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Sample records for boron carbides

  1. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  2. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  3. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  4. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  5. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  6. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  7. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  8. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  9. High temperature thermoelectric properties of boron carbide

    International Nuclear Information System (INIS)

    Boron carbides are refractory solids with potential for application as very high temperature p-type thermoelectrics in power conversion applications. The thermoelectric properties of boron carbides are unconventional. In particular, the electrical conductivity is consistent with the thermally activated hopping of a high density (∼1021/cm3) of bipolarons; the Seebeck coefficient is anomalously large and increases with increasing temperature; and the thermal conductivity is surprisingly low. In this paper, these unusual properties and their relationship to the unusual structure and bonding present in boron carbides are reviewed. Finally, the potential for utilization of boron carbides at very high temperatures (up to 2200 degrees C) and for preparing n-type materials is discussed

  10. Synthesis and properties of low-carbon boron carbides

    International Nuclear Information System (INIS)

    This paper reports on the production of boron carbides of low carbon content (3 and CCl4 at 1273-1673 K in a chemical vapor deposition (CVD) reactor. Transmission electron microscopy (TEM) revealed that phase separation had occurred, and tetragonal boron carbide was formed along with β-boron or α-boron carbide under carbon-depleted gas-phase conditions. At temperatures greater than 1390 degrees C, graphite substrates served as a carbon source, affecting the phases present. A microstructure typical of CVD-produced α-boron carbide was observed. Plan view TEM of tetragonal boron carbide revealed a blocklike structure

  11. Rapid accurate isotopic measurements on boron in boric acid and boron carbide.

    Science.gov (United States)

    Duchateau, N L; Verbruggen, A; Hendrickx, F; De Bièvre, P

    1986-04-01

    A procedure is described whereby rapid and accurate isotopic measurements can be performed on boron in boric acid and boron carbide after fusion of these compounds with calcium carbonate. It allows the determination of the isotopic composition of boron in boric acid and boron carbide and the direct assay of boron or the (10)B isotope in boron carbide by isotope-dilution mass spectrometry.

  12. Boron carbide morphology changing under purification

    Science.gov (United States)

    Rahmatullin, I. A.; Sivkov, A. A.

    2015-10-01

    Boron carbide synthesized by using coaxial magnetoplasma accelerator with graphite electrodes was purified by two different ways. XRD-investigations showed content changing and respectively powder purification. Moreover TEM-investigations demonstrated morphology changing of product under purification that was discussed in the work.

  13. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  14. Probing Field Emission from Boron Carbide Nanowires

    Institute of Scientific and Technical Information of China (English)

    TIAN Ji-Fa; GAO Hong-Jun; BAO Li-Hong; WANG Xing-Jun; HUI Chao; LIU Fei; LI Chen; SHEN Cheng-Min; WANG Zong-Li; GU Chang-Zhi

    2008-01-01

    High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 106 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.

  15. Behavior of disordered boron carbide under stress.

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W; Chhowalla, Manish

    2006-07-21

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6 GPa approximately = P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2-3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  16. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  17. Testing Boron Carbide and Silicon Carbide under Triaxial Compression

    Science.gov (United States)

    Anderson, Charles; Chocron, Sidney; Nicholls, Arthur

    2011-06-01

    Boron Carbide (B4C) and silicon carbide (SiC-N) are extensively used as armor materials. The strength of these ceramics depends mainly on surface defects, hydrostatic pressure and strain rate. This article focuses on the pressure dependence and summarizes the characterization work conducted on intact and predamaged specimens by using compression under confinement in a pressure vessel and in a thick steel sleeve. The techniques used for the characterization will be described briefly. The failure curves obtained for the two materials will be presented, although the data are limited for SiC. The data will also be compared to experimental data from Wilkins (1969), and Meyer and Faber (1997). Additionally, the results will be compared with plate-impact data.

  18. Production process for boron carbide coated carbon material and boron carbide coated carbon material obtained by the production process

    International Nuclear Information System (INIS)

    A boron carbide coated carbon material is used for a plasma facing material of a thermonuclear reactor. The surface of a carbon material is chemically reacted with boron oxide to convert it into boron carbide. Then, it is subjected to heat treatment at a temperature of not lower than 1600degC in highly evacuated or inactive atmosphere to attain a boron carbide coated carbon material. The carbon material used is an artificial graphite or a carbon fiber reinforced carbon composite material. In the heat treatment, when the atmosphere is in vacuum, it is highly evacuated to less than 10Pa. Alternatively, in a case of inactive atmosphere, argon or helium gas each having oxygen and nitrogen content of not more than 20ppm is used. With such procedures, there can be obtained a boron carbide-coated carbon material with low content of oxygen and nitrogen impurities contained in the boron carbide coating membrane thereby hardly releasing gases. (I.N.)

  19. Synthesis and photoluminescence property of boron carbide nanowires

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B2O3/C powder precursors under an argon flow at 1100~C. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm.

  20. Computational Studies of Physical Properties of Boron Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  1. Dispersion of boron carbide in a tungsten carbide/cobalt matrix

    International Nuclear Information System (INIS)

    Particles of boron carbide (105-125 microns) were coated with a layer (10-12 microns) of titanium carbide in a fluidized bed. These coated particles have been successfully incorporated in a tungsten carbide--cobalt matrix by hot pressing at 1 tonf/in2, (15.44 MN/m2) at 13500C. Attempts to produce a similar material by a cold pressing and sintering technique were unsuccessful because of penetration of the titanium carbide layer by liquid cobalt. Hot-pressed material containing boron carbide had a static strength in bend of approximately 175,000 lbf/in2, (1206MN/m2) which compares favorably with the strength of conventionally produced tungsten carbide/cobalt. The impact strength of the material containing boron carbide was however considerably lower than tungsten carbide/cobalt. In rock drilling tests on Darley Dale sandstone at low speeds and low loads, the material containing boron carbide drilled almost ten times as far without seizure as tungsten carbide/cobalt. In higher speed and higher load rotary drilling tests conducted by the National Coal Board, the material containing boron carbide chipped badly compared with normal NCB hardgrade material

  2. Design, Fabrication and Performance of Boron-Carbide Control Elements

    International Nuclear Information System (INIS)

    A control blade design, incorporating boron-carbide (B4C) in stainless-steel tubes, was introduced into service in boiling water reactors in April 1961. Since that time this blade has become the standard reference control element in General Electric boiling-water reactors, replacing the 2% boron-stainless-steel blades previously used. The blades consist of a sheathed, cruciform array of small vertical stainless-steel tubes filled with compácted boron-carbide powder. The boron-carbide powder is confined longitudinally into several independent compartments by swaging over ball bearings located inside the tubes. The development and use of boron-carbide control rods is discussed in five phases: 1. Summary of experience with boron-steel blades and reasons for transition to boron-carbide control; 2. Design of the boron-carbide blade, beginning with developmental experiments, including early measurements performed in the AEC ''Control Rod Material and Development Program'' at the Vallecitos Atomic Laboratory, through a description of the final control blade configuration; 3. Fabrication of the blades and quality control procedures; 4. Results of confirmatory pre-operational mechanical and reactivity testing; and 5. Post-operational experience with the blades, including information on the results of mechanical inspection and reactivity testing after two years of reactor service. (author)

  3. Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

    International Nuclear Information System (INIS)

    Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm-3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects

  4. Microstructure and Properties of Plasma Spraying Boron Carbide Coating

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Microstructure of plasma spray boron carbide coating was studied by SEM and TEM. Its physical,mechanical and electrical properties were measured. The results showed that high microhardness,modulus and Iow porosity of B4C coating were manufactured by plasma spray. It was lamellar packing and dense. The B4C coating examined here contained two principal structures and two impurity phase besides major phase. The relatively small value of Young′s modulus, comparing with that of the bulk materials, is explained by porosity. The Fe impurity phase could account for the relatively high electrical conductivity of boron carbide coating by comparing with the general boron carbide materials.

  5. Hugoniot equation of state and dynamic strength of boron carbide

    Science.gov (United States)

    Grady, Dennis E.

    2015-04-01

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20-60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable mechanistic

  6. Hugoniot equation of state and dynamic strength of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, Dennis E. [Applied Research Associates, Southwest Division, 4300 San Mateo Blvd NE, A-220, Albuquerque, New Mexico 87110-129 (United States)

    2015-04-28

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  7. An investigation on gamma attenuation behaviour of titanium diboride reinforced boron carbide-silicon carbide composites

    Science.gov (United States)

    Buyuk, Bulent; Beril Tugrul, A.

    2014-04-01

    In this study, titanium diboride (TiB2) reinforced boron carbide-silicon carbide composites were investigated against Cs-137 and Co-60 gamma radioisotope sources. The composite materials include 70% boron carbide (B4C) and 30% silicon carbide (SiC) by volume. Titanium diboride was reinforced to boron carbide-silicon carbide composites as additive 2% and 4% by volume. Average particle sizes were 3.851 µm and 170 nm for titanium diboride which were reinforced to the boron carbide silicon carbide composites. In the experiments the gamma transmission technique was used to investigate the gamma attenuation properties of the composite materials. Linear and mass attenuation coefficients of the samples were determined. Theoretical mass attenuation coefficients were calculated from XCOM computer code. The experimental results and theoretical results were compared and evaluated with each other. It could be said that increasing the titanium diboride ratio causes higher linear attenuation values against Cs-137 and Co-60 gamma radioisotope sources. In addition decreasing the titanium diboride particle size also increases the linear and mass attenuation properties of the titanium diboride reinforced boron carbide-silicon carbide composites.

  8. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  9. Radial furnace shows promise for growing straight boron carbide whiskers

    Science.gov (United States)

    Feingold, E.

    1967-01-01

    Radial furnace, with a long graphite vaporization tube, maintains a uniform thermal gradient, favoring the growth of straight boron carbide whiskers. This concept seems to offer potential for both the quality and yield of whiskers.

  10. On surface Raman scattering and luminescence radiation in boron carbide.

    Science.gov (United States)

    Werheit, H; Filipov, V; Schwarz, U; Armbrüster, M; Leithe-Jasper, A; Tanaka, T; Shalamberidze, S O

    2010-02-01

    The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.

  11. Analytical chemistry methods for boron carbide absorber material. [Standard

    Energy Technology Data Exchange (ETDEWEB)

    DELVIN WL

    1977-07-01

    This standard provides analytical chemistry methods for the analysis of boron carbide powder and pellets for the following: total C and B, B isotopic composition, soluble C and B, fluoride, chloride, metallic impurities, gas content, water, nitrogen, and oxygen. (DLC)

  12. Analysis of boron carbides' electronic structure

    Science.gov (United States)

    Howard, Iris A.; Beckel, Charles L.

    1986-01-01

    The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

  13. Dynamic compaction of boron carbide by a shock wave

    Science.gov (United States)

    Buzyurkin, Andrey E.; Kraus, Eugeny I.; Lukyanov, Yaroslav L.

    2016-10-01

    This paper presents experiments on explosive compaction of boron carbide powder and modeling of the stress state behind the shock front at shock loading. The aim of this study was to obtain a durable low-porosity compact sample. The explosive compaction technology is used in this problem because the boron carbide is an extremely hard and refractory material. Therefore, its compaction by traditional methods requires special equipment and considerable expenses.

  14. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  15. Isotopic effects on the phonon modes in boron carbide.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U; Rotter, H W; Shalamberidze, S O

    2010-10-01

    The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals.

  16. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.

  17. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 3000C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 10500C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  18. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  19. Boron carbide coating deposition on tungsten substrates from atomic fluxes of boron and carbon

    Science.gov (United States)

    Sadovskiy, Y.; Begrambekov, L.; Ayrapetov, A.; Gretskaya, I.; Grunin, A.; Dyachenko, M.; Puntakov, N.

    2016-09-01

    A device used for both coating deposition and material testing is presented in the paper. By using lock chambers, sputtering targets are easily exchanged with sample holder thus allowing testing of deposited samples with high power density electron or ion beams. Boron carbide coatings were deposited on tungsten samples. Methods of increasing coating adhesion are described in the paper. 2 μm boron carbide coatings sustained 450 heating cycles from 100 to 900 C. Ion beam tests have shown satisfactory results.

  20. Characterization of a boron carbide-based polymer neutron sensor

    Science.gov (United States)

    Tan, Chuting; James, Robinson; Dong, Bin; Driver, M. Sky; Kelber, Jeffry A.; Downing, Greg; Cao, Lei R.

    2015-12-01

    Boron is used widely in thin-film solid-state devices for neutron detection. The film thickness and boron concentration are important parameters that relate to a device's detection efficiency and capacitance. Neutron depth profiling was used to determine the film thicknesses and boron-concentration profiles of boron carbide-based polymers grown by plasma enhanced chemical vapor deposition (PECVD) of ortho-carborane (1,2-B10C2H12), resulting in a pure boron carbide film, or of meta-carborane (1,7-B10C2H12) and pyridine (C5H5N), resulting in a pyridine composite film, or of pyrimidine (C4H4N2) resulting in a pure pyrimidine film. The pure boron carbide film had a uniform surface appearance and a constant thickness of 250 nm, whereas the thickness of the composite film was 250-350 nm, measured at three different locations. In the meta-carborane and pyridine composite film the boron concentration was found to increase with depth, which correlated with X-ray photoelectron spectroscopy (XPS)-derived atomic ratios. A proton peak from 14N (n,p)14C reaction was observed in the pure pyrimidine film, indicating an additional neutron sensitivity to nonthermal neutrons from the N atoms in the pyrimidine.

  1. Shock-induced localized amorphization in boron carbide.

    Science.gov (United States)

    Chen, Mingwei; McCauley, James W; Hemker, Kevin J

    2003-03-01

    High-resolution electron microscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragranular amorphous bands that occur parallel to specific crystallographic planes and contiguously with apparent cleaved fracture surfaces. This damage mechanism explains the measured, but not previously understood, decrease in the ballistic performance of boron carbide at high impact rates and pressures. The formation of these amorphous bands is also an example of how shock loading can result in the synthesis of novel structures and materials with substantially altered properties.

  2. Functionalization and cellular uptake of boron carbide nanoparticles

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Björkdahl, O.; Sørensen, P. G.;

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant...... melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded...

  3. Disorder and defects are not intrinsic to boron carbide

    OpenAIRE

    Swastik Mondal; Elena Bykova; Somnath Dey; Sk. Imran Ali; Natalia Dubrovinskaia; Leonid Dubrovinsky; Gleb Parakhonskiy; Sander van Smaalen

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichio...

  4. Raman spectroscopic characterization of the core-rim structure in reaction bonded boron carbide ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jannotti, Phillip; Subhash, Ghatu, E-mail: subhash@ufl.edu [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zheng, James Q.; Halls, Virginia [Program Executive Office—Soldier Protection and Individual Equipment, US Army, Fort Belvoir, Virginia 22060 (United States); Karandikar, Prashant G.; Salamone, S.; Aghajanian, Michael K. [M-Cubed Technologies, Inc., Newark, Delaware 19711 (United States)

    2015-01-26

    Raman spectroscopy was used to characterize the microstructure of reaction bonded boron carbide ceramics. Compositional and structural gradation in the silicon-doped boron carbide phase (rim), which develops around the parent boron carbide region (core) due to the reaction between silicon and boron carbide, was evaluated using changes in Raman peak position and intensity. Peak shifting and intensity variation from the core to the rim region was attributed to changes in the boron carbide crystal structure based on experimental Raman observations and ab initio calculations reported in literature. The results were consistent with compositional analysis determined by energy dispersive spectroscopy. The Raman analysis revealed the substitution of silicon atoms first into the linear 3-atom chain, and then into icosahedral units of the boron carbide structure. Thus, micro-Raman spectroscopy provided a non-destructive means of identifying the preferential positions of Si atoms in the boron carbide lattice.

  5. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    Science.gov (United States)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  6. Dynamic strength of reaction-sintered boron carbide ceramic

    Science.gov (United States)

    Savinykh, A. S.; Garkushin, G. V.; Razorenov, S. V.; Rumyantsev, V. I.

    2015-06-01

    The shock compression wave profiles in three modifications of boron carbide ceramic are studied in the compressive stress range 3-19 GPa. The Hugoniot elastic limit and the spall strength of the materials are determined. It is confirmed that the spall strength of high-hardness ceramic changes nonmonotonically with the compressive stress in a shock wave.

  7. Standard specification for nuclear-Grade boron carbide pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2007-01-01

    1.1 This specification applies to boron carbide pellets for use as a control material in nuclear reactors. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

  8. Modification of optical surfaces employing CVD boron carbide coatings

    International Nuclear Information System (INIS)

    Non-reflective or high emissivity optical surfaces require materials with given roughness or surface characteristics wherein interaction with incident radiation results in the absorption and dissipation of a specific spectrum of radiation. Coatings have been used to alter optical properties, however, extreme service environments, such as experienced by satellite systems and other spacecraft, necessitate the use of materials with unique combinations of physical, chemical, and mechanical properties. Thus, ceramics such as boron carbide are leading candidates for these applications. Boron carbide was examined as a coating for optical baffle surfaces. Boron carbide coatings were deposited on graphite substrates from BCl3, CH4, and H2 gases employing chemical vapor deposition (CVD) techniques. Parameters including temperature, reactant gas compositions and flows, and pressure were explored. The structures of the coatings were characterized using electron microscopy and compositions were determined using x-ray diffraction. The optical properties of the boron carbide coatings were measured, and relationships between processing conditions, deposit morphology, and optical properties were determined

  9. Disorder and defects are not intrinsic to boron carbide

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure–high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C–B–C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  10. Disorder and defects are not intrinsic to boron carbide.

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials. PMID:26777140

  11. Disorder and defects are not intrinsic to boron carbide.

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-18

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  12. Atomic-Level Understanding of "Asymmetric Twins" in Boron Carbide

    Science.gov (United States)

    Xie, Kelvin Y.; An, Qi; Toksoy, M. Fatih; McCauley, James W.; Haber, Richard A.; Goddard, William A.; Hemker, Kevin J.

    2015-10-01

    Recent observations of planar defects in boron carbide have been shown to deviate from perfect mirror symmetry and are referred to as "asymmetric twins." Here, we demonstrate that these asymmetric twins are really phase boundaries that form in stoichiometric B4C (i.e., B12C3 ) but not in B13C2 . TEM observations and ab initio simulations have been coupled to show that these planar defects result from an interplay of stoichiometry, atomic positioning, icosahedral twinning, and structural hierarchy. The composition of icosahedra in B4C is B11C and translation of the carbon atom from a polar to equatorial site leads to a shift in bonding and a slight distortion of the lattice. No such distortion is observed in boron-rich B13C2 because the icosahedra do not contain carbon. Implications for tailoring boron carbide with stoichiometry and extrapolations to other hierarchical crystalline materials are discussed.

  13. Carbon-rich icosahedral boron carbide designed from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Jay, Antoine; Vast, Nathalie; Sjakste, Jelena; Duparc, Olivier Hardouin [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA-DSM-IRAMIS, CNRS UMR 7642, F-91120 Palaiseau (France)

    2014-07-21

    The carbon-rich boron-carbide (B{sub 11}C)C-C has been designed from first principles within the density functional theory. With respect to the most common boron carbide at 20% carbon concentration B{sub 4}C, the structural modification consists in removing boron atoms from the chains linking (B{sub 11}C) icosahedra. With C-C instead of C-B-C chains, the formation of vacancies is shown to be hindered, leading to enhanced mechanical strength with respect to B{sub 4}C. The phonon frequencies and elastic constants turn out to prove the stability of the carbon-rich phase, and important fingerprints for its characterization have been identified.

  14. The local structure of transition metal doped semiconducting boron carbides

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jing; Dowben, P A [Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Behlen Laboratory of Physics, University of Nebraska-Lincoln, PO Box 880111, Lincoln, NE 68588-0111 (United States); Luo Guangfu; Mei Waining [Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266 (United States); Kizilkaya, Orhan [J. Bennett Johnston Sr. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Hwy., Baton Rouge LA 70806 (United States); Shepherd, Eric D; Brand, J I [College of Engineering, and the Nebraska Center for Materials and Nanoscience, N209 Walter Scott Engineering Center, 17th and Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

    2010-03-03

    Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C{sub 2}B{sub 10}H{sub 12}) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all the 3d transition metal doped boron carbides, Ti through Cu, are compared using cluster and/or icosahedral chain calculations, where the latter have periodic boundary conditions.

  15. Atomic-Level Understanding of "Asymmetric Twins" in Boron Carbide.

    Science.gov (United States)

    Xie, Kelvin Y; An, Qi; Toksoy, M Fatih; McCauley, James W; Haber, Richard A; Goddard, William A; Hemker, Kevin J

    2015-10-23

    Recent observations of planar defects in boron carbide have been shown to deviate from perfect mirror symmetry and are referred to as "asymmetric twins." Here, we demonstrate that these asymmetric twins are really phase boundaries that form in stoichiometric B(4)C (i.e., B(12)C(3)) but not in B(13)C(2). TEM observations and ab initio simulations have been coupled to show that these planar defects result from an interplay of stoichiometry, atomic positioning, icosahedral twinning, and structural hierarchy. The composition of icosahedra in B(4)C is B(11)C and translation of the carbon atom from a polar to equatorial site leads to a shift in bonding and a slight distortion of the lattice. No such distortion is observed in boron-rich B(13)C(2) because the icosahedra do not contain carbon. Implications for tailoring boron carbide with stoichiometry and extrapolations to other hierarchical crystalline materials are discussed.

  16. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2010-01-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  17. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst. PMID:18961131

  18. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst.

  19. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  20. Electric Heating Property from Butyl Rubber-Loaded Boron Carbide Composites

    Institute of Scientific and Technical Information of China (English)

    MENG Dechuan; WANG Ninghui; LI Guofeng

    2014-01-01

    We researched the electric heating property from butyl rubber-loaded boron carbide composite. The effects of boron carbide content on bulk resistivity, voltage-current characteristic, thermal conductivity and thermal stability of boron carbide/butyl rubber (IIR) polymer composite were introduced. The analysis results indicated that the bulk resistivity decreased greatly with increasing boron carbide content, and when boron carbide content reached to 60%, the bulk resistivity achieved the minimum. Accordingly, electric heating behavior of the composite is strongly dependent on boron carbide content as well as applied voltage. The content of boron carbide was found to be effective in achieving high thermal conductivity in composite systems. The thermal conductivity of the composite material with added boron carbide was improved nearly 20 times than that of the pure IIR. The thermal stability test showed that, compared with pure IIR, the thermal stable time of composites was markedly extended, which indicated that the boron carbide can significantly improve the thermal stability of boron carbide/IIR composite.

  1. Predicted boron-carbide compounds: a first-principles study.

    Science.gov (United States)

    Wang, De Yu; Yan, Qian; Wang, Bing; Wang, Yuan Xu; Yang, Jueming; Yang, Gui

    2014-06-14

    By using developed particle swarm optimization algorithm on crystal structural prediction, we have explored the possible crystal structures of B-C system. Their structures, stability, elastic properties, electronic structure, and chemical bonding have been investigated by first-principles calculations with density functional theory. The results show that all the predicted structures are mechanically and dynamically stable. An analysis of calculated enthalpy with pressure indicates that increasing of boron content will increase the stability of boron carbides under low pressure. Moreover, the boron carbides with rich carbon content become more stable under high pressure. The negative formation energy of predicted B5C indicates its high stability. The density of states of B5C show that it is p-type semiconducting. The calculated theoretical Vickers hardnesses of B-C exceed 40 GPa except B4C, BC, and BC4, indicating they are potential superhard materials. An analysis of Debye temperature and electronic localization function provides further understanding chemical and physical properties of boron carbide.

  2. Predicted boron-carbide compounds: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Wang, De Yu; Yan, Qian; Wang, Bing; Wang, Yuan Xu, E-mail: wangyx@henu.edu.cn; Yang, Jueming; Yang, Gui [Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

    2014-06-14

    By using developed particle swarm optimization algorithm on crystal structural prediction, we have explored the possible crystal structures of B-C system. Their structures, stability, elastic properties, electronic structure, and chemical bonding have been investigated by first-principles calculations with density functional theory. The results show that all the predicted structures are mechanically and dynamically stable. An analysis of calculated enthalpy with pressure indicates that increasing of boron content will increase the stability of boron carbides under low pressure. Moreover, the boron carbides with rich carbon content become more stable under high pressure. The negative formation energy of predicted B{sub 5}C indicates its high stability. The density of states of B{sub 5}C show that it is p-type semiconducting. The calculated theoretical Vickers hardnesses of B-C exceed 40 GPa except B{sub 4}C, BC, and BC{sub 4}, indicating they are potential superhard materials. An analysis of Debye temperature and electronic localization function provides further understanding chemical and physical properties of boron carbide.

  3. Hydrogen storage in pillared Li-dispersed boron carbide nanotubes

    OpenAIRE

    Wu, Xiaojun; Gao, Yi; Zeng, Xiao Cheng

    2007-01-01

    Ab initio density-functional theory study suggests that pillared Li-dispersed boron carbide nanotubes is capable of storing hydrogen with a mass density higher than 6.0 weight% and a volumetric density higher than 45 g/L. The boron substitution in carbon nanotube greatly enhances the binding energy of Li atom to the nanotube, and this binding energy (~ 2.7 eV) is greater than the cohesive energy of lithium metal (~1.7 eV), preventing lithium from aggregation (or segregation) at high lithium d...

  4. Boron carbide (B4C) coating. Deposition and testing

    Science.gov (United States)

    Azizov, E.; Barsuk, V.; Begrambekov, L.; Buzhinsky, O.; Evsin, A.; Gordeev, A.; Grunin, A.; Klimov, N.; Kurnaev, V.; Mazul, I.; Otroshchenko, V.; Putric, A.; Sadovskiy, Ya.; Shigin, P.; Vergazov, S.; Zakharov, A.

    2015-08-01

    Boron carbide was proposed as a material of in-situ protecting coating for tungsten tiles of ITER divertor. To prove this concept the project including investigation of regimes of plasma deposition of B4C coating on tungsten and tests of boron carbide layer in ITER-like is started recently. The paper contends the first results of the project. The results of B4C coating irradiation by the plasma pulses of QSPU-T plasma accelerator are presented. The new device capable of B4C film deposition on tungsten and testing of the films and materials with ITER-like heat loads and ion- and electron irradiation is described. The results of B4C coating deposition and testing of both tungsten substrate and coating are shown and discussed.

  5. Single crystalline boron carbide nanobelts:synthesis and characterization

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    This paper reports that the large-scale single crystalline boron carbide nanobelts have been fabricated through a simple carbothermal reduction method with B/B203/C/Fe powder as precursors at ll00~C.Transmission electron microscopy and selected area electron diffraction characterizations show that the boron carbide nanobelt has a B4C rhomb-centred hexagonal structure with good crystallization.Electron energy loss spectroscopy analysis indicates that the nanobelt contains only B and C,and the atomic ratio of B to C is close to 4:1.High resolution transmission electron microscopy results show that the preferential growth direction of the nanobelt is [101].A possible growth mechanism is also discussed.

  6. Final design review of boron carbide safety rod

    International Nuclear Information System (INIS)

    The object of this paper discusses the design review of the boron carbide safety rod for the Westinghouse Savannah River Company. This paper reviewed information presented by personnel of the Savannah River Laboratory (SRL) Equipment Engineering Section, SRL Materials Technology Section and Reactor Materials Engineering and Technology. From this report, views, opinions and recommendations were made on the safety rod from materials testing to production

  7. Promotion of the Growth of Boron-Carbide Nanowires

    Science.gov (United States)

    Kranov, Yanko; Zhang, Daqing; McIlroy, David; Norton, Grant

    2000-03-01

    Boron carbide, is a wide bandgap semiconductor (2.1eV) with a high melting temperature in excess of 2400^circC. Initial studies indicate that nanowires of boron carbide approximately 25 ~30 μm in length and less than 100 nm in diameter can be grown by the technique of plasma enhanced chemical vapor deposition by a mode of the vapor-liquid-solid mechanism [1] at relatively low temperatures ( ~1150^circC). Through the use of boron based eutectics such as FeB, NiB and PtB nanowire growth at temperatures below 1150^circC. These metal borides have successively lower melting temperatures, respectively. In this paper we will discuss a simple technique for making submicron metal boride particles, as well as a simple means of depositing them onto a surface. In addition, the effect of droplet size on nanowire diameter and the stability of the size of the metal boride droplet during growth will be discussed. These studies demonstrate that the surface can be selectively seeded thereby controlling the location of the nanowires, i.e. select area deposition. Lastly, the techniques and materials used to grow boron carbide nanowires can easily be used to grow other types of nanowires, as well as carbon nanotubes. [1]. D. N. McIlroy, Daqing Zhang, Robert M. Cohen, J. Wharton, Yongjun Geng, M. Grant Norton, G. De Stasio, B.Gilbert, L.Perfetti, J.H.Streiff, B.Broocks and J.L. McHale, Phys. Rev. B 60 (1999) 4874

  8. Sintering of nano crystalline silicon carbide by doping with boron carbide

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-06-01

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050°C at vacuum (3 mbar) for 15 min. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid-state sintering process. Polytype transformation from 6H to 4H was observed.

  9. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    Science.gov (United States)

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  10. Depressurization amorphization of single-crystal boron carbide.

    Science.gov (United States)

    Yan, X Q; Tang, Z; Zhang, L; Guo, J J; Jin, C Q; Zhang, Y; Goto, T; McCauley, J W; Chen, M W

    2009-02-20

    We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressurization amorphization results from pressure-induced irreversible bending of C-B-C atomic chains cross-linking 12 atom icosahedra at the rhombohedral vertices.

  11. Structural phase transitions in boron carbide under stress

    Science.gov (United States)

    Korotaev, P.; Pokatashkin, P.; Yanilkin, A.

    2016-01-01

    Structural transitions in boron carbide B4C under stress were studied by means of first-principles molecular dynamics in the framework of density functional theory. The behavior depends strongly on degree of non-hydrostatic stress. Under hydrostatic stress continuous bending of the three-atom C-B-C chain was observed up to 70 GPa. The presence of non-hydrostatic stress activates abrupt reversible chain bending, which is displacement of the central boron atom in the chain with the formation of weak bonds between this atom and atoms in the nearby icosahedra. Such structural change can describe a possible reversible phase transition in dynamical loading experiments. High non-hydrostatic stress achieved in uniaxial loading leads to disordering of the initial structure. The formation of carbon chains is observed as one possible transition route.

  12. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  13. Frequency mixing in boron carbide laser ablation plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Oujja, M.; Benítez-Cañete, A.; Sanz, M.; Lopez-Quintas, I.; Martín, M.; Nalda, R. de, E-mail: r.nalda@iqfr.csic.es; Castillejo, M.

    2015-05-01

    Graphical abstract: - Highlights: • Two-color frequency mixing has been studied in a laser ablation boron carbide plasma. • A space- and time-resolved study mapped the nonlinear optical species in the plasma. • The nonlinear process maximizes when charge recombination is expected to be completed. • Neutral atoms and small molecules are the main nonlinear species in this medium. • Evidence points to six-wave mixing as the most likely process. - Abstract: Nonlinear frequency mixing induced by a bichromatic field (1064 nm + 532 nm obtained from a Q-switched Nd:YAG laser) in a boron carbide (B{sub 4}C) plasma generated through laser ablation under vacuum is explored. A UV beam at the frequency of the fourth harmonic of the fundamental frequency (266 nm) was generated. The dependence of the efficiency of the process as function of the intensities of the driving lasers differs from the expected behavior for four-wave mixing, and point toward a six-wave mixing process. The frequency mixing process was strongly favored for parallel polarizations of the two driving beams. Through spatiotemporal mapping, the conditions for maximum efficiency were found for a significant delay from the ablation event (200 ns), when the medium is expected to be a low-ionized plasma. No late components of the harmonic signal were detected, indicating a largely atomized medium.

  14. Electron microscopy study of radiation effects in boron carbide

    International Nuclear Information System (INIS)

    Boron carbide is a disordered non-stoechiometric material with a strongly microtwinned polycristallyne microstructure. This ceramic is among the candidate materials for the first wall coating in fusion reactor and is used as a neutron absorber in the control rods of fast breeder reactors. The present work deals with the nature of radiation damage in this solid. Because of helium internal production, neutron irradiated boron carbide is affected by swelling and by a strong microcracking which can break up a pellet in fine powder. These processes are rather intensitive to the irradiation parameters (temperature, flux and even neutron spectrum). Transmission electron microscopy of samples irradiated by the fast neutrons of a reactor, the electrons of a high voltage electron microscope and of samples implanted with helium ions was used to understand the respective roles of helium and point defects in the processes of swelling and microcracking. The design of an irradiation chamber for helium implantation at controlled temperature from 600 to 17000C was an important technical part of this work

  15. Boron carbide neutron screen for GRR-1 neutron spectrum tailoring

    International Nuclear Information System (INIS)

    The presence of fast neutron spectra in new reactor concepts (such as Gas Cooled Fast Reactor, new generation Sodium Cooled Fast Reactor, Lead Fast Reactor, Accelerator Driven System and nuclear Fusion Reactors) is expected to induce a strong impact on the contained materials, including structural materials (e.g. steels), nuclear fuels, neutron reflecting materials (e.g. beryllium) and tritium breeding materials (for fusion reactors). Therefore, effective operation of these reactors will require extensive testing of their components, which must be performed under neutronic conditions representative of those expected to prevail inside the reactor cores when in operation. Depending on the material, the requirements of a test irradiation can vary. In this work preliminary studies were performed to observe the behavior of the neutron spectrum within a boron carbide neutron screen inserted in a hypothetical reflector test hole of the Greek Research Reactor. Four different screen configurations were simulated with Monte Carlo code TRIPOLI-4. The obtained data showed that the insertion of boron carbide caused not only elimination of the thermal (E < 1 eV) component of the neutron energy spectrum but also absorption of a considerable proportion of the intermediate energy neutrons (1x10-6 MeV < E < 1 MeV). (author)

  16. Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties

    Science.gov (United States)

    Echeverria, Elena; Dong, Bin; Peterson, George; Silva, Joseph P.; Wilson, Ethiyal R.; Sky Driver, M.; Jun, Young-Si; Stucky, Galen D.; Knight, Sean; Hofmann, Tino; Han, Zhong-Kang; Shao, Nan; Gao, Yi; Mei, Wai-Ning; Nastasi, Michael; Dowben, Peter A.; Kelber, Jeffry A.

    2016-09-01

    The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios ~3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV-2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of ~350 µs compared to values of  ⩽35 µs for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of ~0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron-hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.

  17. Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires

    Science.gov (United States)

    Yu, Zhiyang; Luo, Jian; Shi, Baiou; Zhao, Jiong; Harmer, Martin P.; Zhu, Jing

    2015-11-01

    Aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) was employed to study the distribution of barium atoms on the surfaces and in the interiors of boron carbide based nanowires. Barium based dopants, which were used to control the crystal growth, adsorbed to the surfaces of the boron-rich crystals in the form of nanometer-thick surficial films (a type of surface complexion). During the crystal growth, these dopant-based surface complexions became embedded inside the single crystalline segments of fivefold boron-rich nanowires collectively, where they were converted to more ordered monolayer and bilayer modified complexions. Another form of bilayer complexion stabilized at stacking faults has also been identified. Numerous previous works suggested that dopants/impurities tended to segregate at the stacking faults or twinned boundaries. In contrast, our study revealed the previously-unrecognized possibility of incorporating dopants and impurities inside an otherwise perfect crystal without the association to any twin boundary or stacking fault. Moreover, we revealed the amount of barium dopants incorporated was non-equilibrium and far beyond the bulk solubility, which might lead to unique properties.

  18. Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires.

    Science.gov (United States)

    Yu, Zhiyang; Luo, Jian; Shi, Baiou; Zhao, Jiong; Harmer, Martin P; Zhu, Jing

    2015-11-26

    Aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) was employed to study the distribution of barium atoms on the surfaces and in the interiors of boron carbide based nanowires. Barium based dopants, which were used to control the crystal growth, adsorbed to the surfaces of the boron-rich crystals in the form of nanometer-thick surficial films (a type of surface complexion). During the crystal growth, these dopant-based surface complexions became embedded inside the single crystalline segments of fivefold boron-rich nanowires collectively, where they were converted to more ordered monolayer and bilayer modified complexions. Another form of bilayer complexion stabilized at stacking faults has also been identified. Numerous previous works suggested that dopants/impurities tended to segregate at the stacking faults or twinned boundaries. In contrast, our study revealed the previously-unrecognized possibility of incorporating dopants and impurities inside an otherwise perfect crystal without the association to any twin boundary or stacking fault. Moreover, we revealed the amount of barium dopants incorporated was non-equilibrium and far beyond the bulk solubility, which might lead to unique properties.

  19. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Sørensen, P. G.; Björkdahl, O.;

    2006-01-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using...

  20. Effect of boron carbide on primary crystallization of chromium cast iron

    Directory of Open Access Journals (Sweden)

    A. Studnicki

    2008-04-01

    Full Text Available In the paper results of the influence of boron carbide (B4C as inoculant of abrasion-resisting chromium cast iron (about 2,8% carbon and 18% chromium on primary crystallization researches are presented. Boron carbide dispersion was introduced at the bottom of pouring ladle before tap of liquid cast iron. In this investigations were used three different quantities of inoculant in amounts 0,1%; 0,2% and 0,3% with relation to bath weight. It has been demonstrated that such small additions of boron carbide change primary crystallization parameters, particularly temperature characteristic of process, their time and kinetics.

  1. Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

    Science.gov (United States)

    Ponomarev, V. I.; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I.

    2015-09-01

    Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide В15- х С х , (1.5 ≤ x ≤ 3) and its magnesium derivative C4B25Mg1.42. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from В12.9С2.1 to В12.4С2.6.

  2. Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility.

    Science.gov (United States)

    An, Qi; Goddard, William A

    2014-12-01

    Boron carbide (B4C) is a hard material whose value for extended engineering applications such as body armor; is limited by its brittleness under impact. To improve the ductility while retaining hardness, we used density functional theory to examine modifying B4C ductility through microalloying. We found that replacing the CBC chain in B4C with Si-Si, denoted as (B11Cp)-Si2, dramatically improves the ductility, allowing a continuous shear to a large strain of 0.802 (about twice of B4C failure strain) without brittle failure. Moreover, (B11C)-Si2 retains low density and high hardness. This ductility improvement arises because the Si-Si linkages enable the icosahedra accommodate additional shear by rotating instead of breaking bonds.

  3. Dynamical conductivity of boron carbide: heavily damped plasma vibrations.

    Science.gov (United States)

    Werheit, Helmut; Gerlach, Guido

    2014-10-22

    The FIR reflectivity spectra of boron carbide, measured down to ω~10 cm(-1) between 100 and 800 K, are essentially determined by heavily damped plasma vibrations. The spectra are fitted applying the classical Drude-Lorentz theory of free carriers. The fitting Parameter Π=ωp/ωτ yields the carrier densities, which are immediately correlated with the concentration of structural defects in the homogeneity range. This correlation is proved for band-type and hopping conductivity. The effective mass of free holes in the valence band is estimated at m*/me~2.5. The mean free path of the free holes has the order of the cell parameters.

  4. Frequency mixing in boron carbide laser ablation plasmas

    Science.gov (United States)

    Oujja, M.; Benítez-Cañete, A.; Sanz, M.; Lopez-Quintas, I.; Martín, M.; de Nalda, R.; Castillejo, M.

    2015-05-01

    Nonlinear frequency mixing induced by a bichromatic field (1064 nm + 532 nm obtained from a Q-switched Nd:YAG laser) in a boron carbide (B4C) plasma generated through laser ablation under vacuum is explored. A UV beam at the frequency of the fourth harmonic of the fundamental frequency (266 nm) was generated. The dependence of the efficiency of the process as function of the intensities of the driving lasers differs from the expected behavior for four-wave mixing, and point toward a six-wave mixing process. The frequency mixing process was strongly favored for parallel polarizations of the two driving beams. Through spatiotemporal mapping, the conditions for maximum efficiency were found for a significant delay from the ablation event (200 ns), when the medium is expected to be a low-ionized plasma. No late components of the harmonic signal were detected, indicating a largely atomized medium.

  5. The effects of stoichiometry on the mechanical properties of icosahedral boron carbide under loading.

    Science.gov (United States)

    Taylor, DeCarlos E; McCauley, James W; Wright, T W

    2012-12-19

    The effects of stoichiometry on the atomic structure and the related mechanical properties of boron carbide (B(4)C) have been studied using density functional theory and quantum molecular dynamics simulations. Computational cells of boron carbide containing up to 960 atoms and spanning compositions ranging from 6.7% to 26.7% carbon were used to determine the effects of stoichiometry on the atomic structure, elastic properties, and stress-strain response as a function of hydrostatic, uniaxial, and shear loading paths. It was found that different stoichiometries, as well as variable atomic arrangements within a fixed stoichiometry, can have a significant impact on the yield stress of boron carbide when compressed uniaxially (by as much as 70% in some cases); the significantly reduced strength of boron carbide under shear loading is also demonstrated.

  6. Synthesis of boron carbide nano particles using polyvinyl alcohol and boric acid

    Directory of Open Access Journals (Sweden)

    Amir Fathi

    2012-03-01

    Full Text Available In this study boron carbide nano particles were synthesized using polyvinyl alcohol and boric acid. First, initial samples with molar ratio of PVA : H3BO3 = 2.7:2.2 were prepared. Next, samples were pyrolyzed at 600, 700 and 800°C followed by heat treatment at 1400, 1500 and 1600°C. FTIR analysis was implemented before and after pyrolysis in order to study the reaction pathway. XRD technique was used to study the composition of produced specimens of boron carbide. Moreover, SEM and PSA analysis were also carried out to study the particle size and morphology of synthesized boron carbide. Finally, according to implemented tests and analyses, carbon-free boron carbide nano particles with an average size of 81 nm and mainly spherical morphology were successfully produced via this method.

  7. Preliminary study of neutron absorption by concrete with boron carbide addition

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Zali, Nurazila Mat; Ahmad, Megat Harun Al Rashid Megat; Yazid, Hafizal [Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Ariffin, Fatin Nabilah Tajul; Ahmad, Sahrim [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor (Malaysia); Hamid, Roszilah [Department of Civil and Structural Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor (Malaysia); Mohamed, Abdul Aziz [College of Engineering, Universiti Tenaga National, Jalan Ikram-Uniten, 43000 Kajang, Selangor (Malaysia)

    2014-02-12

    Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates the most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.

  8. Standard specification for nuclear-grade boron carbide powder

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2009-01-01

    1.1 This specification defines the chemical and physical requirements for boron carbide powder intended for a variety of nuclear applications. Because each application has a different need for impurity and boron requirements, three different chemical compositions of powder are specified. In using this specification, it is necessary to dictate which type of powder is intended to be used. In general, the intended applications for the various powder types are as follows: 1.1.1 Type 1—For use as particulate material in nuclear reactor core applications. 1.1.2 Type 2—Powder that will be further processed into a fabricated shape for use in a nuclear reactor core or used in non-core applications when the powder directly or indirectly may cause adverse effects on structural components, such as halide stress corrosion of stainless steel. 1.1.3 Type 3—Powder that will be used for non-core applications or special in-core applications. 1.2 The values stated in SI units are to be regarded as standard. No other ...

  9. Study on Processing Conditions of Aluminum Matrix Composites Reinforced with Boron Carbide Particles

    Institute of Scientific and Technical Information of China (English)

    Fu Xueying; Zhang Hong; Xi Huizhi; Yi Xiaosu

    2004-01-01

    Different pre-heating of boron carbide particles for reinforcement and different processing conditions were studied in this work. Being one of the most cost-effective industrial methods, conventional melt stir-casting route was utilized.Result showed that the boron carbide particles distributed well for a suitable pre-heating temperature and processed in air.No reaction product was found at the A1-B4C interfaces at the resolution limit of SEM used in that way.

  10. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

    Science.gov (United States)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  11. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

    Science.gov (United States)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-02

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  12. An investigation on gamma attenuation behaviour of titanium diboride reinforced boron carbide–silicon carbide composites

    International Nuclear Information System (INIS)

    In this study, titanium diboride (TiB2) reinforced boron carbide–silicon carbide composites were investigated against Cs-137 and Co-60 gamma radioisotope sources. The composite materials include 70% boron carbide (B4C) and 30% silicon carbide (SiC) by volume. Titanium diboride was reinforced to boron carbide–silicon carbide composites as additive 2% and 4% by volume. Average particle sizes were 3.851 µm and 170 nm for titanium diboride which were reinforced to the boron carbide silicon carbide composites. In the experiments the gamma transmission technique was used to investigate the gamma attenuation properties of the composite materials. Linear and mass attenuation coefficients of the samples were determined. Theoretical mass attenuation coefficients were calculated from XCOM computer code. The experimental results and theoretical results were compared and evaluated with each other. It could be said that increasing the titanium diboride ratio causes higher linear attenuation values against Cs-137 and Co-60 gamma radioisotope sources. In addition decreasing the titanium diboride particle size also increases the linear and mass attenuation properties of the titanium diboride reinforced boron carbide–silicon carbide composites. - Highlights: • Linear and mass attenuation coefficients of B4C–SiC composites were investigated. • Reinforcing titanium diboride causes higher linear attenuation coefficients. • Decreasing titanium diboride particle size increases linear and mass attenuation coefficients. • Nano particle sized samples much closer to the theoretical results than micro sized ones

  13. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan;

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could...

  14. Micrometric rods grown by nanosecond pulsed laser deposition of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Quintas, Ignacio; Oujja, Mohamed; Sanz, Mikel; Benitez-Cañete, Antonio [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Chater, Richard J. [Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Cañamares, Maria Vega [Instituto de Estructura de la Materia, CSIC, Serrano 119, 28006 Madrid (Spain); Marco, José F. [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Castillejo, Marta, E-mail: marta.castllejo@iqfr.csic.es [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-02-15

    Highlights: • Micrometric rods obtained by ns pulsed laser deposition of boron carbide at 1064 and 266 nm. • At 1064 nm microrods display crystalline polyhedral shape with sharp edges and flat sides. • Microrods consist of a mixture of boron, boron oxide, boron carbide and aliphatic hydrocarbons. - Abstract: Micrometric size rods have been fabricated via pulsed laser deposition in vacuum from boron carbide targets using nanosecond pulses of 1064 and 266 nm and room temperature Si (1 0 0) substrates. Morphological, structural and chemical characterization of the microrods was made by applying scanning electron microscopy, focussed ion beam microscopy coupled to secondary ion mass spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. Ablation at 1064 nm favours the formation of microrods with high aspect ratio, sharp edges and pyramidal tips, typically 10 μm long with a cross section of around 2 μm × 2 μm. Differently, at 266 nm the microrods are of smaller size and present a more globular aspect. The analyses of the microrods provide information about their crystalline nature and composition, based on a mixture which includes boron, boron oxide and boron carbide, and allows discussion of the wavelength dependent growth mechanisms involved.

  15. Functionalization and cellular uptake of boron carbide nanoparticles. The first step toward T cell-guided boron neutron capture therapy.

    Science.gov (United States)

    Mortensen, M W; Björkdahl, O; Sørensen, P G; Hansen, T; Jensen, M R; Gundersen, H J G; Bjørnholm, T

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded with boron-containing nanoparticles can hinder the growth of neighboring cells upon neutron irradiation. This could provide the first step toward a T cell-guided boron neutron capture therapy.

  16. Lattice dynamics of {alpha} boron and of boron carbide; Proprietes vibrationnelles du bore {alpha} et du carbure de bore

    Energy Technology Data Exchange (ETDEWEB)

    Vast, N

    1999-07-01

    The atomic structure and the lattice dynamics of {alpha} boron and of B{sub 4}C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In {alpha} boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B{sub 4}C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  17. Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires

    Institute of Scientific and Technical Information of China (English)

    FU Xin; JIANG Jun; LIU Chao; YU Zhi-Yang; Steffan LEA; YUAN Jun

    2009-01-01

    We report a preferential growth of boron carbide nanowires with a Eve-fold twinned internal structure.The nanowires are found to grow catalytically via iron boron nanoparticles,but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines.We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes,followed by rapid spreading of atomic steps.This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.

  18. Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites

    Directory of Open Access Journals (Sweden)

    A.O. Addemir

    2012-03-01

    Full Text Available Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the experiments which has a single gamma-peak at 0.662 MeV. Gamma transmission technique was used for the measurements. The effects of titanium diboride particle size on radiation attenuation of titanium diboride reinforced boron carbide-silicon carbide composites were evaluated in related with gamma transmission and the results of the experiments were interpreted and compared with each other. Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the experiments which has a single gamma-peak at 0.662 MeV. Gamma transmission technique was used for the measurements. The effects of titanium diboride particle size on radiation attenuation of titanium diboride reinforced boron carbide-silicon carbide composites were evaluated in related with gamma transmission and the results of the experiments were interpreted and compared with each other. Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion

  19. Irradiation studies on carbon nanotube-reinforced boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Aitkaliyeva, Assel [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); McCarthy, Michael C.; Jeong, Hae-Kwon [Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Shao, Lin, E-mail: lshao@ne.tamu.edu [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); Department of Nuclear Engineering, Texas A and M University, College Station, TX 77843 (United States)

    2012-02-01

    Radiation response of carbon nanotube (CNT) reinforced boron carbide composite has been studied for its application as a structural component in nuclear engineering. The composite was bombarded by 140 keV He ions at room temperature to a fluence ranging from 1 Multiplication-Sign 10{sup 14} to 1 Multiplication-Sign 10{sup 17} cm{sup -2}. Two-dimensional Raman mapping shows inhomogeneous distribution of CNTs, and was used to select regions of interest for damage characterization. For CNTs, the intensities ratio of D-G bands (I{sub D}/I{sub G}) increased with fluence up to a certain value, and decreased at the fluence of 5 Multiplication-Sign 10{sup 16} cm{sup -2}. This fluence also corresponds to a trend break in the plot of FWHM (full width at half maximum) of G band vs. I{sub D}/I{sub G} ratio, which indicates amorphization of CNTs. The study shows that Raman spectroscopy is a powerful tool to quantitatively characterize radiation damage in CNT-reinforced composites.

  20. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-09-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  1. Tribological behavior of hot-pressed boron carbide with oxidation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The oxidation behavior at 973-1 273 K and the effect of oxidation on the room-temperature tribological properties of hot-pressed boron carbide ceramic were investigated. Oxidized samples were studied by X-ray diffractometer and scanning electron microscopy. It is demonstrated that the oxidation results in the formation of a thin transparent B2O3 film, and the oxide film is severely cracked during cooling due to the thermal expansion mismatch between the oxide film and B4C substrate. B2O3 reacts with moisture in air to form boric acid, which is a kind of solid lubricant. The sliding friction factors of oxidized B4C pair are about 0.05-0.08, compared to 0.25-0.35 of the as-received B4C pair. When the oxidation temperature is up to 1 273 K, severe unstability and increase of friction factor are observed. Visual inspection of the wear track reveals that the lubricant film is broken and some debris particles occur on and around the rubbing surfaces, because the friction interface is rough by the severe etching of grain boundaries.

  2. Amorphisation of boron carbide under slow heavy ion irradiation

    Science.gov (United States)

    Gosset, D.; Miro, S.; Doriot, S.; Moncoffre, N.

    2016-08-01

    Boron carbide B4C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B4C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10-2 displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  3. Gamma scintillator system using boron carbide for neutron detection

    International Nuclear Information System (INIS)

    A new approach for neutron detection enhancement to scintillator gamma-ray detectors is suggested. By using a scintillator coupled with a boron carbide (B4C) disc, the 478 keV gamma-photon emitted from the excited Li in 94% of the 10B(n,α)7Li interactions was detected. This suggests that the performance of existing gamma detection systems in Homeland security applications can be improved. In this study, a B4C disc (2 in. diameter, 0.125 in. thick) with ∼19.8% 10B was used and coupled with a scintillator gamma-ray detector. In addition, the neutron thermalization moderator was studied in order to be able to increase the neutron sensitivity. An improvement in the detector which is easy to assemble, affordable and efficient was demonstrated. Furthermore, a tailored Monte-Carlo code written in MATLAB was developed for validation of the proposed application through efficiency estimation for thermal neutrons. Validation of the code was accomplished by showing that the MATLAB code results were well correlated to a Monte-Carlo MCNP code results. The measured efficiency of the assembled experimental model was observed to be in agreement with both models calculations

  4. STURCTURAL CHARACTERISTICS AND QUANTUM CHEMISTRY CALCULATION OF Al-DOPED BORON CARBIDES

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Structural characteristics, chemical bonds and thermoelectric properties of Al-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation Xα method. The calculations show that Al atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Al to substitute B or C atom in the centers of the chain or in the icosahedra. A representative structural unit containing an Al atom is [C-B-Al]ε+-[B11C]ε-, while the structural unit without Al is [C-B-B(C)]ε--[B11C]ε+, and the coexistence of these two different structural units makes the electrical conductivity increased. As the covalent bond of Al-B or Al-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Al is added into boron carbides. With the electrical conductivity increasing and the thermal conductivity decreases, Al doping has significant effect on thermoelectric properties of boron carbides.

  5. Measurements and simulations of boron carbide as degrader material for proton therapy

    Science.gov (United States)

    Gerbershagen, Alexander; Baumgarten, Christian; Kiselev, Daniela; van der Meer, Robert; Risters, Yannic; Schippers, Marco

    2016-07-01

    We report on test measurements using boron carbide (B4C) as degrader material in comparison with the conventional graphite, which is currently used in many proton therapy degraders. Boron carbide is a material of lower average atomic weight and higher density than graphite. Calculations predict that, compared to graphite, the use of boron carbide results in a lower emittance behind the degrader due to the shorter degrader length. Downstream of the acceptance defining collimation system we expect a higher beam transmission, especially at low beam energies. This is of great interest in proton therapy applications as it allows either a reduction of the beam intensity extracted from the cyclotron leading to lower activation or a reduction of the treatment time. This paper summarizes the results of simulations and experiments carried out at the PROSCAN facility at the Paul Scherrer Institute1. The simulations predict an increase in the transmitted beam current after the collimation system of approx. 30.5% for beam degradation from 250 to 84 MeV for a boron carbide degrader compared to graphite. The experiment carried out with a boron carbide block reducing the energy to 84 MeV yielded a transmission improvement of 37% compared with the graphite degrader set to that energy.

  6. Measurements and simulations of boron carbide as degrader material for proton therapy.

    Science.gov (United States)

    Gerbershagen, Alexander; Baumgarten, Christian; Kiselev, Daniela; van der Meer, Robert; Risters, Yannic; Schippers, Marco

    2016-07-21

    We report on test measurements using boron carbide (B4C) as degrader material in comparison with the conventional graphite, which is currently used in many proton therapy degraders. Boron carbide is a material of lower average atomic weight and higher density than graphite. Calculations predict that, compared to graphite, the use of boron carbide results in a lower emittance behind the degrader due to the shorter degrader length. Downstream of the acceptance defining collimation system we expect a higher beam transmission, especially at low beam energies. This is of great interest in proton therapy applications as it allows either a reduction of the beam intensity extracted from the cyclotron leading to lower activation or a reduction of the treatment time. This paper summarizes the results of simulations and experiments carried out at the PROSCAN facility at the Paul Scherrer Institute(1). The simulations predict an increase in the transmitted beam current after the collimation system of approx. 30.5% for beam degradation from 250 to 84 MeV for a boron carbide degrader compared to graphite. The experiment carried out with a boron carbide block reducing the energy to 84 MeV yielded a transmission improvement of 37% compared with the graphite degrader set to that energy.

  7. Ultrafine-grained Aluminm and Boron Carbide Metal Matrix Composites

    Science.gov (United States)

    Vogt, Rustin

    Cryomilling is a processing technique used to generate homogenously distributed boron carbide (B4C) particulate reinforcement within an ultrafine-grained aluminum matrix. The motivation behind characterizing a composite consisting of cryomilled aluminum B4C metal matrix composite is to design and develop a high-strength, lightweight aluminum composite for structural and high strain rate applications. Cryomilled Al 5083 and B4C powders were synthesized into bulk composite by various thermomechanical processing methods to form plate and extruded geometries. The effects of processing method on microstructure and mechanical behavior for the final consolidated composite were investigated. Cryomilling for extended periods of time in liquid nitrogen has shown to increase strength and thermal stability. The effects associated with cryomilling with stearic acid additions (as a process-control agent) on the degassing behavior of Al powders is investigated and results show that the liberation of compounds associated with stearic acid were suppressed in cryomilled Al powders. The effect of thermal expansion mismatch strain on strengthening due to geometrically necessary dislocations resulting from quenching is investigated and found not to occur in bulk cryomilled Al 5083 and B 4C composites. Previous cryomilled Al 5083 and B4C composites have exhibited ultrahigh strength associated with considerable strain-to-failure (>14 pct.) at high strain rates (>103/s) during mechanical testing, but only limited strain-to-failure (˜0.75 pct.) at quasi-static strain rates (10-3/s). The increased strain to failure at high strain rates is attributed to micro-flaw developments, including kinking, extensive axial splitting, and grain growth were observed after high strain rate deformation, and the significance of these mechanisms is considered.

  8. Superconductivity in boron carbide? Clarification by low-temperature MIR/FIR spectra.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U

    2011-11-01

    The electronic structure and phonon density of B(13)B(2) boron carbide calculated by Calandra et al (2004 Phys. Rev. B 69 224505) defines this compound as metallic, and the authors predict superconductivity with T(C)s up to 36.7 K. Their results are affected by the same deficiencies as former band structure calculations on boron carbides based on hypothetical crystal structures deviating significantly from the real ones. We present optical mid IR/far IR (MIR/FIR) spectra of boron carbide with compositions between B(4.3)C and B(10.37)C, evidencing semiconducting behaviour at least down to 30 K. There is no indication of superconductivity. The spectra yield new information on numerous localized gap states close to the valence band edge.

  9. Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ponomarev, V. I., E-mail: ksv17@ism.ac.ru; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I. [Russian Academy of Sciences, Institute of Structural Macrokinetics and Materials Science (Russian Federation)

    2015-09-15

    Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide B{sub 15–x}C{sub x}, (1.5 ≤ x ≤ 3) and its magnesium derivative C{sub 4}B{sub 25}Mg{sub 1.42}. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from B{sub 12.9}C{sub 2.1} to B{sub 12.4}C{sub 2.6}.

  10. Improving tribological properties of sputtered boron carbide coatings by process modifications

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, T.; Bewilogua, K. [Fraunhofer-Institut fuer Schicht- und Oberflaechentechnik, Braunschweig (Germany); van der Kolk, G.; Hurkmans, T.; Trinh, T.; Fleischer, W. [Hauzer Techno Coating Europe BV, Van Heemskerckweg 22, NL-5920, Venlo (Netherlands)

    2000-04-03

    Boron carbide coatings are well-known for extreme hardness and excellent wear resistance. In this paper a d.c. magnetron sputter process for the deposition of boron carbide coatings is described. It is shown that by adding small amounts of a hydrocarbon reactive gas (in this case acetylene) the coefficient of friction can be reduced from 0.8 down to 0.2. Results from a laboratory scale deposition device are successfully transferred to an industrial batch coater. The coating adhesion is well enhanced by a titanium interlayer. From the analysis of the chemical composition and from hardness values it is concluded that a structural modification is responsible for the improvement of sliding behaviour. It is suggested that the introduction of additional bondings reduces the brittleness of boron carbide. Furthermore, a comparison with metal-containing amorphous carbon coatings (Me-DLC) reveals several similarities. (orig.)

  11. Evaluation of mechanical properties of aluminium alloy–alumina–boron carbide metal matrix composites

    International Nuclear Information System (INIS)

    Highlights: • Fabrication of MMC with aluminium alloy–alumina–boron carbide is done. • Different proportions of reinforcements are added. • The effects of varying proportions are studied. • Investigation on mechanical properties above composites is performed. • Failure morphology analysis is done using SEM. - Abstract: This paper deals with the fabrication and mechanical investigation of aluminium alloy, alumina (Al2O3) and boron carbide metal matrix composites. Aluminium is the matrix metal having properties like light weight, high strength and ease of machinability. Alumina which has better wear resistance, high strength, hardness and boron carbide which has excellent hardness and fracture toughness are added as reinforcements. Here, the fabrication is done by stir casting which involves mixing the required quantities of additives into stirred molten aluminium. After solidification, the samples are prepared and tested to find the various mechanical properties like tensile, flexural, impact and hardness. The internal structure of the composite is observed using Scanning Electron Microscope (SEM)

  12. Elastic properties of boron carbide films via surface acoustic waves measured by Brillouin light scattering

    Energy Technology Data Exchange (ETDEWEB)

    Salas, E.; Jimenez-Villacorta, F.; Jimenez Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Sanchez-Marcos, J. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Departamento de Quimica-Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Munoz-Martin, A.; Prieto, J.E.; Joco, V. [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2013-03-15

    Surface acoustic wave (SAW) velocity has been determined by high resolution Brillouin light scattering to study the mechano-elastic properties of boron carbide films prepared by radio frequency (RF) sputtering. The comparison of experimentally observed elastic behaviour with simulations made by considering film composition obtained from elastic recoil detection analysis-time of flight (ERDA-ToF) spectroscopy allows establishing that elastic properties are determined by that of crystalline boron carbide with a lessening of the SAW velocity values due to surface oxidation. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. A thermo dynamical model for the shape and size effect on melting of boron carbide nanoparticles.

    Science.gov (United States)

    Antoniammal, Paneerselvam; Arivuoli, Dakshanamoorthy

    2012-02-01

    The size and shape dependence of the melting temperature of Boron Carbide (B4C) nanoparticles has been investigated with a numerical thermo dynamical approach. The problem considered in this paper is the inward melting of nanoparticles with spherical and cylindrical geometry. The cylindrical Boron Carbide (B4C) nanoparticles, whose melting point has been reported to decrease with decreasing particle radius, become larger than spherical shaped nanoparticle. Comparative investigation of the size dependence of the melting temperature with respect to the two shapes is also been done. The melting temperature obtained in the present study is approximately a dealing function of radius, in a good agreement with prediction of thermo dynamical model.

  14. Friction and wear performance of diamond-like carbon, boron carbide, and titanium carbide coatings against glass

    International Nuclear Information System (INIS)

    Protection of glass substrates by direct ion beam deposited diamond-like carbon (DLC) coatings was observed using a commercial pin-on-disk instrument at ambient conditions without lubrication. Ion beam sputter-deposited titanium carbide and boron carbide coatings reduced sliding friction, and provided tribological protection of silicon substrates, but the improvement factor was less than that found for DLC. Observations of unlubricated sliding of hemispherical glass pins at ambient conditions on uncoated glass and silicon substrates, and ion beam deposited coatings showed decreased wear in the order: uncoated glass>uncoated silicon>boron carbide>titanium carbide>DLC>uncoated sapphire. Failure mechanisms varied widely and are discussed. Generally, the amount of wear decreased as the sliding friction decreased, with the exception of uncoated sapphire substrates, for which the wear was low despite very high friction. There is clear evidence that DLC coatings continue to protect the underlying substrate long after the damage first penetrates through the coating. The test results correlate with field use data on commercial products which have shown that the DLC coatings provide substantial extension of the useful lifetime of glass and other substrates. copyright 1997 Materials Research Society

  15. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  16. Chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    1981-01-01

    The standard covers analytical procedures to determine compliance of nuclear-grade boron carbide powder and pellets to specifications. The following methods are described in detail: total carbon by combustion and gravimetry; total boron by titrimetry; isotopic composition by mass spectrometry; chloride and fluoride separation by pyrohydrolysis; chloride by constant-current coulometry; fluoride by ion-selective electrode; water by constant-voltage coulometry; impurities by spectrochemical analysis; soluble boron by titrimetry; soluble carbon by a manometric measurement; metallic impurities by a direct reader spectrometric method. (JMT)

  17. Evidence of amorphisation of B4C boron carbide under slow, heavy ion irradiation

    Science.gov (United States)

    Gosset, D.; Miro, S.; Doriot, S.; Victor, G.; Motte, V.

    2015-12-01

    Boron carbide is widely used either as armor-plate or neutron absorber. In both cases, a good structural stability is required. However, a few studies have shown amorphisation may occur in severe conditions. Hard impacts lead to the formation of amorphous bands. Some irradiations in electronic regime with H or He ions have also shown amorphisation of the material. Most authors however consider the structure is not drastically affected by irradiations in the ballistic regime. Here, we have irradiated at room temperature dense boron carbide pellets with Au 4 MeV ions, for which most of the damage is in the ballistic regime. This study is part of a program devoted to the behavior of boron carbide under irradiation. Raman observations have been performed after the irradiations together with transmission electron microscopy (TEM). Raman observations show a strong structural damage at moderate fluences (1014/cm2, about 0.1 dpa), in agreement with previous studies. On the other hand, TEM shows the structure remains crystalline up to 1015/cm2 then partially amorphises. The amorphisation is heterogeneous, with the formation of nanometric amorphous zones with increasing density. It then appears short range and long range disorder occurs at quite different damage levels. Further experiments are in progress aiming at studying the structural stability of boron carbide and isostructural materials (α-B, B6Si,…).

  18. Fluid flow phenomena in the generation of boron carbide suspensions in magnesium melts

    Science.gov (United States)

    Ilegbusi, O. J.; Szekely, J.

    1988-01-01

    A mathematical representation is developed for the behavior of moderately concentrated magnesium-boron carbide suspensions when subjected to electromagnetic stirring or mechanical agitation. A power-law relationship is employed for the apparent non-Newtonian viscosity of the suspension.

  19. Standard specification for nuclear-grade aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2005-01-01

    1.1 This specification applies to pellets composed of mixtures of aluminum oxide and boron carbide that may be ultimately used in a reactor core, for example, in neutron absorber rods. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

  20. Aluminum-titanium hydride-boron carbide composite provides lightweight neutron shield material

    Science.gov (United States)

    Poindexter, A. M.

    1967-01-01

    Inexpensive lightweight neutron shield material has high strength and ductility and withstands high internal heat generation rates without excessive thermal stress. This composite material combines structural and thermal properties of aluminum, neutron moderating properties of titanium hydride, and neutron absorbing characteristics of boron carbide.

  1. An experimental investigation of wire electrical discharge machining of hot-pressed boron carbide

    Directory of Open Access Journals (Sweden)

    Ravindranadh Bobbili

    2015-12-01

    Full Text Available The present work discusses the experimental study on wire-cut electric discharge machining of hot-pressed boron carbide. The effects of machining parameters, such as pulse on time (TON, peak current (IP, flushing pressure (FP and spark voltage on material removal rate (MRR and surface roughness (Ra of the material, have been evaluated. These parameters are found to have an effect on the surface integrity of boron carbide machined samples. Wear rate of brass wire increases with rise in input energy in machining of hot-pressed boron carbide. The surfaces of machined samples were examined using scanning electron microscopy (SEM. The influence of machining parameters on mechanism of MRR and Ra was described. It was demonstrated that higher TON and peak current deteriorate the surface finish of boron carbide samples and result in the formation of large craters, debris and micro cracks. The generation of spherical particles was noticed and it was attributed to surface tension of molten material. Macro-ridges were also observed on the surface due to protrusion of molten material at higher discharge energy levels.

  2. Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lumin [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science; Wierschke, Jonathan Brett [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science

    2015-04-08

    The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H3BO3). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

  3. Gamma and neutron attenuation behaviours of boron carbide–silicon carbide composites

    International Nuclear Information System (INIS)

    Highlights: • Gamma and neutron attenuation behaviours of B4C–SiC composites were investigated. • Increasing SiC ratio increases gamma attenuation behaviour of the B4C–SiC composites. • Increasing SiC ratio decrease attenuation behaviour of the B4C–SiC composites. • HVT values of the B4C–SiC composites were calculated for Cs-137, Co-60 and Pu–Be sources. • Experimental mass attenuation coefficient are compatible with theoretical (XCOM) values. - Abstract: In this study, the gamma and neutron attenuation behaviors of pure boron carbide and boron carbide–silicon carbide composites which include three different silicon carbide ratios (20%, 30%, and 40%) by volume were investigated against Cs-137, Co-60 gamma radioisotope sources and Pu–Be neutron source. Transmission technique was used in the experiments to investigate the gamma and neutron attenuation properties of the materials. Linear and mass attenuation coefficients of the samples were determined for 0.662 (Cs-137) and 1.25 MeV (Co-60) energetic gamma rays. In addition the total macroscopic cross-sections (∑T) were calculated for the materials against Pu–Be neutron source. Theoretical mass attenuation coefficients were calculated from XCOM computer code. The experimental and theoretical mass attenuation coefficients were compared and evaluated with each other. In addition half value thickness (HVT) calculations were carried out by using linear attenuation coefficients and total macroscopic cross-sections. The results showed that increasing silicon carbide ratio decreases HVTs against Cs-137 and Co-60 gamma radioisotope sources whereas increases HVTs against Pu–Be neutron source. The mass attenuation coefficients were compatible with the theoretical (XCOM) values. Increasing silicon carbide ratio in boron carbide–silicon carbide composites causes higher gamma attenuation and lower neutron attenuation values

  4. Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

    Energy Technology Data Exchange (ETDEWEB)

    Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Buzhinskiy, O. I. [State Research Center Troitsk Institute for Innovation and Fusion Research (TRINITI) (Russian Federation); Grunin, A. V.; Gordeev, A. A.; Zakharov, A. M.; Kalachev, A. M.; Sadovskiy, Ya. A.; Shigin, P. A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2015-12-15

    A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

  5. Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

    Science.gov (United States)

    Airapetov, A. A.; Begrambekov, L. B.; Buzhinskiy, O. I.; Grunin, A. V.; Gordeev, A. A.; Zakharov, A. M.; Kalachev, A. M.; Sadovskiy, Ya. A.; Shigin, P. A.

    2015-12-01

    A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400-1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

  6. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy.

    Science.gov (United States)

    Mortensen, M W; Sørensen, P G; Björkdahl, O; Jensen, M R; Gundersen, H J G; Bjørnholm, T

    2006-03-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using transmission electron microscopy, photon correlation spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, vibrational spectroscopy, gel electrophoresis and chemical assays and reveal profound changes in surface chemistry and structural characteristics. In vitro thermal neutron irradiation of B16 melanoma cells incubated with sub-100 nm nanoparticles (381.5 microg/g (10)B) induces complete cell death. The nanoparticles alone induce no toxicity.

  7. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Science.gov (United States)

    Chaudhari, Pradip; Singh, Arvind; Topkar, Anita; Dusane, Rajiv

    2015-04-01

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and 10B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 μm and 0.5 μm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  8. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhari, Pradip, E-mail: pradipcha@gmail.com [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India); Singh, Arvind, E-mail: arvindsingh1884@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Topkar, Anita, E-mail: anita.topkar@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Dusane, Rajiv, E-mail: rodusane@iitb.ac.in [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India)

    2015-04-11

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and {sup 10}B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 µm and 0.5 µm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  9. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    International Nuclear Information System (INIS)

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and 10B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 µm and 0.5 µm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors

  10. Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide

    OpenAIRE

    An, Qi; Goddard, William A.; Cheng, Tao

    2014-01-01

    Boron carbide (B_4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (011 ¯  1 ¯ )/⟨1 ¯ 101⟩ slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon ...

  11. Thermal-shock Resistance of a Ceramic Comprising 60 Percent Boron Carbide and 40 Percent Titanium Diboride

    Science.gov (United States)

    Yeomans, C M; Hoffman, C A

    1953-01-01

    Thermal-shock resistance of a ceramic comprising 60 percent boron carbide and 40 percent titanium diboride was investigated. The material has thermal shock resistance comparable to that of NBS body 4811C and that of zirconia, but is inferior to beryllia, alumina, and titanium-carbide ceramals. It is not considered suitable for turbine blades.

  12. Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism

    Science.gov (United States)

    Ji, Wei; Rehman, Sahibzada Shakir; Wang, Weimin; Wang, Hao; Wang, Yucheng; Zhang, Jinyong; Zhang, Fan; Fu, Zhengyi

    2015-10-01

    A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties, including Vickers hardness of 37.8 GPa, flexural strength of 445.3 MPa and fracture toughness of 4.7 MPa•m0.5. Such a process should also facilitate the cost-effective preparation of other advanced ceramics for practical applications.

  13. Boron carbide (B{sub 4}C) coating. Deposition and testing

    Energy Technology Data Exchange (ETDEWEB)

    Azizov, E.; Barsuk, V. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Begrambekov, L., E-mail: lbb@plasma.mephi.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Buzhinsky, O. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Evsin, A.; Gordeev, A.; Grunin, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Klimov, N. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Kurnaev, V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Mazul, I. [Federal State Unitary Interprise Efremov Scientific Research Institute of Electrophysical Apparatus (NIIEFA Efremov), St-Peterburg (Russian Federation); Otroshchenko, V.; Putric, A. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Sadovskiy, Ya.; Shigin, P.; Vergazov, S.; Zakharov, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-08-15

    Boron carbide was proposed as a material of in-situ protecting coating for tungsten tiles of ITER divertor. To prove this concept the project including investigation of regimes of plasma deposition of B{sub 4}C coating on tungsten and tests of boron carbide layer in ITER-like is started recently. The paper contends the first results of the project. The results of B{sub 4}C coating irradiation by the plasma pulses of QSPU-T plasma accelerator are presented. The new device capable of B{sub 4}C film deposition on tungsten and testing of the films and materials with ITER-like heat loads and ion- and electron irradiation is described. The results of B{sub 4}C coating deposition and testing of both tungsten substrate and coating are shown and discussed.

  14. de Haas-van Alphen investigations of nonmagnetic boron carbide superconductors

    International Nuclear Information System (INIS)

    The dissertation presents de Haas-van Alphen investigations on the nonmagnetic boron carbide superconductors LuNi2B2C and YNi2B2C. From the quantum oscillations in the normal conductivity phase, in combination with band structure calculations, information was obtained on the distributed Fermi surface architecture and on the electron-phonon coupling of the boron carbides. The coupling is strongly anisotropic and dependent on the Fermi surfaces. This suggests a multiband mechanism of superconductivity in this material class. Further, de Haas-van-Alphen oscillations of several Fermi surfaces were observed below Bc2 in the deep Shubnikov phase, whose behaviour cannot be described by existing theories. It may be assumed, however, that the existence of oscillations far below Bc2 suggests the existence of electronic states in the Shubnikov phase. (orig.)

  15. Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism.

    Science.gov (United States)

    Ji, Wei; Rehman, Sahibzada Shakir; Wang, Weimin; Wang, Hao; Wang, Yucheng; Zhang, Jinyong; Zhang, Fan; Fu, Zhengyi

    2015-10-27

    A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties, including Vickers hardness of 37.8 GPa, flexural strength of 445.3 MPa and fracture toughness of 4.7 MPa•m(0.5). Such a process should also facilitate the cost-effective preparation of other advanced ceramics for practical applications.

  16. Theoretical Calculation on Optimum Si-doping Content in Boron Carbide Thin Film

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The theoretical expression of the relationship between optimum doping content and crystal structure is presented as well as the preparation methods. By using this expression, the optimum doping content of silicon-doped boron carbide thin film is calculated. The quantitative calculation value is consistent with the experimental results. This theoretical expression is also appropriate to resolve the optimum doping content for other electric materials.

  17. Surface energy and relaxation in boron carbide (101¯1) from first principles

    Science.gov (United States)

    Beaudet, Todd D.; Smith, John R.; Adams, Jane W.

    2015-10-01

    The surface energy of the boron carbide polytype B11Cp(CBC) for planar separations along {101¯1} was determined to be 3.21 J/m2 via first-principles density-functional computations. Surface atomic relaxations are relatively large, thereby lowering the surface energy significantly. The icosahedra are not intact on the surface, i.e., severed polyhedra are the lowest energy surface configuration. Good agreement was found with an experimental average fracture surface energy.

  18. From boron carbide to glass: Absorption of an elongated high-speed projectile in brittle materials

    Science.gov (United States)

    Rumyantsev, B. V.

    2016-09-01

    Penetration into boron carbide of an elongated high-speed projectile in the form of a copper jet produced by an explosion of a cumulative charge is studied. The efficiency of absorption of a copper jet in different brittle materials for evaluating their protective ability is compared. Conditions for the absence of the influence of the lateral unloading wave on the penetration zone, which provide the minimum penetration depth, are determined.

  19. High-temperature mechanical properties of aluminium alloys reinforced with boron carbide particles

    Energy Technology Data Exchange (ETDEWEB)

    Onoro, J. [Dept. Ingenieria y Ciencia de los Materiales, ETSI Industriales, Universidad Politecnica de Madrid, c/Jose Gutierrez Abascal 2, 28006 Madrid (Spain)], E-mail: javier.onoro@upm.es; Salvador, M.D. [Dept. Ingenieria Mecanica y de Materiales, ETSI Industriales, Universidad Politecnica de Valencia, Camino de Vera s/n, 46071 Valencia (Spain); Cambronero, L.E.G. [Dept. Ingenieria de Materiales, ETSI Minas, Universidad Politecnica de Madrid, c/Rios Rosas 21, 28003 Madrid (Spain)

    2009-01-15

    The mechanical properties of particulate-reinforced metal-matrix composites based on aluminium alloys (6061 and 7015) at high temperatures were studied. Boron carbide particles were used as reinforcement. All composites were produced by hot extrusion. The tensile properties and fracture analysis of these materials were investigated at room temperature and at high temperature to determine their ultimate strength and strain to failure. The fracture surface was analysed by scanning electron microscopy.

  20. Structural modifications induced by ion irradiation and temperature in boron carbide B4C

    Science.gov (United States)

    Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

    2015-12-01

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

  1. Tribological behaviour of mechanically synthesized titanium-boron carbide nanostructured coating.

    Science.gov (United States)

    Aliofkhazraei, M; Rouhaghdam, A Sabour

    2012-08-01

    In this paper, titanium-boron carbide (Ti/B4C) nanocomposite coatings with different B4C nanoparticles contents were fabricated by surface mechanical attrition treatment (SMAT) method by using B4C nanoparticles with average nanoparticle size of 40 nm. The characteristics of the nanopowder and coatings were evaluated by microhardness test, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Friction and wear performances of nanocomposite coatings and pure titanium substrate were comparatively investigated, with the effect of the boron carbide content on the friction and wear behaviours to be emphasized. The results show the microhardness, friction and wear behaviours of nanocomposite coatings are closely related with boron carbide nanoparticle content. Nanocomposite coating with low B4C content shows somewhat (slight) increased microhardness and wear resistance than pure titanium substrate, while nanocomposite coating with high B4C content has much better (sharp increase) wear resistance than pure titanium substrate. The effect of B4C nanoparticles on microhardness and wear resistance was discussed.

  2. Electro-Explosive Doping of VT6 Titanium Alloy Surface by Boron Carbide

    Science.gov (United States)

    Kobzareva, T. Yu; Gromov, V. E.; Ivanov, Yu F.; Budovskkh, E. A.; Konovalov, S. V.

    2016-09-01

    The studies carried out in this work target detection of changes in the surface layer of titanium alloy VT6 after electro-explosive alloying (EEA) by boron carbide. EEA of VT6 titanium alloy surface is the plasma alloying formed during the electric explosion of foil with the sample powder of boron carbide. Carbon fibers with weight 140 mg were used as an explosive conductor. Sample powder of boron carbide B4C was placed in the area of explosion on the carbon fibers. It was revealed that EEA of the surface layers of titanium alloy samples VT6 leads to the modification of the layer, thickness of which changes from 10 pm to 50 pm. Heterogeneous distribution of alloying elements was found in the treatment zone by the methods of X-ray microanalysis. A significant difference in their concentration in the identified layers leads to difference in their structural and tribological behaviour. It was revealed that after electro-explosive alloying the microhardness of titanium alloy VT6 significantly increases. Electro-explosive alloying leads to the formation of a structure of submicro- and nano-scale level. It allows strength and tribological properties of the treated surface to be increased.

  3. Determination of nitrogen in boron carbide by instrumental photon activation analysis.

    Science.gov (United States)

    Merchel, Silke; Berger, Achim

    2007-05-01

    Boron carbide is widely used as industrial material, because of its extreme hardness, and as a neutron absorber. As part of a round-robin exercise leading to certification of a new reference material (ERM-ED102) which was demanded by the industry we analysed nitrogen in boron carbide by inert gas fusion analysis (GFA) and instrumental photon activation analysis (IPAA) using the 14N(gamma,n)13N nuclear reaction. The latter approach is the only non-destructive method among all the methods applied. By using photons with energy below the threshold of the 12C(gamma,n)11C reaction, we hindered activation of matrix and other impurities. A recently installed beam with a very low lateral activating flux gradient enabled us to homogeneously activate sample masses of approximately 1 g. Taking extra precautions, i.e. self-absorption correction and deconvolution of the complex decay curves, we calculated a nitrogen concentration of 2260+/-100 microg g-1, which is in good agreement with our GFA value of 2303+/-64 microg g-1. The values are the second and third highest of a rather atypical (non-S-shape) distribution of data of 14 round-robin participants. It is of utmost importance for the certification process that our IPAA value is the only one not produced by inert gas fusion analysis and, therefore, the only one which is not affected by a possible incomplete release of nitrogen from high-melting boron carbide.

  4. Preparation and characterization of sputtered boron nitride and boron carbide films and their modification by ion implantation

    International Nuclear Information System (INIS)

    Nanocrystalline cubic boron nitride and boron carbide films have been synthesized using sputtering. The relationship between the structures and properties as well as the influence of the deposition parameters, such as rf power, bias voltage, substrate temperature, composition and flow rate of the sputtering gas, on the structures and properties have been studied. The influence of the ion bombardment could be described by the specific ion momentum P*=[ion momentum.(ion flux/atom flux)]. The specific ion momentum was found to be proportional to the rf power and to the 1.5th power of the bias voltage. Two phases have been identified in our boron nitride films: hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN); the films were either single phase or contained a mixture of these two phases. Nanocrystalline boron films have been grown with a deposition rate of 2 nm/s not only on Si but also on hard metal (WC-6%Co) substrates. Stoichiometric and crystalline films have already been grown at room temperature (about 0.1 Tm, Tm=melting point-3900 K). All the films contained about 8 at% carbon and 6 at% oxygen as impurities, which come mainly from the targt. The concentration of the impurities is independent of the deposition paramters. The growth of c-BN appears after the specific ion momentum larger than a threshold value, which is dependent on the substrate temperature, composition and on the flow rate of the sputtering gas. The volume content of c-BN runs through a maximum value with increasing specific ion momentum. (orig.)

  5. Methyldichloroborane evidenced as an intermediate in the chemical vapour deposition synthesis of boron carbide.

    Science.gov (United States)

    Reinisch, G; Patel, S; Chollon, G; Leyssale, J-M; Alotta, D; Bertrand, N; Vignoles, G L

    2011-09-01

    The most recent ceramic-matrix composites (CMC) considered for long-life applications as thermostructural parts in aerospace propulsion contain, among others, boron-rich phases like boron carbide. This compound is prepared by thermal Chemical Vapour Infiltration (CVI), starting from precursors like boron halides and hydrocarbons. We present a study aiming at a precise knowledge of the gas-phase composition in a hot-zone LPCVD reactor fed with BCl3, CH4 and H2, which combines experimental and theoretical approaches. This work has brought strong evidences of the presence of Methydichloroborane (MDB, BCl2CH3) in the process. It is demonstrated that this intermediate, the presence of which had never been formally proved before, appears for processing temperatures slightly lower than the deposition temperature of boron carbide. The study features quantum chemical computations, which provide several pieces of information like thermochemical and kinetic data, as well as vibration and rotation frequencies, reaction kinetics computations, and experimental gas-phase characterization of several species by FTIR, for several processing parameter sets. The main results are presented, and the place of MDB in the reaction scheme is discussed.

  6. Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

    Energy Technology Data Exchange (ETDEWEB)

    Echeverria, Elena; Enders, A.; Dowben, P.A. [University of Nebraska-Lincoln, Department of Physics and Astronomy, Lincoln, NE (United States); James, Robinson; Chiluwal, Umesh; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Kelber, Jeffry A. [University of North Texas, Department of Chemistry, Denton, TX (United States); Pasquale, Frank L. [University of North Texas, Department of Chemistry, Denton, TX (United States); Lam Research Corporation, PECVD Business Unit, Tualatin, OR (United States); Colon Santana, Juan A. [Center for Energy Sciences Research, Lincoln, NE (United States)

    2014-09-19

    Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B{sub 10}C{sub 2}H{sub X}), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials. (orig.)

  7. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2004-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide powder and pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Total Carbon by Combustion and Gravimetry 7-17 Total Boron by Titrimetry 18-28 Isotopic Composition by Mass Spectrometry 29-38 Chloride and Fluoride Separation by Pyrohydrolysis 39-45 Chloride by Constant-Current Coulometry 46-54 Fluoride by Ion-Selective Electrode 55-63 Water by Constant-Voltage Coulometry 64-72 Impurities by Spectrochemical Analysis 73-81 Soluble Boron by Titrimetry 82-95 Soluble Carbon by a Manometric Measurement 96-105 Metallic Impurities by a Direct Reader Spectrometric Method 106-114

  8. Synergistic methods for the production of high-strength and low-cost boron carbide

    Science.gov (United States)

    Wiley, Charles Schenck

    2011-12-01

    Boron carbide (B4C) is a non-oxide ceramic in the same class of nonmetallic hard materials as silicon carbide and diamond. The high hardness, high elastic modulus and low density of B4C make it a nearly ideal material for personnel and vehicular armor. B4C plates formed via hot-pressing are currently issued to U.S. soldiers and have exhibited excellent performance; however, hot-pressed articles contain inherent processing defects and are limited to simple geometries such as low-curvature plates. Recent advances in the pressureless sintering of B4C have produced theoretically-dense and complex-shape articles that also exhibit superior ballistic performance. However, the cost of this material is currently high due to the powder shape, size, and size distribution that are required, which limits the economic feasibility of producing such a product. Additionally, the low fracture toughness of pure boron carbide may have resulted in historically lower transition velocities (the projectile velocity range at which armor begins to fail) than competing silicon carbide ceramics in high-velocity long-rod tungsten penetrator tests. Lower fracture toughness also limits multi-hit protection capability. Consequently, these requirements motivated research into methods for improving the densification and fracture toughness of inexpensive boron carbide composites that could result in the development of a superior armor material that would also be cost-competitive with other high-performance ceramics. The primary objective of this research was to study the effect of titanium and carbon additives on the sintering and mechanical properties of inexpensive B4C powders. The boron carbide powder examined in this study was a sub-micron (0.6 mum median particle size) boron carbide powder produced by H.C. Starck GmbH via a jet milling process. A carbon source in the form of phenolic resin, and titanium additives in the form of 32 nm and 0.9 mum TiO2 powders were selected. Parametric studies of

  9. Observation of 'hidden' planar defects in boron carbide nanowires and identification of their orientations.

    Science.gov (United States)

    Guan, Zhe; Cao, Baobao; Yang, Yang; Jiang, Youfei; Li, Deyu; Xu, Terry T

    2014-01-15

    The physical properties of nanostructures strongly depend on their structures, and planar defects in particular could significantly affect the behavior of the nanowires. In this work, planar defects (twins or stacking faults) in boron carbide nanowires are extensively studied by transmission electron microscopy (TEM). Results show that these defects can easily be invisible, i.e., no presence of characteristic defect features like modulated contrast in high-resolution TEM images and streaks in diffraction patterns. The simplified reason of this invisibility is that the viewing direction during TEM examination is not parallel to the (001)-type planar defects. Due to the unique rhombohedral structure of boron carbide, planar defects are only distinctive when the viewing direction is along the axial or short diagonal directions ([100], [010], or 1¯10) within the (001) plane (in-zone condition). However, in most cases, these three characteristic directions are not parallel to the viewing direction when boron carbide nanowires are randomly dispersed on TEM grids. To identify fault orientations (transverse faults or axial faults) of those nanowires whose planar defects are not revealed by TEM, a new approach is developed based on the geometrical analysis between the projected preferred growth direction of a nanowire and specific diffraction spots from diffraction patterns recorded along the axial or short diagonal directions out of the (001) plane (off-zone condition). The approach greatly alleviates tedious TEM examination of the nanowire and helps to establish the reliable structure-property relations. Our study calls attention to researchers to be extremely careful when studying nanowires with potential planar defects by TEM. Understanding the true nature of planar defects is essential in tuning the properties of these nanostructures through manipulating their structures.

  10. Observation of ‘hidden’ planar defects in boron carbide nanowires and identification of their orientations

    Science.gov (United States)

    2014-01-01

    The physical properties of nanostructures strongly depend on their structures, and planar defects in particular could significantly affect the behavior of the nanowires. In this work, planar defects (twins or stacking faults) in boron carbide nanowires are extensively studied by transmission electron microscopy (TEM). Results show that these defects can easily be invisible, i.e., no presence of characteristic defect features like modulated contrast in high-resolution TEM images and streaks in diffraction patterns. The simplified reason of this invisibility is that the viewing direction during TEM examination is not parallel to the (001)-type planar defects. Due to the unique rhombohedral structure of boron carbide, planar defects are only distinctive when the viewing direction is along the axial or short diagonal directions ([100], [010], or 1¯10) within the (001) plane (in-zone condition). However, in most cases, these three characteristic directions are not parallel to the viewing direction when boron carbide nanowires are randomly dispersed on TEM grids. To identify fault orientations (transverse faults or axial faults) of those nanowires whose planar defects are not revealed by TEM, a new approach is developed based on the geometrical analysis between the projected preferred growth direction of a nanowire and specific diffraction spots from diffraction patterns recorded along the axial or short diagonal directions out of the (001) plane (off-zone condition). The approach greatly alleviates tedious TEM examination of the nanowire and helps to establish the reliable structure–property relations. Our study calls attention to researchers to be extremely careful when studying nanowires with potential planar defects by TEM. Understanding the true nature of planar defects is essential in tuning the properties of these nanostructures through manipulating their structures. PMID:24423258

  11. 碳化硼的研究进展%Progress of Research on Boron Carbide

    Institute of Scientific and Technical Information of China (English)

    刘珅楠; 孙帆; 谭章娜; 袁青; 周凯静; 马剑华

    2015-01-01

    碳化硼是高性能陶瓷材料中的一种重要原料,包含诸多的优良性能,除了高硬度、低密度等性能外,它还具备高化学稳定性和中子吸收截面及热电性能等特性,在国防军事设备、功能陶瓷、热电元件等诸多领域具有十分广泛的应用。本文重点介绍了碳化硼的相关性质、研究进展和应用现状。详细地介绍了碳化硼的制备方法,如电弧炉碳热还原法、自蔓延高温法、化学气相沉积法、溶胶-凝胶法等方法,并分析了它们的优缺点。%Boron carbide is a kind of important raw materials of high performanceceramic material, including many excellent performance. In addition to highhardness and low density properties, it also has high chemical stability andneutron absorption cross section and thermoelectric properties, which are widely used in national defense and military equipment, functional ceramics and thermoelectric element fields. The current research progress and application of relevant properties, boron carbide were introduced. The preparation methods of boron carbide, such as carbon arc furnace reduction method, self-propagating high temperature method, chemical vapor deposition, sol-gel method, were mainly introduced, and their advantages and disadvantages were analyzed.

  12. Fabrication and Radiocharacterization of Boron Carbide and Tungsten Incorporated Rubber Shields

    Directory of Open Access Journals (Sweden)

    Marzieh Salimi

    2013-10-01

    Full Text Available Radioactive ray safeguard is a physical impediment which is placed between radioactive source and the protected object in order to decrease the amount of rays' radiation in the protected area. Different materials such as lead, iron, graphite, water, poly ethylene, concrete, or rubber can be used for protection against nuclear radiations. In safeguard's common designing, two types of Gama and Neutron radiations are usually considered. The weakening amount of Gama radiations is proportional to the mass and atomic number of the safeguard's material. Covering Neutron source varies with regard to the source power and its application. However, what is always true is having the least dose with the least dimensions outside the safeguard. The dose of the safeguard's outside partition is resulted from quick, slow and thermal neutrons, and also from the source's Gammas and secondary Gammas. Neutrons use retarding and neutron-absorbing materials in order to reduce the dose. Due to the weak mechanical characteristics of the pure elastic composites, fillers are used to strengthen and improve their characteristics. Strengthening the elastic material is often defined through increasing the characteristics such as hardness, module, refraction energy, solidity, tear resistance, tensile solidity, lassitude resistance, abrasion resistance. In this paper, rubber shielding materials with boron carbide and tungsten as impurities have been fabricated. The optimum boron carbide contents (5% weight percent have been evaluated using the Monte Carlo code, MCNP. The gamma attenuation coefficients for different boron carbide and tungsten contents have been measured for a number of rubber shields with dimensions of 1×9×16cm3.

  13. Synthesis of low carbon boron carbide powder using a minimal time processing route: Thermal plasma

    Directory of Open Access Journals (Sweden)

    Avinna Mishra

    2015-12-01

    Full Text Available Boron carbide powder was synthesized by thermal plasma reduction of boric acid in presence of graphite with a very minimal processing time. Subsequently, the as-synthesized products were leached to minimize the impurities content. Based on the results of X-ray diffraction and Raman spectroscopy, the effect of leaching on phase purity and crystallinity was studied. X-ray photoelectron spectroscopy was performed to identify the chemical composition which highlighted the absence of the BO bonding in the deconvoluted B 1s core-level spectrum. Finally, the temperature dependent thermal conductivity behavior of the leached materials was analyzed and presented.

  14. Lightweight graphene nanoplatelet/boron carbide composite with high EMI shielding effectiveness

    OpenAIRE

    Yongqiang Tan; Heng Luo; Haibin Zhang; Xiaosong Zhou; Shuming Peng

    2016-01-01

    Lightweight graphene nanoplatelet (GNP)/boron carbide (B4C) composites were prepared and the effect of GNPs loading on the electromagnetic interference (EMI) shielding effectiveness (SE) has been evaluated in the X-band frequency range. Results have shown that the EMI SE of GNP/B4C composite increases with increasing the GNPs loading. An EMI SE as high as 37 ∼ 39 dB has been achieved in composite with 5 vol% GNPs. The high EMI SE is mainly attributed to the high electrical conductivity, high ...

  15. Transport properties of boron-doped single-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.T. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Ding, R.X., E-mail: rx_ding@163.co [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Song, J.X. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); School of Electronic Engineering, Xi' an Shiyou University, Xi' an 710075 (China)

    2011-01-15

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  16. Atomistic explanation of shear-induced amorphous band formation in boron carbide.

    Science.gov (United States)

    An, Qi; Goddard, William A; Cheng, Tao

    2014-08-29

    Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (0111)/ slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.

  17. Preparation of titanium diboride powders from titanium alkoxide and boron carbide powder

    Indian Academy of Sciences (India)

    Hamed Sinaei Pour Fard; Hamidreza Baharvandi

    2011-07-01

    Titanium diboride powders were prepared through a sol–gel and boron carbide reduction route by using TTIP and B4C as titanium and boron sources. The influence of TTIP concentration, reaction temperature and molar ratio of precursors on the synthesis of titanium diboride was investigated. Three different concentrations of TTIP solution, 0.033/0.05/0.1, were prepared and the molar ratio of B4C to TTIP varied from 1.3 to 2.5. The results indicated that as the TTIP concentration had an important role in gel formation, the reaction temperature and B4C to TTIP molar ratio showed obvious effects on the formation of TiB2. Pure TiB2 was prepared using molar composition of Ti : B4C = 1 : 2.3 and the optimum synthesis temperature was 1200°C.

  18. Production of boron carbide powder by carbothermal synthesis of gel material

    Indian Academy of Sciences (India)

    A K Khanra

    2007-04-01

    Boron carbide (B4C) powder has been produced by carbothermal reduction of boric acid–citric acid gel. Initially a gel of boric acid–citric acid is prepared in an oven at 100°C. This gel is pyrolyzed in a high temperature furnace over a temperature range of 1000–1800°C. The reaction initiation temperature range for B4C formation is determined by thermal analysis. The optimal pyrolysis temperature of B4C synthesis is investigated. During pyrolysis, the evaporation of boron-rich phases results in presence of free carbon in B4C powder. The electron micrographs and particle size analyser reveal the generation of fine B4C particles.

  19. Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide

    Science.gov (United States)

    An, Qi; Goddard, William A.; Cheng, Tao

    2014-08-01

    Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (011¯ 1¯)/⟨1¯101⟩ slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.

  20. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ULTRAFINE WC/Co CEMENTED CARBIDES WITH CUBIC BORON NITRIDE AND Cr₃C₂ ADDITIONS

    OpenAIRE

    Genrong Zhang; Haiyan Chen; Dong Lihua; Yin,; Li Kun

    2016-01-01

    This study investigates the microstructure and mechanical properties of ultrafine tungsten carbide and cobalt (WC/Co) cemented carbides with cubic boron nitride (CBN) and chromium carbide (Cr₃C₂) fabricated by a hot pressing sintering process. This study uses samples with 8 wt% Co content and 7.5 vol% CBN content, and with different Cr₃C₂ content ranging from 0 to 0.30 wt%. Based on the experimental results, Cr₃C₂ content has a significant influence on inhibiting abnormal grain growth and dec...

  1. Spectrographic determination of Si, Fe and Mn in nuclear grade boron carbide

    International Nuclear Information System (INIS)

    A spectrographic method is developed to determine Si, Fe and Mn in nuclear grade boron carbide. Boron carbide sample is ground to fine mesh in the presence of liquid N2 and mixed with pure conducting graphite powder in the ratio of 1:1 by weight. Ten milligrammes of the ground charge are loaded in the cavity of a U.C.C. 1991 shallow cup electrode (anode) and arced against a 1/8 inch dia. pointed graphite electrode (cathode) at 15 amp d.c. operated in oxygen atmosphere. Synthetic standards are also arced under the same conditions. The spectra are recorded on a 3.4 m JACO Ebert plane grating spectrograph with 30,000 l.p.i. grating in the wavelength region 2300-2900 A, first order. Si 2506.9 A, Fe 2598.4 A and Mn 2605.7 A lines are used as the analytical lines with BO band head at 2437.1 A as the internal standard line. Si and Fe are estimated in the concentration range, 200-5000 ppm and Mn is estimated in the range, 10-500 ppm. 3 figures, 2 tables, 3 refs. (author)

  2. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Science.gov (United States)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  3. Improved green-light-emitting pyrotechnic formulations based on tris(2,2,2-trinitroethyl)borate and boron carbide.

    Science.gov (United States)

    Klapötke, Thomas M; Krumm, Burkhard; Rusan, Magdalena; Sabatini, Jesse J

    2014-08-28

    Green-light-emitting pyrotechnic compositions based on tris(2,2,2-trinitroethyl)borate (TNEB) and boron carbide have been investigated. The best performing formulations were found to be insensitive to various ignition stimuli, and exhibited very high spectral purities and luminosities compared to previously reported green-light-emitting formulations.

  4. High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor

    Science.gov (United States)

    Hushur, Anwar; Manghnani, Murli H.; Werheit, Helmut; Dera, Przemyslaw; Williams, Quentin

    2016-02-01

    Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking. This is obtained from observations of transparency, which most rapidly increases around 55 GPa. Full visible optical transparency is approached at pressures of  >60 GPa indicating that the band gap reaches ~3.5 eV at high pressure, boron carbide is a wide-gap semiconductor. The reason is that the high concentration of structural defects controlling the electronic properties of boron carbide at ambient conditions initially decreases and finally vanishes at high pressures. The structural parameters and Raman-active phonons indicate a pressure-dependent phase transition in single-crystal natB4.3C boron carbide near 40 GPa, likely related to structural changes in the C-B-C chains, while the basic icosahedral structure appears to be less affected.

  5. High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor.

    Science.gov (United States)

    Hushur, Anwar; Manghnani, Murli H; Werheit, Helmut; Dera, Przemyslaw; Williams, Quentin

    2016-02-01

    Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking. This is obtained from observations of transparency, which most rapidly increases around 55 GPa. Full visible optical transparency is approached at pressures of  >60 GPa indicating that the band gap reaches ~3.5 eV; at high pressure, boron carbide is a wide-gap semiconductor. The reason is that the high concentration of structural defects controlling the electronic properties of boron carbide at ambient conditions initially decreases and finally vanishes at high pressures. The structural parameters and Raman-active phonons indicate a pressure-dependent phase transition in single-crystal (nat)B4.3C boron carbide near 40 GPa, likely related to structural changes in the C-B-C chains, while the basic icosahedral structure appears to be less affected.

  6. Detection of a leaking boron-carbide control rod in a TRIGA Mark I reactor

    International Nuclear Information System (INIS)

    During a routine quarterly inspection of the boron-carbide control rods of the Omaha Veterans Administration Hospital 18 kW Triga Mark I reactor, a pin hole leak was detected approximately 3 mm from the chamfered edge. The leak was found by observing bubbles when the rod was withdrawn from the reactor tank for visual observation, and could not be seen with the naked eye. This suggests that pin hole leaks could occur and not be visually detected in control rods and fuel elements examined underwater. A review of the rod calibrations showed that the leak had not caused a loss in rod worth. Slides will be presented showing the bubbles observed during the inspection, together with an unmagnified and magnified view of the pin hole. (author)

  7. Microstructural study of oxidation of carbon-rich amorphous boron carbide coating

    Institute of Scientific and Technical Information of China (English)

    Bin ZENG; Zu-de FENG; Si-wei LI; Yong-sheng LIU

    2008-01-01

    Carbon-rich amorphous boron carbide (BxC) coatings were annealed at 400℃, 700℃, 1000℃ and 1200℃ for 2 h in air atmosphere. The microstructure and composition of the as-deposited and annealed coat-ings were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), micro-Raman spectro-scopy and energy dispersive X-ray spectroscopy (EDS). All of the post-anneal characterizations demonstrated the ability of carbon-rich BxC coatings to protect the graphite substrate against oxidation. Different oxidation modes of the coatings were found at low temperature (400℃), moderate temperature (700℃) and high temper-ature (1000℃ and 1200℃). Finally, the feasibility of the application of carbon-rich BxC instead of pyrolytic car-bon (PyC) as a fiber/matrix interlayer in ceramics-matrix composites (CMCs) is discussed here.

  8. Lightweight graphene nanoplatelet/boron carbide composite with high EMI shielding effectiveness

    Science.gov (United States)

    Tan, Yongqiang; Luo, Heng; Zhang, Haibin; Zhou, Xiaosong; Peng, Shuming

    2016-03-01

    Lightweight graphene nanoplatelet (GNP)/boron carbide (B4C) composites were prepared and the effect of GNPs loading on the electromagnetic interference (EMI) shielding effectiveness (SE) has been evaluated in the X-band frequency range. Results have shown that the EMI SE of GNP/B4C composite increases with increasing the GNPs loading. An EMI SE as high as 37 ˜ 39 dB has been achieved in composite with 5 vol% GNPs. The high EMI SE is mainly attributed to the high electrical conductivity, high dielectric loss as well as multiple reflections by aligned GNPs inside the composite. The GNP/B4C composite is demonstrated to be promising candidate of high-temperature microwave EMI shielding material.

  9. Lightweight graphene nanoplatelet/boron carbide composite with high EMI shielding effectiveness

    Directory of Open Access Journals (Sweden)

    Yongqiang Tan

    2016-03-01

    Full Text Available Lightweight graphene nanoplatelet (GNP/boron carbide (B4C composites were prepared and the effect of GNPs loading on the electromagnetic interference (EMI shielding effectiveness (SE has been evaluated in the X-band frequency range. Results have shown that the EMI SE of GNP/B4C composite increases with increasing the GNPs loading. An EMI SE as high as 37 ∼ 39 dB has been achieved in composite with 5 vol% GNPs. The high EMI SE is mainly attributed to the high electrical conductivity, high dielectric loss as well as multiple reflections by aligned GNPs inside the composite. The GNP/B4C composite is demonstrated to be promising candidate of high-temperature microwave EMI shielding material.

  10. Enhanced mechanical properties of nanocrystalline boron carbide by nanoporosity and interface phases.

    Science.gov (United States)

    Madhav Reddy, K; Guo, J J; Shinoda, Y; Fujita, T; Hirata, A; Singh, J P; McCauley, J W; Chen, M W

    2012-01-01

    Ceramics typically have very high hardness, but low toughness and plasticity. Besides intrinsic brittleness associated with rigid covalent or ionic bonds, porosity and interface phases are the foremost characteristics that lead to their failure at low stress levels in a brittle manner. Here we show that, in contrast to the conventional wisdom that these features are adverse factors in mechanical properties of ceramics, the compression strength, plasticity and toughness of nanocrystalline boron carbide can be noticeably improved by introducing nanoporosity and weak amorphous carbon at grain boundaries. Transmission electron microscopy reveals that the unusual nanosize effect arises from the deformation-induced elimination of nanoporosity mediated by grain boundary sliding with the assistance of the soft grain boundary phases. This study has important implications in developing high-performance ceramics with ultrahigh strength and enhanced plasticity and toughness.

  11. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L‑1 (cubic SiC NWs) and 5–8000 μmoL L‑1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L‑1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  12. Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guoliang [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Abbott, Julia K.C.; Brasfield, John D. [Department of Chemistry, The University of Tennessee, Knoxville, TN 37996 (United States); Liu, Peizhi [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Dale, Alexis [Department of Chemistry, The University of Tennessee, Knoxville, TN 37996 (United States); Duscher, Gerd [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Rack, Philip D. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Feigerle, Charles S., E-mail: cfeigerl@tennessee.edu [Department of Chemistry, The University of Tennessee, Knoxville, TN 37996 (United States)

    2015-02-01

    Highlights: • Crystalline boron phosphide was grown on vicinal 4H (0 0 0 1)-SiC surfaces. • The microstructure evolution of defects generated at the interface was characterized by transmission electron microscopy. • The evolution of lattice distortion and strain are determined. - Abstract: Boron phosphide (BP) is a material of interest for development of a high-efficiency solid-state thermal neutron detector. For a thick film-based device, microstructure evolution is key to the engineering of material synthesis. Here, we report epitaxial BP films grown on silicon carbide with vicinal steps and provide a detailed analysis of the microstructure evolution and strain relief. The BP film is epitaxial in the near-interface region but deviates from epitaxial growth as the film develops. Defects such as coherent and incoherent twin boundaries, dislocation loops, stacking faults concentrate in the near-interface region and segment this region into small domains. The formation of defects in this region do not fully release the strain originated from the lattice mismatch. Large grains emerge above the near-interface region and grain boundaries become the main defects in the upper part of the BP film.

  13. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  14. Answer to professor H. Werheit's comment on the article "Is linear group X-Y-Z in boron carbide the weakest link in the structure?"

    Science.gov (United States)

    Konovalikhin, S. V.; Ponomarev, V. I.

    2016-07-01

    The author of the comment and the authors of the paper speak about different things. The paper considered the structure of a fragment of the boron carbide structure. The results of quantum-chemical calculations were compared with the structure of the analogous fragments of boron carbide single crystals and their derivatives. The author of the comment analyzed the structure of polycrystals only on the basis of their IR and Raman spectral studies.

  15. Design of boron carbide-shielded irradiation channel of the outer irradiation channel of the Ghana Research Reactor-1 using MCNP.

    Science.gov (United States)

    Abrefah, R G; Sogbadji, R B M; Ampomah-Amoako, E; Birikorang, S A; Odoi, H C; Nyarko, B J B

    2011-01-01

    The MCNP model for the Ghana Research Reactor-1 was redesigned to incorporate a boron carbide-shielded irradiation channel in one of the outer irradiation channels. Extensive investigations were made before arriving at the final design of only one boron carbide covered outer irradiation channel; as all the other designs that were considered did not give desirable results of neutronic performance. The concept of redesigning a new MCNP model, which has a boron carbide-shielded channel is to equip the Ghana Research Reactor-1 with the means of performing efficient epithermal neutron activation analysis. After the simulation, a comparison of the results from the original MCNP model for the Ghana Research Reactor-1 and the new redesigned model of the boron carbide shielded channel was made. The final effective criticality of the original MCNP model for the GHARR-1 was recorded as 1.00402 while that of the new boron carbide designed model was recorded as 1.00282. Also, a final prompt neutron lifetime of 1.5245 × 10(-4)s was recorded for the new boron carbide designed model while a value of 1.5571 × 10(-7)s was recorded for the original MCNP design of the GHARR-1.

  16. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  17. The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, Yuri, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 2/3 Akademicheskiy Ave. Tomsk, 634055 (Russian Federation); National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050 (Russian Federation); Tolkachev, Oleg, E-mail: ole.ts@mail.ru; Petyukevich, Maria, E-mail: petukevich@tpu.ru; Polisadova, Valentina, E-mail: polis@tpu.ru [National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050 (Russian Federation); Teresov, Anton, E-mail: tad514@sibmail.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 2/3 Akademicheskiy Ave. Tomsk, 634055 (Russian Federation); National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irina-ikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq., Tomsk, 634003 (Russian Federation)

    2016-01-15

    The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm{sup 2}, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

  18. Technology Research of Ultrafine Grinding Boron Carbide%碳化硼超细粉碎工艺研究

    Institute of Scientific and Technical Information of China (English)

    王圈库; 焦永峰

    2013-01-01

    碳化硼(B4C)是重要的超硬材料,B4C陶瓷是高性能的工程陶瓷材料,采用亚微米级超细粉体原料是制备碳化硼陶瓷良好性能的关键.本文采用砂磨工艺制备亚微米B4C超细粉体,对砂磨工艺的球料比、料水比和分散剂用量等工艺参数进行了考察,成功制备得到中位粒径D50小于0.6μm的碳化硼超细粉体,并用以制备得到了高致密度无压烧结碳化硼陶瓷.%Boron carbide (B4C) is an important super hard materials,and B4C ceramics is one kind of high performance engineering ceramics.Sub-micron B4C powder is the key to ensure good performance for ceramic materials.In this paper,sub-micron boron carbide powder was fabricated by attrition milling process,and the ball-feed ratio,feed-water ratio and the amount of dispersant were investigated.The boron carbide powder which grain size D50 is less than 0.6 μ m was prepared successful,and then high density pressure less sintering boron carbide ceramic was prepared.

  19. The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

    Science.gov (United States)

    Ivanov, Yuri; Tolkachev, Oleg; Petyukevich, Maria; Teresov, Anton; Ivanova, Olga; Ikonnikova, Irina; Polisadova, Valentina

    2016-01-01

    The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

  20. The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

    International Nuclear Information System (INIS)

    The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance

  1. Surface impurity removal from DIII-D graphite tiles by boron carbide grit blasting

    International Nuclear Information System (INIS)

    During the latter half of 1992, the DIII-D tokamak at General Atomics (GA) underwent several modifications of its interior. One of the major tasks involved the removal of accumulated metallic impurities from the surface of the graphite tiles used to line the plasma facing surfaces inside of the tokamak. Approximately 1500 graphite tiles and 100 boron nitride tiles from the tokamak were cleaned to remove the metallic impurities. The cleaning process consisted of several steps: the removed graphite tiles were permanently marked, surface blasted using boron carbide (B4C) grit media (approximately 37 μm. diam.), ultrasonically cleaned in ethanol to remove loose dust, and outgassed at 1000 degrees C. Tests were done using, graphite samples and different grit blaster settings to determine the optimum propellant and abrasive media pressures to remove a graphite layer approximately 40-50 μm deep and yet produce a reasonably smooth finish. EDX measurements revealed that the blasting technique reduced the surface Ni, Cr, and Fe impurity levels to those of virgin graphite. In addition to the surface impurity removal, tritium monitoring was performed throughout the cleaning process. A bubbler system was set up to monitor the tritium level in the exhaust gas from the grit blaster unit. Surface wipes were also performed on over 10% of the tiles. Typical surface tritium concentrations of the tiles were reduced from about 500 dpm/100 cm2 to less than 80 dpm/100 cm2 following the cleaning. This tile conditioning, and the installation of additional graphite tiles to cover a high fraction of the metallic plasma facing surfaces, has substantially reduced metallic impurities in the plasma discharges which has allowed rapid recovery from a seven-month machine opening and regimes of enhanced plasma energy confinement to be more readily obtained. Safety issues concerning blaster operator exposure to carcinogenic metals and radioactive tritium will also be addressed

  2. Optical constants of magnetron-sputtered boron carbide thin films from photoabsorption data in the range 30 to 770 eV.

    Science.gov (United States)

    Soufli, Regina; Aquila, Andrew L; Salmassi, Farhad; Fernández-Perea, Mónica; Gullikson, Eric M

    2008-09-01

    This work discusses the experimental determination of the optical constants (refractive index) of DC-magnetron-sputtered boron carbide films in the 30-770 eV photon energy range. Transmittance measurements of three boron carbide films with thicknesses of 54.2, 79.0, and 112.5 nm were performed for this purpose. These are believed to be the first published experimental data for the refractive index of boron carbide films in the photon energy range above 160 eV and for the near-edge x-ray absorption fine structure regions around the boron K (188 eV), carbon K (284.2 eV), and oxygen K (543.1 eV) absorption edges. The density, composition, surface chemistry, and morphology of the films were also investigated using Rutherford backscattering, x-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and extreme ultraviolet reflectance measurements.

  3. Improvements of Thermal, Mechanical, and Water-Resistance Properties of Polybenzoxazine/Boron Carbide Nanocomposites

    Science.gov (United States)

    Ramdani, Noureddine; Derradji, Mehdi; Wang, Jun; Mokhnache, El-Oualid; Liu, Wen-Bin

    2016-09-01

    Novel kinds of nanocomposites based on bisphenol A-aniline based polybenzoxazine matrix P(BA-a) and 0 wt.%-20 wt.% boron carbide (B4C) nanoparticles were produced and their properties were evaluated in terms of the nano-B4C content. The thermal conductivity of the P(BA-a) matrix was improved approximately three times from 0.18 W/m K to 0.86 W/m K at 20 wt.% nano-B4C loading, while its coefficient of thermal expansion (CTE) was deceased by 47% with the same nanofiller content. The microhardness properties were significantly improved by adding the B4C nanoparticles. At 20 wt.% of nano-B4C content, dynamic mechanical analysis (DMA) revealed a marked increase in the storage modulus and the glass transition temperature ( T g) of the nanocomposites, reaching 3.9 GPa and 204°C, respectively. Hot water uptake tests showed that the water-resistance of the polybenzoxazine matrix was increased by filling with nano-B4C nano-filler. The morphological analysis reflected that the improvements obtained in the mechanical and thermal properties are related to the uniform dispersion of the nano-B4C particles and their strong adhesion to the P(BA-a) matrix.

  4. Phase transitions of boron carbide: Pair interaction model of high carbon limit

    Science.gov (United States)

    Yao, Sanxi; Huhn, W. P.; Widom, M.

    2015-09-01

    Boron Carbide exhibits a broad composition range, implying a degree of intrinsic substitutional disorder. While the observed phase has rhombohedral symmetry (space group R 3 bar m), the enthalpy minimizing structure has lower, monoclinic, symmetry (space group Cm). The crystallographic primitive cell consists of a 12-atom icosahedron placed at the vertex of a rhombohedral lattice, together with a 3-atom chain along the 3-fold axis. In the limit of high carbon content, approaching 20% carbon, the icosahedra are usually of type B11 Cp, where the p indicates the carbon resides on a polar site, while the chains are of type C-B-C. We establish an atomic interaction model for this composition limit, fit to density functional theory total energies, that allows us to investigate the substitutional disorder using Monte Carlo simulations augmented by multiple histogram analysis. We find that the low temperature monoclinic Cm structure disorders through a pair of phase transitions, first via a 3-state Potts-like transition to space group R3m, then via an Ising-like transition to the experimentally observed R 3 bar m symmetry. The R3m and Cm phases are electrically polarized, while the high temperature R 3 bar m phase is nonpolar.

  5. Effect of mechanical and thermal loading on boron carbide particles reinforced Al-6061 alloy

    Energy Technology Data Exchange (ETDEWEB)

    Manjunatha, B., E-mail: manjunathab.ait@gmail.com [Department of Mechanical Engineering, Acharya Institute of Technology, Soldevanahalli, Hesaraghatta Main Road, Bangalore 560090 (India); Niranjan, H.B., E-mail: girija_hb@hotmail.com [Department of Mechanical Engineering, Sambhram Institute of Technology, Lakshmipura Cross, MS Palya, Jalahalli East, Bangalore 560097 (India); Satyanarayana, K.G., E-mail: gundsat42@hotmail.com [Poornaprajna Institute of Scientific Research (PPISR), Sy. No. 167, Poornaprajnapura, Bidalur Post, Devanahalli, Bangalore 562110, Karnataka (India)

    2015-04-24

    Metal Matrix Composites (MMC) considered as one of the ‘advanced materials’ have evoked growing interest during the last three decades due to their high performance and applications in strategic sectors. These composites exhibit unique and attractive properties over the monolithic alloys, but suffer from low ductility, which makes them not so attractive for some of the applications where high toughness is one of the design criteria. This limitation of MMCs has been overcome by resorting to various treatments such as mechanical and thermal loading. Considering very limited reports available on Al alloy reinforced with boron carbide (B{sub 4}C) particles, this paper presents (i) preparation of Al-6061 alloy reinforced with 1.5–10 wt% B{sub 4}C, (ii) subjecting them to mechanical and thermal treatments and (iii) characterization of all the above samples. Specific ultimate tensile strength and hardness of all the composites were higher than those of matrix. Also, these values increased with increasing amount of particles, with composites containing 8 wt% B{sub 4}C showing the maximum values in all the three conditions. These observations are supported by the uniform distribution of particles in the matrix as observed in their microstructure.

  6. Improvements of Thermal, Mechanical, and Water-Resistance Properties of Polybenzoxazine/Boron Carbide Nanocomposites

    Science.gov (United States)

    Ramdani, Noureddine; Derradji, Mehdi; Wang, Jun; Mokhnache, El-Oualid; Liu, Wen-Bin

    2016-07-01

    Novel kinds of nanocomposites based on bisphenol A-aniline based polybenzoxazine matrix P(BA-a) and 0 wt.%-20 wt.% boron carbide (B4C) nanoparticles were produced and their properties were evaluated in terms of the nano-B4C content. The thermal conductivity of the P(BA-a) matrix was improved approximately three times from 0.18 W/m K to 0.86 W/m K at 20 wt.% nano-B4C loading, while its coefficient of thermal expansion (CTE) was deceased by 47% with the same nanofiller content. The microhardness properties were significantly improved by adding the B4C nanoparticles. At 20 wt.% of nano-B4C content, dynamic mechanical analysis (DMA) revealed a marked increase in the storage modulus and the glass transition temperature (T g) of the nanocomposites, reaching 3.9 GPa and 204°C, respectively. Hot water uptake tests showed that the water-resistance of the polybenzoxazine matrix was increased by filling with nano-B4C nano-filler. The morphological analysis reflected that the improvements obtained in the mechanical and thermal properties are related to the uniform dispersion of the nano-B4C particles and their strong adhesion to the P(BA-a) matrix.

  7. Enhanced deposition of cubic boron nitride films on roughened silicon and tungsten carbide-cobalt surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Teii, K., E-mail: teii@asem.kyushu-u.ac.j [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Hori, T. [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, S. [Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016 (Japan)

    2011-01-03

    We report the influence of substrate surface roughness on cubic boron nitride (cBN) film deposition under low-energy ion bombardment in an inductively coupled plasma. Silicon and cemented tungsten carbide-cobalt (WC-Co) surfaces are roughened by low-energy ion-assisted etching in a hydrogen plasma, followed by deposition in a fluorine-containing plasma. Infrared absorption coefficients are measured to be 22,000 cm{sup -1} and 17,000 cm{sup -1} for sp{sup 2}-bonded BN and cBN phases, respectively, for our films. For the silicon substrates, the film growth rate and the cBN content in the film increase with increasing the surface roughness, while the amount of sp{sup 2}BN phase in the film shows only a small increase. A larger surface roughness of the substrate results in a smaller contact angle of water, indicating that a higher surface free energy of the substrate contributes to enhancing growth of the cBN film. For the WC-Co substrates, the film growth rate and the cBN content in the film increase similarly by roughening the surface.

  8. Direct deposition of cubic boron nitride films on tungsten carbide-cobalt.

    Science.gov (United States)

    Teii, Kungen; Matsumoto, Seiichiro

    2012-10-24

    Thick cubic boron nitride (cBN) films in micrometer-scale are deposited on tungsten carbide-cobalt (WC-Co) substrates without adhesion interlayers by inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD) using the chemistry of fluorine. The residual film stress is reduced because of very low ion-impact energies (a few eV to ∼25 eV) controlled by the plasma sheath potential. Two types of substrate pretreatment are used successively; the removal of surface Co binder using an acid solution suppresses the catalytic effect of Co and triggers cBN formation, and the surface roughening using mechanical scratching and hydrogen plasma etching increases both the in-depth cBN fraction and deposition rate. The substrate surface condition is evaluated by the wettability of the probe liquids with different polarities and quantified by the apparent surface free energy calculated from the contact angle. The surface roughening enhances the compatibility in energy between the cBN and substrate, which are bridged by the interfacial sp(2)-bonded hexagonal BN buffer layer, and then, the cBN overlayer is nucleated and evolved easier. PMID:22950830

  9. Enhanced deposition of cubic boron nitride films on roughened silicon and tungsten carbide-cobalt surfaces

    International Nuclear Information System (INIS)

    We report the influence of substrate surface roughness on cubic boron nitride (cBN) film deposition under low-energy ion bombardment in an inductively coupled plasma. Silicon and cemented tungsten carbide-cobalt (WC-Co) surfaces are roughened by low-energy ion-assisted etching in a hydrogen plasma, followed by deposition in a fluorine-containing plasma. Infrared absorption coefficients are measured to be 22,000 cm-1 and 17,000 cm-1 for sp2-bonded BN and cBN phases, respectively, for our films. For the silicon substrates, the film growth rate and the cBN content in the film increase with increasing the surface roughness, while the amount of sp2BN phase in the film shows only a small increase. A larger surface roughness of the substrate results in a smaller contact angle of water, indicating that a higher surface free energy of the substrate contributes to enhancing growth of the cBN film. For the WC-Co substrates, the film growth rate and the cBN content in the film increase similarly by roughening the surface.

  10. Non-catalytic facile synthesis of superhard phase of boron carbide (B13C2) nanoflakes and nanoparticles.

    Science.gov (United States)

    Xie, Sky Shumao; Su, Liap Tat; Guo, Jun; Vasylkiv, Oleg; Borodianska, Hanna; Xi, Zhu; Krishnan, Gireesh M; Su, Haibin; Tokl, Alfred I Y

    2012-01-01

    Boron Carbide is one the hardest and lightest material that is also relatively easier to synthesis as compared to other superhard ceramics like cubic boron nitride and diamond. However, the brittle nature of monolithic advanced ceramics material hinders its use in various engineering applications. Thus, strategies that can toughen the material are of fundamental and technological importance. One approach is to use nanostructure materials as building blocks, and organize them into a complex hierarchical structure, which could potentially enhance its mechanical properties to exceed that of the monolithic form. In this paper, we demonstrated a simple approach to synthesize one- and two-dimension nanostructure boron carbide by simply changing the mixing ratio of the initial compound to influence the saturation condition of the process at a relatively low temperature of 1500 degrees C with no catalyst involved in the growing process. Characterization of the resulting nano-structures shows B13C2, which is a superhard phase of boron carbide as its hardness is almost twice as hard as the commonly known B4C. Using ab-initio density functional theory study on the elastic properties of both B12C3 and B13C2, the high hardness of B13C2 is consistent to our calculation results, where bulk modulus of B13C2 is higher than that of B4C. High resolution transmission electron microscopy of the nanoflakes also reveals high density of twinning defects which could potentially inhibit the crack propagation, leading to toughening of the materials.

  11. Low temperature synthesis of boron carbide micropowder%碳化硼微粉的低温合成

    Institute of Scientific and Technical Information of China (English)

    张云霏; 仲剑初; 王洪志

    2011-01-01

    以聚乙烯醇和硼酸为原料,首先合成聚乙烯醇硼酸酯前驱物凝胶,然后将前驱物热解及碳热还原制备碳化硼粉末.考察了聚乙烯醇与硼酸的物质的量比,前驱物热解温度,碳热还原温度以及还原时间等因素对碳化硼合成的影响.采用IR、化学分析、XRD、离心粒度分析、SEM等方法对中间物及产物进行了表征,确定了中间物及产物的组成、物相、粒度分布及形貌.研究结果表明:前驱物合成的适宜原料配比是n(聚乙烯醇)∶n(硼酸)=4∶1;前驱物在600℃下热解2h,在1 300℃下碳热还原2h,得到粒径为10 μm左右的碳化硼微粉.%Polyvinyl borate gel was prepared with polyvinyl alcohol (PVA) and boron acid as raw materials, which was employed as precursor for preparing boron carbide and then it was pyrolyzed and reduced to form boron carbide powder by carbonthermal process. Effects of amount-of-substance ratio of polyvinyl alcohol to boron acid, pyrolyzed temperature of the precursor, carbonthermal reduction temperature,and reduction time of pyrolyzed precursor on boron carbide synthesis were respectively investigated. Intermediate and product were respectively characterized by FT-IR,chemical composition,XRD, SEM, and particle size analysis etc.. Results indicated that the optimum raw material mix ratio for precursor polyvinyl borate was n[ PVA) : n( boron acid) =4: 1 ;B4C powder with a primary particle size of 10 ftm could be obtained when the precursor was pyrolyzed at 600 °C for 2 h,and then treated at 1300 ℃ for 2 h.

  12. Magnetism of single-walled silicon carbide nanotubes doped by boron, nitrogen and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Maghnaoui, Ahmed [Laboratoire de Physique, Universite du 08 mai 45, BP 401, 24000 Guelma (Algeria); Boufelfel, Ahmed, E-mail: ahboufelfel@gmail.com [Laboratoire de Physique, Universite du 08 mai 45, BP 401, 24000 Guelma (Algeria)

    2012-09-15

    We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X{sub Si}, or the carbon atom X{sub C}, in the unit cell. We found that in the case of one atom B - SiCNT replacing a carbon atom position annotated by B{sub C} exhibits a magnetic moment of 1 {mu}{sub B}/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B{sub Si}), induce a magnetic moment of 0.46 {mu}{sub B}/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N{sub C}) and (N{sub Si}) each case induce a magnetic moment of 1 {mu}{sub B}/cell in armchair (6,6), while N{sub Si} give rise to 0.75 {mu}{sub B}/cell in zigzag (10,0) and no magnetic moment for N{sub C}. In contrast the case of O{sub C} and O{sub Si} did not produce any net magnetic moment in both zigzag and armchair geometries. - Highlights: Black-Right-Pointing-Pointer Calculation scheme the one implemented in the SIESTA. Black-Right-Pointing-Pointer Materials studied SiCNT, B - SiCNT, N - SiCNT and O - SiCNT. Black-Right-Pointing-Pointer Magnetism in single wall SiCNTs when one atom of C or Si is replaced by B or N zigzag (10,0) and armchair (6,6).

  13. Characterization of boron carbide particulate reinforced in situ copper surface composites synthesized using friction stir processing

    Energy Technology Data Exchange (ETDEWEB)

    Sathiskumar, R., E-mail: sathiscit2011@gmail.com [Department of Mechanical Engineering, Coimbatore Institute of Technology, Coimbatore, 641 014 Tamil Nadu (India); Murugan, N., E-mail: murugan@cit.edu.in [Department of Mechanical Engineering, Coimbatore Institute of Technology, Coimbatore, 641 014 Tamil Nadu (India); Dinaharan, I., E-mail: dinaweld2009@gmail.com [Department of Mechanical Engineering, V V College of Engineering, Tisaiyanvilai, 627 657 Tamil Nadu (India); Vijay, S.J., E-mail: vijayjoseph@karunya.edu [Centre for Research in Metallurgy (CRM), School of Mechanical Sciences, Karunya University, Coimbatore, 641 114 Tamil Nadu (India)

    2013-10-15

    Friction stir processing has evolved as a novel solid state technique to fabricate surface composites. The objective of this work is to apply the friction stir processing technique to fabricate boron carbide particulate reinforced copper surface composites and investigate the effect of B{sub 4}C particles and its volume fraction on microstructure and sliding wear behavior of the same. A groove was prepared on 6 mm thick copper plates and packed with B{sub 4}C particles. The dimensions of the groove was varied to result in five different volume fractions of B{sub 4}C particles (0, 6, 12, 18 and 24 vol.%). A single pass friction stir processing was done using a tool rotational speed of 1000 rpm, travel speed of 40 mm/min and an axial force of 10 kN. Metallurgical characterization of the Cu/B{sub 4}C surface composites was carried out using optical microscope and scanning electron microscope. The sliding wear behavior was evaluated using a pin-on-disk apparatus. Results indicated that the B{sub 4}C particles significantly influenced the area, dispersion, grain size, microhardness and sliding wear behavior of the Cu/B{sub 4}C surface composites. When the volume fraction of B{sub 4}C was increased, the wear mode changed from microcutting to abrasive wear and wear debris was found to be finer. Highlights: • Fabrication of Cu/B{sub 4}C surface composite by friction stir processing • Analyzing the effect of B{sub 4}C particles on the properties of Cu/B4C surface composite • Increased volume fraction of B{sub 4}C particles reduced the area of surface composite. • Increased volume fraction of B{sub 4}C particles enhanced the microhardness and wear rate. • B{sub 4}C particles altered the wear mode from microcutting to abrasive.

  14. New insights into the enigma of boron carbide inverse molecular behavior

    Energy Technology Data Exchange (ETDEWEB)

    Dera, Przemyslaw, E-mail: pdera@hawaii.edu [Hawaii Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawaii at Manoa, 1680 East West Road, POST Building, Honolulu, HI 96822 (United States); Manghnani, Murli H.; Hushur, Anwar; Hu, Yi [Hawaii Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawaii at Manoa, 1680 East West Road, POST Building, Honolulu, HI 96822 (United States); Tkachev, Sergey [Center for Advanced Radiation Sources, The University of Chicago, Argonne National Laboratory, 9700 S. Cass Avenue, Building 434, Argonne, IL 60439 (United States)

    2014-07-01

    Equation of state and compression mechanism of nearly stoichiometric boron carbide B{sub 4}C were investigated using diamond anvil cell single crystal synchrotron X-ray diffraction technique up to a maximum quasi-hydrostatic pressure of 74.0(1) GPa in neon pressure transmitting medium at ambient temperature. No signatures of structural phase transitions were observed on compression. Crystal structure refinements indicate that the icosahedral units are less compressible (13% volume reduction at 60 GPa) than the unit cell volume (18% volume reduction at 60 GPa), contrary to expectations based on the inverse molecular behavior hypothesis, but consistent with spectroscopic evidence and first principles calculations. The high-pressure crystallographic refinements reveal that the nature of the chemical bonds (two, versus three centered character) has marginal effect on the bond compressibility and the compression of the crystal is mainly governed by the force transfer between the rigid icosahedral structural units. - Graphical abstract: Single crystal measurements of equation of state and compression mechanism of B{sub 4}C show that the icosahedral units are less compressibe than the unit cell volume, despite the threei-ceneterd nature of some icosahedral bonds. - Highlights: • Equation of state and compression mechanism of B{sub 4}C were measured to 75 GPa. • No signatures of structural phase transitions were observed on compression. • Icosahedral units are less compressibe than the unit cell volume. • The nature of the chemical bonds has mariginal effect on the bond compressibility. • The compression is governed by force transfer between the rigid icosahedra.

  15. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ULTRAFINE WC/Co CEMENTED CARBIDES WITH CUBIC BORON NITRIDE AND Cr₃C₂ ADDITIONS

    Directory of Open Access Journals (Sweden)

    Genrong Zhang

    2016-03-01

    Full Text Available This study investigates the microstructure and mechanical properties of ultrafine tungsten carbide and cobalt (WC/Co cemented carbides with cubic boron nitride (CBN and chromium carbide (Cr₃C₂ fabricated by a hot pressing sintering process. This study uses samples with 8 wt% Co content and 7.5 vol% CBN content, and with different Cr₃C₂ content ranging from 0 to 0.30 wt%. Based on the experimental results, Cr₃C₂ content has a significant influence on inhibiting abnormal grain growth and decreasing grain size in cemented carbides. Near-full densification is possible when CBN-WC/Co with 0.25 wt% Cr₃C₂ is sintered at 1350°C and 20 MPa; the resulting material possesses optimal mechanical properties and density, with an acceptable Vickers hardness of 19.20 GPa, fracture toughness of 8.47 MPa.m1/2 and flexural strength of 564 MPa.u̇ Å k⃗

  16. Modification of the titanium alloy surface in electroexplosive alloying with boron carbide and subsequent electron-beam treatment

    International Nuclear Information System (INIS)

    The modification of the VT6 titanium alloy surface in electroexplosion alloying with plasma being formed in titanium foil with a weighed powder of boron carbide with subsequent irradiation by a pulsed electron beam has been carried out. An electroexplosive alloying zone of a thickness up to 50 μm with a gradient structure is found to form. The subsequent electron-beam treatment of the alloying zone results in smoothing of the alloying surface and is accompanied by the formation of the multilayer structure with alternating layers of various alloying degree at a depth of 30 μm

  17. Atomic structure of icosahedral B4C boron carbide from a first principles analysis of NMR spectra.

    Science.gov (United States)

    Mauri, F; Vast, N; Pickard, C J

    2001-08-20

    Density functional theory is demonstrated to reproduce the 13C and 11B NMR chemical shifts of icosahedral boron carbides with sufficient accuracy to extract previously unresolved structural information from experimental NMR spectra. B4C can be viewed as an arrangement of 3-atom linear chains and 12-atom icosahedra. According to our results, all the chains have a CBC structure. Most of the icosahedra have a B11C structure with the C atom placed in a polar site, and a few percent have a B (12) structure or a B10C2 structure with the two C atoms placed in two antipodal polar sites.

  18. Modification of the titanium alloy surface in electroexplosive alloying with boron carbide and subsequent electron-beam treatment

    Science.gov (United States)

    Gromov, Victor E.; Budovskikh, Evgeniy A.; Ivanov, Yurii F.; Bashchenko, Lyudmila P.; Wang, Xinli; Kobzareva, Tatyana Yu.; Semin, Alexander P.

    2015-10-01

    The modification of the VT6 titanium alloy surface in electroexplosion alloying with plasma being formed in titanium foil with a weighed powder of boron carbide with subsequent irradiation by a pulsed electron beam has been carried out. An electroexplosive alloying zone of a thickness up to 50 μm with a gradient structure is found to form. The subsequent electron-beam treatment of the alloying zone results in smoothing of the alloying surface and is accompanied by the formation of the multilayer structure with alternating layers of various alloying degree at a depth of 30 μm.

  19. Modification of the titanium alloy surface in electroexplosive alloying with boron carbide and subsequent electron-beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gromov, Victor E., E-mail: gromov@physics.sibsiu.ru; Budovskikh, Evgeniy A., E-mail: budovskikh-ea@physics.sibsiu.ru; Bashchenko, Lyudmila P., E-mail: gromov@physics.sibsiu.ru; Kobzareva, Tatyana Yu., E-mail: gromov@physics.sibsiu.ru; Semin, Alexander P., E-mail: gromov@physics.sibsiu.ru [Siberian State Industrial University, Novokuznetsk, 654007 (Russian Federation); Ivanov, Yurii F., E-mail: yufi55@mail.ru [Institute of High Current Electronics SB RAS, Tomsk, 634055 (Russian Federation); National Research Tomsk State University, Tomsk, 634050 (Russian Federation); Wang, Xinli, E-mail: wangxl520@hotmail.com [Northeastern University, Liaoning, Shenyang 110819 China (China)

    2015-10-27

    The modification of the VT6 titanium alloy surface in electroexplosion alloying with plasma being formed in titanium foil with a weighed powder of boron carbide with subsequent irradiation by a pulsed electron beam has been carried out. An electroexplosive alloying zone of a thickness up to 50 μm with a gradient structure is found to form. The subsequent electron-beam treatment of the alloying zone results in smoothing of the alloying surface and is accompanied by the formation of the multilayer structure with alternating layers of various alloying degree at a depth of 30 μm.

  20. Boron carbide, B13-xC2-y (x = 0.12, y = 0.01

    Directory of Open Access Journals (Sweden)

    Oksana Sologub

    2012-08-01

    Full Text Available Boron carbide phases exist over a widely varying compositional range B12+xC3-x (0.06 < x < 1.7. One idealized structure corresponds to the B13C2 composition (space group R-3m and contains one icosahedral B12 unit and one linear C—B—C chain. The B12 units are composed of crystallographically distinct B atoms BP (polar, B1 and BEq (equatorial, B2. Boron icosahedra are interconnected by C atoms via their BEq atoms, forming layers parallel to (001, while the B12 units of the adjacent layers are linked through intericosahedral BP—BP bonds. The unique B atom (BC connects the two C atoms of adjacent layers, forming a C—B—C chain along [001]. Depending on the carbon concentration, the carbon and BP sites exhibit mixed B/C occupancies to varying degrees; besides, the BC site shows partial occupancy. The decrease in carbon content was reported to be realized via an increasing number of chainless unit cells. On the basis of X-ray single-crystal refinement, we have concluded that the unit cell of the given boron-rich crystal contains following structural units: [B12] and [B11C] icosahedra (about 96 and 4%, respectively and C—B—C chains (87%. Besides, there is a fraction of unit cells (13% with the B atom located against the triangular face of a neighboring icosahedron formed by BEq (B2 thus rendering the formula B0.87(B0.98C0.0212(B0.13C0.872 for the current boron carbide crystal.

  1. Mechanical Behaviour ofAl2014 Reinforced with Boron Carbide and Short Basalt Fiber Based Hybrid Composites

    Directory of Open Access Journals (Sweden)

    Ranganatha S R

    2016-09-01

    Full Text Available The present study was aimed at evaluating the effect of short Basalt Fiber and B4Con hardness and impact strength of Al 2014 Composites. These AMCs with individual and multiple reinforcement (hybrid MMCs are finding increased applications in aerospace, automobile, space, underwater and transportation applications. An effort is made to enhance the Hardness and Impact properties of AMCs by reinforcing Al2014 matrix with Varying Proportion of Short basalt fiber and Boron carbide by stir casting method. Aluminum alloy matrix varying proportions of boron carbide particulates and Short Basalt fibers were fabricated. The microstructure,hardness and impact strength properties of the fabricated AMCs were analyzed. The optical microstructure study revealed the homogeneous dispersion of B4C particles and Short Basalt fiber in the matrix. Based on the results obtained from the Hardness and Impact of the metal matrix composites it is observed that, the hardness and impact strength increases with increase in the amount of reinforcement‘s.

  2. Comparisons of particles thermal behavior between Fe-base alloy and boron carbide during plasma transferred-arc powder surfacing

    Institute of Scientific and Technical Information of China (English)

    王惜宝

    2003-01-01

    Comparisons of particle's thermal behavior between Fe-base alloy and boron carbide in plasma transferred-arc (PTA) space was made based on theoretical evaluation results in this article. It was found that most of the Fe base particles would be fully melted while they transporting through the central plasma field with 200 A surfacing currents. And the particles with a diameter less than 0.5×10-4 m might be fully evaporated. However, for the boron carbide (B4C) particles, only the one with a diameter less than 0.5×10-4 m could be melted in the same PTA space. Most of B4C particles are only preheated at its solid state when they were fed through the central field of PTA plasma when the surfacing current is equal to or less than 200 A. When the arc current was smaller than100 A, only the particles smaller than 0.5×10-4 m could be melted in the PTA space for the Fe-base alloy. Almost none of the discussed B4C particles could be melted in the 100 A PTA space.

  3. Effect of sintering temperature and boron carbide content on the wear behavior of hot pressed diamond cutting segments

    Directory of Open Access Journals (Sweden)

    Islak S.

    2015-01-01

    Full Text Available The aim of this study was to investigate the effect of sintering temperature and boron carbide content on wear behavior of diamond cutting segments. For this purpose, the segments contained 2, 5 and 10 wt.% B4C were prepared by hot pressing process carried out under a pressure of 35 MPa, at 600, 650 and 700 °C for 3 minutes. The transverse rupture strength (TRS of the segments was assessed using a three-point bending test. Ankara andesite stone was cut to examine the wear behavior of segments with boron carbide. Microstructure, surfaces of wear and fracture of segments were determined by scanning electron microscopy (SEM-EDS, and X-ray diffraction (XRD analysis. As a result, the wear rate decreased significantly in the 0-5 wt.% B4C contents, while it increased in the 5-10 wt.% B4C contents. With increase in sintering temperature, the wear rate decreased due to the hard matrix.

  4. Friction stir surfacing of cast A356 aluminium–silicon alloy with boron carbide and molybdenum disulphide powders

    Directory of Open Access Journals (Sweden)

    R. Srinivasu

    2015-06-01

    Full Text Available Good castability and high strength properties of Al–Si alloys are useful in defence applications like torpedoes, manufacture of Missile bodies, and parts of automobile such as engine cylinders and pistons. Poor wear resistance of the alloys is major limitation for their use. Friction stir processing (FSP is a recognized surfacing technique as it overcomes the problems of fusion route surface modification methods. Keeping in view of the requirement of improving wear resistance of cast aluminium–silicon alloy, friction stir processing was attempted for surface modification with boron carbide (B4C and molybdenum disulfide (MoS2 powders. Metallography, micro compositional analysis, hardness and pin-on-disc wear testing were used for characterizing the surface composite coating. Microscopic study revealed breaking of coarse silicon needles and uniformly distributed carbides in the A356 alloy matrix after FSP. Improvement and uniformity in hardness was obtained in surface composite layer. Higher wear resistance was achieved in friction stir processed coating with carbide powders. Addition of solid lubricant MoS2 powder was found to improve wear resistance of the base metal significantly.

  5. Research Progress in Fabrication of Boron Carbide Thin Film%碳化硼薄膜制备的研究进展

    Institute of Scientific and Technical Information of China (English)

    范强; 廖志君; 伍登学

    2008-01-01

    The major properties of boron carbide and preparation methods of boron carbide thin film are reviewed.The advantages and important deposition parameters of these methods including DC/RF magnetron sputtering,ion beam evaporation and chemical vapor deposition are discussed,and the measures of improving the performances of boron carbide thin film are pointed out.It is evident from this review that intensive research still remains to be done and how to prepare the homogeneous boron carbide thin films with higher density,higher film-substrate adhesion and lower internal stress is the key study in the future.%综述了碳化硼材料的主要性能和制备碳化硼薄膜的主要方法,讨论了包括磁控溅射、离子束沉积和化学气相沉积等制备方法的优点及重要工艺参数,并就各方法指出了提高薄膜性能的主要措施,指出制备出更均匀、致密的碳化硼薄膜,提高薄膜与基体间的结合力,降低薄膜应力仍是今后研究的重点.

  6. Deterioration of yttria-stabilized zirconia by boron carbide alone or mixed with metallic or oxidized Fe, Cr, Zr mixtures

    Energy Technology Data Exchange (ETDEWEB)

    De Bremaecker, A., E-mail: adbremae@sckcen.be [Belgian Nuclear Research Center (SCK-CEN), NMS, Mol (Belgium); Ayrault, L., E-mail: laurent.ayrault@cea.fr [Institut de Radio-Protection et Sûreté Nucléaire/DPAM/SEMIC, Bât 702, CEN de Cadarache BP3, F-13115 Saint-Paul-lez-Durance (France); Clément, B. [Institut de Radio-Protection et Sûreté Nucléaire/DPAM/SEMIC, Bât 702, CEN de Cadarache BP3, F-13115 Saint-Paul-lez-Durance (France)

    2014-08-01

    In the frame of severe accident conditions (PHEBUS FPT3 test), different experiments were carried out on the interactions of 20% yttria-stabilized zirconia (YSZ) and 20% ceria-stab zirconia with boron carbide or its oxidation products (B{sub 2}O{sub 3}): either tests under steam between 1230° and 1700 °C with B{sub 4}C alone or B{sub 4}C mixed with metals, either tests under Ar with boron oxide present in a mixture of iron and chromium oxides. In all cases an interaction was observed with formation of intergranular yttrium borate. At 1700 °C boron oxide is able to “pump out” the Y stabiliser from the YSZ grains but also some trace elements (Ca and Al) and to form a eutectic containing YBO{sub 3} and yttrium calcium oxy-borate (YCOB). At the same time a substantial swelling (“bloating”) of the zirconia happens, qualitatively similar to the foaming of irradiated fuel in contact with a Zr-melt. In all samples the lowering of the Y (or Ce)-content in the YSZ grains is so sharp that in the interaction layers zirconia is no longer stabilized. This is important when YSZ is envisaged as simulant of UO{sub 2} or as inert matrix for Am-transmutation.

  7. Deterioration of yttria-stabilized zirconia by boron carbide alone or mixed with metallic or oxidized Fe, Cr, Zr mixtures

    Science.gov (United States)

    De Bremaecker, A.; Ayrault, L.; Clément, B.

    2014-08-01

    In the frame of severe accident conditions (PHEBUS FPT3 test), different experiments were carried out on the interactions of 20% yttria-stabilized zirconia (YSZ) and 20% ceria-stab zirconia with boron carbide or its oxidation products (B2O3): either tests under steam between 1230° and 1700 °C with B4C alone or B4C mixed with metals, either tests under Ar with boron oxide present in a mixture of iron and chromium oxides. In all cases an interaction was observed with formation of intergranular yttrium borate. At 1700 °C boron oxide is able to “pump out” the Y stabiliser from the YSZ grains but also some trace elements (Ca and Al) and to form a eutectic containing YBO3 and yttrium calcium oxy-borate (YCOB). At the same time a substantial swelling (“bloating”) of the zirconia happens, qualitatively similar to the foaming of irradiated fuel in contact with a Zr-melt. In all samples the lowering of the Y (or Ce)-content in the YSZ grains is so sharp that in the interaction layers zirconia is no longer stabilized. This is important when YSZ is envisaged as simulant of UO2 or as inert matrix for Am-transmutation.

  8. Coating on steel ST-37 type with nano powder pack of boron carbide

    International Nuclear Information System (INIS)

    Steel ST-37 is a material widely used in industry. The quality of steel ST-37 can be improved by means of surface coating. At present the development of the technology shows the tendency toward nanoscience and nanotechnology that can be applied to various fields, among others energy, industry, medicine, information technology and communication as well as food necessitated by people at competitive selling prices. The steps in powder pack boronizing include: Pre-treatment, powder preparation, boronizing agent preparation, container preparation, boronizing process, metallography, hardness testing and corrosion testing. From the study, it is concluded as follows. The mechanism of boronizing process is divided into three stages, which are the boride compound formation stage, the diffusion stage, and the grain growth and orientation stage. Carbon in B4C on boronizing process does not diffuse into the substrate. The formation of boride compound begins to occur at a temperature of 600 °C, the diffusion process at 700 °C, and the grain growth and orientation at 800 °C. The hardness of boron coating reaches a value of 1115 VHN. Coating by boronizing process shows corrosion resistance in 10% HCl. (author)

  9. Photons transport through ultra-high molecular weight polyethylene based composite containing tungsten and boron carbide fillers

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, S.M. [National Research Center “Kurchatov Institute”, Moscow 123182 (Russian Federation); Kuznetsov, S.A. [Russian State Technological University “MATI”, Moscow 121552 (Russian Federation); Volkov, A.E.; Terekhin, P.N.; Dmitriev, S.V. [National Research Center “Kurchatov Institute”, Moscow 123182 (Russian Federation); Tcherdyntsev, V.V.; Gorshenkov, M.V. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Boykov, A.A., E-mail: kink03@gmail.com [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation)

    2014-02-15

    Highlights: • The developed method for predicting X-ray properties of the polymer. • Higher content of the fillers results in an increase of mechanical properties. • X-ray defensive properties of the samples were investigated experimentally. -- Abstract: Polymers are a base for creating of composite materials with high mechanical and chemical properties. Using the heavy metals as filler in these composites can give them X-ray protective properties. These materials have high deactivation rates and can be used to create Personal Protective Equipment (PPE) used in aggressive environments. It was proposed a model for calculation of X-ray protection properties of the polymer-based nanocomposite materials with ultra-high molecular weight polyethylene (UHMWPE) matrix, filled with tungsten and boron carbide particles. X-ray protective properties were calculated in a wide range of filler content using the developed model. Results of calculations allow selecting most effective compounds of X-ray protective UHMWPE based composites.

  10. Boron carbide: Consistency of components, lattice parameters, fine structure and chemical composition makes the complex structure reasonable

    Science.gov (United States)

    Werheit, Helmut

    2016-10-01

    The complex, highly distorted structure of boron carbide is composed of B12 and B11C icosahedra and CBC, CBB and B□B linear elements, whose concentration depends on the chemical composition each. These concentrations are shown to be consistent with lattice parameters, fine structure data and chemical composition. The respective impacts on lattice parameters are estimated and discussed. Considering the contributions of the different structural components to the energy of the overall structure makes the structure and its variation within the homogeneity range reasonable; in particular that of B4.3C representing the carbon-rich limit of the homogeneity range. Replacing in B4.3C virtually the B□B components by CBC yields the hypothetical moderately distorted B4.0C (structure formula (B11C)CBC). The reduction of lattice parameters related is compatible with recently reported uncommonly prepared single crystals, whose compositions deviate from B4.3C.

  11. Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic

    Directory of Open Access Journals (Sweden)

    John D. Clayton

    2014-07-01

    Full Text Available A nonlinear continuum phase field theory is developed to describe amorphization of crystalline elastic solids under shear and/or pressure loading. An order parameter describes the local degree of crystallinity. Elastic coefficients can depend on the order parameter, inelastic volume change may accompany the transition from crystal to amorphous phase, and transitional regions parallel to bands of amorphous material are penalized by interfacial surface energy. Analytical and simple numerical solutions are obtained for an idealized isotropic version of the general theory, for an element of material subjected to compressive and/or shear loading. Solutions compare favorably with experimental evidence and atomic simulations of amorphization in boron carbide, demonstrating the tendency for structural collapse and strength loss with increasing shear deformation and superposed pressure.

  12. Comment on: "Is linear group X-Y-Z in boron carbide the weakest link in the structure?" by S. V. Konovalikhin and V. I. Ponomarev (Russ. J. Phys. Chem. A 89 (10), 1850 (2015))

    Science.gov (United States)

    Werheit, H.

    2016-07-01

    The characterization of the boron carbide investigated in the above-mentioned paper and some of the conclusions made on it by the authors are critically appraised with regard to reliable results obtained earlier by other scientists.

  13. Atomistic Origin of Brittle Failure of Boron Carbide from Large-Scale Reactive Dynamics Simulations: Suggestions toward Improved Ductility

    Science.gov (United States)

    An, Qi; Goddard, William A.

    2015-09-01

    Ceramics are strong, but their low fracture toughness prevents extended engineering applications. In particular, boron carbide (B4C ), the third hardest material in nature, has not been incorporated into many commercial applications because it exhibits anomalous failure when subjected to hypervelocity impact. To determine the atomistic origin of this brittle failure, we performed large-scale (˜200 000 atoms /cell ) reactive-molecular-dynamics simulations of shear deformations of B4C , using the quantum-mechanics-derived reactive force field simulation. We examined the (0001 )/⟨10 1 ¯ 0 ⟩ slip system related to deformation twinning and the (01 1 ¯ 1 ¯ )/⟨1 ¯ 101 ⟩ slip system related to amorphous band formation. We find that brittle failure in B4C arises from formation of higher density amorphous bands due to fracture of the icosahedra, a unique feature of these boron based materials. This leads to negative pressure and cavitation resulting in crack opening. Thus, to design ductile materials based on B4C we propose alloying aimed at promoting shear relaxation through intericosahedral slip that avoids icosahedral fracture.

  14. The local physical structure of amorphous hydrogenated boron carbide: insights from magic angle spinning solid-state NMR spectroscopy.

    Science.gov (United States)

    Paquette, Michelle M; Li, Wenjing; Sky Driver, M; Karki, Sudarshan; Caruso, A N; Oyler, Nathan A

    2011-11-01

    Magic angle spinning solid-state nuclear magnetic resonance spectroscopy techniques are applied to the elucidation of the local physical structure of an intermediate product in the plasma-enhanced chemical vapour deposition of thin-film amorphous hydrogenated boron carbide (B(x)C:H(y)) from an orthocarborane precursor. Experimental chemical shifts are compared with theoretical shift predictions from ab initio calculations of model molecular compounds to assign atomic chemical environments, while Lee-Goldburg cross-polarization and heteronuclear recoupling experiments are used to confirm atomic connectivities. A model for the B(x)C:H(y) intermediate is proposed wherein the solid is dominated by predominantly hydrogenated carborane icosahedra that are lightly cross-linked via nonhydrogenated intraicosahedral B atoms, either directly through B-B bonds or through extraicosahedral hydrocarbon chains. While there is no clear evidence for extraicosahedral B aside from boron oxides, ∼40% of the C is found to exist as extraicosahedral hydrocarbon species that are intimately bound within the icosahedral network rather than in segregated phases.

  15. Ablation of boron carbide for high-order harmonic generation of ultrafast pulses in laser-produced plasma

    Science.gov (United States)

    Ganeev, R. A.; Suzuki, M.; Kuroda, H.

    2016-07-01

    We demonstrate the generation of harmonics up to the 27th order (λ=29.9 nm) of 806 nm radiation in the boron carbide plasma. We analyze the advantages and disadvantages of this target compared with the ingredients comprising B4C (solid boron and graphite) by studying the plasma emission and harmonic spectra from three species. We compare different schemes of the two-color pump of B4C plasma, particularly using the second harmonics of 806 nm laser and optical parametric amplifier (1310 nm) as the assistant fields, as well as demonstrate the sum and difference frequency generation using the mixture of the wavelengths of two laser sources. These studies showed the advantages of the two-color pump of B4C plasma leading to the stable harmonic generation and the growth of harmonic conversion efficiency. We also show that the coincidence of harmonic and plasma emission wavelengths in most cases does not cause the enhancement or decrease of the conversion efficiency of this harmonic. Our spatial characterization of harmonics shows their on-axis modification depending on the conditions of frequency conversion.

  16. Site-specific electron-induced cross-linking of ortho-carborane to form semiconducting boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Pasquale, Frank L. [Department of Chemistry, University of North Texas, Denton, TX 76203 (United States); Kelber, Jeffry A., E-mail: kelber@unt.edu [Department of Chemistry, University of North Texas, Denton, TX 76203 (United States)

    2012-01-15

    Semiconducting boron carbide (B{sub 10}C{sub 2}H{sub x}) films have been formed by bombardment of condensed ortho-carborane (closo-1,2-dicarbadodecaborane) multilayers on polycrystalline copper substrates by 200 eV electrons under ultra-high vacuum conditions. The film formation process was characterized by X-ray and ultraviolet photoelectron spectroscopies. Electron bombardment results in the cross-linking of the icosahedral units. The cross-linking is accompanied by a shift in the B(1s) binding energy indicating site-specific cross-linking between two boron sites on adjacent carborane icosahedra. An additional shift in valence band binding energies attributed to the surface photovoltage effect is indicative of the formation of a p-type semiconductor. This is the first report of B{sub 10}C{sub 2}H{sub x} formation by electron bombardment of condensed films, and the data indicate that this method is a viable route towards formation of ultra-thin films of tailored composition and cross-linkages for emerging nanoelectronics and sensor applications.

  17. The local physical structure of amorphous hydrogenated boron carbide: insights from magic angle spinning solid-state NMR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Paquette, Michelle M; Sky Driver, M; Karki, Sudarshan; Caruso, A N [Department of Physics, University of Missouri-Kansas City, Kansas City, MO 64110 (United States); Li Wenjing; Oyler, Nathan A, E-mail: oylern@umkc.edu [Department of Chemistry, University of Missouri-Kansas City, Kansas City, MO 64110 (United States)

    2011-11-02

    Magic angle spinning solid-state nuclear magnetic resonance spectroscopy techniques are applied to the elucidation of the local physical structure of an intermediate product in the plasma-enhanced chemical vapour deposition of thin-film amorphous hydrogenated boron carbide (B{sub x}C:H{sub y}) from an orthocarborane precursor. Experimental chemical shifts are compared with theoretical shift predictions from ab initio calculations of model molecular compounds to assign atomic chemical environments, while Lee-Goldburg cross-polarization and heteronuclear recoupling experiments are used to confirm atomic connectivities. A model for the B{sub x}C:H{sub y} intermediate is proposed wherein the solid is dominated by predominantly hydrogenated carborane icosahedra that are lightly cross-linked via nonhydrogenated intraicosahedral B atoms, either directly through B-B bonds or through extraicosahedral hydrocarbon chains. While there is no clear evidence for extraicosahedral B aside from boron oxides, {approx}40% of the C is found to exist as extraicosahedral hydrocarbon species that are intimately bound within the icosahedral network rather than in segregated phases. (paper)

  18. Atomistic Origin of Brittle Failure of Boron Carbide from Large-Scale Reactive Dynamics Simulations: Suggestions toward Improved Ductility.

    Science.gov (United States)

    An, Qi; Goddard, William A

    2015-09-01

    Ceramics are strong, but their low fracture toughness prevents extended engineering applications. In particular, boron carbide (B(4)C), the third hardest material in nature, has not been incorporated into many commercial applications because it exhibits anomalous failure when subjected to hypervelocity impact. To determine the atomistic origin of this brittle failure, we performed large-scale (∼200,000  atoms/cell) reactive-molecular-dynamics simulations of shear deformations of B(4)C, using the quantum-mechanics-derived reactive force field simulation. We examined the (0001)/⟨101̅0⟩ slip system related to deformation twinning and the (011̅1̅)/⟨1̅101⟩ slip system related to amorphous band formation. We find that brittle failure in B(4)C arises from formation of higher density amorphous bands due to fracture of the icosahedra, a unique feature of these boron based materials. This leads to negative pressure and cavitation resulting in crack opening. Thus, to design ductile materials based on B(4)C we propose alloying aimed at promoting shear relaxation through intericosahedral slip that avoids icosahedral fracture.

  19. Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper

    International Nuclear Information System (INIS)

    In order to understand the fundamental charge transport in a-B:H and a-BX:H (X = C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorphous boron compound interfaces formed with (1 0 0) Si and polished poly-crystalline Cu substrates. For interfaces formed by plasma enhanced chemical vapor deposition of a-B4–5C:H on (1 0 0) Si, relatively small valence band offsets of 0.2 ± 0.2 eV were determined. For a-B:H/Cu interfaces, a more significant Schottky barrier of 0.8 ± 0.16 eV was measured. These results are in contrast to those observed for a-BN:H and BP where more significant band discontinuities (>1–2 eV) were observed for interfaces with Si and Cu.

  20. Growth of boric acid crystallites on the surface of boron-doped silicon carbide samples

    International Nuclear Information System (INIS)

    White crystallites were visually observed on fractured or polished surfaces of SiC samples (grain sizes below ∼500 nm) during exposure to air at room temperature for several days. Characterization of the crystallites by scanning electron microscopy, secondary ion mass spectroscopy, and X-ray diffraction identified B(OH)3 crystals with a strong (002) texture. The rate of boric acid formation was determined by a gravimetric experiment. The rate of weight gain increased significantly after an incubation period of 1 week. Nucleation is initially the rate-limiting process. Subsequently small B(OH)3 crystals form on the surface, whose growth rate is determined by grain boundary diffusion of boron to the SiC surface. An estimated grain boundary boron to the SiC surface. An estimated grain boundary diffusion coefficient of boron in SiC was many orders of magnitude higher than extrapolated literature values

  1. Determination of Abundance of Boron in Boron Carbide Samples with MC-ICP-MS%电感耦合等离子体质谱法测定碳化硼中的硼同位素丰度

    Institute of Scientific and Technical Information of China (English)

    朱留超; 赵永刚; 鹿捷; 张燕; 李力力; 徐常昆; 赵兴红; 王同兴; 姜小燕

    2015-01-01

    以碳酸钙为熔剂高温分解,硝酸浸取、硫酸沉淀的方法处理碳化硼样品,稀释后直接进行多接收电感耦合等离子体质谱分析,对碳化硼中的硼同位素丰度进行测定。扫描电镜分析结果表明,碳化硼颗粒形状不规则,尺寸小于50μm。利用建立的方法处理样品,可实现碳化硼样品的完全溶解,回收率接近100%。对样品中10B丰度进行分析,相对标准偏差为0.023%~0.035%(n=6),测量结果与参考值在不确定度范围内保持一致,证明实验方法可行。所建立的碳化硼样品测量方法样品处理步骤简便,分析速度快,测量精度高,可作为碳化硼中硼同位素丰度的常规分析方法。%A method was developed for the abundance analysis of boron in boron carbide samples by multi-collector inductively coupled plasma mass spectrometry(MC–ICP–MS). The samples were melted with calcium carbonate in muffle furnace, and then dissolved in nitric acid,finally sulfuric acid was added to precipitate the calcium. The particle of boron carbide was analysized by scan electron microscope(SEM). The results showed that the particle shape of boron carbide particle distributed anomaly and the size was less than 50μm. By this method, the boron carbide samples were dissolved entirely and the recovery of whole procedure was approached to 100%. The measurement results of10B abundance obtained were in good accordance with reference value within their expanded uncertainty, which proved the feasibility of the experiment method. The relative standard deviations were 0.023%–0.035%(n=6). The method developed can be applied for the abundance analysis of boron in boron carbide, which have the advantage of simple pretreatment of sample, fast analysis and high measurement precision.

  2. Research of Boron Carbide-Aluminum Composites%碳化硼-铝复合材料的研究进展

    Institute of Scientific and Technical Information of China (English)

    刘明朗; 韩增尧; 郎静; 马南钢; 吴骁行

    2011-01-01

    Boron carbide ceramics have the properties of high hardness, high melting point and low density, they will be more widely used if they can combine with Al to overcome their faults. Boron carbide-aluminum composites can be divided into aluminum matrix and boron carbide matrix according to the different matrix. The preparation process,interface reaction and wettability are presented in this paper, and the developing tendency of this materials is pointed out Finally, it is pointed out that this materails will be widely used in the fields of large area protection with the deepening of the research.%碳化硼陶瓷具有高硬度、高熔点、低密度的特点,将其与金属铝复合能克服自身缺陷,使其得到更广泛的应用.碳化硼-铝复合材料按照基体的不同可分为铝基和碳化硼基两大类,分别综述了其制备工艺、界面反应以及润湿性,并展望了其发展方向,最后指出,随着研究的深入该复合材料将在大面积防护领域得到广泛应用.

  3. 核用碳化硼制备工艺研究进展%Progress in preparation of boron carbides used as nuclear shielding material

    Institute of Scientific and Technical Information of China (English)

    郑伟; 徐姣; 张卫江

    2011-01-01

    Boron carbides are very important materials in refractory liners, dies, bearings, sandblasting nozzles and nuclear industry. In this paper, the production processes for boron carbides are introduced, which include the carbothermal reduction, self-propagation high-temperature synthesis, chemical vapor deposition and sol-gel carbothermal reduction method. The advantages and disadvantages of all the methods are compared. The difficulties, problems and development direction of how to produce boron carbides are discussed.%碳化硼是一种被广泛应用在耐火材料、模具、轴承、喷嘴和核工业中的新型材料,主要介绍了有关制备碳化硼的工艺,其主要包括碳热还原法、自蔓延热还原法、化学气相沉积法和溶胶-凝胶碳热还原法.通过对比指出各种方法的优缺点,探讨了碳化硼制备的研究现状、存在的问题及发展方向.

  4. Effect of addition of tartaric acid on synthesis of boron carbide powder from condensed boric acid–glycerin product

    Energy Technology Data Exchange (ETDEWEB)

    Tahara, Naoki; Kakiage, Masaki, E-mail: kakiage@apc.saitama-u.ac.jp; Yanase, Ikuo; Kobayashi, Hidehiko

    2013-10-05

    Highlights: •B{sub 4}C powder was synthesized from a condensed H{sub 3}BO{sub 3}-glycerin product with tartaric acid added. •A precursor consisting of B{sub 2}O{sub 3} and carbon was prepared by the thermal decomposition in air. •The precursors had a three-dimensional bicontinuous B{sub 2}O{sub 3}/carbon network structure. •The dispersion state became more homogeneous and finer with the addition of tartaric acid. •The complete formation of B{sub 4}C powder was achieved at 1250 °C within a shorter heat treatment time. -- Abstract: The effect of the addition of tartaric acid on the synthesis of boron carbide (B{sub 4}C) powder from a condensed boric acid (H{sub 3}BO{sub 3})–glycerin product was investigated in this study. The condensed product was prepared by dehydration condensation after directly mixing equimolar amounts of H{sub 3}BO{sub 3} and glycerin with the addition of 0–50 mol% tartaric acid (based on glycerin), which was followed by thermal decomposition in air to obtain a precursor powder from which excess carbon had been eliminated. The dispersion state of the boron oxide (B{sub 2}O{sub 3}) and carbon components in the precursor prepared from the condensed product with 25 mol% tartaric acid added was finer than that without tartaric acid added, in which both precursors had a three-dimensional bicontinuous B{sub 2}O{sub 3}/carbon network structure. The complete formation of crystalline B{sub 4}C powder was achieved at 1250 °C within a shorter heat treatment time for the precursor with a fine dispersion state. The synthesized B{sub 4}C powders became fine owing to the increased number of nucleation sites.

  5. Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

    Energy Technology Data Exchange (ETDEWEB)

    Serra, R., E-mail: ricardo.serra@dem.uc.pt [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Oliveira, V. [ICEMS-Instituto de Ciência e Engenharia de Materiais e Superfícies, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Oliveira, J.C. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Kubart, T. [The Ångström Laboratory, Solid State Electronics, P.O. Box 534, SE-751 21 Uppsala (Sweden); Vilar, R. [Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Instituto Superior Técnico, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal)

    2015-03-15

    Highlights: • Large-area LIPSS were formed by femtosecond laser processing B-C films surface. • The LIPSS spatial period increases with laser fluence (140–200 nm). • Stress-related sinusoidal-like undulations were formed on the B-C films surface. • The undulations amplitude (down to a few nanometres) increases with laser fluence. • Laser radiation absorption increases with surface roughness. - Abstract: Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm{sup 2}. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under

  6. Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

    Science.gov (United States)

    Serra, R.; Oliveira, V.; Oliveira, J. C.; Kubart, T.; Vilar, R.; Cavaleiro, A.

    2015-03-01

    Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm2. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under different circumstances. Processing of the amorphous films at low fluence (72 μJ) results in LIPSS formation only on localized spots on the film surface. LIPSS formation was also observed on the top of the undulations formed after laser processing with 78 μJ of the amorphous film deposited at 800 °C. Finally, large-area homogeneous LIPSS coverage of the boron carbide crystalline films surface was achieved within a large range

  7. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation; Oberflaechenmodifikation des Hartmetalls Wolframkarbid-Kobalt durch Bor-Ionenimplantation

    Energy Technology Data Exchange (ETDEWEB)

    Mrotchek, I.

    2007-09-07

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and {approx}5.10{sup 17} ions/cm{sup 2} fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co{sub 3}W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load.

  8. Role of friction stir processing parameters on microstructure and microhardness of boron carbide particulate reinforced copper surface composites

    Indian Academy of Sciences (India)

    R Sathiskumar; N Murugan; I Dinaharan; S J Vijay

    2013-12-01

    Friction stir processing (FSP) was applied to fabricate boron carbide (B4C) particulate reinforced copper surface composites. The effect of FSP parameters such as tool rotational speed, processing speed and groove width on microstructure and microhardness was investigated. A groove was contrived on the 6mm thick copper plates and packed with B4C particles. FSP was carried out using five various tool rotational speeds, processing speeds and groove widths. Optical and scanning electron microscopies were employed to study the microstructure of the fabricated surface composites. The results indicated that the selected FSP parameters significantly influenced the area of surface composite, distribution of B4C particles and microhardness of the surface composites. Higher tool rotational speed and lower processing speed produced an excellent distribution of B4C particles and higher area of surface composite due to higher frictional heat, increased stirring and material tranportation. The B4C particles were bonded well to the copper matrix and refined the grains of copper due to the pinning effect of B4C particles. B4C particles retained the original size and morphology because of its small size and minimum sharp corners in the morphology.

  9. Density functional theory study of ultrasmall diameter (2,2) boron nitride, silicon carbide, and carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Fakhrabad, Davoud Vahedi; Shahtahmassebi, Nasser [Nano Research Center, Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Movlarooy, Tayebeh [Department of Physics, Shahrood University of Technology, Shahrood (Iran, Islamic Republic of)

    2012-05-15

    We present a first principles calculation on the electronic structure and optical properties of ultrasmall-diameter (2,2) boron nitride, silicon carbide, and carbon nanotubes (BNNT, SiCNT, and CNT) by using full potential linear augmented plane wave (FP-LAPW) and pseudo potential plane wave (PP-PW) methods. The atomic geometries of all considered models are optimized. Calculations of optical spectra are performed under electric fields polarized both parallel and perpendicular with respect to the nanotube (NT) axis. Our results show that the dielectric function is anisotropic and it is revealed that (2,2) SiCNT would be better dielectric material than (2,2) BNNT. We have calculated the first, second and third optical transitions for the considered models. The value of the optical gap for (2,2) BNNT is obtained much larger than that of (2,2) SiCNT and (2,2) CNT. The results show that contrary to the (2,2) CNT being metallic, the (2,2) BNNT, and (2,2) SiCNT are wide indirect gap semiconductors. We also present the energy loss function; in this case the intertube interactions play an important role with respect to the optical spectroscopy. Our results revealed that unlike the dielectric function, the calculated energy loss function show rather weak anisotropy. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Joining of SiC-ceramics by means of boron carbide, silicon and carbon for high temperature applications

    International Nuclear Information System (INIS)

    The present work is a contribution to joining of SiC-Ceramics for high temperature applications. The aim was to develop a joining technique for Silicon Carbide ceramics by means of boron, carbon and silicon. The joint is created by the formation of a welding zone, which consists of SiC as it is the material to be joined. For this purpose are used the follow means: (a) sputtering layers of B4C, Si and C, (b) vacuum coatings of Si or Si foils and C, (c) powder mixtures of B4C, Si and C. The joints were examined at ceramographic cross sections of the bonding zone, by means of XRD, REM/EDAX, TEM and EPMA. The bond strength was determined in the 4-point bend test at room temperature and at 1370 C. It was found that a useable result can be obtained, if the temperature of the joining process exceeds the melting point of Si (1410 C). A high bending strength with a high Weibull modulus was achieved by using sputter layers. The powder mixtures provided a satisfactory bending strength with a low Weibull modulus. (orig.)

  11. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  12. Synthesis, characterization and thermoelectric properties of metal borides, boron carbides and carbaborides; Synthese, Charakterisierung und thermoelektrische Eigenschaften ausgewaehlter Metallboride, Borcarbide und Carbaboride

    Energy Technology Data Exchange (ETDEWEB)

    Guersoy, Murat

    2015-07-06

    This work reports on the solid state synthesis and structural and thermoelectrical characterization of hexaborides (CaB{sub 6}, SrB{sub 6}, BaB{sub 6}, EuB{sub 6}), diboride dicarbides (CeB{sub 2}C{sub 2}, LaB{sub 2}C{sub 2}), a carbaboride (NaB{sub 5}C) and composites of boron carbide. The characterization was performed by X-ray diffraction methods and Rietveld refinements based on structure models from literature. Most of the compounds were densified by spark plasma sintering at 100 MPa. As high-temperature thermoelectric properties the Seebeck coefficients, electrical conductivities, thermal diffusivities and heat capacities were measured between room temperature and 1073 K. ZT values as high as 0.5 at 1273 K were obtained for n-type conducting EuB{sub 6}. High-temperature X-ray diffraction also confirmed its thermal stability. The solid solutions Ca{sub x}Sr{sub 1-x}B{sub 6}, Ca{sub x}Ba{sub 1-x}B{sub 6} and Sr{sub x}Ba{sub 1-x}B{sub 6} (x = 0, 0.25, 0.5, 0.75, 1) are also n-type but did not show better ZT values for the ternary compounds compared to the binaries, but for CaB{sub 6} the values of the figure of merit (ca. 0.3 at 1073 K) were significantly increased (ca. 50 %) compared to earlier investigations which is attributed to the densification process. Sodium carbaboride, NaB{sub 5}C, was found to be the first p-type thermoelectric material that crystallizes with the hexaboride-structure type. Seebeck coefficients of ca. 80 μV . K{sup -1} were obtained. Cerium diboride dicarbide, CeB{sub 2}C{sub 2}, and lanthanum diboride dicarbide, LaB{sub 2}C{sub 2}, are metallic. Both compounds were used as model compounds to develop compacting strategies for such layered borides. Densities obtained at 50 MPa were determined to be higher than 90 %. A new synthesis route using single source precursors that contain boron and carbon was developed to open the access to new metal-doped boron carbides. It was possible to obtain boron carbide, but metal-doping could not be

  13. STUDY ON THE DECOMPOSING METHOD IN SAMPLES OF NUCLEAR GRADE BORON CARBIDE%核级碳化硼试样分解方法的研究

    Institute of Scientific and Technical Information of China (English)

    刘若鸣

    2001-01-01

    A method for the decomposition of the nuclear-grade boron carbide sample is proposed in this paper. The powdered boron carbide sample is mixed thoroughly with CaCO3 and fused at 1000℃C in a muffle furnace by raising the temperature at a rate of 300℃ per an hour. The sample in the molten state is kept for 5 h. under 1000℃. The fused sample is cooled and extracted with H2O and acidified with HC1. The sample solution is diluted to 250ml in a volumetric flask and used for the determination of total boron, iron and/or aluminum.%在对核级碳化硼试样的多种分解方法进行简要介绍和分析之后,提出了以碳酸钙作熔剂在高温下分解试样,以盐酸浸取的方法,此方法应用于核级碳化硼中总硼、铁、铝等的测定获得了满意的结果。

  14. Gamma Scintillator System Enhancement for Neutron Detection using Boron Carbide for Homeland Security

    International Nuclear Information System (INIS)

    An efficient and low cost 10B based thermal neutron detector as a replacement for 3He based neutron detectors is suggested. The detection is based on an enhancement to a scintillator gamma-rays detector. 3He supply for neutron detectors is gradually become harder to obtain(1) since the commercial production of this isotope has been practically ended. The 10B(n, )7Li interaction is characterized with two energetic ion and a 478 keV gamma photon which is emitted from the excited 7Li in 94% of the interactions(2). A tailored Monte-Carlo code for the detector model was written in MATLAB in order to assess the detector's efficiency. The simulation model is based on ENDF/B-VII.0(3) libraries for neutrons cross sections, and XCOM(4) database for gamma absorption coefficients. By varying the B4C thickness, optimal efficiency was obtained both for natural occurring 10B compound with atomic abundance of 19.8% as well as for boron-10 enriched to 96%

  15. Ab initio calculations of mechanical, thermodynamic and electronic structure properties of mullite, iota-alumina and boron carbide

    Science.gov (United States)

    Aryal, Sita Ram

    The alumino-silicate solid solution series (Al 4+2xSi2-2 xO10-x) is an important class of ceramics. Except for the end member (x=0), Al2 SiO5 the crystal structures of the other phases, called mullite, have partially occupied sites. Stoichiometric supercell models for the four mullite phases 3Al2O 3 · 2SiO2 · 2Al 2O3 · SiO2, 4 Al2O3· SiO 2, 9Al2O3 · SiO2, and iota-Al2 O3 (iota-alumina) are constructed starting from experimentally reported crystal structures. A large number of models were built for each phase and relaxed using the Vienna ab initio simulation package (VASP) program. The model with the lowest total energy for a given x was chosen as the representative structure for that phase. Electronic structure and mechanical properties of mullite phases were studied via first-principles calculations. Of the various phases of transition alumina, iota-Al 2O3 is the least well known. In addition structural details have not, until now, been available. It is the end member of the aluminosilicate solid solution series with x=1. Based on a high alumina content mullite phase, a structural model for iota- Al2O3 is constructed. The simulated x-ray diffraction (XRD) pattern of this model agrees well with a measured XRD pattern. The iota-Al2 O3 is a highly disordered ultra-low-density phase of alumina with a theoretical density of 2854kg/m3. Using this theoretically constructed model, elastic, thermodynamic, electronic, and spectroscopic properties of iota-Al2 O3 have been calculated and compared it with those of alpha- Al2O3 and gamma- Al2O3. Boron carbide (B4C) undergoes an amorphization under high velocity impacts. The mechanism of amorphization is not clear. Ab initio methods are used to carry out large-scale uniaxial compression simulations on two polytypes of stoichiometric boron carbide (B4C), B 11C-CBC, and B12- CCC where B11C or B12 is the 12-atom icosahedron and CBC or CCC is the three-atom chain. The simulations were performed on large supercells of 180 atoms

  16. Cumulative fission yields of short-lived isotopes under natural-abundance-boron-carbide-moderated neutron spectrum

    Energy Technology Data Exchange (ETDEWEB)

    Finn, Erin C.; Metz, Lori A.; Greenwood, Lawrence R.; Pierson, Bruce; Wittman, Richard S.; Friese, Judah I.; Kephart, Rosara F.

    2015-04-09

    The availability of gamma spectroscopy data on samples containing mixed fission products at short times after irradiation is limited. Due to this limitation, data interpretation methods for gamma spectra of mixed fission product samples, where the individual fission products have not been chemically isolated from interferences, are not well-developed. The limitation is particularly pronounced for fast pooled neutron spectra because of the lack of available fast reactors in the United States. Samples containing the actinide isotopes 233, 235, 238U, 237Np, and 239Pu individually were subjected to a 2$ pulse in the Washington State University 1 MW TRIGA reactor. To achieve a fission-energy neutron spectrum, the spectrum was tailored using a natural abundance boron carbide capsule to absorb neutrons in the thermal and epithermal region of the spectrum. Our tailored neutron spectrum is unique to the WSU reactor facility, consisting of a soft fission spectrum that contains some measurable flux in the resonance region. This results in a neutron spectrum at greater than 0.1 keV with an average energy of 70 keV, similar to fast reactor spectra and approaching that of 235U fission. Unique fission product gamma spectra were collected from 4 minutes to 1 week after fission using single-crystal high purity germanium detectors. Cumulative fission product yields measured in the current work generally agree with published fast pooled fission product yield values from ENDF/B-VII, though a bias was noted for 239Pu. The present work contributes to the compilation of energy-resolved fission product yield nuclear data for nuclear forensic purposes.

  17. New Progress in the Preparation of Sintering and Application of Boron Carbide Ceramics%碳化硼陶瓷的烧结与应用新进展

    Institute of Scientific and Technical Information of China (English)

    杨亮亮; 谢志鹏; 刘维良; 魏红康; 赵琳; 宋明

    2015-01-01

    碳化硼陶瓷具有高硬度、高弹性模量、耐磨损、耐腐蚀等优点,是一种综合性能优异的结构材料。碳化硼陶瓷可通过有效添加剂、适当的温度与压力等条件实现致密化烧结,从而提高其综合性能,因此碳化硼的致密化烧结是其关键技术。本文论述了碳化硼陶瓷致密化烧结工艺的基本原理及烧结方法,在此基础上总结了碳化硼陶瓷在陶瓷装甲、核能和耐磨技术等重要领域的应用。%Boron carbide ceramics are typical structural materials with excellent comprehensive properties, due to their high hardness, high elastic modulus, excellent resistance to wear and corrosion, as well as other advantages. The densiifcation of boron carbide ceramics can be realized by effective additives, appropriate temperature and pressure to improve their mechanical behaviors. Thus, the sintering and densiifcation are the key steps in the entire preparing process. Here, the basic principle and routes of the sintering of boron carbide ceramics are summarized, and their applications in the ifeld of armor, nuclear power, and abrasives are presented.

  18. SINTERING MECHANISM OF PURE AND CARBON_DOPED BORON CARBIDE%纯B4C和掺碳B4C的烧结机制

    Institute of Scientific and Technical Information of China (English)

    尹邦跃; 王零森; 方寅初

    2001-01-01

    Sintering densificaton process of pure and carbon_doped boron carbide powders with 0.42 μm median particle size were studied. Their sintering kinetic equations were obtained according to the influence of sintering temperature and holding time on linear shrinkage rate. The sintering mechanisms were investigated by comparing the characteristic exponent n. It is deduced that the main sintering mechanisms shill be volume diffusion and grain boundary diffusion for pure boron carbide and grain boundary diffusion for carbon_doped boron carbide showing activated sintering. The relative density of the carbon_doped B4C sintered at 2 160 ℃ for 45 min is more than 90%. Apart from those dissolved in the sintered boron carbide, the rest of the added carbon is in the form of free carbon, no new phase formed. Carbon_doping also result in a great decrease of B4C grain size.%研究了中位粒径为0.42 μm的纯B4C和掺碳B4C粉末的烧结致密化过程. 根据烧结温度和保温时间对线收缩率的影响,得出了它们的烧结动力学方程;由特征指数n值对比研究了它们的烧结致密化机制. 纯B4C的烧结致密化机制为体扩散和晶界扩散,而掺碳B4C的烧结机制主要为晶界扩散,因此,掺碳对B4C起到了活化烧结的作用. 在2 160 ℃烧结45 min,掺碳B4C烧结后相对密度大于90%. 掺入的碳除了固溶于B4C晶格中之外,其它均以游离石墨形式存在,不形成新相. 掺碳还导致B4C晶粒尺寸大大减小.

  19. Preparation of Boron Carbide Spherical Films and Hollow Microsphere%碳化硼球面薄膜及空心微球的制备

    Institute of Scientific and Technical Information of China (English)

    于小河; 卢铁城; 林涛; 王自磊; 陶勇; 廖志君

    2012-01-01

    Boron carbide spherical-films were prepared by electron-beam evaporation deposition technique on steel ball substrates,combined with a independently designed magnetron rolling method. The boron carbide micro-shell was obtained after sintering, drilling and corrosion. The microcosmic appearance, microstructure, morphology, element composition of the boron carbide spherical films were investigated. The effect of annealing temperature (800-1100℃) on the boron carbide hollow micro-shells was also studied. The products were characterized by scanning electron microscope (SEM), X-ray photoelectron spectroscope (XPS), atomic force microscope (AFM). The results show that the film is dense without any cracks and pores. Besides, the elemental distribution is well-proportioned. When the annealing temperature is over 900℃, the coating is self-standing formed into a hollow microsphere. The hollow microsphere annealed at 900℃ has the best micro appearance with a thickness over 10μm.%采用电子束蒸发镀膜技术,结合磁控滚动方法在φ1 mm的钢球基底上制备碳化硼球面膜层,通过退火、打孔及腐蚀获得碳化硼空心微球.主要研究了球面膜层的宏观形貌、微观结构、成分及初步探讨了不同退火温度(800~1100℃)对核膜结构空心化的影响.利用扫描电子显微镜(SEM)、X射线光电子能谱分析(XPS)、原子力显微镜(AFM)对球面薄膜表面形态和薄膜元素组成进行了分析.结果表明:磁控滚动模式制备的球面膜层表面平整,没有裂纹和孔洞,元素分布均匀.核膜结构(镀膜时间在5~70 h)经900℃以上温度退火,空心化后的球面膜层可实现自支撑,900℃退火的微球表面形貌最好,壁厚可达10 μm以上.

  20. Optical properties of boron carbide near the boron K edge evaluated by soft-x-ray reflectometry from a Ru/B(4)C multilayer.

    Science.gov (United States)

    Ksenzov, Dmitriy; Panzner, Tobias; Schlemper, Christoph; Morawe, Christian; Pietsch, Ullrich

    2009-12-10

    Soft-x-ray Bragg reflection from two Ru/B(4)C multilayers with 10 and 63 periods was used for independent determination of both real and imaginary parts of the refractive index n = 1 - delta + ibeta close to the boron K edge (approximately 188 eV). Prior to soft x-ray measurements, the structural parameters of the multilayers were determined by x-ray reflectometry using hard x rays. For the 63-period sample, the optical properties based on the predictions made for elemental boron major deviations were found close to the K edge of boron for the 10-period sample explained by chemical bonding of boron to B(4)C and various boron oxides.

  1. 等离子喷涂B4C涂层的抗辐射性能研究%Anti-radiation behavior of plasma sprayed boron carbide coatings

    Institute of Scientific and Technical Information of China (English)

    李龙根; 徐志勇; 钱浩

    2009-01-01

    目的 研究用等离子技术喷涂的碳化硼(B4C)涂层的抗辐射能力.方法 将0.1 mm厚度B4C涂在16号锰钢上,研究它对加速器产生的6、10、15 MV高能射线,6、9、12、15 MeV高能电子线,60Co γ线和快中子辐射的防护作用.同时将0.1 mm B4C涂在纸板上,研究它对深部X线机的X线辐射的防护作用.结果 等离子喷涂制备B4C涂层对高能X线和60Co γ线没有防护作用.对电子线有一定防护作用,且随深度的增加有增大趋势,但作用不大.对快中子有较大防护作用.对深部X线机X线有防护作用,防护能力较强.0.1 mm厚的涂层就可带来15%的衰减.结论 用等离子技术喷涂的B4C涂层可在医学领域用来防护千伏级射线.%Objective To study anti-radiation behavior of plasma sprayed boron carbide coatings. Methods The anti-radiation capacity of 16Mn steel which was coated with 0.1 mm plasma sprayed boron carbide were studied. The irradiation beams were 6,10,15 MY X-ray and 6,9,12,15 MeV electron emitted by accelerator, X-ray emitted by 60Co machine,fast neutron, and X-ray emitted by kilovoltage X-ray ma-chine. Results Anti-radiation capacity of plasma sprayed boron carbide coatings was not found for X-ray beams emitted by accelerator and 60Co machine. For electron beams,the anti-radiation capacity were found. The deeper of location, the stronger was anti-radiation. However, the anti-radiation capacity was not good. For fast neutron,the anti-radiation capacity was good. For X-ray emitted by kilovoltage X-ray machine,the anti-radiation was good,and only 0.1 nun plasma sprayed boron carbide had 15% attenuation. Conclusions The plasma sprayed boron carbide coatings have the anti-radiation capacity for X-ray emitted by kilovoltage X-ray machine in medical field.

  2. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

    Science.gov (United States)

    Nordell, Bradley J.; Karki, Sudarshan; Nguyen, Thuong D.; Rulis, Paul; Caruso, A. N.; Purohit, Sudhaunshu S.; Li, Han; King, Sean W.; Dutta, Dhanadeep; Gidley, David; Lanford, William A.; Paquette, Michelle M.

    2015-07-01

    Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-BxC:Hy) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (EU), and Tauc parameter (B1/2)], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-BxC:Hy thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm3, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 1010 to 1015 Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ˜1.3 g/cm3 (or below ˜35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters EU and B1/2, with increasing H concentration is explained by the release of strain in the network and associated decrease in structural disorder. All of these correlations in a-BxC:Hy are found to be very similar to those

  3. Synthesis of Boron Carbide Nano Powder by Solid State Reaction%固相反应法合成碳化硼纳米粉体

    Institute of Scientific and Technical Information of China (English)

    曾洪; 阚艳梅; 徐常明; 王佩玲; 张国军

    2011-01-01

    Boron carbide (B4C) powder was synthesized by solid state reaction of hexagonal boron nitride with carbon black (or graphite). The phase assemblages of synthesized powders were influenced by carbon source, atmosphere and temperature. Boron carbide powder with an average particle size of about 100 nm was obtained using carbon black as the carbon source at 1900℃ for 5 h in vacuum. The relative density of the sintered sample (2000℃/30 Mpa/1 h) derived from the synthesized powder reached 97.9%, while that prepared from the commercial powder was 93.1%. The better sinterability of the synthesized powder than the commercial one can be attributed to the finer particle size, lower oxygen content and the twin structure of the powder.%以六方氮化硼和炭黑(或石墨)为原料,采用固相反应法合成了碳化硼粉体.碳源、反应气氛和温度对粉体合成产生重要影响.以炭黑为碳源,在1900℃真空下保温5h,得到了平均粒径约为100 nm的碳化硼纳米粉体.与商业粉体相比,合成的粉体具有较好的烧结活性.在2000℃/30 MPa/1 h条件下烧结,样品的相对密度达到97.9%(商业粉体样品为93.1%),这可归结于合成的粉体具有细小的粒径、低的氧含量和一定程度的孪晶结构.

  4. Application of Special Processing Technology of the Dynamic Pressure Bearing Parts of Boron Carbide%碳化硼材料动压轴承零件的特种加工技术应用

    Institute of Scientific and Technical Information of China (English)

    邵荔宁; 孙保和; 周景春; 翁长志; 刘彪

    2015-01-01

    The performance feature of the material of boron carbide and the structure and the precision of bearing parts of boron carbide were introduced. The problems of the boron carbide machining and the features of special processing technology were presented. The application of pressure bearing parts of boron carbide for ion etching process, electric spark machining and ultrasonic machining and the implementation effect of them were expounded.%简要介绍碳化硼材料的性能特点、碳化硼轴承零件的结构和精度,说明碳化硼材料机械加工存在的问题以及特种加工技术的特点,重点论述了离子刻蚀加工、电火花加工和超声加工技术在碳化硼材料轴承零件加工中的应用情况以及取得的实际效果。

  5. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  6. Electronic transport in boron carbides: temperature (4K-300K), frequency (0-1 GHz) and composition (B13C2-B4C) effects

    International Nuclear Information System (INIS)

    Boron carbide is a light ceramics of industrial interest. The equilibrium diagram reveals a large compositional range (B9C to B4C). The compositions close to the boundary B4C are obtained by pressing directly in graphite dies while the other compositions were obtained by using boron nitride lined graphite dies and boron additions to the commercial powders. The starting point of the present study was the idea to use the electrical transport properties as possible ways of characterising the industrial materials. We were thus led to measure at low temperatures dc and ac conductivity, dielectric constant and thermopower. The successful study of a measurement method for ac measurements between 10 KHz and 1 GHz and between 4 K and 300 K was one of the main experimental points of the present work. ac measurements have permitted a clear separation between bulk and grain boundary effects on the transport. The bulk results were analysed in terms of the usual conduction models in disordered solids (hopping, polarons...)

  7. Preparation and properties of boron carbide film using pulsed laser deposition%碳化硼薄膜的激光法制备及性能

    Institute of Scientific and Technical Information of China (English)

    王淑云; 陆益敏; 刘旭; 黄国俊; 郭延龙; 万强; 田方涛

    2013-01-01

    采用KrF准分子激光器,在Si,Ge光学衬底上制备了碳化硼薄膜,研究了不同激光能量、靶材与衬底距离、衬底负偏压等条件对薄膜性能的影响.利用傅里叶变换红外光谱仪(FT IR)和纳米压痕仪,并依据光学薄膜测试的通用标准,对样品的光学透过率、纳米硬度及膜层与衬底的结合性能进行了测试.结果表明:Si,Ge衬底单面镀碳化硼薄膜后最高透过率提高10%以上,纳米硬度提高到未镀膜的3倍以上,且膜层与衬底有较好的结合性能,表明制备的碳化硼薄膜可对光学材料起到较好的增透保护作用.%Boron carbide films were deposited on Si and Ge substrates using KrF eximer laser. Influences of laser energy, distance between the target and substrate, and bias voltage were studied. A Fourier transform infrared spectroscope and a nano-indenter were used to test the optical transmission and hardness of the samples. Furthermore, the adhesion performance of the film and substrate was tested according to the common criterion of optical films. The largest transmission of Si and Ge advanced 10% after only one surface of substrates was coated by boron carbide films. The nano-hardness of the coated substrates reached more than 3 times that of the uncoated substrates and the adhesion was also satisfactory. The results show that boron carbide films are useful as anti-reflective and protective films for optical substrates.

  8. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Nordell, Bradley J.; Karki, Sudarshan; Nguyen, Thuong D.; Rulis, Paul; Caruso, A. N.; Paquette, Michelle M., E-mail: paquettem@umkc.edu [Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); Purohit, Sudhaunshu S. [Department of Chemistry, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); Li, Han; King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Dutta, Dhanadeep; Gidley, David [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lanford, William A. [Department of Physics, University at Albany, Albany, New York 12222 (United States)

    2015-07-21

    Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-B{sub x}C:H{sub y}) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (E{sub U}), and Tauc parameter (B{sup 1/2})], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-B{sub x}C:H{sub y} thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm{sup 3}, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 10{sup 10} to 10{sup 15} Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ∼1.3 g/cm{sup 3} (or below ∼35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters E{sub U} and B{sup 1/2}, with increasing H concentration is explained by the release of strain in the network and associated decrease in

  9. Dispersing stability of nano boron carbide in water-based fluid%纳米碳化硼在水基础液中的分散稳定性

    Institute of Scientific and Technical Information of China (English)

    宋铮铮; 吴张永; 莫子勇; 王娴; 王娟

    2015-01-01

    以纳米碳化硼粉体为纳米材料,聚乙二醇、羧甲基纤维素钠为分散剂,蒙脱石为抗沉降稳定剂,RO反渗透膜处理水为分散介质,采用两步法制备了水基纳米碳化硼溶液。研究了不同分散条件对纳米碳化硼在水基础液中的分散情况,并采用沉降稳定性分析、流变特性分析来评价其分散效果。实验结果表明,分散剂种类、分散剂质量分数、纳米碳化硼的粒径、纳米碳化硼的质量分数都会对溶液分散稳定性产生一定的影响。研究得出,用质量分数为0.4%的聚乙二醇(PEG600)作为分散剂、用粒径为60nm的纳米碳化硼且质量分数为0.8%~0.9%时,能够使得纳米碳化硼在水基础液中达到最佳稳定分散的效果。%Water-based nano boron solution was prepared with nano boron carbide powder as nanomaterial,polyethylene glycol,sodium carboxymethyl cellulose as dispersing agent, montmorillonite as antisedimentation stabilizer,RO reverse osmosis membrane-treated water as dispersion medium by using the two-step method. To study the different dispersion conditions of nano boron carbide dispersion in water-based fluid,sedimentation stability and rheological characteristics analysis were used to evaluate its dispersion effect. The experimental results showed that dispersant type,mass fraction of dispersant,particle size of nano boron carbide,mass fraction of nano boron carbide could affect stability of solution dispersion. Polyethylene glycol 600 as a dispersant,mass fraction of 0.4%,60nm particle size of nano-boron carbide and mass fraction of 0.8%-0.9%,could achieve stable dispersion of nano boron carbide in water-based fluid.

  10. Using nano hexagonal boron nitride particles and nano cubic silicon carbide particles to improve the thermal conductivity of electrically conductive adhesives

    Science.gov (United States)

    Cui, Hui-wang; Li, Dong-sheng; Fan, Qiong

    2013-01-01

    To satisfy the high electrical and thermal conductivity required for the continuous development of electronic products, nano hexagonal boron nitride (BN) particles and nano cubic silicon carbide (SiC) particles were added into electrically conductive adhesives (ECAs) to improve the thermal conductivity. BN and SiC had little negative effect on the electrical conductivity, but improved the thermal conductivity significantly. When their content was 1.5 wt. %, the thermal conductivity at 100°C, 150°C and 200°C was increased by 71% (100°C), 78% (150°C) and 70% (200°C), and 114% (100°C), 110% (150°C) and 98% (200°C) respectively for BN and SiC comparing with those of the ECAs with no thermal conductive fillers. This method is simple, easy to do, and can be used practically in electronic packaging.

  11. Nanomechanical and in situ TEM characterization of boron carbide thin films on helium implanted substrates: Delamination, real-time cracking and substrate buckling

    Energy Technology Data Exchange (ETDEWEB)

    Framil Carpeño, David, E-mail: david.framil-carpeno@auckland.ac.nz [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand); Ohmura, Takahito; Zhang, Ling [Strength Design Group, Structural Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Leveneur, Jérôme [National Isotope Centre, GNS Science, 30 Gracefield Road, Gracefield, Lower Hutt 5010 (New Zealand); Dickinson, Michelle [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand); Seal, Christopher [International Centre for Advanced Materials, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Kennedy, John [National Isotope Centre, GNS Science, 30 Gracefield Road, Gracefield, Lower Hutt 5010 (New Zealand); Hyland, Margaret [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand)

    2015-07-15

    Boron carbide coatings deposited on helium-implanted and unimplanted Inconel 600 were characterized using a combination of nanoindentation and transmission electron microscopy. Real-time coating, cracking and formation of slip bands were recorded using in situ TEM-nanoindentation, allowing site specific events to be correlated with specific features in their load–displacement curves. Cross-sections through the residual indent impression showed a correlation between pop-outs in the load–displacement curves and coating delamination, which was confirmed with cyclic indentation experiments. Inconel exhibits (-11-1) and (1-1-1) twin variants in its deformed region beneath the indenter, organized in bands with a ladder-like arrangement. The nanomechanical properties of the metal–ceramic coating combinations exhibit a marked substrate effect as a consequence of helium implantation.

  12. Chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    Energy Technology Data Exchange (ETDEWEB)

    1981-01-01

    Aluminum oxide pellets are used in a reactor core as filler or spacers within fuel, burnable poison, or control rods. In order to be suitable for this purpose, the material must meet certain criteria for impurity content. The test methods in the standard are designed to show whether or not a given material meets these specifications. The following analytical procedures are described in detail: boron by titrimetry; separation of boron by mass spectrometry; isotopic composition by mass spectrometry; separation of halides by pyrohydrolysis; fluoride by ion-selective electrode; chloride, bromide, and iodide by amperometric microtitrimetry; trace elements by emission spectroscopy. (JMT)

  13. Ballistic behavior of boron carbide reinforced AA7075 aluminium alloy using friction stir processing–An experimental study and analytical approach

    Institute of Scientific and Technical Information of China (English)

    I. SUDHAKAR; G. MADHUSUDHAN REDDY; K. SRINIVASA RAO

    2016-01-01

    High strength-to-weight ratio of non-ferrous alloys, such as aluminium, magnesium and titanium alloys, are considered to be possible replacement of widely accepted steels in transportation and automobile sectors. Among these alloys, magnesium is self explosive and titanium is costlier, and aluminium is most likely to replace steels. Application of aluminium or its alloys is also thought of as an appropriate replacement in defence field, especially to enhance the easiness in mobility of combat vehicles while maintaining the same standard as that of conventional armour grade steels. Hence most of the investigations have been confined to aluminium or its alloys as base material and open an era of developing the newer composite materials to address the major limitation, i.e. tribological properties. The surface composites can be fabricated by incorporating the ceramic carbides like silicon carbide, carbides of transition metals and oxides of aluminium using surface modification techniques, such as high energy laser melt treatment, high energy electron beam irradiation and thermal spray process which are based on fusion route. These techniques yield the fusion related problems, such as interfacial reaction, pin holes, shrinkage cavities or voids and other casting related defects, and pave the way to need of an efficient technique which must be based on solid state. Recently developed friction stir processing technique was used in the present investigation for surface modification of AA7075 aluminum alloy, which is an alternative to steels. In the present investigation, 160μm sized boron carbide powder was procured and was reduced to 60μm and 30μm using high energy ball mill. Subsequently these powders were used to fabricate the surface composites using friction stir processing. Ballistic performance testing as per the military standard (JIS.0108.01) was carried out. In the present work, an analytical method of predicting the ballistic behavior of surface composites

  14. Carbon-rich icosahedral boron carbides beyond B4C and their thermodynamic stabilities at high temperature and pressure from first principles

    Science.gov (United States)

    Ektarawong, A.; Simak, S. I.; Alling, B.

    2016-08-01

    We investigate the thermodynamic stability of carbon-rich icosahedral boron carbide at different compositions, ranging from B4C to B2C , using first-principles calculations. Apart from B4C , generally addressed in the literature, B2.5C , represented by B10C2p (C-C), where Cp and (C-C) denote a carbon atom occupying the polar site of the icosahedral cluster and a diatomic carbon chain, respectively, is predicted to be thermodynamically stable under high pressures with respect to B4C as well as pure boron and carbon phases. The thermodynamic stability of B2.5C is determined by the Gibbs free energy G as a function of pressure p and temperature T , in which the contributions from the lattice vibrations and the configurational disorder are obtained within the quasiharmonic and the mean-field approximations, respectively. The stability range of B2.5C is then illustrated through the p -T phase diagrams. Depending on the temperatures, the stability range of B2.5C is predicted to be within the range between 40 and 67 GPa. At T ≳ 500 K, the icosahedral Cp atoms in B2.5C configurationally disorder at the polar sites. By investigating the properties of B2.5C , e.g., elastic constants and phonon and electronic density of states, we demonstrate that B2.5C is both mechanically and dynamically stable at zero pressure, and is an electrical semiconductor. Furthermore, based on the sketched phase diagrams, a possible route for experimental synthesis of B2.5C as well as a fingerprint for its characterization from the simulations of x-ray powder diffraction pattern are suggested.

  15. 碳化硼微孔喷嘴的注射成形工艺及其表面质量%Process and Surface Quality of Injection Molded Boron Carbide Nozzle with Micro Multi-holes

    Institute of Scientific and Technical Information of China (English)

    王长瑞; 卢振; 张凯锋; 王振龙

    2012-01-01

    利用粉末注射成形工艺制备碳化硼微孔喷嘴.研究了注射、脱脂和烧结工艺对碳化硼微孔喷嘴的微观形貌和成形质量的影响.结果表明,当模具温度为60℃、注射压力为100MPa、注射温度为175℃的情况下,微孔喷嘴得到良好的填充.脱脂后制品未发现裂纹和翘曲.随着烧结温度的升高,微孔喷嘴的致密度和线性收缩先增加后减小,表面粗糙度先减小后增加,在1950℃烧结后,微孔喷嘴的烧结性能和力学性能最好,致密度、线性收缩、维氏硬度和表面粗糙度值分别为97.1%,18.7%,3580HV和6.17μm.%Boron carbide nozzle with micro multi-holes was fabricated by powder injection molding. The effects of injection molding, debinding, sintering on microstructure and forming quality of boron carbide nozzle were investigated. The results show that boron carbide nozzle can be filled completely with appropriate molding parameters in mold temperature of 60℃ , injection pressure of 100 MPa and nozzle temperature of 175℃. Cracks and warps are not found on the surface of debound product. Densities and linear shrinkages of boron carbide nozzle begin to increase and then decrease with the increasing of sintering temperature, however, the values of surface roughness begin to decrease and then increase. Boron carbide nozzle achieves the best forming and mechanical performances after sintering at 1950℃ of which the density, linear shrinkage, Vickers hardness and value of surface roughness are 97. 1% , 18. 7% , 3580HV and 6. 17pm, respectively.

  16. Effect of Glucose Additives on the Properties of Pressureless-sintered Boron Carbide%葡萄糖助剂对无压烧结碳化硼性能的影响

    Institute of Scientific and Technical Information of China (English)

    袁义鹏; 姜宏伟; 郑友进

    2016-01-01

    采用有机葡萄糖作为烧结助剂提升碳化硼陶瓷的烧结性能.1.5微米碳化硼粉中加入4%葡萄糖,模压成型,在不同温度下烧结,对样品硬度、密度、表面形貌和晶体结构进行测试.实验结果表明:添加4%葡萄糖助剂,在2200℃得到的碳化硼样品密度和硬度高于纯碳化硼2250℃烧结的样品;通过一定的烧结工艺可以使碳进入到碳化硼晶格中,与晶粒间的游离碳共同起到促进碳化硼晶粒的扩散作用,扩散行为完成时存在于空隙中的碳起到钉扎作用,成为增强机制之一.%The sintering properties of boron carbide ceramics were promoted by the organic glucose containing carbon as a sintering aid .In the 1 .5 micron boron carbide pow der ,4%glucose was added into the mould ,and the samples were sintered at different tempera‐tures .No additives sintered samples were compared .Hardness ,density ,surface morpholo‐gy and crystal structure of the samples were tested .The results showed that the density and hardness of boron carbide samples with the addition of 4% glucose obtained at 2200℃were higher than those of pure boron carbide 2250℃ sintered samples .Organic glucose as a sintering aid can improve the liquid phase power in sintering process ,which can be used to prevent the grow th of alumina grain by means of additives or intermediate phase ,w hich can improve the sintering properties of boron carbide at atmospheric pressure .

  17. Electro-explosive alloying of VT6 alloy surface by boron carbide powder with the subsequent electron-beam treatment

    Science.gov (United States)

    Romanov, D. A.; Raykov, S. V.; Gromov, V. E.; Ivanov, Yu F.

    2015-11-01

    The formation of electro-explosive alloying zone with the thickness up to 50 μm has been revealed. It has been shown that it has a gradient structure, characterized by the decrease of carbon and boron concentration with the increase of the distance up to the treatment surface. The subsequent electron-beam treatment of alloying zone leads to flattening of alloying surface relief and is accompanied by the formation of a multilevel structure at the depth up to 30 μm, characterized by the interchange of some layers with a different level of alloying, having structure of a submicro- and nanoscale level.

  18. Submicron-sized boron carbide particles encapsulated in turbostratic graphite prepared by laser fragmentation in liquid medium.

    Science.gov (United States)

    Ishikawa, Yoshie; Sasaki, Takeshi; Koshizaki, Naoto

    2010-08-01

    Submicron-sized B4C spherical particles were obtained by laser fragmentation of large B4C particles dispersed in ethyl acetate. The irradiated surface of large B4C raw particles was heated and melted by laser energy absorption. B4C droplets were then cooled down, and finally B4C spherical particles were obtained. Moreover, each B4C particle obtained was encapsulated in a graphitic layer that is useful for medical functionalization of particles. Thus, obtained B4C particles encapsulated in graphitic layer may have potential uses in boron neutron capture therapy.

  19. A combination method for simulation of secondary knock-on atoms of boron carbide induced by neutron irradiation in SPRR-300

    Science.gov (United States)

    Wu, Jian-Chun; Feng, Qi-Jie; Liu, Xian-Kun; Zhan, Chang-Yong; Zou, Yu; Liu, Yao-Guang

    2016-02-01

    A multiscale sequence of simulation should be used to predict properties of materials under irradiation. Binary collision theory and molecular dynamics (MDs) method are commonly used to characterize the displacement cascades induced by neutrons in a material. In order to reduce the clock time spent for the MD simulation of damages induced by high-energy primary knock-on atoms (PKAs), the damage zones were split into sub-cascade according to the sub-cascade formation criteria. Two well-known codes, Geant4 and TRIM, were used to simulate high-energy PKA-induced cascades in B4C and then produce the secondary knock-on atom (SKA) energy spectrum. It has been found that both high-energy primary knock-on B and C atoms move a long range in the boron carbide. These atoms produce sub-cascades at the tip of trajectory. The energy received by most of the SKAs is <10 keV, which can be used as input to reduce the clock time spent for MD simulation.

  20. Effect of particle size and percentages of Boron carbide on the thermal neutron radiation shielding properties of HDPE/B4C composite: Experimental and simulation studies

    Science.gov (United States)

    Soltani, Zahra; Beigzadeh, Amirmohammad; Ziaie, Farhood; Asadi, Eskandar

    2016-10-01

    In this paper the effects of particle size and weight percentage of the reinforcement phase on the absorption ability of thermal neutron by HDPE/B4C composites were investigated by means of Monte-Carlo simulation method using MCNP code and experimental studies. The composite samples were prepared using the HDPE filled with different weight percentages of Boron carbide powder in the form of micro and nano particles. Micro and nano composite were prepared under the similar mixing and moulding processes. The samples were subjected to thermal neutron radiation. Neutron shielding efficiency in terms of the neutron transmission fractions of the composite samples were investigated and compared with simulation results. According to the simulation results, the particle size of the radiation shielding material has an important role on the shielding efficiency. By decreasing the particle size of shielding material in each weight percentages of the reinforcement phase, better radiation shielding properties were obtained. It seems that, decreasing the particle size and homogeneous distribution of nano forms of B4C particles, cause to increase the collision probability between the incident thermal neutron and the shielding material which consequently improve the radiation shielding properties. So, this result, propose the feasibility of nano composite as shielding material to have a high performance shielding characteristic, low weight and low thick shielding along with economical benefit.

  1. Spark Plasma Sintering of Aluminum-Magnesium-Matrix Composites with Boron Carbide and Tungsten Nano-powder Inclusions: Modeling and Experimentation

    Science.gov (United States)

    Dvilis, E. S.; Khasanov, O. L.; Gulbin, V. N.; Petyukevich, M. S.; Khasanov, A. O.; Olevsky, E. A.

    2016-03-01

    Spark-plasma sintering (SPS) is used to fabricate fully-dense metal-matrix (Al/Mg) composites containing hard ceramic (boron carbide) and refractory metal (tungsten) inclusions. The study objectives include the modeling (and its experimental verification) of the process of the consolidation of the composites consisted of aluminum-magnesium alloy AMg6 (65 wt.%), B4C powder (15 wt.%), and W nano-powder (20 wt.%), as well as the optimization of the composite content and of the SPS conditions to achieve higher density. Discrete element modeling of the composite particles packing based on the particle size distribution functions of real powders is utilized for the determination of the powder compositions rendering maximum mixture packing densities. Two models: a power-law creep model of the high temperature deformation of powder materials, and an empirical logarithmic pressure-temperature-relative density relationship are successfully applied for the description of the densification of the aluminum-magnesium metal matrix powder composite subjected to spark-plasma sintering. The elastoplastic properties of the sintered composite samples are assessed by nanoindentation.

  2. THE RESEARCH OF POROUS BORON CARBIDE MOLDING TECHNOLOGY%多孔碳化硼成型工艺的研究

    Institute of Scientific and Technical Information of China (English)

    李鹏; 陈玉强; 杨金茹

    2011-01-01

    利用有机泡沫浸渍工艺制备了孔径为0.5mm左右的碳化硼多孔预制体,研究了海绵表面预处理及固相含量对挂浆量的影响,通过SEM、XBD对制品进行了表面形貌的观查及物相分析,研究表明海绵的预处理可有效提高挂浆量,浆料固相含量在30~35%vol时浸渍效果最佳。%Using organic foam impregnation process was about 0.5mm in bore diameter boron carbide porous precast body, we studies sponge surface pretreatment and solid content slurry to hang the amount of influence, through the SEM, XRD to samples of the surface morphology observation and physical phase analysis.The research shows that the pretreatment of the sponge can effectively increase the quantity size, hang pulp solid content at 30 - 35% consider best effect.

  3. Microstructure and pitting corrosion of armor grade AA7075 aluminum alloy friction stir weld nugget zone – Effect of post weld heat treatment and addition of boron carbide

    Directory of Open Access Journals (Sweden)

    P. Vijaya Kumar

    2015-06-01

    Full Text Available Friction stir welding (FSW of high strength aluminum alloys has been emerged as an alternative joining technique to avoid the problems during fusion welding. In recent times FSW is being used for armor grade AA7075 aluminum alloy in defense, aerospace and marine applications where it has to serve in non uniform loading and corrosive environments. Even though friction stir welds of AA7075 alloy possess better mechanical properties but suffer from poor corrosion resistance. The present work involves use of retrogression and reaging (RRA post weld heat treatment to improve the corrosion resistance of welded joints of aluminum alloys. An attempt also has been made to change the chemical composition of the weld nugget by adding B4C nano particles with the aid of the FSW on a specially prepared base metal plate in butt position. The effects of peak aged condition (T6, RRA and addition of B4C nano particles on microstructure, hardness and pitting corrosion of nugget zone of the friction stir welds of AA7075 alloy have been studied. Even though RRA improved the pitting corrosion resistance, its hardness was slightly lost. Significant improvement in pitting corrosion resistance was achieved with addition of boron carbide powder and post weld heat treatment of RRA.

  4. Tribological and thermal stability study of nanoporous amorphous boron carbide films prepared by pulsed plasma chemical vapor deposition

    Science.gov (United States)

    Liza, Shahira; Ohtake, Naoto; Akasaka, Hiroki; Munoz-Guijosa, Juan M.

    2015-06-01

    In this work, the thermal stability and the oxidation and tribological behavior of nanoporous a-BC:H films are studied and compared with those in conventional diamond-like carbon (DLC) films. a-BC:H films were deposited by pulsed plasma chemical vapor deposition using B(CH3)3 gas as the boron source. A DLC interlayer was used to prevent the a-BC:H film delamination produced by oxidation. Thermal stability of a-BC:H films, with no delamination signs after annealing at 500 °C for 1 h, is better than that of the DLC films, which completely disappeared under the same conditions. Tribological test results indicate that the a-BC:H films, even with lower nanoindentation hardness than the DLC films, show an excellent boundary oil lubricated behavior, with lower friction coefficient and reduce the wear rate of counter materials than those on the DLC film. The good materials properties such as low modulus of elasticity and the formation of micropores from the original nanopores during boundary regimes explain this better performance. Results show that porous a-BC:H films may be an alternative for segmented DLC films in applications where severe tribological conditions and complex shapes exist, so surface patterning is unfeasible.

  5. Influence of trace boron on the morphology of titanium carbide in an Al-Ti-C-B master alloy

    International Nuclear Information System (INIS)

    The influence of trace B (boron) element on the morphology of TiC crystals in an Al-Ti-C-B master alloy prepared by a melt reaction method has been investigated in this paper. The morphology and chemical composition of TiC crystals are characterized from X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersion spectroscopy (EDS), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analyses. It is found that both TiC hexagonal platelet and TiC polyhedron have formed in the Al-Ti-C-B master alloy. Furthermore, a trace amount of B element is found in TiC hexagonal platelets evidenced by the EDS spectrum. However, the SAED pattern confirms that the crystal structure of TiC has not changed. The formation and growth mechanism of the TiC hexagonal platelet have been discussed. It is considered that the trace B element in the aluminum melt promotes the transformation of TiC from polyhedron to hexagonal platelet at the initial growth stage.

  6. Quantification of mass-specific laser energy input converted into particle properties during picosecond pulsed laser fragmentation of zinc oxide and boron carbide in liquids

    Energy Technology Data Exchange (ETDEWEB)

    Lau, Marcus; Barcikowski, Stephan, E-mail: stephan.barcikowski@uni-due.de

    2015-09-01

    Graphical abstract: - Highlights: • Highly defect-rich zinc oxide is obtained by pulsed laser fragmentation in liquids (PLFL). • Bandgap of semiconductor particles can be linearly controlled, simply by the laser energy dose. • Upscaling parameters are derived, that are mass-specific energy input and fragmentation fluence threshold. • Transferability is shown for one of the hardest material known, fabricating crystalline boron carbide nanoparticles. • Conclusions about laser fragmentation mechanisms occurring in liquids are drawn. - Abstract: Pulsed laser fragmentation in liquids is an effective method to fabricate organic, metal or semiconductor nanoparticles by ablation of suspended particles. However, modelling and up-scaling of this process lacks quantification of the laser energy required for a specific product property like particle diameter of the colloid or bandgap energy of the fabricated nanoparticles. A novel set-up for defined laser energy dose in a free liquid jet enables mass-specific energy balancing and exact threshold determination for pulsed laser fragmentation. By this technique laser energy and material responses can be precisely correlated. Linear decrease of the particle diameter and linear increase of the bandgap energy with mass-specific laser energy input has been observed for the examples of ZnO and B{sub 4}C particles. Trends are analysed by density gradient centrifugation, electron microscopy, UV–vis and X-ray diffraction analysis of the crystal structure. The study contributes to quantitative model parameters for up-scaling and provides insight into the mechanisms occurring when suspended particles are irradiated with pulsed laser sources.

  7. Study of boron carbide evolution under neutron irradiation; Contribution a l'etude de l'evolution du carbure de bore sous irradiation neutronique

    Energy Technology Data Exchange (ETDEWEB)

    Simeone, D. [CEA/Saclay, Dept. de Mecanique et de Technologie (DMT), 91 - Gif-sur-Yvette (France)]|[Universite Blaise Pascal, Clermont-Ferrand II, (CNRS), 63 - Aubiere (France)

    1999-07-01

    Owing to its high neutron efficiency, boron carbide (B{sub 4}C) is used as a neutron absorber in control rods of nuclear plants. Its behaviour under irradiation has been extensively studied for many years. It now seems clear that brittleness of the material induced by the {sup 10}B(n,{alpha}){sup 7}Li capture reaction is due to penny shaped helium bubbles associated to a high strain field around them. However, no model explains the behaviour of the material under neutron irradiation. In order to build such a model, this work uses different techniques: nuclear microprobe X-ray diffraction profile analysis and Raman and Nuclear Magnetic Resonance Spectroscopy to present an evolution model of B{sub 4}C under neutron irradiation. The use of nuclear reactions produced by a nuclear microprobe such as the {sup 7}Li(p,p'{gamma}){sup 7}Li reaction, allows to measure lithium profile in B{sub 4}C pellets irradiated either in Pressurised Water Reactors or in Fast Breeder Reactors. Examining such profiles enables us to describe the migration of lithium atoms out of B{sub 4}C materials under neutron irradiation. The analysis of X-ray diffraction profiles of irradiated B{sub 4}C samples allows us to quantify the concentrations of helium bubbles as well as the strain fields around such bubbles.Furthermore Raman spectroscopy studies of different B{sub 4}C samples lead us to propose that under neutron irradiation. the CBC linear chain disappears. Such a vanishing of this CBC chain. validated by NMR analysis, may explain the penny shaped of helium bubbles inside irradiated B{sub 4}C. (author)

  8. Effect on Graphite Substrate to Formation of Boron Carbide/Carbon Composite Nanoropes%石墨基底对碳/碳化硼复合纳米绳形成的影响

    Institute of Scientific and Technical Information of China (English)

    马淑芳; 梁建; 赵君芙; 孙晓霞; 许并社

    2009-01-01

    利用邻碳硼烷(C2H12B10)作为反应原料,二茂铁(C10H10Fe)作为催化剂,通过化学气相沉积法在石墨基片上生长出一种新颖的碳化硼纳米绳.用X射线衍射仪分析纳米绳的相结构,用场发射扫描电子显微镜(FESEM)和高分辨透射电子显微镜(HRTEM)观察纳米绳的微观形貌和结构,结果发现纳米绳的中心部分是碳化硼纳米线,在线的表面有非晶碳绳结,故纳米绳为碳/碳化硼复合物.研究了绳状产物的生长机理,表明石墨基片对产物的形成有至关重要的作用.%A type of novel boron carbide nanoropes has been grown on the graphite substrate by chemical vapor deposition method. In this study, o-carborane(C2H12B10) powder was used as a precursor and ferrocene(C10H10Fe) as a catalyst. Phase, microstructures and components of these nanoropes were characterized by X-ray diffractometer (XRD), scan electron microscopy(SEM) and high-resolution transmission electron microscopy(HRTEM) as well as energy dispersive X-ray spectroscopy(EDS). It has been found that the boron carbide nanoropes have such a structure of a single crystal wire in the centre of ropes partially covered with amorphous carbon knots. Growth mechanism of boron carbide nanoropes was discussed. It has demonstrated that the substrate of graphite plays a significant role in the formation of nanoropes.

  9. Influence of sputtering power on components and mechanical properties of boron carbide films%溅射功率对碳化硼薄膜组分与力学性能的影响

    Institute of Scientific and Technical Information of China (English)

    张玲; 何智兵; 李俊; 许华; 谌家军

    2013-01-01

    Boron carbide films were fabricated by radio frequency magnetron sputtering at different sputtering powers.The structure and components of the boron carbide films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.Using MTS Nano Indenter XP with CSM method,the hardness and modulus of the boron carbide films were analyzed.The results show that B prefers to combining with C to form B-C bond as the RF power increases.When the sputtering power reaches 250 W,the number of B-C bonds is the most,and the atomic concentration ratio between B and C reaches to the maximum of 5.66.Both the hardness and modulus of the boron carbide films increase firstly and then decrease with the sputtering powers increasing.Both of them reach to the maximum of 28.22 GPa and 314.62 GPa,respectively.%采用射频磁控溅射技术,在不同溅射功率条件下制备了碳化硼薄膜,并用X射线光电子能谱(XPS)和傅里叶变换红外吸收光谱(FT-IR)对碳化硼薄膜的组分进行了定量表征,分析了功率变化对碳化硼组分的影响.利用纳米压入仪通过连续刚度法(CSM)对碳化硼薄膜的硬度和模量等力学性能进行了分析.研究表明:随着功率的增大,硼与碳更易结合形成B-C键,在功率增大到250 W时,B-C键明显增多;在250 W时,硼与碳的原子分数比出现了最大值5.66;碳化硼薄膜的硬度与模量都随功率的增大呈现出先增大后减小的趋势,且在250 W时均出现了最大值,分别为28.22 GPa和314.62 GPa.

  10. Reaction Sintering of Boron Carbide/silicon Carbide Green Body and Sintered Body Performance Test and Analysis%反应烧结碳化硼/碳化硅坯体和烧结体的性能测试及分析

    Institute of Scientific and Technical Information of China (English)

    尹茜; 张玉军; 于庆华

    2013-01-01

    With polyvinyl pyrrolidone as boron carbide and carbon black dispersant; Four methylammonium hydroxide as silicon carbide dispersion agent,respectively with acrylamide,N,N'-methylene diacrylamide and a crosslinking agent,the gel casting process for preparation of boron carbide/carbide body,after high temperature sintering,preparation of boron carbide/silicon carbide sintered body specimen.The results show that:the green body bending strength with solid content increases,when the solid content is 55vo1% strength reaches 24.3 MPa.To some extent,fracture toughness can be improved increasing with the content of B4C.When the content of B4C is 10wt%,the maximum fracture toughness of composite is 5.07 MPa · m1/2 The hardness of sintered bodies increases with the increasing of B4C content.The hardness is as high as 94.5 HRA when the content of B4C is 20wt%.%以聚乙烯吡咯烷酮作碳化硼和炭黑分散剂;四甲基氢氧化铵作碳化硅分散剂,分别以丙烯酰胺、N,N'-亚甲基双丙烯酰胺为单体和交联剂,采用凝胶注模工艺制备碳化硼/碳化硅坯体,再经过高温烧结,制备碳化硼/碳化硅烧结体试样.通过对凝胶注模成型反应烧结碳化硼/碳化硅坯体及烧结试样的性能研究表明:坯体的弯曲强度随着固含量的增加而增大,当固含量为55vol%时强度达到24.3 MPa.烧结体的断裂韧性随碳化硼含量的增加先提高后降低.最佳碳化硼含量为10wt%,此时断裂韧性可达到最大值5.07 MPa·m1/2.烧结体的硬度随着碳化硼含量的增加而增加,当碳化硼含量达20wt%时,硬度达到94.5HRA.

  11. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

    International Nuclear Information System (INIS)

    The cold boron carbide free radical (BC X 4Σ−) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B 4Σ−–X 4Σ− and E 4Π–X 4Σ− band systems of both 11BC and 10BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E–X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B 4Σ− excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E 4Π–X 4Σ− 0-0 and 1-0 bands of 11BC. The E–X 0-0 band of 10BC was found to be severely perturbed. The ground state main electron configuration is …3σ24σ25σ11π22π0 and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals

  12. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

    Energy Technology Data Exchange (ETDEWEB)

    Sunahori, Fumie X. [Department of Chemistry and Physics, Franklin College, Franklin, Indiana 46131 (United States); Nagarajan, Ramya; Clouthier, Dennis J., E-mail: dclaser@uky.edu [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States)

    2015-12-14

    The cold boron carbide free radical (BC X {sup 4}Σ{sup −}) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B {sup 4}Σ{sup −}–X {sup 4}Σ{sup −} and E {sup 4}Π–X {sup 4}Σ{sup −} band systems of both {sup 11}BC and {sup 10}BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E–X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B {sup 4}Σ{sup −} excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E {sup 4}Π–X {sup 4}Σ{sup −} 0-0 and 1-0 bands of {sup 11}BC. The E–X 0-0 band of {sup 10}BC was found to be severely perturbed. The ground state main electron configuration is …3σ{sup 2}4σ{sup 2}5σ{sup 1}1π{sup 2}2π{sup 0} and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  13. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

    Science.gov (United States)

    Sunahori, Fumie X.; Nagarajan, Ramya; Clouthier, Dennis J.

    2015-12-01

    The cold boron carbide free radical (BC X 4Σ-) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B 4Σ--X 4Σ- and E 4Π-X 4Σ- band systems of both 11BC and 10BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B 4Σ- excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E 4Π-X 4Σ- 0-0 and 1-0 bands of 11BC. The E-X 0-0 band of 10BC was found to be severely perturbed. The ground state main electron configuration is …3σ24σ25σ11π22π0 and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  14. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical.

    Science.gov (United States)

    Sunahori, Fumie X; Nagarajan, Ramya; Clouthier, Dennis J

    2015-12-14

    The cold boron carbide free radical (BC X (4)Σ(-)) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B (4)Σ(-)-X (4)Σ(-) and E (4)Π-X (4)Σ(-) band systems of both (11)BC and (10)BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B (4)Σ(-) excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E (4)Π-X (4)Σ(-) 0-0 and 1-0 bands of (11)BC. The E-X 0-0 band of (10)BC was found to be severely perturbed. The ground state main electron configuration is …3σ(2)4σ(2)5σ(1)1π(2)2π(0) and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  15. Van Hove singularities of some icosahedral boron-rich solids by differential reflectivity spectra

    Science.gov (United States)

    Werheit, Helmut

    2015-09-01

    Differential reflectivity spectra of some icosahedral boron rich solids, β-rhombohedral boron, boron carbide and YB66-type crystals, were measured. The derivatives yield the van Hove singularities, which are compared with results obtained by other experimental methods.

  16. Scandium carbides/cyanides in the boron cage: computational prediction of X@B80 (X = Sc2C2, Sc3C2, Sc3CN and Sc3C2CN).

    Science.gov (United States)

    Jin, Peng; Liu, Chang; Hou, Qinghua; Li, Lanlan; Tang, Chengchun; Chen, Zhongfang

    2016-08-01

    As the first study on metal carbide/cyanide boron clusterfullerenes, the geometries, energies, stabilities and electronic properties of four novel scandium cluster-containing B80 buckyball derivatives, namely Sc2C2@B80, Sc3C2@B80, Sc3CN@B80 and Sc3C2CN@B80, were investigated by means of density functional theory computations. The rather favorable binding energies, which are very close to those of the experimentally abundant carbon fullerene analogues, suggest a considerable possibility to realize these doped boron clusterfullerenes. Their intracluster and cluster-cage bonding natures were thoroughly revealed by various theoretical approaches. In contrast to carbon clusterfullerenes, in which the encaged non-metal atoms mainly play a stabilizing role in the metal clusters, the encapsulated carbon and nitrogen atoms inside the B80 cage covalently bond to the boron framework, resulting in strong cluster-cage interactions. Furthermore, infrared spectra and (11)B nuclear magnetic resonance spectra were simulated and fingerprint peaks were proposed to assist future experimental characterization. PMID:27424658

  17. Determination of total carbon in boron carbide by high frequency combustion-infrared absorption method%高频燃烧红外吸收法测定碳化硼中总碳

    Institute of Scientific and Technical Information of China (English)

    郭飞飞; 杨植岗; 王学华; 徐井然; 王朝亮; 黄小峰; 王蓬

    2012-01-01

    采用高频燃烧红外吸收法,建立了测定碳化硼中总碳量的分析方法.对称样量、助熔剂进行了试验.结果表明,当称样量为0.02 g、助熔剂为0.2 g Fe+0.02 g B4C+0.2 g Fe+1.5gW时,测定效果最佳.以CaCO3为校准物质,采用本法对碳化硼样品中的碳进行测定,结果与管式炉燃烧红外吸收法的相对偏差为0.09%,小于JIS R2015-2007标准规定的允许误差0.20%,相对标准偏差为0.37%.%A determination method of total carbon in boron carbide was established by high-frequency combustion infrared absorption method. Sample weight and flux used were discussed. It was found that the optimal experimental conditions were sample weight of 0. 02 g and flux of 0. 02g Fe +0. 02 g B4C + 0. 2g Fe +1. 5 g W. The method was used for determination of carbon in boron carbide with CaCO3 as calibration materials. The relative error of the results with those obtained by tubular furnace combustion-infrared absorption method was 0. 09 % which is smaller than the allowable error 0. 20 % in JIS R2015. The relative standard deviation (RSD) was 0. 37 %.

  18. STUDY ON THE PREPARATION OF BORON CARBIDE POWER BY CARBOTHERMAL REDUCTION METHOD%碳热还原法制备碳化硼粉末的工艺研究

    Institute of Scientific and Technical Information of China (English)

    于国强; 刘维良; 欧阳瑞丰; 李友宝

    2012-01-01

    采用碳热还原法制备了碳化硼粉末样品,讨论了硼碳比、煅烧合成和粉碎过程等工艺参数对其粉末性能的影响。借助XRD分析手段测试了其成分,并用化学方法分析了粉末的总碳含量,用激光粒度分布仪测试了其粒度分布。实验结果表明:以工业用硼酸和炭黑为原料,在1700~1850℃、保温0.5~1h煅烧合成能制得纯度较高的碳化硼粉末。其总碳含量为20.7%,接近理论值。中位径为32.56μm,经球磨粉碎后,其中位径可以达到2.42μm。%The boron carbide power was manufactured by carbothermal reduction method. The parameters which may have great influence to its performance are also discussed. The composition was analyzed by X-ray diffraction (XRD) . The total carbon content was analyzed by chemical method. The particle size distribution was tested by laser particle size analyzer. Experimental results show that when the boric acid and carbon black were selected as starting materials, sintered at 1700-1850℃ for 0.5-1h, high purity boron carbide power can be got. The total carbon content was 20.7%, which is close to the theoretical value. After milling, the median diameter can reach 2.42 μ m from 32.56 μm.

  19. Comparison of the surface morphologies of boron carbide coatings prepared by bouncing agitation and rolling agitation%跳动及滚动激励制备的碳化硼涂层表面形貌的对比

    Institute of Scientific and Technical Information of China (English)

    王自磊; 廖志君; 陶勇; 于小河; 林涛; 伍登学; 卢铁城

    2011-01-01

    Boron carbide(B4C) coatings are deposited on the glass and steel mandrels using two agitation methods, rolling agitation and bouncing agitation, by electron beam evaporation.Various surface morphologies of the coatings are investigated through the scanning electron microscope.It is found that the surface deposited by rolling agitation has fewer cracks and better compactness, and the particles grow better than that deposited by bouncing agitation.From a comparison of two kinds of B4C coatings, one can find that rolling agitation has more advantages than bouncing agitation in fabricating boron carbide coatings.%利用电子束蒸发技术蒸发碳化硼,通过弹跳激励和滚动激励两种方案来随机滚动小球,从而分别在玻璃和钢球心轴上制备了碳化硼涂层.采用扫描电子显微镜对涂层表面形貌进行了分析.同采用弹跳激励制备的涂层相比,在用滚动激励制备的涂层表面不存在裂纹和微粒脱落现象,其微粒生长的更大,相互接合的更致密.经对比证明,在制备碳化硼涂层上,滚动激励装置优于跳动激励装置.

  20. Sintered silicon carbide

    International Nuclear Information System (INIS)

    A sintered silicon carbide body having a predominantly equiaxed microstructure consists of 91 to 99.85% by weight of silicon carbide at least 95% of which is the alpha phase, up to 5.0% by weight carbonized organic material, 0.15 to 3.0% of boron, and up to 1.0% by weight additional carbon. A mixture of 91 to 99.85 parts by weight silicon carbide having a surface area of 1 to 100 m2/g, 0.67 to 20 parts of a carbonizable organic binder with a carbon content of at least 33% by weight, 0.15 to 5 parts of a boron source containing 0.15 to 3.0 parts by weight boron and up to 15 parts by weight of a temporary binder is mixed with a solvent, the mixture is then dried, shaped to give a body with a density of at least 1.60 g/cc and fired at 1900 to 22500C to obtain an equiaxed microstructure. (author)

  1. 铝基碳化硼材料中子屏蔽性能的蒙特卡罗模拟%The Monte Carlo simulation of neutron shielding performance of boron carbide reinforced with aluminum composites

    Institute of Scientific and Technical Information of China (English)

    戴春娟; 刘希琴; 刘子利; 刘伯路

    2013-01-01

    Three groups of neutron shielding experiments were set up to study the shielding performance of B4C/Al composite, using the Monte-Carlo method. We have made the following changes: the content of boron carbide 20%-40%, neutron energy 200 eV-15 keV, material thickness 0.3-2 cm, so that we can draw the conclusions: the content of boron carbide and neutron transmission coefficient show a linear relation, with a big drop; under the same neutron energy, the neutron-shielding qualities of simulated specimens are for better than polyethylene boron carbide at the same content of B4C and water, copper, and concrete at the same thickness; an exponential decline relationship is exhibited by material thickness and neutron transmission coefficient, which change greatly with the increase in unit material thickness; the content of boron affects the thermal neutron transmission coefficient seriously. In the thermal neutron energy region, the change of per unit neutron energy(100 eV) has a big influence on neutron transmission coefficient. In the slow neutron energy region, the influence is small.%  采用蒙特卡罗方法,运用 MCNP4C 程序研究了碳化硼含量20%-40%、中子能量200 eV-15 keV、材料厚度0.3-2 cm 对 B4C/Al 复合材料中子屏蔽性能的影响.结果表明:碳化硼含量与中子透射系数呈一次线性下降关系;同含量的碳化硼, B4C/Al 材料的中子屏蔽效果要大大优于聚乙烯碳化硼材料;在等厚度条件下,模拟试样 B20等的中子屏蔽效果要优于水、铜、混凝土等常规屏蔽材料;材料厚度与中子透射系数呈指数下降关系,且单位厚度的增加对中子透射系数改变很大;含硼量对热中子透射系数影响很大;在热中子能区,中子每单位能量的变化对中子透射系数改变较大;在慢中子能区,中子每单位能量的变化对中子透射系数改变很小.

  2. Modifications of multi-wall carbon nanotubes with B-containing vapor and their effects on the properties of boron carbide matrix nanocomposites.

    Science.gov (United States)

    Herth, S; Miranda, D; Doremus, R H; Siegel, R W

    2008-06-01

    Multi-wall carbon nanotubes were modified by heating them together with elemental boron powder. B4C crystals grew on the surfaces of the nanotubes, and electron diffraction patterns showed an orientation dependence of the surface B4C and the underlying carbon in the nanotubes. There was no reaction of the nanotubes with solid B2O3 alone. Composites of the modified nanotubes in a B4C matrix showed a small increase of density over sintered B4C.

  3. 碳化硼五次孪晶纳米线的结构弛豫现象研究%Investigation on the structural relaxation of boron carbide five-fold twinned nanowires

    Institute of Scientific and Technical Information of China (English)

    付新; 袁俊

    2011-01-01

    Interface and defects are the important factors controlling the properties of nanoscale materials. Electron microscopy provides comprehensive characterization methods for revealing these nanostructures. Combining systematic electron diffraction analysis and dark field imaging, the internal defects related to the elastic stress relaxation for accommodating the 5° angular excess of boron carbide fivefold twinned nanowires has been analyzed. Meanwhile, a structural relaxation model has been proposed, that is the shifting of twinning axis towards the nanowire periphery which results in the uncompleted cyclically twinned structure with 3 single crystalline segments. Statistic analysis indicates that this structural relaxation is rarely happened in boron carbide five-fold twinned nanowires synthesized by a solid-state reaction at 1100 ℃ , that probably because of the emergence of interface and surfaces with higher energy induced by the lost of the two single crystalline segments and the shift of twinning axis, respectively.%通过透射电子显微学方法研究纳米材料内部结构有助于理解界面与缺陷对纳米材料性能的影响.在碳化硼五次孪晶纳米线体系中,为了缓解5°角度过剩引起的五次孪晶轴心区域的弹性应变能,在纳米线内部会产生一些结构缺陷.本文通过系列电子衍射分析结合暗场成像技术揭示了碳化硼五次循环孪晶纳米线中的一种结构弛豫模式.孪晶轴向纳米线边缘偏移从而导致其中2片单晶结构单元的缺失,形成仅具有3个单晶结构单元的非完整循环孪晶结构.统计分析发现此类结构弛豫现象少量存在于1100C固相烧结合成的碳化硼五次孪晶纳米线中,从能量角度定性分析表明这可能与该结构弛豫发生过程中会产生具有较高能量的界面及表面有关.

  4. Preparation of Polycrystalline Cubic Boron Nitride Compact by Cemented Carbide High-Pressure Infiltration%硬质合金高压熔渗制备聚晶立方氮化硼复合片

    Institute of Scientific and Technical Information of China (English)

    贾洪声; 鄂元龙; 李海波; 汪尹强; 贾晓鹏; 马红安; 郑友进

    2014-01-01

    Under high temperature and high pressure conditions (HPHT, 5.2GPa, 1450℃),homogeneous Polycrystalline Cubic Boron Nitride (PcBN)compact ofΦ15 × 5 mm has been synthesized through the cemented carbide high pressure in situ melting infil-tration method.The structure morphology and phase composition of PcBN compact has been investigated through scanning electron microscope (SEM),X-radial Diffractometer (XRD)and Energy Disperse Spectroscopy (EDS).It's mechanism of composite interface has also been discussed.The experiment result shows that the WC and Co in the cemen-ted carbide (WC-Co)substrate spread into Cubic Boron Nitride layer through melting in-filtration.And the binding phase of WC,MoCoB and Co3 W3 C facilitate the interface re-combination of the PcBN compact,hence a compact"concrete"structure has been formed on the PcBN layer.%在高温高压条件下(HPHT,5.2 GPa,1450℃),通过硬质合金基体的高压原位熔渗法,制备了质地均匀的Φ15×5 mm的聚晶立方氮化硼(PcBN)复合片。采用扫描电子显微镜(SEM)、X 射线衍射仪(XRD)、能谱仪(EDS)等考察了PcBN复合片的组织形貌及物相成分,并对其界面复合机理进行了探讨。实验结果表明,硬质合金(WC-Co)基体中 WC 及 Co 通过熔渗扩散到立方氮化硼(cBN)层,通过 WC、MoCoB、Co3 W3 C等粘结相,实现了PcBN复合片的界面复合,PcBN层形成致密的“混凝土”结构。

  5. Jaguar Procedures for Detonation Behavior of Explosives Containing Boron

    Science.gov (United States)

    Stiel, L. I.; Baker, E. L.; Capellos, C.

    2009-12-01

    The Jaguar product library was expanded to include boron and boron containing products by analysis of Available Hugoniot and static volumetric data to obtain constants of the Murnaghan relationships for the components. Experimental melting points were also utilized to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX—boron mixtures calculated with these relationships using Jaguar are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that the boron does not react near the detonation front or that boron mixtures exhibit eigenvalue detonation behavior (as shown by some aluminized explosives), with higher detonation velocities at the initial points. Analyses of calorimetric measurements for RDX—boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the detonation properties of the formulation.

  6. Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O

    Science.gov (United States)

    Slack, G. A.; Morgan, K. E.

    2015-09-01

    Electron deficient and non-deficient boron compounds are discussed as potential thermoelectric generator materials. Particular attention is paid to carbon-doped beta-boron, high-carbon boron carbide, and the alpha-boron derivative compound boron suboxide. Stoichiometric B6O shows some promise, and may have a higher ZT than the other two compounds. Carbon saturated beta-boron appears to have a higher ZT than undoped samples. Carbon saturated boron carbide at B12C3 does exist. Its thermoelectric behavior is unknown.

  7. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  8. Stereology of carbide phase in modified hypereutectic chromium cast iron

    Directory of Open Access Journals (Sweden)

    J. Suchoń

    2010-04-01

    Full Text Available In paper are presented results of studies of carbide phase stereology modified hypereutectic wear resistance chromium cast iron which contains carbon about 3,5% and chromium about 25%. Three substances were applied to the modification: boron carbide (B4C, ferroniobium (FeNb and mixture of ferroniobium and rare-earth (RE. The measurements of geometrical features of carbides were conducted on microsection taken from castings wich were cooled with various velocities.

  9. Stereology of carbide phase in modified hypereutectic chromium cast iron

    OpenAIRE

    J. Suchoń; A. Studnicki; M. Przybył

    2010-01-01

    In paper are presented results of studies of carbide phase stereology modified hypereutectic wear resistance chromium cast iron which contains carbon about 3,5% and chromium about 25%. Three substances were applied to the modification: boron carbide (B4C), ferroniobium (FeNb) and mixture of ferroniobium and rare-earth (RE). The measurements of geometrical features of carbides were conducted on microsection taken from castings wich were cooled with various velocities.

  10. Influence of Vanadium and Boron Additions on the Microstructure, Fracture Toughness, and Abrasion Resistance of Martensite-Carbide Composite Cast Steel

    Directory of Open Access Journals (Sweden)

    Waleed Elghazaly

    2016-01-01

    Full Text Available High chromium cast steel alloys are being used extensively in many industrial services where dry or wet abrasion resistance is required. Such steel castings are demanded for cement, stoneware pipes, and earth moving industries. In this research, five steel heats were prepared in 100 kg and one-ton medium frequency induction furnaces and then sand cast in both Y-block and final impact arm spare parts, respectively. Vanadium (0.5–2.5% and boron (120–150 ppm were added to the 18Cr-1.9C-0.5Mo steel heats to examine their effects on the steel microstructure, mechanical properties especially impact, fracture toughness and abrasion resistance. Changes in the phase transformation after heat treatment were examined using inverted, SEM-EDX microscopy; however, the abrasion resistance was measured in dry basis using the real tonnage of crushed and milled stoneware clay to less than 0.1 mm size distribution.

  11. Influence of technology parameter on resistivity of boron carbide composities%工艺因素对碳化硼复合材料电阻率的影响

    Institute of Scientific and Technical Information of China (English)

    孟德川; 王宁会; 李国锋

    2014-01-01

    The influence of technology parameter on resistivity of boron carbide/butyl rubber composites during the process of preparation was introduced.The resistivity dependency of different batches and the process of vulcanization and mixing are analyzed by preseting electrode in the composites.The results showed that:some difference of technology in the manufacturing process,the time and temperature of vulcanization,the change of mixing time and the rotor speed will bring obvious change of the conductive network structure.The change will influence the resistivity and the conductive property of composites.%对碳化硼/丁基橡胶复合材料制备过程中工艺因素对电阻率的影响进行了研究,利用在复合材料中预置电极测量电阻率的方法分析了不同批次、硫化和混炼过程对复合材料电阻率的影响。结果表明复合材料在制作过程中,工艺微小的差异、硫化时间和温度、混炼时间和辊筒速度的变化都会带来复合材料中导电网络结构的明显变化,使得复合材料的电阻率和导电性能有较为明显的改变。

  12. 含碳化硼的吸收和屏蔽中子辐射涂料的研究%Boron Carbide Containing Paint Absorbing and Shielding Neutron Radiation

    Institute of Scientific and Technical Information of China (English)

    黄益平; 冯惠生; 梁璐; 徐姣; 张卫江

    2011-01-01

    对碳化硼(B4C)/环氧树脂涂料合成工艺进行研究,制得一种以793树脂作为固化剂的能屏蔽和吸收中子辐射的涂料.对B4C/环氧树脂涂料的成膜条件及不同含量B4C涂料的硬度、抗冲击性、附着力和柔韧性等物理机械性能进行测试研充结果表明,含有30% B4C的环氧树脂涂料的总体机械性能最佳.在此基础上,考察了不同涂膜厚度下B4C/环氧树脂涂料的防中子辐射的性能,薄膜厚度超过300 μm时,可以有效屏蔽中子射线.%The synthesis technology of boron carbide (B4C)/epoxy resin paint was investigated, and the paint with the ability of absorbing and shielding the neutron radiation, solidified by 793 resin, was obtained. The film-forming conditions of B4C / epoxy resin paint were treated; meanwhile, the relationship between the different contents of B4C in the paint and hardness, impact resistance, adhesion, flexibility and other physical testing of mechanical properties was studied. The conclusion was obtained that the overall machinery of B4C/epoxy paint has better performance with 30% B4C. Furthermore, The anti-neutron radiation performance of B4C/epoxy paint with different film thicknesses was also examined. Results show that effective neutron radiation shielding can be achieved when the film thickness exceeds 300 nm.

  13. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  14. Composition and microhardness of CAE boron nitride films

    International Nuclear Information System (INIS)

    The paper deals with boron nitride produced by cathodic arc evaporation techniques.The films were applied on titanium and cemented carbide substrates. Their characterization was carried out using X-ray diffraction and Knoop microhardness tests. Demonstrated are the high properties of two-phase films, containing β (cubic) and γ (wurtzitic) modifications of boron nitride. (author). 7 refs., 1 fig., 3 tabs

  15. Development of Boron Carbide Pellet for CEFR

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Many shielding subassemblies which contain B4C absorber material are arranged outside the reflecting subassemblies in China experimental fast reactor (CEFR). A hot press process has been adopted for preparing B4C pellet. The B4C powder is synthesized by boric acid and carbon black. The B4C pellet is fabricated by cold press, hot press and sintering, precision working, cleaning surface and drying. Among those processes, hot press process is very important because of its

  16. Processability of Nickel-Boron Nanolayer Coated Boron Carbide

    OpenAIRE

    Zhu, Xiaojing

    2008-01-01

    This dissertation work focuses on the processability improvement of B4C, especially the compaction and sintering improvement of B4C by applying a Ni-B nanolayer coating on individual B4C particles. A modified electroless coating procedure was proposed and employed to coat nanometer Ni-B layer onto micron-sized B4C particles. The thickness was able to be tuned and controlled below 100 nm. Key parameters, including the amount of nickel source, the amount of the surface activation agent (PdCl...

  17. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    Science.gov (United States)

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  18. The influence of chosen modifiers on stereological parameters of carbides of chromium cast iron

    OpenAIRE

    A. Studnicki; J. Suchoń

    2011-01-01

    The results of investigations of stereological carbides in the modified wear resistance chromium cast iron resistant were introduced in the article. There were following elements: boron, niobium, vanadium, cerium and lanthanum (RE), nitrogen in the composition of modifiers. The influence of used modifiers on such stereological parameters of carbides as: size, perimeter, shape coefficient and volume fraction was showed in tables and on diagrams.

  19. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  20. WAYS TO INCREASE THE OPERATIONAL CHARACTERISTICS OF CAST PRODUCTS WITH BORON

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2012-01-01

    Full Text Available It is shown that for improvement of physical and chemical properties of cast products, exploited inconditions of intensive contact with the abrasive environment, boron carbide of great interest.

  1. Boron-Filled Hybrid Carbon Nanotubes.

    Science.gov (United States)

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  2. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  3. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  4. Are there bipolarons in icosahedral boron-rich solids?

    Science.gov (United States)

    Werheit, H

    2007-05-01

    The charge transport of boron carbide, often incorrectly denoted as B(4)C, has been controversially discussed. It is shown that the bipolaron hypothesis is not compatible with numerous experimental results. In particular, the determined real microstructure of boron carbide and its related electronic properties disprove several assumptions, which are fundamental to the bipolaron hypothesis. In contrast, the actual energy band scheme derived mainly from optical investigations is confirmed by careful evaluation of the high-temperature electrical conductivity, and allows a consistent description at most of the experimental results.

  5. Growth of diamond layers on diamond and cBN seeds using iron carbide under high pressure and high temperature

    CERN Document Server

    Li Xun; Hao Zhao Yin; LiuPeng; Li Musen; Zou Guang Tian; Cheng Shu Yu; Cheng Kai Jia

    2002-01-01

    Iron carbide without any graphite was studied under high pressure and high temperature (HPHT); diamond layers were obtained both on diamond and on cubic boron nitride seeds at 5.5 GPa and 1700-1750 K. The results showed that transition-metal carbide was the main intermediate in the course of the transformation from graphite to diamond under HPHT.

  6. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  7. Effect of boron on intergranular hot cracking in Ni-Cr-Fe superalloys containing niobium

    Science.gov (United States)

    Thompson, R. G.

    1990-01-01

    Solidification mechanisms had a dominant influence on microfissuring behavior of the test group. Carbon modified the Laves formation significantly and showed that one approach to alloy design would be balancing carbide formers against Laves formers. Boron's strong effect on microfissuring can be traced to its potency as a Laves former. Boron's segregation to grain boundaries plays at best a secondary role in microfissuring.

  8. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  9. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  10. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  11. Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

    Science.gov (United States)

    Gaballa, Osama Gaballa Bahig

    Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering

  12. The influence of chosen modifiers on stereological parameters of carbides of chromium cast iron

    Directory of Open Access Journals (Sweden)

    A. Studnicki

    2011-07-01

    Full Text Available The results of investigations of stereological carbides in the modified wear resistance chromium cast iron resistant were introduced in the article. There were following elements: boron, niobium, vanadium, cerium and lanthanum (RE, nitrogen in the composition of modifiers. The influence of used modifiers on such stereological parameters of carbides as: size, perimeter, shape coefficient and volume fraction was showed in tables and on diagrams.

  13. Phase Analysis of Cemented Carbide WC-Co Boronised with Yttrium

    Institute of Scientific and Technical Information of China (English)

    刘寿荣; 郝建民; 褚连青; 宋俊亭

    2002-01-01

    Phase analysis for the coated surface with B4C and Y2O3 of cemented carbid e WC-20Co in vacuum-heating was carried out by high-temperature X-ray diffra ction from ambient temperature to 1300 ℃. The results show that, the high-conc entration active boron atoms are released from the boron-supply agent B4C loc ated on the alloy surface and diffused into the γ-phase, leading to forming th e three-element boron-bearing compound W2Co21B6 beside forming boron -bearing compounds on the blank surface. By contrast with boronising only, the element yttrium in boronization broadens the boronising temperature range during vacuum-sintering, catalyzes the decarbonisation decomposition of B4C and prom otes diffusion of active boron atoms into the bulk of WC-Co.

  14. Phase Analysis of Cemented Carbide WC—Co Boronised with Yttrium

    Institute of Scientific and Technical Information of China (English)

    刘寿荣; 郝建民; 等

    2002-01-01

    Phase analysis for the coated surface with B4Cand Y2O3of cemented carbide WC-20Co in vacuum-heating was carried out by high-temperature X-ray diffraction from ambient temperature to 1300℃,The results show that,the high-concentration active boron atoms are released from the boron-supply agent B4Clocated on the alloy surface and diffused into the γphase,leading to forming the three-element boron-bearing compound W2Co21B6beside forming boron-bearins compounds on the blank surface.By contrast with boronising only,the element yttrium in boronization broadens the boronising temperature range during vacuum-sistering,catalyzes the decarbonisation decomposition of B4C and promotes diffusion of active boron atoms into the bulk of WC-Co.

  15. B4C solid target boronization of the MST reversed-field pinch

    International Nuclear Information System (INIS)

    A solid rod of hot-pressed boron carbide is being used as the source of boron during boronization of MST. The most striking result of this procedure is the reduction in oxygen contamination of the plasma (O III radiation, characteristic of oxygen at the edge, falls by about a factor of 3 after boronization.). The radiated power fraction drops to about half its initial value. Particle reflux from the wall is also lowered, making density control simpler. The rod (12.7 mm diameter) is inserted into the edge plasma of normal high-power RFP discharges. B4C is ablated from the surface of the rod and deposited in a thin film (a-B/C:H) on the walls and limiters. The energy flux carried by ''superthermal'' (not ''runaway'') electrons at the edge of MST appears to enhance the efficient, non-destructive ablation of the boron carbide rod

  16. The possibility of the boronizing process on the pressed samples of iron powder

    Directory of Open Access Journals (Sweden)

    Požega Emina D.

    2009-01-01

    Full Text Available The paper presents results of the experimental investigation of the boronizing process on nonsintering iron powder samples (NC100.24, Höganäs, Sweden. Experiments are planned within the limits of applicability of simultaneous sintering at chemical-thermal treatment process (boronizing. The simlex plan of 15 experimental points was used for the experiment, while a polynomial function of fourth degree was employed in the modeling of a mixture composition based on the volume changes, porosity and the depth layer changes. Boronizing was carried out in mixture with born carbide by addition of ammonium bifluoride, ammonium chloride and boron potassium fluoride as activators, by proportion definited plan.

  17. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  18. Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Krivezhenko, Dina S., E-mail: dinylkaa@yandex.ru; Drobyaz, Ekaterina A., E-mail: ekaterina.drobyaz@yandex.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru; Chuchkova, Lyubov V., E-mail: twitty-kun@mail.ru [Novosibirsk State Technical University, Novosibirsk, 630073 (Russian Federation)

    2015-10-27

    An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

  19. Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

    Science.gov (United States)

    Krivezhenko, Dina S.; Drobyaz, Ekaterina A.; Bataev, Ivan A.; Chuchkova, Lyubov V.

    2015-10-01

    An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

  20. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  1. Abrasive wear behavior of heat-treated ABC-silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da; Ritchie, Robert O.; De Jonghe, Lutgard C.

    2002-06-17

    Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

  2. Reactivity of carbides in synthesis of MgB 2 bulks

    Science.gov (United States)

    Yamamoto, Akiyasu; Shimoyama, Jun-ichi; Ueda, Shinya; Horii, Shigeru; Kishio, Kohji

    2006-10-01

    The reactivity of various carbides (B4C, Al4C3, SiC, TiC, ZrC, NbC, Mo2C, HfC and WC) with magnesium and boron in synthesis of MgB2 was systematically studied. Decreases in the a-axis length and transition temperature were observed in all the carbide doped MgB2 bulks, reflecting a certain amount of carbon substituted for boron site in MgB2. The reactivity of each carbide estimated by the carbon content in MgB2 was found to be different depending on the chemical stability. Our results suggest that carbon content in MgB2 lattice can be controlled to its optimal doping level by adjusting synthesis conditions and selection of doping reagents.

  3. Effect of boron on creep characteristics in 9Cr-1.5Mo alloys

    Science.gov (United States)

    Kim, Bumjoon; Yun, Haksu; Lee, Dongbok; Lim, Byeongsoo

    2009-01-01

    For thick-section components such as headers and pipes of the power plants, high creep rupture strength and oxidation resistance are required. It is known that the addition of boron can improve the creep strength and oxidation resistance through the stabilization of M23C6 carbides in the vicinity of prior austenite grain boundaries. In this study, the effect of boron addition with the range of 0.0033~0.0133 wt% on the creep behavior of 9Cr-1.5Mo steel was investigated. Small punch creep tests were carried out to investigate the effect of boron addition on creep properties. Microstructure observation was performed to analyze the effect of boron addition on creep strength and rupture life. Also, the relationship between the minimum creep rate and the amount of boron addition were analyzed. The addition of boron is beneficial in lowering the steady-state creep rate.

  4. Separate vaporisation of boric acid and inorganic boron from tungsten sample cuvette-tungsten boat furnace followed by the detection of boron species by inductively coupled plasma mass spectrometry and atomic emission spectrometry (ICP-MS and ICP-AES).

    Science.gov (United States)

    Kataoka, Hiroko; Okamoto, Yasuaki; Tsukahara, Satoshi; Fujiwara, Terufumi; Ito, Kazuaki

    2008-03-10

    Utilising extremely different vaporisation properties of boron compounds, the determination procedures of volatile boric acid and total boron using tungsten boat furnace (TBF) ICP-MS and TBF-ICP-AES have been investigated. For the determination of volatile boric acid by TBF-ICP-MS, tetramethylammonium hydroxide (TMAH, Me(4)NOH) was used as a chemical modifier to retain it during drying and ashing stages. As for the total boron, not only non-volatile inorganic boron such as boron nitride (BN), boron carbide (B(4)C), etc. but also boric acid (B(OH)(3)) was decomposed by a furnace-fusion digestion with NaOH to produce sodium salt of boron, a suitable species for the electrothermal vaporisation (ETV) procedure. The proposed method was applied to the analysis of various standard reference materials. The analytical results for various biological and steel samples are described.

  5. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.L. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Tang, Y.; Yang, L.; Zhang, C. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Hu, Y.; Cui, X. [Canadian Light Source Inc., 101 Perimeter Road, Saskatoon, SK S7N 0X4 (Canada)

    2015-08-31

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B{sub 4}C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B{sub 4}C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp{sup 3} bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp{sup 3} bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp{sup 3} bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films.

  6. Silicon carbide thyristor

    Science.gov (United States)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  7. Effect of boron nitride coating on fiber-matrix interactions

    International Nuclear Information System (INIS)

    Coatings can modify fiber-matrix reactions and consequently interfacial bond strengths. Commercially available mullite, silicon carbide, and carbon fibers were coated with boron nitride via low pressure chemical vapor deposition and incorporated into a mullite matrix by hot-pressing. The influence of fiber-matrix interactions for uncoated fibers on fracture morphologies was studied. These observations are related to the measured values of interfacial shear strengths

  8. Pressureless sintering of beta silicon carbide nanoparticles

    International Nuclear Information System (INIS)

    This study reports the pressureless sintering of cubic phase silicon carbide nanoparticles (β-SiC). Green blended compounds made of SiC nano-sized powder, a fugitive binder and a sintering agent (boron carbide, B4C), have been prepared. The binder is removed at low temperature (e.g. 800 degrees C) and the pressureless sintering studied between 1900 and 2100 degrees C. The nearly theoretical density (98% relative density) was obtained after 30 min at 2100 degrees C. The structural and microstructural evolutions during the heat treatment were characterised. The high temperatures needed for the sintering result in the β-SiC to α-SiC transformation which is revealed by the change of the composite microstructure. From 1900 degrees C, dense samples are composed of β-SiC grains surrounding α-SiC platelets in a well-defined orientation. TEM investigations and calculation of the activation energy of the sintering provided insight to the densification mechanism. (authors)

  9. ELECTROCHEMICAL MACHINING OF CARBIDES AND BORIDES

    Energy Technology Data Exchange (ETDEWEB)

    Dissaux, Bernard Antoine; Muller, Rolf H.; Tobias, Charles W.

    1978-07-01

    The use of high rate anodic dissolution (electrochemical machining) for shaping titanium carbide, zirconium carbide, titanium boride and zirconium boride has been investigated in 2N potassium nitrate and 3N sodium chloride under current densities ranging from 20 to 120 A/cm{sup 2} (corresponding to cutting rates of 0.3 to 1.8 mm/min). The dissolution stoichiometry for all these materials is independent of the current density in the range 20 to 120 A/cm{sup 2}. Both titanium and zirconium appear to dissolve in the +4 state, boron in the +3 state and the weight loss measurements indicate that carbon is oxidized to CO and CO{sub 2}. The current voltage curves permit to establish that, over the entire current density and flow range investigated, dissolution occurs in the transpassive state. The surface roughness obtained on TiC and ZrC is within 3-5 {micro}m and is independent of current density, applied voltage or flow rate.

  10. Composition Comprising Silicon Carbide

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  11. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Elena; Camean, Ignacio; Garcia, Roberto [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Garcia, Ana B., E-mail: anabgs@incar.csic.es [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain)

    2011-05-30

    Highlights: > Because of the catalytic effect of boron, graphite-like foams were prepared. > The presence of substitutional boron in carbon foams improves their anodic performance. > The graphitized boron-doped foams provide reversible capacities of 310 mA h g{sup -1}. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B{sub 4}C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to {approx}310 mA h g{sup -1} were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  12. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  13. Tribological properties of hot-pressed boron carbide ceramic

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Sliding friction experiments were conducted on hot-pressed B4C ceramic under the condition of sliding contact with themselves in air. The tests were run at average sliding velocity of 1.41  m/s and normal forces ranging from 11.8  N to 37.6  N. The friction coefficients decrease with the increase of sliding distance and the increase of normal load. The lowest friction coefficient is as low as 0.09, compared to 0.35~0.40 as the initial friction coefficient. X-ray diffraction was used to analyze the sliding surface before and after friction tests. The results show that the tribochemical reaction between B4C and O2 produces B2O3, and B2O3 undergoes a secondary chemical reaction with moisture in the air to form H3BO3, which is responsible for the lower friction coefficients. The low-friction mechanism of boric acid is associated with its layered-triclinic-crystal structure. The atoms on each layer are closely packed and strongly bonded to each other, but the layers are widely separated and are held together by van der Waals force. Regarding the wear rate of B4C ceramics used in friction experiments, there is not any wear could be measured by using a surface profilometer.

  14. Thermal Expansion Measurements on Boron Carbide for Fast Breeder Reactor

    Institute of Scientific and Technical Information of China (English)

    1995-01-01

    1.9ThermalExpansionMeasurementsonBoronCarbideforFastBreederReactorZhangLili;HuangYingB_4Cisneutronabsorbermaterialforcontrolr...

  15. A metallic superhard boron carbide: first-principles calculations.

    Science.gov (United States)

    Ma, Mengdong; Yang, Bingchao; Li, Zihe; Hu, Meng; Wang, Qianqian; Cui, Lin; Yu, Dongli; He, Julong

    2015-04-21

    A monoclinic BC3 phase (denoted M-BC3) has been predicted using first principles calculations. The M-BC3 structure is formed by alternately stacking sequences of metallic BC-layers and insulating C atom layers, thus, the structure exhibits two-dimensional conductivity. Its stability has been confirmed by our calculations of the total energy, elastic constants, and phonon frequencies. The pressure of phase transition from graphite-like BC3 to M-BC3 is calculated to be 9.3 GPa, and the theoretical Vickers hardness of M-BC3 is 43.8 GPa, this value indicates that the compound is a potentially superhard material. By comparing Raman spectral calculations of M-BC3 and previously proposed structures with the experimental data, we speculate that the experimentally synthesized BC3 crystal may simultaneously contain M-BC3 and Pmma-b phases.

  16. New approach to the synthesis of nanocrystalline boron carbide.

    Science.gov (United States)

    Herth, Simone; Joost, William J; Doremus, Robert H; Siegel, Richard W

    2006-04-01

    The use of nanoparticles in ceramic matrix composites provides lower sintering temperatures and higher densities at a given temperature than common coarse-grained materials. Nanocrystalline B4C was synthesized by an inexpensive carbothermal reduction method using carbon black and B2O3 as precursor. Full conversion was achieved at 1623 K for annealing times of 480 minutes or with a large excess of B2O3 and oxidation of the remaining carbon after 30 minutes of annealing. The average particle size of the synthesized B4C powder was 260 nm, which was reduced to 70 nm after separation of the small particle fraction from the larger particles by sedimentation. A mixture of the as-prepared powder and commercial coarse-grained B4C yielded an increase of the density of low temperature hot pressed samples by 25% in comparison to pure commercial B4C. Possible chemical reactions and mechanisms in the synthesis of B4C were examined with the Gibbs free energies of reactions. The most likely reaction was the reduction of B2O3 vapor at the surfaces of the carbon particles after its vapor transport from the liquid B2O3. An observed reduction of B4C yield above 1623 K was probably caused by loss of B2O3 vapor from the reaction mixture.

  17. Size effects on the infrared responses of boron carbide nanotubes

    Science.gov (United States)

    ElBiyaali, A.; Bentaleb, M.; Chadli, H.; Boutahir, M.; Rahmani, A. H.; Fakrach, B.; Hermet, P.; Rahmani, A.

    2016-10-01

    The spectral moment's method combined with a force constant model is used to calculate the polarized infrared spectra in single-walled BC3 nanotubes. We discuss the evolution of these spectra as a function of the diameter, chirality and length of nanotubes. Our work provides benchmark theoretical data for the assignment of experimental infrared spectra.

  18. Release of radionuclides from Zircaloy or boron carbide

    International Nuclear Information System (INIS)

    A report is presented on the distribution of 14C and 135Xe in Zircaloy after reactor irradiation and on temperature-dependent emission into the environment, as well as on the release of tritium from the control rod materials B4C and EuB6. (RB)

  19. Pressureless sintered silicon carbide tailored with aluminium nitride sintering agent

    International Nuclear Information System (INIS)

    This study reports the influence of aluminium nitride on the pressureless sintering of cubic phase silicon carbide nanoparticles (β-SiC). Pressureless sintering was achieved at 2000 degrees C for 5 min with the additions of boron carbide together with carbon of 1 wt% and 6 wt%, respectively, and a content of aluminium nitride between 0 and 10 wt%. Sintered samples present relative densities higher than 92%. The sintered microstructure was found to be greatly modified by the introduction of aluminium nitride, which reflects the influence of nitrogen on the β-SiC to α-SiC transformation. The toughness of sintered sample was not modified by AlN incorporation and is relatively low (around 2.5 MPa m1/2). Materials exhibited transgranular fracture mode, indicating a strong bonding between SiC grains. (authors)

  20. Lattice vibrations of icosahedral boron-rich solids

    Energy Technology Data Exchange (ETDEWEB)

    Beckel, C.L.; Yousaf, M. (The University of New Mexico, Albuquerque, New Mexico 87131 (United States))

    1991-07-01

    The rhombohedral lattices for {alpha}-boron, boron arsenide, and boron phosphide are each of D{sub 3d} symmetry and have bases that include B{sub 12} icosahedra. Boron carbide with B{sub 4}C stoichiometry has near-D{sub 3d} symmetry and is almost certainly composed of B{sub 11}C icosahedra and C-B-C chains. Comparable classical force field models are applied to each of these crystals to correlate q=0 phonon structure with experimental Raman and IR spectra. We here describe our methods and contrast interaction strengths for different materials. Vibrations are correlated in the different crystals through normal mode eigenvector expansions. Acoustic wave velocities from Brillouin zone dispersion curves in two distinct symmetry-axis directions are presented and contrasted for {alpha}-boron and B{sub 12}As{sub 2}. The origin of lines with anomalous polarization and width in {alpha}-boron, B{sub 12}As{sub 2}, and B{sub 12}P{sub 2} is considered.

  1. RESEARCH OF INFLUENCE OF ALLOYING BY BORON ON PROPERTIES THE IRON-CARBON ALLOYS

    Directory of Open Access Journals (Sweden)

    K. V. Kobyakov

    2014-01-01

    Full Text Available It is shown that for improvement of physical-mechanical properties of the cast products which have hard usage, the boron carbide, which can be used at carrying out process of thermo-chemical treatment of cast products of iron-carbon alloy, is of great interest.

  2. The influence of Boron on creep-rupture behaviour of austenitic unstabilized and Nb-stabilized stainless steel X8CrNi 1613 in unirradiated and irradiated condition

    International Nuclear Information System (INIS)

    The present study deals with influence of boron on creep-rupture behaviour in unirradiated condition at 6500C along with precipitation behaviour, heat-treatment and recrystallization of unstabilized and stabilized steel. The results of creep-rupture tests on unirradiated specimens show that boron exerts a beneficial effect on the rupture life and ductility. Boron losses its beneficial effect on creep properties in unstabilized steel by prolong creeping. The magnitude of beneficial effect of Boron on creep properties depends upon the initial boron distribution which influences the number, size and distribution of the precipitates. Boron promotes the precipitation of type M23C6 Carbides in the grain as well as at the grain boundary. Boron segregates in atomic form during slow cooling from austenitizing temperature. The recrystallization will be delayed by the presence of boron. The results of creep tests at 6500C shows that boron exerts a beneficial effect on creep life of irradiated steels. (orig./GSC)

  3. Influence of structure defects on optical and electronic properties of icosahedral boron rich solids

    CERN Document Server

    Schmechel, R

    1999-01-01

    doped beta-rhombohedral boron by Kramers-Kronig-Analysis gives information on the main transport processes. Beside hopping conduction of localized electrons, band conduction of delocalized electrons were found. While holes in the valence band are the delocalized charge carriers in boron carbide, in vanadium doped beta-rhombohedral boron delocalized electrons in an extrinsic impurity band are suggested. Boron and boron rich solids are known to have a high concentration on intrinsic structural imperfections. From known structure data of real crystals and known band structure calculations of perfect ideal crystals a correlation between intrinsic structure defect concentration and electron deficit in the valence band is concluded. This correlation forms the basis for the following theses: 1. The electron deficit in the valence band of a perfect crystal is the driving force for the intrinsic structure defects in a real crystal. 2. The small electron deficit becomes compensated by the structure defects - this expla...

  4. R.F. magnetron sputtering of multilayered c-BN films on cemented carbide tool.

    Science.gov (United States)

    Park, Sungtae; Jeong, Sehoon; Lee, Kwangmin

    2011-02-01

    A c-BN thin film was deposited using a B4C target in a r.f. magnetron sputtering system. The c-BN layer was coated with a TiAIN adhesion layer (approximately 2 microm), boron carbide (approximately 1 microm) and BCN (10 approximately 15 nm) nano-gradient layer system. The c-BN layers with thicknesses of more than 0.5 microm were successfully deposited onto cemented carbide substrates. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of sp3 BN bonds.

  5. Standard specification for boron-Based neutron absorbing material systems for use in nuclear spent fuel storage racks

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2011-01-01

    1.1 This specification defines criteria for boron-based neutron absorbing material systems used in racks in a pool environment for storage of nuclear light water reactor (LWR) spent-fuel assemblies or disassembled components to maintain sub-criticality in the storage rack system. 1.2 Boron-based neutron absorbing material systems normally consist of metallic boron or a chemical compound containing boron (for example, boron carbide, B4C) supported by a matrix of aluminum, steel, or other materials. 1.3 In a boron-based absorber, neutron absorption occurs primarily by the boron-10 isotope that is present in natural boron to the extent of 18.3 ± 0.2 % by weight (depending upon the geological origin of the boron). Boron, enriched in boron-10 could also be used. 1.4 The materials systems described herein shall be functional – that is always be capable to maintain a B10 areal density such that subcriticality Keff <0.95 or Keff <0.98 or Keff < 1.0 depending on the design specification for the service...

  6. Effect of molybdenum, vanadium, boron on mechanical properties of high chromium white cast iron in as-cast condition

    Science.gov (United States)

    Nurjaman, F.; Sumardi, S.; Shofi, A.; Aryati, M.; Suharno, B.

    2016-02-01

    In this experiment, the effect of the addition carbide forming elements on high chromium white cast iron, such as molybdenum, vanadium and boron on its mechanical properties and microstructure was investigated. The high chromium white cast iron was produced by casting process and formed in 50 mm size of grinding balls with several compositions. Characterization of these grinding balls was conducted by using some testing methods, such as: chemical and microstructure analysis, hardness, and impact test. From the results, the addition of molybdenum, vanadium, and boron on high chromium white cast iron provided a significant improvement on its hardness, but reduced its toughness. Molybdenum induced fully austenitic matrix and Mo2C formation among eutectic M7C3 carbide. Vanadium was dissolved in the matrix and carbide. While boron was played a role to form fine eutectic carbide. Grinding balls with 1.89 C-13.1 Cr-1.32 Mo-1.36 V-0.00051 B in as-cast condition had the highest hardness, which was caused by finer structure of eutectic carbide, needle like structure (upper bainite) matrix, and martensite on its carbide boundary.

  7. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  8. Silicon Carbide/Boron Nitride Dual In-Line Coating of Silicon Carbide Fiber Tows Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will demonstrate monolayer and dual layer coating of SiC fiber by leveraging Laser Chemical Vapor Deposition techniques developed by Free...

  9. Raman effect in icosahedral boron-rich solids

    Directory of Open Access Journals (Sweden)

    Helmut Werheit, Volodymyr Filipov, Udo Kuhlmann, Ulrich Schwarz, Marc Armbrüster, Andreas Leithe-Jasper, Takaho Tanaka, Iwami Higashi, Torsten Lundström, Vladimir N Gurin and Maria M Korsukova

    2010-01-01

    Full Text Available We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB66, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects. Vibrations of the icosahedra, occurring in all the spectra, are interpreted using the description of modes in α-rhombohedral boron by Beckel et al. The Raman spectrum of boron carbide is largely clarified. Relative intra- and inter-icosahedral bonding forces are estimated for the different structural groups and for vanadium-doped β-rhombohedral boron. The validity of Badger's rule is demonstrated for the force constants of inter-icosahedral B–B bonds, whereas the agreement is less satisfactory for the intra-icosahedral B–B bonds.

  10. ENTIRELY AQUEOUS SOLUTION-GEL ROUTE FOR THE PREPARATION OF ZIRCONIUM CARBIDE, HAFNIUM CARBIDE AND THEIR TERNARY CARBIDE POWDERS

    Directory of Open Access Journals (Sweden)

    Zhang Changrui

    2016-07-01

    Full Text Available An entirely aqueous solution-gel route has been developed for the synthesis of zirconium carbide, hafnium carbide and their ternary carbide powders. Zirconium oxychloride (ZrOCl₂.8H₂O, malic acid (MA and ethylene glycol (EG were dissolved in water to form the aqueous zirconium carbide precursor. Afterwards, this aqueous precursor was gelled and transformed into zirconium carbide at a relatively low temperature (1200 °C for achieving an intimate mixing of the intermediate products. Hafnium and the ternary carbide powders were also synthesized via the same aqueous route. All the zirconium, hafnium and ternary carbide powders exhibited a particle size of ∼100 nm.

  11. Sensitivity analysis of a PWR fuel element using zircaloy and silicon carbide claddings

    Energy Technology Data Exchange (ETDEWEB)

    Faria, Rochkhudson B. de; Cardoso, Fabiano; Salome, Jean A.D.; Pereira, Claubia; Fortini, Angela, E-mail: rochkhudson@ufmg.br, E-mail: claubia@nuclear.ufmg.br [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Escola de Engenharia. Departamento de Engenharia Nuclear

    2015-07-01

    The alloy composed of zirconium has been used effectively for over 50 years in claddings of nuclear fuel, especially for PWR type reactors. However, to increase fuel enrichment with the aim of raising the burning and maintaining the safety of nuclear plants is of great relevance the study of new materials that can replace safely and efficiently zircaloy cladding. Among several proposed material, silicon carbide (SiC) has a potential to replace zircaloy as fuel cladding material due to its high-temperature tolerance, chemical stability and low neutron affinity. In this paper, the goal is to expand the study with silicon carbide cladding, checking its behavior when submitted to an environment with boron, burnable poison rods, and temperature variations. Sensitivity calculation and the impact in multiplication factor to both claddings, zircaloy and silicon carbide, were performed during the burnup. The neutronic analysis was made using the SCALE 6.0 (Standardized Computer Analysis for Licensing Evaluation) code. (author)

  12. Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

    Science.gov (United States)

    Mieskowski, Diane M.; Sanders, William A.

    1989-01-01

    Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

  13. Quantum emission from hexagonal boron nitride monolayers.

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. PMID:26501751

  14. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran

    2011-01-01

    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  15. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  16. Microstructural Study of Titanium Carbide Coating on Cemented Carbide

    DEFF Research Database (Denmark)

    Vuorinen, S.; Horsewell, Andy

    1982-01-01

    Titanium carbide coating layers on cemented carbide substrates have been investigated by transmission electron microscopy. Microstructural variations within the typically 5µm thick chemical vapour deposited TiC coatings were found to vary with deposit thickness such that a layer structure could...... be delineated. Close to the interface further microstructural inhomogeneities were obsered, there being a clear dependence of TiC deposition mechanism on the chemical and crystallographic nature of the upper layers of the multiphase substrate....

  17. Improved silicon carbide for advanced heat engines

    Science.gov (United States)

    Whalen, Thomas J.

    1989-01-01

    The development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines is studied. Injection molding was the forming method selected for the program because it is capable of forming complex parts adaptable for mass production on an economically sound basis. The goals were to reach a Weibull characteristic strength of 550 MPa (80 ksi) and a Weibull modulus of 16 for bars tested in four-point loading. Statistically designed experiments were performed throughout the program and a fluid mixing process employing an attritor mixer was developed. Compositional improvements in the amounts and sources of boron and carbon used and a pressureless sintering cycle were developed which provided samples of about 99 percent of theoretical density. Strengths were found to improve significantly by annealing in air. Strengths in excess of 550 MPa (80 ksi) with Weibull modulus of about 9 were obtained. Further improvements in Weibull modulus to about 16 were realized by proof testing. This is an increase of 86 percent in strength and 100 percent in Weibull modulus over the baseline data generated at the beginning of the program. Molding yields were improved and flaw distributions were observed to follow a Poisson process. Magic angle spinning nuclear magnetic resonance spectra were found to be useful in characterizing the SiC powder and the sintered samples. Turbocharger rotors were molded and examined as an indication of the moldability of the mixes which were developed in this program.

  18. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  19. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  20. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  1. Palladium interaction with silicon carbide

    International Nuclear Information System (INIS)

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation

  2. Palladium interaction with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M., E-mail: Marialuisa.Gentile@manchester.ac.uk [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom); Xiao, P. [Materials Science Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Abram, T. [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-07-15

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd{sub 3}Si and SiO{sub 2} phases, while the second peak and the third peak are correlated with the formation of Pd{sub 2}Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO{sub 2} phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiC{sub x}O{sub y} phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  3. Palladium interaction with silicon carbide

    Science.gov (United States)

    Gentile, M.; Xiao, P.; Abram, T.

    2015-07-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC-5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  4. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  5. Laser melting of uranium carbides

    Science.gov (United States)

    Utton, C. A.; De Bruycker, F.; Boboridis, K.; Jardin, R.; Noel, H.; Guéneau, C.; Manara, D.

    2009-03-01

    In the context of the material research aimed at supporting the development of nuclear plants of the fourth Generation, renewed interest has recently arisen in carbide fuels. A profound understanding of the behaviour of nuclear materials in extreme conditions is of prime importance for the analysis of the operation limits of nuclear fuels, and prediction of possible nuclear reactor accidents. In this context, the main goal of the present paper is to demonstrate the feasibility of laser induced melting experiments on stoichiometric uranium carbides; UC, UC1.5 and UC2. Measurements were performed, at temperatures around 3000 K, under a few bars of inert gas in order to minimise vaporisation and oxidation effects, which may occur at these temperatures. Moreover, a recently developed investigation method has been employed, based on in situ analysis of the sample surface reflectivity evolution during melting. Current results, 2781 K for the melting point of UC, 2665 K for the solidus and 2681 K for the liquidus of U2C3, 2754 K for the solidus and 2770 K for the liquidus of UC2, are in fair agreement with early publications where the melting behaviour of uranium carbides was investigated by traditional furnace melting methods. Further information has been obtained in the current research about the non-congruent (solidus-liquidus) melting of certain carbides, which suggest that a solidus-liquidus scheme is followed by higher ratio carbides, possibly even for UC2.

  6. Effects of boron-doping on the morphology and magnetic property of carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    JIANG Qi; QIAN Lan; YI Jing; ZHU Xiaotong; ZHAO Yong

    2007-01-01

    Boron carbide nanotubes (nano-fibers) was prepared by B powder and carbon nanotubes (CNTs) at high temperature in a vacuumed quartz tube.The morphology,microstructure,component and magnetic property of samples were characterized by transmission electron microscopy (TEM),X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and magnetic property measurement system (MPMS) controller.The results showed that B-doping CNTs have great difference in the morphology and magnetic property from those of pristine CNTs.

  7. Silicon carbide as platform for energy applications

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Jokubavicius, Valdas; Sun, Jianwu;

    Silicon carbide is emerging as a novel material for a range of energy and environmental technologies. Previously, silicon carbide was considered as a material mainly for transistor applications. We have initiated the use of silicon carbide material towards optoelectronics in general lighting...

  8. Palladium interaction with silicon carbide

    OpenAIRE

    M. Gentile, P. Xiao, T. Abram

    2015-01-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide...

  9. Reinforcement of tungsten carbide grains by nanoprecipitates in cemented carbides

    Science.gov (United States)

    Liu, Xingwei; Song, Xiaoyan; Wang, Haibin; Hou, Chao; Liu, Xuemei; Wang, Xilong

    2016-10-01

    In contrast to the conventional method that obtains a high fracture strength of tungsten carbide-cobalt (WC-Co) cemented carbides by reducing WC grain size to near-nano or nanoscale, a new approach has been developed to achieve ultrahigh fracture strength by strengthening the WC grains through precipitate reinforcement. The cemented carbides were prepared by liquid-state sintering the in situ synthesized WC-Co composite powders with a little excess carbon and pre-milled Cr3C2 particles having different size scales. It was found that the nanoscale dispersed particles precipitate in the WC grains, which mainly have a coherent or semi-coherent interface with the matrix. The pinning effect of the nanoparticles on the motion of dislocations within the WC grains was observed. The mechanisms for the precipitation of nanoparticles in the WC grains were discussed, based on which a new method to enhance the resistance against the transgranular fracture of cemented carbides was proposed.

  10. Reinforcement of tungsten carbide grains by nanoprecipitates in cemented carbides.

    Science.gov (United States)

    Liu, Xingwei; Song, Xiaoyan; Wang, Haibin; Hou, Chao; Liu, Xuemei; Wang, Xilong

    2016-10-14

    In contrast to the conventional method that obtains a high fracture strength of tungsten carbide-cobalt (WC-Co) cemented carbides by reducing WC grain size to near-nano or nanoscale, a new approach has been developed to achieve ultrahigh fracture strength by strengthening the WC grains through precipitate reinforcement. The cemented carbides were prepared by liquid-state sintering the in situ synthesized WC-Co composite powders with a little excess carbon and pre-milled Cr3C2 particles having different size scales. It was found that the nanoscale dispersed particles precipitate in the WC grains, which mainly have a coherent or semi-coherent interface with the matrix. The pinning effect of the nanoparticles on the motion of dislocations within the WC grains was observed. The mechanisms for the precipitation of nanoparticles in the WC grains were discussed, based on which a new method to enhance the resistance against the transgranular fracture of cemented carbides was proposed. PMID:27609195

  11. Challenges of Engineering Grain Boundaries in Boron-Based Armor Ceramics

    Science.gov (United States)

    Coleman, Shawn P.; Hernandez-Rivera, Efrain; Behler, Kristopher D.; Synowczynski-Dunn, Jennifer; Tschopp, Mark A.

    2016-06-01

    Boron-based ceramics are appealing for lightweight applications in both vehicle and personnel protection, stemming from their combination of high hardness, high elastic modulus, and low density as compared to other ceramics and metal alloys. However, the performance of these ceramics and ceramic composites is lacking because of their inherent low fracture toughness and reduced strength under high-velocity threats. The objective of the present article is to briefly discuss both the challenges and the state of the art in experimental and computational approaches for engineering grain boundaries in boron-based armor ceramics, focusing mainly on boron carbide (B4C) and boron suboxide (B6O). The experimental challenges involve processing these ceramics at full density while trying to promote microstructure features such as intergranular films to improve toughness during shock. Many of the computational challenges for boron-based ceramics stem from their complex crystal structure which has hitherto complicated the exploration of grain boundaries and interfaces. However, bridging the gaps between experimental and computational studies at multiple scales to engineer grain boundaries in these boron-based ceramics may hold the key to maturing these material systems for lightweight defense applications.

  12. Bright prospects for boron

    NARCIS (Netherlands)

    Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  13. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  14. Plasma boron and the effects of boron supplementation in males.

    Science.gov (United States)

    Green, N R; Ferrando, A A

    1994-11-01

    Recently, a proliferation of athletic supplements has been marketed touting boron as an ergogenic aid capable of increasing testosterone. The effect of boron supplementation was investigated in male bodybuilders. Ten male bodybuilders (aged 20 to 26) were given a 2.5-mg boron supplement, while nine male bodybuilders (aged 21 to 27) were given a placebo for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on day 1 and day 49 of the study. A microwave digestion procedure followed by inductively coupled argon plasma spectroscopy was used for boron determination. Twelve subjects had boron values at or above the detection limit with median value of 25 ng/ml (16 ng/ml lower quartile and 33 ng/ml upper quartile). Of the ten subjects receiving boron supplements, six had an increase in their plasma boron. Analysis of variance indicated no significant effect of boron supplementation on any of the other dependent variables. Both groups demonstrated significant increases in total testosterone (p bodybuilding can increase total testosterone, lean body mass, and strength in lesser-trained bodybuilders, but boron supplementation affects these variables not at all.

  15. Fabrication of boron-doped carbon fibers by the decomposition of B4C and its excellent rate performance as an anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Huiqi; Ma, Canliang; Yang, Xueteng; Han, Tao; Tao, Zechao; Song, Yan; Liu, Zhanjun; Guo, Quangui; Liu, Lang

    2015-03-01

    A facile route, for the first time, was developed to fabricate boron-doped carbon fibers (BDCFs). Boron was doped into mesosphere pitch-based carbon fibers (CFs) by exposing the CFs in a vapor of boron by the decomposition of boron carbide. The microstructure of BDCFs was characterized by SEM, TEM, XRD and Raman spectroscopy. When used as anode materials for the lithium-ion batteries, BDCFs electrode exhibits an improved performance. Concretely, the specific capacity of BDCFs still had a value of over 400 mAh g-1 after 100 cycles. Moreover, BDCFs exhibits better rate capability and less hysteresis in comparison to the pristine CFs. Such enhanced lithium storage capability can be attributed to the improvement of graphitization properties and the high amount of defects induced by boron.

  16. The Effect of Boron and Zirconium on Microstructure and Stress-Rupture Life of Nickel-based Superalloy ATI 718Plus

    Directory of Open Access Journals (Sweden)

    Seyed Ali Hosseini

    2015-12-01

    Full Text Available The effects of boron and zirconium on the microstructure, hardness and stressrupture life of the nickel-based superalloy ATI 718Plus were investigated in this study. Four alloys with different percentages of boron (0.005-0.01 wt.% and zirconium (0-0.1 wt% were cast through a vacuum induction melting furnace and then were rolled. The microstructural studies indicated an increased percentage of δ phase, carbide precipitates and twins in the presence of zirconium. The percentage of carbide (boron carbide precipitates was increased and the solidification range of the alloy was decreased in the presence of boron in the composition. Furthermore, the results obtained from the hardness and stress-rupture tests showed the significant role of both elements in increasing hardness and improved rupture life of the alloy. The maximum rupture life was observed in the alloy which contained the highest percentages of boron and zirconium in its composition. This can be attributed mainly to the increased percentage of δ phase on grain boundaries and their enhanced high-temperature strength.

  17. Oxidation of Silicon and Boron in Boron Containing Molten Iron

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium-frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that silicon and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400 ℃. The favorable oxidation temperature of silicon was about 1 300-1 350 C. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.

  18. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  19. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  20. New high boron content polyborane precursors to advanced ceramic materials: New syntheses, new applications

    Science.gov (United States)

    Guron, Marta

    There is a need for new synthetic routes to high boron content materials for applications as polymeric precursors to ceramics, as well as in neutron shielding and potential medical applications. To this end, new ruthenium-catalyzed olefin metathesis routes have been devised to form new complex polyboranes and polymeric species. Metathesis of di-alkenyl substituted o-carboranes allowed the synthesis of ring-closed products fused to the carborane cage, many of which are new compounds and one that offers a superior synthetic method to one previously published. Acyclic diene metathesis of di-alkenyl substituted m-carboranes resulted in the formation of new main-chain carborane-containing polymers of modest molecular weights. Due to their extremely low char yields, and in order to explore other metathesis routes, ring opening metathesis polymerization (ROMP) was used to generate the first examples of poly(norbornenyl- o-carboranes). Monomer synthesis was achieved via a two-step process, incorporating Ti-catalyzed hydroboration to make 6-(5-norbornenyl)-decaborane, followed by alkyne insertion in ionic liquid media to achieve 1,2-R2 -3-norbornenyl o-carborane species. The monomers were then polymerized using ROMP to afford several examples of poly(norbornenyl- o-carboranes) with relatively high molecular weights. One such polymer, [1-Ph, 3-(=CH2-C5H7-CH2=)-1,2-C 2B10H10]n, had a char yield very close to the theoretical char yield of 44%. Upon random copolymerization with poly(6-(5-norbornenyl) decaborane), char yields significantly increased to 80%, but this number was well above the theoretical value implicating the formation of a boron-carbide/carbon ceramic. Finally, applications of polyboranes were explored via polymer blends toward the synthesis of ceramic composites and the use of polymer precursors as reagents for potential ultra high temperature ceramic applications. Upon pyrolysis, polymer blends of poly(6-(5-norbornenyl)-decaborane) and poly

  1. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; Zhong, J. X.

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  2. [Calcium carbide of different crystal formation synthesized by calcium carbide residue].

    Science.gov (United States)

    Lu, Zhong-yuan; Kang, Ming; Jiang, Cai-rong; Tu, Ming-jing

    2006-04-01

    To recycle calcium carbide residue effectively, calcium carbide of different crystal form, including global aragonite, calcite and acicular calcium carbide was synthesized. Both the influence of pretreatment in the purity of calcium carbide, and the influence of temperatures of carbonization reaction, release velocity of carbon dioxide in the apparition of calcium carbide of different crystal form were studied with DTA-TG and SEM. The result shows that calcium carbide residue can take place chemistry reaction with ammonia chlorinate straight. Under the condition that pH was above 7, the purity of calcium carbide was above 97%, and the whiteness was above 98. Once provided the different temperatures of carbonization reaction and the proper release velocity of carbon dioxide, global aragonite, calcite and acicular calcium carbide were obtained.

  3. Thermally Sprayed Silicon Carbide Coating

    OpenAIRE

    Mubarok, Fahmi

    2014-01-01

    Thermal spraying of silicon carbide (SiC) material is a challenging task since SiC tends to decompose during elevated temperature atmospheric spraying process. The addition of metal or ceramic binders as a matrix phase is necessary to facilitate the bonding of SiC particles, allowing SiC coatings to be deposited. In the conventional procedure, the matrix phase is added through mechanical mixing or mechanical alloying of the powder constituents, making it difficult to achieve homogeneous distr...

  4. Spark plasma sintering of tantalum carbide and graphene reinforced tantalum carbide composites

    Science.gov (United States)

    Kalluri, Ajith Kumar

    Tantalum carbide (TaC), an ultra-high temperature ceramic (UHTC), is well known for its exceptional properties such as high hardness (15-19 GPa), melting point (3950 °C), elastic modulus (537 GPa), chemical resistance, and thermal shock resistance. To make TaC to be the future material for hypersonic vehicles, it is required to improve its thermal conductivity, strength, and fracture toughness. Researchers have previously reinforced TaC ceramic with carbides of silicon and boron as well as carbon nanotubes (CNTs), however, these reinforcements either undergo chemical changes or induce defects in the matrix during processing. In addition, these reinforcements exhibit a very minimal improvement in the properties. In the present work, we attempted to improve TaC fracture toughness by reinforcing with graphene nano-platelets (GNPs) and processing through spark plasma sintering at high temperature of 2000 °C, pressure of 70 MPa, and soaking time of 10 min. In addition, we investigated the active densification mechanism during SPS of TaC powder and the effect of ball milling time on mechanical properties of sintered TaC. A relative density of >96% was achieved using SPS of monolithic TaC (<3 μm). Ball milling improved the sintering kinetics and improved the mechanical properties (microhardness, bi-axial flexural strength, and indentation fracture toughness). Activation energy (100 kJ/mol) and stress exponent (1.2) were obtained using the analytical model developed for power-law creep. Grain boundary sliding is proposed as active densification mechanism based on these calculations. Reinforcing GNPs (2-6 vol.% ) in the TaC matrix improved relative density (99.8% for TaC-6 vol.% GNP). Also ˜150% and ˜180% increase in flexural strength and fracture toughness, respectively, was observed for TaC-6 vol.% GNP composite. The significant improvement in these properties is attributed to improved densification and toughening mechanisms such as sheet pull-out and crack

  5. Method to manufacture tungsten carbide

    International Nuclear Information System (INIS)

    The patent deals with an improved method of manufacturing tungsten carbide. An oxide is preferably used as initial product whose particle size and effective surface approximately corresponds to that of the endproduct. The known methods for preparing the oxide are briefly given. Carbon monoxide is passed over the thus obtained oxide particles whereby the reaction mixture is heated to a temperature at which tungsten oxide and carbon monoxide react and tungsten carbide is formed, however, below that temperature at which the tungsten-containing materials are caked or sintered together. According to the method the reaction temperature is about below 9000C. The tungsten carbide produced has a particle size of under approximately 100 A and an active surface of about 20 m2/g. It has sofar not been possible with the usual methods to obtain such finely divided material with such a large surface. These particles may be converted back to the oxide by heating in air at low temperature without changing particle size and effective surface. One thus obtains a tungsten oxide with smaller particle size and larger effective surface than the initial product. (IHOE)

  6. Growth Characteristics and Kinetics of Niobium Carbide Coating Obtained on AISI 52100 by Thermal-reactive Diffusion Technique

    Institute of Scientific and Technical Information of China (English)

    YAN Shaojin; WANG Hongfu; SUN Qikun; HE Peng; PANG Chengang; WANG Huachang; WANG Ailing

    2014-01-01

    Niobium carbide coating was produced by thermal-reactive diffusion technique on AISI 52100 steel in salt bath at 1 123 K, 1 173 K, and 1 223 K for 1, 2, 4, and 6 hours. The salt consisted of borax, sodium fluoride, boron carbide, and niobium pentoxide. The presence of NbC phase on the steel surface was confirmed by X-ray diffraction analysis. Microscopic observation showed that niobium carbide coating formed on the substrate was smooth and compact. There was a distinct and flat interface between the coating and substrate. The micro-hardness of niobium carbide coating was 2892±145HV. The thickness of coating ranged from 1.6μm to 14μm. The forming kinetics of niobium carbide coating was revealed. Moreover, a contour diagram derived from experimental data was graphed for correct selection of process parameters. Some mathematical equations were built for predicting the coating thickness with predetermined processing temperature and time. The results showed that these mathematical equations are very practical as well as the kinetics equation.

  7. Structural prediction for scandium carbide monolayer sheet

    Science.gov (United States)

    Ma, Hong-Man; Wang, Jing; Zhao, Hui-Yan; Zhang, Dong-Bo; Liu, Ying

    2016-09-01

    A two-dimensional tetragonal scandium carbide monolayer sheet has been constructed and studied using density functional theory. The results show that the scandium carbide sheet is stable and exhibits a novel tetracoordinated quasiplanar structure, as favored by the hybridization between Sc-3d orbitals and C-2p orbitals. Calculations of the phonon dispersion as well as molecular dynamics simulations also demonstrate the structural stability of this scandium carbide monolayer sheet. Electronic properties show that the scandium carbide monolayer sheet is metallic and non-magnetic.

  8. Methods for producing silicon carbide fibers

    Science.gov (United States)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  9. Silicon carbide fibers and articles including same

    Science.gov (United States)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  10. Polytype distribution in circumstellar silicon carbide.

    Science.gov (United States)

    Daulton, T L; Bernatowicz, T J; Lewis, R S; Messenger, S; Stadermann, F J; Amari, S

    2002-06-01

    The inferred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra is controversial. We have directly determined the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite. Only two polytypes (of a possible several hundred) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths. We conclude that this structural simplicity is a direct consequence of the low pressures in circumstellar outflows and the corresponding low silicon carbide condensation temperatures. PMID:12052956

  11. Boronization and Carburization of Superplastic Stainless Steel and Titanium-Based Alloys

    Directory of Open Access Journals (Sweden)

    Masafumi Matsushita

    2011-07-01

    Full Text Available Bronization and carburization of fine-grain superplastic stainless steel is reviewed, and new experimental results for fine grain Ti88.5Al4.5V3Fe2Mo2 are reported. In superplastic duplex stainless steel, the diffusion of carbon and boron is faster than in non-superplastic duplex stainless steel. Further, diffusion is activated by uniaxial compressive stress. Moreover, non-superplastic duplex stainless steel shows typical grain boundary diffusion; however, inner grain diffusion is confirmed in superplastic stainless steel. The presence of Fe and Cr carbides or borides is confirmed by X-ray diffraction, which indicates that the diffused carbon and boron react with the Fe and Cr in superplastic stainless steel. The Vickers hardness of the carburized and boronized layers is similar to that achieved with other surface treatments such as electro-deposition. Diffusion of boron into the superplastic Ti88.5Al4.5V3Fe2Mo2 alloy was investigated. The hardness of the surface exposed to boron powder can be increased by annealing above the superplastic temperature. However, the Vickers hardness is lower than that of Ti boride.

  12. Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

    International Nuclear Information System (INIS)

    General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB2, ZrB2, NbB2, CeB6, PrB6, SmB6, EuB6, LaB6), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN2, VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

  13. Development of particle induced gamma-ray emission methods for nondestructive determination of isotopic composition of boron and its total concentration in natural and enriched samples.

    Science.gov (United States)

    Chhillar, Sumit; Acharya, Raghunath; Sodaye, Suparna; Pujari, Pradeep K

    2014-11-18

    We report simple particle induced gamma-ray emission (PIGE) methods using a 4 MeV proton beam for simultaneous and nondestructive determination of the isotopic composition of boron ((10)B/(11)B atom ratio) and total boron concentrations in various solid samples with natural isotopic composition and enriched with (10)B. It involves measurement of prompt gamma-rays at 429, 718, and 2125 keV from (10)B(p,αγ)(7)Be, (10)B(p, p'γ)(10)B, and (11)B(p, p'γ)(11)B reactions, respectively. The isotopic composition of boron in natural and enriched samples was determined by comparing peak area ratios corresponding to (10)B and (11)B of samples to natural boric acid standard. An in situ current normalized PIGE method, using F or Al, was standardized for total B concentration determination. The methods were validated by analyzing stoichiometric boron compounds and applied to samples such as boron carbide, boric acid, carborane, and borosilicate glass. Isotopic compositions of boron in the range of 0.247-2.0 corresponding to (10)B in the range of 19.8-67.0 atom % and total B concentrations in the range of 5-78 wt % were determined. It has been demonstrated that PIGE offers a simple and alternate method for total boron as well as isotopic composition determination in boron based solid samples, including neutron absorbers that are important in nuclear technology.

  14. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  15. XPS, SIMS and FTIR-ATR characterization of boronized graphite from the thermonuclear plasma device RFX-mod

    Science.gov (United States)

    Ghezzi, F.; Laguardia, L.; Caniello, R.; Canton, A.; Dal Bello, S.; Rais, B.; Anderle, M.

    2015-11-01

    In this paper the characterization of a thin (tens of nanometers) boron layer on fine grain polycrystalline graphite substrate is presented. The boron film is used as conditioning technique for the full graphite wall of the Reversed Field eXperiment-modified (RFX-mod) experiment, a device for the magnetic confinement of plasmas of thermonuclear interest. Aim of the present analysis is to enlighten the chemical structure of the film, the trapping mechanism that makes it a getter for oxygen and hydrogen and the reason of its loss of effectiveness after exposure to about 100 s of hydrogen plasma. X-ray Photoelectron Spectroscopy (XPS), Secondary Ions Mass Spectrometry (SIMS) and Fourier Transform Infra Red spectroscopy in combination with the Attenuated Total Reflectance (FTIR-ATR) were used to obtain the structure and the chemical composition of graphitic samples as coated or coated and subsequently exposed to hydrogen plasma after boron deposition. The boron layers on the only coated samples were found to be amorphous hydrogenated boron carbide plus a variety of bonds like B-B, B-H, B-O, B-OH, C-C, C-H, C-O, C-OH. Both the thickness and the homogeneity of the layers were found to depend on the distance of the sample from the anode during the deposition. The samples contained oxygen along the layer thickness, at level of 5%, bound to boron. The gettering action of the boron is therefore already active during the deposition itself. The exposure to plasma caused erosion of the boron film and higher content of H and O bound to boron throughout the whole thickness. The interaction of the B layer with plasma is therefore a bulk phenomenon.

  16. Hydroxide catalysis bonding of silicon carbide

    NARCIS (Netherlands)

    Veggel, A.A. van; Ende, D.A. van den; Bogenstahl, J.; Rowan, S.; Cunningham, W.; Gubbels, G.H.M.; Nijmeijer, H.

    2008-01-01

    For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information: D.Whiteford@admin.gla.ac.uk]. This techn

  17. Ligand sphere conversions in terminal carbide complexes

    DEFF Research Database (Denmark)

    Morsing, Thorbjørn Juul; Reinholdt, Anders; Sauer, Stephan P. A.;

    2016-01-01

    Metathesis is introduced as a preparative route to terminal carbide complexes. The chloride ligands of the terminal carbide complex [RuC(Cl)2(PCy3)2] (RuC) can be exchanged, paving the way for a systematic variation of the ligand sphere. A series of substituted complexes, including the first...... example of a cationic terminal carbide complex, [RuC(Cl)(CH3CN)(PCy3)2]+, is described and characterized by NMR, MS, X-ray crystallography, and computational studies. The experimentally observed irregular variation of the carbide 13C chemical shift is shown to be accurately reproduced by DFT, which also...... demonstrates that details of the coordination geometry affect the carbide chemical shift equally as much as variations in the nature of the auxiliary ligands. Furthermore, the kinetics of formation of the sqaure pyramidal dicyano complex, trans-[RuC(CN)2(PCy3)2], from RuC has been examined and the reaction...

  18. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  19. 10Boron distribution measurement in laser ablated B4C thin films using (n,α) reaction and LR-115 passive detector

    International Nuclear Information System (INIS)

    Lateral distribution of the 10B isotope within a boron carbide film of 550 nm maximum thickness deposited on silicon wafer using pulsed laser deposition technique has been determined taking advantage of the high cross section for (n,α) reaction and nuclear tracks detectors (NTD - LR-115 Kodak Pathe). A radioisotope neutron source (252Cf, 20 μg) and a 60 x 60 x 80 cm3 graphite cube as moderator produce a relatively uniform thermal neutron field. Details of the passive detector etching process and data processing are included. The track density reveals the boron density spatial distribution. A 3D picture is produced to visualize the boron-10 spatial distribution. The result suggests that a gradient in the boron distribution exists to almost a factor of three. The advantages of the technique are discussed.

  20. {sup 10}Boron distribution measurement in laser ablated B{sub 4}C thin films using (n,alpha) reaction and LR-115 passive detector

    Energy Technology Data Exchange (ETDEWEB)

    Sajo-Bohus, L., E-mail: sajobohus@gmail.co [Universidad Simon Bolivar, Nuclear Physics Section, Valle de Sartenejas, Caracas 89000A (Venezuela, Bolivarian Republic of); Simon, A. [Institute of Nuclear Research of the Hungarian Academy of Sciences, Debrecen 4026 (Hungary); Csako, T. [Dep. of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Nemeth, P.; Palacios, D. [Universidad Simon Bolivar, Nuclear Physics Section, Valle de Sartenejas, Caracas 89000A (Venezuela, Bolivarian Republic of); Espinosa, G. [Universidad Nacional Autonoma de Mexico, Mexico City (Mexico); Greaves, E.D. [Universidad Simon Bolivar, Nuclear Physics Section, Valle de Sartenejas, Caracas 89000A (Venezuela, Bolivarian Republic of); Szoerenyi, T. [Dep. of Nat. Sci. and Environ. Prot., College of Dunaujvaros, P.O. Box 152, H-2401 Dunaujvaros (Hungary); Barros, H. [Universidad Simon Bolivar, Nuclear Physics Section, Valle de Sartenejas, Caracas 89000A (Venezuela, Bolivarian Republic of)

    2009-10-15

    Lateral distribution of the {sup 10}B isotope within a boron carbide film of 550 nm maximum thickness deposited on silicon wafer using pulsed laser deposition technique has been determined taking advantage of the high cross section for (n,alpha) reaction and nuclear tracks detectors (NTD - LR-115 Kodak Pathe). A radioisotope neutron source ({sup 252}Cf, 20 mug) and a 60 x 60 x 80 cm{sup 3} graphite cube as moderator produce a relatively uniform thermal neutron field. Details of the passive detector etching process and data processing are included. The track density reveals the boron density spatial distribution. A 3D picture is produced to visualize the boron-10 spatial distribution. The result suggests that a gradient in the boron distribution exists to almost a factor of three. The advantages of the technique are discussed.

  1. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  2. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  3. The impact of carbon on single crystal nickel-base superalloys: Carbide behavior and alloy performance

    Science.gov (United States)

    Wasson, Andrew Jay

    Advanced single crystal nickel-base superalloys are prone to the formation of casting grain defects, which hinders their practical implementation in large gas turbine components. Additions of carbon (C) have recently been identified as a means of reducing grain defects, but the full impact of C on single crystal superalloy behavior is not entirely understood. A study was conducted to determine the effects of C and other minor elemental additions on the behavior of CMSX-4, a commercially relevant 2nd generation single crystal superalloy. Baseline CMSX-4 and three alloy modifications (CMSX-4 + 0.05 wt. % C, CMSX-4 + 0.05 wt. % C and 68 ppm boron (B), and CMSX-4 + 0.05 wt. % C and 23 ppm nitrogen (N)) were heat treated before being tested in high temperature creep and high cycle fatigue (HCF). Select samples were subjected to long term thermal exposure (1000 °C/1000 hrs) to assess microstructural stability. The C modifications resulted in significant differences in microstructure and alloy performance as compared to the baseline. These variations were generally attributed to the behavior of carbide phases in the alloy modifications. The C modification and the C+B modification, which both exhibited script carbide networks, were 25% more effective than the C+N modification (small blocky carbides) and 10% more effective than the baseline at preventing grain defects in cast bars. All C-modified alloys exhibited reduced as-cast gamma/gamma' eutectic and increased casting porosity as compared to baseline CMSX-4. The higher levels of porosity (volume fractions 0.002 - 0.005 greater than the baseline) were attributed to carbides blocking molten fluid flow during the final stages of solidification. Although the minor additions resulted in reduced solidus temperature by up to 16 °C, all alloys were successfully heat treated without incipient melting by modifying commercial heat treatment schedules. In the B-containing alloy, heat treatment resulted in the transformation of

  4. Hydrothermal synthesis of xonotlite from carbide slag

    Institute of Scientific and Technical Information of China (English)

    Jianxin Cao; Fei Liu; Qian Lin; Yu Zhang

    2008-01-01

    Carbide slag was used as the calcareous materials for the first time to prepare xonotlite via dynamic hydrothermal synthesis.The effects of influential factors including different calcination temperatures,pretreatment methods of the carbide slag and process param-eters of hydrothermal synthesis on the microstructure and morphology of xonotlite were explored using XRD and SEM techniques.The results indicate that the carbide slag after proper calcination could be used to prepare pure xonotlite;and different calcination tern-peratures have little effect on the crystallinity of synthesized xonotlitc,but have great impact on the morphology of secondary particles.The different pretreatment methods of the carbide slag pose great impact on the crystallinity and morphology of secondary particles of xonotlite.Xonotlite was also synthesized from pure CaO under the salne experimental conditions as that prepared from calcined carbide slag for comparison.Little amount of impurities in carbide slag has no effect on the mechanism of hydrothermal synthesizing xonotlite from carbide slag.

  5. Precipitating Mechanism of Carbide in Cold-Welding Surfacing Metals

    Institute of Scientific and Technical Information of China (English)

    Yuanbin ZHANG; Dengyi REN

    2004-01-01

    Carbides in a series of cold-welding weld metals were studied by means of SEM, TEM and EPMA, and the forming mechanism of carbide was proposed according to their distribution and morphology. Due to their different carbide-forming tendency, Nb and Ti could combine with C to form particulate carbide in liquid weld metal and depleted the carbon content in matrix, while V induced the carbide precipitated along grain boundary. But too much Nb or Ti alone resulted in coarse carbide and poor strengthened matrix. When suitable amount of Nb, Ti and V coexisted in weld metal, both uniformly distributed particulate carbide and well strengthened matrix could be achieved. It was proposed that the carbide nucleated on the oxide which dispersed in liquid weld metal, and then grew into multi-layer complex carbide particles by epitaxial growth. At different sites, carbide particles may present as different morphologies.

  6. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  7. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  8. Boron toxicity in Lemna gibba

    OpenAIRE

    Mayra Sánchez Villavicencio; Carlos Álvarez Silva; Guadalupe Miranda Arce

    2007-01-01

    Total soluble phenols and total chlorophylls content, changes of biomass and concentration factor in Lemna gibba exposed to different concentrations of boron were measured. Day six soluble phenols showed significant differences in treatment with 10 mg/L of boron. At day ten, chlorophylls content in treatment 2 mg/L concentration increased respect to other experimental groups and control group, there were no significant differences. Biomass of Lemna gibba decreased significant in treatments wi...

  9. Engineering design feasibility of low boron concentration core in PWR

    Energy Technology Data Exchange (ETDEWEB)

    Daing, A. T.; Kim, M. H. [Kyung Hee University, Yongin-shi, Gyeonggi-do, 446-701 Republic of Korea (Korea, Republic of); Woo, I.; Shon, S. R., E-mail: atdaing@khu.ac.k [Korea Nuclear Fuel, 1047 Daedukdaero, Yuseong-gu, Daejeon, 305-353 Republic of Korea (Korea, Republic of)

    2010-10-15

    In pressurized water reactor operation, higher level of soluble boron concentration could contribute higher impact from boron dilution situations, higher amount of liquid waste, and higher radiation dose to operators from higher corrosion potential to cladding and structure. Two practical and feasible means to reduce the maximum boron concentration were investigated in this study. A technically straightforward, possible means, can be achieved either by implementation of enriched boric acid (Eba) or by increasing more shim rod (fixed burnable absorber) worth. A simplest option is that the Eba is applied into reference core (Ref) design, OPR-1000 design, Ulchin unit-5 by allowing use of same fuel assemblies and core design without changing any nuclear design methodology used in that Ref design. Although results of Eba option proved its favorable power distribution and peaking factor, its moderator temperature coefficient (MTC) value reached positive, 3.25 pcm/ C at 40 EFPD which is beyond the design safety limit. An alternative option with more shim rods in fuel assemblies was tried with four types of integral burnable absorbers: gadolinia, integral fuel burnable absorber (Ifba), erbium and alumina boron carbide. Four core design candidates have been developed by keeping major engineering designs and preserving equivalent fuel enrichment level used in Ref design. However, all optimal designs were targeted to achieve comparable discharge burnup as well as favorable design safety parameters. The comparative analysis between Ref and optimal core designs is presented here. One of them is suggested as the most promising and favorable low boron core (Lbc) design in this framework. The proper combination of axial and radial enrichment zoning pattern in Lbc design candidate with Ifba-bearing fuel assemblies at equilibrium cycle, could bring 2 times narrower axial offset variation than that of Ref design, and maintain acceptable power peaking factor around 23% lower than

  10. Thermal Expansion of Hafnium Carbide

    Science.gov (United States)

    Grisaffe, Salvatore J.

    1960-01-01

    Since hafnium carbide (HfC) has a melting point of 7029 deg. F, it may have many high-temperature applications. A literature search uncovered very little information about the properties of HfC, and so a program was initiated at the Lewis Research Center to determine some of the physical properties of this material. This note presents the results of the thermal expansion investigation. The thermal-expansion measurements were made with a Gaertner dilatation interferometer calibrated to an accuracy of +/- 1 deg. F. This device indicates expansion by the movement of fringes produced by the cancellation and reinforcement of fixed wave-length light rays which are reflected from the surfaces of two parallel quartz glass disks. The test specimens which separate these disks are three small cones, each approximately 0.20 in. high.

  11. Structural diversity in lithium carbides

    Science.gov (United States)

    Lin, Yangzheng; Strobel, Timothy A.; Cohen, R. E.

    2015-12-01

    The lithium-carbon binary system possesses a broad range of chemical compounds, which exhibit fascinating chemical bonding characteristics, which give rise to diverse and technologically important properties. While lithium carbides with various compositions have been studied or suggested previously, the crystal structures of these compounds are far from well understood. In this work, we present the first comprehensive survey of all ground state (GS) structures of lithium carbides over a broad range of thermodynamic conditions, using ab initio density functional theory (DFT) crystal structure searching methods. Thorough searches were performed for 29 stoichiometries ranging from Li12C to LiC12 at 0 and 40 GPa. Based on formation enthalpies from optimized van der Waals density functional calculations, three thermodynamically stable phases (Li4C3 , Li2C2 , and LiC12) were identified at 0 GPa, and seven thermodynamically stable phases (Li8C , Li6C , Li4C , Li8C3 , Li2C , Li3C4 , and Li2C3 ) were predicted at 40 GPa. A rich diversity of carbon bonding, including monomers, dimers, trimers, nanoribbons, sheets, and frameworks, was found within these structures, and the dimensionality of carbon connectivity existing within each phase increases with increasing carbon concentration. We find that the well-known composition LiC6 is actually a metastable one. We also find a unique coexistence of carbon monomers and dimers within the predicted thermodynamically stable phase Li8C3 , and different widths of carbon nanoribbons coexist in a metastable phase of Li2C2 (Imm2). Interesting mixed sp2-sp3 carbon frameworks are predicted in metastable phases with composition LiC6.

  12. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  13. Preparation of silicon carbide powders by vapor phase reaction

    International Nuclear Information System (INIS)

    Submicron silicon carbide powders (β-SiC) have been prepared by chemical vapor phase reaction from methylsilane (CH3SiH3). The methylsilane was synthesized by reduction of a technical methyltrichlorosilane with lithiumalanate. The equipment for the thermal decomposition of methylsilane consists of a gas-supply system and an induction-heated graphite reactor, which is connected with a deposition chamber and a filtering system. The temperature range investigated varied from 10000C to 18000C; Argon was used as a carrier gas. The yield increases with increasing temperature up to a value of 98%. The powders were characterized by X-ray measurements chemical analysis, determination of surface area and powder morphology, and show high purity (low oxygen content), small crystallite size and a large specific surface area. Sintering experiments with addition of 1 wt.-% boron and carbon were performed in a high-temperature dilatometer. At 20800C under argon a density of 96,5% th.d. was obtained. (orig.)

  14. IMPROVEMENT OF TYPE IV CRACKING RESISTANCE OF 9Cr HEAT RESISTING STEEL WELDMENT BY BORON ADDITION

    Institute of Scientific and Technical Information of China (English)

    M.Tabuchi; M.Kondo; T.Watanabe; H.Hongo; F.Yin; F.Abe

    2004-01-01

    Creep lives of high Cr ferritic heat resisting steel weldments decrease due to Type IV fracture, which occurs as a result of formation and growth of creep voids and cracks on grain boundaries in fine-grained heat affected zone (HAZ). Because boron is considered to suppress the coarsening of grain boundary precipitates and growth of creep voids, we have investigated the effect of boron addition on the creep properties of 9Cr steel weldments. Four kinds of 9Cr3W3CoVNb steels with boron content varying from 4.7×10-5 to 1.8×10-4 and with nitrogen as low as 2.0×10-5 were prepared.The steel plates were welded by gas tungsten arc welding and crept at 923K. It was found that the microstructures of HAZ were quite different from those of conventional high Cr steels such as P91 and P92, namely the fine-grained HAZ did not exist in the present steel weldments. Boron addition also has the effect to suppress coarsening of grain boundary carbides in HAZ during creep. As a result of these phenomena,the welded joints of present steels showed no Type IV fractures and much better creep lives than those of conventional steels.

  15. Some problems connected with boron determination by atomic absorption spectroscopy and the sensitivity improvement

    Directory of Open Access Journals (Sweden)

    JELENA J. SAVOVIC

    2001-08-01

    Full Text Available Two atomizers were compared: an N2O–C2H2 flame and a stabilized U-shaped DC arc with aerosol supply. Both the high plasma temperature and the reducing atmosphere obtained by acetylene addition to the argon stream substantially increase the sensitivity of boron determination by atomic absorption spectroscopy (AAS when the arc atomizer is used. The results were compared with those for silicon as a control element. The experimental characteristic concentrations for both elements were compared with the computed values. The experimentally obtained characteristic concentration for boron when using the arc atomizer was in better agreement with the calculated value. It was estimated that the influence of stable monoxide formation on the sensitivity for both elements was about the same, but reduction of analyte and formation of non-volatile carbide particles was more important for boron, which is the main reason for the low sensitivity of boron determination using a flame atomizer. The use of an arc atomizer suppresses this interference and significantly improves the sensitivity of the determination.

  16. Vanadium carbide coatings: deposition process and properties

    International Nuclear Information System (INIS)

    Vanadium carbide coatings on carbon and alloyed steels were produced by the method of diffusion saturation from the borax melt. Thickness of the vanadium carbide layer was 5-15 μm, depending upon the steel grade and diffusion saturation parameters. Microhardness was 20000-28000 MPa and wear resistance of the coatings under conditions of end face friction without lubrication against a mating body of WC-2Co was 15-20 times as high as that of boride coatings. Vanadium carbide coatings can operate in air at a temperature of up to 400 oC. They improve fatigue strength of carbon steels and decrease the rate of corrosion in sea and fresh water and in acid solutions. The use of vanadium carbide coatings for hardening of various types of tools, including cutting tools, allows their service life to be extended by a factor of 3 to 30. (author)

  17. Calcium carbide poisoning via food in childhood.

    Science.gov (United States)

    Per, Hüseyin; Kurtoğlu, Selim; Yağmur, Fatih; Gümüş, Hakan; Kumandaş, Sefer; Poyrazoğlu, M Hakan

    2007-02-01

    The fast ripening of fruits means they may contain various harmful properties. A commonly used agent in the ripening process is calcium carbide, a material most commonly used for welding purposes. Calcium carbide treatment of food is extremely hazardous because it contains traces of arsenic and phosphorous. Once dissolved in water, the carbide produces acetylene gas. Acetylene gas may affect the neurological system by inducing prolonged hypoxia. The findings are headache, dizziness, mood disturbances, sleepiness, mental confusion, memory loss, cerebral edema and seizures. We report the case of a previously healthy 5 year-old girl with no chronic disease history who was transferred to our Emergency Department with an 8-h history of coma and delirium. A careful history from her father revealed that the patient ate unripe dates treated with calcium carbide.

  18. The coloring problem in the solid-state metal boride carbide ScB2C2. A theoretical analysis

    International Nuclear Information System (INIS)

    The electronic properties of the layered ternary metal boride carbide ScB2C2, the structure of which consists of B/C layers made of fused five- and seven-membered rings alternating with scandium sheets, are analyzed. In particular, the respective positions of the B and C atoms (the so-called coloring problem) are tackled using density functional theory, quantum theory of atoms in molecules, and electron localizability indicator calculations. Results reveal that (i) the most stable coloring minimizes the number of B-B and C-C contacts and maximizes the number of boron atoms in the heptagons, (ii) the compound is metallic in character, and (iii) rather important covalent bonding occurs between the metallic sheets and the boron-carbon network.

  19. Ultrarapid microwave synthesis of superconducting refractory carbides

    International Nuclear Information System (INIS)

    Nb1-xTaxC Carbides can be synthesized by high power MW methods in less than 30 s. In situ and ex situ techniques probing changes in temperature and dielectric properties with time demonstrate that the reactions self-terminate as the loss tangent of the materials decreases. The resulting carbides are carbon deficient and superconducting; Tc correlates linearly to unit cell volume, reaching a maximum at NbC. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  20. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  1. Hot ductility behavior of a low carbon advanced high strength steel (AHSS) microalloyed with boron

    International Nuclear Information System (INIS)

    Research highlights: → Effect of boron on the hot ductility behavior of a low carbon NiCrVCu AHSS. → Boron addition of 117 ppm improves hot ductility over 100% in terms of RA. → Hot ductility improvement is associated with segregation/precipitation of boron. → Typical hot ductility recovery at lower temperatures does not appear in this steel. → Hot ductility loss is associated with precipitates/inclusions coupled with voids. - Abstract: The current study analyses the influence of boron addition on the hot ductility of a low carbon advanced high strength NiCrVCu steel. For this purpose hot tensile tests were carried out at different temperatures (650, 750, 800, 900 and 1000 deg. C) at a constant true strain rate of 0.001 s-1. Experimental results showed a substantial improvement in hot ductility for the low carbon advanced high strength steel when microalloyed with boron compared with that without boron addition. Nevertheless, both steels showed poor ductility when tested at the lowest temperatures (650, 750 and 800 deg. C), and such behavior is associated to the precipitation of vanadium carbides/nitrides and inclusions, particularly MnS and CuS particles. The fracture mode of the low carbon advanced high strength steel microalloyed with boron seems to be more ductile than the steel without boron addition. Furthermore, the fracture surfaces of specimens tested at temperatures showing the highest ductility (900 and 1000 deg. C) indicate that the fracture mode is a result of ductile failure, while in the region of poor ductility the fracture mode is of the ductile-brittle type failure. It was shown that precipitates and/or inclusions coupled with voids play a meaningful role on the crack nucleation mechanism which in turn causes a hot ductility loss. Likewise, dynamic recrystallization (DRX) which always results in restoration of ductility only occurs in the range from 900 to 1000 deg. C. Results are discussed in terms of boron segregation towards

  2. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Yilmaz, M. Tolga [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Chemical Engineering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)

    2005-01-31

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions.

  3. Influence of Rare Earth on Carbide in Weld Metal

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yuan-Bin; REN Deng-Yi

    2003-01-01

    The influence of rare earths (RE) on carbides in high carbon steel weld metal was studied by transmission electron microscope (TEM) and energy dispersive X-ray microanalysis (EDX). It is found that rare earth markedly affects the quantity, morphology and distribution of carbides. The precipitating mechanism of carbides was proposed in which rare earth compounds with high surface energy serve as the nucleation sites for carbides in superheated liquid metal and the induced carbides are precipitated extensively and distributed evenly. The preferential precipitation of carbides decreases the carbon content in matrix, which is transformed into low carbon lath martensite after welds are chilled to room temperature.

  4. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  5. Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

    OpenAIRE

    He, Chaoyu; Zhong, Jianxin

    2013-01-01

    The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirm...

  6. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  7. Effect of boron addition on pitting corrosion resistance of modified 9Cr-1Mo steel: Application of electrochemical noise

    Energy Technology Data Exchange (ETDEWEB)

    Pujar, M.G., E-mail: pujar55@gmail.com [Metallurgy and Materials Group (MMG), Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Das, C.R.; Thirunavukkarasu, S.; Kamachi Mudali, U.; Bhaduri, A.K. [Metallurgy and Materials Group (MMG), Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Brijitta, J.; Tata, B.V.R. [Materials Science Group (MSG), Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India)

    2011-10-17

    Highlights: {yields} Weibull probability plots separate pitting and passive corrosion events. {yields} Gumbel distribution analysis gives maximum metastable pit depths. {yields} Addition of boron results in superior pitting corrosion resistance in 0.1 M NaCl. {yields} Incorporation of B into M{sub 23}C{sub 6} carbides refines them and improves pitting resistance. {yields} Coarse M{sub 23}C{sub 6} carbides and delta-ferrite result in inferior pitting resistance. - Abstract: 9Cr-1Mo steels indigenously melted with the addition of boron (Alloy B) and without it (Alloy D) along with Alloy C (without boron addition with minor changes in the trace element concentrations) were studied for their pitting corrosion resistance in 0.001 M, 0.01 M, 0.05 M and 0.1 M sodium chloride solutions using electrochemical noise (EN) technique. Weibull probability plots were used to determine the pit embryo generation rates. Gumbel extreme value analysis was conducted to determine the maximum metastable as well as stable pit radii. The analysis of the data showed superior pitting corrosion resistance of the Alloy B compared to Alloy C as well as Alloy D.

  8. Effect of boron addition on pitting corrosion resistance of modified 9Cr-1Mo steel: Application of electrochemical noise

    International Nuclear Information System (INIS)

    Highlights: → Weibull probability plots separate pitting and passive corrosion events. → Gumbel distribution analysis gives maximum metastable pit depths. → Addition of boron results in superior pitting corrosion resistance in 0.1 M NaCl. → Incorporation of B into M23C6 carbides refines them and improves pitting resistance. → Coarse M23C6 carbides and delta-ferrite result in inferior pitting resistance. - Abstract: 9Cr-1Mo steels indigenously melted with the addition of boron (Alloy B) and without it (Alloy D) along with Alloy C (without boron addition with minor changes in the trace element concentrations) were studied for their pitting corrosion resistance in 0.001 M, 0.01 M, 0.05 M and 0.1 M sodium chloride solutions using electrochemical noise (EN) technique. Weibull probability plots were used to determine the pit embryo generation rates. Gumbel extreme value analysis was conducted to determine the maximum metastable as well as stable pit radii. The analysis of the data showed superior pitting corrosion resistance of the Alloy B compared to Alloy C as well as Alloy D.

  9. Microstructure and mechanical properties of a new type of austempered boron alloyed high silicon cast steel

    Directory of Open Access Journals (Sweden)

    Chen Xiang

    2013-05-01

    Full Text Available In the present paper, a new type of austempered boron alloyed high silicon cast steel has been developed, and its microstructures and mechanical properties at different temperatures were investigated. The experimental results indicate that the boron alloyed high silicon cast steel comprises a dendritic matrix and interdendritic eutectic borides in as-cast condition. The dendritic matrix is made up of pearlite, ferrite, and the interdendritic eutectic boride is with a chemical formula of M2B (M represents Fe, Cr, Mn or Mo which is much like that of carbide in high chromium white cast iron. Pure ausferrite structure that consists of bainitic ferrite and retained austenite can be obtained in the matrix by austempering treatment to the cast steel. No carbides precipitate in the ausferrite structure and the morphology of borides remains almost unchanged after austempering treatments. Secondary boride particles precipitate during the course of austenitizing. The hardness and tensile strength of the austempered cast steel decrease with the increase of the austempering temperature, from 250 篊 to 400 篊. The impact toughness is 4-11 J昪m-2 at room temperature and the impact fracture fractogragh indicates that the fracture is caused by the brittle fracture of the borides.

  10. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  11. Silicon Carbide Solar Cells Investigated

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  12. CALPHAD study of cubic carbide systems with Cr

    OpenAIRE

    He, Zhangting

    2015-01-01

    Cubic carbides (titanium, tantalum, niobium, and zirconium carbides) can constitute a significant proportion of so-called cubic and cermet grades, where it is added to substitute a portion of tungsten carbide. It is thus critical to understand and be able to thermodynamically model the cubic carbide systems. In order to do this, the thermodynamic descriptions of lower order systems, such as the Ti-Cr-C system, need to be well studied. To approach this goal, an extensive literature survey of t...

  13. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  14. Silicon carbide, an emerging high temperature semiconductor

    Science.gov (United States)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  15. Silicon carbide, an emerging high temperature semiconductor

    Science.gov (United States)

    Matus, Lawrence G.; Powell, J. Anthony

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  16. Carbides composite surface layers produced by (PTA)

    Energy Technology Data Exchange (ETDEWEB)

    Tajoure, Meloud, E-mail: Tajoore2000@yahoo.com [MechanicalEng.,HIHM,Gharian (Libya); Tajouri, Ali, E-mail: Tajouri-am@yahoo.com, E-mail: dr.mokhtarphd@yahoo.com; Abuzriba, Mokhtar, E-mail: Tajouri-am@yahoo.com, E-mail: dr.mokhtarphd@yahoo.com [Materials and Metallurgical Eng., UOT, Tripoli (Libya); Akreem, Mosbah, E-mail: makreem@yahoo.com [Industrial Research Centre,Tripoli (Libya)

    2013-12-16

    The plasma transferred arc technique was applied to deposit a composite layer of nickel base with tungsten carbide in powder form on to surface of low alloy steel 18G2A type according to polish standard. Results showed that, plasma transferred arc hard facing process was successfully conducted by using Deloro alloy 22 plus tungsten carbide powders. Maximum hardness of 1489 HV and minimum dilution of 8.4 % were achieved by using an arc current of 60 A. However, when the current was further increased to 120 A and the dilution increases with current increase while the hardness decreases. Microstructure of the nickel base deposit with tungsten carbide features uniform distribution of reinforcement particles with regular grain shape half - dissolved in the matrix.

  17. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  18. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  19. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  20. Ultrarapid microwave synthesis of superconducting refractory carbides

    Energy Technology Data Exchange (ETDEWEB)

    Vallance, Simon R. [Department of Chemical and Environmental Engineering, University of Nottingham (United Kingdom); School of Chemistry, University Nottingham (United Kingdom); Round, David M. [School of Chemistry, University Nottingham (United Kingdom); Ritter, Clemens [Institut Laue-Langevin, Grenoble (France); Cussen, Edmund J. [WestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow (United Kingdom); Kingman, Sam [Department of Chemical and Environmental Engineering, University of Nottingham (United Kingdom); Gregory, Duncan H. [WestCHEM, Department of Chemistry, University of Glasgow (United Kingdom)

    2009-11-26

    Nb{sub 1-x}Ta{sub x}C Carbides can be synthesized by high power MW methods in less than 30 s. In situ and ex situ techniques probing changes in temperature and dielectric properties with time demonstrate that the reactions self-terminate as the loss tangent of the materials decreases. The resulting carbides are carbon deficient and superconducting; T{sub c} correlates linearly to unit cell volume, reaching a maximum at NbC. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  1. Silicon carbide microsystems for harsh environments

    CERN Document Server

    Wijesundara, Muthu B J

    2011-01-01

    Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

  2. Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan;

    2012-01-01

    in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white...

  3. Ethylene glycol assisted low-temperature synthesis of boron carbide powder from borate citrate precursors

    Directory of Open Access Journals (Sweden)

    Rafi-ud-din

    2014-09-01

    Full Text Available B4C powders were synthesized by carbothermal reduction of ethylene glycol (EG added borate citrate precursors, and effects of EG additions (0–50 mol% based on citric acid on the morphologies and yields of synthesized B4C powders were investigated. The conditions most suitable for the preparation of precursor were optimized and optimum temperature for precursor formation was 650 °C. EG additions facilitated low-temperature synthesis of B4C at 1350 °C, which was around 100–300 °C lower temperature compared to that without EG additions. The lowering of synthesis temperature was ascribed to the enlargement of interfacial area caused by superior homogeneity and dispersibility of precursors enabling the diffusion of reacting species facile. The 20% EG addition was optimal with free residual carbon lowered to 4%. For smaller EG additions, the polyhedral and rod-like particles of synthesized product co-existed. With higher EG additions, the morphology of synthesized product was transformed into needle and blade-like structure.

  4. Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

    2015-03-25

    Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

  5. Sensing Characteristics of a Graphene-like Boron Carbide Monolayer towards Selected Toxic Gases.

    Science.gov (United States)

    Mahabal, Manasi S; Deshpande, Mrinalini D; Hussain, Tanveer; Ahuja, Rajeev

    2015-11-16

    By using first-principles calculations based on density functional theory, we study the adsorption efficiency of a BC3 sheet for various gases, such as CO, CO2, NO, NO2, and NH3. The optimal adsorption position and orientation of these gas molecules on the BC3 surface is determined and the adsorption energies are calculated. Among the gas molecules, CO2 is predicted to be weakly adsorbed on the graphene-like BC3 sheet, whereas the NH3 gas molecule shows a strong interaction with the BC3 sheet. The charge transfer between the molecules and the sheet is discussed in terms of Bader charge analysis and density of states. The calculated work function of BC3 in the presence of CO, CO2, and NO is greater than that of a bare BC3 sheet. The decrease in the work function of BC3 sheets in the presence of NO2 and NH3 further explains the affinity of the sheet towards the gas molecules. The energy gap of the BC3 sheets is sensitive to the adsorption of the gas molecules, which implies possible future applications in gas sensors.

  6. The thermoelectric properties of boron carbide%碳化硼的热电性能

    Institute of Scientific and Technical Information of China (English)

    丁硕; 温广武; 雷廷权; 周玉

    2003-01-01

    介绍了由Peltier效应和Seebeck效应发展起来的半导体热电材料的原理及其应用.碳化硼是最具潜力的高温热电材料之一.本文总结了碳化硼热电性能的最新研究成果,提出了其作为高温热电材料应用的限制因素以及解决的可能途径.

  7. Developing scandium and zirconium containing aluminum boron carbide metal matrix composites for high temperature applications

    Science.gov (United States)

    Lai, Jing

    The study presented in this thesis focuses on developing castable, precipitation-strengthened Al--B4C metal matrix composites (MMCs) for high temperature applications. In the first part, B4C plates were immersed in liquid aluminum alloyed with Sc, Zr and Ti to investigate the interfacial reactions between B4C and liquid aluminum The influences of Sc, Zr and Ti on the interfacial microstructure in terms of individual and combined additions were examined. Results reveal that all three elements reacted with B4C and formed interfacial layers that acted as a diffusion barrier to limit the decomposition of B4C in liquid aluminum. The interfacial reactions and the reaction products in each system were identified. With the combined addition of Sc, Zr and Ti, most of the Ti was found to enrich at the interface, which not only offered appropriate protection of the B4C but also reduced the consumption of Sc and Zr at the interface. In the second part, Sc and Zr were introduced into Al-15vol.% B 4C composites presaturated by Ti, and eight experimental composites with different Sc and Zr levels were prepared via a conventional casting technique. It was found that Sc was involved in the interfacial reactions with B 4C that partially consume Sc. The Sc addition yielded considerable precipitation strengthening in the as-cast and peak aged conditions. To achieve an equivalent strengthening effect of Sc in binary Al-Sc alloys, approximately double the amount of Sc is required in Al-B4C composites. On the contrary, no major Zr reaction products were found at the interfaces and the major part of Zr remained in the matrix for the precipitation strengthening. The combination of Sc and Zr enhanced sthe precipitation strengthening. Two kinds of nanoscale precipitates, Al3Sc and Al3(Sc, Zr), were found in the as-cast microstructure and contributed to the increase in the matrix hardness. In the third part, all the experimental composites were isothermally aged at 300, 350, 400 and 450°C after a homogenization/solution treatment. Results demonstrate that the addition of Sc generated a considerable precipitation hardening of the matrix of the composites for all aging temperatures applied. The precipitation hardening effect increased when increasing the Sc content and decreased with increase in aging temperature. The combination of alloying Sc and Zr in Al-B4C composites produced a remarkable synergistic effect. The addition of Zr provided not only a strength increase at peak aging but also an improvement of thermal stability. The composites with a high Zr:Sc ratio (≥1) showed excellent thermal stability of the strength up to 400°C. The overaging in these materials was delayed by ˜100°C compared with the Zr-free composites at the same Sc level. The precipitate volume fraction, the average radius and the size distribution of nanoscale Al3Sc and Al3(Sc,Zr) precipitates during the aging process were measured. The Al3(Sc,Zr) precipitates generally showed a much better coarsening resistance than the Al3Sc precipitates. In the fourth part, two experimental composites with 0.4wt.% Sc and 0.4wt.% Sc plus 0.24wt.% Zr 0were selected to examine the mechanical properties during long-term exposure (2000h) at elevated temperatures from 250 to 350°C. For long-term thermal stability, the mechanical properties of the Sc and Zr containing composite were stable up to 300°C, while the composite containing only Sc exhibited a good softening resistance up to 250°C. At higher temperatures the strengths of both composites decreased with prolonged annealing time. The reduction of the composites' mechanical properties during long-time annealing at higher temperatures was dominated by the precipitate coarsening. Finally, two experimental composites with 0.58wt.% Sc and 0.58wt.% Sc plus 0.24wt.% Zr, were respectively hot-rolled to a 2 mm thick sheet with a total reduction of 93%. Results indicate that the Sc- and Zr-containing composites possessed a good hot rolling processability. (Abstract shortened by UMI.)

  8. Densification of boron carbide at relatively low temperatures by hot pressing and hot isostatic pressing

    International Nuclear Information System (INIS)

    The poor sinterability of B4C limits its widespread application because both high temperatures and high pressures are required for a complete densification. Moreover, B4C suffers from a low strength and fracture toughness, possesses, however, a high potential because of its extreme hardness. Reaction hot pressing of B4C-WC-TiC-Si-Co mixtures resulting in B4C-TiB2-W2B5 composites of high density exhibit remarkable mechanical properties. The influence of hot isostatic pressing (HIP) on the microstructure and the mechanical properties is investigated in cooperation with participants of the COST 503 activities and related to the strengthening and toughening mechanisms. Difficulties during densification by HIP arise from the evaporation of adsorbed volatiles as well as from the strong swelling of the powder compact due to the sintering reaction. Several HIP cycle designs were tested in order to prevent the bloating of the capsule and to control internal stresses due to the misfit of the thermal expansion of the entire phases. In comparison to single phase B4C ceramics, bending strength was improved to 1030 MPa, KIc to 5.2 MPa/m, while hardness was comparable with HV1=38 GPa. Wear test were performed and related to the toughening mechanisms. (orig.) With 56 refs., 9 tabs., 64 figs

  9. Influence of magnetite, ilmenite and boron carbide on radiation attenuation of polyester composites

    International Nuclear Information System (INIS)

    This work is concerned with studying polyester/ magnetite CUP/Mag (ρ=2.75 g cm−3) and polyester/ ilmenite CUP/Ilm (ρ=2.7 g cm−3) composites for shielding of medical facilities, laboratory hot cells and for various purposes. Mechanical and physical properties such as compressive, flexural and impact strengths, as well as, a.c. electrical conductivity, specific heat, water absorption and porosity have been performed to evaluate the composite capabilities for radiation shielding. A collimated beam from fission 252Cf (100 µg) neutron source and neutron-gamma spectrometer with stilbene scintillator based on the zero cross over method and pulse shape discrimination (P.S.D.) technique have been used to measure neutron and gamma ray spectra. Fluxes of thermal neutrons have been measured using the BF3 detector and thermal neutron detection system. The attenuation parameters, namely macroscopic effective removal cross-section ΣR, total attenuation coefficient µ and macroscopic cross-section Σ of fast neutrons, gamma rays and thermal neutrons respectively have been evaluated. Theoretical calculations using MCNP–4C2 code was used to calculate ΣR,μ and Σ. Also, MERCSF-N program was used to calculate macroscopic effective removal cross-section ΣR. Measured and calculated results were compared and reasonable agreement was found. - Highlights: • Loaded polyester composites were investigated for radiation shielding. • Some mechanical and physical properties were examined. • Experimental and theoretical attenuation parameters were studied. • Experimental and theoretical (MCNP-4C2) results were in good agreement

  10. Influence of magnetite and boron carbide on radiation attenuation of cement-fiber/composite

    International Nuclear Information System (INIS)

    Trial was made to create composites from agriculture fibers, which have good mechanical, physical and radiation attenuation properties for different applications. Fast neutron and gamma ray spectra, as well as, slow neutron fluxes behind samples of cement-fiber (CF) (ρ=2.095 g cm-3) and cement-fiber-magnetite (CFM) (ρ=2.858 g cm-3)/composites have been investigated. Neutron and gamma spectra have been measured using a collimated reactor beam and neutron- gamma spectrometer with stilbene scintillator. A pulse shape discrimination technique based on zero cross over method was used to discriminate between neutron and gamma ray pulses. While, slow neutron fluxes have been measured using a collimated reactor beam and BF3 counter. Results were used to achieve removal cross sections (ΣR,meas.), total attenuation coefficients (μ) and macroscopic cross sections (Σ) of fast neutrons, gamma rays and slow neutrons respectively from the attenuation relations. Also, removal cross sections (ΣR,cal.) and total mass attenuation coefficients (μ/ρ) of fast neutrons and gamma rays have been calculated using the composites elemental composition and XCOM code respectively. Measured and calculated results were compared and a reasonable agreement was found

  11. Ultra-rapid processing of refractory carbides; 20 s synthesis of molybdenum carbide, Mo2C.

    Science.gov (United States)

    Vallance, Simon R; Kingman, Sam; Gregory, Duncan H

    2007-02-21

    The microwave synthesis of molybdenum carbide, Mo(2)C, from carbon and either molybdenum metal or the trioxide has been achieved on unprecedented timescales; Ex- and in-situ characterisation reveals key information as to how the reaction proceeds.

  12. Ceramic Fabric Coated With Silicon Carbide

    Science.gov (United States)

    Riccitiello, S. R.; Smith, M.; Goldstein, H.; Zimmerman, N.

    1988-01-01

    Material used as high-temperature shell. Ceramic fabric coated with silicon carbide (SiC) serves as tough, heat-resistant covering for other refractory materials. Developed to protect reusable insulating tiles on advanced space transportation systems. New covering makes protective glaze unnecessary. Used on furnace bricks or on insulation for engines.

  13. Direct plasmadynamic synthesis of ultradisperse silicon carbide

    Science.gov (United States)

    Sivkov, A. A.; Nikitin, D. S.; Pak, A. Ya.; Rakhmatullin, I. A.

    2013-01-01

    Ultradisperse cubic silicon carbide (β-SiC) has been obtained by direct plasmadynamic synthesis in pulsed supersonic carbon-silicon plasma jet incident on a copper obstacle in argon atmosphere. The powdered product has a high content of β-SiC in the form of single crystals with average size of about 100 nm and nearly perfect crystallographic habit.

  14. Casimir forces from conductive silicon carbide surfaces

    NARCIS (Netherlands)

    Sedighi Ghozotkhar, Mehdi; Svetovoy, V. B.; Broer, W. H.; Palasantzas, G.

    2014-01-01

    Samples of conductive silicon carbide (SiC), which is a promising material due to its excellent properties for devices operating in severe environments, were characterized with the atomic force microscope for roughness, and the optical properties were measured with ellipsometry in a wide range of fr

  15. Casimir force measurements from silicon carbide surfaces

    NARCIS (Netherlands)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-01-01

    Using an atomic force microscope we performed measurements of the Casimir force between a gold-coated (Au) microsphere and doped silicon carbide (SiC) samples. The last of these is a promising material for devices operating under severe environments. The roughness of the interacting surfaces was mea

  16. High-temperature carbidization of carboniferous rocks

    Science.gov (United States)

    Goldin, B. A.; Grass, V. E.; Nadutkin, A. V.; Nazarova, L. Yu.

    2009-08-01

    Processes of thermal metamorphism of carboniferous rocks have been studied experimentally. The conditions of high-temperature interaction of shungite carbon with components of the contained rocks, leading to formation of carbide compounds, have been determined. The results of this investigation contribute to the works on searching for new raw material for prospective material production.

  17. Bioactivation of biomorphous silicon carbide bone implants.

    Science.gov (United States)

    Will, Julia; Hoppe, Alexander; Müller, Frank A; Raya, Carmen T; Fernández, Julián M; Greil, Peter

    2010-12-01

    Wood-derived silicon carbide (SiC) offers a specific biomorphous microstructure similar to the cellular pore microstructure of bone. Compared with bioactive ceramics such as calcium phosphate, however, silicon carbide is considered not to induce spontaneous interface bonding to living bone. Bioactivation by chemical treatment of biomorphous silicon carbide was investigated in order to accelerate osseointegration and improve bone bonding ability. Biomorphous SiC was processed from sipo (Entrandrophragma utile) wood by heating in an inert atmosphere and infiltrating the resulting carbon replica with liquid silicon melt at 1450°C. After removing excess silicon by leaching in HF/HNO₃ the biomorphous preform consisted of β-SiC with a small amount (approximately 6wt.%) of unreacted carbon. The preform was again leached in HCl/HNO₃ and finally exposed to CaCl₂ solution. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared analyses proved that oxidation of the residual carbon at the surface induced formation of carboxyl [COO⁻] groups, which triggered adsorption of Ca(2+), as confirmed by XPS and inductively coupled plasma optical emission spectroscopy measurements. A local increase in Ca(2+) concentration stimulated in vitro precipitation of Ca₅(PO₄)₃OH (HAP) on the silicon carbide preform surface during exposure to simulated body fluid, which indicates a significantly increased bone bonding activity compared with SiC.

  18. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  19. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  20. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  1. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  2. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  3. Effect of Boron-Doped Diamond Interlayer on Cutting Performance of Diamond Coated Micro Drills for Graphite Machining

    Directory of Open Access Journals (Sweden)

    Zhiming Zhang

    2013-07-01

    Full Text Available Thin boron doped diamond (BDD film is deposited from trimethyl borate/acetone/hydrogen mixture on Co-cemented tungsten carbide (WC-Co micro drills by using the hot filament chemical vapor deposition (HFCVD technique. The boron peak on Raman spectrum confirms the boron incorporation in diamond film. This film is used as an interlayer for subsequent CVD of micro-crystalline diamond (MCD film. The Rockwell indentation test shows that boron doping could effectively improve the adhesive strength on substrate of as deposited thin diamond films. Dry drilling of graphite is chosen to check the multilayer (BDD + MCD film performance. For the sake of comparison, machining tests are also carried out under identical conditions using BDD and MCD coated micro drills with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results show that the multilayer (BDD + MCD coated micro drill exhibits the longest tool life. Therefore, thin BDD interlayer is proved to be a new viable alternative and a suitable option for adherent diamond coatings on micro cutting tools.

  4. Resonant soft x-ray reflectivity of Me/B(4)C multilayers near the boron K edge.

    Science.gov (United States)

    Ksenzov, Dmitriy; Schlemper, Christoph; Pietsch, Ullrich

    2010-09-01

    Energy dependence of the optical constants of boron carbide in the short period Ru/B(4)C and Mo/B(4)C multilayers (MLs) are evaluated from complete reflectivity scans across the boron K edge using the energy-resolved photon-in-photon-out method. Differences between the refractive indices of the B(4)Cmaterial inside and close to the surface are obtained from the peak profile of the first order ML Bragg peak and the reflection profile near the critical angle of total external reflection close to the surface. Where a Mo/B(4)C ML with narrow barrier layers appears as a homogeneous ML at all energies, a Ru/B(4)C ML exhibits another chemical nature of boron at the surface compared to the bulk. From evaluation of the critical angle of total external reflection in the energy range between 184 and 186eV, we found an enriched concentration of metallic boron inside the Ru-rich layer at the surface, which is not visible in other energy ranges.

  5. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  6. The coloring problem in the solid-state metal boride carbide ScB{sub 2}C{sub 2}. A theoretical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Lassoued, Souheila [Universite de Rennes, Ecole Nationale Superieure de Chimie, UMR 6226 CNRS (France). Inst. des Sciences Chimiques; Universite Kasdi Merbah-Ouargla (Algeria). Faculte des Mathematiques et des Sciences de la Matiere; Boucher, Benoit [Universite de Rennes, Ecole Nationale Superieure de Chimie, UMR 6226 CNRS (France). Inst. des Sciences Chimiques; Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany); Boutarfaia, Ahmed [Universite Kasdi Merbah-Ouargla (Algeria). Faculte des Mathematiques et des Sciences de la Matiere; Gautier, Regis; Halet, Jean-Francois [Universite de Rennes, Ecole Nationale Superieure de Chimie, UMR 6226 CNRS (France). Inst. des Sciences Chimiques

    2016-08-01

    The electronic properties of the layered ternary metal boride carbide ScB{sub 2}C{sub 2}, the structure of which consists of B/C layers made of fused five- and seven-membered rings alternating with scandium sheets, are analyzed. In particular, the respective positions of the B and C atoms (the so-called coloring problem) are tackled using density functional theory, quantum theory of atoms in molecules, and electron localizability indicator calculations. Results reveal that (i) the most stable coloring minimizes the number of B-B and C-C contacts and maximizes the number of boron atoms in the heptagons, (ii) the compound is metallic in character, and (iii) rather important covalent bonding occurs between the metallic sheets and the boron-carbon network.

  7. Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

    Science.gov (United States)

    Sullivan, Roy M.

    2016-01-01

    The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

  8. Boron water quality for the Plynlimon catchments

    Directory of Open Access Journals (Sweden)

    C. Neal

    1997-01-01

    Full Text Available Boron concentrations in rainfall, throughfall and stemflow for Spruce stands, mist, streamwater and groundwater are compared with chloride to assess atmospheric sources and catchment input-output balances for the Plynlimon catchments. In rainfall, boron concentration averages about 4.5 μg-B l-1 and approximately two thirds of this comes from anthropogenic sources. In through-fall and stemflow, boron concentrations are approximately a factor of ten times higher than in rainfall. This increase is associated with enhanced scavenging of mist and dry deposition by the trees. As the sampling sites were close to a forest edge, this degree of scavenging is probably far higher than in the centre of the forest. The throughfall and stemflow concentrations of boron show some evidence of periodic variations with time with peak concentrations occurring during the summer months indicating some vegetational cycling. In mist, boron concentrations are almost twenty times higher than in rainfall and anthropogenic sources account for about 86% of this. Within the Plynlimon streams, boron concentrations are about 1.4 to 1.7 times higher than in rainfall. However, after allowance for mist and dry deposition contributions to atmospheric deposition, it seems that, on average, about 30% of the boron input is retained within the catchment. For the forested catchments, felling results in a disruption of the biological cycle and a small increase in boron leaching from the catchment results in the net retention by the catchment being slightly reduced. Despite the net uptake by the catchment, there is clear evidence of a boron component of weathering from the bedrock. This is shown by an increased boron concentration in a stream influenced by a nearby borehole which increased groundwater inputs. The weathering component for boron is also observed in Plynlimon groundwaters as boron concentrations and boron to chloride ratios are higher than for the streams. For these

  9. Boron Separation by the Two-step Ion-Exchange for the Isotopic Measurement of Boron

    Institute of Scientific and Technical Information of China (English)

    WANG,Qing-Zhong(王庆忠); XIAO,Ying-Kai(肖应凯); WANG,Yun-Hui(王蕴惠); ZHANG,Chong-Geng(张崇耿); WEI,Hai-Zhen(魏海珍)

    2002-01-01

    An improved procedure for extraction and purification of boron from natural samples is presented. The separation and purification of boron was carried out using a boron-specific resin, Amberlite IRA743, and a mixed ion exchange resin,Dowex 50W × 8 and Ion Exchanger Ⅱ resin. Using the mixed ion exchange resin which adsorbs all cations and anions except boron, the HCl and other cations and anions left in eluant from the Amberlite IRA 743 were removed effectively. In this case, boron loss can be avoided because the boron-bearing solution does not have to be evaporated to reach dryness to dislodge HCl. The boron recovery ranged from 97.6% to 102% in this study. The isotopic fractionation of boron can be negligible within the precision of the isotopic measurement. The results show that boron separation for the isotopic measurement by using both Amberlite IRA 743 resin and the mixed rein is more effective than that using Amberlite IRA 743 resin alone. The boron in samples of brine, seawater, rock, coral and foraminifer were separated by this procedure. Boron isotopic compositions of these samples were measured by thermal ionization mass spectrometry in this study.

  10. Hadfield steels with Nb and Ti carbides

    International Nuclear Information System (INIS)

    The Hadfield Steels and the mechanisms responsible for its high strain hardening rate were reviewed. Addition of carbide forming alloying elements to the base compostion was discussed, using the matrix sttel concept. Three experimental crusher jaws were cast, with Nb and Nb + Ti added to the usual Hadfiedl compostion, with enough excess carbon to allow the formation of MC carbides. Samples for metallographic analysis were prepared from both as cast and worn out castings. The carbic morphology was described. Partition of alloying elements was qualitatively studied, using Energy Dispersive Espectroscopy in SEM. The structure of the deformed layer near the worn surface was studied by optical metalography and microhardness measurements. The results showed that fatigue cracking is one of the wear mechanisms is operation in association with the ciclic work hardening of the surface of worn crusher jaws. (Author)

  11. An improved method of preparing silicon carbide

    International Nuclear Information System (INIS)

    A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH3)2Si][CH3Si]. The polysilane contains from 0 to 60 mole percent (CH3)2Si units and from 40 to 100 mole percent CH3Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 1500C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

  12. Reliable Breakdown Obtained in Silicon Carbide Rectifiers

    Science.gov (United States)

    Neudeck, Philip G.

    1997-01-01

    The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

  13. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  14. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  15. Magnetism of hydrogen-irradiated silicon carbide

    International Nuclear Information System (INIS)

    Spin-polarized density functional theory is used to study two-hydrogen defect complexes in silicon carbide. We find that the magnetism depends on the distances of the two hydrogen atoms. Magnetism appears when the two hydrogen defects are distant from each other, and magnetism cancels out if they are close to each other. The critical distance between the two hydrogen defects is determined.

  16. Interaction of energetic tritium with silicon carbide

    International Nuclear Information System (INIS)

    In order to investigate the physical and chemical interactions of energetic hydrogen isotope species with silicon carbide, recoil tritium from the 3He(n,p)T reaction has been allowed to react with K-T silicon carbide and silicon carbide powder. The results show that if the silicon carbide has been degassed and annealed at 14000C prior to tritium bombardment, a considerable fraction of the tritium (ca. 40%) is released as HTO from the SiC upon heating to 13500C under vacuum conditions. Most of the remaining tritium is retained in SiC, e.g., the retention of the tritium in the K-T SiC was found to be 62 and 22% upon heating to 600 and 13500C, respectively. This is in direct contrast to graphite samples in which the tritium is not released to any significant extent even when heated to 13500C. Samples which were exposed to H2O and H2 prior to tritium bombardment were heated to 6000C after the irradiation. The results obtained indicate that a total of 38.7 and 2.49% of the tritium is released in the form of HT and CH3T in the case of H2 or H2O exposure, respectively. Treatment of degassed samples after tritium bombardment with H2O and H2 at temperatures up to 10000C leads to the release of up to 44.9% of the tritium as HT and CH3T. 42 references, 2 figures, 2 tables

  17. Diamond-silicon carbide composite and method

    Science.gov (United States)

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  18. Cutting Performance and Mechanism of RE Carbide Tools

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The research of rare earth elements (RE), added into cemented carbide tools, is one of the recent developments of new types of tool materials in China. Systematic experiments about RE carbides YG8R (K30), YT14R (P20) and YW1R (M10) were made to study on the cutting performance in comparison with non-RE carbides YG8, YT14 and YW1. The cutting experiments were as follows: tool life, cutting force, tool-chip friction coefficient and interrupted machining. The action of RE on the carbide materials and the cutting mechanism of the RE carbide tools in the cutting process were verified with the aid of SEM and energy spectrum analysis. Experimental results show that the RE carbide tools have a good overall performance.

  19. Nonlinear optical imaging of defects in cubic silicon carbide epilayers.

    Science.gov (United States)

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Matei, Alecs; Stanciu, George A

    2014-06-11

    Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrates that optical second harmonic generation imaging represents a viable solution for characterizing structural defects such as stacking faults, dislocations and double positioning boundaries in cubic silicon carbide layers. X-ray diffraction and optical second harmonic rotational anisotropy were used to confirm the growth of the cubic polytype, atomic force microscopy was used to support the identification of silicon carbide defects based on their distinct shape, while second harmonic generation microscopy revealed the detailed structure of the defects. Our results show that this fast and noninvasive investigation method can identify defects which appear during the crystal growth and can be used to certify areas within the silicon carbide epilayer that have optimal quality.

  20. Boronated mesophase pitch coke for lithium insertion

    Science.gov (United States)

    Frackowiak, E.; Machnikowski, J.; Kaczmarska, H.; Béguin, F.

    Boronated carbons from mesophase pitch have been used as materials for lithium storage in Li/carbon cells. Doping by boron has been realized by co-pyrolysis of coal tar pitch with the pyridine-borane complex. Amount of boron in mesocarbon microbeads (MCMB) varied from 1.4 to 1.8 wt.% affecting the texture of carbon. Optical microscopy and X-ray diffractograms have shown tendency to more disordered structure for boron-doped carbon. The values of specific reversible capacity ( x) varied from 0.7 to 1.1 depending significantly on the final temperature of pyrolysis (700-1150°C). The optimal charge/discharge performance was observed for boronated carbon heated at 1000°C.

  1. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  2. Effects of configurational disorder on the elastic properties of icosahedral boron-rich alloys based on B6O, B13C2, and B4C, and their mixing thermodynamics

    Science.gov (United States)

    Ektarawong, A.; Simak, S. I.; Hultman, L.; Birch, J.; Tasnádi, F.; Wang, F.; Alling, B.

    2016-04-01

    The elastic properties of alloys between boron suboxide (B6O) and boron carbide (B13C2), denoted by (B6O)1-x(B13C2)x, as well as boron carbide with variable carbon content, ranging from B13C2 to B4C are calculated from first-principles. Furthermore, the mixing thermodynamics of (B6O)1-x(B13C2)x is studied. A superatom-special quasirandom structure approach is used for modeling different atomic configurations, in which effects of configurational disorder between the carbide and suboxide structural units, as well as between boron and carbon atoms within the units, are taken into account. Elastic properties calculations demonstrate that configurational disorder in B13C2, where a part of the C atoms in the CBC chains substitute for B atoms in the B12 icosahedra, drastically increase the Young's and shear modulus, as compared to an atomically ordered state, B12(CBC). These calculated elastic moduli of the disordered state are in excellent agreement with experiments. Configurational disorder between boron and carbon can also explain the experimentally observed almost constant elastic moduli of boron carbide as the carbon content is changed from B4C to B13C2. The elastic moduli of the (B6O)1-x(B13C2)x system are also practically unchanged with composition if boron-carbon disorder is taken into account. By investigating the mixing thermodynamics of the alloys, in which the Gibbs free energy is determined within the mean-field approximation for the configurational entropy, we outline the pseudo-binary phase diagram of (B6O)1-x(B13C2)x. The phase diagram reveals the existence of a miscibility gap at all temperatures up to the melting point. Also, the coexistence of B6O-rich as well as ordered or disordered B13C2-rich domains in the material prepared through equilibrium routes is predicted.

  3. Microstructural and Mechanical characterization of WC-Co cemented carbides

    OpenAIRE

    Zakia, Rizki

    2013-01-01

    WC-Co cemented carbides are ceramic-metal composite materials made of carbides embedded in a metal phase that acts as a binder. They exhibit an exceptional combination of strength, toughness and wear resistance as a result of the extremely different properties of their two constitutive phases. Consequently, cemented carbides have been positioned as suitable options when selecting materials for tribomechanical applications, and their implementation continues to gain a place in t...

  4. Delivering carbide ligands to sulfide-rich clusters.

    Science.gov (United States)

    Reinholdt, Anders; Herbst, Konrad; Bendix, Jesper

    2016-02-01

    The propensity of the terminal ruthenium carbide Ru(C)Cl2(PCy3)2 (RuC) to form carbide bridges to electron-rich transition metals enables synthetic routes to metal clusters with coexisting carbide and sulfide ligands. Electrochemical experiments show the Ru≡C ligand to exert a relatively large electron-withdrawing effect compared with PPh3, effectively shifting redox potentials.

  5. Tungsten carbide platelet-containing cemented carbide with yttrium containing dispersed phase

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li; CHEN Shu; WANG Yuan-jie; YU Xian-wang; XIONG Xiang-jun

    2008-01-01

    A fine and platelet tungsten carbide patterned structure with fine yttrium containing dispersed phase was observed in liquid phase sintered WC-20%Co-1%Y2O3 cemented carbide with ultrafine tungsten carbide and nano yttrium oxide as starting materials. By comparing the microstructures of the alloy prepared by hot-press at the temperature below the eutectic melting temperature and by conventional liquid phase sintering, it is shown that hexagonal and truncated trigonal plate-like WC grains are formed through the mechanism of dissolution-precipitation (recrystallization) at the stage of liquid phase sintering. Yttrium in the addition form of oxide exhibits good ability in inhibiting the discontinuous or inhomogeneous WC grain growth in the alloy at the stage of solid phase sintering.

  6. Boron enrichment in martian clay.

    Science.gov (United States)

    Stephenson, James D; Hallis, Lydia J; Nagashima, Kazuhide; Freeland, Stephen J

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  7. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  8. Carbides in Nodular Cast Iron with Cr and Mo

    Directory of Open Access Journals (Sweden)

    S. Pietrowski

    2007-07-01

    Full Text Available In these paper results of elements microsegregation in carbidic nodular cast iron have been presented. A cooling rate in the centre of the cross-section and on the surface of casting and change of moulding sand temperature during casting crystallization and its self-cooling have been investigated. TDA curves have been registered. The linear distribution of elements concentration in an eutectic grain, primary and secondary carbides have been made. It was found, that there are two kinds of carbides: Cr and Mo enriched. A probable composition of primary and secondary carbides have been presented.

  9. Thermodynamic and kinetic study of uranium carbide pyrophoricity

    International Nuclear Information System (INIS)

    This research thesis concerns the development of nuclear reactors of fourth generation, and more particularly the use of carbide fuels instead of oxide fuels. An experimental part allows the investigation of mechanisms resulting in the pyrophoric reaction of a powder of uranium carbide, and addresses the determination of kinetic parameters intrinsic to the oxidation of powdered uranium carbide. Experimental results are then used to develop models of oxidation of powders of carbide uranium which are applied to a simplified mono-dispersed powder, and then introduced in a computation code. Simulation results are compared with experimental results

  10. Silicon Carbide Corrugated Mirrors for Space Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

  11. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  12. Continuous method of producing silicon carbide fibers

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

    1999-01-01

    This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

  13. Boron nanoparticles inhibit turnour growth by boron neutron capture therapy in the murine B16-OVA model

    DEFF Research Database (Denmark)

    Petersen, Mikkel Steen; Petersen, Charlotte Christie; Agger, Ralf;

    2008-01-01

    Background: Boron neutron capture therapy usually relies on soluble, rather than particulate, boron compounds. This study evaluated the use of a novel boron nanoparticle for boron neutron capture therapy. Materials and Methods: Two hundred and fifty thousand B16-OVA tumour cells, pre...

  14. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    OpenAIRE

    Yuya Egawa; Ryotaro Miki; Toshinobu Seki

    2014-01-01

    In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conj...

  15. Synthesis and characterization of ammonium phosphate fertilizers with boron

    OpenAIRE

    ANGELA MAGDA; RODICA PODE; CORNELIA MUNTEAN; MIHAI MEDELEANU; ALEXANDRU POPA

    2010-01-01

    The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the ...

  16. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  17. X-ray diffraction study of boron produced by pyrolysis of boron tribromide

    Science.gov (United States)

    Rosenberg, David

    The goal of this research was to determine the composition of boron deposits produced by pyrolysis of boron tribromide, and to use the results to (a) determine the experimental conditions (reaction temperature, etc.) necessary to produce alpha-rhombohedral boron and (b) guide the development/refinement of the pyrolysis experiments such that large, high purity crystals of alpha-rhombohedral boron can be produced with consistency. Developing a method for producing large, high purity alpha-rhombohedral boron crystals is of interest because such crystals could potentially be used to achieve an alpha-rhombohedral boron based neutron detector design (a solid-state detector) that could serve as an alternative to existing neutron detector technologies. The supply of neutron detectors in the United States has been hampered for a number of years due to the current shortage of helium-3 (a gas used in many existing neutron detector technologies); the development of alternative neutron detector technology such as an alpha-rhombohedral boron based detector would help provide a more sustainable supply of neutron detectors in this country. In addition, the prospect/concept of an alpha-rhombohedral boron based neutron detector is attractive because it offers the possibility of achieving a design that is smaller, longer life, less power consuming, and potentially more sensitive than existing neutron detectors. The main difficulty associated with creating an alpha-rhombohedral boron based neutron detector is that producing large, high purity crystals of alpha-rhombohedral boron is extremely challenging. Past researchers have successfully made alpha-rhombohedral boron via a number of methods, but no one has developed a method for consistently producing large, high purity crystals. Alpha-rhombohedral boron is difficult to make because it is only stable at temperatures below around 1100-1200 °C, its formation is very sensitive to impurities, and the conditions necessary for its

  18. Synthesis of Boron Nanorods by Smelting Non-Toxic Boron Oxide in Liquid Lithium

    OpenAIRE

    Amartya Chakrabarti; Tao Xu; Laura K. Paulson; Krise, Kate J.; Maguire, John A; Hosmane, Narayan S.

    2010-01-01

    In contrast to the conventional bottom-up syntheses of boron nanostructures, a unique top-down and greener synthetic strategy is presented for boron nanorods involving nontoxic boron oxide powders ultrasonically smelted in liquid lithium under milder conditions. The product was thoroughly characterized by energy dispersive X-ray analysis, atomic emission spectroscopy, thermogravimetric analysis and, UV-Vis spectroscopy, including structural characterization by transmission electron microscop...

  19. Developments in boron magnetic resonance imaging (MRI)

    Energy Technology Data Exchange (ETDEWEB)

    Schweizer, M.

    1995-11-01

    This report summarizes progress during the past year on maturing Boron-11 magnetic resonance imaging (MRI) methodology for noninvasive determination of BNCT agents (BSH) spatially in time. Three major areas are excerpted: (1) Boron-11 MRI of BSH distributions in a canine intracranial tumor model and the first human glioblastoma patient, (2) whole body Boron-11 MRI of BSH pharmacokinetics in a rat flank tumor model, and (3) penetration of gadolinium salts through the BBB as a function of tumor growth in the canine brain.

  20. First boronization in KSTAR: Experiences on carborane

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Suk-Ho, E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Kun-Su; Kim, Kwang-Pyo; Kim, Kyung-Min; Kim, Hong-Tack [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, Jong-Ho; Woo, Hyun-Jong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Park, Jae-Min [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Park, Eun-Kyong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Woong-Chae; Kim, Hak-Kun; Park, Kap-Rai; Yang, Hyung-Lyeol; Oh, Yeong-Kook; Na, Hoon-Kyun [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Lho, Taehyeop [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, Kyu-Sun [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2011-08-01

    First boronization was performed in KSTAR tokamak during 2009 campaign in order to reduce oxygen impurities and to lower the power loss due to radiation. We report the results from the experiences on carborane during the first boronization in KSTAR. After the boronization, H{sub 2}O and O{sub 2} level in the vacuum vessel are reduced significantly. The characteristics of the deposited thin films were analyzed by variable angle spectroscopic ellipsometry, XPS, and AES. {approx}1.78 x 10{sup 16} cm{sup -2} s{sup -1} of carbon flux on the wall is estimated by using cavity technique.