Titanium carbide coatings on molybdenum by means of reactive sputtering and electron beam techniques

International Nuclear Information System (INIS)

Obata, T.; Aida, H.; Hirohata, Y.; Mohri, M.; Yamashina, T.

1982-01-01

This study is an experimental investigation of TiC coatings on Mo substrate by means of a reactive r.f. sputtering in the presence of CH 4 and a chemical reaction with interdiffusion in the sandwich structure of Ti/C/Mo by electron beam evaporation and heating. Using the reactive sputtering method, a homogeneous TiC coating with stoichiometric composition and good adhesion could be produced in the conditions of the partial pressure range of CH 4 , 2 approx. equal to 5 x 10 -4 Torr (total pressure, Psub(Ar) + Psub(CH) 4 = 5.6 x 10 -2 Torr) at 300 0 C (substrate). By using the electron beams, successively evaporated carbon and Ti on a Mo substrate was heated to 700 0 C to form a TiC surface layer on the top which then remained stable during further heating to 1000 0 C. Godd adhesion was brought about by interdiffusion to produce Mo 2 C layer between TiC layer and Mo substrate. It was also found that further heating of the coating layers subsequent to Ti evaporation on the TiC layer produced thicker TiC layer due to a chemical reaction between Ti and inner carbon layers. This could be a promising method of in situ replenishment for TiC coatings on the first wall and the limiter materials. (orig.)

Ion beam and dual ion beam sputter deposition of tantalum oxide films

Science.gov (United States)

Cevro, Mirza; Carter, George

1994-11-01

Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

Science.gov (United States)

Cevro, Mirza; Carter, George

1995-02-01

Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

Nanopatterning of swinging substrates by ion-beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

2016-05-28

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

Nanopatterning of swinging substrates by ion-beam sputtering

International Nuclear Information System (INIS)

Yoon, Sun Mi; Kim, J.-S.

2016-01-01

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

1993-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

1994-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Ion beam sputter implantation method

International Nuclear Information System (INIS)

King, W.J.

1978-01-01

By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

International Nuclear Information System (INIS)

Lim, Jongmin; Lee, Chongmu

2006-01-01

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

Energy Technology Data Exchange (ETDEWEB)

Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

1990-01-01

The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a new Monte Carlo model and a new continuum theory of surface pattern formation due to 'surfactant sputtering', i.e. erosion by ion beam sputtering including a submonolayer coverage of additional, co-sputtered surfactant atoms. This setup, which has been realized in recent experiments in a controlled way leads to a number of interesting possibilities to modify pattern forming processing conditions. We will present three simple scenarios, which illustrate some potential applications of the method. In all three cases, simple Bradley-Harper type ripples appear in the absence of surfactant, whereas new, interesting structures emerge during surfactant sputtering.

Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

Energy Technology Data Exchange (ETDEWEB)

Feder, R., E-mail: rene.feder@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany); Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany)

2013-12-15

Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done. A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

Magnetic and structural properties of ion beam sputtered Fe–Zr–Nb–B–Cu thin films

International Nuclear Information System (INIS)

Modak, S.S.; Kane, S.N.; Gupta, A.; Mazaleyrat, F.; LoBue, M.; Coisson, M.; Celegato, F.; Tiberto, P.; Vinai, F.

2012-01-01

Magnetic and structural properties of Fe–Zr–Nb–B–Cu thin films, prepared by ion beam sputtering on silicon substrates by using a target made up of amorphous ribbons of nominal composition Fe 84 Zr 3.5 Nb 3.5 B 8 Cu 1 , are reported. As-deposited thin film samples exhibit an in-plane uniaxial anisotropy, which can be ascribed to the preparation technique and the coupling of quenched-in internal stresses. Structural measurements indicate no significant variation of the grain size with thickness and with the annealing temperature. Increase in surface irregularities with annealing temperature and oxidation results in aggregates that would act as pinning centers, affecting the magnetic properties leading to magnetic hardening of the specimens. The role of the magnetic anisotropy is thoroughly discussed with the help of magnetic and ferromagnetic resonance measurements. - Highlights: ►Ion beam sputtered Fe–Zr–Nb–B–Cu thin films of different thickness are prepared. ►Films exhibit in-plane uniaxial anisotropy, which reduces with thermal treatments. ►Increased surface roughness leads to wall pinning, increasing the coercive field.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

Energy Technology Data Exchange (ETDEWEB)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von [RD Plasmas with Complex Interactions, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum (Germany)

2013-10-15

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

Low temperature mechanical dissipation of an ion-beam sputtered silica film

International Nuclear Information System (INIS)

Martin, I W; Craig, K; Bassiri, R; Hough, J; Robie, R; Rowan, S; Nawrodt, R; Schwarz, C; Harry, G; Penn, S; Reid, S

2014-01-01

Thermal noise arising from mechanical dissipation in oxide mirror coatings is an important limit to the sensitivity of future gravitational wave detectors, optical atomic clocks and other precision measurement systems. Here, we present measurements of the temperature dependence of the mechanical dissipation of an ion-beam sputtered silica film between 10 and 300 K. A dissipation peak was observed at 20 K and the low temperature dissipation was found to have significantly different characteristics than observed for bulk silica and silica films deposited by alternative techniques. These results are important for better understanding the underlying mechanisms of mechanical dissipation, and thus thermal noise, in the most commonly-used reflective coatings for precision measurements. (paper)

Sputtering as a means of depth profiling

International Nuclear Information System (INIS)

Whitton, J.L.

1978-01-01

Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2014-05-15

Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

Superconducting oxide thin films by ion beam sputtering

International Nuclear Information System (INIS)

Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

1987-01-01

Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

Low-damage high-throughput grazing-angle sputter deposition on graphene

Energy Technology Data Exchange (ETDEWEB)

Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

2013-07-15

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Low-damage high-throughput grazing-angle sputter deposition on graphene

International Nuclear Information System (INIS)

Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

2013-01-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

Low-damage high-throughput grazing-angle sputter deposition on graphene

Science.gov (United States)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

International Nuclear Information System (INIS)

Rao, Ambati Pulla; Sunandana, C.S.

2008-01-01

Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

Multilayered nanostructured coverings generated by a method of ion beam sputtering in vacuum

International Nuclear Information System (INIS)

Il'yushenko, A.F.; Andreev, M.A.; Markova, L.V.; Lisovskaya, Yu. O.

2013-01-01

Technological process of the formation of multilayered coverings by ion -beam sputtering is developed. At research of samples by method of AFM it is established, that the heating of a substrate leads to formation of rather large grains up to 100 nanometers in size, consisting of dispersed subgrains in the size 10-25 nanometers. The obtained results allow to say that in the course of formation of coverings interphase borders of section in one layer and section border between coat layers are formed. The use of a method of Electron Backscatter Diffraction Analysis (EBSD) has helped to confirm that the at ion-beam sputtering, ultrafine diamonds remain their diamond-like structure when migrating to the surface of the coating. It is found that with increasing number of monolayers coating microhardness increases. However, this relationship is described by a nonlinear and exponential model. (authors)

Novel magnetic controlled plasma sputtering method

International Nuclear Information System (INIS)

Axelevich, A.; Rabinovich, E.; Golan, G.

1996-01-01

A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

Pattern evolution during ion beam sputtering; reductionistic view

Energy Technology Data Exchange (ETDEWEB)

Kim, J.-H.; Kim, J.-S., E-mail: jskim@sm.ac.kr

2016-09-15

The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley–Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

Gold removal rate by ion sputtering as a function of ion-beam voltage and raster size using Auger electron spectroscopy. Final report

International Nuclear Information System (INIS)

Boehning, C.W.

1983-01-01

Gold removal rate was measured as a function of ion beam voltage and raster size using Auger electron spectroscopy (AES). Three different gold thicknesses were developed as standards. Two sputter rate calibration curves were generated by which gold sputter rate could be determined for variations in ion beam voltage or raster size

Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

International Nuclear Information System (INIS)

Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

2005-01-01

We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at λ=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

Science.gov (United States)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

Science.gov (United States)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

Energy Technology Data Exchange (ETDEWEB)

Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

2016-10-15

Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

International Nuclear Information System (INIS)

Nagata, T.; Haemori, M.; Chikyow, T.

2009-01-01

The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

Energy Technology Data Exchange (ETDEWEB)

Nagata, T.; Haemori, M.; Chikyow, T. [Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2009-05-15

The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

Acceleration of 14C beams in electrostatic accelerators

International Nuclear Information System (INIS)

Rowton, L.J.; Tesmer, J.R.

1981-01-01

Operational problems in the production and acceleration of 14 C beams for nuclear structure research in Los Alamos National Laboratory's Van de Graaff accelerators are discussed. Methods for the control of contamination in ion sources, accelerators and personnel are described. Sputter source target fabrication techniques and the relative beam production efficiencies of various types of bound particulate carbon sputter source targets are presented

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

Science.gov (United States)

Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

2015-03-13

The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

International Nuclear Information System (INIS)

Fang, T.-H.; Chang, W.-J.; Lin, C.-M.; Lien, W.-C.

2008-01-01

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 x 10 -17 J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power

Effects of ion sputtering on semiconductor surfaces

International Nuclear Information System (INIS)

McGuire, G.E.

1978-01-01

Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

Energy Technology Data Exchange (ETDEWEB)

Ziani, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France); Delmotte, F., E-mail: Franck.Delmotte@InstitutOptique.fr [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Le Paven-Thivet, C. [Institut d' Electronique et de Télécommunications de Rennes (IETR) UMR-CNRS 6164, Université de Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex France (France); Meltchakov, E.; Jérome, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Roulliay, M. [Institut des Sciences Moléculaires d’Orsay UMR 8214, Univ Paris Sud, 91405 Orsay France (France); Bridou, F. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Gasc, K. [Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France)

2014-02-03

In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B{sub 4}C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source.

Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

International Nuclear Information System (INIS)

Ziani, A.; Delmotte, F.; Le Paven-Thivet, C.; Meltchakov, E.; Jérome, A.; Roulliay, M.; Bridou, F.; Gasc, K.

2014-01-01

In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B 4 C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source

Ion beam sputter coatings for laser technology

Science.gov (United States)

Ristau, Detlev; Gross, Tobias

2005-09-01

The initial motivation for the development of Ion Beam Sputtering (IBS) processes was the need for optical coatings with extremely low optical scatter losses for laser gyros. Especially, backscattering of the gyro-mirrors couples the directional modes in the ring resonator leading to the lock in effect which limits the sensitivity of the gyro. Accordingly, the first patent on IBS was approved for an aircraft company (Litton) in 1978. In the course of the rapid development of the IBS-concept during the last two decades, an extremely high optical quality could be achieved for laser coatings in the VIS- and NIR-spectral region. For example, high reflecting coatings with total optical losses below 1 ppm were demonstrated for specific precision measurement applications with the Nd:YAG-laser operating at 1.064 μm. Even though the high quality level of IBS-coatings had been confirmed in many applications, the process has not found its way into the production environment of most optical companies. Major restrictions are the relatively low rate of the deposition process and the poor lateral homogeneity of the coatings, which are related to the output characteristics of the currently available ion sources. In the present contribution, the basic principles of IBS will be discussed in the context of the demands of modern laser technology. Besides selected examples for special applications of IBS, aspects will be presented for approaches towards rapid manufacturing of coatings and the production of rugate filters on the basis of IBS-techniques.

Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

International Nuclear Information System (INIS)

Qian, H X; Zeng, X R; Zhou, W

2010-01-01

Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

Low current beam techniques

Energy Technology Data Exchange (ETDEWEB)

Saint, A.; Laird, J.S.; Bardos, R.A.; Legge, G.J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Nishijima, T.; Sekiguchi, H. [Electrotechnical Laboratory, Tsukuba (Japan).

1993-12-31

Since the development of Scanning Transmission Microscopy (STIM) imaging in 1983 many low current beam techniques have been developed for the scanning (ion) microprobe. These include STIM tomography, Ion Beam Induced Current, Ion Beam Micromachining and Microlithography and Ionoluminense. Most of these techniques utilise beam currents of 10{sup -15} A down to single ions controlled by beam switching techniques This paper will discuss some of the low beam current techniques mentioned above, and indicate, some of their recent applications at MARC. A new STIM technique will be introduced that can be used to obtain Z-contrast with STIM resolution. 4 refs., 3 figs.

Low current beam techniques

Energy Technology Data Exchange (ETDEWEB)

Saint, A; Laird, J S; Bardos, R A; Legge, G J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Nishijima, T; Sekiguchi, H [Electrotechnical Laboratory, Tsukuba (Japan).

1994-12-31

Since the development of Scanning Transmission Microscopy (STIM) imaging in 1983 many low current beam techniques have been developed for the scanning (ion) microprobe. These include STIM tomography, Ion Beam Induced Current, Ion Beam Micromachining and Microlithography and Ionoluminense. Most of these techniques utilise beam currents of 10{sup -15} A down to single ions controlled by beam switching techniques This paper will discuss some of the low beam current techniques mentioned above, and indicate, some of their recent applications at MARC. A new STIM technique will be introduced that can be used to obtain Z-contrast with STIM resolution. 4 refs., 3 figs.

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

International Nuclear Information System (INIS)

Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

2016-01-01

Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

Energy Technology Data Exchange (ETDEWEB)

Yang, Jie; Zhao, Bo [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Wang, Chong, E-mail: cwang@mail.sitp.ac.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Qiu, Feng; Wang, Rongfei [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Yang, Yu, E-mail: yuyang@ynu.edu.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China)

2016-11-15

Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

Preparation and comparison of a-C:H coatings using reactive sputter techniques

Energy Technology Data Exchange (ETDEWEB)

Keunecke, M., E-mail: martin.keunecke@ist.fraunhofer.d [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Weigel, K.; Bewilogua, K. [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Cremer, R.; Fuss, H.-G. [CemeCon AG, Wuerselen (Germany)

2009-12-31

Amorphous hydrogenated carbon (a-C:H) coatings are widely used in several industrial applications. These coatings commonly will be prepared by plasma activated chemical vapor deposition (PACVD). The main method used to prepare a-C:H coating in industrial scale is based on a glow discharge in a hydrocarbon gas like acetylene or methane using a substrate electrode powered with medium frequency (m.f. - some 10 to 300 kHz). Some aims of further development are adhesion improvement, increase of hardness and high coating quality on complex geometries. A relatively new and promising technique to fulfil these requirements is the deposition of a-C:H coatings by a reactive d.c. magnetron sputter deposition from a graphite target with acetylene as reactive gas. An advancement of this technique is the deposition in a pulsed magnetron sputter process. Using these three mentioned techniques a-C:H coatings were prepared in the same deposition machine. For adhesion improvement different interlayer systems were applied. The effect of different substrate bias voltages (d.c. and d.c. pulse) was investigated. By applying the magnetron sputter technique in the d.c. pulse mode, plastic hardness values up to 40 GPa could be reached. Besides hardness other mechanical properties like resistance against abrasive wear were measured and compared. Cross sectional SEM images showed the growth structure of the coatings.

Argonne inverted sputter source

International Nuclear Information System (INIS)

Yntema, J.L.; Billquist, P.J.

1983-01-01

The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

Simulation of carbon sputtering due to molecular hydrogen impact

International Nuclear Information System (INIS)

Laszlo, J.

1993-01-01

Simulated results are compared to experimental data on the sputtering yield of carbon due to atomic and to molecular hydrogen impact. The experimental sputtering yields of carbon (graphite) due to low energy hydrogen bombardment have been found to be higher than the simulated ones. Efforts are made to obtain high enough simulated yields by considering the formation of dimer, H 2 and D 2 molecules in the primary beam. The molecular beam model applies full neutralization and full dissociation at the surface. The simulation of sputtering yields of target materials up to Z 2 ≤ 30 is also included for the low primary energy regime for deuterium projectiles. It is found that, although the sputtering yields really tend to increase, the effect of molecule formation in the beam in itself cannot be made responsible for the deviation between measured and simulated sputtering yields. (orig.)

Simulation experiments and solar wind sputtering

International Nuclear Information System (INIS)

Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

1978-01-01

In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

Lead-silicate glass surface sputtered by an argon cluster ion beam investigated by XPS

Czech Academy of Sciences Publication Activity Database

Zemek, Josef; Jiříček, Petr; Houdková, Jana; Jurek, Karel; Gedeon, O.

2017-01-01

Roč. 469, Aug (2017), s. 1-6 ISSN 0022-3093 R&D Projects: GA MŠk LM2015088; GA ČR(CZ) GA15-12580S Institutional support: RVO:68378271 Keywords : lead-silicate glass * XPS * BO * NBO * Argon duster ion beam sputtering * X-ray irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.124, year: 2016

Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

International Nuclear Information System (INIS)

Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

2008-01-01

A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

Science.gov (United States)

Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

2013-09-01

Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

International Nuclear Information System (INIS)

Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

1998-01-01

Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

Atom beam sputtered Ag-TiO{sub 2} plasmonic nanocomposite thin films for photocatalytic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Jaspal; Sahu, Kavita [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India); Pandey, A. [Solid State Physics Laboratory, Defence Research and Development Organization, Timarpur, Delhi 110054 (India); Kumar, Mohit [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Ghosh, Tapas; Satpati, B. [Saha Institute of Nuclear Physics, HBNI, 1/AF, Bidhannagar, Kolkata 700064 (India); Som, T.; Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Avasthi, D.K. [Amity Institute of Nanotechnology, Noida 201313, Uttar Pradesh (India); Mohapatra, Satyabrata, E-mail: smiuac@gmail.com [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India)

2017-07-31

The development of nanocomposite coatings with highly enhanced photocatalytic activity is important for photocatalytic purification of water and air. We report on the synthesis of Ag-TiO{sub 2} nanocomposite thin films with highly enhanced photocatalytic activity by atom beam co-sputtering technique. The effects of Ag concentration on the structural, morphological, optical, plasmonic and photocatalytic properties of the nanocomposite thin films were investigated. UV–visible DRS studies revealed the presence of surface plasmon resonance (SPR) peak characteristic of Ag nanoparticles together with the excitonic absorption peak originating from TiO{sub 2} nanoparticles in the nanocomposites. XRD studies showed that the nanocomposite thin films consist of Ag nanoparticles and rutile TiO{sub 2} nanoparticles. The synthesized Ag-TiO{sub 2} nanocomposite thin films with 5 at% Ag were found to exhibit highly enhanced photocatalytic activity for sun light driven photocatalytic degradation of methylene blue in water, indicating their potential application in water purification.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Czech Academy of Sciences Publication Activity Database

Horák, Pavel; Bejšovec, Václav; Vacík, Jiří; Lavrentiev, Vasyl; Vrňata, M.; Kormunda, M.; Daniš, S.

2016-01-01

Roč. 389, DEC (2016), s. 751-759 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : Copper oxide * ion beam sputtering * Van der Pauw * nuclear reaction analysis * gas sensing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

Science.gov (United States)

Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

2002-06-01

Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

Specific features of fullerene-bearing thin film growth using ion beam vacuum sputtering of fullerene mixtures with B, Fe, Se, Gd and Na

International Nuclear Information System (INIS)

Semenov, A.P.; Semenova, I.A.; Bulina, N.V.; Lopatin, V.A.; Karmanov, N.S.; Churilov, G.N.

2005-01-01

A new approach to the growth of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of the doping element introduction between fullerene molecules. The proposed method has been experimentally implemented by using an Ar ion beam to sputter C 60 /C 70 fullerene mixtures, synthesized in a plasmachemical reactor at a pressure of 10 5 Pa and containing a doping element, i.e. Fe, Na, B, Gd or Se. Micron-thick films containing C 60 and C 70 fullerenes and the corresponding dopant element, i.e. Fe, Na, B, Gd or Se, were grown from dopant-containing fullerene mixtures by ion beam sputtering in a vacuum of ∼10 -2 Pa [ru

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

Directory of Open Access Journals (Sweden)

C. G. Jin

2008-01-01

Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

Application of the Ta liner technique to produce Ca beams at INFN-Legnaro National Laboratories (INFN-LNL)

Energy Technology Data Exchange (ETDEWEB)

Galatà, A., E-mail: alessio.galata@lnl.infn.it; Sattin, M.; Manzolaro, M.; Martini, D.; Facco, A. [INFN-Legnaro National Laboratories, Legnaro (Pd) (Italy); Tinschert, K.; Spaedtke, P.; Lang, R. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany); Kulevoy, T. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation)

2014-02-15

The ECR ion sources are able to produce a wide variety of highly charged metallic ion beams thanks to the development of different techniques (ovens, sputtering, direct insertion, metal ions from volatile compounds (MIVOC)). In the case of the ovens, the sticking of the hot vapors on the surface of the plasma chamber leads to high material consumption rates. For elements like Ca, a tantalum liner inserted inside the chamber can be used to limit this phenomenon. The modeling of temperature distribution inside the chamber with and without the liner was carried out with COMSOL-multiphysics code. Results of simulation and the comparison with experiments performed at INFN-Legnaro National Laboratories with Ca beams are discussed.

Production of intensive negative lithium beam with caesium sputter-type ion source

Science.gov (United States)

Lobanov, Nikolai R.

2018-01-01

Compounds of lithium oxide, hydroxide and carbonate, mixed with silver, were prepared for use as a cathode in caesium-sputter ion source. The intention was to determine the procedure which would produce the highest intensity negative lithium beams over extended period and with maximum stability. The chemical composition and properties of the samples were analysed using mass-spectrometry, optical microscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Analyses (EDX) and Raman spectroscopy. These analyses showed that the chemical transformations with components resulted from pressing, storage and bake out were qualitatively in agreement with expectations. Intensive negative lithium ion beams >1 μA were delivered using cathodes fabricated from materials with multicomponent chemical composition when the following conditions were met: (i) use of components with moderate enthalpy of formation; (ii) low moisture content at final stage of cathode production and (iii) small concentration of water molecules in hydrate phase in the cathode mixture.

Beam Techniques - Beam Control and Manipulation

International Nuclear Information System (INIS)

Minty, Michiko G

2003-01-01

We describe commonly used strategies for the control of charged particle beams and the manipulation of their properties. Emphasis is placed on relativistic beams in linear accelerators and storage rings. After a brief review of linear optics, we discuss basic and advanced beam control techniques, such as transverse and longitudinal lattice diagnostics, matching, orbit correction and steering, beam-based alignment, and linac emittance preservation. A variety of methods for the manipulation of particle beam properties are also presented, for instance, bunch length and energy compression, bunch rotation, changes to the damping partition number, and beam collimation. The different procedures are illustrated by examples from various accelerators. Special topics include injection and extraction methods, beam cooling, spin transport and polarization

Beam Techniques - Beam Control and Manipulation

Energy Technology Data Exchange (ETDEWEB)

Minty, Michiko G

2003-04-24

We describe commonly used strategies for the control of charged particle beams and the manipulation of their properties. Emphasis is placed on relativistic beams in linear accelerators and storage rings. After a brief review of linear optics, we discuss basic and advanced beam control techniques, such as transverse and longitudinal lattice diagnostics, matching, orbit correction and steering, beam-based alignment, and linac emittance preservation. A variety of methods for the manipulation of particle beam properties are also presented, for instance, bunch length and energy compression, bunch rotation, changes to the damping partition number, and beam collimation. The different procedures are illustrated by examples from various accelerators. Special topics include injection and extraction methods, beam cooling, spin transport and polarization.

Reactive sputter deposition

CERN Document Server

Mahieu, Stijn

2008-01-01

In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

Prototype inverted sputter source for negative heavy ions

International Nuclear Information System (INIS)

Minehara, Eisuke; Kobayashi, Chiaki; Kikuchi, Shiroh

1977-10-01

A sputter source from which negative heavy ion beam is extracted through a tungsten wire and disc ionizer was built and tested. An alkali metal surface ionization gun with the ionizer is described, and also performance of the surface ionization gun and of the sputter source for negative heavy ions using the gun is reported. The gun was tested for three alkali metals, i.e. sodium, potassium and cesium. Total potassium beam current of 1-2mA was obtained at entrance aperture of the magnet. Sputtering materials and gases for producing negative heavy ions are carbon, copper, aluminium, molybdenum, oxygen and air. With carbon and leakage air, the beam intensities analyzed are: 2-5μA (at Faraday cup) and 4.6-11μA (at exit slit) for C - , 3-5μA (at Faraday cup) and 6.8-11μA (at exit slit) for 2C - , and 11-15μA (at Faraday cup) and 25-34μA (at exit slit) for O - . Total beam current at the entrance aperture was 200-400μA. (auth.)

Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

International Nuclear Information System (INIS)

Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

1980-01-01

The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

Structural and corrosion characterization of hydroxyapatite/zirconium nitride-coated AZ91 magnesium alloy by ion beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Kiahosseini, Seyed Rahim, E-mail: rkiahoseyni@yahoo.com [Young Researchers and Elite Club, Damghan Branch, Islamic Azad University, Damghan (Iran, Islamic Republic of); Afshar, Abdollah [Department of Material Science and Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Radiation Applications Research School, Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of); Yousefpour, Mardali [Faculty of Materials and Metallurgical Engineering, Semnan University, Semnan, 35131-19111 (Iran, Islamic Republic of)

2017-04-15

Highlights: • The thickness of HA coatings increase by ion beam sputtering time. • The residual strain in HA structure decrease by deposition time increment. • Crystallite size of HA coatings increase by deposition time increment. • The best corrosion resistance occurs at intermediate deposition time. - Abstract: The adhesion of hydroxyapatite (HA) as a coating for the AZ91 magnesium alloy substrate can be improved by using the sputtering method and an intermediate layer, such as ZrN. In this study, HA coatings were applied on ZrN intermediate layers at a temperature of 300 °C for 180, 240, 300, 360, and 420 min by ion beam sputtering. A profilometer device was used to study the HA coating thickness, which changed from 2 μm for the 180-min deposition to 4.7 μm for 420-min deposition. The grazing incidence X-ray diffraction analysis method and the Williamson–Hall analysis were used for structural investigation. As the deposition time increased, the crystalline size increased from 50 nm to 690 nm. However, given sufficient time for stress relief on the coating structure, the lattice strain values were close to zero. Energy-dispersive X-ray spectroscopy results showed that the Ca/P ratio ranged from 1.73 to 1.81. The external indentation method was used to evaluate the coating adhesion to the substrate. The slope of curve for applied force changes versus the radius of cracks in the coating (dP/dr) varied in the range of 0.2–0.07 by the deposition time, indicating that the adhesion increased with the increase in coating thickness. The potentiodynamic polarization technique was used to study the corrosion behavior. With increasing deposition time, the corrosion potential of samples did not show a significant change, and the corrosion potential of all samples (coated and uncoated substrates) was more positive than approximately 55 mV. When the deposition time increased to 360 min, the corrosion current density decreased from 5.5 μA/cm{sup 2} to 0.33 �

Sputtering yields of carbon based materials under high particle flux with low energy

Science.gov (United States)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-04-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

Sputtering yields of carbon based materials under high particle flux with low energy

International Nuclear Information System (INIS)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-01-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 similar 7x10 20 /m 2 s at 50 similar 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 similar 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam. ((orig.))

Ion beam texturing

Science.gov (United States)

Hudson, W. R.

1977-01-01

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Ga lithography in sputtered niobium for superconductive micro and nanowires

International Nuclear Information System (INIS)

Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

2014-01-01

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 μm by 10 μm and 100 μm by 100 μm, demonstrate that doses above than 7.5 × 10 15  cm −2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75 nm wide by 10 μm long connected to 50 μm wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T c ) = 7.7 K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

Advanced electron beam techniques

International Nuclear Information System (INIS)

Hirotsu, Yoshihiko; Yoshida, Yoichi

2007-01-01

After 100 years from the time of discovery of electron, we now have many applications of electron beam in science and technology. In this report, we review two important applications of electron beam: electron microscopy and pulsed-electron beam. Advanced electron microscopy techniques to investigate atomic and electronic structures, and pulsed-electron beam for investigating time-resolved structural change are described. (author)

Recent advancements in sputter-type heavy negative ion sources

International Nuclear Information System (INIS)

Alton, G.D.

1989-01-01

Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few μA to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

Science.gov (United States)

Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

2015-08-14

Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

International Nuclear Information System (INIS)

Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

2004-01-01

Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

Fundamental aspects of cathodic sputtering

International Nuclear Information System (INIS)

Harman, R.

1979-01-01

The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

Simulating discrete models of pattern formation by ion beam sputtering

International Nuclear Information System (INIS)

Hartmann, Alexander K; Kree, Reiner; Yasseri, Taha

2009-01-01

A class of simple, (2+1)-dimensional, discrete models is reviewed, which allow us to study the evolution of surface patterns on solid substrates during ion beam sputtering (IBS). The models are based on the same assumptions about the erosion process as the existing continuum theories. Several distinct physical mechanisms of surface diffusion are added, which allow us to study the interplay of erosion-driven and diffusion-driven pattern formation. We present results from our own work on evolution scenarios of ripple patterns, especially for longer timescales, where nonlinear effects become important. Furthermore we review kinetic phase diagrams, both with and without sample rotation, which depict the systematic dependence of surface patterns on the shape of energy depositing collision cascades after ion impact. Finally, we discuss some results from more recent work on surface diffusion with Ehrlich-Schwoebel barriers as the driving force for pattern formation during IBS and on Monte Carlo simulations of IBS with codeposition of surfactant atoms.

Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

Energy Technology Data Exchange (ETDEWEB)

Huang, H.S., E-mail: 160184@mail.csc.com.tw [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chiu, C.H.; Hong, I.T.; Tung, H.C. [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chien, F.S.-S. [Department of Physics, Tunghai University, 1727, Sec. 4, Xitun Dist., Taiwan Boulevard, Taichung 407, Taiwan, ROC (China)

2013-09-15

Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

An experiment on the dynamics of ion implantation and sputtering of surfaces

Energy Technology Data Exchange (ETDEWEB)

Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B. [Plasma Science and Fusion Center, MIT, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States)

2014-02-15

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

An experiment on the dynamics of ion implantation and sputtering of surfaces

International Nuclear Information System (INIS)

Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B.

2014-01-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface

Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

Directory of Open Access Journals (Sweden)

Azrul Azlan Hamzah

2008-11-01

Full Text Available This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputtered encapsulation technique. Encapsulation with a very uniform surface profile was achieved using spin-on glass (SOG as a sacrificial layer, SU-8 as base layer, RF sputtered silicon as main structural layer, eutectic gold-silicon as seal layer, and liquid crystal polymer (LCP as outer encapsulant layer. SEM inspection and capacitance test indicated that the movable elements were released after encapsulation. Nanoindentation test confirmed that the encapsulated device is sufficiently robust to withstand a transfer molding process. Thus, an encapsulation technique that is robust, CMOS compatible, and economical has been successfully developed for packaging isolatable MEMS devices at the wafer level.

Characterization of TiO2 Thin Films on Glass Substrate Growth Using DC Sputtering Technique

International Nuclear Information System (INIS)

Agus Santoso; Tjipto Sujitno; Sayono

2002-01-01

It has been fabricated and characterization a TiO 2 thin films deposited on glass substrate using DC sputtering technique. Fabrication of TiO 2 thin films were carried out at electrode voltage 4 kV, sputtering current 5 mA, vacuum pressure 5 x 10 -4 torr, deposition time 150 minutes, and temperature of the substrate were varied from 150 -350 o C, while as a gas sputter was argon. The results was tested their micro structure using SEM, and crystal structure using XRD and found that the crystal structure of TiO 2 powder before deposited on glass substrate was rutile and anatase with orientation (110) and (200) for anatase and (100) and (111) rutile structure. While the crystal structure which deposited at temperature 150 o C and deposition time 2.5 hours was anatase with orientation (001) and (200). (author)

Low-Damage Sputter Deposition on Graphene

Science.gov (United States)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Sputtering calculations with the discrete ordinated method

International Nuclear Information System (INIS)

Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

1977-01-01

The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films

Directory of Open Access Journals (Sweden)

Chun-Min Wang

2015-08-01

Full Text Available Tin oxide (SnO2—x thin films were prepared under various flow ratios of O2/(O2 + Ar on unheated glass substrate using the ion beam sputtering (IBS deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar, chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD and transmission electron microscopy (TEM analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM. Auger electron spectroscopy (AES analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Quartz crystal microbalance-based system for high-sensitivity differential sputter yield measurements

International Nuclear Information System (INIS)

Rubin, B.; Topper, J. L.; Farnell, C. C.; Yalin, A. P.

2009-01-01

We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 deg. - 70 deg. from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

Science.gov (United States)

Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

2018-04-01

In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

Production of rare-earth atomic negative ion beams in a cesium-sputter-type negative ion source

International Nuclear Information System (INIS)

Davis, V.T.; Covington, A.M.; Duvvuri, S.S.; Kraus, R.G.; Emmons, E.D.; Kvale, T.J.; Thompson, J.S.

2007-01-01

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps

Nickel oxide films by thermal annealing of ion-beam-sputtered Ni: Structure and electro-optical properties

Czech Academy of Sciences Publication Activity Database

Horák, Pavel; Remeš, Zdeněk; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Kormunda, M.

2017-01-01

Roč. 640, č. 10 (2017), s. 52-59 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR(CZ) GA14-05053S; GA MŠk LM2015056 Institutional support: RVO:61389005 ; RVO:68378271 Keywords : NiO * ion beam sputtering * thermal annealing * nuclear analytical methods * optical properties Subject RIV: JK - Corrosion ; Surface Treatment of Materials; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Coating and films; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 1.879, year: 2016

Fabrication of hydroxyapatite thin films on polyetheretherketone substrates using a sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Ozeki, K., E-mail: kazuhide.ozeki.365@vc.ibaraki.ac.jp [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Masuzawa, T. [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Aoki, H. [International Apatite Institute Co., Ltd., 2-12-9, Misaki-cho, Chiyoda-ku, Tokyo 101-0061 (Japan)

2017-03-01

Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. A thin titanium (Ti) intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film to the PEEK substrate. The coated films were recrystallized using a hydrothermal treatment to reduce the dissolution of the HA film. The films were then characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and a UV-Vis spectrophotometer. A pull-out test was performed to measure the film-to-substrate adhesion strength, and an immersion test was performed in ultra-pure water. In the XRD patterns of the sputtered film with the Ti intermediate layer on the PEEK substrate, small HA peaks and large Ti peaks were observed. After the hydrothermal treatment, the intensity of the HA peaks increased. The transmittance of the HA films with 5 and 10 nm Ti intermediate layers was > 79% and 68%, respectively, in the visible light wavelength region (400–700 nm) after the hydrothermal treatment. The adhesion strength of the hydrothermally treated HA films increased with decreasing thickness of the Ti intermediate layer, and the strength reached 2.7 MPa with the 5-nm-thick Ti intermediate layer. In the immersion test, the HA film with a 5-nm-thick Ti intermediate layer without hydrothermal treatment exhibited a released Ti concentration of 42.0 ± 2.4 ppb. After hydrothermal treatment, the released Ti concentration decreased to 17.3 ± 1.1 ppb. - Highlights: • Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. • A thin Ti intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film. • The adhesion strength of the HA films with the Ti intermediate layer increased with decreasing thickness of the Ti layer.

Fabrication of hydroxyapatite thin films on polyetheretherketone substrates using a sputtering technique

International Nuclear Information System (INIS)

Ozeki, K.; Masuzawa, T.; Aoki, H.

2017-01-01

Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. A thin titanium (Ti) intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film to the PEEK substrate. The coated films were recrystallized using a hydrothermal treatment to reduce the dissolution of the HA film. The films were then characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and a UV-Vis spectrophotometer. A pull-out test was performed to measure the film-to-substrate adhesion strength, and an immersion test was performed in ultra-pure water. In the XRD patterns of the sputtered film with the Ti intermediate layer on the PEEK substrate, small HA peaks and large Ti peaks were observed. After the hydrothermal treatment, the intensity of the HA peaks increased. The transmittance of the HA films with 5 and 10 nm Ti intermediate layers was > 79% and 68%, respectively, in the visible light wavelength region (400–700 nm) after the hydrothermal treatment. The adhesion strength of the hydrothermally treated HA films increased with decreasing thickness of the Ti intermediate layer, and the strength reached 2.7 MPa with the 5-nm-thick Ti intermediate layer. In the immersion test, the HA film with a 5-nm-thick Ti intermediate layer without hydrothermal treatment exhibited a released Ti concentration of 42.0 ± 2.4 ppb. After hydrothermal treatment, the released Ti concentration decreased to 17.3 ± 1.1 ppb. - Highlights: • Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. • A thin Ti intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film. • The adhesion strength of the HA films with the Ti intermediate layer increased with decreasing thickness of the Ti layer.

XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide

Energy Technology Data Exchange (ETDEWEB)

Simpson, Robin, E-mail: r.simpson@surrey.ac.uk [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey (United Kingdom); Thermo Scientific, East Grinstead (United Kingdom); White, Richard G. [Thermo Scientific, East Grinstead (United Kingdom); Watts, John F.; Baker, Mark A. [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey (United Kingdom)

2017-05-31

Highlights: • Ion beam induced oxide reduction from monatomic and gas cluster ion beam exposure are compared. • Lower relative level of preferential sputtering is shown in gas cluster ion beam depth profiling. • A lack of “steady state” is observed in gas cluster ion beam depth profiles of tantalum pentoxide. • Possible mechanisms behind the observed results, including temperature effects are proposed. - Abstract: In recent years, gas cluster ion beams (GCIB) have become the cutting edge of ion beam technology to sputter etch organic materials in surface analysis. However, little is currently known on the ability of argon cluster ions (Ar{sub n}{sup +}) to etch metal oxides and other technologically important inorganic compounds and no depth profiles have previously been reported. In this work, XPS depth profiles through a certified (European standard BCR-261T) 30 nm thick Ta{sub 2}O{sub 5} layer grown on Ta foil using monatomic Ar{sup +} and Ar{sub 1000}{sup +} cluster ions have been performed at different incident energies. The preferential sputtering of oxygen induced using 6 keV Ar{sub 1000}{sup +} ions is lower relative to 3 keV and 500 eV Ar{sup +} ions. Ar{sup +} ions exhibit a steady state O/Ta ratio through the bulk oxide but Ar{sub 1000}{sup +} ions show a gradual decrease in the O/Ta ratio as a function of depth. The depth resolution and etch rate is substantially better for the monatomic beam compared to the cluster beam. Higher O concentrations are observed when the underlying Ta bulk metal is sputtered for the Ar{sub 1000}{sup +} profiles compared to the Ar{sup +} profiles.

Uniform elemental analysis of materials by sputtering and photoionization mass spectrometry

International Nuclear Information System (INIS)

Chun, He; Basler, J.N.; Becker, C.H.

1997-01-01

Analysis of the elemental composition of surfaces commonly involves techniques in which atoms or ions are ablated from the material's surface and detected by mass spectrometry. Secondary-ion mass spectrometry is widely used for detection with high sensitivity (down to a few parts per billion) but technical problems prevent it from being truly quantitative. Some of these problems are circumvented by nonresonant laser post-ionization of sputtered atoms followed by time-of-flight mass spectrometry (surface analysis by laser ionization: SALI). But when there are large differences in ionization probabilities amongst different elements in the material, the detection sensitivity can be non-uniform and accurate quantification remains out of reach. Here we report that highly uniform, quantitative and sensitive analysis of materials can be achieved using a high-energy (5-keV) ion beam for sputtering coupled with a very-high-intensity laser to induce multiphoton ionization of the sputtered atoms. We show uniform elemental sensitivity for several samples containing elements with very different ionization potentials, suggesting that this approach can now be regarded as quantitative for essentially any material. (author)

Tool steel ion beam assisted nitrocarburization

International Nuclear Information System (INIS)

Zagonel, L.F.; Alvarez, F.

2007-01-01

The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

Topography induced by sputtering in a magnetic sector instrument: an AFM and SEM study

International Nuclear Information System (INIS)

Iacob, E.; Bersani, M.; Lui, A.; Giubertoni, D.; Barozzi, M.; Anderle, M.

2004-01-01

Due to the sensitivity, the good depth resolution and the great interest in ultra shallow profile, secondary ion mass spectrometry (SIMS) is one of the prime techniques used in the semiconductor industry. Low impact energy beams are required to profile shallow distributions. Since Cs + beam sputtering can cause morphological artifacts as well as O 2 + beam does, a detailed study is required to understand development and limiting analytical conditions. In this work we analyzed the effect of low energy Cs + primary beam incident at 68 deg. and 78 deg. on different silicon samples. By using atomic force microscopy (AFM) and scanning electron microscopy (SEM) we underline their reliability and correlate the morphological effects to the SIMS analytical parameters and samples characteristics

Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debasree; Ghose, Debabrata, E-mail: debabrata1.ghose@gmail.com

2016-11-01

Highlights: • GaAs (001) surfaces are sputtered by 1 keV Ar{sup +} at sample temperature of 450 °C. • Highly ordered defect-free ripples develop at near-normal incidence angles (θ ≈ 0–25{sup 0}). • Concurrent sample rotation does not alter the ripple orientation with respect to the ion beam. • At grazing incidence angles anisotropic structure is formed. • Concurrent sample rotation shows that the structure orientation depends on the beam direction. - Abstract: Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar{sup +} bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

Ion-beam technologies

Energy Technology Data Exchange (ETDEWEB)

Fenske, G.R. [Argonne National Lab., IL (United States)

1993-01-01

This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

International Nuclear Information System (INIS)

Li Dejie

2002-01-01

In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

Crystal orientation and sample preparation effects on sputtering and lattice damage in 100 keV self-irradiated copper

International Nuclear Information System (INIS)

Sprague, J.A.; Malmberg, P.R.; Reynolds, G.W.; Lambert, J.M.; Treado, P.A.; Vincenz, A.M.

1987-01-01

Sputtering yields and angular distributions have been measured as functions of sample preparation techniques and incident ion-beam orientation with respect to the crystal axes for 100 keV Cu-ion beams on Cu crystals and polycrystalline samples. The angular distributions have structure requiring an nth order cosine with two Gaussians superimposed to fit the data; strong peaking is observed near the backscatter direction. The yield is dependent on the beam to crystal and beam to polycrystalline-rod axis orientation, on the grain size of the polycrystals and on sample-preparation techniques. Yield measurements vary by as much as a factor of 4. Lattice-damage differences, measured with alpha particle channeling, are much smaller and seem to be saturated by fluences of the order of 1x10 16 /cm 2 . (orig.)

Sputtering induced surface composition changes in copper-palladium alloys

International Nuclear Information System (INIS)

Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

1981-01-01

It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

International Nuclear Information System (INIS)

Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

2002-01-01

Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

Laser fluorescence spectroscopy of sputtered uranium atoms

International Nuclear Information System (INIS)

Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

1979-01-01

Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

Nanoscale pattern formation at surfaces under ion-beam sputtering: A perspective from continuum models

International Nuclear Information System (INIS)

Cuerno, Rodolfo; Castro, Mario; Munoz-Garcia, Javier; Gago, Raul; Vazquez, Luis

2011-01-01

Although reports on surface nanostructuring of solid targets by low to medium energy ion irradiation date back to the 1960s, only with the advent of high resolution tools for surface/interface characterization has the high potential of this procedure been recognized as a method for efficient production of surface patterns. Such morphologies are made up of periodic arrangements of nanometric sized features, like ripples and dots, with interest for technological applications due to their electronic, magnetic, and optical properties. Thus, roughly for the last ten years large efforts have been directed towards harnessing this nanofabrication technique. However, and particularly in view of recent experimental developments, we can say that the basic mechanisms controlling these pattern formation processes remain poorly understood. The lack of nanostructuring at low angles of incidence on some pure monoelemental targets, the role of impurities in the surface dynamics and other recent observations are challenging the classic view on the phenomenon as the mere interplay between the curvature dependence of the sputtering yield and surface diffusion. We review the main attempts at a theoretical (continuum) description of these systems, with emphasis on recent developments. Strong hints already exist that the nature of the morphological instability has to be rethought as originating in the material flow that is induced by the ion beam.

Formation of large clusters during sputtering of silver

International Nuclear Information System (INIS)

Staudt, C.; Heinrich, R.; Wucher, A.

2000-01-01

We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

Copper-coated laser-fusion targets using molecular-beam levitation

International Nuclear Information System (INIS)

Rocke, M.J.

1981-01-01

A series of diagnostic experiments at the Shiva laser fusion facility required targets of glass microspheres coated with 1.5 to 3.0 μm of copper. Previous batch coating efforts using vibration techniques gave poor results due to microsphere sticking and vacuum welding. Molecular Beam Levitation (MBL) represented a noncontact method to produce a sputtered copper coating on a single glassmicrosphere. The coating specifications that were achieved resulted in a copper layer up to 3 μm thick with the allowance of a maximum variation of 10 nm in surface finish and thickness. These techniques developed with the MBL may be applied to sputter coat many soft metals for fusion target applications

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Alkali metal adsorbate sputtering by molecular impact

International Nuclear Information System (INIS)

Moran, J.P.; Wachman, H.Y.; Trilling, L.

1974-01-01

An exploratory study of the sputtering by a krypton molecular beam of rubidium adsorbed at low coverage on a tungsten substrate has been described in a previous paper. An extension of this work is reported now

Control of surface ripple amplitude in ion beam sputtered polycrystalline cobalt films

Energy Technology Data Exchange (ETDEWEB)

Colino, Jose M., E-mail: josemiguel.colino@uclm.es [Institute of Nanoscience, Nanotechnology and Molecular Materials, University of Castilla-La Mancha, Campus de la Fabrica de Armas, Toledo 45071 (Spain); Arranz, Miguel A. [Facultad de Ciencias Quimicas, University of Castilla-La Mancha, Ciudad Real 13071 (Spain)

2011-02-15

We have grown both polycrystalline and partially textured cobalt films by magnetron sputter deposition in the range of thickness (50-200 nm). Kinetic roughening of the growing film leads to a controlled rms surface roughness values (1-6 nm) increasing with the as-grown film thickness. Ion erosion of a low energy 1 keV Ar+ beam at glancing incidence (80{sup o}) on the cobalt film changes the surface morphology to a ripple pattern of nanometric wavelength. The wavelength evolution at relatively low fluency is strongly dependent on the initial surface topography (a wavelength selection mechanism hereby confirmed in polycrystalline rough surfaces and based on the shadowing instability). At sufficiently large fluency, the ripple wavelength steadily increases on a coarsening regime and does not recall the virgin surface morphology. Remarkably, the use of a rough virgin surface makes the ripple amplitude in the final pattern can be controllably increased without affecting the ripple wavelength.

The effect of FR enhancement in reactive ion beam sputtered Bi, Gd, Al-substituted iron- garnets: Bi2O3 nanocomposite films

OpenAIRE

Berzhansky, V.; Shaposhnikov, A.; Karavainikov, A.; Prokopov, A.; Mikhailova, T.; Lukienko, I.; Kharchenko, Yu.; Miloslavskaya, O.; Kharchenko, N.

2012-01-01

The effect of considerable Faraday rotation (FR) and figure of merit (Q) enhancement in Bi, Gd, Al-substituted iron garnets: Bi2O3 nano-composite films produced by separate reactive ion beam sputtered Bi:YIG and Bi2O3 films was found. It reached threefold enhancement of the FR and twofold of the Q one on GGG substrates.

Novel uses of a wide beam saddle field ion source for producing targets used in nuclear physics experiments at the Argonne National Laboratory ATLAS facility

International Nuclear Information System (INIS)

Greene, J.P.; Thomas, G.E.

1996-01-01

The wide beam ion sputter source has several unique characteristics which make it very useful for producing, reducing the thickness or cleaning the surface of targets needed for nuclear physics experiments. A discussion of these techniques as well as the sputter source characteristics will be given. Sputter yields obtained utilizing the source are presented for a variety of materials common to nuclear target production

Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

CERN Document Server

Ellmer, K; Weiss, V; Rossner, H

2001-01-01

A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

Science.gov (United States)

Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

2012-06-01

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

International Nuclear Information System (INIS)

Chow, R; Ellis, A D; Loomis, G E; Rana, S I

2007-01-01

High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

Energy Technology Data Exchange (ETDEWEB)

Sagdeo, P R; Shinde, D D; Misal, J S [Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam -530012 (India); Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C, E-mail: nksahoo@barc.gov.i, E-mail: sahoonk@gmail.co [Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

2010-02-03

Titania-silica (TiO{sub 2}/SiO{sub 2}) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser ({lambda} = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

International Nuclear Information System (INIS)

Sagdeo, P R; Shinde, D D; Misal, J S; Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C

2010-01-01

Titania-silica (TiO 2 /SiO 2 ) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

Energy Technology Data Exchange (ETDEWEB)

Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

2014-05-15

Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

A current induced diffusion model of gas sputtering

International Nuclear Information System (INIS)

Hotston, E.S.

1980-01-01

A model is proposed to explain the experimental results on deuteron trapping in stainless steel targets at low temperatures carried out at Garching and Culham. The model proposes that the ions are trapped in two kinds of sites: Deep sites with high activation energy and shallow sites of low activation energy. Trapped deuterons reach the surface of the target by being expelled from shallow sites by the action of the ion beam and migrate to nearby sites in a random way, thus moving by a bombardment induced diffusion. Ions diffusing to the target surface and being released are said to be sputtered from the target. It has been necessary to assume numerical values for sizes of some of the processes which occur. With a suitable choice of values the model successfully predicts the numbers of deuterons trapped per unit area of the target, the obserbed density profile of the trapped ions and the threshold at which sputtering starts. The model also successfully describes the replacement of the trapped deuterons by protons, when the deuteron beam is replaced by a proton beam. The collision cross-section for beam ions and ions trapped in shallow sites is too large, 4 x 10 -13 cm 2 , for a binary collision and it is tentatively suggested that the ions in the shallow sites may be in small voids in the target which may be connected with blister formation. Comparison of the present model with one being developed to describe the trapping of deuterons in carbon suggests that it may be possible to describe all gas sputtering experiments in terms of diffusion processes. (orig.)

Collision cascades and sputtering induced by larger cluster ions

International Nuclear Information System (INIS)

Sigmund, P.

1988-01-01

Recent experimental work on larger cluster impact on solid surfaces suggests large deviations from the standard case of additive sputter yields both in the nuclear and electronic stopping regime. The paper concentrates on elastic collision cascades. In addition to very pronounced spike effects, two phenomena are pointed out that are specific to cluster bombardment. Multiple hits of cluster atoms on one and the same target atom may result in recoil atoms that move faster than the maximum recoil speed for monomer bombardment at the same projectile speed. This effect is important when the atomic mass of a beam atom is less than that of a target atom, M 1 2 . In the opposite case, M 1 >> M 2 , collisions between beam particles may accelerate some beam particles and slow down others. Some consequences are mentioned. Remarks on the nuclear stopping power of larger clusters and on electronic sputtering by cluster bombardment conclude the paper. 38 refs., 2 figs

Advanced capabilities and applications of a sputter-RBS system

International Nuclear Information System (INIS)

Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

1999-01-01

In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

Surface engineering with ion beams: from self-organized nanostructures to ultra-smooth surfaces

International Nuclear Information System (INIS)

Frost, F.; Ziberi, B.; Schindler, A.; Rauschenbach, B.

2008-01-01

Low-energy ion-beam sputtering, i.e. the removal of atoms from a surface due to the impact of energetic ions or atoms, is an inherent part of numerous surface processing techniques. Besides the actual removal of material, this surface erosion process often results in a pronounced alteration of the surface topography. Under certain conditions, sputtering results in the formation of well-ordered patterns. This self-organized pattern formation is related to a surface instability between curvature-dependent sputtering that roughens the surface and smoothing by different surface relaxation mechanisms. If the evolution of surface topography is dominated by relaxation mechanisms, surface smoothing can occur. In this presentation the current status of self-organized pattern formation and surface smoothing by low-energy ion-beam erosion of Si and Ge is summarized. In detail it will be shown that a multitude of patterns as well as ultra-smooth surfaces can develop, particularly on Si surfaces. Additionally, the most important experimental parameters that control these processes are discussed. Finally, examples are given for the application of low-energy ion beams as a novel approach for passive optical device engineering for many advanced optical applications. (orig.)

Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si{sub 3}N{sub 4} nanocomposite coatings deposited by sputtering on AISI 316L

Energy Technology Data Exchange (ETDEWEB)

García, J. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C.E. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rodríguez, E.; Jiménez, O. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Solis, C.; Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, México, D.F. 07738 (Mexico)

2014-07-15

In this work, nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4}, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N{sub 2} plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4} show crystalline (TiN) and amorphous (Si{sub 3}N{sub 4}) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

Optical and tribomechanical stability of optically variable interference security devices prepared by dual ion beam sputtering.

Science.gov (United States)

Çetinörgü-Goldenberg, Eda; Baloukas, Bill; Zabeida, Oleg; Klemberg-Sapieha, Jolanta; Martinu, Ludvik

2011-07-01

Optical security devices applied to banknotes and other documents are exposed to different types of harsh environments involving the cycling of temperature, humidity, chemical agents, and tribomechanical intrusion. In the present work, we study the stability of optically variable devices, namely metameric interference filters, prepared by dual ion beam sputtering onto polycarbonate and glass substrates. Specifically, we assess the color difference as well as the changes in the mechanical properties and integrity of all-dielectric and metal-dielectric systems due to exposure to bleach, detergent and acetone agents, and heat and humidity. The results underline a significant role of the substrate material, of the interfaces, and of the nature and microstructure of the deposited films in long term stability under everyday application conditions.

Comparative microstructure and electrical property studies of lead scandium tantalate thin films as prepared by LDCVD, sol-gel and sputtering techniques

International Nuclear Information System (INIS)

Huang, Z; Donohue, P P; Zhang, Q; Williams, D J; Anthony, C J; Whatmore, R W; Todd, M A

2003-01-01

Lead scandium tantalate (PST) thin films for uncooled infrared (IR) detector applications have been deposited by liquid delivery chemical vapour deposition (LDCVD), sputtering and sol-gel techniques. The sol-gel and sputtered films were deposited at low temperature into a non-ferroelectric phase with the required perovskite structure being formed using a high temperature rapid thermal anneal (RTA). In contrast to this, the LDCVD films were deposited at high temperature directly into the perovskite phase but were found to still require a high temperature RTA step to optimize their merit for IR detection. Detailed structural and electrical characterization of the PST films deposited by these different methods have revealed that there is no simple relationship between microstructure and electrical properties. The sol-gel and LDCVD techniques produce thin films with excellent microstructures, as determined by x-ray diffraction analysis and transmission electron microscopy, but inferior electrical properties and relatively low merit figures. By contrast, the sputtered and then rapid thermal annealed films have inferior microstructures, characterized by extensive voiding, but excellent electrical properties and high merit figures

Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

Science.gov (United States)

Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

2016-07-29

The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

International Nuclear Information System (INIS)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-01-01

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

Science.gov (United States)

Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

2017-02-01

The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Cumpson, Peter J.; Portoles, Jose F.; Barlow, Anders J.; Sano, Naoko [National EPSRC XPS User' s Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

2013-09-28

Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface analysis a quantitative model of sputter yields near threshold is needed. We develop a simple equation based on a very simple model. Though greatly simplified it is likely to have realistic limiting behaviour and can be made useful for estimating sputter yields by fitting its three parameters to experimental data. We measure argon cluster-ion sputter yield using a quartz crystal microbalance close to the sputter threshold, for silicon dioxide, poly(methyl methacrylate), and polystyrene and (along with data for gold from the existing literature) perform least-squares fits of our new sputter yield equation to this data. The equation performs well, with smaller residuals than for earlier empirical models, but more importantly it is very easy to use in the design and quantification of sputter depth-profiling experiments.

Metal oxide collectors for storing matter technique applied in secondary ion mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Miśnik, Maciej [Institute of Tele and Radio Technology, ul. Ratuszowa 11, 03-450 Warszawa (Poland); Gdańsk University of Technology (Poland); Konarski, Piotr [Institute of Tele and Radio Technology, ul. Ratuszowa 11, 03-450 Warszawa (Poland); Zawada, Aleksander [Institute of Tele and Radio Technology, ul. Ratuszowa 11, 03-450 Warszawa (Poland); Military University of Technology, Warszawa (Poland)

2016-03-15

We present results of the use of metal and metal oxide substrates that serve as collectors in ‘storing matter’, the quantitative technique of secondary ion mass spectrometry (SIMS). This technique allows separating the two base processes of secondary ion formation in SIMS. Namely, the process of ion sputtering is separated from the process of ionisation. The technique allows sputtering of the analysed sample and storing the sputtered material, with sub-monolayer coverage, onto a collector surface. Such deposits can be then analysed by SIMS, and as a result, the so called ‘matrix effects’ are significantly reduced. We perform deposition of the sputtered material onto Ti and Cu substrates and also onto metal oxide substrates as molybdenum, titanium, tin and indium oxides. The process of sputtering is carried within the same vacuum chamber where the SIMS analysis of the collected material is performed. For sputtering and SIMS analysis of the deposited material we use 5 keV Ar{sup +} beam of 500 nA. The presented results are obtained with the use of stationary collectors. Here we present a case study of chromium. The obtained results show that the molybdenum and titanium oxide substrates used as collectors increase useful yield by two orders, with respect to such pure elemental collectors as Cu and Ti. Here we define useful yield as a ratio of the number of detected secondary ions during SIMS analysis and the number of atoms sputtered during the deposition process.

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Techniques for preparing isotopic targets

International Nuclear Information System (INIS)

Xu Guoji; Guan Shouren; Luo Xinghua; Sun Shuhua

1987-12-01

The techniques of making isotopic targets for nuclear physics experiments are introduced. Vacuum evaporation, electroplating, centrifugal precipitation, rolling and focused heavy-ion beam sputtering used to prepare various isotopic targets at IAE are described. Reduction-distillation with active metals and electrolytic reduction for converting isotope oxides to metals are mentioned. The stripping processes of producing self-supporting isotopic targets are summarized. The store methods of metallic targets are given

Ion beam techniques in arts and archaeology

International Nuclear Information System (INIS)

Qin Guangyong; Pan Xianjia; Sun Zhongtian; Gao Zhengyao

1991-01-01

The ion beam techniques used in studies of arts and archaeology are compared with other analytical techniques. Some examples are specially selected to illustrate the achievements and trends of the techniques in this field

Post-excitation of sputtered neutral atoms and application to the surface microanalysis by ionoluminescence

International Nuclear Information System (INIS)

Bourdilot, M.; Paletto, S.; Goutte, R.; Guillaud, C.

1975-01-01

During the bombardment of a solid target by a positive ion beam, an emission of light proceeding of the deexcitation of the neutral atoms which are sputtered in an excited state, is observed. This phenomenon is used in ionoluminescence analysis. By exciting the neutral atoms sputtered with an auxiliary discharge it is seen that: it is possible to increase, under certain experimental conditions, the sensibility of the ionoluminescence method. This post-excitation is particularly efficient with targets having an high sputtering coefficient [fr

Energy sharing and sputtering in low-energy collision cascades

International Nuclear Information System (INIS)

Weller, R.A.; Weller, M.R.

1982-01-01

Using a non-linear transport equation to describe the energy-sharing process in an isotropic collision cascade, we have numerically calculated sputtered particle velocity spectra for several very low energy (=< 10 eV) primary recoil distributions. Our formulation of the sputtering process is essentially that used in the linear model and our equations yield the familiar linear model results in the appropriate limit. Discrepancies between our calculations and the linear model results in other cases may be understood by considering the effects of the linear model assumptions on the sputtering yield at very low energies. Our calculations are also compared with recent experimental results investigating ion-explosion sputtering. The results of this comparison support the conclusion that in insulators sputtering is initiated by very low energy recoil atoms when the energy of the incident beam is high enough that the stopping power is dominated by the electronic contribution. The calculations also suggest that energy spectra similar to those for evaporation may result from non-equilibrium processes but that the apparent temperatures of evaporation are not related in a simple way to any real temperature within the target. (author)

Experience with Kicker Beam Coupling Reduction Techniques

CERN Document Server

Gaxiola, Enrique; Caspers, Friedhelm; Ducimetière, Laurent; Kroyer, Tom

2005-01-01

SPS beam impedance is still one of the worries for operation with nominal LHC beam over longer periods, once the final configuration will be installed in 2006. Several CERN SPS kickers suffer from significant beam induced ferrite heating. In specific cases, for instance beam scrubbing, the temperature of certain ferrite yokes went beyond the Curie point. Several retrofit impedance reduction techniques have been investigated theoretically and with practical tests. We report on experience gained during the 2004 SPS operation with resistively coated ceramic inserts in terms of kicker heating, pulse rise time, operating voltage, and vacuum behaviour. For another technique using interleaved metallic stripes we observed significant improvements in bench measurements. Advantages and drawbacks of both methods and potential combinations of them are discussed and simulation as well as measured data are shown. Prospects for further improvements beyond 2006 are briefly outlined.

Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

Science.gov (United States)

Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

2018-06-01

The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

Preparation and characterization of thick metastable sputter deposits

International Nuclear Information System (INIS)

Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

1975-01-01

High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

Proton sputtering. Final report

International Nuclear Information System (INIS)

Finfgeld, C.R.

1975-01-01

This research provides sputtering yields as a function of energy for H + and D + on several representative pure metallic elements, in the absence of surface contaminants. The experimental technique and apparatus are described. Data are given for Au, Co, Ta, W, and Mo

A compact CMA spectrometer with axially integrated hybrid electron-ion gun for ISS, AES and sputter depth profile analysis

International Nuclear Information System (INIS)

Gisler, E.; Bas, E.B.

1986-01-01

Until now, the combined application of electrons and ions in surface analysis required two separate sources for electrons and ions with different incidence angles. The newly developed hybrid electron-ion gun, however, allows bombardment of the same sample area both with noble gas ions and with electrons coming from the same direction. By integrating such a hybrid gun axially in a cylindrical mirror energy analyser (CMA) a sensitive compact single flange spectrometer obtains for ion scattering spectroscopy (ISS), Auger electron spectroscopy (AES), and sputtering all within normal beam incidence. This concept makes accurate beam centering very easy. Additionally, the bombardment from the same direction both for sputtering and for surface analysis brings advantages in depth profiling. The scattering angle for ISS has a constant value of about 138 0 . The hybrid gun delivers typically an electron beam current of -20μA at 3keV for AES, and an ion beam current of +40 nA and +1.2μA at 2 keV for ISS and sputtering respectively. The switching time between ISS, AES, and sputtering mode is about 0.1 s. So this system is best suited for automatically controlled depth profile analysis. The design and operation of this new system will be described and some applications will be discussed. (author)

POLYMER COMPOSITE FILMS WITH SIZE-SELECTED METAL NANOPARTICLES FABRICATED BY CLUSTER BEAM TECHNIQUE

DEFF Research Database (Denmark)

Ceynowa, F. A.; Chirumamilla, Manohar; Popok, Vladimir

2017-01-01

Formation of polymer films with size-selected silver and copper nanoparticles (NPs) is studied. Polymers are prepared by spin coating while NPs are fabricated and deposited utilizing a magnetron sputtering cluster apparatus. The particle embedding into the films is provided by thermal annealing...... after the deposition. The degree of immersion can be controlled by the annealing temperature and time. Together with control of cluster coverage the described approach represents an efficient method for the synthesis of thin polymer composite layers with either partially or fully embedded metal NPs....... Combining electron beam lithography, cluster beam deposition and thermal annealing allows to form ordered arrays of metal NPs on polymer films. Plasticity and flexibility of polymer host and specific properties added by coinage metal NPs open a way for different applications of such composite materials...

C60 ion sputtering of layered organic materials

International Nuclear Information System (INIS)

Shard, Alexander G.; Green, Felicia M.; Gilmore, Ian S.

2008-01-01

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C 60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.

Electron Beam Polarization Measurement Using Touschek Lifetime Technique

Energy Technology Data Exchange (ETDEWEB)

Sun, Changchun; /Duke U., DFELL; Li, Jingyi; /Duke U., DFELL; Mikhailov, Stepan; /Duke U., DFELL; Popov, Victor; /Duke U., DFELL; Wu, Wenzhong; /Duke U., DFELL; Wu, Ying; /Duke U., DFELL; Chao, Alex; /SLAC; Xu, Hong-liang; /Hefei, NSRL; Zhang, Jian-feng; /Hefei, NSRL

2012-08-24

Electron beam loss due to intra-beam scattering, the Touschek effect, in a storage ring depends on the electron beam polarization. The polarization of an electron beam can be determined from the difference in the Touschek lifetime compared with an unpolarized beam. In this paper, we report on a systematic experimental procedure recently developed at Duke FEL laboratory to study the radiative polarization of a stored electron beam. Using this technique, we have successfully observed the radiative polarization build-up of an electron beam in the Duke storage ring, and determined the equilibrium degree of polarization and the time constant of the polarization build-up process.

Influence of surface topography on the sputtering yields of silver

International Nuclear Information System (INIS)

Pan Jisheng; Wang Zhenxia; Tao Zhenlan; Zhang Jiping

1992-01-01

The sputtering yields of silver have been measured as a function of the fluence of incident Ar + ions (27 keV) using the collector technique and RBS analysis. The irradiated surface was examined by scanning electron microscopy (SEM). It is shown that the sputtering yields of surfaces with topography are enhanced relative to smooth surfaces of silver, but the extent of the enhancement depends on the irradiation dose. The experimental results can be explained assuming that the surface topography and sputtering yield are a function of incident angle. It is obvious that the surface topography is an important factor to influence the sputtering yield. The term ''apparent sputtering yield'' has specifically been used when referring to the experimental sputtering yield of a surface with topography, to emphasize the difference with a smooth surface. (orig.)

Ion-induced sputtering

International Nuclear Information System (INIS)

Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

1983-01-01

The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

Ion beams in materials processing and analysis

CERN Document Server

Schmidt, Bernd

2012-01-01

This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

International Nuclear Information System (INIS)

Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

2002-01-01

We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

Resonance ionization of sputtered atoms: Progress toward a quantitative technique

International Nuclear Information System (INIS)

Calaway, W.F.; Pellin, M.J.; Young, C.E.; Whitten, J.E.; Gruen, D.M.; Coon, S.R.; Texas Univ., Austin, TX; Wiens, R.C.; Burnett, D.S.; Stingeder, G.; Grasserbauer, M.

1992-01-01

The combination of RIMS and ion sputtering has been heralded as the ideal means of quantitatively probing the surface of a solid. While several laboratories have demonstrated the extreme sensitivity of combining RIMS with sputtering, less effort has been devoted to the question of accuracy. Using the SARISA instrument developed at Argonne National Laboratory, a number of well-characterized metallic samples have been analyzed. Results from these determinations have been compared with data obtained by several other analytical methods. One significant finding is that impurity measurements down to ppb levels in metal matrices can be made quantitative by employing polycrystalline metal foils as calibration standards. This discovery substantially reduces the effort required for quantitative analysis since a single standard can be used for determining concentrations spanning nine orders of magnitude

Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

International Nuclear Information System (INIS)

Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

2002-01-01

An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

Sputtered catalysts

International Nuclear Information System (INIS)

Tyerman, W.J.R.

1978-01-01

A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

Fundamental limits to imaging resolution for focused ion beams

International Nuclear Information System (INIS)

Orloff, J.; Swanson, L.W.; Utlaut, M.

1996-01-01

This article investigates the limitations on the formation of focused ion beam images from secondary electrons. We use the notion of the information content of an image to account for the effects of resolution, contrast, and signal-to-noise ratio and show that there is a competition between the rate at which small features are sputtered away by the primary beam and the rate of collection of secondary electrons. We find that for small features, sputtering is the limit to imaging resolution, and that for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may limit the resolution in some cases. copyright 1996 American Vacuum Society

Ion source techniques for high-speed processing of material surface by ion beams

International Nuclear Information System (INIS)

Ishikawa, Junzo

1990-01-01

The present paper discusses some key or candidate techniques for future ion source development and such ion sources developed by the author. Several types of microwave ion sources for producing low charge state ions have been developed in Japan. When a microwave plasma cathode developed by the author is adapted to a Kaufman type ion source, the electron emission currents are found to be 2.5 A for argon gas and 0.5-0.9 A for oxygen gas. An alternative ionization method for metal atoms is strongly required for high-speed processing of material surface by metal-ion beams. Detailed discussion is made of collisional ionization of vaporized atoms, and negative-ion production (secondary negative-ion emission by sputtering). An impregnated electrode type liquid-metal ion source developed by the author, which has a porous tip structure, is described. The negative-ion production efficiency is quite high. The report also presents a neutral and ionized alkaline-metal bombardment type heavy negative-ion source, which consists of a cesium plasma ion source, suppressor, target electrode, negative-ion extraction electrode, and einzel lens. (N.K.)

Reactive dual magnetron sputtering for large area application

International Nuclear Information System (INIS)

Struempfel, J.

2002-01-01

Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

Focused-ion beam patterning of organolead trihalide perovskite for subwavelength grating nanophotonic applications

KAUST Repository

Alias, Mohd Sharizal

2015-07-30

The coherent amplified spontaneous emission and high photoluminescence quantum efficiency of organolead trihalide perovskite have led to research interest in this material for use in photonic devices. In this paper, the authors present a focused-ion beam patterning strategy for methylammonium lead tribromide (MAPbBr3) perovskite crystal for subwavelength grating nanophotonic applications. The essential parameters for milling, such as the number of scan passes, dwell time, ion dose, ion current, ion incident angle, and gas-assisted etching, were experimentally evaluated to determine the sputtering yield of the perovskite. Based on our patterning conditions, the authors observed that the sputtering yield ranged from 0.0302 to 0.0719 μm3/pC for the MAPbBr3 perovskite crystal. Using XeF2 for the focused-ion beam gas-assisted etching, the authors determined that the etching rate was reduced to between 0.40 and 0.97, depending on the ion dose, compared with milling with ions only. Using the optimized patterning parameters, the authors patterned binary and circular subwavelength grating reflectors on the MAPbBr3 perovskite crystal using the focused-ion beam technique. Based on the computed grating structure with around 97% reflectivity, all of the grating dimensions (period, duty cycle, and grating thickness) were patterned with nanoscale precision (>±3 nm), high contrast, and excellent uniformity. Our results provide a platform for utilizing the focused-ion beam technique for fast prototyping of photonic nanostructures or nanodevices on organolead trihalide perovskite.

Study of magnetic properties and relaxation in amorphous Fe73.9Nb3.1Cu0.9Si13.2B8.9 thin films produced by ion beam sputtering

International Nuclear Information System (INIS)

Celegato, F.; Coiesson, M.; Magni, A.; Tiberto, P.; Vinai, F.; Kane, S. N.; Modak, S. S.; Gupta, A.; Sharma, P.

2007-01-01

Amorphous Fe 73.9 Nb 3.1 Cu 0.9 Si 13.2 B 8.9 thin films have been produced by ion beam sputtering with two different beam energies (500 and 1000 eV). Magnetic measurements indicate that the samples display a uniaxial magnetic anisotropy, especially for samples prepared with the lower beam energy. Magnetization relaxation has been measured on both films with an alternating gradient force magnetometer and magneto-optical Kerr effect. Magnetization relaxation occurs on time scales of tens of seconds and can be described with a single stretched exponential function. Relaxation intensity turns out to be higher when measured along the easy magnetization axis

Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

International Nuclear Information System (INIS)

Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

2008-01-01

Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

Electronic sputtering of biomolecules and its application in mass spectrometry

International Nuclear Information System (INIS)

Haakansson, P.; Sundqvist, B.U.R.

1989-01-01

In 1974 Macfarlane discovered that fast heavy ions from a 252-Cf source can desorb and ionize molecules from a solid surface. The mass of the molecules was determined by time-of-flight technique. It has been shown that the desorption mechanism is associated with the electron part of the stopping power of the primary ion and the name 'electron sputtering' has been adopted for the phenomenon to distinguish it from the well-known sputtering process with ions of KeV energy. A review of electronic sputtering of biomolecules will be given as well as recent measurements on Langmuir-Blodgett films. One important application of electronic sputtering is in the field of mass spectrometry. With this technique large and nonvolatile molecules can be studied. Particularly adsorption of biomolecules to a nitrocellulose backing has proven to be very useful. Examples will be given of mass spectra from peptides with a molecular weight above 20,000 u. (author)

Fluence-dependent sputtering yield of micro-architectured materials

Energy Technology Data Exchange (ETDEWEB)

Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

2017-06-15

Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

Nanostructured hydroxyapatite/TiO2 composite coating applied to commercially pure titanium by a co-sputtering technique

International Nuclear Information System (INIS)

Lee, Baek-Hee; Koshizaki, Naoto

2008-01-01

We demonstrate an approach for the coating of nanostructured hydroxyapatite(HAP)/TiO 2 composite on commercially pure Ti (CP-Ti) by a co-sputtering process. HAP/TiO 2 composite film was obtained by controlling the processing pressure. It was observed that decomposition of HAP into CaO was easily induced during sputtering at 0.53 Pa, a typical sputtering condition for film deposition. However, HAP/TiO 2 composite film was obtained with the sputtering pressure of 2.67 Pa. The Ca/P ratio was nearly maintained at 1.66 by sputter deposition at 2.67 Pa. We further confirmed by analysis of plasma spectral emission that the variation of the hydroxyl (OH) radical present was due to the Ar pressure during sputtering. It has been shown that HAP coatings are dependent on the processing pressure, which the hydroxyl radical requires in order to create HAP

Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

International Nuclear Information System (INIS)

Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

2006-01-01

TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

Developments in broad-beam, ion-source technology and applications

International Nuclear Information System (INIS)

Kaufman, H.R.; Harper, J.M.E.; Cuomo, J.J.

1982-01-01

Recent advances in broad-beam, ion-source technology are summarized, including low-energy ion optics, improved extraction grid fabrication, a compact ion-source design and a gridless ion-source design. Recent applications have emphasized concepts such as stress modification of vapor deposited films, very low energy ion beams to minimize the physical sputtering portion in reactive etching, and the use of multiple sources and targets to sputter deposit alloys and compounds. A comprehensive critical review by the same authors appears concurrently, describing in detail the developments in broad-beam, ion-source technology 1 and the applications of these sources. 2

Quantitative sputter profiling at surfaces and interfaces

International Nuclear Information System (INIS)

Kirschner, J.; Etzkorn, H.W.

1981-01-01

The key problem in quantitative sputter profiling, that of a sliding depth scale has been solved by combined Auger/X-ray microanalysis. By means of this technique and for the model system Ge/Si (amorphous) the following questions are treated quantitatively: shape of the sputter profiles when sputtering through an interface and origin of their asymmetry; precise location of the interface plane on the depth profile; broadening effects due to limited depth of information and their correction; origin and amount of bombardment induced broadening for different primary ions and energies; depth dependence of the broadening, and basic limits to depth resolution. Comparisons are made to recent theoretical calculations based on recoil mixing in the collision cascade and very good agreement is found

Secondary ion formation during electronic and nuclear sputtering of germanium

Science.gov (United States)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

Science.gov (United States)

Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

2017-11-01

The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

Isotope puzzle in sputtering

International Nuclear Information System (INIS)

Zheng Liping

1998-01-01

Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

Beam dynamics in rf guns and emittance correction techniques

International Nuclear Information System (INIS)

Serafini, L.

1994-01-01

In this paper we present a general review of beam dynamics in a laser-driven rf gun. The peculiarity of such an accelerating structure versus other conventional multi-cell linac structures is underlined on the basis of the Panofsky-Wenzel theorem, which is found to give a theoretical background for the well known Kim's model. A basic explanation for some proposed methods to correct rf induced emittance growth is also derived from the theorem. We also present three emittance correction techniques for the recovery of space-charge induced emittance growth, namely the optimum distributed disk-like bunch technique, the use of rf spatial harmonics to correct spherical aberration induced by space charge forces and the technique of emittance filtering by clipping the electron beam. The expected performances regarding the beam quality achievable with different techniques, as predicted by scaling laws and simulations, are analyzed, and, where available, compared to experimental results. (orig.)

Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

International Nuclear Information System (INIS)

Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

1986-01-01

The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

Sputtering of carbon using hydrogen ion beams with energies of 60–800 eV

Energy Technology Data Exchange (ETDEWEB)

Sidorov, Dmitry S., E-mail: dmitrisidoroff@rambler.ru [Nizhny Novgorod State University, 23 Gagarina Avenue, Nizhny Novgorod, Nizhny Novgorod Region 603950 (Russian Federation); Chkhalo, Nikolay I., E-mail: chkhalo@ipm.sci-nnov.ru [Institute for Physics of Microstructures RAS, Academicheskaya Str. 7, Afonino, Nizhny Novgorod Region, Kstovsky District, Kstovo Region 603087 (Russian Federation); Mikhailenko, Mikhail S.; Pestov, Alexey E.; Polkovnikov, Vladimir N. [Institute for Physics of Microstructures RAS, Academicheskaya Str. 7, Afonino, Nizhny Novgorod Region, Kstovsky District, Kstovo Region 603087 (Russian Federation)

2016-11-15

This article presents the result of a study on the sputtering of carbon films by low-energy hydrogen ions. In particular, the etching rate and surface roughness were measured. The range of energies where the sputtering switches from pure chemical to a combination of chemical and physical mechanisms was determined. It is shown that Sigmund’s theory for ion etching does not work well for fields of energy less than 150 eV and that it accurately describes the dependence of a sputtering coefficient on ion energy for energies greater than 300 eV. A strong smoothing effect for the surface of carbon film was also found. This result is interesting in itself and for its significance for the manufacture of super-smooth surfaces for X-ray applications.

MultiSIMNRA: A computational tool for self-consistent ion beam analysis using SIMNRA

International Nuclear Information System (INIS)

Silva, T.F.; Rodrigues, C.L.; Mayer, M.; Moro, M.V.; Trindade, G.F.; Aguirre, F.R.; Added, N.; Rizzutto, M.A.; Tabacniks, M.H.

2016-01-01

Highlights: • MultiSIMNRA enables the self-consistent analysis of multiple ion beam techniques. • Self-consistent analysis enables unequivocal and reliable modeling of the sample. • Four different computational algorithms available for model optimizations. • Definition of constraints enables to include prior knowledge into the analysis. - Abstract: SIMNRA is widely adopted by the scientific community of ion beam analysis for the simulation and interpretation of nuclear scattering techniques for material characterization. Taking advantage of its recognized reliability and quality of the simulations, we developed a computer program that uses multiple parallel sessions of SIMNRA to perform self-consistent analysis of data obtained by different ion beam techniques or in different experimental conditions of a given sample. In this paper, we present a result using MultiSIMNRA for a self-consistent multi-elemental analysis of a thin film produced by magnetron sputtering. The results demonstrate the potentialities of the self-consistent analysis and its feasibility using MultiSIMNRA.

Friction of self-lubricating surfaces by ion beam techniques. Final technical report

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.S.; Rai, A.K.

1992-05-01

UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO{sub 2}, Al{sub 2}O{sub 3}, Si{sub 3}N{sub 4}, steel and Ni-base superalloy. The lubricant additives chosen were BaF{sub 2}/CaF{sub 2}Ag, MoS{sub 2}, WS{sub 2}and B{sub 2}O{sub 3}. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS{sub 2} can be synthesized by co-implantation of Mo{sup +} and S{sup +} in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS{sub 2} films of thicknesses {approximately}7500{Angstrom} on ceramic materials such as sapphire, Si{sub 3}N{sub 4} and ZrO{sub 3} were improved by ten to thousand fold after 2 Mev Ag{sup +} ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF/CaF{sub 2}/Ag composites.

Giant metal sputtering yields induced by 20-5000 keV/atom gold clusters

International Nuclear Information System (INIS)

Andersen, H.H.; Brunelle, A.; Della-Negra, S.; Depauw, J.; Jacquet, D.; Le Beyec, Y.

1997-01-01

Very large non-linear effects have been found in cluster-induced metal sputtering over a broad projectile energy interval for the first time. Recently available cluster beams from tandem accelerators have allowed sputtering yield measurements to be made with Au 1 to Au 5 from 20 keV/atom to 5 MeV/atom. The cluster-sputtering yield maxima were found at the same total energy but not at the same energy/atom as expected. For Au 5 a yield as high as 3000 was reached at 150 keV/atom while the Au 1 yield was only 55 at the same velocity. The Sigmund-Claussen thermal spike theory, which fits published data at low energy, cannot reproduce our extended new data set. (author)

Dual beam organic depth profiling using large argon cluster ion beams

Science.gov (United States)

Holzweber, M; Shard, AG; Jungnickel, H; Luch, A; Unger, WES

2014-01-01

Argon cluster sputtering of an organic multilayer reference material consisting of two organic components, 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl (NPB) and aluminium tris-(8-hydroxyquinolate) (Alq3), materials commonly used in organic light-emitting diodes industry, was carried out using time-of-flight SIMS in dual beam mode. The sample used in this study consists of a ∽400-nm-thick NPB matrix with 3-nm marker layers of Alq3 at depth of ∽50, 100, 200 and 300 nm. Argon cluster sputtering provides a constant sputter yield throughout the depth profiles, and the sputter yield volumes and depth resolution are presented for Ar-cluster sizes of 630, 820, 1000, 1250 and 1660 atoms at a kinetic energy of 2.5 keV. The effect of cluster size in this material and over this range is shown to be negligible. © 2014 The Authors. Surface and Interface Analysis published by John Wiley & Sons Ltd. PMID:25892830

Novel non-intercepting diagnostic techniques for low-emittance relativistic electron beams

International Nuclear Information System (INIS)

Moran, M.J.; Chang, B.

1988-01-01

Relativistic electron beams are being generated with emittances low enough that diffraction radiation can be used for beam diagnostics. Techniques based on diffraction radiation can be used to measure the beam transverse momentum distribution and to measure the transverse spatial distribution. The radiation is intense and can be in the visible spectral region where optical diagnostic techniques can be used to maximum advantage. 4 refs. 3 figs

Study of the ion sputter-machining, 1

International Nuclear Information System (INIS)

Miyamoto, Iwao; Taniguchi, Norio

1979-01-01

A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

Combined sputtering yield and surface topography development studies on Si

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

1981-01-01

The sputtering yield-incidence angle function has been measured for 8 keV Ar + ions incident on Si by direct scanning electron microscope observation of the depths of sputtered craters on substrate boundaries. This function displays a maximum sputtering yield at an angle thetasub(p) approximately equal to 40 0 to the surface normal. The sequential ion fluence dependence of features developed beneath local surface contaminant was then studied, quasi dynamically, in the same on-line ion source-S.E.M. system. During erosion of the contaminant a steeply elevated pillar of Si forms, which then transforms to a cone, again of high elevation angle >>thetasub(p). This cone is gradually eroded into the surrounding surface with no special significance associated with orientations of angle thetasub(p). Pedal depressions surrounding the pillar-cone system are also noted. The reasons for these observations and their relevance to ion beam surface channel etching are discussed. (Auth.)

Carbonate as sputter target material for rapid {sup 14}C AMS

Energy Technology Data Exchange (ETDEWEB)

Longworth, Brett E., E-mail: blongworth@whoi.edu [Department of Geology and Geophysics, Woods Hole Oceanographic Institution, Woods Hole, MA (United States); Robinson, Laura F. [Department of Marine Chemistry and Geochemistry, Woods Hole Oceanographic Institution, Woods Hole, MA (United States); Roberts, Mark L.; Beaupre, Steven R.; Burke, Andrea [Department of Geology and Geophysics, Woods Hole Oceanographic Institution, Woods Hole, MA (United States); Jenkins, William J. [Department of Marine Chemistry and Geochemistry, Woods Hole Oceanographic Institution, Woods Hole, MA (United States)

2013-01-15

This paper describes a technique for measuring the {sup 14}C content of carbonate samples by producing C{sup -} ions directly in the negative ion sputter source of an accelerator mass spectrometer (AMS) system. This direct analysis of carbonate material eliminates the time and expense of graphite preparation. Powdered carbonate is mixed with titanium powder, loaded into a target cartridge, and compressed. Beam currents for optimally-sized carbonate targets (0.09-0.15 mg C) are typically 10-20% of those produced by optimally-sized graphite targets (0.5-1 mg C). Modern (>0.8 Fm) samples run by this method have standard deviations of 0.009 Fm or less, and near-modern samples run as unknowns agree with values from traditional hydrolysis/graphite to better than 2%. Targets with as little as 0.06 mg carbonate produce useable ion currents and results, albeit with increased error and larger blank. In its current state, direct sputtering is best applied to problems where a large number of analyses with lower precision are required. These applications could include age surveys of deep-sea corals for determination of historic population dynamics, to identify samples that would benefit from high precision analysis, and for growth rate studies of organisms forming carbonate skeletons.

Solar system sputtering

Science.gov (United States)

Tombrello, T. A.

1982-01-01

The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

Science.gov (United States)

Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

2013-11-01

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

Energy Technology Data Exchange (ETDEWEB)

Lei, Hao, E-mail: haolei@imr.ac.cn [State Key Laboratory for Corrosion and Protection, Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Meihan [College of Mechanical Engineering, Shenyang University, Shenyang 110044 (China); Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka [Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297 (Japan)

2013-11-15

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers

International Nuclear Information System (INIS)

Debelle, A.

2006-09-01

We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress (∼ 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a 0 , solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a 0 values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

Development of neutral beam source using electron beam excited plasma

International Nuclear Information System (INIS)

Hara, Yasuhiro; Hamagaki, Manabu; Mise, Takaya; Hara, Tamio

2011-01-01

A low-energy neutral beam (NB) source, which consists of an electron-beam-excited plasma (EBEP) source and two carbon electrodes, has been developed for damageless etching of ultra-large-scale integrated (ULSI) devices. It has been confirmed that the Ar ion beam energy was controlled by the acceleration voltage and the beam profile had good uniformity over the diameter of 80 mm. Dry etching of a Si wafer at the floating potential has been carried out by Ar NB. Si sputtering yield by an Ar NB clearly depends on the acceleration voltage. This result shows that the NB has been generated through the charge exchange reaction from the ion beam in the process chamber. (author)

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Science.gov (United States)

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Radioactive ion beams and techniques for solid state research

International Nuclear Information System (INIS)

Correia, J.G.

1998-01-01

In this paper we review the most recent and new applications of solid state characterization techniques using radioactive ion beams. For such type ofresearch, high yields of chemically clean ion beams of radioactive isotopesare needed which are provided by the on-line coupling of high resolution isotope separators to particle accelerators, such as the isotope separator on-line (ISOLDE) facility at CERN. These new experiments are performed by an increasing number of solid state groups. They combine nuclear spectroscopic techniques such as Moessbauer, perturbed angular correlations (PAC) and emission channeling with the traditional non-radioactive techniques liked deep level transient spectroscopy (DLTS) and Hall effect measurements. Recently isotopes of elements, not available before, were successfully used in new PAC experiments, and the first photoluminescence (PL) measurements, where the element transmutation plays the essential role on the PL peak identification, have been performed. The scope of applications of radioactive ion beams for research in solid state physics will be enlarged in the near future, with the installation at ISOLDE of a post-accelerator device providing radioactive beams with energies ranging from a few keV up to a few MeV. (orig.)

Ion Beams: A Powerful Tool for Making New Functional Materials

International Nuclear Information System (INIS)

Dev, B. N.

2010-01-01

It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

Monte Carlo simulations of silicon sputtering by argon ions and an approach for comparison with molecular dynamic results

Energy Technology Data Exchange (ETDEWEB)

Feder, Rene; Frost, Frank; Mayr, Stefan G.; Neumann, Horst; Bundesmann, Carsten [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

2012-07-01

Ion beam sputter processes deliver some intrinsic features influencing the growing film properties. Utilisation of these features needs to know how primary ion properties and geometrical process conditions influence the energy and spatial distribution of the sputtered and scattered particles. Beside complex experiments simulations are helpful to explain the correlation between primary parameters and thin film properties. The paper presents first results of two simulation codes with completely different approaches: Monte Carlo (MC) calculations with help of the well known TRIM.SP code and Molecular Dynamics calculations with an in-house developed code. First results of both simulation principles are compared for Argon ion bombardment on a Silicon target. Furthermore, a special experimental setup is outlined for validation of modelling. The setup allows the variation of ion beam parameters (ion species, ion energy, ion incidence angle on the target) and the measurement of the properties of sputtered and scattered particles.

Tungsten self-sputtering yield with different incidence angles and target temperatures

International Nuclear Information System (INIS)

Bandourko, V.; Nakamura, K.; Akiba, M.; Jimbou, R.

1998-01-01

The self-sputtering of different types of tungsten due to 1 keV W + bombardment at temperatures of 25 C and 600 C and incident angles in the range of 30-60 was studied by means of the weight loss method. The experimental data at room temperature agreed reasonably with the results of TRIM calculations. Enhanced self-sputtering yields due to beam-induced desorption of WO 2 were found at a temperature of 600 C. The weight loss of W-Cu composite is larger than that of the CVD-W and ps-W under the same irradiation conditions due to the selective removal of copper. (orig.)

Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

International Nuclear Information System (INIS)

Karuppasamy, A.; Subrahmanyam, A.

2007-01-01

Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

Applying field mapping refractive beam shapers to improve holographic techniques

Science.gov (United States)

Laskin, Alexander; Williams, Gavin; McWilliam, Richard; Laskin, Vadim

2012-03-01

Performance of various holographic techniques can be essentially improved by homogenizing the intensity profile of the laser beam with using beam shaping optics, for example, the achromatic field mapping refractive beam shapers like πShaper. The operational principle of these devices presumes transformation of laser beam intensity from Gaussian to flattop one with high flatness of output wavefront, saving of beam consistency, providing collimated output beam of low divergence, high transmittance, extended depth of field, negligible residual wave aberration, and achromatic design provides capability to work with several laser sources with different wavelengths simultaneously. Applying of these beam shapers brings serious benefits to the Spatial Light Modulator based techniques like Computer Generated Holography or Dot-Matrix mastering of security holograms since uniform illumination of an SLM allows simplifying mathematical calculations and increasing predictability and reliability of the imaging results. Another example is multicolour Denisyuk holography when the achromatic πShaper provides uniform illumination of a field at various wavelengths simultaneously. This paper will describe some design basics of the field mapping refractive beam shapers and optical layouts of their applying in holographic systems. Examples of real implementations and experimental results will be presented as well.

Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering

Science.gov (United States)

Das, Mangal; Kumar, Amitesh; Singh, Rohit; Than Htay, Myo; Mukherjee, Shaibal

2018-02-01

Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and ‘learning behavior (LB)’ are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An ‘LB’ function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.

Ion beam techniques for analyzing polymers irradiated by ions

International Nuclear Information System (INIS)

Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

1992-01-01

In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

2016-12-30

Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

Deuterium sputtering of Li and Li-O films

Science.gov (United States)

Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

2017-10-01

Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

Techniques for intense-proton-beam profile measurements

International Nuclear Information System (INIS)

Gilpatrick, J.D.

1998-01-01

In a collaborative effort with industry and several national laboratories, the Accelerator Production of Tritium (APT) facility and the Spallation Neutron Source (SNS) linac are presently being designed and developed at Los Alamos National Laboratory (LANL). The APT facility is planned to accelerate a 100-mA H + cw beam to 1.7 GeV and the SNS linac is planned to accelerate a 1- to 4-mA-average, H - , pulsed-beam to 1 GeV. With typical rms beam widths of 1- to 3-mm throughout much of these accelerators, the maximum average-power densities of these beams are expected to be approximately 30- and 1-MW-per-square millimeter, respectively. Such power densities are too large to use standard interceptive techniques typically used for acquisition of beam profile information. This paper summarizes the specific requirements for the beam profile measurements to be used in the APT, SNS, and the Low Energy Development Accelerator (LEDA)--a facility to verify the operation of the first 20-MeV section of APT. This paper also discusses the variety of profile measurement choices discussed at a recent high-average-current beam profile workshop held in Santa Fe, NM, and will present the present state of the design for the beam profile measurements planned for APT, SNS, and LEDA

Establishment of an ASEAN Ion Beam Analysis Centre for Material Characterizations at Chiang Mai University

International Nuclear Information System (INIS)

Kamwanna, T.; Junphong, P.; Yu, L.D.; Singkarat, S.; Intarasiri, S.; Suwannakachorn, D.

2015-01-01

A comprehensive ion beam analysis centre unique in the ASEAN (Association of Southeast Asian Nations) region has been established at Chiang Mai University, Thailand. The centre is equipped with a 1.7 MV Tandetron tandem accelerator and a 300 kV medium energy ion beam accelerator for ion beam analysis. The Tandetron accelerator employs two ion sources, a duoplasmatron ion source and a sputter ion source, capable of producing ion beams of both light species (hydrogen and helium) and heavy species. The beamline is currently able to perform ion beam analysis techniques, such as Rutherford backscattering spectrometry (RBS), RBS/channelling, elastic backscattering (EBS), particle induced x ray emission (PIXE) and ionoluminescence (IL) with the assistance of commercial and self-developed software. The medium energy ion accelerator features an ns pulsed beam so that time of flight (ToF) RBS analysis using medium energy ion beams is available for detailed analysis of materials. Ion beam analysis experiments and applications have been vigorously developed for the real time characterization of various materials. Examples are presented and qualities of the ion beam analysis techniques are discussed. (author)

Small sample analysis using sputter atomization/resonance ionization mass spectrometry

International Nuclear Information System (INIS)

Christie, W.H.; Goeringer, D.E.

1986-01-01

We have used secondary ion mass spectrometry (SIMS) to investigate the emission of ions via argon sputtering from U metal, UO 2 , and U 3 O 8 samples. We have also used laser resonance ionization techniques to study argon-sputtered neutral atoms and molecules emitted from these same samples. For the case of U metal, a significant enhancement in detection sensitivity for U is obtained via SA/RIMS. For U in the fully oxidized form (U 3 O 8 ), SA/RIMS offers no improvement in U detection sensitivity over conventional SIMS when sputtering with argon. 9 refs., 1 fig., 2 tabs

The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

International Nuclear Information System (INIS)

Huang, Y.; Vuchic, B.V.; Baldo, P.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.H.

1996-12-01

The mechanisms of the sputter-induced orientation change in YBa 2 Cu 3 O 7-x (YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change

Beam, multi-beam and broad beam production with COMIC devices

International Nuclear Information System (INIS)

Sortais, P.; Lamy, T.; Medard, J.; Angot, J.; Peaucelle, C.

2012-01-01

The COMIC discharge cavity is a very versatile technology. We will present new results and devices that match new applications like: molecular beams, ultra compact beam line for detectors calibrations, quartz source for on-line application, high voltage platform source, sputtering /assistance broad beams and finally, a quite new use, high energy multi-beam production for surface material modifications. In more details, we will show that the tiny discharge of COMIC can mainly produce molecular ions (H 3+ ). We will present the preliminary operation of the fully quartz ISOLDE COMIC version, in collaboration with IPN Lyon, we will present a first approach for a slit extraction version of a three cavity device, and after discussing about various extraction systems on the multi discharge device (41 cavities) we will show the low energy broad beam (2 KV) and high energy multi-beams (10 beams up to 30 KV) productions. We will specially present the different extraction systems adapted to each application and the beams characteristics which are strongly dependent on the voltage distribution of an accel-accel two electrodes extraction system. The paper is followed by the slides of the presentation. (authors)

A comparison of nodular defect seed geometeries from different deposition techniques

International Nuclear Information System (INIS)

Stolz, C.J.; Tench, R.J.; Kozlowski, M.R.; Fornier, A.

1995-01-01

A focused ion-beam milling instrument commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument's scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO 2 /SiO 2 and Ta 2 O 5 /SiO 2 coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between the nodule and thin film provide insight into the mechanical stability of the nodule. Significant differences in the seed composition, geometry of nodular growth and mechanical stability of the defects for sputtered versus e-beam coatings are reported. Differences in seed shape were also observed from different coating vendors using e-beam deposition of HfO 2 /SiO 2 coatings

Hot oxygen atoms: Their generation and chemistry. [Production by sputtering; reaction with butenes

Energy Technology Data Exchange (ETDEWEB)

Ferrieri, R.A.; Chu, Yung Y.; Wolf, A.P.

1987-01-01

Oxygen atoms with energies between 1 and 10 eV have been produced through ion beam sputtering from metal oxide targets. Argon ion beams were used on Ta/sub 2/O/sub 5/ and V/sub 2/O/sub 5/. Results show that some control may be exerted over the atom's kinetic energy by changing the target. Reactions of the hot O(/sup 3/P) with cis- and trans-butenes were investigated. (DLC)

125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

Science.gov (United States)

Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

2011-01-01

Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

Iodine Beam Dump Design and Fabrication

Science.gov (United States)

Polzin, K. A.; Bradley, D. E.

2017-01-01

During the testing of electric thrusters, high-energy ions impacting the walls of a vacuum chamber can cause corrosion and/or sputtering of the wall materials, which can damage the chamber walls. The sputtering can also introduce the constituent materials of the chamber walls into an experiment, with those materials potentially migrating back to the test article and coating it with contaminants over time. The typical method employed in this situation is to install a beam dump fabricated from materials that have a lower sputter yield, thus reducing the amount of foreign material that could migrate towards the test article or deposit on anything else present in the vacuum facility.

Dual-beam focused ion beam/electron microscopy processing and metrology of redeposition during ion-surface 3D interactions, from micromachining to self-organized picostructures.

Science.gov (United States)

Moberlychan, Warren J

2009-06-03

Focused ion beam (FIB) tools have become a mainstay for processing and metrology of small structures. In order to expand the understanding of an ion impinging a surface (Sigmund sputtering theory) to our processing of small structures, the significance of 3D boundary conditions must be realized. We consider ion erosion for patterning/lithography, and optimize yields using the angle of incidence and chemical enhancement, but we find that the critical 3D parameters are aspect ratio and redeposition. We consider focused ion beam sputtering for micromachining small holes through membranes, but we find that the critical 3D considerations are implantation and redeposition. We consider ion beam self-assembly of nanostructures, but we find that control of the redeposition by ion and/or electron beams enables the growth of nanostructures and picostructures.

Cornell electron beam ion source

International Nuclear Information System (INIS)

Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

1981-01-01

An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

2014-03-24

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

The status and new trends of ion beam induced charge technique

International Nuclear Information System (INIS)

Lu Rongrong; Qiu Huiyuan; Zhu Dezhang

2002-01-01

Ion beam induced charge technique (IBIC) with low beam current (fA level) and high efficiency is a new development of nuclear microscopy. It has been widely applied to the fields of semiconductor and microelectronic materials. The principle and the experimental method of the IBIC technique were described and reviewed its status and new trends were reviewed

Precise atomic-scale investigations of material sputtering process by light gas ions in pre-threshold energy region

CERN Document Server

Suvorov, A L

2002-01-01

Foundation and prospects of the new original technique of the sputtering yield determination of electro-conducting materials and sub-atomic layers on their surface by light gas ions the pre-threshold energy region (from 10 to 500 eV) are considered. The technique allows to identify individual surface vacancies, i.e., to count individual sputtered atoms directly. A short review of the original results obtained by using the developed techniques is given. Data are presented and analyzed concerning energy thresholds of the sputtering onset and energy dependences of sputtering yield in the threshold energy region for beryllium, tungsten, tungsten oxide, alternating tungsten-carbon layers, three carbon materials as well as for sub-atomic carbon layers on surface of certain metals at their bombardment by hydrogen, deuterium and/or helium ions

Development of a computerized tomographic system based on the FAN-BEAM technique

International Nuclear Information System (INIS)

Junqueira, M.M.; Santos, C.A.C.; Borges, J.C.

1986-01-01

The Nuclear Instrumentation Laboratory, at COPPE/UFRJ, concentrates its researches in the development of computerized tomographic systems, looking for applications in industrial and medical non destructive analysing techniques. In this work we have projected and constructed a tomographic prototype, based on the FAN-BEAM technique for irradiating the object under analysis. An algorithm previously developed to analyse parallel beams, was modified and adapted to the FAN-BEAM geometry. (Author) [pt

Beam limiter for thermonuclear fusion devices

International Nuclear Information System (INIS)

Kaminsky, M.S.

1976-01-01

A beam limiter circumscribes the interior surface of a vacuum vessel to inhibit collisions of contained plasma and the vessel walls. The cross section of the material making up the limiter has a flatsided or slightly concave portion of increased width towards the plasma and portions of decreased width towards the interior surface of the vessel. This configuration is designed to prevent a major fraction of the material sputtered, vaporized and blistered from the limiter from reaching the plasma. It also allows adequate heat transfer from the wider to the narrower portions. The preferred materials for the beam limiter are solids of sintered, particulate materials of low atomic number with low vapor pressure and low sputtering and blistering yields. 7 claims, 3 figures

Introduction to analytical techniques of beam-target interactions and resolutions

International Nuclear Information System (INIS)

Ruste, J.

1995-08-01

For several years, new analysis and observation techniques have been developed, which have considerably improved material research. Almost all these techniques are based on the interaction of a beam of 'primary particles' (electrons, photons, ions, particles, etc) with target. Correct and appropriate use of these techniques requires a good knowledge of these interactions and their consequences (emissions of 'secondary particles', modifications of the primary beam and target, etc). The first part of this report deals with the radiation/material interactions according to the nature of the radiation and its energy. The nature and consequences of the interaction of an electromagnetic wave, a beam of electrons, ions and neutrons are examined over an extended range of energy from MeV to MeV. Certain notions such as the analysis area, spatial resolutions or limits of detection can also be defined. In the second part, some of the most important and widespread techniques of analysis and observation are compared in terms of properties and performance. In particular, there is a brief principle of the technique, nature of the data obtained, spatial resolution, and the limits of detection with today's methods permit. (author). 5 refs., 23 figs., 9 tabs

Surface characterization after subaperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2010-07-01

In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

Application of a transverse phase-space measurement technique for high-brightness, H- beams to the GTA H- beam

International Nuclear Information System (INIS)

Johnson, K.F.; Garcia, R.C.; Rusthoi, D.P.; Sander, O.R.; Sandoval, D.P.; Shinas, M.A.; Smith, M.; Yuan, V.W.; Connolly, R.C.

1995-01-01

The Ground Test Accelerator (GTA) had the objective Of Producing a high-brightness, high-current H-beam. The major components were a 35 keV injector, a Radio Frequency Quadrupole (RFQ), an intertank matching section (IMS), and a drift tube linac (DTL), consisting of 10 modules. A technique for measuring the transverse phase-space of high-power density beams has been developed and tested. This diagnostic has been applied to the GTA H-beam. Experimental results are compared to the slit and collector technique for transverse phase-space measurements and to simulations

The influence of beam divergence on ion-beam induced surface patterns

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion-beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion-beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

Entrapment of krypton in sputter deposited metals: a storage medium for radioactive gases

International Nuclear Information System (INIS)

Tingey, G.L.; McClanahan, E.D.; Bayne, M.A.; Moss, R.W.

1979-04-01

Sputter deposition of metals with a negative substrate bias results in a deposit containing relatively large concentrations of the sputtering gas. This phenomenon has been applied as a technique for storage of the radioactive gas, 85 Kr, which is generated in nuclear fuels for power production. Alloys which sputter to yield an amorphous product have been shown to contain up to 12 atom % Kr [42 cm 3 of Kr(STP)/g of deposit; concentration equivalent to a gas at 4380 psi pressure]. Release from these metals occurs at so low a rate that extrapolation to long times yields a 85 Kr release at 300 0 C of about 0.06% in 100 years. A preliminary evaluation of the engineering feasibility and economics of the sputtering process indicates that 85 Kr can be effectively trapped in a solid matrix with currently available techniques on a scale required for handling DOE-generated waste or commercial reprocessed fuels and that the cost should not be a limiting factor

Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

International Nuclear Information System (INIS)

Greene, J.E.

1984-01-01

The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

A feasibility study of H{sup -} beam extraction technique using YAG laser

Energy Technology Data Exchange (ETDEWEB)

Meigo, Shin-ichiro; Hasegawa, Kazuo; Ikeda, Yujiro; Oigawa, Hiroyuki [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Aoki, Nobutada [Toshiba Power System Co., Ltd. (Japan); Nakagawa, Satoshi [Toshiba Co., Tokyo (Japan)

2002-12-01

Under a framework of JAERI-KEK joint project of high intensity proton accelerator, as for research and develop of the accelerator driven nuclear transmutation of the long lived radioactive nuclide, it is planed to built the Transmutation Physics Experiment Facility (TEF-P) and the Transmutation Engineering Experiment Facility (TEF-E). The TEF-P is used for the experiments for subcritical system coupled with a spallation neutron target bombarded with 600-MeV proton beam accelerated by the LINAC. To limit the maximum thermal power less than 500 W at the TEF-P, an incident beam power should be less than 10 W. On the contrary, at the TEF-E, high power beam of 200 kW is requested. Both high and low power beams are demanded for the transmutation facilities. It is difficult to deliver a low power beam to the TEF-P. Conventional beam extraction technique with a thin foil, is not desirable because the scattering of the beam at the foil requires the massive shield. Therefore, we study a new technique to extract a small portion of the beam precisely from the high intensity beam by using a laser beam. By a laser beam, H{sup -} in the beam from LINAC is partially changed to H{sup 0} beam so that a low current H{sup 0} beam can be obtained. As the cross section of the charge exchange reaction for H{sup -} ions has a peak around at a wave length of 1 {mu}m for photons, YAG laser is suitable for this charge exchange because of its 1.06 {mu}m wave length. It is derived that 10 W beam for 600-MeV proton can be extracted by the YAG laser with power of 2 J for each pulse of 25 Hz. By this technique, the pulse width for the extracted beam can be controlled by changing the time width of laser irradiation. When a charge exchanger having the beam collide point existing in straight section, a background beam current of projectile, however, will be increased due to the interaction with the residual gas in the beam duct. Thus, a charge exchanger is devised having the beam collide point in a

Fundamental properties of secondary negative ion emission by sputtering

International Nuclear Information System (INIS)

Shimizu, Toshiki; Tsuji, Hiroshi; Ishikawa, Junzo

1989-01-01

The report describes some results obtained from preliminary experiments on secondary negative ion emission from a cesiated surface by Xe-ion beam sputtering, which give the production probability. A measuring system is constructed for secondary negative ion emission. The system consists of a microwave ion source with a lens, a sputtering target holder with a heater, a cesium oven, a limiting aperture with a substrate for deposition, a negative-ion extractor and lens, and a ExB type mass separator. Observations are made on the dependence of negative ion current on cesium supply, dependence of negative ion current on target temperature, and negative ion production probability. The cesium supply and the target temperature are found to strongly influence the negative ion emission. By controlling these factors, the optimum condition for secondary negative ion emission is achieved with a minimum surface work function. The production probability of the negative ion is found to be very high, about 20% for carbon. Therefore, the secondary negative ion emission is considered a useful and highly efficient method to obtain high current ion beams. The constant in the Rasser's theoretical equation is experimentally determined to be 4.1 x 10 -4 eV sec/m. (N.K.)

Sputtering of water ice

International Nuclear Information System (INIS)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

Electronic sputtering

International Nuclear Information System (INIS)

Johnson, R.E.

1989-01-01

Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

Techniques for beam impedance measurements above cutoff

International Nuclear Information System (INIS)

Lambertson, G.R.; Jacob, A.F.; Rimmer, R.A.; Voelker, F.

1990-08-01

Methods for measuring beam impedance above cutoff have been very limited. For design work on the ALS we have developed two techniques that yield data in the frequency domain with high sensitivity. The first is an extension of the wire method; the second utilizes traveling TM waves to simulate the beam's fields at the wall, and thus avoids the mechanical difficulties of mounting the wire. It is also more sensitive than the other method but the interpretation is complicated by the presence of higher order modes. With either method we were able to detect resonant peaks smaller than 1 Ohm at 10 GHz

Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

2013-01-01

We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

H2 splitting on Pt, Ru and Rh nanoparticles supported on sputtered HOPG

DEFF Research Database (Denmark)

Fiordaliso, Elisabetta Maria; Murphy, Shane; Nielsen, R.M.

2012-01-01

The equilibrium hydrogen exchange rate between adsorbed and gas phase hydrogen at 1bar is measured for Pt, Ru and Rh nanoparticles supported on a sputtered HOPG substrate. The particles are prepared by Electron Beam Physical Vapor Deposition and the diameter of the particles varies between 2 and ...

Identification and roles of nonstoichiometric oxygen in amorphous Ta{sub 2}O{sub 5} thin films deposited by electron beam and sputtering processes

Energy Technology Data Exchange (ETDEWEB)

Mannequin, Cedric, E-mail: MANNEQUIN.Cedricromuald@nims.go.jp [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Tsuruoka, Tohru [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Hasegawa, Tsuyoshi [Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Aono, Masakazu [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2016-11-01

Highlights: • A detail study of the composition and morphology of amorphous tantalum oxide films obtained by electron-beam evaporation and radio-frequency sputtering is carried out. • The mechanisms for moisture absorption by tantalum oxides are proposed. • Deposition-dependent high oxygen stoichiometry of the films is revealed. • Formations of dangling bonds, hydroxyls groups and bidendate water bridges are identified to support the moisture absorption. - Abstract: The morphology and composition of tantalum oxide (Ta{sub 2}O{sub 5}) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta{sub 2}O{sub 5}-EB films was lower than that of the Ta{sub 2}O{sub 5}-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta{sub 2}O{sub 5}-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

A high-intensity plasma-sputter heavy negative ion source

International Nuclear Information System (INIS)

Alton, G.D.; Mori, Y.; Takagi, A.; Ueno, A.; Fukumoto, S.

1989-01-01

A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be addressed for this mode of operation are discussed. 15 refs., 10 figs., 2 tabs

Ultra-low energy Ar+ beam applied for SIMS depth profile analysis of layered nanostructures

International Nuclear Information System (INIS)

Konarski, P.; Mierzejewska, A.; Iwanejko, I.

2001-01-01

Secondary ion mass spectrometry (SIMS) depth profile analyses of flat layered nanostructures: 10 nm Ta 2 O 3 /Ta and 20 nm (10 x B 4 C/Mo)/Si as well as microparticles of core (illite) - shell (rutile) structure, performed with the use of ultra-low energy ion beam (180-880 eV, Ar + ), are presented. The profiles were obtained using 'mesa' scanning technique and also sample rotation. Depth profile resolution below 1 nanometer was obtained for flat nanostructures. Presented experimental results are compared with Monte Carlo sputtering simulations of analysed structures. A method of finding beam energy, optimal for the best resolution SIMS depth profile analysis, is suggested. (author)

Compensation techniques in NIRS proton beam radiotherapy

International Nuclear Information System (INIS)

Akanuma, A.; Majima, H.; Furukawa, S.

1982-01-01

Proton beam has the dose distribution advantage in radiation therapy, although it has little advantage in biological effects. One of the best advantages is its sharp fall off of dose after the peak. With proton beam, therefore, the dose can be given just to cover a target volume and potentially no dose is delivered thereafter in the beam direction. To utilize this advantage, bolus techniques in conjunction with CT scanning are employed in NIRS proton beam radiation therapy planning. A patient receives CT scanning first so that the target volume can be clearly marked and the radiation direction and fixation method can be determined. At the same time bolus dimensions are calculated. The bolus frames are made with dental paraffin sheets according to the dimensions. The paraffin frame is replaced with dental resin. Alginate (a dental impression material with favorable physical density and skin surface contact) is now employed for the bolus material. With fixation device and bolus on, which are constructed individually, the patient receives CT scanning again prior to a proton beam treatment in order to prove the devices are suitable. Alginate has to be poured into the frame right before each treatments. Further investigations are required to find better bolus materials and easier construction methods

Compensation techniques in NIRS proton beam radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Akanuma, A. (Univ. of Tokyo, Japan); Majima, H.; Furukawa, S.

1982-09-01

Proton beam has the dose distribution advantage in radiation therapy, although it has little advantage in biological effects. One of the best advantages is its sharp fall off of dose after the peak. With proton beam, therefore, the dose can be given just to cover a target volume and potentially no dose is delivered thereafter in the beam direction. To utilize this advantage, bolus techniques in conjunction with CT scanning are employed in NIRS proton beam radiation therapy planning. A patient receives CT scanning first so that the target volume can be clearly marked and the radiation direction and fixation method can be determined. At the same time bolus dimensions are calculated. The bolus frames are made with dental paraffin sheets according to the dimensions. The paraffin frame is replaced with dental resin. Alginate (a dental impression material with favorable physical density and skin surface contact) is now employed for the bolus material. With fixation device and bolus on, which are constructed individually, the patient receives CT scanning again prior to a proton beam treatment in order to prove the devices are suitable. Alginate has to be poured into the frame right before each treatments. Further investigations are required to find better bolus materials and easier construction methods.

Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

International Nuclear Information System (INIS)

Brooks, J.N.; Ruzic, D.N.

1990-01-01

The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

International Nuclear Information System (INIS)

Nelson, A.J.; Aharoni, H.

1987-01-01

X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

Implantation, recoil implantation, and sputtering

International Nuclear Information System (INIS)

Kelly, R.

1984-01-01

Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

Magnetically scanned proton therapy beams: rationales and techniques

International Nuclear Information System (INIS)

Jones, D.T.L.; Schreuder, A.N.

2000-01-01

Perhaps the most important advantages of beam scanning systems for proton therapy in comparison with conventional passive beam spreading systems are: (1) Intensity modulation and inverse planning are possible. (2) There is negligible reduction in the range of the beam. (3) Integral dose is reduced as dose conformation to the proximal edge of the lesion is possible. (4) In principle no field-specific modifying devices are required. (5) There is less activation of the surroundings. (6) Scanning systems axe almost infinitely flexible. The main disadvantages include: (1) Scanning systems are more complicated and therefore potentially less reliable and more dangerous. (2) The development of such systems is more demanding in terms of cost, time and manpower. (3) More stable beams are required. (4) Dose and beam position monitoring are more difficult. (5) The problems associated with patient and organ movement axe more severe. There are several techniques which can be used for scanning. For lateral beam spreading, circular scanning (wobbling) or linear scanning can be done. In the latter case the beam can be scanned continuously or in a discrete fashion (spot scanning). Another possibility is to undertake the fastest scan in one dimension (strip scanning) and translate the patient or the scanning magnet in the other dimension. Depth variation is achieved by interposing degraders in the beam (cyclotrons) or by changing the beam energy (synchrotrons). The aim of beam scanning is to deliver a predetermined dose at any point in the body. Special safety precautions must be taken because of the high instantaneous dose rates. The beam position and the dose delivered at each point must be accurately and redundantly determined. (author)

X-ray-ultraviolet beam splitters for the Michelson interferometer

International Nuclear Information System (INIS)

Delmotte, Franck; Ravet, Marie-Francoise; Bridou, Francoise; Varniere, Francoise; Zeitoun, Philippe; Hubert, Sebastien; Vanbostal, Laurent; Soullie, Gerard

2002-01-01

With the aim of realizing a Michelson interferometer working at 13.9 nm, we have developed a symmetrical beam splitter with multilayers deposited on the front and back sides of a silicon nitride membrane. On the basis of the experimental optical properties of the membrane, simulations have been performed to define the multilayer structure that provides the highest reflectivity-transmission product. Optimized Mo-Si multilayers have been successfully deposited on both sides of the membrane by use of the ion-beam sputtering technique, with a thickness-period reproducibility of 0.1 nm. Measurements by means of synchrotron radiation at 13.9 nm and at an angle of 45 deg. provide a reflectivity of 14.2% and a transmission of 15.2% for a 60% s-polarized light, close to the simulated values. Such a beam splitter has been used for x-ray laser Michelson interferometry at 13.9 nm. The first interferogram is discussed

X-ray-ultraviolet beam splitters for the Michelson interferometer.

Science.gov (United States)

Delmotte, Franck; Ravet, Marie-Françoise; Bridou, Françoise; Varnière, Françoise; Zeitoun, Philippe; Hubert, Sébastien; Vanbostal, Laurent; Soullie, Gérard

2002-10-01

With the aim of realizing a Michelson interferometer working at 13.9 nm, we have developed a symmetrical beam splitter with multilayers deposited on the front and back sides of a silicon nitride membrane. On the basis of the experimental optical properties of the membrane, simulations have been performed to define the multilayer structure that provides the highest reflectivity-transmission product. Optimized Mo-Si multilayers have been successfully deposited on both sides of t he membrane by use of the ion-beam sputtering technique, with a thickness-period reproducibility of 0.1 nm. Measurements by means of synchrotron radiation at 13.9 nm and at an angle of 45 degrees provide a reflectivity of 14.2% and a transmission of 15.2% for a 60% s-polarized light, close to the simulated values. Such a beam splitter has been used for x-ray laser Michelson interferometry at 13.9 nm. The first interferogram is discussed.

Substrate dependent hierarchical structures of RF sputtered ZnS films

Science.gov (United States)

Chalana, S. R.; Mahadevan Pillai, V. P.

2018-05-01

RF magnetron sputtering technique was employed to fabricate ZnS nanostructures with special emphasis given to study the effect of substrates (quartz, glass and quartz substrate pre-coated with Au, Ag, Cu and Pt) on the structure, surface evolution and optical properties. Type of substrate has a significant influence on the crystalline phase, film morphology, thickness and surface roughness. The present study elucidates the suitability of quartz substrate for the deposition of stable and highly crystalline ZnS films. We found that the role of metal layer on quartz substrate is substantial in the preparation of hierarchical ZnS structures and these structures are of great importance due to its high specific area and potential applications in various fields. A mechanism for morphological evolution of ZnS structures is also presented based on the roughness of substrates and primary nonlocal effects in sputtering. Furthermore, the findings suggest that a controlled growth of hierarchical ZnS structures may be achieved with an ordinary RF sputtering technique by changing the substrate type.

SiO2-Ta2O5 sputtering yields: simulated and experimental results

International Nuclear Information System (INIS)

Vireton, E.; Ganau, P.; Mackowski, J.M.; Michel, C.; Pinard, L.; Remillieux, A.

1994-09-01

To improve mirrors coating, we have modeled sputtering of binary oxide targets using TRIM code. First, we have proposed a method to calculate TRIM input parameters using on the one hand thermodynamic cycle and on the other hand Malherbe's results. Secondly, an iterative processing has provided for oxide steady targets caused by ionic bombardment. Thirdly, we have exposed a model to get experimental sputtering yields. Fourthly, for (Ar - SiO 2 ) pair, we have determined that steady target is a silica one. A good agreement between simulated and experimental yields versus ion incident angle has been found. For (Ar - Ta 2 O 5 ) pair, we have to introduce preferential sputtering concept to explain discrepancy between simulation and experiment. In this case, steady target is tantalum monoxide. For (Ar - Ta(+O 2 ) pair, tantalum sputtered by argon ions in reactive oxygen atmosphere, we have to take into account new concept of oxidation stimulated by ion beam. We have supposed that tantalum target becomes a Ta 2 O 5 one in reactive oxygen atmosphere. Then, following mechanism is similar to previous pair. We have obtained steady target of tantalum monoxide too. Comparison between simulated and experimental sputtering yields versus ion incident angle has given very good agreement. By simulation, we have found that tantalum monoxide target has at least 15 angstrom thickness. Those results are compatible with Malherbe's and Taglauer's ones. (authors)

Parallel detection, quantification, and depth profiling of peptides with dynamic-secondary ion mass spectrometry (D-SIMS) ionized by C{sub 60}{sup +}-Ar{sup +} co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Chang, Chi-Jen [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Chang, Hsun-Yun; You, Yun-Wen; Liao, Hua-Yang [Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China); Kuo, Yu-Ting; Kao, Wei-Lun; Yen, Guo-Ji; Tsai, Meng-Hung [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Shyue, Jing-Jong, E-mail: shyue@gate.sinica.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China)

2012-03-09

profiling. This co-sputtering technique yielded steadier molecular ion intensities than when using a single C{sub 60}{sup +} beam. In other words, co-sputtering is suitable for the depth profiling of thick specimens. In addition, the smoother surface generated by co-sputtering yielded greater depth resolution than C{sub 60}{sup +} sputtering. Furthermore, because C{sub 60}{sup +} is responsible for generating the molecular ions, the dosage of the auxiliary Ar{sup +} does not significantly affect the quantification curves.

Development of high-polarization Fe/Ge neutron polarizing supermirror: Possibility of fine-tuning of scattering length density in ion beam sputtering

Science.gov (United States)

Maruyama, R.; Yamazaki, D.; Akutsu, K.; Hanashima, T.; Miyata, N.; Aoki, H.; Takeda, M.; Soyama, K.

2018-04-01

The multilayer structure of Fe/Si and Fe/Ge systems fabricated by ion beam sputtering (IBS) was investigated using X-ray and polarized neutron reflectivity measurements and scanning transmission electron microscopy with energy-dispersive X-ray analysis. The obtained result revealed that the incorporation of sputtering gas particles (Ar) in the Ge layer gives rise to a marked reduction in the neutron scattering length density (SLD) and contributes to the SLD contrast between the Fe and Ge layers almost vanishing for spin-down neutrons. Bundesmann et al. (2015) have shown that the implantation of primary Ar ions backscattered at the target is responsible for the incorporation of Ar particles and that the fraction increases with increasing ion incidence angle and increasing polar emission angle. This leads to a possibility of fine-tuning of the SLD for the IBS, which is required to realize a high polarization efficiency of a neutron polarizing supermirror. Fe/Ge polarizing supermirror with m = 5 fabricated under the same condition showed a spin-up reflectivity of 0.70 at the critical momentum transfer. The polarization was higher than 0.985 for the qz range where the correction for the polarization inefficiencies of the beamline works properly. The result of the polarized neutron reflectivity measurement suggests that the "magnetically-dead" layers formed at both sides of the Fe layer, together with the SLD contrast, play a critical role in determining the polarization performance of a polarizing supermirror.

Influence of the atomic structure on the quantum state of sputtered Ir atoms

International Nuclear Information System (INIS)

Bastiaansen, J.; Philipsen, V.; Lievens, P.; Silverans, R.E.; Vandeweert, E.

2004-01-01

The probability of the ejection of a neutral atom in a specific quantum state after keV-ion beam sputtering is often interpreted in terms of the interaction between the atomic states of the escaping atom and the electronic states of the solid. In this work, we examined this interplay in the sputtering of iridium as this element has--unlike the elements employed in previous investigations--a complex atomic structure due to strong configuration interactions. Double-resonant two-photon laser ionization is used to probe the sputtered Ir atoms yielding information about the probability for an ejected atom to populate a specific atomic state and its escape velocity. The qualitative features of the corresponding population partition and state-selective velocity distributions show the influence of the excitation energy and the electronic structure of the different atomic states. A comparison is made between the experimental data and predictions from the resonant electron transfer description

Ion bombardment techniques - recent developments in SIMS

International Nuclear Information System (INIS)

Konarski, P.; Miśnik, M.

2013-01-01

We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

Geometric considerations in magnetron sputtering

International Nuclear Information System (INIS)

Thornton, J.A.

1982-01-01

The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

New diagnostic technique for Zeeman-compensated atomic beam slowing: technique and results

NARCIS (Netherlands)

Molenaar, P.A.; Straten, P. van der; Heideman, H.G.M.; Metcalf, H.

1997-01-01

We have developed a new diagnostic tool for the study of Zeeman-compensated slowing of an alkali atomic beam. Our time-of-flight technique measures the longitudinal veloc- ity distribution of the slowed atoms with a resolution below the Doppler limit of 30 cm/s. Furthermore, it can map

New diagnostic technique for Zeeman-compensated atomic beam slowing: technique and results

OpenAIRE

Molenaar, P.A.; Straten, P. van der; Heideman, H.G.M.; Metcalf, H.

1997-01-01

We have developed a new diagnostic tool for the study of Zeeman-compensated slowing of an alkali atomic beam. Our time-of-flight technique measures the longitudinal veloc- ity distribution of the slowed atoms with a resolution below the Doppler limit of 30 cm/s. Furthermore, it can map the position and velocity distribution of atoms in either ground hyperfine level inside the solenoid without any devices inside the solenoid. The technique reveals the optical pumping ef- fects, and shows in de...

Full three-dimensional simulation of focused ion beam micro/nanofabrication

International Nuclear Information System (INIS)

Kim, Heung-Bae; Hobler, Gerhard; Steiger, Andreas; Lugstein, Alois; Bertagnolli, Emmerich

2007-01-01

2D focused ion beam simulation is only capable of simulating the topography where the surface shape does not change along the third dimension, both in the final result and during processing. In this paper we show that a 3D topography forms under the beam even though the variation in the final result along the third direction is small. We present the code AMADEUS 3D (advanced modelling and design environment for sputter processes), which is capable of simulating the surface topography in 3D space including angle-dependent sputtering and redeposition. The surface is represented by a structured or unstructured grid, and the nodes are moved according to the calculated sputtering and redeposition fluxes. In addition, experiments have been performed on nanodot formation and box milling for a case where a 3D temporary topography forms. The excellent agreement validates the code and shows the completeness of the model

The beam based alignment technique for the measurements of beam position monitors offsets and beam offsets from quadrupoles in the Pohang Light Source

International Nuclear Information System (INIS)

Kim, K.H.; Huang, J.Y.; Ko, I.S.

1999-01-01

The beam based alignment (BBA) technique is applied to the 2-GeV storage ring of the Pohang Light Source to measure the offsets of beam position monitors. This measurement is particularly necessary for beam position monitors (BPMs) plugged into a long (∼10 m) aluminum chamber, since the mechanical deformation of the vacuum chamber is experienced after repeated heating for the outgassing process, and the BPM positions are changed accordingly. A part of the excitation current of each quadrupole magnet is shunted through an electronic shunt circuit. Then, the closed orbit receives a perturbation due to the current reduction. Using two quadrupole magnets, we can measure the offset of each BPM. Also, the BBA technique is applied to measure the beam offsets from the center of quadrupole magnets, and gives information to the survey team about which quadrupole magnets should be aligned mostly. In this process, we introduce the merit function to reduce various errors such as BPM characteristic changes and the lattice imperfection. By minimizing the merit function, we can get the beam offset as the maximized expectation value. This paper presents the BBA technique used and experimental results taken from the 2-GeV Pohang Light Source (PLS) storage ring. When the BPM offset is measured, it is observed that a 3% of the shunt current is suitable. (author)

Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

2016-05-06

Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

Pulsed dc self-sustained magnetron sputtering

International Nuclear Information System (INIS)

Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

2008-01-01

The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

Mechanical properties of micro-sized copper bending beams machined by the focused ion beam technique

International Nuclear Information System (INIS)

Motz, C.; Schoeberl, T.; Pippan, R.

2005-01-01

Micro-sized bending beams with thicknesses, t, from 7.5 down to 1.0 μm were fabricated with the focused ion beam technique from a copper single crystal with an {1 1 1} orientation. The beams were loaded with a nano-indenter and the force vs. displacement curves were recorded. A strong size effect was found where the flow stress reaches almost 1 GPa for the thinnest beams. A common strain gradient plasticity approach was used to explain the size effect. However, the strong t -1.14 dependence of the flow stress could not be explained by this model. Additionally, the combination of two other dislocation mechanisms is discussed: the limitation of available dislocation sources and a dislocation pile-up at the beam centre. The contribution of the pile-up stress to the flow stress gives a t -1 dependence, which is in good agreement with the experimental results

Influence of the surface topography, morphology and structure on magnetic properties of ion beam sputtered iron layers, Fe/Cr/Fe- and Fe/MgO/Fe multilayers; Untersuchung der Morphologie und magnetische Eigenschaften von ionenstrahl-gesputterten Eisen-Einzelschichten, Fe/Cr/Fe- und Fe/MgO/Fe-Schichtsystemen

Energy Technology Data Exchange (ETDEWEB)

Steeb, Alexandra

2007-04-05

In this PhD Thesis, the influence of the surface topography, morphology and structure on magnetic properties of ion beam sputtered iron layers on GaAs is examined. To analyze the structure of the produced iron films, low energy electron diffraction and scanning tunneling microscopy is employed. The utilized methods to investigate the magnetic properties are Kerr- and SQUID-magnetometry and ferromagnetic resonance. It is demonstrated that on untreated as well as on presputtered and heated GaAs substrates the sputtered iron films grow epitaxially. The least surface roughness of 1 A exhibit iron films grown on untreated GaAs, while iron films on heated GaAs have the highest roughness of 30 A. The largest crystal anisotropy constant is found for the presputtered GaAs/Fe-System. For this preparation method, two monolayers of iron are determined to be magnetically dead layers. At a film thickness of 100 A, 83% of the value for saturation magnetization of bulk iron are achieved. The small observed FMR-linewidths confirm the good bulk properties of the ion beam sputtered iron. Furthermore, an antiferromagnetic interlayer exchange coupling in sputtered Fe/Cr/Fe-films was achieved. For a thickness of 12 to 17 A of the chrome interlayer, a coupling strength up to 0.2 mJ/m{sup 2} is found. To account for the small coupling strength, a strong intermixing at the interface is assumed. Finally, epitaxial Fe/MgO/Fe/FeMn multilayers are deposited on GaAs. After the structuring, it is possible to detect tunneling processes in the tunneling contacts with current-voltage measurements. The tunnel magneto resistance values of 2% are small, which can be explained by the absence of sharp, well-defined interfaces between the Fe/FeMn and the Fe/MgO interfaces. These results demonstrate, that analog to MBE the ion beam sputtering method realizes good magnetic bulk properties. However, interface sensitive phenomena are weakened because of a strong intermixing at the interfaces. (orig.)

An analytical simulation technique for cone-beam CT and pinhole SPECT

International Nuclear Information System (INIS)

Zhang Xuezhu; Qi Yujin

2011-01-01

This study was aimed at developing an efficient simulation technique with an ordinary PC. The work involved derivation of mathematical operators, analytic phantom generations, and effective analytical projectors developing for cone-beam CT and pinhole SPECT imaging. The computer simulations based on the analytical projectors were developed by ray-tracing method for cone-beam CT and voxel-driven method for pinhole SPECT of degrading blurring. The 3D Shepp-Logan, Jaszczak and Defrise phantoms were used for simulation evaluations and image reconstructions. The reconstructed phantom images were of good accuracy with the phantoms. The results showed that the analytical simulation technique is an efficient tool for studying cone-beam CT and pinhole SPECT imaging. (authors)

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-12-15

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

International Nuclear Information System (INIS)

Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-01-01

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

International Nuclear Information System (INIS)

Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

2007-01-01

In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

The electrochemical behavior and surface structure of titanium electrodes modified by ion beams

International Nuclear Information System (INIS)

Huang, G.F.; Xie, Z.; Huang, W.Q.; Yang, S.B.; Zhao, L.H.

2004-01-01

Industrial grade titanium modified by ion implantation and sputtering was used as electrodes. The effect of ion beam modification on the electrochemical behavior and surface structure of electrodes was investigated. Also discussed is the hydrogen evolution process of the electrode in acidic solution. Several ions such as Fe + , C + , W + , Ni + and others, were implanted into the electrode. The electrochemical tests were carried out in 1N H 2 SO 4 solution at 30±1 deg. C. The electrode potential was measured versus a saturate calomel electrode as a function of immersion time. The cathodic polarization curves were measured by the stable potential static method. The surface layer composition and the chemical state of the electrodes were also investigated by Auger electron spectrometer (AES) and X-ray photoelectron spectroscopy (XPS) technique. The results show that: (1) the stability of modified electrodes depends on the active elements introduced by ion implantation and sputtering deposition. (2) The hydrogen evolution activity of industrial grade titanium may be improved greatly by ion beam modification. (3) Ion beam modification changed the composition and the surface state of electrodes over a certain depth range and forms an activity layer having catalytic hydrogen evolution, which inhibited the absorption of hydrogen and formation of titanium hydride. Thus promoted hydrogen evolution and improved the hydrogen evolution catalytic activity in industrial grade titanium

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

Science.gov (United States)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

High power impulse magnetron sputtering and its applications

Science.gov (United States)

Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

2018-04-01

High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

Low-temperature growth of (2 1-bar 1-bar 0) ZnO nanofilm on NaCl (0 0 1) surface by ion beam sputtering

International Nuclear Information System (INIS)

Shen, Jung-Hsiung; Yeh, Sung-Wei; Huang, Hsing-Lu; Gan, Dershin

2009-01-01

ZnO nanofilm of the (2 1 -bar 1 -bar 0) surface was prepared by ion beam sputtering deposition. The nanofilm was prepared on NaCl (0 0 1) surface at 200 o C to produce nearly pure (2 1 -bar 1 -bar 0) ZnO texture and the orientation relationship was determined and the interface discussed. Transmission electron microscopy lattice images were used to find the interface formed between ZnO nanocrystals. The ZnO nanocrystals coalesced to form a straight (0 1 -bar 1 -bar 2) interface. The photoluminescence spectrum from the (2 1 -bar 1 -bar 0) ZnO surface showed only a near-band-edge UV emission peak.

Radiation therapy for retinoblastoma: comparison of results with lens-sparing versus lateral beam techniques

International Nuclear Information System (INIS)

McCormick, B.; Ellsworth, R.; Abramson, D.; Haik, B.; Tome, M.; Grabowski, E.; LoSasso, T.

1988-01-01

From 1979 through 1986, 170 children were seen at our institution diagnosed with retinoblastoma. Sixty-six of the children with involvement of 121 eyes, were referred for definitive external beam radiation to one or both eyes. During the study period, two distinct radiation techniques were used. From 1980 through mid-1984, a lens-sparing technique included an anterior electron beam with a contact lens mounted lead shield, combined with a lateral field, was used. Since mid-1984, a modified lateral beam technique has been used, mixing lateral electrons and superior and inferior lateral oblique split beam wedged photons. Doses prescribed were similar for both techniques, ranging from 3,850 to 5,000 cGy in 4 to 5 weeks. The lens-sparing and the modified lateral techniques are compared for local control. For eyes with Group I through III disease, the lens-sparing technique resulted in local control in 33% of the eyes treated, where the modified lateral technique controlled 83% of the eyes treated (p = .006). Mean time to relapse was identical in both groups, that is 24 and 26 months respectively. Most relapses were successfully treated with further local therapy, including laser or cryosurgery, or 60Co plaques. Five eyes required enucleation following initial treatment with the lens-sparing technique, but none thus far with the lateral beam technique. For eyes with Group IV and V disease, no significant differences were found between the two techniques in terms of local control or eventual need for enucleation. With a mean follow-up time of 33 months for the entire group, the 4-year survival is 93%. Two of the 4 deaths are due to second primary tumor, and all 4 have occurred in the lens-sparing group. Because follow-up time is more limited in the lateral beam group, this is not statistically significant and direct survival comparisons are premature

Improved beam-energy calibration technique for heavy ion accelerators

International Nuclear Information System (INIS)

Ferrero, A.M.J.; Garcia, A.; Gil, Salvador

1989-01-01

A simple technique for beam energy calibration of heavy-ion accelerators is presented. A thin hydrogenous target was bombarded with 12 C and 19 F, and the energies of the protons knocked out, elastically were measured at several angles using two detectors placed at equal angles on opposite sides of the beam. The use of these two detectors cancels the largest errors due to uncertainties in the angle and position at which the beam hits the target. An application of this energy calibration method to an electrostatic accelerator is described and the calibration constant of the analyzing magnet was obtained with an estimated error of 0.4 (Author) [es

ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lucas, B.; Rammal, W.; Moliton, A. [Limoges Univ., Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Dept. MINACOM, 87 - Limoges (France)

2006-06-15

Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 Celsius degrees) ITO deposition assisted by an oxygen flow (1 cm{sup 3}/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10{sup -3} {omega}.cm and a surface roughness lower than 1.5 mm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m{sup 2} at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 {mu}m) / ITO(200 nm) / TPD(40 nm) / Alq3(60 nm) / Ca / Al) structure. (authors)

Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Energy Technology Data Exchange (ETDEWEB)

Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-05-07

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

An evaluation testing technique of single event effect using Beam Blanking SEM

Energy Technology Data Exchange (ETDEWEB)

Aoki, J; Hada, T; Pesce, A; Akutsu, T; Matsuda, S [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Igarashi, T; Baba, S

1997-03-01

Beam Blanking SEM (Scanning Electron Microscope) testing technique has been applied to CMOS SRAM devices to evaluate the occurence of soft errors on memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion testing technique, respectively, have been compared. A linear relation between BBSEM current and heavy ion LET has been found. The purpose of this study was to demonstrate that the application of focused pulsed electron beam could be a reliable, convenient and inexpensive tool to investigate the effects of heavy ions and high energy particles on memory devices for space application. (author)

Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

2012-01-01

Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

Sputter deposition of tantalum-nitride films on copper using an rf-plasma

International Nuclear Information System (INIS)

Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

1994-01-01

A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)

International Nuclear Information System (INIS)

Burnett, J.W.; Biersack, J.P.; Gruen, D.M.; Joergensen, B.; Krauss, A.R.; Pellin, M.J.; Schweitzer, E.L.; Yates, J.T. Jr.; Young, C.E.

1987-01-01

The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as Secondary Ion Mass Spectrometry (SIMS) and Surface Analysis by Resonance Ionization of Sputtered Atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of the Sigmund theory and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of less than two monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6 keV Ar + . The sputtered neutrals were non-resonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified Transport of Ions in Matter (TRIM) code. It was found that TRIM C does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the Sigmund theory estimate of >40%. 26 refs., 3 figs., 1 tab

Monte Carlo simulations of secondary electron emission due to ion beam milling

Energy Technology Data Exchange (ETDEWEB)

Mahady, Kyle [Univ. of Tennessee, Knoxville, TN (United States); Tan, Shida [Intel Corp., Santa Clara, CA (United States); Greenzweig, Yuval [Intel Israel Ltd., Haifa (Israel); Livengood, Richard [Intel Corp., Santa Clara, CA (United States); Raveh, Amir [Intel Israel Ltd., Haifa (Israel); Fowlkes, Jason D. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rack, Philip [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-07-01

We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes this study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.

Charge-state related effects in sputtering of LiF by swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Assmann, W. [Ludwig-Maximilians-Universität München, 85748 Garching (Germany); Ban-d' Etat, B. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Bender, M. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Boduch, P. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Grande, P.L. [Univ. Fed. Rio Grande do Sul, BR-91501970 Porto Alegre, RS (Brazil); Lebius, H.; Lelièvre, D. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Marmitt, G.G. [Univ. Fed. Rio Grande do Sul, BR-91501970 Porto Alegre, RS (Brazil); Rothard, H. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Seidl, T.; Severin, D.; Voss, K.-O. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Toulemonde, M., E-mail: toulemonde@ganil.fr [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Trautmann, C. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

2017-02-01

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. The angular distribution of particles sputtered from the surface of LiF single crystals is composed of a jet-like peak superimposed on a broad isotropic distribution. By using incident ions of fixed energy but different charges states, the influence of the electronic energy loss on both components is probed. We find indications that isotropic sputtering originates from near-surface layers, whereas the jet component may be affected by contributions from depth up to about 150 nm.

Minimal interference beam size/profile measurement techniques applicable to the Collider

International Nuclear Information System (INIS)

Nexsen, W.; Dutt, S.; Kauffmann, S.; Lebedev, V.; Maschke, A.; Mokhov, N.; Richardson, R.; Tsyganov, E.; Zinchenko, A.

1993-05-01

The imaging of synchrotron radiation (SR) has been suggested as a technique for providing a continuous, non-interfering monitor of the beam profile in the Collider rings at the Superconducting Super Collider. A closer examination has raised questions concerning the applicability of SR imaging in this case because of the diffraction broadening of the image, the requirements for axial space and location in the lattice, and the complexity of the system. We have surveyed the known, alternative, minimal interference techniques for measuring beam size and have evaluated them for possible Collider usage. We conclude that of the approaches that appear feasible, all require at least some development for our usage and that the development of an electron beam probe offers the best promise. We recommend that flying wires be used for cross-checking and calibrating the electron beam probe diagnostic and for luminosity measurements when the highest accuracy is required, but flying wires should not be used as the primary diagnostic because of their limited lifetime

A beam-based alignment technique for correction of accelerator structure misalignments

International Nuclear Information System (INIS)

Kubo, K.; Raubenheimer, T.O.

1994-08-01

This paper describes a method of reducing the transverse emittance dilution in linear colliders due to transverse wakefields arising-from misaligned accelerator structures. The technique is a generalization of the Wake-Free correction algorithm. The structure alignment errors are measured locally by varying the bunch charge and/or bunch length and measuring the change in the beam trajectory. The misalignments can then be corrected by varying the beam trajectory or moving structures. The results of simulations are presented demonstrating the viability of the technique

Beam-based alignment technique for the SLC [Stanford Linear Collider] linac

International Nuclear Information System (INIS)

Adolphsen, C.E.; Lavine, T.L.; Atwood, W.B.

1989-03-01

Misalignment of quadrupole magnets and beam position monitors (BPMs) in the linac of the SLAC Linear Collider (SLC) cause the electron and positron beams to be steered off-center in the disk-loaded waveguide accelerator structures. Off-center beams produce wakefields which limit the SLC performance at high beam intensities by causing emittance growth. Here, we present a general method for simultaneously determining quadrupole magnet and BPM offsets using beam trajectory measurements. Results from the application of the method to the SLC linac are described. The alignment precision achieved is approximately 100 μm, which is significantly better than that obtained using optical surveying techniques. 2 refs., 4 figs

A technique for aligning sextupole systems using beam optics

International Nuclear Information System (INIS)

Chao, Yu-Chiu.

1992-03-01

A technique for beam based alignment of sextupole system is developed exploiting the enhancement effect of orbit differences by the sextupoles. This technique can in principle be applied to sextupole or sextupole strings with controlled orbit pattern and BPM configurations. This paper will discuss the theoretical basis, special optimization considerations and expected accuracy. Application to the SLC final focus is also discussed

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

Science.gov (United States)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

Semi-empirical formulas for sputtering yield

International Nuclear Information System (INIS)

Yamamura, Yasumichi

1994-01-01

When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

Effects of nitrogen gas ratio on the structural and corrosion properties of ZrN thin films grown on biodegradable magnesium alloy by ion-beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Kiahosseini, Seyed Rahim [Islamic Azad University, Department of Engineering, Damghan Branch, Damghan (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Nuclear Sciences and Technology Institute, Radiation Application Research School, Tehran (Iran, Islamic Republic of)

2017-12-15

Studies on the corrosion resistance of magnesium alloys, which are widely applied as biomaterials, have increased in recent years. In this work, zirconium nitride (ZrN) coatings were deposited on AZ91 magnesium alloy through ion-beam sputtering at 473 K with 0.3, 0.4, 0.5, and 0.6 nitrogen proportions [F(N{sub 2})] in ionized gas. X-ray diffraction, profilometry, hardness tests, scanning electron microscopy, and potentiodynamic polarization techniques were used to analyze the structure, thickness, adhesion, microstructure, and corrosion resistance of coated samples, respectively. Results showed that the (111) crystalline orientation dominated in all coatings. Williamson-Hall technique revealed that the crystallite size of ZrN films decreased from 73 to 20 nm with increasing F(N{sub 2}), and compressive microstrain increased from 0.004 to 0.030. Film thicknesses were inversely correlated with N{sub 2} amount and significantly decreased from 1.7 to 0.8 μm. The maximum dP/dr ratio, a dependent factor of adhesion, was 0.04 kg/cm for the film deposited under the F(N{sub 2}) value of 0.5. The corrosion potential of coated samples was not significantly different from that of uncoated AZ91. Under the F(N{sub 2}) value of 0.6, corrosion current density slightly decreased from 14 to 9.7 μA/cm{sup 2} and significantly increased to 13.5 μA/cm{sup 2}. Results indicated that ZrN film deposited under the F(N{sub 2}) value of 0.5 showed high adhesion and corrosion resistance. (orig.)

Effects of nitrogen gas ratio on the structural and corrosion properties of ZrN thin films grown on biodegradable magnesium alloy by ion-beam sputtering

Science.gov (United States)

Kiahosseini, Seyed Rahim; Mojtahedzadeh Larijani, Majid

2017-12-01

Studies on the corrosion resistance of magnesium alloys, which are widely applied as biomaterials, have increased in recent years. In this work, zirconium nitride (ZrN) coatings were deposited on AZ91 magnesium alloy through ion-beam sputtering at 473 K with 0.3, 0.4, 0.5, and 0.6 nitrogen proportions [F(N2)] in ionized gas. X-ray diffraction, profilometry, hardness tests, scanning electron microscopy, and potentiodynamic polarization techniques were used to analyze the structure, thickness, adhesion, microstructure, and corrosion resistance of coated samples, respectively. Results showed that the (111) crystalline orientation dominated in all coatings. Williamson-Hall technique revealed that the crystallite size of ZrN films decreased from 73 to 20 nm with increasing F(N2), and compressive microstrain increased from 0.004 to 0.030. Film thicknesses were inversely correlated with N2 amount and significantly decreased from 1.7 to 0.8 µm. The maximum d P/d r ratio, a dependent factor of adhesion, was 0.04 kg/cm for the film deposited under the F(N2) value of 0.5. The corrosion potential of coated samples was not significantly different from that of uncoated AZ91. Under the F(N2) value of 0.6, corrosion current density slightly decreased from 14 to 9.7 µA/cm2 and significantly increased to 13.5 µA/cm2. Results indicated that ZrN film deposited under the F(N2) value of 0.5 showed high adhesion and corrosion resistance.

Multi-beam backscatter image data processing techniques employed to EM 1002 system

Digital Repository Service at National Institute of Oceanography (India)

Fernandes, W.A.; Chakraborty, B.

to compensate outer-beam backscatter strength data in such a way that the effect of angular backscatter strength is removed. In this work we have developed backscatter data processing techniques for EM1002 multi-beam system...

Impurity radiation from a beam-plasma neutron source

International Nuclear Information System (INIS)

Molvik, A.W.

1995-01-01

Impurity radiation, in a worst case evaluation for a beam-plasma neutron source (BPNS), does not limit performance. Impurities originate from four sources: (a) sputtering from walls by charge exchange or alpha particle bombardment, (b) sputtering from limiters, (c) plasma desorption of gas from walls and (d) injection with neutral beams. Sources (c) and (d) are negligible; adsorbed gas on the walls of the confinement chamber and the neutral beam sources is removed by the steady state discharge. Source (b) is negligible for impinging ion energies below the sputtering threshold (T i ≤ 0.025 keV on tungsten) and for power densities to the limiter within the capabilities of water cooling (30-40 MW/m 2 ); both conditions can be satisfied in the BPNS. Source (a) radiates 0.025 MW/m 2 to the neutron irradiation samples, compared with 5 to 10 MW/m 2 of neutrons; and radiates a total of 0.08 MW from the plasma column, compared with 60 MW of injected power. The particle bombardment that yields source (a) deposits an average of 2.7 MW/m 2 on the samples, within the capabilities of helium gas cooling (10 MW/m 2 ). An additional worst case for source (d) is evaluated for present day 2 to 5 s pulsed neutral beams with 0.1% impurity density and is benchmarked against 2XIIB. The total radiation would increase a factor of 1.5 to ≤ 0.12 MW, supporting the conclusion that impurities will not have a significant impact on a BPN. (author). 61 refs, 7 figs, 2 tabs

Measurement of the extinction of sputtered TiO/sub 2/ films

Energy Technology Data Exchange (ETDEWEB)

Welsch, E; Lieder, G; Walther, H G; Hacker, E

1982-05-28

In this paper a method for separate measurement of the extinction of optical thin films is presented. The method combines a laser calorimetric technique and a light-scattering goniophotometer. As an example, the spectral extinction properties of r.f. reactively sputtered TiO/sub 2/ films were measured. Under certain conditions absorption indices of 10/sup -5/ or less can be achieved. Thus light scattering, rather than absorption, is the dominant optical loss mechanism in sputtered TiO/sub 2/ films.

Beam shaping optics to enhance performance of interferometry techniques in grating manufacture

Science.gov (United States)

Laskin, Alexander; Laskin, Vadim; Ostrun, Aleksei

2018-02-01

Improving of industrial holographic and interferometry techniques is of great importance in interference lithography, computer-generated holography, holographic data storage, interferometry recording of Bragg gratings as well as gratings of various types in semiconductor industry. Performance of mentioned techniques is essentially enhanced by providing a light beam with flat phase front and flat-top irradiance distribution. Therefore, transformation of Gaussian distribution of a TEM00 laser to flat-top (top hat, uniform) distribution is an important optical task. There are different refractive and diffractive beam shaping approaches used in laser industrial and scientific applications, but only few of them are capable to fulfil the optimum conditions for beam quality demanding holography and interferometry. As a solution it is suggested to apply refractive field mapping beam shaping optics πShaper, which operational principle presumes almost lossless transformation of Gaussian to flat-top beam with flatness of output wavefront, conserving of beam consistency, providing collimated low divergent output beam, high transmittance, extended depth of field, negligible wave aberration, and achromatic design provides capability to work with several lasers with different wavelengths simultaneously. High optical quality of resulting flat-top beam allows applying additional optical components to build various imaging optical systems for variation of beam size and shape to fulfil requirements of a particular application. This paper will describe design basics of refractive beam shapers and optical layouts of their applying in holography and laser interference lithography. Examples of real implementations and experimental results will be presented as well.

The statistics of sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1993-01-01

The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

Arrays of Size-Selected Metal Nanoparticles Formed by Cluster Ion Beam Technique

DEFF Research Database (Denmark)

Ceynowa, F. A.; Chirumamilla, Manohar; Zenin, Volodymyr

2018-01-01

Deposition of size-selected copper and silver nanoparticles (NPs) on polymers using cluster beam technique is studied. It is shown that ratio of particle embedment in the film can be controlled by simple thermal annealing. Combining electron beam lithography, cluster beam deposition, and heat...... with required configurations which can be applied for wave-guiding, resonators, in sensor technologies, and surface enhanced Raman scattering....

Formation and stability of sputtered clusters

International Nuclear Information System (INIS)

Andersen, H.H.

1989-01-01

Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Canto, C.E., E-mail: carloscanto2012@yahoo.com.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Rocha, M.F. [ESIME-Z, IPN, U.P. ALM, Gustavo A. Madero, C.P. 07738 México D.F. (Mexico); Alemón, B. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Huegel, J.C. [Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico)

2016-03-15

The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

International Nuclear Information System (INIS)

Canto, C.E.; Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C.; Rocha, M.F.; Alemón, B.; Flores, M.; Huegel, J.C.

2016-01-01

The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

Properties of tungsten films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

1986-01-01

High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

Investigation of beam transmission in A 9SDH-2 3.0 MV NEC pelletron tandem accelerator

Energy Technology Data Exchange (ETDEWEB)

Deoli, Naresh T.; Kummari, Venkata C.; Pacheco, Jose L.; Duggan, Jerome L.; Glass, Gary A.; McDaniel, Floyd D.; Reinert, Tilo; Rout, Bibhudutta; Weathers, Duncan L. [Ion Beam Modification And Analysis Laboratory, Department of Physics, University of North Texas, Denton, Texas 76203 (United States)

2013-04-19

Electrostatic tandem accelerators are widely used to accelerate ions for experiments in materials science such as high energy ion implantation, materials modification, and analyses. Many applications require high beam current as well as high beam brightness at the target; thus, maximizing the beam transmission through such electrostatic accelerators becomes important. The Ion Beam Modification and Analysis Laboratory (IBMAL) at University of North Texas is equipped with four accelerators, one of which is a 9SDH-2 3.0 MV National Electrostatic Corporation (NEC) Pelletron Registered-Sign tandem accelerator. The tandem accelerator is equipped with three ion sources: one radio frequency-He ion source (Alphatross) and two ion sources of Cs-sputter type, the SNICS II (Source of Negative Ions by Cesium Sputtering) and a Cs-sputter source for trace-element accelerator based mass spectrometry. This work presents a detailed study of the beam transmission of hydrogen, silicon, and silver ions through the accelerator using the SNICS ion source with injection energies ranging from 20 keV to 70 keV. The beam transmission is quantified for three different terminal voltages: 1.5 MV, 2.0 MV and 2.5 MV. For a given terminal voltage, it has been found that beam transmission is strongly dependent on the ion source injector potential. Details of experiments and data analysis are presented.

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Science.gov (United States)

Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

2018-04-01

Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Stress evolution during and after sputter deposition of thin Cu Al alloy films

Science.gov (United States)

Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

2008-06-01

The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Directory of Open Access Journals (Sweden)

T. Ojima

2018-04-01

Full Text Available Real-time in situ reflection high energy electron diffraction (RHEED observations of Fe3O4, γ-Fe2O3, and (Co,Fe3O4 films on MgO(001 substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE and pulsed laser deposition (PLD experiments. This suggests that the layer-by-layer growth of spinel ferrite (001 films is general in most physical vapor deposition (PVD processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Pumping behavior of sputter ion pumps

International Nuclear Information System (INIS)

Chou, T.S.; McCafferty, D.

The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

International Nuclear Information System (INIS)

Fearn, Sarah; Chater, Richard; McPhail, David

2004-01-01

Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

Transport theory of sputtering I: Depth of origin of sputtered atoms

International Nuclear Information System (INIS)

Zhang, Z.L.

1999-01-01

Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Verification and application of beam steering Phased Array UT technique for complex structures

International Nuclear Information System (INIS)

Yamamoto, Setsu; Miura, Takahiro; Semboshi, Jun; Ochiai, Makoto; Mitsuhashi, Tadahiro; Adachi, Hiroyuki; Yamamoto, Satoshi

2013-01-01

Phased Array Ultrasonic Testing (PAUT) techniques for complex geometries are greatly progressing. We developed an immersion PAUT which is suitable for complex surface profiles such as nozzles and deformed welded areas. Furthermore, we have developed a shape adaptive beam steering technique for 3D complex surface structures with conventional array probe and flexible coupling gel which makes the immersion beam forming technique usable under dry conditions. This system consists of 3 steps. Step1 is surface profile measurement which based on 3D Synthesis Aperture Focusing Technique (SAFT), Step2 is delay law calculation which could take into account the measured 3D surface profiles and steer a shape adjusted ultrasonic beam, Step3 is shape adjusted B-scope construction. In this paper, verification results of property of this PAUT system using R60 curved specimen and nozzle shaped specimen which simulated actual BWR structure. (author)

Electron beam instrumentation techniques using coherent radiation

International Nuclear Information System (INIS)

Wang, D.X.

1997-01-01

Much progress has been made on coherent radiation research since coherent synchrotron radiation was first observed in 1989. The use of coherent radiation as a bunch length diagnostic tool has been studied by several groups. In this paper, brief introductions to coherent radiation and far-infrared measurement are given, the progress and status of their beam diagnostic application are reviewed, different techniques are described, and their advantages and limitations are discussed

Development of a new foil compounded from carbon nanotubes and sputter-deposition carbon

International Nuclear Information System (INIS)

Hiroo Hasebe; Hironori Kuboki; Hiroki Okuno; Isao Yamane; Hiroshi Imao; Nobuhisa Fukunishi; Masayuki Kase; Osamu Kamigaito

2014-01-01

New carbon-nanotube-sputter-deposition-carbon (CNT-SDC) foils were developed and used in the U beam time at the RIKEN RI Beam Factory (RIBF) from October to December 2011. The lifetimes of these new foils were drastically extended, and stable, high-intensity U beams were successfully provided to users. The lifetime of the CNT-SDC foils was 2-5 C, which was 100 times longer than those of static C-foils previously used. The qualitative analysis of the CNT-SDC foils clearly showed that the CNT structure and bundles were broken by beam irradiation. In addition, it was found that CNT bundles in the CNT-SDC foil were grown after the carbon deposition procedure. This structure was considered to be the reason that the CNT-SDC foils maintain advantages of both CNT and SDC foils. (author)

InxGa1-xAs obtained from independent target via co-sputtering deposition

International Nuclear Information System (INIS)

Bernal-Correa, R; Torres-Jaramillo, S.; Pulzara-Mora, C.

2017-01-01

This paper is focused on the preparation of InGaAs thin films on GaAs substrates by r.f. magnetron sputtering technique, using the sputtering power as control means for the formation of different stoichiometries. Results of X-ray and Raman spectroscopy allowed corroborating the formation of In x Ga 1-x As in different concentrations, identifying peaks associated with crystallographic planes (X-rays) and characteristic vibrational phonon modes (Raman). An analysis performed with the Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS) techniques, allowed discussing on the composition in each of the layers. Finally, an alternative in obtaining the ternary semiconductor with polycrystalline structure and preferential growth along the direction (111) was demonstrated and generated by a technique different from the epitaxial techniques, which are commonly used for the growth of III-V semiconductors. (paper)

Comparison of some coating techniques to fabricate barrier layers on packaging materials

Energy Technology Data Exchange (ETDEWEB)

Hirvikorpi, Terhi, E-mail: terhi.hirvikorpi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Harlin, Ali, E-mail: ali.harlin@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Karppinen, Maarit, E-mail: maarit.karppinen@tkk.f [Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University School of Science and Technology, Kemistintie 1, P.O. Box 16100, FI-00076 AALTO (Finland)

2010-07-30

Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.

Comparison of some coating techniques to fabricate barrier layers on packaging materials

International Nuclear Information System (INIS)

Hirvikorpi, Terhi; Vaehae-Nissi, Mika; Harlin, Ali; Karppinen, Maarit

2010-01-01

Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.

All-optical optoacoustic microscopy based on probe beam deflection technique

OpenAIRE

Maswadi, Saher M.; Ibey, Bennett L.; Roth, Caleb C.; Tsyboulski, Dmitri A.; Beier, Hope T.; Glickman, Randolph D.; Oraevsky, Alexander A.

2016-01-01

Optoacoustic (OA) microscopy using an all-optical system based on the probe beam deflection technique (PBDT) for detection of laser-induced acoustic signals was investigated as an alternative to conventional piezoelectric transducers. PBDT provides a number of advantages for OA microscopy including (i) efficient coupling of laser excitation energy to the samples being imaged through the probing laser beam, (ii) undistorted coupling of acoustic waves to the detector without the need for separa...

Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

Science.gov (United States)

Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

2012-02-01

In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

Specific power reduction of an ion source due to heating and cathode sputtering of electrodes

International Nuclear Information System (INIS)

Hamilton, G.U.; Semashko, N.N.

The potentialities and limitations of the water-cooled ion-optical system of the ion source designed for continuous operation of the high-power neutral beam injector are determined. The following problems are analyzed: thermal expansion and deformation of electrodes, electrode sputtering as a result of bombardment, and heat transfer to turbulent flow of water

High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

International Nuclear Information System (INIS)

Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

1991-01-01

The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

Measurement of the force on microparticles in a beam of energetic ions and neutral atoms

International Nuclear Information System (INIS)

Trottenberg, Thomas; Schneider, Viktor; Kersten, Holger

2010-01-01

The force on microparticles in an energetic ion beam is investigated experimentally. Hollow glass microspheres are injected into the vertically upward directed beam and their trajectories are recorded with a charge-coupled device camera. The net force on the particles is determined by means of the measured vertical acceleration. The resulting beam pressures are compared with Faraday cup measurements of the ion current density and calorimetric measurements of the beam power density. Due to the neutral gas background, the beam consists, besides the ions, of energetic neutral atoms produced by charge-exchange collisions. It is found that the measured composition of the drag force by an ion and a neutral atom component agrees with a beam model that takes charge-exchange collisions into account. Special attention is paid to the momentum contribution from sputtered atoms, which is shown to be negligible in this experiment, but should become measurable in case of materials with high sputtering yields.

Reactively sputtered TeOx optical recording media

International Nuclear Information System (INIS)

Di Giulio, M.; Manno, D.; Micocci, G.; Rella, R.; Rizzo, A.; Tepore, A.

1987-01-01

Telluriom suboxide (TeO x ) thin films have been obtained by R.F. reactive sputtering deposition by using a Te target and an Ar-O 2 gas mixture. This technique of preparation has been shown to be a valid method because it is possible to easily obtain films with desired characteristics by an appropriate selection of the deposition conditions. Different samples were prepared by changing both the R.F. power (80-300 Watt) and the oxygen concentration in the sputtering gas. The films were analyzed in order to study their optical characteristics and the morphology before and after heat treatment. In particular, transmissivity and reflectivity have been found to change markedly by thermal treatment and critical temperatures in the range 120-150 grades centigrade. This property makes these films suitable for optical recording with a low output power laser diode

Investigation of the depth profile of ion beam induced nanopatterns on Si with simultaneous metal incorporation

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, Behnam; Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Siegen (Germany); Cornejo, Marina; Frost, Frank [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2011-07-01

Ion beam sputtering of semiconductor surfaces can modify the surface and produce a diversity of surface topographies such as periodic ripples or dot structures depended on sputtering parameters. Well ordered nanostructured surfaces have widely technological applications. Recent experiments have shown that the incorporation of metallic impurity atoms during the sputtering process plays a crucial role in pattern formation on the surfaces. These findings offer a new degree of freedom to control pattern formation. In this contribution we report on surface patterning due to Kr ion beam erosion on silicon surfaces with simultaneous Fe and Cr incorporation. We used X-ray reflectivity (XRR) to determine the depth profiles of metal ions as function of ion beam divergence angles and the mean incidence angle of the ions with respect to the surface normal. Depth profiles are correlated with degree of pattern formation determined by AFM. We show that the mean penetration depth and concentration of metal ions depends on the divergence angle of Kr beam provided by Kaufman source which supports the assumption that metal ions are created due to parasitic interaction of the Kr beam with the steel plate lining. The evaluated depth profile by XRR is in good agreement with SIMS and RBS results.

High-power sputtering employed for film deposition

International Nuclear Information System (INIS)

Shapovalov, V I

2017-01-01

The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

TOF technique for laser-driven proton beam diagnostics for the ELIMED beamline

International Nuclear Information System (INIS)

Milluzzo, G.; Scuderi, V.; Amico, A.G.; Cirrone, G.A.P.; Cuttone, G.; Larosa, G.; Leanza, R.; Petringa, G.; Pipek, J.; Romano, F.; Napoli, M. De; Dostal, J.; Margarone, D.; Schillaci, F.; Velyhan, A.

2017-01-01

The Time of Flight (TOF) method for laser-driven ion beam diagnostics has been extensively investigated so far for low energy ion diagnostics and several works, reported in literature [1,2], have shown its efficiency in the measurement of particle beam characteristics such as ion species, energy spectrum and current. Moreover, such technique allows obtaining a shot-to-shot on-line monitoring of optically accelerated particles, necessary to control the reproducibility of the accelerated beam and to deliver a beam suitable for any kind of applications. For this reason, the ELIMED beamline [3,4], which will be entirely developed at INFN-LNS and installed in 2017 within the ion beamline ELIMAIA (ELI Multidisciplinary Applications of laser-Ion Acceleration) experimental hall at ELI-Beamlines in Prague, will be equipped with an on-line diagnostics system composed by silicon carbide and diamond detectors, using the TOF technique. In this contribution, the procedure developed for TOF signal analysis will be briefly reported.

Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

Science.gov (United States)

Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2018-02-01

The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

Sensitivity of ion-induced sputtering to the radial distribution of energy transfers: A molecular dynamics study

International Nuclear Information System (INIS)

Mookerjee, S.; Khan, S. A.; Roy, A.; Beuve, M.; Toulemonde, M.

2008-01-01

Using different models for the deposition of energy on the lattice and a classical molecular dynamics approach to the subsequent transport, we evaluate how the details of the energy deposition model influence sputtering yield from a Lennard-Jones target irradiated with a MeV/u ion beam. Two energy deposition models are considered: a uniform, instantaneous deposition into a cylinder of fixed radius around the projectile ion track, used in earlier molecular dynamics and fluid dynamics simulations of sputtering yields; and an energy deposition distributed in time and space based on the formalism developed in the thermal spike model. The dependence of the sputtering yield on the total energy deposited on the target atoms is very sensitive to the energy deposition model. To clarify the origin of this strong dependence, we explore the role of the radial expansion of the electronic system prior to the transfer of its energy to the lattice. The results imply that observables such as the sputtering yield may be used as signatures of the fast electron-lattice energy transfer in the electronic energy-loss regime, and indicate the need for more experimental and theoretical investigations of these processes

Ion beam profiling from the interaction with a freestanding 2D layer

Directory of Open Access Journals (Sweden)

Ivan Shorubalko

2017-03-01

Full Text Available Recent years have seen a great potential of the focused ion beam (FIB technology for the nanometer-scale patterning of a freestanding two-dimensional (2D layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

Feasibility of arc-discharge and plasma-sputtering methods in cleaning plasma-facing and diagnostics components of fusion reactors

Energy Technology Data Exchange (ETDEWEB)

Hakola, Antti, E-mail: antti.hakola@vtt.fi [VTT Technical Research Centre of Finland, VTT (Finland); Likonen, Jari [VTT Technical Research Centre of Finland, VTT (Finland); Karhunen, Juuso; Korhonen, Juuso T. [Department of Applied Physics, Aalto University (Finland); Aints, Märt; Laan, Matti; Paris, Peeter [Department of Physics, University of Tartu (Estonia); Kolehmainen, Jukka; Koskinen, Mika; Tervakangas, Sanna [DIARC-Technology Oy, Espoo (Finland)

2015-10-15

Highlights: • Feasibility of the arc-discharge and plasma-sputtering techniques in removing deposited layers from ITER-relevant samples demonstrated. • Samples with the size of an A4 paper can be cleaned from 1-μm thick deposited layers in 10–20 minutes by the arc-discharge method. • The plasma-sputtering method is 5–10 times slower but the resulting surfaces are very smooth. • Arc-discharge method could be used for rapid cleaning of plasma-facing components during maintenance shutdowns of ITER, plasma sputtering is preferred for diagnostics mirrors. - Abstract: We have studied the feasibility of arc-discharge and plasma-sputtering methods in removing deposited layers from ITER-relevant test samples. Prototype devices have been designed and constructed for the experiments and the cleaning process is monitored by a spectral detection system. The present version of the arc-discharge device is capable of removing 1-μm thick layers from 350-mm{sup 2} areas in 4–8 s, but due to the increased roughness of the cleaned surfaces and signs of local melting, mirror-like surfaces cannot be treated by this technique. The plasma-sputtering approach, for its part, is some 5–10 times slower in removing the deposited layers but no changes in surface roughness or morphology of the samples could be observed after the cleaning phase. The arc-discharge technique could therefore be used for rapid cleaning of plasma-facing components during maintenance shutdowns of ITER while in the case of diagnostics mirrors plasma sputtering is preferred.

Focused particle beam nano-machining: the next evolution step towards simulation aided process prediction

International Nuclear Information System (INIS)

Plank, Harald

2015-01-01

During the last decade, focused ion beam processing has been developed from traditionally used Ga + liquid ion sources towards higher resolution gas field ion sources (He + and Ne + ). Process simulations not only improve the fundamental understanding of the relevant ion–matter interactions, but also enable a certain predictive power to accelerate advances. The historic ‘gold’ standard in ion–solid simulations is the SRIM/TRIM Monte Carlo package released by Ziegler, Ziegler and Biersack 2010 Nucl. Instrum. Methods B 268 1818–23. While SRIM/TRIM is very useful for a myriad of applications, it is not applicable for the understanding of the nanoscale evolution associated with ion beam nano-machining as the substrate does not evolve with the sputtering process. As a solution for this problem, a new, adapted simulation code is briefly overviewed and finally addresses these contributions. By that, experimentally observed Ne + beam sputter profiles can be explained from a fundamental point of view. Due to their very good agreement, these simulations contain the potential for computer aided optimization towards predictable sputter processes for different nanotechnology applications. With these benefits in mind, the discussed simulation approach represents an enormous step towards a computer based master tool for adaptable ion beam applications in the context of industrial applications. (viewpoint)

Automation of neutral beam source conditioning with artificial intelligence techniques

International Nuclear Information System (INIS)

Johnson, R.R.; Canales, T.W.; Lager, D.L.

1985-01-01

This paper describes a system that automates neutral beam source conditioning. The system achieves this with artificial intelligence techniques. The architecture of the system is presented followed by a description of its performance

Automation of neutral beam source conditioning with artificial intelligence techniques

International Nuclear Information System (INIS)

Johnson, R.R.; Canales, T.; Lager, D.

1986-01-01

This paper describes a system that automates neutral beam source conditioning. The system achieves this with artificial intelligence techniques. The architecture of the system is presented followed by a description of its performance

Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

Directory of Open Access Journals (Sweden)

Bogdanov R.V.

2015-03-01

Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

Sputtering of water ice

DEFF Research Database (Denmark)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

Analysis of the elements sputtered during the lanthanum implantation in stainless steels

International Nuclear Information System (INIS)

Ager, F.J.; Respaldiza, M.A.; Silva, M.F. da; Redondo, L.M.; Soares, J.C.

1998-01-01

The evidence of the modification of the surface structure of the AISI-304 stainless steel during the implantation of lanthanum makes the analysis of the sputtered elements very interesting. Those sputtered elements are deposited on a carbon sheet placed in front of the steel being implanted, and studied by means of RBS and PIXE, together with the implanted specimens. Besides, the protective effect of the implanted ions during the high temperature oxidation is also studied by those techniques together with XRD and thermogravimetric methods. (orig.)

The correlations of electrochromism and thermochromism of tungsten oxide films studied by slow positron beam

International Nuclear Information System (INIS)

Ma Chuangxin; Zhou Chunlan; Zhang Zhiming; Wang Baoyi; Wei Long

2004-01-01

Electrochromic (EC) and thermochromic (TC) tungsten oxide (WO 3 ) films, deposited by magnetron sputtering and vacuum thermal evaporation, were studied systematically by means of slow positron measurements. The S parameters of colored amorphous WO 3 film and crystalline WO 3 film behaved quite similarly in the processes of thermochromism and electrochromism, little influenced by the different deposition methods. It indicates that the coloration processes under various external conditions are correlated with each other. It also shows that the slow positron beam technique may play a particular role in the study of chromogenic materials. (orig.)

Sequential sputtered Co-HfO{sub 2} granular films

Energy Technology Data Exchange (ETDEWEB)

Chadha, M.; Ng, V.

2017-03-15

A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO{sub 2} granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO{sub 2} as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO{sub 2} matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO{sub 2} films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique. - Highlights: • Co-HfO{sub 2} granular films were prepared using sequential sputtering. • A reduction in ferromagnetic-oxide formation is observed. • Co-HfO{sub 2} films display superparamagnetism and tunnelling magneto-resistance. • Varying macroscopic properties were achieved by changing film composition. • Applications can be found in moderate MR sensors and high –frequency RF devices.

The effect of CFRP on retrofitting of damaged HSRC beams using AE technique

Science.gov (United States)

Soffian Noor, M. S.; Noorsuhada, M. N.

2017-12-01

This paper presents the effect of carbon fibre reinforced polymer (CFRP) on retrofitted high strength reinforced concrete (HSRC) beams using acoustic emission (AE) technique. Two RC beam parameters were prepared. The first was the control beam which was undamaged HSRC beam. The second was the damaged HSRC beam retrofitted with CFRP on the soffit. The main objective of this study is to assess the crack modes of HSRC beams using AE signal strength. The relationship between signal strength, load and time were analysed and discussed. The crack pattern observed from the visual observation was also investigated. HSRC beam retrofitted with CFRP produced high signal strength compared to control beam. It demonstrates the effect of the AE signal strength for interpretation and prediction of failure modes that might occur in the beam specimens.

New technique for levitating solid particles using a proton beam

International Nuclear Information System (INIS)

Misconi, N.Y.

1996-01-01

A new technique for levitating solid particles inside a vacuum chamber is developed using a proton beam. This new technique differs from the classical laser-levitation technique invented by Ashkin in that it does not heat up light-absorbing levitated particles to vaporization. This unique property of the method will make it possible to levitate real interplanetary dust particles in a vacuum chamber and study their spin-up dynamics in a ground-based laboratory. It is found that a flux of protons from a proton gun of ∼ 10 15 cm -2 sec -1 is needed to levitate a 10-mm particle. Confinement of the levitated particle can be achieved by a Z or θ pinch to create a gravity well, or by making the beam profile doughnut in shape. In levitating real interplanetary particles, two spin-up mechanisms can be investigated using this technique: one is the Paddack Effect and the other is a spin-up mechanism by the interaction of F-coronal dust with CMEs (Coronal Mass Ejections). The real interplanetary particles were collected by Brownie and associates (also known as the Brownie Particles) from the earth's upper atmosphere. (author)

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

International Nuclear Information System (INIS)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

2005-01-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

Energy Technology Data Exchange (ETDEWEB)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

2005-07-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

MODELLING THE DELAMINATION FAILURE ALONG THE CFRP-CFST BEAM INTERACTION SURFACE USING DIFFERENT FINITE ELEMENT TECHNIQUES

Directory of Open Access Journals (Sweden)

AHMED W. AL-ZAND

2017-01-01

Full Text Available Nonlinear finite element (FE models are prepared to investigate the behaviour of concrete-filled steel tube (CFST beams strengthened by carbon fibre reinforced polymer (CFRP sheets. The beams are strengthened from the bottom side only by varied sheet lengths (full and partial beam lengths and then subjected to ultimate flexural loads. Three surface interaction techniques are used to implement the bonding behaviour between the steel tube and the CFRP sheet, namely, full tie interaction (TI, cohesive element (CE and cohesive behaviour (CB techniques using ABAQUS software. Results of the comparison between the FE analysis and existing experimental study confirm that the FE models with the TI technique could be applicable for beams strengthened by CFRP sheets with a full wrapping length; the technique could not accurately implement the CFRP delamination failure, which occurred for beams with a partial wrapping length. Meanwhile, the FE models with the CE and CB techniques are applicable in the implementation of both CFRP failures (rapture and delamination for both full and partial wrapping lengths, respectively. Where, the ultimate loads' ratios achieved by the FE models using TI, CE and CB techniques about 1.122, 1.047 and 1.045, respectively, comparing to the results of existing experimental tests.

Post-acceleration of sup 7 Be at the Louvain-la-Neuve radioactive ion beam facility

CERN Document Server

Gaelens, M; Loiselet, M; Ryckewaert, G

2003-01-01

The development of an intense and pure post-accelerated sup 7 Be beam at Louvain-la-Neuve will be discussed. Given its properties (metallic nature, long half-life (53 days)) and the special beam parameters required (multi-charge ions, high purity), a range of special techniques had to be investigated. At Louvain-la-Neuve, sup 7 Be is produced by irradiating a lithium target with 30 mu A of 27 MeV protons and is extracted using offline chemical separation techniques. Because of the large amounts of activity required, the chemistry has to be adapted for use in hotcells. The ionization is performed with an Electron Cyclotron Resonance ion source with the sup 7 Be injected in the source by means of sputtering. Special techniques have to be used to prevent the beryllium atoms from being lost on the plasma chamber walls. A dedicated heated plasma chamber for the ion source was developed. The ionization efficiency was increased by studying the chemistry involved in the ion source. The atoms are ionized to the 1+ or ...

Implantation, recoil implantation, and sputtering

International Nuclear Information System (INIS)

Kelly, R.

1984-01-01

The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

Energy Technology Data Exchange (ETDEWEB)

Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

2010-07-01

In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

Sputtered Pd as hydrogen storage for a chip-integrated microenergy system.

Science.gov (United States)

Slavcheva, E; Ganske, G; Schnakenberg, U

2014-01-01

The work presents a research on preparation and physical and electrochemical characterisation of dc magnetron sputtered Pd films envisaged for application as hydrogen storage in a chip-integrated hydrogen microenergy system. The influence of the changes in the sputtering pressure on the surface structure, morphology, and roughness was analysed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AMF). The electrochemical activity towards hydrogen adsorption/desorption and formation of PdH were investigated in 0.5 M H2SO4 using the methods of cyclic voltammetry and galvanostatic polarisation. The changes in the electrical properties of the films as a function of the sputtering pressure and the level of hydrogenation were evaluated before and immediately after the electrochemical charging tests, using a four-probe technique. The research resulted in establishment of optimal sputter regime, ensuring fully reproducible Pd layers with highly developed surface, moderate porosity, and mechanical stability. Selected samples were integrated as hydrogen storage in a newly developed unitized microenergy system and tested in charging (water electrolysis) and discharging (fuel cell) operative mode at ambient conditions demonstrating a stable recycling performance.

Ion beam analysis techniques applied to large scale pollution studies

Energy Technology Data Exchange (ETDEWEB)

Cohen, D D; Bailey, G; Martin, J; Garton, D; Noorman, H; Stelcer, E; Johnson, P [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1994-12-31

Ion Beam Analysis (IBA) techniques are ideally suited to analyse the thousands of filter papers a year that may originate from a large scale aerosol sampling network. They are fast multi-elemental and, for the most part, non-destructive so other analytical methods such as neutron activation and ion chromatography can be performed afterwards. ANSTO in collaboration with the NSW EPA, Pacific Power and the Universities of NSW and Macquarie has established a large area fine aerosol sampling network covering nearly 80,000 square kilometres of NSW with 25 fine particle samplers. This network known as ASP was funded by the Energy Research and Development Corporation (ERDC) and commenced sampling on 1 July 1991. The cyclone sampler at each site has a 2.5 {mu}m particle diameter cut off and runs for 24 hours every Sunday and Wednesday using one Gillman 25mm diameter stretched Teflon filter for each day. These filters are ideal targets for ion beam analysis work. Currently ANSTO receives 300 filters per month from this network for analysis using its accelerator based ion beam techniques on the 3 MV Van de Graaff accelerator. One week a month of accelerator time is dedicated to this analysis. Four simultaneous accelerator based IBA techniques are used at ANSTO, to analyse for the following 24 elements: H, C, N, O, F, Na, Al, Si, P, S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Cu, Ni, Co, Zn, Br and Pb. The IBA techniques were proved invaluable in identifying sources of fine particles and their spatial and seasonal variations accross the large area sampled by the ASP network. 3 figs.

Ion beam analysis techniques applied to large scale pollution studies

Energy Technology Data Exchange (ETDEWEB)

Cohen, D.D.; Bailey, G.; Martin, J.; Garton, D.; Noorman, H.; Stelcer, E.; Johnson, P. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1993-12-31

Ion Beam Analysis (IBA) techniques are ideally suited to analyse the thousands of filter papers a year that may originate from a large scale aerosol sampling network. They are fast multi-elemental and, for the most part, non-destructive so other analytical methods such as neutron activation and ion chromatography can be performed afterwards. ANSTO in collaboration with the NSW EPA, Pacific Power and the Universities of NSW and Macquarie has established a large area fine aerosol sampling network covering nearly 80,000 square kilometres of NSW with 25 fine particle samplers. This network known as ASP was funded by the Energy Research and Development Corporation (ERDC) and commenced sampling on 1 July 1991. The cyclone sampler at each site has a 2.5 {mu}m particle diameter cut off and runs for 24 hours every Sunday and Wednesday using one Gillman 25mm diameter stretched Teflon filter for each day. These filters are ideal targets for ion beam analysis work. Currently ANSTO receives 300 filters per month from this network for analysis using its accelerator based ion beam techniques on the 3 MV Van de Graaff accelerator. One week a month of accelerator time is dedicated to this analysis. Four simultaneous accelerator based IBA techniques are used at ANSTO, to analyse for the following 24 elements: H, C, N, O, F, Na, Al, Si, P, S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Cu, Ni, Co, Zn, Br and Pb. The IBA techniques were proved invaluable in identifying sources of fine particles and their spatial and seasonal variations accross the large area sampled by the ASP network. 3 figs.

A new technique for ion beam tritium labelling

International Nuclear Information System (INIS)

Zhang Nianbao; Sheng Shugang; Yao Fuzeng

1990-06-01

An advanced technique, the ion beam tritium labelling method (IBTL), used for labelling proteins, peptides and other nonvolatile organic compounds is introduced. In this method the excited tritium ion beam is accelerated and then bombs a solid sample target in which tritium exchanging for hydrogen is taken place. The IBTL has been used for preparation of tritiated soybean trypsin inhibitor, ribonuclease A, elastin and pachyman etc. After purifing by dialysis, ion exchange chromatography and gel filtration, the tritiated proteins and polysaccharide were obtained with the specific activity over 37 GBq/mmol, the function of tritiated decomposition products was not found. The product was shown to have native biological activity. Amino acid analysis of tritiated protein showed that the relative specific radioactivities were higher for His., Tyr. and Phe. but lower for Val., Ile. and Ser

Source reconstruction using phase space beam summation technique

International Nuclear Information System (INIS)

Graubart, Gideon.

1990-10-01

In this work, the phase-space beam summation technique (PSBS), is applied to back propagation and inverse source problems. The PSBS expresses the field as a superposition of shifted and tilted beams. This phase space spectrum of beams is matched to the source distribution via an amplitude function which expresses the local spectrum of the source function in terms of a local Fourier transform. In this work, the emphasis is on the phase space processing of the data, on the information content of this data and on the back propagation scheme. More work is still required to combine this back propagation approach in a full, multi experiment inverse scattering scheme. It is shown that the phase space distribution of the data, computed via the local spectrum transform, is localized along lines that define the local arrival direction of the wave data. We explore how the choice of the beam width affects the compactification of this distribution, and derive criteria for choosing a window that optimizes this distribution. It should be emphasized that compact distribution implies fewer beams in the back propagation scheme and therefore higher numerical efficiency and better physical insight. Furthermore it is shown how the local information property of the phase space representation can be used to improve the performance of this simple back propagation problem, in particular with regard to axial resolution; the distance to the source can be determined by back propagating only the large angle phase space beams that focus on the source. The information concerning transverse distribution of the source, on the other hand, is contained in the axial phase space region and can therefore be determined by the corresponding back propagating beams. Because of the global nature of the plane waves propagators the conventional plane wave back propagation scheme does not have the same 'focusing' property, and therefore suffers from lack of information localization and axial resolution. The

Superconductive silicon nanowires using gallium beam lithography.

Energy Technology Data Exchange (ETDEWEB)

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

The Analysis of Distribution of Thickness of ThinFilm Coating During the Magnetron Sputtering on Systems with Planetary Movement of Substrate

Directory of Open Access Journals (Sweden)

H. R. Sagatelyan

2014-01-01

Full Text Available The article subject is a thin-film coating process using ion-plasma sputter deposition systems with magnetron sputtering targets. To improve coating thickness evenness of parts various manufacturers equip their systems with mechanisms for moving the coating parts, and sometimes the magnetrons. More specifically, the article concerns the ion-plasma sputtering process using a system equipped with a mechanism for providing a planetary movement of the coating parts in the plane perpendicular to the planes of two sputtering targets.The purpose of this work was to improve a distribution of the coating thickness evenness on the sputtering surface of the part. It is achieved through selection of the best combinations of kinematic and geometric factors that characterize a particular sputtering operation, depending on the size and position of the surface to be coated. These factors include a ratio between directions and frequencies of the self-rotation of satellite planetary gear, which holds a work piecesubstrate, and the translational motion i.e. planetary carrier rotation to carry the satellite; the angles of planes of the right and left magnetrons with respect to the system frontal plane. Since there is, essentially, a lack of mathematical models to perform the appropriate calculations for the considered type of system designs, a more specific aim of the article is to develop a technique to evaluate the uneven thickness of coatings provided by the systems of this type.To achieve this more specific purpose the analytical technique had been used, applying the postulates of analytical geometry and theoretical mechanics. The main results of the research described in the article are as follows:- mathematical models of dependencies of geometric and kinematic parameters, changing during the sputtering process and characterizing each considered point on the surface of the work piece, on the current position of the work piece in the structure of the planetary

In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

International Nuclear Information System (INIS)

Gao, Y.; Mueller, A.H.; Irene, E.A.; Auciello, O.; Krauss, A.; Schultz, J.A.

1999-01-01

(Ba 0.5 ,Sr 0.5 )TiO 3 (BST) thin films were deposited on MgO, Si, SiO 2 and Ir surfaces by ion beam sputter deposition in oxygen at 700 degree C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5 - 4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO 2 /Si structure were examined by SE and Auger electron spectroscopy depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 degree C. A study of the thermal stability of the Ir/TiN/SiO 2 /Si structure in oxygen at 700 degree C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO 2 /Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes. copyright 1999 American Vacuum Society

Magnetostrictive thin films prepared by RF sputtering

International Nuclear Information System (INIS)

Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

2005-01-01

Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

2014-12-01

The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

International Nuclear Information System (INIS)

Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

2014-01-01

The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

Sputtering and reflection of self-bombardment of tungsten material

International Nuclear Information System (INIS)

Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

2015-01-01

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

Sputtering and reflection of self-bombardment of tungsten material

Energy Technology Data Exchange (ETDEWEB)

Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

2015-04-15

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Qamar, Afzaal, E-mail: afzaalqamar@gmail.com [Department of Physics and Applied Mathematics, PIEAS, Nilore, Islamabad, Punjab 42600 (Pakistan); Mahmood, Arshad [National Institute of Laser and Optronics, Nilore, Islamabad (Pakistan); Sarwar, Tuba; Ahmed, Nadeem [Department of Physics and Applied Mathematics, PIEAS, Nilore, Islamabad, Punjab 42600 (Pakistan)

2011-05-15

Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional {theta}-2{theta} mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si-C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques.

A calculation technique of passing of a powerful relativistic beam through substance

International Nuclear Information System (INIS)

Pobitko, A.I.; Sal'nikov, L.I.; Sukhovitskij, E.Sh.

1995-01-01

The calculation algorithm of passing powerful relativistic beam through substance is developed. Algorithm of calculation is separated on the following problems: 1) a trial charge movement in electromagnetic field of the cylindrical geometry; 2) a computing of own electromagnetic field arising at movement of a particle heavy-current beam in a target; 3) accounting of an interaction of a beam with target atoms; 4) accounting of change of the target properties in a time; 5) geometry and construction of an iterative procedure of calculation. The calculation of passing heavy-current beams of charged particles for transient case is carried out by Monte Carlo method. A conclusion of equations of movement trial charge and technique of calculation own electromagnetic field of the powerful relativistic beam at passing through substance are resulted. 6 refs

New technique of skin embedded wire double-sided laser beam welding

Science.gov (United States)

Han, Bing; Tao, Wang; Chen, Yanbin

2017-06-01

In the aircraft industry, double-sided laser beam welding is an approved method for producing skin-stringer T-joints on aircraft fuselage panels. As for the welding of new generation aluminum-lithium alloys, however, this technique is limited because of high hot cracking susceptibility and strengthening elements' uneven distributions within weld. In the present study, a new technique of skin embedded wire double-sided laser beam welding (LBW) has been developed to fabricate T-joints consisting of 2.0 mm thick 2060-T8/2099-T83 aluminum-lithium alloys using eutectic alloy AA4047 filler wire. Necessary dimension parameters of the novel groove were reasonably designed for achieving crack-free welds. Comparisons were made between the new technique welded T-joint and conventional T-joint mainly on microstructure, hot crack, elements distribution features and mechanical properties within weld. Excellent crack-free microstructure, uniform distribution of silicon and superior tensile properties within weld were found in the new skin embedded wire double-sided LBW T-joints.

Data compilation of angular distributions of sputtered atoms

International Nuclear Information System (INIS)

Yamamura, Yasunori; Takiguchi, Takashi; Tawara, Hiro.

1990-01-01

Sputtering on a surface is generally caused by the collision cascade developed near the surface. The process is in principle the same as that causing radiation damage in the bulk of solids. Sputtering has long been regarded as an undesirable dirty effect which destroys the cathodes and grids in gas discharge tubes or ion sources and contaminates plasma and the surrounding walls. However, sputtering is used today for many applications such as sputter ion sources, mass spectrometers and the deposition of thin films. Plasma contamination and the surface erosion of first walls due to sputtering are still the major problems in fusion research. The angular distribution of the particles sputtered from solid surfaces can possibly provide the detailed information on the collision cascade in the interior of targets. This report presents a compilation of the angular distribution of sputtered atoms at normal incidence and oblique incidence in the various combinations of incident ions and target atoms. The angular distribution of sputtered atoms from monatomic solids at normal incidence and oblique incidence, and the compilation of the data on the angular distribution of sputtered atoms are reported. (K.I.)

Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

International Nuclear Information System (INIS)

Zhang, Lili; Xu, Xue; Wu, Yuejin

2013-01-01

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

RF photo-injector beam energy distribution studies by slicing technique

Science.gov (United States)

Filippetto, D.; Bellaveglia, M.; Musumeci, P.; Ronsivalle, C.

2009-07-01

The SPARC photo-injector is an R&D facility dedicated to the production of high brightness electron beams for radiation generation via FEL or Thomson scattering processes. It is the prototype injector for the recently approved SPARX project, aiming at the construction in the Frascati/University of Rome Tor Vergata area of a new high brightness electron linac for the generation of SASE-FEL radiation in the 1-10 nm wavelength range. The first phase of the SPARC project has been dedicated to the e-beam source characterization; the beam transverse and longitudinal parameters at the exit of the gun have been measured, and the photo-injector settings optimized to achieve best performance. Several beam dynamics topics have been experimentally studied in this first phase of operation, as, for example, the effect of photocathode driver laser beam shaping and the evolution of the beam transverse emittance. These studies have been made possible by the use of a novel diagnostic tool, the " emittance-meter" which enables the measurement of the transverse beam parameters at different positions along the propagation axis in the very interesting region at the exit of the RF gun. The new idea of extending the e-meter capabilities came out more recently. Information on the beam longitudinal phase space and correlations with the transverse planes can be retrieved by the slicing technique. In this paper, we illustrate the basic concept of the measurement together with simulations that theoretically validate the methodology. Some preliminary results are discussed and explained with the aid of code simulations.

Proposal to negotiate a collaboration agreement related to the application of novel cavity fabrication techniques and Nb/Cu sputter coating technology in the field of superconducting RF for the Future Circular Collider (FCC) study

CERN Document Server

2015-01-01

Proposal to negotiate a collaboration agreement related to the application of novel cavity fabrication techniques and Nb/Cu sputter coating technology in the field of superconducting RF for the Future Circular Collider (FCC) study

Chemical sputtering of graphite by H+ ions

International Nuclear Information System (INIS)

Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

1976-01-01

In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

Properties of IGZO thin films irradiated by electron beams with various energies

International Nuclear Information System (INIS)

Jeong, So Hyun; Bae, Byung Seong; Yu, Kyeong Min; Yun, Eui Jung; Ryu, Min Ki; Cho, Kyoung Ik

2012-01-01

In this study, we investigated the effects of the key parameters of high-energy electron-beam irradiation (HEEBI) on the optical, electrical, and structural properties of indium-gallium-zinc oxide (IGZO) films grown on glass substrates at room temperature by using radio-frequency magnetron sputtering techniques. Hall, photoluminescence, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy measurements revealed that p-type conductivity might appear in films HEEBI-treated at high energy and dose, which was attributed to not only the formation of oxygen interstitial and zinc vacancy acceptor defects but also the reduction of hydrogen-related donor defects in the IGZO films due to HEEBI treatment. X-ray diffraction analyses showed an increase in the halo peak intensity at around 34 .deg. with increasing electron-beam energy, indicating that all films prepared in this study were more crystallized at a higher energy despite their amorphous main structure.

Phase aberrations and beam cleanup techniques in carbon-dioxide laser fusion systems

International Nuclear Information System (INIS)

Viswanathan, V.K.

1981-01-01

This paper describes the various carbon dioxide laser fusion systems at Los Alamos from the point of view of an optical designer. The types of phase aberrations present in these systems, as well as the beam cleanup techniques that can be used to improve the beam optical quality, are discussed. As this is a review article, some previously published results are also used where relevant

Computer simulation of sputtering: A review

International Nuclear Information System (INIS)

Robinson, M.T.; Hou, M.

1992-08-01

In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

Beam profile measurements on the advanced test accelerator using optical techniques

International Nuclear Information System (INIS)

Chong, Y.P.; Kalibjian, R.; Cornish, J.P.; Kallman, J.S.; Donnelly, D.

1986-01-01

Beam current density profiles of ATA have been measured both spatially and temporally using a number of diagnostics. An extremely important technique involves measuring optical emissions from either a target foil inserted into the beam path or gas atoms and molecules excited by beam electrons. This paper describes the detection of the optical emission. A 2-D gated television camera with a single or dual micro-channel-plate (MCP) detector for high gain provides excellent spatial and temporal resolution. Measurements are routinely made with resolutions of 1 mm and 5 ns respectively. The optical line of sight allows splitting part of the signal to a streak camera or photometer for even higher time resolution

Heavy particle transport in sputtering systems

Science.gov (United States)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Sputtering on cobalt with noble gas ions

International Nuclear Information System (INIS)

Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

1983-01-01

Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

Laser micromachining of sputtered DLC films

International Nuclear Information System (INIS)

Fu, Y.Q.; Luo, J.K.; Flewitt, A.J.; Ong, S.E.; Zhang, S.; Milne, W.I.

2006-01-01

DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp 2 /sp 3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF 6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

Science.gov (United States)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

Science.gov (United States)

Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

2017-02-01

Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

Electrical resistivity of sputtered molybdenum films

International Nuclear Information System (INIS)

Nagano, J.

1980-01-01

The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

Science.gov (United States)

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, X.L.; Coetsee, E. [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063, Guangdong (China); Swart, H.C., E-mail: swartHC@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Terblans, J.J., E-mail: terblansjj@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa)

2017-07-31

Highlights: • Linear Least Square (LLS) method used to separate Ni and Cu Auger spectra. • The depth-dependent ion sputtering induced roughness was quantitatively evaluated. • The depth resolution better when profiling with dual-ion beam vs. a single-ion beam. • AES depth profiling with a lower ion energy results in a better depth resolution. - Abstract: The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO{sub 2} substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar{sup +} ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

Dosimetric evaluations and comparisons between different techniques (Fan beam, Cone beam, OPT) in the dental industry and not

International Nuclear Information System (INIS)

Rampado, O.

2014-01-01

In recent years there has been an impressive evolution and spread of cone beam tomographic equipment, in particular in the dental and maxillofacial surgery. These devices exhibit unique characteristics both from the point of view of the geometric parameters of exposure than the quality of the beams radiating employed. In parallel to this technological development it was dealt with the quantification of the dose to the patient, with a discussion between experts to define what are the variables most appropriate to use and the appropriate ways of measuring. And it is of interest also the discussion on the comparison of the risks associated with the use of this method as an alternative to traditional techniques or other tomographic techniques, both on the criteria of optimization in the realization of the tests.

Ion-assisted sputter deposition of molybdenum--silicon multilayers

International Nuclear Information System (INIS)

Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

1993-01-01

X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

Energy Technology Data Exchange (ETDEWEB)

Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

2014-09-01

Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

Physical sputtering of metallic systems by charged-particle impact

International Nuclear Information System (INIS)

Lam, N.Q.

1989-12-01

The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

Energy Technology Data Exchange (ETDEWEB)

Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

2015-11-15

Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

Moving strip technique of electron beam therapy

Energy Technology Data Exchange (ETDEWEB)

Matsushima, Kishio; Wakasa, Hiroyuki; Oguri, Nobuhiro; Kitayama, Takuichi; Nakagiri, Yoshitada; Mikami, Yasutaka; Hashimoto, Keiji; Hiraki, Yoshio; Aono, Kaname

1984-12-01

The fieldsize in electron beam therapy is determined by the cone size. In case of skin metastasis of a malignant tumor and so on, which need a large field size and whose area is much larger than the size of the cone, a large field size is usually produced by dividing the portals. However, the dose distribution at the border of the field becomes unequal, and hot and cold dose areas are produced according to the distance between portals. We tried the strip field technique in a large field along the long axis of the body in order to flatten the dose of the border employing the moving strip used for whole abdominal irradiation in ovarian cancer. We set the film in Mix-DP and used the strip field technique with 2.5cm steps. We discussed the relationship between the interval (distance between portals) and the flattening of the dose within the field. Skin movement due to breathing and influences on the flattening of the dose were considered. The proper flatness was obtained at depths of 0,1,2, and 3cm by setting the interval at 0.5cm. When skin movement was produced by breathing in +-1.5mm, the proper flaness was obtained also at a 0.5-cm interval. It seems that smoothing is increased by breathing. An ''electron beam moving strip'' with a 2.5-cm step and 0.5-cm interval was clinically effective in the treatment of patients with skin metastasis of colon cancer. (author).

One-dimensional analysis of the rate of plasma-assisted sputter deposition

International Nuclear Information System (INIS)

Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

2007-01-01

In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

O2-enhanced methanol oxidation reaction at novel Pt-Ru-C co-sputtered electrodes

International Nuclear Information System (INIS)

Umeda, Minoru; Matsumoto, Yosuke; Inoue, Mitsuhiro; Shironita, Sayoko

2013-01-01

Highlights: ► Novel Pt-Ru-C electrodes were prepared by a co-sputtering technique. ► Co-sputtered electrodes with C result in highly efficient O 2 -enhanced methanol oxidation. ► Pt–Ru-alloy-based co-sputtered electrode induces a negative onset potential of methanol oxidation. ► The Pt-Ru-C electrodes allow a negative onset potential of O 2 -enhanced methanol oxidation. ► The optimum atomic ratios of Pt-Ru-C are Pt: 0.24–0.80, Ru: 0.14–0.61, C: 0.06–0.37. -- Abstract: A Pt-Ru-C electrode has been developed using a co-sputtering technique for use as the anode catalyst of a mixed-reactant fuel cell. The physical and electrochemical characteristics of the electrodes demonstrate that co-sputtered Pt and Ru form a Pt–Ru alloy. The crystallite sizes of the catalysts investigated in this study are reduced by the addition of C to the Pt–Ru alloy. Cu stripping voltammograms suggest that the sputtering of C and the formation of the Pt–Ru alloy synergically increase the electrochemical surface area of the electrodes. The methanol oxidation performances of the prepared electrodes were evaluated in N 2 and O 2 atmospheres; the Pt-Ru-C electrodes achieve an O 2 -induced negative shift in the onset potential of the methanol oxidation (E onset ) and enhance the methanol oxidation current density in the O 2 atmosphere. The mechanism of O 2 -enhanced methanol oxidation with a negative E onset at the Pt-Ru-C electrodes is attributed to a change in the electronic structure of Pt due to the formation of Pt–Ru alloy and the generation of O-based adsorption species by the reduction of O 2 . Finally, the composition of the Pt-Ru-C electrode for the O 2 -enhanced methanol oxidation with a negative E onset was found to be optimal at an atomic ratio of Pt: 0.24–0.80, Ru: 0.14–0.61, and C: 0.06–0.37

Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

2012-07-01

In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

Beam synchronous detection techniques for X-Ray spectroscopy

International Nuclear Information System (INIS)

Goujon, Gérard; Rogalev, Andreï; Goulon, José; Feite, Serge; Wilhelm, Fabrice

2013-01-01

The Photo diode detectors combine a set of properties that make them most appropriate, in particular, for X-ray Magnetic Circular Dichroism (XMCD) experiments. Under standard operating conditions, the detection bandwidth is primarily limited by the transimpedance preamplifier that converts the very low ac photocurrent into a voltage. On the other hand, when the photodiode is reverse biased, its finite shunt resistance will cause an undesirable, temperature dependent DC dark current. The best strategy to get rid of it is to use synchronous detection techniques. A classical implementation is based on the use of a chopper modulating the X-ray beam intensity at rather low frequencies (typically below 1 kHz). Here we report on the recent development of a fast Xray detection which has the capability to fully exploit the frequency structure of the ESRF X-ray beam (355 KHz and its harmonics). The availability of new wide band preamplifiers allowed us to extend the working frequency range up to a few MHz. A beam synchronous data processing was implemented in large FPGAs. Performances of the new detection system implemented at the ESRF beamline ID12 are illustrated with detection of the Fe K-edge XMCD spectra in garnets, using 4 bunches operation mode with modulation frequency of 1.4 MHz.

Sputtering properties of tungsten 'fuzzy' surfaces

International Nuclear Information System (INIS)

Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

2011-01-01

Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

Thin films preparation of the Ti-Al-O system by rf-sputtering

International Nuclear Information System (INIS)

Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J.; Manaud, J. P.; Lahaye, M.; Munoz S, J.

2010-01-01

In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti 3 Al targets in a sputtering chamber with an Ar-O 2 atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

Depth profile investigation of the incorporated iron atoms during Kr{sup +} ion beam sputtering on Si (001)

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Arezki, B.; Biermanns, A. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Cornejo, M.; Hirsch, D. [Leibniz-Institut für Oberflächenmodifizierung e. V. (IOM), Permoserstraße 15, D-04318 Leipzig (Germany); Lützenkirchen-Hecht, D. [Abteilung Physik, Bergische Universität Wuppertal, D-42097 Wuppertal (Germany); Frost, F. [Leibniz-Institut für Oberflächenmodifizierung e. V. (IOM), Permoserstraße 15, D-04318 Leipzig (Germany); Pietsch, U. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany)

2013-01-01

We investigate the incorporation of iron atoms during nano-patterning of Si surfaces induced by 2 keV Kr{sup +} ion beam erosion under an off-normal incidence angle of 15°. Considering the low penetration depth of the ions, we have used X-ray reflectivity (XRR) and X-ray absorption near edge spectroscopy (XANES) under grazing-incidence angles in order to determine the depth profile and phase composition of the incorporated iron atoms in the near surface region, complemented by secondary ion mass spectrometry and atomic force microscopy. XRR analysis shows the accumulation of metallic atoms within a near surface layer of a few nanometer thickness. We verify that surface pattern formation takes place only when the co-sputtered Fe concentration exceeds a certain limit. For high Fe concentration, the ripple formation is accompanied by the enhancement of Fe close to the surface, whereas no Fe enhancement is found for low Fe concentration at samples with smooth surfaces. Modeling of the measured XANES spectra reveals the appearance of different silicide phases with decreasing Fe content from the top towards the volume. - Highlights: ► We investigate the incorporation of iron atoms during nano-patterning of Si surfaces. ► Pattern formation occurs when the areal density of Fe exceeds a certain threshold. ► X-ray reflectivity shows a layering at near surface due to incorporated Fe atoms. ► It is shown that the patterning is accompanied with the appearance of Fe-rich silicide.

Ion beam induced effects on the ferromagnetism in Pd nanoparticles

International Nuclear Information System (INIS)

Kulriya, P. K.; Mehta, B. R.; Agarwal, D. C.; Agarwal, Kanika; Kumar, Praveen; Shivaprasad, S. M.; Avasthi, D. K.

2012-01-01

Present study demonstrates the role of metal-insulator interface and ion irradiation induced defects on the ferromagnetic properties of the non-magnetic materials. Magnetic properties of the Pd nanoparticles(NPs) embedded in the a-silica matrix synthesized using atom beam sputtering technique, were determined using SQUID magnetometry measurements which showed that ferromagnetic response of Pd increased by 3.5 times on swift heavy ion(SHI) irradiation. The ferromagnetic behavior of the as-deposited Pd NPs is due to strain induced by the surrounding matrix and modification in the electronic structure at the Pd-silica interface as revealed by insitu XRD and XPS investigations, respectively. The defects created by the SHI bombardment are responsible for enhancement of the magnetization in the Pd NPs.

Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

Science.gov (United States)

Chen, Feng

2009-10-01

A range of ion beam techniques have been used to fabricate a variety of photonic guiding structures in the well-known lithium niobate (LiNbO3 or LN) crystals that are of great importance in integrated photonics/optics. This paper reviews the up-to-date research progress of ion-beam-processed LiNbO3 photonic structures and reports on their fabrication, characterization, and applications. Ion beams are being used with this material in a wide range of techniques, as exemplified by the following examples. Ion beam milling/etching can remove the selected surface regions of LiNbO3 crystals via the sputtering effects. Ion implantation and swift ion irradiation can form optical waveguide structures by modifying the surface refractive indices of the LiNbO3 wafers. Crystal ion slicing has been used to obtain bulk-quality LiNbO3 single-crystalline thin films or membranes by exfoliating the implanted layer from the original substrate. Focused ion beams can either generate small structures of micron or submicron dimensions, to realize photonic bandgap crystals in LiNbO3, or directly write surface waveguides or other guiding devices in the crystal. Ion beam-enhanced etching has been extensively applied for micro- or nanostructuring of LiNbO3 surfaces. Methods developed to fabricate a range of photonic guiding structures in LiNbO3 are introduced. Modifications of LiNbO3 through the use of various energetic ion beams, including changes in refractive index and properties related to the photonic guiding structures as well as to the materials (i.e., electro-optic, nonlinear optic, luminescent, and photorefractive features), are overviewed in detail. The application of these LiNbO3 photonic guiding structures in both micro- and nanophotonics are briefly summarized.

The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

2015-05-01

Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

Science.gov (United States)

Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

2009-01-01

CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

International Nuclear Information System (INIS)

Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

2008-01-01

Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

Transport theory of sputtering I: Depth of origin of sputtered atoms

International Nuclear Information System (INIS)

Zhang, Zhu Lin

1999-01-01

Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error m≥0. The former even may be only about one half of the latter as long as m=0

Implementation of intra-cavity beam shaping technique to enhance pump efficiency

CSIR Research Space (South Africa)

Litvin, IA

2012-02-01

Full Text Available In this work the author proposes an implementation of a new intra-cavity beam shaping technique to vary the intensity distribution of the fundamental mode in a resonator cavity while maintaining a constant intensity distribution at the output...

On the topography of sputtered or chemically etched crystals: surface energies minimised

International Nuclear Information System (INIS)

Chadderton, L.T.; Cope, J.O.

1984-01-01

The sputtering of single or polycrystalline metal surfaces by heavy ions gives rise to the characteristic topographical features of etch pits, ripples, and cones (pyramids). For cones and pyramids, in particular, no completely satisfactory explanation exists as to the origin of the basic geometry. Scanning electron micrographs are shown. It is proposed that for topographical features of both chemical etch and ion beam origin on single crystal surfaces, the presence of facets on cones and pyramids in particular, is due to the minimization of surface energy. (U.K.)

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

A new crossed molecular beam apparatus using time-sliced ion velocity imaging technique

International Nuclear Information System (INIS)

Wu Guorong; Zhang Weiqing; Pan Huilin; Shuai Quan; Jiang Bo; Dai Dongxu; Yang Xueming

2008-01-01

A new crossed molecular beam apparatus has been constructed for investigating polyatomic chemical reactions using the time-sliced ion velocity map imaging technique. A unique design is adopted for one of the two beam sources and allows us to set up the molecular beam source either horizontally or vertically. This can be conveniently used to produce versatile atomic or radical beams from photodissociation and as well as electric discharge. Intensive H-atom beam source with high speed ratio was produced by photodissociation of the HI molecule and was reacted with the CD 4 molecule. Vibrational-state resolved HD product distribution was measured by detecting the CD 3 product. Preliminary results were also reported on the F+SiH 4 reaction using the discharged F atom beam. These results demonstrate that this new instrument is a powerful tool for investigating chemical dynamics of polyatomic reactions.

MD simulation of cluster formation during sputtering

International Nuclear Information System (INIS)

Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

2001-01-01

The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

Improvement of the Correlative AFM and ToF-SIMS Approach Using an Empirical Sputter Model for 3D Chemical Characterization.

Science.gov (United States)

Terlier, T; Lee, J; Lee, K; Lee, Y

2018-02-06

Technological progress has spurred the development of increasingly sophisticated analytical devices. The full characterization of structures in terms of sample volume and composition is now highly complex. Here, a highly improved solution for 3D characterization of samples, based on an advanced method for 3D data correction, is proposed. Traditionally, secondary ion mass spectrometry (SIMS) provides the chemical distribution of sample surfaces. Combining successive sputtering with 2D surface projections enables a 3D volume rendering to be generated. However, surface topography can distort the volume rendering by necessitating the projection of a nonflat surface onto a planar image. Moreover, the sputtering is highly dependent on the probed material. Local variation of composition affects the sputter yield and the beam-induced roughness, which in turn alters the 3D render. To circumvent these drawbacks, the correlation of atomic force microscopy (AFM) with SIMS has been proposed in previous studies as a solution for the 3D chemical characterization. To extend the applicability of this approach, we have developed a methodology using AFM-time-of-flight (ToF)-SIMS combined with an empirical sputter model, "dynamic-model-based volume correction", to universally correct 3D structures. First, the simulation of 3D structures highlighted the great advantages of this new approach compared with classical methods. Then, we explored the applicability of this new correction to two types of samples, a patterned metallic multilayer and a diblock copolymer film presenting surface asperities. In both cases, the dynamic-model-based volume correction produced an accurate 3D reconstruction of the sample volume and composition. The combination of AFM-SIMS with the dynamic-model-based volume correction improves the understanding of the surface characteristics. Beyond the useful 3D chemical information provided by dynamic-model-based volume correction, the approach permits us to enhance

Experimental and analytical study of the sputtering phenomena

International Nuclear Information System (INIS)

Howard, P.A.

1976-03-01

One form of the sputtering phenomena, the heat-transfer process that occurs when an initially hot vertical surface is cooled by a falling liquid film, was examined from a new experimental approach. The sputtering front is the lowest wetted position on the vertical surface and is characterized by a short region of intense nucleate boiling. The sputtering front progresses downward at nearly a constant rate, the surface below the sputtering front being dry and almost adiabatic. This heat-transfer process is of interest in the analysis of some of the performance aspects of emergency core-cooling systems of light-water reactors. An experimental apparatus was constructed to examine the heat-transfer characteristics of a sputtering front. In the present study, a heat source of sufficient intensity was located immediately below the sputtering front, which prevented its downward progress, thus permitting detailed measurements of steady-state surface temperatures throughout a sputtering front. Experimental evidence showed the sputtering front to correspond to a critical heat-flux (CHF) phenomenon. Data were obtained with water flow rates of 350-1600 lb/sub m//hr-ft and subcoolings of 40-140 0 F on a 3 / 8 -in. solid copper rod at 1 atm. A two-dimensional analytical model was developed to describe a stationary sputtering front where the wet-dry interface corresponds to a CHF phenomena and the dry zone is adiabatic. This model is nonlinear because of the temperature dependence of the heat-transfer coefficient in the wetted region and has yielded good agreement with data. A simplified one-dimensional approximation was developed which adequately describes these data. Finally, by means of a coordinate transformation and additional simplifying assumptions, this analysis was extended to analyze moving sputtering fronts, and reasonably good agreement with reported data was shown

Measurements of beryllium sputtering yields at JET

Science.gov (United States)

Jet-Efda Contributors Stamp, M. F.; Krieger, K.; Brezinsek, S.

2011-08-01

The lifetime of the beryllium first wall in ITER will depend on erosion and redeposition processes. The physical sputtering yields for beryllium (both deuterium on beryllium (Be) and Be on Be) are of crucial importance since they drive the erosion process. Literature values of experimental sputtering yields show an order of magnitude variation so predictive modelling of ITER wall lifetimes has large uncertainty. We have reviewed the old beryllium yield experiments on JET and used current beryllium atomic data to produce revised beryllium sputtering yields. These experimental measurements have been compared with a simple physical sputtering model based on TRIM.SP beryllium yield data. Fair agreement is seen for beryllium yields from a clean beryllium limiter. However the yield on a beryllium divertor tile (with C/Be co-deposits) shows poor agreement at low electron temperatures indicating that the effect of the higher sputtering threshold for beryllium carbide is important.

The application of Lie algebra techniques to beam transport design

International Nuclear Information System (INIS)

Irwin, J.

1990-01-01

Using a final focus system for high-energy linear colliders as an example of a beam transport system, we illustrate for each element, and for the interplay of elements, the connection of Lie algebra techniques with usual optical analysis methods. Our analysis describes, through fourth order, the calculation and compensation of all important aberrations. (orig.)

Co-sputtered optical films

Energy Technology Data Exchange (ETDEWEB)

Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

1977-06-01

The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

Preparation and Characterization of FC Films Coated on PET Substrates by RF Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Huang Mei-lin

2018-01-01

Full Text Available Fluorocarbon (FC films were prepared on polyethylene terephthalate (PET plates and PET fabrics respectively by a radiofrequency (RF magnetron sputtering technique using polytetrafluoroethylene (PTFE as a target. Scanning electron microscope and X-ray photoelectron spectroscopy were used to investigate the morphology, structure and composition of the obtained FC films. The hydrophobicity and uvioresistant properties of the FC film coated fabric were studied. The results show that the FC films were successfully deposited on the PET substrates by a RF magnetron sputtering. The deposited films are made up of four components -CF3, -CF2-, CF- and -C-. The proportions of the four components and surface morphologies of the deposited films vary with the sputtering conditions. Compared with the original fabric samples, the hydrophobicity of the FC film coated fabrics is quite good and improved significantly.

Techniques to sort Bessel beams

CSIR Research Space (South Africa)

Dudley, Angela L

2013-09-01

Full Text Available -polar coordinate transformation, translating helically phased beams into a transverse phase gradient. By introducing two cylindrical lenses we can focus each of the azimuthal modes associated with each Bessel beam to a different lateral position in the Fourier...

Construction of a sputtering reactor for the coating and processing of monolithic U-Mo nuclear fuel

International Nuclear Information System (INIS)

Schmid, Wolfgang

2011-01-01

In the presented thesis sputter deposition was used for the first time to coat monolithic U-Mo nuclear fuel foils with diffusion inhibitive materials. The intention of these coatings is to prevent the formation of an interdiffusion layer between U-Mo and Al cladding during the use of the fuel. A small sputtering reactor was built, in which the method was tested and processing parameters were investigated. In parallel a larger sputtering reactor was constructed, that allows to coat full size monolithic U-Mo nuclear fuel foils and was used to test an industrial application of the technique. As a result a method based on sputter deposition and erosion can be presented, that allows to clean as well as to coat the surface of monolithic U-Mo nuclear fuel foils in excellent quality. It can be included at any time into the manufacturing chain for U-Mo fuel elements, which is currently being developed.

Neutral atom beam technique enhances bioactivity of PEEK

International Nuclear Information System (INIS)

Khoury, Joseph; Kirkpatrick, Sean R.; Maxwell, Melissa; Cherian, Raymond E.; Kirkpatrick, Allen; Svrluga, Richard C.

2013-01-01

Polyetheretherketone (PEEK) is currently gaining popularity in orthopedic and spinal applications but has potential drawbacks in use. PEEK is biocompatible, similar in elasticity to bone, and radiolucent; however, it has been shown to be inert and does not integrate well with bone. Recent efforts have focused on increasing the bioactivity of PEEK by modifying the surface to improve the bone-implant interface. We have employed a novel Accelerated Neutral Atom Beam technique (ANAB) to enhance the bioactivity of PEEK. ANAB employs an intense beam of cluster-like packets of accelerated unbonded neutral argon (Ar) gas atoms. These beams are created by first producing a highly energetic Gas Cluster Ion Beam (GCIB) comprised of van der Waals bonded Ar atoms, then transferring energy to the clusters so as to cause release of most of the interatomic bonds, and finally deflecting away the remaining electrically charged cluster cores of still bonded atoms. We identified that ANAB treatment of PEEK results in nanometer scale surface modifications as well as increased surface hydrophilicity. Human osteoblasts seeded onto the surface of ANAB-treated PEEK exhibited enhanced growth as compared to control PEEK as evidenced by cell proliferation assays and microscopy. This increase in bioactivity resulted in cell proliferation levels comparable to native titanium. An in vivo study using a rat calvarial critical size defect model revealed enhanced osseointegration where bone tissue formation was evident only on the ANAB treated PEEK. Taken together, these data suggest that ANAB treatment of PEEK has the potential to enhance its bioactivity, resulting in bone formation and significantly decreasing osseointegration time of orthopedic and spinal implants

Laser sputtering. Pt. 1

International Nuclear Information System (INIS)

Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

1985-01-01

Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

Temperature dependence of the optical properties of ion-beam sputtered ZrN films

Energy Technology Data Exchange (ETDEWEB)

Larijani, M.M. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); Kiani, M. [Azad University, South Tehran Branch, Department of Physics, Tehran (Iran, Islamic Republic of); Jafari-Khamse, E. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); University of Kashan, Department of Physics, Kashan (Iran, Islamic Republic of); Fathollahi, V. [Nuclear Science Research School, NSTRI, Tehran (Iran, Islamic Republic of)

2014-11-15

The reflectivity of sputtered Zirconium nitride films on glass substrate has been investigated in the spectral energy range of 0.8-6.1 eV as a function of deposition temperature varying between 373 and 723 K. Optical constants of the prepared films have been determined using the Drude analysis. Experimental results showed strong dependency of optical properties of the films, such as optical resistivity on the substrate temperature. The temperature increase of the substrate has shown an increase in both the plasmon frequency and electron scattering time. The electrical behavior of the films showed a good agreement between their optical and electrical resistivity. (orig.)

Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

Science.gov (United States)

Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

2015-04-01

Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

Nanosecond and femtosecond mass spectroscopic analysis of a molecular beam produced by the spray-jet technique

International Nuclear Information System (INIS)

Yamada, Toshiki; Shinohara, Hidenori; Kamikado, Toshiya; Okuno, Yoshishige; Suzuki, Hitoshi; Mashiko, Shinro; Yokoyama, Shiyoshi

2008-01-01

The spray-jet molecular beam apparatus enabled us to produce a molecular beam of non-volatile molecules under high vacuum from a sprayed mist of sample solutions. The apparatus has been used in spectroscopic studies and as a means of molecular beam deposition. We analyzed the molecular beam, consisting of non-volatile, solvent, and carrier-gas molecules, by using femtosecond- and nanosecond- laser mass spectroscopy. The information thus obtained provided insight into the molecular beam produced by the spray-jet technique

Sputtering and inelastic processes

International Nuclear Information System (INIS)

Baranov, I.A.; Tsepelevic, S.O.

1987-01-01

Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

Site control technique for quantum dots using electron beam induced deposition

Energy Technology Data Exchange (ETDEWEB)

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

2014-05-15

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

Site control technique for quantum dots using electron beam induced deposition

International Nuclear Information System (INIS)

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

2014-01-01

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Chemical and microstructural characterization of rf-sputtered BaTiO{sub 3} nano-capacitors with Ni electrodes

Energy Technology Data Exchange (ETDEWEB)

Reck, James N., E-mail: j.n.reck@gmail.com [Missouri University of Science and Technology, Department of Materials Science and Engineering, Rolla, MO 65409 (United States); Cortez, Rebecca [Union College, Department of Mechanical Engineering, Schenectady, NY 12308 (United States); Xie, S. [Northwestern University, Department of Materials Science and Engineering, Evanston, IL 60208 (United States); Zhang Ming; O' Keefe, Matthew; Dogan, Fatih [Missouri University of Science and Technology, Department of Materials Science and Engineering, Rolla, MO 65409 (United States)

2012-05-15

Chemical and microstructural evaluation techniques have been used to characterize sputter deposited 100-150 nm thick BaTiO{sub 3} nano-capacitors with 30 nm thick Ni electrodes fabricated on Si/SiO{sub 2} wafers. More than 99% of devices had resistance > 20 M{Omega}. Electrodes were found to have a roughness, R{sub a}, of about 0.66 {+-} 0.04 nm, and the BaTiO{sub 3} had a R{sub a} value of 1.3 {+-} 0.12 nm. Characterization of the BaTiO{sub 3} film chemistry with X-ray Photoelectron Spectroscopy (XPS) showed the films had excess oxygen and Ba:Ti ratios ranging from 0.78 to 1.1, depending on sputtering conditions. X-ray diffraction showed a broad peak between approximately 20 Degree-Sign and 35 Degree-Sign 2{theta}, indicating the films were either amorphous or contained grain sizes less than 5 nm. Focused ion beam images confirmed the presence of smooth, conformal films, with no visible signs of macro-defects such as pin-holes, cracks, or pores. High resolution transmission electron microscopy (TEM) and electron diffraction patterns confirmed the presence of a nearly amorphous film with limited short range order. No correlation was found between the chemical and microstructural studies with the dielectric permittivity (280-1000), loss (0.02-0.09), and/or resistivity (8.7 Multiplication-Sign 10{sup 10}-1.5 Multiplication-Sign 10{sup 12} {Omega} cm) values.

An x-ray technique for precision laser beam synchronization

International Nuclear Information System (INIS)

Landen, O.L.; Lerche, R.A.; Hay, R.G.; Hammel, B.A.; Kalantar, D.; Cable, M.D.

1994-01-01

A new x-ray technique for recording the relative arrival times of multiple laser beams at a common target with better than ± 10 ps accuracy has been implemented at the Nova laser facility. 100 ps, 3ω Nova beam are focused to separate locations on a gold ribbon target viewed from the side. The measurement consists of using well characterized re-entrant x-ray streak cameras for 1-dimensional streaked imaging of the > 3 keV x-rays emanating from these isolated laser plasmas. After making the necessary correction for the differential laser, x-ray and electron transit times involved, timing offsets as low as ± 7 ps are resolved, and on subsequent shots, corrected for, verified and independently checked. This level of synchronization proved critical in meeting the power balance requirements for indirectly-driven pulse-shaped Nova implosions

Large Area Sputter Coating on Glass

Science.gov (United States)

Katayama, Yoshihito

Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

Obsidian hydration profiles measured by sputter-induced optical emission.

Science.gov (United States)

Tsong, I S; Houser, C A; Yusef, N A; Messier, R F; White, W B; Michels, J W

1978-07-28

The variation of concentrations of hydrogen, sodium, potassium, lithium, calcium, magnesium, silicon, and aluminum as a function of depth in the hydration layer of obsidian artifacts has been determined by sputter-induced optical emission. The surface hydration is accompanied by dealkalization, and there is a buildup of alkaline earths, calcium and magnesium in the outermost layers. These results have clarified the phenomena underlying the obsidian hydration dating technique.

Computer simulation of the self-sputtering of uranium

International Nuclear Information System (INIS)

Robinson, M.T.

1983-01-01

The sputtering of polycrystalline α-uranium by uranium ions of energies below 10 keV has been studied in the binary collision approximation using the computer simulation program marlowe. Satisfactory agreement of the computed sputtering yields with the small amount of available experimental data was achieved using the Moliere interatomic potential, a semilocal inelastic loss function, and a planar surface binding barrier, all with conventional parameters. The model is used to discuss low energy sputtering processes and the energy and angular distributions of the reflected primaries and the sputtered target particles

The edge transient-current technique (E-TCT) with high energy hadron beam

Energy Technology Data Exchange (ETDEWEB)

Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor [J. Stefan Institute, Ljubljana (Slovenia); Mikuž, Marko [J. Stefan Institute, Ljubljana (Slovenia); University of Ljubljana (Slovenia); Muškinja, Miha; Zavrtanik, Marko [J. Stefan Institute, Ljubljana (Slovenia)

2016-09-21

We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

Stabilization of sputtered gold and silver nanoparticles in PEG colloid solutions

International Nuclear Information System (INIS)

Slepička, P.; Elashnikov, R.; Ulbrich, P.; Staszek, M.; Kolská, Z.; Švorčík, V.

2015-01-01

In this study, a simple technique for preparation of colloid solution of metal nanoparticles in polyethylene glycol (PEG)/H 2 O is described. By this technique, stable colloidal metal solutions can be prepared ready for use without application of chemical reactions, stabilizers, or reducing agents. The nanoparticles are created by direct sputtering of metal into PEG. The influence of sputter conditions and the concentration of PEG/H 2 O on the properties of nanoparticles was studied. The nanoparticles were characterized by transmission electron microscopy, atomic absorption spectrometry, dynamic light scattering, and UV–Vis spectroscopy. UV–Vis spectra of gold nanoparticle solution exhibit localized surface plasmon resonance characteristic peaks located in the region 513–560 nm (PEG/H 2 O—1/1), 509–535 nm (PEG/H 2 O—1/9), and for silver nanoparticles in the region from 401 to 421 nm. Silver nanoparticles have a broader size distribution compared with gold ones. An appropriate choice of concentration, mixing, and deposition conditions allows preparing the stable solution of gold or silver nanoparticles

Stabilization of sputtered gold and silver nanoparticles in PEG colloid solutions

Energy Technology Data Exchange (ETDEWEB)

Slepička, P., E-mail: petr.slepicka@vscht.cz; Elashnikov, R. [University of Chemistry and Technology Prague, Department of Solid State Engineering (Czech Republic); Ulbrich, P. [University of Chemistry and Technology Prague, Department of Biochemistry and Microbiology (Czech Republic); Staszek, M. [University of Chemistry and Technology Prague, Department of Solid State Engineering (Czech Republic); Kolská, Z. [University of J. E. Purkyně, Faculty of Science (Czech Republic); Švorčík, V. [University of Chemistry and Technology Prague, Department of Solid State Engineering (Czech Republic)

2015-01-15

In this study, a simple technique for preparation of colloid solution of metal nanoparticles in polyethylene glycol (PEG)/H{sub 2}O is described. By this technique, stable colloidal metal solutions can be prepared ready for use without application of chemical reactions, stabilizers, or reducing agents. The nanoparticles are created by direct sputtering of metal into PEG. The influence of sputter conditions and the concentration of PEG/H{sub 2}O on the properties of nanoparticles was studied. The nanoparticles were characterized by transmission electron microscopy, atomic absorption spectrometry, dynamic light scattering, and UV–Vis spectroscopy. UV–Vis spectra of gold nanoparticle solution exhibit localized surface plasmon resonance characteristic peaks located in the region 513–560 nm (PEG/H{sub 2}O—1/1), 509–535 nm (PEG/H{sub 2}O—1/9), and for silver nanoparticles in the region from 401 to 421 nm. Silver nanoparticles have a broader size distribution compared with gold ones. An appropriate choice of concentration, mixing, and deposition conditions allows preparing the stable solution of gold or silver nanoparticles.

A technique for measuring an electron beam close-quote s longitudinal phase space with sub-picosecond resolution

International Nuclear Information System (INIS)

Crosson, E.R.; Berryman, K.W.; Richman, B.A.; Smith, T.I.; Swent, R.L.

1996-01-01

We have developed a technique for measuring the longitudinal phase space distribution of the Stanford Superconducting Accelerator close-quote s (SCA) electron beam which involves applying tomographic techniques to energy spectra taken as a function of the relative phase between the beam and the accelerating field, and optionally, as a function of the strength of a variable dispersion section in the system. The temporal profile of the beam obtained by projecting the inferred distribution onto the time axis is compared with that obtained from interferometric transition radiation measurements. copyright 1996 American Institute of Physics

Sputtering ultra-small Pt on nanographitic flakes deposited by electrophoresis for ethanol electro oxidation

Science.gov (United States)

Daryakenari, Ahmad Ahmadi; Daryakenari, Mohammad Ahmadi; Omidvar, Hamid

2018-01-01

To acquire highly efficient and cost-effective fuel cells, numerous research works have been carried out to the development low cost and excellent performance of electrocatalysts. In this paper, a solution-based electrophoretic deposition (EPD) technique for fabrication of Pt-based catalyst layers is studied. Nanographitic flake coatings used as catalyst support for sputtered platinium (Pt) were fabricated via the electrophoretic deposition (EPD) of dispersed nanographitic flakes in isopropyl alcohol. Magnesium nitrate hexahydrate (MNH) was used as an additive binder in the EPD process. Subsequently, the platinium particles were deposited by a direct sputtering on the fabricated nanographitic flake coatings.

A Multi-Sample Cs-Sputter Negative Ion Source

International Nuclear Information System (INIS)

Alton, G.D.; Ball, J.A.; Bao, Y.; Cui, B.; Reed, C.A.; Williams, C.

1998-01-01

A multi-sample Cs sputter negative-ion source, equipped with a conical-geometry, W-surface-ionizer has been designed and fabricated that permits sample changes without disruption of on-line accelerator operation. Sample changing is effected by actuating an electro-pneumatic control system located at ground potential that drives an air-motor-driven sample-indexing-system mounted at high voltage; this arrangement avoids complications associated with indexing mechanisms that rely on electronic power-supplies located at high potential. In-beam targets are identified by LED indicator lights derived from a fiber-optic, Gray-code target-position sensor. Aspects of the overall source design and details of the indexing mechanism along with operational parameters, ion optics. intensities, and typical emittances for a variety of negative-ion species will be presented in this report

A Multi-Sample Cs-Sputter Negative Ion Source

Energy Technology Data Exchange (ETDEWEB)

Alton, G.D.; Ball, J.A.; Bao, Y.; Cui, B.; Reed, C.A.; Williams, C.

1998-10-05

A multi-sample Cs sputter negative-ion source, equipped with a conical-geometry, W-surface-ionizer has been designed and fabricated that permits sample changes without disruption of on-line accelerator operation. Sample changing is effected by actuating an electro-pneumatic control system located at ground potential that drives an air-motor-driven sample-indexing-system mounted at high voltage; this arrangement avoids complications associated with indexing mechanisms that rely on electronic power-supplies located at high potential. In-beam targets are identified by LED indicator lights derived from a fiber-optic, Gray-code target-position sensor. Aspects of the overall source design and details of the indexing mechanism along with operational parameters, ion optics. intensities, and typical emittances for a variety of negative-ion species will be presented in this report.

Optical fiber sensors fabricated by the focused ion beam technique

DEFF Research Database (Denmark)

Yuan, Scott Wu; Wang, Fei; Bang, Ole

2012-01-01

crystal fiber (PCF). Using this technique we fabricate a highly compact fiber-optic Fabry-Pérot (FP) refractive index sensor near the tip of fiber taper, and a highly sensitive in-line temperature sensor in PCF. We also demonstrate the potential of using FIB to selectively fill functional fluid......Focused ion beam (FIB) is a highly versatile technique which helps to enable next generation of lab-on-fiber sensor technologies. In this paper, we demonstrate the use application of FIB to precisely mill the fiber taper and end facet of both conventional single mode fiber (SMF) and photonic...

Ion bombardment modification of surfaces

International Nuclear Information System (INIS)

Auciello, O.

1984-01-01

An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

International Nuclear Information System (INIS)

Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

2008-01-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

Matted-fiber divertor tagets for sputter resistance

International Nuclear Information System (INIS)

Gierszewski, P.J.; Todreas, N.E.; Mikic, B.; Yang, T.F.

1981-06-01

Reductions in net sputtering yields can be obtained by altering the surface topography to maximize redeposition of sputtered atoms. A simple analysis is used to indicate a potential reduction by a factor of 2 to 5 for matted fiber divertor targets, relatively independent of incident, reflected and sputtered atom distributions. The fiber temperature is also shown to be acceptable, even up to 10 MW/m 2 , for reasonably combinations of materials, fiber diameter and fiber spacing

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces

DEFF Research Database (Denmark)

Hartmann, Hannes; Popok, Vladimir; Barke, Ingo

2012-01-01

The design and performance of an experimental setup utilizing a magnetron sputtering source for production of beams of ionized size-selected clusters for deposition in ultra-high vacuum is described. For the case of copper cluster formation the influence of different source parameters is studied...

Production and Test of 352 MHZ Niobum-Sputtered Reduced-$\\beta$ Cavities

CERN Document Server

Benvenuti, Cristoforo; Calatroni, Sergio; Chiaveri, Enrico; Tückmantel, Joachim

1997-01-01

Three types of 352 MHz single-cell cavities foreseen for different particle speeds (v/c=0.8, 0.625 and 0.48) have been designed and built with the niobium sputtered on copper technique. We report on the results of the cold tests at 4.5 and 2.5 K and the actual status of the data analysis.

Irradiation effects of Ar cluster ion beams on Si substrates

International Nuclear Information System (INIS)

Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

1993-01-01

Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

Sputtering of a silicon surface: Preferential sputtering of surface impurities

Czech Academy of Sciences Publication Activity Database

Nietiadi, M.L.; Rosandi, Y.; Lorinčík, Jan; Urbassek, H.M.

-, č. 303 (2013), s. 205-208 ISSN 0168-583X Institutional support: RVO:67985882 Keywords : Sputtering * Molecular dynamics * SIMS Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.186, year: 2013

Impurity Dynamics under Neutral Beam Injection at TJ-II (simulation)

International Nuclear Information System (INIS)

Guasp, J.; Fuentes, C.; Liniers, M.

2001-01-01

In this study the simulations of plasma transport under NBI for TJ-II, previously performed, are extended. Since than a considerable number of important modifications have been introduced in the model: change of magnetic configuration, use of experimental initial profiles, expansion of the Data base from NBI calculations and, mainly, a detailed handling of impurities with inclusion of sputtering effects. Moreover there is now a particular emphasis on the analysis of the conditions for discharge collapse and on the possible effects of single beam injection. This analysis of impurity behaviour with sputtering shows that in the expected usual cases there is no radioactive collapse and that if the recycling coefficients remain lower the unity it is always possible to find a strategy for external gas puffing leading to a stationary state, with densities below the limit and efficient NBI absorption (>50%). The radioactive collapse can appear either at high densities (central value higher than 1.4x10''20 m''3), excessive influx of impurities (i. e. with sputtering rates higher than twice the expected values) o for insufficient injected beam power (less than 45 kW). The present study analyses only the 100 4 4 6 4 configuration of TJ-II, but future works will start a systematic scan of configuration using this same model. (Author) 12 Refs