WorldWideScience

Sample records for berkelium tellurides

  1. New berkelium isotope: 242Bk

    International Nuclear Information System (INIS)

    A new isotope of berkelium, 242Bk, was produced with a cross section of approx. 10 μb in reactions of boron on uranium and nitrogen on thorium. It decays by electron capture with a half-life of 7 +- 1.3 minutes. The branching ratio for this isotope for alpha decay is less than 1% and that for spontaneous fission is less than 0.03%. 2 figures, 2 tables

  2. Characterization of berkelium(III) dipicolinate and borate compounds in solution and the solid state.

    Science.gov (United States)

    Silver, Mark A; Cary, Samantha K; Johnson, Jason A; Baumbach, Ryan E; Arico, Alexandra A; Luckey, Morgan; Urban, Matthew; Wang, Jamie C; Polinski, Matthew J; Chemey, Alexander; Liu, Guokui; Chen, Kuan-Wen; Van Cleve, Shelley M; Marsh, Matthew L; Eaton, Teresa M; van de Burgt, Lambertus J; Gray, Ashley L; Hobart, David E; Hanson, Kenneth; Maron, Laurent; Gendron, Frédéric; Autschbach, Jochen; Speldrich, Manfred; Kögerler, Paul; Yang, Ping; Braley, Jenifer; Albrecht-Schmitt, Thomas E

    2016-08-26

    Berkelium is positioned at a crucial location in the actinide series between the inherently stable half-filled 5f(7) configuration of curium and the abrupt transition in chemical behavior created by the onset of a metastable divalent state that starts at californium. However, the mere 320-day half-life of berkelium's only available isotope, (249)Bk, has hindered in-depth studies of the element's coordination chemistry. Herein, we report the synthesis and detailed solid-state and solution-phase characterization of a berkelium coordination complex, Bk(III)tris(dipicolinate), as well as a chemically distinct Bk(III) borate material for comparison. We demonstrate that berkelium's complexation is analogous to that of californium. However, from a range of spectroscopic techniques and quantum mechanical calculations, it is clear that spin-orbit coupling contributes significantly to berkelium's multiconfigurational ground state. PMID:27563098

  3. Lead telluride alloy thermoelectrics

    Directory of Open Access Journals (Sweden)

    Aaron D. LaLonde

    2011-11-01

    Full Text Available The opportunity to use solid-state thermoelectrics for waste heat recovery has reinvigorated the field of thermoelectrics in tackling the challenges of energy sustainability. While thermoelectric generators have decades of proven reliability in space, from the 1960s to the present, terrestrial uses have so far been limited to niche applications on Earth because of a relatively low material efficiency. Lead telluride alloys were some of the first materials investigated and commercialized for generators but their full potential for thermoelectrics has only recently been revealed to be far greater than commonly believed. By reviewing some of the past and present successes of PbTe as a thermoelectric material we identify the issues for achieving maximum performance and successful band structure engineering strategies for further improvements that can be applied to other thermoelectric materials systems.

  4. Cadmium telluride nuclear radiation detectors

    International Nuclear Information System (INIS)

    The characteristics and performance of undoped high resistivity cadmium telluride detectors are compared to chlorine lifted counters. It is shown, in particular, that Undodep CdTe is in fact aluminium doped and that compensation occurs, as an silicon or germanium, by pair and triplet formation between the group III donor and the doubly charged cadmium vacancy acceptor. Furthermore, in chlorine doped samples, the polarization effect results from the unpaired level at Esub(c)-0,6eV

  5. Method of making a thin film cadmium telluride solar cell

    International Nuclear Information System (INIS)

    A method for making a photovoltaic cell is described comprising the steps of: (a) depositing a transparent or semi-transparent conductive window layer onto a substrate; (b) depositing a layer of cadmium telluride including phosphorus onto the window layer; (c) depositing a layer of lead telluride onto the layer of cadmium telluride; and (d) depositing a metallic electrode onto the lead telluride layer

  6. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. (University of South Florida, Tampa, FL (United States))

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  7. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  8. Cadmium zinc telluride spectral modeling

    International Nuclear Information System (INIS)

    Cadmium zinc telluride (CZT) detectors are the highest resolution room temperature gamma-ray detectors available for isotopic analysis. As with germanium detectors, accurate isotopic analysis using spectra requires peak deconvolution. The CZT peak shapes are asymmetric, with a long low energy tail. The asymmetry is a result of the physics of the electron/hole transport in the semiconductor. An accurate model of the physics of the electron/hole transport through an electric field will allow the parameterization of the peak shapes as a function of energy. In turn this leads to the ability to perform accurate spectral deconvolution and therefore accurate isotopic analysis. The model and the peak-shape parameterization as a function of energy will be presented

  9. Electrodeposition and Characterization of Bismuth Telluride Nanowires

    Science.gov (United States)

    Frantz, C.; Stein, N.; Gravier, L.; Granville, S.; Boulanger, C.

    2010-09-01

    In this work, we report thermoelectric measurements on electroplated bismuth telluride nanowires. Porous polycarbonate membranes, obtained by ion-track irradiation lithography, were chosen as electroplating templates. Bismuth telluride nanowires were achieved in acidic media under potentiostatic conditions at -100 mV versus saturated silver chloride electrode. The filling ratio of the pores was increased to 80% by adding dimethyl sulfoxide to the electrolyte. Whatever the experimental conditions, the nanowires were polycrystalline in the rhombohedral phase of Bi2Te3. Finally, the power output of arrays of bismuth telluride nanowires was analyzed as a function of load resistance. The results were strongly dependent on the internal resistance, which can be significantly reduced by the presence of dimethyl sulfoxide during electroplating.

  10. Cadmium telluride quantum dots advances and applications

    CERN Document Server

    Donegan, John

    2013-01-01

    Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign

  11. Electron mobility in mercury cadmium telluride

    Science.gov (United States)

    Patterson, James D.

    1988-01-01

    A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

  12. New Layered Ternary Transition-Metal Tellurides

    Science.gov (United States)

    Mar, Arthur

    Several new ternary transition-metal tellurides, a class of compounds hitherto largely unexplored, have been synthesized and characterized. These are layered materials whose structures have been determined by single -crystal X-ray diffraction methods. The successful preparation of the compound TaPtTe_5 was crucial in developing an understanding of the MM'Te_5 (M = Nb, Ta; M' = Ni, Pd, Pt) series of compounds, which adopt either of two possible closely-related layered structures. Interestingly, the compound TaPdTe _5 remains unknown. Instead, the compound Ta_4Pd_3Te _{16} has been prepared. Its structure is closely related to that of the previously prepared compound Ta_3Pd _3Te_{14}. The physical properties of these compounds have been measured and correlated with the metal substitutions and interlayer separations. A new series of compounds, MM'Te _4 (M = Nb, Ta; M' = Ru, Os, Rh, Ir), has been discovered. The structure of NbIrTe_4 serves as a prototype: it is an ordered variant of the binary telluride WTe_2. Electronic band-structure calculations have been performed in order to rationalize the trends in metal-metal and tellurium -tellurium bonding observed in WTe_2 and the MM'Te_4 phases. Extension of these studies to include main-group metals has resulted in the synthesis of the new layered ternary germanium tellurides TiGeTe_6, ZrGeTe_4 , and HfGeTe_4. Because germanium can behave ambiguously in its role as a metalloid element, it serves as an anion by capping the metal-centered trigonal prisms and also as a cation in being coordinated in turn by other tellurium atoms in a trigonal pyramidal fashion. Structural relationships among these compounds are illustrated through the use of bicapped trigonal prisms and trigonal pyramids as the basic structural building blocks. The electrical and magnetic properties of these compounds have been measured. Insight into the unusual bonding and physical properties of these germanium-containing compounds has been gained through

  13. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  14. Avalanche multiplication of electrons and holes in cadmium telluride

    CERN Document Server

    Demich, N V

    2001-01-01

    Determination of the ratio of the coefficients of the electrons and holes of the diode structures impact ionization is carried out with the purpose of optimizing the parameters of the avalanche diodes from the cadmium telluride. It is shown experimentally, that the process of the impact ionization in the cadmium telluride is stimulated by holes. The ratio of the coefficients of the holes and electrons impact ionization constitutes approx = 30-40

  15. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  16. The Archaean gold-telluride-sulphide and gold-telluride mineralisation of a multiple stage hydrothermal vein deposit at the Commoner Mine, Zimbabwe

    International Nuclear Information System (INIS)

    The Commoner Mine is situated on the western edge of the Midlands greenstone belt, 50 km west-southwest of Kadoma, Zimbabwe. Current geological interest in this deposit was initiated by the presence of coarse grained telluride minerals in ore exposed on 21 level in 1978. The deposit is a hydrothermal quartz-calcite vein. It was found that coarse grained gold-silver tellurides fill fractures which transect the telluride breccia. Comparison of the physical and mineralogical characteristics of the Commoner orebody with those of the Tertiary gold-telluride deposits of the Circum Pacific Belt and the Archaean deposits of Canada and Australia indicates that this mineralisation was probably deposited in a near-surface environment. It was found that the gold-telluride ores of the Commoner Mine display features characteristic of both plutonic-hydrothermal and volcanic-hydrothermal styles of telluride mineralisation

  17. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators

    International Nuclear Information System (INIS)

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb1-xCaxTe were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric properties remain

  18. High-temperature thermoelectric behavior of lead telluride

    Indian Academy of Sciences (India)

    M P Singh; C M Bhandari

    2004-06-01

    Usefulness of a material in thermoelectric devices is temperature specific. The central problem in thermoelectric material research is the selection of materials with high figure-of-merit in the given temperature range of operation. It is of considerable interest to know the utility range of the material, which is decided by the degrading effect of minority carrier conduction. Lead telluride is among the best-known materials for use in the temperature range 400—900 K. This paper presents a detailed theoretical investigation of the role of minority carriers in degrading the thermoelectric properties of lead telluride and outlines the temperature range for optimal performance.

  19. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.

    1991-01-01

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C.The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities can result in conversion efficiencies over 15 percent.

  20. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie;

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formatio...

  1. Understanding the Meaning of the Entrance Image: The Telluride Process.

    Science.gov (United States)

    Garnham, Harry L.; Garnham, Penny

    1989-01-01

    Describes a project to define the images of Telluride (Colorado) held by its residents and tourists and contributing to sense of place. Discusses the design of the town's entry points and efforts to maintain their visual environments in harmony with the town's defined character during ongoing community development. (SV)

  2. Kelvin Probe Studies of Cesium Telluride Photocathode for AWA Photoinjector

    CERN Document Server

    Wisniewski, Eric; Yusof, Zikri; Spentzouris, Linda; Terry, Jeff; Harkay, Katherine

    2012-01-01

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (~50 nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin Probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating.

  3. The Cadmium Zinc Telluride Imager on AstroSat

    CERN Document Server

    Bhalerao, V; Vibhute, A; Pawar, P; Rao, A R; Hingar, M K; Khanna, Rakesh; Kutty, A P K; Malkar, J P; Patil, M H; Arora, Y K; Sinha, S; Priya, P; Samuel, Essy; Sreekumar, S; Vinod, P; Mithun, N P S; Vadawale, S V; Vagshette, N; Navalgund, K H; Sarma, K S; Pandiyan, R; Seetha, S; Subbarao, K

    2016-01-01

    The Cadmium Zinc Telluride Imager (CZTI) is a high energy, wide-field imaging instrument on AstroSat. CZT's namesake Cadmium Zinc Telluride detectors cover an energy range from 20 keV to > 200 keV, with 11% energy resolution at 60 keV. The coded aperture mask attains an angular resolution of 17' over a 4.6 deg x 4.6 deg (FWHM) field of view. CZTI functions as an open detector above 100 keV, continuously sensitive to GRBs and other transients in about 30% of the sky. The pixellated detectors are sensitive to polarisation above ~100 keV, with exciting possibilities for polarisation studies of transients and bright persistent sources. In this paper, we provide details of the complete CZTI instrument, detectors, coded aperture mask, mechanical and electronic configuration, as well as data and products.

  4. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. [University of South Florida, Tampa, FL (United States)

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  5. Transient Response of Cadmium Telluride Modules to Light Exposure: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C.; del Cueto, J.; Albin, D. S.; Petersen, C.; Tyler, L.; TamizhMani, G.

    2011-07-01

    Commercial cadmium telluride (CdTe) photovoltaic (PV) modules from three different manufacturers were monitored for performance changes during indoor and outdoor light-exposure. Short-term transients in Voc were recorded on some modules, with characteristic times of ~1.1 hours. Outdoor performance data shows a similar drop in Voc after early morning light exposure. Preliminary analysis of FF changes show light-induced changes on multiple time scales, including a long time scale.

  6. Tunneling behavior of bismuth telluride nanoplates in electrical transport

    OpenAIRE

    Eginligil, Mustafa; Zhang, Weiqing; Kalitsov, Alan; Lu, Xianmao; Yang, Hyunsoo

    2012-01-01

    We study the electrical transport properties of ensembles of bismuth telluride (Bi2Te3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi2Te3 nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a s...

  7. Solvothermal synthesis and study of nonlinear optical properties of nanocrystalline thallium doped bismuth telluride

    Energy Technology Data Exchange (ETDEWEB)

    Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India); Parola, Sowmendran; Avinash Chunduri, L.A.; Aditha, Saikiran; Sai Muthukumar, V; Mimani Rattan, Tanu; Kamisetti, Venkataramaniah [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

    2012-05-15

    Nanocrystalline Bismuth telluride and thallium (4 mol %) doped Bismuth telluride were synthesized through hydrothermal method. The as-prepared products were characterized using Powder X-ray Diffraction, High Resolution Transmission Electron Microscopy, Energy Dispersive X-Ray Spectroscopy, UV-Visible spectroscopy and Fourier Transform Infrared Spectroscopy. Powder XRD results revealed the crystalline nature of the obtained phases. HRTEM showed the particle-like morphology of the products. The decrease in the absorption coefficient due to thallium doping was observed in FTIR spectra. The intensity dependent nonlinear optical properties of nanocrystalline bismuth telluride and thallium doped bismuth telluride were studied using the Z-scan technique in open-aperture configuration. Bismuth telluride doped with thallium showed enhanced nonlinear optical response compared to pristine bismuth telluride and hence could be used as a potential candidate for optical power limiting applications. - Graphical Abstract: Nonlinear transmission (Z-scan) curves of nanocrystalline bismuth telluride ({Delta}) and thallium doped bismuth telluride ({open_square}). Thallium doped bismuth telluride showed enhanced nonlinear absorption compared to bismuth telluride. Inset: TEM micrograph of bismuth telluride nanocrystallites. Highlights: Black-Right-Pointing-Pointer Synthesis of Nanocrystalline Bi{sub 2}Te{sub 3} and Thallium doped Bi{sub 2}Te{sub 3} through solvothermal method. Black-Right-Pointing-Pointer Reduced absorption coefficient due to thallium doping found from IR spectroscopy. Black-Right-Pointing-Pointer Open-aperture Z-scan technique for nonlinear optical studies. Black-Right-Pointing-Pointer Two photon absorption based model for theoretical fitting of Z-scan data. Black-Right-Pointing-Pointer Enhanced nonlinear absorption in Thallium doped Bi{sub 2}Te{sub 3} - potential candidate for optical power limiting applications.

  8. Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

    Science.gov (United States)

    Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Park, Yeonjoon (Inventor); Lee, Kunik (Inventor)

    2014-01-01

    Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

  9. Predeposition ultraviolet treatment for adhesion improvement of thin films on mercury cadmium telluride

    International Nuclear Information System (INIS)

    Poor film adhesion to mercury cadmium telluride is a problem of general concern because of the low film deposition temperatures (11 cm-2 and slow interface state densities of 4x1010 cm-2 were obtained at 100 K for aluminum nitiride/mercury cadmium telluride metal-insulator-semiconductor structures which had undergone the treatment

  10. The photocorrosion of n-cadmium telluride and its suppression

    Science.gov (United States)

    Curran, J. S.

    1980-09-01

    The photoelectrochemical properties of n-type cadmium telluride were studied in water and five other organic solvents, with a view to suppression of the photocorrosion reaction which prevents this and other n-type small bandgap semiconductors from being used in a practical semiconductor-electrolyte junction solar cell. Only the low donicity organic solvents propylene carbonate and methyl nitrate reduce the corrosion rate significantly. A stable photocurrent can be obtained using a solution of ferrocene in these two solvents but analysis of photoelectrolyzed solutions revealed a slow photocorrosion. The dependence of the flatband potential and of the practical significance with respect to solar cell applications considered.

  11. An evaluation of cadmium telluride detectors for computer assisted tomography.

    Science.gov (United States)

    Chu, D; Kaufman, L; Hosier, K; Hoenninger, J

    1978-11-01

    Cadmium telluride (CdTe) presents a set of extremely attractive features as an X-ray detector for computer assisted tomography (CAT). It is stable and easily handled; has a high detection efficiency and very efficient conversion of energy to charge; and permits a high element density in a compact configuration. Unfortunately, effects due to "polarization," "tailing," high and variable leakage currents, and long "memory" are incompatible with the needs of CAT instrumentation. Pulse-processing techniques have allowed us to eliminate these problems in positive-sensitive detectors, thus opening the way for utilization of CdTe in CAT. PMID:711945

  12. Surface Passivation of Mercury-Cadmium-Telluride Infrared Detectors

    Directory of Open Access Journals (Sweden)

    R. Singh

    1991-07-01

    Full Text Available The theoretical considerations and practical aspects of passivating insulator films, in the context of their use on high-performance mercury cadmium telluride (MCT infrared detectors are reviewed. The methods of growth, the interface properties and the applications of both native and deposited passivant films have been discussed. Native films include anodic, chemical, photochemical, and plasma oxides as well as anodic sulphides and fluoro-oxides. Deposited films include ZnS, photo-CVD-grown SiO2, CDTe, and SiN/sub x/. The properties of all these passivant films on MCT have been summarized.

  13. Study of rectification at the metal-cadmium telluride contact

    International Nuclear Information System (INIS)

    The barrier heights at the contact between metals and N or P type cadmium telluride have been determined. Various surface treatments have been used for the semiconductor: lapping, polishing and etching in a bromine in methanol solution. Depending on these preparation differences of about 0.1 eV have been observed for the barrier height which in any case was no more than 0.9 - 1.0 eV. These results can not be explained by only considering the Schottky theory of rectification

  14. Origin of anomalous anharmonic lattice dynamics of lead telluride

    CERN Document Server

    Shiga, Takuma; Hori, Takuma; Delaire, Olivier; Shiomi, Junichiro

    2015-01-01

    The origin of the anomalous anharmonic lattice dynamics of lead telluride is investigated using molecular dynamics simulations with interatomic force constants (IFCs) up to quartic terms obtained from first principles. The calculations reproduce the peak asymmetry of the radial distribution functions and the double peaks of transverse optical phonon previously observed with neutron diffraction and scattering experiments. They are identified to be due to the extremely large nearest-neighbor cubic IFCs in the [100] direction. The outstanding strength of the nearest-neighbor cubic IFCs relative to the longer-range ones explains the reason why the distortion in the radial distribution function is local.

  15. Kelvin probe studies of cesium telluride photocathode for AWA photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Wisniewski, Eric E., E-mail: ewisniew@anl.gov [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Velazquez, Daniel [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Yusof, Zikri, E-mail: zyusof@hawk.iit.edu [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Spentzouris, Linda; Terry, Jeff [Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Sarkar, Tapash J. [Rice University, 6100 Main, Houston, TX 77005 (United States); Harkay, Katherine [Accelerator Science Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States)

    2013-05-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (≈50nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating. -- Highlights: ► The correlation between Quantum Efficiency (QE) and work function. ► How QE and work function evolve together. ► Rejuvenation of the photocathode via heating and the effect on work function. ► The effects on the work function due to exposure to UV light.

  16. Cadmium Telluride-Titanium Dioxide Nanocomposite for Photodegradation of Organic Substance.

    Science.gov (United States)

    Ontam, Areeporn; Khaorapapong, Nithima; Ogawa, Makoto

    2015-12-01

    Cadmium telluride-titanium dioxide nanocomposite was prepared by hydrothermal reaction of sol-gel derived titanium dioxide and organically modified cadmium telluride. The crystallinity of titanium dioxide in the nanocomposite was higher than that of pure titanium dioxide obtained by the reaction under the same temperature and pressure conditions, showing that cadmium telluride induced the crystallization of titanium dioxide. Diffuse reflectance spectrum of the nanocomposite showed the higher absorption efficiency in the UV-visible region due to band-gap excitation of titanium dioxide. The nanocomposite significantly showed the improvement of photocatalytic activity for 4-chlorophenol with UV light.

  17. Abnormal physics of group-II telluride system:valence contribution of d electrons

    Institute of Scientific and Technical Information of China (English)

    Duan He; Dong You-Zhong; Huang Yan; Chen Xiao-Shuang

    2011-01-01

    The physical trend of group-II tellurides is unexpected and contrary to the conventional wisdom. The present firstprinciples calculations give fundamental insights into the extent to which group-II telluride compounds present special properties upon mixing the d valence character.Our results provide explanations for the unexpected experimental observations based on the abnormal binding ordering of metal d electrons and their strong perturbation to the band edge states. The insights into the binary tellurides are useful for the study and control of the structural and chemical perturbation in their ternary alloys and heterostructures.

  18. Effect of metallic coatings on thermoelectric properties of lead telluride films

    Energy Technology Data Exchange (ETDEWEB)

    Ukhlinov, G.A.; Lakhno, I.G. (Moskovskij Inst. Ehlektronnoj Tekhniki (USSR))

    1984-05-01

    Effect of sprayed coatings of different metals on thermoelectric properties of lead telluride films was investigated. The basic films were prepared by the method of vacuum thermal evaporation of sample of stoichiometric lead telluride at 5x10/sup -4/ Pa residual pressure on mica (muscovite) sublayer at 330-350 deg C and approximately 10 nm/s deposition rate. It was established that fine coatings of copper, silver and gold modify sufficiently electric properties of lead telluride films. The effect is conditioned mainly by decoration and electric shunting of grain boundaries by metal island, which removes the contribution of grain boundaries to film electric conductivity.

  19. Megapixel mercury cadmium telluride focal plane arrays for infrared imaging out to 12 microns Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the fabrication of large format, long wave infrared (LWIR) mercury cadmium telluride (HgCdTe or MCT) detector arrays where the cutoff wavelength is...

  20. Optical properties of thermally evaporated cadmium telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, U.P.; Bhavsar, D.S.; Vaidya, R.U.; Bhavsar, G.P

    2003-05-26

    Polycrystalline CdTe films have been deposited onto glass substrates at 373 K by vacuum evaporation technique. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 200-2500 nm. The dependence of absorption coefficient, {alpha} on the photon energy have been determined. Analysis of the result showed that for CdTe films of different thicknesses, direct transition occurs with band gap energies in the range 1.45-1.52 eV. Refractive indices and extinction coefficients have been evaluated in the above spectral range. The XRD analysis confirmed that CdTe films are polycrystalline having hexagonal structure. The lattice parameters of thin films are almost matching with the JCPDS 82-0474 data for cadmium telluride.

  1. Mercury Cadmium Telluride Photoconductive Long Wave Infrared Linear Array Detectors

    Directory of Open Access Journals (Sweden)

    Risal Singh

    2003-07-01

    Full Text Available Mercury cadmium telluride (Hg1-x, CdxTe (MCT photoconductive long wave infrared linear arrays are still in demand due to several advantages. The linear array technology is well established, easier, economical and is quite relevant to thermal imaging even today. The scan thermal imaging systems based on this technology offer wider field of view coverage and capacity for higher resolution in the scan direction relative to staring systems that use expensive and yet to mature focal plane array detector technology. A critical review on photoconductive n-Hg1-x CdxTe linear array detector technology for the long wave infrared range has been presented. The emphasis lies on detector design and processing technology. The critical issues of diffusion and drift effects, Hi-Lo and heterostructure blocking contacts, surface passivation, and other related aspects have been considered from the detector design angle. The device processing technology aspects are of vital importance

  2. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; and James, R.B.

    2010-08-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  3. Electrochemical Studies of Lead Telluride Behavior in Acidic Nitrate Solutions

    Directory of Open Access Journals (Sweden)

    Rudnik E.

    2015-04-01

    Full Text Available Electrochemistry of lead telluride stationary electrode was studied in nitric acid solutions of pH 1.5-3.0. E-pH diagram for Pb-Te-H2O system was calculated. Results of cyclic voltammetry of Pb, Te and PbTe were discussed in correlation with thermodynamic predictions. Anodic dissolution of PbTe electrode at potential approx. -100÷50 mV (SCE resulted in tellurium formation, while above 300 mV TeO2 was mainly produced. The latter could dissolve to HTeO+2 under acidic electrolyte, but it was inhibited by increased pH of the bath.

  4. Tunable split-ring resonators using germanium telluride

    Science.gov (United States)

    Kodama, C. H.; Coutu, R. A.

    2016-06-01

    We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 °C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material's resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures.

  5. Study of oxide films on the surface of cadmium telluride

    International Nuclear Information System (INIS)

    Study of oxide films on surfaces of CdTe monocrystals is continued by methods of ellipsometry and by absorption in IR-spectral range. Index values of refruction of oxide films, produced by cadmium telluride oxidation in hydrogen peroxide solutions, in oxigen flow at 673 K and by anode oxidation, as a rule, differ essentially in dependence on method of production, that gives evidence of differences in these films composition. Oxide films, produced in oxygen flow, as opposed to films, produced by two other methods, have intensive absorption, characteristic for tellurite group. Film thickness, produced by oxidation in hydrogen peroxide and in oxygen flow, varies within rather wide limits with observance of externally similar conditions of production. By contrast to it, thickness of anode films is regulated reliably by anode potential

  6. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    Science.gov (United States)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  7. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    International Nuclear Information System (INIS)

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs

  8. Brief review of cadmium telluride-based photovoltaic technologies

    Science.gov (United States)

    Başol, Bülent M.; McCandless, Brian

    2014-01-01

    Cadmium telluride (CdTe) is the most commercially successful thin-film photovoltaic technology. Development of CdTe as a solar cell material dates back to the early 1980s when ˜10% efficient devices were demonstrated. Implementation of better quality glass, more transparent conductive oxides, introduction of a high-resistivity transparent film under the CdS junction-partner, higher deposition temperatures, and improved Cl-treatment, doping, and contacting approaches yielded >16% efficient cells in the early 2000s. Around the same time period, use of a photoresist plug monolithic integration process facilitated the demonstration of the first 11% efficient module. The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas and heavy metal emissions, small carbon footprint, and short energy payback times. Limited Te availability is a challenge for the growth of this technology unless Te utilization rates are greatly enhanced along with device efficiencies.

  9. Review of the field performance of one cadmium telluride module

    Energy Technology Data Exchange (ETDEWEB)

    Cueto, J.A. del [National Renewable Energy Lab., Golden, CO (United States)

    1998-12-01

    Performance data gathered in situ from a large-area cadmium telluride (CdTe) thin-film photovoltaic (PV) module that has been deployed outdoors since February 1995 are investigated. It appears that the module's performance has been stable over the last 2 years but it exhibits a semi-cyclical variation whereby the efficiency appears to peak between the autumnal equinox and winter solstice. Analyses are performed that dissect module current-voltage parameters by irradiance and examine their dependence on temperature. The temperature coefficient of the efficiency is quite small and negative from 80% of 1-sun intensity and upwards. Its meager value is the outcome of the sizes and opposite sings of the temperature coefficients of the open-circuit voltage and fill factor. Average module series resistance is quantified and shown to be a determinant in power loss of 11% at 1-sun intensity. It is demonstrated to constrain the fill factor at illumination intensities above 60% of 1-sun, which occurs in the same range of illumination intensities that the temperature coefficients of the fill factor exhibit positive values. Evidence is presented that points to some spectrally-induced variations in the efficiency. (Author)

  10. Thin tungsten telluride layer preparation by thermal annealing

    Science.gov (United States)

    Lu, Wei; Zhang, Yudao; Zhu, Zusong; Lai, Jiawei; Zhao, Chuan; Liu, Xuefeng; Liu, Jing; Sun, Dong

    2016-10-01

    We report a simple method to prepare a thin Tungsten Telluride (WTe2) flake with accurate thickness control, which allows preparing and studying this two dimensional material conveniently. First, the WTe2 flake, which is relatively thick due to its strong interlayer van der Waals forces, is obtained by a conventional mechanical exfoliation method. Then, the exfoliated flake is annealed at 600 °C under a constant Ar protecting flow. Raman and atomic force spectroscopy characterizations demonstrate that thermal annealing can effectively thin down the WTe2 flake and retain its original lattice structure, though its surface smoothness is slightly deteriorated. Additionally, systematical study indicates that the thinning process strongly depends on the initial thickness of the WTe2 flake before annealing: the thinning rate increases from 0.12 nm min-1 to 0.36 nm min-1 as the initial thickness increases from 10 nm to 45 nm, while the roughness of the final product also increases with the increase of its initial thickness. However, the method fails when it is applied to WTe2 flakes thicker than 100 nm, resulting in uneven or burnt surface, which is possibly caused by big cavities formed by a large amount of defects gathered at the top surface.

  11. Preliminary uranium enrichment analysis results using cadmium zinc telluride detectors

    International Nuclear Information System (INIS)

    Lawrence Livermore National Laboratory (LLNL) and EG ampersand G ORTEC have jointly developed a portable ambient-temperature detection system that can be used in a number of application scenarios. The detection system uses a planar cadmium zinc telluride (CZT) detector with custom-designed detector support electronics developed at LLNL and is based on the recently released MicroNOMAD multichannel analyzer (MCA) produced by ORTEC. Spectral analysis is performed using software developed at LLNL that was originally designed for use with high-purity germanium (HPGe) detector systems. In one application, the CZT detection system determines uranium enrichments ranging from less than 3% to over 75% to within accuracies of 20%. The analysis was performed using sample sizes of 200 g or larger and acquisition times of 30 min. The authors have demonstrated the capabilities of this system by analyzing the spectra gathered by the CZT detection system from uranium sources of several enrichments. These experiments demonstrate that current CZT detectors can, in some cases, approach performance criteria that were previously the exclusive domain of larger HPGe detector systems

  12. Thickness-induced structural phase transformation of layered gallium telluride.

    Science.gov (United States)

    Zhao, Q; Wang, T; Miao, Y; Ma, F; Xie, Y; Ma, X; Gu, Y; Li, J; He, J; Chen, B; Xi, S; Xu, L; Zhen, H; Yin, Z; Li, J; Ren, J; Jie, W

    2016-07-28

    The thickness-dependent electronic states and physical properties of two-dimensional materials suggest great potential applications in electronic and optoelectronic devices. However, the enhanced surface effect in ultra-thin materials might significantly influence the structural stability, as well as the device reliability. Here, we report a spontaneous phase transformation of gallium telluride (GaTe) that occurred when the bulk was exfoliated to a few layers. Transmission electron microscopy (TEM) results indicate a structural variation from a monoclinic to a hexagonal structure. Raman spectra suggest a critical thickness for the structural transformation. First-principle calculations and thermodynamic analysis show that the surface energy and the interlayer interaction compete to dominate structural stability in the thinning process. A two-stage transformation process from monoclinic (m) to tetragonal (T) and then from tetragonal to hexagonal (h) is proposed to understand the phase transformation. The results demonstrate the crucial role of interlayer interactions in the structural stability, which provides a phase engineering strategy for device applications.

  13. Using atomistic simulations to model cadmium telluride thin film growth

    Science.gov (United States)

    Yu, Miao; Kenny, Steven D.

    2016-03-01

    Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

  14. In-Plane Optical Anisotropy of Layered Gallium Telluride.

    Science.gov (United States)

    Huang, Shengxi; Tatsumi, Yuki; Ling, Xi; Guo, Huaihong; Wang, Ziqiang; Watson, Garrett; Puretzky, Alexander A; Geohegan, David B; Kong, Jing; Li, Ju; Yang, Teng; Saito, Riichiro; Dresselhaus, Mildred S

    2016-09-27

    Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C2h(3) space group. Investigating the in-plane optical anisotropy, including the electron-photon and electron-phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. These studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.

  15. Magnetic properties of Cr telluride-selenide alloys

    Energy Technology Data Exchange (ETDEWEB)

    Mankovsky, Sergey; Polesya, Svetlana; Ebert, Hubert [Dept. Chemie und Biochemie, Universitaet Muenchen, Butenandtstr. 5-13, D-81377 Muenchen (Germany); Huang, Zhong-Le; Bensch, Wolfgang [Institute for Anorganic Chemistry, Olshausenstr. 40, D-24098, Kiel (Germany)

    2007-07-01

    Results of a theoretical study of the magnetic properties of Cr telluride-selenide alloys having trigonal crystal structure are presented in comparison with experimental results. Both ground state and temperature-dependent magnetic properties of Cr{sub 1-{delta}}Te and Cr{sub x}(Te{sub {alpha}}Se{sub {beta}}){sub 2} (with ratio {alpha}:{beta}=7:1,6:2,5:3) have been investigated in a wide region of chromium content. For the alloys Cr{sub x}(Te{sub {alpha}}Se{sub {beta}}){sub 2} a transition to the state with antiferromagnetic order in a fully occupied sub-lattice and with no order in a partially occupied sub-lattice was obtained. For the alloys Li{sub x}Cr{sub 0.5}Ti{sub 0.75}Se{sub 2}, a non-monotonic dependence of structural and magnetic properties have been found upon increase of Li concentration x, that is in agreement with experimental results. The ground state properties have been studied on the basis of electronic structure calculations using the Korringa-Kohn-Rostoker (KKR) band structure method combined with the CPA alloy theory. Using Monte Carlo simulations we obtained the magnetic configuration at T=0 K and studied the magnetic properties at T>0 K as well. The required exchange coupling parameters were obtained from our ab-initio electronic structure calculations.

  16. High efficiency thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Britt, J.; Chen, G.; Ferekides, C.; Schultz, N.; Wang, C.; Wu, C. Q.

    1992-12-01

    Cadmium sulfide (CdS), grown from an aqueous solution, and zinc oxide (ZnO), cadmium zinc sulfide (Cd1-xZnxS), and zinc selenide (ZnSe), deposited by metalorganic chemical vapor deposition (MOCVD), have been used as the window for thin film cadmium telluride (CdTe) solar cells. Thin film solar cells were prepared by the successive deposition of the window and p-CdTe (by MOCVD and close-spaced sublimation, CSS) on SnO2:F/glass substrates. CdS/CdTe(CSS) solar cells show considerably better characteristics than CdS/CdTe(MOCVD) solar cells because of the better microstructure of CSS CdTe films. Total area conversion efficiency of 14.6%, verified by the National Renewable Energy Laboratory, has been achieved for solar cells of about 1 cm2 area. Solar cell prepared by using ZnO, ZnSe, or Cd1-xZnxS as window have significantly lower photovoltage than CdS/CdTe solar cells.

  17. X-ray computed tomography system utilizing a cadmium telluride detector

    OpenAIRE

    佐藤, 英一; 野宮, 聖一郎; 人見, 啓太朗; 尾鍋, 秀明; 河合, 敏明; 小川, 彰; 佐藤, 成大; 市丸, 俊夫; サトウ, エイイチ; ノミヤ, セイイチロウ; ヒトミ, ケイタロウ; オナベ, ヒデアキ; カワイ, トシアキ; オガワ, アキラ; サトウ, シゲヒロ

    2007-01-01

    A simple x-ray computed tomography(CT) system utilizing a cadmium telluride detector is described. The CT system is of the first generation type and consists of an x-ray generator, a turn table, a translation table, a motor drive unit, a cadmium telluride detector, an interface unit for the detector, and a personal computer(PC). Tomography was performed by the repetition of the translation and rotation of an object. The maximum values of the tube voltage and the tube current were 110kV and 2....

  18. Current transport mechanisms in mercury cadmium telluride diode

    Science.gov (United States)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  19. Directional Solidification of Mercury Cadmium Telluride in Microgravity

    Science.gov (United States)

    Lechoczhy, Sandor L.; Gillies, Donald C.; Szofran, Frank R.; Watring, Dale A.

    1998-01-01

    Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

  20. Telluride films and waveguides for IR integrated optics

    Energy Technology Data Exchange (ETDEWEB)

    Barthelemy, Eleonore; Vigreux, Caroline; Pradel, Annie [Institut Charles Gerhardt Montpellier, UMR CNRS 5253, Universite Montpellier II, CC1503, 34095 Montpellier Cedex 5 (France); Parent, Gilles [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, Universite de Nancy-Lorraine, BP239, 54506 Vandoeuvre Les Nancy Cedex (France); Barillot, Marc [Thales Alenia Space, 100 Bld. du midi, BP99, 06156 Cannes La Bocca Cedex (France)

    2011-09-15

    The fabrication of micro-components for far infrared applications such as spatial interferometry requires the realization of single-mode channel waveguides being able to work in the infrared region. One of the key issues in case of channel waveguides is the selection of materials for the core layer. Amorphous telluride films are particularly attractive for their transparency in a large spectral domain in the infrared region. A second key issue is the selection of an appropriate method for film deposition. Indeed, waveguides for far infrared applications are characterized by a thick core layer (10-15 {mu}m, typically). The challenge is thus to select a deposition method which ensures the deposition of thick films of optical quality. In this paper, it is shown that thermal co-evaporation meets this challenge. In particular, it allows varying the composition of the films very easily and thus adjusting their optical properties (refractive index, optical band gap). The example of thermally co-evaporated Te-Ge films is given. Films with typical thickness of 7-15 {mu}m were elaborated. Their morphological, structural, thermal and optical properties were measured. A particular attention was paid to the checking of the film homogeneity. The realized waveguiding structures and their optical testing are then described. In particular, the first transmission measurements at 10.6 {mu}m are presented. In conclusion, the feasibility of micro-components based on the stacking and etching of chalcogenide films is demonstrated, opening the door to applications related to detection in the mid- and thermal infrared spectral domains (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  2. Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives

    International Nuclear Information System (INIS)

    Photovoltaics (PV) is a growing business worldwide, with new technologies evolving towards potentially large-volume production. PV use produces no emissions, thus offsetting many potential environmental problems. However, the new PV technologies also bring unfamiliar environment, safety, and health (ES and H) challenges that require innovative solutions. This is a summary of the issues, solutions, and perspectives associated with the use of cadmium in one of the new and important PV technologies: thin-film, cadmium telluride (CdTe) PV, which is being developed and commercialized by several companies including Solar Cells Inc. (Toledo, Ohio), BP Solar (Fairfield, California), and Matsushita (Japan). The principal ES and H issue for thin-film cadmium telluride PV is the potential introduction of cadmium--a toxic heavy metal--into the air or water. The amount of cadmium in thin-film PV, however, is quite small--one nickel cadmium flashlight battery has about as much cadmium (7 g) as a square meter of PV module using current technology--and a typical cordless power tool will have 5--10 batteries. CdTe modules are also very well sealed, limiting the chance of release. Nonetheless, minimizing the amount of cadmium in cadmium telluride modules and preventing the introduction of that cadmium into the environment is a top priority for National Renewable Energy Laboratory researchers and cadmium telluride PV manufacturers

  3. Stable, high efficiency thin film solar cells produced by electrodeposition of cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Turner, A.K.; Woodcock, J.M.; Ozsan, M.E.; Summers, J.G.; Barker, J.; Binns, S.; Buchanan, K.; Chai, C.; Dennison, S.; Hart, R.; Johnson, D.; Marshall, R.; Oktik, S.; Patterson, M.; Perks, R.; Roberts, S.; Sadeghi, M.; Sherborne, J.; Szubert, J.; Webster, S. (BP Solar, Solar House, Leatherhead (United Kingdom))

    1991-12-01

    The highest known efficiency of 9.5% for a 300x300 mm series interconnected cadmium telluride solar cell is reported. In addition, efficiencies of up to 13% have been measured for small cells based on electrodeposited CdTe. The stability of modules in outdoor tests is discussed and an outline is given of the device fabrication procedure. (orig.).

  4. Structural Engineering of Vacancy Defected Bismuth Tellurides for Thermo-electric Applications

    Science.gov (United States)

    Termentzidis, K.; Pokropivny, A.; Xiong, S.-Y.; Chumakov, Y.; Cortona, P.; Volz, S.

    2012-10-01

    Molecular Dynamics and ab-initio simulations are used to find the most stable stoichiometries of Bismuth Tellurides with vacancy defects. The interest is to decrease the thermal conductivity of these compounds a key point to achieve high figure of merits. A reduction of 70% of the thermal conductivity is observed with Te vacancies of only 5%.

  5. Structural Engineering of Vacancy Defected Bismuth Tellurides for Thermo-electric Applications

    Directory of Open Access Journals (Sweden)

    Chumakov Y.

    2012-10-01

    Full Text Available Molecular Dynamics and ab-initio simulations are used to find the most stable stoichiometries of Bismuth Tellurides with vacancy defects. The interest is to decrease the thermal conductivity of these compounds a key point to achieve high figure of merits. A reduction of 70% of the thermal conductivity is observed with Te vacancies of only 5%.

  6. Electrodeposition of bismuth telluride thermoelectric films from a nonaqueous electrolyte using ethylene glycol

    NARCIS (Netherlands)

    Nguyen, H.P.; Wu, M.; Su, J.; Vullers, R.J.M.; Vereecken, P.M.; Fransaer, J.

    2012-01-01

    Ethylene glycol was studied as an electrolyte for the electrodeposition of thermoelectric bismuth telluride films by cyclic voltammetry, rotating ring disk electrode and electrochemical quartz crystal microbalance (EQCM). The reduction of both Bi3+ and Te4+ ions proceeds in one step without the form

  7. Ab initio lattice dynamics and thermochemistry of layered bismuth telluride (Bi2Te3)

    Science.gov (United States)

    Zurhelle, Alexander F.; Deringer, Volker L.; Stoffel, Ralf P.; Dronskowski, Richard

    2016-03-01

    We present density-functional theory calculations of the lattice dynamics of bismuth telluride, yielding force constants, mean-square displacements and partial densities of phonon states which corroborate and complement previous nuclear inelastic scattering experiments. From these data, we derive an element- and energy-resolved view of the vibrational anharmonicity, quantified by the macroscopic Grüneisen parameter γ which results in 1.56. Finally, we calculate thermochemical properties in the quasiharmonic approximation, especially the heat capacity at constant pressure and the enthalpy of formation for bismuth telluride; the latter arrives at ▵H f (Bi2Te3)  =  -102 kJ mol-1 at 298 K.

  8. Synthesis of copper telluride nanowires using template-based electrodeposition method as chemical sensor

    Indian Academy of Sciences (India)

    Sandeep Arya; Saleem Khan; Suresh Kumar; Rajnikant Verma; Parveen Lehana

    2013-08-01

    Copper telluride (CuTe) nanowires were synthesized electrochemically from aqueous acidic solution of copper (II) sulphate (CuSO4.5H2O) and tellurium oxide (TeO2) on a copper substrate by template-assisted electrodeposition method. The electrodeposition was conducted at 30 °C and the length of nanowires was controlled by adjusting deposition time. Structural characteristics were examined using X-ray diffraction and scanning electron microscope which confirm the formation of CuTe nanowires. Investigation for chemical sensing was carried out using air and chloroform, acetone, ethanol, glycerol, distilled water as liquids having dielectric constants 1, 4.81, 8.93, 21, 24.55, 42.5 and 80.1, respectively. The results unequivocally prove that copper telluride nanowires can be fabricated as chemical sensors with enhanced sensitivity and reliability.

  9. Kelvin probe studies of cesium telluride photocathode for the AWA photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Velazquez, D.; Wisniewski, E. E.; Yusof, Z.; Harkay, K.; Spentzouris, L.; Terry, J. [Physics Department at Illinois Institute of Technology, Chicago, IL 60616 and High Energy Physics Division at Argonne National Laboratory, Lemont, IL 60439 (United States); High Energy Physics Division at Argonne National Laboratory, Lemont, IL 60439 (United States); Accelerator Science Division at Argonne National Laboratory, Lemont, IL 60439 (United States); Physics Department at Illinois Institute of Technology, Chicago, IL 60616 (United States)

    2012-12-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (> 1%), is robust in a photoinjector, and long lifetime. This photocathode is fabricated in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch ({approx}50 nC) in a long bunch train. We present some results from a study of the work function of cesium telluride photocathode using the Kelvin Probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV light exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating.

  10. GEOLOGY OF THE FLORENCIA GOLD – TELLURIDE DEPOSIT (CAMAGÜEY, CUBA AND SOME METALLURGICAL CONSIDERATIONS

    Directory of Open Access Journals (Sweden)

    López K Jesús M.

    2006-12-01

    Full Text Available This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after beneficiation and flotation of samples from these sectors.
    It is shown that gold deposits of the Cretaceous Volcanic Arc of Cuba largely consist of native gold, telluride and pyrite, where arsenopyrite is almost absent. Traces of lead, zinc and cadmium are present in the periphery of the main ore zones.

  11. Characterization of large cadmium zinc telluride crystals grown by traveling heater method

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Iniewski, K.;

    2008-01-01

    The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these c......The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions...

  12. Optical property of amorphous semiconductor mercury cadmium telluride from first-principles study

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The structural and optical properties of amorphous semiconductor mercury cadmium telluride (a-MCT) are obtained by the first principles calculations. The total pair distribution functions and the density of states show that the a-MCT has the semiconductor characteristic. The calculated results of dielectric function show that E2 peak of the imaginary of dielectric function for the crystal mercury cadmium telluride abruptly disappears in the amorphous case due to the long-range disorders. And the imaginary of dielectric function of a-MCT shows a large broad peak, which is in agreement with the available results of other amorphous semiconductors. From the linear extrapolation of the curve ωε 2(ω)1/2 versus ω, it can be obtained that the optical energy gap of amorphous semiconductor Hg0.5Cd0.5Te is 0.51±0.05 eV.

  13. Optical property of amorphous semiconductor mercury cadmium telluride from first-principles study

    Institute of Scientific and Technical Information of China (English)

    WANG Liang; CHEN XiaoShuang; LU Wei; HUANG Yan; WANG XiaoFang; ZHAO JiJun

    2009-01-01

    The structural and optical properties of amorphous semiconductor mercury cadmium telluride(a-MCT) are obtained by the first principles calculations. The total pair distribution functions and the density of states show that the a-MCT has the semiconductor characteristic. The calculated results of dielectric function show that E2 peak of the imaginary of dielectric function for the crystal mercury cadmium telluride abruptly disappears in the amorphous case due to the long-range disorders. And the imaginary of dielectric function of a-MCT shows a large broad peak, which is in agreement with the available results of other amorphous semiconductors. From the linear extrapolation of the curve (n)ωε2(ω)1/2 versus (n)ω,it can be obtained that the optical energy gap of amorphous semiconductor Hg0.5Cd0.5Te is 0.51±0.05 eV.

  14. Mitochondrial Toxicity of Cadmium Telluride Quantum Dot Nanoparticles in Mammalian Hepatocytes

    OpenAIRE

    Nguyen, Kathy C; Rippstein, Peter; Tayabali, Azam F.; Willmore, William G.

    2015-01-01

    There are an increasing number of studies indicating that mitochondria are relevant targets in nanomaterial-induced toxicity. However, the underlying mechanisms by which nanoparticles (NPs) interact with these organelles and affect their functions are unknown. The aim of this study was to investigate the effects of cadmium telluride quantum dot (CdTe-QD) NPs on mitochondria in human hepatocellular carcinoma HepG2 cells. CdTe-QD treatment resulted in the enlargement of mitochondria as examined...

  15. Aqueous-solution route to zinc telluride films for application to CO₂ reduction.

    Science.gov (United States)

    Jang, Ji-Wook; Cho, Seungho; Magesh, Ganesan; Jang, Youn Jeong; Kim, Jae Young; Kim, Won Yong; Seo, Jeong Kon; Kim, Sungjee; Lee, Kun-Hong; Lee, Jae Sung

    2014-06-01

    As a photocathode for CO2 reduction, zinc-blende zinc telluride (ZnTe) was directly formed on a Zn/ZnO nanowire substrate by a simple dissolution-recrystallization mechanism without any surfactant. With the most negative conduction-band edge among p-type semiconductors, this new photocatalyst showed efficient and stable CO formation in photoelectrochemical CO2 reduction at -0.2--0.7 V versus RHE without a sacrificial reagent.

  16. The first trialkylphosphane telluride complexes of Ag(I): molecular, ionic and supramolecular structural alternatives.

    Science.gov (United States)

    Daniliuc, Constantin; Druckenbrodt, Christian; Hrib, Cristian G; Ruthe, Frank; Blaschette, Armand; Jones, Peter G; du Mont, Wolf-W

    2007-05-28

    The structures of the first phosphane telluride complexes of silver(I), obtained from i-Pr3PTe (1) with AgNMs2 [Ms = SO2CH3] and with AgSbF6, reveal the superior coordinating ability of 1, particularly as a bridging ligand, compared with related i-Pr3PS and i-Pr3PSe ligands. PMID:17713078

  17. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

    Science.gov (United States)

    Patterson, James D.; Li, Wei-Gang

    1995-01-01

    The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

  18. Formation of Semimetallic Cobalt Telluride Nanotube Film via Anion Exchange Tellurization Strategy in Aqueous Solution for Electrocatalytic Applications.

    Science.gov (United States)

    Patil, Supriya A; Kim, Eun-Kyung; Shrestha, Nabeen K; Chang, Jinho; Lee, Joong Kee; Han, Sung-Hwan

    2015-11-25

    Metal telluride nanostructures have demonstrated several potential applications particularly in harvesting and storing green energy. Metal tellurides are synthesized by tellurization process performed basically at high temperature in reducing gas atmosphere, which makes the process expensive and complicated. The development of a facile and economical process for desirable metal telluride nanostructures without complicated manipulation is still a challenge. In an effort to develop an alternative strategy of tellurization, herein we report a thin film formation of self-standing cobalt telluride nanotubes on various conducting and nonconducting substrates using a simple binder-free synthetic strategy based on anion exchange transformation from a thin film of cobalt hydroxycarbonate nanostructures in aqueous solution at room temperature. The nanostructured films before and after ion exchange transformation reaction are characterized using field emission scanning electron microscope, energy dispersive X-ray analyzer, X-ray photoelectron spectroscopy, thin film X-ray diffraction technique, high resolution transmission electron microscope, and selected area electron diffraction analysis technique. After the ion exchange transformation of nanostructures, the film shows conversion from insulator to highly electrical conductive semimetallic characteristic. When used as a counter electrode in I3(-)/I(-) redox electrolyte based dye-sensitized solar cells, the telluride film exhibits an electrocatalytic reduction activity for I3(-) with a demonstration of solar-light to electrical power conversion efficiency of 8.10%, which is highly competitive to the efficiency of 8.20% exhibited by a benchmarked Pt-film counter electrode. On the other hand, the telluride film electrode also demonstrates electrocatalytic activity for oxygen evolution reaction from oxidation of water.

  19. Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

    Science.gov (United States)

    Patterson, James D.

    1996-01-01

    We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.

  20. Feasibility of preparing patterned molybdenum coatings on bismuth telluride thermoelectric modules.

    Energy Technology Data Exchange (ETDEWEB)

    Sarobol, Pylin; Hall, Aaron Christopher; Miller, Stephen Samuel; Knight, Marlene E.; LePage, William S.; Sobczak, Catherine Elizabeth.; Wesolowski, Daniel Edward

    2013-09-01

    Molybdenum electrical interconnects for thermoelectric modules were produced by air plasma spraying a 30%CE%BCm size molybdenum powder through a laser-cut Kapton tape mask. Initial feasibility demonstrations showed that the molybdenum coating exhibited excellent feature and spacing retention (~170%CE%BCm), adhered to bismuth-telluride, and exhibited electrical conductivity appropriate for use as a thermoelectric module interconnect. A design of experiments approach was used to optimize air plasma spray process conditions to produce a molybdenum coating with low electrical resistivity. Finally, a molybdenum coating was successfully produced on a fullscale thermoelectric module. After the addition of a final titanium/gold layer deposited on top of the molybdenum coating, the full scale module exhibited an electrical resistivity of 128%CE%A9, approaching the theoretical resistivity value for the 6mm module leg of 112%CE%A9. Importantly, air plasma sprayed molybdenum did not show significant chemical reaction with bismuth-telluride substrate at the coating/substrate interface. The molybdenum coating microstructure consisted of lamellar splats containing columnar grains. Air plasma sprayed molybdenum embedded deeply (several microns) into the bismuth-telluride substrate, leading to good adhesion between the coating and the substrate. Clusters of round pores (and cracks radiating from the pores) were found immediately beneath the molybdenum coating. These pores are believed to result from tellurium vaporization during the spray process where the molten molybdenum droplets (2623%C2%B0C) transferred their heat of solidification to the substrate at the moment of impact. Substrate cooling during the molybdenum deposition process was recommended to mitigate tellurium vaporization in future studies.

  1. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while

  2. Spatial mapping of cadmium zinc telluride materials properties and electrical response to improve device yield and performance

    CERN Document Server

    Van Scyoc, J M; Yoon, H; Gilbert, T S; Hilton, N R; Lund, J C; James, R B

    1999-01-01

    Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.

  3. Specific features of the photoconductivity of semi-insulating cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  4. Polarity and structure peculiarities of trialkylphosphine oxides, sulfides, selenides and tellurides

    International Nuclear Information System (INIS)

    Using the quantum-chemical calculations structural characteristics of trialkylphosphine oxides, sulfates, selenides and tellurides (Alk3P=X; X O, S, Se, Te) are obtained, which are in good agreement with literature X-ray structural analysis and gas-phase electron diffraction data. The P=X bonds polarity is determined in the framework of vector-additive scheme on the base of experimental data on components dipole moments and using different base series of molecules geometry parameters. It is shown that increasing of bond moment P=X in the X = O, S, Se, Te series takes place through dipole length increasing

  5. Soft x-ray magnetic circular dichroism study of Cr tellurides

    OpenAIRE

    Yaji, Koichiro; Kimura, Akio; Koyama, Michie; Hirai, Chiyuki; Sato, Hitoshi; Shimada, Kenya; Tanaka, Arata; Taniguchi, Masaki

    2005-01-01

    Ferromagnetic chromium tellurides Cr5 Te6 (δ=0.17) and Cr2 Te3 (δ=0.33) have been investigated by Cr 2p x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD). The observed XMCD spectra have been analyzed by means of a configuration-interaction cluster model calculation. From calculated results, we suggest that the doped holes created by the Cr deficiency exist mainly in the Te 5p orbital of Cr1-δ Te.

  6. Thermoelectric properties and micro-structure characteristics of annealed N-type bismuth telluride thin film

    International Nuclear Information System (INIS)

    N-type bismuth telluride (Bi2Te3) thermoelectric thin films were deposited by co-sputtering simple substance Te and Bi targets. The deposited films were annealed under various temperatures. The composition ratio, micro-structure and thermoelectric properties of the prepared films were systematically investigated by energy dispersive spectrometer, X-ray diffraction, four-probe method and Seebeck coefficient measurement system. When the annealing temperature is 400 °C, the stoichiometric N-type Bi2Te3 film is achieved, which has a maximum thermoelectric power factor of 0.821 × 10−3 W m−1 K−2. Furthermore, the dependence of Seebeck coefficient, electrical conductivity and power factor of the stoichiometric N-type Bi2Te3 film annealed at film 400 °C on the applied temperature ranging from 25 °C to 315 °C was investigated. The results show that a highest power factor of 3.288 × 10−3 W m−1 K−2 is obtained at the applied temperature of 275 °C. The structural and thermoelectric properties of the deposited bismuth telluride thin films are greatly improved by annealing and the Seebeck coefficient, electrical conductivity and power factor increase with the applied temperature rising, which are helpful and could be guidance for preparing the high-performance thin film thermoelectric materials for thermoelectric application.

  7. Facile production of thermoelectric bismuth telluride thick films in the presence of polyvinyl alcohol.

    Science.gov (United States)

    Lei, C; Burton, M R; Nandhakumar, I S

    2016-06-01

    Bismuth telluride is currently the best performing thermoelectric material for room temperature operations in commercial thermoelectric devices. We report the reproducible and facile production of 600 micron thick bismuth telluride (Bi2Te3) layers by low cost and room temperature pulsed and potentiostatic electrodeposition from a solution containing bismuth and tellurium dioxide in 2 M nitric acid onto nickel in the presence of polyvinyl alcohol (PVA). This was added to the electrolyte to promote thick layer formation and its effect on the structure, morphology and composition of the electrodeposits was investigated by SEM and EDX. Well adherent, uniform, compact and stoichiometric n-type Bi2Te3 films with a high Seebeck coefficient of up to -200 μV K(-1) and a high electrical conductivity of up to 400 S cm(-1) resulting in a power factor of 1.6 × 10(-3) W m(-1) K(-2) at film growth rates of 100 μm h(-1) for potentiostatic electrodeposition were obtained. The films also exhibited a well defined hexagonal structure as determined by XRD.

  8. Telluride buried channel waveguides operating from 6 to 20 μm for photonic applications

    Science.gov (United States)

    Vigreux, C.; Escalier, R.; Pradel, A.; Bastard, L.; Broquin, J.-E.; Zhang, X.; Billeton, T.; Parent, G.; Barillot, M.; Kirschner, V.

    2015-11-01

    One of the technological challenges of direct observation of extra-solar planets by nulling interferometry is the development of a modal filter operating from 6 to 20 μm. In the present paper a candidate technology for the fabrication of such modal filters is presented: Integrated Optics. A solution based on all-telluride buried channel waveguides is considered. In the proposed waveguides, vertical guiding of light is achieved by a 15 μm-thick Te83Ge17 core film deposited onto a lower-index Te75Ge15Ga10 substrate, and covered by a 15 μm-thick Te76Ge24 superstrate. Horizontal guiding of light is obtained by modifying the geometry of the core layer by ion beam etching. As this stage, all-telluride buried channel waveguide prototypes demonstrate light guiding and transmission from 2 to 20 μm. The validity of the technology and the good quality of the fabrication process, in particular the input and output facets surface finish are thus confirmed. These results consolidate the potential of Te-based integrated optics components for nulling interferometry.

  9. A density-functional study on the electronic and vibrational properties of layered antimony telluride

    Science.gov (United States)

    Stoffel, Ralf P.; Deringer, Volker L.; Simon, Ronnie E.; Hermann, Raphaël P.; Dronskowski, Richard

    2015-03-01

    We present a comprehensive survey of electronic and lattice-dynamical properties of crystalline antimony telluride (Sb2Te3). In a first step, the electronic structure and chemical bonding have been investigated, followed by calculations of the atomic force constants, phonon dispersion relationships and densities of states. Then, (macroscopic) physical properties of Sb2Te3 have been computed, namely, the atomic thermal displacement parameters, the Grüneisen parameter γ, the volume expansion of the lattice, and finally the bulk modulus B. We compare theoretical results from three popular and economic density-functional theory (DFT) approaches: the local density approximation (LDA), the generalized gradient approximation (GGA), and a posteriori dispersion corrections to the latter. Despite its simplicity, the LDA shows excellent performance for all properties investigated—including the Grüneisen parameter, which only the LDA is able to recover with confidence. In the absence of computationally more demanding hybrid DFT methods, the LDA seems to be a good choice for further lattice dynamical studies of Sb2Te3 and related layered telluride materials.

  10. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  11. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  12. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 1, April 9-July 8, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K.

    1979-08-01

    Preparation and properties of cadmium telluride thin films for use in solar cells are studied. CdTe sputter deposition, crystal doping, and carrier typing are discussed. Future experimental plans are described. (WHK)

  13. Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy(ECALE)

    Institute of Scientific and Technical Information of China (English)

    ZHU Wen; YANG Junyou; GAO Xianhui; HOU Jie; BAO Siqian; FAN Xian

    2007-01-01

    Thin-layer electrochemical studies of the underpotential deposition(UPD)of Bi and Te on cold rolled silver substrate have been performed.The voltammetric analysis of underpotential shift demonstrates that the initial Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fitted UPD dynamics mechanism.A thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system.X-ray diffraction indicated the deposits of Bi2Te3.Energy Dispersive X-ray Detector quantitative analysis gave a 2:3 stoichiornetric ratio of Bi to Te,which was consistent with X-ray Diffraction results.Electron probe microanalysis of the deposits showed a network structure that results from the surface defects of the cold rolled Ag substrate and the lattice mismatch between substrate and deposit.

  14. Study of transport properties co - evaporated lead telluride (PbTe) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, U.P.; Bhavsar, G.P. [Thin film laboratory, Physics Department Pratap College, Amalner (India); Pawar, P.H. [Department of Electronics, Jai-Hind College, Dhule (India)

    2002-07-01

    Thin films of lead telluride (PbTe) of thicknesses ranging from 1000 A to 2500 A have been prepared by co-evaporation (three temperature) technique, onto precleaned amorphous glass substrates at various temperatures. The deposited samples were annealed and annealed samples were used for characterization. Resistivity of these samples was measured by four-probe technique as a function of thickness and temperature. Activation energy for charge transport have been evaluated and found in the range of 0.09 to 0.106 eV. Thermoelectric power has been measured and found to be positive indicating that the samples are p-type semiconducting material. Mobility variation with temperature has been estimated (evaluated) and correlated with scattering mechanism in the entire range of temperature studied. The X-ray diffraction analysis confirmed that films are polycrystalline having cubic structure cell and lattice parameters are reported. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  15. The use of cadmium telluride detectors for the qualitative analysis of diagnostic x-ray spectra.

    Science.gov (United States)

    Di Castro, E; Pani, R; Pellegrini, R; Bacci, C

    1984-09-01

    A method is introduced for the evaluation of x-ray spectra from x-ray machines operating in the range 50-100 kVp using a cadmium telluride (CdTe) detector with low detection efficiency. The pulse height distribution obtained with this kind of detector does not represent the true photon spectra owing to the presence of K-escape, Compton scattering, etc.; these effects were evaluated using a Monte Carlo method. A stripping procedure is described for implementation on a Univac 1100/82 computer. The validity of our method was finally tested by comparison with experimental results obtained with a Ge detector and with data from the literature; the results are in good agreement with published data. PMID:6483976

  16. Ion Beam Induced Charge Collection (IBICC) Studies of Cadmium Zinc Telluride (CZT) Radiation Detectors

    International Nuclear Information System (INIS)

    Cadmium Zinc Telluride is an emerging material for room temperature radiation detectors. In order to optimize the performance of these detectors, it is important to determine how the electronic properties of CZT are related to the presence of impurities and defects that are introduced during the crystal growth and detector fabrication. At the Sandia microbeam facility IBICC and Time Resolved IBICC (TRIBICC) were used to image electronic properties of various CZT detectors. Two-dimensional areal maps of charge collection efficiency were deduced from the measurements. In order to determine radiation damage to the detectors, we measured the deterioration of the IBICC signal as the function of dose. A model to explain quantitatively the pattern observed in the charge collection efficiency maps of the damaged detectors has been developed and will be discussed in the paper

  17. Electronic properties of chlorine doped cadmium telluride used as high energy photoconductive detector

    International Nuclear Information System (INIS)

    A new high energy X-ray chlorine doped Cadmium Telluride (CdTe:Cl) photoconductor is described. We discuss different deposition techniques (Sputtering, Evaporation, Electroless) to realize ohmic contacts which have low leakage current and which allow high applied electric field. The temperature dependence of the dark current give an activation energy of 0.6 eV for standard CdTe:Cl. The transient response of photoconductors under high X-ray energy beams has been characterized using three different pulse duration 150 ps, 30 ns and 4 μs. Sensitivity and speed of response are studied as a function of neutron pre-irradiated doses (0, 1014, 1015, 1016 n/cm2): neutron irradiations reduce the carrier lifetime at the expense of a lower sensitivity

  18. Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.H.; Gul, R.; and James, R.B.

    2010-10-26

    The behavior of the internal electric-field of nuclear-radiation detectors substantially affects the detector's performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of detector, other than the portion near the cathode. Such a space-charge region originates from serious hole-trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5 C to 35 C, its width expanded from about 1/6 to 1/2 of the total depth of the detector.

  19. An optically-interrogated microwave-Poynting-vector sensor using cadmium manganese telluride.

    Science.gov (United States)

    Chen, Chia-Chu; Whitaker, John F

    2010-06-01

    A single cadmium-manganese-telluride crystal that exhibits both the Pockels and Faraday effects is used to produce a Poynting-vector sensor for signals in the microwave regime. This multi-birefringent crystal can independently measure either electric or magnetic fields through control of the polarization of the optical probe beam. After obtaining all the relevant electric and magnetic field components, a map of the Poynting vector along a 50-Omega microstrip was experimentally determined without the need for any further transformational calculations. The results demonstrate that this sensor can be used for near-field mapping of the Poynting vector. Utilizing both amplitude and phase information from the fields in the microwave signal, it was confirmed for the case of an open-terminated microstrip that no energy flowed to the load, while for a microstrip with a matched termination, the energy flowed consistently along the transmission line. PMID:20588348

  20. Cadmium telluride quantum dots as pH-sensitive probes for tiopronin determination

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yunqing; Ye Chao; Zhu Zhenghui [Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing 210009 (China); Department of Analytical Chemistry, China Pharmaceutical University, Nanjing 210009 (China); Hu Yuzhu [Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing 210009 (China) and Department of Analytical Chemistry, China Pharmaceutical University, Nanjing 210009 (China)], E-mail: njhuyuzu@126.com

    2008-03-03

    The pH-sensitive cadmium telluride (CdTe) quantum dots (QDs) were used as proton probes for tiopronin determination. Based on the fluorescence quenching of CdTe QDs caused by tiopronin, a simple, rapid and specific quantitative method was proposed. Under the optimal conditions, the calibration plot of ln(F{sub 0}/F) with concentration of tiopronin was linear in the range of 0.15-20 {mu}g mL{sup -1}(0.92-122.5 {mu}mol L{sup -1}) with correlation coefficient of 0.998. The limit of detection (LOD) (3{sigma}/k) was 0.15 {mu}g mL{sup -1}(0.92 {mu}mol mL{sup -1}). The content of tiopronin in pharmaceutical tablet was determined by the proposed method and the result agreed with that obtained from the oxidation-reduction titration method and the claimed value.

  1. Cadmium telluride quantum dots as pH-sensitive probes for tiopronin determination

    International Nuclear Information System (INIS)

    The pH-sensitive cadmium telluride (CdTe) quantum dots (QDs) were used as proton probes for tiopronin determination. Based on the fluorescence quenching of CdTe QDs caused by tiopronin, a simple, rapid and specific quantitative method was proposed. Under the optimal conditions, the calibration plot of ln(F0/F) with concentration of tiopronin was linear in the range of 0.15-20 μg mL-1(0.92-122.5 μmol L-1) with correlation coefficient of 0.998. The limit of detection (LOD) (3σ/k) was 0.15 μg mL-1(0.92 μmol mL-1). The content of tiopronin in pharmaceutical tablet was determined by the proposed method and the result agreed with that obtained from the oxidation-reduction titration method and the claimed value

  2. Evaluation of DAST and zinc telluride nonlinear crystals for efficient terahertz generation

    International Nuclear Information System (INIS)

    Terahertz (THz) signal is generated from 4-N, N-dimethylamino-4’-N’-methyl-stilbazolium tosylate (i.e. DAST Crystal) and Zinc telluride (ZnTe) nonlinear crystals by employing 140 fs laser pulses at 800 nm with 80 MHz repetition rate. The semi insulating gallium arsenide photoconductive stripline antennas (gap =5 µm, length = 20 µm) is used as a Terahertz detector. The detected temporal profile of Terahertz radiation generated from DAST crystal is high as compared to ZnTe crystal in terms of amplitude. THz effective bandwidths of these crystals are extended up to 1.1 THz range. The potential of THz generation of DAST and ZnTe crystals are evaluated with respect to incident laser power

  3. Synthesis of the titanium phosphide telluride Ti 2PTe 2: A thermochemical approach

    Science.gov (United States)

    Philipp, Frauke; Schmidt, Peer; Milke, Edgar; Binnewies, Michael; Hoffmann, Stefan

    2008-04-01

    The phosphide telluride Ti 2PTe 2 can be synthesised from the elements or from oxides in a thermite type reaction. Both ways have been optimised by consideration of the thermodynamic behaviour of the compound. Hence, the investigation of phase equilibria in the ternary system Ti/P/Te and of the thermal decomposition of Ti 2PTe 2 was necessary. This investigation was performed by using different experimental approaches as total pressure measurements, thermal analysis and mass spectrometry. The results were supported and further analysed by thermodynamic modelling of the ternary system. It was shown that Ti 2PTe 2(s) decomposes to Ti 2P (s) and Te 2(g) in six consecutive steps. The growth of single crystals of Ti 2PTe 2 is thermodynamically described as a chemical vapour transport with TiCl 4(g) acting as the transport agent.

  4. Simple routes to synthesis and characterization of nanosized tin telluride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Salavati-Niasari, Masoud, E-mail: salavati@kashanu.ac.ir [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box. 87317-51167 (Iran, Islamic Republic of); Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, Kashan, P.O. Box. 87317-51167 (Iran, Islamic Republic of); Bazarganipour, Mehdi [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, Kashan, P.O. Box. 87317-51167 (Iran, Islamic Republic of); Davar, Fatemeh [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box. 87317-51167 (Iran, Islamic Republic of); Fazl, Alireza Amini [Institute for Colorants, Paint and Coatings (ICPC), Tehran, P.O. Box. 16765/654 (Iran, Islamic Republic of)

    2010-11-15

    Nanosized tin telluride compounds were prepared by chemical reduction process and hydrothermal methods. The nanosized SnTe compounds were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The SnTe nanoalloy prepared by chemical reduction process presented quasi-spherical morphology with aggregation. The sizes of particle were 40-50 nm. The powder prepared by hydrothermal process was nearly nanospheres, and the particle sizes were 30-40 nm with narrow distribution. The effect of capping agent, reductant sort, and reaction temperature on the morphology, the particle sizes and the phase of SnTe alloys have been investigated. Experimental results indicated that N{sub 2}H{sub 4}.H{sub 2}O plays a crucial role in the formation of nanosized rode-like SnTe compounds.

  5. Nucleation and growth of noble metals on transition-metal di-tellurides

    Science.gov (United States)

    Hla, S. W.; Marinković, V.; Prodan, A.

    1997-04-01

    Transition-metal di-tellurides (α- and β-MoTe 2 and WTe 2) were used as substrates for nucleation and growth studies of noble metals. They represent a group of chemically closely related compounds with different surface topographies. Nucleation and growth of Ag and Au at room temperature were studied by means of UHV-STM, AFM and TEM. The results revealed that the growth and orientation of these metals are influenced by the topography of the substrate surfaces. Contrary to the growth on atomically flat α-MoTe 2, there is an enhanced diffusion and nucleation along the periodic surface troughs on β-MoTe 2 and WTe 2. The topography of their (001) surfaces is responsible for the orientation of metal (112) planes being parallel to the substrate surface.)

  6. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

    Science.gov (United States)

    Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  7. Experiments and Monte Carlo modeling of a higher resolution Cadmium Zinc Telluride detector for safeguards applications

    Science.gov (United States)

    Borella, Alessandro

    2016-09-01

    The Belgian Nuclear Research Centre is engaged in R&D activity in the field of Non Destructive Analysis on nuclear materials, with focus on spent fuel characterization. A 500 mm3 Cadmium Zinc Telluride (CZT) with enhanced resolution was recently purchased. With a full width at half maximum of 1.3% at 662 keV, the detector is very promising in view of its use for applications such as determination of uranium enrichment and plutonium isotopic composition, as well as measurement on spent fuel. In this paper, I report about the work done with such a detector in terms of its characterization. The detector energy calibration, peak shape and efficiency were determined from experimental data. The data included measurements with calibrated sources, both in a bare and in a shielded environment. In addition, Monte Carlo calculations with the MCNPX code were carried out and benchmarked with experiments.

  8. Epithermal Gold-Silver Deposits in Western Java, Indonesia: Gold-Silver Selenide-Telluride Mineralization

    Directory of Open Access Journals (Sweden)

    Euis Tintin Yuningsih

    2014-09-01

    Full Text Available DOI: 10.17014/ijog.v1i2.180The gold-silver ores of western Java reflect a major metallogenic event during the Miocene-Pliocene and Pliocene ages. Mineralogically, the deposits can be divided into two types i.e. Se- and Te-type deposits with some different characteristic features. The objective of the present research is to summarize the mineralogical and geochemical characteristics of Se- and Te-type epithermal mineralization in western Java. Ore and alteration mineral assemblage, fluid inclusions, and radiogenic isotope studies were undertaken in some deposits in western Java combined with literature studies from previous authors. Ore mineralogy of some deposits from western Java such as Pongkor, Cibaliung, Cikidang, Cisungsang, Cirotan, Arinem, and Cineam shows slightly different characteristics as those are divided into Se- and Te-types deposits. The ore mineralogy of the westernmost of west Java region such as Pongkor, Cibaliung, Cikidang, Cisungsang, and Cirotan is characterized by the dominance of silver-arsenic-antimony sulfosalt with silver selenides and rarely tellurides over the argentite, while to the eastern part of West Java such as Arinem and Cineam deposits are dominated by silver-gold tellurides. The average formation temperatures measured from fluid inclusions of quartz associated with ore are in the range of 170 – 220°C with average salinity of less than 1 wt% NaClequiv for Se-type and 190 – 270°C with average salinity of ~2 wt% NaClequiv for Te-type.

  9. Geology of the florencia gold – telluride deposit (camagüey, cuba) and some metallurgical considerations

    OpenAIRE

    López K Jesús M.; Moreira Jesús; Gandarillas José

    2011-01-01

    This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after b...

  10. Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

    International Nuclear Information System (INIS)

    A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N2 atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H2 (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We propose that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulting from the two-step method enhanced, rather than disturbed, the electron transport. Both the electrical conductivity and the Seebeck coefficient were improved following the two-step method. Consequently, the power factor of thin films that underwent the two-step method was enhanced to 20 times (from 0.96 to 21.0 μW/(cm K2) that of the thin films treated with EB irradiation alone

  11. Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

    Energy Technology Data Exchange (ETDEWEB)

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Kurita, Kensuke [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, 1 Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2015-08-14

    A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N{sub 2} atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H{sub 2} (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We propose that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulting from the two-step method enhanced, rather than disturbed, the electron transport. Both the electrical conductivity and the Seebeck coefficient were improved following the two-step method. Consequently, the power factor of thin films that underwent the two-step method was enhanced to 20 times (from 0.96 to 21.0 μW/(cm K{sup 2}) that of the thin films treated with EB irradiation alone.

  12. Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Devender,; Mehta, Rutvik J.; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Yamaguchi, Masashi [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-03-15

    Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

  13. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Airul Azha Abd [Universiti Kebangsaan Malaysia UKM, Institute of Microengineering and Nanoelectronics, Bangi, Selangor (Malaysia); Technology Park Malaysia, Malaysia Institute of Microelectronics and System, Kuala Lumpur (Malaysia); Umar, Akrajas Ali; Salleh, Muhamad Mat [Universiti Kebangsaan Malaysia UKM, Institute of Microengineering and Nanoelectronics, Bangi, Selangor (Malaysia); Chen, Xiaomei [Jimei University, College of Food and Biological Engineering, Jimei, Xiamen (China); Oyama, Munetaka [Kyoto University, Graduate School of Engineering, Nishikyoku, Kyoto (Japan)

    2016-02-15

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m{sup -1} K{sup -2}) and 10 μV/K (and 19.5 μW m{sup -1} K{sup -2}), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output

  14. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    International Nuclear Information System (INIS)

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m-1 K-2) and 10 μV/K (and 19.5 μW m-1 K-2), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

  15. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    International Nuclear Information System (INIS)

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors

  16. Novel Cadmium Zinc Telluride Devices for Myocardial Perfusion Imaging-Technological Aspects and Clinical Applications.

    Science.gov (United States)

    Ben-Haim, Simona; Kennedy, John; Keidar, Zohar

    2016-07-01

    Myocardial perfusion imaging plays an important role in the assessment of patients with known or suspected coronary artery disease and is well established for diagnosis and for prognostic evaluation in these patients. The dedicated cardiac SPECT cameras with solid-state cadmium zinc telluride (CZT) detectors were first introduced a decade ago. A large body of evidence is building up, showing the superiority of the new technology compared with conventional gamma cameras. Not only the CZT detectors, but also new collimator geometries, the ability to perform focused imaging optimized for the heart and advances in data processing algorithms all contribute to the significantly improved sensitivity up to 8-10 times, as well as improved energy resolution and improved reconstructed spatial resolution compared with conventional technology. In this article, we provide an overview of the physical characteristics of the CZT cameras, as well as a review of the literature published so far, including validation studies in comparison with conventional myocardial perfusion imaging and with invasive coronary angiography, significant reduction in radiation dose, and new imaging protocols enabled by the new technology.

  17. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    Energy Technology Data Exchange (ETDEWEB)

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  18. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  19. Directional Solidification of Mercury Cadmium Telluride During the Second United States Microgravity Payload Mission (USMP-2)

    Science.gov (United States)

    Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Watring, D. A.; Alexander, H. A.; Jerman, G. A.

    1996-01-01

    As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  20. Heart imaging by cadmium telluride gamma camera European Program 'BIOMED' consortium

    CERN Document Server

    Scheiber, C; Chambron, J; Prat, V; Kazandjan, A; Jahnke, A; Matz, R; Thomas, S; Warren, S; Hage-Hali, M; Regal, R; Siffert, P; Karman, M

    1999-01-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3x3 mm, field of view: 15 cmx15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15 deg. tilt of the collimator with respect to the detector grid. A 16x16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16...

  1. Influence of the Ion Coordination Number on Cation Exchange Reactions with Copper Telluride Nanocrystals

    CERN Document Server

    Tu, Renyong; Bertoni, Giovanni; Lak, Aidin; Gaspari, Roberto; Rapallo, Arnaldo; Cavalli, Andrea; De Trizio, Luca; Manna, Liberato

    2016-01-01

    Cu2-xTe nanocubes were used as starting seeds to access metal telluride nanocrystals by cation exchanges at room temperature. The coordination number of the entering cations was found to play an important role in dictating the reaction pathways. The exchanges with tetrahedrally coordinated cations (i.e. with coordination number 4), such as Cd2+ or Hg2+, yielded monocrystalline CdTe or HgTe nanocrystals with Cu2-xTe/CdTe or Cu2-xTe/HgTe Janus-like heterostructures as intermediates. The formation of Janus-like architectures was attributed to the high diffusion rate of the relatively small tetrahedrally coordinated cations, which could rapidly diffuse in the Cu2-xTe NCs and nucleate the CdTe (or HgTe) phase in a preferred region of the host structure. Also, with both Cd2+ and Hg2+ ions the exchange led to wurtzite CdTe and HgTe phases rather than the more stable zinc-blende ones, indicating that the anion framework of the starting Cu2- xTe particles could be more easily deformed to match the anion framework of t...

  2. Heart imaging by cadmium telluride gamma cameraEuropean Program ``BIOMED'' consortium

    Science.gov (United States)

    Scheiber, Ch.; Eclancher, B.; Chambron, J.; Prat, V.; Kazandjan, A.; Jahnke, A.; Matz, R.; Thomas, S.; Warren, S.; Hage-Hali, M.; Regal, R.; Siffert, P.; Karman, M.

    1999-06-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3×3 mm, field of view: 15 cm×15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parrallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15° tilt of the collimator with respect to the detector grid. A 16×16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16±0.6 keV (mean ± standard deviation, n=30). Uniformity was ±10%, improving to ±1% when using a correction table. Test objects (emission data: letters 1.8 mm in width) and cold rods in scatter medium have been acquired. The CdTe images have been compared to those acquired with a conventionnal gamma camera.

  3. Thin film cadmium telluride solar cells by two chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-01-15

    Cadmium telluride (CdTe) has long been recognized as a promising thin film photovoltaic material. In this work, polycrystalline p-CdTe films have been deposited by two chemical vapor deposition techniques, namely the combination of vapors of elements (CVE) and close-spaced sublimation (CSS). The CVE technique is more flexible in controlling the composition of deposited films while the CSS technique can provide very high deposition rates. The resistivity of p-CdTe films deposited by the CVE and CSS techniques can be controlled by intrinsic (cadmium vacancies) or extrinsic (arsenic or antimony) doping, and the lowest resistivity obtainable is about 200 ..cap omega.. cm. Both front-wall (CdTe/TCS/glass) and back-wall (TCS/CdTe/substrate) cells have been prepared. The back-wall cells are less efficient because of the high and irreproducible p-CdTe-substrate interface resistance. The CSS technique is superior to the CVE technique because of its simplicity and high deposition rates; however, the cleaning of the substrate in situ is more difficult. The interface cleanliness is an important factor determining the electrical and photovoltaic characteristics of the heterojunction. Heterojunction CdS/CdTe solar cells of area 1 cm/sup 2/ with conversion efficiencies higher than 10% have been prepared and junction properties characterized.

  4. Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe

    International Nuclear Information System (INIS)

    The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and hole drift length profiles were calculated

  5. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae.

    Science.gov (United States)

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  6. Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

    Energy Technology Data Exchange (ETDEWEB)

    Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh, E-mail: daryoosh.vashaee@okstate.edu [School of Electrical and Computer Engineering, Helmerich Advanced Technology Research Center, Oklahoma State University, Tulsa, Oklahoma 74106 (United States); Tahmasbi Rad, Armin [School of Material Science and Engineering, Helmerich Advanced Technology Research Center, Oklahoma State University, Tulsa, Oklahoma 74106 (United States); Tayebi, Lobat, E-mail: daryoosh.vashaee@okstate.edu [School of Chemical Engineering, Oklahoma State University, Stillwater, Oklahoma 74078 (United States)

    2014-05-28

    Nanocomposite thermoelectric compound of bismuth telluride (Bi{sub 2}Te{sub 3}) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi{sub 2}Te{sub 3} were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

  7. Investigation of the electrochemical deposition of thick layers of cadmium telluride

    International Nuclear Information System (INIS)

    This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented

  8. 3D Particle Track Reconstrution in a Single Layer Cadmium-Telluride Hybrid Active Pixel Detector

    CERN Document Server

    Filipenko, Mykhaylo; Anton, Gisela; Michel, Thilo

    2014-01-01

    In the past 20 years the search for neutrinoless double beta decay has driven many developements in all kind of detector technology. A new branch in this field are highly-pixelated semiconductor detectors - such as the CdTe-Timepix detectors. It compromises a cadmium-telluride sensor of 14 mm x 14 mm x 1 mm size with an ASIC which has 256 x 256 pixel of 55 \\textmu m pixel pitch and can be used to obtain either spectroscopic or timing information in every pixel. In regular operation it can provide a 2D projection of particle trajectories; however, three dimensional trajectories are desirable for neutrinoless double beta decay and other applications. In this paper we present a method to obtain such trajectories. The method was developed and tested with simulations that assume some minor modifications to the Timepix ASIC. Also, we were able to test the method experimentally and in the best case achieved a position resolution of about 90 \\textmu m with electrons of 4.4 GeV.

  9. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    Science.gov (United States)

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  10. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

    Energy Technology Data Exchange (ETDEWEB)

    Sizov, F.; Zabudsky, V.; Petryakov, V.; Golenkov, A.; Andreyeva, K.; Tsybrii, Z. [Institute of Semiconductor Physics, 03028 Kiev (Ukraine); Dvoretskii, S. [Institute of Semiconductor Physics of SB RAS, 630090 Novosibirsk (Russian Federation)

    2015-02-23

    In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

  11. Synthesis of the titanium phosphide telluride Ti2PTe2: A thermochemical approach

    International Nuclear Information System (INIS)

    The phosphide telluride Ti2PTe2 can be synthesised from the elements or from oxides in a thermite type reaction. Both ways have been optimised by consideration of the thermodynamic behaviour of the compound. Hence, the investigation of phase equilibria in the ternary system Ti/P/Te and of the thermal decomposition of Ti2PTe2 was necessary. This investigation was performed by using different experimental approaches as total pressure measurements, thermal analysis and mass spectrometry. The results were supported and further analysed by thermodynamic modelling of the ternary system. It was shown that Ti2PTe2(s) decomposes to Ti2P(s) and Te2(g) in six consecutive steps. The growth of single crystals of Ti2PTe2 is thermodynamically described as a chemical vapour transport with TiCl4(g) acting as the transport agent. - Graphical abstract: Oxygen partial pressure and electrochemical potential above the oxides of titanium, tellurium and phosphorus calculated at 1000 K, marked: level of equalisation of oxygen partial pressure

  12. Semiconductor nanocrystals functionalized with antimony telluride zintl ions for nanostructured thermoelectrics.

    Science.gov (United States)

    Kovalenko, Maksym V; Spokoyny, Boris; Lee, Jong-Soo; Scheele, Marcus; Weber, Andrew; Perera, Susanthri; Landry, Daniel; Talapin, Dmitri V

    2010-05-19

    The energy efficiency of heat engines could be improved by the partial recovery of waste heat using thermoelectric (TE) generators. We show the possibility of designing nanostructured TE materials using colloidal inorganic nanocrystals functionalized with molecular antimony telluride complexes belonging to the family of Zintl ions. The unique advantage of using Zintl ions as the nanocrystal surface ligands is the possibility to convert them into crystalline metal chalcogenides, thus linking individual nanobuilding blocks into a macroscopic assembly of electronically coupled functional modules. This approach allows preserving the benefits of nanostructuring and quantum confinement while enabling facile charge transport through the interparticle boundaries. A developed methodology was applied for solution-based fabrication of nanostructured n- and p-type Bi(2-x)Sb(x)Te(3) alloys with tunable composition and PbTe-Sb(2)Te(3) nanocomposites with controlled grain size. Characterization of the TE properties of these materials showed that their Seebeck coefficients, electrical and thermal conductivities, and ZT values compared favorably with those of previously reported solution-processed TE materials.

  13. Synthesis and characterization of bismuth telluride based nanostructured thermoelectric composite materials

    Science.gov (United States)

    Keshavarz Khorasgani, Mohsen

    Thermoelectric (TE) materials and devices are attractive in solid-state energy conversion applications such as waste heat recovery, air-conditioning, and refrigeration. Since the 1950's lots of unremitting efforts have been made to enhance the efficiency of energy conversion in TE materials (i. e. improving the figure of merit (ZT)), however, most of commercial bulk TE materials still suffer from low efficiency with ZTs around unity. To enhance the performance of bismuth telluride based TE alloys, we have developed composite TE materials, based on the idea that introducing more engineered interfaces in the bulk TE materials may lead to thermal conductivity reduction due to increased phonon scattering by these interfaces. In this approach it is expected that the electronic transport properties of the material are not effectively affected. Consequently, ZT enhancement can be achieved. In this dissertation we will discuss synthesis and characterization of two types of bismuth telluride based bulk composite TE materials. The first type is engineered to contain the presence of coherent interfaces between phases in the material resulting from different mixtures of totally miscible compounds with similar composition. The second type includes the nanocomposites with embedded foreign nano-particles in which the matrix and the particles are delimited by incoherent interfaces. The synthesis procedure, micro- and nano-structures as well as thermoelectric properties of these composites will be presented. In our study on the composites with coherent interfaces, we produced a series of different composites of p-type bismuth antimony telluride alloys and studied their microstructure and thermoelectric properties. Each composite consists of two phases that were obtained in powder form by mechanical alloying. Mixed powders in various proportions of the two different phases were consolidated by hot extrusion to obtain each bulk composite. The minimum grain size of bulk composites as

  14. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    Science.gov (United States)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  15. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beck, Patrick R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  16. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    Science.gov (United States)

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-01-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations. PMID:27669995

  17. Field and photo-emission in a short-pulse, high-charge Cesium telluride RF photoinjector

    Science.gov (United States)

    Wisniewski, Eric E.

    A new high-charge RF gun is now operating at the Argonne Wakefield Accelerator (AWA) facility at Argonne National Laboratory (ANL). The 1.5 cell 1.3 GHz gun uses a Cesium telluride photocathode driven with a 248 nm laser to provide short-pulse, high charge electron beams for the new 75 MeV drive beamline. The high-gradient RF gun (peak field on the cathode > 80MV/m) is a key piece of the facility upgrade. The large Cs2Te photocathode (diameter > 30 mm) was fabricated in-house. The photo-injector will be used to generate high-charge, short pulse, single bunches (Q > 100 nC) and bunch-trains (Q > 1000 nC) for wakefield experiments, typically involving dielectric-loaded accelerating structures. Details of the photocathode fabrication process and the results of associated diagnostic measurements are presented, including QE measurements and work function measurements performed with a Kelvin probe. Fieldemitted dark current from the Cs2Te cathode was measured during RF conditioning and characterized. Fowler-Nordheim plots of the data are presented and compared to similar measurements made using a copper cathode in the initial phase of conditioning. The results for cesium telluride exhibited non-linear regions within the Fowler-Nordheim plots similar to previous experimental results for other p-type semiconductors. Results of quantum efficiency (QE) studies are presented with the cathode operating in both single and bunch-train modes. QE uniformity and lifetime studies are presented. During commissioning, the cesium telluride photocathode produced bunch-charge of 100 nC, breaking the previous record. No evidence of bunch-train position-dependence of QE was found when generating four-bunch trains with total charge up to 200 nC.

  18. The Lattice Compatibility Theory: Arguments for Recorded I-III-O2 Ternary Oxide Ceramics Instability at Low Temperatures beside Ternary Telluride and Sulphide Ceramics

    Directory of Open Access Journals (Sweden)

    K. Boubaker

    2013-01-01

    Full Text Available Some recorded behaviours differences between chalcopyrite ternary oxide ceramics and telluride and sulphides are investigated in the framework of the recently proposed Lattice Compatibility Theory (LCT. Alterations have been evaluated in terms of Urbach tailing and atomic valence shell electrons orbital eigenvalues, which were calculated through several approximations. The aim of the study was mainly an attempt to explain the intriguing problem of difficulties of elaborating chalcopyrite ternary oxide ceramics (I-III-O2 at relatively low temperatures under conditions which allowed crystallization of ternary telluride and sulphides.

  19. The effects of nanoparticle inclusions upon the microstructure and thermoelectric transport properties of bismuth telluride-based composites

    Science.gov (United States)

    Gothard, Nicholas Wesley

    Research into materials that have high efficiencies of thermoelectric heat-energy conversion has been at a plateau since the middle of the last century. During this time, efficiencies have been engineered high enough for several interesting niche applications but not high enough for widespread adaptation into traditional power generation or refrigeration technologies. The past decade has seen considerable advancement, as a number of theoretical works have suggested that lower dimensional structures could hold the key for enhanced efficiency, and several experiments have provided the proof of principle needed to inspire just such a research direction. The benefit of low dimensional structures for thermoelectric efficiency comes from both the potential enhancement of the electronic properties due to quantum confinement effects as well as from the potential for increased scattering of heat-carrying phonons. Widespread application of these principles for technological application requires the creation of composites of nanostructures that can be manufactured easily with dimensions on the bulk materials scale. A good starting point for such materials research is to manufacture composites of materials that are currently known to have high thermoelectric efficiencies by incorporating nanostructures into a bulk matrix. The goal of this project is to create nanocomposites using bismuth telluride, a compound known to have one of the highest thermoelectric efficiencies at room temperature, as a matrix material. Various methods of synthesizing sufficient quantities of bismuth telluride nanostructures were attempted, including pulsed laser vaporization, chemical vapor deposition, and solvothermal synthesis. The method of solvothermal synthesis was found to be the simplest approach for producing high yields of bismuth telluride nanostructures. In the initial stages of the project, cold pressing was tested as a means of compaction, but in the end a uniaxial hot pressing technique

  20. Characterization of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by floating zone method

    Science.gov (United States)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Gul, R.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneeloch, J.; James, R. B.

    2014-09-01

    Recently, Cadmium Manganese Telluride (CMT) emerged as a promising material for roomtemperature X- and gamma-ray detectors. However, our studies revealed several material defects primarily related to growth processes that are impeding the production of large single crystals with high resistivity and high mobility-lifetime product. In this work, we characterized various defects in materials grown by the floating zone method, including twins, Te inclusions, and dislocations, using our unique facilities. We also fabricated detectors from selected CMT crystals and tested their performance. This paper discusses our detailed findings on the material's properties and the performance of fabricated CMT detectors.

  1. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2

    Science.gov (United States)

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M.; Wu, Jerry J.

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes.

  2. On the possible role played by tunnel recombination in the loss processes of excess current carriers in cadmium telluride

    Science.gov (United States)

    Novikov, G. F.; Marinin, A. A.; Gapanovich, M. V.; Rabenok, E. V.

    2010-05-01

    The microwave photoconductivity method was used to study the kinetics of the decay of current carriers generated by nitrogen laser pulses in n- and p-type cadmium telluride. The dependences of the shape and amplitude of photoresponse decays on temperature and light intensity were studied. Photoresponse decays contained "fast" (at t 50 ns) components. At long times, the dependence of photoresponse on the logarithm of time was linear. The shape of slow component decays was almost independent of temperature. The slow component of photoresponse decay could correspond to the loss process of entrapped charges in tunnel recombination.

  3. NaBH{sub 4}/[bmim]BF{sub 4}: a new reducing system to access vinyl selenides and tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Lenardao, Eder J.; Goncalves, Loren C.C.; Mendes, Samuel R.; Saraiva, Maiara T.; Alves, Diego; Jacob, Raquel G.; Perin, Gelson, E-mail: lenardao@ufpel.edu.b [Universidade Federal de Pelotas (UFPel), RS (Brazil). Inst. de Quimica e Geociencias. Lab. de Sintese Organica Limpa (LASOL)

    2010-07-01

    A general and simple method for the synthesis of vinyl selenides and tellurides starting from terminal alkynes and diorganyl chalcogenides using NaBH{sub 4} and [bmim]BF{sub 4} as a recyclable solvent was developed. This efficient and improved method furnishes the corresponding vinyl chalcogenides preferentially with Z configuration. We also observed that when the same protocol was applied to phenyl acetylene, (E)-bis-phenylchalcogeno styrenes were obtained in good yields and high selectivity. The ionic liquid was reused up three times without lost of efficiency. (author)

  4. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2.

    Science.gov (United States)

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M; Wu, Jerry J

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes. PMID:27131144

  5. Cadmium zinc telluride based infrared interferometry for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Lohstroh, A., E-mail: A.Lohstroh@surrey.ac.uk; Della Rocca, I. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Parsons, S. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); AWE Aldermaston, Reading RG7 4PR (United Kingdom); Langley, A.; Shenton-Taylor, C.; Blackie, D. [AWE Aldermaston, Reading RG7 4PR (United Kingdom)

    2015-02-09

    Cadmium Zinc Telluride (CZT) is a wide band gap semiconductor for room temperature radiation detection. The electro-optic Pockels effect of the material has been exploited in the past to study electric field non-uniformities and their consequence on conventional detector signals in CZT, by imaging the intensity distribution of infrared (IR) light transmitted through a device placed between crossed polarizers. Recently, quantitative monitoring of extremely high intensity neutron pulses through the change of transmitted IR intensity was demonstrated, offering the advantage to place sensitive electronics outside the measured radiation field. In this work, we demonstrate that X-ray intensity can be deduced directly from measuring the change in phase of 1550 nm laser light transmitted through a 7 × 7 × 2 mm{sup 3} CZT based Pockels cell in a simple Mach Zehnder interferometer. X-rays produced by a 50 kVp Mo X-ray tube incident on the CZT cathode surface placed at 7 mm distance cause a linearly increasing phase shift above 0.3 mA tube current, with 1.58 ± 0.02 rad per mA for an applied bias of 500 V across the 2 mm thick device. Pockels images confirm that the sample properties are in agreement with the literature, exhibiting electric field enhancement near the cathode under irradiation, which may cause the non-linearity at low X-ray tube anode current settings. The laser used to probe the X-ray intensity causes itself some space charge, whose spatial distribution does not seem to be exclusively determined by the incident laser position, i.e., charge carrier generation location, with respect to the electrodes.

  6. Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

    2015-03-25

    Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

  7. Spectroscopic, microscopic, and internal stress analysis in cadmium telluride grown by close-space sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Manciu, Felicia S., E-mail: fsmanciu@utep.edu [Department of Physics, The University of Texas at El Paso, El Paso, TX 79968 (United States); Salazar, Jessica G. [Department of Physics, The University of Texas at El Paso, El Paso, TX 79968 (United States); Diaz, Aryzbe; Quinones, Stella A. [Department of Electrical and Computer Engineering, The University of Texas at El Paso, El Paso, TX 79968 (United States)

    2015-08-31

    High quality materials with excellent ordered structure are needed for developing photovoltaic and infrared devices. With this end in mind, the results of our research prove the importance of a detailed, comprehensive spectroscopic and microscopic analysis in assessing cadmium telluride (CdTe) characteristics. The goal of this work is to examine not only material crystallinity and morphology, but also induced stress in the deposit material. A uniform, selective growth of polycrystalline CdTe by close-space sublimation on patterned Si(111) and Si(211) substrates is demonstrated by scanning electron microscopy images. Besides good crystallinity of the samples, as revealed by both Raman scattering and Fourier transform infrared absorption investigations, the far-infrared transmission data also show the presence of surface optical phonon modes, which is direct evidence of confinement in such a material. The qualitative identification of the induced stress was achieved by performing confocal Raman mapping microscopy on sample surfaces and by monitoring the existence of the rock-salt and zinc-blende structural phases of CdTe, which were associated with strained and unstrained morphologies, respectively. Although the induced stress in the material is still largely due to the high lattice mismatch between CdTe and the Si substrate, the current results provide a direct visualization of its partial release through the relaxation effect at crystallite boundaries and of preferential growth directions of less strain. Our study, thus offers significant value for improvement of material properties, by targeting the needed adjustments in the growth processes. - Highlights: • Assessing the characteristics of CdTe deposited on patterned Si substrates • Proving the utility of confocal Raman microscopy in monitoring the induced stress • Confirming the partial stress release through the grain boundary relaxation effect • Demonstrating the phonon confinement effect in low

  8. Cadmium zinc telluride based infrared interferometry for X-ray detection

    International Nuclear Information System (INIS)

    Cadmium Zinc Telluride (CZT) is a wide band gap semiconductor for room temperature radiation detection. The electro-optic Pockels effect of the material has been exploited in the past to study electric field non-uniformities and their consequence on conventional detector signals in CZT, by imaging the intensity distribution of infrared (IR) light transmitted through a device placed between crossed polarizers. Recently, quantitative monitoring of extremely high intensity neutron pulses through the change of transmitted IR intensity was demonstrated, offering the advantage to place sensitive electronics outside the measured radiation field. In this work, we demonstrate that X-ray intensity can be deduced directly from measuring the change in phase of 1550 nm laser light transmitted through a 7 × 7 × 2 mm3 CZT based Pockels cell in a simple Mach Zehnder interferometer. X-rays produced by a 50 kVp Mo X-ray tube incident on the CZT cathode surface placed at 7 mm distance cause a linearly increasing phase shift above 0.3 mA tube current, with 1.58 ± 0.02 rad per mA for an applied bias of 500 V across the 2 mm thick device. Pockels images confirm that the sample properties are in agreement with the literature, exhibiting electric field enhancement near the cathode under irradiation, which may cause the non-linearity at low X-ray tube anode current settings. The laser used to probe the X-ray intensity causes itself some space charge, whose spatial distribution does not seem to be exclusively determined by the incident laser position, i.e., charge carrier generation location, with respect to the electrodes

  9. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    Science.gov (United States)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  10. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    Science.gov (United States)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  11. Investigations of portable cadmium telluride (CdTe(Cl)) detectors for clinical studies with radioactive indicators

    International Nuclear Information System (INIS)

    The combination of small, portable γ-radiation-sensitive Cadmium Telluride (CdTE(Cl)) crystal detectors and portable solid state data storage memories makes it feasible to extend the measuring period in a number of clinical investigations based on the use of various radioisotopes and external detection. Blood sampling can be avoided in some cases. Continuous ambulatory monitoring of relevant physiological parameters is practicable, e.g. kidney function (GFR), left ventricular ejection fraction, subcutaneous blood flow, muscle blood flow and insulin absorption in diabetic patients. In the present methodological study the applicability of the 133-Xe washout technique to subcutaneous (s.c.) adipose tissue blood flow (SBF) has been investigated and adapted to the use of CdTe(Cl) detectors attached to the skin surface for the measurement of local 133-Xe-disappearance rate constants (k). Physical characterization of CdTe(Cl) detectors as γ-sensitive devices has been performed, and adequate counting sensitivities were found without detector energy-resolution properties. The CdTe(Cl) detectors are therefore suitable for single indicator studies. The measuring geometry of CdTe(Cl) detectors was studied and compared with that of stationary Sodium Iodide (NaI(Tl)) detectors in both phantom and in vivo investigations. The spatial properties of CdTe(Cl) detectors could to some extent be adjusted by pulse height discrimination and lead collimation. When long-term measurements were complicated by for instance physical activity of the patients, the small CdTe(Cl) detectors in general showed equal or better performance than the heavy and voluminous NaI(Tl) detectors. The free movement of the ambulatory patient and the avoidance of cable connections to stationary data-collecting systems gave improved possibilities for measurements of the relevant parameters. From this point of view, portable CdTe(Cl) detectors must be considered an important advance for radioactivity studies in

  12. Electronic control of germanium telluride (GeTe) phase transition for electronic memory applications

    Science.gov (United States)

    Gwin, Alex H.; Coutu, Ronald A.

    2014-03-01

    Germanium telluride (GeTe) is a phase change material (PCM) that undergoes an exponential decrease in resistance from room temperature to its transition temperature at approximately 200 °C. Its resistivity decreases by as much as six orders of magnitude between amorphous and crystalline phases as it is heated. Chalcogenides such as GeTe have been utilized typically in nonvolatile optical memories such as CDs, DVDs, and Blu-ray discs, where the change in reflectivity between phases gives enough contrast for ON and OFF bits. Research over the past several years has begun to characterize the electronic control of PCM thin films for advanced electronic memory applications. By applying a voltage to control its resistance and crystallinity, GeTe has become a candidate for ultra-fast switching electronic memory, perhaps as an alternative to Flash memory. In this research, micro-scale PCM cells were fabricated using RF sputtering of a GeTe target and electron-beam evaporation on c-Si, SiO2/Si, Si3N4/Si, and Al2O3. Characterizations of the crystallization process were completed with spectroscopic ellipsometry (SE), varied voltage, and varied temperature in order to draw a comparison of the switching mechanism between thermally and electronically induced transition. The results show an optical contrast of Δn + iΔk = -0.858 + i1.056. Heat conduction experiments prove a growthdominated crystallization and fracturing of conductive crystallites when deposited on Al2O3. PCM cells exhibit memory-like I-V curves for smaller cell dimensions according to the trap-limited conduction model in chalcogenides. RF structures show the capability of being utilized as improved RF switches.

  13. Friction Consolidation Processing of n-Type Bismuth-Telluride Thermoelectric Material

    Science.gov (United States)

    Whalen, Scott; Jana, Saumyadeep; Catalini, David; Overman, Nicole; Sharp, Jeffrey

    2016-07-01

    Refined grain sizes and texture alignment have been shown to improve transport properties in bismuth-telluride (Bi2Te3) based thermoelectric materials. In this work we demonstrate a new approach, called friction consolidation processing (FCP), for consolidating Bi2Te3 thermoelectric powders into bulk form with a high degree of grain refinement and texture alignment. FCP is a solid-state process wherein a rotating tool is used to generate severe plastic deformation within the Bi2Te3 powder, resulting in a recrystallizing flow of material. Upon cooling, the far-from-equilibrium microstructure within the flow can be retained in the material. FCP was demonstrated on n-type Bi2Te3 feedstock powder having a -325 mesh size to form pucks with a diameter of 25.4 mm and thickness of 4.2 mm. Microstructural analysis confirmed that FCP can achieve highly textured bulk materials, with sub-micrometer grain size, directly from coarse feedstock powders in a single process. An average grain size of 0.8 μm was determined for regions of one sample and a multiple of uniform distribution (MUD) value of 15.49 was calculated for the (0001) pole figure of another sample. These results indicate that FCP can yield ultra-fine grains and textural alignment of the (0001) basal planes in Bi2Te3. ZT = 0.37 at 336 K was achieved for undoped stoichiometric Bi2Te3, which approximates literature values of ZT = 0.4-0.5. These results point toward the ability to fabricate bulk thermoelectric materials with refined microstructure and desirable texture using far-from-equilibrium FCP solid-state processing.

  14. Selenide and telluride glasses for mid-infrared bio-sensing

    Science.gov (United States)

    Cui, Shuo; Chahal, Radwan; Shpotyuk, Yaroslav; Boussard, Catherine; Lucas, Jacques; Charpentier, Frederic; Tariel, Hugues; Loréal, Olivier; Nazabal, Virginie; Sire, Olivier; Monbet, Valérie; Yang, Zhiyong; Lucas, Pierre; Bureau, Bruno

    2014-02-01

    Fiber Evanescent Wave Spectroscopy (FEWS) is an efficient way to collect optical spectra in situ, in real time and even, hopefully, in vivo. Thanks to selenide glass fibers, it is possible to get such spectra over the whole mid-infrared range from 2 to 12 μm. This working window gives access to the fundamental vibration band of most of biological molecules. Moreover selenide glasses are stable and easy to handle, and it is possible to shape the fiber and create a tapered sensing head to drastically increase the sensitivity. Within the past decades, numerous multi-disciplinary studies have been conducted in collaboration with the City Hospital of Rennes. Clinical trials have provided very promising results in biology and medicine which have led to the creation in 2011 of the DIAFIR Company dedicated to the commercialization of fiber-based infrared biosensors. In addition, new glasses based on tellurium only have been recently developed, initially in the framework of the Darwin mission led by the European Space Agency (ESA). These glasses transmit light further into the far-infrared and could also be very useful for medical applications in the near future. Indeed, they permit to reach the vibrational bands of biomolecules laying from 12 to 16 μm where selenide glasses do not transmit light anymore. However, while Se is a very good glass former, telluride glasses tend to crystallize easily due to the metallic nature of Te bonds. Hence, further work is under way to stabilize the glass composition for fibers drawing and to lower the optical losses for improving their sensitivity as bio-sensors.

  15. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

    Science.gov (United States)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-19

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance. PMID:27389820

  16. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing

    Science.gov (United States)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-01

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson–Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm‑1 K‑2), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

  17. Influence of the Ion Coordination Number on Cation Exchange Reactions with Copper Telluride Nanocrystals.

    Science.gov (United States)

    Tu, Renyong; Xie, Yi; Bertoni, Giovanni; Lak, Aidin; Gaspari, Roberto; Rapallo, Arnaldo; Cavalli, Andrea; Trizio, Luca De; Manna, Liberato

    2016-06-01

    Cu2-xTe nanocubes were used as starting seeds to access metal telluride nanocrystals by cation exchanges at room temperature. The coordination number of the entering cations was found to play an important role in dictating the reaction pathways. The exchanges with tetrahedrally coordinated cations (i.e., with coordination number 4), such as Cd(2+) or Hg(2+), yielded monocrystalline CdTe or HgTe nanocrystals with Cu2-xTe/CdTe or Cu2-xTe/HgTe Janus-like heterostructures as intermediates. The formation of Janus-like architectures was attributed to the high diffusion rate of the relatively small tetrahedrally coordinated cations, which could rapidly diffuse in the Cu2-xTe NCs and nucleate the CdTe (or HgTe) phase in a preferred region of the host structure. Also, with both Cd(2+) and Hg(2+) ions the exchange led to wurtzite CdTe and HgTe phases rather than the more stable zinc-blende ones, indicating that the anion framework of the starting Cu2-xTe particles could be more easily deformed to match the anion framework of the metastable wurtzite structures. As hexagonal HgTe had never been reported to date, this represents another case of metastable new phases that can only be accessed by cation exchange. On the other hand, the exchanges involving octahedrally coordinated ions (i.e., with coordination number 6), such as Pb(2+) or Sn(2+), yielded rock-salt polycrystalline PbTe or SnTe nanocrystals with Cu2-xTe@PbTe or Cu2-xTe@SnTe core@shell architectures at the early stages of the exchange process. In this case, the octahedrally coordinated ions are probably too large to diffuse easily through the Cu2-xTe structure: their limited diffusion rate restricts their initial reaction to the surface of the nanocrystals, where cation exchange is initiated unselectively, leading to core@shell architectures. Interestingly, these heterostructures were found to be metastable as they evolved to stable Janus-like architectures if annealed at 200 °C under vacuum.

  18. Influence of the Ion Coordination Number on Cation Exchange Reactions with Copper Telluride Nanocrystals.

    Science.gov (United States)

    Tu, Renyong; Xie, Yi; Bertoni, Giovanni; Lak, Aidin; Gaspari, Roberto; Rapallo, Arnaldo; Cavalli, Andrea; Trizio, Luca De; Manna, Liberato

    2016-06-01

    Cu2-xTe nanocubes were used as starting seeds to access metal telluride nanocrystals by cation exchanges at room temperature. The coordination number of the entering cations was found to play an important role in dictating the reaction pathways. The exchanges with tetrahedrally coordinated cations (i.e., with coordination number 4), such as Cd(2+) or Hg(2+), yielded monocrystalline CdTe or HgTe nanocrystals with Cu2-xTe/CdTe or Cu2-xTe/HgTe Janus-like heterostructures as intermediates. The formation of Janus-like architectures was attributed to the high diffusion rate of the relatively small tetrahedrally coordinated cations, which could rapidly diffuse in the Cu2-xTe NCs and nucleate the CdTe (or HgTe) phase in a preferred region of the host structure. Also, with both Cd(2+) and Hg(2+) ions the exchange led to wurtzite CdTe and HgTe phases rather than the more stable zinc-blende ones, indicating that the anion framework of the starting Cu2-xTe particles could be more easily deformed to match the anion framework of the metastable wurtzite structures. As hexagonal HgTe had never been reported to date, this represents another case of metastable new phases that can only be accessed by cation exchange. On the other hand, the exchanges involving octahedrally coordinated ions (i.e., with coordination number 6), such as Pb(2+) or Sn(2+), yielded rock-salt polycrystalline PbTe or SnTe nanocrystals with Cu2-xTe@PbTe or Cu2-xTe@SnTe core@shell architectures at the early stages of the exchange process. In this case, the octahedrally coordinated ions are probably too large to diffuse easily through the Cu2-xTe structure: their limited diffusion rate restricts their initial reaction to the surface of the nanocrystals, where cation exchange is initiated unselectively, leading to core@shell architectures. Interestingly, these heterostructures were found to be metastable as they evolved to stable Janus-like architectures if annealed at 200 °C under vacuum. PMID:27177274

  19. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    Directory of Open Access Journals (Sweden)

    Fan J

    2016-07-01

    Full Text Available Junpeng Fan,1–4 Ming Shao,1–4 Lu Lai,3–5 Yi Liu,3–5 Zhixiong Xie1–4,6 1College of Life Sciences, Wuhan University, 2Hubei Provincial Cooperative Innovation Center of Industrial Fermentation,3State Key Laboratory of Virology, 4Key Laboratory of Analytical Chemistry for Biology and Medicine (MOE, 5College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 6School of Life Science and Technology, Hubei Engineering University, Xiaogan, People’s Republic of China Abstract: Cadmium telluride quantum dots (CdTe QDs are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator, combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. Keywords: CdTe quantum dots, Saccharomyces cerevisiae, toxicity, autophagy

  20. Thin-film cadmium telluride solar cells: Final subcontract report, 1 May 1985--31 May 1988

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-06-01

    This report describes results of research performed to demonstrate thin-film cadmium telluride heterojunction solar cells with a total area greater than 1 cm/sup 2/ and efficiencies of 13% or higher. Efforts were directed to (1) the deposition, resistivity control, and characterization of p-CdTe films by combining the vapor of the elements (CVE) and close-spaced sublimation (CSS) techniques; (2) the deposition and characterization of transparent conducting semiconductors; (3) the deposition of p-HgTe as a low-resistance ohmic contact to p-CdTe; (4) the electrical properties of CdS/CdTe heterojunctions; and (5) the preparation and evaluation of heterojunction solar cells. CdS/CdTe solar cells showed the best photovoltaic characteristics, and the best cell had a conversion efficiency of about 10.6%. 20 refs., 30 figs., 1 tab.

  1. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots

    Science.gov (United States)

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9 × 10-6-6.1 × 10-5 mol L-1 with a detection limit of 1.1 × 10-7 mol L-1. The sensor was applied for determination of doxycycline in honey and human serum samples.

  2. Cuprous Iodide Catalyzed Synthesis of Diaryl Selenide and Telluride from Organoboronic Acids with Diphenyl Diselenide and Ditelluride

    Institute of Scientific and Technical Information of China (English)

    WANG,Lei; WANG,Min; YAN,Jin-Can; LI,Pin-Hua

    2004-01-01

    @@ Organoselenium and tellurium compounds have received much attention not only as synthetic reagents or intermediates in organic synthesis but also as promising donor molecules for conductive materials.[1] A number of synthetic methods have been reported to prepare organoselenium and tellurium derivatives. A convenient and general method to introduce a selenium or tellurium moiety into organic molecules is the reaction of a metal selenolate or tellurolate with appropriate electrophiles such as organic halides, acyl chlorides, epoxides, and α, β-enones.[2] However, it is difficult to synthesize the unsymmetrical diarylselenides and tellurides through the reaction of selenide anion with organic halides because of the less reactivity of aryl halides. To accomplish this purpose, the reaction (iodobenzene with phenylselenol)was generally carried out in the presence of catalysts, ligands and strong bases. But, the reaction needs longer time to accomplish and form the products in moderate yields.

  3. Thin-film cadmium telluride photovoltaic cells. Final subcontract report, 1 November 1992--1 January 1994

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Bohn, R.G. [Toledo Univ., OH (United States)

    1994-09-01

    This report describes work to develop and optimize radio-frequency (rf) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by rf sputtering was studied as a function of substrate temperature, gas pressure, and rf power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

  4. Baseline Evaluation of Thin-Film Amorphous Silicon, Copper Indium Diselenide, and Cadmium Telluride for the 21st Century: Preprint

    International Nuclear Information System (INIS)

    This paper examines three thin-film PV technologies: amorphous silicon, cadmium telluride, and copper indium selenide. The purpose is to: (1) assess their status and potential; (2) provide an improved set of criteria for comparing these existing thin films against any new PV technological alternatives, and examining the longer-term (c. 2050) potential of thin films to meet cost goals that would be competitive with conventional sources of energy without any added value from the substantial environmental advantages of PV. Among the conclusions are: (1) today's thin films have substantial economic potential, (2) any new approach to PV should be examined against the substantial achievements and potential of today's thin films, (3) the science and technology base of today's thin films needs substantial strengthening, (4) some need for alternative technologies exists, especially as the future PV marketplace expands beyond about 30 GW of annual production

  5. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and 125Te NMR measurements in complex tellurides

    Science.gov (United States)

    Levin, E. M.

    2016-06-01

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S , depends on the free (mobile) carrier concentration, n , and effective mass, m*, as S ˜m*/n2 /3 . The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1 /T1 , depends on both n and m* as 1 /T1˜(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1 /T1˜(m*)2n2 /3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study A gxS bxG e50-2xT e50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  6. Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

    Science.gov (United States)

    Krishna, Ramesh M.

    In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of

  7. Thermoelectrically-cooled Cadmium Zinc Telluride detectors (CZT) for X-ray and gamma-ray detection

    International Nuclear Information System (INIS)

    Recently, Cadmium Zinc Telluride (CZT) became one of the most promising room temperature semiconductor detectors. Although significant progress has been made in the growth and characterization of CZT crystals, the energy resolution of CZT detectors at room temperature is still limited by leakage current and the charge transport effects. To optimize the performance of the room temperature CZT detectors a compromise should be made when selecting the shaping time constant of the spectroscopy amplifier. A short shaping time constant reduces leakage current fluctuations. However, the short pulse shapes are more sensitive to ballistic deficit and charge collection fluctuations. In addition, when short shaping time constants are used, the charge sensitive preamplifier noise limits the energy resolution, especially when low energy X-rays are detected. It is therefore important to reduce the leakage current of the detector and to keep the preamplifier noise as low as possible. One way to do this is to cool the detector, the front stage, and the feedback components of the preamplifier. This paper describes a compact, thermoelectrically-cooled radiation detector using a CZT crystal, designated the XR-100T-CZT. (J.P.N.)

  8. Effect of oxygen on structural stability of nitrogen-doped germanium telluride films with and without silicon nitride layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki-Hong [AE group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd. Yongin, 446-712 (Korea, Republic of); Choi, Sang-Jun, E-mail: sangjun5545.choi@samsung.com [System LSI, Samsung Electronics Co. Ltd., Yong-In, 446-712 (Korea, Republic of); Kyoung, Yong-Koo; Lee, Jun-Ho [AE group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd. Yongin, 446-712 (Korea, Republic of)

    2012-03-30

    Nitrogen-doped germanium telluride (N-GeTe) films with and without silicon nitride (SiN) layer were thermally annealed in an air atmosphere. The SiN layer prevented the oxidation of GeTe films despite the massive in-diffusion of oxygen atoms. The phase transition from cubic to rhombohedral phase occurred only in the air-annealed samples, not in the samples annealed at 2.0 mPa. The in-diffused oxygen is probably the leading cause of this phase transition. N-GeTe films without SiN layer showed an increase in sheet resistance after 1000 min of air annealing; this could be attributable to a phase transition from the cubic GeTe phase to the amorphous germanium oxide and metallic tellurium phases. - Highlights: Black-Right-Pointing-Pointer SiN layer prevented oxidation of GeTe despite the massive in-diffusion of oxygen. Black-Right-Pointing-Pointer The in-diffused oxygen have a critical role in the changes of crystal structure. Black-Right-Pointing-Pointer N-GeTe exhibited phase transition into amorphous Ge oxide and metallic Te phase.

  9. Controlled cadmium telluride thin films for solar-cell applications. Final technical report, June 1, 1980-May 31, 1981

    Energy Technology Data Exchange (ETDEWEB)

    Das, M.B.; Krishnaswamy, S.V.

    1981-06-01

    The objectives of this contract were to carry out a systematic study on the preparation and characterization of rf-sputtered CdTe thin films in order to establish reproducibility of the films with good electrical characteristics and to demonstrate the feasibility of fabricating various types of junctions and ohmic contacts with reproducible characteristics and finally to optimize the most promising solar cell structure in order to achieve an efficiency of 6% or higher. Efforts have been directed to the control of various sputtering parameters in order to obtain good quality films. The structure, crystallographic, compositional and electrical properties of cadmium telluride films sputtered over a wide range of conditions have been evaluated. A series of doping experiments have been carried out using primarily Cd, Te, In, as the n-type dopants and Cu as the p-type dopant. Of these dopants, indium doping provided films with which S.B. junctions can be obtained for further electrical characterization. Use of cadmium overpressure during CdTe:In sputtering has improved the film characteristics. Ion Beam Sputtering was attempted as an alternative technique for film preparation. For lack of time and due to a number of mechanical failures, no significant results could be obtained.

  10. Improved Sensitization of Zinc Oxide Nanorods by Cadmium Telluride Quantum Dots through Charge Induced Hydrophilic Surface Generation

    Directory of Open Access Journals (Sweden)

    Karthik Laxman

    2014-01-01

    Full Text Available This paper reports on UV-mediated enhancement in the sensitization of semiconductor quantum dots (QDs on zinc oxide (ZnO nanorods, improving the charge transfer efficiency across the QD-ZnO interface. The improvement was primarily due to the reduction in the interfacial resistance achieved via the incorporation of UV light induced surface defects on zinc oxide nanorods. The photoinduced defects were characterized by XPS, FTIR, and water contact angle measurements, which demonstrated an increase in the surface defects (oxygen vacancies in the ZnO crystal, leading to an increase in the active sites available for the QD attachment. As a proof of concept, a model cadmium telluride (CdTe QD solar cell was fabricated using the defect engineered ZnO photoelectrodes, which showed ∼10% increase in photovoltage and ∼66% improvement in the photocurrent compared to the defect-free photoelectrodes. The improvement in the photocurrent was mainly attributed to the enhancement in the charge transfer efficiency across the defect rich QD-ZnO interface, which was indicated by the higher quenching of the CdTe QD photoluminescence upon sensitization.

  11. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  12. Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) is one of the best candidate direct conversion material for medical X-ray application because it satisfies the requirements of direct conversion x-ray material such as high atomic absorption, density, bandgap energy, work fuction, and resistivity. With such properties, single crystal CdTe exhibits high quantum efficiency and charge collection efficiency. However, for the development of low-cost large area detector, the study of the improvement of polycrystalline CdTe property is desirable. In this study, in order to improve the properties of polycrystalline CdTe, we produced polycrystalline CdTe with different kinds of raw materials, high purity Cd and Te powder compounds and bulk CdTe compound synthesized from single crystal CdTe. The electric properties including resistivity, x-ray sensitivity, and charge transport properties were investigated. As a result, polycrystalline CdTe exhibited simular level of resistivity and x-ray sensitivity to single crystal CdTe. The carrier transport properties of polycrystalline CdTe showed poorer properties than those of single crystal CdTe due to significant charge trapping. However, the polycrystalline CdTe fabricated with bulk CdTe compound synthesized from single crystal CdTe showed better charge transport properties than the polycrystalline CdTe fabricated with CdTe powder compounds. This is suitable for diagnostic x-ray detectors, especially for digital fluoroscopy

  13. Regulatory policy governing cadmium-telluride photovoltaics: A case study contrasting life cycle management with the precautionary principle

    International Nuclear Information System (INIS)

    Market projections for cadmium-telluride (CdTe) thin-film photovoltaics (PV) are tempered by global environmental policies based on the precautionary principle which restrict electronic products containing cadmium, a known human carcinogen. An alternative to the precautionary principle is life cycle management, which involves manufacturers assuming product stewardship from beginning to end of product life. Both approaches have the aim of minimizing environmental contamination, but attempt to do so in different ways. Restrictions on electronic products containing cadmium by the precautionary principle-based restriction of hazardous substances (RoHS) directive in the European Union and a similar policy in China are presented, relative to their potential impact on CdTe PV. Life cycle environmental risks with respect to potential release of cadmium to the environment are also presented for routine operation of CdTe PV panels, potential catastrophic release of cadmium from a residential fire, and at the end of the product life. There is negligible risk of environmental cadmium contamination during routine operation and insignificant risk during catastrophic exposure events such as fire. At the end of the product life, risks of contamination are minimized by take-back programs that may be paid for by insurance premiums incorporated into the cost of the product. Therefore, policies based on the precautionary principle that could potentially ban the product based on its cadmium content may not be warranted

  14. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs Due to Oxidative Stress in Vitro and in Vivo

    Directory of Open Access Journals (Sweden)

    Ting Zhang

    2015-09-01

    Full Text Available With the applications of quantum dots (QDs expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12. CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2 deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes.

  15. Synthesis, characterization and enhanced thermoelectric performance of structurally ordered cable-like novel polyaniline-bismuth telluride nanocomposite

    Science.gov (United States)

    Chatterjee, Krishanu; Mitra, Mousumi; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2013-05-01

    Bismuth telluride (Bi2Te3) nanorods and polyaniline (PANI) nanoparticles have been synthesized by employing solvothermal and chemical oxidative processes, respectively. Nanocomposites, comprising structurally ordered PANI preferentially grown along the surface of a Bi2Te3 nanorods template, are synthesized using in situ polymerization. X-ray powder diffraction, UV-vis and Raman spectral analysis confirm the highly ordered chain structure of PANI on Bi2Te3 nanorods, leading to a higher extent of doping, higher chain mobility and enhancement of the thermoelectric performance. Above 380 K, the PANI-Bi2Te3 nanocomposite with a core-shell/cable-like structure exhibits a higher thermoelectric power factor than either pure PANI or Bi2Te3. At room temperature the thermal conductivity of the composite is lower than that of its pure constituents, due to selective phonon scattering by the nanointerfaces designed in the PANI-Bi2Te3 nanocable structures. The figure of merit of the nanocomposite at room temperature is comparable to the values reported in the literature for bulk polymer-based composite thermoelectric materials.

  16. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    Science.gov (United States)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  17. SemiSPECT: A small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays

    OpenAIRE

    Kim, Hyunki; Furenlid, Lars R.; Crawford, Michael J.; Wilson, Donald W.; Barber, H. Bradford; Todd E. Peterson; Hunter, William C. J.; Liu, Zhonglin; Woolfenden, James M.; Barrett, Harrison H.

    2006-01-01

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cm × 2.7 cm × ~ 0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64 × 64 pixel array by photolithography. The ASIC is attached to ...

  18. Acetic acid-confined synthesis of uniform three-dimensional (3D) bismuth telluride nanocrystals consisting of few-quintuple-layer nanoplatelets

    KAUST Repository

    Yuan, Qiang

    2011-01-01

    High-selectivity, uniform three-dimensional (3D) flower-like bismuth telluride (Bi2Te3) nanocrystals consisting of few-quintuple-layer nanoplatelets with a thickness down to 4.5 nm were synthesized for the first time by a facile, one-pot polyol method with acetic acid as the structure-director. Micrometre-sized 2D films and honeycomb-like spheres can be obtained using the uniform 3D Bi2Te3 nanocrystals as building blocks. © The Royal Society of Chemistry 2011.

  19. Comparison between stress myocardial perfusion SPECT recorded with cadmium-zinc-telluride and Anger cameras in various study protocols

    Energy Technology Data Exchange (ETDEWEB)

    Verger, Antoine; Karcher, Gilles [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); INSERM U947, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Djaballah, Wassila [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); INSERM U947, Nancy (France); Fourquet, Nicolas [Clinique Pasteur, Toulouse (France); Rouzet, Francois; Le Guludec, Dominique [AP-HP, Hopital Bichat, Department of Nuclear Medicine, Paris (France); INSERM U 773 Inserm and Denis Diderot University, Paris (France); Koehl, Gregoire; Roch, Veronique [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Imbert, Laetitia [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Centre Alexis Vautrin, Department of Radiotherapy, Vandoeuvre (France); Poussier, Sylvain [INSERM U947, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Fay, Renaud [INSERM, Centre d' Investigation Clinique CIC-P 9501, Nancy (France); Marie, Pierre-Yves [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); INSERM U961, Nancy (France); Hopital de Brabois, CHU-Nancy, Medecine Nucleaire, Vandoeuvre-les-Nancy (France)

    2013-03-15

    The results of stress myocardial perfusion SPECT could be enhanced by new cadmium-zinc-telluride (CZT) cameras, although differences compared to the results with conventional Anger cameras remain poorly known for most study protocols. This study was aimed at comparing the results of CZT and Anger SPECT according to various study protocols while taking into account the influence of obesity. The study population, which was from three different institutions equipped with identical CZT cameras, comprised 276 patients referred for study using protocols involving {sup 201}Tl (n = 120) or {sup 99m}Tc-sestamibi injected at low dose at stress ({sup 99m}Tc-Low; stress/rest 1-day protocol; n = 110) or at high dose at stress ({sup 99m}Tc-High; rest/stress 1-day or 2-day protocol; n = 46). Each Anger SPECT scan was followed by a high-speed CZT SPECT scan (2 to 4 min). Agreement rates between CZT and Anger SPECT were good irrespective of the study protocol (for abnormal SPECT, {sup 201}Tl 92 %, {sup 99m}Tc-Low 86 %, {sup 99m}Tc-High 98 %), although quality scores were much higher for CZT SPECT with all study protocols. Overall correlations were high for the extent of myocardial infarction (r = 0.80) and a little lower for ischaemic areas (r = 0.72), the latter being larger on Anger SPECT (p < 0.001). This larger extent was mainly observed in 50 obese patients who were in the {sup 201}Tl or {sup 99m}Tc-Low group and in whom stress myocardial counts were particularly low with Anger SPECT (228 {+-} 101 kcounts) and dramatically enhanced with CZT SPECT (+279 {+-} 251 %). Concordance between the results of CZT and Anger SPECT is good regardless of study protocol and especially when excluding obese patients who have low-count Anger SPECT and for whom myocardial counts are dramatically enhanced on CZT SPECT. (orig.)

  20. Downstream resource utilization following hybrid cardiac imaging with an integrated cadmium-zinc-telluride/64-slice CT device

    International Nuclear Information System (INIS)

    Low yield of invasive coronary angiography and unnecessary coronary interventions have been identified as key cost drivers in cardiology for evaluation of coronary artery disease (CAD). This has fuelled the search for noninvasive techniques providing comprehensive functional and anatomical information on coronary lesions. We have evaluated the impact of implementation of a novel hybrid cadmium-zinc-telluride (CZT)/64-slice CT camera into the daily clinical routine on downstream resource utilization. Sixty-two patients with known or suspected CAD were referred for same-day single-session hybrid evaluation with CZT myocardial perfusion imaging (MPI) and coronary CT angiography (CCTA). Hybrid MPI/CCTA images from the integrated CZT/CT camera served for decision-making towards conservative versus invasive management. Based on the hybrid images patients were classified into those with and those without matched findings. Matched findings were defined as the combination of MPI defect with a stenosis by CCTA in the coronary artery subtending the respective territory. All patients with normal MPI and CCTA as well as those with isolated MPI or CCTA finding or combined but unmatched findings were categorized as ''no match''. All 23 patients with a matched finding underwent invasive coronary angiography and 21 (91%) were revascularized. Of the 39 patients with no match, 5 (13%, p < 0.001 vs matched) underwent catheterization and 3 (8%, p < 0.001 vs matched) were revascularized. Cardiac hybrid imaging in CAD evaluation has a profound impact on patient management and may contribute to optimal downstream resource utilization. (orig.)

  1. Myocardial perfusion imaging with a cadmium zinc telluride-based gamma camera versus invasive fractional flow reserve

    Energy Technology Data Exchange (ETDEWEB)

    Mouden, Mohamed [Isala klinieken, Department of Cardiology, Zwolle (Netherlands); Isala klinieken, Department of Nuclear Medicine, Zwolle (Netherlands); Ottervanger, Jan Paul; Timmer, Jorik R. [Isala klinieken, Department of Cardiology, Zwolle (Netherlands); Knollema, Siert; Reiffers, Stoffer; Oostdijk, Ad H.J.; Jager, Pieter L. [Isala klinieken, Department of Nuclear Medicine, Zwolle (Netherlands); Boer, Menko-Jan de [University Medical Centre Nijmegen, Department of Cardiology, Nijmegen (Netherlands)

    2014-05-15

    Recently introduced ultrafast cardiac SPECT cameras with cadmium zinc telluride-based (CZT) detectors may provide superior image quality allowing faster acquisition with reduced radiation doses. Although the level of concordance between conventional SPECT and invasive fractional flow reserve (FFR) measurement has been studied, that between FFR and CZT-based SPECT is not yet known. Therefore, we aimed to assess the level of concordance between CZT SPECT and FFR in a large patient group with stable coronary artery disease. Both invasive FFR and myocardial perfusion imaging with a CZT-based SPECT camera, using Tc-tetrofosmin as tracer, were performed in 100 patients with stable angina and intermediate grade stenosis on invasive coronary angiography. A cut-off value of <0.75 was used to define abnormal FFR. The mean age of the patients was 64 ± 11 years, and 64 % were men. SPECT demonstrated ischaemia in 31 % of the patients, and 20 % had FFR <0.75. The concordance between CZT SPECT and FFR was 73 % on a per-patient basis and 79 % on a per-vessel basis. Discordant findings were more often seen in older patients and were mainly (19 %) the result of ischaemic SPECT findings in patients with FFR ≥0.75, whereas only 8 % had an abnormal FFR without ischaemia as demonstrated by CZT SPECT. Only 20 - 30 % of patients with intermediate coronary stenoses had significant ischaemia as assessed by CZT SPECT or invasive FFR. CZT SPECT showed a modest degree of concordance with FFR, which is comparable with previous results with conventional SPECT. Further investigations are particularly necessary in patients with normal SPECT and abnormal FFR, especially to determine whether these patients should undergo revascularization. (orig.)

  2. The energetic impact of small Cd{sub x}Te{sub y} clusters on Cadmium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Miao, E-mail: M.Yu2@lboro.ac.uk; Kenny, Steven D., E-mail: S.D.Kenny@lboro.ac.uk

    2015-06-01

    Cadmium Telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to do research on how these defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. Single deposition tests have been performed, to study the behaviour of deposited clusters under different conditions. We deposit a Cd{sub x}Te{sub y} (x,y = 0,1) cluster onto the (100) and (111) Cd and Te terminated surfaces with energies ranging from 1 to 40 eV. More than 1000 simulations have been performed for each of these cases so as to sample the possible deposition positions and to collect sufficient statistics. The results show that Cd atoms are more readily sputtered from the surface than Te atoms and the sticking probability is higher on Te terminated surfaces than Cd terminated surfaces. They also show that increasing the deposition energy typically leads to an increase in the number of atoms sputtered from the system and tends to decrease the number of atoms that sit on or in the surface layer, whilst increasing the number of interstitials observed. - Highlights: • Deposition of Cd, Te and CdTe particles on (100) and (111) Cd and Te surfaces • Cd atoms are more readily sputtered from the surface than Te atoms. • The Te terminated surfaces have a higher sticking probability than the Cd ones. • Higher impact energies imply more sputtered atoms from the surface.

  3. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Qiu, WeiCheng; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2014-11-14

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

  4. Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

    Science.gov (United States)

    Barber, P. G.; Berry, R. F.; Debnam, W. J.; Fripp, A. L.; Woodell, G.; Simchick, R. T.

    1995-01-01

    Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates.

  5. Diaroyl Tellurides: Synthesis, Structure and NBO Analysis of (2-MeOC6H4CO2Te – Comparison with Its Sulfur and Selenium Isologues. The First Observation of [MgBr][R(C=TeO] Salts

    Directory of Open Access Journals (Sweden)

    Fumio Ando

    2009-07-01

    Full Text Available A series of aromatic diacyl tellurides were prepared in moderate to good yields by the reactions of sodium orpotassium arenecarbotelluroates with acyl chlorides in acetonitrile. X-ray structure analyses and theoretical calculations of 2-methoxybenzoic anhydride and bis(2-methoxybenzoyl sulfide, selenide and telluride were carried out. The two 2-MeOC6H4CO moieties of bis(2-methoxybenzoyl telluride are nearly planar and the two methoxy oxygen atoms intramolecularly coordinate to the central tellurium atom from both side of C(11-Te(11-C(22 plane. In contrast, the oxygen and sulfur isologues (2-MeOC6H4CO2E (E = O, S, show that one of the two methoxy oxygen atoms contacts with the oxygen atom of the carbonyl group connected to the same benzene ring. The structure of di(2-methoxybenzoyl selenide which was obtained by MO calculation resembles that of tellurium isologues rather than the corresponding oxygen and sulfur isologues. The reactions of di(aroyl tellurides with Grignard reagents lead to the formation of tellurocarboxylato magnesium complexes [MgBr][R(C=TeO].

  6. Size and temperature dependence of the photoluminescence properties of NIR emitting ternary alloyed mercury cadmium telluride quantum dots

    Science.gov (United States)

    Jagtap, Amardeep M.; Chatterjee, Abhijit; Banerjee, Arup; Babu Pendyala, Naresh; Koteswara Rao, K. S. R.

    2016-04-01

    Exciton-phonon coupling and nonradiative relaxation processes have been investigated in near-infrared (NIR) emitting ternary alloyed mercury cadmium telluride (CdHgTe) quantum dots. Organically capped CdHgTe nanocrystals of sizes varying from 2.5-4.2 nm have been synthesized where emission is in the NIR region of 650-855 nm. Temperature-dependent (15-300 K) photoluminescence (PL) and the decay dynamics of PL at 300 K have been studied to understand the photophysical properties. The PL decay kinetics shows the transition from triexponential to biexponential on increasing the size of the quantom dots (QDs), informing the change in the distribution of the emitting states. The energy gap is found to be following the Varshni relation with a temperature coefficient of 2.1-2.8  ×  10-4 eV K-1. The strength of the electron-phonon coupling, which is reflected in the Huang and Rhys factor S, is found in the range of 1.17-1.68 for QDs with a size of 2.5-4.2 nm. The integrated PL intensity is nearly constant until 50 K, and slowly decreases up to 140 K, beyond which it decreases at a faster rate. The mechanism for PL quenching with temperature is attributed to the presence of nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states. At temperatures of different region (<140 K and 140-300 K), traps of low (13-25 meV) and high (65-140 meV) activation energies seem to be controlling the quenching of the PL emission. The broadening of emission linewidth is found to due to exciton-acoustic phonon scattering and exciton-longitudinal optical (LO) phonon coupling. The exciton-acoustic phonon scattering coefficient is found to be enhanced up to 55 μeV K-1 due to a stronger confinement effect. These findings give insight into understanding the photophysical properties of CdHgTe QDs and pave the way for their possible applications in the fields of NIR photodetectors and other optoelectronic devices.

  7. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    Science.gov (United States)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneeloch, J.; James, R. B.

    2015-06-01

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  8. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Varade, Vaibhav, E-mail: vaibhav.tvarade@gmail.com; Jagtap, Amardeep M.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Anjaneyulu, P. [Department of Physics, Gitam University, Hyderabad 502329 (India)

    2015-06-07

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  9. Investigation of the Internal Electric Field in Cadmium Zinc Telluride Detectors Using the Pockels Effect and the Analysis of Charge Transients

    Science.gov (United States)

    Groza, Michael; Krawczynski, Henic; Garson, Alfred, III; Martin, Jerrad W.; Lee, Kuen; Li, Qiang; Beilicke, Matthias; Cui, Yunlong; Buliga, Vladimir; Guo, Mingsheng; Coca, Constantine; Burger, Arnold

    2010-01-01

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  10. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    International Nuclear Information System (INIS)

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (ΦB ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed

  11. Cadmium telluride module development

    Energy Technology Data Exchange (ETDEWEB)

    Albrigth, S.P.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (USA))

    1991-05-01

    Efficiencies of up to 12.3% have been achieved on small devices. It is expected that 14% efficiency will be exceeded on small devices by improving the fill factors on the present devices in the reasonably near future. Efficiencies in the range 16%-18% are expected to be achieved in the longer term. Modules of 6 W, approximately 929 cm{sup 2} in area with an active area efficiency of over 8% (aperture efficiency of 7.3%) have been achieved. The feasibility of producing 4 ft{sup 2} modules of CdS/CdTe has been shown and requires further efforts in order to realize the overall potentials. The structural integrity of the encapsulation design has been studied by thermal cycling and outdoor life testing. Submodules have been life tested for over 270 days with no observable degradation by the SERI Outdoor Reliability and Life Testing Laboratory. In addition to further optimization of materials and device structure, module output in the future will be increased by an improvement in the uniformity of the deposition process, and by minimizing the loss of active area due to cell division interconnections. Module output is expected to attain 135 W m{sup -2} in the mid 1990s and over 150 W m{sup -2} in the long term. (orig.).

  12. High conductivity composite flip-chip joints and silver-indium bonding to bismuth telluride for high temperature applications

    Science.gov (United States)

    Lin, Wen P.

    Two projects are reported. First, the barrier layer and silver (Ag)-indium (In) transient liquid phase (TLP) bonding for thermoelectric (TE) modules at high temperature were studied, and followed with a survey of Ag microstructure and grain growth kinetics. Second, the high electrical conductivity joint materials bonded by both Ag-AgIn TLP and solid-state bonding processes for small size flip-chip applications were designed. In the first project, barrier and Ag-In TLP bonding layer for TE module at high temperature application were studied. Bismuth telluride (Bi2 Te3) and its alloys are used as materials for a TE module. A barrier/bonding composite was developed to satisfy the TE module for high temperature operation. Titanium (Ti)/ gold (Au) was chosen as the barrier layers and an Ag-rich Ag-In joint was chosen as the bonding layer. An electron-beam evaporated Ti layer was selected as the barrier layer. An Ag-In fluxless TLP bonding process was developed to bond the Bi 2Te3 chips to the alumina substrates for high temperature applications. To prepare for bonding, the Bi2Te3 chips were coated with a Ti/Au barrier layer followed by a Ag layer. The alumina substrates with titanium-tungsten (TiW)/Au were then electroplated with the Ag/In/Ag structure. These Bi2Te3 chips were bonded to alumina substrates at a bonding temperature of 180ºC with a static pressure as low as 100psi. The resulting void-free joint consists of five regions: Ag, (Ag), Ag2In, (Ag), and Ag, where (Ag) is Ag-rich solid solution with In atoms in it and Ag is pure Ag. This joint has a melting temperature higher than 660ºC, and it manages the coefficient of thermal expansion (CTE) mismatch between the Bi2Te3 and alumina substrate. The whole Ti/Au barrier layer and Ag-In bonding composite between Bi 2Te3 and alumina survived after an aging test at 250°C for 200 hours. The Ag-In joint transformed from Ag/(Ag)/Ag2In/(Ag)/Ag to a more reliable (Ag) rich layer after the aging test. Ag thin films were

  13. Silver-rich telluride mineralization at Mount Charlotte and Au-Ag zonation in the giant Golden Mile deposit, Kalgoorlie, Western Australia

    Science.gov (United States)

    Mueller, Andreas G.; Muhling, Janet R.

    2013-03-01

    The gold deposits at Kalgoorlie in the 2.7-Ga Eastern Goldfields Province of the Yilgarn Craton, Western Australia, occur adjacent to the D2 Golden Mile Fault over a strike of 8 km within a district-scale zone marked by porphyry dykes and chloritic alteration. The late Golden Pike Fault separates the older (D2) shear zone system of the Golden Mile (1,500 t Au) in the southeast from the younger (D4) quartz vein stockworks at Mt Charlotte (126 t Au) in the northwest. Both deposits occur in the Golden Mile Dolerite sill and display inner sericite-ankerite alteration and early-stage gold-pyrite mineralization replacing the wall rocks. Late-stage tellurides account for 20 % of the total gold in the first, but for 30 g/t Au) is characterized by Au/Ag = 2.54 and As/Sb = 2.6-30, the latter ratio caused by arsenical pyrite. Golden Mile-type D2 lodes occur northwest of the Golden Pike Fault, but the Hidden Secret orebody, the only telluride bonanza mined (10,815 t at 44 g/t Au), was unusually rich in silver (Au/Ag = 0.12-0.35) due to abundant hessite. We describe another array of silver-rich D2 shear zones which are part of the Golden Mile Fault exposed on the Mt Charlotte mine 22 level. They are filled with crack-seal and pinch-and-swell quartz-carbonate veins and are surrounded by early-stage pyrite + pyrrhotite disseminated in a sericite-ankerite zone more than 6 m wide. Gold grade (0.5-0.8 g/t) varies little across the zone, but Au/Ag (0.37-2.40) and As/Sb (1.54-13.9) increase away from the veins. Late-stage telluride mineralization (23 g/t Au) sampled in one vein has a much lower Au/Ag (0.13) and As/Sb (0.48) and comprises scheelite, pyrite, native gold (830-854 fine), hessite, and minor pyrrhotite, altaite, bournonite, and boulangerite. Assuming 250-300 °C, gold-hessite compositions indicate a fluid log f Te2 of -11.5 to -10, values well below the stability of calaverite. The absence of calaverite and the dominance of hessite in the D2 lodes of the Mt Charlotte area

  14. Characterization of a sub-assembly of 3D position sensitive cadmium zinc telluride detectors and electronics from a sub-millimeter resolution PET system

    Science.gov (United States)

    Abbaszadeh, Shiva; Gu, Yi; Reynolds, Paul D.; Levin, Craig S.

    2016-09-01

    Cadmium zinc telluride (CZT) offers key advantages for small animal positron emission tomography (PET), including high spatial and energy resolution and simple metal deposition for fabrication of very small pixel arrays. Previous studies have investigated the intrinsic spatial, energy, and timing resolution of an individual sub-millimeter resolution CZT detector. In this work we present the first characterization results of a system of these detectors. The 3D position sensitive dual-CZT detector module and readout electronics developed in our lab was scaled up to complete a significant portion of the final PET system. This sub-system was configured as two opposing detection panels containing a total of twelve 40~\\text{mm}× 40~\\text{mm}× 5 mm monolithic CZT crystals for proof of concept. System-level characterization studies, including optimizing the trigger threshold of each channel’s comparators, were performed. 68Ge and 137Cs radioactive isotopes were used to characterize the energy resolution of all 468 anode channels in the sub-system. The mean measured global 511 keV photopeak energy resolution over all anodes was found to be 7.35+/- 1.75 % FWHM after correction for photon interaction depth-dependent signal variation. The measured global time resolution was 37 ns FWHM, a parameter to be further optimized, and the intrinsic spatial resolution was 0.76 mm FWHM.

  15. Simulation and experimental characterization of the point spread function, pixel saturation, and blooming of a mercury cadmium telluride focal plane array.

    Science.gov (United States)

    Soehnel, Grant; Tanbakuchi, Anthony

    2012-11-20

    A custom IR spot scanning experiment was constructed to project subpixel spots on a mercury cadmium telluride focal plane array (FPA). The hardware consists of an FPA in a liquid nitrogen cooled Dewar, high precision motorized stages, a custom aspheric lens, and a 1.55 and 3.39 μm laser source. By controlling the position and intensity of the spot, characterizations of cross talk, saturation, blooming, and (indirectly) the minority carrier lifetime were performed. In addition, a Monte-Carlo-based charge diffusion model was developed to validate experimental data and make predictions. Results show very good agreement between the model and experimental data. Parameters such as wavelength, reverse bias, and operating temperature were found to have little effect on pixel crosstalk in the absorber layer of the detector. Saturation characterizations show that these FPAs, which do not have antiblooming circuitry, exhibit an increase in cross talk due to blooming at ∼39% beyond the flux required for analog saturation. PMID:23207309

  16. Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system.

    Science.gov (United States)

    Yang, Clayton S-C; Brown, Eiei; Kumi-Barimah, Eric; Hommerich, Uwe; Jin, Feng; Jia, Yingqing; Trivedi, Sudhir; D'souza, Arvind I; Decuir, Eric A; Wijewarnasuriya, Priyalal S; Samuels, Alan C

    2015-11-20

    In this work, we develop a mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5  s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared (LWIR) region (∼5.6-10  μm). Similar to the conventional UV-Vis LIBS, a broadband emission spectrum of condensed phase samples covering the whole 5.6-10 μm region can be acquired from just a single laser-induced microplasma or averaging a few single laser-induced microplasmas. Atomic and molecular signature emission spectra of solid inorganic and organic tablets and thin liquid films deposited on a rough asphalt surface are observed. This setup is capable of rapidly probing samples "as is" without the need of elaborate sample preparation and also offers the possibility of a simultaneous UV-Vis and LWIR LIBS measurement.

  17. High-efficiency cadmium and zinc telluride based thin-film solar cells: Annual report, June 1, 1987--May 31, 1988

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel. S.

    1989-04-01

    This report contains results of research on high-efficiency cadmium and zinc telluride based thin-film solar cells from June 1987 to May 1988. CdTe and CdZnTe and CdTe and CdMnTe films were grown on CdS/SnO/sub 2//glass substrates by molecular beam epitaxy and metal-organic chemical vapor deposition, respectively. As-grown films were characterized by x-ray diffraction, surface photovoltage spectroscopy, and infrared, Raman, and Auger electron spectroscopy, among others, for composition, bulk uniformity, thickness, and film and interface quality. Single-crystal films were grown simultaneously to understand the growth conditions of the polycrystalline films. Cell efficiencies ranging from 6.0% to 6.7% were achieved with the Cd/sub 0.95/Mn/sub 0.05/Te film employing the glass/SnO/sub 2//CdS/CdMnTe/ZnTe/Au front-wall solar cell structure. Cells fabricated by using CdZnTe films yielded efficiencies from 3.0% to 3.6%. 12 refs., 32 figs., 7 tabs.

  18. Nuclear myocardial perfusion imaging with a novel cadmium-zinc-telluride detector SPECT/CT device: first validation versus invasive coronary angiography

    International Nuclear Information System (INIS)

    We evaluated the diagnostic accuracy of attenuation corrected nuclear myocardial perfusion imaging (MPI) with a novel hybrid single photon emission computed tomography (SPECT)/CT device consisting of an ultrafast dedicated cardiac gamma camera with cadmium-zinc-telluride (CZT) solid-state semiconductor detectors integrated onto a multislice CT scanner to detect coronary artery disease (CAD). Invasive coronary angiography served as the standard of reference. The study population included 66 patients (79% men; mean age 63 ± 11 years) who underwent 1-day 99mTc-tetrofosmin pharmacological stress/rest examination and angiography within 3 months. Sensitivity, specificity, positive predictive value (PPV) and negative predictive value (NPV) as well as accuracy of the CT X-ray based attenuation corrected CZT MPI for detection of CAD (≥50% luminal narrowing) was calculated on a per-patient basis. The prevalence of angiographic CAD in the study population was 82%. Sensitivity, specificity, PPV, NPV and accuracy were 87, 67, 92, 53 and 83%, respectively. In this first report on CZT SPECT/CT MPI comparison versus angiography we confirm a high accuracy for detection of angiographically documented CAD. (orig.)

  19. Apoptosis Induction and Imaging of Cadmium-Telluride Quantum Dots with Wogonin in Multidrug-Resistant Leukemia K562/A02 Cell.

    Science.gov (United States)

    Huang, Bin; Liu, Hongyi; Huang, Dongliang; Mao, Xuhua; Hu, Xianyun; Jiang, Caiyun; Pu, Maomao; Zhang, Gen; Zeng, Xin

    2016-03-01

    Wogonin (5,7-dihydroxy-8-methoxyflavone) is one of the active components of flavonoids isolated from Scutellariae radix and possesses antitumor effect against leukemia. Cadmium-telluride quantum dots (CdTe-QDs) are a kind of nanoparticles with great potential in functioning as an efficient drug delivery vector in biomedical research. In this study, we investigated the synergistic effect of CdTe-QDs with Wogonin on the induction of apoptosis using drug-resistant human leukemia KA cells. Flow cytometry analysis, assay of morphology under electron microscope, quantitative analysis of tumor volume and micro-CT imaging demonstrated that compared with that by pure CdTe-QDs or wogonin, the apoptosis rate increased sharply when treated wirh CdTe-QDs together with wogonin on KA cells. These results proved that the nanocomposites readily overcame the barrier of drug-resistance and provoked cell apoptosis in vitro and in vivo by facilitating the interaction between wogonin and KA cells. As known to all, it is an inevitable tendency that new effective therapies will take the place of conventional chemotherapy and radiotherapy presenting significant disadvantages. According to this article, CdTe-QD combined with wogonin is a possible alternative for some cancer treatments. PMID:27455661

  20. Linearly polarized, Q-switched, erbium-doped fiber laser incorporating a bulk-structured bismuth telluride/polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Lee, Jinho; Lee, Junsu; Koo, Joonhoi; Chung, Hojai; Lee, Ju Han

    2016-07-01

    We experimentally demonstrate a linearly polarized, passively Q-switched, erbium (Er)-doped fiber laser using a saturable absorber (SA) based on a composite consisting of a bulk-structured bismuth telluride (Bi2Te3) topological insulator (TI) and polyvinyl alcohol (PVA). The SA was constructed on a polarization maintaining (PM) fiber ferrule platform, which had a sandwich structure. Its saturation intensity and modulation depth were measured to be ˜ and ˜4.1%, respectively. Using the prepared Bi2Te3/PVA SA in a PM Er-doped fiber ring laser, stable Q-switched pulses with a degree of polarization of ˜98.6% and an azimuth angle of ˜-0.34 deg were demonstrated. The minimum pulse width was measured to be ˜1.58 μs at a repetition rate of 47.1 kHz. This experimental demonstration verifies that a thin film based on a bulk-structured Bi2Te3 TI can fit into a sandwich-structured SA based on PM fiber ferrules.

  1. First principles phase transition, elastic properties and electronic structure calculations for cadmium telluride under induced pressure: density functional theory, LDA, GGA and modified Becke-Johnson potential

    Science.gov (United States)

    Kabita, Kh; Maibam, Jameson; Indrajit Sharma, B.; Brojen Singh, R. K.; Thapa, R. K.

    2016-01-01

    We report first principles phase transition, elastic properties and electronic structure for cadmium telluride (CdTe) under induced pressure in the light of density functional theory using the local density approximation (LDA), generalised gradient approximation (GGA) and modified Becke-Johnson (mBJ) potential. The structural phase transition of CdTe from a zinc blende (ZB) to a rock salt (RS) structure within the LDA calculation is 2.2 GPa while that within GGA is found to be at 4 GPa pressure with a volume collapse of 20.9%. The elastic constants and parameters (Zener anisotropy factor, Shear modulus, Poisson’s ratio, Young’s modulus, Kleinmann parameter and Debye’s temperature) of CdTe at different pressures of both the phases have been calculated. The band diagram of the CdTe ZB structure shows a direct band gap of 1.46 eV as predicted by mBJ calculation which gives better results in close agreement with experimental results as compared to LDA and GGA. An increase in the band gap of the CdTe ZB phase is predicted under induced pressure while the metallic nature is retained in the CdTe RS phase.

  2. Solution synthesis of telluride-based nano-barbell structures coated with PEDOT:PSS for spray-printed thermoelectric generators

    Science.gov (United States)

    Bae, Eun Jin; Kang, Young Hun; Jang, Kwang-Suk; Lee, Changjin; Cho, Song Yun

    2016-05-01

    Solution-processable telluride-based heterostructures coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Te-Bi2Te3/PEDOT:PSS) were synthesized through a solution-phase reaction at low temperatures. The water-based synthesis yielded PEDOT:PSS-coated Te-Bi2Te3 nano-barbell structures with a high Seebeck coefficient that can be stably dispersed in water. These hybrid solutions were deposited onto a substrate by the spray-printing method to prepare thermoelectric generators. The thermoelectric properties of the Te-Bi2Te3/PEDOT:PSS hybrid films were significantly enhanced by a simple acid treatment due to the increased electrical conductivity, and the power factor of those materials can be effectively tuned over a wide range depending on the acid concentration of the treatment. The power factors of the synthesized Te-Bi2Te3/PEDOT:PSS hybrids were optimized to 60.05 μW m-1 K-2 with a Seebeck coefficient of 93.63 μV K-1 and an electrical conductivity of 69.99 S cm-1. The flexible thermoelectric generator fabricated by spray-printing Te-Bi2Te3/PEDOT:PSS hybrid solutions showed an open-circuit voltage of 1.54 mV with six legs at ΔT = 10 °C. This approach presents the potential for realizing printing-processable hybrid thermoelectric materials for application in flexible thermoelectric generators.Solution-processable telluride-based heterostructures coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Te-Bi2Te3/PEDOT:PSS) were synthesized through a solution-phase reaction at low temperatures. The water-based synthesis yielded PEDOT:PSS-coated Te-Bi2Te3 nano-barbell structures with a high Seebeck coefficient that can be stably dispersed in water. These hybrid solutions were deposited onto a substrate by the spray-printing method to prepare thermoelectric generators. The thermoelectric properties of the Te-Bi2Te3/PEDOT:PSS hybrid films were significantly enhanced by a simple acid treatment due to the increased electrical conductivity, and

  3. Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

    Science.gov (United States)

    Tian, Jin-Xiu; Zeng, Guang-Gen; He, Xu-Lin; Zhang, Jing-Quan; Wu, Li-Li; Li, Wei; Li, Bing; Wang, Wen-Wu; Feng, Liang-Huan

    2014-04-01

    The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta). It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo), diode ideal factor (A), quantum efficiency, carrier concentration and the depletion layer width. The decline in short-circuit current was very large and the efficiency of solar cells decreased obviously after irradiation. Reverse saturation current density increased, which indicates that p-n junction characteristics of solar cells were damaged, and diode ideal factor was almost the same, so current transport mechanism of solar cells has not changed. Quantum efficiency curves proved that the damage of solar cells' p-n junction influenced the collection of photo-generated carriers. Irradiation made carrier concentration reduce to 40.6%. The analyses have shown that. A new defect was induced by electron irradiation, whose position is close to 0.58 eV above the valence band in the forbidden band, and capture cross section is 1.78 x 10(-16) cm2. These results indicate that irradiation influences the generation of photo-generated carriers, increases the risk of the carrier recombination and the reverse dark current, and eventually makes the short-circuit current of solar cells decay. PMID:25007593

  4. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity.

  5. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity. PMID:27494313

  6. Studies on focal alveolar bone healing with technetium (Tc)-99m labeled methylene diphosphonate and gold-collimated cadmium telluride probe

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchimochi, M.; Hosain, F.; Engelke, W.; Zeichner, S.J.; Ruttimann, U.E.; Webber, R.L. (National Institute of Dental Research, Bethesda, MD (USA))

    1991-01-01

    The benefit of using a collimator for a miniaturized cadmium telluride probe was evaluated by monitoring the bone-healing processes for 13 weeks after the induction of small iatrogenic alveolar bone lesions in one side of the mandible in beagles. Technetium (Tc)-99m labeled methylene diphosphonate (200 to 300 MBq, 5.1 to 8.1 mCi, in a solution of 0.5 to 1 ml, intravenously) was used as a bone-seeking radiopharmaceutical. The radioactivity over the bone lesion (L) and the contralateral normal site (C) in the mandible were measured between 1.5 and 2 hours after injection of the tracer, and the activity ratio L/C served as an index of relative bone uptake. A study of six dogs revealed that the healing response to a hemispheric bone defect of 2 mm diameter in the cortical bone could not be detected by an uncollimated probe, and in a repeated study in two dogs the use of a gold collimator (5 mm in diameter, 5 mm in length) did not increase the L/C ratio significantly. A second study in six dogs with 5 mm lesions showed that although systematic trends in the time courses of the L/C ratio obtained both with and without the collimator could be demonstrated, the L/C ratio of collimated versus uncollimated measurements was significantly (p less than 0.005) increased. In three of the latter six dogs, abscesses developed after 9 weeks, leading to a second increase (p less than 0.05) of the L/C ratio with collimation compared with the noninflammation group; without collimation no significant (p greater than 0.15) difference between the two groups could be demonstrated.

  7. Mechanical properties of bismuth telluride (Bi{sub 2}Te{sub 3}) processed by high pressure torsion (HPT); Propiedades mecanicas del telururo de bismuto (Bi{sub 2}Te{sub 3}) procesado mediante torsion bajo alta presion (HPT)

    Energy Technology Data Exchange (ETDEWEB)

    Santamaria, J. A.; Alkorta, J.; Gil Sevillano, J.

    2013-06-01

    Bismuth telluride, Bi{sub 2}Te{sub 3}, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi{sub 2}Te{sub 3} is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric figure of merit results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa) using high pressure torsion (HPT, one turn at room temperature). Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation. (Author) 11 refs.

  8. Nanotemplated lead telluride thin films

    OpenAIRE

    Li, Xiaohong; Nandhakumar, Iris S.; Attard, George S.; Markham, Matthew L.; Smith, David C.; Baumberg, Jeremy J.

    2009-01-01

    Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV–VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (100) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringenc...

  9. Oxidation-reduction properties of americium, curium, berkelium, californium, einsteinium and fermium, and thermodynamic consequences for the 5f series

    International Nuclear Information System (INIS)

    The amalgamation of 5f elements from Am to Fm has been studied by using 241Am, 244Cm, 249Bk, 249Cf, 252Cf, 253Es, 254Es, 252Fm and 255Fm with two electrochemical methods, radiocoulometry and radiopolarography, perfectly adapted to investigate extremely diluted solutions when the concentration of electroactive species is as low as 10-16M. The theory of radiocoulometry has been developed in the general cases of reversible and irreversible electrode process. It has been used to interpret the experimental data on the kinetic curves of amalgamation, and to estimate the standard rate constant of the electrode process in complexing medium (citric). On the other hand the radiopolarographic method has been applied to study the mechanism of reduction at the dropping mercury electrode of cations M3+ in aqueous medium to the metal M with formation of amalgam. The results are exploited into two directions: 1- Acquisition of some data concerning the oxidation-reduction properties of elements from Am to Fm. Therefore the standard electrode E0 [M(III-0)] potentials for Bk, Cf and Es, and the standard electrode E0 [M(II-0)] potential for Fm are estimated and the relative stability of each oxidation state (from II to VII) of 5f elements is discussed; 2- Acquisition of unknown thermodynamic data on transcalifornium elements. Correlations between 4f and 5f elements are precised and some divergences appear for the second half of 4f and 5f series (i.e. for 65<=Z<=71 and 97<=Z<=103)

  10. 133Xenon absorption into rubber-protected portable cadmium telluride (CdTe(Cl)) detectors invalidating the 133Xenon washout method for measurement of cutaneous and subcutaneous blood flow rates in man.

    Science.gov (United States)

    Sørensen, J L

    1991-01-01

    The importance of 133Xenon absorption into rubber detector caps during cutaneous and subcutaneous blood flow measurement was investigated in 46 experiments involving 38 persons. 133Xenon was administered atraumatically. Cutaneous and subcutaneous washout rates were registered by portable Cadmium Telluride detectors without rubber caps, with rubber caps, and with rubber caps with Mylar membranes interposed between the rubber and the tissue investigated. No difference in rate constants obtained by means of various detector types was detected. The accumulation of 133Xenon in the rubber caps was found to take place within the first few minutes after the detectors had been brought into position. The 133Xenon then diffused back into the tissue exhibiting a great variation regarding rate constants. The 133Xenon diffused form rubber into air and perfused tissue tracing a monoexponential course; and again the rate constants would vary considerably. No correlation was found between elimination rates obtained with detectors with and without 133Xenon polluted caps, and no way of correcting for the 133Xenon content in the rubber caps was found. Relative changes in rate constants could still be recognized, but absolute values were not obtainable. PMID:1789123

  11. Demonstration of enhanced iodine K-edge imaging using an energy-dispersive X-ray computed tomography system with a 25 mm/s-scan linear cadmium telluride detector and a single comparator

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Eiichi, E-mail: dresato@iwate-med.ac.jp [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Oda, Yasuyuki [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Abudurexiti, Abulajiang [Faculty of Software and Information Science, Iwate Prefectural University, 152-52 Sugo, Takizawa, Iwate 020-0193 (Japan); Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya [3rd Department of Surgery, Toho University School of Medicine, 2-17-6 Ohashi, Meguro-ku, Tokyo 153-8515 (Japan); Sato, Shigehiro [Department of Microbiology, School of Medicine, Iwate Medical University, 19-1 Uchimaru, Morioka, Iwate 020-0023 (Japan); Ogawa, Akira [Department of Neurosurgery, School of Medicine, Iwate Medical University, 19-1 Uchimaru, Morioka, Iwate 020-0023 (Japan); Onagawa, Jun [Department of Electronics, Faculty of Engineering, Tohoku Gakuin University, 1-13-1 Chuo, Tagajo, Miyagi 985-8537 (Japan)

    2012-05-15

    An energy-dispersive (ED) X-ray computed tomography (CT) system is useful for carrying out monochromatic imaging. To perform enhanced iodine K-edge CT, we developed an oscillation linear cadmium telluride (CdTe) detector with a scan velocity of 25 mm/s and an energy resolution of 1.2 keV. CT is performed by repeated linear scans and rotations of an object. Penetrating X-ray photons from the object are detected by the CdTe detector, and event signals of X-ray photons are produced using charge-sensitive and shaping amplifiers. The lower photon energy is determined by a comparator device, and the maximum photon energy of 60 keV corresponds to the tube voltage. Rectangular-shaped comparator outputs are counted by a counter card. In the ED-CT, tube voltage and current were 60 kV and 0.30 mA, respectively, and X-ray intensity was 14.8 {mu}Gy/s at 1.0 m from the source at a tube voltage of 60 kV. Demonstration of enhanced iodine K-edge X-ray CT for cancer diagnosis was carried out by selecting photons with energies ranging from 34 to 60 keV. - Highlights: Black-Right-Pointing-Pointer We developed an energy-dispersive X-ray CT system with a 25 mm/s-scan CdTe detector. Black-Right-Pointing-Pointer CT is performed by repeated linear scans and rotations of an object. Black-Right-Pointing-Pointer Lower photon energy is determined by a comparator device. Black-Right-Pointing-Pointer Spatial resolutions were 0.5 Multiplication-Sign 0.5 mm{sup 2}. Black-Right-Pointing-Pointer Iodine K-edge CT was carried out by selecting photons from 34 to 60 keV.

  12. Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

    International Nuclear Information System (INIS)

    Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

  13. Cesium-Telluride Photocathode No. 166

    CERN Document Server

    Barbiero, A; Elsener, K; Losito, R; CERN. Geneva. AB Department

    2007-01-01

    In the CERN photoemission laboratory, a Cs2 Te photocathode has been produced in December 2006. The co-evaporation of Cs and Te onto a copper substrate is observed with two quartz oscillator thickness monitors. The calibration of these monitors and the resulting Cs and Te layer thicknesses are described, and the calculated stoichiometric ratio of the sample is given. The quantum efficiency of cathode No. 166, measured using the cathode in a DC gun, has been found to be 6.2%.

  14. Photorefractive properties of doped cadmium telluride

    Science.gov (United States)

    Bylsma, R. B.; Bridenbaugh, P. M.; Olson, D. H.; Glass, A. M.

    1987-09-01

    The first study of the photorefractive properties of doped CdTe has demonstrated high sensitivity for optical processing applications. Of the binary II-VI and III-V semiconductors, CdTe has the highest electro-optic coefficient r41 in the infrared, some three times larger than that of GaAs and InP. Deep levels introduced into CdTe exhibit appropriate absorption and photoconductivity at 1.06 μm by doping with V and Ti impurities. Photorefractive beam coupling experiments in CdTe:V gave small signal gains of 0.7 cm-1, and diffraction efficiencies with no applied electrical field of 0.7%. Thus, CdTe appears to be superior to previously studied III-V semiconductors, in the near-infrared spectrum. Optimization of doping and trap densities is expected to result in gain which exceeds the absorption loss, thereby allowing phase conjugation with infrared injection lasers.

  15. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  16. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  17. Growth and characterization of bismuth telluride nanowires

    International Nuclear Information System (INIS)

    Polycrystalline Bi2Te3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi2Te3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  18. Growth and characterization of bismuth telluride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  19. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  20. Transport properties of silver telluride in the solid and liquid states; Etude des proprietes de transport dans le tellurure d'argent Ag{sub 2}Te aux hautes temperatures a l'etat solide et a l'etat liquide

    Energy Technology Data Exchange (ETDEWEB)

    Pham, N.T. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1969-01-01

    Measurements of the electrical resistivity, Hall coefficient and thermoelectric power have been carried out for silver telluride over a large temperature range including both solid and liquid states. The analysis of the experimental data shows that in the solid state the transport properties are governed by an ambipolar process with an electron mobility much higher than the hole mobility ({mu}{sub n} = 10*{mu}{sub p}). It is found that the temperature dependence of the electron mobility can be represented by a T{sup -3} law. Deviations from the stoichiometric composition Ag{sub 2}Te have been studied. For all specimens, melting is accompanied by discontinuous variations in the transport properties. Above the melting point, the magnitude of the measured parameters and their temperature dependence show that liquid silver telluride behaves as a semiconductor. The contribution of Ag{sup +} ions to transport phenomena is suggested to account for the behaviour of the electrical properties. Experimental data have been analysed in terms of conventional theories. (author) [French] Les mesures de la resistivite electrique, du coefficient de Hall et du pouvoir thermoelectrique ont ete effectuees sur le tellurure d'argent dans un large domaine de temperature couvrant l'etat solide et l'etat liquide. L'analyse des resultats experimentaux obtenus a l'etat solide montre que les proprietes de transport sont gouvernees par le processus ambipolaire avec une mobilite des electrons beaucoup plus grande que celle des trous ({mu}{sub n} 10*{mu}{sub p}). On trouve que la mobilite des electrons varie avec la temperature suivant la loi T{sup -3}. Les ecarts de la composition stoechiometrique Ag{sub 2}Te ont ete etudies. Pour tous les echantillons, la fusion est caracterisee par des variations discontinues des proprietes de transport. Au dessus du point de fusion, la grandeur des parametres mesures ainsi que leur variation avec la temperature montrent que le

  1. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  2. Mercury telluride as an ohmic contact to efficient thin film cadmium telluride solar cells

    International Nuclear Information System (INIS)

    The formation of a stable, reproducible, low-resistance contact to p-CdTe thin films is a major problem in the fabrication of efficient solar cells. Two general approaches to this problem are: the formation of a region of high carrier concentration under the contact to reduce the contact resistance, and the use of contact materials with a higher work function than p-CdTe. The second approach is investigated in this work using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe was carried out by the direct combination of the elemental vapors in a gas flow system and by the close-spaced sublimation, (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance has been found to be very similar to the Au/p-CdTe contact resistance

  3. Characteristics of some selenides and the physical-chemical condition of selenides and tellurides in the Jílové gold metallogenic concentration area,Czech Republic%捷克Jílové金矿集区中硒矿物的特征与硒化物-碲化物的形成物理化学条件

    Institute of Scientific and Technical Information of China (English)

    刘家军; 杨隆勃; 翟德高; 吴杰

    2013-01-01

    the Middle Ages. The important gold de-posits include the Pepf, Bohuliby, Radlik and Rotlev. They exist mainly in the Upper Proterozoic volcano-sed-iment of the Stechovice Group and the granodiorite of the Central Bohemian Pluton. There are three types of gold mineralization in the Jilovegold metallogenic concentration area: veins, stockworks, impregnation. Up to now, more than 70 minerals have been identified. They include not only sulfides and sulfosalts of Cu,Pb,Zn, Fe, As,Mo,Bi, Hg, Au, and Ag-bearing minerals,a variety of oxide,hydroxide, sulfate,carbonate, tungstate and silicate minerals but also telluride,halide, and native metals. Examination of ores by optical microscope, electron probe,X-ray surface scanning,has revealed that there are some selenides in the deposits. The diversity of mineral species in the ores and the occurrence of visible native gold minerals are the outstanding features of the gold deposit. Generally speaking, the more robust correlation is with the chalcogenidic environment and, in most cases, the lesser correlation with specific minerals. Therefore, the highly enrichment of selenide and telluride in the deposits is very characteristic, reflecting a specific condition of their formation. In the early stage of mineralization, f(Se2), f(Te2) and f(O2) are relatively low while f(S2) is relatively high, with f(S2)/f(Se2)>1 and f(S2>/f(Te2)>1. In this circumstance, sulfur would be precipitated as sulfides while selenium and tellurium would tend to be trapped in the sulfides as isomorphous admixture. Therefore, the min-erals are characterized by the association of pyrite, marcasite, pyrrhotite, arsenopyrite, chalcopyrite, galenite, sphalerite and so on. In the late stage of mineralization, f(Se2), f(Te2), and f(O2) are relatively high while f(S2) is relatively low, with f(S2)/f(Se2)<1 and f(S2)/f(Te2)<1. In the main stage of mineralization, f(Se2 )/f(S2), f(Te2 )/f(S2) and f(O2) would increase with the precipitation of sulfides, which would

  4. A portable cadmium telluride multidetector probe for cardiac function monitoring

    CERN Document Server

    Arntz, Y; Dumitresco, B; Eclancher, B; Prat, V

    1999-01-01

    A new nuclear stethoscope based on a matrix of small CdTe semiconductor detectors has been developed for studying the cardiac performance by gamma ventriculography at the equilibrium, in rest and stress conditions, in the early and recovery phases of the coronary disease and to follow the long-term therapy. The light-weight probe consists of an array of 64 detectors 5x5x2 mm grouped in 16 independent units in a lead shielded aluminum box including 16 preamplifiers. The probe is connected to an electronic box containing DC power supply, 16 channel amplifiers, discriminators and counters, two analog-triggering ECG channels, and interface to a PC. The left ventricle activity is, preferentially, detected by using a low-resolution matching convergent collimator. A physical evaluation of the probe has been performed, both with static tests and dynamically with a hydraulic home-built model of beating heart ventricle paced by a rhythm simulator. The sum of the 16 detectors activity provided a radiocardiogram (RCG) wh...

  5. Cadmium telluride leaching behavior: Discussion of Zeng et al. (2015).

    Science.gov (United States)

    Sinha, Parikhit

    2015-11-01

    Zeng et al. (2015) evaluate the leaching behavior and surface chemistry of II-VI semiconductor materials, CdTe and CdSe, in response to pH and O2. Under agitation in acidic and aerobic conditions, the authors found approximately 3.6%-6.4% (w/w) solubility of Cd content in CdTe in the Toxicity Characteristic Leaching Procedure (TCLP), Waste Extraction Test (WET), and dissolution test, with lower solubility (0.56-0.58%) under agitation in acidic and anoxic conditions. This range is comparable with prior long-term transformation and dissolution testing and bio-elution testing of CdTe (2.3%-4.1% w/w solubility of Cd content in CdTe). The implications for potential leaching behavior of CdTe-containing devices require further data. Since CdTe PV modules contain approximately 0.05% Cd content by mass, the starting Cd content in the evaluation of CdTe-containing devices would be lower by three orders of magnitude than the starting Cd content in the authors' study, and leaching potential would be further limited by the monolithic glass-adhesive laminate-glass structure of the device that encapsulates the semiconductor material. Experimental evaluation of leaching potential of CdTe PV modules crushed by landfill compactor has been conducted, with results of TCLP and WET tests on the crushed material below regulatory limits for Cd. CdTe PV recycling technology has been in commercial operation since 2005 with high yields for semiconductor (95%) and glass (90%) recovery. PMID:26320011

  6. Analysis Of Transport Properties of Mechanically Alloyed Lead Tin Telluride

    Science.gov (United States)

    Krishna, Rajalakshmi

    The work described in this thesis had two objectives. The first objective was to develop a physically based computational model that could be used to predict the electronic conductivity, Seebeck coefficient, and thermal conductivity of Pb1-xSnxTe alloys over the 400 K to 700 K temperature as a function of Sn content and doping level. The second objective was to determine how the secondary phase inclusions observed in Pb1-xSn xTe alloys made by consolidating mechanically alloyed elemental powders impact the ability of the material to harvest waste heat and generate electricity in the 400 K to 700 K temperature range. The motivation for this work was that though the promise of this alloy as an unusually efficient thermoelectric power generator material in the 400 K to 700 K range had been demonstrated in the literature, methods to reproducibly control and subsequently optimize the materials thermoelectric figure of merit remain elusive. Mechanical alloying, though not typically used to fabricate these alloys, is a potential method for cost-effectively engineering these properties. Given that there are deviations from crystalline perfection in mechanically alloyed material such as secondary phase inclusions, the question arises as to whether these defects are detrimental to thermoelectric function or alternatively, whether they enhance thermoelectric function of the alloy. The hypothesis formed at the onset of this work was that the small secondary phase SnO2inclusions observed to be present in the mechanically alloyed Pb1-xSnxTe would increase the thermoelectric figure of merit of the material over the temperature range of interest. It was proposed that the increase in the figure of merit would arise because the inclusions in the material would not reduce the electrical conductivity to as great an extent as the thermal conductivity. If this were to be true, then the experimentally measured electronic conductivity in mechanically alloyed Pb1-xSnxTe alloys that have these inclusions would not be less than that expected in alloys without these inclusions while the portion of the thermal conductivity that is not due to charge carriers (the lattice thermal conductivity) would be less than what would be expected from alloys that do not have these inclusions. Furthermore, it would be possible to approximate the observed changes in the electrical and thermal transport properties using existing physical models for the scattering of electrons and phonons by small inclusions. The approach taken to investigate this hypothesis was to first experimentally characterize the mobile carrier concentration at room temperature along with the extent and type of secondary phase inclusions present in a series of three mechanically alloyed Pb1-xSnxTe alloys with different Sn content. Second, the physically based computational model was developed. This model was used to determine what the electronic conductivity, Seebeck coefficient, total thermal conductivity, and the portion of the thermal conductivity not due to mobile charge carriers would be in these particular Pb1-x SnxTe alloys if there were to be no secondary phase inclusions. Third, the electronic conductivity, Seebeck coecient and total thermal conductivity was experimentally measured for these three alloys with inclusions present at elevated temperatures. The model predictions for electrical conductivity and Seebeck coefficient were directly compared to the experimental elevated temperature electrical transport measurements. The computational model was then used to extract the lattice thermal conductivity from the experimentally measured total thermal conductivity. This lattice thermal conductivity was then compared to what would be expected from the alloys in the absence of secondary phase inclusions. Secondary phase inclusions were determined by X-ray diraction analysis to be present in all three alloys to a varying extent. The inclusions were found not to significantly degrade electrical conductivity at temperatures above 400 K in these alloys, though they do dramatically impact electronic mobility at room temperature. It is shown that, at temperatures above 400 K, electrons are scattered predominantly by optical and acoustical phonons rather than by an alloy scattering mechanism or the inclusions. The experimental electrical conductivity and Seebeck coefficient data at elevated temperatures were found to be within 10 % of what would be expected for material without inclusions. The inclusions were not found to reduce the lattice thermal conductivity at elevated temperatures. The experimentally measured thermal conductivity data was found to be consistent with the lattice thermal conductivity that would arise due to two scattering processes: Phonon-phonon scattering (Umklapp scattering) and the scattering of phonons by the disorder induced by the formation of a PbTe-SnTe solid solution (alloy scattering). (Abstract shortened by UMI.)

  7. Combustion synthesis and characterization of uranium and thorium tellurides

    International Nuclear Information System (INIS)

    This report describes an investigation of the chemical systems uranium-tellurium and thorium-tellurium. A novel synthesis technique, combustion synthesis, which uses the exothermic heat of reaction rather than externally supplied heat, was utilized to form the phases UTe, U3Te4, and UTe2 in the U-Te system and the phases ThTe, Th2Te3, and ThTe2 in the Th-Te system from reactions of the type U/sub x/ + Te/sub y/ = U/sub x/Te/sub y/. With this synthetic method, U-Te and Th-Te products could be formed in a matter of seconds, and the purity of the products was often greater than that of the starting materials used. Control over final product stoichiometry was found to be very difficult. The product phase distribution observed in combustion products, as determined by x-ray diffraction, electron microprobe, and optical metallographic methods, was found to be spatially complex. Lattice constants were calculated from x-ray diffraction patterns for the compounds UTe, U3Te4, and ThTe. SOLGASMIX thermodynamic equilibrium calculations were performed using available and estimated thermodynamic data on the system U-Te-O in an attempt to understand the products formed by combustion. Adiabatic combustion reaction temperatures for specific U-Te and Th-Te reactions were also calculated utilizing available and estimated thermodynamic data. 71 refs., 31 figs., 15 tabs

  8. Acceptors in cadmium telluride. Identification and electronic structure

    International Nuclear Information System (INIS)

    It is shown that electronic properties of CdTe are determined by impurities more than by intrinsic defects like vacancies or interstitials in Cd or Te contrary to classical theories. These results are based on annealing, diffusion, implantation and electron irradiation at 4 K. Centers appearing in treated samples are accurately identified by photoluminescence, cathodoluminescence infra-red absorption, electrical measurements and magneto-optic properties. Acceptors identified are Li, Na, Cu, Ag and Au impurities in Cd and N, P and As in Te. Energy levels of all acceptors and fine structure of excitons are determined

  9. Polycrystalline cadmium telluride 3n-i-p solar cell

    Science.gov (United States)

    Meyers, P. V.

    1989-06-01

    The CdS/CdTe/ZnTe n-i-p solar cell and its ternary relatives have the potential to meet Department of Energy cost, efficiency, and stability goals. This report describes results of a continuing program to achieve these goals. A record-breaking efficiency of 11 percent has been demonstrated and verified at the Solar Energy Research Institute (SERI). Stability testing for 3000 hours indicates that the n-i-p structure is stable. Improving the short-circuit current by substituting Cd/sub x/Zn/sub 1-x/S for CdS has been successful and has produced 8 plus percent efficient cells with 2.6 eV windows using improved pyrolysis equipment. Transparent n-i-p devices have been produced with a SERI-verified efficiency of 9.4 percent . Collaborations with researchers at the Georgia Institute of Technology, the Institute of Energy Conversion, and Jet Propulsion Laboratory have resulted in jointly produced n-i-p cells. Cells produced by molecular beam epitaxy and metal organic chemical vapor deposition had efficiencies greater than 9 percent; cells produced by thermal vacuum evaporation had efficiencies greater than 7 percent.

  10. Laser-induced grating spectroscopy of cadmium telluride

    Science.gov (United States)

    Petrovic, Mark S.; Suchocki, Andrzej; Powell, Richard C.; Cantwell, Gene; Aldridge, Jeff

    1989-08-01

    Laser-induced transient gratings produced by two-photon absorption of picosecond pulses at 1.064 μm were used to examine the room-temperature nonlinear optical responses of CdTe crystals with different types of conductivity. Pulse-probe degenerate four-wave mixing measurements of grating dynamics on subnanosecond time scales were used to measure the ambipolar diffusion coefficient (Da) of charge carriers in the crystals. The value of Da =3.0 cm2 s-1 which was obtained is in very good agreement with theoretical estimates. A long-lived contribution to the signal consistent with a trapped charge photorefractive effect was observed at large grating spacings for n-type conductivity, and is tentatively attributed to a larger trap density in this sample. Measurements of the relative scattering efficiencies of successive diffracted orders in the Raman-Nath regime allowed for calculation of the laser-induced change in the index of refraction, due to the creation of free carriers. The value of Δn=4×10-4 which was obtained is in good agreement with theoretical estimates.

  11. High efficiency indium oxide/cadmium telluride solar cells

    Science.gov (United States)

    Nakazawa, T.; Takamizawa, K.; Ito, K.

    1987-02-01

    Solar cells have been fabricated by reactive deposition of thin-film n-In2O3 onto single-crystal p-CdTe. The cell has a total area solar power conversion efficiency of 13.4 percent which corresponds to an active area efficiency of 14.4 percent at air mass 1.5 without antireflection coatings. The cell consists of a buried homojunction structure with low dark saturation current density.

  12. Study and microscopic characterization of the cadmium telluride deep levels

    International Nuclear Information System (INIS)

    The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H+ are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects

  13. Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.

    Science.gov (United States)

    Fonseca, Jose J; Tongay, Sefaattin; Topsakal, Mehmet; Chew, Annabel R; Lin, Alan J; Ko, Changhyun; Luce, Alexander V; Salleo, Alberto; Wu, Junqiao; Dubon, Oscar D

    2016-08-01

    A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.

  14. Deposition of antimony telluride thin film by ECALE

    Institute of Scientific and Technical Information of China (English)

    GAO; Xianhui; YANG; Junyou; ZHU; Wen; HOU; Jie; BAO; Siqian; FAN; Xi'an; DUAN; Xingkai

    2006-01-01

    The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.

  15. Induced superconductivity in the topological insulator mercury telluride

    Energy Technology Data Exchange (ETDEWEB)

    Maier, Luis

    2015-07-01

    The combination of a topological insulator (TI) and a superconductor (S), which together form a TI/S interface, is expected to influence the possible surface states in the TI. It is of special interest, if the theoretical prediction of zero energy Majorana states in this system is verifiable. This thesis presents the experimental realization of such an interface between the TI strained bulk HgTe and the S Nb and studies if the afore mentioned expectations are met. As these types of interfaces were produced for the first time the initial step was to develop a new lithographic process. Optimization of the S deposition technique as well as the application of cleaning processes allowed for reproducible fabrication of structures. In parallel the measurement setup was upgraded to be able to execute the sensitive measurements at low energy. Furthermore several filters have been implemented into the system to reduce high frequency noise and the magnetic field control unit was additionally replaced to achieve the needed resolution in the μT range. Two kinds of basic geometries have been studied: Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs). A JJ consists of two Nb contacts with a small separation on a HgTe layer. These S/TI/S junctions are one of the most basic structures possible and are studied via transport measurements. The transport through this geometry is strongly influenced by the behavior at the two S/TI interfaces. In voltage dependent differential resistance measurements it was possible to detect multiple Andreev reflections in the JJ, indicating that electrons and holes are able to traverse the HgTe gap between both interfaces multiple times while keeping phase coherence. Additionally using BTK theory it was possible to extract the interface transparency of several junctions. This allowed iterative optimization for the highest transparency via lithographic improvements at these interfaces. The increased transparency and thus the increased coupling of the Nb's superconductivity to the HgTe results in a deeper penetration of the induced superconductivity into the HgTe. Due to this strong coupling it was possible to enter the regime, where a supercurrent is carried through the complete HgTe layer. For the first time the passing of an induced supercurrent through strained bulk HgTe was achieved and thus opened the area for detailed studies. The magnetic dependence of the supercurrent in the JJ was recorded, which is also known as a Fraunhofer pattern. The periodicity of this pattern in magnetic field compared to the JJ geometry allowed to conclude how the junction depends on the phase difference between both superconducting contacts. Theoretical calculations predicted a phase periodicity of 4π instead of 2π, if a TI is used as weak link material between the contacts, due to the presence of Majorana modes. It could clearly be shown that despite the usage of a TI the phase still was 2π periodic. By varying further influencing factors, like number of modes and phase coherence length in the junction, it might still be possible to reach the 4π regime with bound Majorana states in the future. A good candidate for further experiments was found in capped HgTe samples, but here the fabrication process still has to be developed to the same quality as for the uncapped HgTe samples. The second type of geometry studied in this thesis was a DC-SQUID, which consists of two parallel JJs and can also be described as an interference device between two JJs. The DC-SQUID devices were produced in two configurations: The symmetric SQUID, where both JJs were identical, and the asymmetric SQUID, where one JJ was not linear, but instead has a 90 bent. These configurations allow to test, if the predicted uniformity of the superconducting band gap for induced superconductivity in a TI is valid. While the phase of the symmetric SQUID is not influenced by the shape of the band gap, the asymmetric SQUID would be in phase with the symmetric SQUID in case of an uniform band gap and out of phase if p- or d-wave superconductivity is dominating the transport, due to the 90° junction. As both devices are measured one after another, the problem of drift in the coil used to create the magnetic field has to be overcome in order to decide if the oscillations of both types of SQUIDs are in phase. With an oscillation period of 0.5 mT and a drift rate in the range of 5.5 μT/h the measurements on both configurations have to be conducted in a few hours. Only then the total shift is small enough to compare them with each other. For this to be possible a novel measurement system based on a real time micro controller was programmed, which allows a much faster extraction of the critical current of a device. The measurement times were reduced from days to hours, circumventing the drift problems and enabling the wanted comparison. After the final system optimizations it has been shown that the comparison should now be possible. Initial measurements with the old system hinted that both types of SQUIDs are in phase and thus the expected uniform band gap is more likely. With all needed optimizations in place it is now up to the successors of this project to conclusively prove this last point. This thesis has proven that it is possible to induce superconductivity in strained bulk HgTe. It has thus realized the most basic sample geometry proposed by Fu and Kane in 2008 for the appearance of Majorana bound states. Based on this work it is now possible to further explore induced superconductivity in strained bulk HgTe to finally reach a regime, where the Majorana states are both stable and detectable.

  16. The origin of incipient ferroelectricity in lead telluride.

    Science.gov (United States)

    Jiang, M P; Trigo, M; Savić, I; Fahy, S; Murray, É D; Bray, C; Clark, J; Henighan, T; Kozina, M; Chollet, M; Glownia, J M; Hoffmann, M C; Zhu, D; Delaire, O; May, A F; Sales, B C; Lindenberg, A M; Zalden, P; Sato, T; Merlin, R; Reis, D A

    2016-01-01

    The interactions between electrons and lattice vibrations are fundamental to materials behaviour. In the case of group IV-VI, V and related materials, these interactions are strong, and the materials exist near electronic and structural phase transitions. The prototypical example is PbTe whose incipient ferroelectric behaviour has been recently associated with large phonon anharmonicity and thermoelectricity. Here we show that it is primarily electron-phonon coupling involving electron states near the band edges that leads to the ferroelectric instability in PbTe. Using a combination of nonequilibrium lattice dynamics measurements and first principles calculations, we find that photoexcitation reduces the Peierls-like electronic instability and reinforces the paraelectric state. This weakens the long-range forces along the cubic direction tied to resonant bonding and low lattice thermal conductivity. Our results demonstrate how free-electron-laser-based ultrafast X-ray scattering can be utilized to shed light on the microscopic mechanisms that determine materials properties. PMID:27447688

  17. Thermoelectric materials: ternary penta telluride and selenide compounds

    Science.gov (United States)

    Sharp, Jeffrey W.

    2002-06-04

    Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

  18. Thermoelectric materials ternary penta telluride and selenide compounds

    Science.gov (United States)

    Sharp, Jeffrey W.

    2001-01-01

    Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

  19. Kinetics of plastic flow in cadmium telluride single crystal

    International Nuclear Information System (INIS)

    To identify the microscopic mechanism of plastic flow, we have analyzed temperature dependence of the critical resolved shear stress (CRSS) and of the activation volume for CdTe single crystals deformed in compression at various temperatures between 150 and 275K in terms of the kink-pair nucleation model of plastic flow in intrinsically strong crystals. In this model, stress-assisted thermally -activated kink-pair nucleation is considered to facilitate the passage of screw dislocation over a Peierls barrier. It is found that the yield stress tow depends on temperature T as tow/sup 0.5/ = A - BT, where A and B are positive constants, whereas the activation volume v varies with temperature T through the relation v/sup -I/ = C - DT, where C and D are positive constants. However, the slope of the straight line fitted to the data point in each case undergoes a change at a critical temperature 200K, indicating a transition in the rate process of yielding. For T direction in slip plane (Ill) was nearly equal to the distance between two neighboring Peierls valleys. But for T >200K, the maximum kink-pair height was almost twice the intervalley separation. We believe that the formation of kink-pair having a height larger than intervalley distance is hardly possible. Most probably stress-assisted thermally-activated breakaway of edge- dislocation segments from localized barriers, e.g. vacancies in above-equilibrium concentration, solid and gaseous residual impurities, dislocation debris formed during the stage of anelastic deformation of the specimen in the process of raising the stress from zero to the macro yield-point etc. determines the CRSS of nominally pure CdTe crystals in the temperature range 200 to 275K. (author)

  20. MBE-Grown Lead Tin Telluride Infrared Devices

    Directory of Open Access Journals (Sweden)

    T. Srinivasan

    1989-01-01

    Full Text Available An attempt was made to examine the performance of the Pb0.82sn0.18Te films grown by Molecular Beam Epitaxy (MBEtechnique as infrared (IR band pass filter and photoconductive IR detector. Films of required thickness for these purposes were precalculated and were grown by controlling the growth time. The fabricated band-pass filters were with Full Width at Half Maximum(FWHM of 20-25 per ent centred at 6.5, 8 and 10 microns. The measured detectivity of the film was of the order of 10 power 8 cm H Z (1/2W(-1 for 500 K black body temperature with 800 Hz chopping frequencyand 10 per cent electrical bandwidth at 77 K. All these films weregrown on freshly cleaved KC1 (100 substrates.

  1. 1.7 MeV电子辐照对CdTe太阳电池电流传输特性影响的图谱分析%Spectral Analysis of the Effects of 1.7 MeV Electron Irradiation on the Current Transfer Characteristic of Cadmium Telluride Solar Cells

    Institute of Scientific and Technical Information of China (English)

    田金秀; 曾广根; 何绪林; 张静全; 武莉莉; 李卫; 黎兵; 王文武; 冯良桓

    2014-01-01

    研究了1.7 MeV的电子辐照对具有Anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe∶Cu/Ni结构的碲化镉多晶薄膜太阳电池器件性能的影响。抗辐照玻璃的使用,有效防止了普通玻璃受辐照后性能变化对测试结果的影响。利用光、暗I-V ,C-V ,QE ,AS等测试手段,分析了包括开路电压、短路电流、转换效率在内的电池性能。通过对比研究暗电流密度、分析了辐照对电池电流传输特性的影响。辐照后短路电流下降很大,电池效率明显降低。反向饱和电流密度有所增加,表明太阳电池的pn结特性受到损伤,而二极管理想因子几乎不变,说明太阳电池电流的输运机制未发生了变化。量子效率曲线证明是由于太阳电池结区损伤影响了光生载流子的收集。辐照使载流子浓度下降为原来的40.6%。导纳谱研究最终发生辐照会引入Cd2+缺陷能级,其位置为 Et -Ev =(0.58±0.02)eV ,俘获截面为1.78×10-16 cm2,表明辐照会影响光生载流子的产生,增加了载流子复合的概率,使得反向暗电流增大,最终导致电池的短路电流衰减。%The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystal-line thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe∶Cu/Ni have been studied .Light and dark I-V characteristics ,dark C-V characteristics ,quantum efficiency (QE) ,ad-mittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-cir-cuit voltage (Voc) ,short-circuit current (Isc) ,fill factor (FF) and conversion efficiency (η) .It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo) ,diode ideal factor (A) ,quantum efficiency ,carrier concentration and the depletion layer width .The decline in short-circuit current was very

  2. Use of trioctylphosphine oxide for transplutonium element extraction and purification

    International Nuclear Information System (INIS)

    Investigated was extraction of tri-valent curium, berkelium, californium, einsteinium as well as cerium and europium with trioctylphosphin oxide from lactic acid solutions, containing DTPA and aluminium nitrate depending on the aluminium nitrate and TOPO concentrations and nitric acid solutions of variable concentration as well. Under optimum conditions of extraction chromatography of berkelium studied was the distribution of cobalt, nickel, chromium, iron, aluminium, titanium, zirconium and niobium ions, and the coefficients of berkelium purification from cations investigated were determined. The effect of weight quantities of cation impurities on extraction chromatographic yield of berkelium has been investigated. Examples of practice application of the extraction chromatography with the use of TOPO are given

  3. Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices.

    Science.gov (United States)

    Srathongluan, Pornpimol; Vailikhit, Veeramol; Teesetsopon, Pichanan; Choopun, Supab; Tubtimtae, Auttasit

    2016-11-01

    This work demonstrates the synthesis of a novel double-layered Cu2-xTe/MnTe structure on a WO3 photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu2-xTe(17) ∼5-10nm and MnTe(3) ∼2nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu2-xTe(17)/MnTe(11) are ∼50 and 150nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu2-xTe nanoparticles (NPs), leading to a narrower Eg equal to 0.58eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO3, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO3/boron-doped [Cu2-xTe(17)/MnTe(11)] structure with a photocurrent density (Jsc)=16.43mA/cm(2), an open-circuit voltage (Voc)=0.305V and a fill factor (FF)=28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material. PMID:27451035

  4. High efficiency cadmium telluride and zinc telluride based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1992

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  5. Growth of bismuth telluride thin film on Pt by electrochemical atomic layer epitaxy

    Institute of Scientific and Technical Information of China (English)

    ZHU Wen; YANG Jun-you; GAO Xian-hui; HOU Jie; ZHANG Tong-jun; CUI Kun

    2005-01-01

    An automated thin-layer flow cell electrodeposition system was developed for growing Bi2 Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt,this reductive Te underpotential deposition (UPD)/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4: 3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO2+ reduction excludes the possibility of Bi2 Te3 formation. X-ray photoelectron spectroscopy (XPS) analysis also reveals that the incomplete charge transfer in HTeO2+ occurs in Te direct deposition. The effective way of depositing Bi2 Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS). A polycrystalline characteristic was confirmed by XRD. The 2 : 3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about 0.3 - 0.4 μm in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.

  6. Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%.

    Science.gov (United States)

    Böhm, Marcus L; Jellicoe, Tom C; Tabachnyk, Maxim; Davis, Nathaniel J L K; Wisnivesky-Rocca-Rivarola, Florencia; Ducati, Caterina; Ehrler, Bruno; Bakulin, Artem A; Greenham, Neil C

    2015-12-01

    Multiple exciton generation (MEG) in semiconducting quantum dots is a process that produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells but it remains challenging to harvest charge-carrier pairs generated by MEG in working photovoltaic devices. Initial yields of additional carrier pairs may be reduced due to ultrafast intraband relaxation processes that compete with MEG at early times. Quantum dots of materials that display reduced carrier cooling rates (e.g., PbTe) are therefore promising candidates to increase the impact of MEG in photovoltaic devices. Here we demonstrate PbTe quantum dot-based solar cells, which produce extractable charge carrier pairs with an external quantum efficiency above 120%, and we estimate an internal quantum efficiency exceeding 150%. Resolving the charge carrier kinetics on the ultrafast time scale with pump-probe transient absorption and pump-push-photocurrent measurements, we identify a delayed cooling effect above the threshold energy for MEG.

  7. Novel superstructure of the rocksalt type and element distribution in germanium tin antimony tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Neudert, Lukas [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Urban, Philipp [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Fitch, Andy [European Synchrotron Radiation Facility, CS40220, 38043 Grenoble Cedex 9 (France); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany)

    2014-11-15

    A superstructure of the rocksalt-type observed in quenched CVT-grown single crystals of Ge{sub 3.25(7)}Sn{sub 1.10(3)}Sb{sub 1.10(3)}Te{sub 6} was elucidated by X-ray diffraction using fourfold twinned crystals (space group P3{sup ¯}m1, a=4.280(1) Å, c=20.966(3) Å). The structure is built up of distorted rocksalt-type building blocks typical for long-range ordered GST materials and substitution variants thereof. In contrast to those phases, an exclusive ABC-type cubic stacking sequence of the Te-atom layers is present. High-resolution electron microscopy reveals spheroidal domains with this structure (average diameter 25 nm) whose stacking direction is perpendicular to the 〈1 1 1〉 directions of the basic rocksalt-type structure. Additional slab-like domains with a lateral extension up to 1 µm occasionally result in a hierarchical structure motif. Due to the similar electron counts of the elements involved, resonant diffraction was used in order to elucidate the element distribution in rocksalt-type building blocks of the stable layered compound 39R-Ge{sub 3}SnSb{sub 2}Te{sub 7} (R3{sup ¯}m, a=4.24990(4) Å, c=73.4677(9) Å). Sb tends to occupy the atom site close to the van der Waals gaps while Ge concentrates in the center of the building blocks. - Graphical abstract: High-resolution transmission electron micrograph, SAED pattern and reciprocal lattice section of X-ray single crystal data of Ge{sub 3.25}Sn{sub 1.1}Sb{sub 1.1}Te{sub 6} with an 11P-type superstructure of the rocksalt type. - Highlights: • A novel superstructure of the rocksalt-type in the system Ge–Sn–Sb–Te is elucidated. • It combines the cubic stacking of the HT phase with building blocks of the RT phase. • It indicates the ordering mechanism during the phase transition of GST materials. • A hierarchical structure motif is promising with respect to the reduction of κ{sub L}. • Resonant diffraction reveals the element distribution in 39R-Ge{sub 3}SnSb{sub 2}Te{sub 7}.

  8. Tellurium-evaporation-annealing for p-type bismuth–antimony–telluride thermoelectric materials

    International Nuclear Information System (INIS)

    Highlights: ► Tellurium evaporation annealing method for sintered p-type (Bi,Sb)2Te3 is reported. ► This method is based on the control of carrier concentrations. ► The underlying mechanism is also determined using ab initio calculation. - Abstract: A tellurium evaporation annealing method has been investigated to control the carrier concentration of sintered (Bi,Sb)2Te3 compounds. Hot-pressed (Bi,Sb)2Te3 bulk alloys and tellurium powders located in an evacuated ampoule, were heated to 673 K and held for 3, 12 and 48 h. The crystal structure and chemical composition in the annealed specimens were preserved, while the carrier concentrations were varied between 1.53 × 1019 and 2.57 × 1019 cm−3, and the thermal conductivity at 300 K ranged between 1.20 and 1.25 W m−1 K−1. The figure of merit at 300 K was enhanced from 0.86 to 1.06 when the specimens were annealed for 3 h. To identify the underlying mechanism, we utilized ab initio density functional theory calculations. These computations indicated that a Te ad-layer on top of the Bi2Te3 energetically favors bulk Bi atoms to migrate to the surface. Our experimental measurements and the first-principles validations consistently indicate that the tellurium evaporation annealing method is a novel process for enhancing the thermoelectric performance of Bi–Te compounds by controlling their carrier concentrations, which is particularly useful in dealing with nano-scale composites.

  9. Temperature-dependent adsorption of tellurium and mercury species on cadmium telluride studied by spectroscopic ellipsometry

    Science.gov (United States)

    Badano, Giacomo

    In this study, a subsonic molecular beam of Hg was directed on CdTe surfaces and the absorption spectra were measured for the first time by ellipsometry. We analyze the optical spectra of Hg adsorbed on CdTe surfaces, over the range 1.6--4.5 eV, for a variety of temperatures and Hg fluxes. When a CdTe(211)B surface is subjected to a Hg flux, various effects can occur. Hg will be present on and just beneath the surface in a variety of forms: chemisorbed on the Te sites or on excess Te (forming a 2D surface, 1D chains or isolated atoms or clusters), physisorbed as a 2D liquid, or diffused into the CdTe bulk. In our analysis of the change in the pseudo dielectric function, we made several approximations. We treated the different constituents as separate layers, which is strictly speaking not true, because the various Hg forms are probably mixed. Second, we used the 3D form of the Hg1- xCdxTe e(□; x) dielectric function to mimic chemisorbed Hg on the surface. Also, we used a Drude function to model the presence of physisorbed Hg, although that is probably a good approximation. Third, we fit only the imaginary part of the dielectric function, , because it has a more direct physical meaning, and unlike the real part does not depend on the presence of out-of-range critical points. In addition, the limited resolution of the M88 ellipsometer prevented us from using a critical point analysis to interpret the data. These limitations notwithstanding, our analysis gives surprisingly good results, in that it reproduces the expected dependence of the thickness of the chemisorbed and physisorbed components correctly as a function of temperature and pressure and gives reasonable values for the composition of the Hg1-xCd xTe. Although we do not at present believe the absolute numbers that the analysis provides, we believe that this approach confirms our general ideas regarding the nature of the CdTe(211) surface under Hg, and is valuable at least technologically, to obtain a reliable run-to-run characterization of the surface before growth.

  10. Physical characterization of cadmium telluride/cadmium sulfide photovoltaics: Defects, fields, and micrononuniformities

    Science.gov (United States)

    Shvydka, Diana

    Recent advances in large area thin-film photovoltaic manufacturing have raised a number of problems related to the physical parameters and processes behind the device efficiency and stability. The characteristics of interest include the defect spectra and related optical absorption, the built-in electric field distribution, the degree of lateral uniformity of the device, and the device stability. Established in this thesis is a set of techniques appropriate for the physical characterization of the above features in CdTe/CdS solar cells, addressing the issues of device spectra vs. energy (as revealed in the optical absorption, photoluminescence (PL), and admittance spectroscopy); the electric field distribution analyzed by means of bias dependent PL, and, indirectly, by capacitance measurements; device lateral resistivity and uniformity, through the phenomenon of nonlocal optical response and PL mapping; local parameter fluctuations as appear in virtually all of the above cases. The most important physical conclusions made are: energy spectra of polycrystalline CdTe based photovoltaics combine the features of crystalline materials, such as identifiable point defects, and amorphous materials, which exhibit continuous spectra of localized states; the concept of a single-defect (elemental) capacitance is for the first time defined and applied to estimate the density of states in polycrystalline p-n junctions; a phenomenon of bias-dependent PL in CdTe based photovoltaics is for the first time observed and modeled; a new phenomenon of nonlocal photovoltaic response is observed and interpreted. The results suggest several practical applications, such as: absorption and PL measurements as a diagnostic tool for monitoring the CdCl2, quality of treatments; admittance spectroscopy techniques to diagnose the material quality and degradation through its defect spectra and concentration; bias-dependent PL as a sensitive nondestructive accelerated life testing tool; nonlocal PV response as a transparent contact diagnostic tool in a finished device.

  11. Modeling effects of solute concentration in Bridgman growth of cadmium zinc telluride

    Science.gov (United States)

    Stelian, Carmen; Duffar, Thierry

    2016-07-01

    Numerical modeling is used to investigate the effect of solute concentration on the melt convection and interface shape in Bridgman growth of Cd1-x Znx Te (CZT). The numerical analysis is compared to experimental growth in cylindrical ampoules having a conical tip performed by Komar et al. (2001) [15]. In these experiments, the solidification process occurs at slow growth rate (V = 2 ṡ10-7 m / s) in a thermal field characterized by a vertical gradient GT = 20 K / cm at the growth interface. The computations performed by accounting the solutal effect show a progressive damping of the melt convection due to the depleted Zn at the growth interface. The computed shape of the crystallization front is in agreement with the experimental measurement showing a convex-concave shape for the growth through the conical part of the ampoule and a concave shape of the interface in the cylindrical region. The distribution of Zn is nearly uniform over the crystal length except for the end part of the ingots. The anomalous zinc segregation observed in some experiments is explained by introducing the hypothesis of incomplete charge mixing during the homogenization time which precedes the growth process. When the crystallization is started in ampoules having a very sharp conical tip, the heavy CdTe is accumulated at the bottom part of the melt, giving rise to anomalous segregation patterns, featuring very low zinc concentration in the ingots during the first stage of the solidification.

  12. Nature of physical processes in solar cells utilizing cadmium telluride--electrolyte junctions

    Energy Technology Data Exchange (ETDEWEB)

    Panosyan, Z.R.; Arutyunyan, V.M.; Meliksetyan, V.A.

    1985-09-01

    An investigation was made of the physical processes occurring in photoelectrochemical conversion of solar energy by a CdTe--electrolyte junction involving surface exciton and electron states. The influence of these processes on the efficiency of conversion of solar energy into chemical energy of hydrogen was analyzed.

  13. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B., E-mail: gnade@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, G. R.; Allee, D. R. [Flexible Display Center, Arizona State University, Phoenix, Arizona 85284 (United States); Sastré-Hernández, J.; Contreras-Puente, G. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Mexico City 07738 (Mexico); Mendoza-Pérez, R. [Universidad Autónoma de la Ciudad de México, Mexico City 09790 (Mexico)

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  14. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  15. Nanoscale Phase Immiscibility in High-ZT Bulk Lead Telluride Thermoelectric Materials

    Science.gov (United States)

    Girard, Steven Neal

    Renewable energy initiatives have increased interest in thermoelectric materials as an option for inexpensive and environmentally friendly waste heat-to-power generation. Unfortunately, low efficiencies have limited their wide-scale utilization. This work describes the synthesis and characterization of bulk nanostructured thermoelectric materials wherein natural phase immiscibility is manipulated to selectively generate nanoscale inclusions of a second phase that improve their efficiency through reductions in lattice thermal conductivity. The PbTe-PbS system exhibits natural phase separation by nucleation and growth or spinodal decomposition phase transformations depending on composition and temperature treatment. Through rapid quenching, nearly ideal solid solution alloys of PbTe-PbS are observed by powder X-ray diffraction. However, characterization by solid-state NMR and IR reflectivity show that solid solutions are obtained for rapidly quenched samples within the nucleation and growth region of the phase diagram, but samples within the spinodal decomposition region exhibit very slight phase immiscibility. We report the temperatures of phase separation using high temperature powder X-ray diffraction. Microscopy reveals that phase separation in PbTe-PbS naturally produces nanoinclusions. A decrease in lattice thermal conductivity is observed as a result of the solid solution-to-nanostructured phase transformation in this materials system, increasing thermoelectric figure of merit. Sn addition to PbTe-PbS produces a pseudobinary system of PbTe-PbSnS 2. This materials system produces microscale lamellae that effectively reduce lattice thermal conductivity. Unfortunately, the PbSnS2 inclusions also scatter electrons, reducing electrical conductivity and producing only a minimal increase in thermoelectric figure of merit. We additionally investigate PbSnS2 as prepared through Bridgman crystal growth. PbTe-PbS doped with Na appears to increase the kinetic rate of phase separation, so that rapid quenching does not produce solid solutions. Na segregation in and at the interfaces of PbS nanocrystals results in the formation of cuboctahedral nanostructures that reduce lattice thermal conductivity. Additionally, at high temperatures Na incorporation in PbTe-PbS appears to promote carriers into a different electronic energy band of PbTe, significantly enhancing the electronic transport. The enhancement in thermoelectric figure of merit by concurrent reductions in lattice thermal conductivity and enhancement in electronic properties make this material particularly attractive for future device fabrication.

  16. Fluid inclusion and stable isotope study of telluride mineralization at Mahd Adh Dhahab, Saudi Arabia

    Energy Technology Data Exchange (ETDEWEB)

    Afifi, A.M.; Kelly, W.C.

    1985-01-01

    Mahd Adh Dhahab is unique among Precambrian gold deposits in that it displays many characteristics of epithermal precious metal districts. Au-Ag-Cu-Zn-Pb mineralization occurs principally in the third of five generations of quartz veins. Sulfur isotopic equilibrium was generally maintained among sulfides which range in delta/sup 34/S from -1.8 (galena) to 6.4 (pyrite). The narrow range in delta/sup 34/S of sulfides is inconsistent with large variations in f02 calculated from chlorite +/- pyrite +/- hematite assemblages. Galena-sphalerite pairs yield temperatures in the range 160-270/sup 0/C for stage 3 veins, which fall within the 120-300/sup 0/C range defined by fluid inclusion thermometry. Fluid salinities are in the range 0.5 wt.% NaCl equivalent. The trends indicate mixing of delta/sup 18/O approx. = 0 waters with heavier more oxidized waters during stage 4 deposition which led to non-equilibrium oxidation of H/sub 2/S. deltaD values of vein chlorites fall within a narrow range of -65 to -75, while deltaD measurements of inclusion fluids in quartz display a wider spread from -13 to -43; the lighter values may reflect contamination by secondary inclusions. The stable isotope data indicate probable derivation of both sulfur and carbon from igneous sources. District-wide variation in sulfur and oxygen isotopes indicate the presence of several hydrothermal centers, which has possible significance to exploration.

  17. Space processing of electronic materials. [determining ther themal conductivity of mercury cadmium tellurides and furnace design

    Science.gov (United States)

    Workman, G. L.; Holland, L. R.

    1981-01-01

    The relative values of thermal conductivity of solid and liquid HgCdTe are critically important in the design configuration of the furnaces used for Bridgman crystal growth. The thermal diffusivity of the material is closely linked to the conductivity by the defining relation D = k/rho c, where D is the diffusivity, K is the thermal conductivity, rho is the density, and c is the specific heat. The use of transient and periodic heating approaches to measure the diffusivity are explored. A system for securing and extracting heat from silica or glass tubes under high C vacuum conditions is described.

  18. Induced superconductivity in the surface state of mercury telluride (HgTe)

    International Nuclear Information System (INIS)

    It has been recently shown that the strained epitaxial growth of bulk HgTe layers opens a band gap in the normally semi-metallic material. This means that strained HgTe meets all prerequisites of a topological insulator, i.e. surface states and an insulating bulk, which does not contribute to transport measurements. The interfaces between topological insulators and superconductors are especially interesting due to the possibility of creation and detection of majorana fermions. Our current work is focussing on investigating contacts between strained HgTe and Nb as a superconducting material. First results show proximity effect and multiple sub gap features which are discussed in detail.

  19. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  20. Tellurium vacancy in cadmium telluride revisited: size effects in the electronic properties

    OpenAIRE

    Menéndez-Proupin, E.; Orellana, W.

    2015-01-01

    The quantum states and thermodynamical properties of the Te vacancy in CdTe are addressed by first principles calculations, including the supercell size and quasiparticle corrections. It is shown that the 64-atoms supercell calculation is not suitable to model the band structure of the isolated Te vacancy. This problem can be solved with a larger 216-atoms supercell, where the band structure of the defect seems to be a perturbation of that of the perfect crystal. It is interesting to note tha...

  1. High efficiency cadmium and zinc telluride-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (USA). School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  2. Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%.

    Science.gov (United States)

    Böhm, Marcus L; Jellicoe, Tom C; Tabachnyk, Maxim; Davis, Nathaniel J L K; Wisnivesky-Rocca-Rivarola, Florencia; Ducati, Caterina; Ehrler, Bruno; Bakulin, Artem A; Greenham, Neil C

    2015-12-01

    Multiple exciton generation (MEG) in semiconducting quantum dots is a process that produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells but it remains challenging to harvest charge-carrier pairs generated by MEG in working photovoltaic devices. Initial yields of additional carrier pairs may be reduced due to ultrafast intraband relaxation processes that compete with MEG at early times. Quantum dots of materials that display reduced carrier cooling rates (e.g., PbTe) are therefore promising candidates to increase the impact of MEG in photovoltaic devices. Here we demonstrate PbTe quantum dot-based solar cells, which produce extractable charge carrier pairs with an external quantum efficiency above 120%, and we estimate an internal quantum efficiency exceeding 150%. Resolving the charge carrier kinetics on the ultrafast time scale with pump-probe transient absorption and pump-push-photocurrent measurements, we identify a delayed cooling effect above the threshold energy for MEG. PMID:26488847

  3. Electrodeposition and characterization of nano-crystalline antimony telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lensch-Falk, J.L.; Banga, D. [Sandia National Laboratories, Livermore, CA 94550 (United States); Hopkins, P.E. [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Robinson, D.B.; Stavila, V. [Sandia National Laboratories, Livermore, CA 94550 (United States); Sharma, P.A. [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Medlin, D.L., E-mail: dlmedli@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2012-07-31

    Electrodeposition is a promising low-cost method to fabricate nanostructured thermoelectric thin films such as Sb{sub 2}Te{sub 3}. However, electrodeposition of crystalline Sb{sub 2}Te{sub 3} without the need for additional processing and with good compositional control has presented a challenge. Here we report on the electrodeposition of crystalline Sb{sub 2}Te{sub 3} thin films at room temperature from a tartaric-nitric acid electrolyte using a pulsed, potentiostatic process. The effects of synthesis conditions on the resulting microstructure and compositional homogeneity are investigated using x-ray diffraction, electron diffraction, electron microscopy, and energy dispersive x-ray spectroscopy. The composition of the Sb-Te films was found to be dependent on the interval between pulses, a result that is likely due to the slow kinetics associated with Sb{sub 2}Te{sub 3} formation at the surface. We also observed a change in texture and microstructure with varied applied pulse duration: for short pulse durations a lamellar microstructure with a {l_brace}000 Script-Small-L {r_brace} texture forms, whereas for longer pulse durations a more equiaxed and randomly oriented microstructure forms. The thermal conductivities of the pulsed electrodeposited films are surprisingly low at less than 2 W/K{center_dot}m and are found to systematically decrease with reduced pulse time. - Highlights: Black-Right-Pointing-Pointer We investigate the growth, microstructure, and thermal conductivity of Sb{sub 2}Te{sub 3} films. Black-Right-Pointing-Pointer Pulsed electrodeposition is used to grow crystalline Sb{sub 2}Te{sub 3} films. Black-Right-Pointing-Pointer Film composition and microstructure depend on the growth conditions. Black-Right-Pointing-Pointer Kinetics and thermodynamics are used to explain these observations. Black-Right-Pointing-Pointer The low thermal conductivities observed are correlated to microstructure and texture.

  4. Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozlov, D. V., E-mail: dvkoz@impras.ru; Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Varavin, V. S.; Mikhailov, N. N.; Dvorestky, S. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Teppe, F. [Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

    2015-12-15

    The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

  5. Polycrystalline thin film cadmium telluride n-i-p solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V. (Ametek, Inc., Harleysville, PA (USA))

    1990-06-01

    This paper discusses experiments and analyses of technical, economic and environmental issues relating to CdTe n-i-p solar cells and their potential to satisfy the DOE PV program goals. The basic cell structure is CdS-CdTe-ZnTe. Included is an experimental and theoretical study of the operation of these devices. Experiments related to deposition of the CdS and ZnTe layers, cascaded solar cells, and module fabrication are described. Manufacturing issues relating to costs, worker safety, and environmental security are discussed. 40 refs., 25 figs., 16 tabs.

  6. High efficiency cadmium and zinc telluride-based thin film solar cells

    Science.gov (United States)

    Rohatgi, A.; Summers, C. J.; Erbil, A.; Sudharsanan, R.; Ringel, S.

    1990-10-01

    Polycrystalline Cd(1-x)Zn(x)Te and Cd(1-x)Mn(x)Te films with a band gap of 1.7 eV were successfully grown on glass/SnO2/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd(1-x)Zn(x)Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd(1-x)Mn(x)Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd(1-x)Mn(x)Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5 percent. MBE-grown CdTe cells also produced 8 to 9 percent efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl2 + ZnCl2 chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  7. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  8. An ultrasensitive method for the determination of melamine using cadmium telluride quantum dots as fluorescence probes

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiafei; Li, Jin; Kuang, Huiyan; Feng, Lei; Yi, Shoujun; Xia, Xiaodong; Huang, Haowen [School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Key Laboratory of Theoretical Chemistry and Molecular Simulation of Ministry of Education of China, Hunan University of Science and Technology, Xiangtan 411201 (China); Chen, Yong; Tang, Chunran [School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Zeng, Yunlong, E-mail: yunlongzeng1955@126.com [School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Key Laboratory of Theoretical Chemistry and Molecular Simulation of Ministry of Education of China, Hunan University of Science and Technology, Xiangtan 411201 (China); State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)

    2013-11-13

    Graphical abstract: Melamine takes place of the TGA on the surface of TGA-CdTe QDs with negative charge to form melamine coated QDs changing the surface charge of the QDs, resulting the fluorescence quenched as the QDs aggregation occurred by electrostatic attraction of the two opposite charged nanocrystals. -- Highlights: •An ultrasensitive and selective method for the determination of melamine was developed at pH 11.0. •The selectivity of the method was improved. •The sensitivity of the method enhanced obviously as the CdTe QDs have higher QYs at pH 11. •The sensitivity and linear range for the analysis are size dependent using QDs PL probes. •Melamine takes the place of TGA resulting fluorescence quenched of QDs. -- Abstract: An ultrasensitive and simple method for the determination of melamine was developed based on the fluorescence quenching of thioglycolic acid (TGA) capped CdTe quantum dots (QDs) at pH 11.0. In strong alkaline aqueous solution, the selectivity of the method has been greatly improved due to most heavy metal ions show no interference as they are in the precipitation form or in their anion form. Furthermore, CdTe quantum dots have higher quantum yields at higher pH. The method has a wider concentration range and lower detection limit. The influence factors on the determination of melamine were investigated and the optimum conditions were determined. Under optimum conditions, the fluorescence intensity change of TGA coated CdTe quantum dots was linearly proportional to melamine over a concentration range from 1.0 × 10{sup −11} to 1.0 × 10{sup −5} mol L{sup −1} with a correlation coefficient of 0.9943 and a detection limit of 5 × 10{sup −12} mol L{sup −1}. The mechanism of fluorescence quenching of the QDs has been proposed based on the infrared spectroscopy information and electrophoresis experiments in presence of melamine under alkaline condition. The proposed method was employed to detect trace melamine in milk powder and pet feeds with satisfactory results.

  9. Contribution to cadmium telluride characterizations by ion beams and nuclear detection

    International Nuclear Information System (INIS)

    A short survey of the thermodynamics and crystal growth of CdTe is followed by the description of high mass and depth resolution Rutherford backscattering (RBS) with light and heavy ions. Energy losses in CdTe have been measured. Analysis of CdTe surfaces by RBS, SIMS, ellipsometry have also been performed. Diffused, implanted, or simply contacted CdTe junctions have been analyzed and then investigated as gamma spectrometers. The problem of polarization was specially studied

  10. Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

    Science.gov (United States)

    Pettes, Michael Thompson; Kim, Jaehyun; Wu, Wei; Bustillo, Karen C.; Shi, Li

    2016-10-01

    We report the in-plane thermoelectric properties of suspended (Bi1-xSbx)2Te3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x ˜ 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) coating. The lattice thermal conductivity is found to be below that for undoped ultrathin Bi2Te3 nanoplates of comparable thickness and in the range of 0.2-0.7 W m-1 K-1 at room temperature.

  11. Characterization of metal contacts on and surfaces of cadmium zinc telluride

    CERN Document Server

    Bürger, A; Chattopadhyay, K; Shi, D; Morgan, S H; Collins, W E; James, R B

    1999-01-01

    In the past several years significant progress has been made in building a database of physical properties for detector quality Cd sub x Zn sub 1 sub - sub x Te (CZT) (x=0.1-0.2) crystal material. CZT's high efficiency combined with its room temperature operation make the material an excellent choice for imaging and spectroscopy in the 10-200 keV energy range. For detector grade material, superior crystallinity and high bulk resistivity are required. The surface preparation during the detector fabrication plays a vital role in determining the contact characteristics and the surface leakage current, which are often the dominant factors influencing its performance. This paper presents a surface and contact characterization study aimed at establishing the effects of the surface preparation steps prior to contacting (polishing and chemical etching), the choice of the metal and contact deposition technique, and the surface oxidation process. A photoconductivity mapping technique is used for studying the effects of...

  12. Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films.

    Science.gov (United States)

    Han, Byeol; Kim, Yu-Jin; Park, Jae-Min; Yusup, Luchana L; Ishii, Hana; Lansalot-Matras, Clement; Lee, Won-Jun

    2016-05-01

    The mechanism underlying the deposition of SbTe films by alternating exposures to Sb(NMe2)3 and Te(GeMe3)2 was investigated. Sb(NMe2)3 and Te(GeMe3)2 were selected because they have very high vapor pressure and are free of Si, Cl, and O atoms in the molecules. The mechanism of deposition was proposed by density functional theory (DFT) calculation and was verified by in-situ quartz crystal microbalance (QCM) analysis. DFT calculation expected the ligand-exchange reactions between the Sb and Te precursors to form Me2NGeMe3 as the byproduct. QCM analysis indicated that a single -NMe2 group in Sb(NMe2)3 reacts with -TeGeMe3 on the surface to form an Sb2Te3 film, and that a small fraction of Sb is incorporated into the film by the thermal decomposition of Sb(NMe2)3. The Te(GeMe3)2 molecules were thermally stable up to 120 degrees C, while the Sb(NMe2)3 molecules decomposed at temperatures of 60 degrees C and higher. Sb-rich SbTe films with different Sb contents were prepared by controlling the partial decomposition of Sb(NMe2)3 molecules, which was enhanced by increasing the pulse time of the precursor. PMID:27483847

  13. High-Temperature Transport in Lanthanum Telluride and Other Modern Thermoelectric Materials

    Science.gov (United States)

    May, Andrew F.

    This manuscript discusses the materials physics of thermal and electrical transport in the solid state. In particular, the focus is on thermoelectric materials, which enable the direct conversion between thermal and electrical energy. The ability of simple approximations and semiclassical models to describe transport is explored in a variety of systems. In some cases, the traditional models provide a very accurate description of the transport for the compositions of interest to thermoelectric applications. This is the case for n-type Ba8Ga16-xGe30+x, where a single, parabolic band model captures the electrical transport and thus allows the accurate prediction of optimal composition for energy conversion. This is not found to be true in La3-xTe4, and more than one parabolic conduction band is required to describe the electrical transport. In this case, the use of ab initio electronic band structure calculations provided critical knowledge for physical models to be developed. The influence of structure on thermal transport is also examined in detail. The compounds considered typically possess low lattice thermal conductivity, with values often being less than or equal to 1 W/m/K at 300 K. This can generally be associated with large unit cells, where the high number of atoms per unit cell results in a large number of optical modes, which carry little heat due to their low group velocities. Phonon scattering is also considered, and the cation vacancies in La3-xTe 4 are found to reduce the lattice thermal conductivity by over 100% at room temperature. Finally, the resulting thermoelectric efficiency is discussed, where leg efficiencies near 20% of the Carnot efficiency are predicted in segmented legs. The work detailed here has led to the continued development of La3-xTe4 by the Jet Propulsion Laboratory, where it is a top candidate for future use in deep-space power-generation systems.

  14. Effects of spark plasma sintering conditions on the anisotropic thermoelectric properties of bismuth antimony telluride

    DEFF Research Database (Denmark)

    Han, Li; Hegelund Spangsdorf, Steeven; Van Nong, Ngo;

    2016-01-01

    -rate) using spark plasma sintering (SPS). The effects of SPS conditions on the anisotropic thermoelectric properties and microstructure evolutions were systematically investigated. The change of sintering temperature showed stronger influence than other sintering parameters to the resulting thermoelectric...

  15. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 1 November 1991--31 October 1992

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, C.D.; Bohn, R.G. [Toledo Univ., OH (United States)

    1993-10-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering and laser-driven physical vapor deposition (LDPVD) for CdTe-based thin-film solar cells. Both of these techniques are vacuum-based and share several other common physical principles. However, they differ somewhat in the typical kinetic energies of Cd, Te, and S that impact on the growth surface. The values of several processing parameters-optimized with the LDPVD technique-were taken as starting values for the RF sputtering method. We completed an initial optimization of the sputtering parameters for the CdTe growth and also successfully sputtered CdS for the first time. In addition, we successfully fabricated what we believe are the first CdS/CdTe cells in which RF sputtering was used for both CdS and CdTe layers. We achieved an all-LDPVD ell with an air mass (AM) 1.5 efficiency of 10.5% and an all-RF-sputtered cell with AM 1.5 efficiency of 10.4%, as tested by NREL.

  16. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 23 July 1990--31 October 1991

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. [Toledo Univ., OH (United States)

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  17. Prognostic evaluation in obese patients using a dedicated multipinhole cadmium-zinc telluride SPECT camera.

    Science.gov (United States)

    De Lorenzo, Andrea; Peclat, Thais; Amaral, Ana Carolina; Lima, Ronaldo S L

    2016-02-01

    The purpose of this study is to evaluate the prognostic value of myocardial perfusion SPECT obtained in CZT cameras (CZT-SPECT) with multipinhole collimation in obese patients. CZT-SPECT may be technically challenging in the obese, and its prognostic value remains largely unknown. Patients underwent single-day, rest/stress (supine and prone) imaging. Images were visually inspected and graded as poor, fair or good/excellent. Summed stress and difference scores (SSS and SDS, respectively) were converted into percentages of total perfusion defect and of ischemic defect by division by the maximum possible score. Obesity was defined as a body mass index (BMI) ≥ 30 kg/m(2) and classified as class I (BMI 30-34.9 kg/m(2)), II (BMI 35-39.9 kg/m(2)), or III (BMI ≥ 40 kg/m(2)). Patients were followed-up by telephone interview for the occurrence of all-cause death, myocardial infarction or revascularization. A Cox proportional hazards analysis was used to assess the independent predictors of death. Among 1396 patients, 365 (26.1 %) were obese (mean BMI 33.9 ± 3.6; 17.5 % class I, 3.4 % class II, and 3.4 % class III). Image quality was good/excellent in 94.5 % of the obese patients. The annualized mortality rates were not significantly different among obese and non-obese patients, being image quality. PMID:26424491

  18. 78 FR 68052 - Town of Telluride, Colorado; Notice of Preliminary Determination of a Qualifying Conduit...

    Science.gov (United States)

    2013-11-13

    ... the distribution of water for agricultural, municipal, or industrial consumption and not primarily for... Hydropower Facility Description: The proposed project would consist of: (1) A 10-inch intake pipe branching... Regulatory Efficiency Act of 2013 (HREA). The Pandora Water System Project would be located within...

  19. Microwave photoconductivity of cadmium telluride doped by gallium studied at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Marinin, Alexander; Radychev, Nikolay; Novikov, Gennadii; Gapanovich, Mikhail [IPCP RAS, Chernogolovka, Moscow (Russian Federation)

    2009-07-01

    The number of charges reaching the electrodes is a key parameter for detector quality characteristics. Solid solutions of CdTe-GaTe are considered as a perspective medium for X-ray detection. The kinetics of photogenerated charges was studied at different temperatures and for different doping concentrations. The samples were made by CdTe and GaTe vacuum sintering. The sintering temperature and duration were 1010 K and 300 h, respectively. The microwave photoconductivity (f=36 GHz) was investigated. The temporal resolution of the experimental facility was decreased to 5 ns. Investigations were made in a wide temperature range, T=140-295 K. A nitrogen laser was used for photoexcitation. Generally, the experimental curves of the photoresponse P(t) consist of fast and slow components after switching of the laser light. The temperature and the Ga content were found to influence the form, amplitude and characteristical decay time of P(t) considerably. The photoresponse decay analysis shows that a self-compensation effect is present and this effect results in a decrease of the depth of traps. The active medium parameters take a turn for the better by this effect.

  20. High-efficiency cadmium and zinc-telluride-based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  1. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    Science.gov (United States)

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm-2) compared with the melt-quench strategy (~50 MA cm-2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation.

  2. Finite solid angle correction factors and efficiencies for cadmium telluride detectors

    International Nuclear Information System (INIS)

    Finite solid angle correction factors and absolute detection efficiencies of the CdTe detectors of right circular cylindrical geometry for point sources placed on the axis of the detector, has been calculated for γ-ray energies from 100keV to 10MeV, taking into account various source to detector distances, ranging from 1 to 10cm. CdTe detectors of several area between 0.12 and 2.5cm2 of various thickness were considered

  3. Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

    KAUST Repository

    Gupta, R. P.

    2009-08-13

    Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.

  4. Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications

    Directory of Open Access Journals (Sweden)

    Pantelija M. Nikolic

    2015-01-01

    Full Text Available PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the “n” type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.

  5. Enhanced interfacial thermal transport in pnictogen tellurides metallized with a lead-free solder alloy

    Energy Technology Data Exchange (ETDEWEB)

    Devender,; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Devasenathipathy, Shankar; Swan, Johanna; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-11-15

    Controlling thermal transport across metal–thermoelectric interfaces is essential for realizing high efficiency solid-state refrigeration and waste-heat harvesting power generation devices. Here, the authors report that pnictogen chalcogenides metallized with bilayers of Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5} solder and Ni barrier exhibit tenfold higher interfacial thermal conductance Γ{sub c} than that obtained with In/Ni bilayer metallization. X-ray diffraction and x-ray spectroscopy indicate that reduced interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher Γ{sub c}. Finite element modeling of thermoelectric coolers metallized with Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5}/Ni bilayers presages a temperature drop ΔT ∼ 22 K that is 40% higher than that obtained with In/Ni metallization. Our results underscore the importance of controlling chemical intermixing at solder–metal–thermoelectric interfaces to increase the effective figure of merit, and hence, the thermoelectric cooling efficiency. These findings should facilitate the design and development of lead-free metallization for pnictogen chalcogenide-based thermoelectrics.

  6. Boundary Engineering for the Thermoelectric Performance of Bulk Alloys Based on Bismuth Telluride.

    Science.gov (United States)

    Mun, Hyeona; Choi, Soon-Mok; Lee, Kyu Hyoung; Kim, Sung Wng

    2015-07-20

    Thermoelectrics, which transports heat for refrigeration or converts heat into electricity directly, is a key technology for renewable energy harvesting and solid-state refrigeration. Despite its importance, the widespread use of thermoelectric devices is constrained because of the low efficiency of thermoelectric bulk alloys. However, boundary engineering has been demonstrated as one of the most effective ways to enhance the thermoelectric performance of conventional thermoelectric materials such as Bi2 Te3 , PbTe, and SiGe alloys because their thermal and electronic transport properties can be manipulated separately by this approach. We review our recent progress on the enhancement of the thermoelectric figure of merit through boundary engineering together with the processing technologies for boundary engineering developed most recently using Bi2 Te3 -based bulk alloys. A brief discussion of the principles and current status of boundary-engineered bulk alloys for the enhancement of the thermoelectric figure of merit is presented. We focus mainly on (1) the reduction of the thermal conductivity by grain boundary engineering and (2) the reduction of thermal conductivity without deterioration of the electrical conductivity by phase boundary engineering. We also discuss the next potential approach using two boundary engineering strategies for a breakthrough in the area of bulk thermoelectric alloys.

  7. Electronic Band Structure and Optical Characteristics of Quantum-Size Cadmium Telluride Crystals in Glass Films

    Science.gov (United States)

    Potter, Barrett George, Jr.

    Low-dimensional semiconductor structures now occupy a position of central importance with regard to the understanding and application of the basic physics of quantum confinement. Isolated II-VI semiconductor crystals embedded in transparent, insulating matrices represent a convenient medium for the study of quantum-size effects on the electronic and optical properties of compound semiconductors. The present study simultaneously examines finite crystal size-related shifts in the energies of optical transitions originating from states located at two different critical points of the zincblende Brillouin zone of CdTe. Using a versatile, dual source, R.F.-sputtering technique, CdTe-glass composite thin films have been produced possessing average crystal sizes ranging from 24 to 125 A in films containing 5 vol% semiconductor as determined by cross-sectional, transmission electron microscopy. Previously unattainable control over such microstructural characteristics as volume fraction and crystalline phase distribution throughout the matrix have been demonstrated using the sequential sputtering process. Analysis of quantum-size induced transition energy shifts, monitored by optical absorption, indicates the persistence of significant Coulomb interactions between carriers at the T-point of CdTe in crystallite sizes 0.3 times the size of the bulk exciton. L-point transition energy shifts support the existence of two-dimensional bound electron-hole pair states whose center-of-mass motion is confined within the potential well. The influence of finite crystal size distribution width on the interpretation of quantum confinement effects in these materials was also analyzed using a numerical integration technique. Findings substantiate the relative dominance of inhomogeneous broadening effects over homogeneous broadening in determining the observed absorption lineshape of the polydisperse collection of crystallites. This does not, however, explain an apparent saturation of the energy shifts exhibited by both Gamma- and L-point transitions at very small sizes. Such behavior is likely due to an increasing dominance of interface-related modifications to the bulk semiconductor crystalline and electronic structure. Insight into the chemical state of the semiconductor constituents is obtained using x-ray photoelectron spectroscopy with particular emphasis on the Te 3d_{5/2 } photoelectron peak. Spectrum components of this energy region, associated with the oxide, semiconductor and matrix, are monitored with heat-treatment of the films.

  8. Superconductivity in Pd-intercalated charge-density-wave rare earth poly-tellurides RETe n

    Science.gov (United States)

    He, J. B.; Wang, P. P.; Yang, H. X.; Long, Y. J.; Zhao, L. X.; Ma, C.; Yang, M.; Wang, D. M.; Shangguan, X. C.; Xue, M. Q.; Zhang, P.; Ren, Z. A.; Li, J. Q.; Liu, W. M.; Chen, G. F.

    2016-06-01

    Charge density waves (CDWs) are periodic modulations of the conduction electron density in solids, which are generally considered to remove electrons from the Fermi level, and thus preclude a superconducting state. However, in a variety of CDW materials, such as the prototypical transition metal chalcogenides, superconductivity has also been observed at very low temperature (Yokoya et al 2001 Science 294 2518; Morosan et al 2006 Nat. Phys. 2 544; Kiss et al 2007 Nat. Phys. 3 720), in which, although the two electronic correlated states are believed to occur in different parts of Fermi surface sheets derived mainly from chalcogen p-states and transition metal d-states, the nature of the relationship between them has not yet been unambiguously determined. Here we report the discovery of superconductivity in Pd-intercalated RETe n (RE = rare earth; n = 2.5, 3) CDW systems, in which the chalcogen layers alone are responsible for both superconductivity and CDW instability. Our finding could provide an ideal model system for comprehensive study of the interplay between CDW and superconductivity due to the remarkable simplicity of the electronic structure of Te planes.

  9. Ion beam etching system for mercury cadmium telluride and III-V compound semiconductors

    International Nuclear Information System (INIS)

    This paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows

  10. Enhancement in Thermoelectric Power in Lead Telluride Nanocomposite: Role of Oxygen Vis-À-Vis Nanostruct

    Directory of Open Access Journals (Sweden)

    B. Paul

    2011-01-01

    Full Text Available The present work reports enhanced power factor and reduced value of room temperature thermal conductivity in undoped PbTe nanocomposite, prepared from PbTe nanocrystals, synthesized via chemical route. The highest power factor is found to be 19.21 x 10 –4 Wm –1K –2 with room temperature thermal conductivity of 1.53 Wm –1K –1. The potential barrier at the sharp interfaces of the grains of the nanocomposites, occurred due to the adsorption of oxygen by the grain surfaces, have been found to play the main role to produce the high value of Seebeck coefficient (416 μV/K at 500 K by preferentially scattering the lower energy electrons and thus enhancing the power factor. The lattice destruction at the grain interfaces has been found to cause the remarkable reduction in thermal conductivity, through scattering a wide spectrum of phonon wavelength.

  11. Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 107ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated

  12. Interplay of spin-orbit coupling and superconducting correlations in germanium telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, Vijay; Nguyen, Thuy-Anh; Mansell, Rhodri; Ritchie, David [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE (United Kingdom); Mussler, Gregor [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425, Juelich (Germany)

    2016-03-15

    There is much current interest in combining superconductivity and spin-orbit coupling in order to induce the topological superconductor phase and associated Majorana-like quasiparticles which hold great promise towards fault-tolerant quantum computing. Experimentally these effects have been combined by the proximity-coupling of super-conducting leads and high spin-orbit materials such as InSb and InAs, or by controlled Cu-doping of topological insu-lators such as Bi{sub 2}Se{sub 3}. However, for practical purposes, a single-phase material which intrinsically displays both these effects is highly desirable. Here we demonstrate coexisting superconducting correlations and spin-orbit coupling in molecular-beam-epitaxy-grown thin films of GeTe. The former is evidenced by a precipitous low-temperature drop in the electrical resistivity which is quelled by a magnetic field, and the latter manifests as a weak antilocalisation (WAL) cusp in the magnetotransport. Our studies reveal several other intriguing features such as the presence of two-dimensional rather than bulk transport channels below 2 K, possible signatures of topological superconductivity, and unexpected hysteresis in the magnetotransport. Our work demonstrates GeTe to be a potential host of topological SC and Majorana-like excitations, and to be a versatile platform to develop quantum information device architectures. (copyright 2016 The Authors. Phys. Status Solidi RRL published by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Large-area and high-quality 2D transition metal telluride

    OpenAIRE

    Zhou, Jiadong; Liu, Fucai; Lin, Junhao; Huang, Xiangwei; Xia, Juan; Zhang, Bowei; Zeng, Qingsheng; Wang, Hong; Zhu, Chao; Niu, Lin; Wang, Xuewen; Fu, Wei; Yu, Peng; Chang, Tay-Rong; Hsu, Chuang-Han

    2016-01-01

    Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical v...

  14. Analysis of the traveling heater method for the growth of cadmium telluride

    Science.gov (United States)

    Peterson, Jeffrey H.; Fiederle, Michael; Derby, Jeffrey J.

    2016-11-01

    We discuss the development and implementation of a comprehensive mathematical model for the traveling heater method (THM) that is formulated to realistically represent the interactions of heat and species transport, fluid flow, and interfacial dissolution and growth under conditions of local thermodynamic equilibrium and steady-state growth. We examine the complicated interactions among zone geometry, continuum transport, phase change, and fluid flow driven by buoyancy. Of particular interest and importance is the formation of flow structures in the liquid zone of the THM that arise from the same physical mechanism as lee waves in atmospheric flows and demonstrate the same characteristic Brunt-Väisälä scaling. We show that flow stagnation and reversal associated with lee-wave formation are responsible for the accumulation of tellurium and supercooled liquid near the growth interface, even when the lee-wave vortex is not readily apparent in the overall flow structure. The supercooled fluid is posited to result in morphological instability at growth rates far below the limit predicted by the classical criterion by Tiller et al. for constitutional supercooling.

  15. Special characteristics of fluorescence and resonance Rayleigh scattering for cadmium telluride nanocrystal aqueous solution and its interactions with aminoglycoside antibiotics

    Institute of Scientific and Technical Information of China (English)

    LI TaiShan; LIU ShaoPu; LIU ZhongFang; HU XiaoLi; ZHANG LiPing

    2009-01-01

    CdTe nanocrystals (CdTe NCs) were achieved by reaction of CdCl2 with KHTe solution and were capped with sodium mercaptoacetate. The product was detected by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDS), fluorescence spectra, ultraviolet-visible spectra and X-ray diffraction (XRD). The CdTe NCs are of cubic structure and the average size is about 5 nm. The fluorescence quantum yield of CdTe NCs aqueous solution increased from 37% to 97% after 20 d under room light. The maximum λem of fluorescence changed from 543 nm to 510 nm and the blue shift was 33 nm. CdTe NCs aqueous solution can be steady for at least 10 months at 4℃ in a refrigerator. The resonance Rayleigh scattering (RRS) of CdTe NCs in the aqueous solution was investigated. The maximum scattering peak was located at about 554 nm. The interactions of CdTe NCs with amikacin sulfate (AS) and micronomicin sulfate (MS) were in-vestigated respectively. The effects of AS and MS on fluorescence and RRS of CdTe NCs were analyzed. It was found that AS and MS quenched the photoluminescence of CdTe NCs and enhanced RRS of CdTe NCs. Under optimum conditions, there are linear relationships between quenching intensity (F0-F), intensity of RRS (1-10) and concentration of AS and MS. The detection limits (3σ) of AS and MS are re-spectively 3.4 ng.mL-1 and 2.6 ng.mL-1 by the fluorescence quenching method, and 15.2 ng.mL-1 and 14.0 ng.mL-1 by the RRS method. The methods have high sensitivity, thus CdTe NCs may be used as fluorescence probes and RRS probes for the detection of aminoglycoside antibiotics.

  16. Detection of mercury ions using silver telluride nanoparticles as a substrate and recognition element through surface-enhanced Raman scattering

    Directory of Open Access Journals (Sweden)

    Chia-Wei eWang

    2013-10-01

    Full Text Available In this paper we unveil a new sensing strategy for sensitive and selective detection of Hg2+ through surface-enhanced Raman scattering (SERS using Ag2Te nanoparticles (NPs as a substrate and recognition element and rhodamine 6G (R6G as a reporter. Ag2Te NPs prepared from tellurium dioxide and silver nitrate and hydrazine in aqueous solution containing sodium dodecyl sulfate at 90ºC with an average size of 26.8 ± 4.1 nm (100 counts have strong SERS activity. The Ag2Te substrate provides strong SERS signals of R6G with an enhancement factor of 3.6 × 105 at 1360 cm-1, which is comparable to Ag NPs. After interaction of Ag2Te NPs with Hg2+, some HgTe NPs are formed, leading to decreases in the SERS signal of R6G, mainly because HgTe NPs relative to Ag2Te NPs have weaker SERS activity. Under optimum conditions, this SERS approach using Ag2Te as substrates is selective for the detection of Hg2+, with a limit of detection of 3 nM and linearity over 10-150 nM. The practicality of this approach has been validated for the determination of the concentrations of spiked Hg2+ in a pond water sample.

  17. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    Michael David Petersen

    2001-06-27

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn, Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  18. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    Michael David Petersen

    2001-05-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn,Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  19. Effect of Nanosized Tin Oxide Layer on the Efficiency of Photovoltaic Processes in Film Solar Cells Based on Cadmium Telluride

    Directory of Open Access Journals (Sweden)

    G.S. Khrypunov

    2015-03-01

    Full Text Available The influence of the thickness of the nanosized layer on the efficiency of photoelectric processes in solar cells (SC ITO / SnO2 / CdS / CdTe / Cu / Au formed on different substrates was investigated. For device structures formed on the glass substrates, the maximum efficiency of 11.4 % is achieved when thickness of the tin oxide layer is 80 nm. For flexible solar cells formed on a polyimide film, the maximum efficiency of 10.8 % is observed when thickness of the tin oxide layer is 50 nm. This paper discusses the physical mechanisms of the observed differences in efficiency.

  20. 76 FR 46288 - Adequacy Determination for Colorado Springs, Cañon City, Greeley, Pagosa Springs, and Telluride...

    Science.gov (United States)

    2011-08-02

    ... Rule Amendments (69 FR 40004). In addition, in certain areas with monitored ambient carbon monoxide... timely attainment of the National Ambient Air Quality Standard (NAAQS). The criteria by which we...; Carbon Monoxide and PM 10 Maintenance Plans' Motor Vehicle Emissions Budgets for...

  1. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J U; Mao, D [Colorado School of Mines, Golden, CO (United States)

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  2. Crystal growth and analysis of ohmic contact and magneto-optical isolator properties of cadmium manganese telluride

    Science.gov (United States)

    Prakasam, Mythili; Viraphong, Oudomsack; Teulé-Gay, Lionel; Decourt, Rodolphe; Veber, Philippe; Víllora, Encarnación G.; Shimamura, Kiyoshi

    2011-03-01

    Cd1-xMnxTe (x=0.1, 0.3, 0.5, 0.7 and 0.9) (CMT) single crystals were grown by the vertical Bridgman method. The optical studies reveal that with the increase in Mn concentration, the band gap values increase, which is attributed to s, p-d exchange interaction between the band carriers and Mn ions. Faraday rotation angle of the grown CMT (x=0.5) crystals were measured at the following wavelengths: 825, 1060 and 1575 nm. It was inferred that CMT exhibit larger Faraday effect (3-6 times larger than terbium-gallium garnet (TGG) currently used for optical isolators) making it as an efficient material for optical isolator at longer wavelengths. Field-cooled and zero field-cooled magnetizations of CMT were measured as a function of temperature and magnetic field. The spin-glass like behavior of CMT and their tendency to decrease in magnitude with increasing Mn concentration have been analyzed. The metal contacts on the Cd1-xMnxTe (x=0.1, 0.5, 0.7 and 0.9) crystals have been made with various metals and metal alloys to establish the ohmic contact. The detector characteristics of CMT have been tested using γ-rays with 511 keV (22 Na) and 59.5 keV (241 Am).

  3. An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

    Science.gov (United States)

    Babar, S.; Sellin, P. J.; Watts, J. F.; Baker, M. A.

    2013-01-01

    The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the surface properties of the material. After single crystal fabrication and mechanical polishing, modification of the surface to remove damage and reduce the surface leakage current is generally achieved through chemical etching followed by a passivation treatment. In this work, CdZnTe single crystals have been chemically etched using a bromine in methanol (BM) treatment. The BM concentrations employed were 0.2 and 2.0 (v/v) % and exposure times varied between 5 and 120 s. Angle resolved XPS and sputter depth profiling has been employed to characterize the surfaces for the different exposure conditions. A Te rich surface layer was formed for all exposures and the layer thickness was found to be independent of exposure time. The enriched Te layer thickness was accurately determined by calibrating the sputter rate against a CdTe layer of known thickness. For BM concentrations of 0.2 (v/v) % and 2 (v/v) %, the Te layer thickness was determined to be 1.3 ± 0.2 and 1.8 ± 0.2 nm, respectively. The BM etched surfaces have subsequently been passivated in a 30 wt.% H2O2 solution employing exposure time of 15 s. The oxide layer thickness has been calculated using two standard XPS methodologies, based on the Beer-Lambert expression. The TeO2 thickness calculated from ARXPS data are slightly higher than the thickness obtained by the simplified Beer-Lambert expression. For BM exposures of 30-120 s followed by a passivation treatment of 30 wt. % H2O2 solution employing an exposure time 15 s, the ARXPS method gave an average TeO2 thickness value of 1.20 nm and the simplified Beer-Lambert expression gave an average thickness value of 0.99 nm.

  4. Effects of annealing conditions of electrodes on the photovoltaic properties of sintered cadmium sulfide/cadmium telluride solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, C.S.; Im, H.B. (Korea Advanced Inst. of Science, Seoul (Republic of Korea). Dept. of Materials Science)

    1990-01-01

    Polycrystalline n-CdS/p-CdTe solar cells with a commercial carbon paint on the p-CdTe layer and an In- Ag paint on the n-CdS layer were fabricated by a coating and sintering method. Electrical properties of the conducting paints and solar cell parameters of the heterojunction solar cells were investigated as a function of electrode annealing conditions. The sintered CdS/CdTe solar cells whose electrode contacts were annealed at 350{degrees}C for 10 min in nitrogen showed maximum values of short-circuit current density, fill factor, and solar efficiency. Commercial carbon and silver paints can be used as electrodes to fabricate sintered CdS/CdTe solar cells with efficiency over 10%.

  5. Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells

    Science.gov (United States)

    Marinskiy, Dmitriy Nikolaevich

    1998-12-01

    One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga)Sesb2 solar cells. The study of the optical and structural properties of CdS films deposited by close spaced sublimation as well as their influence on CdS/CdTe solar cell performance is part of the CdTe solar cell program at the University of South Florida. CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in Hsb2 ambient, in CdClsb2 atmosphere, and in atmosphere with small amounts of oxygen. A special annealing chamber was built to carry out the annealing experiments in the presence of CdClsb2 vapor and oxygen. Several CSS chambers were assembled to study the influence of various process parameters simultaneously and validate the results. Results of scanning electron microscopy and photoluminescence measurements have been used as the primary characterization techniques. X-ray diffraction, electron microprobe analysis, and transmission measurements have also been carried out. It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance. CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have been characterized by light and dark current-voltage (I-V) measurements. Based on the I-V results samples were selected for Quantum Efficiency (QE), and I-V-T measurements. The goal of this project was to understand what properties of CdS are important for the formation of a good electrical CdS/CdTe junction and high efficiency solar cells. It was found that passivation of the CdS/CdTe interface is essential to obtain efficient devices. The passivation can be achieved by promoting mixing at the interface or by performing a heat treatment of the CdS surface prior to the CdTe deposition. For the latter case no noticeable intermixing at the CdS/CdTe interface occurs. Therefore, it is suggested that the CdS/CdTe interface is the most critical part of the device and the condition of the CdS surface just before CdTe deposition is one of the factors controlling its formation. To date, the best device has shown an efficiency of 15.1% as verified at the National Renewable Energy Laboratory. It is the highest efficiency reported for an all CSS fabricated solar cell. The best all CSS device fabricated on LOF glass substrate demonstrated an efficiency of 14.3%, which is a new record for the USF solar cell laboratory.

  6. Polycrystalline cadmium telluride n-i-p solar cell: Annual subcontract report, 1 June 1987--31 August 1988

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V.

    1989-06-01

    The CdS/CdTe/ZnTe n-i-p solar cell and its ternary relatives have the potential to meet Department of Energy cost, efficiency, and stability goals. This report describes results of a continuing program to achieve these goals. A record-breaking efficiency of 11% has been demonstrated and verified at the Solar Energy Research Institute (SERI). Stability testing for 3000 hours indicates that the n-i-p structure is stable. Improving the short-circuit current by substituting Cd/sub x/Zn/sub 1-x/S for CdS has been successful and has produced 8+% efficient cells with 2.6 eV windows using improved pyrolysis equipment. Transparent n-i-p devices have been produced with a SERI-verified efficiency of 9.4%. Collaborations with researchers at the Georgia Institute of Technology, the Institute of Energy Conversion, and Jet Propulsion Laboratory have resulted in jointly produced n-i-p cells. Cells produced by molecular beam epitaxy and metal organic chemical vapor deposition had efficiencies greater than 9%; cells produced by thermal vacuum evaporation had efficiencies greater than 7%. 18 refs., 35 figs., 13 tabs.

  7. Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping.

    Science.gov (United States)

    Devender; Gehring, Pascal; Gaul, Andrew; Hoyer, Alexander; Vaklinova, Kristina; Mehta, Rutvik J; Burghard, Marko; Borca-Tasciuc, Theodorian; Singh, David J; Kern, Klaus; Ramanath, Ganpati

    2016-08-01

    Dilute isovalent sulfur doping simultaneously increases electrical conductivity and Seebeck coefficient in Bi2 Te2 Se nanoplates, and bulk pellets made from them. This unusual trend at high electron concentrations is underpinned by multifold increases in electron effective mass attributable to sulfur-induced band topology effects, providing a new way for accessing a high thermoelectric figure-of-merit in topological-insulator-based nanomaterials through doping.

  8. Effect of Annealing On Thin Film Fabrication of Cadmium Zinc Telluride by Single-R.F. Magnetron Sputtering Unit

    Directory of Open Access Journals (Sweden)

    Dr. Monisha Chakraborty A,

    2014-01-01

    Full Text Available In this work, formation of Cd1-xZnxTe thin films under various annealing-environments, created by layer by layer deposition of individual CdTe and ZnTe targets from a Single-R.F. Magnetron Sputtering unit is investigated. Structural and optical characterization results show that Vacuum Annealing is the best suitable for the formation of better Cd1-xZnxTe XRD peaks of higher intensities in comparison to Argon or Nitrogen-Annealing, for a bi-layered deposited CdTe and ZnTe film on glass substrate. The crystallography of the Cd1-xZnxTe films formed appeared to be either Cubic or Rhombohedral type. Also, it has been noticed, that the more inert the annealing-environment is, the lesser is the heat loss by the film-substrate and this results in better fusing of the deposited particles to move more from the poly-crystalline to the mono-crystalline structure. Also higher inert environment causes more Cadmium evaporation and this consequently drives the lattice-constant and the band-gap energy of the formed Cd1-xZnxTe thin film to move from the CdTe side to the ZnTe side. The method developed here with proper annealing ambiance for Cd1-xZnxTe fabrication can be implemented in laboratories lacking in Co-Sputtering machine.

  9. Micro-Raman and UV-VIS Studies of 100 MeV Ni4+ Irradiated Cadmium Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    Neelam Pahwa

    2011-01-01

    Full Text Available CdTe thin films grown by thermal evaporation on quartz substrates were irradiated with Swift (100 MeV Ni 4 + ions for fluences in the range 1.0 × 1011 - 1.0 × 1013 cm – 2. The modification in the structure and optical properties has been studied as a function of ion fluence using Micro-Raman spectroscopy and UV-VIS spectroscopy. In Micro Raman spectrum, weak LO and TO modes of CdTe and A1 & E modes of Te were observed with blue shift which was found to increase with increase in fluence. Intensity of these modes decreased with increase in ion fluence. UV-transmission showed pronounced interference fringes, indicating a good quality of the films. The bandgap was found to increase in the range 1.4-1.75 eV with increase in fluence.

  10. Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation.

    Science.gov (United States)

    Menke, E J; Brown, M A; Li, Q; Hemminger, J C; Penner, R M

    2006-12-01

    Nanowires composed of the thermoelectric material Bi2Te3 were synthesized on highly oriented pyrolytic graphite (HOPG) electrodes using the electrochemical step edge decoration (ESED) method. Nanowire synthesis was initiated by applying a voltage pulse of -0.75 V versus SCE for 5 ms to an HOPG electrode in an aqueous solution containing both Bi3+ and TeO22-, thereby producing nuclei at the step edges. Bi2Te3 was electrodeposited onto these nuclei using a cyclic electrodeposition-stripping scheme that involved the electrodeposition of bismuth-rich Bi2Te3 on a negative-going voltammetric scan (to -0.05 V) and the subsequent anodic stripping of excess bismuth from these nanowires during a positive-going scan (to +0.35 V). When this cycle was repeated 10-50 times, Bi2Te3 nanowires in the 100-300-nm-diameter range were obtained. These nanowires were narrowly dispersed in diameter (RSDdia = 10-20%), were more than 100 microm in length, and were organized into parallel arrays containing hundreds of wires. Smaller nanowires, with diameters down to 30 nm, were obtained by electrooxidizing 150-nm-diameter Bi2Te3 nanowires at +0.37 V under conditions of kinetic control. This oxidation process unexpectedly improved the uniformity of Bi2Te3 nanowires, and X-ray photoelectron spectroscopy (XPS) shows that these nanowires retain a Bi2Te3 core but also have a thin surface layer composed of Bi and Te oxides. The ability of Bi2Te3 nanowires to generate electrical power was assessed by transferring ensembles of these nanowires onto cyanoacrylate-coated glass surfaces and evaporating 4-point nickel contacts. A dimensionless figure of merit, ZT, ranging from 0 to 0.85 was measured for fresh samples that were less than 1 day old. XPS reveals that Bi2Te3 nanowires are oxidized within a week to Bi2O3 and TeO2. These oxides may interfere with the application by evaporation of electrical contacts to these nanowires.

  11. Gated tomographic radionuclide angiography using cadmium-zinc-telluride detector gamma camera; comparison to traditional gamma cameras

    DEFF Research Database (Denmark)

    Jensen, Maria Maj; Schmidt, Ulla; Huang, Chenxi;

    2014-01-01

    PURPOSE: Estimation of left ventricular ejection fraction (LVEF) with equilibrium 99MTc-HSA equilibrium radionuclide angiography (MUGA) is frequently used for assessing cardiac function. The purpose of this study was to compare intra- and interobserver variation between three different gamma...

  12. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A D; Bohn, R G; Contreras-Puente, G [Univ. of Toledo, OH (United States)

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  13. High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y. [Toledo Univ., OH (United States)

    1995-08-01

    This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

  14. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual subcontract report, January 20, 1995--January 19, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A D; Bohn, R G; Contreras-Puente, G [Toledo Univ., OH (United States). Dept. of Physics and Astronomy

    1996-05-01

    This annual report covers the second year of a 3-year NREL subcontract with the University of Toledo that is focused on improvements in efficiency for radio frequency (rf)-sputtered CdS/CdTe solar cells. In earlier work supported by NREL, the University of Toledo established the viability of two new deposition methods for CdS/CdTe solar cells by fabricating cells with efficiencies greater than 10% at air mass (AM) 1.5 on soda lime glass for all-sputtered cells and also for all-laser-deposited cells. Most of the effort has been placed on radio frequency sputtering (RFS) because it was judged to be more economical and more easily scaled to large-area deposition. However, laser physical vapor deposition (LPVD) has remained the method of choice for the deposition of CdCl{sub 2} layers and also for the exploration of new materials such as the ternary alloys including CdS{sub x} Te{sub 1{minus}x} and dopants such as Cu in ZnTe.

  15. Controlled cadmium telluride thin films for solar cell applications. Second quarterly report, September 1-December 1, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Das, M. B.; Krishnaswamy, S. V.

    1981-01-01

    A thermal annealing procedure to improve the photovoltaic and other electrical characteristics of CdTe sputtered films doped with In is described. For an understanding of the characteristics of these films, SEM, Auger electron spectroscopy and scanning ellipsometry analyses have been carried out. Dark and illuminated I/V characteristics and capacitance and conductance vs. frequency behavior of In doped CdTe Schottky barrier diodes based on Cr and Ni substrates indicate that thermal annealing is an effective means of reducing the trap concentrations on these films that can lead to a significant improvement of the quality of sputtered films for solar cell applications.

  16. Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth

    Energy Technology Data Exchange (ETDEWEB)

    Dedi, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences Bandung (Indonesia); Chien, Chia-Hua [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Hsiung, Te-Chih [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Chen, Yu-Chieh; Huang, Yi-Cheng; Lee, Ping-Chung; Chen, Yang-Yuan, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Lee, Chih-Hao [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2014-05-15

    In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited a semiconducting behavior at 50–300 K. An enhancement of electrical conductivity σ up to 2383 S m{sup −1} at 300 K is much higher than σ [0.44–1526 S m{sup −1}, Chen et al., Appl. Phys. Lett. 103, p023115, (2013)] in previous studies. The room temperature magnetoresistance of the 142 nm NW was ∼0.8% at B = 2 T, which is considerably higher than that [0.2% at B = 2 T, Ovsyannikov et al., Sol. State Comm. 126, 373, (2003)] of the PbTe bulk reported.

  17. Palladium telluride quantum dots and cytochrome P450 biosensor for the detection of breast cancer drug – tamoxifen.

    OpenAIRE

    Felini, Usisipho; Beni, Valerio; Iwuoha, Emanuel; Turner, Anthony

    2015-01-01

    Tamoxifen is an oral non-steroidal anti-estrogen drug used in the prevention and treatment of all stages of breast cancer. This drug acts by competing with estrogen for binding to the estrogen receptor (ER) and reduces the transcription of estrogen dependent genes. However, approximately 30-50% of ER-positive breast cancer patients either fail to respond or eventually become resistant to tamoxifen resulting in a serious clinical challenge in breast cancer management. This, therefore, calls fo...

  18. Band gap engineering and \\vec{k}\\cdot \\vec{\\pi } electronic structure of lead and tin tellurides

    Science.gov (United States)

    Behera, S. S.; Tripathi, G. S.

    2016-06-01

    We study the effect of the variation of energy gap on the k\\cdot π electronic structure of PbTe and SnTe, using a six-level basis at the L point. The basis functions in both the systems have the same transformation properties. However, the basis functions of the band edge states in SnTe are reversed with respect to the same in PbTe. Band dispersions are obtained analytically for a two band model. As the band gap decreases, the bands become linear. Far bands are included in the electronic dispersion, using perturbation theory. Fermi energy and the Density of States at the Fermi energy, { D }({\\varepsilon }F), are calculated for different carrier concentrations and energy gaps through a self-consistent approach. Interesting results are seen when the energy gap is reduced from the respective equilibrium values. For both the systems, the Fermi energy increases as the gap is decreased. The behavior of { D }({\\varepsilon }F) is, however, different. It decreases with the gap. It is also on expected lines. Calculated values of the electronic effective mass, as a function of temperature, energy gap and carrier concentration, are compared with previously published data. As distinguished from a first principles calculation, the work has focused on the carrier dependent electronic parameters for use both by theorists and experimenters as well.

  19. Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

    Indian Academy of Sciences (India)

    A U Ubale; R J Dhokne; P S Chikhlikar; V S Sangawar; D K Kulkarni

    2006-04-01

    Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing agent and NH4OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be of the order of 4.11 × 103 -cm at 523 K temperature with an activation energy of ∼ 0.2 eV. The optical absorption studies show that films have direct band gap (1.41 eV).

  20. A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

    Science.gov (United States)

    Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; Li, Qiang; Uher, Ctirad

    2016-05-01

    SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ˜4 μB (Bohr magneton) of magnetic moment to Sn1-xMnxTe. The Curie temperature TC reaches ˜14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.

  1. Effects of nanoassembly on the optoelectronic properties of cadmium telluride - zinc oxide nanocomposite thin films for use in photovoltaic devices

    Science.gov (United States)

    Beal, Russell Joseph

    Quantum-scale semiconductors embedded in an electrically-active matrix have the potential to improve photovoltaic (PV) device power conversion efficiencies by allowing the solar spectral absorption and photocarrier transport properties to be tuned through the control of short and long range structure. In the present work, the effects of phase assembly on quantum confinement effects and carrier transport were investigated in CdTe - ZnO nanocomposite thin films for use as a spectrally sensitized n-type heterojunction element. The nanocomposites were deposited via a dual-source, sequential radio-frequency (RF) sputter technique that offers the unique opportunity for in-situ control of the CdTe phase spatial distribution within the ZnO matrix. The manipulation of the spatial distribution of the CdTe nanophase allowed for variation in the electromagnetic coupling interactions between semiconductor domains and accompanying changes in the effective carrier confinement volume and associated spectral absorption properties. Deposition conditions favoring CdTe connectivity had a red shift in absorption energy onset in comparison to phase assemblies with a more isolated CdTe phase. While manipulating the absorption properties is of significant interest, the electronic behavior of the nanocomposite must also be considered. The continuity of both the matrix and the CdTe influenced the mobility pathways for carriers generated within their respective phases. Photoconductivity of the nanocomposite, dependent upon the combined influences of nanostructure-mediated optical absorption and carrier transport path, increased with an increased semiconductor nanoparticle number density along the applied field direction. Mobility of the carriers in the nanocomposite was further mediated by the interface between the ZnO and CdTe nanophases which acts as a source of carrier scattering centers. These effects were influenced by low temperature annealing of the nanocomposite which served to increase the crystallinity of the phases without modification of the as-deposited phase assembly and associated absorption properties. Integration of the nanocomposite as an n-type heterojunction element into a PV device demonstrated the ability to tune device response based on the spectral absorption of the nanocomposite sensitizer film as dictated by the phase assembly. Overall the various phase assemblies studied provided increased opportunity for optimization of the absorption and carrier transport properties of the nanocomposite thin films.

  2. Special characteristics of fluorescence and resonance Rayleigh scattering for cadmium telluride nanocrystal aqueous solution and its interactions with aminoglycoside antibiotics

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    CdTe nanocrystals(CdTe NCs) were achieved by reaction of CdCl2 with KHTe solution and were capped with sodium mercaptoacetate.The product was detected by transmission electron microscopy(TEM),high-resolution transmission electron microscopy(HRTEM),energy dispersive spectroscopy(EDS),fluorescence spectra,ultraviolet-visible spectra and X-ray diffraction(XRD).The CdTe NCs are of cubic structure and the average size is about 5 nm.The fluorescence quantum yield of CdTe NCs aqueous solution increased from 37% to 97% after 20 d under room light.The maximum λem of fluorescence changed from 543 nm to 510 nm and the blue shift was 33 nm.CdTe NCs aqueous solution can be steady for at least 10 months at 4℃ in a refrigerator.The resonance Rayleigh scattering(RRS) of CdTe NCs in the aqueous solution was investigated.The maximum scattering peak was located at about 554 nm.The interactions of CdTe NCs with amikacin sulfate(AS) and micronomicin sulfate(MS) were investigated respectively.The effects of AS and MS on fluorescence and RRS of CdTe NCs were analyzed.It was found that AS and MS quenched the photoluminescence of CdTe NCs and enhanced RRS of CdTe NCs.Under optimum conditions,there are linear relationships between quenching intensity(F0-F),intensity of RRS(I-I0) and concentration of AS and MS.The detection limits(3б) of AS and MS are respectively 3.4 ng·mL-1 and 2.6 ng·mL-1 by the fluorescence quenching method,and 15.2 ng·mL-1 and 14.0 ng·mL-1 by the RRS method.The methods have high sensitivity,thus CdTe NCs may be used as fluorescence probes and RRS probes for the detection of aminoglycoside antibiotics.

  3. An Effective Approach to Improving Cadmium Telluride (111)A Surface by Molecular-Beam-Epitaxy Growth of Tellurium Monolayer.

    Science.gov (United States)

    Ren, Jie; Fu, Li; Bian, Guang; Su, Jie; Zhang, Hao; Velury, Saavanth; Yukawa, Ryu; Zhang, Longxiang; Wang, Tao; Zha, Gangqiang; Guo, Rongrong; Miller, Tom; Hasan, M Zahid; Chiang, Tai-Chang

    2016-01-13

    The surface cleansing treatment of non-natural cleavage planes of semiconductors is usually performed in vacuum using ion sputtering and subsequent annealing. In this Research Article, we report on the evolution of surface atomic structure caused by different ways of surface treatment as monitored by in situ core-level photoemission measurements of Cd-4d and Te-4d atomic levels and reflection high-energy electron diffraction (RHEED). Sputtering of surface increases the density of the dangling bonds by 50%. This feature and the less than ideal ordering can be detrimental to device applications. An effective approach is employed to improve the quality of this surface. One monolayer (ML) of Te grown by the method of molecular beam epitaxy (MBE) on the target surface with heating at 300 °C effectively improves the surface quality as evidenced by the improved sharpness of RHEED pattern and a reduced diffuse background in the spectra measured by high-resolution ultraviolet photoemission spectroscopy (HRUPS). Calculations have been performed for various atomic geometries by employing first-principles geometry optimization. In conjunction with an analysis of the core level component intensities in terms the layer-attenuation model, we propose a "vacancy site" model of the modified 1 ML-Te/CdTe(111)A (2 × 2) surface. PMID:26672795

  4. Off-stoichiometric silver antimony telluride: An experimental study of transport properties with intrinsic and extrinsic doping

    Directory of Open Access Journals (Sweden)

    Michele D. Nielsen

    2015-05-01

    Full Text Available AgSbTe2 is a thermoelectric semiconductor with an intrinsically low thermal conductivity and a valence band structure that is favorable to obtaining a high thermoelectric figure of merit zT. It also has a very small energy gap Eg ∼ 7.6 ± 3 meV. As this gap is less than the thermal excitation energy at room temperature, near-intrinsic AgSbTe2 is a two carrier system having both holes (concentration p and electrons (n. Good thermoelectric performance requires heavy p-type doping (p > > n. This can be achieved with native defects or with extrinsic doping, e.g. with transition metal element. The use of defect doping is complicated by the fact that many of the ternary Ag-Sb-Te and pseudo-binary Sb2Te3-Ag2Te phase diagrams are contradictory. This paper determines the compositional region most favorable to creating a single phase material. Through a combination of intrinsic and extrinsic doping, values of zT > 1 are achieved, though not on single-phased material. Additionally, we show that thermal conductivity is not affected by defects, further demonstrating that the low lattice thermal conductivity of I-V-VI2 materials is due to an intrinsic mechanism, insensitive to changes in defect structure.

  5. Use of molybdenum telluride as a substrate for the imaging of biological molecules during scanning tunnelling microscopy.

    Science.gov (United States)

    Campbell, S A; Müller, D J; Jungblut, H; Giersig, M; Tomm, Y; Lewerenz, H J

    1994-05-01

    Scanning tunnelling microscopy was used to image biological molecules including supercoiled deoxyribonacetic acid and specific retrovirus enzymes, the reverse transcriptases of the avian myeloblastosis virus, the moloney murine leukaemia virus and the human immunodeficiency virus. Measurements were carried out on graphite and Group VI transition metal dichalcogenide layered crystals. Images obtained with graphite could not be unequivocally interpreted and attachment appears to occur solely at surface defect sites. The layered crystal MoTe2 shows different imaging properties. The bimolecules are clearly visible, distributed over the semiconductor surface, and the molecular shapes and dimensions show good correlation with structure predictions. PMID:7520674

  6. Rich structural phase diagram and thermoelectric properties of layered tellurides Mo1−xNbxTe2

    Directory of Open Access Journals (Sweden)

    Koji Ikeura

    2015-04-01

    Full Text Available MoTe2 is a rare transition-metal ditelluride having two kinds of layered polytypes, hexagonal structure with trigonal prismatic Mo coordination and monoclinic structure with octahedral Mo coordination. The monoclinic distortion in the latter is caused by anisotropic metal-metal bonding. In this work, we have examined the Nb doping effect on both polytypes of MoTe2 and clarified a structural phase diagram for Mo1−xNbxTe2 containing four kinds of polytypes. A rhombohedral polytype crystallizing in polar space group has been newly identified as a high-temperature metastable phase at slightly Nb-rich composition. Considering the results of thermoelectric measurements and the first-principles calculations, the Nb ion seemingly acts as a hole dopant in the rigid band scheme. On the other hand, the significant interlayer contraction upon the Nb doping, associated with the Te p-p hybridization, is confirmed especially for the monoclinic phase, which implies a shift of the p-band energy level. The origin of the metal-metal bonding in the monoclinic structure is discussed in terms of the d electron counting and the Te p-p hybridization.

  7. Rich structural phase diagram and thermoelectric properties of layered tellurides Mo1-xNbxTe2

    Science.gov (United States)

    Ikeura, Koji; Sakai, Hideaki; Bahramy, Mohammad Saeed; Ishiwata, Shintaro

    2015-04-01

    MoTe2 is a rare transition-metal ditelluride having two kinds of layered polytypes, hexagonal structure with trigonal prismatic Mo coordination and monoclinic structure with octahedral Mo coordination. The monoclinic distortion in the latter is caused by anisotropic metal-metal bonding. In this work, we have examined the Nb doping effect on both polytypes of MoTe2 and clarified a structural phase diagram for Mo1-xNbxTe2 containing four kinds of polytypes. A rhombohedral polytype crystallizing in polar space group has been newly identified as a high-temperature metastable phase at slightly Nb-rich composition. Considering the results of thermoelectric measurements and the first-principles calculations, the Nb ion seemingly acts as a hole dopant in the rigid band scheme. On the other hand, the significant interlayer contraction upon the Nb doping, associated with the Te p-p hybridization, is confirmed especially for the monoclinic phase, which implies a shift of the p-band energy level. The origin of the metal-metal bonding in the monoclinic structure is discussed in terms of the d electron counting and the Te p-p hybridization.

  8. Discovery of Isotopes of the Transuranium Elements with 93 <= Z <= 98

    CERN Document Server

    Fry, C

    2012-01-01

    One hundred and five isotopes of the transuranium elements neptunium, plutonium, americium, curium, berkelium and californium have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  9. Influence of post-deposition heat treatment on optical properties derived from UV–vis of cadmium telluride (CdTe) thin films deposited on amorphous substrate

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Annealing-induced change in optical parameters of CdTe film was derived from UV–vis study. • Optical constants of the films were evaluated using Swanepoel method. • Dispersion energy data obeyed the single oscillator of the Wemple−Didomenico model. • Cd deficiency of the film confirmed the p-type conductive nature. - Abstract: In this work, we report on post-deposition heat treatment (annealing)-induced change in optical properties derived from UV–vis study of CdTe thin films prepared on amorphous glass substrate by electron beam evaporation technique. Annealing effect gives rise to the enhancement in crystalline nature (zinc blende structure) of CdTe films with (1 1 1) preferred orientation. The average transmittance was increased with the annealing temperature and the slight shift in transmission threshold towards higher wavelength region revealed the systematic reduction in optical energy band gap. The existence of shallow level just below the conduction band, within the band gap was identified in the range of 0.23 and 0.14 eV for the films annealed at 200 and 450 °C, respectively. The optical quality of deposited films was confirmed by the photoluminescence study. In addition, the scanning electron microscopic measurement supports the result of X-ray diffraction study. The Swanepoel, Hervé-Vandamme, and Wemple−DiDomenico models have been employed to evaluate the various optical parameters of CdTe films. These results are correlated well with other physical properties and discussed with the possible concepts underlying the phenomena

  10. Experimental charge density determination in iso-structural Tellurides: Hf0.85GeTe4 and ZrGeTe4

    International Nuclear Information System (INIS)

    Hf0.85GeTe4 is isostructural with stoichiometric ZrGeTe4 and their crystal structure adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face sharing Hf/Zr-centered bicapped trigonal prisms and corner sharing Ge- centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. Single crystal XRD is used for the refinement of the structural parameters. The space group Cmc21 was considered and the structure was the refined using the harmonic model by the software called JANA2006. The refined structure factors were then subsequently used in MEM (Maximum Entropy Method) technique for the construction of the charge density in the unit cell using software called PRIMA and then visualized with the help of visualization software called VESTA

  11. Pre-chemotherapy values for left and right ventricular volumes and ejection fraction by gated tomographic radionuclide angiography using a cadmium-zinc-telluride detector gamma camera

    DEFF Research Database (Denmark)

    Haarmark, Christian; Haase, Christine; Jensen, Maria Maj;

    2016-01-01

    BACKGROUND: Estimation of left ventricular ejection fraction (LVEF) using equilibrium radionuclide angiography is an established method for assessment of left ventricular function. The purpose of this study was to establish normative data on left and right ventricular volumes and ejection fraction...... age and both left and right ventricular volumes in women (r = -0.4, P cancer patients without other known cardiopulmonary...

  12. Module process optimization and device efficiency improvement for stable, low-cost, large-area, cadmium telluride-based photovoltaic module production

    Science.gov (United States)

    Albright, S. P.; Johnson, S. X.

    1994-06-01

    This report describes work performed under a three-phase subcontract. The objectives of the program include (1) achievement of active-area efficiencies of greater than 14% on small cells; (2) achievement of aperture-area efficiencies of greater than 13% on 0.09-sq m (1 sq ft) modules; (3) achievement of aperture-area efficiencies of greater than 12.5% on 0.37-sq m (4 sq ft) modules; and achievement of greater than 20-year module life (based on life testing extrapolations) with no greater than 10% efficiency degradation. The results obtained and described herein include the following: (1) efficiencies of 12.7% were achieved on small-area devices; (2) 0.09-sq m(1 sq ft) modules achieved greater than 8% aperture-area efficiency, but work for further efficiency improvement was redirected toward the 0.37-sq m(4 sq ft) modules; (3) 0.37-sq m (4 sq ft) modules achieved 26.5-W output, which calculates to 8.0% aperture-area efficiency; (4) consistent prototype production was focused on and substantially achieved within Phase 2; (5) life testing at the National Renewable Energy Laboratory showed no inherent stability problems with the CdTe technology, and the accuracy of module measurement was satisfactorily resolved; and (6) a 'cradle-to-cradle' recycling program was begun based upon the philosophy that the establishment of such mechanisms will be required to ensure maximum recapture and recycling of all manufacturing waste materials and/or modules returned from the field.

  13. Time-dependent toxicity of cadmium telluride quantum dots on liver and kidneys in mice: histopathological changes with elevated free cadmium ions and hydroxyl radicals

    Directory of Open Access Journals (Sweden)

    Wang M

    2016-05-01

    Full Text Available Mengmeng Wang,1,2,* Jilong Wang,1,2,* Hubo Sun,1,2 Sihai Han,3 Shuai Feng,1 Lu Shi,1 Peijun Meng,1,2 Jiayi Li,1,2 Peili Huang,1,2 Zhiwei Sun1,2 1Department of Toxicology and Sanitary Chemistry, School of Public Health, Capital Medical University, 2Beijing Key Laboratory of Environmental Toxicology, Capital Medical University, Beijing, 3College of Food and Bioengineering, Henan University of Science and Technology, Luoyang, People’s Republic of China *These authors contributed equally to this work Abstract: A complete understanding of the toxicological behavior of quantum dots (QDs in vivo is of great importance and a prerequisite for their application in humans. In contrast with the numerous cytotoxicity studies investigating QDs, only a few in vivo studies of QDs have been reported, and the issue remains controversial. Our study aimed to understand QD-mediated toxicity across different time points and to explore the roles of free cadmium ions (Cd2+ and hydroxyl radicals (·OH in tissue damage. Male ICR mice were administered a single intravenous dose (1.5 µmol/kg of CdTe QDs, and liver and kidney function and morphology were subsequently examined at 1, 7, 14, and 28 days. Furthermore, ·OH production in the tissue was quantified by trapping ·OH with salicylic acid (SA as 2,3-dihydroxybenzoic acid (DHBA and detecting it using a high-performance liquid chromatography fluorescence method. We used the induction of tissue metallothionein levels and 2,3-DHBA:SA ratios as markers for elevated Cd2+ from the degradation of QDs and ·OH generation in the tissue, respectively. Our experimental results revealed that the QD-induced histopathological changes were time-dependent with elevated Cd2+ and ·OH, and could recover after a period of time. The Cd2+ and ·OH exhibited delayed effects in terms of histopathological abnormalities. Histological assessments performed at multiple time points might facilitate the evaluation of the biological safety of QDs. Keywords: quantum dot, cadmium ion, metallothionein, hydroxyl radical, toxicity

  14. Interstudy repeatability of left and right ventricular volume estimations by serial-gated tomographic radionuclide angiographies using a cadmium-zinc-telluride detector gamma camera

    DEFF Research Database (Denmark)

    Jensen, Maria M; Haase, Christine; Zerahn, Bo

    2015-01-01

    PURPOSE: Estimation of left ventricular ejection fraction (LVEF) with 99MTc-HSA equilibrium radionuclide angiography (RA) is frequently used for assessing cardiac function. The purpose of this study was to investigate the interstudy repeatability of left (LV) and right (RV) ventricular volume...

  15. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Final technical report, April 9, 1979-April 8, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-06-01

    After a brief review of the work done during the first three quarters, the work done during the last quarter is discussed in detail. In brief, CdTe sputtered self-doped and indium-doped n-type layers on Ni-film on glass have been investigated for film resistivity, contact resistance, Hall mobility and Schottky barrier diode characteristics. Ni has been found to provide satisfactory ohmic contacts and self-doped samples have indicated Hall mobility of approximately 8cm/sup 2//Vsec when the effective doping concentration is approximately 10/sup 18/cm/sup -3/. Use of indium doped sputtered films, when properly surface treated prior to metallization, appear to yield the best kind of Schottky barrier diode with approximate barrier height of 0.77 volt and Richardson constant A* approx. = 60 A/cm/sup 20/K/sup 2/. In spite of these attractive parameter values, these devices showed low V/sub oc/ and the capacitance showed unexpected frequency dependence that require further investigation. Finally suggestions for future work is presented.

  16. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 3, October 9, 1979-January 8, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-02-01

    The main emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined by SEM showing nodular growths under certain conditions. I-V, C-V and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200mV V/sub oc/ and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metallized with Au.

  17. High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  18. Bis(3-methyl-2-pyridyl)ditelluride and pyridyl tellurolate complexes of zinc, cadmium, mercury: Synthesis, characterization and their conversion to metal telluride nanoparticles.

    Science.gov (United States)

    Kedarnath, G; Jain, Vimal K; Wadawale, Amey; Dey, Gautam K

    2009-10-21

    Treatment of an acetonitrile solution of metal chloride with bis(3-methyl-2-pyridyl)ditelluride, [Te(2)(pyMe)(2)], in the same solvent yielded complexes of composition [MCl(2){Te(2)(pyMe)(2)}] (M = Zn or Cd) whereas reactions of [MCl(2)(tmeda)] with NaTepyR (R = H or Me) gave tellurolate complexes of the general formula [M(TepyR)(2)] (M = Cd or Hg). When the cadmium complex [Cd(Tepy)(2)] was crystallized in the presence of excess tmeda, [Cd(Tepy)(2)(tmeda)] was formed exclusively. These complexes were characterized by elemental analyses, uv-vis, (1)H NMR data. The crystal structures of [ZnCl(2){Te(2)(pyMe)(2)}] and [Cd(Tepy)(2)(tmeda)] were established by single crystal X-ray diffraction. In the former zinc is coordinated to nitrogen atoms of the pyridyl group, while in the latter the coordination environment around tetrahedral cadmium is defined by the two neutral nitrogen atoms of tmeda, and two pyridyl tellurolate ligands. Thermal behavior of some of these complexes was studied by thermogravimetric analysis. Pyrolysis of [M(Tepy)(2)] in a furnace or in coordinating solvents such as hexadecylamine/tri-n-octylphosphine oxide (HDA/TOPO) at 350 and 160 degrees C, respectively gave MTe nanoparticles, which were characterized by uv-vis, photoluminiscence, XRD, EDAX and TEM.

  19. Efficient and ultrafast formation of long-lived charge-transfer exciton state in atomically thin cadmium selenide/cadmium telluride type-II heteronanosheets.

    Science.gov (United States)

    Wu, Kaifeng; Li, Qiuyang; Jia, Yanyan; McBride, James R; Xie, Zhao-xiong; Lian, Tianquan

    2015-01-27

    Colloidal cadmium chalcogenide nanosheets with atomically precise thickness of a few atomic layers and size of 10-100 nm are two-dimensional (2D) quantum well materials with strong and precise quantum confinement in the thickness direction. Despite their many advantageous properties, excitons in these and other 2D metal chalcogenide materials are short-lived due to large radiative and nonradiative recombination rates, hindering their applications as light harvesting and charge separation/transport materials for solar energy conversion. We showed that these problems could be overcome in type-II CdSe/CdTe core/crown heteronanosheets (with CdTe crown laterally extending on the CdSe nanosheet core). Photoluminesence excitation measurement revealed that nearly all excitons generated in the CdSe and CdTe domains localized to the CdSe/CdTe interface to form long-lived charge transfer excitons (with electrons in the CdSe domain and hole in the CdTe domain). By ultrafast transient absorption spectroscopy, we showed that the efficient exciton localization efficiency could be attributed to ultrafast exciton localization (0.64 ± 0.07 ps), which was facilitated by large in-plane exciton mobility in these 2D materials and competed effectively with exiton trapping at the CdSe or CdTe domains. The spatial separation of electrons and holes across the CdSe/CdTe heterojunction effectively suppressed radiative and nonradiative recombination processes, leading to a long-lived charge transfer exciton state with a half-life of ∼ 41.7 ± 2.5 ns, ∼ 30 times longer than core-only CdSe nanosheets. PMID:25548944

  20. Removal of CdTe in acidic media by magnetic ion-exchange resin: a potential recycling methodology for cadmium telluride photovoltaic waste.

    Science.gov (United States)

    Zhang, Teng; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste. PMID:25128764

  1. Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

    International Nuclear Information System (INIS)

    Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste

  2. Cadmium telluride quantum dots (CdTe-QDs and enhanced ultraviolet-B (UV-B radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    Directory of Open Access Journals (Sweden)

    Huize Chen

    Full Text Available Nanoparticles (NPs are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs, a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L or UV-B radiation (10 KJ/m(2/d induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions.

  3. Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

    OpenAIRE

    Zayachuka, D. M.; Ilyinaa, O. S.; Pashuka, A. V.; Mikityukb, V. I.; Shlemkevychb, V. V.; Csik, A.; Kaczorowskid, D.

    2014-01-01

    Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm-3 and less is investigated with X-ray fluorescent element analysis, Secondary Neutral Mass Spectroscopy (SNMS), and magnetic measurements. The impurity distributions along and across the doped ingots are established. It is revealed that doping impurity enters into the bulk of doped crystals only if its initial conc...

  4. Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

    Science.gov (United States)

    Zayachuk, D. M.; Ilyina, O. S.; Pashuk, A. V.; Mikityuk, V. I.; Shlemkevych, V. V.; Csik, A.; Kaczorowski, D.

    2013-08-01

    Behavior of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity NEuint(ml) of about 1×1020 cm-3 and less is investigated with X-ray fluorescent element analysis, Secondary Neutral Mass Spectroscopy (SNMS), and magnetic measurements. The impurity distributions along and across the doped ingots are established. It is revealed that doping impurity enters into the bulk of doped crystals only if its initial concentration in the melt is high enough, approximately 1×1020 cm-3. If this concentration is lower, about 1×1019 cm-3 and less, the doping Eu impurity is pushed out onto the surface of doped ingot. The thickness of the doped surface layer is estimated to be in the order of several microns or somewhat more. The longitudinal distributions of Eu impurity along the axis of doped ingot-for NEuint(ml)=1×1020 cm-3, as well as the transverse one in the surface layer where entire doping impurity is pushed out-for NEuint(ml)=1×1019 cm-3, are strongly non-monotonic. Possible reasons for this unusual behavior of Eu doping impurity during the growth of PbTe:Eu crystals from the melt are analyzed.

  5. Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Teng, E-mail: zhangteng@mail.iee.ac.cn; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste.

  6. Synthesis and physical properties of the new layered ternary tellurides MIrTe 4 ( M = Nb, Ta), and the structure of NbIrTe 4

    Science.gov (United States)

    Mar, Arthur; Ibers, James A.

    1992-04-01

    Two new ternary transition-metal chalcogenides, niobium iridium tetratelluride (NbIrTe 4) and tantalum iridium tetratelluride (TaIrTe 4), have been prepared by reaction of the elemental powders at 1000°C. The structure of NbIrTe 4 has been determined by single-crystal X-ray diffraction methods. The compound crystallizes in space group C72 v- Pmn2 1 of the orthorhombic system with four formula units in a cell of dimensions a = 3.768(3), b = 12.486(10), c = 13.077(9) Å at 294 K. NbIrTe 4 is a layered compound with a structure closely related to those of WTe 2 and β-MoTe 2, variants of the CdI 2 structure type. The layers comprise buckled sheets of Te atoms, with the Nb and Ir atoms residing in distorted octahedral sites. Metal-metal bonding appears to be responsible for a close association of the Nb and Ir atoms. From Weissenberg photography, the compound TaIrTe 4 is found to be isostructural to NbIrTe 4, with cell dimensions a = 3.77(3), b = 12.37(6), c = 13.17(3) Å. Electrical resistivity measurements along the a axis of both compounds show that they are metallic: ϱ 298 = 8.1 × 10 -5and 1.2 × 10 -4 Ω cm for NbIrTe 4 and TaIrTe 4, respectively. Magnetic susceptibility measurements indicate essentially temperature-independent Pauli paramagnetism for both compounds: χm = 1.9 × 10 -3 and 8.9 × 10 -4 emu mol -1 for NbIrTe 4 and TaIrTe 4, respectively. The compounds NbIrTe 4 and TaIrTe 4 appear to belong to a larger class of compounds MM'Te 4 with M = Nb, Ta and M' = Ru, Os, Rh, Ir.

  7. Preparation of strongly fluorescent silica nanoparticles of polyelectrolyte-protected cadmium telluride quantum dots and their application to cell toxicity and imaging

    Energy Technology Data Exchange (ETDEWEB)

    Tang Jianhua; Xie Lian; Zhang Bin; Qiu Ting [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China); Qi Bin [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China); College of Chemistry and Chemical Engineering, China West Normal University, Nangchong 637002 (China); Xie Hongping, E-mail: hpxie@suda.edu.cn [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China)

    2012-03-30

    Graphical abstract: The staining effect of the control group (a), QDs-SiO{sub 2} (b) and QDs-PDADMAC-SiO{sub 2}(c). Highlights: Black-Right-Pointing-Pointer The fluorescence intensity of QDs-PDADMAC-SiO{sub 2} is stronger than that of QDs-SiO{sub 2}. Black-Right-Pointing-Pointer The fluorescence stability of QDs-PDADMAC-SiO{sub 2} is better than that of QDs-SiO{sub 2}. Black-Right-Pointing-Pointer The cytotoxicity of QDs-PDADMAC-SiO{sub 2} was lower than that of QDs-SiO{sub 2} Black-Right-Pointing-Pointer The staining effect of QDs-PDADMAC-SiO{sub 2} was much better than that of QDs-SiO{sub 2}. - Abstract: Based on the polyelectrolyte-protected CdTe quantum dots (QDs), which were prepared by self-assembling of QDs and poly-diallyldimethylammonium chloride (PDADMAC) in the help of electrostatic attraction, the strong fluorescence silica nanoparticles (QDs-PDADMAC-SiO{sub 2}) have been prepared via a water-in-oil reverse microemulsion method. Transmission electron microscopy and Zeta potential analysis were used to characterize the as-prepared nanoparticles. All of the particles were almost spherical and there is a uniform distribution of the particle size with the average diameter about 25 nm. There is a large Zeta potential of -35.07 mV which is necessary for good monodispersity of nanoparticles solution. As compared with the QDs coated by SiO{sub 2} (QDs-SiO{sub 2}), the QDs-PDADMAC-SiO{sub 2} nanoparticles have much stronger fluorescence, and their fluorescence stability could be obviously improved. Moreover, QDs-PDADMAC-SiO{sub 2} exhibits good biological compatibility which promotes their application in cellular imaging.

  8. Effects of Long-term exposure of Gelatinated and Non-gelatinated Cadmium Telluride Quantum Dots on Differentiated PC12 cells

    LENUS (Irish Health Repository)

    Prasad, Babu R

    2012-01-20

    Abstract Background The inherent toxicity of unmodified Quantum Dots (QDs) is a major hindrance to their use in biological applications. To make them more potent as neuroprosthetic and neurotherapeutic agents, thioglycolic acid (TGA) capped CdTe QDs, were coated with a gelatine layer and investigated in this study with differentiated pheochromocytoma 12 (PC12) cells. The QD - cell interactions were investigated after incubation periods of up to 17 days by MTT and APOTOX-Glo Triplex assays along with using confocal microscopy. Results Long term exposure (up to 17 days) to gelatinated TGA-capped CdTe QDs of PC12 cells in the course of differentiation and after neurites were grown resulted in dramatically reduced cytotoxicity compared to non-gelatinated TGA-capped CdTe QDs. Conclusion The toxicity mechanism of QDs was identified as caspase-mediated apoptosis as a result of cadmium leaking from the core of QDs. It was therefore concluded that the gelatine capping on the surface of QDs acts as a barrier towards the leaking of toxic ions from the core QDs in the long term (up to 17 days).

  9. Low Temperature Calorimetric Investigation of the Spin Glasses: MERCURY(1-X)MANGANESE(X)TELLURIDE and COBALT(X)GALLIUM(1-X); and of the Compounds: Mercury-Telluride Alpha - Mercury Sulfide, Beta - Mercury Sulfide, THALLIUM(3)ARSENIC SELENIDE(3), THALLIUM(3)ANTIMONY SULFIDE(3), Silver-Thallium - and Silver-Thallium

    Science.gov (United States)

    Akbarzadeh, Hadi

    A systematic study of the low-dc-field magnetic susceptibility and the specific heat has been carried out on mixes Hg(,1-x)Mn(,x)Te crystals, in the composition range 0 (LESSTHEQ) x (LESSTHEQ) 0.35. The alloy with x = 0.35 showed spin-glass behavior below T = 10.9 K. The observed spin-glass phase is ascribed to the frustration of the antiferromagnetic interactions. For x (LESSTHEQ) 0.25, the Hg(,1-x)Mn(,x)Te samples remain paramagnetic down to 1 K. Experimental results for the specific heat and the susceptibility for x 0.52 it also has contributions by the cobalt nuclei, proportional to T('-2), and a spin wave contribution proportional to T('3/2). This last term indicates the coexistence of spin glass and ferromagnetic properties. A simple two level system model fits the spin glass specific heat very well. The agreement between experimental and calculated specific heat shows that individual AS defects are responsible for the thermal properties. To explain hysteresis and remanence objects containing thousands of AS defects have been proposed. On increasing the temperature some objects become unfrozen. We speculate that the individual AS defects in the unfrozen objects can adjust themselves over their own two levels and so contribute to the thermal properties. Specific heats of mercury chalcogenides (HgTe, HgSe, (alpha)-HgS, (beta)-HgS) and red HgI(,2) have been measured in the temperature range of 0.4 - 50 K. All materials display well defined maxima in CT('-3) which indicate the presence of low-lying modes described by Einstein oscillators. The specific heats of Tl(,3)AsSe, Tl(,3)SbS(,3), AgTlS, and AgTlSe have been measured between 1 and 50 K. The Debye temperatures are, respectively: 140, 145, 160, 140 K. Above 2.5 K an additional contribution is noticed which indicates low-lying optical modes.

  10. Neutron multiplicities for the transplutonium nuclides

    International Nuclear Information System (INIS)

    This paper continues, with respect to the transplutonium nuclides, earlier efforts to collate and evaluate data from the scientific literature on the prompt neutron multiplicity distribution from fission and its first moment = ΣnuPnu. The isotopes considered here for which P/sub nu/ and or data (or both) were found in the literature are of americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), and nobelium (No)

  11. Synthesis, crystal structure, and electrical and magnetic properties of BaMo{sub 6}Te{sub 6}: A novel reduced molybdenum telluride containing infinite chains of trans-face shared Mo{sub 6} octahedra

    Energy Technology Data Exchange (ETDEWEB)

    Gall, Philippe; Guizouarn, Thierry; Potel, Michel; Gougeon, Patrick, E-mail: Patrick.Gougeon@univ-rennes1.fr

    2014-12-15

    Powder samples and single crystals of the new ternary compound BaMo{sub 6}Te{sub 6} were obtained by solid state reaction. The structure was determined by single-crystal X-ray diffraction. BaMo{sub 6}Te{sub 6} crystallizes in the hexagonal space group P6{sub 3}/m (No. 176) with unit-cell parameters a=9.3941(2) Å, c=4.5848(1) Å and Z=1. Full-matrix least-squares refinement on F{sup 2} using 452 independent reflections for 17 refinable parameters resulted in R1=0.0208 and wR2=0.0539. The structure consists of one-dimensional infinite chains of trans-face shared Mo{sub 6} octahedra capped by Se atoms. These chains that are running along the c axis are separated from each other by nine-coordinate Ba atoms. Resistivity measurements on a single crystal indicated that the BaMo{sub 6}Te{sub 6} compound is metallic down to 160 K and semiconductor below. Magnetic susceptibility measurements showed that BaMo{sub 6}Te{sub 6} is weakly diamagnetic with no anomaly at the metal–semiconductor transition. - Graphical abstract: We present here the synthesis, the crystal structure, and the electrical and magnetic properties of the new compound BaMo{sub 6}Te{sub 6} containing infinite chains of trans-face shared Mo{sub 6} octahedra. - Highlights: • BaMo{sub 6}Te{sub 6} contains infinite chains of trans-face-sharing Mo{sub 6} octahedra |Mo{sub 6/2}|{sub ∞}{sup 1}. • Synthesis by solid state reaction. • Single-crystal X-ray study. • Continuous metal–nonmetal transition. • Anderson localization.

  12. Development of CMOS Readout Circuits for Mercury Cadmium Telluride Focal Plane Array Devices%碲镉汞焦平面器件CMOS读出电路的发展

    Institute of Scientific and Technical Information of China (English)

    王忆锋; 钱明

    2011-01-01

    通过对近年来的部分文献资料进行归纳分析,介绍了碲镉汞焦平面器件CMOS读出电路(ROIC)的发展动态.讨论了读出电路的有关概念.列出了部分前放电路的单元结构,并分析了它们的工作特点.介绍了积分时间、积分电容以及多路传输等因素对读出电路设计的影响.

  13. Composition containing transuranic elements for use in the homeopathic treatment of aids

    Energy Technology Data Exchange (ETDEWEB)

    Lustig, D.

    1996-04-18

    A homeopathic remedy consisting of a composition containing one or more transuranic elements, particularly plutonium, for preventing and treating acquired immunodeficiency syndrome (AIDS) in humans, as well as seropositivity for human immunodeficiency virus (HIV). Said composition is characterized in that it uses any chemical or isotopic form of one or more transuranic elements (neptunium, plutonium, americium, curium, berkelium, californium or einsteinium), particularly plutonium, said form being diluted and dynamized according to conventional homeopathic methods, particularly the so-called Hahnemann and Korsakov methods, and provided preferably but not exclusively in the form of lactose and/or saccharose globules or granules impregnated with the active principle of said composition. (author).

  14. TOWARD AN IMPROVED UNDERSTANDING OF STRUCTURE AND MAGNETISM IN NEPTUNIUM AND PLUTONIUM PHOSPHONATES AND SULFONATES

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht-Schmitt, Thomas

    2012-03-01

    This grant supported the exploratory synthesis of new actinide materials with all of the actinides from thorium to californium with the exceptions of protactinium and berkelium. We developed detailed structure-property relationships that allowed for the identification of novel materials with selective ion-exchange, selective oxidation, and long-range magnetic ordering. We found novel bonding motifs and identified periodic trends across the actinide series. We identified structural building units that would lead to desired structural features and novel topologies. We also characterized many different spectroscopic trends across the actinide series. The grant support the preparation of approximately 1200 new compounds all of which were structurally characterized.

  15. Detection of rare earth elements in Powder River Basin sub-bituminous coal ash using laser-induced breakdown spectroscopy (LIBS)

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Phuoc [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State; Mcintyre, Dustin [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State

    2015-10-01

    We reported our preliminary results on the use of laser-induced breakdown spectroscopy to analyze the rare earth elements contained in ash samples from Powder River Basin sub-bituminous coal (PRB-coal). We have identified many elements in the lanthanide series (cerium, europium, holmium, lanthanum, lutetium, praseodymium, promethium, samarium, terbium, ytterbium) and some elements in the actinide series (actinium, thorium, uranium, plutonium, berkelium, californium) in the ash samples. In addition, various metals were also seen to present in the ash samples

  16. Composition containing transuranic elements for use in the homeopathic treatment of aids

    International Nuclear Information System (INIS)

    A homeopathic remedy consisting of a composition containing one or more transuranic elements, particularly plutonium, for preventing and treating acquired immunodeficiency syndrome (AIDS) in humans, as well as seropositivity for human immunodeficiency virus (HIV). Said composition is characterized in that it uses any chemical or isotopic form of one or more transuranic elements (neptunium, plutonium, americium, curium, berkelium, californium or einsteinium), particularly plutonium, said form being diluted and dynamized according to conventional homeopathic methods, particularly the so-called Hahnemann and Korsakov methods, and provided preferably but not exclusively in the form of lactose and/or saccharose globules or granules impregnated with the active principle of said composition. (author)

  17. PROCEEDINGS OF THE SYMPOSIUM COMMEMORATING THE 25th ANNIVERSARY OF ELEMENTS 97 and 98 HELD ON JAN. 20, 1975

    Energy Technology Data Exchange (ETDEWEB)

    Seaborg, Glenn T.; Street Jr., Kenneth; Thompson, Stanley G.; Ghiorso, Albert

    1976-07-01

    This volume includes the talks given on January 20, 1975, at a symposium in Berkeley on the occasion of the celebration of the 25th anniversary of the discovery of berkelium and californium. Talks were given at this symposium by the four people involved in the discovery of these elements and by a number of people who have made significant contributions in the intervening years to the investigation of their nuclear and chemical properties. The papers are being published here, without editing, in the form in which they were submitted by the authors in the months following the anniversary symposium, and they reflect rather faithfully the remarks made on that occasion.

  18. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  19. Purification, Growth, Fabrication and Characterization of Wide Bandgap Materials for Gamma-Ray Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arnold Burger, Ph.D.

    1999-04-30

    The objective of this project was to improve the performance and the fabrication of cadmium zinc telluride room temperature gamma ray detetors This paper outlines the necessity for controlled surface preparation and deposition of ohmic contacts.

  20. Tellurite glasses handbook physical properties and data

    CERN Document Server

    El-Mallawany, Raouf AH

    2011-01-01

    This is a useful reference book summarizing all of the published data about the telluride glass system with an emphasis on their optical, thermal and electrical properties.-- Carlo Pantano, Pennsylvania State University

  1. Optimization of CZT Detectors with Sub-mm Pixel Pitches Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop and optimize 0.5 cm thick Cadmium Zinc Telluride (CZT) detectors with very small pixel pitches, i.e. 350 micron and 600 micron. The proposed...

  2. 76 FR 8378 - National Register of Historic Places; Notification of Pending Nominations and Related Actions

    Science.gov (United States)

    2011-02-14

    ..., Richard, House, 3420 Richmond Ave, Mattoon, 11000030 Cook County Brown, Roger, Home and Studio, 1926 N... County Telluride House, 217 West Ave, Ithaca, 11000042 Westchester County Booth, Evangeline, House, 101...

  3. Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Xiupei, E-mail: xiupeiyang@163.com [Chemical Synthesis and Pollution Control Key Laboratory of Sichuan Province, Nanchong 637000 (China); College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000 (China); Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan [College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000 (China)

    2015-06-15

    Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH{sub 3}{sup +} moiety of doxorubicin and the −COO{sup −} moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum.

  4. Information on real-structure phenomena in metastable GeTe-rich germanium antimony tellurides (GeTe){sub n}Sb{sub 2}Te{sub 3} (n ≥ 3) by semi-quantitative analysis of diffuse X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Urban, Philipp; Oeckler, Oliver [Leipzig Univ. (Germany). Faculty of Chemistry and Mineralogy; Schneider, Matthias N.; Seemann, Marten [Munich Univ. (Germany). Dept. of Chemistry; Wright, Jonathan P. [ESRF - The European Synchrotron, Grenoble (France)

    2015-07-01

    Quenching cubic high-temperature polymorphs of (GeTe){sub n}Sb{sub 2}Te{sub 3} (n ≥ 3) yields metastable phases whose average structures can be approximated by the rocksalt type with 1/(n + 3) cation vacancies per anion. Corresponding diffraction patterns are a superposition of intensities from individual twin domains with trigonal average structure but pseudo-cubic metrics. Their four orientations are mirrored in structured diffuse streaks that interconnect Bragg reflections along the [001] directions of individual disordered trigonal domains. These streaks exhibit a ''comet-like'' shape with a maximum located at the low-angle side of Bragg positions (''comet head'') accompanied by a diffuse ''comet tail''. 2D extended cation defect ordering leads to parallel but not equidistantly spaced planar faults. Based on a stacking fault approach, the diffuse scattering was simulated with parameters that describe the overall metrics, the concentration and distribution of cation defect layers, atom displacements in their vicinity and the stacking sequence of Te atom layers around the planar defects. These parameters were varied in order to derive simple rules for the interpretation of the diffuse scattering. The distance between Bragg positions and ''comet heads'' increases with the frequency of planar faults. A sharp distance distribution of the planar faults leads to an intensity modulation along the ''comet tail'' which for low values of n approximates superstructure reflections. The displacement of atom layers towards the planar defects yields ''comets'' on the low-angle side of Bragg positions. A rocksalt-type average structure is only present if the planar defects correspond to missing cation layers in the ''cubic'' ABC stacking sequence of the Te atom layers. An increasing amount of hexagonal ABA transitions around the defect layers leads to increasing broadening and splitting of the Bragg reflections which then overlap with the diffuse scattering. Based on these rules, the diffuse scattering of (GeTe){sub n}Sb{sub 2}Te{sub 3} (n = 2, 4, 5, 12) crystals was analyzed by comparing simulated and experimental reciprocal space sections as well as selected streaks extracted from synchrotron data. With decreasing n, both the average distance between faults and thus the slab thickness decrease, whereas the probability of hexagonal ABA transitions increases. The quenched metastable phases can be understood as intermediates between the stable high-temperature phases, which exhibit a rocksalt-type structure with randomly disordered cations and vacancies on the cation position, and the trigonal layered structures, which are stable at room temperature and consist of distorted rocksalt-type slabs separated by equidistant defect layers.

  5. An atomic beam source for actinide elements: concept and realization

    International Nuclear Information System (INIS)

    For ultratrace analysis of actinide elements and studies of their atomic properties with resonance ionization mass spectroscopy (RIMS), efficient and stable sources of actinide atomic beams are required. The thermodynamics and kinetics of the evaporation of actinide elements and oxides from a variety of metals were considered, including diffusion, desorption, and associative desorption. On this basis various sandwich-type filaments were studied. The most promising system was found to consist of tantalum as the backing material, an electrolytically deposited actinide hydroxide as the source of the element, and a titanium covering layer for its reduction to the metal. Such sandwich sources were experimentally proven to be well suited for the production of atomic beams of plutonium, curium, berkelium and californium at relatively low operating temperatures and with high and reproducible yields. (orig.)

  6. Nuclear fission and the transuranium elements

    Energy Technology Data Exchange (ETDEWEB)

    Seaborg, G.T.

    1989-02-01

    Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs.

  7. Production of transuranium elements

    International Nuclear Information System (INIS)

    The Radiochemical Engineering Development Center (REDC) has the programmatic responsibility for the Department of Energy's Transuranium Element Program. Principle elements from the program are einsteinium, berkelium, and fermium. Targets containing curium oxide mixed with aluminum powder are fabricated by the REDC and irradiated in the Oak Ridge National Laboratory (ORNL) High Flux Isotope Reactor. Following an irradiation period of 6-12 months, targets are returned to the REDC for chemical processing. Processing operations consists of aluminum dejacketing in a caustic-nitrate solution, filtration, acid dissolution, solvent extraction, anion exchange, and finally a cation exchange to recover the actinides. The processing operations take place in heavily shielded hot cell facilities and all operations are carried out remotely. The chemistry for the separations has been well established over the 26-yr. operating life of the facility

  8. Laser space communication experiment: Modulator technology

    Science.gov (United States)

    Goodwin, F. E.

    1973-01-01

    Results are presented of a contractual program to develop the modulator technology necessary for a 10.6 micron laser communication system using cadmium telluride as the modulator material. The program consisted of the following tasks: (1) The growth of cadmium telluride crystals of sufficient size and purity and with the necessary optical properties for use as laser modulator rods. (2) Develop a low loss antireflection coating for the cadmium telluride rods. (3) Design and build a modulator capable of 300 MHz modulation. (4) Develop a modulator driver capable of a data rate of 300 MBits/sec, 12 W rms output power, and 40 percent efficiency. (5) Assemble and test the modulator system. All design goals were met and the system was built and tested.

  9. High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3

    Institute of Scientific and Technical Information of China (English)

    ZHU Pin-Wen; IMAI Yoshio; ISODA Yukihiro; SHINOHARA Yoshikazi; JIA Xiao-Peng; ZOU Guang-Tian

    2005-01-01

    @@ The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride(Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)2Te3 have been studied at room temperature. All the samples exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97 × 10-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of Pb Te.

  10. (AADSF) Advanced Automated Directional Solidification Furnace Onboard STS-87 USMP-4

    Science.gov (United States)

    1997-01-01

    The purpose of the experiments for the Advanced Automated Directional Solidification Furnace (AADSF) is to determine how gravity-driven convection affects the composition and properties of alloys (mixtures of two or more materials, usually metal). During the USMP-4 mission, the AADSF will solidify crystals of lead tin telluride and mercury cadmium telluride, alloys of compound semiconductor materials used to make infrared detectors and lasers, as experiment samples. Although these materials are used for the same type application their properties and compositional uniformity are affected differently during the solidification process.

  11. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  12. Preliminary Results from Small-Pixel CdZnTe and CdTe Arrays

    Science.gov (United States)

    Ramsey, B. D.; Sharma, D. P.; Meisner, J.; Austin, R. A.

    1999-01-01

    We have evaluated 2 small-pixel (0.75 mm) Cadmium-Zinc-Telluride arrays, and one Cadmium-Telluride array, all fabricated for MSFC by Metorex (Finland) and Baltic Science Institute (Riga, Latvia). Each array was optimized for operating temperature and collection bias. It was then exposed to Cadmium-109 and Iron-55 laboratory isotopes, to measure the energy resolution for each pixel and was then scanned with a finely-collimated x-ray beam, of width 50 micron, to examine pixel to pixel and inter-pixel charge collections efficiency. Preliminary results from these array tests will be presented.

  13. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    OpenAIRE

    Anna Maria Mancini; Andrea Zappettini; Ezio Caroli; Leonardo Abbene; Stefano Del Sordo; Pietro Ubertini

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status...

  14. Recent Progress in CdTe and CdZnTe Detectors

    OpenAIRE

    Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises du...

  15. The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

    OpenAIRE

    Bjørk, R.; Nielsen, K K

    2015-01-01

    The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di)selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance...

  16. Surface-mediated structural transformation in CdTe nanoparticles dispersed in SiO2 thin films

    Science.gov (United States)

    Dayal, P. Babu; Mehta, B. R.; Aparna, Y.; Shivaprasad, S. M.

    2002-11-01

    Cadmium telluride nanoparticles dispersed in silicon dioxide thin films have been grown by magnetron sputtering technique followed by thermal annealing. The effect of thermal annealing conditions on the structure of the surface layer and the nanoparticle core has been studied. A structural transformation in the nanoparticle core mediated solely by surface effects has been observed for the first time in any nanoparticle system. The presence of a crystalline cadmium tellurium oxide layer modifies the crystal structure of the cadmium telluride nanoparticle core by introducing a large concentration of stacking faults.

  17. Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5

    OpenAIRE

    Qi, Yanpeng; Shi, Wujun; Naumov, Pavel G.; Kumar, Nitesh; Schnelle, Walter; Barkalov, Oleg,; Shekhar, Chandra; Borrmann, Horst; FELSER, CLAUDIA; Yan, Binghai; Medvedev, Sergey A.

    2016-01-01

    Layered transition-metal tellurides have attracted considerable attention because of their rich physics; for example, tungsten ditelluride WTe2 exhibits extremely large magnetoresistance; the tritelluride ZrTe3 shows a charge density wave transition at low temperature; and the pentatelluride ZrTe5 displays an enigmatic resistivity anomaly and large thermoelectric power. Recently some transition-metal tellurides are predicted to be quantum spin Hall insulators (e.g. ZrTe5 and HfTe5) or Weyl se...

  18. Radiation resistance of thin-film solar cells for space photovoltaic power

    Science.gov (United States)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  19. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2013-08-01

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  20. Microbolometer spectrometer opens hoist of new applications

    NARCIS (Netherlands)

    Leijtens, J.A.P.; Smorenburg, C.; Escudero, I.; Boslooper, E.C.; Visser, H.; Helden, W.A. van; Breussin, F.N.

    2004-01-01

    Current Thermal infra red ( 7..14μm) multispectral imager instruments use cryogenically cooled Mercury Cadmium Telluride (MCT or HgCdTe) detectors. This causes the instruments to be bulky, power hungry and expensive. For systems that have medium NETD (Noise Equivalent Temperature Difference) require

  1. Microbolometer spectrometer: applications and technology

    NARCIS (Netherlands)

    Leijtens, J.A.P.; Court, A.J.; Hoegee, J.

    2004-01-01

    Current Thermal Infra Red (7.14μm) multispectral imager instruments use cryogenically cooled Mercury Cadmium Telluride (MCT or HgCdTe) detectors. Now due to the increased performance of uncooled microbolometer arrays, the next generation of instruments can be designed without cryogenic cooling. TNO

  2. Results of metallographical diagnostic examination of Navy half-watt thermoelectric converters degraded by accelerated tests

    Science.gov (United States)

    Rosell, F. E., Jr.; Rouklove, P. G.

    1977-01-01

    To verify the 15-year reliability of the Navy half-watt radioisotope thermoelectric generator (RTG), bismuth-telluride thermoelectric converters were submitted to testing at high temperatures which accelerated the degradation and caused failure of the converters. Metallographic diagnostic examination of failed units verified failure mechanisms. Results of diagnostic examinations are presented.

  3. An Expeditious Route for the Total Synthesis of Pondaplin Isolated from Annona glabra

    Institute of Scientific and Technical Information of China (English)

    Qian CHENG; Yan Wen ZHANG; Xiang ZHANG; Takayuki ORITANI

    2003-01-01

    A novel cyclic prenylated phenylpropanoid, pondaplin 1, was first synthesized in 26% overall yields through an expeditious route (7 steps) that employed highly regio- and stereoselective phenyltellurenylation to arylacetylene and palladium (II) chloride-catalyzed carbonylation of hydroxy styryl phenyl telluride as key steps.

  4. Upconversion imager measures single mid-IR photons

    DEFF Research Database (Denmark)

    Dam, Jeppe Seidelin; Tidemand-Lichtenberg, Peter; Pedersen, Christian

    2013-01-01

    The most sensitive IR detectors today are based on exotic semicoductor technology such as indium antimonide or mercury cadmium telluride. High quality detectors of these sorts are expensive and suffer from high dark currents. Dark current can be somewhat alleviated by extreme cooling. Comparing t...

  5. Analysis of the internal heat losses in a thermoelectric generator

    DEFF Research Database (Denmark)

    Bjørk, Rasmus; Christensen, Dennis Valbjørn; Eriksen, Dan;

    2014-01-01

    A 3D thermoelectric numerical model is used to investigate different internal heat loss mechanisms for a thermoelectric generator with bismuth telluride p- and n-legs. The model considers all thermoelectric effects, temperature dependent material parameters and simultaneous convective, conductive...

  6. Selenium modified GeTe

    NARCIS (Netherlands)

    Maurugeon, S.; Bureau, B.; Boussard-Plédel, C.; Faber, A.J.; Lucas, P.; Zhang, X.H.; Lucas, J.

    2011-01-01

    This study reports on the synthesis of telluride glasses that have transmission far beyond the second atmospheric window and are stable enough toward crystallisation to be drawn into optical fiber. These glasses are based on the GeTe4 initial composition which has been stabilized by the i

  7. Synthesis and X-ray structures of dilithium complexes of the phosphonate anions [PhP(E)(N(t)Bu)(2)](2-) (E = O, S, Se, Te) and dimethylaluminum derivatives of [PhP(E)(N(t)Bu)(NH(t)Bu)](-) (E = S, Se).

    Science.gov (United States)

    Briand, Glen G; Chivers, Tristram; Krahn, Mark; Parvez, Masood

    2002-12-16

    The dilithium salts of the phosphonate dianions [PhP(E)(N(t)Bu)(2)](2-) (E = O, S, Se) are generated by the lithiation of [PhP(E)(NH(t)Bu)(2)] with n-butyllithium. The formation of the corresponding telluride (E = Te) is achieved by oxidation of [Li(2)[PhP(N(t)Bu)(2)

  8. 78 FR 71550 - Approval and Promulgation of Air Quality Implementation Plans; State of Colorado Second Ten-Year...

    Science.gov (United States)

    2013-11-29

    ... 1990. See 56 FR 56694, 56705, 56736 (November 6, 1991). EPA partially/conditionally approved Colorado's nonattainment area SIP for the Telluride PM 10 nonattainment area on September 19, 1994 (59 FR 47807) and fully approved the SIP on October 4, 1996 (61 FR 51784). On May 10, 2000, the Governor of Colorado submitted...

  9. Intracavity CdTe modulators for CO2 lasers.

    Science.gov (United States)

    Kiefer, J. E.; Nussmeier, T. A.; Goodwin, F. E.

    1972-01-01

    The use of cadmium telluride as an electrooptic material for intracavity modulation of CO2 lasers is described. Included are the predicted and measured effects of CdTe intracavity modulators on laser performance. Coupling and frequency modulation are discussed and experimental results compared with theoretically predicted performance for both techniques. Limitations on the frequency response of the two types of modulation are determined.

  10. Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

    International Nuclear Information System (INIS)

    This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments

  11. Structures and properties of vanadium sulphides

    NARCIS (Netherlands)

    Vries, Ajran Brugt de

    1972-01-01

    The chalcogenides ( sulphides, selenides, tellurides ) of the transition metals have received considerable attention in the last decennia. This is a consequence of the fact that these materials show a great variety of magnetic and electrical properties. The large number of compounds that can occur i

  12. Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS. Application to the effect of hydrogen in CdTe

    Science.gov (United States)

    Hage-Ali, M.; Yaacoub, B.; Mergui, S.; Samimi, M.; Biglari, B.; Siffert, P.

    1991-06-01

    Thermally stimulated current (TSC) and photo-induced current transient spectroscopy (PICTS) methods have been developed for the microscopic defect characterization in semi-insulating compound semiconductors. The capabilities of these methods are demonstrated by investigating the effects of hydrogen implantation or diffusion into semi-insulating cadmium telluride.

  13. Self-Powered Functional Device Using On-Chip Power Generation

    KAUST Repository

    Hussain, Muhammad Mustafa

    2012-01-26

    An apparatus, system, and method for a self-powered device using on-chip power generation. In some embodiments, the apparatus includes a substrate, a power generation module on the substrate, and a power storage module on the substrate. The power generation module may include a thermoelectric generator made of bismuth telluride.

  14. 77 FR 37667 - Notice of Preliminary Permit Application Accepted for Filing and Soliciting Comments, Motions To...

    Science.gov (United States)

    2012-06-22

    ... turbine-generator; (3) a new 2,000-foot-long 12.47-kilovolt primary transmission line connecting the project with Trinidad Municipal Electric Utility's transmission lines; and (4) appurtenant facilities. The... Comments, Motions To Intervene, and Competing Applications; Telluride Energy, LLC On May 17,...

  15. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  16. Measuring Thermal Diffusivity of Molten Semiconductors

    Science.gov (United States)

    Crouch, R.; Holland, L.; Taylor, R. E.

    1986-01-01

    Thermal diffusivity of molten and solid mercury cadmium telluride measured with aid of new apparatus. Knowledge gained from such measurements help efforts to grow high-quality single crystals of this semiconductor for use in infrared detectors: Without knowledge of thermal diffusivity, difficult to control growth rate of solid from molten material.

  17. Nuclear Chemistry Institute, Mainz University. Annual Report 1995

    International Nuclear Information System (INIS)

    The annual report of the Institut fuer Kernchemie addresses inter alia three main research activities. The first belongs to the area of basic research, covering studies in the fields of nuclear fission, chemistry of the super-heavy elements and of heavy-ion reactions extending from the Coulomb barrier to relativistic energies, and nuclear astrophysics in connection with the ''r process''. By means of laser technology, high-precision data could be measured of the ionization energies of berkelium and californium. Studies of atomic clusters in the vacuum of an ionization trap revealed interesting aspects. The second major activity was devoted to the analysis of environmental media, applying inter alia neutron activation analysis and resonance ionization mass spectroscopy (RIMS). The third activity resulted in the development of novel processes, or the enhancement of existing processes or methods, for applications in basic research work and in environmental analytics. Another item of interest is the summarizing report on the operation of the TRIGA research reactor. (orig./SR)

  18. Extraction studies of selected actinide ions from aqueous solutions with 4-benzoyl-2,4-dihydro-5-methyl-2-phenyl-3H-pyrazol-3-thione and tri-n-octylphosphine oxide

    Energy Technology Data Exchange (ETDEWEB)

    Hannink, N.J.; Hoffman, D.C. [Lawrence Berkeley Lab., CA (United States)]|[California Univ., Berkeley, CA (United States). Dept. of Chemistry; Smith, B.F. [Los Alamos National Lab., NM (United States)

    1991-11-01

    The first measurements of distribution coefficients (K{sub d}) for Cm(III), Bk(III), Cf(III), Es(III), and Fm(III) between aqueous perchlorate solutions and solutions of 4-benzoyl-2,4-dihydro-5-methyl-2-phenyl-3H-pyrazol-3-thione (BMPPT) and the synergist tri-n-octylphosphine oxide (TOPO) in toluene are reported. Curium-243, berkelium-250, californium-249, einsteinium-254, and fermium-253 were used in these studies. The K{sub d} for {sup 241}Am was also measured and is in agreement with previously published results. Our new results show that the K{sub d}`s decrease gradually with increasing atomic number for the actinides with a dip at Cf. In general, the K{sub d}`s for these actinides are about a factor of 5 to 10 greater than the K{sub d}`s for the homologous lanthanides at a pH of 2.9, a BMPPT concentration of 0.2 M, and a TOPO concentration of 0.04 M. The larger K{sub d}`s for the actinides are consistent with greater covalent bonding between the actinide metal ion and the sulfur bonding site in the ligand.

  19. Extraction studies of selected actinide ions from aqueous solutions with 4-benzoyl-2,4-dihydro-5-methyl-2-phenyl-3H-pyrazol-3-thione and tri-n-octylphosphine oxide

    Energy Technology Data Exchange (ETDEWEB)

    Hannink, N.J.; Hoffman, D.C. (Lawrence Berkeley Lab., CA (United States) California Univ., Berkeley, CA (United States). Dept. of Chemistry); Smith, B.F. (Los Alamos National Lab., NM (United States))

    1991-11-01

    The first measurements of distribution coefficients (K{sub d}) for Cm(III), Bk(III), Cf(III), Es(III), and Fm(III) between aqueous perchlorate solutions and solutions of 4-benzoyl-2,4-dihydro-5-methyl-2-phenyl-3H-pyrazol-3-thione (BMPPT) and the synergist tri-n-octylphosphine oxide (TOPO) in toluene are reported. Curium-243, berkelium-250, californium-249, einsteinium-254, and fermium-253 were used in these studies. The K{sub d} for {sup 241}Am was also measured and is in agreement with previously published results. Our new results show that the K{sub d}'s decrease gradually with increasing atomic number for the actinides with a dip at Cf. In general, the K{sub d}'s for these actinides are about a factor of 5 to 10 greater than the K{sub d}'s for the homologous lanthanides at a pH of 2.9, a BMPPT concentration of 0.2 M, and a TOPO concentration of 0.04 M. The larger K{sub d}'s for the actinides are consistent with greater covalent bonding between the actinide metal ion and the sulfur bonding site in the ligand.

  20. Extraction studies of selected actinide ions from aqueous solutions with 4-benzoyl-2,4-Dihydro-5-methyl-2-phenyl-3H-pyrazol-3-thione and Tri-n-octylphosphine oxide

    Energy Technology Data Exchange (ETDEWEB)

    Hannink, N.J.; Hoffman, D.C. [Lawrence Berkeley Lab., CA (United States); Smith, B.F. [Los Alamos National Lab., NM (United States)

    1992-07-01

    The first measurements of distribution coefficients (k{sub d}) for Cm(III), Bk(III), Cf(III), Es(III), and Fm(III) between aqueous perchlorate solutions and solutions of 4-benzoyl-2,4-dihydro-5-methyl-2-phenyl-3H-pyrazol-3-thione (BMPPT) and the synergist tri-n-octylphosphine oxide (TOPO) in toluene are reported. Curium-243, berkelium-250, californium-249, einsteinium-254, and fermium-253 were used in these studies. The K{sub d} for {sup 241}Am was also measured and is in agreement with previously published results. Our new results show that the K{sub d}`s decrease gradually with increasing atomic number for the actinides with a dip at Cf. In general, the K{sub d}`s for these actinides are about about a factor of 10 greater than the K{sub d}`s for the homologous lanthanides at a pH of 2.9, a BMPPT concentration of 0.2 M, and a TOPO concentration of 0.04 M. The larger K{sub d}`s for the actinides are consistent with greater covalent bonding between the actinide metal ion and the sulfur bonding site in the ligand. 9 refs., 2 figs., 1 tab.

  1. Characterization of a Viking Blade Fabricated by Traditional Forging Techniques

    Science.gov (United States)

    Vo, H.; Frazer, D.; Bailey, N.; Traylor, R.; Austin, J.; Pringle, J.; Bickel, J.; Connick, R.; Connick, W.; Hosemann, P.

    2016-09-01

    A team of students from the University of California, Berkeley, participated in a blade-smithing competition hosted by the Minerals, Metals, and Materials Society at the TMS 2015 144th annual meeting and exhibition. Motivated by ancient forging methods, the UC Berkeley team chose to fabricate our blade from historical smithing techniques utilizing naturally-occurring deposits of iron ore. This approach resulted in receiving the "Best Example of a Traditional Blade Process/Ore Smelting Technique" award for our blade named "Berkelium." First, iron-enriched sand was collected from local beaches. Magnetite (Fe3O4) was then extracted from the sand and smelted into individual high- and low-carbon steel ingots. Layers of high- and low-carbon steels were forge-welded together, predominantly by hand, to form a composite material. Optical microscopy, energy dispersive spectroscopy, and Vickers hardness mechanical testing were conducted at different stages throughout the blade-making process to evaluate the microstructure and hardness evolution during formation. It was found that the pre-heat-treated blade microstructure was composed of ferrite and pearlite, and contained many nonmetallic inclusions. A final heat treatment was performed, which caused the average hardness of the blade edge to increase by more than a factor of two, indicating a martensitic transformation.

  2. Paul Scherrer Institute Scientific Report 1999. Volume I: Particles and Matter

    International Nuclear Information System (INIS)

    Although originally planned for fundamental research in nuclear physics, the particle beams of pions, muons, protons and neutrons are now used in a large variety of disciplines in both natural science and medicine. The beams at PSI have the world's highest intensities and therefore allow certain experiments to be performed, which would not be possible elsewhere. The highlight of research this year was the first-ever determination of the chemical properties of the superheavy element 107 Bohrium. This was undertaken, by an international team led by H. Gaeggeler of PSI's Laboratory for Radiochemistry. Bohrium was produced by bombarding a Berkelium target with Neon ions from the Injector I cyclotron and six atoms were detected after having passed through an online gas chromatography device. At the Laboratory for Particle Physics the focus has shifted from nuclear physics to elementary particle physics with about a fifty-fifty split between investigations of rare processes or particle decays using the high intensity muon, pion and recently also polarized neutron beams of PSI, and research at the highest energy frontier at CERN (Geneva) and DESY (Hamburg). Important space instrumentation has been contributed by the Laboratory for Astrophysics to the European Space Agency and NASA satellite programmes. The Laboratory for Micro and Nanotechnology continued to focus on research into molecular nanotechnology and SiGeC nanostructures, the latter with the aim of producing silicon based optoelectronics. Progress in 1999 in these topical areas is described in this report. A list of scientific publications in 1999 is also provided

  3. Transmission electron microscope study of the topotactic reaction of (0 0 1), (0 1 1) and (1 1 1) Ag films and Te

    Energy Technology Data Exchange (ETDEWEB)

    Safran, G.; Geszti, O.; Radnoczi, G

    2003-09-01

    The formation, structure and morphology of silver telluride was investigated in the reaction of (0 0 1), (0 1 1) and (1 1 1) single crystalline Ag films with vacuum deposited Te. Silver films 30-40 nm in thickness were deposited by thermal evaporation onto water- and chlorine-treated NaCl. Onto this silver 1-40 nm of tellurium were deposited at 100 and 200 deg. C. The Ag-Te reaction occurred during Te deposition. Accordingly, formation of the compound phase was investigated from the nucleation stage through complete tellurization on either side of the polymorphic phase transformation temperature (T{sub c}=150 deg. C). Transmission electron microscope and selected area electron diffraction showed that monoclinic silver telluride (Ag{sub 2}Te) of different morphology and texture was always formed. The orientation of silver and monoclinic phase upon differently oriented monocrystalline Ag films and at deposition temperatures around T{sub c} is discussed.

  4. Precious metaltellurides and other Te-bearing minerals in different paragenesis of Argentina: A review

    Directory of Open Access Journals (Sweden)

    Milka K de Brodtkorb

    2009-06-01

    Full Text Available Severalpolymetallic deposits containing tellurides and Te-bearing minerals occur indifferent geologic terrains of Argentina. Tellurides with Ag and /or Au arewidespread in meso and epithermal environments; they are structurallycontrolled and genetically related to Jurassic or Miocene-Pliocene volcanism.These species are represented by calaverite, hessite, stützite, krennerite,sylvanite, petzite and cervellite. Other Te-bearing minerals are present notonly in epithermal deposits but also in different assemblages such asintraplutonic W deposits, skarn and mafic-ultramafic bodies. They are Te,altaite, nagyágite, melonite- merenskyite, tetradymite, telurobismuthite,kawazulite, Te-canfieldite and goldfieldite. Paragenesis of the differentdeposits and chemical data of the minerals are given.

  5. Resonant Thermoelectric Nanophotonics

    CERN Document Server

    Mauser, Kelly W; Kim, Seyoon; Fleischman, Dagny; Atwater, Harry A

    2016-01-01

    Photodetectors are typically based on photocurrent generation from electron-hole pairs in semiconductor structures and on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic structures have been successfully used to enhance performance. In this work, we demonstrate subwavelength thermoelectric nanostructures designed for resonant spectrally selective absorption, which creates large enough localized temperature gradients to generate easily measureable thermoelectric voltages. We show that such structures are tunable and are capable of highly wavelength specific detection, with an input power responsivity of up to 119 V/W (referenced to incident illumination), and response times of nearly 3 kHz, by combining resonant absorption and thermoelectric junctions within a single structure, yielding a bandgap-independent photodetection mechanism. We report results for both resonant nanophotonic bismuth telluride-antimony telluride structures and chromel-alumel...

  6. Miniature gamma-ray camera for tumor localization

    International Nuclear Information System (INIS)

    The overall goal of this LDRD project was to develop technology for a miniature gamma-ray camera for use in nuclear medicine. The camera will meet a need of the medical community for an improved means to image radio-pharmaceuticals in the body. In addition, this technology-with only slight modifications-should prove useful in applications requiring the monitoring and verification of special nuclear materials (SNMs). Utilization of the good energy resolution of mercuric iodide and cadmium zinc telluride detectors provides a means for rejecting scattered gamma-rays and improving the isotopic selectivity in gamma-ray images. The first year of this project involved fabrication and testing of a monolithic mercuric iodide and cadmium zinc telluride detector arrays and appropriate collimators/apertures. The second year of the program involved integration of the front-end detector module, pulse processing electronics, computer, software, and display

  7. Internal structure of cesium-bearing radioactive microparticles released from Fukushima nuclear power plant

    Science.gov (United States)

    Yamaguchi, Noriko; Mitome, Masanori; Kotone, Akiyama-Hasegawa; Asano, Maki; Adachi, Kouji; Kogure, Toshihiro

    2016-02-01

    Microparticles containing substantial amounts of radiocesium collected from the ground in Fukushima were investigated mainly by transmission electron microscopy (TEM) and X-ray microanalysis with scanning TEM (STEM). Particles of around 2 μm in diameter are basically silicate glass containing Fe and Zn as transition metals, Cs, Rb and K as alkali ions, and Sn as substantial elements. These elements are homogeneously distributed in the glass except Cs which has a concentration gradient, increasing from center to surface. Nano-sized crystallites such as copper- zinc- and molybdenum sulfide, and silver telluride were found inside the microparticles, which probably resulted from the segregation of the silicate and sulfide (telluride) during molten-stage. An alkali-depleted layer of ca. 0.2 μm thick exists at the outer side of the particle collected from cedar leaves 8 months after the nuclear accident, suggesting gradual leaching of radiocesium from the microparticles in the natural environment.

  8. The heat capacity of zinc and cadmium chalcogenides (ZnTe, CdSe, and CdTe)

    International Nuclear Information System (INIS)

    Heat capacity of zinc telluride, cadmium selenide and telluride are measured by the calorimetry method at 370-640 K (ZnTe) and 500-760 K (CdSe, CdTe). Analysis of literature data on heat capacity of the above-mentioned solid solutions at temperatures in excess of 298 K is carried out. On the basis of the results obtained and most dependable literature data on heat capacity of the compounds for temperature ranges of 220-1500 K (ZnTe, CdSe) and 220-1300 K (CdTe) new equations of heat capacity temperature dependence are suggested and thermodynamic functions of the compounds are calculated

  9. Power generation from thermoelectric system-embedded Plexiglas for green building technology

    KAUST Repository

    Inayat, Salman Bin

    2012-06-09

    Thermoelectric materials embedded through or inside exterior glass windows can act as a viable source of supplemental power in geographic locations where hot weather dominates. This thermoelectricity is generated because of the thermal difference between the high temperature outside and the relatively cold temperature inside. Using physical vapor deposition process, we experimentally verify this concept by embedding bismuth telluride and antimony telluride through the 5 mm Plexiglas to demonstrate 10 nW of thermopower generation with a temperature gradient of 21 °C. Albeit tiny at this point with non-optimized design and development, this concept can be extended for relatively large-scale power generation as an additional power supply for green building technology.

  10. N-type thermoelectric recycled carbon fibre sheet with electrochemically deposited Bi2Te3

    Science.gov (United States)

    Pang, E. J. X.; Pickering, S. J.; Chan, A.; Wong, K. H.; Lau, P. L.

    2012-09-01

    An N-type thermoelectric recycled carbon fibre sheet with bismuth telluride coating has been successfully synthesised through an electro-deposition technique. The Seebeck coefficient and electrical properties of the combined recycled carbon fibre sheet and bismuth telluride films are reported. Classification of the crystal structure, surface morphology and the elemental composition of the resulting deposits are methodically characterised by XRD, SEM and EDX. Cyclic voltammetry is also carried out in nitric acid solutions to investigate the right range of deposition potential. The synthesis N-type thermoelectric sheet has a highest attainable Seebeck coefficient of -54 μV K-1 and an electrical resistivity of 8.9×10-5 Ω m. The results show slight differences in morphologies and thermoelectric properties for the films deposited at varying deposition potential. The increase in thermoelectrical properties of the recycled carbon fibre is in line with the development of using coated recycled fibre for thermoelectrical applications.

  11. Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Guangcan Luo

    2014-01-01

    Full Text Available The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

  12. The effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb$_{\\text{1-x}}$Sn$_{\\text{x}}$Te

    CERN Document Server

    Geilhufe, Matthias; Thomas, Stefan; Däne, Markus; Tripathi, Gouri S; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-01-01

    The electronic structure of Pb$_{1-x}$Sn$_{x}$Te is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations $x$, Pb$_{1-x}$Sn$_{x}$Te is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by the alloy composition. Thus, there is range of potential usage of Pb$_{1-x}$Sn$_{x}$Te for spintronic applications.

  13. The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

    CERN Document Server

    Bjørk, R

    2015-01-01

    The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di)selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance with temperature is shown to dominate the increase in power produced by the TEG, due to the low efficiency of the TEG. For c-Si, CIGS and CdTe PV cells the combined system produces a lower power and has a lower efficiency than the PV alone, whereas for an a-Si cell the total system performance may be slightly increased by the TEG.

  14. Ab initio investigation of the structural and electronic properties of amorphous HgTe

    International Nuclear Information System (INIS)

    We present the structure and electronic properties of amorphous mercury telluride obtained from first-principle calculations. The initial configuration of amorphous mercury telluride is created by computation alchemy. According to different exchange–correlation functions in our calculations, we establish two 256-atom models. The topology of both models is analyzed in terms of radial and bond angle distributions. It is found that both the Te and the Hg atoms tend to be fourfold, but with a wrong bond rate of about 10%. The fraction of threefold and fivefold atoms also shows that there are a significant number of dangling and floating bonds in our models. The electronic properties are also obtained. It is indicated that there is a bandgap in amorphous HgTe, in contrast to the zero bandgap for crystalline HgTe. The structures of the band tail and defect states are also discussed. (paper)

  15. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  16. The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

    DEFF Research Database (Denmark)

    Bjørk, Rasmus; Nielsen, Kaspar Kirstein

    2015-01-01

    The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have ...... efficiency of the TEG. For c-Si, CIGS and CdTe PV cells the combined system produces a lower power and has a lower efficiency than the PV alone, whereas for an a-Si cell the total system performance may be slightly increased by the TEG....... the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di) selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance with temperature is shown to dominate the increase in power produced by the TEG, due to the low...

  17. A Study of the Conservatism of Resonant Shock Test Fixtures

    Energy Technology Data Exchange (ETDEWEB)

    Cap, J.S.

    1998-12-03

    Portions of a series of end-of-life tests are described for a Sandia National Li~boratories- designed space-based sensor that utilizes a mercury-cadmium-telluride focal plane array. Variations in background intensity are consistent with the hypothesis that seasonal variations in solar position cause changes in the pattern of shadows falling across the compartment containing the optical elements, filter-band components, and focal plane array. When the sensor compartment is most fully illuminated by the sun, background intensities are large and their standard deviations tend to be large. During the winter season, when the compartment is most fully shadowed by surrounding structure, backgrounci intensities are small and standard deviations tend to be small. Details in the surrounding structure are speculated to produce transient shadows that complicate background intensifies as a function of time or of sensor position in orbit. KEYwoRDs Noise measurements, background intensity, focal plane array, mercury-cadmium-telluride.

  18. All-dielectric phase-change reconfigurable metasurface

    OpenAIRE

    Karvounis, Artemios; Gholipour, Behrad; MacDonald, Kevin F.; Zheludev, Nikolay I.

    2016-01-01

    We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness films of GST present high-quality resonances that are spectrally shifted by laser-induced structural transitions, providing reflectivity and transmission switching contrast ratios of up to 5:1 at visible/near-infrared wavelengths selected by design.

  19. Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

    OpenAIRE

    Reva V. P.; Golenkov A. G.; Zabudskiy V. V.; Korinets S. V.; Tsybriy Z. F.; Gumenjuk-Sichevska J. V.; Bunchuk S. G.; Apatskaya M. V.; Lysiuk I. А.; Smoliy М. I.

    2010-01-01

    The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor) via indium microcontacts. The measured average value of noise equivalent temperature differe...

  20. Thin film solar cells. (Latest citations from the NTIS bibliographic database). Published Search

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-11-01

    The bibliography contains citations concerning research and development of high-efficiency and low-cost thin film solar cells. References discuss the design and fabrication of silicon, gallium arsenide, copper selenide, indium selenide, cadmium telluride, and copper indium selenide solar cells. Applications in space and utilities are examined. Government projects and foreign technology are also reviewed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  1. Diffusion in semiconductors, other than silicon compilation

    CERN Document Server

    Fisher, David J

    2011-01-01

    Review from Book News Inc.: Summary reports of 337 experiments provide information on the diffusion of matter and heat in 31 materials used in semiconductors. Most of the compounds are based on cadmium, gallium, indium, lead, and zinc. Mercury telluride is included however, as is silicon carbide for some reason. Each article is thoroughly referenced to the authors and publication number, date, and page. The arrangement is alphabetical by semiconductor material. Indexes cover authors, hosts, and diffusants.

  2. Far infrared properties of PbTe doped with cerium

    Energy Technology Data Exchange (ETDEWEB)

    Nikolic, P.M. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia)]. E-mail: nikolic@sanu.ac.yu; Koenig, W. [Max Planck Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80 (Germany); Vujatovic, S.S. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia); Blagojevic, V. [Faculty of Electronic Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade (Serbia); Lukovic, D. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia); Savic, S. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia); Radulovic, K. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia); Urosevic, D. [Mathematical Institute SASA, Knez Mihailova 35/I, 11000 Belgrade (Serbia); Nikolic, M.V. [Center for Multidisciplinary Studies of the University of Belgrade, Kneza Viseslava 1, Belgrade (Serbia)

    2007-05-16

    Single crystal samples of lead telluride doped with cerium were made using the Bridgman method. Far infrared reflectivity spectra in the temperature range from 10 to 300 K are presented. The experimental data were numerically analyzed using a fitting procedure based on the plasmon-phonon interaction model and optical parameters were determined. Two additional local modes were observed at about 138 and 337 cm{sup -1}. The origin of these local vibrational impurity modes was discussed.

  3. Focal Plane Array Sensor for Imaging Infrared Seeker of Antitank Guided Missile

    Directory of Open Access Journals (Sweden)

    A.V.R. Warrier

    1995-07-01

    Full Text Available Technological issues and Processes for fabrication of mercury cadmium telluride detector arrays, charge coupled device readout arrays and integration of these into a focal plane array sensor have been discussed. Mini arrays of 16 X 16 size have been realised and tested to prove the technology and process schedule with a view to scaling up this for larger arrays to be used in the antitank guided missile.

  4. Towards mid-infrared fiber-optic devices and systems for sensing, mapping and imaging

    Science.gov (United States)

    Jayasuriya, D.; Wilson, B.; Furniss, D.; Tang, Z.; Barney, E.; Benson, T. M.; Seddon, A. B.

    2016-03-01

    Novel chalcogenide glass-based fiber opens up the mid-infrared (MIR) range for real-time monitoring and control in medical diagnostics and chemical processing. Fibers with long wavelength cut-off are of interest here. Sulfide, selenide and telluride based chalcogenide glass are candidates, but there are differences in their glass forming region, thermal stability and in the short and long wavelength cut-off positions. In general sulfide and selenide glasses have greater glass stability, but shorter long-wavelength cut-off edge, compared to telluride glasses; selenide-telluride glasses are a good compromise. Low optical loss selenide-telluride based long wavelength fibers could play a substantial role in improving medical diagnostic systems, chemical sensing, and processing, and in security and agriculture. For biological tissue, the molecular finger print lies between ~3-15 μm wavelengths in the MIR region. Using MIR spectral mapping, information about diseased tissue may be obtained with improved accuracy and in vivo using bright broadband MIR super-continuum generation (SCG) fiber sources and low optical loss fiber for routing. The Ge-As-Se-Te chalcogenide glass system is a potential candidate for both MIR SCG and passive-routing fiber, with good thermal stability, wide intrinsic transparency from ~1.5 to 20 μm and low phonon energy. This paper investigates Ge-As-Se-Te glass system pairs for developing high numerical aperture (NA) small-core, step-index optical fiber for MIR SCG and low NA passive step-index optical fiber for an in vivo fiber probe. Control of fiber geometry of small-core optical fiber and methods of producing the glass material are also included in this paper.

  5. Determination voltage applied to an X-ray tube using the spectrum; Determinacao da tensao aplicada em um tubo de raios-X usando o espectro

    Energy Technology Data Exchange (ETDEWEB)

    Albuquerque, M.A.G.; David, M.G.; Almeida, Carlos Eduardo de; Magalhaes, Luis Alexandre Goncalves, E-mail: malbuqueque@hotmail.com [Universidade do Estado do Rio de Janeiro (UERJ), Rio de Janeiro, RJ (Brazil). Lab. de Ciencias Radiologicas; Peixoto, Guilherme [Instituto de Radioprotecao e Dosimetria (IRD/CNEN-RJ), Rio de Janeiro, RJ (Brazil)

    2015-07-01

    This work shows the methodology used to determine the voltage applied in an X-ray tube using their spectra. The measurements were made using a detector Cadmium telluride . Before the measurements are carried out detector was calibrated with a source of {sup 241}Am. After obtaining the spectra , the mean energies were calculated , the electron accelerating potential (k Vp ) of each spectrum is constructed a calibration straight for the kVp this tube. (author)

  6. Recent technological advances in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  7. Polycrystalline thin film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  8. Thermal conductivity in PbTe from first principles

    OpenAIRE

    Romero, A. H.; Gross, E.K.U.; Verstraete, M. J.; Hellman, Olle

    2015-01-01

    We investigate the harmonic and anharmonic contributions to the phonon spectrum of lead telluride and perform a complete characterization of how thermal properties of PbTe evolve as temperature increases. We analyze the thermal resistivitys variationwith temperature and clarify misconceptions about existing experimental literature. The resistivity initially increases sublinearly because of phase space effects and ultra strong anharmonic renormalizations of specific bands. This effect is the s...

  9. Tellurium: providing a bright future for solar energy

    Science.gov (United States)

    Goldfarb, Richard J.

    2015-01-01

    Tellurium is one of the least common elements on Earth. Most rocks contain an average of about 3 parts per billion tellurium, making it rarer than the rare earth elements and eight times less abundant than gold. Grains of native tellurium appear in rocks as a brittle, silvery-white material, but tellurium more commonly occurs in telluride minerals that include varied quantities of gold, silver, or platinum. Tellurium is a metalloid, meaning it possesses the properties of both metals and nonmetals.

  10. Conductivity anisotropy of layered BiTe-SbTe-heterostructures

    International Nuclear Information System (INIS)

    Transport properties of ordered bismuth and antimony tellurides are studied theoretically based on first-principle electronic structure calculations using a screened Korringa-Kohn-Rostoker Greens function method. The anisotropy of the electron mobility both in the bulk materials and in layered BiTe-SbTe-heterostructures is analyzed within the relaxation time approximation of the Boltzmann theory. The influence of doping on the electrical conductivity is discussed applying the rigid band approximation.

  11. Conductivity anisotropy of layered BiTe-SbTe-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yavorsky, Bogdan; Hinsche, Nicki; Zahn, Peter [Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Halle (Germany); Gradhand, Martin; Mertig, Ingrid [Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Halle (Germany); MPI fuer Mikrostrukturphysik, Halle (Germany)

    2010-07-01

    Transport properties of ordered bismuth and antimony tellurides are studied theoretically based on first-principle electronic structure calculations using a screened Korringa-Kohn-Rostoker Greens function method. The anisotropy of the electron mobility both in the bulk materials and in layered BiTe-SbTe-heterostructures is analyzed within the relaxation time approximation of the Boltzmann theory. The influence of doping on the electrical conductivity is discussed applying the rigid band approximation.

  12. Advanced Soldier Thermoelectric Power System for Power Generation from Battlefield Heat Sources

    Energy Technology Data Exchange (ETDEWEB)

    Hendricks, Terry J.; Hogan, Tim; Case, Eldon D.; Cauchy, Charles J.

    2010-09-01

    The U.S. military uses large amounts of fuel during deployments and battlefield operations. This project sought to develop a lightweight, small form-factor, soldier-portable advanced thermoelectric (TE) system prototype to recover and convert waste heat from various deployed military equipment (i.e., diesel generators/engines, incinerators, vehicles, and potentially mobile kitchens), with the ultimate purpose of producing power for soldier battery charging, advanced capacitor charging, and other battlefield power applications. The technical approach employed microchannel technology, a unique “power panel” approach to heat exchange/TE system integration, and newly-characterized LAST (lead-antimony-silver-telluride) and LASTT (lead-antimony-silver-tin-telluride) TE materials segmented with bismuth telluride TE materials in designing a segmented-element TE power module and system. This project researched never-before-addressed system integration challenges (thermal expansion, thermal diffusion, electrical interconnection, thermal and electrical interfaces) of designing thin “power panels” consisting of alternating layers of thin, microchannel heat exchangers (hot and cold) sandwiching thin, segmented-element TE power generators. The TE properties, structurally properties, and thermal fatigue behavior of LAST and LASTT materials were developed and characterized such that the first segmented-element TE modules using LAST / LASTT materials were fabricated and tested at hot-side temperatures = 400 °C and cold-side temperatures = 40 °C. LAST / LASTT materials were successfully segmented with bismuth telluride and electrically interconnected with diffusion barrier materials and copper strapping within the module electrical circuit. A TE system design was developed to produce 1.5-1.6 kW of electrical energy using these new TE modules from the exhaust waste heat of 60-kW Tactical Quiet Generators as demonstration vehicles.

  13. Overview and Challenges of Thin Film Solar Electric Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  14. NCPV preprints for the 2. world conference on photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-09-01

    The proceedings contain 26 papers arranged under the following topical sections: Silicon (3 papers); Thin-film PV technologies (11 papers): amorphous silicon, cadmium telluride, copper indium diselenide, and high efficiency devices; Module and BOS manufacturing (2 papers); Cell, module, and system testing (7 papers); and Market development (3 papers). Selected papers have been indexed separately for inclusion in the Energy Science and Technology Database.

  15. CdTe and CdSe Quantum Dots Cytotoxicity: A Comparative Study on Microorganisms

    OpenAIRE

    Denise Feder; Menna-Barreto, Rubem F. S.; Cesar, Carlos L.; Santos-Mallet, Jacenir R.; Suzete A.O. Gomes; Cecilia Stahl Vieira; Almeida, Diogo B.

    2011-01-01

    Quantum dots (QDs) are colloidal semiconductor nanocrystals of a few nanometers in diameter, being their size and shape controlled during the synthesis. They are synthesized from atoms of group II–VI or III–V of the periodic table, such as cadmium telluride (CdTe) or cadmium selenium (CdSe) forming nanoparticles with fluorescent characteristics superior to current fluorophores. The excellent optical characteristics of quantum dots make them applied widely in the field of life sciences. Cellul...

  16. All-dielectric phase-change reconfigurable metasurface

    Science.gov (United States)

    Karvounis, Artemios; Gholipour, Behrad; MacDonald, Kevin F.; Zheludev, Nikolay I.

    2016-08-01

    We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness films of GST present high-quality resonances that are spectrally shifted by laser-induced structural transitions, providing reflectivity and transmission switching contrast ratios of up to 5:1 (7 dB) at visible/near-infrared wavelengths selected by design.

  17. External Quantum Efficiency Improvement with Luminescent Downshifting Layers: Experimental and Modelling

    OpenAIRE

    Ahmed, H.; S. J. McCormack; Doran, J.

    2016-01-01

    Core-shell quantum dots CdSe/ZnS and lumogen yellow organic dye are characterized by their inclusion in luminescent downshifting (LDS) layers. Layers were deposited on top of crystalline silicon cell (c-Si), dye synthesized solar cell (DSSC), and cadmium telluride (CdTe) minimodules. External quantum efficiency measurements for the solar cell/LDS devices are discussed. Experimental results were compared with an optical model developed by Rothemund, 2014.

  18. Nanoparticle-assisted high photoconductive gain in polymer/fullerene matrix

    OpenAIRE

    Chen, Hsiang-Yu; Lo, Michael K. F.; Yang, Guanwen; Harold G. Monbouquette; Yang, Yang

    2008-01-01

    Polymer/inorganic nanocrystal composites1–10 offer an attractive means to combine the merits of organic and inorganic materials into novel electronic and photonic systems. However, many applications of these composites are limited by the solubility11 and distribution of nanocrystals (NCs) in polymer matrices. Here, a high photoconductive gain has been achieved by blending cadmium telluride (CdTe) nanoparticles (NPs) into a polymer/fullerene matrix followed by a solvent annealing12 process. Th...

  19. Near room temperature X-ray and Gamma ray spectroscopic detectors for future space experiments

    OpenAIRE

    Yadav, J.S.; Savitri, S.; Malkar, J. P.

    2005-01-01

    New generation Cadmium Telluride (CZT & CdTe) solid state detectors can provide high quantum efficiency with reasonably good energy resolution and can operate at near room temperature; an unique advantage for space experiments. We present here results of our study of small diode detectors as well as large area pixel detectors. Our study is aimed at developing near room temperature hard X-ray spectroscopy detectors for ASTROSAT and other future Indian space science missions.We have studied a S...

  20. External Quantum Efficiency Improvement with Luminescent Downshifting Layers: Experimental and Modelling

    Directory of Open Access Journals (Sweden)

    H. Ahmed

    2016-01-01

    Full Text Available Core-shell quantum dots CdSe/ZnS and lumogen yellow organic dye are characterized by their inclusion in luminescent downshifting (LDS layers. Layers were deposited on top of crystalline silicon cell (c-Si, dye synthesized solar cell (DSSC, and cadmium telluride (CdTe minimodules. External quantum efficiency measurements for the solar cell/LDS devices are discussed. Experimental results were compared with an optical model developed by Rothemund, 2014.

  1. Development of fluorescent nanocomposites based on CdTe quantum dots

    OpenAIRE

    Oliveira, Vanessa; Moura, I; Machado, A.V.

    2015-01-01

    Cadmium telluride (CdTe) quantum dots (QDs) are efficient fluorescence semiconductor nanoparticles with unique optical and physicochemical properties. Their incorporation into polymer matrices allows the development of materials with several applications such as in opto-eletronic devices. Nevertheless, one of the most important prerequisite of these high-efficiency nanocomposites is the fluorescence efficiency of the QDs– polymer, which is mainly related with the QDs...

  2. Determining energy production of CdTe photovoltaic system

    OpenAIRE

    Virtič, Peter; Šlamberger, Jan

    2015-01-01

    This paper presents a method for determining energy production of Cadmium-Telluride photovoltaic system, which has a different working performance than the most used Silicon photovoltaic systems. The main difference is sensitivity to the temperature and the solar irradiance. The CdTe cells are less sensitive to the temperature and in contrast to the Si Cells they have a higher efficiency at lower irradiance.

  3. Multifunctional Cu2−xTe Nanocubes Mediated Combination Therapy for Multi-Drug Resistant MDA MB 453

    Science.gov (United States)

    Poulose, Aby Cheruvathoor; Veeranarayanan, Srivani; Mohamed, M. Sheikh; Aburto, Rebeca Romero; Mitcham, Trevor; Bouchard, Richard R.; Ajayan, Pulickel M.; Sakamoto, Yasushi; Maekawa, Toru; Kumar, D. Sakthi

    2016-01-01

    Hypermethylated cancer populations are hard to treat due to their enhanced chemo-resistance, characterized by aberrant methylated DNA subunits. Herein, we report on invoking response from such a cancer lineage to chemotherapy utilizing multifunctional copper telluride (Cu2−XTe) nanocubes (NCs) as photothermal and photodynamic agents, leading to significant anticancer activity. The NCs additionally possessed photoacoustic and X-ray contrast imaging abilities that could serve in image-guided therapeutic studies. PMID:27775048

  4. Optical properties of oxygenated CdTe thin films

    Science.gov (United States)

    Zapata-Navarro, A.; Peña-Chapa, J. L.; Villagrán De León, J. C.

    1996-07-01

    Cadmium telluride oxide films (CdTe-O) were grown by a radio frequency sputtering technique on glass slide substrates using a controlled plasma (Ar-N2O). The films were studied by Auger electron spectroscopy (AES) and optical transmission. We demonstrate that the oxidation process enhances the transmittance of the films into the visible part of the spectrum depending on the oxygen concentration.

  5. Reinforcement of metal with liquid-exfoliated inorganic nano-platelets

    OpenAIRE

    COLEMAN, JONATHAN NESBIT; May, Peter; Khan, Umar

    2013-01-01

    PUBLISHED We have prepared metal matrix composites (MMCs) of a pewter alloy filled with liquid-exfoliated Molybdenum Telluride (MoTe2) nano-platelets. The combination of MoTe2 and pewter was chosen due to their near-identical densities, thus reducing the scope for buoyancy-induced separation during melt mixing. The addition of nanofiller results in a doubling of the Young?s modulus, Y, for a volume fraction, Vf, of

  6. From Selenium- to Tellurium-Based Glass Optical Fibers for Infrared Spectroscopies

    Directory of Open Access Journals (Sweden)

    Jacques Lucas

    2013-05-01

    Full Text Available Chalcogenide glasses are based on sulfur, selenium and tellurium elements, and have been studied for several decades regarding different applications. Among them, selenide glasses exhibit excellent infrared transmission in the 1 to 15 µm region. Due to their good thermo-mechanical properties, these glasses could be easily shaped into optical devices such as lenses and optical fibers. During the past decade of research, selenide glass fibers have been proved to be suitable for infrared sensing in an original spectroscopic method named Fiber Evanescent Wave Spectroscopy (FEWS. FEWS has provided very nice and promising results, for example for medical diagnosis. Then, some sophisticated fibers, also based on selenide glasses, were developed: rare-earth doped fibers and microstructured fibers. In parallel, the study of telluride glasses, which can have transmission up to 28 µm due to its atom heaviness, has been intensified thanks to the DARWIN mission led by the European Space Agency (ESA. The development of telluride glass fiber enables a successful observation of CO2 absorption band located around 15 µm. In this paper we review recent results obtained in the Glass and Ceramics Laboratory at Rennes on the development of selenide to telluride glass optical fibers, and their use for spectroscopy from the mid to the far infrared ranges.

  7. From selenium- to tellurium-based glass optical fibers for infrared spectroscopies.

    Science.gov (United States)

    Cui, Shuo; Chahal, Radwan; Boussard-Plédel, Catherine; Nazabal, Virginie; Doualan, Jean-Louis; Troles, Johann; Lucas, Jacques; Bureau, Bruno

    2013-01-01

    Chalcogenide glasses are based on sulfur, selenium and tellurium elements, and have been studied for several decades regarding different applications. Among them, selenide glasses exhibit excellent infrared transmission in the 1 to 15 µm region. Due to their good thermo-mechanical properties, these glasses could be easily shaped into optical devices such as lenses and optical fibers. During the past decade of research, selenide glass fibers have been proved to be suitable for infrared sensing in an original spectroscopic method named Fiber Evanescent Wave Spectroscopy (FEWS). FEWS has provided very nice and promising results, for example for medical diagnosis. Then, some sophisticated fibers, also based on selenide glasses, were developed: rare-earth doped fibers and microstructured fibers. In parallel, the study of telluride glasses, which can have transmission up to 28 µm due to its atom heaviness, has been intensified thanks to the DARWIN mission led by the European Space Agency (ESA). The development of telluride glass fiber enables a successful observation of CO₂ absorption band located around 15 µm. In this paper we review recent results obtained in the Glass and Ceramics Laboratory at Rennes on the development of selenide to telluride glass optical fibers, and their use for spectroscopy from the mid to the far infrared ranges. PMID:23666005

  8. Tellurium-bearing minerals in zoned sulfide chimneys from Cu-Zn massive sulfide deposits of the Urals, Russia

    Science.gov (United States)

    Maslennikov, V. V.; Maslennikova, S. P.; Large, R. R.; Danyushevsky, L. V.; Herrington, R. J.; Stanley, C. J.

    2013-02-01

    Tellurium-bearing minerals are generally rare in chimney material from mafic and bimodal felsic volcanic hosted massive sulfide (VMS) deposits, but are abundant in chimneys of the Urals VMS deposits located within Silurian and Devonian bimodal mafic sequences. High physicochemical gradients during chimney growth result in a wide range of telluride and sulfoarsenide assemblages including a variety of Cu-Ag-Te-S and Ag-Pb-Bi-Te solid solution series and tellurium sulfosalts. A change in chimney types from Fe-Cu to Cu-Zn-Fe to Zn-Cu is accompanied by gradual replacement of abundant Fe-, Co, Bi-, and Pb- tellurides by Hg, Ag, Au-Ag telluride and galena-fahlore with native gold assemblages. Decreasing amounts of pyrite, both colloform and pseudomorphic after pyrrhotite, isocubanite ISS and chalcopyrite in the chimneys is coupled with increasing amounts of sphalerite, quatz, barite or talc contents. This trend represents a transition from low- to high sulphidation conditions, and it is observed across a range of the Urals deposits from bimodal mafic- to bimodal felsic-hosted types: Yaman-Kasy → Molodezhnoye → Uzelga → Valentorskoye → Oktyabrskoye → Alexandrinskoye → Tash-Tau → Jusa.

  9. Minor Actinide Burning in Thermal Reactors. A Report by the Working Party on Scientific Issues of Reactor Systems

    International Nuclear Information System (INIS)

    The actinides (or actinoids) are those elements in the periodic table from actinium upwards. Uranium (U) and plutonium (Pu) are two of the principal elements in nuclear fuel that could be classed as major actinides. The minor actinides are normally taken to be the triad of neptunium (Np), americium (Am) and curium (Cm). The combined masses of the remaining actinides (i.e. actinium, thorium, protactinium, berkelium, californium, einsteinium and fermium) are small enough to be regarded as very minor trace contaminants in nuclear fuel. Those elements above uranium in the periodic table are known collectively as the transuranics (TRUs). The operation of a nuclear reactor produces large quantities of irradiated fuel (sometimes referred to as spent fuel), which is either stored prior to eventual deep geological disposal or reprocessed to enable actinide recycling. A modern light water reactor (LWR) of 1 GWe capacity will typically discharge about 20-25 tonnes of irradiated fuel per year of operation. About 93-94% of the mass of uranium oxide irradiated fuel is comprised of uranium (mostly 238U), with about 4-5% fission products and ∼1% plutonium. About 0.1-0.2% of the mass is comprised of neptunium, americium and curium. These latter elements accumulate in nuclear fuel because of neutron captures, and they contribute significantly to decay heat loading and neutron output, as well as to the overall radio-toxic hazard of spent fuel. Although the total minor actinide mass is relatively small - approximately 20-25 kg per year from a 1 GWe LWR - it has a disproportionate impact on spent fuel disposal, and thus the longstanding interest in transmuting these actinides either by fission (to fission products) or neutron capture in order to reduce their impact on the back end of the fuel cycle. The combined masses of the trace actinides actinium, thorium, protactinium, berkelium and californium in irradiated LWR fuel are only about 2 parts per billion, which is far too low for

  10. Actinide production in the reaction of heavy ions with curium-248

    International Nuclear Information System (INIS)

    Chemical experiments were performed to examine the usefulness of heavy ion transfer reactions in producing new, neutron-rich actinide nuclides. A general quasi-elastic to deep-inelastic mechanism is proposed, and the utility of this method as opposed to other methods (e.g. complete fusion) is discussed. The relative merits of various techniques of actinide target synthesis are discussed. A description is given of a target system designed to remove the large amounts of heat generated by the passage of a heavy ion beam through matter, thereby maximizing the beam intensity which can be safely used in an experiment. Also described is a general separation scheme for the actinide elements from protactinium (Z=91) to mendelevium (Z=101), and fast specific procedures for plutonium, americium and berkelium. The cross sections for the production of several nuclides from the bombardment of 248Cm with 18O, 86Kr and 136Xe projectiles at several energies near and below the Coulomb barrier were determined. The results are compared with yields from 48Ca and 238U bombardments of 248Cm. Simple extrapolation of the product yields into unknown regions of charge and mass indicates that the use of heavy ion transfer reactions to produce new, neutron-rich above-target species is limited. The substantial production of neutron-rich below-target species, however, indicates that with very heavy ions like 136Xe and 238U the new species 248Am, 249Am and 247Pu should be produced with large cross sections from a 248Cm target. A preliminary, unsuccessful attempt to isolate 247Pu is outlined. The failure is probably due to the half life of the decay, which is calculated to be less than 3 minutes. The absolute gamma ray intensities from 251Bk decay, necessary for calculating the 251Bk cross section, are also determined

  11. Paul Scherrer Institute Scientific Report 1999. Volume I: Particles and Matter

    Energy Technology Data Exchange (ETDEWEB)

    Gobrecht, J.; Gaeggeler, H.; Herlach, D.; Junker, K.; Kettle, P.-R.; Kubik, P.; Zehnder, A. [eds.

    2000-07-01

    lthough originally planned for fundamental research in nuclear physics, the particle beams of pions, muons, protons and neutrons are now used in a large variety of disciplines in both natural science and medicine. The beams at PSI have the world's highest intensities and therefore allow certain experiments to be performed, which would not be possible elsewhere. The highlight of research this year was the first-ever determination of the chemical properties of the superheavy element {sup 107} Bohrium. This was undertaken, by an international team led by H. Gaeggeler of PSI's Laboratory for Radiochemistry. Bohrium was produced by bombarding a Berkelium target with Neon ions from the Injector I cyclotron and six atoms were detected after having passed through an online gas chromatography device. At the Laboratory for Particle Physics the focus has shifted from nuclear physics to elementary particle physics with about a fifty-fifty split between investigations of rare processes or particle decays using the high intensity muon, pion and recently also polarized neutron beams of PSI, and research at the highest energy frontier at CERN (Geneva) and DESY (Hamburg). Important space instrumentation has been contributed by the Laboratory for Astrophysics to the European Space Agency and NASA satellite programmes. The Laboratory for Micro and Nanotechnology continued to focus on research into molecular nanotechnology and SiGeC nanostructures, the latter with the aim of producing silicon based optoelectronics. Progress in 1999 in these topical areas is described in this report. A list of scientific publications in 1999 is also provided.

  12. Transuranium Processing Plant semiannual report of production, status, and plans for period ending December 31, 1975

    Energy Technology Data Exchange (ETDEWEB)

    King, L.J.; Bigelow, J.E.; Collins, E.D.

    1976-10-01

    Between July 1, 1975, and December 31, 1975, maintenance was conducted at TRU for a period of three months, 295 g of curium oxide (enough for approximately 26 HFIR targets) were prepared, 100 mg of high-purity /sup 248/Cm, were separated from /sup 252/Cf that had been purified during earlier periods, 11 HFIR targets were fabricated, and 28 product shipments were made. No changes were made in the chemical processing flowsheets normally used at TRU during this report period. However, three equipment racks were replaced (with two new racks) during this time. In Cubicle 6, the equipment replaced was that used to decontaminate the transplutonium elements from rare earth fission products and to separate curium from the heavier elements by means of the LiCl-based anion-exchange process. In Cubicle 5, the equipment used to separate the transcurium elements by high-pressure ion exchange and to purify berkelium by batch solvent extraction was replaced. Two neutron sources were fabricated, bringing the total fabricated to 79. One source that had been used in a completed project was returned to the TRU inventory and is available for reissue. Three sources, for which no further use was foreseen, were processed to isolate and recover the ingrown /sup 248/Cm and the residual /sup 252/Cf. Eight pellets, each containing 100 ..mu..g of high-purity /sup 248/Cm were prepared for irradiation in HFIR to study the production of /sup 250/Cm. The values currently being used for transuranium element decay data and for cross-section data in planning irradiation-processing cycles, calculating production forecasts, and assaying products are tabulated.

  13. Platinum mineralization in the Kapalagulu Intrusion, western Tanzania

    Science.gov (United States)

    Wilhelmij, Harry R.; Cabri, Louis J.

    2016-03-01

    . Impersistent, stratiform PGE mineralized horizons occur within the MCSS harzburgite from which drill core samples were taken for platinum-group mineral (PGM) characterization from two drill holes. Where the PGE reefs reach the surface there is residual PGE mineralization within the laterite regolith from which drill core samples were taken from various laterite lithological units for PGM characterization. As the harzburgite PGE reefs contain significant concentrations of both sulfide and chromite (including chromitite seams) they resemble the PGE-rich chromitite seams of the Bushveld Complex rather than the PGE-bearing Main Sulfide Zone of the Great Dyke and Main Sulfide Layer of the Munni Munni Complex. The dominant Pd PGM in three PGE reef samples varies, ranging ( n = 164, relative wt%) from bismuthides (63 %), bismuthtellurides (19 %), and tellurides (6 %), to tellurides (39 %), bismuthtellurides (24 %), stannides (14 %), and alloys (13 %), and to antimon-arsenides (33 %), stannides (21 %), bismuthides (17 %), tellurides (13 %), and alloys (10 %). From 13.5 % to 21.0 % of the total Pd occurs as a solid solution in pentlandite. The three samples have similar Pt PGM modal distributions ( n = 172, relative wt%); the dominant Pt mineral is sperrylite (79, 58, and 47 %) followed by tellurides (15, 17, 21 %), alloys (2, 1, 1 %), and sulfides (2, 1, 0 %). Comparison of Pd/Pt ratios from assays to those calculated from minerals show that the data for the Pt and Pd PGM are very robust, confirming the concentration methodology and characterization. Study of samples from a shallow drill hole penetrating the laterite regolith shows that the primary Pd mineralization has not survived oxidation, is mainly dispersed, but some was reconstituted to form secondary minerals: cabriite, unnamed tellurides, a selenide, a Pd-Te-Hg mineral, alloys and Pd-bearing secondary sulfides (millerite and heazlewoodite). The primary Pt minerals are more resistant to oxidation and dissolution, especially

  14. New Perspectives in Thermoelectric Energy Recovery System Design Optimization

    Science.gov (United States)

    Hendricks, Terry J.; Karri, Naveen K.; Hogan, Tim P.; Cauchy, Charles J.

    2013-07-01

    It is highly desirable to develop technologies that recover the large amounts of waste heat generated worldwide in industrial processes, automotive transportation, diesel engine exhaust, military generators, and incinerators to increase fuel efficiency and reduce CO2 production and the environmental footprint of these applications. Recent work has investigated new thermoelectric (TE) materials and systems that can operate at higher performance levels and show a viable pathway to lightweight, small-form-factor, advanced thermoelectric generator (TEG) systems to recover waste heat in many of these applications. New TE materials include nanocomposite materials such as lead-antimony-silver-telluride (LAST) and lead-antimony-silver-tin-telluride (LASTT) compounds. These new materials have created opportunities for high-performance, segmented-element TE devices. New higher-performance TE devices segmenting LAST/LASTT materials with bismuth telluride have been designed and fabricated. Sectioned TEG systems using these new TE devices and materials have been designed. Integrated heat exchanger/TE device system analyses of sectioned TE system designs have been performed, creating unique efficiency-power maps that provide better understanding and comparisons of design tradeoffs and nominal and off-nominal system performance conditions. New design perspectives and mathematical foundations in optimization of sectioned TE design approaches are discussed that provide insight on how to optimize such sectioned TE systems. System performance analyses using ANSYS® TE modeling capabilities have integrated heat exchanger performance models with ANSYS® TE models to extend its analysis capabilities beyond simple constant hot-side and cold-side temperature conditions. Analysis results portray external resistance effects, matched load conditions, and maximum power versus maximum efficiency points simultaneously, and show that maximum TE power occurs at external resistances slightly

  15. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung [Yonsei University, Wonju (Korea, Republic of)

    2012-07-15

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radio pharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  16. Textural, mineralogical and stable isotope studies of hydrothermal alteration in the main sulfide zone of the Great Dyke, Zimbabwe and the precious metals zone of the Sonju Lake Intrusion, Minnesota, USA

    Science.gov (United States)

    Li, C.; Ripley, E.M.; Oberthur, T.; Miller, J.D., Jr.; Joslin, G.D.

    2008-01-01

    Stratigraphic offsets in the peak concentrations of platinum-group elements (PGE) and base-metal sulfides in the main sulfide zone of the Great Dyke and the precious metals zone of the Sonju Lake Intrusion have, in part, been attributed to the interaction between magmatic PGE-bearing base-metal sulfide assemblages and hydrothermal fluids. In this paper, we provide mineralogical and textural evidence that indicates alteration of base-metal sulfides and mobilization of metals and S during hydrothermal alteration in both mineralized intrusions. Stable isotopic data suggest that the fluids involved in the alteration were of magmatic origin in the Great Dyke but that a meteoric water component was involved in the alteration of the Sonju Lake Intrusion. The strong spatial association of platinum-group minerals, principally Pt and Pd sulfides, arsenides, and tellurides, with base-metal sulfide assemblages in the main sulfide zone of the Great Dyke is consistent with residual enrichment of Pt and Pd during hydrothermal alteration. However, such an interpretation is more tenuous for the precious metals zone of the Sonju Lake Intrusion where important Pt and Pd arsenides and antimonides occur as inclusions within individual plagioclase crystals and within alteration assemblages that are free of base-metal sulfides. Our observations suggest that Pt and Pd tellurides, antimonides, and arsenides may form during both magmatic crystallization and subsolidus hydrothermal alteration. Experimental studies of magmatic crystallization and hydrothermal transport/deposition in systems involving arsenides, tellurides, antimonides, and base metal sulfides are needed to better understand the relative importance of magmatic and hydrothermal processes in controlling the distribution of PGE in mineralized layered intrusions of this type. ?? Springer-Verlag 2007.

  17. Class I Areas at Risk: Event-Based Nitrogen Deposition to a High-Elevation, Western Site

    Directory of Open Access Journals (Sweden)

    Mark W. Williams

    2001-01-01

    Full Text Available Between June 1, 2000 and September 30, 2000, 32 precipitation events were sampled near Telluride, CO at an elevation of 3200 m. The wet deposition site was operated following protocols of the Atmospheric Integrated Research Monitoring Network (AIRMoN, a network of the National Atmospheric Deposition Network (NADP. Inorganic nitrogen deposition at the Telluride site of 1.41 kg ha-1 during the study period was 25 to 50% higher than nearby NADP sites. In turn, nitrogen deposition at these NADP sites was similar to high-elevation sites in and near the Colorado Front Range that have been shown to be impacted by atmospheric deposition of inorganic nitrogen in wetfall. Power plant emissions are a likely source of a major portion of this elevated inorganic nitrogen in wetfall to the San Juan Mountains. Principal component analysis (PCA shows that solutes formed by gases that are emitted from power plants were clustered tightly together, including nitrate, ammonium, sulfate, and chloride. Trajectory analysis, including both backward and forward trajectories, shows that the air masses that contributed to the precipitation events with high amounts of nitrogen deposition at the Telluride site passed directly over or near power plants. Our results suggest that Class I Wilderness Areas in and near the San Juan Mountains are at risk to ecosystem impairment at present rates of atmospheric deposition of inorganic nitrogen in wetfall. Deployment of proposed power plants to this area will likely increase the risk of degradation of resource values in nearby Class I areas. While these data were collected over a short time span, they indicate that establishment of an official AIRMoN site in the southwestern U.S. may be warranted.

  18. Chalcogenides Metastability and Phase Change Phenomena

    CERN Document Server

    Kolobov, Alexander V

    2012-01-01

    A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.

  19. Development of Scintillators in Nuclear Medicine.

    Science.gov (United States)

    Khoshakhlagh, Mohammad; Islamian, Jalil Pirayesh; Abedi, Seyed Mohammad; Mahmoudian, Babak

    2015-01-01

    High-quality image is necessary for accurate diagnosis in nuclear medicine. There are many factors in creating a good image and detector is the most important one. In recent years, several detectors are studied to get a better picture. The aim of this paper is comparison of some type of these detectors such as thallium activated sodium iodide bismuth germinate cesium activated yttrium aluminum garnet (YAG: Ce) YAP: Ce "lutetium aluminum garnet activated by cerium" CRY018 "CRY019" lanthanum bromide and cadmium zinc telluride. We studied different properties of these crystals including density, energy resolution and decay times that are more important factors affecting the image quality. PMID:26420984

  20. Strontium coprecipitation with individual and mixed hydroxides of some metals

    International Nuclear Information System (INIS)

    Using the method of radioactive indicators and studing coprecipitation of strontium with a great number of metal hydroxides under comparative conditions, it is ascertained that strontium is not coprecipitated with cadmium, zinc, magnesium, lead, telluride(4), aluminium, bismuth hydroxides over the whole range of pH studied. The value of strontium coprecipitation with other hydroxides increases with an increase in ionic potentials of the corresponding metals in the following sequence: La< Y< Co< Ni< In< Zr< Fe< Sn(4)< Sb(5). It is shown that acid-basic interaction between sorption and sorbent lies in the basis of sorption of the element small amounts by metal hdroxides

  1. Looking for new market niches; Neue Nischen gesucht

    Energy Technology Data Exchange (ETDEWEB)

    Schwarzburger, Heiko

    2013-05-15

    The past year was difficult for the solar industry. The German government policy does not promote large-scale solar power plants anymore. The feed-in tariff was reduced for solar power plants less than 10 megawatts. Nevertheless, large-scale solar power plants are built. However, for example, the solar power plant Turnow II uses 230,000 thin-film modules from First Solar (Tempe, Arizona, USA) as well as 24 central inverters from SMA (Niestetal, Federal Republic of Germany). The investment volume amounts to 37 million Euro. Thin-film modules consisting of cadmium telluride and copper indium compound semiconductors make the race.

  2. Applications of thin-film photovoltaics for space

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  3. Thin-Film Photovoltaics: Status and Applications to Space Power

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  4. MicroCT with energy-resolved photon-counting detectors

    OpenAIRE

    Wang, X.; Meier, D.; Mikkelsen, S.; Maehlum, G E; Wagenaar, D J; Tsui, BMW; Patt, B E; Frey, E. C.

    2011-01-01

    The goal of this paper was to investigate the benefits that could be realistically achieved on a microCT imaging system with an energy-resolved photon-counting x-ray detector. To this end, we built and evaluated a prototype microCT system based on such a detector. The detector is based on cadmium telluride (CdTe) radiation sensors and application-specific integrated circuit (ASIC) readouts. Each detector pixel can simultaneously count x-ray photons above six energy thresholds, providing the c...

  5. Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

    Directory of Open Access Journals (Sweden)

    Reva V. P.

    2010-08-01

    Full Text Available The results of investigation of developed thermal imager for middle (3—5 µm infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor via indium microcontacts. The measured average value of noise equivalent temperature difference was NETD= 20±4 mK (background radiation temperature T = 300 K, field of view 2θ = 180°, the cooled diaphragm was not used.

  6. Effect of Substrate Temperature on Structural and Morphological Parameters Of ZnTe Thin Films

    Directory of Open Access Journals (Sweden)

    K.D. Patel

    2011-01-01

    Full Text Available Vacuum evaporated thin films of Zinc Telluride (ZnTe of 5000 Å thickness have been deposited on glass substrates at different substrate temperatures (303 K, 373 K, 448 K. Structural parameters were obtained using XRD analysis. Atomic Force Microscope (AFM in non-contact mode has been used to study the surface morphological properties of the deposited thin films. The results obtained from structural and surface morphological studies have been correlated and it is found that the films deposited at higher substrate temperatures possess increasingly good crystallinity and smoother surfaces.

  7. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A. [Departamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco C.P. 44430 (Mexico); Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, D.F., C.P. 11801 (Mexico); Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O. [Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, D. F. C.P. 07360 (Mexico); Hernández-Hernández, A. [Escuela Superior de Apan, Universidad Autónoma del Estado de Hidalgo, Calle Ejido de Chimalpa Tlalayote s/n Colonia Chimalpa, Apan Hidalgo (Mexico); Moure-Flores, F. de [Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro C.P. 76010 (Mexico)

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  8. CYCLIC VOLTAMMETRY STUDIES OF COPPER (II) AND TELLURIUM (IV) IONS IN ACIDIC AQUEOUS SOLUTIONS FOR THIN FILM DEPOSITION

    OpenAIRE

    SARAVANAN NAGALINGAM; GEOK BEE TEH

    2014-01-01

    Cyclic voltammetry studies of copper (II) and tellurium (IV) ions in acidic aqueous solutions were carried out to determine the optimum condition for copper telluride thin film deposition. The voltammetry studies include reversible scans at different solution pH. Based on the voltammogram, suitable deposition conditions was determined to be in the range of -0.35 V to -0.45 V versus Ag/AgCl at pH values between 2.0 to 2.2 under non diffusion-limited conditions.

  9. Dual radioisotopes simultaneous SPECT of 99mTc-tetrofosmin and 123I-BMIPP using a semiconductor detector

    OpenAIRE

    Yasuyuki Takahashi; Masao Miyagawa; Yoshiko Nishiyama; Naoto Kawaguchi; Hayato Ishimura; Teruhito Mochizuki

    2015-01-01

    Objective(s): The energy resolution of a cadmium-zinc-telluride (CZT) solid-state semiconductor detector is about 5%, and is superior to the resolution of the conventional Anger type detector which is 10%. Also, the window width of the high-energy part and of the low-energy part of a photo peak window can be changed separately. In this study, we used a semiconductor detector and examined the effects of changing energy window widths for 99mTc and 123 I simultaneous SPECT. ...

  10. Cu6Te3S. A Cu-filled Cr3Si-structure variant

    International Nuclear Information System (INIS)

    A solid state melting and annealing route was used to prepare Cu6Te3S, a copper telluride sulfide representing a filled variant of the Cr3Si structure type. The title compound exhibits a reversible phase transition at 404 K which was confirmed by thermal analysis, temperature dependent X-ray single crystal and powder diffractometry. Both polymorphs crystallize cubic in space groups P anti 43n and P213, respectively. X-ray photoelectron spectroscopy (XPS) was performed to evaluate the electronic structure of Cu6Te3S and to determine the oxidation state of Cu in the title compound.

  11. Solvothermal Synthesis and Characterization of HgTe Nanoplatelets Using Mercury(Ⅰ) Source

    Institute of Scientific and Technical Information of China (English)

    WU Ke-Jun; WANG Ming-Sheng; ZOU Jian-Ping; XU Gang; DING Tong-Yong; GUO Guo-Cong; HUANG Jin-Shun

    2008-01-01

    Mercury telluride (HgTe) nanoplatelets were obtained via a facile solvothermal reaction of mercury(Ⅰ) chloride and tellurium powder in ethylenediamine (en). Mercury(Ⅰ) was first applied as the mercury sources to prepare nanocrystal HgTe; moreover, the proposed mechanism for the fabrication of the sample was discussed in detail. The HgTe nanoplatelets were characterized by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM),transmission electron microscopy (TEM), high-resolution transmission electron microscopy(HRTEM) and Fourier transform infrared spectroscopy (FT-IR). The absence of IR absorption may render the title nanocrystal useful as an IR transparent material in the region.

  12. Multivariate analysis of pixelated diffraction data

    International Nuclear Information System (INIS)

    A novel pixelated ASIC detector using Cadmium Telluride is applied to a combined energy dispersive- and angular dispersive- X-ray diffraction system. This system is designed to obtain multiple diffraction signatures of powdered materials simultaneously. The diffraction data is analyzed using multivariate partial least squares regression utilizing the diffraction spectra at multiple scatter angles, and material concentration in a three-way regression analysis. The calibration models are used to predict unknown samples, and show that utilizing the angular information can help improve concentration prediction in samples of mixtures and has potential in material identification systems.

  13. Wide-field electrographic cameras for imagery and spectrography at visual and middle-UV wavelengths. [for astronomical observations

    Science.gov (United States)

    Heckathorn, H. M.; Carruthers, G. R.; Shulman, S. D.

    1979-01-01

    The use of a Kron electrographic detector for wide-field, narrow-band imagery of faint emission nebulosity in the near-UV and visual (3100-6000 A) wavelength interval is described. As an example of the photometric quality of the imagery and of the sensitivity of the instrumentation to diffuse, low-contrast objects, imagery of the Cygnus Loop supernova remnant in the high excitation forbidden line of Ne V 3426 A is presented. In addition, a program to develop electrographic detectors which use cesium telluride photocathodes for broad-band imagery and spectrography in the middle-UV (1650-3100 A) wavelength range is described.

  14. Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

    Energy Technology Data Exchange (ETDEWEB)

    Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R., E-mail: rafaelp@yandex.ru; Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V. [Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation); Mikhailov, N. N.; Dvoretsky, S. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-12-15

    The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

  15. Coal mining applications of CdTe gamma ray sensors

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G.; Tiernan, T.; Waer, P.; Hazlett, T. (Radiation Monitoring Devices, Inc., Watertown, MA (USA))

    1990-01-01

    Cadmium telluride (CdTe) solid-state radiation detectors have been used in the development of instrumentation that improves the efficiency of coal-mining operations by helping to locate coal seams and preventing the mining of high-sulfur coal near the edges of the seam. CdTe detectors were selected for these applications because while they are small and durable, they offer good stopping power, deliver adequate spectral response and operate at low voltage. These CdTe-based instruments have passed the mine-safety standards and are now in operation in the mine. (author).

  16. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  17. Double-phase-conjugate mirror in CdTe:V with elimination of conical diffraction at 1.54 microm.

    Science.gov (United States)

    Martel, G; Wolffer, N; Moisan, J Y; Gravey, P

    1995-04-15

    We have fabricated a double-phase-conjugate mirror (DPCM) in a single crystal of vanadium-doped cadmium telluride. Because of the high gain in the near-infrared region, a DPCM is possible at a telecommunication wavelength of 1.54 microm in this material. Experimental and theoretical thresholds for the DPCM are compared, and an experimental diffraction efficiency of 7.4% is reported. Conical diffraction has been eliminated by the method of cylindrical lenses. We propose to use this astigmatic configuration to enhance the capacity of interconnections between fibers with a single crystal in a vector-matrix architecture. PMID:19859380

  18. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    OpenAIRE

    Claudio Davet Gutiérrez-Lazos; Mauricio Ortega-López; Pérez-Guzmán, Manuel A; A. Mauricio Espinoza-Rivas; Francisco Solís-Pomar; Rebeca Ortega-Amaya; L. Gerardo Silva-Vidaurri; Virginia C. Castro-Peña; Eduardo Pérez-Tijerina

    2014-01-01

    This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis i...

  19. A Prototype Si/CdTe Compton Camera and the Polarization Measurement

    OpenAIRE

    Mitani, Takefumi; Tanaka, Takaaki; Nakazawa, Kazuhiro; Takahashi, Tadayuki; Takashima, Takeshi; Tajima, Hiroyasu; Nakamura, Hidehito; Nomachi, Masaharu; Nakamoto, Tatsuya; Fukazawa, Yasushi

    2004-01-01

    A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor detectors such as silicon, germanium and cadmium telluride(CdTe) have several advantages over scintillation detectors, which have been used so far. Based on the recent advances of high resolution CdTe and silicon imaging detectors, we are working on a Si/Cd...

  20. Selective growth of CdTe on patterned CdTe/Si(211)

    OpenAIRE

    Seldrum, T.; Bommena, R.; Samain, Louise; Sivananthan, S.; Sporken, R.; Dumont, J.

    2008-01-01

    The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTe/As/Si(211). Photoemission microscopy was used as the main tool to study selective growth. This is very powerful because Si or SiO2 can be very easily distinguished from areas covered with even small amounts of CdTe due to contrast from work function differences. It was found that CdTe grows on CdTe without sticki...

  1. Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues

    Science.gov (United States)

    Ren, Jie; Bian, Guang; Fu, Li; Liu, Chang; Wang, Tao; Zha, Gangqiang; Jie, Wanqi; Neupane, Madhab; Miller, T.; Hasan, M. Z.; Chiang, T.-C.

    2014-11-01

    Cadmium telluride (CdTe), a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. We report herein a study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. Through a theoretical simulation a topological phase transition as well as the Dirac-Kane semimetal phase at the critical point was demonstrated in the mixed compound H gxC d1 -xTe .

  2. Influence of temperature on the synthesis of thiol-stabilized CdTe nanoparticles in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Khalavka, Y.; Okrepka, G.; Shcherbak, L.; Panchuk, O. [Chernivtsi National University (ChNU), Chernivtsi (Ukraine); Mingler, B. [Physik Nanostrukturierter Materialien, Fakultaet fuer Physik, Universitaet Wien (Austria); Health and Environment Department, AIT Austrian Institute of Technology GmbH, Wiener Neustadt (Austria); Friedbacher, G. [Institute of Chemical Technology and Analytics, Vienna University of Technology (Austria)

    2010-02-15

    We have investigated the evolution of thiol-capped cadmium telluride nanocrystals prepared in aqueous solutions at low and room temperature followed by heating at 50-100 C. The UV-visible absorption spectra, as well as transmission electron microscopy, atomic force microscopy, and dynamic light scattering observations made it possible to reveal differences in size and structure originating from different heating temperatures. It was shown that minimization of the nucleation process temperature provided formation of larger nanoparticles than at higher temperatures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  3. Synthesis and characterization of Bi-Te-Se thermoelectric materials

    International Nuclear Information System (INIS)

    Bismuth Telluride (Bi2Te3) and its related alloys act as a promising thermoelectric material and preferred over other thermoelectric materials due to their high stability and efficiency under ambient conditions. In the present work, we have reported economical, environment friendly and low-temperature aqueous chemical method for the synthesis of Bi-Se-Te alloy. The prepared samples are characterized by X-Ray Diffraction to investigate the structural properties and UV-Visible spectroscopy for the spectroscopic analysis. The absorption spectrum reveals the sensitivity in the ultraviolet as well as in visible region

  4. Two CdZnTe detector-equipped gamma-ray spectrometers for attribute measurements on irradiated nuclear fuel

    International Nuclear Information System (INIS)

    Some United States Department of Energy-owned spent fuel elements from foreign research reactors (FRRs) are presently being shipped from the reactor location to the US for storage at the Idaho National Engineering and Environmental Laboratory (INEEL). Two cadmium zinc telluride detector-based gamma-ray spectrometers have been developed to confirm the irradiation status of these fuels. One spectrometer is configured to operate underwater in the spent fuel pool of the shipping location, while the other is configured to interrogate elements on receipt in the dry transfer cell at the INEEL's Interim Fuel Storage Facility (IFSF) Both units have been operationally tested at the INEEL. (author)

  5. Two CdZnTe Detector-Equipped Gamma-ray Spectrometers for Attribute Measurements on Irradiated Nuclear Fuel

    International Nuclear Information System (INIS)

    Some United States Department of Energy-owned spent fuel elements from foreign research reactors (FRRs) are presently being shipped from the reactor location to the US for storage at the Idaho National Engineering and Environmental Laboratory (INEEL). Two cadmium zinc telluride detector-based gamma-ray spectrometers have been developed to confirm the irradiation status of these fuels. One spectrometer is configured to operate underwater in the spent fuel pool of the shipping location, while the other is configured to interrogate elements on receipt in the dry transfer cell at the INEEL's Interim Fuel Storage Facility (IFSF). Both units have been operationally tested at the INEEL

  6. A layered antiferromagnetic semiconductor EuMTe{sub 3} (M = Bi, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Ying Y.; Wu, Dong; Shen, Liang; Wang, Biao [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275 (China)

    2015-12-15

    We synthesized ternary tellurides EuMTe{sub 3} (M = Bi, Sb) using a low-temperature flux method. These compounds crystallize in the P{sub mmn} space group with layered structure. A superstructure modulation along the b-axis was observed. Physical property measurements revealed that these compounds are antiferromagnetic semiconductors. Finally, a strong spin-orbit coupling with possible novel quantum interference between localization and weak antilocalization effects was suggested in the present system. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Efficient photocatalytic degradation of rhodamine 6G with a quantum dot-metal organic framework nanocomposite.

    Science.gov (United States)

    Kaur, Rajnish; Vellingiri, Kowsalya; Kim, Ki-Hyun; Paul, A K; Deep, Akash

    2016-07-01

    The hybrid structures of metal organic frameworks (MOFs) and nanoparticles may offer the realization of effective photocatalytic materials due to combined benefits of the porous and molecular sieving properties of MOF matrix and the functional characteristics of encapsulated nanoparticles. In this study, cadmium telluride (CdTe) quantum dots (QD) are conjugated with a europium-MOF for the synthesis of a novel nanocomposite material with photocatalytic properties. Successful synthesis of a QD/Eu-MOF nanocomposite was characterized with various spectroscopic and microscopic techniques. This QD/Eu-MOF is found to be an effective catalyst to complete the degradation of Rhodamine 6G dye within 50 min. PMID:27101017

  8. DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

    OpenAIRE

    Hossain, M S; Islam, R.; Khan, K. A.

    2011-01-01

    Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at at...

  9. Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

    Science.gov (United States)

    Kinsey, Geoffrey S.

    2015-09-01

    Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

  10. Skylab experiments on semiconductors and alkali halides. [single crystal growth

    Science.gov (United States)

    Lundquist, C. A.

    1974-01-01

    The space processing experiments performed during the Skylab missions included one on single crystal growth of germanium selenide and telluride, one on pure and doped germanium crystals, two on pure and doped indium antimonide, one on gallium-indium-antimony systems, and one on a sodium chloride-sodium fluoride eutectic. In each experiment, three ampoules of sample were processed in the multipurpose electric furnace within the Skylab Materials Processing Facility. All were successful in varying degrees and gave important information about crystal growth removed from the effects of earth surface gravity.

  11. Environmental benefits of parking-integrated photovoltaics: A 222kWp experience

    DEFF Research Database (Denmark)

    Serrano-Luján, Lucía; García-Valverde, Rafael; Espinosa, Nieves;

    2015-01-01

    The life cycle assessment of a grid-connected, parking integrated, 222kWp cadmium telluride photovoltaic system has been performed. The system was built at the University of Murcia and has been monitored for 2.5years (sampling data every 5min). The detailed material inventory, the energy embedded...... integration (in this case parking integration) have been quantified using a standard methodology for the calculation of several environmental parameters. Finally, the environmental benefits of renewable energy generation because of the savings of producing the same amount of electricity by the Spanish grid...

  12. Thermoelectric Power Conversion System Combined with LNG Vaporizer

    Science.gov (United States)

    Kambe, Mitsuru; Morita, Ryo; Omoto, Kazuyuki; Koji, Yasuhiro; Yoshida, Tatsuo; Noishiki, Koji

    A conceptual design of the thermoelectric power conversion system combined with open rack type LNG (liquefied natural gas) vaporizer to make use of cold heat of LNG is presented. The system performance analysis has been made based on the thermoelectric module performance data obtained at the cryogenic thermoelectric (CTE) test rig which could realize temperature and fluid dynamic condition of the open rack type LNG vaporizer. Conventional bismuth-telluride thermoelectric modules were tested, however, each module is encapsulated in the stainless steel container to achieve water proof. Electricity production cost evaluation of the system is also discussed.

  13. Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Kroposki, B.; Strand, T.; Hansen, R. [National Renewable Energy Lab., Golden, CO (United States); Powell, R.; Sasala, R. [Solar Cells, Inc., Toledo, OH (United States)

    1996-05-01

    The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

  14. Progress and issues in polycrystalline thin-film PV technologies

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.; Ullal, H.S.; Roedern, B. von [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  15. Simulated performance of a position sensitive radiation detecting system (COCAE)

    CERN Document Server

    Karafasoulis, K; Seferlis, S; Kaissas, I; Lambropoulos, C; Loukas, D; Poritiriadis, C

    2011-01-01

    Extensive simulations of a portable radiation detecting system have been performed in order to explore important performance parameters. The instrument consists of a stack of ten detecting layers made of pixelated Cadmium Telluride (CdTe) crystals. Its aim is to localize and identify radiation sources, by exploiting the Compton imaging technique. In this paper we present performance parameters based on simulation studies. Specifically the ratio of incompletely absorbed photons, the detector's absolute efficiency as well as its energy and angular resolution are evaluated in a wide range of incident photon energies.

  16. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    M. Rigana Begam

    2013-07-01

    Full Text Available Nanocrystalline Cadmium Telluride (CdTe thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111 preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decreased from 2.87 eV to 2.05 eV with the increase of the crystallite size.

  17. An optical and structural investigation into CdTe nanocrystals embedded into the tellurium lithium borophosphate glass matrix

    Institute of Scientific and Technical Information of China (English)

    WAGEH; S

    2010-01-01

    Cadmium telluride nanocrystals that form in the TeO2-Li2O-B2O3-P2O5 glass matrix have been synthesized and studied.They are investigated by X-ray diffraction(XRD),optical transmission and infrared spectroscopy.It has been shown that the long annealing time effect on present samples leads to the growth of CdTe nanoparticles and an increase of tellurium oxide on the surface of nanocrystallites.On the other hand,the infrared spectroscopy shows that the phosphate and borate networks of the glass matrices are modified with doping by CdTe nanoparticles.

  18. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  19. CYCLIC VOLTAMMETRY STUDIES OF COPPER (II AND TELLURIUM (IV IONS IN ACIDIC AQUEOUS SOLUTIONS FOR THIN FILM DEPOSITION

    Directory of Open Access Journals (Sweden)

    SARAVANAN NAGALINGAM

    2014-05-01

    Full Text Available Cyclic voltammetry studies of copper (II and tellurium (IV ions in acidic aqueous solutions were carried out to determine the optimum condition for copper telluride thin film deposition. The voltammetry studies include reversible scans at different solution pH. Based on the voltammogram, suitable deposition conditions was determined to be in the range of -0.35 V to -0.45 V versus Ag/AgCl at pH values between 2.0 to 2.2 under non diffusion-limited conditions.

  20. Coal mining applications of CdTe gamma ray sensors

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) solid-state radiation detectors have been used in the development of instrumentation that improves the efficiency of coal-mining operations by helping to locate coal seams and preventing the mining of high-sulfur coal near the edges of the seam. CdTe detectors were selected for these applications because while they are small and durable, they offer good stopping power, deliver adequate spectral response and operate at low voltage. These CdTe-based instruments have passed the mine-safety standards and are now in operation in the mine. (author)