Sample records for bistable semiconductor laser

  1. Resonant activation in bistable semiconductor lasers

    International Nuclear Information System (INIS)

    Lepri, Stefano; Giacomelli, Giovanni


    We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in such optical systems

  2. Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

    International Nuclear Information System (INIS)

    Cotta, E A; Matinaga, F M


    We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

  3. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth


    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...... traveling-wave model. The dynamics of the low-frequency fluctuations are explained qualitatively in terms of bistability through an iterative description...

  4. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.


    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  5. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong


    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  6. Bistability in a laser with injected signal

    International Nuclear Information System (INIS)

    Dorobantu, I.A.; Vlad, V.I.; Ursu, I.


    A unified description of bistability is given in free running lasers, optical bistable devices, ring lasers and lasers with an injected signal (LIS). A general review of laser instabilities is also presented in the frame of the theory of elementary catastrophes, emphasizing the apparence of higher order catastrophes in the case of a LIS suggesting thus a possibility to devise from first principles the whole hierarchy of laser instabilities. Experimental results on the bistability in the polarisation of LIS are also discussed. (authors)

  7. Bistable laser device with multiple coupled active vertical-cavity resonators (United States)

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.


    A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

  8. Semiconductor Laser Measurements Laboratory (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  9. Magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity

    International Nuclear Information System (INIS)

    Zhang, Chuanyi; Zhang, Weifeng


    We theoretically study the magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity. A critical magnetic field is obtained, and the bistability appears if a magnetic field is greater than the critical value. For a positive energy detuning of the pump from the bare exciton polaritons, one bistability loop first emerges, then it divides into two loops, and finally one of them vanishes with the increasing magnetic field. This phenomenon originates from the magnetic-field modulated interactions for opposite spins. In the variational process, there are two important effects: one is a logic gate with a small variation of the excitation laser, and the other is a spin texture like skyrmion and this texture is periodic if the energy detuning varies periodically in real space, which is useful for designing the spin-dependent optoelectronic devices. - Highlights: • We study the bistability induced by a magnetic field in a microcavity. • One bistability loop can divide into two, and then the two loops return to one. • A spin texture like skyrmion and logic gate arise in the variation of bistability loop

  10. Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures (United States)

    Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.


    We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

  11. Bistable polarization switching in a continuous wave ruby laser (United States)

    Lawandy, N. M.; Afzal, R. Sohrab


    Bistability in the output power, polarization state, and mode volume of an argon-ion laser pumped single mode ruby laser at 6943 A has been observed. The laser operates in a radially confined mode which exhibits hysteresis and bistability only when the pump polarization is parallel to the c-axis.

  12. Bistable behaviour of biexciton population in a dense exciton-biexciton system in semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An.


    The steady state bistable behaviour of biexciton population in a dense exciton-biexciton semiconductor is considered. The intrinsic optical feedback is provided by the recombination mechanism. The exciton-biexciton and biexciton-biexciton interactions play the role of non-linearity responsible for biexciton bistability to occur. The conditions leading to the effect of bistability are obtained and two-parameter phase transition diagrams are drawn for both intensity and frequency bistable phenomena. (author)

  13. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W


    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  14. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel


    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  15. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui


    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  16. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro


    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  17. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej


    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  18. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.


    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  19. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    International Nuclear Information System (INIS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.


    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  20. Semiconductor film Cherenkov lasers (United States)

    Walsh, John E.


    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  1. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji


    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  2. Bistability in a complementary metal oxide semiconductor inverter circuit. (United States)

    Carroll, Thomas L


    Radiofrequency signals can disrupt the operation of low frequency circuits. A digital inverter circuit would seem to be immune to such disruption, because its output state usually jumps abruptly between 0 and 5 V. Nevertheless, when driven with a high frequency signal, the inverter can have two coexisting stable states (which are not at 0 and 5 V). Slow switching between these states (by changing the rf signal) will produce a low frequency signal. I demonstrate the bistability in a circuit experiment and in a simple model of the circuit.

  3. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry


    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  4. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.


    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  5. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.


    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  6. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati


    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  7. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.


    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  8. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.


    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  9. Optical bistability in the oscillation of an inhomogeneously broadened quasi-three-level laser

    International Nuclear Information System (INIS)

    Liu, Junhai; Tian, Xueping


    A theoretical modeling analysis is presented to study the optical bistability exhibited in the oscillation of an inhomogeneously broadened quasi-three-level laser. All the major characteristics of optical bistability depend on two normalized parameters, f and x a , which are defined by f = I sat,a /I sat,m and x a = 2α a0 p a /δ and are related to measurable properties of the laser medium. In comparison with the case of a homogeneously broadened laser, the essential condition for the occurrence of such bistability, f a /(x a + 1), turns out to be the same, whereas the intensities at the up- and down-thresholds are substantially increased and the bistability range is reduced. (paper)

  10. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji


    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  11. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji


    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  12. Bistable output from a coupled-resonator vertical-cavity laser diode

    International Nuclear Information System (INIS)

    Fischer, A. J.; Choquette, K. D.; Chow, W. W.; Allerman, A. A.; Geib, K.


    We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 μW to the electrical power applied to the top cavity. The bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point

  13. Bistable Output from a Coupled-Resonator Vertical-Cavity Laser Diode

    Energy Technology Data Exchange (ETDEWEB)



    The authors report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 {micro}W to the electrical power applied to the top cavity. Theoretical analysis suggests that the bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point.

  14. Bistable four-wave mixing response in a semiconductor quantum dot coupled to a photonic crystal nanocavity. (United States)

    Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun


    We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.

  15. Chaotic bursting in semiconductor lasers (United States)

    Ruschel, Stefan; Yanchuk, Serhiy


    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  16. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.


    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  17. Theoretical description of spontaneous pulse formation in a semiconductor microring laser

    International Nuclear Information System (INIS)

    Gil, L.; Columbo, L.


    We theoretically describe the spontaneous formation of stable pulses in a GaAs bulk semiconductor microring laser. These pulses are obtained without active or passive mode locking. We show that the parameter regime associated with their existence is limited on one side by the phase instability of the continuous-wave solution, and on the other side by the failure of Lamb's mode-locking criterion. Bistability between the continuous-wave solution and the spontaneous pulses is observed.

  18. Bistability of self-modulation oscillations in an autonomous solid-state ring laser

    International Nuclear Information System (INIS)

    Dudetskii, V Yu


    Bistable self-modulation regimes of generation for a ring YAG : Nd chip laser with the counterpropagating waves asymmetrically coupled via backward scattering are simulated numerically. Two branches of bistable self-modulation regimes of generation are found in the domain of the parametric resonance between the selfmodulation and relaxation oscillations. The self-modulation regimes observed in earlier experiments pertain to only one of the branches. Possible reasons for such a discrepancy are considered, related to the influence of technical and natural noise on the dynamics of solid-state ring lasers. (control of laser radiation parameters)

  19. Packaging of high power semiconductor lasers

    CERN Document Server

    Liu, Xingsheng; Xiong, Lingling; Liu, Hui


    This book introduces high power semiconductor laser packaging design. The characteristics and challenges of the design and various packaging, processing, and testing techniques are detailed by the authors. New technologies, in particular thermal technologies, current applications, and trends in high power semiconductor laser packaging are described at length and assessed.

  20. Measurement of spectral linewidths of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Du Xiaocheng; He Zhengchuan; Tang Sulan


    Based on the van der Pol equation, formulas describing the measurement of spectral linewidths of semiconductor lasers with the delayed self-heterodyne method were deduced and the influence of the spectral parameters on the measurement are given. Experimental results of single frequency semiconductor lasers are reported.

  1. Towards Laser Cooling of Semiconductors (United States)

    Hassani nia, Iman

    This dissertation reports on novel theoretical concepts as well as experimental efforts toward laser cooling of semiconductors. The use of quantum well system brings the opportunity to engineer bandstructure, effective masses and the spatial distribution of electrons and holes. This permits the incorporation of novel quantum mechanical phenomena to manipulate the temperature change of the material upon light-matter interaction. Inspired by the fact that Coulomb interaction can lead to blueshift of radiation after photo-absorption, the theory of Coulomb assisted laser cooling is proposed and investigated for the first time. In order to design suitable multiple quantum well (MQW) structures with Coulomb interaction a Poisson-Schrodinger solver was devised using MATLAB software. The software is capable of simulating all III-V material compositions and it results have been confirmed experimentally. In the next step, different MQW designs were proposed and optimized to exploit Coulomb interaction for assisting of optical refrigeration. One of the suitable designs with standard InGaAsP/InAlAs/InP layers was used to grow the MQW structures using metal organic vapor deposition (MOCVD). Novel techniques of fabrication were implemented to make suspended structures for detecting ultralow thermal powers. By fabricating accurate thermometers, the temperature changes of the device upon laser absorption were measured. The accurate measurement of the temperature encouraged us to characterize the electrical response of the device as another important tool to promote our understanding of the 4 underlying physical phenomena. This is in addition to the accurate spectral and time-resolved photoluminescence measurements that provided us with a wealth of information about the effects of stress, Auger recombination and excitonic radiance in such structures. As the future works, important measurements for finding the quantum efficiency of the devices via electrical characterization and

  2. Laser Cooling of 2-6 Semiconductors (United States)


    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  3. The transformation of optical bistability effect and of generated pulses in operation of a DFB laser with two sections

    International Nuclear Information System (INIS)

    Nguyen Van Phu; Dinh Van Hoang


    In this paper is presented the transformation of characteristics of optical bistability effect and of generated pulses in operation of a DFB laser with two sections. By solving the rate equations describing the operation of this laser the appearance of optical bistability effect in stationary regime and of short pulses in transient regime is obtained. With the variation of dynamical laser parameter we can evaluate the transformation indicated above. The method of examination used here is simple for determining the influence of any dynamical laser parameter on characteristics of optical bistability effect and generated pulses. (author)

  4. Study on guided waves in semiconductor lasers

    International Nuclear Information System (INIS)

    Pudensi, M.A.A.


    In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

  5. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S


    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  6. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove


    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  7. Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

    International Nuclear Information System (INIS)

    Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.


    A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

  8. Changes in the configuration of bistable centers in covalent semiconductors. Second-order phase transitions

    International Nuclear Information System (INIS)

    Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.


    A new radiation defect with a bistable configuration was discovered in gallium arsenide. It differed from similar known defects by an inversion of states caused by variation of temperature. It is shown that configuration-bistable modifications of the structure can be regarded as second-order phase transitions

  9. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Y.; Oldenbeuving, R.M.; Klein, E.J.; Lee, C.J.; Song, H.; Khan, M.R.H.; Offerhaus, H.L.; Van der Slot, P.J.M.; Boller, K.J.


    We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 µm wavelength range. The Si3N4/SiO2 glass waveguide circuit comprises two

  10. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Youwen; Oldenbeuving, Ruud; Klein, E.J.; Lee, Christopher James; Song, H.; Khan, M.R.H.; Offerhaus, Herman L.; van der Slot, Petrus J.M.; Boller, Klaus J.; Mackenzie, J.I.; Jelinkova, H.; Taira, T.; Ahmed, M.A.


    abstract .We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 μm wavelength range. The Si3N4/SiO2 glass waveguide circuit

  11. Semiconductor laser using multimode interference principle (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao


    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  12. Controllable optical bistability in photonic-crystal one-atom laser

    International Nuclear Information System (INIS)

    Guo Xiaoyong; Lue Shuchen


    We investigate the property of optical bistability in a photonic-crystal one-atom laser when nonlinear microcavity is present. The physical system consists of a coherently driven two-level light emitter strongly coupled to a high-quality microcavity which is embedded within a photonic crystal and another coherent probing field which has incident into the microcavity. In our case, the microcavity is fabricated by nonlinear material and placed as an impurity in photonic crystal. This study reveals that such a system can exhibit optical bistability. The dependence of threshold value and hysteresis loop on the photonic band gap of the photonic crystal, driving field Rabi frequency and dephasing processes, are studied. Our results clearly illustrate the ability to control optical bistability through suitable photonic-crystal architectures and external coherent driving field, and this study suggests that in a photonic-crystal nonlinear microcavity, the one-atom laser acts as an effective controllable bistable device in the design of all-light digital computing systems in the near future.

  13. Semiconductor Laser Tracking Frequency Distance Gauge (United States)

    Phillips, James D.; Reasenberg, Robert D.


    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  14. Teradiode's high brightness semiconductor lasers (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz


    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  15. Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth. (United States)

    Maeda, Y


    An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

  16. Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode. (United States)

    Maeda, Y


    Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

  17. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter


    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  18. Laser cooling in semiconductors (Conference Presentation) (United States)

    Zhang, Jun


    Laser cooling of semiconductor is very important topic in science researches and technological applications. Here we will report our progresses on laser cooling in semiconductors. By using of strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, we observe a net cooling by about 40 K starting from 290 kelvin with 514-nm pumping and about 15 K starting from100 K with 532-nm pumping in a semiconductor using group-II-VI cadmium sulphide nanobelts. We also discuss the thickness dependence of laser cooing in CdS nanobelts, a concept porotype of semiconductor cryocooler and possibility of laser cooling in II-VI semiconductor family including CdSSe、CdSe, CdSe/ZnTe QDs and bulk CdS et al., Beyond II-VI semiconductor, we will present our recent progress in laser cooling of organic-inorganic perovskite materials, which show a very big cooling power and external quantum efficiency in 3D and 2D case. Further more, we demonstrate a resolved sideband Raman cooling of a specific LO phonon in ZnTe, in which only one specific phonon resonant with exciton can be cooled or heated. In the end, we will discuss the nonlinear anti-Stokes Raman and anti-Stokes photoluminescence upcoversion in very low temperature as low as down to liquid 4.2 K. In this case, the anti-Stokes resonance induces a quadratic power denpendece of anti-Stokes Raman and anti-Stokes PL. We proposed a CARS-like process to explain it. This nonlinear process also provides a possible physics picture of ultra-low temperatures phonon assisted photoluminescence and anti-Stokes Raman process.

  19. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke


    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  20. Method and system for powering and cooling semiconductor lasers (United States)

    Telford, Steven J; Ladran, Anthony S


    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  1. Laser-based semiconductor fabrication

    International Nuclear Information System (INIS)

    Wachter, J.R.


    This paper discusses research that has concentrated on methods for direct processing of integrated circuits (IC's), such as defect reduction in epitaxial silicon, large grain polysilicon growth, laser-assisted etching and film deposition methods, and removal of dislocation networks

  2. Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

    KAUST Repository

    Alfaraj, Nasir


    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  3. The theory of stability, bistability, and instability in three-mode class-A lasers

    International Nuclear Information System (INIS)

    Jahanpanah, J; Rahdar, A A


    Instability is an inevitable and common problem in all different kinds of lasers when they are oscillating in both single-and multi-mode states. Here, the stability conditions are investigated for a three-mode class-A laser. A set of linear equations is derived for the stable oscillation of the cavity central mode together with its left and right adjacent longitudinal modes. The coefficient determinant of stability equations is Hermitian and equal to zero for the roots of two diagonal arrays. In other words, the novelty of our work is to expand the stability coefficient determinant in terms of main diagonal arrays rather than for one row or one column. These diagonal roots lead to two lower and upper boundary curves in the form of a bifurcation. The lower boundary curve mimics the single-mode laser and delimits the instability region (with no above-threshold oscillating mode) from the bistability region (with two above-threshold oscillating modes). The upper boundary curve mimics the two-mode laser and delimits the bistability region from the stability region, in which all three-longitudinal modes are simultaneously oscillating in the above-threshold state. (paper)

  4. Asymmetrically excited semiconductor injection laser

    International Nuclear Information System (INIS)

    Ladany, I.; Marinelli, D.P.; Kressel, H.; Cannuli, V.M.


    A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region

  5. Microresonators for organic semiconductor and fluidic lasers


    Vasdekis, Andreas E.


    This thesis describes a number of studies of microstructured optical resonators, designed with the aim of enhancing the performance of organic semiconductor lasers and exploring potential applications. The methodology involves the micro-engineering of the photonic environment in order to modify the pathways of the emitted light and control the feedback mechanism. The research focuses on designing new organic microstructures using established semi-analytical and numerical method...

  6. Squeezing in an injection-locked semiconductor laser (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.


    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  7. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years (United States)

    Calvez, S.; Adams, M. J.


    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  8. Bistable direction switching in an off-axis pumped continuous wave ruby laser (United States)

    Afzal, R. Sohrab; Lawandy, N. M.


    A report is presented of the observation of hysteretic bistable direction switching in a single-mode CW ruby laser system. This effect is only observed when the pump beam which is focused into the ruby rod is misaligned with respect to the rod end faces. At low pump powers, the ruby lases in a mode nearly collinear with the pump axis. At a higher pump power the ruby switches to a mode that is collinear with the rod end faces and preserves the original polarization. The effect is large enough to switch the beam by an angle equal to twice the diffraction angle. The observations show that under steady-state pumping, a CW ruby laser can exhibit bistable operation in its output direction and power. A calculation using the heat equation with two concentric cylinders with one as a heat source (pump laser) and the outer wall of the other held at 77 K, gives an increase in core temperature of about 0.01 K. Therefore, the increase in temperature is not large enough to change the index of refraction to account for such large macroscopic effects.

  9. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro


    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  10. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey


    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  11. Guiding effect of quantum wells in semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N


    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  12. Miniature thermoelectric coolers for semiconductor lasers

    International Nuclear Information System (INIS)

    Semenyuk, V.A.; Pilipenko, T.V.; Albright, G.C.; Ioffe, L.A.; Rolls, W.H.


    The problem of matching thermoelectric coolers and semiconductor lasers with respect to heat flow densities and electrical currents is discussed. It is shown that the solution of this problem is accomplished by the reduction of thermoelement dimensions to the submillimeter level. Assembled with extruded thermoelectric materials, miniature coolers with a thermoelement length as short as 0.1 mm and a cross section of 0.2x0.2 mm 2 are demonstrated. Using 0.5 mm thick aluminum ceramic plates, the overall height of these miniature coolers can be as low as 1.1 mm. The devices are designed for cooling and thermally stabilizing miniature optoelectronic elements, especially semiconductor lasers. The results of device testing over a wide range of temperature and heat loads are given. This novel approach in thermoelectric cooler design represents a new step in miniaturization and reduced current requirements, with little or no loss in maximum attainable temperature difference. A ΔT max of 68 K is demonstrated with input current of 200 mA. Due to the small thermoelement length, extremely large heat flow densities at cold junctions are practical (up to 100 W/cm 2 at ΔT=0), making these devices ideal for heat intensive local sources such as injection laser diodes. Due to the extremely small sizes, these coolers have a high speed of response where a ΔT of 35 K in specimens with the thermoelement length of 0.1 mm is approximately 150 milliseconds. These micro coolers are ideal for use within the semiconductor device housing and under conditions where limitations of power, size, and electrical current predominate. copyright 1995 American Institute of Physics

  13. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal


    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  14. Laser thermoreflectance for semiconductor thin films metrology (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.


    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  15. Novel concepts for designing semiconductor lasers (United States)

    Shchukin, V. A.; Ledentsov, N. N.; Maximov, M. V.; Gordeev, N. Yu; Shernyakov, Yu M.; Payusov, A. S.; Zhukov, A. E.


    We review novel concepts and demonstrate recent experimental data for edge- emitting semiconductor lasers with broad vertical waveguide. The ultimate case for waveguide extension in the vertical direction can be implemented by using the Tilted Wave Laser (TWL) approach. A TWL is composed of a thin active waveguide (typically 0.3-2 μm) optically coupled to a thick passive waveguide (10-150 μm). A TWL with a 26 μm-thick passive waveguide demonstrated low internal loss of 1.4 cm-1, maximum pulsed power 18 W and maximum CW power 4.7 W. Vertical far field of the TWL consists of two tilted narrow lobs of 2 degrees full width at half maximum each.

  16. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.


    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  17. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...

  18. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.


    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  19. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard


    We discuss the implications of using monolithically integrated semiconductor lasers in high capacity optical coherent links suitable for metro applications, where the integration capabilities of semiconductor lasers make them an attractive candidate to reduce transceiver cost. By investigating...... semiconductor laser frequency noise profiles we show that carrier induced frequency noise plays an important role in system performance. We point out that, when such lasers are employed, the commonly used laser linewidth fails to estimate system performance, and we propose an alternative figure of merit that we...... name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...

  20. Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance (United States)

    Chizhevsky, V. N.


    For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

  1. Hybrid optoelectronic device with multiple bistable outputs (United States)

    Costazo-Caso, Pablo A.; Jin, Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad


    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  2. What is refractive optical bistability

    International Nuclear Information System (INIS)

    Dzhehov, Tomislav


    The basic elements of the theory of refractive optical bistability, assuming mediums with linear absorption are given. Special attention is paid to bistable etalons of semiconductor materials an oxide glasses, since some of them are considered as promising components for optical bistability applications. The design optimization of such devices for minimum switching intensity is analyzed. Computer simulation of the transfer characteristic recording for two InSb etalons is presented. (author)

  3. Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions (United States)

    Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.


    A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

  4. Laser method for simulating the transient radiation effects of semiconductor (United States)

    Li, Mo; Sun, Peng; Tang, Ge; Wang, Xiaofeng; Wang, Jianwei; Zhang, Jian


    In this paper, we demonstrate the laser simulation adequacy both by theoretical analysis and experiments. We first explain the basic theory and physical mechanisms of laser simulation of transient radiation effect of semiconductor. Based on a simplified semiconductor structure, we describe the reflection, optical absorption and transmission of laser beam. Considering two cases of single-photon absorption when laser intensity is relatively low and two-photon absorption with higher laser intensity, we derive the laser simulation equivalent dose rate model. Then with 2 types of BJT transistors, laser simulation experiments and gamma ray radiation experiments are conducted. We found good linear relationship between laser simulation and gammy ray which depict the reliability of laser simulation.

  5. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers (United States)

    Pierścińska, D.


    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  6. Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian


    A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines .......A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines ....

  7. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi


    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss...... are analyzed. The nonlinear transparent waveguide, i.e. an amplifier saturated to the point where the stimulated emission balances the internal losses, is shown to be analytically solvable and is a convenient vehicle for gaining qualitative understanding of the dynamics of modulated semiconductor optical...

  8. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter


    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  9. Demonstration of a home projector based on RGB semiconductor lasers. (United States)

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang


    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3.

  10. Optical bistability and optical response of an infrared quantum dot hybridized to VO2 nanoparticle (United States)

    Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza


    In this work, we theoretically investigate optical bistability and optical response of a hybrid system consisting of semiconductor quantum dot (SQD) coupled with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) regime. The VO2 material exists in semiconductor and metallic phases below and above the critical temperature, respectively where the particle optical properties dramatically change during this phase transition. In our calculations a filling fraction factor controls the VO2NP phase transition when the hybrid system interacts with a laser field. We demonstrate that the switch-up threshold for optical bistability is strongly controlled by filling fraction without changing the structure of the hybrid system. Also, it is shown that, the threshold of optical bistability increases when the VO2NP phases changes from semiconductor to metallic phase. The presented results have the potential to be applied in designing optical switching and optical storage.

  11. Bifurcation analysis of a semiconductor laser with filtered optical feedback

    NARCIS (Netherlands)

    Erzgraeber, H.; Krauskopf, B.; Lenstra, D.


    We study the dynamics and bifurcations of a semiconductor laser with delayed filtered optical feedback, where a part of the output of the laser reenters after spectral filtering. This type of coherent optical feedback is more challenging than the case of conventional optical feedback from a simple

  12. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann


    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

  13. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le


    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  14. Noise equivalent circuit of a semiconductor laser diode


    Harder, Christoph; Katz, Joseph; Margalit, S.; Shacham, J.; Yariv, A.


    The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven laser diode are calculated as a function of bias current and frequency.

  15. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.


    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  16. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    International Nuclear Information System (INIS)

    Minaev, V P


    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  17. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    International Nuclear Information System (INIS)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.


    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  18. Ultrafast dynamics and laser action of organic semiconductors

    CERN Document Server

    Vardeny, Zeev Valy


    Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

  19. Resonator fiber optic gyro employing a semiconductor laser. (United States)

    Jin, Zhonghe; Yu, Xuhui; Ma, Huilian


    Resonator fiber optic gyro (RFOG) based on the Sagnac effect has the potential to achieve the inertial navigation system requirement with a short sensing coil. Semiconductor laser is one of the key elements for integration and miniaturization of the RFOG. In this paper, an RFOG employing a semiconductor laser is demonstrated. The model of the laser frequency noise induced error in the RFOG is described. To attenuate the laser frequency noise induced error, active frequency stabilization is applied. An online laser frequency noise observation is built, as a powerful optimum criterion for the loop parameters. Moreover, the laser frequency noise observation method is developed as a new measurement tool. With a fast digital proportional integrator based on a single field programmable gate array applied in the active stabilization loop, the laser frequency noise is reduced to 0.021 Hz (1σ). It is equivalent to a rotation rate of 0.07°/h, and close to the shot noise limit for the RFOG. As a result, a bias stability of open-loop gyro output is 9.5°/h (1σ) for the integration time 10 s in an hour observed in the RFOG. To the best of our knowledge, this result is the best long-term stability using the miniature semiconductor laser.

  20. Optical bistability in side-mode injection locked dual-mode Fabry-Pérot laser diode

    Directory of Open Access Journals (Sweden)

    Jian Wei Wu


    Full Text Available In this paper, optical bistability characteristics are demonstrated experimentally based on a dual-mode laser system comprising a multi-mode Fabry-Pérot laser diode (MMFP-LD and a built-in feedback cavity formed by a fiber facet. The results show that two lasing modes with frequency separation of ∼0.58 THz and comparable peak powers can be achieved by judicious adjustment of the bias current and the operating temperature of the laser chip, which has a peak fluctuation of less than ∼1 dBm over a measurement period of one hour. A combination of appropriate external injection power and wavelength detuning can result in remarkable optical bistability in two oscillation modes, in which the resulting contrast ratio between the unlocked and locked states can be up to 30 dB, and the corresponding hysteresis loop width can be changed by controlling the side-mode injection power and the wavelength detuning.

  1. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta


    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  2. Synchronization properties of chaotic semiconductor lasers and applications to encryption (United States)

    Mirasso, Claudio R.; Vicente, Raúl; Colet, Pere; Mulet, Josep; Pérez, Toni


    We review the main properties of two unidirectionally coupled single-mode semiconductor lasers ( master-slave configuration). Our analysis is based on numerical simulations of a rate equations model. The emitter, or master laser, is assumed to be an external-cavity single-mode semiconductor laser subject to optical feedback that operates in a chaotic regime. The receiver, or slave laser, is similar to the emitter but can either operate in a chaotic regime, as the emitter (closed loop configuration), or without optical feedback and consequently under CW when it is uncoupled (open loop configuration). This configuration is one of the most simple and useful configuration for chaos based communication systems and data encryption. To cite this article: C.R. Mirasso et al., C. R. Physique 5 (2004).

  3. All semiconductor laser Doppler anemometer at 1.55 microm. (United States)

    Hansen, René Skov; Pedersen, Christian


    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300 meters distance range. Especially, we will demonstrate that both the output power as well as the demanding coherence properties required from the laser source can be accomplished by an all semiconductor laser. Preliminary tests at a distance of 40 meters indicate a typical signal to noise ratio of 9 dB. This result is obtained at a clear day with an up-date rate of 12 Hz.

  4. Optical trapping with Bessel beams generated from semiconductor lasers

    International Nuclear Information System (INIS)

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U


    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  5. Dispersion-managed semiconductor mode-locked ring laser. (United States)

    Resan, Bojan; Archundia, Luis; Delfyett, Peter J; Alphonse, Gerard


    A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

  6. Optical bistability controlling light with light

    CERN Document Server

    Gibbs, Hyatt


    Optical Bistability: Controlling Light with Light focuses on optical bistability in nonlinear optical systems. Emphasis is on passive (non-laser) systems that exhibit reversible bistability with input intensity as the hysteresis variable, along with the physics and the potential applications of such systems for nonlinear optical signal processing. This book consists of seven chapters and begins with a historical overview of optical bistability in lasers and passive systems. The next chapter describes steady-state theories of optical bistability, including the Bonifacio-Lugiato model, as we

  7. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes (United States)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  8. Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers (United States)


    JOURNAL OF QUANTUM ELECTRONICS, VOL. , NO. , 1 Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers Dominic F...Siriani, Member, IEEE Abstract—A generalized theoretical formalism is derived that optimizes the doping profile of semiconductor diode lasers and amplifiers...Diode lasers, semiconductor lasers, semiconduc- tor optical amplifiers. I. INTRODUCTION ELECTRICALLY injected diode lasers have been demon-strated in many

  9. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  10. On the nonlinear theory of Fabry–Perot semiconductor lasers

    International Nuclear Information System (INIS)

    Noppe, Michael G


    Fundamentals of the nonlinear theory of Fabry–Perot semiconductor lasers have been developed, an integral part of which is natural linewidth theory. The formula for gain depending on the energy flux specifies the basic nonlinear effect in a laser. Necessary conditions for stimulated emission of the first and second kind are presented. Maxwell’s equations in the gain medium are applied to obtain equations for energy flux and for the description of non-linear phase effect. Based on the nonlinear theory, a number of experiments have been simulated; it indicates that the nonlinear theory is a new paradigm in laser theory. The nonlinear theory has provided recommendations for the development of lasers with improved properties, such as lasers with increased power and lasers with reduced natural linewidth. (paper)

  11. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten


    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of......, and ways to reduce high-frequency jitter is discussed. The main result of the thesis is a new design of the epitaxial structure that both enables simplified fabrication and improves the properties of monolithic lasers. 40 GHz monolithic lasers with record low jitter and high power is presented as well...

  12. Theoretical Study of Semiconductor Laser under Modulation (United States)

    Boukari, O.; Hassine, L.; Dherbecourt, P.; Latry, O.; Ketata, M.; Bouchriha, H.


    In this paper we present a description of the chirp induced in a direct modulated DFB laser. Our study is follows two different approaches. The first approach is based on a resolution of the rate equations of laser; the second, on a simulation of a heterodyne system with the Optisystem software. This study enables us to visualize the chirp in the RF field. We also characterize it according to the injection current i(t) parameters, such as the amplitude and the frequency of the modulation. The aim of our study is to choose the appropriate values of these parameters, in order to use the direct modulated DFB laser as an optical tunable source for Coherent Optical Frequency Domain Reflectometry technique (C-OFDR). We demonstrate that the optical frequency of these lasers can be controlled via the injection current i(t) and it can be linearly swept (chirped) over some tens of gigahertz.


    DEFF Research Database (Denmark)


    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...

  14. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...... and specifications. We have measured ultrafast gain and index dynamics of SOAs in pump-and-probe experiments applying 100 fs pulses and a heterodyne detection scheme, where both amplitude and phase of the probe pulses are determined. The gain depletion, and associated index change, and the subsequent recovery afte...

  15. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.


    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  16. Design and Characterisation of III-V Semiconductor Nanowire Lasers (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  17. Review on the dynamics of semiconductor nanowire lasers (United States)

    Röder, Robert; Ronning, Carsten


    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  18. Synchronous characterization of semiconductor microcavity laser beam. (United States)

    Wang, T; Lippi, G L


    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  19. Laser cooling of a semiconductor by 40 kelvin. (United States)

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua


    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  20. Noise equivalent circuit of a semiconductor laser diode (United States)

    Harder, C.; Margalit, S.; Yariv, A.; Katz, J.; Shacham, J.


    A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.

  1. Nonlinear gain suppression in semiconductor lasers due to carrier heating

    International Nuclear Information System (INIS)

    Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.


    We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

  2. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.


    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...... recently. These results give insight into the behavior observed on a short time-scale, but do not explain some of the pronounced features of the LFF seen for moderate feedback levels; namely the stepwise build-up and its characteristic time of about 15 steps close to the solitary laser threshold. We...

  3. Field-glass range finder with a semiconductor laser (United States)

    Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan


    This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

  4. Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Alharthi, S. S., E-mail:; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Hurtado, A. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Institute of Photonics, Physics Department, University of Strathclyde, Wolfson Centre, 106 Rottenrow East, Glasgow G4 0NW, Scotland (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)


    We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in future optical systems.

  5. Modes in light wave propagating in semiconductor laser (United States)

    Manko, Margarita A.


    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  6. Toward continuous-wave operation of organic semiconductor lasers. (United States)

    Sandanayaka, Atula S D; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya


    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture.

  7. Toward continuous-wave operation of organic semiconductor lasers (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya


    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  8. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit


    Cappuccio, Joseph C., Jr.


    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  9. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry. (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul


    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  10. Introduction to semiconductor lasers for optical communications an applied approach

    CERN Document Server

    Klotzkin, David J


    This textbook provides a thorough and accessible treatment of semiconductor lasers from a design and engineering perspective. It includes both the physics of devices as well as the engineering, designing, and testing of practical lasers. The material is presented clearly with many examples provided. Readers of the book will come to understand the finer aspects of the theory, design, fabrication, and test of these devices and have an excellent background for further study of optoelectronics. This book also: ·         Provides a multi-faceted approach to explaining the theories behind semiconductor lasers, utilizing mathematical examples, illustrations, and written theoretical presentations ·         Offers a balance of relevant optoelectronic topics, with specific attention given to distributed feedback lasers, growth techniques, and waveguide cavity design ·         Provides a summary of every chapter, worked examples, and problems for readers to solve ·         Empasizes...

  11. Delay induced high order locking effects in semiconductor lasers (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.


    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  12. Transient thermal analysis of semiconductor diode lasers under pulsed operation (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.


    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  13. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves (United States)


    AFRL-AFOSR-UK-TR-2017-0009 Semiconductor laser complex dynamics: from optical neurons to optical rogue waves Christina Masoller UNIVERSIDAD...11-02-2017 2. REPORT TYPE Final 3. DATES COVERED (From - To) 30 Sep 2014 to 29 Sep 2016 4. TITLE AND SUBTITLE Semiconductor laser complex dynamics...dynamics of semiconductor lasers with two main goals: i) to advance our understanding of nonlinear and stochastic phenomena and ii) to exploit the

  14. Metal-Semiconductor Reaction Phenomena and Microstructural Investigations of Laser Induced Regrowth of Silicon on Insulators. (United States)


    tion. 3 _.34 5.0 LASER ASSISTED DIFFUSION AND ACTIVATION OF TIN FROM AN SnO 2/SiO 2 SOURCE The diffusion of impurities into a semiconductor substrate...11111.0 2 25 l22 1111111 . 12L5 .4 51 METAL- SEMICONDUCTOR REACTION PHENOMENA AND MICROSTRUCTURAL INVESTIGATIONS OF LASER INDUCED REGROWTH OF SILICON... Semiconductor Reaction Phenomena and Final Report Microstructural Investigations of Laser-Induced _Jan. I_9 t0_njani92 _ Regrowth of Silicon on

  15. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...... application in MLLs. Improved QW laser performance was demonstrated using the asymmetric barrier layer approach. The analysis of the gain characteristics showed that the high population inversion beneficial for noise reduction cannot be achieved for 10 GHz QW MLLs and would have required lowering the modal....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...

  16. Fast physical random bit generation with chaotic semiconductor lasers (United States)

    Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter


    Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

  17. High-Speed and Low-Energy Flip-Flop Operation of Asymmetric Active-Multimode Interferometer Bi-Stable Laser Diodes

    DEFF Research Database (Denmark)

    Jiang, Haisong; Chaen, Yutaka; Hagio, Takuma


    High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.......High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses....

  18. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Podoskin, A. A., E-mail:; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)


    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  19. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.


    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  20. Antimicrobial efficacy of semiconductor laser irradiation on implant surfaces. (United States)

    Kreisler, Matthias; Kohnen, Wolfgang; Marinello, Claudio; Schoof, Jürgen; Langnau, Ernst; Jansen, Bernd; d'Hoedt, Bernd


    This study was conducted to investigate the antimicrobial effect of an 809-nm semiconductor laser on common dental implant surfaces. Sandblasted and acid-etched (SA), plasma-sprayed (TPS), and hydroxyapatite-coated (HA) titanium disks were incubated with a suspension of S. sanguinis (ATCC 10556) and subsequently irradiated with a gallium-aluminum-arsenide (GaAlAs) laser using a 600-microm optical fiber with a power output of 0.5 to 2.5 W, corresponding to power densities of 176.9 to 884.6 W/cm2. Bacterial reduction was calculated by counting colony-forming units on blood agar plates. Cell numbers were compared to untreated control samples and to samples treated with chlorhexidine digluconate (CHX). Heat development during irradiation of the implants placed in bone blocks was visualized by means of shortwave thermography. In TPS and SA specimens, laser irradiation led to a significant bacterial reduction at all power settings. In an energy-dependent manner, the number of viable bacteria was reduced by 45.0% to 99.4% in TPS specimens and 57.6% to 99.9% in SA specimens. On HA-coated disks, a significant bacterial kill was achieved at 2.0 W (98.2%) and 2.5 W (99.3%) only (t test, P < .05). For specimens treated with CHX, the bacterial counts were reduced by 99.99% in TPS and HA-coated samples and by 99.89% in SA samples. The results of the study indicate that the 809-nm semiconductor laser is capable of decontaminating implant surfaces. Surface characteristics determine the necessary power density to achieve a sufficient bactericidal effect. The bactericidal effect, however, was lower than that achieved by a 1-minute treatment with 0.2% CHX. The rapid heat generation during laser irradiation requires special consideration of thermal damage to adjacent tissues. No obvious advantage of semiconductor laser treatment over conventional methods of disinfection could be detected in vitro.

  1. Pulse properties of external cavity mode locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Kroh, Marcel; Mørk, Jesper


    The performance of an external-cavity mode-locked semiconductor laser is investigated both theoretically and experimentally. The optimization analysis focuses on the regimes of stable mode locking and the generation of sub-picosecond optical pulses. We demonstrate stable output pulses down to one...... picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model.We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation...

  2. Nonlinear Optics and Nonlinear Dynamics in Semiconductor Lasers Subject to External Optical Injection

    National Research Council Canada - National Science Library

    Simpson, Thomas


    ...) arrays, and analysis of chaotic dynamics that can be induced by optical injection. Under external optical injection, all semiconductor lasers tested, conventional edge emitting Fabry Perot laser diodes, VCSELs, and distributed feedback (DFB...

  3. Photon statistics and bunching of a chaotic semiconductor laser (United States)

    Guo, Yanqiang; Peng, Chunsheng; Ji, Yulin; Li, Pu; Guo, Yuanyuan; Guo, Xiaomin


    The photon statistics and bunching of a semiconductor laser with external optical feedback are investigated experimentally and theoretically. In a chaotic regime, the photon number distribution is measured and undergoes a transition from Bose-Einstein distribution to Poisson distribution with increasing the mean photon number. The second order degree of coherence decreases gradually from 2 to 1. Based on Hanbury Brown-Twiss scheme, pronounced photon bunching is observed experimentally for various injection currents and feedback strengths, which indicates the randomness of the associated emission light. Near-threshold injection currents and strong feedback strengths modify exactly the laser performance to be more bunched. The macroscopic chaotic dynamics is confirmed simultaneously by high-speed analog detection. The theoretical results qualitatively agree with the experimental results. It is potentially useful to extract randomness and achieve desired entropy source for random number generator and imaging science by quantifying the control parameters.

  4. The dynamical complexity of optically injected semiconductor lasers

    International Nuclear Information System (INIS)

    Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.


    This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

  5. Design and construct of a tunable semiconductor laser

    Directory of Open Access Journals (Sweden)

    J. Sabbaghzadeh


    Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

  6. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.


    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitte...

  7. Blue semiconductor laser research at the University of Florida (United States)

    Zory, P. S.


    In October 1988, a research program was initiated at the University of Florida (UF) with rhe goal of developing epitaxial diode structures capable of efficient light emission in the blue-green region of the electromagnetic spectrum. Devices such as semiconductor lasers fabricated from such material would be of considerable value in areas such as high density optical storage and high definition color displays. Although diode lasers have not yet been demonstrated, considerable progress has been made in showing that ZnSe is a very good candidate for room temperature diode laser action at 470 nm. For example, room temperature photo pumped lasing was demonstrated for the first time in epitaxial thin films of ZnSe grown by MBE and MOCVD on GaAs substrates. Although GaAs is very absorbing at 470 nm, the actual waveguide losses were small leading to the possibility of developing efficient, antiguide diode light emitters. Also demonstrated were ZnSe:N/ZnSe:Cl p-n homojunction light emitting diodes fabricated using a novel nitrogen atom beam doping procedure during MBE growth. These and other results achieved in the UF blue diode laser program will be reviewed.

  8. Timing and amplitude jitter in a gain-switched multimode semiconductor laser (United States)

    Wada, Kenji; Kitagawa, Naoaki; Matsukura, Satoru; Matsuyama, Tetsuya; Horinaka, Hiromichi


    The differences in timing jitter between a gain-switched single-mode semiconductor laser and a gain-switched multimode semiconductor laser are examined using rate equations that include Langevin noise. The timing jitter in a gain-switched multimode semiconductor laser is found to be effectively suppressed by a decrease in the coherence time of the amplified spontaneous emission (ASE) based on a broad bandwidth of multimode oscillation. Instead, fluctuations in the ASE cause amplitude jitter in the pulse components of the respective modes. A pulse train of gain-switched pulses from a multimode semiconductor laser with timing jitter is equivalently simulated by assuming a high spontaneous emission factor and a short coherence time of the ASE in the single-mode semiconductor laser rate equations.

  9. A design of atmospheric laser communication system based on semiconductor laser (United States)

    Rao, Jionghui; Yao, Wenming; Wen, Linqiang


    This paper uses semiconductor laser with 905nm wave length as light source to design a set of short-distance atmospheric laser communication system. This system consists of laser light source, launch modulation circuit, detector, receiving and amplifying circuit and so on. First, this paper analyzes the factors which lead to the decrease of luminous power of laser communication link under the applicable environment-specific sea level, then this paper elicits the relationship of luminous power of receiving optical systems and distance, slant angle and divergence angle which departures from the laser beam axis by using gaussian beam geometric attenuation mode. Based on the two reasons that PPM modulation theory limits the transmission rate of PPM modulation, that is, this paper makes an analysis on repetition frequency and pulse width of laser, makes theoretical calculation for typical parameters of semiconductor laser and gets the repetition frequency which is 10KHz, pulse width is50ns, the transmission rate is 71.66 Kb/s, at this time, modulation digit is 9; then this paper selects frame synchronization code of PPM modulation and provides implementation method for test; lastly, programs language based on Verilog, uses the FPGA development board to realize PPM modulation code and does simulation test and hardware test. This paper uses APD as the detector of receiving and amplifying circuit. Then this paper designs optical receiving circuit such as amplifying circuit, analog-digital conversion circuit based on the characteristics of receipt.

  10. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)


    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  11. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner


    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...

  12. Deep-red semiconductor monolithic mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A., E-mail: [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, H. L.; Pan, J. Q. [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang, X. L.; Cui, B. F. [Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124 (China); Ding, Y. [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)


    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  13. Complex photonics: Dynamics and applications of delay-coupled semiconductors lasers


    Soriano, Miguel C.; Garcia-Ojalvo, Jordi; Mirasso, Claudio R.; Fischer, Ingo


    Complex phenomena in photonics, in particular, dynamical properties of semiconductor lasers due to delayed coupling, are reviewed. Although considered a nuisance for a long time, these phenomena now open interesting perspectives. Semiconductor laser systems represent excellent test beds for the study of nonlinear delay-coupled systems, which are of fundamental relevance in various areas. At the same time delay-coupled lasers provide opportunities for photonic applications. In this review an i...

  14. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O' Malley, Martin W.; Zutavern, Fred J.


    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  15. Improved performance of semiconductor laser tracking frequency gauge (United States)

    Kaplan, D. M.; Roberts, T. J.; Phillips, J. D.; Reasenberg, R. D.


    We describe new results from the semiconductor-laser tracking frequency gauge, an instrument that can perform sub-picometer distance measurements and has applications in gravity research and in space-based astronomical instruments proposed for the study of light from extrasolar planets. Compared with previous results, we have improved incremental distance accuracy by a factor of two, to 0.9 pm in 80 s averaging time, and absolute distance accuracy by a factor of 20, to 0.17 μm in 1000 s. After an interruption of operation of a tracking frequency gauge used to control a distance, it is now possible, using a nonresonant measurement interferometer, to restore the distance to picometer accuracy by combining absolute and incremental distance measurements.

  16. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.


    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  17. Intrinsic Bistability and Critical Slowing in Tm3+/Yb3+ Codoped Laser Crystal with the Photon Avalanche Mechanism

    International Nuclear Information System (INIS)

    Li, Li; Li-Xue, Chen; Xin-Lu, Zhang


    We present theoretically a novel intrinsic optical bistability (IOB) in the Tm 3+ /Yb 3+ codoped system with a photon avalanche mechanism. Numerical simulations based on the rate equation model demonstrate distinct IOB hysteresis and critical slowing dynamics around the avalanche thresholds. Such an IOB characteristic in Tm 3+ /Yb 3+ codoped crystal has potential applications in solid-state bistable optical displays and luminescence switchers in visible-infrared spectra. (fundamental areas of phenomenology (including applications))

  18. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine (United States)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.


    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  19. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.


    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  20. Portable semiconductor laser system to stop internal bleeding (United States)

    Rediker, Robert H.; Durville, Frederic M.; Cho, George; Boll, James H.


    One significant cause of death during a sever trauma (gun wound or stab wound) is internal bleeding. A semiconductor diode laser system has been used in in vitro studies of cauterizing veins and arteries to stop bleeding. The conditions of laparoscopic surgery, including bleeding conditions (blood flow and pressure), are simulated. Results have been obtained both with and without using a hemostat (e.g., forceps) to temporarily stop the bleeding prior to the cautery. With the hemostat and a fiber-coupled 810-nm laser, blood vessels of up to 5 mm diameter were cauterized with an 8 W output from the fiber. Great cautions must be used in extrapolating from these in vitro results, since the exact conditions of bleeding in a living being are impossible to exactly reproduce in a laboratory in-vitro experiment. In a living being, when blood flow stops the cessation of nourishment to the vessels results in irreversible physiological changes. Also, the blood itself is different from blood in a living being because an anti-clotting agent (heparin) was added in order to inhibit the blood's natural tendency to coagulate.

  1. A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

    DEFF Research Database (Denmark)

    Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal


    A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser...

  2. Study of the effects of semiconductor laser irradiation on peripheral nerve injury (United States)

    Xiong, G. X.; Li, P.


    In order to study to what extent diode laser irradiation effects peripheral nerve injury, the experimental research was made on rabbits. Experimental results show that low-energy semiconductor laser can promote axonal regeneration and improve nervous function. It is also found that simultaneous exposure of the injured peripheral nerve and corresponding spinal segments to laser irradiation may achieve the most significant results.

  3. Optical label switching in telecommunication using semiconductor lasers, amplifiers and electro-absorption modulators

    DEFF Research Database (Denmark)

    Chi, Nan; Christiansen, Lotte Jin; Jeppesen, Palle


    We demonstrate all-optical label encoding and updating for an orthogonally labeled signal in combined IM/FSK modulation format utilizing semiconductor lasers, semiconductor optical amplifiers and electro-absorption modulators. Complete functionality of a network node including two-hop transmissio...

  4. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr


    .... To achieve this, an intracavity Pound-Drever-Hall technique was used on a 10 GHz harmonically mode-locked semiconductor ring laser and obtained a simultaneous optical frequency comb stabilization...

  5. Optical Bistability For Optical Signal Processing And Computing (United States)

    Peyghambarian, N.; Gibbs, H. M.


    In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.

  6. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    International Nuclear Information System (INIS)

    Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long


    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

  7. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    International Nuclear Information System (INIS)

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.


    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

  8. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project (United States)

    National Aeronautics and Space Administration — In this Phase II proposal we plan to design and develop a semiconductor, low phase/frequency noise, single-frequency, external cavity semiconductor laser (ECL)...

  9. Reversibly Bistable Flexible Electronics

    KAUST Repository

    Alfaraj, Nasir


    Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible and optically semitransparent. While maintaining large-scale production and prototyping rapidity, this flexible and translucent scheme demonstrates the potential to transform conventionally stiff electronic devices into thin and foldable ones without compromising long-term performance and reliability. In this work, we report on the fabrication and characterization of reversibly bistable flexible electronic switches that utilize flexible n-channel metal-oxide-semiconductor field-effect transistors. The transistors are fabricated initially on rigid (100) silicon substrates before they are peeled off. They can be used to control flexible batches of light-emitting diodes, demonstrating both the relative ease of scaling at minimum cost and maximum reliability and the feasibility of integration. The peeled-off silicon fabric is about 25 µm thick. The fabricated devices are transferred to a reversibly bistable flexible platform through which, for example, a flexible smartphone can be wrapped around a user’s wrist and can also be set back to its original mechanical position. Buckling and cyclic bending of such host platforms brings a completely new dimension to the development of flexible electronics, especially rollable displays.

  10. All semiconductor laser Doppler anemometer at 1.55 μm

    DEFF Research Database (Denmark)

    Hansen, Rene Skov; Pedersen, Christian


    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300...

  11. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut


    This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

  12. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian


    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...... based wind sensors have a strong potential in a number of applications such as wind turbine control, wind resource assessment, and micrometeorology (e.g. as alternative to the construction of meteorological towers with anemometers and wind vanes)....

  13. A study on the optical parts for a semiconductor laser module

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)


    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  14. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li


    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  15. Semiconductor laser with a birefringent external cavity for information systems with wavelength division multiplexing

    Energy Technology Data Exchange (ETDEWEB)

    Paranin, V D; Matyunin, S A; Tukmakov, K N [S.P. Korolev Samara State Aerospace University, Samara (Russian Federation)


    The spectrum of a semiconductor laser with a birefringent external Gires – Tournois cavity is studied. The generation of two main laser modes corresponding to the ordinary and extraordinary wave resonances is found. It is shown that the radiation spectrum is controlled with a high energy efficiency without losses for spectral filtration. The possibility of using two-mode lasing in optical communication systems with wavelength division multiplexing is shown. (control of laser radiation parameters)

  16. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru


    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  17. Trends in packaging of high power semiconductor laser bars

    Energy Technology Data Exchange (ETDEWEB)

    Solarz, R.W.; Emanuel, M.A.; Skidmore, J.A.; Freitas, B.L.; Krupke, W.F.


    Several different approaches to packaging high power diode laser bars for pumping solid state lasers or for direct diode laser applications are examined. The benefit and utility of each package is strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made.

  18. Study on the characteristic and application of DFB semiconductor lasers under optical injection for microwave photonics (United States)

    Pu, Tao; Wang, Wei wei


    In order to apply optical injection effect in Microwave Photonics system, The red-shift effect of the cavity mode of the DFB semiconductor laser under single-frequency optical injection is studied experimentally, and the red-shift curve of the cavity mode is measured. The wavelength-selective amplification property of the DFB semiconductor laser under multi-frequency optical injection is also investigated, and the gain curves for the injected signals in different injection ratios are measured in the experiment. A novel and simple structure to implement a single-passband MPF with wideband tunability based on the wavelength-selective amplification of a DFB semiconductor laser under optical injection is proposed and experimentally demonstrated. MPFs with center frequency tuned from 13 to 41 GHz are realized in the experiment. A wideband and frequency-tunable optoelectronic oscillator based on a directly modulated distributed feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. By optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency makes the loop oscillate without the necessary of the electrical filter. An experiment is performed; microwave signals with frequency tuned from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers.

  19. Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis

    International Nuclear Information System (INIS)

    Müller, M; Gault, B; Smith, G D W; Grovenor, C R M


    Atom probe tomography has recently experienced a renaissance, strongly promoted by the revival of pulsed laser atom probe. The technique is now widely employed to study semiconductor materials at the nanometre level. This paper summarises some aspects of the accuracy of pulsed laser atom probe relevant to semiconductor applications. It is shown that laser pulsing can reduce the lateral resolution due to thermally stimulated surface migration. Moreover, the commonly observed cluster ions can undergo field dissociation which results in an increased probability of ion loss due to pile-up effects at the detector. Field dissociation can also induce a new type of local magnification that increases spatial inaccuracy in the data reconstruction. These effects can be reduced by an appropriate choice of experimental parameters. Despite these difficulties, the atom probe technique can provide unparalleled insight into the nanoscale structure and chemistry of a wide range of semiconductor devices.

  20. 980-nm 14-pin butterfly module dual-channel CW QW semiconductor laser for pumping (United States)

    Deng, Yun; Yan, Changling; Qu, Yi; Li, Hui; Wang, Yuxia; Gao, Xin; Qiao, Zhongliang; Li, Mei; Qu, Bowen; Lu, Peng; Bo, Baoxue


    Nowadays, with its mature progress, the 790 nm - 1000 nm wavelength semiconductor laser is widely used in the fields of laser machining, laser ranging, laser radar, laser imaging, laser anti-counterfeit, biomedical and etc. Best of all, the 980 nm wavelength laser has its widespread application in the pumping source of Er3+ -doped fiber amplifier, optic fiber gyroscopes and other devices. The output wavelength of the fiber amplifier which takes the 980 nm wavelength laser as its pumping source is between 1060 nm and 1550 nm. This type of laser has its extremely wide range of applications in optical communication and other fields. Moreover, some new application domains keep constantly being developed. The semiconductor laser with the dual-channel ridge wave guide and the 980 nm emission wavelength is presented in this paper. In our work, we fabricated Lasers with the using of multi-quantum well (MQW) wafer grew by MBE, and the PL-wavelength of the MQW was 970 nm. The standard photofabrication method and the inductively coupled plasma (ICP) etching technology are adopted in the process of making dual-channel ridge wave guide with the width of 4 μm and height of 830 nm. In the state of continuous work at room temperature, the laser could output the single mode beam of 70 mW stably under the current of 100 mA. The threshold current of the laser diode is 17 mA and the slope efficiency is 0.89 W/A. The 3 dB spectrum bandwidth of the laser beam is 0.2 nm. This laser outputs its beam by a pigtail fiber on which Bragg grating for frequency stabilization is carved. The laser diode, the tail fiber, and the built-in refrigeration and monitoring modules are sealed in a 14-pin butterfly packaging. It can be used directly as the pumping source of Er3+ - doped fiber amplifier or optic fiber gyroscopes.

  1. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo


    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized.......We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  2. A review of energy bandgap engineering in III V semiconductor alloys for mid-infrared laser applications (United States)

    Yin, Zongyou; Tang, Xiaohong


    Semiconductor lasers emitting in mid-infrared (IR) range, 2-5 μm, have many important applications in semiconductor industries, military, environmental protection, telecommunications, molecular spectroscopy, biomedical surgery and researches. Different designs of the reactive regions in mid-IR laser structures have been investigated for achieving high performance devices. In this article, semiconductor mid-IR lasers with double heterostructure, quantum well, quantum cascade, quantum wire, quantum dash and quantum dot active regions have been reviewed. The performance of the lasers with these different active regions and the development of the newly emerging III-V-N materials for mid-IR applications have been discussed in details.

  3. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection


    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O


    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  4. Prospects and merits of metal-clad semiconductor lasers from nearly UV to far IR


    Khurgin, Jacob B.


    Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, wit...

  5. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating (United States)

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin


    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  6. Tests and Analysis of Electromagnetic Models for Semiconductor-Metal Quantum-Well Lasers (United States)

    Shih, Meng-Mu


    This work tests the proposed electromagnetic models for quantum-well lasers by using several materials of semiconductors and metals. Different combinations of semiconductors and metals can generate various wavelengths and mode-couplings in such semiconductor waveguide structures with built-in metal-gratings. The numerical results of these models are computed by the photonic approach and verified by the optical approach. Even for the weak mode-coupling cases, the numerical results computed by both approaches have close values. Numerical results with post-analysis can summarize how the key parameters, such as grating geometry, well thickness, and layer thickness, affect the mode-couplings. The above results can be further interpreted by physics intuition and fundamental concepts so as to provide insights into the modeling and design of lasers for more applications.

  7. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao


    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  8. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.


    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  9. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus


    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  10. Study on biological effect on mice and use safety of 830 nm semiconductor laser

    International Nuclear Information System (INIS)

    Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang


    Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

  11. Spatial and Spectral Brightness Enhancement of High Power Semiconductor Lasers (United States)

    Leidner, Jordan Palmer

    The performance of high-power broad-area diode lasers is inhibited by beam filamentation induced by free-carrier-based self-focusing. The resulting beam degradation limits their usage in high-brightness, high-power applications such as pumping fiber lasers, and laser cutting, welding, or marking. Finite-difference propagation method simulations via RSoft's BeamPROP commercial simulation suite and a custom-built MATLAB code were used for the study and design of laser cavities that suppress or avoid filamentation. BeamPROP was used to design a tapered, passive, multi-mode interference cavity for the creation of a self-phase-locking laser array, which is comprised of many single-mode gain elements coupled to a wide output coupler to avoid damage from local high optical intensities. MATLAB simulations were used to study the effects of longitudinal and lateral cavity confinement on lateral beam quality in conventional broad-area lasers. This simulation was expanded to design a laser with lateral gain and index prescription that is predicted to operate at or above state-of-the-art powers while being efficiently coupled to conventional telecom single-mode optical fibers. Experimentally, a commercial broad-area laser was coupled in the far-field to a single-mode fiber Bragg grating to provide grating-stabilized single-mode laser feedback resulting in measured spectral narrowing for efficient pump absorption. Additionally a 19 GHz-span, spatially resolved, self-heterodyne measurement was made of a broad-area laser to study the evolution/devolution of the mode content of the emitted laser beam with increasing power levels.

  12. Laser beam shaping optical system design methods and their application in edge-emitting semiconductor laser-based LIDAR systems (United States)

    Serkan, Mert

    LIDAR (Light Detection And Ranging) systems are employed for numerous applications such as remote sensing, military applications, optical data storage, display technology, and material processing. Furthermore, they are superior to other active remote sensing tools such as RADAR systems, considering their higher accuracy and more precise resolution due to their much shorter wavelengths and narrower beamwidth. Several types of lasers can be utilized as the radiation source of several LIDAR systems. Semiconductor laser-based LIDAR systems have several advantages such as low cost, compactness, broad range of wavelengths, and high PRFs (Pulse Repetition Frequency). However, semiconductor lasers have different origins and angles of divergence in the two transverse directions, resulting in the inherent astigmatism and elliptical beam shape. Specifically, elliptical beam shape is not desirable for several laser-based applications including LIDAR systems specifically designed to operate in the far-field region. In this dissertation, two mirror-based and two lens-based beam shapers are designed to circularize, collimate, and expand an edge-emitting semiconductor laser beam to a desired beam diameter for possible application in LIDAR systems. Additionally, most laser beams including semiconductor laser beams have Gaussian irradiance distribution. For applications that require uniform illumination of an extended target area, Gaussian irradiance distribution is undesirable. Therefore, a specific beam shaper is designed to transform the irradiance distribution from Gaussian to uniform in addition to circularizing, collimating, and expanding the semiconductor laser beam. For the design of beam shapers, aperture sizes of the surfaces are preset for desired power transmission and allowed diffraction level, surface parameters of the optical components and the distances between these surfaces are determined. Design equations specific to these beam shaping optical systems are

  13. A High Reliability Frequency Stabilized Semiconductor Laser Source Project (United States)

    National Aeronautics and Space Administration — NASA needs high stability laser source of 1W output power for Lidar applications. Princeton Optronics has developed ultra-stable, narrow linewidth diode pumped solid...

  14. Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I (United States)

    National Aeronautics and Space Administration — This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered ....

  15. Application of laser spot cutting on spring contact probe for semiconductor package inspection (United States)

    Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan


    A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

  16. Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser (United States)

    Holub, M.; Shin, J.; Saha, D.; Bhattacharya, P.


    A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.

  17. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate (United States)

    Mazur, Eric [Concord, MA; Shen, Mengyan [Arlington, MA


    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  18. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate (United States)

    Mazur, Eric; Shen, Mengyan


    The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  19. Doppler wind lidar using a MOPA semiconductor laser at stable single-frequency operation

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    A compact master-oscillator power-amplifier semiconductor laser (MOPA-SL) is a good candidate for a coherent light source (operating at 1550 nm) in a Doppler wind Lidar. The MOPA-SL requires two injection currents: Idfb for the distributed-feedback (DFB) laser section (master oscillator) and Iamp...... for the tapered amplifier section. The specified maximum current values are 0.7 A and 4.0 A for Idfb and Iamp. Although the MOPA-SL has been proven capable of producing single-frequency CW output beam, stable operation at this spectral condition has also been known to highly depend on the drive currents...... to the laser. This was done by observing the spectral characteristic of the laser using an optical spectrum at different drive current combinations. When using the laser for a Doppler wind Lidar application, a combination of (Idfb, Iamp) which is close to the center of an identified stable single...

  20. Bistable Reflective Etalon (BRET)

    National Research Council Canada - National Science Library

    Shellenbarger, Zane


    This project designed, fabricated, and characterized normal-incidence etalon structures at 1550 nm wavelength operation for application, as bistable elements, to photonic analog-to-digital conversion...

  1. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula


    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  2. Effects of gain medium parameters on the sensitivity of semiconductor ring laser gyroscope (United States)

    Khandelwal, Arpit; Hossein, Y. S.; Syed, Azeemuddin; Sayeh, M. R.; Nayak, Jagannath


    The semiconductor gain medium has rich non-linear dynamics and several internal parameters influence the generation and propagation of light through it. With the gain medium being an integral part of semiconductor ring laser gyroscope (SRLG) cavity, its parameters affect the overall performance of the gyro. The effect is further elevated in integrated SRLG due to stronger confinement of charge carriers and photons leading to a more intense interaction between them. In this paper, we evaluate the influence of semiconductor gain medium parameters such as gain saturation coefficient, linewidth, internal quantum efficiency etc. on the sensitivity of bulk fiber-optic SRLG. Ways of controlling these parameters and optimizing their values to enhance the performance of SRLG are also discussed.

  3. Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT) (United States)


    image of AlSb /GaSb superlattices produced prior to laser growth. InxGa1xSb structures are also produced to calibrate in- dium composition in the quantum...HR-XRD H2H rocking curves of AlSb /GaSb superlattices along with calculated diffraction pattern, represent- ing faithful reproduction material

  4. Theory of Passively Mode-Locked Photonic Crystal Semiconductor Lasers

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper


    We report the first theoretical investigation of passive mode-locking in photonic crystal mode-locked lasers. Related work has investigated coupled-resonator-optical-waveguide structures in the regime of active mode-locking [Opt. Express 13, 4539-4553 (2005)]. An extensive numerical investigation...

  5. Hair removal using an 810 nm gallium aluminum arsenide semiconductor diode laser: A preliminary study. (United States)

    Williams, R M; Gladstone, H B; Moy, R L


    Laser hair removal is a popular treatment method for removing unwanted hair. Several laser systems are available for laser hair removal. The gallium aluminum arsenide semiconductor diode (GAASD) laser is one of the newer laser modalities to be studied. To evaluate the efficacy of the GAASD laser system in removing unwanted hair. Twenty-six patients with brown or black hair growth were treated with the GAASD laser at fluences of 20-80 J/cm2. Hair regrowth was measured 4 weeks after the first treatment, 4 weeks after the second treatment, 4 weeks after the third treatment, and 4 weeks, 8 weeks, and 8 months after the fourth treatment. GAASD laser treatment resulted in hair growth delay in all treated regions. Repeated laser treatments did not produce an increased number of vellus hairs. The percentage of hair reduction fluctuated between 5% and 13% with the second or third treatment averaging the highest percent reduction. In all cases, the percentage of hair reduction of the treatment sites evaluated at 8 months after the fourth treatment was less than both the second and third treatments (highest average percent reduction) and the fourth (last) treatment.

  6. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments (United States)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas


    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  7. Bistable optical response of a nanoparticle heterodimer : Mechanism, phase diagram, and switching time

    NARCIS (Netherlands)

    Nugroho, Bintoro; Iskandar, Alexander; Malyshev, V.A.; Knoester, Jasper


    We conduct a theoretical study of the bistable optical response of a nanoparticle heterodimer comprised of a closely spaced semiconductor quantum dot and a metal nanoparticle. The bistable nature of the response results from the interplay between the quantum dot's optical nonlinearity and its

  8. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G


    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  9. Influence of Carrier Cooling on the Emission Dynamics of Semiconductor Microcavity Lasers (United States)

    Hilpert, M.; Hofmann, M.; Ellmers, C.; Oestreich, M.; Schneider, H. C.; Jahnke, F.; Koch, S. W.; Rühle, W. W.; Wolf, H. D.; Bernklau, D.; Riechert, H.


    We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.

  10. Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors (United States)


    N. Rubido, J. Tiana-Alsina, M. C. Torrent , and C. Masoller, Distinguishing signatures of deter- minism and stochasticity in spiking complex systems...Cohen, A. Aragoneses, D. Rontani, M. C. Torrent , C. Masoller and D. J. Gauthier, Multidimensional subwavelength position sensing using a...semiconductor laser with optical feedback, Opt. Lett. 38, 4331 (2013). Download 10. A. Aragoneses, T. Sorrentino, S. Perrone, D. J. Gauthier, M. C. Torrent and C

  11. Modelling laser-induced phase transformations in semiconductors

    Czech Academy of Sciences Publication Activity Database

    Gatskevich, E.; Přikryl, Petr; Ivlev, G.


    Roč. 76, č. 1 (2007), s. 65-72 ISSN 0378-4754. [MODELLING 2005. Plzeň, 04.07.2005-08.07.2005] R&D Projects: GA ČR GA201/04/1503 Institutional research plan: CEZ:AV0Z10190503 Keywords : laser-induced phase transitions * moving boundary problem * non-equilibrium phase changer Subject RIV: BA - General Mathematics Impact factor: 0.738, year: 2007

  12. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira


    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  13. Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers (United States)

    Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan


    A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

  14. Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers (United States)

    Junges, Leandro; Gallas, Jason A. C.


    The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang-Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay -time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail.

  15. Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser. (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy


    We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

  16. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors. (United States)

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A


    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. Improvements to tapered semiconductor MOPA laser design and testing (United States)

    Beil, James A.; Shimomoto, Lisa; Swertfeger, Rebecca B.; Misak, Stephen M.; Campbell, Jenna; Thomas, Jeremy; Renner, Daniel; Mashanovitch, Milan; Leisher, Paul O.; Liptak, Richard W.


    This paper expands on previous work in the field of high power tapered semiconductor amplifiers and integrated master oscillator power amplifier (MOPA) devices. The devices are designed for watt-class power output and single-mode operation for free-space optical communication. This paper reports on improvements to the fabrication of these devices resulting in doubled electrical-to-optical efficiency, improved thermal properties, and improved spectral properties. A newly manufactured device yielded a peak power output of 375 mW continuous-wave (CW) at 3000 mA of current to the power amplifier and 300 mA of current to the master oscillator. This device had a peak power conversion efficiency of 11.6% at 15° C, compared to the previous device, which yielded a peak power conversion efficiency of only 5.0% at 15° C. The new device also exhibited excellent thermal and spectral properties, with minimal redshift up to 3 A CW on the power amplifier. The new device shows great improvement upon the excessive self-heating and resultant redshift of the previous device. Such spectral improvements are desirable for free-space optical communications, as variation in wavelength can degrade signal quality depending on the detectors being used and the medium of propagation.

  18. Spontaneous exchange of leader-laggard relationship in mutually coupled synchronized semiconductor lasers. (United States)

    Kanno, Kazutaka; Hida, Takuya; Uchida, Atsushi; Bunsen, Masatoshi


    We investigate the instantaneous behavior of synchronized temporal wave forms in two mutually coupled semiconductor lasers numerically and experimentally. The temporal wave forms of two lasers are synchronized with a propagation delay time, with one laser oscillating in advance of the other, known as the leader-laggard relationship. The leader-laggard relationship can be determined by measuring the cross-correlation between the two temporal wave forms with the propagation delay time. The leader can be identified when the optical carrier frequency of the leader laser is higher than that of the other laser. However, spontaneous exchange between the leader and laggard lasers can be observed in low-frequency fluctuations by short-term cross-correlation measurements, even for a fixed initial optical frequency detuning. The spontaneous exchange of the leader-laggard relationship originates from alternation of partial optical frequency locking between the two lasers. This observation is analyzed using a phase space trajectory on steady-state solutions for mutually coupled lasers with optical frequency detuning.

  19. Subpicometer Length Measurement Using Semiconductor Laser Tracking Frequency Gauge (United States)

    Thapa, Rajesh; Phillips, James D.; Rocco, Emanuele; Reasenburg, Robert D.


    We have demonstrated heretofore unattained distance precision of 0:14pm (2pm) incremental and 14nm (2.9 micrometers) absolute in a resonant (nonresonant) interferometer at an averaging time of 1 s, using inexpensive telecommunications diode lasers. We have controlled the main source of error, that due to spurious reflection and the resulting amplitude modulation. In the resonant interferometer, absolute distance precision is well under lambda/6. Therefore, after an interruption, an absolute distance measurement can be used to return to the same interferometer order.

  20. Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

    DEFF Research Database (Denmark)

    An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel


    We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

  1. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.


    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  2. Flexible optical clock recovery utilizing a multi-function semiconductor fiber laser (United States)

    Feng, H.; Zhao, W.; Xie, X. P.; Qian, F. C.; Wang, W.; Huang, X.; Hu, H.


    We demonstrate a multi-function fiber laser based on cross-gain modulation in a semiconductor optical amplifier (SOA). Depending on the input signals, the fiber cavity can emit a continuous wave (CW) laser, mode-locked pulses, or act as a clock recovery device. With an extra CW light overcoming the pattern effect in the clock recovery process, a 10-GHz synchronous clock sequence with <0.1 power fluctuation and <120-fs timing jitter is extracted from the transmission return-to-zero data stream. We further analyze the recovered clock properties as a function of the input signal, and find that the clock recovery system presents good stability over a large range of input signal characteristics. The multi-function fiber laser exhibits the advantages of compact configuration and low cost, which is very convenient and attractive for optical communications and signal processing.

  3. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar


    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  4. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.


    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  5. Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo


    Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

  6. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy


    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  7. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)


    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  8. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Directory of Open Access Journals (Sweden)

    Min Zhao


    Full Text Available Objective: To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery. Methods: A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded. Results: The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05. The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05. The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05. The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05. The average healing time in the treatment group was significantly faster than that in the control group (P<0.05. Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  9. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter


    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...... parameter dependencies are simply explained by the calculated return-maps. Our approach partly decouples the slow and the fast time-scale behaviour. The latter is often described in terms of chaotic itinerary, but this does not provide an explanation for the low-frequency fluctuations themselves....

  10. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.


    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...... based on the Green's function method is used for that purpose. Simple expressions for the linewidth in the case of AR-coated SOA output facets are derived and simulation results are given in the case of an output facet with a non-vanishing reflectivity. It is found that optimal conditions for a narrow...

  11. Field performance of an all-semiconductor laser coherent Doppler lidar

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds...... measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable...

  12. Semiconductor laser having a non-absorbing passive region with beam guiding (United States)

    Botez, Dan (Inventor)


    A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

  13. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.


    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived...... and simulation results are given in the case of output facets with a nonvanishing reflectivity. A numerical model combining finite-element calculations in the transverse x-y plane and a longitudinal model based on the Green's function method is used for that purpose....

  14. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica


    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  15. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song


    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  16. Mode-locked semiconductor laser for long and absolute distance measurement based on laser pulse repetition frequency sweeping: a comparative study between three types of lasers (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.


    In this work we present a study on three types of semiconductor mode-locked lasers as possible sources for a high precision absolute distance metrology measurement concept based on pulse repetition frequency (PRF) sweep. In this work, we evaluated one vertical emission laser and two transversal emission sources. The topology of the gain element is quantum-well, quantum-dot and quantum-dash, respectively. Only the vertical emission laser has optical pump, whilst the others operate with electric pumping. The quantum-dash laser does not have a saturable absorber in its configuration but relies on a dispersion compensating fiber for generating pulses. The bottleneck of vertical emission laser is his high power density pump (4.5W/165μm), increasing the vulnerability of damaging the gain element. The other lasers, i.e., the single (quantum-dash) and double section (quantum-dot) lasers present good results either in terms of applicability to the metrology system or in terms of robustness. Using RF injection on the gain element, both lasers show good PRF stabilization results (better than σy(10ms) = 10-9 ) which is a requirement for the mentioned metrology technique.

  17. Laser-induced cluster-ions from thin foils of metals and semiconductors

    International Nuclear Information System (INIS)

    Fuerstenau, N.; Hillenkamp, F.


    Interaction of focused, very high-energy pulses of UV laser light of some 10 8 W cm -2 with thin foils of metals and semiconductors induces solid-gas phase-transitions and ionization of microvolumes of the target material. Mass-spectrometric analysis of the microplasma reveals singly ionized cluster-ions as final products of the interaction processes. Cluster-ion distributions are measured and compared with those obtained in thermal evaporation, high-frequency spark and SIMS experiments. The distributions are shown to be characteristic of the investigated material. While some of their features can be understood in terms of theories of cluster stability, other qualities, also observed in SIMS and evaporation experiments, are thought to be due to the partially non-equilibrium character of the solid-gas phase-transition. Furthermore, estimations concerning parameters of the laser-induced microplasma can be drawn from the distributions. (orig.)

  18. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers (United States)

    Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang


    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

  19. Comparative study of the performance of semiconductor laser based coherent Doppler lidars

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

  20. New semiconductor laser technology for gas sensing applications in the 1650nm range (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris


    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  1. GaN nanostructure-based light emitting diodes and semiconductor lasers. (United States)

    Viswanath, Annamraju Kasi


    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  2. Selective mode coupling in microring resonators for single mode semiconductor lasers (United States)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  3. Cubic zirconia as a high-quality facet coating for semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chin, A.K.; Satyanarayan, A.; Zarrabi, J.H.; Vetterling, W.


    In this paper we describe the properties of high-quality, semiconductor laser facet coatings based on yttria-stabilizied cubic zirconia (90-m% ZrO/sub 2//10-m% Y/sub 2/O/sub 3/). We have found that cubic zirconia films can be reproducibly deposited by electron-beam evaporation with an index of refraction of 1.98 at 6328 A, almost ideal for use as a single-layer antireflection coating for GaAs/GaAlAs-based lasers. ZrO/sub 2/ has a monoclinic crystal structure at room temperature, but changes to tetragonal, hexagonal, and cubic phases upon heating to higher temperatures. However, the addition of the Y/sub 2/O/sub 3/ stabilizes ZrO/sub 2/ in the cubic form, thus allowing electron-beam deposition of thin films of this material to be more controllable and reproducible without the usual addition of oxygen into the vacuum chamber during deposition. Preliminary aging tests of high-power GaAs/GaAlAs lasers show that cubic zirconia films suppress the photo-enhanced oxidation of laser facets that degrades device performance.

  4. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning


    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  5. Bifurcation to square-wave switching in orthogonally delay-coupled semiconductor lasers: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Masoller, C. [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, ES-08222 Terrassa, Barcelona (Spain); Sukow, D. [Institute for Cross-Disciplinary Physics and Complex Systems, Campus Universitat de les Illes Balears, ES-07122 Palma de Mallorca (Spain); Gavrielides, A. [Air Force Research Laboratory, AFRL/EOARD, 86 Blenheim Crescent, Ruislip Middlesex HA4 7HB (United Kingdom); Sciamanna, M. [Optics and Electronics (OPTEL) Research Group, Laboratoire Materiaux Optiques, Photonique et Systemes (LMOPS), Supelec, 2 Rue Edouard Belin, FR-57070 Metz (France)


    We analyze the dynamics of two semiconductor lasers with so-called orthogonal time-delayed mutual coupling: the dominant TE (x) modes of each laser are rotated by 90 deg. (therefore, TM polarization or y) before being coupled to the other laser. Although this laser system allows for steady-state emission in either one or in both polarization modes, it may also exhibit stable time-periodic dynamics including square waveforms. A theoretical mapping of the switching dynamics unveils the region in parameter space where one expects to observe long-term time-periodic mode switching. Detailed numerical simulations illustrate the role played by the coupling strength, the mode frequency detuning, or the mode gain to loss difference. We complement our theoretical study with several experiments and measurements. We present time series and intensity spectra associated with the characteristics of the square waves and other waveforms observed as a function of the strength of the delay coupling. The experimental observations are in very good agreement with the analysis and the numerical results.

  6. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    International Nuclear Information System (INIS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael


    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  7. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael


    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  8. High temperature semiconductor diode laser pumps for high energy laser applications (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel


    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  9. Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers (United States)

    Li, J.; Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)


    A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum

  10. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices (United States)

    Horn, Kevin M.


    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  11. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation (United States)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  12. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael


    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  13. Thermal stability of multi-longitudinal mode laser beating frequencies in hybrid semiconductor-fiber ring lasers (United States)

    Shebl, Ahmed; Hassan, Khaled; Al-Arifi, Fares; Al-Otaibi, Mohammed; Sabry, Yasser; Khalil, Diaa


    The temperature dependence of the beating frequencies in multi-longitudinal mode hybrid semiconductor-fiber based ring lasers is studied theoretically and experimentally. The variation of the beating frequency with temperature is found to be smaller for larger cavity length and lower beating order. Measured frequency variation as low as -0.24 Hz/°C is obtained for cavity length of 2.7 km. The stability of the frequency is evaluated using the Allan variance technique. The measurement is carried out for different beating frequency orders. The lowest order beating frequency has about 20x better long-term frequency stability than the beating frequency of the 100th order.

  14. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    Directory of Open Access Journals (Sweden)

    Medvid Artur


    Full Text Available Abstract On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity.

  15. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto


    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  16. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    International Nuclear Information System (INIS)

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P.


    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 μm complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate ω 0.5 filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging

  17. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL) (United States)

    McInerney, John G.


    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  18. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers (United States)

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang


    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley – Read – Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  19. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper


    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order...... to improve the mode-locking performance, such as reducing the pulsewidth and time-bandwidth product as much as possible. Timing jitter is determined by means of extensive numerical simulations of the model, demontrating that an external modulation is required in order to maintain moderate timing......-jitter and phase-noise levels at low frequencies. The effect of the driving conditions is investigated in order to achieve short pulses and low timing jitter. Our results are in qualitative agreement with reported experiments and predictions obtained from the master equation for mode-locking....

  20. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)


    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  1. Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

    Energy Technology Data Exchange (ETDEWEB)

    Tronciu, V Z; Mirasso, Claudio R; Colet, Pere [Instituto de Fisica Interdisciplinar y Sistemas Complejos (IFISC) CSIC-UIB, Campus Universitat de les Illes Balears, E-07122 Palma de Mallorca (Spain)], E-mail:


    We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed.

  2. Active layer position optimization in asymmetric AlGaInAs/AlGaAs semiconductor laser diode structures (United States)

    Abbasi, Seyed Peyman; Mahdieh, Mohammad Hossein


    In semiconductor lasers design, asymmetric structure can be used to improve laser characteristics. In this paper we proposed asymmetric AlGaInAs/AlGaAs structure for 808 nm laser diode to increase the n-cladding layer effect in beam propagation. In our proposed design, the active layer position in waveguide region was optimized for obtaining maximum optical power and minimum threshold current. The results show that the active layer position in waveguide related linearly to the asymmetric parameter. The results also show that in compare with usual structure, our proposed asymmetric structure can enhance the optical fiber coupling efficiency.

  3. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback.

    Directory of Open Access Journals (Sweden)

    Boon Leong Lan

    Full Text Available Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation.

  4. Key Topics in Producing New Ultraviolet Led and Laser Devices Based on Transparent Semiconductor Zinc Oxide

    International Nuclear Information System (INIS)

    Tuezemen, S.


    Recently, it has been introduced that ZnO as II-VI semiconductor is promising various technological applications, especially for optoelectronic short wavelength light emitting devices due to its wide and direct band gap profile. The most important advantage of ZnO over the other currently used wide band gap semiconductors such as GaN is that its nearly 3 times higher exciton binding energy (60 meV), which permits efficient excitonic emission at room temperature and above. As-grown ZnO is normally n-type because of the Zn-rich defects such as zinc interstitials (Zn i ) oxygen vacancies (Vo), natively acting as shallow donors and main source of n-type conductivity in as-grown material. Therefore, making p-type ZnO has been more difficult due to unintentional compensation of possible acceptors by these residual donors. In order to develop electro luminescent and laser devices based on the ultraviolet (UV) exciton emission of ZnO, it will be important to fabricate good p-n junctions. Attempts to observe p-type conductivity in ours and our collaborators' laboratories in USA, either by co-doping with N or tuning O pressure have been first successful achievements, resulting in hole concentrations up to 10 1 9 cm - 3 in reactively sputtered thin layers of ZnO. Moreover, in order to produce ZnO based quantum well lasers similar to the previously introduced n-AlGaAs/GaAs/p-AlGaAs structures; we have attempted to grow Zn 1 -xSn x O thin films to enlarge the band gap energy. An increase up to 170 meV has been observed in Zn 1 -xSn x O thin films and this is enough barrier to be able to trap electron-hole pairs in quantum well structures. As a result, two important key issues; p-type conductivity and enhancement of the band gap energy in order to step forward towards the production of electro luminescent UV LEDs and quantum well lasers have been investigated and will be presented in this study

  5. The unsaturated bistable stochastic resonance system. (United States)

    Zhao, Wenli; Wang, Juan; Wang, Linze


    We investigated the characteristics of the output saturation of the classical continuous bistable system (saturation bistable system) and its impact on stochastic resonance (SR). We further proposed a piecewise bistable SR system (unsaturated bistable system) and developed the expression of signal-to-noise ratio (SNR) using the adiabatic approximation theory. Compared with the saturation bistable system, the SNR is significantly improved in our unsaturated bistable SR system. The numerical simulation showed that the unsaturated bistable system performed better in extracting weak signals from strong background noise than the saturation bistable system.

  6. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier (United States)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin


    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  7. Various phenomena of self-mode-locked operation in optically pumped semiconductor lasers (United States)

    Tsou, C. H.; Liang, H. C.; Huang, K. F.; Chen, Y. F.


    This work presents several optical experiments to investigate the phenomenon of self-mode locking (SML) in optically pumped semiconductor lasers (OPSLs). First of all, we systematically explore the influence of high-order transverse modes on the SML in an OPSL with a linear cavity. Experimental results reveal that the occurrence of SML can be assisted by the existence of the first high-order transverse mode, and the laser is operated in a well-behaved SML state with the existence of the TEM0,0 mode and the first high-order transverse mode. While more high-order transverse modes are excited, it is found that the pulse train is modulated by more beating frequencies of transverse modes. The temporal behavior becomes the random dynamics when too many high-order transverse modes are excited. We observe that the temporal trace exhibits an intermittent mode-locked state in the absence of high-order transverse modes. In addition to typical mode-locked pulses, we originally observe an intriguing phenomenon of SML in an OPSL related to the formation of bright-dark pulse pairs. We experimentally demonstrated that under the influence of the tiny reflection feedback, the phase locking between lasing longitudinal modes can be assisted to form bright-dark pulse pairs in the scale of round-trip time. A theoretical model based on the multiple reflections in a phase-locked multi-longitudinal-mode laser is developed to confirm the formation of bright-dark pulse pairs.

  8. Controlling bistability by linear augmentation

    International Nuclear Information System (INIS)

    Sharma, Pooja Rani; Shrimali, Manish Dev; Prasad, Awadhesh; Feudel, Ulrike


    In many bistable oscillating systems only one of the attractors is desired to possessing certain system performance. We present a method to drive a bistable system to a desired target attractor by annihilating the other one. This shift from bistability to monostability is achieved by augmentation of the nonlinear oscillator with a linear control system. For a proper choice of the control function one of the attractors disappears at a critical coupling strength in an control-induced boundary crisis. This transition from bistability to monostability is demonstrated with two paradigmatic examples, the autonomous Chua oscillator and a neuronal system with a periodic input signal.

  9. Bistable Mechanisms for Space Applications. (United States)

    Zirbel, Shannon A; Tolman, Kyler A; Trease, Brian P; Howell, Larry L


    Compliant bistable mechanisms are monolithic devices with two stable equilibrium positions separated by an unstable equilibrium position. They show promise in space applications as nonexplosive release mechanisms in deployment systems, thereby eliminating friction and improving the reliability and precision of those mechanical devices. This paper presents both analytical and numerical models that are used to predict bistable behavior and can be used to create bistable mechanisms in materials not previously feasible for compliant mechanisms. Materials compatible with space applications are evaluated for use as bistable mechanisms and prototypes are fabricated in three different materials. Pin-puller and cutter release mechanisms are proposed as potential space applications.

  10. Bistable Mechanisms for Space Applications (United States)

    Zirbel, Shannon A.; Tolman, Kyler A.; Trease, Brian P.


    Compliant bistable mechanisms are monolithic devices with two stable equilibrium positions separated by an unstable equilibrium position. They show promise in space applications as nonexplosive release mechanisms in deployment systems, thereby eliminating friction and improving the reliability and precision of those mechanical devices. This paper presents both analytical and numerical models that are used to predict bistable behavior and can be used to create bistable mechanisms in materials not previously feasible for compliant mechanisms. Materials compatible with space applications are evaluated for use as bistable mechanisms and prototypes are fabricated in three different materials. Pin-puller and cutter release mechanisms are proposed as potential space applications. PMID:28030588

  11. Bistable microelectromechanical actuator (United States)

    Fleming, James G.


    A bistable microelectromechanical (MEM) actuator is formed on a substrate and includes a stressed membrane of generally rectangular shape that upon release assumes a curvilinear cross-sectional shape due to attachment at a midpoint to a resilient member and at opposing edges to a pair of elongate supports. The stressed membrane can be electrostatically switched between a pair of mechanical states having mirror-image symmetry, with the MEM actuator remaining in a quiescent state after a programming voltage is removed. The bistable MEM actuator according to various embodiments of the present invention can be used to form a nonvolatile memory element, an optical modulator (with a pair of mirrors supported above the membrane and moving in synchronism as the membrane is switched), a switchable mirror (with a single mirror supported above the membrane at the midpoint thereof) and a latching relay (with a pair of contacts that open and close as the membrane is switched). Arrays of bistable MEM actuators can be formed for applications including nonvolatile memories, optical displays and optical computing.

  12. Final report on LDRD project: Semiconductor surface-emitting microcavity laser spectroscopy for analysis of biological cells and microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; McDonald, A.E. [Sandia National Labs., Albuquerque, NM (United States). Nanostructure and Semiconductor Physics Dept.; Gourley, M.F. [Washington Hospital Center, DC (United States); Bellum, J. [Coherent Technologies, Boulder, CO (United States)


    This article discusses a new intracavity laser technique that uses living or fixed cells as an integral part of the laser. The cells are placed on a GaAs based semiconductor wafer comprising one half of a vertical cavity surface-emitting laser. After placement, the cells are covered with a dielectric mirror to close the laser cavity. When photo-pumped with an external laser, this hybrid laser emits coherent light images and spectra that depend sensitively on the cell size, shape, and dielectric properties. The light spectra can be used to identify different cell types and distinguish normal and abnormal cells. The laser can be used to study single cells in real time as a cell-biology lab-on-a-chip, or to study large populations of cells by scanning the pump laser at high speed. The laser is well-suited to be integrated with other micro-optical or micro-fluidic components to lead to micro-optical-mechanical systems for analysis of fluids, particulates, and biological cells.

  13. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji


    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  14. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.


    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance......Hz) the SSOA configuration can maintain a significantly higher bandwidth (~50% higher) compared to the MOPA architecture. Correspondingly narrower point spread functions can be generated in a Michelson interferometer....

  15. Monolithic integration of dual optical elements on high power semiconductor lasers (United States)

    Vaissie, Laurent

    This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform grating and a self-consistent model of the broad area active region. Improvement of the near-field intensity profile in good agreement with the FDTD model is demonstrated by varying the duty cycle from 20% to 55% and including the aspect ratio dependent etching (ARDE) for sub-micron features. The grating diffraction efficiency is estimated to be higher than 95% using a detailed analysis of the losses mechanisms of the device. The grating reflectivity is estimated to be as low as 2.10-4. The low reflectivity of the light extraction process is shown to increase the device efficiency and efficiently suppress lasing oscillations if both cleaved facets are replaced by grating couplers to produce 1.5W QCW with 11 nm bandwidth into a single spot a few mm above the device. Peak power in excess of 30W without visible COMD is achieved in this case. Having optimized, the light extraction process, we demonstrate the integration of three different optical functions on the substrate of the surface-emitting laser. First, a 40 level refractive microlens milled using focused ion beam shows a twofold reduction of the full-width half maximum 1mm above the device, showing potential for monolithic integration of coupling optics on the wafer. We then show that differential quantum efficiency of

  16. BRIEF COMMUNICATIONS: Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers (United States)

    Davydov, S. V.; Kulak, I. I.; Mit'kovets, A. I.; Stavrov, A. A.; Shkadarevich, A. P.; Yablonskiĭ, G. P.


    Lasing in crystals with narrow absorption bands was achieved for the first time by excitation with radiation emitted from electron-beam-pumped CdSxSe1-x semiconductor lasers. The lasing thresholds of YAG:Nd3+ and KGdW:Nd3+ crystals pumped with λ = 586 nm radiation were ~ 2 and ~ 1 mJ, respectively. The efficiency of conversion of the pump radiation into the output radiation in the KGdW:Nd3+ laser was 0.27%.

  17. Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Rapp, Ludovic, E-mail: [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Cibert, Christophe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nenon, Sebastien [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Alloncle, Anne Patricia [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nagel, Matthias [Empa, Swiss Federal Laboratories for Materials Testing and Reasearch, Laboratory for Functional Polymers, Uberlandstrasse 129, 8600 Duebendorf (Switzerland); Lippert, Thomas [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Videlot-Ackermann, Christine; Fages, Frederic [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Delaporte, Philippe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France)


    Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 {mu}s. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

  18. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri


    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.


    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM


    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  20. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)


    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  1. Distributed processing in bistable perception

    NARCIS (Netherlands)

    Knapen, T.H.J.


    A very incisive way of studying visual awareness and the mechanisms that underlie it, it to use bistable perception. In bistable perception, an observer's perceptual state alternates between one interpretation and its mutually exclusive counterpart while the stimulus remains the same. This gives us

  2. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser (United States)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.


    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  3. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.


    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  4. Tbits/s physical random bit generation based on mutually coupled semiconductor laser chaotic entropy source. (United States)

    Tang, Xi; Wu, Zheng-Mao; Wu, Jia-Gui; Deng, Tao; Chen, Jian-Jun; Fan, Li; Zhong, Zhu-Qiang; Xia, Guang-Qiong


    Using two mutually coupled semiconductor lasers (MC-SLs) outputs as chaotic entropy sources, a scheme for generating Tbits/s ultra-fast physical random bit (PRB) is demonstrated and analyzed experimentally. Firstly, two entropy sources originating from two chaotic outputs of MC-SLs are obtained in parallel. Secondly, by adopting multiple optimized post-processing methods, two PRB streams with the generation rate of 0.56 Tbits/s are extracted from the two entropy sources and their randomness are verified by using NIST Special Publication 800-22 statistical tests. Through merging the two sets of 0.56 Tbits/s PRB streams by an interleaving operation, a third set of 1.12 Tbits/s PRB stream, which meets all the quality criteria of NIST statistical tests, can be further acquired. Finally, after additionally taking into account the restriction of the min-entropy, the generation rate of two sets of PRB stream from the two entropy sources can still attain 0.48 Tbits/s, and then a third set of merging PRB stream is 0.96 Tbits/s. Moreover, for the sequence length of the order of 10 Gbits, the statistical bias and serial correlation coefficient of three sets of PRB streams are also analyzed.

  5. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L


    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  6. Thermal bistability-based method for real-time optimization of ultralow-threshold whispering gallery mode microlasers. (United States)

    Lin, Guoping; Candela, Y; Tillement, O; Cai, Zhiping; Lefèvre-Seguin, V; Hare, J


    A method based on thermal bistability for ultralow-threshold microlaser optimization is demonstrated. When sweeping the pump laser frequency across a pump resonance, the dynamic thermal bistability slows down the power variation. The resulting line shape modification enables a real-time monitoring of the laser characteristic. We demonstrate this method for a functionalized microsphere exhibiting a submicrowatt laser threshold. This approach is confirmed by comparing the results with a step-by-step recording in quasi-static thermal conditions.

  7. Quantifying complexity of the chaotic regime of a semiconductor laser subject to feedback via information theory measures (United States)

    Soriano, Miguel C.; Zunino, Luciano; Rosso, Osvaldo A.; Mirasso, Claudio R.


    The time evolution of the output of a semiconductor laser subject to optical feedback can exhibit high-dimensional chaotic fluctuations. In this contribution, our aim is to quantify the complexity of the chaotic time-trace generated by a semiconductor laser subject to delayed optical feedback. To that end, we discuss the properties of two recently introduced complexity measures based on information theory, namely the permutation entropy (PE) and the statistical complexity measure (SCM). The PE and SCM are defined as a functional of a symbolic probability distribution, evaluated using the Bandt-Pompe recipe to assign a probability distribution function to the time series generated by the chaotic system. In order to evaluate the performance of these novel complexity quantifiers, we compare them to a more standard chaos quantifier, namely the Kolmogorov-Sinai entropy. Here, we present numerical results showing that the statistical complexity and the permutation entropy, evaluated at the different time-scales involved in the chaotic regime of the laser subject to optical feedback, give valuable information about the complexity of the laser dynamics.

  8. [Application of "cold" laser (I.R. with semiconductors) as antalgic and anti-inflammatory therapy in osteo-articular and musculotendinous pathologies]. (United States)

    Petrachi, F; Matzuzzi, G


    The therapeutic efficacy of an I.R. laser appliance with semiconductors (GaAs) and a cooling device (cold laser) has been tried for osteo-articular ad muscle-tendinous painful pathologies. The result in almost all types of disorder has been satisfactory with diminution or disappearance of painful symptomatology and functional recovery.

  9. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices (United States)

    Horn, Kevin M [Albuquerque, NM


    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  10. Optimization of Bistable Viscoelastic Systems

    DEFF Research Database (Denmark)

    Jensen, Kristian Ejlebjærg; Szabo, Peter; Okkels, Fridolin


    driving pressure corresponding to the point of bistability, such that the effect is enhanced. The point of bistability is, however, not explicitly contained in the solution, so we opt for a heuristic approach based on the dissipation ratio between the asymmetric and unstable symmetric flow solutions. We...... find a design that significantly reduces the driving pressure required for bistability, and furthermore is in agreement with the approach followed by experimental researchers. Furthermore, by comparing the two asymmetric solutions, we succesfully apply the same approach to a problem with two fluids...

  11. Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers (United States)

    Zeng, Linfei

    This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or

  12. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten


    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  13. Applications of confocal laser scanning microscopy in research into organic semiconductor thin films

    DEFF Research Database (Denmark)

    Schiek, Manuela; Balzer, Frank


    At the center of opto-electronic devices are thin layers of organic semiconductors, which need to be sandwiched between planar electrodes. With the growing demand for opto-electronic devices now and in the future, new electrode materials are needed to meet the requirements of organic semiconductors...

  14. Nonlinear resonance phenomena of a doped fibre laser under cavity ...

    Indian Academy of Sciences (India)

    Harmonic resonance leads to period-1 bistability and hysteresis. Inside the period-2 sub-harmonic resonance region, the laser exhibits Feigenbaum sequence and generalized bistability. Keywords. Fibre lasers; chaos; modulation; nonlinear oscillators; optical bistability. PACS Nos 05.45.Ac; 42.55.Wd; 05.45.Tp; 42.55.Rz.

  15. A Miniature Coupled Bistable Vibration Energy Harvester

    International Nuclear Information System (INIS)

    Zhu, D; Arthur, D C; Beeby, S P


    This paper reports the design and test of a miniature coupled bistable vibration energy harvester. Operation of a bistable structure largely depends on vibration amplitude rather than frequency, which makes it very promising for wideband vibration energy harvesting applications. A coupled bistable structure consists of a pair of mobile magnets that create two potential wells and thus the bistable phenomenon. It requires lower excitation to trigger bistable operation compared to conventional bistable structures. Based on previous research, this work focused on miniaturisation of the coupled bistable structure for energy harvesting application. The proposed bistable energy harvester is a combination of a Duffing's nonlinear structure and a linear assisting resonator. Experimental results show that the output spectrum of the miniature coupled bistable vibration energy harvester was the superposition of several spectra. It had a higher maximum output power and a much greater bandwidth compared to simply the Duffing's structure without the assisting resonator

  16. Bistability of Cavity Magnon Polaritons (United States)

    Wang, Yi-Pu; Zhang, Guo-Qiang; Zhang, Dengke; Li, Tie-Fu; Hu, C.-M.; You, J. Q.


    We report the first observation of the magnon-polariton bistability in a cavity magnonics system consisting of cavity photons strongly interacting with the magnons in a small yttrium iron garnet (YIG) sphere. The bistable behaviors emerged as sharp frequency switchings of the cavity magnon polaritons (CMPs) and related to the transition between states with large and small numbers of polaritons. In our experiment, we align, respectively, the [100] and [110] crystallographic axes of the YIG sphere parallel to the static magnetic field and find very different bistable behaviors (e.g., clockwise and counter-clockwise hysteresis loops) in these two cases. The experimental results are well fitted and explained as being due to the Kerr nonlinearity with either a positive or negative coefficient. Moreover, when the magnetic field is tuned away from the anticrossing point of CMPs, we observe simultaneous bistability of both magnons and cavity photons by applying a drive field on the lower branch.

  17. Bistability of Cavity Magnon Polaritons. (United States)

    Wang, Yi-Pu; Zhang, Guo-Qiang; Zhang, Dengke; Li, Tie-Fu; Hu, C-M; You, J Q


    We report the first observation of the magnon-polariton bistability in a cavity magnonics system consisting of cavity photons strongly interacting with the magnons in a small yttrium iron garnet (YIG) sphere. The bistable behaviors emerged as sharp frequency switchings of the cavity magnon polaritons (CMPs) and related to the transition between states with large and small numbers of polaritons. In our experiment, we align, respectively, the [100] and [110] crystallographic axes of the YIG sphere parallel to the static magnetic field and find very different bistable behaviors (e.g., clockwise and counter-clockwise hysteresis loops) in these two cases. The experimental results are well fitted and explained as being due to the Kerr nonlinearity with either a positive or negative coefficient. Moreover, when the magnetic field is tuned away from the anticrossing point of CMPs, we observe simultaneous bistability of both magnons and cavity photons by applying a drive field on the lower branch.

  18. Portable semiconductor disk laser for in vivo tissue monitoring: a platform for the development of clinical applications (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo


    Long term in vivo observations at large penetration depths and minimum sample disturbance are some of the key factors that have enabled the study of different cellular and tissue mechanisms. The continuous optimization of these aspects is the main driving force for the development of advanced microscopy techniques such as those based on nonlinear effects. Its wide implementation for general biomedical applications is however, limited as the currently used nonlinear microscopes are based on bulky, maintenance-intensive and expensive excitation sources such as Ti:sapphire ultrafast lasers. We present the suitability of a portable (140x240x70 mm) ultrafast semiconductor disk laser (SDL) source, to be used in nonlinear microscopy. The SDL is modelocked by a quantum-dot semiconductor saturable absorber mirror (SESAM). This enables the source to deliver an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. The laser center wavelength (965 nm) virtually matches the two-photon absorption cross-section of the widely used Green Fluorescent Protein (GFP). This property greatly relaxes the required peak powers, thus maximizing sample viability. This is demonstrated by presenting two-photon excited fluorescence images of GFP labeled neurons and second-harmonic generation images of pharyngeal muscles in living C. elegans nematodes. Our results also demonstrate that this compact laser is well suited for efficiently exciting different biological dyes. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its widespread adoption in biomedical applications.

  19. Temporal nonlocality in bistable perception (United States)

    Atmanspacher, Harald; Filk, Thomas


    A novel conceptual framework for theoretical psychology is presented and illustrated for the example of bistable perception. A basic formal feature of this framework is the non-commutativity of operations acting on mental states. A corresponding model for the bistable perception of ambiguous stimuli, the Necker-Zeno model, is sketched and some empirical evidence for it so far is described. It is discussed how a temporal nonlocality of mental states, predicted by the model, can be understood and tested.

  20. Differential-phase-shift quantum key distribution experiment using fast physical random bit generator with chaotic semiconductor lasers. (United States)

    Honjo, Toshimori; Uchida, Atsushi; Amano, Kazuya; Hirano, Kunihito; Someya, Hiroyuki; Okumura, Haruka; Yoshimura, Kazuyuki; Davis, Peter; Tokura, Yasuhiro


    A high speed physical random bit generator is applied for the first time to a gigahertz clocked quantum key distribution system. Random phase-modulation in a differential-phase-shift quantum key distribution (DPS-QKD) system is performed using a 1-Gbps random bit signal which is generated by a physical random bit generator with chaotic semiconductor lasers. Stable operation is demonstrated for over one hour, and sifted keys are successfully generated at a rate of 9.0 kbps with a quantum bit error rate of 3.2% after 25-km fiber transmission.

  1. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.


    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  2. A Novel Laser Technology for Nanostructure Formation in Elementary Semiconductors: Quantum Confinement Effect


    Medvids, A; Onufrijevs, P; Dmitruk, M; Dmitruk, I; Pundyk, I


    Nowadays, nanostructures are one of the most investigated objects in solid-state physics, especially Quantum confinement effect in quantum dots, quantum wires and quantum wells. In the case of nanosize structures the energy band diagram of semiconductor has strongly changed. This leads to a crucial change of semiconductor properties such as: electrical (due to the change of free charge carrier concentration and electrons’ and holes’ mobility); optical (absorption coefficient, reflectivity in...

  3. The dynamics of the laser-induced metal-semiconductor phase transition of samarium sulfide (SmS)

    International Nuclear Information System (INIS)

    Kaempfer, Tino


    The present thesis is dedicated to the experimental study of the metal-semiconductor phase transition of samarium sulfide (SmS): Temperature- and time-resolved experiments on the characterization of the phase transition of mixed-valence SmS samples (M-SmS) are presented. The measurement of the dynamics of the laser-induced phase transition pursues via time-resolved ultrashort-time microscopy and by X-ray diffraction with sub-picosecond time resolution. The electronic and structural processes, which follow an excitation of M-SmS with infrared femtosecond laser pulses, are physically interpreted on the base of the results obtained in this thesis and model imaginations. [de

  4. Estimation of entropy rate in a fast physical random-bit generator using a chaotic semiconductor laser with intrinsic noise. (United States)

    Mikami, Takuya; Kanno, Kazutaka; Aoyama, Kota; Uchida, Atsushi; Ikeguchi, Tohru; Harayama, Takahisa; Sunada, Satoshi; Arai, Ken-ichi; Yoshimura, Kazuyuki; Davis, Peter


    We analyze the time for growth of bit entropy when generating nondeterministic bits using a chaotic semiconductor laser model. The mechanism for generating nondeterministic bits is modeled as a 1-bit sampling of the intensity of light output. Microscopic noise results in an ensemble of trajectories whose bit entropy increases with time. The time for the growth of bit entropy, called the memory time, depends on both noise strength and laser dynamics. It is shown that the average memory time decreases logarithmically with increase in noise strength. It is argued that the ratio of change in average memory time with change in logarithm of noise strength can be used to estimate the intrinsic dynamical entropy rate for this method of random bit generation. It is also shown that in this model the entropy rate corresponds to the maximum Lyapunov exponent.

  5. Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

    International Nuclear Information System (INIS)

    Abrarov, S.M.


    In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

  6. Perceptual incongruence influences bistability and cortical activation

    NARCIS (Netherlands)

    Brouwer, G.J.; Tong, F.; Hagoort, P.; van Ee, R.


    We employed a parametric psychophysical design in combination with functional imaging to examine the influence of metric changes in perceptual incongruence on perceptual alternation rates and cortical responses. Subjects viewed a bistable stimulus defined by incongruent depth cues; bistability

  7. GABA shapes the dynamics of bistable perception

    NARCIS (Netherlands)

    van Loon, A.M.; Knapen, T.; Scholte, H.S.; St. John-Saaltink, E.; Donner, T.H.; Lamme, V.A.F.


    Sometimes, perception fluctuates spontaneously between two distinct interpretations of a constant sensory input. These bistable perceptual phenomena provide a unique window into the neural mechanisms that create the contents of conscious perception. Models of bistable perception posit that mutual

  8. A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers (United States)

    Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun


    In this paper, a novel image encryption algorithm based on synchronization of physical random bit generated in a cascade-coupled semiconductor ring lasers (CCSRL) system is proposed, and the security analysis is performed. In both transmitter and receiver parts, the CCSRL system is a master-slave configuration consisting of a master semiconductor ring laser (M-SRL) with cross-feedback and a solitary SRL (S-SRL). The proposed image encryption algorithm includes image preprocessing based on conventional chaotic maps, pixel confusion based on control matrix extracted from physical random bit, and pixel diffusion based on random bit stream extracted from physical random bit. Firstly, the preprocessing method is used to eliminate the correlation between adjacent pixels. Secondly, physical random bit with verified randomness is generated based on chaos in the CCSRL system, and is used to simultaneously generate the control matrix and random bit stream. Finally, the control matrix and random bit stream are used for the encryption algorithm in order to change the position and the values of pixels, respectively. Simulation results and security analysis demonstrate that the proposed algorithm is effective and able to resist various typical attacks, and thus is an excellent candidate for secure image communication application.

  9. Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns Project (United States)

    National Aeronautics and Space Administration — While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources...

  10. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.


    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  11. Effects of a low-level semiconductor gallium arsenide laser on local pathological alterations induced by Bothrops moojeni snake venom. (United States)

    Aranha de Sousa, Elziliam; Bittencourt, José Adolfo Homobono Machado; Seabra de Oliveira, Nayana Keyla; Correia Henriques, Shayanne Vanessa; dos Santos Picanço, Leide Caroline; Lobato, Camila Pena; Ribeiro, José Renato; Pereira, Washington Luiz Assunção; Carvalho, José Carlos Tavares; da Silva, Jocivânia Oliveira


    Antivenom therapy has been ineffective in neutralizing the tissue damage caused by snakebites. Among therapeutic strategies to minimize effects after envenoming, it was hypothesized that a low level laser would reduce complications and reduce the severity of local snake venom effects. In the current study, the effect of a low-level semiconductor gallium arsenide (GaAs) laser on the local pathological alterations induced by B. moojeni snake venom was investigated. The experimental groups consisted of five male mice, each administered either B. moojeni venom (VB), B. moojeni venom + antivenom (VAV), B. moojeni venom + laser (VL), B. moojeni venom + antivenom + laser (VAVL), or sterile saline solution (SSS) alone. Paw oedema was induced by intradermal administration of 0.05 mg kg(-1) of B. moojeni venom and was expressed in mm of directly induced oedema. Mice received by subcutaneous route 0.20 mg kg(-1) of venom for evaluating nociceptive activity and the time (in seconds) spent in licking and biting the injected paw was taken as an indicator of pain response. Inflammatory infiltration was determined by counting the number of leukocytes present in the gastrocnemius muscle after venom injection (0.10 mg kg(-1)). For histological examination of myonecrosis, venom (0.10 mg kg(-1)) was administered intramuscularly. The site of venom injection was irradiated by the GaAs laser and some animals received antivenom intraperitoneally. The results indicated that GaAs laser irradiation can help in reducing some local effects produced by the B. moojeni venom in mice, stimulating phagocytosis, proliferation of myoblasts and the regeneration of muscle fibers.

  12. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    CERN Document Server

    Epperlein, Peter W


    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  13. Functionally rigid bistable [2]rotaxanes

    DEFF Research Database (Denmark)

    Nygaard, Sune; Leung, Ken C-F; Aprahamian, Ivan


    was investigated as a means to simplify both molecular structure and switching function previously observed in related bistable [2]rotaxanes with flexible spacers between their stations and incorporating a cyclobis(paraquat-p-phenylene) (CBPQT4+) ring. The nondegenerate MPTTF-NP switch was isolated as near isomer......-free bistable [2]rotaxane. Utilization of MPTTF removes the cis/trans isomerization that characterizes the tetrathiafulvalene (TTF) parent core structure. Furthermore, only one translational isomer is observed (> 95 ... component resides, to all intents and purposes, predominantly on the MPTTF unit in the ground state. As a consequence of these two effects, the assignment of NMR and UV-vis data is more simplified as compared to previous donor-acceptor bistable [2]rotaxanes. This development has not only allowed for much...

  14. Bistable Helmholtz solitons in cubic-quintic materials

    International Nuclear Information System (INIS)

    Christian, J. M.; McDonald, G. S.; Chamorro-Posada, P.


    We propose a nonlinear Helmholtz equation for modeling the evolution of broad optical beams in media with a cubic-quintic intensity-dependent refractive index. This type of nonlinearity is appropriate for some semiconductor materials, glasses, and polymers. Exact analytical soliton solutions are presented that describe self-trapped nonparaxial beams propagating at any angle with respect to the reference direction. These spatially symmetric solutions are, to the best of our knowledge, the first bistable Helmholtz solitons to be derived. Accompanying conservation laws (both integral and particular forms) are also reported. Numerical simulations investigate the stability of the solitons, which appear to be remarkably robust against perturbations

  15. Optical bistability in electrically coupled SOA-BJT devices (United States)

    Costanzo-Caso, Pablo A.; Jin, Yiye; Gehl, Michael; Granieri, Sergio; Siahmakoun, Azad


    A novel optical bistable device based on an electrically coupled semiconductor optical amplifier (SOA) and a bipolar juncture transistor (BJT) is proposed and experimentally demonstrated. The measured switching time is about 0.9-1.0 us, mainly limited by the electrical capacitance of the SOA and the parasitic inductance of the electrical connections. However, the effects of parasitic components can be reduced employing current electronic-photonic integration circuits (EPIC). Numerical simulations confirm that for capacitance values in tens of femtofarads switching speed can reach tens of GHz.

  16. Bistable microvalve and microcatheter system (United States)

    Seward, Kirk Patrick


    A bistable microvalve of shape memory material is operatively connected to a microcatheter. The bistable microvalve includes a tip that can be closed off until it is in the desired position. Once it is in position it can opened and closed. The system uses heat and pressure to open and close the microvalve. The shape memory material will change stiffness and shape when heated above a transition temperature. The shape memory material is adapted to move from a first shape to a second shape, either open or closed, where it can perform a desired function.

  17. Fiber transmission and generation of ultrawideband pulses by direct current modulation of semi-conductor lasers and chirp-to-intensity conversion

    DEFF Research Database (Denmark)

    Company Torres, Victor; Prince, Kamau; Tafur Monroy, Idelfonso


    Optical pulses generated by current modulation of semiconductor lasers are strongly frequency chirped. This effect has been considered pernicious for optical communications. We take advantage of this effect for the generation of ultrawideband microwave signals by using an optical filter to achieve...

  18. Conductors, semiconductors and insulators irradiated with short-wavelength free-electron laser

    Czech Academy of Sciences Publication Activity Database

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, Libor; Bittner, Michal; Létal, V.; Vorlíček, Vladimír; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E.; Schneidmiller, E.A.; Treusch, R.; Yurkov, M. V.


    Roč. 101, č. 4 (2007), 043107/1-043107/4 ISSN 0021-8979 R&D Projects: GA MŠk 1P04LA235; GA MŠk LC510; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : free-electron laser * extreme ultraviolet * ablation * laser-matter interaction Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.171, year: 2007

  19. Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser. (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Islamova, Elmira; Merget, Florian; Witzens, Jeremy


    Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

  20. Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtoseond and Picosecond Laser Techniques. (United States)


    High Density Electron-Hole Plasma in Ga0.5 n0.5P under High Power Picosecond Laser Pulse Excitation, H. Zarrabi and R. R. Alfano, SPIE (1983) (in press...Ga0 .5 In0 .5P, H. Zarrabi and R. R. Alfano Proceedings of Society of Photo-optical Engineers, San Diego, Ca., August 24, 1983. 9. Tunable Laser

  1. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb; Yariv


    A GaA1As semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. Also reported similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  2. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb, M.; Yariv, A.


    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  3. Self-induced frequency scanning and distributed bragg reflection in semiconductor lasers with phase-conjugate feedback (United States)

    Cronin-Golomb, Mark; Yariv, Amnon


    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  4. Compact, Low-Cost, Frequency-Locked Semiconductor Laser for Injection Seeding High Power Laser, Phase II (United States)

    National Aeronautics and Space Administration — This NASA Small Business Innovative Research Phase II project will develop a compact, low-cost, wavelength locked seed laser for injection locking high powered...

  5. Measurement of laser activated electron tunneling from semiconductor zinc oxide to adsorbed organic molecules by a matrix assisted laser desorption ionization mass spectrometer

    International Nuclear Information System (INIS)

    Zhong Hongying; Fu Jieying; Wang Xiaoli; Zheng Shi


    Highlights: ► Irradiation of photons with energies more than the band gap generates electron–hole pairs. ► Electron tunneling probability is dependent on the electron mobility. ► Tunneling electrons are captured by charge deficient atoms. ► Unpaired electrons induce cleavages of chemical bonds. - Abstract: Measurement of light induced heterogeneous electron transfer is important for understanding of fundamental processes involved in chemistry, physics and biology, which is still challenging by current techniques. Laser activated electron tunneling (LAET) from semiconductor metal oxides was observed and characterized by a MALDI (matrix assisted laser desorption ionization) mass spectrometer in this work. Nanoparticles of ZnO were placed on a MALDI sample plate. Free fatty acids and derivatives were used as models of organic compounds and directly deposited on the surface of ZnO nanoparticles. Irradiation of UV laser (λ = 355 nm) with energy more than the band gap of ZnO produces ions that can be detected in negative mode. When TiO 2 nanoparticles with similar band gap but much lower electron mobility were used, these ions were not observed unless the voltage on the sample plate was increased. The experimental results indicate that laser induced electron tunneling is dependent on the electron mobility and the strength of the electric field. Capture of low energy electrons by charge-deficient atoms of adsorbed organic molecules causes unpaired electron-directed cleavages of chemical bonds in a nonergodic pathway. In positive detection mode, electron tunneling cannot be observed due to the reverse moving direction of electrons. It should be able to expect that laser desorption ionization mass spectrometry is a new technique capable of probing the dynamics of electron tunneling. LAET offers advantages as a new ionization dissociation method for mass spectrometry.

  6. Flexible Bistable Cholesteric Reflective Displays (United States)

    Yang, Deng-Ke


    Cholesteric liquid crystals (ChLCs) exhibit two stable states at zero field condition-the reflecting planar state and the nonreflecting focal conic state. ChLCs are an excellent candidate for inexpensive and rugged electronic books and papers. This paper will review the display cell structure,materials and drive schemes for flexible bistable cholesteric (Ch) reflective displays.

  7. Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Si-Cong, E-mail:; Tong, Cun-Zhu, E-mail:; Zhang, Jin-Long; Shan, Xiao-Nan; Fu, Xi-Hong; Zeng, Yu-Gang; Qin, Li; Ning, Yong-Qiang [State Key laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Wan, Ren-Gang [School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062 (China)


    The optical bistability of a triangular quantum dot molecules embedded inside a unidirectional ring cavity is studied. The type, the threshold and the hysteresis loop of the optical bistability curves can be modified by the tunneling parameters, as well as the probe laser field. The linear and nonlinear susceptibilities of the medium are also studied to interpret the corresponding results. The physical interpretation is that the tunneling can induce the quantum interference, which modifies the linear and the nonlinear response of the medium. As a consequence, the characteristics of the optical bistability are changed. The scheme proposed here can be utilized for optimizing and controlling the optical switching process.

  8. Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules

    International Nuclear Information System (INIS)

    Tian, Si-Cong; Tong, Cun-Zhu; Zhang, Jin-Long; Shan, Xiao-Nan; Fu, Xi-Hong; Zeng, Yu-Gang; Qin, Li; Ning, Yong-Qiang; Wan, Ren-Gang


    The optical bistability of a triangular quantum dot molecules embedded inside a unidirectional ring cavity is studied. The type, the threshold and the hysteresis loop of the optical bistability curves can be modified by the tunneling parameters, as well as the probe laser field. The linear and nonlinear susceptibilities of the medium are also studied to interpret the corresponding results. The physical interpretation is that the tunneling can induce the quantum interference, which modifies the linear and the nonlinear response of the medium. As a consequence, the characteristics of the optical bistability are changed. The scheme proposed here can be utilized for optimizing and controlling the optical switching process

  9. Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers. (United States)

    Hintikka, Mikko; Hallman, Lauri; Kostamovaara, Juha


    Timing walk error in pulsed time-of-flight based laser range finding was studied using two different types of laser diode drivers. The study compares avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor switch based laser pulse drivers, both producing 1.35 ns current pulse length (full width at half maximum), and investigates how the slowly rising part of the current pulse of the avalanche BJT based driver affects the leading edge timing walk. The walk error was measured to be very similar with both drivers within an input signal dynamic range of 1:10 000 (receiver bandwidth of 700 MHz) but increased rapidly with the avalanche BJT based driver at higher values of dynamic range. The slowly rising part does not exist in the current pulse produced by the metal-oxide-semiconductor (MOS) based laser driver, and thus the MOS based driver can be utilized in a wider dynamic range.

  10. Packaging-induced failure of semiconductor lasers and optical telecommunications components

    Energy Technology Data Exchange (ETDEWEB)

    Sharps, J.A. [Corning Inc., NY (United States)


    Telecommunications equipment for field deployment generally have specified lifetimes of > 100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, the authors found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. They refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with high intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. The authors have found PIF is averted by packaging with free O{sub 2} and/or a getter material that sequesters organics.

  11. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.


    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  12. Experimental study of self-oscillation frequency in a semiconductor laser with optical injection

    International Nuclear Information System (INIS)

    MartInez-Zerega, B E; Jaimes-Reategui, R; Pisarchik, A N; Liu, J M


    Period-one and period-two oscillations in a diode laser subject to optical injection are experimentally investigated. The changes in the modulation frequency are studied as a function of the detuning frequency and the injection signal strength

  13. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers (United States)


    This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser. PMID:25147848

  14. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Moustafa Ahmed


    Full Text Available This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN. We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  15. Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity (United States)


    virtually the case for the DPCM . It shows the greatest potential for laser phasing, of any geometry. In that device, two independent pump beams are... DPCM in that respect, except that only a single pump beam is used. Thus its study falls under the self-imposed guidelines of applicability for laser...PPCM, as in its cousin the DPCM , the beams are constrained so that only a single grating is written. Consequently, the reflection intensity is stable [61

  16. Dynamic and Noise Properties of Tunable Multielectrode Semiconductor Lasers Including Spatial Hole Burning and Nonlinear Gain (United States)


    LASERS WITH UNIFORM INTENSITY :or instance, an increase in electron population due to DISTRIBUTION ýurrent modulation leads to an increase in the output...lasers 1281, the o the spontaneous emission results in a decrease of clcc- field intensity distribution is nearly uniform inside the :on population to...Optics (Academic. 1989). on optical fiber measuremcnts at the Guilin Insti- Dr. Agrawal is a fellow of the Optical Society of America and a member utuc

  17. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper


    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects.......We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  18. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    Energy Technology Data Exchange (ETDEWEB)

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.


    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  19. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo


    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  20. Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses (United States)

    Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.


    The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

  1. A broadband electromagnetic energy harvester with a coupled bistable structure

    International Nuclear Information System (INIS)

    Zhu, D; Beeby, S P


    This paper investigates a broadband electromagnetic energy harvester with a coupled bistable structure. Both analytical model and experimental results showed that the coupled bistable structure requires lower excitation force to trigger bistable operation than conventional bistable structures. A compact electromagnetic vibration energy harvester with a coupled bistable structure was implemented and tested. It was excited under white noise vibrations. Experimental results showed that the coupled bistable energy harvester can achieve bistable operation with lower excitation amplitude and generate more output power than both conventional bistable and linear energy harvesters under white noise excitation

  2. Jitter reduction by intracavity active phase modulation in a mode-locked semiconductor laser. (United States)

    Ozharar, Sarper; Ozdur, Ibrahim; Quinlan, Franklyn; Delfyett, Peter J


    We experimentally verify the theory of Haus et al. [IEEE J. Quantum Electron. 40, 41 (2004)] on the effects of timing jitter using intracavity phase modulation on the pulse train of a mode-locked laser. The theory is based on the solution of the Heisenberg-Langevin equation in the presence of dispersion and intracavity phase modulation. Using active intracavity phase modulation, we have reduced the timing jitter on a 10.24 GHz mode-locked diode laser by 50% from 304 to 150 fs integrated from 1 Hz to the Nyquist frequency of 5.12 GHz.

  3. Size effect caused significant reduction of thermal conductivity of GaAs/AlAs distributed Bragg reflector used in semiconductor disk laser (United States)

    Zhang, Peng; Zhu, Renjiang; Jiang, Maohua; Song, Yanrong; Zhang, Dingke; Cui, Yuting


    Thermal properties of the distributed Bragg reflector (DBR) used in the semiconductor gain element are crucial for the performance of a semiconductor disk laser (SDL). For the purpose of more reasonable semiconductor wafer design, so as to improve the thermal management of SDLs, accurate thermal conductivity value of a DBR is under considerable requirement. By the use of equilibrium molecular dynamics method, thermal conductivities of GaAs/AlAs DBRs, which are widely employed in 1 μm waveband SDLs, are calculated, and simulated results are compared with the reported experimental data. Influences of the layer thickness on the thermal conductivities of the DBR structure and the effects of Al composition on the AlxGa1-xAs ternary alloy values are focused and analyzed.

  4. A bistable mechanism for directional sensing

    International Nuclear Information System (INIS)

    Beta, C; Amselem, G; Bodenschatz, E


    We present a generic mechanism for directional sensing in eukaryotic cells that is based on bistable dynamics. As the key feature of this modeling approach, the velocity of trigger waves in the bistable sensing system changes its sign across cells that are exposed to an external chemoattractant gradient. This is achieved by combining a two-component activator/inhibitor system with a bistable switch that induces an identical symmetry breaking for arbitrary gradient input signals. A simple kinetic example is designed to illustrate the dynamics of a bistable directional sensing mechanism in numerical simulations

  5. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh


    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  6. Semiconductors Investigated by Time Resolved Spectroscopy Using Femtosecond and Picosecond Laser Technology. (United States)


    Measured by a Streak Camera, H. Zarrabi , R. R. Alfano, Phys. Rev. B32, 3947 (1985). Picosecond Pulses Produced by Mode Locking an Nd:Glass Laser with Kodak...Excitation" by Hassan J. Zarrabi , 1985, AFOSR General Optronics 3. "Picosecond and Steady State Spectroscopy of Defects in Semi-Insulating CdSe" by David L

  7. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao


    -wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  8. Tunable mode-locked semiconductor laser with Bragg mirror external cavity

    DEFF Research Database (Denmark)

    Yvind, Kresten; Jørgensen, T.; Birkedal, Dan


    We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have...

  9. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

    DEFF Research Database (Denmark)

    Ziegler, Mathias; Hempel, Martin; Larsen, Henning Engelbrecht


    The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns...

  10. Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Ziaja, B.


    Roč. 6, č. 9 (2016), 1-12, č. článku 238. ISSN 2076-3417 Institutional support: RVO:68378271 Keywords : free-electron lasers * transient optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.679, year: 2016

  11. Bistable diverter valve in microfluidics

    Czech Academy of Sciences Publication Activity Database

    Tesař, Václav; Bandulasena, H.C.H.


    Roč. 50, č. 5 (2011), s. 1225-1233 ISSN 0723-4864 R&D Projects: GA ČR GA101/07/1499; GA AV ČR IAA200760705 Institutional research plan: CEZ:AV0Z20760514 Keywords : fluidics * bistable diverter valves * pressure-driven microfluidics Subject RIV: BK - Fluid Dynamics Impact factor: 1.735, year: 2011

  12. Bistable dynamics of a levitated nanoparticle (Presentation Recording) (United States)

    Ricci, Francesco; Spasenovic, M.; Rica, Raúl A.; Novotny, Lukas; Quidant, Romain


    resonance and sensory information processing: a tutorial and review of application" Clinical neurophysiology 115 (2004) 267 [3] M. Platkov, and M. Gruebele, "Periodic and stochastic thermal modulation of protein folding kinetics" J. Chem. Phys. 141 (2014) 035103 [4] T. Tanabe, M. Notomi, S. Mitsugi, A. Shinya and E. Kuramochi. "Fast bistable all-optical switch and memory on a silicon photonic crystal on-chip". Opt. Lett., 30 (2005) 2575 [5] R. L. Badzey and P. Mohanty. "Coherent signal amplification in bistable nanomechanical oscillators by stochastic resonance" Nature, 437 (2005) 995 [6] W. J. Venstra, H. J. R. Westra, and H. S. J. van der Zant. "Stochastic switching of cantilever motion," Nature Communications, 4 (2013) 3624 [7] J. Gieseler, B. Deutsch, R. Quidant, and L. Novotny "Subkelvin parametric feedback cooling of a Laser-Trapped nanoparticle" Phys. Rev. Lett. 109 (2012) 103603 [8] J. Gieseler, M. Spasenović, L. Novotny, and R. Quidant, "Nonlinear Mode Coupling and Synchronization of a Vacuum-Trapped Nanoparticle," Phys. Rev. Lett. 112 (2014) 103603

  13. Bistability in biochemical signaling models. (United States)

    Sobie, Eric A


    This Teaching Resource provides lecture notes, slides, and a student assignment for a two-part lecture on the principles underlying bistability in biochemical signaling networks, which are illustrated with examples from the literature. The lectures cover analog, or graded, versus digital, all-or-none, responses in cells, with examples from different types of biological processes requiring each. Rate-balance plots are introduced as a method for determining whether generic one-variable systems exhibit one or several stable steady states. Bifurcation diagrams are presented as a more general method for detecting the presence of bistability in biochemical signaling networks. The examples include an artificial toggle switch, the lac operon in bacteria, and the mitogen-activated protein kinase cascade in both Xenopus oocytes and mammalian cells. The second part of the lecture links the concepts of bistability more closely to the mathematical tools provided by dynamical systems analysis. The examples from the first part of the lecture are analyzed with phase-plane techniques and bifurcation analysis, using the scientific programming language MATLAB. Using these programs as a template, the assignment requires the students to implement a model from the literature and analyze the stability of this model's steady states.

  14. Brain networks underlying bistable perception. (United States)

    Baker, Daniel H; Karapanagiotidis, Theodoros; Coggan, David D; Wailes-Newson, Kirstie; Smallwood, Jonathan


    Bistable stimuli, such as the Necker Cube, demonstrate that experience can change in the absence of changes in the environment. Such phenomena can be used to assess stimulus-independent aspects of conscious experience. The current study used resting state functional magnetic resonance imaging (rs-fMRI) to index stimulus-independent changes in neural activity to understand the neural architecture that determines dominance durations during bistable perception (using binocular rivalry and Necker cube stimuli). Anterior regions of the Superior Parietal Lobule (SPL) exhibited robust connectivity with regions of primary sensorimotor cortex. The strength of this region's connectivity with the striatum predicted shorter dominance durations during binocular rivalry, whereas its connectivity to pre-motor cortex predicted longer dominance durations for the Necker Cube. Posterior regions of the SPL, on the other hand, were coupled to associative cortex in the temporal and frontal lobes. The posterior SPL's connectivity to the temporal lobe predicted longer dominance during binocular rivalry. In conjunction with prior work, these data suggest that the anterior SPL contributes to perceptual rivalry through the inhibition of incongruent bottom up information, whereas the posterior SPL influences rivalry by supporting the current interpretation of a bistable stimulus. Our data suggests that the functional connectivity of the SPL with regions of sensory, motor, and associative cortex allows it to regulate the interpretation of the environment that forms the focus of conscious attention at a specific moment in time. Copyright © 2015. Published by Elsevier Inc.

  15. Tunable THz Generation by the Interaction of a Super-luminous Laser Pulse with Biased Semiconductor Plasma

    International Nuclear Information System (INIS)

    Papadopoulos, K.; Zigler, A.


    Terahertz (THz) radiation is electromagnetic radiation in the range between several hundred and a few thousand GHz. It covers the gap between fast-wave electronics (millimeter waves) and optics (infrared). This spectral region offers enormous potential for detection of explosives and chemical/biological agents, non-destructive testing of non-metallic structural materials and coatings of aircraft structures, medical imaging, bio-sensing of DNA stretching modes and high-altitude secure communications. The development of these applications has been hindered by the lack of powerful, tunable THz sources with controlled waveform. The need for such sources is accentuated by the strong, but selective absorption of THz radiation during transmission through air with high vapor content. The majority of the current experimental work relies on time-domain spectroscopy using fast electrically biased photoconductive sources in conjunction with femto-second mode-locked Ti:Sapphire lasers. These sources known as Large Aperture Photoconductive Antennas (LAPA) have very limited tunability, relatively low upper bound of power and no bandwidth control. The paper presents a novel source of THz radiation known as Miniature Photoconductive Capacitor Array (MPCA). Experiments demonstrated tunability between .1 - 2 THz, control of the relative bandwidth Δf/f between .5-.01, and controlled pulse length and pulse waveform (temporal shape, chirp, pulse-to-pulse modulation etc.). Direct scaling from the current device indicates efficiency in excess of 30% at 1 THz with 1/f2 scaling at higher frequencies, peak power of 100 kW and average power between .1-1 W. The physics underlying the MPCA is the interaction of a super-luminous ionization front generated by the oblique incidence of a Ti:Sapphire laser pulse on a semiconductor crystal (ZnSe) biased with an alternating electrostatic field, similar to that of a frozen wave generator. It is shown theoretically and experimentally that the

  16. The smallest chemical reaction system with bistability

    Directory of Open Access Journals (Sweden)

    Wilhelm Thomas


    Full Text Available Abstract Background Bistability underlies basic biological phenomena, such as cell division, differentiation, cancer onset, and apoptosis. So far biologists identified two necessary conditions for bistability: positive feedback and ultrasensitivity. Results Biological systems are based upon elementary mono- and bimolecular chemical reactions. In order to definitely clarify all necessary conditions for bistability we here present the corresponding minimal system. According to our definition, it contains the minimal number of (i reactants, (ii reactions, and (iii terms in the corresponding ordinary differential equations (decreasing importance from i-iii. The minimal bistable system contains two reactants and four irreversible reactions (three bimolecular, one monomolecular. We discuss the roles of the reactions with respect to the necessary conditions for bistability: two reactions comprise the positive feedback loop, a third reaction filters out small stimuli thus enabling a stable 'off' state, and the fourth reaction prevents explosions. We argue that prevention of explosion is a third general necessary condition for bistability, which is so far lacking discussion in the literature. Moreover, in addition to proving that in two-component systems three steady states are necessary for bistability (five for tristability, etc., we also present a simple general method to design such systems: one just needs one production and three different degradation mechanisms (one production, five degradations for tristability, etc.. This helps modelling multistable systems and it is important for corresponding synthetic biology projects. Conclusion The presented minimal bistable system finally clarifies the often discussed question for the necessary conditions for bistability. The three necessary conditions are: positive feedback, a mechanism to filter out small stimuli and a mechanism to prevent explosions. This is important for modelling bistability with

  17. Generalized bipolariton model. propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons

    International Nuclear Information System (INIS)

    Igor Beloussov


    A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons. (author)


    Directory of Open Access Journals (Sweden)

    V. L. Kozlov


    Full Text Available Construction techniques of precision measuring instruments of optical characteristics on the basis of two-wave lasers with use of basic and nephelometer methods are presented. System stability to changes of hardware constants, influence of an environment, pollution of optics is shown. The system automatically takes into account changes of a controllable line length that expands functionalities of a measuring instrument. 

  19. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Posilović, K. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)


    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  20. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    International Nuclear Information System (INIS)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D.; Posilović, K.; Pohl, J.; Weyers, M.


    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm −2  sr −1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  1. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F


    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  2. Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities. (United States)

    Zhu, X; Cassidy, D T


    A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

  3. Laser isotope purification of lead for use in semiconductor chip interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Scheibner, K.; Haynam, C.; Worden, E.; Esser, B.


    Lead, used throughout the electronics industries, typically contains small amounts of radioactive {sup 210}Pb (a daughter product of the planets ubiquitous {sup 238}U) whose {sup 210}Po daughter emits an {alpha}-particle that is known to cause soft errors in electronic circuits. The {sup 210}Pb is not separable by chemical means. This paper describes the generic Atomic Vapor Laser Isotope Separation (AVLIS) process developed at the Lawrence Livermore National Laboratory (LLNL) over the last 20 years, with particular emphasis on recent efforts to develop the process physics and component technologies required to remove the offending {sup 210}Pb using lasers. We have constructed a developmental facility that includes a process laser development area and a test bed for the vaporizer and ion and product collectors. We will be testing much of the equipment and demonstrating pilot scale AVLIS on a surrogate material later this year. Detection of the very low alpha emission even from commercially available low-alpha lead is challenging. LLNL`s detection capabilities will be described. The goal of the development of lead purification technology is to demonstrate the capability in FY97, and to deploy a production machine capable of up to several MT/y of isotopically purified material, possible beginning in FY98.

  4. Influence of parameters of gas medium on the fluorescence of iodine molecules 129I2, 127I129I and 127I2 excited by semiconductor laser radiation (United States)

    Kireev, S. V.; Shnyrev, S. L.


    Calculated and experimental results of studies of the influence of vapor temperature of iodine molecules (129I2, 127I129I, and 127I2) and pressure of the analyzed medium on the intensity of fluorescence of the molecules excited by semiconductor laser radiation in the red spectrum region are reported. It is demonstrated that depending on the wavelength of laser radiation there exist different ranges of temperatures and pressure values at which the fluorescence intensities of each of the indicated iodine molecules reach their maximum values.

  5. Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Fritz, I.J.; Klem, J.F.; Hafich, M.J. [and others


    This report summarizes research completed under a Laboratory Directed Research and Development program funded for part of FY94, FY95 and FY96. The main goals were (1) to develop novel, compound-semiconductor based optical sources to enable field-based detection of environmentally important chemical species using miniaturized, low-power, rugged, moderate cost spectroscopic equipment, and (2) to demonstrate the utility of near-infrared spectroscopy to quantitatively measure contaminants. Potential applications would include monitoring process and effluent streams for volatile organic compound detection and sensing head-space gasses in storage vessels for waste management. Sensing is based on absorption in the 1.3-1.9 {mu}m band from overtones of the C-H, N-H and O-H stretch resonances. We describe work in developing novel broadband light-emitting diodes emitting over the entire 1.4-1.9 {mu}m wavelength range, first using InGaAs quantum wells, and second using a novel technique for growing digital-alloy materials in the InAlGaAs material system. Next we demonstrate the utility of near-infrared spectroscopy for quantitatively determining contamination of soil by motor oil. Finally we discuss the separability of different classes of organic compounds using near-infrared spectroscopic techniques.

  6. A novel bistable energy harvesting concept

    International Nuclear Information System (INIS)

    Scarselli, G; Nicassio, F; Pinto, F; Ciampa, F; Iervolino, O; Meo, M


    Bistable energy harvesting has become a major field of research due to some unique features for converting mechanical energy into electrical power. When properly loaded, bistable structures snap-through from one stable configuration to another, causing large strains and consequently power generation. Moreover, bistable structures can harvest energy across a broad-frequency bandwidth due to their nonlinear characteristics. Despite the fact that snap-through may be triggered regardless of the form or frequency of exciting vibration, the external force must reach a specific snap-through activation threshold value to trigger the transition from one stable state to another. This aspect is a limiting factor for realistic vibration energy harvesting application with bistable devices. This paper presents a novel power harvesting concept for bistable composites based on a ‘lever effect’ aimed at minimising the activation force to cause the snap through by choosing properly the bistable structures’ constraints. The concept was demonstrated with the help of numerical simulation and experimental testing. The results showed that the actuation force is one order of magnitude smaller (3%–6%) than the activation force of conventionally constrained bistable devices. In addition, it was shown that the output voltage was higher than the conventional configuration, leading to a significant increase in power generation. This novel concept could lead to a new generation of more efficient bistable energy harvesters for realistic vibration environments. (paper)

  7. Photonic microwave carrier recovery using period-one nonlinear dynamics of semiconductor lasers for OFDM-RoF coherent detection. (United States)

    Hung, Yu-Han; Yan, Jhih-Heng; Feng, Kai-Ming; Hwang, Sheng-Kwang


    This study investigates an all-optical scheme based on period-one (P1) nonlinear dynamics of semiconductor lasers, which regenerates the microwave carrier of an orthogonal frequency division multiplexing radio-over-fiber (OFDM-RoF) signal and uses it as a microwave local oscillator for coherent detection. Through the injection locking established between the OFDM-RoF signal and the P1 dynamics, frequency synchronization with highly preserved phase quality is inherently achieved between the recovered microwave carrier and the microwave carrier of the OFDM-RoF signal. A bit-error ratio down to 1.9×10-9 is achieved accordingly using the proposed scheme for coherent detection of a 32-GHz OFDM-RoF signal carrying 4  Gb/s 16-quadrature amplitude modulation data. No electronic microwave generators or electronic phase-locked loops are thus required. The proposed system can be operated up to at least 100 GHz and can be self-adapted to certain changes in the operating microwave frequency.

  8. Short-range remote spectral sensor using mid-infrared semiconductor lasers with orthogonal code-division multiplexing approach (United States)

    Morbi, Zulfikar; Ho, D. B.; Ren, H.-W.; Le, Han Q.; Pei, Shin Shem


    Demonstration of short-range multispectral remote sensing, using 3 to 4-micrometers mid- infrared Sb semiconductor lasers based on code-division multiplexing (CDM) architecture, is described. The system is built on a principle similar to intensity- modulated/direct-detection optical-CDMA for communications, but adapted for sensing with synchronous, orthogonal codes to distinguish different wavelength channels with zero interchannel correlation. The concept is scalable for any number of channels, and experiments with a two-wavelength system are conducted. The CDM-signal processing yielded a white-Gaussian-like system noise that is found to be near the theoretical level limited by the detector fundamental intrinsic noise. With sub-mW transmitter average power, the system was able to detect an open-air acetylene gas leak of 10-2 STP ft3/hr from 10-m away with time-varying, random, noncooperative backscatters. A similar experiment detected and positively distinguished hydrocarbon oil contaminants on water from bio-organic oils and detergents. Projection for more advanced systems suggests a multi-kilometer-range capability for watt-level transmitters, and hundreds of wavelength channels can also be accommodated for active hyperspectral remote sensing application.

  9. Tb/s physical random bit generation with bandwidth-enhanced chaos in three-cascaded semiconductor lasers. (United States)

    Sakuraba, Ryohsuke; Iwakawa, Kento; Kanno, Kazutaka; Uchida, Atsushi


    We experimentally demonstrate fast physical random bit generation from bandwidth-enhanced chaos by using three-cascaded semiconductor lasers. The bandwidth-enhanced chaos is obtained with the standard bandwidth of 35.2 GHz, the effective bandwidth of 26.0 GHz and the flatness of 5.6 dB, whose waveform is used for random bit generation. Two schemes of single-bit and multi-bit extraction methods for random bit generation are carried out to evaluate the entropy rate and the maximum random bit generation rate. For single-bit generation, the generation rate at 20 Gb/s is obtained for physical random bit sequences. For multi-bit generation, the maximum generation rate at 1.2 Tb/s ( = 100 GS/s × 6 bits × 2 data) is equivalently achieved for physical random bit sequences whose randomness is verified by using both NIST Special Publication 800-22 and TestU01.

  10. Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition (United States)

    Wang, Cih-Su; Liau, Chi-Shung; Sun, Tzu-Ming; Chen, Yu-Chia; Lin, Tai-Yuan; Chen, Yang-Fang


    A new approach is proposed to light up band-edge stimulated emission arising from a semiconductor with dipole-forbidden band-gap transition. To illustrate our working principle, here we demonstrate the feasibility on the composite of SnO2 nanowires (NWs) and chicken albumen. SnO2 NWs, which merely emit visible defect emission, are observed to generate a strong ultraviolet fluorescence centered at 387 nm assisted by chicken albumen at room temperature. In addition, a stunning laser action is further discovered in the albumen/SnO2 NWs composite system. The underlying mechanism is interpreted in terms of the fluorescence resonance energy transfer (FRET) from the chicken albumen protein to SnO2 NWs. More importantly, the giant oscillator strength of shallow defect states, which is served orders of magnitude larger than that of the free exciton, plays a decisive role. Our approach therefore shows that bio-materials exhibit a great potential in applications for novel light emitters, which may open up a new avenue for the development of bio-inspired optoelectronic devices. PMID:25758749

  11. International Semiconductor Laser Conference. Held in Boston, Massachusetts on August 29 - September 1, 1988 (United States)


    Meehan, W. Stutius, J.E. Williams, and J.H. Zarrabi , Polaroid Corporation, Cambridge, MA, USA ....... .... 156-157 L:6 3.15 pm High-Power Non-Planar... Zarrabi Microelectronics Laboratory, Polaroid Corporation, Cambridge, MA 02139 High power GaAs/GaAIAs diode lasers are finding an increasing number of...C. p. 184-185 Zarrabi , J. H. p. 156-157 Pooladdej, J. p. 48-49 Stephens, R. R. p. 28-29 Vahala, K. J. p. 186-187 Zehr, S. W p. 48-49 Portnoy, E. L.p

  12. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    Czech Academy of Sciences Publication Activity Database

    Levy, Yoann; Derrien, Thibault; Bulgakova, Nadezhda M.; Gurevich, E.L.; Mocek, Tomáš


    Roč. 374, Jun (2016), s. 157-164 ISSN 0169-4332 R&D Projects: GA MŠk ED2.1.00/01.0027 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : LIPSS * modulated temperature relaxation * two-temperature model * nano-melting Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.387, year: 2016

  13. Semiconductor detectors for observation of multi-MeV protons and ions produced by lasers

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Klir, D.; De Marco, Massimo; Cikhardt, J.; Velyhan, Andriy; Řezáč, Karel; Pfeifer, Miroslav; Krouský, Eduard; Ryć, L.; Dostál, Jan; Kaufman, Jan; Ullschmied, Jiří; Limpouch, J.


    Roč. 3, č. 1 (2016), 9-11 ISSN 2336-2626 R&D Projects: GA ČR GA16-07036S; GA MŠk EF15_008/0000162; GA MŠk(CZ) LD14089 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-accelerated ions * ion collectors * SiC detectors * similarity relations * electromagnetic pulse Subject RIV: BL - Plasma and Gas Discharge Physics

  14. Controlling steady-state and dynamical properties of atomic optical bistability

    CERN Document Server

    Joshi, Amitabh


    This book provides a comprehensive introduction to the theoretical and experimental studies of atomic optical bistability and multistability, and their dynamical properties in systems with two- and three-level inhomogeneously-broadened atoms inside an optical cavity. By making use of the modified linear absorption and dispersion, as well as the greatly enhanced nonlinearity in the three-level electromagnetically induced transparency system, the optical bistablity and efficient all-optical switching can be achieved at relatively low laser powers, which can be well controlled and manipulated. Un

  15. Diversity and functional properties of bistable pigments. (United States)

    Tsukamoto, Hisao; Terakita, Akihisa


    Rhodopsin and related opsin-based pigments, which are photosensitive membrane proteins, have been extensively studied using a wide variety of techniques, with rhodopsin being the most understood G protein-coupled receptor (GPCR). Animals use various opsin-based pigments for vision and a wide variety of non-visual functions. Many functionally varied pigments are roughly divided into two kinds, based on their photoreaction: bistable and monostable pigments. Bistable pigments are thermally stable before and after photo-activation, but monostable pigments are stable only before activation. Here, we review the diversity of bistable pigments and their molecular characteristics. We also discuss the mechanisms underlying different molecular characteristics of bistable and monostable pigments. In addition, the potential of bistable pigments as a GPCR model is proposed.

  16. High-resolution bistable nematic liquid crystal device realized on orientational surface patterns

    International Nuclear Information System (INIS)

    Kim, Jong-Hyun; Yoneya, Makoto; Yokoyama, Hiroshi


    The four-fold symmetry of a checkerboard-like surface alignment consisted of square domains arrived at the macroscopic orientational bistability of nematic liquid crystals. Switching between the two orientations took place with an appropriate electric field. Here the threshold field of bistable switching decreased as temperature increased, and the light could heat only the selected region in the cell including a light-absorbing medium. Irradiating the laser concurrently with an electric field, we addressed a selected region in the alignment pattern without the disturbance of neighboring regions. Extending this process, we realized an extremely fine bistable device of nematic liquid crystal with a pixel size down to about 2 μm

  17. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography. (United States)

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul


    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  18. 640-Gbit/s fast physical random number generation using a broadband chaotic semiconductor laser (United States)

    Zhang, Limeng; Pan, Biwei; Chen, Guangcan; Guo, Lu; Lu, Dan; Zhao, Lingjuan; Wang, Wei


    An ultra-fast physical random number generator is demonstrated utilizing a photonic integrated device based broadband chaotic source with a simple post data processing method. The compact chaotic source is implemented by using a monolithic integrated dual-mode amplified feedback laser (AFL) with self-injection, where a robust chaotic signal with RF frequency coverage of above 50 GHz and flatness of ±3.6 dB is generated. By using 4-least significant bits (LSBs) retaining from the 8-bit digitization of the chaotic waveform, random sequences with a bit-rate up to 640 Gbit/s (160 GS/s × 4 bits) are realized. The generated random bits have passed each of the fifteen NIST statistics tests (NIST SP800-22), indicating its randomness for practical applications.

  19. Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Christoph Doering


    Full Text Available Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.

  20. Phase dependence of optical bistability and multistability in a four-level quantum system near a plasmonic nanostructure

    International Nuclear Information System (INIS)

    Asadpour, Seyyed Hossein; Rahimpour Soleimani, H.


    The optical bistability and multistability properties of a four-level quantum system near a plasmonic nanostructure embedded in a unidirectional ring cavity are studied theoretically. Two orthogonal circularly polarized laser fields with the same frequency, different phases and electric fields amplitude are interacted by four-level quantum system. It is found that in the presence of the plasmonic nanostructure, the bistable behaviors related to one of the laser fields propagating through the unidirectional ring cavity can be modified by relative phase and amplitude control of another laser fields. Our obtained results show that the optical bistability can be converted into the optical multistability by varying the value of distance between the quantum system and the surface of the plasmonic nanostructure. Moreover, it is shown that under specific condition related to the distance, the lasing without population inversion can be obtained

  1. Phase dependence of optical bistability and multistability in a four-level quantum system near a plasmonic nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Asadpour, Seyyed Hossein; Rahimpour Soleimani, H., E-mail: [Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, Rasht (Iran, Islamic Republic of)


    The optical bistability and multistability properties of a four-level quantum system near a plasmonic nanostructure embedded in a unidirectional ring cavity are studied theoretically. Two orthogonal circularly polarized laser fields with the same frequency, different phases and electric fields amplitude are interacted by four-level quantum system. It is found that in the presence of the plasmonic nanostructure, the bistable behaviors related to one of the laser fields propagating through the unidirectional ring cavity can be modified by relative phase and amplitude control of another laser fields. Our obtained results show that the optical bistability can be converted into the optical multistability by varying the value of distance between the quantum system and the surface of the plasmonic nanostructure. Moreover, it is shown that under specific condition related to the distance, the lasing without population inversion can be obtained.

  2. A broadband electromagnetic energy harvester with a coupled bistable structure


    Zhu, Dibin; Beeby, Steve


    This paper investigates a broadband electromagnetic energy harvester with a coupled bistable structure. Both analytical model and experimental results showed that the coupled bistable structure requires lower excitation force to trigger bistable operation than conventional bistable structures. A compact electromagnetic vibration energy harvester with a coupled bistable structure was implemented and tested. It was excited under white noise vibrations. Experimental results showed that the coupl...

  3. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum. (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud


    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  4. Ultra-short pulse generation in a linear femtosecond fiber laser using a Faraday rotator mirror and semiconductor saturable absorber mirror (United States)

    Hekmat, M. J.; Gholami, A.; Omoomi, M.; Abdollahi, M.; Bagheri, A.; Normohammadi, H.; Kanani, M.; Ebrahimi, A.


    An innovative method for obtaining ultra-short and perfectly stable femtosecond pulses in a linear erbium-doped fiber laser is proposed. A commercial semiconductor saturable absorber mirror and a standard Faraday rotator are used in both sides of the linear fiber optic laser configuration to shorten the pulse duration and suppress undesirable effects on the polarization state. The laser operation is investigated theoretically using a physical model and it is verified using experimental results. The main idea of this research is to apply a Faraday rotator mirror for pulse shortening purposes. For this reason, two types of Er-doped fiber optics with different group velocity dispersion parameters are used to achieve the optimum net group velocity dispersion in the cavity. Output results demonstrate good consistency between theory and experimental results. The output power of the linear oscillator is approximately 45 mW with 135 fs pulses at the 23.5 MHz repetition rate without any pulse compression.

  5. Photobiostimulation effects on germination and early growth of wheat seeds (Triticum aestivum L) produced by a semiconductor laser with λ=980nm

    International Nuclear Information System (INIS)

    Michtchenko, A.; Hernandez, M.


    The effect of the exposure of wheat (Triticum aestivum L) seeds to a IR laser radiation with λ=980nm produced by a semiconductor laser on germination and early growth had been studied under laboratory conditions. Seeds were irradiated to one of two laser intensities 15 mWcm - ''2 or 30 mWcm -2 for different periods of time 30, 60 or 120 s. Seeds exposed to a light intensity of 15mWcm -2 and an exposition time of 30 s. showed an increase on the percentage of seeds germinated normally while the percentage of seeds germinated abnormally decreased. At the same time there is a stimulation effect on the growth of the stem and on the growth of the root of 10% on wheat seedlings over control seedlings. Significant differences (ρ < 0.001) were observed between the control and the above treatment. (Author)

  6. Optical bistability and multistability driven by external magnetic field in a dielectric slab doped with nanodiamond nitrogen vacancy centres (United States)

    Nasehi, R.; Norouzi, F.


    The theoretical investigation of controlling the optical bistability (OB) and optical multistability (OM) in a dielectric medium doped with nanodiamond nitrogen vacancy centres under optical excitation are reported. The shape of the OB curve from dielectric slab can be tuned by changing the external magnetic field and polarization of the control beam. The effect of the intensity of the control laser field and the frequency detuning of probe laser field on the OB and OM behaviour are also discussed in this paper. The results obtained can be used for realizing an all-optical bistable switching or development of nanoelectronic devices.

  7. Transcriptional delay stabilizes bistable gene networks. (United States)

    Gupta, Chinmaya; López, José Manuel; Ott, William; Josić, Krešimir; Bennett, Matthew R


    Transcriptional delay can significantly impact the dynamics of gene networks. Here we examine how such delay affects bistable systems. We investigate several stochastic models of bistable gene networks and find that increasing delay dramatically increases the mean residence times near stable states. To explain this, we introduce a non-Markovian, analytically tractable reduced model. The model shows that stabilization is the consequence of an increased number of failed transitions between stable states. Each of the bistable systems that we simulate behaves in this manner.

  8. Record Pulsed Power Demonstration of a 2 micron GaSb-Based Optically Pumped Semiconductor Laser Grown Lattice-Mismatched on an AlAs/GaAs Bragg Mirror and Substrate (Postprint) (United States)


    when pumped with a pulsed 1064 nm neodymium doped yttrium aluminum garnet laser. 15. SUBJECT TERMS lasers, semiconductor 16. SECURITY...pulsed 1064 nm neodymium doped yttrium aluminum garnet laser. © 2009 American Institute of Physics. DOI: 10.1063/1.3212891 Optically pumped...AlGaAs/GaAs DBR and GaAs substrate but to grow an antimonide RPG stack con- sisting of InGaSb quantum wells embedded in AlGaSb bar- riers on the latter

  9. Space charge effects and electronic bistability

    International Nuclear Information System (INIS)

    Ruffini, A.; Strumia, F.; Tommasi, O.


    The excitation of metastable states in an atomic beam apparatus by means of electron collision is a widespread technique. The authors have observed a large bistable behaviour in apparatus designed to provide an intense and collimated beam of metastable helium by excitation with orthogonally impinging electrons. This bistable behaviour largely affects the efficiency of the apparatus and is therefore worth of being carefully investigated. The apparatus has an electrode configuration equivalent to that of a tetrode valve with large intergrid distances. The bistability consists in a hysteresis cycle in the curve of the anode current vs. grid voltage. Experimental measurements, supported by a simple theoretical model and by numerical simulation, stress out the crucial role played by space charge effects for the onset of bistability. A comparison with previous observations of this phenomenon is given. Spontaneous current oscillations with various shapes have been recorded in one of the two curves of the hysteresis cycle

  10. Bistable fluidic valve is electrically switched (United States)

    Fiet, O.; Salvinski, R. J.


    Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.

  11. GABA shapes the dynamics of bistable perception. (United States)

    van Loon, Anouk M; Knapen, Tomas; Scholte, H Steven; St John-Saaltink, Elexa; Donner, Tobias H; Lamme, Victor A F


    Sometimes, perception fluctuates spontaneously between two distinct interpretations of a constant sensory input. These bistable perceptual phenomena provide a unique window into the neural mechanisms that create the contents of conscious perception. Models of bistable perception posit that mutual inhibition between stimulus-selective neural populations in visual cortex plays a key role in these spontaneous perceptual fluctuations. However, a direct link between neural inhibition and bistable perception has not yet been established experimentally. Here, we link perceptual dynamics in three distinct bistable visual illusions (binocular rivalry, motion-induced blindness, and structure from motion) to measurements of gamma-aminobutyric acid (GABA) concentrations in human visual cortex (as measured with magnetic resonance spectroscopy) and to pharmacological stimulation of the GABAA receptor by means of lorazepam. As predicted by a model of neural interactions underlying bistability, both higher GABA concentrations in visual cortex and lorazepam administration induced slower perceptual dynamics, as reflected in a reduced number of perceptual switches and a lengthening of percept durations. Thus, we show that GABA, the main inhibitory neurotransmitter, shapes the dynamics of bistable perception. These results pave the way for future studies into the competitive neural interactions across the visual cortical hierarchy that elicit conscious perception. Copyright © 2013 Elsevier Ltd. All rights reserved.

  12. Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications; Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstaerkungsmedien fuer Laseranwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Bueckers, Christina


    A microscopic many-particle theory is applied to model a wide range of semiconductor laser gain materials. The fundamental understanding of the gain medium and the underlying carrier interaction processes allow for the quantitative prediction of the optoelectronic properties governing the laser performance. Detailed theory-experiment-comparisons are shown for a variety of structures demonstrating the application capabilities of the theoretical approach. The microscopically calculated material properties, in particular absorption, optical gain, luminescence and the intrinsic carrier losses due to radiative and Auger-recombination, constitute the critical input to analyse and design laser structures. On this basis, important system features such as laser wavelength or threshold behaviour become predictable. However, the theory is also used in a diagnostic fashion, e.g. to extract otherwise poorly known structural parameter. Thus, novel concepts for the optimisation of laser designs may be developed with regard to the requirements of specific applications. Moreover, the approach allows for the systematic exploration and assessment of completely novel material systems and their application potential. (orig.)

  13. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.


    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  14. Coupled chaotic attractors and driving-induced bistability: A brief ...

    Indian Academy of Sciences (India)


    breaking interactions in a drive–response system with the driving-induced bistability. The basins of attraction on the initial conditions plane are observed for the driving-induced bistability. The basins are dependent on the interaction ...

  15. Slow Light Semiconductor Laser (United States)


    published in non-peer-reviewed journals (N/A for none) (c) Presentations 02/02/2015 Received Paper 7.00 C. T. Santis, S. T. Steger , Y. Vilenchik, A. Vasilyev...Christos Santis, Scott Steger , Naresh Satyan, Amnon Yariv. Theory and observation on non-linear effects limiting thecoherence properties of high-Q hybrid...PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: Discipline Liu, Hsi-Chun 0.26 Steger , Scott 0.16 Vasilyev, Arseny 0.03 0.45 3 PERCENT_SUPPORTEDNAME FTE

  16. Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns, Phase I (United States)

    National Aeronautics and Space Administration — While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources...

  17. Optical bi-stable shutter development/improvement (United States)

    Lizon, J. L.; Haddad, N.; Castillo, R.


    Two of the VLT instruments (Giraffe and VIMOS) are using the large magnetic E/150 from Prontor (with an aperture diameter of 150 mm). As we were facing an unacceptable number of failures with this component some improvement plan was discussed already in 2004. The final decision for starting this program was conditioned by the decision from the constructor to stop the production. The opportunity was taken to improve the design building a fully bi-stable mechanism in order to reduce the thermal dissipation. The project was developed in collaboration between the two main ESO sites doing the best use of the manpower and of the technical capability available at the two centers. The project took advantage of the laser Mask Manufacturing Unit and the invar sheets used to prepare the VIMOS MOS mask to fabricate the shutter petals. Our paper describes the development including the intensive and long optimization period. To conclude this optimization we proceed with a long life test on two units. These units have demonstrate a very high level of reliability (up to 100 000 cycles without failure which can be estimated to an equivalent 6 years of operation of the instrument) A new bi-stable shutter driver and controller have also been developed. Some of the highlights of this unit are the fully configurable coil driving parameters, usage of braking strategy to dump mechanical vibration and reduce mechanical wearing, configurable usage of OPEN and CLOSE sensors, non volatile storage of parameters, user friendly front panel interface.

  18. Bistable soliton states and switching in doubly inhomogeneously ...

    Indian Academy of Sciences (India)

    there has been a considerable interest in bistable solitons in glass fibers (with non-Kerr properties), in connection with optical bistability and other possible applications leading to switching and logic-gate devices. In literature one distinguishes between two kinds of bistable solitons: one for which the nonlinear propagation ...

  19. Bistable dynamics of an insect–pathogen model

    Indian Academy of Sciences (India)

    Here, we were able to construct an insect–pathogen model which has bistable dynamics. This simple model may be helpful to identify the universal mechanisms which lead to bistability in a biological system. The control of bistable system is very difficult because the dynamics has sensitivity to initial conditions. Therefore, to ...

  20. Origin of bistability in the lac Operon. (United States)

    Santillán, M; Mackey, M C; Zeron, E S


    Multistability is an emergent dynamic property that has been invoked to explain multiple coexisting biological states. In this work, we investigate the origin of bistability in the lac operon. To do this, we develop a mathematical model for the regulatory pathway in this system and compare the model predictions with other experimental results in which a nonmetabolizable inducer was employed. We investigate the effect of lactose metabolism using this model, and show that it greatly modifies the bistable region in the external lactose (Le) versus external glucose (Ge) parameter space. The model also predicts that lactose metabolism can cause bistability to disappear for very low Ge. We have also carried out stochastic numerical simulations of the model for several values of Ge and Le. Our results indicate that bistability can help guarantee that Escherichia coli consumes glucose and lactose in the most efficient possible way. Namely, the lac operon is induced only when there is almost no glucose in the growing medium, but if Le is high, the operon induction level increases abruptly when the levels of glucose in the environment decrease to very low values. We demonstrate that this behavior could not be obtained without bistability if the stability of the induced and uninduced states is to be preserved. Finally, we point out that the present methods and results may be useful to study the emergence of multistability in biological systems other than the lac operon.

  1. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.


    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  2. Perceptual incongruence influences bistability and cortical activation.

    Directory of Open Access Journals (Sweden)

    Gijs Joost Brouwer

    Full Text Available We employed a parametric psychophysical design in combination with functional imaging to examine the influence of metric changes in perceptual incongruence on perceptual alternation rates and cortical responses. Subjects viewed a bistable stimulus defined by incongruent depth cues; bistability resulted from incongruence between binocular disparity and monocular perspective cues that specify different slants (slant rivalry. Psychophysical results revealed that perceptual alternation rates were positively correlated with the degree of perceived incongruence. Functional imaging revealed systematic increases in activity that paralleled the psychophysical results within anterior intraparietal sulcus, prior to the onset of perceptual alternations. We suggest that this cortical activity predicts the frequency of subsequent alternations, implying a putative causal role for these areas in initiating bistable perception. In contrast, areas implicated in form and depth processing (LOC and V3A were sensitive to the degree of slant, but failed to show increases in activity when these cues were in conflict.

  3. Bistable firing properties of soleus motor units in unrestrained rats

    DEFF Research Database (Denmark)

    EKEN, T.; KIEHN, O.


    of the motoneuron pool by stimulation of la afferents, or inhibition by stimulation of skin afferents. The shifts were not related to gross limb movements. This phenomenon is referred to as a bistable firing pattern. Bistable firing also occurred spontaneously during quiet standing. Typically the firing frequency...... was unchanged or only phasically influenced. These results demonstrate for the first time a bistable firing pattern during postural activity in the intact animal. The firing pattern closely resembles the bistable behaviour described in spinal motoneurons in reduced preparations, where it is due to the presence...... of a plateau potential. This suggests that the bistable firing is unexplained by plateau potentials also in the intact animal....

  4. Balancing bistable perception during self-motion. (United States)

    van Elk, Michiel; Blanke, Olaf


    In two experiments we investigated whether bistable visual perception is influenced by passive own body displacements due to vestibular stimulation. For this we passively rotated our participants around the vertical (yaw) axis while observing different rotating bistable stimuli (bodily or non-bodily) with different ambiguous motion directions. Based on previous work on multimodal effects on bistable perception, we hypothesized that vestibular stimulation should alter bistable perception and that the effects should differ for bodily versus non-bodily stimuli. In the first experiment, it was found that the rotation bias (i.e., the difference between the percentage of time that a CW or CCW rotation was perceived) was selectively modulated by vestibular stimulation: the perceived duration of the bodily stimuli was longer for the rotation direction congruent with the subject's own body rotation, whereas the opposite was true for the non-bodily stimulus (Necker cube). The results found in the second experiment extend the findings from the first experiment and show that these vestibular effects on bistable perception only occur when the axis of rotation of the bodily stimulus matches the axis of passive own body rotation. These findings indicate that the effect of vestibular stimulation on the rotation bias depends on the stimulus that is presented and the rotation axis of the stimulus. Although most studies on vestibular processing have traditionally focused on multisensory signal integration for posture, balance, and heading direction, the present data show that vestibular self-motion influences the perception of bistable bodily stimuli revealing the importance of vestibular mechanisms for visual consciousness.

  5. Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR (United States)

    Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud


    Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (state of the art commercial technologies thanks to a combination of power-coherence-wavelength tunability performances and integration.

  6. Bistable Microvalve For Use With Microcatheter System (United States)

    Seward, Kirk Patrick


    A bistable microvalve of shape memory material is operatively connected to a microcatheter. The bistable microvalve includes a tip that can be closed off until it is in the desired position. Once it is in position it can be opened and closed. The system uses heat and pressure to open and close the microvalve. The shape memory material will change stiffness and shape when heated above a transition temperature. The shape memory material is adapted to move from a first shape to a second shape, either open or closed, where it can perform a desired function.

  7. Unidirectional Transition Waves in Bistable Lattices. (United States)

    Nadkarni, Neel; Arrieta, Andres F; Chong, Christopher; Kochmann, Dennis M; Daraio, Chiara


    We present a model system for strongly nonlinear transition waves generated in a periodic lattice of bistable members connected by magnetic links. The asymmetry of the on-site energy wells created by the bistable members produces a mechanical diode that supports only unidirectional transition wave propagation with constant wave velocity. We theoretically justify the cause of the unidirectionality of the transition wave and confirm these predictions by experiments and simulations. We further identify how the wave velocity and profile are uniquely linked to the double-well energy landscape, which serves as a blueprint for transition wave control.

  8. Bistable Topological Insulator with Exciton-Polaritons (United States)

    Kartashov, Yaroslav V.; Skryabin, Dmitry V.


    The functionality of many nonlinear and quantum optical devices relies on the effect of optical bistability. Using microcavity exciton-polaritons in a honeycomb arrangement of microcavity pillars, we report the resonance response and bistability of topological edge states. A balance between the pump, loss, and nonlinearity ensures a broad range of dynamical stability and controls the distribution of power between counterpropagating states on the opposite edges of the honeycomb lattice stripe. Tuning energy and polarization of the pump photons, while keeping their momentum constant, we demonstrate control of the propagation direction of the dominant edge state. Our results facilitate the development of practical applications of topological photonics.

  9. Controllable optical bistability and multistability in a graphene monolayer system

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Duo, E-mail: [School of Electrical and Electronic Engineering, Wuhan Polytechnic University, Wuhan 430023 (China); Sun, Zhaoyu [School of Electrical and Electronic Engineering, Wuhan Polytechnic University, Wuhan 430023 (China); Ding, Chunling [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Yu, Rong [School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan Institute of Technology, Wuhan 430073 (China); Yang, Xiaoxue [Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)


    We theoretically investigate the behavior of optical bistability (OB) and optical multistability (OM) in a graphene monolayer system driven by an elliptically polarized control field and a right-hand circularly polarized probe field. Our numerical results show that it is easy to realize the transition from OB to OM or vice versa by adjusting the frequency detunings of the probe field and the control field, as well as the polarization-dependent phase difference between the two components of the control laser field. The influences of the intensity of the control field and the cooperation parameter on the OB behavior are also discussed in detail. These results may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.

  10. Neuromechanistic Model of Auditory Bistability.

    Directory of Open Access Journals (Sweden)

    James Rankin


    Full Text Available Sequences of higher frequency A and lower frequency B tones repeating in an ABA- triplet pattern are widely used to study auditory streaming. One may experience either an integrated percept, a single ABA-ABA- stream, or a segregated percept, separate but simultaneous streams A-A-A-A- and -B---B--. During minutes-long presentations, subjects may report irregular alternations between these interpretations. We combine neuromechanistic modeling and psychoacoustic experiments to study these persistent alternations and to characterize the effects of manipulating stimulus parameters. Unlike many phenomenological models with abstract, percept-specific competition and fixed inputs, our network model comprises neuronal units with sensory feature dependent inputs that mimic the pulsatile-like A1 responses to tones in the ABA- triplets. It embodies a neuronal computation for percept competition thought to occur beyond primary auditory cortex (A1. Mutual inhibition, adaptation and noise are implemented. We include slow NDMA recurrent excitation for local temporal memory that enables linkage across sound gaps from one triplet to the next. Percepts in our model are identified in the firing patterns of the neuronal units. We predict with the model that manipulations of the frequency difference between tones A and B should affect the dominance durations of the stronger percept, the one dominant a larger fraction of time, more than those of the weaker percept-a property that has been previously established and generalized across several visual bistable paradigms. We confirm the qualitative prediction with our psychoacoustic experiments and use the behavioral data to further constrain and improve the model, achieving quantitative agreement between experimental and modeling results. Our work and model provide a platform that can be extended to consider other stimulus conditions, including the effects of context and volition.

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S


    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  12. Semiconductor physics

    CERN Document Server

    Böer, Karl W


    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  13. A CW Gunn diode bistable switching element. (United States)

    Hurtado, M.; Rosenbaum, F. J.


    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  14. Metastable and bistable defects in silicon

    International Nuclear Information System (INIS)

    Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V


    Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

  15. Organic bistable light-emitting devices (United States)

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang


    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  16. Dimensionality reduction of bistable biological systems. (United States)

    Zakharova, A; Nikoloski, Z; Koseska, A


    Time hierarchies, arising as a result of interactions between system's components, represent a ubiquitous property of dynamical biological systems. In addition, biological systems have been attributed switch-like properties modulating the response to various stimuli across different organisms and environmental conditions. Therefore, establishing the interplay between these features of system dynamics renders itself a challenging question of practical interest in biology. Existing methods are suitable for systems with one stable steady state employed as a well-defined reference. In such systems, the characterization of the time hierarchies has already been used for determining the components that contribute to the dynamics of biological systems. However, the application of these methods to bistable nonlinear systems is impeded due to their inherent dependence on the reference state, which in this case is no longer unique. Here, we extend the applicability of the reference-state analysis by proposing, analyzing, and applying a novel method, which allows investigation of the time hierarchies in systems exhibiting bistability. The proposed method is in turn used in identifying the components, other than reactions, which determine the systemic dynamical properties. We demonstrate that in biological systems of varying levels of complexity and spanning different biological levels, the method can be effectively employed for model simplification while ensuring preservation of qualitative dynamical properties (i.e., bistability). Finally, by establishing a connection between techniques from nonlinear dynamics and multivariate statistics, the proposed approach provides the basis for extending reference-based analysis to bistable systems.

  17. Review of inductively coupled plasmas: Nano-applications and bistable hysteresis physics (United States)

    Lee, Hyo-Chang


    Many different gas discharges and plasmas exhibit bistable states under a given set of conditions, and the history-dependent hysteresis that is manifested by intensive quantities of the system upon variation of an external parameter has been observed in inductively coupled plasmas (ICPs). When the external parameters (such as discharge powers) increase, the plasma density increases suddenly from a low- to high-density mode, whereas decreasing the power maintains the plasma in a relatively high-density mode, resulting in significant hysteresis. To date, a comprehensive description of plasma hysteresis and a physical understanding of the main mechanism underlying their bistability remain elusive, despite many experimental observations of plasma bistability conducted under radio-frequency ICP excitation. This fundamental understanding of mode transitions and hysteresis is essential and highly important in various applied fields owing to the widespread use of ICPs, such as semiconductor/display/solar-cell processing (etching, deposition, and ashing), wireless light lamp, nanostructure fabrication, nuclear-fusion operation, spacecraft propulsion, gas reformation, and the removal of hazardous gases and materials. If, in such applications, plasma undergoes a mode transition and hysteresis occurs in response to external perturbations, the process result will be strongly affected. Due to these reasons, this paper comprehensively reviews both the current knowledge in the context of the various applied fields and the global understanding of the bistability and hysteresis physics in the ICPs. At first, the basic understanding of the ICP is given. After that, applications of ICPs to various applied fields of nano/environmental/energy-science are introduced. Finally, the mode transition and hysteresis in ICPs are studied in detail. This study will show the fundamental understanding of hysteresis physics in plasmas and give open possibilities for applications to various applied

  18. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project (United States)

    National Aeronautics and Space Administration — Many space applications rely on the utilization of Light Detection and Raging (LIDAR) techniques. A key component of any LIDAR system is the laser source. Single...

  19. All-optical 2-bit header recognition and packet switching using polarization bistable VCSELs. (United States)

    Hayashi, Daisuke; Nakao, Kazuya; Katayama, Takeo; Kawaguchi, Hitoshi


    We propose and evaluate an all-optical 2-bit header recognition and packet switching method using two 1.55-µm polarization bistable vertical-cavity surface-emitting lasers (VCSELs) and three optical switches. Polarization bistable VCSELs acted as flip-flop devices by using AND-gate operations of the header and set pulses, together with the reset pulses. Optical packets including 40-Gb/s non-return-to-zero pseudo-random bit-sequence payloads were successfully sent to one of four ports according to the state of two bits in the headers with a 4-bit 500-Mb/s return-to-zero format. The input pulse powers were 17.2 to 31.8 dB lower than the VCSEL output power. We also examined an extension of this method to multi-bit header recognition and packet switching.

  20. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B


    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  1. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    Directory of Open Access Journals (Sweden)

    Shougui Ning


    Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  2. Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W (United States)

    König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.


    Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

  3. Bistable scattering in graphene-coated dielectric nanowires. (United States)

    Li, Rujiang; Wang, Huaping; Zheng, Bin; Dehdashti, Shahram; Li, Erping; Chen, Hongsheng


    In nonlinear plasmonics, the switching threshold of optical bistability is limited by the weak nonlinear responses from the conventional Kerr dielectric media. Considering the giant nonlinear susceptibility of graphene, here we develop a nonlinear scattering model under the mean field approximation and study the bistable scattering in graphene-coated dielectric nanowires based on the semi-analytical solutions. We find that the switching intensities of bistable scattering can be smaller than 1 MW cm -2 at the working frequency. To further decrease the switching intensities, we show that the most important factor that restricts the bistable scattering is the relaxation time of graphene. Our work not only reveals some general characteristics of graphene-based bistable scattering, but also provides a guidance to further applications of optical bistability in the high speed all-optical signal processing.

  4. Bistable perception modeled as competing stochastic integrations at two levels. (United States)

    Gigante, Guido; Mattia, Maurizio; Braun, Jochen; Del Giudice, Paolo


    We propose a novel explanation for bistable perception, namely, the collective dynamics of multiple neural populations that are individually meta-stable. Distributed representations of sensory input and of perceptual state build gradually through noise-driven transitions in these populations, until the competition between alternative representations is resolved by a threshold mechanism. The perpetual repetition of this collective race to threshold renders perception bistable. This collective dynamics - which is largely uncoupled from the time-scales that govern individual populations or neurons - explains many hitherto puzzling observations about bistable perception: the wide range of mean alternation rates exhibited by bistable phenomena, the consistent variability of successive dominance periods, and the stabilizing effect of past perceptual states. It also predicts a number of previously unsuspected relationships between observable quantities characterizing bistable perception. We conclude that bistable perception reflects the collective nature of neural decision making rather than properties of individual populations or neurons.

  5. Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905 nm) asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S O; Podoskin, A A; Pikhtin, N A; Tarasov, I S


    Experimental static and dynamic electro-optical characteristics of 905 nm high power mesa-stripe semiconductor laser diodes based on an AlGaAs/GaAs asymmetric heterostructure operating under Fabry–Perot cavity mode quenching have been investigated. We have shown that Fabry–Perot cavity mode reversible turn-off is due to the fulfillment of a high-Q closed mode threshold condition. The mode is propagating along both gain and passive areas of the laser diode and characterized by nearly zero output optical losses. We have demonstrated that fundamental reasons of closed mode threshold condition fulfillment are (i) gain spectra shift in the long wavelength region due to band gap shrinkage and thermal heating effects and (ii) the band gap absorption decrease in the passive area. It has been shown that the process of closed mode turn-on consists of two stages. In the first stage, Fabry–Perot cavity modes and closed modes are lasing simultaneously under high residual band gap absorption in the passive area. In the second stage, closed mode optical losses become lower than Fabry–Perot cavity mode optical losses due to a positive feedback between the residual absorption and closed mode photon stimulated generation rate. This results in an accumulation of photogenerated carriers in the quantum well active region of the laser diode passive area. As a result, the threshold concentration in the gain area decreases providing lasing emission switching from the Fabry–Perot cavity mode to the closed mode. (paper)

  6. Optical bistability and multistability in polaritonic materials doped with nanoparticles

    International Nuclear Information System (INIS)

    Wang, Zhiping; Yu, Benli


    We investigate the optical bistability and multistability in polaritonic materials doped with nanoparticles inside an optical ring cavity. It is found that the optical bistability and multistability can be easily controlled by adjusting the corresponding parameters of the system properly. The effect of the dipole–dipole interaction has also been included in the formulation, which leads to interesting phenomena. Our scheme opens up the possibility of controling the optical bistability and multistability in polaritonic materials doped with nanoparticles. (letter)

  7. Frequency selective bistable switching in metamaterial based photonic bandgap medium (United States)

    Jose, Jolly


    We present frequency selective bistable response at the defect mode of the zero-nbar bandgap of a photonic bandgap (PBG) material made of negative and positive index media. The nonlinear (Kerr) layer acts as the defect layer in the periodic PBG material. Incorporating metamaterial based electromagnetically induced transparency (EIT) like resonance in the positive layer leads to unprecedented line narrowing of the defect mode which in turn facilitates narrow frequency selective bistable operation, wherein all the bistable characteristics can be effectively engineered. Thresholding the output intensity selects the narrow band of frequencies that exhibit bistability.

  8. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.


    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  9. Lasing from YAG:Nd(3+) and KGdW:Nd(3+) crystals under pumping from semiconductor lasers (United States)

    Davydov, S. V.; Kulak, I. I.; Mit'kovets, A. I.; Stavrov, A. A.; Shkadarevich, A. P.


    The lasing thresholds for YAG:Nd(3+) and KGdW:Nd(3+) under pumping at a wavelength of 586 nm were approximately 2 and 1 mJ, respectively. The efficiency of pump light conversion into KGdW:Nd(3+) laser radiation was 0.27 percent.

  10. Durable bistable auxetics made of rigid solids (United States)

    Shang, Xiao; Liu, Lu; Rafsanjani, Ahmad; Pasini, Damiano


    Bistable Auxetic Metamaterials (BAMs) are a class of monolithic perforated periodic structures with negative Poisson's ratio. Under tension, a BAM can expand and reach a second state of equilibrium through a globally large shape transformation that is ensured by the flexibility of its elastomeric base material. However, if made from a rigid polymer, or metal, BAM ceases to function due to the inevitable rupture of its ligaments. The goal of this work is to extend the unique functionality of the original kirigami architecture of BAM to a rigid solid base material. We use experiments and numerical simulations to assess performance, bistability and durability of rigid BAMs at 10,000 cycles. Geometric maps are presented to elucidate the role of the main descriptors of BAM architecture. The proposed design enables the realization of BAM from a large palette of materials, including elastic-perfectly plastic materials and potentially brittle materials.

  11. Two Bistable Switches Govern M Phase Entry. (United States)

    Mochida, Satoru; Rata, Scott; Hino, Hirotsugu; Nagai, Takeharu; Novák, Béla


    The abrupt and irreversible transition from interphase to M phase is essential to separate DNA replication from chromosome segregation. This transition requires the switch-like phosphorylation of hundreds of proteins by the cyclin-dependent kinase 1 (Cdk1):cyclin B (CycB) complex. Previous studies have ascribed these switch-like phosphorylations to the auto-activation of Cdk1:CycB through the removal of inhibitory phosphorylations on Cdk1-Tyr15 [1, 2]. The positive feedback in Cdk1 activation creates a bistable switch that makes mitotic commitment irreversible [2-4]. Here, we surprisingly find that Cdk1 auto-activation is dispensable for irreversible, switch-like mitotic entry due to a second mechanism, whereby Cdk1:CycB inhibits its counteracting phosphatase (PP2A:B55). We show that the PP2A:B55-inhibiting Greatwall (Gwl)-endosulfine (ENSA) pathway is both necessary and sufficient for switch-like phosphorylations of mitotic substrates. Using purified components of the Gwl-ENSA pathway in a reconstituted system, we found a sharp Cdk1 threshold for phosphorylation of a luminescent mitotic substrate. The Cdk1 threshold to induce mitotic phosphorylation is distinctly higher than the Cdk1 threshold required to maintain these phosphorylations-evidence for bistability. A combination of mathematical modeling and biochemical reconstitution show that the bistable behavior of the Gwl-ENSA pathway emerges from its mutual antagonism with PP2A:B55. Our results demonstrate that two interlinked bistable mechanisms provide a robust solution for irreversible and switch-like mitotic entry. Copyright © 2016 Elsevier Ltd. All rights reserved.

  12. Bistable (latching) solenoid actuated propellant isolation valve (United States)

    Wichmann, H.; Deboi, H. H.


    The design, fabrication, assembly and test of a development configuration bistable (latching) solenoid actuated propellant isolation valve suitable for the control hydrazine and liquid fluorine to an 800 pound thrust rocket engine is described. The valve features a balanced poppet, utilizing metal bellows, a hard poppet/seat interface and a flexure support system for the internal moving components. This support system eliminates sliding surfaces, thereby rendering the valve free of self generated particles.

  13. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. (United States)

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V


    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  14. Interlinked bistable mechanisms generate robust mitotic transitions. (United States)

    Hutter, Lukas H; Rata, Scott; Hochegger, Helfrid; Novák, Béla


    The transitions between phases of the cell cycle have evolved to be robust and switch-like, which ensures temporal separation of DNA replication, sister chromatid separation, and cell division. Mathematical models describing the biochemical interaction networks of cell cycle regulators attribute these properties to underlying bistable switches, which inherently generate robust, switch-like, and irreversible transitions between states. We have recently presented new mathematical models for two control systems that regulate crucial transitions in the cell cycle: mitotic entry and exit, 1 and the mitotic checkpoint. 2 Each of the two control systems is characterized by two interlinked bistable switches. In the case of mitotic checkpoint control, these switches are mutually activating, whereas in the case of the mitotic entry/exit network, the switches are mutually inhibiting. In this Perspective we describe the qualitative features of these regulatory motifs and show that having two interlinked bistable mechanisms further enhances robustness and irreversibility. We speculate that these network motifs also underlie other cell cycle transitions and cellular transitions between distinct biochemical states.

  15. Dynamics of unidirectionally coupled bistable Henon maps

    International Nuclear Information System (INIS)

    Sausedo-Solorio, J.M.; Pisarchik, A.N.


    We study dynamics of two bistable Henon maps coupled in a master-slave configuration. In the case of coexistence of two periodic orbits, the slave map evolves into the master map state after transients, which duration determines synchronization time and obeys a -1/2 power law with respect to the coupling strength. This scaling law is almost independent of the map parameter. In the case of coexistence of chaotic and periodic attractors, very complex dynamics is observed, including the emergence of new attractors as the coupling strength is increased. The attractor of the master map always exists in the slave map independently of the coupling strength. For a high coupling strength, complete synchronization can be achieved only for the attractor similar to that of the master map. -- Highlights: → We study dynamics of two bistable Henon maps coupled in a master-slave configuration. → Synchronization time for periodic orbits obeys a -1/2 power law with respect to coupling. → For a high coupling strength, the slave map remains bistable. → Complete synchronization can be achieved only when both maps stay at the same attractor.

  16. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I


    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  17. Bistable Si dopants in the GaAs (1 1 0) surface

    International Nuclear Information System (INIS)

    Smakman, E P; Koenraad, P M


    In this review, recent work is discussed on bistable Si dopants in the GaAs (1 1 0) surface, studied by scanning tunneling microscopy (STM). The bistability arises because the dopant atom can switch between a positive and a negative charge state, which are associated with two different lattice configurations. Manipulation of the Si atom charge configuration is achieved by tuning the local band bending with the STM tip. Furthermore, illuminating the sample with a laser also influences the charge state, allowing the operation of the dopant atom as an optical switch. The switching dynamics without illumination is investigated in detail as a function of temperature, lateral tip position, and applied tunneling conditions. A physical model is presented that independently describes the thermal and quantum tunneling contributions to the switching frequency and charge state occupation of a single Si atom. The basic functionality of a memory cell is demonstrated employing a single bistable Si dopant as the active element, using the STM tip as a gate to write and read the information. (topical review)

  18. Bistability in a hybrid optomechanical system: effect of a gain medium (United States)

    Asghari Nejad, A.; Baghshahi, H. R.; Askari, H. R.


    In this paper, we investigate the optical bistability of a hybrid optomechanical system consisting of two coupled cavities: a bare optomechanical cavity (with an oscillating mirror at one end) and a traditional one. The traditional cavity is filled with an optical parametric amplifier (OPA), and an input pump laser is applied to it. The Hamiltonian of the system is written in a rotating frame. The dynamics of the system is driven by the quantum Langevin equations of motion. We demonstrate that the presence of an OPA can dramatically affect the type of stability of the optomechanical cavity. We show that it is possible to create a proper optical bistability for the optomechanical cavity by changing the gain coefficient of the OPA. Also, it is shown that changing the phase of the field driving the OPA has two different effects on the bistability region of the optomechanical cavity. Moreover, we show that by choosing a proper value for the detuning of the traditional cavity it is possible to observe a tristable behavior in the optomechanical cavity.

  19. IEEE International Semiconductor Laser Conference (14th) Held in Maui, Hawaii on September 19-23, 1994 (United States)


    142 Complete Single Mode Wavelength Coverage over 40 nm with a Super Structure Grating DBR Laser. M. Oberg, P.-J. Rigole , S. Nilsson, T. Klinga, L...F. W3.4, Th3.5 Ohlander, U. Thl.6 Rieger, J. T1.1 Miyashita, M. P25 Ohnoki, N. WI.6 Ries, M. W1.2 Miyazaki, T. P42 Ohtoshi, T. P35 Rigole , P.-J. M4.2

  20. Efficiency of a semiconductor diode laser in disinfection of the root canal system in endodontics: An in vitro study

    Directory of Open Access Journals (Sweden)

    Mithra N Hegde


    Full Text Available Context: The success of endodontic treatment depends on the eradication of microbes from the rootcanal system and prevention of reinfection. The root canal is shaped with hand and rotary instruments under constant irrigation to remove the inflamed and necrotic tissue, microbes/biofilms, and other debris from the root canal space. The main goal of instrumentation is to facilitate effective irrigation, disinfection, and filling. Throughout the history of endodontics, endeavors have continuously been made to develop more effective irrigant delivery and agitation systems for root canal irrigation. Aim: The purpose of this study was to evaluate the efficacy of three different newer irrigation delivery techniques; namely Endovac, Stropko Irrigator, and laser disinfection with 5.25% sodium hypochlorite. Materials and Methods: Forty teeth after disinfection by Occupational Safety and Health Administration (OSHA regulations were instrumented and inoculated with bacterial strains of Enterococcusfaecalis. The teeth were divided into four groups, in the experimental group, the irrigants were delivered with the Endovac, Stropko Irrigator, and laser irradiation and the control group which received no irrigation. The samples were incubated in Muller-Hilton media plates and incubated for 24 h. Statistical analysis used: The colony forming units were determined and statistically analyzed using the chi-square test. Results: According to the results obtained, laser irradiation resulted in complete disinfection of the root canal system. The Endovac system resulted in significant disinfection as compared to the Stropko Irrigator system. Conclusion: Laser irradiation resulted in significantly higher antimicrobial effects compared with the Endovac and Stropko irrigation groups when in conjunction with sodium hypochlorite

  1. A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

    International Nuclear Information System (INIS)

    Pailharey, Eric


    The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

  2. Semiconductor nanostructures on silicon. Carrier dynamics, optical amplification and lasing; Halbleiternanostrukturen auf Silizium. Ladungstraegerdynamik, optischer Verstaerker und Laser

    Energy Technology Data Exchange (ETDEWEB)

    Lange, Christoph


    Two material systems that can be grown epitaxially on a silicon substrate are experimentally investigated with respect to their optical properties. Quantum wells (qw) of Germanium were experimentally investigated by spectrally resolved white-light pump-probe-absorption spectroscopy at room temperature. A second material class is Ga(NAsP), which was grown as quantum wells on a silicon substrate matching the lattice constant of the substrate. The basic optical properties were determined using the variable stripe-length method. In order to relate the results to those of established materials, a selection of comparable III/V semiconductors were measured in the same setups. The pump-probe measurements on (GaIn)As quantum wells exhibited a much more rapid scattering. In these material systems, quite similar optical gain values of 10{sup -3}/QW were found with decay times of several 100 ps. For (GaIn)(NAs), slightly higher values were determined. Using the variable stripe-length method, GaSb quantum wells with dot-like morphology were investigated. (orig.)

  3. Progress in rare-earth-doped fibre lasers


    Payne, D.N.


    Single-mode fiber with rare-earth doped cores have stirred considerable interest since their introduction. Already a variety of devices and applications have emerged, including fiber lasers, inline amplifiers, distributed sensors, absorption filters and bistable switches.

  4. Tuning of thermally induced first-order semiconductor-to-metal transition in pulsed laser deposited VO2 epitaxial thin films (United States)

    Behera, Makhes K.; Pradhan, Dhiren K.; Pradhan, Sangram K.; Pradhan, Aswini K.


    Vanadium oxide (VO2) thin films have drawn significant research and development interest in recent years because of their intriguing physical origin and wide range of functionalities useful for many potential applications, including infrared imaging, smart windows, and energy and information technologies. However, the growth of highly epitaxial films of VO2, with a sharp and distinct controllable transition, has remained a challenge. Here, we report the structural and electronic properties of high quality and reproducible epitaxial thin films of VO2, grown on c-axis oriented sapphire substrates using pulsed laser deposition at different deposition pressures and temperatures, followed by various annealing schedules. Our results demonstrate that the annealing of epitaxial VO2 films significantly enhances the Semiconductor to Metal Transition (SMT) to that of bulk VO2 transition. The effect of oxygen partial pressure during the growth of VO2 films creates a significant modulation of the SMT from around room temperature to as high as the theoretical value of 68 °C. We obtained a bulk order transition ≥104 while reducing the transition temperature close to 60 °C, which is comparatively less than the theoretical value of 68 °C, demonstrating a clear and drastic improvement in the SMT switching characteristics. The results reported here will open the door to fundamental studies of VO2, along with tuning of the transition temperatures for potential applications for multifunctional devices.

  5. Fundamental Transverse Mode Selection (TMS#0 of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

    Directory of Open Access Journals (Sweden)

    Henning Fouckhardt


    Full Text Available Previously we focused on fundamental transverse mode selection (TMS#0 of broad area semiconductor lasers (BALs with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE, that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called “retracted once” due to the reflective filter after 2f; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called “retracted twice” with a round-trip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip as well as the image plane (after 4f, two round-trips. Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter M1D2 = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.

  6. Bistable soliton states and switching in doubly inhomogeneously ...

    Indian Academy of Sciences (India)

    Bistable soliton states and switching in doubly inhomogeneously doped fiber couplers. Ajit Kumar. Theoretical aspects of optical solitons Volume 57 Issue 5-6 November-December 2001 pp 969-979 ... Switching between the bistable soliton states in a doubly and inhomogeneously doped fiber system is studied numerically.

  7. Bistable soliton states and switching in doubly inhomogeneously ...

    Indian Academy of Sciences (India)

    Dec. 2001 physics pp. 969–979. Bistable soliton states and switching in doubly inhomogeneously doped fiber couplers. AJIT KUMAR. Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110 016, India. Abstract. Switching between the bistable soliton states in a doubly and inhomogeneously doped.

  8. Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

    NARCIS (Netherlands)

    Ghosh, Anirban; Koster, Gertjan; Rijnders, Augustinus J.H.M.


    Traditionally thermodynamically bistable ferroic materials are used for nonvolatile operations based on logic gates (e.g., in the form of field effect transistors). But, this inherent bistability in these class of materials limits their applicability for adaptive operations. Emulating biological

  9. Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation. (United States)

    Bogdanowicz, J; Kumar, A; Fleischmann, C; Gilbert, M; Houard, J; Vella, A; Vandervorst, W


    This paper demonstrates the increased light absorption efficiency of semiconducting atom probe tips resulting from focused-ion-beam (FIB) preparation. We use transmission electron microscopy to show that semiconducting tips prepared with FIB are surrounded with an amorphized shell. Photomodulated optical reflectance measurements then provide evidence that FIB-induced damage leads to an increase in both sub- and supra-bandgap light absorption efficiency. Using laser-assisted atom probe tomography (La-APT) measurements, we finally show that, for a nanoscale tip geometry, the laser-induced heating of a tip during La-APT is enhanced by the FIB preparation. We conclude that, upon supra-bandgap illumination, the presence of a FIB-amorphized surface dramatically increases the light-induced heat generation inside semiconducting tips during La-APT. Furthermore, we also deduce that, in the intriguing case of sub-bandgap illumination, the amorphization plays a crucial role in the unexpected light absorption. Copyright © 2018 Elsevier B.V. All rights reserved.

  10. Biologically inspired flexible quasi-single-mode random laser: An integration of Pieris canidia butterfly wing and semiconductors (United States)

    Wang, Cih-Su; Chang, Tsung-Yuan; Lin, Tai-Yuan; Chen, Yang-Fang


    Quasi-periodic structures of natural biomaterial membranes have great potentials to serve as resonance cavities to generate ecological friendly optoelectronic devices with low cost. To achieve the first attempt for the illustration of the underlying principle, the Pieris canidia butterfly wing was embedded with ZnO nanoparticles. Quite interestingly, it is found that the bio-inspired quasi-single-mode random laser can be achieved by the assistance of the skeleton of the membrane, in which ZnO nanoparticles act as emitting gain media. Such unique characteristics can be interpreted well by the Fabry-Perot resonance existing in the window-like quasi-periodic structure of butterfly wing. Due to the inherently promising flexibility of butterfly wing membrane, the laser action can still be maintained during the bending process. Our demonstrated approach not only indicates that the natural biological structures can provide effective scattering feedbacks but also pave a new avenue towards designing bio-controlled photonic devices.

  11. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.


    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai


    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. Photoelectrolysis of water at high current density - Use of laser light excitation of semiconductor-based photoelectrochemical cells (United States)

    Wrighton, M. S.; Bocarsley, A. B.; Bolts, J. M.


    In the present paper, some results are given for UV laser light irradiation of the photoanode (SnO2, SrTiO3, or TiO2) in a cell for the light-driven electrolysis of H2O, at radiation intensities of up to 380 W/sq cm. The properties of the anode material are found to be independent of light intensity. Conversion of UV light to stored chemical energy in the form of 2H2/O2 from H2O was driven at a rate of up to 30 W/sq cm. High O2 evolution rates at the irradiated anodes without changes in the current-voltage curves are attributed to the excess oxidizing power associated with photogenerated holes. A test for this sort of hypothesis for H2 evolution at p-type materials is proposed.

  14. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll


    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  15. Laser desorption/ionization mass spectrometry on nanostructured semiconductor substrates: DIOS(TM) and QuickMass(TM) (United States)

    Law, K. P.


    In the era of systems biology, new analytical platforms are under demand. Desorption/ionization on silicon mass spectrometry (DIOS-MS) is a promising high throughput laser mass spectrometry approach that has attracted a lot of attention, and has been commercialized. Another substrate material manufactured by physical method has also been made commercially available under the trade name of QuickMass(TM). These two commercial substrates, DIOS(TM) and QuickMass(TM), were investigated independently from the manufacturers and were characterized by a number of advanced surface techniques. This work determined (1) the correlation between the substrate physicochemical properties and their LDI activity, (2) the feasibility of metabolic profiling from complex biological matrices and (3) the laser desorption/ionization mechanism. The DIOS(TM) substrate was characterized with a thick nano-sized porous layer, a high surface concentration of fluorocarbon and silicon oxides and super-hydrophobicity. In contrast, the QuickMass(TM) substrate consisted of a non-porous germanium thin-film. The relatively high ionization efficiency obtained from the DIOS(TM) substrate was contributed to the fluorosilane manufacturing processes and its porous morphology. Despite the QuickMass(TM) substrate being less effective, it was noted that the use of germanium affords a self-cleaning mechanism and suppresses background interference of mass spectra. The suitability of DIOS(TM) substrates for metabolic profiling of complex biological matrices was demonstrated. DIOS mass spectra of human blood plasma, human urine and animal liver tissue extracts were produced. Suitable extraction methods were found to be important, but relatively simplified approaches were sufficient. Further investigations of the DIOS desorption/ionization mechanism were carried out. The previously proposed sub-surface state reaction could be a molten-solid interfacial state reaction of the substrate and this had a significant

  16. A hierarchical stochastic model for bistable perception.

    Directory of Open Access Journals (Sweden)

    Stefan Albert


    Full Text Available Viewing of ambiguous stimuli can lead to bistable perception alternating between the possible percepts. During continuous presentation of ambiguous stimuli, percept changes occur as single events, whereas during intermittent presentation of ambiguous stimuli, percept changes occur at more or less regular intervals either as single events or bursts. Response patterns can be highly variable and have been reported to show systematic differences between patients with schizophrenia and healthy controls. Existing models of bistable perception often use detailed assumptions and large parameter sets which make parameter estimation challenging. Here we propose a parsimonious stochastic model that provides a link between empirical data analysis of the observed response patterns and detailed models of underlying neuronal processes. Firstly, we use a Hidden Markov Model (HMM for the times between percept changes, which assumes one single state in continuous presentation and a stable and an unstable state in intermittent presentation. The HMM captures the observed differences between patients with schizophrenia and healthy controls, but remains descriptive. Therefore, we secondly propose a hierarchical Brownian model (HBM, which produces similar response patterns but also provides a relation to potential underlying mechanisms. The main idea is that neuronal activity is described as an activity difference between two competing neuronal populations reflected in Brownian motions with drift. This differential activity generates switching between the two conflicting percepts and between stable and unstable states with similar mechanisms on different neuronal levels. With only a small number of parameters, the HBM can be fitted closely to a high variety of response patterns and captures group differences between healthy controls and patients with schizophrenia. At the same time, it provides a link to mechanistic models of bistable perception, linking the group

  17. A hierarchical stochastic model for bistable perception. (United States)

    Albert, Stefan; Schmack, Katharina; Sterzer, Philipp; Schneider, Gaby


    Viewing of ambiguous stimuli can lead to bistable perception alternating between the possible percepts. During continuous presentation of ambiguous stimuli, percept changes occur as single events, whereas during intermittent presentation of ambiguous stimuli, percept changes occur at more or less regular intervals either as single events or bursts. Response patterns can be highly variable and have been reported to show systematic differences between patients with schizophrenia and healthy controls. Existing models of bistable perception often use detailed assumptions and large parameter sets which make parameter estimation challenging. Here we propose a parsimonious stochastic model that provides a link between empirical data analysis of the observed response patterns and detailed models of underlying neuronal processes. Firstly, we use a Hidden Markov Model (HMM) for the times between percept changes, which assumes one single state in continuous presentation and a stable and an unstable state in intermittent presentation. The HMM captures the observed differences between patients with schizophrenia and healthy controls, but remains descriptive. Therefore, we secondly propose a hierarchical Brownian model (HBM), which produces similar response patterns but also provides a relation to potential underlying mechanisms. The main idea is that neuronal activity is described as an activity difference between two competing neuronal populations reflected in Brownian motions with drift. This differential activity generates switching between the two conflicting percepts and between stable and unstable states with similar mechanisms on different neuronal levels. With only a small number of parameters, the HBM can be fitted closely to a high variety of response patterns and captures group differences between healthy controls and patients with schizophrenia. At the same time, it provides a link to mechanistic models of bistable perception, linking the group differences to

  18. Bistability in Coupled Oscillators Exhibiting Synchronized Dynamics (United States)

    Olusola, O. I.; Vincent, U. E.; Njah, A. N.; Olowofela, J. A.


    We report some new results associated with the synchronization behavior of two coupled double-well Duffing oscillators (DDOs). Some sufficient algebraic criteria for global chaos synchronization of the drive and response DDOs via linear state error feedback control are obtained by means of Lyapunov stability theory. The synchronization is achieved through a bistable state in which a periodic attractor co-exists with a chaotic attractor. Using the linear perturbation analysis, the prevalence of attractors in parameter space and the associated bifurcations are examined. Subcritical and supercritical Hopf bifurcations and abundance of Arnold tongues — a signature of mode locking phenomenon are found.

  19. Bistability in mushroom-type metamaterials (United States)

    Fernandes, David E.; Silveirinha, Mário G.


    Here, we study the electromagnetic response of asymmetric mushroom-type metamaterials loaded with nonlinear elements. It is shown that near a Fano resonance, these structures may have a strong tunable, bistable, and switchable response and enable giant nonlinear effects. By using an effective medium theory and full wave simulations, it is proven that the nonlinear elements may allow the reflection and transmission coefficients to follow hysteresis loops, and to switch the metamaterial between "go" and "no-go" states similar to an ideal electromagnetic switch.

  20. Lattice stretching bistability and dynamic heterogeneity

    DEFF Research Database (Denmark)

    Christiansen, Peter Leth; Savin, A. V.; Zolotaryuk, A. V.


    A simple one-dimensional lattice model is suggested to describe the experimentally observed plateau in force-stretching diagrams for some macromolecules. This chain model involves the nearest-neighbor interaction of a Morse-like potential (required to have a saturation branch) and a harmonic second......-neighbor coupling. Under an external stretching applied to the chain ends, the intersite Morse-like potential results in the appearance of a double-well potential within each chain monomer, whereas the interaction between the second neighbors provides a homogeneous bistable (degenerate) ground state, at least...

  1. Stability and morphing characteristics of bistable composite laminates (United States)

    Tawfik, Samer A.

    The focus of the current research is to investigate the potential of using bistable unsymmetric cross-ply laminated composites as a means for achieving structures with morphed characteristics. To this end, an investigation of the design space for laminated composites exhibiting bistable behavior is undertaken and the key parameters controlling their behavior are identified. For this purpose a nonlinear Finite Element methodology using ABAQUS(TM) code is developed to predict both the cured shapes and the stability characteristics of unsymmetric cross-ply laminates. In addition, an experimental program is developed to validate the analytically predicted results through comparison with test data. A new method is proposed for attaching piezoelectric actuators to a bistable panel in order to preserve its favorable stability characteristics as well as optimizing the actuators performance. The developed nonlinear FE methodology is extended to predict the actuation requirements of bistable panels. Actuator requirements, predicted using the nonlinear FE analysis, are found to be in agreement with the test results. The current research also explores the potential for implementing bistable panels for Uninhabited Aerial Vehicle (UAV) wing configuration. To this end, a set of bistable panels is manufactured by combining symmetric and unsymmetric balanced and unbalanced stacking sequence and their stability characteristics are predicted. A preliminary analysis of the aerodynamic characteristics of the manufactured panels is carried out and the aerodynamic benefits of manufactured bistable panel are noted.

  2. Development of FPGA-Based Bistable Unit

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Yoon Hee; Jeong, See Chae; Ha, Jae Hong [Korea Power Engineering Company, Daejeon (Korea, Republic of)


    It is well known that existing nuclear power plant (NPP) control systems contain many components which are becoming obsolete at an increasing rate. Various studies have been conducted to address control system hardware obsolescence. Obsolete analog and digital control systems in non-nuclear power plants are commonly replaced with modern digital control systems, programmable logic controllers (PLC) and distributed control systems (DCS). Field Programmable Gate Arrays (FPGAs) are highlighted as an alternative means for obsolete control systems. FPGAs are advanced digital integrated circuits (ICs) that contain configurable (programmable) blocks of logic along with configurable interconnects between these blocks. Designers can configure (program) such devices to perform a tremendous variety of tasks. FPGAs have been evolved from the technology of Programmable Logic Device (PLD). Nowadays they can contain millions of logic gates by nanotechnology and so be used to implement extremely large and complex functions that previously could be realized only using Application-Specific Integrated Circuits (ASICs). This paper is to present the development of a bistable unit which executes protection functions realized in FPGAs. Functional test is performed to verify its function. An Actel ProASIC3 FPGA platform is implemented as the bistable unit for Plant Protection System (PPS).

  3. On the bistable zone of milling processes. (United States)

    Dombovari, Zoltan; Stepan, Gabor


    A modal-based model of milling machine tools subjected to time-periodic nonlinear cutting forces is introduced. The model describes the phenomenon of bistability for certain cutting parameters. In engineering, these parameter domains are referred to as unsafe zones, where steady-state milling may switch to chatter for certain perturbations. In mathematical terms, these are the parameter domains where the periodic solution of the corresponding nonlinear, time-periodic delay differential equation is linearly stable, but its domain of attraction is limited due to the existence of an unstable quasi-periodic solution emerging from a secondary Hopf bifurcation. A semi-numerical method is presented to identify the borders of these bistable zones by tracking the motion of the milling tool edges as they might leave the surface of the workpiece during the cutting operation. This requires the tracking of unstable quasi-periodic solutions and the checking of their grazing to a time-periodic switching surface in the infinite-dimensional phase space. As the parameters of the linear structural behaviour of the tool/machine tool system can be obtained by means of standard modal testing, the developed numerical algorithm provides efficient support for the design of milling processes with quick estimates of those parameter domains where chatter can still appear in spite of setting the parameters into linearly stable domains. © 2015 The Authors.

  4. Single coil bistable, bidirectional micromechanical actuator (United States)

    Tabat, Ned; Guckel, Henry


    Micromechanical actuators capable of bidirectional and bistable operation can be formed on substrates using lithographic processing techniques. Bistable operation of the microactuator is obtained using a single coil and a magnetic core with a gap. A plunger having two magnetic heads is supported for back and forth linear movement with respect to the gap in the magnetic core, and is spring biased to a neutral position in which the two heads are on each side of the gap in the core. The single electrical coil is coupled to the core and is provided with electrical current to attract one of the heads toward the core by reluctance action to drive the plunger to a limit of travel in one direction. The current is then cut off and the plunger returns by spring action toward the gap, whereafter the current is reapplied to the coil to attract the other head of the plunger by reluctance action to drive the plunger to its other limit of travel. This process can be repeated at a time when switching of the actuator is required.

  5. Ca++ dependent bistability induced by serotonin in spinal motoneurons

    DEFF Research Database (Denmark)

    Hounsgaard, J.; Kiehn, O.


    The plateau potential, responsible for the bistable state of spinal motoneurons, recently described in the decerebrate cat, was suggested to depend on serotonin (Hounsgaard et al. 1984). In an in vitro preparation of the spinal cord of the turtle we now show that serotonin, applied directly...... to the bath, transforms the intrinsic response properties of motoneurons, uncovering a plateau potential and voltage sensitive bistability. The changes induced by serotonin were blocked by Mn++, while the plateau potential and the bistability remained after application of tetrodotoxin. We conclude...

  6. Fabrication Processes for Surface-Emitting via External 45-DEGREE Reflectors, High-Power via Arrayed Ridge - Single-Mode Phase-Locked Aluminum Gallium Arsenide/gallium Arsenide Semiconductor Laser Sources. (United States)

    Porkolab, Gyorgy Arpad

    The fabrication of monolithically integrated configurations of semiconductor lasers incorporating multiple functions is still an open issue today in engineering. A useful set of functions to integrate are: surface-emitting, high -power, phase-locked, single-mode, and collimated laser beam output. In this work new materials and advanced fabrication processes are developed for integrating the first four of the five functions listed. The interest in semiconductor lasers is due to their greater than 90% internal quantum efficiency in converting current-flux to photon-flux, their small size and weight, and their wavelength range from 400 to 1,550 nm. Multitudes of applications are possible for semiconductor laser sources ranging from the low-volume market of satellite-based communications systems to the high-volume market of image display screens. Semimetallic amorphous carbon (SMAC) thin film is introduced as an etch mask for chemically assisted ion beam etching (CAIBE) resulting in smooth etched facets in AlGaAs/GaAs at normal- and 45-degrees- incidence angles. A self-aligned etch technique is introduced using 4 separate photoresist selector-masks on top of a fixed SMAC master -mask on top of the AlGaAs/GaAs substrate to perform 4 separate CAIBE etches at 3 different angles and to 3 different depths to create self-aligned 3-dimensional microstructures of 1.3-μm deep ridge waveguides (RWG), 6-μm deep laser facets, and 11- μm long back-to-back 45-degree reflectors arranged in 3 by 100 arrays. Trenches on topside and underside of laser facets are introduced to deflect current away from laser facets. Silicon-rich nitro-oxide thin film is introduced as triple-use encapsulation to provide chemical passivation of AlGaAs/GaAs, optical anti-reflection coating by being refractive-index matched to AlGaAs/GaAs, and electrical insulation. A pincer-action sample-holder for CAIBE is introduced allowing samples to heat up by ion beam heating. Various surface preparations

  7. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger


    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  8. Semiconductor statistics

    CERN Document Server

    Blakemore, J S


    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  9. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati


    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  10. Lasers: principles, applications and energetic measures; Lasers: principes, applications et mesures energetiques

    Energy Technology Data Exchange (ETDEWEB)

    Subran, C.; Sagaut, J. [Opton Laser International, 91 - Orsay (France); Lapointe, S. [Gentec Electro-Optique (Canada)


    After having recalled the principles of a laser and the properties of the laser beam, the authors describe the following different types of lasers: solid state lasers, fiber lasers, semiconductor lasers, dye lasers and gas lasers. Then, their applications are given. Very high energy lasers can reproduce the phenomenon of nuclear fusion of hydrogen atoms. (O.M.)

  11. On the Selection of Bistability in Genetic Regulatory Circuits (United States)

    Ghim, Cheol-Min; Almaas, Eivind


    Bistability is a defining character of switching and memory devices. Many regulatory circuits observed in cellular reaction networks contain ``bistability motifs'' that endow a cell with efficient and reliable switching between different physiological modes of operation. One of the best characterized system, the lac operon in E. coli, has been shown to display a saddle-node bifurcation when induced by nonmetabolizable lactose analogue inducers, such as isopropylthio-β-D-galactoside (IPTG) and thio-methyl-galactoside (TMG). Motivated by the absence of bifurcation in the same system with its natural inducer, lactose, we studied the conditions for bistability and rationalized its fitness effects in the light of evolution. Stochastic simulations as well as mean-field approach confirm that history-dependent behavior as well as nongenetic inheritance, being realized by bistability motifs, may be beneficial in fluctuating environments.

  12. Bistable responses in bacterial genetic networks: Designs and dynamical consequences (United States)

    Tiwari, Abhinav; Ray, J. Christian J.; Narula, Jatin; Igoshin, Oleg A.


    A key property of living cells is their ability to react to stimuli with specific biochemical responses. These responses can be understood through the dynamics of underlying biochemical and genetic networks. Evolutionary design principles have been well studied in networks that display graded responses, with a continuous relationship between input signal and system output. Alternatively, biochemical networks can exhibit bistable responses so that over a range of signals the network possesses two stable steady states. In this review, we discuss several conceptual examples illustrating network designs that can result in a bistable response of the biochemical network. Next, we examine manifestations of these designs in bacterial master-regulatory genetic circuits. In particular, we discuss mechanisms and dynamic consequences of bistability in three circuits: two-component systems, sigma-factor networks, and a multistep phosphorelay. Analyzing these examples allows us to expand our knowledge of evolutionary design principles for networks with bistable responses. PMID:21385588

  13. Bistable luminescence of trivalent rare-earth ions in crystals

    International Nuclear Information System (INIS)

    Sole, Jose Garcia; Ramirez O, Maria de la; Rodenas, Airan; Jaque, Daniel; Bausa, Luisa; Bettinelli, Marco; Speghini, Adolfo; Cavalli, Enrico; Ivleva, Lioudmila


    In this work, we have examined three new bistable systems based on the luminescence of three different crystals activated with trivalent rare earth ions. We have focussed our attention on Yb 3+ ions activators, for which the most relevant results are obtained. The first crystal, Sr 0.6 Ba 0.4 Nb 2 O 6 , is a ferroelectric material with a relatively low phase transition temperature (∼370 K), which provides bistability in the luminescence of Yb 3+ ions due to the thermal hysteresis associated with phase transition. The second crystal, LiNbO 3 , provides an intrinsic bistability in the luminescence of Yb 3+ ions, which is driven by changes in the excitation intensity. In the third crystal, NdPO 4 , a new mechanism of excitation intensity driven bistability is obtained when activated with Yb 3+ ions, due to a interplay between the Nd 3+ ↔Yb 3+ energy transfer and back transfer processes

  14. Bifurcation of transition paths induced by coupled bistable systems. (United States)

    Tian, Chengzhe; Mitarai, Namiko


    We discuss the transition paths in a coupled bistable system consisting of interacting multiple identical bistable motifs. We propose a simple model of coupled bistable gene circuits as an example and show that its transition paths are bifurcating. We then derive a criterion to predict the bifurcation of transition paths in a generalized coupled bistable system. We confirm the validity of the theory for the example system by numerical simulation. We also demonstrate in the example system that, if the steady states of individual gene circuits are not changed by the coupling, the bifurcation pattern is not dependent on the number of gene circuits. We further show that the transition rate exponentially decreases with the number of gene circuits when the transition path does not bifurcate, while a bifurcation facilitates the transition by lowering the quasi-potential energy barrier.

  15. Bistability, Epigenetics, and Bet-Hedging in Bacteria

    NARCIS (Netherlands)

    Veening, Jan-Willem; Smits, Wiep Klaas; Kuipers, Oscar P.


    Clonal populations of microbial cells often show a high degree of phenotypic variability under homogeneous conditions. Stochastic fluctuations in the cellular components that determine cellular states can cause two distinct subpopulations, a property called bistability Phenotypic heterogeneity can

  16. Switchable dual-wavelength single-longitudinal-mode erbium-doped fiber laser using an inverse-Gaussian apodized fiber Bragg grating filter and a low-gain semiconductor optical amplifier. (United States)

    Lin, Bo; Tjin, Swee Chuan; Zhang, Han; Tang, Dingyuan; Hao, Jianzhong; Dong, Bo; Liang, Sheng


    We present a stable and switchable dual-wavelength erbium-doped fiber laser. In the ring cavity, an inverse-Gaussian apodized fiber Bragg grating serves as an ultranarrow dual-wavelength passband filter, a semiconductor optical amplifier biased in the low-gain regime reduces the gain competition of the two wavelengths, and a feedback fiber loop acts as a mode filter to guarantee a stable single-longitudinal-mode operation. Two lasing lines with a wavelength separation of approximately 0.1 nm are obtained experimentally. A microwave signal at 12.51 GHz is demonstrated by beating the dual wavelengths at a photodetector.

  17. Asymmetric Effects on Escape Rates of Bistable System

    International Nuclear Information System (INIS)

    Wang Canjun; Mei Dongcheng; Dai Zucheng


    The asymmetric effects on the escape rates from the stable states x ± in the bistable system are analyzed. The results indicate that the multiplicative noise and the additive noise always enhance the particle escape from stable states x ± of bistable. However, the asymmetric parameter r enhances the particle escape from stable state x + , and holds back the particle escape from stable state x - . (general)

  18. Analytic descriptions of stochastic bistable systems under force ramp. (United States)

    Friddle, Raymond W


    Solving the two-state master equation with time-dependent rates, the ubiquitous driven bistable system, is a long-standing problem that does not permit a complete solution for all driving rates. Here we show an accurate approximation to this problem by considering the system in the control parameter regime. The results are immediately applicable to a diverse range of bistable systems including single-molecule mechanics.

  19. A genetic bistable switch utilizing nonlinear protein degradation. (United States)

    Huang, Daniel; Holtz, William J; Maharbiz, Michel M


    Bistability is a fundamental property in engineered and natural systems, conferring the ability to switch and retain states. Synthetic bistable switches in prokaryotes have mainly utilized transcriptional components in their construction. Using both transcriptional and enzymatic components, creating a hybrid system, allows for wider bistable parameter ranges in a circuit. In this paper, we demonstrate a tunable family of hybrid bistable switches in E. coli using both transcriptional components and an enzymatic component. The design contains two linked positive feedback loops. The first loop utilizes the lambda repressor, CI, and the second positive feedback loop incorporates the Lon protease found in Mesoplasma florum (mf-Lon). We experimentally tested for bistable behavior in exponential growth phase, and found that our hybrid bistable switch was able to retain its state in the absence of an input signal throughout 40 cycles of cell division. We also tested the transient behavior of our switch and found that switching speeds can be tuned by changing the expression rate of mf-Lon. To our knowledge, this work demonstrates the first use of dynamic expression of an orthogonal and heterologous protease to tune a nonlinear protein degradation circuit. The hybrid switch is potentially a more robust and tunable topology for use in prokaryotic systems.

  20. Does visual attention drive the dynamics of bistable perception? (United States)

    Dieter, Kevin C; Brascamp, Jan; Tadin, Duje; Blake, Randolph


    How does attention interact with incoming sensory information to determine what we perceive? One domain in which this question has received serious consideration is that of bistable perception: a captivating class of phenomena that involves fluctuating visual experience in the face of physically unchanging sensory input. Here, some investigations have yielded support for the idea that attention alone determines what is seen, while others have implicated entirely attention-independent processes in driving alternations during bistable perception. We review the body of literature addressing this divide and conclude that in fact both sides are correct-depending on the form of bistable perception being considered. Converging evidence suggests that visual attention is required for alternations in the type of bistable perception called binocular rivalry, while alternations during other types of bistable perception appear to continue without requiring attention. We discuss some implications of this differential effect of attention for our understanding of the mechanisms underlying bistable perception, and examine how these mechanisms operate during our everyday visual experiences.

  1. Genes contribute to the switching dynamics of bistable perception. (United States)

    Shannon, Robert W; Patrick, Christopher J; Jiang, Yi; Bernat, Edward; He, Sheng


    Ordinarily, the visual system provides an unambiguous representation of the world. However, at times alternative plausible interpretations of a given stimulus arise, resulting in a dynamic perceptual alternation of the differing interpretations, commonly referred to as bistable or rivalrous perception. Recent research suggests that common neural mechanisms may be involved in the dynamics of very different types of bistable phenomena. Further, evidence has emerged that genetic factors may be involved in determining the rate of switch for at least one form of bistable perception, known as binocular rivalry. The current study evaluated whether genetic factors contribute to the switching dynamics for distinctly different variants of bistable perception in the same participant sample. Switching rates were recorded for MZ and DZ twin participants in two different bistable perception tasks, binocular rivalry and the Necker Cube. Strong concordance in switching rates across both tasks was evident for MZ but not DZ twins, indicating that genetic factors indeed contribute to the dynamics of multiple forms of bistable perception.

  2. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.


    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  3. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C


    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  4. Laser ablation principles and applications

    CERN Document Server


    Laser Ablation provides a broad picture of the current understanding of laser ablation and its many applications, from the views of key contributors to the field. Discussed are in detail the electronic processes in laser ablation of semiconductors and insulators, the post-ionization of laser-desorbed biomolecules, Fourier-transform mass spectroscopy, the interaction of laser radiation with organic polymers, laser ablation and optical surface damage, laser desorption/ablation with laser detection, and laser ablation of superconducting thin films.

  5. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank


    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  6. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.


    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  7. Flip-flop between soft-spring and hard-spring bistabilities in the ...

    Indian Academy of Sciences (India)

    freedom Toda oscillator that originally exhibits soft-spring bistability with counterclockwise hysteresis cycle. We observe that if the truncation is made third order, the harmonic bistability changes to hard-spring type with a clockwise hysteresis cycle.

  8. Controlling the optical bistability via quantum interference in a four-level N-type atomic system

    International Nuclear Information System (INIS)

    Sahrai, M.; Asadpour, S.H.; Mahrami, H.; Sadighi-Bonabi, R.


    We investigate the optical bistability (OB) and optical multi-stability (OM) in a four-level N-type atomic system. The effect of spontaneously generated coherence (SGC) on OB and OM is then discussed. It is found that SGC makes the medium phase dependent, so the optical bistability and multi-stability threshold can be controlled via relative phase between applied fields. We realize that the frequency detuning of probe and coupling fields with the corresponding atomic transition plays an important role in creation OB and OM. Moreover, the effect of laser coupling fields and an incoherent pumping field on reduction of OB and OM threshold is then discussed. - Highlights: → We modulate the optical bistability (OB) in a four-level N-type atomic system. The effect of spontaneously generated coherence on OB is discussed. → Spontaneously generated coherence makes the medium phase dependent. → The frequency of coupling field can reduce OB threshold. → We discuss the effect of an incoherent pumping field on reduction of OB threshold.

  9. In Silico Evolved lac Operons Exhibit Bistability for Artificial Inducers, but Not for Lactose


    van Hoek, M. J. A.; Hogeweg, P.


    Bistability in the lac operon of Escherichia coli has been widely studied, both experimentally and theoretically. Experimentally, bistability has been observed when E. coli is induced by an artificial, nonmetabolizable, inducer. However, if the lac operon is induced with lactose, the natural inducer, bistability has not been demonstrated. We derive an analytical expression that can predict the occurrence of bistability both for artificial inducers and lactose. We find very different condition...

  10. Optical bistability induced by quantum coherence in a negative index atomic medium

    International Nuclear Information System (INIS)

    Zhang Hong-Jun; Sun Hui; Li Jin-Ping; Yin Bao-Yin; Guo Hong-Ju


    Bistability behaviors in an optical ring cavity filled with a dense V-type four-level atomic medium are theoretically investigated. It is found that the optical bistability can appear in the negative refraction frequency band, while both the bistability and multi-stability can occur in the positive refraction frequency bands. Therefore, optical bistability can be realized from conventional material to negative index material due to quantum coherence in our scheme. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  11. Evaluation of bistable systems versus matched filters in detecting bipolar pulse signals


    Duan, Fabing; Abbott, Derek; Gao, Qisheng


    This paper presents a thorough evaluation of a bistable system versus a matched filter in detecting bipolar pulse signals. The detectability of the bistable system can be optimized by adding noise, i.e. the stochastic resonance (SR) phenomenon. This SR effect is also demonstrated by approximate statistical detection theory of the bistable system and corresponding numerical simulations. Furthermore, the performance comparison results between the bistable system and the matched filter show that...

  12. Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity (United States)

    Chen, Ting-Wei; Cheng, Szu-Cheng


    This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

  13. Optical nonlinearity due to nonbosonity of Wannier-Mott excitons in highly excited semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Hoang Xuan Nguyen


    Shown that the nonbosonity of Wannier-Mott excitons leads to the energy level blue shift which might result in optical bistability. The dependences of the complex dielectric function on both exciton density and pump laser intensity are considered and numerically evaluated for CdS. (author). 10 refs., 5 figs

  14. The derivation of a bistable criterion for double V-beam mechanisms

    International Nuclear Information System (INIS)

    Wu, Cho-Chun; Chen, Rongshun; Lin, Meng-Ju


    This study presents the theoretical derivation of the discriminant D as a structural and material criterion for determining whether bistability can occur in micromechanically bistable mechanisms. When D < 0, the mechanism displays bistable behavior if an appropriate force is applied to push the bistable mechanism, whereas when D > 0, bistable behavior cannot occur. The proposed V-beam bistable mechanism was successfully fabricated with various beam lengths and tilted angles. The experiments conducted in this study validated the theoretical study of bistability. A comparison of the theoretical solutions and experimental results shows good agreement. Results further show that to design a bistable V-beam mechanism, the tilted angle should be larger for the same beam length, whereas the beam length should be longer for the same tilted angle. The developed discriminant D can be used to predict if a bistable mechanism can achieve bistable behavior based on structural sizes and material properties. Consequently, researchers can reduce trial-and-error experiments when designing a bistable mechanism. A V-beam with a larger tilted angle of up to 5° was successfully fabricated to act as a bistable mechanism, compared to a 3.5° tilted angle in existing studies. Consequently, the proposed method has the advantages of shorter beam lengths and smaller device areas. (paper)

  15. Bistability of mangrove forests and competition with freshwater plants (United States)

    Jiang, Jiang; Fuller, Douglas O; Teh, Su Yean; Zhai, Lu; Koh, Hock Lye; DeAngelis, Donald L.; Sternberg, L.D.S.L.


    Halophytic communities such as mangrove forests and buttonwood hammocks tend to border freshwater plant communities as sharp ecotones. Most studies attribute this purely to underlying physical templates, such as groundwater salinity gradients caused by tidal flux and topography. However, a few recent studies hypothesize that self-reinforcing feedback between vegetation and vadose zone salinity are also involved and create a bistable situation in which either halophytic dominated habitat or freshwater plant communities may dominate as alternative stable states. Here, we revisit the bistability hypothesis and demonstrate the mechanisms that result in bistability. We demonstrate with remote sensing imagery the sharp boundaries between freshwater hardwood hammock communities in southern Florida and halophytic communities such as buttonwood hammocks and mangroves. We further document from the literature how transpiration of mangroves and freshwater plants respond differently to vadose zone salinity, thus altering the salinity through feedback. Using mathematical models, we show how the self-reinforcing feedback, together with physical template, controls the ecotones between halophytic and freshwater communities. Regions of bistability along environmental gradients of salinity have the potential for large-scale vegetation shifts following pulse disturbances such as hurricane tidal surges in Florida, or tsunamis in other regions. The size of the region of bistability can be large for low-lying coastal habitat due to the saline water table, which extends inland due to salinity intrusion. We suggest coupling ecological and hydrologic processes as a framework for future studies.

  16. Dynamic control of a bistable wing under aerodynamic loading

    International Nuclear Information System (INIS)

    Bilgen, Onur; Arrieta, Andres F; Friswell, Michael I; Hagedorn, Peter


    The aerodynamic evaluation of a dynamic control technique applied to a bistable unsymmetrical cross-ply composite plate with surface bonded piezoelectric actuators is presented. The plate is clamped on one end to form a low-aspect-ratio wing. A previously proposed dynamic control method, utilizing bending resonance in different stable equilibrium positions, is used to induce snap-through between the two equilibrium states. Compared to quasi-static actuation, driving the bistable plate near resonance using surface bonded piezoelectric materials requires, theoretically, a lower peak excitation voltage to achieve snap-through. First, a set of extensive wind tunnel experiments are conducted on the passive bistable wing to understand the change in the dynamic behavior under various aerodynamic conditions. The passive wing demonstrated sufficient bending stiffness to sustain its shape under aerodynamic loading while preserving the desired bistable behavior. Next, by the use of the resonant control technique, the plate is turned into an effectively monostable structure, or alternatively, both stable equilibrium positions can be reached actively from the other stable equilibrium. Dynamic forward and reverse snap-through is demonstrated in the wind tunnel which shows both the effectiveness of the piezoelectric actuation as well as the load carrying capability of both states of the bistable wing. (paper)

  17. Oscillations in the bistable regime of neuronal networks. (United States)

    Roxin, Alex; Compte, Albert


    Bistability between attracting fixed points in neuronal networks has been hypothesized to underlie persistent activity observed in several cortical areas during working memory tasks. In network models this kind of bistability arises due to strong recurrent excitation, sufficient to generate a state of high activity created in a saddle-node (SN) bifurcation. On the other hand, canonical network models of excitatory and inhibitory neurons (E-I networks) robustly produce oscillatory states via a Hopf (H) bifurcation due to the E-I loop. This mechanism for generating oscillations has been invoked to explain the emergence of brain rhythms in the β to γ bands. Although both bistability and oscillatory activity have been intensively studied in network models, there has not been much focus on the coincidence of the two. Here we show that when oscillations emerge in E-I networks in the bistable regime, their phenomenology can be explained to a large extent by considering coincident SN and H bifurcations, known as a codimension two Takens-Bogdanov bifurcation. In particular, we find that such oscillations are not composed of a stable limit cycle, but rather are due to noise-driven oscillatory fluctuations. Furthermore, oscillations in the bistable regime can, in principle, have arbitrarily low frequency.

  18. Non-resonant energy harvesting via an adaptive bistable potential

    International Nuclear Information System (INIS)

    Hosseinloo, Ashkan Haji; Turitsyn, Konstantin


    Narrow bandwidth and easy detuning, inefficiency in broadband and non-stationary excitations, and difficulties in matching a linear harvester’s resonance frequency to low-frequency excitations at small scales, have convinced researchers to investigate nonlinear, and in particular bistable, energy harvesters in recent years. However, bistable harvesters suffer from co-existing low and high energy orbits, and sensitivity to initial conditions, and have recently been proven inefficient when subjected to many real-world random and non-stationary excitations. Here, we propose a novel non-resonant buy-low-sell-high strategy that can significantly improve the harvester’s effectiveness at low frequencies in a much more robust fashion. This strategy could be realized by a passive adaptive bistable system. Simulation results confirm the high effectiveness of the adaptive bistable system following a buy-low-sell-high logic when subjected to harmonic and random non-stationary walking excitations compared to its conventional bistable and linear counterparts. (paper)

  19. Chaos in a new bistable rotating electromechanical system

    International Nuclear Information System (INIS)

    Tsapla Fotsa, R.; Woafo, P.


    Highlights: • A new electromechanical system with rotating arm and bistable potential energy is studied. • The bistability is generated by the interaction of three permanent magnets, one fixed at the end of the arm and two other fixed at equal distance relative to the central position of the arm. • It exhibits dissipative and Hamiltonian chaos. • Such a bistable electromechanical system can be used as the actuation part of chaotic sieves and mixers. - Abstract: A device consisting of an induction motor activating a rotating rigid arm is designed and comprises a bistable potential due to the presence of three permanent magnets. Its mathematical equations are established and the numerical results both in the absence and in the presence of magnets are compared. The generation of chaotic behavior is achieved using two different external excitations: sinewave and square wave. In the presence of magnets, the system presents periodic and dissipative chaotic dynamics. Approximating the global potential energy to a bistable quartic potential, the Melnikov method is used to derive the conditions for the appearance of Hamiltonian chaos. Such a device can be used for industrial and domestic applications for mixing and sieving activities.

  20. Frontoparietal cortex mediates perceptual transitions in bistable perception. (United States)

    Weilnhammer, Veith A; Ludwig, Karin; Hesselmann, Guido; Sterzer, Philipp


    During bistable vision, perception oscillates between two mutually exclusive percepts despite constant sensory input. Greater BOLD responses in frontoparietal cortex have been shown to be associated with endogenous perceptual transitions compared with "replay" transitions designed to closely match bistability in both perceptual quality and timing. It has remained controversial, however, whether this enhanced activity reflects causal influences of these regions on processing at the sensory level or, alternatively, an effect of stimulus differences that result in, for example, longer durations of perceptual transitions in bistable perception compared with replay conditions. Using a rotating Lissajous figure in an fMRI experiment on 15 human participants, we controlled for potential confounds of differences in transition duration and confirmed previous findings of greater activity in frontoparietal areas for transitions during bistable perception. In addition, we applied dynamic causal modeling to identify the neural model that best explains the observed BOLD signals in terms of effective connectivity. We found that enhanced activity for perceptual transitions is associated with a modulation of top-down connectivity from frontal to visual cortex, thus arguing for a crucial role of frontoparietal cortex in perceptual transitions during bistable perception.