Front and back side SIMS analysis of boron-doped delta-layer in diamond

Energy Technology Data Exchange (ETDEWEB)

Pinault-Thaury, M.-A., E-mail: marie-amandine.pinault-thaury@uvsq.fr [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Jomard, F. [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Mer-Calfati, C.; Tranchant, N.; Pomorski, M.; Bergonzo, P.; Arnault, J.-C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)

2017-07-15

Highlights: • Front and back side SIMS analysis of delta-layer boron-doped is a first for diamond. • Combination of front and back side depth profiling improves delta-layer analyses. • Sharp interfaces are evidenced on both sides of the delta-layer boron-doped diamond. • The growth of delta-layer boron doped diamond is now well controlled. - Abstract: Nowadays the availability of very thin diamond layers in the range of nanometers as well as the possibility to characterize such delta-layer structures are required for the field of photonics and spintronics, but also for the development of next generation high power devices involving boron doping. The fabrication of diamond structures with abrupt interfaces such as superlattices and quantum wells has been recently improved. A very accurate characterization is then essential even though the analysis of such structures is arduous and challenging. SIMS analyses are commonly used to obtain depth profiles of dopants. However, below 10 nm in thickness, SIMS induced ion mixing effects which are no longer negligible. Then the raw SIMS profile might differ from the real dopant profile. In this study, we have analyzed a diamond structure containing a thin boron epilayer, especially synthesized to achieve SIMS analysis on both sides and to overcome the effects of ion mixing. We evidence the ion mixing induced by primary ions. Such a structure is a delta diamond layer, comparable to classical boron-doped delta-layer in silicon. Our results show that the growth of boron-doped delta-layer in diamond is now well controlled in terms of thickness and interfaces.

Understanding anodic wear at boron doped diamond film electrodes

International Nuclear Information System (INIS)

Chaplin, Brian P.; Hubler, David K.; Farrell, James

2013-01-01

This research investigated the mechanisms associated with anodic wear of boron-doped diamond (BDD) film electrodes. Cyclic voltammetry (CV), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS) were used to measure changes in electrode response and surface chemistry as a function of the charge passed and applied current density. Density functional theory (DFT) modeling was used to evaluate possible reaction mechanisms. The initial hydrogen-terminated surface was electrochemically oxidized at lower potentials than water oxidation (≤ 1.83 V/SHE), and was not catalyzed by the hydrogen-terminated surface. In the region where water oxidation produces hydroxyl radicals (OH·), the hydrogen-terminated surface may also be oxidized by chemical reaction with OH·. Oxygen atoms became incorporated into the surface via reaction of carbon atoms with OH·, forming both C = O and C-OH functional groups, that were also detected by XPS measurements. Experimental and DFT modeling results indicate that the oxygenated diamond surface lowers the potential for activationless water oxidation from 2.74 V/SHE for the hydrogen terminated surface to 2.29 V/SHE for the oxygenated surface. Electrode wear was accelerated at high current densities (i.e., 500 mA cm −2 ), where SEM results indicated oxidation of the BDD film resulted in significant surface roughening. These results are supported by EIS measurements that document an increase in the double-layer capacitance as a function of the charge passed. DFT simulations provide a possible mechanism that explains the observed diamond oxidation. DFT simulation results indicate that BDD edge sites (=CH 2 ) can be converted to COOH functional groups, which are further oxidized via reactions with OH· to form H 2 CO 3(aq.) with an activation energy of 58.9 kJ mol −1

OSL and TL dosimeter characterization of boron doped CVD diamond films

Science.gov (United States)

Gonçalves, J. A. N.; Sandonato, G. M.; Meléndrez, R.; Chernov, V.; Pedroza-Montero, M.; De la Rosa, E.; Rodríguez, R. A.; Salas, P.; Barboza-Flores, M.

2005-04-01

Natural diamond is an exceptional prospect for clinical radiation dosimetry due to its tissue-equivalence properties and being chemically inert. The use of diamond in radiation dosimetry has been halted by the high market price; although recently the capability of growing high quality CVD diamond has renewed the interest in using diamond films as radiation dosimeters. In the present work we have characterized the dosimetric properties of diamond films synthesized by the HFCVD method. The thermoluminescence and the optically stimulated luminescence of beta exposed diamond sample containing a B/C 4000 ppm doping presents excellent properties suitable for dosimetric applications with β-ray doses up to 3.0 kGy. The observed OSL and TL performance is reasonable appropriate to justify further investigation of diamond films as dosimeters for ionizing radiation, specially in the radiotherapy field where very well localized and in vivo and real time radiation dose applications are essential.

Characterization of boron doped nanocrystalline diamonds

International Nuclear Information System (INIS)

Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

2008-01-01

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

Energy Technology Data Exchange (ETDEWEB)

Kapilashrami, M.; Zegkinoglou, I. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Törndahl, T.; Fjällström, V. [Ångström Solar Center, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Lischner, J. [Department of Physics, University of California, Berkeley, California 94720 (United States); Louie, Steven G. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States); Hamers, R. J.; Zhang, L. [Department of Chemistry, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Guo, J.-H. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Himpsel, F. J., E-mail: fhimpsel@wisc.edu [Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)

2014-10-14

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Energy Technology Data Exchange (ETDEWEB)

Sartori, Andre F.; Fischer, Martin; Gsell, Stefan; Schreck, Matthias [Universitaet Augsburg, Institut fuer Physik, 86135 Augsburg (Germany)

2012-09-15

In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO{sub 2} as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of {proportional_to}50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N{sub 2} and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N{sub 2} concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 C contain high intrinsic stress that varies from -2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Sequential Electrodeposition of Platinum-Ruthenium at Boron-Doped Diamond Electrodes for Methanol Oxidation

Directory of Open Access Journals (Sweden)

Ileana González-González

2011-01-01

Full Text Available Sequential electrodeposition of Pt and Ru on boron-doped diamond (BDD films, in 0.5 M H2SO4 by cyclic voltammetry, has been prepared. The potential cycling, in the aqueous solutions of the respective metals, was between 0.00 and 1.00 V versus Ag/AgCl. The catalyst composites, Pt and PtRu, deposited on BDD film substrates, were tested for methanol oxidation. The modified diamond surfaces were also characterized by scanning electron microscopy-X-ray fluorescence-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The scanning Auger electron spectroscopy mapping showed the ruthenium signal only in areas where platinum was electrodeposited. Ruthenium does not deposit on the oxidized diamond surface of the boron-doped diamond. Particles with 5–10% of ruthenium with respect to platinum exhibited better performance for methanol oxidation in terms of methanol oxidation peak current and chronoamperometric current stability. The electrogenerated •OH radicals on BDD may interact with Pt surface, participating in the methanol oxidation as shown in oxidation current and the shift in the peak position. The conductive diamond surface is a good candidate as the support for the platinum electrocatalyst, because it ensures catalytic activity, which compares with the used carbon, and higher stability under severe anodic and cathodic conditions.

Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

International Nuclear Information System (INIS)

Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

2011-01-01

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

Surface structuring of boron doped CVD diamond by micro electrical discharge machining

Science.gov (United States)

Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

2018-05-01

Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

International Nuclear Information System (INIS)

Kapilashrami, M.; Zegkinoglou, I.; Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S.; Törndahl, T.; Fjällström, V.; Lischner, J.; Louie, Steven G.; Hamers, R. J.; Zhang, L.; Guo, J.-H.; Himpsel, F. J.

2014-01-01

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se 2 (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO = VBM CIGS – VBM diamond  = 0.3 eV ± 0.1 eV at the CIGS/Diamond interface and 0.0 eV ± 0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

OpenAIRE

Yu, Yuan; Zhou, Yanli; Wu, Liangzhuan; Zhi, Jinfang

2012-01-01

Boron-doped diamond (BDD) thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC), carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitiv...

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

Science.gov (United States)

Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

2015-09-01

Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

CERN Document Server

He, X M; Peters, A M; Taylor, B; Nastasi, M

2002-01-01

Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

Science.gov (United States)

Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

2018-05-01

Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

International Nuclear Information System (INIS)

Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

2011-01-01

Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

Study of the effects of focused high-energy boron ion implantation in diamond

Science.gov (United States)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Morphological and electrochemical properties of boron-doped diamond films on carbon cloths with enhanced surface area

International Nuclear Information System (INIS)

Silva, L.L.G.; Ferreira, N.G.; Corat, E.J.

2008-01-01

The electrochemical properties of doped diamond electrodes (10 17 -10 19 B cm -3 ) grown on carbon fiber cloths in H 2 SO 4 0.1 mol L -1 electrolyte were investigated. Cyclic voltammograms of B-doped diamond/carbon fiber cloth and carbon fiber cloth electrodes showed that both kinds of electrodes possess similar working potential windows of about 2.0 V. The electrode capacitance was determined by impedance spectroscopy and chronopotentiometry measurements and very close values were obtained. The capacitance values of the diamond film on carbon fiber cloths were 180 times higher than the ones of diamond films on Si. In this paper we have also discussed the capacitance frequency dependence of diamond/carbon cloth electrodes

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

Directory of Open Access Journals (Sweden)

V. Petrák

2011-01-01

Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

Energy Technology Data Exchange (ETDEWEB)

Achatz, Philipp

2009-05-15

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

International Nuclear Information System (INIS)

Achatz, Philipp

2009-01-01

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

Science.gov (United States)

Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

2018-05-01

Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

The processing of heteroepitaxial thin-film diamond for electronic applications

International Nuclear Information System (INIS)

McGrath, J.

1998-09-01

Thin film diamond is of particular interest because of its wide applicability, including its potential use in high temperature electronics. This thesis describes a study of some of the processing stages required to exploit thin film diamond as an electronic device. Initial experiments were carried out to optimise bi-metallic contact schemes on orientated diamond film using electrical measurements and chemical analysis. Temperature stability was also investigated and it was concluded that the most favourable ohmic contact scheme is aluminium-on-titanium. Further electrical measurements confirmed that the contribution of resistance made by the contacts themselves to the metal/diamond/metal system overall was acceptably low, specifically 6 Ω.cm 2 for an undoped diamond system and less than 3 x 10 -6 Ω.cm 2 for boron doped diamond. To improve the as-grown resistivity of diamond films, an oxygen/argon plasma etch process was applied. The input parameters of the plasma system were optimised to give the maximum achievable resistivity of 4 x 10 11 Ω.cm. This was attained using a statistical design procedure via analysis of resistivity and etch rate outputs. Having optimised post growth treatment and contact metallisation, undoped and doped orientated diamond films were characterised via voltage and temperature dependencies. It was concluded that the dominant charge transport mechanisms for undoped diamond, nitrogen and boron doped diamond were variable range hopping at low temperatures up to 523 K and grain boundary effects. At higher temperatures, valence or impurity band conduction appeared to be the probable mechanisms with activation energies of 0.23 eV for nitrogen doped diamond and 0.08 eV for boron doped diamond. Preliminary experiments electrical properties of diamond and initial results suggested the presence of a high density of recombination centres. The final stage of experimental research initiated a study of direct electron beam writing lithography to

Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond

Czech Academy of Sciences Publication Activity Database

Šopík, Břetislav

2009-01-01

Roč. 11, č. 10 (2009), 103026/1-103026/10 ISSN 1367-2630 R&D Projects: GA AV ČR IAA100100712 Grant - others:GAČR(CZ) GA202/07/0597 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * boron-doped diamond Subject RIV: BE - Theoretical Physics Impact factor: 3.312, year: 2009

Electrochemical treatment of wastewaters containing 4-chlororesorcinol using boron doped diamond anodes

International Nuclear Information System (INIS)

Nasr, B.; Abdelatif, G.

2009-01-01

The electrochemical oxidation of aqueous wastes polluted with 4-chlororesorcinol has been studied on boron-doped diamond electrodes on acidic medium. The voltammetric results showed that in the potential region where the supporting electrolyte is stable, reactions occur, resulting in the loss of activity due to electrode fouling. Galvanostatic electrolysis study showed that the oxidation of these wastes in single-compartment electrochemical flow cell with boron doped diamond anodes deal to the complete mineralization of the organics but is no indication of electrode fouling. Resorcinol, 1,2,4-trihydroxybenzene, benzoquinone, maleic, fumaric, and oxalic acids have been detected as soluble organics and chlorides (Cl - ) and hypochlorites (ClO - ) as mineral products during the electrolysis of 4-chlororesorcinol. The electrochemical oxidation of 4-chlororesorcinol consists of a sequence of steps: Release of Cl and/or hydroxylation of the aromatic ring; formation of quinonic compounds; oxidative opening of aromatic ring to form carboxylic acids; and oxidation of carboxylic acids to carbon dioxide. Both, direct oxidation at boron doped diamond surface and mediated oxidation by powerful oxidants electrogenerated from electrolyte oxidation at anode surface are involved in these stages. (author)

Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility.

Science.gov (United States)

Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

2017-01-01

Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices.

Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

Science.gov (United States)

Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

2014-02-01

The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluorination of Boron-Doped Diamond Film Electrodes for Minimization of Perchlorate Formation.

Science.gov (United States)

Gayen, Pralay; Chaplin, Brian P

2017-08-23

This research investigated the effects of surface fluorination on both rates of organic compound oxidation (phenol and terephthalic acid (TA)) and ClO 4 - formation at boron-doped diamond (BDD) film anodes at 22 °C. Different fluorination methods (i.e., electrochemical oxidation with perfluorooctanoic acid (PFOA), radio frequency plasma, and silanization) were used to incorporate fluorinated moieties on the BDD surface, which was confirmed by X-ray photoelectron spectroscopy (XPS). The silanization method was found to be the most effective fluorination method using a 1H,1H,2H,2H-perfluorodecyltrichlorosilane precursor to form a self-assembled monolayer (SAM) on the oxygenated BDD surface. The ClO 4 - formation decreased from rates of 0.45 ± 0.03 mmol m -2 min -1 during 1 mM NaClO 3 oxidation and 0.28 ± 0.01 mmol m -2 min -1 during 10 mM NaCl oxidation on the BDD electrode to below detectable levels (layer on the BDD surface that inhibited charge transfer via steric hindrance and hydrophobic effects. The surface coverages and thicknesses of the fluorinated films controlled the charge transfer rates, which was confirmed by estimates of film thicknesses using XPS and density functional theory simulations. The aliphatic silanized electrode also showed very high stability during OH • production. Perchlorate formation rates were below the detection limit (<0.12 μmoles m -2 min -1 ) for up to 10 consecutive NaClO 3 oxidation experiments.

Boron-doped nanocrystalline diamond electrodes for neural interfaces: in vivo biocompatibility evaluation

Czech Academy of Sciences Publication Activity Database

Alcaide, M.; Taylor, Andrew; Fjorback, M.; Zachar, V.; Pennisi, C.P.

2016-01-01

Roč. 10, Mar (2016), 1-9, č. článku 87. ISSN 1662-453X Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * neuroprosthetic interfaces * neural electrodes * boron-doped diamond * titanium nitride * foreign body reaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.566, year: 2016

Mercury-free sono-electroanalytical detection of lead in human blood by use of bismuth-film-modified boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Kruusma, Jaanus [Institute of Physical Chemistry, University of Tartu, Jakobi 2, 51013, Tartu (Estonia); Banks, Craig E.; Compton, Richard G. [Physical and Theoretical Chemistry Laboratory, Oxford University, South Parks Road, OX1 3QZ, Oxford (United Kingdom)

2004-06-01

We report the electroanalytical determination of lead by anodic stripping voltammetry at in-situ-formed, bismuth-film-modified, boron-doped diamond electrodes. Detection limits in 0.1 mol L{sup -1} nitric acid solution of 9.6x10{sup -8} mol L{sup -1} (0.2 ppb) and 1.1x10{sup -8} mol L{sup -1} (2.3 ppb) were obtained after 60 and 300 s deposition times, respectively. An acoustically assisted deposition procedure was also investigated and found to result in improved limits of detection of 2.6 x 10{sup -8} mol L{sup -1} (5.4 ppb) and 8.5 x 10{sup -10} mol L{sup -1} (0.18 ppb) for 60 and 300 s accumulation times, respectively. Furthermore, the sensitivity obtained under quiescent and insonated conditions increased from 5.5 (quiescent) to 76.7 A mol{sup -1} L (insonated) for 60 s accumulation and from 25.8 (quiescent) to 317.6 A mol{sup -1} L (insonated) for 300 s accumulation. Investigation of the use of ultrasound with diluted blood revealed detection limits of the order of 10{sup -8} mol L{sup -1} were achievable with excellent inter- and intra-reproducibility and sensitivity of 411.9 A mol{sup -1} L. For the first time, electroanalytical detection of lead in diluted blood is shown to be possible by use of insonated in-situ-formed bismuth-film-modified boron-doped diamond electrodes. This method is a rapid, sensitive, and non-toxic means of clinical sensing of lead in whole human blood. (orig.)

Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

International Nuclear Information System (INIS)

Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

2011-01-01

A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

Factors influencing voltammetric reduction of 5-nitroquinoline at boron-doped diamond electrodes

Czech Academy of Sciences Publication Activity Database

Vosáhlová, J.; Zavázalová, J.; Petrák, Václav; Schwarzová-Pecková, K.

2016-01-01

Roč. 147, č. 1 (2016), s. 21-29 ISSN 0026-9247 Institutional support: RVO:68378271 Keywords : voltammetry * boron-doped diamond electrode * boron concentration * reduction * electrochemistry Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.282, year: 2016

The Immunosuppressive drug – Rapamycin – Electroanalytical Sensing Using Boron- Doped Diamond electrode

International Nuclear Information System (INIS)

Stanković, Dalibor M.; Kalcher, Kurt

2015-01-01

Graphical abstract: Display Omitted -- Abstract: This paper presents for the first time the study of electrochemical behavior of well known immunosuppressant drug – rapamycin (sirolimus) using boron-doped diamond electrode. Rapamycin provided single and oval-shaped oxidation peak at +1.1 V vs. Ag/AgCl electrode in Britton–Robinson buffer solution at pH 3 confirming highly irreversible behavior of analyte at boron-doped diamond electrode. A differential pulse voltammetry was used for quantification of tested drug under the optimum experimental conditions. The calibration curve was linear over the range from 0.5 to 19.5 μM (R 2 = 0.9976) with detection limit of 0.22 μM. Repeatability of ten successfully measurements of three different concentrations (5, 10 and 15 μM) was 2.5, 1.9 and 1,7 %, respectively. Influence of most common biomolecules presented in urine samples was evaluated. The suggested analytical methodology was successfully applied for determination of rapamycin in four urine samples with excellent recoveries. The developed approach could be beneficial in analysis of rapamycin in biological samples using boron-doped diamond electrode as up-to-date electrochemical sensor and could represent inexpensive analytical alternative to separation methods

Measurement of the magnetic penetration depth in p-doped superconducting diamond films

Energy Technology Data Exchange (ETDEWEB)

Fuchs, Lorenz; Brunner, Markus C.P.; Schneider, Ina; Kronfeldner, Klaus [University of Regensburg (Germany); Bousquet, Jessica; Bustarret, Etienne; Strunk, Christoph [Institut Neel, Grenoble (France)

2016-07-01

Boron-doped diamond becomes superconducting once a critical doping concentration of 4.5 x 10{sup 20} cm{sup -3} is reached. Mutual inductance measurements with a two-coil setup have been performed to determine the magnetic penetration depth λ(T), which is a measure for the superfluid stiffnes θ ∝ 1/λ{sup 2}(T). Two superconducting p-doped diamond films with thicknesses of 145 nm and 345 nm were investigated. At low temperatures these values agree reasonably with the values expected within BCS-theory using T{sub c}, carrier density and mean free path determined from electric transport measurements. Magnetic penetration depths of 3.7 μm for the thinner and 2.6 μm for the thicker film have been found. λ decreases and accordingly θ increases with increasing film thickness. On the other hand, the superfluid stiffness drops by a factor of 2 or even more at T{sub c}/2, i.e., much faster than expected from BCS-theory, but remains finite between T{sub c}/2 < T < T{sub c}. At present it is unclear, whether this behavior results from the proliferation of phase fluctuations already far below T{sub c} or from a spatial inhomogeneity of the films.

Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

Energy Technology Data Exchange (ETDEWEB)

Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)

2016-07-30

Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

Synthesis and characterization of boron incorporated diamond-like carbon thin films

International Nuclear Information System (INIS)

Zhang, L.L.; Yang, Q.; Tang, Y.; Yang, L.; Zhang, C.; Hu, Y.; Cui, X.

2015-01-01

Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B 4 C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B 4 C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp 3 bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp 3 bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp 3 bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films

Electrochemical mineralization pathway of quinoline by boron-doped diamond anodes.

Science.gov (United States)

Wang, Chunrong; Ma, Keke; Wu, Tingting; Ye, Min; Tan, Peng; Yan, Kecheng

2016-04-01

Boron-doped diamond anodes were selected for quinoline mineralization, and the resulting intermediates, phenylpropyl aldehyde, phenylpropionic acid, and nonanal were identified and followed during quinoline oxidation by gas chromatography-mass spectrometry and high-performance liquid chromatography. The evolutions of formic acid, acetic acid, oxalic acid, NO2(-), NO3(-), and NH4(+) were quantified. A new reaction pathway for quinoline mineralization by boron-doped diamond anodes has been proposed, where the pyridine ring in quinoline is cleaved by a hydroxyl radical giving phenylpropyl aldehyde and NH4(+). Phenylpropyl aldehyde is quickly oxidized into phenylpropionic acid, and the benzene ring is cleaved giving nonanal. This is further oxidized to formic acid, acetic acid, and oxalic acid. Finally, these organic intermediates are mineralized to CO2 and H2O. NH4(+) is also oxidized to NO2(-) and on to NO3(-). The results will help to gain basic reference for clearing intermediates and their toxicity. Copyright © 2016 Elsevier Ltd. All rights reserved.

Assessment of Electrodes Prepared from Wafers of Boron-doped Diamond for the Electrochemical Oxidation of Waste Lubricants

International Nuclear Information System (INIS)

Taylor, G.T.; Sullivan, I.A.; Newey, A.W.E.

2006-01-01

Electrochemical oxidation using boron-doped diamond electrodes is being investigated as a treatment process for radioactively contaminated oily wastes. Previously, it was shown that electrodes coated with a thin film of diamond were able to oxidise a cutting oil but not a mineral oil. These tests were inconclusive, because the electrodes lost their diamond coating during operation. Accordingly, an electrode prepared from a 'solid' wafer of boron-doped diamond is being investigated to determine whether it will oxidise mineral oils. The electrode has been tested with sucrose, a cutting oil and an emulsified mineral oil. Before and after each test, the state of the electrode was assessed by cyclic voltammetry with the ferro/ferricyanide redox couple. Analysis of the cyclic voltammogram suggested that material accumulated on the surface of the electrode during the tests. The magnitude of the effect was in the order: - emulsified mineral oil > cutting oil > sucrose. Despite this, the results indicated that the electrode was capable of oxidising the emulsified mineral oil. Confirmatory tests were undertaken in the presence of alkali to trap the carbon dioxide, but they had to be abandoned when the adhesive holding the diamond in the electrode was attacked by the alkali. Etching of the diamond wafer was also observed at the end of the tests. Surface corrosion is now regarded as an intrinsic part of the electrochemical oxidation on diamond, and it is expected that the rate of attack will determine the service life of the electrodes. (authors)

Electron field emission from boron doped microcrystalline diamond

International Nuclear Information System (INIS)

Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

2007-01-01

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

2009-12-31

The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

Metallization and superconductivity in a multizone doped semiconductor: boron-doped diamond

International Nuclear Information System (INIS)

Loktev, V.M.; Pogorelov, Yu.G.

2005-01-01

Within the framework of Anderson's s - d hybride model, metallization of a semiconductor at collectivization of impurity states is discussed. Taking in mind the description of boron-doped diamond CB x , the model is generalized for the case of the multiband initial spectrum and cluster acceptor states, due to the pairs of the nearest neighbor impurities ('impurity dumbbells'). The parameters of the calculated band of collective impurity states are compared to those observed in metallized and superconducting CB x

Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

Science.gov (United States)

Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

2017-12-01

We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy

Science.gov (United States)

Nakamura, Jin; Kabasawa, Eiki; Yamada, Nobuyoshi; Einaga, Yasuaki; Saito, Daisuke; Isshiki, Hideo; Yugo, Shigemi; Perera, Rupert C. C.

2004-12-01

X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic ( ˜0.1at.% B, B-diamond) and semiconducting ( ˜0.03at.% B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of 185.3eV , and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond: EV=283.9eV . C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (Ea=0.37eV) estimated from the temperature dependence of the conductivity; namely, the change in C2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is ascribed mainly to the electronic structure of C2p near the Fermi level. The observed XES spectra are compared with the discrete variational Xα ( DVXα ) cluster calculation. The DVXα result supports the strong hybridization between B2p and C2p observed in XAS and XES spectra, and suggests that the small amount of boron (⩽0.1at.%) in diamond occupies the substitutional site rather than interstitial site.

Hydrogen doped thin film diamond. Properties and application for electronic devices

International Nuclear Information System (INIS)

Looi, H.J.

2000-01-01

The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode

International Nuclear Information System (INIS)

Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes

2012-01-01

This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L -1 Na 2 SO 4 solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

NARCIS (Netherlands)

Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

2013-01-01

Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy

Properties of planar structures based on Policluster films of diamond and AlN

Science.gov (United States)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

Directory of Open Access Journals (Sweden)

Yuan Yu

2012-01-01

Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

Influence of boron content on the morphological, spectral, and electroanalytical characteristics of anodically oxidized boron-doped diamond electrodes

Czech Academy of Sciences Publication Activity Database

Schwarzová-Pecková, K.; Vosáhlová, J.; Barek, J.; Šloufová, I.; Pavlova, Ewa; Petrák, Václav; Zavázalová, J.

2017-01-01

Roč. 243, 20 July (2017), s. 170-182 ISSN 0013-4686 R&D Projects: GA TA ČR(CZ) TE01020118 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : 2-aminobiphenyl * boron content * boron-doped diamond Subject RIV: CD - Macromolecular Chemistry; CG - Electrochemistry (FZU-D) OBOR OECD: Polymer science; Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (FZU-D) Impact factor: 4.798, year: 2016

Plasma etching treatment for surface modification of boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Kondo, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Ito, Hiroyuki [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Kusakabe, Kazuhide [Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Ohkawa, Kazuhiro [Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan); Fujishima, Akira [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012 (Japan); Kawai, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan)]. E-mail: kawai@ci.kagu.tus.ac.jp

2007-03-01

Boron-doped diamond (BDD) thin film surfaces were modified by brief plasma treatment using various source gases such as Cl{sub 2}, CF{sub 4}, Ar and CH{sub 4}, and the electrochemical properties of the surfaces were subsequently investigated. From X-ray photoelectron spectroscopy analysis, Cl and F atoms were detected on the BDD surfaces after 3 min of Cl{sub 2} and CF{sub 4} plasma treatments, respectively. From the results of cyclic voltammetry and electrochemical AC impedance measurements, the electron-transfer rate for Fe(CN){sub 6} {sup 3-/4-} and Fe{sup 2+/3+} at the BDD electrodes was found to decrease after Cl{sub 2} and CF{sub 4} plasma treatments. However, the electron-transfer rate for Ru(NH{sub 3}){sub 6} {sup 2+/3+} showed almost no change after these treatments. This may have been related to the specific interactions of surface halogen (C-Cl and C-F) moieties with the redox species because no electrical passivation was observed after the treatments. In addition, Raman spectroscopy showed that CH{sub 4} plasma treatment of diamond surfaces formed an insulating diamond-like carbon thin layer on the surfaces. Thus, by an appropriate choice of plasma source, short-duration plasma treatments can be an effective way to functionalize diamond surfaces in various ways while maintaining a wide potential window and a low background current.

Electrochemical evaluation and determination of antiretroviral drug fosamprenavir using boron-doped diamond and glassy carbon electrodes.

Science.gov (United States)

Gumustas, Mehmet; Ozkan, Sibel A

2010-05-01

Fosamprenavir is a pro-drug of the antiretroviral protease inhibitor amprenavir and is oxidizable at solid electrodes. The anodic oxidation behavior of fosamprenavir was investigated using cyclic and linear sweep voltammetry at boron-doped diamond and glassy carbon electrodes. In cyclic voltammetry, depending on pH values, fosamprenavir showed one sharp irreversible oxidation peak or wave depending on the working electrode. The mechanism of the oxidation process was discussed. The voltammetric study of some model compounds allowed elucidation of the possible oxidation mechanism of fosamprenavir. The aim of this study was to determine fosamprenavir levels in pharmaceutical formulations and biological samples by means of electrochemical methods. Using the sharp oxidation response, two voltammetric methods were described for the determination of fosamprenavir by differential pulse and square-wave voltammetry at the boron-doped diamond and glassy carbon electrodes. These two voltammetric techniques are 0.1 M H(2)SO(4) and phosphate buffer at pH 2.0 which allow quantitation over a 4 x 10(-6) to 8 x 10(-5) M range using boron-doped diamond and a 1 x 10(-5) to 1 x 10(-4) M range using glassy carbon electrodes, respectively, in supporting electrolyte. All necessary validation parameters were investigated and calculated. These methods were successfully applied for the analysis of fosamprenavir pharmaceutical dosage forms, human serum and urine samples. The standard addition method was used in biological media using boron-doped diamond electrode. No electroactive interferences from the tablet excipients or endogenous substances from biological material were found. The results were statistically compared with those obtained through an established HPLC-UV technique; no significant differences were found between the voltammetric and HPLC methods.

Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping

Czech Academy of Sciences Publication Activity Database

Alcaide, M.; Papaioannou, S.; Taylor, Andrew; Fekete, Ladislav; Gurevich, L.; Zachar, V.; Pennisi, C.P.

2016-01-01

Roč. 27, č. 5 (2016), s. 90-1-12 ISSN 0957-4530 R&D Projects: GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : protein adsorption * fibroblasts adhesion * nanocrystalline diamond * boron doping * topography Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.325, year: 2016

Thermal shock resistance of thick boron-doped diamond under extreme heat loads

NARCIS (Netherlands)

De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

2011-01-01

Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH

Electrochemical protein cleavage in a microfluidic cell with integrated boron doped diamond electrodes

NARCIS (Netherlands)

van den Brink, Floris Teunis Gerardus; Zhang, Tao; Ma, Liwei; Odijk, Mathieu; Olthuis, Wouter; Permentier, Hjalmar P.; Bischoff, Rainer P.H.; van den Berg, Albert

2015-01-01

We present a microfluidic electrochemical cell with integrated boron doped diamond (BDD) electrodes which is designed for high electrochemical conversion efficiencies. With our newest developments, we aim to exploit the benefits of BDD as a novel electrode material to conduct tyrosine- and

Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

International Nuclear Information System (INIS)

Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

2016-01-01

Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

International Nuclear Information System (INIS)

Elsherif, O S; Vernon-Parry, K D; Evans-Freeman, J H; May, P W

2012-01-01

High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on the electronic states in polycrystalline chemical vapour deposition diamond thin films grown on silicon by the hot filament method. A combination of high-resolution LDLTS and direct-capture cross-sectional measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. Two hole traps, E1 (0.29 eV) and E2 (0.53 eV), were found in a film with a boron content of 1 × 10 19 cm −3 . Both these levels and an additional level, E3 (0.35 eV), were found when the B content was increased to 4 × 10 19 cm −3 . Direct capture cross-sectional measurements of levels E1 and E2 show an unusual dependence on the fill-pulse duration which is interpreted as possibly indicating that the levels are part of an extended defect. The E3 level found in the more highly doped film consisted of two closely spaced levels, both of which show point-like defect characteristics. The E1 level may be due to B-related extended defects within the grain boundaries, whereas the ionization energy of the E2 level is in agreement with literature values from ab initio calculations for B–H complexes. We suggest that the E3 level is due to isolated B-related centres in bulk diamond. (paper)

Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

Science.gov (United States)

Shakhov, Fedor M.; Abyzov, Andrey M.; Takai, Kazuyuki

2017-12-01

Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C5H8(OH)4 and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6-80 nm and the increase in diamond lattice parameter by 0.02-0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm-1 to 1290 cm-1 without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω-1 cm-1. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H2O, CH4, CO, CO2, etc.), as well as byproducts formation (B2O3, B4C).

Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro- and nanocrystalline diamond films

NARCIS (Netherlands)

Buijnsters, J.G.; Tsigkourakos, M.C.; Hantschel, T.; Gomes, F.O.V.; Nuytten, T.; Favia, P.; Bender, H; Arstila, K.; Celis, JP; Vandervorst, W

2016-01-01

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped

Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

Energy Technology Data Exchange (ETDEWEB)

Qi, Yao; Long, Hangyu [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Ma, Li, E-mail: marycsupm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Quiping, E-mail: qiupwei@csu.edu.cn [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Li, Site [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Hu, Jingyuan [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Liu, Peizhi [Key laboratory of interface science and engineering in advanced materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,PR China (China); Wang, Yijia [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Meng, Lingcong [Department of Chemistry, University of Warwick, Coventry, West Midlands CV4 7AL (United Kingdom)

2016-12-30

Highlights: • BDD electrodes with different thickness have been fabricated. • BDD electrodes are used for simultaneous detection of DA and AA. • Anodic pretreatment enhance the separation of DA and AA oxidation peak potential. • Thicker BDD electrode show better performance for DA detection coexisting with AA. - Abstract: In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe{sub 3} (CN) {sub 6}]{sup 3−/4−} redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

International Nuclear Information System (INIS)

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

2013-01-01

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

Science.gov (United States)

Halpern, Jeffrey M; Martin, Heidi B

2014-02-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Limat, Meriadec; El Roustom, Bahaa [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland); Jotterand, Henri [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Physics of the Complex Matter, CH-1015 Lausanne (Switzerland); Foti, Gyoergy [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)], E-mail: gyorgy.foti@epfl.ch; Comninellis, Christos [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)

2009-03-30

A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate.

Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

International Nuclear Information System (INIS)

Limat, Meriadec; El Roustom, Bahaa; Jotterand, Henri; Foti, Gyoergy; Comninellis, Christos

2009-01-01

A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate

Insight into boron-doped diamond Raman spectra characteristic features

Czech Academy of Sciences Publication Activity Database

Mortet, Vincent; Vlčková Živcová, Zuzana; Taylor, Andrew; Frank, Otakar; Hubík, Pavel; Trémouilles, D.; Jomard, F.; Barjon, J.; Kavan, Ladislav

2017-01-01

Roč. 115, May (2017), s. 279-284 ISSN 0008-6223 R&D Projects: GA ČR GA13-31783S; GA MŠk 7AMB16FR004 Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * boron doping * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 6.337, year: 2016

Visible-light sensitization of boron-doped nanocrystalline diamond through non-covalent surface modification

Czech Academy of Sciences Publication Activity Database

Krýsová, Hana; Vlčková Živcová, Zuzana; Bartoň, Jan; Petrák, Václav; Nesladek, M.; Cígler, Petr; Kavan, Ladislav

2015-01-01

Roč. 17, č. 2 (2015), s. 1165-1172 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : nanocrystallines * visible-light sensitization * boron-doped diamond Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.449, year: 2015

Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

Science.gov (United States)

Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

2018-06-01

Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2009-01-01

Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

International Nuclear Information System (INIS)

Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

2015-01-01

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

Energy Technology Data Exchange (ETDEWEB)

Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

2015-04-15

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

Science.gov (United States)

Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

2015-12-01

We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

Directory of Open Access Journals (Sweden)

Alejandro Medel

2012-01-01

Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Zhang Jing

2014-01-01

Full Text Available The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S codoped diamond films grown on high-temperature and high-pressure (HTHP diamond and Si substrates were investigated using atom force microscopy (AFM, scanning tunneling microscopy (STM, secondary ion mass spectroscopy (SIMS, and current imaging tunneling spectroscopy (CITS measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

International Nuclear Information System (INIS)

Kavan, Ladislav; Vlckova Zivcova, Zuzana; Petrak, Vaclav; Frank, Otakar; Janda, Pavel; Tarabkova, Hana; Nesladek, Milos; Mortet, Vincent

2015-01-01

Highlights: • B-doped diamond is nanostructured by corrosion-driven modifications occurring at carbonaceous impurity sites (sp 2 -carbons). • The electrochemical oxidation partly transforms a hydrogen-terminated diamond surface to O-terminated one, but the electrocatalytic activity of plasmatically O-terminated diamond is not achieved. • In contrast to all usual sp 2 carbons, the Raman spectra of B-doped diamond electrodes do not change upon electrochemical charging/discharging. - Abstract: Comparative studies of boron-doped diamonds electrodes (polycrystalline, single-crystalline, H-/O-terminated, and with different sp 3 /sp 2 ratios) indicate morphological modifications of diamond which are initiated by corrosion at nanoscale. In-situ electrochemical AFM imaging evidences that the textural changes start at non-diamond carbonaceous impurity sites treated at high positive potentials (>2.2 V vs. Ag/AgCl). The primary perturbations subsequently develop into sub-micron-sized craters. Raman spectroscopy shows that the primary erosion site is graphite-like (sp 2 -carbon), which is preferentially removed by anodic oxidation. Other non-diamond impurity, viz. tetrahedral amorphous carbon (t-aC), is less sensitive to oxidative decomposition. The diamond-related Raman features, including the B-doping-assigned modes, are intact during reversible electrochemical charging/discharging, which is a salient difference from all usual sp 2 -carbons. The electrochemical oxidation partly transforms a hydrogen-terminated diamond surface to O-terminated one, but the electrocatalytic activity of plasmatically O-terminated diamond is not achieved for a model redox couple, Fe 3+/2+ . Electrochemical impedance spectra were fitted to six different equivalent circuits. The determination of acceptor concentrations is feasible even for highly-doped diamond electrodes.

Nanopores creation in boron and nitrogen doped polycrystalline graphene: A molecular dynamics study

Science.gov (United States)

Izadifar, Mohammadreza; Abadi, Rouzbeh; Nezhad Shirazi, Ali Hossein; Alajlan, Naif; Rabczuk, Timon

2018-05-01

In the present paper, molecular dynamic simulations have been conducted to investigate the nanopores creation on 10% of boron and nitrogen doped polycrystalline graphene by silicon and diamond nanoclusters. Two types of nanoclusters based on silicon and diamond are used to investigate their effect for the fabrication of nanopores. Therefore, three different diameter sizes of the clusters with five kinetic energies of 10, 50, 100, 300 and 500 eV/atom at four different locations in boron or nitrogen doped polycrystalline graphene nanosheets have been perused. We also study the effect of 3% and 6% of boron doped polycrystalline graphene with the best outcome from 10% of doping. Our results reveal that the diamond cluster with diameter of 2 and 2.5 nm fabricates the largest nanopore areas on boron and nitrogen doped polycrystalline graphene, respectively. Furthermore, the kinetic energies of 10 and 50 eV/atom can not fabricate nanopores in some cases for silicon and diamond clusters on boron doped polycrystalline graphene nanosheets. On the other hand, silicon and diamond clusters fabricate nanopores for all locations and all tested energies on nitrogen doped polycrystalline graphene. The area sizes of nanopores fabricated by silicon and diamond clusters with diameter of 2 and 2.5 nm are close to the actual area size of the related clusters for the kinetic energy of 300 eV/atom in all locations on boron doped polycrystalline graphene. The maximum area and the average maximum area of nanopores are fabricated by the kinetic energy of 500 eV/atom inside the grain boundary at the center of the nanosheet and in the corner of nanosheet with diameters of 2 and 3 nm for silicon and diamond clusters on boron and nitrogen doped polycrystalline graphene.

Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

Czech Academy of Sciences Publication Activity Database

Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Kavan, Ladislav

2015-01-01

Roč. 55, MAY 2015 (2015), s. 70-76 ISSN 0925-9635 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Boron doped diamond * Electrochemical impedance spectroscopy * Aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 2.125, year: 2015

Polycrystalline boron-doped diamond electrodes for electrocatalytic and electrosynthetic applications.

Science.gov (United States)

Ivandini, Tribidasari A; Einaga, Yasuaki

2017-01-24

Boron-doped diamond (BDD) electrodes are recognized as being superior to other electrode materials due to their outstanding chemical and dimensional stability, their exceptionally low background current, the extremely wide potential window for water electrolysis that they have, and their excellent biocompatibility. However, whereas these properties have been utilized in the rapid development of electroanalytical applications, very few studies have been done in relation to their applications in electrocatalysis or electrosynthesis. In this report, following on from reports of the electrosynthesis of various products through anodic and cathodic reactions using BDD electrodes, the potential use of these electrodes in electrosynthesis is discussed.

Potential and pH dependence of photocurrent transients for boron-doped diamond electrodes in aqueous electrolyte

International Nuclear Information System (INIS)

Green, S.J.; Mahe, L.S.A.; Rosseinsky, D.R.; Winlove, C.P.

2013-01-01

Using illumination at energies below the intrinsic diamond energy gap, photocurrent transients have been recorded for boron-doped diamond (BDD) as an electrode in an aqueous electrolyte of 0.1 M KH 2 PO 4 . The commercially-supplied BDD was in the form of a free-standing, polycrystalline film grown by chemical vapour deposition (CVD), with a boron acceptor concentration of ≥10 20 cm −3 . The effects of mechanical polishing of the BDD, of electrochemical hydrogen evolution and of electrochemical oxygen evolution (in 0.1 M KH 2 PO 4 ), on the potential dependence of the photocurrent transients have been examined. Measurements of the cathodic photocurrent at light switch-on have been used to determine the photocurrent onset potential as a measure of the flatband potential. Comparison with and between related literature observations has shown broad agreement across considerably varying BDD/electrolyte systems. The flatband potential shifted positively following electrochemical oxygen evolution, indicating the formation of oxygen-containing groups on the diamond surface, these increasing the potential drop across the Helmholtz layer. For the electrochemically oxidised electrode, the cathodic photocurrent transient at a fixed potential changed reproducibly with changing solution pH, owing to the participation of the oxygen-containing surface groups in acid–base equilibrium with the solution. This clear demonstration of BDD as a photoelectrochemical pH sensor is in principle extendable to mapping the spatial variation in pH across a BDD surface by use of a focussed light spot

Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

Czech Academy of Sciences Publication Activity Database

Kavan, Ladislav; Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Janda, Pavel; Tarábková, Hana; Nesladek, M.; Mortet, Vincent

2015-01-01

Roč. 179, OCT 2015 (2015), s. 626-636 ISSN 0013-4686 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Raman spectroelectrochemistry * atomic force microscopy * boron doped diamond Subject RIV: CG - Electrochemistry Impact factor: 4.803, year: 2015

Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

Czech Academy of Sciences Publication Activity Database

Marton, M.; Mikolášek, M.; Bruncko, J.; Novotný, I.; Ižák, Tibor; Vojs, M.; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

2015-01-01

Roč. 66, č. 5 (2015), s. 277-281 ISSN 1335-3632 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) 7AMB14SK024 Institutional support: RVO:68378271 Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.407, year: 2015

Preparation of TiO{sub 2}/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Shi, Chao, E-mail: sc_sq1988@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Qu, Changqing, E-mail: quchangqing@tjut.edu.cn [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe, E-mail: bhyang207@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

2015-12-01

Highlights: • BDD film was deposited on Ta substrate by hot filament CVD method. • Ti layer was deposited on BDD film by radio frequency magnetron sputtering. • Nanostructured TiO{sub 2}/BDD/nanoporous Ta films were prepared. • The films exhibit good capacitance performance and excellent stability. - Abstract: We report nanostructured TiO{sub 2}/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO{sub 2}/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO{sub 2} and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO{sub 2}/BDD/Ta film was used as the working electrode with 0.1 M Na{sub 2}SO{sub 4} as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm{sup −2} at a scan rate of 5 mV s{sup −1} for a B/C ratio of 0.1% w/w. Furthermore, the TiO{sub 2}/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO{sub 2} layer and Ta nanoporous structures, and the synergies between them. These results show that TiO{sub 2}/BDD/Ta films are promising as capacitor electrodes for special applications.

Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

Directory of Open Access Journals (Sweden)

Yu Lin Liu

2012-06-01

Full Text Available Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films.

Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

Czech Academy of Sciences Publication Activity Database

Ashcheulov, Petr; Šebera, Jakub; Kovalenko, Alexander; Petrák, Václav; Fendrych, František; Nesládek, M.; Taylor, Andrew; Vlčková Živcová, Zuzana; Frank, Otakar; Kavan, Ladislav; Dračínský, Martin; Hubík, Pavel; Vacík, Jiří; Kraus, I.; Kratochvílová, Irena

2013-01-01

Roč. 86, č. 10 (2013), , "443-1"-"443-9" ISSN 1434-6028 R&D Projects: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA MŠk(XE) LM2011019; GA ČR GA13-31783S; GA MŠk(CZ) LD11076 EU Projects: European Commission(XE) 238201 - MATCON Institutional support: RVO:68378271 ; RVO:61388955 ; RVO:61388963 ; RVO:61389005 Keywords : polycrystalline diamond layer * conductivity B doping Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 1.463, year: 2013

Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D.

2008-03-29

To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Energy Technology Data Exchange (ETDEWEB)

Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

2013-12-02

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

International Nuclear Information System (INIS)

Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

2013-01-01

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

International Nuclear Information System (INIS)

Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

2014-01-01

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

Screening metal nanoparticles using boron-doped diamond microelectrodes

Energy Technology Data Exchange (ETDEWEB)

Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Rangkuti, Prasmita K. [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University (Japan); JST ACCEL, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan)

2016-04-19

Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

Screening metal nanoparticles using boron-doped diamond microelectrodes

International Nuclear Information System (INIS)

Ivandini, Tribidasari A.; Rangkuti, Prasmita K.; Einaga, Yasuaki

2016-01-01

Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH)2 dendritic architectures

International Nuclear Information System (INIS)

Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo

2012-01-01

Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH) 2 dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH) 2 nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

Nanodiamond Films for Applications in Electrochemical Systems

Directory of Open Access Journals (Sweden)

A. F. Azevedo

2012-01-01

Full Text Available The purpose of the present paper is to give an overview on the current development status of nanocrystalline diamond electrodes for electrochemical applications. Firstly, we describe a brief comparison between the general properties of nanocrystalline diamond (undoped and boron-doped and boron-doped microcrystalline diamond films. This is followed by a summary of the nanodiamond preparation methods. Finally, we present a discussion about the undoped and boron-doped nanocrystalline diamond and their characteristics, electrochemical properties, and practical applications.

Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.

2017-07-15

Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

2006-01-01

Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

Czech Academy of Sciences Publication Activity Database

Kociniewski, T.; Remeš, Zdeněk; Mer, C.; Nesládek, Miloš; Habka, N.; Barjon, J.; Jomard, F.; Chevallier, J.; Omnès, F.; Tromson, D.; Bergonzo, P.

2009-01-01

Roč. 18, 5-8 (2009), s. 827-830 ISSN 0925-9635 Institutional research plan: CEZ:AV0Z10100521 Keywords : AMFTPS * DBP * boron doped diamond * passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.822, year: 2009

Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

International Nuclear Information System (INIS)

Niedziolka-Joensson, Joanna; Boland, Susan; Leech, Donal; Boukherroub, Rabah; Szunerits, Sabine

2010-01-01

The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

On the changing electrochemical behaviour of boron-doped diamond surfaces with time after cathodic pre-treatments

International Nuclear Information System (INIS)

Salazar-Banda, Giancarlo R.; Andrade, Leonardo S.; Nascente, Pedro A.P.; Pizani, Paulo S.; Rocha-Filho, Romeu C.; Avaca, Luis A.

2006-01-01

The electrochemical response of the Fe(CN) 6 4-/3- redox couple on boron-doped diamond (BDD) electrodes immediately after a cathodic pre-treatment and as a function of time exposed to atmospheric conditions is reported here. After this pre-treatment the electrode exhibits a changing electrochemical behaviour, i.e., a loss of the reversibility for the Fe(CN) 6 4-/3- redox couple as a function of time. Raman spectra showed that neither important bulk structural differences nor significant changes in the sp 2 /sp 3 content are introduced into the BDD film by the cathodic pre-treatment indicating that H-terminated sites play an important role in the electrochemical response of the electrodes. Thus, the changing behaviour reflected by a progressive decrease of the electron transfer rate with time must be associated to a loss of superficial hydrogen due to oxidation by oxygen from the air, as confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Moreover, it was also found that this changing electrochemical behaviour is inversely proportional to the doping level, suggesting that the boron content has a stabilizing effect on the H-terminated surface. These results point out the necessity of doing the cathodic pre-treatment just before the electrochemical experiments are carried out in order to ensure reliable and reproducible results

Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

International Nuclear Information System (INIS)

Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

1987-01-01

Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

Boron doped diamond electrode for the wastewater treatment

International Nuclear Information System (INIS)

Quiroz Alfaro, Marco Antonio; Ferro, Sergio; Martinez-Huitle, Carlos Alberto; Vong, Yunny Meas

2006-01-01

Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

Boron doped diamond electrode for the wastewater treatment

Directory of Open Access Journals (Sweden)

Alfaro Marco Antonio Quiroz

2006-01-01

Full Text Available Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes.

First principles calculation of lithium-phosphorus co-doped diamond

Directory of Open Access Journals (Sweden)

Q.Y. Shao

2013-03-01

Full Text Available We calculate the density of states (DOS and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li and phosphorus (P by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-doping on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The affection of Li-P co-doping concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level and also may favorably regulate the diamond lattice distortion and expansion caused by the P atom.

Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

International Nuclear Information System (INIS)

Janssens, S D; Pobedinskas, P; Ruttens, B; D'Haen, J; Nesladek, M; Haenen, K; Wagner, P; Vacik, J; Petrakova, V

2011-01-01

A systematic study on the morphology and electronic properties of thin heavily boron-doped nanocrystalline diamond (NCD) films is presented. The films have nominally the same thickness (∼150 nm) and are grown with a fixed B/C ratio (5000 ppm) but with different C/H ratios (0.5-5%) in the gas phase. The morphology of the films is investigated by x-ray diffraction and atomic force microscopy measurements, which confirm that lower C/H ratios lead to a larger average grain size. Magnetotransport measurements reveal a decrease in resistivity and a large increase in mobility, approaching the values obtained for single-crystal diamond as the average grain size of the films increases. In all films, the temperature dependence of resistivity decreases with larger grains and the charge carrier density and mobility are thermally activated. It is possible to separate the intra- and intergrain contributions for resistivity and mobility, which indicates that in these complex systems Matthiessen's rule is followed. The concentration of active charge carriers is reduced when the boron-doped NCD is grown with a lower C/H ratio. This is due to lower boron incorporation, which is confirmed by neutron depth profiling.

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Energy Technology Data Exchange (ETDEWEB)

Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-04-15

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

Energy Technology Data Exchange (ETDEWEB)

Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

2012-03-19

In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

Detection of DNA nucleotides on pretreated boron doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Garbellini, Gustavo S.; Uliana, Carolina V.; Yamanaka, Hideko [UNESP, Araraquara, SP (Brazil). Inst. de Quimica

2011-07-01

The individual detection and equimolar mixture of DNA nucleotides guanosine monophosphate (GMP), adenosine monophosphate (AMP), thymidine (TMP) and cytidine (CMP) 5'-monophosphate using square wave voltammetry was performed on boron doped diamond (BDD) electrodes cathodically (Red-DDB) and anodically (Oxi-DDB) pretreated. The oxidation of individual DNA nucleotides was more sensitive on Oxi-BDD electrode. In a simultaneous detection of nucleotides, the responses of GMP, AMP, TMP and CMP were very adequate on both treated electrodes. Particularly, more sensitive and separate peaks for TMP and CMP on Oxi-BDD and Red-BDD electrodes, respectively, were observed after deconvolution procedure. The detection of nucleotides in aqueous solutions will certainly contribute for genotoxic evaluation of substances and hybridization reactions by immobilizing ss or ds-DNA on BDD surface. (author)

An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.

Science.gov (United States)

Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

2017-05-05

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

Controlling physical and chemical bonding of polypyrrole to boron doped diamond by surface termination

Czech Academy of Sciences Publication Activity Database

Ukraintsev, Egor; Kromka, Alexander; Janssen, W.; Haenen, K.; Rezek, Bohuslav

2013-01-01

Roč. 8, č. 1 (2013), s. 17-26 ISSN 1452-3981 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996 Grant - others:EU FP7 Marie Curie ITN MATCON(XE) PITN-GA-2009-238201 Institutional support: RVO:68378271 Keywords : electrochemical growth * polypyrrole * boron doped diamond * scanning electron microscopy * Kelvin force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.956, year: 2013 http://www.electrochemsci.org/papers/vol8/80100017.pdf

Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH){sub 2} dendritic architectures

Energy Technology Data Exchange (ETDEWEB)

Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo [Korea University, Seoul (Korea, Republic of)

2012-03-15

Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH){sub 2} dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH){sub 2} nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

Indirect Voltammetric Sensing Platforms For Fluoride Detection on Boron-Doped Diamond Electrode Mediated via [FeF6]3− and [CeF6]2− Complexes Formation

International Nuclear Information System (INIS)

Culková, Eva; Tomčík, Peter; Švorc, Ľubomír; Cinková, Kristína; Chomisteková, Zuzana; Durdiak, Jaroslav; Rievaj, Miroslav; Bustin, Dušan

2014-01-01

Very simple and sensitive electroanalytical technique based on synergistic combination of reaction electrochemistry (specificity) and bare boron-doped diamond electrode (sensitivity) for the detection of fluorides in drinking water was developed as variant based on dynamic electrochemistry to ISE analysis. It is based on the formation of electroinactive fluoride complexes with Fe(III) and Ce(IV) ions decreasing such diffusion current of free metal on boron-doped diamond electrode. Due to low background signal of boron-doped diamond electrode reasonably low detection limits of the order of 10 −6 mol L −1 for linear sweep voltammetric method using formation of [FeF 6 ] 3− and 10 −7 mol L −1 in a square-wave variant of this technique have been achieved. This is approximately 1–2 orders lower than in the case of platinum comb-shaped interdigitated microelectrode array. Linear sweep voltammetric method based on [CeF 6 ] 2− complex formation has lower sensitivity and may be suitable for samples with higher content of fluoride and not to analysis of drinking water

Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

Institute of Scientific and Technical Information of China (English)

王小平; 王丽军; 张启仁; 姚宁; 张兵临

2003-01-01

We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

Modified diamond electrodes for electrolysis and electroanalysis applications

International Nuclear Information System (INIS)

Einaga, Yasuaki; Sato, Rika; Olivia, Herlambang; Shin, Dongchan; Ivandini, T.A.; Fujishima, Akira

2004-01-01

The outstanding properties of diamond make it a very attractive material for use in many potential applications. In particular, the superior electrochemical properties of highly boron-doped conductive diamond films, prepared by the chemical vapor deposition (CVD) process, have received attention from electrochemists. This paper reports several diversified applications of boron-doped diamond electrodes; highly sensitive and interference-free microfiber electrodes with over-oxidized polypyrrole modification, integrated electrochemical detector for microchip capillary electrophoresis (CE), and smoothing treatments of micro-polycrystalline surface. Studies have been made of the electrochemical properties of each system and their application in electroanalysis is discussed

Electron Paramagnetic Resonance and X-ray Diffraction of Boron- and Phosphorus-Doped Nanodiamonds

Science.gov (United States)

Binh, Nguyen Thi Thanh; Dolmatov, V. Yu.; Lapchuk, N. M.; Shymanski, V. I.

2017-11-01

Powders of boron- and phosphorus-doped detonation nanodiamonds and sintered pellets of non-doped nanodiamond powders were studied using electron paramagnetic resonance and x-ray diffraction. Doping of detonation nanodiamond crystals with boron and phosphorus was demonstrated to be possible. These methods could be used to diagnose diamond nanocrystals doped during shock-wave synthesis.

Polycrystalline Diamond Schottky Diodes and Their Applications.

Science.gov (United States)

Zhao, Ganming

In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

Electron transfer at boron-doped diamond electrodes modified by graphitic micro-domains

Energy Technology Data Exchange (ETDEWEB)

Mahe, E.; Devilliers, D. [Pierre et Marie Curie Univ., Paris (France). Electrochemistry Lab.; Comninellis, C. [Lausanne Ecole Polytechnique, Lausanne (Switzerland). Groupe de Genie Electrochimique

2006-07-01

Boron-doped (BDD) electrodes have been used in electrolysis procedures for the last 10 years. The mechanical stability of the electrode, its large electrochemical window and its low capacitive current place this new electrode material as an alternative for replacing more costly or toxic materials such as mercury. However, the ferri/ferrocyanide system of boron-doped electrodes has shown contradictory results in the literature. This study proposed a cathodic pre-treatment which relied on the presence of residual graphitic domains formed during the preparation of the BDD film. An experiment was conducted in which the doping procedure was used to control the amount of graphitic phase on the electrode with highly oriented pyrolytic graphite (HOPG) grafted on the BDD surface. Surface characterization with Raman spectroscopy and Scanning Electron Microscopy (SEM) was then carried out using cyclic voltammetry and electrochemical impedance spectroscopy. The electroanalytical determination of the amount of graphitic micro-domains was described and a pulse procedure was proposed which obtained a reproducible surface state. 2 refs., 2 figs.

Kinetics and mechanism of the deep electrochemical oxidation of sodium diclofenac on a boron-doped diamond electrode

Science.gov (United States)

Vedenyapina, M. D.; Borisova, D. A.; Rosenwinkel, K.-H.; Weichgrebe, D.; Stopp, P.; Vedenyapin, A. A.

2013-08-01

The kinetics and mechanism of the deep oxidation of sodium diclofenac on a boron-doped diamond electrode are studied to develop a technique for purifying wastewater from pharmaceutical products. The products of sodium diclofenac electrolysis are analyzed using cyclic voltammetry and nuclear magnetic resonance techniques. It is shown that the toxicity of the drug and products of its electrolysis decreases upon its deep oxidation.

Superconductivity in heavily boron-doped silicon carbide

Directory of Open Access Journals (Sweden)

Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

2008-01-01

Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

2015-02-15

Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

The water decomposition reactions on boron-doped diamond electrodes

International Nuclear Information System (INIS)

Suffredini, Hugo B.; Machado, Sergio A.S; Avaca, Luis A.

2004-01-01

The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD) electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol -1 , indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol -1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material. (author)

The water decomposition reactions on boron-doped diamond electrodes

Directory of Open Access Journals (Sweden)

Suffredini Hugo B

2004-01-01

Full Text Available The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol-1, indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol-1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material.

Fabrication of Nickel/nanodiamond/boron-doped diamond electrode for non-enzymatic glucose biosensor

International Nuclear Information System (INIS)

Dai, Wei; Li, Mingji; Gao, Sumei; Li, Hongji; Li, Cuiping; Xu, Sheng; Wu, Xiaoguo; Yang, Baohe

2016-01-01

Highlights: • Nanodiamonds (NDs) were electrophoretically deposited on the BDD film. • The NDs significantly extended the potential window. • Ni/NDs/BDD electrode was prepared by electrodeposition. • The electrode shows good catalytic activity for glucose oxidation. - Abstract: A stable and sensitive non-enzymatic glucose sensor was prepared by modifying a boron-doped diamond (BDD) electrode with nickel (Ni) nanosheets and nanodiamonds (NDs). The NDs were electrophoretically deposited on the BDD surface, and acted as nucleation sites for the subsequent electrodeposition of Ni. The morphology and composition of the modified BDD electrodes were characterized by field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy, respectively. The Ni nanosheet-ND modified BDD electrode exhibited good current response towards the non-enzymatic oxidation of glucose in alkaline media. The NDs significantly extended the potential window. The response to glucose was linear over the 0.2–1055.4-μM range. The limit of detection was 0.05 μM, at a signal-to-noise ratio of 3. The Ni nanosheet-ND/BDD electrode exhibited good selectivity, reproducibility and stability. Its electrochemical performance, low cost and simple preparation make it a promising non-enzymatic glucose sensor.

Anodic oxidation with doped diamond electrodes: a new advanced oxidation process

International Nuclear Information System (INIS)

Kraft, Alexander; Stadelmann, Manuela; Blaschke, Manfred

2003-01-01

Boron-doped diamond anodes allow to directly produce OH· radicals from water electrolysis with very high current efficiencies. This has been explained by the very high overvoltage for oxygen production and many other anodic electrode processes on diamond anodes. Additionally, the boron-doped diamond electrodes exhibit a high mechanical and chemical stability. Anodic oxidation with diamond anodes is a new advanced oxidation process (AOP) with many advantages compared to other known chemical and photochemical AOPs. The present work reports on the use of diamond anodes for the chemical oxygen demand (COD) removal from several industrial wastewaters and from two synthetic wastewaters with malic acid and ethylenediaminetetraacetic (EDTA) acid. Current efficiencies for the COD removal between 85 and 100% have been found. The formation and subsequent removal of by-products of the COD oxidation has been investigated for the first time. Economical considerations of this new AOP are included

Electrical current at micro-/macro-scale of undoped and nitrogen-doped MWPECVD diamond films

Science.gov (United States)

Cicala, G.; Velardi, L.; Senesi, G. S.; Picca, R. A.; Cioffi, N.

2017-12-01

Chemical, structural, morphological and micro-/macro-electrical properties of undoped and nitrogen-(N-)doped diamond films are determined by X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, field emission scanning electron microscopy, atomic force microscopy, scanning capacitance microscopy (SCM) and two points technique for I-V characteristics, respectively. The characterization results are very useful to examine and understand the relationship among these properties. The effect of the nitrogen incorporation in diamond films is investigated through the evolution of the chemical, structural, morphological and topographical features and of the electrical behavior. The distribution of the electrical current is first assessed at millimeter scale on the surface of diamond films and then at micrometer scale on small regions in order to establish the sites where the carriers preferentially move. Specifically, the SCM images indicate a non-uniform distribution of carriers on the morphological structures mainly located along the grain boundaries. A good agreement is found by comparing the electrical currents at the micro- and macro-scale. This work aims to highlight phenomena such as photo- and thermionic emission from N-doped diamond useful for microelectronic engineering.

Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

Energy Technology Data Exchange (ETDEWEB)

Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

2003-06-23

This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

Energy Technology Data Exchange (ETDEWEB)

Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

2010-02-01

An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

Fabrication of cone-shaped boron doped diamond and gold nanoelectrodes for AFM-SECM

Energy Technology Data Exchange (ETDEWEB)

Avdic, A; Lugstein, A; Bertagnolli, E [Solid State Electronics Institute, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Wu, M; Gollas, B [Competence Centre for Electrochemical Surface Technology, Viktor Kaplan Strasse 2, 2700 Wiener Neustadt (Austria); Pobelov, I; Wandlowski, T [Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, 3012 Bern (Switzerland); Leonhardt, K; Denuault, G, E-mail: alois.lugstein@tuwien.ac.at [School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom)

2011-04-08

We demonstrate a reliable microfabrication process for a combined atomic force microscopy (AFM) and scanning electrochemical microscopy (SECM) measurement tool. Integrated cone-shaped sensors with boron doped diamond (BDD) or gold (Au) electrodes were fabricated from commercially available AFM probes. The sensor formation process is based on mature semiconductor processing techniques, including focused ion beam (FIB) machining, and highly selective reactive ion etching (RIE). The fabrication approach preserves the geometry of the original AFM tips resulting in well reproducible nanoscaled sensors. The feasibility and functionality of the fully featured tips are demonstrated by cyclic voltammetry, showing good agreement between the measured and calculated currents of the cone-shaped AFM-SECM electrodes.

In-situ boron doping of chemical-bath deposited CdS thin films

International Nuclear Information System (INIS)

Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

2009-01-01

In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

International Nuclear Information System (INIS)

Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

2013-01-01

In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

CE with a boron-doped diamond electrode for trace detection of endocrine disruptors in water samples.

Science.gov (United States)

Browne, Damien J; Zhou, Lin; Luong, John H T; Glennon, Jeremy D

2013-07-01

Off-line SPE and CE coupled with electrochemical detection have been used for the determination of bisphenol A (BPA), bisphenol F, 4-ethylphenol, and bisphenol A diglycidyl ether in bottled drinking water. The use of boron-doped diamond electrode as an electrochemical detector in amperometric mode that provides a favorable analytical performance for detecting these endocrine-disrupting compounds, such as lower noise levels, higher peak resolution with enhanced sensitivity, and improved resistance against electrode passivation. The oxidative electrochemical detection of the endocrine-disrupting compounds was accomplished by boron-doped diamond electrode poised at +1.4 V versus Ag/AgCl without electrode pretreatment. An off-line SPE procedure (Bond Elut® C18 SPE cartridge) was utilized to extract and preconcentrate the compounds prior to separation and detection. The minimum concentration detectable for all four compounds ranged from 0.01 to 0.06 μM, having S/N equal to three. After exposing the plastic bottle water container under sunlight for 7 days, the estimated concentration of BPA in the bottled drinking water was estimated to be 0.03 μM. This proposed approach has great potential for rapid and effective determination of BPA content present in water packaging of plastic bottles that have been exposed to sunlight for an extended period of time. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymerisation occurrence in the anodic oxidation of phosphite on a boron-doped diamond electrode

International Nuclear Information System (INIS)

Petrucci, Elisabetta; Montanaro, Daniele; Merli, Carlo

2008-01-01

The electrogeneration of polymeric phosphorus compounds during the anodic oxidation of aqueous solutions of phosphites on a boron-doped diamond electrode has been studied. Although the main oxidation product is orthophosphate, the results indicate the simultaneous generation of short-chain and cyclic compounds containing two and three phosphorus atoms whose evolution has been followed by ion chromatography. The effect on the reaction yield of several operative parameters such as current density, pH, temperature and initial phosphite concentration has been investigated. Consistently with the data presented, a new process for the generation of polymeric phosphates is obtained

Fabrication of porous boron-doped diamond on SiO.sub.2./sub. fiber templates

Czech Academy of Sciences Publication Activity Database

Petrák, Václav; Vlčková Živcová, Zuzana; Krýsová, Hana; Frank, Otakar; Zukal, Arnošt; Klimša, Ladislav; Kopeček, Jaromír; Taylor, Andrew; Kavan, Ladislav; Mortet, Vincent

2017-01-01

Roč. 114, Jan (2017), s. 457-464 ISSN 0008-6223 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR GA13-31783S Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568; AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : boron-doped diamond * electrochemical properties Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 6.337, year: 2016

Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis

International Nuclear Information System (INIS)

Gaikwad, Rajendra S.; Bhande, Sambhaji S.; Mane, Rajaram S.; Pawar, Bhagwat N.; Gaikwad, Sanjay L.; Han, Sung-Hwan; Joo, Oh-Shim

2012-01-01

Graphical abstract: Display Omitted Highlights: ► We report surface roughness dependent transparency and conductivity in ZnO films. ► The surface roughness with respected to boron doping concentrations is studied. ► Boron doped and pristine Zinc oxide thin films have showed ≥95% transmittance. ► Increased carrier concentration of 9.21 × 10 21 cm −3 revealed from Hall measurement. -- Abstract: Sprayed polycrystalline ZnO and boron-doped ZnO thin films composed of spherical grains of 25–32 nm in diameters are used in roughness measurement and further correlated with the transparency and the conductivity characteristics. The surface roughness is increased up to Zn 0.98 B 0.02 O and then declined at higher boron concentrations. The sprayed ZnO films revealed ≥95% transmittance in the visible wavelength range, 1.956 × 10 −4 Ω cm electrical resistivity, 46 cm 2 /V s Hall mobility and 9.21 × 10 21 cm −3 charge carrier concentration. The X-ray photoelectron spectroscopy study has confirmed 0.15 eV binding energy change for Zn 2p 3/2 when 2 at% boron content is mixed without altering electro-optical properties substantially. Finally, using soft modeling importance of these textured ZnO over non-textured films for enhancing the solar cells performance is explored.

Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

Directory of Open Access Journals (Sweden)

Rattanakorn Saensak

2014-03-01

Full Text Available This work reports characterizations of diamond-like carbon (DLC films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN63-/Fe(CN64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

Czech Academy of Sciences Publication Activity Database

Vlčková Živcová, Zuzana; Frank, Otakar; Petrák, Václav; Tarábková, Hana; Vacík, Jiří; Nesládek, M.; Kavan, Ladislav

2013-01-01

Roč. 87, JAN 2013 (2013), s. 518-525 ISSN 0013-4686 R&D Projects: GA AV ČR IAA400400804; GA AV ČR KAN200100801 Grant - others:European Commission CORDIS(XE) FP7-ENERGY-2010-FET, projekt 256617 Institutional support: RVO:61389005 ; RVO:61388955 ; RVO:68378271 Keywords : boron doped diamond * electrochemistry * aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 4.086, year: 2013

Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

Efficiency and stability of spectral sensitization of boron-doped-diamond electrodes through covalent anchoring of a donor–acceptor organic chromophore (P1)

Czech Academy of Sciences Publication Activity Database

Krýsová, Hana; Bartoň, Jan; Petrák, Václav; Jurok, R.; Kuchař, M.; Cígler, Petr; Kavan, Ladislav

2016-01-01

Roč. 18, č. 24 (2016), s. 16444-16450 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : dye-sensitized solar cells * boron-doped diamond * nanoscale Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.123, year: 2016

Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Energy Technology Data Exchange (ETDEWEB)

Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

2015-05-15

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: → DLC thin films were deposited on Si substrates via dc magnetron sputtering. → Some DLC films were doped with N and/or Pt/Ru. → The film corrosion behavior was studied in a Hank solution with polarization test. → The PtRu-DLC film showed the highest corrosion potential among the films studied.

Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

International Nuclear Information System (INIS)

Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

2016-01-01

The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L"−"1, with a detection limit of 0.065 μmol L"−"1. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ

Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

Energy Technology Data Exchange (ETDEWEB)

Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

2015-04-01

Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

In vivo pH monitoring using boron doped diamond microelectrode and silver needles: Application to stomach disorder diagnosis

OpenAIRE

Fierro, St?phane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

2013-01-01

This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the result...

Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

International Nuclear Information System (INIS)

Wang, Xiaoping; Wang, Jinye; Wang, Lijun

2016-01-01

A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

Study of Electrochemical Oxidation and Quantification of the Pesticide Pirimicarb Using a Boron-Doped Diamond Electrode

International Nuclear Information System (INIS)

Selva, Thiago Matheus Guimarães; De Araujo, William Reis; Bacil, Raphael Prata; Paixão, Thiago Regis Longo Cesar

2017-01-01

Highlights: •A complete electro-oxidation mechanism of the pesticide Pirimicarb was proposed. •The electrochemical mechanism was supported by voltammetry techniques and mass spectrometry data. •An electroanalytical method using boron-doped diamond electrode was proposed to quantify Pirimicarb in natural waters. •The proposed analytical method is simple, low-cost, accurate and portable. -- Abstract: An electrochemical study of the carbamate pesticide pirimicarb (PMC), which acts on the central nervous system, was performed using a boron-doped diamond working electrode. Cyclic, differential pulse, and square-wave voltammetry experiments across a wide pH range (2.0 to 8.0) showed three irreversible oxidation processes in the voltammetric behavior of PMC. The two first processes were pH-dependent, while the third was not. The three oxidation process were independent of each other, and each involved the transfer of one electron. A reaction proposal for the electrochemical oxidation of PMC is shown, and it is supported by mass spectrometry experiments. After this, an analytical method for PMC quantification in water samples by differential pulse (DP) voltammetry is proposed. The optimal DP voltammetric parameters (step potential, amplitude potential, and scan rate) were optimized using experimental design, and an analytical curve was obtained from 2.0 to 219 μmol L −1 with an estimated detection limit of 1.24 μmol L −1 . The accuracy of the proposed method was evaluated by the addition and recovery method, with recoveries ranging from 88.6 to 96.3%. Some highlights of the proposed analytical method are its simplicity, reliability, and portability.

Simultaneous detection of iodine and iodide on boron doped diamond electrodes.

Science.gov (United States)

Fierro, Stéphane; Comninellis, Christos; Einaga, Yasuaki

2013-01-15

Individual and simultaneous electrochemical detection of iodide and iodine has been performed via cyclic voltammetry on boron doped diamond (BDD) electrodes in a 1M NaClO(4) (pH 8) solution, representative of typical environmental water conditions. It is feasible to compute accurate calibration curve for both compounds using cyclic voltammetry measurements by determining the peak current intensities as a function of the concentration. A lower detection limit of about 20 μM was obtained for iodide and 10 μM for iodine. Based on the comparison between the peak current intensities reported during the oxidation of KI, it is probable that iodide (I(-)) is first oxidized in a single step to yield iodine (I(2)). The latter is further oxidized to obtain IO(3)(-). This technique, however, did not allow for a reasonably accurate detection of iodate (IO(3)(-)) on a BDD electrode. Copyright © 2012 Elsevier B.V. All rights reserved.

Fabrication and characterization of composite TiO{sub 2} nanotubes/boron-doped diamond electrodes towards enhanced supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Sobaszek, M. [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Siuzdak, K.; Sawczak, M. [Centre for Plasma and Laser Engineering, The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Faculty of Chemistry, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland)

2016-02-29

The composite TiO{sub 2} nanotubes/boron-doped diamond electrodes were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition resulting in the improved electrochemical performance. This composite electrode can deliver high specific capacitance of 7.46 mF cm{sup −2} comparing to boron-doped diamond (BDD) deposited onto flat Ti plate (0.11 mF cm{sup −2}).The morphology and composition of composite electrode were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS and Raman analyses, the structure of TiO{sub 2} was greatly changed during Chemical Vapor Deposition process: formation of Ti{sup 3+} sites, partial anatase to rutile transformation and titanium carbide phase formation. This effect is attributed to the simultaneous presence of activated hydrogen and carbon in the plasma leading to enhanced dehydration of NTs (nanotubes) followed by carbon bonding. The enhanced capacitive effect of TiO{sub 2} NT/BDD could be recognized as: (1) the unique synergistic morphology of NTs and BDD providing more efficient conducting pathway for the diffusion of ions and (2) partial decomposition of NTs and transformation towards to TiC and Ti{sub 2}O{sub 3} fractions. Finally, highly ordered titania nanotubes produced via simply, quick and controllable method — anodization, could act as promising substrate for conductive BDD layer deposition and further application of such composites for supercapacitor construction. - Highlights: • The TiO{sub 2} nanotube (NT)/diamond electrode delivers capacitance of 7.46 mF cm{sup −2}. • The NTs are not affected by diamond growth process and keep their pristine shape. • The BDD overlayer fully encapsulates TiO{sub 2} NTs exhibiting typical columnar growth. • The activated hydrogen and carbon in the plasma lead to enhanced dehydration of NTs. • The presence of TiC and Ti{sub 2}O{sub 3} fractions introducing additional capacitance.

H-terminated polycrystalline boron doped diamond electrode for geochemical sensing into underground components of nuclear repositories

International Nuclear Information System (INIS)

Boussadi, A.; Betelu, S.; Ignatiadis, I.; Silva, F.

2012-01-01

Document available in extended abstract form only. Nuclear waste repositories are being installed in deep excavated rock formations in some places in Europe to isolate and store radioactive waste. In France, Callovo-Oxfordian formation (COx) is potential candidate for nuclear waste repository. It is thus necessary to measure in situ the state of a structure's health during its entire life. The monitoring of the near-field rock and the knowledge of the geochemical transformations can be carried out by a set of sensors for a sustainable management of long-term safety, reversibility and retrievability. Among the chemical parameters, the most significant are pH, conductivity and redox potential. Wide band gap semiconductors are favored materials for chemical sensing because of their high stability to many chemical agents. Among the wide band gap materials, Chemical Vapor Deposition (CVD) boron doped diamond (BDD) benefits from a large band gap, which gives rise to a wide electrochemical potential window. It is moreover described as a radiation, corrosion and bio-corrosion resistant. These remarkable properties, in addition to a low double layer capacity and a low residual current, make BDD a promising material for geochemical sensor elaboration. This work aimed to investigate BDD- based electrodes coated with p-type polycrystalline BDD-hydrogen- terminated surfaces (1 cm 2 ) for pH and/or redox measurements into the underground components of nuclear repositories. The boron-doped p-type channel was grown in a microwave plasma reactor (BJS 150). The boron-doped channel was hydrogen terminated by a hydrogen plasma treatment in the CVD reactor, resulting in full saturation of the surface carbon bonds with hydrogen atoms. Scanning Electron Microscopy (SEM) of the polycrystalline BDD coating with a Bore/Carbon ratio of 500 ppm shows the typical columnar growth of the polycrystalline CVD diamond. A homogeneous surface was observed concerning the crystallite size which average

Electroreduction of CO{sub 2} using copper-deposited on boron-doped diamond (BDD)

Energy Technology Data Exchange (ETDEWEB)

Panglipur, Hanum Sekar; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan); Wibowo, Rahmat

2016-04-19

Electroreduction of CO{sub 2} was studied at copper-modified boron-doped diamond (Cu-BDD) electrodes as the working electrode. The Cu-BDD electrodes were prepared by electrochemical reduction with various concentrations of CuSO{sub 4} solutions. FE-SEM was utilized to characterize the electrodes. At Cu-BDD electrodes, a reduction peak at around -1.2 V (vs Ag/AgCl) attributtable to CO{sub 2} reductions could be observed by cyclic voltammetry technique of CO{sub 2} bubbled in water containing 0.1M NaCl. Accordingly, electroreduction of CO{sub 2} was conducted at -1.2 V (vs Ag/AgCl) using amperometry technique. The chemical products of the electroreduction analyzed by using HPLC showed the formation of formaldehyde, formic acid, and acetic acid at Cu-BDD electrodes.

Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

Energy Technology Data Exchange (ETDEWEB)

Calnan, Sonya [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Riedel, Wiebke; Gledhill, Sophie [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Stannowski, Bernd [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Schlatmann, Rutger [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich 1 Ingenieurwissenschaften I, University of Applied Science (HTW) Berlin, Wilhelminenhofstraße 75 A, 12459 Berlin (Germany)

2015-11-02

The effect of varying the boron and aluminium content of the starting electrolyte for extrinsically doped ZnO films grown on SnO{sub 2}:F substrates by electrochemical deposition was investigated. The ZnO:B film surface was characterized by grains with mainly hexagonal faces exposed while the exposed faces of the ZnO:Al grains were rectangular. Whereas a B{sup 3+}/Zn{sup 2+} ratio of up to 10 at.% in the electrolyte had no significant effect on the crystalline structure of the ZnO films, an Al{sup 3+}/Zn{sup 2+} ratio above 0.25 at.% increased the disorder in the crystalline structure. All the boron doped films exhibit a strong E{sub 2}-high Raman mode related to wurtzite ZnO structure but this peak was much weaker for ZnO:Al and diminished with increasing Al incorporation in the films. Exposing the films to ultra-violet light reduced their effective sheet resistance from values beyond measurement range to values between 40 and 5000 kΩ/sq for film thicknesses of 200–550 nm. Inspection of the optical spectra near the bandgap edge and the plasma edge in the mid infrared range, showed that the Al-doping resulted in a higher carrier concentration ~ 10{sup 20} cm{sup −3} than B-doping. X-ray electron spectroscopy showed that the dopant efficiency was limited by the absence of dopant atoms near the surface of all the ZnO:B films and of the lightly doped ZnO:Al and, by the formation of aluminium oxide at the surface of the more highly doped ZnO:Al films. - Highlights: • Crystalline ZnO grown by electrochemical deposition. • Comparison of influence of H{sub 3}BO{sub 3} and Al(NO{sub 3}){sub 3} as dopant sources. • Different ZnO crystalline orientation for Al and boron doping. • Film surface chemical composition suppressed electrical conductivity.

Monitoring of peptide induced disruption of artificial lipid membrane constructed on boron-doped nanocrystalline diamond by electrochemical impedance spectroscopy

Czech Academy of Sciences Publication Activity Database

Petrák, V.; Grieten, L.; Taylor, Andrew; Fendrych, František; Ledvina, Miroslav; Janssens, S. D.; Nesládek, M.; Haenen, K.; Wagner, P.

2011-01-01

Roč. 208, č. 9 (2011), s. 2099-2103 ISSN 1862-6300 R&D Projects : GA AV ČR KAN200100801; GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LD11076 Grant - others:European RD projects (XE) 238201-MATCON Institutional research plan: CEZ:AV0Z40550506; CEZ:AV0Z10100520 Keywords : biosensor * boron-doped nanocrystalline diamond * electrochemical impedance spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.463, year: 2011

Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

Energy Technology Data Exchange (ETDEWEB)

Ammar, Hafedh Belhadj, E-mail: hbelhadjammar@yahoo.fr; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

2016-02-01

The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L{sup −1}, with a detection limit of 0.065 μmol L{sup −1}. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ.

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W.; Liu, E., E-mail: MEJLiu@ntu.edu.sg

2011-10-10

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: {yields} DLC thin films were deposited on Si substrates via dc magnetron sputtering. {yields} Some DLC films were doped with N and/or Pt/Ru. {yields} The film corrosion behavior was studied in a Hank solution with polarization test. {yields} The PtRu-DLC film showed the highest corrosion potential among the films studied.

CVD of alternated microcrystalline (MCD) and nanocrystalline (NCD) diamond films on WC-TIC-CO substrates

International Nuclear Information System (INIS)

Campos, Raonei Alves; Contin, Andre; Trava-Airoldi, Vladimir J.; Corat, Evaldo Jose; Barquete, Danilo Maciel

2010-01-01

CVD Diamond coating of WC-TiC-Co cutting tools has been an alternative to increase tool lifetime. Experiments have shown that residual stresses produced during films growth on WC-TiC-Co substrates significantly increases with increasing film thickness up to 20 μm and usually leads to film delamination. In this work alternated micro- and nanocrystalline CVD diamond films have been used to relax interface stresses and to increase diamond coatings performance. WC-TiC-Co substrates have been submitted to a boronizing thermal diffusion treatment prior to CVD diamond films growth. After reactive heat treatment samples were submitted to chemical etching in acid and alkaline solution. The diamond films deposition was performed using HFCVD reactor with different gas concentrations for microcrystalline (MCD) and nano-crystalline (NCD) films growth. As a result, we present the improvement of diamond films adherence on WC-TiC-Co, evaluated by indentation and machining tests. Samples were characterized by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray (EDX) for qualitative analysis of diamond films. X-ray Diffraction (XRD) was used for phases identification after boronizing process. Diamond film compressive residual stresses were analyzed by Raman Scattering Spectroscopy (RSS). (author)

Tl and OSL dosimetry of diamond films CVD pure and unpurified with boron-carbon

International Nuclear Information System (INIS)

Melendrez, R.; Pedroza M, M.; Chernov, V.; Ochoa N, J.D.; Bernal, R.; Barboza F, M.; Castaneda, B.; Goncalves, J.A.N.; Sandonato, G.M.; Cruz Z, E.; Preciado F, S.; Cruz V, C.; Brown, F.; Schreck, M.

2004-01-01

The diamond is a material that possesses extreme physical properties, such as its hardness to the radiation, its low chemical reactivity besides its equivalence to the human tissue, which qualify him as an ideal material for radiation dosimetry. In this work, it was studied the thermal and optically stimulated response (Tl and OSL) of polycrystalline diamond films grown by the technique of CVD pure and contaminated with Boron-carbon (B/C) with the intention of characterizing their efficiency like a dosemeter for radiation in a range of 0 - 3000 Gy. For the case of the films without impurities, the Tl curve presents four main peaks, two of them in an interval of temperatures of 150-200 C and other two additional around of 250-400 C. The dependence of the response of integrated Tl and that of OSL always maintained a lineal relationship with the exhibition dose up to 100 Gy. The behavior of the films contaminated with B/C (2000 - 20000 ppm) was established through experiments that involved the signal of OSL and their relationship with the Tl response. It was found that this processes are correlated, since the electrons caught in the traps of low temperature (50 - 250 C) of the Tl they are the electrons that recombining with more probability to provide the signal of OSL. According to these results it is possible to propose the diamond films as a good candidate for dosimetry to, using the traditional technique of Tl so much as well as the but recent of OSL. (Author)

Workshop on diamond and diamond-like-carbon films for the transportation industry

Energy Technology Data Exchange (ETDEWEB)

Nichols, F.A.; Moores, D.K. [eds.

1993-01-01

Applications exist in advanced transportation systems as well as in manufacturing processes that would benefit from superior tribological properties of diamond, diamond-like-carbon and cubic boron nitride coatings. Their superior hardness make them ideal candidates as protective coatings to reduce adhesive, abrasive and erosive wear in advanced diesel engines, gas turbines and spark-ignited engines and in machining and manufacturing tools as well. The high thermal conductivity of diamond also makes it desirable for thermal management not only in tribological applications but also in high-power electronic devices and possibly large braking systems. A workshop has been recently held at Argonne National Laboratory entitled ``Diamond and Diamond-Like-Carbon Films for Transportation Applications`` which was attended by 85 scientists and engineers including top people involved in the basic technology of these films and also representatives from many US industrial companies. A working group on applications endorsed 18 different applications for these films in the transportation area alone. Separate abstracts have been prepared.

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

International Nuclear Information System (INIS)

Ray, Sekhar C.; Pong, W.F.; Papakonstantinou, P.

2016-01-01

The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp"3 network to sp"2 as evidenced by an increase of the sp"2 cluster and I_D/I_G ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp"2 cluster and I_D/I_G ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp"3-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp"3 and sp"2 contents are estimated from C K-edge XANES and VB-PES measurements.

Electrochemical degradation of some herbicides in aqueous solution on boron doped diamond anodes

International Nuclear Information System (INIS)

Zaouak, Amira; Dachraoui, Mohamed; Matoussi, Fatma

2009-01-01

Bifenox(a) and acifluorfen(b), respectively (Methyl 5-(2,4-dichlorophenoxy)-2-nitrobenzoate and 5-(2-Chloro-4-trifluoro methylphenoxy)-2-nitrobenzoic acid, are two highly toxic herbicides of the diphenyl ether class. They are widely used in agriculture. Their electrochemical oxidation behaviour is studied by cyclic voltammetry in various media with different electrodes. When galvanostatic electrolysis is realized on Boron Doped Diamond electrode (BDD) we observe that the studied contaminants undergo an almost complete degradation due to hydroxy radical action as commonly suggested. The rate of the mineralization is followed by spectrophotometric analysis and COD measurements. The optimization of this advanced oxidation process is studied as a function of the current density. It shows that the best results are obtained with low current densities. The obtained COD abatement values are superior to 90 pour cent.

Fabrication of a Microfluidic Device with Boron-doped Diamond Electrodes for Electrochemical Analysis

International Nuclear Information System (INIS)

Watanabe, Takeshi; Shibano, Shuhei; Maeda, Hideto; Sugitani, Ai; Katayama, Michinobu; Matsumoto, Yoshinori; Einaga, Yasuaki

2016-01-01

A prototype microfluidic device using boron-doped diamond (BDD) electrodes patterned on an alumina chip was designed and fabricated. Electrochemical microfluidic devices have advantages in that the amount of sample required is small, the measurement throughput is high, different functions can be integrated on a single device, and they are highly durable. In using the device for the flow injection analysis of oxalic acid, the application of a brief conditioning step ensured that the reproducibility of the current signal was excellent. Furthermore, the fabricated system also performed as a prototype of “elimination-detection flow system”, in which interfering species are eliminated using “elimination electrodes” prior to the species reaching the “detection electrode”. The fabricated device reduced the current due to interfering species by 78%. Designs of devices to improve this efficiency are also discussed.

Architecting boron nanostructure on the diamond particle surface

International Nuclear Information System (INIS)

Bai, H.; Dai, D.; Yu, J.H.; Nishimura, K.; Sasaoka, S.; Jiang, N.

2014-01-01

The present study provides an efficient approach for nano-functionalization of diamond powders. Boron nanostructure can be grown on diamond particle entire surface by a simple heat-treatment process. After treatment, various boron nanoforms were grown on the diamond particle surface at different processing temperature. High-density boron nanowires (BNWs) grow on the diamond particle entire surface at 1333 K, while nanopillars cover diamond powders when the heat treatment process is performed at 1393 K. The influence of the pretreatment temperature on the microstructure and thermal conductivity of Cu/diamond composites were investigated. Cu/diamond composites with high thermal conductivity of 670 W (m K) −1 was obtained, which was achieved by the formation of large number of nanowires and nanopillars on the diamond particle surface.

Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

McEvoy, James P. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Foord, John S. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom)]. E-mail: john.foord@chem.ox.ac.uk

2005-05-05

Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China){sub 6} {sup 3-} and Ru(NH{sub 3}){sub 6} {sup 3+}, and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction.

Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

International Nuclear Information System (INIS)

McEvoy, James P.; Foord, John S.

2005-01-01

Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China) 6 3- and Ru(NH 3 ) 6 3+ , and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction

Electrochemical reduction of oxygen on gold and boron-doped diamond electrodes in ambient temperature, molten acetamide-urea-ammonium nitrate eutectic melt

International Nuclear Information System (INIS)

Dilimon, V.S.; Venkata Narayanan, N.S.; Sampath, S.

2010-01-01

The electrochemical reduction of oxygen has been studied on gold, boron-doped diamond (BDD) and glassy carbon (GC) electrodes in a ternary eutectic mixture of acetamide (CH 3 CONH 2 ), urea (NH 2 CONH 2 ) and ammonium nitrate (NH 4 NO 3 ). Cyclic voltammetry (CV), differential pulse voltammetry (DPV), chronoamperometry and rotating disk electrode (RDE) voltammetry techniques have been employed to follow oxygen reduction reaction (ORR). The mechanism for the electrochemical reduction of oxygen on polycrystalline gold involves 2-step, 2-electron pathways of O 2 to H 2 O 2 and further reduction of H 2 O 2 to H 2 O. The first 2-electron reduction of O 2 to H 2 O 2 passes through superoxide intermediate by 1-electron reduction of oxygen. Kinetic results suggest that the initial 1-electron reduction of oxygen to HO 2 is the rate-determining step of ORR on gold surfaces. The chronoamperometric and RDE studies show a potential dependent change in the number of electrons on gold electrode. The oxygen reduction reaction on boron-doped diamond (BDD) seems to proceed via a direct 4-electron process. The reduction of oxygen on the glassy carbon (GC) electrode is a single step, irreversible, diffusion limited 2-electron reduction process to peroxide.

Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

Directory of Open Access Journals (Sweden)

Orawon Chailapakul

2008-03-01

Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

Electrochemical degradation of chlorobenzene on boron-doped diamond and platinum electrodes

International Nuclear Information System (INIS)

Liu Lei; Zhao Guohua; Wu Meifen; Lei Yanzhu; Geng Rong

2009-01-01

In this paper the electrochemical degradation of chlorobenzene (CB) was investigated on boron-doped diamond (BDD) and platinum (Pt) anodes, and the degradation kinetics on these two electrodes was compared. Compared with the total mineralization with a total organic carbon (TOC) removal of 85.2% in 6 h on Pt electrode, the TOC removal reached 94.3% on BDD electrode under the same operate condition. Accordingly, the mineralization current efficiency (MCE) during the mineralization on BDD electrode was higher than that on the Pt electrode. Besides TOC, the conversion of CB, the productions and decay of intermediates were also monitored. Kinetic study indicated that the decay of CB on BDD and Pt electrodes were both pseudo-first-order reactions, and the reaction rate constant (k s ) on BDD electrode was higher than that on Pt electrode. The different reaction mechanisms on the two electrodes were investigated by the variation of intermediates concentrations. Two different reaction pathways for the degradation of CB on BDD electrode and Pt electrode involving all these intermediates were proposed.

Occurrence of pharmaceuticals, illicit drugs, and resistant types of bacteria in hospital effluent and their effective degradation by boron-doped diamond electrodes

Czech Academy of Sciences Publication Activity Database

Mackuľak, T.; Vojs, M.; Grabic, R.; Golovko, O.; Staňová, A.; Birošová, L.; Medveďová, A.; Híveš, J.; Gál, M.; Kromka, Alexander; Hanusová, A.

2016-01-01

Roč. 147, č. 1 (2016), s. 93-103 ISSN 0026-9247. [35th International Conference on Modern Electrochemical Methods (MEM). Jetřichovice, 18.05.2015-22.05.2015] Institutional support: RVO:68378271 Keywords : hospital wastewater * antibiotics * ecology * boron-doped diamond electrode * mass spectroscopy * pharmaceuticals Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.282, year: 2016

P-type diamond stripper foils for tandem ion accelerators

International Nuclear Information System (INIS)

Phelps, A.W.; Koba, R.

1989-01-01

The authors are developing a stripper foil composed of a p-type diamond membrane. This diamond stripper foil should have a significantly longer lifetime than any conventional stripper foil material. To be useful for stripper foils, the boron-doped blue diamond films must be thinner than 0.8 μm and pore-free. Two methods are compared for their ability to achieve a high nucleation areal density on a W substrate. Some W substrates were first coated with think layer of boron (≤20 nm) in order to enhance nucleation. Other W substrates were scratched with submicron diamond particles. A schematic diagram of the stripper foil is shown. Stripper foils were created by etching away the central area of W substrates. The diamond membrane was then supported by an annulus of W. Tungsten was selected as a ring-support material because of its high electrical and thermal conductivity, relatively low thermal expansion, and proven suitability as a substrate for diamond CVD. Warping or fracture of the diamond film after substrate etch-back was investigated

Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

Science.gov (United States)

Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

2016-05-03

Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

Energy Technology Data Exchange (ETDEWEB)

Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

2016-07-01

The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp{sup 3} network to sp{sup 2} as evidenced by an increase of the sp{sup 2} cluster and I{sub D}/I{sub G} ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp{sup 2} cluster and I{sub D}/I{sub G} ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp{sup 3}-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp{sup 3} and sp{sup 2} contents are estimated from C K-edge XANES and VB-PES measurements.

Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

2007-01-01

Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

Erratum to: Influence of boron doping on mechanical and tribological ...

Indian Academy of Sciences (India)

2016-08-26

Aug 26, 2016 ... Erratum to: Influence of boron doping on mechanical and tribological properties in multilayer CVD-diamond coating systems. SAJAD HUSSAIN DIN M A SHAH N A SHEIKH K A NAJAR K RAMASUBRAMANIAN S BALAJI M S RAMACHANDRA RAO. Volume 39 Issue 7 December 2016 pp 1763-1763 ...

Diamond nanoparticles as a support for Pt and PtRu catalysts for direct methanol fuel cells.

Science.gov (United States)

La-Torre-Riveros, Lyda; Guzman-Blas, Rolando; Méndez-Torres, Adrián E; Prelas, Mark; Tryk, Donald A; Cabrera, Carlos R

2012-02-01

Diamond in nanoparticle form is a promising material that can be used as a robust and chemically stable catalyst support in fuel cells. It has been studied and characterized physically and electrochemically, in its thin film and powder forms, as reported in the literature. In the present work, the electrochemical properties of undoped and boron-doped diamond nanoparticle electrodes, fabricated using the ink-paste method, were investigated. Methanol oxidation experiments were carried out in both half-cell and full fuel cell modes. Platinum and ruthenium nanoparticles were chemically deposited on undoped and boron doped diamond nanoparticles through the use of NaBH(4) as reducing agent and sodium dodecyl benzene sulfonate (SDBS) as a surfactant. Before and after the reduction process, samples were characterized by electron microscopy and spectroscopic techniques. The ink-paste method was also used to prepare the membrane electrode assembly with Pt and Pt-Ru modified undoped and boron-doped diamond nanoparticle catalytic systems, to perform the electrochemical experiments in a direct methanol fuel cell system. The results obtained demonstrate that diamond supported catalyst nanomaterials are promising for methanol fuel cells.

Degradation of creatinine using boron-doped diamond electrode: Statistical modeling and degradation mechanism.

Science.gov (United States)

Zhang, Zhefeng; Xian, Jiahui; Zhang, Chunyong; Fu, Degang

2017-09-01

This study investigated the degradation performance and mechanism of creatinine (a urine metabolite) with boron-doped diamond (BDD) anodes. Experiments were performed using a synthetic creatinine solution containing two supporting electrolytes (NaCl and Na 2 SO 4 ). A three-level central composite design was adopted to optimize the degradation process, a mathematical model was thus constructed and used to explore the optimum operating conditions. A maximum mineralization percentage of 80% following with full creatinine removal had been achieved within 120 min of electrolysis, confirming the strong oxidation capability of BDD anodes. Moreover, the results obtained suggested that supporting electrolyte concentration should be listed as one of the most important parameters in BDD technology. Lastly, based on the results from quantum chemistry calculations and LC/MS analyses, two different reaction pathways which governed the electrocatalytic oxidation of creatinine irrespective of the supporting electrolytes were identified. Copyright © 2017 Elsevier Ltd. All rights reserved.

Comparison of electrocatalytic characterization of boron-doped diamond and SnO2 electrodes

International Nuclear Information System (INIS)

Lv, Jiangwei; Feng, Yujie; Liu, Junfeng; Qu, Youpeng; Cui, Fuyi

2013-01-01

Boron-doped diamond (BDD) and SnO 2 electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) and sol–gel method, respectively. Electrochemical characterization of the two electrodes were investigated by phenol electrochemical degradation, accelerated service life test, cyclic voltammetry (CV) in phenol solution, polarization curves in H 2 SO 4 . The surface morphology and crystal structure of two electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. The results showed a considerable difference between the two electrodes in their electrocatalytic activity, electrochemical stability and surface properties. Phenol was readily mineralized to CO 2 at BDD electrode, favoring electrochemical combustion, but its degradation was much slower at SnO 2 electrode. The service life of BDD electrode was 10 times longer than that of SnO 2 . Higher electrocatalytic activity and electrochemical stability of BDD electrode arise from its high oxygen evolution potential and the physically absorbed hydroxyl radicals (·OH) on electrode surface.

Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

International Nuclear Information System (INIS)

Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin; Qu Jiuhui

2009-01-01

Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

Energy Technology Data Exchange (ETDEWEB)

Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu Jiuhui [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China)], E-Mail: jhqu@mail.rcees.ac.cn

2009-07-01

Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

International Nuclear Information System (INIS)

Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

2016-01-01

Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue

Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Hébert, Clément, E-mail: clement.hebert@icn2.cat [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Cottance, Myline [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Degardin, Julie [INSERM, U968, Institut de la Vision, Paris (France); Scorsone, Emmanuel [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Rousseau, Lionel; Lissorgues, Gaelle [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Bergonzo, Philippe [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Picaud, Serge [INSERM, U968, Institut de la Vision, Paris (France)

2016-12-01

Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue.

Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

Energy Technology Data Exchange (ETDEWEB)

Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

2012-07-01

This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

Quantum transport in boron-doped nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Kindl, Dobroslav; Nesládek, Miloš

2008-01-01

Roč. 14, č. 7-8 (2008), s. 161-172 ISSN 0948-1907 R&D Projects: GA ČR GA202/07/0525; GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond film * ballistic transport * superconductivity * Josephson’s effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

Degradation of microcystin-RR using boron-doped diamond electrode

International Nuclear Information System (INIS)

Zhang Chunyong; Fu Degang; Gu Zhongze

2009-01-01

Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (c NaCl ) and applied current density (I appl ). Full and quick removal of 0.50 μg/ml MC-RR in solution was achieved when the operating conditions of c NaCl and I appl were 20 mM and 46.3 mA/cm 2 , or 35 mM and 18.2 mA/cm 2 respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

Electrochemical incineration of chloromethylphenoxy herbicides in acid medium by anodic oxidation with boron-doped diamond electrode

International Nuclear Information System (INIS)

Boye, Birame; Brillas, Enric; Marselli, Beatrice; Michaud, Pierre-Alain; Comninellis, Christos; Farnia, Giuseppe; Sandona, Giancarlo

2006-01-01

The electrochemical degradation of saturated solutions of herbicides 4-chloro-2-methylphenoxyacetic acid, 2-(4-chlorophenoxy)-2-methylpropionic acid and 2-(4-chloro-2-methylphenoxy)propionic acid in 1 M HClO 4 on a boron-doped diamond (BDD) thin film anode has been studied by chronoamperometry, cyclic voltammetry and bulk electrolysis. At low anodic potentials polymeric products are formed causing the fouling and deactivation of BDD. This is reactivated at high potentials when water decomposes producing hydroxyl radical as strong oxidant of organics. Electrolyses in a batch recirculation system at constant current density ≥8 mA cm -2 yielded overall decontamination of all saturated solution. The effect of current density and herbicide concentration on the degradation rate of each compound, the specific charge required for its total mineralization and instantaneous current efficiency have been investigated. Experimental results have been compared with those predicted by a theoretical model based on a fast anodic oxidation of initial herbicides, showing that at 30 mA cm -2 their degradation processes are completely controlled by mass transfer. Kinetic analysis of the change of herbicide concentration with time during electrolysis, determined by high-performance liquid chromatography, revealed that all compounds follow a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids have been identified using this technique and a general pathway for the electrochemical incineration of all herbicides on BDD is proposed

Gas Permeation, Mechanical Behavior and Cytocompatibility of Ultrathin Pure and Doped Diamond-Like Carbon and Silicon Oxide Films

Directory of Open Access Journals (Sweden)

Juergen M. Lackner

2013-12-01

Full Text Available Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was a benchmarking of the mechanical oxygen permeation barrier, cytocompatibility, and microbiological properties of inorganic ~25 nm thin films, deposited by vacuum deposition techniques on 50 µm thin polyetheretherketone (PEEK foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source was applied to deposit pure and nitrogen doped diamond-like carbon films, while physical vapor deposition (magnetron sputtering in pulsed DC mode was used for the formation of silicon as well as titanium doped diamond-like carbon films. Silicon oxide films were deposited by radio frequency magnetron sputtering. The results indicate a strong influence of nanoporosity on the oxygen transmission rate for all coating types, while the low content of microporosity (particulates, etc. is shown to be of lesser importance. Due to the low thickness of the foil substrates, being easily bent, the toughness as a measure of tendency to film fracture together with the elasticity index of the thin films influence the oxygen barrier. All investigated coatings are non-pyrogenic, cause no cytotoxic effects and do not influence bacterial growth.

Energy gap and surface structure of superconducting diamond films probed by scanning tunneling microscopy

International Nuclear Information System (INIS)

Nishizaki, Terukazu; Takano, Yoshihiko; Nagao, Masanori; Takenouchi, Tomohiro; Kawarada, Hiroshi; Kobayashi, Norio

2007-01-01

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond at T = 0.47 K. The STM topography shows two kinds of atomic structures: a hydrogenated 1 x 1 structure, C(1 1 1)1 x 1:H, and an amorphous structure. On the C(1 1 1)1 x 1:H region, the tunneling spectra show superconducting property with the energy gap Δ = 0.83 meV. The obtained gap ratio 2Δ/k B T c = 3.57 is consistent with the weak-coupling BCS theory

N-type doped nano-diamond in a first MEMS application

Energy Technology Data Exchange (ETDEWEB)

Dipalo, M.; Kusterer, J.; Janischowsky, K.; Kohn, E. [Dept. of Electron Devices and Circuits, University of Ulm, Albert Einstein Allee 45, 89081 Ulm (Germany)

2006-09-15

Nanocrystalline diamond is an interesting material for MEMS applications especially due to its outstanding mechanical, electrical and electrochemical properties. The current choice for doping is boron, resulting in p-type conduction. It has two difficulties: firstly, at high concentration (as needed for full activation) the lattice becomes highly stressed and may degrade the material's quality. Secondly, it contaminates the growth chamber, resulting in a memory effect. A recent alternative is n-type nitrogen doping, avoiding these disadvantages. However, nitrogen is mainly incorporated in the grain boundaries and thus inhomogeneously distributed. In turn this may limit the material's stability. Here we present a first trial to use nitrogen-doped nanocrystalline diamond (NCD), grown by hot filament CVD, in a water microjet as heater element. No stability problems were encountered even at high overdrive power. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electrochemical oxidation of nitrogen-heterocyclic compounds at boron-doped diamond electrode.

Science.gov (United States)

Xing, Xuan; Zhu, Xiuping; Li, Hongna; Jiang, Yi; Ni, Jinren

2012-01-01

Nitrogen-heterocyclic compounds (NHCs) are toxic and bio-refractory contaminants widely spread in environment. This study investigated electrochemical degradation of NHCs at boron-doped diamond (BDD) anode with particular attention to the effect of different number and position of nitrogen atoms in molecular structure. Five classical NHCs with similar structures including indole (ID), quinoline (QL), isoquinoline (IQL), benzotriazole (BT) and benzimidazole (BM) were selected as the target compounds. Results of bulk electrolysis showed that degradation of all NHCs was fit to a pseudo first-order equation. The five compounds were degraded with the following sequence: ID>QL>IQL>BT>BM in terms of their rates of oxidation. Quantum chemical calculation was combined with experimental results to describe the degradation character of NHCs at BDD anode. A linear relationship between degradation rate and delocalization energy was observed, which demonstrated that electronic charge was redistributed through the conjugation system and accumulated at the active sites under the attack of hydroxyl radicals produced at BDD anode. Moreover, atom charge was calculated by semi empirical PM3 method and active sites of NHCs were identified respectively. Analysis of intermediates by GC-MS showed agreement with calculation results. Copyright © 2011 Elsevier Ltd. All rights reserved.

Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

International Nuclear Information System (INIS)

Xu Jiaxiong; Yao Ruohe

2011-01-01

Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

Anodic oxidation of slaughterhouse wastewater on boron-doped diamond: process variables effect.

Science.gov (United States)

Abdelhay, Arwa; Jum'h, Inshad; Abdulhay, Enas; Al-Kazwini, Akeel; Alzubi, Mashael

2017-12-01

A non-sacrificial boron-doped diamond electrode was prepared in the laboratory and used as a novel anode for electrochemical oxidation of poultry slaughterhouse wastewater. This wastewater poses environmental threats as it is characterized by a high content of recalcitrant organics. The influence of several process variables, applied current density, initial pH, supporting electrolyte nature, and concentration of electrocoagulant, on chemical oxygen demand (COD) removal, color removal, and turbidity removal was investigated. Results showed that raising the applied current density to 3.83 mA/cm 2 has a positive effect on COD removal, color removal, and turbidity removal. These parameters increased to 100%, 90%, and 80% respectively. A low pH of 5 favored oxidants generation and consequently increased the COD removal percentage to reach 100%. Complete removal of COD had occurred in the presence of NaCl (1%) as supporting electrolyte. Na 2 SO 4 demonstrated lower efficiency than NaCl in terms of COD removal. The COD decay kinetics follows the pseudo-first-order reaction. The simultaneous use of Na 2 SO 4 and FeCl 3 decreased the turbidity in wastewater by 98% due to electrocoagulation.

Boron-doped cadmium oxide composite structures and their electrochemical measurements

Energy Technology Data Exchange (ETDEWEB)

Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2013-08-01

Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

Highly sensitive electrochemical biosensor for bisphenol A detection based on a diazonium-functionalized boron-doped diamond electrode modified with a multi-walled carbon nanotube-tyrosinase hybrid film.

Science.gov (United States)

Zehani, Nedjla; Fortgang, Philippe; Saddek Lachgar, Mohamed; Baraket, Abdoullatif; Arab, Madjid; Dzyadevych, Sergei V; Kherrat, Rochdi; Jaffrezic-Renault, Nicole

2015-12-15

A highly sensitive electrochemical biosensor for the detection of Bisphenol A (BPA) in water has been developed by immobilizing tyrosinase onto a diazonium-functionalized boron doped diamond electrode (BDD) modified with multi-walled carbon nanotubes (MWCNTs). The fabricated biosensor exhibits excellent electroactivity towards o-quinone, a product of this enzymatic reaction of BPA oxidation catalyzed by tyrosinase. The developed BPA biosensor displays a large linear range from 0.01 nM to 100 nM, with a detection limit (LOD) of 10 pM. The feasibility of the proposed biosensor has been demonstrated on BPA spiked water river samples. Therefore, it could be a promising and reliable analytical tool for on-site monitoring of BPA in waste water. Copyright © 2015 Elsevier B.V. All rights reserved.

Correlation of CVD Diamond Electron Emission with Film Properties

Science.gov (United States)

Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

1996-03-01

Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

In vivo pH monitoring using boron doped diamond microelectrode and silver needles: Application to stomach disorder diagnosis

Science.gov (United States)

Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

2013-11-01

This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

A simple square-wave voltammetric method for the determination of scopolamine in pharmaceuticals using a boron-doped diamond electrode

Directory of Open Access Journals (Sweden)

Simone Birkheur Santos

2014-01-01

Full Text Available A simple procedure is described for the determination of scopolamine by square-wave voltammetry using a cathodically pretreated boron-doped diamond electrode. Cyclic voltammetry studies indicate that the oxidation of scopolamine is irreversible at a peak potential of 1.59 V (vs. Ag/AgCl (3.0 mol L-1 KCl in a 0.50 mol L-1 sulfuric acid solution. Under optimized conditions, the analytical curve obtained was linear (r = 0.9996 for the scopolamine concentration range of 1.0 to 110 µmol L-1, with a detection limit of 0.84 µmol L-1. The method was successfully applied to the determination of scopolamine in pharmaceutical formulations with minimum sample preparation.

Modifying thin film diamond for electronic applications

International Nuclear Information System (INIS)

Baral, B.

1999-01-01

The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

Directory of Open Access Journals (Sweden)

Ciprian Radovan

2008-06-01

Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

Anodic voltammetry of zolmitriptan at boron-doped diamond electrode and its analytical applications.

Science.gov (United States)

Uslu, B; Canbaz, D

2010-04-01

The electrooxidative behavior and determination of zolmitriptan at a boron-doped diamond electrode were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. Zolmitriptan undergoes irreversible oxidation at a peak potential of about +0.9 V (vs Ag/AgCl/3 M KCl). DPV and SWV techniques are proposed for the determination of zolmitriptan in phosphate buffer at pH 3.03, which allows quantitation over the two different ranges (8 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) in supporting electrolyte for both methods. A linear response was obtained in phosphate buffer over two different ranges (6 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) for spiked serum samples at pH 3.03 for both techniques. The repeatability and reproducibility of the methods for all media were determined. The standard addition method was used in serum. Precision and accuracy were also checked in all media. No electroactive interferences from the excipients and endegenous substances were found in the pharmaceutical dosage form and the biological sample, respectively.

Rapid and sensitive electrochemical determination of codeine in pharmaceutical formulations and human urine using a boron-doped diamond film electrode

International Nuclear Information System (INIS)

Švorc, Ľubomír; Sochr, Jozef; Svítková, Jana; Rievaj, Miroslav; Bustin, Dušan

2013-01-01

Highlights: ► Novel electrochemical sensor for the determination of codeine is presented. ► Codeine provided a single oxidation peak at +1.0 V vs. Ag/AgCl in BRBS at pH 7. ► Detection limit of 0.08 μM was achieved without electrode surface modification. ► Benefits of method: rapidity, low cost, low elaborateness and high repeatability. ► Possibility for drug quality control and drug analysis of biological samples. - Abstract: An unmodified boron-doped diamond film electrode was used for the first time as a sensitive and selective electrochemical sensor for the determination of codeine by the use of differential pulse voltammetry. Codeine provided a single well-defined oxidation peak at +1.0 V vs. Ag/AgCl in Britton-Robinson buffer solution at pH 7.0. Using the optimal differential pulse voltammetric conditions (modulation amplitude of 50 mV, modulation time of 40 ms and scan rate of 50 mV s −1 ), the detection limit of 0.08 μM, the linear response of peak current on codeine concentration in the range from 0.1 to 60 μM (R 2 = 0.998, n = 6) and relative standard deviation of 0.9% at 10 μM concentration level (n = 10) were achieved without any electrode surface modification. The influence of potential interfering agents on the current response was also studied and the results indicated that the proposed method was sufficiently selective. The method was successfully applied in the determination of codeine in real samples including pharmaceutical tablets and human urine with results similar to those declared by manufacturer and obtained by reference high-performance liquid chromatography method, respectively. The typical benefits of the method may be summarized as: rapidity (20 determinations per hour), sensitivity and selectivity, low cost and elaborateness, simplicity, wide linear concentration range, low detection limit and excellent repeatability. It might also represent the competitive alternative to the existing analytical methods in monitoring of

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

Science.gov (United States)

Khun, N W; Liu, E

2010-07-01

Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films.

Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

NARCIS (Netherlands)

Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

2013-01-01

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

Electrochemically deposited Cu{sub 2}O cubic particles on boron doped diamond substrate as efficient photocathode for solar hydrogen generation

Energy Technology Data Exchange (ETDEWEB)

Mavrokefalos, Christos K. [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Hasan, Maksudul, E-mail: maksudul.hasan@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Rohan, James F. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Compton, Richard G. [Department of Chemistry, Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, England (United Kingdom); Foord, John S., E-mail: john.foord@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom)

2017-06-30

Highlights: • Fabrication of low-cost photocathode by electrochemical method is described. • Boron-doped diamond is presented as catalyst support. • NiO nanoparticles on Cu{sub 2}O surface enhances photocurrent and electrode stability. • Synergy of metallic interaction between Cu and Ni leads to high efficiency. - Abstract: Herein, we report a novel photocathode for the water splitting reaction. The electrochemical deposition of Cu{sub 2}O particles on boron doped diamond (BDD) electrodes and the subsequent decoration with NiO nanoparticles by a dip coating method to act as co-catalyst for hydrogen evolution reaction is described. The morphology analysis by scanning electron microscope (SEM) revealed that Cu{sub 2}O particles are cubic and decorated sporadically with NiO nanoparticles. X-ray photoelectron spectroscopy (XPS) confirmed the electronic interaction at the interface between Cu{sub 2}O and NiO through a binding energy shift of the main Cu 2p peak. The photoelectrochemical (PEC) performance of NiO-Cu{sub 2}O/BDD showed a much higher current density (−0.33 mA/cm{sup 2}) and photoconversion efficiency (0.28%) compared to the unmodified Cu{sub 2}O/BDD electrode, which are only −0.12 mA/cm{sup 2} and 0.06%, respectively. The enhancement in PEC performance is attributable to the synergy of NiO as an electron conduction mediator leading to the enhanced charge separation and transfer to the reaction interface for hydrogen evolution as evidenced by electrochemical impedance spectroscopy (EIS) and charge carrier density calculation. Stability tests showed that the NiO nanoparticles loading content on Cu{sub 2}O surface is a crucial parameter in this regard.

Metal ion analysis in contaminated water samples using anodic stripping voltammetry and a nanocrystalline diamond thin-film electrode

International Nuclear Information System (INIS)

Sonthalia, Prerna; McGaw, Elizabeth; Show, Yoshiyuki; Swain, Greg M.

2004-01-01

Boron-doped nanocrystalline diamond thin-film electrodes were employed for the detection and quantification of Ag (I), Cu (II), Pb (II), Cd (II), and Zn (II) in several contaminated water samples using anodic stripping voltammetric (ASV). Diamond is an alternate electrode that possesses many of the same attributes as Hg and, therefore, appears to be a viable material for this electroanalytical measurement. The nanocrystalline form has been found to perform slightly better than the more conventional microcrystalline form of diamond in this application. Differential pulse voltammetry (DPASV) was used to detect these metal ions in lake water, well water, tap water, wastewater treatment sludge, and soil. The electrochemical results were compared with data from inductively coupled plasma mass spectrometric (ICP-MS) and or atomic absorption spectrometric (AAS) measurements of the same samples. Diamond is shown to function well in this electroanalytical application, providing a wide linear dynamic range, a low limit of quantitation, excellent response precision, and good response accuracy. For the analysis of Pb (II), bare diamond provided a response nearly identical to that obtained with a Hg-coated glassy carbon electrode

Influence of electroformation regime on the specific properties of cobalt oxide‒platinum composite films deposited on conductive diamond

Energy Technology Data Exchange (ETDEWEB)

Spătaru, Tanţa; Osiceanu, Petre; Preda, Loredana; Munteanu, Cornel [Institute of Physical Chemistry “Ilie Murgulescu”, 202 Spl. Independenţei 060021, Bucharest (Romania); Spătaru, Nicolae, E-mail: nspataru@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, 202 Spl. Independenţei 060021, Bucharest (Romania); Fujishima, Akira [Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku Tokyo 162-8601 (Japan)

2014-04-01

Two straightforward electrochemical methods were used in the present work for depositing cobalt oxide-platinum composite films on boron-doped diamond substrates in order to put into evidence the effect of the electroformation regime on the morphological and electrochemical features of these hybrid systems. The shift from potentiostatic to potentiodynamic deposition enabled not only a significant improvement of the Pt particles dispersion but also a much higher surface concentration of oxygenated species of platinum. For similar Co{sub 3}O{sub 4} and Pt loadings, the specific capacitance of the composite films deposited by cyclic voltammetry was with ca. 8% higher than that of the potentiostatically obtained ones. Additional advantage of potentiodynamic deposition is the improved resistance to fouling during methanol anodic oxidation of Pt particles, tentatively ascribed to the higher surface concentration of oxygenated species of platinum. - Highlights: • Cobalt oxide-platinum composite films were electrodeposited on conductive diamond. • Composite films formed by cyclic voltammetry exhibit enhanced specific capacitance. • Potentiodynamic deposition enables higher concentration of oxygenated Pt species. • Co{sub 3}O{sub 4}–Pt films prepared by cyclic voltammetry are less susceptible to CO poisoning.

Fabrication and electrochemistry characteristics of nickel-doped diamond-like carbon film toward applications in non-enzymatic glucose detection

Science.gov (United States)

Liu, Chi-Wen; Chen, Wei-En; Sun, Yin Tung Albert; Lin, Chii-Ruey

2018-04-01

This research work focused on the fabrication of nickel-doped diamond-like carbon (DLC) films and their characteristics including of surface morphology, microstructure, and electrochemical aiming at applications in non-enzymatic glucose detection. Novel nanodiamond target was employed in unbalanced magnetron radio-frequency co-sputtering process to prepared high quality Ni-doped DLC thin film at room temperature. TEM analysis reveals a highly uniform distribution of Ni crystallites in amorphous carbon matrix with fraction ranged from 3 to 11.5 at.% which is considered as active sites for the glucose detection. Our cyclic voltammetry measurements using 0.1 M H2SO4 solution demonstrated that the as-prepared Ni-doped DLC films possess large electrochemical potential window of 2.12 V, and this was also observed to be significantly reduced at high Ni doping level owing to lower sp3 fraction. The non-enzymatic glucose detection investigation indicates that the Ni-doped DLC thin film electrode prepared under 7 W of DC sputtering power on Ni target possesses good detecting performance, high stability, and high sensitivity to glucose concentration up to 10 mM, even with the existence of uric acid and ascorbic acid. The peak current was observed to be proportional to glucose concentration and scanning rate, demonstrating highly reversibility redox process of the film electrode and glucose.

Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing

Energy Technology Data Exchange (ETDEWEB)

Hébert, Clément, E-mail: clement.hebert@cea.fr [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Warnking, Jan; Depaulis, Antoine [INSERM, U836, Grenoble Institut des Neurosciences, Grenoble (France); Garçon, Laurie Amandine [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); CEA/INAC/SPrAM/CREAB, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Mermoux, Michel [Université Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Eon, David [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Mailley, Pascal [CEA-LETI-DTBS Minatec, 17 rue des Martyres, 38054 Grenoble (France); Omnès, Franck [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

2015-01-01

Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. - Highlights: • Microfabrication of all-diamond microelectrode array • Evaluation of as-grown nanocrystalline boron-doped diamond for electrical neural interfacing • MRI compatibility of nanocrystalline boron-doped diamond.

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.

Science.gov (United States)

Afandi, Abdulkareem; Howkins, Ashley; Boyd, Ian W; Jackman, Richard B

2018-02-19

The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~10 17 B cm -3 ), is found alongside the observation that some particles are heavily doped (~10 20 B cm -3 ) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

Directory of Open Access Journals (Sweden)

Cui Xia Yan et al

2008-01-01

Full Text Available We have implanted boron (B ions (dosage: 5×1014 cm-2 into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.

Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

2015-10-05

Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

2013-09-15

A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

International Nuclear Information System (INIS)

Paviet-Salomon, B.; Gall, S.; Slaoui, A.

2013-01-01

Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

Comparison of glassy carbon and boron doped diamond electrodes: Resistance to biofouling

Energy Technology Data Exchange (ETDEWEB)

Trouillon, Raphael, E-mail: raphael.trouillon06@imperial.ac.u [Department of Bioengineering, Imperial College London, Royal School of Mines Building, London SW7 2AZ (United Kingdom); O' Hare, Danny [Department of Bioengineering, Imperial College London, Royal School of Mines Building, London SW7 2AZ (United Kingdom)

2010-09-01

Carbon based electrodes are widely used for in vivo and in vitro electrochemical studies. In particular, monoamine neurochemistry has been investigated using carbon microfibre electrodes. Similarly, glassy carbon (GC) is the preferred material for many biochemical applications, such as electrochemical detection in chromatography. More recently, boron doped diamond (BDD) has been utilized for biosensing, as its carbon sp{sup 3} structure is expected to provide better resistance to analyte fouling. However, the main factor limiting the use of electrochemical sensors for biological studies is the effect of the biological matrix. Indeed, in vivo or in situ measurements expose the sensor to a complex matrix of proteins, which adsorb on the sensing surface and interfere with the electrochemical measurements. Here, we compare the performance of three carbon based electrodes: GC, GC with low surface oxides and BDD. The redox species ruthenium(III) hexaammine (outer-sphere), ferrocyanide (surface sensitive) and the biologically significant dopamine have been investigated in protein and blood-mimicking matrices. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to examine the effect of spectator molecules and reaction products on electrode mechanisms. Our results show that BDD generally exhibits the best performance for most conditions and reactions and should therefore be preferred for measurements in biologically fouling environments. Furthermore, surface oxides seem also to improve resistance of the GC electrode to biofouling.

Comparison of glassy carbon and boron doped diamond electrodes: Resistance to biofouling

International Nuclear Information System (INIS)

Trouillon, Raphael; O'Hare, Danny

2010-01-01

Carbon based electrodes are widely used for in vivo and in vitro electrochemical studies. In particular, monoamine neurochemistry has been investigated using carbon microfibre electrodes. Similarly, glassy carbon (GC) is the preferred material for many biochemical applications, such as electrochemical detection in chromatography. More recently, boron doped diamond (BDD) has been utilized for biosensing, as its carbon sp 3 structure is expected to provide better resistance to analyte fouling. However, the main factor limiting the use of electrochemical sensors for biological studies is the effect of the biological matrix. Indeed, in vivo or in situ measurements expose the sensor to a complex matrix of proteins, which adsorb on the sensing surface and interfere with the electrochemical measurements. Here, we compare the performance of three carbon based electrodes: GC, GC with low surface oxides and BDD. The redox species ruthenium(III) hexaammine (outer-sphere), ferrocyanide (surface sensitive) and the biologically significant dopamine have been investigated in protein and blood-mimicking matrices. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to examine the effect of spectator molecules and reaction products on electrode mechanisms. Our results show that BDD generally exhibits the best performance for most conditions and reactions and should therefore be preferred for measurements in biologically fouling environments. Furthermore, surface oxides seem also to improve resistance of the GC electrode to biofouling.

Parabens abatement from surface waters by electrochemical advanced oxidation with boron doped diamond anodes.

Science.gov (United States)

Domínguez, Joaquín R; Muñoz-Peña, Maria J; González, Teresa; Palo, Patricia; Cuerda-Correa, Eduardo M

2016-10-01

The removal efficiency of four commonly-used parabens by electrochemical advanced oxidation with boron-doped diamond anodes in two different aqueous matrices, namely ultrapure water and surface water from the Guadiana River, has been analyzed. Response surface methodology and a factorial, composite, central, orthogonal, and rotatable (FCCOR) statistical design of experiments have been used to optimize the process. The experimental results clearly show that the initial concentration of pollutants is the factor that influences the removal efficiency in a more remarkable manner in both aqueous matrices. As a rule, as the initial concentration of parabens increases, the removal efficiency decreases. The current density also affects the removal efficiency in a statistically significant manner in both aqueous matrices. In the water river aqueous matrix, a noticeable synergistic effect on the removal efficiency has been observed, probably due to the presence of chloride ions that increase the conductivity of the solution and contribute to the generation of strong secondary oxidant species such as chlorine or HClO/ClO - . The use of a statistical design of experiments made it possible to determine the optimal conditions necessary to achieve total removal of the four parabens in ultrapure and river water aqueous matrices.

Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

International Nuclear Information System (INIS)

Liu Ai-Ping; Liu Min; Yu Jian-Can; Qian Guo-Dong; Tang Wei-Hua

2015-01-01

Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. (paper)

Elastic properties of ultrathin diamond/AlN membranes

International Nuclear Information System (INIS)

Zuerbig, V.; Hees, J.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Kirste, L.; Heidrich, N.; Nebel, C.E.; Ambacher, O.; Lebedev, V.

2014-01-01

Nanocrystalline diamond- (NCD) and AlN-based ultrathin single layer and bilayer membranes are investigated towards their mechanical properties. It is shown that chemo-mechanical polishing and heavy boron doping of NCD thin films do not impact the elastic properties of NCD layers as revealed by negligible variations of the NCD Young's modulus (E). In addition, it is demonstrated that the combination of NCD elastic layer and AlN piezo-actuator is highly suitable for the fabrication of mechanically stable ultrathin membranes in comparison to AlN single layer membranes. The elastic parameters of NCD/AlN heterostructures are mainly determined by the outstanding high Young's modulus of NCD (E = 1019 ± 19 GPa). Such ultrathin unimorph membranes allow for fabrication of piezo-actuated AlN/NCD microlenses with tunable focus length. - Highlights: • Mechanical properties of nanocrystalline diamond (NCD) and AlN circular membranes • No influence of polishing of NCD thin films on the mechanical properties of NCD • No influence of heavy boron-doping on the mechanical properties of NCD • Demonstration of mechanically stable piezo-actuated NCD/AlN membranes • Reported performance of AlN/NCD microlenses with adjustable focus length

The interplay between hydrogen evolution reaction and nitrate reduction on boron-doped diamond in aqueous solution: the effect of alkali cations

International Nuclear Information System (INIS)

Manzo-Robledo, A.; Lévy-Clément, C.; Alonso-Vante, N.

2014-01-01

The nitrate ion reduction was studied on boron-doped diamond (BDD) electrodes by real-time on-line differential electrochemical mass spectrometry (DEMS) coupled with chronoamperometry in K + , Na + cation-containing electrolyte solutions. It was found, via steady state voltammetry, that the hydrogen evolution reaction (HER) was affected by the presence of K + or Na + . A moderate HER occurs in K + -containing electrolyte solution favoring the reaction between NO 3 − and H 2 species, whereas in Na + -containing electrolyte solutions, the HER kinetics was more important leading to a suppression of molecular nitrogen generation. The use of isotope-labeled nitrogen and DEMS confirmed the influence of alkali cations toward the nitrate ion reduction

Detection of trace levels of Pb2+ in tap water at boron-doped diamond electrodes with anodic stripping voltammetry

International Nuclear Information System (INIS)

Dragoe, Diana; Spataru, Nicolae; Kawasaki, Ryuji; Manivannan, Ayyakkannu; Spataru, Tanta; Tryk, Donald A.; Fujishima, Akira

2006-01-01

Boron-doped diamond (BDD) electrodes were used to investigate the possibility of detecting trace levels of lead by linear-sweep anodic stripping voltammetry. The low limit of detection (2 nM) is an advantage compared to other electrode materials, and it was found that at low pH values, copper concentrations that are usually present in drinking water do not affect to a large extent the detection of lead. These findings recommend anodic stripping voltammetry at the BDD electrodes as a suitable mercury-free method for the determination of trace levels of lead in drinking water. The results obtained for the lead detection in tap water real samples are in excellent agreement with those found by inductively coupled plasma-mass spectrometry (ICP-MS), demonstrating the practical analytical utility of the method

Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

Directory of Open Access Journals (Sweden)

Xiaowei Li

2015-01-01

Full Text Available Structure and properties of Cu-doped diamond-like carbon films (DLC were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.% on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

Experimental studies of N~+ implantation into CVD diamond thin films

Institute of Scientific and Technical Information of China (English)

辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

1997-01-01

The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Ultra-nanocrystalline diamond nanowires with enhanced electrochemical properties

International Nuclear Information System (INIS)

Shalini, Jayakumar; Lin, Yi-Chieh; Chang, Ting-Hsun; Sankaran, Kamatchi Jothiramalingam; Chen, Huang-Chin; Lin, I.-Nan; Lee, Chi-Young; Tai, Nyan-Hwa

2013-01-01

The effects of N 2 incorporation in Ar/CH 4 plasma on the electrochemical properties and microstructure of ultra-nanocrystalline diamond (UNCD) films are reported. While the electrical conductivity of the films increased monotonously with increasing N 2 content (up to 25%) in the plasma, the electrochemical behavior was optimized for UNCD films grown in (Ar–10% N 2 )/CH 4 plasma. Transmission electron microscopy showed that the main factor resulting in high conductivity in the films was the formation of needle-like nanodiamond grains and the induction graphite layer encapsulating these grains. The electrochemical process for N 2 -incorporated UNCD films can readily be activated due to the presence of nanographite along the grain boundaries of the films. The formation of needle-like diamond grains was presumably due to the presence of CN species that adhered to the existing nanodiamond clusters, which suppressed radial growth of the nanodiamond crystals, promoting anisotropic growth and the formation of needle-like nanodiamond. The N 2 -incorporated UNCD films outperformed other electrochemical electrode materials, such as boron-doped diamond and glassy carbon, in that the UNCD electrodes could sense dopamine, urea, and ascorbic acid simultaneously in the same mixture with clear resolution

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

Energy Technology Data Exchange (ETDEWEB)

Strąkowska, Paulina [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Beutner, René [Max Bergmann Center, Technische Universität Dresden (Germany); Gnyba, Marcin [Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Zielinski, Andrzej [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Scharnweber, Dieter, E-mail: Dieter.Scharnweber@tu-dresden.de [Max Bergmann Center, Technische Universität Dresden (Germany)

2016-02-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

International Nuclear Information System (INIS)

Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

2016-01-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiuping [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China); Ni, Jinren, E-mail: nijinren@iee.pku.edu.cn [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China); Wei, Junjun; Xing, Xuan; Li, Hongna [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China)

2011-05-15

Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12 h, the COD was decreased from 532 to 99 mg L{sup -1} (<100 mg L{sup -1}, the National Discharge Standard of China). More importantly, the destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters.

Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode.

Science.gov (United States)

Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

2011-05-15

Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12h, the COD was decreased from 532 to 99 mg L(-1) (destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters. Copyright © 2011 Elsevier B.V. All rights reserved.

Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode

International Nuclear Information System (INIS)

Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

2011-01-01

Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12 h, the COD was decreased from 532 to 99 mg L -1 ( -1 , the National Discharge Standard of China). More importantly, the destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters.

Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

Science.gov (United States)

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

Vertically aligned nanowires from boron-doped diamond.

Science.gov (United States)

Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

2008-11-01

Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

Institute of Scientific and Technical Information of China (English)

HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

2009-01-01

The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

Structure prediction of boron-doped graphene by machine learning

Science.gov (United States)

M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

2018-06-01

Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

Electrochemical degradation of a real textile effluent using boron-doped diamond or β-PbO2 as anode

International Nuclear Information System (INIS)

Aquino, Jose M.; Pereira, Gabriel F.; Rocha-Filho, Romeu C.; Bocchi, Nerilso; Biaggio, Sonia R.

2011-01-01

Highlights: · Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. · Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl - ions. · Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. · PbO 2 anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/β-PbO 2 anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L -1 ) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/β-PbO 2 anode, at any experimental condition. The best conditions are j = 5 mA cm -2 and 55 o C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q ap ) of only about 2 kA h m -3 . Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q ap value of only 7 kA h m -3 , with an energy consumption of about 30 kW h m -3 . This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

Science.gov (United States)

Read, Tania L; Macpherson, Julie V

2016-01-06

Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

Science.gov (United States)

Read, Tania L.; Macpherson, Julie V.

2016-01-01

Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp2 carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail. PMID:26779959

Raman spectroscopy of boron-doped single-layer graphene.

Science.gov (United States)

Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

2012-07-24

The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

Voltammetric determination of mixtures of caffeine and chlorogenic acid in beverage samples using a boron-doped diamond electrode.

Science.gov (United States)

Yardım, Yavuz; Keskin, Ertugrul; Şentürk, Zühre

2013-11-15

Herein, a boron-doped diamond (BDD) electrode that is anodically pretreated was used for the simultaneous determination of caffeine (CAF) and chlorogenic acid (CGA) by cyclic and adsorptive stripping voltammetry. The dependence of peak current and potential on pH, scan rate, accumulation parameters and other experimental variables were studied. By using square-wave stripping mode after 60 s accumulation under open-circuit voltage, the BDD electrode was able to separate the oxidation peak potentials of CAF and CGA present in binary mixtures by about 0.4V in Britton-Robinson buffer at pH 1.0. The limits of detection were 0.107 µg mL(-1) (5.51×10(-7) M) for CAF, and 0.448 µg mL(-1) (1.26×10(-6) M) for CGA. The practical applicability of this methodology was tested in commercially available beverage samples. © 2013 Elsevier B.V. All rights reserved.

Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica

Directory of Open Access Journals (Sweden)

Leide Lili Gonçalves da Silva

1999-04-01

Full Text Available Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 mm average size

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sankaran, Kamatchi J.; Haenen, Ken [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Ryl, Jacek; Darowicki, Kazimierz [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, Robert [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Lin, I-Nan [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

2016-06-13

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

Diamond film growth with modification properties of adhesion between substrate and diamond film

Directory of Open Access Journals (Sweden)

Setasuwon P.

2004-03-01

Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

Structural and photoelectrochemical investigation of boron-modified nanostructured tungsten trioxide films

International Nuclear Information System (INIS)

Barczuk, Piotr J.; Krolikowska, Agata; Lewera, Adam; Miecznikowski, Krzysztof; Solarska, Renata; Augustynski, Jan

2013-01-01

We report a modification of nanostructured WO 3 films by doping with boron. The films were obtained by a direct one-step sol–gel route involving tungstic acid/polyethelene glycol precursor. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the incorporation of boron results in the retention of a substantial amount of water and/or hydroxyl groups in the WO 3 lattice and at the surface of nanoparticles occurring despite high temperature (550 °C) annealing of the films. Another consequence of boron doping is the largely increased roughness factor revealed by atomic force microscopy (AFM) imaging. Both kinds of films are highly porous and consist of partly sintered particles with sizes in the range of tens of nanometers. The photoelectrochemical (PEC) studies performed under simulated solar AM 1.5 illumination showed significantly enhanced water oxidation photocurrents for B-WO 3 photoanodes, by about 25% higher than those for the undoped WO 3 films of similar thickness. The low extent of recombination of photogenerated charges was confirmed by incident photon-to-current conversion efficiencies (IPCEs) reaching 70% in the region of visible wavelengths at 420 nm. The improved PEC properties were attributed to the increased surface hydroxylation of B-WO 3 nanoparticles favoring water photo-oxidation reaction and to the larger surface area of the film exposed to the electrolyte

Concentration and electrode material dependence of the voltammetric response of iodide on platinum, glassy carbon and boron-doped diamond in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide

International Nuclear Information System (INIS)

Bentley, Cameron L.; Bond, Alan M.; Hollenkamp, Anthony F.; Mahon, Peter J.; Zhang, Jie

2013-01-01

The electro-oxidation of iodide has been investigated as a function of concentration using steady-state microelectrode voltammetry, transient cyclic voltammetry and linear-sweep semi-integral voltammetry on platinum, glassy carbon and boron-doped diamond electrodes in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide. Two oxidation processes are observed on all of the investigated electrode materials, with the first being assigned to the oxidation of iodide to triiodide (confirmed by UV/visible spectroscopy) and the second being attributed to the oxidation of triiodide to iodine. Iodide oxidation is kinetically more facile on platinum compared to glassy carbon or boron-doped diamond. At elevated bulk iodide concentrations, the nucleation and growth of sparingly soluble electrogenerated iodine at the electrode surface was observed and imaged in situ using optical microscopy. The diffusion coefficient of iodide was determined to be 2.59 (±0.04) × 10 −7 cm 2 s −1 and independent of the bulk concentration of iodide. The steady-state iodide oxidation current measured at a platinum microelectrode was found to be a linear function of iodide concentration, as expected if there are no contributions from non-Stokesian mass-transport processes (electron hopping and/or Grotthuss-type exchange) under the investigated conditions

Boron-doped diamond electrodes for the electrochemical oxidation and cleavage of peptides.

Science.gov (United States)

Roeser, Julien; Alting, Niels F A; Permentier, Hjalmar P; Bruins, Andries P; Bischoff, Rainer

2013-07-16

Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy carbon (GC) electrodes for the electrochemical oxidation and cleavage of peptides. An optimal working potential of 2000 mV was chosen to ensure oxidation of peptides on BDD by electron transfer processes only. Oxidation by electrogenerated OH radicals took place above 2500 mV on BDD, which is undesirable if cleavage of a peptide is to be achieved. BDD showed improved cleavage yield and reduced adsorption for a set of small peptides, some of which had been previously shown to undergo electrochemical cleavage C-terminal to tyrosine (Tyr) and tryptophan (Trp) on porous carbon electrodes. Repeated oxidation with BDD electrodes resulted in progressively lower conversion yields due to a change in surface termination. Cathodic pretreatment of BDD at a negative potential in an acidic environment successfully regenerated the electrode surface and allowed for repeatable reactions over extended periods of time. BDD electrodes are a promising alternative to GC electrodes in terms of reduced adsorption and fouling and the possibility to regenerate them for consistent high-yield electrochemical cleavage of peptides. The fact that OH-radicals can be produced by anodic oxidation of water at elevated positive potentials is an additional advantage as they allow another set of oxidative reactions in analogy to the Fenton reaction, thus widening the scope of electrochemistry in protein and peptide chemistry and analytics.

Enhanced Growth and Osteogenic Differentiation of Human Osteoblast-Like Cells on Boron-Doped Nanocrystalline Diamond Thin Films

Czech Academy of Sciences Publication Activity Database

Grausová, Ľubica; Kromka, Alexander; Burdíková, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacík, Jiří; Haenen, K.; Lisá, Věra; Bačáková, Lucie

2011-01-01

Roč. 6, č. 6 (2011), e20943 E-ISSN 1932-6203 R&D Projects: GA AV ČR(CZ) KAN400480701; GA AV ČR(CZ) IAAX00100902; GA ČR(CZ) GAP108/11/0794 Grant - others:GA AV ČR(CZ) KAN400100701 Program:KA Institutional research plan: CEZ:AV0Z50110509; CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : osteoblast-like cells * boron * NCD films Subject RIV: EI - Biotechnology ; Bionics Impact factor: 4.092, year: 2011

Electrochemical oxidation and electroanalytical determination of xylitol at a boron-doped diamond electrode.

Science.gov (United States)

Lourenço, Anabel S; Sanches, Fátima A C; Magalhães, Renata R; Costa, Daniel J E; Ribeiro, Williame F; Bichinho, Kátia M; Salazar-Banda, Giancarlo R; Araújo, Mário C U

2014-02-01

Xylitol is a reduced sugar with anticariogenic properties used by insulin-dependent diabetics, and which has attracted great attention of the pharmaceutical, cosmetics, food and dental industries. The detection of xylitol in different matrices is generally based on separation techniques. Alternatively, in this paper, the application of a boron-doped diamond (BDD) electrode allied to differing voltammetric techniques is presented to study the electrochemical behavior of xylitol, and to develop an analytical methodology for its determination in mouthwash. Xylitol undergoes two oxidation steps in an irreversible diffusion-controlled process (D=5.05 × 10(-5)cm(2)s(-1)). Differential pulse voltammetry studies revealed that the oxidation mechanism for peaks P1 (3.4 ≤ pH ≤ 8.0), and P2 (6.0 ≤ pH ≤ 9.0) involves transfer of 1H(+)/1e(-), and 1e(-) alone, respectively. The oxidation process P1 is mediated by the (•)OH generated at the BDD hydrogen-terminated surface. The maximum peak current was obtained at a pH of 7.0, and the electroanalytical method developed, (employing square wave voltammetry) yielded low detection (1.3 × 10(-6) mol L(-1)), and quantification (4.5 × 10(-6) mol L(-1)) limits, associated with good levels of repeatability (4.7%), and reproducibility (5.3%); thus demonstrating the viability of the methodology for detection of xylitol in biological samples containing low concentrations. © 2013 Elsevier B.V. All rights reserved.

Anodic stripping voltammetry of synthesized CdS nanoparticles at boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Hayat, Mohammad; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Saepudin, Endang [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan)

2016-04-19

Cadmium sulphide (CdS) nanoparticles were chemically synthesized using reverse micelles microreactor methods. By using different washing treatments, UV-Vis spectroscopy showed that the absorption peaks appeared at 465 nm, 462 nm, 460 nm, and 459 nm respectively for CdS nanoparticles without and with 1, 2, and 3 times washing treatments using pure water. In comparison with the absorbance peak of bulk CdS at 512 nm, the shifted absorption peaks, indicates that the different sizes of CdS can be prepared. Anodic stripping voltammetry of the CdS nanoparticles was then studied at a boron-doped diamond electrode using 0.1 M KClO{sub 4} and 0.1 M HClO{sub 4} as the electrolytes. A scan rate of 100 mV/s with a deposition potential of -1000 mV (vs. Ag/AgCl) for 60 s at a potential scan from -1600 mV to +800 mV (vs. Ag/AgCl) was applied as the optimum condition of the measurements. Highly-accurate linear calibration curves (R{sup 2} = 0.99) in 0.1 M HClO{sub 4} with the sensitivity of 0.075 mA/mM and the limit of detection of 81 µM in 0.1 M HClO{sub 4} can be achieved, which is promising for an application of CdS nanoparticles as a label for biosensors.

The Use of Boron-doped Diamond Electrode on Yeast-based Microbial Fuel Cell for Electricity Production

Science.gov (United States)

Hanzhola, G.; Tribidasari, A. I.; Endang, S.

2018-01-01

The dependency of fossil energy in Indonesia caused the crude oil production to be drastically decreased since 2001, while energy consumption increased. In addition, The use of fossil energy can cause several environmental problems. Therefore, we need an alternative environment-friendly energy as solution for these problems. A microbial fuel cell is one of the prospective alternative source of an environment-friendly energy source to be developed. In this study, Boron-doped diamond electrode was used as working electrode and Candida fukuyamaensis as biocatalyst in microbial fuel cell. Different pH of anode compartment (pH 6.5-7.5) and mediator concentration (10-100 μM) was used to produce an optimal electricity. MFC was operated for 3 hours. During operation, the current and voltage density was measured with potensiostat. The maximum power and current density are 425,82 mW/m2 and 440 mA/m2, respectively, for MFC using pH 7.5 at anode compartment without addition of methylene blue. The addition of redox mediator is lowering the produced electricity because of its anti microbial properties that can kill the microbe.

Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

Science.gov (United States)

Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

2015-04-01

The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

International Nuclear Information System (INIS)

Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

2016-01-01

Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C 2 H 2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C 2 H 2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C 2 H 2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C 2 H 2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus

Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho, Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

2014-03-15

This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

International Nuclear Information System (INIS)

Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos

2014-01-01

This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L -1 H 2 SO 4 solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L -1 (r 2 = 0.999), with a detection limit of 7.1 μmol L -1 for PC and 3.8 μmol L -1 for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

Science.gov (United States)

Liu, Ai-Ping; Liu, Min; Yu, Jian-Can; Qian, Guo-Dong; Tang, Wei-Hua

2015-05-01

Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272237, 51272231, and 51010002) and the China Postdoctoral Science Foundation (Grant Nos. 2012M520063, 2013T60587, and Bsh1201016).

Electrophoretic preparation and characterization of porous electrodes from diamond nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Riveros, Lyda La Torre; Soto, Keyla; Tryk, Donald A; Cabrera, Carlos R [Department of Chemistry and Center of Nanoscale Materials, University of Puerto Rico, Rio Piedras, PO Box 23346 San Juan, PR 00931-3346 (Puerto Rico)

2007-04-15

We carried out chemical purification of commercially available diamond nanoparticles by refluxing in aqueous HNO{sub 3} and characterized the samples by spectroscopic and surface techniques before and after purification. As a first step in the preparation of electrodes for electrochemistry, we have electrophoretically deposited thin, highly uniform films of controlled thickness (1-8 {mu}m) on silicon substrates using the purified diamond nanoparticles. These have been characterized by scanning electron microscopy (SEM). All films obtained were homogeneous in thickness and without macroscopic holes or cracks. Such structures could also be used in many other applications such as fuel cells or lithium batteries. We have performed cyclic voltammetry experiments with these electrodes. The voltammograms of diamond nanoparticles electrophoretically deposited on silicon indicate hydrogen evolution. This demonstrates that the material is useful as electrocatalitic support. This conclusion is supported by the cyclic voltammograms obtained using ferrycyanide (III) chloride and hexaamineruthenium (III) chloride complexes as redox probes. However, these redox probes showed very small peak currents. This behavior could be improved by doping the diamond nanoparticles with an impurity such as boron.

Electrophoretic preparation and characterization of porous electrodes from diamond nanoparticles

International Nuclear Information System (INIS)

Riveros, Lyda La Torre; Soto, Keyla; Tryk, Donald A; Cabrera, Carlos R

2007-01-01

We carried out chemical purification of commercially available diamond nanoparticles by refluxing in aqueous HNO 3 and characterized the samples by spectroscopic and surface techniques before and after purification. As a first step in the preparation of electrodes for electrochemistry, we have electrophoretically deposited thin, highly uniform films of controlled thickness (1-8 μm) on silicon substrates using the purified diamond nanoparticles. These have been characterized by scanning electron microscopy (SEM). All films obtained were homogeneous in thickness and without macroscopic holes or cracks. Such structures could also be used in many other applications such as fuel cells or lithium batteries. We have performed cyclic voltammetry experiments with these electrodes. The voltammograms of diamond nanoparticles electrophoretically deposited on silicon indicate hydrogen evolution. This demonstrates that the material is useful as electrocatalitic support. This conclusion is supported by the cyclic voltammograms obtained using ferrycyanide (III) chloride and hexaamineruthenium (III) chloride complexes as redox probes. However, these redox probes showed very small peak currents. This behavior could be improved by doping the diamond nanoparticles with an impurity such as boron

Boron-Doped Diamond (BDD) Coatings Protect Underlying Silicon in Aqueous Acidic Media–Application to the Hydrogen Evolution Reaction

International Nuclear Information System (INIS)

Halima, A.F.; Rana, U.A.; MacFarlane, D.R.

2014-01-01

Abstract: Silicon has potential application as a functional semiconductor electrode in proposed solar water splitting cells. It is abundant and has excellent photovoltaic attributes, however it is extremely susceptible to corrosion, even in the dark, resulting in the formation of an electrochemically passive oxide upon interaction with aqueous media. This work investigates the potential for conductive, inert and transparent boron doped diamond (BDD) coatings to protect p-type Silicon (p-Si). The stability and electrochemical performance of p-Si and p-Si|BDD were investigated using voltammetric techniques in 1 M H 2 SO 4 , before and after long-term exposure to the acidic medium (up to 280 hours) under no applied potential bias. Unprotected Si degraded very rapidly whilst BDD was shown to protect the underlying Si, as evident from I-V curves that indicated no increased resistance across the Si-diamond interface. Furthermore, BDD supported facile proton reduction at significantly lower onset potential for the hydrogen evolution reaction (up to -500 mV vs. SCE) compared with bare Si cathode (-850 mV vs. SCE). The activity of the BDD electrode/electrolyte interface was further improved by coating with platinum catalyst particles, to produce a p-Si|BDD|Pt strucure, which reduced the HER onset to nearly zero overpotential. Tafel analysis indicated that desirable electrochemical activity and stability were achieved for p-Si|BDD|Pt, making this a promising electrode for application in water splitting cells

Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

2011-01-01

Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition

International Nuclear Information System (INIS)

Nakazawa, Hideki; Kamata, Ryosuke; Miura, Soushi; Okuno, Saori

2013-01-01

We have investigated the influence of the duty ratio of pulsed substrate bias on the structure and properties of Si-doped diamond-like carbon (Si-DLC) films deposited by radio frequency plasma-enhanced chemical vapor deposition using CH 4 , Ar, and monomethylsilane (CH 3 SiH 3 ) as the Si source. The Si/(Si + C) ratios in the Si-DLC films deposited using pulsed bias were higher than that of the dc-biased Si-DLC film, and the Si fraction increased with decreasing pulse duty ratio. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy analyses revealed that Si-C, Si-H n , and C-H n bonds in the Si-DLC films increased with decreasing duty ratio. The internal stress decreased as the duty ratio decreased, which is probably due to the increase in Si-C, Si-H n , and C-H n bonds in the films. The Si-DLC films deposited using pulsed bias had higher adhesion strength than the dc-biased Si-DLC film because of the further reduction of internal stress. At higher duty ratios, although the Si fractions of the pulse-biased Si-DLC films were higher than that of the dc-biased Si-DLC film, the wear rates of the former were less than that of the latter. - Highlights: • The internal stress of Si-doped films was lowered at lower duty ratios. • The adhesion of pulse-biased films was improved compared with that of dc films. • The tribological properties of Si-doped films were improved by the use of pulse bias

Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

Science.gov (United States)

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

Electrochemical applications of CVD diamond

International Nuclear Information System (INIS)

Pastor-Moreno, Gustavo

2002-01-01

Diamond technology has claimed an important role in industry since non-expensive methods of synthesis such as chemical vapour deposition allow to elaborate cheap polycrystalline diamond. This fact has increased the interest in the scientific community due to the outstanding properties of diamond. Since Pleskov published in 1987 the first paper in electrochemistry, many researchers around the world have studied different aspects of diamond electrochemistry such as reactivity, electrical structure, etc. As part of this worldwide interest these studies reveal new information about diamond electrodes. These studies report investigation of diamond electrodes characterized using structural techniques like scanning electrode microscopy and Raman spectroscopy. A new electrochemical theory based on surface states is presented that explains the metal and the semiconductor behaviour in terms of the doping level of the diamond electrode. In an effort to characterise the properties of diamond electrodes the band edges for hydrogen and oxygen terminated surface are located in organic solvent, hence avoiding possible interference that are present in aqueous solution. The determination of the band edges is performed by Mott-Schottky studies. These allow the calculation of the flat band potential and therefore the band edges. Additional cyclic voltammetric studies are presented for both types of surface termination. Mott-Schottky data and cyclic voltammograms are compared and explained in terms of the band edge localisation. Non-degenerately p-type semiconductor behaviour is presented for hydrogen terminated boron doped diamond. Graphitic surface states on oxidised surface boron doped diamond are responsible for the electrochemistry of redox couples that posses similar energy. Using the simple redox couple 1,4-benzoquinone effect of surface termination on the chemical behaviour of diamond is presented. Hydrogen sublayers in diamond electrodes seem to play an important role for the

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

Energy Technology Data Exchange (ETDEWEB)

Dai, Wei, E-mail: popdw@126.com [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Jingmao; Geng, Dongsen [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Guo, Peng [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zheng, Jun [Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Qimin, E-mail: qmwang@gdut.edu.cn [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

2016-12-01

Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C{sub 2}H{sub 2} and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C{sub 2}H{sub 2} fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C{sub 2}H{sub 2} fraction. The results show that the Al and Cr contents in the films increased continuously as the C{sub 2}H{sub 2} fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would

Thin diamond films for tribological applications

International Nuclear Information System (INIS)

Wong, M.S.; Meilunas, R.; Ong, T.P.; Chang, R.P.H.

1989-01-01

Diamond films have been deposited on Si, Mo and many other substrates by microwave and radio frequency plasma enhanced chemical vapor deposition. Although the adhesion between the diamond film and most of the metal substrates is poor due to residual thermal stress from the mismatch of thermal expansion coefficients, the authors have developed processes to promote the growth of uniform and continuous diamond films with enhanced adhesion to metal substrates for tribological applications. The tribological properties of these films are measured using a ring-on-block tribotester. The coefficients of friction of diamond films sliding against a 52100 steel ring under the same experimental conditions are found to be significantly different depending on the morphology, grain size and roughness of the diamond films. However, under all cases tested, it is found that for uniform and continuous diamond films with small grain size of 1-3 micrometers, the coefficient of friction of the diamond film sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

Preparation of calcium-doped boron nitride by pulsed laser deposition

International Nuclear Information System (INIS)

Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

2012-01-01

Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca x BN y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al 2 O 3 (0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca 3 N 2 disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

2018-01-01

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi

2018-01-18

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

Science.gov (United States)

Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

2008-07-30

A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

Science.gov (United States)

Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

2018-05-01

Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

Science.gov (United States)

Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

2015-08-12

Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

Science.gov (United States)

Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

2014-02-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

Science.gov (United States)

Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

2015-03-01

Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements. Copyright © 2014 Elsevier B.V. All rights reserved.

Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

Directory of Open Access Journals (Sweden)

Vasile Ostafe

2008-07-01

Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide.

Science.gov (United States)

Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

2016-08-09

The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20-500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection.

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

International Nuclear Information System (INIS)

Čermák, Jan; Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

2014-01-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

Energy Technology Data Exchange (ETDEWEB)

Čermák, Jan, E-mail: cermakj@fzu.cz; Rezek, Bohuslav [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague 6 (Czech Republic); Koide, Yasuo [Sensor Materials Center, National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Takeuchi, Daisuke [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

2014-02-07

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Photoluminescence properties of boron doped InSe single crystals

International Nuclear Information System (INIS)

Ertap, H.; Bacıoğlu, A.; Karabulut, M.

2015-01-01

Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed