic dataset of an observation network on a national scale has been organized to investigate the spatial distribution of bulk sulfur (S) deposition (Sdep) throughout China during 2000-2013, representing by far the most detailed data set to track the bulk sulfur deposition throughout China since 2000. Such a dataset is needed for ecosystem studies and for developing emission control policies. Bulk Sdep values showed great variations, ranging from 2.17 to 70.55 kg ha-1 y-1, with an average of 22.99 kg ha-1 y-1. The average rate of bulk Sdep located in East Coastal region (35.97 kg ha-1 y-1), Middle Yangtze region (57.90 kg ha-1 y-1), Middle Yellow River region (23.42 kg ha-1 y-1), North Coastal region (42.19 kg ha-1 y-1), Northeast region (34.28 kg ha-1 y-1), South Coastal region (36.97 kg S ha-1 y-1), Southwest region (33.85 kg ha-1 y-1) was 4.50, 7.24, 2.93, 5.28, 4.29, 4.63 and 4.24 times than that in Northwest region (7.99 kg ha-1 y-1). Bulk Sdep over China was mainly from fossil fuel combustion (76.96%), biomass burning (7.64%), crust (6.22%), aged sea salt (5.48%) and agriculture (3.68%). A systematic observation network on a national scale should be established to conduct a long-term monitoring atmospheric Sdep (including wet and dry deposition), based on exiting ecological stations administrated by different departments in China.

  9. 27 CFR 1.90 - Distilled spirits in bulk.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Distilled spirits in bulk..., NONINDUSTRIAL USE OF DISTILLED SPIRITS AND WINE, BULK SALES AND BOTTLING OF DISTILLED SPIRITS Bulk Sales and Bottling of Distilled Spirits Warehouse Receipts § 1.90 Distilled spirits in bulk. By the terms of the...

  10. Bulk solitary waves in elastic solids

    Science.gov (United States)

    Samsonov, A. M.; Dreiden, G. V.; Semenova, I. V.; Shvartz, A. G.

    2015-10-01

    A short and object oriented conspectus of bulk solitary wave theory, numerical simulations and real experiments in condensed matter is given. Upon a brief description of the soliton history and development we focus on bulk solitary waves of strain, also known as waves of density and, sometimes, as elastic and/or acoustic solitons. We consider the problem of nonlinear bulk wave generation and detection in basic structural elements, rods, plates and shells, that are exhaustively studied and widely used in physics and engineering. However, it is mostly valid for linear elasticity, whereas dynamic nonlinear theory of these elements is still far from being completed. In order to show how the nonlinear waves can be used in various applications, we studied the solitary elastic wave propagation along lengthy wave guides, and remarkably small attenuation of elastic solitons was proven in physical experiments. Both theory and generation for strain soliton in a shell, however, remained unsolved problems until recently, and we consider in more details the nonlinear bulk wave propagation in a shell. We studied an axially symmetric deformation of an infinite nonlinearly elastic cylindrical shell without torsion. The problem for bulk longitudinal waves is shown to be reducible to the one equation, if a relation between transversal displacement and the longitudinal strain is found. It is found that both the 1+1D and even the 1+2D problems for long travelling waves in nonlinear solids can be reduced to the Weierstrass equation for elliptic functions, which provide the solitary wave solutions as appropriate limits. We show that the accuracy in the boundary conditions on free lateral surfaces is of crucial importance for solution, derive the only equation for longitudinal nonlinear strain wave and show, that the equation has, amongst others, a bidirectional solitary wave solution, which lead us to successful physical experiments. We observed first the compression solitary wave in the

  11. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    Science.gov (United States)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  12. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

    International Nuclear Information System (INIS)

    The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states

  13. In situ study of the role of substrate temperature during atomic layer deposition of HfO{sub 2} on InP

    Energy Technology Data Exchange (ETDEWEB)

    Dong, H.; Santosh, K.C.; Qin, X.; Brennan, B.; McDonnell, S.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Hinkle, C. L.; Cho, K.; Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-10-21

    The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO{sub 2} on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO{sub 2} at different temperatures. An (NH{sub 4}){sub 2} S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.

  14. Evaluation of test structures for the novel n{sup +}-in-p pixel and strip sensors for very high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Unno, Y., E-mail: yoshinobu.unno@kek.jp [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Mitsui, S. [The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Hori, R.; Ikegami, Y.; Terada, S. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Kamada, S.; Yamamura, K. [Solid-state Division, Hamamatsu Photonics K.K., 1126-1 Ichino-cho, Higashi-ku, Hamamatsu-shi 435-8558 (Japan); Hanagaki, K. [Department of Physics, Osaka University, Machikaneyama-cho, Toyonaka-shi, Osaka 560-0043 (Japan); Hara, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi 305-8571 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Kimura, N. [Research Institute for Science and Engineering, Waseda University, 1-6-1 Nishi-Waseda, Shinjuku-ku, Tokyo 169-8050 (Japan); Nagai, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi 305-8571 (Japan); Nakano, I. [Department of Physics, Okayama University, 3-1-1 Tshushima-naka, Kita-ku, Okayama-shi 700-8530 (Japan); Oda, S. [Department of Physics, Kyushu University, 6-10-11 Hakozaki, Higashi-ku, Fukuoka-shi 812-8581 (Japan); Takashima, R. [Department of Education, Kyoto University of Education, 1 Fukakusa-Fujimori-cho, Fushimi-ku, Kyoto 612-8522 (Japan); Takubo, Y. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Tojo, J. [Department of Physics, Kyushu University, 6-10-11 Hakozaki, Higashi-ku, Fukuoka-shi 812-8581 (Japan); and others

    2013-12-11

    Radiation-tolerant n{sup +}-in-p silicon sensors were developed for use in very high radiation environments. Novel n{sup +}-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n{sup +} implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon–silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

  15. Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

    Science.gov (United States)

    Oomae, Hiroto; Asubar, Joel T.; Nakamura, Shinichi; Jinbo, Yoshio; Uchitomi, Naotaka

    2012-01-01

    We have directly grown zinc-blende (zb)-type MnAs thin films on InP (001) substrates without the aid of any buffer layer using molecular beam epitaxy (MBE). From the High-resolution X-ray diffraction (XRD) data, assuming face-centered cubic (fcc) MnAs structure, the average lattice constants values were calculated to be 6.068 and 6.060 Å for growth temperatures of 250 and 300 °C, respectively. High-resolution transmission electron microscopy (TEM) investigations and selected-area electron-diffraction (SAD) verified the successful growth of zb-type cubic MnAs coexisting with the NiAs-type hexagonal MnAs. The saturation magnetization was estimated to be 300 emu/cm 3 determined from the magnetic field dependence of the magnetization curves. From the temperature dependence of magnetization, the Curie temperature was found to be approximately 308 K. Success in the growth of zb-type MnAs thin films could be reasonably explained by the existence of a monolayer of InAs at the interface between the MnAs and InP substrates.

  16. Fabrication of a P-stabilized InP(0 0 1) surface at low pressure and temperature using t-butylphosphine (TBP)

    Science.gov (United States)

    Fukuda, Yasuo; Kumano, Hiroshi; Nakamura, Hiroyuki

    2004-09-01

    Fabrication of a P-stabilized InP(0 0 1)-(2 × 1) surface at low pressure and temperature using t-butylphosphine (TBP) has been studied. The (2 × 1) surface was fabricated at 260 °C using TBP (5 × 10 -6 Torr) cracked with a hot W-filament although the (2 × 4) structure was not changed by exposing to TBP (5 × 10 -6-1 × 10 -5 Torr) at 260-280 °C without the filament. Mass spectra of the cracked TBP indicate that the relative spectral intensities of P and P 2 are increased by 1.3-1.5 times higher than TBP without the filament, leading to the result that the surface can be fabricated at low pressure and temperature. The formation rate of the (2 × 1) surface by our method is higher by about one order of magnitude even at lower pressure and temperature than the reported ALE method. The (2 × 1) surface is stable at 260-280 °C in an ultrahigh vacuum. This suggests that atomic layer epitaxy (ALE) of InP can be performed at low pressure and temperature using the hot W-filament. The Auger electron spectroscopy (AES) result indicates that carbon contamination does not occur on the surface by adsorption of TBP cracked by the filament.

  17. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are ‑2.688 dBm at 210 GHz and ‑2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  18. Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

    Energy Technology Data Exchange (ETDEWEB)

    Uchitomi, Naotaka, E-mail: uchitomi@nagaokaut.ac.jp; Inoue, Hiroaki; Kato, Takahiro; Toyota, Hideyuki [Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan); Uchida, Hiroshi [Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

    2015-05-07

    Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

  19. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    Science.gov (United States)

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate. PMID:27467383

  20. Integration of bulk piezoelectric materials into microsystems

    Science.gov (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with properties of bulk-PZT5A are mostly preserved without any necessity of repolarization. Three generations of resonant vibration energy harvesters are designed, simulated and fabricated to demonstrate the competitive performance of the new fabrication process over traditional piezoelectric deposition systems. An unpackaged PZT/Si unimorph harvester with 27mm3 active device volume produces up to 205microW at 1.5g/154Hz. The prototypes have achieved the highest figure-of-merits (normalized-power-density x bandwidth) amongst previously reported inertial energy harvesters. The fabricated energy harvester is

  1. Premelting at Defects Within Bulk Colloidal Crystals

    Science.gov (United States)

    Alsayed, A. M.; Islam, M. F.; Zhang, J.; Collings, P. J.; Yodh, A. G.

    2005-08-01

    Premelting is the localized loss of crystalline order at surfaces and defects at temperatures below the bulk melting transition. It can be thought of as the nucleation of the melting process. Premelting has been observed at the surfaces of crystals but not within. We report observations of premelting at grain boundaries and dislocations within bulk colloidal crystals using real-time video microscopy. The crystals are equilibrium close-packed, three-dimensional colloidal structures made from thermally responsive microgel spheres. Particle tracking reveals increased disorder in crystalline regions bordering defects, the amount of which depends on the type of defect, distance from the defect, and particle volume fraction. Our observations suggest that interfacial free energy is the crucial parameter for premelting in colloidal and atomic-scale crystals.

  2. Fully antisymmetrised dynamics for bulk fermion systems

    International Nuclear Information System (INIS)

    The neutron star's crust and mantel are typical examples of non-uniform bulk systems with spacial localisations. When modelling such systems at low temperatures, as is the case in the crust, one has to work with antisymmetrised many-body states to get the correct fermion behaviour. Fermionic molecular dynamics, which works with an antisymmetrised product of localised wave packets, should be an appropriate choice. Implementing periodic boundary conditions into the fermionic molecular dynamics formalism would allow the study of the neutron star's crust as a bulk quantum system. Unfortunately, the antisymmetrisation is a non-local entanglement which reaches far out of the periodically repeated unit cell. In this proceeding, we give a brief overview how periodic boundary conditions and fermionic molecular dynamics can be combined without truncating the long-range many-body correlation induced by the antisymmetry of the many-body state.

  3. NPP bulk equipment dismantling problems and experience

    International Nuclear Information System (INIS)

    NPP bulk equipment dismantling problems and experience are summarized. 'ECOMET-S' JSC is shown as one of the companies which are able to make NPPs industrial sites free from stored bulk equipment with its further utilization. 'ECOMET-S' JSC is the Russian Federation sole specialized metallic LLW (MLLW) treatment and utilization facility. Company's main objectives are waste predisposal volume reduction and treatment for the unrestricted release as a scrap. Leningrad NPP decommissioned main pumps and moisture separators/steam super heaters dismantling results are presented. Prospective fragmentation technologies (diamond and electro-erosive cutting) testing results are described. The electro-erosive cutting machine designed by 'ECOMET-S' JSC is presented. The fragmentation technologies implementation plans for nuclear industry are presented too. (author)

  4. Bulk viscous cosmology with causal transport theory

    International Nuclear Information System (INIS)

    We consider cosmological scenarios originating from a single imperfect fluid with bulk viscosity and apply Eckart's and both the full and the truncated Müller-Israel-Stewart's theories as descriptions of the non-equilibrium processes. Our principal objective is to investigate if the dynamical properties of Dark Matter and Dark Energy can be described by a single viscous fluid and how such description changes when a causal theory (Müller-Israel-Stewart's, both in its full and truncated forms) is taken into account instead of Eckart's non-causal one. To this purpose, we find numerical solutions for the gravitational potential and compare its behaviour with the corresponding ΛCDM case. Eckart's and the full causal theory seem to be disfavoured, whereas the truncated theory leads to results similar to those of the ΛCDM model for a bulk viscous speed in the interval 10−11 || cb2 ∼−8

  5. Bulk band gaps in divalent hexaborides

    Energy Technology Data Exchange (ETDEWEB)

    Denlinger, Jonathan; Clack, Jules A.; Allen, James W.; Gweon, Gey-Hong; Poirier, Derek M.; Olson, Cliff G.; Sarrao, John L.; Bianchi, Andrea D.; Fisk, Zachary

    2002-08-01

    Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. This semiconducting gap implies that carriers detected in transport measurements arise from defects, and the measured location of the bulk Fermi level at the bottom of the conduction band implicates boron vacancies as the origin of the excess electrons. The measured band structure and X-point gap in CaB6 additionally provide a stringent test case for proper inclusion of many-body effects in quasi-particle band calculations.

  6. Induction detection of concealed bulk banknotes

    International Nuclear Information System (INIS)

    Bulk cash smuggling is a serious issue that has grown in volume in recent years. By building on the magnetic characteristics of paper currency, induction sensing is found to be capable of quickly detecting large masses of banknotes. The results show that this method is effective in detecting bulk cash through concealing materials such as plastics, cardboards, fabrics and aluminum foil. The significant difference in the observed phase between the received signals caused by conducting materials and ferrite compounds, found in banknotes, provides a good indication that this process can overcome the interference by metal objects in a real sensing application. This identification strategy has the potential to not only detect the presence of banknotes, but also the number, while still eliminating false positives caused by metal objects

  7. Surface-Bulk Vibrational Correlation Spectroscopy.

    Science.gov (United States)

    Roy, Sandra; Covert, Paul A; Jarisz, Tasha A; Chan, Chantelle; Hore, Dennis K

    2016-05-01

    Homo- and heterospectral correlation analysis are powerful methods for investigating the effects of external influences on the spectra acquired using distinct and complementary techniques. Nonlinear vibrational spectroscopy is a selective and sensitive probe of surface structure changes, as bulk molecules are excluded on the basis of symmetry. However, as a result of this exquisite specificity, it is blind to changes that may be occurring in the solution. We demonstrate that correlation analysis between surface-specific techniques and bulk probes such as infrared absorption or Raman scattering may be used to reveal additional details of the adsorption process. Using the adsorption of water and ethanol binary mixtures as an example, we illustrate that this provides support for a competitive binding model and adds new insight into a dimer-to-bilayer transition proposed from previous experiments and simulations. PMID:27058265

  8. Bulk metamaterials: Design, fabrication and characterization

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Malureanu, Radu; Alabastri, Alessandro;

    2009-01-01

    Bulk metamaterials claim a lot of attention worldwide. We report about our activity and advances in design, fabrication and characterization of metal-dielectric composites with three-dimensional lattices. The nomenclature of designs exhibiting negative index behaviour in the near infrared include......-layers-thick polymer woodpile photonic crystal. Characterization of such samples before and after metal deposition in the 700 nm 1700 nm range exposes some unpredictable features like an enhanced broadband transmission, which still waits to be explained.......Bulk metamaterials claim a lot of attention worldwide. We report about our activity and advances in design, fabrication and characterization of metal-dielectric composites with three-dimensional lattices. The nomenclature of designs exhibiting negative index behaviour in the near infrared includes...

  9. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  10. Nuclear Matter Bulk Parameter Scales and Correlations

    International Nuclear Information System (INIS)

    We study the arising of correlations among some isovector bulk parameters in nonrelativistic and relativistic hadronic mean-field models. For the former, we investigate correlations in the nonrelativistic (NR) limit of relativistic point-coupling models. We provide analytical correlations, for the NR limit model, between the symmetry energy and its derivatives, namely, the symmetry energy slope, curvature, skewness and fourth order derivative, discussing the conditions in which they are linear ones. We also show that some correlations presented in the NR limit model are reproduced for relativistic models presenting cubic and quartic self-interactions in its scalar field. As a direct application of such linear correlations, we remark its association with possible crossing points in the density dependence of the linearly correlated bulk parameter. (author)

  11. Brane plus Bulk Supersymmetry in Ten Dimensions

    CERN Document Server

    Bergshoeff, E A; Ortín, Tomas; Roest, D; Van Proeyen, A

    2001-01-01

    We discuss a generalized form of IIA/IIB supergravity depending on all R-R potentials C^(p) (p=0,1,...,9) as the effective field theory of Type IIA/IIB superstring theory. For the IIA case we explicitly break this R-R democracy to either p=5 which allows us to write a new bulk action that can be coupled to N=1 supersymmetric brane actions. The case of 8-branes is studied in detail using the new bulk & brane action. The supersymmetric negative tension branes without matter excitations can be viewed as orientifolds in the effective action. These D8-branes and O8-planes are fundamental in Type I' string theory. A BPS 8-brane solution is given which satisfies the jump conditions on the wall. As an application of our results we derive a quantization of the mass parameter and the cosmological constant in string units.

  12. Melt Grown ZnO Bulk Crystals

    OpenAIRE

    Schulz, Detlev; Ganschow, Steffen; Klimm, Detlef

    2009-01-01

    Bulk crystals of zinc oxide can be grown from the melt by a Bridgman technique under pressure. This new technology using an iridium crucible shows the potential to yield large single crystals of good crystalline perfection. Crystals with diameters up to 33 mm and a length of up to 50 mm have been demonstrated. The impurity content can be strongly reduced by using the crucibles repeatedly.

  13. Oscillatory Dynamical Switching System of Bulk Ferroelectrics

    OpenAIRE

    M. N.A. Halif; S. Daud; Junaidah Osman

    2005-01-01

    This study gives a detailed account of calculation of the bulk ferroelectric (FE) oscillatory dynamical system switching to first and second-order phase transition, respectively. All the formalism is delineated in the framework of Landau free-energy expansion and Landau-Khalatnikov (LK) equation of motion where the effect of external energy may affray FE atoms similar to the spring damped oscillatory system. Here we scrutinized the switching properties from free-energy expansion and hysteresi...

  14. Effective Pure States for Bulk Quantum Computation

    OpenAIRE

    Knill, Emanuel; Chuang, Isaac; Laflamme, Raymond

    1997-01-01

    In bulk quantum computation one can manipulate a large number of indistinguishable quantum computers by parallel unitary operations and measure expectation values of certain observables with limited sensitivity. The initial state of each computer in the ensemble is known but not pure. Methods for obtaining effective pure input states by a series of manipulations have been described by Gershenfeld and Chuang (logical labeling) and Cory et al. (spatial averaging) for the case of quantum computa...

  15. Superconducting RF cavities film of bulk

    CERN Document Server

    Darriulat, Pierre

    1999-01-01

    The successful operation of LEP2 has demonstrated the feasibility of using on a large scale copper accelerating cavities coated with a thin superconducting niobium film. Yet other existing or planned installations such as CEBAF and TESLA, rely instead on the bulk niobium technology. The reason is a wide spread belief that the film technology would suffer from fundamental limitations preventing high gradients to be reached...

  16. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Material profile influences in bulk-heterojunctions

    OpenAIRE

    Roehling, J.D.; Rochester, C.W.; Ro, H.W.; Wang, P.; Majewski, J; Batenburg, Joost; Arslan, I; Delongchamp, D.M.; Moulé, A.J.

    2014-01-01

    The morphology in mixed bulk-heterojunction films are compared using three different quantitative measurement techniques. We compare the vertical composition changes using high-angle annular dark-field scanning transmission electron microscopy with electron tomography and neutron and x-ray reflectometry. The three measurement techniques yield qualitatively comparable vertical concentration measurements. The presence of a metal cathode during thermal annealing is observed to alter the fulleren...

  18. Statistical Determination of Bulk Flow Motions

    CERN Document Server

    Song, Yong-Seon; Nichol, Robert C; Miller, Christopher J

    2010-01-01

    We present here a new parameterization for the bulk motions of galaxies and clusters (in the linear regime) that can be measured statistically from the shape and amplitude of the two-dimensional two-point correlation function. We further propose the one-dimensional velocity dispersion (v_p) of the bulk flow as a complementary measure of redshift-space distortions, which is model-independent and not dependent on the normalisation method. As a demonstration, we have applied our new methodology to the C4 cluster catalogue constructed from Data Release Three (DR3) of the Sloan Digital Sky Survey. We find v_p=270^{+433}km/s (also consistent with v_p=0) for this cluster sample (at z=0.1), which is in agreement with that predicted for a WMAP5-normalised LCDM model (i.e., v_p(LCDM=203km/s). This measurement does not lend support to recent claims of excessive bulk motions (\\simeq1000 km/s) which appear in conflict with LCDM, although our large statistical error cannot rule them out. From the measured coherent evolutio...

  19. Superconducting State Parameters of Bulk Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Aditya M. Vora

    2012-12-01

    Full Text Available Well recognized empty core (EMC pseudopotential of Ashcroft is used to investigate the superconducting state parameters viz; electron-phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature TC, isotope effect exponent α and effective interaction strength NOV of some (Ni33Zr671 – xVx (x = 0, 0.05, 0.1, 0.15 bulk amorphous alloys. We have incorporated five different types of local field correction functions, proposed by Hartree (H, Taylor (T, Ichimaru-Utsumi (IU, Farid et al. (F and Sarkar et al. (S to show the effect of exchange and correlation on the aforesaid properties. Very strong influence of the various exchange and correlation functions is concluded from the present study. The TC obtained from Sarkar et al. (S local field correction function are found an excellent agreement with available theoretical data. Quadratic TC equation has been proposed, which provide successfully the TC values of bulk amorphous alloys under consideration. Also, the present results are found in qualitative agreement with other such earlier reported data, which confirms the superconducting phase in the s bulk amorphous alloys.

  20. Bulk viscous cosmology in early Universe

    Indian Academy of Sciences (India)

    C P Singh

    2008-07-01

    The effect of bulk viscosity on the early evolution of Universe for a spatially homogeneous and isotropic Robertson-Walker model is considered. Einstein's field equations are solved by using `gamma-law' equation of state = ( - 1)ρ, where the adiabatic parameter gamma () depends on the scale factor of the model. The `gamma' function is defined in such a way that it describes a unified solution of early evolution of the Universe for inflationary and radiation-dominated phases. The fluid has only bulk viscous term and the coefficient of bulk viscosity is taken to be proportional to some power function of the energy density. The complete general solutions have been given through three cases. For flat space, power-law as well as exponential solutions are found. The problem of how the introduction of viscosity affects the appearance of singularity, is briefly discussed in particular solutions. The deceleration parameter has a freedom to vary with the scale factor of the model, which describes the accelerating expansion of the Universe.

  1. DEMONSTRATION BULK VITRIFICATION SYSTEM (DBVS) EXTERNAL REVIEW

    International Nuclear Information System (INIS)

    The Hanford mission to retrieve and immobilize 53 million gallons of radioactive waste from 177 underground storage tanks will be accomplished using a combination of processing by the waste treatment plant currently under construction, and a supplemental treatment that would process low-activity waste. Under consideration for this treatment is bulk vitrification, a versatile joule-heated melter technology which could be deployed in the tank farms. The Department proposes to demonstrate this technology under a Research, Development and Demonstration (RD and D) permit issued by the Washington State Department of Ecology using both non-radioactive simulant and blends of actual tank waste. From the demonstration program, data would be obtained on cost and technical performance to enable a decision on the potential use of bulk vitrification as the supplemental treatment technology for Hanford. An independent review by sixteen subject matter experts was conducted to assure that the technical basis of the demonstration facility design would be adequate to meet the objectives of the Demonstration Bulk Vitrification System (DBVS) program. This review explored all aspects of the program, including flowsheet chemistry, project risk, vitrification, equipment design and nuclear safety, and was carried out at a time when issues can be identified and corrected. This paper describes the mission need, review approach, technical recommendations and follow-on activities for the DBVS program

  2. Multiphase composites with extremal bulk modulus

    DEFF Research Database (Denmark)

    Gibiansky, L. V.; Sigmund, Ole

    2000-01-01

    This paper is devoted to the analytical and numerical study of isotropic elastic composites made of three or more isotropic phases. The ranges of their effective bulk and shear moduli are restricted by the Hashin-Shtrikman-Walpole (HSW) bounds. For two-phase composites, these bounds are attainabl...... isotropic three-dimensional three-phase composites with cylindrical inclusions of arbitrary cross-sections (plane strain problem) or transversely isotropic thin plates (plane stress or bending of plates problems). (C) 2000 Elsevier Science Ltd. All rights reserved.......This paper is devoted to the analytical and numerical study of isotropic elastic composites made of three or more isotropic phases. The ranges of their effective bulk and shear moduli are restricted by the Hashin-Shtrikman-Walpole (HSW) bounds. For two-phase composites, these bounds are attainable......, that is, there exist composites with extreme bulk and shear moduli. For multiphase composites, they may or may not be attainable depending on phase moduli and volume fractions. Sufficient conditions of attainability of the bounds and various previously known and new types of optimal composites are...

  3. Reluctance motors with bulk HTS material

    International Nuclear Information System (INIS)

    In recent years we have successfully designed, built and tested several reluctance motors with YBCO bulk material incorporated into the rotor, working at 77 K. Our last motor type SRE150 was tested up to 200 kW. The aim of our investigations is the construction of motors with extremely high power density and dynamics. In comparison to conventional motor types the advantage of HTS reluctance motors with respect to size and dynamics could be demonstrated. Some fields of possible future applications will be described. These motors show a significant improvement in performance using high quality HTS bulk elements in the rotor. Until now the motor parameters have been limited by the current density which could be obtained in the bulk material at 77 K and by the geometric dimensions of the segments available. Therefore we expect further improvements in the case of these materials. Since the total motor including stator and rotor is working at low temperature we have to optimize the windings and the magnetic circuit to these operation conditions. A new design of a 200 kW motor in order to achieve increased power density and the theoretical results of our calculations will be shown

  4. Bulk Comptonization by turbulence in accretion discs

    Science.gov (United States)

    Kaufman, J.; Blaes, O. M.

    2016-06-01

    Radiation pressure dominated accretion discs around compact objects may have turbulent velocities that greatly exceed the electron thermal velocities within the disc. Bulk Comptonization by the turbulence may therefore dominate over thermal Comptonization in determining the emergent spectrum. Bulk Comptonization by divergenceless turbulence is due to radiation viscous dissipation only. It can be treated as thermal Comptonization by solving the Kompaneets equation with an equivalent `wave' temperature, which is a weighted sum over the power present at each scale in the turbulent cascade. Bulk Comptonization by turbulence with non-zero divergence is due to both pressure work and radiation viscous dissipation. Pressure work has negligible effect on photon spectra in the limit of optically thin turbulence, and in this limit radiation viscous dissipation alone can be treated as thermal Comptonization with a temperature equivalent to the full turbulent power. In the limit of extremely optically thick turbulence, radiation viscous dissipation is suppressed, and the evolution of local photon spectra can be understood in terms of compression and expansion of the strongly coupled photon and gas fluids. We discuss the consequences of these effects for self-consistently resolving and interpreting turbulent Comptonization in spectral calculations in radiation magnetohydrodynamic simulations of high luminosity accretion flows.

  5. Activities report of the National Space Research Institute Plasma Laboratory for the period 1988/1989; Relatorio de atividades do Laboratorio Associado de Plasma do INPE no bienio 88/89

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Gerson Otto

    1990-11-01

    This report describes the activities performed in the period 1988/1989 by the National Space Research Institute (INPE/SCT) Plasma Laboratory (LAP). The report presents the main results in the following research lines: plasma physics, plasma technology, and controlled thermonuclear fusion. (author). 49 figs., 3 tabs.

  6. Low carrier removal rates and annealing behavior of thermally diffused p+n (Cd,S) InP structures after 1013cm-2 3MeV proton irradiation

    International Nuclear Information System (INIS)

    Recently on bare p+n (Cd,S) InP diffused cells the authors recorded AMO, 25C VOC values exceeding 880 mV. In this work they present some of their most recent results showing much lower carrier removal rates in the emitter of p+n (Cd,S) diffused structures as compared to p+n (Zn,S) structures after irradiation with 1013cm-2, 3 MeV protons. They also show the complete recovery of emitter carrier concentration profiles of p+n (Cd,S) structures after about 2 months in dark at room temperature, a behavior they have not observed for the p+n (Zn,S) structures. The drop in ISC, FF and efficiency of diffused p+n (Cd,S) InP cells after proton irradiation is lower than previously reported values for n+p (Si,Zn) InP cells fabricated by MOCVD or n+p (S,Zn) InP cells fabricated by diffusion

  7. MiR-125b promotes proliferation and migration of type II endometrial carcinoma cells through targeting TP53INP1 tumor suppressor in vitro and in vivo

    International Nuclear Information System (INIS)

    Our previous studies have identified that miR-125b was overexpressed in type II endometrial carcinoma (EC) cells compared with type I using microRNAs microarray. Although recent studies have shown the important role of miR-125b in several tumors and overexpression of miR-125b in advanced EC, its function in this disease has not yet been defined. In the present study, we tried to confirm the result of microRNAs microarray and further investigated the functions of miR-125b in EC, and tried to find new downstream targets of miR-125b. Differential expression of miR-125b was detected between type II EC cells (KLE, AN3CA) with ER negative and type I EC cells (ishikawa, RL95-2) with ER positive by qRT-PCR and northern blotting. The effects of miR-125b of on proliferation, migration, and target protein expression were evaluated by CCK8 assay, wound healing assay, transwell migration assay, western blotting, and Tumorigenicity assays in nude mice. In addition, luciferase reporter plasmid was constructed to demonstrate the direct target of miR-125b. MiR-125b was overexpressed in type II EC cells compared with type I. Exogenous miR-125b expression increased proliferation and migration of ishikawa cells and abrogating expression of miR-125b suppressed proliferation, and migration of AN3CA cells in vitro. In addition, in vivo tumor formation assay confirmed that forced miR-125b expression promoted proliferation potential of ishikawa cells, and tumor suppressor gene Tumor Protein 53-Induced Nuclear Protein 1 (TP53INP1) was identified to be the direct target of miR-125b. TP53INP1 was newly identified to be the direct downstream target of miR-125b. MiR-125b, which was overexpressed in type II EC cells compared with type I, contributes to malignancy of type II EC possibly through down-regulating TP53INP1

  8. Evolution of bulk damage initiation in DKDP

    Science.gov (United States)

    Carr, Christopher W.; McMillian, T. H.; Staggs, Mike C.; Radousky, Harry B.; Demos, Stavros G.

    2003-05-01

    We investigate the evolution of laser-induced damage initiated in the bulk of DKDP crystals using in-situ microscopy. Experimental results indicate that at peek fluences greater than 10 J/cm2, damage sites are formed with increasing number as a function of the laser fluence. Following plasma formation, cracks are observed which grow in size for tens of seconds after the termination of the laser pulse. Subsequent irradiation leads to modest increase in size only during the initial 2-5 pulses. Experimental results suggest that there is also relaxation of the stresses adjacent to a damage site for several hours after initial damage.

  9. Calculated Bulk Properties of the Actinide Metals

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.

    1978-01-01

    Self-consistent relativistic calculations of the electronic properties for seven actinides (Ac-Am) have been performed using the linear muffin-tin orbitals method within the atomic-sphere approximation. Exchange and correlation were included in the local spin-density scheme. The theory explains t...... the variation of the atomic volume and the bulk modulus through the 5f series in terms of an increasing 5f binding up to plutonium followed by a sudden localisation (through complete spin polarisation) in americium...

  10. Neutron moisture gage for bulk material

    International Nuclear Information System (INIS)

    Desing and operation of neutron moisture gage of bulk materials intended for the determination of moisture of coke, agglomerated charge, and iron ore concentrate in black metallurgy is described. The moisture gage operates both under ''measurement'' and ''calibration'' conditions, contains a fast neutron source, and two groups of slow neutron detectors. Technical and economic efficiency of the moisture gage utilization consists in the improved accuracy of moisture detection at the expense of more accurate calibration, optimum arrangement of the carriage in a hopper, and stabilization of detector temperature. The device service is also simplified

  11. Oscillatory Dynamical Switching System of Bulk Ferroelectrics

    Directory of Open Access Journals (Sweden)

    M. N.A. Halif

    2005-01-01

    Full Text Available This study gives a detailed account of calculation of the bulk ferroelectric (FE oscillatory dynamical system switching to first and second-order phase transition, respectively. All the formalism is delineated in the framework of Landau free-energy expansion and Landau-Khalatnikov (LK equation of motion where the effect of external energy may affray FE atoms similar to the spring damped oscillatory system. Here we scrutinized the switching properties from free-energy expansion and hysteresis loop. The polarization and current switching appropriate to the estimated complete switching time, changing of temperature, electric field and damping are scrutinized and discussed.

  12. Active neutron multiplicity counting of bulk uranium

    International Nuclear Information System (INIS)

    This paper describes a new nondestructive assay technique being developed to assay bulk uranium containing kilogram quantities of 235U. The new technique uses neutron multiplicity analysis of data collected with a coincidence counter outfitted with AmLi neutron sources. We have calculated the expected neutron multiplicity count rate and assay precision for this technique and will report on its expected performance as a function of detector design characteristics, 235U sample mass, AmLi source strength, and source-to-sample coupling. 11 refs., 2 figs., 2 tabs

  13. The bulk composition of exo-planets

    CERN Document Server

    Gaensicke, Boris; Dufour, Patrick; Farihi, Jay; Jura, Michael; Kilic, Mukremin; Melis, Carl; Veras, Dimitri; Xu, Siyi; Zuckerman, Ben

    2015-01-01

    Priorities in exo-planet research are rapidly moving from finding planets to characterizing their physical properties. Of key importance is their chemical composition, which feeds back into our understanding of planet formation. For the foreseeable future, far-ultraviolet spectroscopy of white dwarfs accreting planetary debris remains the only way to directly and accurately measure the bulk abundances of exo-planetary bodies. The exploitation of this method is limited by the sensitivity of HST, and significant progress will require a large-aperture space telescope with a high-throughput ultraviolet spectrograph.

  14. Heavy Quark Energy Loss and Bulk Physics

    International Nuclear Information System (INIS)

    We show that the low-pT data and high-pT data from RHIC and LHC give a contradictory picture of the relevant dynamics of a quark-gluon plasma. While the bulk observables imply a strongly coupled fluid best described by AdS/CFT the rare probes imply a weakly coupled gas best described using thermal pQCD. These conclusions are based on leading order theoretical calculations, and we speculate that more sophisticated calculations that include higher order effects might provide a resolution to the current puzzle

  15. New Class of Plastic Bulk Metallic Glass

    International Nuclear Information System (INIS)

    An intrinsic plastic Cu45Zr46Al7Ti2 bulk metallic glass (BMG) with high strength and superior compressive plastic strain of up to 32.5% was successfully fabricated by copper mold casting. The superior compressive plastic strain was attributed to a large amount of randomly distributed free volume induced by Ti minor alloying, which results in extensive shear band formation, branching, interaction and self-healing of minor cracks. The mechanism of plasticity presented here suggests that the creation of a large amount of free volume in BMGs by minor alloying or other methods might be a promising new way to enhance the plasticity of BMGs

  16. Improving the bulk data transfer experience

    Energy Technology Data Exchange (ETDEWEB)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  17. Bulk hydrogen analysis by neutron scattering

    International Nuclear Information System (INIS)

    The efforts of the UCT-based group now working on bulk analysis using neutrons are directed mainly towards developing methods for detecting concealed explosive or other hidden contraband, such as drugs. The technique which we are developing, called fast neutron scattering analysis (FNSA), is based on the detection and measurement of hydrogen and other elements, particularly carbon, nitrogen and oxygen, by means of fast neutron scattering measurements. This report describes progress achieved over the past year in the work on fast neutron scattering analysis and in the development of detection techniques for plastic land mines

  18. Forming of bulk metallic glass microcomponents

    DEFF Research Database (Denmark)

    Wert, John A.; Thomsen, Christian; Jensen, Rune Debel;

    2009-01-01

    The present article considers forward extrusion, closed-die forging and backward extrusion processes for fabrication of individual microcomponents from two bulk metallic glass (BMG) compositions: Mg60Cu30Y10 and Zr44Cu40Ag8Al8. Two types of tooling were used in the present work: relatively massive...... die sets characteristic of cold forming operations for crystalline metals and lightweight die sets adapted to the special characteristics of BMGs. In addition to demonstrating that microcomponents of several geometries can be readily fabricated from BMGs, rheological properties are combined with...

  19. Characterization of the dominating bulk recombination in bulk-heterojunction blends using photoinduced absorption

    Science.gov (United States)

    Sandén, S.; Wilson, N. M.; Sandberg, O. J.; Ã-sterbacka, R.

    2016-05-01

    In this work we show how to clarify the dominating bulk recombination in organic solar cells by using photoinduced absorption. We show how to use the intensity and frequency dependence of the in-phase and quadrature signals to obtain the effective reaction order. For trap-assisted recombination, we can show using a multiple trapping and retrapping model with an exponential tail-state distribution that a temperature dependent reaction order is obtained which allows for determination of the characteristic energy of the exponential distribution of trap-states. In the model system pBTTT:PC60BM, we show that trap-assisted recombination is the dominating bulk recombination in 1:1 blends with a characteristic energy of the exponential trap distribution E c h = 44 ± 5 meV. The 1:4 blend, on the other hand, shows temperature independent behavior in good agreement with a dominating 2D Langevin bulk recombination.

  20. Ultra-broadband Superradiant Pulses from Femtosecond Laser Pumped InP based Quantum Well Laser Diode

    Science.gov (United States)

    Liu, Jingjing

    Laser techniques, such as gain / Q switching, mode-locking, have successfully overcome the energy restriction of gain clamping in the stead-state operated lasers, and allowed the generation of giant pulses with short pulse durations. However, gain saturation further limits the amount of stored energy in a gain medium, and therefore limits the possible maximum pulse energy obtained by laser techniques. Here we circumvent both gain clamping and the capacity limitation of energy storage by operating the double-quantum-well laser diode chips on ultrafast gain-switching model using femtosecond (fs) laser pulses as the optical pump. The advantage of our pumping approach is that the fs pulse can instantly produce a very large number of carriers, and therefore enable the formation of non-equilibrium coherent e-h BCS-like condensate state in a large energy region from the lowest QW subband edges to the highest subband and then obtain the ultra-broadband superradiant pulses. Superradiance (SR) or the coherent spontaneous emission is not a new quantum optics phenomenon, which has been proposed in 1954 by R. Dicke, even earlier than the invention of laser. It is famous as by its ultrashort duration, high peak power, high coherence and high timing jitter. Recently, femtosecond SR pulses have been generated from semiconductors. This investigation has revived both theoretical and experimental studies of SR emission. In this thesis, we have demonstrated the generation of intense, delayed SR pulses from the InP based double quantum well laser diode at room temperature. The 1040 nm femtosecond laser was applied as the optical pumping source, and when the pump power is high enough, the cooperative recombination of e-h pairs from higher order quantum energy levels can occur to generate SR bursts earlier than the cooperative emission from the lower quantum energy levels. Then, ultra-broadband TM polarized SR pulses have been firstly generated at room temperature. Our experiments also

  1. A Batch Feeder for Inhomogeneous Bulk Materials

    Science.gov (United States)

    Vislov, I. S.; Kladiev, S. N.; Slobodyan, S. M.; Bogdan, A. M.

    2016-04-01

    The work includes the mechanical analysis of mechanical feeders and batchers that find application in various technological processes and industrial fields. Feeders are usually classified according to their design features into two groups: conveyor-type feeders and non-conveyor feeders. Batchers are used to batch solid bulk materials. Less frequently, they are used for liquids. In terms of a batching method, they are divided into volumetric and weighting batchers. Weighting batchers do not provide for sufficient batching accuracy. Automatic weighting batchers include a mass controlling sensor and systems for automatic material feed and automatic mass discharge control. In terms of operating principle, batchers are divided into gravitational batchers and batchers with forced feed of material using conveyors and pumps. Improved consumption of raw materials, decreased loss of materials, ease of use in automatic control systems of industrial facilities allows increasing the quality of technological processes and improve labor conditions. The batch feeder suggested by the authors is a volumetric batcher that has no comparable counterparts among conveyor-type feeders and allows solving the problem of targeted feeding of bulk material batches increasing reliability and hermeticity of the device.

  2. Effective pure states for bulk quantum computation

    International Nuclear Information System (INIS)

    In bulk quantum computation one can manipulate a large number of indistinguishable quantum computers by parallel unitary operations and measure expectation values of certain observables with limited sensitivity. The initial state of each computer in the ensemble is known but not pure. Methods for obtaining effective pure input states by a series of manipulations have been described by Gershenfeld and Chuang (logical labeling) [Science 275, 350 (1997)] and Cory et al. (spatial averaging) [Proc. Natl. Acad. Sci. USA 94, 1634 (1997)] for the case of quantum computation with nuclear magnetic resonance. We give a different technique called temporal averaging. This method is based on classical randomization, requires no ancilla quantum bits, and can be implemented in nuclear magnetic resonance without using gradient fields. We introduce several temporal averaging algorithms suitable for both high-temperature and low-temperature bulk quantum computing and analyze the signal-to-noise behavior of each. Most of these algorithms require only a constant multiple of the number of experiments needed by the other methods for creating effective pure states. copyright 1998 The American Physical Society

  3. Ideal bulk pressure of active Brownian particles

    Science.gov (United States)

    Speck, Thomas; Jack, Robert L.

    2016-06-01

    The extent to which active matter might be described by effective equilibrium concepts like temperature and pressure is currently being discussed intensely. Here, we study the simplest model, an ideal gas of noninteracting active Brownian particles. While the mechanical pressure exerted onto confining walls has been linked to correlations between particles' positions and their orientations, we show that these correlations are entirely controlled by boundary effects. We also consider a definition of local pressure, which describes interparticle forces in terms of momentum exchange between different regions of the system. We present three pieces of analytical evidence which indicate that such a local pressure exists, and we show that its bulk value differs from the mechanical pressure exerted on the walls of the system. We attribute this difference to the fact that the local pressure in the bulk does not depend on boundary effects, contrary to the mechanical pressure. We carefully examine these boundary effects using a channel geometry, and we show a virial formula for the pressure correctly predicts the mechanical pressure even in finite channels. However, this result no longer holds in more complex geometries, as exemplified for a channel that includes circular obstacles.

  4. Enhancing bulk superconductivity by engineering granular materials

    Science.gov (United States)

    Mayoh, James; García García, Antonio

    2014-03-01

    The quest for higher critical temperatures is one of the main driving forces in the field of superconductivity. Recent theoretical and experimental results indicate that quantum size effects in isolated nano-grains can boost superconductivity with respect to the bulk limit. Here we explore the optimal range of parameters that lead to an enhancement of the critical temperature in a large three dimensional array of these superconducting nano-grains by combining mean-field, semiclassical and percolation techniques. We identify a broad range of parameters for which the array critical temperature, TcArray, can be up to a few times greater than the non-granular bulk limit, Tc 0. This prediction, valid only for conventional superconductors, takes into account an experimentally realistic distribution of grain sizes in the array, charging effects, dissipation by quasiparticles and limitations related to the proliferation of thermal fluctuations for sufficiently small grains. For small resistances we find the transition is percolation driven. Whereas at larger resistances the transition occurs above the percolation threshold due to phase fluctuations. JM acknowledes support from an EPSRC Ph.D studentship, AMG acknowledges support from EPSRC, grant No. EP/I004637/1, FCT, grant PTDC/FIS/111348/2009 and a Marie Curie International Reintegration Grant PIRG07-GA-2010-268172.

  5. Substantial bulk photovoltaic effect enhancement via nanolayering.

    Science.gov (United States)

    Wang, Fenggong; Young, Steve M; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M

    2016-01-01

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)(1-x)). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition. PMID:26791545

  6. Perovskite oxides: Oxygen electrocatalysis and bulk structure

    Science.gov (United States)

    Carbonio, R. E.; Fierro, C.; Tryk, D.; Scherson, D.; Yeager, Ernest

    1987-01-01

    Perovskite type oxides were considered for use as oxygen reduction and generation electrocatalysts in alkaline electrolytes. Perovskite stability and electrocatalytic activity are studied along with possible relationships of the latter with the bulk solid state properties. A series of compounds of the type LaFe(x)Ni1(-x)O3 was used as a model system to gain information on the possible relationships between surface catalytic activity and bulk structure. Hydrogen peroxide decomposition rate constants were measured for these compounds. Ex situ Mossbauer effect spectroscopy (MES), and magnetic susceptibility measurements were used to study the solid state properties. X ray photoelectron spectroscopy (XPS) was used to examine the surface. MES has indicated the presence of a paramagnetic to magnetically ordered phase transition for values of x between 0.4 and 0.5. A correlation was found between the values of the MES isomer shift and the catalytic activity for peroxide decomposition. Thus, the catalytic activity can be correlated to the d-electron density for the transition metal cations.

  7. 19 CFR 151.24 - Unlading facilities for bulk sugar.

    Science.gov (United States)

    2010-04-01

    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a...

  8. 7 CFR 58.313 - Print and bulk packaging rooms.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Print and bulk packaging rooms. 58.313 Section 58.313 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards....313 Print and bulk packaging rooms. Rooms used for packaging print or bulk butter and related...

  9. Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

    Institute of Scientific and Technical Information of China (English)

    Zhang Yang; Zeng Yi-Ping; Ma Long; Wang Bao-Qiang; Zhu Zhan-Ping; Wang Liang-Chen; Yang Fu-Hua

    2006-01-01

    This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm2 has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

  10. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates

    International Nuclear Information System (INIS)

    A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37–100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the InxGa1−xAs quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.

  11. GaInAs Junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing

    International Nuclear Information System (INIS)

    GaInAs JFETs were fabricated on VPE-grown GaInAs layers. The pn junctions have been realised with Be ion implantation and rapid thermal annealing. The devices show a high transconductance of 130 mS/mm and an electron saturation velocity of 1.8 x 107 cm/s. Channel mobilities measured at the complete device are as high as 6800 cm2/Vs. These excellent device properties are due to the use of an undoped InP buffer layer which avoids the diffusion of Fe from the substrate into the active layer. The data were supported by S-parameter measurements which gave a frequency limit of 20 GHz for gate dimensions of 1.6 by 200 μm2. (author)

  12. Electric field effect on the emission rate of H4F and H4S hole traps in InP

    International Nuclear Information System (INIS)

    The electric field effect on the emission rate enhancement of the H4F and H4S hole trap in highly Zn-doped InP has been examined using the deep level transient spectroscopy (DLTS) and double correlation DLTS (DDLTS). The DLTS and DDLTS results have been found to be in good agreement for low and intermediate electric fields, but they disagree for large field effect. Comparing our emission data with the theory, we have found that H4F obeys the quantum model of phonon-assisted tunneling while H4S follows the Poole-Frenkel model employing a three-dimensional screening coulombic potential. Our results show that the H4S defect can be attributed to a charged (Vp - Zn) complex. (author)

  13. Electric field effect on the emission rate of H4F and H4S hole traps in InP

    Science.gov (United States)

    Darwich, R.; Alek, B.

    2009-05-01

    The electric field effect on the emission rate enhancement of the H4F and H4S hole trap in highly Zn-doped InP has been examined using the deep level transient spectroscopy (DLTS) and double correlation DLTS (DDLTS). The DLTS and DDLTS results have been found to be in good agreement for low and intermediate electric fields, but they disagree for large field effect. Comparing our emission data with the theory, we have found that H4F obeys the quantum model of phonon-assisted tunneling, while H4S follows the Poole-Frenkel model employing a three-dimensional screening Coulombic potential. Our results show that the H4S defect can be attributed to a charged (Vp-Zn ) complex.

  14. Effect of file-pulse parameters on deep-level transient spectroscopy peaks in highly-doped P-type InP

    International Nuclear Information System (INIS)

    The effect of different fill-pulse parameters on the characteristics of deep-level transient spectroscopy (DLTS) peaks has been studied in the example of the hole traps H4f and H5 in electron-irradiated highly-doped p-type InP. It is shown that the saturation peak height, the temperature of the peak maximum and its full width at half maximum (FWHM) depend on the applied reverse bias, the pulse amplitude, its frequency and duration. The results show that the origin of this dependence is the electric field presented in the space charge region (SCR). The experimental results are analyzed in terms of the effect of the electric field on the refilled traps in the SCR. The appropriate experimental conditions for the correct extraction of information from the DLTS spectrum are defined. (Author)

  15. Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP

    Science.gov (United States)

    Darwich, R.; Massarani, B.

    2000-07-01

    The effect of different fill-pulse parameters on the characteristics of deep-level transient spectroscopy (DLTS) peaks has been studied in the example of the hole traps H4F and H5 in electron-irradiated highly doped p-type InP. It is shown that the saturation peak height, the temperature of the peak maximum and its full width at half maximum depend on the applied reverse bias, the pulse amplitude, its frequency and duration. Our results show that the origin of this dependence is the electric field present in the space charge region (SCR). The experimental results are analyzed in terms of the effect of the electric field on the refilled traps in the SCR. The appropriate experimental conditions for the correct extraction of information from the DLTS spectrum are defined.

  16. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

    Science.gov (United States)

    Sugiyama, Hiroki; Teranishi, Atsushi; Suzuki, Safumi; Asada, Masahiro

    2014-03-01

    We report metal-organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current-voltage characteristics with a high peak current density (JP) of around 2 × 105 A/cm2 and peak-to-valley ratio (PVR) of around 6. A comparison with control RTDs consisting of AlAs/In0.8Ga0.2As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR.

  17. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm2, respectively, under AM 1.5 solar radiation

  18. Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization

    Czech Academy of Sciences Publication Activity Database

    Dubecký, F.; Oswald, Jiří; Kindl, Dobroslav; Hubík, Pavel; Gombia, E.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Nečas, V.; Mudroň, J.

    Bratislava: FEI STU, 2014 - (Vajda, J.; Jamnický, I.), s. 214-218 ISBN 978-80-227-4179-8. [International Conference on Applied Physics of Condensed Matter /20./. Štrbské Pleso (SK), 25.06.2014-27.06.2014] Institutional support: RVO:68378271 Keywords : current-voltage measurements * photocurrent spectroscopy * GaAs Subject RIV: BM - Solid Matter Physics ; Magnetism

  19. Investigations of 6LiIn1-xGaxSe2 semi-insulating crystals for neutron detection

    Science.gov (United States)

    Wiggins, Brenden; Bell, Joseph; Burger, Arnold; Stassun, Keivan; Stowe, Ashley C.

    2015-08-01

    Neutron detectors are used for illicit material detection, neutron radiography, stellar investigations of chemical content including biological compounds in planetary terrain and to monitor nuclear power plant fuel products and radioactive waste. Li-containing chalcogenide materials are promising alternative thermal neutron detection materials due to the incorporation of the 6Li isotope at high density. 6LiInSe2 is limited in its effective thermal neutron efficiency by 115In neutron capture which results in gamma decay rather than charge creation. This study includes investigations of mixed crystalline material 6LiIn1-xGaxSe2 where the indium concentration is reduced by Ga substitution. The optical properties have been tuned by gallium substitution and radiation response has been observed.

  20. Evolution of transport properties along a semi-insulating CdTe crystal grown by vertical gradient freeze method

    International Nuclear Information System (INIS)

    The evolution of transport properties along a chlorine-doped CdTe crystal grown by the gradient freeze (GF) method has been investigated by time of flight (TOF) measurement. Drift mobilities as high as 1100 cm2/(Vs) and 80 cm2/(Vs) for electrons and holes, respectively, are measured at the initial part of the grown crystal, and were found to decrease with increasing solidified fraction (g). On the other hand, the specific resistivity increases with increasing g. These behaviors can be understood as the dopant (Cl) concentration variation due to segregation during growth. The change in γ-detection properties between crystals having different g is demonstrated. (author)

  1. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sherohman, John W. (Livermore, CA); Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong (Livermore, CA); Wu, Kuang Jen J. (Cupertino, CA)

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  2. Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

    Czech Academy of Sciences Publication Activity Database

    Gladkov, Petar; Humlíček, J.; Hulicius, Eduard; Šimeček, Tomislav; Paskova, T.; Evans, K.

    2010-01-01

    Roč. 312, č. 8 (2010), s. 1205-1209. ISSN 0022-0248 R&D Projects: GA AV ČR IAA100100719; GA MŠk(CZ) LC06040 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521 Keywords : Fe-doping * Optical characterization * Hybride vapor phase epitaxy * Nitrides Subject RIV: JB - Sensors, Measurment, Regulation Impact factor: 1.737, year: 2010

  3. Highly efficient and electrically robust carbon irradiated semi-insulating GaAs based photoconductive terahertz emitters

    International Nuclear Information System (INIS)

    We demonstrate here an efficient photoconductive THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters (PCEs) by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 μm deep, we have created lot of defects and decreased the lifetime of photo-excited carriers inside the substrate. Depending on the irradiation dose, we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the device. This has resulted in increasing maximum cut-off of the applied voltage across PCE electrodes to operate the device without thermal breakdown from ∼35 V to >150 V for the 25 μm electrode gaps. At optimum operating conditions, carbon irradiated (1014 ions/cm2) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ∼800

  4. Highly efficient and electrically robust carbon irradiated semi-insulating GaAs based photoconductive terahertz emitters

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Abhishek; Pal, Sanjoy; Surdi, Harshad; Prabhu, S. S., E-mail: prabhu@tifr.res.in; Nanal, Vandana; Pillay, R. G. [Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

    2014-02-10

    We demonstrate here an efficient photoconductive THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters (PCEs) by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 μm deep, we have created lot of defects and decreased the lifetime of photo-excited carriers inside the substrate. Depending on the irradiation dose, we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the device. This has resulted in increasing maximum cut-off of the applied voltage across PCE electrodes to operate the device without thermal breakdown from ∼35 V to >150 V for the 25 μm electrode gaps. At optimum operating conditions, carbon irradiated (10{sup 14} ions/cm{sup 2}) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ∼800.

  5. High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Vaughan, E. I.; Addamane, S.; Shima, D. M.; Balakrishnan, G.; Hecht, A. A.

    2016-04-01

    Thin-film structures containing AlSb were grown using solid-source molecular beam epitaxy and characterized for material quality, carrier transport optimization, and room-temperature radiation detection response. Few surface defects were observed, including screw dislocations resulting from shear strain between lattice-mismatched layers. Strain was also indicated by broadening of the AlSb peak in x-ray diffraction measurements. Threading dislocations and interfacial misfit dislocations were seen with transmission electron microscopy imaging. Doping of the AlSb layer was introduced during growth using GaTe and Be to determine the effect on Hall transport properties. Hall mobility and resistivity were largest for undoped AlSb samples, at 3000 cm2/V s and 106 Ω cm, respectively, and increased doping levels progressively degraded these values. To test for radiation response, p-type/intrinsic/ n-type (PIN) diode structures were grown using undoped AlSb on n-GaAs substrates, with p-GaSb cap layers to protect the AlSb from oxidation. Alpha-particle radiation detection was achieved and spectra were produced for 241Am, 252Cf, and 239Pu sources. Reducing the detector surface area increased the pulse height observed, as expected based on voltage-capacitance relationships for diodes.

  6. Non-steady-state photo-EMF in semi-insulating GaAs under frequency-modulated illumination

    OpenAIRE

    Bryushinin, M; Kulikov, V.; Sokolov, I.; Delaye, Philippe; Pauliat, Gilles

    2014-01-01

    PACS 42.65.Sf – Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics PACS 42.70.Nq – Other nonlinear optical materials; photorefractive and semiconductor materials Abstract – We report the excitation of the non-steady-state photoelectromotive force using a uniformly accelerated motion of the recording light pattern. Such illumination is created by the linear frequency modulation of the interfering light beams. The pul...

  7. Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field

    International Nuclear Information System (INIS)

    In 1932 Hecht obtained his famous equation concerning the charge induced on the plates of a planar radiation detector in the presence of a uniform electric field. It is well known that in many cases, due to non-ohmic contacts or, in any case, in the presence of spatial charge, the internal electric field is no longer constant, so this formula could lead to wrong conclusions. In this article the authors examine the common case of an electric field decreasing linearly along the detector thickness. This is a very interesting case because this shape of field is fairly widespread in the presence of diffused spatial charge and the functional dependence of the collected charge on varying the applied bias, in some cases, is similar to the Hecht equation. The authors believe that this model could be an important instrument for interpreting the data arising from pulsed photocurrent measures. Starting from Ramo–Shockley theorem and under the same Hecht's hypotheses (except for the uniform field), we calculate the new relation between the collected charge and the applied bias. (paper)

  8. Bulk forming of industrial micro components in conventional metals and bulk metallic glasses

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Paldan, Nikolas Aulin; Eriksen, Rasmus Solmer;

    2007-01-01

    For production of micro components in large numbers, forging is an interesting and challenging process. The conventional metals like silver, steel and aluminum often require multi-step processes, but high productivity and increased strength justify the investment. As an alternative, bulk metallic...

  9. Organic hybrid planar-nanocrystalline bulk heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Yang, Fan

    2013-04-09

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  10. Contact characteristics for YBCO bulk superconductors

    Science.gov (United States)

    Yamamoto, Naoki; Sakai, Tomokazu; Sawa, Koichiro; Tomita, Masaru; Murakami, Masato

    2003-10-01

    We have studied the contact characteristics of two resin-impregnated YBCO (a composite of YBa 2Cu 3O y and Y 2BaCuO 5) bulk superconductors in mechanical contact. A switching phenomenon could be observed at a threshold current or a transfer current value in the V- I curves of the YBCO contact. The transfer current exceeded the previous value of 13.5 A at 77 K in the contact when the sample surfaces were carefully polished. The present results suggest that a pair of YBCO blocks might be applicable to the mechanical persistent current switch for superconducting magnetic energy storage and other superconducting systems run in a persistent current mode.

  11. Crack evolution in bulk metallic glasses

    International Nuclear Information System (INIS)

    In the present study, the mechanisms underlying plastic deformation of a Ni-based bulk metallic glass (BMG) are explored. Based on the microstructural investigations, a model is proposed how fracture emerges in BMGs. After deformation, the glass is macroscopically more fragile indicating a decrease in the viscosity within the shear bands due to shear softening. These fluctuations of viscosity and therefore Poisson ratio between the deformed and undeformed regions appear to be the initiation sites for nanometer-scale cracks, which are aligned parallel to the applied force. Coalescence of voids is believed to form these small cracks, which eventually interconnect along the interface between the sheared and unsheared regions to form a detrimental defect resulting in fracture.

  12. Bulk nanoscale materials in steel products

    International Nuclear Information System (INIS)

    Although a number of nanoscale metallic materials exhibit interesting mechanical properties the fabrication paths are often complex and difficult to apply to bulk structural materials. However a number of steels which exhibit combinations of plasticity and phase transitions can be deformed to produce ultra high strength levels in the range 1 to 3 GPa. The resultant high stored energy and complex microstructures allow new nanoscale structures to be produced by combinations of recovery and recrystallisation. The resultant structures exhibit totally new combinations of strength and ductility to be achieved. In specific cases this also enables both the nature of the grain boundary structure and the spatial variation in structure to be controlled. In this presentation both the detailed microstructural features and their relation to the strength, work-hardening capacity and ductility will be discussed for a number of martensitic and austenitic steels.

  13. Bulk disk resonator based ultrasensitive mass sensor

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Davis, Zachary James

    2009-01-01

    In the framework of developing an innovative label-free sensor for multiarrayed biodetection applications, we present a novel bulk resonator based mass sensor. The sensor is a polysilicon disk which shows a Q-factor of 6400 in air at 68.8 MHz, resulting in mass resolutions down in the femtogram...... range. The sensor has been characterized in terms of sensitivity both for distributed mass detection, performing six consecutive depositions of e-beam evaporated Au, and localized mass detection, depositing approximately 7.5 pg of Pt/Ga/C three times consecutively with a Focused Ion Beam system....... The sensor has an extremely high distributed mass to frequency shift sensitivity of 60104 Hzcm2/¿g and shows a localized mass to frequency sensitivity up to 4405 Hz/pg with a localized mass resolution down to 15 fg. The device has been fabricated with a new microfabrication process that uses only two...

  14. Holographic bulk viscosity: GPR vs EO

    CERN Document Server

    Buchel, Alex; Kiritsis, Elias

    2011-01-01

    Recently Eling and Oz (EO) proposed a formula for the holographic bulk viscosity, in arXiv:1103.1657, derived from the null horizon focusing equation. This formula seems different from that obtained earlier by Gubser, Pufu and Rocha (GPR) in arXiv:0806.0407 calculated from the IR limit of the two-point function of the trace of the stress tensor. The two were shown to agree only for some simple scaling cases. We point out that the two formulae agree in two non-trivial holographic theories describing RG flows. The first is the strongly coupled N=2* gauge theory plasma. The second is the semi-phenomenological model of Improved Holographic QCD.

  15. A route to transparent bulk metals

    KAUST Repository

    Schwingenschlögl, Udo

    2012-07-23

    Hypothetical compounds based on a sapphire host are investigated with respect to their structural as well as electronic features. The results are obtained by electronic structure calculations within density functional theory and the generalized gradient approximation. A quarter of the Al atoms in Al 2O 3 is replaced by a 4d transition metal M ion, with d 0 to d 9 electronic configuration. We perform structure optimizations for all the compounds and analyze the electronic states. Due to the sizeable band gap of the Al 2O 3 host, we can identify promising candidates for transparent bulk metals. We explain the mechanisms leading to this combination of materials properties. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. DEPLOYMENT OF THE BULK TRITIUM SHIPPING PACKAGE

    Energy Technology Data Exchange (ETDEWEB)

    Blanton, P.

    2013-10-10

    A new Bulk Tritium Shipping Package (BTSP) was designed by the Savannah River National Laboratory to be a replacement for a package that has been used to ship tritium in a variety of content configurations and forms since the early 1970s. The BTSP was certified by the National Nuclear Safety Administration in 2011 for shipments of up to 150 grams of Tritium. Thirty packages were procured and are being delivered to various DOE sites for operational use. This paper summarizes the design features of the BTSP, as well as associated engineered material improvements. Fabrication challenges encountered during production are discussed as well as fielding requirements. Current approved tritium content forms (gas and tritium hydrides), are reviewed, as well as, a new content, tritium contaminated water on molecular sieves. Issues associated with gas generation will also be discussed.

  17. Tuneable film bulk acoustic wave resonators

    CERN Document Server

    Gevorgian, Spartak Sh; Vorobiev, Andrei K

    2013-01-01

    To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high.  Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the softwa...

  18. Universe Models with Negative Bulk Viscosity

    CERN Document Server

    Brevik, Iver

    2013-01-01

    The concept of negative temperatures has occasionally been used in connection with quantum systems. A recent example of this sort is reported in the paper of S. Braun et al. [Science 339,52 (2013)], where an attractively interacting ensemble of ultracold atoms is investigated experimentally and found to correspond to a negative-temperature system since the entropy decreases with increasing energy at the high end of the energy spectrum. As the authors suggest, it would be of interest to investigate whether a suitable generalization of standard cosmological theory could be helpful, in order to elucidate the observed accelerated expansion of the universe usually explained in terms of a positive tensile stress (negative pressure). In the present note we take up this basic idea and investigate a generalization of the standard viscous cosmological theory, not by admitting negative temperatures but instead by letting the bulk viscosity take negative values. Evidently, such an approach breaks standard thermodynamics,...

  19. Combustion of bulk titanium in oxygen

    Science.gov (United States)

    Clark, A. F.; Moulder, J. C.; Runyan, C. C.

    1975-01-01

    The combustion of bulk titanium in one atmosphere oxygen is studied using laser ignition and several analytical techniques. These were high-speed color cinematography, time and space resolved spectra in the visible region, metallography (including SEM) of specimens quenched in argon gas, X-ray and chemical product analyses, and a new optical technique, the Hilbert transform method. The cinematographic application of this technique for visualizing phase objects in the combustion zone is described. The results indicate an initial vapor phase reaction immediately adjacent to the molten surface but as the oxygen uptake progresses the evaporation approaches the point of congruency and a much reduced evaporation rate. This and the accumulation of the various soluble oxides soon drive the reaction zone below the surface where gas formation causes boiling and ejection of particles. The buildup of rutile cuts off the oxygen supply and the reaction ceases.

  20. Bulk semiconducting scintillator device for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.