WorldWideScience

Sample records for block polymer-microfabricated silicon

  1. Flexible, Penetrating Brain Probes Enabled by Advances in Polymer Microfabrication

    Directory of Open Access Journals (Sweden)

    Ahuva Weltman

    2016-10-01

    Full Text Available The acquisition of high-fidelity, long-term neural recordings in vivo is critically important to advance neuroscience and brain–machine interfaces. For decades, rigid materials such as metal microwires and micromachined silicon shanks were used as invasive electrophysiological interfaces to neurons, providing either single or multiple electrode recording sites. Extensive research has revealed that such rigid interfaces suffer from gradual recording quality degradation, in part stemming from tissue damage and the ensuing immune response arising from mechanical mismatch between the probe and brain. The development of “soft” neural probes constructed from polymer shanks has been enabled by advancements in microfabrication; this alternative has the potential to mitigate mismatch-related side effects and thus improve the quality of recordings. This review examines soft neural probe materials and their associated microfabrication techniques, the resulting soft neural probes, and their implementation including custom implantation and electrical packaging strategies. The use of soft materials necessitates careful consideration of surgical placement, often requiring the use of additional surgical shuttles or biodegradable coatings that impart temporary stiffness. Investigation of surgical implantation mechanics and histological evidence to support the use of soft probes will be presented. The review concludes with a critical discussion of the remaining technical challenges and future outlook.

  2. Fabrication of thick silicon nitride blocks embedded in low-resistivity silicon substrates for radio frequency applications

    NARCIS (Netherlands)

    Fernandez, L.J.; Berenschot, Johan W.; Wiegerink, Remco J.; Flokstra, Jakob; Flokstra, Jan; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior.

  3. Simulated Space Environment Effects on the Blocking Force of Silicone Adhesive

    Science.gov (United States)

    Boeder, Paul; Mikatarian, Ron; Koontz, Steve; Albyn, Keith; Finckenor, Miria

    2005-01-01

    The International Space Station (ISS) solar arrays utilize MD-944 diode tape to protect the underlying diodes in the solar array panel circuit and also provide thermal conditioning and mechanical support. The diode tape consists of silicone pressure sensitive adhesive (Dow Coming QC-7725) with a protective Kapton over-layer. On-orbit, the Kapton over-layer will erode under exposure to atomic oxygen (AO) and the underlying exposed silicone adhesive will ultimately convert, under additional AO exposure, to a glass like silicate. The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 months or more) during ISS assembly. With the Kapton over-layer eroded away, the exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. Previous testing by Lockheed-Martin Space Systems (LMSS) characterized silicone blocking following exposure to low energy atomic oxygen (AO) in an asher facility, but this is believed to be conservative. An additional series of tests was performed by the Environmental Effects Group at MSFC under direction from the ISS Program Office Environments Team. This test series included high energy AO (5 eV), near ultraviolet (NUV) radiation and ionizing radiation, singly and in combination. Additional samples were exposed to thermal energy AO (tape samples were exposed to each environment constituent individually, put under preload for seven days and then the resulting blocking force was measured using a tensile machine. Additional samples were exposed to AO, NUV and electrons in series and then put under long term (three to ten months) preload to determine the effect of preload duration on the resulting blocking force of the silicone-to-silicone bond. Test results indicate that high energy AO, ultraviolet radiation and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure

  4. HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, James [Princeton Univ., NJ (United States)

    2017-12-04

    This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

  5. Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

    Science.gov (United States)

    Barba, D.; Wang, C.; Nélis, A.; Terwagne, G.; Rosei, F.

    2018-04-01

    We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.

  6. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    Energy Technology Data Exchange (ETDEWEB)

    Huo, Yuchen [Department of Materials Science and Engineering, University of Florida, Rhines Hall 100, Gainesville, FL 32611 (United States); Ketelson, Howard [Alcon Inc., Research and Development, Vision Care, 6201 South Freeway, Fort Worth, TX 76134 (United States); Perry, Scott S., E-mail: ssp@mse.ufl.edu [Department of Materials Science and Engineering, University of Florida, Rhines Hall 100, Gainesville, FL 32611 (United States)

    2013-05-15

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO–BO). The extent of lens surface modification by EO–BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision{sup ®} (balafilcon A) and O{sub 2}OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE{sup ®} Oasys{sup ®} (senofilcon A) and Biofinity{sup ®} (comfilcon A) was limited. As for bulk absorption, the amount of EO–BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO–BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  7. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    Science.gov (United States)

    Huo, Yuchen; Ketelson, Howard; Perry, Scott S.

    2013-05-01

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO-BO). The extent of lens surface modification by EO-BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision® (balafilcon A) and O2OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE® Oasys® (senofilcon A) and Biofinity® (comfilcon A) was limited. As for bulk absorption, the amount of EO-BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO-BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  8. Importance of crystallinity of anchoring block of semi-solid amphiphilic triblock copolymers in stabilization of silicone nanoemulsions.

    Science.gov (United States)

    Le Kim, Trang Huyen; Jun, Hwiseok; Nam, Yoon Sung

    2017-10-01

    Polymer emulsifiers solidified at the interface between oil and water can provide exceptional dispersion stability to emulsions due to the formation of unique semi-solid interphase. Our recent works showed that the structural stability of paraffin-in-water emulsions highly depends on the oil wettability of hydrophobic block of methoxy poly(ethylene glycol)-block-poly(ε-caprolactone) (mPEG-b-PCL). Here we investigate the effects of the crystallinity of hydrophobic block of triblock copolymer-based emulsifiers, PCLL-b-PEG-b-PCLL, on the colloidal properties of silicone oil-in-water nanoemulsions. The increased ratio of l-lactide to ε-caprolactone decreases the crystallinity of the hydrophobic block, which in turn reduces the droplet size of silicone oil nanoemulsions due to the increased chain mobility at the interface. All of the prepared nanoemulsions are very stable for a month at 37°C. However, the exposure to repeated freeze-thaw cycles quickly destabilizes the nanoemulsions prepared using the polymer with the reduced crystallinity. This work demonstrates that the anchoring chain crystallization in the semi-solid interphase is critically important for the structural robustness of nanoemulsions under harsh physical stresses. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Nanoscale silicon substrate patterns from self-assembly of cylinder forming poly(styrene)-block-poly(dimethylsiloxane) block copolymer on silane functionalized surfaces.

    Science.gov (United States)

    Borah, Dipu; Cummins, Cian; Rasappa, Sozaraj; Watson, Scott M D; Pike, Andrew R; Horrocks, Benjamin R; Fulton, David A; Houlton, Andrew; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Morris, Michael A

    2017-01-27

    Poly(styrene)-block-poly(dimethylsiloxane) (PS-b-PDMS) is an excellent block copolymer (BCP) system for self-assembly and inorganic template fabrication because of its high Flory-Huggins parameter (χ ∼ 0.26) at room temperature in comparison to other BCPs, and high selective etch contrast between PS and PDMS block for nanopatterning. In this work, self-assembly in PS-b-PDMS BCP is achieved by combining hydroxyl-terminated poly(dimethylsiloxane) (PDMS-OH) brush surfaces with solvent vapor annealing. As an alternative to standard brush chemistry, we report a simple method based on the use of surfaces functionalized with silane-based self-assembled monolayers (SAMs). A solution-based approach to SAM formation was adopted in this investigation. The influence of the SAM-modified surfaces upon BCP films was compared with polymer brush-based surfaces. The cylinder forming PS-b-PDMS BCP and PDMS-OH polymer brush were synthesized by sequential living anionic polymerization. It was observed that silane SAMs provided the appropriate surface chemistry which, when combined with solvent annealing, led to microphase segregation in the BCP. It was also demonstrated that orientation of the PDMS cylinders may be controlled by judicious choice of the appropriate silane. The PDMS patterns were successfully used as an on-chip etch mask to transfer the BCP pattern to underlying silicon substrate with sub-25 nm silicon nanoscale features. This alternative SAM/BCP approach to nanopattern formation shows promising results, pertinent in the field of nanotechnology, and with much potential for application, such as in the fabrication of nanoimprint lithography stamps, nanofluidic devices or in narrow and multilevel interconnected lines.

  10. Sub-15nm Silicon Lines Fabrication via PS-b-PDMS Block Copolymer Lithography

    DEFF Research Database (Denmark)

    Rasappa, Sozaraj; Schulte, Lars; Borah, Dipu

    2013-01-01

    -b-PDMS (33 k–17 k) was conditioned by applying solvent and solvothermal annealing techniques. BCP nanopatterns formed after the annealing process have been confirmed by scanning electron microscope (SEM) after removal of upper PDMS wetting layer by plasma etching. Silicon nanostructures were obtained...

  11. Tribological Properties of Silicone Rubber-Based Ceramizable Composites Destined for Wire Covers. Part I. Studies of Block-On-Ring Friction Contact

    OpenAIRE

    R. Anyszka; D.M. Bieliński; D. Strzelecki

    2015-01-01

    Ceramizable composites of silicone rubber matrix become more and more popular materials destined for wire covers, what can enhance fire safety of building increasing operation time of important equipment or devices (eg fire sprinklers, elevators, alarms etc). Aim of the research was to examine tribological properties and wear of commercially available silicone rubber-based ceramizable composites against steel, in configuration – steel block on composite ring, under various load (5, 10, 15, 20...

  12. Silicon-Carbide (SIC) Multichip Power Modules (MCPMS) For Power Building Block Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of developing high power density modular power electronic building blocks...

  13. Optimisation of Silicone-based Dielectric Elastomer Transducers by Means of Block Copolymers - Synthesis and Compounding

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam

    have been studied. Their actuation occurs when Maxwell stress exceeds elastic stress in the presence of an electrical field, resulting in contraction in thickness and planar expansion in the area. As well as an actuator, dielectric elastomers can be used as generators and sensors. As a dielectric...... enhancing the electrical breakdown strength of silicone by using an aromatic voltage stabiliser. Here, polyphenylmethylsiloxane (PPMS), which contained aromatic voltage stabilisers, was bonded covalently to PDMS through a hydrosilylation reaction obtaining PDMS-PPMS copolymers. The synthesised copolymers...

  14. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

    International Nuclear Information System (INIS)

    Liu, Zuwei; Sassolini, Simone; Olynick, Deirdre L; Gu, Xiaodan; Hwu, Justin

    2014-01-01

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature’s shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide. (paper)

  15. Tribological Properties of Silicone Rubber-Based Ceramizable Composites Destined for Wire Covers. Part I. Studies of Block-On-Ring Friction Contact

    Directory of Open Access Journals (Sweden)

    R. Anyszka

    2015-06-01

    Full Text Available Ceramizable composites of silicone rubber matrix become more and more popular materials destined for wire covers, what can enhance fire safety of building increasing operation time of important equipment or devices (eg fire sprinklers, elevators, alarms etc. Aim of the research was to examine tribological properties and wear of commercially available silicone rubber-based ceramizable composites against steel, in configuration – steel block on composite ring, under various load (5, 10, 15, 20, 25 and 30 N. Changes to friction force in time were monitored by a tribotester, whereas wear of the composite surfaces were determined using an optical microscope. Performed studies demonstrate, that tribological characteristics and wear of the composites depend significantly on the origin of material.

  16. Microwave- assisted Rapid Self- Assembly of Lamellar Forming Poly (styrene-b- lactic acid) (PS-b-PLA) Block Copolymer for Fabrication of Silicon Nanowires

    Science.gov (United States)

    Mokarian-Tabari, Parvaneh; Cummins, Cian; Rasappa, Sozaraj; Holmes, Justin D.; Morris, Michael M.

    2013-03-01

    Photolithography has been a fundamental process in the production of integrated circuits, but it is reaching its physical limit for generating ultra-small feature sizes. Block copolymers have a great potential as mask templates for fabricating nano features. Although ordered sub 20 nm features utilising BCPs have been achieved, lengthy annealing times (hours to days) are currently employed. Here we use microwave annealing, a new emerging technique, to achieve lateral phase separation in a lamellar forming PS-b-PLA. Having optimised the microwave conditions such as power, temperature, anneal holding time, solvents etc, a long range order line pattern was formed in less than two minutes on Si, Ge and Al substrates. The etched pattern (PLA removed by Ar/O2 RIE) was transferred to silicon substrate resulting in 18nm Si nanowires.

  17. Time-resolved single-photon detection module based on silicon photomultiplier: A novel building block for time-correlated measurement systems

    Energy Technology Data Exchange (ETDEWEB)

    Martinenghi, E., E-mail: edoardo.martinenghi@polimi.it; Di Sieno, L.; Contini, D.; Dalla Mora, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Sanzaro, M. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2016-07-15

    We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm{sup 2} together with the suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).

  18. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  19. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  20. Population Blocks.

    Science.gov (United States)

    Smith, Martin H.

    1992-01-01

    Describes an educational game called "Population Blocks" that is designed to illustrate the concept of exponential growth of the human population and some potential effects of overpopulation. The game material consists of wooden blocks; 18 blocks are painted green (representing land), 7 are painted blue (representing water); and the remaining…

  1. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  2. Integrated Silicon Carbide Power Electronic Block

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, Rahul [Global Power Technologies Group, Inc., Lake Forest, CA (United States)

    2017-11-07

    Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuit level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.

  3. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    Science.gov (United States)

    2017-03-10

    silicon transfer printed single wavelength laser . Introduction Silicon has long offered promise as the ultimate platform for realizing compact photonic...the field has faced a big stumbling block: the lack of an integrated laser source. Thus far, silicon-photonics applications have had to rely on...AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final

  4. Photovoltaic building blocks

    DEFF Research Database (Denmark)

    Hanberg, Peter Jesper; Jørgensen, Anders Michael

    2014-01-01

    efficiency of about 15% for commercial Silicon solar cells there is still much to gain. DTU Danchip provides research facilities, equipment and expertise for the building blocks that comprises fabricating the efficient solar cell. In order to get more of the sun light into the device we provide thin film......Photovoltaics (PV), better known as solar cells, are now a common day sight on many rooftops in Denmark.The installed capacity of PV systems worldwide is growing exponentially1 and is the third most importantrenewable energy source today. The cost of PV is decreasing fast with ~10%/year but to make...... it directcompetitive with fossil energy sources a further reduction is needed. By increasing the efficiency of the solar cells one gain an advantage through the whole chain of cost. So that per produced Watt of power less material is spent, installation costs are lower, less area is used etc. With an average...

  5. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  6. Allergy to pacemaker silicone compounds: recognition and surgical management.

    Science.gov (United States)

    Oprea, Mihaela L; Schnöring, Heike; Sachweh, Jörg S; Ott, Hagen; Biertz, Julia; Vazquez-Jimenez, Jaime F

    2009-04-01

    Silicone is a widely used biomaterial. Contact allergy, particularly to silicone components of pacemaker coatings, is uncommon. We present a 12-year-old girl with a history of complex congenital heart disease and acquired complete heart block excluding transvenous lead placement. Contact allergy to silicone led to multiple surgical interventions until the etiology for recurrent pacemaker wound complications was discovered. The key to diagnosis was a specific manufacturer's patch test. Complete removal of the former pacing system and placement of custom-made silicone free pacemaker components and epicardial use of silicone free transvenous leads were essential for successful therapy.

  7. Evaluation of Sealing Materials and Techniques for Installing Quoin and Miter Block Backing Grout

    Science.gov (United States)

    2015-11-01

    compiled based on results of the telephone survey of Dis- trict experiences with contact blocks. This list included one-part sealants ( silicone , urethane... Silicone Adhesive 3.15.1 Description Loctite 5607 is a low odor, silicone -based adhesive/ sealant designed for form-in-place gasketing of electronic...htm Henkel Corp. 2015b. Loctite 5607 silicone adhesive / sealant , grey. Henkel: Excellence is Our Passion. Mississauga, Ontario, Canada: Henkel

  8. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof...

  9. Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

    Science.gov (United States)

    Gamal, Rania; Shafaay, Sarah; Ismail, Yehea; Swillam, Mohamed A.

    2017-01-01

    We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

  10. Ultrasound guided supraclavicular block.

    LENUS (Irish Health Repository)

    Hanumanthaiah, Deepak

    2013-09-01

    Ultrasound guided regional anaesthesia is becoming increasingly popular. The supraclavicular block has been transformed by ultrasound guidance into a potentially safe superficial block. We reviewed the techniques of performing supraclavicular block with special focus on ultrasound guidance.

  11. Nanodevices based on silicon nanowires.

    Science.gov (United States)

    Wan, Yuting; Sha, Jian; Chen, Bo; Fang, Yanjun; Wang, Zongli; Wang, Yewu

    2009-01-01

    Silicon nanowires (SiNWs) have been demonstrated as one of the promising building blocks for future nanodevices such as field effect transistors, solar cells, sensors and lithium battery; much progress has been made in this field during last decades. In this review paper, the synthesis and physical properties of SiNWs are introduced briefly. Significant advances of SiNWs-related nanodevices reported in recent literature and registered patents are reviewed. The latest development and prospects of SiNWs-related nanodevices are also discussed.

  12. Homogeneous bilateral block shifts

    Indian Academy of Sciences (India)

    Douglas class were classified in [3]; they are unilateral block shifts of arbitrary block size (i.e. dim H(n) can be anything). However, no examples of irreducible homogeneous bilateral block shifts of block size larger than 1 were known until now.

  13. Internal friction in irradiated silicon

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Pajzullakhanov, M.S.; Khajdarov, T.; Ummatov, Kh.

    1999-01-01

    The submicroscopic heterogeneities in mono- and polycrystal silicon and the influence of X-ray radiation on them were investigated using the ultrasound resonance method. Disk-shaped samples of 27.5 mm in diameter and 4 mm in thickness, with the flat surface parallel to crystallographic plane (111), were irradiated by X-ray beam of 1 Wt/cm 2 (50 KeV, Mo K α ) during 10 hours. Relations of internal frictions (Q -1 ) of samples and their relative attitude (ψ) - Q -1 (ψ) show that there is a presence of double-humped configuration for monocrystal silicon with the peaks at ψ=900 and 270 degrees. The relations Q -1 (ψ) remain the same after the irradiation. However, the peak width becomes larger. This data show that the configuration and attitude of the heterogeneities remain the same after the irradiation. The double-humped configuration was not discovered for the relations Q -1 (ψ) of polycrystal silicon. It is explained by the fact that there is an isotropic distribution in the content of many blocks and granules

  14. Effects of nanostructurized silicon on proliferation of stem and cancer cell.

    Science.gov (United States)

    Osminkina, L A; Luckyanova, E N; Gongalsky, M B; Kudryavtsev, A A; Gaydarova, A Kh; Poltavtseva, R A; Kashkarov, P K; Timoshenko, V Yu; Sukhikh, G T

    2011-05-01

    In vitro experiments showed that stem and cancer cells retained their viability on the surface of porous silicon with 10-100 nm nanostructures, but their proliferation was inhibited. Silicon nanoparticles of 100 nm in size obtained by mechanical grinding of porous silicon films or crystal silicon plates in a concentration below 1 mg/ml in solution did not modify viability and proliferation of mouse fibroblast and human laryngeal cancer cells. Additional ultrasonic exposure of cancer cells in the presence of 1 mg/ml silicon nanoparticles added to nutrient medium led to complete destruction of cells or to the appearance of membrane defects blocking their proliferation and initiating their apoptotic death.

  15. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  16. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  17. An FPGA-Based Silicon Neuronal Network with Selectable Excitability Silicon Neurons.

    Science.gov (United States)

    Li, Jing; Katori, Yuichi; Kohno, Takashi

    2012-01-01

    This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN) and the transmitter release based silicon synapse, allow us to tune the excitability of silicon neurons and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with 256 full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

  18. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  19. Constructing metal-based structures on nanopatterned etched silicon.

    Science.gov (United States)

    Zhang, Xiaojiang; Qiao, Yinghong; Xu, Lina; Buriak, Jillian M

    2011-06-28

    Silicon surfaces with nanoscale etched patterns were obtained using polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP) block copolymer films as templates, followed by brief immersion in HF(aq). The resulting interfaces were comprised of pseudohexagonal arrays of pits on the silicon, whose shapes depended upon the chosen silicon orientation. The top unetched face of silicon remains capped by the native oxide, and the pit interiors are terminated by Si-H(x). Selective chemical functionalization via these two chemical handles was demonstrated to be a viable approach toward building nanostructured metal oxide and metal features within these silicon pits and on the top face. Using a series of interfacial chemical reactions, including oxidation (of Si-H(x)-terminated regions), hydrosilylation, and alkoxysilane-based chemistry on silicon oxide, the growth of metal-based structures can be spatially controlled. In the first approach, titania nanobowls were grown within the etch pits, and in the second, galvanic displacement was used to produce gold nanoparticles either within the etch pits, on the top silicon face, or both.

  20. Rigid rod spaced fullerene as building block for nanoclusters

    Indian Academy of Sciences (India)

    Unknown

    the possibilities of crafting similar systems.1–4 The key to such design strategy is our ability to organise simple molecular building blocks to nanostructured systems, ... AFM images were recorded using a Digital Nanoscope IIIa in tapping mode. An etched silicon tip was used as an AFM probe for imaging the samples.

  1. Block Copolymers: Synthesis and Applications in Nanotechnology

    Science.gov (United States)

    Lou, Qin

    ring-opening crosslinking and can act as a negative-tone photoresist. The PGMA-b-PS thin films were also studied for phase separation with ˜25 nm patterns using transmission electron microscopy (TEM). Poly(styrene-block-4-vinyl pyridine) (PS-b-P4VP) block copolymer thin films are shown to form perpendicular cylinder phase separated structures, and these may be used to template the formation of ordered titania nanostructures with sub-50 nm diameters on either silicon or indium tin oxide (ITO) substrates. A study of the mechanism of TiO2 formation within the P4VP cylinder phase was developed and tested. It was found that the titania nanostructure morphology is affected by pH and deposition temperatures, and successful deposition required the cross-linking of the P4VP phase in order to obtain individual nanostructures.

  2. Homogeneous bilateral block shifts

    Indian Academy of Sciences (India)

    A new 3-parameter family of homogeneous 2-by-2 block shifts is described. These are the first examples of irreducible homogeneous bilateral block shifts of block size larger than 1. Author Affiliations. Adam Korányi1. Department of Mathematics, The Graduate Center, City University of New York, New York, NY 10016, USA ...

  3. Periodic titania nanostructures using block copolymer templates.

    Science.gov (United States)

    Chinthamanipeta, Pavan S; Lou, Qin; Shipp, Devon A

    2011-01-25

    The deposition of periodic titania nanostructures, templated by a polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP) block copolymer, is reported. When cast as a thin film (30-50 nm thick), the PS-b-P4VP forms a morphology that consists of P4VP cylinders that are orientated perpendicular to the substrate. The P4VP phase was lightly cross-linked by exposing the film to diiodobutane. When the block copolymer film was exposed to the sol-gel titania precursor, titanium(IV) bis(ammonium lactate) dihydroxide (TALH), titania was formed in the P4VP phase. The resulting titania structures were identical in size to the P4VP cylinders and only formed (under the deposition conditions used in this study) when the block copolymer film was present on the substrate, thus providing evidence that the block copolymer indeed acts as a template. The process works for both silicon and indium tin oxide substrates.

  4. Rapid, Brushless Self-assembly of a PS-b-PDMS Block Copolymer for Nanolithography

    DEFF Research Database (Denmark)

    Rasappa, Sozaraj; Schulte, Lars; Borah, Dipu

    2014-01-01

    by grafting of a brush layer that renders the surface energy neutral relative to the constituent blocks. We provide here a first study on rapid, low temperature self-assembly of PS-b-PDMS (polystyrene-block-polydimethylsiloxane) on silicon substrates without a brush layer. We show that it forms line...

  5. Blocked Randomization with Randomly Selected Block Sizes

    Directory of Open Access Journals (Sweden)

    Jimmy Efird

    2010-12-01

    Full Text Available When planning a randomized clinical trial, careful consideration must be given to how participants are selected for various arms of a study. Selection and accidental bias may occur when participants are not assigned to study groups with equal probability. A simple random allocation scheme is a process by which each participant has equal likelihood of being assigned to treatment versus referent groups. However, by chance an unequal number of individuals may be assigned to each arm of the study and thus decrease the power to detect statistically significant differences between groups. Block randomization is a commonly used technique in clinical trial design to reduce bias and achieve balance in the allocation of participants to treatment arms, especially when the sample size is small. This method increases the probability that each arm will contain an equal number of individuals by sequencing participant assignments by block. Yet still, the allocation process may be predictable, for example, when the investigator is not blind and the block size is fixed. This paper provides an overview of blocked randomization and illustrates how to avoid selection bias by using random block sizes.

  6. Blocked randomization with randomly selected block sizes.

    Science.gov (United States)

    Efird, Jimmy

    2011-01-01

    When planning a randomized clinical trial, careful consideration must be given to how participants are selected for various arms of a study. Selection and accidental bias may occur when participants are not assigned to study groups with equal probability. A simple random allocation scheme is a process by which each participant has equal likelihood of being assigned to treatment versus referent groups. However, by chance an unequal number of individuals may be assigned to each arm of the study and thus decrease the power to detect statistically significant differences between groups. Block randomization is a commonly used technique in clinical trial design to reduce bias and achieve balance in the allocation of participants to treatment arms, especially when the sample size is small. This method increases the probability that each arm will contain an equal number of individuals by sequencing participant assignments by block. Yet still, the allocation process may be predictable, for example, when the investigator is not blind and the block size is fixed. This paper provides an overview of blocked randomization and illustrates how to avoid selection bias by using random block sizes.

  7. 31 CFR 595.301 - Blocked account; blocked property.

    Science.gov (United States)

    2010-07-01

    ... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY TERRORISM SANCTIONS REGULATIONS General Definitions § 595.301 Blocked account; blocked property. The terms blocked account and blocked...

  8. Breast Implants: Saline vs. Silicone

    Science.gov (United States)

    ... differ in material and consistency, however. Saline breast implants Saline implants are filled with sterile salt water. ... of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with silicone gel — ...

  9. An FPGA-based silicon neuronal network with selectable excitability silicon neurons

    Directory of Open Access Journals (Sweden)

    Jing eLi

    2012-12-01

    Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

  10. Generalized Block Failure

    DEFF Research Database (Denmark)

    Jönsson, Jeppe

    2015-01-01

    Block tearing is considered in several codes as a pure block tension or a pure block shear failure mechanism. However in many situations the load acts eccentrically and involves the transfer of a substantial moment in combination with the shear force and perhaps a normal force. A literature study...... shows that no readily available tests with a well-defined substantial eccentricity have been performed. This paper presents theoretical and experimental work leading towards generalized block failure capacity methods. Simple combination of normal force, shear force and moment stress distributions along...

  11. Silicon PIN diode array hybrids for charged particle detection

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.; Gaalema, S.

    1988-09-01

    We report on the design of silicon PIN diode array hybrids for use as charged particle detectors. A brief summary of the need for vertex detectors is presented. Circuitry, block diagrams and device specifications are included. 8 refs., 7 figs., 1 tab

  12. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  13. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  14. Black silicon integrated aperture

    Science.gov (United States)

    Liu, Tianbo; Dickensheets, David L.

    2017-10-01

    This paper describes the incorporation of nanotextured black silicon as an optical absorbing material into silicon-based micro-optoelectromechanical systems devices to reduce stray light and increase optical contrast during imaging. Black silicon is created through a maskless dry etch process and characterized for two different etch conditions, a cold etch performed at 0°C and a cryogenic etch performed at -110°C. We measure specular reflection at visible wavelengths to be black velvet paint used to coat optical baffles and compare favorably with other methods to produce black surfaces from nanotextured silicon or using carbon nanotubes. We illustrate the use of this material by integrating a black silicon aperture around the perimeter of a deformable focus-control mirror. Imaging results show a significant improvement in contrast and image fidelity due to the effective reduction in stray light achieved with the self-aligned black aperture.

  15. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    plasma effect have been tested up to 40 Gbit/s, and hybrid evanescent silicon lasers have been realized both in the form of distributed feed-back lasers and micro-disk lasers. For enhancing the impact of silicon photonics in future ultrafast and energy-efficient all-optical signal processing, e.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some......Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...

  16. Silicone-containing composition

    Science.gov (United States)

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  17. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  18. Mid-infrared integrated photonics on silicon: a perspective

    Science.gov (United States)

    Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

    2017-12-01

    The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  19. Homogeneous bilateral block shifts

    Indian Academy of Sciences (India)

    Homogeneous bilateral block shifts. ADAM KORÁNYI. Department of Mathematics, The Graduate Center, City University of New York,. New York, NY 10016, USA. E-mail: Adam.Koranyi@lehman.cuny.edu. MS received 18 January 2013. Abstract. A new 3-parameter family of homogeneous 2-by-2 block shifts is described.

  20. Related Drupal Nodes Block

    NARCIS (Netherlands)

    Van der Vegt, Wim

    2010-01-01

    Related Drupal Nodes Block This module exposes a block that uses Latent Semantic Analysis (Lsa) internally to suggest three nodes that are relevant to the node a user is viewing. This module performs three tasks. 1) It periodically indexes a Drupal site and generates a Lsa Term Document Matrix.

  1. Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

    Science.gov (United States)

    Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

    2017-02-01

    We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

  2. Control rod blocking monitor

    International Nuclear Information System (INIS)

    Suzuki, Shigeru.

    1993-01-01

    The number of times for setting up a control rod blocking monitor of a BWR type power plant is remarkably reduced to mitigate operator's burden. In the control rod blocking monitor, trip levels, as a judging standard upon outputting control rod blocking inhibition signals, are set up stepwise depending on the power level around control rods put to blocking control. The present invention comprises an allowance judging means capable of setting up trip levels for each of power levels corresponding to a plurality of control rods at once if the power levels are within the set up allowable range. With such a constitution, the set up allowable range is determined previously in the allowance judging means. Accordingly, when a gang blocking is conducted to control rods, if power levels around the control rods are increased at once into the set up allowable range, the trip levels for each of the control rods are set up at once. (I.S.)

  3. Whispering gallery germanium-on-silicon photodetector.

    Science.gov (United States)

    Su, Zhan; Hosseini, Ehsan Shah; Timurdogan, Erman; Sun, Jie; Moresco, Michele; Leake, Gerald; Adam, Thomas N; Coolbaugh, Douglas D; Watts, Michael R

    2017-08-01

    We design and demonstrate, to the best of our knowledge, the first whispering gallery germanium-on-silicon photodetector with evanescent coupling from a silicon bus waveguide in a CMOS-compatible process. The small footprint (63.6  μm 2 ), high responsivity (∼1.04  A/W at 1530 nm), low bias voltage (-1  V), low dark current (2.03 nA), and large optoelectric bandwidth (32.9 GHz) of the detector enable simultaneous wavelength filtering and power detection, ideal for handling large network data traffic. In addition, with the resonant nature of the detector, we also optimize the design to enable long-wavelength detection, achieving a separate device with a detection range of up to 1630 nm with a >0.45  A/W responsivity, making it an important building block for optical communication networks.

  4. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  5. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  6. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  7. Predictability of blocking

    International Nuclear Information System (INIS)

    Tosi, E.; Ruti, P.; Tibaldi, S.; D'Andrea, F.

    1994-01-01

    Tibaldi and Molteni (1990, hereafter referred to as TM) had previously investigated operational blocking predictability by the ECMWF model and the possible relationships between model systematic error and blocking in the winter season of the Northern Hemisphere, using seven years of ECMWF operational archives of analyses and day 1 to 10 forecasts. They showed that fewer blocking episodes than in the real atmosphere were generally simulated by the model, and that this deficiency increased with increasing forecast time. As a consequence of this, a major contribution to the systematic error in the winter season was shown to derive from the inability of the model to properly forecast blocking. In this study, the analysis performed in TM for the first seven winter seasons of the ECMWF operational model is extended to the subsequent five winters, during which model development, reflecting both resolution increases and parametrisation modifications, continued unabated. In addition the objective blocking index developed by TM has been applied to the observed data to study the natural low frequency variability of blocking. The ability to simulate blocking of some climate models has also been tested

  8. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  9. Steps towards silicon optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Starovoytov, A

    1999-07-01

    This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material systems currently under investigation. Examples of existing porous silicon devices are given. Chapter 2 reviews the basic physics relevant to the subject of this thesis and in-forms on the present situation in this field of research, including both experimental and theoretical knowledge gained up-to-date. The chapter provides the necessary background for correct interpretation of the results reported in Chapter 3 and for a realistic decision on the direction for future work. Chapter 3 describes my own experimental and computational results within the framework of the subject, obtained at De Montfort University. These include: one-step preparation of laterally structured porous silicon with photoluminescence and microscopy characterisation, Raman spectroscopy of porous silicon, a polarisation study of the photoluminescence from porous silicon, computer simulations of the conductivity of two-component media and of laser focused atomic deposition for nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. (author)

  10. Recrystallization of polycrystalline silicon

    Science.gov (United States)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  11. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  12. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  13. Fluorescent Silicon Clusters and Nanoparticles

    OpenAIRE

    von Haeften, Klaus

    2017-01-01

    The fluorescence of silicon clusters is reviewed. Atomic clusters of silicon have been at the focus of research for several decades because of the relevance of size effects for material properties, the importance of silicon in electronics and the potential applications in bio-medicine. To date numerous examples of nanostructured forms of fluorescent silicon have been reported. This article introduces the principles and underlying concepts relevant for fluorescence of nanostructured silicon su...

  14. Polytetrafluoroethylene-coated pacemaker leads as surgical management of contact allergy to silicone.

    Science.gov (United States)

    Vodiskar, Janez; Schnöring, Heike; Sachweh, Jörg S; Mühler, Eberhard; Vazquez-Jimenez, Jaime F

    2014-01-01

    We have previously reported an 18-year-old girl with a congenital heart defect who developed complete heart block after one of her corrective surgeries and who needed an epicardial pacemaker implantation. She developed contact sensitivity to silicone compounds. The problem was solved by implanting a silicone-free pacemaker system utilizing silicone-free transvenous leads. The patient was readmitted 2 years later due to lead failure. As no silicone-free epicardial leads were available, we decided to use standard silicone epicardial leads and enclose the whole system in Gore-Tex material (W.L. Gore & Associates, Flagstaff, AZ). Based on our experience we would discourage the use of silicone-free transvenous pacing leads for epicardial use. Copyright © 2014 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

  15. 31 CFR 594.301 - Blocked account; blocked property.

    Science.gov (United States)

    2010-07-01

    ... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY GLOBAL TERRORISM SANCTIONS REGULATIONS General Definitions § 594.301 Blocked account; blocked property. The terms blocked account and...

  16. Bundle Branch Block

    Science.gov (United States)

    ... 2015. Bundle branch block Symptoms & causes Diagnosis & treatment Advertisement Mayo Clinic does not endorse companies or products. ... a Job Site Map About This Site Twitter Facebook Google YouTube Pinterest Mayo Clinic is a not- ...

  17. Blocked Urethral Valves

    Science.gov (United States)

    ... the penis. Rarely, small membranes form across the urethra in boys early in pregnancy, and they can block the flow of urine out of the bladder. These membranes are called posterior urethral valves and can have life-threatening consequences ...

  18. Optoelectronics using block copolymers.

    Energy Technology Data Exchange (ETDEWEB)

    Botiz, I.; Darling, S. B.; Center for Nanoscale Materials

    2010-05-01

    Block copolymers, either as semiconductors themselves or as structure directors, are emerging as a promising class of materials for understanding and controlling processes associated with both photovoltaic energy conversion and light emitting devices.

  19. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  20. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  1. The DELPHI silicon tracker

    CERN Document Server

    Pernegger, H

    1997-01-01

    The DELPHI collaboration has upgraded the Silicon Vertex Detector in order to cope with the physics requirements for LEP200. The new detector consists of a barrel section with three layers of microstrip detectors and a forward extension made of hybrid pixel and large pitch strip detectors. The layout of the detector and the techniques used for the different parts of the new silicon detector shall be described.

  2. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  3. Dynamic Silicon Nanophotonics

    Science.gov (United States)

    2013-07-31

    sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

  4. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  5. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  6. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  7. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  8. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  9. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  10. Effects of pore design on mechanical properties of nanoporous silicon

    International Nuclear Information System (INIS)

    Winter, Nicholas; Becton, Matthew; Zhang, Liuyang; Wang, Xianqiao

    2017-01-01

    Nanoporous silicon has been emerging as a powerful building block for next-generation sensors, catalysts, transistors, and tissue scaffolds. The capability to design novel devices with desired mechanical properties is paramount to their reliability and serviceability. In order to bring further resolution to the highly variable mechanical characteristics of nanoporous silicon, here we perform molecular dynamics simulations to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling laws versus the features of interior ligaments. Results show that pore shape and pattern dictate stress accumulation inside the designed structure, leading to the corresponding failure signature, such as stretching-dominated, bending-dominated, or stochastic failure signatures, in nanoporous silicon. The nanostructure of the material is also seen to drive or mute size effects such as “smaller is stronger” and “smaller is ductile”. This investigation provides useful insight into the behavior of nanoporous silicon and how one might leverage its promising applications. - Graphical abstract: Molecular dynamics simulations are performed to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling trends versus the features of interior ligaments.

  11. Right bundle branch block

    DEFF Research Database (Denmark)

    Bussink, Barbara E; Holst, Anders Gaarsdal; Jespersen, Lasse

    2013-01-01

    AimsTo determine the prevalence, predictors of newly acquired, and the prognostic value of right bundle branch block (RBBB) and incomplete RBBB (IRBBB) on a resting 12-lead electrocardiogram in men and women from the general population.Methods and resultsWe followed 18 441 participants included.......5%/2.3% in women, P Right bundle branch block was associated with significantly...... increased all-cause and cardiovascular mortality in both genders with age-adjusted hazard ratios (HR) of 1.31 [95% confidence interval (CI), 1.11-1.54] and 1.87 (95% CI, 1.48-2.36) in the gender pooled analysis with little attenuation after multiple adjustment. Right bundle branch block was associated...

  12. E-Block: A Tangible Programming Tool with Graphical Blocks

    OpenAIRE

    Danli Wang; Yang Zhang; Shengyong Chen

    2013-01-01

    This paper designs a tangible programming tool, E-Block, for children aged 5 to 9 to experience the preliminary understanding of programming by building blocks. With embedded artificial intelligence, the tool defines the programming blocks with the sensors as the input and enables children to write programs to complete the tasks in the computer. The symbol on the programming block's surface is used to help children understanding the function of each block. The sequence information is transfer...

  13. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 µm and. 25 µm, and a sintered silicon ... the sintered silicon carbide was found out to be linked to its previous thermal history. Keywords. Indentation fatigue .... This presence of a grain size effect in the RIF behaviour of the ...

  14. Low-temperature formation of silicon and silicon oxide structures

    NARCIS (Netherlands)

    Ishihara, R.; Trifunovic, M.; Van der Zwan, M.

    2016-01-01

    A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by

  15. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  16. Structural Evolution of Low-Molecular-Weight Poly(ethylene oxide-block-polystyrene Diblock Copolymer Thin Film

    Directory of Open Access Journals (Sweden)

    Hui Wu

    2013-01-01

    Full Text Available The structural evolution of low-molecular-weight poly(ethylene oxide-block-polystyrene (PEO-b-PS diblock copolymer thin film with various initial film thicknesses on silicon substrate under thermal annealing was investigated by atomic force microscopy, optical microscopy, and contact angle measurement. At film thickness below half of the interlamellar spacing of the diblock copolymer (6.2 nm, the entire silicon is covered by a polymer brush with PEO blocks anchored on the Si substrate due to the substrate-induced effect. When the film is thicker than 6.2 nm, a dense polymer brush which is equal to half of an interlamellar layer was formed on the silicon, while the excess material dewet this layer to form droplets. The droplet surface was rich with PS block and the PEO block crystallized inside the bigger droplet to form spherulite.

  17. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  18. The LHCb Silicon Tracker

    CERN Document Server

    Adeva, B; Pérez Trigo, E; Rodríguez Pérez, P; Amhis, Y; Bay, A; Blanc, F; Cowan, G; Dupertuis, F; Fave, V; Haefeli, G; Komarov, I; Luisier, J; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; De Cian, M; Elsasser, Ch; Salzmann, C; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, V; Aquines Gutierrez, O; Britsch, M; Schmelling, M; Voss, H; Iakovenko, V; Okhrimenko, O; Pugatch, V

    2013-01-01

    The LHCb experiment is designed to perform high-precision measurements of CP violation and search for new physics using the enormous flux of beauty and charm hadrons produced at the LHC. The LHCb detector is a single-arm spectrometer with excellent tracking and particle identification capabilities. The Silicon Tracker is part of the tracking system and measures very precisely the particle trajectories coming from the interaction point in the region of high occupancies around the beam axis. The LHCb Silicon Tracker covers a total sensitive area of about 12 M$^2$ using silicon micro-strip detectors with long readout strips. It consists of one four-layer tracking station before the LHCb dipole magnet and three stations after. The detector has performed extremely well since the start of the LHC operation despite the fact that the experiment is collecting data at instantaneous lum...

  19. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  20. Contaminated soil concrete blocks

    NARCIS (Netherlands)

    de Korte, A.C.J.; Brouwers, Jos; Limbachiya, Mukesh C.; Kew, Hsein Y.

    2009-01-01

    According to Dutch law the contaminated soil needs to be remediated or immobilised. The main focus in this article is the design of concrete blocks, containing contaminated soil, that are suitable for large production, financial feasible and meets all technical and environmental requirements. In

  1. Making Block Grants Accountable.

    Science.gov (United States)

    Chelimsky, Eleanor

    Methods of accountability are presented in considering the Reagan administration plan to consolidate 84 federal health, education and social service grants into six block grant areas and to cut overall funding. After matching aspects of public criticism with proposal objectives, a rationale is developed for building elements of accountability into…

  2. Linoleum Block Printing Revisited.

    Science.gov (United States)

    Chetelat, Frank J.

    1980-01-01

    The author discusses practical considerations of teaching linoleum block printing in the elementary grades (tool use, materials, motivation) and outlines a sequence of design concepts in this area for the primary, intermediate and junior high grades. A short list of books and audiovisual aids is appended. (SJL)

  3. Effects of Block Scheduling

    Directory of Open Access Journals (Sweden)

    William R. Veal

    1999-09-01

    Full Text Available This study examined the effects of a tri-schedule on the academic achievement of students in a high school. The tri-schedule consists of traditional, 4x4 block, and hybrid schedules running at the same time in the same high school. Effectiveness of the schedules was determined from the state mandated test of basic skills in reading, language, and mathematics. Students who were in a particular schedule their freshman year were tested at the beginning of their sophomore year. A statistical ANCOVA test was performed using the schedule types as independent variables and cognitive skill index and GPA as covariates. For reading and language, there was no statistically significant difference in test results. There was a statistical difference mathematics-computation. Block mathematics is an ideal format for obtaining more credits in mathematics, but the block format does little for mathematics achievement and conceptual understanding. The results have content specific implications for schools, administrations, and school boards who are considering block scheduling adoption.

  4. Coding with Blockly

    CERN Document Server

    Lovett, Amber

    2017-01-01

    "Blockly is a fun, graphical programming language designed to get kids interested in creating their own computer programs. Through simple text written to foster creativity and problem solving, students will the art of innovation. Large, colorful images show students how to complete activities. Additional tools, including a glossary and an index, help students learn new vocabulary and locate information."-- Provided by publisher.

  5. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  6. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  7. Topology optimised planar photonic crystal building blocks

    DEFF Research Database (Denmark)

    Frandsen, Lars Hagedorn; Hede, K. K.; Borel, Peter Ingo

    A photonic crystal waveguide (PhCW) 1x4 splitter has been constructed from PhCW 60° bends1 and Y-splitters2 that have been designed individually by utilising topology optimisation3. The splitter has been fabricated in a silicon-on-insulator material (Fig. 1) and exhibits a broadband splitting...... for the TE-polarisation with an average excess loss of 1.55±0.54 dB for a 110 nm bandwidth. The 1x4 splitter demonstrates that individual topology-optimised parts can be used as building blocks to realise high-performance nanophotonic circuits. 1L. H. Frandsen et al., Opt. Express 12, 5916-5921 (2004) 2P. I...

  8. [Masquerading bundle branch block].

    Science.gov (United States)

    Kukla, Piotr; Baranchuk, Adrian; Jastrzębski, Marek; Bryniarski, Leszek

    2014-01-01

    We here describe a surface 12-lead electrocardiogram (ECG) of a 72-year-old female with a prior history of breast cancer and chemotherapy-induced cardiomyopathy. An echocardiogram revealed left ventricular dysfunction, ejection fraction of 23%, with mild enlarged left ventricle. The 12-lead ECG showed atrial fibrillation with a mean heart rate of about 100 bpm, QRS duration 160 ms, QT interval 400 ms, right bundle branch block (RBBB) and left anterior fascicular block (LAFB). The combination of RBBB features in the precordial leads and LAFB features in the limb leads is known as ''masquerading bundle branch block''. In most cases of RBBB and LAFB, the QRS axis deviation is located between - 80 to -120 degrees. Rarely, when predominant left ventricular forces are present, the QRS axis deviation is near about -90 degrees, turning the pattern into an atypical form. In a situation of RBBB associated with LAFB, the S wave can be absent or very small in lead I. Such a situation is the result of not only purely LAFB but also with left ventricular hypertrophy and/or focal block due to scar (extensive anterior myocardial infarction) or fibrosis (cardiomyopathy). Sometimes, this specific ECG pattern is mistaken for LBBB. RBBB with LAFB may imitate LBBB either in the limb leads (known as 'standard masquerading' - absence of S wave in lead I), or in the precordial leads (called 'precordial masquerading' - absence of S wave in leads V₅ and V₆). Our ECG showed both these types of masquerading bundle branch block - absence of S wave in lead I and in leads V₅ and V₆.

  9. Multiparametric Porous Silicon Sensors

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2002-04-01

    Full Text Available We investigated the possibility of using several sensing parameters from porous silicon in order to improve gas selectivity. By fabricating porous silicon optical microcavities, three independent quantities can be measured, i.e. the electrical conductance, the photoluminescence intensity, and the wavelength of the optical resonance. We monitored the change of these three parameters as a function of NO2 (0.5-5 ppm, ethanol (300-15000 ppm and relative humidity (0-100%. Preliminary results confirm that the examined species affect the parameters in a different way, both as a relative change and as dynamic.

  10. The CMS Silicon Strip Tracker

    CERN Document Server

    Azzurri, P

    2005-01-01

    With over 200 square meters of sensitive Silicon and almost 10 million readout channels, the Silicon Strip Tracker of the CMS experiment at the LHC will be the largest Silicon strip detector ever built. The design, construction and expected performance of the CMS Tracker is reviewed in the following.

  11. Mechanism of titania deposition into cylindrical poly(styrene-block-4 vinyl pyridine) block copolymer templates.

    Science.gov (United States)

    Lou, Qin; Chinthamanipeta, Pavan S; Shipp, Devon A

    2011-12-20

    A simple and effective way for TiO(2) to be deposited on silicon or indium tin oxide (ITO) substrates has been achieved by using a poly(styrene-block-4-vinyl pyridine) (PS-b-P4VP) block copolymer template. In particular, a mechanism for the formation of TiO(2) within the P4VP phase was developed. Within this model, the TiO(2) deposition occurs by swelling of the protonated P4VP segments followed by transport of Ti precursor, probably protonated Ti(OH)(4) given the low pH conditions used, into the swollen P4VP followed by condensation into TiO(2) during the heating/plasma etch processes. TiO(2) nanostructure morphology is affected by pH and deposition temperatures, because these parameters affect the degree of protonation of P4VP segments and diffusion of the titanium(IV) bis(ammonium lactato)dihydroxide (TALH) precursor into the film. A pH range of 2.1-2.5 for silicon substrates and pH = 2.1 for ITO substrates gave the narrower TiO(2) nanostructures distributions, and deposition at 70 °C gave TiO(2) nanostructures with more regular arrangements and smoother surface than those deposited at room temperature. The use of 1,4-diiodobutane as a P4VP cross-linking compound is demonstrated to be a critical parameter for maintaining good cylindrical surface morphology for both the block copolymer template and the TiO(2) nanostructures. © 2011 American Chemical Society

  12. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    Science.gov (United States)

    1980-11-30

    Continuo on r.vers side it nec..eary and iden0 y by block nmber)I : silicon nitride ~ceramics :! corrosion strength oxidation 20. 4 ACT (Continue on...concentration that optimizes densifi- cation during hot pressing can be altered to improve mechanical properties and oxidation resistance by removing Mg...the intergranular phase to improve the high-temperature- strength, creep resistance, and oxidation resistance. Preoxidation followed by surface

  13. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  14. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  15. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and

  16. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  17. SUPERFICIAL CERVICAL PLEXUS BLOCK

    Directory of Open Access Journals (Sweden)

    Komang Mega Puspadisari

    2014-01-01

    Full Text Available Superficial cervical plexus block is one of the regional anesthesia in  neck were limited to thesuperficial fascia. Anesthesia is used to relieve pain caused either during or after the surgery iscompleted. This technique can be done by landmark or with ultrasound guiding. The midpointof posterior border of the Sternocleidomastoid was identified and the prosedure done on thatplace or on the level of cartilage cricoid.

  18. Change Around the Block?

    Science.gov (United States)

    Berlin, Joey

    2017-04-01

    Proponents of a block grant or per-capita cap trumpet them as vehicles for the federal government to give the states a capped amount of funding for Medicaid that legislatures would effectively distribute how they see fit. Questions abound as to what capped Medicaid funding would look like, and what effect it would have on the current Medicaid-eligible population, covered services, and physician payments.

  19. Morphology evolution of PS-b-PDMS block copolymer and its hierarchical directed self-assembly on block copolymer templates

    DEFF Research Database (Denmark)

    Rasappa, Sozaraj; Schulte, Lars; Borah, Dipu

    2018-01-01

    Cylinder-forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS, 27.2k-b-11.7k, SD39) block copolymer having a total molecular weight of 39 kg mol−1 was exploited to achieve in-plane morphologies of lines, dots and antidots. Brush-free self-assembly of the SD39 on silicon substrates was invest...... substrates provides a simplified method for surface nanopatterning, templated growth of nanomaterials and nanofabrication....... the pattern into the underlying substrate. Directed self-assembly and hierarchical directed self-assembly on block copolymer templates for confinement of dots was successfully demonstrated. The strategy for achieving multiple morphologies using one BCP by mere choice of the annealing solvents on unmodified...

  20. Silicon in beer and brewing.

    Science.gov (United States)

    Casey, Troy R; Bamforth, Charles W

    2010-04-15

    It has been claimed that beer is one of the richest sources of silicon in the diet; however, little is known of the relationship between silicon content and beer style and the manner in which beer is produced. The purpose of this study was to measure silicon in a diversity of beers and ascertain the grist selection and brewing factors that impact the level of silicon obtained in beer. Commercial beers ranged from 6.4 to 56.5 mg L(-1) in silicon. Products derived from a grist of barley tended to contain more silicon than did those from a wheat-based grist, likely because of the high levels of silica in the retained husk layer of barley. Hops contain substantially more silicon than does grain, but quantitatively hops make a much smaller contribution than malt to the production of beer and therefore relatively less silicon in beer derives from them. During brewing the vast majority of the silicon remains with the spent grains; however, aggressive treatment during wort production in the brewhouse leads to increased extraction of silicon into wort and much of this survives into beer. It is confirmed that beer is a very rich source of silicon. (c) 2010 Society of Chemical Industry.

  1. Managing access block.

    Science.gov (United States)

    Cameron, Peter; Scown, Paul; Campbell, Donald

    2002-01-01

    There is pessimism regarding the ability of the Acute Health Sector to manage access block for emergency and elective patients. Melbourne Health suffered an acute bed crisis in 2001 resulting in record ambulance diversions and emergency department (ED) delays. We conducted an observational study to reduce access block for emergency patients whilst maintaining elective throughput at Melbourne Health. This involved a clinician-led taskforce using previously proven principles for organisational change to implement 51 actions to improve patient access over a three-month period. The primary outcome measures were ambulance diversion, emergency patients waiting more than 12 hours for an inpatient bed, elective throughput and theatre cancellations. Despite a reduction in multi-day bed numbers all primary objectives were met, ambulance diversion decreased to minimal levels, 12-hour waits decreased by 40% and elective throughput was maintained. Theatre cancellations were also minimised. We conclude that access block can be improved by clinician-led implementation of proven process improvements over a short time frame. The ability to sustain change over the longer term requires further study.

  2. Toothbrushing alters the surface roughness and gloss of composite resin CAD/CAM blocks.

    Science.gov (United States)

    Kamonkhantikul, Krid; Arksornnukit, Mansuang; Lauvahutanon, Sasipin; Takahashi, Hidekazu

    2016-01-01

    This study investigated the surface roughness and gloss of composite resin CAD/CAM blocks after toothbrushing. Five composite resin blocks (Block HC, Cerasmart, Gradia Block, KZR-CAD Hybrid Resin Block, and Lava Ultimate), one hybrid ceramic (Vita Enamic), one feldspar ceramic (Vitablocs Mark II), one PMMA block (Telio CAD), and one conventional composite resin (Filtek Z350 XT) were evaluated. Surface roughness (Ra) and gloss were determined for each group of materials (n=6) after silicon carbide paper (P4000) grinding, 10k, 20k, and 40k toothbrushing cycles. One-way repeated measures ANOVA indicated significant differences in the Ra and gloss of each material except for the Ra of GRA. After 40k toothbrushing cycles, the Ra of BLO and TEL showed significant increases, while CER, KZR, ULT, and Z350 showed significant decreases. GRA, ENA, and VIT maintained their Ra. All of the materials tested, except CER, demonstrated significant decreases in gloss after 40k toothbrushing cycles.

  3. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  4. New biomaterial as a promising alternative to silicone breast implants.

    Science.gov (United States)

    Teck Lim, Goy; Valente, Stephanie A; Hart-Spicer, Cherie R; Evancho-Chapman, Mary M; Puskas, Judit E; Horne, Walter I; Schmidt, Steven P

    2013-05-01

    One in eight American women develops breast cancer. Of the many patients requiring mastectomy yearly as a consequence, most elect some form of breast reconstruction. Since 2006, only silicone breast implants have been approved by the FDA for the public use. Unfortunately, over one-third of women with these implants experience complications as a result of tissue-material biocompatibility issues, which may include capsular contracture, calcification, hematoma, necrosis and implant rupture. Our group has been working on developing alternatives to silicone. Linear triblock poly(styrene-b-isobutylene-b-styrene) (SIBS) polymers are self-assembling nanostructured thermoplastic rubbers, already in clinical practice as drug eluting stent coatings. New generations with a branched (arborescent or dendritic) polyisobutylene core show promising potential as a biomaterial alternative to silicone rubber. The purpose of this pre-clinical research was to evaluate the material-tissue interactions of a new arborescent block copolymer (TPE1) in a rabbit implantation model compared to a linear SIBS (SIBSTAR 103T) and silicone rubber. This study is the first to compare the molecular weight and molecular weight distribution, tensile properties and histological evaluation of arborescent SIBS-type materials with silicone rubber before implantation and after explantation. Copyright © 2013 Elsevier Ltd. All rights reserved.

  5. Paving block study : final report.

    Science.gov (United States)

    1971-10-01

    The Louisiana Department of Highways has conducted field tests with an experimental revetment consisting of cellular concrete revetment blocks used in conjunction with plastic filter cloth and/or vegetation such as grass or vines. The precast blocks ...

  6. Habitat Blocks and Wildlife Corridors

    Data.gov (United States)

    Vermont Center for Geographic Information — Habitat blocks are areas of contiguous forest and other natural habitats that are unfragmented by roads, development, or agriculture. Vermonts habitat blocks are...

  7. Demographic Data - MDC_Block

    Data.gov (United States)

    NSGIC Local Govt | GIS Inventory — A polygon feature class of Miami-Dade Census 2000 Blocks. Census blocks are areas bounded on all sides by visible and/or invisible features shown on a map prepared...

  8. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  9. Blocking the Hawking radiation

    DEFF Research Database (Denmark)

    Autzen, M.; Kouvaris, C.

    2014-01-01

    grows after its formation (and eventually destroys the star) instead of evaporating. The fate of the black hole is dictated by the two opposite mechanics, i.e., accretion of nuclear matter from the center of the star and Hawking radiation that tends to decrease the mass of the black hole. We study how...... the assumptions for the accretion rate can in fact affect the critical mass beyond which a black hole always grows. We also study to what extent degenerate nuclear matter can impede Hawking radiation due to the fact that emitted particles can be Pauli blocked at the core of the star....

  10. How Artists Overcome Creative Blocks.

    Science.gov (United States)

    Hirst, Barbara

    1992-01-01

    Six practicing artists were interviewed about how they overcome creative blocks. Their responses indicated that feelings of self-doubt, fear, and depression accompany blocks but that relaxing and working on new directions and playing ideas off a supportive person helped to overcome such blocks. (DB)

  11. Block Scheduling in High Schools.

    Science.gov (United States)

    Irmsher, Karen

    1996-01-01

    Block Scheduling has been considered a cure for a lengthy list of educational problems. This report reviews the literature on block schedules and describes some Oregon high schools that have integrated block scheduling. Major disadvantages included resistance to change and requirements that teachers change their teaching strategies. There is…

  12. Abdominal wall blocks in adults

    DEFF Research Database (Denmark)

    Neimann, Jens Dupont Børglum; Gögenür, Ismail; Bendtsen, Thomas F.

    2016-01-01

    Purpose of review Abdominal wall blocks in adults have evolved much during the last decade; that is, particularly with the introduction of ultrasound-guided (USG) blocks. This review highlights recent advances of block techniques within this field and proposes directions for future research.  Rec...

  13. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  14. Structure of Silicon Clusters

    OpenAIRE

    Pan, Jun; Bahel, Atul; Ramakrishna, Mushti V.

    1995-01-01

    We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \\Si{11} is an icosahedron with one missing cap, \\Si{12} is a complete icosahedron, \\Si{13} is a surface capped icosahedron, and \\Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are all surface.

  15. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  16. Thermometry of Silicon Nanoparticles

    Science.gov (United States)

    Mecklenburg, Matthew; Zutter, Brian; Regan, B. C.

    2018-01-01

    Current thermometry techniques lack the spatial resolution required to see the temperature gradients in typical, highly scaled modern transistors. As a step toward addressing this problem, we measure the temperature dependence of the volume plasmon energy in silicon nanoparticles from room temperature to 1250 °C , using a chip-style heating sample holder in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). The plasmon energy changes as expected for an electron gas subject to the thermal expansion of silicon. Reversing this reasoning, we find that measurements of the plasmon energy provide an independent measure of the nanoparticle temperature consistent with that of the heater chip's macroscopic, dual-function heater-and-thermometer to within the 5% accuracy of the thermometer's calibration. Thus, silicon has the potential to provide its own high-spatial-resolution thermometric readout signal via measurements of its volume plasmon energy. Furthermore, nanoparticles can, in general, serve as convenient nanothermometers for in situ electron-microscopy experiments.

  17. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  18. Special Issue: The Silicon Age

    Science.gov (United States)

    Kittler, Martin; Yang, Deren

    2006-03-01

    The present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono- and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro- and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino-German symposium held in Cottbus, Germany, 19-24 September 2005.The cover picture shows four examples of The Silicon Age: the structure of a thin film solar cell on low-cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high-resolution transmission electron microscopy image and diffraction pattern of a single-crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n-type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].

  19. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  20. Program structure-based blocking

    Science.gov (United States)

    Bertolli, Carlo; Eichenberger, Alexandre E.; O'Brien, John K.; Sura, Zehra N.

    2017-09-26

    Embodiments relate to program structure-based blocking. An aspect includes receiving source code corresponding to a computer program by a compiler of a computer system. Another aspect includes determining a prefetching section in the source code by a marking module of the compiler. Yet another aspect includes performing, by a blocking module of the compiler, blocking of instructions located in the prefetching section into instruction blocks, such that the instruction blocks of the prefetching section only contain instructions that are located in the prefetching section.

  1. Characterization of electrical and optical properties of silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Guobin

    2009-12-04

    In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

  2. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  3. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  4. Block copolymer investigations

    Science.gov (United States)

    Yufa, Nataliya A.

    The research presented in this thesis deals with various aspects of block copolymers on the nanoscale: their behavior at a range of temperatures, their use as scaffolds, or for creation of chemically striped surfaces, as well as the behavior of metals on block copolymers under the influence of UV light, and the healing behavior of copolymers. Invented around the time of World War II, copolymers have been used for decades due to their macroscopic properties, such as their ability to be molded without vulcanization, and the fact that, unlike rubber, they can be recycled. In recent years, block copolymers (BCPs) have been used for lithography, as scaffolds for nano-objects, to create a magnetic hard drive, as well as in photonic and other applications. In this work we used primarily atomic force microscopy (AFM) and transmission electron microscopy (TEM), described in Chapter II, to conduct our studies. In Chapter III we demonstrate a new and general method for positioning nanoparticles within nanoscale grooves. This technique is suitable for nanodots, nanocrystals, as well as DNA. We use AFM and TEM to demonstrate selective decoration. In Chapters IV and V we use AFM and TEM to study the structure of polymer surfaces coated with metals and self-assembled monolayers. We describe how the surfaces were created, exhibit their structure on the nanoscale, and prove that their macroscopic wetting properties have been altered compared to the original polymer structures. Finally, Chapters VI and VII report out in-situ AFM studies of BCP at high temperatures, made possible only recently with the invention of air-tight high-temperature AFM imaging cells. We locate the transition between disordered films and cylinders during initial ordering. Fluctuations of existing domains leading to domain coarsening are also described, and are shown to be consistent with reptation and curvature minimization. Chapter VII deals with the healing of PS-b-PMMA following AFM-tip lithography or

  5. Studies on microphase-separated structures of block copolymers by neutron reflectivity measurement

    International Nuclear Information System (INIS)

    Torikai, Naoya; Noda, Ichiro; Matsushita, Yushu; Karim, A.; Satija, S.K.; Han, C.C.; Ebisawa, Toru.

    1996-01-01

    Segmental distributions of block copolymer chains in lamellar microphase-separated structure and those of homopolymers in block copolymer/homopolymer blends also with lamellar structures were studied by neutron reflectivity measurements. It was revealed that polystyrene and poly(2-vinylpyridine) lamellae were alternately stacked within the thin films of pure block copolymers spin-coated on silicon wafers, and they were preferentially oriented along the direction parallel to film surface. Polystyrene lamella appeared at air surfaces of the films, while poly(2-vinylpyridine) lamella did on silicon surfaces. Segment distribution at lamellar interface was well described by an error function, and the width of the lamellar interface, defined by a full-width half-maximum value of interfacial profile, was estimated to be about 4.5 nm. Segments of block chains adjacent to the chemical junction points connecting different block chains were strongly localized near the lamellar interfaces, while those on the free ends of block chains were distributed all over the lamellar microdomains with their distribution maxima at the centers of lamellae. On the other hand, it was clarified that homopolymers dissolved in the corresponding lamellar microdomains of block copolymers were also distributed throughout the microdomains with their concentration maxima at the centers of the lamellae. (author)

  6. Silicone Gel-Filled Breast Implants

    Science.gov (United States)

    ... and Prosthetics Breast Implants Silicone Gel-Filled Breast Implants Share Tweet Linkedin Pin it More sharing options ... it Email Print Description: Silicone gel-filled breast implants have a silicone outer shell that is filled ...

  7. Thermal conductivity reduction in silicon fishbone nanowires.

    Science.gov (United States)

    Maire, Jeremie; Anufriev, Roman; Hori, Takuma; Shiomi, Junichiro; Volz, Sebastian; Nomura, Masahiro

    2018-03-13

    Semiconductor nanowires are potential building blocks for future thermoelectrics because of their low thermal conductivity. Recent theoretical works suggest that thermal conductivity of nanowires can be further reduced by additional constrictions, pillars or wings. Here, we experimentally study heat conduction in silicon nanowires with periodic wings, called fishbone nanowires. We find that like in pristine nanowires, the nanowire cross-section controls thermal conductivity of fishbone nanowires. However, the periodic wings further reduce the thermal conductivity. Whereas an increase in the wing width only slightly affects the thermal conductivity, an increase in the wing depth clearly reduces thermal conductivity, and this reduction is stronger in the structures with narrower nanowires. Our experimental data is supported by the Callaway-Holland model, finite element modelling and phonon transport simulations.

  8. Celiac ganglia block

    Energy Technology Data Exchange (ETDEWEB)

    Akinci, Devrim [Department of Radiology, Hacettepe University School of Medicine, Sihhiye, 06100 Ankara (Turkey); Akhan, Okan [Department of Radiology, Hacettepe University School of Medicine, Sihhiye, 06100 Ankara (Turkey)]. E-mail: oakhan@hacettepe.edu.tr

    2005-09-01

    Pain occurs frequently in patients with advanced cancers. Tumors originating from upper abdominal viscera such as pancreas, stomach, duodenum, proximal small bowel, liver and biliary tract and from compressing enlarged lymph nodes can cause severe abdominal pain, which do not respond satisfactorily to medical treatment or radiotherapy. Percutaneous celiac ganglia block (CGB) can be performed with high success and low complication rates under imaging guidance to obtain pain relief in patients with upper abdominal malignancies. A significant relationship between pain relief and degree of tumoral celiac ganglia invasion according to CT features was described in the literature. Performing the procedure in the early grades of celiac ganglia invasion on CT can increase the effectiveness of the CGB, which is contrary to World Health Organization criteria stating that CGB must be performed in patients with advanced stage cancer. CGB may also be effectively performed in patients with chronic pancreatitis for pain palliation.

  9. Atomic Basic Blocks

    Science.gov (United States)

    Scheler, Fabian; Mitzlaff, Martin; Schröder-Preikschat, Wolfgang

    Die Entscheidung, einen zeit- bzw. ereignisgesteuerten Ansatz für ein Echtzeitsystem zu verwenden, ist schwierig und sehr weitreichend. Weitreichend vor allem deshalb, weil diese beiden Ansätze mit äußerst unterschiedlichen Kontrollflussabstraktionen verknüpft sind, die eine spätere Migration zum anderen Paradigma sehr schwer oder gar unmöglich machen. Wir schlagen daher die Verwendung einer Zwischendarstellung vor, die unabhängig von der jeweils verwendeten Kontrollflussabstraktion ist. Für diesen Zweck verwenden wir auf Basisblöcken basierende Atomic Basic Blocks (ABB) und bauen darauf ein Werkzeug, den Real-Time Systems Compiler (RTSC) auf, der die Migration zwischen zeit- und ereignisgesteuerten Systemen unterstützt.

  10. Celiac ganglia block

    International Nuclear Information System (INIS)

    Akinci, Devrim; Akhan, Okan

    2005-01-01

    Pain occurs frequently in patients with advanced cancers. Tumors originating from upper abdominal viscera such as pancreas, stomach, duodenum, proximal small bowel, liver and biliary tract and from compressing enlarged lymph nodes can cause severe abdominal pain, which do not respond satisfactorily to medical treatment or radiotherapy. Percutaneous celiac ganglia block (CGB) can be performed with high success and low complication rates under imaging guidance to obtain pain relief in patients with upper abdominal malignancies. A significant relationship between pain relief and degree of tumoral celiac ganglia invasion according to CT features was described in the literature. Performing the procedure in the early grades of celiac ganglia invasion on CT can increase the effectiveness of the CGB, which is contrary to World Health Organization criteria stating that CGB must be performed in patients with advanced stage cancer. CGB may also be effectively performed in patients with chronic pancreatitis for pain palliation

  11. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  12. Functional materials derived from block copolymer self-assembly

    DEFF Research Database (Denmark)

    Li, Tao

    surface energy, including polymers, silicon and graphene, thus bypassing the laborious and delicate substrate chemical pre-modification. To push the boundary even further for minimal lithography steps, a scalable ultra-fast block copolymer lithography procedure is developed. Using selective solvent spin....... We believe this project opens up for a number of strategies aiming at the creation of high-performance functional materials on the length scale of sub-20 nanometers that cannot be manufactured in an easy fashion by conventional top-down lithography methods....

  13. Low cost silicon solar array project silicon materials task

    Science.gov (United States)

    1977-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

  14. Towards Ordered Silicon Nanostructures through Self-Assembling Mechanisms and Processes

    Directory of Open Access Journals (Sweden)

    R. A. Puglisi

    2015-01-01

    Full Text Available The design and development of innovative architectures for memory storage and energy conversion devices are at the forefront of current research efforts driving us towards a sustainable future. However, issues related to the cost, efficiency, and reliability of current technologies are still severely limiting their overtake of the standard designs. The use of ordered nanostructured silicon is expected to overcome these limitations and push the advancement of the alternative technologies. Specifically, self-assembling of block copolymers has been recognized as a promising and cost-effective approach to organize silicon nanostructures. This work reviews some of the most important findings on block copolymer self-assembling and complements those with the results of new experimental studies. First of all, a quantitative analysis is presented on the ordering and fluctuations expected in the synthesis of silicon nanostructures by using standard synthesis methods like chemical vapour deposition. Then the effects of the several parameters guiding the ordering mechanisms in the block copolymer systems, such as film thickness, molecular weight, annealing conditions, solvent, and substrate topography are discussed. Finally, as a proof of concept, an in-house developed example application to solar cells is presented, based on silicon nanostructures resulting from self-assembling of block copolymers.

  15. Silicone fluids for aquarium test. Quarterly report, January--March 1971

    Energy Technology Data Exchange (ETDEWEB)

    Lichte, H.W.

    1997-09-01

    A group of silicone fluids is presented from which a specific fluid (7 ctsk dimethylpolysiloxane tri-methyl end-blocked) was chosen for use in the aquarium test. Data is extracted from current publications to indicate trends in physical properties due to changing conditions.

  16. The CMS silicon strip tracker and its electronic readout

    International Nuclear Information System (INIS)

    Friedl, M.

    2001-05-01

    The Large Hadron Collider (LHC) at CERN (Geneva, CH) will be the world's biggest accelerator machine when operation starts in 2006. One of its four detector experiments is the Compact Muon Solenoid (CMS), consisting of a large-scale silicon tracker and electromagnetic and hadron calorimeters, all embedded in a solenoidal magnetic field of 4 T, and a muon system surrounding the magnet coil. The Silicon Strip Tracker has a sensitive area of 206m 2 with 10 million analog channels which are read out at the collider frequency of 40 MHz. The building blocks of the CMS Tracker are the silicon sensors, APV amplifier ASICs, supporting front-end ASICs, analog and digital optical links as well as data processors and control units in the back-end. Radiation tolerance, readout speed and the huge data volume are challenging requirements. The charge collection in silicon detectors was modeled, which is discussed as well as the concepts of readout amplifiers with respect to the LHC requirements, including the deconvolution method of fast pulse shaping, electronic noise constraints and radiation effects. Moreover, extensive measurements on prototype components of the CMS Tracker and different versions of the APV chip in particular were performed. There was a significant contribution to the construction of several detector modules, characterized them in particle beam tests and quantified radiation induced effects on the APV chip and on silicon detectors. In addition, a prototype of the analog optical link and the analog performance of the back-end digitization unit were evaluated. The results are very encouraging, demonstrating the feasibility of the CMS Silicon Strip Tracker system and motivating progress towards the construction phase. (author)

  17. Silicon carbide sewing thread

    Science.gov (United States)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  18. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  19. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  20. Readout of silicon strip detectors

    CERN Document Server

    Dabrowski, W

    2003-01-01

    Various architectural and technological options of readout electronics for silicon strip detectors in vertex and tracking applications are discussed briefly. The ABCD3T ASIC for the readout of silicon strip detectors in the ATLAS semiconductor tracker is presented. The architecture of the chip, some design issues and radiation effects are discussed.

  1. Dimensional reduction for conformal blocks

    Science.gov (United States)

    Hogervorst, Matthijs

    2016-09-01

    We consider the dimensional reduction of a CFT, breaking multiplets of the d-dimensional conformal group SO( d + 1 , 1) up into multiplets of SO( d, 1). This leads to an expansion of d-dimensional conformal blocks in terms of blocks in d - 1 dimensions. In particular, we obtain a formula for 3 d conformal blocks as an infinite sum over 2 F 1 hypergeometric functions with closed-form coefficients.

  2. Learning Potentials in Number Blocks

    DEFF Research Database (Denmark)

    Majgaard, Gunver; Misfeldt, Morten; Nielsen, Jacob

    2012-01-01

    . The tool is called Number Blocks and it combines physical interaction, learning, and immediate feedback. Number Blocks supports the children's understanding of place value in the sense that it allows them to experiment with creating large numbers. We found the blocks contributed to the learning process...... in several ways. The blocks combined mathematics and play, and they included and supported children at different academic levels. The auditory representation, especially the enhanced rhythmic effects due to using speech synthesis, and the rhythm helped the children to pronounce large numbers. This creates...

  3. Common blocks for ASQS(12

    Directory of Open Access Journals (Sweden)

    Lorenzo Milazzo

    1997-05-01

    Full Text Available An ASQS(v is a particular Steiner system featuring a set of v vertices and two separate families of blocks, B and G, whose elements have a respective cardinality of 4 and 6. It has the property that any three vertices of X belong either to a B-block or to a G-block. The parameter cb is the number of common blocks in two separate ASQSs, both defined on the same set of vertices X . In this paper it is shown that cb ≤ 29 for any pair of ASQSs(12.

  4. Radiation damage in silicon detectors

    CERN Document Server

    Bruzzi, Mara

    2000-01-01

    This work presents an overview of the most important mechanisms of radiation damage in silicon detectors to be used for high energy experiments in LHC. The changes in the shallow concentration have been studied by Thermally Stimulated Currents (TSC) after proton and neutron irradiation with fluences up to 1015 cm-2 to investigate the role of thermal donors and the donor-removal effect in standard and oxygen enriched silicon with different resistivities. Deep defects in irradiated silicon have been analysed by Deep Level Transient Spectroscopy (DLTS) and Photo Induced Current Transient Spectroscopy (P1CTS) in the same materials. The radiation-induced microscopic disorder has been related with the carrier transport properties of irradiated silicon measured by Hall effect, by capacitance and current vs. voltage characteristics and with charge collection efficiency. The dependence of the irradiated silicon detectors performances on crystal orientation, on incident particle type and on the starting concentration o...

  5. Silicone materials for LED packaging

    Science.gov (United States)

    Bahadur, Maneesh; Norris, Ann W.; Zarisfi, Afrooz; Alger, James S.; Windiate, Christopher C.

    2006-08-01

    Silicone based materials have attracted considerable attention from light emitting diode (LED) manufacturers for use as encapsulants and lenses for many high brightness LED (HB LED) devices. Currently silicones function in two key roles in HB LED devices, (1) as protective lenses and (2) stress relieving encapsulants for wire bond protection. The key attributes of silicones that make them attractive as light path materials for high brightness HB LEDs include their high transparency in the UV-visible region, controlled refractive index (RI), stable thermo-mechanical properties, and tuneable modulus from soft gels to hard resins. This paper will describe recent developments in moldable silicone hard resin materials. Progress on cavity moldable and liquid injection moldable (LIM) silicone compositions for discreet components is described. Also, an example of liquid injection overmolding is presented.

  6. 31 CFR 545.301 - Blocked account; blocked property.

    Science.gov (United States)

    2010-07-01

    ... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY TALIBAN (AFGHANISTAN) SANCTIONS... name of the Taliban or persons whose property or interests in property are blocked pursuant to § 545.201, or in which the Taliban or persons whose property or interests in property are blocked pursuant...

  7. The Silicon Lattice Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J

    2003-11-24

    Previously, the generalized luminosity L was defined and calculated for all incident channels based on an NLC e{sup +}e{sup -} design. Alternatives were then considered to improve the differing beam-beam effects in the e{sup -}e{sup -}, e{gamma} and {gamma}{gamma} channels. One example was tensor beams composed of bunchlets n{sub ijk} implemented with a laser-driven, silicon accelerator based on micromachining techniques. Problems were considered and expressions given for radiative broadening due to bunchlet manipulation near the final focus to optimize luminosity via charge enhancement, neutralization or bunch shaping. Because the results were promising, we explore fully integrated structures that include sources, optics (for both light and particles) and acceleration in a common format--an accelerator-on-chip. Acceptable materials (and wavelengths) must allow velocity synchronism between many laser and electron pulses with optimal efficiency in high radiation environments. There are obvious control and cost advantages that accrue from using silicon structures if radiation effects can be made acceptable and the structures fabricated. Tests related to deep etching, fabrication and radiation effects on candidate amorphous and crystalline materials indicate Si(1.2 < {lambda}{sub L} < 10 {micro}m) and fused c-SiO{sub 2}(0.3 < {lambda}{sub L} < 4 {micro}m) to be ideal.

  8. Micromachined silicon seismic transducers

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Sniegowski, J.J.; Armour, D.L.; Fleming, R.P.

    1995-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of CTBT monitoring by providing inexpensive, easily depolyable sensor arrays. Although our goal is to fabricate seismic sensors that provide the same performance level as the current state-of-the-art ``macro`` systems, if necessary one could deploy a larger number of these small sensors at closer proximity to the location being monitored in order to compensate for lower performance. We have chosen a modified pendulum design and are manufacturing prototypes in two different silicon micromachining fabrication technologies. The first set of prototypes, fabricated in our advanced surface- micromachining technology, are currently being packaged for testing in servo circuits -- we anticipate that these devices, which have masses in the 1--10 {mu}g range, will resolve sub-mG signals. Concurrently, we are developing a novel ``mold`` micromachining technology that promises to make proof masses in the 1--10 mg range possible -- our calculations indicate that devices made in this new technology will resolve down to at least sub-{mu}G signals, and may even approach to 10{sup {minus}10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  9. SILICON AND BONE HEALTH

    Science.gov (United States)

    JUGDAOHSINGH, R.

    2009-01-01

    Low bone mass (osteoporosis) is a silent epidemic of the 21st century, which presently in the UK results in over 200,000 fractures annually at a cost of over one billion pounds. Figures are set to increase worldwide. Understanding the factors which affect bone metabolism is thus of primary importance in order to establish preventative measures or treatments for this condition. Nutrition is an important determinant of bone health, but the effects of the individual nutrients and minerals, other than calcium, is little understood. Accumulating evidence over the last 30 years strongly suggest that dietary silicon is beneficial to bone and connective tissue health and we recently reported strong positive associations between dietary Si intake and bone mineral density in US and UK cohorts. The exact biological role(s) of silicon in bone health is still not clear, although a number of possible mechanisms have been suggested, including the synthesis of collagen and/or its stabilization, and matrix mineralization. This review gives an overview of this naturally occurring dietary element, its metabolism and the evidence of its potential role in bone health. PMID:17435952

  10. Haematic silicon in drowning.

    Science.gov (United States)

    Pierucci, Giovanni; Merlano, Federica; Chen, Yao; Sturini, Michela; Maraschi, Federica; Profumo, Antonella

    2016-04-01

    The aim of this paper was to evaluate silicon (Si) concentration in human whole ventricular blood as a further potential chemical marker in the diagnosis of drowning. We employed an acidic digestion for the extraction of soluble Si, and an alkaline digestion for the determination of total Si, including particulate matter, both arising from drowning medium. 29 suspected drowning situations, 24 in fresh water (Fw) and 5 in seawater (Sw), were examined. The difference in Si concentration between the left and right ventricular blood (Si ΔL-R) was measured and alkaline Si ΔL-R seems, indeed, a potentially significant complementary tool in the diagnosis of Fw drowning, because insoluble silicon fraction does not undergo hemo-dilution or hemo-concentration, and the ΔL-R is not affected by exogenous factors. In spite of the limited number of cases investigated, a good correlation was observed between the analytical results and the macro-microscopic autoptic findings. Copyright © 2016 Elsevier Ltd and Faculty of Forensic and Legal Medicine. All rights reserved.

  11. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  12. Chalcogen donnors in silicon

    International Nuclear Information System (INIS)

    Scolfaro, L.M.R.

    1985-01-01

    The electronic stucture of chalcogen impurities in silicon which give rise to deep levels in the forbidden band gap of that semiconductor is studied. The molecular cluster model within the formalism of the multiple scattering method in the Xα local density approximation was used . The surface orbitals were treated by using the Watson sphere model. Studies were carried out for the isolated substitutional sulfur and selenium impurities (Si:S and Si:Se). A pioneer investigation was performed for the nearest-neighbor impurity pairs of sulfur and selenium (Si:S 2 and Si:Se 2 ). All the systems were also analysed in the positive charge states (Si:S + , Si:Se + and Si:Se 2 + ) and for the isolated impurities the calculations were carried out to the spin polarized limit. The obtained results were used to interpret recent photoconductivity, photocapitance, EPR and DLTS data on these centers. It was observed that the adopted model is able to provide a satisfactory description of the electronic structure of the chalcogen impurity centers in silicon. (autor) [pt

  13. The CMS silicon strip tracker and its electronic readout

    CERN Document Server

    Friedl, M

    2001-01-01

    The Large Hadron Collider (LHC) at CERN (Geneva, CH) will be the world's biggest accelerator machine when operation starts in 2006. One of its four detector experiments is the Compact Muon Solenoid (CMS), consisting of a large-scale silicon tracker and electromagnetic and hadron calorimeters, all embedded in a solenoidal magnetic field of 4T, and a muon system surrounding the magnet coil. The Silicon Strip Tracker has a sensitive area of 206m sup 2 with 10 million analog channels which are read out at the collider frequency of 40 MHz. The building blocks of the CMS Tracker are the silicon sensors, APV amplifier ASICs, supporting front-end ASICs, analog and digital optical links as well as data processors and control units in the back-end. Radiation tolerance, readout speed and the huge data volume are challenging requirements. I have modeled the charge collection in silicon detectors which is discussed as well as the concepts of readout amplifiers with respect to the LHC requirements, including the deconvolut...

  14. Selective emitter using porous silicon for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Inyong; Kim, Kyunghae; Kim, Youngkuk; Han, Kyumin; Kyeong, Doheon; Kwon, Taeyoung; Vinh Ai, Dao; Lee, Jeongchul; Yi, Junsin [School of Information and Communication Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea); Thamilselvan, M. [School of Information and Communication Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea); Government College of Technology, Coimbatore, Tamilnadu (India); Ju, Minkyu; Lee, Kyungsoo [KPE Ins. Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea)

    2009-06-15

    This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured emitter sheet resistances at the high- and low-level-doped regions were 30-35 and 97-474 {omega}/{open_square} respectively. A simple process for low- and high-level doping has been achieved by forming porous and porous-free silicon surface, in this study, which could be applied for solar cells selective emitter doping. (author)

  15. Effect of Cyclic Loading on Surface Instability of Silicone Rubber under Compression

    Directory of Open Access Journals (Sweden)

    Zhonglin Li

    2017-04-01

    Full Text Available This work combines experiments and finite element simulations to study the effect of pre-imposed cyclic loading on surface instability of silicon rubber under compression. We first fabricate cuboid blocks of silicon rubber and pinch them cyclicly a few times. Then, an in-house apparatus is set to apply uniaxial compression on the silicon rubber under exact plane strain conditions. Surprisingly, we find multiple creases on the surface of silicone rubber, significantly different from what have been observed on the samples without the cyclic pinching. To reveal the underlying physics for these experimentally observed multiple creases, we perform detailed nanoindentation experiments to measure the material properties at different locations of the silicon rubber. The modulus is found to be nonuniform and varies along the thickness direction after the cyclic pinching. According to these experimental results, three-layer and multilayer finite element models are built with different materials properties informed by experiments. The three-layer finite element model can excellently explain the nucleation and pattern of multiple surface creases on the surface of compressed silicone rubber, in good agreement with experiments. Counterintuitively, the multilayer model with gradient modulus cannot be used to explain the multiple creases observed in our experiments. According to these simulations, the experimentally observed multiple creases should be attributed to a thin and stiff layer formed on the surface of silicon rubber after the pre-imposed cyclic loading.

  16. Classical Virasoro irregular conformal block

    Science.gov (United States)

    Rim, Chaiho; Zhang, Hong

    2015-07-01

    Virasoro irregular conformal block with arbitrary rank is obtained for the classical limit or equivalently Nekrasov-Shatashvili limit using the beta-deformed irregular matrix model (Penner-type matrix model for the irregular conformal block). The same result is derived using the generalized Mathieu equation which is equivalent to the loop equation of the irregular matrix model.

  17. Classical Virasoro irregular conformal block

    Energy Technology Data Exchange (ETDEWEB)

    Rim, Chaiho; Zhang, Hong [Department of Physics and Center for Quantum Spacetime (CQUeST), Sogang University,Seoul 121-742 (Korea, Republic of)

    2015-07-30

    Virasoro irregular conformal block with arbitrary rank is obtained for the classical limit or equivalently Nekrasov-Shatashvili limit using the beta-deformed irregular matrix model (Penner-type matrix model for the irregular conformal block). The same result is derived using the generalized Mathieu equation which is equivalent to the loop equation of the irregular matrix model.

  18. Four-block beam collimator

    CERN Document Server

    CERN PhotoLab

    1977-01-01

    The photo shows a four-block collimator installed on a control table for positioning the alignment reference marks. Designed for use with the secondary beams, the collimators operated in vacuum conditions. The blocks were made of steel and had a standard length of 1 m. The maximum aperture had a square coss-section of 144 cm2. (See Annual Report 1976.)

  19. OPAL Various Lead Glass Blocks

    CERN Document Server

    These lead glass blocks were part of a CERN detector called OPAL (one of the four experiments at the LEP particle detector). OPAL uses some 12 000 blocks of glass like this to measure particle energies in the electromagnetic calorimeter. This detector measured the energy deposited when electrons and photons were slowed down and stopped.

  20. Writing Blocks and Tacit Knowledge.

    Science.gov (United States)

    Boice, Robert

    1993-01-01

    A review of the literature on writing block looks at two kinds: inability to write in a timely, fluent fashion, and reluctance by academicians to assist others in writing. Obstacles to fluent writing are outlined, four historical trends in treating blocks are discussed, and implications are examined. (MSE)

  1. Block storage subsystem performance analysis

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    You feel that your service is slow because of the storage subsystem? But there are too many abstraction layers between your software and the raw block device for you to debug all this pile... Let's dive on the platters and check out how the block storage sees your I/Os! We can even figure out what those patterns are meaning.

  2. Antireflective "moth-eye" structures on tunable optical silicone membranes.

    Science.gov (United States)

    Brunner, Robert; Keil, Bettina; Morhard, Christoph; Lehr, Dennis; Draheim, Jan; Wallrabe, Ulrike; Spatz, Joachim

    2012-07-01

    Flexible silicone membranes are key components for tunable optical lenses. The elastic operation of the membranes impedes the use of classical layer systems for an antireflective (AR) effect. To overcome this limitation, we equipped optical elastomer membranes with "moth-eye" structures directly in the flexible silicone substrate. The manufacturing of the AR structures in the flexible membrane includes a mastering process based on block copolymer micelle nanolithography followed by a replication method. We investigate the performance of the resulting AR structures under strain of up to 20% membrane expansion. A significant transmittance enhancement of up to 2.5% is achieved over the entire visible spectrum, which means that more than half of the surface reflection losses are compensated by the AR structures.

  3. Relationship between silicon concentration and creatinine clearance

    International Nuclear Information System (INIS)

    Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

    1998-01-01

    Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

  4. Extracting Silicon From Sodium-Process Products

    Science.gov (United States)

    Kapur, V.; Sanjurjo, A.; Sancier, K. M.; Nanis, L.

    1982-01-01

    New acid leaching process purifies silicon produced in reaction between silicon fluoride and sodium. Concentration of sodium fluoride and other impurities and byproducts remaining in silicon are within acceptable ranges for semi-conductor devices. Leaching process makes sodium reduction process more attractive for making large quantities of silicon for solar cells.

  5. Apparatus for making molten silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  6. Process for forming retrograde profiles in silicon

    Science.gov (United States)

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  7. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  8. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate...... how Si influences cell wall composition in cereal straw and, consequently, the enzymatic saccharification efficiency. Considering the importance of Nitrogen (N) fertilization in cereal production, an additional objective was to elucidate the effect of N supply on Si concentration and cell wall...... composition. The Si concentration in wheat straw differed significantly among genotypes and growth locations. Wheat straw with high Si concentration released less xylose during enzymatic saccharification suggesting inhibition by Si deposited in hemicelluloses. N supply had a distinct effect on Si...

  9. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  10. Silicon force sensor

    Energy Technology Data Exchange (ETDEWEB)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  11. Fluidized bed silicon deposition from silane

    Science.gov (United States)

    Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

    1984-01-01

    A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

  12. Crucible Grows Wide Silicon Ribbon

    Science.gov (United States)

    Seidensticker, R.

    1982-01-01

    Inexpensive manufacture of solar cells may require quality silicon ribbon crystals. One way to produce them is by growing wide dendritic webs, which can be very long and have high structural perfection. Dendrites grow from supercooled melt, so width of ribbon depends on how wide a region of supercooled molten silicon can be maintained in crucible. Elongated geometry of suscepter/crucible/lid assembly allows molten silicon to supercool over a wider region -- a necessary condition for the growth of wide dendritic crystal ribbon.

  13. Criminal Justice Systems. Block I: Law Enforcement. Block II: The Courts. Block III: Corrections. Block IV: Community Relations. Block V: Proficiency Skills. Block VI: Criminalistics. Student Guide.

    Science.gov (United States)

    Florida State Dept. of Education, Tallahassee. Div. of Vocational, Adult, and Community Education.

    This student guide together with an instructor guide comprise a set of curriculum materials on the criminal justice system. The student guide contains self-contained instructional material that students can study at their own pace most of the time. Six major subject areas or blocks, which are further broken down into several units, with some units…

  14. Criminal Justice Systems. Block I: Law Enforcement. Block II: The Courts. Block III: Corrections. Block IV: Community Relations. Block V: Proficiency Skills. Block VI: Criminalistics. Instructor Guide.

    Science.gov (United States)

    Florida State Dept. of Education, Tallahassee. Div. of Vocational, Adult, and Community Education.

    This instructor guide together with a student guide comprise a set of curriculum materials on the criminal justice system. The instructor guide is a resource for planning and managing individualized, competency-based instruction in six major subject areas or blocks, which are further broken down into several units with some units having several…

  15. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  16. Block by Block: Civic Action in the Battle of Baghdad

    Science.gov (United States)

    2007-11-01

    bedding, and latrine facilities. Additionally, provide milk , baby formula, diapers, 7 Bogart: Block by Block and infant/family care items such as...viable agricultural businesses. The cattle are a cross breed of a “regular” Iraqi cow and a water buffalo. Chicken farms are mostly egg farms, and...a problem. Contractors did not want to work for fear of being shot or kid - napped. For example, four contractors were shot over the duration of

  17. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  18. Harmony of spinning conformal blocks

    Energy Technology Data Exchange (ETDEWEB)

    Schomerus, Volker [DESY Hamburg, Theory Group,Notkestraße 85, 22607 Hamburg (Germany); Sobko, Evgeny [Nordita and Stockholm University,Roslagstullsbacken 23, SE-106 91 Stockholm (Sweden); Isachenkov, Mikhail [Department of Particle Physics and Astrophysics, Weizmann Institute of Science,Rehovot 7610001 (Israel)

    2017-03-15

    Conformal blocks for correlation functions of tensor operators play an increasingly important role for the conformal bootstrap programme. We develop a universal approach to such spinning blocks through the harmonic analysis of certain bundles over a coset of the conformal group. The resulting Casimir equations are given by a matrix version of the Calogero-Sutherland Hamiltonian that describes the scattering of interacting spinning particles in a 1-dimensional external potential. The approach is illustrated in several examples including fermionic seed blocks in 3D CFT where they take a very simple form.

  19. Harmony of spinning conformal blocks

    Energy Technology Data Exchange (ETDEWEB)

    Schomerus, Volker [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany). Theory Group; Sobko, Evgeny [Stockholm Univ. (Sweden); Nordita, Stockholm (Sweden); Isachenkov, Mikhail [Weizmann Institute of Science, Rehovoth (Israel). Dept. of Particle Physics and Astrophysics

    2016-12-07

    Conformal blocks for correlation functions of tensor operators play an increasingly important role for the conformal bootstrap programme. We develop a universal approach to such spinning blocks through the harmonic analysis of certain bundles over a coset of the conformal group. The resulting Casimir equations are given by a matrix version of the Calogero-Sutherland Hamiltonian that describes the scattering of interacting spinning particles in a 1-dimensional external potential. The approach is illustrated in several examples including fermionic seed blocks in 3D CFT where they take a very simple form.

  20. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  1. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern...

  2. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  3. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  4. Characterization of Czochralski Silicon Detectors

    CERN Document Server

    Luukka, Panja-Riina

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alternative for future highenergy physics experiments. In the large hadron collider (LHC), the RH of the detectorsis a critical issue due to the high luminosity (1034 cm-2s-1) corresponding to the expectedtotal fluencies of fast hadrons above 1015 cm-2. This RH improvement is important sinceradiation damage in the detector bulk material reduces the detector performance andbecause some of the devices produced from standard detector-grade silicon, e.g. FZsilicon with negligible oxygen concentration, might not survive the plann...

  5. Neuron-inspired flexible memristive device on silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-06-18

    Comprehensive understanding of the world\\'s most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At the same time, brain cortex is folded allowing trillions of neurons to be integrated in a compact volume. Therefore, we report flexible aluminium oxide based memristive devices fabricated and then derived from widely used bulk mono-crystalline silicon (100). We use complementary metal oxide semiconductor based processes to layout the foundation for ultra large scale integration (ULSI) of such memory devices to advance the task of comprehending a physical model of human brain.

  6. Combined Silicon and Gallium Arsenide Solar Cell UV Testing

    Science.gov (United States)

    Willowby, Douglas

    2005-01-01

    The near and long-term effect of UV on silicon solar cells is relatively understood. In an effort to learn more about the effects of UV radiation on the performance of GaAs/Ge solar cells, silicon and gallium arsenide on germanium (GaAs/Ge) solar cells were placed in a vacuum chamber and irradiated with ultraviolet light by a Spectrolab XT 10 solar simulator. Seventeen GaAs/Ge and 8 silicon solar cells were mounted on an 8 inch copper block. By having all the cells on the same test plate we were able to do direct comparison of silicon and GaAs/Ge solar cell degradation. The test article was attached to a cold plate in the vacuum chamber to maintain the cells at 25 degrees Celsius. A silicon solar cell standard was used to measure beam uniformity and any degradation of the ST-10 beam. The solar cell coverings tested included cells with AR-0213 coverglass, fused silica coverglass, BRR-0213 coverglass and cells without coverglass. Of interest in the test is the BRR-0213 coverglass material manufactured by OCLI. It has an added Infrared rejection coating to help reduce the solar cell operating temperature. This coverglass is relatively new and of interest to several current and future programs at Marshall. Due to moves of the laboratory equipment and location only 350 hours of UV degradation have been completed. During this testing a significant leveling off in the rate of degradation was reached. Data from the test and comparisons of the UV effect of the bare cells and cells with coverglass material will be presented.

  7. A deep etching mechanism for trench-bridging silicon nanowires

    International Nuclear Information System (INIS)

    Tasdemir, Zuhal; Alaca, B Erdem; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf

    2016-01-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping. (paper)

  8. Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2013-01-01

    Full Text Available The preservation of seed crystals is important for the casting of quasi-single crystalline (QSC silicon ingots. We carried out transient global simulations of the feedstock melting process in an industrial-sized directional solidification (DS furnace to investigate key factors influencing seed preservation. The power distribution between the top and side heaters is adjusted in the conventional furnace for multicrystalline silicon ingots and in the evolved furnace with a partition block for QSC silicon ingots. The evolution of the solid-liquid interface for melting and the temperature distribution in the furnace core area are analyzed. The power distribution can influence the temperature gradient in the silicon domain significantly. However, its effect on seed preservation is limited in both furnaces. Seed crystals can be preserved in the evolved furnace, as the partition block reduces the radiant heat flux from the insulation walls to the heat exchange block and prevents the heat flowing upwards under the crucible. Therefore, the key to seed preservation is to control radiant heat transfer in the DS furnace and guarantee downward heat flux under the crucible.

  9. Topological Order in Silicon Photonics

    Science.gov (United States)

    2017-02-07

    AFRL-AFOSR-VA-TR-2017-0037 Topological orders in Silicon photonics Mohammad Hafezi MARYLAND UNIV COLLEGE PARK 3112 LEE BLDG COLLEGE PARK, MD 20742...15 SEP 2016 4. TITLE AND SUBTITLE Topological Order in Silicon Photonics 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA-9550-14-1-0267 5c. PROGRAM...matter to ultra cold gases. Recently, photonic systems have been under investigation to explore various types of topological orders and to potentially

  10. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  11. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  12. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  13. Porous Silicon for Chemical Sensors

    Science.gov (United States)

    Tsamis, C.; Nassiopoulou, A. G.

    In this work we highlight the advantages of using Porous Silicon (PS) as a material for chemical sensors. Two different applications of PS are investigated: (a) as a matrix for the inclusion of catalytic materials, such as Pd or Pt, and (b) as a material for the fabrication of suspended micro hotplates, for improved thermal isolation. For the first application, the catalytic behavior of Pd-doped PS samples is estimated and the parameters that influence the kinetics of the chemical reaction are evaluated. It is found that the catalytic activity of Pd-doped porous silicon is significantly higher than that of a planar surface covered with Pd. On the other hand, the effectiveness of PS for local thermal isolation on a silicon substrate is examined and the thermal properties of suspended porous silicon (PS) micro-hotplates are investigated. The micro-hotplates are fabricated by a novel technique, based on the isotropic etching of silicon under a PS layer, in a high density plasma reactor. Very high local temperatures on the micro-hotplates (higher than 600°C) with very low power consumption (only a few tens of mW) have been obtained, due to the very low thermal conductivity of PS, which is comparable to that of thermal oxide and it is much lower than that of silicon nitride, typically used for thermal sensor applications.

  14. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

    International Nuclear Information System (INIS)

    Guo Enqing; Liu Zhiqiang; Wang Liancheng; Yi Xiaoyan; Wang Guohong

    2011-01-01

    A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6% and 60.7% higher than that of vertical LEDs without a CBL at 350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%, 78% and 85.5% of their maximum efficiency at 350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability. (semiconductor devices)

  15. Charge trap flash memory using ferroelectric materials as a blocking layer

    Science.gov (United States)

    Seo, Yujeong; An, Ho-Myoung; Yeong Song, Min; Geun Kim, Tae

    2012-04-01

    In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr0.7Bi2.3Nb2O9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (105 P/E cycles) with comparable retention properties.

  16. Left bundle-branch block

    DEFF Research Database (Denmark)

    Risum, Niels; Strauss, David; Sogaard, Peter

    2013-01-01

    The relationship between myocardial electrical activation by electrocardiogram (ECG) and mechanical contraction by echocardiography in left bundle-branch block (LBBB) has never been clearly demonstrated. New strict criteria for LBBB based on a fundamental understanding of physiology have recently...

  17. The wild tapered block bootstrap

    DEFF Research Database (Denmark)

    Hounyo, Ulrich

    -based method in terms of asymptotic accuracy of variance estimation and distribution approximation. For stationary time series, the asymptotic validity, and the favorable bias properties of the new bootstrap method are shown in two important cases: smooth functions of means, and M-estimators. The first......-order asymptotic validity of the tapered block bootstrap as well as the wild tapered block bootstrap approximation to the actual distribution of the sample mean is also established when data are assumed to satisfy a near epoch dependent condition. The consistency of the bootstrap variance estimator for the sample......In this paper, a new resampling procedure, called the wild tapered block bootstrap, is introduced as a means of calculating standard errors of estimators and constructing confidence regions for parameters based on dependent heterogeneous data. The method consists in tapering each overlapping block...

  18. Recursion Relations for Conformal Blocks

    CERN Document Server

    Penedones, João; Yamazaki, Masahito

    2016-09-12

    In the context of conformal field theories in general space-time dimension, we find all the possible singularities of the conformal blocks as functions of the scaling dimension $\\Delta$ of the exchanged operator. In particular, we argue, using representation theory of parabolic Verma modules, that in odd spacetime dimension the singularities are only simple poles. We discuss how to use this information to write recursion relations that determine the conformal blocks. We first recover the recursion relation introduced in 1307.6856 for conformal blocks of external scalar operators. We then generalize this recursion relation for the conformal blocks associated to the four point function of three scalar and one vector operator. Finally we specialize to the case in which the vector operator is a conserved current.

  19. Defying gravity using Jenga™ blocks

    Science.gov (United States)

    Tan, Yin-Soo; Yap, Kueh-Chin

    2007-11-01

    This paper describes how Jenga™ blocks can be used to demonstrate the physics of an overhanging tower that appears to defy gravity. We also propose ideas for how this demonstration can be adapted for the A-level physics curriculum.

  20. Wafer-Scale Nanopillars Derived from Block Copolymer Lithography for Surface-Enhanced Raman Spectroscopy

    DEFF Research Database (Denmark)

    Li, Tao; Wu, Kaiyu; Rindzevicius, Tomas

    2016-01-01

    We report a novel nanofabrication process via block copolymer lithography using solvent vapor annealing. The nanolithography process is facile and scalable, enabling fabrication of highly ordered periodic patterns over entire wafers as substrates for surface-enhanced Raman spectroscopy (SERS......). Direct silicon etching with high aspect ratio templated by the block copolymer mask is realized without any intermediate layer or external precursors. Uniquely, an atomic layer deposition (ALD)-assisted method is introduced to allow reversing of the morphology relative to the initial pattern. As a result......, highly ordered silicon nanopillar arrays are fabricated with controlled aspect ratios. After metallization, the resulting nanopillar arrays are suitable for SERS applications. These structures readily exhibit an average SERS enhancement factor of above 108, SERS uniformities of 8.5% relative standard...

  1. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  2. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  3. Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices

    International Nuclear Information System (INIS)

    Roca i Cabarrocas, P; Nguyen-Tran, Th; Djeridane, Y; Abramov, A; Johnson, E; Patriarche, G

    2007-01-01

    The synthesis of silicon nanocrystals in standard radio-frequency glow discharge systems is studied with respect to two main objectives: (i) the production of devices based on quantum size effects associated with the small dimensions of silicon nanocrystals and (ii) the synthesis of polymorphous and polycrystalline silicon films in which silicon nanocrystals are the elementary building blocks. In particular we discuss results on the mechanisms of nanocrystal formation and their transport towards the substrate. We found that silicon nanocrystals can contribute to a significant fraction of deposition (50-70%) and that they can be positively charged. This has a strong influence on their deposition because positively charged nanocrystals will be accelerated towards the substrate with energy of the order of the plasma potential. However, the important parameter with respect to the deposition of charged nanocrystals is not the accelerating voltage but the energy per atom and thus a doubling of the diameter will result in a decrease in the energy per atom by a factor of 8. To leverage this geometrical advantage we propose the use of more electronegative gases, which may have a strong effect on the size and charge distribution of the nanocrystals. This is illustrated in the case of deposition from silicon tetrafluoride plasmas in which we observe low-frequency plasma fluctuations, associated with successive generations of nanocrystals. The contribution of larger nanocrystals to deposition results in a lower energy per deposited atom and thus polycrystalline films

  4. Silicon-Containing Amino Acids: Synthetic Aspects, Conformational Studies, and Applications to Bioactive Peptides.

    Science.gov (United States)

    Rémond, Emmanuelle; Martin, Charlotte; Martinez, Jean; Cavelier, Florine

    2016-10-12

    Unnatural α-amino acids form a family of essential molecules used for, among other applications, the synthesis of modified peptides, to improve resistance to proteolytic enzyme degradation, and to modulate physico- and biochemical properties of bioactive peptides as well as chiral inducers in asymmetric synthesis. Among them, silicon-containing unnatural amino acids are becoming an interesting new class of building blocks. The replacement of carbon atoms in bioactive substances with silicon is becoming increasingly popular. Peptides containing silyl amino acids hold great promise for maintaining or reinforcing the biological activity of active compounds, while they simultaneously enhance their resistance to enzyme degradation. In addition, the lipophilicity of the silicon atom facilitates their membrane crossing and their bioavailability. Nowadays, the interest of the pharmaceutical industry in peptide- and protein-based therapies is increasing. In this respect, silicon-containing amino acids and peptides are likely to be a significant part of future innovations in this area, and more generally in the area of biomolecules. In this process, commercial availability of silicon-containing amino acids is necessary: new syntheses have been developed, and work in this area is ongoing. This review aims to be a comprehensive and general summary of the different methods used to prepare silicon-containing amino acids and their implications on conformational structures and biological applications when they are incorporated into bioactive molecules.

  5. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    Science.gov (United States)

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  6. Analysis of Separated Flow over Blocked Surface

    Directory of Open Access Journals (Sweden)

    Onur YEMENİCİ

    2013-04-01

    Full Text Available In this study, the separated flow over flat and blocked surfaces was investigated experimentally. Velocity and turbulence intensity measurements were carried out by a constanttemperature hot wire anemometer and static pressure measurements by a micro-manometer. The flow separations and reattachments were occurred before the first block, on the first block, between blocks and after the last block, and the presence of the blocks significantly increased the turbulent intensity

  7. Various semiclassical limits of torus conformal blocks

    Energy Technology Data Exchange (ETDEWEB)

    Alkalaev, Konstantin [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physical Institute,Leninsky ave. 53, Moscow, 119991 (Russian Federation); Department of General and Applied Physics, Moscow Institute of Physics and Technology,Institutskiy per. 7, Dolgoprudnyi, Moscow region, 141700 (Russian Federation); Geiko, Roman [Mathematics Department, National Research University Higher School of Economics,Usacheva str. 6, Moscow, 119048 (Russian Federation); Rappoport, Vladimir [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physical Institute,Leninsky ave. 53, Moscow, 119991 (Russian Federation); Department of Quantum Physics, Institute for Information Transmission Problems,Bolshoy Karetny per. 19, Moscow, 127994 (Russian Federation)

    2017-04-12

    We study four types of one-point torus blocks arising in the large central charge regime. There are the global block, the light block, the heavy-light block, and the linearized classical block, according to different regimes of conformal dimensions. It is shown that the blocks are not independent being connected to each other by various links. We find that the global, light, and heavy-light blocks correspond to three different contractions of the Virasoro algebra. Also, we formulate the c-recursive representation of the one-point torus blocks which is relevant in the semiclassical approximation.

  8. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding......Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...

  9. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  10. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  11. Silicon-micromachined microchannel plates

    Energy Technology Data Exchange (ETDEWEB)

    Beetz, Charles P. E-mail: NanoSystem@aol.com; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R. E-mail: winn@fair1.fairfield.edu

    2000-03-11

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of {approx}0.5 to {approx}25 {mu}m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  12. Silicon-micromachined microchannel plates

    Science.gov (United States)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-03-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ˜0.5 to ˜25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200°C, also compatible with high-temperture brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  13. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  14. Coherent control of the silicon-vacancy spin in diamond

    Science.gov (United States)

    Pingault, Benjamin; Jarausch, David-Dominik; Hepp, Christian; Klintberg, Lina; Becker, Jonas N.; Markham, Matthew; Becher, Christoph; Atatüre, Mete

    2017-05-01

    Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115+/-9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single-phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.

  15. BUILDING MATERIALS AND PRODUCTS BASED ON SILICON MANGANESE SLAGS

    Directory of Open Access Journals (Sweden)

    BOLSHAKOV V. I.

    2016-05-01

    Full Text Available Raising of problem. Currently of particular relevance was given to the matter of introduction in manufacture of building materials and products, resource-saving techniques and technologies; integrated use of raw materials and materials that prevent or significantly reduce their harmful impact on the environment. This allows you to recycle hundreds of thousands of tons of the fiery liquid slags of silicon manganese and to develop effective structural materials that can replace metals, non-metallic building materials of natural origin, concretes, cast stone, plastics and refractories. Purpose. The study of the structure and properties of building materials and products from electric furnace slag of silicon manganese. Conclusion. Slags from the smelting of silicon manganese are classified as acidic. Their lime factor is in the range of 0.47–0.52. The composition of the slag located in the heterogeneous region SiO2 near the line of separation of cristobalite spread to the crystallization of wollastonite, according to the ternary system MnO-CaO-SiO2, which in consideration of their stability, allows the development of technology of building materials (gravel, sand, granulated slag, etc. and products (foundation blocks, road slabs, containers for transportation and storage of hazardous waste, and others.

  16. Tritel: 3D silicon detector telescope used for space dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Pazmandi, T.; Hirn, A.; Deme, S.; Apathy, I.; Csoke, A. [KFKI Atomic Energy Research Institute, Budapest (Hungary); Bodnar, L. [BL-Electronics, Solymar (Hungary)

    2006-07-01

    One of the many risks of long-duration space flights is the excessive exposure to cosmic radiation, which has great importance particularly during solar flares and higher solar activity. Radiation weighting factor, which is a function of the linear energy transfer of the radiation, is used to convert absorbed dose to equivalent dose. Since space radiation mainly consists of charged heavy particles, the equivalent dose differs significantly from the absorbed dose. The objectives of this project are to develop and manufacture a three-axis silicon detector telescope (Tritel), and to develop software for data evaluation of the measured energy deposition spectra. The 3 D silicon telescope should be the first such device used for measuring the dose astronauts are subjected to. Research and development began in the K.F.K.I. Atomic Energy Research Institute several years ago. The geometric parameters of the 3 D silicon Let telescope were defined, results of previous measurements were used as a benchmark. Features of various types and sizes of telescopes were analyzed. Elements of the Tritel telescope system, issues of the electronic block diagram, requirements for the mechanical construction and possibilities of data handling and data evaluation are analyzed in this paper. First results of the calibrations are presented as well. (authors)

  17. Laser direct written silicon nanowires for electronic and sensing applications

    Science.gov (United States)

    Nam, Woongsik

    Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, orientation, and length. The synthesized nanowires have been fabricated into field effect transistors (FETs) and FET sensors. The FET sensors are employed to detect the proton concentration (pH) of an aqueous solution and highly sensitive pH sensing is demonstrated. Both top- and back-gated silicon nanowire FETs are demonstrated and electrically characterized. In addition, modulation-doped nanowires are synthesized by changing dopant gases during the nanowire growth. The axial p-n junction nanowires are electrically characterized to demonstrate the diode behavior and the transition between dopant levels are measured using Kelvin probe force microscopy.

  18. Silicon Photomultipliers (SiPM) as novel photodetectors for PET

    International Nuclear Information System (INIS)

    Del Guerra, Alberto; Belcari, Nicola; Giuseppina Bisogni, Maria; Corsi, Francesco; Foresta, Maurizio; Guerra, Pedro; Marcatili, Sara; Santos, Andres; Sportelli, Giancarlo

    2011-01-01

    Next generation PET scanners should fulfill very high requirements in terms of spatial, energy and timing resolution. Modern scanner performances are inherently limited by the use of standard photomultiplier tubes. The use of Silicon Photomultipliers (SiPMs) is proposed for the construction of a 4D-PET module of 4.8x4.8 cm 2 aimed to replace the standard PMT based PET block detector. The module will be based on a LYSO continuous crystal read on two faces by Silicon Photomultipliers. A high granularity detection surface made by SiPM matrices of 1.5 mm pitch will be used for the x-y photon hit position determination with submillimetric accuracy, while a low granularity surface constituted by 16 mm 2 SiPM pixels will provide the fast timing information (t) that will be used to implement the Time of Flight technique (TOF). The spatial information collected by the two detector layers will be combined in order to measure the Depth of Interaction (DOI) of each event (z). The use of large area multi-pixel Silicon Photomultiplier (SiPM) detectors requires the development of a multichannel Data Acquisition system (DAQ) as well as of a dedicated front-end in order not to degrade the intrinsic detector capabilities and to manage many channels. The paper describes the progress made on the development of the proof of principle module under construction at the University of Pisa.

  19. Multifractal characterization of epitaxial silicon carbide on silicon

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2017-10-01

    Full Text Available The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

  20. Radial Coordinates for Conformal Blocks

    CERN Document Server

    Hogervorst, Matthijs

    2013-01-01

    We develop the theory of conformal blocks in CFT_d expressing them as power series with Gegenbauer polynomial coefficients. Such series have a clear physical meaning when the conformal block is analyzed in radial quantization: individual terms describe contributions of descendants of a given spin. Convergence of these series can be optimized by a judicious choice of the radial quantization origin. We argue that the best choice is to insert the operators symmetrically. We analyze in detail the resulting "rho-series" and show that it converges much more rapidly than for the commonly used variable z. We discuss how these conformal block representations can be used in the conformal bootstrap. In particular, we use them to derive analytically some bootstrap bounds whose existence was previously found numerically.

  1. Diversity Gain through Antenna Blocking

    Directory of Open Access Journals (Sweden)

    V. Dehghanian

    2012-01-01

    Full Text Available As part of the typical usage mode, interaction between a handheld receiver antenna and the operator's RF absorbing body and nearby objects is known to generate variability in antenna radiation characteristics through blocking and pattern changes. It is counterintuitive that random variations in blocking can result in diversity gain of practical applicability. This diversity gain is quantified from a theoretical and experimental perspective. Measurements carried out at 1947.5 MHz verify the theoretical predictions, and a diversity gain of 3.1 dB was measured through antenna blocking and based on the utilized measurement setup. The diversity gain can be exploited to enhance signal detectability of handheld receivers based on a single antenna in indoor multipath environments.

  2. Cryptanalysis of Selected Block Ciphers

    DEFF Research Database (Denmark)

    Alkhzaimi, Hoda A.

    , pseudorandom number generators, and authenticated encryption designs. For this reason a multitude of initiatives over the years has been established to provide a secure and sound designs for block ciphers as in the calls for Data Encryption Standard (DES) and Advanced Encryption Standard (AES), lightweight...... ciphers initiatives, and the Competition for Authenticated Encryption: Security, Applicability, and Robustness (CAESAR). In this thesis, we first present cryptanalytic results on different ciphers. We propose attack named the Invariant Subspace Attack. It is utilized to break the full block cipher...... on the family of lightweight block cipher SIMON that was published by the U.S National Security Agency (NSA). The ciphers are developed with optimization towards both hardware and software in mind. While the specification paper discusses design requirements and performance of the presented lightweight ciphers...

  3. Climatological features of blocking anticyclones

    International Nuclear Information System (INIS)

    Lupo, A.R.; Smith, P.J.; Oglesby, R.J.

    1994-01-01

    Several climatological studies have been previously performed using large observational data sets (i.e., 10 years or longer) in order to determine the predominant characteristics of blocking anticyclones, including favored development regions, duration, preferred seasonal occurrence, and frequency of occurrence. These studies have shown that blocking anticyclones occur most frequently from October to April over the eastern Atlantic and Pacific oceans downstream from both the North American and Asian continental regions and the storm track regions to the east of these continents. Some studies have also revealed the presence of a third region block formation in western Russia near 40 degrees E which is associated with another storm track region over the Mediterranean and western Asia

  4. Projectors, shadows, and conformal blocks

    Energy Technology Data Exchange (ETDEWEB)

    Simmons-Duffin, David [Jefferson Physical Laboratory, Harvard University,Cambridge, MA 02138 (United States)

    2014-04-24

    We introduce a method for computing conformal blocks of operators in arbitrary Lorentz representations in any spacetime dimension, making it possible to apply bootstrap techniques to operators with spin. The key idea is to implement the “shadow formalism' of Ferrara, Gatto, Grillo, and Parisi in a setting where conformal invariance is manifest. Conformal blocks in d-dimensions can be expressed as integrals over the projective null-cone in the “embedding space' ℝ{sup d+1,1}. Taking care with their analytic structure, these integrals can be evaluated in great generality, reducing the computation of conformal blocks to a bookkeeping exercise. To facilitate calculations in four-dimensional CFTs, we introduce techniques for writing down conformally-invariant correlators using auxiliary twistor variables, and demonstrate their use in some simple examples.

  5. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  6. The LHCb Silicon Tracker Project

    Energy Technology Data Exchange (ETDEWEB)

    Agari, M. [Max Planck Institute for Nuclear Physics (Germany); Bauer, C. [Max Planck Institute for Nuclear Physics (Germany); Baumeister, D. [Max Planck Institute for Nuclear Physics (Germany); Blouw, J. [Max Planck Institute for Nuclear Physics (Germany)]. E-mail: Johan.Blouw@mpi-hd.mpg.de; Hofmann, W. [Max Planck Institute for Nuclear Physics (Germany); Knoepfle, K.T. [Max Planck Institute for Nuclear Physics (Germany); Loechner, S. [Max Planck Institute for Nuclear Physics (Germany); Schmelling, M. [Max Planck Institute for Nuclear Physics (Germany); Pugatch, V. [Kiev Institute for Nuclear Research (Ukraine); Bay, A. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Carron, B. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Frei, R. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Jiminez-Otero, S. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Tran, M.-T. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Voss, H. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Adeva, B. [Universidad de Santiago de Compostela (Spain); Esperante, D. [Universidad de Santiago de Compostela (Spain); Lois, C. [Universidad de Santiago de Compostela (Spain); Vasquez, P. [Universidad de Santiago de Compostela (Spain); Bernhard, R.P. [Physik-Insitut Universitaet Zuerich (Switzerland); Bernet, R. [Physik-Insitut Universitaet Zuerich (Switzerland); Ermoline, Y. [Physik-Insitut Universitaet Zuerich (Switzerland); Gassner, J. [Physik-Insitut Universitaet Zuerich (Switzerland); Koestner, S. [Physik-Insitut Universitaet Zuerich (Switzerland); Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D. [Physik-Insitut Universitaet Zuerich (Switzerland)

    2006-01-15

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.

  7. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  8. The LHCb silicon tracker project

    CERN Document Server

    Blouw, J

    2004-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(IT) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.

  9. Syringe siliconization process investigation and optimization.

    Science.gov (United States)

    Chan, Edwin; Hubbard, Aaron; Sane, Samir; Maa, Yuh-Fun

    2012-01-01

    The interior barrel of the prefilled syringe is often lubricated/siliconized by the syringe supplier or at the syringe filling site. Syringe siliconization is a complex process demanding automation with a high degree of precision; this information is often deemed "know-how" and is rarely published. The purpose of this study is to give a detailed account of developing and optimizing a bench-top siliconization unit with nozzle diving capabilities. This unit comprises a liquid dispense pump unit and a nozzle integrated with a Robo-cylinder linear actuator. The amount of coated silicone was determined by weighing the syringe before and after siliconization, and silicone distribution was visually inspected by glass powder coating or characterized by glide force testing. Nozzle spray range, nozzle retraction speed, silicone-coated amount, and air-to-nozzle pressure were found to be the key parameters affecting silicone distribution uniformity. Distribution uniformity is particularly sensitive to low-target silicone amount where the lack of silicone coating on the barrel near the needle side often caused the syringes to fail the glide force test or stall when using an autoinjector. In this bench-top unit we identified optimum coating conditions for a low silicone dose, which were also applicable to a pilot-scale siliconization system. The pilot unit outperformed the bench-top unit in a tighter control (standard deviation) in coated silicone amount due to the elimination of tubing flex. Tubing flex caused random nozzle mis-sprays and was prominent in the bench-top unit, while the inherent design of the pilot system substantially limited tubing flux. In summary, this bench-top coating unit demonstrated successful siliconization of the 1 mL long syringe with ∼0.2 mg of silicone oil using a spraying cycle also applicable to larger-scale siliconization. Syringe siliconization can be considered a well-established manufacturing process and has been implemented by numerous

  10. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  11. Projectors, Shadows, and Conformal Blocks

    OpenAIRE

    Simmons-Duffin, David

    2012-01-01

    We introduce a method for computing conformal blocks of operators in arbitrary Lorentz representations in any spacetime dimension, making it possible to apply bootstrap techniques to operators with spin. The key idea is to implement the “shadow formalism” of Ferrara, Gatto, Grillo, and Parisi in a setting where conformal invariance is manifest. Conformal blocks in d -dimensions can be expressed as integrals over the projective null-cone in the “embedding space” $ \\mathbb{R} $ d +1,1 . Taking ...

  12. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    International Nuclear Information System (INIS)

    Timokhov, D. F.; Timokhov, F. P.

    2009-01-01

    Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

  13. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  14. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  15. Cold-Crucible Premelter for Silicon

    Science.gov (United States)

    Lane, R. L.

    1984-01-01

    System allows replenishment of silicon melt in crystal puller. Cold crucible consists of water-cooled, silver plated boat in 500kHz field. Induced secondary currents cause preheated chunks of silicon to melt. Magnetic repulsion between current in silicon and in boat prevents silicon from touching boat. Used for crystal growth of other materials sufficiently conductive and difficult to keep free of contamination by container walls at temmperature of operation.

  16. Silicon sources for rice crop

    Directory of Open Access Journals (Sweden)

    Pereira Hamilton Seron

    2004-01-01

    Full Text Available Although silicon is not an essential nutrient, its application is beneficial for plant growth and development. To evaluate silicon sources in relation to agronomic efficiency and economic viability in rice crops (Oryza sativa L., a greenhouse experiment was conducted, Quartzipsamment soil, in a completely randomized experimental design (n = 4. Treatments were 12 silicon sources and a control. Silicon was applied at the rate of 125 kg Si ha-1. Data were compared to a standard response curve for Si using the standard source Wollastonite at rates of 0, 125, 250, 375, and 500 kg Si ha-1. All treatments received CaCO3 and MgCO3 to balance pH, Ca and Mg. One hundred and fifty days after sowing, evaluations on dry matter yield in the above-ground part of plants, grain yield, and Si contents in the soil and plant tissues were performed. Wollastonite had linear response, increasing silicon in the soil and plants with increasing application rates. Differences between silicon sources in relation to Si uptake were observed. Phosphate slag provided the highest Si uptake, followed by Wollastonite and electric furnace silicates which however, did not show differed among themselves. The highest Si accumulation in grain was observed for stainless steel, which significantly differed from the control, silicate clay, Wollastonite, and AF2 (blast furnace of the company 2 slag. Silicate clay showed the lowest Si accumulation in grain and did not differ from the control, AF2 slag, AF1 slag, schist ash, schist, and LD4 (furnace steel type LD of the company 4 slag.

  17. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  18. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  19. Diffusion of terbium in silicon

    International Nuclear Information System (INIS)

    Nazyrov, D.Eh.

    2006-01-01

    The diffusion of terbium in silicon is studied by tracer technique in the temperature range 1100-1250 deg C. The diffusion coefficient of terbium, D Tb , is shown to increase with temperature from 4 x 10 -14 to 10 -12 cm 2 /s. The temperature dependence of D Tb at temperatures studied obeys the Arrhenius law according to: D Tb [cm 2 /s] = 5 x 10 -2 exp(-3.3 eV/kT). Experimental data on D Tb and activation energy (E a = 3.3 eV) suggest that terbium dopant diffuses in silicon along the crystal lattice nodes [ru

  20. Polarized electroluminescence from silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, Nikolay; Danilovsky, Eduard; Gets, Dmitry; Klyachkin, Leonid; Kudryavtsev, Andrey; Kuzmin, Roman; Malyarenko, Anna [Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation); Mashkov, Vladimir [St. Petersburg State Polytechnical University, 195251 St. Petersburg (Russian Federation)

    2012-05-15

    We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {delta}-barriers heavily doped with boron. The CPEL dependences on the forward current and lateral electric field show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW-{delta}-barriers interface with the assistance of phosphorus donors. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  2. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  3. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  4. Serial Powering of Silicon Sensors

    CERN Document Server

    Villani, E G; Tyndel, M; Apsimon, R

    2007-01-01

    Serial powering is a technique to provide power to a number of serially chained detector modules. It is an alternative option to independent powering that is particularly attractive when the number of modules is high, as in largescale silicon tracking detectors for particle physics. It uses a single power cable and a constant current source. On each module power is derived using local shunt regulators. Design aspects of local shunt regulators and system aspects of serial powering will be discussed. Test results and measurements obtained with a silicon strip supermodule will be presented. Specifications of radiation-hard custom serial powering circuitry will be discussed.

  5. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    to microwave systems and biosensing devices. An ultra-low loss inverse taper coupler for interfacing silicon ridge waveguides and optical bers is introduced and insertion losses of less than 1 dB are achieved for both transverse-electric (TE) and transversemagnetic (TM) polarizations. Integrated...... with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...

  6. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  7. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  8. 77 FR 20649 - Silicon Metal From China

    Science.gov (United States)

    2012-04-05

    ... COMMISSION Silicon Metal From China Determination On the basis of the record \\1\\ developed in the subject... order on silicon metal from China would be likely to lead to continuation or recurrence of material... Publication 4312 (March 2012), entitled Silicon Metal from China: Investigation No. 731-TA-472 (Third Review...

  9. Analysis of silicon transporters in turfgrass species

    Science.gov (United States)

    Silicon is an abundant element on earth and is also known to be beneficial as an amendment in some crops such as rice. Despite its abundance in many soils, accumulation of silicon in plants is species-specific and can be widely different. It has been shown that the genes responsible for silicon upta...

  10. Aquaporins Mediate Silicon Transport in Humans.

    Science.gov (United States)

    Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

    2015-01-01

    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  11. 21 CFR 573.940 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in...

  12. 21 CFR 172.480 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food in...

  13. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  14. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

    2008-01-01

    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  15. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Scheeper, P.R.; Voorthuyzen, J.A.; Voorthuyzen, J.A.; Bergveld, Piet

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile

  16. Aquaporins Mediate Silicon Transport in Humans.

    Directory of Open Access Journals (Sweden)

    Alexandre P Garneau

    Full Text Available In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1, a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1 the kinetics of substrate transport, 2 their presence in tissues where silicon is presumed to play key roles and 3 their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  17. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  18. Silicon/Porous Silicon Composite Membrane for High Sensitivity Pressure Sensor

    Science.gov (United States)

    2009-07-21

    for integrating with other processes on silicon wafer. The fabrication of silicone rubber membranes for making microvalves has been reported [5...alcohol (IPA) is used along with HF to increase the wettability of the silicon surface and to remove the bubbles formed during the reaction. Aluminium ...Report for AOARD funded Project No. AOARD-074061 Title: Silicon /Porous Silicon composite membrane for high sensitivity pressure sensor PI

  19. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  20. Main-chain supramolecular block copolymers.

    Science.gov (United States)

    Yang, Si Kyung; Ambade, Ashootosh V; Weck, Marcus

    2011-01-01

    Block copolymers are key building blocks for a variety of applications ranging from electronic devices to drug delivery. The material properties of block copolymers can be tuned and potentially improved by introducing noncovalent interactions in place of covalent linkages between polymeric blocks resulting in the formation of supramolecular block copolymers. Such materials combine the microphase separation behavior inherent to block copolymers with the responsiveness of supramolecular materials thereby affording dynamic and reversible materials. This tutorial review covers recent advances in main-chain supramolecular block copolymers and describes the design principles, synthetic approaches, advantages, and potential applications.

  1. Building Blocks for Personal Brands

    Science.gov (United States)

    Thomas, Lisa Carlucci

    2011-01-01

    In this article, the author discusses the four essential building blocks for personal brands: (1) name; (2) message; (3) channels; and (4) bridges. However, outstanding building materials can only take a person so far. The author emphasizes that vision, determination, faith, a sense of humor, and humility are also required.

  2. Control rod removal blocking device

    International Nuclear Information System (INIS)

    Yoshioka, Ritsuo.

    1981-01-01

    Purpose: To prevent excess power increase resulted from erroneous control rod removal during high power operation in BWR type reactor by decreasing the continuous removal enabling distance for the control rods along with increase in the reactor power where the reactor power is greater than a predetermined level. Constitution: When control rod selection signals are supplied from a control unit to a control rod removal blocking device, the blocking device judges whether the reactor core power is greater than a predetermined value A or not, using reactor core power signals outputted from an average power monitor. Where the reactor core power exceeds the predetermined value A and if the reactor core power is relatively low, a large continuous removal enabling distance N 1 is calculated in the blocking device to allow the continuous removal as far as the notch N 1 . The continuous removal enabling distance is shortened as the reactor core power increases and the removal is blocked, for example, at notch N 2 . While on the other hand, if the reactor core power is below the predetermined value A, both of the notchwise removal and the continuous removal are enabled. (Seki, T.)

  3. First Degree Pacemaker Exit Block

    Directory of Open Access Journals (Sweden)

    Johnson Francis

    2016-10-01

    Full Text Available Usually atrial and ventricular depolarizations follow soon after the pacemaker stimulus (spike on the ECG. But there can be an exit block due to fibrosis at the electrode - tissue interface at the lead tip. This can increase the delay between the spike and atrial or ventricular depolarization.

  4. Vagal Blocking for Obesity Control

    DEFF Research Database (Denmark)

    Johannessen, Helene; Revesz, David; Kodama, Yosuke

    2017-01-01

    BACKGROUND: Recently, the US FDA has approved "vagal blocking therapy or vBLoc® therapy" as a new treatment for obesity. The aim of the present study was to study the mechanism-of-action of "VBLOC" in rat models. METHODS: Rats were implanted with VBLOC, an intra-abdominal electrical device...

  5. Thermo-responsive block copolymers

    NARCIS (Netherlands)

    Mocan Cetintas, Merve

    2017-01-01

    Block copolymers (BCPs) are remarkable materials because of their self-assembly behavior into nano-sized regular structures and high tunable properties. BCPs are in used various applications such as surfactants, nanolithography, biomedicine and nanoporous membranes. In these thesis, we aimed to

  6. Scintigraphic visualization of 'Blocking' thyroid

    International Nuclear Information System (INIS)

    Simeonova, A.; Kostadinova, I.

    2006-01-01

    Full text: An important problem in nuclear endocrinology is 'blocking' of thyroid gland, which necessitates postpone of the investigation, adverse clinical effect of stopping medications and a delay of making diagnosis. The aim of the study was to introduce and to determine the clinical value of the scintigraphy with 99mTc-MIBI in patients (Pts) with 'blocked thyroid'. In 365 Pts (aged 38-75 years), indicated for a thyroid scintigraphy after proper preparation, an investigation was performed with 74 MBq 99mTc-pertechnetate, 20 min. p.i. In 14 of them (3.8%), the thyroid was 'blocked' and additional scintigraphy was done with 370-555 MBq 99mTc-MIBI, 15 and 120 min.p.i. It was estimated that in all Pts there was a visualization of thyroid. In 1 of them, a large 'hot' nodule was visualized in the early and late image. Later on a differentiated thyroid carcinoma was proved histologically. In the rest of the patients 'cold' nodules with different size were visualized, eventually as a result of cysts. As a conclusion we consider, that a scintigraphy with 99mTc-MIBI is a useful tool in Pts with 'blocked' thyroid. In addition an evaluation of the thyroid nodule could be done and therefore- a recommendation for therapy

  7. Implementation of a design for testability strategy using the Genesil silicon compiler

    Science.gov (United States)

    Davidson, John C.

    1989-03-01

    Design for Testability (DFT) is receiving major emphasis in the very large scale integration design field due to increasing circuit complexity. The utility of the silicon compiler and its value to a system designer without extensive VLSI design experience is discussed. Two major techniques for DFT, Scanpath Design and Built-in Test Design, are implemented using the Genesil silicon compiler. The basic building block, the shiftable test latch, is described in random logic block form and parallel datapath form. Linear feedback shift registers used as random vector generators and signature analyzers are used in the Built-in Test design. An Automatic Test Generation program is used to provide a measure of fault coverage for the two DFT techniques. The appendix is a brief tutorial illustrating the use of the Genesil system's shiftable test latch in its different configurations.

  8. All dielectric reflective metasurface for controlling phase and polarization by using silicon nanoblocks

    Science.gov (United States)

    Kim, Youngsoo; Lee, Young Jin; Hong, Seokhyeun; Moon, Kihwan; Kwon, Soon-Hong

    2017-09-01

    We suggest all dielectric metasurfaces composed of silicon (Si) nanoblock array. We can control the phase and polarization of light reflected the metasurface by changing Mie scattering of each Si block. The Mie scattering is easily adjusted by changing structure parameters of Si block width and height. In single Si nanoblock, the magnetic dipole resonance mode was diminished when decreasing its height. In this study, for making 2-dimensional metasurface, we analyze the scattering cross-section by changing width and height of Si nanoblock with finite-difference time-domain method.

  9. The radiation damage in silicon diodes induced by stray fast neutrons from the ANSTO Cyclotron

    International Nuclear Information System (INIS)

    Mukherjee, B.

    1996-01-01

    Intense flux of fast neutrons are produced during routine isotope production runs at the National Medical Cyclotron. These stray neutrons induce irreversible displacement damage in the semiconductor devices, the vital building blocks of the various electronic instruments used in the facility. This poster highlights the results of the radiation hardness investigation study of commercial silicon diodes undertaken at the Health Physics laboratory of the National Medical Cyclotron

  10. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schrof, Julian, E-mail: julian.schrof@ise.fraunhofer.de; Müller, Ralph; Benick, Jan; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, D-79110 Freiburg (Germany); Reedy, Robert C. [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-07-28

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after

  11. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schrof, Julian; Müller, Ralph; Reedy, Robert C.; Benick, Jan; Hermle, Martin

    2015-07-28

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3

  12. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    Science.gov (United States)

    Schrof, Julian; Müller, Ralph; Reedy, Robert C.; Benick, Jan; Hermle, Martin

    2015-07-01

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3

  13. Self-assembled silicon oxide nanojunctions

    International Nuclear Information System (INIS)

    Lin, L W; Tang, Y H; Chen, C S

    2009-01-01

    Novel silicon oxide nanojunction structures with various shapes, such as X type, Y type, T type, ringlike and treelike, are fabricated in a self-assembled manner by the hydrothermal method without any metallic catalyst. In the silicon oxide nanojunctions, both the silicon oxide nanowire part and the junction part consist of the same chemical composition, forming homogeneous homojunctions and being made suitable for application in nanoscale optoelectronics devices. The formation of silicon oxide nanojunctions may be influenced by the surrounding environment in the reaction kettle, growth space among the silicon oxide nanowires and the weight of SiO droplets at the growth tip.

  14. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  15. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  16. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  17. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  18. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  19. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    2013-06-09

    Jun 9, 2013 ... conditions (ultraviolet light, air pollution, temperature), fragile margins, microbial growth on the open pores of the elastomers leading to rapid degradation of color dexterity. The cheek silicone prosthesis although constructed to the patient's esthetic requirement retaining the same on the face is complicated.

  20. Handbook of semiconductor silicon technology

    National Research Council Canada - National Science Library

    O'Mara, William C; Herring, Robert B; Hunt, Lee Philip

    1990-01-01

    ..., the annual worldwide production of steel and aluminum amounts to hundreds of thousands of tons. In spite of its relatively small volume, the impact of silicon production is multiplied manyfold by the devices and electronic systems that are based on its properties. There have been many attempts to find improved materials with 'better' propert...

  1. Let’s talk silicon

    Science.gov (United States)

    While silicon (Si) has been a known plant nutrient for centuries, how plants use this element is still poorly understood. Researchers have identified how plants acquire Si from the environment and transport the element to all plant tissues, including roots, stems, petioles, leaves and flowers. We ...

  2. Mesoporous Silicon-Based Anodes

    Science.gov (United States)

    Peramunage, Dharmasena

    2015-01-01

    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  3. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  4. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  5. Impurities of oxygen in silicon

    International Nuclear Information System (INIS)

    Gomes, V.M.S.

    1985-01-01

    The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

  6. The GEM Silicon Tracking System

    International Nuclear Information System (INIS)

    Mills, G.B.

    1993-01-01

    The GEM Collaboration has produced a baseline design for the GEM detector. The baseline design of the GEM Silicon Tracking System (STS) is discussed in this article. Mechanical and electrical engineering progress on the GEM STS is described. Results from simulations of detector performance and the implications on engineering issues are described

  7. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  8. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  9. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  10. High purity silane and silicon production

    Science.gov (United States)

    Breneman, William C. (Inventor)

    1987-01-01

    Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

  11. Inert gas atomization of chemical grade silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, D.; Ferreira Neto, J.B.; Salgado, L.; Nogueira, P.F.; Poco, J.G.R. [Metallurgy Div. Cidade Univ., Inst. for Technological Research, Sao Paulo, SP (Brazil)

    2001-07-01

    The use of inert gas atomization to obtain chemical grade silicon particles was investigated. Both cooling rate and chemical composition are very important regarding a tailored microstructure, related with silicon performance during the synthesis of the silanos, an intermediary raw material in the silicone production. Previously refined silicon was used as raw material. Silicon with different aluminum contents were atomized and analyzed. The atomization temperature was set around 1520 C, and it was used a confined atomization nozzle. It was necessary to use a long atomization chamber to allow the cooling of the coarse silicon particles. After atomization, the powder was characterized and classified. The coarse fraction was milled. Two different particle size groups (different cooling rates) and the as atomized particles were investigated. The chemical behavior during the synthesis of the silanos was analyzed in a laboratory reactor. The relationship between cooling rate, aluminum content and silicon performance during the silanos synthesis is discussed. (orig.)

  12. 31 CFR 585.216 - Expenses of maintaining blocked property; liquidation into blocked account.

    Science.gov (United States)

    2010-07-01

    ... property; liquidation into blocked account. 585.216 Section 585.216 Money and Finance: Treasury Regulations... blocked property; liquidation into blocked account. (a) Except as otherwise authorized, and... expenses incident to the blocking and maintenance of property blocked pursuant to § 585.201 or § 585.215(a...

  13. On the Eigenvalues and Eigenvectors of Block Triangular Preconditioned Block Matrices

    KAUST Repository

    Pestana, Jennifer

    2014-01-01

    Block lower triangular matrices and block upper triangular matrices are popular preconditioners for 2×2 block matrices. In this note we show that a block lower triangular preconditioner gives the same spectrum as a block upper triangular preconditioner and that the eigenvectors of the two preconditioned matrices are related. © 2014 Society for Industrial and Applied Mathematics.

  14. Silicon-Based Anode and Method for Manufacturing the Same

    Science.gov (United States)

    Yushin, Gleb Nikolayevich (Inventor); Luzinov, Igor (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor)

    2017-01-01

    A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

  15. Block-Matching Based Multifocus Image Fusion

    Directory of Open Access Journals (Sweden)

    Feng Zhu

    2015-01-01

    Full Text Available A new multifocus image fusion method is proposed. Two image blocks are selected by sliding the window from the two source images at the same position, discrete cosine transform (DCT is implemented, respectively, on these two blocks, and the alternating component (AC energy of these blocks is then calculated to decide which is the well-focused one. In addition, block matching is used to determine a group of image blocks that are all similar to the well-focused reference block. Finally, all the blocks are returned to their original positions through weighted average. The weight is decided with the AC energy of the well-focused block. Experimental results demonstrate that, unlike other spatial methods, the proposed method effectively avoids block artifacts. The proposed method also significantly improves the objective evaluation results, which are obtained by some transform domain methods.

  16. Blocking incidental frustration during bargaining.

    Science.gov (United States)

    Vargas, Maria Esperanza S; Brown, Anna-Leigh; Durkee, Cassandra M; Sim, Hoeun

    2018-02-08

    The current study examined the effects of an intervention aimed at blocking the transfer of frustration from a previous experience (i.e. recall task) to a subsequent and unrelated task (i.e. ultimatum bargaining task). Participants who went through the intervention were more likely to accept unfair offers in the ultimatum bargaining task than those who did not go through the intervention. These results show that participants who were blocked from transferring their feelings of frustration from the recall task to the subsequent bargaining task (no-transfer condition) more likely accepted unfair offers than those who inadvertently transferred their feelings of frustration (transfer condition). The effect of conditions on accept-reject decisions in the ultimatum bargaining was mediated by reported feelings of frustration.

  17. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  18. UAV PHOTOGRAMMETRY: BLOCK TRIANGULATION COMPARISONS

    Directory of Open Access Journals (Sweden)

    R. Gini

    2013-08-01

    Full Text Available UAVs systems represent a flexible technology able to collect a big amount of high resolution information, both for metric and interpretation uses. In the frame of experimental tests carried out at Dept. ICA of Politecnico di Milano to validate vector-sensor systems and to assess metric accuracies of images acquired by UAVs, a block of photos taken by a fixed wing system is triangulated with several software. The test field is a rural area included in an Italian Park ("Parco Adda Nord", useful to study flight and imagery performances on buildings, roads, cultivated and uncultivated vegetation. The UAV SenseFly, equipped with a camera Canon Ixus 220HS, flew autonomously over the area at a height of 130 m yielding a block of 49 images divided in 5 strips. Sixteen pre-signalized Ground Control Points, surveyed in the area through GPS (NRTK survey, allowed the referencing of the block and accuracy analyses. Approximate values for exterior orientation parameters (positions and attitudes were recorded by the flight control system. The block was processed with several software: Erdas-LPS, EyeDEA (Univ. of Parma, Agisoft Photoscan, Pix4UAV, in assisted or automatic way. Results comparisons are given in terms of differences among digital surface models, differences in orientation parameters and accuracies, when available. Moreover, image and ground point coordinates obtained by the various software were independently used as initial values in a comparative adjustment made by scientific in-house software, which can apply constraints to evaluate the effectiveness of different methods of point extraction and accuracies on ground check points.

  19. Silicon fertilization and soil water tensions on rice development and yield

    Directory of Open Access Journals (Sweden)

    Jakeline R. de Oliveira

    2016-02-01

    Full Text Available ABSTRACT The cultivation of upland rice (Oryza sativa in Brazil occurs mainly in the Cerrado, a region with adverse weather conditions. The use of silicon in its cultivation becomes important, since this nutrient provides higher rigidity, lower transpiration and higher resistance to dry spells in rice plants. The objective of the present study was to evaluate the effect of silicon fertilization and soil water tensions on upland rice development and yield in a Cerrado Oxisol. A 5 x 5 fractionated factorial with five soil water tensions (0, 15, 30, 45 and 60 kPa and five silicon doses (0, 120, 240, 480 and 960 mg dm-3 was used, which were distributed in a randomized block design, with four replicates. Plant height, number of tillers, number of panicles, number of grains per panicle, numbers of full and empty grains and percentage of empty grains were evaluated. Silicon fertilization promotes increased tillering in rice plants at the dose of 960 mg dm-3. The numbers of tillers and panicles decreased with the application of silicon up to the doses of 460 and 490 mg dm-3, respectively. The increase in soil water tensions reduced plant height and the number of full grains, and increased the percentage of empty grains of upland rice.

  20. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo

    2018-04-19

    Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

  1. Debug automation from pre-silicon to post-silicon

    CERN Document Server

    Dehbashi, Mehdi

    2015-01-01

    This book describes automated debugging approaches for the bugs and the faults which appear in different abstraction levels of a hardware system. The authors employ a transaction-based debug approach to systems at the transaction-level, asserting the correct relation of transactions. The automated debug approach for design bugs finds the potential fault candidates at RTL and gate-level of a circuit. Debug techniques for logic bugs and synchronization bugs are demonstrated, enabling readers to localize the most difficult bugs. Debug automation for electrical faults (delay faults)finds the potentially failing speedpaths in a circuit at gate-level. The various debug approaches described achieve high diagnosis accuracy and reduce the debugging time, shortening the IC development cycle and increasing the productivity of designers. Describes a unified framework for debug automation used at both pre-silicon and post-silicon stages; Provides approaches for debug automation of a hardware system at different levels of ...

  2. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Science.gov (United States)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  3. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  4. [THE TECHNOLOGY "CELL BLOCK" IN CYTOLOGICAL PRACTICE].

    Science.gov (United States)

    Volchenko, N N; Borisova, O V; Baranova, I B

    2015-08-01

    The article presents summary information concerning application of "cell block" technology in cytological practice. The possibilities of implementation of various modern techniques (immune cytochemnical analysis. FISH, CISH, polymerase chain reaction) with application of "cell block" method are demonstrated. The original results of study of "cell block" technology made with gelatin, AgarCyto and Shadon Cyoblock set are presented. The diagnostic effectiveness of "cell block" technology and common cytological smear and also immune cytochemical analysis on samples of "cell block" technology and fluid cytology were compared. Actually application of "cell block" technology is necessary for ensuring preservation of cell elements for subsequent immune cytochemical and molecular genetic analysis.

  5. Direct bandgap silicon: tensile-strained silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

    2014-01-01

    Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

  6. A general classification of silicon utilizing organisms

    Science.gov (United States)

    Das, P.; Das, S.

    2010-12-01

    Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

  7. Creep analysis of silicone for podiatry applications.

    Science.gov (United States)

    Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

    2016-10-01

    This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  8. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  9. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  10. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  11. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...... and still to realize Si-Si bonding. It has been demonstrated that ribbed silicon plates can be produced and assembled into stacks. All previously work has been done using uncoated Si plates. In this paper we describe how to coat the ribbed Si plates with an Ir coating and a top C coating through a mask so...

  12. Exceptional plasticity of silicon nanobridges

    Energy Technology Data Exchange (ETDEWEB)

    Ishida, Tadashi; Sato, Takaaki; Toshiyoshi, Hiroshi; Collard, Dominique; Fujita, Hiroyuki [University of Tokyo, Institute of Industrial Science, 4-6-1 Komaba Meguro, Tokyo 153-8505 (Japan); Cleri, Fabrizio [Institut d' Electronique Microelectronique et Nanotechnologie (CNRS UMR 8520), Universite de Lille I, Avenue Poincare BP60069 59652 Villeneuve d' Ascq (France); Kakushima, Kuniyuki [Tokyo Institute of Technology, 4259, Nagatsuda, Midori, Yokohama, Kanagawa 226-8502 (Japan); Mita, Makoto [Department of Spacecraft Engineering, Japan Aerospace Exploration Agency, 3-1-1, Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan); Miyata, Masaki; Itamura, Noriaki; Sasaki, Naruo [Department of Materials and Life Sciences, Seikei University, 3-3-1, Kitamachi, Kichijoji, Musashino, Tokyo 180-8633 (Japan); Endo, Junji, E-mail: tadashii@iis.u-tokyo.ac.jp [FK Optical laboratory, 1-13-4 Nakano Niiza Saitama, 352-0005 (Japan)

    2011-09-02

    The plasticity of covalently bonded materials is a subject at the forefront of materials science, bearing on a wide range of technological and fundamental aspects. However, covalent materials fracture in a brittle manner when the deformation exceeds just a few per cent. It is predicted that a macroscopically brittle material like silicon can show nanoscale plasticity. Here we report the exceptional plasticity observed in silicon nanocontacts ('nanobridges') at room temperature using a special experimental setup combining a transmission electron microscope and a microelectromechanical system. When accounting for surface diffusion, we succeeded in elongating the nanocontact into a wire-like structure, with a fivefold increase in volume, up to more than twenty times the original length. Such a large plasticity was caused by the stress-assisted diffusion and the sliding of the intergranular, amorphous-like material among the nanocrystals.

  13. UV blocking filters for polymeric films

    Science.gov (United States)

    Rayl, G. J.

    1979-01-01

    The concept of incorporating UV screening agents in silicone resins as a means of protecting underlying solar cell covers and adhesives from UV degradation is presented. A silicone hard-coat resin incorporating a UV screening agent was selected as a suitable coating material for PFA Teflon solar cell covers. Consideration is given to fabrication procedures and techniques for introduction of the UV screening agents into silicone resins and application of these UV-inhibited coatings to the Teflons. Some preliminary environmental tests, such as thermal shock and temperature humidity, were conducted.

  14. Physical tuning of cellulose-polymer interactions utilizing cationic block copolymers based on PCL and quaternized PDMAEMA.

    Science.gov (United States)

    Utsel, Simon; Bruce, Carl; Pettersson, Torbjörn; Fogelström, Linda; Carlmark, Anna; Malmström, Eva; Wågberg, Lars

    2012-12-01

    In this work, the objective was to synthesize and evaluate the properties of a compatibilizer based on poly(ε-caprolactone) aimed at tuning the surface properties of cellulose fibers used in fiber-reinforced biocomposites. The compatibilizer is an amphiphilic block copolymer consisting of two different blocks which have different functions. One block is cationic, quaternized poly(2-(dimethylamino)ethyl methacrylate) (PDMAEMA) and can therefore electrostatically attach to anionic reinforcing materials such as cellulose-based fibers/fibrils under mild conditions in water. The other block consists of poly(ε-caprolactone) (PCL) which can decrease the surface energy of a cellulose surface and also has the ability to form physical entanglements with a PCL surface thereby improving the interfacial adhesion. Atom Transfer Radical Polymerization (ATRP) and Ring-Opening Polymerization (ROP) were used to synthesize three block copolymers with the same length of the cationic PDMAEMA block but with different lengths of the PCL blocks. The block copolymers form cationic micelles in water which can adsorb to anionic surfaces such as silicon oxide and cellulose-model surfaces. After heat treatment, the contact angles of water on the treated surfaces increased significantly, and contact angles close to those of pure PCL were obtained for the block copolymers with longer PCL blocks. AFM force measurements showed a clear entangling behavior between the block copolymers and a PCL surface at about 60 °C, which is important for the formation of an adhesive interface in the final biocomposites. This demonstrates that this type of amphiphilic block copolymer can be used to improve interactions in biocomposites between anionic reinforcing materials such as cellulose-based fibers/fibrils and less polar matrices such as PCL.

  15. Blocking device especially for circulating pumps

    International Nuclear Information System (INIS)

    Susil, J.; Vychodil, V.; Lorenc, P.

    1976-01-01

    The claim of the invention is a blocking device which blocks reverse flow occurring after the shutdown of circulating pumps, namely in the operation of nuclear power plants or in pumps with a high delivery head. (F.M.)

  16. Demographic Data - MDC_BlockGroup

    Data.gov (United States)

    NSGIC Local Govt | GIS Inventory — A polygon feature class of Miami-Dade County Census 2000 Block Groups. A census Block Group is a statistical subdivision of a census Tract consisting of a cluster of...

  17. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  18. Laser ablation of silicone composites

    OpenAIRE

    Hosier, I. L.; Abd Rahman, M. S.; Vaughan, A. S.; Krivda, A.; Kommann, X; Schmidt, L E

    2011-01-01

    Silicone rubber based composites are used widely for outdoor high voltage components such as bushings, cable strings and as weather resistant coatings. In adverse weather conditions, dry band discharges [1] can occur resulting in tracking and surface damage; this can ultimately result in dielectric or mechanical failure. Traditionally these components are filled with aluminium trihydrate (ATH) and other fillers, such as silica, to improve their tracking resistance and erosion performance [2]....

  19. Nanocrystalline silicon in biological studies

    Czech Academy of Sciences Publication Activity Database

    Fučíková, A.; Valenta, J.; Pelant, Ivan; Kůsová, Kateřina; Březina, Vítězslav

    2011-01-01

    Roč. 8, č. 3 (2011), s. 1093-1096 ISSN 1862-6351 R&D Projects: GA AV ČR KAN400100701; GA AV ČR(CZ) IAA101120804; GA MŠk LC510; GA ČR GD202/09/H041 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z60870520 Keywords : nanocrystalline * silicon * biocompatibility * quantum dot * fluorescence label Subject RIV: BM - Solid Matter Physics ; Magnetism

  20. Silicon chemistry in interstellar clouds

    International Nuclear Information System (INIS)

    Langer, W.D.; Glassgold, A.E.

    1989-05-01

    Interstellar SiO was discovered shortly after CO but it has been detected mainly in high density and high temperature regions associated with outflow sources. A new model of interstellar silicon chemistry that explains the lack of SiO detections in cold clouds is presented which contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine structure levels of the silicon atom. This effect was originally pointed out in the context of neutral reactions of carbon and oxygen by Graff, who noted that the leading term in neutral atom-molecule interactions involves the quadrupole moment of the atom. Similar to the case of carbon, the requirement that Si has a quadrupole moment requires population of the J = 1 level, which lies 111K above the J = 0 ground state and has a critical density n(cr) equal to or greater than 10(6)/cu cm. The SiO abundance then has a temperature dependence proportional to exp(-111/T) and a quadratic density dependence for n less than n(cr). As part of the explanation of the lack of SiO detections at low temperatures and densities, this model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundances of oxygen bearing molecules and the depletion of interstellar silicon

  1. Optical gain in silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Pelant, Ivan

    2011-01-01

    Roč. 208, č. 3 (2011), s. 625-630 ISSN 1862-6300 R&D Projects: GA AV ČR KAN400100701; GA AV ČR(CZ) IAA101120804; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : experimental approach * luminescence * nanocrystals * optical gain * silicon Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.463, year: 2011

  2. The ALICE Silicon Pixel Detector

    International Nuclear Information System (INIS)

    Kluge, A.; Rinella, G. Aglieri; Anelli, G.; Antinori, F.; Badala, A.; Burns, M.; Cali, I.A.; Campbell, M.; Caselle, M.; Ceresa, S.; Chochula, P.; Dima, R.; Elias, D.; Fabris, D.; Fini, R.A.; Formenti, F.; Krivda, M.; Lenti, V.; Librizzi, F.; Manzari, V.

    2007-01-01

    The ALICE Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE inner tracker system. It contains 9.8x10 6 pixels with a material budget of less than 1% of X 0 per layer. It is based on hybrid pixel technology. The space and material budget constraints have severe impact on the design. The ALICE SPD detector system components are discussed

  3. Muon decay channeling in silicon

    International Nuclear Information System (INIS)

    Bosshard, A.; Patterson, B.D.; Straumann, U.; Truoel, P.; Wichert, Th.

    1984-01-01

    This experiment employs the channeling effect of the host lattice on the trajectories of decay positrons in order to determine the position of positive muons implanted into silicon crystals. Low-momentum ( 0 ). In order to achieve sufficient angular resolution, the Si wafer is bent to a spherical shape, thereby focussing a particular crystal axis to a point at the center of the MWPC (located 3.4 m from the wafer). (Auth.)

  4. Purity of silicon: with great effect on its performance in graphite-silicon anode materials for lithium-ion batteries

    Science.gov (United States)

    Jin, Chenxin; Xu, Guojun; Liu, Liekai; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Tang, Hao; Huang, Haibin; Zhou, Lang

    2017-09-01

    Ferrosilicon, industrial grade silicon, solar grade silicon, and electronic grade silicon were ball-milled to form four types of silicon powders, which were mixed with graphite powders at weight ratio of 5:95, respectively, for being used as graphite-silicon anode materials in lithium-ion batteries (LIBs). The effect of the purity of silicon on its electrochemical performance in graphite-silicon anode materials for LIBs was investigated by the cycle and rate tests. Results show that silicon with higher purity shows higher capacity, better cycle, and rate performance. In addition, the significant difference in capacity of the four graphite-silicon anodes with different purities of silicon is not completely resulted from the content of silicon materials, and the influence of the impurity inside the silicon cannot be ignored as well. The sample prepared from electronic grade silicon presents the highest first discharge capacity, which is 440.5 mAh g-1.

  5. Shock Response of Silicon Nitride

    Science.gov (United States)

    Dandekar, D. P.; Casem, D. T.; Motoyashiki, Y.; Sato, E.

    2009-06-01

    Silicon nitride is suitable for varied applications. The properties of silicon nitride have been tailored through processing and doping. The current work presents shock response of silicon nitride marketed as SN282. The density of this material, 3.4 Mg/m^3, exceeds its single crystal density due to the presence of lutetium oxide as an additive in ca. 5% by weight in the material. While the average grain size is 3.4 microns, aspect ratio of the grains exceed 3. Preliminary results of shock wave experiments may be summarized as follows: (1) The Hugoniot Elastic Limit (HEL) of SN282 is 11.2 GPa. (2) The magnitude of the inelastic wave velocity just above the HEL is 8.73 km/s, suggesting that inelastic deformation above the HEL is due to shock induced plasticity in the material. (3) The estimated value of the spall strength is 0.5 GPa. The spall strength of SN282 remains unchanged even when shocked beyond the HEL. The non-vanishing spall strength suggests that doping plays a role in the retention of spall strength of SN282. The role of doping needs to be further investigated.

  6. Zirconia doped silicon nitride ceramics

    International Nuclear Information System (INIS)

    Ekstroem, T.; Falk, L.K.L.; Knutson-Wedel, E.M.

    1992-01-01

    This presentation is concerned with the value added to silicon nitride ceramics by doping with smaller amounts of zirconia. The effects which the different sintering additives ZrO 2 , Y 2 O 3 stabilized ZrO 2 , Y 2 O 3 , Al 2 O 3 and AIN have upon densification, α- to β-Si 3 N 4 phase transformation and final microstructure are discussed. Silicon nitride ceramics containing these additives have been formed either by pressureless sintering or by hot isostatic pressing (HIP) at temperatures in the range 1550 to 1775 deg C. The fine scale microstructures of the densified materials, characterized by analytical electron microscopy and X-ray diffractometry, have been related to mechanical properties viz. strength, hardness and indentation fracture toughness. The most pronounced value added by ZrO 2 doping is that a properly adjusted combination of sintering aids makes it possible to substantially reduce the volume fraction of residual intergranular glass through formation of crystalline ZrO 2 (Y 2 O 3 ) solid solutions. This behaviours opens the possibility of developing new silicon nitride ceramics for high temperature applications. 25 refs., 4 figs

  7. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  8. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  9. Silicon in the Earth's core.

    Science.gov (United States)

    Georg, R Bastian; Halliday, Alex N; Schauble, Edwin A; Reynolds, Ben C

    2007-06-28

    Small isotopic differences between the silicate minerals in planets may have developed as a result of processes associated with core formation, or from evaporative losses during accretion as the planets were built up. Basalts from the Earth and the Moon do indeed appear to have iron isotopic compositions that are slightly heavy relative to those from Mars, Vesta and primitive undifferentiated meteorites (chondrites). Explanations for these differences have included evaporation during the 'giant impact' that created the Moon (when a Mars-sized body collided with the young Earth). However, lithium and magnesium, lighter elements with comparable volatility, reveal no such differences, rendering evaporation unlikely as an explanation. Here we show that the silicon isotopic compositions of basaltic rocks from the Earth and the Moon are also distinctly heavy. A likely cause is that silicon is one of the light elements in the Earth's core. We show that both the direction and magnitude of the silicon isotopic effect are in accord with current theory based on the stiffness of bonding in metal and silicate. The similar isotopic composition of the bulk silicate Earth and the Moon is consistent with the recent proposal that there was large-scale isotopic equilibration during the giant impact. We conclude that Si was already incorporated as a light element in the Earth's core before the Moon formed.

  10. Studies of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, S G; Carlos, W E

    1984-07-01

    This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded a ration of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus-doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon. In a-SiC:H films, a strong resonance was attributed to dangling bonds on carbon atoms. ESR measurements on low-pressure chemical-vapor-deposited (LPCVD) a-Si:H were performed on samples. The defect density in the bulk of the films was 10/sup 17//cc with a factor of 3 increase at the surface of the sample. The ESR spectrum of LPCVD-prepared films was not affected by prolonged exposure to strong light. Microcrystalline silicon samples were also examined. The phosphorus-doped films showed a strong signal from the crystalline material and no resonance from the amorphous matrix. This shows that phosphorus is incorporated in the crystals and is active as a dopant. No signal was recorded from the boron-doped films.

  11. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  12. Silicon spintronics: Progress and challenges

    Science.gov (United States)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-07-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  13. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  14. Silicon nanostructures in silicon oxynitride for PV application: effect of argon

    Energy Technology Data Exchange (ETDEWEB)

    Ehrhardt, Fabien; Ferblantier, Gerald; Muller, Dominique; Slaoui, Abdelilah [Institut d' Electronique du Solide et des Systemes, UMR CNRS-UdS 7163, 23 Rue du Loess, BP20, 67034 Strasbourg cedex 2 (France); Ulhaq-Bouillet, Corinne [Institut de Physique et Chimie des Materiaux de Strasbourg, UMR CNRS-UdS 7504, 23 Rue du Loess, BP43, 67034 Strasbourg cedex 2 (France)

    2012-10-15

    Silicon rich silicon oxynitride (SRSON) were deposited by ECR-PECVD to form silicon nanostructures. The effect of argon flow during the deposition was investigated. The silicon nanoparticles were fabricated by a classical thermal treatment of SRSON films. The structural properties of the SRSON films were investigated by RBS and FTIR measurements. We show that the silicon excess in the SiO{sub x}N{sub y} matrix changes slightly with Ar flow but it has a significant impact on the silicon nanoparticles morphology embedded in the silicon oxynitride layer. Different shapes for silicon nanostructures ranging from separated Si nanocrystals to Si nanocolumns were formed as studied by energy-filtred transmission electron microscopy analysis (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  16. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  17. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  18. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  19. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  20. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...... by a classical Drude–Smith model, suitable for disorder-driven metal–insulator transitions. In this work, we explore the time evolution of the frequency dependent complex conductivity after optical injection of carriers on a picosecond time scale. Furthermore, we show the lifetime of photoconductivity...

  1. Used, Blocking and Sleeping Patents

    DEFF Research Database (Denmark)

    Torrisi, Salvatore; Gambardella, Alfonso; Giuri, Paola

    2016-01-01

    patents are being utilized. A substantial share of patents is neither used internally nor for market transactions, which confirms the importance of strategic patenting and inefficiency in the management of intellectual property. We investigate different types of unused patents—unused blocking patents...... and sleeping patents. We also examine the association between used and unused patents and their characteristics such as family size, scope, generality and overlapping claims, technology area, type of applicant, and the competitive environment from where these patents originate. We discuss our results...

  2. Large block test status report

    International Nuclear Information System (INIS)

    Wilder, D.G.; Lin, W.; Blair, S.C.

    1997-01-01

    This report is intended to serve as a status report, which essentially transmits the data that have been collected to date on the Large Block Test (LBT). The analyses of data will be performed during FY98, and then a complete report will be prepared. This status report includes introductory material that is not needed merely to transmit data but is available at this time and therefore included. As such, this status report will serve as the template for the future report, and the information is thus preserved

  3. Design of polarization-insensitive 2 × 2 multimode interference coupler based on double strip silicon nitride waveguides

    Science.gov (United States)

    Yang, Huimin; Zheng, Pengfei; Liu, Panpan; Hu, Guohua; Yun, Binfeng; Cui, Yiping

    2018-03-01

    A polarization-insensitive 2 × 2 multimode interference coupler based on double strip silicon nitride waveguides is proposed and optimized by using the three-dimensional finite difference time domain method. By optimizing the device's structure parameters in detail, polarization independent excess loss of -0.32dB is obtained, and negligible output uniformities of -0.02dB and -0.03dB could be achieved for the TE and TM mode, respectively. The optimized polarization-insensitive 2 × 2 multimode interference coupler could be served as a building block on the double strip silicon nitride waveguides platform.

  4. Micellization and Dynamics of a Block Copolymer

    DEFF Research Database (Denmark)

    Hvidt, Søren

    2006-01-01

    Triblock copolymers of the type EPE, where E and P denote ethylene oxide and propylene oxide blocks, respectively, are industrially important copolymers often called Pluronics or Poloxamers. EPE copolymers form micelles with a core of P blocks and different micellar shapes depending on block leng...

  5. 31 CFR 515.319 - Blocked account.

    Science.gov (United States)

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account. 515.319 Section 515... § 515.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals or other...

  6. 31 CFR 500.319 - Blocked account.

    Science.gov (United States)

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account. 500.319 Section 500... § 500.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals of other...

  7. Bullet-Block Science Video Puzzle

    Science.gov (United States)

    Shakur, Asif

    2015-01-01

    A science video blog, which has gone viral, shows a wooden block shot by a vertically aimed rifle. The video shows that the block hit dead center goes exactly as high as the one shot off-center. (Fig. 1). The puzzle is that the block shot off-center carries rotational kinetic energy in addition to the gravitational potential energy. This leads a…

  8. 21 CFR 882.5070 - Bite block.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Bite block. 882.5070 Section 882.5070 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES NEUROLOGICAL DEVICES Neurological Therapeutic Devices § 882.5070 Bite block. (a) Identification. A bite block...

  9. Silicon-Carbide (SIC) Multichip Power Modules (MCPMS) For Power Building Block Applications, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I, APEI, Inc. proved the feasibility of developing a modular, expandable and fault tolerant SiC-based power system through the successful demonstration of a...

  10. Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

    OpenAIRE

    Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

    2009-01-01

    Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

  11. Identification of a Mammalian Silicon Transporter

    OpenAIRE

    Ratcliffe, Sarah; Jugdaohsingh, Ravin; Ma, Jian Feng; Mitani-Ueno, Nakimi; Vivancos, Julien; Deshmukh, Rupesh; Boekschoten, Mark; Muller, Michael; Mawhinney, Robert; Marron, Alan; Isenring, Paul; Kinrade, Stephen; Bélanger, Richard; Powell, Jonathan

    2017-01-01

    Silicon (Si) has long been known to play a major physiological role in certain organisms, including some sponges and many diatoms and higher plants, leading to the recent identification of multiple proteins responsible for silicon transport in a range of algal and plant species. In mammals, despite several convincing studies suggesting that silicon is an important factor in bone development and connective tissue health, there is a critical lack of understanding in biochemical pathways that en...

  12. Aquaporins Mediate Silicon Transport in Humans

    OpenAIRE

    Garneau, Alexandre P.; Carpentier, Gabriel A.; Marcoux, Andr?e-Anne; Frenette-Cotton, Rachelle; Simard, Charles F.; R?mus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mari?ve; No?l, Micheline; Powell, Jonathan J.; B?langer, Richard; C?t?, Fran?ois; Isenring, Paul

    2015-01-01

    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 a...

  13. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  14. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  15. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  16. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    OpenAIRE

    Schriver, Maria Christine

    2012-01-01

    A novel solar cell architecture made completely from the earth abundant elements silicon and carbon has been developed. Hydrogenated amorphous silicon (aSi:H), rather than crystalline silicon, is used as the active material due to its high absorption through a direct band gap of 1.7eV, well matched to the solar spectrum to ensure the possibility of improved cells in this architecture with higher efficiencies. The cells employ a Schottky barrier design wherein the amorphous silicon absorber la...

  17. Diffusivity in silicon 1953 to 2009

    CERN Document Server

    Fisher, David J

    2010-01-01

    This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharma's monograph on 'Diffusion in Semiconductors' (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retro

  18. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  19. Porous silicon investigated by positron annihilation

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.

    1989-01-01

    The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

  20. Process for Polycrystalline film silicon growth

    Science.gov (United States)

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  1. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  2. Isostatic compression of buffer blocks. Middle scale

    International Nuclear Information System (INIS)

    Ritola, J.; Pyy, E.

    2012-01-01

    Manufacturing of buffer components using isostatic compression method has been studied in small scale in 2008 (Laaksonen 2010). These tests included manufacturing of buffer blocks using different bentonite materials and different compression pressures. Isostatic mould technology was also tested, along with different methods to fill the mould, such as vibration and partial vacuum, as well as a stepwise compression of the blocks. The development of manufacturing techniques has continued with small-scale (30 %) blocks (diameter 600 mm) in 2009. This was done in a separate project: Isostatic compression, manufacturing and testing of small scale (D = 600 mm) buffer blocks. The research on the isostatic compression method continued in 2010 in a project aimed to test and examine the isostatic manufacturing process of buffer blocks at 70 % scale (block diameter 1200 to 1300 mm), and the aim was to continue in 2011 with full-scale blocks (diameter 1700 mm). A total of nine bentonite blocks were manufactured at 70 % scale, of which four were ring-shaped and the rest were cylindrical. It is currently not possible to manufacture full-scale blocks, because there is no sufficiently large isostatic press available. However, such a compression unit is expected to be possible to use in the near future. The test results of bentonite blocks, produced with an isostatic pressing method at different presses and at different sizes, suggest that the technical characteristics, for example bulk density and strength values, are somewhat independent of the size of the block, and that the blocks have fairly homogenous characteristics. Water content and compression pressure are the two most important properties determining the characteristics of the compressed blocks. By adjusting these two properties it is fairly easy to produce blocks at a desired density. The commonly used compression pressure in the manufacturing of bentonite blocks is 100 MPa, which compresses bentonite to approximately

  3. Coastal protection using topological interlocking blocks

    Science.gov (United States)

    Pasternak, Elena; Dyskin, Arcady; Pattiaratchi, Charitha; Pelinovsky, Efim

    2013-04-01

    The coastal protection systems mainly rely on the self-weight of armour blocks to ensure its stability. We propose a system of interlocking armour blocks, which form plate-shape assemblies. The shape and the position of the blocks are chosen in such a way as to impose kinematic constraints that prevent the blocks from being removed from the assembly. The topological interlocking shapes include simple convex blocks such as platonic solids, the most practical being tetrahedra, cubes and octahedra. Another class of topological interlocking blocks is so-called osteomorphic blocks, which form plate-like assemblies tolerant to random block removal (almost 25% of blocks need to be removed for the assembly to loose integrity). Both classes require peripheral constraint, which can be provided either by the weight of the blocks or post-tensioned internal cables. The interlocking assemblies provide increased stability because lifting one block involves lifting (and bending) the whole assembly. We model the effect of interlocking by introducing an equivalent additional self-weight of the armour blocks. This additional self-weight is proportional to the critical pressure needed to cause bending of the interlocking assembly when it loses stability. Using beam approximation we find an equivalent stability coefficient for interlocking. It is found to be greater than the stability coefficient of a structure with similar blocks without interlocking. In the case when the peripheral constraint is provided by the weight of the blocks and for the slope angle of 45o, the effective stability coefficient for a structure of 100 blocks is 33% higher than the one for a similar structure without interlocking. Further increase in the stability coefficient can be reached by a specially constructed peripheral constraint system, for instance by using post-tension cables.

  4. Isostatic compression of buffer blocks. Middle scale

    Energy Technology Data Exchange (ETDEWEB)

    Ritola, J.; Pyy, E. [VTT Technical Research Centre of Finland, Espoo (Finland)

    2012-01-15

    Manufacturing of buffer components using isostatic compression method has been studied in small scale in 2008 (Laaksonen 2010). These tests included manufacturing of buffer blocks using different bentonite materials and different compression pressures. Isostatic mould technology was also tested, along with different methods to fill the mould, such as vibration and partial vacuum, as well as a stepwise compression of the blocks. The development of manufacturing techniques has continued with small-scale (30 %) blocks (diameter 600 mm) in 2009. This was done in a separate project: Isostatic compression, manufacturing and testing of small scale (D = 600 mm) buffer blocks. The research on the isostatic compression method continued in 2010 in a project aimed to test and examine the isostatic manufacturing process of buffer blocks at 70 % scale (block diameter 1200 to 1300 mm), and the aim was to continue in 2011 with full-scale blocks (diameter 1700 mm). A total of nine bentonite blocks were manufactured at 70 % scale, of which four were ring-shaped and the rest were cylindrical. It is currently not possible to manufacture full-scale blocks, because there is no sufficiently large isostatic press available. However, such a compression unit is expected to be possible to use in the near future. The test results of bentonite blocks, produced with an isostatic pressing method at different presses and at different sizes, suggest that the technical characteristics, for example bulk density and strength values, are somewhat independent of the size of the block, and that the blocks have fairly homogenous characteristics. Water content and compression pressure are the two most important properties determining the characteristics of the compressed blocks. By adjusting these two properties it is fairly easy to produce blocks at a desired density. The commonly used compression pressure in the manufacturing of bentonite blocks is 100 MPa, which compresses bentonite to approximately

  5. Randomized Block Cubic Newton Method

    KAUST Repository

    Doikov, Nikita

    2018-02-12

    We study the problem of minimizing the sum of three convex functions: a differentiable, twice-differentiable and a non-smooth term in a high dimensional setting. To this effect we propose and analyze a randomized block cubic Newton (RBCN) method, which in each iteration builds a model of the objective function formed as the sum of the natural models of its three components: a linear model with a quadratic regularizer for the differentiable term, a quadratic model with a cubic regularizer for the twice differentiable term, and perfect (proximal) model for the nonsmooth term. Our method in each iteration minimizes the model over a random subset of blocks of the search variable. RBCN is the first algorithm with these properties, generalizing several existing methods, matching the best known bounds in all special cases. We establish ${\\\\cal O}(1/\\\\epsilon)$, ${\\\\cal O}(1/\\\\sqrt{\\\\epsilon})$ and ${\\\\cal O}(\\\\log (1/\\\\epsilon))$ rates under different assumptions on the component functions. Lastly, we show numerically that our method outperforms the state-of-the-art on a variety of machine learning problems, including cubically regularized least-squares, logistic regression with constraints, and Poisson regression.

  6. Characterization using ion beam analysis of In(Ga)As quantum dots grown by epitaxy on silicon

    International Nuclear Information System (INIS)

    Pelloux-Gervais, D.

    2012-01-01

    The integration on silicon of direct band gap materials such as some semiconductors from the III-V group is of a rising interest for tomorrow's optoelectronic devices. Although silicon is the raw material for many microelectronic devices, it has a poor light emitting efficiency due to his indirect band gap. Among the III-V family, the In(Ga)As compounds present the advantage of a smaller band gap than silicon, which encourage the confinement of electron-hole pairs. However, the large lattice mismatch between silicon and In(Ga)As is a serious limitation for the epitaxial integration. This PhD work has been focused on the ion beam study of In(Ga)As quantum dots (QDs) grown by epitaxy on silicon and of the QD capping by silicon. Rutherford Backscattering Spectrometry (RBS) has been used to quantify composition of both QDs and cap layer. Exo-diffusion and excess issues of some elements have been pointed out. The epitaxial relation between QDs and substrate have been investigated by ion channelling (RBS-C). Medium Energy Ion Scattering (MEIS) has also been used to obtain high resolution profiles of composition, defects and strain for both the QD plane and the capping layer. Direct space mapping of both crystals has also been achieved by MEIS thanks to the blocking effect. (author)

  7. Reduced thermal conductivity of isotopically modulated silicon multilayer structures

    DEFF Research Database (Denmark)

    Bracht, H.; Wehmeier, N.; Eon, S.

    2012-01-01

    We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time-res...... be effectively reduced with isotopically modulated structures. This offers a promising approach to optimize silicon for thermoelectric applications.......We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

  8. A Digitalized Silicon Microgyroscope Based on Embedded FPGA

    Science.gov (United States)

    Xia, Dunzhu; Yu, Cheng; Wang, Yuliang

    2012-01-01

    This paper presents a novel digital miniaturization method for a prototype silicon micro-gyroscope (SMG) with the symmetrical and decoupled structure. The schematic blocks of the overall system consist of high precision analog front-end interface, high-speed 18-bit analog to digital convertor, a high-performance core Field Programmable Gate Array (FPGA) chip and other peripherals such as high-speed serial ports for transmitting data. In drive mode, the closed-loop drive circuit are implemented by automatic gain control (AGC) loop and software phase-locked loop (SPLL) based on the Coordinated Rotation Digital Computer (CORDIC) algorithm. Meanwhile, the sense demodulation module based on varying step least mean square demodulation (LMSD) are addressed in detail. All kinds of algorithms are simulated by Simulink and DSPbuilder tools, which is in good agreement with the theoretical design. The experimental results have fully demonstrated the stability and flexibility of the system. PMID:23201990

  9. ALS insertion device block measurement and inspection

    International Nuclear Information System (INIS)

    Marks, S.; Carrieri, J.; Cook, C.; Hassenzahl, W.V.; Hoyer, E.; Plate, D.

    1991-05-01

    The performance specifications for ALS insertion devices require detailed knowledge and strict control of the Nd-Fe-B permanent magnet blocks incorporated in these devices. This paper describes the measurement and inspection apparatus and the procedures designed to qualify and characterize these blocks. A detailed description of a new, automated Helmholtz coil facility for measurement of the three components of magnetic moment is included. Physical block inspection and magnetic moment measurement procedures are described. Together they provide a basis for qualifying blocks and for specifying placement of blocks within an insertion devices' magnetic structures. 1 ref., 4 figs

  10. Adaptive motion compensation without blocking artifacts

    Science.gov (United States)

    Terriberry, Timothy B.

    2015-03-01

    The Block Matching Algorithms used in most popular video codec standards introduce blocking artifacts which must be removed via residual coding or deblocking filters. Alternative transform stages that do not cause blocking artifacts, such as lapped transforms or wavelets, require motion compensation methods that do not produce blocking artifacts, since they are expensive to remove. We design a new Overlapped Block Motion Compensation (OBMC) scheme that avoids these artifacts while allowing adaptive blending window sizes. This has the potential to show significant visual quality improvements over traditional OBMC.

  11. Diffusion of surface-active amphiphiles in silicone-based fouling-release coatings

    DEFF Research Database (Denmark)

    Noguer, Albert Camós; Olsen, S. M.; Hvilsted, Søren

    2017-01-01

    Amphiphiles (i.e. amphiphilic molecules such as surfactants, block copolymers and similar compounds) are used in small amounts to modify the surface properties of polymeric materials. In silicone fouling-release coatings, PEG-based amphiphiles are added to provide biofouling-resistance. The success...... of the amphiphiles shows a weak dependency on their molecular weight, although this dependency is much less pronounced than for other rubbery polymeric materials. The biofouling-resistance properties in fouling-release coatings were also studied for these amphiphiles. It was found that the diffusion coefficient does...... not have any influence on the biofouling-resistance results for the studied compounds. Instead, the chemistry of the hydrophobic block of the amphiphiles is much more significant, with PEG-PDMS block copolymers showing the best properties among the studied compounds....

  12. Misgivings about the Matching Familiar Figures Test: A Brief Reply to Block, Gjerde, and Block (1986).

    Science.gov (United States)

    Kagan, Jerome

    1987-01-01

    Reply by Jerome Kagan to a recent article by Block, Gjerde, and Block (1986) which questions the validity of the construct of reflection-impulsivity. Kagan alleges flaws in the logic of the authors' (Block, Gjerde, Block) position and in the inferences drawn from their data. (Author/RWB)

  13. 31 CFR 544.204 - Expenses of maintaining blocked physical property; liquidation of blocked property.

    Science.gov (United States)

    2010-07-01

    ... physical property; liquidation of blocked property. 544.204 Section 544.204 Money and Finance: Treasury... maintaining blocked physical property; liquidation of blocked property. (a) Except as otherwise authorized..., all expenses incident to the maintenance of physical property blocked pursuant to § 544.201(a) shall...

  14. 31 CFR 547.204 - Expenses of maintaining blocked physical property; liquidation of blocked property.

    Science.gov (United States)

    2010-07-01

    ... physical property; liquidation of blocked property. 547.204 Section 547.204 Money and Finance: Treasury... maintaining blocked physical property; liquidation of blocked property. (a) Except as otherwise authorized..., all expenses incident to the maintenance of physical property blocked pursuant to § 547.201(a) shall...

  15. 31 CFR 593.204 - Expenses of maintaining blocked physical property; liquidation of blocked account.

    Science.gov (United States)

    2010-07-01

    ... physical property; liquidation of blocked account. 593.204 Section 593.204 Money and Finance: Treasury... maintaining blocked physical property; liquidation of blocked account. (a) Except as otherwise authorized, and... to the maintenance of physical property blocked pursuant to § 593.201(a) shall be the responsibility...

  16. 31 CFR 587.205 - Expenses of maintaining blocked property; liquidation of blocked account.

    Science.gov (United States)

    2010-07-01

    ... property; liquidation of blocked account. 587.205 Section 587.205 Money and Finance: Treasury Regulations....205 Expenses of maintaining blocked property; liquidation of blocked account. (a) Except as otherwise... standard time, January 19, 2001, all expenses incident to the maintenance of physical property blocked...

  17. TOPICAL REVIEW: Nanoscale transport properties at silicon carbide interfaces

    Science.gov (United States)

    Roccaforte, F.; Giannazzo, F.; Raineri, V.

    2010-06-01

    Wide bandgap semiconductors promise devices with performances not achievable using silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency required in modern society. In spite of the significant progress achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices' performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at the nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices' building blocks. The selected topics include the major concerns related to the electronic transport at metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

  18. The Silicon Tracking System of the CBM experiment at FAIR

    Directory of Open Access Journals (Sweden)

    Teklishyn Maksym

    2018-01-01

    Full Text Available The Silicon Tracking System (STS is the central detector in the Compressed Baryonic Matter (CBM experiment at FAIR. Operating in the 1Tm dipole magnetic field, the STS will enable pile-up free detection and momentum measurement of the charged particles originating from beam-target nuclear interactions at rates up to 10 MHz. The STS consists of 8 tracking stations based on double-sided silicon micro-strip sensors equipped with fast, self-triggering read-out electronics. With about two million read-out channels, the STS will deliver a high-rate stream of time-stamped data that is transferred to a computing farm for on-line event determination and analysis. The functional building block is a detector module consisting of a sensor, micro-cables and two front-end electronics boards. In this contribution, the development status of the STS components and the system integration is discussed and an outlook on the detector construction is given.

  19. Fatigue in a heat treatable high silicon containing aluminium alloy

    Science.gov (United States)

    González, J. A.; Talamantes-Silva, J.; Valtierra, S.; Colás, Rafael

    2017-05-01

    The use of cast aluminium alloys in automobiles contributes to reductions in weight and fuel consumption without impairing the safety for the occupants or the performance of the car. Most of the alloys used are heat treatable hypoeutectic Al-Si alloys, which have the drawback of exhibiting low wear resistance. So industry relies in wear resistant alloys, such as grey iron, for the liners of the combustion chambers in engine blocks, which increase the weight of the engine. Therefore, it is of interest to cast high silicon containing alloys into engine components that are able to resist wear while maintaining the mechanical properties required by the components. This work presents the result of the work carried out in a high silicon containing heat treatable aluminium alloy as it is subjected to high cycle fatigue. The alloy was prepared and cast in ingots designed to promote one dimensional solidification gradient to obtain samples to study the high cycle fatigue. The material was machined into hour-glass specimens that were tested at room temperature in a servohydraulic machine under load control following the stair case method. The results show that the resistance to fatigue depends on the microstructure of the sample, as the fatigue cracks originate in pores close to the surface of the sample and propagate through the eutectic aggregate. The results from this work are compared with those from previously obtained with hypoeutectic alloys.

  20. Origami silicon optoelectronics for hemispherical electronic eye systems.

    Science.gov (United States)

    Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang

    2017-11-24

    Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

  1. A sharp recovery condition for block sparse signals by block orthogonal multi-matching pursuit

    OpenAIRE

    Chen, Wengu; Ge, Huanmin

    2016-01-01

    We consider the block orthogonal multi-matching pursuit (BOMMP) algorithm for the recovery of block sparse signals. A sharp bound is obtained for the exact reconstruction of block $K$-sparse signals via the BOMMP algorithm in the noiseless case, based on the block restricted isometry constant (block-RIC). Moreover, we show that the sharp bound combining with an extra condition on the minimum $\\ell_2$ norm of nonzero blocks of block $K-$sparse signals is sufficient to recover the true support ...

  2. Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

    Science.gov (United States)

    Chien-Jen Yang, Terry; Nomoto, Keita; Puthen-Veettil, Binesh; Lin, Ziyun; Wu, Lingfeng; Zhang, Tian; Jia, Xuguang; Conibeer, Gavin; Perez-Wurfl, Ivan

    2017-07-01

    Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

  3. Long-term outcomes of type I thyroplasty with silicone implantation: Assessment of excised laryngeal tissue from a patient with secondary hypopharyngeal carcinoma.

    Science.gov (United States)

    Adachi, Kazuo; Umezaki, Toshiro; Nishijima, Toshimitsu; Yamamoto, Hidetaka; Oda, Yoshinao

    2017-04-01

    Here we describe the long-term outcomes of type I thyroplasty (TP-I) with silicone block implantation through histopathological assessments in a male patient who underwent pharyngolaryngectomy for secondary hypopharyngeal carcinoma 7 years after silicone implantation. A 66-year-old man presented with esophageal carcinoma and underwent subtotal esophagotomy. Subsequently, his left vocal fold exhibited fixation in a paramedian position, and he underwent TP-I with silicone block implantation 2 years after the primary esophageal surgery. His voice quality improved; however, he developed glottic carcinoma in the right vocal fold 6 months after TP-I and underwent laser cordectomy. Glottic carcinoma recurred 21 months later, and he underwent laser cordectomy again. Five years after the second laser surgery, he underwent pharyngolaryngectomy and neck dissection for hypopharyngeal carcinoma detected in the right pyriform sinus. We histopathologically examined a horizontal section of the resected larynx to assess silicone implant-related changes. Although migration of the silicone implant was not observed, a very mild foreign body reaction occurred around the implant. The patient is currently in remission. Our findings suggest that silicone implants are suitable for TP-I due to their remarkable affinity for human tissue and the low risk of a tissue reaction. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  4. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  5. Retrolaminar Migration of Intraocular Silicone Oil.

    Science.gov (United States)

    Boren, Rance A; Cloy, Carson D; Gupta, Ankur S; Dewan, Vinay N; Hogan, R Nick

    2016-12-01

    Migration of intravitreal silicone to the retrolaminar optic nerve was detected pathologically in 1983, symptomatic migration to the subarachnoid space of the optic nerve was reported in 1994, and asymptomatic intraventricular silicone was first seen radiographically in 1999. Since then, little advance has been made in understanding this phenomenon despite numerous case reports. Although some authors have restricted their attention to cases of intraventricular silicone, we believe that these represent part of a clinical spectrum and that all cases with retrolaminar silicone should be considered. The pathophysiology of silicone migration may have significant implications for the management of patients after vitrectomy. Two patients were evaluated by the authors. An internet-based literature review was conducted, beginning with the key search terms "intraventricular, intracranial, subarachnoid, or optic nerve silicone," and "complications of vitrectomy or intravitreal silicone." Further searches cascaded from the initial search results. An additional 24 cases of retrolaminar migration of silicone oil were found and summarized. The relevant anatomy and pathophysiology were reviewed, with attention to additional information from enucleation studies, as well as to gaps in the current understanding of this process. Retrolaminar migration of silicone oil may be more common than previously thought, especially in at-risk patient groups, and may be associated with visual and neurologic symptoms. Some impressions regarding the cause and significance of this syndrome seem incorrect. Although this process is likely linked to postoperative elevations of intraocular pressure, the exact mechanisms of silicone entry into the subarachnoid space remain undefined. A number of anatomic factors may influence the movement of silicone from the orbit and in the various compartments of the subarachnoid space and ventricular system, resulting in variability of clinical presentations and

  6. The STAR silicon vertex tracker: a large area silicon drift detector

    CERN Document Server

    Lynn, D; Beuttenmüller, Rolf H; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Elliot, D; Eremin, V; Grau, M; Hoffmann, G W; Humanic, T; Ilyashenko, Yu S; Kotov, I; Kraner, H W; Kuczewski, P; Leonhardt, B; Li, Z; Liaw, C J; Lo Curto, G; Middelkamp, P; Minor, R; Munhoz, M; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Soja, B; Sugarbaker, E R; Takahashi, J; Wilson, K; Wilson, R

    2000-01-01

    The Solenoidal Tracker At RHIC-Silicon Vertex Tracker (STAR-SVT) is a three barrel microvertex detector based upon silicon drift detector technology. As designed for the STAR-SVT, silicon drift detectors (SDDs) are capable of providing unambiguous two-dimensional hit position measurements with resolutions on the order of 20 mu m in each coordinate. Achievement of such resolutions, particularly in the drift direction coordinate, depends upon certain characteristics of silicon and drift detector geometry that are uniquely critical for silicon drift detectors hit measurements. Here we describe features of the design of the STAR-SVT SDDs and the front-end electronics that are motivated by such characteristics.

  7. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  8. Blocking for Sequential Political Experiments.

    Science.gov (United States)

    Moore, Ryan T; Moore, Sally A

    2013-10-01

    In typical political experiments, researchers randomize a set of households, precincts, or individuals to treatments all at once, and characteristics of all units are known at the time of randomization. However, in many other experiments, subjects "trickle in" to be randomized to treatment conditions, usually via complete randomization. To take advantage of the rich background data that researchers often have (but underutilize) in these experiments, we develop methods that use continuous covariates to assign treatments sequentially. We build on biased coin and minimization procedures for discrete covariates and demonstrate that our methods outperform complete randomization, producing better covariate balance in simulated data. We then describe how we selected and deployed a sequential blocking method in a clinical trial and demonstrate the advantages of our having done so. Further, we show how that method would have performed in two larger sequential political trials. Finally, we compare causal effect estimates from differences in means, augmented inverse propensity weighted estimators, and randomization test inversion.

  9. Exercising with blocked muscle glycogenolysis

    DEFF Research Database (Denmark)

    Nielsen, Tue L; Pinós, Tomàs; Brull, Astrid

    2018-01-01

    of expression and activation of proteins involved in glycolytic flux revealed that in glycolytic, but not oxidative muscle from exercised McArdle mice, the glycolytic flux had changed compared to that in wild-type mice. Specifically, exercise triggered in glycolytic muscle a differentiated activation of insulin......BACKGROUND: McArdle disease (glycogen storage disease type V) is an inborn error of skeletal muscle metabolism, which affects glycogen phosphorylase (myophosphorylase) activity leading to an inability to break down glycogen. Patients with McArdle disease are exercise intolerant, as muscle glycogen......-derived glucose is unavailable during exercise. Metabolic adaptation to blocked muscle glycogenolysis occurs at rest in the McArdle mouse model, but only in highly glycolytic muscle. However, it is unknown what compensatory metabolic adaptations occur during exercise in McArdle disease. METHODS: In this study, 8...

  10. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-11-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  11. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  12. Thermal simulations of the new design for the BELLE silicon vertex detector

    International Nuclear Information System (INIS)

    Dragic, J.

    2000-01-01

    Full text: The experienced imperfections of the BELLE silicon vertex detector, SVD1 motioned the design of a new detector, SVD2, which targets on improving the main weaknesses encountered in the old design. In this report we focus on tile thermal aspects of the SVD2 ladder, whereby sufficient cooling of the detector is necessary in order to minimise the detector leakage currents. It is estimated that reducing the temperature of the silicon detector from 25 deg C to 15 deg C would result in a 50% reduction in leak current. Further, cooling the detector would help minimize mechanical stresses from the thermal cycling. Our task is to ensure that the heat generated by the readout chips is conducted down the SVD hybrid unit effectively, such that the chip and the hybrid temperature does not overbear the SVD silicon sensor temperature. We considered the performance of two materials to act as a heat spreading plate which is glued between the two hybrids in order to improve the heat conductivity of the hybrid unit, namely Copper and Thermal Pyrolytic Graphite (TPG). The effects of other ladder components were also considered in order to enhance the cooling of the silicon detectors. Finite element analysis with ANSYS software was used to simulate the thermal conditions of the SVD2 hybrid unit, in accordance with the baseline design for the mechanical structure of the ladder. It was found that Cu was a preferred material as it achieved equivalent silicon sensor cooling (3.6 deg C above cooling point), while its mechanical properties rendered it a lot more practical. Suppressing, the thermal path via a rib support block, by increasing its thermal resistivity, as well as increasing thermal conductivity of the ribs in the hybrid region, were deemed essential in the effective cooling of the silicon sensors

  13. Silicone cushions for engineering applications

    International Nuclear Information System (INIS)

    Anon.

    1984-01-01

    When a complex system composed of materials of very different properties is subjected to varying temperature, differential thermal expansion and contraction will produce intolerable stresses unless the parts are separated by suitable cushions. In addition to accommodating differential thermal expansion and contraction, these cushions must absorb shock and vibration, take up dimensional tolerances in the parts, and distribute and attenuate applied loads. We are studying cellular silicone cushions, starting with raw materials and polymer manufacture, to analysis of mechanical and chemical properties, through short- and long-term life testing, in order to tailor cushions to various specific engineering requirements

  14. Fracture dynamics in implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Massy, D.; Tardif, S.; Penot, J. D.; Ragani, J.; Rieutord, F. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC-SP2M, F-38000 Grenoble (France); Mazen, F.; Madeira, F. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Landru, D.; Kononchuk, O. [SOITEC, Parc Technologique des Fontaines, 38190 Bernin (France)

    2015-08-31

    Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack “wake” with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.

  15. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  16. The Belle Silicon Vertex Detector

    CERN Document Server

    Kawasaki, T

    2002-01-01

    The Belle Silicon Vertex Detector (SVD) started working from June 1999 at the KEK B-factory experiment. The main purpose of the SVD is to make precise measurements of the B decay vertex position, which are essential for the observation of CP asymmetries. Excellent vertex resolution and a good detection efficiency are required for the SVD. In the present paper, the performance of Belle SVD is reviewed. The upgrade plan for the SVD2, which is under construction and will be installed in summer 2002, is also presented.

  17. A monolithic silicon detector telescope

    International Nuclear Information System (INIS)

    Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

    1996-01-01

    An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

  18. Imaging monolithic silicon detector telescopes

    International Nuclear Information System (INIS)

    Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

    2008-01-01

    We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

  19. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  20. Subconjunctival and Orbital Silicone Oil Granuloma (Siliconoma Complicating Intravitreal Silicone Oil Tamponade

    Directory of Open Access Journals (Sweden)

    Jung Hye Lee

    2014-01-01

    Full Text Available A 30-year-old male, who underwent previous pars plana vitrectomy and silicone oil tamponade due to endogenous endophthalmitis originated from Klebsiella liver abscess, was referred for evisceration. At 2 months after vitrectomy with silicon oil tamponade, conjunctival chemosis and ocular pain were aggravated. Diffuse eyelid swelling and large subconjunctival mass with lipid droplets were noted. On MRI examination, subconjunctival mass and intra- and extraconal orbital mass around superior rectus muscle were observed. Excision of subconjunctival and orbital mass was performed. Histopathologic examination showed multiple silicone oil vacuoles surrounded by foreign body giant cells and fibrosis, which confirmed silicone oil granuloma. In a patient with suspicious melting sclera in diseases such as endophthalmitis, large silicone oil granuloma may be complicated in a rapid fashion after intravitreal silicone oil tamponade due to silicone oil leakage.

  1. Analyzing block placement errors in SADP patterning

    Science.gov (United States)

    Kobayashi, Shinji; Okada, Soichiro; Shimura, Satoru; Nafus, Kathleen; Fonseca, Carlos; Demand, Marc; Biesemans, Serge; Versluijs, Janko; Ercken, Monique; Foubert, Philippe; Miyazaki, Shinobu

    2016-03-01

    We discuss edge placement errors (EPE) for multi-patterning of Mx critical layers using ArF lithography. Specific focus is placed on the block formation part of the process. While plenty of literature characterization data exist on spacer formation, only limited published data is available on block processes. We analyze the accuracy of placing blocks relative to narrow spacers. Many publications calculate EPE assuming Gaussian distributions for key process variations contributing to EPE. For practical reasons, each contributor is measured on dedicated test structures. In this work, we complement such analysis and directly measure the EPE in product. We perform high density sampling of blocks using CDSEM images and analyze all feature edges of interest. We find that block placement errors can be very different depending on their local design context. Specifically we report on 2 block populations (further called block A and B) which have a 4x different standard deviation. We attribute this to differences in local topography (spacer shape) and interaction with the plasma-etch process design. Block A (on top of the `core space' S1) has excellent EPE uniformity of ~1 nm while block B (on top of `gap space' S2) has degraded EPE control of ~4 nm. Finally, we suggest that the SOC etch process is at the origin on positioning blocks accurately on slim spacers, helping the manufacturability of spacer-based patterning techniques, and helping its extension toward the 5nm node.

  2. Growth of silicon on tungsten diselenide

    NARCIS (Netherlands)

    Yao, Qirong; van Bremen, Rik; Zandvliet, Henricus J.W.

    2016-01-01

    Here, we report a scanning tunneling microscopy and spectroscopy study of the growth of silicon on a tungsten diselenide (WSe2) substrate. We have found convincing experimental evidence that silicon does not remain on the WSe2 substrate but rather intercalates between the top layers of WSe2. Upon

  3. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in

  4. Silicon-Chip-Based Optical Frequency Combs

    Science.gov (United States)

    2015-10-26

    microresonator,” Phys. Rev. Lett. 107, 063901 (2011). [54] H. Jung, et al., “Optical frequency comb generation from aluminum nitride microring resonator...supercontinuum generation in silicon nitride waveguides. 15. SUBJECT TERMS Nonlinear optics, parametric mixing, nanophotonics, optical frequency combs 16...Finally, we investigated comb generation via coherent supercontinuum generation in silicon nitride waveguides. Our research effort illustrates that the

  5. Improved atomic-scale simulations of silicon

    NARCIS (Netherlands)

    Timonova, M.

    2010-01-01

    Although over the past years huge progress has been made in silicon research and silicon can be regarded as one of the best studied chemical elements, even more precise control and understanding of the material is needed as dimensions of electronic elements shrink towards the deep nanolevel. At this

  6. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    Unknown

    tions ranging from kiln furniture to membrane material. Keywords. Microwave sintering; biaxial flexure; silicon carbide. 1. Introduction. Silicon carbide (SiC) ceramics is a very well known candidate material for a structural application. However, due to (i) poor densification due to highly directional bonding, (ii) susceptibility of ...

  7. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  8. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    Superhydrophobic silicon nanostructures were fabricated by anisotropic etching of silicon coated with a thin hydrophobic layer. At certain etch parameters, overhanging nanostructures form at the apexes of the rod-shaped tips, This leads to superoleophobic behavior for several oily liquids...

  9. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    flexible triple junction, amorphous silicon solar cells. At the Malaysia Energy Centre (MEC), we fabricated triple junction amorphous silicon solar cells (up to 12⋅7% efficiency (Wang et al 2002)) and laser-interconnected modules on steel, glass and polyimide substrates. A major issue encountered is the adhesion of thin film ...

  10. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  11. The Solenoidal Detector Collaboration silicon detector system

    International Nuclear Information System (INIS)

    Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

    1992-01-01

    Silicon tracking systems will be fundamental components of the tracking systems for both planned major SSC experiments. Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. This report discusses its design and operation

  12. Case Report: Magnetically retained silicone facial prosthesis ...

    African Journals Online (AJOL)

    Patients with orocutaneous fistulas suffer from discomfort in terms of facial esthetics, food spill over and lack of psychological confidence to present them socially. Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide ...

  13. Synthesis Of A Precursor Of Silicon Nitride

    Science.gov (United States)

    Philipp, Warren H.; Cornell, Linda; Lin, Y. C.

    1994-01-01

    Promising route toward production of highly pure, finely divided, easily sinterable silicon nitride (Si3N4) involves thermal decomposition of silicon diimide {Si(NH)2} prepared by ammonolysis of Si(SCN)4 in CH3CN and purified by complete extraction of byproduct NH4SCN by use of ammonia at temperature and pressure above critical point.

  14. Identification of a Mammalian Silicon Transporter

    NARCIS (Netherlands)

    Ratcliffe, Sarah; Jugdaohsingh, Ravin; Ma, Jian Feng; Mitani-Ueno, Nakimi; Vivancos, Julien; Deshmukh, Rupesh; Boekschoten, Mark; Muller, Michael; Mawhinney, Robert; Marron, Alan; Isenring, Paul; Kinrade, Stephen; Bélanger, Richard; Powell, Jonathan

    2017-01-01

    Silicon (Si) has long been known to play a major physiological role in certain organisms, including some sponges and many diatoms and higher plants, leading to the recent identification of multiple proteins responsible for silicon transport in a range of algal and plant species. In mammals, despite

  15. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  16. Muon decay channeling in silicon

    International Nuclear Information System (INIS)

    Patterson, B.D.; Bosshard, A.; Straumann, U.; Truoel, P.; Wueest, A.; Wichert, Th.

    1984-01-01

    The angular distribution of positrons from muon decay in an oriented [111] Si wafer shows a symmetric pattern of six lines of minimum counting rate radiating from a central minimum. The pattern results from positron blocking by the (110) planes and [111] axis. The measurement technique and the dependence of the features on positron energy, muon implantation depth and sample temperature are discussed. (Auth.)

  17. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find that the ...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics......We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...

  18. Silicon nanostructures for cancer diagnosis and therapy.

    Science.gov (United States)

    Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao

    2015-01-01

    The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

  19. Silicon isotope fractionation by marine siliceous sponges

    Science.gov (United States)

    Hendry, K. R.; Maldonado, M.

    2016-02-01

    The stable isotope composition of benthic sponge spicule silica is a potential source of palaeoceanographic information about past deep seawater chemistry. The silicon isotope composition of spicules has been shown to relate to the silicic acid concentration of ambient water. However, existing calibrations do exhibit a degree of scatter in the relationship, and there are many open questions surrounding the mechanism behind isotopic fractionation during biosilicification. Here, we present a new study of silicon isotopes in siliceous sponges, covering a range of ancestral lineages, marine environments and geographical locations, and the impact of cleaning methods of silicon isotope compositions. We show that the cleaning method has minimal impact on silicon isotope composition of sponge spicules. Our results highlight the importance of environmental and biological factors on silicon isotope fractionation, and we discuss the implications of these results on the use of palaeoceanographic applications of sponge spicules.

  20. A continuous Czochralski silicon crystal growth system

    Science.gov (United States)

    Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

    2003-03-01

    Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

  1. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  2. Radiation cured silicone rubber articles

    International Nuclear Information System (INIS)

    DuPont, J.G.; Goodwin, P.A.

    1984-01-01

    A process for making radiation cured silicone rubber articles is disclosed wherein a hydroxyl-terminated polysilaxane having a molecular weight from about 50,000 to about 2,000,000, optionally modified by mixing with up to 85% of an end-stopped silicone rubber, is mixed with from about 10 to about 70 parts per hundred of rubber of a finely divided silica filler with a particle size in the reinforcing range and other inert fillers as determined by desired final properties; the composition so prepared is formed into the desired shape at room temperature; the article so formed is precured to improve the mechanical properties of the material with which it is made by exposure to ammonia gas, ammonium hydroxide, or to the vapors or solutions of a volatile amine at room temperature; and the precured article is irradiated with high energy electrons or gamma radiation to effect a permanent cure of the material from which the article is formed

  3. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  4. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  5. Growth and gas exchanges of arugula plants under silicon fertilization and water restriction

    Directory of Open Access Journals (Sweden)

    Edmar G. de Jesus

    Full Text Available ABSTRACT The objective of this article was to study the growth and gas exchange of arugula plants under silicon (Si fertilization and water stress. The experiment was installed in a greenhouse, located in the municipality of Pombal, PB, Brazil, whose geographic coordinates are 6º 46 ‘S latitude and 37º 49’ W longitude and 178 m of altitude, situated in the 'Sertão Paraibano' micro-region. The experimental design was in randomized blocks, in 5 x 2 factorial scheme, corresponding to five Si doses (0, 50, 100, 150 and 200 mg L-1 and two irrigation depths [50 and 100% of real evapotranspiration (ETr based on weighing lysimeter], with four replicates. Silicon application was performed as foliar spray, using a commercial product composed of 0.75% Si and 0.15% Mo. Arugula growth and gas exchange was evaluated. Higher values for number of leaves and plant height were obtained in plants cultivated under 100% ETr. Silicon application between 100 and 120 mg L-1 led to better results in the physiological variables of arugula plants under water stress. Silicon application between 30 and 60 mg L-1 in arugula plants under 100% ETr irrigation allowed greater phytomass accumulation.

  6. Novel strategy to improve the Li-storage performance of micro silicon anodes

    Science.gov (United States)

    Choi, Min-Jae; Xiao, Ying; Hwang, Jang-Yeon; Belharouak, Ilias; Sun, Yang-Kook

    2017-04-01

    Silicon (Si)-based materials have attracted significant research as an outstanding candidate for the anode material of lithium-ion batteries. However, the tremendous volume change and poor electron conductivity of bulk silicon result in inferior capacity retention and low Coulombic efficiency. Designing special Si with high energy density and good stability in a bulk electrode remains a significant challenge. In this work, we introduce an ingenious strategy to modify micro silicon by designing a porous structure, constructing nanoparticle blocks, and introducing carbon nanotubes as wedges. A disproportion reaction, coupled with a chemical etching process and a ball-milling reaction, are applied to generate the desired material. The as-prepared micro silicon material features porosity, small primary particles, and effective CNT-wedging, which combine to endow the resultant anode with a high reversible specific capacity of up to 2028.6 mAh g-1 after 100 cycles and excellent rate capability. The superior electrochemical performance is attributed to the unique architecture and optimized composition.

  7. Development of Thin-Window Silicon Drift Detector for X-ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W.; Carini, G.A.; De Geronimo, G.; Fried, J.; Gaskin, J.A.; Keister, J.W.; Li, Z.; Ramsey, B.D.; Rehak, P.; Siddons, D.P.

    2009-10-01

    A new set of thin-window silicon drift detectors composed of an array of hexagonal shaped detectors has been designed, constructed and tested for X-ray spectroscopy. Each individual ThinWinSDD has a thin entrance window on one side and a spiral shaped hexagonal cathode around a center anode on the other side. To produce the thin entrance window a 10 keV implantation of boron through a 500 A silicon dioxide was used. The implantation was followed by an annealing at 700 C for 30 min and a reactive ion etching step to ensure the removal of silicon dioxide from the smallest feature (5 mum). An aluminum layer is coated in the same vacuum system after back-sputtering. This step involves removing the native oxide that has formed on the top of the silicon substrate and then sputtering a 1100 A thick layer of aluminum onto the X-ray entrance window. The aluminum layer must be thick enough to block visible light, but thin enough to be transparent to soft X-rays down to 280 eV. We discuss first test results that include detector leakage current measurements and the response for multiple detectors exposed to the National Synchrotron Light Source's UV beam line U3C located at Brookhaven National Laboratory for X-ray energies as low as 280 eV.

  8. Development of Thin-Window Silicon Drift Detector for X-ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W.; Carini, G.; De Geronimo, G; Fried, J.; Gaskin, J.A.; Keister, J.W.; Li, Z.; Ramsey, B.D.; Rehak, P.; Siddons, D.P.

    2008-01-22

    A new set of Thin-Window Silicon Drift Detectors composed of an array of hexagonal shaped detectors has been designed, constructed and tested for X-ray spectroscopy. Each individual ThinWinSDD has a thin entrance window on one side and a spiral shaped hexagonal cathode around a center anode on the other side. To produce the thin entrance window a 10 keV implantation of boron through a 500 {angstrom} silicon dioxide was used. The implantation was followed by an annealing at 700 C for 30 min and a reactive ion etching step to ensure the removal of silicon dioxide from the smallest feature (5 {micro}m). An aluminum layer is coated in the same vacuum system after back-sputtering. This step involves removing the native oxide that has formed on the top of the silicon substrate and then sputtering a 1100 {angstrom} thick layer of aluminum onto the X-ray entrance window. The aluminum layer must be thick enough to block visible light, but thin enough to be transparent to soft x-rays down to 280 eV. We discuss first test results that include detector leakage current measurements and the response for multiple detectors exposed to the National Synchrotron Light Source's UV beam line U3C located at Brookhaven National Laboratory for X-ray energies as low as 280 eV.

  9. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  10. A block for nuclear reactor reflector covers

    International Nuclear Information System (INIS)

    Helm, H.

    1980-01-01

    The graphite block with hexagonal profile is provided with cylindrical channels passing from the corners of the upper end face towards the diagonally opposed corners of the lower end face. These channels enable gas cooling of the blocks joined together and avoid direct escape of neutrons. The blocks can also be joined together in such way that they form even-cylindrical channel for control rods for example. (GL) [de

  11. Iron Oxide Arrays Prepared from Ferrocene- and Silsesquioxane-Containing Block Copolymers

    Directory of Open Access Journals (Sweden)

    Raita Goseki

    2012-01-01

    Full Text Available Arrays of iron oxides as precursors of iron clusters were prepared by oxygen plasma treatment of block copolymer microphase-separated nanostructures in thin films. Block copolymers composed of ferrocene-containing and silsesquioxane-containing polymethacrylate (PMAPOSS-b-PMAHFC were successfully prepared, with different molecular weights and compositions and narrow molecular weight distributions, by living anionic polymerization. The formed microphase-separated nanostructures in the bulk were characterized by wide- and small-angle X-ray scattering (WAXS and SAXS, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Thin films were prepared from a solution of PMAPOSS-b-PMAHFC in tetrahydrofuran by spin coating onto silicon wafers. Fingerprint-type line nanostructures were formed in the PMAPOSS-b-PMAHFCs thin films after solvent annealing with carbon disulfide. Oxygen plasma treatment provided the final line arrays of iron oxides based on the formed nanostructural patterns.

  12. The Learning Potentials of Number Blocks

    DEFF Research Database (Denmark)

    Majgaard, Gunver; Nielsen, Jacob; Misfeldt, Morten

    2012-01-01

    . The tool is called Number Blocks and it combines physical interaction, learning, and immediate feedback. Number Blocks supports the children's understanding of place value in the sense that it allows them to experiment with creating large numbers. We found the blocks contributed to the learning process...... in several ways. The blocks combined mathematics and play, and they included and supported children at different academic levels. The auditory representation, especially the enhanced rhythmic effects due to using speech synthesis, and the rhythm helped the children to pronounce large numbers. This creates...

  13. Modelling of multi-block data

    DEFF Research Database (Denmark)

    Høskuldsson, Agnar; Svinning, K.

    2006-01-01

    Here is presented a unified approach to modelling multi-block regression data. The starting point is a partition of the data X into L data blocks, X = (X-1, X-2,...X-L), and the data Y into M data-blocks, Y = (Y-1, Y-2,...,Y-M). The methods of linear regression, X -> Y, are extended to the case...... these methods can be extended to a network of data blocks. Examples of the optimisation procedures in a network are shown. The examples chosen are the ones that are useful to work within industrial production environments. The methods are illustrated by simulated data and data from cement production....

  14. Using Interference to Block RFID Tags

    DEFF Research Database (Denmark)

    Krigslund, Rasmus; Popovski, Petar; Pedersen, Gert Frølund

    We propose a novel method to block RFID tags from responding, using intentional interference. We focus on the experimental evaluation, where we impose interference on the download and uplink, respectively. The results are positive, where modulated CCI shows most effective to block a tag.......We propose a novel method to block RFID tags from responding, using intentional interference. We focus on the experimental evaluation, where we impose interference on the download and uplink, respectively. The results are positive, where modulated CCI shows most effective to block a tag....

  15. Recent developments in paediatric neuraxial blocks

    Directory of Open Access Journals (Sweden)

    Vrushali Chandrashekhar Ponde

    2012-01-01

    Full Text Available Paediatric anaesthesia and paediatric regional anaesthesia are intertwined. Almost all surgeries unless contradicted could be and should be supplemented with a regional block. The main objective of this review is to elaborate on the recent advances of the central neuraxial blocks, such as application of ultrasound guidance and electrical stimulation in the pursuit of safety and an objective end point. This review also takes account of the traditional technique and understand the benefits as well the risk of each as compared with the recent technique. The recent trends in choosing the most appropriate peripheral block for a given surgery thereby sparing the central neuroaxis is considered. A penile block for circumcision or a sciatic block for unilateral foot surgery, rather than caudal epidural would have a better risk benefit equation. Readers will find a special mention on the recent thoughts on continuous epidural analgesia in paediatrics, especially its rise and fall, yet its unique importance. Lastly, the issue of block placements under sedation or general anaesthesia with its implication in this special population is dealt with. We conducted searches in MEDLINE (PubMed and assessed the relevance of the abstracts of citations identified from literature searches. The search was carried out in English, for last 10 years, with the following key words: Recent advances in paediatric regional anaesthesia; ultrasound guidance for central neuraxial blocks in children; role of electrical stimulation in neuraxial blocks in children; complications in neuraxial block. Full-text articles of potentially relevant abstracts were retrieved for further review.

  16. A MAC Mode for Lightweight Block Ciphers

    DEFF Research Database (Denmark)

    Luykx, Atul; Preneel, Bart; Tischhauser, Elmar Wolfgang

    2016-01-01

    Lightweight cryptography strives to protect communication in constrained environments without sacrificing security. However, security often conflicts with efficiency, shown by the fact that many new lightweight block cipher designs have block sizes as low as 64 or 32 bits. Such low block sizes lead...... no effect on the security bound, allowing an order of magnitude more data to be processed per key. Furthermore, LightMAC is incredibly simple, has almost no overhead over the block cipher, and is parallelizable. As a result, LightMAC not only offers compact authentication for resource-constrained platforms...

  17. Destabilization emulsion of oil by means of additives based on silicones polyethers; Desestabilizacao de emulsoes de petroleo por meio de aditivos a base de silicones polieteres

    Energy Technology Data Exchange (ETDEWEB)

    Jarque, Erika A.; Mansur, Claudia R.E. [Universidade Federal do Rio de Janeiro (IMA/UFRJ), RJ (Brazil). Inst. de Macromoleculas Professora Eloisa Mano], e-mails: alegrio@ima.ufrj.br, celias@ima.ufrj.br

    2011-07-01

    The process of demulsification has great importance in the petroleum industry, since the formation of emulsions is a natural phenomenon in this sector. Several polymers have been used commercially as additives emulsion destabilizing, among them are the block copolymers of poly (ethylene oxide)-poly (propylene oxide) (PEO-PPO). This work aims to study the efficiency of five additives based on silicones polyethers, which have structures in their chains of poly (ethylene oxide) (PEO) or PEO-PPO copolymers. The results show that the addition of these additives in the water / oil reduced the values of interfacial tension of systems. From the testing of gravitational separation water / oil was observed that all the additives promoted the breakdown of water / oil, but those who hold in their structures the chains of block copolymers of PEO-PPO were the most efficient, and that the caused a smaller reduction in the interfacial tensions of these systems. (author)

  18. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  19. Building blocks of the universe

    International Nuclear Information System (INIS)

    Malamud, E.; O'Connor, C.; Cooper, A.

    1990-01-01

    COSI [Ohio's Center for Science and Industry], a well established science center, and SciTech, an emerging one, have formed a collaboration to develop a group of original interactive exhibits conveying to a wide audience the nature of the most fundamental features of the Universe, as revealed in the fascinating world of nuclear and particle science. These new exhibits will add to, and be supported by, the basic science exhibits which have already attracted large numbers of visitors to both centers. The new project, called Building Blocks of the Universe, aims to foster an appreciation of the way all features of the Universe arise from simple, basic rules and to lead the visitor from the perceived complexities of our surroundings, to the unperceived, but simpler features of the sub-nuclear world. It has already become apparent from individual prototypes that these simple but immensely far-reaching ideas can indeed be conveyed by hands-on exhibits. These exhibits will be linked and enhanced by an effective museum environment, using pictorial diagrams, accurate non-technical text, and artistic displays to create an atmosphere in which visitors can learn about phenomena beyond the range of direct perception. This paper describes the goals, content and organization of the exhibition. The authors also outline their experience with prototype exhibits, and thereby invite additional input into the development process

  20. Capturing Reality at Centre Block

    Science.gov (United States)

    Boulanger, C.; Ouimet, C.; Yeomans, N.

    2017-08-01

    The Centre Block of Canada's Parliament buildings, National Historic Site of Canada is set to undergo a major rehabilitation project that will take approximately 10 years to complete. In preparation for this work, Heritage Conservation Services (HCS) of Public Services and Procurement Canada has been completing heritage documentation of the entire site which includes laser scanning of all interior rooms and accessible confined spaces such as attics and other similar areas. Other documentation completed includes detailed photogrammetric documentation of rooms and areas of high heritage value. Some of these high heritage value spaces present certain challenges such as accessibility due to the height and the size of the spaces. Another challenge is the poor lighting conditions, requiring the use of flash or strobe lighting to either compliment or completely eliminate the available ambient lighting. All the spaces captured at this higher level of detail were also captured with laser scanning. This allowed the team to validate the information and conduct a quality review of the photogrammetric data. As a result of this exercise, the team realized that in most, if not all cases, the photogrammetric data was more detailed and at a higher quality then the terrestrial laser scanning data. The purpose and motivation of this paper is to present these findings, as well provide the advantages and disadvantages of the two methods and data sets.

  1. CAPTURING REALITY AT CENTRE BLOCK

    Directory of Open Access Journals (Sweden)

    C. Boulanger

    2017-08-01

    Full Text Available The Centre Block of Canada’s Parliament buildings, National Historic Site of Canada is set to undergo a major rehabilitation project that will take approximately 10 years to complete. In preparation for this work, Heritage Conservation Services (HCS of Public Services and Procurement Canada has been completing heritage documentation of the entire site which includes laser scanning of all interior rooms and accessible confined spaces such as attics and other similar areas. Other documentation completed includes detailed photogrammetric documentation of rooms and areas of high heritage value. Some of these high heritage value spaces present certain challenges such as accessibility due to the height and the size of the spaces. Another challenge is the poor lighting conditions, requiring the use of flash or strobe lighting to either compliment or completely eliminate the available ambient lighting. All the spaces captured at this higher level of detail were also captured with laser scanning. This allowed the team to validate the information and conduct a quality review of the photogrammetric data. As a result of this exercise, the team realized that in most, if not all cases, the photogrammetric data was more detailed and at a higher quality then the terrestrial laser scanning data. The purpose and motivation of this paper is to present these findings, as well provide the advantages and disadvantages of the two methods and data sets.

  2. Comparative study between ultrasound guided tap block and paravertebral block in upper abdominal surgeries. Randomized controlled trial

    Directory of Open Access Journals (Sweden)

    Ruqaya M. Elsayed

    2017-01-01

    Conclusion: We concluded that ultrasound guided transversus abdominis plane block and thoracic paravertebral block were safe and effective anesthetic technique for upper abdominal surgery with longer and potent postoperative analgesia in thoracic paravertebral block than transversus abdominis block.

  3. NATO Advanced Research Workshop on Environmental and Biological Risks of Hybrid Organic-Silicon Nanodevices

    CERN Document Server

    Kozyrev, Sergey; Vaseashta, Ashok

    2009-01-01

    Even though there is no generally accepted definition of nanotechnologies to be defined as distinct discipline there is an emerging consensus that their advent and development is a growing in importance factor of the contemporary and future technological civilization. One of these most fundamental issues we are confronted with is the compatibility with life itself. From single cell organisms to humans, carbon is a key building block of all molecular structures of life. In contrast the man created electronic industry to build on other elements, of which silicon is the most common. Both carbon and silicon create molecular chains, although different in their internal structure. All life is built from carbon-based chains. As long as the man built technological products do not directly interfere with the physiology of life the associated risks from them are relatively easy to identify. They are primarily in the environmental pollution and the possibility of upsetting the natural balance of biocoenosis, on a planet...

  4. 3D silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

    2009-06-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

  5. Study of effects of radiation on silicone prostheses

    International Nuclear Information System (INIS)

    Shedbalkar, A.R.; Devata, A.; Padanilam, T.

    1980-01-01

    Radiation effects on silicone gel and dose distribution of radiation through mammary prostheses were studied. Silicone gel behaves like tissue. Half value thickness for silicone gel and water are almost the same. Linear absorption coefficient for silicone gel and water are comparable

  6. Silicon Micro- and Nanofabrication for Medicine

    Science.gov (United States)

    Fine, Daniel; Goodall, Randy; Bansal, Shyam S.; Chiappini, Ciro; Hosali, Sharath; van de Ven, Anne L.; Srinivasan, Srimeenkashi; Liu, Xuewu; Godin, Biana; Brousseau, Louis; Yazdi, Iman K.; Fernandez-Moure, Joseph; Tasciotti, Ennio; Wu, Hung-Jen; Hu, Ye; Klemm, Steve; Ferrari, Mauro

    2013-01-01

    This manuscript constitutes a review of several innovative biomedical technologies fabricated using the precision and accuracy of silicon micro- and nanofabrication. The technologies to be reviewed are subcutaneous nanochannel drug delivery implants for the continuous tunable zero-order release of therapeutics, multi-stage logic embedded vectors for the targeted systemic distribution of both therapeutic and imaging contrast agents, silicon and porous silicon nanowires for investigating cellular interactions and processes as well as for molecular and drug delivery applications, porous silicon (pSi) as inclusions into biocomposites for tissue engineering, especially as it applies to bone repair and regrowth, and porous silica chips for proteomic profiling. In the case of the biocomposites, the specifically designed pSi inclusions not only add to the structural robustness, but can also promote tissue and bone regrowth, fight infection, and reduce pain by releasing stimulating factors and other therapeutic agents stored within their porous network. The common material thread throughout all of these constructs, silicon and its associated dielectrics (silicon dioxide, silicon nitride, etc.), can be precisely and accurately machined using the same scalable micro- and nanofabrication protocols that are ubiquitous within the semiconductor industry. These techniques lend themselves to the high throughput production of exquisitely defined and monodispersed nanoscale features that should eliminate architectural randomness as a source of experimental variation thereby potentially leading to more rapid clinical translation. PMID:23584841

  7. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  8. [Vision Loss in Association with Silicone Oil].

    Science.gov (United States)

    Tode, J; Roider, J

    2017-01-23

    Silicone oil tamponades have been a key feature of vitreoretinal surgery for more than 40 years. The use of these durable vitreous substitutes has not only been limited to tractive retinal detachments, inflammatory chorioretinopathies or other complicated vitreoretinal diseases, but also to macular holes and rhegmatogenous retinal detachment. During the last 12 years, an increasing number of cases of vision loss during or after the removal of silicone oil have been reported in the literature. In up to one third of patients with uncomplicated macula-attached retinal detachment with good preoperative vision, continuing vision loss is seen. In most of these cases, thinning of the inner retinal layers can be found. The underlying pathological mechanism is unknown. A direct connection to silicone oil is likely, but has not been proven. However, the increasing number of reports raises evidence that silicone oil itself might be the reason for this phenomenon, which is not observed in gas tamponades. Vision loss during or after the removal of silicone oil is an underestimated problem. The safety and toxicity of silicone oil should be reexamined systematically. The search for novel vitreous replacements is indispensable. The use of silicone oil should be strictly evaluated and balanced against other possible tamponades in every individual case. Georg Thieme Verlag KG Stuttgart · New York.

  9. Ionization of amphiphilic acidic block copolymers.

    Science.gov (United States)

    Colombani, Olivier; Lejeune, Elise; Charbonneau, Céline; Chassenieux, Christophe; Nicolai, Taco

    2012-06-28

    The ionization behavior of an amphiphilic diblock copolymer poly(n-butyl acrylate(50%)-stat-acrylic acid(50%))(100)-block-poly(acrylic acid)(100) (P(nBA(50%)-stat-AA(50%))(100)-b-PAA(100), DH50) and of its equivalent triblock copolymer P(nBA(50%)-stat-AA(50%))(100)-b-PAA(200)-b-P(nBA(50%)-stat-AA(50%))(100) (TH50) were studied by potentiometric titration either in pure water or in 0.5 M NaCl. These polymers consist of a hydrophilic acidic block (PAA) connected to a hydrophobic block, P(nBA(50%)-stat-AA(50%))(100), whose hydrophobic character has been mitigated by copolymerization with hydrophilic units. We show that all AA units, even those in the hydrophobic block could be ionized. However, the AA units within the hydrophobic block were less acidic than those in the hydrophilic block, resulting in the preferential ionization of the latter block. The preferential ionization of PAA over that of P(nBA(50%)-stat-AA(50%))(100) was stronger at higher ionic strength. Remarkably, the covalent bonds between the PAA and P(nBA(50%)-stat-AA(50%))(100) blocks in the diblock or the triblock did not affect the ionization of each block, although the self-association of the block copolymers into spherical aggregates modified the environment of the PAA blocks compared to when PAA was molecularly dispersed.

  10. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  11. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  12. Approximate design theory for a simple block design with random block effects

    OpenAIRE

    Christof, Karin

    1985-01-01

    Approximate design theory for a simple block design with random block effects / K. Christof ; F. Pukelsheim. - In: Linear statistical inference / ed. by T. Calinski ... - Berlin u. a. : Springer, 1985. - S. 20-28. - (Lecture notes in statistics ; 35)

  13. Micellar aggregates of amylose-block-polystyrene rod-coil block copolymers in water and THF

    NARCIS (Netherlands)

    Loos, Katja; Böker, Alexander; Zettl, Heiko; Zhang, Mingfu; Krausch, Georg; Müller, Axel H.E.; Boker, A.; Zhang, A.F.

    2005-01-01

    Amylose-block-polystyrenes with various block copolymer compositions were investigated in water and in THF solution. Fluorescence correlation spectroscopy, dynamic light, scattering (DLS), and asymmetric flow field-flow fractionation with multiangle light scattering detection indicate the presence

  14. Optical absorption of silicon nanowires

    International Nuclear Information System (INIS)

    Xu, T.; Lambert, Y.; Krzeminski, C.; Grandidier, B.; Stiévenard, D.; Lévêque, G.; Akjouj, A.; Pennec, Y.; Djafari-Rouhani, B.

    2012-01-01

    We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods: the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the finite difference time domain (FDTD) method, is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies that allow to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

  15. The CMS Silicon Tracker Alignment

    CERN Document Server

    Castello, R

    2008-01-01

    The alignment of the Strip and Pixel Tracker of the Compact Muon Solenoid experiment, with its large number of independent silicon sensors and its excellent spatial resolution, is a complex and challenging task. Besides high precision mounting, survey measurements and the Laser Alignment System, track-based alignment is needed to reach the envisaged precision.\\\\ Three different algorithms for track-based alignment were successfully tested on a sample of cosmic-ray data collected at the Tracker Integration Facility, where 15\\% of the Tracker was tested. These results, together with those coming from the CMS global run, will provide the basis for the full-scale alignment of the Tracker, which will be carried out with the first \\emph{p-p} collisions.

  16. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  17. CMS Silicon Strip Tracker Performance

    CERN Document Server

    Agram, Jean-Laurent

    2012-01-01

    The CMS Silicon Strip Tracker (SST), consisting of 9.6 million readout channels from 15148 modules and covering an area of 198 square meters, needs to be precisely calibrated in order to correctly reconstruct the events recorded. Calibration constants are derived from different workflows, from promptly reconstructed events with particles as well as from commissioning events gathered just before the acquisition of physics runs. The performance of the SST has been carefully studied since the beginning of data taking: the noise of the detector, data integrity, signal-over-noise ratio, hit reconstruction efficiency and resolution have been all investigated with time and for different conditions. In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

  18. Germanium silicon physics and materials

    CERN Document Server

    Willardson, R K; Bean, John C; Hull, Robert

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  19. Silicon photonic physical unclonable function.

    Science.gov (United States)

    Grubel, Brian C; Bosworth, Bryan T; Kossey, Michael R; Sun, Hongcheng; Cooper, A Brinton; Foster, Mark A; Foster, Amy C

    2017-05-29

    Physical unclonable functions (PUFs) serve as a hardware source of private information that cannot be duplicated and have applications in hardware integrity and information security. Here we demonstrate a photonic PUF based on ultrafast nonlinear optical interactions in a chaotic silicon micro-cavity. The device is probed with a spectrally-encoded ultrashort optical pulse, which nonlinearly interacts with the micro-cavity. This interaction produces a highly complex and unpredictable, yet deterministic, ultrafast response that can serve as a unique "fingerprint" of the cavity and as a source of private information for the device's holder. Experimentally, we extract 17.1-kbit binary keys from six different photonic PUF designs and demonstrate the uniqueness and reproducibility of these keys. Furthermore, we experimentally test exact copies of the six photonic PUFs and demonstrate their unclonability due to unavoidable fabrication variations.

  20. Particle identification by silicon detectors

    International Nuclear Information System (INIS)

    Santos, Denison de Souza

    1997-01-01

    A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

  1. Silicon photomultiplier timing performance study

    Science.gov (United States)

    Gamal, Ahmed; Paul, Bühler; Johann, Marton; Ken, Suzuki

    2011-10-01

    Many characteristics of Silicon Photomultipliers can be tuned with temperature and operation voltage. We present preliminary results of a study of the effect of these two operation parameters on the time resolution of large active area Multi-Pixel Photon Counters (MPPCs) manufactured by Hamamatsu. Measurements at -10, 0, and 10 °C at different bias voltages were performed. The time resolution is best at low temperature and high over-voltage. Most significant improvements can be achieved in cases with low number of fired pixels (40 pixels) the effect of temperature and operation voltage becomes smaller. The timing performance still improves with decreasing temperature ( ≈factor of 2) but it hardly depends on the operation voltage. The study shows that especially in applications where only few photons are available for detection a careful optimization of temperature and operation voltage are advisable to obtain optimum timing results with the MPPC.

  2. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether...... breast implants for a median period of 12 years (range, 3 to 25 years). A follow-up magnetic resonance imaging examination was carried out in 2001, excluding women who underwent explantation in the period between the two magnetic resonance imaging examinations (n = 44). On the basis of these examinations......, the authors identified 64 women who had at least one ruptured implant at the first magnetic resonance imaging examination and, for comparison, all women who had intact implants at both examinations (n = 98). Magnetic resonance images from the two examinations were compared and changes in rupture configuration...

  3. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether...... untreated ruptures are associated with changes over time in magnetic resonance imaging findings, serologic markers, or self-reported breast symptoms. A baseline magnetic resonance imaging examination was performed in 1999 on 271 women who were randomly chosen from a larger cohort of women having cosmetic...... breast implants for a median period of 12 years (range, 3 to 25 years). A follow-up magnetic resonance imaging examination was carried out in 2001, excluding women who underwent explantation in the period between the two magnetic resonance imaging examinations (n = 44). On the basis of these examinations...

  4. Calcinosis Cutis Long after Rhinoplasty with Silicone

    Science.gov (United States)

    Honda, Yuki; Tanizaki, Hideaki; Otsuka, Atsushi; Miyachi, Yoshiki; Kabashima, Kenji

    2014-01-01

    Rhinoplasty is a plastic surgery procedure to reconstruct the nose. Silicone alloplastic materials are most widely used as implants for rhinoplasty, but calcification on the surface occurs with long-term usage. Herein, we report a case of gruel-like calcification approximately 50 years after silicone implant rhinoplasty. In this case, calcification on the silicone surface might have transformed into gruel-like deposits, which presented as a subcutaneous mass at the dorsal area of the nose. The precise mechanism is unclear; a pH change in the tissue might have occurred during the process of inflammation, leading to the dissolution of calcified deposits. PMID:25685132

  5. Calcinosis Cutis Long after Rhinoplasty with Silicone

    Directory of Open Access Journals (Sweden)

    Yuki Honda

    2014-12-01

    Full Text Available Rhinoplasty is a plastic surgery procedure to reconstruct the nose. Silicone alloplastic materials are most widely used as implants for rhinoplasty, but calcification on the surface occurs with long-term usage. Herein, we report a case of gruel-like calcification approximately 50 years after silicone implant rhinoplasty. In this case, calcification on the silicone surface might have transformed into gruel-like deposits, which presented as a subcutaneous mass at the dorsal area of the nose. The precise mechanism is unclear; a pH change in the tissue might have occurred during the process of inflammation, leading to the dissolution of calcified deposits.

  6. Quantum conductance in silicon quantum wires

    CERN Document Server

    Bagraev, N T; Klyachkin, L E; Malyarenko, A M; Gehlhoff, W; Ivanov, V K; Shelykh, I A

    2002-01-01

    The results of investigations of electron and hole quantum conductance staircase in silicon quantum wires are presented. The characteristics of self-ordering quantum wells of n- and p-types, which from on the silicon (100) surface in the nonequilibrium boron diffusion process, are analyzed. The results of investigations of the quantum conductance as the function of temperature, carrier concentration and modulation degree of silicon quantum wires are given. It is found out, that the quantum conductance of the one-dimensional channels is observed, for the first time, at an elevated temperature (T >= 77 K)

  7. Silicon strip detectors for the LHCb experiment

    OpenAIRE

    Steinkamp, O

    2005-01-01

    The LHCb experiment is a single-arm magnetic spectrometer. Silicon micro-strip detectors are employed in a significant fraction of the tracking system. The Vertex Locator consists of 21 detector stations that operate inside the LHC beam pipe and are separated from the beam vacuum by a thin aluminium foil. The Silicon Tracker is a large-surface silicon micro-strip detector that covers the full acceptance of the experiment in a single tracking station upstream of the spectrometer magnet and the...

  8. Hexacoordinate bonding and aromaticity in silicon phthalocyanine.

    Science.gov (United States)

    Yang, Yang

    2010-12-23

    Si-E bondings in hexacoordinate silicon phthalocyanine were analyzed using bond order (BO), energy partition, atoms in molecules (AIM), electron localization function (ELF), and localized orbital locator (LOL). Bond models were proposed to explain differences between hexacoordinate and tetracoordinate Si-E bondings. Aromaticity of silicon phthalocyanine was investigated using nucleus-independent chemical shift (NICS), harmonic oscillator model of aromaticity (HOMA), conceptual density functional theory (DFT), ring critical point (RCP) descriptors, and delocalization index (DI). Structure, energy, bonding, and aromaticity of tetracoordinate silicon phthalocyanine were studied and compared with hexacoordinate one.

  9. From silicon to organic nanoparticle memory devices.

    Science.gov (United States)

    Tsoukalas, D

    2009-10-28

    After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

  10. Titanium catalyzed silicon nanowires and nanoplatelets

    Directory of Open Access Journals (Sweden)

    Mohammad A. U. Usman

    2013-03-01

    Full Text Available Silicon nanowires, nanoplatelets, and other morphologies resulted from silicon growth catalyzed by thin titanium layers. The nanowires have diameters down to 5 nm and lengths to tens of micrometers. The two-dimensional platelets, in some instances with filigreed, snow flake-like shapes, had thicknesses down to the 10 nm scale and spans to several micrometers. These platelets grew in a narrow temperature range around 900 celsius, apparently representing a new silicon crystallite morphology at this length scale. We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands.

  11. Electroretinogram Changes following Silicone Oil Removal

    Directory of Open Access Journals (Sweden)

    Mohsen Azarmina

    2011-01-01

    Full Text Available Purpose: To evaluate electroretinogram (ERG changes after silicone oil removal. Methods: Scotopic and photopic ERGs, and best-corrected visual acuity (BCVA were checked before and shortly after silicone oil removal in eyes that had previously undergone vitrectomy and silicone oil injection for complex retinal detachment. Preand postoperative ERG a- and b-wave amplitudes were compared. Results: Twenty-eight eyes of 28 patients including 20 male and 8 female subjects with mean age of 39.3 ± 0.06 (range, 12 to 85 years were studied. Mean interval from primary vitreoretinal surgery to silicone oil removal was 21.04 ± 0.52 (range, 7 to 39 months. Mean duration from silicone oil removal to second ERG was 13.04 ± 1.75 (range, 10 to 16 days. Before silicone oil removal, mean a-wave amplitudes in maximal combined response, rod response and cone response ERGs were 27.4 ± 19.9, 7.2 ± 4.5 and 5.5 ± 3.4 μv, respectively. These values increased to 48.8 ± 31.9, 15.1 ± 14.4 and 17.4 ± 22.2 μv, respectively after silicone oil removal (P < 0.001. Mean b-wave amplitudes in the same order, were 69.41 ± 51, 41.2 ± 30.4 and 25.1 ± 33.9 μv before silicone oil removal, increasing to 165.6 ± 102.5, 81.7 ± 53.7 and 44.7 ± 34.1 μv respectively, after silicone oil removal (P < 0.001. Mean BCVA significantly improved from 1.10 ± 0.34 at baseline to 1.02 ± 0.33 logMAR after silicone oil removal (P < 0.001. Conclusion: The amplitudes of ERG a- and b-waves under scotopic and photopic conditions increased significantly shortly after silicone oil removal. An increase in BCVA was also observed. These changes may be explained by the insulating effect of silicone oil on the retina.

  12. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...... the molten silicon reacts spontaneously with the molecular chlorine, resulting in trenches with the width of the laser-generated melt. Trenches have been etched with a width of less than 70 nm. To explain the functional dependence of the melt size on absorbed power, the calculations based on a two...

  13. 24% efficient PERL structure silicon solar cells

    International Nuclear Information System (INIS)

    Zhao, J.; Wang, A.; Green, M.A.

    1990-01-01

    This paper reports that the performance of silicon solar cells have been significantly improved using an improved PERL (passivated emitter, rear locally-diffused) cell structure. This structure overcomes deficiencies in an earlier PERC (passivated emitter and rear cell) cell structure by locally diffusing boron into contact areas at the rear of the cells. Terrestrial energy conversion efficiencies up to 24% are reported for silicon cells for the first time. Air Mass O efficiencies approach 21%. The first batches of concentrator cells using the new structure have demonstrated significant improvement with 29% efficient concentrator silicon cells expected in the near future

  14. Bimodal condensation silicone elastomers as dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    unimodal refers to that there is one polymer only in the system. As an alternative to unimodal networks there are the bimodal networks where two polymers with significantly different molecular weights are mixed with one crosslinker. [2]Silicone rubber can be divided into condensation type and addition type...... according to the curing reaction. The advantages of condensation silicones compared to addition are the relatively low cost, the curing rate largely being independent of temperature, the excellent adhesion, and the catalyst being nontoxic. [3]In this work, a series of bimodal condensation silicone...

  15. Silicon photonics III systems and applications

    CERN Document Server

    Lockwood, David

    2016-01-01

    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  16. Quantum Optomechanics with Silicon Nanostructures

    Science.gov (United States)

    Safavi-Naeini, Amir H.

    Mechanical resonators are the most basic and ubiquitous physical systems known. In on-chip form, they are used to process high frequency signals in every cell phone, television, and laptop. They have also been in the last few decades in different shapes and forms, a critical part of progress in quantum information sciences with kilogram scale mirrors for gravitational wave detection measuring motion at its quantum limits, and the motion of single ions being used to link qubits for quantum computation. Optomechanics is a field primarily concerned with coupling light to the motion of mechanical structures. This thesis contains descriptions of recent work with mechanical systems in the megahertz to gigahertz frequency range, formed by nanofabricating novel photonic/phononic structures on a silicon chip. These structures are designed to have both optical and mechanical resonances, and laser light is used to address and manipulate their motional degrees of freedom through radiation pressure forces. We laser cool these mechanical resonators to their ground states, and observe for the first time the quantum zero-point motion of a nanomechanical resonator. Conversely, we show that engineered mechanical resonances drastically modify the optical response of our structures, creating large effective optical nonlinearities not present in bulk silicon. We experimentally demonstrate aspects of these nonlinearities by proposing and observing ``electromagnetically induced transparency'' and light slowed down to 6 m/s, as well as wavelength conversion, and generation of nonclassical optical radiation. Finally, the application of optomechanics to longstanding problems in quantum and classical communications are proposed and investigated.

  17. Toward Directly-Deposited Optical Blocking Filters for High-performance, Back-illuminated Imaging X-ray Detectors

    Science.gov (United States)

    Bautz, Mark W.; Kissel, S. E.; Ryu, K.; Suntharalingam, V.

    2014-01-01

    Silicon X-ray detectors require optical blocking filters to prevent out-of-band (UV, visible and near-IR) radiation from corrupting the X-ray signal. Traditionally, blocking filters have been deposited on thin, free-standing membranes suspended over the detector. Free-standing filters are fragile, however, and in past instruments have required heavy and complex vacuum housings to protect them from acoustic loads during ground operations and launch. A directly-deposited blocking filter greatly simplifies the instrument and in principle permits better soft X-ray detection efficiency than a traditional free-standing filter. Directly-deposited filters have flown in previous generation instruments (e.g. the XMM/Newton Reflection Grating Spectrometer) but none has yet been demonstrated on a modern, high-performance back-illuminated X-ray CCD. We report here on the status of our NASA-funded Strategic Astrophysics Technology program to demonstrate such filters.

  18. Substrate tolerant direct block copolymer nanolithography

    DEFF Research Database (Denmark)

    Li, Tao; Wang, Zhongli; Schulte, Lars

    2016-01-01

    Block copolymer (BC) self-assembly constitutes a powerful platform for nanolithography. However, there is a need for a general approach to BC lithography that critically considers all the steps from substrate preparation to the final pattern transfer. We present a procedure that significantly...... plasma treatment enables formation of the oxidized PDMS hard mask, PS block removal and polymer or graphene substrate patterning....

  19. Pixel Decimation in Block Matching Techniques

    Directory of Open Access Journals (Sweden)

    D. Levicky

    2000-12-01

    Full Text Available Block motion estimation using full search algorithm is computationallyextensive. Previously proposed fast algorithms reduce the computationcost by limiting the number of locations searched. In this paper wepresent algorithms for block motion estimation that produce similarperformance to that full search algorithm. The algorithms are based onthe pixel decimation.

  20. Block Gas Sol Unit in Haderslev

    DEFF Research Database (Denmark)

    Vejen, Niels Kristian

    2000-01-01

    Investigation of a SDHW system based on a Block Gas Sol Unit from Baxi A/S installed by a consumer i Haderslev, Denmark.......Investigation of a SDHW system based on a Block Gas Sol Unit from Baxi A/S installed by a consumer i Haderslev, Denmark....